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TW201901887A - 於未事先圖樣化基板上電器互連電路元件 - Google Patents

於未事先圖樣化基板上電器互連電路元件 Download PDF

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Publication number
TW201901887A
TW201901887A TW107105832A TW107105832A TW201901887A TW 201901887 A TW201901887 A TW 201901887A TW 107105832 A TW107105832 A TW 107105832A TW 107105832 A TW107105832 A TW 107105832A TW 201901887 A TW201901887 A TW 201901887A
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Taiwan
Prior art keywords
dielectric substrate
die
droplets
substrate
lower side
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Application number
TW107105832A
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English (en)
Inventor
邁克爾 澤奴
茲維 科特勒
奧佛 福格
Original Assignee
以色列商奧寶科技股份有限公司
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Publication of TW201901887A publication Critical patent/TW201901887A/zh

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Abstract

一種用於生產電子裝置之方法包含將一晶粒固定至一介電基板，該晶粒包含具有複數個整體式觸點之一電子元件。在固定該晶粒之後，在該介電基板上及該等整體式觸點至少其中之一上印刷一導電走線，以在該基板上之該導電走線與該電子元件之間形成一歐姆連接。

Description

於未事先圖樣化基板上電器互連電路元件
本發明係關於電子裝置之製作，且具體而言係關於用於藉由將導電走線（conductive trace）直寫於一基板上來生產電路之方法及裝置。
在雷射直寫（laser direct-write；LDW）技術中，使用一雷射光束、藉由受控材料剝蝕（ablation）或沉積來形成具有空間解析三維（three dimensional；3D）結構之一經圖樣化表面。雷射誘導前向轉移（laser-induced forward transfer；LIFT）係為一種可應用於在一表面上沉積微圖樣之雷射直寫技術。
在雷射誘導前向轉移中，雷射光子提供驅動力以自一供體膜（donor film）朝一受體基板（acceptor substrate）噴射一小體積之材料。通常，雷射光束與被塗覆至一非吸收性載體基板上之供體膜之內側相互作用。換言之，在入射雷射光束傳播穿過透明載體之後，光子才被膜之內表面吸收。在某一能量臨界值以上，自供體膜朝基板之表面噴射材料，在此項技術中已知之雷射誘導前向轉移系統中，該基板通常被放置成緊密靠近或甚至接觸供體膜。可改變所施加雷射能量，以控制在受輻照膜體積內生成之前向推進力。納高（Nagel）及利珀特（Lippert）於在以下期刊中發佈之「用於裝置製作之雷射誘導前向轉移（Laser-Induced Forward Transfer for the Fabrication of Devices）」中研究了雷射誘導前向轉移之原理及在微製作中之應用：奈米材料：利用雷射進行處理及表徵 （Nanomaterials: Processing and Characterization with Lasers ），辛格（Singh）等人，編輯（威利-VCH出版社有限責任兩合公司（Wiley-VCH Verlag GmbH & Co. KGaA），2012年），第255頁至第316頁。
