TW202409358A - Plating device and plating method including a plating tank, a substrate holder, a rotating mechanism, a raising-lowering mechanism and a control device - Google Patents
Plating device and plating method including a plating tank, a substrate holder, a rotating mechanism, a raising-lowering mechanism and a control device Download PDFInfo
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Abstract
Description
本發明係關於鍍覆裝置及鍍覆方法。The present invention relates to a coating device and a coating method.
作為鍍覆裝置,已知杯式及浸漬式等電鍍裝置。杯式的電鍍裝置中,係使被鍍覆面朝下而保持於基板固持器的基板(例如半導體晶圓)浸漬於鍍覆液,藉由在基板與陽極之間施加電壓,而在基板的表面上析出導電膜(參照專利文獻1及2)。浸漬式的電鍍裝置中,係在使被鍍覆面朝向側面的狀態下進行鍍覆處理(參照專利文獻3)。As plating apparatuses, cup-type and immersion-type electroplating apparatuses are known. In cup-type electroplating apparatuses, a substrate (e.g., a semiconductor wafer) held in a substrate holder with the surface to be plated facing downward is immersed in a plating liquid, and a conductive film is deposited on the surface of the substrate by applying a voltage between the substrate and the anode (see Patent Documents 1 and 2). In immersion-type electroplating apparatuses, plating is performed with the surface to be plated facing sideways (see Patent Document 3).
這種鍍覆裝置的基板固持器上設有用以接觸基板而供電的接觸構件。又,基板固持器具備密封構件,其在鍍覆處理中進行密封以使鍍覆液不會接觸到接觸構件。專利文獻3的電鍍裝置中,為了防止鍍覆液進入工件保持治具中容納接觸構件的密封空間內,而在密封空間中填充不含金屬鹽的液體。 [先前技術文獻] [專利文獻] The substrate holder of this plating device is provided with a contact member for contacting the substrate and supplying power. Furthermore, the substrate holder is provided with a sealing member that seals during the plating process so that the plating liquid does not come into contact with the contact member. In the electroplating apparatus of Patent Document 3, in order to prevent the plating liquid from entering the sealed space accommodating the contact member in the workpiece holding jig, the sealed space is filled with a liquid that does not contain a metal salt. [Prior technical literature] [Patent Document]
[專利文獻1]日本發明專利第7047200號公報 [專利文獻2]日本發明專利第7081063號公報 [專利文獻3]日本發明專利第6893142號公報 [Patent Document 1] Japanese Invention Patent No. 7047200 [Patent Document 2] Japanese Invention Patent No. 7081063 [Patent Document 3] Japanese Invention Patent No. 6893142
[發明所欲解決之課題][Problem to be solved by the invention]
基板固持器的內部存在鍍覆液之成分等混入物,則會引起金屬成分的堆積而導致接觸構件受損,此外其會成為因基板的種子層溶解而造成供電不均、進而導致鍍覆厚度不均勻的原因。期望可進行效率良好的鍍覆處理並且抑制因為基板固持器內部的混入物而對於接觸構件等造成不良的影響。If there are impurities such as components of the plating liquid inside the substrate holder, the metal components will accumulate and damage the contact members. In addition, it will become a cause of uneven power supply due to the dissolution of the seed layer of the substrate, which will lead to uneven plating thickness. It is desired to perform efficient plating processing and suppress the adverse effects on contact members caused by impurities inside the substrate holder.
本發明係鑒於上述問題而完成者。其目的之一係提出一種可抑制因基板固持器內部的混入物而對於接觸構件等造成不良影響的鍍覆方法及鍍覆裝置。 [解決課題之手段] The present invention was completed in view of the above-mentioned problems. One of its purposes is to propose a plating method and a plating device that can suppress adverse effects on contact members and the like caused by contaminants inside the substrate holder. [Means to solve the problem]
根據本發明的一型態,提出一種鍍覆裝置。鍍覆裝置具備:鍍覆槽,構成容納鍍覆液的態樣;基板固持器,構成保持基板的態樣,該基板是進行鍍覆處理的對象;旋轉機構,使前述基板固持器旋轉;升降機構,使前述基板固持器升降;及控制裝置;前述基板固持器具備:接觸構件,構成接觸前述基板而可供電的態樣;密封構件,構成將前述基板固持器與前述基板之間密封的態樣;緊壓構件,與前述密封構件對向配置,構成相對前述密封構件緊壓前述基板的態樣;液體保持部,內部具有前述接觸構件,前述液體保持部構成在前述基板固持器與前述基板之間由前述密封構件所密封時可保持液體的態樣;吐出口,其構成在前述液體保持部或是在前述基板固持器內部與前述液體保持部連通的空間開口,或是可配置於前述基板固持器的側邊,而吐出前述液體的態樣。According to one aspect of the present invention, a plating device is provided. The plating device includes: a plating tank configured to accommodate a plating liquid; a substrate holder configured to hold a substrate that is an object to be plated; a rotation mechanism that rotates the substrate holder; and a lifting mechanism. a mechanism to raise and lower the substrate holder; and a control device; the substrate holder is provided with: a contact member configured to contact the substrate and provide power; and a sealing member configured to seal between the substrate holder and the substrate. The pressing member is disposed opposite to the sealing member to press the substrate against the sealing member; the liquid holding part has the contact member inside, and the liquid holding part is formed between the substrate holder and the substrate The liquid can be maintained when sealed by the sealing member; the discharge port is formed in the liquid holding part or a space opening in the substrate holder that communicates with the liquid holding part, or may be disposed in the liquid holding part. The side of the substrate holder spits out the aforementioned liquid.
根據本發明的另一型態,提供一種鍍覆方法。此鍍覆方法係藉由鍍覆裝置進行鍍覆處理的鍍覆方法,該鍍覆裝置具備:鍍覆槽,構成容納鍍覆液的態樣;基板固持器,構成保持基板的態樣,該基板是進行鍍覆處理的對象;旋轉機構,使前述基板固持器旋轉;及升降機構,使前述基板固持器升降;前述基板固持器具備:接觸構件,構成接觸前述基板而可供電的態樣;密封構件,構成將前述基板固持器與前述基板之間密封的態樣;液體保持部,內部具有前述接觸構件,前述液體保持部構成在前述基板固持器與前述基板之間由前述密封構件所密封時可保持液體的態樣;及吐出口,在前述液體保持部或前述基板固持器中與前述液體保持部連通的空間開口,或是可配置於前述基板固持器的側邊;該鍍覆方法包含下述步驟:將前述基板安裝於前述基板固持器的步驟;從前述吐出口吐出前述液體的步驟;使前述基板固持器旋轉以使所吐出之前述液體流動至前述液體保持部或使前述液體在前述液體保持部中均勻分布的步驟;對於已安裝的前述基板進行前述鍍覆處理的步驟。According to another aspect of the present invention, a coating method is provided. The coating method is a coating method in which a coating process is performed by a coating device, wherein the coating device comprises: a coating tank configured to contain a coating liquid; a substrate holder configured to hold a substrate to be subjected to the coating process; a rotating mechanism configured to rotate the substrate holder; and a lifting mechanism configured to lift the substrate holder; the substrate holder comprises: a contact member configured to contact the substrate to supply electricity; a sealing member configured to seal the substrate holder and the substrate; a liquid holding portion having the contact member inside, the liquid holding portion being configured to be placed in the substrate holder; The coating method comprises the following steps: a step of mounting the substrate on the substrate holder; a step of discharging the liquid from the discharge port; a step of rotating the substrate holder so that the discharged liquid flows to the liquid holding portion or the liquid is evenly distributed in the liquid holding portion; and a step of performing the coating treatment on the mounted substrate.
以下參照圖式說明本發明的實施型態。以下說明的圖式中,對於相同或相當的構成要件,賦予相同的符號並省略重複的說明。The following is a description of the embodiments of the present invention with reference to the drawings. In the drawings described below, the same or equivalent components are given the same symbols and repeated descriptions are omitted.
第一實施型態 <鍍覆裝置的整體構成> 圖1係顯示第一實施型態之鍍覆裝置1000的整體構成的立體圖。圖2係顯示鍍覆裝置1000的整體構成的俯視圖。如圖1及圖2所示,鍍覆裝置1000具備裝載埠100、搬運機器人110、對準器120、預濕模組200、預浸模組300、鍍覆模組400、清洗模組500、旋轉沖洗乾燥機600、搬運裝置700及控制模組800。 First implementation type <Overall structure of plating equipment> FIG. 1 is a perspective view showing the overall structure of a plating device 1000 according to the first embodiment. FIG. 2 is a top view showing the overall structure of the plating apparatus 1000. As shown in FIGS. 1 and 2 , the plating device 1000 includes a loading port 100 , a transfer robot 110 , an aligner 120 , a prewet module 200 , a prepreg module 300 , a plating module 400 , and a cleaning module 500 . Rotary rinse dryer 600, transport device 700 and control module 800.
裝載埠100係用以使圖中未顯示的FOUP等匣盒中所收納之基板搬入鍍覆裝置1000,或是使基板從鍍覆裝置1000中搬出至匣盒的模組。本實施型態中,在水平方向上並排配置4台裝載埠100,但裝載埠100的數量及配置為任意。搬運機器人110係用以搬運基板的機器人,其構成在裝載埠100、對準器120及搬運裝置700之間收送基板的態樣。搬運機器人110及搬運裝置700,在搬運機器人110與搬運裝置700之間收送基板時,可透過圖中未顯示的暫置台進行基板的收送。The loading port 100 is a module for moving substrates stored in a cassette such as a FOUP not shown in the figure into the coating apparatus 1000, or moving substrates from the coating apparatus 1000 to the cassette. In the present embodiment, four loading ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the loading ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates, and is configured to receive and send substrates between the loading port 100, the aligner 120, and the transport device 700. When the transport robot 110 and the transport device 700 receive and send substrates between the transport robot 110 and the transport device 700, the substrates can be received and sent through a temporary table not shown in the figure.
對準器120,係用以將基板的定向平面或切口等的位置對準既定方向的模組。本實施型態中,在水平方向上並排配置2台對準器120,但對準器120的數量及配置為任意。預濕模組200中,以純水或脫氣水等處理液(預濕液)將鍍覆處理前的基板之被鍍覆面潤濕,藉此將基板表面上所形成之圖案內部的空氣取代為處理液。預濕模組200構成實施預濕處理的態樣,該預濕處理係藉由在鍍覆時將圖案內部的處理液取代為鍍覆液,便於對圖案內部供給鍍覆液。本實施型態中,在上下方向上並排配置2台預濕模組200,但預濕模組200的數量及配置為任意。The aligner 120 is a module used to align the position of the orientation plane or the cutout of the substrate in a predetermined direction. In this embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. In the prewet module 200, the coated surface of the substrate before the coating treatment is wetted with a treatment liquid (prewet liquid) such as pure water or degassed water, thereby replacing the air inside the pattern formed on the surface of the substrate with the treatment liquid. The prewet module 200 is configured to implement a prewet treatment, which is to replace the treatment liquid inside the pattern with the coating liquid during coating, so as to facilitate the supply of the coating liquid to the inside of the pattern. In this embodiment, two pre-wetting modules 200 are arranged side by side in the vertical direction, but the number and arrangement of the pre-wetting modules 200 are arbitrary.
預浸模組300,例如構成實施預浸處理的態樣,該預浸處理係以硫酸或鹽酸等處理液蝕刻存在於鍍覆處理前之基板被鍍覆面上所形成之種子層表面等高電阻氧化膜以將其去除,以清洗鍍覆底層表面或使其活性化。本實施型態中,在上下方向上並排配置2台預浸模組300,但預浸模組300的數量及配置為任意。預浸處理亦可省略,鍍覆裝置1000亦可不具備預浸模組。鍍覆模組400對於基板實施鍍覆處理。本實施型態中,設有兩組各12台、共24台的鍍覆模組400,各組之中在上下方向上並排配置3台且在水平方向上並排配置4台鍍覆模組400,但鍍覆模組400的數量及配置為任意。The prepreg module 300 is, for example, configured to perform a prepreg treatment using a treatment solution such as sulfuric acid or hydrochloric acid to etch a high-resistance surface such as a seed layer formed on the plated surface of the substrate before the plating treatment. Oxide film to remove it, to clean or activate the surface of the plated underlying layer. In this embodiment, two prepreg modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the prepreg modules 300 are arbitrary. The pre-impregnation process can also be omitted, and the plating device 1000 does not need to have a prepreg module. The plating module 400 performs a plating process on the substrate. In this embodiment, there are two groups of 24 plating modules 400 with 12 units each. In each group, 3 plating modules 400 are arranged side by side in the vertical direction and 4 units are arranged side by side in the horizontal direction. , but the number and configuration of the plating modules 400 are arbitrary.
清洗模組500構成實施清洗處理的態樣,該清洗處理係用以去除鍍覆處理後之基板上所殘留的鍍覆液等。本實施型態中,在上下方向上並排配置2台清洗模組500,但清洗模組500的數量及配置為任意。旋轉沖洗乾燥機600係用以使清洗處理後的基板高速旋轉以使其乾燥的模組。本實施型態中在上下方向上並排配置2台旋轉沖洗乾燥機,但旋轉沖洗乾燥機的數量及配置為任意。搬運裝置700係用以在鍍覆裝置1000內的多個模組間搬運基板的裝置。控制模組800係以控制鍍覆裝置1000之多個模組的方式構成,其可由例如具備與操作者之間的輸出入介面的一般電腦或專用電腦所構成。The cleaning module 500 is configured to perform a cleaning process for removing residual coating liquid and the like on the substrate after the coating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The rotary rinse dryer 600 is a module for rotating the substrate after the cleaning process at high speed to dry it. In this embodiment, two rotary rinse dryers are arranged side by side in the vertical direction, but the number and arrangement of the rotary rinse dryers are arbitrary. The transport device 700 is a device for transporting substrates between multiple modules in the coating device 1000. The control module 800 is configured to control multiple modules of the coating device 1000, and can be composed of, for example, a general computer or a dedicated computer having an input/output interface with an operator.
說明以鍍覆裝置1000所進行的一連串鍍覆處理的一例。首先,匣盒中所收納的基板搬入裝載埠100。然後搬運機器人110從裝載埠100的匣盒中取出基板,將基板搬運至對準器120。對準器120,使基板的定向平面或切口等的位置對準既定方向。搬運機器人110將經過對準器120對準方向之基板收送到搬運裝置700。An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, the substrate stored in the cassette is loaded into the loading port 100 . Then, the transport robot 110 takes out the substrate from the cassette in the loading port 100 and transports the substrate to the aligner 120 . The aligner 120 aligns the position of the orientation plane, cutout, etc. of the substrate in a predetermined direction. The transfer robot 110 delivers the substrates aligned in the direction by the aligner 120 to the transfer device 700 .
搬運裝置700,將從搬運機器人110接收的基板搬運至預濕模組200。預濕模組200對於基板實施預濕處理。搬運裝置700,將經實施預濕處理的基板搬運至預浸模組300。預浸模組300對於基板實施預浸處理。搬運裝置700將經實施預浸處理的基板搬運至鍍覆模組400。鍍覆模組400對於基板實施鍍覆處理。The transport device 700 transports the substrate received from the transport robot 110 to the pre-wetting module 200. The pre-wetting module 200 performs a pre-wetting treatment on the substrate. The transport device 700 transports the substrate that has been pre-wetted to the pre-preg module 300. The pre-preg module 300 performs a pre-preg treatment on the substrate. The transport device 700 transports the substrate that has been pre-preg to the coating module 400. The coating module 400 performs a coating treatment on the substrate.
搬運裝置700將經實施鍍覆處理的基板搬運至清洗模組500。清洗模組500對於基板實施清洗處理。搬運裝置700將經實施清洗處理的基板搬運至旋轉沖洗乾燥機600。旋轉沖洗乾燥機600對於基板實施乾燥處理。搬運裝置700將經實施乾燥處理之基板收送到搬運機器人110。搬運機器人110將從搬運裝置700接收的基板搬運至裝載埠100上的匣盒。最後從裝載埠100搬出收納有基板的匣盒。 <鍍覆模組的構成> The transport device 700 transports the plated substrate to the cleaning module 500 . The cleaning module 500 performs cleaning processing on the substrate. The transport device 700 transports the cleaned substrate to the spin rinse dryer 600 . The spin rinse dryer 600 performs a drying process on the substrate. The transport device 700 transports the dried substrate to the transport robot 110 . The transfer robot 110 transfers the substrate received from the transfer device 700 to the cassette on the loading port 100 . Finally, the cassette containing the substrate is unloaded from the loading port 100 . <Composition of plating module>
接著說明鍍覆模組400的構成。本實施型態中的24台鍍覆模組400為相同構成,因此僅說明1台鍍覆模組400。圖3係概略顯示本實施型態之鍍覆模組400之構成的縱剖面圖。如圖3所示,鍍覆模組400具備用以容納鍍覆液的鍍覆槽410。鍍覆槽410係具有圓筒狀側壁與圓形底壁的容器,在上部形成圓形的開口。又,鍍覆模組400具備配置在鍍覆槽410之上部開口外側的溢流槽405。溢流槽405係用以接收從鍍覆槽410的上部開口溢出之鍍覆液的容器。Next, the structure of the coating module 400 will be described. The 24 coating modules 400 in this embodiment have the same structure, so only one coating module 400 will be described. FIG. 3 is a longitudinal sectional view schematically showing the structure of the coating module 400 of this embodiment. As shown in FIG. 3 , the coating module 400 has a coating tank 410 for containing a coating liquid. The coating tank 410 is a container having a cylindrical side wall and a circular bottom wall, and a circular opening is formed at the top. In addition, the coating module 400 has an overflow tank 405 arranged on the outer side of the upper opening of the coating tank 410. The overflow tank 405 is a container for receiving the coating liquid overflowing from the upper opening of the coating tank 410.
鍍覆模組400具備隔膜420,其在上下方向將鍍覆槽410的內部隔開。鍍覆槽410的內部由隔膜420劃分成陰極區域422與陽極區域424。陰極區域422與陽極區域424中分別填充有鍍覆液。陽極區域424的鍍覆槽410之底面設有陽極430。陰極區域422中,與隔膜420對向地配置有阻力體450。阻力體450係用以達成使基板Wf之被鍍覆面Wf-a上的鍍覆處理均勻化的構件,其係由形成有多個孔的板狀構件構成。只要可以預期的精度進行鍍覆處理,則鍍覆槽410內亦可不配置阻力體450。The plating module 400 is provided with a diaphragm 420 that vertically separates the inside of the plating tank 410 . The interior of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by a separator 420 . The cathode region 422 and the anode region 424 are respectively filled with plating liquid. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode area 424. In the cathode region 422, a resistance body 450 is arranged to face the diaphragm 420. The resistor 450 is a member for uniformizing the plating process on the plated surface Wf-a of the substrate Wf, and is composed of a plate-shaped member in which a plurality of holes are formed. As long as the plating process can be performed with expected accuracy, the resistor 450 does not need to be disposed in the plating tank 410 .
