TW202449235A - Electroplating equipment and electroplating system - Google Patents

Abstract

An electroplating apparatus and an electroplating system. The electroplating apparatus comprises: an electroplating bath used for accommodating an electroplating solution and a substrate; a non-soluble anode provided inside the electroplating bath and located below the substrate; an anode solution inlet used for supplying the electroplating solution into the electroplating bath; and an anode solution outlet used for discharging the electroplating solution from the electroplating bath. The anode solution inlet is higher than the non-soluble anode and the anode solution outlet, such that the electroplating solution flows in a first direction away from the substrate between the anode solution inlet and the anode solution outlet during electroplating; the flow velocity of the electroplating solution in the electroplating bath is set such that the electroplating solution applies an acting force toward the first direction to bubbles generated on the surface of the non-soluble anode; and the acting force is greater than the buoyancy of the bubbles, such that the bubbles are away from the substrate, thereby overcoming the problem of the quality of the substrate being affected due to the non-soluble anode generating more bubbles during electroplating of the substrate.

Description

Electroplating equipment and electroplating system

The present invention relates to the field of semiconductor electroplating equipment, and further relates to an electroplating device and an electroplating system.

The substrate plating process refers to the process of electroplating metal ions in the plating solution onto the substrate surface to form metal interconnects during the chip manufacturing process.

The electroplating equipment used to perform the substrate electroplating process generally has a soluble anode, which can replenish the metal ions consumed in the electroplating solution by dissolving itself, which is beneficial to maintaining the metal ion concentration in the electroplating solution. However, the soluble anode also has its own defects.

Taking the soluble copper anode used in the copper electroplating process on the substrate as an example, it is found in practice that the following defects exist during the substrate electroplating process:

1. As the copper anode is consumed, the distance between the copper anode and the substrate serving as the cathode changes, which can easily lead to non-uniform deposition of copper. FIG1 and FIG2 are schematic diagrams of the copper anode 215 before and after electroplating, respectively. As shown in FIG. 1 and FIG. 2 , during the electroplating process, the copper anode 215 is continuously consumed, causing the distance between the copper anode 215 and the substrate 100 serving as the cathode to continuously increase, that is, the distance between the copper anode 215 and the substrate 100 increases from the distance d1 before electroplating to the distance d2 after electroplating, and the surface shape of the copper anode 215 is constantly changing, all of which will cause uneven distribution of the electric field between the substrate 100 and the copper anode 215, thereby causing uneven deposition of copper on the surface of the substrate 100.

2. The electroplating copper process generally uses phosphorus-containing copper anodes. However, when the phosphorus-containing copper anode is consumed, a layer of black anodic mud (the main component is copper phosphide Cu ₃ P ₂ ) will be produced on its surface. The produced anodic mud needs to be maintained regularly. Too much anodic mud will clog the pipes and ion membranes.

3. It is necessary to stop production and production line regularly to replenish or replace consumed anodes.

In view of the above-mentioned defects when using soluble anodes for electroplating, the prior art proposes a technical solution of using non-soluble anodes to replace soluble anodes.

During the electroplating of the substrate, the insoluble anode is not consumed as the electroplating reaction progresses, so that the surface shape of the insoluble anode remains unchanged, and the distance between the insoluble anode and the substrate remains unchanged. Therefore, the use of the insoluble anode can maintain a uniform distribution of the electric field between the anode and the cathode, which is conducive to obtaining good electroplating uniformity.

However, when using a non-soluble anode to electroplate a substrate, a reduction reaction occurs on the surface of the substrate, which is the cathode, reducing the metal ions in the electroplating solution to solid metal; an oxidation reaction occurs on the surface of the non-soluble anode, electrolyzing the water in the electroplating solution to generate oxygen, which causes bubbles to form on the surface of the non-soluble anode. Taking copper electroplating as an example, the following reactions will occur when using a non-soluble anode:

Cathode: Cu ²⁺ +2e=Cu;

Anode: 2H ₂ O-4e=O ₂ +4H ⁺ ;

Overall reaction: 2CuSO ₄ +2H ₂ O=2Cu+O ₂ +2H ₂ SO ₄ .