已為多種應用（例如：電器電路修復）開發出使用金屬供體膜之雷射誘導前向轉移技術。舉例而言，PCT國際公開案第WO 2010/100635號（其揭露內容以引用方式併入本文中）闡述了一種修復電器電路之系統及方法，其中使用一雷射來預先處理形成於一電路基板上之一導體之一導體修復區域。如以下之一方式對一供體基板施加雷射光束：使供體基板之一部分自供體基板脫離並被轉移至一預定導體位置。
作為另一實例，PCT國際公開案第WO 2015/181810號（其揭露內容以引用方式併入本文中）闡述了一種使用一透明供體基板及一供體膜來進行材料沉積之方法，該透明供體基板具有相對之一第一表面及一第二表面，該供體膜包含形成於第二表面上之一金屬。將供體基板靠近一受體基板定位，使第二表面面朝受體基板。引導雷射輻射脈衝穿過供體基板之第一表面並照射於供體膜上，以誘導熔融材料之微滴（droplet）自供體膜噴射至受體基板上。
雷射誘導前向轉移可用於在多種類型之基板上印刷金屬走線。舉例而言，PCT國際公開案第WO 2016/063270號（其揭露內容以引用方式併入本文中）闡述了一種使用上面沉積有一供體膜之一透明供體基板進行金屬化之方法，該供體膜包含厚度小於2微米（µm）之一金屬。將供體基板靠近包含一半導體材料之一受體基板定位，使供體膜面朝受體基板且在供體膜與受體基板之間具有至少0.1毫米（mm）之一間隙。引導脈衝持續時間小於2奈秒（ns）之一雷射脈衝列照射於供體基板上，以使金屬之微滴自供體層噴射並落於受體基板上，藉此形成與半導體材料呈歐姆接觸之一電路走線。
下文中所述之本發明實施例提供用於將一基板上之各電子元件互連之新穎技術。
因此，根據本發明之一實施例，提供一種用於生產電子裝置之方法。該方法包含將一晶粒固定至一介電基板，該晶粒包含具有複數個整體式觸點（integral contact）之一電子元件。在固定該晶粒之後，在該介電基板上及該等整體式觸點至少其中之一上印刷一導電走線，以在該介電基板上之該導電走線與該電子元件之間形成一歐姆連接（ohmic connection）。
在某些實施例中，印刷該導電走線之步驟包含：將一導電材料之複數個微滴噴射至該介電基板上及該等整體式觸點中該至少其中之一上。在所揭露實施例中，噴射該等微滴之步驟包含：引導一脈衝雷射光束（pulsed laser beam）照射於包含該導電材料之一供體膜上，藉此藉由雷射誘導前向轉移（LIFT）而噴射該等微滴。在一個實施例中，噴射該等微滴之步驟包含：將該脈衝雷射光束引導成使該等微滴係相對於該介電基板之一表面以一斜角朝該晶粒噴射。另外或作為另一選擇，噴射該等微滴之步驟包含：引導該脈衝雷射光束照射於一第一供體膜上以在該介電基板上沿該導電走線之一軌道形成一黏附層（adhesion layer），並接著引導該脈衝雷射光束照射於一第二供體膜上以在該黏附層上積增該導電走線，該第一供體膜包含具有一第一熔化溫度之一第一金屬，該第二供體膜包含具有一第二熔化溫度之一第二金屬，該第二熔化溫度高於該第一熔化溫度。
通常，該晶粒具有相對之一上部側及一下部側，其中該下部側固定至該介電基板，且在某些實施例中，上面印刷有該導電走線之該等整體式觸點中該至少其中之一係位於該上部側上。在一所揭露實施例中，噴射該等微滴之步驟包含：在該電子元件旁邊自該介電基板至該等整體式觸點中該至少其中之一由所噴射之該等微滴積增一柱。作為另一選擇，上面印刷有該導電走線之該等整體式觸點中該至少其中之一係位於該上部側與該下部側間之橫向側（lateral side）其中之一上。
