TW202531325A - Substrate processing device and substrate processing method - Google Patents
Substrate processing device and substrate processing methodInfo
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
本發明係關於在接合有複數片基板之積層基板形成填充層的基板處理裝置及基板處理方法者。基板處理裝置(1)具備:保持接合有第一基板(W1)與第二基板(W2)之積層基板(Ws),並使其旋轉之基板保持裝置(2);使構成填充層(L)之填充材料粒子(Fp)加速,並將填充材料粒子(Fp)噴吹在第一基板(W1)之邊緣部(E1)與第二基板(W2)之邊緣部(E2)的間隙(G)上之噴射噴嘴(3);及連結至噴射噴嘴(3),用於在噴射噴嘴(3)中供給填充材料粒子(Fp)之填充材料粒子供給管線(12)。The present invention relates to a substrate processing device and a substrate processing method for forming a filling layer on a laminated substrate having a plurality of substrates bonded thereto. The substrate processing device (1) comprises: a substrate holding device (2) for holding and rotating a laminated substrate (Ws) bonded thereto with a first substrate (W1) and a second substrate (W2); a spray nozzle (3) for accelerating filling material particles (Fp) constituting a filling layer (L) and spraying the filling material particles (Fp) onto a gap (G) between an edge portion (E1) of the first substrate (W1) and an edge portion (E2) of the second substrate (W2); and a filling material particle supply line (12) connected to the spray nozzle (3) for supplying the filling material particles (Fp) to the spray nozzle (3).
Description
本發明係關於一種在接合有複數片基板之積層基板形成填充層的基板處理裝置及基板處理方法。The present invention relates to a substrate processing apparatus and a substrate processing method for forming a filling layer on a laminated substrate in which a plurality of substrates are bonded.
近年來,為了達成半導體元件之進一步高密度化及高功能化,而進行積層複數片基板三維地積體化之三維封裝技術的開發。三維封裝技術例如將形成有積體電路及電配線之第一基板的元件面接合至形成有積體電路及電配線之第二基板的元件面。再者,將第一基板接合至第二基板後,藉由研磨裝置或磨削裝置將第二基板減薄化。如此,可在與第一基板及第二基板之元件面垂直的方向積層積體電路。In recent years, to achieve further densification and enhanced functionality of semiconductor components, development has been underway of three-dimensional packaging technology, which involves three-dimensionally integrating multiple substrates. For example, this technology involves bonding the component surface of a first substrate, where integrated circuits and electrical wiring are formed, to the component surface of a second substrate, where integrated circuits and electrical wiring are also formed. Furthermore, after bonding the first substrate to the second substrate, the second substrate is thinned using a polishing or grinding device. This allows the integrated circuit to be layered perpendicular to the component surfaces of the first and second substrates.
三維封裝技術亦可接合3片以上基板。例如,亦可將接合至第一基板之第二基板減薄化後,將第三基板接合至第二基板,並將第三基板減薄化。本說明書係將相互接合之複數片基板的形態稱為「積層基板」。Three-dimensional packaging technology can also be used to bond more than three substrates. For example, a second substrate bonded to a first substrate can be thinned, and then a third substrate bonded to the second substrate can be thinned. This specification refers to this configuration of multiple bonded substrates as a "laminated substrate."
通常,基板之邊緣部為了防止裂紋(Crack)或缺口(Chipping),而預先研磨成帶圓形狀或倒角形狀。磨削具有此種形狀之第二基板時,結果會在第二基板上形成銳利的端部。該銳利的端部(以下,稱刀緣部(knife edge))係藉由磨削之第二基板的背面與第二基板的外周面而形成。此種刀緣部容易因物理性接觸造成缺口,並在搬送積層基板時造成積層基板本身破損。此外,第一基板與第二基板之接合不完全時,第二基板也會在磨削中破裂。Typically, the edges of substrates are pre-ground into a rounded or chamfered shape to prevent cracking or chipping. When a second substrate having such a shape is ground, a sharp end is formed on the second substrate. This sharp end (hereinafter referred to as the knife edge) is formed by grinding the back surface and outer peripheral surface of the second substrate. This knife edge is prone to chipping due to physical contact, and can damage the laminated substrate itself when transporting the laminated substrate. Furthermore, if the bonding between the first and second substrates is incomplete, the second substrate may also crack during grinding.
因此,為了防止刀緣部之裂紋(Crack)或缺口(Chipping),係在磨削第二基板之前在積層基板上塗抹填充劑。填充劑塗抹在第一基板之邊緣部與第二基板的邊緣部間之間隙。填充劑支撐磨削第二基板後形成的刀緣部,可防止刀緣部裂紋或缺口。Therefore, to prevent cracking or chipping at the blade edge, a filler is applied to the laminate substrate before grinding the second substrate. The filler is applied to the gap between the edges of the first and second substrates. The filler supports the blade edge formed after grinding the second substrate, preventing cracking or chipping.
[先前技術文獻] [專利文獻] [專利文獻1]日本特開2022-38834號公報 [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Laid-Open No. 2022-38834
(發明所欲解決之問題) 過去,用於塗抹在第一基板之邊緣部與第二基板的邊緣部間之間隙的填充劑包含藉由熱而硬化的材料及溶劑等。使用此種填充劑對積層基板的塗抹工序,係進行在第一基板之邊緣部與第二基板的邊緣部間之間隙塗抹填充劑後,藉由熱使填充劑硬化,並且使填充劑中所含之溶劑揮發的硬化處理。因為該硬化處理需要的時間比較長,所以使整個程序的生產性降低。 (Problem to be Solved by the Invention) Historically, fillers used to fill the gap between the edges of a first and second substrate consisted of materials and solvents that harden with heat. The process of applying such fillers to a laminate substrate involves applying the filler to the gap between the edges of the first and second substrates, followed by a curing process in which the filler is cured by heat and the solvent contained in the filler is volatilized. This curing process takes a long time, reducing overall process productivity.
此外,硬化處理中,填充劑中所含之溶劑未完全除去而殘留時,殘留之溶劑之成分在後續的程序會污染基板,可能對元件帶來不良影響。因而,將第二基板減薄化後,需要從積層基板除去填充劑的工序。Furthermore, if the solvent contained in the filler is not completely removed during the curing process and remains, the remaining solvent components may contaminate the substrate in subsequent steps, potentially adversely affecting the device. Therefore, after thinning the second substrate, a process is required to remove the filler from the laminated substrate.
因此,本發明提供一種可抑制接合有複數片基板之積層基板的裂紋及缺口,且可提高處理程序之生產性的基板處理裝置、及基板處理方法。Therefore, the present invention provides a substrate processing apparatus and a substrate processing method that can suppress cracks and chips in a laminated substrate formed by bonding a plurality of substrates and improve the productivity of a processing procedure.
(解決問題之手段) 一個樣態提供一種基板處理裝置,係在接合有第一基板與第二基板之積層基板形成填充層的基板處理裝置,且具備:基板保持裝置,其係保持前述積層基板並使其旋轉;噴射噴嘴,其係使構成前述填充層之填充材料粒子加速,並將前述填充材料粒子噴吹在前述第一基板之邊緣部與前述第二基板之邊緣部的間隙上;及填充材料粒子供給管線,其係連結至前述噴射噴嘴,用於在前述噴射噴嘴中供給前述填充材料粒子。 一個樣態係前述噴射噴嘴係電漿噴鍍(plasma spraying)噴嘴,其係藉由電漿引起之熱使前述填充材料粒子加速,並且藉由前述電漿引起之熱使前述填充材料粒子熔化。 一個樣態係前述噴射噴嘴係火焰噴鍍(flame spraying)噴嘴,其係藉由燃燒火焰引起之熱使前述填充材料粒子加速,並且藉由前述燃燒火焰引起之熱使前述填充材料粒子熔化。 一個樣態係前述噴射噴嘴係拉瓦爾(de Laval nozzle)噴嘴,其係使前述填充材料粒子加速至音速以上。 (Solution) One aspect provides a substrate processing apparatus for forming a filling layer on a laminate substrate comprising a first substrate and a second substrate bonded thereto. The apparatus comprises: a substrate holding device for holding and rotating the laminate substrate; a spray nozzle for accelerating filling material particles constituting the filling layer and spraying the filling material particles onto a gap between an edge portion of the first substrate and an edge portion of the second substrate; and a filling material particle supply line connected to the spray nozzle for supplying the filling material particles to the spray nozzle. In one embodiment, the spray nozzle is a plasma spraying nozzle, in which the heat generated by the plasma accelerates the filler material particles and melts the filler material particles. In another embodiment, the spray nozzle is a flame spraying nozzle, in which the heat generated by a combustion flame accelerates the filler material particles and melts the filler material particles. In another embodiment, the spray nozzle is a de Laval nozzle, in which the filler material particles are accelerated to a speed exceeding the speed of sound.
一個樣態係前述基板處理裝置進一步具備加熱氣體供給管線,其係連結至前述拉瓦爾噴嘴,用於對前述拉瓦爾噴嘴供給加熱氣體,前述拉瓦爾噴嘴係以前述加熱氣體使前述填充材料粒子加溫之方式而構成。 一個樣態係前述基板處理裝置進一步具備氣化室,其係連結至前述填充材料粒子供給管線,使身為前述填充材料粒子之材料的填充材料氣化,前述拉瓦爾噴嘴係以使從前述氣化之填充材料所形成的前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述間隙上之方式而構成。 一個樣態係前述基板處理裝置進一步具備懸濁液生成裝置,其係連結至前述填充材料粒子供給管線,使前述填充材料粒子分散於液體,而生成包含前述填充材料粒子之懸濁液,前述噴射噴嘴係以使前述懸濁液加速,並將前述懸濁液噴吹在前述間隙上之方式而構成。 一個樣態係前述基板處理裝置進一步具備氣溶膠室(aerosol chamber),其係連結至前述填充材料粒子供給管線,使前述填充材料粒子氣溶膠化,前述噴射噴嘴係以使前述氣溶膠化之填充材料粒子加速,並將前述氣溶膠化之填充材料粒子噴吹在前述間隙上的方式而構成。 In one embodiment, the substrate processing apparatus further comprises a heating gas supply line connected to the Laval nozzle for supplying heating gas to the Laval nozzle. The Laval nozzle is configured to heat the filler particles with the heating gas. In another embodiment, the substrate processing apparatus further comprises a vaporization chamber connected to the filler particle supply line for vaporizing a filler material, which is a material of the filler particles. The Laval nozzle is configured to accelerate the filler particles formed from the vaporized filler material and spray the filler particles onto the gap. In one embodiment, the substrate processing apparatus further comprises a suspension generating device connected to the filler particle supply line for dispersing the filler particles in a liquid to generate a suspension containing the filler particles. The spray nozzle is configured to accelerate the suspension and spray the suspension onto the gap. In another embodiment, the substrate processing apparatus further comprises an aerosol chamber connected to the filler particle supply line for aerosolizing the filler particles. The spray nozzle is configured to accelerate the aerosolized filler particles and spray the aerosolized filler particles onto the gap.
一個樣態係前述基板處理裝置進一步具備搖動機構,其係將指定之搖動中心作為中心而使前述積層基板或前述噴射噴嘴搖動。 一個樣態係前述基板處理裝置進一步具備移動機構,其係使前述積層基板或前述噴射噴嘴在前述積層基板之厚度方向移動。 一個樣態係前述基板處理裝置進一步具備:邊緣形狀檢測器,其係檢測前述積層基板之邊緣部的形狀;及動作控制部,其係控制前述搖動機構之動作;前述動作控制部係以依據前述檢測出之邊緣部的形狀,使前述搖動機構將前述搖動中心作為中心來搖動前述積層基板或前述噴射噴嘴之方式而構成。 一個樣態係前述基板處理裝置進一步具備:邊緣形狀檢測器,其係檢測前述積層基板之邊緣部的形狀;及動作控制部,其係控制前述移動機構之動作;前述動作控制部係以依據前述檢測出之邊緣部的形狀,使前述移動機構在前述積層基板之前述厚度方向移動前述積層基板或前述噴射噴嘴之方式而構成。 一個樣態係前述填充材料粒子由與構成前述積層基板之材料相同材料或其化合物而構成。 一個樣態係前述填充材料粒子由陶瓷構成。 In one embodiment, the substrate processing apparatus further comprises a rocking mechanism for rocking the laminated substrate or the spray nozzle about a designated rocking center. In another embodiment, the substrate processing apparatus further comprises a moving mechanism for moving the laminated substrate or the spray nozzle in a thickness direction of the laminated substrate. In one embodiment, the substrate processing apparatus further comprises: an edge shape detector for detecting the shape of the edge of the laminated substrate; and a motion control unit for controlling the motion of the rocking mechanism; the motion control unit is configured to cause the rocking mechanism to rock the laminated substrate or the ejection nozzle about the rocking center based on the detected edge shape. In one embodiment, the substrate processing apparatus further comprises: an edge shape detector for detecting the shape of the edge of the laminated substrate; and a motion control unit for controlling the movement of the movement mechanism; the motion control unit is configured to cause the movement mechanism to move the laminated substrate or the spray nozzle in the thickness direction of the laminated substrate based on the detected edge shape. In another embodiment, the filler particles are composed of the same material as the material constituting the laminated substrate, or a compound thereof. In another embodiment, the filler particles are composed of ceramic.
一個樣態提供一種基板處理方法,係在接合有第一基板與第二基板之積層基板形成填充層的基板處理方法,且對噴射噴嘴供給構成前述填充層之填充材料粒子,使前述積層基板旋轉,同時藉由前述噴射噴嘴使前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述第一基板之邊緣部與前述第二基板的邊緣部之間隙上。 一個樣態係藉由前述噴射噴嘴使前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述間隙上者,係藉由電漿噴鍍噴嘴以電漿引起之熱使前述填充材料粒子加速,並且以前述電漿引起之熱使前述填充材料粒子熔化,並將前述熔化之填充材料粒子噴吹在前述間隙上。 一個樣態係藉由前述噴射噴嘴使前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述間隙上者,係藉由火焰噴鍍噴嘴以燃燒火焰之熱使前述填充材料粒子加速,並且以前述燃燒火焰引起之熱使前述填充材料粒子熔化,並將前述熔化之填充材料粒子噴吹在前述間隙上。 一個樣態係藉由前述噴射噴嘴使前述填充材料粒子加速者,係藉由拉瓦爾噴嘴(de Laval nozzle)使前述填充材料粒子加速至音速以上。 One aspect provides a substrate processing method for forming a filling layer on a laminate substrate comprising a first substrate and a second substrate bonded thereto. Filler material particles constituting the filling layer are supplied to a spray nozzle. The laminate substrate is rotated while the spray nozzle accelerates the filler material particles and sprays the filler material particles onto a gap between an edge of the first substrate and an edge of the second substrate. In another aspect, the method of accelerating the filler material particles and spraying them onto the gap by the spray nozzle involves accelerating the filler material particles using heat generated by plasma using a plasma plating nozzle, melting the filler material particles using the heat generated by the plasma, and spraying the melted filler material particles onto the gap. One embodiment involves accelerating the filler material particles using the jet nozzle and spraying them onto the gap. A flame plating nozzle accelerates the filler material particles using the heat of a combustion flame, melts the filler material particles using the heat generated by the combustion flame, and sprays the melted filler material particles onto the gap. Another embodiment involves accelerating the filler material particles using the jet nozzle, accelerating the filler material particles to a speed exceeding the speed of sound using a de Laval nozzle.
