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TW202123532A - Antenna device and manufacturing method thereof - Google Patents

Antenna device and manufacturing method thereof Download PDF

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Publication number
TW202123532A
TW202123532A TW109132866A TW109132866A TW202123532A TW 202123532 A TW202123532 A TW 202123532A TW 109132866 A TW109132866 A TW 109132866A TW 109132866 A TW109132866 A TW 109132866A TW 202123532 A TW202123532 A TW 202123532A
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substrate
antenna
chip
wafer
groove
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TW109132866A
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Chinese (zh)
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TWI788705B (en
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陳忠宏
賴一丞
鄭翔及
郭世斌
馬丁 傑佛瑞 史凱特古德
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友達光電股份有限公司
德商Ses Rfid解決方案有限公司
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Priority to CN202011444190.8A priority Critical patent/CN112652880B/en
Priority to US17/114,509 priority patent/US11600912B2/en
Publication of TW202123532A publication Critical patent/TW202123532A/en
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Publication of TWI788705B publication Critical patent/TWI788705B/en

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Abstract

An antenna device includes a substrate, a chip, and an antenna. The chip is disposed on the substrate, and the chip has at least two pads. The antenna is disposed on the substrate, and the chip is disposed between the substrate and the antenna. The antenna has a first bonding line segment and a second bonding line segment electrically connecting to at least two pads respectively. The first bonding line segment is located on the outermost of the antenna to across the short-side direction of the chip with completely overlapping one of the at least two pads. The second bonding line segment is located on the innermost of the antenna to across the short-side direction of the chip with completely overlapping the other one of the at least two pads.

Description

天線裝置及其製造方法Antenna device and manufacturing method thereof

本發明是有關於一種無線通訊裝置,且特別是有關於一種天線裝置及其製造方法。The present invention relates to a wireless communication device, and more particularly to an antenna device and a manufacturing method thereof.

無線射頻識別(Radio Frequency Identification,RFID)裝置具有便利性。隨著時代的進展,無線射頻識別裝置被廣泛應用於各種領域中,如物流管理、倉儲管理、或身分識別等。Radio Frequency Identification (RFID) devices are convenient. With the progress of the times, radio frequency identification devices are widely used in various fields, such as logistics management, warehouse management, or identity recognition.

然而,在一些無線射頻識別裝置中,由於使用了天線基板來承載天線、且積體電路(integrated circuit,IC)晶片與天線基板之間存在間隙,使得無線射頻識別裝置整體的厚度較厚且容易產生IC晶片破裂與天線與晶片接點斷裂等問題。另外,若無線射頻識別裝置中使用可撓性積體電路(flexible integrated circuit)晶片或塑膠積體電路(plastic integrated circuit)晶片等IC晶片,在製造過程中,由於在將所述積體電路晶片接合於天線基板時,需要較傳統積體電路晶片更大的壓力及較長的壓合時間進行接合,如此一來存在壓力過大而使晶片容易產生破裂、天線容易斷線、及熱壓接合製程時間較長等問題。因此,目前亟需一種能解決前述問題的方法。However, in some radio frequency identification devices, because the antenna substrate is used to carry the antenna, and there is a gap between the integrated circuit (IC) chip and the antenna substrate, the overall thickness of the radio frequency identification device is thicker and easier. Problems such as IC chip breakage and antenna and chip contact breakage occur. In addition, if an IC chip such as a flexible integrated circuit chip or a plastic integrated circuit chip is used in the radio frequency identification device, during the manufacturing process, the integrated circuit chip is When bonding to the antenna substrate, it requires greater pressure and longer bonding time than traditional integrated circuit chips. As a result, the pressure is too high and the chip is prone to cracks, the antenna is easily broken, and the thermal compression bonding process Long time and other issues. Therefore, there is an urgent need for a method that can solve the aforementioned problems.

本發明提供一種天線裝置,可以防止晶片破裂、天線斷線等問題產生。The present invention provides an antenna device, which can prevent problems such as chip breakage and antenna disconnection.

本發明另提供一種天線裝置的製造方法,能製作出可防止晶片破裂、天線斷線等問題產生的天線裝置,從而提升天線裝置的良率。The present invention also provides a method for manufacturing an antenna device, which can produce an antenna device that can prevent problems such as chip cracking, antenna disconnection, etc., thereby improving the yield of the antenna device.

本發明的至少一實施例提供一種天線裝置,包括基板、晶片以及天線。晶片設置於基板上,且具有至少兩個接墊。天線設置於基板上,且晶片位於基板與天線之間。天線具有分別與至少兩個接墊電性連接的第一接合線段及第二接合線段。第一接合線段位於天線最外圈,以完整覆蓋至少兩個接墊的一者的方式橫跨晶片的短邊方向。第二接合線段位於天線最內圈,以完整覆蓋至少兩個接墊的另一者的方式橫跨晶片的短邊方向。At least one embodiment of the present invention provides an antenna device including a substrate, a chip, and an antenna. The chip is arranged on the substrate and has at least two pads. The antenna is arranged on the substrate, and the chip is located between the substrate and the antenna. The antenna has a first bonding wire segment and a second bonding wire segment electrically connected to at least two pads, respectively. The first bonding wire segment is located at the outermost circle of the antenna and traverses the short side direction of the chip in a manner of completely covering one of the at least two pads. The second bonding wire segment is located at the innermost circle of the antenna and traverses the short side direction of the chip in a manner of completely covering the other of the at least two pads.

本發明的至少一實施例提供一種天線裝置的製造方法,包括基板準備步驟、晶片放置步驟及天線形成步驟等步驟。在基板準備步驟中形成基板。在晶片放置步驟中,基板以捲對捲的方式移動,並將晶片放置於基板上,且晶片具有至少兩個接墊。並且,晶片的短邊方向與基板的移動方向之間具有夾角,其中夾角小於或等於45度。在天線形成步驟中,形成天線於基板上,且晶片位於基板與天線之間。並且,天線具有分別與至少兩個接墊電性連接的第一接合線段及第二接合線段,其中第一接合線段位於天線最外圈,以完整覆蓋至少兩個接墊的一者的方式橫跨晶片的短邊方向;第二接合線段位於天線最內圈,以完整覆蓋至少兩個接墊的另一者的方式橫跨晶片的短邊方向。At least one embodiment of the present invention provides a manufacturing method of an antenna device, which includes steps such as a substrate preparation step, a wafer placement step, and an antenna formation step. The substrate is formed in the substrate preparation step. In the wafer placing step, the substrate is moved in a roll-to-roll manner, and the wafer is placed on the substrate, and the wafer has at least two pads. In addition, there is an included angle between the short side direction of the wafer and the moving direction of the substrate, wherein the included angle is less than or equal to 45 degrees. In the antenna forming step, the antenna is formed on the substrate, and the chip is located between the substrate and the antenna. In addition, the antenna has a first bonding wire segment and a second bonding wire segment electrically connected to at least two pads, wherein the first bonding wire segment is located at the outermost circle of the antenna, and horizontally covers one of the at least two pads. Across the short-side direction of the chip; the second bonding wire segment is located at the innermost circle of the antenna, and crosses the short-side direction of the chip in a manner that completely covers the other of the at least two pads.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

在整個說明書中,相同的附圖標記表示相同或類似的元件。在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。應當理解,當諸如層、膜、區域或基板的元件被稱為「在另一元件上」時,其可以直接在另一元件上,或者中間元件可以也存在。二元件互相「電性連接」可為二元件間存在其它元件。Throughout the specification, the same reference numerals indicate the same or similar elements. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on another element," it can be directly on the other element, or intervening elements may also be present. The "electrical connection" of two components to each other can mean that there are other components between the two components.

應當理解,儘管術語「第一」與「第二」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。It should be understood that although the terms "first" and "second" etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, and/or parts should not be affected by Limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section.

這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式「一」和「一個」旨在包括複數形式,包括「至少一個」。「至少兩個的一者」旨在表示複數形式中的至少一部分,其數量可為單數亦可為複數、而「至少兩個的另一者」表示除前述部分以外的另一部分,其數量可為單數亦可為複數。「或」表示「及/或」。還應當理解,當在本說明書中使用時,術語「包括」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used here is only for the purpose of describing specific embodiments and is not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "one" and "one" are intended to include plural forms, including "at least one." "One of at least two" is intended to mean at least a part of the plural form, the number of which may be singular or plural, and "the other of at least two" means another part other than the aforementioned part, the number of which may be It may be singular or plural. "Or" means "and/or". It should also be understood that when used in this specification, the terms "including" and/or "including" designate the presence of the features, regions, wholes, steps, operations, elements, and/or components, but do not exclude one or more The existence or addition of other features, regions as a whole, steps, operations, elements, components, and/or combinations thereof.

此外,諸如「下」或「底面」和「上」或「頂面」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「上」或「下」可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom surface" and "upper" or "top surface" may be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" or "below" other elements will be oriented "above" the other elements. Thus, the exemplary terms "upper" or "lower" can include an orientation of above and below.

本文使用的「約」或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」或「實質上」可以表示在所述值的一個或多個標準偏差內,或±30%、20%、10%、5%內。再者,本文使用的「約」或「實質上」可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about" or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the error associated with the measurement A specific number (ie, the limit of the measurement system). For example, "about" or "substantially" can mean within one or more standard deviations of the stated value, or within ±30%, 20%, 10%, 5%. Furthermore, the "about" or "substantially" used herein can select a more acceptable deviation range or standard deviation based on optical properties, etching properties, or other properties, and not one standard deviation can be used for all properties.

除非另有定義,本文使用的所有術語包括技術和科學術語具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

圖1A是依照本發明的第一實施例的一種天線裝置的上視示意圖;圖1B為沿著圖1A中的X1-X2線段的局部剖面示意圖;圖1C為沿著圖1A的Y1-Y2線段的剖面示意圖。為方便說明,圖1A中以虛線表示第一接墊212、第二接墊214、第三接墊216與第四接墊218的位置。並且為使圖式更清楚,以另一虛線表示保護層500的位置。Fig. 1A is a schematic top view of an antenna device according to the first embodiment of the present invention; Fig. 1B is a schematic partial cross-sectional view along the line X1-X2 in Fig. 1A; Fig. 1C is a schematic view along the line Y1-Y2 in Fig. 1A Schematic diagram of the cross-section. For the convenience of description, the positions of the first pad 212, the second pad 214, the third pad 216, and the fourth pad 218 are indicated by dotted lines in FIG. 1A. In order to make the drawing clearer, another dashed line is used to indicate the position of the protective layer 500.

請參照圖1A至圖1C,天線裝置10包括基板100、晶片200、以及天線300。晶片200位於基板100與天線300之間,晶片200經由設置於其主動面200a上的接墊210而與天線300接合。具體而言,如圖1B所示,晶片200例如以主動面200a朝上(即晶片200的背面面向基板100)的方式設置於基板100上,天線300設置於基板100與晶片200上,且天線300設置接合至晶片200。1A to 1C, the antenna device 10 includes a substrate 100, a chip 200, and an antenna 300. The chip 200 is located between the substrate 100 and the antenna 300, and the chip 200 is bonded to the antenna 300 via the pad 210 provided on the active surface 200a thereof. Specifically, as shown in FIG. 1B, the chip 200 is disposed on the substrate 100 such that the active surface 200a faces upward (that is, the back surface of the chip 200 faces the substrate 100), the antenna 300 is disposed on the substrate 100 and the chip 200, and the antenna 300 is arranged to be bonded to wafer 200.

