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TW201835229A - 抗蝕劑製程用膜形成材料、圖案形成方法及聚矽氧烷 - Google Patents

抗蝕劑製程用膜形成材料、圖案形成方法及聚矽氧烷 Download PDF

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Publication number
TW201835229A
TW201835229A TW107105924A TW107105924A TW201835229A TW 201835229 A TW201835229 A TW 201835229A TW 107105924 A TW107105924 A TW 107105924A TW 107105924 A TW107105924 A TW 107105924A TW 201835229 A TW201835229 A TW 201835229A
Authority
TW
Taiwan
Prior art keywords
film
group
silicon
formula
forming material
Prior art date
Application number
TW107105924A
Other languages
English (en)
Chinese (zh)
Inventor
瀬古智昭
大坪裕介
石川真義
田中博允
Original Assignee
日商Jsr股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Jsr股份有限公司 filed Critical 日商Jsr股份有限公司
Publication of TW201835229A publication Critical patent/TW201835229A/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW107105924A 2017-02-24 2018-02-22 抗蝕劑製程用膜形成材料、圖案形成方法及聚矽氧烷 TW201835229A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-034173 2017-02-24
JP2017034173 2017-02-24

Publications (1)

Publication Number Publication Date
TW201835229A true TW201835229A (zh) 2018-10-01

Family

ID=63252731

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107105924A TW201835229A (zh) 2017-02-24 2018-02-22 抗蝕劑製程用膜形成材料、圖案形成方法及聚矽氧烷

Country Status (3)

Country Link
JP (1) JPWO2018155377A1 (fr)
TW (1) TW201835229A (fr)
WO (1) WO2018155377A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI874433B (zh) * 2019-08-09 2025-03-01 德商默克專利有限公司 製造低介電常數矽質膜的組成物及使用其製造固化膜及電子裝置的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118541645A (zh) * 2022-01-12 2024-08-23 日产化学株式会社 含硅抗蚀剂下层膜形成用组合物及含硅抗蚀剂下层膜

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6511927B2 (ja) * 2014-06-05 2019-05-15 Jsr株式会社 シリコン含有膜形成用組成物、パターン形成方法及びポリシロキサン化合物
JP6250513B2 (ja) * 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ケイ素含有膜形成用組成物、基板、及びパターン形成方法
WO2016111210A1 (fr) * 2015-01-09 2016-07-14 Jsr株式会社 Composition pour former un film contenant du silicium et procédé de formation de motif utilisant ladite composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI874433B (zh) * 2019-08-09 2025-03-01 德商默克專利有限公司 製造低介電常數矽質膜的組成物及使用其製造固化膜及電子裝置的方法

Also Published As

Publication number Publication date
JPWO2018155377A1 (ja) 2020-01-16
WO2018155377A1 (fr) 2018-08-30

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