一個樣態係前述基板處理方法進一步包含在前述拉瓦爾噴嘴中供給加熱氣體,藉由前述噴射噴嘴使前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述間隙上者,係藉由前述拉瓦爾噴嘴使前述填充材料粒子加速至音速以上,並且以前述加熱氣體使前述填充材料粒子加溫,並將前述加溫後之填充材料粒子噴吹在前述間隙上。 一個樣態係在前述噴射噴嘴中供給前述填充材料粒子者,係將身為前述填充材料粒子之材料的填充材料氣化,並在前述噴射噴嘴中供給從前述氣化之填充材料所形成的填充材料粒子;且藉由前述噴射噴嘴使前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述間隙上者,係藉由前述拉瓦爾噴嘴使前述填充材料粒子加速至音速以上,並將前述填充材料粒子噴吹在前述間隙上。 一個樣態係在前述噴射噴嘴中供給前述填充材料粒子者,係使前述填充材料粒子分散於液體而生成含前述填充材料粒子之懸濁液,並在前述噴射噴嘴中供給前述懸濁液;藉由前述噴射噴嘴使前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述間隙上者,係藉由前述噴射噴嘴使前述懸濁液加速,並將前述懸濁液噴吹在前述間隙上。 一個樣態係在前述噴射噴嘴中供給前述填充材料粒子者,係使前述填充材料粒子氣溶膠(aerosol)化,並在前述噴射噴嘴中供給前述氣溶膠化之填充材料粒子;藉由前述噴射噴嘴使前述填充材料粒子加速,並將前述填充材料粒子噴吹在前述間隙上者,係藉由前述噴射噴嘴使前述氣溶膠化之填充材料粒子加速,並將前述氣溶膠化之填充材料粒子噴吹在前述間隙上。 In one embodiment, the substrate processing method further includes supplying a heated gas to the Laval nozzle, accelerating the filler material particles via the spray nozzle, and spraying the filler material particles onto the gap. The Laval nozzle accelerates the filler material particles to a speed exceeding the speed of sound, heats the filler material particles with the heated gas, and sprays the heated filler material particles onto the gap. In one embodiment, the filler particles are supplied to the injection nozzle by vaporizing a filler material serving as the material of the filler particles, and the filler particles formed from the vaporized filler material are supplied to the injection nozzle. Furthermore, the filler particles are accelerated by the injection nozzle and sprayed onto the gap, and the filler particles are accelerated to a speed exceeding the speed of sound by the Laval nozzle and sprayed onto the gap. In one embodiment, the filler particles are supplied to the spray nozzle by dispersing the filler particles in a liquid to form a suspension containing the filler particles, and the suspension is supplied to the spray nozzle. The filler particles are accelerated by the spray nozzle and sprayed onto the gap by the spray nozzle. One embodiment includes supplying the filler particles to the spray nozzle, aerosolizing the filler particles, and supplying the aerosolized filler particles to the spray nozzle; accelerating the filler particles via the spray nozzle and spraying the filler particles onto the gap; and accelerating the aerosolized filler particles via the spray nozzle and spraying the aerosolized filler particles onto the gap.
一個樣態係前述基板處理方法進一步包含將指定之搖動中心作為中心而使前述積層基板或前述噴射噴嘴搖動。 一個樣態係前述基板處理方法進一步包含使前述積層基板或前述噴射噴嘴在前述積層基板之厚度方向移動。 一個樣態係前述基板處理方法進一步包含檢測前述積層基板之邊緣部的形狀,並依據前述檢測出之邊緣部的形狀,將前述搖動中心作為中心而使前述積層基板或前述噴射噴嘴搖動。 一個樣態係前述基板處理方法進一步包含檢測前述積層基板之邊緣部的形狀,並依據前述檢測出之邊緣部的形狀,使前述積層基板或前述噴射噴嘴在前述積層基板之前述厚度方向移動。 一個樣態係前述填充材料粒子由與構成前述積層基板之材料相同的材料或其化合物而構成。 一個樣態係前述填充材料粒子由陶瓷構成。 In one embodiment, the substrate processing method further includes oscillating the laminated substrate or the spray nozzle about a designated oscillation center. In another embodiment, the substrate processing method further includes moving the laminated substrate or the spray nozzle in the thickness direction of the laminated substrate. In another embodiment, the substrate processing method further includes detecting the shape of an edge of the laminated substrate and oscillating the laminated substrate or the spray nozzle about the oscillation center based on the detected edge shape. In one embodiment, the substrate processing method further includes detecting the shape of an edge of the laminate substrate and moving the laminate substrate or the spray nozzle in the thickness direction of the laminate substrate based on the detected edge shape. In another embodiment, the filler particles are composed of the same material as the material constituting the laminate substrate, or a compound thereof. In another embodiment, the filler particles are composed of ceramic.
(發明之效果) 採用本發明時,藉由在第一基板之邊緣部與第二基板的邊緣部之間隙形成填充層,來保護形成於第二基板之邊緣部的刀緣部。結果,可抑制積層基板之裂紋及缺口。此外,因為填充層係藉由使填充材料粒子加速,將填充材料粒子噴吹在第一基板之邊緣部與第二基板之邊緣部的間隙上而形成,之後不需要硬化工序,所以可提高處理程序之生產性。 (Effects of the Invention) This invention forms a filling layer between the edges of the first and second substrates, protecting the knife edge formed on the edge of the second substrate. As a result, cracks and gaps in the laminated substrate are suppressed. Furthermore, because the filling layer is formed by accelerating filler particles and spraying them onto the gap between the edges of the first and second substrates, a subsequent curing step is unnecessary, improving process productivity.
以下,參照圖式說明本發明之實施形態。 圖1A係顯示成為處理對象之積層基板Ws的邊緣部之一例的剖面圖。如圖1A所示,積層基板Ws具有接合第一基板W1與第二基板W2之構造。本實施形態使用之第一基板W1及第二基板W2係圓形。 The following describes embodiments of the present invention with reference to the accompanying drawings. Figure 1A is a cross-sectional view showing an example of the edge of a laminate substrate Ws being processed. As shown in Figure 1A, the laminate substrate Ws has a structure in which a first substrate W1 and a second substrate W2 are bonded. In this embodiment, the first and second substrates W1 and W2 are circular.
第一基板W1之邊緣部E1係對第一基板W1之接合面(例如元件面)S1傾斜的最外側面。更具體而言,第一基板W1之邊緣部E1具有帶圓形狀或倒角形狀。第二基板W2之邊緣部E2亦同樣地係對第二基板W2之接合面(例如元件面)S2傾斜的最外側面。更具體而言,第二基板W2之邊緣部E2具有帶圓形狀或倒角形狀。邊緣部E1, E2亦稱為斜角(bevel)部。在第一基板W1之邊緣部E1與第二基板W2的邊緣部E2之間形成有間隙G。積層基板Ws之邊緣部包含第一基板W1之邊緣部E1及第二基板W2之邊緣部E2。The edge E1 of the first substrate W1 is the outermost surface inclined relative to the bonding surface (e.g., component surface) S1 of the first substrate W1. More specifically, the edge E1 of the first substrate W1 has a rounded or chamfered shape. Similarly, the edge E2 of the second substrate W2 is the outermost surface inclined relative to the bonding surface (e.g., component surface) S2 of the second substrate W2. More specifically, the edge E2 of the second substrate W2 has a rounded or chamfered shape. The edges E1 and E2 are also referred to as bevel portions. A gap G is formed between the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2. The edge of the laminate substrate Ws includes the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2.
圖1B係顯示形成有填充層L之積層基板Ws的邊緣部之一例的剖面圖。填充層L形成於第一基板W1之邊緣部E1與第二基板W2的邊緣部E2間之間隙G。該間隙G遍及積層基板Ws的全周形成,並具有概略三角形狀之剖面。填充層L係以填滿該間隙G之方式而形成。Figure 1B shows a cross-sectional view of an example edge portion of a laminated substrate Ws with a filling layer L formed thereon. The filling layer L is formed in a gap G between the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2. This gap G extends throughout the entire circumference of the laminated substrate Ws and has a roughly triangular cross-section. The filling layer L is formed to completely fill this gap G.
圖1C係顯示形成填充層L後減薄化之積層基板Ws的邊緣部之一例的剖面圖。該減薄化工序結果,在第二基板W2之邊緣部E2上形成刀緣部Ek。由於刀緣部Ek藉由填充層L保持(支撐),因此防止刀緣部Ek之裂紋(Crack)或缺口(Chipping)。Figure 1C shows a cross-sectional view of an example of the edge of a laminated substrate Ws after thinning after forming a filler layer L. This thinning process forms a knife edge Ek on the edge E2 of the second substrate W2. Because the filler layer L supports the knife edge Ek, cracking or chipping of the knife edge Ek is prevented.
圖2係顯示基板處理裝置1之一種實施形態的前視圖,圖3係圖2所示之基板處理裝置1的側視圖。基板處理裝置1係用於在接合有第一基板W1與第二基板W2之積層基板Ws形成填充層L的裝置。基板處理裝置1具備:以縱姿態保持積層基板Ws,並使保持之積層基板Ws旋轉的基板保持裝置2;及用於在積層基板Ws形成填充層L之噴射噴嘴3。Figure 2 is a front view of one embodiment of a substrate processing apparatus 1, and Figure 3 is a side view of the substrate processing apparatus 1 shown in Figure 2. The substrate processing apparatus 1 is used to form a filling layer L on a laminated substrate Ws, which is formed by bonding a first substrate W1 and a second substrate W2. The substrate processing apparatus 1 includes a substrate holding device 2 that holds the laminated substrate Ws in a vertical position and rotates the held laminated substrate Ws, and a spray nozzle 3 that forms the filling layer L on the laminated substrate Ws.
基板保持裝置2具備:保持積層基板Ws之背面的保持載台5;連結至保持載台5之中央部的旋轉軸6;及使保持載台5及旋轉軸6旋轉之旋轉機構8。保持載台5係以藉由真空吸附而保持積層基板Ws之背面的方式而構成。如圖3所示,保持載台5具有對水平面垂直之保持面5a。積層基板Ws藉由保持載台5以積層基板Ws之平坦部對水平面垂直的方式而受保持。因此,積層基板Ws係藉由基板保持裝置2以縱姿態保持。The substrate holding device 2 includes a holding stage 5 for holding the back surface of the laminated substrate Ws; a rotation shaft 6 connected to the center of the holding stage 5; and a rotation mechanism 8 for rotating the holding stage 5 and the rotation shaft 6. The holding stage 5 is configured to hold the back surface of the laminated substrate Ws by vacuum suction. As shown in FIG3 , the holding stage 5 has a holding surface 5a perpendicular to the horizontal plane. The laminated substrate Ws is held by the holding stage 5 such that the flat portion of the laminated substrate Ws is perpendicular to the horizontal plane. Therefore, the laminated substrate Ws is held in a vertical position by the substrate holding device 2.
旋轉機構8具備馬達(無圖示)。旋轉機構8係以使保持載台5及保持於保持載台5之積層基板Ws,將基板保持裝置2之旋轉軸心R作為中心,而在圖2之箭頭指示的方向一體旋轉之方式而構成。The rotating mechanism 8 includes a motor (not shown). The rotating mechanism 8 is configured to rotate the holding stage 5 and the laminated substrate Ws held thereon in unison about the rotation axis R of the substrate holding device 2 in the direction indicated by the arrow in FIG. 2 .
一種實施形態係基板保持裝置2亦可取代保持載台5,而具備可接觸積層基板Ws之周緣部的複數個(例如4個)輥子(無圖示),積層基板Ws亦可藉由此等輥子以積層基板Ws之平坦部對水平面垂直的方式來受保持。此時,基板保持裝置2係取代旋轉軸6及旋轉機構8,而具備將其軸心作為中心使各個輥子在相同方向以相同速度旋轉的輥子旋轉機構(無圖示)。藉由輥子旋轉機構使複數個輥子旋轉,積層基板Ws將基板保持裝置2之旋轉中心作為中心而旋轉。In one embodiment, the substrate holding device 2 may include, in place of the holding stage 5, a plurality (e.g., four) of rollers (not shown) capable of contacting the periphery of the laminate substrate Ws. These rollers can also hold the laminate substrate Ws with the flat portion of the laminate substrate Ws perpendicular to the horizontal plane. In this case, the substrate holding device 2 may include, in place of the rotation shaft 6 and the rotation mechanism 8, a roller rotation mechanism (not shown) that rotates each roller in the same direction and at the same speed about the axis of the roller. The roller rotation mechanism rotates the plurality of rollers, causing the laminate substrate Ws to rotate about the rotation center of the substrate holding device 2.
其他實施形態係基板保持裝置2之保持載台5具有與水平面平行的保持面,積層基板Ws亦可藉由保持載台5以積層基板Ws之平坦部與水平面平行的方式而保持。亦即,積層基板Ws亦可藉由基板保持裝置2以橫姿態保持。In another embodiment, the holding stage 5 of the substrate holding device 2 has a holding surface parallel to the horizontal plane, and the laminated substrate Ws can also be held by the holding stage 5 in such a manner that the flat portion of the laminated substrate Ws is parallel to the horizontal plane. In other words, the laminated substrate Ws can also be held in a horizontal position by the substrate holding device 2.
基板處理裝置1具備用於將構成填充層L之填充材料粒子Fp供給至噴射噴嘴3的填充材料粒子供給管線12。填充材料粒子供給管線12連結至噴射噴嘴3。噴射噴嘴3經由填充材料粒子供給管線12連結至填充材料粒子供給源13。填充材料粒子Fp係不含溶劑等揮發成分之粉體。一種實施形態係填充材料粒子Fp之粒子徑(直徑)在1μm~100μm之範圍內,更宜為填充材料粒子Fp之粒子徑(直徑)在1μm~10μm之範圍內。填充材料粒子供給源13之例可舉出盤(disk)式粉末送料器(powder feeder)。The substrate processing apparatus 1 includes a filler particle supply line 12 for supplying filler particles Fp constituting the filler layer L to the spray nozzle 3. The filler particle supply line 12 is connected to the spray nozzle 3. The spray nozzle 3 is connected to a filler particle supply source 13 via the filler particle supply line 12. The filler particles Fp are powders that do not contain volatile components such as solvents. In one embodiment, the particle size (diameter) of the filler particles Fp is in the range of 1 μm to 100 μm, more preferably in the range of 1 μm to 10 μm. An example of the filler particle supply source 13 is a disk-type powder feeder.
填充材料粒子Fp由與構成積層基板Ws之材料相同的材料(例如,矽等)、或其化合物(例如,氧化矽、氮化矽、碳化矽等)構成。一種實施形態係填充材料粒子Fp亦可係具有接近積層基板Ws之機械特性(例如拉伸強度)及熱特性(例如,耐熱性及線膨脹係數等)的材料(例如,氧化鋁、氧化鋯、氧化矽、氮化矽、碳化矽等之陶瓷)、及在半導體製造程序中使用的其他材料(例如,鎢等金屬、碳等)。使用由此種材料構成之填充材料粒子Fp而形成於積層基板Ws的填充層L在後續程序中不致污染積層基板Ws。因此,將第二基板W2減薄化後,由於不需要從積層基板Ws除去填充層L,所以可提高整個程序的生產性。The filler particles Fp are composed of the same material as that constituting the laminate substrate Ws (e.g., silicon), or a compound thereof (e.g., silicon oxide, silicon nitride, silicon carbide, etc.). In one embodiment, the filler particles Fp may also be a material having mechanical properties (e.g., tensile strength) and thermal properties (e.g., heat resistance and linear expansion coefficient) similar to those of the laminate substrate Ws (e.g., ceramics such as aluminum oxide, zirconium oxide, silicon oxide, silicon nitride, silicon carbide), or other materials used in semiconductor manufacturing processes (e.g., metals such as tungsten, carbon, etc.). The filler layer L formed on the laminate substrate Ws using filler particles Fp composed of such materials does not contaminate the laminate substrate Ws during subsequent processes. Therefore, after thinning the second substrate W2, there is no need to remove the filling layer L from the laminate substrate Ws, so the productivity of the entire process can be improved.
填充材料粒子供給源13經由載體氣(carrier gas)供給管線15而連結至載體氣供給源16。載體氣從載體氣供給源16通過載體氣供給管線15而供給至填充材料粒子供給源13時,填充材料粒子供給源13內之填充材料粒子Fp與載體氣一起流入填充材料粒子供給管線12。填充材料粒子Fp與載體氣一起通過填充材料粒子供給管線12供給至噴射噴嘴3。載體氣之例可舉出氮、空氣、氦、氬等氣體、或此等之混合氣體。The filler particle supply source 13 is connected to a carrier gas supply source 16 via a carrier gas supply line 15. When carrier gas is supplied from the carrier gas supply source 16 through the carrier gas supply line 15 to the filler particle supply source 13, the filler particles Fp in the filler particle supply source 13 flow into the filler particle supply line 12 along with the carrier gas. The filler particles Fp are then supplied to the injection nozzle 3 along with the carrier gas through the filler particle supply line 12. Examples of carrier gas include nitrogen, air, helium, argon, and other gases, or mixed gases thereof.
在載體氣供給管線15中安裝有流量調整閥17及流量計18。流量調整閥17係以調節流經載體氣供給管線15之載體氣流量的方式而構成。載體氣供給管線15經由填充材料粒子供給源13連通至填充材料粒子供給管線12。因此,流經填充材料粒子供給管線12之載體氣及填充材料粒子Fp的流量可藉由流量調整閥17來調節。流量計18係以量測流經載體氣供給管線15之載體氣流量的方式而構成。一種實施形態係流量調整閥17及流量計18亦可安裝於填充材料粒子供給管線12。A flow regulating valve 17 and a flow meter 18 are installed in the carrier gas supply line 15. The flow regulating valve 17 is configured to regulate the flow of carrier gas flowing through the carrier gas supply line 15. The carrier gas supply line 15 is connected to the filler particle supply line 12 via the filler particle supply source 13. Therefore, the flow of carrier gas and filler particles Fp flowing through the filler particle supply line 12 can be regulated by the flow regulating valve 17. The flow meter 18 is configured to measure the flow of carrier gas flowing through the carrier gas supply line 15. In one embodiment, the flow regulating valve 17 and the flow meter 18 may also be installed in the filler particle supply line 12.