基板100可為可撓式基板。在本實施例中,基板100的材料可包括紙、聚乙烯對苯二甲酸酯(polyethylene terephthalate,PET)、聚氯乙烯(polyvinyl chloride,PVC)、塑膠膜、或其他適宜的材料等,本領域普通技術人員可依據設計需求選用基板100的材料,本發明並不以此為限。舉例來說,當將天線裝置10用於包裝盒(如牛奶盒、紙袋、餅乾袋等)上時,基板100例如為用於形成包裝盒的基材(如紙、牛皮紙、塑膠等)。The substrate 100 may be a flexible substrate. In this embodiment, the material of the substrate 100 may include paper, polyethylene terephthalate (PET), polyvinyl chloride (PVC), plastic film, or other suitable materials, etc. Those of ordinary skill in the art can select the material of the substrate 100 according to design requirements, and the present invention is not limited thereto. For example, when the antenna device 10 is used on a packaging box (such as a milk box, a paper bag, a biscuit bag, etc.), the substrate 100 is, for example, a substrate (such as paper, kraft paper, plastic, etc.) used to form the packaging box.

晶片200可包括兩個以上的接墊210,其中接墊210設置於晶片200的主動面200a上。舉例來說,接墊210例如包括第一接墊212、第二接墊214、第三接墊216與第四接墊218。請參照圖1B,在晶片200的短邊方向D1上,第一接墊212與第二接墊214例如位於主動面200a的一短邊上,且沿短邊方向D1而分別設置於鄰近晶片200的長邊的兩端,且第一接墊212與第二接墊214在俯視方向上與天線300的最外圈重疊。在本實施例中,於晶片200的另一短邊上可設置第三接墊216與第四接墊218,其中第三接墊216與第四接墊218例如沿短邊方向D1而分別設置於鄰近晶片200的長邊的兩端(如圖1A所示),且第三接墊216與第四接墊218在俯視方向上與天線300的最內圈重疊。需注意的是,雖然圖1B所繪示在晶片各短邊上的接墊數量以2個為例,但本發明不以此為限。在其他實施例中,晶片在各短邊的接墊數量也可以是1個或大於等於2個,接墊的型態亦可以視不同的電性連接方式而進行調整,詳於後文說明。請參照圖1C,在晶片200的長邊方向D2上,第三接墊216例如相對於第一接墊212而位於主動面200a沿長邊方向D2的一端。第四接墊218例如相對於第二接墊214而位於主動面200a沿長邊方向D2的一端(如圖1A所示)。在本實施例中,晶片200可為以塑膠為基底的積體電路元件,即為將主動元件與電路形成於如塑膠等可撓式基板上的晶片型態。主動面200a為包括薄膜電晶體TFT等積體電路的形成表面,在本實施例中,第一接墊212、第二接墊214、第三接墊216與第四接墊218可作為電性連接至晶片200內部積體電路的接點。第一接墊212、第二接墊214、第三接墊216與第四接墊218的材料包括導電材料,例如金、銀、銅、鋁、鉬、鈦或其他金屬或包含前述金屬的合金。The chip 200 may include more than two pads 210, wherein the pads 210 are disposed on the active surface 200 a of the chip 200. For example, the pad 210 includes a first pad 212, a second pad 214, a third pad 216, and a fourth pad 218, for example. 1B, in the short-side direction D1 of the chip 200, the first pad 212 and the second pad 214 are, for example, located on a short side of the active surface 200a, and are respectively disposed adjacent to the chip 200 along the short-side direction D1. The first pad 212 and the second pad 214 overlap with the outermost circle of the antenna 300 in the top view direction. In this embodiment, a third pad 216 and a fourth pad 218 may be provided on the other short side of the chip 200, wherein the third pad 216 and the fourth pad 218 are respectively provided along the short side direction D1, for example At both ends of the long side adjacent to the chip 200 (as shown in FIG. 1A ), the third pad 216 and the fourth pad 218 overlap the innermost circle of the antenna 300 in the top view direction. It should be noted that although the number of pads on each short side of the chip shown in FIG. 1B is two as an example, the present invention is not limited to this. In other embodiments, the number of pads on each short side of the chip can also be 1 or greater than or equal to 2, and the type of the pads can also be adjusted according to different electrical connection methods, which will be described in detail later. 1C, in the longitudinal direction D2 of the chip 200, the third pad 216 is located at one end of the active surface 200a along the longitudinal direction D2 relative to the first pad 212, for example. For example, the fourth pad 218 is located at one end of the active surface 200 a along the longitudinal direction D2 relative to the second pad 214 (as shown in FIG. 1A ). In this embodiment, the chip 200 may be an integrated circuit component based on plastic, that is, a chip type in which active components and circuits are formed on a flexible substrate such as plastic. The active surface 200a is the formation surface of an integrated circuit including thin film transistors, TFTs, etc. In this embodiment, the first pad 212, the second pad 214, the third pad 216, and the fourth pad 218 can be used as electrical It is connected to the contact point of the integrated circuit inside the chip 200. The materials of the first pad 212, the second pad 214, the third pad 216 and the fourth pad 218 include conductive materials, such as gold, silver, copper, aluminum, molybdenum, titanium or other metals or alloys containing the foregoing metals .

天線300例如為螺旋狀線圈或其他形狀,且天線300的兩端分別電性連接至晶片200的接墊210,在本實施例中,對天線300的兩端具體說明如下:天線300的一端為位於天線最外圈上,且自線圈最外圈的末端向內(向最內圈的方向)延伸、覆蓋晶片的接墊210且跨越晶片短邊的特定線段,後文將此特定線段稱為天線300的第一接合線段310;另一端為位於天線最內圈上,且自最內圈的末端向外(向最外圈的方向)延伸、覆蓋晶片的另一接墊210且跨越晶片另一短邊的特定線段,後文將此特定線段稱為天線300的第二接合線段320。The antenna 300 is, for example, a helical coil or other shapes, and both ends of the antenna 300 are electrically connected to the pads 210 of the chip 200. In this embodiment, the two ends of the antenna 300 are specifically described as follows: one end of the antenna 300 is Located on the outermost circle of the antenna, and extending from the end of the outermost circle of the coil inward (in the direction of the innermost circle), covering the pad 210 of the chip and crossing a specific line segment on the short side of the chip. This specific line segment will be referred to as The first bonding wire segment 310 of the antenna 300; the other end is located on the innermost circle of the antenna and extends outward (in the direction of the outermost circle) from the end of the innermost circle, covering the other pad 210 of the chip and crossing the other chip A specific line segment on a short side is referred to as the second bonding line segment 320 of the antenna 300 hereinafter.

請參照圖1A,在天線裝置的俯視方向上,天線300位於最外圈的第一接合線段310與最內圈第二接合線段320在基板投影方向上以連續且完全跨越晶片200的短邊方向D1的方式,從晶片200的一側長邊橫跨至晶片200的另一側長邊,而分別於晶片200的兩短邊延伸。據此,可以使得天線與晶片的接合較不受接墊等接合面的地貌(topography)影響,避免天線產生斷線等問題。在本實施例中,天線300的材料包括導電材料,例如銀、銅、鋁、石墨烯或其他導電材料。此外,天線300的第一接合線段310與第二接合線段320的寬度亦可大於天線300其他部位的寬度。如圖1A所示,在晶片200上,相較於其他部分的天線300,第一接合線段310及第二接合線段320在基板投影方向上具有較大的覆蓋面積,據此可更完整地覆蓋晶片200的兩個短邊。1A, in the top view of the antenna device, the antenna 300 is located on the outermost first bonding line segment 310 and the innermost second bonding line segment 320 in the substrate projection direction to continuously and completely cross the short side direction of the chip 200 In the D1 method, the long side of the wafer 200 spans from the long side of the wafer 200 to the long side of the other side of the wafer 200 and extends on the two short sides of the wafer 200 respectively. According to this, the bonding of the antenna and the chip can be made less affected by the topography of the bonding surface such as the pad, and the problem of disconnection of the antenna can be avoided. In this embodiment, the material of the antenna 300 includes conductive materials, such as silver, copper, aluminum, graphene, or other conductive materials. In addition, the width of the first bonding wire segment 310 and the second bonding wire segment 320 of the antenna 300 may also be greater than the width of other parts of the antenna 300. As shown in FIG. 1A, on the chip 200, compared with other parts of the antenna 300, the first bonding wire segment 310 and the second bonding wire segment 320 have a larger coverage area in the projection direction of the substrate, and thus can cover more completely The two short sides of the wafer 200.

在本實施例中,天線300的第一接合線段310與第二接合線段320完整覆蓋晶片200的接墊210。進一步而言,如圖1A所示,在天線裝置的俯視方向上,第一接合線段310的覆蓋面積大於第一接墊212及第二接墊214的面積,第二接合線段320的覆蓋面積大於第三接墊216及第四接墊218的面積,因此能夠增加天線300與晶片200的接墊210的接觸面積,從而確保天線300與晶片200之間的電性連接、以及避免天線與晶片在接合時產生斷線或天線破裂等不良。In this embodiment, the first bonding wire segment 310 and the second bonding wire segment 320 of the antenna 300 completely cover the pad 210 of the chip 200. Furthermore, as shown in FIG. 1A, in the top view of the antenna device, the coverage area of the first bonding wire segment 310 is larger than the areas of the first pad 212 and the second pad 214, and the coverage area of the second bonding wire segment 320 is larger than The area of the third pad 216 and the fourth pad 218 can therefore increase the contact area between the antenna 300 and the pad 210 of the chip 200, thereby ensuring the electrical connection between the antenna 300 and the chip 200, and preventing the antenna and the chip from being in contact with each other. Defects such as wire breakage or antenna breakage occurred during bonding.

在本實施例中,可進一步於基板100中設置凹槽。舉例來說,可在基板100上以沖壓的方式沖壓晶片預定形成區域的基板,以薄化該晶片預定形成區域的基板厚度,而於該晶片預定形成區域處形成可容置晶片的凹槽。在其他實施例中,也可藉由在基板100上形成具有開口的印刷層來設置凹槽,詳於後文說明。在一些實施例中,在位於凹槽110處的基板100的沖壓密度例如大於位於凹槽110的周圍處的基板100的沖壓密度,但本發明不以此為限。請參照圖1B與圖1C,凹槽110的側壁110a與基板100的底面100b之間具有夾角θ1。舉例來說,夾角θ1可為銳角,但本發明不以此為限。In this embodiment, a groove may be further provided in the substrate 100. For example, the substrate in the predetermined region of the wafer can be stamped on the substrate 100 by stamping to reduce the thickness of the substrate in the predetermined region of the wafer, and a groove capable of accommodating the wafer can be formed in the predetermined region of the wafer. In other embodiments, the grooves can also be provided by forming a printed layer with openings on the substrate 100, which will be described in detail later. In some embodiments, the punching density of the substrate 100 at the groove 110 is, for example, greater than the punching density of the substrate 100 at the periphery of the groove 110, but the present invention is not limited thereto. 1B and 1C, there is an angle θ1 between the sidewall 110a of the groove 110 and the bottom surface 100b of the substrate 100. For example, the included angle θ1 may be an acute angle, but the invention is not limited to this.

