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TW202016662A - Detergent composition for resin mask removal - Google Patents

Detergent composition for resin mask removal Download PDF

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Publication number
TW202016662A
TW202016662A TW108125973A TW108125973A TW202016662A TW 202016662 A TW202016662 A TW 202016662A TW 108125973 A TW108125973 A TW 108125973A TW 108125973 A TW108125973 A TW 108125973A TW 202016662 A TW202016662 A TW 202016662A
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Taiwan
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component
mass
detergent composition
resin mask
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TW108125973A
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Chinese (zh)
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TWI810335B (en
Inventor
山田晃平
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日商花王股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Paints Or Removers (AREA)

Abstract

One embodiment of the present invention provides a detergent composition for resin mask removal, having excellent resin mask removal properties. This disclosure pertains to, in one embodiment, a detergent composition for resin mask removal, containing an alkali agent (component A), an organic solvent (component B) and water (component C), and wherein the coordinates of the Hansen solubility parameter of component B are within the range of a sphere having a diameter of 5.45 MPa0.5 and centering on [delta]d=18.3, [delta]p=6.8 and [delta]h=3.7, and the content of component C during use falls within the range of 69.9% to 99.4% by mass, inclusive.

Description

樹脂遮罩剝離用洗淨劑組合物Detergent composition for peeling off resin mask

本發明係關於一種樹脂遮罩剝離用洗淨劑組合物、使用該洗淨劑組合物之洗淨方法及電子零件之製造方法。The present invention relates to a detergent composition for peeling off a resin mask, a cleaning method using the detergent composition, and a method of manufacturing an electronic component.

近年來,於個人電腦或各種電子裝置中,低耗電化、處理速度之高速化、小型化有所發展,搭載於該等之封裝基板等之配線逐年微細化。形成此種微細配線以及支柱或凸塊之連接端子至今主要使用金屬遮罩法,但由於通用性較低或難以應對配線等之微細化,而正在向其他新方法轉變。In recent years, in personal computers and various electronic devices, low power consumption, increased processing speed, and miniaturization have been developed, and wiring mounted on such packaging substrates has been miniaturized year by year. The connection terminals forming such fine wiring and pillars or bumps have mainly used the metal mask method, but due to low versatility or difficulty in coping with the miniaturization of wiring, etc., they are changing to other new methods.

作為新方法之一,已知代替金屬遮罩將乾膜光阻用作厚膜樹脂遮罩之方法。該樹脂遮罩最終會被剝離、去除,此時使用鹼性之剝離用洗淨劑。As one of the new methods, a method of using a dry film photoresist as a thick film resin mask instead of a metal mask is known. The resin mask will eventually be peeled off and removed. At this time, an alkaline peeling detergent is used.

作為此種剝離用洗淨劑,例如,專利文獻1中記載有一種低蝕刻性光阻洗淨劑,其特徵在於:含有四級銨氫氧化物、特定之烷基二醇芳基醚或其衍生物、以及(C)苯乙酮或其衍生物。 專利文獻2中記載有一種光阻用剝離液,該光阻用剝離液本質上含有(A)脂肪族醇系溶劑35~80質量%、(B)選自鹵素系烴溶劑、非羥基化醚溶劑之有機溶劑10~40質量%、(C)四級銨鹽0.1~25質量%。 專利文獻3中記載有一種溶液,該溶液含有包含二甲基亞碸、四級銨氫氧化物、特定之烷醇胺、及醇、多羥基化合物或其組合之第2溶劑,且水之含量為3質量%以下。 專利文獻4中記載有一種準水系組合物,該準水系組合物用於微電子裝置之再加工,且含有至少1種鹼及/或鹼土金屬鹼、至少1種有機溶劑及水。 [先前技術文獻] [專利文獻]As such a cleaning agent for peeling, for example, Patent Document 1 describes a low-etching photoresist cleaning agent characterized by containing a quaternary ammonium hydroxide, a specific alkyl glycol aryl ether or Derivatives, and (C) acetophenone or its derivatives. Patent Document 2 describes a stripping liquid for photoresist, which essentially contains (A) an aliphatic alcohol-based solvent of 35 to 80% by mass, and (B) is selected from a halogen-based hydrocarbon solvent and a non-hydroxylated ether The organic solvent of the solvent is 10 to 40% by mass, and (C) the fourth-grade ammonium salt is 0.1 to 25% by mass. Patent Document 3 describes a solution containing a second solvent containing dimethyl sulfoxide, quaternary ammonium hydroxide, specific alkanolamine, alcohol, polyhydroxy compound, or a combination thereof, and the content of water 3% by mass or less. Patent Document 4 describes a quasi-aqueous composition for reprocessing microelectronic devices, and contains at least one alkali and/or alkaline earth metal base, at least one organic solvent, and water. [Prior Technical Literature] [Patent Literature]

專利文獻1:國際公開第2008/071078號 專利文獻2:美國專利第5185235號說明書 專利文獻3:美國專利申請公開第2014/0155310號說明書 專利文獻4:國際公開第2008/039730號Patent Literature 1: International Publication No. 2008/071078 Patent Document 2: Specification of US Patent No. 5185235 Patent Literature 3: US Patent Application Publication No. 2014/0155310 Specification Patent Document 4: International Publication No. 2008/039730

[發明所欲解決之問題][Problems to be solved by the invention]

於印刷基板等形成微細配線時,不用說樹脂遮罩之殘存,為了減少用於形成微細配線或凸塊之焊料或鍍覆液等中所包含之助劑等之殘存,對洗淨劑組合物要求較高之洗淨性。樹脂遮罩係使用由於光或電子束等對顯影液之溶解性等物性發生變化之抗蝕劑而形成者。 抗蝕劑根據與光或電子束反應之方法,大體分為負型與正型。負型抗蝕劑具有若被曝光則對顯影液之溶解性降低之特性,包含負型抗蝕劑之層(以下,亦稱為「負型抗蝕層」)於曝光及顯影處理後曝光部用作樹脂遮罩。正型抗蝕劑具有若被曝光則對顯影液之溶解性增大之特性,包含正型抗蝕劑之層(以下,亦稱為「正型抗蝕層」)於曝光及顯影處理後曝光部被去除,未曝光部用作樹脂遮罩。藉由使用具有此種特性之樹脂遮罩,可形成金屬配線、金屬柱或焊料凸塊之電路基板之微細連接部。When forming fine wiring on printed circuit boards and the like, it is needless to say that the resin mask remains. In order to reduce the residue of auxiliary agents and the like contained in solder or plating solution used to form fine wiring or bumps, the detergent composition Requires higher cleaning. The resin mask is formed by using a resist that changes physical properties such as the solubility of the developer in light or electron beams. The resist is roughly divided into a negative type and a positive type according to a method of reacting with light or electron beam. The negative resist has a characteristic that the solubility in the developing solution decreases when exposed, and the layer containing the negative resist (hereinafter, also referred to as "negative resist") is exposed to the exposed part after exposure and development Used as a resin mask. The positive resist has the property of increasing the solubility in the developing solution when exposed, and the layer containing the positive resist (hereinafter, also referred to as "positive resist") is exposed after exposure and development treatment The part is removed, and the unexposed part is used as a resin mask. By using a resin mask having such characteristics, it is possible to form fine connection portions of a circuit board of metal wiring, metal posts, or solder bumps.

但是,由於形成該等連接部時所使用之鍍覆處理或加熱處理等樹脂遮罩之特性發生變化,於下一步驟之洗淨步驟中,存在樹脂遮罩難以被去除之傾向。特別是,負型抗蝕劑具有藉由與光或電子束之反應而硬化之特性,故而使用負型抗蝕劑形成之樹脂遮罩由於形成連接部時所使用之鍍覆處理或加熱處理等硬化至超過必要之程度,無法以洗淨步驟完全去除,或者,去除所耗時間非常長,從而對基板或金屬表面造成損傷。如此,經鍍覆處理及/或加熱處理之樹脂遮罩難以去除,因此對洗淨劑組合物要求較高之樹脂遮罩去除性。However, due to changes in the characteristics of the resin mask such as plating treatment or heat treatment used when forming these connection portions, in the next cleaning step, the resin mask tends to be difficult to be removed. In particular, the negative resist has the characteristic of being hardened by reaction with light or electron beams, so the resin mask formed using the negative resist is subjected to plating treatment or heat treatment used when forming the connection portion It is hardened to a degree that is more than necessary, and cannot be completely removed in a washing step, or the removal takes a very long time, causing damage to the substrate or metal surface. In this way, the resin mask subjected to the plating treatment and/or the heat treatment is difficult to be removed, so the detergent composition requires high resin mask removal properties.

另一方面,為了電子裝置之小型化、處理速度之高速化、降低消耗電力,配線之微細化發展。若配線寬度變窄則存在電阻變大,發熱,導致電子裝置之功能降低之虞。為了不增大配線基板之面積而減小電阻,採取提高配線高度之對策。因此,用於形成配線之樹脂遮罩變厚而與配線之接觸面積增加,進而伴隨著微細化之配線間距亦變窄,從而樹脂遮罩變得難以去除。特別是,為了描繪微細配線而使用高能量之低波長光,但由於樹脂遮罩較厚,故而自樹脂遮罩表面至基板之距離變長,利用曝光所進行之光聚合之反應率於表面與基板接觸面產生差異,表面之反應過度進行,若不強化滲透性,則洗淨劑組合物不會自樹脂遮罩表面滲透,樹脂遮罩變得難以去除。On the other hand, in order to miniaturize electronic devices, increase the processing speed, and reduce power consumption, miniaturization of wiring has been developed. If the wiring width is narrowed, there is a possibility that the resistance will increase and heat will be generated, which may lower the function of the electronic device. In order to reduce the resistance without increasing the area of the wiring board, measures are taken to increase the wiring height. Therefore, the resin mask used to form the wiring becomes thicker and the contact area with the wiring increases, and the wiring pitch accompanying the miniaturization also becomes narrower, making it difficult to remove the resin mask. In particular, high-energy low-wavelength light is used for drawing fine wiring. However, since the resin mask is thick, the distance from the surface of the resin mask to the substrate becomes longer, and the reaction rate of photopolymerization by exposure on the surface and There is a difference in the contact surface of the substrate, and the reaction on the surface is excessive. If the permeability is not strengthened, the detergent composition will not penetrate from the surface of the resin mask, and the resin mask becomes difficult to remove.

因此,本發明提供一種樹脂遮罩去除性優異之樹脂遮罩剝離用洗淨劑組合物、使用該洗淨劑組合物之洗淨方法及基板之製造方法。 [解決問題之技術手段]Therefore, the present invention provides a detergent composition for peeling a resin mask excellent in resin mask removability, a cleaning method using the detergent composition, and a method of manufacturing a substrate. [Technical means to solve the problem]

本發明於一態樣中係關於一種樹脂遮罩剝離用洗淨劑組合物,該樹脂遮罩剝離用洗淨劑組合物含有鹼劑(成分A)、有機溶劑(成分B)及水(成分C),且成分B之漢森溶解度參數之座標在以δd=18.3、δp=6.8、δh=3.7為中心之半徑5.45 MPa0.5 之球之範圍內,使用時成分C之含量為69.9質量%以上99.4質量%以下。The present invention in one aspect relates to a detergent composition for peeling off a resin mask, the detergent composition for peeling off a resin mask contains an alkali agent (component A), an organic solvent (component B), and water (component C), and the coordinate of the Hansen solubility parameter of component B is within the range of a sphere with a radius of 5.45 MPa 0.5 centered on δd=18.3, δp=6.8, δh=3.7, and the content of component C is 69.9% by mass or more when used 99.4% by mass or less.

本發明於一態樣中係關於一種洗淨方法,其包括:用本發明之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。In one aspect, the present invention relates to a cleaning method, which includes the step of peeling the resin mask from the object to be cleaned to which the resin mask is attached using the detergent composition of the present invention.

本發明於一態樣中係關於一種電子零件之製造方法,其包括:用本發明之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。In one aspect, the present invention relates to a method for manufacturing an electronic component, which includes the step of peeling the resin mask from the object to be cleaned attached to the resin mask using the detergent composition of the present invention.

本發明於一態樣中係關於一種本發明之洗淨劑組合物作為電子零件之製造中之洗淨劑之使用。The present invention in one aspect relates to the use of a detergent composition of the present invention as a detergent in the manufacture of electronic parts.

本發明於一態樣中係關於一種套組,其係用於本發明之洗淨方法及本發明之電子零件之製造方法之任一者之套組,且於不相互混合之狀態下包含含有成分A之溶液(第1液)及含有成分B之溶液(第2液),第1液及第2液之至少一者進而含有成分C之一部分或全部,第1液及第2液於使用時被混合。 [發明之效果]The present invention in one aspect relates to a kit which is used in any of the cleaning method of the present invention and the manufacturing method of the electronic part of the present invention, and includes The solution of component A (the first liquid) and the solution containing component B (the second liquid), at least one of the first liquid and the second liquid further contains part or all of the component C, and the first liquid and the second liquid are used Time is mixed. [Effect of invention]

根據本發明,於一態樣中,可提供一種樹脂遮罩去除性優異之樹脂遮罩剝離用洗淨劑組合物。According to the present invention, in one aspect, it is possible to provide a detergent composition for peeling off a resin mask that is excellent in resin mask removal properties.

