TW201825197A - Substrate processing method and substrate processing device - Google Patents

Abstract

This invention aims to transfer to next processing step at an appropriate contact angle with respect to a substrate having undergone a water repellent step. A substrate processing method according to an aspect of this invention comprises a liquid processing step, a water repellent step, a drying step and a contact angle adjustment step. In the liquid processing step, processing liquid containing water is supplied to the substrate. In the water repellent step, water repellent liquid is supplied to the substrate having undergone the liquid processing step. In the drying step, the substrate having undergone the water repellent step is dried. In the contact angle adjustment step, prior to a coating step in which coating liquid is supplied to the substrate having undergone the drying step for forming a film on the substrate, a contact angle with respect to the substrate having undergone the drying step is adjusted in accordance with the coating step.

Description

Substrate processing method and substrate processing device

The disclosed embodiments relate to a substrate processing method and a substrate processing apparatus.

Conventionally, in a semiconductor manufacturing process, a drying process is performed by removing a processing liquid supplied to a substrate and drying the substrate. In this drying process, the pattern formed on the substrate may be damaged due to the surface tension of the processing liquid.

For this reason, a technique is known in which a surface of a substrate is water-repellent by supplying a water-repellent liquid to the substrate before the drying process (for example, refer to Patent Document 1). Because the substrate surface is water-repellent, the contact angle of the substrate surface can be increased, so the force applied to the pattern can be reduced. Therefore, it is possible to suppress pattern damage. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Gazette No. 4455669

[Problems to be Solved by the Invention] The surface of the substrate after the drying process is water-repellent, and the contact angle is increased. In the semiconductor manufacturing process, there is a case where a coating process of forming a film on a substrate is performed, for example, by supplying a coating liquid to a water-repellent substrate. In the coating process, various coating liquids may be supplied. Depending on the coating liquid, it may be difficult to appropriately apply the coating liquid to the surface of the substrate having a higher contact angle.

The purpose of one aspect of the embodiment is to provide a substrate processing method and a substrate processing apparatus capable of performing a suitable contact angle to the next process on the substrate after being water-repellent. [Means for solving problems]

One embodiment of the substrate processing method includes a liquid processing process, a water repellent process, a drying process, and a contact angle adjustment process. The liquid processing process supplies a processing liquid containing moisture to a substrate. The water repellent process supplies the water repellent fluid to the substrate after the liquid processing process. The drying process dries the substrate after the water repellent process. The contact angle adjustment process adjusts the contact angle of the surface of the substrate after the drying process according to the coating process before the coating process in which a coating solution is supplied to the substrate after the drying process to form a film on the substrate. [Effect of the invention]

According to one aspect of the embodiment, the water-repellent substrate can be subjected to an appropriate contact angle to the next process.

[Mode for Carrying Out the Invention] Hereinafter, embodiments of the substrate processing method and the substrate processing apparatus disclosed in this case will be described in detail with reference to the attached drawings. In addition, this invention is not limited to the embodiment shown below.

First, the outline of the substrate processing method according to the first embodiment will be described with reference to FIG. 1. FIG. 1 is a diagram showing an outline of a substrate processing method according to the first embodiment.

As shown in FIG. 1, in the substrate processing method of the first embodiment, the substrate processing system 1 performs liquid processing (S1), water repellent processing (S2), rinse processing (S3), drying processing (S4), and After the contact angle adjustment process (S5), the coating and developing device 5 is subjected to a coating process (S6) and a developing process (S7). The coating and developing device 5 is a device that performs a part of a series of photolithography processes, and the coating process (S6) is a process of applying a photosensitive coating liquid to the surface of a substrate.

In the liquid processing (S1), for example, a cleaning process of supplying a chemical liquid to a substrate to clean the substrate, and a cleaning process of supplying a rinse liquid to the substrate after the cleaning process to wash away the chemical liquid remaining on the substrate are performed. The rinsing liquid is a treatment liquid containing water, for example, DIW (pure water).

In the water repellent treatment (S2), the surface of the substrate is water repelled by supplying a water repellent liquid to the substrate after the liquid treatment. By making the surface of the substrate water-repellent, the contact angle on the surface of the wafer W is increased, and the force applied to the pattern can be reduced. Therefore, it is possible to suppress occurrence of pattern damage when the substrate is dried.

