[go: up one dir, main page]

TW226043B - - Google Patents

Info

Publication number
TW226043B
TW226043B TW081102362A TW81102362A TW226043B TW 226043 B TW226043 B TW 226043B TW 081102362 A TW081102362 A TW 081102362A TW 81102362 A TW81102362 A TW 81102362A TW 226043 B TW226043 B TW 226043B
Authority
TW
Taiwan
Application number
TW081102362A
Original Assignee
Semiconductor Energy Res Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Res Co Ltd filed Critical Semiconductor Energy Res Co Ltd
Application granted granted Critical
Publication of TW226043B publication Critical patent/TW226043B/zh

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2011—Display of intermediate tones by amplitude modulation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0823—Several active elements per pixel in active matrix panels used to establish symmetry in driving, e.g. with polarity inversion
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/027—Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/06—Details of flat display driving waveforms
    • G09G2310/066—Waveforms comprising a gently increasing or decreasing portion, e.g. ramp
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
TW081102362A 1991-03-26 1992-03-27 TW226043B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8778091A JP2794499B2 (ja) 1991-03-26 1991-03-26 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
TW226043B true TW226043B (zh) 1994-07-01

Family

ID=13924498

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081102362A TW226043B (zh) 1991-03-26 1992-03-27

Country Status (5)

Country Link
US (8) US5287205A (zh)
EP (1) EP0506027A3 (zh)
JP (3) JP2794499B2 (zh)
KR (2) KR960008103B1 (zh)
TW (1) TW226043B (zh)

