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TW201833182A - Photosensitive resin composition, cured film, laminate, method for producing cured film, method for producing laminate, and semiconductor device - Google Patents

Photosensitive resin composition, cured film, laminate, method for producing cured film, method for producing laminate, and semiconductor device Download PDF

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TW201833182A
TW201833182A TW106145443A TW106145443A TW201833182A TW 201833182 A TW201833182 A TW 201833182A TW 106145443 A TW106145443 A TW 106145443A TW 106145443 A TW106145443 A TW 106145443A TW 201833182 A TW201833182 A TW 201833182A
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group
formula
resin composition
photosensitive resin
compound
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TW106145443A
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TWI751252B (en
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岩井悠
渋谷明規
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日商富士軟片股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/088Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/34Layered products comprising a layer of synthetic resin comprising polyamides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

Provided are the following: a photosensitive resin composition with which a pattern can be formed by means of photo-radical polymerization, and with which a cured film exhibiting high breaking elongation cane be obtained; a cured film; a laminate; a method for producing a cured film; a method for producing a laminate; and a semiconductor device. The photosensitive resin composition contains: a polyimide precursor containing a repeating unit represented by formula (1); and a photo-radical polymerization initiator. In formula (1), A1 and A2 each denote an oxygen atom or NH, R111 denotes a divalent organic group, R115 denotes a tetravalent organic group, and R113 and R114 each denote a hydrogen atom or a monovalent organic group. A group represented by formula (2) is bonded to a terminal of at least one of R111, R113, R114 and R115. In formula (2), R1 denotes a hydrogen atom or a substituent group, and * denotes the bonding position to R111, R113, R114 or R115.

Description

感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體裝置Photosensitive resin composition, cured film, laminated body, method for producing cured film, method for producing laminated body, and semiconductor device

本發明有關一種感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體裝置。The present invention relates to a photosensitive resin composition, a cured film, a laminate, a method for producing a cured film, a method for producing a laminate, and a semiconductor device.

以往,半導體元件的保護膜及層間絕緣膜使用了同時具有優異的耐熱性、電特性、機械特性等之聚醯亞胺樹脂。但是,近年來,隨著半導體元件的高集成化、大型化的發展,要求密封樹脂封裝的薄型化、小型化,且採用使用了LOC(晶片引線)或回焊法之表面貼裝等方式。Conventionally, a protective film and an interlayer insulating film of a semiconductor element have used a polyimide resin having excellent heat resistance, electrical properties, mechanical properties, and the like. However, in recent years, with the development of high integration and large-scale semiconductor devices, it is required to reduce the thickness and size of the sealing resin package, and to use surface mounting using LOC (wafer lead) or reflow soldering.

該種半導體元件的製作中,使用了對聚醯亞胺樹脂本身賦予了感光性之感光性聚醯亞胺樹脂組成物。其原因為藉由使用感光性聚醯亞胺樹脂組成物,能夠將圖案形成製程簡單化。例如,專利文獻1中揭示了一種樹脂組成物,其包含具有規定的結構之聚醯亞胺前驅物、(b)藉由光化射線照射而產生自由基之化合物、(c)由下述通式(4a)或(4b)表示之化合物及(d)溶劑。 [化學式1](通式(4a)中,n為3以下的整數。通式(4b)中,R101 及R102 各自獨立地為氫原子或1價基團。m為9以下的整數。)In the production of such a semiconductor element, a photosensitive polyimide composition having a photosensitive property imparted to the polyimide resin itself is used. The reason for this is that the pattern forming process can be simplified by using a photosensitive polyimide resin composition. For example, Patent Document 1 discloses a resin composition comprising a polyimide precursor having a predetermined structure, (b) a compound which generates a radical by irradiation with actinic rays, and (c) a compound represented by the formula (4a) or (4b) and (d) a solvent. [Chemical Formula 1] (In the formula (4a), n is an integer of 3 or less. In the formula (4b), R 101 and R 102 each independently represent a hydrogen atom or a monovalent group. m is an integer of 9 or less.)

另一方面,專利文獻2中揭示了一種樹脂組成物,其含有具有乙炔基之化合物和環氧化合物。 [先前技術文獻] [專利文獻]On the other hand, Patent Document 2 discloses a resin composition containing a compound having an ethynyl group and an epoxy compound. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2014-201695號公報 [專利文獻2]日本特開2010-077192號公報[Patent Document 1] JP-A-2014-201695 (Patent Document 2) JP-A-2010-077192

對上述專利文獻1進行研究之結果,得知專利文獻1中所記載之使樹脂組成物硬化而成之硬化膜的斷裂伸長率不夠充分。又,專利文獻2中未記載關於對聚醯亞胺前驅物進行光自由基聚合之內容,無法進行圖案形成。 本發明係以解決上述課題為目的者,其目的在於提供一種能夠藉由光自由基聚合來形成圖案,且所得到之硬化膜的斷裂伸長率高之感光性樹脂組成物、以及硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體裝置。As a result of examining the above-mentioned Patent Document 1, it was found that the elongation at break of the cured film obtained by curing the resin composition described in Patent Document 1 is insufficient. Further, Patent Document 2 does not describe the content of photoradical polymerization of a polyimide precursor, and it is impossible to form a pattern. The present invention has an object of solving the above problems, and an object of the invention is to provide a photosensitive resin composition capable of forming a pattern by photo-radical polymerization and having a high elongation at break of a cured film obtained, and a cured film and a laminate. A method for producing a body, a cured film, a method for producing a laminate, and a semiconductor device.

基於上述課題,本發明人進行深入研究之結果,發現能夠提供一種於藉由自由基聚合而硬化之體系中,藉由使用後述之具備具有由式(2)表示之碳-碳三鍵之基團之聚醯亞胺前驅物,能夠進行圖案形成,且所得到之硬化膜的斷裂伸長率高之感光性樹脂組成物。 具體而言,藉由下述機構<1>,較佳為藉由<2>至<25>解決了上述課題。 <1>一種感光性樹脂組成物,其含有包含由下述式(1)表示之重複單元之聚醯亞胺前驅物及光自由基聚合起始劑; 式(1) [化學式2]式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基,R115 表示4價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基;其中,R111 、R113 、R114 及R115 中的至少一個的末端中鍵結有由下述式(2)表示之基團; 式(2) [化學式3]式(2)中,R1 表示氫原子或取代基,*為與R111 、R113 、R114 或R115 的鍵結部位。 <2>如<1>所述之感光性樹脂組成物,其中 上述聚醯亞胺前驅物具有源自由下述式(3)表示之化合物的結構; 式(3) [化學式4]式(3)中,A表示(p+q)價基團;R1 表示氫原子或取代基;p表示1~5的整數;q表示2以上的整數。 <3>如<1>所述之感光性樹脂組成物,其中 上述聚醯亞胺前驅物具有源自由下述式(3a)表示之化合物的結構; 式(3a) [化學式5]式(3a)中,A0 表示(l+m)價基團;A1 表示單鍵或(n+l)價基團;R1 表示氫原子或取代基;Ar表示(a+1)價芳香族烴基或芳香族雜環基;a、l、m及n分別獨立地表示1~5的整數;其中,m及n中的至少一個表示2以上的整數。 <4>如<1>所述之感光性樹脂組成物,其中 上述聚醯亞胺前驅物具有源自由下述式(3b)表示之化合物的結構; 式(3b) [化學式6]式(3b)中,A0 表示(l+m)價基團;R1 表示氫原子或取代基;a、l、m及n分別獨立地表示1~5的整數;其中,m及n中的至少一個表示2以上的整數。 <5>如<1>至<4>中任一項所述之感光性樹脂組成物,其中 上述式(1)中,至少於R111 的末端鍵結有由式(2)表示之基團。 <6>如<1>至<5>中任一項所述之感光性樹脂組成物,其中 上述聚醯亞胺前驅物還包含由式(1-1)表示之重複單元; 式(1-1) [化學式7]式(1-1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基,R115 表示4價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基;其中,由式(1-1)表示之重複單元不包含由上述式(2)表示之基團。 <7>如<6>所述之感光性樹脂組成物,其中 上述式(1-1)中的R111 由-Ar-L-Ar-表示,其中,Ar分別獨立地為芳香族烴基,L為可以被氟原子取代之碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2 -或-NHCO-以及包含上述的兩個以上的組合之基團。 <8>如<6>所述之感光性樹脂組成物,其中 上述式(1-1)中的R111 為由下述式(51)或式(61)表示之基團; 式(51) [化學式8]式(51)中,R10 ~R17 分別獨立地為氫原子、氟原子或1價有機基,R10 ~R17 中的至少一個為氟原子、甲基、氟甲基、二氟甲基或三氟甲基; 式(61) [化學式9]式(61)中,R18 及R19 分別獨立地為氟原子、氟甲基、二氟甲基或三氟甲基。 <9>如<1>至<8>中任一項所述之感光性樹脂組成物,其中 上述R113 及R114 中的至少一個包含自由基聚合性基。 <10>如<1>至<9>中任一項所述之感光性樹脂組成物,其中 上述R115 為包含芳香環之4價有機基。 <11>如<1>至<10>中任一項所述之感光性樹脂組成物,其還包含自由基聚合性化合物。 <12>如<1>至<11>中任一項所述之感光性樹脂組成物,其還包含鹼產生劑。 <13>如<1>至<12>中任一項所述之感光性樹脂組成物,其還包含溶劑。 <14>如<1>至<13>中任一項所述之感光性樹脂組成物,其使用於負型顯影。 <15>如<1>至<14>中任一項所述之感光性樹脂組成物,其使用於再配線層用層間絕緣膜的形成。 <16>一種硬化膜,將<1>至<15>中任一項所述之感光性樹脂組成物硬化而成。 <17>一種積層體,其具有兩層以上的<16>所述之硬化膜。 <18>如<17>所述之積層體,其中 於上述硬化膜之間具有金屬層。 <19>一種硬化膜的製造方法,其包含使用<1>至<15>中任一項所述之感光性樹脂組成物之情況。 <20>如<19>所述之硬化膜的製造方法,其具有: 感光性樹脂組成物層形成製程,將上述感光性樹脂組成物應用於基板而使其成為層狀; 曝光製程,對上述感光性樹脂組成物層進行曝光;及 顯影處理製程,對經上述曝光之感光性樹脂組成物層進行顯影處理。 <21>如<20>所述之硬化膜的製造方法,其中 上述顯影處理為負型顯影處理。 <22>如<20>或<21>所述之硬化膜的製造方法,其包含於上述顯影處理製程之後,於50~450℃的溫度下對經顯影之感光性樹脂組成物層進行加熱之製程。 <23>如<19>至<22>中任一項所述之硬化膜的製造方法,其中 上述硬化膜的膜厚係1~30μm。 <24>一種積層體的製造方法,依據<19>至<23>中任一項所述之硬化膜的製造方法,形成硬化膜之後,進而再次將上述感光性樹脂組成物層形成製程、上述曝光製程及上述顯影處理製程依次進行2~5次。 <25>一種半導體裝置,其具有<16>所述之硬化膜或<17>或<18>所述之積層體。 [發明效果]As a result of intensive studies, the present inventors have found that it is possible to provide a system having a carbon-carbon triple bond represented by the formula (2) by using a system which is hardened by radical polymerization. The polyimine precursor of the group is a photosensitive resin composition capable of pattern formation and having a high elongation at break of the obtained cured film. Specifically, the above problem is solved by <2> to <25> by the following mechanism <1>. <1> A photosensitive resin composition containing a polyimine precursor comprising a repeating unit represented by the following formula (1) and a photoradical polymerization initiator; Formula (1) [Chemical Formula 2] In the formula (1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or a monovalent group. An organic group; wherein a terminal represented by the following formula (2) is bonded to a terminal of at least one of R 111 , R 113 , R 114 and R 115 ; Formula (2) [Chemical Formula 3] In the formula (2), R 1 represents a hydrogen atom or a substituent, and * is a bonding site with R 111 , R 113 , R 114 or R 115 . <2> The photosensitive resin composition according to <1>, wherein the polyimine precursor has a structure derived from a compound represented by the following formula (3); Formula (3) [Chemical Formula 4] In the formula (3), A represents a (p+q) valent group; R 1 represents a hydrogen atom or a substituent; p represents an integer of 1 to 5; and q represents an integer of 2 or more. <3> The photosensitive resin composition according to <1>, wherein the polyimine precursor has a structure derived from a compound represented by the following formula (3a); Formula (3a) [Chemical Formula 5] In the formula (3a), A 0 represents a (l+m) valent group; A 1 represents a single bond or an (n+1) valent group; R 1 represents a hydrogen atom or a substituent; and Ar represents a (a+1) valence. The aromatic hydrocarbon group or the aromatic heterocyclic group; a, 1, m and n each independently represent an integer of 1 to 5; wherein at least one of m and n represents an integer of 2 or more. <4> The photosensitive resin composition according to <1>, wherein the polyimine precursor has a structure derived from a compound represented by the following formula (3b); Formula (3b) [Chemical Formula 6] In the formula (3b), A 0 represents a (l+m) valent group; R 1 represents a hydrogen atom or a substituent; and a, l, m and n each independently represent an integer of 1 to 5; wherein, m and n are At least one of them represents an integer of 2 or more. The photosensitive resin composition according to any one of the above-mentioned formula (1), wherein a group represented by the formula (2) is bonded to at least a terminal of the R 111 . The photosensitive resin composition according to any one of <1>, wherein the polyimine precursor further comprises a repeating unit represented by the formula (1-1); 1) [Chemical Formula 7] In the formula (1-1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or A monovalent organic group; wherein the repeating unit represented by the formula (1-1) does not contain a group represented by the above formula (2). <7> The photosensitive resin composition according to <6>, wherein R 111 in the above formula (1-1) is represented by -Ar-L-Ar-, wherein each of Ar is independently an aromatic hydrocarbon group, L It is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S-, -SO 2 - or -NHCO-, and a group containing a combination of two or more of the above. <8> The photosensitive resin composition of the above formula (1-1), wherein R 111 in the above formula (1-1) is a group represented by the following formula (51) or (61); [Chemical Formula 8] In the formula (51), R 10 to R 17 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 10 to R 17 is a fluorine atom, a methyl group, a fluoromethyl group or a difluoromethyl group. Or trifluoromethyl; formula (61) [chemical formula 9] In the formula (61), R 18 and R 19 each independently represent a fluorine atom, a fluoromethyl group, a difluoromethyl group or a trifluoromethyl group. The photosensitive resin composition as described in any one of the above-mentioned <1>, wherein at least one of R 113 and R 114 contains a radical polymerizable group. The photosensitive resin composition of any one of the above-mentioned <1>, wherein R 115 is a tetravalent organic group containing an aromatic ring. The photosensitive resin composition as described in any one of <1> which further contains a radically polymerizable compound. The photosensitive resin composition of any one of <1> to <11> which further contains an alkali generator. The photosensitive resin composition according to any one of <1> to <12> which further contains a solvent. <14> The photosensitive resin composition as described in any one of <1> to <13> which is used for negative development. The photosensitive resin composition as described in any one of <1> to <14> is used for formation of the interlayer insulating film for a rewiring layer. <16> A cured film composition obtained by curing the photosensitive resin composition according to any one of <1> to <15>. <17> A laminate having two or more cured films of <16>. <18> The laminate according to <17>, wherein a metal layer is provided between the cured films. <19> A method for producing a cured film, which comprises the use of the photosensitive resin composition according to any one of <1> to <15>. <20> The method for producing a cured film according to <19>, comprising: a process for forming a photosensitive resin composition layer, applying the photosensitive resin composition to a substrate to form a layer; and exposing the above process The photosensitive resin composition layer is subjected to exposure; and a development processing process is performed to develop the photosensitive resin composition layer exposed as described above. <21> The method for producing a cured film according to <20>, wherein the development treatment is a negative development treatment. <22> The method for producing a cured film according to <20>, wherein the developed photosensitive resin composition layer is heated at a temperature of 50 to 450 ° C after the development treatment process. Process. The method for producing a cured film according to any one of the above aspects, wherein the cured film has a thickness of 1 to 30 μm. In the method for producing a cured film according to any one of the aspects of the present invention, the method for producing a cured film according to any one of the items of the present invention, wherein after the cured film is formed, the photosensitive resin composition layer is further formed into a process, The exposure process and the above development process are sequentially performed 2 to 5 times. <25> A semiconductor device comprising the cured film according to <16> or the laminate according to <17> or <18>. [Effect of the invention]

藉由本發明,能夠提供一種能夠藉由光自由基聚合而形成圖案,且所得到之硬化膜的斷裂伸長率高之感光性樹脂組成物、以及硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體裝置。According to the present invention, it is possible to provide a photosensitive resin composition capable of forming a pattern by photo-radical polymerization, and having a high elongation at break of the obtained cured film, and a method for producing a cured film, a laminate, a cured film, and a laminate Body manufacturing method and semiconductor device.

以下所記載之本發明中的構成要件的說明有時基於本發明的代表性實施形態而進行,但本發明並不限定於該種實施形態。 關於本說明書中的基團(原子團)的標記,未記錄經取代及未經取代之標記係同時包含不具有取代基者和具有取代基者。例如,“烷基”係不僅包含不具有取代基之烷基(未經取代之烷基),還包含具有取代基之烷基(取代烷基)者。 本說明書中“曝光”只要無特別限定,除了利用光的曝光以外,利用電子束、離子束等粒子束之描繪亦包含於曝光中。又,作為使用於曝光之光,通常可列舉以水銀燈的明線光譜、準分子雷射為代表之遠紫外線、極紫外線(EUV光)、X射線、電子束等光化射線或放射線。 本說明書中,利用“~”表示之數值範圍是指將記載於“~”前後之數值作為下限值及上限值而包含之範圍。 本說明書中,“(甲基)丙烯酸酯”表示“丙烯酸酯”及“甲基丙烯酸酯”這兩者或其中任一個,“(甲基)丙烯酸”表示“丙烯酸”及“甲基丙烯酸”這兩者或其中任一個,“(甲基)丙烯醯基”表示“丙烯醯基”及“甲基丙烯醯基”這兩者或其中任一個。 本說明書中,“製程”這一術語,不僅是獨立的製程,而且即使於無法與其他製程明確區分之情況下,若可實現對該製程所預期之作用,則亦包含於本術語中。 本說明書中,固體成分濃度是指相對於組成物的總質量之除了溶劑以外的成分的質量百分率。又,只要沒有特別記載,則固體成分濃度是指25℃下的濃度。 本說明書中,只要沒有特別記載,則重量平均分子量(Mw)及數平均分子量(Mn)基於凝膠滲透色譜法(GPC測定),並作為苯乙烯換算值而定義。本說明書中,重量平均分子量(Mw)及數平均分子量(Mn)例如能夠利用HLC-8220(TOSOH CORPORATION製),並作為管柱而使用保護管柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000、TSKgel Super HZ2000(TOSOH CORPORATION製)而求出。只要沒有特別記載,則將洗提液設為利用THF(四氫呋喃)進行測定者。又,只要沒有特別記載,則將檢測設為使用了UV線(紫外線)的波長254nm檢測器者。The description of the constituent elements of the present invention described below may be performed based on representative embodiments of the present invention, but the present invention is not limited to the embodiments. Regarding the labeling of the group (atomic group) in the present specification, the unsubstituted and unsubstituted labeling group is not included, and includes those having no substituent and having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). In the present specification, the "exposure" is not particularly limited, and in addition to exposure by light, the drawing by a particle beam such as an electron beam or an ion beam is also included in the exposure. In addition, as the light to be used for exposure, an actinic ray or a radiation such as a far-line ultraviolet ray, an extreme ultraviolet ray (EUV light), an X-ray, or an electron beam typified by a bright line spectrum of a mercury lamp or an excimer laser is generally used. In the present specification, the numerical range expressed by "~" means a range including the numerical values described before and after "~" as the lower limit and the upper limit. In the present specification, "(meth) acrylate" means either or both of "acrylate" and "methacrylate", and "(meth)acrylic" means "acrylic" and "methacrylic". "either or both of them, "(meth)acrylylene" means either or both of "acryloyl" and "methacryl". In this specification, the term "process" is not only an independent process, but is also included in the term if the effect expected for the process can be achieved even if it cannot be clearly distinguished from other processes. In the present specification, the solid content concentration means the mass percentage of the components other than the solvent with respect to the total mass of the composition. Further, the solid content concentration means a concentration at 25 ° C unless otherwise specified. In the present specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are defined by gel permeation chromatography (GPC measurement), and are defined as styrene equivalent values unless otherwise specified. In the present specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) can be, for example, HLC-8220 (manufactured by TOSOH CORPORATION), and the protective column HZ-L, TSKgel Super HZM-M, TSKgel Super can be used as a column. HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION) were obtained. Unless otherwise specified, the eluent is measured by THF (tetrahydrofuran). Further, unless otherwise specified, the detector is a wavelength 254 nm detector using UV rays (ultraviolet rays).

<感光性樹脂組成物> 本發明的感光性樹脂組成物(以下,有時簡稱為“本發明的組成物”)的特徵為含有包含由下述式(1)表示之重複單元之聚醯亞胺前驅物及光自由基聚合起始劑。藉由設為該種結構,能夠藉由光自由基聚合來形成圖案,並能夠得到斷裂伸長率高之硬化膜。 進而,當積層多層由本發明的組成物形成之樹脂層時,層間的黏附性會成為問題。具體而言,於樹脂層與樹脂層的黏附性的基礎上,當於樹脂層與樹脂層之間設置金屬層時,還要求樹脂層與金屬層的黏附性。本發明中,藉由使聚醯亞胺前驅物與由式(2)表示之基團鍵結,還能夠提高該些層間的黏附性。該機理雖未推測,但推測其原因為由式(2)表示之基團於曝光之後被消耗之情況亦較少,且多層積層之情形的曝光時或熱硬化時提高了層間中的反應性。 進而,當將感光性樹脂組成物使用於多層積層體的樹脂層的形成中時,期望上述感光性樹脂組成物的曝光寬容度寬,但本發明的感光性樹脂組成物還能夠增加曝光寬容度。 式(1) [化學式10]式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基,R115 表示4價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基;其中,R111 、R113 、R114 及R115 中的至少一個的末端中鍵結有由下述式(2)表示之基團; 式(2) [化學式11]式(2)中,R1 表示氫原子或取代基,*為與R111 、R113 、R114 或R115 的鍵結部位。<Photosensitive Resin Composition> The photosensitive resin composition of the present invention (hereinafter sometimes simply referred to as "the composition of the present invention") is characterized by containing a polyfluorene comprising a repeating unit represented by the following formula (1) Amine precursor and photoradical polymerization initiator. By adopting such a structure, a pattern can be formed by photo-radical polymerization, and a cured film having a high elongation at break can be obtained. Further, when a plurality of layers of the resin layer formed of the composition of the present invention are laminated, the adhesion between the layers becomes a problem. Specifically, in addition to the adhesion between the resin layer and the resin layer, when a metal layer is provided between the resin layer and the resin layer, the adhesion between the resin layer and the metal layer is also required. In the present invention, the adhesion between the layers can be improved by bonding the polyimide precursor to the group represented by the formula (2). Although this mechanism is not presumed, it is presumed that the reason is that the group represented by the formula (2) is consumed after exposure, and the reactivity in the interlayer is improved at the time of exposure or thermal hardening in the case of multi-layer lamination. . Further, when the photosensitive resin composition is used in the formation of the resin layer of the multilayer laminate, it is desirable that the photosensitive resin composition has a wide exposure latitude, but the photosensitive resin composition of the present invention can also increase the exposure latitude. . Formula (1) [Chemical Formula 10] In the formula (1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or a monovalent group. An organic group; wherein a terminal represented by the following formula (2) is bonded to a terminal of at least one of R 111 , R 113 , R 114 and R 115 ; Formula (2) [Chemical Formula 11] In the formula (2), R 1 represents a hydrogen atom or a substituent, and * is a bonding site with R 111 , R 113 , R 114 or R 115 .

<<聚醯亞胺前驅物>> 本發明中所使用之聚醯亞胺前驅物包含由式(1)表示之重複單元。進而,還可以包含除了由式(1)表示之重複單元以外的重複單元。以下,對該些的內容進行詳細說明。<<Polyimine precursor>> The polyimine precursor used in the present invention contains a repeating unit represented by the formula (1). Further, a repeating unit other than the repeating unit represented by the formula (1) may be further included. Hereinafter, the contents of these will be described in detail.

<<<由式(1)表示之重複單元>>> 本發明中所使用之聚醯亞胺前驅物包含由式(1)表示之重複單元。 式(1) [化學式12]式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基,R115 表示4價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基;其中,R111 、R113 、R114 及R115 中的至少一個的末端中鍵結有由下述式(2)表示之基團; 式(2) [化學式13]式(2)中,R1 表示氫原子或取代基,*為與R111 、R113 、R114 或R115 的鍵結部位。<<<Repeating unit represented by the formula (1)>>> The polyimine precursor used in the present invention contains a repeating unit represented by the formula (1). Formula (1) [Chemical Formula 12] In the formula (1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or a monovalent group. An organic group; wherein a terminal represented by the following formula (2) is bonded to a terminal of at least one of R 111 , R 113 , R 114 and R 115 ; Formula (2) [Chemical Formula 13] In the formula (2), R 1 represents a hydrogen atom or a substituent, and * is a bonding site with R 111 , R 113 , R 114 or R 115 .

其中,“R111 、R113 、R114 及R115 中的至少一個的末端中鍵結有由下述式(2)表示之基團”是指,不是如所謂的連結基那樣包含於R111 等基團的內部,而是R113 和/或R114 本身係由式(2)表示之基團,或者構成R111 、R113 、R114 及R115 之氫原子的至少一個被由式(2)表示之基團取代之情況。 本發明中,R111 、R113 、R114 及R115 中,至少於R111 的末端鍵結有由式(2)表示之基團為較佳。 又,還例示R111 、R113 、R114 及R115 中,至少於R113 及R114 中的一個的末端鍵結有由式(2)表示之基團之態樣。本形態中,於R113 及R114 中的另一個的末端鍵結有由式(2)表示之基團,或者包含自由基聚合性基為較佳。 進而,還例示R111 、R113 、R114 及R115 中,至少於R115 的末端鍵結有由式(2)表示之基團之態樣。本形態中,R115 為具有取代基之芳香族烴基,上述芳香族烴基的取代基係由式(2)表示之基團本身,或者上述芳香族烴基的取代基進而被由式(2)表示之基團取代為較佳。 本發明中,於一個由式(1)表示之重複單元中包含1~5個由式(2)表示之基團為較佳,包含1~3個為更佳,包含一個或兩個為進一步較佳。Here, "the group represented by the following formula (2) is bonded to the terminal of at least one of R 111 , R 113 , R 114 and R 115 " means that it is not contained in R 111 as in the case of a so-called linking group. The interior of the group, but R 113 and/or R 114 itself is a group represented by the formula (2), or at least one of the hydrogen atoms constituting R 111 , R 113 , R 114 and R 115 is 2) The case where the indicated group is replaced. In the present invention, among R 111 , R 113 , R 114 and R 115 , a group represented by the formula (2) is preferably bonded to at least the terminal of R 111 . Further, in the examples of R 111 , R 113 , R 114 and R 115 , at least one of R 113 and R 114 is bonded to the terminal group represented by the formula (2). In the present embodiment, a group represented by the formula (2) or a radical polymerizable group is preferably bonded to the terminal of the other of R 113 and R 114 . Further, in the case of R 111 , R 113 , R 114 and R 115 , at least the group represented by the formula (2) is bonded to the end of R 115 . In the present embodiment, R 115 is an aromatic hydrocarbon group having a substituent, and the substituent of the aromatic hydrocarbon group is a group represented by the formula (2) itself, or a substituent of the aromatic hydrocarbon group is further represented by the formula (2) Substituting for the group is preferred. In the present invention, it is preferred to include 1 to 5 groups represented by the formula (2) in a repeating unit represented by the formula (1), preferably 1 to 3, more preferably one or two. Preferably.

R1 表示氫原子或取代基,氫原子、烷基或芳基為較佳,氫原子或烷基為更佳,氫原子為進一步較佳。 當R1 為取代基時,例示下述取代基T,且係式量(每1莫耳的上述取代基部分的質量、單位g)為15~300的取代基為較佳,係式量為15~100的取代基為更佳。上述取代基僅由選自碳原子、氧原子、氫原子、硫原子及氮原子中之原子構成為較佳。R 1 represents a hydrogen atom or a substituent, a hydrogen atom, an alkyl group or an aryl group is preferred, a hydrogen atom or an alkyl group is more preferred, and a hydrogen atom is further preferred. When R 1 is a substituent, the following substituent T is exemplified, and a substituent amount (the mass per unit of the substituent portion per unit g, unit g) of 15 to 300 is preferable, and the amount of the formula is A substituent of 15 to 100 is more preferable. The above substituent is preferably composed only of an atom selected from a carbon atom, an oxygen atom, a hydrogen atom, a sulfur atom and a nitrogen atom.

(取代基T) 烷基(較佳為碳數1~30的烷基)、烯基(較佳為碳數2~30的烯基)、炔基(較佳為碳數2~30的炔基)、芳基(較佳為碳數6~30的芳基)、胺基(較佳為碳數0~30的胺基)、烷氧基(較佳為碳數1~30的烷氧基)、芳氧基(較佳為碳數6~30的芳氧基)、雜芳氧基、醯基(較佳為碳數1~30的醯基)、烷氧基羰基(較佳為碳數2~30的烷氧基羰基)、芳氧基羰基(較佳為碳數7~30的芳氧基羰基)、醯氧基(較佳為碳數2~30的醯氧基)、醯胺基(較佳為碳數2~30的醯胺基)、烷氧基羰基胺基(較佳為碳數2~30的烷氧基羰基胺基)、芳氧基羰基胺基(較佳為碳數7~30的芳氧基羰基胺基)、胺磺醯基(較佳為碳數0~30的胺磺醯基)、胺甲醯基(較佳為碳數1~30的胺甲醯基)、烷硫基(較佳為碳數1~30的烷硫基)、芳硫基(較佳為碳數6~30的芳硫基)、雜芳硫基(較佳為碳數1~30)、烷基磺醯基(較佳為碳數1~30)、芳基磺醯基(較佳為碳數6~30)、雜芳基磺醯基(較佳為碳數1~30)、烷基亞磺醯基(較佳為碳數1~30)、芳基亞磺醯基(較佳為碳數6~30)、雜芳基亞磺醯基(較佳為碳數1~30)、脲基(較佳為碳數1~30)、磷酸醯胺基(較佳為碳數1~30)、羥基、巰基、鹵素原子、氰基、烷基亞磺醯基、芳基亞磺醯基、肼基、亞胺基、雜芳基(較佳為碳數1~30)、四氫呋喃基。當該些基團為進而能夠取代之基團時,還可以具有取代基。作為取代基,可列舉於上述之取代基T中進行說明之基團。(Substituent T) an alkyl group (preferably an alkyl group having 1 to 30 carbon atoms), an alkenyl group (preferably an alkenyl group having 2 to 30 carbon atoms), an alkynyl group (preferably an alkyne having 2 to 30 carbon atoms) An aryl group (preferably an aryl group having 6 to 30 carbon atoms), an amine group (preferably an amino group having 0 to 30 carbon atoms), an alkoxy group (preferably an alkoxy group having 1 to 30 carbon atoms) a aryloxy group (preferably an aryloxy group having 6 to 30 carbon atoms), a heteroaryloxy group, a decyl group (preferably a fluorenyl group having 1 to 30 carbon atoms), an alkoxycarbonyl group (preferably An alkoxycarbonyl group having 2 to 30 carbon atoms, an aryloxycarbonyl group (preferably an aryloxycarbonyl group having 7 to 30 carbon atoms), a decyloxy group (preferably a decyloxy group having 2 to 30 carbon atoms), Amidino group (preferably a decylamino group having 2 to 30 carbon atoms), an alkoxycarbonylamino group (preferably an alkoxycarbonylamino group having 2 to 30 carbon atoms), or an aryloxycarbonylamino group (more) Preferably, it is an aryloxycarbonylamino group having 7 to 30 carbon atoms, an aminesulfonyl group (preferably an amidoxime group having a carbon number of 0 to 30), an amine formazan group (preferably having a carbon number of 1 to 30) An amidinoyl group, an alkylthio group (preferably an alkylthio group having 1 to 30 carbon atoms), an arylthio group (preferably an arylthio group having 6 to 30 carbon atoms), An arylthio group (preferably having a carbon number of 1 to 30), an alkylsulfonyl group (preferably having a carbon number of 1 to 30), an arylsulfonyl group (preferably having a carbon number of 6 to 30), and a heteroarylsulfonyl group. Sulfhydryl group (preferably having a carbon number of 1 to 30), alkylsulfinyl group (preferably having a carbon number of 1 to 30), arylsulfinyl group (preferably having a carbon number of 6 to 30), and a heteroaryl group. a sulfinyl group (preferably having a carbon number of 1 to 30), a urea group (preferably having a carbon number of 1 to 30), a guanidinium phosphate group (preferably having a carbon number of 1 to 30), a hydroxyl group, a mercapto group, a halogen atom, A cyano group, an alkylsulfinylene group, an arylsulfinyl group, a fluorenyl group, an imido group, a heteroaryl group (preferably having a carbon number of 1 to 30), or a tetrahydrofuranyl group. When the groups are groups which can be further substituted, they may have a substituent. The substituent which is described in the above-mentioned substituent T is mentioned as a substituent.

本發明中所使用之聚醯亞胺前驅物具有源自由下述式(3)表示之化合物的結構為較佳。 式(3) [化學式14]式(3)中,A表示(p+q)價基團;R1 表示氫原子或取代基;p表示1~5的整數,q表示2以上的整數。 由式(3)表示之化合物中,醯胺基的部分與作為聚醯亞胺前驅物的原料之羧酸或無水羧酸二酐反應,並被引入到聚醯亞胺前驅物中為較佳。具體而言,式(1)的NH-R111 -NH的部分源自由式(3)表示之化合物為較佳。The polyimine precursor used in the present invention preferably has a structure derived from a compound represented by the following formula (3). Formula (3) [Chemical Formula 14] In the formula (3), A represents a (p+q) valent group; R 1 represents a hydrogen atom or a substituent; p represents an integer of 1 to 5, and q represents an integer of 2 or more. In the compound represented by the formula (3), the guanamine group is reacted with a carboxylic acid or an anhydrous carboxylic dianhydride which is a raw material of the polyimide precursor, and is preferably introduced into the polyimide precursor. . Specifically, a part of the NH-R 111 -NH of the formula (1) is preferably a compound represented by the formula (3).

