TW202033974A - Inspecting device and its socket - Google Patents
Inspecting device and its socket Download PDFInfo
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- TW202033974A TW202033974A TW108108084A TW108108084A TW202033974A TW 202033974 A TW202033974 A TW 202033974A TW 108108084 A TW108108084 A TW 108108084A TW 108108084 A TW108108084 A TW 108108084A TW 202033974 A TW202033974 A TW 202033974A
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- 239000000523 sample Substances 0.000 claims abstract description 141
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 26
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000007689 inspection Methods 0.000 claims 2
- 239000003990 capacitor Substances 0.000 abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000013100 final test Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
Description
本發明有關於一種檢測裝置,尤指一種能夠改善電容元件與待測元件之間距的檢測裝置。 The present invention relates to a detection device, in particular to a detection device capable of improving the distance between a capacitive element and an element to be measured.
一般而言,半導體晶片在製作完成後,會對半導體晶片進行最終測試(FT,Final Test),以確保半導體晶片在出貨時的品質。在進行電性檢測時,會藉由一測試裝置之多數個探針分別觸壓每個半導體晶片之導電接點,以便將不良的半導體晶片篩選出來。 Generally speaking, after the semiconductor wafer is manufactured, a final test (FT, Final Test) is performed on the semiconductor wafer to ensure the quality of the semiconductor wafer when it is shipped. During electrical testing, a plurality of probes of a testing device are used to individually touch the conductive contacts of each semiconductor chip, so as to screen out defective semiconductor chips.
在上述最終測試中,為了維持電源與訊號之完整性,測試裝置之載板上通常會設置電容元件,例如去耦電容(decoupling capacitor)或旁路電容(bypass capacitor),以補償瞬態壓降且保持電壓水平。 In the above-mentioned final test, in order to maintain the integrity of the power supply and the signal, capacitive elements, such as decoupling capacitors or bypass capacitors, are usually installed on the test device's carrier to compensate for transient voltage drops. And maintain the voltage level.
故,如何讓電容元件能夠表現出最大功效,以確保獲得良好的電源完整性質量,是現在半導體測試技術需要突破的課題。 Therefore, how to make the capacitive element show the maximum efficiency to ensure good power integrity quality is a topic that needs to be broken through in semiconductor testing technology.
本發明之一實施例提供了一種檢測裝置。檢測裝置包含一載板、一晶片容置部、一配線板、多個伸縮探針與多個電容元件。晶片容置部用以固持一半導體晶片。配線板位於載板與晶片容置部之間。這些伸縮探針平行地穿過配線板。每個伸縮探針用以連接半導體晶片與載板。這些電容元件分布於配線板上。每個電容元件透過配線板電連接任二個相鄰之伸縮探針,且此二個伸縮探針分別用以連接半導體晶片之一電源接點與一接地接點。 An embodiment of the present invention provides a detection device. The detection device includes a carrier board, a chip accommodating part, a wiring board, a plurality of retractable probes and a plurality of capacitance elements. The chip accommodating part is used for holding a semiconductor chip. The wiring board is located between the carrier board and the chip accommodating part. These telescopic probes pass through the wiring board in parallel. Each telescopic probe is used to connect the semiconductor chip and the carrier. These capacitive elements are distributed on the wiring board. Each capacitive element is electrically connected to any two adjacent telescopic probes through the wiring board, and the two telescopic probes are respectively used to connect a power contact and a ground contact of the semiconductor chip.
依據本發明一或複數個實施例,在上述之檢測裝置中,檢測裝置更包含一探針座。探針座包含一頂面與一底面。頂面與底面相對配置。底面位於載板上,晶片容置部為頂面上形成之一晶片槽。配線板位於探針座內,較探針座之底面更接近探針座之頂面,且伸縮探針平行地位於探針座內。 According to one or more embodiments of the present invention, in the aforementioned detection device, the detection device further includes a probe holder. The probe base includes a top surface and a bottom surface. The top surface is arranged opposite to the bottom surface. The bottom surface is located on the carrier board, and the wafer accommodating portion is a wafer groove formed on the top surface. The wiring board is located in the probe base, which is closer to the top surface of the probe base than the bottom surface of the probe base, and the telescopic probe is located in the probe base in parallel.