本發明於一態樣中係關於一種樹脂遮罩剝離用洗淨劑組合物(以下,亦稱為「本發明之洗淨劑組合物」),該樹脂遮罩剝離用洗淨劑組合物含有鹼劑(成分A)、有機溶劑(成分B)及水(成分C),且成分B之漢森溶解度參數之座標在以δd=18.3、δp=6.8、δh=3.7為中心之半徑5.45 MPa0.5 之球之範圍內,成分C之含量為69.9質量%以上99.4質量%以下。The present invention in one aspect relates to a detergent composition for peeling off a resin mask (hereinafter, also referred to as "the detergent composition of the present invention"), which contains a detergent composition for peeling off a resin mask. Alkali agent (component A), organic solvent (component B) and water (component C), and the coordinate of the Hansen solubility parameter of component B is a radius centered at δd=18.3, δp=6.8, δh=3.7 5.45 MPa 0.5 Within the range of the ball, the content of component C is 69.9% by mass or more and 99.4% by mass or less.

根據本發明,可提供一種樹脂遮罩去除性優異之洗淨劑組合物。由此,本發明之洗淨劑組合物可高效率地去除樹脂遮罩,特別是經鍍覆處理及/或加熱處理之樹脂遮罩。並且,藉由使用本發明之洗淨劑組合物,能夠以較高之產率獲得高品質之電子零件。進而,藉由使用本發明之洗淨劑組合物,可高效率地製造具有微細之配線圖案之電子零件。According to the present invention, it is possible to provide a detergent composition having excellent resin mask removal properties. Thus, the detergent composition of the present invention can efficiently remove a resin mask, especially a resin mask that has been plated and/or heat-treated. Furthermore, by using the detergent composition of the present invention, high-quality electronic parts can be obtained with a higher yield. Furthermore, by using the detergent composition of the present invention, electronic parts having fine wiring patterns can be efficiently produced.

本發明之洗淨劑組合物之效果之詳細作用機製有不明確之部分,但可進行如下推定。 一般而言,認為樹脂遮罩之剝離係由於洗淨劑組合物之成分滲透至樹脂遮罩而樹脂遮罩膨潤所導致之界面應力。認為本發明之洗淨劑組合物中,藉由使鹼劑(成分A)、特定之有機溶劑(成分B)與水(成分C)滲透至樹脂遮罩,而促進樹脂遮罩中所調配之鹼可溶性樹脂之解離,進而引起電荷排斥,藉此促進樹脂遮罩之剝離。推定:此時,特定之有機溶劑(成分B)作用於基板表面與樹脂遮罩之界面、配線與樹脂遮罩之界面,藉此基板-樹脂間之密接力降低而進一步促進樹脂遮罩之剝離,樹脂遮罩去除性明顯提高。又,亦推定:特定之有機溶劑(成分B)作用於樹脂遮罩中之未反應單體,以該處為起點使鹼劑(成分A)與水(成分C)滲透至樹脂遮罩中,促進樹脂遮罩之剝離,樹脂遮罩去除性明顯提高。從而,認為可高效率地且以較高之清潔度於基板上形成微細電路(配線圖案)。 但是,本發明可不限定於以該機製進行解釋。The detailed action mechanism of the effect of the detergent composition of the present invention is not clear, but it can be estimated as follows. Generally speaking, it is considered that the peeling of the resin mask is an interface stress caused by penetration of the components of the detergent composition into the resin mask and swelling of the resin mask. It is considered that in the detergent composition of the present invention, by permeating the alkali agent (component A), a specific organic solvent (component B) and water (component C) into the resin mask, the formulation in the resin mask is promoted The dissociation of the alkali-soluble resin causes charge repulsion, thereby promoting the peeling of the resin mask. Presumption: At this time, a specific organic solvent (component B) acts on the interface between the substrate surface and the resin mask, and the interface between the wiring and the resin mask, thereby reducing the adhesion between the substrate and the resin and further promoting the peeling of the resin mask The removability of the resin mask is significantly improved. It is also presumed that a specific organic solvent (component B) acts on the unreacted monomer in the resin mask, and from this point, the alkali agent (component A) and water (component C) penetrate into the resin mask, Promote the peeling of the resin mask, the removability of the resin mask is significantly improved. Therefore, it is considered that a fine circuit (wiring pattern) can be formed on the substrate with high efficiency and high cleanliness. However, the present invention is not limited to this mechanism.

近年來,對洗淨劑組合物要求較高之樹脂遮罩去除性,另一方面,期望對含有環氧樹脂或酚樹脂之有機樹脂之基板(以下,亦稱為「含有有機樹脂之基板」)之影響較少。此係由於洗淨劑組合物溶解於基板表面,並使其變質,則降低作為電子零件所要求之基板之性能,無法獲得高品質之基板。 與此相對,於本發明之洗淨劑組合物中,特定之有機溶劑(成分B)與水之相容性最佳,即便於存在大量水之情形或成分B之添加量較少之情形時亦有效地發揮作用,可促進鹼劑(成分A)及水(成分C)向樹脂遮罩之滲透。並且,藉由降低本發明之洗淨劑組合物中之有機物含量,可減少對含有有機樹脂之基板之影響。In recent years, a high degree of resin mask removability is required for detergent compositions. On the other hand, it is desired to use an organic resin substrate containing epoxy resin or phenol resin (hereinafter, also referred to as "organic resin-containing substrate") ) Has less impact. This is because the detergent composition dissolves on the surface of the substrate and deteriorates it, which reduces the performance of the substrate required as an electronic component, and a high-quality substrate cannot be obtained. In contrast, in the detergent composition of the present invention, the specific organic solvent (component B) has the best compatibility with water, even when there is a large amount of water or when the amount of component B is small It also effectively works to promote the penetration of the alkali agent (component A) and water (component C) into the resin mask. Furthermore, by reducing the content of organic matter in the detergent composition of the present invention, the influence on the substrate containing organic resin can be reduced.

又,於各種領域中,存在電子化發展而印刷基板等之生產量增加,洗淨劑組合物之使用量亦增加之傾向。並且,隨著洗淨劑組合物之使用量之增加,由洗淨劑組合物或洗液等之廢液之排水處理負荷或廢液流入所導致之湖沼之富營養化亦增大。因此,強烈要求一種排水處理負荷較小、不含導致湖沼之富營養化之氮及磷、可高效率地去除樹脂遮罩之洗淨劑組合物。 進而,為了高效率地重複使用洗淨液,強烈要求一種易於將所去除之樹脂遮罩自洗淨液中用網等排除、利用剝離所得之水系洗淨劑組合物有利、有機物含量較少之洗淨劑組合物。但是,於上述專利文獻所記載之方法中,難以兼具較高之樹脂遮罩去除性與較低之排水處理負荷。 與此相對,於本發明之洗淨劑組合物中,如上所述,特定之有機溶劑(成分B)與水之相容性最佳,即便於存在大量水之情形或成分B之添加量較少之情形時亦有效地發揮作用,可促進鹼劑(成分A)及水(成分C)向樹脂遮罩之滲透。並且,藉由降低本發明之洗淨劑組合物中之有機物含量,可抑制排水處理負荷之增大。In addition, in various fields, there has been a tendency for the development of electronics to increase the production of printed boards and the like, and the amount of detergent compositions used also increases. Moreover, as the amount of detergent composition used increases, the eutrophication of lakes and marshes caused by the drainage treatment load of the detergent composition or the waste liquid such as lotion or the inflow of waste liquid also increases. Therefore, there is a strong demand for a detergent composition that has a low drainage treatment load, does not contain nitrogen and phosphorus that cause eutrophication of lakes and marshes, and can efficiently remove the resin mask. Furthermore, in order to reuse the cleaning solution efficiently, a water-based detergent composition that is easy to remove the removed resin mask from the cleaning solution by using a net or the like, and that is obtained by stripping is advantageous, and has a low organic content Detergent composition. However, in the method described in the above patent document, it is difficult to have both high resin mask removal properties and low drainage treatment load. In contrast, in the detergent composition of the present invention, as described above, the compatibility of the specific organic solvent (component B) with water is the best, even when there is a large amount of water or the amount of component B added is relatively high When there are few cases, it also works effectively, and can promote the penetration of the alkali agent (component A) and water (component C) into the resin mask. In addition, by reducing the content of organic matter in the detergent composition of the present invention, an increase in drainage treatment load can be suppressed.

於本發明中,所謂樹脂遮罩係用於自蝕刻、鍍覆、加熱等處理中保護物質表面之遮罩,即作為保護膜而發揮功能之遮罩。作為樹脂遮罩,於一個或複數個實施形態中,可列舉曝光及顯影步驟後之抗蝕層、經曝光及顯影之至少一種處理(以下,亦稱為「經曝光及/或顯影處理」)之抗蝕層、或經硬化之抗蝕層。作為形成樹脂遮罩之樹脂材料,於一個或複數個實施形態中,可列舉膜狀之感光性樹脂或抗蝕膜。抗蝕膜可使用通用者。In the present invention, the so-called resin mask is a mask used to protect the surface of a substance during self-etching, plating, heating, etc., that is, a mask that functions as a protective film. As the resin mask, in one or more embodiments, at least one treatment of the resist layer after the exposure and development steps, exposure and development (hereinafter, also referred to as "exposure and/or development treatment") may be mentioned Resist layer, or hardened resist layer. As the resin material forming the resin mask, in one or more embodiments, a film-shaped photosensitive resin or a resist film may be mentioned. The resist film can be a general one.

[成分A:鹼劑] 本發明之洗淨劑組合物於一個或複數個實施形態中,包含鹼劑(成分A)。成分A可使用1種或併用2種以上。[Component A: alkali agent] In one or more embodiments, the detergent composition of the present invention contains an alkaline agent (component A). Component A can use 1 type or 2 or more types together.

作為成分A,例如可列舉選自無機鹼及有機鹼之至少1種,就降低排水處理負荷之觀點而言,較佳為無機鹼。As the component A, for example, at least one kind selected from inorganic bases and organic bases may be mentioned, and from the viewpoint of reducing the drainage treatment load, inorganic bases are preferred.

作為無機鹼,可列舉:氫氧化鈉、氫氧化鉀、氫氧化鋰、氫氧化鈣、碳酸鈉、碳酸鉀、矽酸鈉及矽酸鉀等。該等之中,就提高樹脂遮罩去除性之觀點而言,較佳為選自氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀之1種或2種以上之組合,更佳為氫氧化鈉及氫氧化鉀之至少一者,進而較佳為氫氧化鉀。Examples of the inorganic base include sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate and potassium silicate. Among these, from the viewpoint of improving the removability of the resin mask, one or a combination of two or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate, and potassium carbonate is preferred, and more preferred is hydroxide At least one of sodium and potassium hydroxide is further preferably potassium hydroxide.

作為有機鹼,可列舉:下述式(I)所表示之四級銨氫氧化物、下述式(II)所表示之胺等。Examples of the organic base include quaternary ammonium hydroxide represented by the following formula (I), amine represented by the following formula (II), and the like.

[化1]

Figure 02_image001
[Chemical 1]
Figure 02_image001

於上述式(I)中,R1 、R2 、R3 及R4 分別獨立,為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種。In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently, and are at least one selected from methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl.

[化2]

Figure 02_image003
[Chem 2]
Figure 02_image003

於上述式(II)中,R5 表示氫原子、甲基、乙基或胺基乙基,R6 為選自氫原子、羥乙基、羥丙基、甲基或乙基之至少1種,且R7 為選自胺基乙基、羥乙基或羥丙基之至少1種,或者,於式(II)中,R5 為選自甲基、乙基、胺基乙基、羥乙基或羥丙基之至少1種,且R6 與R7 相互鍵結而與式(II)中之N原子一同形成吡咯啶環或哌𠯤環。In the above formula (II), R 5 represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, and R 6 is at least one selected from a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group And R 7 is at least one selected from aminoethyl, hydroxyethyl or hydroxypropyl, or, in formula (II), R 5 is selected from methyl, ethyl, aminoethyl, hydroxy At least one of ethyl or hydroxypropyl, and R 6 and R 7 are mutually bonded to form a pyrrolidine ring or a piper ring together with the N atom in formula (II).