In practical applications, if the bubbles generated on the surface of the non-soluble anode adhere to the surface of the substrate, it will cause pits to form on the coating, affecting the quality of the substrate. This, to a certain extent, hinders the application of non-soluble anodes in the field of substrate electroplating.

In summary, how to overcome the influence of bubbles generated by non-soluble anodes during substrate electroplating on substrate quality is a technical problem that technicians in this field urgently need to solve.

In view of the above technical problems, the purpose of the present invention is to overcome the problem that a large number of bubbles will be generated by the non-soluble anode during the electroplating of the substrate, which affects the quality of the substrate. In order to achieve the above purpose, the present invention provides a plating device and a plating system.

In some embodiments, the electroplating device is used to electroplate metal onto a substrate, comprising: a plating tank for containing a plating solution and the substrate; an insoluble anode disposed inside the plating tank and below the substrate; an anodic liquid inlet for supplying the plating solution into the plating tank; and an anodic liquid outlet for discharging the plating solution from the plating tank; wherein the anodic liquid inlet is higher than the insoluble anode and the substrate. The anodic liquid outlet is configured so that the plating liquid flows between the anodic liquid inlet and the anodic liquid outlet along a first direction away from the substrate during the electroplating operation, and the flow rate of the plating liquid in the plating tank is configured so that the plating liquid exerts a force in the first direction on the bubbles generated on the surface of the insoluble anode, and the force is greater than the buoyancy of the bubbles, so that the bubbles are away from the substrate.

Furthermore, the bottom of the plating tank is conical or hemispherical, and the anodic liquid outlet is located at the center of the bottom of the plating tank.

Furthermore, it also includes a guide plate element, which is arranged between the insoluble anode and the anode liquid outlet.

Furthermore, the guide plate element includes a plurality of guide plates arranged at intervals, and the interval between at least two adjacent guide plates gradually decreases along the first direction to form a flow channel for the electroplating solution.

Furthermore, it also includes an ion membrane, which is arranged inside the plating tank. The ion membrane vertically divides the inside of the plating tank into a cathode area and an anode area. The anode liquid inlet and the anode liquid outlet are both located in the anode area, and the substrate is located in the cathode area.

Furthermore, a plurality of the anodic liquid inlets are arranged on the side wall of the plating tank, and the anodic liquid inlets are spaced and distributed at the same level of the plating tank.

Furthermore, the electroplating device also includes: a plating liquid supply pipeline, a plating liquid discharge pipeline and a liquid pump, wherein the plating liquid supply pipeline is connected to the anodic liquid inlet and is used to supply the plating liquid to the plating tank through the anodic liquid inlet; the plating liquid discharge pipeline is connected to the anodic liquid outlet and is used to discharge the plating liquid through the anodic liquid outlet; the liquid pump is installed in the plating liquid supply pipeline and/or the plating liquid discharge pipeline and is used to adjust the flow rate of the plating liquid in the plating tank.

Furthermore, the electroplating device also includes: a power source for supplying power to the insoluble anode and the substrate.

Furthermore, the electroplating device also includes: a liquid supply device, which is used to provide electroplating liquid to the electroplating device.

In some embodiments, the electroplating system includes the above-mentioned electroplating device and further includes: a liquid supply device for providing plating liquid to the electroplating device.

Furthermore, the liquid supply device in the electroplating system also includes: a dissolving tank for supplying plating liquid to the plating tank; a powder metering and adding device for supplying metal powder to the dissolving tank; a current metering device for detecting the output power of the power source; and a controller configured to control the powder metering and adding device to add a predetermined amount of the metal powder when the current metering device detects that the output power of the power source increases by a preset ampere-hour.

Furthermore, the electroplating system also includes: a buffer tank connected between the plating tank and the dissolving tank, used to temporarily store and mix the electroplating solution circulating between the dissolving tank and the plating tank.

Furthermore, the dissolving tank includes a stirring device and/or a temperature control device.

