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TW202319442A - Polyamic acid, polyimide, and use thereof - Google Patents

Polyamic acid, polyimide, and use thereof Download PDF

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TW202319442A
TW202319442A TW111123597A TW111123597A TW202319442A TW 202319442 A TW202319442 A TW 202319442A TW 111123597 A TW111123597 A TW 111123597A TW 111123597 A TW111123597 A TW 111123597A TW 202319442 A TW202319442 A TW 202319442A
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polyimide film
hydrocarbon group
carbons
polyamic acid
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橫山正幸
德田桂也
奧山哲雄
前田鄉司
涌井洋行
渡邊直樹
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日商東洋紡股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/34Layered products comprising a layer of synthetic resin comprising polyamides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors

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Abstract

Provided is a polyamic acid that is a copolymerization reaction product of at least carboxylic acids, diamines, and a silsesquioxane compound A having a dicarboxylic anhydride group, wherein the silsesquioxane compound A is obtained by reacting: a thiol group of a condensate B of a thiol-group-containing trialkoxysilane a1 represented by the general formula: R1Si(OR2)3 (in the formula, R1 represents an organic group such as a C1-8 aliphatic hydrocarbon group in which at least 1 hydrogen is substituted by a thiol group, and R2 each independently represent a hydrogen atom, a C1-8 aliphatic hydrocarbon group, etc.) and a thiol-group-free trialkoxysilane a2; and a reactive group composed of a vinyl group, etc., in a dicarboxylic anhydride C having the reactive group.

Description

聚醯胺酸、聚醯亞胺、及其用途Polyamic acid, polyimide, and uses thereof

本發明係關於包含新穎的矽倍半氧烷(silsesquioxane)化合物作為共聚合成分的聚醯胺酸、將此進行醯亞胺化而成的聚醯亞胺及其用途,作為該用途,可列舉例如:聚醯亞胺膜、其積層體、可撓式電子元件(flexible electronic device)等。The present invention relates to a polyamic acid containing a novel silsesquioxane compound as a copolymerization component, a polyimide obtained by imidizing this, and its use. Examples of the use include For example: polyimide film, its laminated body, flexible electronic device, etc.

聚醯亞胺膜具有優良的耐熱性、良好的機械特性而且作為可撓性材料而被廣泛用於電氣及電子領域。然而,一般的聚醯亞胺膜會著色成黃褐色,故無法應用於顯示裝置等的需要透光的部分。Polyimide films have excellent heat resistance, good mechanical properties, and are widely used in electrical and electronic fields as flexible materials. However, a general polyimide film is colored yellowish brown, so it cannot be applied to parts such as display devices that require light transmission.

另一方面,顯示裝置邁向薄型化、輕量化,並進一步要求可撓化。因此逐漸嘗試將基板材料從玻璃基板替換成可撓性高分子膜基板。然而,著色的聚醯亞胺膜,無法用作藉由開啟/關閉透光來進行顯示的液晶顯示器之基板材料,僅能應用於顯示裝置的驅動電路所搭載的TAB、COF等周邊電路、以及反射型顯示方式或是自發光型顯示裝置中的背面側等極少一部分。On the other hand, display devices are becoming thinner and lighter, and further require flexibility. Therefore, attempts have been made to replace the substrate material from glass substrates with flexible polymer film substrates. However, the colored polyimide film cannot be used as a substrate material of a liquid crystal display that displays by turning on/off light transmission, and can only be applied to peripheral circuits such as TAB and COF mounted on the driving circuit of the display device, and There are very few such as the rear side of reflective display or self-luminous display devices.

因為這樣的背景,而朝向開發無色透明之聚醯亞胺膜。使用聚醯亞胺膜作為可撓式電子電路基板的情況,除了無色透明性、低線膨脹率(CTE)、低遲滯(Rth)以外,必須對於彎折具有耐性以及在電路形成時的高溫條件下保持機械強度,因此要求高的彈性係數、機械強度以及高的玻璃轉移溫度(Tg)。Because of this background, we are heading towards the development of colorless and transparent polyimide film. When using polyimide film as a flexible electronic circuit board, in addition to colorless transparency, low coefficient of linear expansion (CTE), and low hysteresis (Rth), resistance to bending and high temperature conditions during circuit formation are required To maintain mechanical strength, it requires high modulus of elasticity, mechanical strength and high glass transition temperature (Tg).

作為代表例,有人嘗試開發使用了氟化聚醯亞胺樹脂以及半脂環式或全脂環式聚醯亞胺樹脂等無色透明聚醯亞胺膜(專利文獻1~3)。此等的膜著色少,且具有透明性,但機械強度增加不如著色的聚醯亞胺膜,又在工業生產以及預設暴露於高溫之用途的情況中,會發生熱分解或氧化反應等,並不一定能保持無色性、透明性。As a representative example, attempts have been made to develop and use colorless and transparent polyimide films such as fluorinated polyimide resins and semi-alicyclic or fully alicyclic polyimide resins (Patent Documents 1 to 3). These films have less coloring and are transparent, but the increase in mechanical strength is not as good as that of colored polyimide films, and thermal decomposition or oxidation reactions will occur in industrial production and intended exposure to high temperatures. Colorlessness and transparency may not always be maintained.

從此觀點來看,有人提出了一邊噴射規定了氧含量的氣體一邊進行加熱處理的方法(專利文獻4),但氧濃度小於18%的環境,其製造成本高,工業生產極為困難。From this point of view, a method of performing heat treatment while spraying gas with a predetermined oxygen content has been proposed (Patent Document 4). However, in an environment with an oxygen concentration of less than 18%, the production cost is high and industrial production is extremely difficult.

又,作為進一步提升有機材料特性的手段,具有所謂的有機-無機混成化技術,其係藉由將有機材料與無機材料複合化而賦予無機材料的特性、即高的耐熱性、耐化學藥品性、高的表面硬度等。例如,已知藉由將透明聚醯亞胺與二氧化矽奈米粒子複合化,可維持透明性並且改善CTE及Rth、Tg。然而隨著二氧化矽奈米粒子的混合量增加,具有膜變得硬脆、機械強度降低的課題。Also, as a means to further improve the properties of organic materials, there is a so-called organic-inorganic hybrid technology, which is to impart the properties of inorganic materials, that is, high heat resistance and chemical resistance, by compounding organic materials and inorganic materials. , high surface hardness, etc. For example, it is known that CTE, Rth, and Tg can be improved while maintaining transparency by compounding transparent polyimide and silica nanoparticles. However, as the mixing amount of silica nanoparticles increases, there is a problem that the film becomes hard and brittle, and the mechanical strength decreases.

另一方面,在以RSiO 3/2表示的矽倍半氧烷中,藉由使R具有可與有機材料反應的取代基,可輕易地提供有機-無機混成硬化物,因此正邁向實用化的研究(例如專利文獻5)。已嘗試藉由將具有柔軟性的矽倍半氧烷與聚醯亞胺複合化來提高耐熱性及加工性。已知藉由聚醯亞胺的醯亞胺部與矽倍半氧烷的電荷移動相互作用,會使熱分解溫度提升(非專利文獻1)。 [先前技術文獻] [專利文獻] On the other hand, in silsesquioxane represented by RSiO 3/2 , by giving R a substituent capable of reacting with an organic material, it is possible to easily provide an organic-inorganic hybrid cured product, so it is moving toward practical use research (for example, Patent Document 5). Attempts have been made to improve heat resistance and processability by compounding flexible silsesquioxane and polyimide. It is known that the thermal decomposition temperature increases due to the charge transfer interaction between the imide portion of polyimide and silsesquioxane (Non-Patent Document 1). [Prior Art Document] [Patent Document]

[專利文獻1] 日本特開平11-106508號公報 [專利文獻2] 日本特開2002-146021號公報 [專利文獻3] 日本特開2002-348374號公報 [專利文獻4] WO2008/146637號公報 [專利文獻5] 日本專利第3653976號公報 [非專利文獻] [Patent Document 1] Japanese Patent Application Laid-Open No. 11-106508 [Patent Document 2] Japanese Patent Laid-Open No. 2002-146021 [Patent Document 3] Japanese Patent Laid-Open No. 2002-348374 [Patent Document 4] WO2008/146637 Publication [Patent Document 5] Japanese Patent No. 3653976 [Non-patent literature]

[非專利文獻1]Thermochimica Acta 2004, 417, pp.133-142 [非專利文獻2]European Polymer Journal 2011, 47 (6)、 pp. 1328-1337 [Non-Patent Document 1] Thermochimica Acta 2004, 417, pp.133-142 [Non-Patent Document 2] European Polymer Journal 2011, 47 (6), pp. 1328-1337

[發明欲解決之課題][Problem to be solved by the invention]

然而,具有柔軟性的矽倍半氧烷結構使得聚醯亞胺的剛性降低,因此矽倍半氧烷複合聚醯亞胺通常具有呈現比較低的彈性係數及低Tg這樣的問題(非專利文獻2)。However, the flexible silsesquioxane structure reduces the rigidity of polyimides, so silsesquioxane composite polyimides usually have the problems of relatively low modulus of elasticity and low Tg (non-patent literature 2).

如上所述,製造具有低的線膨脹係數與高的耐熱性且機械強度高的無色透明聚醯亞胺膜是非常困難。半脂環式或全脂環式的聚醯亞胺中,若增加具有脂環式結構的單體成分,無色透明性雖提升,但機械強度降低而難以生產作為薄膜。另一方面,若導入芳香族的單體,雖韌性提升而薄膜的機械特性有所改善,但變得容易著色,無色透明性降低。藉由導入折射率與樹脂成分相近的填充物(無機成分),耐熱性與無色透明性改善,而且線膨脹係數降低,加工適性改善,但樹脂物性變得硬脆,機械特性降低。As described above, it is very difficult to manufacture a colorless and transparent polyimide film having a low coefficient of linear expansion, high heat resistance, and high mechanical strength. In the semi-alicyclic or fully alicyclic polyimide, if the monomer component having the alicyclic structure is added, the colorless transparency is improved, but the mechanical strength is lowered, making it difficult to produce as a film. On the other hand, if an aromatic monomer is introduced, although the toughness is improved and the mechanical properties of the film are improved, it becomes easy to be colored and the colorless transparency decreases. By introducing a filler (inorganic component) whose refractive index is similar to that of the resin component, the heat resistance and colorless transparency are improved, and the linear expansion coefficient is reduced, and the processing suitability is improved, but the physical properties of the resin become hard and brittle, and the mechanical properties decrease.

因此,耐熱性、機械特性等實用特性與無色性(透明性或白色性)為權衡關係,特別期望出現一種維持其他主要特性的同時韌性經改善的聚醯亞胺膜之製造方法。Therefore, practical properties such as heat resistance and mechanical properties are in a trade-off relationship with colorlessness (transparency or whiteness), and a method for producing a polyimide film with improved toughness while maintaining other main properties is particularly desired.

於是,本發明之目的在於提供一種可用作製造維持其他主要特性的同時韌性經改善的聚醯亞胺膜之原料等的聚醯胺酸。又,本發明之另一目的在於提供一種包含這種聚醯胺酸的聚醯胺酸組成物、及將該聚醯胺酸進行醯亞胺化而成的聚醯亞胺。Therefore, an object of the present invention is to provide a polyamic acid which can be used as a raw material and the like for producing a polyimide film whose toughness is improved while maintaining other main characteristics. Another object of the present invention is to provide a polyamic acid composition including such a polyamic acid, and a polyimide obtained by imidizing the polyamic acid.

再者,本發明之另一目的在於提供一種維持其他主要特性的同時韌性經改善的聚醯亞胺膜、其積層體、以及使用了聚醯亞胺膜的可撓式電子元件、以及其製造方法。 [用以解決課題之手段] Furthermore, another object of the present invention is to provide a polyimide film with improved toughness while maintaining other main characteristics, its laminate, and a flexible electronic component using the polyimide film, and its manufacture. method. [Means to solve the problem]

本案發明人等為了解決上述課題而深入研究,結果發現包含藉由與硫醇基的反應而導入二羧酸酐基的新穎矽倍半氧烷化合物作為共聚合成分的聚醯胺酸可達成上述目的,進而完成了本發明。The inventors of the present invention conducted intensive studies to solve the above-mentioned problems, and as a result, found that a polyamic acid containing a novel silsesquioxane compound that introduces a dicarboxylic anhydride group through a reaction with a thiol group as a copolymerization component can achieve the above-mentioned object. , and then completed the present invention.

亦即,本發明包含以下的內容。That is, the present invention includes the following matters.

[1] 一種聚醯胺酸,其係至少羧酸類、二胺類與具有二羧酸酐基之矽倍半氧烷化合物A的共聚合反應物,其中, 前述矽倍半氧烷化合物A係由下述a1與a2之縮合物B的硫醇基與二羧酸酐C的反應性基反應而成; 通式:R 1Si(OR 2) 3表示的含硫醇基之三烷氧基矽烷類a1; (式中,R 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基的至少一個氫被取代為硫醇基的有機基,R 2相互獨立地表示氫原子、碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基) 不具有硫醇基的三烷氧基矽烷類a2; 該二羧酸酐C的反應性基係選自乙烯基、烯基、環烯基、炔基及醯氯基之中的至少一種反應性基。 [1] A polyamic acid, which is a copolymerization reaction product of at least carboxylic acids, diamines, and a silsesquioxane compound A having a dicarboxylic anhydride group, wherein the aforementioned silsesquioxane compound A is composed of The thiol group of the condensate B of a1 and a2 reacts with the reactive group of dicarboxylic acid anhydride C; General formula: Trialkoxysilanes containing thiol groups represented by R 1 Si(OR 2 ) 3 a1; (wherein, R 1 represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons, at least one hydrogen of which is substituted with a thiol group Organic group, R2 each independently represents a hydrogen atom, an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons or an aromatic hydrocarbon group with 6 to 8 carbons) Alkoxysilanes a2; The reactive group of the dicarboxylic acid anhydride C is at least one reactive group selected from vinyl, alkenyl, cycloalkenyl, alkynyl and acyl chloride.

[2] 一種聚醯胺酸,其係至少羧酸類、二胺類與具有二羧酸酐基之矽倍半氧烷化合物A的共聚合反應物,其中, 前述矽倍半氧烷化合物A具有下述通式(1)及(2)表示的結構單元。 [2] A polyamic acid, which is a copolymerization reaction product of at least carboxylic acids, diamines, and a silsesquioxane compound A having a dicarboxylic anhydride group, wherein, The aforementioned silsesquioxane compound A has structural units represented by the following general formulas (1) and (2).

Figure 02_image001
Figure 02_image001

(式中,Q 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基,Q 2為單鍵、碳數1~8的烴基、碳數1~8的烴基中的一個以上之碳原子被氧所取代的有機基或羰基,X為碳-碳鍵或碳數4~10的脂肪族環、碳數6~10的芳香族環、或是構成此等之碳的一部分被氧或硫所取代的雜環;與此等鍵結之氫的一個以上亦可被烴基所取代;1.0≤m≤2.0;1.4≤n≤1.6)。

Figure 02_image003
(wherein, Q 1 represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons, Q 2 is a single bond, an aliphatic hydrocarbon with 1 to 8 carbons Hydrocarbon group, organic group or carbonyl group in which one or more carbon atoms in a hydrocarbon group with 1 to 8 carbon atoms is replaced by oxygen, X is a carbon-carbon bond or an aliphatic ring with 4 to 10 carbon atoms, and an aromatic group with 6 to 10 carbon atoms A group ring, or a heterocycle in which part of the carbon constituting these is replaced by oxygen or sulfur; more than one of the hydrogens bonded to these rings may also be replaced by a hydrocarbon group; 1.0≤m≤2.0; 1.4≤n≤1.6 ).
Figure 02_image003

(式中,Q 3表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基;1.4≤n≤1.6)。 [3] 如[1]或[2]之聚醯胺酸,其中前述矽倍半氧烷化合物A中的前述三烷氧基矽烷類a2之莫耳比([a2的莫耳數]/[a1的莫耳數+a2的莫耳數])或通式(2)表示的結構單元之莫耳比([結構單元(2)]/[結構單元(1)+結構單元(2)])為0.1以上0.7以下。 (wherein, Q represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons; 1.4≤n≤1.6). [3] The polyamic acid according to [1] or [2], wherein the molar ratio of the trialkoxysilanes a2 in the aforementioned silsesquioxane compound A ([the number of moles of a2]/[ The molar number of a1 + the molar number of a2]) or the molar ratio of the structural unit represented by the general formula (2) ([structural unit (2)]/[structural unit (1)+structural unit (2)]) It is not less than 0.1 and not more than 0.7.

[4] 如[1]或[3]之聚醯胺酸,其中前述二羧酸酐C為選自下述之化學式表示的化合物。[4] The polyamic acid according to [1] or [3], wherein the dicarboxylic anhydride C is selected from compounds represented by the following chemical formulae.

Figure 02_image005
Figure 02_image005

(式中,Rx表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基)。 [5] 如[1]至[4]中任一項之聚醯胺酸,其中以源自前述矽倍半氧烷化合物A的結構單元之2價單體作為基準的莫耳含有率:(nA/(nA+nD))×100(此處,nA係以源自前述矽倍半氧烷化合物A之結構單元的總莫耳數除以前述二羧酸酐基之總數再乘以2倍所得之數值;nD係源自前述羧酸類之結構單元的莫耳數)為0.01~10.0莫耳%。 (In the formula, Rx represents an aliphatic hydrocarbon group having 1 to 8 carbons, an alicyclic hydrocarbon group having 4 to 8 carbons, or an aromatic hydrocarbon group having 6 to 8 carbons). [5] The polyamic acid according to any one of [1] to [4], wherein the molar content is based on the divalent monomer derived from the structural unit of the silsesquioxane compound A: ( nA/(nA+nD))×100 (here, nA is obtained by dividing the total number of moles of structural units derived from the aforementioned silsesquioxane compound A by the total number of the aforementioned dicarboxylic acid anhydride groups and multiplying by 2 times The numerical value; nD is the number of moles derived from the structural units of the aforementioned carboxylic acids) is 0.01-10.0 mole%.

[6] 如[1]至[5]中任一項之聚醯胺酸,其中前述羧酸類係選自下述化學式表示的一種以上之化合物。

Figure 02_image007
[7] 如[1]至[6]中任一項之聚醯胺酸,其中前述二胺類包含4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB)或4,4’-二胺基苯甲醯胺苯(DABA)。 [6] The polyamic acid according to any one of [1] to [5], wherein the aforementioned carboxylic acid is selected from one or more compounds represented by the following chemical formulae.
Figure 02_image007
[7] The polyamic acid according to any one of [1] to [6], wherein the aforementioned diamines contain 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl (TFMB) or 4,4'-diaminobenzamidobenzene (DABA).

[8] 一種聚醯胺酸組成物,其包含如[1]至[7]中任一項之聚醯胺酸與溶劑。[8] A polyamic acid composition comprising the polyamic acid according to any one of [1] to [7] and a solvent.

[9] 一種聚醯亞胺,其係由如[1]至[7]中任一項之聚醯胺酸進行醯亞胺化而成。[9] A polyimide obtained by imidizing the polyamic acid according to any one of [1] to [7].

[10] 一種聚醯亞胺膜,其包含如[9]之聚醯亞胺。[10] A polyimide film comprising the polyimide according to [9].

[11] 如[10]之聚醯亞胺膜,其線膨脹係數為40ppm/K以下、-20ppm/K以上。[11] The polyimide film according to [10], wherein the coefficient of linear expansion is not more than 40 ppm/K and not less than -20 ppm/K.

[12] 如[10]或[11]之聚醯亞胺膜,其在拉伸試驗中的抗張積(tensile product)為1,000MPa・%以上、10,000MPa・%以下。[12] The polyimide film according to [10] or [11], wherein the tensile product (tensile product) in the tensile test is 1,000 MPa・% or more and 10,000 MPa・% or less.

[13] 一種積層體,其包含如[10]至[12]中任一項之聚醯亞胺膜與無機基板。[13] A laminate comprising the polyimide film according to any one of [10] to [12] and an inorganic substrate.

[14] 一種可撓式電子元件的製造方法,其包含: 在如[13]之積層體的聚醯亞胺膜面上形成電子元件的步驟;及 將前述無機基板剝離的步驟。 [14] A method of manufacturing a flexible electronic component, comprising: A step of forming an electronic component on the polyimide film surface of the laminate as in [13]; and A step of peeling off the aforementioned inorganic substrate.

[15]一種可撓式電子元件,其包含如[10]至[12]中任一項之聚醯亞胺膜與形成於該聚醯亞胺膜上的電子元件。 [發明之效果] [15] A flexible electronic component comprising the polyimide film according to any one of [10] to [12] and an electronic component formed on the polyimide film. [Effect of Invention]

根據本發明,可提供一種可作為用以製造維持其他主要特性的同時韌性經改善的聚醯亞胺膜之原料等的聚醯胺酸。又,可提供一種包含上述聚醯胺酸的聚醯胺酸組成物、及將該聚醯胺酸進行醯亞胺化而成的聚醯亞胺。According to the present invention, there can be provided a polyamic acid which can be used as a raw material or the like for producing a polyimide film whose toughness is improved while maintaining other main characteristics. In addition, there are provided a polyamic acid composition including the above-mentioned polyamic acid, and a polyimide obtained by imidizing the polyamic acid.

再者,根據本發明,可提供一種維持其他主要特性的同時韌性經改善的聚醯亞胺膜、其積層體、以及使用了聚醯亞胺膜的可撓式電子元件及其製造方法。Furthermore, according to the present invention, it is possible to provide a polyimide film having improved toughness while maintaining other main characteristics, a laminate thereof, a flexible electronic device using the polyimide film, and a method of manufacturing the same.

[用以實施發明的形態][Mode for Carrying Out the Invention]

以下詳細說明本發明,但此等僅為本發明的一態樣,本發明不限於此等內容。The present invention will be described in detail below, but these are only one aspect of the present invention, and the present invention is not limited to these contents.

本發明的聚醯胺酸係至少羧酸類、二胺類與具有二羧酸酐基之矽倍半氧烷化合物A的共聚合反應物。以下對於此等進行說明。The polyamic acid of the present invention is a copolymerization reaction product of at least carboxylic acids, diamines and silsesquioxane compound A having dicarboxylic acid anhydride groups. These are described below.

<具有二羧酸酐基之矽倍半氧烷化合物A> 新穎的矽倍半氧烷化合物A係具有二羧酸酐基(以下有時亦僅稱為「酸酐基」)的矽倍半氧烷化合物,其係由作為含硫醇基之矽倍半氧烷化合物的縮合物B之硫醇基與具有選自乙烯基、烯基、環烯基、炔基及醯氯基之中的至少一種反應性基的二羧酸酐C之前述反應性基反應而成的矽倍半氧烷化合物。 <Sisesquioxane compound A having a dicarboxylic anhydride group> Novel silsesquioxane compound A is a silsesquioxane compound having a dicarboxylic acid anhydride group (hereinafter sometimes simply referred to as "anhydride group"), which is composed of a thiol-containing silsesquioxane The thiol group of the condensate B of the compound reacts with the aforementioned reactive group of dicarboxylic acid anhydride C having at least one reactive group selected from vinyl, alkenyl, cycloalkenyl, alkynyl and acyl chloride groups silsesquioxane compounds.

縮合物B係下述a1與a2的縮合物B: 通式:R 1Si(OR 2) 3表示的含硫醇基之三烷氧基矽烷類a1; (式中,R 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基的至少一個氫被取代為硫醇基的有機基,R 2相互獨立地表示氫原子、碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基); 不具有硫醇基的三烷氧基矽烷類a2。 The condensate B is the condensate B of the following a1 and a2: General formula: Trialkoxysilanes a1 containing thiol groups represented by R 1 Si(OR 2 ) 3 ; (wherein, R 1 represents carbon number 1 An organic group in which at least one hydrogen of an aliphatic hydrocarbon group with ∼8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons is substituted with a thiol group, R 2 independently represent a hydrogen atom, an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons); trialkoxysilanes a2 without thiol groups.

此處,含硫醇基之三烷氧基矽烷類a1與三烷氧基矽烷類a2中皆存在3個反應性的烷氧基,因此所得之物的結構成為3維的複雜結構,故以化學式特定其整體結構並不實際。因此以製法限定(product by process)的形式來特定物之發明。Here, there are 3 reactive alkoxy groups in the thiol-containing trialkoxysilanes a1 and trialkoxysilanes a2, so the structure of the obtained product becomes a three-dimensional complex structure, so It is not practical for a chemical formula to specify its overall structure. Therefore, the invention of specific objects is defined in the form of product by process.

然而,作為2個重複單元,可部分地特定出結構。亦即,新穎的矽倍半氧烷化合物A較佳係具有下述通式(1)及(2)表示的結構單元。However, the structure can be partially specified as two repeating units. That is, the novel silsesquioxane compound A preferably has structural units represented by the following general formulas (1) and (2).

Figure 02_image009
Figure 02_image009

(式中,Q 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基,Q 2為單鍵、碳數1~8的烴基、碳數1~8的烴基中的一個以上之碳原子被氧所取代的有機基或羰基,X為碳-碳鍵或是碳數4~10的脂肪族環、碳數6~10的芳香族環或構成此等之碳的一部分被氧或硫所取代的雜環;與此等鍵結之氫的一個以上亦可被烴基所取代;1.0≤m≤2.0;1.4≤n≤1.6)。

Figure 02_image011
(wherein, Q 1 represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons, Q 2 is a single bond, an aliphatic hydrocarbon with 1 to 8 carbons Hydrocarbon group, organic group or carbonyl group in which one or more carbon atoms in the hydrocarbon group with 1 to 8 carbon atoms is replaced by oxygen, X is a carbon-carbon bond or an aliphatic ring with 4 to 10 carbon atoms, and an organic group with 6 to 10 carbon atoms Aromatic rings or heterocyclic rings in which part of the carbon constituting them is substituted by oxygen or sulfur; one or more hydrogens bonded to these rings may also be substituted by hydrocarbon groups; 1.0≤m≤2.0; 1.4≤n≤1.6) .
Figure 02_image011

(式中,Q 3表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基;1.4≤n≤1.6)。 另一態樣中,新穎的矽倍半氧烷化合物A不限於以上述製法限定所進行的物之特定,亦可特定為具有下述通式(1)及(2)表示之結構單元作為2個重複單元者。 (wherein, Q represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons; 1.4≤n≤1.6). In another aspect, the novel silsesquioxane compound A is not limited to the specificity of the substance carried out by the above-mentioned preparation method, and can also be specified as having the structural units represented by the following general formulas (1) and (2) as 2 repeating unit.

新穎的矽倍半氧烷化合物A,例如可較佳地依序包含下述步驟的製造方法製造。The novel silsesquioxane compound A, for example, can preferably be produced by a production method sequentially comprising the following steps.

第1步驟,使用酸性觸媒使下述a1、a2與水進行水解反應而得到反應混合物x: 通式:R 1Si(OR 2) 3表示的含硫醇基之三烷氧基矽烷類a1(式中,R 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基的至少一個氫被取代為硫醇基的有機基;R 2相互獨立地表示氫原子、碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基); 不具有硫醇基的三烷氧基矽烷類a2; 第2步驟,從前述反應混合物x去除前述酸性觸媒,得到反應混合物y; 第3步驟,將包含鹼性觸媒的極性溶劑與前述反應混合物y混合並使其縮合,藉此得到具有硫醇基之縮合物B;及 第4步驟,使前述縮合物B與具有選自乙烯基、烯基、環烯基、炔基及醯氯基之中的至少一種反應性基的二羧酸酐C反應。 In the first step, use an acidic catalyst to hydrolyze the following a1, a2 with water to obtain a reaction mixture x: General formula: thiol group-containing trialkoxysilanes represented by R 1 Si(OR 2 ) 3 a1 (wherein, R represents an organic group in which at least one hydrogen of an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons is replaced by a thiol group ; R independently represent a hydrogen atom, an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons or an aromatic hydrocarbon group with 6 to 8 carbons); Oxygen silanes a2; Step 2, removing the aforementioned acidic catalyst from the aforementioned reaction mixture x to obtain a reaction mixture y; Step 3, mixing a polar solvent containing an alkaline catalyst with the aforementioned reaction mixture y and condensing it, In this way, a condensate B with a thiol group is obtained; and the fourth step is to make the aforementioned condensate B and a reactive group having at least one reactive group selected from vinyl, alkenyl, cycloalkenyl, alkynyl, and acyl chloride. The dicarboxylic anhydride C reaction.

又,亦可藉由使市售的含硫醇基之矽倍半氧烷化合物(縮合物B)與具有選自乙烯基、烯基、環烯基、炔基及醯氯基之中的至少一種反應性基的二羧酸酐C反應而獲得。In addition, it can also be obtained by combining a commercially available thiol group-containing silsesquioxane compound (condensate B) with at least A reactive group of dicarboxylic acid anhydride C is obtained by the reaction.

<縮合物B(含硫醇基之矽倍半氧烷化合物)> 縮合物B係含硫醇基之三烷氧基矽烷類a1與不具有硫醇基的三烷氧基矽烷類a2的縮合物。作為縮合物B,例如可使用有機/無機混成樹脂Compoceran SQ(商品名稱:SQ107或SQ109,荒川化學工業股份有限公司)。或可使用以包含上述第1步驟~第3步驟的方法所合成的縮合物B。 <Condensate B (thiol group-containing silsesquioxane compound)> Condensate B is a condensate of trialkoxysilanes a1 containing thiol groups and trialkoxysilanes a2 without thiol groups. As the condensate B, for example, organic/inorganic hybrid resin Compoceran SQ (trade name: SQ107 or SQ109, Arakawa Chemical Co., Ltd.) can be used. Alternatively, the condensate B synthesized by the method including the above-mentioned first step to third step can be used.

<第1步驟> 第1步驟係使用酸性觸媒使通式:R 1Si(OR 2) 3表示的含硫醇基之三烷氧基矽烷類a1、不具有硫醇基的三烷氧基矽烷類a2與水進行水解反應而得到反應混合物x的步驟。 <The first step> The first step is to use an acidic catalyst to make the general formula: R 1 Si(OR 2 ) 3 containing trialkoxysilanes a1 containing thiol groups, trialkoxysilanes without thiol groups A step in which silanes a2 are hydrolyzed with water to obtain a reaction mixture x.

(式中,R 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基的至少一個氫被取代為硫醇基的有機基;R 2相互獨立地表示氫原子、碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基)。 此處,「碳數1~8」等的碳數之限定係表示含取代基之有機基整體的碳數。 更詳細而言,上述通式中,R 1表示具有直鏈、或分支鏈或是脂肪族環的碳數1~8之烴基、或是亦可具有烴基的碳數6~8之芳香族烴基的至少一個氫被取代為硫醇基的有機基。作為R 1,從可賦予高分子鏈柔軟性的觀點來看,較佳為直鏈烴基,從提高耐熱性的觀點來看,較佳為脂環式烴基或芳香族烴基。 (wherein, R represents an organic group in which at least one hydrogen of an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons is replaced by a thiol group ; R 2 independently represent a hydrogen atom, an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons or an aromatic hydrocarbon group with 6 to 8 carbons). Here, the limitation of the carbon number such as "carbon number 1 to 8" means the carbon number of the whole organic group containing a substituent. More specifically, in the above general formula, R 1 represents a hydrocarbon group with 1 to 8 carbons having a straight chain, branched chain or aliphatic ring, or an aromatic hydrocarbon group with 6 to 8 carbons that may also have a hydrocarbon group An organic group in which at least one hydrogen is replaced by a thiol group. R 1 is preferably a linear hydrocarbon group from the viewpoint of imparting flexibility to the polymer chain, and is preferably an alicyclic hydrocarbon group or an aromatic hydrocarbon group from the viewpoint of improving heat resistance.

R 2相互獨立地表示氫原子、具有直鏈、或分支鏈或是脂肪族環的碳數1~8之烴基、或是亦可具有烴基的碳數6~8之芳香族烴基。作為R 2,從水解反應之反應性的觀點來看,較佳為碳數1~4的烷基。特佳為甲基或乙基。 R 2 each independently represent a hydrogen atom, a hydrocarbon group having 1 to 8 carbons having a straight chain, a branched chain or an alicyclic ring, or an aromatic hydrocarbon group having 6 to 8 carbons which may also have a hydrocarbon group. R 2 is preferably an alkyl group having 1 to 4 carbons from the viewpoint of reactivity in hydrolysis reaction. Particularly preferred is methyl or ethyl.

作為含硫醇基之三烷氧基矽烷類a1(以下稱為成分(a1))的具體例,可列舉:3-巰基丙基三甲氧基矽烷、3-巰基丙基三乙氧基矽烷、3-巰基丙基三丙氧基矽烷、3-巰基丙基三丁氧基矽烷、1,4-二巰基-2-(三甲氧基矽基)丁烷、1,4-二巰基-2-(三乙氧基矽基)丁烷、1,4-二巰基-2-(三丙氧基矽基)丁烷、1,4-二巰基-2-(三丁氧基矽基)丁烷、2-巰基甲基-3-巰基丙基三甲氧基矽烷、2-巰基甲基-3-巰基丙基三乙氧基矽烷、2-巰基甲基-3-巰基丙基三丙氧基矽烷、2-巰基甲基-3-巰基丙基三丁氧基矽烷、1,2-二巰基乙基三甲氧基矽烷、1,2-二巰基乙基三乙氧基矽烷、1,2-二巰基乙基三丙氧基矽烷、1,2-二巰基乙基三丁氧基矽烷等,該例示化合物可單獨使用任一者,或適當組合使用。該例示化合物之中,3-巰基丙基三甲氧基矽烷因為水解反應的反應性高且容易取得而特佳。Specific examples of thiol group-containing trialkoxysilanes a1 (hereinafter referred to as component (a1)) include 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-Mercaptopropyltripropoxysilane, 3-Mercaptopropyltributoxysilane, 1,4-Dimercapto-2-(trimethoxysilyl)butane, 1,4-Dimercapto-2- (Triethoxysilyl)butane, 1,4-Dimercapto-2-(tripropoxysilyl)butane, 1,4-Dimercapto-2-(tributoxysilyl)butane , 2-mercaptomethyl-3-mercaptopropyltrimethoxysilane, 2-mercaptomethyl-3-mercaptopropyltriethoxysilane, 2-mercaptomethyl-3-mercaptopropyltripropoxysilane , 2-mercaptomethyl-3-mercaptopropyltributoxysilane, 1,2-dimercaptoethyltrimethoxysilane, 1,2-dimercaptoethyltriethoxysilane, 1,2-di Mercaptoethyltripropoxysilane, 1,2-dimercaptoethyltributoxysilane, etc., these exemplified compounds may be used alone or in appropriate combination. Among these exemplified compounds, 3-mercaptopropyltrimethoxysilane is particularly preferable because of its high reactivity in the hydrolysis reaction and its easy availability.