在一所揭露實施例中，該方法包含：在噴射該等微滴之前，於該基板中形成一孔陣列以抑制該等微滴自該介電基板反衝（recoil）。
在一個實施例中，該方法包含藉由以下在該介電基板上印刷複數個黏合劑點（adhesive dot）：藉由雷射誘導前向轉移（LIFT）將一黏合劑材料之複數個微滴噴射至該介電基板上，其中固定該晶粒之步驟包含將該晶粒放置於該等黏合劑點上。另外或作為另一選擇，該方法包含：在該晶粒已被固定至該介電基板之後，藉由雷射誘導前向轉移LIFT將一黏合劑材料之複數個微滴噴射至該晶粒之該上部側上。
在所揭露實施例中，該導電走線係印刷於該介電基板上之一軌跡（locus）上，在固定該晶粒之前，沿該軌跡不存在導電材料。在某些實施例中，印刷該導電走線之步驟包含：自動感測該等整體式觸點中該至少其中之一的一位置，並因應於自動感測到之該位置而印刷該導電走線。
在某些實施例中，該介電基板包含一撓性箔（flexible foil），該撓性箔可包含選自由以下組成之一材料群組之一材料：聚合物、紙張、及織物。
根據本發明之一實施例，亦提供一種用於生產電子裝置之系統。該系統包含一放置站（placement station），用以將一晶粒固定至一介電基板，該晶粒包含具有複數個整體式觸點之一電子元件。一印刷站（printing station）用以在該介電基板上及已固定至該介電基板之該晶粒之該等整體式觸點至少其中之一上印刷一導電走線，以在該介電基板上之該導電走線與該電子元件之間形成一歐姆連接。
在傳統之電子電路製造製程中，首先在一介電基板（例如：一剛性或撓性印刷電路基板）上沉積由導電走線形成之一圖樣。接著，將電路元件（例如：半導體晶粒以及其他主動及被動元件）固定至基板並通常藉由焊接或打線（wire bonding）連接至走線。此係為電路製造及組裝中被公認的操作次序。
然而，在現代電子產品中，日益需要將電子電路整合至可能與傳統印刷電路技術不相容的其他種類之基板（剛性及撓性）上。舉例而言，某些應用要求將電子裝置安裝並互連於撓性基板（例如：塑膠箔、紙張或織物）上。使傳統製程適應此等基板係具有挑戰性且昂貴的。
本文所述之本發明實施例藉由反轉被公認的操作次序來解決此種問題：首先，例如藉由一適合之黏合劑將一晶粒固定至介電基板，該晶粒包含具有複數個整體式觸點之一電子元件。在固定晶粒之後，在介電基板上及晶粒之整體式觸點至少其中之一上印刷一導電走線，因此在基板上之導電走線與電子元件之間形成一歐姆連接。可將其他主動及被動元件固定至基板並以相似之方式進行互連。
可以此種方式在介電基板上之一軌跡上印刷導電走線，在固定晶粒之前，該軌跡上不存在導電材料。換言之，所揭露技術在執行對走線之沉積及將走線連接至電路元件時僅需要進行一個製程步驟。為確保準確地印刷導電走線，可在晶粒被固定至基板之後使用一自動感測系統（例如：一電腦視覺系統）來感測晶粒之觸點之位置，且接著可導引對走線之印刷至所感測到之位置。
在所揭露實施例中，使用一雷射誘導前向轉移製程來印刷導電走線，在該雷射誘導前向轉移製程中，將一導電材料之微滴噴射至介電基板上及晶粒之整體式觸點上。（此等實施例假設晶粒之下部側被固定至介電基板，且上面印刷有導電走線之整體式觸點係位於晶粒之上部側或橫向側上。）如下文中詳細所述，對金屬微滴之雷射誘導前向轉移印刷能夠克服基板與晶粒上部側上之觸點間之大的高度差距（大約為數百微米）且同時能夠產生極精細走線。此等走線可係藉由線寬小至10微米至20微米之雷射誘導前向轉移來印刷，且可在需要時被修整（例如：藉由印刷後雷射處理）成甚至更窄之寬度。此外，對金屬及高黏性膏料之雷射誘導前向轉移印刷對基板性質（例如：孔隙度（porosity）、液體吸收度（liquid absorbance）及表面能量）相對不敏感，且因此可甚至在多孔之吸收性基板（例如：紙張及織物）上以高準確度印刷精細走線。此種製程可用於形成後來將耐受（在極限內）對基板之彎曲及拉伸之電路。