式(3)中,作為A所表示之(p+q)價基團,可列舉烴基、雜環基、-O-、-S-、-NR-、-CO-、-COO-、-OCO-、-SO2 -或包含它們的組合之基團。R表示氫原子、烷基或芳基,氫原子為較佳。 烴基可以係脂肪族烴基,亦可以係芳香族烴基。又,脂肪族烴基可以係環狀,亦可以係非環狀。又,脂肪族烴基可以係飽和脂肪族烴基,亦可以係不飽和脂肪族烴基。烴基可以具有取代基,亦可以不具有取代基。作為取代基,可列舉上述之取代基T。又,環狀脂肪族烴基及芳香族烴基可以係單環,亦可以係稠環,但單環為較佳。作為芳香族烴基,可列舉苯環基、萘環基、茚環基、茚滿環基、蒽環基、四氫化萘環基等。 雜環基可以係單環,亦可以係稠環。作為雜環基,5員環或6員環為較佳。雜環基可以係脂肪族雜環基,亦可以係芳香族雜環基。又,作為構成雜環基之雜原子,可列舉氮原子、氧原子、硫原子等。作為雜環基,可列舉呋喃環基、噻吩環基、吡咯環基、吡喃環基、噻喃環基、吡啶環基、噁唑環基、噻唑環基、咪唑環基、嘧啶環基、三嗪環基、吲哚環基、喹啉環基、嘌呤環基、苯并咪唑環基、苯并噻唑環基、喹喔啉環基及咔唑環基等。 作為(p+q)價基團的具體例,可列舉組合一個或兩個以上的下述結構單元而構成之基團(可以形成環結構)。R表示氫原子、烷基或芳基,氫原子為較佳。In the formula (3), examples of the (p+q) valent group represented by A include a hydrocarbon group, a heterocyclic group, -O-, -S-, -NR-, -CO-, -COO-, and -OCO. -, -SO 2 - or a group comprising a combination thereof. R represents a hydrogen atom, an alkyl group or an aryl group, and a hydrogen atom is preferred. The hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. Further, the aliphatic hydrocarbon group may be cyclic or non-cyclic. Further, the aliphatic hydrocarbon group may be a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group. The hydrocarbon group may or may not have a substituent. The substituent T mentioned above can be mentioned as a substituent. Further, the cyclic aliphatic hydrocarbon group and the aromatic hydrocarbon group may be a single ring or a fused ring, but a single ring is preferred. Examples of the aromatic hydrocarbon group include a benzene ring group, a naphthalene ring group, an anthracene ring group, an indanyl group, an anthracene group, and a tetrahydronaphthyl group. The heterocyclic group may be a single ring or a fused ring. As the heterocyclic group, a 5-membered ring or a 6-membered ring is preferred. The heterocyclic group may be an aliphatic heterocyclic group or an aromatic heterocyclic group. Further, examples of the hetero atom constituting the heterocyclic group include a nitrogen atom, an oxygen atom, and a sulfur atom. Examples of the heterocyclic group include a furanyl group, a thiophene ring group, a pyrrole ring group, a pyrancyclo group, a thiopyranyl group, a pyridine ring group, an oxazole ring group, a thiazole ring group, an imidazole ring group, a pyrimidine ring group, and the like. Triazine ring group, anthracene ring group, quinoline ring group, anthracene ring group, benzimidazole ring group, benzothiazole ring group, quinoxaline ring group and carbazole ring group. Specific examples of the (p+q) valent group include a group in which one or two or more of the following structural units are combined (a ring structure can be formed). R represents a hydrogen atom, an alkyl group or an aryl group, and a hydrogen atom is preferred.

[化學式15] [Chemical Formula 15]

A所表示之(p+q)價基團僅由選自碳原子、氧原子、氫原子、硫原子及氮原子中之原子構成,並且式量(每1莫耳的A部分的質量、單位g)係30~900為較佳,50~600為更佳。The (p+q) valence group represented by A is composed only of atoms selected from a carbon atom, an oxygen atom, a hydrogen atom, a sulfur atom, and a nitrogen atom, and the formula (the mass per unit of the A moiety per unit) g) is preferably from 30 to 900, more preferably from 50 to 600.

式(3)中,p表示1~5的整數。q表示2以上的整數。 p係1~4的整數為較佳,1~3的整數為更佳,1或2為進一步較佳,1為進一步較佳。 q係2~4的整數為較佳,2或3為更佳,2為進一步較佳。 當p係2以上時,存在複數個之R1 可以分別相同,亦可以不同。In the formula (3), p represents an integer of 1 to 5. q represents an integer of 2 or more. An integer of p to 1 to 4 is preferable, an integer of 1 to 3 is more preferable, 1 or 2 is further more preferable, and 1 is further more preferable. An integer of 2 to 4 is preferred, 2 or 3 is more preferred, and 2 is further preferred. When the p system is 2 or more, a plurality of R 1 may be the same or different.

式(3)中,R1 表示氫原子或取代基。式(3)中的R1 的較佳範圍與式(2)中的R1 相同。In the formula (3), R 1 represents a hydrogen atom or a substituent. Same as R (2) is R (3) in the preferred range of formula 1 formula 1.

本發明中,聚醯亞胺前驅物具有源自由下述式(3a)表示之化合物的結構為更佳。亦即,由式(3)表示之化合物由式(3a)表示為更佳。 式(3a) [化學式16]式(3a)中,A0 表示(l+m)價基團;A1 表示單鍵或(n+l)價基團;R1 表示氫原子或取代基;Ar表示(a+1)價芳香族烴基或芳香族雜環基;a、l、m及n分別獨立地表示1~5的整數;其中,m及n中的至少一個表示2以上的整數。In the present invention, the polyimine precursor has a structure in which the compound represented by the following formula (3a) is more preferable. That is, the compound represented by the formula (3) is more preferably represented by the formula (3a). Formula (3a) [Chemical Formula 16] In the formula (3a), A 0 represents a (l+m) valent group; A 1 represents a single bond or an (n+1) valent group; R 1 represents a hydrogen atom or a substituent; and Ar represents a (a+1) valence. The aromatic hydrocarbon group or the aromatic heterocyclic group; a, 1, m and n each independently represent an integer of 1 to 5; wherein at least one of m and n represents an integer of 2 or more.

式(3a)中,作為A0 所表示之(l+m)價基團,可列舉烴基、雜環基、-O-、-S-、-NR-、-CO-、-COO-、-OCO-、-SO2 -或包含它們的組合之基團,-O-、-S-、-NR-、-CO-、-COO-、-OCO-、-SO2 -或包含它們的組合之基團為更佳,-NH-、-CO-或包含它們的組合之基團為進一步較佳。R表示氫原子、烷基或芳基,氫原子為較佳。 關於烴基、雜環基的詳細內容,與於上述之A所表示之(p+q)價基團中進行說明之範圍相同,較佳範圍亦相同。In the formula (3a), as the (l+m) valent group represented by A 0 , a hydrocarbon group, a heterocyclic group, -O-, -S-, -NR-, -CO-, -COO-, - may be mentioned. OCO-, -SO 2 - or a group comprising a combination thereof, -O-, -S-, -NR-, -CO-, -COO-, -OCO-, -SO 2 - or a combination thereof The group is more preferably, and -NH-, -CO- or a group containing a combination thereof is further preferred. R represents a hydrogen atom, an alkyl group or an aryl group, and a hydrogen atom is preferred. The details of the hydrocarbon group and the heterocyclic group are the same as those described for the (p+q) valence group represented by the above A, and the preferred ranges are also the same.

式(3a)中,作為A1 所表示之(n+1)價基團,可列舉烴基、雜環基、-O-、-S-、-NR-、-CO-、-COO-、-OCO-、-SO2 -或包含它們的組合之基團。R表示氫原子、烷基或芳基,氫原子為較佳。關於烴基、雜環基的詳細內容,與於上述之A所表示之(p+q)價基團中進行說明之範圍相同。作為A1 所表示之(n+1)價基團,係烴基或雜環基為較佳,係烴基為更佳,係芳香族烴基為進一步較佳,係苯環基為進一步較佳。In the formula (3a), examples of the (n+1)-valent group represented by A 1 include a hydrocarbon group, a heterocyclic group, -O-, -S-, -NR-, -CO-, -COO-, - OCO -, - SO 2 - or a group of a combination thereof. R represents a hydrogen atom, an alkyl group or an aryl group, and a hydrogen atom is preferred. The details of the hydrocarbon group and the heterocyclic group are the same as those described for the (p+q) valence group represented by the above A. The (n+1)-valent group represented by A 1 is preferably a hydrocarbon group or a heterocyclic group, more preferably a hydrocarbon group, more preferably an aromatic hydrocarbon group, and a benzene ring group is further preferred.

式(3)中,R1 表示氫原子或取代基。式(3)中的R1 的較佳範圍與式(2)中的R1 相同。In the formula (3), R 1 represents a hydrogen atom or a substituent. Same as R (2) is R (3) in the preferred range of formula 1 formula 1.

式(3a)中,Ar係(a+1)價芳香族烴基為較佳,苯環基為更佳。In the formula (3a), an Ar-based (a+1)-valent aromatic hydrocarbon group is preferred, and a benzene ring group is more preferred.

式(3a)中,a、l、m及n分別獨立地表示1~5的整數。其中,m及n中的至少一個表示2以上的整數。當l、m分別為2以上時,存在複數個之R1 、Ar及A1 分別獨立地可以相同,亦可以不同。In the formula (3a), a, l, m and n each independently represent an integer of 1 to 5. Here, at least one of m and n represents an integer of 2 or more. When l and m are each 2 or more, a plurality of R 1 , Ar and A 1 may be independently the same or different.

a係1~4為較佳,1~3為更佳,1或2為進一步較佳,1為進一步較佳。 l係1~4為較佳,1~3為更佳,1或2為進一步較佳,1為進一步較佳。 m係1~4為較佳,1~3為更佳,1或2為進一步較佳,1為進一步較佳。 n係1~4為較佳,2~4為更佳,2或3為進一步較佳,2為進一步較佳。 又,(l+m)係2~6為較佳,2~5為進一步較佳,2或3為進一步較佳,2為特佳。A is preferably 1 to 4, more preferably 1 to 3, further preferably 1 or 2, and further preferably 1 is further preferred. l is preferably 1 to 4, more preferably 1 to 3, further preferably 1 or 2, and further preferably 1 is further preferred. The m-systems 1 to 4 are preferred, the 1-3 is more preferred, the 1 or 2 is further preferred, and the 1 is further preferred. n is preferably 1 to 4, more preferably 2 to 4, further preferably 2 or 3, and further preferably 2. Further, (l+m) is preferably 2 to 6, 2 to 5 is further more preferred, 2 or 3 is further preferred, and 2 is particularly preferred.

本發明中,聚醯亞胺前驅物具有源自由下述式(3b)表示之化合物的結構為進一步較佳。亦即,由式(3)表示之化合物由式(3b)表示為進一步較佳。 式(3b) [化學式17]式(3b)中,A0 表示(l+m)價基團;R1 表示氫原子或取代基;a、l、m及n分別獨立地表示1~5的整數;其中,m及n中的至少一個表示2以上的整數。 式(3b)中,A0 、R1 、a、l、m及n分別獨立地與式(3a)中的A0 、R1 、a、l、m及n定義相同,較佳範圍亦相同。In the present invention, the structure in which the polyimine precursor has a compound represented by the following formula (3b) is further preferable. That is, the compound represented by the formula (3) is further preferably represented by the formula (3b). Formula (3b) [Chemical Formula 17] In the formula (3b), A 0 represents a (l+m) valent group; R 1 represents a hydrogen atom or a substituent; and a, l, m and n each independently represent an integer of 1 to 5; wherein, m and n are At least one of them represents an integer of 2 or more. In the formula (3b), A 0 , R 1 , a, l, m and n are each independently defined as A 0 , R 1 , a, l, m and n in the formula (3a), and the preferred range is also the same. .

以下,例示本發明中所使用之由式(3)表示之化合物。當然,本發明並不限定於該些。 [化學式18] Hereinafter, the compound represented by the formula (3) used in the present invention is exemplified. Of course, the invention is not limited to these. [Chemical Formula 18]

[化學式19] [Chemical Formula 19]

[化學式20] [Chemical Formula 20]

[化學式21] [Chemical Formula 21]

式(1)中的A1 及A2 分別獨立地表示氧原子或NH,氧原子為較佳。 式(1)中的R111 表示2價有機基。作為2價有機基,例示包含直鏈或分支的脂肪族基、環狀脂肪族基及芳香族烴基之基團,碳數2~20的直鏈脂肪族基、碳數3~20的分支脂肪族基、碳數3~20的環狀脂肪族基、碳數6~20的芳香族烴基或包含它們的組合之基團為較佳,包含碳數6~20的芳香族烴基之基團為更佳。A 1 and A 2 in the formula (1) each independently represent an oxygen atom or NH, and an oxygen atom is preferred. R 111 in the formula (1) represents a divalent organic group. Examples of the divalent organic group include a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic hydrocarbon group, a linear aliphatic group having 2 to 20 carbon atoms, and a branched fatty group having 3 to 20 carbon atoms. a group, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic hydrocarbon group having 6 to 20 carbon atoms, or a group containing a combination thereof, is preferable, and a group containing an aromatic hydrocarbon group having 6 to 20 carbon atoms is Better.

R111 由二胺衍生為較佳。作為使用於聚醯亞胺前驅物的製造中之二胺,可列舉直鏈或分支脂肪族、環狀脂肪族或芳香族二胺等。二胺可以僅使用一種,亦可以使用兩種以上。二胺係由式(3)表示之化合物為較佳。 當R111 並不源自由式(3)表示之化合物時,R111 與後述之由式(1-1)表示之重複單元中的R111 相同,較佳範圍亦相同。R 111 is preferably derived from a diamine. Examples of the diamine used in the production of the polyimide precursor are linear or branched aliphatic, cyclic aliphatic or aromatic diamine. The diamine may be used singly or in combination of two or more. The diamine is preferably a compound represented by the formula (3). When R 111 is not derived from the compound represented by the formula (3), R 111 is the same as R 111 in the repeating unit represented by the formula (1-1) described later, and the preferred range is also the same.

式(1)中的R115 表示4價有機基,作為4價有機基,包含芳香環之4價有機基為較佳,由下述式(5)或式(6)表示之基團為更佳。 式(5) [化學式22]式(5)中,R112 係單鍵或選自可以被氟原子取代之碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2 -、-NHCO-及它們的組合中之基團為較佳,單鍵、選自可以被氟原子取代之碳數1~3的伸烷基、-O-、-CO-、-S-及-SO2 -中之基團為更佳,選自包括-CH2 -、-C(CF32 -、-C(CH32 -、-O-、-CO-、-S-及-SO2 -之組中之2價基團為進一步較佳。R 115 in the formula (1) represents a tetravalent organic group, and as the tetravalent organic group, a tetravalent organic group containing an aromatic ring is preferred, and a group represented by the following formula (5) or formula (6) is more good. Formula (5) [Chemical Formula 22] In the formula (5), R 112 is a single bond or an aliphatic hydrocarbon group selected from a carbon number of 1 to 10 which may be substituted by a fluorine atom, -O-, -CO-, -S-, -SO 2 -, -NHCO- And a group thereof, preferably a single bond selected from alkyl groups having 1 to 3 carbon atoms which may be substituted by fluorine atoms, -O-, -CO-, -S- and -SO 2 - More preferably, the group is selected from the group consisting of -CH 2 -, -C(CF 3 ) 2 -, -C(CH 3 ) 2 -, -O-, -CO-, -S- and -SO 2 - The divalent group in the group is further preferred.

式(6) [化學式23] Formula (6) [Chemical Formula 23]

關於由式(1)中的R115 表示之4價有機基,具體而言,可列舉從四羧酸二酐去除酸二酐基之後殘存之四羧酸殘基等。四羧酸二酐可以僅使用一種,亦可以使用兩種以上。四羧酸二酐係由下述式(O)表示之化合物為較佳。 式(O) [化學式24]式(O)中,R115 表示4價有機基。R115 與式(1)的R115 的定義相同。Specific examples of the tetravalent organic group represented by R 115 in the formula (1) include a tetracarboxylic acid residue remaining after removing the acid dianhydride group from the tetracarboxylic dianhydride. The tetracarboxylic dianhydride may be used singly or in combination of two or more. The tetracarboxylic dianhydride is preferably a compound represented by the following formula (O). Formula (O) [Chemical Formula 24] In the formula (O), R 115 represents a tetravalent organic group. R 115 is the same as defined for R 115 of the formula (1).

作為四羧酸二酐的具體例,例示選自均苯四甲酸二酐(PMDA)、3,3’,4,4’-聯苯四羧酸二酐、3,3’,4,4’-二苯硫醚四羧酸二酐、3,3’,4,4’-二苯基碸四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、3,3’,4,4’-二苯基甲烷四羧酸二酐、2,2’,3,3’-二苯基甲烷四羧酸二酐、2,3,3’,4’-聯苯四羧酸二酐、2,3,3’,4’-二苯甲酮四羧酸二酐、4,4’-氧代二鄰苯二甲酸二酐、2,3,6,7-萘四羧酸二酐、1,4,5,7-萘四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、1,3-二苯基六氟丙烷-3,3,4,4-四羧酸二酐、1,4,5,6-萘四羧酸二酐、2,2’,3,3’-二苯基四羧酸二酐、3,4,9,10-苝四羧酸二酐、1,2,4,5-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、1,8,9,10-菲四羧酸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,3,4-苯四羧酸二酐及它們的碳數1~6的烷基衍生物和/或碳數1~6的烷氧基衍生物中之至少一種。Specific examples of the tetracarboxylic dianhydride are exemplified by pyromellitic dianhydride (PMDA), 3,3', 4,4'-biphenyltetracarboxylic dianhydride, and 3,3',4,4'. -diphenyl sulfide tetracarboxylic dianhydride, 3,3',4,4'-diphenylphosphonium tetracarboxylic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride , 3,3',4,4'-diphenylmethanetetracarboxylic dianhydride, 2,2',3,3'-diphenylmethanetetracarboxylic dianhydride, 2,3,3',4' -biphenyltetracarboxylic dianhydride, 2,3,3',4'-benzophenonetetracarboxylic dianhydride, 4,4'-oxodiphthalic dianhydride, 2,3,6, 7-naphthalenetetracarboxylic dianhydride, 1,4,5,7-naphthalenetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis (2) , 3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane-3,3,4, 4-tetracarboxylic dianhydride, 1,4,5,6-naphthalenetetracarboxylic dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 3,4,9,10- Terpene tetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,8,9,10-phenanthrenetetracarboxylic acid Anhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane Anhydride, pyromellitic dianhydride and derivatives thereof alkyl having 1 to 6 and / or alkoxy having 1 to 6 derivative of at least one.

又,作為較佳例還可列舉下述中所示出之四羧酸二酐(DAA-1)~(DAA-5)。 [化學式25] Further, preferred examples thereof include tetracarboxylic dianhydrides (DAA-1) to (DAA-5) shown below. [Chemical Formula 25]

式(1)中,R113 及R114 分別獨立地表示氫原子或1價有機基,R113 及R114 的至少一個包含自由基聚合性基為較佳,兩種均包含自由基聚合性基為較佳。自由基聚合性基係藉由自由基的作用而能夠進行交聯反應之基團,作為較佳的例,可列舉具有烯屬不飽和鍵之基團。 作為具有烯屬不飽和鍵之基團,可列舉乙烯基、(甲基)烯丙基、由下述式(III)表示之基團等。In the formula (1), R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group, and at least one of R 113 and R 114 preferably contains a radical polymerizable group, and both of them contain a radical polymerizable group. It is better. The radically polymerizable group is a group capable of undergoing a crosslinking reaction by the action of a radical, and a preferred example thereof is a group having an ethylenically unsaturated bond. Examples of the group having an ethylenically unsaturated bond include a vinyl group, a (meth)allyl group, and a group represented by the following formula (III).

[化學式26] [Chemical Formula 26]

式(III)中,R200 表示氫原子或甲基,甲基為更佳。 式(III)中,R201 為連結基,-CH2 -、-O-、-CO-或包含它們的組合之基團為較佳。In the formula (III), R 200 represents a hydrogen atom or a methyl group, and a methyl group is more preferable. In the formula (III), R 201 is a linking group, and -CH 2 -, -O-, -CO- or a group containing a combination thereof is preferred.

從針對水性顯影液的溶解度的觀點考慮,R113 或R114 可以係除了氫原子或自由基聚合性基以外的1價有機基。關於除了自由基聚合性基以外的1價有機基,能夠參閱日本特開2016-027357號公報的0087段的記載,並將該些內容編入本說明書中。From the viewpoint of solubility for an aqueous developing solution, R 113 or R 114 may be a monovalent organic group other than a hydrogen atom or a radical polymerizable group. For the monovalent organic group other than the radical polymerizable group, the description of paragraph 0087 of JP-A-2016-027357 can be referred to, and the contents are incorporated in the present specification.

又,聚醯亞胺前驅物於結構單元中具有氟原子亦為較佳。聚醯亞胺前驅物中的氟原子含量係10質量%以上為較佳,20質量%以下為較佳。Further, it is also preferred that the polyimine precursor has a fluorine atom in the structural unit. The content of the fluorine atom in the polyimide precursor is preferably 10% by mass or more, and preferably 20% by mass or less.

又,以提高與基板的黏合性為目的,可以與具有矽氧烷結構之脂肪族基共聚合。具體而言,作為二胺成分,可列舉雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等。Further, for the purpose of improving the adhesion to the substrate, it is possible to copolymerize with an aliphatic group having a siloxane structure. Specific examples of the diamine component include bis(3-aminopropyl)tetramethyldioxane and bis(p-aminophenyl)octamethylpentaoxane.

由式(1)表示之重複單元係由式(1-A)表示之重複單元為較佳。亦即,本發明中所使用之聚醯亞胺前驅物的至少一種係具有由式(1-A)表示之重複單元之前驅物為較佳。藉由設為該種結構,能夠進一步擴大曝光寬容度的幅度。 式(1-A) [化學式27]式(1-A)中,A1 及A2 表示氧原子,R111 及R112 分別獨立地表示2價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基,R113 及R114 的至少一個係包含聚合性基之基團,聚合性基為較佳。其中,R111 、R113 、R114 及R112 中的至少一個的末端中鍵結有由上述式(2)表示之基團。The repeating unit represented by the formula (1) is preferably a repeating unit represented by the formula (1-A). That is, at least one of the polyimine precursors used in the present invention has a repeating unit precursor represented by the formula (1-A). By setting it as such a structure, the magnitude|size of exposure latitude can further expand. Formula (1-A) [Chemical Formula 27] In the formula (1-A), A 1 and A 2 each represent an oxygen atom, R 111 and R 112 each independently represent a divalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group, and R 113 And at least one of R 114 contains a group of a polymerizable group, and a polymerizable group is preferred. Here, a group represented by the above formula (2) is bonded to the terminal of at least one of R 111 , R 113 , R 114 and R 112 .

A1 、A2 、R111 、R113 及R114 分別獨立地與式(1)中的A1 、A2 、R111 、R113 及R114 定義相同,較佳範圍亦相同。R112 與式(5)中的R112 定義相同,較佳範圍亦相同。A 1 , A 2 , R 111 , R 113 and R 114 are each independently the same as defined for A 1 , A 2 , R 111 , R 113 and R 114 in the formula (1), and the preferred ranges are also the same. It defined the same as R 112 (5) and in formula R 112, preferred ranges are also the same.

聚醯亞胺前驅物可以僅包含一種由式(1)表示之重複結構單元,亦可以包含兩種以上。又,可以包含由式(1)表示之重複單元的結構異構體。The polyimine precursor may contain only one repeating structural unit represented by the formula (1), or may contain two or more kinds. Further, a structural isomer of a repeating unit represented by the formula (1) may be contained.

<<<其他重複單元>>> 本發明中所使用之聚醯亞胺前驅物可以包含除了由式(1)表示之重複單元以外的重複單元,包含除了由式(1)表示之重複單元以外的重複單元為較佳,包含由式(1-1)表示之重複單元為進一步較佳。 式(1-1) [化學式28]式(1-1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基,R115 表示4價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基;其中,由式(1-1)表示之重複單元不包含由上述式(2)表示之基團。<<<Other Repeating Units>>> The polyimine precursor used in the present invention may contain a repeating unit other than the repeating unit represented by the formula (1), and includes a repeating unit other than the formula (1) The repeating unit is preferred, and the repeating unit represented by the formula (1-1) is further preferred. Formula (1-1) [Chemical Formula 28] In the formula (1-1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or A monovalent organic group; wherein the repeating unit represented by the formula (1-1) does not contain a group represented by the above formula (2).

式(1-1)中的A1 、A2 、R115 、R113 及R114 分別獨立地與式(1)中的A1 、A2 、R115 、R113 及R114 定義相同,較佳範圍亦相同。當本發明中所使用之聚醯亞胺前驅物具有由式(1)表示之重複單元和由式(1-1)表示之重複單元時,式(1)中的A1 、A2 、R115 、R113 及R114 與式(1-1)中的A1 、A2 、R115 、R113 及R114 可以相同,亦可以不同,相同為較佳。 A 1, A 2, R 115 , R 113 and R 114 in formula (1-1) each independently have the formula A 1, A 2, the same as R 115, R 113 and R 114 defined in (1), more The range is also the same. When the polyimine precursor used in the present invention has a repeating unit represented by the formula (1) and a repeating unit represented by the formula (1-1), A 1 , A 2 , R in the formula (1) 115 , R 113 and R 114 may be the same as or different from A 1 , A 2 , R 115 , R 113 and R 114 in the formula (1-1).

式(1-1)中的R111 表示2價有機基。作為2價有機基,例示包含直鏈或分支的脂肪族基、環狀脂肪族基及芳香族烴基之基團,碳數2~20的直鏈脂肪族基、碳數3~20的分支脂肪族基、碳數3~20的環狀脂肪族基、碳數6~20的芳香族烴基或包含它們的組合之基團為較佳,包含碳數6~20的芳香族烴基之基團為更佳。R 111 in the formula (1-1) represents a divalent organic group. Examples of the divalent organic group include a linear or branched aliphatic group, a cyclic aliphatic group, and an aromatic hydrocarbon group, a linear aliphatic group having 2 to 20 carbon atoms, and a branched fatty group having 3 to 20 carbon atoms. a group, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic hydrocarbon group having 6 to 20 carbon atoms, or a group containing a combination thereof, is preferable, and a group containing an aromatic hydrocarbon group having 6 to 20 carbon atoms is Better.

R111 由二胺衍生為較佳。作為使用於聚醯亞胺前驅物的製造中之二胺,可列舉直鏈或分支的脂肪族、環狀脂肪族或芳香族二胺等。二胺可以僅使用一種,亦可以使用兩種以上。 具體而言,含有碳數2~20的直鏈或分支的脂肪族基、碳數3~20的環狀脂肪族基、碳數6~20的芳香族烴基或包含它們的組合之基團之二胺為較佳,含有包含碳數6~20的芳香族烴基之基團之二胺為更佳。作為芳香族烴基的例,可列舉下述者。R 111 is preferably derived from a diamine. Examples of the diamine used in the production of the polyimide precursor include a linear or branched aliphatic, cyclic aliphatic or aromatic diamine. The diamine may be used singly or in combination of two or more. Specifically, it contains a linear or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic hydrocarbon group having 6 to 20 carbon atoms, or a group containing a combination thereof. A diamine is preferable, and a diamine containing a group having an aromatic hydrocarbon group of 6 to 20 carbon atoms is more preferable. Examples of the aromatic hydrocarbon group include the following.

[化學式29]式中,A係單鍵或選自可以被氟原子取代之碳數1~10的脂肪族烴基、-O-、-C(=O)-、-S-、-S(=O)2 -、-NHCO-及它們的組合中之基團為較佳,單鍵、選自可以被氟原子取代之碳數1~3的伸烷基、-O-、-C(=O)-、-S-、-SO2 -中之基團為更佳,選自包括-CH2 -、-O-、-S-、-SO2 -、-C(CF32 -及-C(CH32 -之組中之2價基團為進一步較佳。[Chemical Formula 29] Wherein A is a single bond or an aliphatic hydrocarbon group selected from carbon atoms of 1 to 10 which may be substituted by a fluorine atom, -O-, -C(=O)-, -S-, -S(=O) 2 - Preferred groups in the group -NHCO- and combinations thereof are a single bond selected from an alkyl group having 1 to 3 carbon atoms which may be substituted by a fluorine atom, -O-, -C(=O)-, - The group in S-, -SO 2 - is more preferably selected from the group consisting of -CH 2 -, -O-, -S-, -SO 2 -, -C(CF 3 ) 2 - and -C(CH 3 The divalent group in the group of 2 - is further preferred.

作為二胺,具體而言,能夠參閱日本特開2016-027357號公報的0083段的記載,並將該些內容編入本說明書中。Specific examples of the diamines can be referred to in paragraph 0003 of JP-A-2016-027357, and the contents are incorporated in the present specification.

又,下述中所示之二胺(DA-1)~(DA-18)亦為較佳。Further, diamines (DA-1) to (DA-18) shown below are also preferred.

[化學式30] [Chemical Formula 30]

[化學式31] [Chemical Formula 31]

又,作為較佳之例還可列舉於主鏈具有至少兩個以上的伸烷基二醇單元之二胺。較佳為於一分子中合計包含兩個以上的乙二醇鏈、丙二醇鏈中的任一個或這兩者之二胺,更佳為不包含芳香環之二胺。作為具體例,可列舉JEFFAMINE(註冊商標)KH-511、JEFFAMINE(註冊商標)ED-600、JEFFAMINE(註冊商標)ED-900、JEFFAMINE(註冊商標)ED-2003、JEFFAMINE(註冊商標)EDR-148、JEFFAMINE(註冊商標)EDR-176、JEFFAMINE(註冊商標)D-200、JEFFAMINE(註冊商標)D-400、JEFFAMINE(註冊商標)D-2000、JEFFAMINE(註冊商標)D-4000(以上為商品名、HUNTSMAN INTERNATIONAL LLC.製)、1-(2-(2-(2-胺基丙氧基)乙氧基)丙氧基)丙烷-2-胺基、1-(1-(1-(2-胺基丙氧基)丙烷-2-基)氧基)丙烷-2-胺基等,但並不限定於該些。 以下示出JEFFAMINE(註冊商標)KH-511、JEFFAMINE(註冊商標)ED-600、JEFFAMINE(註冊商標)ED-900、JEFFAMINE(註冊商標)ED-2003、JEFFAMINE(註冊商標)EDR-148、JEFFAMINE(註冊商標)EDR-176的結構。Further, as a preferred example, a diamine having at least two or more alkylene glycol units in the main chain may be mentioned. It is preferably a diamine containing a total of two or more ethylene glycol chains and propylene glycol chains in one molecule, and more preferably a diamine containing no aromatic ring. Specific examples include JEFFAMINE (registered trademark) KH-511, JEFFAMINE (registered trademark) ED-600, JEFFAMINE (registered trademark) ED-900, JEFFAMINE (registered trademark) ED-2003, and JEFFAMINE (registered trademark) EDR-148. JEFFAMINE (registered trademark) EDR-176, JEFFAMINE (registered trademark) D-200, JEFFAMINE (registered trademark) D-400, JEFFAMINE (registered trademark) D-2000, JEFFAMINE (registered trademark) D-4000 (above is the trade name) , manufactured by HUNTSMAN INTERNATIONAL LLC., 1-(2-(2-(2-aminopropoxy)ethoxy)propoxy)propan-2-yl, 1-(1-(1-(2) -Aminopropoxy)propan-2-yl)oxy)propan-2-amine group, etc., but is not limited thereto. The following shows JEFFAMINE (registered trademark) KH-511, JEFFAMINE (registered trademark) ED-600, JEFFAMINE (registered trademark) ED-900, JEFFAMINE (registered trademark) ED-2003, JEFFAMINE (registered trademark) EDR-148, JEFFAMINE ( Registered trademark) Structure of EDR-176.

[化學式32] [Chemical Formula 32]

上述中,x、y、z為平均值。In the above, x, y, and z are average values.

從所得到之硬化膜的柔軟性的觀點考慮,式(1-1)中的R111 由-Ar-L-Ar-表示為較佳。其中,Ar分別獨立地為芳香族烴基,L為包含可以被氟原子取代之碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2 -或-NHCO-、以及包含上述中的兩個以上的組合之基團。Ar係伸苯基為較佳,L係可以被氟原子取代之碳數1或2的脂肪族烴基、-O-、-CO-、-S-或-SO2 -為進一步較佳。其中,脂肪族烴基係伸烷基為較佳。From the viewpoint of the flexibility of the obtained cured film, R 111 in the formula (1-1) is preferably represented by -Ar-L-Ar-. Wherein Ar is independently an aromatic hydrocarbon group, and L is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S-, -SO 2 - or -NHCO- And a group comprising a combination of two or more of the above. The Ar-based phenyl group is preferred, and the L-based aliphatic hydrocarbon group having 1 or 2 carbon atoms, -O-, -CO-, -S- or -SO 2 -, which may be substituted by a fluorine atom, is further preferred. Among them, an aliphatic hydrocarbon group alkylene group is preferred.