晶片200例如設置於凹槽110內。圖1C中,是以凹槽110的深度與晶片200的高度實質上相同為例進行說明。再者,凹槽深度不大於基板整體的厚度,亦即在凹槽110的底部110b保留一定厚度的基板100。此外,凹槽110的設置深度可視需求調整,在本實施例中,凹槽110的深度可以接墊210的頂面210a實質上切齊於基板100的表面100a的方式來進行設置。具體而言,請參照圖1C,將晶片200的接墊210的頂面210a與基板100的底面100b之間的距離設為H1,將位於凹槽110之外的基板100的厚度設為H2,則例如將接墊210的頂面210a與基板100的表面100a之間的距離設置為│H1-H2│≦5 μm。在一實施例中,距離│H1-H2│例如設置為實質上為0 μm,即接墊210的頂面210a與基板100的表面100a可為共平面。The wafer 200 is, for example, disposed in the groove 110. In FIG. 1C, the description is made with an example in which the depth of the groove 110 is substantially the same as the height of the wafer 200. Furthermore, the depth of the groove is not greater than the thickness of the entire substrate, that is, a certain thickness of the substrate 100 is reserved at the bottom 110 b of the groove 110. In addition, the setting depth of the groove 110 can be adjusted according to requirements. In this embodiment, the depth of the groove 110 can be set in such a way that the top surface 210a of the pad 210 is substantially aligned with the surface 100a of the substrate 100. Specifically, referring to FIG. 1C, the distance between the top surface 210a of the pad 210 of the wafer 200 and the bottom surface 100b of the substrate 100 is set to H1, and the thickness of the substrate 100 outside the groove 110 is set to H2. For example, the distance between the top surface 210a of the pad 210 and the surface 100a of the substrate 100 is set to |H1-H2│≦5 μm. In one embodiment, the distance |H1-H2| is set to be substantially 0 μm, for example, that is, the top surface 210a of the pad 210 and the surface 100a of the substrate 100 may be coplanar.

另外,在天線裝置的俯視方向上,凹槽110不會貫穿整個基板100。將凹槽110的底部110b與基板100的底面100b之間的距離設為H3,則距離H3不為0 μm。在一實施例中,基板100的厚度H2例如為50~70 μm,距離H3例如為20~30 μm,可依據基板的強韌度來調整凹槽處的基板殘存厚度(即距離H3),本發明不限於此。In addition, in the planar direction of the antenna device, the groove 110 does not penetrate the entire substrate 100. If the distance between the bottom 110b of the groove 110 and the bottom surface 100b of the substrate 100 is set as H3, the distance H3 is not 0 μm. In one embodiment, the thickness H2 of the substrate 100 is, for example, 50 to 70 μm, and the distance H3 is, for example, 20 to 30 μm. The residual thickness of the substrate at the groove (ie, the distance H3) can be adjusted according to the strength of the substrate. The invention is not limited to this.

在本實施例中,天線300除了完整覆蓋晶片200的兩個短邊外例如也完整覆蓋凹槽110的兩個短邊。進而可避免天線與晶片的接合受到凹槽等地貌影響、以及防止天線產生斷線或天線破裂等不良。In this embodiment, the antenna 300 completely covers the two short sides of the wafer 200, for example, it also completely covers the two short sides of the groove 110. Furthermore, it is possible to prevent the bonding of the antenna and the chip from being affected by the topography such as grooves, and prevent the antenna from disconnecting or breaking the antenna.

基於上述,藉由在基板設置如上的凹槽,不僅可降低天線裝置10的整體厚度,也可避免因晶片凸出基板而容易在製造過程中受到破壞而影響良率、或是因晶片與基板之間存在斷差而容易使天線形成斷線等問題。舉例來說,相較於傳統的天線裝置(厚度大於100 μm),本發明之天線裝置10的厚度因僅包含基板100與天線300的厚度,故天線裝置10的整體厚度可達小於50 μm的程度。另外,天線印刷時晶片與基板之間的斷差例如為0 μm。Based on the above, by providing the above grooves on the substrate, not only the overall thickness of the antenna device 10 can be reduced, but also it can be avoided that the wafer protrudes from the substrate and is easily damaged during the manufacturing process to affect the yield, or due to the wafer and the substrate. There is a gap between them and it is easy to cause the antenna to form a disconnection and other problems. For example, compared with the traditional antenna device (thickness greater than 100 μm), the thickness of the antenna device 10 of the present invention only includes the thickness of the substrate 100 and the antenna 300, so the overall thickness of the antenna device 10 can be less than 50 μm. degree. In addition, the gap between the wafer and the substrate during antenna printing is, for example, 0 μm.

在本實施例中,基板100與晶片200之間還可選擇性地包括黏著層。舉例來說,晶片200可藉由黏著層400而貼附固定於基板100上。黏著層400在基板投影方向上的面積例如大於或等於或小於晶片200在基板投影方向上的面積。在一些實施例中,當黏著層400在基板投影方向上的面積大於晶片200在基板投影方向上的面積時,晶片200例如埋設於黏著層400的一部分內,使得位於基板100與晶片200之間的黏著層400的厚度小於位於晶片200周邊的黏著層400。舉例來說,黏著層400還可具有凹槽410,且晶片200例如埋設於凹槽410內。如此一來,可以防止晶片200自基板100上脫落。在本實施例中,黏著層400的材料例如包括黏膠,如熱熔膠或其他適宜的黏著材料,但本發明不限於此。In this embodiment, an adhesive layer may optionally be included between the substrate 100 and the wafer 200. For example, the chip 200 can be attached and fixed on the substrate 100 by the adhesive layer 400. The area of the adhesive layer 400 in the projection direction of the substrate is, for example, greater than or equal to or smaller than the area of the wafer 200 in the projection direction of the substrate. In some embodiments, when the area of the adhesive layer 400 in the projection direction of the substrate is greater than the area of the wafer 200 in the projection direction of the substrate, the wafer 200 is, for example, buried in a part of the adhesive layer 400 so as to be located between the substrate 100 and the wafer 200 The thickness of the adhesive layer 400 is smaller than that of the adhesive layer 400 located at the periphery of the chip 200. For example, the adhesive layer 400 may further have a groove 410, and the wafer 200 is buried in the groove 410, for example. In this way, the wafer 200 can be prevented from falling off the substrate 100. In this embodiment, the material of the adhesive layer 400 includes, for example, adhesive, such as hot melt adhesive or other suitable adhesive materials, but the present invention is not limited thereto.

在一實施例中,在基板100具有凹槽110的情況下,黏著層400可位於凹槽110的底部110b,而可將晶片200貼附固定於凹槽110內。In one embodiment, when the substrate 100 has the groove 110, the adhesive layer 400 may be located at the bottom 110b of the groove 110, and the chip 200 may be attached and fixed in the groove 110.

在本實施例中,基板100上還可選擇性地包括保護層。舉例來說,在基板100上,保護層500至少覆蓋具有晶片200及天線300的區域。換句話說,保護層500覆蓋晶片200、天線300及部分的基板100。另外,在基板100還具有凹槽110的情況下,在天線裝置的俯視方向上,保護層500的覆蓋面積例如大於凹槽110的面積。藉此,可保護晶片與天線在製造過程中不會受到破壞,也可防止天線脫落。在本實施例中,保護層500例如包括印刷保護層或是印刷材料等。舉例來說,當將天線裝置10用於包裝盒上時,保護層500可為用於包裝盒外層的印刷層,即如用於印刷商標、包裝設計等的印刷材料。如此一來,可簡化製造步驟進而提升製程效率,並藉由保護層使天線裝置隱藏於印刷層的內部,進而可保護晶片、天線不受到損壞。In this embodiment, the substrate 100 may also optionally include a protective layer. For example, on the substrate 100, the protective layer 500 at least covers the area with the chip 200 and the antenna 300. In other words, the protective layer 500 covers the chip 200, the antenna 300 and part of the substrate 100. In addition, in the case where the substrate 100 further has the groove 110, in the top view direction of the antenna device, the covering area of the protective layer 500 is, for example, larger than the area of the groove 110. Thereby, the chip and the antenna can be protected from being damaged during the manufacturing process, and the antenna can also be prevented from falling off. In this embodiment, the protective layer 500 includes, for example, a printed protective layer or a printed material. For example, when the antenna device 10 is used on a packaging box, the protective layer 500 may be a printing layer used for the outer layer of the packaging box, that is, a printed material used for printing trademarks, packaging designs, and the like. In this way, the manufacturing steps can be simplified to improve the process efficiency, and the antenna device can be hidden inside the printed layer by the protective layer, thereby protecting the chip and the antenna from damage.

圖2A是依照本發明的第二實施例的一種天線裝置的上視示意圖;圖2B為沿著圖2A中的X1-X2線段的局部剖面示意圖;圖2C為沿著圖2A的Y1-Y2線段的剖面示意圖。在此必須說明的是,圖2A至圖2C的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。Fig. 2A is a schematic top view of an antenna device according to the second embodiment of the present invention; Fig. 2B is a schematic partial cross-sectional view along the line X1-X2 in Fig. 2A; Fig. 2C is a schematic view along the line Y1-Y2 in Fig. 2A Schematic diagram of the cross section. It must be noted here that the embodiment of FIGS. 2A to 2C uses the element numbers and part of the content of the embodiment of FIGS. 1A to 1C, wherein the same or similar numbers are used to denote the same or similar elements, and the same is omitted. Description of technical content. For the description of the omitted parts, refer to the foregoing embodiment, which is not repeated here.

請參照圖2A至圖2C,本實施例之天線裝置20與第一實施例之天線裝置10的不同處為:本實施例之天線裝置20中,基板100在晶片周圍區域還具有溝槽120,藉此降低天線裝置20在製造過程中,晶片受到外力而斷裂等影響。如圖2A所示,溝槽120鄰近晶片200的短邊,且與晶片200相隔一距離。在本實施例中,溝槽120與晶片200相隔的距離例如為2 mm,但本發明不以此為限。需注意的是,雖然圖2A所繪示的溝槽數量以2個為例,但本發明不以此為限。在其他實施例中,溝槽數量也可以是1個或大於等於2個。在本實施例中,溝槽120的長度延伸方向例如與晶片200的短邊方向D1平行,溝槽120的長度例如大於或等於晶片200的寬度。溝槽120的深度例如小於或等於基板100的厚度,在本實施例中,溝槽120例如貫通基板100。據此,在製造過程中,當產生因基板與晶片之間的延展性不同而造成的晶片位置偏離時,溝槽可發揮緩衝的功能以避免晶片受到拉扯而斷裂,進而提升天線裝置的良率。2A to 2C, the difference between the antenna device 20 of this embodiment and the antenna device 10 of the first embodiment is: in the antenna device 20 of this embodiment, the substrate 100 further has a groove 120 in the area around the chip. This reduces the impact of chip breakage due to external force during the manufacturing process of the antenna device 20. As shown in FIG. 2A, the trench 120 is adjacent to the short side of the wafer 200 and is separated from the wafer 200 by a distance. In this embodiment, the distance between the trench 120 and the wafer 200 is, for example, 2 mm, but the invention is not limited to this. It should be noted that although the number of grooves shown in FIG. 2A is two as an example, the present invention is not limited thereto. In other embodiments, the number of grooves can also be one or greater than or equal to two. In this embodiment, the longitudinal extension direction of the trench 120 is, for example, parallel to the short-side direction D1 of the wafer 200, and the length of the trench 120 is, for example, greater than or equal to the width of the wafer 200. The depth of the trench 120 is, for example, less than or equal to the thickness of the substrate 100. In this embodiment, the trench 120 penetrates the substrate 100, for example. Accordingly, in the manufacturing process, when the wafer position is deviated due to the difference in ductility between the substrate and the wafer, the groove can play a buffer function to prevent the wafer from being pulled and broken, thereby improving the yield of the antenna device. .

圖3A是依照本發明的第三實施例的一種天線裝置的上視示意圖;圖3B為沿著圖3A中的X1-X2線段的局部剖面示意圖;圖3C為沿著圖3A的Y1-Y2線段的剖面示意圖。在此必須說明的是,圖3A至圖3C的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。Fig. 3A is a schematic top view of an antenna device according to a third embodiment of the present invention; Fig. 3B is a schematic partial cross-sectional view along the line X1-X2 in Fig. 3A; Fig. 3C is a schematic view along the line Y1-Y2 in Fig. 3A Schematic diagram of the cross-section. It must be noted here that the embodiment of FIGS. 3A to 3C follows the element numbers and part of the content of the embodiment of FIGS. 1A to 1C, wherein the same or similar numbers are used to denote the same or similar elements, and the same is omitted. Description of technical content. For the description of the omitted parts, refer to the foregoing embodiment, which is not repeated here.