作為式(I)所表示之四級銨氫氧化物,例如可列舉含有四級銨陽離子與氫氧化物之鹽等。作為四級銨氫氧化物之具體例,可列舉:選自氫氧化四甲基銨(TMAH)、氫氧化四乙基銨、氫氧化四丙基銨、2-羥乙基三甲基氫氧化銨(膽鹼)、2-羥乙基三乙基氫氧化銨、2-羥乙基三丙基氫氧化銨、2-羥丙基三甲基氫氧化銨、2-羥丙基三乙基氫氧化銨、2-羥丙基三丙基氫氧化銨、二甲基雙(2-羥乙基)氫氧化銨、二乙基雙(2-羥乙基)氫氧化銨、二丙基雙(2-羥乙基)氫氧化銨、三(2-羥乙基)甲基氫氧化銨、三(2-羥乙基)乙基氫氧化銨、三(2-羥乙基)丙基氫氧化銨、四(2-羥乙基)氫氧化銨及四(2-羥丙基)氫氧化銨之至少1種。該等之中,就提高樹脂遮罩去除性之觀點而言,較佳為選自四甲基氫氧化銨(TMAH)、2-羥乙基三甲基氫氧化銨(膽鹼)、二甲基雙(2-羥乙基)氫氧化銨及二乙基雙(2-羥乙基)氫氧化銨之至少1種,更佳為選自四甲基氫氧化銨(TMAH)、2-羥乙基三甲基氫氧化銨(膽鹼)及二甲基雙(2-羥乙基)氫氧化銨之至少1種,進而較佳為四甲基氫氧化銨(TMAH)。Examples of the quaternary ammonium hydroxide represented by formula (I) include salts containing quaternary ammonium cations and hydroxides. Specific examples of the quaternary ammonium hydroxide include: selected from tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethyl hydroxide Ammonium (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide Ammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, diethylbis(2-hydroxyethyl)ammonium hydroxide, dipropylbis (2-Hydroxyethyl)ammonium hydroxide, tri(2-hydroxyethyl)methylammonium hydroxide, tri(2-hydroxyethyl)ethylammonium hydroxide, tri(2-hydroxyethyl)propylhydrogen At least one of ammonium oxide, tetra(2-hydroxyethyl)ammonium hydroxide and tetra(2-hydroxypropyl)ammonium hydroxide. Among these, from the viewpoint of improving the removability of the resin mask, it is preferably selected from tetramethylammonium hydroxide (TMAH), 2-hydroxyethyltrimethylammonium hydroxide (choline), dimethyl At least one of bis(2-hydroxyethyl)ammonium hydroxide and diethylbis(2-hydroxyethyl)ammonium hydroxide, more preferably selected from tetramethylammonium hydroxide (TMAH), 2-hydroxyl At least one of ethyltrimethylammonium hydroxide (choline) and dimethylbis(2-hydroxyethyl)ammonium hydroxide is more preferred, and tetramethylammonium hydroxide (TMAH) is more preferred.

作為式(II)所表示之胺,例如可列舉烷醇胺、1~3級胺及雜環化合物等。作為胺之具體例,可列舉:選自單乙醇胺、單異丙醇胺、N-甲基單乙醇胺、N-甲基異丙醇胺、N-乙基單乙醇胺、N-乙基異丙醇胺、二乙醇胺、二異丙醇胺、N-二甲基單乙醇胺、N-二甲基單異丙醇胺、N-甲基二乙醇胺、N-甲基二異丙醇胺、N-二乙基單乙醇胺、N-二乙基單異丙醇胺、N-乙基二乙醇胺、N-乙基二異丙醇胺、N-(β-胺基乙基)乙醇胺、N-(β-胺基乙基)異丙醇胺、N-(β-胺基乙基)二乙醇胺、N-(β-胺基乙基)二異丙醇胺、1-甲基哌𠯤、1-(2-羥乙基)吡咯啶、1-(2-羥乙基)哌𠯤、乙二胺及二伸乙基三胺之至少1種。該等之中,就提高樹脂遮罩去除性之觀點而言,較佳為選自單乙醇胺、單異丙醇胺、二乙醇胺、N-甲基單乙醇胺、N-乙基單乙醇胺、N-(β-胺基乙基)乙醇胺、1-(2-羥乙基)哌𠯤及二伸乙基三胺之至少1種,更佳為選自單乙醇胺、單異丙醇胺、二乙醇胺、N-甲基單乙醇胺及N-乙基單乙醇胺之至少1種,進而較佳為單乙醇胺。Examples of the amine represented by the formula (II) include alkanolamines, 1-3 order amines, and heterocyclic compounds. Specific examples of amines include: selected from monoethanolamine, monoisopropanolamine, N-methyl monoethanolamine, N-methylisopropanolamine, N-ethyl monoethanolamine, N-ethylisopropanol Amine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethanol Ethyl monoethanolamine, N-diethyl monoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β- Aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, N-(β-aminoethyl)diisopropanolamine, 1-methylpiperamine, 1-(2 -At least one of hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)piperidine, ethylenediamine and diethylenediamine. Among these, from the viewpoint of improving the removability of the resin mask, it is preferably selected from monoethanolamine, monoisopropanolamine, diethanolamine, N-methyl monoethanolamine, N-ethyl monoethanolamine, N- At least one of (β-aminoethyl)ethanolamine, 1-(2-hydroxyethyl)piperamine and diethylenetriamine, more preferably selected from monoethanolamine, monoisopropanolamine, diethanolamine, At least one of N-methyl monoethanolamine and N-ethyl monoethanolamine is more preferably monoethanolamine.

就提高樹脂遮罩去除性之觀點而言,本發明之洗淨劑組合物使用時成分A之含量較佳為0.1質量%以上,更佳為0.5質量%以上,進而較佳為1.0質量%以上,進而更佳為1.5質量%以上,並且就提高樹脂遮罩去除性之觀點而言,較佳為15質量%以下,更佳為10質量%以下,進而較佳為7.5質量%以下,進而更佳為5質量%以下。更具體而言,使用時成分A之含量較佳為0.1質量%以上15質量%以下,更佳為0.5質量%以上10質量%以下,進而較佳為1.0質量%以上7.5質量%以下,進而更佳為1.5質量%以上5質量%以下。於成分A含有2種以上鹼劑之情形時,成分A之含量係指該等之合計含量。From the viewpoint of improving the removability of the resin mask, the content of component A when the detergent composition of the present invention is used is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and still more preferably 1.0% by mass or more It is more preferably 1.5% by mass or more, and from the viewpoint of improving the removability of the resin mask, it is preferably 15% by mass or less, more preferably 10% by mass or less, still more preferably 7.5% by mass or less, and still more Preferably it is 5 mass% or less. More specifically, when used, the content of component A is preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.5% by mass or more and 10% by mass or less, further preferably 1.0% by mass or more and 7.5% by mass or less, and still more It is preferably 1.5% by mass or more and 5% by mass or less. In the case where component A contains two or more alkaline agents, the content of component A refers to the total content of these.

於本發明中,所謂「洗淨劑組合物使用時各成分之含量」係指洗淨時即開始使用洗淨劑組合物進行洗淨之時間點之各成分之含量。In the present invention, the "content of each component when the detergent composition is used" refers to the content of each component at the time when the detergent composition is used for cleaning immediately after cleaning.

[成分B:有機溶劑] 本發明之洗淨劑組合物於一個或複數個實施形態中,包含有機溶劑(成分B)。成分B可使用1種或併用2種以上。[Component B: Organic solvent] In one or more embodiments, the detergent composition of the present invention contains an organic solvent (component B). Component B can be used alone or in combination of two or more.

於本發明中,成分B之漢森溶解度參數之座標在以δd=18.3、δp=6.8、δh=3.7為中心之半徑5.45 MPa0.5 之球之範圍內。於本發明之洗淨劑組合物包含2種以上有機溶劑(以下,亦稱為「混合有機溶劑」)之情形時,混合有機溶劑整體之漢森溶解度參數可不在上述範圍內,若混合有機溶劑中包含至少1種具有上述範圍內之漢森溶解度參數之有機溶劑,則可發揮本發明之效果。In the present invention, the coordinates of the Hansen solubility parameter of component B are within the range of a sphere with a radius of 5.45 MPa 0.5 centered at δd=18.3, δp=6.8, and δh=3.7. When the detergent composition of the present invention contains two or more organic solvents (hereinafter, also referred to as "mixed organic solvents"), the Hansen solubility parameter of the entire mixed organic solvent may not be within the above range. Including at least one organic solvent having a Hansen solubility parameter within the above range, the effect of the present invention can be exerted.

此處,所謂漢森溶解度參數(Hansen solubility parameter)(以下,亦稱為「HSP」)係Charles M. Hansen於1967年發表之用於預測物質之溶解性之值,即基於「分子間之相互作用相似之2個物質容易相互溶解」之想法之參數。HSP包含以下之3個參數(單位:MPa0.5 )。 δd:利用分子間之分散力所得之能量 δp:利用分子間之偶極相互作用所得之能量 δh:利用分子間之氫鍵所得之能量 該等3個參數可視為三維空間(漢森空間)之座標,表示將2個物質之HSP置於漢森空間內時,2點間之距離越近則越容易相互溶解。化學工業2010年3月號(化學工業公司)等有詳細說明,藉由使用個人電腦用軟體「HSPiP:Hansen Solubility Parameters in Practice」等可獲得各種物質之漢森溶解度參數。本發明使用漢森溶解度參數,該漢森溶解度參數係使用該個人電腦用軟體「HSPiP:Hansen Solubility Parameters in Practice」而獲得。於成分B為2種以上之混合有機溶劑之情形時,對於作為混合有機溶劑之HSP之距離,可使用「HSPiP:Hansen Solubility Parameters in Practice」之混合有機溶劑之HSP算出功能算出。Here, the so-called Hansen solubility parameter (hereinafter, also referred to as "HSP") is the value used by Charles M. Hansen to predict the solubility of substances published in 1967, which is based on "the mutual interaction between molecules "Two substances with similar effects are easy to dissolve each other". HSP contains the following 3 parameters (unit: MPa 0.5 ). δd: the energy obtained by the dispersing force between the molecules δp: the energy obtained by the dipole interaction between the molecules δh: the energy obtained by the hydrogen bonding between the molecules These three parameters can be regarded as the three-dimensional space (Hansen space) Coordinates indicate that when HSPs of two substances are placed in Hansen space, the closer the distance between the two points is, the easier it is to dissolve each other. The chemical industry March 2010 issue (Chemical Industry Corporation), etc. has detailed descriptions, and can obtain the Hansen solubility parameters of various substances by using personal computer software "HSPiP: Hansen Solubility Parameters in Practice". The present invention uses the Hansen solubility parameter obtained by using the personal computer software "HSPiP: Hansen Solubility Parameters in Practice". When the component B is two or more mixed organic solvents, the distance of the HSP as the mixed organic solvent can be calculated using the HSP calculation function of the mixed organic solvent of "HSPiP: Hansen Solubility Parameters in Practice".

本發明中之成分B之HSP之座標亦可表現為如下所述。即,將成分B之HSP之座標設為(δdB 、δpB 、δhB )時,該成分B之HSP之座標(δdB 、δpB 、δhB )與成分座標X(δd=18.3、δp=6.8、δh=3.7)之距離(單位:MPa0.5 )可設為滿足下式者。 距離=[(δdB -18.3)2 +(δpB -6.8)2 +(δhB -3.7)2 ]0.5 ≦5.45 MPa0.5 The coordinates of the HSP of component B in the present invention can also be expressed as follows. That is, when the coordinate of the HSP of the component B is (δd B , δp B , δh B ), the coordinate of the HSP of the component B (δd B , δp B , δh B ) and the component coordinate X (δd=18.3, δp =6.8, δh=3.7) The distance (unit: MPa 0.5 ) can be set to satisfy the following formula. Distance = [(δd B- 18.3) 2 + (δp B- 6.8) 2 + (δh B- 3.7) 2 ] 0.5 ≤ 5.45 MPa 0.5