作為鍍覆液,只要是含有構成鍍覆皮膜的金屬元素之離子的溶液即可,其具體例並未特別限定。作為鍍覆處理的一例,可使用銅鍍覆處理,作為鍍覆液的一例,可使用硫酸銅溶液。又,在本實施型態中,鍍覆液含既定的添加劑。然而,不限於此構成,鍍覆液亦可為不含添加劑的構成。The plating solution may be a solution containing ions of metal elements constituting the plating film, and specific examples thereof are not particularly limited. As an example of a plating process, a copper plating process can be used, and as an example of a plating liquid, a copper sulfate solution can be used. Furthermore, in this embodiment, the plating solution contains predetermined additives. However, it is not limited to this structure, and the plating liquid may also have a structure which does not contain additives.
陽極430的具體種類並未特別限定,可使用溶解陽極或不溶解陽極。在本實施型態中,係使用不溶解陽極作為陽極430。此不溶解陽極的具體種類並未特別限定,可使用鉑或氧化銥等。The specific type of anode 430 is not particularly limited, and either a dissolving anode or a non-dissolving anode may be used. In this embodiment, an insoluble anode is used as the anode 430 . The specific type of this insoluble anode is not particularly limited, and platinum, iridium oxide, etc. can be used.
又,鍍覆模組400,具備基板固持器440,其在使被鍍覆面Wf-a朝下的狀態保持基板Wf。鍍覆模組400具備第1升降機構442,用以使基板固持器440升降。第1升降機構442例如可由直動式的致動器等習知機構實現。又,鍍覆模組400具備旋轉機構446,其使基板固持器440旋轉,以使基板Wf繞著在被鍍覆面Wf-a之中央垂直延伸的虛擬旋轉軸旋轉。旋轉機構446例如可藉由馬達等習知機構實現。The coating module 400 also includes a substrate holder 440 that holds the substrate Wf in a state where the coating surface Wf-a faces downward. The coating module 400 includes a first lifting mechanism 442 that is used to lift the substrate holder 440. The first lifting mechanism 442 can be realized by a known mechanism such as a direct-acting actuator. The coating module 400 also includes a rotating mechanism 446 that rotates the substrate holder 440 so that the substrate Wf rotates around a virtual rotating shaft extending vertically in the center of the coating surface Wf-a. The rotating mechanism 446 can be realized by a known mechanism such as a motor.
鍍覆模組400構成下述態樣:使用第1升降機構442使基板Wf浸漬於陰極區域422的鍍覆液,一邊使用旋轉機構446使基板Wf旋轉,一邊在陽極430與基板Wf之間施加電壓,藉此對於基板Wf的被鍍覆面Wf-a實施鍍覆處理。The coating module 400 is configured as follows: the first lifting mechanism 442 is used to immerse the substrate Wf in the coating liquid in the cathode area 422, and the substrate Wf is rotated using the rotating mechanism 446 while a voltage is applied between the anode 430 and the substrate Wf, thereby performing a coating treatment on the coating surface Wf-a of the substrate Wf.
圖4係示意顯示基板固持器440的縱剖面圖。基板固持器440具備:支撐部490,支撐基板Wf;背板總成492,與支撐部490一起夾持基板Wf;及旋轉軸491,從背板總成492鉛直向上延伸。支撐部490具備:第1上部構件493;第2上部構件496;及支撐機構494,用以支撐基板Wf的被鍍覆面Wf-a之外周部。第1上部構件493保持第2上部構件496。圖示的例子中,第1上部構件493在略水平方向上延伸,第2上部構件496在略鉛直方向上延伸,但不限定於此等。支撐機構494係環狀構件,其中央具有用以使基板Wf之被鍍覆面Wf-a露出的開口,前述支撐機構494由第2上部構件496懸吊保持。第2上部構件496可為柱狀構件,其在支撐機構494的環狀上表面上設置1個以上。FIG. 4 is a schematic longitudinal cross-sectional view of a substrate holder 440. The substrate holder 440 includes: a support portion 490 for supporting a substrate Wf; a back plate assembly 492 for clamping the substrate Wf together with the support portion 490; and a rotation axis 491 extending vertically upward from the back plate assembly 492. The support portion 490 includes: a first upper member 493; a second upper member 496; and a support mechanism 494 for supporting the outer periphery of the plated surface Wf-a of the substrate Wf. The first upper member 493 holds the second upper member 496. In the illustrated example, the first upper member 493 extends in a substantially horizontal direction, and the second upper member 496 extends in a substantially vertical direction, but the present invention is not limited thereto. The support mechanism 494 is an annular member having an opening in the center for exposing the coated surface Wf-a of the substrate Wf. The support mechanism 494 is suspended and held by the second upper member 496. The second upper member 496 may be a columnar member, and one or more of the second upper members 496 are provided on the annular upper surface of the support mechanism 494.
背板總成492具備與支撐機構494一起夾持基板Wf的圓板狀浮動板492-2。浮動板492-2配置於基板Wf之被鍍覆面Wf-a的背面側。又,背板總成492具備配置於浮動板492-2上方的圓板狀背板492-1。又,背板總成492具備:浮動機構492-4,在往基板Wf背面離開的方向上拉抬浮動板492-2;按壓機構492-3,抵抗來自浮動機構492-4的拉抬力而將浮動板492-2按壓於基板Wf的背面。The back plate assembly 492 includes a disk-shaped floating plate 492-2 that holds the substrate Wf together with the support mechanism 494. The floating plate 492-2 is arranged on the back side of the plated surface Wf-a of the substrate Wf. In addition, the back plate assembly 492 includes a disc-shaped back plate 492-1 arranged above the floating plate 492-2. In addition, the back plate assembly 492 is provided with: a floating mechanism 492-4 that lifts the floating plate 492-2 in a direction away from the back surface of the substrate Wf; and a pressing mechanism 492-3 that resists the pulling force from the floating mechanism 492-4. The floating plate 492-2 is pressed against the back surface of the substrate Wf.
浮動機構492-4包含壓縮彈簧,其安裝於從浮動板492-2貫通背板492-1而向上延伸的軸的上端與背板492-1之間。浮動機構492-4構成下述態樣:藉由壓縮彈簧的壓縮反作用力,透過軸將浮動板492-2向上抬升,朝向從基板Wf背面離開的方向拉抬。以下的圖中適當省略浮動機構492-4的圖示。The floating mechanism 492-4 includes a compression spring, which is installed between the upper end of a shaft extending upward from the floating plate 492-2 through the backing plate 492-1 and the backing plate 492-1. The floating mechanism 492-4 is configured in such a manner that the floating plate 492-2 is lifted upward through the shaft by the compression reaction force of the compression spring, and is pulled in a direction away from the back surface of the substrate Wf. In the following figures, the illustration of the floating mechanism 492-4 is appropriately omitted.
按壓機構492-3構成下述態樣:透過形成於背板492-1內部的未圖示之流路對於浮動板492-2供給流體,藉此將浮動板492-2向下按壓。按壓機構492-3,在流體供給時,以比來自浮動機構492-4之拉抬力更強的力將基板Wf朝向支撐機構494按壓。浮動板492-2係緊壓構件,其構成下述態樣:與後述密封構件494-2(圖5)對向配置,相對於密封構件494-2緊壓基板Wf。The pressing mechanism 492-3 is configured to press the floating plate 492-2 downward by supplying fluid to the floating plate 492-2 through a flow path (not shown) formed inside the back plate 492-1. The pressing mechanism 492-3 presses the substrate Wf toward the supporting mechanism 494 with a force stronger than the pulling force from the floating mechanism 492-4 during fluid supply. The floating plate 492-2 is a pressing member arranged to face a sealing member 494-2 (FIG. 5) described below, and is configured to press the substrate Wf against the sealing member 494-2.
第1升降機構442使基板固持器440整體上升及下降(箭號A10)。鍍覆模組400更具備第2升降機構443。第2升降機構443係由直動式致動器等習知的機構所驅動,相對於支撐部490,使旋轉軸491及背板總成492上升及下降(箭號A20)。旋轉軸491上形成有用以吐出液體的吐出口60及與吐出口60連接而使液體可在其中流動的供給流路50。關於吐出口60於後段中詳述。The first lifting mechanism 442 raises and lowers the entire substrate holder 440 (arrow A10). The plating module 400 further has a second lifting mechanism 443. The second lifting mechanism 443 is driven by a conventional mechanism such as a linear actuator, and raises and lowers the rotating shaft 491 and the back plate assembly 492 relative to the support portion 490 (arrow A20). The rotating shaft 491 is formed with a discharge port 60 for discharging liquid and a supply channel 50 connected to the discharge port 60 so that the liquid can flow therethrough. The discharge port 60 will be described in detail later.
圖5係示意性放大顯示基板固持器440之部分構成的縱剖面圖。支撐機構494包含環狀支撐構件494-1,其用以支撐基板Wf的被鍍覆面Wf-a的外周部。支撐構件494-1具有凸緣494-1a,其突出至背板總成492(浮動板492-2)之下表面的外周部。凸緣494-1a之上配置有環狀密封構件494-2,其構成密封基板Wf的態樣。密封構件494-2係具有彈性的構件。支撐構件494-1,隔著密封構件494-2支撐基板Wf之被鍍覆面Wf-a的外周部。在對於基板Wf進行鍍覆處理時,藉由以密封構件494-2與浮動板492-2夾持基板Wf,而將支撐構件494-1(基板固持器440)與基板Wf之間密封。FIG5 is a schematic enlarged longitudinal sectional view showing a partial structure of the substrate holder 440. The supporting mechanism 494 includes an annular supporting member 494-1, which is used to support the outer periphery of the coated surface Wf-a of the substrate Wf. The supporting member 494-1 has a flange 494-1a, which protrudes to the outer periphery of the lower surface of the back plate assembly 492 (floating plate 492-2). An annular sealing member 494-2 is arranged on the flange 494-1a, which is configured to seal the substrate Wf. The sealing member 494-2 is an elastic member. The supporting member 494-1 supports the outer periphery of the coated surface Wf-a of the substrate Wf through the sealing member 494-2. When the substrate Wf is subjected to the plating process, the substrate Wf is sandwiched between the sealing member 494-2 and the floating plate 492-2, thereby sealing the space between the supporting member 494-1 (substrate holder 440) and the substrate Wf.
支撐機構494具備:環狀台座494-3,安裝於支撐構件494-1的內周面;環狀導電構件494-5,安裝於台座494-3的上表面。台座494-3,例如係不銹鋼等具有導電性的構件。導電構件494-5係具有導電性的環狀構件,例如可含銅或其他金屬。The support mechanism 494 includes an annular base 494-3 attached to the inner peripheral surface of the support member 494-1, and an annular conductive member 494-5 attached to the upper surface of the base 494-3. The base 494-3 is made of a conductive member such as stainless steel. The conductive member 494-5 is an annular member with conductivity, and may contain copper or other metals, for example.
支撐機構494具備接觸構件494-4,其構成與基板Wf接觸而可供電的態樣。接觸構件494-4係藉由螺絲等環狀地安裝於台座494-3的內周面。支撐構件494-1隔著台座494-3保持接觸構件494-4。接觸構件494-4係具有導電性的構件,其用以從圖中未顯示的電源對於基板固持器440上保持的基板Wf供電。接觸構件494-4具有:多個基板接點494-4a,與基板Wf之被鍍覆面Wf-a的外周部接觸;及本體部494-4b,相較於基板接點494-4a更往上方延伸。The supporting mechanism 494 has a contact member 494-4, which is configured to be in contact with the substrate Wf and to supply electricity. The contact member 494-4 is annularly mounted on the inner peripheral surface of the base 494-3 by means of screws or the like. The supporting member 494-1 holds the contact member 494-4 via the base 494-3. The contact member 494-4 is a conductive member, which is used to supply electricity to the substrate Wf held on the substrate holder 440 from a power source not shown in the figure. The contact member 494-4 has: a plurality of substrate contacts 494-4a, which are in contact with the outer peripheral portion of the coated surface Wf-a of the substrate Wf; and a main body 494-4b, which extends upwards compared to the substrate contacts 494-4a.
基板固持器440具備液體保持部494L,其構成下述態樣:在藉由密封構件494-2將基板Wf密封時,可保持基板固持器440內部的液體。液體保持部494L,其內部配置有接觸構件494-4。液體保持部494L可包含夾住接觸構件494-4而對向的多個側壁與在接觸構件494-4下方的底壁而構成。圖示的例子中,液體保持部494L係包含圓板狀浮動板492-2的外側面、支撐構件494-1的內側面及底面而構成。藉此,在以密封構件494-2將基板固持器440與基板Wf之間密封時,以少量的液體即可效率良好地被覆接觸構件494-4。此處,浮動板492-2的外側面存在於密封構件494-2的上方,在略鉛直方向上延伸。所謂的支撐構件494-1之底面,係指形成於在基板固持器440的徑向上往內突出之凸緣494-1a的上方並沿著凸緣494-1a延伸的面。The substrate holder 440 has a liquid holding portion 494L, which is configured as follows: when the substrate Wf is sealed by the sealing member 494-2, the liquid inside the substrate holder 440 can be held. The liquid holding portion 494L has a contact member 494-4 disposed therein. The liquid holding portion 494L may include a plurality of side walls that are opposite to each other and sandwich the contact member 494-4, and a bottom wall below the contact member 494-4. In the example shown in the figure, the liquid holding portion 494L includes the outer side surface of the circular plate-shaped floating plate 492-2, the inner side surface and the bottom surface of the supporting member 494-1. Thus, when the sealing member 494-2 is used to seal the substrate holder 440 and the substrate Wf, the contact member 494-4 can be efficiently covered with a small amount of liquid. Here, the outer side surface of the floating plate 492-2 exists above the sealing member 494-2 and extends in a substantially vertical direction. The so-called bottom surface of the supporting member 494-1 refers to a surface formed above the flange 494-1a protruding inward in the radial direction of the substrate holder 440 and extending along the flange 494-1a.
基板固持器440上未安裝有基板Wf時,液體會通過浮動板492-2與密封構件494-2之間隙而流下。若夾在浮動板492-2與密封構件494-2之間的基板Wf被密封,則液體保持部494L可保持液體而防止這種液體流下的情況。另外,構成液體保持部494L的底壁形成有凹部,在基板固持器440上未安裝有基板Wf時,亦可在液體保持部494L中保持少量的液體。When the substrate Wf is not mounted on the substrate holder 440, the liquid will flow down through the gap between the floating plate 492-2 and the sealing member 494-2. If the substrate Wf sandwiched between the floating plate 492-2 and the sealing member 494-2 is sealed, the liquid holding portion 494L can hold the liquid and prevent the liquid from flowing down. In addition, a recess is formed in the bottom wall constituting the liquid holding portion 494L. When the substrate Wf is not mounted on the substrate holder 440, a small amount of liquid can be held in the liquid holding portion 494L.
圖6係用以說明基板固持器440內部之空間的概念圖。基板固持器440的內部形成有用以吐出液體L1的吐出口60。吐出口60在液體保持部494L或在基板固持器440內部與液體保持部494L連通的空間開口。圖示的例中,吐出口60形成於浮動板492-2的上方,在浮動板492-2上方的內部空間S1開口。圖示的例中,吐出口60形成於旋轉軸491,但並不限定於此。吐出口60,例如亦可形成於背板492-1中位於浮動板492-2上方的位置。從吐出口60吐出液體L1,可由控制模組800控制供給流路50上設置的未圖示之閥或泵等來進行。FIG6 is a conceptual diagram for explaining the space inside the substrate holder 440. A discharge port 60 for discharging liquid L1 is formed inside the substrate holder 440. The discharge port 60 opens in the liquid holding portion 494L or in a space inside the substrate holder 440 that is connected to the liquid holding portion 494L. In the illustrated example, the discharge port 60 is formed above the floating plate 492-2 and opens in the internal space S1 above the floating plate 492-2. In the illustrated example, the discharge port 60 is formed on the rotating shaft 491, but is not limited to this. The discharge port 60 may, for example, be formed at a position above the floating plate 492-2 in the back plate 492-1. The discharge of liquid L1 from the discharge port 60 may be performed by the control module 800 controlling a valve or pump, not shown, disposed on the supply flow path 50.
基板固持器440構成從吐出口60所吐出之液體L1供給至液體保持部494L的態樣。供給至液體保持部494L的液體L1被覆接觸構件494-4的至少一部分。液體L1只要有保護接觸構件494-4的效果,則其組成並無特別限定。液體L1較佳係具有以既定閾值以下或小於既定閾值的導電度等,具有以既定閾值為基準的低導電度,或是經過脫氣處理。The substrate holder 440 is configured to supply the liquid L1 discharged from the discharge port 60 to the liquid holding portion 494L. The liquid L1 supplied to the liquid holding part 494L covers at least a part of the contact member 494-4. The composition of the liquid L1 is not particularly limited as long as it has the effect of protecting the contact member 494-4. The liquid L1 preferably has a conductivity below a predetermined threshold or less than a predetermined threshold, has a low conductivity based on a predetermined threshold, or has been degassed.
液體L1的導電度較佳為50μS/cm以下,更佳為10μS/cm以下。若導電度高的液體存在於接觸構件494-4及基板Wf的周圍,則會導致金屬成分堆積而成為損傷的原因。又,除了通過接觸構件494-4與基板Wf之接觸部分的電流以外,分路電流不通過該接觸部分而是通過該液體而在基板Wf的種子層與接觸構件494-4之間流動。此時具有因種子層的銅離子化而溶出等導致種子層變薄的情況。若種子層變薄而電阻增加,則會發生供電不均。若液體L1的導電度低則可抑制這種不良的影響。另外,關於分路電流的詳細內容,請參照上述的專利文獻2。The conductivity of liquid L1 is preferably 50 μS/cm or less, more preferably 10 μS/cm or less. If a highly conductive liquid exists around the contact member 494-4 and the substrate Wf, metal components may accumulate and cause damage. In addition to the current passing through the contact portion between the contact member 494-4 and the substrate Wf, the shunt current does not pass through the contact portion but flows between the seed layer of the substrate Wf and the contact member 494-4 through the liquid. At this time, the seed layer may become thin due to ionization and elution of copper in the seed layer. If the seed layer becomes thinner and the resistance increases, uneven power supply will occur. If the conductivity of the liquid L1 is low, this adverse effect can be suppressed. In addition, regarding the details of the shunt current, please refer to the above-mentioned Patent Document 2.
若含氧液體存在於接觸構件494-4及基板Wf的周圍,則會進行氧離子化而發生種子層在該液體中溶出的局部電池效果。例如,若種子層的銅將電子給與溶存氧,則在從溶存氧生成氫氧化物離子的同時,銅成為銅離子而溶出。因為局部電池效果,種子層會變薄而電阻增加,進而發生供電不均。若對於液體L1進行脫氣處理,可抑制這種不良的影響。另外,關於局部電池效果的詳細內容,請參照上述專利文獻2。If an oxygen-containing liquid exists around the contact member 494-4 and the substrate Wf, oxygen ionization will occur and a local battery effect will occur in which the seed layer dissolves in the liquid. For example, if the copper in the seed layer donates electrons to the dissolved oxygen, the copper will become copper ions and dissolve while hydroxide ions are generated from the dissolved oxygen. Due to the local battery effect, the seed layer will become thinner and the resistance will increase, resulting in uneven power supply. If the liquid L1 is degassed, this adverse effect can be suppressed. In addition, for details on the local battery effect, please refer to the above-mentioned patent document 2.