In the rinsing process (S3), a rinsing liquid for washing away the water-repellent liquid remaining on the substrate surface is supplied. In the drying process (S4), the substrate is dried by removing the rinse liquid remaining on the substrate surface.

Here, the substrate after the drying process is conventionally subjected to a coating process (S6) and a development process (S7). However, the surface of the substrate after the drying treatment is water-repellent, and the contact angle is increased. In the coating process (S6), various coating liquids may be supplied, and depending on the type of the coating liquid, it may be difficult to appropriately apply the coating liquid to the surface of the substrate having an increased contact angle.

Therefore, in the substrate processing system 1 of the first embodiment, before the substrate after the drying process is carried out, a contact angle adjustment process is performed to adjust the contact angle of the substrate surface after the drying process in accordance with the content of the subsequent coating process (S5). .

By adjusting the contact angle of the surface of the substrate to an angle at which the coating liquid can be appropriately applied, the coating liquid can be appropriately applied to the surface of the substrate in a subsequent coating process. Therefore, according to the substrate processing system 1 of the first embodiment, the wafer W after being water-repellent can be moved to the next process at an appropriate contact angle (here, the coating process).

Next, a schematic configuration of the substrate processing system 1 according to the first embodiment will be described with reference to FIG. 2. FIG. 2 is a diagram showing a schematic configuration of a substrate processing system 1 according to the first embodiment. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are perpendicular to each other are defined, and the positive direction of the Z-axis is vertically upward.

As shown in FIG. 2, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is located adjacent to the processing station 3.

The loading / unloading station 2 includes a carrier mounting unit 11 and a transport unit 12. A plurality of carriers C that house a plurality of semiconductor wafers W (hereinafter referred to as wafers W) in a horizontal state are placed on the carrier mounting portion 11.

The transfer section 12 is provided adjacent to the carrier mounting section 11 and includes a substrate transfer device 13 and a transfer section 14 therein. The substrate transfer apparatus 13 includes a wafer holding mechanism that holds the wafer W. In addition, the substrate transfer device 13 can be moved in the horizontal direction and the vertical direction, and can be wound around a vertical axis. The wafer holding mechanism is used to transfer the wafer W between the carrier C and the transfer unit 14.

The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 15, a plurality of processing units 16, and a plurality of contact angle adjustment units 60. A plurality of processing units 16 and a contact angle adjustment section 60 are provided side by side on both sides of the conveyance section 15. In addition, the arrangement and number of the processing unit 16 and the contact angle adjustment unit 60 shown in FIG. 2 are examples, and are not limited to those illustrated.

The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. In addition, the substrate transfer device 17 can move horizontally and vertically, and can be wound around a vertical axis. Using a wafer holding mechanism, wafers W are transferred between the transfer unit 14, the processing unit 16, and the contact angle adjustment unit 60. Transport.

The processing unit 16 performs a predetermined substrate processing on the wafer W transferred by the substrate transfer device 17. Specifically, the processing unit 16 of the first embodiment performs the above-mentioned liquid treatment (S1), water repellent treatment (S2), rinse treatment (S3), and drying treatment (S4). A configuration example of the processing unit 16 will be described later.

The contact angle adjustment unit 60 performs the above-mentioned contact angle adjustment process (S5) on the wafer W subjected to the drying process (S4) by the processing unit 16. A configuration example of the contact angle adjustment section 60 will be described later.

The substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a memory unit 19.

The control unit 18 includes a microcomputer including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits. . The CPU of this microcomputer is executed by reading the program stored in ROM, and realizes the control described later.

In addition, this program may be a program recorded on a computer-readable recording medium, or may be a program installed in the storage unit 19 of the control device 4 from the recording medium. The recording media that can be read by a computer include, for example, a hard disk (HD), a flexible magnetic disk (FD), an optical disk (CD), a magneto-optical disk (MO), a memory card, and the like.

The memory unit 19 is implemented by, for example, a semiconductor memory element such as a RAM or a flash memory, or a memory device such as a hard disk or an optical disk.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placing section 11 and places the taken out wafer W on the substrate C.于 交 部 部 14。 In the transfer section 14. The wafer W placed on the transfer unit 14 is taken out from the transfer unit 14 by the substrate transfer device 17 of the processing station 3, and is carried into the processing unit 16.