作為不具有硫醇基的三烷氧基矽烷類a2(以下稱為成分(a2)),可列舉通式:R 3Si(OR 2) 3表示的化合物。(式中,R 3表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基;R 2相互獨立地表示氫原子、碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基)。 更詳細而言,R 3表示具有直鏈、或分支鏈或是脂肪族環的碳數1~8的烴基、或是亦可聚有烴基的碳數6~8之芳香族烴基。R 2如同針對成分(a1)所說明之內容,但可與成分(a1)中的R 2相同亦可不同。 Examples of trialkoxysilanes a2 (hereinafter referred to as component (a2)) not having a thiol group include compounds represented by the general formula: R 3 Si(OR 2 ) 3 . (wherein, R 3 represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons; R 2 independently represents a hydrogen atom, a carbon number 1 ~8 aliphatic hydrocarbon group, carbon number 4~8 alicyclic hydrocarbon group or carbon number 6~8 aromatic hydrocarbon group). More specifically, R 3 represents a hydrocarbon group having 1 to 8 carbons having a straight chain, a branched chain, or an aliphatic ring, or an aromatic hydrocarbon group having 6 to 8 carbons that may be polymerized with a hydrocarbon group. R 2 is the same as that described for the component (a1), but may be the same as or different from R 2 in the component (a1).

作為成分(a2)的具體例,可使用甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷等。成分(a2)可單獨使用任一者,或將2種以上組合使用。藉由使用此等,可調整硫醇基的量,故可調整最終所得之聚醯亞胺的交聯度,或是提高聚醯亞胺中的無機成分之比例。As specific examples of component (a2), methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, phenyltrimethoxysilane, phenyl Triethoxysilane, etc. Component (a2) may be used individually or in combination of 2 or more types. By using these, the amount of thiol groups can be adjusted, so the degree of crosslinking of the polyimide finally obtained can be adjusted, or the ratio of the inorganic component in the polyimide can be increased.

烷氧基矽烷類中的三烷氧基矽烷類a2之莫耳比([a2的莫耳數]/[a1的莫耳數+a2的莫耳數])較佳為0.1以上0.7以下,更佳為0.2以上0.7以下。此莫耳比越大,每一分子所包含的硫醇基量越少,值越小,硫醇基量越大。藉由使其在此範圍內,所得之聚醯亞胺鏈會適度交聯,關於物性的改善效果亦為充分。The molar ratio of the trialkoxysilanes a2 in the alkoxysilanes ([the number of moles of a2]/[the number of moles of a1+the number of moles of a2]) is preferably not less than 0.1 and not more than 0.7, more preferably Preferably, it is not less than 0.2 and not more than 0.7. The larger the molar ratio, the less the amount of thiol groups contained in each molecule, and the smaller the value, the greater the amount of thiol groups. By setting it in this range, the obtained polyimide chain will be moderately crosslinked, and the effect of improving physical properties will be sufficient.

作為含硫醇基之矽倍半氧烷的縮合物B,可使用成分(a1)與成分(a2)並將此等水解後使其進行縮合而獲得。第1步驟中,藉由水解反應,成分(a1)及成分(a2)所包含的烷氧基成為矽醇基,並副生成醇。The condensate B of thiol group-containing silsesquioxane can be obtained by using component (a1) and component (a2), hydrolyzing them, and then condensing them. In the first step, the alkoxy groups contained in the component (a1) and the component (a2) are converted into silanol groups by the hydrolysis reaction, and alcohol is by-produced.

水解反應所需之水的量,作為莫耳比([用於水解反應之水的莫耳數]/[成分(a1)與成分(a2)所包含的各烷氧基的總莫耳數]),較佳為0.4~10。此莫耳比在0.4以上且小於0.5的情況,所得之含硫醇基之矽倍半氧烷中會殘留部分的烷氧基,但可提升對於無機材料的密合性。又,0.5~10的情況,所得之含硫醇基之矽倍半氧烷中實質上未殘留烷氧基,容易製作厚膜硬化物。The amount of water required for the hydrolysis reaction, as a molar ratio ([the number of moles of water used for the hydrolysis reaction]/[the total number of moles of each alkoxy group contained in component (a1) and component (a2)] ), preferably 0.4 to 10. When the molar ratio is more than 0.4 and less than 0.5, some alkoxy groups will remain in the obtained thiol group-containing silsesquioxane, but the adhesion to inorganic materials can be improved. Also, in the case of 0.5 to 10, substantially no alkoxy group remains in the obtained thiol group-containing silsesquioxane, and it is easy to produce a thick-film cured product.

另外,除了成分(a1)與成分(a2)以外,在無損本發明之效果的範圍(例如50莫耳%以下)內,亦可進一步使用二烷氧基矽烷類及/或四烷氧基矽烷類。In addition, in addition to component (a1) and component (a2), dialkoxysilanes and/or tetraalkoxysilanes can be further used within the range that does not impair the effect of the present invention (for example, 50 mole % or less). kind.

作為用於水解反應的觸媒,可任意使用以往習知能發揮作為水解觸媒之功能的酸性觸媒。然而,因為在水解反應後必須實質上去除酸觸媒,故較佳為容易去除者。這樣的觸媒可列舉:因沸點低而能夠以減壓去除的甲酸、可以過濾等方法輕易去除的固態酸觸媒。As the catalyst used for the hydrolysis reaction, any conventionally known acid catalyst capable of functioning as a hydrolysis catalyst can be used arbitrarily. However, since the acid catalyst must be substantially removed after the hydrolysis reaction, it is preferably one that is easy to remove. Examples of such catalysts include formic acid that can be removed under reduced pressure due to its low boiling point, and solid acid catalysts that can be easily removed by methods such as filtration.

作為固態酸觸媒,可列舉:陽離子交換樹脂、活性白土、碳系固態酸等。其中,陽離子交換樹脂其觸媒活性高且易取得而較佳。作為陽離子交換樹脂,可使用強酸型陽離子交換樹脂、弱酸型陽離子交換樹脂。作為強酸型離子交換樹脂,可列舉:Diaion SK系列、同系列的UBK系列、同系列的PK系列、同系列的HPK25/PCP系列(皆為三菱化學股份有限公司製商品名稱)、Amberlite IR120B、同系列的IR124、同系列的200CT、同系列的252、Anberjet 1020、同系列的1024、同系列的1060、同系列的1220、Amberlyst 15DRY、同系列的15JWET、同系列的16WET、同系列的31WET、同系列的35WET(皆為奧璐佳瑙(Organo)股份有限公司製商品名稱)等;作為弱酸型離子交換樹脂,可列舉:Diaion WK系列、同系列的WK40(皆為三菱化學股份有限公司製商品名稱)、Amberlite FPC3500、同系列的IRC76(皆為奧璐佳瑙股份有限公司製商品名稱)等。可根據反應速度及副反應的抑制等而任意選擇所使用之離子交換樹脂的型態,但從反應性來看,特佳為強酸性離子交換樹脂。Examples of the solid acid catalyst include cation exchange resins, activated clay, carbon-based solid acids, and the like. Among them, cation exchange resins are preferable because they have high catalytic activity and are easy to obtain. As the cation exchange resin, strong acid type cation exchange resin and weak acid type cation exchange resin can be used. Examples of strong acid ion exchange resins include: Diaion SK series, UBK series of the same series, PK series of the same series, HPK25/PCP series of the same series (all are trade names manufactured by Mitsubishi Chemical Co., Ltd.), Amberlite IR120B, and IR124 of the same series, 200CT of the same series, 252 of the same series, Anberjet 1020, 1024 of the same series, 1060 of the same series, 1220 of the same series, Amberlyst 15DRY, 15JWET of the same series, 16WET of the same series, 31WET of the same series, 35WET of the same series (both are product names manufactured by Organo Co., Ltd.); as weak acid type ion exchange resins, Diaion WK series, WK40 of the same series (both are manufactured by Mitsubishi Chemical Co., Ltd.) product name), Amberlite FPC3500, IRC76 of the same series (all are product names manufactured by Olucano Co., Ltd.), etc. The type of ion-exchange resin used can be arbitrarily selected according to the reaction speed and suppression of side reactions, etc., but from the viewpoint of reactivity, a strongly acidic ion-exchange resin is particularly preferred.

酸觸媒的添加量,相對於成分(a1)及成分(a2)共100質量份,較佳為0.1~25質量份,更佳為1~10質量份。若為25質量份以下,則在後續步驟中容易去除,有在經濟上為有利之傾向。另一方面,若為0.1質量份以上,則可使反應適當進行而有反應時間不會過長的傾向。The addition amount of an acid catalyst is preferably 0.1-25 mass parts with respect to a total of 100 mass parts of component (a1) and component (a2), More preferably, it is 1-10 mass parts. If it is 25 parts by mass or less, it will be easy to remove in the subsequent step, and it will tend to be economically advantageous. On the other hand, when it is 0.1 mass part or more, it exists in the tendency which reaction time may not become too long, but can make reaction progress appropriately.

反應溫度、時間可因應成分(a1)及成分(a2)的反應性任意設定,通常為0~100℃左右,較佳為20~60℃,1分鐘~2小時左右。該水解反應,可在溶劑的存在下或不存在下進行,但較佳係不使用溶劑。使用溶劑的情況,溶劑的種類並無特別限定,可選擇使用一種以上的任意溶劑,但較佳係使用與後述縮合反應中所使用之溶劑相同者。The reaction temperature and time can be set arbitrarily according to the reactivity of component (a1) and component (a2), usually about 0-100°C, preferably 20-60°C, about 1 minute to 2 hours. This hydrolysis reaction can be carried out in the presence or absence of a solvent, but preferably no solvent is used. When a solvent is used, the type of the solvent is not particularly limited, and one or more optional solvents can be selected and used, but it is preferable to use the same solvent as that used in the condensation reaction described later.

<第2步驟> 第2步驟係從前述反應混合物x去除前述酸性觸媒而得到反應混合物y的步驟。亦即,第1步驟中的水解反應結束後,必須從系統內實質上去除酸觸媒。未去除的情況,在後述縮合反應中反應並未進行、矽醇基未完全消耗、由於異常高分子量化故系統凝膠化,因而無法得到目的之含硫醇基之矽倍半氧烷(縮合物B)。 Step 2> The second step is a step of obtaining the reaction mixture y by removing the acid catalyst from the reaction mixture x. That is, after the hydrolysis reaction in the first step is completed, the acid catalyst must be substantially removed from the system. If it is not removed, the reaction does not proceed in the condensation reaction described later, the silanol group is not completely consumed, and the system gels due to the abnormally high molecular weight, so the desired thiol group-containing silsesquioxane cannot be obtained (condensation object B).

去除酸性觸媒的方法,可因應所使用之觸媒適當選自習知的各種方法。例如,如前所述,在使用甲酸的情況中,藉由減壓去除固態酸觸媒的情況,可在縮合反應結束後藉由過濾等的方法輕易去除。The method for removing the acid catalyst can be appropriately selected from various known methods according to the catalyst used. For example, as described above, in the case of using formic acid, in the case of removing the solid acid catalyst by reducing pressure, it can be easily removed by filtration or the like after the condensation reaction is completed.

又,亦可在水解反應結束,從系統內去除酸觸媒後、在去除酸觸媒的同時,藉由減壓等方法去除副生成的醇及多餘的水。又,亦可在去除後以用於縮合反應的溶劑進行稀釋,而在後續縮合反應中容易添加水解反應物。In addition, after the hydrolysis reaction is completed, after the acid catalyst is removed from the system, by-product alcohol and excess water can be removed by decompression and other methods while removing the acid catalyst. Moreover, it can also dilute with the solvent used for condensation reaction after removal, and it is easy to add a hydrolysis reactant in subsequent condensation reaction.

<第3步驟> 第3步驟係將包含鹼性觸媒的極性溶劑與前述反應混合物y混合並使其縮合,藉此得到具有硫醇基之縮合物B的步驟。縮合反應中,前述矽醇基之間會副生成水,又矽醇基與烷氧基之間會副生成醇,而形成矽氧烷鍵。縮合反應中,可任意使用以往習知的能發揮作為脫水縮合觸媒之功能的鹼性觸媒。 Step 3> The third step is a step of obtaining a condensate B having a thiol group by mixing and condensing a polar solvent containing an alkaline catalyst with the aforementioned reaction mixture y. During the condensation reaction, water is by-generated between the aforementioned silanol groups, and alcohol is by-generated between the silanol groups and alkoxy groups to form siloxane bonds. In the condensation reaction, any conventionally known alkaline catalyst capable of functioning as a dehydration condensation catalyst can be used arbitrarily.

作為鹼性觸媒,較佳為鹼性高者,作為具體例,可列舉:氫氧化鈉(NaOH)、氫氧化鉀(KOH)、氫氧化鈣(Ca(OH) 2)等的鹼鹽類、1,8-二氮雜雙環[5.4.0]十一-7-烯、1,5-二氮雜雙環[4.3.0]壬-5-烯等有機胺類、氫氧化四甲銨、氫氧化四丁銨等氫氧化銨類等。該例示化合物可單獨使用任一者或適當組合使用。該例示化合物之中,氫氧化四甲銨因為觸媒活性高且容易取得而特佳。又,將此等鹼性觸媒作為水溶液使用的情況,在縮合反應的步驟中亦會進行水解反應,故需要預先僅減少鹼性觸媒所含之水量等以適當調整水解時所使用的水量。 The alkaline catalyst is preferably one with high alkalinity, and specific examples include alkali salts such as sodium hydroxide (NaOH), potassium hydroxide (KOH), and calcium hydroxide (Ca(OH) 2 ). , 1,8-diazabicyclo[5.4.0]undec-7-ene, 1,5-diazabicyclo[4.3.0]non-5-ene and other organic amines, tetramethylammonium hydroxide, Ammonium hydroxides such as tetrabutylammonium hydroxide, etc. These exemplified compounds can be used alone or in appropriate combination. Among these exemplified compounds, tetramethylammonium hydroxide is particularly preferable because it has high catalytic activity and is easy to obtain. Also, when these alkaline catalysts are used as an aqueous solution, the hydrolysis reaction will also proceed in the condensation reaction step, so it is necessary to reduce the amount of water contained in the alkaline catalyst in advance to properly adjust the amount of water used for hydrolysis. .

鹼性觸媒的添加量,相對於成分(a1)及成分(a2)共100質量份,較佳為0.01~5質量份,更佳為0.1~2質量份。若鹼性觸媒的添加量在5質量份以下,則有下述傾向:使用所得之含硫醇基之矽倍半氧烷(縮合物B)所製作的硬化物不易著色,在去除觸媒時,進行去除之步驟變得容易。另一方面,若在0.01質量份以上,則可使反應適當進行,而有反應時間不會太長的傾向。The addition amount of an alkaline catalyst is preferably 0.01-5 mass parts with respect to a total of 100 mass parts of component (a1) and component (a2), More preferably, it is 0.1-2 mass parts. If the amount of the alkaline catalyst added is less than 5 parts by mass, there is a tendency that the hardened product made by using the obtained thiol group-containing silsesquioxane (condensate B) is not easy to be colored, and it is difficult to remove the catalyst when it is removed. , the removal steps become easier. On the other hand, when it is 0.01 mass part or more, reaction can be made to progress suitably, and there exists a tendency for reaction time not to be too long.

反應溫度可因應成分(a1)及成分(a2)的反應性分別任意設定,通常為40~150℃左右,較佳為60~100℃左右。縮合反應較佳係在極性溶劑的存在下進行,從所得之矽倍半氧烷化合物A及其共聚物之醯胺酸溶液的穩定性及所得之膜的品質的觀點來看,更佳係不含甲苯等非極性溶劑。The reaction temperature can be set arbitrarily according to the reactivity of component (a1) and component (a2), and it is usually about 40-150°C, preferably about 60-100°C. The condensation reaction is preferably carried out in the presence of a polar solvent, and from the viewpoint of the stability of the amide acid solution of the obtained silsesquioxane compound A and its copolymer and the quality of the resulting film, it is more preferably not Contains non-polar solvents such as toluene.

作為極性溶劑,較佳為與水呈現相容性的極性溶劑,特佳為二醇醚類。又,二醇醚類之中,特佳為二烷基二醇醚系的溶劑。作為與水呈現相容性的二烷基二醇醚系溶劑,可列舉:乙二醇二甲醚、二乙二醇二甲醚、三乙二醇二甲醚、二乙二醇甲基乙醚、二乙二醇二乙醚等。又,亦可使用丙二醇單甲醚乙酸酯(PGMEA)、二丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯等二醇醚乙酸酯系溶劑。The polar solvent is preferably a polar solvent compatible with water, particularly preferably glycol ethers. Moreover, among glycol ethers, dialkyl glycol ether solvents are particularly preferable. Examples of dialkyl glycol ether solvents compatible with water include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, and diethylene glycol methyl ether. , Diethylene glycol diethyl ether, etc. Moreover, glycol ether acetate solvents, such as propylene glycol monomethyl ether acetate (PGMEA), dipropylene glycol monomethyl ether acetate, and propylene glycol monoethyl ether acetate, can also be used.

又,縮合反應可以下述方法進行:對於設定為反應溫度且添加了脫水縮合觸媒的極性溶劑依序添加包含由水解反應而得之水解物的溶液。添加的方法可從習知的各種方法適當選擇。添加所需之時間可因應成分(a1)及成分(a2)的反應性分別任意設定,但通常為30分鐘~12小時左右。Moreover, the condensation reaction can be performed by sequentially adding a solution containing a hydrolyzate obtained by a hydrolysis reaction to a polar solvent to which a dehydration condensation catalyst has been added at a reaction temperature. The method of adding can be appropriately selected from various known methods. The time required for the addition can be set arbitrarily according to the reactivity of the component (a1) and the component (a2), but it is usually about 30 minutes to 12 hours.

以上述方法進行縮合反應時,較佳係進行反應至未反應之矽醇基實質上消失為止。殘留未反應之矽醇基的情況,所得之含硫醇基之矽倍半氧烷(縮合物B)及包含縮合物B的組成物之保管穩定性降低或耐熱性降低,因而不佳。When the condensation reaction is carried out by the above method, it is preferable to carry out the reaction until the unreacted silanol group substantially disappears. When unreacted silanol groups remain, the obtained thiol group-containing silsesquioxane (condensate B) and the composition containing the condensate B decrease in storage stability or decrease in heat resistance, which is not preferable.

又,較佳係進行至未反應的烷氧基的總莫耳比([未反應的烷氧基的總莫耳數]/[成分(a1)及成分(a2)所包含的各烷氧基的總莫耳數])成為0.2以下,更佳係實質上為0。此莫耳比超過0且在0.2以下的情況,所得之含硫醇基之矽倍半氧烷(縮合物B)中會殘留部分烷氧基,從對於無機材料之密合性提升的觀點來看較佳。從實質上未殘留烷氧基而容易製作厚膜硬化物的觀點、以及所得之含硫醇基之矽倍半氧烷(縮合物B)中所包含的籠型結構成為最大而硬化物之耐熱性提升的觀點來看,特佳係使莫耳比為0。又非0的情況,有所得之縮合物B中所包含的無規型矽倍半氧烷的量變多、縮合物B的分子量(Mw)變大的傾向。In addition, it is preferable to proceed to the total molar ratio of unreacted alkoxy groups ([total moles of unreacted alkoxy groups]/[each alkoxy group contained in component (a1) and component (a2) The total number of moles]) is 0.2 or less, more preferably substantially 0. When the molar ratio exceeds 0 and is less than 0.2, some alkoxy groups remain in the resulting thiol group-containing silsesquioxane (condensate B), from the viewpoint of improving the adhesion to inorganic materials. Look better. From the viewpoint that no alkoxy group remains substantially, it is easy to produce a thick-film cured product, and the cage structure contained in the obtained thiol group-containing silsesquioxane (condensate B) becomes the largest, and the heat resistance of the cured product is From the point of view of sexual improvement, the molar ratio is 0 for the special series. When it is not 0, the amount of random silsesquioxane contained in the obtained condensate B tends to increase, and the molecular weight (Mw) of the condensate B tends to increase.

該縮合反應,較佳係以溶劑稀釋至成分(a1)與成分(a2)的總濃度成為2~80質量%左右之後進行,更佳為15~75質量%。若使用具有比由縮合反應而生成之水及醇的沸點更高之沸點的溶劑,則可從反應系中將該等餾去,因而較佳。該濃度為2質量%以上的情況,所得之硬化性組成物所包含的含硫醇基之矽倍半氧烷(縮合物B)成為充分的量,因而較佳。80質量%以下的情況,反應中不易凝膠化,而有生成之縮合物B的分子量適當的傾向。This condensation reaction is preferably performed after diluting with a solvent until the total concentration of the component (a1) and the component (a2) becomes about 2 to 80% by mass, more preferably 15 to 75% by mass. It is preferable to use a solvent having a boiling point higher than that of water and alcohol produced by the condensation reaction, since these can be distilled off from the reaction system. When the concentration is 2% by mass or more, the thiol group-containing silsesquioxane (condensate B) contained in the obtained curable composition becomes sufficient amount, which is preferable. In the case of 80% by mass or less, gelation is unlikely to occur during the reaction, and the molecular weight of the resulting condensate B tends to be moderate.

該縮合反應結束後,若將已使用之觸媒去除,則含硫醇基之矽倍半氧烷(縮合物B)及包含縮合物B而成的聚醯亞胺之穩定性提升,因而較佳。去除方法可因應所使用之觸媒而適當選自習知的各種方法。例如,使用了氫氧化四甲銨的情況,在縮合反應結束後,可藉由以陽離子交換樹脂吸附、去除等方法將其去除。 <第4步驟> 第4步驟係使前述縮合物B與具有選自乙烯基、烯基、環烯基、炔基及醯氯基之中的至少一種反應性基的二羧酸酐C反應的步驟。 After the condensation reaction is over, if the used catalyst is removed, the stability of the thiol-containing silsesquioxane (condensate B) and the polyimide formed from the condensate B will be improved, so it is more stable than good. The removal method can be appropriately selected from various known methods according to the catalyst used. For example, when tetramethylammonium hydroxide is used, after the condensation reaction is completed, it can be removed by methods such as adsorption and removal with a cation exchange resin. <Step 4> The fourth step is a step of reacting the aforementioned condensate B with dicarboxylic anhydride C having at least one reactive group selected from vinyl, alkenyl, cycloalkenyl, alkynyl, and acyl chloride groups.

作為二羧酸酐C(以下稱為成分(C)),係使用具有可與硫醇基反應之官能基的二羧酸酐。例如,可使用具有乙烯基、丙烯酸基、甲基丙烯酸基、烯丙基、烯基、環烯基、炔基或醯氯基的二羧酸酐。再佳可使用具有乙烯基、烯基、環烯基、炔基或醯氯基的二羧酸酐。作為二羧酸酐C,特別期望為下述結構。As the dicarboxylic anhydride C (hereinafter referred to as component (C)), a dicarboxylic anhydride having a functional group capable of reacting with a thiol group is used. For example, a dicarboxylic acid anhydride having a vinyl group, an acrylic group, a methacrylic group, an allyl group, an alkenyl group, a cycloalkenyl group, an alkynyl group or an acyl chloride group can be used. More preferably, dicarboxylic acid anhydrides having vinyl, alkenyl, cycloalkenyl, alkynyl or acyl chloride groups can be used. As the dicarboxylic anhydride C, the following structure is particularly desirable.

Figure 02_image013
此等之中,下述化合物與具有醯氯基的化合物,因為反應性高而特佳。另外,使用反應性低之二羧酸酐C的情況,僅以UV光難以使反應完全進行,因此較佳係併用氧及氯化鐵等氧化觸媒。
Figure 02_image013
Among them, the following compounds and compounds having an acid chloride group are particularly preferable because of their high reactivity. In addition, when dicarboxylic anhydride C having low reactivity is used, it is difficult to completely proceed the reaction only with UV light, so it is preferable to use an oxidation catalyst such as oxygen and ferric chloride in combination.

Figure 02_image015
又,二羧酸酐C之中,具有芳香環結構的鄰苯二甲酸酐化合物,從提高所得之聚醯亞胺的耐熱性的觀點及可抑制高溫條件下之黃變的觀點來看較佳,結構中具有脂環式結構的馬來酸酐及環己烷二甲酸酐,從可提高無色透明性的觀點來看較佳。
Figure 02_image015
Also, among the dicarboxylic anhydrides C, a phthalic anhydride compound having an aromatic ring structure is preferable from the viewpoint of improving the heat resistance of the obtained polyimide and suppressing yellowing under high temperature conditions. Maleic anhydride and cyclohexanedicarboxylic anhydride having an alicyclic structure in the structure are preferable from the viewpoint of improving colorless transparency.

就含硫醇基之矽倍半氧烷(縮合物B)與二羧酸酐C的反應而言,可利用硫醇-烯反應或是硫醇基與醯氯基之間的反應。For the reaction of silsesquioxane containing thiol group (condensate B) and dicarboxylic anhydride C, thiol-ene reaction or reaction between thiol group and chloroacyl group can be used.

已知在硫醇-烯反應的情況中,根據碳-碳雙鍵的種類以及自由基聚合起始劑的有無,反應機構有所不同。亦即,使用具有自由基聚合性低之乙烯基、烯丙基的化合物作為成分(C)的情況中,僅進行烯‐硫醇反應,縮合物B中的硫醇基與成分(C)中的碳-碳雙鍵幾乎是以1:1(莫耳比)反應而較佳。另一方面,使用具有自由基聚合性高之丙烯酸基、甲基丙烯酸基的化合物作為成分(C)的情況中,併用自由基聚合起始劑的情況,尤其是成分(C)中的碳-碳雙鍵之聚合反應亦一併進行,縮合物B中的硫醇基與成分(C)中的碳-碳雙鍵以1:1~100(莫耳比)左右反應,故可能無法充分得到發明效果。從上述的觀點來看,使用具有自由基聚合性低之乙烯基、烯丙基的成分(C)的情況中,較佳係以莫耳比([縮合物B所包含的硫醇基的莫耳數]/[成分(C)所包含的碳-碳雙鍵的莫耳數])成為0.9~2.5的方式進行摻合,更佳為1.0。此莫耳比為0.9以上的情況,在紫外線硬化後不易殘留碳-碳雙鍵,有耐候性提升的傾向。又,2.5以下的情況,硬化物的交聯密度充分,有提升耐熱性的傾向。It is known that in the case of a thiol-ene reaction, the reaction mechanism differs depending on the kind of carbon-carbon double bond and the presence or absence of a radical polymerization initiator. That is, when a compound having a vinyl group or an allyl group with low radical polymerizability is used as the component (C), only the ene-thiol reaction proceeds, and the thiol group in the condensate B is combined with the thiol group in the component (C) The carbon-carbon double bond of the carbon-carbon double bond is almost 1:1 (mole ratio) reaction and preferably. On the other hand, when a compound having an acrylic group or a methacrylic group having high radical polymerizability is used as the component (C), when a radical polymerization initiator is used in combination, especially the carbon in the component (C)- The polymerization reaction of the carbon double bond also proceeds at the same time, and the thiol group in the condensate B reacts with the carbon-carbon double bond in the component (C) at a ratio of about 1:1 to 100 (molar ratio), so it may not be possible to obtain sufficient Invention effect. From the above-mentioned viewpoint, in the case of using a component (C) having a vinyl group or an allyl group having low radical polymerizability, it is preferable to use a molar ratio ([mole of the thiol group contained in the condensate B The number of moles]/[the number of moles of carbon-carbon double bonds contained in the component (C)) is blended so that it becomes 0.9 to 2.5, more preferably 1.0. When the molar ratio is 0.9 or more, the carbon-carbon double bond is less likely to remain after ultraviolet curing, and the weather resistance tends to be improved. Also, when it is 2.5 or less, the crosslink density of the cured product is sufficient, and the heat resistance tends to be improved.

作為硫醇-烯反應的起始劑,可使用紫外光源或有機材料、無機材料、氧。作為紫外光源,例如可使用高壓汞燈、鹵素燈、氙氣燈或紫外LED。As an initiator of the thiol-ene reaction, an ultraviolet light source or an organic material, an inorganic material, or oxygen can be used. As a UV light source, for example, high-pressure mercury lamps, halogen lamps, xenon lamps or UV LEDs can be used.

作為可使用之起始劑,並無特別限定,可任意選擇以往習知的光陽離子起始劑、光自由基起始劑、氧化劑等。作為光陽離子起始劑,可列舉:屬於因照射紫外線而產生酸之化合物的鋶鹽、碘鎓鹽、茂金屬化合物、苯偶姻甲苯磺酸酯(benzoin tosylate)等,作為此等的市售產品,例如具有CYRACURE UVI-6970、同系列的UVI-6974、同系列的UVI-6990(皆為美國Union Carbide公司製商品名稱)、Irgacure 264(BASF公司製)、CIT-1682(日本曹達股份有限公司製)等。光陽離子聚合起始劑的使用量,相對於該組成物100質量份,通常為10質量份左右以下,較佳為1~5質量份。The usable initiator is not particularly limited, and conventionally known photocation initiators, photoradical initiators, and oxidizing agents can be arbitrarily selected. As photocation initiators, there may be mentioned: perzium salts, iodonium salts, metallocene compounds, benzoin tosylate, etc., which are compounds that generate acids due to irradiation with ultraviolet light, and are commercially available as such Products, such as CYRACURE UVI-6970, UVI-6974 of the same series, UVI-6990 of the same series (all are trade names made by Union Carbide Company of the United States), Irgacure 264 (manufactured by BASF Corporation), CIT-1682 (Nippon Soda Co., Ltd. company), etc. The usage-amount of a photocationic polymerization initiator is normally about 10 mass parts or less with respect to 100 mass parts of this composition, Preferably it is 1-5 mass parts.

作為光自由基起始劑,可列舉:Darocur 1173、Irgacure 651、Irgacure 184、Irgacure 907(皆為BASF公司製商品名稱)、二苯基酮等,其相對於該組成物100質量份為5質量份左右以下,較佳為0.1~2質量份。又,藉由添加氧化鐵或氯化鐵等氧化劑可促進反應。然而,要求高耐熱性、透明性的基材膜用途中,期望不使用光反應起始劑或光敏劑而是使用紫外光源或氧使其反應。Examples of photoradical initiators include: Darocur 1173, Irgacure 651, Irgacure 184, Irgacure 907 (all of which are trade names manufactured by BASF Corporation), diphenyl ketone, etc., which are 5 parts by mass relative to 100 parts by mass of the composition About part or less, Preferably it is 0.1-2 mass parts. Also, the reaction can be accelerated by adding an oxidizing agent such as iron oxide or iron chloride. However, in applications requiring high heat resistance and transparency for substrate films, it is desirable to react using an ultraviolet light source or oxygen without using a photoreaction initiator or a photosensitizer.

硫醇基與醯氯基之間的反應的情況,較佳係添加具有與矽倍半氧烷(縮合物B)的硫醇基量及矽醇基量的和相等之當量以上的醯氯基的二羧酸酐。若具有醯氯基的二羧酸酐之添加量少,則副生成的鹽酸成為觸媒,矽醇基彼此會發生縮合,故有容易凝膠化的傾向,如果是二羧酸酐的添加量多的話,則會容易減少此弊病。另外,此情況中,未反應的醯氯基有時會與聚醯胺酸共聚合而生成聚醯胺醯亞胺。In the case of a reaction between a thiol group and an acyl chloride group, it is preferable to add an acyl chloride group having an equivalent or more equivalent to the sum of the thiol group amount and the silanol group amount of the silsesquioxane (condensate B). of dicarboxylic anhydrides. If the amount of dicarboxylic acid anhydride with amide chloride group added is small, the by-generated hydrochloric acid will act as a catalyst, and the silanol groups will condense with each other, so there is a tendency to gel easily. If the amount of dicarboxylic anhydride added is large , it will easily reduce this disadvantage. In addition, in this case, unreacted amide chloride groups may be copolymerized with polyamic acid to produce polyamidoimide.

又,硫醇基與醯氯基之間的反應的情況,會產生鹽酸作為副生成物,故亦可添加鹼作為pH調整劑。作為鹼,可使用有機鹼、三級胺及無機鹼。有機鹼的例子,可列舉:N,N-二甲基乙醯胺、N,N-二乙基乙醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N-甲基-2-吡咯啶酮、1,3-二甲基-2-咪唑啶酮、咪唑、N-甲基己內醯胺、咪唑、N,N-二甲基苯胺及N,N-二乙基苯胺。三級胺的例子,可列舉:吡啶、柯林鹼、二甲吡啶及三乙胺。無機鹼的例子,可列舉:氫氧化鉀、氫氧化鈉、碳酸鉀、碳酸鈉、碳酸氫鉀及碳酸氫鈉。然而,要求高耐熱性、透明性的基材膜用途中,期望使用揮發性的鹼使其反應。藉由添加鹼或將溶液加熱來去除鹽酸,可抑制因矽倍半氧烷的過剩反應所造成的凝膠化。In addition, in the case of the reaction between the thiol group and the chloroacyl group, hydrochloric acid is generated as a by-product, so a base may be added as a pH adjuster. As the base, organic bases, tertiary amines, and inorganic bases can be used. Examples of organic bases include: N,N-dimethylacetamide, N,N-diethylacetamide, N,N-dimethylformamide, N,N-diethylformamide Amine, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, imidazole, N-methylcaprolactam, imidazole, N,N-dimethylaniline and N , N-diethylaniline. Examples of tertiary amines include pyridine, colin's base, lutidine and triethylamine. Examples of inorganic bases include potassium hydroxide, sodium hydroxide, potassium carbonate, sodium carbonate, potassium bicarbonate, and sodium bicarbonate. However, it is desirable to react using a volatile base for base film applications requiring high heat resistance and transparency. By adding alkali or heating the solution to remove hydrochloric acid, gelation caused by excessive reaction of silsesquioxane can be suppressed.