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437863B2 (ja) 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
EP0499979A3 (en) * 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2651972B2 (ja) 1992-03-04 1997-09-10 株式会社半導体エネルギー研究所 液晶電気光学装置
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP3753440B2 (ja) * 1992-05-07 2006-03-08 セイコーエプソン株式会社 液晶表示装置及び液晶表示装置の駆動方法
JP3634390B2 (ja) * 1992-07-16 2005-03-30 セイコーエプソン株式会社 液晶電気光学素子
CN1560691B (zh) 1992-08-27 2010-05-26 株式会社半导体能源研究所 半导体器件及其制造方法和有源矩阵显示器
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
JPH06275640A (ja) * 1993-03-22 1994-09-30 Semiconductor Energy Lab Co Ltd 薄膜トランジスタおよびその作製方法
US5747355A (en) * 1993-03-30 1998-05-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing a transistor using anodic oxidation
JP3471851B2 (ja) 1993-05-06 2003-12-02 株式会社半導体エネルギー研究所 液晶表示装置
TW297142B (zh) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
US6777763B1 (en) * 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP3030368B2 (ja) * 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JPH07302912A (ja) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
US5815134A (en) * 1994-05-16 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optical device and driving method thereof
US6906383B1 (en) * 1994-07-14 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacture thereof
US6773971B1 (en) 1994-07-14 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions
US5808800A (en) * 1994-12-22 1998-09-15 Displaytech, Inc. Optics arrangements including light source arrangements for an active matrix liquid crystal image generator
JP2900229B2 (ja) 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
JP3675886B2 (ja) * 1995-03-17 2005-07-27 株式会社半導体エネルギー研究所 薄膜半導体デバイスの作製方法
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
JP3306258B2 (ja) * 1995-03-27 2002-07-24 三洋電機株式会社 半導体装置の製造方法
CN1156815C (zh) 1995-05-17 2004-07-07 精工爱普生株式会社 液晶显示装置及其驱动方法以及其使用的驱动电路和电源电路装置
JPH09105953A (ja) 1995-10-12 1997-04-22 Semiconductor Energy Lab Co Ltd 液晶表示装置
US6900855B1 (en) * 1995-10-12 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Display device having resin black matrix over counter substrate
JPH09146108A (ja) 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
TWI228625B (en) 1995-11-17 2005-03-01 Semiconductor Energy Lab Display device
US5940732A (en) * 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
TW309633B (zh) * 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JPH10133216A (ja) * 1996-11-01 1998-05-22 Hitachi Ltd アクティブマトリクス型液晶表示装置
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6697129B1 (en) * 1996-02-14 2004-02-24 Semiconductor Energy Laboratory Co., Ltd. Guest-host mode liquid crystal display device of lateral electric field driving type
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP3527009B2 (ja) 1996-03-21 2004-05-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3788649B2 (ja) * 1996-11-22 2006-06-21 株式会社半導体エネルギー研究所 液晶表示装置
JPH10268360A (ja) * 1997-03-26 1998-10-09 Semiconductor Energy Lab Co Ltd 表示装置
US6927826B2 (en) * 1997-03-26 2005-08-09 Semiconductor Energy Labaratory Co., Ltd. Display device
JP3856901B2 (ja) 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
US6465268B2 (en) 1997-05-22 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
JP4831850B2 (ja) * 1997-07-08 2011-12-07 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JPH1187720A (ja) * 1997-09-08 1999-03-30 Sanyo Electric Co Ltd 半導体装置及び液晶表示装置
JPH11111991A (ja) * 1997-09-30 1999-04-23 Sanyo Electric Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
JPH11111994A (ja) 1997-10-03 1999-04-23 Sanyo Electric Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP3308880B2 (ja) * 1997-11-07 2002-07-29 キヤノン株式会社 液晶表示装置と投写型液晶表示装置
US7202497B2 (en) * 1997-11-27 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4014710B2 (ja) 1997-11-28 2007-11-28 株式会社半導体エネルギー研究所 液晶表示装置
FR2772501B1 (fr) 1997-12-15 2000-01-21 Thomson Lcd Dispositif de commande matriciel
JPH11307782A (ja) 1998-04-24 1999-11-05 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4256544B2 (ja) * 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路
JP2000081848A (ja) * 1998-09-03 2000-03-21 Semiconductor Energy Lab Co Ltd 液晶表示装置を搭載した電子機器
US7821065B2 (en) * 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
US7145536B1 (en) 1999-03-26 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US6475836B1 (en) * 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6952194B1 (en) * 1999-03-31 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2000294122A (ja) * 1999-04-08 2000-10-20 Nec Corp 電界放出型冷陰極及び平面ディスプレイの製造方法
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
TW478169B (en) * 1999-07-16 2002-03-01 Seiko Epson Corp Electro optical device and the projection display device using the same