噴射噴嘴3位於被基板保持裝置2保持之積層基板Ws的半徑方向外側,並在積層基板Ws之上方與積層基板Ws的間隙G相對配置。噴射噴嘴3係以使填充材料粒子Fp加速,並將填充材料粒子Fp噴吹在積層基板Ws之第一基板W1的邊緣部E1與第二基板W2之邊緣部E2的間隙G上之方式而構成。噴射噴嘴3係以使加速之填充材料粒子Fp碰撞積層基板Ws,並在積層基板Ws之間隙G形成填充層L的方式而構成。The spray nozzle 3 is located radially outward from the stacking substrate Ws held by the substrate holder 2, and is positioned above the stacking substrate Ws, facing the gap G between the stacking substrates Ws. The spray nozzle 3 is configured to accelerate filler particles Fp and spray them into the gap G between the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2 of the stacking substrate Ws. The spray nozzle 3 is configured to cause the accelerated filler particles Fp to collide with the stacking substrate Ws, forming a filling layer L in the gap G between the stacking substrates Ws.
一種實施形態係從噴射噴嘴3噴射之填充材料粒子Fp的速度為150m/秒以上。如後述,噴射噴嘴3係以使通過填充材料粒子供給管線12而供給之填充材料粒子Fp加速的方式而構成。一種實施形態係通過填充材料粒子供給管線12與載體氣一起供給至噴射噴嘴3之填充材料粒子Fp的速度足夠快時,噴射噴嘴3亦可不設使填充材料粒子Fp加速之機構。亦即,噴射噴嘴3亦可在通過填充材料粒子供給管線12供給至噴射噴嘴3的速度情況下,將填充材料粒子Fp噴吹在積層基板Ws之間隙G上的方式而構成。In one embodiment, the speed of the filler particles Fp ejected from the ejection nozzle 3 is 150 m/s or greater. As described later, the ejection nozzle 3 is configured to accelerate the filler particles Fp supplied through the filler particle supply line 12. In another embodiment, if the speed of the filler particles Fp supplied to the ejection nozzle 3 along with the carrier gas through the filler particle supply line 12 is sufficiently high, the ejection nozzle 3 may not be provided with a mechanism for accelerating the filler particles Fp. In other words, the ejection nozzle 3 may be configured to spray the filler particles Fp onto the gap G of the laminated substrate Ws at the speed supplied to the ejection nozzle 3 through the filler particle supply line 12.
藉由噴射噴嘴3對積層基板Ws形成填充層L,係藉由基板保持裝置2使積層基板Ws旋轉的同時進行。藉此,可在包含積層基板Ws全周所形成之間隙G形成填充層L。The filling layer L is formed on the laminated substrate Ws by the spray nozzle 3 while the laminated substrate Ws is rotated by the substrate holding device 2. Thus, the filling layer L can be formed in the gap G formed around the entire circumference of the laminated substrate Ws.
基板處理裝置1進一步具備與基板保持裝置2、噴射噴嘴3、流量調整閥17、及流量計18電性連接之動作控制部10。基板保持裝置2、噴射噴嘴3、及流量調整閥17之動作藉由動作控制部10來控制。藉由流量計18所量測之流經載體氣供給管線15的載體氣流量送至動作控制部10。The substrate processing apparatus 1 further includes a motion control unit 10 electrically connected to the substrate holding device 2, the spray nozzle 3, a flow regulating valve 17, and a flow meter 18. The motion control unit 10 controls the operation of the substrate holding device 2, the spray nozzle 3, and the flow regulating valve 17. The carrier gas flow rate flowing through the carrier gas supply line 15, measured by the flow meter 18, is transmitted to the motion control unit 10.
動作控制部10至少由1台電腦構成。動作控制部10具備:儲存有程式之記憶裝置10a;及按照程式中所含之命令執行演算的演算裝置10b。記憶裝置10a具備:隨機存取記憶體(RAM)等主記憶裝置,與硬碟機(HDD)、固態硬碟(SSD)等輔助記憶裝置。演算裝置10b之例可舉出CPU(中央處理裝置)、GPU(圖形處理單元)。不過,動作控制部10之具體構成不限定於此等之例。The motion control unit 10 is composed of at least one computer. It includes a memory device 10a that stores programs and a calculation device 10b that executes calculations according to the instructions contained in the programs. The memory device 10a includes a primary memory device such as a random access memory (RAM), and secondary memory devices such as a hard disk drive (HDD) and a solid-state drive (SSD). Examples of the calculation device 10b include a CPU (central processing unit) and a GPU (graphics processing unit). However, the specific configuration of the motion control unit 10 is not limited to these examples.
圖4係顯示噴射噴嘴3之一種實施形態的示意圖。本實施形態之噴射噴嘴3係電漿噴鍍噴嘴。電漿噴鍍噴嘴係以產生電漿,以該電漿之熱使填充材料粒子Fp加速,並且使填充材料粒子Fp熔化之方式而構成。電漿噴鍍噴嘴連結至用於將用於產生電漿之電漿氣體供給至電漿噴鍍噴嘴的電漿氣體供給管線20。電漿氣體供給管線20連結至無圖示之電漿氣體供給源。電漿氣體從電漿氣體供給源通過電漿氣體供給管線20而供給至電漿噴鍍噴嘴。電漿氣體之例可舉出氬、氮等。FIG4 is a schematic diagram showing one embodiment of the spray nozzle 3. The spray nozzle 3 of this embodiment is a plasma plating nozzle. A plasma plating nozzle is configured to generate plasma, accelerate filler particles Fp using the heat of the plasma, and melt the filler particles Fp. The plasma plating nozzle is connected to a plasma gas supply line 20 for supplying plasma gas used to generate the plasma to the plasma plating nozzle. The plasma gas supply line 20 is connected to a plasma gas supply source (not shown). Plasma gas is supplied from a plasma gas supply source to the plasma plating nozzle through a plasma gas supply line 20. Examples of plasma gas include argon and nitrogen.
電漿噴鍍噴嘴具備:具有概略圓筒形狀之噴嘴本體22;收容於噴嘴本體22內之陰極23及陽極24;及連通至電漿氣體供給管線20之電漿氣體流路25。噴嘴本體22在其前端具有用於噴出填充材料粒子Fp之噴射口22a。電漿氣體流路25藉由噴嘴本體22之內面、陰極23之外面、及陽極24的外面而形成,並延伸至噴射口22a。通過電漿氣體供給管線20供給至電漿噴鍍噴嘴之電漿氣體朝向噴射口22a流經電漿氣體流路25。從無圖示之電源在陰極23及陽極24上施加有電壓。藉由在施加了電壓的陰極23與陽極24之間供給電漿氣體,而產生電漿(電弧電漿)P。The plasma plating nozzle comprises a roughly cylindrical nozzle body 22; a cathode 23 and an anode 24 housed within the nozzle body 22; and a plasma gas flow path 25 connected to the plasma gas supply line 20. The nozzle body 22 has a nozzle 22a at its front end for ejecting filler particles Fp. The plasma gas flow path 25 is formed by the inner surface of the nozzle body 22, the outer surface of the cathode 23, and the outer surface of the anode 24, and extends to the nozzle 22a. Plasma gas supplied to the plasma plating nozzle via the plasma gas supply line 20 flows through the plasma gas flow path 25 toward the nozzle 22a. A voltage is applied from a power source (not shown) to the cathode 23 and the anode 24. Plasma (arc plasma) P is generated by supplying plasma gas between the cathode 23 and the anode 24 to which the voltage is applied.
電漿噴鍍噴嘴進一步具備連結至填充材料粒子供給管線12之填充材料粒子導入管線27。本實施形態之填充材料粒子導入管線27係在噴嘴本體22之下部貫穿噴嘴本體22,並對噴嘴本體22之長度方向垂直地延伸。填充材料粒子導入管線27連通至電漿氣體流路25,填充材料粒子導入管線27之出口端部鄰接於噴射口22a。The plasma plating nozzle further includes a filler particle introduction line 27 connected to the filler particle supply line 12. In this embodiment, the filler particle introduction line 27 penetrates the nozzle body 22 at its lower portion and extends perpendicularly to the length of the nozzle body 22. The filler particle introduction line 27 is connected to the plasma gas flow path 25, and the outlet end of the filler particle introduction line 27 is adjacent to the injection port 22a.
載體氣及填充材料粒子Fp通過填充材料粒子供給管線12及填充材料粒子導入管線27,供給至在電漿氣體流路25的陰極23及陽極24之間產生的電漿P。填充材料粒子導入管線27之構成只要是可將填充材料粒子Fp供給至在陰極23及陽極24之間產生的電漿P者,則不限定於本實施形態。例如,電漿噴鍍噴嘴亦可具備複數條填充材料粒子導入管線27。其他例係填充材料粒子導入管線27亦可對噴嘴本體22之長度方向傾斜延伸,或是,填充材料粒子導入管線27亦可貫穿陰極23,並在噴嘴本體22之長度方向延伸。The carrier gas and filler particles Fp are supplied to the plasma P generated between the cathode 23 and the anode 24 in the plasma gas flow path 25 via the filler particle supply line 12 and the filler particle introduction line 27. The configuration of the filler particle introduction line 27 is not limited to that of the present embodiment, as long as it can supply the filler particles Fp to the plasma P generated between the cathode 23 and the anode 24. For example, the plasma plating nozzle may include a plurality of filler particle introduction lines 27. Alternatively, the filler particle introduction line 27 may extend obliquely with respect to the longitudinal direction of the nozzle body 22, or the filler particle introduction line 27 may penetrate the cathode 23 and extend longitudinally of the nozzle body 22.
通過填充材料粒子導入管線27供給至電漿氣體流路25之電漿P的載體氣藉由電漿P之熱急速膨脹,並通過噴射口22a產生吹出噴流。填充材料粒子Fp藉由該噴流加速,並通過噴射口22a從電漿噴鍍噴嘴噴射。此外,填充材料粒子Fp藉由電漿P之熱而熔化,熔化後之填充材料粒子Fp從電漿噴鍍噴嘴噴射。The carrier gas in the plasma P supplied to the plasma gas flow path 25 via the filler particle introduction line 27 rapidly expands due to the heat of the plasma P, generating a jet stream through the ejection port 22a. The filler particles Fp are accelerated by this jet stream and ejected from the plasma plating nozzle through the ejection port 22a. Furthermore, the heat of the plasma P melts the filler particles Fp, which are then ejected from the plasma plating nozzle.
電漿噴鍍噴嘴之具體構成只要是產生電漿,以該電漿之熱使填充材料粒子Fp加速,並且使填充材料粒子Fp熔化者,則不限定於本實施形態。一種實施形態係電漿噴鍍噴嘴亦可以藉由微波產生電漿之方式而構成。The specific configuration of the plasma spray nozzle is not limited to this embodiment as long as it generates plasma and accelerates the filler particles Fp using the heat of the plasma to melt the filler particles Fp. In one embodiment, the plasma spray nozzle may also be configured to generate plasma using microwaves.
電漿噴鍍噴嘴係以其噴射口22a與積層基板Ws之間隙G相對的方式來配置。一種實施形態係從電漿噴鍍噴嘴之噴射口22a至積層基板Ws的邊緣部最外端之距離K為1mm~100mm的範圍內。藉由電漿P加速,熔化後之填充材料粒子Fp從噴射口22a朝向積層基板Ws之間隙G噴射,而碰撞積層基板Ws(更具體而言,係形成間隙G之第一基板W1的邊緣部E1及第二基板W2之邊緣部E2)。填充材料粒子Fp藉由碰撞積層基板Ws而變形,並被積層基板Ws表面冷卻,而在積層基板Ws上形成被膜。電漿噴鍍噴嘴將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,藉由使填充材料粒子Fp之被膜堆積,從而以填滿間隙G之方式形成填充層L。The plasma plating nozzle is positioned so that its nozzle 22a faces the gap G between the laminate substrates Ws. In one embodiment, the distance K between the nozzle 22a and the outermost edge of the laminate substrate Ws is within a range of 1 mm to 100 mm. Accelerated by the plasma P, melted filler material particles Fp are ejected from the nozzle 22a toward the gap G between the laminate substrates Ws, impacting the laminate substrates Ws (more specifically, the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2, which form the gap G). Filler particles Fp are deformed by colliding with the laminate substrate Ws and are cooled by the surface of the laminate substrate Ws, forming a film on the laminate substrate Ws. A plasma spray nozzle sprays filler particles Fp onto the gap G of the laminate substrate Ws, accumulating the film of filler particles Fp to form a filling layer L that fills the gap G.
採用本實施形態時,因為藉由使填充材料粒子Fp加速,並將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,從而在間隙G形成填充層L,所以之後不需要硬化工序。因此,可提高整個程序之生產性。再者,因為不需要用於硬化工序之裝置,可削減設置及維修成本。In this embodiment, by accelerating the filler particles Fp and spraying them onto the gap G of the laminated substrate Ws, a filling layer L is formed in the gap G. This eliminates the need for a subsequent curing step. This improves overall process productivity. Furthermore, since no equipment is required for the curing step, installation and maintenance costs can be reduced.
圖5係顯示噴射噴嘴3之其他實施形態的示意圖。本實施形態之噴射噴嘴3係火焰噴鍍噴嘴。火焰噴鍍噴嘴係以燃燒火焰之熱使填充材料粒子Fp加速,並且使填充材料粒子Fp熔化之方式而構成。火焰噴鍍噴嘴連結至用於將用於使燃燒火焰產生之燃料供給至火焰噴鍍噴嘴的燃料供給管線30;及用於將助燃性氣體供給至火焰噴鍍噴嘴的助燃性氣體供給管線31。Figure 5 is a schematic diagram showing another embodiment of the spray nozzle 3. The spray nozzle 3 of this embodiment is a flame plating nozzle. The flame plating nozzle is configured so that the heat of a combustion flame accelerates and melts filler material particles Fp. The flame plating nozzle is connected to a fuel supply line 30 for supplying fuel used to generate the combustion flame to the flame plating nozzle, and a combustion-supporting gas supply line 31 for supplying combustion-supporting gas to the flame plating nozzle.
燃料供給管線30連結至無圖示之燃料供給源。燃料(燃料氣體)從燃料供給源通過燃料供給管線30供給至火焰噴鍍噴嘴。燃料之例可舉出乙炔等。助燃性氣體供給管線31連結至無圖示之助燃性氣體供給源。助燃性氣體從助燃性氣體供給源通過助燃性氣體供給管線31而供給至火焰噴鍍噴嘴。助燃性氣體之例可舉出氧等。The fuel supply line 30 is connected to a fuel supply source (not shown). Fuel (fuel gas) is supplied from the fuel supply source to the flame plating nozzle through the fuel supply line 30. Examples of the fuel include acetylene. The combustion-supporting gas supply line 31 is connected to a combustion-supporting gas supply source (not shown). Combustion-supporting gas is supplied from the combustion-supporting gas supply source to the flame plating nozzle through the combustion-supporting gas supply line 31. Examples of the combustion-supporting gas include oxygen.
火焰噴鍍噴嘴具備:具有概略圓筒形狀之噴嘴本體33;連通至燃料供給管線30之燃料流路34;連通至助燃性氣體供給管線31之助燃性氣體流路35;及連通至燃料流路34與助燃性氣體流路35之燃燒室36。噴嘴本體33在其前端具有用於噴出填充材料粒子Fp之噴射口33a。燃料流路34、助燃性氣體流路35、及燃燒室36藉由噴嘴本體33之內面而形成。燃燒室36延伸至噴射口33a。The flame plating nozzle comprises a roughly cylindrical nozzle body 33; a fuel flow path 34 connected to the fuel supply line 30; a combustion-supporting gas flow path 35 connected to the combustion-supporting gas supply line 31; and a combustion chamber 36 connected to both the fuel flow path 34 and the combustion-supporting gas flow path 35. The nozzle body 33 has an injection port 33a at its front end for ejecting filler particles Fp. The fuel flow path 34, the combustion-supporting gas flow path 35, and the combustion chamber 36 are formed by the inner surface of the nozzle body 33. The combustion chamber 36 extends to the injection port 33a.
通過燃料供給管線30供給至火焰噴鍍噴嘴之燃料流經燃料流路34而供給至燃燒室36。通過助燃性氣體供給管線31供給至火焰噴鍍噴嘴之助燃性氣體流經助燃性氣體流路35而供給至燃燒室36。燃料與助燃性氣體在燃燒室36內混合,藉由使該混合氣體燃燒而生成燃燒火焰Q。The fuel supplied to the flame plating nozzle via the fuel supply line 30 flows through the fuel flow path 34 and is supplied to the combustion chamber 36. The combustion-supporting gas supplied to the flame plating nozzle via the combustion-supporting gas supply line 31 flows through the combustion-supporting gas flow path 35 and is supplied to the combustion chamber 36. The fuel and the combustion-supporting gas are mixed in the combustion chamber 36, and the mixed gas is combusted to generate a combustion flame Q.