After the wafer W carried into the processing unit 16 is subjected to liquid processing, water repellent processing, rinsing processing, and drying processing by the processing unit 16, it is carried out from the processing unit 16 by the substrate transfer device 17. The wafer W carried out from the processing unit 16 is carried into the contact angle adjustment unit 60 by the substrate transfer device 17, and the contact angle adjustment process is performed by the contact angle adjustment unit 60.

The wafer W processed by the contact angle adjustment unit 60 is carried out from the contact angle adjustment unit 60 by the substrate transfer device 17 and placed on the transfer unit 14. Then, the processed wafer W placed on the transfer unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

The wafer W returned to the carrier C is carried into the coating and developing device 5 (see FIG. 1), and the coating and developing device 5 performs the above-mentioned coating process (S6) and development process (S7). In addition, the coating and developing device 5 can be suitably applied to a well-known device such as the coating and developing device described in Japanese Patent Laid-Open Publication No. 2011-082352.

Next, a schematic configuration of the processing unit 16 will be described with reference to FIG. 3. FIG. 3 is a schematic plan view showing the structure of the processing unit 16.

As shown in FIG. 3, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.

The chamber 20 houses a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50. A FFU (Fan Filter Unit) 21 is provided on the top of the chamber 20. The FFU 21 forms a downflow in the chamber 20.

The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding unit 31 holds the wafer W horizontally. The pillar portion 32 is a member extending in the vertical direction, the base end portion is rotatably supported by the driving portion 33, and the holding portion 31 is horizontally supported at the front end portion. The driving portion 33 rotates the pillar portion 32 about a vertical axis. This substrate holding mechanism 30 rotates the support portion 32 by using the driving portion 33 and rotates the holding portion 31 supported by the support portion 32, thereby rotating the wafer W held by the holding portion 31.

The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70.

The recovery cup 50 is arranged so as to surround the holding portion 31, and the processing liquid scattered from the wafer W is collected by the rotation of the holding portion 31. A liquid discharge port 51 is formed at the bottom of the recovery cup 50, and the processing liquid captured by the recovery cup 50 is discharged from the liquid discharge port 51 to the outside of the processing unit 16. An exhaust port 52 is formed at the bottom of the recovery cup 50 to exhaust the gas supplied from the FFU 21 to the outside of the processing unit 16.

Next, an example of a specific configuration of the processing unit 16 will be described with reference to FIG. 4. FIG. 4 is a schematic diagram showing a configuration example of the processing unit 16.

As shown in FIG. 4, the FFU 21 is connected to a downflow gas supply source 23 through a valve 22. The FFU 21 discharges the downflow gas (for example, dry air) supplied from the downflow gas supply source 23 into the chamber 20.

The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 is provided at approximately the center of the chamber 20. A holding member 311 that holds the wafer W from the side is provided on the upper surface of the holding portion 31. The wafer W is thereby held horizontally in a state of being slightly spaced apart from the upper surface of the holding portion 31. In addition, the wafer W is held by the holding portion 31 in a state where the surface on which the pattern is formed faces upward.

The pillar portion 32 is a member extending in the vertical direction, and supports the holding portion 31 horizontally. The drive unit 33 is, for example, a motor, and can rotate the pillar portion 32 about a vertical axis.

This substrate holding mechanism 30 rotates the support portion 32 by using the driving portion 33 and rotates the holding portion 31 supported by the support portion 32, thereby rotating the wafer W held by the holding portion 31.

The processing fluid supply unit 40 supplies various processing liquids to the wafer W held by the substrate holding mechanism 30. The processing fluid supply unit 40 includes a plurality of (here, four) nozzles 41 a to 41 d, an arm 42 that supports the nozzles 41 a to 41 d horizontally, and a winding lifting mechanism 43 that rotates and lifts the arm 42.

The nozzle 41a is connected to a chemical liquid supply source 46a via a valve 44a and a flow regulator 45a. The nozzle 41b is connected to a DIW supply source 46b via a valve 44b and a flow regulator 45b. The nozzle 41c is connected to the IPA supply source 46c via a valve 44c and a flow regulator 45c. The nozzle 41d is connected to a water-repellent liquid supply source 46d via a valve 44d and a flow regulator 45d.