請參照圖3A至圖3C,本實施例之天線裝置30與第一實施例之天線裝置10之不同處為:本實施例之天線裝置30的凹槽130面積大於第一實施例之天線裝置10的凹槽110面積。在本實施例中,除了晶片200外,天線300也一併完全地容置於凹槽130內。請參照圖3C,凹槽130的側壁130a與基板100的底面100b之間具有夾角θ2,夾角θ2可為銳角,但本發明不以此為限。3A to 3C, the difference between the antenna device 30 of this embodiment and the antenna device 10 of the first embodiment is that the area of the groove 130 of the antenna device 30 of this embodiment is larger than that of the antenna device 10 of the first embodiment The area of the groove 110. In this embodiment, in addition to the chip 200, the antenna 300 is also completely contained in the groove 130. 3C, there is an included angle θ2 between the sidewall 130a of the groove 130 and the bottom surface 100b of the substrate 100, and the included angle θ2 may be an acute angle, but the present invention is not limited thereto.

請參照圖3A,在天線裝置的俯視方向上,保護層500的覆蓋面積例如大於凹槽130的面積。藉此,可保護晶片與天線在製造過程中不會受到破壞,也可防止天線脫落。Referring to FIG. 3A, in the top view direction of the antenna device, the covering area of the protective layer 500 is, for example, larger than the area of the groove 130. Thereby, the chip and the antenna can be protected from being damaged during the manufacturing process, and the antenna can also be prevented from falling off.

請參照圖3C,天線300大致上包括兩種在不同平面上的走線,例如位於晶片200上的天線302以及位於凹槽130底部130b的天線304,在本實施例中,天線302的表面302a高於天線304的表面304a。另外,凹槽130的深度可以天線302的表面302a實質上切齊於基板100的表面100a的方式來進行設置。具體而言,將天線302的表面302a與基板100的底面100b之間的距離設為H4,將位於凹槽130之外的基板100的厚度設為H2,則距離H4可小於厚度H2、或是例如將天線302的表面302a與基板100的表面100a之間的距離設置為│H4-H2│≦5 μm。在一實施例中,距離│H4-H2│例如設置為實質上為0 μm,即天線302的表面302a與基板100的表面100a可為共平面。如此一來,不僅可降低天線裝置30的整體厚度,也可避免因晶片或天線凸出基板而容易在製造過程中受到破壞而影響良率、或是容易使天線形成斷線等問題。3C, the antenna 300 roughly includes two types of traces on different planes, such as the antenna 302 located on the chip 200 and the antenna 304 located at the bottom 130b of the groove 130. In this embodiment, the surface 302a of the antenna 302 It is higher than the surface 304a of the antenna 304. In addition, the depth of the groove 130 can be set in such a way that the surface 302 a of the antenna 302 is substantially aligned with the surface 100 a of the substrate 100. Specifically, if the distance between the surface 302a of the antenna 302 and the bottom surface 100b of the substrate 100 is set to H4, and the thickness of the substrate 100 outside the groove 130 is set to H2, the distance H4 can be less than the thickness H2, or For example, the distance between the surface 302a of the antenna 302 and the surface 100a of the substrate 100 is set to |H4-H2│≦5 μm. In one embodiment, the distance |H4-H2| is set to be substantially 0 μm, for example, that is, the surface 302a of the antenna 302 and the surface 100a of the substrate 100 may be coplanar. In this way, not only the overall thickness of the antenna device 30 can be reduced, but also problems such as the chip or the antenna protruding from the substrate and easily damaged during the manufacturing process, affecting the yield, or easily causing the antenna to be disconnected, can also be avoided.

圖4A是依照本發明的第四實施例的一種天線裝置的上視示意圖;圖4B為沿著圖4A中的X1-X2線段的局部剖面示意圖;圖4C為沿著圖4A的Y1-Y2線段的剖面示意圖。在此必須說明的是,圖4A至圖4C的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。Fig. 4A is a schematic top view of an antenna device according to a fourth embodiment of the present invention; Fig. 4B is a schematic partial cross-sectional view along the line X1-X2 in Fig. 4A; Fig. 4C is a schematic view along the line Y1-Y2 in Fig. 4A Schematic diagram of the cross-section. It must be noted here that the embodiment of FIGS. 4A to 4C uses the element numbers and part of the content of the embodiment of FIGS. 1A to 1C, wherein the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, refer to the foregoing embodiment, which is not repeated here.

請參照圖4A至圖4C,本實施例之天線裝置40與第一實施例之天線裝置10的不同處為基板100上不包含凹槽110,且保護層502的面積較小,在天線裝置的俯視方向上,保護層502僅覆蓋與晶片200接合處附近的部分天線300。換句話說,保護層502的覆蓋面積至少大於設置有晶片200的區域即可。藉此,可保護晶片在製造過程中不會受到破壞。4A to 4C, the difference between the antenna device 40 of this embodiment and the antenna device 10 of the first embodiment is that the substrate 100 does not include the groove 110, and the area of the protective layer 502 is small. In the top view direction, the protective layer 502 only covers a part of the antenna 300 near the junction with the wafer 200. In other words, the coverage area of the protective layer 502 is at least larger than the area where the wafer 200 is provided. In this way, the chip can be protected from damage during the manufacturing process.

在本實施例中,相較於傳統的天線裝置,本發明之天線裝置40具有較小的整體厚度,且天線印刷時晶片與基板之間的斷差小。舉例來說,相較於傳統的天線裝置(厚度大於100 μm),天線裝置40的厚度因僅包含基板100、黏著層400、晶片200與天線300的厚度,故天線裝置40的整體厚度可薄化至70 μm~80 μm。另外,在黏著層400未具有凹槽410的情況下,天線300印刷時晶片與基板之間的斷差例如為23 μm,較傳統天線裝置厚度薄,亦能達成防止晶片破裂、天線斷線等技術效果。另一方面,在黏著層400具有凹槽410的情況下,天線300印刷時晶片與基板之間的斷差可更降低至15 μm,使得前述技術效果更佳。In this embodiment, compared with the conventional antenna device, the antenna device 40 of the present invention has a smaller overall thickness, and the gap between the chip and the substrate when the antenna is printed is small. For example, compared to the conventional antenna device (thickness greater than 100 μm), the thickness of the antenna device 40 only includes the thickness of the substrate 100, the adhesive layer 400, the chip 200 and the antenna 300, so the overall thickness of the antenna device 40 can be thinner Change to 70 μm~80 μm. In addition, when the adhesive layer 400 does not have the groove 410, the gap between the chip and the substrate when the antenna 300 is printed is, for example, 23 μm, which is thinner than the conventional antenna device, and can also prevent chip cracking, antenna disconnection, etc. Technical effect. On the other hand, when the adhesive layer 400 has the groove 410, the gap between the wafer and the substrate during the printing of the antenna 300 can be further reduced to 15 μm, so that the aforementioned technical effect is better.

以下,將說明依照本發明的第五實施例的一種天線裝置的製造流程。Hereinafter, a manufacturing process of an antenna device according to the fifth embodiment of the present invention will be explained.

圖5A至圖5D是依照本發明的第五實施例的一種天線裝置的製造方法的流程圖。在此必須說明的是,圖5A至圖5D的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。在本實施例中,是以黏著層400在基板投影方向上的面積大於晶片200在基板投影方向上的面積為例進行說明。5A to 5D are flowcharts of a manufacturing method of an antenna device according to a fifth embodiment of the present invention. It must be noted here that the embodiments of FIGS. 5A to 5D follow the element numbers and part of the content of the embodiments of FIGS. 1A to 1C, wherein the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, refer to the foregoing embodiment, which is not repeated here. In this embodiment, the description is made by taking an example that the area of the adhesive layer 400 in the projection direction of the substrate is larger than the area of the wafer 200 in the projection direction of the substrate.

請參照圖5A,提供基板100。接著,對應於後續步驟中晶片預定形成區域,在基板上形成黏著層400。Referring to FIG. 5A, a substrate 100 is provided. Next, corresponding to the predetermined formation area of the wafer in the subsequent steps, an adhesive layer 400 is formed on the substrate.

請參照圖5B,在基板100上形成印刷層600。在本實施例中,印刷層600還具有開口602,以暴露出部分的黏著層400。換句話說,印刷層600覆蓋部分的黏著層400,且開口602的側壁與黏著層400的側面之間具有一距離L1。在本實施例中,黏著層400與印刷層600的開口602共同形成凹槽的形狀,即開口602所暴露出的黏著層400的表面400a例如為凹槽的底部,開口602的側壁例如為凹槽的側壁。在本實施例中,印刷層600的材料例如為用於印刷商標、包裝設計等的印刷油墨。印刷層600的厚度例如為15 μm。Referring to FIG. 5B, a printing layer 600 is formed on the substrate 100. In this embodiment, the printing layer 600 further has an opening 602 to expose part of the adhesive layer 400. In other words, the printing layer 600 covers a part of the adhesive layer 400, and there is a distance L1 between the sidewall of the opening 602 and the side surface of the adhesive layer 400. In this embodiment, the adhesive layer 400 and the opening 602 of the printing layer 600 jointly form a groove shape, that is, the surface 400a of the adhesive layer 400 exposed by the opening 602 is, for example, the bottom of the groove, and the sidewall of the opening 602 is, for example, a recess. The sidewall of the groove. In this embodiment, the material of the printing layer 600 is, for example, printing ink used for printing trademarks, packaging designs, and the like. The thickness of the printed layer 600 is, for example, 15 μm.

請參照圖5C,將晶片200放置在黏著層400上,即將晶片200設置於印刷層600的開口602內。在本實施例中,印刷層600與黏著層400共同形成的凹槽深度例如為晶片200厚度的1/2。具體而言,請參照圖5C,印刷層600的表面600a與黏著層400的表面400a之間具有一距離H5,且距離H5例如小於或等於1/2的晶片200厚度。Referring to FIG. 5C, the chip 200 is placed on the adhesive layer 400, that is, the chip 200 is placed in the opening 602 of the printed layer 600. In this embodiment, the depth of the groove formed by the printing layer 600 and the adhesive layer 400 is, for example, 1/2 of the thickness of the wafer 200. Specifically, referring to FIG. 5C, there is a distance H5 between the surface 600a of the printing layer 600 and the surface 400a of the adhesive layer 400, and the distance H5 is, for example, less than or equal to 1/2 the thickness of the wafer 200.

接著,例如藉由加熱、加壓製程以固定晶片200之後,使印刷層600的表面600a與晶片200的主動面200a成為共平面。Then, for example, after the chip 200 is fixed by a heating and pressing process, the surface 600a of the printing layer 600 and the active surface 200a of the chip 200 are made coplanar.

請參照圖5D,在基板100上形成天線300。在本實施例中,天線300例如形成於印刷層600及晶片200上。至此,已大致完成本實施例的天線裝置50的製作。在本實施例中,在天線裝置的俯視方向上,印刷層600的面積例如介於晶片200的面積與天線300的面積之間,且與部分的黏著層400重疊,但不與晶片200的位置重疊。Referring to FIG. 5D, an antenna 300 is formed on the substrate 100. In this embodiment, the antenna 300 is formed on the printed layer 600 and the chip 200, for example. So far, the fabrication of the antenna device 50 of this embodiment has been roughly completed. In this embodiment, in the top view direction of the antenna device, the area of the printed layer 600 is, for example, between the area of the chip 200 and the area of the antenna 300, and overlaps a part of the adhesive layer 400, but does not overlap with the position of the chip 200 overlapping.