從i射線透過率的觀點考慮,式(1-1)中的R111 係由下述式(51)或式(61)表示之基團為較佳。尤其,從i射線透過率、易獲得性的觀點考慮,由式(61)表示之基團為更佳。 式(51) [化學式33]式(51)中,R10 ~R17 分別獨立地為氫原子、氟原子或1價有機基,R10 ~R17 中的至少一個為氟原子、甲基、氟甲基、二氟甲基或三氟甲基。 作為R10 ~R17 的1價有機基,可列舉碳數1~10(較佳為碳數1~6)的未取代的烷基、碳數1~10(較佳為碳數1~6)的氟化烷基等。 式(61) [化學式34]式(61)中,R18 及R19 分別獨立地為氟原子、氟甲基、二氟甲基或三氟甲基。 作為賦予式(51)或(61)的結構之二胺化合物,可列舉二甲基-4,4’-二胺基聯苯、2,2’-雙(三氟甲基)-4,4’-二胺基聯苯、2,2’-雙(氟)-4,4’-二胺基聯苯、4,4’-二胺基八氟聯苯等。該些可以使用一種或組合使用兩種以上。From the viewpoint of the i-ray transmittance, R 111 in the formula (1-1) is preferably a group represented by the following formula (51) or (61). In particular, the group represented by the formula (61) is more preferable from the viewpoint of i-ray transmittance and availability. Formula (51) [Chemical Formula 33] In the formula (51), R 10 to R 17 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 10 to R 17 is a fluorine atom, a methyl group, a fluoromethyl group or a difluoromethyl group. Or trifluoromethyl. Examples of the monovalent organic group of R 10 to R 17 include an unsubstituted alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms) and a carbon number of 1 to 10 (preferably, carbon numbers 1 to 6). a fluorinated alkyl group or the like. Formula (61) [Chemical Formula 34] In the formula (61), R 18 and R 19 each independently represent a fluorine atom, a fluoromethyl group, a difluoromethyl group or a trifluoromethyl group. Examples of the diamine compound which imparts a structure of the formula (51) or (61) include dimethyl-4,4'-diaminobiphenyl and 2,2'-bis(trifluoromethyl)-4,4. '-Diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, and the like. These may be used alone or in combination of two or more.

當聚醯亞胺前驅物包含由式(1-1)表示之重複結構單元時,可以僅包含一種由式(1-1)表示之重複結構單元,亦可以包含兩種以上。又,可以包含由式(1-1)表示之重複單元的結構異構體。When the polyimine precursor contains a repeating structural unit represented by the formula (1-1), it may contain only one repeating structural unit represented by the formula (1-1), or may contain two or more kinds. Further, a structural isomer of a repeating unit represented by the formula (1-1) may be contained.

作為本發明中的聚醯亞胺前驅物的一實施形態,例示包含由式(1)表示之重複單元與由式(1-1)表示之重複單元,由式(1)表示之重複單元與由式(1-1)表示之重複單元的合計較佳為佔總重複單元的80質量%以上,更佳為佔90質量%以上之情況。當本發明中所使用之聚醯亞胺前驅物包含由式(1)表示之重複單元與由式(1-1)表示之重複單元時,由式(1)表示之重複單元與由式(1-1)表示之重複單元的莫耳比係1:0.02~1:50為較佳,1:0.1~1:20為更佳。An embodiment of the polyimine precursor of the present invention includes a repeating unit represented by the formula (1) and a repeating unit represented by the formula (1-1), and the repeating unit represented by the formula (1) The total of the repeating units represented by the formula (1-1) is preferably 80% by mass or more, and more preferably 90% by mass or more based on the total repeating units. When the polyimine precursor used in the present invention contains a repeating unit represented by the formula (1) and a repeating unit represented by the formula (1-1), the repeating unit represented by the formula (1) and the formula (1) The molar ratio of the repeating unit represented by 1-1) is preferably from 0.02 to 1:50, more preferably from 1:0.1 to 1:20.

<<<聚醯亞胺前驅物的特性>>> 本發明中所使用之聚醯亞胺前驅物中,由式(2)表示之基團的量相對於聚醯亞胺前驅物1g係0.05~5.0mmol為較佳,0.1~2.5mmol為更佳。 又,本發明中,感光性樹脂組成物中所含有之自由基聚合性基的數量與由式(2)表示之基團的數量之比係自由基聚合性基的數量:由式(2)表示之基團的數量=1:0.05~2.0為較佳,1:0.1~1.0為更佳。 聚醯亞胺前驅物的重量平均分子量(Mw)較佳為2000~500000,更佳為5000~100000,進一步較佳為10000~50000。又,數平均分子量(Mn)較佳為800~250000,更佳為2000~50000,進一步較佳為4000~25000。 分散度係1.5~2.5為較佳。<<<Characteristics of Polyimine Precursor>>> In the polyimine precursor used in the present invention, the amount of the group represented by the formula (2) is 0.05 with respect to the polyamidene precursor 1 g. It is preferably 5.05.0 mmol, more preferably 0.1 to 2.5 mmol. In the present invention, the ratio of the number of radical polymerizable groups contained in the photosensitive resin composition to the number of groups represented by the formula (2) is the number of radical polymerizable groups: from the formula (2) The number of groups indicated is preferably from 1:0.05 to 2.0, more preferably from 1:0.1 to 1.0. The weight average molecular weight (Mw) of the polyimide precursor is preferably from 2,000 to 500,000, more preferably from 5,000 to 100,000, still more preferably from 10,000 to 50,000. Further, the number average molecular weight (Mn) is preferably from 800 to 250,000, more preferably from 2,000 to 50,000, still more preferably from 4,000 to 25,000. The degree of dispersion is preferably from 1.5 to 2.5.

以下,示出本發明中能夠使用之聚醯亞胺前驅物的具體例。當然,本發明並不限定於該些。當下述中所示之聚醯亞胺前驅物為共聚物時,於1:0.02~50的範圍適當設定左側的重複單元與右側的重複單元的莫耳比。 [化學式35] Specific examples of the polyimide intermediate precursor which can be used in the present invention are shown below. Of course, the invention is not limited to these. When the polyimine precursor shown below is a copolymer, the molar ratio of the repeating unit on the left side and the repeating unit on the right side is appropriately set in the range of 1:0.02 to 50. [Chemical Formula 35]

[化學式36] [Chemical Formula 36]

[化學式37] [Chemical Formula 37]

[化學式38] [Chemical Formula 38]

[化學式39] [Chemical Formula 39]

[化學式40] [Chemical Formula 40]

[化學式41] [Chemical Formula 41]

本發明的感光性樹脂組成物相對於組成物的總固體成分包含20~100質量%的聚醯亞胺前驅物為較佳,包含50~99質量%為更佳,包含60~98質量%為進一步較佳,包含70~95質量%為特佳。 聚醯亞胺前驅物可以僅包含一種,亦可以包含兩種以上。當包含兩種以上時,合計量成為上述範圍為較佳。The photosensitive resin composition of the present invention preferably contains 20 to 100% by mass of a polyimine precursor, and more preferably 50 to 99% by mass, and more preferably 60 to 98% by mass, based on the total solid content of the composition. More preferably, it is particularly preferably contained in an amount of 70 to 95% by mass. The polyimine precursor may be contained alone or in combination of two or more. When two or more types are contained, the total amount is preferably in the above range.

<<<聚醯亞胺前驅物的製造>>> 聚醯亞胺前驅物可藉由使二羧酸或二羧酸衍生物與二胺反應而得到。較佳為使用鹵化劑對二羧酸或二羧酸衍生物進行鹵化之後,使其與二胺反應而得到。 聚醯亞胺前驅物的製造方法中,反應時,使用有機溶劑為較佳。有機溶劑可以係一種,亦可以係兩種以上。 作為有機溶劑,能夠依原料適當設定,例示吡啶、二乙二醇二甲醚(二甘二甲醚)、N-甲基吡咯烷酮及N-乙基吡咯烷酮。<<<Production of Polyimine Precursor>>> The polyimine precursor can be obtained by reacting a dicarboxylic acid or a dicarboxylic acid derivative with a diamine. It is preferably obtained by halogenating a dicarboxylic acid or a dicarboxylic acid derivative with a halogenating agent and then reacting it with a diamine. In the method for producing a polyimide precursor, it is preferred to use an organic solvent in the reaction. The organic solvent may be one type or two or more types. The organic solvent can be appropriately set depending on the raw material, and examples thereof include pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone, and N-ethylpyrrolidone.

製造聚醯亞胺前驅物時,為了進一步提高保存穩定性,用酸二酐、單羧酸、單醯氯化合物、單活性酯化合物等封端劑封閉為較佳。該些中,使用單胺為更佳,作為單胺的較佳的化合物,可列舉苯胺、2-乙炔基苯胺、3-乙炔基苯胺、4-乙炔基苯胺、5-胺基-8-羥基喹啉、1-羥基-7-胺基萘、1-羥基-6-胺基萘、1-羥基-5-胺基萘、1-羥基-4-胺基萘、2-羥基-7-胺基萘、2-羥基-6-胺基萘、2-羥基-5-胺基萘、1-羧基-7-胺基萘、1-羧基-6-胺基萘、1-羧基-5-胺基萘、2-羧基-7-胺基萘、2-羧基-6-胺基萘、2-羧基-5-胺基萘、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、4-胺基水楊酸、5-胺基水楊酸、6-胺基水楊酸、2-胺基苯磺酸、3-胺基苯磺酸、4-胺基苯磺酸、3-胺基-4,6-二羥基嘧啶、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、2-胺基苯硫酚、3-胺基苯硫酚、4-胺基苯硫酚等。可以將該些使用兩種以上,亦可以藉由使複數個封端劑反應而導入複數個不同的末端基。In the case of producing a polyimide precursor, in order to further improve storage stability, it is preferably blocked with a blocking agent such as an acid dianhydride, a monocarboxylic acid, a monofluorene compound or a mono-active ester compound. Among these, a monoamine is more preferable, and preferred examples of the monoamine include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyl group. Quinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-amine Naphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-amine Naphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-amine Benzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonate Acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4 - Aminothiophenols and the like. These may be used in combination of two or more kinds, and a plurality of different terminal groups may be introduced by reacting a plurality of blocking agents.

製造聚醯亞胺前驅物時,可以包含析出固體之製程。具體而言,藉由使反應液中聚醯亞胺前驅物沉澱於水中,且溶解於四氫呋喃等可溶解聚醯亞胺前驅物之溶劑,能夠進行固體析出。 然後,對聚醯亞胺前驅物進行乾燥而能夠得到粉末狀聚醯亞胺前驅物。When the polyimine precursor is produced, a process for depositing a solid may be included. Specifically, solid precipitation can be carried out by precipitating the polyimine precursor in the reaction liquid in water and dissolving in a solvent such as tetrahydrofuran which can dissolve the polyimide precursor. Then, the polyimide precursor is dried to obtain a powdery polyimide intermediate.

<<光自由基聚合起始劑>> 本發明的組成物含有光自由基聚合起始劑。 作為能夠使用於本發明中的光自由基聚合起始劑,並無特別限制,能夠從公知的光自由基聚合起始劑中適當選擇。例如,對從紫外線區域至可見區域的光線具有感光性之光自由基聚合起始劑為較佳。又,可以係與光激發之增感劑產生一些作用,並生成活性自由基之活性劑。 光自由基聚合起始劑至少含有一種於約300~800nm(較佳為330~500nm)的範圍內至少具有約50莫耳吸光係數之化合物為較佳。化合物的莫耳吸光係數能夠利用公知的方法來進行測定。例如,藉由紫外可見分光光度計(Varian公司製Cary-5 spectrophotometer),並使用乙酸乙酯溶劑而於0.01g/L的濃度下進行測定為較佳。<<Photoradical polymerization initiator>> The composition of the present invention contains a photoradical polymerization initiator. The photoradical polymerization initiator which can be used in the present invention is not particularly limited, and can be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator which is photosensitive to light from the ultraviolet region to the visible region is preferred. Further, it is possible to produce some action with a photoexcited sensitizer and to generate an active radical active agent. The photoradical polymerization initiator preferably contains at least one compound having an absorption coefficient of at least about 50 moles in the range of about 300 to 800 nm, preferably 330 to 500 nm. The molar absorption coefficient of the compound can be measured by a known method. For example, it is preferred to carry out the measurement at a concentration of 0.01 g/L by an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian Co., Ltd.) using an ethyl acetate solvent.

本發明的組成物包含光自由基聚合起始劑,藉此將本發明的組成物應用於半導體晶圓等基板而形成感光性樹脂組成物層之後,藉由照射光而發生由自由基引起之硬化,從而能夠降低光照射部中的溶解性。因此,例如具有如下優點,亦即經由具有僅遮蔽電極部之圖案之光遮罩對感光性樹脂組成物層進行曝光,藉此依電極的圖案能夠簡單地製作溶解性不同之區域。The composition of the present invention contains a photoradical polymerization initiator, and the composition of the present invention is applied to a substrate such as a semiconductor wafer to form a photosensitive resin composition layer, and is caused by radicals by irradiation of light. It is hardened, so that the solubility in the light-irradiating portion can be lowered. Therefore, for example, it is advantageous in that the photosensitive resin composition layer is exposed through a light mask having a pattern of only the electrode portions, whereby regions having different solubility can be easily produced depending on the pattern of the electrodes.

作為光自由基聚合起始劑,能夠任意使用公知的化合物,例如,可列舉鹵化烴衍生物(例如具有三嗪骨架之化合物、具有噁二唑骨架之化合物、具有三鹵甲基之化合物等)、醯基氧化膦等醯基膦化合物、六芳基雙咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮化合物、茂金屬化合物、有機硼化合物、鐵芳烴錯合物等。關於該些的詳細內容,能夠參閱日本特開2016-027357號公報的0165~0182段的記載,並將該內容編入本說明書中。As a photoradical polymerization initiator, a known compound can be used arbitrarily, and examples thereof include a halogenated hydrocarbon derivative (for example, a compound having a triazine skeleton, a compound having a oxadiazole skeleton, a compound having a trihalomethyl group, etc.). a mercaptophosphine compound such as a mercaptophosphine oxide, an antimony compound such as a hexaarylbisimidazole or an anthracene derivative, an organic peroxide, a sulfur compound, a ketone compound, an aromatic onium salt, a ketoxime ether, or an aminoacetophenone compound. , hydroxyacetophenone, azo compound, azide compound, metallocene compound, organoboron compound, iron aromatic hydrocarbon complex, and the like. For the details of the above, the descriptions of paragraphs 0165 to 0182 of JP-A-2016-027357 can be referred to, and the contents are incorporated in the present specification.

作為酮化合物,例如,例示日本特開2015-087611號公報的0087段中所記載之化合物,並將該內容編入本說明書中。市售品中,還可適宜地使用KAYACURE DETX(Nippon Kayaku Co.,Ltd.製)。The ketone compound is, for example, a compound described in paragraph 0087 of JP-A-2015-087611, and the contents are incorporated in the present specification. In the commercial product, KAYACURE DETX (manufactured by Nippon Kayaku Co., Ltd.) can also be suitably used.

作為光自由基聚合起始劑,還能夠適宜地使用羥基苯乙酮化合物、胺基苯乙酮化合物及醯基膦化合物。更具體而言,例如,還能夠使用日本特開平10-291969號公報中所記載之胺基苯乙酮系起始劑、日本專利第4225898號中所記載之醯基氧化膦系起始劑。 作為羥基苯乙酮系起始劑,能夠使用IRGACURE 184(IRGACURE為註冊商標)、DAROCUR 1173、IRGACURE 500、IRGACURE-2959、IRGACURE 127(產品名:均為BASF公司製)。 作為胺基苯乙酮系起始劑,能夠使用作為市售品之IRGACURE 907、IRGACURE 369及IRGACURE 379(商品名:均為BASF公司製)。 作為胺基苯乙酮系起始劑,還能夠使用極大吸收波長與365nm或405nm等波長光源匹配之日本特開2009-191179號公報中所記載之化合物。 作為醯基膦系起始劑,可列舉2,4,6-三甲基苯甲醯基-二苯基-氧化膦等。又,能夠使用作為市售品之IRGACURE-819或IRGACURE-TPO(商品名:均為BASF公司製)。 作為茂金屬化合物,例示IRGACURE-784(BASF公司製)等。As the photoradical polymerization initiator, a hydroxyacetophenone compound, an aminoacetophenone compound, and a mercaptophosphine compound can also be suitably used. More specifically, for example, an amino acetophenone-based starter described in JP-A-10-291969 and a sulfhydryl phosphine oxide-based starter described in Japanese Patent No. 4,258,899 can be used. As the hydroxyacetophenone-based initiator, IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (product names: all manufactured by BASF Corporation) can be used. As the amino acetophenone-based initiator, IRGACURE 907, IRGACURE 369, and IRGACURE 379 (trade names: all manufactured by BASF Corporation) which are commercially available can be used. Further, as the aminoacetophenone-based initiator, a compound described in JP-A-2009-191179, which has a maximum absorption wavelength and a wavelength source such as 365 nm or 405 nm, can be used. Examples of the mercaptophosphine-based initiator include 2,4,6-trimethylbenzimidyl-diphenyl-phosphine oxide. Further, IRGACURE-819 or IRGACURE-TPO (trade name: all manufactured by BASF Corporation) which is a commercial item can be used. As the metallocene compound, IRGACURE-784 (manufactured by BASF Corporation) or the like is exemplified.

作為光自由基聚合起始劑,更佳為列舉肟化合物。藉由使用肟化合物,能夠進一步有效地提高曝光寬容度。肟化合物中,曝光寬容度(曝光餘量)較廣,且還作為光鹼產生劑而發揮功能,因此為特佳。 作為肟化合物的具體例,能夠使用日本特開2001-233842號公報中所記載之化合物、日本特開2000-80068號公報中所記載之化合物、日本特開2006-342166號公報中所記載之化合物。 作為較佳的肟化合物,例如可列舉下述結構的化合物、3-苯甲醯氧基亞胺基丁烷-2-酮、3-乙醯氧基亞胺基丁烷-2-酮、3-丙醯氧基亞胺基丁烷-2-酮、2-乙醯氧基亞胺基戊烷-3-酮、2-乙醯氧基亞胺基-1-苯基丙烷-1-酮、2-苯甲醯氧基亞胺基-1-苯基丙烷-1-酮、3-(4-甲苯磺醯氧基)亞胺基丁烷-2-酮以及2-乙氧基羰氧基亞胺基-1-苯基丙烷-1-酮等。 [化學式42]市售品中,還可適宜地使用IRGACURE OXE 01、IRGACURE OXE 02、IRGACURE OXE 03、IRGACURE OXE 04(以上為BASF公司製)、ADEKA OPTOMER N-1919(ADEKA CORPORATION製、日本特開2012-14052號公報中所記載之光自由基聚合起始劑2)。又,能夠使用TR-PBG-304(常州強力電子新材料有限公司製)、ADEKAARKLS NCI-831及ADEKAARKLS NCI-930(ADEKA CORPORATION製)。又,還能能使用DFI-091(DAITO CHEMIX Co., Ltd.製)。 進而,還能夠使用具有氟原子之肟化合物。作為該種肟化合物的具體例,可列舉日本特開2010-262028號公報中所記載之化合物、日本特表2014-500852號公報的0345~0358段中所記載之化合物24、36~40、日本特開2013-164471號公報的0101段中所記載之化合物(C-3)等。 作為最佳的肟化合物,可列舉日本特開2007-269779號公報中所示出之具有特定取代基之肟化合物、日本特開2009-191061號公報中所示出之具有硫芳基之肟化合物等。As the photoradical polymerization initiator, a ruthenium compound is more preferred. The exposure latitude can be further effectively improved by using a ruthenium compound. Among the ruthenium compounds, the exposure latitude (exposure margin) is wide, and it also functions as a photobase generator, which is particularly preferable. As a specific example of the ruthenium compound, a compound described in JP-A-2001-233842, a compound described in JP-A-2000-80068, and a compound described in JP-A-2006-342166 can be used. . Preferred examples of the ruthenium compound include a compound of the following structure: 3-benzylideneoxyimidobutan-2-one, 3-ethyloxyiminobutane-2-one, and 3 - propionyloxyiminobutan-2-one, 2-ethoxymethoxyiminopentan-3-one, 2-ethyloxyimino-1-phenylpropan-1-one , 2-benzylideneoxyimido-1-phenylpropan-1-one, 3-(4-toluenesulfonyloxy)iminobutan-2-one, and 2-ethoxycarbonyloxy Iminoamino-1-phenylpropan-1-one and the like. [Chemical Formula 42] In the commercial product, IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, IRGACURE OXE 04 (above, BASF), ADEKA OPTOMER N-1919 (made by ADEKA CORPORATION, JP-A-2012-14052) can also be suitably used. The photoradical polymerization initiator 2) described in the publication. Further, TR-PBG-304 (manufactured by Changzhou Strong Electronic New Material Co., Ltd.), ADECARARKLS NCI-831, and ADELAARKLS NCI-930 (manufactured by ADEKA CORPORATION) can be used. Further, DFI-091 (manufactured by DAITO CHEMIX Co., Ltd.) can also be used. Further, a ruthenium compound having a fluorine atom can also be used. Specific examples of the ruthenium compound include the compounds described in JP-A-2010-262028, and the compounds 24 and 36 to 40 described in paragraphs 0345 to 0358 of JP-A-2014-500852. The compound (C-3) and the like described in paragraph 0101 of JP-A-2013-164471. The ruthenium compound having a specific substituent as shown in JP-A-2007-269779, and the sulfonium compound having a thioaryl group as shown in JP-A-2009-191061, may be mentioned. Wait.

從曝光感度的觀點考慮,光自由基聚合起始劑係選自包括三鹵甲基三嗪化合物、苄基二甲基縮酮化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、苯并噻唑化合物、二苯甲酮化合物、苯乙酮化合物及其衍生物、環戊二烯基-苯-鐵錯合物及其鹽、鹵甲基噁二唑化合物、3-芳基取代香豆素化合物之組中之化合物。 更佳的光自由基聚合起始劑係三鹵甲基三嗪化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓鹽化合物、二苯甲酮化合物、苯乙酮化合物,選自包括三鹵甲基三嗪化合物、α-胺基酮化合物、肟化合物、三芳基咪唑二聚體、二苯甲酮化合物之組中之至少一種化合物為進一步較佳,使用茂金屬化合物或肟化合物為更進一步較佳,肟化合物為更進一步較佳。 又,光自由基聚合起始劑還能夠使用二苯甲酮、N,N’-四甲基-4,4’-二胺基二苯甲酮(米蚩酮(Michler’s ketone))等N,N’-四烷基-4,4’-二胺基二苯甲酮,2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-丙酮-1等芳香族酮、烷基蒽醌等與芳香環進行縮環而成的醌類、安息香烷基醚等安息香醚化合物、安息香、烷基安息香等安息香化合物、苄基二甲基縮酮等苄基衍生物等。又,還能夠使用由下述式(I)表示之化合物。 [化學式43]式(I)中,R50 係碳數1~20的烷基、因一個以上的氧原子而中斷之碳數2~20的烷基、碳數1~12的烷氧基、苯基、由碳數1~20的烷基、碳數1~12的烷氧基、鹵素原子、環戊基、環己基、碳數2~12的烯基、因一個以上的氧原子而中斷之碳數2~18的烷基及碳數1~4的烷基中的至少一個取代之苯基或聯苯基,R51 係由式(II)表示之基團,或者係與R50 相同的基團,R52 ~R54 各自獨立地係碳數1~12的烷基、碳數1~12的烷氧基或鹵素。 [化學式44]式中,R55 ~R57 與上述式(I)的R52 ~R54 相同。From the viewpoint of exposure sensitivity, the photoradical polymerization initiator is selected from the group consisting of a trihalomethyltriazine compound, a benzyldimethylketal compound, an α-hydroxyketone compound, an α-aminoketone compound, and a mercapto group. Phosphine compound, phosphine oxide compound, metallocene compound, hydrazine compound, triaryl imidazole dimer, sulfonium salt compound, benzothiazole compound, benzophenone compound, acetophenone compound and derivative thereof, cyclopentadienyl group a compound of the group consisting of a benzene-iron complex and a salt thereof, a halomethyl oxadiazole compound, and a 3-aryl-substituted coumarin compound. More preferred photoradical polymerization initiators are trihalomethyltriazine compounds, α-amino ketone compounds, mercaptophosphine compounds, phosphine oxide compounds, metallocene compounds, ruthenium compounds, triaryl imidazole dimers, ruthenium a salt compound, a benzophenone compound, an acetophenone compound, selected from the group consisting of a trihalomethyltriazine compound, an α-aminoketone compound, an anthraquinone compound, a triaryl imidazole dimer, and a benzophenone compound Further, at least one compound is further preferably used, and a metallocene compound or a ruthenium compound is further preferably used, and a ruthenium compound is still more preferable. Further, the photoradical polymerization initiator can also use N such as benzophenone or N,N'-tetramethyl-4,4'-diaminobenzophenone (Michler's ketone). N'-tetraalkyl-4,4'-diaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butanone-1, An anthracene such as an aromatic ketone such as 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinyl-acetone-1 or an alkyl hydrazine, which is condensed with an aromatic ring, A benzoin compound such as a benzoin alkyl ether, a benzoin compound such as benzoin or an alkyl benzoin, or a benzyl derivative such as benzyldimethylketal. Further, a compound represented by the following formula (I) can also be used. [Chemical Formula 43] In the formula (I), R 50 is an alkyl group having 1 to 20 carbon atoms, an alkyl group having 2 to 20 carbon atoms interrupted by one or more oxygen atoms, an alkoxy group having 1 to 12 carbon atoms, or a phenyl group. An alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, a halogen atom, a cyclopentyl group, a cyclohexyl group, an alkenyl group having 2 to 12 carbon atoms, and a carbon number interrupted by one or more oxygen atoms 2 a phenyl group or a biphenyl group in which at least one of the alkyl group of -18 and the alkyl group having 1 to 4 carbon atoms is substituted, and R 51 is a group represented by the formula (II) or a group similar to R 50 . R 52 to R 54 each independently represent an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms or a halogen. [Chemical Formula 44] In the formula, R 55 to R 57 are the same as R 52 to R 54 of the above formula (I).

又,光自由基聚合起始劑還能夠使用國際公開WO2015/125469號的0048~0055段中所記載之化合物。Further, as the photoradical polymerization initiator, the compound described in paragraphs 0048 to 0055 of International Publication WO2015/125469 can also be used.

光自由基聚合起始劑的含量相對於本發明的組成物的總固體成分係0.1~30質量%為較佳,更佳為0.1~20質量%,進一步較佳為1~15質量%,進一步較佳為1~10質量%。光自由基聚合起始劑可以僅含有一種,亦可以含有兩種以上。當含有兩種以上的光自由基聚合起始劑時,其合計係上述範圍為較佳。The content of the photoradical polymerization initiator is preferably from 0.1 to 30% by mass, more preferably from 0.1 to 20% by mass, even more preferably from 1 to 15% by mass, based on the total solid content of the composition of the present invention, further It is preferably from 1 to 10% by mass. The photoradical polymerization initiator may be contained alone or in combination of two or more. When two or more kinds of photoradical polymerization initiators are contained, the above range is preferred.

<<熱自由基聚合起始劑>> 本發明的組成物於不脫離本發明的宗旨之範圍內可以含有熱自由基聚合起始劑。 熱自由基聚合起始劑係藉由熱的能量而產生自由基,並開始或促進具有聚合性之化合物的聚合反應之化合物。藉由添加熱自由基聚合起始劑,能夠進行聚醯亞胺前驅物的環化,並且進行聚醯亞胺前驅物的聚合反應,因此能夠實現更高度的耐熱化。 作為熱自由基聚合起始劑,具體而言,可列舉日本特開2008-63554號公報的0074~0118段中所記載之化合物。<<Thermal radical polymerization initiator>> The composition of the present invention may contain a thermal radical polymerization initiator insofar as it does not depart from the gist of the present invention. The thermal radical polymerization initiator is a compound which generates a radical by thermal energy and starts or promotes polymerization of a polymerizable compound. By adding a thermal radical polymerization initiator, cyclization of the polyimide precursor can be carried out, and polymerization of the polyimide precursor can be carried out, so that higher heat resistance can be achieved. Specific examples of the thermal radical polymerization initiator include the compounds described in paragraphs 0074 to 0118 of JP-A-2008-63554.

當包含熱自由基聚合起始劑時,其含量相對於本發明的組成物的總固體成分係0.1~30質量%為較佳,更佳為0.1~20質量%,進一步較佳為5~15質量%。熱自由基聚合起始劑可以僅含有一種,亦可以含有兩種以上。當含有兩種以上的熱自由基聚合起始劑時,其合計係上述範圍為較佳。When the thermal radical polymerization initiator is contained, the content thereof is preferably from 0.1 to 30% by mass, more preferably from 0.1 to 20% by mass, even more preferably from 5 to 15%, based on the total solid content of the composition of the present invention. quality%. The thermal radical polymerization initiator may be contained alone or in combination of two or more. When two or more kinds of thermal radical polymerization initiators are contained, the above range is preferred.

<<溶劑>> 本發明的組成物含有溶劑為較佳。溶劑能夠任意使用公知者。溶劑較佳為有機溶劑。作為有機溶劑,可列舉酯類、醚類、酮類、芳香族烴類、亞碸類、醯胺類等化合物。 作為酯類,例如作為適宜者,可列舉乙酸乙酯、乙酸正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例如,烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如,甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例如,3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如,3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例如,2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如,2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如,2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等。 作為醚類,例如作為適宜者,可列舉二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等。 作為酮類,例如作為適宜者,可列舉甲基乙基酮、環己酮、環戊酮,2-庚酮、3-庚酮等。 作為芳香族烴類,例如作為適宜者,可列舉甲苯、二甲苯、苯甲醚、檸檬烯等。 作為亞碸類,例如作為適宜者,可列舉二甲基亞碸。 作為醯胺類,作為適宜者,可列舉N-甲基-2-吡咯烷酮、N-乙基-2-吡咯烷酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺等。<<Solvent>> The composition of the present invention preferably contains a solvent. The solvent can be arbitrarily used by a known person. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, aromatic hydrocarbons, anthracenes, and decylamines. Examples of the esters include ethyl acetate, n-butyl acetate, isobutyl acetate, amyl acetate, isoamyl acetate, butyl propionate, isopropyl butyrate, and ethyl butyrate. Butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxyacetate (for example, methyl alkoxyacetate, alkoxylate) Ethyl acetate, alkoxy butyl acetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.) , 3-alkoxypropionic acid alkyl esters (for example, methyl 3-alkoxypropionate, ethyl 3-alkoxypropionate, etc. (for example, methyl 3-methoxypropionate, 3 -ethyl methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), alkyl 2-alkoxypropionate (for example, 2-alkoxy) Methyl propyl propionate, ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (for example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2 -propyl methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)) Methyl 2-alkoxy-2-methylpropanoate and ethyl 2-alkoxy-2-methylpropanoate (for example, methyl 2-methoxy-2-methylpropionate, 2-B Ethyl oxy-2-methylpropionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, methyl 2-oxobutanoate, Ethyl 2-oxobutanoate or the like. Examples of the ethers include diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, and ethyl cellosolve acetate. Ester, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether Acid esters, etc. Examples of the ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, and 3-heptanone. Examples of the aromatic hydrocarbons include toluene, xylene, anisole, limonene, and the like. As a fluorene, for example, dimethyl fluorene is exemplified as a suitable one. Examples of the guanamines include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylacetamide, and N,N-dimethylformamide. Wait.

關於溶劑,從塗佈面狀的改良等的觀點考慮,混合兩種以上之形態亦為較佳。其中,由選自3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚及丙二醇甲醚乙酸酯中之兩種以上構成之混合溶液為較佳。同時使用二甲基亞碸和γ-丁內酯為特佳。The solvent is preferably a mixture of two or more types from the viewpoint of improvement in coating surface shape and the like. Wherein, it is selected from the group consisting of methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, Methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethyl hydrazine, ethyl carbitol acetate, butyl carbitol A mixed solution of two or more of an acid ester, propylene glycol methyl ether and propylene glycol methyl ether acetate is preferred. It is particularly preferable to use both dimethyl hydrazine and γ-butyrolactone.

關於溶劑的含量,從塗佈性的觀點考慮,設為本發明的組成物的總固體成分濃度成為5~80質量%之量為較佳,設為本發明的組成物的總固體成分濃度成為5~70質量%的量為進一步較佳,設為本發明的組成物的總固體成分濃度成為10~60質量%為特佳。溶劑的含量依所希望的厚度和塗佈方法來進行調節即可。 溶劑可以僅含有一種,亦可以含有兩種以上。當含有兩種以上的溶劑時,其合計為上述範圍為較佳。The content of the solvent is preferably from 5 to 80% by mass based on the total solid content of the composition of the present invention, and the total solid content concentration of the composition of the present invention is The amount of 5 to 70% by mass is more preferably the total solid content concentration of the composition of the present invention is particularly preferably 10 to 60% by mass. The content of the solvent may be adjusted depending on the desired thickness and the coating method. The solvent may be contained alone or in combination of two or more. When two or more solvents are contained, the total range is preferably in the above range.

<<自由基聚合性化合物>> 本發明的組成物包含自由基聚合性化合物(以下,還稱為“聚合性單體”)為較佳。藉由設為該種構成,能夠形成耐熱性優異之硬化膜。<<Radical Polymerizable Compound>> The composition of the present invention is preferably a radically polymerizable compound (hereinafter also referred to as "polymerizable monomer"). By adopting such a configuration, a cured film excellent in heat resistance can be formed.

聚合性單體能夠使用具有自由基聚合性基之化合物。作為自由基聚合性基,可列舉苯乙烯基、乙烯基、(甲基)丙烯醯基及烯丙基等具有烯屬不飽和鍵之基團。自由基聚合性基係(甲基)丙烯醯基為較佳。As the polymerizable monomer, a compound having a radical polymerizable group can be used. Examples of the radical polymerizable group include a group having an ethylenically unsaturated bond such as a styryl group, a vinyl group, a (meth)acryl fluorenyl group, and an allyl group. A radically polymerizable (meth)acrylonitrile group is preferred.

聚合性單體所具有之自由基聚合性基的數量可以是一個,亦可以是兩個以上,但聚合性單體具有兩個以上的自由基聚合性基為較佳,具有3個以上為更佳。上限係15個以下為較佳,10個以下為更佳,8個以下為進一步較佳。The number of the radical polymerizable groups which the polymerizable monomer may have may be one or two or more. However, it is preferred that the polymerizable monomer has two or more radical polymerizable groups, and three or more of them are more preferable. good. The upper limit is preferably 15 or less, more preferably 10 or less, and still more preferably 8 or less.

聚合性單體的分子量係2000以下為較佳,1500以下為更佳,900以下為進一步較佳。聚合性單體的分子量的下限係100以上為較佳。The molecular weight of the polymerizable monomer is preferably 2,000 or less, more preferably 1,500 or less, and still more preferably 900 or less. The lower limit of the molecular weight of the polymerizable monomer is preferably 100 or more.