Compared with the prior art, the present invention has the following beneficial effects:

1. Create a downward plating solution flow above the insoluble anode so that the plating solution exerts a force on the bubbles to move away from the substrate, making it difficult for the bubbles to approach or adhere to the substrate surface, thus avoiding the formation of concave holes in the substrate coating;

2. Multiple anodic liquid inlets are provided, and the anodic liquid outlet is designed below the insoluble anode. In combination with the guide plate and the conical or spherical bottom of the plating tank, the flow rate of the plating liquid flowing through the surface of the insoluble anode can be basically consistent, the reaction rate of the insoluble anode surface and the plating liquid at various locations can be basically consistent, and the force of the plating liquid on the bubbles at various locations on the surface of the insoluble anode can be basically consistent;

3. The ion membrane is used to separate the plating tank into the anode area and the cathode area. On the one hand, it can be used to prevent the additives in the cathode area from entering the anode during electroplating and being oxidized and decomposed; on the other hand, it can be used to prevent solid particles below 1 micron that are input into the anode area through the anode liquid inlet from entering the cathode area and adhering to the substrate surface, affecting the yield;

4. By using insoluble anodes, the anode will not be consumed during the substrate electroplating, and its shape and position can remain unchanged, providing a stable and uniform electric field distribution, and the uniformity of electroplating is guaranteed. Compared with phosphorus copper anodes, the surface of insoluble anodes will not passivate, allowing higher anode current density and lower maintenance costs.

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation of the present invention will be described below with reference to the drawings. Obviously, the drawings described below are only some embodiments of the present invention, and for ordinary technicians in this field, other drawings and other implementations can be obtained based on these drawings without creative labor.

In order to simplify the drawings, only the parts related to the invention are schematically shown in each figure, and they do not represent the actual structure of the product. In addition, in order to simplify the drawings and facilitate understanding, in some figures, only one of the parts with the same structure or function is schematically drawn or marked. In this article, "one" not only means "only one", but also means "more than one".

In this article, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be a connection between two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

In addition, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance.

As shown in FIG. 3 , the present embodiment discloses a plating device 21, which is used for a substrate plating process, that is, plating metal onto a substrate 100.

As shown in FIG3 , the electroplating device 21 is configured to electroplate the substrate 100, and has a plating tank 210 for containing the plating solution and the substrate 100, and a non-soluble anode 213 is arranged inside the plating tank 210, and the substrate 100 to be plated can be fixed above the non-soluble anode 213. The dotted line in FIG3 represents the liquid level of the plating solution. The anode liquid inlet 216 is used to supply the plating solution to the plating tank 210; the anode liquid outlet 217 is used to discharge the plating solution in the plating tank 210. The electroplating device 21 is also configured with a power supply 260 (as shown in FIG5 ) for supplying power to the non-soluble anode 213 and the substrate 100 to be plated. It should be noted that, in the present application, metal ions refer to ions of metal plated onto a substrate.

The insoluble anode 213 is a mesh or plate structure. If a plate-shaped insoluble anode 213 is used, a plurality of through holes that are connected up and down can be set on the surface of the insoluble anode 213, or a gap can be preset between the edge of the insoluble anode 213 and the inner wall of the plating tank 210, so that the plating solution can flow from the above-mentioned through holes or gaps to the anode liquid outlet 217 below the insoluble anode 213. In addition, the insoluble anode 213 may use titanium as a substrate, and a precious metal coating such as iridium, tantalum, platinum, etc. may be coated on its surface. Alternatively, materials such as lead, carbon, platinum, graphite, nickel, stainless steel, lead alloy, and cast magnetic iron oxide may be used.

In this embodiment, in order to solve the problem that when the insoluble anode 213 is used, during the electroplating process of the substrate in the electroplating device 21, the water in the electroplating solution at the surface of the insoluble anode 213 is electrolyzed to generate a large number of bubbles, which affects the quality of the substrate. The anodic liquid inlet 216 is constructed to be higher than the insoluble anode 213 and the anodic liquid outlet 217. In the example shown in FIG. 3, the anodic liquid inlet 216 is arranged on the side wall of the plating tank 210 and is higher than the insoluble anode 213; the anodic liquid outlet 217 is arranged at the bottom of the plating tank 210 and is located below the insoluble anode 213. Since the anodic liquid inlet 216 is located above the anodic liquid outlet 217 and the insoluble anode 213, during the electroplating operation, the electroplating liquid flows between the anodic liquid inlet 216 and the anodic liquid outlet 217 along the first direction d away from the substrate 100, thereby preventing the bubbles generated on the surface of the insoluble anode 213 from floating upwards through the flow direction of the electroplating liquid. In addition, the flow rate of the electroplating liquid in the plating tank 210 is configured such that the electroplating liquid exerts a force on the bubbles in the first direction d, and the force is greater than the buoyancy of the bubbles, so that the bubbles are away from the substrate 100, thereby preventing the bubbles from floating up and adhering to the surface of the substrate 100, resulting in the formation of concave holes on the coating, which affects the quality of the substrate.