基於上述,藉由在基板設置如上的印刷層,不僅可降低天線裝置50的整體厚度,也可保護晶片在製造過程中不會受到破壞而影響良率、或是可以使得天線與晶片的接合較不受接合面的地貌影響,避免天線產生斷線等情形。Based on the above, by providing the above printed layer on the substrate, not only the overall thickness of the antenna device 50 can be reduced, but also the chip can be protected from damage during the manufacturing process to affect the yield, or the bonding between the antenna and the chip can be improved. It is not affected by the topography of the joint surface and avoids disconnection of the antenna.

以下,將例示說明可應用於上述實施例中接墊的實施形態以及可應用於晶片的電路結構,但本發明並不限定於以下的實施形態。Hereinafter, embodiments that can be applied to the pads in the above-mentioned embodiments and circuit structures that can be applied to chips will be exemplified, but the present invention is not limited to the following embodiments.

圖6A是依照本發明的第六實施例的晶片的上視示意圖;圖6B是依照本發明的第七實施例的晶片的上視示意圖;圖7是依照本發明的第八實施例的晶片的電路結構示意圖。在此必須說明的是,圖6A、圖6B、圖7的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,在此不贅述。6A is a schematic top view of a wafer according to a sixth embodiment of the present invention; FIG. 6B is a schematic top view of a wafer according to a seventh embodiment of the present invention; FIG. 7 is a schematic view of a wafer according to the eighth embodiment of the present invention Schematic diagram of the circuit structure. It must be noted here that the embodiment of FIG. 6A, FIG. 6B, and FIG. 7 use the element numbers and part of the content of the embodiment of FIG. 1A to FIG. 1C, wherein the same or similar reference numbers are used to represent the same or similar elements, and The description of the same technical content is omitted. For the description of the omitted parts, refer to the foregoing embodiment, which is not repeated here.

請參照圖6A,晶片200的接墊例如包括多個接墊LA1及多個接墊LB1,其中在晶片200的長邊方向D2上,多個接墊LA1位於晶片200的一短邊上,且多個接墊LB1位於晶片200的另一短邊上。需注意的是,雖然圖6A所繪示接墊LA1與接墊LB1的數量以2個為例,但本發明不以此為限。在其他實施例中,接墊LA1與接墊LB1的數量也可以是大於等於2個。舉例來說,在上述任一實施例中的晶片200,第三接墊216與第四接墊218可視為多個接墊LA1,第一接墊212與第二接墊214可視為多個接墊LB1;或是第一接墊212與第二接墊214可視為多個接墊LA1,第三接墊216與第四接墊218可視為多個接墊LB1。因此,接墊LA1及接墊LB1的結構類似於前述任一實施例中的接墊210,於此不再贅述。另外,天線的兩端(例如天線300的第一接合線段310及第二接合線段320)分別覆蓋多個接墊LA1及多個接墊LB1,而透過接墊LA1及接墊LB1電性連接至晶片200內的驅動電路,據此接墊LA1及接墊LB1的其中一者可作為輸入端、另一者可作為輸出端而發揮功能。6A, the pads of the chip 200 include, for example, a plurality of pads LA1 and a plurality of pads LB1, wherein in the long side direction D2 of the chip 200, the plurality of pads LA1 are located on a short side of the chip 200, and The multiple pads LB1 are located on the other short side of the chip 200. It should be noted that although the number of pads LA1 and LB1 shown in FIG. 6A is two as an example, the present invention is not limited thereto. In other embodiments, the number of pads LA1 and LB1 can also be greater than or equal to two. For example, in the chip 200 in any of the above embodiments, the third pad 216 and the fourth pad 218 can be regarded as a plurality of pads LA1, and the first pad 212 and the second pad 214 can be regarded as a plurality of pads. Pad LB1; or the first pad 212 and the second pad 214 can be regarded as a plurality of pads LA1, and the third pad 216 and the fourth pad 218 can be regarded as a plurality of pads LB1. Therefore, the structure of the pad LA1 and the pad LB1 is similar to the pad 210 in any of the foregoing embodiments, and will not be repeated here. In addition, both ends of the antenna (for example, the first bonding wire segment 310 and the second bonding wire segment 320 of the antenna 300) respectively cover a plurality of pads LA1 and a plurality of pads LB1, and are electrically connected to the pads LA1 and LB1 through the pads LA1 and LB1. According to the driving circuit in the chip 200, one of the pad LA1 and the pad LB1 can function as an input terminal, and the other can function as an output terminal.

請參照圖6B,晶片200的接墊例如包括接墊LA2及接墊LB2,其中在晶片200的長邊方向D2上,接墊LA2位於晶片200的一短邊上,且接墊LB2位於晶片200的另一短邊上。接墊LA2及接墊LB2例如為沿著晶片200的短邊方向D1延伸的長條狀接墊。舉例來說,接墊LA2及接墊LB2可為長度略小於晶片200的寬度的長條狀接墊。如此一來,可增加晶片的接墊與天線之間的接觸面積。另外,天線的兩端(例如天線300的第一接合線段310及第二接合線段320)分別覆蓋接墊LA2及接墊LB2,而透過接墊LA2及接墊LB2電性連接至晶片200內的驅動電路,據此接墊LA2及接墊LB2的其中一者可作為輸入端、另一者可作為輸出端而發揮功能。6B, the pads of the chip 200 include, for example, a pad LA2 and a pad LB2. In the long side direction D2 of the chip 200, the pad LA2 is located on a short side of the chip 200, and the pad LB2 is located on the chip 200. On the other short side. The pad LA2 and the pad LB2 are, for example, elongated pads extending along the short side direction D1 of the chip 200. For example, the pad LA2 and the pad LB2 can be elongated pads with a length slightly less than the width of the chip 200. In this way, the contact area between the pads of the chip and the antenna can be increased. In addition, both ends of the antenna (such as the first bonding wire segment 310 and the second bonding wire segment 320 of the antenna 300) respectively cover the pad LA2 and the pad LB2, and are electrically connected to the chip 200 through the pad LA2 and the pad LB2. According to the driving circuit, one of the pad LA2 and the pad LB2 can be used as an input terminal, and the other can function as an output terminal.

請參照圖7,晶片200上的接墊LA例如為上述多個接墊LA1或接墊LA2,接墊LB例如為上述多個接墊LB1或接墊LB2,但本發明不限於此。接墊LA及接墊LB的其中一者例如可作為輸入端、另一者例如可作為輸出端。在本實施例中,電路結構700例如藉由接墊LA及接墊LB耦接晶片200,且與電容C並聯。電容C例如為調諧電容器(Tuning Capacitor)。在一實施例中,電路結構700可包括射頻區塊710及數位區塊720。射頻區塊710例如包括整流器(Rectifier)712與調變器(Modulator)714等,數位區塊720例如包括時脈產生器(Clock Generator)722、記憶體陣列(Memory Array)724與數位控制器(Digital Controller)727等,但本發明不限於此。在本實施例中,例如將接墊LA作為輸入端以接收來自電路結構700的輸入信號並將接墊LB作為輸出端以輸出信號至電路結構700。在透過天線接收信號後,此信號可經由接墊LB輸出至電路結構700,並且電路結構700藉由射頻區塊710及數位區塊720對此信號進行整流、調變、寫入或讀取等處理。在處理完信號後,電路結構700可將處理後的信號輸出至接墊LA。Referring to FIG. 7, the pads LA on the chip 200 are, for example, the above-mentioned multiple pads LA1 or LA2, and the pads LB are, for example, the above-mentioned multiple pads LB1 or LB2, but the present invention is not limited thereto. One of the pad LA and the pad LB may be used as an input terminal, and the other may be used as an output terminal, for example. In this embodiment, the circuit structure 700 is coupled to the chip 200 via the pad LA and the pad LB, for example, and is connected in parallel with the capacitor C. The capacitor C is, for example, a tuning capacitor (Tuning Capacitor). In an embodiment, the circuit structure 700 may include a radio frequency block 710 and a digital block 720. The radio frequency block 710 includes, for example, a rectifier (Rectifier) 712 and a modulator (Modulator) 714, and the digital block 720 includes, for example, a clock generator (Clock Generator) 722, a memory array (Memory Array) 724, and a digital controller ( Digital Controller) 727, etc., but the present invention is not limited to this. In this embodiment, for example, the pad LA is used as the input terminal to receive the input signal from the circuit structure 700 and the pad LB is used as the output terminal to output the signal to the circuit structure 700. After receiving the signal through the antenna, the signal can be output to the circuit structure 700 through the pad LB, and the circuit structure 700 uses the radio frequency block 710 and the digital block 720 to rectify, modulate, write or read the signal, etc. deal with. After the signal is processed, the circuit structure 700 can output the processed signal to the pad LA.

以下,將說明依照本發明一實施例的一種天線裝置的製造流程,其中下述內容是以捲對捲(roll-to-roll)製程進行說明,但本發明不限於此。Hereinafter, a manufacturing process of an antenna device according to an embodiment of the present invention will be described. The following content is described in a roll-to-roll process, but the present invention is not limited to this.

圖8A是依照本發明的第九實施例的一種天線裝置的製造方法的流程圖;圖8B為圖8A的製造方法的局部立體示意圖。8A is a flowchart of a manufacturing method of an antenna device according to a ninth embodiment of the present invention; FIG. 8B is a partial perspective view of the manufacturing method of FIG. 8A.

請參照圖8A與圖8B,基板準備步驟包括步驟S100、步驟S102、步驟S104、步驟S108等。8A and 8B, the substrate preparation steps include step S100, step S102, step S104, step S108 and so on.

在步驟S100中,藉由一進料滾筒將基板(原物料基材)輸入至印刷設備中。在本實施例中,基板以捲對捲的方式移動,但本發明並不以此為限。基板例如紙、聚乙烯對苯二甲酸酯、聚氯乙烯、塑膠膜、或其他適宜的材料等,本發明並不以此為限。舉例來說,當欲將天線裝置用於包裝盒(如牛奶盒、紙袋、餅乾袋等)上時,基板可使用與用來形成包裝盒的基材(如紙、牛皮紙、塑膠等)相同的材料。In step S100, the substrate (raw material base material) is input into the printing device through a feed roller. In this embodiment, the substrate moves in a roll-to-roll manner, but the invention is not limited to this. The substrate is, for example, paper, polyethylene terephthalate, polyvinyl chloride, plastic film, or other suitable materials, and the present invention is not limited thereto. For example, when the antenna device is to be used on a packaging box (such as milk cartons, paper bags, biscuit bags, etc.), the substrate can be the same as the substrate used to form the packaging box (such as paper, kraft paper, plastic, etc.) material.

在步驟S102中,對應於後續步驟中晶片預定形成區域,在基板上印刷對位記號802並形成黏著層810。在本實施例中,黏著層810例如熱熔膠或其他適宜的黏著材料。在一些實施例中,黏著層810還可具有凹槽(例如圖1B之凹槽410)。In step S102, the alignment mark 802 is printed on the substrate and the adhesive layer 810 is formed corresponding to the predetermined formation area of the wafer in the subsequent step. In this embodiment, the adhesive layer 810 is, for example, hot melt adhesive or other suitable adhesive materials. In some embodiments, the adhesive layer 810 may further have a groove (for example, the groove 410 of FIG. 1B).

在一實施例中,在基板中還可形成凹槽,例如形成圖1A之凹槽110、或圖3A之凹槽130。並且,可將黏著層810形成於該凹槽內。形成凹槽的方法例如以鋼印、沖壓等方式薄化晶片或天線的預定形成區域的基板厚度,而於該預定形成區域處形成可容置晶片及天線中至少一者的凹槽,但本發明不限於此。In one embodiment, a groove may be formed in the substrate, for example, the groove 110 of FIG. 1A or the groove 130 of FIG. 3A may be formed. Moreover, an adhesive layer 810 can be formed in the groove. The method of forming the groove, for example, thinning the substrate thickness of the predetermined formation area of the chip or the antenna by means of stamping, stamping, etc., and forming a groove capable of accommodating at least one of the chip and the antenna at the predetermined formation area, but the present invention Not limited to this.