從顯影性的觀點考慮,本發明的組成物含有至少一種包含兩個以上的聚合性基之2官能以上的聚合性單體為較佳,含有至少一種3官能以上的聚合性單體為更佳。又,亦可以係2官能聚合性單體與3官能以上的聚合性單體的混合物。此外,聚合性單體的官能基數是指,1分子中的自由基聚合性基的數。From the viewpoint of the developability, the composition of the present invention preferably contains at least one polymerizable monomer having two or more functional groups containing two or more polymerizable groups, and more preferably at least one polymerizable monomer having at least one trifunctional or higher functional group. . Further, a mixture of a bifunctional polymerizable monomer and a trifunctional or higher polymerizable monomer may also be used. Further, the number of functional groups of the polymerizable monomer means the number of radical polymerizable groups in one molecule.

作為聚合性化合物的具體例,可列舉不飽和羧酸(例如,丙烯酸、甲基丙烯酸、衣康酸、巴豆酸、異巴豆酸、順丁烯二酸等)或其酯類、醯胺類,較佳為不飽和羧酸與多元醇化合物的酯及不飽和羧酸與多元胺化合物的醯胺類。又,還可適宜地使用羥基或胺基、巰基等具有親和性取代基之不飽和羧酸酯或醯胺類與單官能或多官能異氰酸酯類或環氧類的加成反應物、與單官能或多官能的羧酸的脱水縮合反應物等。又,具有異氰酸酯基或環氧基等親電子性取代基之不飽和羧酸酯或醯胺類與單官能或多官能醇類、胺類、硫醇類的加成反應物及鹵素基或甲苯磺醯氧基等具有脱離性取代基之不飽和羧酸酯或醯胺類與單官能或多官能醇類、胺類、硫醇類的取代反應物亦適宜。又,作為另一例,替代上述不飽和羧酸,能夠使用被不飽和膦酸、苯乙烯等乙烯基苯衍生物、乙烯醚、烯丙醚等取代之化合物組。作為具體例,能夠參閱日本特開2016-027357號公報的0113~0122段的記載,並將該些內容編入本說明書中。Specific examples of the polymerizable compound include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) or esters thereof and guanamines. Preferred are esters of unsaturated carboxylic acids with polyol compounds and amides of unsaturated carboxylic acids and polyamine compounds. Further, an unsaturated carboxylic acid ester having an affinity substituent such as a hydroxyl group, an amine group or a fluorenyl group, or an addition reaction product of a monofunctional or polyfunctional isocyanate or epoxy group, and a monofunctional group may be suitably used. Or a dehydration condensation reaction of a polyfunctional carboxylic acid or the like. Further, an unsaturated carboxylic acid ester having an electrophilic substituent such as an isocyanate group or an epoxy group or an addition reaction of a guanamine with a monofunctional or polyfunctional alcohol, an amine or a thiol, and a halogen group or a toluene A substituted reactant of an unsaturated carboxylic acid ester or a decylamine having a destructive substituent such as a sulfonyloxy group and a monofunctional or polyfunctional alcohol, an amine or a thiol is also suitable. Further, as another example, in place of the above unsaturated carboxylic acid, a compound group substituted with a vinylbenzene derivative such as an unsaturated phosphonic acid or styrene, a vinyl ether or an allyl ether can be used. As a specific example, the description of paragraphs 0113 to 0122 of JP-A-2016-027357 can be referred to, and the contents are incorporated in the present specification.

又,聚合性單體於常壓下具有100℃以上的沸點的化合物亦較佳。作為其例,能夠列舉聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇五(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異三聚氰酸酯、甘油或三羥甲基乙烷等在多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化之化合物、日本特公昭48-41708號公報、日本特公昭50-6034號公報、日本特開昭51-37193號公報中所記載之(甲基)丙烯酸胺基甲酸酯類、日本特開昭48-64183號公報、日本特公昭49-43191號公報、日本特公昭52-30490號公報中所記載之聚酯丙烯酸酯類,作為環氧樹脂與(甲基)丙烯酸的反應產物的環氧丙烯酸酯類等多官能的丙烯酸酯或甲基丙烯酸酯、以及該些的混合物。又,日本特開2008-292970號公報的0254~0257段中所記載之化合物亦適宜。又,還能夠列舉使多官能羧酸與(甲基)丙烯酸縮水甘油酯等具有環狀醚基及乙烯性不飽和基的化合物進行反應而獲得的多官能(甲基)丙烯酸酯等。 又,作為其他較佳的聚合性單體,還能夠使用日本特開2010-160418號公報、日本特開2010-129825號公報、日本專利第4364216號等中所記載之具有茀環,且具有2個以上的含有乙烯性不飽和鍵的基團的化合物或卡多(cardo)樹脂。 進而,作為其他例,還能夠列舉日本特公昭46-43946號公報、日本特公平1-40337號公報、日本特公平1-40336號公報中所記載之特定的不飽和化合物、日本特開平2-25493號公報中所記載之乙烯基膦酸系化合物等。又,還能夠使用日本特開昭61-22048號公報中所記載之包含全氟烷基的化合物。進而,還能夠使用“Journal of the Adhesion Society of Japan”vol.20、No.7、300頁~308頁(1984年)中作為光聚合性單體及寡聚物所介紹者。Further, a compound having a polymerizable monomer having a boiling point of 100 ° C or higher at normal pressure is also preferred. Examples thereof include polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, and pentaerythritol III ( Methyl) acrylate, neopentyl alcohol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexane diol (methyl) Acrylate, trimethylolpropane tris(propylene oxypropyl)ether, tris(propylene decyloxyethyl)isocyanate, glycerol or trimethylolethane in polyfunctional alcohols A compound which is (meth) acrylated after addition of ethylene oxide or propylene oxide, Japanese Patent Publication No. Sho 48-41708, Japanese Patent Publication No. Sho-50-6034, and Japanese Patent Laid-Open No. Sho 51-37193 The polyester acrylates described in Japanese Patent Publication No. Sho 49-43191, Japanese Patent Publication No. Sho 49-43191, and Japanese Patent Publication No. Sho 52-30490 , as an epoxy acrylate such as a reaction product of an epoxy resin and (meth)acrylic acid Acrylate or methacrylate, and a mixture of these. Further, a compound described in paragraphs 0254 to 0257 of JP-A-2008-292970 is also suitable. In addition, a polyfunctional (meth)acrylate obtained by reacting a polyfunctional carboxylic acid with a compound having a cyclic ether group or an ethylenically unsaturated group such as glycidyl (meth)acrylate can be used. Further, as another preferable polymerizable monomer, an anthracene ring described in Japanese Patent Laid-Open No. 2010-160418, Japanese Patent Laid-Open No. 2010-129825, and No. 4,364,216, and the like, More than one compound containing a group having an ethylenically unsaturated bond or a cardo resin. Further, as another example, a specific unsaturated compound described in JP-A-46-43946, JP-A No. 1-40337, and JP-A No. 1-40336 can be cited. A vinylphosphonic acid-based compound or the like described in Japanese Laid-Open Publication No. 25493. Further, a compound containing a perfluoroalkyl group described in JP-A-61-22048 can also be used. Further, as a photopolymerizable monomer and oligomer, "Journal of the Adhesion Society of Japan" vol. 20, No. 7, and pages 300 to 308 (1984) can also be used.

除了上述以外,還能夠較佳地使用日本特開2015-034964號公報的0048~0051段中所記載之化合物,並將該些內容編入本說明書中。In addition to the above, the compounds described in paragraphs 0048 to 0051 of JP-A-2015-034964 can be preferably used, and the contents are incorporated in the present specification.

又,於日本特開平10-62986號公報中作為式(1)及式(2)且與其具體例一同記載之如下化合物還能用作聚合性單體,該化合物係於多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成的化合物。Further, the following compounds described in the formula (1) and the formula (2) together with the specific examples thereof can also be used as a polymerizable monomer, which is added to a polyfunctional alcohol, in the Japanese Patent Publication No. Hei 10-62986. A compound obtained by (meth)acrylation after ethylene oxide or propylene oxide.

進而,還能夠使用日本特開2015-187211號公報的0104~0131段中所記載之化合物來用作聚合性單體,並將該些內容編入本說明書中。Furthermore, the compound described in paragraphs 0104 to 0131 of JP-A-2015-187211 can be used as a polymerizable monomer, and the contents are incorporated in the present specification.

作為聚合性單體,二新戊四醇三丙烯酸酯(作為市售品為KAYARAD D-330;Nippon Kayaku Co.,Ltd.製)、二新戊四醇四丙烯酸酯(作為市售品為KAYARAD D-320;Nippon Kayaku Co.,Ltd.製、A-TMMT:Shin-Nakamura Chemical Co., Ltd.製)、二新戊四醇五(甲基)丙烯酸酯(作為市售品為KAYARAD D-310;Nippon Kayaku Co.,Ltd.製)、二新戊四醇六(甲基)丙烯酸酯(作為市售品為KAYARAD DPHA;Nippon Kayaku Co.,Ltd.製、A-DPH;Shin-Nakamura Chemical Co., Ltd.製)及該些的(甲基)丙烯醯基經由乙二醇殘基、丙二醇殘基鍵結之結構為較佳。還能夠使用它們的寡聚物類型。As a polymerizable monomer, dipentaerythritol triacrylate (commercially available as KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (commercially available as KAYARAD) D-320; manufactured by Nippon Kayaku Co., Ltd., A-TMMT: manufactured by Shin-Nakamura Chemical Co., Ltd.), dipentaerythritol penta(meth)acrylate (as a commercial product, KAYARAD D- 310; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol hexa(meth) acrylate (commercially available as KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., A-DPH; Shin-Nakamura Chemical) It is preferred that the (meth)acryloyl group is bonded via an ethylene glycol residue or a propylene glycol residue. It is also possible to use their oligomer type.

作為聚合性單體的市售品,例如可列舉Sartomer Company, Inc製的作為具有4個伸乙氧基鏈之4官能丙烯酸酯之SR-494、作為具有4個乙烯氧基鏈之2官能丙烯酸甲酯之Sartomer Company, Inc製SR-209、Nippon Kayaku Co.,Ltd.製的作為具有6個伸戊氧基鏈之6官能丙烯酸酯之DPCA-60、作為具有3個異伸丁氧基鏈之3官能丙烯酸酯之TPA-330、NK酯M-40G、NK酯4G、NK酯M-9300、NK酯A-9300、UA-7200(Shin-Nakamura Chemical Co.,Ltd製)、DPHA-40H(Nippon Kayaku Co.,Ltd.製)、UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(Kyoeisha chemical Co.,Ltd.製)、BLEMMER PME400(NOF CORPORATION.製)等。As a commercial item of a polymerizable monomer, for example, SR-494, which is a 4-functional acrylate having four ethylene oxide chains, as a bifunctional acrylic acid having four ethyleneoxy chains, can be cited as a product of Sartomer Company, Inc. As a methyl ester of Sartomer Company, Inc., manufactured by SR-209, Nippon Kayaku Co., Ltd., as a 6-functional acrylate having 6 pentylene oxide chains, as DPCA-60 having 3 isomerized butoxy chains Trifunctional acrylate TPA-330, NK ester M-40G, NK ester 4G, NK ester M-9300, NK ester A-9300, UA-7200 (Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), BLEMMER PME400 (NOF CORPORATION) .)).

作為聚合性單體,如日本特公昭48-41708號公報、日本特開昭51-37193號公報、日本特公平2-32293號公報、日本特公平2-16765號公報中所記載之那樣的胺基甲酸酯丙烯酸酯類、日本特公昭58-49860號公報、日本特公昭56-17654號公報、日本特公昭62-39417號公報、日本特公昭62-39418號公報中所記載之具有環氧乙烷系骨架之胺基甲酸酯化合物類亦適宜。進而,作為聚合性單體,還能夠使用日本特開昭63-277653號公報、日本特開昭63-260909號公報、日本特開平1-105238號公報中所記載之於分子內具有胺基結構或硫化物結構之化合物。As the polymerizable monomer, an amine such as that described in JP-A-H08-41708, JP-A-53-37193, JP-A No. 2-32293, and JP-A No. 2-16765 The urethane acrylates, the epexes described in JP-A-58-49860, JP-A-56-17654, JP-A-62-39417, and JP-A-62-39418 A urethane compound of an ethane-based skeleton is also suitable. In addition, as the polymerizable monomer, an amine group structure in the molecule described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. Or a compound of a sulfide structure.

聚合性單體可以係具有羧基、磺基、磷酸基等酸基之聚合性單體。具有酸基之聚合性單體中,脂肪族多羥基化合物與不飽和羧酸的酯為較佳,使脂肪族多羥基化合物的未反應的羥基與非芳香族羧酸酐反應而具有酸基之聚合性單體為更佳。特佳為使脂肪族多羥基化合物的未反應的羥基與非芳香族羧酸酐反應而具有酸基之聚合性單體中,脂肪族多羥基化合物係作為新戊四醇和/或二新戊四醇之化合物。作為市售品,例如,作為TOAGOSEI CO., LTD.製多元酸改質丙烯酸類寡聚物,可列舉M-510、M-520等。 具有酸基之聚合性單體可以單獨使用一種,亦可以混合使用兩種以上。又,依需要,可同時使用不具有酸基之聚合性單體和具有酸基之聚合性單體。 具有酸基之聚合性單體的較佳的酸值係0.1~40mgKOH/g,特佳為5~30mgKOH/g。聚合性單體的酸值只要在上述範圍內,則製造或操作性優異,進而顯影性優異。又,聚合性亦良好。The polymerizable monomer may be a polymerizable monomer having an acid group such as a carboxyl group, a sulfo group or a phosphoric acid group. Among the polymerizable monomers having an acid group, an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid is preferred, and an unreacted hydroxyl group of the aliphatic polyhydroxy compound is reacted with a non-aromatic carboxylic anhydride to have an acid group polymerization. The sex monomer is better. Particularly preferred is a polymerizable monomer having an acid group in which an unreacted hydroxyl group of an aliphatic polyhydroxy compound is reacted with a non-aromatic carboxylic acid anhydride, and an aliphatic polyhydroxy compound is used as neopentyl alcohol and/or dipentaerythritol. Compound. As a commercial item, for example, as a polybasic acid-modified acrylic oligomer manufactured by TOAGOSEI CO., LTD., M-510, M-520, etc. are mentioned. The polymerizable monomer having an acid group may be used singly or in combination of two or more. Further, if necessary, a polymerizable monomer having no acid group and a polymerizable monomer having an acid group can be used at the same time. The acid value of the polymerizable monomer having an acid group is preferably from 0.1 to 40 mgKOH/g, particularly preferably from 5 to 30 mgKOH/g. When the acid value of the polymerizable monomer is within the above range, the production or handling property is excellent, and the developability is excellent. Moreover, the polymerizability is also good.

從良好的聚合性和耐熱性的觀點考慮,聚合性單體的含量相對於本發明的組成物的總固體成分係1~50質量%為較佳。下限係5質量%以上為更佳。上限係30質量%以下為更佳。聚合性單體可以單獨使用一種,亦可以混合使用兩種以上。 又,聚醯亞胺前驅物與聚合性單體的質量比例(聚醯亞胺前驅物/聚合性單體)係98/2~10/90為較佳,95/5~30/70為更佳,90/10~50/50為進一步較佳。聚醯亞胺前驅物與聚合性單體的質量比例只要係上述範圍,則能夠形成聚合性及耐熱性更加優異之硬化膜。The content of the polymerizable monomer is preferably from 1 to 50% by mass based on the total solid content of the composition of the present invention from the viewpoint of good polymerizability and heat resistance. The lower limit is preferably 5% by mass or more. The upper limit is preferably 30% by mass or less. The polymerizable monomers may be used singly or in combination of two or more. Further, the mass ratio of the polyimine precursor to the polymerizable monomer (polyimine precursor/polymerizable monomer) is preferably 98/2 to 10/90, and 95/5 to 30/70 is more. Preferably, 90/10 to 50/50 is further preferred. When the mass ratio of the polyimine precursor to the polymerizable monomer is within the above range, a cured film having more excellent polymerizability and heat resistance can be formed.

從抑制伴隨硬化膜的彈性率控制之翹曲的觀點考慮,本發明的組成物能夠較佳地使用單官能聚合性單體。作為單官能聚合性單體,可較佳地使用正丁基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、2-羥乙基(甲基)丙烯酸酯、丁氧基乙基(甲基)丙烯酸酯、卡必醇(甲基)丙烯酸酯、環己基(甲基)丙烯酸酯、芐基(甲基)丙烯酸酯、苯氧基乙基(甲基)丙烯酸酯、N-羥甲基(甲基)丙烯醯胺、縮水甘油基(甲基)丙烯酸酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯等(甲基)丙烯酸衍生物、N-乙烯基吡咯烷酮、N-乙烯基己內醯胺等N-乙烯基化合物類、烯丙基縮水甘油醚、鄰苯二甲酸二烯丙酯、偏苯三酸三烯丙酯等烯丙基化合物類等。作為單官能聚合性單體,為了抑制曝光前的揮發,於常壓下具有100℃以上的沸點之化合物亦為較佳。From the viewpoint of suppressing the warpage controlled by the modulus of elasticity of the cured film, the composition of the present invention can preferably use a monofunctional polymerizable monomer. As the monofunctional polymerizable monomer, n-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, butoxy group can be preferably used. Ethyl (meth) acrylate, carbitol (meth) acrylate, cyclohexyl (meth) acrylate, benzyl (meth) acrylate, phenoxy ethyl (meth) acrylate, N - (meth)acrylic acid derived from -hydroxymethyl (meth) acrylamide, glycidyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate N-vinyl compounds such as N-vinylpyrrolidone and N-vinyl caprolactam, allyl glycidyl ether, diallyl phthalate, triallyl trimellitate and the like A propyl compound or the like. As the monofunctional polymerizable monomer, in order to suppress volatilization before exposure, a compound having a boiling point of 100 ° C or higher at normal pressure is also preferable.

<<其他聚合性化合物>> 本發明的組成物還能夠含有上述之聚醯亞胺前驅物及自由基聚合性化合物以外的其他聚合性化合物。作為其他聚合性化合物,可列舉具有羥甲基、烷氧甲基或醯氧甲基之化合物;環氧化合物;氧雜環丁烷化合物;苯并㗁𠯤化合物。<<Other Polymerizable Compound>> The composition of the present invention can further contain a polymerizable compound other than the above-described polyimine precursor and radical polymerizable compound. Examples of the other polymerizable compound include a compound having a methylol group, an alkoxymethyl group or a fluorenyloxymethyl group; an epoxy compound; an oxetane compound; and a benzofluorene compound.

(具有羥甲基、烷氧甲基或醯氧甲基之化合物) 作為具有羥甲基、烷氧甲基或醯氧甲基之化合物,由下述式(AM1)表示之化合物為較佳。(Compound having a methylol group, an alkoxymethyl group or a decyloxymethyl group) As the compound having a methylol group, an alkoxymethyl group or a fluorenyloxymethyl group, a compound represented by the following formula (AM1) is preferred.

[化學式45](式中,t表示1~20的整數,R4 表示碳數1~200的t價有機基,R5 表示由-OR6 或-OCO-R7 表示之基團,R6 表示氫原子或碳數1~10的有機基,R7 表示碳數1~10的有機基。)[Chemical Formula 45] (wherein t represents an integer of 1 to 20, R 4 represents a t-valent organic group having 1 to 200 carbon atoms, R 5 represents a group represented by -OR 6 or -OCO-R 7 , and R 6 represents a hydrogen atom or An organic group having 1 to 10 carbon atoms, and R 7 represents an organic group having 1 to 10 carbon atoms.

相對於聚醯亞胺前驅物100質量份,由式(AM1)表示之化合物的含量係5~40質量份為較佳。進一步較佳為10~35質量份。又,其他聚合性化合物的總量中含有10~90質量%的由下述式(AM4)表示之化合物,含有10~90質量%的由下述式(AM5)表示之化合物亦為較佳。The content of the compound represented by the formula (AM1) is preferably 5 to 40 parts by mass based on 100 parts by mass of the polyimine precursor. More preferably, it is 10 to 35 mass parts. In addition, the compound represented by the following formula (AM4) is contained in an amount of 10 to 90% by mass in the total amount of the other polymerizable compound, and a compound represented by the following formula (AM5) is also preferably contained in an amount of 10 to 90% by mass.

[化學式46](式中,R4 表示碳數1~200的2價有機基,R5 表示由-OR6 或-OCO-R7 表示之基團,R6 表示氫原子或碳數1~10的有機基,R7 表示碳數1~10的有機基。)[Chemical Formula 46] (wherein R 4 represents a divalent organic group having 1 to 200 carbon atoms, R 5 represents a group represented by -OR 6 or -OCO-R 7 , and R 6 represents a hydrogen atom or an organic group having 1 to 10 carbon atoms; R 7 represents an organic group having 1 to 10 carbon atoms.)

[化學式47](式中,u表示3~8的整數,R4 表示碳數1~200的u價有機基,R5 表示由-OR6 或、-OCO-R7 表示之基團,R6 表示氫原子或碳數1~10的有機基,R7 表示碳數1~10的有機基。)[Chemical Formula 47] (wherein, u represents an integer of 3 to 8, R 4 represents a u-valent organic group having 1 to 200 carbon atoms, R 5 represents a group represented by -OR 6 or -OCO-R 7 , and R 6 represents a hydrogen atom. Or an organic group having 1 to 10 carbon atoms, and R 7 represents an organic group having 1 to 10 carbon atoms.)

藉由使用上述具有羥甲基等之化合物,在凹凸的基板上應用了本發明的組成物時,能夠更加有效地抑制龜裂的產生。又,能夠形成圖案加工性優異,具有質量減少5%之溫度成為350℃以上,更佳為成為380℃以上的較高的耐熱性之硬化膜。作為由式(AM4)表示之化合物的具體例,可列舉46DMOC、46DMOEP(以上為商品名,ASAHI YUKIZAI CORPORATION製)、DML-MBPC、DML-MBOC、DML-OCHP、DML-PCHP、DML-PC、DML-PTBP、DML-34X、DML-EP、DML-POP、dimethylolBisOC-P、DML-PFP、DML-PSBP、DML-MTrisPC(以上為商品名,Honshu Chemical Industry Co., Ltd.製)、NIKALAC MX-290(商品名,Sanwa Chemical Co., Ltd.製)、2,6-dimethoxymethyl-4-t-buthylphenol(2,6-二甲氧基甲基-4-第三丁基苯酚)、2,6-dimethoxymethyl-p-cresol(2,6-二甲氧基甲基-對甲酚)、2,6-diacethoxymethyl-p-cresol(2,6-2-二乙醯氧基甲基-對甲酚)等。When the composition of the present invention is applied to a concave-convex substrate by using the compound having a methylol group or the like, the occurrence of cracks can be more effectively suppressed. In addition, it is excellent in pattern workability, and the temperature at which the mass is reduced by 5% is 350° C. or higher, and more preferably a cured film having a high heat resistance of 380° C. or higher. Specific examples of the compound represented by the formula (AM4) include 46DMOC, 46DMOEP (above, trade name, manufactured by ASAHI YUKIZAI CORPORATION), DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylolBisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC (above, trade name, manufactured by Honshu Chemical Industry Co., Ltd.), NIKALAC MX -290 (trade name, manufactured by Sanwa Chemical Co., Ltd.), 2,6-dimethoxymethyl-4-t-buthylphenol (2,6-dimethoxymethyl-4-t-butylphenol), 2, 6-dimethoxymethyl-p-cresol (2,6-dimethoxymethyl-p-cresol), 2,6-diacethoxymethyl-p-cresol (2,6-2-diethoxymethyl-methyl) Phenol) and the like.

又,作為由式(AM5)表示之化合物的具體例,可列舉TriML-P、TriML-35XL、TML-HQ、TML-BP、TML-pp-BPF、TML-BPA、TMOM-BP、HML-TPPHBA、HML-TPHAP、HMOM-TPPHBA、HMOM-TPHAP(以上為商品名,Honshu Chemical Industry Co., Ltd.製)、TM-BIP-A(商品名,ASAHI YUKIZAI CORPORATION製)、NIKALAC MX-280、NIKALAC MX-270、NIKALAC MW-100LM(以上為商品名,Sanwa Chemical Co., Ltd.製)。Further, specific examples of the compound represented by the formula (AM5) include TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPA, TMOM-BP, and HML-TPPHBA. , HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (above trade name, manufactured by Honshu Chemical Industry Co., Ltd.), TM-BIP-A (trade name, manufactured by ASAHI YUKIZAI CORPORATION), NIKALAC MX-280, NIKALAC MX-270, NIKALAC MW-100LM (above, trade name, manufactured by Sanwa Chemical Co., Ltd.).

(環氧化合物(具有環氧基之化合物)) 作為環氧化合物,係於一分子中具有兩個以上的環氧基之化合物為較佳。環氧基於200℃以下進行交聯反應,並且由於不會引起源自交聯之脫水反應而很難引起膜收縮。因此,藉由含有環氧化合物,可有效地抑制組成物的低溫硬化及翹曲。(Epoxy compound (compound having an epoxy group)) As the epoxy compound, a compound having two or more epoxy groups in one molecule is preferred. The epoxy is subjected to a crosslinking reaction based on 200 ° C or less, and it is difficult to cause film shrinkage because it does not cause a dehydration reaction derived from crosslinking. Therefore, by containing an epoxy compound, low-temperature hardening and warpage of the composition can be effectively suppressed.

環氧化合物含有聚環氧乙烷基為較佳。藉此,彈性率進一步降低,並且能夠抑制翹曲。聚環氧乙烷基是指,環氧乙烷的重複單元數為2以上,重複單元數係2~15為較佳。The epoxy compound preferably contains a polyethylene oxide group. Thereby, the modulus of elasticity is further lowered, and warpage can be suppressed. The polyethylene oxide group means that the number of repeating units of ethylene oxide is 2 or more, and the number of repeating units is preferably 2 to 15.

作為環氧化合物的例,能夠列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、丙二醇二縮水甘油醚等伸烷基二醇型環氧樹脂、聚丙二醇二縮水甘油醚等聚伸烷基二醇型環氧樹脂、聚甲基(縮水甘油氧基丙基)矽氧烷等含環氧基矽酮等,但並不限定於該些。具體而言,可列舉EPICLON(註冊商標)850-S、EPICLON(註冊商標)HP-4032、EPICLON(註冊商標)HP-7200、EPICLON(註冊商標)HP-820、EPICLON(註冊商標)HP-4700、EPICLON(註冊商標)EXA-4710、EPICLON(註冊商標)HP-4770、EPICLON(註冊商標)EXA-859CRP、EPICLON(註冊商標)EXA-1514、EPICLON(註冊商標)EXA-4880、EPICLON(註冊商標)EXA-4850-150、EPICLON EXA-4850-1000、EPICLON(註冊商標)EXA-4816、EPICLON(註冊商標)EXA-4822(以上為商品名,DIC Corporation製)、RIKARESIN(註冊商標)BEO-60E(商品名,New Japan Chemical Co., Ltd.製)、EP-4003S、EP-4000S(以上為商品名,ADEKA CORPORATION製)等。該些中,從抑制翹曲及耐熱性優異的方面考慮,含有聚環氧乙烷基之環氧樹脂為較佳。例如,EPICLON(註冊商標)EXA-4880、EPICLON(註冊商標)EXA-4822、RIKARESIN(註冊商標)BEO-60E含有聚環氧乙烷基,因此為較佳。Examples of the epoxy compound include an extended alkyl diol type epoxy resin such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, and a propylene glycol diglycidyl ether, and a polypropylene glycol diglycidyl ether. The epoxy group-containing epoxy resin such as an alkyl glycol type epoxy resin or polymethyl (glycidoxypropyl) alkane is not limited thereto. Specifically, EPICLON (registered trademark) 850-S, EPICLON (registered trademark) HP-4032, EPICLON (registered trademark) HP-7200, EPICLON (registered trademark) HP-820, EPICLON (registered trademark) HP-4700 EPICLON (registered trademark) EXA-4710, EPICLON (registered trademark) HP-4770, EPICLON (registered trademark) EXA-859CRP, EPICLON (registered trademark) EXA-1514, EPICLON (registered trademark) EXA-4880, EPICLON (registered trademark) ) EXA-4850-150, EPICLON EXA-4850-1000, EPICLON (registered trademark) EXA-4816, EPICLON (registered trademark) EXA-4822 (above, trade name, manufactured by DIC Corporation), RIKARESIN (registered trademark) BEO-60E (trade name, manufactured by New Japan Chemical Co., Ltd.), EP-4003S, EP-4000S (above, trade name, manufactured by ADEKA CORPORATION). Among these, an epoxy resin containing a polyethylene oxide group is preferable from the viewpoint of suppressing warpage and excellent heat resistance. For example, EPICLON (registered trademark) EXA-4880, EPICLON (registered trademark) EXA-4822, and RIKARESIN (registered trademark) BEO-60E contain a polyethylene oxide group, and therefore are preferable.

環氧化合物的含量相對於聚醯亞胺前驅物100質量份係5~50質量份為較佳,10~50質量份為更佳,10~40質量份為進一步較佳。環氧化合物的含量只要係5質量份以上,則能夠抑制所得到之硬化膜的翹曲,且只要係50質量份以下,則能夠進一步抑制因硬化時的回焊引起之圖案埋入。The content of the epoxy compound is preferably 5 to 50 parts by mass based on 100 parts by mass of the polyimide precursor, more preferably 10 to 50 parts by mass, still more preferably 10 to 40 parts by mass. When the content of the epoxy compound is 5 parts by mass or more, the warpage of the obtained cured film can be suppressed, and if it is 50 parts by mass or less, pattern embedding due to reflow at the time of hardening can be further suppressed.

(氧雜環丁烷化合物(具有氧雜環丁基之化合物)) 作為氧雜環丁烷化合物,能夠列舉於一分子中具有兩個以上的氧雜環丁烷環之化合物、3-乙基-3-羥甲氧雜環丁烷、1,4-雙{[(3-乙基-3-氧雜環丁基)甲氧基]甲基}苯、3-乙基-3-(2-乙基己基甲基)氧雜環丁烷、1,4-苯二羧酸-雙[(3-乙基-3-氧雜環丁基)甲基]酯等。作為具體的例,能夠適宜地使用TOAGOSEI CO.,LTD.製ARON OXETANE系列(例如,OXT-121、OXT-221、OXT-191、OXT-223),該些可以單獨使用,或者可以混合使用兩種以上。(Oxetane compound (compound having oxetanyl group)) The oxetane compound can be exemplified by a compound having two or more oxetane rings in one molecule, 3-ethyl 3-hydroxymethoxyoxetane, 1,4-bis{[(3-ethyl-3-oxetanyl)methoxy]methyl}benzene, 3-ethyl-3-(2 -ethylhexylmethyl)oxetane, 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester, and the like. As a specific example, the ARON OXETANE series (for example, OXT-121, OXT-221, OXT-191, and OXT-223) manufactured by TOAGOSEI CO., LTD. can be suitably used, and these may be used alone or in combination. More than one species.

氧雜環丁烷化合物的含量相對於聚醯亞胺前驅物100質量份係5~50質量份為較佳,10~50質量份為更佳,10~40質量份為進一步較佳。The content of the oxetane compound is preferably 5 to 50 parts by mass based on 100 parts by mass of the polyimide precursor, more preferably 10 to 50 parts by mass, still more preferably 10 to 40 parts by mass.

(苯并㗁𠯤化合物(具有苯并噁唑基之化合物)) 苯并㗁𠯤化合物因源自開環加成反應之交聯反應而於硬化時不產生脫氣,進而減少熱收縮而抑制產生翹曲,因此為較佳。(Benzoindole compound (compound having a benzoxazolyl group)) The benzofluorene compound does not generate degassing upon hardening due to a crosslinking reaction derived from a ring-opening addition reaction, thereby reducing heat shrinkage and suppressing generation. Warpage is therefore preferred.

作為苯并㗁𠯤化合物的較佳的例,可列舉B-a型苯并㗁𠯤、B-m型苯并㗁𠯤(以上為商品名,Shikoku Chemicals Corporation製)、聚羥基苯乙烯樹脂的苯并㗁𠯤加成物、酚醛清漆型二氫苯并㗁𠯤化合物。該些可以單獨使用,或者可以混合兩種以上。Preferable examples of the benzofluorene compound include Ba type benzopyrene, Bm type benzopyrene (the above-mentioned trade name, manufactured by Shikoku Chemicals Corporation), and benzopyrene of polyhydroxystyrene resin. A product, a novolac type dihydrobenzopyrene compound. These may be used alone or in combination of two or more.

苯并㗁𠯤化合物的含量相對於聚醯亞胺前驅物100質量份係5~50質量份為較佳,10~50質量份為更佳,10~40質量份為進一步較佳。The content of the benzofluorene compound is preferably 5 to 50 parts by mass based on 100 parts by mass of the polyimide precursor, more preferably 10 to 50 parts by mass, and still more preferably 10 to 40 parts by mass.

<<遷移抑制劑>> 感光性樹脂組成物還包含遷移抑制劑為較佳。藉由包含遷移抑制劑,能夠有效地抑制源自金屬層(金屬配線)的金屬離子轉移到感光性樹脂組成物層內。 作為遷移抑制劑,並無特別限制,可列舉具有雜環(吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡唑環、異噁唑環、異噻唑環、四唑環、吡啶環、噠嗪環、嘧啶環、吡嗪環、哌啶環、哌嗪環、嗎啉環、2H-吡喃環及6H-吡喃環、三嗪環)之化合物、具有硫脲類及巰基之化合物、受阻酚系化合物、水楊酸衍生物系化合物、醯肼衍生物系化合物。尤其,能夠較佳地使用三唑、苯并三唑等三唑系化合物、四唑、苯并四唑等四唑系化合物。<<Migration inhibitor>> The photosensitive resin composition further preferably contains a migration inhibitor. By including the migration inhibitor, it is possible to effectively suppress transfer of metal ions derived from the metal layer (metal wiring) into the photosensitive resin composition layer. The migration inhibitor is not particularly limited, and examples thereof include a heterocyclic ring (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole). a compound of a ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a piperidine ring, a piperazine ring, a morpholine ring, a 2H-pyran ring, a 6H-pyran ring, a triazine ring), having a thiourea A compound, a hindered phenol compound, a salicylic acid derivative compound, and an anthracene derivative compound. In particular, a triazole compound such as triazole or benzotriazole, a tetrazole compound such as tetrazole or benzotetrazole can be preferably used.