In a specific example, the electroplating device 21 further includes a plating solution supply pipeline 2160 and a plating solution discharge pipeline 2170. As shown in FIG3 , the plating solution supply pipeline 2160 is connected to the anodic solution inlet 216 for supplying plating solution to the plating tank 210; the plating solution discharge pipeline 2170 is connected to the anodic solution outlet 217 for discharging the plating solution from the plating tank 210. At least one of the above-mentioned plating solution supply pipeline 2160 and the plating solution discharge pipeline 2170 is equipped with a liquid pump 219 for adjusting the flow rate of the plating solution in the plating tank 210. In the example shown in FIG3 , the liquid pump 219 is arranged on the plating solution supply pipeline 2160.

Taking the cross-sectional diameter of the anodic liquid outlet 217 along the flow direction of the plating liquid as 300 mm as an example, in order to make the force exerted by the plating liquid on the bubbles away from the substrate 100 greater than the buoyancy of the bubbles, the plating liquid flow rate at the anodic liquid outlet 217 can be configured to 0.01 m/s to 0.02 m/s through the liquid pump 219.

In addition, in order to make the flow rate of the plating liquid flowing through the surface of the insoluble anode 213 more uniform, the bottom of the plating tank 210 can be designed to be conical or hemispherical, and the anodic liquid outlet 217 is set at the center of the bottom of the plating tank 210 and on the center line of the insoluble anode 213; a guide plate element 218 can also be set between the insoluble anode 213 and the anodic liquid outlet 217; and multiple anodic liquid inlets 216 can be evenly set at the same level of the side wall of the plating tank 210, and multiple plating liquid supply pipelines 2160 are respectively connected to the multiple anodic liquid inlets 216 in a one-to-one correspondence. , or the same plating liquid supply pipeline 2160 is divided into multiple branches and connected to multiple anode liquid inlets 216 one by one, so as to synchronously supply plating liquid to multiple anode liquid inlets 216, thereby improving the uniformity of the plating liquid flow rate on the surface of the insoluble anode 213. This is not only beneficial to the uniform reaction speed of the plating liquid at various locations on the surface of the insoluble anode 213, so that the plated substrate 100 has good plating uniformity, but also beneficial to the consistent force of the plating liquid on the bubbles at various locations on the surface of the insoluble anode 213, so as to better inhibit the floating of bubbles, thereby avoiding the influence of bubbles on the quality of the substrate.

As shown in Figures 3 and 4, the guide plate element 218 can be constructed as a plurality of guide plates 2180 located between the insoluble anode 213 and the anode liquid outlet 217, the guide plates 2180 are arranged side by side at intervals and the two ends of each guide plate 2180 are fixed to the side walls of the plating tank 210, and the interval between at least two adjacent guide plates 2180 gradually decreases along the first direction d. A flow channel of the plating solution is formed between adjacent guide plates 2180, which is used to adjust the flow rate of the plating solution near the side wall and the center line of the plating tank 210, so as to avoid the plating solution flow rate being slow near the side wall of the plating tank 210 and being fast near the center line of the plating tank 210, thereby improving the uniformity of the plating solution flow rate on the surface of the insoluble anode 213. In addition, the guide plate element 218 can also be constructed as a plate with a plurality of through holes on the surface, and the axial direction of each through hole can point to the anode liquid outlet 217 to form a flow channel of the plating solution, which is used to adjust the flow rate of the plating solution near the side wall and the center line of the plating tank 210.