然而，作為另一選擇或另外，在某些應用中，可應用此項技術中已知的其他用於導電材料直寫之技術來形成導電走線至少其中之某些。
第1圖係為根據本發明一實施例用於電子電路組裝之一系統20之方塊圖及側視圖。在所繪實施例中，一放置站26將一元件（例如：一半導體晶粒24）放置於一電路基板22上。放置站26可包含例如一取放機器（pick-and-place machine），在該取放機器中，一機械臂28根據一預定義電路佈局，在來自一控制單元32之指令下將元件放置於基板22上。通常，基板22被安裝於一定位總成30（例如：一平移載台）上，以使臂28能夠到達所有所需位置。然而，放置站26之操作與此項技術中已知之取放機器之操作之不同在於，晶粒24係在印刷導電走線之前被放置於基板22上，該等導電走線隨後將連接至晶粒。
視需要，為確保在系統20中實施後續操作之準確度，一感測站34偵測基板22上放置晶粒24之實際位置。感測站34包含例如：一照相機36，以擷取基板22之影像。控制單元32處理此等影像，以確定元件在基板上之確切位置。雖然為使概念清晰起見在第1圖中將感測站34顯示為一單獨之單元，然而，在實務中，此等感測器（例如：照相機36）及感測功能可與系統20中之其他各站整合於一起。在系統20中應用感測站34之特別有利之處在於克服了此項技術中已知之取放工具之有限準確度，以及在組裝製程之過程中在一撓性基板之形狀上發生之可能畸變。精確地感測晶粒24及其他元件之位置使得能夠在元件已被固定至基板22之後準確地印刷極精細之互連走線（例如：寬度為20微米或更小）。
更一般而言，控制單元32可依據晶粒相對於其他電路元件之實際位置來調適欲印刷之走線。舉例而言，當一給定晶粒上存在高密度之電路元件或諸多輸入/輸出接腳，以及當存在窄線而應將晶粒相對於電路其餘部分之最終（實際）位置考量在內時，此種調適係尤其有用的。在此等情形下，控制單元32將走線位置選擇成符合電氣設計規則並避免電路缺陷。此種方法可用於形成元件密度大至使用傳統製造製程可達成之程度或甚至更大程度之電路。
視基板22之材料性質而定，可使用一表面準備站（surface preparation station）38來處理基板22之表面，以增強走線在表面上之黏附性。舉例而言，當表面極為平滑時，表面準備站38可在表面中形成小孔（通常為數微米深及數微米寬）之陣列，此將使表面粗糙化且在後續雷射誘導前向轉移印刷階段中降低金屬微滴自表面之反衝。具體而言，該等孔可係在欲印刷於基板22上之導電走線之軌跡中形成，或者作為另一選擇係在基板22之更寬區域上形成。該等孔可係藉由例如：一雷射而鑽製，或者係以機械方式壓印於基板22之表面中。
一印刷站（例如：一雷射誘導前向轉移站40）在基板22上印刷與晶粒24上之接觸墊呈歐姆連接之導電走線56。雷射誘導前向轉移站40包含一光學總成41，在光學總成41中，一雷射42發出脈衝輻射。光學裝置46將雷射光束48聚焦至上面沉積有至少一個供體膜52之一透明供體基板50上。定位總成30將供體基板50及/或電路基板22定位成使得供體基板50靠近受體基板之上表面，使供體膜52面朝電路基板且在供體膜52與電路基板之間具有一小的間隙（通常不超過幾百微米且可能更小）。雖然為簡明起見在第1圖中將定位總成30顯示為位於電路基板22下方之一基本X-Y-Z載台，然而在實務中，另外或作為另一選擇，雷射誘導前向轉移站40中之定位總成30可能夠對供體基板50及/或光學總成41之元件進行定位，如熟習此項技術者將明瞭。
供體基板50通常包含一玻璃或塑膠片材或其他適合之透明材料，而供體膜52包含一適合之供體材料，例如：一或多種純金屬及/或金屬合金。通常，供體膜之厚度不超過幾微米。
光學裝置46將光束48聚焦成穿過供體基板50之外表面並照射於供體膜52上，藉此使一流體之微滴54自供體膜52噴射並飛跨間隙而落於電路基板22上。該流體包含呈熔融形式的供體膜52中之材料，該材料接著在受體表面上硬化以形成具有由印刷圖樣界定之一形狀之固體塊。一掃描器44（例如：一旋轉鏡及/或一聲光束偏轉器）在控制單元32之控制下將雷射光束48掃描成在供體膜52上輻照出不同光點且因此在電路基板22上之適當位置中形成導電走線56。