US6563482B1 (en) 1999-07-21 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Display device
US6967633B1 (en) * 1999-10-08 2005-11-22 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2001147446A (ja) * 1999-11-19 2001-05-29 Hitachi Ltd 液晶表示装置とその製造方法
JP2001175198A (ja) 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6646692B2 (en) * 2000-01-26 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal display device and method of fabricating the same
TW583431B (en) * 2000-02-22 2004-04-11 Toshiba Corp Liquid crystal display device
JP3596471B2 (ja) * 2000-03-27 2004-12-02 セイコーエプソン株式会社 電気光学装置、その製造方法および電子機器
US6580475B2 (en) 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7804552B2 (en) * 2000-05-12 2010-09-28 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with light shielding portion comprising laminated colored layers, electrical equipment having the same, portable telephone having the same
KR100672622B1 (ko) * 2000-07-26 2007-01-23 엘지.필립스 엘시디 주식회사 액정표시장치의 패드 및 그 제조방법
KR101027485B1 (ko) * 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
KR100491141B1 (ko) * 2001-03-02 2005-05-24 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법과 이를 이용한 액티브매트릭스형 표시소자 및 그의 제조방법
JP4002410B2 (ja) * 2001-06-22 2007-10-31 日本電気株式会社 アクティブマトリックス型液晶表示装置の製造方法
JP4159779B2 (ja) * 2001-12-28 2008-10-01 株式会社半導体エネルギー研究所 半導体装置、電子機器
US7749818B2 (en) * 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI272666B (en) * 2002-01-28 2007-02-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7101729B2 (en) * 2002-03-28 2006-09-05 Seiko Epson Corporation Method of manufacturing a semiconductor device having adjoining substrates
US7183582B2 (en) * 2002-05-29 2007-02-27 Seiko Epson Coporation Electro-optical device and method of manufacturing the same, element driving device and method of manufacturing the same, element substrate, and electronic apparatus
JP5005170B2 (ja) * 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7081704B2 (en) 2002-08-09 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW594653B (en) * 2003-06-02 2004-06-21 Toppoly Optoelectronics Corp Low leakage thin film transistor circuit
TWI240135B (en) * 2003-06-05 2005-09-21 Au Optronics Corp Method of stabilizing parasitic capacitance in an LCD device
US20040257352A1 (en) * 2003-06-18 2004-12-23 Nuelight Corporation Method and apparatus for controlling
TWI368774B (en) * 2003-07-14 2012-07-21 Semiconductor Energy Lab Light-emitting device
US20050200292A1 (en) * 2004-02-24 2005-09-15 Naugler W. E.Jr. Emissive display device having sensing for luminance stabilization and user light or touch screen input
US20050200296A1 (en) * 2004-02-24 2005-09-15 Naugler W. E.Jr. Method and device for flat panel emissive display using shielded or partially shielded sensors to detect user screen inputs
US20050200294A1 (en) * 2004-02-24 2005-09-15 Naugler W. E.Jr. Sidelight illuminated flat panel display and touch panel input device
US20050243023A1 (en) * 2004-04-06 2005-11-03 Damoder Reddy Color filter integrated with sensor array for flat panel display
US7129938B2 (en) * 2004-04-12 2006-10-31 Nuelight Corporation Low power circuits for active matrix emissive displays and methods of operating the same
US20050248515A1 (en) * 2004-04-28 2005-11-10 Naugler W E Jr Stabilized active matrix emissive display
US20060007204A1 (en) * 2004-06-29 2006-01-12 Damoder Reddy System and method for a long-life luminance feedback stabilized display panel
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
CN100578590C (zh) 2005-04-18 2010-01-06 株式会社半导体能源研究所 半导体装置、具有该半导体装置的显示装置及电子设备
JP4301227B2 (ja) * 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー
WO2007075369A1 (en) * 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
US7543125B2 (en) * 2005-12-19 2009-06-02 Commvault Systems, Inc. System and method for performing time-flexible calendric storage operations
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
JP5358105B2 (ja) * 2007-03-23 2013-12-04 株式会社半導体エネルギー研究所 表示装置
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
JP5178492B2 (ja) * 2007-12-27 2013-04-10 株式会社半導体エネルギー研究所 表示装置および当該表示装置を具備する電子機器
WO2009090969A1 (en) 2008-01-15 2009-07-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW200941076A (en) * 2008-03-31 2009-10-01 Ind Tech Res Inst Color cholesteric liquid crystal display devices and fabrication methods thereof
WO2010039901A1 (en) * 2008-10-02 2010-04-08 Easycare, Inc. Horse boot connected to glued-on liner
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
KR101298234B1 (ko) 2010-03-19 2013-08-22 엘지디스플레이 주식회사 터치인식 횡전계형 액정표시장치 및 이의 제조 방법
KR101307962B1 (ko) * 2010-03-19 2013-09-12 엘지디스플레이 주식회사 터치인식 횡전계형 액정표시장치 및 이의 제조 방법
WO2013172220A1 (en) 2012-05-18 2013-11-21 Semiconductor Energy Laboratory Co., Ltd. Pixel circuit, display device, and electronic device