The chemical liquid supplied from the chemical liquid supply source 46a is discharged from the nozzle 41a. As the chemical liquid, for example, DHF (diluted hydrofluoric acid) or SC1 (a mixture of ammonia / hydrogen peroxide / water) can be used. The DIW (pure water) supplied from the DIW supply source 46b is discharged from the nozzle 41b. From the nozzle 41c, the IPA (isopropanol) supplied from the IPA supply source 46c is discharged. The water-repellent liquid supplied from the water-repellent liquid supply source 46d is discharged from the nozzle 41d.

Next, a configuration example of the contact angle adjustment unit 60 will be described with reference to FIG. 5. FIG. 5 is a diagram showing a configuration example of the contact angle adjustment section 60.

As shown in FIG. 5, the contact angle adjustment unit 60 includes a mounting table 61 for mounting the wafer W, a UV lamp 62 disposed above the mounting table 61, and a power controller 63 that controls the output of the UV lamp 62.

As described above, the contact angle adjustment unit 60 uses the UV lamp 62 to irradiate ultraviolet rays in the air to generate ozone gas, whereby the surface of the wafer W placed on the mounting table 61 is made hydrophilic by the ozone gas.

The control unit 18 of the control device 4 controls the irradiation amount of ultraviolet rays by controlling the power controller 63, thereby adjusting the contact angle of the surface of the wafer W to a predetermined angle set in advance. Control of the power controller 63 is performed based on control information 191 stored in the storage unit 19.

Here, the content of the control information 191 will be described with reference to FIG. 6. FIG. 6 is a diagram showing an example of the control information 191.

As shown in FIG. 6, the control information 191 is information related to each content of the coating process performed by the coating developing device 5 and the control mode of the contact angle adjustment unit 60. The control mode includes at least the power (mW / cm ² ) of ultraviolet rays irradiated from the UV lamp 62 and the irradiation time (sec) of ultraviolet rays. For example, in the example shown in FIG. 6, the coating process A is related to the power "X1" and the irradiation time "Y1", and the coating process B is related to the power "X2" and the irradiation time "Y2" .

When the control unit 18 selects, for example, "A coating process" by controlling the power controller 63, is irradiated from the UV lamp 62 X1 (mW / cm ²⁾ of the power ultraviolet Y1 (sec).

In this way, the contact angle adjustment unit 60 irradiates ultraviolet rays on the surface of the wafer W, and the control unit 18 adjusts the contact angle of the surface of the wafer W to an angle set in advance by controlling the irradiation amount of ultraviolet rays.

The “coating process” item of the control information 191 may also be the type of the coating liquid used in the coating process. That is, the control information 191 may be information related to the control mode of the contact angle adjustment unit 60 of various types of coating liquid. The types of coating liquid include, for example, resist, SOC (Spin On Carbon), SOG (Spin On Glass), BARC (Bottom Anti-Reflective Coating), TARC (Top Anti-Reflective Coating), SC (Immersion Top Coat), etc.

The selection of the "coating process" item of the control information 191 is performed by the input unit 80, for example. The input unit 80 may be provided in the substrate processing system 1 or a terminal device connected to the substrate processing system 1 through a network.

Further, in this case, the control unit 18 by controlling the power (mW / cm ²⁾ and both the irradiation time (sec), the exposure is adjusted, the control unit 18 may only control the power (mW / cm ²⁾ and irradiation time ( sec) any of them.

Next, specific operations of the processing unit 16 and the contact angle adjustment unit 60 will be described with reference to FIGS. 7, 8A, and 8B. FIG. 7 is a flowchart showing a processing procedure executed by the processing unit 16 and the contact angle adjustment unit 60. 8A is an explanatory diagram of a water repellent process, and FIG. 8B is an explanatory diagram of a contact angle adjusting process. The processes shown in FIG. 7 are executed under the control performed by the control unit 18.

As shown in FIG. 7, first, the substrate transfer device 17 (see FIG. 1) transfers the wafer W into the chamber 20 of the processing unit 16 (step S101). The wafer W is held on the holding member 311 with the pattern formation surface facing upward (see FIG. 4). After that, the control unit 18 controls the driving unit 33 to rotate the substrate holding mechanism 30 at a predetermined rotation speed.