In addition, in this embodiment, as shown in FIG. 3 , an ion film 214 may be further disposed in the plating tank 210 , and the ion film 214 is preferably disposed horizontally, and a smaller angle error is allowed, that is, a smaller angle between the ion film 214 and the horizontal plane is allowed. The ion film 214 divides the interior of the plating tank 210 into a cathode region 211 and an anode region 212 in the vertical direction. The substrate 100 is located in the cathode region 211. The anode liquid inlet 216 and the anode liquid outlet 217 are both located in the anode region 212. Therefore, as shown in FIG. 5 , during the circulation process of the plating liquid in the anode region 212 between the plating tank 210 and the dissolution tank 220, the particles in the plating liquid can be isolated by the ion film 214. For example, solid particles with a diameter greater than 1 micron can be isolated from entering the cathode region 211 and then adhering to the surface of the substrate 100, affecting the substrate yield.

As shown in FIG5 , in some embodiments, an electroplating system 200 is also disclosed, and the electroplating system 200 includes the electroplating device 21 described above, and further includes a liquid supply device 22. The liquid supply device 22 is used to provide the electroplating device 21 with a plating liquid.

During the electroplating of the substrate 100, the metal ions in the electroplating solution will undergo a reduction reaction on the surface of the substrate 100 to form a metal coating, which will cause the metal ion concentration of the electroplating solution in the plating tank 210 to decrease.

In order to solve the above technical problems, in the embodiment shown in FIG5 , the liquid supply device 22 is equipped with a dissolving tank 220, a conveying pipeline 230, a powder metering and adding device 240, a current metering device 270 and a controller 290. Referring to FIG5 , the dissolving tank 220 is connected to the plating tank 210 through the conveying pipeline 230 to supply the plating solution; the powder metering and adding device 240 is connected to the dissolving tank 220 to supply metal powder to the dissolving tank 220 to replenish metal ions in the plating solution; the current metering device 270 is connected to the power supply 260 configured in the plating device 21 to detect the output power of the power supply 260, For example, the current metering device 270 may be an ampere-hour meter, which is an instrument that measures electrical quantity by the principle of integrating current over time. The controller 290 is electrically connected to the current metering device 270 and the powder metering and adding device 240, respectively, to control the powder metering and adding device 240 to quantitatively add metal powder to the dissolution tank 220 according to the output electrical quantity detected by the current metering device 270.

Since the theory that the consumption of metal ions is proportional to ampere-hours can be used to calculate the predetermined amount of metal powder that the powder metering and adding device 240 needs to add corresponding to the preset ampere-hour output of the power source 260, in the present application, the controller 290 replenishes metal ions into the plating solution by controlling the powder metering and adding device 240 to add a predetermined amount of metal powder every time the output power of the power source 260 measured by the current metering device 270 increases by the preset ampere-hour, thereby maintaining the stability of the metal ion concentration in the plating solution.

The metal powder may be copper oxide powder, and the plating solution in the dissolution tank 220 may contain components such as sulfuric acid, hydrochloric acid, copper sulfate, and water. The copper oxide powder may react with sulfuric acid or hydrochloric acid to dissolve in the dissolution tank 220 to form copper ions.

Specifically, in this example, the powder metering and adding device 240 includes a hopper 241 for storing metal powder, the hopper 241 having an input port 242 for inputting the metal powder into the hopper, and a discharge port 243 for quantitatively discharging the metal powder, the discharge port 243 is installed above the dissolution tank 220 and an electric drive control structure (not shown in the figure) is provided at the discharge port 243, such as a screw feed rod driven by a motor.

Specifically, in this example, the power source 260 is connected to the substrate 100 to be plated via the cathode line 261 and is connected to the insoluble anode 213 via the anode line 262 , so as to supply power to the insoluble anode 213 and the substrate 100 to be plated.

It should be noted that the plating tank 210 can be bidirectionally connected to the dissolving tank 220 via a delivery pipeline 230. The plating solution in the dissolving tank 220 is delivered to the plating tank 210 by one delivery pipeline 230, and the plating solution in the plating tank 210 is recovered to the dissolving tank 220 by another delivery pipeline 230, and is re-delivered to the plating tank 210 after replenishing metal ions, thereby realizing a bidirectional circulation flow of the plating solution. In addition, the plating tank 210 can also be unidirectionally connected to the dissolution tank 220 via a delivery pipeline 230. One delivery pipeline 230 delivers the plating liquid in the dissolution tank 220 to the plating tank 210, and another delivery pipeline 230 discharges the plating liquid in the plating tank 210 to other recovery devices other than the dissolution tank 220. The plating liquid in the dissolution tank 220 is also replenished by other devices to achieve unidirectional flow of the plating liquid.