Family Cites Families (212)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838209A (en) 1972-06-08 1974-09-24 Matsushita Electric Industrial Co Ltd Scanning apparatus for a matrix display panel
JPS4952598U (zh) 1972-08-10 1974-05-09
US4036553A (en) * 1972-08-29 1977-07-19 Commissariat A L'energie Atomique Method of controlling an optical characteristic
JPS5327483Y2 (zh) 1972-10-11 1978-07-12
JPS4977537U (zh) 1972-10-20 1974-07-04
JPS4977537A (zh) 1972-11-27 1974-07-26
JPS5331698Y2 (zh) 1973-05-19 1978-08-07
US3955187A (en) 1974-04-01 1976-05-04 General Electric Company Proportioning the address and data signals in a r.m.s. responsive display device matrix to obtain zero cross-talk and maximum contrast
JPS5832466Y2 (ja) 1974-09-28 1983-07-19 松下電器産業株式会社 ポ−タブルデンチキキノ ジユウデンソウチ
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
JPS5276897U (zh) 1975-12-04 1977-06-08
JPS5827365Y2 (ja) 1976-03-19 1983-06-14 松下電器産業株式会社 ピックアップア−ム装置
JPS5532026Y2 (zh) 1976-04-05 1980-07-31
US4103297A (en) * 1976-12-20 1978-07-25 Hughes Aircraft Company Light-insensitive matrix addressed liquid crystal display system
JPS53144297U (zh) 1977-04-19 1978-11-14
JPS53144297A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Display device
US4455737A (en) * 1978-05-26 1984-06-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
JPS5842448B2 (ja) * 1978-08-25 1983-09-20 セイコーエプソン株式会社 液晶表示パネル
JPS6214472Y2 (zh) 1979-03-27 1987-04-13
US4239346A (en) * 1979-05-23 1980-12-16 Hughes Aircraft Company Compact liquid crystal display system
JPS5824927Y2 (ja) 1979-11-29 1983-05-28 日本鉱業株式会社 析出金属剥離装置
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film
FR2493012B1 (fr) * 1980-10-27 1987-04-17 Commissariat Energie Atomique Procede de commande d'une caracteristique optique d'un materiau
JPH02210330A (ja) * 1981-01-09 1990-08-21 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
EP0058548B1 (en) * 1981-02-16 1986-08-06 Fujitsu Limited Method of producing mosfet type semiconductor device
JPS6038627Y2 (ja) 1981-07-28 1985-11-18 株式会社神戸製鋼所 クレ−ンブ−ムにおける継足ジブ取付装置
JPS5823479A (ja) * 1981-08-05 1983-02-12 Fujitsu Ltd 半導体装置の製造方法
JPS5827365A (ja) * 1981-08-10 1983-02-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPS5832466A (ja) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd Ｍｏｓｆｅｔの製造方法
US4470829A (en) 1981-08-31 1984-09-11 Nippon Steel Corporation Solid adsorbent for carbon monoxide and process for separation from gas mixture
US4427978A (en) 1981-08-31 1984-01-24 Marshall Williams Multiplexed liquid crystal display having a gray scale image
US4435047A (en) * 1981-09-16 1984-03-06 Manchester R & D Partnership Encapsulated liquid crystal and method
JPS5921728B2 (ja) * 1981-11-05 1984-05-22 山口金属株式会社 鋸の製造方法
JPS5881972U (ja) 1981-11-28 1983-06-03 日立電線加工株式会社 積層母線
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS58124273A (ja) * 1982-01-20 1983-07-23 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜トランジスタ
JPS58115864U (ja) 1982-01-27 1983-08-08 三菱電機株式会社 車両用充電発電機
JPH0656887B2 (ja) * 1982-02-03 1994-07-27 株式会社日立製作所 半導体装置およびその製法
JPS58124273U (ja) 1982-02-15 1983-08-24 高田　正明 模型用塗装具
JPS58144888A (ja) * 1982-02-23 1983-08-29 セイコーインスツルメンツ株式会社 行列形液晶表示装置
JPS58158967A (ja) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜トランジスタ
US4557036A (en) * 1982-03-31 1985-12-10 Nippon Telegraph & Telephone Public Corp. Semiconductor device and process for manufacturing the same
US4599535A (en) * 1982-04-02 1986-07-08 Raytheon Company Display tube output assembly and method of manufacture
JPS58158967U (ja) 1982-04-16 1983-10-22 三菱電機株式会社 プレ−トフイン式熱交換器
JPS5951448A (ja) 1982-05-18 1984-03-24 Hitachi Ltd イオン打込用回転円板の冷却機構
US4704002A (en) 1982-06-15 1987-11-03 Matsushita Electric Industrial Co., Ltd. Dot matrix display panel with a thin film transistor and method of manufacturing same
US4559535A (en) * 1982-07-12 1985-12-17 Sigmatron Nova, Inc. System for displaying information with multiple shades of a color on a thin-film EL matrix display panel
US4591892A (en) * 1982-08-24 1986-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