Next, the processing unit 16 performs a chemical liquid processing (step S102). In the chemical liquid processing, first, the nozzle 41 a of the processing fluid supply unit 40 is positioned above the center of the wafer W. After that, when the valve 44a is opened for a predetermined time, a chemical liquid such as DHF is supplied to the surface of the wafer W. The chemical liquid supplied to the surface of the wafer W is extended to the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the surface of the wafer W is cleaned. Thereafter, the processing unit 16 performs a first flushing process (step S103). In the first flushing process, first, the nozzle 41b of the processing fluid supply unit 40 is located above the center of the wafer W, and the valve 44b is opened for a predetermined time to supply the DIW to the surface of the wafer W. The DIW supplied to the surface of the wafer W is extended to the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the chemical liquid remaining on the surface of the wafer W is washed away by DIW.

Next, the processing unit 16 performs a first replacement process (step S104). In the first replacement process, first, the nozzle 41 c of the processing fluid supply unit 40 is positioned above the center of the wafer W. After that, the valve 44c is opened for a predetermined time to supply the IPA to the surface of the wafer W. The IPA supplied to the surface of the wafer W is extended to the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the liquid on the surface of the wafer W is replaced with an IPA having affinity with the water-repellent liquid discharged to the wafer W in the subsequent water-repellent treatment. In addition, because IPA also has affinity with DIW, it is also easy to replace from DIW to IPA.

Then, the processing unit 16 performs a water repellent process (step S105). In the water repellent process, first, the nozzle 41 d of the processing fluid supply unit 40 is positioned above the center of the wafer W. After that, the valve 44d is opened for a predetermined time to supply the water-repellent liquid to the surface of the wafer W. The water-repellent liquid supplied to the surface of the wafer W is extended to the entire surface of the wafer W by the centrifugal force generated as the wafer W rotates (see FIG. 8A). Thereby, the silicon base is combined with the OH group on the surface of the wafer W, and a water-repellent film is formed on the surface of the wafer W.

By forming a water-repellent film on the surface of the wafer W, the contact angle on the surface of the wafer W increases from 0 degrees to α degrees. In addition, α degree is an angle greater than 90 degrees.

Next, the processing unit 16 performs a second replacement process (step S106). In the second replacement process, first, the nozzle 41 c of the processing fluid supply unit 40 is positioned above the center of the wafer W. After that, the valve 44c is opened for a predetermined time to supply the IPA to the surface of the wafer W. The IPA supplied to the surface of the wafer W is extended to the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the water repellent liquid remaining on the surface of the wafer W can be replaced by IPA.

Next, the processing unit 16 performs a second flushing process (step S107). In the second rinsing process, first, the nozzle 41b of the processing fluid supply unit 40 is positioned above the center of the wafer W, and the valve 44b is opened for a predetermined time to supply the DIW to the surface of the wafer W. The DIW supplied to the surface of the wafer W is extended to the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the water repellent liquid remaining on the surface of the wafer W is washed away with DIW.

Here, one example of the second rinse process is a process of supplying DIW to the surface of the wafer W, and the rinse liquid supplied to the wafer W in the second rinse process is not limited to DIW. For example, the second rinse process may be a process in which IPA is supplied to the surface of the wafer W. At this time, the second flushing process may be performed after the second replacement process, so that the nozzle 41c of the processing fluid supply unit 40 is positioned above the center of the wafer W, and the valve 44c is opened for a predetermined time, thereby supplying the IPA to the wafer W Just the surface.

Next, the processing unit 16 performs a drying process (step S108). In the drying process, by increasing the rotation speed of the wafer W for a predetermined time, the IPA remaining on the wafer W is thrown away to dry the wafer W. The wafer W after the drying process is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the mounting table 61 of the contact angle adjustment unit 60.

Then, the contact angle adjustment unit 60 performs a contact angle adjustment process (step S109). In the contact angle adjustment process, the surface of the wafer W placed on the mounting table 61 is irradiated with ultraviolet rays from a UV lamp 62.

The control unit 18 controls the power controller 63 of the contact angle adjustment unit 60 based on the control information 191 to control the irradiation amount of ultraviolet rays from the UV lamp 62. Thereby, the contact angle on the surface of the wafer W after the drying process is reduced from α degrees to β degrees (see FIG. 8B). In addition, β degree is an angle that is greater than 0 degrees and 90 degrees or less.