雷射42例如：包含具有倍頻輸出（frequency-doubled output）之一脈衝Nd:YAG雷射，此允許脈衝振幅由控制單元32方便地控制。通常，控制單元32包含一通用電腦，其具有適用於控制以下並自以下接收回饋之介面：光學總成41、定位總成30及系統20之其他元件。發明人已發現，為達成良好之雷射誘導前向轉移沉積結果，最佳脈衝持續時間處於0.1奈秒至1奈秒之範圍中，但視應用要求而定，可使用更長或更短之脈衝。光學裝置46可以類似方式進行控制，以調整由雷射光束在供體膜52上形成之焦斑（focal spot）之大小。
微滴54之大小尤其由雷射脈衝能量、持續時間及焦斑大小、以及供體膜厚度決定。舉例而言，上述之PCT國際公開案第2015/181810號闡述了可應用於使每一雷射脈衝使得自供體膜噴射一個相對大的微滴之雷射誘導前向轉移技術及參數。此等技術及參數可有利地應用於雷射誘導前向轉移站40中，乃因微滴係以準確之方向性朝電路基板22噴射，進而使得有可能在噴射微滴期間將供體膜52保持於距受體基板至少100微米之一距離處並精確地形成所需結構。
在某些實施例中，雷射誘導前向轉移站40使得自不同供體膜52噴射組成物不同之二或更多種流體之微滴54。舉例而言，可藉由自雷射42引導光束48照射於含有不同材料之供體膜52（位於同一供體基板50或不同供體基板上）之不同區域上來噴射不同流體。可依序朝電路基板22上之同一位置及/或朝不同位置噴射不同流體，以印刷所需走線56。
舉例而言，為增強走線56與某些類型之電路基板（例如：聚合物基板）之黏附性，使用一第一供體膜52來沿走線之軌跡印刷一初始黏附層，第一供體膜52包含具有一低熔化溫度之一金屬，例如：錫或一錫合金。低溫金屬微滴在使聚合物局部熔化之同時快速地冷卻，因此會形成將易於黏附溫度及能量更高之後續雷射微滴之一層。（此黏附層不需要係為密集的或完全地塗覆基板。覆蓋走線56之既定面積之不超過20%至30%之一低密度黏附層通常便足以錨固後續結構層。）此後，在黏附層上印刷具有一結構金屬（例如：銅、鋁或鎳）之一第二供體膜52，以達到走線之所需尺寸、連接性及導電性。如前面所述，控制單元32控制掃描器44及光學總成41之其他元件，以將來自膜52之供體材料寫至電路基板22上之適當位置並視需要進行多個遍次（pass），以將供體材料之沉積體積積增至所需厚度。
第2A圖至第2D圖係為顯示根據本發明一實施例在生產一電子電路時之連續階段之示意性圖解。作為第2A圖所示之一預備步驟，將基板22塗覆一黏合劑層60或作為另一選擇塗覆一適合之黏合劑圖樣（例如：一黏合劑點陣列（圖中未顯示）），黏合劑層60或黏合劑圖樣亦可藉由一雷射誘導前向轉移製程來印刷。（當需要時，亦可使用黏合劑雷射誘導前向轉移印刷在晶粒24及其他電路元件之頂部上印刷黏合劑點。）接著，例如藉由放置站26將晶粒24固定於適當位置中，使晶粒24之下部側擱置於黏合劑層60上，如第2B圖中所示。在所有元件已被放置於基板22上之後，可使黏合劑層60固化（例如，藉由施加紫外線輻射或熱量），以將元件牢固地保持於適當位置中。
當必要時，表面準備站38在基板22上準備軌道62，如第2C圖中所示，隨後將在軌道62上印刷走線56。如前面所闡釋，此種準備對於固有之粗糙度不足以捕獲並保持由雷射誘導前向轉移站40印刷之微滴之材料而言係為有利的。軌道62可例如含有由直徑係為微滴54之直徑之1倍至2倍且深度為大致3微米至6微米之潛孔形成之一陣列。作為另一選擇或另外，可操作雷射誘導前向轉移站來形成一初始金屬黏附層，如以上所闡釋。另一方面，可無需在足夠多孔之基板材料上進行雷射誘導前向轉移印刷前之表面準備。
最終，由雷射誘導前向轉移站40在基板22上及在晶粒24之上部側上之整體式觸點上印刷導電走線56，如第2D圖中所示。走線56積增於晶粒24之邊緣上，以與晶粒之觸點連接。（此後一步驟之一實施方案之細節顯示於第4A圖至第4C圖中。）雖然雷射誘導前向轉移站40能夠如以上所闡釋印刷極精細走線，然而在某些情形中，可印刷更寬及/或更厚之導電走線以在操作中遠離電路元件來散熱。