又,亦能夠使用捕捉鹵素離子等陰離子之離子捕捉劑。Further, an ion trapping agent that traps an anion such as a halogen ion can also be used.

作為其他遷移抑制劑,能夠使用日本特開2013-15701號公報的0094段中所記載之防鏽劑、日本特開2009-283711號公報的0073~0076段中所記載之化合物、日本特開2011-59656號公報的0052段中所記載之化合物、日本特開2012-194520號公報的0114、0116段及0118段中所記載之化合物等。As the other migration inhibitor, the rust inhibitor described in paragraph 0094 of JP-A-2013-15701, and the compound described in paragraphs 0073 to 0076 of JP-A-2009-283711 can be used. A compound described in paragraph 0052 of JP-A-59656, and a compound described in paragraphs 0114, 0116, and 0118 of JP-A-2012-194520.

作為遷移抑制劑的具體例,可列舉下述化合物。 [化學式48] Specific examples of the migration inhibitor include the following compounds. [Chemical Formula 48]

當感光性樹脂組成物具有遷移抑制劑時,遷移抑制劑的含量相對於感光性樹脂組成物的總固體成分係0.01~5.0質量%為較佳,0.05~2.0質量%為更佳,0.1~1.0質量%為進一步較佳。 遷移抑制劑可以係僅為一種,亦可以係兩種以上。當遷移抑制劑係兩種以上時,其合計係上述範圍為較佳。When the photosensitive resin composition has a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0% by mass based on the total solid content of the photosensitive resin composition, more preferably 0.05 to 2.0% by mass, and 0.1 to 1.0. The mass % is further preferred. The migration inhibitor may be one type or two or more types. When the migration inhibitor is two or more types, the total range is preferably the above range.

<<聚合抑制劑>> 本發明的組成物包含聚合抑制劑為較佳。 作為聚合抑制劑,例如可適宜地使用對苯二酚、對甲氧基苯酚、二-第三丁基-對甲酚、鄰苯三酚、對-第三丁基鄰苯二酚、對苯醌、二苯基-對苯醌、4,4’硫代雙(3-甲基-6-第三丁基苯酚)、2,2’亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基-N-苯基羥基胺鋁鹽、吩噻嗪、N-亞硝基二苯胺、N-苯基萘胺、伸乙基二胺四乙酸、1,2-環己二胺四乙酸、乙二醇醚二胺四乙酸、2,6-二-第三丁基-4-甲基苯酚、5-亞硝基-8-羥基喹啉、1-亞硝基-2-萘酚、2-亞硝基-1-萘酚、2-亞硝基-5-(N-乙基-N-磺基丙基胺)苯酚、N-亞硝基-N-(1-萘基)羥胺銨鹽、雙(4-羥基-3,5-第三丁基)苯基甲烷等。又,亦能夠使用日本特開2015-127817號公報的0060段中所記載之聚合抑制劑及國際公開WO2015/125469號的0031~0046段中所記載之化合物。 又,還能夠使用下述化合物(Me為甲基)。 [化學式49]當本發明的組成物具有聚合抑制劑時,聚合抑制劑的含量相對於本發明的組成物的總固體成分係0.01~5質量%為較佳。 聚合抑制劑可以僅為一種,亦可以為兩種以上。當聚合抑制劑為兩種以上時,其合計為上述範圍為較佳。<<Polymerization inhibitor>> The composition of the present invention preferably contains a polymerization inhibitor. As the polymerization inhibitor, for example, hydroquinone, p-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, p-tert-butyl catechol, p-benzene can be suitably used. Bismuth, diphenyl-p-benzoquinone, 4,4' thiobis(3-methyl-6-tert-butylphenol), 2,2' methylenebis(4-methyl-6-third Butylphenol), N-nitroso-N-phenylhydroxylamine aluminum salt, phenothiazine, N-nitrosodiphenylamine, N-phenylnaphthylamine, ethylenediaminetetraacetic acid, 1,2 - cyclohexanediaminetetraacetic acid, glycol ether diamine tetraacetic acid, 2,6-di-tert-butyl-4-methylphenol, 5-nitroso-8-hydroxyquinoline, 1-nitrogen 2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamine)phenol, N-nitroso-N- (1-Naphthyl)hydroxylamine ammonium salt, bis(4-hydroxy-3,5-t-butyl)phenylmethane or the like. Further, the polymerization inhibitor described in paragraph 0060 of JP-A-2015-127817 and the compound described in paragraphs 0031 to 0046 of International Publication WO2015/125469 can also be used. Further, the following compound (Me is a methyl group) can also be used. [Chemical Formula 49] When the composition of the present invention has a polymerization inhibitor, the content of the polymerization inhibitor is preferably from 0.01 to 5% by mass based on the total solid content of the composition of the present invention. The polymerization inhibitor may be used alone or in combination of two or more. When the polymerization inhibitor is two or more kinds, the total range is preferably in the above range.

<<金屬黏著性改良劑>> 本發明的組成物包含用於提高與使用於電極或配線等之金屬材料的黏附性之金屬黏著性改良劑為較佳。作為金屬黏著性改良劑,可列舉矽烷偶聯劑等。<<Metal Adhesive Improver>> The composition of the present invention preferably contains a metal adhesion improver for improving the adhesion to a metal material such as an electrode or a wiring. The metal adhesion improving agent may, for example, be a decane coupling agent.

作為矽烷偶聯劑的例,可列舉日本特開2014-191002號公報的0062~0073段中所記載之化合物、國際公開WO2011/080992A1號的0063~0071段中所記載之化合物、日本特開2014-191252號公報的0060~0061段中所記載之化合物、日本特開2014-41264號公報的0045~0052段中所記載之化合物、國際公開WO2014/097594號的0055段中所記載之化合物。又,如日本特開2011-128358號公報的0050~0058段中所記載那樣使用不同的兩種以上的矽烷偶聯劑亦為較佳。又,矽烷偶聯劑使用下述化合物亦為較佳。以下式中,Et表示乙基。 [化學式50] Examples of the decane coupling agent include the compounds described in paragraphs 0062 to 0073 of JP-A-2014-191002, and the compounds described in paragraphs 0063 to 0071 of International Publication WO2011/080992A1, and JP-A-2014. A compound described in paragraphs 0060 to 0061 of JP-A No. 191252, a compound described in paragraphs 0045 to 0052 of JP-A-2014-41264, and a compound described in paragraph 0055 of International Publication WO2014/097594. Further, it is also preferred to use two or more different decane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. Further, it is also preferred to use the following compounds as the decane coupling agent. In the following formula, Et represents an ethyl group. [Chemical Formula 50]

又,金屬黏著性改良劑還能夠使用日本特開2014-186186號公報的0046~0049段中所記載之化合物、日本特開2013-072935號公報的0032~0043段中所記載之硫化物。In addition, the metal-adhesive improver can also use the compound described in paragraphs 0046 to 0049 of JP-A-2014-186186, and the sulfides described in paragraphs 0032 to 0043 of JP-A-2013-072935.

金屬黏著性改良劑的含量相對於聚醯亞胺前驅物100質量份較佳為0.1~30質量份,更佳為0.5~15質量份的範圍。藉由設為0.1質量份以上,硬化製程後的硬化膜與金屬層的黏附性變良好,藉由設為30質量份以下,硬化製程後的硬化膜的耐熱性、機械特性變良好。金屬黏著性改良劑可以係僅為一種,亦可以係兩種以上。當使用兩種以上時,其合計為上述範圍為較佳。The content of the metal adhesion improver is preferably 0.1 to 30 parts by mass, more preferably 0.5 to 15 parts by mass, per 100 parts by mass of the polyimide intermediate. When the amount is 0.1 part by mass or more, the adhesion between the cured film and the metal layer after the curing process is improved, and the heat resistance and mechanical properties of the cured film after the curing process are improved by 30 parts by mass or less. The metal adhesion improver may be used alone or in combination of two or more. When two or more types are used, it is preferable that they are in the above range.

<<鹼產生劑>> 本發明中所使用之組成物可以包含鹼產生劑。鹼產生劑可以係熱鹼產生劑,亦可以係光鹼產生劑,至少包含光鹼產生劑為較佳。<<Base generator>> The composition used in the present invention may contain a base generator. The alkali generating agent may be a hot base generating agent or a photobase generating agent, and at least a photobase generating agent is preferred.

<<<熱鹼產生劑>>> 作為熱鹼產生劑,其種類並無特別限定,含有包含選自加熱至40℃以上時產生鹼之酸性化合物及具有pKa1為0~4的陰離子與銨陽離子之銨鹽中之至少一種之熱鹼產生劑為較佳。其中,pKa1表示多元酸的第一質子的解離常數(Ka)的對數標記(-Log10 Ka)。 藉由調配該種化合物,能夠於低溫下進行聚醯亞胺前驅物的環化反應,並且能夠形成穩定性更優異之組成物。又,熱鹼產生劑只要不加熱便不會產生鹼,因此即便與聚醯亞胺前驅物共存,亦能夠抑制保存中的聚醯亞胺前驅物的環化,從而保存穩定性優異。<<<Thermal base generator>>> The type of the hot base generator is not particularly limited, and includes an acidic compound containing a base selected from the group consisting of heating to 40 ° C or higher and an anion and ammonium cation having a pKa1 of 0 to 4. A hot base generator of at least one of the ammonium salts is preferred. Wherein, pKa1 represents a logarithmic marker (-Log 10 Ka) of the dissociation constant (Ka) of the first proton of the polybasic acid. By compounding such a compound, the cyclization reaction of the polyimide precursor can be carried out at a low temperature, and a composition having more excellent stability can be formed. Further, since the hot base generator does not generate an alkali without heating, even if it is coexisted with the polyimide precursor, cyclization of the polyimide precursor during storage can be suppressed, and the storage stability is excellent.

本發明中的熱鹼產生劑包含選自加熱至40℃以上時產生鹼之酸性化合物(A1)及具有pKa1為0~4的陰離子和銨陽離子之銨鹽(A2)中之至少一種。 上述酸性化合物(A1)及上述銨鹽(A2)於加熱時產生鹼,因此藉由從該些化合物產生之鹼,能夠促進聚醯亞胺前驅物的環化反應,並能夠於低溫下進行聚醯亞胺前驅物的環化。又,該些化合物即使與藉由鹼環化並硬化之聚醯亞胺前驅物共存,只要不加熱則幾乎不會進行聚醯亞胺前驅物的環化,因此能夠穩定地製備優異之聚醯亞胺前驅物組成物。 此外,本說明書中,酸性化合物是指,將1g化合物採集到容器中,添加50ml離子交換水與四氫呋喃的混合液(質量比為水/四氫呋喃=1/4),於室溫下攪拌1小時,並利用pH計,於20℃下對該溶液進行測定之值小於7之化合物。The thermal base generator in the present invention contains at least one selected from the group consisting of an acidic compound (A1) which generates a base upon heating to 40 ° C or higher, and an ammonium salt (A2) having an anion of an anion of pKa1 of 0 to 4 and an ammonium cation. Since the acidic compound (A1) and the ammonium salt (A2) generate a base upon heating, the cyclization reaction of the polyimide precursor can be promoted by the base derived from the compounds, and the polymerization can be carried out at a low temperature. Cyclization of the quinone imine precursor. Further, even if these compounds coexist with the polyimine precursor which is cyclized and hardened by alkali, the cyclization of the polyimide precursor is hardly carried out without heating, so that excellent aggregation can be stably produced. Imine precursor composition. Further, in the present specification, the acidic compound means that 1 g of the compound is collected in a container, and a mixture of 50 ml of ion-exchanged water and tetrahydrofuran (mass ratio of water / tetrahydrofuran = 1/4) is added, and the mixture is stirred at room temperature for 1 hour. The solution was measured to have a value of less than 7 at 20 ° C using a pH meter.

本發明中,酸性化合物(A1)及銨鹽(A2)的鹼產生溫度係40℃以上為較佳,120~200℃為更佳。鹼產生溫度的上限係190℃以下為較佳,180℃以下為更佳,165℃以下為進一步較佳。鹼產生溫度的下限係130℃以上為較佳,135℃以上為更佳。 若酸性化合物(A1)及銨鹽(A2)的鹼產生溫度係120℃以上,則於保存中不易產生鹼,因此能夠穩定地製備優異之聚醯亞胺前驅物組成物。若酸性化合物(A1)及銨鹽(A2)的鹼產生溫度係200℃以下,則能夠降低聚醯亞胺前驅物的環化溫度。關於鹼產生溫度,例如利用差示掃描量熱法,於耐壓膠囊中以5℃/分鐘將化合物加熱至250℃,讀取溫度最低之發熱峰的峰溫度,且將峰溫度作為鹼產生溫度而能夠進行測定。In the present invention, the alkali generating temperature of the acidic compound (A1) and the ammonium salt (A2) is preferably 40 ° C or higher, more preferably 120 to 200 ° C. The upper limit of the base generation temperature is preferably 190 ° C or lower, more preferably 180 ° C or lower, and further preferably 165 ° C or lower. The lower limit of the base generation temperature is preferably 130 ° C or more, more preferably 135 ° C or more. When the alkali production temperature of the acidic compound (A1) and the ammonium salt (A2) is 120 ° C or more, the alkali is less likely to be generated during storage, and therefore, an excellent polyimide intermediate precursor composition can be stably produced. When the base production temperature of the acidic compound (A1) and the ammonium salt (A2) is 200 ° C or lower, the cyclization temperature of the polyimide precursor can be lowered. Regarding the alkali generation temperature, for example, by differential scanning calorimetry, the compound is heated to 250 ° C at 5 ° C / min in a pressure resistant capsule, the peak temperature of the exothermic peak having the lowest temperature is read, and the peak temperature is taken as the alkali generation temperature. And the measurement can be performed.

本發明中,藉由熱鹼產生劑而產生之鹼係第2胺或第3胺為較佳,第3胺為更佳。第3胺由於鹼性高,因此能夠進一步降低聚醯亞胺前驅物的環化溫度。又,藉由熱鹼產生劑而產生之鹼的沸點係80℃以上為較佳,100℃以上為更佳,140℃以上為進一步較佳。又,所產生之鹼的分子量係80~2000為較佳。下限係100以上為更佳。上限係500以下為更佳。此外,分子量的值係從結構式求出之理論值。In the present invention, the base-based second amine or the third amine produced by the hot base generator is preferred, and the third amine is more preferred. Since the third amine has a high basicity, the cyclization temperature of the polyimide precursor can be further lowered. Further, the alkalinity of the base produced by the hot alkali generating agent is preferably 80 ° C or more, more preferably 100 ° C or more, and still more preferably 140 ° C or more. Further, the molecular weight of the base to be produced is preferably from 80 to 2,000. The lower limit is preferably 100 or more. The upper limit is preferably 500 or less. Further, the value of the molecular weight is a theoretical value obtained from the structural formula.

本發明中,上述酸性化合物(A1)包含選自銨鹽及後述之由式(101)或(102)表示之化合物中之一種以上為較佳。In the present invention, the acidic compound (A1) is preferably one or more selected from the group consisting of an ammonium salt and a compound represented by the formula (101) or (102) which will be described later.

本發明中,上述銨鹽(A2)係酸性化合物為較佳。此外,上述銨鹽(A2)可以係包含加熱至40℃以上(較佳為120~200℃)時產生鹼之酸性化合物之化合物,亦可以係除了加熱至40℃以上(較佳為120~200℃)時產生鹼之酸性化合物以外的化合物。In the present invention, the above ammonium salt (A2) is preferably an acidic compound. Further, the above ammonium salt (A2) may be a compound containing an acidic compound which generates a base upon heating to 40 ° C or higher (preferably 120 to 200 ° C), or may be heated to 40 ° C or higher (preferably 120 to 200). At ° C), a compound other than the acidic compound of the base is produced.

<<<<銨鹽>>>> 本發明中,銨鹽是指,由下述式(101)或式(102)表示之銨陽離子與陰離子的鹽。陰離子可以與銨陽離子的任一部分經由共價鍵而鍵結,亦可以於銨陽離子的分子外具有,但於銨陽離子的分子外具有為較佳。此外,陰離子於銨陽離子的分子外具有是指,銨陽離子與陰離子未經由共價鍵鍵結之情況。以下,還將陽離子部的分子外的陰離子稱為抗衡陰離子。 式(101) 式(102) [化學式51]式中R1 ~R6 分別獨立地表示氫原子或烴基,R7 表示烴基。R1 與R2 、R3 與R4 、R5 與R6 、R5 與R7 可以分別鍵結而形成環。<<<<Ammonium Salt>>>> In the present invention, the ammonium salt refers to a salt of an ammonium cation and an anion represented by the following formula (101) or formula (102). The anion may be bonded to any part of the ammonium cation via a covalent bond or may be present outside the molecule of the ammonium cation, but is preferably outside the molecule of the ammonium cation. Further, the fact that the anion is outside the molecule of the ammonium cation means that the ammonium cation and the anion are not bonded via a covalent bond. Hereinafter, the extra-molecular anion of the cation portion is also referred to as a counter anion. Formula (101) Formula (102) [Chemical Formula 51] In the formula, R 1 to R 6 each independently represent a hydrogen atom or a hydrocarbon group, and R 7 represents a hydrocarbon group. R 1 and R 2 , R 3 and R 4 , R 5 and R 6 , and R 5 and R 7 may be bonded to each other to form a ring.

銨陽離子由下述式(Y1-1)~(Y1-5)中的任一個表示為較佳。 [化學式52] The ammonium cation is preferably represented by any one of the following formulae (Y1-1) to (Y1-5). [Chemical Formula 52]

式(Y1-1)~(Y1-5)中,R101 表示n價有機基,R1 及R7 與式(101)或式(102)中的R1 及R7 定義相同。 式(Y1-1)~(Y1-4)中,Ar101 及Ar102 分別獨立地表示芳基,n表示1以上的整數,m表示0~5的整數。In the formulae (Y1-1) to (Y1-5), R 101 represents an n-valent organic group, and R 1 and R 7 have the same meanings as R 1 and R 7 in the formula (101) or the formula (102). In the formulae (Y1-1) to (Y1-4), Ar 101 and Ar 102 each independently represent an aryl group, n represents an integer of 1 or more, and m represents an integer of 0 to 5.

本實施形態中,銨鹽具有pKa1為0~4之陰離子和銨陽離子為較佳。陰離子的pKa1的上限係3.5以下為更佳,3.2以下為進一步較佳。下限係0.5以上為較佳,1.0以上為更佳。若陰離子的pKa1係上述範圍,則能夠於進一步低溫下對含雜環聚合物前驅物進行環化,進而能夠提高組成物的穩定性。若pKa1為4以下,則熱鹼產生劑的穩定性良好,能夠於未加熱之情況下抑制產生鹼,且組成物的穩定性良好。若pKa1為0以上,則所產生之鹼不易被中和,含雜環聚合物前驅物等的環化效率良好。 關於陰離子的種類,選自羧酸根陰離子、苯酚陰離子、磷酸根陰離子及硫酸根陰離子中之一種為較佳,從兼備鹽的穩定性和熱分解性的原因考慮,羧酸根陰離子為更佳。亦即,銨鹽係銨陽離子與羧酸根陰離子的鹽為更佳。 羧酸根陰離子係具有兩個以上的羧基之2價以上的羧酸的陰離子為較佳,2價羧酸的陰離子為更佳。依該態樣,能夠設為能夠進一步提高組成物的穩定性、硬化性及顯影性之熱鹼產生劑。尤其,藉由使用2價羧酸的陰離子,能夠進一步提高組成物的穩定性、硬化性及顯影性。 本實施形態中,羧酸根陰離子係pKa1為4以下的羧酸的陰離子為較佳。pKa1係3.5以下為更佳,3.2以下為進一步較佳。依該態樣,能夠進一步提高組成物的穩定性。 其中,pKa1表示酸的第一質子的解離常數的倒數的對數,並能夠參閱有機結構的物理鑑定法(Determination of Organic Structures by Physical Methods)(作者:Brown, H. C., McDaniel, D. H., Hafliger, O., Nachod, F. C.; 編輯:Braude, E. A., Nachod, F. C.; 美國學術出版社(Academic Press, New York), 1955)或用於生化研究的資料(Data for Biochemical Research)(作者:Dawson, R.M.C.et al; Oxford, 牛津,克拉倫登出版社(Clarendon Press), 1959)中所記載之值。關於該些文獻中所記載之化合物,使用利用ACD/pKa(ACD/Labs製)的軟件並藉由結構式計算之值。In the present embodiment, the ammonium salt preferably has an anion having an pKa1 of 0 to 4 and an ammonium cation. The upper limit of the pKa1 of the anion is preferably 3.5 or less, and more preferably 3.2 or less. The lower limit is preferably 0.5 or more, more preferably 1.0 or more. When the pKa1 of the anion is in the above range, the heterocyclic-containing polymer precursor can be cyclized at a lower temperature, and the stability of the composition can be improved. When pKa1 is 4 or less, the stability of the thermal base generator is good, and the generation of alkali can be suppressed without heating, and the stability of the composition is good. When pKa1 is 0 or more, the produced alkali is not easily neutralized, and the cyclization efficiency of the heterocyclic-containing polymer precursor or the like is good. The type of the anion is preferably one selected from the group consisting of a carboxylate anion, a phenol anion, a phosphate anion, and a sulfate anion, and the carboxylate anion is more preferable from the viewpoint of the stability of the salt and the thermal decomposition property. That is, a salt of an ammonium salt-based ammonium cation and a carboxylate anion is more preferable. The carboxylate anion is preferably an anion having a carboxylic acid having two or more valences of two or more carboxyl groups, more preferably an anion of a divalent carboxylic acid. In this case, a hot alkali generating agent capable of further improving the stability, curability, and developability of the composition can be used. In particular, by using an anion of a divalent carboxylic acid, the stability, hardenability, and developability of the composition can be further improved. In the present embodiment, an anion of a carboxylic acid having a carboxylate anion such as pKa1 of 4 or less is preferred. The pKa1 is preferably 3.5 or less, and more preferably 3.2 or less. In this way, the stability of the composition can be further improved. Wherein, and pKa1 representation into a number of isolated reciprocal constant of the first proton acid, and can refer to a physical identification method (Determination of Organic Structures by Physical Methods) the organic structure (OF: Brown, HC, McDaniel, DH, Hafliger, O. , Nachod, FC; editor: Braude, EA, Nachod, FC; US academic publishing house (academic Press, New York), 1955), or for information on biochemical studies (data for biochemical Research) (author: Dawson, RMCet al ; Oxford, Oxford, Clarendon Press, 1959). For the compounds described in these documents, the values calculated by the structural formula using software of ACD/pKa (manufactured by ACD/Labs) are used.

羧酸根陰離子係由下述式(X1)表示為較佳。 [化學式53]式(X1)中,EWG表示吸電子基。The carboxylate anion is preferably represented by the following formula (X1). [Chemical Formula 53] In the formula (X1), EWG represents an electron withdrawing group.

本實施形態中,吸電子基是指,哈米特(Hammett)取代基常數σm表示正的值者。其中,關於σm,於都野雄甫的總論、有機合成化學協會誌的第23卷第8號(1965)P.631-642中有詳細說明。此外,本實施形態中的吸電子基並不限定於上述文獻中所記載之取代基。 作為σm表示正的值之取代基的例,例如可列舉CF3 基(σm=0.43)、CF3 CO基(σm=0.63)、HC≡C基(σm=0.21)、CH2 =CH基(σm=0.06)、Ac基(σm=0.38)、MeOCO基(σm=0.37)、MeCOCH=CH基(σm=0.21)、PhCO基(σm=0.34)、H2 NCOCH2 基(σm=0.06)等。此外,Me表示甲基,Ac表示乙醯基,Ph表示苯基(以下,相同)。In the present embodiment, the electron-withdrawing group means that the Hammett substituent constant σm indicates a positive value. Among them, σm is described in detail in the general theory of Tono Hiroshi, Vol. 23, No. 8 (1965) P.631-642. Further, the electron-withdrawing group in the present embodiment is not limited to the substituents described in the above documents. Examples of the substituent in which σm represents a positive value include a CF 3 group (σm = 0.43), a CF 3 CO group (σm = 0.63), a HC ≡ C group (σm = 0.21), and a CH 2 = CH group ( Σm=0.06), Ac group (σm=0.38), MeOCO group (σm=0.37), MeCOCH=CH group (σm=0.21), PhCO group (σm=0.34), H 2 NCOCH 2 group (σm=0.06), etc. . Further, Me represents a methyl group, Ac represents an ethyl group, and Ph represents a phenyl group (hereinafter, the same).

EWG係由下述式(EWG-1)~(EWG-6)表示之基團為較佳。 [化學式54]式(EWG-1)~(EWG-6)中,Rx1 ~Rx3 分別獨立地表示氫原子、烷基、烯基、芳基、羥基或羧基,Ar表示芳香族基。The EWG is preferably a group represented by the following formulas (EWG-1) to (EWG-6). [Chemical Formula 54] In the formulae (EWG-1) to (EWG-6), R x1 to R x3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, a hydroxyl group or a carboxyl group, and Ar represents an aromatic group.

本實施形態中,羧酸根陰離子係由下述式(XA)表示為較佳。 式(XA) [化學式55]式(XA)中,L10 表示單鍵或選自伸烷基、伸烯基、芳香族基、-NRX -及它們的組合中之2價連結基,RX 表示氫原子、烷基、烯基或芳基。In the present embodiment, the carboxylate anion is preferably represented by the following formula (XA). Formula (XA) [Chemical Formula 55] In the formula (XA), L 10 represents a single bond or a divalent linking group selected from an alkyl group, an alkenyl group, an aromatic group, -NR X - and a combination thereof, and R X represents a hydrogen atom, an alkyl group, Alkenyl or aryl.

作為羧酸根陰離子的具體例,可列舉順丁烯二酸根陰離子、鄰苯二甲酸根陰離子、N-苯基亞胺基二乙酸根陰離子及草酸根陰離子。 熱鹼產生劑的詳細內容能夠參閱日本特開2016-027357號公報的0021~0077段的記載,並將該些內容編入本說明書中。 作為熱鹼產生劑,例示以下化合物。 [化學式56][化學式57] Specific examples of the carboxylate anion include a maleate anion, a phthalate anion, an N-phenyliminodiacetate anion, and an oxalate anion. The details of the hot base generator can be described in paragraphs 0021 to 0077 of JP-A-2016-027357, and these contents are incorporated in the present specification. As the thermal base generator, the following compounds are exemplified. [Chemical Formula 56] [Chemical Formula 57]

[化學式58][化學式59] [Chemical Formula 58] [Chemical Formula 59]

當使用熱鹼產生劑時,組成物中的熱鹼產生劑的含量相對於組成物的總固體成分係0.1~50質量%為較佳。下限係0.5質量%以上為更佳,1質量%以上為進一步較佳。上限係30質量%以下為更佳,20質量%以下為進一步較佳。 熱鹼產生劑能夠使用一種或兩種以上。當使用兩種以上時,合計量為上述範圍為較佳。When a hot base generator is used, the content of the hot base generator in the composition is preferably from 0.1 to 50% by mass based on the total solid content of the composition. The lower limit is preferably 0.5% by mass or more, and more preferably 1% by mass or more. The upper limit is preferably 30% by mass or less, more preferably 20% by mass or less. The hot base generator can be used alone or in combination of two or more. When two or more types are used, it is preferred that the total amount is the above range.

<<<光鹼產生劑>>> 本發明中所使用之感光性樹脂組成物可以包含光鹼產生劑。光鹼產生劑是指,藉由曝光而產生鹼者,於常溫常壓的通常的條件下不顯示活性,但只要是作為外部刺激而進行電磁波的照射和加熱時,產生鹼(鹼性物質)者,則並無特別限定。藉由曝光而產生之鹼作為使聚醯亞胺前驅物藉由加熱而硬化時的觸媒而發揮作用,因此能夠於負型中適宜地使用。<<<Photobase generator>>> The photosensitive resin composition used in the present invention may contain a photobase generator. The photobase generator is a substance which generates an alkali by exposure, and does not exhibit activity under normal conditions of normal temperature and normal pressure. However, when electromagnetic waves are irradiated and heated as an external stimulus, an alkali (basic substance) is generated. There is no particular limitation on the person. The base produced by the exposure functions as a catalyst for curing the polyimide precursor by heating, and therefore can be suitably used in a negative type.

本發明中,作為光鹼產生劑能夠使用公知者。例如,如M.Shirai, and M.Tsunooka, Prog.Polym.Sci.,21,1(1996);角岡正弘,高分子加工,46,2(1997);C.Kutal,Coord.Chem.Rev.,211,353(2001);Y.Kaneko,A.Sarker, and D.Neckers,Chem.Mater.,11,170(1999);H.Tachi,M.Shirai, and M.Tsunooka,J.Photopolym.Sci.Technol.,13,153(2000);M.Winkle, and K.Graziano,J.Photopolym.Sci.Technol.,3,419(1990);M.Tsunooka,H.Tachi, and S.Yoshitaka,J.Photopolym.Sci.Technol.,9,13(1996);K.Suyama,H.Araki,M.Shirai,J.Photopolym.Sci.Technol.,19,81(2006)中所記載,能夠列舉過渡金屬化合物錯合物、具有銨鹽等結構者、如藉由脒部分與羧酸形成鹽而被潛在化者般藉由鹼成分形成鹽而被中和之離子性化合物、胺甲酸酯衍生物、肟酯衍生物、醯基化合物等藉由胺基甲酸酯鍵或肟鍵等而鹼成分被潛在化之非離子性化合物。In the present invention, a known one can be used as the photobase generator. For example, such as M. Shirai, and M. Tsunooka, Prog. Polym. Sci., 21, 1 (1996); Kakuoka Masahiro, Polymer Processing, 46, 2 (1997); C. Kutal, Coord. Chem. Rev ., 211, 353 (2001); Y. Kaneko, A. Sarker, and D. Neckers, Chem. Mater., 11, 170 (1999); H. Tachi, M. Shirai, and M. Tsunooka, J. Photopolym. Sci. Technol , 13, 153 (2000); M. Winkle, and K. Graziano, J. Photopolym. Sci. Technol., 3, 419 (1990); M. Tsunooka, H. Tachi, and S. Yoshitaka, J. Photopolym. Sci. Technol , 9, 13, (1996); K. Suyama, H. Araki, M. Shirai, J. Photopolym. Sci. Technol., 19, 81 (2006), which can be cited as a transition metal compound complex, having An ionic compound, a carbamate derivative, an oxime ester derivative, or a hydrazine neutralized by a structure such as an ammonium salt, such as a salt formed by a hydrazine moiety and a carboxylic acid, which is formed by a salt component by a latent component. A nonionic compound in which an alkali component is latent by a urethane bond or a hydrazone bond or the like.

作為由光鹼產生劑產生之鹼性物質,並無特別限定,可列舉具有胺基之化合物、尤其單胺、二胺等多胺或脒等。 所產生之鹼性物質係具有鹼性更高之胺基之化合物為較佳。其原因為,相對於聚醯亞胺前驅物的醯亞胺化中的脫水縮合反應等的觸媒作用較強,從而添加更少的量便能夠於更低的溫度下顯現脫水縮合反應等中的觸媒效果。亦即,由於所產生之鹼性物質的觸媒效果大,因此作為負型感光性樹脂組成物的表觀的感度得以提高。 從上述觸媒效果的觀點考慮,脒、脂肪族胺為較佳。 作為本發明中所使用之光鹼產生劑,包含芳香環,且所產生之鹼性物質具有胺基之化合物為較佳。The basic substance produced by the photobase generator is not particularly limited, and examples thereof include a compound having an amine group, particularly a polyamine such as a monoamine or a diamine, or hydrazine. The resulting basic substance is preferably a compound having a more basic amino group. The reason for this is that the catalytic action such as the dehydration condensation reaction in the ruthenium imidization of the polyimide precursor is strong, and the addition of a smaller amount enables the dehydration condensation reaction to be exhibited at a lower temperature. Catalytic effect. That is, since the catalytic effect of the generated alkaline substance is large, the apparent sensitivity as a negative photosensitive resin composition is improved. From the viewpoint of the above catalyst effect, hydrazine and an aliphatic amine are preferred. As the photobase generator used in the present invention, a compound containing an aromatic ring and having a basic substance having an amine group is preferred.

作為本發明所涉及之光鹼產生劑,例如可列舉如日本特開2009-80452號公報及國際公開第2009/123122號小冊子中揭示那樣具有肉桂酸醯胺結構之光鹼產生劑、如日本特開2006-189591號公報及日本特開2008-247747號公報中揭示那樣具有胺基甲酸酯結構之光鹼產生劑、如日本特開2007-249013號公報及日本特開2008-003581號公報中揭示那樣具有肟結構、胺基甲醯肟結構之光鹼產生劑等,但並不限定於該些,除此以外還能夠使用公知的光鹼產生劑的結構。The photobase generator according to the present invention may, for example, be a photobase generator having a cinnamate cinnamate structure as disclosed in Japanese Laid-Open Patent Publication No. 2009-80452 and International Publication No. 2009/123122. A photobase generator having a urethane structure as disclosed in JP-A-2008-247747, and JP-A-2007-249013, and JP-A-2008-003581 Although a photobase generator having an anthracene structure or an aminoformamidine structure is disclosed as described above, the present invention is not limited thereto, and a known photobase generator can be used.

另外,作為光鹼產生劑,作為例可列舉日本特開2012-93746號公報的0185~0188、0199~0200及0202段中所記載之化合物、日本特開2013-194205號公報的0022~0069段中所記載之化合物、日本特開2013-204019號公報的0026~0074段中所記載之化合物、以及國際公開WO2010/064631號公報的0052段中所記載之化合物。In addition, examples of the photobase generator include the compounds described in paragraphs 0185 to 0188, 0199 to 0200, and 0202 of JP-A-2012-93746, and paragraphs 0022 to 0069 of JP-A-2013-194205. The compound described in paragraphs 0026 to 0074 of JP-A-2013-204019, and the compound described in paragraph 0052 of WO2010/064631.