依據本發明一或複數個實施例,在上述之檢測裝置中,配線板包含一板體、多個貫孔與多個導電墊。板體具有相對之第一面與第二面。第一面面向晶片容置部。每個貫孔貫穿板體,且連接第一面與第二面,以容置其中一伸縮探針。這些導電墊位於板體之第一面。每個導電墊圍繞其中之一貫孔,且電連接其中一伸縮探針。 According to one or more embodiments of the present invention, in the above-mentioned detection device, the wiring board includes a board body, a plurality of through holes and a plurality of conductive pads. The board has a first surface and a second surface opposite to each other. The first surface faces the wafer accommodating part. Each through hole penetrates the board body and connects the first surface and the second surface to accommodate one of the telescopic probes. These conductive pads are located on the first side of the board. Each conductive pad surrounds one of the through holes and is electrically connected to one of the telescopic probes.
依據本發明一或複數個實施例,在上述之檢測裝置中,配線板更包含多個導電耐磨層。這些導電耐磨層分別位於這些貫孔內,且每個導電耐磨層圍繞並接觸其中一伸縮探針。 According to one or more embodiments of the present invention, in the above-mentioned detection device, the wiring board further includes a plurality of conductive wear-resistant layers. The conductive wear-resistant layers are respectively located in the through holes, and each conductive wear-resistant layer surrounds and contacts one of the telescopic probes.
依據本發明一或複數個實施例,在上述之檢測裝置中,每個導電耐磨層更伸出對應之貫孔,且覆蓋於對應之導電墊上。 According to one or more embodiments of the present invention, in the above-mentioned detection device, each conductive wear-resistant layer extends beyond the corresponding through hole and covers the corresponding conductive pad.
依據本發明一或複數個實施例,在上述之檢測裝置中,配線板更包含多個導電膠。每個導電膠將其中一導電耐磨層附著於板體上,且電連接其中一導電墊以及其中一導電耐磨層。 According to one or more embodiments of the present invention, in the above-mentioned detection device, the wiring board further includes a plurality of conductive adhesives. Each conductive adhesive attaches one of the conductive wear-resistant layers to the board, and is electrically connected to one of the conductive pads and one of the conductive wear-resistant layers.
依據本發明一或複數個實施例,在上述之檢測裝置中,每個伸縮探針包含一靜止針體、一活動針體及一彈簧。靜止針體之一端伸至載板,另端具有一凹槽。活動針體可伸縮地位於凹槽以及其中一貫孔內,且接觸其中一導電耐磨層。彈簧位於凹槽內,連接靜止針體與活動針體。其中一電容元件位於任二相鄰之活動針體之間。 According to one or more embodiments of the present invention, in the aforementioned detection device, each telescopic probe includes a stationary needle body, a movable needle body and a spring. One end of the stationary needle body extends to the carrier board, and the other end has a groove. The movable needle body is telescopically located in the groove and one of the through holes, and contacts one of the conductive wear-resistant layers. The spring is located in the groove and connects the stationary needle body and the movable needle body. One of the capacitor elements is located between any two adjacent movable needle bodies.
依據本發明一或複數個實施例,在上述之檢測裝置中,每個電容元件介於上述二個伸縮探針之間。 According to one or more embodiments of the present invention, in the aforementioned detection device, each capacitive element is interposed between the aforementioned two retractable probes.
本發明之另一實施例提供了一種探針座。探針座包含一承座、一配線板、一電容元件、一電源探針與一接地探針。承座包含相對配置之一頂面與一底面。頂面具有一晶片容置部。配線板位於承座內部。電源探針位於承座內部,且穿過配線板。接地探針位於承座內部,穿過配線板,且為最鄰近電源探針之探針。電容元件焊設於配線板上,位於電源探針與接地探針之一側,且透過配線板電連接電源探針與接地探針。 Another embodiment of the present invention provides a probe holder. The probe holder includes a bearing seat, a wiring board, a capacitive element, a power probe and a ground probe. The bearing includes a top surface and a bottom surface which are arranged oppositely. The top face has a chip accommodating part. The distribution board is located inside the socket. The power probe is located inside the socket and passes through the wiring board. The ground probe is located inside the socket, passes through the wiring board, and is the probe closest to the power probe. The capacitive element is welded on the wiring board, located on one side of the power probe and the ground probe, and is electrically connected to the power probe and the ground probe through the wiring board.