從此等的觀點來看,液體L1較佳為純水、離子交換水或脫氣水。From these viewpoints, liquid L1 is preferably pure water, ion-exchanged water, or degassed water.
本實施型態中,在基板固持器440與基板Wf之間密封時,可將液體L保持於液體保持部494L。液體保持部494L,相較於專利文獻2中的接觸構件附近,可保持更多的液體L1,因此接觸構件494-4附近的鍍覆液等的混入物被稀釋為更低濃度。藉此,可抑制因混入物導致如上述之不良的影響。In this embodiment, when the substrate holder 440 and the substrate Wf are sealed, the liquid L can be held in the liquid holding portion 494L. The liquid holding portion 494L can hold more liquid L1 than the vicinity of the contact member in Patent Document 2, so that the mixed substances such as the coating liquid near the contact member 494-4 are diluted to a lower concentration. Thereby, the adverse effects such as those described above caused by the mixed substances can be suppressed.
圖7係說明控制模組800的概念圖。控制模組800發揮作為控制鍍覆模組400之動作的控制裝置之功能。控制模組800具備微電腦等的電腦,此電腦具備作為處理器的CPU(Central Processing Unit)801及作為暫存或非暫存之記憶媒體的記憶體802等。控制模組800係藉由CPU801運作而控制鍍覆模組400的被控制部。CPU801可藉由執行記憶體802中儲存的程式或是將未圖示之記憶媒體中儲存的程式讀入記憶體802中並執行以進行各種處理。程式包含例如執行運送機器人、運送裝置的運送控制、各處理模組中之處理的控制、鍍覆模組400中之鍍覆處理的控制、液體L1相關處理之控制的程式、檢測各種設備異常的程式。作為記憶媒體,例如可使用電腦可讀取之ROM、RAM、快閃記憶體等記憶體、硬碟、CD-ROM、DVD-ROM或軟碟等碟狀記憶媒體、或固態硬碟等習知者。控制模組800,構成可與統一控制鍍覆裝置1000及其他相關裝置的圖中未顯示之上位控制器通訊的態樣,其可與上位控制器所具有的資料庫之間進行資料傳輸。控制模組800的一部份或全部的功能可由ASIC等硬體構成。控制模組800的一部份或全部的功能亦可由PLC、定序器等構成。控制模組800的一部份或全部可配置於鍍覆裝置1000的框體內部及/或外部。控制模組800的一部份或全部可以有線及/或無線的方式與鍍覆裝置1000的各部連結而能夠進行通訊。FIG7 is a conceptual diagram illustrating the control module 800. The control module 800 functions as a control device for controlling the operation of the coating module 400. The control module 800 has a computer such as a microcomputer, and the computer has a CPU (Central Processing Unit) 801 as a processor and a memory 802 as a temporary or non-temporary storage medium. The control module 800 controls the controlled part of the coating module 400 by the operation of the CPU 801. The CPU 801 can perform various processes by executing a program stored in the memory 802 or reading a program stored in a storage medium not shown in the figure into the memory 802 and executing it. The program includes, for example, a program for executing a transport robot, transport control of a transport device, control of processes in each processing module, control of coating processes in the coating module 400, control of processes related to liquid L1, and a program for detecting abnormalities in various devices. As a storage medium, for example, a computer-readable memory such as ROM, RAM, flash memory, a hard disk, a CD-ROM, a DVD-ROM, or a floppy disk, or a solid state hard disk, etc., which are known, can be used. The control module 800 is configured to communicate with an upper controller (not shown in the figure) that uniformly controls the coating device 1000 and other related devices, and it can transmit data with a database possessed by the upper controller. Part or all of the functions of the control module 800 can be constituted by hardware such as ASIC. Part or all of the functions of the control module 800 may also be constituted by a PLC, a sequencer, etc. Part or all of the control module 800 may be disposed inside and/or outside the frame of the coating device 1000. Part or all of the control module 800 may be connected to various parts of the coating device 1000 in a wired and/or wireless manner to enable communication.
圖8至圖13係說明本實施型態之鍍覆方法,其係依時序顯示基板固持器440之狀態的縱剖面圖。此鍍覆方法係由控制模組800的控制來進行。8 to 13 illustrate the coating method of this embodiment, which are longitudinal cross-sectional views showing the state of the substrate holder 440 in time sequence. The coating method is performed under the control of the control module 800.
圖8及圖9係示意顯示將基板Wf安裝於基板固持器440的步驟。圖8係顯示基板Wf配置於支撐構件494之狀態的圖。圖示的例子中,藉由第2升降機構443,使包含浮動板492-2的背板總成492上升。藉此,在支撐構件494與浮動板492-2之間隙變寬的狀態下,基板Wf配置於支撐構件494。8 and 9 schematically show the steps of mounting the substrate Wf on the substrate holder 440. FIG. 8 is a diagram showing a state where the substrate Wf is arranged on the supporting member 494. In the example shown in the figure, the back plate assembly 492 including the floating plate 492-2 is raised by the second lifting mechanism 443. Thus, the substrate Wf is arranged on the supporting member 494 in a state where the gap between the supporting member 494 and the floating plate 492-2 is widened.
圖9係顯示基板Wf被密封之狀態的圖。藉由第2升降機構443使背板總成492下降。浮動板492-2將基板Wf緊壓於支撐構件494,而將基板固持器440與基板Wf之間密封。Fig. 9 is a diagram showing a state where the substrate Wf is sealed. The back plate assembly 492 is lowered by the second lifting mechanism 443. The floating plate 492-2 presses the substrate Wf against the supporting member 494, thereby sealing the space between the substrate holder 440 and the substrate Wf.
圖10係示意顯示吐出液體L1之步驟的圖。從浮動板492-2的上方的吐出口60所吐出之液體L1,配置於浮動板492-2的背面BS上。背面BS,係浮動板492-2中與配置有基板Wf之一側的相反側的面。如此,控制模組800構成下述態樣:在基板Wf由密封構件494-2密封時,透過吐出口60將液體L1吐出至液體保持部494L或與液體保持部494L連通的空間。藉此,可將液體L1儲存於可保持液體L1之狀態的液體保持部494L,降低混入物的濃度,而可抑制因混入物對於接觸構件494-4等造成不良的影響。又,因為係在安裝基板Wf之後,對於接觸構件494-4供給液體L1,因此對於在安裝基板Wf時鍍覆液之混入及因密封構件494-2洩漏所致的鍍覆液之混入而言,亦可有效地抑制上述不良的影響。圖示的例子中,因為吐出口60形成於浮動板492-2的上方,故可縮短至吐出口60的供給流路50而可簡易化。又,藉由構成朝向背面BS吐出液體L1的態樣,而可利用旋轉機構446對於接觸構件494-4供給液體L1。FIG. 10 is a diagram schematically showing the steps of discharging the liquid L1. The liquid L1 discharged from the discharge port 60 above the floating plate 492-2 is arranged on the back surface BS of the floating plate 492-2. The back surface BS is the surface of the floating plate 492-2 opposite to the side where the substrate Wf is disposed. In this way, the control module 800 is configured to eject the liquid L1 through the ejection port 60 to the liquid holding part 494L or a space connected to the liquid holding part 494L when the substrate Wf is sealed by the sealing member 494-2. Thereby, the liquid L1 can be stored in the liquid holding portion 494L that can maintain the state of the liquid L1, thereby reducing the concentration of the contaminants and suppressing adverse effects of the contaminants on the contact member 494-4 and the like. In addition, since the liquid L1 is supplied to the contact member 494-4 after the substrate Wf is mounted, the mixing of the plating liquid during the mounting of the substrate Wf and the mixing of the plating liquid due to leakage of the sealing member 494-2 , can also effectively suppress the above adverse effects. In the illustrated example, since the discharge port 60 is formed above the floating plate 492-2, the supply flow path 50 to the discharge port 60 can be shortened and simplified. Furthermore, by configuring the liquid L1 to be discharged toward the back surface BS, the liquid L1 can be supplied to the contact member 494-4 using the rotation mechanism 446.
圖11及圖12係示意顯示使基板固持器440旋轉之步驟的圖。旋轉機構446,係以與被鍍覆面Wf-a交叉的軸作為旋轉軸而使基板固持器440旋轉(箭號A30)。如圖11所示,藉由此旋轉的離心力,浮動板492-2的背面BS上的液體L1在徑向上向外流動(箭號A40)。液體L1流動至形成於浮動板492-2外側的液體保持部494L。圖12係顯示液體L1因為在旋轉中流動而到達液體保持部494L進而保持於液體保持部494L的圖。又,藉由此旋轉,可使液體L1更均勻地分布於液體保持部494L中。FIG. 11 and FIG. 12 are diagrams schematically showing the steps of rotating the substrate holder 440. The rotating mechanism 446 rotates the substrate holder 440 with the axis intersecting the coated surface Wf-a as the rotation axis (arrow A30). As shown in FIG. 11, the liquid L1 on the back surface BS of the floating plate 492-2 flows radially outward (arrow A40) by the centrifugal force of this rotation. The liquid L1 flows to the liquid retaining portion 494L formed on the outer side of the floating plate 492-2. FIG. 12 is a diagram showing that the liquid L1 reaches the liquid retaining portion 494L and is retained in the liquid retaining portion 494L due to the flow during the rotation. In addition, by this rotation, the liquid L1 can be distributed more evenly in the liquid retaining portion 494L.
圖13係示意顯示將基板固持器440浸漬於鍍覆液以進行鍍覆處理之步驟的圖。第1升降機構442,使基板固持器440往鍍覆槽410下降,至少使基板Wf浸漬於鍍覆液。一邊使基板Wf浸漬於鍍覆液,一邊在基板Wf與陽極430之間施加電壓,以進行鍍覆處理。在基板固持器440的浸漬及鍍覆處理的期間,液體L皆保持於液體保持部494L。將基板固持器440浸漬於鍍覆液以進行鍍覆處理時,亦可停止基板固持器440的旋轉,但從使所形成之鍍覆的厚度均勻的觀點來看,較佳係以既定的轉速旋轉。FIG. 13 is a diagram schematically showing the step of immersing the substrate holder 440 in the coating liquid for coating treatment. The first lifting mechanism 442 lowers the substrate holder 440 to the coating tank 410 to immerse at least the substrate Wf in the coating liquid. While the substrate Wf is immersed in the coating liquid, a voltage is applied between the substrate Wf and the anode 430 to perform the coating treatment. During the immersion of the substrate holder 440 and the coating treatment, the liquid L is held in the liquid holding portion 494L. When the substrate holder 440 is immersed in the coating liquid for coating treatment, the rotation of the substrate holder 440 may be stopped. However, from the viewpoint of making the thickness of the coating formed uniform, it is preferably rotated at a predetermined rotation speed.
圖14係示意顯示保持液體L1的液體保持部494L的基板固持器440之放大剖面圖。液體保持部494L中的液體L1之液面高度HL1較佳係在基板Wf之被鍍覆面Wf-a的高度H1與浮動板492-2之背面BS的高度H2之間。若液體L1的液面高度HL1低於高度H1,則無法充分被覆接觸構件494-4,會因為混入物而造成不良的影響。又,會因為液體L1的液面與被鍍覆面Wf-a之間的距離近,而容易因為從液面溶入的氧導致種子層氧化。若液體L1的液面高度HL1高於高度H2,除了因為液體L1的質量導致旋轉變得沒效率以外,還在將基板Wf從基板固持器440卸除時會有大量的液體L1流下,而有稀釋鍍覆液的疑慮。控制模組800較佳係構成吐出預設量之液體L1的態樣。此量較佳係以下述方式設定:在液體保持部494L中,液體L1的液面成為在基板Wf之下表面的被鍍覆面Wf-a與浮動板492-2之上表面的背面BS之間的高度。FIG. 14 is an enlarged cross-sectional view schematically showing a substrate holder 440 of a liquid holding portion 494L holding liquid L1. The liquid level HL1 of the liquid L1 in the liquid holding portion 494L is preferably between the height H1 of the coated surface Wf-a of the substrate Wf and the height H2 of the back surface BS of the floating plate 492-2. If the liquid level HL1 of the liquid L1 is lower than the height H1, the contact member 494-4 cannot be fully coated, and an adverse effect may be caused by mixed substances. In addition, since the distance between the liquid level of the liquid L1 and the coated surface Wf-a is close, the seed layer may be easily oxidized due to oxygen dissolved from the liquid surface. If the liquid level HL1 of the liquid L1 is higher than the height H2, in addition to the inefficiency of the rotation due to the mass of the liquid L1, a large amount of the liquid L1 will flow down when the substrate Wf is removed from the substrate holder 440, and there is a concern that the coating liquid may be diluted. The control module 800 is preferably configured to discharge a preset amount of liquid L1. This amount is preferably set in the following manner: In the liquid holding portion 494L, the liquid level of the liquid L1 becomes the height between the coated surface Wf-a on the lower surface of the substrate Wf and the back surface BS on the upper surface of the floating plate 492-2.
圖15係顯示本實施型態之鍍覆方法之流程的流程圖。步驟S101中,基板Wf安裝於基板固持器440。步驟S101之後進行步驟S102。步驟S102中,液體L1吐出至作為緊壓構件的浮動板492-2之背面BS。步驟S102之後進行步驟S103。步驟S103中,基板固持器440旋轉。步驟S103之後進行步驟S104。步驟S104中,基板固持器440浸漬於鍍覆液。步驟S104之後進行步驟S105。步驟S105中,對於基板Wf進行鍍覆處理。步驟S105之後,基板Wf從基板固持器440被卸除而被運送至清洗模組500。FIG. 15 is a flow chart showing the flow of the plating method of this embodiment. In step S101, the substrate Wf is mounted on the substrate holder 440. After step S101, step S102 is performed. In step S102, the liquid L1 is discharged to the back surface BS of the floating plate 492-2 as a pressing member. After step S102, step S103 is performed. In step S103, the substrate holder 440 rotates. After step S103, step S104 is performed. In step S104, the substrate holder 440 is immersed in the plating liquid. After step S104, step S105 is performed. In step S105, a plating process is performed on the substrate Wf. After step S105, the substrate Wf is removed from the substrate holder 440 and transported to the cleaning module 500.
本實施型態的鍍覆裝置1000具備基板固持器440與旋轉機構446,基板固持器440具備:液體保持部494L,內部具有接觸構件494-4,液體保持部494L構成在藉由密封構件494-2將基板固持器440與基板Wf之間密封時,可保持液體L1的態樣;及吐出口60,構成在液體保持部494L或在基板固持器440的內部與液體保持部494L連通之空間開口,吐出液體L1的態樣。藉此可提供能夠抑制因基板固持器440內部之混入物對於接觸構件494-4等造成不良影響的鍍覆裝置1000。又,調節基板固持器440內部之液體L1的量,可有效率地進行鍍覆處理。再者,相較於從基板固持器的外部朝向接觸構件噴射液體的情況,可減少在對於接觸構件494-4供給液體L1時,液體L1流下而稀釋鍍覆液的疑慮。The coating device 1000 of this embodiment includes a substrate holder 440 and a rotating mechanism 446. The substrate holder 440 includes: a liquid holding portion 494L having a contact member 494-4 therein, the liquid holding portion 494L being configured to hold the liquid L1 when the substrate holder 440 and the substrate Wf are sealed by the sealing member 494-2; and a discharge port 60 being configured to discharge the liquid L1 by opening in the liquid holding portion 494L or in a space communicating with the liquid holding portion 494L inside the substrate holder 440. Thus, the coating device 1000 can be provided which can suppress the adverse effects of the mixed matter inside the substrate holder 440 on the contact member 494-4 and the like. Furthermore, the coating process can be efficiently performed by adjusting the amount of liquid L1 inside the substrate holder 440. Furthermore, compared with the case where the liquid is sprayed toward the contact member from the outside of the substrate holder, the concern that the liquid L1 flows down and dilutes the coating liquid when the liquid L1 is supplied to the contact member 494-4 can be reduced.
本實施型態之鍍覆方法,係以上述鍍覆裝置1000所進行之鍍覆方法,其包含下述步驟:將基板Wf安裝於基板固持器440的步驟;從吐出口60吐出液體L1的步驟;使基板固持器440旋轉以使所吐出之液體L1流動至液體保持部494L或使液體L1在液體保持部494L中更均勻分布的步驟;及對於已安裝的基板Wf進行鍍覆處理的步驟。藉此可更確實地抑制因基板固持器440內部的混入物對於接觸構件494-4等造成的不良影響。The coating method of this embodiment is a coating method performed by the above-mentioned coating apparatus 1000, and includes the following steps: a step of mounting the substrate Wf on the substrate holder 440; a step of discharging the liquid L1 from the discharge port 60; a step of rotating the substrate holder 440 so that the discharged liquid L1 flows to the liquid holding portion 494L or the liquid L1 is more evenly distributed in the liquid holding portion 494L; and a step of coating the mounted substrate Wf. In this way, the adverse effects of the impurities in the substrate holder 440 on the contact member 494-4 and the like can be more reliably suppressed.
下述變形亦在本發明的範圍內,可與上述實施型態或其他變形組合。以下的變形例中,關於表示與上述實施型態相同之結構、功能的部位等,係參照相同的符號而適當省略說明。 (變形例1-1) The following modifications are also within the scope of the present invention and can be combined with the above-described embodiments or other modifications. In the following modifications, the same reference numerals are used for parts showing the same structures and functions as those in the above-mentioned embodiment, and descriptions thereof are appropriately omitted. (Modification 1-1)
上述的實施型態中,亦可在作為緊壓構件的浮動板背面形成凹部。In the above embodiment, a recess may be formed on the back surface of the floating plate serving as the pressing member.
圖16中示意顯示本變形例之浮動板492-2A的背面BS,其係背板總成492的橫剖面圖。圖示的例子中,在背面BS以旋轉對稱的方式配置有10個圓柱狀按壓機構492-3,但按壓機構492-3的形狀、個數及位置並無特別限定。Fig. 16 schematically shows the back side BS of the floating plate 492-2A of this modification, which is a cross-sectional view of the back plate assembly 492. In the illustrated example, 10 cylindrical pressing mechanisms 492-3 are arranged in a rotationally symmetrical manner on the back side BS, but the shape, number and position of the pressing mechanisms 492-3 are not particularly limited.