作為反應中使用的溶劑,可列舉如下。苯、甲苯、二甲苯、均三甲苯、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、N,N-二甲基乙醯胺、N,N-二乙基乙醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N-甲基-2-吡咯啶酮、1,3-二甲基-2-咪唑啶酮、咪唑、N-甲基己內醯胺、二甲基亞碸、二乙基亞碸、二甲基碸、二乙基碸、六甲基磺醯胺、甲酚、苯酚、二甲苯酚、二乙二醇二甲醚(二甘醇二甲醚)、三乙二醇二甲醚(三甘醇二甲醚)、四甘醇二甲醚、丙二醇單甲醚乙酸酯(PGMEA)、二㗁烷、四氫呋喃及γ-丁內酯。亦可將此等的至少2個混合使用。尤其若考量生產性及膜的光學特性,作為有機溶劑的主成分,較佳係使用N,N-二甲基乙醯胺或N-甲基-2-吡咯啶酮或γ-丁內酯。又,在聚醯亞胺系樹脂或其前驅物不會析出的程度之內,亦可與此等的有機溶劑一併使用甲苯、二甲苯等不良溶劑。As a solvent used for reaction, the following are mentioned. Benzene, toluene, xylene, mesitylene, pentane, hexane, heptane, octane, nonane, decane, N,N-dimethylacetamide, N,N-diethylacetamide , N,N-dimethylformamide, N,N-diethylformamide, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidone, imidazole, N-methyl caprolactam, dimethyl sulfide, diethyl sulfide, dimethyl sulfide, diethyl sulfide, hexamethyl sulfonamide, cresol, phenol, xylenol, diethylene glycol Alcohol dimethyl ether (diglyme), triethylene glycol dimethyl ether (triglyme), tetraglyme, propylene glycol monomethyl ether acetate (PGMEA), dioxane , tetrahydrofuran and γ-butyrolactone. At least two of these can also be used in combination. In particular, in consideration of productivity and optical characteristics of the film, it is preferable to use N,N-dimethylacetamide, N-methyl-2-pyrrolidone, or γ-butyrolactone as the main component of the organic solvent. In addition, a poor solvent such as toluene or xylene may be used together with these organic solvents to the extent that the polyimide-based resin or its precursor does not precipitate.

第4步驟中所得之具有酸酐基之矽倍半氧烷化合物A,可將反應後的溶液直接使用,但亦可將異物、膠狀物過濾或是將溶劑餾除以作為粉末使用。The silsesquioxane compound A having an acid anhydride group obtained in the fourth step can be used directly as a solution after the reaction, but can also be used as a powder by filtering foreign matter or jelly or distilling off the solvent.

<具有酸酐基之矽倍半氧烷化合物A的結構> 可以上述方式獲得的矽倍半氧烷化合物A,較佳係具有下述通式(1)及(2)表示的結構單元,更佳係僅具有通式(1)及(2)表示的結構單元。 <Structure of silsesquioxane compound A having an acid anhydride group> The silsesquioxane compound A that can be obtained in the above manner preferably has the structural units represented by the following general formulas (1) and (2), more preferably only has the structures represented by the general formulas (1) and (2) unit.

Figure 02_image017
Figure 02_image017

(式中,Q 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基;Q 2為單鍵、碳數1~8的烴基、碳數1~8的烴基中的一個以上之碳原子被氧所取代的有機基或羰基,X為碳-碳鍵、或是碳數4~10的脂肪族環、碳數6~10的芳香族環或構成此等之碳的一部分被氧或硫所取代的雜環;與此等鍵結之氫的一個以上亦可被烴基所取代;1.0≤m≤2.0;1.4≤n≤1.6)。

Figure 02_image019
(wherein, Q 1 represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons; Q 2 is a single bond, a carbon number 1 to 8 Hydrocarbon group, organic group or carbonyl group in which one or more carbon atoms in the hydrocarbon group with 1 to 8 carbon atoms are replaced by oxygen, X is a carbon-carbon bond, or an aliphatic ring with 4 to 10 carbon atoms, and with 6 to 10 carbon atoms Aromatic rings or heterocyclic rings in which part of the carbon constituting them is substituted by oxygen or sulfur; more than one hydrogen bonded to these can also be substituted by hydrocarbon groups; 1.0≤m≤2.0; 1.4≤n≤1.6 ).
Figure 02_image019

(式中,Q 3表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基;1.4≤n≤1.6)。 更詳細而言,通式(1)中的Q 1表示具有直鏈、或分支鏈或是脂肪族環的碳數1~8的烴基或亦可具有烴基的碳數6~8的芳香族烴基。作為Q 1,從可賦予高分子鏈柔軟性的觀點來看,較佳為直鏈烴基,從提高耐熱性的觀點來看,較佳為脂環式烴基或芳香族烴基。 (wherein, Q represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons; 1.4≤n≤1.6). More specifically, Q in the general formula (1) represents a hydrocarbon group having 1 to 8 carbons having a straight chain, a branched chain, or an aliphatic ring, or an aromatic hydrocarbon group having 6 to 8 carbons that may also have a hydrocarbon group . As Q 1 , a linear hydrocarbon group is preferable from the viewpoint of imparting flexibility to the polymer chain, and an alicyclic hydrocarbon group or an aromatic hydrocarbon group is preferable from the viewpoint of improving heat resistance.

作為Q 1的具體例,可列舉:例示為含硫醇基之三烷氧基矽烷類a1的化合物之Si原子與S原子所鍵結的烴基或芳香族烴基。 As a specific example of Q1 , a hydrocarbon group or an aromatic hydrocarbon group to which a Si atom and an S atom of the compound of the thiol group-containing trialkoxysilanes a1 are exemplified are bonded.

Q 2為具有單鍵、直鏈或分支鏈的碳數1~8的烴基、其碳原子的一個以上被氧所取代的含氧烴基或羰基。作為Q 2,從可賦予高分子鏈柔軟性的觀點來看,較佳為直鏈烴基,從提高耐熱性的觀點來看,較佳為單鍵或脂環式烴基、芳香族烴基。 Q2 is a single bond, linear or branched hydrocarbon group having 1 to 8 carbon atoms, an oxygen-containing hydrocarbon group or carbonyl group in which one or more carbon atoms are substituted with oxygen. As Q 2 , a linear hydrocarbon group is preferable from the viewpoint of imparting flexibility to the polymer chain, and a single bond, alicyclic hydrocarbon group, or aromatic hydrocarbon group is preferable from the viewpoint of improving heat resistance.

X為碳-碳鍵、或是碳數4~10的脂肪族環、碳數6~10的芳香族環或構成此等之碳的一部分被氧或硫所取代的雜環;與此等鍵結之氫的一個以上亦可被烴基所取代。作為X,從可賦予高分子鏈柔軟性的觀點來看,較佳為碳-碳鍵,從提高耐熱性的觀點來看,較佳為單鍵、脂環式烴基、芳香族烴基。尤其是X為芳香族烴基的情況,從耐熱性變高的同時可抑制高溫條件下的變色的觀點來看較佳。X is a carbon-carbon bond, or an aliphatic ring with 4 to 10 carbons, an aromatic ring with 6 to 10 carbons, or a heterocyclic ring in which some of the carbons constituting these are substituted by oxygen or sulfur; One or more hydrogens of the junction may be substituted by hydrocarbon groups. X is preferably a carbon-carbon bond from the viewpoint of imparting flexibility to the polymer chain, and a single bond, an alicyclic hydrocarbon group, or an aromatic hydrocarbon group from the viewpoint of improving heat resistance. In particular, the case where X is an aromatic hydrocarbon group is preferable from the viewpoint of suppressing discoloration under high-temperature conditions while increasing heat resistance.

作為Q 2及X的具體例,可列舉:例示為二羧酸酐C的化合物的反應殘基之中,將二羧酸酐基去除後的部分。另外,X為構成脂肪族環或芳香族環之碳的一部分被氧或硫所取代的雜環時的例子表示為下述化學式。

Figure 02_image021
Specific examples of Q 2 and X include, among the reaction residues of the compound exemplified as dicarboxylic anhydride C, the portion from which the dicarboxylic anhydride group has been removed. In addition, an example in which X is a heterocyclic ring in which a part of carbon constituting an aliphatic ring or an aromatic ring is substituted with oxygen or sulfur is represented by the following chemical formula.
Figure 02_image021

關於m,係1.0≤m≤2.0,從立體障礙小而二羧酸酐基的反應性提高的觀點來看,m較佳為1。m為1.0<m<2.0(亦即整數以外)的情況,作為成分(a1),係併用具有1個硫醇基者與具有2個硫醇基者。Regarding m, it satisfies 1.0≤m≤2.0, and m is preferably 1 from the viewpoint of small steric hindrance and improved reactivity of dicarboxylic anhydride groups. When m is 1.0<m<2.0 (that is, other than an integer), as the component (a1), one having one thiol group and one having two thiol groups are used in combination.

關於n,係1.4≤n≤1.6,從形成更均勻的3維結構的觀點來看,n較佳為1.5。假設n為1.5以外的情況,其意思是原料中不僅有三烷氧基矽烷,亦容許少量地混入二烷氧基矽烷及四烷氧基矽烷。Regarding n, it is 1.4≦n≦1.6, and n is preferably 1.5 from the viewpoint of forming a more uniform three-dimensional structure. Assuming that n is other than 1.5, it means that not only trialkoxysilane but also dialkoxysilane and tetraalkoxysilane are allowed to be mixed in a small amount in the raw material.

又,通式(2)中的Q 3表示具有直鏈、或分支鏈、或是脂肪族環的碳數1~8的烴基或亦可具有烴基的碳數6~8的芳香族烴基。作為Q 3,從抑制結晶化、提升耐熱性的觀點來看,較佳為短鏈及分支鏈烴基或芳香族烴基。作為Q 3的具體例,可列舉:例示為三烷氧基矽烷類a2的化合物之Si原子上所鍵結之烴基或芳香族烴基。 Also, Q3 in the general formula (2) represents a hydrocarbon group having 1 to 8 carbons having a straight chain, a branched chain, or an aliphatic ring, or an aromatic hydrocarbon group having 6 to 8 carbons which may also have a hydrocarbon group. Q 3 is preferably a short-chain or branched-chain hydrocarbon group or an aromatic hydrocarbon group from the viewpoint of suppressing crystallization and improving heat resistance. Specific examples of Q3 include a hydrocarbon group or an aromatic hydrocarbon group bonded to the Si atom of the compound exemplified by trialkoxysilanes a2.

具有通式(1)及(2)表示之結構單元的矽倍半氧烷化合物A中,通式(2)表示的結構單元之莫耳比([結構單元(2)]/[結構單元(1)+結構單元(2)])較佳為0.1以上0.7以下,更佳為0.2以上0.7以下。此莫耳比越大,每一分子所包含的硫醚基或硫酯基量越少,值越小則硫醚基或硫酯基量越大。藉由使其在此範圍內,所得之聚醯亞胺鏈會適度交聯,故物性的改善效果亦為充分。In the silsesquioxane compound A having the structural unit represented by general formula (1) and (2), the molar ratio of the structural unit represented by general formula (2) ([structural unit (2)]/[structural unit ( 1) + structural unit (2)]) is preferably from 0.1 to 0.7, more preferably from 0.2 to 0.7. The larger the molar ratio, the smaller the amount of thioether or thioester groups contained in each molecule, and the smaller the value, the greater the amount of thioether or thioester groups. By setting it in this range, the obtained polyimide chain will be moderately crosslinked, and therefore the improvement effect of a physical property is also sufficient.

矽倍半氧烷化合物A每一分子中的酸酐基數(官能基數)較佳為2~10,更佳為2.5~6。若官能基數在此範圍內,則所得之聚醯亞胺鏈會適度交聯,故物性的改善效果亦為充分。The number of acid anhydride groups (functional groups) per molecule of the silsesquioxane compound A is preferably 2-10, more preferably 2.5-6. If the number of functional groups is within this range, the obtained polyimide chains will be moderately cross-linked, so the effect of improving physical properties is sufficient.

矽倍半氧烷化合物A的分子量較佳為400~5000,更佳為600~3000。若分子量在此範圍內,則所得之聚醯亞胺不易發生不均勻化,容易得到均勻的交聯結構。The molecular weight of the silsesquioxane compound A is preferably from 400 to 5,000, more preferably from 600 to 3,000. If the molecular weight is within this range, the obtained polyimide is less likely to be uneven, and a uniform cross-linked structure can be easily obtained.

通式(1)及(2)雖容易得到無規鍵結者,但藉由兩者規則鍵結,可形成籠型(包含雙層型)或部分開放之籠型、梯型的矽倍半氧烷化合物。Although general formulas (1) and (2) are easy to obtain random bonds, they can form cage-type (including double-layer type) or partially open cage-type and ladder-type silicon sesquidoles through regular bonding between the two. Oxygen compounds.

作為得到這種結構之矽倍半氧烷化合物A的方法,可列舉:在縮合物B(含硫醇基之矽倍半氧烷化合物)的階段,預先得到籠型或部分開放之籠型、梯型的矽倍半氧烷化合物的方法、或是使用具有這種結構的市售含硫醇基之矽倍半氧烷化合物的方法。As a method for obtaining the silsesquioxane compound A with such a structure, it is possible to obtain a cage type or a partially open cage type in advance at the stage of the condensate B (thiol group-containing silsesquioxane compound), A method using a ladder-type silsesquioxane compound, or a method using a commercially available thiol group-containing silsesquioxane compound having such a structure.

縮合物B可藉由二烷基矽烷二醇的脫水縮合或二烷基矽烷二醇與二烷基二氯矽烷的脫氯化氫反應而合成。藉由調整所使用之觸媒、溶劑或基質濃度,可提高特定結構的生成比例。藉由再結晶、溶劑清洗及管柱分離等方法將所得之生成物精製,可分離出特定結構。方法並無特別限定,例如可採用下述文獻等之中記載的方法:總說文獻((1)「聚矽氧廣泛應用領域與技術動向」,小野義昭著,化學工業日報公司;(2)「矽的科學」,松本信雄著,電子資訊通信學會;(3)「聚矽氧的最新應用技術」,熊田誠、和田正監修,CMC出版;(4)「矽化合物的選定與最佳利用技術」,技術資訊協會編;(5)「21世紀的有機矽科學」,玉尾皓平監修,CMC出版;(6)「矽倍半氧烷材料的化學與應用展開」,伊藤真樹監修,CMC出版)。屬於籠型結構之一種的T H 8,可藉由例如在氯化鐵存在下使三氯矽烷水解來合成(Bull. Chem. Soc. Jpn., 73, 215(2000))。以T H 8作為起始物質,進一步對其實施化學修飾,藉此可合成各種衍生物。例如,藉由T H 8的氫矽基化導入有機基的情況,在鉑觸媒的存在下,藉由使烯基化合物反應而導入有機基。若使T H 8與氯反應,得到T Cl 8,若進一步使原甲酸甲酯(methyl orthoformate)反應,則可導入甲氧基。屬於雙層結構的T Ph 4T Ph 3(ONa) 3,若在氫氧化鈉存在下使三甲氧基(苯基)矽烷水解,則可大致定量地生成。作為合成具有梯型結構之縮合物B的方法,可列舉:在三氯(苯基)矽烷水解後,以氫氧化鉀作為觸媒而進行鹼平衡化反應而合成的方法(Chem.Rev., 95, 1409 (1995))、以及藉由使用了相關移動觸媒的三氯(苯基)矽烷之水解聚縮合進行合成的方法(矽化學協會誌,(8),16(1997))。 Condensate B can be synthesized by dehydration condensation of dialkylsilanediol or dehydrochlorination reaction of dialkylsilanediol and dialkyldichlorosilane. By adjusting the concentration of the catalyst, solvent or substrate used, the ratio of formation of specific structures can be increased. The resulting product can be purified by recrystallization, solvent cleaning and column separation, and the specific structure can be isolated. The method is not particularly limited, for example, the methods described in the following documents, etc. can be used: general literature ((1) "Wide Application Fields and Technical Trends of Polysiloxane", by Yoshiaki Ono, Chemical Industry Daily Company; (2) "The Science of Silicon", by Nobuo Matsumoto, Society for Electronics, Information and Communication; (3) "The Latest Application Technology of Polysiloxane", supervised by Makoto Kumata and Masa Wada, CMC Publishing; (4) "Selection and Optimum Utilization of Silicon Compounds Technology", edited by Technology Information Association; (5) "Organosilicon Science in the 21st Century", supervised by Tamao Haoping, CMC Publishing; (6) "Chemistry and Application Development of Silsesquioxane Materials", supervised by Ito Maki, CMC publishing). TH 8 , which is one of the cage structures, can be synthesized, for example, by hydrolyzing trichlorosilane in the presence of ferric chloride (Bull. Chem. Soc. Jpn., 73, 215(2000)). Various derivatives can be synthesized by using TH 8 as a starting material and further chemically modifying it. For example, in the case of introducing an organic group by hydrosilylation of TH 8 , the organic group is introduced by reacting an alkenyl compound in the presence of a platinum catalyst. When TH 8 is reacted with chlorine, T Cl 8 is obtained, and if methyl orthoformate is further reacted, a methoxy group can be introduced. T Ph 4 T Ph 3 (ONa) 3 having a double-layer structure can be produced almost quantitatively by hydrolyzing trimethoxy(phenyl)silane in the presence of sodium hydroxide. As a method for synthesizing the condensate B having a ladder structure, the method of synthesizing by alkali equilibrium reaction using potassium hydroxide as a catalyst after hydrolysis of trichloro(phenyl)silane (Chem.Rev., 95, 1409 (1995)), and a synthesis method by hydrolysis polycondensation of trichloro(phenyl)silane using a related mobile catalyst (Journal of the Silicon Chemical Society, (8), 16(1997)).

另外,作為具有酸酐基之矽倍半氧烷化合物A,在後述實施例中,主要係使用具有無規型結構者,藉此可製造維持其他主要特性的同時韌性經改善的聚醯亞胺膜。其詳細理由尚不明確,但據認為是因為較柔軟(相較於無機填充物等)的矽倍半氧烷骨架成為微小區域,而容易允許作為母材的聚醯亞胺之變形。因此認為不限於使用具有無規型結構之矽倍半氧烷化合物A的情況,使用具有上述其他結構的矽倍半氧烷化合物A的情況亦可得到相同的效果。In addition, as the silsesquioxane compound A having an acid anhydride group, in the examples described later, those having a random structure are mainly used, thereby making it possible to manufacture a polyimide film with improved toughness while maintaining other main characteristics. . The detailed reason is not clear, but it is considered that the softer (compared to inorganic fillers, etc.) silsesquioxane skeleton becomes a small domain, which easily allows deformation of the polyimide as the base material. Therefore, it is considered that the same effect can be obtained not only when using the silsesquioxane compound A which has a random structure but also when using the silsesquioxane compound A which has another structure mentioned above.

<聚醯胺酸> 本發明的聚醯胺酸,係至少由上述具有酸酐基之矽倍半氧烷化合物A與羧酸類與二胺類的共聚合反應物。 <Polyamide> The polyamic acid of the present invention is at least a copolymerization reaction product of the above-mentioned silsesquioxane compound A having an anhydride group, carboxylic acids and diamines.

尤其是使用具有超過2個酸酐基之矽倍半氧烷化合物作為矽倍半氧烷化合物A的情況,作為共聚合成分,可在聚醯亞胺中形成交聯結構。Especially when a silsesquioxane compound having more than two acid anhydride groups is used as the silsesquioxane compound A, a crosslinked structure can be formed in the polyimide as a copolymerization component.

關於聚醯亞胺,一般而言,耐熱性、機械特性等實用特性與無色性(透明性或白色性)為權衡關係,因此特別期望出現一種製造維持其他主要特性的同時韌性經改善的聚醯亞胺膜的方法。Regarding polyimide, in general, practical properties such as heat resistance and mechanical properties are in a trade-off relationship with colorlessness (transparency or whiteness). Therefore, it is particularly desirable to produce a polyimide with improved toughness while maintaining other main properties. imine membrane method.

藉由使用以矽倍半氧烷化合物A作為共聚合成分的聚醯胺酸,可製造維持其他主要特性的同時韌性經改善的聚醯亞胺膜,故本發明的聚醯胺酸作為其原料等特別有用。聚醯亞胺膜可藉由例如包含下述步驟的方法獲得:在溶液中合成聚醯胺酸的步驟、將聚醯胺酸溶液薄膜化的步驟、將聚醯胺酸進行醯亞胺化的步驟。By using polyamic acid with silsesquioxane compound A as a copolymerization component, it is possible to manufacture a polyimide film with improved toughness while maintaining other main characteristics, so the polyamic acid of the present invention is used as its raw material etc. are particularly useful. The polyimide membrane can be obtained, for example, by a method comprising the steps of synthesizing polyamic acid in a solution, forming a polyamic acid solution into a thin film, and imidizing polyamic acid. step.

<聚醯胺酸的合成> 聚醯胺酸的合成,例如,可在溶劑中,使至少羧酸類、二胺類與具有二羧酸酐基之矽倍半氧烷化合物A反應而進行。亦即,作為矽倍半氧烷化合物A以外的單體成分,至少可使用羧酸類與二胺類。 <Synthesis of Polyamic Acid> Synthesis of polyamic acid can be carried out, for example, by reacting at least carboxylic acids, diamines, and silsesquioxane compound A having a dicarboxylic anhydride group in a solvent. That is, as monomer components other than the silsesquioxane compound A, at least carboxylic acids and diamines can be used.

作為羧酸類,並無特別限制,可使用一般用於聚醯亞胺合成、聚醯胺醯亞胺合成、聚醯胺合成的脂環式四羧酸酐、芳香族四羧酸酐及三羧酸類及二羧酸類等。從耐熱性的觀點來看,較佳為芳香族類,從透明性的觀點來看,較佳為脂環式類。此等可單獨使用,亦可併用兩種以上。The carboxylic acids are not particularly limited, and alicyclic tetracarboxylic anhydrides, aromatic tetracarboxylic anhydrides, tricarboxylic acids and Dicarboxylic acids, etc. From the viewpoint of heat resistance, aromatic ones are preferred, and from the viewpoint of transparency, alicyclic ones are preferred. These may be used alone or in combination of two or more.

作為本發明中的脂環式四羧酸酐,可列舉:1,2,3,4-環丁烷四甲酸、1,2,3,4-環戊烷四甲酸、1,2,3,4-環己烷四甲酸、1,2,4,5-環己烷四甲酸、3,3’,4,4’-雙環己基四甲酸、雙環[2,2,1]庚烷-2,3,5,6-四甲酸、雙環[2,2,2]辛烷-2,3,5,6-四甲酸、雙環[2,2,2]辛-7-烯-2,3,5,6-四甲酸、四氫蒽-2,3,6,7-四甲酸、十四氫-1,4:5,8:9,10-三甲橋蒽(trimethanoanthracene)- 2,3,6,7-四甲酸、十氫萘-2,3,6,7-四甲酸、十氫-1,4:5,8-二甲橋萘(dimethanonaphthalene)-2,3,6,7-四甲酸、十氫-1,4-橋亞乙基-5,8-甲橋萘-2,3,6,7-四甲酸、降莰烷-2-螺-α-環戊酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸(別名「降莰烷-2-螺-2’-環戊酮-5’-螺-2”-降莰烷-5,5”,6,6”-四甲酸」)、甲基降莰烷-2-螺-α-環戊酮-α’-螺-2”-(甲基降莰烷)-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環己酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸(別名「降莰烷-2-螺-2’-環己酮-6’-螺-2”-降莰烷-5,5”,6,6”-四甲酸」)、甲基降莰烷-2-螺-α-環己酮-α’-螺-2”-(甲基降莰烷)-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環丙酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環丁酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環庚酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環辛酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環壬酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環癸酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環十一酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環十二酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環十三酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環十四酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-環十五酮-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-(甲基環戊酮)-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸、降莰烷-2-螺-α-(甲基環己酮)-α’-螺-2”-降莰烷-5,5”,6,6”-四甲酸等的四羧酸及此等的酸酐。此等之中,宜為具有2個酸酐結構的二酐,尤其較佳為1,2,3,4-環丁烷四甲酸二酐、1,2,3,4-環己烷四甲酸二酐、1,2,4,5-環己烷四甲酸二酐,更佳為1,2,3,4-環丁烷四甲酸二酐、1,2,4,5-環己烷四甲酸二酐,再佳為1,2,3,4-環丁烷四甲酸二酐。另外,此等可單獨使用,亦可併用兩種以上。As the alicyclic tetracarboxylic acid anhydride in the present invention, 1,2,3,4-cyclobutane tetracarboxylic acid, 1,2,3,4-cyclopentane tetracarboxylic acid, 1,2,3,4 -Cyclohexanetetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid, 3,3',4,4'-bicyclohexyltetracarboxylic acid, bicyclo[2,2,1]heptane-2,3 ,5,6-tetracarboxylic acid, bicyclo[2,2,2]octane-2,3,5,6-tetracarboxylic acid, bicyclo[2,2,2]oct-7-ene-2,3,5, 6-tetracarboxylic acid, tetrahydroanthracene-2,3,6,7-tetracarboxylic acid, tetrahydro-1,4:5,8:9,10-trimethanoanthracene-2,3,6,7 -tetracarboxylic acid, decahydronaphthalene-2,3,6,7-tetracarboxylic acid, decahydro-1,4:5,8-dimethanonaphthalene-2,3,6,7-tetracarboxylic acid, Hydrogen-1,4-ethylidene-5,8-methanophthalene-2,3,6,7-tetracarboxylic acid, norbornane-2-spiro-α-cyclopentanone-α'-spiro-2 "-Norbornane-5,5",6,6"-tetracarboxylic acid (alias "norbornane-2-spiro-2'-cyclopentanone-5'-spiro-2"-norbornane-5, 5”,6,6”-tetracarboxylic acid”), methylnorbornane-2-spiro-α-cyclopentanone-α’-spiro-2”-(methylnorbornane)-5,5”, 6,6"-tetracarboxylic acid, norbornane-2-spiro-α-cyclohexanone-α'-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic acid (alias "norbornane Bornane-2-spiro-2'-cyclohexanone-6'-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic acid"), Methylnorbornane-2-spiro -α-cyclohexanone-α'-spiro-2"-(methylnorbornane)-5,5",6,6"-tetracarboxylic acid, norbornane-2-spiro-α-cyclopropanone-α '-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic acid, norbornane-2-spiro-α-cyclobutanone-α'-spiro-2"-norbornane- 5,5",6,6"-tetracarboxylic acid, norbornane-2-spiro-α-cycloheptanone-α'-spiro-2"-norbornane-5,5",6,6"-tetra Formic acid, norbornane-2-spiro-α-cyclooctanone-α'-spiro-2”-norbornane-5,5”,6,6”-tetracarboxylic acid, norbornane-2-spiro-α -Cyclononanone-α'-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic acid, norbornane-2-spiro-α-cyclodecanone-α'-spiro-2 "-Norbornane-5,5",6,6"-tetracarboxylic acid, norbornane-2-spiro-α-cycloundecanone-α'-spiro-2"-norbornane-5,5" ,6,6”-tetracarboxylic acid, norbornane-2-spiro-α-cyclododecanone-α’-spiro-2”-norbornane-5,5”,6,6”-tetracarboxylic acid, norbornane Bornane-2-spiro-α-cyclotridecanone-α'-spiro-2”-norbornane-5,5”,6,6”-tetracarboxylic acid, norbornane-2-spiro-α-ring Tetradecone-α'-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic acid, norbornane-2-spiro-α-cyclopentadecone-α'-spiro-2 "-Norbornane-5,5",6,6"-tetracarboxylic acid, norbornane-2-spiro-α-(methylcyclopentanone)-α'-spiro-2"-norbornane-5 ,5",6,6"-Tetracarboxylic acid, norbornane-2-spiro-α-(methylcyclohexanone)-α'-spiro-2"-norbornane-5,5",6,6 " - Tetracarboxylic acids such as tetracarboxylic acid and their anhydrides. Among these, dianhydrides having two acid anhydride structures are preferred, and 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-cyclohexanetetracarboxylic dicarboxylic acid dihydrogen are particularly preferred. anhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, more preferably 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride The dianhydride is more preferably 1,2,3,4-cyclobutanetetracarboxylic dianhydride. In addition, these may be used individually, and may use 2 or more types together.

作為本發明中的芳香族四羧酸酐,可列舉:4,4’-(2,2-六氟亞異丙基)二鄰苯二甲酸、4,4’-氧基二鄰苯二甲酸、雙(1,3-二側氧基-1,3-二氫-2-苯并呋喃-5-羧酸)1,4-伸苯基、雙(1,3-二側氧基-1,3-二氫-2-苯并呋喃-5-基)苯-1,4-二甲酸酯、4,4’-[4,4’-(3-側氧-1,3-二氫-2-苯并呋喃-1,1-二基)雙(苯-1,4-二基氧基)]二苯-1,2-二甲酸、3,3’,4,4’-二苯基酮四甲酸、4,4’-[(3-側氧-1,3-二氫-2-苯并呋喃-1,1-二基)雙(甲苯-2,5-二基氧基)]二苯-1,2-二甲酸、4,4’-[(3-側氧-1,3-二氫-2-苯并呋喃-1,1-二基)雙(1,4-二甲苯-2,5-二基氧基)]二苯-1,2-二甲酸、4,4’-[4,4’-(3-側氧-1,3-二氫-2-苯并呋喃-1,1-二基)雙(4-異丙基-甲苯-2,5-二基氧基)]二苯-1,2-二甲酸、4,4’-[4,4’-(3-側氧-1,3-二氫-2-苯并呋喃-1,1-二基)雙(萘-1,4-二基氧基)]二苯-1,2-二甲酸、4,4’-[4,4’-(3H-2,1-苯并氧硫醇-1,1-二氧化物-3,3-二基)雙(苯-1,4-二基氧基)]二苯-1,2-二甲酸、4,4’-二苯基酮四甲酸、4,4’-[(3H-2,1-苯并氧硫醇-1,1-二氧化物-3,3-二基)雙(甲苯-2,5-二基氧基)]二苯-1,2-二甲酸、4,4’-[(3H-2,1-苯并氧硫醇-1,1-二氧化物-3,3-二基)雙(1,4-二甲苯-2,5-二基氧基)]二苯-1,2-二甲酸、4,4’-[4,4’-(3H-2,1-苯并氧硫醇-1,1-二氧化物-3,3-二基)雙(4-異丙基-甲苯-2,5-二基氧基)]二苯-1,2-二甲酸、4,4’-[4,4’-(3H-2,1-苯并氧硫醇-1,1-二氧化物-3,3-二基)雙(萘-1,4-二基氧基)]二苯-1,2-二甲酸、3,3’,4,4’-二苯基酮四甲酸、3,3’,4,4’-二苯基酮四甲酸、3,3’,4,4’-二苯碸四甲酸、3,3’,4,4’-聯苯四甲酸、2,3,3’,4’-聯苯四甲酸、苯均四酸、4,4’-[螺(二苯并哌喃-9,9’-茀)-2,6-二基雙(氧基羰基)]二鄰苯二甲酸、4,4’-[螺(二苯并哌喃-9,9’-茀)-3,6-二基雙(氧基羰基)]二鄰苯二甲酸等的四羧酸及此等的酸酐。另外,芳香族四羧酸類可單獨使用,亦可併用兩種以上。Examples of the aromatic tetracarboxylic acid anhydride in the present invention include: 4,4'-(2,2-hexafluoroisopropylidene)diphthalic acid, 4,4'-oxydiphthalic acid, Bis(1,3-dioxo-1,3-dihydro-2-benzofuran-5-carboxylic acid)1,4-phenylene, bis(1,3-dioxo-1, 3-dihydro-2-benzofuran-5-yl)benzene-1,4-dicarboxylate, 4,4'-[4,4'-(3-oxo-1,3-dihydro- 2-benzofuran-1,1-diyl)bis(benzene-1,4-diyloxy)]diphenyl-1,2-dicarboxylic acid, 3,3',4,4'-diphenyl Ketotetracarboxylic acid, 4,4'-[(3-oxo-1,3-dihydro-2-benzofuran-1,1-diyl)bis(toluene-2,5-diyloxy)] Diphenyl-1,2-dicarboxylic acid, 4,4'-[(3-oxo-1,3-dihydro-2-benzofuran-1,1-diyl)bis(1,4-xylene -2,5-diyloxy)]diphenyl-1,2-dicarboxylic acid, 4,4'-[4,4'-(3-oxo-1,3-dihydro-2-benzofuran -1,1-diyl)bis(4-isopropyl-toluene-2,5-diyloxy)]diphenyl-1,2-dicarboxylic acid, 4,4'-[4,4'-( 3-oxo-1,3-dihydro-2-benzofuran-1,1-diyl)bis(naphthalene-1,4-diyloxy)]diphenyl-1,2-dicarboxylic acid, 4 ,4'-[4,4'-(3H-2,1-benzoxythiol-1,1-dioxide-3,3-diyl)bis(benzene-1,4-diyloxy )]diphenyl-1,2-dicarboxylic acid, 4,4'-diphenone tetracarboxylic acid, 4,4'-[(3H-2,1-benzoxythiol-1,1-dioxide -3,3-diyl)bis(toluene-2,5-diyloxy)]diphenyl-1,2-dicarboxylic acid, 4,4'-[(3H-2,1-benzoxythiol -1,1-dioxide-3,3-diyl)bis(1,4-xylene-2,5-diyloxy)]diphenyl-1,2-dicarboxylic acid, 4,4'- [4,4'-(3H-2,1-Benzothiol-1,1-dioxide-3,3-diyl)bis(4-isopropyl-toluene-2,5-diyl Oxy)]diphenyl-1,2-dicarboxylic acid, 4,4'-[4,4'-(3H-2,1-benzoxythiol-1,1-dioxide-3,3- Diyl)bis(naphthalene-1,4-diyloxy)]diphenyl-1,2-dicarboxylic acid, 3,3',4,4'-diphenyl ketone tetracarboxylic acid, 3,3',4 ,4'-diphenyl ketone tetracarboxylic acid, 3,3',4,4'-diphenyl tetracarboxylic acid, 3,3',4,4'-biphenyl tetracarboxylic acid, 2,3,3',4 '-Biphenyltetracarboxylic acid, pyromellitic acid, 4,4'-[spiro(dibenzopyran-9,9'-fluorene)-2,6-diylbis(oxycarbonyl)]diphthalic acid Tetracarboxylic acids such as dicarboxylic acid, 4,4'-[spiro(dibenzopyran-9,9'-fluorene)-3,6-diylbis(oxycarbonyl)]diphthalic acid and the like and other anhydrides. In addition, aromatic tetracarboxylic acids may be used alone or in combination of two or more.