依據本發明一或複數個實施例,在上述之探針座中,配線板包含一板體、一第一貫孔、一第二貫孔、一第一導 電墊與一第二導電墊。板體具有相對之第一面與第二面。第一面面向容置部。第一貫孔貫穿板體,且連接第一面與第二面,以容置電源探針。第一導電墊位於第一面,圍繞第一貫孔,且電連接電源探針。第二貫孔貫穿板體,且連接第一面與第二面,以容置接地探針。第二導電墊位於第一面,圍繞第二貫孔,且電連接接地探針。 According to one or more embodiments of the present invention, in the above-mentioned probe holder, the wiring board includes a board, a first through hole, a second through hole, and a first guide The electric pad and a second conductive pad. The board has a first surface and a second surface opposite to each other. The first side faces the accommodating part. The first through hole penetrates the board body and connects the first surface and the second surface to accommodate the power probe. The first conductive pad is located on the first surface, surrounds the first through hole, and is electrically connected to the power probe. The second through hole penetrates the board body and connects the first surface and the second surface to accommodate the ground probe. The second conductive pad is located on the first surface, surrounds the second through hole, and is electrically connected to the ground probe.
依據本發明一或複數個實施例,在上述之探針座中,配線板更包含一第一導電耐磨層與一第二導電耐磨層。第一導電耐磨層位於第一貫孔內,圍繞且接觸電源探針。第二導電耐磨層位於第二貫孔內,圍繞且接觸接地探針。 According to one or more embodiments of the present invention, in the above-mentioned probe holder, the wiring board further includes a first conductive wear-resistant layer and a second conductive wear-resistant layer. The first conductive wear-resistant layer is located in the first through hole, surrounds and contacts the power probe. The second conductive wear-resistant layer is located in the second through hole, surrounds and contacts the ground probe.
依據本發明一或複數個實施例,在上述之探針座中,第一導電耐磨層位於第一導電墊及第一貫孔之內壁上,第二導電耐磨層位於第二導電墊及第二貫孔之內壁上。 According to one or more embodiments of the present invention, in the above-mentioned probe holder, the first conductive wear-resistant layer is located on the inner wall of the first conductive pad and the first through hole, and the second conductive wear-resistant layer is located on the second conductive pad And on the inner wall of the second through hole.
依據本發明一或複數個實施例,在上述之探針座中,配線板更包含一第一導電膠及一第二導電膠。第一導電膠將第一導電耐磨層附著於板體上,且電連接第一導電墊及第一導電耐磨層。第二導電膠將第二導電耐磨層附著於板體上,且電連接第二導電墊及第二導電耐磨層。 According to one or more embodiments of the present invention, in the above-mentioned probe holder, the wiring board further includes a first conductive adhesive and a second conductive adhesive. The first conductive adhesive attaches the first conductive wear-resistant layer to the board and electrically connects the first conductive pad and the first conductive wear-resistant layer. The second conductive adhesive attaches the second conductive wear-resistant layer to the board and electrically connects the second conductive pad and the second conductive wear-resistant layer.
依據本發明一或複數個實施例,在上述之探針座中,電源探針包含一第一靜止針體、一第一活動針體及一第一彈簧。第一靜止針體之一端具有一第一凹槽。第一活動針體可伸縮地位於第一凹槽及第一貫孔內,且接觸第一導電耐磨層。第一彈簧位於第一凹槽內,連接第一靜止針體與第一活動針體。 According to one or more embodiments of the present invention, in the above-mentioned probe holder, the power probe includes a first stationary needle body, a first movable needle body and a first spring. One end of the first stationary needle body has a first groove. The first movable needle body is telescopically located in the first groove and the first through hole, and contacts the first conductive wear-resistant layer. The first spring is located in the first groove and connects the first stationary needle body and the first movable needle body.
依據本發明一或複數個實施例,接地探針包含一第二靜止針體、一第二活動針體及一第二彈簧。第二靜止針體之一端具有一第二凹槽。第二活動針體可伸縮地位於第二凹槽及第二貫孔內,且接觸第二導電耐磨層。第二彈簧位於第二凹槽內,連接第二靜止針體與第二活動針體。電容元件位於第一活動針體與第二活動針體之間。 According to one or more embodiments of the present invention, the ground probe includes a second stationary needle body, a second movable needle body and a second spring. One end of the second stationary needle body has a second groove. The second movable needle body is telescopically located in the second groove and the second through hole, and contacts the second conductive wear-resistant layer. The second spring is located in the second groove and connects the second stationary needle body and the second movable needle body. The capacitance element is located between the first movable needle body and the second movable needle body.