浮動板492-2A的背面BS之中央部上,以將浮動板492-2A之中心軸Ax1圍住的方式形成有凹部40A。中心軸Ax1較佳係構成與基板固持器440的旋轉軸大致一致的態樣。從吐出口60落下的液體L1暫時被保持於凹部40A。凹部40A,在由旋轉機構446進行旋轉(上述步驟S103)之前,將液體L1保持於中央部,藉此抑制旋轉時在各方向上流動的液體L1之量的偏差。藉此,液體L1更均勻地分布於液體保持部494L中。 (變形例1-2) A recess 40A is formed in the central portion of the back side BS of the floating plate 492-2A so as to surround the central axis Ax1 of the floating plate 492-2A. The central axis Ax1 is preferably configured to be substantially consistent with the rotation axis of the substrate holder 440. The liquid L1 dropped from the discharge port 60 is temporarily held in the recess 40A. The recess 40A holds the liquid L1 in the central portion before being rotated by the rotating mechanism 446 (the above-mentioned step S103), thereby suppressing the deviation of the amount of liquid L1 flowing in each direction during rotation. In this way, the liquid L1 is more evenly distributed in the liquid holding portion 494L. (Variation 1-2)
變形例1-1中,亦可在浮動板的背面形成放射狀凹部。In Modification 1-1, radial recesses may be formed on the back surface of the floating plate.
圖17係示意顯示本變形例之浮動板492-2B的背面BS,其係背板總成492的橫剖面圖。浮動板492-2B的背面BS上,除了凹部40A以外,亦形成有放射狀延伸的凹部40B。從吐出口60吐出之液體L1容易通過凹部40B上而放射狀地流動。藉此,在上述步驟S103中藉由旋轉機構446進行旋轉時,可更確實地抑制在各方向上流動的液體L1之量的偏差。FIG. 17 schematically shows the back side BS of the floating plate 492-2B of the present modification, which is a cross-sectional view of the back plate assembly 492. In addition to the recess 40A, radially extending recesses 40B are also formed on the back side BS of the floating plate 492-2B. The liquid L1 discharged from the discharge port 60 easily flows radially through the recess 40B. Thus, when the rotating mechanism 446 is rotated in the above-mentioned step S103, the deviation of the amount of the liquid L1 flowing in each direction can be more reliably suppressed.
本變形例的鍍覆裝置中,浮動板492-2B的背面BS上形成有用以使液體L1流動或將其保持的凹部40A及40B。藉此可抑制在各方向上流動的液體L1之量的偏差,可使液體L1更均勻地分布於液體保持部494L中。又,可使液體L1平順地流動至液體保持部494L,而可提高處理的效率。另外,背面BS上亦可不形成凹部40A而是形成凹部40B。 (變形例1-3) In the plating apparatus according to this modification, recessed portions 40A and 40B for flowing or retaining the liquid L1 are formed on the back surface BS of the floating plate 492-2B. This can suppress variation in the amount of liquid L1 flowing in each direction, and allow liquid L1 to be more uniformly distributed in the liquid holding portion 494L. In addition, the liquid L1 can be smoothly flowed to the liquid holding portion 494L, thereby improving the processing efficiency. In addition, the recessed portion 40B may be formed on the back surface BS instead of the recessed portion 40A. (Modification 1-3)
上述的實施型態中,亦可進一步藉由使基板固持器傾斜而使液體L1流動至液體保持部494L。In the above-mentioned embodiment, the liquid L1 may be further allowed to flow to the liquid retaining portion 494L by tilting the substrate holder.
圖18係示意顯示用以說明本變形例之鍍覆方法的鍍覆模組400A之縱剖面圖。鍍覆模組400A具有與上述鍍覆模組400大致相同的構成,但在具備傾斜機構447此點上有所不同。傾斜機構447構成使基板固持器440傾斜的態樣,例如可藉由傾斜機構等習知的機構來實現。此處,基板固持器440的傾斜係指可配置於基板固持器440的基板Wf傾斜,其係藉由例如浮動板492-2的下表面相對於水平的角度來表示。FIG. 18 is a schematic longitudinal cross-sectional view of a coating module 400A for illustrating the coating method of this modification. The coating module 400A has substantially the same structure as the above-mentioned coating module 400, but is different in that it has a tilting mechanism 447. The tilting mechanism 447 is configured to tilt the substrate holder 440, which can be achieved by a known mechanism such as a tilting mechanism. Here, the tilt of the substrate holder 440 refers to the tilt of the substrate Wf that can be arranged on the substrate holder 440, which is represented by, for example, the angle of the lower surface of the floating plate 492-2 relative to the horizontal.
控制模組800,從吐出口60朝向浮動板492-2吐出液體L1之後,控制旋轉機構446及傾斜機構447,使基板固持器440旋轉,同時以浮動板492-2的背面BS相對水平傾斜的方式使基板固持器440傾斜。藉由重力,液體L1容易流動至位於傾斜下側的液體保持部494L。藉此,即使在液體L1不易藉由旋轉而流動的情況中,亦可更確實地將液體L1供給至接觸構件494-4。從使液體L1更均勻地分布於液體保持部494L之中的觀點來看,傾斜機構447較佳係使基板固持器440往不同的多個方向傾斜。After the control module 800 discharges the liquid L1 from the discharge port 60 toward the floating plate 492-2, it controls the rotation mechanism 446 and the tilting mechanism 447 to rotate the substrate holder 440 while tilting the back surface BS of the floating plate 492-2 relatively horizontally. This way the substrate holder 440 is tilted. Due to gravity, the liquid L1 easily flows to the liquid holding portion 494L located on the inclined lower side. Thereby, even in a case where the liquid L1 is difficult to flow by rotation, the liquid L1 can be supplied to the contact member 494-4 more reliably. From the viewpoint of distributing the liquid L1 more uniformly in the liquid holding portion 494L, the tilting mechanism 447 preferably tilts the substrate holder 440 in multiple different directions.
又,如圖示的例子,在已安裝有基板Wf的基板固持器440浸漬於鍍覆液時,若以傾斜機構447進行傾斜,則會因為傾斜而使氣泡朝向液面上升,因此氣泡不易殘留於被鍍覆面Wf-a。如此可防止因氣泡導致電場混亂,可降低所形成之鍍覆的厚度之均勻性。換言之,控制模組800,在避免氣泡進入被鍍覆面Wf-a而使基板固持器440傾斜時,可使液體L1流動至液體保持部494L。In addition, as shown in the example, when the substrate holder 440 with the substrate Wf mounted thereon is immersed in the coating liquid, if the substrate holder 440 is tilted by the tilting mechanism 447, the tilting causes bubbles to rise toward the liquid surface, so that bubbles are less likely to remain on the coating surface Wf-a. This can prevent the electric field from being disrupted by bubbles, and can reduce the uniformity of the thickness of the coating formed. In other words, the control module 800 can make the liquid L1 flow to the liquid holding portion 494L when the substrate holder 440 is tilted to prevent bubbles from entering the coating surface Wf-a.
圖19係顯示本變形例之鍍覆方法之流程的流程圖。此鍍覆方法係藉由控制模組800進行。步驟S201、S202及S205與上述圖15之流程圖的步驟S101、S102及S105相同,故省略說明。步驟S202之後,進行步驟S203。步驟S203中,一邊藉由傾斜機構447及旋轉機構446分別使基板固持器440傾斜及旋轉,一邊使基板固持器440浸漬於鍍覆液中。步驟S203之後,進行步驟S204。步驟S204中,傾斜機構447使基板固持器440成為位於水平位置的狀態。此處,所謂的水平位置,係基板固持器440的方向成為略水平,而使被鍍覆面Wf-a可以預期的程度均勻地形成鍍覆的程度。步驟S204之後,進行步驟S205。 (變形例1-4) FIG. 19 is a flow chart showing the flow of the plating method according to this modification. This plating method is performed by the control module 800. Steps S201, S202, and S205 are the same as steps S101, S102, and S105 of the above-mentioned flowchart of FIG. 15, so the description is omitted. After step S202, step S203 is performed. In step S203, the substrate holder 440 is immersed in the plating liquid while the substrate holder 440 is tilted and rotated by the tilting mechanism 447 and the rotation mechanism 446 respectively. After step S203, step S204 is performed. In step S204, the tilt mechanism 447 brings the substrate holder 440 into a horizontal position. Here, the so-called horizontal position means that the direction of the substrate holder 440 is substantially horizontal, so that the plated surface Wf-a can be plated as uniformly as expected. After step S204, step S205 is performed. (Modification 1-4)
上述的實施型態中,亦可從基板固持器的外部吐出液體,並將液體配置於浮動板的背面。In the above-mentioned embodiment, the liquid may be discharged from the outside of the substrate holder and disposed on the back side of the floating plate.
圖20係示意顯示本變形例的鍍覆模組400B的縱剖面圖。鍍覆模組400B具有與上述實施型態之鍍覆模組400與大致相同的構成,但其具備基板固持器440A來代替基板固持器440,更具備液體供給裝置600,此點與上述的鍍覆模組400有所不同。基板固持器440A具有與基板固持器440大致相同的構成,但具備浮動板492-2C以代替浮動板492-2,並且未形成供給流路50及吐出口60,此點與基板固持器440有所不同。FIG. 20 is a longitudinal sectional view schematically showing the plating module 400B of this modification. The plating module 400B has substantially the same structure as the plating module 400 of the above-mentioned embodiment, but it is equipped with a substrate holder 440A instead of the substrate holder 440, and is further equipped with a liquid supply device 600. This point is different from the above-mentioned plating module 400B. The overlay mold set 400 is different. The substrate holder 440A has substantially the same structure as the substrate holder 440, but is equipped with a floating plate 492-2C instead of the floating plate 492-2, and does not have the supply flow path 50 and the discharge port 60, which is different from the substrate holder 440. different.
液體供給裝置600構成對於浮動板492-2C供給液體L1的態樣。液體供給裝置600具備噴嘴610,其中形成有用以吐出液體L1的吐出口61。噴嘴610構成下述態樣:在背板492-1上升時,可從基板固持器440A的外部朝向後述凹部40C吐出液體L1。圖示的例子構成下述態樣:從噴嘴610吐出之液體L1通過第1上部構件493及配置於支撐構件494外周部的多個柱狀第2上部構件496之間而射入基板固持器440A的內部。吐出口61可較佳地配置於基板固持器440A的側邊。換言之,吐出口61較佳係配置於基板固持器440A的側邊或是可流動至基板固持器440A的側邊。又,從液體L1容易到達凹部40C的觀點來看,吐出口61較佳係在基板固持器440A的側邊並且可配置於比基板固持器440A之底面S100更上方之處,並且可配置於比浮動板492-2C的背面BS的最高到達位置更上方之處。如此,液體供給裝置600中形成有用以朝向凹部40C吐出液體L1的吐出口61。The liquid supply device 600 is configured to supply the liquid L1 to the floating plate 492-2C. The liquid supply device 600 has a nozzle 610 in which a discharge port 61 for discharging the liquid L1 is formed. The nozzle 610 is configured as follows: when the back plate 492-1 rises, the liquid L1 can be discharged from the outside of the substrate holder 440A toward the recessed portion 40C described later. The illustrated example is configured as follows: the liquid L1 discharged from the nozzle 610 passes between the first upper member 493 and the plurality of columnar second upper members 496 arranged on the outer periphery of the support member 494 and is injected into the interior of the substrate holder 440A. The discharge port 61 can be preferably arranged on the side of the substrate holder 440A. In other words, the outlet 61 is preferably disposed on the side of the substrate holder 440A or can flow to the side of the substrate holder 440A. In addition, from the perspective of making it easy for the liquid L1 to reach the recess 40C, the outlet 61 is preferably disposed on the side of the substrate holder 440A and can be disposed above the bottom surface S100 of the substrate holder 440A, and can be disposed above the highest reaching position of the back surface BS of the floating plate 492-2C. In this way, the outlet 61 for discharging the liquid L1 toward the recess 40C is formed in the liquid supply device 600.
圖21係示意顯示本變形例之浮動板492-2C的背面BS的俯視圖。浮動板492-2C具有與上述變形例之浮動板492-2A大致相同的構成,但其中形成有凹部40C以代替凹部40A,此點有所不同。凹部40C形成於浮動板40C的外周部。藉此,容易從基板固持器440A的外部將液體L1導入凹部40C。FIG. 21 is a top view schematically showing the back side BS of the floating plate 492-2C of this modification. The floating plate 492-2C has substantially the same structure as the floating plate 492-2A of the above modification, but is different in that a recess 40C is formed therein instead of the recess 40A. The recess 40C is formed on the outer periphery of the floating plate 40C. Thus, it is easy to introduce the liquid L1 from the outside of the substrate holder 440A into the recess 40C.
圖22至24係用以說明本變形例之鍍覆方法,其係依照時序顯示基板固持器440A之狀態的縱剖面圖。此鍍覆方法係藉由控制模組800的控制進行。22 to 24 are vertical cross-sectional views showing the state of the substrate holder 440A in time series for explaining the plating method of this modification. This plating method is controlled by the control module 800 .
圖22係示意顯示在基板固持器440A的內部配置液體L1之步驟的圖。第2升降機構443若使背板總成492移動而使其從密封構件494-2離開,則從噴嘴610的吐出口61朝向凹部40C吐出液體L1。此時,較佳係藉由旋轉機構446使基板固持器440A旋轉,以使液體L1盡量分布於整周。或是液體供給裝置600亦可以朝向凹部40C之不同位置吐出液體L1的方式移動。FIG. 22 is a diagram schematically showing the step of disposing the liquid L1 inside the substrate holder 440A. When the second lifting mechanism 443 moves the back plate assembly 492 to separate it from the sealing member 494-2, the liquid L1 is ejected from the ejection port 61 of the nozzle 610 toward the recess 40C. At this time, it is preferred to rotate the substrate holder 440A by the rotating mechanism 446 so that the liquid L1 is distributed as much as possible around the entire periphery. Alternatively, the liquid supply device 600 may also be moved in a manner to eject the liquid L1 toward different positions of the recess 40C.
圖23係示意顯示將基板Wf安裝於配置有液體L1之基板固持器440A上的步驟的圖。基板Wf配置於支撐構件494上,第2升降機構443使背板總成492下降,基板固持器440A與基板Wf之間因此而密封。液體L1仍配置於浮動板492-2C的凹部40C中。FIG. 23 is a diagram schematically showing the steps of mounting the substrate Wf on the substrate holder 440A on which the liquid L1 is arranged. The substrate Wf is placed on the support member 494, and the second lifting mechanism 443 lowers the back plate assembly 492, whereby the substrate holder 440A and the substrate Wf are sealed. The liquid L1 is still disposed in the recess 40C of the floating plate 492-2C.
圖24係示意顯示使凹部40C中存在的液體L1流動至液體保持部494L之步驟的圖。若旋轉機構446使基板固持器440A旋轉,則液體L1會藉由離心力從配置於浮動板492-2C之外周部的凹部40C往徑向外側流動,而保持於液體保持部494L。Fig. 24 schematically shows the step of causing the liquid L1 in the recess 40C to flow to the liquid retaining portion 494L. When the substrate holder 440A is rotated by the rotating mechanism 446, the liquid L1 flows radially outward from the recess 40C disposed on the outer periphery of the floating plate 492-2C by centrifugal force and is retained in the liquid retaining portion 494L.
本變形例的鍍覆裝置及鍍覆方法中,吐出液體L1的吐出口61,配置於基板固持器440A的外部,控制模組800構成從基板固持器440A外部的吐出口61朝向浮動板492-2C吐出液體L1的態樣。藉此,無須設置用以對於基板固持器440A吐出液體L1的供給流路,可以更簡易的構成將液體L1供給至基板固持器440A的內部。 (變形例1-5) In the coating device and coating method of this variant, the outlet 61 for discharging the liquid L1 is arranged outside the substrate holder 440A, and the control module 800 is configured to discharge the liquid L1 from the outlet 61 outside the substrate holder 440A toward the floating plate 492-2C. Thereby, there is no need to set a supply flow path for discharging the liquid L1 to the substrate holder 440A, and the liquid L1 can be supplied to the inside of the substrate holder 440A more simply. (Variant 1-5)
上述的實施型態中,亦可藉由吐出至基板固持器的內部之液體L1來清洗基板固持器的內部。In the above embodiment, the inside of the substrate holder can also be cleaned by discharging the liquid L1 into the inside of the substrate holder.
圖25係顯示本變形例之鍍覆模組400C的概念圖。鍍覆模組400C具有與上述變形例的鍍覆模組400A相同的構成,但其具備清洗裝置470,此點與鍍覆模組400A有所不同。清洗裝置470具備手臂474與清洗噴嘴482。25 is a conceptual diagram showing a coating module 400C of this modification. The coating module 400C has the same structure as the coating module 400A of the above modification, but is different from the coating module 400A in that it includes a cleaning device 470. The cleaning device 470 includes an arm 474 and a cleaning nozzle 482.
清洗噴嘴482吐出作為清洗液的液體L2。液體L2可為純水或脫氣水等,其可為與液體L1相同的組成,亦可為不同的組成。清洗噴嘴482與未圖示的配管連接,清洗噴嘴482將從未圖示的液體源透過配管導入而供給的液體L2吐出。圖示的例子中,清洗噴嘴482係以沿著平面展開的方式吐出液體L1的噴嘴,清洗噴嘴482亦可為在大致相同的方向上吐出液體L1的直進噴嘴。The cleaning nozzle 482 discharges liquid L2 as a cleaning liquid. Liquid L2 may be pure water, degassed water, etc., and may have the same composition as liquid L1 or a different composition. The cleaning nozzle 482 is connected to a pipe (not shown), and discharges the liquid L2 introduced through the pipe from a liquid source (not shown) and supplied. In the illustrated example, the cleaning nozzle 482 is a nozzle that spits out the liquid L1 in a manner that spreads along a plane. The cleaning nozzle 482 may also be a linear nozzle that spits out the liquid L1 in substantially the same direction.
清洗裝置470具備驅動機構476,其構成使手臂474旋繞之態樣。驅動機構476,例如可藉由馬達等習知的機構來實現。手臂474係從驅動機構476在水平方向上延伸的板狀構件。清洗噴嘴482保持於手臂474上。驅動機構476構成下述態樣:藉由使手臂474旋繞,使清洗噴嘴482在鍍覆槽410與基板固持器440之間的清洗位置以及從鍍覆槽410與基板固持器440之間退避的退避位置之間移動。The cleaning device 470 has a driving mechanism 476 configured to rotate an arm 474. The driving mechanism 476 can be realized by a known mechanism such as a motor. The arm 474 is a plate-shaped member extending in the horizontal direction from the driving mechanism 476. The cleaning nozzle 482 is held on the arm 474. The driving mechanism 476 is configured to move the cleaning nozzle 482 between a cleaning position between the coating tank 410 and the substrate holder 440 and a retreat position retreated from the coating tank 410 and the substrate holder 440 by rotating the arm 474.