火焰噴鍍噴嘴進一步具備連結至填充材料粒子供給管線12之填充材料粒子導入管線38。本實施形態之填充材料粒子導入管線38在噴嘴本體33之下部貫穿噴嘴本體33,並對噴嘴本體33之長度方向垂直地延伸。填充材料粒子導入管線38連通至燃燒室36,填充材料粒子導入管線38之出口端部鄰接於噴射口33a。The flame plating nozzle further includes a filler particle introduction line 38 connected to the filler particle supply line 12. In this embodiment, the filler particle introduction line 38 penetrates the nozzle body 33 at its lower portion and extends perpendicularly to the length of the nozzle body 33. The filler particle introduction line 38 is connected to the combustion chamber 36, and the outlet end of the filler particle introduction line 38 is adjacent to the injection port 33a.
載體氣及填充材料粒子Fp通過填充材料粒子供給管線12及填充材料粒子導入管線38,而供給至燃燒室36的燃燒火焰Q。填充材料粒子導入管線38之構成,只要是可在燃燒室36之燃燒火焰Q中供給填充材料粒子Fp者,則不限定於本實施形態。例如,火焰噴鍍噴嘴亦可具備複數個填充材料粒子導入管線38。其他例係填充材料粒子導入管線38亦可對噴嘴本體33之長度方向傾斜延伸,或是,填充材料粒子導入管線38亦可在噴嘴本體33之長度方向延伸。The carrier gas and filler particles Fp are supplied to the combustion flame Q in the combustion chamber 36 via the filler particle supply line 12 and the filler particle introduction line 38. The configuration of the filler particle introduction line 38 is not limited to that of this embodiment, as long as it can supply the filler particles Fp to the combustion flame Q in the combustion chamber 36. For example, a flame plating nozzle may include multiple filler particle introduction lines 38. Alternatively, the filler particle introduction line 38 may extend obliquely with respect to the longitudinal direction of the nozzle body 33, or the filler particle introduction line 38 may extend in the longitudinal direction of the nozzle body 33.
通過填充材料粒子導入管線38供給至燃燒火焰Q之載體氣藉由燃燒火焰Q之熱急速膨脹,並通過噴射口33a產生吹出噴流。填充材料粒子Fp藉由該噴流加速,並通過噴射口33a從火焰噴鍍噴嘴噴射。此外,填充材料粒子Fp藉由燃燒火焰Q之熱而熔化,熔化後之填充材料粒子Fp從火焰噴鍍噴嘴噴射。The carrier gas supplied to the combustion flame Q through the filler particle introduction line 38 rapidly expands due to the heat of the combustion flame Q, generating a blowout jet through the nozzle 33a. The filler particles Fp are accelerated by this jet and ejected from the flame plating nozzle through the nozzle 33a. Furthermore, the filler particles Fp are melted by the heat of the combustion flame Q, and the melted filler particles Fp are ejected from the flame plating nozzle.
火焰噴鍍噴嘴之具體構成,只要是可使燃燒火焰產生,以該燃燒火焰之熱使填充材料粒子Fp加速,並且使填充材料粒子Fp熔化者,則不限定於本實施形態。The specific structure of the flame plating nozzle is not limited to that of the present embodiment as long as it can generate a combustion flame, accelerate the filler particles Fp with the heat of the combustion flame, and melt the filler particles Fp.
火焰噴鍍噴嘴係以其噴射口33a與積層基板Ws之間隙G相對的方式來配置。一種實施形態係從火焰噴鍍噴嘴之噴射口33a至積層基板Ws的邊緣部最外端之距離K為1mm~100mm之範圍內。藉由燃燒火焰Q加速並熔化之填充材料粒子Fp從噴射口33a朝向積層基板Ws之間隙G噴射,而碰撞積層基板Ws(更具體而言,係形成間隙G之第一基板W1的邊緣部E1及第二基板W2之邊緣部E2)。填充材料粒子Fp藉由碰撞積層基板Ws而變形,並被積層基板Ws表面冷卻,而在積層基板Ws上形成被膜。火焰噴鍍噴嘴將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,藉由使填充材料粒子Fp之被膜堆積,從而以填滿間隙G之方式形成填充層L。The flame plating nozzle is positioned so that its nozzle opening 33a faces the gap G between the laminated substrates Ws. In one embodiment, the distance K between the nozzle opening 33a and the outermost edge of the laminated substrate Ws is within a range of 1 mm to 100 mm. Filler material particles Fp, accelerated and melted by the combustion flame Q, are ejected from the nozzle opening 33a toward the gap G between the laminated substrates Ws, impacting the laminated substrates Ws (more specifically, the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2, which form the gap G). Filler particles Fp are deformed by colliding with the laminate substrate Ws and are cooled by the surface of the laminate substrate Ws, forming a film on the laminate substrate Ws. The flame spray nozzle sprays filler particles Fp onto the gap G of the laminate substrate Ws, causing the film of filler particles Fp to accumulate, thereby forming a filling layer L that fills the gap G.
圖6係顯示噴射噴嘴3之又其他實施形態的示意圖。本實施形態之噴射噴嘴3係拉瓦爾噴嘴。拉瓦爾噴嘴係以使填充材料粒子Fp加速至音速以上之方式而構成。拉瓦爾噴嘴具備噴嘴本體40,其具有局部縮小其直徑之縮徑部40a,且具有藉由噴嘴本體40之內面所形成的流路41。流路41連通至填充材料粒子供給管線12。流路41藉由縮徑部40a形成,且具有噴嘴本體40之水平剖面積成為最小的喉部41a。噴嘴本體40在其前端具有用於噴出填充材料粒子Fp之噴射口40b。FIG6 is a schematic diagram showing yet another embodiment of the injection nozzle 3. The injection nozzle 3 of this embodiment is a Laval nozzle. The Laval nozzle is constructed in such a way as to accelerate the filler material particles Fp to a speed above the speed of sound. The Laval nozzle has a nozzle body 40 having a constricted portion 40a that partially reduces its diameter, and a flow path 41 formed by the inner surface of the nozzle body 40. The flow path 41 is connected to the filler material particle supply pipeline 12. The flow path 41 is formed by the constricted portion 40a and has a throat 41a in which the horizontal cross-section of the nozzle body 40 is minimized. The nozzle body 40 has a nozzle 40b at its front end for ejecting the filler material particles Fp.
通過填充材料粒子供給管線12供給至拉瓦爾噴嘴之載體氣及填充材料粒子Fp流經流路41。載體氣在流路41之喉部41a中被壓縮。在載體氣及填充材料粒子Fp之流動方向,於喉部41a之下游側,藉由載體氣膨脹,載體氣及填充材料粒子Fp之流速達到音速以上(音速或超音速)。加速至音速以上之填充材料粒子Fp通過噴射口40b並從拉瓦爾噴嘴噴射。The carrier gas and filler particles Fp supplied to the Laval nozzle via the filler particle supply line 12 flow through the flow path 41. The carrier gas is compressed in the throat 41a of the flow path 41. Downstream of the throat 41a, the carrier gas expands, causing the flow velocity of the carrier gas and filler particles Fp to exceed the speed of sound (sonic or supersonic). Filler particles Fp, accelerated to above the speed of sound, pass through the ejection port 40b and are ejected from the Laval nozzle.
本實施形態之拉瓦爾噴嘴連結至用於在拉瓦爾噴嘴中供給加熱氣體的加熱氣體供給管線45。加熱氣體供給管線45連結至加熱器46。加熱器46係以將從載體氣供給源16通過載體氣供給管線47而供給之載體氣加熱的方式而構成。一種實施形態係藉由加熱器46所加熱之載體氣(亦即,加熱氣體)的溫度是在100℃~2000℃之範圍內。The Laval nozzle of this embodiment is connected to a heating gas supply line 45 for supplying heating gas to the Laval nozzle. Heating gas supply line 45 is connected to a heater 46. Heater 46 is configured to heat carrier gas supplied from carrier gas supply source 16 via carrier gas supply line 47. In one embodiment, the temperature of the carrier gas (i.e., heating gas) heated by heater 46 is within a range of 100°C to 2000°C.
載體氣供給管線47中安裝有流量調整閥48及流量計49。流量調整閥48係以調節流經載體氣供給管線47之載體氣流量的方式而構成。載體氣供給管線47經由加熱器46連通至加熱氣體供給管線45。因此,流經加熱氣體供給管線45之載體氣及填充材料粒子Fp的流量可藉由流量調整閥48來調節。流量計49係以量測流經載體氣供給管線47之載體氣流量的方式而構成。一種實施形態係流量調整閥48及流量計49亦可安裝於加熱氣體供給管線45。A flow regulating valve 48 and a flow meter 49 are installed in the carrier gas supply line 47. The flow regulating valve 48 is configured to regulate the flow of carrier gas flowing through the carrier gas supply line 47. The carrier gas supply line 47 is connected to the heated gas supply line 45 via the heater 46. Therefore, the flow of carrier gas and filler particles Fp flowing through the heated gas supply line 45 can be regulated by the flow regulating valve 48. The flow meter 49 is configured to measure the flow of carrier gas flowing through the carrier gas supply line 47. In one embodiment, the flow regulating valve 48 and the flow meter 49 may also be installed in the heated gas supply line 45.
流量調整閥48及流量計49電性連接於動作控制部10。流量調整閥48之動作藉由動作控制部10控制。藉由流量計49所量測之流經載體氣供給管線47的載體氣流量送至動作控制部10。The flow regulating valve 48 and the flow meter 49 are electrically connected to the motion control unit 10. The motion of the flow regulating valve 48 is controlled by the motion control unit 10. The carrier gas flow rate flowing through the carrier gas supply line 47 measured by the flow meter 49 is sent to the motion control unit 10.
藉由加熱器46加熱後之載體氣(以下,稱加熱氣體)通過加熱氣體供給管線45供給至拉瓦爾噴嘴。拉瓦爾噴嘴進一步具備連結至加熱氣體供給管線45之加熱氣體導入管線43。本實施形態係加熱氣體導入管線43在載體氣及填充材料粒子Fp之流動方向,於縮徑部40a之上游側連結至噴嘴本體40,並連通於流路41。供給至流路41之加熱氣體藉由其熱使流經流路41之填充材料粒子Fp加溫。加溫後之填充材料粒子Fp以流路41加速至音速以上,並通過噴射口40b從拉瓦爾噴嘴噴射。The carrier gas (hereinafter referred to as heated gas) heated by a heater 46 is supplied to the Laval nozzle via a heated gas supply line 45. The Laval nozzle further includes a heated gas inlet line 43 connected to the heated gas supply line 45. In this embodiment, the heated gas inlet line 43 is connected to the nozzle body 40 upstream of the constricted portion 40a in the direction of flow of the carrier gas and filler particles Fp and communicates with the flow path 41. The heated gas supplied to the flow path 41 heats the filler particles Fp flowing through the flow path 41. The heated filler particles Fp are accelerated to a speed exceeding the speed of sound in the flow path 41 and ejected from the Laval nozzle through the ejection port 40b.
拉瓦爾噴嘴係以其噴射口40b與積層基板Ws之間隙G相對的方式配置。一種實施形態係從拉瓦爾噴嘴之噴射口40b至積層基板Ws的邊緣部最外端之距離K是1mm~100mm之範圍內。藉由拉瓦爾噴嘴加速並加溫後之填充材料粒子Fp從噴射口40b朝向積層基板Ws之間隙G噴射,而碰撞積層基板Ws(更具體而言,係形成間隙G之第一基板W1的邊緣部E1及第二基板W2之邊緣部E2)。填充材料粒子Fp藉由碰撞積層基板Ws而變形,並被積層基板Ws表面冷卻,而在積層基板Ws上形成被膜。拉瓦爾噴嘴將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,藉由使填充材料粒子Fp之被膜堆積,從而以填滿間隙G之方式形成填充層L。The Laval nozzle is positioned so that its nozzle 40b faces the gap G between the laminate substrate Ws. In one embodiment, the distance K between the Laval nozzle nozzle 40b and the outermost edge of the laminate substrate Ws is within a range of 1 mm to 100 mm. Filler particles Fp, accelerated and heated by the Laval nozzle, are ejected from the nozzle 40b toward the gap G between the laminate substrate Ws, impacting the laminate substrate Ws (more specifically, the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2, which form the gap G). Filler particles Fp are deformed by impacting the laminate substrate Ws and cooled by the surface of the laminate substrate Ws, forming a film on the laminate substrate Ws. A Laval nozzle sprays filler particles Fp onto the gap G of the laminate substrate Ws, accumulating the film of filler particles Fp to form a filling layer L that fills the gap G.
因為藉由加熱氣體加溫並軟化之填充材料粒子Fp於碰撞積層基板Ws時容易變形,所以可使填充材料粒子Fp之被膜良好地堆積於積層基板Ws。藉由加熱氣體加溫後之填充材料粒子Fp亦可係熔化狀態,亦可係半熔化狀態。Because the filler particles Fp, heated and softened by the heated gas, are easily deformed when they collide with the laminate substrate Ws, the film of the filler particles Fp can be well deposited on the laminate substrate Ws. The filler particles Fp heated by the heated gas can be in a molten state or a semi-molten state.
一種實施形態係從拉瓦爾噴嘴噴射之填充材料粒子Fp的速度足夠快時(例如,填充材料粒子Fp之速度為500m/秒以上時),拉瓦爾噴嘴亦可不具備加熱氣體導入管線43,而不在拉瓦爾噴嘴內供給加熱氣體。此因,從拉瓦爾噴嘴噴射之填充材料粒子Fp的速度足夠快時,即使填充材料粒子Fp未被加溫、軟化,仍可藉由對積層基板Ws碰撞而變形,並在積層基板Ws上形成被膜。In one embodiment, when the speed of the filler material particles Fp ejected from the Laval nozzle is sufficiently high (for example, when the speed of the filler material particles Fp is 500 m/s or higher), the Laval nozzle may not be equipped with a heating gas inlet line 43, and heating gas is not supplied to the Laval nozzle. Therefore, when the speed of the filler material particles Fp ejected from the Laval nozzle is sufficiently high, even if the filler material particles Fp are not heated or softened, they can still be deformed by impact with the laminate substrate Ws, thereby forming a film on the laminate substrate Ws.
圖7係顯示基板處理裝置1之其他實施形態的側視圖。由於不特別說明之本實施形態的構成及動作,與參照圖2及圖3所說明之基板處理裝置1的構成及動作相同,因此省略其重複之說明。本實施形態之噴射噴嘴3係參照圖6所說明之拉瓦爾噴嘴。本實施形態係填充材料粒子供給管線12取代填充材料粒子供給源13而連結至使身為填充材料粒子Fp之材料的填充材料Fm氣化的氣化室51。氣化室51經由載體氣供給管線15而連結至載體氣供給源16。載體氣從載體氣供給源16通過載體氣供給管線15而供給至氣化室51時,氣化室51之內部被指定壓力之載體氣填滿。載體氣之例可舉出氮、空氣、氦、氬等氣體,或此等之混合氣體。FIG7 is a side view showing another embodiment of the substrate processing apparatus 1. Since the structure and operation of this embodiment, which are not specifically described, are the same as those of the substrate processing apparatus 1 described with reference to FIG2 and FIG3 , repeated descriptions thereof are omitted. The spray nozzle 3 of this embodiment is a Laval nozzle described with reference to FIG6 . In this embodiment, the filling material particle supply line 12 replaces the filling material particle supply source 13 and is connected to a vaporization chamber 51 for vaporizing the filling material Fm, which is the material of the filling material particles Fp. The vaporization chamber 51 is connected to the carrier gas supply source 16 via the carrier gas supply line 15. When carrier gas is supplied from carrier gas supply source 16 through carrier gas supply line 15 to vaporization chamber 51, the interior of vaporization chamber 51 is filled with carrier gas at a predetermined pressure. Examples of carrier gas include nitrogen, air, helium, argon, and other gases, or mixed gases thereof.
本實施形態之氣化室51於其內部具備作為熱源之加熱器53。加熱器53中裝載身為填充材料粒子Fp之材料的填充材料Fm。氣化室51係以在載體氣環境中,藉由加熱器53之熱使填充材料Fm氣化的方式而構成。氣化後之填充材料Fm到達積層基板Ws前形成具有奈米尺寸之直徑的填充材料粒子Fp。The vaporization chamber 51 of this embodiment includes a heater 53 as a heat source. Filler material Fm, which is the material of filler particles Fp, is loaded into the heater 53. The vaporization chamber 51 is configured so that the heat from the heater 53 vaporizes the filler material Fm in a carrier gas environment. The vaporized filler material Fm forms filler particles Fp with nanometer-sized diameters before reaching the laminated substrate Ws.