作為三羧酸類,可列舉:苯偏三酸、1,2,5-萘三甲酸、二苯醚-3,3’,4’-三甲酸、二苯碸-3,3’,4’-三甲酸等芳香族三羧酸或六氫苯偏三酸等上述芳香族三羧酸之氫化物、乙二醇雙偏苯三酸酯、丙二醇雙偏苯三酸酯、1,4-丁二醇雙偏苯三酸酯、聚乙二醇雙偏苯三酸酯等的烷二醇雙偏苯三酸酯及此等的單酐、酯化物。此等之中,宜為具有一個酸酐結構的單酐,特佳為苯偏三酸酐、六氫苯偏三酸酐。又,此等可單獨使用,亦可組合多種使用。Tricarboxylic acids include trimellitic acid, 1,2,5-naphthalenetricarboxylic acid, diphenyl ether-3,3',4'-tricarboxylic acid, diphenylene-3,3',4'- Aromatic tricarboxylic acids such as tricarboxylic acid or hydrogenated products of the above-mentioned aromatic tricarboxylic acids such as hexahydrotrimellitic acid, ethylene glycol bis-trimellitate, propylene glycol bis-trimellitate, 1,4-butanediol Alkanediol bis-trimellitic acid esters such as alcohol bis-trimellitate and polyethylene glycol bis-trimellitate, and their monoanhydrides and esterified products. Among them, monoanhydrides having one acid anhydride structure are preferable, and trimellitic anhydride and hexahydrotrimellitic anhydride are particularly preferable. In addition, these may be used alone or in combination of multiple types.

作為二羧酸類,可列舉:對苯二甲酸、間苯二甲酸、鄰苯二甲酸、萘二甲酸、4,4’-氧基二苯甲酸等芳香族二羧酸或1,6-環己烷二甲酸等上述芳香族二羧酸之氫化物、乙二酸、丁二酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、十一烷二酸、十二烷二酸、2-甲基丁二酸及此等的醯氯或酯化物等。此等之中,宜為芳香族二羧酸及其氫化物,特佳為對苯二甲酸、1,6-環己烷二甲酸、4,4’-氧基二苯甲酸。又,二羧酸類可單獨使用亦可組合多種使用。Examples of dicarboxylic acids include aromatic dicarboxylic acids such as terephthalic acid, isophthalic acid, phthalic acid, naphthalene dicarboxylic acid, and 4,4'-oxydibenzoic acid, or 1,6-cyclohexyl Alkane dicarboxylic acid and other above-mentioned aromatic dicarboxylic acid hydrides, oxalic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecane dicarboxylic acid acid, dodecanedioic acid, 2-methylsuccinic acid and their acyl chlorides or esters, etc. Among them, aromatic dicarboxylic acids and their hydrogenated products are preferable, and terephthalic acid, 1,6-cyclohexanedicarboxylic acid, and 4,4'-oxydibenzoic acid are particularly preferable. Moreover, dicarboxylic acids may be used individually or in combination of multiple types.

作為羧酸類,特佳係選自下述之化學式表示的一種以上的化合物。As the carboxylic acids, one or more compounds selected from the compounds represented by the following chemical formulas are particularly preferred.

Figure 02_image023
Figure 02_image023

作為本發明中的二胺類,並無特別限制,可使用一般用於聚醯亞胺合成、聚醯胺醯亞胺合成、聚醯胺合成的芳香族二胺類、脂肪族二胺類、脂環式二胺類。從耐熱性的觀點來看,較佳為芳香族二胺類,從透明性的觀點來看,較佳為脂環式二胺。二胺類可單獨使用,亦可併用兩種以上。The diamines in the present invention are not particularly limited, and aromatic diamines, aliphatic diamines, aliphatic diamines, Alicyclic diamines. From the viewpoint of heat resistance, aromatic diamines are preferred, and from the viewpoint of transparency, alicyclic diamines are preferred. Diamines may be used alone or in combination of two or more.

作為芳香族二胺類,可列舉例如:2,2’-二甲基-4,4’-二胺基聯苯、1,4-雙[2-(4-胺基苯基)-2-丙基]苯、1,4-雙(4-胺基-2-三氟甲基苯氧基)苯、2,2’-二(三氟甲基)-4,4’-二胺基聯苯、4,4’-雙(4-胺基苯氧基)聯苯、4,4’-雙(3-胺基苯氧基)聯苯、雙[4-(3-胺基苯氧基)苯基]酮、雙[4-(3-胺基苯氧基)苯基]硫醚、雙[4-(3-胺基苯氧基)苯基]碸、2,2-雙[4-(3-胺基苯氧基)苯基]丙烷、2,2-雙[4-(3-胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、間苯二胺、鄰苯二胺、對苯二胺、間胺基苄胺、對胺基苄胺、4-胺基-N-(4-胺基苯基)苯甲醯胺、3,3’-二胺基二苯醚、3,4’-二胺基二苯醚、4,4’-二胺基二苯醚、2,2’-三氟甲基-4,4’-二胺基二苯醚、3,3’-二胺基二苯硫醚、3,4’-二胺基二苯硫醚、4,4’-二胺基二苯硫醚、3,3’-二胺基二苯基亞碸、3,4’-二胺基二苯基亞碸、4,4’-二胺基二苯基亞碸、3,3’-二胺基二苯碸、3,4’-二胺基二苯碸、4,4’-二胺基二苯碸、3,3’-二胺基二苯基酮、3,4’-二胺基二苯基酮、4,4’-二胺基二苯基酮、3,3’-二胺基二苯基甲烷、3,4’-二胺基二苯基甲烷、4,4’-二胺基二苯基甲烷、雙[4-(4-胺基苯氧基)苯基]甲烷、1,1-雙[4-(4-胺基苯氧基)苯基]乙烷、1,2-雙[4-(4-胺基苯氧基)苯基]乙烷、1,1-雙[4-(4-胺基苯氧基)苯基]丙烷、1,2-雙[4-(4-胺基苯氧基)苯基]丙烷、1,3-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、1,1-雙[4-(4-胺基苯氧基)苯基]丁烷、1,3-雙[4-(4-胺基苯氧基)苯基]丁烷、1,4-雙[4-(4-胺基苯氧基)苯基]丁烷、2,2-雙[4-(4-胺基苯氧基)苯基]丁烷、2,3-雙[4-(4-胺基苯氧基)苯基]丁烷、2-[4-(4-胺基苯氧基)苯基]-2-[4-(4-胺基苯氧基)-3-甲基苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)-3-甲基苯基]丙烷、2-[4-(4-胺基苯氧基)苯基]-2-[4-(4-胺基苯氧基)-3,5-二甲基苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-二甲基苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、1,4-雙(3-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、4,4’-雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]酮、雙[4-(4-胺基苯氧基)苯基]硫醚、雙[4-(4-胺基苯氧基)苯基]亞碸、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)苯基]醚、雙[4-(4-胺基苯氧基)苯基]醚、1,3-雙[4-(4-胺基苯氧基)苯甲醯基]苯、1,3-雙[4-(3-胺基苯氧基)苯甲醯基]苯、1,4-雙[4-(3-胺基苯氧基)苯甲醯基]苯、4,4’-雙[(3-胺基苯氧基)苯甲醯基]苯、1,1-雙[4-(3-胺基苯氧基)苯基]丙烷、1,3-雙[4-(3-胺基苯氧基)苯基]丙烷、3,4’-二胺基二苯硫醚、2,2-雙[3-(3-胺基苯氧基)苯基]-1,1,1,3,3,3-六氟丙烷、雙[4-(3-胺基苯氧基)苯基]甲烷、1,1-雙[4-(3-胺基苯氧基)苯基]乙烷、1,2-雙[4-(3-胺基苯氧基)苯基]乙烷、雙[4-(3-胺基苯氧基)苯基]亞碸、4,4’-雙[3-(4-胺基苯氧基)苯甲醯基]二苯醚、4,4’-雙[3-(3-胺基苯氧基)苯甲醯基]二苯醚、4,4’-雙[4-(4-胺基-α,α-二甲基苄基)苯氧基]二苯基酮、4,4’-雙[4-(4-胺基-α,α-二甲基苄基)苯氧基]二苯碸、雙[4-{4-(4-胺基苯氧基)苯氧基}苯基]碸、1,4-雙[4-(4-胺基苯氧基)苯氧基-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基苯氧基)苯氧基-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-三氟甲基苯氧基)-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-氟苯氧基)-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-甲基苯氧基)-α,α-二甲基苄基]苯、1,3-雙[4-(4-胺基-6-氰基苯氧基)-α,α-二甲基苄基]苯、3,3’-二胺基-4,4’-二苯氧基二苯基酮、4,4’-二胺基-5,5’-二苯氧基二苯基酮、3,4’-二胺基-4,5’-二苯氧基二苯基酮、3,3’-二胺基-4-苯氧基二苯基酮、4,4’-二胺基-5-苯氧基二苯基酮、3,4’-二胺基-4-苯氧基二苯基酮、3,4’-二胺基-5’-苯氧基二苯基酮、3,3’-二胺基-4,4’-二聯苯氧基二苯基酮、4,4’-二胺基-5,5’-二聯苯氧基二苯基酮、3,4’-二胺基-4,5’-二聯苯氧基二苯基酮、3,3’-二胺基-4-聯苯氧基二苯基酮、4,4’-二胺基-5-聯苯氧基二苯基酮、3,4’-二胺基-4-聯苯氧基二苯基酮、3,4’-二胺基-5’-聯苯氧基二苯基酮、1,3-雙(3-胺基-4-苯氧基苯甲醯基)苯、1,4-雙(3-胺基-4-苯氧基苯甲醯基)苯、1,3-雙(4-胺基-5-苯氧基苯甲醯基)苯、1,4-雙(4-胺基-5-苯氧基苯甲醯基)苯、1,3-雙(3-胺基-4-聯苯氧基苯甲醯基)苯、1,4-雙(3-胺基-4-聯苯氧基苯甲醯基)苯、1,3-雙(4-胺基-5-聯苯氧基苯甲醯基)苯、1,4-雙(4-胺基-5-聯苯氧基苯甲醯基)苯、2,6-雙[4-(4-胺基-α,α-二甲基苄基)苯氧基]苯甲腈,4,4’-[9H-茀-9,9-二基]雙苯胺(別名「9,9-雙(4-胺基苯基)茀」)、螺(二苯并哌喃-9,9’-茀)-2,6-二基雙(氧基羰基)]雙苯胺、4,4’-[螺(二苯并哌喃-9,9’-茀)-2,6-二基雙(氧基羰基)]雙苯胺、4,4’-[螺(二苯并哌喃-9,9’-茀)-3,6-二基雙(氧基羰基)]雙苯胺、5-胺基-2-(對胺基苯基)苯并㗁唑、6-胺基-2-(對胺基苯基)苯并㗁唑、5-胺基-2-(間胺基苯基)苯并㗁唑、6-胺基-2-(間胺基苯基)苯并㗁唑、2,2’-對伸苯基雙(5-胺基苯并㗁唑)、2,2’-對伸苯基雙(6-胺基苯并㗁唑)、1-(5-胺基苯并㗁唑)-4-(6-胺基苯并㗁唑)苯、2,6-(4,4’-二胺基二苯基)苯并[1,2-d:5,4-d’]雙㗁唑、2,6-(4,4’-二胺基二苯基)苯并[1,2-d:4,5-d’]雙㗁唑、2,6-(3,4’-二胺基二苯基)苯并[1,2-d:5,4-d’]雙㗁唑、2,6-(3,4’-二胺基二苯基)苯并[1,2-d:4,5-d’]雙㗁唑、2,6-(3,3’-二胺基二苯基)苯并[1,2-d:5,4-d’]雙㗁唑、2,6-(3,3’-二胺基二苯基)苯并[1,2-d:4,5-d’]雙㗁唑等。又,上述芳香族二胺的芳香環上的氫原子之一部分或全部可由鹵素原子、碳數1~3的烷基或烷氧基或氰基取代,再者前述碳數1~3的烷基或烷氧基的氫原子之一部份或全部亦可由鹵素原子所取代。Examples of aromatic diamines include 2,2'-dimethyl-4,4'-diaminobiphenyl, 1,4-bis[2-(4-aminophenyl)-2- Propyl]benzene, 1,4-bis(4-amino-2-trifluoromethylphenoxy)benzene, 2,2'-bis(trifluoromethyl)-4,4'-diaminobis Benzene, 4,4'-bis(4-aminophenoxy)biphenyl, 4,4'-bis(3-aminophenoxy)biphenyl, bis[4-(3-aminophenoxy) ) phenyl] ketone, bis[4-(3-aminophenoxy)phenyl]sulfide, bis[4-(3-aminophenoxy)phenyl]pyridine, 2,2-bis[4 -(3-aminophenoxy)phenyl]propane, 2,2-bis[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoro Propane, m-phenylenediamine, o-phenylenediamine, p-phenylenediamine, m-aminobenzylamine, p-aminobenzylamine, 4-amino-N-(4-aminophenyl) benzamide, 3 ,3'-Diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 2,2'-trifluoromethyl-4,4'- Diaminodiphenyl ether, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3' -Diaminodiphenylene, 3,4'-diaminodiphenylene, 4,4'-diaminodiphenylene, 3,3'-diaminodiphenylene, 3,4'-diaminodiphenylphenone, 4,4'-diaminodiphenylphenone, 3,3'-diaminodiphenylketone, 3,4'-diaminodiphenylketone, 4,4'-diaminodiphenylketone, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane Methane, bis[4-(4-aminophenoxy)phenyl]methane, 1,1-bis[4-(4-aminophenoxy)phenyl]ethane, 1,2-bis[4 -(4-aminophenoxy)phenyl]ethane, 1,1-bis[4-(4-aminophenoxy)phenyl]propane, 1,2-bis[4-(4-amine phenoxy)phenyl]propane, 1,3-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)benzene base] propane, 1,1-bis[4-(4-aminophenoxy)phenyl]butane, 1,3-bis[4-(4-aminophenoxy)phenyl]butane, 1,4-bis[4-(4-aminophenoxy)phenyl]butane, 2,2-bis[4-(4-aminophenoxy)phenyl]butane, 2,3- Bis[4-(4-aminophenoxy)phenyl]butane, 2-[4-(4-aminophenoxy)phenyl]-2-[4-(4-aminophenoxy) )-3-methylphenyl]propane, 2,2-bis[4-(4-aminophenoxy)-3-methylphenyl]propane, 2-[4-(4-aminophenoxy base)phenyl]-2-[4-(4-aminophenoxy)-3,5-dimethylphenyl]propane, 2,2-bis[4-(4-aminophenoxy) -3,5-Dimethylphenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropane, 1,4-bis(3-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 4, 4'-bis(4-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ketone, bis[4-(4-aminophenoxy)phenyl] Thioether, bis[4-(4-aminophenoxy)phenyl]pyridine, bis[4-(4-aminophenoxy)phenyl]pyridine, bis[4-(3-aminophenoxy)phenylene oxy)phenyl]ether, bis[4-(4-aminophenoxy)phenyl]ether, 1,3-bis[4-(4-aminophenoxy)benzoyl]benzene, 1,3-bis[4-(3-aminophenoxy)benzoyl]benzene, 1,4-bis[4-(3-aminophenoxy)benzoyl]benzene, 4, 4'-bis[(3-aminophenoxy)benzoyl]benzene, 1,1-bis[4-(3-aminophenoxy)phenyl]propane, 1,3-bis[4 -(3-aminophenoxy)phenyl]propane, 3,4'-diaminodiphenylsulfide, 2,2-bis[3-(3-aminophenoxy)phenyl]-1 ,1,1,3,3,3-Hexafluoropropane, bis[4-(3-aminophenoxy)phenyl]methane, 1,1-bis[4-(3-aminophenoxy) Phenyl]ethane, 1,2-bis[4-(3-aminophenoxy)phenyl]ethane, bis[4-(3-aminophenoxy)phenyl]pyridine, 4, 4'-bis[3-(4-aminophenoxy)benzoyl]diphenyl ether, 4,4'-bis[3-(3-aminophenoxy)benzoyl]diphenyl Ether, 4,4'-bis[4-(4-amino-α,α-dimethylbenzyl)phenoxy]diphenyl ketone, 4,4'-bis[4-(4-amino -α,α-Dimethylbenzyl)phenoxy]diphenylphenone, bis[4-{4-(4-aminophenoxy)phenoxy}phenyl]phenone, 1,4-bis[ 4-(4-aminophenoxy)phenoxy-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4-aminophenoxy)phenoxy-α, α-Dimethylbenzyl]benzene, 1,3-bis[4-(4-amino-6-trifluoromethylphenoxy)-α,α-dimethylbenzyl]benzene, 1,3 -Bis[4-(4-amino-6-fluorophenoxy)-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4-amino-6-methylbenzene oxy)-α,α-dimethylbenzyl]benzene, 1,3-bis[4-(4-amino-6-cyanophenoxy)-α,α-dimethylbenzyl]benzene , 3,3'-diamino-4,4'-diphenoxydiphenyl ketone, 4,4'-diamino-5,5'-diphenoxydiphenyl ketone, 3,4 '-Diamino-4,5'-diphenoxydiphenyl ketone, 3,3'-diamino-4-phenoxydiphenyl ketone, 4,4'-diamino-5- Phenoxydiphenyl ketone, 3,4'-diamino-4-phenoxydiphenyl ketone, 3,4'-diamino-5'-phenoxydiphenyl ketone, 3,3 '-Diamino-4,4'-bisphenoxydiphenyl ketone, 4,4'-diamino-5,5'-bisphenoxydiphenyl ketone, 3,4'- Diamino-4,5'-biphenoxydiphenyl ketone, 3,3'-diamino-4-biphenoxydiphenyl ketone, 4,4'-diamino-5- Biphenoxy diphenyl ketone, 3,4'-diamino-4-biphenoxy diphenyl ketone, 3,4'-diamino-5'-biphenoxy diphenyl ketone, 1,3-bis(3-amino-4-phenoxybenzoyl)benzene, 1,4-bis(3-amino-4-phenoxybenzoyl)benzene, 1,3- Bis(4-amino-5-phenoxybenzoyl)benzene, 1,4-bis(4-amino-5-phenoxybenzoyl)benzene, 1,3-bis(3- Amino-4-biphenoxybenzoyl)benzene, 1,4-bis(3-amino-4-biphenoxybenzoyl)benzene, 1,3-bis(4-amino -5-biphenoxybenzoyl)benzene, 1,4-bis(4-amino-5-biphenoxybenzoyl)benzene, 2,6-bis[4-(4-amine Base-α,α-Dimethylbenzyl)phenoxy]benzonitrile, 4,4'-[9H-Ocea-9,9-diyl]bisaniline (alias "9,9-bis(4- Aminophenyl) fluorine"), spiro(dibenzopyran-9,9'-fluorene)-2,6-diylbis(oxycarbonyl)]bisaniline, 4,4'-[spiro(di Benzopyran-9,9'-fluorene)-2,6-diylbis(oxycarbonyl)]bisaniline, 4,4'-[spiro(dibenzopyran-9,9'-fluorene) -3,6-diylbis(oxycarbonyl)]bisaniline, 5-amino-2-(p-aminophenyl)benzoxazole, 6-amino-2-(p-aminophenyl) Benzoxazole, 5-amino-2-(m-aminophenyl)benzoxazole, 6-amino-2-(m-aminophenyl)benzoxazole, 2,2'-para Phenylbis(5-aminobenzoxazole), 2,2'-p-phenylenebis(6-aminobenzoxazole), 1-(5-aminobenzoxazole)-4- (6-aminobenzoxazole)benzene, 2,6-(4,4'-diaminodiphenyl)benzo[1,2-d:5,4-d']bisoxazole, 2 ,6-(4,4'-diaminodiphenyl)benzo[1,2-d:4,5-d']bisoxazole, 2,6-(3,4'-diaminodiphenyl Phenyl)benzo[1,2-d:5,4-d']bisoxazole, 2,6-(3,4'-diaminodiphenyl)benzo[1,2-d:4 ,5-d']bisoxazole, 2,6-(3,3'-diaminodiphenyl)benzo[1,2-d:5,4-d']bisoxazole, 2,6 -(3,3'-diaminodiphenyl)benzo[1,2-d:4,5-d']bisoxazole, etc. In addition, part or all of the hydrogen atoms on the aromatic ring of the above-mentioned aromatic diamine may be substituted by a halogen atom, an alkyl group or an alkoxy group with 1 to 3 carbons, or a cyano group, and the aforementioned alkyl group with 1 to 3 carbons Or part or all of the hydrogen atoms of the alkoxy group may be substituted by halogen atoms.

作為脂環式二胺類,可列舉例如:1,4-二胺基環己烷、1,4-二胺基-2-甲基環己烷、1,4-二胺基-2-乙基環己烷、1,4-二胺基-2-正丙基環己烷、1,4-二胺基-2-異丙基環己烷、1,4-二胺基-2-正丁基環己烷、1,4-二胺基-2-異丁基環己烷、1,4-二胺基-2-二級丁基環己烷、1,4-二胺基-2-三級丁基環己烷、4,4’-亞甲基雙(2,6-二甲基環己胺)、9,10-雙(4-胺基苯基)腺嘌呤、2,4-雙(4-胺基苯基)環丁烷-1,3-二甲酸二甲酯等。Examples of alicyclic diamines include 1,4-diaminocyclohexane, 1,4-diamino-2-methylcyclohexane, 1,4-diamino-2-ethane Cyclohexane, 1,4-diamino-2-n-propylcyclohexane, 1,4-diamino-2-isopropylcyclohexane, 1,4-diamino-2-n- Butylcyclohexane, 1,4-diamino-2-isobutylcyclohexane, 1,4-diamino-2-secondary butylcyclohexane, 1,4-diamino-2 -Tertiary butylcyclohexane, 4,4'-methylenebis(2,6-dimethylcyclohexylamine), 9,10-bis(4-aminophenyl)adenine, 2,4 -Dimethyl bis(4-aminophenyl)cyclobutane-1,3-dicarboxylate and the like.

作為二胺類,尤其較佳為包含4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB)或4,4’-二胺基苯甲醯胺苯(DABA),更佳為4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB)或4,4’-二胺基苯甲醯胺苯(DABA)。As diamines, it is especially preferred to include 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl (TFMB) or 4,4'-diaminobenzamide benzene (DABA), more preferably 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl (TFMB) or 4,4'-diaminobenzamidobenzene (DABA) .

以源自矽倍半氧烷化合物A的結構單元之2價單體作為基準的莫耳含有率:(nA/(nA+nD))×100(此處,nA為以源自前述矽倍半氧烷化合物A的結構單元之總莫耳數除以前述二羧酸酐基的總數再乘以2倍所得之數值,nD為源自前述羧酸類的結構單元的莫耳數)較佳為0.01~10.0莫耳%。若矽倍半氧烷化合物A的上述莫耳含有率為0.01莫耳%以上,則可得到複合化的效果,若上述莫耳含有率為10.0莫耳%以下,則聚醯胺酸溶液不易發生凝膠化,容易得到經時穩定性。因此,上述莫耳含有率再佳為0.1~5.0莫耳%。The molar content based on the divalent monomer derived from the structural unit of silsesquioxane compound A: (nA/(nA+nD))×100 (here, nA is derived from the aforementioned silsesquioxane The value obtained by dividing the total number of moles of the structural units of the oxane compound A by the total number of the aforementioned dicarboxylic acid anhydride groups and multiplying by 2 times, nD is the molar number of the structural units derived from the aforementioned carboxylic acids) is preferably 0.01~ 10.0 mole %. When the above-mentioned molar content of silsesquioxane compound A is 0.01 mol% or more, the compounding effect can be obtained, and if the above-mentioned molar content is 10.0 mol% or less, polyamic acid solution is less likely to generate Gel-forming, easy to obtain stability over time. Therefore, the above molar content is more preferably 0.1 to 5.0 mole%.

尤其是矽倍半氧烷化合物A每一分子中的酸酐基數為2~5的情況,上述莫耳含有率更佳為0.1~10.0莫耳%。又,矽倍半氧烷化合物A每一分子中的酸酐基數為5~10的情況,上述莫耳含有率更佳為0.1~5.0莫耳%。Especially when the number of acid anhydride groups per molecule of the silsesquioxane compound A is 2 to 5, the molar content is more preferably 0.1 to 10.0 mole%. Also, when the number of acid anhydride groups per molecule of the silsesquioxane compound A is 5 to 10, the molar content is more preferably 0.1 to 5.0 mole%.

作為聚醯胺酸的合成中所使用之溶劑,只要是可將聚醯胺酸與其單體溶解的溶劑,則可使用任意者,可列舉例如:非質子性溶劑、酚系溶劑、醚及二醇系溶劑等。As the solvent used in the synthesis of polyamic acid, any solvent can be used as long as it can dissolve the polyamic acid and its monomer, for example: aprotic solvent, phenolic solvent, ether and Alcohol-based solvents, etc.

具體而言,作為非質子性溶劑,可列舉:N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮、N-甲基己內醯胺、1,3-二甲基咪唑啶酮、四甲基尿素等醯胺系溶劑;γ-丁內酯、γ-戊內酯等的內酯系溶劑;六甲基磷醯胺、六甲基膦三醯胺等的含磷系醯胺系溶劑;二甲基碸、二甲基亞碸、環丁碸等的含硫系溶劑;環己酮、甲基環己酮等酮系溶劑;甲吡啶、吡啶等3級胺系溶劑;乙酸(2-甲氧基-1-甲基乙基)等酯系溶劑等。Specifically, examples of the aprotic solvent include N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N-methyl Amide-based solvents such as caprolactam, 1,3-dimethylimidazolidinone, and tetramethylurea; lactone-based solvents such as γ-butyrolactone and γ-valerolactone; hexamethylphosphoramide Phosphorus-containing amide-based solvents such as hexamethylphosphine triamide; sulfur-containing solvents such as dimethylsulfoxide, dimethylsulfoxide, and cyclobutylene; ketones such as cyclohexanone and methylcyclohexanone solvents; tertiary amine solvents such as picoline and pyridine; ester solvents such as acetic acid (2-methoxy-1-methylethyl), etc.

作為酚系溶劑,可列舉:酚、鄰甲酚、間甲酚、對甲酚、2,3-二甲酚、2,4-二甲酚、2,5-二甲酚、2,6-二甲酚、3,4-二甲酚、3,5-二甲酚等。作為醚及二醇系溶劑,可列舉:1,2-二甲氧基乙烷、雙(2-甲氧基乙基)醚、1,2-雙(2-甲氧基乙氧基)乙烷、雙[2-(2-甲氧基乙氧基)乙基]醚、四氫呋喃、1,4-二㗁烷等。Examples of phenolic solvents include: phenol, o-cresol, m-cresol, p-cresol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, Xylenol, 3,4-xylenol, 3,5-xylenol, etc. Examples of ether and glycol-based solvents include: 1,2-dimethoxyethane, bis(2-methoxyethyl)ether, 1,2-bis(2-methoxyethoxy)ethane alkane, bis[2-(2-methoxyethoxy)ethyl]ether, tetrahydrofuran, 1,4-dioxane, etc.

其中,從溶解性及塗膜形成性的觀點來看,作為溶劑,較佳為包含N-甲基-2-吡咯啶酮、N,N’-二甲基乙醯胺或γ-丁內酯作為主成分。上述的溶劑可單獨使用或將2種以上混合使用。Among them, from the viewpoint of solubility and coating film formation, the solvent preferably contains N-methyl-2-pyrrolidone, N,N'-dimethylacetamide, or γ-butyrolactone. as the main component. The above-mentioned solvents may be used alone or in combination of two or more.

作為合成時的條件,反應溫度較佳為-30~200℃,更佳為20~180℃,特佳為20~100℃。在室溫(20~25℃)或適當的反應溫度下持續攪拌,可將聚醯亞胺前驅物的黏度為固定的時間點當作反應的終點。上述反應一般可在3~100小時結束。As conditions at the time of synthesis, the reaction temperature is preferably from -30 to 200°C, more preferably from 20 to 180°C, particularly preferably from 20 to 100°C. Stirring is continued at room temperature (20-25° C.) or at an appropriate reaction temperature, and the time point at which the viscosity of the polyimide precursor becomes constant can be regarded as the end of the reaction. The above reaction can generally be completed within 3 to 100 hours.

<聚醯胺酸組成物> 本發明的聚醯胺酸組成物包含如上述的聚醯胺酸與溶劑。聚醯胺酸組成物中,亦可包含與合成時所使用之溶劑不同的溶劑,但從避免製造步驟繁瑣的觀點來看,較佳係含有合成時所使用的溶劑。因此,聚醯胺酸組成物所含有之溶劑的主成分較佳為N-甲基-2-吡咯啶酮、N,N’-二甲基乙醯胺或γ-丁內酯。 <Polyamide Composition> The polyamic acid composition of the present invention comprises the above-mentioned polyamic acid and a solvent. The polyamic acid composition may contain a solvent different from the solvent used for synthesis, but it is preferable to contain the solvent used for synthesis from the viewpoint of avoiding complicated production steps. Therefore, the main component of the solvent contained in the polyamide acid composition is preferably N-methyl-2-pyrrolidone, N,N'-dimethylacetamide or γ-butyrolactone.

作為聚醯胺酸的含量,從製膜時之膜厚的觀點來看,聚醯胺酸組成物中,較佳為5~30質量%,更佳為10~20質量%。若含量在此範圍內,則可得到操作優良之膜厚的薄膜。The content of polyamic acid is preferably from 5 to 30% by mass, more preferably from 10 to 20% by mass, in the polyamic acid composition from the viewpoint of film thickness at the time of film formation. If the content is within this range, a thin film with excellent handling and film thickness can be obtained.

聚醯胺酸組成物中亦可更包含接著性賦予劑、界面活性劑、調平劑、抗氧化劑、UV吸收劑、化學醯亞胺化劑、著色劑等任意成分。又,亦可更包含聚醯亞胺膜可含有的填充物等。The polyamic acid composition may further include optional components such as adhesion imparting agents, surfactants, leveling agents, antioxidants, UV absorbers, chemical imidization agents, and colorants. Moreover, the filler etc. which a polyimide film can contain may be contained further.

<聚醯亞胺> 本發明的聚醯亞胺,係以上所說明之聚醯胺酸進行醯亞胺化而成者。聚醯亞胺,例如可藉由將前述聚醯胺酸加熱而獲得。藉由加熱,聚醯胺酸的羧基分別脫水閉環,聚醯胺酸進行醯亞胺化而形成聚醯亞胺結構。 <Polyimide> The polyimide of the present invention is obtained by imidizing the polyamic acid described above. Polyimide can be obtained, for example, by heating the aforementioned polyamic acid. By heating, the carboxyl groups of the polyamic acid are respectively dehydrated and ring-closed, and the polyamic acid undergoes imidization to form a polyimide structure.

聚醯亞胺可藉由將聚醯胺酸在溶劑中加熱而獲得。將聚醯胺酸進行醯亞胺化時的加熱溫度,在溶劑中較佳為150~220℃。Polyimide can be obtained by heating polyamic acid in a solvent. The heating temperature for imidizing polyamic acid is preferably 150 to 220°C in a solvent.

又,聚醯亞胺,如後所述,藉由將包含溶劑的聚醯胺酸組成物塗布於基材並加熱,可作為膜狀或薄膜狀的成形體而提供。將聚醯胺酸進行醯亞胺化時的加熱溫度,在溶劑經乾燥至一定程度的狀態下,較佳為250~400℃。Also, polyimide can be provided as a film-like or film-like molded article by applying a polyamic acid composition containing a solvent to a substrate and heating as described later. The heating temperature for imidizing polyamic acid is preferably 250 to 400° C. in a state where the solvent is dried to a certain extent.

又,亦可藉由化學醯亞胺化代替熱醯亞胺化來得到聚醯亞胺。此情況中,作為醯亞胺化促進劑,較佳係使用3級胺。作為3級胺,再佳為雜環式的3級胺。雜環式之3級胺的較佳具體例,可列舉:吡啶、2,5-二乙基吡啶、甲吡啶、喹啉、異喹啉等。In addition, polyimide can also be obtained by chemical imidization instead of thermal imidization. In this case, it is preferable to use a tertiary amine as an imidization accelerator. The tertiary amine is further preferably a heterocyclic tertiary amine. Preferable specific examples of heterocyclic tertiary amines include pyridine, 2,5-diethylpyridine, picoline, quinoline, and isoquinoline.

<聚醯亞胺膜> 本發明的聚醯亞胺膜包含如上所述的聚醯亞胺。聚醯亞胺膜由2層以上所構成的情況,只要至少1層包含本發明的聚醯亞胺即可。 <Polyimide film> The polyimide film of the present invention comprises the polyimide as described above. When the polyimide film is composed of two or more layers, at least one layer only needs to contain the polyimide of the present invention.

聚醯亞胺膜例如可以下述方式獲得:藉由將聚醯胺酸溶液澆鑄於基板上並加熱以使溶劑揮發,形成厚度1~100μm的均勻生胚膜,再對其進行醯亞胺化。作為藉由這樣的鑄造法形成膜的情況中所使用之基板,可列舉:高分子膜、玻璃板、矽橡膠板、金屬板等。The polyimide film can be obtained, for example, by casting a polyamic acid solution on a substrate and heating to volatilize the solvent to form a uniform green film with a thickness of 1 to 100 μm, which is then imidized . Examples of the substrate used when forming a film by such a casting method include a polymer film, a glass plate, a silicon rubber plate, a metal plate, and the like.