JPS59115574A (ja) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
DE3331601C2 (de) * 1982-09-02 1987-04-30 Canon K.K., Tokio/Tokyo Halbleiterbauelement
JPS5961818A (ja) 1982-10-01 1984-04-09 Seiko Epson Corp 液晶表示装置
JPS5961818U (ja) 1982-10-20 1984-04-23 和田　活民 液体濾過器
JPS59107213A (ja) 1982-12-10 1984-06-21 Mitsubishi Electric Corp 液面検出装置
US4862237A (en) * 1983-01-10 1989-08-29 Seiko Epson Corporation Solid state image sensor
JPS59137931A (ja) 1983-01-28 1984-08-08 Fuji Photo Film Co Ltd カラ−光プリンタヘツド
JPS59214262A (ja) * 1983-05-20 1984-12-04 Hitachi Ltd 絶縁ゲ−ト電界効果トランジスタおよびその製造方法
JPS59221183A (ja) 1983-05-31 1984-12-12 Seiko Epson Corp 液晶表示式受像装置の駆動方式
JPS59194783U (ja) 1983-06-10 1984-12-25 ソニー株式会社 液晶カラ−デイスプレイ装置
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
US4860069A (en) * 1983-09-24 1989-08-22 Semiconductor Energy Laboratory Co., Ltd. Non-single-cry stal semiconductor light emitting device
JPS6067036U (ja) 1983-10-12 1985-05-13 相沢　松雄 双用草刈装置
JPS60158780A (ja) 1984-01-27 1985-08-20 Sony Corp 表示装置
JPS60183726A (ja) 1984-03-02 1985-09-19 Toshiba Corp 半導体装置の電極パタ−ンの形成方法
JPS60154996U (ja) 1984-03-24 1985-10-16 三洋電機株式会社 駆動装置
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
FR2571526B1 (fr) 1984-08-22 1991-02-08 Canon Kk Panneau d'affichage et son procede de commande
JPH037911Y2 (zh) 1984-08-31 1991-02-27
JPH0693166B2 (ja) * 1984-09-05 1994-11-16 株式会社日立製作所 液晶素子
JPS61141174A (ja) * 1984-12-13 1986-06-28 Seiko Epson Corp 固体撮像装置
JPS61136263U (zh) 1985-02-14 1986-08-25
JPS61141174U (zh) 1985-02-25 1986-09-01
JPH0334434Y2 (zh) 1985-03-29 1991-07-22
FR2580110B1 (zh) 1985-04-04 1987-05-29 Commissariat Energie Atomique
JPH0797565B2 (ja) * 1985-07-12 1995-10-18 ソニー株式会社 半導体装置の製造方法
EP0211634B1 (en) * 1985-08-02 1994-03-23 Sel Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for manufacturing semiconductor devices
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
JPS62124769A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Ind Co Ltd 密着型イメ−ジセンサ
JPS62126677A (ja) * 1985-11-27 1987-06-08 Sharp Corp 薄膜トランジスタアレイ
US4770502A (en) 1986-01-10 1988-09-13 Hitachi, Ltd. Ferroelectric liquid crystal matrix driving apparatus and method
JPH0239092Y2 (zh) 1986-01-31 1990-10-19
KR910001848B1 (ko) 1986-02-06 1991-03-28 세이꼬 엡슨 가부시끼가이샤 화상 표시 장치
FR2594579B1 (fr) * 1986-02-17 1988-04-15 Commissariat Energie Atomique Ecran d'affichage a matrice active permettant l'affichage de niveaux de gris
ES2064306T3 (es) * 1986-02-21 1995-02-01 Canon Kk Aparato visualizador.
GB2187859A (en) 1986-03-14 1987-09-16 Gen Electric Plc Liquid crystal devices
JPH0777264B2 (ja) * 1986-04-02 1995-08-16 三菱電機株式会社 薄膜トランジスタの製造方法
US4857907A (en) 1986-04-30 1989-08-15 501 Sharp Kabushiki Kaisha Liquid-crystal display device
JPS62283664A (ja) 1986-06-02 1987-12-09 Hitachi Ltd 薄膜半導体装置の製造方法
US4917471A (en) 1986-08-30 1990-04-17 Canon Kabushiki Kaisha Liquid crystal device
KR900004989B1 (en) 1986-09-11 1990-07-16 Fujitsu Ltd Active matrix type display and driving method
JPH07112259B2 (ja) * 1986-09-26 1995-11-29 ソニー株式会社 デイスプレイ装置
DE3686721D1 (de) 1986-10-08 1992-10-15 Ibm Verfahren zur herstellung einer kontaktoeffnung mit gewuenschter schraege in einer zusammengesetzten schicht, die mit photoresist maskiert ist.
JPS6396636A (ja) * 1986-10-13 1988-04-27 Seiko Epson Corp アクテイブマトリクスパネル
JPS63100777A (ja) * 1986-10-16 1988-05-02 Fujitsu Ltd 透明電極のパタ−ン形成法
US5146355A (en) 1986-10-23 1992-09-08 Litton Systems Canada Limited Transflective mode liquid crystal display with phosphor illumination
JPS6382177U (zh) 1986-11-18 1988-05-30
JPS63136673A (ja) * 1986-11-28 1988-06-08 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPS6396636U (zh) 1986-12-12 1988-06-22
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
US4742346A (en) 1986-12-19 1988-05-03 Rca Corporation System for applying grey scale codes to the pixels of a display device
JPS63100777U (zh) 1986-12-22 1988-06-30
JP2739315B2 (ja) 1987-01-23 1998-04-15 キヤノン株式会社 カラーフィルターおよびカラー液晶素子
GB2202085B (en) * 1987-01-27 1990-02-14 Ricoh Kk Amorphous silicon photosensor