依據本發明一或複數個實施例,電容元件較承座之底面更接近承座之頂面。 According to one or more embodiments of the present invention, the capacitive element is closer to the top surface of the socket than the bottom surface of the socket.
如此,藉由上述將電容元件整合至探針層內之架構,縮短了電容元件與半導體晶片之間距,不僅提供可靠的訊號完整性,更能夠降低電容元件之維修困難度。 In this way, through the above-mentioned structure of integrating the capacitor element into the probe layer, the distance between the capacitor element and the semiconductor chip is shortened, which not only provides reliable signal integrity, but also reduces the maintenance difficulty of the capacitor element.
以上所述僅係用以闡述本發明所欲解決的問題、解決問題的技術手段、及其產生的功效等等,本發明之具體細節將在下文的實施例及相關圖式中詳細介紹。 The above description is only used to illustrate the problem to be solved by the present invention, the technical means to solve the problem, and the effects produced by it, etc. The specific details of the present invention will be described in detail in the following embodiments and related drawings.
10‧‧‧檢測裝置 10‧‧‧Detection device
100‧‧‧載板 100‧‧‧Carrier Board
110‧‧‧接點 110‧‧‧Contact
200‧‧‧探針座 200‧‧‧Probe holder
210‧‧‧承座 210‧‧‧Seat
211‧‧‧頂面 211‧‧‧Top surface
212‧‧‧底面 212‧‧‧Bottom
220‧‧‧內部空間 220‧‧‧Internal space
230‧‧‧柱狀槽 230‧‧‧Cylindrical slot
240‧‧‧晶片容置部 240‧‧‧Chip accommodating part
241‧‧‧晶片槽 241‧‧‧chip slot
300‧‧‧配線板 300‧‧‧Wiring board
310‧‧‧板體 310‧‧‧Board
311‧‧‧第一面 311‧‧‧The first side
312‧‧‧第二面 312‧‧‧Second side
321‧‧‧第一貫孔 321‧‧‧First through hole
322‧‧‧第一導電墊 322‧‧‧First conductive pad
323‧‧‧第一導電耐磨層 323‧‧‧First conductive wear-resistant layer
324‧‧‧第一導電膠 324‧‧‧The first conductive adhesive
325‧‧‧第一走線 325‧‧‧First trace
331‧‧‧第二貫孔 331‧‧‧Second through hole
332‧‧‧第二導電墊 332‧‧‧Second conductive pad
333‧‧‧第二導電耐磨層 333‧‧‧Second conductive wear-resistant layer
334‧‧‧第二導電膠 334‧‧‧Second conductive adhesive
335‧‧‧第二走線 335‧‧‧Second trace
400‧‧‧伸縮探針 400‧‧‧Retractable Probe
400A‧‧‧電源探針 400A‧‧‧Power Probe
410‧‧‧第一靜止針體 410‧‧‧The first stationary needle
411‧‧‧第一凹槽 411‧‧‧First groove
412‧‧‧第一下針端 412‧‧‧First lower needle end
420‧‧‧第一活動針體 420‧‧‧The first movable needle
421‧‧‧第一上針端 421‧‧‧First upper needle end
430‧‧‧第一彈簧 430‧‧‧First spring
400B‧‧‧接地探針 400B‧‧‧Ground probe
440‧‧‧第二靜止針體 440‧‧‧Second stationary needle
441‧‧‧第二凹槽 441‧‧‧Second groove
442‧‧‧第二下針端 442‧‧‧Second lower needle end
450‧‧‧第二活動針體 450‧‧‧Second movable needle
451‧‧‧第二上針端 451‧‧‧Second upper needle end
460‧‧‧第二彈簧 460‧‧‧Second spring
500‧‧‧電容元件 500‧‧‧Capacitor element
600‧‧‧半導體晶片 600‧‧‧Semiconductor chip
610‧‧‧接點 610‧‧‧Contact
610A‧‧‧電源接點 610A‧‧‧Power contact
610B‧‧‧接地接點 610B‧‧‧Ground contact
AA‧‧‧線段 AA‧‧‧line segment
Z‧‧‧間隔區 Z‧‧‧Interval
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖為本發明一實施例之檢測裝置之示意圖;第2圖為本發明一實施例之配線板之上視圖;第3圖為第2圖沿線段AA所製成之剖視圖;以及第4圖為第3圖之使用操作圖。 In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious and understandable, the description of the accompanying drawings is as follows: Figure 1 is a schematic diagram of a detection device according to an embodiment of the present invention; Figure 2 is A top view of a wiring board according to an embodiment of the invention; Fig. 3 is a cross-sectional view taken along line AA in Fig. 2; and Fig. 4 is a use operation diagram of Fig. 3.