氣化室51之具體構成不限定於本實施形態,只要可使填充材料Fm氣化即可。一種實施形態係氣化室51亦可以藉由雷射消融(laser ablation)而使填充材料Fm氣化的方式而構成。The specific structure of the vaporization chamber 51 is not limited to this embodiment, as long as it can vaporize the filling material Fm. In one embodiment, the vaporization chamber 51 can also be configured in such a way that the filling material Fm is vaporized by laser ablation.
本實施形態係保持積層基板Ws之基板保持裝置2及噴射噴嘴3收容於真空室55內。真空室55經由真空管線56而連結至真空泵浦58。真空泵浦58係以通過真空管線56將真空室55排氣,而在真空室55內形成真空狀態之方式構成。真空泵浦58電性連接至動作控制部10,真空泵浦58之動作藉由動作控制部10來控制。In this embodiment, the substrate holding device 2 and the spray nozzle 3 holding the laminated substrate Ws are housed within a vacuum chamber 55. The vacuum chamber 55 is connected to a vacuum pump 58 via a vacuum line 56. The vacuum pump 58 is configured to evacuate the vacuum chamber 55 via the vacuum line 56, thereby creating a vacuum state within the vacuum chamber 55. The vacuum pump 58 is electrically connected to the operation control unit 10, and the operation of the vacuum pump 58 is controlled by the operation control unit 10.
藉由氣化室51與真空室55之壓力差,氣化之填充材料Fm或從氣化之填充材料Fm所形成的填充材料粒子Fp與載體氣一起從真空室55流入填充材料粒子供給管線12。氣化之填充材料Fm或從氣化之填充材料Fm所形成的填充材料粒子Fp與載體氣一起從填充材料粒子供給管線12供給至噴射噴嘴3(本實施形態係拉瓦爾噴嘴)。噴射噴嘴3(本實施形態係拉瓦爾噴嘴)使氣化之填充材料Fm或從氣化之填充材料Fm所形成的填充材料粒子Fp加速至音速以上。Due to the pressure difference between the vaporization chamber 51 and the vacuum chamber 55, the vaporized filler material Fm or the filler material particles Fp formed from the vaporized filler material Fm flow from the vacuum chamber 55 into the filler material particle supply line 12 along with the carrier gas. The vaporized filler material Fm or the filler material particles Fp formed from the vaporized filler material Fm are supplied from the filler material particle supply line 12 along with the carrier gas to the injection nozzle 3 (a Laval nozzle in this embodiment). The injection nozzle 3 (a Laval nozzle in this embodiment) accelerates the vaporized filler material Fm or the filler material particles Fp formed from the vaporized filler material Fm to a speed exceeding the speed of sound.
藉由噴射噴嘴3(本實施形態係拉瓦爾噴嘴)而加速之填充材料粒子Fp從拉瓦爾噴嘴朝向積層基板Ws的間隙G噴射,而碰撞積層基板Ws(更具體而言,係形成間隙G之第一基板W1的邊緣部E1及第二基板W2之邊緣部E2)。具有奈米尺寸直徑之填充材料粒子Fp碰撞積層基板Ws可在積層基板Ws上形成緻密之被膜。藉由拉瓦爾噴嘴將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,並使填充材料粒子Fp之被膜堆積,從而以填滿間隙G之方式形成填充層L。Filler particles Fp, accelerated by the spray nozzle 3 (a Laval nozzle in this embodiment), are ejected from the Laval nozzle toward the gap G of the stacking substrate Ws, impacting the stacking substrate Ws (more specifically, the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2, which form the gap G). The nanometer-sized filler particles Fp collide with the stacking substrate Ws, forming a dense film on the stacking substrate Ws. The Laval nozzle sprays the filler particles Fp onto the gap G of the stacking substrate Ws, causing the film of filler particles Fp to accumulate, thereby filling the gap G and forming a filling layer L.
本實施形態係在形成了真空狀態之真空室55內進行藉由噴射噴嘴3對積層基板Ws之間隙G形成填充材料層L。藉此,形成填充材料層L時可使氣泡之產生降低。一種實施形態係亦可在真空室55內進行使用參照圖2至圖4所說明之電漿噴鍍噴嘴對積層基板Ws之間隙G形成填充材料層L。In this embodiment, the filling material layer L is formed on the gap G of the laminate substrate Ws using the spray nozzle 3 within a vacuum chamber 55, which is in a vacuum state. This reduces the generation of bubbles during the formation of the filling material layer L. Alternatively, the filling material layer L can be formed on the gap G of the laminate substrate Ws within the vacuum chamber 55 using the plasma plating nozzle described with reference to Figures 2 to 4 .
圖8係顯示基板處理裝置1之又其他實施形態的側視圖。由於不特別說明之本實施形態的構成及動作,與參照圖2及圖3所說明之基板處理裝置1的構成及動作相同,因此省略其重複之說明。本實施形態之噴射噴嘴3係參照圖4而說明的電漿噴鍍噴嘴。本實施形態之填充材料粒子供給管線12係取代填充材料粒子供給源13,而連結至生成含有填充材料粒子Fp之懸濁液Fs的懸濁液生成裝置60。懸濁液生成裝置60係以使填充材料粒子Fp分散於液體(例如,水、乙醇等),而生成含有填充材料粒子Fp之懸濁液(漿液)Fs的方式而構成。FIG8 is a side view showing yet another embodiment of the substrate processing apparatus 1. Since the structure and operation of this embodiment, which are not specifically described, are the same as those of the substrate processing apparatus 1 described with reference to FIG2 and FIG3 , repeated descriptions thereof are omitted. The spray nozzle 3 of this embodiment is the plasma plating nozzle described with reference to FIG4 . The filling material particle supply line 12 of this embodiment replaces the filling material particle supply source 13 and is connected to a suspension generating device 60 for generating a suspension Fs containing the filling material particles Fp. The suspension generating device 60 is configured so as to disperse the filling material particles Fp in a liquid (e.g., water, ethanol, etc.) to generate a suspension (slurry) Fs containing the filling material particles Fp.
在填充材料粒子供給管線12中安裝有懸濁液泵浦61。懸濁液泵浦61係以將含有填充材料粒子Fp之懸濁液Fs從懸濁液生成裝置60通過填充材料粒子供給管線12而壓送至噴射噴嘴3(本實施形態係電漿噴鍍噴嘴)之方式而構成。懸濁液泵浦61電性連接於動作控制部10,懸濁液泵浦61之動作藉由動作控制部10來控制。A suspension pump 61 is installed in the filler particle supply line 12. The suspension pump 61 is configured to pressurize a suspension Fs containing filler particles Fp from the suspension generator 60 through the filler particle supply line 12 to the spray nozzle 3 (a plasma plating nozzle in this embodiment). The suspension pump 61 is electrically connected to the operation control unit 10, and its operation is controlled by the operation control unit 10.
噴射噴嘴3(本實施形態係電漿噴鍍噴嘴)以電漿之熱使含有填充材料粒子Fp之懸濁液Fs加速。含有藉由噴射噴嘴3而加速之填充材料粒子Fp的懸濁液Fs從噴射噴嘴3朝向積層基板Ws之間隙G噴射。噴射噴嘴3將含有填充材料粒子Fp之懸濁液Fs噴吹在積層基板Ws之間隙G(更具體而言,係形成間隙G之第一基板W1的邊緣部E1及第二基板W2之邊緣部E2)上。含有填充材料粒子Fp之懸濁液Fs在與積層基板Ws碰撞前,或碰撞之後,從懸濁液Fs中揮發液體成分,而形成填充材料粒子Fp之被膜。噴射噴嘴3藉由將含有填充材料粒子Fp之懸濁液Fs噴吹在積層基板Ws之間隙G上,並使填充材料粒子Fp之被膜堆積,從而以填滿間隙G之方式而形成填充層L。The spray nozzle 3 (a plasma plating nozzle in this embodiment) uses the heat of the plasma to accelerate a suspension Fs containing filler particles Fp. The suspension Fs containing filler particles Fp, accelerated by the spray nozzle 3, is sprayed from the spray nozzle 3 toward the gap G of the build-up substrate Ws. The spray nozzle 3 sprays the suspension Fs containing filler particles Fp onto the gap G of the build-up substrate Ws (more specifically, onto the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2, which form the gap G). Before or after the suspension Fs containing filler particles Fp collides with the build-up substrate Ws, liquid components evaporate from the suspension Fs, forming a film of filler particles Fp. The spray nozzle 3 sprays the suspension Fs containing filler particles Fp onto the gap G of the build-up substrate Ws, depositing the film of filler particles Fp to fill the gap G and form a filling layer L.
圖9係顯示基板處理裝置1之又其他實施形態的側視圖。由於不特別說明之本實施形態的構成及動作,與參照圖7所說明之實施形態相同,因此省略其重複之說明。本實施形態之填充材料粒子供給管線12係取代氣化室51而連結至使填充材料粒子Fp氣溶膠化之氣溶膠室65。氣溶膠室65經由載體氣供給管線15而連結至載體氣供給源16。氣溶膠室65係以使從載體氣供給源16通過載體氣供給管線15而供給至氣溶膠室65內之載體氣與填充材料粒子Fp混合,而生成氣溶膠化之填充材料粒子Fp的方式而構成。FIG9 is a side view showing yet another embodiment of the substrate processing apparatus 1. Since the structure and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIG7 , repeated descriptions thereof are omitted. The filling material particle supply line 12 of this embodiment replaces the vaporization chamber 51 and is connected to an aerosol chamber 65 for aerosolizing the filling material particles Fp. The aerosol chamber 65 is connected to the carrier gas supply source 16 via the carrier gas supply line 15. The aerosol chamber 65 is configured so that the carrier gas supplied from the carrier gas supply source 16 through the carrier gas supply line 15 into the aerosol chamber 65 is mixed with the filling material particles Fp to generate aerosolized filling material particles Fp.
本實施形態係保持積層基板Ws之基板保持裝置2及噴射噴嘴3收容於真空室55內,真空室55內保持真空狀態。藉由氣溶膠室65與真空室55之壓力差,氣溶膠化之填充材料粒子Fp與載體氣一起從氣溶膠室65流入填充材料粒子供給管線12。氣溶膠化之填充材料粒子Fp與載體氣一起通過填充材料粒子供給管線12而供給至噴射噴嘴3(本實施形態係拉瓦爾噴嘴)。噴射噴嘴3(本實施形態係拉瓦爾噴嘴)使氣溶膠化之填充材料粒子Fp加速至音速以上。In this embodiment, the substrate holder 2, which holds the laminated substrate Ws, and the spray nozzle 3 are housed within a vacuum chamber 55, which is maintained in a vacuum state. Due to the pressure difference between the aerosol chamber 65 and the vacuum chamber 55, aerosolized filler particles Fp flow from the aerosol chamber 65 into the filler particle supply line 12 along with a carrier gas. The aerosolized filler particles Fp, along with the carrier gas, are supplied through the filler particle supply line 12 to the spray nozzle 3 (a Laval nozzle in this embodiment). The spray nozzle 3 (a Laval nozzle in this embodiment) accelerates the aerosolized filler particles Fp to a speed exceeding the speed of sound.
藉由噴射噴嘴3(本實施形態係拉瓦爾噴嘴)而加速之氣溶膠化填充材料粒子Fp從噴射噴嘴3朝向積層基板Ws之間隙G噴射,而碰撞積層基板Ws(更具體而言,係形成間隙G之第一基板W1的邊緣部E1及第二基板W2之邊緣部E2)。氣溶膠化之填充材料粒子Fp碰撞積層基板Ws可在積層基板Ws上形成緻密之被膜。噴射噴嘴3藉由將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,並使填充材料粒子Fp之被膜堆積,從而以填滿間隙G之方式而形成填充層L。Aerosolized filler particles Fp, accelerated by the spray nozzle 3 (a Laval nozzle in this embodiment), are sprayed from the spray nozzle 3 toward the gap G between the stacking substrates Ws, where they collide with the stacking substrates Ws (more specifically, the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2, which form the gap G). The collision of the aerosolized filler particles Fp with the stacking substrates Ws forms a dense coating on the stacking substrates Ws. The spray nozzle 3 sprays the filler particles Fp onto the gap G between the stacking substrates Ws, accumulating the coating of filler particles Fp and thereby filling the gap G to form a filling layer L.
參照上述圖5至圖9所說明之任何一種實施形態中,因為藉由使填充材料粒子Fp加速,並將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,從而在間隙G4形成填充層L,所以之後不需要硬化工序。因此,可提高整個程序之生產性。再者,因為不需要用於硬化工序之裝置,所以可削減設置及維修成本。In any of the embodiments described above with reference to Figures 5 to 9 , since the filler material particles Fp are accelerated and sprayed onto the gap G of the laminated substrate Ws, thereby forming the filler layer L in the gap G4, a subsequent curing step is unnecessary. This improves the productivity of the entire process. Furthermore, since no equipment is required for the curing step, installation and maintenance costs can be reduced.
圖10係顯示基板處理裝置1之又其他實施形態的側視圖。由於不特別說明之本實施形態的構成及動作,與參照圖2至圖4所說明之實施形態相同,因此省略其重複之說明。圖10所示之基板處理裝置1進一步具備使積層基板Ws以指定之搖動中心為中心而搖動的搖動機構(基板搖動機構)70。本實施形態之噴射噴嘴3係參照圖4而說明之電漿噴鍍噴嘴,不過,一種實施形態係亦可係參照圖5而說明之火焰噴鍍噴嘴,或是參照圖6而說明之拉瓦爾噴嘴。此外,本實施形態之基板搖動機構70亦可適用於參照圖7至圖9而說明之任何一種基板處理裝置1。FIG10 is a side view showing yet another embodiment of the substrate processing apparatus 1. Since the structure and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIG2 through FIG4 , a repeated description thereof will be omitted. The substrate processing apparatus 1 shown in FIG10 further includes a rocking mechanism (substrate rocking mechanism) 70 that rocked the laminated substrate Ws about a predetermined rocking center. The spray nozzle 3 of this embodiment is the plasma plating nozzle described with reference to FIG4 , but one embodiment may also be the flame plating nozzle described with reference to FIG5 , or the Laval nozzle described with reference to FIG6 . In addition, the substrate rocking mechanism 70 of this embodiment can also be applied to any substrate processing apparatus 1 described with reference to FIG. 7 to FIG. 9 .
基板搖動機構70具備:連結至基板保持裝置2之搖動臂72;連結至搖動臂72之搖動軸73;及連結至搖動軸73之馬達74。馬達74係以將搖動軸73之軸心作為中心而使搖動軸73旋轉的方式構成。馬達74係以使搖動軸73旋轉,並經由搖動臂72使整個基板保持裝置2搖動,而使保持於基板保持裝置2之積層基板Ws以搖動中心O(亦即,搖動軸73之軸心)為中心而搖動的方式構成。The substrate oscillation mechanism 70 includes a oscillation arm 72 connected to the substrate holding device 2; a oscillation shaft 73 connected to the oscillation arm 72; and a motor 74 connected to the oscillation shaft 73. The motor 74 is configured to rotate the oscillation shaft 73 about its axis. The motor 74 rotates the oscillation shaft 73, oscillating the entire substrate holding device 2 via the oscillation arm 72. This causes the laminated substrate Ws held by the substrate holding device 2 to oscillate about the oscillation center O (i.e., the axis of the oscillation shaft 73).
基板搖動機構70使積層基板Ws以搖動中心O為中心而搖動,並將積層基板Ws對噴射噴嘴3噴射填充材料粒子Fp之噴射方向J以指定角度傾斜。換言之,基板搖動機構70係以變更噴射噴嘴3噴射填充材料粒子Fp之噴射方向J與積層基板Ws的半徑方向之相對角度的方式而構成。基板搖動機構70係以維持積層基板Ws之傾斜角度的方式而構成。基板搖動機構70(更具體而言係馬達74)電性連接於動作控制部10,基板搖動機構70(更具體而言係馬達74)之動作藉由動作控制部10來控制。The substrate oscillating mechanism 70 oscillates the stacking substrate Ws about the oscillation center O, tilting the stacking substrate Ws at a predetermined angle relative to the spray direction J of the filler particles Fp ejected by the ejection nozzle 3. In other words, the substrate oscillating mechanism 70 is configured to change the relative angle between the ejection direction J of the filler particles Fp ejected by the ejection nozzle 3 and the radial direction of the stacking substrate Ws. The substrate oscillating mechanism 70 is also configured to maintain the tilt angle of the stacking substrate Ws. The substrate oscillating mechanism 70 (more specifically, the motor 74 ) is electrically connected to the motion control unit 10 , and the motion of the substrate oscillating mechanism 70 (more specifically, the motor 74 ) is controlled by the motion control unit 10 .