作為高分子膜,例如可使用聚對苯二甲酸乙二酯製膜A4100(東洋紡股份有限公司製)。又,得到既定厚度之生胚膜時,可採用調整聚醯胺酸溶液之濃度的方法、調整塗布機之間距的方法、重複澆鑄並進行積層以成為目標膜厚的方法,藉此可製作目標膜厚的基板。再者,藉由對於所得之生胚膜進行熱處理以進行熱醯亞胺化,可得到聚醯亞胺膜。As the polymer film, polyethylene terephthalate film A4100 (manufactured by Toyobo Co., Ltd.), for example, can be used. In addition, when obtaining a green film with a predetermined thickness, the method of adjusting the concentration of the polyamic acid solution, the method of adjusting the distance between the coating machines, and the method of repeating casting and lamination to achieve the target film thickness can be used to make the target film. Thick film substrate. Furthermore, a polyimide film can be obtained by heat-treating the obtained green film to perform thermal imidization.

聚醯亞胺膜為單層構成亦無妨,為2層以上的積層構成亦無妨。從聚醯亞胺膜的物理強度及與無機基板的易剝離性來看,較佳為2層以上的積層構成,3層以上的積層構成亦無妨。另外,本說明書中,聚醯亞胺膜為2層以上之積層構成時的物性(黃色指數、總透光率、霧度等),若未特別說明,則係指聚醯亞胺膜整體的值。The polyimide film may have a single-layer configuration, or may have a laminated configuration of two or more layers. From the viewpoint of the physical strength of the polyimide film and the ease of peeling from the inorganic substrate, a laminated structure of two or more layers is preferable, and a laminated structure of three or more layers is also acceptable. In addition, in this specification, the physical properties (yellow index, total light transmittance, haze, etc.) when the polyimide film is composed of two or more layers refer to the properties of the entire polyimide film unless otherwise specified. value.

聚醯亞胺膜的厚度較佳為5μm以上,更佳為7μm以上。前述聚醯亞胺膜之厚度的上限並無特別限制,但為了作為可撓式電子元件使用,較佳為200μm以下,更佳為90μm以下,再佳為50μm以下。若太薄則難以製膜、運送,若太厚則難以作為捲筒運送等。The thickness of the polyimide film is preferably at least 5 μm, more preferably at least 7 μm. The upper limit of the thickness of the polyimide film is not particularly limited, but for use as a flexible electronic component, it is preferably less than 200 μm, more preferably less than 90 μm, and even more preferably less than 50 μm. If it is too thin, it will be difficult to form a film and to transport it, and if it is too thick, it will be difficult to transport it as a roll.

本發明中的聚醯亞胺膜的總透光率較佳為75%以上,更佳為85%以上,再佳為87%以上,再更佳為88%以上。前述聚醯亞胺膜的總透光率之上限並無特別限制,為了作為可撓式電子元件使用,較佳為98%以下,更佳為97%以下。The total light transmittance of the polyimide film in the present invention is preferably above 75%, more preferably above 85%, even more preferably above 87%, even more preferably above 88%. The upper limit of the total light transmittance of the polyimide film is not particularly limited, but it is preferably less than 98%, more preferably less than 97%, in order to be used as a flexible electronic component.

本發明中的聚醯亞胺膜的霧度較佳為1.0以下,更佳為0.8以下,再佳為0.5以下,再更佳為0.3以下。The haze of the polyimide film in the present invention is preferably 1.0 or less, more preferably 0.8 or less, further preferably 0.5 or less, still more preferably 0.3 or less.

本發明中的聚醯亞胺膜的黃色指數(以下亦稱為「黃色指數」或「YI」)較佳為20以下,更佳為15以下,再佳為10以下,再更佳為5以下。前述聚醯亞胺膜的黃色指數的下限並無特別限制,但為了作為可撓式電子元件使用,較佳為0.1以上,更佳為0.2以上,再佳為0.3以上。The yellowness index (hereinafter also referred to as "yellow index" or "YI") of the polyimide film in the present invention is preferably 20 or less, more preferably 15 or less, more preferably 10 or less, and more preferably 5 or less . The lower limit of the yellowness index of the polyimide film is not particularly limited, but it is preferably at least 0.1, more preferably at least 0.2, and even more preferably at least 0.3 for use as a flexible electronic component.

本發明中的聚醯亞胺膜的厚度方向相位差(Rth)較佳為500nm以下,更佳為300nm以下,再佳為200nm以下,再更佳為100nm以下。前述聚醯亞胺膜之Rth的下限並無特別限制,但為了作為可撓式電子元件使用,較佳為0.1nm以上,更佳為0.5nm以上。The thickness direction retardation (Rth) of the polyimide film in the present invention is preferably less than 500 nm, more preferably less than 300 nm, more preferably less than 200 nm, and more preferably less than 100 nm. The lower limit of Rth of the polyimide film is not particularly limited, but it is preferably 0.1 nm or more, more preferably 0.5 nm or more for use as a flexible electronic device.

另外,展現本發明之線膨脹係數(CTE)的無色透明性高之聚醯亞胺膜,在聚醯亞胺膜的成膜過程中,即使進行延伸亦可實現。該延伸操作可藉由下述方法實現:將聚醯亞胺溶液塗布於聚醯亞胺膜製作用支撐體上並進行乾燥,成為包含1~50質量%之溶劑的聚醯亞胺膜,再於用以製作聚醯亞胺膜的支撐體上或是從該支撐體剝離的狀態下,對於包含1~50質量%之溶劑的聚醯亞胺膜進行高溫處理以使其乾燥的過程中,在MD方向上延伸1.5倍至4.0倍,在TD方向上延伸1.4倍至3.0倍。此時,使用未延伸的熱塑性高分子膜作為用以製作聚醯亞胺膜的支撐體,在將熱塑性高分子膜與聚醯亞胺膜同時延伸後,將延伸後的聚醯亞胺膜從熱塑性高分子膜剝離,藉此尤其可防止在MD方向上延伸時在聚醯亞胺膜上造成傷痕,可得到更高品質的無色透明性高之聚醯亞胺膜。In addition, a colorless and highly transparent polyimide film exhibiting the coefficient of linear expansion (CTE) of the present invention can be realized even if it is stretched during the film-forming process of the polyimide film. This extension operation can be realized by the following method: apply the polyimide solution on the support body for polyimide film production and dry it to become a polyimide film containing 1 to 50% by mass of solvent, and then In the process of drying the polyimide film containing 1 to 50% by mass of solvent on the support or in the state peeled off from the support for making the polyimide film, It extends 1.5 times to 4.0 times in the MD direction and 1.4 times to 3.0 times in the TD direction. At this time, an unstretched thermoplastic polymer film is used as a support for making a polyimide film, and after the thermoplastic polymer film and the polyimide film are simultaneously stretched, the stretched polyimide film is The thermoplastic polymer film is peeled off, thereby preventing scratches on the polyimide film especially when stretching in the MD direction, and a higher-quality colorless and highly transparent polyimide film can be obtained.

前述聚醯亞胺膜從50℃至200℃之間的平均線膨脹係數(CTE)較佳為40ppm/K以下。再佳為35ppm/K以下。又較佳為-20ppm/K以上,再佳為-10 ppm/K以上。若CTE在前述範圍內,則可較小地保持與一般支撐體(無機基板)支線膨脹係數的差,即使對其實施加熱的製程,亦可避免聚醯亞胺膜與無機基板剝離或連同支撐體一起翹曲。此處CTE係對於溫度呈現可逆性伸縮的因子。另外,前述聚醯亞胺膜之CTE的測量方法係根據實施例記載的方法。The average coefficient of linear expansion (CTE) of the aforementioned polyimide film from 50° C. to 200° C. is preferably below 40 ppm/K. More preferably, it is 35 ppm/K or less. More preferably, it is -20 ppm/K or more, and even more preferably, it is -10 ppm/K or more. If the CTE is within the aforementioned range, the difference between the branch linear expansion coefficient and the general support (inorganic substrate) can be kept relatively small, even if it is subjected to a heating process, the polyimide film can be prevented from peeling off from the inorganic substrate or together with the support The body warps together. Here, CTE is a factor that exhibits reversible stretching with respect to temperature. In addition, the measurement method of the CTE of the aforementioned polyimide film is based on the method described in the examples.

前述聚醯亞胺膜可含有填充物。作為填充物,並無特別限定,可列舉:二氧化矽、碳、陶瓷等,其中較佳為二氧化矽。此等填充物可單獨使用,亦可併用2種以上。藉由添加填充物,可賦予聚醯亞胺膜表面突起,藉此聚醯亞胺膜表面的平滑性變高。又,藉由添加填充物,可壓低聚醯亞胺膜的CTE及Rth。填充物的平均粒徑較佳為1nm以上,更佳為5nm以上。又,較佳為1μm以下,更佳為500nm以下,再佳為100nm以下。The aforementioned polyimide film may contain a filler. The filler is not particularly limited, and examples thereof include silicon dioxide, carbon, and ceramics, among which silicon dioxide is preferable. These fillers may be used alone or in combination of two or more. By adding the filler, protrusions can be imparted to the surface of the polyimide film, thereby improving the smoothness of the surface of the polyimide film. Also, by adding fillers, the CTE and Rth of the polyimide film can be lowered. The average particle diameter of the filler is preferably at least 1 nm, more preferably at least 5 nm. Also, it is preferably not more than 1 μm, more preferably not more than 500 nm, and still more preferably not more than 100 nm.

聚醯亞胺膜中的填充物之含量較佳係因應填充物的平均粒徑調整。填充物的粒徑為30nm以上的情況,較佳為0.01~5質量%,更佳為0.01~3質量%,再佳為0.01~2質量%,特佳為0.01~1質量%。另一方面,平均粒徑小於30nm的情況,較佳為0.01~50質量%,更佳為0.01~40質量%,再佳為0.01~30質量%,特佳為0.01~20質量%。藉由在上述範圍內調整含量,可在不損及聚醯亞胺膜之透明性的情況下,高度地保持聚醯亞胺膜表面的平滑性,而且可壓低聚醯亞胺膜的CTE及Rth。The content of the filler in the polyimide film is preferably adjusted according to the average particle size of the filler. When the particle size of the filler is 30 nm or more, it is preferably 0.01 to 5% by mass, more preferably 0.01 to 3% by mass, still more preferably 0.01 to 2% by mass, and most preferably 0.01 to 1% by mass. On the other hand, when the average particle diameter is less than 30 nm, it is preferably 0.01 to 50% by mass, more preferably 0.01 to 40% by mass, further preferably 0.01 to 30% by mass, and particularly preferably 0.01 to 20% by mass. By adjusting the content within the above range, the smoothness of the surface of the polyimide film can be maintained at a high degree without impairing the transparency of the polyimide film, and the CTE and CTE of the polyimide film can be lowered. Rth.

作為在聚醯亞胺膜中添加填充物的方法,並無特別限定,可列舉:在製作前述聚醯胺酸(聚醯亞胺前驅物)溶液時或製作之後以粉體進行添加的方法、以填充物/溶劑的形態(漿液)添加的方法等,其中特佳為以漿液添加的方法。作為漿液,並無特別限定,可列舉:平均粒徑10nm的二氧化矽以20質量%的濃度分散於N,N-二甲基乙醯胺(DMAC)而成的漿液(例如,日產化學工業製「Snowtex(註冊商標)DMAC-ST」、平均粒徑80nm的二氧化矽以20質量%的濃度分散於N,N-二甲基乙醯胺(DMAC)而成的漿液(例如,日產化學工業製「Snowtex(註冊商標)DMAC-ST-ZL」)、平均粒徑10nm的二氧化矽以20質量%的濃度分散於N-甲基吡咯啶酮(NMP)而成的漿液(例如,日產化學工業製「Snowtex(註冊商標)NMP-ST」等。 前述聚醯亞胺膜可含有著色劑。例如,藉由在淡黃色的聚醯亞胺膜中混合藍色的著色劑,可降低膜的Y.I.。 作為著色劑,可列舉例如:有機顏料、無機顏料或染料,為了提升著色膜的耐熱性、可靠度及耐光性,較佳為有機顏料、無機顏料。 作為有機顏料,可列舉例如:吡咯并吡咯二酮(diketopyrrolopyrrole)系顏料;偶氮、雙偶氮、多偶氮等偶氮系顏料;銅酞青、鹵化銅酞青、無金屬酞青等酞青系顏料;胺基蒽醌、二胺基二蒽醌、蒽嘧啶、黃士酮、蒽嵌蒽醌(anthanthrone)、陰丹士林、皮蒽酮、紫蒽酮等蒽醌系顏料;喹吖酮系顏料;二㗁𠯤系顏料;紫環酮(perinone)系顏料;苝系顏料;硫靛系顏料;異吲哚啉系顏料;異吲哚啉酮系顏料;喹啉黃(quinophthalone)系顏料;士林(threne)系顏料;金屬錯合物系顏料等。 作為無機顏料,可列舉例如:氧化鈦、鋅華、硫化鋅、鉛白、碳酸鈣、沉澱性硫酸鋇、白碳、氧化鋁白、高嶺石黏土、滑石、皂土、黑色氧化鐵、鎘紅、紅丹、鉬紅、鉬橙、鉻朱紅、黃鉛、鎘黃、黃色氧化鐵、噻唑黃(titan yellow)、氧化鉻、鉻綠、鈦鈷綠、鈷綠、鈷鉻綠、維多利亞綠、群青、普魯士藍、鈷藍、天藍、鈷矽藍、鈷鋅矽藍、錳紫、鈷紫等。 作為染料,可列舉例如:偶氮染料、蒽醌染料、縮合多環芳香族羰基染料、靛藍染料、碳陽離子染料、酞青染料、次甲基染料、聚次甲基染料等。 The method of adding the filler to the polyimide film is not particularly limited, and examples thereof include a method of adding the filler as a powder during or after the preparation of the aforementioned polyamic acid (polyimide precursor) solution, The method of adding in the form of a filler/solvent (slurry), etc. Among them, the method of adding in a slurry is particularly preferable. The slurry is not particularly limited, and examples include: a slurry in which silicon dioxide with an average particle diameter of 10 nm is dispersed in N,N-dimethylacetamide (DMAC) at a concentration of 20% by mass (for example, Nissan Chemical Industry Co., Ltd. "Snowtex (registered trademark) DMAC-ST", a slurry in which silicon dioxide with an average particle diameter of 80 nm is dispersed in N,N-dimethylacetamide (DMAC) at a concentration of 20% by mass (for example, Nissan Chemical Industrial "Snowtex (registered trademark) DMAC-ST-ZL"), a slurry in which silicon dioxide with an average particle size of 10 nm is dispersed in N-methylpyrrolidone (NMP) at a concentration of 20% by mass (for example, Nissan "Snowtex (registered trademark) NMP-ST" manufactured by Chemical Industry, etc. The aforementioned polyimide film may contain a colorant. For example, by mixing a blue colorant in a pale yellow polyimide film, the Y.I. of the film can be lowered. Examples of the coloring agent include organic pigments, inorganic pigments, and dyes, and organic pigments and inorganic pigments are preferred in order to improve the heat resistance, reliability, and light resistance of the colored film. Examples of organic pigments include: diketopyrrolopyrrole (diketopyrrolopyrrole) pigments; azo pigments such as azo, disazo, and polyazo; Cyan pigments; anthraquinone pigments such as aminoanthraquinone, diaminodianthraquinone, anthrapyrimidine, flavone, anthanthrone (anthanthrone), indanthrene, pyranthrone, and purple anthrone; quinone Acrone series pigments; two 㗁𠯤 series pigments; perinone series pigments; perylene series pigments; sulfur indigo series pigments; isoindoline series pigments; isoindolinone series pigments; quinophthalone yellow (quinophthalone) Department of pigments; Shihlin (threne) pigments; metal complex pigments, etc. Examples of inorganic pigments include titanium oxide, zinc white, zinc sulfide, lead white, calcium carbonate, precipitated barium sulfate, white carbon, alumina white, kaolinite clay, talc, bentonite, black iron oxide, cadmium red , red lead, molybdenum red, molybdenum orange, chrome vermilion, yellow lead, cadmium yellow, yellow iron oxide, thiazole yellow (titan yellow), chromium oxide, chrome green, titanium cobalt green, cobalt green, cobalt chrome green, Victoria green, Ultramarine Blue, Prussian Blue, Cobalt Blue, Sky Blue, Cobalt Silicon Blue, Cobalt Zinc Silicon Blue, Manganese Violet, Cobalt Violet, etc. Examples of dyes include azo dyes, anthraquinone dyes, condensed polycyclic aromatic carbonyl dyes, indigo dyes, carbocation dyes, phthalocyanine dyes, methine dyes, and polymethine dyes.

前述聚醯亞胺膜的拉伸破裂強度較佳為60MPa以上,更佳為120MPa以上,再佳為160MPa以上。拉伸破裂強度的上限並無特別限制,但事實上小於1000MPa左右。若前述拉伸破裂強度在60MPa以上,則從無機基板剝離時,可防止前述聚醯亞胺膜破裂。另外,前述聚醯亞胺膜的拉伸破裂強度的測量方法,係根據實施例記載的方法。另外,使用澆鑄塗抹機(casting applicator)塗布於玻璃基板上再進行製作的情況中,將澆鑄塗抹機塗布中平行方向與垂直方向的正交兩方向分別設為(MD方向)、(TD方向)。以下拉伸破裂伸度、拉伸彈性係數亦相同。The tensile rupture strength of the aforementioned polyimide film is preferably at least 60 MPa, more preferably at least 120 MPa, even more preferably at least 160 MPa. The upper limit of the tensile rupture strength is not particularly limited, but it is actually less than about 1000 MPa. When the tensile rupture strength is at least 60 MPa, the polyimide film can be prevented from being broken when peeled from the inorganic substrate. In addition, the measuring method of the tensile rupture strength of the said polyimide film is based on the method described in an Example. In addition, when using a casting applicator (casting applicator) to apply on a glass substrate and then produce it, let the two directions perpendicular to the parallel direction and the vertical direction in the casting applicator application be respectively (MD direction) and (TD direction) . The following tensile elongation at break and tensile modulus of elasticity are also the same.

前述聚醯亞胺膜的拉伸破裂伸度較佳為1%以上,更佳為5%以上,再佳為10%以上。若前述拉伸破裂伸度在5%以上,則操作性優良。另外,前述聚醯亞胺膜的拉伸破裂伸度的測量方法係根據實施例記載之方法。The tensile elongation at break of the aforementioned polyimide film is preferably at least 1%, more preferably at least 5%, and even more preferably at least 10%. When the aforementioned tensile elongation at break is 5% or more, the handleability is excellent. In addition, the measurement method of the tensile elongation at break of the aforementioned polyimide film is based on the method described in the examples.

前述聚醯亞胺膜的拉伸彈性係數較佳為2GPa以上,更佳為3GPa以上,再佳為4GPa以上。前述拉伸彈性係數若在3GPa以上,則在從無機基板剝離時,前述聚醯亞胺膜的拉伸變形少,操作性優良。前述拉伸彈性係數較佳為20GPa以下,更佳為12GPa以下,再佳為10GPa以下。若前述拉伸彈性係數在20GPa以下,則前述聚醯亞胺膜可作為可撓性膜使用。另外,前述聚醯亞胺膜的拉伸彈性係數的測量方法係根據實施例記載的方法。The tensile modulus of the aforementioned polyimide film is preferably above 2 GPa, more preferably above 3 GPa, even more preferably above 4 GPa. When the tensile modulus of elasticity is 3 GPa or more, the polyimide film exhibits little tensile deformation when peeled from the inorganic substrate and is excellent in handleability. The aforementioned tensile modulus of elasticity is preferably 20 GPa or less, more preferably 12 GPa or less, even more preferably 10 GPa or less. If the above-mentioned tensile modulus of elasticity is 20 GPa or less, the above-mentioned polyimide film can be used as a flexible film. In addition, the measuring method of the tensile elastic coefficient of the aforementioned polyimide film is based on the method described in the examples.

前述聚醯亞胺膜,其拉伸彈性係數維持在一定程度的同時韌性提升,因此相較於以往的聚醯亞胺膜,作為拉伸強度與伸度之乘積的抗張積有所改善。亦即,本發明的聚醯亞胺膜在拉伸試驗中的抗張積較佳為1,000MPa・%以上,更佳為1,200MPa・%以上。上限並未特別設定,但從薄膜之操作性的觀點來看,拉伸試驗中的抗張積較佳為10,000MPa・%以下。The above-mentioned polyimide film maintains a certain degree of tensile elastic coefficient while improving toughness, so compared with the conventional polyimide film, the tensile product, which is the product of tensile strength and elongation, is improved. That is, the tensile product of the polyimide film of the present invention in the tensile test is preferably at least 1,000 MPa·%, more preferably at least 1,200 MPa·%. The upper limit is not particularly set, but from the viewpoint of the handleability of the film, the tensile product in the tensile test is preferably 10,000 MPa·% or less.

前述聚醯亞胺膜,較佳係其製造時作成寬度300mm以上、長度10m以上的長條聚醯亞胺膜而能夠以捲繞的形態得到,更佳係捲繞在芯上之捲筒狀的聚醯亞胺膜之形態。若將前述聚醯亞胺膜捲繞成捲筒狀,則容易以捲繞成捲筒狀的聚醯亞胺膜這樣的形態運送。The aforementioned polyimide film is preferably manufactured as a long polyimide film having a width of 300 mm or more and a length of 10 m or more and can be obtained in the form of a roll, more preferably in the form of a roll wound on a core. Morphology of the polyimide film. If the aforementioned polyimide film is wound into a roll, it is easy to transport in the form of the polyimide film wound into a roll.

前述聚醯亞胺膜中,為了確保處理性及生產性,較佳係在聚醯亞胺膜中添加/含有0.03~3質量%左右的粒徑10~1000nm左右的滑材(粒子),賦予聚醯亞胺膜表面微細的凹凸以確保平滑性。In the aforementioned polyimide film, in order to ensure handleability and productivity, it is preferable to add/contain 0.03 to 3% by mass of a slippery material (particle) with a particle diameter of about 10 to 1000 nm in the polyimide film to impart The surface of the polyimide film is finely uneven to ensure smoothness.

又,聚醯亞胺膜具有2層以上之積層構成時,若各層單獨之CTE的差不同,則會成為翹曲的原因,因而不佳。因此與無機基板接觸之第1聚醯亞胺膜層和不與前述無機基板接觸而是與前述第1聚醯亞胺膜鄰接的第2聚醯亞胺膜層的CTE差較佳為40ppm/K以下,更佳為30ppm/K以下,再佳為15ppm/K以下。特別是前述第2聚醯亞胺膜之中,膜厚最厚的層較佳係在前述範圍內。又,若聚醯亞胺膜在膜厚方向上成為對稱結構則不易發生翹曲而較佳。In addition, when the polyimide film has a laminated structure of two or more layers, if the difference in CTE of each layer is different, it will cause warping, which is not preferable. Therefore, the CTE difference between the 1st polyimide film layer in contact with the inorganic substrate and the 2nd polyimide film layer not in contact with the aforementioned inorganic substrate but adjacent to the 1st polyimide film is preferably 40ppm/ K or less, more preferably 30 ppm/K or less, even more preferably 15 ppm/K or less. In particular, among the aforementioned second polyimide films, the layer with the thickest film thickness is preferably within the aforementioned range. Moreover, it is preferable that the polyimide film has a symmetrical structure in the film thickness direction, since warping is less likely to occur.

前述2層以上的積層構成之聚醯亞胺膜中,特別是與前述無機基板接觸的第1聚醯亞胺膜層和與前述第1聚醯亞胺膜層鄰接的第2聚醯亞胺膜層(以下亦僅稱為「第2聚醯亞胺膜層))之界面的混合厚度只要小於第1聚醯亞胺膜層的單層厚度與第2聚醯亞胺膜層的單層厚度的和即可,並未特別限定,較佳為第1聚醯亞胺膜層之單層厚度與第2聚醯亞胺膜層之單層厚度的和的99%以下,更佳為80%以下,再佳為50%以下。又,關於下限並未特別限定,工業上只要在10nm以上則無問題,在20nm以上亦無妨。又,各層的功能明顯不同,在必須不互相抵消而充分發揮各功能的情況中,較佳係將混合區域在各層中所占的比例壓在50%以下,更佳係壓在30%以下,再佳係壓在10%以下。In the above-mentioned polyimide film composed of two or more layers, especially the first polyimide film layer in contact with the above-mentioned inorganic substrate and the second polyimide film layer adjacent to the above-mentioned first polyimide film layer The mixed thickness of the interface of the film layer (hereinafter also referred to as "the second polyimide film layer) only needs to be less than the single-layer thickness of the first polyimide film layer and the single-layer thickness of the second polyimide film layer. The sum of the thicknesses is sufficient, and is not particularly limited, preferably less than 99% of the sum of the single-layer thickness of the first polyimide film layer and the single-layer thickness of the second polyimide film layer, more preferably 80% or less. % or less, preferably less than 50%. Also, the lower limit is not particularly limited. In industry, there is no problem as long as it is more than 10nm, and there is no problem if it is more than 20nm. Also, the functions of each layer are obviously different, and it must be sufficient without canceling each other. In the case of performing each function, it is preferable to suppress the proportion of the mixed region in each layer to 50% or less, more preferably to 30% or less, and most preferably to 10% or less.

形成混合少之層的手段並無特別限定,相較於同時以溶液製膜製作第1聚醯亞胺膜層與第2聚醯亞胺膜層的2層,較佳係先製作第1聚醯亞胺膜層或第2聚醯亞胺膜層任一層,經過加熱步驟後再製作下一層。加熱步驟包含中途階段、結束之情況兩者。加熱步驟結束再製作下一層雖可形成混合少者,但完成的薄膜表面大多已失去反應性,表面上的官能基少,可能導至2個層的接著力弱而在實用上發生問題。因此,即使在混合少的情況中,亦期望是發生10nm以上混合的界面。The means for forming a layer with little mixing is not particularly limited. Compared with making the first polyimide film layer and the second polyimide film layer by solution film formation at the same time, it is better to make the first polyimide film layer first. Any one layer of the imide film layer or the second polyimide film layer is made into the next layer after a heating step. The heating step includes both the intermediate stage and the end state. After the heating step is completed, the next layer can be formed with less mixing, but the surface of the finished film has mostly lost its reactivity, and there are few functional groups on the surface, which may lead to weak adhesion between the two layers and cause practical problems. Therefore, even in the case of little mixing, it is desirable to have an interface where mixing of 10 nm or more occurs.

藉由使物性不同的材料(樹脂)形成2層構成的膜,亦可製作同時具有各種特性的膜。再者,藉由積層為在厚度方向上對稱的結構(例如,第1聚醯亞胺膜層/第2聚醯亞胺膜層/第1聚醯亞胺膜層),膜整體的CTE的平衡變得良好,可形成不易發生翹曲的膜。又,據認為藉由將任一層作為可吸收紫外光或紅外光的層,可使其在分光特性上具有特徵,並且可藉由折射率不同的層來控制光的射入與射出。又,藉由在第1聚醯亞胺膜層中添加滑劑,膜整體的光學物性及熱物性可保持與第2聚醯亞胺膜層類似的特性,並且可提升膜的平滑性。此情況中,第1聚醯亞胺膜層與第2聚醯亞胺膜層的高分子組成可相同亦可不同。By forming a film composed of two layers of materials (resins) having different physical properties, it is also possible to produce a film having various properties at the same time. Furthermore, by laminating into a symmetrical structure in the thickness direction (for example, the first polyimide film layer/the second polyimide film layer/the first polyimide film layer), the CTE of the film as a whole The balance becomes good, and a film which does not easily warp can be formed. In addition, it is considered that by using either layer as a layer capable of absorbing ultraviolet light or infrared light, it can be characterized in terms of spectral characteristics, and it is considered that the entrance and exit of light can be controlled by layers with different refractive indices. In addition, by adding a slip agent to the first polyimide film layer, the optical and thermal properties of the entire film can be kept similar to those of the second polyimide film layer, and the smoothness of the film can be improved. In this case, the polymer compositions of the first polyimide film layer and the second polyimide film layer may be the same or different.

作為製作2層以上的層構成之膜的手段,考量了藉由可同時吐出2層以上的T字模所進行的同時塗布、塗布1層後再塗布下一層的逐次塗布、塗布1層後進行乾燥再塗布下一層的方法、結束1層的薄膜化之後再塗布下一層的方法、或是藉由加入熱塑性的層而以加熱疊層進行多層化等各種方法,本專利中可適當採用既有的各種塗布方法、多層化手法。As a means of producing a film composed of two or more layers, simultaneous coating by a T-die that can discharge two or more layers at the same time, sequential coating that coats one layer and then coats the next layer, and drying after coating one layer is considered. Various methods such as the method of coating the next layer, the method of coating the next layer after finishing the thin film of one layer, or adding a thermoplastic layer to heat lamination for multilayering, etc., can be appropriately used in this patent. Various coating methods and multilayering methods.

<積層體> 本發明的積層體包含上述聚醯亞胺膜與無機基板。前述積層體中,聚醯亞胺膜由2層以上所構成的情況,只要至少1層含有本發明的聚醯亞胺即可。又,除了聚醯亞胺膜之外,亦可積層聚醯亞胺膜以外的透明高耐熱膜。 <Laminates> The laminate of the present invention includes the above-mentioned polyimide film and an inorganic substrate. In the aforementioned laminate, when the polyimide film is composed of two or more layers, at least one layer only needs to contain the polyimide of the present invention. Moreover, in addition to the polyimide film, a transparent high heat-resistant film other than the polyimide film may be laminated.

作為透明高耐熱膜,可列舉:PET、PEN、PVC、丙烯酸、聚苯乙烯、聚碳酸酯等。透明高耐熱膜可用於聚醯亞胺膜的任一側。As a transparent high heat-resistant film, PET, PEN, PVC, acrylic, polystyrene, polycarbonate, etc. are mentioned. Transparent high heat resistant film can be used on either side of the polyimide film.

聚醯亞胺膜與無機基板之間亦可更包含矽烷偶合劑層、接著劑層、黏著劑層等。又,聚醯亞胺膜的表面上亦可含有配線層、導電膜層、金屬層等。A silane coupling agent layer, an adhesive layer, an adhesive layer, etc. may be further included between the polyimide film and the inorganic substrate. In addition, the surface of the polyimide film may contain a wiring layer, a conductive film layer, a metal layer, and the like.

<無機基板> 作為前述無機基板,只要是可作為包含無機物之基板使用的板狀物即可,可列舉例如:以玻璃板、陶瓷板、半導體晶圓、金屬等為主體者,及作為此等玻璃板、陶瓷板、半導體晶圓、金屬的複合體,係將此等積層而成者、其中分散有此等者、其中含有此等之纖維者等。 <Inorganic substrate> As the above-mentioned inorganic substrate, as long as it is a plate-shaped object that can be used as a substrate containing inorganic substances, for example: those mainly composed of glass plates, ceramic plates, semiconductor wafers, metals, etc., and such glass plates, ceramics, etc. Boards, semiconductor wafers, and metal composites are those that are laminated, those that are dispersed therein, those that contain these fibers, etc.

作為前述玻璃板,包含石英玻璃、高矽酸玻璃(96%二氧化矽)、鈉鈣玻璃、鉛玻璃、鋁硼矽酸玻璃、硼矽酸玻璃(PYREX(註冊商標))、硼矽酸玻璃(無鹼)、硼酸酸玻璃(microsheet)、鋁矽酸鹽玻璃等。此等之中,期望為線膨脹係數5ppm/K以下者,若為市售產品,則期望為作為液晶用玻璃的Corning公司製的「Corning(註冊商標)7059」及「Corning(註冊商標)1737」、「EAGLE」、旭硝子公司製的「AN100」、日本電氣硝子公司製的「OA10、OA11G」、SCHOTT公司製的「AF32」等。The aforementioned glass plate includes quartz glass, high silicate glass (96% silica), soda lime glass, lead glass, aluminoborosilicate glass, borosilicate glass (PYREX (registered trademark)), borosilicate glass (alkali-free), boric acid glass (microsheet), aluminosilicate glass, etc. Among them, those with a linear expansion coefficient of 5 ppm/K or less are desirable, and if they are commercially available, "Corning (registered trademark) 7059" and "Corning (registered trademark) 1737" manufactured by Corning Co., Ltd., which are glasses for liquid crystals, are desirable. ", "EAGLE", "AN100" manufactured by Asahi Glass Co., Ltd., "OA10, OA11G" manufactured by NEC Glass Co., Ltd., "AF32" manufactured by SCHOTT Corporation, etc.

作為前述半導體晶圓,並無特別限定,可列舉:矽晶圓、鍺、矽-鍺、鎵-砷、鋁-鎵-銦、氮-磷-砷-銻、SiC、InP(銦磷)、InGaAs、GaInNAs、LT、LN、ZnO(氧化鋅)或CdTe(鎘碲)、ZnSe(硒化鋅)等晶圓。其中,使用之晶圓較佳為矽晶圓,特佳為尺寸8英吋以上的鏡面研磨矽晶圓。The aforementioned semiconductor wafer is not particularly limited, and examples thereof include silicon wafers, germanium, silicon-germanium, gallium-arsenic, aluminum-gallium-indium, nitrogen-phosphorus-arsenic-antimony, SiC, InP (indium-phosphorus), InGaAs, GaInNAs, LT, LN, ZnO (zinc oxide) or CdTe (cadmium tellurium), ZnSe (zinc selenide) and other wafers. Among them, the wafer used is preferably a silicon wafer, especially a mirror-polished silicon wafer with a size of 8 inches or more.