接著,在步驟S104中,乾燥黏著層810,使黏著層810固化。在本實施例中,乾燥黏著層810的方法並無特別限定,只要不會因後續製程而脫落即可。Next, in step S104, the adhesive layer 810 is dried to cure the adhesive layer 810. In this embodiment, the method of drying the adhesive layer 810 is not particularly limited, as long as it does not fall off due to subsequent manufacturing processes.

然後,在步驟S108中,藉由一收料滾筒900捲取具有對位記號802及黏著層810的基板800(半成品基材),並於接合設備中進行後續的步驟。Then, in step S108, the substrate 800 (semi-finished substrate) with the alignment mark 802 and the adhesive layer 810 is taken up by a take-up roller 900, and the subsequent steps are performed in the bonding equipment.

在一些實施例中,在步驟S104與步驟S108之間還可選擇性地進行步驟S106。在步驟S106中,例如藉由裁切基板以形成溝槽(未繪示)。在本實施例中,對應於後續步驟中晶片預定形成區域,溝槽的長度例如大於或等於該晶片預定形成區域的寬度,且溝槽的深度例如小於或等於基板的厚度。在鄰近該晶片預定形成區域的短邊,溝槽與該晶片預定形成區域相隔一距離。舉例來說,溝槽與該晶片預定形成區域之間的距離約為2 mm。溝槽的長度延伸方向例如與收料滾筒900的滾動方向平行,即溝槽的長度延伸方向例如與基板的移動方向D3平行。據此,在後續製程中,當產生因基板與晶片之間的延展性不同而造成的晶片位置偏離時,溝槽可發揮緩衝的功能以避免晶片受到拉扯而斷裂,進而提升天線裝置的良率。In some embodiments, step S106 can be optionally performed between step S104 and step S108. In step S106, for example, a trench (not shown) is formed by cutting the substrate. In this embodiment, corresponding to the predetermined formation area of the wafer in the subsequent step, the length of the trench is, for example, greater than or equal to the width of the predetermined formation area of the wafer, and the depth of the trench is, for example, less than or equal to the thickness of the substrate. On the short side adjacent to the predetermined formation area of the wafer, the groove is separated from the predetermined formation area of the wafer by a distance. For example, the distance between the groove and the predetermined formation area of the wafer is about 2 mm. The longitudinal extension direction of the groove is, for example, parallel to the rolling direction of the take-up drum 900, that is, the longitudinal extension direction of the groove is, for example, parallel to the moving direction D3 of the substrate. Accordingly, in the subsequent manufacturing process, when the wafer position deviation caused by the difference in ductility between the substrate and the wafer occurs, the groove can play a buffer function to prevent the wafer from being pulled and broken, thereby improving the yield of the antenna device. .

在一些實施例中,也可在步驟S104與步驟S108之間,藉由如圖5A至圖5D所示的製造流程,在基板上形成具有開口的印刷層,且該開口例如暴露出部分的黏著層810。In some embodiments, between step S104 and step S108, through the manufacturing process shown in FIGS. 5A to 5D, a printed layer with an opening is formed on the substrate, and the opening exposes, for example, part of the adhesive层810.

圖9A與圖9B是圖8A與圖8B的下一道步驟的示意圖。Fig. 9A and Fig. 9B are schematic diagrams of the next step of Fig. 8A and Fig. 8B.

請參照圖9A與圖9B,晶片放置步驟包括步驟S110、步驟S112、步驟S114、步驟S116、步驟S118等。9A and 9B, the wafer placement step includes step S110, step S112, step S114, step S116, step S118, and so on.

在步驟S110中,將於步驟S108中捲取的基板800輸入至接合設備中。在一實施例中,接合設備例如為覆晶封裝接合機(Flip Chip Bonding Machine)。In step S110, the substrate 800 to be wound up in step S108 is input into the bonding equipment. In one embodiment, the bonding device is, for example, a flip chip bonding machine (Flip Chip Bonding Machine).

在步驟S112中,拾取例如於晶圓或片材上的晶片820並使晶片820的接墊(未繪示)朝上(即晶片820的背面面向基板800)。在一些實施例中,位於晶圓或片材上的晶片820的接墊例如是朝向晶圓表面的情況下,在拾取晶片820之後,還包括藉由將晶片820翻轉180度,而使晶片820的接墊朝上。晶片820可包括兩個以上的接墊,其中接墊設置於晶片820的主動面上。舉例來說,接墊可為如圖6A所示的接墊LA1與接墊LB1、或如圖6B所示的接墊LA2與接墊LB2等,可依據設計需求調整接墊的配置(layout),本發明並不以此為限。在本實施例中,晶片820可為以塑膠為基底的積體電路元件,即為將主動元件與電路形成於如塑膠等可撓式基板上的晶片型態。晶片820的主動面為包括薄膜電晶體TFT等積體電路的形成表面,接墊可作為電性連接至晶片820內部積體電路的接點。接墊的材料包括導電材料,例如金、銀、銅、鋁、鉬、鈦或其他金屬或包含前述金屬的合金。In step S112, pick up the chip 820 on a wafer or sheet, and make the pads (not shown) of the chip 820 face upward (ie, the back surface of the chip 820 faces the substrate 800). In some embodiments, when the pads of the chip 820 on the wafer or sheet are facing the surface of the wafer, after the chip 820 is picked up, the chip 820 is turned over by 180 degrees to turn the chip 820 over. The pad is facing up. The chip 820 may include more than two pads, wherein the pads are disposed on the active surface of the chip 820. For example, the pads may be the pads LA1 and LB1 as shown in FIG. 6A, or the pads LA2 and LB2 as shown in FIG. 6B, etc. The layout of the pads can be adjusted according to design requirements. The present invention is not limited to this. In this embodiment, the chip 820 may be an integrated circuit component based on plastic, that is, a chip type in which active components and circuits are formed on a flexible substrate such as plastic. The active surface of the chip 820 is the formation surface of integrated circuits including thin film transistors, TFTs, etc., and the pads can be used as contacts that are electrically connected to the internal integrated circuits of the chip 820. The material of the pad includes conductive materials, such as gold, silver, copper, aluminum, molybdenum, titanium, or other metals or alloys containing the foregoing metals.

在步驟S114中,將晶片820放置在基板800上。在本實施例中,以晶片820的短邊方向與基板的移動方向D3之間具有一夾角的方式,將晶片820放置在黏著層810上。晶片820的短邊方向與基板的移動方向D3之間的夾角例如為小於或等於45度,較佳為0度。換句話說,晶片820的短邊方向與基板的移動方向D3較佳為彼此平行。由於收料滾筒與晶片的接觸面積越大,越容易造成後續在捲取晶片時晶片的彎曲角度過大、使收料滾筒與晶片表面之間的摩擦力過大、或者增大晶片受到收料滾筒撞擊的影響等問題,進而造成晶片的損壞。然而,藉由以晶片820的短邊方向與基板的移動方向D3之間具有夾角的方式放置晶片820,使晶片在基板的移動方向D3上的受力路徑較短、晶片的彎曲角度較小,而可大幅度降低晶片損壞的機會,進而改善良率。相對於此,若晶片820的短邊方向與基板的移動方向D3彼此垂直,則測得的良率極低,例如為小於10%。In step S114, the wafer 820 is placed on the substrate 800. In this embodiment, the chip 820 is placed on the adhesive layer 810 in such a way that there is an angle between the short side direction of the chip 820 and the moving direction D3 of the substrate. The angle between the short side direction of the wafer 820 and the moving direction D3 of the substrate is, for example, less than or equal to 45 degrees, preferably 0 degrees. In other words, the short side direction of the wafer 820 and the moving direction D3 of the substrate are preferably parallel to each other. Because the larger the contact area between the receiving roller and the wafer, the easier it is to cause the subsequent bending angle of the wafer during the subsequent winding of the wafer, causing the friction between the receiving roller and the wafer surface to be too large, or increasing the impact of the wafer by the receiving roller And other issues, which in turn caused damage to the chip. However, by placing the chip 820 with an angle between the short side direction of the chip 820 and the movement direction D3 of the substrate, the force path of the chip in the movement direction D3 of the substrate is shorter and the bending angle of the chip is smaller. It can greatly reduce the chance of chip damage, thereby improving the yield. In contrast, if the short side direction of the wafer 820 and the moving direction D3 of the substrate are perpendicular to each other, the measured yield rate is extremely low, for example, less than 10%.

在一些實施例中,在基板800還具有凹槽的情況下,晶片820例如放置於該凹槽內。據此,不僅可降低後續形成的天線裝置整體的厚度,也可避免因晶片凸出基板而容易在後續製程中破壞晶片而影響良率等問題。In some embodiments, when the substrate 800 further has a groove, the wafer 820 is placed in the groove, for example. According to this, not only can the thickness of the antenna device to be formed later be reduced, but also problems such as the wafer protruding from the substrate can be easily damaged in the subsequent manufacturing process, which affects the yield.

接著,在步驟S116中,壓合固定晶片820。在本實施例中,壓合固定的方式例如為熱壓固定,以加熱黏著層810而使其熔融後,藉此晶片820經由黏著層810固定於基板800上。Next, in step S116, the wafer 820 is pressed and fixed. In this embodiment, the method of pressing and fixing is, for example, hot pressing, to heat and melt the adhesive layer 810, whereby the wafer 820 is fixed on the substrate 800 via the adhesive layer 810.

然後,在步驟S118中,藉由收料滾筒900捲取載置有晶片820的基板800,並於印刷設備中進行後續的步驟。Then, in step S118, the substrate 800 on which the wafer 820 is placed is taken up by the take-up roller 900, and the subsequent steps are performed in the printing equipment.

圖10A與圖10B是圖9A與圖9B的下一道步驟的示意圖。10A and 10B are schematic diagrams of the next step of FIGS. 9A and 9B.

請參照圖10A與圖10B,天線形成步驟包括步驟S120、步驟S122、步驟S124、步驟S126等。10A and 10B, the antenna formation steps include step S120, step S122, step S124, step S126 and so on.

在步驟S120中,將於步驟S118中捲取的基板800,即載置有晶片820的基板800,輸入至印刷設備中。In step S120, the substrate 800 to be wound up in step S118, that is, the substrate 800 on which the wafer 820 is placed, is input into the printing device.

在步驟S122中,印刷天線830。在本實施例中,在基板800與晶片820上形成天線830,且天線830例如為螺旋狀線圈或其他形狀。天線830的兩端分別電性連接至晶片820的接墊。在一實施例中,天線830可如圖1A之天線300般包括第一接合線段310及第二接合線段320,相關說明請參照上述實施例,在此不再贅述。在本實施例中,天線830的材料例如為導電性的銀奈米油墨、石墨烯油墨或其他導電材料。印刷天線830的方法例如包括凸版印刷(Letterpress Printing)、凹版印刷(Gravure Printing)、網版印刷(Screen Printing)、微影(Lithography)、或熱轉印(thermal transfer)等方法,但本發明不限於此。In step S122, the antenna 830 is printed. In this embodiment, an antenna 830 is formed on the substrate 800 and the chip 820, and the antenna 830 is, for example, a spiral coil or other shapes. Two ends of the antenna 830 are electrically connected to the pads of the chip 820 respectively. In an embodiment, the antenna 830 may include a first bonding wire segment 310 and a second bonding wire segment 320 like the antenna 300 of FIG. 1A. For related descriptions, please refer to the above-mentioned embodiment, which will not be repeated here. In this embodiment, the material of the antenna 830 is, for example, conductive silver nano ink, graphene ink, or other conductive materials. Methods of printing the antenna 830 include, for example, Letterpress Printing, Gravure Printing, Screen Printing, Lithography, or Thermal Transfer. However, the present invention does not Limited to this.