清洗裝置470具備配置於清洗噴嘴482下方的托盤構件478。托盤構件478構成承接從清洗噴嘴482吐出而與基板固持器440接觸後流下之液體L2的態樣。本變形例中,清洗噴嘴482及手臂474容納於托盤構件478中。驅動機構476構成使清洗噴嘴482、手臂474及托盤構件478一起在清洗位置與退避位置之間旋繞的態樣。然而,驅動機構476亦可各別驅動清洗噴嘴482及手臂474與托盤構件478。The cleaning device 470 includes a tray member 478 arranged below the cleaning nozzle 482 . The tray member 478 is configured to receive the liquid L2 discharged from the cleaning nozzle 482 and then flowed down after contacting the substrate holder 440 . In this modification, the cleaning nozzle 482 and the arm 474 are accommodated in the tray member 478 . The drive mechanism 476 is configured to rotate the cleaning nozzle 482, the arm 474, and the tray member 478 together between the cleaning position and the retracted position. However, the driving mechanism 476 can also drive the cleaning nozzle 482 and the arm 474 and the tray member 478 respectively.
本變形例的基板固持器440的清洗方法中,從吐出口60將液體L1吐出至未安裝有基板Wf的基板固持器440的內部後,藉由「旋轉機構446使基板固持器440旋轉」以及「傾斜機構447使基板固持器440傾斜」的至少一者來使液體L1在基板固持器440的內部流動。藉由這樣的流動,可清洗浮動板492-2的背面BS、接觸構件494-4、液體保持部494L及密封構件494-2等。清洗基板固持器440的內部後,液體L1從浮動板492-2與密封構件494-2之間流下至托盤構件478,因此可抑制其稀釋鍍覆液。另一方面,藉由清洗噴嘴482所吐出之液體L2清洗浮動板492-2中配置基板Wf之一側的面及支撐構件494。流下至托盤構件478的液體L1及液體L2通過未圖示的配管排出。另外,亦可不使用從清洗噴嘴482吐出之液體L2,而是藉由從吐出口60吐出之液體L1來進行清洗。In the cleaning method of the substrate holder 440 of this modification, after the liquid L1 is discharged from the discharge port 60 into the substrate holder 440 on which the substrate Wf is not mounted, the substrate holder 440 is rotated by the "rotating mechanism 446" and At least one of "the tilt mechanism 447 tilts the substrate holder 440" causes the liquid L1 to flow inside the substrate holder 440. By such a flow, the back surface BS of the floating plate 492-2, the contact member 494-4, the liquid holding part 494L, the sealing member 494-2, and the like can be cleaned. After cleaning the inside of the substrate holder 440, the liquid L1 flows down to the tray member 478 from between the floating plate 492-2 and the sealing member 494-2, so that it can be suppressed from diluting the plating liquid. On the other hand, the surface of the floating plate 492 - 2 on the side where the substrate Wf is disposed and the supporting member 494 are cleaned by the liquid L2 ejected from the cleaning nozzle 482 . The liquid L1 and the liquid L2 flowing down to the tray member 478 are discharged through a pipe (not shown). In addition, the liquid L2 discharged from the cleaning nozzle 482 may not be used, but the liquid L1 discharged from the discharge port 60 may be used for cleaning.
本變形例中,控制模組800構成下述態樣:在基板固持器440上未安裝基板Wf時,從吐出口60吐出液體L1以清洗背面BS、接觸構件494-4、液體保持部494L及密封構件494-2的至少一者。藉此,在將基板Wf卸除後,亦可抑制因為鍍覆液等混入物而損傷接觸構件494-4等。In this modification, the control module 800 is configured as follows: when the substrate Wf is not mounted on the substrate holder 440, the liquid L1 is discharged from the discharge port 60 to clean at least one of the back surface BS, the contact member 494-4, the liquid holding portion 494L, and the sealing member 494-2. Thus, after the substrate Wf is removed, damage to the contact member 494-4 and the like due to mixed substances such as the coating liquid can be suppressed.
圖26係顯示本變形例的鍍覆方法之流程的流程圖。步驟S301中,對於基板Wf進行鍍覆處理。步驟S301之後,進行步驟S302。步驟S302中,將基板Wf從基板固持器440卸除。步驟S302之後,進行步驟S303。步驟S303中,液體L1吐出至作為緊壓構件的浮動板492-2的背面BS。步驟S303之後,進行步驟S304。步驟S304中,傾斜機構447或旋轉機構446使基板固持器440分別傾斜或旋轉。步驟S304之後,處理結束。 (變形例1-6) FIG. 26 is a flow chart showing the process of the coating method of this variation. In step S301, the substrate Wf is subjected to coating treatment. After step S301, step S302 is performed. In step S302, the substrate Wf is removed from the substrate holder 440. After step S302, step S303 is performed. In step S303, liquid L1 is ejected to the back surface BS of the floating plate 492-2 as a pressing member. After step S303, step S304 is performed. In step S304, the tilting mechanism 447 or the rotating mechanism 446 tilts or rotates the substrate holder 440, respectively. After step S304, the process ends. (Variation 1-6)
上述實施型態中,基板固持器的支撐構件上亦可形成用以使液體排出至基板固持器外部的傾斜面。In the above embodiment, the supporting member of the substrate holder may also be formed with an inclined surface for allowing liquid to be discharged to the outside of the substrate holder.
圖27係示意顯示本變形例的基板固持器440B的縱剖面圖。基板固持器440B具有與上述實施型態之基板固持器440大致相同的構成,但其具備支撐構件494A以代替支撐構件494,此點與基板固持器440有所不同。支撐構件494A具有與上述支撐構件494大致相同的構成,但在構成液體保持部494L之側壁的內側面上形成有傾斜面494S,此點與支撐構件494不同。傾斜面494S形成高度往徑向外側變高的態樣,相較於鉛直延伸的側面,更容易將液體L1往徑向外側排出。FIG. 27 is a longitudinal sectional view schematically showing the substrate holder 440B of this modification. The substrate holder 440B has substantially the same structure as the substrate holder 440 of the above embodiment, but is different from the substrate holder 440 in that it includes a support member 494A instead of the support member 494 . The support member 494A has substantially the same structure as the support member 494 described above, but is different from the support member 494 in that an inclined surface 494S is formed on the inner surface of the side wall constituting the liquid holding portion 494L. The inclined surface 494S has a height that becomes higher toward the radially outer side, making it easier to discharge the liquid L1 toward the radially outer side than a vertically extending side surface.
圖28係示意顯示本變形例的基板固持器440B的清洗方法的縱剖面圖。在浮動板492-2下降而接觸密封構件494-2的狀態下,從吐出口60吐出液體L1之後,藉由旋轉機構446進行旋轉。位於浮動板492-2之背面BS上的液體L1,藉由旋轉的離心力在徑向上向外流動,越過液體保持部494L的傾斜面494S,從柱狀第2上部構件496之間往基板固持器440B的外側排出(箭號A50)。藉此,液體L1在徑向上平順地向外流動,可效率良好地清洗接觸構件494-4。FIG. 28 is a longitudinal cross-sectional view schematically showing the cleaning method of the substrate holder 440B according to this modification. With the floating plate 492-2 lowered and in contact with the sealing member 494-2, the liquid L1 is discharged from the discharge port 60 and then rotated by the rotation mechanism 446. The liquid L1 located on the back surface BS of the floating plate 492-2 flows outward in the radial direction due to the centrifugal force of rotation, crosses the inclined surface 494S of the liquid holding part 494L, and flows toward the substrate holder from between the columnar second upper members 496. The outer discharge of 440B (arrow A50). Thereby, the liquid L1 flows outward smoothly in the radial direction, and the contact member 494-4 can be cleaned efficiently.
圖29係顯示包含本變形例之基板固持器440B的清洗方法的鍍覆方法之流程的流程圖。此鍍覆方法係由控制模組800進行。步驟S401中,對於基板Wf進行鍍覆處理。步驟S401之後,進行步驟S402。步驟S402中,將基板Wf從基板固持器440B卸除。步驟S402之後,進行步驟S403。步驟S403中,作為緊壓構件的浮動板492-2與密封構件494-2接觸。步驟S403之後,進行步驟S404。步驟S404中,對於浮動板492-2的背面BS吐出液體L1。步驟S404之後,進行步驟S405。步驟S405中,旋轉機構446使基板固持器440B旋轉。步驟S405之後,處理結束。 第2實施型態 FIG. 29 is a flow chart showing the process of the coating method including the cleaning method of the substrate holder 440B of the present variation. The coating method is performed by the control module 800. In step S401, the substrate Wf is subjected to coating treatment. After step S401, step S402 is performed. In step S402, the substrate Wf is removed from the substrate holder 440B. After step S402, step S403 is performed. In step S403, the floating plate 492-2 as a clamping member is in contact with the sealing member 494-2. After step S403, step S404 is performed. In step S404, liquid L1 is ejected onto the back surface BS of the floating plate 492-2. After step S404, step S405 is performed. In step S405, the rotating mechanism 446 rotates the substrate holder 440B. After step S405, the process is completed. Second implementation type
第2實施型態的鍍覆裝置,具有與上述第1實施型態的鍍覆裝置1000相同的構成,但具備鍍覆模組4000來代替鍍覆模組400,此點與鍍覆裝置1000有所不同。以下關於表示與上述實施型態相同之結構、功能的部位等,參照相同的符號,並適當省略說明。The plating device of the second embodiment has the same configuration as the plating device 1000 of the first embodiment, but has a plating module 4000 instead of the plating module 400. This point is different from that of the plating device 1000. different. In the following, the same reference numerals will be used for parts showing the same structures and functions as those in the above-mentioned embodiment, and descriptions thereof will be appropriately omitted.
圖30係示意顯示本實施型態的鍍覆模組4000的縱剖面圖。鍍覆模組4000具有與上述鍍覆模組400相同的構成,但其具備基板固持器4400代替基板固持器440,更具備導電度計406及托盤406T,此點與上述鍍覆模組400有所不同。30 is a schematic longitudinal cross-sectional view of a coating module 4000 of this embodiment. The coating module 4000 has the same structure as the above-mentioned coating module 400, but it has a substrate holder 4400 instead of the substrate holder 440, and further has a conductivity meter 406 and a tray 406T, which is different from the above-mentioned coating module 400.
基板固持器4400具有與上述基板固持器440相同的構成,但其中形成有往液體保持部494L開口的排出口90、以及排出流路80,此點與基板固持器440不同。圖示的例子中,基板固持器4400具備支撐構件4940。支撐構件4940中,在構成液體保持部494L之側壁的支撐構件4940的內側面上形成有排出口90。藉由在基板固持器4400的內部形成排出口90,在基板Wf卸除的狀態下,可排出液體保持部494L的液體L1所包含之混入物,而可抑制混入物對於接觸構件494-4等的不良的影響。又,藉由在將基板Wf卸除之前預先將液體L1排出,可降低在卸除基板Wf時液體L1流下至鍍覆液而稀釋鍍覆液的疑慮。因為可吐出液體L1以及可將其排出,故可保持於基板固持器4400上的液體L1的量沒有限制,而可對於液體保持部494L供給更大量的液體L1,進而可抑制混入物對於接觸構件494-4等造成不良的影響。The substrate holder 4400 has the same structure as the substrate holder 440 described above, but is different from the substrate holder 440 in that the discharge port 90 opening to the liquid holding portion 494L and the discharge flow path 80 are formed. In the illustrated example, the substrate holder 4400 is provided with a support member 4940. In the support member 4940, the discharge port 90 is formed on the inner surface of the support member 4940 constituting the side wall of the liquid holding portion 494L. By forming the discharge port 90 inside the substrate holder 4400, the contaminants contained in the liquid L1 of the liquid holding portion 494L can be discharged in a state where the substrate Wf is removed, and the contamination of the contaminants to the contact member 494-4 and the like can be suppressed. of adverse effects. In addition, by discharging the liquid L1 in advance before removing the substrate Wf, it is possible to reduce the risk that the liquid L1 flows down to the plating solution and dilutes the plating solution when the substrate Wf is removed. Since the liquid L1 can be spouted and discharged, the amount of liquid L1 that can be held on the substrate holder 4400 is not limited, and a larger amount of liquid L1 can be supplied to the liquid holding portion 494L, thereby suppressing the impact of contaminants on the contact member. 494-4, etc. cause adverse effects.
排出流路80,通過基板固持器4400的內部,將排出口90與基板固持器4400的外部連通。藉此可適當調整以避免排出之液體L1落下至鍍覆液而稀釋鍍覆液。從排出口90排出液體L1,可藉由設置於排出流路80上的未圖示的閥或泵等來控制。圖示的例子中,排出流路80從排出口90依序通過支撐構件4940、第2上部構件496、第1上部構件493及旋轉軸491的內部,但只要可將液體L1從基板固持器4400的內部排出,則未特別限定。圖示的例子構成下述態樣:從排出流路80排出至基板固持器4400外部的液體L1通過托盤406T而被送至導電度計406以測量導電度。另外,鍍覆模組4000亦可不具備導電度計。The discharge flow path 80 passes through the inside of the substrate holder 4400 and communicates the discharge port 90 with the outside of the substrate holder 4400 . This can be appropriately adjusted to prevent the discharged liquid L1 from falling into the plating solution and diluting the plating solution. The discharge of the liquid L1 from the discharge port 90 can be controlled by a valve or a pump (not shown) provided in the discharge flow path 80 . In the illustrated example, the discharge flow path 80 sequentially passes through the support member 4940 , the second upper member 496 , the first upper member 493 and the rotation shaft 491 from the discharge port 90 . However, as long as the liquid L1 can be discharged from the substrate holder 4400 Internal discharge is not particularly limited. In the illustrated example, the liquid L1 discharged from the discharge channel 80 to the outside of the substrate holder 4400 is sent to the conductivity meter 406 through the tray 406T to measure the conductivity. In addition, the plating module 4000 does not need to be equipped with a conductivity meter.
圖31係顯示本實施型態之鍍覆方法的一例之流程的流程圖。此鍍覆方法係由控制模組800進行。步驟S501中,基板Wf安裝於基板固持器4400上。步驟S501之後,進行步驟S502。步驟S502中,從吐出口60吐出液體L1。所吐出之液體L1被保持於液體保持部494L。此處,為了使液體L1流動至液體保持部494L,或是使液體L1在液體保持部494L中更均勻地分布,亦可藉由旋轉機構446或傾斜機構447使基板固持器4400旋轉或傾斜。步驟S502之後,進行步驟S503。FIG. 31 is a flow chart showing an example of the process of the coating method of the present embodiment. The coating method is performed by the control module 800. In step S501, the substrate Wf is mounted on the substrate holder 4400. After step S501, step S502 is performed. In step S502, liquid L1 is discharged from the discharge port 60. The discharged liquid L1 is retained in the liquid retaining portion 494L. Here, in order to make the liquid L1 flow to the liquid retaining portion 494L, or to make the liquid L1 more evenly distributed in the liquid retaining portion 494L, the substrate holder 4400 can also be rotated or tilted by the rotating mechanism 446 or the tilting mechanism 447. After step S502, step S503 is performed.
步驟S503中,藉由第1升降機構442使基板固持器4400下降,而使基板固持器4400浸漬於鍍覆液。步驟S503之後,進行步驟S504。步驟S504中,對於基板Wf進行鍍覆處理。步驟S503及S504中,液體L1保持於液體保持部494L,因此混入物的濃度降低,可抑制混入物對於接觸構件494-4等造成不良的影響。步驟S504之後,進行步驟S505。In step S503, the substrate holder 4400 is lowered by the first lifting mechanism 442, and the substrate holder 4400 is immersed in the coating liquid. After step S503, step S504 is performed. In step S504, the substrate Wf is subjected to coating treatment. In steps S503 and S504, the liquid L1 is held in the liquid holding portion 494L, so the concentration of the mixed matter is reduced, and the mixed matter can be suppressed from causing adverse effects on the contact member 494-4 and the like. After step S504, step S505 is performed.
步驟S505中,從排出口90排出液體L1。例如,可將液體L1從基板固持器4400的內部排出,而使液體L1剩下至被覆接觸構件494-4之基板接點494-4b的程度。亦可將基板固持器4400內部的液體L1全部排出。步驟S505之後,進行步驟S506。步驟S506中,從基板固持器4400將基板Wf卸除。步驟S505中,基板固持器440內部的液體L1的量減少,因此可抑制在將基板Wf卸除時液體L1流下至鍍覆液而稀釋鍍覆液。經卸除的基板Wf被運送至清洗模組500。In step S505, liquid L1 is discharged from the discharge port 90. For example, the liquid L1 may be discharged from the inside of the substrate holder 4400 so that the liquid L1 remains to an extent covering the substrate contacts 494-4b of the contact member 494-4. The liquid L1 inside the substrate holder 4400 may also be completely discharged. After step S505, step S506 is performed. In step S506, the substrate Wf is removed from the substrate holder 4400. In step S505, the amount of liquid L1 inside the substrate holder 440 is reduced. Therefore, when the substrate Wf is removed, the liquid L1 can be suppressed from flowing down to the plating solution and diluting the plating solution. The removed substrate Wf is transported to the cleaning module 500 .
下述變形亦在本發明的範圍內,其可與上述實施型態或其他變形組合。以下的變形例中,關於表示與上述實施型態相同之結構、功能的部位等,參照相同的符號,並適當省略說明。 (變形例2-1) The following variations are also within the scope of the present invention and can be combined with the above-mentioned embodiments or other variations. In the following variations, the same symbols are used to represent the same structures and functions as the above-mentioned embodiments, and the description is omitted as appropriate. (Variant 2-1)
上述實施型態中,亦可在使基板固持器4400浸漬於鍍覆液中的狀態下,進行吐出動作及排出動作。以下,將從吐出口60吐出液體L1的動作稱為吐出動作,並將從排出口90排出液體L1的動作稱為排出動作。In the above embodiment, the discharging operation and the discharging operation may be performed while the substrate holder 4400 is immersed in the plating liquid. Hereinafter, the operation of discharging the liquid L1 from the discharge port 60 is called a discharge operation, and the operation of discharging the liquid L1 from the discharge port 90 is called a discharge operation.
圖32係顯示本變形例的鍍覆方法之流程的流程圖。此鍍覆方法係由控制模組800的控制進行。步驟S601中,基板Wf安裝於基板固持器4400。步驟S601之後,進行步驟S602。步驟S602中,藉由第1升降機構442使基板固持器4400下降,而使基板固持器4400浸漬於鍍覆液。步驟S602之後,進行步驟S603。FIG. 32 is a flowchart showing the flow of the plating method according to this modification. This plating method is controlled by the control module 800 . In step S601, the substrate Wf is mounted on the substrate holder 4400. After step S601, step S602 is performed. In step S602, the substrate holder 4400 is lowered by the first lifting mechanism 442, and the substrate holder 4400 is immersed in the plating liquid. After step S602, step S603 is performed.