圖11係顯示藉由噴射噴嘴3使填充材料粒子Fp堆積在積層基板Ws間隙G之情形的示意圖。如上述,噴射噴嘴3藉由將填充材料粒子Fp噴吹在積層基板Ws之間隙G上,並使填充材料粒子Fp之被膜堆積在積層基板Ws的間隙G,從而在間隙G形成填充層L。因為碰撞積層基板Ws之填充材料粒子Fp固定在碰撞處,所以如圖11所示,填充材料粒子Fp偏差堆積在積層基板Ws之間隙G的一部分,而無法在整個間隙G形成填充層L。因此,本實施形態係藉由基板搖動機構70使積層基板Ws搖動,並使從噴射噴嘴3噴吹之填充材料粒子Fp碰撞的積層基板Ws位置變化,而在積層基板Ws之間隙G形成填充層L。FIG11 is a schematic diagram illustrating the deposition of filler particles Fp in the gap G of the stacking substrate Ws by the spray nozzle 3. As described above, the spray nozzle 3 sprays the filler particles Fp onto the gap G of the stacking substrate Ws, depositing a film of the filler particles Fp in the gap G of the stacking substrate Ws, thereby forming a filling layer L in the gap G. However, since the filler particles Fp that collide with the stacking substrate Ws are fixed at the point of collision, as shown in FIG11 , the filler particles Fp are deposited unevenly in a portion of the gap G of the stacking substrate Ws, preventing the formation of a filling layer L throughout the gap G. Therefore, in this embodiment, the substrate rocking mechanism 70 rocked the laminated substrate Ws, and the position of the laminated substrate Ws where the filler particles Fp ejected from the ejection nozzle 3 collided was changed, thereby forming the filling layer L in the gap G of the laminated substrate Ws.
本實施形態係搖動中心O之位置與積層基板Ws之間隙G的最深部分一致。搖動中心O之位置及積層基板Ws的傾斜角度係以在積層基板Ws之間隙G適切形成填充層L的方式,而依據實驗結果等預先決定。In this embodiment, the position of the rocking center O coincides with the deepest portion of the gap G of the laminate substrate Ws. The position of the rocking center O and the tilt angle of the laminate substrate Ws are predetermined based on experimental results, etc., in order to appropriately form the filling layer L in the gap G of the laminate substrate Ws.
圖12係顯示藉由基板搖動機構70使積層基板Ws搖動,並在積層基板Ws之間隙G形成填充層L的方法之一種實施形態的示意圖。圖12為了說明而省略基板搖動機構70之圖示。如圖12之步驟1-1所示,在噴射噴嘴3噴射填充材料粒子Fp之噴射方向J與積層基板Ws之半徑方向一致的狀態,亦即在不傾斜積層基板Ws之狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。例如,藉由基板保持裝置2使積層基板Ws旋轉1周期間,不傾斜積層基板Ws而藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。Figure 12 is a schematic diagram illustrating one embodiment of a method for forming a filler layer L in a gap G of a buildup substrate Ws by rocking the buildup substrate Ws using a substrate rocking mechanism 70. For illustrative purposes, Figure 12 omits the substrate rocking mechanism 70. As shown in step 1-1 of Figure 12 , the filler material particles Fp are sprayed onto the surface of the buildup substrate Ws by the spray nozzle 3, with the spray direction J of the filler material particles Fp aligned with the radial direction of the buildup substrate Ws. In other words, the buildup substrate Ws is not tilted. For example, while the laminated substrate Ws is rotated by one cycle by the substrate holding device 2, the filler particles Fp are sprayed onto the surface by the spray nozzle 3 without tilting the laminated substrate Ws.
其次,步驟1-2係藉由基板搖動機構70使積層基板Ws以搖動中心O為中心而在第一方向D1搖動,並在將積層基板Ws對噴射噴嘴3噴射填充材料粒子Fp之噴射方向J以第一角度傾斜的狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹。例如,在藉由基板保持裝置2使積層基板Ws旋轉1周期間,以第一角度傾斜積層基板Ws狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。Next, in step 1-2, the stacking substrate Ws is rocked in the first direction D1 about the rocking center O by the substrate rocking mechanism 70. The filler material particles Fp are sprayed by the spray nozzle 3 while the stacking substrate Ws is tilted at a first angle relative to the spraying direction J of the filler material particles Fp from the spray nozzle 3. For example, while the stacking substrate Ws is rotated once by the substrate holding device 2, the filler material particles Fp are sprayed onto the surface of the stacking substrate Ws while the substrate Ws is tilted at the first angle.
步驟1-3係藉由基板搖動機構70使積層基板Ws以搖動中心O為中心而在與第一方向D1相反之第二方向D2搖動,在將積層基板Ws對噴射噴嘴3噴射填充材料粒子Fp之噴射方向J以第二角度傾斜狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。例如,藉由基板保持裝置2使積層基板Ws旋轉1周期間,在以第二角度傾斜積層基板Ws狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。In step 1-3, the stacking substrate Ws is rocked about the rocking center O in a second direction D2, which is opposite to the first direction D1, by the substrate rocking mechanism 70. With the stacking substrate Ws tilted at a second angle relative to the spraying direction J of the spray nozzle 3, the filler material particles Fp are sprayed onto the surface. For example, while the stacking substrate Ws is rotated once by the substrate holding device 2, the filler material particles Fp are sprayed onto the surface by the spray nozzle 3 while the stacking substrate Ws is tilted at the second angle.
步驟1-4係藉由基板搖動機構70使積層基板Ws以搖動中心O為中心而在第一方向D1搖動,並與步驟1-1同樣地,在來自噴射噴嘴3之填充材料粒子Fp的噴射方向J與積層基板Ws之半徑方向一致狀態,亦即在不傾斜積層基板Ws狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。例如,藉由基板保持裝置2使積層基板Ws旋轉1周期間,不傾斜積層基板Ws而藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。步驟1-1~1-4亦可反覆進行直至以填滿積層基板Ws之間隙G的方式形成填充層L。In step 1-4, the stacking substrate Ws is rocked in the first direction D1 about the rocking center O by the substrate rocking mechanism 70. Similar to step 1-1, the filler material particles Fp are sprayed onto the surface of the stacking substrate Ws by the spray nozzle 3, with the spray direction J of the filler material particles Fp aligned with the radial direction of the stacking substrate Ws, that is, without tilting the stacking substrate Ws. For example, the filler material particles Fp are sprayed onto the surface of the stacking substrate Ws by the spray nozzle 3 while the stacking substrate Ws is rotated once by the substrate holding device 2, without tilting the stacking substrate Ws. Steps 1-1 to 1-4 may be repeated until the filling layer L is formed by filling the gap G of the laminate substrate Ws.
一種實施形態係在各個步驟1-1~1-4中,亦可在藉由基板保持裝置2使積層基板Ws複數次旋轉期間,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。其他實施形態係亦可在步驟1-1~1-4之後,其次反覆進行步驟1-1~1-4時,使用由與在最初之步驟1-1~1-4使用的填充材料粒子不同材料構成之填充材料粒子。藉此,將由不同材料構成之複數個填充劑層積層在積層基板Ws之間隙G。In one embodiment, during each of steps 1-1 to 1-4, filler particles Fp may be sprayed onto the surface of the laminate substrate Ws using the spray nozzle 3 while the laminate substrate Ws is rotated multiple times by the substrate holding device 2. In another embodiment, after steps 1-1 to 1-4, filler particles composed of a different material than the filler particles used in the initial steps 1-1 to 1-4 may be used in the subsequent repetition of steps 1-1 to 1-4. In this way, multiple filler layers composed of different materials are deposited in the gaps G of the laminate substrate Ws.
再者,其他實施形態亦可藉由基板搖動機構70使積層基板Ws以搖動中心O為中心而搖動,同時藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。Furthermore, in other embodiments, the substrate rocking mechanism 70 may rock the laminated substrate Ws around the rocking center O, while the spray nozzle 3 may spray the filler particles Fp onto the surface.
採用本實施形態時,藉由基板搖動機構70使積層基板Ws搖動,並使填充材料粒子Fp堆積在積層基板Ws之間隙G,填充材料粒子Fp不致偏差堆積在間隙G之一部分,而可在整個間隙G形成填充層L。When this embodiment is adopted, the substrate rocking mechanism 70 is used to rock the stacking substrate Ws, and the filling material particles Fp are deposited in the gap G of the stacking substrate Ws. The filling material particles Fp are not deposited in a part of the gap G, but can form a filling layer L in the entire gap G.
一種實施形態如圖13所示,基板處理裝置1亦可取代基板搖動機構70,而具備使噴射噴嘴3以指定之搖動中心為中心而搖動的搖動機構(噴嘴搖動機構)75。噴嘴搖動機構75具備:保持噴射噴嘴3之噴嘴固持器77;連結至噴嘴固持器77之搖動軸78;及連結至搖動軸78之馬達79。馬達79係以將搖動軸78之軸心作為中心而使搖動軸78旋轉的方式而構成。馬達79係以使搖動軸78旋轉,並使保持於噴嘴固持器77之噴射噴嘴3以搖動中心O(亦即,搖動軸78之軸心)為中心而搖動的方式而構成。In one embodiment, as shown in FIG13 , the substrate processing apparatus 1 may include a swing mechanism (nozzle swing mechanism) 75, which replaces the substrate swing mechanism 70 and swings the nozzle 3 about a designated swing center. The nozzle swing mechanism 75 includes a nozzle holder 77 that holds the nozzle 3; a swing shaft 78 connected to the nozzle holder 77; and a motor 79 connected to the swing shaft 78. The motor 79 is configured to rotate the swing shaft 78 about its axis. The motor 79 is configured to rotate the rocking shaft 78 and rock the injection nozzle 3 held by the nozzle holder 77 about the rocking center O (that is, the axis of the rocking shaft 78).
噴嘴搖動機構75使保持於噴嘴固持器77之噴射噴嘴3以搖動中心O為中心而搖動,並將噴射噴嘴3對積層基板Ws之半徑方向以指定角度傾斜。換言之,噴嘴搖動機構75係以變更噴射噴嘴3噴射填充材料粒子Fp之噴射方向J與積層基板Ws之半徑方向的相對角度之方式而構成。噴嘴搖動機構75係以維持噴射噴嘴3之傾斜角度的方式而構成。噴嘴搖動機構75(更具體而言,係馬達79)電性連接於動作控制部10,噴嘴搖動機構75(更具體而言,係馬達79)之動作藉由動作控制部10來控制。The nozzle oscillating mechanism 75 oscillates the ejection nozzle 3, held in the nozzle holder 77, about an oscillation center O, tilting the ejection nozzle 3 at a predetermined angle relative to the radial direction of the laminate substrate Ws. In other words, the nozzle oscillating mechanism 75 is configured to change the relative angle between the ejection direction J of the filler particles Fp ejected by the ejection nozzle 3 and the radial direction of the laminate substrate Ws. The nozzle oscillating mechanism 75 is configured to maintain the tilt angle of the ejection nozzle 3. The nozzle rocking mechanism 75 (more specifically, the motor 79 ) is electrically connected to the motion control unit 10 , and the motion of the nozzle rocking mechanism 75 (more specifically, the motor 79 ) is controlled by the motion control unit 10 .
搖動中心O之位置、及噴射噴嘴3之傾斜角度係以在積層基板Ws之間隙G適切形成填充層L的方式,而依據實驗結果等而預先決定。The position of the rocking center O and the tilt angle of the ejection nozzle 3 are predetermined based on experimental results, etc., in order to appropriately form the filling layer L in the gap G of the laminated substrate Ws.
即使本實施形態中,仍係藉由噴嘴搖動機構75使噴射噴嘴3以搖動中心O為中心而搖動,並藉由噴射噴嘴3使填充材料粒子Fp堆積在積層基板Ws之間隙G,可以填滿間隙G之方式使填充材料粒子Fp堆積。Even in this embodiment, the nozzle oscillating mechanism 75 is used to oscillate the spray nozzle 3 around the oscillation center O, and the spray nozzle 3 is used to deposit the filling material particles Fp in the gap G of the laminated substrate Ws, so that the filling material particles Fp can be deposited in such a manner as to fill the gap G.
圖14係顯示基板處理裝置1之又其他實施形態的側視圖。由於不特別說明之本實施形態的構成及動作,與參照圖10所說明之實施形態相同,因此省略其重複之說明。本實施形態之基板處理裝置1進一步具備使積層基板Ws在其厚度方向移動之移動機構(基板移動機構)80。本實施形態之噴射噴嘴3係參照圖4而說明之電漿噴鍍噴嘴,不過一種實施形態係亦可係參照圖5而說明之火焰噴鍍噴嘴,或是參照圖6而說明之拉瓦爾噴嘴。此外,本實施形態之基板移動機構80亦可適用於參照圖7至圖9而說明之任何一種基板處理裝置1。FIG14 is a side view showing yet another embodiment of the substrate processing apparatus 1. Since the structure and operation of this embodiment, not specifically described, are identical to those of the embodiment described with reference to FIG10 , a repeated description thereof will be omitted. The substrate processing apparatus 1 of this embodiment further includes a movement mechanism (substrate movement mechanism) 80 for moving the laminated substrate Ws in its thickness direction. The spray nozzle 3 of this embodiment is the plasma plating nozzle described with reference to FIG4 , but may alternatively be the flame plating nozzle described with reference to FIG5 , or the Laval nozzle described with reference to FIG6 . In addition, the substrate moving mechanism 80 of this embodiment can also be applied to any substrate processing apparatus 1 described with reference to FIG. 7 to FIG. 9 .
本實施形態之基板移動機構80具備:連結至基板保持裝置2之連結構件81;將連結構件81之移動方向引導至積層基板Ws的厚度方向之直線導軌82;連結至連結構件81之直動機構83;及連結至直動機構83之馬達84。直動機構83之例可舉出滾珠螺桿機構、汽缸機構等。馬達84係以經由直動機構83、直線導軌82、及連結構件81而使整個基板保持裝置2在積層基板Ws之厚度方向移動,並使保持於基板保持裝置2之積層基板Ws在其厚度方向移動之方式而構成。一種實施形態係基板移動機構80亦可取代直線導軌82、直動機構83、及馬達84而具備直動電動致動器(線性馬達等)。The substrate moving mechanism 80 of this embodiment includes a connecting member 81 connected to the substrate holding device 2; a linear guide 82 that guides the movement of the connecting member 81 in the thickness direction of the laminated substrate Ws; a direct-acting mechanism 83 connected to the connecting member 81; and a motor 84 connected to the direct-acting mechanism 83. Examples of the direct-acting mechanism 83 include a ball screw mechanism and a cylinder mechanism. The motor 84 is configured to move the entire substrate holding device 2 in the thickness direction of the laminated substrate Ws via the direct-acting mechanism 83, the linear guide 82, and the connecting member 81, thereby moving the laminated substrate Ws held by the substrate holding device 2 in the thickness direction. In one embodiment, the substrate moving mechanism 80 may include a linear electric actuator (linear motor, etc.) instead of the linear guide 82, the linear mechanism 83, and the motor 84.
基板移動機構80使積層基板Ws在其厚度方向移動,並使間隙G之中心C在積層基板Ws之厚度方向的位置,從噴射噴嘴3之噴射口22a在積層基板Ws之厚度方向的位置移位指定距離程度。換言之,基板移動機構80係以變更在積層基板Ws之厚度方向的間隙G之中心C與噴射噴嘴3之噴射口22a的相對位置之方式而構成。基板移動機構80(更具體而言,係馬達84)電性連接於動作控制部10,基板移動機構80(更具體而言,係馬達84)之動作藉由動作控制部10來控制。The substrate moving mechanism 80 moves the laminated substrate Ws in its thickness direction, displacing the center C of the gap G in the thickness direction of the laminated substrate Ws by a predetermined distance from the position of the nozzle 22a of the ejection nozzle 3 in the thickness direction of the laminated substrate Ws. In other words, the substrate moving mechanism 80 is configured to change the relative position of the center C of the gap G in the thickness direction of the laminated substrate Ws and the ejection nozzle 22a of the ejection nozzle 3. The substrate moving mechanism 80 (more specifically, the motor 84) is electrically connected to the motion control unit 10, and the motion of the substrate moving mechanism 80 (more specifically, the motor 84) is controlled by the motion control unit 10.
在積層基板Ws之厚度方向的移動距離,係以在積層基板Ws之間隙G適切形成填充層L的方式,依據實驗結果等預先決定。The moving distance in the thickness direction of the laminate substrate Ws is predetermined based on experimental results, etc., in order to appropriately form the filling layer L in the gap G of the laminate substrate Ws.