JPS63200572A (ja) * 1987-02-17 1988-08-18 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
JPH041178Y2 (zh) 1987-02-27 1992-01-16
JPS63270167A (ja) 1987-04-30 1988-11-08 Fuji Photo Film Co Ltd 画像形成方法
JP2521752B2 (ja) 1987-05-11 1996-08-07 沖電気工業株式会社 液晶表示装置
EP0291252A3 (en) * 1987-05-12 1989-08-02 Seiko Epson Corporation Method of video display and video display device therefor
JPS63182627U (zh) 1987-05-15 1988-11-24
EP0292284B1 (en) 1987-05-21 1994-01-05 Sony Corporation Method and apparatus for processing display colour signal
US4873516A (en) 1987-06-01 1989-10-10 General Electric Company Method and system for eliminating cross-talk in thin film transistor matrix addressed liquid crystal displays
JPH0750389B2 (ja) * 1987-06-04 1995-05-31 セイコーエプソン株式会社 液晶パネルの駆動回路
US5157386A (en) * 1987-06-04 1992-10-20 Seiko Epson Corporation Circuit for driving a liquid crystal display panel
JPS63200572U (zh) 1987-06-12 1988-12-23
US4891330A (en) * 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
JPH07114184B2 (ja) * 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
JPS6437585A (en) * 1987-08-04 1989-02-08 Nippon Telegraph & Telephone Active matrix type display device
JPS6430272U (zh) 1987-08-18 1989-02-23
JPS6450028A (en) * 1987-08-21 1989-02-27 Nec Corp Thin film transistor substrate
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
JP2594971B2 (ja) 1987-09-09 1997-03-26 カシオ計算機株式会社 薄膜トランジスタパネル
US5032883A (en) 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
JPS6468724A (en) * 1987-09-09 1989-03-14 Seiko Epson Corp Active matrix panel
US5166085A (en) 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5229644A (en) 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
JP2598420B2 (ja) 1987-09-09 1997-04-09 カシオ計算機株式会社 薄膜トランジスタ及びその製造方法
JPS6468732A (en) 1987-09-10 1989-03-14 Canon Kk Driving method for optical modulating element
JP2592463B2 (ja) * 1987-09-17 1997-03-19 カシオ計算機株式会社 薄膜トランジスタパネル
US5264839A (en) * 1987-09-25 1993-11-23 Canon Kabushiki Kaisha Display apparatus
JP2852042B2 (ja) 1987-10-05 1999-01-27 株式会社日立製作所 表示装置
JPH01107237A (ja) 1987-10-21 1989-04-25 Hitachi Ltd 液晶表示装置
JPH0176036U (zh) 1987-11-11 1989-05-23
JPH01130131A (ja) * 1987-11-16 1989-05-23 Seiko Epson Corp ドライバー内蔵アクティブマトリクスパネル
US4934791A (en) 1987-12-09 1990-06-19 Matsushita Electric Industrial Co., Ltd. Color filter
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
JPH01156725A (ja) * 1987-12-15 1989-06-20 Seiko Epson Corp 表示装置
JPH01161316A (ja) 1987-12-18 1989-06-26 Sharp Corp 液晶表示装置の検査方法
JPH01165172A (ja) * 1987-12-22 1989-06-29 Ricoh Co Ltd 薄膜トランジスターの製造方法
JPH01175260A (ja) * 1987-12-29 1989-07-11 Nec Corp 絶縁ゲート電界効果トランジスタの製造方法
US4949141A (en) * 1988-02-04 1990-08-14 Amoco Corporation Vertical gate thin film transistors in liquid crystal array
US4960719A (en) 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
JPH01201622A (ja) 1988-02-06 1989-08-14 Sharp Corp 投映型表示装置
JPH01222226A (ja) 1988-03-01 1989-09-05 Matsushita Electron Corp 画像表示装置
JPH01259320A (ja) 1988-04-11 1989-10-17 Toppan Printing Co Ltd 表示装置用電極板又は電極板ブランクの製造方法
JPH01156725U (zh) 1988-04-15 1989-10-27
US5365357A (en) 1988-04-21 1994-11-15 Asahi Glass Company Ltd. Color liquid crystal display having color filters and light blocking layers in the periphery
JPH0285826U (zh) 1988-04-30 1990-07-06
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JPH01291467A (ja) * 1988-05-19 1989-11-24 Toshiba Corp 薄膜トランジスタ
JPH01321073A (ja) * 1988-06-22 1989-12-27 Hitachi Ltd ワーク判別機能付はんだ付け装置
FR2633764B1 (fr) 1988-06-29 1991-02-15 Commissariat Energie Atomique Procede et dispositif de commande d'un ecran matriciel affichant des niveaux de gris
JP2752991B2 (ja) * 1988-07-14 1998-05-18 株式会社東芝 半導体装置
JPH0251129A (ja) * 1988-08-12 1990-02-21 Sanyo Electric Co Ltd アクテイブマトリクス液晶表示パネル
US5196839A (en) 1988-09-16 1993-03-23 Chips And Technologies, Inc. Gray scales method and circuitry for flat panel graphics display
JPH0285826A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd 表示パネル
JPH02103925A (ja) * 1988-10-13 1990-04-17 Seiko Epson Corp 半導体装置の製造方法