步驟S603中,在基板固持器4400浸漬於鍍覆液的狀態下,從吐出口60吐出液體L1以及從排出口90排出液體L1。吐出動作及排出動作可進行一次以上的任意次數。在密封構件494-2及基板Wf中,若在互相接觸的該等部分上附著有異物,或是有損傷,則會在密封後發生洩漏,在將基板固持器4400浸漬於鍍覆液時,鍍覆液等會進入液體保持部494L內。本變形例中,在將基板固持器4400浸漬於鍍覆液的狀態下進行吐出動作及排出動作,藉此在浸漬後使已進入裡面之鍍覆液等混入物排出,而可減少混入物對於接觸構件494-4等造成不良的影響。In step S603 , while the substrate holder 4400 is immersed in the plating liquid, the liquid L1 is discharged from the discharge port 60 and the liquid L1 is discharged from the discharge port 90 . The discharging operation and the discharging operation can be performed any number of times more than once. In the sealing member 494-2 and the substrate Wf, if foreign matter adheres to or is damaged at the parts in contact with each other, leakage will occur after sealing. When the substrate holder 4400 is immersed in the plating liquid, The plating liquid and the like enter the liquid holding portion 494L. In this modification, the discharge operation and the discharge operation are performed while the substrate holder 4400 is immersed in the plating liquid. This allows the contaminants such as the plating liquid that have entered the substrate holder 4400 to be discharged after the immersion, thereby reducing the impact of the contaminants on the substrate holder 4400. Contact member 494-4 and the like may cause adverse effects.
控制模組800中,在由導電度計406所測量的已排出之液體L1之導電度小於既定閾值或在其以下時,可停止吐出動作及排出動作。藉此,可根據導電度更確實地在液體保持部494L中存在之混入物濃度低的狀態下進行鍍覆處理。步驟S603之後,進行步驟S604。步驟S604中,對於基板Wf進行鍍覆處理。 (變形例2-2) In the control module 800, when the conductivity of the discharged liquid L1 measured by the conductivity meter 406 is less than a predetermined threshold or below, the discharging and discharging operations can be stopped. Thereby, the plating process can be performed more reliably in a state where the concentration of contaminants present in the liquid holding portion 494L is low depending on the electrical conductivity. After step S603, step S604 is performed. In step S604, a plating process is performed on the substrate Wf. (Modification 2-2)
上述的實施型態中,亦可一邊進行鍍覆處理,一邊進行吐出動作及排出動作。藉此,可更確實地在進行鍍覆處理的期間降低混入物的濃度,而可抑制混入物對於接觸構件494-4等造成不良的影響。In the above-mentioned embodiment, the discharging and discharging operations can also be performed while the coating process is being performed. In this way, the concentration of the impurities can be more reliably reduced during the coating process, and the impurities can be prevented from causing adverse effects on the contact member 494-4 and the like.
吐出至基板固持器4400內部之液體L1的量稱為吐出量,從基板固持器4400的內部排出之液體L1的量稱為排出量。控制模組800可根據由導電度計406所測量的經排出之液體L1的導電度來控制吐出量及排出量中的至少一項。例如,若測得之液體L1的導電度的值高於既定閾值,則有混入物的濃度高而導致金屬成分堆積等不良的影響的可能性,故可同時增加吐出量及排出量。或是此情況中,亦可僅增加吐出量以提高液體保持部494L的液面而降低混入物的濃度。另外,作為吐出量或排出量,亦可控制單位時間內的吐出量或排出量。The amount of liquid L1 discharged into the substrate holder 4400 is called a discharge amount, and the amount of liquid L1 discharged from the inside of the substrate holder 4400 is called a discharge amount. The control module 800 may control at least one of the discharge amount and the discharge amount according to the conductivity of the discharged liquid L1 measured by the conductivity meter 406 . For example, if the measured conductivity value of the liquid L1 is higher than a predetermined threshold, the concentration of contaminants may be high and may cause adverse effects such as accumulation of metal components. Therefore, the discharge volume and discharge volume can be increased at the same time. Alternatively, in this case, the discharge amount may only be increased to raise the liquid level of the liquid holding part 494L and reduce the concentration of the mixed matter. In addition, as the discharge amount or discharge amount, the discharge amount or discharge amount per unit time can also be controlled.
以控制模組800控制吐出動作及排出動作的態樣並無特別限定。可同時進行吐出動作與排出動作,亦可在不同的時間進行。The manner in which the control module 800 controls the discharging operation and the discharging operation is not particularly limited. The spitting and discharging actions can be performed at the same time or at different times.
控制模組800亦可構成間歇性地進行吐出動作及排出動作之至少一者的態樣。藉此,一方面可效率良好地使用液體L1,一方面可減少混入物對於接觸構件494-4等造成不良的影響。控制模組800亦可構成在鍍覆處理期間持續進行吐出動作及排出動作之至少一者的態樣。藉此,可進一步減少在鍍覆處理的期間混入物對於鍍覆處理造成不良的影響。The control module 800 may also be configured to perform at least one of a discharging operation and a discharging operation intermittently. Thereby, on the one hand, the liquid L1 can be used efficiently, and on the other hand, the adverse effects of contaminants on the contact member 494-4 and the like can be reduced. The control module 800 may also be configured to continuously perform at least one of the discharging operation and the discharging operation during the plating process. This can further reduce the adverse effects of contaminants on the plating process during the plating process.
圖33係顯示本變形例之鍍覆方法之流程的流程圖。此鍍覆方法係由控制模組800的控制進行。步驟S701及S702與上述圖32之流程圖的步驟S601及S602相同,因此省略說明。步驟S702之後,進行步驟S703。步驟S703中,一方面對於基板Wf進行鍍覆處理,一方面從吐出口60吐出液體L1以及從排出口90排出液體L1。鍍覆處理結束後,從排出口90排出液體L1後,較佳係將基板Wf從基板固持器4400卸除。 (變形例2-3) FIG. 33 is a flowchart showing the flow of the plating method according to this modification. This plating method is controlled by the control module 800 . Steps S701 and S702 are the same as steps S601 and S602 of the above-mentioned flowchart of FIG. 32 , so the description is omitted. After step S702, step S703 is performed. In step S703 , while the substrate Wf is subjected to a plating process, the liquid L1 is discharged from the discharge port 60 and the liquid L1 is discharged from the discharge port 90 . After the plating process is completed and the liquid L1 is discharged from the discharge port 90, the substrate Wf is preferably removed from the substrate holder 4400. (Modification 2-3)
上述實施型態中,在將基板固持器4400浸漬於鍍覆液時,亦可使基板固持器4400中的液體L1之液面低於鍍覆槽410中的鍍覆液之液面。In the above embodiment, when the substrate holder 4400 is immersed in the plating liquid, the liquid level of the liquid L1 in the substrate holder 4400 may be lower than the liquid level of the plating liquid in the plating tank 410 .
圖34係示意顯示本變形例之鍍覆方法的基板固持器4400之縱剖面圖。控制模組800控制第1升降機構442或是液體L1的吐出或排出以使基板固持器4400之液體L1的液面高度HL1低於鍍覆液的液面高度HS。例如,使液體L1的液面高度HL1高於鍍覆液的液面高度HS。此情況中,亦可由第1升降機構442使基板固持器4400下降,亦可從吐出口60吐出液體L1以使液體L1的液面HL1上升。FIG. 34 is a longitudinal cross-sectional view of the substrate holder 4400 schematically showing the plating method of this modification. The control module 800 controls the first lifting mechanism 442 or the discharge or discharge of the liquid L1 so that the liquid level HL1 of the liquid L1 in the substrate holder 4400 is lower than the liquid level HS of the plating liquid. For example, the liquid level height HL1 of the liquid L1 is set to be higher than the liquid level height HS of the plating liquid. In this case, the substrate holder 4400 may be lowered by the first lifting mechanism 442, or the liquid L1 may be discharged from the discharge port 60 to raise the liquid level HL1 of the liquid L1.
本變形例的控制模組800構成下述態樣:使基板固持器4400浸漬於鍍覆液,以使基板固持器4400中的液體L1之液面HL1低於鍍覆液之液面HS。鍍覆槽410及基板固持器4400的內部為大氣壓,因此藉由此構成,鍍覆液的水壓高於液體L1的水壓,因此可抑制液體L1洩漏至鍍覆液而稀釋鍍覆液。再者,藉由進行基板固持器4400中的液體L1之吐出及排出,亦可將進入基板固持器4400內的鍍覆液等成分排出。如此,一方面可降低接觸構件494-4及基板Wf附近之混入物的濃度,一方面亦可抑制鍍覆液被稀釋。另外,排出口90形成於基板固持器4400內的情況,液體L1的液面亦可高於浮動板492-2的背面BS。 (變形例2-4) The control module 800 of this modification is configured as follows: the substrate holder 4400 is immersed in the coating liquid so that the liquid level HL1 of the liquid L1 in the substrate holder 4400 is lower than the liquid level HS of the coating liquid. The inside of the coating tank 410 and the substrate holder 4400 is atmospheric pressure, so by this configuration, the water pressure of the coating liquid is higher than the water pressure of the liquid L1, so it is possible to suppress the liquid L1 from leaking into the coating liquid and diluting the coating liquid. Furthermore, by spouting and discharging the liquid L1 in the substrate holder 4400, the coating liquid and other components that have entered the substrate holder 4400 can also be discharged. In this way, on the one hand, the concentration of the mixed substances near the contact member 494-4 and the substrate Wf can be reduced, and on the other hand, the coating liquid can be suppressed from being diluted. In addition, when the outlet 90 is formed in the substrate holder 4400, the liquid level of the liquid L1 can also be higher than the back surface BS of the floating plate 492-2. (Variant 2-4)
上述的實施型態中,液體的排出口亦可形成於背板總成。In the above embodiment, the liquid discharge port may also be formed in the back plate assembly.
圖35係示意顯示本變形例的基板固持器4400A的縱剖面圖。基板固持器4400A具有與上述基板固持器4400大致相同的構成,但其中形成有排出口91及排出流路81以代替排出口90及排出流路80,此點與基板固持器4400有所不同。排出口91形成於背板492-1的基板Wf側之一面。排出流路81構成使液體L1從排出口91通過背板492-1及旋轉軸491而排出至基板固持器4400A外部的態樣。如此,藉由將排出口91形成於配置在比液體保持部494L更上側的構件上,而縮短排出流路91,可實現構成更為簡易的基板固持器4400A。如此,從可因應需求進行靈活設計的觀點來看,亦可將排出口91設置於旋轉軸491、背板總成492及構成液體保持部494L之側壁的至少一者。 (變形例2-5) FIG. 35 is a longitudinal sectional view schematically showing the substrate holder 4400A of this modification. The substrate holder 4400A has substantially the same structure as the substrate holder 4400 described above, but is different from the substrate holder 4400 in that a discharge port 91 and a discharge flow path 81 are formed in place of the discharge port 90 and the discharge flow path 80 . The discharge port 91 is formed on one surface of the back plate 492-1 on the substrate Wf side. The discharge flow path 81 is configured to discharge the liquid L1 from the discharge port 91 through the back plate 492-1 and the rotation shaft 491 to the outside of the substrate holder 4400A. In this manner, by forming the discharge port 91 in a member disposed above the liquid holding portion 494L and shortening the discharge flow path 91 , the substrate holder 4400A can be constructed with a simpler structure. In this way, from the perspective of flexible design according to needs, the discharge port 91 can also be provided on at least one of the rotating shaft 491, the back plate assembly 492, and the side wall constituting the liquid holding portion 494L. (Modification 2-5)
上述的實施型態中,液體的排出口亦可形成於在基板固持器內部的空間突出的位置。In the above embodiment, the liquid discharge port may be formed at a position protruding from the space inside the substrate holder.
圖36係示意顯示本變形例的基板固持器4400B的縱剖面圖。基板固持器4400B具有與上述基板固持器4400大致相同的構成,但其中形成有排出口92及排出流路82以代替排出口90及排出流路80,此點與基板固持器4400有所不同。排出口92,形成於管狀構件的端部,其形成於從背板492-1之基板Wf側的面突出的位置。排出流路82構成從排出口92通過背板492-1及旋轉軸491而將液體L1排出至基板固持器4400B外部的態樣。如此,藉由在基板固持器4400B內部空間中突出的位置形成排出口92,可更靈活地設計基板固持器4400B。另外,排出口92,除了背板492-1以外,亦可形成於從基板固持器4400B的任意部分突出的位置。 (變形例2-6) FIG. 36 is a longitudinal sectional view schematically showing the substrate holder 4400B of this modification. The substrate holder 4400B has substantially the same structure as the substrate holder 4400 described above, but is different from the substrate holder 4400 in that a discharge port 92 and a discharge flow path 82 are formed in place of the discharge port 90 and the discharge flow path 80 . The discharge port 92 is formed at an end portion of the tubular member at a position protruding from the surface of the back plate 492-1 on the substrate Wf side. The discharge flow path 82 is configured to discharge the liquid L1 from the discharge port 92 to the outside of the substrate holder 4400B through the back plate 492-1 and the rotation shaft 491. In this way, by forming the discharge port 92 at a protruding position in the internal space of the substrate holder 4400B, the substrate holder 4400B can be designed more flexibly. In addition, the discharge port 92 may be formed at a position protruding from any part of the substrate holder 4400B in addition to the back plate 492-1. (Modification 2-6)
上述的實施型態中,亦可從吐出口吐出從排出口排出之液體。In the above embodiment, the liquid discharged from the discharge port may be discharged from the discharge port.
圖37係示意顯示本變形例的鍍覆模組4000A的縱剖面圖。鍍覆模組4000A具有與上述鍍覆模組4000大致相同的構成,但其具備基板固持器4400C以代替基板固持器4400,以及具備離子交換管柱407,此點與鍍覆模組4000有所不同。基板固持器4400C具有與板固持器4400大致相同的構成,但其具備吐出口62及供給流路51以代替吐出口60及供給流路50,此點與基板固持器4400有所不同。37 is a schematic longitudinal cross-sectional view of a coating module 4000A of this modification. The coating module 4000A has substantially the same structure as the above-mentioned coating module 4000, but is different from the coating module 4000 in that it has a substrate holder 4400C instead of the substrate holder 4400 and an ion exchange column 407. The substrate holder 4400C has substantially the same structure as the plate holder 4400, but is different from the substrate holder 4400 in that it has an outlet 62 and a supply flow path 51 instead of the outlet 60 and the supply flow path 50.
吐出口62形成於構成液體保持部494L的支撐構件4940之內側面。因此,本變形例中,吐出口62及排出口90雙方皆成為往液體保持部492L開口的構成。供給流路51,從離子交換管柱407通過旋轉軸491、第1上部構件493、第2上部構件496及支撐構件4940而連接至吐出口62,而可使液體L1於其中流動。供給流路51亦可從未圖示的液體源連接出來,而可使液體L1在其中流動。The discharge port 62 is formed on the inner surface of the support member 4940 constituting the liquid holding portion 494L. Therefore, in this modification, both the discharge port 62 and the discharge port 90 are configured to open to the liquid holding portion 492L. The supply flow path 51 is connected to the discharge port 62 from the ion exchange column 407 through the rotation shaft 491, the first upper member 493, the second upper member 496, and the support member 4940, so that the liquid L1 can flow therein. The supply flow path 51 may be connected to a liquid source (not shown), and the liquid L1 may flow therein.
圖38係顯示本變形例中的吐出口62及排出口90之配置的概念圖。本變形例中,接觸構件494-4為弧狀,液體保持部494L中,8個接觸構件494-4並排成環狀。鄰接的2個接觸構件494-4之間配置有吐出口62或排出口90。圖示的例子中,吐出口62及排出口90沿著周方向交互配置,但只要可進行液體L1的吐出及排出,則未特別限定於此。從相同的觀點來看,吐出口62及排出口90各別的數量只要為1個以上則無特別限定。接觸構件494-4的形狀可以容易對於基板Wf進行供電的方式適當設計,並不限於圖示的例子。FIG. 38 is a conceptual diagram showing the arrangement of the discharge port 62 and the discharge port 90 in this modification. In this modification, the contact member 494-4 has an arc shape, and eight contact members 494-4 are arranged side by side in a ring shape in the liquid holding portion 494L. The discharge port 62 or the discharge port 90 is arranged between the two adjacent contact members 494-4. In the illustrated example, the discharge ports 62 and the discharge ports 90 are alternately arranged along the circumferential direction, but the configuration is not particularly limited to this as long as the liquid L1 can be discharged and discharged. From the same viewpoint, the number of each of the discharge port 62 and the discharge port 90 is not particularly limited as long as it is one or more. The shape of the contact member 494-4 can be appropriately designed to facilitate power supply to the substrate Wf, and is not limited to the illustrated example.
回到圖37,從排出口90排出之液體L1,通過排出流路80導入離子交換管柱407。離子交換管柱407具備可使液體L1進行去離子化的離子交換樹脂。離子交換管柱407中,液體L1被送至進行離子交換而導電度降低。從離子交換管柱407排出之液體L1,通過供給流路51從吐出口62吐出。排出流路80及供給流路51構成在未通過液體保持部494L及與液體保持部494L連通的基板固持器4400C內部之空間的情況下將排出口90與吐出口62連通的流路。如此,基板固持器4000A中形成液體L1在基板固持器4400C的內部與外部之間循環的構成。Returning to FIG. 37 , the liquid L1 discharged from the discharge port 90 is introduced into the ion exchange column 407 through the discharge flow path 80 . The ion exchange column 407 is provided with an ion exchange resin capable of deionizing liquid L1. In the ion exchange column 407, the liquid L1 is sent to perform ion exchange and the conductivity is reduced. The liquid L1 discharged from the ion exchange column 407 is discharged from the discharge port 62 through the supply flow path 51 . The discharge flow path 80 and the supply flow path 51 constitute a flow path that communicates the discharge port 90 with the discharge port 62 without passing through the liquid holding portion 494L and the space inside the substrate holder 4400C communicating with the liquid holding portion 494L. In this manner, the substrate holder 4000A is configured such that the liquid L1 circulates between the inside and the outside of the substrate holder 4400C.
圖示的例子中,藉由離子交換管柱407來避免循環之液體L1的導電度提高。然而,鍍覆模組4000A中,除了離子交換管柱407以外,或是作為其替代,亦可追加地具備導電度計406(圖30)。此情況中亦可作為下述構成:由導電度計406測得的已排出之液體L1的導電度小於既定閾值或在其以下時,從吐出口62吐出尚未吐出至基板固持器4400C內部的全新液體L1。In the example shown in the figure, the conductivity of the circulating liquid L1 is prevented from increasing by the ion exchange column 407. However, in addition to or instead of the ion exchange column 407, the coating module 4000A may also be provided with a conductivity meter 406 (FIG. 30). In this case, the following configuration may be adopted: when the conductivity of the discharged liquid L1 measured by the conductivity meter 406 is less than or below a predetermined threshold value, new liquid L1 that has not yet been discharged into the substrate holder 4400C is discharged from the discharge port 62.