第3圖係為根據本發明一實施例由一掃描電子顯微鏡（Scanning Electron Microscope；SEM）對組裝至基板22上之一實際晶粒24所擷取之一影像。在此實例中，基板22係為一聚對苯二甲酸乙二酯（polyethylene terephthalate；PET）箔，而晶粒24包含呈一表面安裝式封裝形式之一發光二極體（light-emitting diode；LED）。走線56係自雷射誘導前向轉移微滴積增而成，且在晶粒之「凸肩（shoulder）」上延伸以到達上部側上之接觸墊。在位於晶粒24之二個相對側上之走線56之間施加一適合之電壓會使發光二極體發出光。
第4A圖至第4C圖係為基板22上之晶粒24之示意性側視圖，其顯示根據本發明一實施例在將一電路走線連接至晶粒24上部側上之觸點70時之連續階段。在如第4A圖中所示首先放置晶粒24之後，雷射誘導前向轉移站40沉積連續微滴72，以形成高達觸點70之一柱74，如第4B圖至第4C圖中所示。發明人已藉由積增成堆之單個微滴54而形成寬度為10微米至20微米之此種柱。隨著柱74之高度增長，定位總成30可將供體基板50遠離電路基板移動，以在供體表面與受體表面之間維持一充足間隙。
期望將一小的傾斜度（大約3°）構建至柱中，以防止在柱與晶粒觸點之間打通間隙。另外或作為另一選擇，可應用成角度式雷射誘導前向轉移印刷（其中自供體膜52相對於基板22之表面以一斜（非垂直）角噴射微滴），以利用金屬保形地塗覆晶粒之橫向側而使柱與晶粒之間不具有間隙，且因此增強走線及連接之機械穩健性（mechanical robustness）。例如，在PCT國際公開案第WO 2016/116921號（其揭露內容以引用方式併入本文中）中闡述了在此方面可使用之成角度式雷射誘導前向轉移印刷技術。
柱74取代了用於在此項技術中已知之電子裝置中形成此種觸點之打線。使用雷射誘導前向轉移來形成此種觸點既增強了裝置相對於機械衝擊之穩健性又可減小整體大小，乃因不需要在元件周圍為打線之連接留出空間。
雖然在各圖中所示及在上文所述之實例係關於特定類型之元件，然而本發明之原理可應用於組裝包含廣泛的不同種類之元件之電路，該等元件包含（但不限於）： · 半導體晶粒。 · 主動裝置，例如電池、光伏打裝置、感測器、光電子裝置、薄膜裝置、及微機電系統（micro-electromechanical system；MEMS）裝置。 · 經預先組裝之混合式裝置，例如上面已安裝有元件之剛性或撓性箔。 · 表面安裝式裝置，例如離散電晶體、電容器、電感器及電阻器。
因此，應瞭解，以上所述之實施例係以舉例方式闡述，且本發明並非僅限於上文中所具體顯示及闡述之內容。相反，本發明之範圍包含上文中所述之各種特徵之組合及子組合以及熟習此項技術者在閱讀前述說明之後將設想到並且先前技術中尚未揭露之其變形形式及潤飾。
20‧‧‧系統
22‧‧‧電路基板
24‧‧‧半導體晶粒
26‧‧‧放置站
28‧‧‧機械臂
30‧‧‧定位總成
32‧‧‧控制單元
34‧‧‧感測站
36‧‧‧照相機
38‧‧‧表面準備站
40‧‧‧雷射誘導前向轉移站
41‧‧‧光學總成
42‧‧‧雷射
44‧‧‧掃描器
46‧‧‧光學裝置
48‧‧‧雷射光束
50‧‧‧供體基板
52‧‧‧供體膜/第一供體膜
54‧‧‧微滴
56‧‧‧導電走線
60‧‧‧黏合劑層
62‧‧‧軌道
70‧‧‧觸點
72‧‧‧微滴
74‧‧‧柱
結合圖式閱讀以下對本發明各實施例之詳細說明，將會更充分地理解本發明，其中： 第1圖係為根據本發明一實施例用於電子電路組裝之一系統之示意性側視圖及方塊圖； 第2A圖至第2D圖係為顯示根據本發明一實施例在生產一電子電路時之連續階段之示意性圖解； 第3圖係為根據本發明一實施例由一掃描電子顯微鏡（scanning electron microscope；SEM）對組裝至一電路中之一電子元件所擷取之一影像；以及 第4A圖至第4C圖係為一基板上之一電子元件之示意性側視圖，其顯示根據本發明一實施例在將一電路走線連接至電子元件時之連續階段。