作為前述金屬,包含W、Mo、Pt、Fe、Ni、Au之類的單一元素金屬、以及英高鎳、蒙鎳合金(monel)、鎳蒙合金(nimonic)、碳銅、Fe-Ni系恆範合金、超恆範合金之類的合金等。又,此等金屬亦包含加成了其他金屬層、陶瓷層而成的多層金屬板。此情況中,若與附加層的整體線膨脹係數(CTE)低,則亦可將Cu、Al等用於主金屬層。作為附加金屬層使用的金屬,只要可使與高耐熱膜的密合性穩固且具有不會擴散、耐化學藥品性及耐熱性良好等特性則無限定,可列舉:含有Cr、Ni、TiN、Mo的Cu等作為合適的例子。The aforementioned metals include single-element metals such as W, Mo, Pt, Fe, Ni, and Au, as well as Inconel, monel, nimonic, carbon copper, and Fe-Ni-based constants. Alloys such as fan alloys, super constant fan alloys, etc. In addition, these metals also include multilayer metal plates in which other metal layers and ceramic layers are added. In this case, Cu, Al, etc. may also be used for the main metal layer if the overall coefficient of linear expansion (CTE) with the additional layer is low. The metal used as the additional metal layer is not limited as long as it can securely adhere to the high heat-resistant film and has characteristics such as no diffusion, good chemical resistance, and heat resistance. Examples include: Cr, Ni, TiN, Mo, Cu, etc. are given as suitable examples.

作為本發明中的陶瓷板,包含Al 2O 3、莫來石(Mullite)、AlN、SiC、結晶化玻璃、菫青石(Cordierite)、鋰輝石(Spodumene)、Pb-BSG+CaZrO 3+Al 2O 3、Crystallized glass+Al 2O 3、Crystallized Ca-BSG、BSG+Quartz、BSG+ Quartz, BSG+ Al 2O 3、Pb-BSG+Al 2O 3、玻璃-陶瓷(Glass-ceramic)、微晶玻璃(ZERODUR)材料等基板用陶瓷。 The ceramic plate in the present invention includes Al 2 O 3 , mullite, AlN, SiC, crystallized glass, cordierite, spodumene, Pb-BSG+CaZrO 3 +Al 2 O 3 , Crystallized glass+Al 2 O 3 , Crystallized Ca-BSG, BSG+Quartz, BSG+ Quartz, BSG+ Al 2 O 3 , Pb-BSG+Al 2 O 3 , Glass-ceramic, glass-ceramic (ZERODUR) materials and other substrate ceramics.

前述無機基板的平面部分宜充分平坦。具體而言,表面粗糙度的P-V值較佳為50nm以下,更佳為20nm以下,再佳為5nm以下。若比其粗糙,則可能導致聚醯亞胺膜層與無機基板的剝離強度不充分。The planar portion of the aforementioned inorganic substrate is preferably sufficiently flat. Specifically, the P-V value of the surface roughness is preferably less than 50 nm, more preferably less than 20 nm, and even more preferably less than 5 nm. If it is rougher than this, the peel strength between the polyimide film layer and the inorganic substrate may be insufficient.

前述無機基板的厚度並無特別限制,但從操作性的觀點來看,較佳為10mm以下的厚度,更佳為3mm以下,再佳為1.3mm以下。關於厚度的下限並無特別限制,但較佳為0.07mm以上,更佳為0.15mm以上,再佳為0.3mm以上。若太薄則容易破損而難以操作。又若太厚則變重而難以操作。The thickness of the above-mentioned inorganic substrate is not particularly limited, but from the viewpoint of handling, the thickness is preferably 10 mm or less, more preferably 3 mm or less, and still more preferably 1.3 mm or less. The lower limit of the thickness is not particularly limited, but is preferably at least 0.07 mm, more preferably at least 0.15 mm, and even more preferably at least 0.3 mm. If it is too thin, it will be easily damaged and difficult to handle. And if it is too thick, it becomes heavy and difficult to handle.

<積層體的形成> 作為本發明的積層體,較佳係實質上不使用接著劑而將前述聚醯亞胺膜與前述無機基板積層而成者。聚醯亞胺膜具有2層以上之積層構成時,較佳係含有與無機基板接觸的前述第1聚醯亞胺膜和不與前述無機基板接觸而是與前述第1聚醯亞胺膜層鄰接的第2聚醯亞胺膜層者。前述第2聚醯亞胺膜亦可進一步具有多層積層構成。又,在積層體的厚度方向上,兩端部為無機基板的構成(例如,無機基板/第1聚醯亞胺膜/第2聚醯亞胺膜/第1聚醯亞胺膜/無機基板)亦無妨。此情況中,兩端部中的聚醯亞胺膜與無機基板實質上未使用接著劑。 <Formation of laminate> As the laminated body of this invention, what laminated|stacked the said polyimide film and the said inorganic board|substrate substantially without using an adhesive agent is preferable. When the polyimide film has a laminated structure of two or more layers, it is preferable to include the aforementioned first polyimide film in contact with the inorganic substrate and the aforementioned first polyimide film layer that is not in contact with the inorganic substrate but is in contact with the aforementioned first polyimide film. Adjacent to the second polyimide film layer. The aforementioned second polyimide film may further have a multilayer structure. Also, in the thickness direction of the laminate, both ends are constituted by inorganic substrates (for example, inorganic substrate/first polyimide film/second polyimide film/first polyimide film/inorganic substrate ) is fine. In this case, substantially no adhesive is used between the polyimide film and the inorganic substrate at both ends.

積層體的形成係在製作聚醯亞胺膜後與無機基板積層的方法、或是將聚醯亞胺膜直接或隔著其他層形成於無機基板上的方法中之任一者。隔著其他層形成時,較佳係使矽烷偶合劑層等的易剝離層介於其之間。又,為了控制在適當的剝離力,亦可對於無機基板進行表面處理。The formation of the laminate is either a method of laminating the polyimide film on the inorganic substrate after fabrication, or a method of forming the polyimide film on the inorganic substrate directly or through another layer. When forming through other layers, it is preferable to interpose easily peelable layers, such as a silane coupling agent layer, in between. In addition, in order to control the peeling force to an appropriate level, surface treatment may be performed on the inorganic substrate.

積層體的形狀並無特別限定,可為正方形,為長方形亦無妨。較佳為長方形,長邊的長度較佳為300mm以上,更佳為500mm以上,再佳為1000mm以上。上限並無特別限定,期望可替換工業上使用的尺寸、材質之基板。只要在20000mm以下即為充分,10000mm以下亦無妨。The shape of the laminate is not particularly limited, and may be square or rectangular. It is preferably rectangular, and the length of the long side is preferably at least 300 mm, more preferably at least 500 mm, and even more preferably at least 1000 mm. The upper limit is not particularly limited, and it is expected that substrates of industrially used sizes and materials can be replaced. As long as it is 20000 mm or less, it is sufficient, and 10000 mm or less is fine.

本發明的積層體,300℃加熱時的翹曲量較佳為10mm以下。為了使耐熱性良好,更佳為8mm以下,再佳為6mm以下。翹曲量的下限並無特別限定,工業上只要在0.01mm以上即為充分,0.1mm以上亦無妨。In the laminate of the present invention, the amount of warpage when heated at 300° C. is preferably 10 mm or less. In order to make heat resistance good, it is more preferably 8 mm or less, still more preferably 6 mm or less. The lower limit of the amount of warpage is not particularly limited, and it is sufficient industrially if it is 0.01 mm or more, and 0.1 mm or more is also acceptable.

<接著劑> 無機基板與聚醯亞胺膜之間較佳係實質上未隔著接著劑層。此處本發明中所述的接著劑層,係指以質量比計使Si(矽)的成分小於10%(小於10質量%)者。又,實質上未使用(未隔著),係指介於無機基板與聚醯亞胺膜之間的接著劑層之厚度較佳為0.4μm以下,更佳為0.1μm以下,再佳為0.05μm以下,特佳為0.03μm以下,最佳為0μm。 <Adhesive> It is preferable that the adhesive layer is not substantially interposed between the inorganic substrate and the polyimide film. Here, the adhesive layer in the present invention means that the Si (silicon) component is less than 10% (less than 10% by mass) in terms of mass ratio. In addition, the term “not used substantially” means that the thickness of the adhesive layer between the inorganic substrate and the polyimide film is preferably 0.4 μm or less, more preferably 0.1 μm or less, and even more preferably 0.05 μm or less. μm or less, particularly preferably 0.03 μm or less, most preferably 0 μm.

<矽烷偶合劑(SCA)> 積層體中,較佳係在聚醯亞胺膜與無機基板之間具有矽烷偶合劑的層。在本發明中,所謂的矽烷偶合劑係指含有10質量%以上之Si(矽)成分的化合物。再佳為結構中具有烷氧基者。又,期望不具有甲基。藉由使用矽烷偶合劑層,可使聚醯亞胺膜與無機基板的中間層變薄,因此可呈現下述效果:在加熱中的排氣成分少,在濕式製程中亦不易溶出,即使發生溶出亦僅有微量。矽烷偶合劑中,為了提升耐熱性,較佳係大量含有氧化矽成分,特佳為具有400℃左右之溫度的耐熱性者。矽烷偶合劑層的厚度較佳係小於0.2μm。作為用作可撓式電子元件的範圍,較佳為100nm以下(0.1μm以下),更期望為50nm以下,再期望為10nm。若以一般方法製作,則在0.10μm以下左右。又,在期望矽烷偶合劑極少的製程中,亦可以5nm以下使用。若在1nm以下,則有導致剝離強度降低或出現局部未附著之部分的疑慮,故期望為1nm以上。 <Silane coupling agent (SCA)> In the laminate, a layer having a silane coupling agent between the polyimide film and the inorganic substrate is preferable. In the present invention, the so-called silane coupling agent refers to a compound containing 10% by mass or more of Si (silicon) component. More preferably, it has an alkoxy group in the structure. Also, it is desirable not to have a methyl group. By using the silane coupling agent layer, the intermediate layer between the polyimide film and the inorganic substrate can be thinned, so the following effects can be exhibited: there are few outgassing components during heating, and it is not easy to dissolve in the wet process, even if There is only a small amount of dissolution. Among the silane coupling agents, in order to improve heat resistance, it is preferable to contain a large amount of silicon oxide component, and it is particularly preferable to have heat resistance at a temperature of about 400°C. The thickness of the silane coupling agent layer is preferably less than 0.2 μm. The range used as a flexible electronic element is preferably 100 nm or less (0.1 μm or less), more desirably 50 nm or less, and still more desirably 10 nm. If produced by a general method, it is about 0.10 μm or less. In addition, it can also be used below 5nm in the process where very little silane coupling agent is expected. If it is 1 nm or less, there is a possibility that the peeling strength will decrease or a partially unattached part will appear, so it is desirably 1 nm or more.

本發明中的矽烷偶合劑並未特別限定,較佳為具有胺基或環氧基者。作為矽烷偶合劑的具體例,可列舉:N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧基矽基-N-(1,3-二甲基亞丁基)丙胺、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷乙烯基三氯矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、對苯乙烯基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、N-(乙烯基苄基)-2-胺基乙基-3-胺基丙基三甲氧基矽烷鹽酸鹽、3-醯脲丙基三乙氧基矽烷、3-氯丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、3-巰基丙基三甲氧基矽烷、雙(三乙氧基矽基丙基)四硫醚、3-異氰酸酯丙基三乙氧基矽烷、參-(3-三甲氧基矽基丙基)三聚異氰酸酯、氯甲基苯乙基三甲氧基矽烷、氯甲基三甲氧基矽烷等。其中作為較佳者,可列舉:N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧基矽基-N-(1,3-二甲基亞丁基)丙胺、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、胺基苯基三甲氧基矽烷、胺基苯乙基三甲氧基矽烷、胺基苯胺基甲基苯乙基三甲氧基矽烷等。製程中要求耐熱性時,期望是以芳香族將Si與胺基等之間連結者。The silane coupling agent in the present invention is not particularly limited, and preferably has an amino group or an epoxy group. Specific examples of silane coupling agents include: N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-amine N-2-(aminoethyl)-3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane Oxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylene)propylamine, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-cyclo Oxypropoxypropyltrimethoxysilane, 3-Glycidoxypropylmethyldiethoxysilane, 3-Glycidoxypropyltriethoxysilane, Vinyltrichlorosilane, Vinyl Trimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-epoxycyclohexyltrimethoxysilane, Propoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane Methoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane Oxysilane, 3-acryloxypropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, N-(vinylbenzyl)-2-aminoethyl-3 -Aminopropyltrimethoxysilane hydrochloride, 3-ureidopropyltriethoxysilane, 3-chloropropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3- Mercaptopropyltrimethoxysilane, bis(triethoxysilylpropyl)tetrasulfide, 3-isocyanatopropyltriethoxysilane, ginseng-(3-trimethoxysilylpropyl)isocyanurate , Chloromethylphenethyltrimethoxysilane, chloromethyltrimethoxysilane, etc. Among them, the preferred ones include: N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyl Trimethoxysilane, N-2-(aminoethyl)-3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane Silane, 3-triethoxysilyl-N-(1,3-dimethylbutylene)propylamine, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-epoxypropyl Oxypropyltrimethoxysilane, 3-Glycidoxypropylmethyldiethoxysilane, 3-Glycidoxypropyltriethoxysilane, Aminophenyltrimethoxysilane, Aminophenethyltrimethoxysilane, aminoanilinomethylphenethyltrimethoxysilane, etc. When heat resistance is required in the manufacturing process, it is desirable to link Si and amine groups with aromatics.

聚醯亞胺膜與前述無機基板的剝離強度必須在0.3N/cm以下。藉此,在聚醯亞胺膜上形成元件之後,該聚醯亞胺膜與無機基板的剝離變得非常容易。因此,可製造能夠大量生產的元件連結體,容易製造可撓式電子元件。前述剝離強度較佳為0.25N/cm以下,更佳為0.2N/cm以下,再佳為0.15N/cm以下,特佳為0.12N/cm以下。又,較佳為0.03N/cm以上。從在聚醯亞胺膜上形成元件時積層體不會剝離來看,更佳為0.06N/cm以上,再佳為0.08N/cm以上,特佳為0.1N/cm以上。前述剝離強度,係在將聚醯亞胺膜與前述無機基板貼合後,在大氣環境下於100℃熱處理10分鐘之後的積層體的值(初始剝離強度)。又,在氮氣環境下對於前述初始剝離強度測量時的積層體進一步於300℃進行熱處理1小時後的積層體,其剝離強度亦較佳係在前述範圍內(300℃加熱處理後剝離強度)。The peel strength between the polyimide film and the aforementioned inorganic substrate must be 0.3 N/cm or less. Thereby, after the element is formed on the polyimide film, the polyimide film and the inorganic substrate can be detached very easily. Therefore, it is possible to manufacture an element connected body which can be mass-produced, and it is easy to manufacture a flexible electronic element. The aforementioned peel strength is preferably 0.25 N/cm or less, more preferably 0.2 N/cm or less, further preferably 0.15 N/cm or less, particularly preferably 0.12 N/cm or less. Also, it is preferably 0.03 N/cm or more. From the standpoint that the laminate does not peel off when the device is formed on the polyimide film, it is more preferably at least 0.06 N/cm, further preferably at least 0.08 N/cm, and particularly preferably at least 0.1 N/cm. The above-mentioned peel strength is a value (initial peel strength) of the laminate after bonding the polyimide film and the above-mentioned inorganic substrate and heat-treating at 100° C. for 10 minutes in an air atmosphere. In addition, when the laminate is further heat-treated at 300° C. for 1 hour under a nitrogen atmosphere, the peel strength is also preferably within the aforementioned range (peel strength after heat treatment at 300° C.).

本發明的積層體,例如可以下述程序製作。預先對於無機基板的至少一面進行矽烷偶合劑處理,將經過矽烷偶合劑處理的面與聚醯亞胺膜重合再對於兩者加壓以進行積層,藉此可得到積層體。又,預先對於聚醯亞胺膜的至少一面進行矽烷偶合劑處理,將經過矽烷偶合劑處理的面與無機基板重合再對於兩者加壓以進行積層,亦可得到積層體。又,聚醯亞胺膜具有2層以上之積層構成時,較佳係將第1聚醯亞胺膜重合於無機基板。作為加壓方法,可列舉:在大氣中的一般加壓或疊層、或是在真空中的加壓或疊層,為了全面性地得到穩定的剝離強度,期望係以大尺寸的積層體(例如超過200mm)在大氣中進行疊層。相對於此,若是200mm以下左右的小尺寸積層體,則較佳為在真空中的加壓。真空度為一般油旋轉泵所形成的真空即為充分,只要在10Torr以下左右即為充分。作為較佳的壓力,係1MPa至20MPa,再佳為3MPa至10MPa。若壓力高,則有基板破損的疑慮,若壓力低則有可能出現未密合的部分。作為較佳的溫度,係從90℃至500℃,再佳係從100℃至400℃,若溫度高,可能會對薄膜造成損傷,若溫度低則可能導致密合力弱。The laminate of the present invention can be produced, for example, by the following procedures. At least one side of the inorganic substrate is treated with a silane coupling agent in advance, and the polyimide film is superimposed on the surface treated with the silane coupling agent, and both are laminated under pressure to obtain a laminate. Furthermore, at least one side of the polyimide film is treated with a silane coupling agent in advance, and the surface treated with the silane coupling agent is superimposed on the inorganic substrate, and both are laminated under pressure to obtain a laminate. Also, when the polyimide film has a laminated structure of two or more layers, it is preferable to laminate the first polyimide film on the inorganic substrate. As the pressurization method, general pressurization or lamination in the air, or pressurization or lamination in a vacuum are mentioned. In order to obtain a stable peel strength across the board, it is desirable to use a large-sized laminate ( For example, more than 200mm) are laminated in the atmosphere. On the other hand, in the case of a small-sized laminate of about 200 mm or less, it is preferable to pressurize in a vacuum. The vacuum degree is sufficient as that formed by a general oil rotary pump, and it is sufficient as long as it is below 10 Torr. The preferred pressure is 1 MPa to 20 MPa, more preferably 3 MPa to 10 MPa. If the pressure is high, there is a possibility that the substrate may be damaged, and if the pressure is low, there may be a non-adhesive part. A preferable temperature is from 90° C. to 500° C., more preferably from 100° C. to 400° C. If the temperature is high, the film may be damaged, and if the temperature is low, the adhesion may be weak.

<可撓式電子元件的製造方法> 本發明的可撓式電子元件的製造方法,包含在本發明之積層體的聚醯亞胺膜面上形成電子元件的步驟、以及將前述無機基板剝離的步驟。如此,可製造在聚醯亞胺膜面上形成有電子元件的可撓式電子元件。 <Manufacturing method of flexible electronic components> The manufacturing method of the flexible electronic device of the present invention includes the step of forming the electronic device on the polyimide film surface of the laminate of the present invention, and the step of peeling off the aforementioned inorganic substrate. In this way, a flexible electronic element in which the electronic element is formed on the surface of the polyimide film can be manufactured.

因此,本發明的可撓式電子元件包含本發明的聚醯亞胺膜與形成於該聚醯亞胺膜上的電子元件。Therefore, the flexible electronic component of the present invention includes the polyimide film of the present invention and electronic components formed on the polyimide film.

若使用前述積層體,則可使用既有的電子元件製造用設備、製程輕易製作可撓式電子元件。具體而言,藉由在積層體的聚醯亞胺膜上形成電子元件,從積層體連同聚醯亞胺膜一起剝離,藉此可製作可撓式電子元件。If the above-mentioned laminate is used, it is possible to easily manufacture flexible electronic elements using existing electronic element manufacturing equipment and processes. Specifically, by forming an electronic element on the polyimide film of the laminate, and peeling off the laminate together with the polyimide film, a flexible electronic element can be produced.

本說明書中,所謂的電子元件,係指具有載持電氣配線的單面、雙面或多層結構的配線基板、包含電晶體、二極體等主動元件、電阻、電容器、電感器等被動元件的電子電路、其他如感測壓力、溫度、光、濕度等的感測器元件、生質感測器元件、發光元件、液晶顯示、電泳顯示、自發光顯示等的影像顯示元件、無線/有線通訊元件、演算元件、記憶元件、MEMS元件、太陽能電池、薄膜電晶體等。In this specification, the so-called electronic component refers to a wiring substrate with a single-sided, double-sided or multi-layer structure that carries electrical wiring, and includes active components such as transistors and diodes, and passive components such as resistors, capacitors, and inductors. Electronic circuits, other sensor components such as sensing pressure, temperature, light, humidity, etc., biological sensor components, light-emitting components, liquid crystal display, electrophoretic display, self-luminous display, etc. Image display components, wireless/wired communication components , calculation components, memory components, MEMS components, solar cells, thin film transistors, etc.

又,該配線基板之中亦包含貫通聚醯亞胺的電極,其具有作為中介層的功能。藉由大致使其貫通,後續在將無機基板剝離之後,可大幅省略製作貫通電極的步驟。貫通孔的製作可使用已知的手法。例如,可藉由UV奈米雷射在聚醯亞胺膜中形成貫通孔。接著,例如具有下述手法:藉由應用在兩面印刷配線板的貫通孔或是多層印刷配線板中的通孔所使用的既定方法,在前述貫通孔中填滿導電性的金屬,此外再因應需求以金屬形成配線圖案。In addition, the wiring board also includes electrodes penetrating polyimide, which function as an interposer. By roughly penetrating through, the step of forming a penetrating electrode can be largely omitted after the inorganic substrate is peeled off. A known technique can be used to form the through hole. For example, through-holes can be formed in polyimide films by UV nanolaser. Then, for example, there is a method of filling the through holes with conductive metal by applying a predetermined method used for through holes of double-sided printed wiring boards or through holes of multilayer printed wiring boards, and then responding to It is necessary to form the wiring pattern with metal.

在聚醯亞胺膜中,如上所述,可以在打開貫通電極之後貼合於無機基板上。也可以在將無機基板與聚醯亞胺膜貼合後製作貫通電極。可以在將聚醯亞胺膜貫通後使該處金屬化,但也可以從聚醯亞胺膜的單側開孔而在未貫通至相反側表面的狀態下使該處金屬化。The polyimide film can be bonded to the inorganic substrate after opening the through-electrodes as described above. The through electrodes may also be produced after laminating the inorganic substrate and the polyimide film. This point may be metallized after the polyimide membrane is pierced, but it is also possible to metallize this point without penetrating through to the surface on the opposite side by opening a hole from one side of the polyimide film.

<剝離無機基板的步驟> 本發明的可撓式電子元件的製造方法,包含在積層體的聚醯亞胺膜面上形成電子元件之後,將前述無機基板剝離的步驟。在將前述無機基板剝離時,除了在聚醯亞胺膜與無機基板的界面進行剝離的情況以外,亦可將由2層以上構成之聚醯亞胺膜中的1層以上一起剝離,或是將前述無機基板與其他任意層一起剝離。 <Procedure for peeling off the inorganic substrate> The method of manufacturing a flexible electronic device according to the present invention includes a step of peeling off the inorganic substrate after forming the electronic device on the polyimide film surface of the laminate. When peeling the aforementioned inorganic substrate, in addition to peeling at the interface between the polyimide film and the inorganic substrate, one or more layers of the polyimide film composed of two or more layers may be peeled together, or the The aforementioned inorganic substrate is peeled together with other arbitrary layers.

在聚醯亞胺膜與無機基板的界面進行剝離的情況,亦即將附有元件的聚醯亞胺膜從無機基板剝離的方法並無特別限制,可採用以鑷子等從端部捲起的方法、在聚醯亞胺膜中形成切痕,在切痕部分的一邊貼上黏著膠帶後從該膠帶部分捲起的方法、將聚醯亞胺膜之切痕部分的1邊進行真空吸附後再從該部分捲起的方法等。另外,剝離時若在聚醯亞胺膜的切痕部分發生曲率小的捲曲,則應力會施加於該部分的元件,而有破壞元件的疑慮,故期望在曲率極大的狀態下剝離。例如期望一邊捲繞於曲率大的滾筒上一邊捲起,或是使用曲率大的滾筒位於剝離部分之構成的機器將其捲起。In the case of peeling the interface between the polyimide film and the inorganic substrate, that is, the method of peeling the polyimide film with the component from the inorganic substrate is not particularly limited, and the method of rolling it up from the end with tweezers or the like can be used. , Form a cut in the polyimide film, stick an adhesive tape on one side of the cut part and roll it up from the tape part, vacuum absorb one side of the cut part of the polyimide film and then The method of rolling up from this part, etc. In addition, if a curl with a small curvature occurs at the cut portion of the polyimide film during peeling, stress will be applied to the element at that portion, and the element may be damaged. Therefore, it is desirable to peel in a state where the curvature is extremely large. For example, it is desired to roll up while being wound on a roll with a large curvature, or to roll it up using a machine in which a roll with a large curvature is positioned at the peeling part.

作為在前述聚醯亞胺膜上形成切痕的方法,具有:藉由刀具等切削工具將聚醯亞胺膜切斷的方法、使雷射與積層體相對掃描而藉此切斷聚醯亞胺膜的方法、使水刀與積層體相對掃描而藉此切斷聚醯亞胺膜的方法、藉由半導體晶片的切割裝置稍微切入至玻璃層並將聚醯亞胺膜切斷的方法等,但方法並無特別限定。例如,在採用上述方法時,亦可適當採用對於切削具疊加超音波的手法、施予來回動作或上下動作等以提升切削性能等的手法。As a method of forming a cut on the aforementioned polyimide film, there are: a method of cutting the polyimide film with a cutting tool such as a knife, and cutting the polyimide film by scanning the laser and the laminate against each other. A method of amine film, a method of cutting a polyimide film by scanning a water jet against a laminate, a method of cutting a polyimide film by slightly cutting into a glass layer with a semiconductor wafer dicing device, etc. , but the method is not particularly limited. For example, when adopting the above-mentioned method, a technique of superimposing ultrasonic waves on a cutting tool, a technique of giving a back and forth motion or a vertical motion, etc. to improve the cutting performance may also be appropriately adopted.

又,在剝離部分上預先貼上其他補強基材,再連同補強基材一起剝離的方法亦為有用。剝離的可撓式電子元件為顯示元件的背板時,亦可預先貼上顯示元件的前板,在無機基板上一體化之後將兩者同時剝離而得到可撓性顯示元件。In addition, it is also useful to attach another reinforcing base material to the peeled part and then peel it off together with the reinforcing base material. When the peeled flexible electronic element is the back plate of the display element, the front plate of the display element can also be pasted in advance, integrated on the inorganic substrate, and then both are peeled off simultaneously to obtain a flexible display element.

又,在將無機基板與由2層以上構成之聚醯亞胺膜的一層以上一起剝離時,可預先將由2層以上構成的聚醯亞胺膜之界面的剝離力調整為小於與無機基板之界面的剝離力,並與前述方法同樣地進行剝離。聚醯亞胺膜之界面的剝離力調整,可根據各層聚醯亞胺的種類、以及在塗布上層時下層之醯亞胺化的程度來進行調整。Also, when the inorganic substrate and one or more polyimide films composed of two or more layers are peeled together, the peeling force at the interface of the polyimide film composed of two or more layers can be adjusted in advance to be smaller than that of the inorganic substrate. The peeling force at the interface was peeled off in the same manner as the aforementioned method. The adjustment of the peeling force at the interface of the polyimide film can be adjusted according to the type of polyimide of each layer and the degree of imidization of the lower layer when the upper layer is coated.

在將前述無機基板與其他任意層一起剝離時,預先設置與無機基板之密合力更高且與聚醯亞胺膜的剝離力經過調整的接著劑層等,並與前述方法同樣地進行剝離。 [實施例] When peeling the above-mentioned inorganic substrate together with other optional layers, an adhesive layer or the like having higher adhesion to the inorganic substrate and adjusted peeling force to the polyimide film is provided in advance, and the peeling is performed in the same manner as the above-mentioned method. [Example]

以下使用實施例詳細說明本發明,但本發明只要不超出其主旨,則不限於以下的實施例。另外,合成例、實施例中的各物性值等係以下述方法進行測量。Although the present invention will be described in detail below using examples, the present invention is not limited to the following examples unless the gist is exceeded. In addition, each physical property value in a synthesis example and an Example was measured by the following method.

<聚醯亞胺膜的厚度測量> 使用測微計(Feinpruf公司製,Miritoron1245D)測量膜的厚度。又,進行三次相同的測量,採用其算術平均值。 <Thickness measurement of polyimide film> The thickness of the film was measured using a micrometer (manufactured by Feinpruf, Miritoron 1245D). Also, the same measurement was performed three times, and the arithmetic mean thereof was adopted.

<總透光率> 使用HAZEMETER(NDH5000,日本電色公司製)測量膜的總透光率(TT)。作為光源,係使用D65 lump。又,進行三次相同的測量,採用其算術平均值。 <Total light transmittance> The total light transmittance (TT) of the film was measured using HAZEMETER (NDH5000, manufactured by Nippon Denshoku Co., Ltd.). As the light source, D65 lump was used. Also, the same measurement was performed three times, and the arithmetic mean thereof was adopted.

<霧度> 使用HAZEMETER(NDH5000,日本電色公司製)測量膜的霧度。作為光源,係使用D65 lump。又,進行三次相同的測量,採用其算術平均值。 <Haze> The haze of the film was measured using HAZEMETER (NDH5000, manufactured by Nippon Denshoku Co., Ltd.). As the light source, D65 lump was used. Also, the same measurement was performed three times, and the arithmetic mean thereof was adopted.

<黃色指數> 使用色度計(ZE6000,日本電色公司製)及C2光源,依照ASTM D1925測量薄膜的三刺激值XYZ值,以下式算出黃色指數(YI)。又,進行三次相同的測量,採用其算術平均值。 <Yellow Index> Using a colorimeter (ZE6000, manufactured by Nippon Denshoku Co., Ltd.) and a C2 light source, the tristimulus value XYZ value of the film was measured according to ASTM D1925, and the yellowness index (YI) was calculated by the following formula. Also, the same measurement was performed three times, and the arithmetic mean thereof was adopted.

YI=100×(1.28X-1.06Z)/Y <玻璃轉移溫度(Tg)、線膨脹係數(CTE)> 使用TMA(TMA4000S,BRUKER AXIS)進行測量。將膜裁切成寬度15mm×長度2mm的短片,以夾頭間10mm、載重5gf的條件設置於裝置。在氬氣環境下,以20℃/分鐘的升溫速度升溫至250℃後,以5℃/分鐘的速度降溫至30℃。之後,以10℃/分鐘升溫至不會發生熱分解的溫度(Td1-20℃)。從降溫時的200℃~50℃區間的斜率算出CTE,將第2次升溫時的反曲點作為Tg。 YI=100×(1.28X-1.06Z)/Y <Glass transition temperature (Tg), coefficient of linear expansion (CTE)> The measurement was performed using TMA (TMA4000S, BRUKER AXIS). The film was cut into short pieces with a width of 15 mm x a length of 2 mm, and it was set in an apparatus under conditions of 10 mm between chucks and a load of 5 gf. Under an argon atmosphere, the temperature was raised to 250° C. at a rate of 20° C./minute, and then lowered to 30° C. at a rate of 5° C./minute. Thereafter, the temperature was raised to a temperature (Td1-20°C) at which thermal decomposition did not occur at a rate of 10°C/min. The CTE was calculated from the slope in the range of 200° C. to 50° C. when the temperature was lowered, and the inflection point when the temperature was raised for the second time was taken as Tg.

<拉伸彈性係數、拉伸強度、伸度、抗張積> 使用TENSILON(Autograph AG-IS,島津製作所),如下述進行試驗。將薄膜裁切成塗布時之行進方向(MD方向)上5mm×長度50mm的短片狀,以此作為試片。以Air Jaw的夾頭夾持短片兩端30mm,在室溫下,以拉伸速度50mm/分鐘的條件,求出MD方向的拉伸彈性係數、破裂拉伸強度及破裂伸度。拉伸彈性係數係從應變-應力曲線的初始彈性斜率求出。測量係以各等級N=5進行,排除最大值及最小值,以3點的平均值作為數據。將破裂拉伸強度與破裂伸度的乘積作為抗張積。 <Tensile modulus, tensile strength, elongation, tensile product> Using TENSILON (Autograph AG-IS, Shimadzu Corporation), the test was carried out as follows. The film was cut into a short piece of 5 mm x 50 mm in length in the traveling direction (MD direction) at the time of coating, and this was used as a test piece. The two ends of the short film were clamped by the chuck of Air Jaw for 30 mm. At room temperature, the tensile modulus of elasticity, tensile strength at break and elongation at break in the MD direction were obtained under the condition of a tensile speed of 50 mm/min. The tensile elastic coefficient is obtained from the initial elastic slope of the strain-stress curve. The measurement system is carried out with N=5 for each level, the maximum and minimum values are excluded, and the average value of 3 points is used as the data. The product of the tensile strength at break and the elongation at break was taken as the tensile product.

<具有酸酐基之矽倍半氧烷化合物的 1HNMR測量> 使用各試料,以下述條件進行 1HNMR測量。 裝置:Bruker BioSpin公司製DPX400(實施例1~2)或Agilent製 400MR(實施例3~9) 溶劑:氘代氯仿(CDCl 3)(實施例1~2)或氘代DMSO(DMSO-d 6)(實施例3~9) 試料濃度:3mg/1mL 測量溫度:室溫(24℃) 共振頻率:400MHz 累積次數:32次 < 1 HNMR measurement of silsesquioxane compound which has an acid anhydride group> Using each sample, 1 HNMR measurement was performed under the following conditions. Device: DPX400 manufactured by Bruker BioSpin (Examples 1-2) or 400MR manufactured by Agilent (Examples 3-9) Solvent: Deuterated chloroform (CDCl 3 ) (Examples 1-2) or deuterated DMSO (DMSO-d 6 ) (Examples 3 to 9) Sample concentration: 3mg/1mL Measurement temperature: room temperature (24°C) Resonance frequency: 400MHz Accumulated times: 32 times

[合成例1-1:含硫醇基之矽倍半氧烷化合物1的合成] 在具備攪拌機、冷卻管、分水器、溫度計、滴液漏斗、氮氣吹入口的反應裝置中加入3-巰基丙基三甲氧基矽烷11.8g(60.0mmol)、甲基三甲氧基矽烷2.72g(20.0mmol)([成分(a2)的莫耳數]/[成分(a1)與成分(a2)的總莫耳數]=0.25)、1.9g的離子交換水([用於水解反應之水的莫耳數]/[成分(a1)、(a2)所包含之烷氧基的總莫耳數](莫耳比)=0.45)、1.0g的陽離子交換樹脂,在室溫下使其進行水解反應30分鐘。反應後,將陽離子交換樹脂過濾後,將其以5g的乙二醇二甲醚(DMG)稀釋,得到水解物溶液。 [Synthesis Example 1-1: Synthesis of Thiol Group-Containing Silsesquioxane Compound 1] Add 11.8g (60.0mmol) of 3-mercaptopropyltrimethoxysilane and 2.72g of methyltrimethoxysilane ( 20.0mmol) ([the number of moles of component (a2)]/[the total number of moles of components (a1) and components (a2)]=0.25), 1.9g of ion-exchanged water ([the amount of water used for hydrolysis reaction Mole number]/[total mole number of alkoxy groups contained in components (a1) and (a2)] (mole ratio)=0.45), 1.0 g of cation exchange resin, hydrolyzed at room temperature React for 30 minutes. After the reaction, the cation exchange resin was filtered and diluted with 5 g of ethylene glycol dimethyl ether (DMG) to obtain a hydrolyzate solution.