Preferably, in this example, the liquid supply device further includes a buffer tank 250, which is connected between the plating tank 210 and the dissolving tank 220 and is used to temporarily store and mix the plating solution circulating between the dissolving tank 220 and the plating tank 210.

Referring to FIG5 , in this example, the delivery pipeline 230 is used to make the electroplating solution circulate between the plating tank 210, the buffer tank 250 and the dissolving tank 220 in the direction indicated by the arrow in FIG5 . Specifically, the delivery pipeline 230 includes a first input pipeline 231, a first output pipeline 232, a second input pipeline 233 and a second output pipeline 234. The first input pipeline 231 and the first output pipeline 232 are connected between the dissolving tank 220 and the buffer tank 250, and a liquid pump 235 is disposed on the first input pipeline 231; the second input pipeline 233 and the second output pipeline 234 are connected between the buffer tank 250 and the plating tank 210, and a liquid pump 238 is disposed on the second input pipeline 233. The first input pipeline 231 is used to transport the plating solution in the dissolving tank 220 to the buffer tank 250; the first output pipeline 232 is used to transport the plating solution in the buffer tank 250 back to the dissolving tank 220; the second input pipeline 233 is used to transport the plating solution in the buffer tank 250 to the plating tank 210; the second output pipeline 234 is used to transport the plating solution in the plating tank 210 back to the buffer tank 250. It should be noted that the second input pipeline 233 is equivalent to the plating solution supply pipeline 2160 in the embodiment shown in FIG. 3, the second output pipeline 234 is equivalent to the plating solution discharge pipeline 2170 in the embodiment shown in FIG. 3, and the liquid pump 238 is equivalent to the liquid pump 219 in the embodiment shown in FIG. 3.

In order to prevent impurities such as undissolved metal powder in the dissolving tank 220 from being transported into the plating tank 210 , a multi-stage filtering device 236 may be installed in the first input pipeline 231 .

Preferably, the electroplating system 200 further includes a concentration analysis device 280 for monitoring the metal ion concentration in the electroplating solution. The concentration analysis device 280 can be disposed in the buffer tank 250 as shown in FIG5 . It is understood that in other embodiments, the concentration analysis device 280 can be disposed in other tanks, such as in the plating tank 210 or the dissolution tank 220; and can also be disposed on the transport pipeline 230, such as on the second input pipeline 233 or the second output pipeline 234.

In addition, in order to fully dissolve the metal powder, a stirring device 221 may be additionally installed in the dissolution tank 220; in order to monitor the temperature of the electroplating solution, a temperature control device 222 may be additionally installed in the dissolution tank 220.

When the electroplating system 200 is performing the electroplating operation, it can keep the bubbles generated on the surface of the insoluble anode 213 away from the substrate 100, preventing the bubbles from floating up and adhering to the surface of the substrate 100, resulting in the formation of pits on the coating, which affects the quality of the substrate; it can also isolate the impurity particles in the plating solution through the ion film 214, preventing the impurity particles from entering the cathode area 211 and adhering to the surface of the substrate 100, which affects the substrate yield; it can also accurately adjust the metal ion concentration of the plating solution in the plating tank 210 to improve the controllability of the electroplating efficiency of the substrate 100.

It should be noted that the above embodiments can be freely combined as needed. The above are only preferred embodiments of the present invention. For ordinary technicians in this technical field, they can make some improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention.

100: substrate 200: electroplating system 21: electroplating device 210: plating tank 211: cathode zone 212: anode zone 213: insoluble anode 214: ion membrane 215: copper anode 216: anode liquid inlet 2160: electroplating liquid supply pipeline 217: anode liquid outlet 2170: electroplating liquid discharge pipeline 218: guide plate element 2180: guide plate 219,235,238: liquid pump 22: liquid supply device 220: dissolution tank 221: stirring device 222: temperature control device 230: transport pipeline 231: first input pipeline 232: first output pipeline 233: second input pipeline 234: second output pipeline 236: multi-stage filtering device 240: powder metering and adding device 241: hopper 242: input port 243: discharge port 250: buffer tank 260: power supply 261: cathode line 262: anode line 270: current metering device 280: concentration analysis device 290: controller d: first direction d1, d2: distance