作為光鹼產生劑的市售品,還能夠使用WPBG-266、WPBG-300、WPGB-345、WPGB-140、WPBG-165、WPBG-027、PBG-018、WPGB-015、WPBG-041、WPGB-172、WPGB-174、WPBG-166、WPGB-158、WPGB-025、WPGB-168、WPGB-167及WPBG-082(Wako Pure Chemical Industries, Ltd.製)。 又,作為光鹼產生劑,例示下述化合物。 [化學式60] As a commercial product of a photobase generator, WPBG-266, WPBG-300, WPGB-345, WPGB-140, WPBG-165, WPBG-027, PBG-018, WPGB-015, WPBG-041, WPGB can also be used. -172, WPGB-174, WPBG-166, WPGB-158, WPGB-025, WPGB-168, WPGB-167, and WPBG-082 (manufactured by Wako Pure Chemical Industries, Ltd.). Further, as the photobase generator, the following compounds are exemplified. [Chemical Formula 60]

當使用光鹼產生劑時,組成物中的光鹼產生劑的含量相對於組成物的總固體成分係0.1~50質量%為較佳。下限係0.5質量%以上為更佳,1質量%以上為進一步較佳。上限係30質量%以下為更佳,20質量%以下為進一步較佳。 光鹼產生劑能夠使用一種或兩種以上。當使用兩種以上時,合計量係上述範圍為較佳。When a photobase generator is used, the content of the photobase generator in the composition is preferably from 0.1 to 50% by mass based on the total solid content of the composition. The lower limit is preferably 0.5% by mass or more, and more preferably 1% by mass or more. The upper limit is preferably 30% by mass or less, more preferably 20% by mass or less. The photobase generator can be used alone or in combination of two or more. When two or more types are used, the above range is preferable.

<<其他添加劑>> 本發明的組成物在不損害本發明的效果之範圍內,能夠依需要對各種添加物,例如,熱酸產生劑、增感色素、鏈轉移劑、界面活性劑、高級脂肪酸衍生物、無機粒子、硬化劑、硬化催化劑、填充劑、抗氧化劑、紫外線吸收劑、凝聚抑制劑等進行配合。對該些添加劑進行配合時,將其合計配合量設為組成物的固體成分的3質量%以下為較佳。<<Other Additives>> The composition of the present invention can be used for various additives such as a thermal acid generator, a sensitizing dye, a chain transfer agent, a surfactant, and an advanced one, as long as the effects of the present invention are not impaired. The fatty acid derivative, the inorganic particles, the curing agent, the curing catalyst, the filler, the antioxidant, the ultraviolet absorber, the aggregation inhibitor, and the like are blended. When these additives are blended, the total blending amount is preferably 3% by mass or less of the solid content of the composition.

<<<熱酸產生劑>>> 本發明的組成物可以含有熱酸產生劑。熱酸產生劑藉由加熱而產生酸,且促進聚醯亞胺前驅物的環化而進一步提高硬化膜的機械特性。關於熱酸產生劑,可列舉日本特開2013-167742號公報的0059段中所記載之化合物等。<<<Thermal acid generator>>> The composition of the present invention may contain a thermal acid generator. The thermal acid generator generates an acid by heating and promotes cyclization of the polyimide precursor to further improve the mechanical properties of the cured film. Examples of the thermal acid generator include the compounds described in paragraph 0059 of JP-A-2013-167742.

熱酸產生劑的含量相對於聚醯亞胺前驅物100質量份係0.01質量份以上為較佳,0.1質量份以上為更佳。含有0.01質量份以上的熱酸產生劑,藉此促進交聯反應及聚醯亞胺前驅物的環化,因此能夠進一步提高硬化膜的機械特性及耐化學性。又,從硬化膜的電絕緣性的觀點考慮,熱酸產生劑的含量係20質量份以下為較佳,15質量份以下為更佳,10質量份以下為特佳。 熱酸產生劑可以僅使用一種,亦可以使用兩種以上。當使用兩種以上時,總量成為上述範圍為較佳。The content of the thermal acid generator is preferably 0.01 parts by mass or more based on 100 parts by mass of the polyimide precursor, and more preferably 0.1 part by mass or more. When the thermal acid generator is contained in an amount of 0.01 parts by mass or more, the crosslinking reaction and the cyclization of the polyimide precursor are promoted, so that the mechanical properties and chemical resistance of the cured film can be further improved. In addition, the content of the thermal acid generator is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, and particularly preferably 10 parts by mass or less, from the viewpoint of electrical insulating properties of the cured film. The thermal acid generator may be used singly or in combination of two or more. When two or more types are used, it is preferred that the total amount becomes the above range.

<<<增感色素>>> 本發明的組成物可以包含增感色素。增感色素吸收特定的活性放射線而成為電子激發狀態。成為電子激發狀態之增感色素與熱鹼產生劑、熱自由基聚合起始劑、自由基聚合起始劑等接觸,而產生電子轉移、能量轉移、發熱等作用。藉此,熱鹼產生劑、熱自由基聚合起始劑、自由基聚合起始劑發生化學變化而分解,並生成自由基、酸或鹼。關於增感色素的詳細內容,能夠參閱日本特開2016-027357號公報的0161~0163段的記載,並將該內容編入本說明書中。<<<Sensitivity Pigment>>> The composition of the present invention may contain a sensitizing dye. The sensitizing dye absorbs specific active radiation and becomes an electronically excited state. The sensitizing dye which is in an electronically excited state is brought into contact with a hot alkali generating agent, a thermal radical polymerization initiator, a radical polymerization initiator, and the like to cause electron transfer, energy transfer, heat generation and the like. Thereby, the thermal base generator, the thermal radical polymerization initiator, and the radical polymerization initiator are chemically changed to be decomposed, and a radical, an acid or a base is generated. For the details of the sensitizing dye, the descriptions of paragraphs 0161 to 0163 of JP-A-2016-027357 can be referred to, and the contents are incorporated in the present specification.

當本發明的組成物包含增感色素時,增感色素的含量相對於本發明的組成物的總固體成分係0.01~20質量%為較佳,0.1~15質量%為更佳,0.5~10質量%為進一步較佳。增感色素可以單獨使用一種,亦可以同時使用兩種以上。When the composition of the present invention contains a sensitizing dye, the content of the sensitizing dye is preferably from 0.01 to 20% by mass, more preferably from 0.1 to 15% by mass, more preferably from 0.5 to 10% by mass based on the total solid content of the composition of the present invention. The mass % is further preferred. The sensitizing dye may be used alone or in combination of two or more.

<<<鏈轉移劑>>> 本發明的組成物可以含有鏈轉移劑。鏈轉移劑例如於高分子辭典第三版(高分子學會(The Society of Polymer Science, Japan)編,2005年)683-684頁中被定義。作為鏈轉移劑,例如使用於分子內具有SH、PH、SiH、GeH之化合物組。該些向低活性自由基供給氫而生成自由基,或者經氧化之後,藉由去質子而可生成自由基。尤其,能夠較佳地使用硫醇化合物(例如,2-巰基苯并咪唑類、2-巰基苯并噻唑類、2-巰基苯并噁唑類、3-巰基三唑類、5-巰基四唑類等)。<<<Chain Transfer Agent>> The composition of the present invention may contain a chain transfer agent. The chain transfer agent is defined, for example, in the third edition of the Polymer Dictionary (The Society of Polymer Science, Japan, 2005) 683-684. As the chain transfer agent, for example, a compound group having SH, PH, SiH, or GeH in the molecule is used. These may be generated by supplying hydrogen to a low-activity radical to generate a radical, or by oxidizing, by generating a radical by deprotonation. In particular, a thiol compound can be preferably used (for example, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, 3-mercaptotriazole, 5-mercaptotetrazole, 5-mercaptotetrazole Class, etc.).

當本發明的組成物具有鏈轉移劑時,鏈轉移劑的含量相對於本發明的組成物的總固體成分100質量份,較佳為0.01~20質量份,更佳為1~10質量份,特佳為1~5質量份。鏈轉移劑可以僅為一種,亦可以係兩種以上。當鏈轉移劑為兩種以上時,其合計範圍係上述範圍為較佳。When the composition of the present invention has a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 1 to 10 parts by mass, per 100 parts by mass of the total solid content of the composition of the present invention. It is particularly preferably 1 to 5 parts by mass. The chain transfer agent may be used alone or in combination of two or more. When the chain transfer agent is two or more, the total range is preferably in the above range.

<<<界面活性劑>>> 從進一步提高塗佈性的觀點考慮,本發明的組成物中可以添加各種界面活性劑。作為界面活性劑,能夠使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽系界面活性劑等各種界面活性劑。又,下述界面活性劑亦較佳。 [化學式61] <<<Interacting Agent>>> From the viewpoint of further improving the coatability, various surfactants can be added to the composition of the present invention. As the surfactant, various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a lanthanoid surfactant can be used. Further, the following surfactants are also preferred. [Chemical Formula 61]

當本發明的組成物具有界面活性劑時,界面活性劑的含量相對於本發明的組成物的總固體成分係0.001~2.0質量%為較佳,更佳為0.005~1.0質量%。界面活性劑可以僅為一種,亦可以係兩種以上。當界面活性劑為兩種以上時,其合計範圍係上述範圍為較佳。When the composition of the present invention has a surfactant, the content of the surfactant is preferably 0.001 to 2.0% by mass, more preferably 0.005 to 1.0% by mass based on the total solid content of the composition of the present invention. The surfactant may be used alone or in combination of two or more. When the amount of the surfactant is two or more, the total range is preferably in the above range.

<<<高級脂肪酸衍生物>>> 為了防止因氧引起之聚合抑制,本發明的組成物中可以添加如二十二酸或二十二酸醯胺那樣的高級脂肪酸衍生物而於塗佈後的乾燥過程中偏在於組成物的表面。 當本發明的組成物具有高級脂肪酸衍生物時,高級脂肪酸衍生物的含量相對於本發明的組成物的總固體成分係0.1~10質量%為較佳。高級脂肪酸衍生物可以僅為一種,亦可以係兩種以上。當高級脂肪酸衍生物為兩種以上時,其合計範圍係上述範圍為較佳。<<<High-Fatty Fatty Acid Derivative>> In order to prevent polymerization inhibition by oxygen, a higher fatty acid derivative such as behenic acid or behenyl glutamine may be added to the composition of the present invention after coating. The drying process is biased by the surface of the composition. When the composition of the present invention has a higher fatty acid derivative, the content of the higher fatty acid derivative is preferably from 0.1 to 10% by mass based on the total solid content of the composition of the present invention. The higher fatty acid derivatives may be used alone or in combination of two or more. When the higher fatty acid derivatives are two or more, the total range is preferably in the above range.

<<關於其他含有物質的限制>> 從塗佈面狀的觀點考慮,本發明的組成物的水分含量小於5質量%為較佳,小於1質量%為更佳,小於0.6質量%為特佳。<<Restriction of Other Containing Substances>> From the viewpoint of coating the surface, the composition of the present invention preferably has a moisture content of less than 5% by mass, more preferably less than 1% by mass, and more preferably less than 0.6% by mass. .

從絕緣性的觀點考慮,本發明的組成物的金屬含量小於5質量ppm(parts per million(百萬分率))為較佳,小於1質量ppm為更佳,小於0.5質量ppm為特佳。作為金屬,可列舉鈉、鉀、鎂、鈣、鐵、鉻、鎳等。當包含複數種金屬時,該些金屬的合計為上述範圍為較佳。 又,作為減少無意中包含於本發明的組成物之金屬雜質之方法,能夠列舉作為構成本發明的組成物之原料而選擇金屬含量較少的原料,對構成本發明的組成物之原料進行過濾器過濾,用聚四氟乙烯對裝置內進行內襯而於盡可能抑制了污染之條件下進行蒸餾等方法。From the viewpoint of the insulating property, the metal content of the composition of the present invention is preferably less than 5 ppm by mass (parts per million), more preferably less than 1 ppm by mass, and particularly preferably less than 0.5 ppm by mass. Examples of the metal include sodium, potassium, magnesium, calcium, iron, chromium, nickel, and the like. When a plurality of metals are contained, the total of the metals is preferably in the above range. In addition, as a method of reducing the metal impurities which are inadvertently contained in the composition of the present invention, a raw material having a small metal content is selected as a raw material constituting the composition of the present invention, and the raw materials constituting the composition of the present invention are filtered. The apparatus was filtered, and the inside of the apparatus was lined with polytetrafluoroethylene to carry out distillation under conditions where contamination was suppressed as much as possible.

從配線腐蝕性的觀點考慮,本發明的組成物中,鹵素原子的含量小於500質量ppm為較佳,小於300質量ppm為更佳,小於200質量ppm為特佳。其中,以鹵素離子的狀態存在者係小於5質量ppm為較佳,小於1質量ppm為更佳,小於0.5質量ppm為進一步較佳。作為鹵素原子,可列舉氯原子及溴原子。氯原子及溴原子或氯離子及溴離子的合計分別為上述範圍為較佳。The composition of the present invention preferably has a halogen atom content of less than 500 ppm by mass, more preferably less than 300 ppm by mass, more preferably less than 200 ppm by mass, from the viewpoint of wiring corrosion. Among them, it is preferably less than 5 ppm by mass in the state of a halogen ion, more preferably less than 1 ppm by mass, even more preferably less than 0.5 ppm by mass. Examples of the halogen atom include a chlorine atom and a bromine atom. The total of the chlorine atom and the bromine atom or the chloride ion and the bromide ion is preferably in the above range.

作為本發明的組成物的收納容器能夠使用以往公知的收納容器。又,作為收納容器,以抑制雜質混入原材料或組成物中為目的,使用由6種6層樹脂構成容器內壁之多層瓶、將6種樹脂形成為7層結構之瓶亦為較佳。作為該種容器,例如可列舉日本特開2015-123351號公報中所記載之容器。A conventionally known storage container can be used as the storage container of the composition of the present invention. In addition, as a storage container, it is preferable to use a multi-layer bottle in which the inner wall of the container is composed of six kinds of six layers of resin, and a bottle having six layers of resin in a seven-layer structure for the purpose of suppressing the incorporation of impurities into the material or the composition. As such a container, for example, a container described in JP-A-2015-123351 can be cited.

<<組成物的製備>> 本發明的組成物能夠藉由混合上述各成分而製備。混合方法並無特別限定,能夠藉由以往公知的方法來進行。 又,以去除組成物中的垃圾或微粒等異物為目的,進行使用過濾器之過濾為較佳。過濾器孔徑係1μm以下為較佳,0.5μm以下為更佳,0.1μm以下為進一步較佳。過濾器的材質係聚四氟乙烯、聚乙烯或尼龍為較佳。過濾器可以使用用有機溶劑預先清洗者。過濾器的過濾製程中,可以並聯或串聯複數種過濾器而使用。當使用複數種過濾器時,可以組合使用孔徑和/或材質不同之過濾器。又,可以將各種材料過濾多次。當過濾多次時,可以係循環過濾。又,可以於加壓之後進行過濾。當於加壓之後進行過濾時,進行加壓之壓力係0.05MPa以上且0.3MPa以下為較佳。 除了使用過濾器之過濾以外,還可以進行使用了吸附材料之雜質去除處理。還可以組合過濾器過濾和使用了吸附材料之雜質去除處理。作為吸附材料,能夠使用公知的吸附材料。例如,可列舉矽膠、沸石等無機系吸附材料、活性碳等有機系吸附材料。<<Preparation of Composition>> The composition of the present invention can be prepared by mixing the above components. The mixing method is not particularly limited, and can be carried out by a conventionally known method. Moreover, it is preferable to perform filtration using a filter for the purpose of removing foreign matter such as garbage or fine particles in the composition. The filter pore size is preferably 1 μm or less, more preferably 0.5 μm or less, and further preferably 0.1 μm or less. The material of the filter is preferably polytetrafluoroethylene, polyethylene or nylon. The filter can be pre-cleaned with an organic solvent. In the filtration process of the filter, a plurality of filters can be used in parallel or in series. When a plurality of filters are used, a filter having a different aperture and/or material can be used in combination. Also, various materials can be filtered multiple times. When filtering multiple times, it is possible to filter by circulation. Also, filtration can be carried out after pressurization. When the filtration is carried out after the pressurization, the pressure for pressurization is preferably 0.05 MPa or more and 0.3 MPa or less. In addition to the filtration using a filter, an impurity removal treatment using an adsorbent material can also be performed. It is also possible to combine filter filtration and impurity removal treatment using an adsorbent material. As the adsorbent, a known adsorbent can be used. For example, an inorganic adsorbent such as tannin or zeolite, or an organic adsorbent such as activated carbon can be cited.

<硬化膜、半導體裝置、硬化膜的製造方法、積層體的製造方法及半導體裝置的製造方法> 接著,對本發明的硬化膜、半導體裝置、硬化膜的製造方法、積層體的製造方法及半導體裝置的製造方法進行說明。 本發明的硬化膜藉由對本發明的組成物進行硬化而成。本發明的硬化膜的膜厚例如能夠設為0.5μm以上,且能夠設為1μm以上。又,作為上限值,能夠設為100μm以下,且還能夠設為30μm以下。<Curing film, semiconductor device, method for producing cured film, method for producing laminated body, and method for producing semiconductor device> Next, the cured film, semiconductor device, method for producing cured film, method for producing laminated body, and semiconductor device of the present invention The manufacturing method will be described. The cured film of the present invention is obtained by hardening the composition of the present invention. The film thickness of the cured film of the present invention can be, for example, 0.5 μm or more, and can be 1 μm or more. In addition, the upper limit can be 100 μm or less, and can be 30 μm or less.

可以將本發明的硬化膜積層兩層以上來作為積層體。具有兩層以上的本發明的硬化膜之種積層體係於硬化膜之間具有金屬層之態樣為較佳。該種金屬層可較佳地用作再配線層等金屬配線。The cured film of the present invention may be laminated in two or more layers as a laminate. A seed layer system having two or more layers of the cured film of the present invention preferably has a metal layer between the cured films. Such a metal layer can be preferably used as a metal wiring such as a rewiring layer.

作為能夠應用本發明的硬化膜的領域,可列舉半導體裝置的絕緣膜、再配線層用層間絕緣膜等。尤其,由於解析度為良好,因此還能夠較佳地使用於三維安裝裝置中的再配線層用層間絕緣膜等。 又,本發明中的硬化膜還能夠使用於電子用光阻劑、電鍍(電解)抗蝕劑(galvanic resist)、蝕刻抗蝕刻、頂焊抗蝕劑(solder top resist)等。 又,本發明中的硬化膜還能夠使用於膠印版面或網版版面等版面的製造、對成型部件的使用、電子、尤其微電子中的保護漆及介電層的製造等中。The field of the cured film of the present invention is exemplified by an insulating film of a semiconductor device, an interlayer insulating film for a rewiring layer, and the like. In particular, since the resolution is good, it can be preferably used for an interlayer insulating film for a rewiring layer in a three-dimensional mounting device. Further, the cured film of the present invention can also be used for an electron photoresist, a galvanic resist, an etching resist, a solder top resist, or the like. Further, the cured film of the present invention can also be used for the production of a layout such as an offset printing plate or a screen printing surface, use of a molded member, electrons, particularly a protective paint for a microelectronic, and production of a dielectric layer.

本發明的硬化膜的製造方法包含使用本發明的組成物之情況。較佳為可列舉如下硬化膜的製造方法,其具有:感光性樹脂組成物層形成製程,將本發明的感光性樹脂組成物應用於基板而使其成為層狀;曝光製程,對上述感光性樹脂組成物層進行曝光;及顯影處理製程,對上述經曝光之感光性樹脂組成物層(樹脂層)進行顯影處理。本發明的感光性樹脂組成物可較佳地使用於進行負型顯影之情況。The method for producing a cured film of the present invention includes the case of using the composition of the present invention. Preferably, the method for producing a cured film comprising a photosensitive resin composition layer forming process, applying the photosensitive resin composition of the present invention to a substrate to form a layer, and an exposure process for the above-mentioned photosensitivity The resin composition layer is subjected to exposure; and a development treatment process is performed to develop the exposed photosensitive resin composition layer (resin layer). The photosensitive resin composition of the present invention can be preferably used in the case of performing negative development.

本發明的積層體的製造方法包括本發明的硬化膜的製造方法。本發明的積層體的製造方法中,依照本發明的硬化膜的製造方法,於形成硬化膜之後,進而再次依次進行感光性樹脂組成物層形成製程、曝光製程及顯影處理製程為較佳。尤其,進而將感光性樹脂組成物層形成製程、曝光製程及顯影處理製程依次進行2~5次(亦即,合計3~6次)為較佳。藉由如此積層硬化膜,能夠設為積層體。本發明中,尤其於設置硬化膜來顯影之後,於已顯影去除之部分設置金屬層為較佳。 以下對該些的詳細內容進行說明。The method for producing a laminate of the present invention includes the method for producing a cured film of the present invention. In the method for producing a layered product of the present invention, in the method for producing a cured film of the present invention, after the cured film is formed, the photosensitive resin composition layer forming process, the exposure process, and the development process are preferably performed in order. In particular, it is preferable that the photosensitive resin composition layer forming process, the exposure process, and the development process are sequentially performed 2 to 5 times (that is, 3 to 6 times in total). By laminating the cured film in this manner, it is possible to form a laminated body. In the present invention, in particular, after the cured film is provided for development, it is preferred to provide a metal layer in the portion which has been removed by development. The details of this will be described below.

<<感光性樹脂組成物層形成製程>> 本發明的積層體的製造方法包括感光性樹脂組成物層形成製程,將感光性樹脂組成物應用於基板而使其成為層狀。 基板的種類能夠依用途而適當設定,但並無特別限制,可列舉矽、氮化矽、多晶矽、氧化矽、非晶矽等半導體製作基板、石英、玻璃、光學膜、陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等金屬基板、紙、SOG(Spin On Glass)、TFT(薄膜晶體管)陣列基板、等離子顯示面板(PDP)的電極板等。本發明中,尤其半導體製作基板為較佳,矽基板為更佳。 又,當於樹脂層的表面或金屬層的表面形成感光性樹脂組成物層時,樹脂層或金屬層成為基板。 作為將感光性樹脂組成物應用於基板之方法,塗佈為較佳。 具體而言,作為應用之方法,例示浸塗法、氣刀塗佈法、簾式塗佈法、線棒塗佈法、凹版塗佈法、擠出塗佈法、噴塗法、旋轉塗佈法、狹縫塗佈法及噴墨法等。從感光性樹脂組成物層的厚度的均勻性的觀點考慮,更佳為旋轉塗佈法、狹縫塗佈法、噴塗法、噴墨法。依方法調整適當的固體成分濃度或塗佈條件,藉此能夠得到所希望的厚度的樹脂層。又,依基板的形狀亦能夠適當選擇塗佈方法,但若為晶圓等圓形基板,則旋轉塗佈法或噴塗法、噴墨法等為較佳,若為矩形基板,則狹縫塗佈法或噴塗法、噴墨法等為較佳。當為旋轉塗佈法時,例如能夠以500~2000rpm的轉速應用10秒鐘~1分鐘左右。<<Photosensitive Resin Composition Layer Forming Process>> The method for producing a laminate of the present invention includes a process for forming a photosensitive resin composition layer, and applying the photosensitive resin composition to a substrate to form a layer. The type of the substrate can be appropriately set depending on the application, but is not particularly limited, and examples thereof include a semiconductor-made substrate such as tantalum, tantalum nitride, polycrystalline germanium, cerium oxide, or amorphous germanium, quartz, glass, an optical film, a ceramic material, and a vapor deposited film. A magnetic film, a reflective film, a metal substrate such as Ni, Cu, Cr, or Fe, paper, an SOG (Spin On Glass), a TFT (Thin Film Transistor) array substrate, an electrode plate of a plasma display panel (PDP), or the like. In the present invention, in particular, a semiconductor-made substrate is preferable, and a germanium substrate is more preferable. Further, when a photosensitive resin composition layer is formed on the surface of the resin layer or the surface of the metal layer, the resin layer or the metal layer serves as a substrate. As a method of applying a photosensitive resin composition to a substrate, coating is preferred. Specifically, examples of the application method include dip coating method, air knife coating method, curtain coating method, wire bar coating method, gravure coating method, extrusion coating method, spray coating method, and spin coating method. , slit coating method, inkjet method, and the like. From the viewpoint of uniformity of the thickness of the photosensitive resin composition layer, a spin coating method, a slit coating method, a spray coating method, and an inkjet method are more preferable. The resin layer having a desired thickness can be obtained by adjusting an appropriate solid content concentration or coating conditions according to the method. Further, the coating method can be appropriately selected depending on the shape of the substrate. However, in the case of a circular substrate such as a wafer, a spin coating method, a spray coating method, an inkjet method, or the like is preferable, and if it is a rectangular substrate, the slit coating is applied. A cloth method, a spray method, an ink jet method, or the like is preferred. In the case of the spin coating method, for example, it can be applied at a rotation speed of 500 to 2000 rpm for about 10 seconds to 1 minute.

<<乾燥製程>> 本發明的積層體的製造方法還可以包括於形成感光性樹脂組成物層之後,為了去除溶劑而進行乾燥之製程。較佳的乾燥溫度係50~150℃,70℃~130℃為更佳,90℃~110℃為進一步較佳。作為乾燥時間,例示30秒鐘~20分鐘,1分鐘~10分鐘為較佳,3分鐘~7分鐘為更佳。<<Drying Process>> The method for producing a layered body of the present invention may further include a process of drying after removing the solvent after forming the photosensitive resin composition layer. The preferred drying temperature is 50 to 150 ° C, more preferably 70 ° C to 130 ° C, and further preferably 90 ° C to 110 ° C. The drying time is exemplified by 30 seconds to 20 minutes, preferably 1 minute to 10 minutes, and more preferably 3 minutes to 7 minutes.

<<曝光製程>> 本發明的積層體的製造方法包括曝光製程,對上述感光性樹脂組成物層進行曝光。曝光量於能夠使感光性樹脂組成物硬化之範圍內無特別限定,例如,以波長365nm下的曝光能量換算照射100~10000mJ/cm2 為較佳,照射200~8000mJ/cm2 為更佳。 曝光波長能夠於190~1000nm的範圍內適當設定,240~550nm為較佳。<<Exposure Process>> The method for producing a layered body of the present invention includes an exposure process for exposing the photosensitive resin composition layer. The exposure amount is not particularly limited as long as it can cure the photosensitive resin composition. For example, it is preferably 100 to 10000 mJ/cm 2 in terms of exposure energy at a wavelength of 365 nm, and more preferably 200 to 8000 mJ/cm 2 . The exposure wavelength can be appropriately set in the range of 190 to 1000 nm, and 240 to 550 nm is preferable.

<<顯影處理製程>> 本發明的積層體的製造方法包括顯影處理製程,對經曝光之感光性樹脂組成物層進行負型顯影處理。藉由進行負型顯影,去除未曝光之部分(非曝光部)。關於顯影方法,只要能夠形成所希望的圖案,則無特別限定,例如,能夠採用旋覆浸沒、噴霧、浸漬、超聲波等顯影方法。 顯影使用顯影液來進行。關於顯影液,只要可去除未曝光之部分(非曝光部),則能夠使用而無特別限制。顯影液包含有機溶劑為較佳。關於有機溶劑,作為酯類,例如可適宜地列舉乙酸乙酯、乙酸正丁酯、甲酸戊酯、乙酸異戊酯、乙酸異丁酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷氧基乙酸烷基酯(例:烷氧基乙酸甲酯、烷氧基乙酸乙酯、烷氧基乙酸丁酯(例如,甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷氧基丙酸烷基酯類(例:3-烷氧基丙酸甲酯、3-烷氧基丙酸乙酯等(例如,3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷氧基丙酸烷基酯類(例:2-烷氧基丙酸甲酯、2-烷氧基丙酸乙酯、2-烷氧基丙酸丙酯等(例如,2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷氧基-2-甲基丙酸甲酯及2-烷氧基-2-甲基丙酸乙酯(例如,2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯等,以及作為醚類,例如可適宜地列舉二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等,以及作為酮類,例如可適宜地列舉甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮等,以及作為芳香族烴類,例如可適宜地列舉甲苯、二甲苯、大茴香醚、檸檬烯等,以及作為亞碸類,可適宜地列舉二甲基亞碸。 本發明中,尤其環戊酮、γ-丁內酯為較佳,環戊酮為更佳。<<Developing Process>> The method for producing a layered body of the present invention includes a development process for performing a negative development process on the exposed photosensitive resin composition layer. The unexposed portion (non-exposed portion) is removed by performing negative development. The development method is not particularly limited as long as a desired pattern can be formed. For example, a development method such as spin coating, spraying, dipping, or ultrasonic can be employed. Development is carried out using a developing solution. The developer can be used without any particular limitation as long as the unexposed portion (non-exposed portion) can be removed. It is preferred that the developer contains an organic solvent. As the organic solvent, examples of the ester include ethyl acetate, n-butyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, and ethyl butyrate. Ester, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkoxyacetate (eg methyl alkoxyacetate, Ethyl alkoxyacetate, butyl alkoxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate) Et.), 3-alkoxypropionic acid alkyl esters (eg, methyl 3-alkoxypropionate, ethyl 3-alkoxypropionate, etc. (for example, methyl 3-methoxypropionate) , 3-methoxypropionic acid ethyl ester, 3-ethoxypropionic acid methyl ester, 3-ethoxypropionic acid ethyl ester, etc.), 2-alkoxypropionic acid alkyl esters (Example: 2- Methyl alkoxypropionate, ethyl 2-alkoxypropionate, propyl 2-alkoxypropionate, etc. (for example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate , propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate) Methyl 2-alkoxy-2-methylpropanoate and ethyl 2-alkoxy-2-methylpropanoate (for example, methyl 2-methoxy-2-methylpropionate, 2- Ethyl ethoxy-2-methylpropionate), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, methyl 2-oxobutanoate, Ethyl 2-oxobutanoate or the like, and as the ether, for example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetic acid can be suitably used. Ester, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether Acetate, propylene glycol monopropyl ether acetate, and the like, and as the ketone, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl are suitably exemplified. Examples of the aromatic hydrocarbons include, for example, toluene, xylene, anisole, limonene, and the like, and examples of the anthracene include dimethyl hydrazine. In the present invention, especially cyclopentanone or γ-butyrolactone is preferred, and cyclopentanone is more preferred.

作為顯影時間,10秒鐘~5分鐘為較佳。顯影時的溫度無特別限定,通常能夠於20~40℃下進行。 使用顯影液進行處理之後,進而還可以進行沖洗。沖洗用與顯影液不同之溶劑進行為較佳。例如,能夠使用感光性樹脂組成物中所含有之溶劑來進行沖洗。沖洗時間係5秒鐘~1分鐘為較佳。As the development time, 10 seconds to 5 minutes is preferable. The temperature at the time of development is not particularly limited, and it can usually be carried out at 20 to 40 °C. After the treatment with the developer, it is also possible to carry out the rinsing. It is preferred to carry out the rinsing with a solvent different from the developer. For example, rinsing can be performed using a solvent contained in the photosensitive resin composition. The rinsing time is preferably from 5 seconds to 1 minute.

<<加熱製程>> 本發明的積層體的製造方法包括加熱製程為較佳。加熱製程中,進行聚醯亞胺前驅物的環化反應。又,當本發明的組成物包含自由基聚合性化合物時,還進行未反應的自由基聚合性化合物的硬化等。作為加熱溫度(最高加熱溫度),50~450℃為較佳,140~400℃為更佳,160~350℃為進一步較佳。 關於加熱,從加熱開始時的溫度至最高加熱溫度以1~12℃/分鐘的升溫速度進行為較佳,2~10℃/分鐘為更佳,3~10℃/分鐘為進一步較佳。藉由將升溫速度設為2℃/分鐘以上,能夠確保生產率的同時防止胺的過度揮發,藉由將升溫速度設為12℃/分鐘以下,能夠緩和硬化膜的殘存應力。 加熱開始時的溫度係20℃~150℃為較佳,20℃~130℃為更佳,25℃~120℃為進一步較佳。加熱開始時的溫度是指,開始加熱至最高加熱溫度之製程時的溫度。例如,將感光性樹脂組成物應用於基板上之後,使其乾燥時,為該乾燥後的溫度,例如,從感光性樹脂組成物中所含有的溶劑的沸點-(30~200℃)逐漸升溫為較佳。 加熱時間(最高加熱溫度下的加熱時間)係10~360分鐘為較佳,20~300分鐘為進一步較佳,30~240分鐘為特佳。 尤其形成多層積層體時,從硬化膜的層間的黏附性的觀點考慮,於180℃~320℃的加熱溫度下進行加熱為較佳,於180℃~260℃下進行加熱為更佳。其理由雖不確定,但認為其原因為藉由設為該溫度,層間的聚醯亞胺前驅物的乙炔基彼此進行交聯反應。<<Heating Process>> The manufacturing method of the laminated body of the present invention includes a heating process preferably. In the heating process, a cyclization reaction of the polyimide precursor is carried out. In addition, when the composition of the present invention contains a radically polymerizable compound, curing of the unreacted radical polymerizable compound or the like is also performed. The heating temperature (the highest heating temperature) is preferably 50 to 450 ° C, more preferably 140 to 400 ° C, and still more preferably 160 to 350 ° C. The heating is preferably carried out at a temperature elevation rate of from 1 to 12 ° C /min from the temperature at the start of heating to the maximum heating temperature, more preferably 2 to 10 ° C / min, and still more preferably 3 to 10 ° C / min. By setting the temperature increase rate to 2° C./min or more, the productivity can be ensured while preventing excessive evaporation of the amine, and by setting the temperature increase rate to 12° C./min or less, the residual stress of the cured film can be alleviated. The temperature at the start of heating is preferably 20 ° C to 150 ° C, more preferably 20 ° C to 130 ° C, and further preferably 25 ° C to 120 ° C. The temperature at the start of heating refers to the temperature at which the process of heating to the highest heating temperature is started. For example, when the photosensitive resin composition is applied to a substrate and then dried, the temperature after drying is gradually increased from the boiling point of the solvent contained in the photosensitive resin composition (30 to 200 ° C). It is better. The heating time (heating time at the highest heating temperature) is preferably from 10 to 360 minutes, further preferably from 20 to 300 minutes, and particularly preferably from 30 to 240 minutes. In particular, when a multilayered laminate is formed, heating is preferably carried out at a heating temperature of from 180 ° C to 320 ° C from the viewpoint of adhesion between the layers of the cured film, and heating at 180 ° C to 260 ° C is more preferable. Although the reason is not certain, it is considered that the reason is that the ethynyl group of the polyimide precursor of the interlayer is cross-linked with each other by the temperature.