JPH02109341A (ja) * 1988-10-19 1990-04-23 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
US5016610A (en) 1988-10-21 1991-05-21 Toshiba Ceramics Co., Ltd. Radiant tube type heater
CA1313563C (en) * 1988-10-26 1993-02-09 Makoto Sasaki Thin film transistor panel
JPH02157827A (ja) 1988-12-12 1990-06-18 Nec Corp 薄膜トランジスタアレイ装置
DE68921567T2 (de) 1988-11-30 1995-07-06 Nippon Electric Co Flüssigkristallanzeigetafel mit verminderten Pixeldefekten.
EP0376329B1 (en) * 1988-12-28 1995-03-08 Sony Corporation Liquid crystal display device
JP2741769B2 (ja) * 1989-01-18 1998-04-22 株式会社日立製作所 液晶表示装置
US5051570A (en) * 1989-01-20 1991-09-24 Nec Corporation Liquid crystal light valve showing an improved display contrast
JP2804059B2 (ja) 1989-01-30 1998-09-24 株式会社日立製作所 液晶表示装置
JP2826744B2 (ja) 1989-03-02 1998-11-18 キヤノン株式会社 液晶表示装置
JPH02234134A (ja) * 1989-03-07 1990-09-17 Nec Corp 液晶表示装置用アクティブマトリクス基板
US5358810A (en) 1989-03-15 1994-10-25 Kabushiki Kaisha Toshiba Method of manufacturing liquid crystal display device
DE69020036T2 (de) 1989-04-04 1996-02-15 Sharp Kk Ansteuerschaltung für ein Matrixanzeigegerät mit Flüssigkristallen.
JPH02277244A (ja) * 1989-04-19 1990-11-13 Hitachi Ltd 半導体装置の製造方法
JPH02306627A (ja) 1989-05-22 1990-12-20 Fujitsu Ltd エッチング方法
JPH0334434A (ja) * 1989-06-30 1991-02-14 Hitachi Ltd 薄膜半導体装置及びその製造方法
GB2235326A (en) * 1989-08-16 1991-02-27 Philips Electronic Associated Active matrix liquid crystal colour display devices
GB2238683A (en) * 1989-11-29 1991-06-05 Philips Electronic Associated A thin film transistor circuit
US5227900A (en) 1990-03-20 1993-07-13 Canon Kabushiki Kaisha Method of driving ferroelectric liquid crystal element
JPH06208132A (ja) * 1990-03-24 1994-07-26 Sony Corp 液晶表示装置
JPH03287103A (ja) 1990-04-02 1991-12-17 Seiko Epson Corp カラーフィルターの形成法
JP2622183B2 (ja) 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
US5056895A (en) * 1990-05-21 1991-10-15 Greyhawk Systems, Inc. Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having fringing fields
US5182624A (en) 1990-08-08 1993-01-26 Minnesota Mining And Manufacturing Company Solid state electromagnetic radiation detector fet array
JP2808483B2 (ja) 1990-08-30 1998-10-08 キヤノン株式会社 液晶素子
JP2659473B2 (ja) 1990-09-28 1997-09-30 富士通株式会社 表示パネル駆動回路
US5210050A (en) * 1990-10-15 1993-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a semiconductor film
JPH04156402A (ja) * 1990-10-19 1992-05-28 Dainippon Printing Co Ltd カラーフィルター
JP3011993B2 (ja) 1990-10-26 2000-02-21 株式会社リコー カラー液晶素子
JP3024661B2 (ja) * 1990-11-09 2000-03-21 セイコーエプソン株式会社 アクティブマトリクス基板及びその製造方法
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
TW228633B (zh) * 1991-01-17 1994-08-21 Semiconductor Energy Res Co Ltd
EP0499979A3 (en) * 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2717233B2 (ja) 1991-03-06 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
US5521107A (en) 1991-02-16 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming a field-effect transistor including anodic oxidation of the gate
US5250818A (en) * 1991-03-01 1993-10-05 Board Of Trustees Of Leland Stanford University Low temperature germanium-silicon on insulator thin-film transistor
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
USRE36314E (en) 1991-03-06 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
JPH04283729A (ja) 1991-03-13 1992-10-08 Sharp Corp アクティブマトリクス表示装置
JP2625268B2 (ja) 1991-03-19 1997-07-02 シャープ株式会社 アクティブマトリクス基板
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2665477B2 (ja) 1991-05-23 1997-10-22 シャープ株式会社 光書き込み型液晶表示素子
US5414442A (en) 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US5269880A (en) 1992-04-03 1993-12-14 Northern Telecom Limited Tapering sidewalls of via holes
JP3288824B2 (ja) 1992-09-29 2002-06-04 キヤノン株式会社 金属酸化物の製造方法
US5309998A (en) 1992-11-19 1994-05-10 Intevep, S.A. Pumping system including flow directing shoe
JP3034434U (ja) 1996-08-06 1997-02-18 小沢コンクリート工業株式会社 廃水処理生物膜用担体
JP3539330B2 (ja) 2000-02-14 2004-07-07 日本電気株式会社 液晶表示パネル及びその製造方法
JP2001242803A (ja) 2000-02-29 2001-09-07 Sony Corp 表示装置及びその製造方法
JP4677654B2 (ja) 2000-04-19 2011-04-27 日本電気株式会社 透過型液晶表示装置及びその製造方法