作為成分B,只要為成分B之HSP之座標與成分座標X之距離滿足上式之有機溶劑即可,並無特別限定,例如可列舉:選自苯乙酮(距離:2.44 MPa0.5 )、苯丙酮(距離:0.65 MPa0.5 )、大茴香醛(距離:5.15 MPa0.5 )、鄰甲氧基苯甲醛(距離:2.43 MPa0.5 )、對甲基苯乙酮(距離:1.23 MPa0.5 )、四氫呋喃(距離:5.36 MPa0.5 )、二甲氧基四氫呋喃(距離:5.42 MPa0.5 )、甲氧基環戊烷(距離:4.10 MPa0.5 )、二苯醚(距離:3.83 MPa0.5 )、苯甲醚(距離:4.12 MPa0.5 )、苯乙醚(距離:2.33 MPa0.5 )、二乙二醇二乙醚(距離:5.42 MPa0.5 )、二丙二醇二甲醚(距離:5.44 MPa0.5 )、環己酮(距離:2.35 MPa0.5 )、2-辛酮(距離:4.73 MPa0.5 )及苯甲醛(距離:2.79 MPa0.5 )之1種或2種以上之組合。就提高樹脂遮罩去除性之觀點而言,較佳為選自苯乙酮、苯丙酮、大茴香醛、鄰甲氧基苯甲醛、對甲基苯乙酮、四氫呋喃、二甲氧基四氫呋喃、甲氧基環戊烷、二苯醚、苯甲醚、苯乙醚、二乙二醇二乙醚、二丙二醇二甲醚、環己酮、2-辛酮及苯甲醛之1種或2種以上之組合,更佳為選自苯乙酮、苯丙酮、大茴香醛、鄰甲氧基苯甲醛、對甲基苯乙酮、四氫呋喃、二甲氧基四氫呋喃、甲氧基環戊烷、苯甲醚、苯乙醚、二乙二醇二乙醚、環己酮及苯甲醛之1種或2種以上之組合,進而較佳為選自苯乙酮、苯丙酮、大茴香醛、對甲基苯乙酮、四氫呋喃、二甲氧基四氫呋喃、甲氧基環戊烷、苯甲醚、苯乙醚、環己酮及苯甲醛之1種或2種以上之組合,進而更佳為選自苯乙酮、大茴香醛、對甲基苯乙酮、苯乙醚、環己酮及苯甲醛之1種或2種以上之組合。括弧內之數值表示成分B之HSP之座標與成分座標X之距離(單位:MPa0.5 )。As the component B, as long as the distance between the coordinate of the HSP of the component B and the coordinate X of the component satisfies the above formula, there is no particular limitation, and examples include: selected from acetophenone (distance: 2.44 MPa 0.5 ), benzene Acetone (distance: 0.65 MPa 0.5 ), anisaldehyde (distance: 5.15 MPa 0.5 ), o-methoxybenzaldehyde (distance: 2.43 MPa 0.5 ), p-methylacetophenone (distance: 1.23 MPa 0.5 ), tetrahydrofuran ( Distance: 5.36 MPa 0.5 ), dimethoxytetrahydrofuran (distance: 5.42 MPa 0.5 ), methoxycyclopentane (distance: 4.10 MPa 0.5 ), diphenyl ether (distance: 3.83 MPa 0.5 ), anisole (distance : 4.12 MPa 0.5 ), diethyl ether (distance: 2.33 MPa 0.5 ), diethylene glycol diethyl ether (distance: 5.42 MPa 0.5 ), dipropylene glycol dimethyl ether (distance: 5.44 MPa 0.5 ), cyclohexanone (distance: 2.35 MPa 0.5 ), 2-octanone (distance: 4.73 MPa 0.5 ) and benzaldehyde (distance: 2.79 MPa 0.5 ) one or a combination of two or more. From the viewpoint of improving the removability of the resin mask, it is preferably selected from acetophenone, phenylacetone, anisaldehyde, o-methoxybenzaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, One or more of methoxycyclopentane, diphenyl ether, anisole, phenethyl ether, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde Combination, more preferably selected from acetophenone, phenylacetone, anisaldehyde, o-methoxybenzaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole , Phenethyl ether, diethylene glycol diethyl ether, cyclohexanone and benzaldehyde, one or a combination of two or more, further preferably selected from acetophenone, phenylacetone, anisaldehyde, p-methylacetophenone , Tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenethyl ether, cyclohexanone and benzaldehyde, one or a combination of two or more, and more preferably selected from acetophenone, large One or a combination of two or more of anisaldehyde, p-methylacetophenone, phenethyl ether, cyclohexanone and benzaldehyde. The value in parentheses indicates the distance between the coordinate of component B's HSP and component coordinate X (unit: MPa 0.5 ).

就由引火所導致之火災風險之降低及持久性之觀點而言,本發明中之成分B較佳為沸點較高。例如,成分B之沸點較佳為160℃以上,更佳為200℃以上。From the viewpoint of reduction in fire risk and durability caused by ignition, Component B in the present invention preferably has a higher boiling point. For example, the boiling point of component B is preferably 160°C or higher, and more preferably 200°C or higher.

於本發明中,就濃縮性之觀點而言,成分B較佳為對水之溶解度較高,例如,成分B對100 mL水之溶解度較佳為0.3 g以上。In the present invention, from the viewpoint of concentration, Component B preferably has high solubility in water, for example, Component B preferably has a solubility of 0.3 g or more in 100 mL of water.

就提高樹脂遮罩去除性之觀點而言,本發明之洗淨劑組合物使用時成分B之含量較佳為0.5質量%以上,更佳為1質量%以上,進而較佳為3質量%以上,進而更佳為5質量%以上,並且就降低排水處理負荷及降低對含有有機樹脂之基板之影響之觀點而言,較佳為30質量%以下,更佳為25質量%以下,進而較佳為20質量%以下,進而更佳為15質量%以下。更具體而言,使用時成分B之含量較佳為0.5質量%以上30質量%以下,更佳為1質量%以上25質量%以下,進而較佳為3質量%以上20質量%以下,進而更佳為5質量%以上15質量%以下。於成分B為2種以上之組合之情形時,成分B之含量係指該等之合計含量。From the viewpoint of improving the removability of the resin mask, the content of component B when the detergent composition of the present invention is used is preferably 0.5% by mass or more, more preferably 1% by mass or more, and still more preferably 3% by mass or more It is more preferably 5% by mass or more, and from the viewpoint of reducing the drainage treatment load and reducing the influence on the substrate containing organic resin, it is preferably 30% by mass or less, more preferably 25% by mass or less, and still more preferably It is 20% by mass or less, and more preferably 15% by mass or less. More specifically, when used, the content of component B is preferably 0.5% by mass or more and 30% by mass or less, more preferably 1% by mass or more and 25% by mass or less, and still more preferably 3% by mass or more and 20% by mass or less, and still more It is preferably 5% by mass or more and 15% by mass or less. In the case where component B is a combination of two or more, the content of component B refers to the total content of these.

就保存穩定性及降低排水處理負荷之觀點而言,本發明之洗淨劑組合物中之成分A與成分B之質量比(A/B)較佳為0.05以上,更佳為0.08以上,進而較佳為0.1以上,進而更佳為0.15以上,並且就提高樹脂遮罩去除性之觀點而言,較佳為2以下,更佳為1以下,進而較佳為0.8以下,進而更佳為0.5以下。更具體而言,質量比(A/B)較佳為0.05以上2以下,更佳為0.08以上1以下,進而較佳為0.1以上0.8以下,進而更佳為0.15以上0.5以下。From the viewpoints of storage stability and reduction of drainage treatment load, the mass ratio (A/B) of component A and component B in the detergent composition of the present invention is preferably 0.05 or more, more preferably 0.08 or more, and It is preferably 0.1 or more, and more preferably 0.15 or more, and from the viewpoint of improving the removability of the resin mask, it is preferably 2 or less, more preferably 1 or less, still more preferably 0.8 or less, and still more preferably 0.5 the following. More specifically, the mass ratio (A/B) is preferably 0.05 or more and 2 or less, more preferably 0.08 or more and 1 or less, still more preferably 0.1 or more and 0.8 or less, and still more preferably 0.15 or more and 0.5 or less.

[成分C:水] 本發明之洗淨劑組合物包含水(成分C)。作為成分C之水,可列舉離子交換水、逆滲透水、蒸餾水、純水、超純水等。[Component C: Water] The detergent composition of the present invention contains water (component C). Examples of the water of component C include ion exchanged water, reverse osmosis water, distilled water, pure water, and ultrapure water.

本發明之洗淨劑組合物中之成分C之含量可設為除成分A、成分B及後述之任意成分以外之殘餘。具體而言,就提高樹脂遮罩去除性、降低排水處理負荷及降低對含有有機樹脂之基板之影響之觀點而言,本發明之洗淨劑組合物使用時成分C之含量為69.9質量%以上,較佳為70質量%以上,更佳為75質量%以上,進而較佳為80質量%以上,並且就提高樹脂遮罩去除性之觀點而言,為99.4質量%以下,較佳為95質量%以下,更佳為90質量%以下,進而較佳為85質量%以下。更具體而言,使用時成分C之含量為69.9質量%以上99.4質量%以下,較佳為70質量%以上95質量%以下,更佳為75質量%以上90質量%以下,進而較佳為80質量%以上85質量%以下。The content of the component C in the detergent composition of the present invention can be set as a residue other than the component A, the component B, and any components described below. Specifically, the content of component C when the detergent composition of the present invention is used is 69.9% by mass or more from the viewpoints of improving the removability of the resin mask, reducing the drainage treatment load, and reducing the influence on the substrate containing organic resin , Preferably 70% by mass or more, more preferably 75% by mass or more, and further preferably 80% by mass or more, and from the viewpoint of improving the removability of the resin mask, 99.4% by mass or less, preferably 95% by mass % Or less, more preferably 90% by mass or less, and further preferably 85% by mass or less. More specifically, when used, the content of component C is 69.9% by mass or more and 99.4% by mass or less, preferably 70% by mass or more and 95% by mass or less, more preferably 75% by mass or more and 90% by mass or less, and further preferably 80 More than 85% by mass.

[任意成分] 本發明之洗淨劑組合物除上述成分A~C以外,視需要可進一步含有任意成分。作為任意成分,可列舉可用於通常之洗淨劑之成分,例如可列舉:除成分B以外之有機溶劑、界面活性劑、螯合劑、增黏劑、分散劑、防銹劑、高分子化合物、助溶劑、抗氧化劑、防腐劑、消泡劑、抗菌劑等。本發明之洗淨劑組合物使用時任意成分之含量較佳為0質量%以上2.0質量%以下,更佳為0質量%以上1.5質量%以下,進而較佳為0質量%以上1.3質量%以下,進而更佳為0質量%以上1.0質量%以下。[Optional] The detergent composition of the present invention may further contain arbitrary components in addition to the above components A to C as necessary. Examples of the optional components include components that can be used in ordinary detergents, and examples include organic solvents other than component B, surfactants, chelating agents, tackifiers, dispersants, rust inhibitors, polymer compounds, Solvents, antioxidants, preservatives, defoamers, antibacterial agents, etc. When the detergent composition of the present invention is used, the content of any component is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and still more preferably 0% by mass or more and 1.3% by mass or less It is more preferably 0% by mass or more and 1.0% by mass or less.

就降低排水處理負荷及降低對含有有機樹脂之基板之影響之觀點而言,本發明之洗淨劑組合物使用時成分A、成分B及來源於任意成分之有機物之總含量較佳為40質量%以下,更佳為35質量%以下,進而較佳為30質量%以下,進而更佳為25質量%以下,進而更佳為20質量%以下,並且就提高樹脂遮罩去除性之觀點而言,較佳為0.5質量%以上,更佳為1質量%以上,進而較佳為3質量%以上,進而更佳為5質量%以上。更具體而言,本發明之洗淨劑組合物使用時成分A、成分B及來源於任意成分之有機物之總含量較佳為0.5質量%以上40質量%以下,更佳為1質量%以上35質量%以下,進而較佳為3質量%以上30質量%以下,進而更佳為5質量%以上25質量%以下,進而更佳為5質量%以上20質量%以下。From the viewpoints of reducing the drainage treatment load and reducing the influence on the substrate containing the organic resin, the total content of component A, component B and organic matter derived from any component when the detergent composition of the present invention is used is preferably 40 mass % Or less, more preferably 35% by mass or less, further preferably 30% by mass or less, still more preferably 25% by mass or less, still more preferably 20% by mass or less, and from the viewpoint of improving the removability of the resin mask It is preferably 0.5% by mass or more, more preferably 1% by mass or more, still more preferably 3% by mass or more, and still more preferably 5% by mass or more. More specifically, when the detergent composition of the present invention is used, the total content of component A, component B, and organic matter derived from any component is preferably 0.5% by mass or more and 40% by mass or less, more preferably 1% by mass or more 35 The mass% or less, more preferably 3 mass% or more and 30 mass% or less, still more preferably 5 mass% or more and 25 mass% or less, still more preferably 5 mass% or more and 20 mass% or less.

就降低排水處理負荷、抑制排水水域之富營養化之觀點而言,本發明之洗淨劑組合物較佳為實質上不含含氮化合物及含磷化合物。於本發明中,所謂「實質上不含含氮化合物及含磷化合物」係指本發明之洗淨劑組合物中之含氮化合物及含磷化合物之合計含量未達0.1質量%。就降低排水處理負荷、抑制排水水域之富營養化之觀點而言,本發明之洗淨劑組合物中之含氮化合物及含磷化合物之合計含量較佳為0.05質量%以下,更佳為0.01質量%以下,進而較佳為0質量%。 作為含氮化合物,可列舉先前廣泛用作洗淨劑組合物之含氮化合物,例如可列舉選自胺及其鹽、氨、以及銨鹽之至少1種或2種以上之組合。作為上述胺,例如可列舉單乙醇胺、二乙醇胺等胺基醇。作為上述銨鹽,例如可列舉四甲基氫氧化銨(TMAH)等四級銨鹽。 作為含磷化合物,可列舉先前廣泛用作洗淨劑組合物之含磷化合物,例如可列舉選自磷酸及其鹽、焦磷酸、多磷酸、偏磷酸等縮合磷酸及其鹽等無機磷酸、以及有機磷酸、磷酸酯之至少1種或2種以上之組合。From the viewpoints of reducing the drainage treatment load and suppressing the eutrophication of the drainage water area, the detergent composition of the present invention is preferably substantially free of nitrogen-containing compounds and phosphorus-containing compounds. In the present invention, "substantially free of nitrogen-containing compounds and phosphorus-containing compounds" means that the total content of nitrogen-containing compounds and phosphorus-containing compounds in the detergent composition of the present invention is less than 0.1% by mass. From the viewpoint of reducing the drainage treatment load and suppressing the eutrophication of the drainage water area, the total content of the nitrogen-containing compound and the phosphorus-containing compound in the detergent composition of the present invention is preferably 0.05% by mass or less, more preferably 0.01 The mass% or less is more preferably 0 mass %. Examples of the nitrogen-containing compound include nitrogen-containing compounds that have been widely used as detergent compositions, and examples thereof include at least one kind or a combination of two or more kinds selected from amines and their salts, ammonia, and ammonium salts. Examples of the amines include amino alcohols such as monoethanolamine and diethanolamine. Examples of the ammonium salt include quaternary ammonium salts such as tetramethylammonium hydroxide (TMAH). Examples of the phosphorus-containing compound include phosphorus-containing compounds that have been widely used as detergent compositions, and examples include inorganic phosphoric acid such as condensed phosphoric acid and its salts selected from phosphoric acid and its salts, pyrophosphoric acid, polyphosphoric acid, and metaphosphoric acid, and the like. A combination of at least one organic phosphoric acid and phosphate ester or two or more.