本變形例之鍍覆方法中,基板固持器4400C更具備在未通過液體保持部494L及與液體保持部494L連通之基板固持器4400C內部之空間的情況下將排出口90與吐出口62連通的流路,控制模組800構成將從排出口90排出之液體L1從吐出口62吐出的態樣。藉此,一方面可效率良好地使用液體L1,一方面可減少混入物對於接觸構件494-4造成不良的影響。另外,在使液體L1循環時,吐出口62及排出口90的位置並無特別限定。亦可不經由吐出口62而是透過上述實施型態的吐出口60使液體L1循環。從縮短供給流路等因應需求進行靈活設計的觀點來看,吐出口62可配置於旋轉軸491、背板總成492及構成液體保持部494L之側壁的至少一者。 (變形例2-7) In the coating method of this variation, the substrate holder 4400C is further provided with a flow path that connects the discharge port 90 with the discharge port 62 without passing through the liquid holding portion 494L and the space inside the substrate holder 4400C that is connected to the liquid holding portion 494L, and the control module 800 is configured to discharge the liquid L1 discharged from the discharge port 90 from the discharge port 62. In this way, on the one hand, the liquid L1 can be used efficiently, and on the other hand, the adverse effects of mixed substances on the contact member 494-4 can be reduced. In addition, when the liquid L1 is circulated, the positions of the discharge port 62 and the discharge port 90 are not particularly limited. It is also possible to circulate the liquid L1 through the discharge port 60 of the above-mentioned embodiment instead of the discharge port 62. From the perspective of flexible design in response to needs such as shortening the supply flow path, the discharge port 62 can be arranged on at least one of the rotating shaft 491, the back plate assembly 492, and the side wall constituting the liquid retaining portion 494L. (Variant 2-7)
上述的實施型態中,鍍覆模組4000亦可不具備旋轉機構446。鍍覆模組4000亦可構成浸漬式的鍍覆裝置。此情況中,如專利文獻3所述,可分別將基板Wf、阻力體450及陽極430沿著鉛直方向配置。即使不進行基板固持器4400的旋轉,亦可藉由吐出動作及排出動作,在基板固持器4400的浸漬前、浸漬中、鍍覆處理中及浸漬結束後的至少一個時間點進行接觸構件494-4等的清洗。In the above-mentioned embodiment, the coating module 4000 may not have the rotating mechanism 446. The coating module 4000 may also be configured as an immersion type coating device. In this case, as described in Patent Document 3, the substrate Wf, the resistance body 450 and the anode 430 may be arranged along the lead vertical direction respectively. Even if the substrate holder 4400 is not rotated, the contact member 494-4 and the like may be cleaned by the ejection action and the discharge action at least at one time point before the immersion of the substrate holder 4400, during the immersion, during the coating process and after the immersion is completed.
本發明亦可記載為以下的型態。 [型態1]根據型態1,提出一種鍍覆裝置,其包含:鍍覆槽,構成容納鍍覆液的態樣;基板固持器,構成保持基板的態樣,該基板是鍍覆處理的對象;旋轉機構,使前述基板固持器旋轉;升降機構,使前述基板固持器升降;及控制裝置;前述基板固持器具備:接觸構件,構成接觸前述基板而可供電的態樣;密封構件,構成將前述基板固持器與前述基板之間密封的態樣;緊壓構件,與前述密封構件對向配置,構成相對前述密封構件緊壓前述基板的態樣;液體保持部,內部具有前述接觸構件,前述液體保持部構成在前述基板被前述密封構件密封時,可保持液體;及吐出口,其構成在前述液體保持部或在前述基板固持器的內部與前述液體保持部連通的空間開口,或是可配置於前述基板固持器的側邊,而吐出前述液體的態樣。根據型態1,可提供一種鍍覆裝置,其可抑制基板固持器內部的混入物對於接觸構件等造成不良的影響。 The present invention can also be described in the following forms. [Type 1] According to Type 1, a plating device is proposed, which includes: a plating tank configured to accommodate a plating liquid; and a substrate holder configured to hold a substrate to be plated Object; a rotation mechanism that rotates the substrate holder; a lift mechanism that lifts the substrate holder; and a control device; the substrate holder is provided with: a contact member configured to contact the substrate and enable power supply; and a sealing member configured to The method of sealing the substrate holder and the substrate; the pressing member is disposed opposite to the sealing member to press the substrate against the sealing member; and the liquid holding portion has the contact member inside, The liquid holding part is configured to hold liquid when the substrate is sealed by the sealing member; and the discharge port is formed as a space opening in the liquid holding part or inside the substrate holder that communicates with the liquid holding part, or It can be arranged on the side of the substrate holder to discharge the liquid. According to the aspect 1, it is possible to provide a plating device that can suppress adverse effects of contaminants inside the substrate holder on contact members and the like.
[型態2]根據型態2,在型態1中,前述吐出口形成於構成前述液體保持部的側壁、以及前述基板固持器的旋轉軸及背板總成的至少一者。根據型態2,可縮短液體的供給流路等,而可因應需求進行靈活的設計。[Mode 2] According to the mode 2, in the mode 1, the discharge port is formed in at least one of a side wall constituting the liquid holding portion, a rotation shaft of the substrate holder, and a back plate assembly. According to type 2, the liquid supply flow path, etc. can be shortened, allowing for flexible design according to needs.
[型態3]根據型態3,在型態1或2中,前述液體保持部係包含前述緊壓構件的外側面、支撐前述接觸構件的支撐構件之內側面及底面而構成。根據型態3,在基板被密封構件密封時,以少量的液體即可效率良好地覆蓋接觸構件。[Pattern 3] According to Pattern 3, in Pattern 1 or 2, the liquid holding portion is configured to include an outer surface of the pressing member, an inner surface and a bottom surface of a support member that supports the contact member. According to Mode 3, when the substrate is sealed by the sealing member, the contact member can be efficiently covered with a small amount of liquid.
[型態4]根據型態4,在型態1至3的任一型態中,前述控制裝置構成下述態樣:在前述基板被前述密封構件密封時,透過前述吐出口,對於與前述液體保持部或前述液體保持部連通的前述空間吐出前述液體。根據型態4,可將液體蓄積於可保持液體之狀態的液體保持部,而可抑制混入物對於接觸構件等造成不良的影響。[Type 4] According to Type 4, in any one of Types 1 to 3, the control device is configured such that when the substrate is sealed by the sealing member, through the discharge port, the control device is connected to the The liquid is discharged from the liquid holding part or the space communicated with the liquid holding part. According to the aspect 4, the liquid can be accumulated in the liquid holding part capable of maintaining the liquid state, and adverse effects of contaminants on contact members and the like can be suppressed.
[型態5]根據型態5,在型態1至4的任一型態中,前述基板固持器構成可保持前述基板而使前述基板之被鍍覆面朝下的態樣,前述旋轉機構,以與前述基板配置於前述基板固持器時的前述被鍍覆面交叉的軸作為旋轉軸,使前述基板固持器旋轉。根據型態5,可利用旋轉機構,使吐出至基板固持器內部的液體流動至液體保持部,或是使其更均勻地分布於液體保持部之中。又,藉由一邊使基板固持器旋轉一邊進行鍍覆處理,可使所形成之鍍覆的厚度更為均勻。[Type 5] According to Type 5, in any one of Types 1 to 4, the substrate holder is configured to hold the substrate with the plated surface of the substrate facing downward, and the rotation mechanism, The substrate holder is rotated using an axis intersecting the plated surface when the substrate is arranged on the substrate holder as a rotation axis. According to the fifth aspect, the rotation mechanism can be used to cause the liquid discharged into the substrate holder to flow to the liquid holding portion, or to be more uniformly distributed in the liquid holding portion. Furthermore, by performing the plating process while rotating the substrate holder, the thickness of the formed plating can be made more uniform.
[型態6]根據型態6,在型態5中,前述吐出口形成於前述緊壓構件的上方,前述吐出口構成對於前述緊壓構件中供前述基板配置之面的背面吐出前述液體的態樣。根據型態6,吐出口形成於緊壓構件的上方,藉此可縮短至吐出口的供給流路而簡易化。又,藉由構成對於緊壓構件的背面吐出液體的態樣,可利用旋轉機構效率良好地對於接觸構件供給液體。[Pattern 6] According to Pattern 6, in Pattern 5, the discharge port is formed above the pressing member, and the discharge port is configured to discharge the liquid to the back of the surface of the pressing member on which the substrate is disposed. Attitude. According to type 6, the discharge port is formed above the pressing member, thereby shortening and simplifying the supply flow path to the discharge port. Furthermore, by configuring the liquid to be discharged to the back surface of the pressing member, the rotating mechanism can efficiently supply the liquid to the contact member.
[型態7]根據型態7,在型態6中,在前述緊壓構件之前述背面上形成有用以保持前述液體或使其流動的凹部。根據型態7,可效率良好地使液體流動至液體保持部,或是更均勻地使液體分布於液體保持部。[Form 7] According to Form 7, in Form 6, a recessed portion for holding or flowing the liquid is formed on the back surface of the pressing member. According to Form 7, the liquid can be efficiently flowed to the liquid holding portion, or the liquid can be more evenly distributed in the liquid holding portion.
[型態8]根據型態8,在型態7中,前述凹部形成放射狀、或形成將前述緊壓構件之中心軸圍住的態樣、或是形成於前述緊壓構件的外周部。根據型態8,可更確實地使液體效率良好地流動至液體保持部,或可更均勻地使液體分布於液體保持部。[Mode 8] According to the mode 8, in the mode 7, the recessed portions are formed in a radial shape, surround the central axis of the pressing member, or are formed in the outer peripheral portion of the pressing member. According to the aspect 8, the liquid can flow to the liquid holding portion more reliably and efficiently, or the liquid can be distributed more uniformly in the liquid holding portion.
[型態9]根據型態9,在型態6至8的任一型態中,前述控制裝置構成下述態樣:在前述基板未安裝於前述基板固持器上時,從前述吐出口吐出前述液體以清洗前述背面、前述接觸構件、前述液體保持部及前述密封構件的至少一者。根據型態9,可抑制基板卸除後因混入物而導致接觸構件等損傷。[Mode 9] According to Mode 9, in any one of Modes 6 to 8, the control device is configured such that when the substrate is not mounted on the substrate holder, the liquid is ejected from the ejection port to clean at least one of the back surface, the contact member, the liquid retaining portion, and the sealing member. According to Mode 9, damage to the contact member and the like due to mixed matter after the substrate is removed can be suppressed.
[型態10]根據型態10,在型態9中,前述液體保持部具備高度在徑向上向外變高的傾斜面,前述控制裝置構成下述態樣:在前述基板未安裝於前述基板固持器時,在使前述緊壓構件與前述密封構件接觸的狀態下,控制前述旋轉機構使前述基板固持器旋轉,藉此使前述液體從前述液體保持部越過前述傾斜面而排出至前述傾斜面的外側。根據型態10,因為液體在徑向上平順地向外流動,故可效率良好地清洗接觸構件。[Mode 10] According to the mode 10, in the mode 9, the liquid holding portion is provided with an inclined surface having a height that becomes higher in the radial direction outward, and the control device is configured as follows: when the substrate is not mounted on the substrate In the case of a holder, in a state where the pressing member and the sealing member are brought into contact, the rotation mechanism is controlled to rotate the substrate holder, thereby causing the liquid to be discharged from the liquid holding portion across the inclined surface to the inclined surface. outside. According to the mode 10, since the liquid flows smoothly outward in the radial direction, the contact member can be cleaned efficiently.
[型態11]根據型態11,在型態5至10的任一型態中,前述控制裝置構成下述態樣:透過前述吐出口將前述液體吐出至前述空間後,控制前述旋轉機構使前述基板固持器旋轉,藉此使前述液體流動至前述液體保持部或使前述液體更均勻地分布於前述液體保持部中。根據型態11,在鍍覆處理時,可適當利用使形成之鍍覆的厚度更為均勻的旋轉機構,以對於接觸構件供給液體。[Mode 11] According to the mode 11, in any one of the modes 5 to 10, the control device is configured to control the rotation mechanism after the liquid is ejected into the space through the ejection port. The substrate holder rotates, thereby causing the liquid to flow to the liquid holding part or distributing the liquid more uniformly in the liquid holding part. According to the aspect 11, during the plating process, a rotating mechanism that makes the thickness of the plating formed more uniform can be appropriately used to supply the liquid to the contact member.
[型態12]根據型態12,在型態1至11的任一型態中,更具備使前述基板固持器傾斜的傾斜機構,前述控制裝置構成下述態樣:透過前述吐出口將前述液體吐出至前述空間後,控制前述傾斜機構使前述基板固持器傾斜,藉此使前述液體流動至前述液體保持部或使前述液體更均勻地分布於前述液體保持部中。根據型態12,可利用重力更確實地對於接觸構件供給液體。[Mode 12] According to Mode 12, in any one of Modes 1 to 11, a tilting mechanism for tilting the substrate holder is further provided, and the control device is configured as follows: after the liquid is ejected into the space through the ejection port, the tilting mechanism is controlled to tilt the substrate holder, thereby causing the liquid to flow to the liquid holding portion or causing the liquid to be more evenly distributed in the liquid holding portion. According to Mode 12, gravity can be used to more reliably supply the liquid to the contact member.
[型態13]根據型態13,在型態12中,前述控制裝置構成下述態樣:在控制前述升降機構以使安裝有前述基板的前述基板固持器浸漬於前述鍍覆槽時,控制前述傾斜機構使前述基板固持器傾斜,藉此使前述液體流動至前述液體保持部。根據型態13,可在避免氣泡進入被鍍覆面的情況下浸漬基板固持器,並且使液體流動至液體保持部。[Aspect 13] According to aspect 13, in aspect 12, the control device is configured to control the elevating mechanism so that the substrate holder mounted with the substrate is immersed in the plating tank. The tilting mechanism tilts the substrate holder, thereby causing the liquid to flow to the liquid holding portion. According to the mode 13, the substrate holder can be impregnated while preventing air bubbles from entering the surface to be plated, and the liquid can be caused to flow to the liquid holding portion.
[型態14]根據型態14,在型態1至13的任一型態中,前述控制裝置構成下述態樣:在前述液體保持部中,吐出預設量的前述液體,以使前述液體的液面高度位於前述基板的下表面與前述緊壓構件的上表面之間。根據型態14,一方面可充分以液體被覆接觸構件,一方面可減少溶存氧對於種子層造成不良的影響。又,可效率良好地使基板旋轉,減少液體流下至鍍覆液而稀釋鍍覆液的疑慮。[Mode 14] According to Mode 14, in any of Modes 1 to 13, the control device is configured as follows: in the liquid holding portion, a preset amount of the liquid is discharged so that the liquid level is located between the lower surface of the substrate and the upper surface of the pressing member. According to Mode 14, the contact member can be fully coated with the liquid, and the adverse effect of dissolved oxygen on the seed layer can be reduced. In addition, the substrate can be efficiently rotated, reducing the concern that the liquid will flow down to the coating liquid and dilute the coating liquid.
[型態15]根據型態15,在型態1至14的任一型態中,更具備排出口,其在前述液體保持部或與前述液體保持部連通的前述空間開口,而將存在於前述液體保持部內或前述空間中的前述液體排出。根據型態15,在基板未安裝於基板固持器上的狀態下,將液體所含有的混入物排出,而可抑制混入物對於接觸構件等造成不良的影響。[Mode 15] According to the mode 15, in any one of the modes 1 to 14, a discharge port is further provided, which opens in the liquid holding part or the space communicating with the liquid holding part, and is present in the liquid holding part. The liquid in the liquid holding part or the space is discharged. According to the aspect 15, when the substrate is not mounted on the substrate holder, contaminants contained in the liquid are discharged, thereby suppressing adverse effects of the contaminants on contact members and the like.
[型態16]根據型態16,在型態15中,前述排出口形成於構成前述液體保持部的側壁、以及前述基板固持器的旋轉軸及背板總成的至少一者。根據型態16,可縮短排出流路等,而因應需求進行靈活的設計。[Mode 16] According to Mode 16, in Mode 15, the discharge port is formed on a side wall constituting the liquid holding portion, and at least one of the rotation axis and the back plate assembly of the substrate holder. According to Mode 16, the discharge flow path can be shortened, and a flexible design can be performed according to needs.
[型態17]根據型態17,在型態15或16中,前述基板固持器更具備將前述排出口與前述基板固持器的外部連通的流路。根據型態17,可適當調整以避免排出之液體流下至鍍覆液而稀釋鍍覆液。[Mode 17] According to Mode 17, in Mode 15 or 16, the substrate holder is further provided with a flow path connecting the discharge port with the outside of the substrate holder. According to Mode 17, appropriate adjustment can be made to prevent the discharged liquid from flowing down to the coating liquid and diluting the coating liquid.
[型態18]根據型態18,在型態15或16中,前述基板固持器更具備在不通過前述液體保持部及前述空間的情況下將前述排出口與前述吐出口連通的流路,前述控制裝置構成將從前述排出口排出之前述液體從前述吐出口吐出的態樣。根據型態18,可效率良好地使用液體並且減少混入物對於接觸構件等造成不良的影響。[Mode 18] According to the mode 18, in the mode 15 or 16, the substrate holder further has a flow path that communicates the discharge port and the discharge port without passing through the liquid holding part and the space, The control device is configured to discharge the liquid from the discharge port before it is discharged from the discharge port. According to type 18, liquid can be used efficiently and adverse effects of contaminants on contact members and the like can be reduced.
[型態19]根據型態19,在型態18中,更具備配置於前述流路的離子交換樹脂及導電度計的至少一者。根據型態19,可在導電度低的狀態下將已排出之液體從吐出口吐出。[Aspect 19] According to aspect 19, in aspect 18, it further includes at least one of an ion exchange resin and a conductivity meter arranged in the flow path. According to the type 19, the discharged liquid can be discharged from the discharge port while the conductivity is low.
[型態20]根據型態20,在型態15至19的任一型態中,前述控制裝置構成下述態樣:在前述基板安裝於前述基板固持器的狀態下,同時進行或是在不同時間進行從前述吐出口吐出前述液體的吐出動作以及將保持於前述液體保持部的前述液體的至少一部分從前述排出口排出的排出動作。根據型態20,可保持於基板固持器的液體量未受到限制,可將更大量的液體供給至液體保持部,而可進一步抑制混入物對於接觸構件等造成不良的影響。[Mode 20] According to Mode 20, in any one of Modes 15 to 19, the control device is configured such that, when the substrate is mounted on the substrate holder, the liquid is ejected from the ejection port and at the same time or at different times, at least a portion of the liquid held in the liquid holding portion is ejected from the discharge port. According to Mode 20, the amount of liquid that can be held in the substrate holder is not limited, a larger amount of liquid can be supplied to the liquid holding portion, and the adverse effects of mixed matter on the contact member and the like can be further suppressed.
[型態21]根據型態21,在型態20中,前述控制裝置構成下述態樣:在安裝有前述基板的前述基板固持器浸漬於前述鍍覆液的狀態下,進行前述吐出動作及前述排出動作。根據型態21,可將因為浸漬而進入裡面的鍍覆液等混入物排出,而可減少混入物對於接觸構件等造成不良的影響。[Mode 21] According to Mode 21, in Mode 20, the control device is configured such that the ejection action and the discharge action are performed while the substrate holder on which the substrate is mounted is immersed in the coating liquid. According to Mode 21, impurities such as the coating liquid that have entered the substrate due to immersion can be discharged, and the adverse effects of the impurities on contact components can be reduced.