Also Published As

Publication number Publication date
US5287205A (en) 1994-02-15
KR960008215B1 (ko) 1996-06-20
US5933205A (en) 1999-08-03
JPH11133464A (ja) 1999-05-21
US20090190056A1 (en) 2009-07-30
US7489367B1 (en) 2009-02-10
US7916232B2 (en) 2011-03-29
US5568288A (en) 1996-10-22
EP0506027A2 (en) 1992-09-30
JP2794499B2 (ja) 1998-09-03
US5963278A (en) 1999-10-05
KR960008103B1 (ko) 1996-06-19
JPH07318973A (ja) 1995-12-08
US6437367B1 (en) 2002-08-20
EP0506027A3 (en) 1993-06-09
JPH11125842A (ja) 1999-05-11
US6436815B1 (en) 2002-08-20

Similar Documents

Publication Publication Date Title
TW226043B (zh)
EP0506637A3 (zh)
EP0497252A3 (zh)
EP0503236A3 (zh)
DK0518777T3 (zh)
DK0539725T3 (zh)
EP0525670A3 (zh)
DK0572469T3 (zh)
DE4292011T1 (zh)
ECSM91545U (zh)
ECSDI910040S (zh)
ECSM91572U (zh)
ECSM91549U (zh)
IN172678B (zh)
ECSDI910041S (zh)
IN179915B (zh)
ECSM91575U (zh)
JPH0494216U (zh)
JPH04100632U (zh)
JPH0499100U (zh)
JPH0499050U (zh)
JPH0496951U (zh)
JPH0494992U (zh)
EP0521442A3 (zh)
EP0533158A3 (zh)