Claims (30)

  1. 一種用於生產電子裝置之方法，該方法包含： 將一晶粒固定至一介電基板，該晶粒包含具有複數整體式觸點（integral contact）之一電子元件；以及 於固定該晶粒之後，在該介電基板上及至少其中之一該等整體式觸點上印刷一導電走線（conductive trace），以在該介電基板上之該導電走線與該電子元件之間形成一歐姆連接（ohmic connection）。
  2. 如請求項1所述之方法，其中印刷該導電走線之步驟包含：將一導電材料之複數微滴（droplet）噴射至該介電基板上及該至少其中之一該等整體式觸點中上。
  3. 如請求項2所述之方法，其中噴射該等微滴之步驟包含：引導一脈衝雷射光束（pulsed laser beam）照射於包含該導電材料之一供體膜（donor film）上，藉此藉由雷射誘導前向轉移（laser-induced forward transfer；LIFT）而噴射該等微滴。
  4. 如請求項3所述之方法，其中噴射該等微滴之步驟包含：將該脈衝雷射光束引導成使該等微滴係相對於該基板之一表面以一斜角朝該晶粒噴射。
  5. 如請求項3所述之方法，其中噴射該等微滴之步驟包含：引導該脈衝雷射光束照射於一第一供體膜上以在該介電基板上沿該導電走線之一軌道形成一黏附層（adhesion layer），並接著引導該脈衝雷射光束照射於一第二供體膜上以在該黏附層上積增該導電走線，該第一供體膜包含具有一第一熔化溫度之一第一金屬，該第二供體膜包含具有一第二熔化溫度之一第二金屬，該第二熔化溫度高於該第一熔化溫度。
  6. 如請求項2所述之方法，其中該晶粒具有相對之一上部側及一下部側，其中該下部側固定至該介電基板，且其中上面印刷有該導電走線之該等整體式觸點中該至少其中之一係位於該上部側上。
  7. 如請求項6所述之方法，其中噴射該等微滴之步驟包含：在該電子元件旁邊自該介電基板至該等整體式觸點中該至少其中之一由所噴射之該等微滴積增一柱。
  8. 如請求項2所述之方法，其中該晶粒具有相對之一上部側及一下部側，在該上部側與該下部側之間具有複數個橫向側（lateral side），其中該下部側固定至該介電基板，且其中上面印刷有該導電走線之該等整體式觸點中該至少其中之一係位於該等橫向側其中之一上。
  9. 如請求項2所述之方法，包含在噴射該等微滴之前，於該介電基板中形成一孔陣列以抑制該等微滴自該介電基板反衝（recoil）。
  10. 如請求項1所述之方法，包含藉由以下在該介電基板上印刷複數個黏合劑點（adhesive dot）：藉由雷射誘導前向轉移（LIFT）將一黏合劑材料之複數個微滴噴射至該介電基板上，其中固定該晶粒之步驟包含將該晶粒放置於該等黏合劑點上。
  11. 如請求項1所述之方法，其中該晶粒具有相對之一上部側及一下部側，其中該下部側固定至該介電基板，且其中該方法包含：在該晶粒被固定至該介電基板之後，藉由雷射誘導前向轉移（LIFT）將一黏合劑材料之複數個微滴噴射至該晶粒之該上部側上。
  12. 如請求項1所述之方法，其中該導電走線係印刷於該介電基板上之一軌跡（locus）上，在固定該晶粒之前，沿該軌跡不存在導電材料。
  13. 如請求項12所述之方法，其中印刷該導電走線之步驟包含：自動感測該等整體式觸點中該至少其中之一的一位置，並因應於自動感測到之該位置而印刷該導電走線。
  14. 如請求項1所述之方法，其中該介電基板包含一撓性箔（flexible foil）。
  15. 如請求項14所述之方法，其中該撓性箔包含選自由以下組成之一材料群組之一材料：聚合物、紙張及織物。