接著,在步驟S124中,乾燥天線830,使天線830固化。在本實施例中,乾燥天線830的方法例如包括熱固化、光固化、或風乾固化等,但本發明不限於此。在一實施例中,在使天線830固化之後,可於其上形成保護層,例如形成圖1A之保護層500、或圖4A之保護層502。至此,已大致完成本實施例的天線裝置60的製作。最後,在步驟S126中,捲取天線裝置60。Next, in step S124, the antenna 830 is dried, and the antenna 830 is cured. In this embodiment, the method of drying the antenna 830 includes, for example, thermal curing, light curing, or air-drying curing, etc., but the present invention is not limited thereto. In one embodiment, after curing the antenna 830, a protective layer may be formed thereon, for example, the protective layer 500 of FIG. 1A or the protective layer 502 of FIG. 4A. So far, the fabrication of the antenna device 60 of this embodiment has been roughly completed. Finally, in step S126, the antenna device 60 is wound up.

在本實施例中,天線裝置60中基板800、晶片820與天線830的厚度分別例如為35 μm、13 μm、10 μm。在一些實施例中,在晶片820放置於凹槽內的情況下,天線裝置60的整體厚度可達小於50 μm的程度。據此,相較於傳統的天線裝置(厚度大於100 μm),不僅大幅降低天線裝置整體的厚度,也可避免因晶片凸出基板而容易在後續製程中破壞晶片而影響良率等問題。另外,相較於傳統天線裝置的製造方法,製造天線裝置60的步驟較少,而可提升製程效率。In this embodiment, the thickness of the substrate 800, the wafer 820, and the antenna 830 in the antenna device 60 are, for example, 35 μm, 13 μm, and 10 μm, respectively. In some embodiments, when the wafer 820 is placed in the groove, the overall thickness of the antenna device 60 may be less than 50 μm. Accordingly, compared with the traditional antenna device (thickness greater than 100 μm), not only the overall thickness of the antenna device is greatly reduced, but also problems such as the wafer protruding from the substrate and easily damaged in the subsequent manufacturing process and affecting the yield rate can be avoided. In addition, compared with the traditional antenna device manufacturing method, the steps of manufacturing the antenna device 60 are fewer, and the process efficiency can be improved.

圖11是依照本發明的第十實施例的一種天線裝置的製造方法的流程圖。FIG. 11 is a flowchart of a manufacturing method of an antenna device according to a tenth embodiment of the present invention.

請參照圖11,第十實施例之製造方法與第九實施例之製造方法的不同處為第十實施例之製造方法是於同一捲對捲機台中進行天線裝置的製造流程。換句話說,例如可省略第九實施例之步驟S108、步驟S118、步驟S120等步驟。藉此,可提高製程效率。步驟S200~步驟S220所省略的部分技術說明可參照圖8A、圖9A、圖10A的相關內容,在此不再贅述。Please refer to FIG. 11, the difference between the manufacturing method of the tenth embodiment and the manufacturing method of the ninth embodiment is that the manufacturing method of the tenth embodiment is the manufacturing process of the antenna device in the same roll-to-roll machine station. In other words, for example, steps S108, S118, and S120 of the ninth embodiment can be omitted. In this way, the process efficiency can be improved. For the part of the technical description omitted from step S200 to step S220, please refer to the related content of FIG. 8A, FIG. 9A, and FIG. 10A, which will not be repeated here.

圖12是依照本發明的第十一實施例的一種天線裝置的製造方法的立體示意圖,其中使用與圖8B、圖9B、圖10B相同的元件符號來代表相同或相似的構件,且所省略的部分技術說明,如各層或區域的尺寸、材料、功能等均可參照圖8B、圖9B、圖10B的相關內容,因此於下文不再贅述。12 is a perspective schematic view of a method of manufacturing an antenna device according to an eleventh embodiment of the present invention, in which the same component symbols as in FIGS. 8B, 9B, and 10B are used to represent the same or similar components, and omitted Part of the technical description, such as the size, material, function, etc. of each layer or area, can refer to the related content of FIG. 8B, FIG. 9B, and FIG. 10B, and therefore will not be described in detail below.

請參照圖12,例如可重複進行第九實施例之製造方法或第十實施例之製造方法,以在基板上形成多個天線裝置60。舉例來說,可在基板準備步驟時重複進行步驟S102或步驟S202,以形成多個黏著層於基板上,接著在晶片放置步驟時重複進行步驟S112與步驟S114或步驟S210與步驟S212,以將多個晶片放置於黏著層上,然後在天線形成步驟時重複進行步驟S122或步驟S216,以將多個天線分別形成於對應的晶片上。Referring to FIG. 12, for example, the manufacturing method of the ninth embodiment or the manufacturing method of the tenth embodiment may be repeated to form a plurality of antenna devices 60 on the substrate. For example, step S102 or step S202 can be repeated during the substrate preparation step to form multiple adhesive layers on the substrate, and then step S112 and step S114 or step S210 and step S212 can be repeated during the wafer placement step to combine A plurality of chips are placed on the adhesive layer, and then step S122 or step S216 is repeated during the antenna forming step, so that the plurality of antennas are respectively formed on the corresponding chips.

綜上所述,本發明的天線裝置藉由天線的最外圈與最內圈分別橫跨晶片,據此可以使得天線與晶片的接合較不受接墊等接合面的地貌影響,避免天線產生斷線等情形。並且,本發明的天線裝置的製造方法中,以晶片的短邊方向與收料滾筒的滾動方向之間具有一夾角的方式,將晶片放置於基板上,除了可使晶片的受力路徑較短、彎曲角度較小外,更可以進一步提升天線裝置的良率。In summary, the antenna device of the present invention uses the outermost ring and innermost ring of the antenna to respectively span the chip, so that the bonding between the antenna and the chip is less affected by the topography of the bonding surface such as the pad, and the antenna is prevented from being generated. Disconnection and other situations. Moreover, in the manufacturing method of the antenna device of the present invention, placing the wafer on the substrate in such a way that there is an angle between the short side direction of the wafer and the rolling direction of the take-up roller, in addition to making the force path of the wafer shorter , In addition to the smaller bending angle, it can further improve the yield of the antenna device.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.

10、20、30、40、50、60:天線裝置 100、800:基板 100a、302a、304a、400a、600a:表面 100b:底面 110、130、410:凹槽 110a、130a:側壁 110b、130b:底部 120:溝槽 200、820:晶片 200a:主動面 210:接墊 210a:頂面 212:第一接墊 214:第二接墊 216:第三接墊 218:第四接墊 300、302、304、830:天線 310:第一接合線段 320:第二接合線段 400、810:黏著層 500、502:保護層 600:印刷層 602:開口 700:電路結構 710:射頻區塊 712:整流器 714:調變器 720:數位區塊 722:時脈產生器 724:記憶體陣列 727:數位控制器 802:對位記號 900:收料滾筒 C:電容 D1:短邊方向 D2:長邊方向 D3:滾動方向 H1、H3、H4、H5、L1:距離 H2:厚度 LA、LA1、LA2、LB、LB1、LB2:接墊 S100~S126、S200~S220:步驟 θ1、θ2:夾角10, 20, 30, 40, 50, 60: antenna device 100, 800: substrate 100a, 302a, 304a, 400a, 600a: surface 100b: bottom surface 110, 130, 410: groove 110a, 130a: side wall 110b, 130b: bottom 120: groove 200, 820: chip 200a: active side 210: pad 210a: Top surface 212: first pad 214: second pad 216: third pad 218: fourth pad 300, 302, 304, 830: antenna 310: The first joint line segment 320: second joint line segment 400, 810: Adhesive layer 500, 502: protective layer 600: printing layer 602: open 700: circuit structure 710: RF block 712: Rectifier 714: Modulator 720: digital block 722: Clock Generator 724: Memory Array 727: Digital Controller 802: Counterpoint 900: Receiving drum C: Capacitance D1: Short side direction D2: Long side direction D3: scroll direction H1, H3, H4, H5, L1: distance H2: thickness LA, LA1, LA2, LB, LB1, LB2: pad S100~S126, S200~S220: steps θ1, θ2: included angle

圖1A是依照本發明的第一實施例的一種天線裝置的上視示意圖。 圖1B是圖1A的X1-X2線段之局部剖面示意圖。 圖1C是圖1A的Y1-Y2線段之剖面示意圖。 圖2A是依照本發明的第二實施例的一種天線裝置的上視示意圖。 圖2B是圖2A的X1-X2線段之局部剖面示意圖。 圖2C是圖2A的Y1-Y2線段之剖面示意圖。 圖3A是依照本發明的第三實施例的一種天線裝置的上視示意圖。 圖3B是圖3A的X1-X2線段之局部剖面示意圖。 圖3C是圖3A的Y1-Y2線段之剖面示意圖。 圖4A是依照本發明的第四實施例的一種天線裝置的上視示意圖。 圖4B是圖4A的X1-X2線段之局部剖面示意圖。 圖4C是圖4A的Y1-Y2線段之剖面示意圖。 圖5A至圖5D是依照本發明的第五實施例的一種天線裝置的製造方法的流程圖。 圖6A是依照本發明的第六實施例的晶片的上視示意圖。 圖6B是依照本發明的第七實施例的晶片的上視示意圖。 圖7是依照本發明的第八實施例的晶片的電路結構示意圖。 圖8A、圖9A、圖10A是依照本發明的第九實施例的一種天線裝置的製造方法的流程圖。 圖8B、圖9B、圖10B是依照本發明的第九實施例的一種天線裝置的製造方法的局部立體示意圖。 圖11是依照本發明的第十實施例的一種天線裝置的製造方法的流程圖。 圖12是依照本發明的第十一實施例的一種天線裝置的製造方法的立體示意圖。FIG. 1A is a schematic top view of an antenna device according to the first embodiment of the present invention. Fig. 1B is a schematic partial cross-sectional view of the line X1-X2 in Fig. 1A. Fig. 1C is a schematic cross-sectional view of the line Y1-Y2 in Fig. 1A. Fig. 2A is a schematic top view of an antenna device according to a second embodiment of the present invention. Fig. 2B is a schematic partial cross-sectional view of the line X1-X2 in Fig. 2A. Fig. 2C is a schematic cross-sectional view of the line Y1-Y2 in Fig. 2A. Fig. 3A is a schematic top view of an antenna device according to a third embodiment of the present invention. Fig. 3B is a schematic partial cross-sectional view of the line X1-X2 in Fig. 3A. Fig. 3C is a schematic cross-sectional view of the line Y1-Y2 in Fig. 3A. 4A is a schematic top view of an antenna device according to a fourth embodiment of the present invention. Fig. 4B is a schematic partial cross-sectional view of the line X1-X2 in Fig. 4A. Fig. 4C is a schematic cross-sectional view of the line Y1-Y2 in Fig. 4A. 5A to 5D are flowcharts of a manufacturing method of an antenna device according to a fifth embodiment of the present invention. Fig. 6A is a schematic top view of a wafer according to a sixth embodiment of the present invention. Fig. 6B is a schematic top view of a wafer according to a seventh embodiment of the present invention. FIG. 7 is a schematic diagram of a circuit structure of a chip according to an eighth embodiment of the present invention. 8A, 9A, and 10A are flowcharts of a manufacturing method of an antenna device according to a ninth embodiment of the present invention. 8B, 9B, and 10B are partial three-dimensional schematic diagrams of a manufacturing method of an antenna device according to a ninth embodiment of the present invention. FIG. 11 is a flowchart of a manufacturing method of an antenna device according to a tenth embodiment of the present invention. FIG. 12 is a perspective schematic diagram of a manufacturing method of an antenna device according to an eleventh embodiment of the present invention.