圖15係顯示藉由基板移動機構80使積層基板Ws在其厚度方向移動,並在積層基板Ws之間隙G形成填充層L的方法之一種實施形態的示意圖。圖15為了說明而省略基板移動機構80之圖示。如圖15之步驟2-1所示,在積層基板Ws之厚度方向的間隙G之中心C位於噴射噴嘴3之噴射口22a正下方的狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。例如,藉由基板保持裝置2使積層基板Ws旋轉1周期間,在積層基板Ws之厚度方向的間隙G之中心C位於噴射噴嘴3之噴射口22a正下方的狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹。Figure 15 is a schematic diagram illustrating one embodiment of a method for forming a filler layer L in the gap G of the laminated substrate Ws by moving the laminated substrate Ws in its thickness direction using a substrate moving mechanism 80. For illustrative purposes, Figure 15 omits the substrate moving mechanism 80. As shown in step 2-1 of Figure 15 , with the center C of the gap G in the thickness direction of the laminated substrate Ws positioned directly below the nozzle opening 22a of the spray nozzle 3, filler particles Fp are sprayed onto the surface of the laminated substrate Ws using the spray nozzle 3. For example, while the laminated substrate Ws is rotated once by the substrate holding device 2, the filling material particles Fp are sprayed by the spray nozzle 3 with the center C of the gap G in the thickness direction of the laminated substrate Ws located directly below the spray port 22a of the spray nozzle 3.
其次,步驟2-2係藉由基板移動機構80使積層基板Ws在第三方向D3移動,在使間隙G之中心C在積層基板Ws之厚度方向的位置,比噴射噴嘴3之噴射口22a在積層基板Ws之厚度方向的位置移位於第三方向D3的狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。例如,藉由基板保持裝置2使積層基板Ws旋轉1周期間,在使間隙G之中心C在積層基板Ws之厚度方向的位置,比噴射噴嘴3之噴射口22a在積層基板Ws之厚度方向的位置移位於第三方向D3的狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。Next, step 2-2 is to move the laminated substrate Ws in the third direction D3 by means of the substrate moving mechanism 80, so that the center C of the gap G is positioned in the thickness direction of the laminated substrate Ws and is shifted in the third direction D3 relative to the position of the nozzle 22a of the spray nozzle 3 in the thickness direction of the laminated substrate Ws, and the filling material particles Fp are sprayed onto the surface by means of the spray nozzle 3. For example, while the laminated substrate Ws is rotated by the substrate holding device 2 for one cycle, the center C of the gap G is shifted in the thickness direction of the laminated substrate Ws to a third direction D3 relative to the position of the nozzle 22a of the nozzle 3 in the thickness direction of the laminated substrate Ws, and the filling material particles Fp are sprayed onto the surface by the nozzle 3.
步驟2-3係藉由基板移動機構80使積層基板Ws在與第三方向D3相反之第四方向D4移動,在使間隙G在積層基板Ws之厚度方向的位置,比噴射噴嘴3之噴射口22a在積層基板Ws之厚度方向的位置移位於第四方向D4的狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹。例如,藉由基板保持裝置2使積層基板Ws旋轉1周期間,在使間隙G在積層基板Ws之厚度方向的位置,比噴射噴嘴3之噴射口22a在積層基板Ws之厚度方向的位置移位於第四方向D4狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹在表面上。In step 2-3, the stacking substrate Ws is moved in a fourth direction D4, which is opposite to the third direction D3, by the substrate moving mechanism 80. With the gap G in the thickness direction of the stacking substrate Ws displaced in the fourth direction D4 relative to the position of the nozzle 22a of the nozzle 3 in the thickness direction of the stacking substrate Ws, the filler particles Fp are sprayed by the spray nozzle 3. For example, while the stacking substrate Ws is rotated once by the substrate holding device 2, the filler particles Fp are sprayed onto the surface of the stacking substrate Ws by the spray nozzle 3 while the gap G in the thickness direction of the stacking substrate Ws is displaced in the fourth direction D4 relative to the position of the nozzle 22a of the nozzle 3 in the thickness direction of the stacking substrate Ws.
步驟2-4係藉由基板移動機構80使積層基板Ws在第三方向D3移動,並與步驟2-1同樣地,在積層基板Ws之厚度方向的間隙G之中心C位於噴射噴嘴3之噴射口22a正下方的狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹。例如,藉由基板保持裝置2使積層基板Ws旋轉1周期間,在積層基板Ws之厚度方向的間隙G之中心C位於噴射噴嘴3之噴射口22a正下方的位置狀態下,藉由噴射噴嘴3將填充材料粒子Fp噴吹。亦可反覆進行步驟2-1~2-4,直至以填滿積層基板Ws之間隙G的方式形成填充層L。In step 2-4, the stacking substrate Ws is moved in the third direction D3 by the substrate moving mechanism 80. Similar to step 2-1, filler particles Fp are sprayed through the spray nozzle 3 with the center C of the gap G in the thickness direction of the stacking substrate Ws positioned directly below the nozzle opening 22a of the spray nozzle 3. For example, while the stacking substrate Ws is rotated once by the substrate holding device 2, the filler particles Fp are sprayed through the spray nozzle 3 with the center C of the gap G in the thickness direction of the stacking substrate Ws positioned directly below the nozzle opening 22a of the spray nozzle 3. Steps 2-1 to 2-4 may be repeated until the filling layer L is formed by filling the gap G of the laminate substrate Ws.
一種實施形態係在各個步驟2-1~2-4中,亦可在藉由基板保持裝置2使積層基板Ws複數次旋轉期間,藉由噴射噴嘴3將填充材料粒子Fp噴吹。其他實施形態係亦可在步驟2-1~2-4之後,其次反覆進行步驟2-1~2-4時,使用由與在最初之步驟2-1~2-4使用的填充材料粒子不同材料構成之填充材料粒子。藉此,將由不同材料構成之複數個填充劑層積層在積層基板Ws之間隙G。In one embodiment, in each of steps 2-1 to 2-4, filler particles Fp may be sprayed by the spray nozzle 3 while the laminate substrate Ws is rotated multiple times by the substrate holding device 2. In another embodiment, after steps 2-1 to 2-4, filler particles composed of a different material than the filler particles used in the initial steps 2-1 to 2-4 may be used in the subsequent repetition of steps 2-1 to 2-4. In this way, multiple filler layers composed of different materials are deposited in the gap G of the laminate substrate Ws.
再者,其他實施形態亦可藉由基板移動機構80使積層基板Ws在其厚度方向移動,並藉由噴射噴嘴3將填充材料粒子Fp噴吹。Furthermore, in other embodiments, the laminated substrate Ws may be moved in its thickness direction by the substrate moving mechanism 80 and the filling material particles Fp may be sprayed by the spray nozzle 3 .
採用本實施形態時,藉由基板移動機構80使積層基板Ws在其厚度方向移動,並使填充材料粒子Fp堆積在積層基板Ws之間隙G,填充材料粒子Fp不致偏差堆積在間隙G之一部分,從而可在整個間隙G形成填充層L。When this embodiment is adopted, the substrate moving mechanism 80 moves the stacking substrate Ws in its thickness direction, and the filling material particles Fp are deposited in the gap G of the stacking substrate Ws. The filling material particles Fp are not deposited in a part of the gap G, so that the filling layer L can be formed in the entire gap G.
一種實施形態如圖16所示,基板處理裝置1亦可取代基板移動機構80,而具備使噴射噴嘴3在積層基板Ws之厚度方向移動的移動機構(噴嘴移動機構)85。本實施形態之噴嘴移動機構85具備:保持噴射噴嘴3之噴嘴固持器86;將噴嘴固持器86之移動方向引導至積層基板Ws的厚度方向之直線導軌87;連結至噴嘴固持器86之直動機構88;及連結至直動機構88之馬達89。直動機構88之例可舉出滾珠軸承機構、汽缸機構等。In one embodiment, as shown in FIG16 , the substrate processing apparatus 1 may include a movement mechanism (nozzle movement mechanism) 85 for moving the spray nozzle 3 in the thickness direction of the laminated substrate Ws, in place of the substrate movement mechanism 80. The nozzle movement mechanism 85 of this embodiment includes: a nozzle holder 86 for holding the spray nozzle 3; a linear guide 87 for guiding the movement of the nozzle holder 86 in the thickness direction of the laminated substrate Ws; a linear motion mechanism 88 connected to the nozzle holder 86; and a motor 89 connected to the linear motion mechanism 88. Examples of the linear motion mechanism 88 include a ball bearing mechanism, a cylinder mechanism, and the like.
馬達89係以經由直動機構88、直線導軌87、及噴嘴固持器86使噴射噴嘴3在積層基板Ws之厚度方向移動的方式而構成。一種實施形態係噴嘴移動機構85亦可取代直線導軌87、直動機構88、及馬達89,而具備直動電動致動器(線性馬達等)。The motor 89 is configured to move the spray nozzle 3 in the thickness direction of the laminated substrate Ws via the linear motion mechanism 88, linear guide 87, and nozzle holder 86. In one embodiment, the nozzle moving mechanism 85 may include a linear electric actuator (such as a linear motor) instead of the linear guide 87, linear motion mechanism 88, and motor 89.
噴嘴移動機構85使噴射噴嘴3在積層基板Ws之厚度方向移動,並使噴射噴嘴3之噴射口22a在積層基板Ws之厚度方向的位置,從間隙G之中心C在積層基板Ws之厚度方向之位置移位指定距離程度。換言之,噴嘴移動機構85係以變更在積層基板Ws之厚度方向的間隙G之中心C、與噴射噴嘴3之噴射口22a的相對位置之方式而構成。噴嘴移動機構85(更具體而言,係馬達89)電性連接於動作控制部10,噴嘴移動機構85(更具體而言,係馬達89)之動作藉由動作控制部10來控制。The nozzle moving mechanism 85 moves the spray nozzle 3 in the thickness direction of the laminated substrate Ws, displacing the nozzle orifice 22a of the spray nozzle 3 by a predetermined distance from the center C of the gap G in the thickness direction of the laminated substrate Ws. In other words, the nozzle moving mechanism 85 is configured to change the relative position of the center C of the gap G in the thickness direction of the laminated substrate Ws and the nozzle orifice 22a of the spray nozzle 3. The nozzle moving mechanism 85 (more specifically, the motor 89) is electrically connected to the motion control unit 10, and the motion of the nozzle moving mechanism 85 (more specifically, the motor 89) is controlled by the motion control unit 10.
噴射噴嘴3在積層基板Ws之厚度方向的移動距離,係以在積層基板Ws之間隙G適切形成填充層L的方式,依據實驗結果等而預先決定。The moving distance of the spray nozzle 3 in the thickness direction of the laminated substrate Ws is predetermined based on experimental results and the like so as to appropriately form the filling layer L in the gap G of the laminated substrate Ws.
即使本實施形態仍係藉由噴嘴移動機構85使噴射噴嘴3在積層基板Ws之厚度方向移動,並藉由噴射噴嘴3使填充材料粒子Fp堆積於積層基板Ws之間隙G,而可以填滿間隙G之方式使填充材料粒子Fp堆積。Even in this embodiment, the nozzle moving mechanism 85 is used to move the spray nozzle 3 in the thickness direction of the laminate substrate Ws, and the spray nozzle 3 is used to deposit the filling material particles Fp in the gap G of the laminate substrate Ws, thereby filling the gap G.
圖17係顯示基板處理裝置1之又其他實施形態的前視圖。由於不特別說明之本實施形態的構成及動作,與參照圖10所說明之實施形態相同,因此省略其重複之說明。本實施形態之基板處理裝置1進一步具備檢測積層基板Ws邊緣部之形狀的邊緣形狀檢測器90。本實施形態之噴射噴嘴3係參照圖4而說明之電漿噴鍍噴嘴,不過一種實施形態亦可係參照圖5而說明之火焰噴鍍噴嘴,或是參照圖6而說明之拉瓦爾噴嘴。本實施形態之邊緣形狀檢測器90亦可適用於參照圖7至圖9所說明之任何一種基板處理裝置1。FIG17 is a front view showing yet another embodiment of the substrate processing apparatus 1. Since the structure and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIG10 , a repeated description thereof will be omitted. The substrate processing apparatus 1 of this embodiment further includes an edge shape detector 90 for detecting the shape of the edge of the laminated substrate Ws. The spray nozzle 3 of this embodiment is the plasma plating nozzle described with reference to FIG4 , but one embodiment may also be the flame plating nozzle described with reference to FIG5 , or the Laval nozzle described with reference to FIG6 . The edge shape detector 90 of this embodiment can also be applied to any substrate processing apparatus 1 described with reference to FIG. 7 to FIG. 9 .
本實施形態之邊緣形狀檢測器90係以生成積層基板Ws邊緣部之影像,來檢測積層基板Ws邊緣部之形狀的方式而構成。如圖2所示,邊緣形狀檢測器90位於被基板保持裝置2所保持之積層基板Ws的半徑方向外側,且朝向包含積層基板Ws之間隙G的積層基板Ws邊緣部而配置。邊緣形狀檢測器90在積層基板Ws之旋轉方向配置於噴射噴嘴3的上游側,且配置於積層基板Ws之側方。邊緣形狀檢測器90具備無圖示之影像檢測器(例如,CMOS檢測器或CCD檢測器)。一種實施形態之邊緣形狀檢測器90亦可係非接觸型之雷射變位檢測器的二維輪廓量測器(線檢測器)。The edge shape detector 90 of this embodiment is configured to generate an image of the edge of the laminated substrate Ws to detect the shape of the edge of the laminated substrate Ws. As shown in Figure 2, the edge shape detector 90 is located radially outward of the laminated substrate Ws held by the substrate holder 2, and is positioned toward the edge of the laminated substrate Ws, including the gap G between the laminated substrate Ws and the edge of the laminated substrate Ws. The edge shape detector 90 is positioned upstream of the spray nozzle 3 in the rotational direction of the laminated substrate Ws and to the side of the laminated substrate Ws. The edge shape detector 90 includes an image detector (not shown) (e.g., a CMOS detector or a CCD detector). In one embodiment, the edge shape detector 90 may be a two-dimensional profile measuring device (line detector) that is a non-contact laser displacement detector.
圖18係顯示藉由邊緣形狀檢測器90所生成之積層基板Ws的邊緣部影像之一例圖。邊緣形狀檢測器90係以依據積層基板Ws邊緣部之影像來檢測積層基板Ws邊緣部之形狀的方式而構成。檢測出之積層基板Ws邊緣部的形狀包含顯示第一基板W1之邊緣部E1與第二基板W2之邊緣部E2的間隙G之谷的形狀。如圖17所示,邊緣形狀檢測器90電性連接於動作控制部10。藉由邊緣形狀檢測器90檢測出之積層基板Ws的邊緣部形狀送至動作控制部10。FIG18 shows an example of an edge image of a laminated substrate Ws generated by the edge shape detector 90. The edge shape detector 90 is configured to detect the shape of the edge of the laminated substrate Ws based on the image of the edge of the laminated substrate Ws. The detected shape of the edge of the laminated substrate Ws includes the shape of the valley of the gap G between the edge E1 of the first substrate W1 and the edge E2 of the second substrate W2. As shown in FIG17 , the edge shape detector 90 is electrically connected to the motion control unit 10. The edge shape of the laminated substrate Ws detected by the edge shape detector 90 is transmitted to the motion control unit 10.
動作控制部10係以依據藉由邊緣形狀檢測器90檢測出之積層基板Ws的邊緣部形狀,來控制基板搖動機構70之動作的方式而構成。更具體而言,動作控制部10係依據藉由邊緣形狀檢測器90檢測出之積層基板Ws的邊緣部形狀,來決定在積層基板Ws之間隙G形成填充層L時積層基板Ws的傾斜角度。例如,動作控制部10決定對圖12之步驟1-2中噴射噴嘴3噴射填充材料粒子Fp之噴射方向J的第一角度;及對步驟1-3中噴射噴嘴3噴射填充材料粒子Fp之噴射方向J的第二角度。動作控制部10對基板搖動機構70下達指令,以成為決定之傾斜角度的方式使積層基板Ws搖動,並藉由噴射噴嘴3在積層基板Ws之間隙G形成填充層L。The motion control unit 10 is configured to control the motion of the substrate rocking mechanism 70 based on the edge shape of the buildup substrate Ws detected by the edge shape detector 90. More specifically, the motion control unit 10 determines the tilt angle of the buildup substrate Ws when forming the filling layer L in the gap G of the buildup substrate Ws based on the edge shape of the buildup substrate Ws detected by the edge shape detector 90. For example, the motion control unit 10 determines the first angle of the spray direction J for spraying the filling material particles Fp from the spray nozzle 3 in step 1-2 of FIG. 12 , and the second angle of the spray direction J for spraying the filling material particles Fp from the spray nozzle 3 in step 1-3. The operation control unit 10 issues a command to the substrate rocking mechanism 70 to rock the buildup substrate Ws at a predetermined tilt angle, and forms a filling layer L in the gap G of the buildup substrate Ws using the spray nozzle 3.