以下將以圖式揭露本發明之複數個實施例,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明實施例中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 Hereinafter, a plurality of embodiments of the present invention will be disclosed in drawings. For clear description, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit the present invention. That is to say, in the embodiment of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventionally used structures and elements will be shown in a simple schematic manner in the drawings.
第1圖為本發明一實施例之檢測裝置10之示意圖。如第1圖所示,檢測裝置10用以對一待測物進行檢測,且待測物例如為半導體晶片600。檢測裝置10包含一載板100、一晶片容置部240、一配線板300、多個伸縮探針400與多個電容元件500。晶片容置部240用以固持一半導體晶片600。配線板300位於載板100與晶片容置部240之間。這些伸縮探針400平行地穿過配線板300。每個伸縮探針400之一端連接載板100之一接點110,另端連接晶片容置部240,用以抵接半導體晶片600之一接點610(如焊球或焊墊)。這些電容元件500分布於配線板300上,且每個電容元件500透過配線板300之走線電連接任二個相鄰之伸縮探針400。例如,電容元件500位於任二個相鄰之伸縮探針400之間。
Figure 1 is a schematic diagram of a
須了解到,上述此二相鄰之伸縮探針400分別用以抵接半導體晶片600之其中一電源接點610A與其中一接地接點610B,以分別傳輸電源訊號與接地訊號。故,以下將此些相鄰之伸縮探針400分別稱為電源探針400A與接地探針400B。
It should be understood that the two adjacent
如此,由於本實施例將作為去耦合電容
(Decoupling Capacitor)之電容元件500整合至探針層(即探針位置處),藉此縮短了電容元件500與半導體晶片600之間距,從而減小電源干擾的現象,不僅提供更可靠的訊號完整性,更能夠降低電容元件500之維修困難度。
So, because this embodiment will be used as a decoupling capacitor
(Decoupling Capacitor) The
更具體地,在本實施例中,檢測裝置10更包含一探針座200。探針座200包含一承座210。承座210具有相對配置之一頂面211與一底面212。底面212位於載板100上,且晶片容置部240例如為頂面211上所凹設之晶片槽241,用以放置上述之半導體晶片600。配線板300位於探針座200內,且位於承座210內部。相較於探針座200之底面212,配線板300(即電容元件500)之位置更接近探針座200之頂面211。此些伸縮探針400並排地位於承座210內部,且彼此平行地穿過配線板300。然而,本發明不限於配線板300與之伸縮探針400位置。舉例來說,探針座200內具有一內部空間220以及多個柱狀槽230。柱狀槽230彼此平行,且連接內部空間220。配線板300固定於內部空間220內,且此些伸縮探針400分別固定於柱狀槽230內。
More specifically, in this embodiment, the
然而,本發明不限於此,在其他實施例中,檢測裝置10亦可能省略探針座200,使得任意框架作為承載半導體晶片600之晶片容置部240;或者,配線板300也可以在射出成型程序時埋設於探針座200內。
However, the present invention is not limited to this. In other embodiments, the
第2圖為本發明一實施例之配線板300之上視圖。第3圖為第2圖沿線段AA所製成之剖視圖。如第2圖所示,電容元件500不位於上述電源探針400A與接地探針400B之間,而
是位於上述電源探針400A與接地探針400B之同側。具體來說,如第2圖之四個伸縮探針400可以圍繞且定義出一間隔區Z時,電容元件500至少位於鄰近上述電源探針400A與接地探針400B之間隔區Z內。
FIG. 2 is a top view of a
如第2圖與第3圖所示,配線板300包含一板體310、多個貫孔(例如第一貫孔321與第二貫孔331,第3圖)與多個導電墊(例如第一導電墊322與第二導電墊332,第2圖與第3圖)。板體310具有相對之第一面311與第二面312。第一面311面向晶片容置部240(第1圖)。舉例來說,板體310為薄型板,其厚度例如為0.15至0.25毫米之範圍內。第一貫孔321貫穿板體310,且連接第一面311與第二面312,以容置電源探針400A。第一導電墊322位於第一面311,圍繞第一貫孔321,且電連接電源探針400A。第二貫孔331貫穿板體310,且連接第一面311與第二面312,以容置接地探針400B。第二導電墊332位於第一面311,圍繞第二貫孔331,且電連接接地探針400B。舉例來說,第一導電墊322與第二導電墊332分別呈環狀,且包含銀、銅或其合金,或者,銅、鎳或金等常見高導電材料。