然後在另一反應容器中加入9g的DMG、0.05g的氫氧化四甲銨的25%水溶液,加熱至80℃。此處花費2小時30分鐘滴入先前的水解物溶液。在滴入中,氫氧化四甲銨溶解,反應液變得澄清。滴入後再使其於80℃反應15分鐘後,冷卻至25℃。此處加入0.5g的陽離子交換樹脂,在室溫下攪拌4小時。攪拌中,氫氧化四甲銨被吸附,反應液變得澄清。藉由將陽離子交換樹脂濾除,得到含硫醇基之矽倍半氧烷(每一分子的平均硫醇基數=6個)的溶液。添加甲苯,在減壓下加熱至70℃,藉此將因水解而產生之甲醇與水、甲苯的一部分餾除。適當追加甲苯,以將最終固體成分濃度調整為72%。Then, a 25% aqueous solution of 9 g of DMG and 0.05 g of tetramethylammonium hydroxide was added to another reaction vessel, and heated to 80°C. Here it took 2 hours and 30 minutes to drop in the previous hydrolyzate solution. During the dropping, tetramethylammonium hydroxide was dissolved, and the reaction liquid became clear. After dripping, it was made to react at 80 degreeC for 15 minutes, and then cooled to 25 degreeC. Here, 0.5 g of cation exchange resin was added, and stirred at room temperature for 4 hours. During stirring, tetramethylammonium hydroxide was adsorbed, and the reaction solution became clear. By filtering off the cation exchange resin, a solution of silsesquioxane containing thiol groups (average number of thiol groups per molecule=6) was obtained. Toluene was added and heated to 70° C. under reduced pressure to distill off methanol, water, and a part of toluene generated by hydrolysis. Toluene was appropriately added to adjust the final solid content concentration to 72%.

[合成例1-2:含硫醇基之矽倍半氧烷化合物2的合成] 使3-巰基丙基三甲氧基矽烷為8.83g(45.0mmol)、甲基三甲氧基矽烷為5.44g(40.0mmol)([成分(a2)的莫耳數]/[成分(a1)與成分(a2)的總莫耳數]=0.47)、離子交換水為2.0g([用於水解反應之水的莫耳數]/[成分(a1)、(a2)所包含的烷氧基的總莫耳數](莫耳比)=0.45),除此之外,與合成例1-1同樣地進行合成。所得之含硫醇基之矽倍半氧烷每一分子的平均硫醇基數為4.5個,最終固體成分濃度為72質量%。 [Synthesis Example 1-2: Synthesis of Thiol Group-Containing Silsesquioxane Compound 2] 8.83 g (45.0 mmol) of 3-mercaptopropyltrimethoxysilane and 5.44 g (40.0 mmol) of methyltrimethoxysilane ([the number of moles of component (a2)]/[component (a1) and component The total number of moles of (a2)]=0.47), ion-exchanged water is 2.0g ([the number of moles of water used for hydrolysis reaction]/[the total number of alkoxy groups contained in components (a1), (a2) molar number] (molar ratio) = 0.45), and synthesized in the same manner as in Synthesis Example 1-1. The average number of thiol groups per molecule of the obtained thiol group-containing silsesquioxane was 4.5, and the final solid content concentration was 72% by mass.

[合成例1-3:含硫醇基之矽倍半氧烷化合物3的合成] 使3-巰基丙基三甲氧基矽烷為4.91g(25.0mmol)、甲基三甲氧基矽烷為6.81g(50.0mmol)([成分(a2)的莫耳數]/[成分(a1)與成分(a2)的總莫耳數]=0.67)、離子交換水為1.8g([用於水解反應之水的莫耳數]/[成分(a1)、(a2)所包含的烷氧基的總莫耳數](莫耳比)=0.45),除此之外,與合成例1-1同樣地合成。所得之含硫醇基之矽倍半氧烷每一分子的平均硫醇基數為2.5個,最終固體成分濃度為72質量%。 [Synthesis Example 1-3: Synthesis of Thiol Group-Containing Silsesquioxane Compound 3] 4.91 g (25.0 mmol) of 3-mercaptopropyltrimethoxysilane and 6.81 g (50.0 mmol) of methyltrimethoxysilane ([the number of moles of component (a2)]/[component (a1) and component The total number of moles of (a2)]=0.67), ion-exchanged water is 1.8g ([the number of moles of water used for hydrolysis reaction]/[the total number of alkoxy groups contained in components (a1), (a2) molar number] (molar ratio) = 0.45), and synthesized in the same manner as in Synthesis Example 1-1. The average number of thiol groups per molecule of the obtained thiol group-containing silsesquioxane was 2.5, and the final solid content concentration was 72% by mass.

[合成例2-1:具有酸酐基之矽倍半氧烷SQ1的合成] 將下述含硫醇基之矽倍半氧烷溶液(荒川化學工業股份有限公司製,Compoceran SQ-109)10g(硫醇基量16.7mmol)、降莰烯酸酐2.74g(16.7mmol)置入反應容器,一邊攪拌一邊照射紫外光(Spot Cure SP-11,USHIO公司製)20分鐘,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ1。藉由NMR及IR測量,確認硫醇基與降莰烯已反應。以PTFE過濾器(細孔徑10μm)將所得之溶液過濾後,用於後述的聚醯胺酸溶液之合成(關於SQ3~SQ9亦相同)。 [Synthesis Example 2-1: Synthesis of silsesquioxane SQ1 having an acid anhydride group] Put the following thiol group-containing silsesquioxane solution (manufactured by Arakawa Chemical Industry Co., Ltd., Compoceran SQ-109) 10g (thiol group content: 16.7mmol), and norbornene acid anhydride 2.74g (16.7mmol) The reaction container was irradiated with ultraviolet light (Spot Cure SP-11, manufactured by USHIO) for 20 minutes while stirring, thereby obtaining silsesquioxane SQ1 having an acid anhydride group as a colorless and transparent solution. By NMR and IR measurements, it was confirmed that the thiol group and norbornene had reacted. The obtained solution was filtered with a PTFE filter (pore diameter: 10 μm), and used for the synthesis of the polyamic acid solution described later (the same applies to SQ3 to SQ9).

Compoceran SQ-109:甲基三甲氧基矽烷與3-巰基丙基三甲氧基矽烷的縮合物,莫耳比(前者/(前者+後者))=2/8,溶劑PGMEA,固體成分濃度25質量%。Compoceran SQ-109: Condensate of methyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane, molar ratio (former/(former+latter))=2/8, solvent PGMEA, solid content concentration 25 mass %.

另外,上述莫耳比及每一分子的平均硫醇基數係以下述方式算出。在Compoceran SQ-109的 1HNMR測量中,從源自甲基的質子(δ=0.0~0.2附近,3H)與源自丙基硫醇基的質子(δ=0.2~0.8附近,2H)的積分比,算出甲基三甲氧基矽烷與3-巰基丙基三甲氧基矽烷之莫耳比。每一分子的平均硫醇基數,係從上述硫醇基與甲基的比例、每一結構單元的分子量(SiO 1.5Me=67.1,SiO 1.5C 3H 6SH=127.2)、溶液的硫醇基當量(600g/eq.)、固體成分濃度25質量%算出。 In addition, the said molar ratio and the average number of thiol groups per molecule were calculated as follows. In 1 HNMR measurement of Compoceran SQ-109, integration from protons derived from methyl groups (around δ=0.0 to 0.2, 3H) and protons derived from propylthiol groups (around δ=0.2 to 0.8, 2H) Ratio, calculate the molar ratio of methyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane. The average number of thiol groups per molecule is based on the ratio of the above-mentioned thiol groups to methyl groups, the molecular weight of each structural unit (SiO 1.5 Me=67.1, SiO 1.5 C 3 H 6 SH=127.2), the thiol groups of the solution Equivalent (600g/eq.), solid content concentration 25% by mass calculation.

作為參考,NMR測量的結果顯示於圖1~4。圖1中顯示SQ-109(PGMEA溶液)的 1HNMR(CDCl 3)光譜,圖2中顯示PGMEA的 1HNMR(CDCl 3)光譜,圖3中顯示降莰烯酸酐的 1HNMR(CDCl 3)光譜,圖4中顯示反應後之反應混合物的 1HNMR(CDCl 3)光譜。圖4中,源自降莰烯酸酐之雙鍵的峰值(δ=6.3等)消失,認為硫醇基與雙鍵的反應已進行。 For reference, the results of the NMR measurement are shown in FIGS. 1 to 4 . Figure 1 shows the 1 HNMR (CDCl 3 ) spectrum of SQ-109 (PGMEA solution), Figure 2 shows the 1 HNMR (CDCl 3 ) spectrum of PGMEA, and Figure 3 shows the 1 HNMR (CDCl 3 ) spectrum of norbornene anhydride , the 1 HNMR (CDCl 3 ) spectrum of the reaction mixture after the reaction is shown in FIG. 4 . In FIG. 4 , the peak (δ=6.3, etc.) derived from the double bond of norbornene acid anhydride disappeared, and it was considered that the reaction between the thiol group and the double bond had progressed.

[合成例2-2:具有酸酐基之矽倍半氧烷SQ2的合成] 含硫醇基之矽倍半氧烷溶液(荒川化學工業股份有限公司製,Compoceran SQ-109)10g(硫醇基量16.7mmol)、降莰烯酸酐2.74g(16.7mmol)、氯化鐵(III)1mg置入反應容器,攪拌10分鐘,藉此得到作為淡黃色溶液(黃色著色被認為係來自氯化鐵)的具有酸酐基之矽倍半氧烷SQ2。藉由NMR及IR測量,確認硫醇基與降莰烯已反應。 [Synthesis Example 2-2: Synthesis of silsesquioxane SQ2 having an acid anhydride group] Thiol-containing silsesquioxane solution (manufactured by Arakawa Chemical Industry Co., Ltd., Compoceran SQ-109) 10g (16.7mmol of thiol group), 2.74g (16.7mmol) of norcamphenic anhydride, ferric chloride ( III) 1 mg was put into a reaction vessel and stirred for 10 minutes to obtain silsesquioxane SQ2 having an acid anhydride group as a pale yellow solution (the yellow coloration is believed to be derived from ferric chloride). By NMR and IR measurements, it was confirmed that the thiol group and norbornene had reacted.

作為參考,圖5中顯示反應後的反應混合物之 1HNMR(CDCl 3)光譜作為NMR測量的結果。圖5中,源自降莰烯酸酐之雙鍵的峰值(δ=6.3等)消失,認為硫醇基與雙鍵的反應已進行。 For reference, the 1 HNMR (CDCl 3 ) spectrum of the reaction mixture after the reaction is shown in FIG. 5 as a result of NMR measurement. In FIG. 5 , the peak (δ=6.3, etc.) derived from the double bond of norbornene acid anhydride disappeared, and it was considered that the reaction between the thiol group and the double bond had progressed.

[合成例2-3:具有酸酐基之矽倍半氧烷SQ3的合成] 將合成例1-1中所得之含硫醇基之矽倍半氧烷化合物1的溶液20g(硫醇基量97.0mmol)、降莰烯酸酐15.9g(97.0mmol)、10.0g的PGMEA置入反應容器,一邊攪拌一邊照射紫外光(Spot Cure SP-11,USHIO公司製)20分鐘,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ3。藉由NMR及IR測量,確認硫醇基與降莰烯已反應。 [Synthesis Example 2-3: Synthesis of silsesquioxane SQ3 having an acid anhydride group] Put 20 g of the solution of the thiol group-containing silsesquioxane compound 1 obtained in Synthesis Example 1-1 (97.0 mmol of thiol group), 15.9 g (97.0 mmol) of norbornene anhydride, and 10.0 g of PGMEA into The reaction container was irradiated with ultraviolet light (Spot Cure SP-11, manufactured by USHIO Co., Ltd.) for 20 minutes while stirring, thereby obtaining silsesquioxane SQ3 having an acid anhydride group as a colorless and transparent solution. By NMR and IR measurements, it was confirmed that the thiol group and norbornene had reacted.

[合成例2-4:具有酸酐基之矽倍半氧烷SQ4的合成] 將合成例1-2中所得之含硫醇基之矽倍半氧烷化合物2的溶液20g(硫醇基量77.9mmol)、降莰烯酸酐12.8g(77.9mmol)、10.0g的PGMEA置入反應容器,一邊攪拌一邊照射紫外光(Spot Cure SP-11,USHIO公司製)20分鐘,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ4。藉由NMR及IR測量,確認硫醇基與降莰烯已反應。 [Synthesis Example 2-4: Synthesis of silsesquioxane SQ4 having an acid anhydride group] Put 20 g of the solution of the thiol group-containing silsesquioxane compound 2 obtained in Synthesis Example 1-2 (77.9 mmol of thiol group), 12.8 g (77.9 mmol) of norbornene anhydride, and 10.0 g of PGMEA into The reaction container was irradiated with ultraviolet light (Spot Cure SP-11, manufactured by USHIO Co., Ltd.) for 20 minutes while stirring, thereby obtaining silsesquioxane SQ4 having an acid anhydride group as a colorless and transparent solution. By NMR and IR measurements, it was confirmed that the thiol group and norbornene had reacted.

[合成例2-5:具有酸酐基之矽倍半氧烷SQ5的合成] 將合成例1-3中所得之含硫醇基之矽倍半氧烷化合物3的溶液20g(硫醇基量54.5mmol)、5-降莰烯-2,3-二甲酸酐8.95g(54.5mmol)、10.0g的PGMEA置入反應容器,一邊攪拌一邊照射紫外光(Spot Cure SP-11,USHIO公司製)20分鐘,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ5。藉由NMR及IR測量,確認硫醇基與5-降莰烯-2,3-二甲酸酐已反應。 [Synthesis Example 2-5: Synthesis of silsesquioxane SQ5 having an acid anhydride group] 20 g (thiol group content 54.5 mmol) of the thiol group-containing silsesquioxane compound 3 obtained in Synthesis Example 1-3, 5-norbornene-2,3-dicarboxylic anhydride 8.95 g (54.5 mmol) and 10.0 g of PGMEA were placed in a reaction vessel, and irradiated with ultraviolet light (Spot Cure SP-11, manufactured by USHIO Co., Ltd.) for 20 minutes while stirring, thereby obtaining silsesquioxane SQ5 having an acid anhydride group as a colorless transparent solution . By NMR and IR measurements, it was confirmed that the thiol group had reacted with 5-norbornene-2,3-dicarboxylic anhydride.

[合成例2-6:具有酸酐基之矽倍半氧烷SQ6的合成] 將含硫醇基之三烷氧基矽烷溶液(荒川化學工業股份有限公司製,Compoceran SQ-109)6g(硫醇基量10.0mmol)、烯丙基琥珀酸酐1.40g(10.0mmol)置入反應容器,一邊攪拌一邊照射紫外光(Spot Cure SP-11,USHIO公司製)20分鐘,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ6。藉由NMR及IR測量,確認硫醇基與烯丙基琥珀酸酐已反應。 [Synthesis Example 2-6: Synthesis of silsesquioxane SQ6 having an acid anhydride group] Put 6 g of thiol group-containing trialkoxysilane solution (manufactured by Arakawa Chemical Industry Co., Ltd., Compoceran SQ-109) (10.0 mmol of thiol group), and 1.40 g (10.0 mmol) of allyl succinic anhydride into the reaction The container was irradiated with ultraviolet light (Spot Cure SP-11, manufactured by USHIO Co., Ltd.) for 20 minutes while stirring, thereby obtaining silsesquioxane SQ6 having an acid anhydride group as a colorless and transparent solution. By NMR and IR measurements, it was confirmed that the thiol group had reacted with allyl succinic anhydride.

[合成例2-7:具有酸酐基之矽倍半氧烷SQ7的合成] 將含硫醇基之三烷氧基矽烷溶液(荒川化學工業股份有限公司製,Compoceran SQ-109)6g(硫醇基量10.0mmol)、外-3,6-環氧-1,2,3,6-四氫苯二甲酸酐1.66g(10.0mmol)置入反應容器,一邊攪拌一邊照射紫外光(Spot Cure SP-11,USHIO公司製)20分鐘,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ7。藉由NMR及IR測量,確認硫醇基與外-3,6-環氧-1,2,3,6-四氫苯二甲酸酐已反應。 [Synthesis Example 2-7: Synthesis of silsesquioxane SQ7 having an acid anhydride group] 6 g of a trialkoxysilane solution containing thiol groups (manufactured by Arakawa Chemical Industry Co., Ltd., Compoceran SQ-109) (10.0 mmol of thiol groups), exo-3,6-epoxy-1,2,3 1.66 g (10.0 mmol) of 6-tetrahydrophthalic anhydride was placed in a reaction vessel, and irradiated with ultraviolet light (Spot Cure SP-11, manufactured by USHIO Co., Ltd.) Based on silsesquioxane SQ7. By NMR and IR measurements, it was confirmed that the thiol group had reacted with exo-3,6-epoxy-1,2,3,6-tetrahydrophthalic anhydride.

[合成例2-8:具有酸酐基之矽倍半氧烷SQ8的合成] 將含硫醇基之三烷氧基矽烷溶液(荒川化學工業股份有限公司製,Compoceran SQ-109)3g(硫醇基量5.0mmol)、5,6-二氫-1,4-二噻烯-2,3-二甲酸酐(5,6-Dihydro-1,4-dithiin-2,3-dicarboxylic Anhydride)0.94g (5.0mmol)、γ-丁內酯(5mL)置入反應容器,一邊攪拌一邊照射紫外光(Spot Cure SP-11,USHIO公司製)20分鐘,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ8。藉由NMR及IR測量,確認硫醇基與5,6-二氫-1,4-二噻烯-2,3-二甲酸酐已反應。 [Synthesis Example 2-8: Synthesis of silsesquioxane SQ8 having an acid anhydride group] 3 g of trialkoxysilane solution containing thiol group (manufactured by Arakawa Chemical Industry Co., Ltd., Compoceran SQ-109) (5.0 mmol of thiol group), 5,6-dihydro-1,4-dithiene -2,3-dicarboxylic anhydride (5,6-Dihydro-1,4-dithiin-2,3-dicarboxylic Anhydride) 0.94g (5.0mmol), γ-butyrolactone (5mL) into the reaction vessel, while stirring While irradiating with ultraviolet light (Spot Cure SP-11, manufactured by USHIO Corporation) for 20 minutes, silsesquioxane SQ8 having an acid anhydride group was obtained as a colorless and transparent solution. By NMR and IR measurements, it was confirmed that the thiol group had reacted with 5,6-dihydro-1,4-dithiene-2,3-dicarboxylic anhydride.

[合成例2-9:具有酸酐基之矽倍半氧烷SQ9的合成] 將含硫醇基之三烷氧基矽烷溶液(荒川化學工業股份有限公司製,Compoceran SQ-109)6g(硫醇基量10.0mmol)置入反應容器,一邊攪拌一邊緩慢添加氯化苯偏三酸酐(trimellitic anhydride chloride)2.10g (10.0mmol)。在室溫下攪拌24小時,藉此得到作為無色透明溶液的具有酸酐基之矽倍半氧烷SQ9。藉由NMR及IR測量,確認硫醇基與醯氯基已反應。 [Synthesis Example 2-9: Synthesis of silsesquioxane SQ9 having an acid anhydride group] Put 6 g of thiol group-containing trialkoxysilane solution (manufactured by Arakawa Chemical Industry Co., Ltd., Compoceran SQ-109) (10.0 mmol of thiol group) into the reaction vessel, and slowly add triphenylene trichloride while stirring Acid anhydride (trimellitic anhydride chloride) 2.10 g (10.0 mmol). By stirring at room temperature for 24 hours, silsesquioxane SQ9 having an acid anhydride group was obtained as a colorless and transparent solution. By NMR and IR measurements, it was confirmed that the thiol group and the chloroyl group had reacted.

[比較合成例2-1:末端二羧酸酐矽倍半氧烷SQN1(不含硫醚部)的合成] 藉由國際公開WO2010/095329A1號公報的實施例1記載的方法,合成具有下述化學式表示之結構且不含硫醚部的矽倍半氧烷SQN1。 [Comparative synthesis example 2-1: Synthesis of terminal dicarboxylic anhydride silsesquioxane SQN1 (without thioether moiety)] Silsesquioxane SQN1 having a structure represented by the following chemical formula and not containing a thioether moiety was synthesized by the method described in Example 1 of International Publication WO2010/095329A1.

Figure 02_image025
[比較合成例2-2:末端二羧酸酐矽倍半氧烷SQN2(不含硫醚部)的合成] 藉由國際公開WO2010/095329A1號公報的實施例2記載的方法,合成具有下述化學式表示的結構且不含硫醚部的矽倍半氧烷SQN2。
Figure 02_image025
[Comparative Synthesis Example 2-2: Synthesis of terminal dicarboxylic acid anhydride silsesquioxane SQN2 (without thioether moiety]] According to the method described in Example 2 of International Publication WO2010/095329A1, the compound having the following chemical formula was synthesized: The structure shown and the silsesquioxane SQN2 without the thioether moiety.

Figure 02_image027
[實施例A:聚醯胺酸溶液A的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,5.88g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,9.74g)、SQ1溶液(0.655g),溶解於N,N-二甲基乙醯胺(DMAc,125.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液A(CBDA/SQ1/TFMB之莫耳比=0.985/0.015/1.00)。此處,SQ1之莫耳比,係以酸酐基每2價為基準所算出的值,具體係以源自矽倍半氧烷化合物A的單元結構之總莫耳數除以前述二羧酸酐基的總數再乘以2倍所得的數值進行計算(關於以下的莫耳比亦相同)。
Figure 02_image027
[Example A: Synthesis of Polyamic Acid Solution A] 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA, 5.88 g), 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl (TFMB, 9.74g), SQ1 solution (0.655g), dissolved in N,N-dimethylethyl After amide (DMAc, 125.0 g), it was stirred at 25° C. for 24 hours to obtain polyamide acid solution A (mole ratio of CBDA/SQ1/TFMB=0.985/0.015/1.00). Here, the molar ratio of SQ1 is a value calculated on the basis of an acid anhydride group per 2 valences, specifically, the total molar number of the unit structure derived from the silsesquioxane compound A is divided by the aforementioned dicarboxylic anhydride group Calculated by multiplying the total value by 2 times (the same applies to the following mol ratios).

[實施例B:聚醯胺酸溶液B的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,5.88g)、4,4’-二胺基苯甲醯胺苯(DABA,6.92g)、SQ1溶液(0.655g),溶解於N,N-二甲基乙醯胺(DMAc,133.7g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液B(CBDA/SQ1/DABA之莫耳比=0.985/0.015/1.00)。 [Example B: Synthesis of Polyamic Acid Solution B] 1,2,3,4-Cyclobutanetetracarboxylic dianhydride (CBDA, 5.88g) and 4,4'-diaminobenzamide were added while passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade Aminobenzene (DABA, 6.92g), SQ1 solution (0.655g), dissolved in N,N-dimethylacetamide (DMAc, 133.7g), stirred at 25°C for 24 hours, thereby obtaining polyamide Acid solution B (molar ratio of CBDA/SQ1/DABA=0.985/0.015/1.00).

[實施例Ca:聚醯胺酸溶液Ca的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,4.88g)、SQ1溶液(0.328g),溶解於N,N-二甲基乙醯胺(DMAc,67.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液Ca(PMDA/SQ1/TFMB之莫耳比=0.985/0.015/1.00)。 [Example Ca: Synthesis of Polyamic Acid Solution Ca] While passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 4.88g), SQ1 solution (0.328g), dissolved in N,N-dimethylacetamide (DMAc, 67.0g), and stirred at 25°C for 24 hours to obtain polyamide Amino acid solution Ca (molar ratio of PMDA/SQ1/TFMB=0.985/0.015/1.00).

[實施例Cb:聚醯胺酸溶液Cb的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,4.90g)、SQ3溶液(0.227g),溶解於N-甲基-2-吡咯啶酮(NMP,66.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液Cb(PMDA/SQ3/TFMB之莫耳比=0.98/0.02/1.00)。 [Example Cb: Synthesis of Polyamic Acid Solution Cb] While passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 4.90g), SQ3 solution (0.227g), dissolved in N-methyl-2-pyrrolidone (NMP, 66.0g), stirred at 25°C for 24 hours, thereby obtaining polyamide Amino acid solution Cb (mole ratio of PMDA/SQ3/TFMB=0.98/0.02/1.00).

[實施例Cc:聚醯胺酸溶液Cc的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,4.90g)、SQ4溶液(0.258g),溶解於N-甲基-2-吡咯啶酮(NMP,66.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液Cc(PMDA/SQ4/TFMB之莫耳比=0.98/0.02/1.00)。 [Example Cc: Synthesis of Polyamic Acid Solution Cc] While passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 4.90g), SQ4 solution (0.258g), dissolved in N-methyl-2-pyrrolidone (NMP, 66.0g), and stirred at 25°C for 24 hours to obtain polyamide Amino acid solution Cc (molar ratio of PMDA/SQ4/TFMB=0.98/0.02/1.00).

[實施例Cd:聚醯胺酸溶液Cd的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,4.90g)、SQ5溶液(0.325g),溶解於N-甲基-2-吡咯啶酮(NMP,66.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液Cd(PMDA/SQ5/TFMB之莫耳比=0.98/0.02/1.00)。 [Example Cd: Synthesis of Polyamic Acid Solution Cd] While passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 4.90g), SQ5 solution (0.325g), dissolved in N-methyl-2-pyrrolidone (NMP, 66.0g), and stirred at 25°C for 24 hours to obtain polyamide Amino acid solution Cd (molar ratio of PMDA/SQ5/TFMB=0.98/0.02/1.00).

[實施例Ce:聚醯胺酸溶液Ce的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,4.90g)、SQ9溶液(0.354g),溶解於N-甲基-2-吡咯啶酮(NMP,66.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液Ce(PMDA/SQ9/TFMB之莫耳比=0.985/0.015/1.00)。 [Example Ce: Synthesis of Polyamic Acid Solution Ce] While passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 4.90g), SQ9 solution (0.354g), dissolved in N-methyl-2-pyrrolidone (NMP, 66.0g), and stirred at 25°C for 24 hours, thereby obtaining polyamide Amino acid solution Ce (molar ratio of PMDA/SQ9/TFMB=0.985/0.015/1.00).

[實施例D:聚醯胺酸溶液D的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基苯甲醯胺苯(DABA,3.47g)、SQ1溶液(0.328g),溶解於N,N-二甲基乙醯胺(DMAc,63.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液D(PMDA/SQ1/DABA之莫耳比=0.985/0.015/1.00)。 [Example D: Synthesis of Polyamic Acid Solution D] While making nitrogen pass through a reactor equipped with a nitrogen introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diaminobenzamide benzene (DABA, 3.47 g), SQ1 solution (0.328g), dissolved in N,N-dimethylacetamide (DMAc, 63.0g), stirred at 25°C for 24 hours, thereby obtaining polyamide acid solution D (PMDA/SQ1/DABA Mole ratio=0.985/0.015/1.00).

[比較例A1:聚醯胺酸溶液A1的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,19.6g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,32.3g),溶解於N,N-二甲基乙醯胺(DMAc,279.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液A1(CBDA/TFMB之莫耳比=1.00/1.00)。 [Comparative Example A1: Synthesis of Polyamic Acid Solution A1] 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA, 19.6g), 4,4'-diamino-2, 2'-bis(trifluoromethyl)biphenyl (TFMB, 32.3g), dissolved in N,N-dimethylacetamide (DMAc, 279.0g), stirred at 25°C for 24 hours, thereby obtaining Polyamide acid solution A1 (CBDA/TFMB molar ratio=1.00/1.00).

[比較例B1:聚醯胺酸溶液B1的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,3.98g)、4,4’-二胺基苯甲醯胺苯(DABA,4.58g),溶解於N,N-二甲基乙醯胺(DMAc,76.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液B1(CBDA/DABA之莫耳比=1.00/1.00)。 [Comparative Example B1: Synthesis of Polyamic Acid Solution B1] 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA, 3.98g) and 4,4'-diaminobenzoyl Aminobenzene (DABA, 4.58g) was dissolved in N,N-dimethylacetamide (DMAc, 76.0g) and stirred at 25°C for 24 hours to obtain polyamide acid solution B1 (CBDA/DABA Mole ratio=1.00/1.00).

[實施例B2:聚醯胺酸溶液B2的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,2.94g)、4,4’-二胺基苯甲醯胺苯(DABA,3.54g)、SQ1溶液(1.00g),溶解於N,N-二甲基乙醯胺(DMAc,90g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液B2(CBDA/SQ1/DABA之莫耳比=0.955/0.045/1.00)。 [Example B2: Synthesis of Polyamic Acid Solution B2] 1,2,3,4-Cyclobutanetetracarboxylic dianhydride (CBDA, 2.94g) and 4,4'-diaminobenzamide were added while passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade Aminobenzene (DABA, 3.54g), SQ1 solution (1.00g), dissolved in N,N-dimethylacetamide (DMAc, 90g), stirred at 25°C for 24 hours, thereby obtaining polyamic acid Solution B2 (molar ratio of CBDA/SQ1/DABA=0.955/0.045/1.00).

[比較例B4:聚醯胺酸溶液B4的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,3.98g)、4,4’-二胺基苯甲醯胺苯(DABA,4.55g),溶解於N,N-二甲基乙醯胺(DMAc,76.0g)後,在25℃下攪拌24小時。之後添加SQ-109(0.546g),再攪拌24小時,藉此得到聚醯胺酸溶液B4(CBDA/DABA/SQ-109之莫耳比=1.00/1.00/0.01)。 [Comparative Example B4: Synthesis of Polyamic Acid Solution B4] 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA, 3.98g) and 4,4'-diaminobenzoyl Aminobenzene (DABA, 4.55g) was dissolved in N,N-dimethylacetamide (DMAc, 76.0g), and stirred at 25°C for 24 hours. Thereafter, SQ-109 (0.546 g) was added and stirred for 24 hours to obtain polyamic acid solution B4 (molar ratio of CBDA/DABA/SQ-109=1.00/1.00/0.01).

[比較例B5:聚醯胺酸溶液B5的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,3.98g)、4,4’-二胺基苯甲醯胺苯(DABA,4.55g),溶解於N,N-二甲基乙醯胺(DMAc,76.0g)後,在25℃下攪拌24小時。之後添加SQ-109(8.19g),再攪拌24小時,藉此得到聚醯胺酸溶液B5(CBDA/DABA/SQ-109之莫耳比=1.00/1.00/0.15)。 [Comparative Example B5: Synthesis of Polyamic Acid Solution B5] 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA, 3.98g) and 4,4'-diaminobenzoyl Aminobenzene (DABA, 4.55g) was dissolved in N,N-dimethylacetamide (DMAc, 76.0g), and stirred at 25°C for 24 hours. Thereafter, SQ-109 (8.19 g) was added, followed by stirring for 24 hours to obtain polyamic acid solution B5 (molar ratio of CBDA/DABA/SQ-109=1.00/1.00/0.15).

[比較例B6:聚醯胺酸溶液B6的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入1,2,3,4-環丁烷四甲酸二酐(CBDA,3.98g)、4,4’-二胺基苯甲醯胺苯(DABA,4.55g),溶解於N,N-二甲基乙醯胺(DMAc,76.0g)後,在25℃下攪拌24小時。之後添加SQ-109(27.3g),再攪拌24小時,藉此得到聚醯胺酸溶液B6(CBDA/DABA/SQ-109之莫耳比=1.00/1.00/0.50)。 [Comparative Example B6: Synthesis of Polyamic Acid Solution B6] 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA, 3.98g) and 4,4'-diaminobenzoyl Aminobenzene (DABA, 4.55g) was dissolved in N,N-dimethylacetamide (DMAc, 76.0g), and stirred at 25°C for 24 hours. Thereafter, SQ-109 (27.3 g) was added, followed by stirring for 24 hours to obtain polyamic acid solution B6 (the molar ratio of CBDA/DABA/SQ-109=1.00/1.00/0.50).

[比較例C1:聚醯胺酸溶液C1的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,6.54g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,9.61g),溶解於N,N-二甲基乙醯胺(DMAc,164.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液C1(PMDA/TFMB之莫耳比=1.00/1.00)。 [Comparative Example C1: Synthesis of Polyamic Acid Solution C1] Add pyromellitic dianhydride (PMDA, 6.54 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 9.61g), dissolved in N,N-dimethylacetamide (DMAc, 164.0g), stirred at 25°C for 24 hours, thereby obtaining polyamide acid solution C1 (PMDA/ Mole ratio of TFMB=1.00/1.00).

[比較例C2:聚醯胺酸溶液C2的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,4.85g)、SQN1(0.070g),溶解於N,N-二甲基乙醯胺(DMAc,67.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液C2(PMDA/SQN1/TFMB之莫耳比=0.99/0.01/1.00)。 [Comparative Example C2: Synthesis of Polyamic Acid Solution C2] While passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 4.85g), SQN1 (0.070g), dissolved in N,N-dimethylacetamide (DMAc, 67.0g), and stirred at 25°C for 24 hours to obtain polyamide Acid solution C2 (molar ratio of PMDA/SQN1/TFMB=0.99/0.01/1.00).