[洗淨劑組合物之製造方法] 本發明之洗淨劑組合物可藉由以公知方法調配上述成分A~C及視需要之上述任意成分而製造。例如,本發明之洗淨劑組合物可為至少調配上述成分A~C而成者。因此,本發明係關於一種洗淨劑組合物之製造方法,其包括至少調配上述成分A~C之步驟。於本發明中,所謂「進行調配」係包括同時或以任意順序混合成分A~C及視需要之其他成分。於本發明之洗淨劑組合物之製造方法中,各成分之較佳之調配量可設為與上述本發明之洗淨劑組合物之各成分之較佳之含量相同。[Manufacturing method of detergent composition] The detergent composition of the present invention can be produced by blending the above-mentioned components A to C and any of the above-mentioned optional components as required by a known method. For example, the detergent composition of the present invention may be prepared by blending at least the aforementioned components A to C. Therefore, the present invention relates to a method for manufacturing a detergent composition, which includes the step of blending at least the above components A to C. In the present invention, the so-called "preparation" includes mixing components A to C and other components as needed in a simultaneous or arbitrary order. In the manufacturing method of the detergent composition of the present invention, the preferable blending amount of each component can be set to be the same as the preferable content of each component of the detergent composition of the present invention described above.

本發明之洗淨劑組合物亦可製成發生分離或析出等而於不損及保管穩定性之範圍內減少成分C之水之量之濃縮物。就輸送及儲藏之觀點而言,洗淨劑組合物之濃縮物較佳為製成稀釋倍率為3倍以上之濃縮物,就保管穩定性之觀點而言,較佳為製成稀釋倍率為30倍以下之濃縮物。洗淨劑組合物之濃縮物能夠以使用時成分A~C成為上述含量(即洗淨時之含量)之方式用水進行稀釋而使用。進而,洗淨劑組合物之濃縮物亦可於使用時分別添加各成分而使用。於本發明中,所謂濃縮液之洗淨劑組合物之「使用時」或「洗淨時」係指洗淨劑組合物之濃縮物經稀釋之狀態。The detergent composition of the present invention can also be made into a concentrate in which the amount of water of component C is reduced within a range that does not impair the storage stability, such as separation or precipitation. From the viewpoint of transportation and storage, the concentrate of the detergent composition is preferably made into a concentrate having a dilution ratio of 3 times or more, and from the viewpoint of storage stability, it is preferably made into a dilution ratio of 30 Concentrate less than twice. The concentrate of the detergent composition can be used by diluting with water so that the components A to C become the above-mentioned contents (that is, the contents at the time of washing) during use. Furthermore, the concentrate of the detergent composition can be used by adding each component separately during use. In the present invention, the "at the time of use" or "at the time of washing" of the detergent composition of the concentrated liquid refers to a state where the concentrate of the detergent composition is diluted.

[洗淨對象物] 本發明之洗淨劑組合物於一個或複數個實施形態中,可用於洗淨樹脂遮罩所附著之洗淨對象物。 作為洗淨對象物,例如可列舉電子零件及其製造中間物。作為電子零件,例如可列舉選自印刷基板、晶圓、銅板及鋁板等金屬板之至少1個零件。上述製造中間物為電子零件之製造步驟中之中間製造物,且包含樹脂遮罩處理後之中間製造物。作為樹脂遮罩所附著之洗淨對象物之具體例,例如可列舉藉由經進行使用樹脂遮罩之焊接或鍍覆處理(鍍銅、鍍鋁、鍍鎳等)等處理之步驟,配線或連接端子等形成於基板表面之電子零件等。 因此,本發明於一態樣中係關於一種本發明之洗淨劑組合物作為電子零件之製造中之洗淨劑之用途。[Washing object] In one or a plurality of embodiments, the detergent composition of the present invention can be used to clean the object to be adhered by the resin mask. Examples of the object to be cleaned include electronic parts and intermediates for their production. Examples of electronic components include at least one component selected from metal plates such as printed circuit boards, wafers, copper plates, and aluminum plates. The aforementioned manufacturing intermediate is an intermediate manufactured in the manufacturing process of electronic parts, and includes the intermediate manufactured after the resin masking process. As a specific example of the object to be cleaned adhered to the resin mask, for example, a process such as soldering or plating using a resin mask (copper plating, aluminum plating, nickel plating, etc.), wiring or Electronic parts and the like formed on the surface of the substrate by connecting terminals and the like. Therefore, in one aspect, the present invention relates to the use of the detergent composition of the present invention as a detergent in the manufacture of electronic parts.

本發明之洗淨劑組合物於一個或複數個實施形態中,就洗淨效果之方面而言,可較佳地用於洗淨樹脂遮罩或進而經鍍覆處理及/或加熱處理之樹脂遮罩所附著之洗淨對象物。作為樹脂遮罩,例如可為負型樹脂遮罩,亦可為正型樹脂遮罩,就易於發揮本發明之效果之方面而言,較佳為負型樹脂遮罩。作為負型樹脂遮罩,例如可列舉經曝光及/或顯影處理之負型乾膜光阻。於本發明中,所謂負型樹脂遮罩係使用負型抗蝕劑而形成者,例如可列舉經曝光及/或顯影處理之負型抗蝕層。於本發明中,所謂正型樹脂遮罩係使用正型抗蝕劑而形成者,例如可列舉經曝光及/或顯影處理之正型抗蝕層。In one or more embodiments, the detergent composition of the present invention can be preferably used for cleaning resin masks or resins that have been plated and/or heat-treated The object to be cleaned attached to the mask. The resin mask may be, for example, a negative resin mask or a positive resin mask. In terms of easily exhibiting the effects of the present invention, a negative resin mask is preferred. Examples of the negative resin mask include negative dry film photoresist after exposure and/or development treatment. In the present invention, the negative resin mask is formed using a negative resist, and for example, a negative resist layer subjected to exposure and/or development treatment may be mentioned. In the present invention, the positive-type resin mask is formed using a positive-type resist, and for example, a positive-type resist layer that has been exposed and/or developed.

[洗淨方法] 本發明於一態樣中係關於一種洗淨方法(以下,亦稱為「本發明之洗淨方法」),其包括:用本發明之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。於本發明之洗淨方法中,自洗淨對象物剝離樹脂遮罩之步驟於一個或複數個實施形態中,包括使樹脂遮罩所附著之洗淨對象物接觸本發明之洗淨劑組合物。若為本發明之洗淨方法,則可高效率地去除樹脂遮罩,特別是經鍍覆處理及/或加熱處理之樹脂遮罩。[Washing method] The present invention in one aspect relates to a cleaning method (hereinafter, also referred to as "the cleaning method of the present invention"), which includes: using the detergent composition of the present invention, a cleaning agent attached from a resin mask The step of peeling the resin mask off the net object. In the cleaning method of the present invention, in one or more embodiments, the step of peeling the resin mask from the object to be cleaned includes contacting the object to be cleaned with the resin mask with the detergent composition of the present invention . According to the cleaning method of the present invention, the resin mask, especially the resin mask subjected to plating treatment and/or heat treatment, can be efficiently removed.

作為使用本發明之洗淨劑組合物自洗淨對象物剝離樹脂遮罩之方法或使本發明之洗淨劑組合物接觸洗淨對象物之方法,例如可列舉:藉由浸漬於裝有洗淨劑組合物之洗淨浴槽內而使其接觸之方法、噴霧狀地射出洗淨劑組合物而使其接觸之方法(噴淋方式)、浸漬期間進行超音波照射之超音波洗淨方法等。本發明之洗淨劑組合物可不稀釋而直接用於洗淨。作為洗淨對象物,可列舉上述洗淨對象物。Examples of the method of peeling the resin mask from the object to be cleaned using the detergent composition of the present invention or the method of bringing the detergent composition of the present invention into contact with the object to be cleaned include, for example, by immersing The method of contacting the detergent composition in the washing bath, the method of spraying the detergent composition and contacting it (spray method), the method of ultrasonic cleaning of ultrasonic irradiation during immersion, etc. . The detergent composition of the present invention can be directly used for cleaning without dilution. Examples of the objects to be cleaned include the objects to be cleaned described above.

本發明之洗淨方法於一個或複數個實施形態中,可包括使洗淨對象物接觸洗淨劑組合物後,用水進行漂洗,進行乾燥之步驟。本發明之洗淨方法於一個或複數個實施形態中,可包括使洗淨對象物接觸洗淨劑組合物後,用水漂洗之步驟。In one or more embodiments, the washing method of the present invention may include the steps of contacting the object to be washed with the detergent composition, rinsing with water, and drying. In one or more embodiments, the cleaning method of the present invention may include the step of rinsing with water after contacting the object to be cleaned with the detergent composition.

就易於發揮本發明之洗淨劑組合物之洗淨力之方面而言,本發明之洗淨方法較佳為於本發明之洗淨劑組合物與洗淨對象物接觸時照射超音波,更佳為該超音波為較高頻率。就相同觀點而言,上述超音波之照射條件例如較佳為26~72 kHz、80~1500 W,更佳為36~72 kHz、80~1500 W。In terms of ease of exerting the cleaning power of the detergent composition of the present invention, the cleaning method of the present invention preferably irradiates ultrasonic waves when the detergent composition of the present invention comes into contact with the object to be cleaned. It is better that the ultrasonic wave has a higher frequency. From the same viewpoint, the above-mentioned ultrasonic irradiation conditions are preferably, for example, 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.

於本發明之洗淨方法中,就易於發揮本發明之洗淨劑組合物之洗淨力之方面而言,洗淨劑組合物之溫度較佳為40℃以上,更佳為50℃以上,並且,就降低對含有有機樹脂之基板之影響之觀點而言,較佳為70℃以下,更佳為60℃以下。In the cleaning method of the present invention, in terms of easily exerting the cleaning power of the detergent composition of the present invention, the temperature of the detergent composition is preferably 40°C or higher, more preferably 50°C or higher, In addition, from the viewpoint of reducing the influence on the substrate containing the organic resin, it is preferably 70° C. or lower, and more preferably 60° C. or lower.

[電子零件之製造方法] 本發明於一態樣中係關於一種電子零件之製造方法(以下,亦稱為「本發明之電子零件之製造方法」),其包括:用本發明之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。作為洗淨對象物,可列舉上述洗淨對象物。本發明之電子零件之製造方法藉由使用本發明之洗淨劑組合物進行洗淨,而可有效地去除附著於電子零件之樹脂遮罩,因此可製造可靠性較高之電子零件。進而,藉由進行本發明之洗淨方法,可容易地去除附著於電子零件之樹脂遮罩,故而可縮短洗淨時間,可提高電子零件之製造效率。[Manufacturing method of electronic parts] The present invention in one aspect relates to a method for manufacturing an electronic component (hereinafter, also referred to as "the method for manufacturing an electronic component of the present invention"), which includes: using the detergent composition of the present invention to mask from a resin The step of peeling off the resin mask on the attached cleaning object. Examples of the objects to be cleaned include the objects to be cleaned described above. The manufacturing method of the electronic component of the present invention can be effectively removed by using the detergent composition of the present invention to remove the resin mask attached to the electronic component, so that the electronic component with higher reliability can be manufactured. Furthermore, by performing the cleaning method of the present invention, the resin mask attached to the electronic component can be easily removed, so the cleaning time can be shortened, and the manufacturing efficiency of the electronic component can be improved.

[套組] 本發明於一態樣中係關於一種用於本發明之洗淨方法及本發明之電子零件之製造方法之任一者之套組(以下,亦稱為「本發明之套組」)。本發明之套組於一個或複數個實施形態中,為用於製造本發明之洗淨劑組合物之套組。[Set] In one aspect, the present invention relates to a kit used in any one of the cleaning method of the present invention and the manufacturing method of the electronic part of the present invention (hereinafter, also referred to as "the kit of the present invention"). In one or more embodiments, the kit of the present invention is a kit for manufacturing the detergent composition of the present invention.