As shown in FIGS. 2 and 3, the
如第3圖所示,電源探針400A位於第一貫孔321內,且電連接第一導電墊322。電源探針400A例如為一可伸縮同軸彈性針。接地探針400B位於第二貫孔331內,且電連接第二導電墊332。接地探針400B例如為一可伸縮同軸彈性針。故,其中一電容元件500透過對應之第一導電墊322、第二導電墊332、第一走線325與第二走線335分別電連接電源探針
400A與接地探針400B。
As shown in FIG. 3, the
更具體地,電源探針400A包含一第一靜止針體410、一第一活動針體420及一第一彈簧430。第一靜止針體410之一端具有一第一凹槽411,其另端具有一第一下針端412。第一活動針體420之一端可伸縮地位於第一凹槽411及第一貫孔321內,且電連接第一導電墊322,其另端具有一第一上針端421。第一上針端421用以抵接半導體晶片600之所述電源接點610A。第一彈簧430位於第一凹槽411內,且連接第一靜止針體410與第一活動針體420。接地探針400B包含一第二靜止針體440、一第二活動針體450及一第二彈簧460。第二靜止針體440之一端具有一第二凹槽441,其另端具有一第二下針端442。第二活動針體450之一端可伸縮地位於第二凹槽441及第二貫孔331內,且電連接第二導電墊332,其另端具有一第二上針端451。第二上針端451用以抵接半導體晶片600之所述接地接點610B。第二彈簧460位於第二凹槽441內,且連接第二靜止針體440與第二活動針體450。
More specifically, the
第4圖為第3圖之使用操作圖。如此,如第4圖所示,當半導體晶片600放入晶片容置部240,且朝下壓迫所述電源探針400A與接地探針400B時,半導體晶片600之所述電源接點610A與接地接點610B分別壓下所述第一活動針體420與第二活動針體450,使得所述第一活動針體420能夠於第一貫孔321內朝下方縮入第一凹槽411內、所述第二活動針體450能夠於第二貫孔331內朝下方縮入第二凹槽441內,以便進行對應之測試行為。反之,待半導體晶片600離開晶片容置部240
時,第一彈簧430將所述第一活動針體420於第一貫孔321內朝上方推回原位,且第二彈簧460將所述第二活動針體450於第二貫孔331內朝上方推回原位。
Figure 4 is the operation diagram of Figure 3. Thus, as shown in FIG. 4, when the
此外,上述之配線板300更包含多個導電耐磨層(例如第一導電耐磨層323與第二導電耐磨層333,第3圖)。第一導電耐磨層323位於第一貫孔321之內壁上,且第一導電耐磨層323圍繞及接觸電源探針400A。更具體地,第一導電耐磨層323接觸電源探針400A之第一活動針體420。第一導電耐磨層323位於第一導電墊322及第一貫孔321之內壁上,意即,第一導電耐磨層323不只位於第一導電墊322,且第一導電耐磨層323從第一貫孔321內延伸至第一導電墊322,且覆蓋於第一導電墊322上。舉例來說,第一導電膠324將第一導電耐磨層323附著於板體310上,且電連接第一導電墊322及第一導電耐磨層323,使得第一導電耐磨層323透過第一導電膠324形成於第一貫孔321之內壁與第一導電墊322上。第一導電膠324例如為導電銀膠。
In addition, the
第二導電耐磨層333位於第二貫孔331之內壁上,且第二導電耐磨層333圍繞及接觸接地探針400B。更具體地,第二導電耐磨層333接觸接地探針400B之第二活動針體450。第二導電耐磨層333位於第二導電墊332及第二貫孔331之內壁上,意即,第二導電耐磨層333不只位於第二導電墊332,且第二導電耐磨層333從第二貫孔331內延伸至第二導電墊332,且覆蓋於第二導電墊332上。舉例來說,第二導電膠334將第二導電耐磨層333附著於板體310上,且電連接第二導
電墊332及第二導電耐磨層333,使得第二導電耐磨層333透過第二導電膠334形成於第二貫孔331之內壁與第二導電墊332上。第二導電膠334例如為導電銀膠。
The second conductive wear-
舉例來說,第一導電耐磨層323與第二導電耐磨層333分別呈環狀,且第一導電耐磨層323與第二導電耐磨層333分別包含例如銀石墨合金。銀石墨合金為銀基含有石墨成分的二元合金,具有良好的導電性、優良的耐磨性和自潤滑性、接觸電阻低且高穩定性。銀石墨合金例如是由銀粉和石墨粉均勻混合後,經壓制成型和燒結而成。
For example, the first conductive wear-
如此,如第4圖所示,由於第一貫孔321與第二貫孔331內分別設置有第一導電耐磨層323與第二導電耐磨層333,即便多次壓放第一活動針體420與第二活動針體450,仍不致損害配線板300,進而必避免縮短配線板300之使用壽命。
Thus, as shown in Figure 4, since the first through