[比較例C3:聚醯胺酸溶液C3的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB,4.85g)、SQN2(0.081g),溶解於N,N-二甲基乙醯胺(DMAc,67.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液C3(PMDA/SQN2/TFMB之莫耳比=0.99/0.01/1.00)。 [Comparative Example C3: Synthesis of Polyamic Acid Solution C3] While passing nitrogen gas through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, pyromellitic dianhydride (PMDA, 3.27 g), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB, 4.85g), SQN2 (0.081g), dissolved in N,N-dimethylacetamide (DMAc, 67.0g), stirred at 25°C for 24 hours, thereby obtaining polyamide Acid solution C3 (molar ratio of PMDA/SQN2/TFMB=0.99/0.01/1.00).

[比較例D1:聚醯胺酸溶液D1的合成] 一邊使氮氣通過具備氮氣導入管、攪拌槳的反應器,一邊加入苯均四酸二酐(PMDA,3.27g)、4,4’-二胺基苯甲醯胺苯(DABA,3.41g),溶解於N,N-二甲基乙醯胺(DMAc,63.0g)後,在25℃下攪拌24小時,藉此得到聚醯胺酸溶液D1(PMDA/DABA之莫耳比=1.00/1.00)。 [Comparative Example D1: Synthesis of Polyamic Acid Solution D1] Pyromellitic dianhydride (PMDA, 3.27g) and 4,4'-diaminobenzamide benzene (DABA, 3.41g) were added while nitrogen was passed through a reactor equipped with a nitrogen gas introduction tube and a stirring blade, After dissolving in N,N-dimethylacetamide (DMAc, 63.0g), stir at 25°C for 24 hours to obtain polyamide acid solution D1 (molar ratio of PMDA/DABA=1.00/1.00) .

以下述方法將上述實施例及比較例中所得之聚醯胺酸溶液薄膜化,並測量光學特性、熱特性、機械特性。The polyamic acid solutions obtained in the above examples and comparative examples were thinned by the following method, and the optical properties, thermal properties, and mechanical properties were measured.

[實施例1] 使用澆鑄塗抹機將聚醯胺酸溶液A塗布於聚酯膜(A4100,東洋紡產品)上,在氮氣環境下以100℃×18分鐘進行加熱。以裁刀將所得之生胚膜裁斷之後,從聚酯膜剝離,固定於模框。在氮氣環境下,一邊以10℃/分鐘的速度階段性升溫,一邊以200℃×10分鐘、250℃×10分鐘、300℃×10分鐘、350℃×10分鐘順序加熱,藉此進行熱性醯亞胺化。放冷後,從模框取出,藉此得到聚醯亞胺膜。 [Example 1] The polyamic acid solution A was coated on a polyester film (A4100, manufactured by Toyobo) using a cast coater, and heated at 100° C. for 18 minutes in a nitrogen atmosphere. After cutting the resulting green film with a knife, it is peeled off from the polyester film and fixed on the frame. In a nitrogen atmosphere, heat up at a rate of 10°C/min in stages, while heating at 200°C for 10 minutes, 250°C for 10 minutes, 300°C for 10 minutes, and 350°C for 10 minutes. imidization. After standing to cool, the polyimide film was obtained by taking it out from the frame.

[實施例2~5] 在實施例1中,使用聚醯胺酸溶液B、Ca~Ce、D、B2代替聚醯胺酸溶液A,除此之外,與實施例1同樣地操作,得到聚醯亞胺膜。此時所使用的成分與評價結果顯示於表1。 [Embodiments 2-5] In Example 1, except having used polyamic-acid solution B, Ca-Ce, D, and B2 instead of polyamic-acid solution A, it carried out similarly to Example 1, and obtained the polyimide film. The components used at this time and the evaluation results are shown in Table 1.

[比較例1~9] 在實施例1中,使用聚醯胺酸溶液A1、B1、B4、B5、B6、C1、C2、C3、D1代替聚醯胺酸溶液A,除此之外,與實施例1同樣地操作,得到聚醯亞胺膜。此時所使用的成分與評價結果顯示於表1。 [表1] 實施例1 實施例2 實施例3a 實施例3b 實施例3c 實施例3d 實施例3e 實施例4 實施例5 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 比較例8 比較例9 聚醯胺酸溶液 A B Ca Cb Cc Cd Ce D B2 A1 B1 B4 B5 B6 C1 C2 C3 D1 酸成分 置入莫耳% CBDA 98.5 98.5 - - - - - - 95.5 100 100 100 100 100 - - - - PMDA - - 98.5 98 98 98 98.5 98.5 - - - - - - 100 99 99 100 二胺成分 置入莫耳% TFMB 100 - 100 100 100 100 100 - - 100 - - - - 100 100 100 - DABA - 100 - - - - - 100 100 - 100 100 100 100 - - - 100 矽倍半氧烷 置入莫耳% SQ1 1.5 1.5 1.5 1.5 4.5 - - - - - - - - - SQ3 - - - 2 - - - - - - - - - - - SQ4 2 SQ5 2 SQ9 1.5 SQ-109 - - - - - - - 1 15 50 - - - - SQN1 - - - - - - - - - - - 1 - - SQN2 - - - - - - - - - - - - 1 - 溶液外觀 特別記載事項 - - - - 有少量的 凝膠 - - - 白濁 白濁 - - - - 薄膜厚度 μm 7 13 15 18 17 19 17 13 13 15 15 17 26 26 15 15 15 15 總透光率 % 90.3 86.2 87.4 83.4 85.2 83.8 86.2 61.3 86.0 89.8 86.2 85.9 68.7 36.2 87.2 87.0 87.1 66.7 霧度 % 0.3 0.4 0.2 0.3 0.3 0.3 2.2 0.3 0.4 0.3 0.3 0.4 5.8 78.2 0.3 0.3 0.3 0.2 黃色指數 1.8 5.7 7.0 18.7 14.7 17.2 9.4 102.8 8.0 3.2 6.1 7.0 48.1 131.1 9.2 9.0 9.0 90.8 Tg 392 >450 >450 >450 >450 >450 >450 >450 >450 392 >450 >450 >450 >450 >450 >450 >450 >450 CTE ppm/K 34 16 8 7 5 1 0 5 26 33 11 17 25 40 6 8 10 4 抗張積 MPa・% 1320 1337 1440 1701 1757 1000 1020 3465 1512 628 1266 664 無法 測量 (脆) 無法 測量 (脆) 948 660 645 2964 破裂強度 MPa 165 191 240 243 251 250 170 231 189 157 211 166 237 220 215 247 破裂伸度 % 8 7 6 7 7 4 6 15 8 4 6 4 4 3 3 12 拉伸彈性 係數 GPa 5.2 6.8 7.6 7.6 7.6 7.6 7.6 7.7 6.7 5.3 8.3 6.8 7.8 7.7 7.7 7.7 [Comparative Examples 1 to 9] In Example 1, polyamic acid solutions A1, B1, B4, B5, B6, C1, C2, C3, and D1 were used instead of polyamic acid solution A, and In the same manner as in Example 1, a polyimide film was obtained. The components used at this time and the evaluation results are shown in Table 1. [Table 1] Example 1 Example 2 Example 3a Example 3b Example 3c Example 3d Example 3e Example 4 Example 5 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative Example 5 Comparative example 6 Comparative Example 7 Comparative Example 8 Comparative Example 9 polyamide solution A B Ca Cb Cc Cd Ce D. B2 A1 B1 B4 B5 B6 C1 C2 C3 D1 Acid component into mole% CBDA 98.5 98.5 - - - - - - 95.5 100 100 100 100 100 - - - - PMDA - - 98.5 98 98 98 98.5 98.5 - - - - - - 100 99 99 100 Diamine components into mole% TFMB 100 - 100 100 100 100 100 - - 100 - - - - 100 100 100 - DABA - 100 - - - - - 100 100 - 100 100 100 100 - - - 100 Sisesquioxane into mole % SQ1 1.5 1.5 1.5 1.5 4.5 - - - - - - - - - SQ3 - - - 2 - - - - - - - - - - - SQ4 2 SQ5 2 SQ9 1.5 SQ-109 - - - - - - - 1 15 50 - - - - SQN1 - - - - - - - - - - - 1 - - SQN2 - - - - - - - - - - - - 1 - Special Notes on Solution Appearance - - - - a small amount of gel - - - cloudy cloudy - - - - membrane thickness μm 7 13 15 18 17 19 17 13 13 15 15 17 26 26 15 15 15 15 Total light transmittance % 90.3 86.2 87.4 83.4 85.2 83.8 86.2 61.3 86.0 89.8 86.2 85.9 68.7 36.2 87.2 87.0 87.1 66.7 Haze % 0.3 0.4 0.2 0.3 0.3 0.3 2.2 0.3 0.4 0.3 0.3 0.4 5.8 78.2 0.3 0.3 0.3 0.2 yellow index 1.8 5.7 7.0 18.7 14.7 17.2 9.4 102.8 8.0 3.2 6.1 7.0 48.1 131.1 9.2 9.0 9.0 90.8 Tg 392 >450 >450 >450 >450 >450 >450 >450 >450 392 >450 >450 >450 >450 >450 >450 >450 >450 CTE ppm/K 34 16 8 7 5 1 0 5 26 33 11 17 25 40 6 8 10 4 Tensile product MPa・% 1320 1337 1440 1701 1757 1000 1020 3465 1512 628 1266 664 unmeasured (brittle) unmeasured (brittle) 948 660 645 2964 Bursting Strength MPa 165 191 240 243 251 250 170 231 189 157 211 166 237 220 215 247 elongation at break % 8 7 6 7 7 4 6 15 8 4 6 4 4 3 3 12 Tensile modulus GPa 5.2 6.8 7.6 7.6 7.6 7.6 7.6 7.7 6.7 5.3 8.3 6.8 7.8 7.7 7.7 7.7

如表1所示,結構中含有1莫耳%之SQ1的聚醯亞胺膜(實施例1、2、3a、4),相較於除了不含SQ1之外包含相同組成的聚醯亞胺膜(比較例1、2、6、9),呈現了大致相同的總透光率、霧度、黃色指數、Tg、CTE,且可知抗張積增大。As shown in Table 1, polyimide films containing 1 mol % of SQ1 in their structure (Examples 1, 2, 3a, 4) were compared to polyimide films containing the same composition except without SQ1 The films (Comparative Examples 1, 2, 6, and 9) showed approximately the same total light transmittance, haze, yellowness index, Tg, and CTE, and it was found that the tensile product increased.

若將實施例2、比較例3、比較例4、比較例5進行比較,混合不具有酸酐基之SQ-109以代替末端具有酸酐基之SQ1的情況中,隨著添加量增加至1%、15%、50%,觀察到聚醯胺酸溶液及聚醯亞胺膜的白濁。又,混合SQ-109的情況中,並未觀察到抗張積的增大,隨著添加量的增加,薄膜變脆。Comparing Example 2, Comparative Example 3, Comparative Example 4, and Comparative Example 5, in the case of mixing SQ-109 without acid anhydride groups instead of SQ1 with acid anhydride groups at the end, as the addition amount increases to 1%, 15% and 50%, white turbidity of the polyamic acid solution and the polyimide film was observed. Also, when SQ-109 was mixed, no increase in tensile product was observed, and the film became brittle as the added amount increased.

若將實施例3a~3e、比較例6、比較例7、比較例8進行比較,相較於比較例6,實施例3a~3e的抗張積提升,但比較例7、比較例8的抗張積與比較例6為相同程度。實施例3a、比較例7、比較例8皆係在結構中包含具有相同酸酐基(降莰烯酸酐)之矽倍半氧烷的聚醯亞胺,但實施例3a中所使用之SQ1係在酸酐基與矽倍半氧烷結構之間包含硫醚基,比較例7及比較例8中所使用之SQN1及SQN2不含硫醚基。此暗示了結構中包含硫醚基的矽倍半氧烷之共聚物有助於提升抗張積。 (應用例1) 將使膠質二氧化矽分散於NMP而成的分散體(日產化學工業製「Snowtex(註冊商標)NMP-ST-ZL」)以膠質二氧化矽(滑劑)量成為聚醯胺酸溶液中的高分子固體成分總量之0.3質量%的方式加入實施例Ca的溶液中以作為滑劑,在室溫下攪拌24小時。以此作為實施例Ca2溶液。 If Examples 3a~3e, Comparative Example 6, Comparative Example 7, and Comparative Example 8 are compared, compared with Comparative Example 6, the tensile products of Examples 3a~3e are improved, but the tensile products of Comparative Example 7 and Comparative Example 8 are The tension product is at the same level as that of Comparative Example 6. Example 3a, Comparative Example 7, and Comparative Example 8 are all polyimides containing silsesquioxane with the same anhydride group (norcamphenic anhydride) in the structure, but the SQ1 used in Example 3a is in The anhydride group and the silsesquioxane structure contain a thioether group, and SQN1 and SQN2 used in Comparative Example 7 and Comparative Example 8 do not contain a thioether group. This suggests that the copolymer of silsesquioxane containing thioether groups in its structure contributes to the increase in tensile strength. (Application example 1) A dispersion obtained by dispersing colloidal silica in NMP ("Snowtex (registered trademark) NMP-ST-ZL" manufactured by Nissan Chemical Industry Co., Ltd.) 0.3% by mass of the total polymer solid content was added to the solution of Example Ca as a slip agent, and stirred at room temperature for 24 hours. Use this as the example Ca2 solution.

接著,使用點塗法將實施例Ca2的溶液以最終膜厚成為1.5μm的方式塗布於聚對苯二甲酸乙二酯製薄膜A4100(東洋紡股份有限公司製)的無滑材面上,然後藉由模塗機將實施例Ca溶液以最終膜厚成為22μm的方式塗布於實施例Ca2溶液之上。將其於110℃乾燥10分鐘。將乾燥後得到自我支撐性的聚醯胺酸膜從作為支撐體的A4100膜剝離,使其通過具有配置了針之針板的針梳拉幅機,將薄膜端部插在針上以進行載持,以避免膜破裂且避免產生不必要之鬆弛的方式調整針板間隔並進行運送,以200℃3分鐘、250℃3分鐘、300℃3分鐘、400℃3分鐘的條件加熱,使其進行醯亞胺化反應。之後以2分鐘冷卻至室溫,以切割器切掉薄膜兩端平面性不佳的部分,捲成滾筒狀,得到500m的寬度450mm之聚醯亞胺膜A1。 (應用例2) 首先,將實施例3a(PMDA/TFMB/SQ1)中所得之聚醯亞胺膜裁切成360mm×460mm的長方形。接著使用UV/O 3照射器(LAN technical製SKR1102N-03)進行UV/O 3照射3分鐘以作為薄膜表面處理。此時UV/O 3燈與薄膜的距離設為30mm。 Next, the solution of Example Ca2 was applied to the non-slip surface of polyethylene terephthalate film A4100 (manufactured by Toyobo Co., Ltd.) so that the final film thickness became 1.5 μm by a spot coating method, and then The example Ca solution was coated on the example Ca2 solution with a die coater so that the final film thickness would be 22 μm. It was dried at 110° C. for 10 minutes. The self-supporting polyamide film obtained after drying was peeled off from the A4100 film as a support, passed through a pin tenter equipped with a needle plate equipped with pins, and the end of the film was inserted into the pins to carry out Hold to avoid film rupture and avoid unnecessary slack, adjust the needle plate interval and transport, heat at 200°C for 3 minutes, 250°C for 3 minutes, 300°C for 3 minutes, and 400°C for 3 minutes to make it imidization reaction. After that, it was cooled to room temperature for 2 minutes, and the parts with poor planarity at both ends of the film were cut off with a cutter, and rolled into a roll to obtain a polyimide film A1 with a width of 500 m and a width of 450 mm. (Application Example 2) First, the polyimide film obtained in Example 3a (PMDA/TFMB/SQ1) was cut into a rectangle of 360 mm×460 mm. Next, UV/O 3 was irradiated for 3 minutes using a UV/O 3 irradiator (SKR1102N-03 manufactured by LAN Technical) as a film surface treatment. At this time, the distance between the UV/O 3 lamp and the film was set to 30 mm.

以噴塗機將作為矽烷偶合劑的3-胺基丙基三甲氧基矽烷(信越化學工業公司製,KBM-903)塗布於顯示器用玻璃(370mm×470mm,厚度0.7mm的玻璃基板:日本電氣硝子公司製OA10G)上。另外,玻璃基板係使用在以純水清洗並乾燥後藉由UV/O 3照射器(LAN technical製SKR1102N-03)照射1分鐘以進行乾式清洗者。 3-Aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-903) as a silane coupling agent is coated on a display glass (370mm×470mm, glass substrate with a thickness of 0.7mm: NEC Glass) with a sprayer company-made OA10G). In addition, what was used for the glass substrate was dry-cleaned by irradiating for 1 minute with a UV/O 3 irradiator (SKR1102N-03 manufactured by LAN Technical) after washing with pure water and drying.

接著,將塗有矽烷偶合劑的玻璃基板設置於配備有聚矽氧橡膠滾軸的輥層壓機,首先以滴管將500ml的純水以在基板整體上展開的方式滴在矽烷偶合劑塗布面上,以將基板潤濕。Next, set the glass substrate coated with the silane coupling agent on a roll laminator equipped with a silicone rubber roller, and first use a dropper to drop 500ml of pure water onto the entire substrate to spread the silane coupling agent coating surface to wet the substrate.

將已進行前述表面處理的聚醯亞胺膜之表面處理面以與玻璃基板之矽烷偶合劑塗布面、亦即與經純水潤濕的面呈對向的方式重疊,從玻璃基板之一面的一邊開始,依序以旋轉輥一邊將聚醯亞胺膜與玻璃基板之間的純水擠出一邊進行加壓,將玻璃基板與聚醯亞胺膜疊層,得到暫時積層體。所使用的層壓機係MCK公司製的有效輥寬度650mm的層壓機,貼合條件為空氣源壓力:0.5MPa,疊層速度:50mm/秒,輥溫度:22℃,環境溫度22度,濕度55%RH。The surface-treated surface of the polyimide film that has undergone the above-mentioned surface treatment is overlapped with the silane coupling agent-coated surface of the glass substrate, that is, the surface wetted with pure water. From the beginning, pressurize while extruding pure water between the polyimide film and the glass substrate with rotating rollers sequentially, and laminate the glass substrate and polyimide film to obtain a temporary laminate. The laminator used is a laminator with an effective roll width of 650mm manufactured by MCK Company. The lamination conditions are air source pressure: 0.5MPa, lamination speed: 50mm/s, roll temperature: 22°C, ambient temperature: 22°C, Humidity 55%RH.

將所得之暫時積層體在潔淨烘箱中於200℃進行加熱處理10分鐘,得到包含聚醯亞胺膜與玻璃基板的積層體。The obtained temporary laminate was heat-treated in a clean oven at 200° C. for 10 minutes to obtain a laminate including a polyimide film and a glass substrate.

以下述步驟在所得之積層體的聚醯亞胺膜面上形成鎢膜(膜厚75nm),進一步在不接觸大氣的情況下積層形成氧化矽膜(膜厚150nm)以作為絕緣膜。接著,以電漿CVD法形成作為基底絕緣膜的氧化氮化矽膜(膜厚100nm),進一步在不接觸大氣的情況下積層形成非晶矽膜(膜厚54nm)。A tungsten film (film thickness 75nm) was formed on the polyimide film surface of the obtained laminate in the following steps, and a silicon oxide film (film thickness 150nm) was further laminated and formed as an insulating film without exposure to the atmosphere. Next, a silicon oxide nitride film (thickness: 100nm) was formed as a base insulating film by plasma CVD, and an amorphous silicon film (thickness: 54nm) was further laminated without exposure to the atmosphere.

使用所得之非晶矽膜製作TFT元件。首先,對於非晶矽膜進行圖案化而形成既定形狀的矽區域,適當進行閘極絕緣膜的形成、閘極電極的形成、對於活性區域摻雜而形成源極區域或汲極區域、層間絕緣膜的形成、源極電極及汲極電極的形成及活性化處理,製作P通道TFT陣列。The obtained amorphous silicon film is used to fabricate TFT elements. First, the amorphous silicon film is patterned to form a silicon region of a predetermined shape, and the formation of the gate insulating film, the formation of the gate electrode, the doping of the active region to form the source region or the drain region, and the interlayer insulation are performed appropriately. Formation of film, formation of source electrode and drain electrode and activation treatment, making P-channel TFT array.

沿著TFT陣列外周向內0.5mm左右,以UV-YAG雷射將聚醯亞胺膜部燒斷,從斷開處的端部,使用薄剃刀狀的刀片以掀起的方式進行剝離,得到可撓性的A3尺寸之TFT陣列。以極微小的力即可進行剝離,而能夠在不損及TFT的情況下進行剝離。所得之可撓式TFT陣列,即使捲繞於5mmφ的圓棒上,亦未見性能劣化,維持了良好的特性。 [產業上利用之可能性] About 0.5mm inward along the outer circumference of the TFT array, the polyimide film was burnt with UV-YAG laser, and peeled off from the broken end with a thin razor-like blade to obtain Flexible A3 size TFT array. It can be peeled off with a very small force, and it can be peeled off without damaging the TFT. Even if the obtained flexible TFT array was wound on a 5mmφ round rod, no deterioration in performance was seen, and good characteristics were maintained. [Possibility of industrial use]

如以上所述,本發明的聚醯亞胺膜,相較於不含矽倍半氧烷化合物的情況,顯示了一方面維持相同水準的光學特性、熱特性,一方面具有良好的機械特性。本發明的聚醯亞胺膜具有優良的光學特性、無色透明性且機械特性優良,並且展現較低的CTE,因此在將該薄膜貼合於玻璃等平面上且具有剛性之無機基板之後在薄膜上進行各種電子元件加工,最後再將其從無機基板剝離,藉此可製作可撓性電子元件。As described above, the polyimide film of the present invention exhibits good mechanical properties while maintaining the same level of optical and thermal properties as compared to the case of not containing the silsesquioxane compound. The polyimide film of the present invention has excellent optical properties, colorless transparency and excellent mechanical properties, and exhibits a lower CTE, so after the film is bonded to a flat inorganic substrate such as glass and has rigidity, the film Various electronic components are processed on it, and finally it is peeled off from the inorganic substrate, so that flexible electronic components can be produced.

none

圖1係顯示合成例2-1中所使用的SQ109(PGMEA溶液)的 1HNMR(CDCl 3)光譜的圖。 圖2係顯示PGMEA的 1HNMR(CDCl 3)光譜的圖。另外,δ=2.2係來自用以清洗器具之丙酮的峰值。 圖3係顯示合成例2-1中所使用的降莰烯酸酐的 1HNMR(CDCl 3)光譜的圖。另外,δ=2.2係來自用以清洗器具之丙酮的峰值。 圖4係顯示合成例2-1中的反應後之反應混合物的 1HNMR(CDCl 3)光譜的圖。 圖5係顯示合成例2-2中所得之具有酸酐基之矽倍半氧烷SQ2的 1HNMR(CDCl 3)光譜的圖。 圖6係顯示合成例2-3中所得之具有酸酐基之矽倍半氧烷SQ3的 1HNMR(DMSO-d 6)光譜的圖。 圖7係顯示合成例2-4中所得之具有酸酐基之矽倍半氧烷SQ4的 1HNMR(DMSO-d 6)光譜的圖。 圖8係顯示合成例2-5中所得之具有酸酐基之矽倍半氧烷SQ5的 1HNMR(DMSO-d 6)光譜的圖。 圖9係顯示合成例2-6中所得之具有酸酐基之矽倍半氧烷SQ6的 1HNMR(DMSO-d 6)光譜的圖。 圖10係顯示合成例2-7中所得之具有酸酐基之矽倍半氧烷SQ7的 1HNMR(DMSO-d 6)光譜的圖。 圖11係顯示合成例2-8中所得之具有酸酐基之矽倍半氧烷SQ8的 1HNMR(DMSO-d 6)光譜的圖。 Fig. 1 is a graph showing the 1 HNMR (CDCl 3 ) spectrum of SQ109 (PGMEA solution) used in Synthesis Example 2-1. Figure 2 is a graph showing the 1 HNMR (CDCl 3 ) spectrum of PGMEA. In addition, δ=2.2 is the peak from the acetone used to clean the utensils. Fig. 3 is a graph showing the 1 HNMR (CDCl 3 ) spectrum of norbornene anhydride used in Synthesis Example 2-1. In addition, δ=2.2 is the peak from the acetone used to clean the utensils. Fig. 4 is a graph showing the 1 HNMR (CDCl 3 ) spectrum of the reaction mixture after the reaction in Synthesis Example 2-1. Fig. 5 is a graph showing the 1 HNMR (CDCl 3 ) spectrum of silsesquioxane SQ2 having an acid anhydride group obtained in Synthesis Example 2-2. Fig. 6 is a graph showing the 1 H NMR (DMSO-d 6 ) spectrum of silsesquioxane SQ3 having an acid anhydride group obtained in Synthesis Example 2-3. Fig. 7 is a graph showing the 1 H NMR (DMSO-d 6 ) spectrum of silsesquioxane SQ4 having an acid anhydride group obtained in Synthesis Example 2-4. Fig. 8 is a graph showing the 1 H NMR (DMSO-d 6 ) spectrum of silsesquioxane SQ5 having an acid anhydride group obtained in Synthesis Example 2-5. Fig. 9 is a graph showing the 1 H NMR (DMSO-d 6 ) spectrum of silsesquioxane SQ6 having an acid anhydride group obtained in Synthesis Example 2-6. Fig. 10 is a graph showing the 1 H NMR (DMSO-d 6 ) spectrum of silsesquioxane SQ7 having an acid anhydride group obtained in Synthesis Example 2-7. Fig. 11 is a graph showing the 1 H NMR (DMSO-d 6 ) spectrum of silsesquioxane SQ8 having an acid anhydride group obtained in Synthesis Example 2-8.

無。none.

Claims (15)

一種聚醯胺酸,其係至少羧酸類、二胺類與具有二羧酸酐基之矽倍半氧烷化合物A的共聚合反應物,其中, 該矽倍半氧烷化合物A係由下述a1與a2之縮合物B的硫醇基與二羧酸酐C的反應性基反應而成之矽倍半氧烷化合物A; 通式:R 1Si(OR 2) 3表示的含硫醇基之三烷氧基矽烷類a1 (式中,R 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基的至少一個氫被取代為硫醇基的有機基,R 2相互獨立地表示氫原子、碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基); 不具有硫醇基的三烷氧基矽烷類a2; 該二羧酸酐C之反應性基係選自乙烯基、烯基、環烯基、炔基及醯氯基之中的至少一種反應性基。 A kind of polyamic acid, it is the copolymerization reactant of at least carboxylic acid, diamines and the silsesquioxane compound A that has dicarboxylic acid anhydride group, wherein, this silsesquioxane compound A is by following a1 The silsesquioxane compound A formed by reacting the thiol group of the condensate B of a2 with the reactive group of the dicarboxylic anhydride C; general formula: the third thiol group represented by R 1 Si(OR 2 ) 3 Alkoxysilanes a1 (wherein, R 1 represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or at least one hydrogen of an aromatic hydrocarbon group with 6 to 8 carbons is replaced by An organic group of a thiol group, R2 independently represent a hydrogen atom, an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons or an aromatic hydrocarbon group with 6 to 8 carbons); Thiol-based trialkoxysilanes a2; The reactive group of the dicarboxylic acid anhydride C is at least one reactive group selected from vinyl, alkenyl, cycloalkenyl, alkynyl and acyl chloride. 一種聚醯胺酸,其係至少羧酸類、二胺類與具有二羧酸酐基之矽倍半氧烷化合物A的共聚合反應物,其中, 該矽倍半氧烷化合物A具有下述通式(1)及(2)表示的結構單元:
Figure 03_image001
(式中,Q 1表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基,Q 2為單鍵、碳數1~8的烴基、碳數1~8的烴基中的一個以上之碳原子被氧所取代的有機基或羰基,X為碳-碳鍵或是碳數4~10的脂肪族環、碳數6~10的芳香族環、或是構成此等之碳的一部分被氧或硫所取代的雜環;與此等鍵結之氫的一個以上亦可被烴基所取代;1.0≤m≤2.0;1.4≤n≤1.6);
Figure 03_image003
(式中,Q 3表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基;1.4≤n≤1.6)。
A polyamic acid, which is a copolymerization reaction product of at least carboxylic acids, diamines and a silsesquioxane compound A having a dicarboxylic anhydride group, wherein the silsesquioxane compound A has the following general formula Structural units represented by (1) and (2):
Figure 03_image001
(wherein, Q 1 represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons, Q 2 is a single bond, an aliphatic hydrocarbon with 1 to 8 carbons Hydrocarbon group, organic group or carbonyl group in which one or more carbon atoms in the hydrocarbon group with 1 to 8 carbon atoms is replaced by oxygen, X is a carbon-carbon bond or an aliphatic ring with 4 to 10 carbon atoms, and an organic group with 6 to 10 carbon atoms Aromatic rings, or heterocyclic rings in which part of the carbon constituting them is replaced by oxygen or sulfur; one or more of the hydrogens bonded to these rings may also be replaced by hydrocarbon groups; 1.0≤m≤2.0; 1.4≤n≤ 1.6);
Figure 03_image003
(wherein, Q represents an aliphatic hydrocarbon group with 1 to 8 carbons, an alicyclic hydrocarbon group with 4 to 8 carbons, or an aromatic hydrocarbon group with 6 to 8 carbons; 1.4≤n≤1.6).
如請求項1或2之聚醯胺酸,其中該矽倍半氧烷化合物A中的該三烷氧基矽烷類a2之莫耳比([a2的莫耳數]/[a1的莫耳數+a2的莫耳數])或通式(2)表示的結構單元之莫耳比([結構單元(2)]/[結構單元(1)+結構單元(2)])為0.1以上0.7以下。The polyamic acid as claimed in claim 1 or 2, wherein the molar ratio of the trialkoxysilanes a2 in the silsesquioxane compound A ([the molar number of a2]/[the molar number of a1 + the molar number of a2]) or the molar ratio of the structural unit represented by the general formula (2) ([structural unit (2)]/[structural unit (1)+structural unit (2)]) is 0.1 to 0.7 . 如請求項1或3之聚醯胺酸,其中該二羧酸酐C為選自下述之化學式表示的化合物:
Figure 03_image005
(式中,Rx表示碳數1~8的脂肪族烴基、碳數4~8的脂環式烴基或碳數6~8的芳香族烴基)。
The polyamic acid as claimed in item 1 or 3, wherein the dicarboxylic anhydride C is a compound selected from the following chemical formulas:
Figure 03_image005
(In the formula, Rx represents an aliphatic hydrocarbon group having 1 to 8 carbons, an alicyclic hydrocarbon group having 4 to 8 carbons, or an aromatic hydrocarbon group having 6 to 8 carbons).
如請求項1至4中任一項之聚醯胺酸,其中以源自該矽倍半氧烷化合物A的結構單元之2價單體作為基準的莫耳含有率:(nA/(nA+nD))×100(此處,nA係以源自該矽倍半氧烷化合物A之結構單元的總莫耳數除以該二羧酸酐基之總數再乘以2倍而得到的數值;nD係源自該羧酸類之結構單元的莫耳數)為0.01~10.0莫耳%。The polyamic acid according to any one of claims 1 to 4, wherein the molar content of the divalent monomer derived from the structural unit of the silsesquioxane compound A as a benchmark: (nA/(nA+ nD))×100 (herein, nA is the value obtained by dividing the total number of moles of structural units derived from the silsesquioxane compound A by the total number of the dicarboxylic anhydride groups and multiplying by 2 times; nD is the number of moles of structural units derived from the carboxylic acids) is 0.01 to 10.0 mole%. 如請求項1至5中任一項之聚醯胺酸,其中該羧酸類係選自下述之化學式表示的一種以上之化合物:
Figure 03_image007
The polyamic acid according to any one of claims 1 to 5, wherein the carboxylic acids are selected from more than one compound represented by the following chemical formula:
Figure 03_image007
.
如請求項1至6中任一項之聚醯胺酸,其中該二胺類包含4,4’-二胺基-2,2’-雙(三氟甲基)聯苯(TFMB)或4,4’-二胺基苯甲醯胺苯(DABA)。The polyamic acid according to any one of claims 1 to 6, wherein the diamines comprise 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl (TFMB) or 4 ,4'-Diaminobenzamidobenzene (DABA). 一種聚醯胺酸組成物,其包含如請求項1至7中任一項之聚醯胺酸與溶劑。A polyamic acid composition comprising the polyamic acid according to any one of claims 1 to 7 and a solvent. 一種聚醯亞胺,其係由如請求項1至7中任一項之聚醯胺酸進行醯亞胺化而成。A polyimide, which is formed by imidization of the polyamic acid according to any one of claims 1 to 7. 一種聚醯亞胺膜,其包含如請求項9之聚醯亞胺。A polyimide film comprising the polyimide according to claim 9. 如請求項10之聚醯亞胺膜,其線膨脹係數為40ppm/K以下、-20ppm/K以上。For example, the polyimide film according to Claim 10 has a coefficient of linear expansion of 40 ppm/K or less and -20 ppm/K or more. 如請求項10或11之聚醯亞胺膜,其在拉伸試驗中的抗張積為1,000MPa・%以上、10,000 MPa・%以下。The polyimide film according to claim 10 or 11, wherein the tensile product in the tensile test is not less than 1,000 MPa·% and not more than 10,000 MPa·%. 一種積層體,其包含如請求項10至12中任一項之聚醯亞胺膜與無機基板。A laminate comprising the polyimide film and the inorganic substrate according to any one of claims 10 to 12. 一種可撓式電子元件的製造方法,其包含: 在如請求項13之積層體的聚醯亞胺膜面上形成電子元件的步驟;及 將該無機基板剝離的步驟。 A method of manufacturing a flexible electronic component, comprising: The step of forming electronic components on the polyimide film surface of the laminate as claimed in claim 13; and A step of peeling off the inorganic substrate. 一種可撓式電子元件,其包含如請求項10至12中任一項之聚醯亞胺膜與形成於該聚醯亞胺膜上的電子元件。A flexible electronic component comprising the polyimide film according to any one of claims 10 to 12 and an electronic component formed on the polyimide film.
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