加熱可以分階段進行。作為例,可以進行如下前處理製程,亦即直至25℃~180℃以3℃/分鐘進行升溫,於180℃下放置60分鐘,且直至180~200℃以2℃/分鐘進行升溫,於200℃下放置120分鐘。作為前處理製程之加熱溫度係100~200℃為較佳,110~190℃為更佳,120~185℃為進一步較佳。該前處理製程中,如美國專利9159547號公報中所記載那樣照射紫外線的同時進行處理亦為較佳。藉由該種前處理製程能夠提高膜的特性。前處理製程於10秒鐘~2小時左右的短時間內進行即可,15秒鐘~30分鐘為更佳。前處理可以是兩階段以上的步驟,例如可以於100~150℃的範圍下進行前處理製程1,然後於150~200℃的範圍下進行前處理製程2。 進而,可以於加熱之後進行冷卻,作為該情況下的冷卻速度,1~5℃/分鐘為較佳。Heating can be carried out in stages. As an example, the pretreatment process may be carried out, that is, the temperature is raised at 3 ° C / min up to 25 ° C to 180 ° C, and left at 180 ° C for 60 minutes, and then raised at 180 ° C to 200 ° C at 2 ° C / min. Leave at °C for 120 minutes. The heating temperature of the pretreatment process is preferably 100 to 200 ° C, more preferably 110 to 190 ° C, and still more preferably 120 to 185 ° C. In the pretreatment process, it is also preferred to carry out the treatment while irradiating ultraviolet rays as described in U.S. Patent No. 9159547. The characteristics of the film can be improved by this pretreatment process. The pretreatment process can be carried out in a short time of about 10 seconds to 2 hours, and more preferably 15 seconds to 30 minutes. The pretreatment may be a two-stage or more step, for example, the pretreatment process 1 may be carried out in the range of 100 to 150 ° C, and then the pretreatment process 2 may be carried out in the range of 150 to 200 ° C. Further, it is possible to perform cooling after heating, and as the cooling rate in this case, it is preferably 1 to 5 ° C / min.

關於加熱製程,從防止聚醯亞胺前驅物等的分解的方面考慮,藉由使氮、氦、氬等惰性氣體流過等,於低氧濃度的環境下進行為較佳。氧濃度係50ppm(體積比)以下為較佳,20ppm(體積比)以下為更佳。The heating process is preferably carried out in a low oxygen concentration environment by preventing the decomposition of the polyimide precursor or the like by flowing an inert gas such as nitrogen, helium or argon. The oxygen concentration is preferably 50 ppm (volume ratio) or less, and more preferably 20 ppm (volume ratio) or less.

<<金屬層形成製程>> 本發明的積層體的製造方法包括於顯影處理後的感光性樹脂組成物層的表面形成金屬層之金屬層形成製程為較佳,。 作為金屬層,無特別限定,能夠使用現有的金屬種類,例示銅、鋁、鎳、釩、鈦、鉻、鈷、金及鎢,銅及鋁為更佳,銅為進一步較佳。 金屬層的形成方法無特別限定,能夠應用現有的方法。例如,能夠使用日本特開2007-157879號公報、日本特表2001-521288號公報、日本特開2004-214501號公報、日本特開2004-101850號公報中所記載之方法。例如,可考慮光微影、剝離、電解電鍍、無電解電鍍、蝕刻、印刷及組合該些而成之方法等。更具體而言,可列舉組合濺射、光微影及蝕刻而成之圖案化方法、組合光微影與電解電鍍而成之圖案化方法。 作為金屬層的厚度,於最厚的壁厚部係0.1~50μm為較佳,1~10μm為更佳。<<Metal Layer Forming Process>> The method for producing a layered body of the present invention preferably includes a metal layer forming process for forming a metal layer on the surface of the photosensitive resin composition layer after the development process. The metal layer is not particularly limited, and conventional metal species can be used, and examples thereof include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, and tungsten, and copper and aluminum are more preferable, and copper is more preferable. The method of forming the metal layer is not particularly limited, and a conventional method can be applied. For example, the method described in JP-A-2007-157879, JP-A-2001-521288, JP-A-2004-214501, and JP-A-2004-101850 can be used. For example, photolithography, peeling, electrolytic plating, electroless plating, etching, printing, and a combination of these may be considered. More specifically, a patterning method in which sputtering, photolithography, and etching are combined, and a patterning method in which photolithography and electrolytic plating are combined are exemplified. The thickness of the metal layer is preferably 0.1 to 50 μm in the thickest thickness portion, and more preferably 1 to 10 μm.

<<積層製程>> 本發明的製造方法還包括積層製程為較佳。 積層製程係包括再次依次進行上述感光性樹脂組成物層形成製程、上述曝光製程及上述顯影處理製程之情況之一系列的製程。當然,積層製程還可以包括上述乾燥製程或加熱製程等。 當於積層製程之後還進行積層製程時,可以於上述曝光製程之後或上述金屬層形成製程之後,進而進行表面活化處理製程。作為表面活化處理,例示電漿處理。 上述積層製程進行2~5次為較佳,進行3~5次為更佳。 例如,如樹脂層/金屬層/樹脂層/金屬層/樹脂層/金屬層那樣的樹脂層為3層以上且7層以下的結構為較佳,3層以上且5層以下為進一步較佳。 亦即,本發明中,尤其於設置金屬層之後,進而依次進行上述感光性樹脂組成物層形成製程、上述曝光製程及上述顯影處理製程,以使覆蓋上述金屬層為較佳。藉由交替進行積層感光性樹脂組成物層(樹脂)之積層製程與金屬層形成製程,能夠交替積層感光性樹脂組成物層(樹脂層)與金屬層。<<Laminating Process>> The manufacturing method of the present invention further includes a lamination process which is preferable. The lamination process includes a series of processes in which the photosensitive resin composition layer forming process, the exposure process, and the development process described above are sequentially performed. Of course, the lamination process may also include the above drying process or heating process. When the build-up process is further performed after the build-up process, the surface activation process may be performed after the above exposure process or after the above-described metal layer formation process. As the surface activation treatment, a plasma treatment is exemplified. It is preferable to carry out the above-mentioned lamination process 2 to 5 times, and it is more preferable to carry out 3 to 5 times. For example, a resin layer such as a resin layer/metal layer/resin layer/metal layer/resin layer/metal layer is preferably three or more layers and seven or less layers, and more preferably three or more layers and five or less layers. That is, in the present invention, in particular, after the metal layer is provided, the photosensitive resin composition layer forming process, the exposure process, and the development process are sequentially performed so as to cover the metal layer. By alternately performing the lamination process of the laminated photosensitive resin composition layer (resin) and the metal layer forming process, the photosensitive resin composition layer (resin layer) and the metal layer can be alternately laminated.

本發明中還揭示包括本發明的硬化膜或積層體之半導體裝置。對將本發明的組成物使用於再配線層用層間絕緣膜的形成中之半導體裝置的一實施形態進行說明。A semiconductor device including the cured film or laminate of the present invention is also disclosed in the present invention. An embodiment of a semiconductor device in which the composition of the present invention is used in the formation of an interlayer insulating film for a rewiring layer will be described.

圖1所示之半導體元件100係所謂的三維安裝裝置,且積層有複數個半導體元件(半導體晶片)101a~101d之積層體101配置於配線基板120上。此外,該實施形態中,主要對半導體元件(半導體晶片)的積層數為4層之情況進行說明,但半導體元件(半導體晶片)的積層數並無特別限定,例如可以係2層、8層、16層、32層等。又,可以係1層。The semiconductor device 100 shown in FIG. 1 is a so-called three-dimensional mounting device, and a laminated body 101 in which a plurality of semiconductor elements (semiconductor wafers) 101a to 101d are laminated is disposed on the wiring substrate 120. In the embodiment, the number of layers of the semiconductor element (semiconductor wafer) is mainly four, but the number of layers of the semiconductor element (semiconductor wafer) is not particularly limited, and for example, it may be two or eight layers. 16 layers, 32 layers, etc. Also, it can be one layer.

複數個半導體元件101a~101d均包括矽基板等半導體晶圓。最上段的半導體元件101a不具有貫通電極,且於其一方的面形成有電極焊盤(未圖示)。半導體元件101b~101d具有貫通電極102b~102d,且於各半導體元件的兩面設置有一體設置於貫通電極之連接焊盤(未圖示)。Each of the plurality of semiconductor elements 101a to 101d includes a semiconductor wafer such as a germanium substrate. The uppermost semiconductor element 101a does not have a through electrode, and an electrode pad (not shown) is formed on one surface thereof. The semiconductor elements 101b to 101d have through electrodes 102b to 102d, and connection pads (not shown) integrally provided on the through electrodes are provided on both surfaces of the semiconductor elements.

積層體101具有將不具有貫通電極之半導體元件101a和具有貫通電極102b~102d之半導體元件101b~101d倒裝晶片接合之結構。亦即,不具有貫通電極之半導體元件101a的電極焊盤和具有與其相鄰之貫通電極102b之半導體元件101b的半導體元件101a側的連結焊盤藉由焊料凸塊等金屬凸塊103a而連接,且具有貫通電極102b之半導體元件101b的另一側的連接焊盤和具有與其相鄰之貫通電極102c之半導體元件101c的半導體元件101b側的連接焊盤藉由焊料凸塊等金屬凸塊103b而連接。同樣地,具有貫通電極102c之半導體元件101c的另一側的連接焊盤和具有與其相鄰之貫通電極102d之半導體元件101d的半導體元件101c側的連接焊盤藉由焊料凸塊等金屬凸塊103c而連接。The laminated body 101 has a structure in which the semiconductor element 101a having no through electrodes and the semiconductor elements 101b to 101d having the through electrodes 102b to 102d are flip-chip bonded. That is, the electrode pads of the semiconductor element 101a having no through electrodes and the connection pads on the side of the semiconductor element 101a of the semiconductor element 101b having the through electrodes 102b adjacent thereto are connected by metal bumps 103a such as solder bumps. The connection pad on the other side of the semiconductor element 101b having the through electrode 102b and the connection pad on the side of the semiconductor element 101b having the semiconductor element 101c adjacent to the through electrode 102c are formed by the metal bumps 103b such as solder bumps. connection. Similarly, the connection pad on the other side of the semiconductor element 101c having the through electrode 102c and the connection pad on the side of the semiconductor element 101c having the semiconductor element 101d of the through electrode 102d adjacent thereto are formed by metal bumps such as solder bumps. 103c and connected.

於各半導體元件101a~101d的間隙中形成有底部填充層110,各半導體元件101a~101d經由底部填充層110而積層。The underfill layer 110 is formed in the gap between the semiconductor elements 101a to 101d, and the semiconductor elements 101a to 101d are laminated via the underfill layer 110.

積層體101配置於配線基板120上。作為配線基板120,例如使用將樹脂基板、陶瓷基板、玻璃基板等絕緣基板用作基材之多層配線基板。作為應用樹脂基板之配線基板120,可列舉多層敷銅積層板(多層印刷配線板)等。The laminated body 101 is disposed on the wiring substrate 120. As the wiring substrate 120, for example, a multilayer wiring board using an insulating substrate such as a resin substrate, a ceramic substrate, or a glass substrate as a substrate is used. As the wiring substrate 120 to which the resin substrate is applied, a multilayer copper-clad laminate (multilayer printed wiring board) or the like can be given.

於配線基板120的一側的面中設置有表面電極120a。 於配線基板120與積層體101之間配置有形成有再配線層105之絕緣膜115,配線基板120與積層體101經由再配線層105而電連接。絕緣膜115為使用本發明的組成物而形成者。 亦即,再配線層105的一端經由焊料凸塊等金屬凸塊103d與形成於半導體元件101d的再配線層105側的面之電極焊盤連接。又,再配線層105的另一端經由焊料凸塊等金屬凸塊103e與配線基板的表面電極120a連接。 進而,於絕緣膜115與積層體101之間形成有底部填充層110a。又,於絕緣膜115與配線基板120之間形成有底部填充層110b。 [實施例]A surface electrode 120a is provided on a surface of one side of the wiring substrate 120. An insulating film 115 on which the rewiring layer 105 is formed is disposed between the wiring substrate 120 and the laminated body 101, and the wiring substrate 120 and the laminated body 101 are electrically connected via the rewiring layer 105. The insulating film 115 is formed by using the composition of the present invention. In other words, one end of the rewiring layer 105 is connected to the electrode pad formed on the surface of the rewiring layer 105 side of the semiconductor element 101d via the metal bump 103d such as a solder bump. Further, the other end of the rewiring layer 105 is connected to the surface electrode 120a of the wiring board via a metal bump 103e such as a solder bump. Further, an underfill layer 110a is formed between the insulating film 115 and the laminated body 101. Further, an underfill layer 110b is formed between the insulating film 115 and the wiring substrate 120. [Examples]

以下,列舉實施例對本發明進行進一步詳細的說明。以下的實施例中所示出之材料、使用量、比例、處理內容、處理步驟等於不脫離本發明的宗旨的範圍內,能夠適當進行變更。從而,本發明的範圍並不限定於以下所示之具體例。“份”、“%”只要無特別限制,則係質量基準。Hereinafter, the present invention will be described in further detail by way of examples. The materials, the amounts, the ratios, the processing contents, and the processing steps shown in the following examples are equivalent to the scope of the invention, and can be appropriately changed. Therefore, the scope of the present invention is not limited to the specific examples shown below. “Parts” and “%” are quality standards unless otherwise specified.

(合成例1) [源自4,4’-氧二鄰苯二甲酸二酐、4,4’-氧二苯胺(4,4’-二胺基二苯醚)、N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺(化合物(1)-1)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-1:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)4,4’-氧二鄰苯二甲酸二酐(於140℃下乾燥了12小時)、18.6g(129毫莫耳)甲基丙烯酸2-羥乙酯、0.05g對苯二酚、10.7g吡啶及140g二甘醇二甲醚(二乙二醇二甲醚)進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸與甲基丙烯酸2-羥乙酯的二酯。接著,將反應混合物冷卻至-10℃,將溫度保持-10±4℃的同時經10分鐘加入了16.12g(135.5毫莫耳)SOCl2 。用50ml的N-甲基吡咯烷酮稀釋之後,於室溫下將反應混合物攪拌了2小時。接著,將9.403g(46.96毫莫耳)4,4’-氧二苯胺及2.950g(11.74毫莫耳)N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺溶解於100ml的N-甲基吡咯烷酮而成之溶液於20~23℃下經20分鐘滴加到反應混合物中。接著,將反應混合物於室溫下攪拌了1晩。接著,於5升的水中使聚醯亞胺前驅物沉澱,以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。對聚醯亞胺前驅物進行過濾而去除,於4升的水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下將所得到之聚醯亞胺前驅物於45℃下乾燥3天而得到了聚醯亞胺前驅物(A-1)。 對該聚醯亞胺前驅物(A-1)進行GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係25,000。下述重複單元的莫耳比率(左側的重複單元:右側的重複單元)係80:20。 [化學式62] (Synthesis Example 1) [From 4,4'-oxydiphthalic dianhydride, 4,4'-oxydiphenylamine (4,4'-diaminodiphenyl ether), N-(3'- Polyacetylene precursor of ethynylphenyl)-3,5-diaminobenzamide (compound (1)-1) and 2-hydroxyethyl methacrylate (A-1: radical polymerization) Synthesis of a poly-imine precursor of a base] 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic dianhydride (dried at 140 ° C for 12 hours), 18.6 g (129 Mixing 2-hydroxyethyl methacrylate, 0.05 g hydroquinone, 10.7 g pyridine and 140 g diglyme (diethylene glycol dimethyl ether), stirring at 60 ° C A diester of 4,4'-oxydiphthalic acid and 2-hydroxyethyl methacrylate was produced over 18 hours. Next, the reaction mixture was cooled to -10 ° C, and while maintaining the temperature at -10 ± 4 ° C, 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes. After diluting with 50 ml of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, 9.403 g (46.96 mmol) of 4,4'-oxydiphenylamine and 2.950 g (11.74 mmol) of N-(3'-ethynylphenyl)-3,5-diaminobenzimidamide A solution of the amine dissolved in 100 ml of N-methylpyrrolidone was added dropwise to the reaction mixture at 20 to 23 ° C for 20 minutes. Next, the reaction mixture was stirred at room temperature for 1 Torr. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimine precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimine precursor was filtered and removed, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure to obtain a polyimine precursor (A-1). As a result of GPC measurement of the polyimine precursor (A-1), the weight average molecular weight (Mw) was 25,000 as a value in terms of polystyrene. The molar ratio of the repeating unit described below (repeating unit on the left side: repeating unit on the right side) is 80:20. [Chemical Formula 62]

此外,重量平均分子量(Mw)係依照凝膠滲透色譜(GPC測定)之聚苯乙烯換算值。使用HLC-8220(TOSOH CORPORATION製),作為管柱使用保護管柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000、TSKgel Super HZ2000(TOSOH CORPORATION製),洗脫液使用THF(四氫呋喃)而進行了測定。又,檢測使用了UV線(紫外線)波長254nm的檢測器。Further, the weight average molecular weight (Mw) is a polystyrene equivalent value in terms of gel permeation chromatography (GPC measurement). HLC-8220 (manufactured by TOSOH CORPORATION) was used as a column using a protective column HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION), and the eluent was THF (manufactured by TOSOH CORPORATION). Tetrahydrofuran) was measured. Further, a detector using a UV line (ultraviolet) wavelength of 254 nm was used.

(合成例2) [源自均苯四甲酸二酐、4,4’-氧二苯胺、N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺(化合物(1)-1)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-2:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將14.06g(64.5毫莫耳)均苯四甲酸二酐(於140℃下乾燥了12小時)、18.6g(129毫莫耳)甲基丙烯酸2-羥乙酯、0.05g對苯二酚、10.7g吡啶及140gNMP(N-甲基-2-吡咯烷酮)進行混合,於60℃的溫度下攪拌18小時而製造了均苯四甲酸與甲基丙烯酸2-羥乙酯的二酯。接著,將反應混合物冷卻至-10℃,將溫度保持-10±4℃的同時經10分鐘加入了16.12g(135.5毫莫耳)SOCl2 。用50ml的N-甲基吡咯烷酮稀釋之後,於室溫下將反應混合物攪拌了2小時。接著,將9.403g(46.96毫莫耳)4,4’-氧二苯胺及2.950g(11.74毫莫耳)N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺溶解於100ml的N-甲基吡咯烷酮而成之溶液於20~23℃下經20分鐘滴加到反應混合物中。接著,將反應混合物於室溫下攪拌了1晩。接著,於5升的水中使聚醯亞胺前驅物沉澱,以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。對聚醯亞胺前驅物進行過濾而去除,於4升的水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下將所得到之聚醯亞胺前驅物於45℃下乾燥3天而得到了聚醯亞胺前驅物(A-2)。 對該聚醯亞胺前驅物(A-2)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係20,000。下述重複單元的莫耳比率(左側的重複單元:右側的重複單元)係80:20。 [化學式63] (Synthesis Example 2) [from pyromellitic dianhydride, 4,4'-oxydiphenylamine, N-(3'-ethynylphenyl)-3,5-diaminobenzimidamide (compound ( 1)-1) and polyethylenimine precursor of 2-hydroxyethyl methacrylate (A-2: polyethylenimine precursor having a radical polymerizable group)] 14.06 g (64.5 mmol) Ear) pyromellitic dianhydride (dried at 140 ° C for 12 hours), 18.6 g (129 mmol) 2-hydroxyethyl methacrylate, 0.05 g hydroquinone, 10.7 g pyridine and 140 g NMP (N -Methyl-2-pyrrolidone) was mixed and stirred at a temperature of 60 ° C for 18 hours to produce a diester of pyromellitic acid and 2-hydroxyethyl methacrylate. Next, the reaction mixture was cooled to -10 ° C, and while maintaining the temperature at -10 ± 4 ° C, 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes. After diluting with 50 ml of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, 9.403 g (46.96 mmol) of 4,4'-oxydiphenylamine and 2.950 g (11.74 mmol) of N-(3'-ethynylphenyl)-3,5-diaminobenzimidamide A solution of the amine dissolved in 100 ml of N-methylpyrrolidone was added dropwise to the reaction mixture at 20 to 23 ° C for 20 minutes. Next, the reaction mixture was stirred at room temperature for 1 Torr. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimine precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimine precursor was filtered and removed, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure to obtain a polyimine precursor (A-2). As a result of GPC measurement of the polyimine precursor (A-2), the weight average molecular weight (Mw) was 20,000 as a value in terms of polystyrene. The molar ratio of the repeating unit described below (repeating unit on the left side: repeating unit on the right side) is 80:20. [Chemical Formula 63]

(合成例3) [源自4,4’-氧二鄰苯二甲酸二酐、對苯二胺、N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺(化合物(1)-1)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-3:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)4,4’-氧二鄰苯二甲酸二酐(於140℃下乾燥了12小時)、18.6g(129毫莫耳)甲基丙烯酸2-羥乙酯、0.05g對苯二酚、10.7g吡啶、140g二甘醇二甲醚進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸與甲基丙烯酸2-羥乙酯的二酯。接著,將反應混合物冷卻至-10℃,將溫度保持-10±4℃的同時經10分鐘加入了16.12g(135.5毫莫耳)SOCl2 。用50ml的N-甲基吡咯烷酮稀釋之後,將反應混合物於室溫下攪拌了2小時。接著,將5.078g(46.96毫莫耳)對苯二胺及2.950g(11.74毫莫耳)N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺溶解於100ml的N-甲基吡咯烷酮而成之溶液於20~23℃下經20分鐘滴於到反應混合物中。接著,將反應混合物於室溫下攪拌了1晩。接著,於5升的水中使聚醯亞胺前驅物沉澱,以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。對聚醯亞胺前驅物進行過濾而去除,於4升的水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下將所得到之聚醯亞胺前驅物於45℃下乾燥3天而得到了聚醯亞胺前驅物(A-3)。 對該聚醯亞胺前驅物(A-3)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係20,000。下述重複單元的莫耳比率(左側的重複單元:右側的重複單元)係80:20。 [化學式64] (Synthesis Example 3) [From 4,4'-oxydiphthalic dianhydride, p-phenylenediamine, N-(3'-ethynylphenyl)-3,5-diaminobenzamide (Synthesis of Compound (1)-1) and Polyethylenimine Precursor of 2-Hydroxyethyl Methacrylate (A-3: Polyethylenimine Precursor with Radical Polymerizable Group)] 20.0 g ( 64.5 millimoles of 4,4'-oxydiphthalic dianhydride (dried at 140 ° C for 12 hours), 18.6 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of p-benzoic acid Diphenol, 10.7 g of pyridine, and 140 g of diglyme were mixed and stirred at 60 ° C for 18 hours to produce 4,4'-oxydiphthalic acid and 2-hydroxyethyl methacrylate. Diester. Next, the reaction mixture was cooled to -10 ° C, and while maintaining the temperature at -10 ± 4 ° C, 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes. After diluting with 50 ml of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, 5.078 g (46.96 mmol) of p-phenylenediamine and 2.950 g (11.74 mmol) of N-(3'-ethynylphenyl)-3,5-diaminobenzimidamide were dissolved in 100 ml. A solution of N-methylpyrrolidone was added to the reaction mixture at 20 to 23 ° C for 20 minutes. Next, the reaction mixture was stirred at room temperature for 1 Torr. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimine precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimine precursor was filtered and removed, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure to obtain a polyimine precursor (A-3). As a result of GPC measurement of the polyimine precursor (A-3), the weight average molecular weight (Mw) was 20,000 as a value in terms of polystyrene. The molar ratio of the repeating unit described below (repeating unit on the left side: repeating unit on the right side) is 80:20. [Chemical Formula 64]

(合成例4) [來自4,4’-氧二鄰苯二甲酸二酐、N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺(化合物(1)-1)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-4:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)4,4’-氧二鄰苯二甲酸二酐(於140℃下乾燥了12小時)、18.6g(129毫莫耳)甲基丙烯酸2-羥乙酯、0.05g對苯二酚、10.7g吡啶及140g二甘醇二甲醚進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸與甲基丙烯酸2-羥乙酯的二酯。接著,將反應混合物冷卻至-10℃,將溫度保持-10±4℃的同時經10分鐘加入了16.12g(135.5毫莫耳)SOCl2 。用50ml的N-甲基吡咯烷酮稀釋之後,將反應混合物於室溫下攪拌了2小時。接著,將14.750g(58.70毫莫耳)N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺溶解於100ml的N-甲基吡咯烷酮而成之溶液於20~23℃下經20分鐘滴加到反應混合物中。接著,將反應混合物於室溫下攪拌了1晩。接著,於5升的水中使聚醯亞胺前驅物沉澱,以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。對聚醯亞胺前驅物進行過濾而去除,於4升的水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下將所得到之聚醯亞胺前驅物於45℃下乾燥3天而得到了聚醯亞胺前驅物(A-4)。 對該聚醯亞胺前驅物(A-4)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係22,000。 [化學式65] (Synthesis Example 4) [from 4,4'-oxydiphthalic dianhydride, N-(3'-ethynylphenyl)-3,5-diaminobenzimidamide (compound (1)- 1) Synthesis of polyethylenimine precursor of 2-hydroxyethyl methacrylate (A-4: Polyethylenimine precursor having radical polymerizable group)] 20.0 g (64.5 mmol) 4 4'-oxydiphthalic dianhydride (dried at 140 ° C for 12 hours), 18.6 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.7 g of pyridine The mixture was mixed with 140 g of diglyme and stirred at a temperature of 60 ° C for 18 hours to produce a diester of 4,4'-oxydiphthalic acid and 2-hydroxyethyl methacrylate. Next, the reaction mixture was cooled to -10 ° C, and while maintaining the temperature at -10 ± 4 ° C, 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes. After diluting with 50 ml of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, 14.750 g (58.70 mmol) of N-(3'-ethynylphenyl)-3,5-diaminobenzimidamide was dissolved in 100 ml of N-methylpyrrolidone to obtain a solution of 20 to 20 It was added dropwise to the reaction mixture at 23 ° C over 20 minutes. Next, the reaction mixture was stirred at room temperature for 1 Torr. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimine precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimine precursor was filtered and removed, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure to obtain a polyimine precursor (A-4). As a result of GPC measurement of the polyimine precursor (A-4), the weight average molecular weight (Mw) was 22,000 as a value in terms of polystyrene. [Chemical Formula 65]

(合成例5) [源自4,4’-氧二鄰苯二甲酸二酐、間聯甲苯胺、N-(4’-乙炔基苯基)-3,5-二胺基苯甲醯胺(化合物(1)-1)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-5:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將合成例1的9.403g(46.96毫莫耳)4,4’-氧二苯胺變更為9.970g(46.96毫莫耳)間聯甲苯胺,除此以外,進行與合成例1相同的操作而得到了聚醯亞胺前驅物(A-5)。 對該聚醯亞胺前驅物(A-5)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係21,000。下述重複單元的莫耳比率(左側的重複單元:右側的重複單元)係80:20。 [化學式66] (Synthesis Example 5) [From 4,4'-oxydiphthalic dianhydride, m-toluidine, N-(4'-ethynylphenyl)-3,5-diaminobenzamide Synthesis of (Compound (1)-1) and Polyethylenimine Precursor of 2-Hydroxyethyl Methacrylate (A-5: Polyethylenimine Precursor with Radical Polymerizable Group)] Synthesis Example 1 The same operation as in Synthesis Example 1 was carried out except that 9.403 g (46.96 mmol) of 4,4'-oxydiphenylamine was changed to 9.970 g (46.96 mmol) of m-toluidine. Amine precursor (A-5). As a result of GPC measurement of the polyimine precursor (A-5), the weight average molecular weight (Mw) was 21,000 as a value in terms of polystyrene. The molar ratio of the repeating unit described below (repeating unit on the left side: repeating unit on the right side) is 80:20. [Chemical Formula 66]

(合成例6) [源自4,4’-氧二鄰苯二甲酸二酐、4,4’-氧二苯胺、N-(4’-乙炔基苯基)-3,5-二胺基苯甲醯胺(化合物(1)-2)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-6:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將合成例1的2.950g(11.74毫莫耳)N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺變更為2.950g(11.74毫莫耳)N-(4’-乙炔基苯基)-3,5-二胺基苯甲醯胺,除此以外,進行與合成例1相同的操作而得到了聚醯亞胺前驅物(A-6)。 對該聚醯亞胺前驅物(A-6)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係25,000。下述重複單元的莫耳比率(左側的重複單元:右側的重複單元)係80:20。 [化學式67] (Synthesis Example 6) [From 4,4'-oxydiphthalic dianhydride, 4,4'-oxydiphenylamine, N-(4'-ethynylphenyl)-3,5-diamino group Synthesis of benzamide (compound (1)-2) and polyethylenimine precursor of 2-hydroxyethyl methacrylate (A-6: polyethylenimine precursor having radical polymerizable group) 2.950 g (11.74 mmol) of N-(3'-ethynylphenyl)-3,5-diaminobenzamide of Synthesis Example 1 was changed to 2.950 g (11.74 mmol) N-(4) A polyimine precursor (A-6) was obtained in the same manner as in Synthesis Example 1, except that the compound was subjected to the same procedure as in Synthesis Example 1. As a result of GPC measurement of the polyimine precursor (A-6), the weight average molecular weight (Mw) was 25,000 as a value in terms of polystyrene. The molar ratio of the repeating unit described below (repeating unit on the left side: repeating unit on the right side) is 80:20. [Chemical Formula 67]

(合成例7) [源自4,4’-氧二鄰苯二甲酸二酐、4,4’-氧二苯胺、N-(3’、5’-二乙炔基苯基)-3,5-二胺基苯甲醯胺(化合物(1)-10)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-7:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將合成例1的2.950g(11.74毫莫耳)N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺變更為3.232g(11.74毫莫耳)N-(3’、5’-二乙炔基苯基)-3,5-二胺基苯甲醯胺,除此以外,進行與合成例1相同的操作而得到了聚醯亞胺前驅物(A-7)。 對該聚醯亞胺前驅物(A-7)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係26,000。下述重複單元的莫耳比率(左側的重複單元:右側的重複單元)係80:20。 [化學式68] (Synthesis Example 7) [From 4,4'-oxydiphthalic dianhydride, 4,4'-oxydiphenylamine, N-(3', 5'-diethynylphenyl)-3,5 a polyamidiamine precursor of diaminobenzimidamide (compound (1)-10) and 2-hydroxyethyl methacrylate (A-7: a polyimide intermediate having a radical polymerizable group) Synthesis] 2.950 g (11.74 mmol) of N-(3'-ethynylphenyl)-3,5-diaminobenzamide of Synthesis Example 1 was changed to 3.232 g (11.74 mmol) In the same manner as in Synthesis Example 1, except that N-(3',5'-diethynylphenyl)-3,5-diaminobenzamide was obtained, a polyimine precursor was obtained. A-7). As a result of GPC measurement of the polyimine precursor (A-7), the weight average molecular weight (Mw) was 26,000 as a value in terms of polystyrene. The molar ratio of the repeating unit described below (repeating unit on the left side: repeating unit on the right side) is 80:20. [Chemical Formula 68]

(合成例8) [源自4,4’-氧二鄰苯二甲酸二酐、4,4’-氧二苯胺、1-(3-乙炔基苯基)-3-(3,5-二胺基苯基)脲基(化合物(1)-24)及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(A-8:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將合成例1的2.950g(11.74毫莫耳)N-(3’-乙炔基苯基)-3,5-二胺基苯甲醯胺變更為2.950g(11.74毫莫耳)1-(3-乙炔基苯基)-3-(3,5-二胺基苯基)脲基,除此以外,進行與合成例1相同的操作而得到了聚醯亞胺前驅物(A-8)。 對該聚醯亞胺前驅物(A-8)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係19,000。下述重複單元的莫耳比率(左側的重複單元:右側的重複單元)係80:20。 [化學式69] (Synthesis Example 8) [From 4,4'-oxydiphthalic dianhydride, 4,4'-oxydiphenylamine, 1-(3-ethynylphenyl)-3-(3,5-di Aminophenyl)ureido (Compound (1)-24) and a polyamidiamine precursor of 2-hydroxyethyl methacrylate (A-8: Polyethylenimine precursor having a radical polymerizable group) Synthesis] 2.950 g (11.74 mmol) of N-(3'-ethynylphenyl)-3,5-diaminobenzamide of Synthesis Example 1 was changed to 2.950 g (11.74 mmol) In the same manner as in Synthesis Example 1, except that the (3-ethynylphenyl)-3-(3,5-diaminophenyl)ureido group was obtained, a polyimine precursor (A- 8). As a result of GPC measurement of the polyimine precursor (A-8), the weight average molecular weight (Mw) was 19,000 as a value in terms of polystyrene. The molar ratio of the repeating unit described below (repeating unit on the left side: repeating unit on the right side) is 80:20. [Chemical Formula 69]

(合成例9) [源自4,4’-氧二鄰苯二甲酸二酐、4,4’-氧二苯胺及甲基丙烯酸2-羥乙酯的聚醯亞胺前驅物(比較例用聚合物 R-1:具有自由基聚合性基之聚醯亞胺前驅物)的合成] 將20.0g(64.5毫莫耳)4,4’-氧二鄰苯二甲酸二酐(於140℃下乾燥了12小時)、18.6g(129毫莫耳)甲基丙烯酸2-羥乙酯、0.05g對苯二酚、10.7g吡啶、140g二甘醇二甲醚進行混合,於60℃的溫度下攪拌18小時而製造了4,4’-氧二鄰苯二甲酸與甲基丙烯酸2-羥乙酯的二酯。接著,將反應混合物冷卻至-10℃,將溫度保持-10±4℃的同時經10分鐘加入了16.12g(135.5毫莫耳)SOCl2 。用50ml的N-甲基吡咯烷酮稀釋之後,將反應混合物於室溫下攪拌了2小時。接著,將11.75g(58.70毫莫耳)的4,4’-氧二苯胺溶解於100ml的N-甲基吡咯烷酮而成之溶液於20~23℃下經20分鐘滴加到反應混合物中。接著,將反應混合物於室溫下攪拌了1晩。接著,於5升的水中使聚醯亞胺前驅物沉澱,以5000rpm的速度將水-聚醯亞胺前驅物混合物攪拌了15分鐘。對聚醯亞胺前驅物進行過濾而去除,於4升的水中再次攪拌30分鐘並再次進行了過濾。接著,於減壓下將所得到之聚醯亞胺前驅物於45℃下乾燥3天而得到了比較例用聚醯亞胺前驅物(R-1)。 對該聚醯亞胺前驅物(R-1)進行了GPC測定之結果,作為聚苯乙烯換算值,重量平均分子量(Mw)係25,000。 [化學式70] (Synthesis Example 9) [Polyimine precursor derived from 4,4'-oxydiphthalic dianhydride, 4,4'-oxydiphenylamine and 2-hydroxyethyl methacrylate (for comparison example) Synthesis of polymer R-1: polyethylenimine precursor having a radical polymerizable group] 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic dianhydride (at 140 ° C) Dried for 12 hours), 18.6 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.7 g of pyridine, 140 g of diglyme, mixed at 60 ° C The diester of 4,4'-oxydiphthalic acid and 2-hydroxyethyl methacrylate was produced by stirring for 18 hours. Next, the reaction mixture was cooled to -10 ° C, and while maintaining the temperature at -10 ± 4 ° C, 16.12 g (135.5 mmol) of SOCl 2 was added over 10 minutes. After diluting with 50 ml of N-methylpyrrolidone, the reaction mixture was stirred at room temperature for 2 hours. Next, a solution obtained by dissolving 11.75 g (58.70 mmol) of 4,4'-oxydiphenylamine in 100 ml of N-methylpyrrolidone was added dropwise to the reaction mixture at 20 to 23 ° C for 20 minutes. Next, the reaction mixture was stirred at room temperature for 1 Torr. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimine precursor mixture was stirred at 5000 rpm for 15 minutes. The polyimine precursor was filtered and removed, stirred again in 4 liters of water for 30 minutes and filtered again. Next, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure to obtain a polyimine precursor (R-1) for comparative use. As a result of GPC measurement of the polyimine precursor (R-1), the weight average molecular weight (Mw) was 25,000 as a value in terms of polystyrene. [Chemical Formula 70]

<實施例及比較例> 將下述記載的成分進行混合,作為均勻的溶液而製備了感光性樹脂組成物的塗佈液。 <感光性樹脂組成物的組成> 聚醯亞胺前驅物:將表1或表2中所記載之聚醯亞胺前驅物設為表1或表2中所記載之質量份 光自由基聚合起始劑:將表1或表2中所記載之光自由基聚合起始劑設為表1或表2中所記載之質量份 自由基聚合性化合物:將表1或表2中所記載之自由基聚合性化合物設為表1或表2中所記載之質量份 其他成分:將除了表1或表2中所記載之上述以外的成分設為表1或表2中所記載之質量份<Examples and Comparative Examples> The components described below were mixed, and a coating liquid of a photosensitive resin composition was prepared as a uniform solution. <Composition of Photosensitive Resin Composition> Polyimine precursor: The polyimine precursor described in Table 1 or Table 2 is a photo-radical polymerization of the mass parts described in Table 1 or Table 2 Starting agent: The photoradical polymerization initiator described in Table 1 or Table 2 is a mass fraction of a radically polymerizable compound described in Table 1 or Table 2: the freedom described in Table 1 or Table 2 The base polymerizable compound is a component of the mass component described in Table 1 or Table 2: the components other than those described in Table 1 or Table 2 are the mass parts described in Table 1 or Table 2.