採用本實施形態時,依據藉由邊緣形狀檢測器90檢測出之積層基板Ws的邊緣部形狀,來決定積層基板Ws之傾斜角度。結果,可以填滿積層基板Ws之間隙G的方式適切形成填充層L。In this embodiment, the tilt angle of the build-up substrate Ws is determined based on the edge shape of the build-up substrate Ws detected by the edge shape detector 90. As a result, the filling layer L can be appropriately formed to fill the gap G of the build-up substrate Ws.
參照圖17及圖18而說明之邊緣形狀檢測器90,亦可適用於具備參照圖13而說明之噴嘴搖動機構75的基板處理裝置1。此時,動作控制部10係以依據藉由邊緣形狀檢測器90所檢測之積層基板Ws的邊緣部形狀來控制噴嘴搖動機構75之動作的方式而構成。更具體而言,動作控制部10係依據藉由邊緣形狀檢測器90所檢測之積層基板Ws的邊緣部形狀,決定在積層基板Ws之間隙G形成填充層L時噴射噴嘴3的傾斜角度。動作控制部10對噴嘴搖動機構75下達指令,以成為決定之角度的方式使噴射噴嘴3搖動,並藉由噴射噴嘴3在積層基板Ws之間隙G形成填充層L。The edge shape detector 90 described with reference to Figures 17 and 18 can also be applied to the substrate processing apparatus 1 equipped with the nozzle oscillating mechanism 75 described with reference to Figure 13. In this case, the motion control unit 10 is configured to control the motion of the nozzle oscillating mechanism 75 based on the edge shape of the build-up substrate Ws detected by the edge shape detector 90. More specifically, the motion control unit 10 determines the tilt angle of the ejection nozzle 3 when forming the filling layer L in the gap G of the build-up substrate Ws based on the edge shape of the build-up substrate Ws detected by the edge shape detector 90. The operation control unit 10 issues a command to the nozzle swing mechanism 75 to swing the ejection nozzle 3 at a predetermined angle, thereby forming a filling layer L in the gap G of the laminated substrate Ws using the ejection nozzle 3.
參照圖17及圖18而說明之邊緣形狀檢測器90,亦可適用於具備參照圖14而說明之基板移動機構80的基板處理裝置1。此時,動作控制部10係以依據藉由邊緣形狀檢測器90所檢測之積層基板Ws的邊緣部形狀,來控制基板移動機構80之動作的方式而構成。更具體而言,動作控制部10係依據藉由邊緣形狀檢測器90所檢測之積層基板Ws的邊緣部形狀,決定在積層基板Ws之間隙G形成填充層L時,在積層基板Ws的厚度方向之移動距離。動作控制部10對基板移動機構80下達指令,使積層基板Ws在其厚度方向移動決定之移動距離程度,並藉由噴射噴嘴3在積層基板Ws之間隙G形成填充層L。The edge shape detector 90 described with reference to Figures 17 and 18 can also be applied to the substrate processing apparatus 1 equipped with the substrate moving mechanism 80 described with reference to Figure 14. In this case, the motion control unit 10 is configured to control the motion of the substrate moving mechanism 80 based on the edge shape of the laminated substrate Ws detected by the edge shape detector 90. More specifically, the motion control unit 10 determines the movement distance in the thickness direction of the laminated substrate Ws when forming the filling layer L in the gap G of the laminated substrate Ws based on the edge shape of the laminated substrate Ws detected by the edge shape detector 90. The motion control unit 10 issues a command to the substrate moving mechanism 80 to move the laminated substrate Ws by a predetermined distance in its thickness direction, and forms a filling layer L in the gap G of the laminated substrate Ws by the spray nozzle 3.
參照圖17及圖18而說明之邊緣形狀檢測器90亦可適用於具備參照圖16而說明之噴嘴移動機構85的基板處理裝置1。此時,動作控制部10係以依據藉由邊緣形狀檢測器90所檢測之積層基板Ws的邊緣部形狀,來控制噴嘴移動機構85之動作的方式而構成。更具體而言,動作控制部10係依據藉由邊緣形狀檢測器90所檢測之積層基板Ws的邊緣部形狀,決定在積層基板Ws之間隙G形成填充層L時噴射噴嘴3在積層基板Ws之厚度方向的移動距離。動作控制部10對噴嘴移動機構85下達指令,使噴射噴嘴3在積層基板Ws之厚度方向移動決定之移動距離程度,並藉由噴射噴嘴3在積層基板Ws之間隙G形成填充層L。The edge shape detector 90 described with reference to Figures 17 and 18 can also be applied to the substrate processing apparatus 1 equipped with the nozzle moving mechanism 85 described with reference to Figure 16. In this case, the motion control unit 10 is configured to control the motion of the nozzle moving mechanism 85 based on the edge shape of the laminated substrate Ws detected by the edge shape detector 90. More specifically, the motion control unit 10 determines the movement distance of the ejection nozzle 3 in the thickness direction of the laminated substrate Ws when forming the filling layer L in the gap G of the laminated substrate Ws based on the edge shape of the laminated substrate Ws detected by the edge shape detector 90. The operation control unit 10 issues a command to the nozzle moving mechanism 85 to move the spray nozzle 3 by a predetermined distance in the thickness direction of the laminate substrate Ws, thereby forming a filling layer L in the gap G of the laminate substrate Ws through the spray nozzle 3 .
一種實施形態係邊緣形狀檢測器90亦可設於與基板處理裝置1不同的裝置。此時,邊緣形狀檢測器90預先檢測搬送至基板處理裝置1前之積層基板Ws的邊緣部形狀,藉由邊緣形狀檢測器90所檢測之積層基板Ws的邊緣部形狀送至動作控制部10。動作控制部10依據積層基板Ws之邊緣部形狀控制基板搖動機構70、噴嘴搖動機構75、基板移動機構80、或噴嘴移動機構85之動作,並藉由噴射噴嘴3在積層基板Ws之間隙G形成填充層L。In one embodiment, the edge shape detector 90 may be installed in a separate device from the substrate processing apparatus 1. In this case, the edge shape detector 90 pre-detects the edge shape of the laminated substrate Ws before it is transported to the substrate processing apparatus 1. The edge shape of the laminated substrate Ws detected by the edge shape detector 90 is sent to the motion control unit 10. The motion control unit 10 controls the operation of the substrate oscillating mechanism 70, the nozzle oscillating mechanism 75, the substrate moving mechanism 80, or the nozzle moving mechanism 85 based on the edge shape of the laminated substrate Ws, and forms the filling layer L in the gap G of the laminated substrate Ws using the spray nozzle 3.
上述實施形態係以具有本發明所屬之技術領域的一般知識者可實施本發明為目的而記載者。熟悉本技術之業者當然可實施上述實施形態之各種變化例,本發明之技術性思想亦可適用於其他實施形態。因此,本發明不限定於記載之實施形態,而係在按照藉由申請專利範圍定義之技術性思想的最廣範圍內作解釋者。The above embodiments are described with the intention that those skilled in the art can implement the present invention. Those skilled in the art will naturally be able to implement various variations of the above embodiments, and the technical concepts of the present invention are also applicable to other embodiments. Therefore, the present invention is not limited to the described embodiments but is to be interpreted within the broadest scope of the technical concepts defined by the scope of the patent application.
[產業上之可利用性] 本發明可利用於在接合有複數片基板之積層基板形成填充層的基板處理裝置及基板處理方法。 [Industrial Applicability] The present invention can be used in a substrate processing apparatus and method for forming a filling layer on a laminated substrate comprising a plurality of substrates bonded together.
1:基板處理裝置 2:基板保持裝置 3:噴射噴嘴 5:保持載台 5a:保持面 6:旋轉軸 8:旋轉機構 10:動作控制部 10a:記憶裝置 10b:演算裝置 12:填充材料粒子供給管線 13:填充材料粒子供給源 15:載體氣供給管線 16:載體氣供給源 17:流量調整閥 18:流量計 20:電漿氣體供給管線 22:噴嘴本體 22a:噴射口 23:陰極 24:陽極 25:電漿氣體流路 27:填充材料粒子導入管線 30:燃料供給管線 31:助燃性氣體供給管線 33:噴嘴本體 33a:噴射口 34:燃料流路 35:助燃性氣體流路 36:燃燒室 38:填充材料粒子導入管線 40:噴嘴本體 40a:縮徑部 40b:噴射口 41:流路 41a:喉部 43:加熱氣體導入管線 45:加熱氣體供給管線 46:加熱器 47:載體氣(carrier gas)供給管線 48:流量調整閥 49:流量計 51:氣化室 53:加熱器 55:真空室 56:真空管線 58:真空泵浦 60:懸濁液生成裝置 61:懸濁液泵浦 65:氣溶膠室(aerosol chamber) 70:搖動機構(基板搖動機構) 72:搖動臂 73:搖動軸 74:馬達 75:搖動機構(噴嘴搖動機構) 77:噴嘴固持器 78:搖動軸 79:馬達 80:基板移動機構 81:連結構件 82:直線導軌 83:直動機構 84:馬達 85:噴嘴移動機構 86:噴嘴固持器 87:直線導軌 88:直動機構 89:馬達 90:邊緣形狀檢測器 D1:第一方向 D2:第二方向 D3:第三方向 D4:第四方向 E1,E2:邊緣部 Ek:刀緣部 Fm:填充材料 Fp:填充材料粒子 Fs:懸濁液 G:間隙 J:噴射方向 K:從電漿噴鍍噴嘴或火焰噴鍍噴嘴或拉瓦爾噴嘴的噴射口至積層基板的邊緣部最外端之距離 L:填充層 O:搖動中心 P:電漿 R:旋轉軸心 S1,S2:元件面 W1:第一基板 W2:第二基板 Ws:積層基板 1: Substrate processing device 2: Substrate holding device 3: Spray nozzle 5: Holding stage 5a: Holding surface 6: Rotation axis 8: Rotation mechanism 10: Motion control unit 10a: Memory device 10b: Calculation device 12: Filler particle supply line 13: Filler particle supply source 15: Carrier gas supply line 16: Carrier gas supply source 17: Flow control valve 18: Flow meter 20: Plasma gas supply line 22: Nozzle body 22a: Spray port 23: Cathode 24: Anode 25: Plasma gas flow path 27: Filler particle introduction line 30: Fuel supply line 31: Combustion-supporting gas supply line 33: Nozzle body 33a: Injection port 34: Fuel flow path 35: Combustion-supporting gas flow path 36: Combustion chamber 38: Filler particle inlet line 40: Nozzle body 40a: Reduction section 40b: Injection port 41: Flow path 41a: Throat section 43: Heating gas inlet line 45: Heating gas supply line 46: Heater 47: Carrier gas supply line 48: Flow control valve 49: Flow meter 51: Vaporization chamber 53: Heater 55: Vacuum chamber 56: Vacuum line 58: Vacuum pump 60: Suspension generating device 61: Suspension pump 65: Aerosol chamber 70: Rocking mechanism (substrate rocking mechanism) 72: Rocking arm 73: Rocking shaft 74: Motor 75: Rocking mechanism (nozzle rocking mechanism) 77: Nozzle holder 78: Rocking shaft 79: Motor 80: Substrate moving mechanism 81: Connecting member 82: Linear guide rail 83: Direct-acting mechanism 84: Motor 85: Nozzle moving mechanism 86: Nozzle holder 87: Linear guide rail 88: Direct-acting mechanism 89: Motor 90: Edge shape detector D1: First direction D2: Second direction D3: Third direction D4: Fourth direction E1, E2: Edge Ek: Knife edge Fm: Filler Fp: Filler particles Fs: Suspended liquid G: Gap J: Spray direction K: Distance from the nozzle of the plasma, flame, or Laval nozzle to the outermost edge of the laminate substrate L: Filler layer O: Oscillation center P: Plasma R: Rotation axis S1, S2: Component surface W1: First substrate W2: Second substrate Ws: Laminated substrate
圖1A係顯示成為處理對象之積層基板的邊緣部之一例的剖面圖。 圖1B係顯示形成有填充層之積層基板的邊緣部之一例的剖面圖。 圖1C係顯示形成填充層後減薄化之積層基板的邊緣部之一例的剖面圖。 圖2係顯示基板處理裝置之一種實施形態的前視圖。 圖3係圖2所示之基板處理裝置的側視圖。 圖4係顯示噴射噴嘴之一種實施形態的示意圖。 圖5係顯示噴射噴嘴之其他實施形態的示意圖。 圖6係顯示噴射噴嘴之又其他實施形態的示意圖。 圖7係顯示基板處理裝置之其他實施形態的側視圖。 圖8係顯示基板處理裝置之又其他實施形態的側視圖。 圖9係顯示基板處理裝置之又其他實施形態的側視圖。 圖10係顯示基板處理裝置之又其他實施形態的側視圖。 圖11係顯示藉由噴射噴嘴使填充材料粒子堆積在積層基板間隙之情形的示意圖。 圖12係顯示藉由基板搖動機構使積層基板搖動,並在積層基板之間隙形成填充層的方法之一種實施形態的示意圖。 圖13係顯示搖動機構之其他實施形態的側視圖。 圖14係顯示基板處理裝置之又其他實施形態的側視圖。 圖15係顯示藉由基板移動機構使積層基板在其厚度方向移動,並在積層基板之間隙形成填充層的方法之一種實施形態的示意圖。 圖16係顯示移動機構之其他實施形態的側視圖。 圖17係顯示基板處理裝置之又其他實施形態的前視圖。 圖18係顯示藉由邊緣形狀檢測器所生成之積層基板的邊緣部影像之一例圖。 Figure 1A is a cross-sectional view showing an example of the edge of a laminated substrate being processed. Figure 1B is a cross-sectional view showing an example of the edge of a laminated substrate having a filler layer formed thereon. Figure 1C is a cross-sectional view showing an example of the edge of a laminated substrate thinned after the filler layer is formed. Figure 2 is a front view showing an embodiment of a substrate processing apparatus. Figure 3 is a side view of the substrate processing apparatus shown in Figure 2. Figure 4 is a schematic view showing an embodiment of a spray nozzle. Figure 5 is a schematic view showing another embodiment of a spray nozzle. Figure 6 is a schematic view showing yet another embodiment of a spray nozzle. Figure 7 is a side view showing another embodiment of a substrate processing apparatus. Figure 8 is a side view showing yet another embodiment of a substrate processing apparatus. Figure 9 is a side view showing yet another embodiment of a substrate processing apparatus. Figure 10 is a side view showing yet another embodiment of a substrate processing apparatus. Figure 11 is a schematic diagram showing how filler material particles are deposited in gaps between stacked substrates using a spray nozzle. Figure 12 is a schematic diagram showing one embodiment of a method for forming a filler layer in gaps between stacked substrates by rocking a stacked substrate using a substrate rocking mechanism. Figure 13 is a side view showing yet another embodiment of a rocking mechanism. Figure 14 is a side view showing yet another embodiment of a substrate processing apparatus. Figure 15 is a schematic diagram showing one embodiment of a method for moving a laminate substrate in its thickness direction using a substrate moving mechanism to form a filler layer in gaps between the laminate substrates. Figure 16 is a side view showing yet another embodiment of the moving mechanism. Figure 17 is a front view showing yet another embodiment of a substrate processing apparatus. Figure 18 is an example of an edge image of a laminate substrate generated by an edge shape detector.
1:基板處理裝置 1: Substrate processing equipment
2:基板保持裝置 2: Substrate holding device
3:噴射噴嘴 3: Spray nozzle
5:保持載台 5: Maintain the stage
5a:保持面 5a: Maintaining the face
6:旋轉軸 6: Rotation axis
8:旋轉機構 8: Rotating mechanism
10:動作控制部 10: Motion Control Unit
10a:記憶裝置 10a: Memory device
10b:演算裝置 10b: Calculation device
12:填充材料粒子供給管線 12: Filling material particle supply pipeline
13:填充材料粒子供給源 13: Filling material particle supply source
15:載體氣(carrier gas)供給管線 15: Carrier gas supply line
16:載體氣供給源 16: Carrier gas supply source
17:流量調整閥 17: Flow Control Valve
18:流量計 18: Flow meter
E1,E2:邊緣部 E1, E2: Edges
Fp:填充材料粒子 Fp: Filler particles
G:間隙 G: Gap
R:旋轉軸心 R: Rotation axis
W1:第一基板 W1: First substrate
W2:第二基板 W2: Second substrate
Ws:積層基板 Ws: built-up substrate
Claims (28)
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| JP2024-009885 | 2024-01-26 |
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