In order to make the above and other purposes, features, advantages and embodiments of the present disclosure more clearly understandable, the attached drawings are described as follows: FIG. 1 is a schematic diagram of the initial state of the copper anode in the substrate electroplating process. FIG. 2 is a schematic diagram of the state of the copper anode after a period of electroplating in the substrate electroplating process. FIG. 3 is a schematic diagram of an embodiment of the electroplating device of the present invention. FIG. 4 is a schematic diagram of the three-dimensional structure of the guide plate element in the electroplating device of an embodiment of the present invention. FIG. 5 is a schematic diagram of an embodiment of the electroplating system of the present invention.

100: Substrate

21: Electroplating device

210: Plated groove

211:Cathode zone

212: Anode area

213: Insoluble anode

214: Ionic membrane

216: Anodic fluid inlet

2160: Plating liquid supply pipeline

217: Anode liquid outlet

2170: Plating liquid discharge pipeline

218: deflector element

219: Liquid pump

260: Power supply

d: First direction

Claims (12)

A plating device for plating metal onto a substrate, comprising: a plating tank for containing a plating solution and the substrate; a non-soluble anode disposed inside the plating tank and below the substrate; an anode liquid inlet for supplying the plating solution into the plating tank; an anode liquid outlet for discharging the plating solution from the plating tank; The anodic liquid inlet is higher than the insoluble anode and the anodic liquid outlet, so that the plating liquid flows between the anodic liquid inlet and the anodic liquid outlet in a first direction away from the substrate during the electroplating operation, and the flow rate of the plating liquid in the plating tank is configured so that the plating liquid exerts a force on the bubbles generated on the surface of the insoluble anode in the first direction, and the force is greater than the buoyancy of the bubbles, so that the bubbles are away from the substrate. An electroplating device as described in claim 1, wherein the bottom of the plating tank is conical or hemispherical, and the anodic liquid outlet is located at the center of the bottom. The electroplating device as described in claim 1 also includes a guide plate element arranged between the non-soluble anode and the anode liquid outlet. The electroplating device as described in claim 3, wherein the guide plate element includes a plurality of guide plates arranged at intervals, and the interval between at least two adjacent guide plates gradually decreases along the first direction to form a flow channel for the electroplating liquid. The electroplating device as described in claim 1 also includes an ion membrane arranged inside the plating tank, and the ion membrane divides the inside of the plating tank into a cathode region and an anode region along the vertical direction. The anode liquid inlet and the anode liquid outlet are both located in the anode region, and the substrate is located in the cathode region. The electroplating device as described in claim 1, wherein the plurality of anodic liquid inlets are arranged on the side wall of the plating tank, and the plurality of anodic liquid inlets are spaced apart and distributed at the same horizontal height of the plating tank. The electroplating device as described in claim 1 further comprises: a plating liquid supply pipeline, a plating liquid discharge pipeline and a liquid pump, wherein the plating liquid supply pipeline is connected to the anodic liquid inlet and is used to supply the plating liquid into the plating tank through the anodic liquid inlet; the plating liquid discharge pipeline is connected to the anodic liquid outlet and is used to discharge the plating liquid through the anodic liquid outlet; the liquid pump is installed in the plating liquid supply pipeline and/or the plating liquid discharge pipeline and is used to adjust the flow rate of the plating liquid in the plating tank. The electroplating device as described in claim 1 also includes: A power source for supplying power to the non-soluble anode and the substrate. A plating system, comprising the plating device described in any one of claims 1 to 8, and further comprising: A liquid supply device for providing plating liquid to the plating device. The electroplating system as described in claim 9, wherein the liquid supply device comprises: a dissolving tank for supplying electroplating liquid to the plating tank; a powder metering device for supplying metal powder to the dissolving tank; a current metering device for detecting the output power of the power source; a controller configured to control the powder metering device to add a predetermined amount of the metal powder when the current metering device detects that the output power of the power source increases by a preset ampere-hour. The electroplating system as described in claim 10 further includes: A buffer tank connected between the plating tank and the dissolving tank for temporarily storing and mixing the electroplating solution circulating between the dissolving tank and the plating tank. An electroplating system as described in claim 10, wherein the dissolution tank includes a stirring device and/or a temperature control device.