此外,上述各實施例中,這些電容元件500分別為多層陶瓷電容(Multilayer Ceramic Capacitor,MLCC),且其體積為0.25 x 0.125 x 0.125毫米,或是,0.4x0.2x0.2毫米,且其額定電壓為6.3至25伏(V)之範圍內。電容值為0.2至10000皮法拉之範圍內。然而,本發明不限於此,在其他實施例中,電容元件500也可以為寄生電容、具有交叉指形(interdigitated)電極之電容或是任何其他以具圖案化之至少一導電電極形成之電容。
In addition, in the foregoing embodiments, the
最後,上述所揭露之各實施例中,並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,皆可被保護於本發明中。因此 本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Finally, the various embodiments disclosed above are not intended to limit the present invention. Anyone who is familiar with this technique can make various changes and modifications without departing from the spirit and scope of the present invention, and can be protected in this invention. Inventing. therefore The scope of protection of the present invention shall be subject to those defined by the attached patent scope.
10‧‧‧檢測裝置 10‧‧‧Detection device
100‧‧‧載板 100‧‧‧Carrier Board
110‧‧‧接點 110‧‧‧Contact
200‧‧‧探針座 200‧‧‧Probe holder
210‧‧‧承座 210‧‧‧Seat
211‧‧‧頂面 211‧‧‧Top surface
212‧‧‧底面 212‧‧‧Bottom
220‧‧‧內部空間 220‧‧‧Internal space
230‧‧‧柱狀槽 230‧‧‧Cylindrical slot
240‧‧‧晶片容置部 240‧‧‧Chip accommodating part
241‧‧‧晶片槽 241‧‧‧chip slot
300‧‧‧配線板 300‧‧‧Wiring board
400‧‧‧伸縮探針 400‧‧‧Retractable Probe
500‧‧‧電容元件 500‧‧‧Capacitor element
600‧‧‧半導體晶片 600‧‧‧Semiconductor chip
610‧‧‧接點 610‧‧‧Contact
610A‧‧‧電源接點 610A‧‧‧Power contact
610B‧‧‧接地接點 610B‧‧‧Ground contact
Claims (16)
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| TW202033974A true TW202033974A (en) | 2020-09-16 |
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Cited By (1)
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| TWI852847B (en) * | 2023-11-24 | 2024-08-11 | 欣興電子股份有限公司 | Probe card |
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| TW456074B (en) * | 1998-02-17 | 2001-09-21 | Advantest Corp | IC socket |
| US7102367B2 (en) * | 2002-07-23 | 2006-09-05 | Fujitsu Limited | Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof |
| US7663387B2 (en) * | 2007-09-27 | 2010-02-16 | Yokowo Co., Ltd. | Test socket |
| US8912812B2 (en) * | 2009-06-02 | 2014-12-16 | Hsio Technologies, Llc | Compliant printed circuit wafer probe diagnostic tool |
| EP3304110A4 (en) * | 2015-05-29 | 2019-01-23 | R&D Circuits Inc. | Improved power supply transient performance (power integrity) for a probe card assembly in an integrated circuit test environment |
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