作為本發明之套組,於一個或複數個實施形態中,可列舉:一種套組(2液型洗淨劑組合物),其於不相互混合之狀態下包含含有成分A之溶液(第1液)及含有成分B之溶液(第2液),且第1液及第2液之至少一者進而含有成分C(水)之一部分或全部,第1液及第2液於使用時被混合。第1液及第2液被混合後,視需要可用成分C(水)進行稀釋。第1液及第2液各者中視需要可包含上述任意成分。根據本發明之套組,可獲得樹脂遮罩去除性優異之洗淨劑組合物。As a kit of the present invention, in one or more embodiments, a kit (two-component detergent composition), which contains a solution containing component A (the first Liquid) and the solution containing the component B (second liquid), and at least one of the first liquid and the second liquid further contains part or all of the component C (water), and the first liquid and the second liquid are mixed at the time of use . After the first liquid and the second liquid are mixed, they can be diluted with component C (water) as necessary. Each of the first liquid and the second liquid may contain the above-mentioned optional components as necessary. According to the kit of the present invention, a detergent composition excellent in resin mask removability can be obtained.

作為本發明之套組,於其他一個或複數個實施形態中,就獲得性及作業性之觀點而言,較佳為可列舉:具有含有30~50質量%之成分A且包含成分C作為剩餘部分之第1液及僅由成分B構成之第2液的套組;具有含有30~50質量%之成分A且包含成分C作為剩餘部分之第1液及含有1~99質量%之成分B且包含成分C作為剩餘部分之第2液的套組;或具有含有30~50質量%之成分A且包含成分C作為剩餘部分之第1液及含有1~99質量%之成分B且包含任意成分及成分C作為剩餘部分之第2液的套組。該等套組更佳為可進一步具有包含成分C之第3液,使用第3液,將上述第1液與上述第2液之混合物稀釋至任意濃度。As a set of the present invention, in one or a plurality of other embodiments, from the viewpoint of availability and workability, it is preferable to include a component A containing 30 to 50% by mass and a component C as the remaining Part of the first liquid and the second liquid consisting of only component B; the first liquid containing 30-50% by mass of component A and containing component C as the remaining part and the first liquid containing 1 to 99% by mass of component B And a kit containing component C as the remaining part of the second liquid; or having a first liquid containing component A of 30 to 50% by mass and containing component C as the remaining part and a component B containing 1 to 99% by mass and containing any The components and component C are used as the remaining second liquid kit. It is more preferable that these kits may further have a third liquid containing component C. Using the third liquid, the mixture of the first liquid and the second liquid is diluted to an arbitrary concentration.

本發明進而係關於以下之一個或複數個實施形態。 <1>一種樹脂遮罩剝離用洗淨劑組合物,其含有鹼劑(成分A)、有機溶劑(成分B)及水(成分C),且 成分B之漢森溶解度參數之座標在以δd=18.3、δp=6.8、δh=3.7為中心之半徑5.45 MPa0.5 之球之範圍內, 使用時成分C之含量為69.9質量%以上99.4質量%以下。The present invention further relates to one or more of the following embodiments. <1> A detergent composition for peeling off a resin mask, which contains an alkali agent (component A), an organic solvent (component B), and water (component C), and the coordinate of the Hansen solubility parameter of component B is δd = 18.3, δp = 6.8, δh = 3.7, with a radius of 5.45 MPa 0.5 as the center, the content of component C when used is 69.9% by mass or more and 99.4% by mass or less.

<2>如<1>記載之洗淨劑組合物,其中成分A為無機鹼。 <3>如<1>或<2>記載之洗淨劑組合物,其中成分A為選自氫氧化鈉、氫氧化鉀、氫氧化鋰、氫氧化鈣、碳酸鈉、碳酸鉀、矽酸鈉及矽酸鉀之至少1種無機鹼。 <4>如<1>記載之洗淨劑組合物,其中成分A為選自下述式(I)所表示之四級銨氫氧化物及下述式(II)所表示之胺之至少1種有機鹼。 [化3]

Figure 02_image005
於上述式(I)中,R1 、R2 、R3 及R4 分別獨立,為選自甲基、乙基、丙基、羥甲基、羥乙基及羥丙基之至少1種。 [化4]
Figure 02_image007
於上述式(II)中,R5 表示氫原子、甲基、乙基或胺基乙基,R6 為選自氫原子、羥乙基、羥丙基、甲基或乙基之至少1種,且R7 為選自胺基乙基、羥乙基或羥丙基之至少1種,或者,於式(II)中,R5 為選自甲基、乙基、胺基乙基、羥乙基或羥丙基之至少1種,且R6 與R7 相互鍵結而與式(II)中之N原子一同形成吡咯啶環或哌𠯤環。 <5>如<1>或<4>記載之洗淨劑組合物,其中成分A為四甲基氫氧化銨。 <6>如<1>至<5>中任一項記載之洗淨劑組合物,其中使用時成分A之含量較佳為0.1質量%以上,更佳為0.5質量%以上,進而較佳為1.0質量%以上,進而更佳為1.5質量%以上。 <7>如<1>至<6>中任一項記載之洗淨劑組合物,其中使用時成分A之含量較佳為15質量%以下,更佳為10質量%以下,進而較佳為7.5質量%以下,進而更佳為5質量%以下。 <8>如<1>至<7>中任一項記載之洗淨劑組合物,其中使用時成分A之含量較佳為0.1質量%以上15質量%以下,更佳為0.5質量%以上10質量%以下,進而較佳為1.0質量%以上7.5質量%以下,進而更佳為1.5質量%以上5質量%以下。 <9>如<1>至<8>中任一項記載之洗淨劑組合物,其中將成分B之HSP之座標設為(δdB 、δpB 、δhB )時,該成分B之HSP之座標(δdB 、δpB 、δhB )與成分座標X(δd=18.3、δp=6.8、δh=3.7)之距離(單位:MPa0.5 )滿足下式。 距離=[(δdB -18.3)2 +(δpB -6.8)2 +(δhB -3.7)2 ]0.5 ≦5.45 MPa0.5 <10>如<1>至<9>中任一項記載之洗淨劑組合物,其中成分B為選自苯乙酮、苯丙酮、大茴香醛、鄰甲氧基苯甲醛、對甲基苯乙酮、四氫呋喃、二甲氧基四氫呋喃、甲氧基環戊烷、二苯醚、苯甲醚、苯乙醚、二乙二醇二乙醚、二丙二醇二甲醚、環己酮、2-辛酮及苯甲醛之至少1種。 <11>如<1>至<10>中任一項記載之洗淨劑組合物,其中使用時成分B之含量較佳為0.5質量%以上,更佳為1質量%以上,進而較佳為3質量%以上,進而更佳為5質量%以上。 <12>如<1>至<11>中任一項記載之洗淨劑組合物,其中使用時成分B之含量較佳為30質量%以下,更佳為25質量%以下,進而較佳為20質量%以下,進而更佳為15質量%以下。 <13>如<1>至<12>中任一項記載之洗淨劑組合物,其中使用時成分B之含量較佳為0.5質量%以上30質量%以下,更佳為1質量%以上25質量%以下,進而較佳為3質量%以上20質量%以下,進而更佳為5質量%以上15質量%以下。 <14>如<1>至<13>中任一項記載之洗淨劑組合物,其中使用時成分A之含量為0.1質量%以上15質量%以下,且 使用時成分B之含量為0.5質量%以上30質量%以下。 <15>如<1>至<14>中任一項記載之洗淨劑組合物,其中成分A與成分B之質量比(A/B)較佳為0.05以上,更佳為0.08以上,進而較佳為0.1以上,進而更佳為0.15以上。 <16>如<1>至<15>中任一項記載之洗淨劑組合物,其中成分A與成分B之質量比(A/B)較佳為2以下,更佳為1以下,進而較佳為0.8以下,進而更佳為0.5以下。 <17>如<1>至<16>中任一項記載之洗淨劑組合物,其中成分A與成分B之質量比(A/B)較佳為0.05以上2以下,更佳為0.08以上1以下,進而較佳為0.1以上0.8以下,進而更佳為0.15以上0.5以下。 <18>如<1>至<17>中任一項記載之洗淨劑組合物,其中使用時成分C之含量為69.9質量%以上,較佳為70質量%以上,更佳為75質量%以上,進而較佳為80質量%以上。 <19>如<1>至<18>中任一項記載之洗淨劑組合物,其中使用時成分C之含量為99.4質量%以下,較佳為95質量%以下,更佳為90質量%以下,進而較佳為85質量%以下。 <20>如<1>至<19>中任一項記載之洗淨劑組合物,其中使用時成分C之含量為69.9質量%以上99.4質量%以下,較佳為70質量%以上95質量%以下,更佳為75質量%以上90質量%以下,進而較佳為80質量%以上85質量%以下。 <21>如<1>至<20>中任一項記載之洗淨劑組合物,其中洗淨劑組合物使用時有機物之總含量較佳為40質量%以下,更佳為35質量%以下,進而較佳為30質量%以下,進而更佳為25質量%以下,進而更佳為20質量%以下。 <22>如<1>至<21>中任一項記載之洗淨劑組合物,其中洗淨劑組合物使用時有機物之總含量較佳為0.5質量%以上,更佳為1質量%以上,進而較佳為3質量%以上,進而更佳為5質量%以上。 <23>如<1>至<22>中任一項記載之洗淨劑組合物,其中洗淨劑組合物使用時有機物之總含量較佳為0.5質量%以上40質量%以下,更佳為1質量%以上35質量%以下,進而較佳為3質量%以上30質量%以下,進而更佳為5質量%以上25質量%以下,進而更佳為5質量%以上20質量%以下。 <24>如<1>至<23>中任一項記載之洗淨劑組合物,其實質上不含含氮化合物及含磷化合物。 <25>如<1>至<24>中任一項記載之洗淨劑組合物,其中洗淨劑組合物中之含氮化合物及含磷化合物之合計含量未達0.1質量%,較佳為0.05質量%以下,更佳為0.01質量%以下,進而較佳為0質量%。 <26>如<1>至<25>中任一項記載之洗淨劑組合物,其中樹脂遮罩為經曝光及顯影之至少一種處理之負型乾膜光阻。 <27>一種洗淨方法,其包括:用如<1>至<26>中任一項記載之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。 <28>如<27>記載之洗淨方法,其中洗淨對象物為電子零件之製造中間物。 <29>一種電子零件之製造方法,其包括:用如<1>至<26>中任一項記載之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。 <30>一種如<1>至<26>中任一項記載之洗淨劑組合物作為電子零件之製造中之洗淨劑之使用。 <31>一種套組,其係用於如<27>或<28>記載之洗淨方法及如<29>記載之電子零件之製造方法之任一者之套組,且 於不相互混合之狀態下包含含有成分A之溶液(第1液)及含有成分B之溶液(第2液), 第1液及第2液之至少一者進而含有成分C之一部分或全部, 第1液與第2液於使用時被混合。 [實施例]<2> The detergent composition according to <1>, wherein component A is an inorganic base. <3> The detergent composition according to <1> or <2>, wherein component A is selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate And at least one inorganic base of potassium silicate. <4> The detergent composition according to <1>, wherein component A is at least 1 selected from the quaternary ammonium hydroxide represented by the following formula (I) and the amine represented by the following formula (II) An organic base. [Chemical 3]
Figure 02_image005
In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently, and are at least one selected from methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl. [Chemical 4]
Figure 02_image007
In the above formula (II), R 5 represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, and R 6 is at least one selected from a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group And R 7 is at least one selected from aminoethyl, hydroxyethyl or hydroxypropyl, or, in formula (II), R 5 is selected from methyl, ethyl, aminoethyl, hydroxy At least one of ethyl or hydroxypropyl, and R 6 and R 7 are mutually bonded to form a pyrrolidine ring or a piper ring together with the N atom in formula (II). <5> The detergent composition according to <1> or <4>, wherein component A is tetramethylammonium hydroxide. <6> The detergent composition according to any one of <1> to <5>, wherein the content of component A when used is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and further preferably 1.0% by mass or more, and more preferably 1.5% by mass or more. <7> The detergent composition according to any one of <1> to <6>, wherein the content of component A when used is preferably 15% by mass or less, more preferably 10% by mass or less, and further preferably 7.5 mass% or less, and more preferably 5 mass% or less. <8> The detergent composition according to any one of <1> to <7>, wherein the content of component A when used is preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.5% by mass or more 10 The mass% or less, further preferably 1.0 mass% or more and 7.5% mass% or less, still more preferably 1.5 mass% or more and 5 mass% or less. <9> The detergent composition according to any one of <1> to <8>, wherein the coordinate of the HSP of the component B is (δd B , δp B , δh B ), the HSP of the component B The distance (unit: MPa 0.5 ) between the coordinates (δd B , δp B , δh B ) and the component coordinates X (δd=18.3, δp=6.8, δh=3.7) satisfies the following formula. Distance = [(δd B -18.3) 2 +(δp B -6.8) 2 +(δh B -3.7) 2 ] 0.5 ≦5.45 MPa 0.5 <10> such as any of the items listed in <1> to <9> Detergent composition, wherein component B is selected from acetophenone, phenylacetone, anisaldehyde, o-methoxybenzaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane , Diphenyl ether, anisole, phenethyl ether, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde. <11> The detergent composition according to any one of <1> to <10>, wherein the content of component B when used is preferably 0.5% by mass or more, more preferably 1% by mass or more, and further preferably 3% by mass or more, and more preferably 5% by mass or more. <12> The detergent composition according to any one of <1> to <11>, wherein the content of component B when used is preferably 30% by mass or less, more preferably 25% by mass or less, and further preferably 20% by mass or less, and more preferably 15% by mass or less. <13> The detergent composition according to any one of <1> to <12>, wherein the content of the component B when used is preferably 0.5% by mass or more and 30% by mass or less, more preferably 1% by mass or more 25 The mass% or less, more preferably 3 mass% or more and 20 mass% or less, and still more preferably 5 mass% or more and 15 mass% or less. <14> The detergent composition according to any one of <1> to <13>, wherein the content of component A is 0.1% by mass or more and 15% by mass or less when used, and the content of component B is 0.5% by mass when used % Above 30% by mass. <15> The detergent composition according to any one of <1> to <14>, wherein the mass ratio of component A to component B (A/B) is preferably 0.05 or more, more preferably 0.08 or more, and It is preferably 0.1 or more, and more preferably 0.15 or more. <16> The detergent composition according to any one of <1> to <15>, wherein the mass ratio of component A to component B (A/B) is preferably 2 or less, more preferably 1 or less, and It is preferably 0.8 or less, and more preferably 0.5 or less. <17> The detergent composition according to any one of <1> to <16>, wherein the mass ratio of component A to component B (A/B) is preferably 0.05 or more and 2 or less, more preferably 0.08 or more 1 or less, more preferably 0.1 or more and 0.8 or less, and still more preferably 0.15 or more and 0.5 or less. <18> The detergent composition according to any one of <1> to <17>, wherein the content of component C when used is 69.9% by mass or more, preferably 70% by mass or more, and more preferably 75% by mass The above is more preferably 80% by mass or more. <19> The detergent composition according to any one of <1> to <18>, wherein the content of component C when used is 99.4% by mass or less, preferably 95% by mass or less, and more preferably 90% by mass The following is more preferably 85% by mass or less. <20> The detergent composition according to any one of <1> to <19>, wherein the content of component C when used is 69.9% by mass or more and 99.4% by mass or less, preferably 70% by mass or more and 95% by mass Below, it is more preferably 75% by mass or more and 90% by mass or less, and further preferably 80% by mass or more and 85% by mass or less. <21> The detergent composition according to any one of <1> to <20>, wherein the total content of organic substances when the detergent composition is used is preferably 40% by mass or less, more preferably 35% by mass or less It is more preferably 30% by mass or less, still more preferably 25% by mass or less, and still more preferably 20% by mass or less. <22> The detergent composition according to any one of <1> to <21>, wherein the total content of organic substances when the detergent composition is used is preferably 0.5% by mass or more, and more preferably 1% by mass or more It is more preferably 3% by mass or more, and still more preferably 5% by mass or more. <23> The detergent composition according to any one of <1> to <22>, wherein the total content of organic substances when the detergent composition is used is preferably 0.5% by mass or more and 40% by mass or less, more preferably 1 mass% or more and 35 mass% or less, more preferably 3 mass% or more and 30 mass% or less, still more preferably 5 mass% or more and 25 mass% or less, still more preferably 5 mass% or more and 20 mass% or less. <24> The detergent composition according to any one of <1> to <23>, which is substantially free of nitrogen-containing compounds and phosphorus-containing compounds. <25> The detergent composition according to any one of <1> to <24>, wherein the total content of the nitrogen-containing compound and the phosphorus-containing compound in the detergent composition is less than 0.1% by mass, preferably 0.05 mass% or less, more preferably 0.01 mass% or less, and further preferably 0 mass%. <26> The detergent composition according to any one of <1> to <25>, wherein the resin mask is a negative dry film photoresist that has been treated by at least one of exposure and development. <27> A cleaning method including the step of peeling the resin mask from the object to be cleaned to which the resin mask is attached using the detergent composition as described in any one of <1> to <26>. <28> The cleaning method described in <27>, wherein the object to be cleaned is an intermediate for manufacturing electronic parts. <29> A method of manufacturing an electronic part, comprising: peeling off the resin mask from the object to be cleaned attached to the resin mask using the detergent composition as described in any one of <1> to <26> step. <30> Use of the detergent composition as described in any one of <1> to <26> as a detergent in the manufacture of electronic parts. <31> A kit that is used for either the cleaning method described in <27> or <28> and the manufacturing method of electronic parts described in <29>, and they are not mixed with each other The state contains a solution containing the component A (the first liquid) and a solution containing the component B (the second liquid), at least one of the first liquid and the second liquid further contains a part or all of the component C, the first liquid and the second 2 liquids are mixed at the time of use. [Example]