10:天線裝置10: Antenna device

100:基板100: substrate

110:凹槽110: Groove

200:晶片200: chip

210:接墊210: pad

212:第一接墊212: first pad

214:第二接墊214: second pad

216:第三接墊216: third pad

218:第四接墊218: fourth pad

300:天線300: Antenna

310:第一接合線段310: The first joint line segment

320:第二接合線段320: second joint line segment

400:黏著層400: Adhesive layer

500:保護層500: protective layer

D1:短邊方向D1: Short side direction

D2:長邊方向D2: Long side direction

Claims (20)

一種天線裝置,包括: 基板; 晶片,設置於所述基板上,所述晶片具有至少兩個接墊;以及 天線,設置於所述基板上,所述晶片位於所述基板與所述天線之間,所述天線具有分別與所述至少兩個接墊電性連接的第一接合線段及第二接合線段, 所述第一接合線段位於所述天線最外圈,以完整覆蓋所述至少兩個接墊的一者的方式橫跨所述晶片的短邊方向,所述第二接合線段位於所述天線最內圈,以完整覆蓋所述至少兩個接墊的另一者的方式橫跨所述晶片的短邊方向。An antenna device, including: Substrate A chip arranged on the substrate, the chip having at least two pads; and The antenna is disposed on the substrate, the chip is located between the substrate and the antenna, and the antenna has a first bonding wire segment and a second bonding wire segment electrically connected to the at least two pads, respectively, The first bonding wire segment is located at the outermost circle of the antenna and traverses the short side direction of the chip in a manner of completely covering one of the at least two pads, and the second bonding wire segment is located at the outermost ring of the antenna. The inner ring traverses the short side direction of the chip in a manner of completely covering the other of the at least two pads. 如請求項1所述的天線裝置,其中所述基板更具有凹槽, 所述凹槽的側壁與所述基板的底面之間具有夾角,且所述夾角為銳角。The antenna device according to claim 1, wherein the substrate further has a groove, There is an included angle between the side wall of the groove and the bottom surface of the substrate, and the included angle is an acute angle. 如請求項2所述的天線裝置,其中在位於所述凹槽處的所述基板的沖壓密度大於位於所述凹槽的周圍處的所述基板的沖壓密度。The antenna device according to claim 2, wherein the punching density of the substrate at the groove is greater than the punching density of the substrate at the periphery of the groove. 如請求項2所述的天線裝置,其中所述晶片位於所述凹槽內,且所述天線橫跨所述凹槽, 將所述至少兩個接墊的頂面與所述基板的所述底面之間的距離設為H1,將位於所述凹槽之外的所述基板的厚度設為H2,所述至少兩個接墊的所述頂面與所述基板的表面之間的距離│H1-H2│≦5 μm。The antenna device according to claim 2, wherein the chip is located in the groove, and the antenna straddles the groove, The distance between the top surface of the at least two pads and the bottom surface of the substrate is set to H1, the thickness of the substrate outside the groove is set to H2, and the at least two pads The distance between the top surface of the pad and the surface of the substrate│H1-H2│≦5 μm. 如請求項2所述的天線裝置,其中所述晶片及所述天線位於所述凹槽內, 將位於所述晶片上方的所述天線的表面與所述基板的所述底面之間的距離設為H4,將位於所述凹槽之外的所述基板的厚度設為H2,則所述天線的所述表面與所述基板的表面之間的距離│H4-H2│≦5 μm。The antenna device according to claim 2, wherein the chip and the antenna are located in the groove, Set the distance between the surface of the antenna above the chip and the bottom surface of the substrate as H4, and set the thickness of the substrate outside the groove as H2, then the antenna The distance between the surface of the substrate and the surface of the substrate│H4-H2│≦5 μm. 如請求項2所述的天線裝置,其更包括: 保護層,配置於所述晶片上,所述保護層覆蓋所述晶片、所述天線及所述基板的至少一部份,且所述保護層的面積大於所述凹槽的面積。The antenna device according to claim 2, which further includes: The protection layer is disposed on the chip, the protection layer covers at least a part of the chip, the antenna and the substrate, and the area of the protection layer is larger than the area of the groove. 如請求項1所述的天線裝置,其更包括: 黏著層,位於所述基板與所述晶片之間。The antenna device according to claim 1, which further includes: The adhesive layer is located between the substrate and the chip. 如請求項7所述的天線裝置,其更包括: 所述黏著層的面積大於所述晶片的面積, 所述晶片埋設於所述黏著層的一部分內,使得位於所述基板與所述晶片之間的所述黏著層的厚度小於位於所述晶片周邊的所述黏著層的厚度。The antenna device according to claim 7, which further includes: The area of the adhesive layer is greater than the area of the chip, The chip is buried in a part of the adhesion layer, so that the thickness of the adhesion layer between the substrate and the chip is smaller than the thickness of the adhesion layer on the periphery of the chip. 如請求項1所述的天線裝置,其更包括: 印刷層,位於所述基板上, 所述印刷層具有開口,所述晶片位於所述開口內,且所述印刷層的表面與所述晶片的主動面實質上為共平面。The antenna device according to claim 1, which further includes: The printing layer is located on the substrate, The printing layer has an opening, the chip is located in the opening, and the surface of the printing layer and the active surface of the chip are substantially coplanar. 如請求項1至請求項9中任一項所述的天線裝置,其中所述基板更包括溝槽, 所述溝槽鄰近所述晶片的短邊,且與所述晶片相隔一距離, 所述溝槽的長度大於或等於所述晶片的寬度。The antenna device according to any one of claim 1 to claim 9, wherein the substrate further includes a groove, The groove is adjacent to the short side of the wafer and is separated from the wafer by a distance, The length of the groove is greater than or equal to the width of the wafer. 如請求項1所述的天線裝置,其中所述至少兩個接墊包括第一接墊及第二接墊, 所述第一接墊位於所述晶片的短邊上,所述第二接墊位於所述晶片的另一短邊上, 所述第一接合線段完整覆蓋所述第一接墊,且所述第二接合線段完整覆蓋所述第二接墊。The antenna device according to claim 1, wherein the at least two pads include a first pad and a second pad, The first pad is located on the short side of the chip, and the second pad is located on the other short side of the chip, The first bonding wire segment completely covers the first pad, and the second bonding wire segment completely covers the second pad. 一種天線裝置的製造方法,包括: 基板準備步驟,形成基板; 晶片放置步驟,所述基板以捲對捲的方式移動,並將晶片放置於所述基板上,所述晶片具有至少兩個接墊,所述晶片的短邊方向與所述基板的移動方向之間具有夾角,所述夾角小於或等於45度;以及 天線形成步驟,形成天線於所述基板上,所述晶片位於所述基板與所述天線之間,所述天線具有分別與所述至少兩個接墊電性連接的第一接合線段及第二接合線段, 所述第一接合線段位於所述天線最外圈,以完整覆蓋所述至少兩個接墊的一者的方式橫跨所述晶片的短邊方向,所述第二接合線段位於所述天線最內圈,以完整覆蓋所述至少兩個接墊的另一者的方式橫跨所述晶片的短邊方向。A manufacturing method of an antenna device includes: The substrate preparation step, forming the substrate; In the wafer placing step, the substrate is moved in a roll-to-roll manner, and the wafer is placed on the substrate, the wafer has at least two pads, and the short side direction of the wafer is different from the moving direction of the substrate There is an included angle between, the included angle is less than or equal to 45 degrees; and In the antenna forming step, an antenna is formed on the substrate, the chip is located between the substrate and the antenna, and the antenna has a first bonding wire segment and a second bonding wire that are electrically connected to the at least two pads, respectively. Joining line segments, The first bonding wire segment is located at the outermost circle of the antenna and traverses the short side direction of the chip in a manner of completely covering one of the at least two pads, and the second bonding wire segment is located at the outermost ring of the antenna. The inner ring traverses the short side direction of the chip in a manner of completely covering the other of the at least two pads. 如請求項12所述的天線裝置的製造方法,其中在所述基板準備步驟中,更包括: 凹槽形成步驟,在所述基板中對應於所述晶片或所述天線的預定形成區域形成凹槽, 所述凹槽的側壁與所述基板的底面之間具有夾角,且所述夾角為銳角。The method for manufacturing an antenna device according to claim 12, wherein the substrate preparation step further includes: A groove forming step, forming a groove in the substrate corresponding to a predetermined formation area of the wafer or the antenna, There is an included angle between the side wall of the groove and the bottom surface of the substrate, and the included angle is an acute angle. 如請求項13所述的天線裝置的製造方法,其中在所述天線形成步驟之後,更包括: 形成保護層於所述晶片上,所述保護層覆蓋所述晶片、所述天線及所述基板的至少一部份,且所述保護層的面積大於所述凹槽的面積。The method for manufacturing an antenna device according to claim 13, wherein after the antenna forming step, the method further includes: A protective layer is formed on the chip, the protective layer covers at least a part of the chip, the antenna and the substrate, and the area of the protective layer is larger than the area of the groove. 如請求項12所述的天線裝置的製造方法,其中在所述基板準備步驟中,更包括: 對應於所述晶片的預定形成區域,在所述基板上形成黏著層。The method for manufacturing an antenna device according to claim 12, wherein the substrate preparation step further includes: Corresponding to the predetermined formation area of the wafer, an adhesive layer is formed on the substrate. 如請求項15所述的天線裝置的製造方法,其中所述黏著層的面積大於所述晶片的面積, 在所述晶片放置步驟中,所述晶片埋設於所述黏著層的一部分內,使得位於所述基板與所述晶片之間的所述黏著層的厚度小於位於所述晶片周邊的所述黏著層的厚度。The method of manufacturing an antenna device according to claim 15, wherein the area of the adhesive layer is larger than the area of the chip, In the wafer placement step, the wafer is buried in a part of the adhesive layer, so that the thickness of the adhesive layer between the substrate and the wafer is smaller than that of the adhesive layer at the periphery of the wafer thickness of. 如請求項12所述的天線裝置的製造方法,其中在所述基板準備步驟之後,更包括: 印刷層形成步驟,在所述基板上形成具有開口的印刷層, 在所述晶片放置步驟中,將所述晶片放置於所述開口內,且所述印刷層的表面與所述晶片的主動面實質上為共平面。The method for manufacturing an antenna device according to claim 12, wherein after the substrate preparation step, the method further includes: The printing layer forming step is to form a printing layer with openings on the substrate, In the wafer placement step, the wafer is placed in the opening, and the surface of the printed layer and the active surface of the wafer are substantially coplanar. 如請求項12所述的天線裝置的製造方法,其中在所述基板準備步驟中,更包括: 溝槽形成步驟,在所述基板中鄰近所述晶片的預定形成區域的短邊形成溝槽,且所述溝槽與所述預定形成區域相隔一距離。The method for manufacturing an antenna device according to claim 12, wherein the substrate preparation step further includes: In the groove forming step, a groove is formed in the substrate adjacent to the short side of the predetermined formation area of the wafer, and the groove is separated from the predetermined formation area by a distance. 如請求項18所述的天線裝置的製造方法,其中所述溝槽的長度大於或等於所述晶片的寬度。The method for manufacturing an antenna device according to claim 18, wherein the length of the groove is greater than or equal to the width of the wafer. 如請求項12所述的天線裝置的製造方法,其中所述至少兩個接墊包括第一接墊及第二接墊, 所述第一接墊位於所述晶片的一短邊上,所述第二接墊位於所述晶片的另一短邊上, 所述天線的所述第一接合線段及所述第二接合線段分別完整覆蓋所述第一接墊及所述第二接墊。The method of manufacturing an antenna device according to claim 12, wherein the at least two pads include a first pad and a second pad, The first pad is located on one short side of the chip, and the second pad is located on the other short side of the chip, The first bonding wire segment and the second bonding wire segment of the antenna completely cover the first pad and the second pad, respectively.
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