[表1] [表2] [Table 1] [Table 2]

(B)自由基聚合起始劑 B-1:IRGACURE OXE 01(BASF公司製) B-2:IRGACURE OXE 02(BASF公司製) B-3:IRGACURE 369(BASF公司製)(B) Radical polymerization initiator B-1: IRGACURE OXE 01 (manufactured by BASF Corporation) B-2: IRGACURE OXE 02 (manufactured by BASF Corporation) B-3: IRGACURE 369 (manufactured by BASF Corporation)

(C)自由基聚合性化合物 C-1:二季戊四醇六(甲基)丙烯酸酯、A-DPH(Shin-Nakamura Chemical Co., Ltd.製) C-2:SR-209(Sartomer Company, Inc製) [化學式71]C-3:二季戊四醇四丙烯酸酯、A-TMMT(Shin-Nakamura Chemical Co., Ltd.製)(C) Radical Polymerizable Compound C-1: Dipentaerythritol Hexa(meth)acrylate, A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.) C-2: SR-209 (manufactured by Sartomer Company, Inc.) ) [Chemical Formula 71] C-3: dipentaerythritol tetraacrylate, A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)

(D)聚合抑制劑 D-1:2,6-二-第三丁基-4-甲基苯酚(Tokyo Chemical Industry Co., Ltd.製) D-2:對苯醌(Tokyo Chemical Industry Co., Ltd.製) D-3:對甲氧基苯酚(Tokyo Chemical Industry Co., Ltd.製) (E)遷移抑制劑 E-1:下述化合物 E-2:下述化合物 E-3:下述化合物 E-4:下述化合物(D) Polymerization inhibitor D-1: 2,6-di-t-butyl-4-methylphenol (manufactured by Tokyo Chemical Industry Co., Ltd.) D-2: p-benzoquinone (Tokyo Chemical Industry Co.) , Ltd.) D-3: p-methoxyphenol (manufactured by Tokyo Chemical Industry Co., Ltd.) (E) migration inhibitor E-1: the following compound E-2: the following compound E-3: Compound E-4: the following compounds

(F)金屬黏著性改良劑 F-1:下述化合物 F-2:下述化合物 F-3:下述化合物(F) Metal adhesion improver F-1: The following compounds F-2: the following compounds F-3: the following compounds

[化學式72] [Chemical Formula 72]

(G)鹼產生劑 G-1(光鹼產生劑):下述化合物 [化學式73]G-2(光鹼產生劑):下述化合物 [化學式74]G-3(熱鹼產生劑):下述化合物 [化學式75] (G) base generator G-1 (photobase generator): the following compound [Chemical Formula 73] G-2 (photobase generator): the following compound [Chemical Formula 74] G-3 (thermobase generator): the following compound [Chemical Formula 75]

(H)溶劑 H-1:γ-丁內酯(SANWAYUKA INDUSTRY CORPORATION製) H-2:二甲基亞碸(Wako Pure Chemical Industries, Ltd.製) H-3:N-甲基-2-吡咯烷酮(Ashland Inc.製)(H) Solvent H-1: γ-butyrolactone (manufactured by SANWAYUKA INDUSTRY CORPORATION) H-2: dimethyl hydrazine (manufactured by Wako Pure Chemical Industries, Ltd.) H-3: N-methyl-2-pyrrolidone (made by Ashland Inc.)

<評價> <<斷裂伸長率>> 使各感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器而對其進行加壓過濾之後,藉由旋轉塗佈法將感光性樹脂組成物塗佈到矽晶圓上。將塗佈有感光性樹脂組成物層之矽晶圓於加熱板上,於100℃下乾燥5分鐘而於矽晶圓上形成了厚度20μm的均勻的感光性樹脂組成物層。使用步進機(Nikon NSR 2005 i9C),於曝光波長365nm下,以500mJ/cm2 的曝光能量對矽晶圓上的感光性樹脂組成物層進行全面曝光,於氮環境下,以10℃/分鐘的升溫速度升溫而達到250℃之後,對經曝光之感光性樹脂組成物層(樹脂層)加熱了3小時。將硬化後的樹脂層浸漬於4.9質量%氫氟酸溶液中,從矽晶圓剝離樹脂層而得到了樹脂層(硬化膜)。<Evaluation><<Elongation at break>> After each photosensitive resin composition was subjected to pressure filtration through a filter having a pore width of 0.8 μm, the photosensitive resin composition was coated by a spin coating method. The cloth is placed on the wafer. The tantalum wafer coated with the photosensitive resin composition layer was dried on a hot plate at 100 ° C for 5 minutes to form a uniform photosensitive resin composition layer having a thickness of 20 μm on the tantalum wafer. Using a stepping machine (Nikon NSR 2005 i9C), the photosensitive resin composition layer on the ruthenium wafer was exposed at an exposure wavelength of 365 nm at an exposure energy of 500 mJ/cm 2 under a nitrogen atmosphere at 10 ° C / After the temperature rise rate of the minute was raised to 250 ° C, the exposed photosensitive resin composition layer (resin layer) was heated for 3 hours. The cured resin layer was immersed in a 4.9 mass% hydrofluoric acid solution, and the resin layer was peeled off from the tantalum wafer to obtain a resin layer (cured film).

如下求出於上述中得到之樹脂層(硬化膜)的斷裂伸長率。 首先,將於上述中剝離之樹脂層(硬化膜)切成寬度10mm、長度50mm的薄膜狀,用拉伸測試儀(TENSILON)將十字頭速度設為300mm/分鐘,就薄膜的長邊(長度)方向、寬度方向,於25℃、65%相對濕度(RH)的環境下依照JIS-K6251而測定了斷裂伸長。將長邊方向、寬度方向各自的斷裂伸長的測定各進行了5次。將長邊方向與寬度方向的斷裂伸長率的平均值設為斷裂伸長率。 A:大於80%。 B:大於70%且為80%以下。 C:大於60%且為70%以下。 D:大於50%且為60%以下。 E:為50%以下。The elongation at break of the resin layer (cured film) obtained in the above was determined as follows. First, the resin layer (cured film) which was peeled off in the above was cut into a film shape having a width of 10 mm and a length of 50 mm, and the crosshead speed was set to 300 mm/min by a tensile tester (TENSILON), and the long side (length) of the film was obtained. In the direction and width direction, the elongation at break was measured in accordance with JIS-K6251 in an environment of 25 ° C and 65% relative humidity (RH). The measurement of the elongation at break in the longitudinal direction and the width direction was carried out five times each. The average value of the elongation at break in the longitudinal direction and the width direction is defined as the elongation at break. A: More than 80%. B: more than 70% and less than 80%. C: more than 60% and 70% or less. D: more than 50% and less than 60%. E: 50% or less.

<<曝光寬容度>> 使各感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器並以0.3MPa的壓力進行加壓過濾之後,藉由旋轉塗佈法將感光性樹脂組成物塗佈在矽晶圓上。於100℃下,將塗佈有感光性樹脂組成物之矽晶圓於加熱板上乾燥5分鐘而於矽晶圓上形成了10μm的膜厚均勻的感光性樹脂組成物層。使用步進機(Nikon NSR 2005 i9C)對矽晶圓上的感光性樹脂組成物層進行了曝光。曝光利用i射線進行,且於波長365nm下,以200、300、400、500、600、700、800mJ/cm2 的各曝光能量從5μm至25μm使用1μm增量的線和空間的光遮罩進行曝光而得到了樹脂層。<<Exposure latitude>> After each photosensitive resin composition was passed through a filter having a pore width of 0.8 μm and subjected to pressure filtration at a pressure of 0.3 MPa, the photosensitive resin composition was coated by a spin coating method. The cloth is on the wafer. The tantalum wafer coated with the photosensitive resin composition was dried on a hot plate at 100 ° C for 5 minutes to form a photosensitive resin composition layer having a uniform thickness of 10 μm on the tantalum wafer. The photosensitive resin composition layer on the germanium wafer was exposed using a stepper (Nikon NSR 2005 i9C). The exposure is performed using i-rays, and at a wavelength of 365 nm, each exposure energy of 200, 300, 400, 500, 600, 700, 800 mJ/cm 2 is performed from 5 μm to 25 μm using a line mask of 1 μm increments of lines and spaces. The resin layer was obtained by exposure.

利用環戊酮對上述中得到之樹脂層進行了60秒鐘的負型顯影。所得到之樹脂層(圖案)的線寬度越小表示光照射部與光非照射部對顯影液的溶解性之差越變大,且成為較佳的結果。又,對於曝光能量的變化,若線寬度的變化小,則表示曝光寬容度大,且成為較佳的結果。測定界限為5μm。 A:5μm以上且8μm以下。 B:大於8μm且10μm以下。 C:大於10μm且15μm以下。 D:大於15μm且20μm以下。 E:大於20μm。 F:未能得到具有具備邊緣銳度之線寬度之圖案。The resin layer obtained above was subjected to negative development for 60 seconds using cyclopentanone. The smaller the line width of the obtained resin layer (pattern), the larger the difference in solubility of the light-irradiating portion and the non-irradiated portion with respect to the developer, and the better the result. Further, when the change in the exposure light is small, the change in the line width is small, indicating that the exposure latitude is large, and this is a preferable result. The measurement limit was 5 μm. A: 5 μm or more and 8 μm or less. B: more than 8 μm and 10 μm or less. C: more than 10 μm and 15 μm or less. D: more than 15 μm and 20 μm or less. E: more than 20 μm. F: A pattern having a line width with edge sharpness was not obtained.

<<剝離缺陷評價(層間黏附性)>> <<<積層體(1)的製造>>> 使各感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器而對其進行加壓過濾之後,藉由旋轉塗佈法將感光性樹脂組成物塗佈到矽晶圓上。將塗佈有感光性樹脂組成物層之矽晶圓於加熱板上,於100℃下乾燥5分鐘而於矽晶圓上形成了厚度15μm的均勻的感光性樹脂組成物層。接著,使用步進機(Nikon NSR 2005 i9C),於曝光波長365nm下,以500mJ/cm2 的曝光能量對矽晶圓上的感光性樹脂組成物層進行曝光,用環戊酮顯影60秒鐘而形成了直徑10μm的孔。接著,於氮環境下,以10℃/分鐘的升溫速度升溫而達到250℃之後,加熱了3小時。冷卻至室溫之後,於樹脂層的表面,再次使用種類與上述感光性樹脂組成物相同之感光性樹脂組成物,與上述相同而再次實施感光性樹脂組成物的過濾至經圖案化之膜的3小時加熱的製程而形成了具有兩層樹脂層之積層體(1)。<<Peel defect evaluation (interlayer adhesion)>><<<Production of laminated body (1)>>> Each photosensitive resin composition was subjected to pressure filtration through a filter having a pore width of 0.8 μm. Thereafter, the photosensitive resin composition was applied onto the tantalum wafer by a spin coating method. The tantalum wafer coated with the photosensitive resin composition layer was dried on a hot plate at 100 ° C for 5 minutes to form a uniform photosensitive resin composition layer having a thickness of 15 μm on the tantalum wafer. Next, using a stepping machine (Nikon NSR 2005 i9C), the photosensitive resin composition layer on the ruthenium wafer was exposed at an exposure wavelength of 365 nm at an exposure energy of 500 mJ/cm 2 , and developed with cyclopentanone for 60 seconds. A hole having a diameter of 10 μm was formed. Subsequently, the temperature was raised at a temperature elevation rate of 10 ° C /min in a nitrogen atmosphere to 250 ° C, and then heated for 3 hours. After cooling to room temperature, the same photosensitive resin composition as that of the above-mentioned photosensitive resin composition was used again on the surface of the resin layer, and the photosensitive resin composition was again filtered to the patterned film in the same manner as described above. A layered body (1) having two resin layers was formed by a 3-hour heating process.

<<<積層體(2)的製造>>> 於上述中得到之積層體(1)的表面,使用種類與於積層體(1)的製造中所使用之感光性樹脂組成物相同之感光性樹脂組成物,藉由再次實施與積層體(1)的製造相同的製程而製作了具有4層樹脂層之積層體(2)。<<<Production of the laminated body (2)>>> The surface of the laminated body (1) obtained above is the same as the photosensitive resin composition used for the production of the laminated body (1). The resin composition was produced by the same process as the production of the laminated body (1), and a laminate (2) having four resin layers was produced.

<<<積層體(3)的製造>>> 使各感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器而對其進行加壓過濾之後,藉由旋轉塗佈法將感光性樹脂組成物塗佈到矽晶圓上。將塗佈有感光性樹脂組成物層之矽晶圓於加熱板上,於100℃下乾燥5分鐘而於矽晶圓上形成了厚度15μm的均勻的感光性樹脂組成物層。使用步進機(Nikon NSR 2005 i9C),以500mJ/cm2 的曝光能量對矽晶圓上的感光性樹脂組成物層進行曝光,用環戊酮對經曝光之感光性樹脂組成物層(樹脂層)進行60秒鐘的顯影而形成了直徑10μm的孔。接著,於氮環境下,以10℃/分鐘的升溫速度升溫而達到250℃之後,加熱了3小時。冷卻至室溫之後,以覆蓋上述孔部分之方式,於感光性樹脂組成物層的表面的一部分,藉由蒸鍍法形成了厚度2μm的銅薄層(金屬層)。進而,於金屬層及感光性樹脂組成物層的表面,再次使用種類相同的感光性樹脂組成物,與上述相同而再次實施感光性樹脂組成物的濾過至經圖案化之膜的3小時加熱的製程而製作了由樹脂層/金屬層/樹脂層構成之積層體(3)。<<<Production of the laminated body (3)>>> The photosensitive resin composition was subjected to pressure filtration through a filter having a pore width of 0.8 μm, and then the photosensitive resin was spin-coated. The composition is applied to a tantalum wafer. The tantalum wafer coated with the photosensitive resin composition layer was dried on a hot plate at 100 ° C for 5 minutes to form a uniform photosensitive resin composition layer having a thickness of 15 μm on the tantalum wafer. The photosensitive resin composition layer on the ruthenium wafer was exposed with an exposure energy of 500 mJ/cm 2 using a stepper (Nikon NSR 2005 i9C), and the exposed photosensitive resin composition layer (resin was exposed with cyclopentanone) The layer was developed for 60 seconds to form a hole having a diameter of 10 μm. Subsequently, the temperature was raised at a temperature elevation rate of 10 ° C /min in a nitrogen atmosphere to 250 ° C, and then heated for 3 hours. After cooling to room temperature, a copper thin layer (metal layer) having a thickness of 2 μm was formed by vapor deposition on a part of the surface of the photosensitive resin composition layer so as to cover the above-mentioned pore portion. Further, on the surface of the metal layer and the photosensitive resin composition layer, the same photosensitive resin composition was used again, and the photosensitive resin composition was again filtered and heated to the patterned film for 3 hours in the same manner as described above. A laminate (3) composed of a resin layer/metal layer/resin layer was produced by the process.

<<<積層體(4)的製造>>> 於上述積層體(3)的表面,進而藉由與積層體(3)相同的方法交替製作銅薄層(金屬層)與樹脂層而製作了由樹脂層/金屬層/樹脂層/金屬層/樹脂層/金屬層/樹脂層構成之積層體(4)。<<<Production of the laminated body (4)>>> On the surface of the laminated body (3), a copper thin layer (metal layer) and a resin layer were alternately produced by the same method as the laminated body (3). A laminate (4) composed of a resin layer/metal layer/resin layer/metal layer/resin layer/metal layer/resin layer.

<<<剝離缺陷評價A(未進行加熱處理)>>> 對於上述中得到之各積層體的樹脂層面,以於垂直方向上寬度成為5mm之方式,分別切取樹脂層與樹脂層相接之部分和金屬層與樹脂層相接之部分,用光學顯微鏡確認了從其剖面觀察時,一個切片中的樹脂層/樹脂層間及金屬層/樹脂層之間有無剝離。此外,倍率依剝離部位的大小而適當調整。剝離的產生與樹脂層/樹脂層間、金屬層/樹脂層之間的剝離無關而確認整體上的個數,若不存在剝離的產生,則表示具有優異之黏著性,且成為較佳的結果。 A:未產生剝離 B:1~2個產生剝離 C:3~5個產生剝離 D:6個以上產生剝離<<<Release defect evaluation A (without heat treatment)>>> The resin layer of each of the laminates obtained above was cut out so that the resin layer and the resin layer were joined in such a manner that the width in the vertical direction was 5 mm. When the metal layer and the resin layer were in contact with each other, it was confirmed by optical microscopy whether or not peeling occurred between the resin layer/resin layer and the metal layer/resin layer in one slice when viewed from the cross section. Further, the magnification is appropriately adjusted depending on the size of the peeled portion. The occurrence of peeling was confirmed irrespective of the peeling between the resin layer/resin layer and the metal layer/resin layer, and the number of the entire peeling was confirmed. If there was no occurrence of peeling, it showed excellent adhesion and was a preferable result. A: No peeling occurred B: 1 to 2 peeling occurred C: 3 to 5 peeling occurred D: 6 or more peeling occurred

<<<剝離缺陷評價B(加熱處理後)>>> 於氮中300℃下對於上述中得到之各積層體加熱了3小時。然後,對各積層體的樹脂層面,以垂直方向上的寬度成為5mm之方式,分別切取樹脂層與樹脂層相接之部分和金屬層與樹脂層相接之部分,用光學顯微鏡確認了從其剖面觀察時,一個切片中的樹脂層/樹脂層間及金屬層/樹脂層之間有無剝離。剝離的產生與樹脂層/樹脂層間、金屬層/樹脂層之間的剝離無關而確認整體上的個數,若不存在剝離的產生,則表示具有優異之黏著性,且成為較佳的結果。 A:未產生剝離 B:1~2個產生剝離 C:3~5個產生剝離 D:6個以上產生剝離 [表3] 上述表3中的曝光寬容度的200~800的數字表示曝光能量(單位:mJ/cm2 )。<<<Peel Defect Evaluation B (after heat treatment)>>> Each of the laminates obtained above was heated at 300 ° C for 3 hours in nitrogen. Then, the resin layer of each laminated body was cut into a portion where the resin layer and the resin layer were in contact with each other, and the portion where the metal layer and the resin layer were in contact with each other, and the optical layer was confirmed by an optical microscope. When the cross section is observed, there is no peeling between the resin layer/resin layer and the metal layer/resin layer in one slice. The occurrence of peeling was confirmed irrespective of the peeling between the resin layer/resin layer and the metal layer/resin layer, and the number of the entire peeling was confirmed. If there was no occurrence of peeling, it showed excellent adhesion and was a preferable result. A: No peeling occurred B: 1 to 2 peeling occurred C: 3 to 5 peeling occurred D: 6 or more peeling occurred [Table 3] The numbers of 200 to 800 of the exposure latitude in Table 3 above indicate the exposure energy (unit: mJ/cm 2 ).

[表4] [Table 4]

[表5] [table 5]

<實施例100> 使實施例1的感光性樹脂組成物通過細孔的寬度為0.8μm的過濾器並以0.3MPa的壓力進行加壓過濾之後,將其旋轉塗佈在於表面形成有銅薄層之基板上(3500rpm、30秒鐘)。於100℃下將應用於基板之感光性樹脂組成物乾燥5分鐘之後,使用曝光機(Karl-Suss MA150)進行了曝光。曝光係藉由從高壓水銀燈照射波長365nm的光來進行的。曝光之後,用環戊酮對圖像進行了75秒鐘的顯影。接著,於180℃下加熱了20分鐘。如此,形成了再配線層用層間絕緣膜。 該再配線層用層間絕緣膜的絶縁性優異。 又,使用該再配線層用層間絕緣膜製造半導體裝置之結果,確認到動作正常。<Example 100> The photosensitive resin composition of Example 1 was passed through a filter having a pore width of 0.8 μm and subjected to pressure filtration at a pressure of 0.3 MPa, and then spin-coated thereon to form a thin layer of copper on the surface. On the substrate (3500 rpm, 30 seconds). The photosensitive resin composition applied to the substrate was dried at 100 ° C for 5 minutes, and then exposed using an exposure machine (Karl-Suss MA150). The exposure was performed by irradiating light having a wavelength of 365 nm from a high pressure mercury lamp. After the exposure, the image was developed with cyclopentanone for 75 seconds. Then, it was heated at 180 ° C for 20 minutes. Thus, an interlayer insulating film for a rewiring layer is formed. The interlayer insulating film for the rewiring layer is excellent in absolute properties. Moreover, as a result of manufacturing a semiconductor device using the interlayer insulating film for a rewiring layer, it was confirmed that the operation was normal.

100‧‧‧半導體裝置100‧‧‧Semiconductor device

101a~101d‧‧‧半導體元件101a~101d‧‧‧ semiconductor components

101‧‧‧積層體101‧‧‧Layer

102b~102d‧‧‧貫通電極102b~102d‧‧‧through electrodes

103a~103e‧‧‧金屬凸塊103a~103e‧‧‧Metal bumps

105‧‧‧再配線層105‧‧‧Rewiring layer

110、110a、110b‧‧‧底部填充層110, 110a, 110b‧‧‧ underfill layer

115‧‧‧絕緣膜115‧‧‧Insulation film

120‧‧‧配線基板120‧‧‧Wiring substrate

120a‧‧‧表面電極120a‧‧‧ surface electrode

圖1係表示半導體裝置的一實施形態的結構之概略圖。Fig. 1 is a schematic view showing a configuration of an embodiment of a semiconductor device.

Claims (25)

一種感光性樹脂組成物,其含有包含由下述式(1)表示之重複單元之聚醯亞胺前驅物及光自由基聚合起始劑; 式(1)式(1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基,R115 表示4價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基;其中,R111 、R113 、R114 及R115 中的至少一個的末端中鍵結有由下述式(2)表示之基團; 式(2)式(2)中,R1 表示氫原子或取代基,*為與R111 、R113 、R114 或R115 的鍵結部位。A photosensitive resin composition containing a polyimine precursor comprising a repeating unit represented by the following formula (1) and a photoradical polymerization initiator; (1) In the formula (1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or a monovalent group. An organic group; wherein a terminal represented by the following formula (2) is bonded to a terminal of at least one of R 111 , R 113 , R 114 and R 115 ; In the formula (2), R 1 represents a hydrogen atom or a substituent, and * is a bonding site with R 111 , R 113 , R 114 or R 115 . 如申請專利範圍第1項所述之感光性樹脂組成物,其中 前述聚醯亞胺前驅物具有源自由下述式(3)表示之化合物的結構; 式(3)式(3)中,A表示(p+q)價基團;R1 表示氫原子或取代基;p表示1~5的整數;q表示2以上的整數。The photosensitive resin composition according to claim 1, wherein the polyimine precursor has a structure derived from a compound represented by the following formula (3); In the formula (3), A represents a (p+q) valent group; R 1 represents a hydrogen atom or a substituent; p represents an integer of 1 to 5; and q represents an integer of 2 or more. 如申請專利範圍第1項所述之感光性樹脂組成物,其中 前述聚醯亞胺前驅物具有源自由下述式(3a)表示之化合物的結構; 式(3a)式(3a)中,A0 表示(l+m)價基團;A1 表示單鍵或(n+1)價基團;R1 表示氫原子或取代基;Ar表示(a+1)價芳香族烴基或芳香族雜環基;a、l、m及n分別獨立地表示1~5的整數;其中,m及n中的至少一個表示2以上的整數。The photosensitive resin composition according to claim 1, wherein the polyimine precursor has a structure derived from a compound represented by the following formula (3a); In the formula (3a), A 0 represents a (l+m) valent group; A 1 represents a single bond or a (n+1) valent group; R 1 represents a hydrogen atom or a substituent; and Ar represents a (a+1) valence. The aromatic hydrocarbon group or the aromatic heterocyclic group; a, 1, m and n each independently represent an integer of 1 to 5; wherein at least one of m and n represents an integer of 2 or more. 如申請專利範圍第1項所述之感光性樹脂組成物,其中 前述聚醯亞胺前驅物具有源自由下述式(3b)表示之化合物的結構; 式(3b)式(3b)中,A0 表示(l+m)價基團;R1 表示氫原子或取代基;a、l、m及n分別獨立地表示1~5的整數;其中,m及n中的至少一個表示2以上的整數。The photosensitive resin composition according to claim 1, wherein the polyimine precursor has a structure derived from a compound represented by the following formula (3b); In the formula (3b), A 0 represents a (l+m) valent group; R 1 represents a hydrogen atom or a substituent; and a, l, m and n each independently represent an integer of 1 to 5; wherein, m and n are At least one of them represents an integer of 2 or more. 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其中 前述式(1)中,至少於R111 的末端鍵結有由式(2)表示之基團。The photosensitive resin composition according to any one of claims 1 to 4, wherein in the above formula (1), a group represented by the formula (2) is bonded to at least a terminal of the R 111 . 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其中 前述聚醯亞胺前驅物還包含由式(1-1)表示之重複單元; 式(1-1)式(1-1)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示2價有機基,R115 表示4價有機基,R113 及R114 分別獨立地表示氫原子或1價有機基;其中,由式(1-1)表示之重複單元不包含由前述式(2)表示之基團。The photosensitive resin composition according to any one of claims 1 to 4, wherein the polyimine precursor further comprises a repeating unit represented by the formula (1-1); 1) In the formula (1-1), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or A monovalent organic group; wherein the repeating unit represented by the formula (1-1) does not contain a group represented by the above formula (2). 如申請專利範圍第6項所述之感光性樹脂組成物,其中 前述式(1-1)中的R111 由-Ar-L-Ar-表示,其中,Ar分別獨立地為芳香族烴基,L為可以被氟原子取代之碳數1~10的脂肪族烴基、-O-、-CO-、-S-、-SO2 -或-NHCO-以及包含前述的兩個以上的組合之基團。The photosensitive resin composition according to claim 6, wherein R 111 in the above formula (1-1) is represented by -Ar-L-Ar-, wherein each of Ar is independently an aromatic hydrocarbon group, L It is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S-, -SO 2 - or -NHCO-, and a group containing a combination of two or more of the foregoing. 如申請專利範圍第6項所述之感光性樹脂組成物,其中 前述式(1-1)中的R111 為由下述式(51)或式(61)表示之基團; 式(51)式(51)中,R10 ~R17 分別獨立地為氫原子、氟原子或1價有機基,R10 ~R17 中的至少一個為氟原子、甲基、氟甲基、二氟甲基或三氟甲基; 式(61)式(61)中,R18 及R19 分別獨立地為氟原子、氟甲基、二氟甲基或三氟甲基。The photosensitive resin composition according to claim 6, wherein R 111 in the above formula (1-1) is a group represented by the following formula (51) or (61); In the formula (51), R 10 to R 17 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 10 to R 17 is a fluorine atom, a methyl group, a fluoromethyl group or a difluoromethyl group. Or trifluoromethyl; formula (61) In the formula (61), R 18 and R 19 each independently represent a fluorine atom, a fluoromethyl group, a difluoromethyl group or a trifluoromethyl group. 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其中 前述R113 及R114 中的至少一個包含自由基聚合性基。The photosensitive resin composition according to any one of claims 1 to 4, wherein at least one of R 113 and R 114 contains a radical polymerizable group. 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其中 前述R115 為包含芳香環之4價有機基。The photosensitive resin composition according to any one of claims 1 to 4, wherein R 115 is a tetravalent organic group containing an aromatic ring. 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其還包含自由基聚合性化合物。The photosensitive resin composition as described in any one of Claims 1 to 4 which further contains a radically polymerizable compound. 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其還包含鹼產生劑。The photosensitive resin composition according to any one of claims 1 to 4, further comprising an alkali generating agent. 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其還包含溶劑。The photosensitive resin composition according to any one of claims 1 to 4, further comprising a solvent. 如申請專利範圍第1項至第4項中任一項所述之感光性樹脂組成物,其使用於負型顯影。The photosensitive resin composition according to any one of the items 1 to 4, which is used for negative development. 如申請專利範圍第1項至第4項項中任一項所述之感光性樹脂組成物,其使用於再配線層用層間絕緣膜的形成。The photosensitive resin composition as described in any one of Claims 1 to 4 is used for formation of the interlayer insulating film for a rewiring layer. 一種硬化膜,將申請專利範圍第1項至第15項中任一項所述之感光性樹脂組成物硬化而成。A cured film obtained by curing the photosensitive resin composition according to any one of claims 1 to 15. 一種積層體,其具有兩層以上的申請專利範圍第16項所述之硬化膜。A laminate having two or more cured films as described in claim 16 of the patent application. 如申請專利範圍第17項所述之積層體,其中 於前述硬化膜之間具有金屬層。The laminate according to claim 17, wherein a metal layer is provided between the cured films. 一種硬化膜的製造方法,其包含使用申請專利範圍第1項至第15項中任一項所述之感光性樹脂組成物之情況。A method for producing a cured film, which comprises the use of the photosensitive resin composition according to any one of claims 1 to 15. 如申請專利範圍第19項所述之硬化膜的製造方法,其具有: 感光性樹脂組成物層形成製程,將前述感光性樹脂組成物應用於基板而使其成為層狀; 曝光製程,對前述感光性樹脂組成物層進行曝光;及 顯影處理製程,對經前述曝光之感光性樹脂組成物層進行顯影處理。The method for producing a cured film according to claim 19, comprising: a process for forming a photosensitive resin composition layer, applying the photosensitive resin composition to a substrate to form a layer; and exposing the process to the foregoing The photosensitive resin composition layer is subjected to exposure; and a development processing process is performed to develop the photosensitive resin composition layer exposed as described above. 如申請專利範圍第20項所述之硬化膜的製造方法,其中 前述顯影處理為負型顯影處理。The method for producing a cured film according to claim 20, wherein the developing treatment is a negative development treatment. 如申請專利範圍第20項或第21項所述之硬化膜的製造方法,其包含於前述顯影處理製程之後,於50~450℃的溫度下對經顯影之感光性樹脂組成物層進行加熱之製程。The method for producing a cured film according to claim 20, wherein after the developing treatment process, the developed photosensitive resin composition layer is heated at a temperature of 50 to 450 °C. Process. 如申請專利範圍第19項至第21項中任一項所述之硬化膜的製造方法,其中 前述硬化膜的膜厚係1~30μm。The method for producing a cured film according to any one of the preceding claims, wherein the cured film has a thickness of 1 to 30 μm. 一種積層體的製造方法,依據申請專利範圍第19項至第23項中任一項所述之硬化膜的製造方法,形成硬化膜之後,進而再次將前述感光性樹脂組成物層形成製程、前述曝光製程及前述顯影處理製程依次進行2~5次。In the method for producing a cured film according to any one of the items 19 to 23, after the cured film is formed, the photosensitive resin composition layer is further formed into a process, and the method is the same. The exposure process and the aforementioned development process are sequentially performed 2 to 5 times. 一種半導體裝置,其具有申請專利範圍第16項所述之硬化膜或申請專利範圍第17項或第18項所述之積層體。A semiconductor device comprising the cured film of claim 16 or the laminate according to claim 17 or claim 18.
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