以下,藉由實施例對本發明進行具體說明,本發明不受該等實施例任何限定。Hereinafter, the present invention will be specifically described by examples, but the present invention is not limited by these examples.

1.關於有機溶劑(成分B、非成分B)之物性(HSP之座標及距離) 有機溶劑之HSP之座標(δd1 、δp1 、δh1 )使用個人電腦用軟體「HSPiP:Hansen Solubility Parameters in Practice」算出。並且,藉由下式算出有機溶劑之HSP之座標(δd1 、δp1 、δh1 )與成分座標(δd=18.3、δp=6.8、δh=3.7)之距離。將結果示於表1。 距離=[(δd1 -18.3)2 +(δp1 -6.8)2 +(δh1 -3.7)2 ]0.5 1. About the physical properties of organic solvents (component B, non-component B) (coordinates and distances of HSP) The coordinates of HSP (δd 1 , δp 1 , δh 1 ) of organic solvents use PC software "HSPiP: Hansen Solubility Parameters in Practice". Then, the distance between the coordinates (δd 1 , δp 1 , δh 1 ) of the organic solvent and the component coordinates (δd=18.3, δp=6.8, δh=3.7) is calculated by the following formula. The results are shown in Table 1. Distance = [(δd 1 -18.3) 2 + (δp 1 -6.8) 2 + (δh 1 -3.7) 2] 0.5

[表1]

Figure 108125973-A0304-0001
[Table 1]
Figure 108125973-A0304-0001

2.實施例1~22及比較例1~9之洗淨劑組合物之製備 向高型之200 mL玻璃燒杯中以有效成分換算調配氫氧化鉀(成分A)2.5 g、苯乙酮(成分B)15.0 g及水(成分C)82.5 g,將其進行攪拌並混合,藉此製備實施例1之洗淨劑組合物。然後,藉由與實施例1相同之方法,於包含除成分A~C以外之成分之情形時亦同時調配該等,以成為表2所示之有效成分之組成比製備實施例2~22及比較例1~9之洗淨劑組合物。將各洗淨劑組合物之各成分之含量(質量%、有效成分)示於表2。2. Preparation of detergent compositions of Examples 1 to 22 and Comparative Examples 1 to 9 Potassium hydroxide (component A) 2.5 g, acetophenone (component B) 15.0 g and water (component C) 82.5 g were blended into a high-type 200 mL glass beaker in terms of active ingredients, mixed and mixed by This prepares the detergent composition of Example 1. Then, by the same method as in Example 1, in the case where the components other than the components A to C are included, these are also simultaneously formulated so as to become the composition ratio of the effective components shown in Table 2 Preparation Examples 2 to 22 and The detergent composition of Comparative Examples 1-9. Table 2 shows the content (mass %, active ingredient) of each component of each detergent composition.

作為實施例1~22及比較例1~9之洗淨劑組合物之成分,使用下述者。 (成分A) A1:氫氧化鉀[關東化學股份有限公司製造,特級,固形物成分為48質量%] A2:氫氧化鈉[關東化學股份有限公司製造,特級,固形物成分為48質量%] A3:四甲基氫氧化銨[昭和電工股份有限公司製造,TMAH(25%)] (成分B) B1:苯乙酮[富士膜和光純藥股份有限公司製造,特級] B2:苯丙酮[東京化成工業股份有限公司製造] B3:大茴香醛[富士膜和光純藥股份有限公司製造,特級] B4:鄰甲氧基苯甲醛[SIGMA-ALDRICH公司製造] B5:對甲基苯乙酮[富士膜和光純藥股份有限公司製造,一級] B6:四氫呋喃[富士膜和光純藥股份有限公司,特級] B7:二甲氧基四氫呋喃[東京化成工業股份有限公司製造] B8:甲氧基環戊烷[東京化成工業股份有限公司製造] B9:二苯醚[富士膜和光純藥股份有限公司製造,特級] B10:苯甲醚[富士膜和光純藥股份有限公司製造,特級] B11:苯乙醚[富士膜和光純藥股份有限公司製造,一級] B12:二乙二醇二乙醚[富士膜和光純藥股份有限公司製造,一級] B13:二丙二醇二甲醚[FUJIFILM Wako Chemical Corporation製造] B14:環己酮[富士膜和光純藥股份有限公司製造,一級] B15:2-辛酮[富士膜和光純藥股份有限公司製造,一級] B16:苯甲醛[富士膜和光純藥股份有限公司製造,特級] (非成分B) B17:二乙二醇丁醚[富士膜和光純藥股份有限公司製造,特級] B18:二乙二醇二甲醚[富士膜和光純藥股份有限公司製造,特級] B19:乙酸丁酯[富士膜和光純藥股份有限公司製造,一級] B20:二乙二醇苯醚[東京化成工業股份有限公司製造] B21:乙二醇[富士膜和光純藥股份有限公司製造,一級] (成分C) 水:用Organo Corporation製造之純水裝置G-10DSTSET製造之1 μS/cm以下之純水As the components of the detergent compositions of Examples 1 to 22 and Comparative Examples 1 to 9, the followings were used. (Component A) A1: Potassium hydroxide [Made by Kanto Chemical Co., Ltd., premium grade, solid content 48% by mass] A2: Sodium hydroxide [Made by Kanto Chemical Co., Ltd., premium grade, solid content 48% by mass] A3: Tetramethylammonium hydroxide [manufactured by Showa Denko Co., Ltd., TMAH (25%)] (Component B) B1: Acetophenone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., premium grade] B2: Phenylacetone [made by Tokyo Chemical Industry Co., Ltd.] B3: Anisaldehyde [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., premium grade] B4: o-methoxybenzaldehyde [manufactured by SIGMA-ALDRICH] B5: p-methylacetophenone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first class] B6: Tetrahydrofuran [Fujifilm Wako Pure Chemicals Co., Ltd., special grade] B7: Dimethoxytetrahydrofuran [made by Tokyo Chemical Industry Co., Ltd.] B8: methoxycyclopentane [made by Tokyo Chemical Industry Co., Ltd.] B9: Diphenyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., premium grade] B10: anisole [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., premium grade] B11: Phenethyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first class] B12: Diethylene glycol diethyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first class] B13: Dipropylene glycol dimethyl ether [manufactured by FUJIFILM Wako Chemical Corporation] B14: Cyclohexanone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first class] B15: 2-octanone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first class] B16: Benzaldehyde [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., premium grade] (Non-ingredient B) B17: Diethylene glycol butyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., premium grade] B18: Diethylene glycol dimethyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., premium grade] B19: Butyl acetate [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first class] B20: Diethylene glycol phenyl ether [made by Tokyo Chemical Industry Co., Ltd.] B21: Ethylene glycol [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first class] (Component C) Water: Pure water produced by Organo Corporation's pure water device G-10DSTSET, 1 μS/cm or less

3.洗淨劑組合物之評價 對所製備之實施例1~22及比較例1~9之洗淨劑組合物之樹脂遮罩去除性進行評價。3. Evaluation of detergent composition The resin mask removal properties of the prepared detergent compositions of Examples 1 to 22 and Comparative Examples 1 to 9 were evaluated.