[型態22]根據型態22,在型態21中,前述控制裝置構成下述態樣:以使前述基板固持器中之前述液體的液面低於前述鍍覆液之液面的方式,將使前述基板固持器浸漬於前述鍍覆液。根據型態22,因為鍍覆液的水壓高於基板固持器內部之液體的水壓,故可抑制該液體洩漏而稀釋鍍覆液。[Mode 22] According to the mode 22, in the mode 21, the control device is configured such that the liquid level of the liquid in the substrate holder is lower than the liquid level of the plating liquid, The substrate holder is immersed in the plating liquid. According to Mode 22, since the water pressure of the plating liquid is higher than the water pressure of the liquid inside the substrate holder, leakage of the liquid can be suppressed and the plating liquid can be diluted.
[型態23]根據型態23,在型態21或22中,前述控制裝置構成下述態樣:在前述鍍覆處理正在進行的狀態下,進行前述吐出動作及前述排出動作。根據型態23,可更確實地在進行鍍覆處理的期間抑制混入物對於接觸構件等造成不良的影響。[Mode 23] According to the mode 23, in the mode 21 or 22, the control device is configured to perform the ejection operation and the discharge operation while the plating process is in progress. According to the aspect 23, it is possible to more reliably suppress the adverse effects of contaminants on contact members and the like during the plating process.
[型態24]根據型態24,在型態20至23的任一型態中,前述控制裝置構成下述態樣:在進行了前述鍍覆處理後、前述基板卸除之前,進行前述排出動作。根據型態24,可抑制在將基板卸除時液體流下至鍍覆液而稀釋鍍覆液。[Mode 24] According to Mode 24, in any one of Modes 20 to 23, the control device is configured such that the discharge operation is performed after the coating process is performed and before the substrate is removed. According to Mode 24, it is possible to suppress the liquid from flowing down into the coating liquid and diluting the coating liquid when the substrate is removed.
[型態25]根據型態25,在型態20至24的任一型態中,前述控制裝置構成下述態樣:間歇性地進行前述吐出動作及前述排出動作的至少一者。根據型態25,一方面可效率良好地使用液體,一方面可減少混入物對於接觸構件等造成不良的影響。[Form 25] According to Form 25, in any one of Forms 20 to 24, the control device is configured to intermittently perform at least one of the spitting action and the discharge action. According to Form 25, the liquid can be used efficiently, and the adverse effects of mixed substances on contact components can be reduced.
[型態26]根據型態26,在型態20至24的任一型態中,前述控制裝置構成下述態樣:在前述鍍覆處理的期間,持續進行前述吐出動作及前述排出動作的至少一者。根據型態26,可更確實地減少混入物對於接觸構件等造成不良的影響。[Form 26] According to Form 26, in any one of Forms 20 to 24, the control device is configured such that at least one of the ejection action and the discharge action is continuously performed during the coating process. According to Form 26, the adverse effects of the mixed matter on the contact components can be more reliably reduced.
[型態27]根據型態27,在型態1至26的任一型態中,前述液體具有低於既定閾值的導電度,或是經過脫氣處理。根據型態27,可抑制液體所包含的離子或溶存氧等對於接觸構件等造成不良的影響。[Type 27] According to Type 27, in any one of Types 1 to 26, the liquid has a conductivity lower than a predetermined threshold or is degassed. According to the type 27, it is possible to suppress adverse effects of ions, dissolved oxygen, etc. contained in the liquid on contact members and the like.
[型態28]根據型態28,提出一種鍍覆方法,其係藉由鍍覆裝置進行鍍覆處理的鍍覆方法,該鍍覆裝置具備:鍍覆槽,構成容納鍍覆液的態樣;基板固持器,構成保持基板的態樣,該基板是進行鍍覆處理的對象;旋轉機構,使前述基板固持器旋轉;及升降機構,使前述基板固持器升降;前述基板固持器具備:接觸構件,構成接觸前述基板而可供電的態樣;密封構件,構成將前述基板固持器與前述基板之間密封的態樣;液體保持部,內部具有前述接觸構件,前述液體保持部構成在前述基板固持器與前述基板之間由前述密封構件所密封時可保持液體的態樣;及吐出口,在前述液體保持部或在前述基板固持器中與前述液體保持部連通之空間開口,或是可配置於前述基板固持器的側邊;該鍍覆方法包含:將前述基板安裝於前述基板固持器的步驟;從前述吐出口吐出前述液體的步驟;使前述基板固持器旋轉以使所吐出之前述液體流動至前述液體保持部或使前述液體在前述液體保持部中均勻分布的步驟;及對於已安裝的前述基板進行前述鍍覆處理的步驟。根據型態28,可抑制基板固持器內部的混入物對於接觸構件等造成不良的影響。[Form 28] According to Form 28, a coating method is proposed, which is a coating method in which a coating process is performed by a coating device, wherein the coating device comprises: a coating tank configured to contain a coating liquid; a substrate holder configured to hold a substrate to be subjected to the coating process; a rotating mechanism configured to rotate the substrate holder; and a lifting mechanism configured to lift the substrate holder; the substrate holder comprises: a contact member configured to contact the substrate to supply electricity; a sealing member configured to seal the substrate holder and the substrate; a liquid retaining portion having the contact member therein, the liquid retaining portion The substrate holder and the substrate are configured to be sealed by the sealing member so as to retain the liquid; and the outlet is opened in the liquid retaining portion or in the space in the substrate holder that is connected to the liquid retaining portion, or can be arranged on the side of the substrate holder; the coating method includes: the step of mounting the substrate on the substrate holder; the step of discharging the liquid from the outlet; the step of rotating the substrate holder so that the discharged liquid flows to the liquid retaining portion or the liquid is evenly distributed in the liquid retaining portion; and the step of performing the coating treatment on the mounted substrate. According to the form 28, it is possible to suppress the adverse effects of the impurities in the substrate holder on the contact member and the like.
以上說明本發明的實施的型態,但上述發明的實施的型態係用以使本發明容易理解,並未限定本發明。本發明只要不脫離其主旨即可變更、改良,本發明當然包含其均等物。又,在可解決上述課題的至少一部分的範圍或是可發揮至少部分效果的範圍內,可任意組合實施型態及變形例,記載於申請專利範圍及說明書中的各構成要件可任意組合或省略。The embodiments of the present invention have been described above. However, the embodiments of the invention described above are used to make the present invention easier to understand and do not limit the present invention. The present invention can be modified and improved without departing from the gist of the invention, and the present invention naturally includes equivalents thereof. In addition, the embodiments and modifications may be arbitrarily combined within the scope in which at least part of the above-mentioned problems can be solved or at least part of the effects may be exerted, and the constituent elements described in the patent application and the specification may be arbitrarily combined or omitted. .
40A,40B,40C:凹部 50,51:供給流路 60,61,62:吐出口 80,81,82:排出流路 90,91,92:排出口 100:裝載埠 110:運送機器人 120:對準器 200:預濕模組 300:預浸模組 400,400A,400B,400C,4000, 4000A:鍍覆模組 4400B:基板固持器 405:溢流槽 406:導電度計 406T:托盤 407:離子交換管柱 410:鍍覆槽 420:隔膜 422:陰極區域 424:陽極區域 430:陽極 440,440A,440B,4400,4400A, 4400B,4400C:基板固持器 442:第1升降機構 443:第2升降機構 446:旋轉機構 447:傾斜機構 450:阻力體 470:清洗裝置 474:手臂 476:驅動機構 478:托盤構件 482:清洗噴嘴 490:支撐部 491:旋轉軸 492:背板總成 492-1:背板 492-2,492-2A,492-2B,492-2C:浮動板 492-3:按壓機構 492-4:浮動機構 493:第1上部構件 494,494A,4940:支撐機構 494L:液體保持部 494S:傾斜面 494-1:支撐構件 494-1a:凸緣 494-2:密封構件 494-3:台座 494-4:接觸構件 494-4a:基板接點 494-4b:本體部 494-5:導電構件 496:第2上部構件 500:洗淨模組 600:液體供給裝置 610:噴嘴 700:運送裝置 800:控制模組 801:CPU 802:記憶體 1000:鍍覆裝置 A10:箭號 A20:箭號 A30:箭號 A40:箭號 A50:箭號 Ax1:浮動板之中心軸 BS:浮動板的背面 H1:被鍍覆面的高度 H2:浮動板的背面的高度 HL1:所吐出之液體的液面的高度 HS:鍍覆液的液面的高度 L1,L2:液體 S1:內部空間 Wf:基板 Wf-a:被鍍覆面 S100:底面 S101~S105,S201~S205,S301~ S304,S401~405,S501~S506, S601~S604,S701~S703:步驟 40A, 40B, 40C: recess 50, 51: supply flow path 60, 61, 62: outlet 80, 81, 82: discharge flow path 90, 91, 92: outlet 100: loading port 110: transport robot 120: aligner 200: pre-wetting module 300: pre-preg module 400, 400A, 400B, 400C, 4000, 4000A: coating module 4400B: substrate holder 405: overflow tank 406: conductivity meter 406T: tray 407: ion exchange column 410: coating tank 420: diaphragm 422: cathode area 424: Anode area 430: Anode 440,440A,440B,4400,4400A, 4400B,4400C: Substrate holder 442: First lifting mechanism 443: Second lifting mechanism 446: Rotation mechanism 447: Tilt mechanism 450: Resistance body 470: Cleaning device 474: Arm 476: Driving mechanism 478: Tray member 482: Cleaning nozzle 490: Support part 491: Rotation axis 492: Back plate assembly 492-1: Back plate 492-2,492-2A,492-2B,492-2C: Floating plate 492-3: Pressing mechanism 492-4: Floating mechanism 493: First upper member 494,494A,4940: Support mechanism 494L: Liquid holding part 494S: Inclined surface 494-1: Support member 494-1a: Flange 494-2: Sealing member 494-3: Base 494-4: Contact member 494-4a: Substrate contact 494-4b: Body 494-5: Conductive member 496: Second upper member 500: Cleaning module 600: Liquid supply device 610: Nozzle 700: Transport device 800: Control module 801:CPU 802:Memory 1000:Coating device A10:arrow A20:arrow A30:arrow A40:arrow A50:arrow Ax1:Center axis of floating plate BS:Back side of floating plate H1:Height of coated surface H2:Height of back side of floating plate HL1:Height of liquid level of discharged liquid HS:Height of coating liquid level L1,L2:Liquid S1:Internal space Wf:Substrate Wf-a:Coated surface S100:Bottom surface S101~S105,S201~S205,S301~ S304,S401~405,S501~S506, S601~S604,S701~S703: Steps
圖1係顯示第1實施型態的鍍覆裝置之整體構成的立體圖。 圖2係顯示第1實施型態的鍍覆裝置之整體構成的俯視圖。 圖3係示意顯示第1實施型態的鍍覆模組之構成的縱剖面圖。 圖4係示意顯示第1實施型態之基板固持器的縱剖面圖。 圖5係示意顯示第1實施型態的接觸構件之基板固持器的縱剖面圖。 圖6係示意顯示基板固持器之液體保持部的縱剖面圖。 圖7係顯示第1實施型態的控制模組之構成的概念圖。 圖8係說明第1實施型態之鍍覆方法的基板固持器之縱剖面圖。 圖9係說明第1實施型態之鍍覆方法的基板固持器之縱剖面圖。 圖10係說明第1實施型態之鍍覆方法的基板固持器之縱剖面圖。 圖11係說明第1實施型態之鍍覆方法的基板固持器之縱剖面圖。 圖12係說明第1實施型態之鍍覆方法的基板固持器之縱剖面圖。 圖13係說明第1實施型態之鍍覆方法的基板固持器之縱剖面圖。 圖14係示意顯示液體保持部的放大剖面圖。 圖15係顯示第1實施型態之鍍覆方法之流程的流程圖。 圖16係示意顯示變形例1-1之浮動板的俯視圖。 圖17示意顯示變形例1-2之浮動板的俯視圖。 圖18係說明變形例1-3之鍍覆方法的縱剖面圖。 圖19係顯示變形例1-3之鍍覆方法之流程的流程圖。 圖20係示意顯示變形例1-4之鍍覆模組的縱剖面圖。 圖21係示意顯示變形例1-4之浮動板的俯視圖。 圖22係說明變形例1-4之鍍覆方法的基板固持器之縱剖面圖。 圖23係說明變形例1-4之鍍覆方法的基板固持器之縱剖面圖。 圖24係說明變形例1-4之鍍覆方法的基板固持器之縱剖面圖。 圖25係示意顯示變形例1-5的鍍覆模組的縱剖面圖。 圖26係顯示變形例1-5之鍍覆方法之流程的流程圖。 圖27係示意顯示變形例1-6之基板固持器的縱剖面圖。 圖28係說明變形例1-6之鍍覆方法的基板固持器之縱剖面圖。 圖29係顯示變形例1-6之鍍覆方法之流程的流程圖。 圖30係示意顯示第2實施型態的鍍覆裝置的縱剖面圖。 圖31係顯示第2實施型態之鍍覆方法之流程的流程圖。 圖32係顯示變形例2-1之鍍覆方法之流程的流程圖。 圖33係顯示變形例2-2之鍍覆方法之流程的流程圖。 圖34係說明變形例2-3之鍍覆方法的鍍覆模組之縱剖面圖。 圖35係示意顯示變形例2-4之基板固持器的縱剖面圖。 圖36係示意顯示變形例2-5之基板固持器的縱剖面圖。 圖37係示意顯示變形例2-6之鍍覆模組的縱剖面圖。 圖38係顯示變形例2-6之接觸構件的概念圖。 FIG. 1 is a perspective view showing the overall structure of the coating device of the first embodiment. FIG. 2 is a top view showing the overall structure of the coating device of the first embodiment. FIG. 3 is a longitudinal sectional view schematically showing the structure of the coating module of the first embodiment. FIG. 4 is a longitudinal sectional view schematically showing the substrate holder of the first embodiment. FIG. 5 is a longitudinal sectional view schematically showing the substrate holder of the contact member of the first embodiment. FIG. 6 is a longitudinal sectional view schematically showing the liquid holding portion of the substrate holder. FIG. 7 is a conceptual diagram showing the structure of the control module of the first embodiment. FIG. 8 is a longitudinal sectional view of the substrate holder for explaining the coating method of the first embodiment. FIG. 9 is a longitudinal sectional view of a substrate holder for illustrating the coating method of the first embodiment. FIG. 10 is a longitudinal sectional view of a substrate holder for illustrating the coating method of the first embodiment. FIG. 11 is a longitudinal sectional view of a substrate holder for illustrating the coating method of the first embodiment. FIG. 12 is a longitudinal sectional view of a substrate holder for illustrating the coating method of the first embodiment. FIG. 13 is a longitudinal sectional view of a substrate holder for illustrating the coating method of the first embodiment. FIG. 14 is an enlarged sectional view schematically showing a liquid holding portion. FIG. 15 is a flow chart showing the process of the coating method of the first embodiment. FIG. 16 is a top view schematically showing the floating plate of Modification 1-1. FIG. 17 schematically shows a top view of a floating plate of variant 1-2. FIG. 18 is a longitudinal cross-sectional view illustrating a coating method of variant 1-3. FIG. 19 is a flow chart showing a process of a coating method of variant 1-3. FIG. 20 is a longitudinal cross-sectional view schematically showing a coating module of variant 1-4. FIG. 21 is a schematic top view of a floating plate of variant 1-4. FIG. 22 is a longitudinal cross-sectional view of a substrate holder illustrating a coating method of variant 1-4. FIG. 23 is a longitudinal cross-sectional view of a substrate holder illustrating a coating method of variant 1-4. FIG. 24 is a longitudinal cross-sectional view of a substrate holder illustrating a coating method of variant 1-4. FIG. 25 is a schematic longitudinal section view of a coating module of variant 1-5. FIG. 26 is a flow chart showing the process of the coating method of variant 1-5. FIG. 27 is a schematic longitudinal section view of a substrate holder of variant 1-6. FIG. 28 is a longitudinal section view of a substrate holder for explaining the coating method of variant 1-6. FIG. 29 is a flow chart showing the process of the coating method of variant 1-6. FIG. 30 is a schematic longitudinal section view of a coating device of the second embodiment. FIG. 31 is a flow chart showing the process of the coating method of the second embodiment. FIG. 32 is a flow chart showing the process of the coating method of variant 2-1. FIG. 33 is a flow chart showing the process of the coating method of variant 2-2. FIG. 34 is a longitudinal cross-sectional view of a coating module for explaining the coating method of variant 2-3. FIG. 35 is a longitudinal cross-sectional view schematically showing a substrate holder of variant 2-4. FIG. 36 is a longitudinal cross-sectional view schematically showing a substrate holder of variant 2-5. FIG. 37 is a longitudinal cross-sectional view schematically showing a coating module of variant 2-6. FIG. 38 is a conceptual diagram showing a contact member of variant 2-6.
50:供給流路 50: Supply flow path
60:吐出口 60: Spit out
440:基板固持器 440: Substrate holder
442:第1升降機構 442: The first lifting mechanism
443:第2升降機構 443: The second lifting mechanism
446:旋轉機構 446: Rotating mechanism
490:支撐部 490: Support part
491:旋轉軸 491: Rotation axis
492:背板總成 492: Back panel assembly
492-1:背板 492-1:Back plate
492-2:浮動板 492-2: Floating board
492-3:按壓機構 492-3: Pressing mechanism
492-4:浮動機構 492-4: Floating mechanism
493:第1上部構件 493: 1st upper member
494:支撐機構 494:Support mechanism
496:第2上部構件 496: The second upper component
A10:箭號 A10: Arrow
A20:箭號 A20: Arrow
Wf:基板 Wf: substrate
Wf-a:被鍍覆面 Wf-a: plated surface
Claims (28)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111131451A TWI837780B (en) | 2022-08-22 | 2022-08-22 | Plating device and plating method |
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| JP4330380B2 (en) * | 2003-05-29 | 2009-09-16 | 株式会社荏原製作所 | Plating apparatus and plating method |
| US7138039B2 (en) * | 2003-01-21 | 2006-11-21 | Applied Materials, Inc. | Liquid isolation of contact rings |
| JP6799395B2 (en) * | 2016-06-30 | 2020-12-16 | 株式会社荏原製作所 | Substrate holders, transfer systems that convey substrates in electronic device manufacturing equipment, and electronic device manufacturing equipment |
| JP6893142B2 (en) * | 2017-07-25 | 2021-06-23 | 上村工業株式会社 | Work holding jig and electroplating equipment |
| KR102401521B1 (en) * | 2021-02-25 | 2022-05-24 | 가부시키가이샤 에바라 세이사꾸쇼 | Plating apparatus and method of removing air bubbles in plating apparatus |
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