  16. 一種用於生產電子裝置之系統，該系統包含： 一放置站（placement station），用以將一晶粒固定至一介電基板，該晶粒包含具有複數個整體式觸點之一電子元件；以及 一印刷站（printing station），用以在該介電基板上及已固定至該基板之該晶粒之至少其中之一該等整體式觸點上印刷一導電走線，以在該基板上之該導電走線與該電子元件之間形成一歐姆連接。
  17. 如請求項16所述之系統，其中該印刷站用以藉由將一導電材料之複數個微滴噴射至該介電基板上及該至少其中之一該等整體式觸點中上來印刷該導電走線。
  18. 如請求項17所述之系統，其中該印刷站包含一雷射，該雷射用以發出一脈衝雷射光束以照射於包含該導電材料之一供體膜上，藉此藉由雷射誘導前向轉移（LIFT）噴射該等微滴。
  19. 如請求項18所述之系統，其中該印刷站用以將該脈衝雷射光束引導成使該等微滴係相對於該介電基板之一表面以一斜角朝該晶粒噴射。
  20. 如請求項18所述之系統，其中該印刷站包含複數個光學裝置（optics），該等光學裝置用以引導該脈衝雷射光束照射於一第一供體膜上以在該介電基板上沿該導電走線之一軌道形成一黏附層，並接著引導該脈衝雷射光束照射於一第二供體膜上以在該黏附層上積增該導電走線，該第一供體膜包含具有一第一熔化溫度之一第一金屬，該第二供體膜包含具有一第二熔化溫度之一第二金屬，該第二熔化溫度高於該第一熔化溫度。
  21. 如請求項17所述之系統，其中該晶粒具有相對之一上部側及一下部側，其中該下部側固定至該介電基板，且其中上面印刷有該導電走線之該等整體式觸點中該至少其中之一係位於該上部側上。
  22. 如請求項21所述之系統，其中該印刷站用以在該電子元件旁邊自該介電基板至該等整體式觸點中該至少其中之一由所噴射之該等微滴積增一柱。
  23. 如請求項17所述之系統，其中該晶粒具有相對之一上部側及一下部側，在該上部側與該下部側之間具有複數個橫向側，其中該下部側固定至該介電基板，且其中上面印刷有該導電走線之該等整體式觸點中該至少其中之一係位於該等橫向側其中之一上。
  24. 如請求項17所述之系統，包含一表面準備站（surface preparation station），該表面準備站用以在噴射該等微滴之前於該基板中形成一孔陣列，以抑制該等微滴自該介電基板反衝。
  25. 如請求項16所述之系統，其中該印刷站用以藉由以下在該介電基板上印刷複數個黏合劑點：藉由雷射誘導前向轉移（LIFT）將一黏合劑材料之複數個微滴噴射至該介電基板上，且其中該放置站用以將該晶粒放置於該等黏合劑點上。
  26. 如請求項16所述之系統，其中該晶粒具有相對之一上部側及一下部側，其中該下部側固定至該介電基板，且其中該印刷站用以在該晶粒被固定至該介電基板之後，藉由雷射誘導前向轉移（LIFT）將一黏合劑材料之複數個微滴噴射至該晶粒之該上部側上。
  27. 如請求項16所述之系統，其中該導電走線係印刷於該介電基板上之一軌跡（locus）上，在固定該晶粒之前，沿該軌跡不存在導電材料。
  28. 如請求項27所述之系統，包含一感測器，該感測器用以自動感測該等整體式觸點中該至少其中之一的一位置，其中該印刷站用以因應於自動感測到之該位置而印刷該導電走線。
  29. 如請求項16所述之系統，其中該介電基板包含一撓性箔。
  30. 如請求項29所述之系統，其中該撓性箔包含選自由以下組成之一材料群組之一材料：聚合物、紙張、及織物。
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WO2018216002A1 (en) 2018-11-29
CN110637354B (zh) 2024-03-08
KR20200010208A (ko) 2020-01-30
JP2020521331A (ja) 2020-07-16
US11881466B2 (en) 2024-01-23
CN110637354A (zh) 2019-12-31

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