[樹脂遮罩1之試樣之製作] 將直接成像(直接刻寫)用感光性膜(日立化成股份有限公司製造,Photek RD-1225,厚度為25 μm,負型乾膜光阻)於下述條件下層壓至玻璃環氧多層基板(日立化成股份有限公司製造,MCL-E-679FG)之表面,選擇性地進行曝光處理並使曝光部硬化後(曝光步驟),進行顯影處理,藉此去除未曝光部(顯影步驟),獲得具有抗蝕圖案(圖案形狀之負型樹脂遮罩)之基板。然後,對經上述顯影處理去除未曝光部之區域進行鍍銅處理,藉此獲得試樣(4 cm×4.5 cm)。 (1)層壓:使用清潔輥(RAYON INDUSTRIAL CO., LTD製造,RY-505Z)及真空敷料器(羅門哈斯公司製造,VA7024/HP5)以輥溫50℃、輥壓1.4 Bar、處理時間30秒進行。 (2)曝光:使用印刷基板用直接刻寫裝置(SCREEN Graphic and Precision Solutions Co., Ltd製造,Mercurex LI-9500),以曝光量15 mJ/cm2 進行曝光。 (3)圖案形狀:L/S=20 μm/20 μm之條紋狀圖案 (4)顯影:使用基板用顯影裝置(揚博科技股份有限公司製造,LT-980366)、30℃之1%碳酸鈉水溶液,以噴霧壓力0.2 MPa、47秒去除未曝光部之樹脂遮罩。[Preparation of the sample of resin mask 1] The photosensitive film for direct imaging (direct writing) (manufactured by Hitachi Chemical Co., Ltd., Photek RD-1225, thickness 25 μm, negative dry film photoresist) is as follows Laminated to the surface of a glass epoxy multilayer substrate (manufactured by Hitachi Chemical Co., Ltd., MCL-E-679FG) under conditions, after selectively performing exposure treatment and hardening the exposed portion (exposure step), performing development treatment to remove In the unexposed portion (development step), a substrate having a resist pattern (pattern-shaped negative resin mask) is obtained. Then, the area where the unexposed portion was removed by the above development treatment was subjected to copper plating treatment, thereby obtaining a sample (4 cm×4.5 cm). (1) Lamination: Use a cleaning roller (manufactured by RAYON INDUSTRIAL CO., LTD, RY-505Z) and a vacuum applicator (manufactured by Rohm and Haas Company, VA7024/HP5) at a roller temperature of 50°C, a roller pressure of 1.4 Bar, and a processing time 30 seconds. (2) Exposure: Using a direct writing device for printed substrates (manufactured by SCREEN Graphic and Precision Solutions Co., Ltd, Mercurex LI-9500), exposure was performed at an exposure amount of 15 mJ/cm 2 . (3) Pattern shape: Stripe pattern with L/S=20 μm/20 μm (4) Development: using a development device for substrate (Yangbo Technology Co., Ltd., LT-980366), 1% sodium carbonate at 30°C In the aqueous solution, the resin mask of the unexposed part was removed at a spray pressure of 0.2 MPa for 47 seconds.

[樹脂遮罩2之試樣之製作] 將感光性膜(日立化成股份有限公司製造,HP-1060,厚度為60 μm,負型乾膜光阻)於下述條件下層壓至玻璃環氧多層基板之表面,選擇性地進行曝光處理並使曝光部硬化後(曝光步驟),進行顯影處理,藉此去除未曝光部(顯影步驟),獲得具有抗蝕圖案(圖案形狀之負型樹脂遮罩)之基板。然後,對經上述顯影處理去除未曝光部之區域進行鍍銅處理,藉此獲得試樣(4 cm×4 cm)。 (1)層壓:使用清潔輥(RAYON INDUSTRIAL CO., LTD製造,RY-505Z)及真空敷料器(羅門哈斯公司製造,VA7024/HP5)進行。 (2)曝光:使用印刷基板用直接描畫裝置(SCREEN Graphic and Precision Solutions Co., Ltd製造,Mercurex LI-9500)進行曝光。 (3)圖案形狀:L/S=20 μm/20 μm之條紋狀圖案 (4)顯影:使用基板用顯影裝置(揚博科技股份有限公司製造,LT-980366)、1%碳酸鈉水溶液,去除未曝光部之樹脂遮罩。[Production of sample of resin mask 2] A photosensitive film (manufactured by Hitachi Chemical Co., Ltd., HP-1060, 60 μm thick, negative dry film photoresist) was laminated to the surface of the glass epoxy multilayer substrate under the following conditions, and selectively subjected to exposure treatment and After the exposed portion is hardened (exposure step), development processing is performed to remove the unexposed portion (development step), and a substrate having a resist pattern (pattern-shaped negative resin mask) is obtained. Then, the area where the unexposed portion was removed by the above development treatment was subjected to copper plating treatment, thereby obtaining a sample (4 cm×4 cm). (1) Lamination: A cleaning roller (manufactured by RAYON INDUSTRIAL CO., LTD, RY-505Z) and a vacuum applicator (manufactured by Rohm and Haas Company, VA7024/HP5) were used. (2) Exposure: Direct exposure using a printed substrate (SCREEN Graphic and Precision Solutions Co., Ltd., Mercurex LI-9500) was used for exposure. (3) Pattern shape: L/S=20 μm/20 μm stripe pattern (4) Development: Use a development device for substrate (Yangbo Technology Co., Ltd., LT-980366) and a 1% sodium carbonate aqueous solution to remove the resin mask of the unexposed part.

[洗淨試驗] 向高型之200 mL玻璃燒杯中添加各洗淨劑組合物100 g並加溫至60℃,於使用轉子[氟樹脂(PTFE),ϕ8 mm×25 mm]以轉速600 rpm進行攪拌之狀態下,將試樣浸漬4分鐘。然後,浸漬於向100 mL玻璃燒杯中添加100 g水而得之漂洗槽而進行漂洗後,進行自然乾燥。[Washing test] Add 100 g of each detergent composition to a high-type 200 mL glass beaker and heat to 60°C, using a rotor [fluororesin (PTFE), ϕ8 mm×25 mm] at a speed of 600 rpm for stirring , Immerse the sample for 4 minutes. Then, it was immersed in a rinse tank obtained by adding 100 g of water to a 100 mL glass beaker, rinsed, and then naturally dried.

[樹脂遮罩去除性評價(剝離率(%))] 使用光學顯微鏡「數位顯微鏡VHX-2000」(基恩士股份有限公司製造),將進行洗淨試驗後之試樣之各部位所殘存之樹脂遮罩之有無放大至300倍進行目視確認,算出剝離率(將進行洗淨試驗前存在樹脂遮罩之總面積設為100時樹脂遮罩經去除之部分之面積之比率(%))。將結果示於表2。[Evaluation of Removability of Resin Mask (Peeling Rate (%))] Using an optical microscope "Digital Microscope VHX-2000" (manufactured by Keyence Co., Ltd.), magnify the presence or absence of the resin mask remaining in each part of the sample after the washing test to 300 times to visually confirm and calculate the peeling Rate (the ratio (%) of the area where the resin mask is removed when the total area where the resin mask exists before the washing test is set to 100). The results are shown in Table 2.

[對基板之影響] 向250 mL之聚丙烯製廣口瓶中添加各洗淨劑組合物100 g,將玻璃環氧多層基板(2 cm×5 cm)進行浸漬,於60℃下保管7天後,用水漂洗,對乾燥後之基板表面之狀態進行目視觀察,將以下述評價基準評價之結果示於表2。 A:與試驗前無變化 B:基板表面變質[Impact on the substrate] Add 100 g of each detergent composition to a 250 mL polypropylene jar, immerse the glass epoxy multilayer substrate (2 cm×5 cm), store at 60°C for 7 days, rinse with water, The state of the surface of the substrate after drying was visually observed, and the evaluation results according to the following evaluation criteria are shown in Table 2. A: No change from before the test B: Substrate surface deterioration

[表2]

Figure 108125973-A0304-0002
Figure 108125973-A0304-0003
[Table 2]
Figure 108125973-A0304-0002
Figure 108125973-A0304-0003

如上述表2所示,可知實施例1~22之洗淨劑組合物與不含成分A或成分B之比較例1~7、9、成分C之含量不在規定範圍內之比較例8相比,樹脂遮罩去除性優異。又,成分C之含量在69.9~99.4質量%之範圍內之實施例1~22之洗淨劑組合物與成分C之含量未達69.9質量%之比較例8相比,對含有有機樹脂之基板之影響降低。進而,認為實施例1~22之洗淨劑組合物其有機物含量為40質量%以下,排水處理負荷較小。 [產業上之可利用性]As shown in Table 2 above, it can be seen that the detergent compositions of Examples 1 to 22 are compared with Comparative Examples 1 to 7, 9 that do not contain component A or component B, and Comparative Example 8 where the content of component C is not within the prescribed range , Excellent resin mask removal. In addition, the detergent composition of Examples 1 to 22 in which the content of component C is in the range of 69.9 to 99.4% by mass is compared with Comparative Example 8 in which the content of component C is less than 69.9% by mass. The impact is reduced. Furthermore, it is considered that the detergent compositions of Examples 1 to 22 have an organic content of 40% by mass or less, and the drainage treatment load is small. [Industry availability]

根據本發明,可提供一種樹脂遮罩去除性優異之樹脂遮罩剝離用洗淨劑組合物。由此,本發明之洗淨劑組合物作為電子零件之製造步驟所使用之洗淨劑組合物有用,可實現樹脂遮罩所附著之電子零件之洗淨步驟之縮短及所製造之電子零件之性能、可靠性之提高,可提高半導體裝置之生產性。According to the present invention, it is possible to provide a detergent composition for resin mask peeling which is excellent in resin mask removal properties. Thus, the detergent composition of the present invention is useful as a detergent composition used in the manufacturing process of electronic parts, which can shorten the cleaning process of the electronic parts to which the resin mask is attached and the electronic parts manufactured The improvement of performance and reliability can improve the productivity of semiconductor devices.

Claims (11)

一種樹脂遮罩剝離用洗淨劑組合物,其含有鹼劑(成分A)、有機溶劑(成分B)及水(成分C),且 成分B之漢森溶解度參數之座標在以δd=18.3、δp=6.8、δh=3.7為中心之半徑5.45 MPa0.5 之球之範圍內, 使用時成分C之含量為69.9質量%以上99.4質量%以下。A detergent composition for peeling off a resin mask, which contains an alkali agent (component A), an organic solvent (component B) and water (component C), and the coordinate of the Hansen solubility parameter of component B is δd=18.3, Within the range of spheres with a radius of 5.45 MPa 0.5 centered at δp=6.8 and δh=3.7, the content of component C when used is 69.9% by mass or more and 99.4% by mass or less. 如請求項1之洗淨劑組合物,其中使用時成分A之含量為0.1質量%以上15質量%以下,且 使用時成分B之含量為0.5質量%以上30質量%以下。The detergent composition according to claim 1, wherein the content of component A when used is 0.1% by mass or more and 15% by mass or less, and When used, the content of component B is 0.5% by mass or more and 30% by mass or less. 如請求項1之洗淨劑組合物,其中成分B為選自苯乙酮、苯丙酮、大茴香醛、鄰甲氧基苯甲醛、對甲基苯乙酮、四氫呋喃、二甲氧基四氫呋喃、甲氧基環戊烷、二苯醚、苯甲醚、苯乙醚、二乙二醇二乙醚、二丙二醇二甲醚、環己酮、2-辛酮及苯甲醛之至少1種。The detergent composition according to claim 1, wherein component B is selected from acetophenone, phenylacetone, anisaldehyde, o-methoxybenzaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, At least one of methoxycyclopentane, diphenyl ether, anisole, phenethyl ether, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde. 如請求項1之洗淨劑組合物,其中成分A為無機鹼。The detergent composition according to claim 1, wherein component A is an inorganic base. 如請求項1之洗淨劑組合物,其實質上不含含氮化合物及含磷化合物。The detergent composition according to claim 1, which is substantially free of nitrogen-containing compounds and phosphorus-containing compounds. 如請求項1至5中任一項之洗淨劑組合物,其中樹脂遮罩為經曝光及顯影之至少一種處理之負型乾膜光阻。The detergent composition according to any one of claims 1 to 5, wherein the resin mask is a negative dry film photoresist processed by at least one of exposure and development. 一種洗淨方法,其包括:用如請求項1至6中任一項之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。A cleaning method comprising the step of peeling the resin mask from the object to be cleaned attached to the resin mask with the detergent composition according to any one of claims 1 to 6. 如請求項7之洗淨方法,其中洗淨對象物為電子零件之製造中間物。The cleaning method according to claim 7, wherein the cleaning object is an intermediate for manufacturing electronic parts. 一種電子零件之製造方法,其包括:用如請求項1至6中任一項之洗淨劑組合物,自樹脂遮罩所附著之洗淨對象物剝離樹脂遮罩之步驟。A method for manufacturing an electronic part, comprising: using the detergent composition according to any one of claims 1 to 6, to peel off the resin mask from the object to be cleaned attached to the resin mask. 一種如請求項1至6中任一項之洗淨劑組合物作為電子零件之製造中之洗淨劑之用途。Use of the detergent composition according to any one of claims 1 to 6 as a detergent in the manufacture of electronic parts. 一種套組,其係用於如請求項7或8之洗淨方法及如請求項9之電子零件之製造方法之任一者的套組,且 於不相互混合之狀態下包含含有成分A之溶液(第1液)及含有成分B之溶液(第2液), 第1液及第2液之至少一者進而含有成分C之一部分或全部, 第1液與第2液於使用時被混合。A set which is used for any one of the cleaning method as in claim 7 or 8 and the manufacturing method of electronic parts as in claim 9, and Containing the solution containing the component A (the first liquid) and the solution containing the component B (the second liquid) without mixing with each other, At least one of the first liquid and the second liquid further contains part or all of component C, The first liquid and the second liquid are mixed at the time of use.
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