In this way, by adjusting the contact angle (β degree) of the wafer W after the drying process to an angle greater than 0 degrees and less than 90 degrees, and subsequent coating treatment by the coating and developing device 5, the coating liquid is not easy. Rejected. Therefore, in the coating process, the coating liquid can be appropriately applied to the surface of the wafer W.

For example, the coating process performed in the coating and developing device 5 is a process of applying a resist to the wafer W. When the resist is applied, it is appropriate that the contact angle of the surface of the wafer W is about 75 degrees in many cases. Therefore, in the substrate processing system 1, the contact angle of the surface of the wafer W is adjusted to 75 degrees by the contact angle adjustment processing using the contact angle adjustment unit 60.

Thereafter, the contact angle adjustment unit 60 performs a carry-out process (step S110). After the wafer W is stopped in the unloading process, the wafer W is unloaded from the contact angle adjustment unit 60 by the substrate transfer device 17 (see FIG. 1). When this unloading process is completed, a series of substrate processing for one wafer W is completed.

As described above, the substrate processing system 1 of the first embodiment includes a substrate holding mechanism 30 (an example of a rotating mechanism), a processing fluid supply unit 40 (an example of a processing liquid supply unit and a water-repellent liquid supply unit), and a contact angle adjustment unit. 60 、 与 控制 部 18。 60 and the control section 18. The substrate holding mechanism 30 rotates a wafer W (an example of a substrate). The processing fluid supply unit 40 supplies DIW (an example of a processing liquid containing water) to the wafer W. The processing fluid supply unit 40 supplies a water-repellent liquid to the wafer W. The contact angle adjustment unit 60 adjusts the contact angle on the surface of the wafer W. The control unit 18 controls the substrate holding mechanism 30, the processing fluid supply unit 40, and the contact angle adjustment unit 60 to perform a water repellent process for supplying the DIW to the wafer W and a water repellent fluid for the wafer W after the liquid process Chemical treatment, drying treatment for drying the wafer W after the water repellent treatment, and adjustment of the coating treatment according to the coating treatment before the coating treatment for supplying the coating liquid to the wafer W after the drying treatment and forming a film on the wafer W The contact angle adjustment process of the contact angle of the surface of the wafer W after the drying process.

Therefore, according to the substrate processing system 1 of the first embodiment, the wafer W after being water-repellent can be subjected to the next contact at an appropriate contact angle.

(Second Embodiment) In the first embodiment described above, the contact angle of the surface of the wafer W after the drying process is adjusted to be greater than 0 degrees and 90 degrees by controlling the irradiation amount of ultraviolet rays irradiated from the UV lamp 62. For the following predetermined angles, the contact angle adjustment processing is not limited to the above example. Therefore, in the second embodiment, another example of the contact angle adjustment processing will be described.

FIG. 9 is a diagram showing a schematic configuration of a substrate processing system according to a second embodiment. In addition, in the following description, the same reference numerals are assigned to the same parts as those already described, and redundant explanations are omitted.

As shown in FIG. 9, the substrate processing system 1A of the second embodiment includes a contact angle adjustment unit 60A. The contact angle adjustment unit 60A includes a UV irradiation unit 60A1 and an adhesion processing unit 60A2. Since the structure of the UV irradiation unit 60A1 is the same as that of the contact angle adjustment unit 60 of the first embodiment, the description is omitted here.

A configuration example of the adhesion processing unit 60A2 will be described with reference to FIG. 10. FIG. 10 is a schematic diagram showing a configuration example of the adhesion processing unit 60A2.

As shown in FIG. 10, the attachment processing unit 60A2 includes a mounting table 64 on which the wafer W is mounted, and a gas supply unit 65 disposed above the mounting table 64. In addition, the adhesion processing unit 60A2 includes a supply pipe 66 connected to the gas supply unit 65, a gas supply source 67 that supplies the adhesion gas to the gas supply unit 65 through the supply pipe 66, a valve 68 provided in the middle of the supply pipe 66, Flow adjustment unit 69.

The adhesion processing unit 60A2 is configured as described above, and the adhesion gas is supplied from the gas supply unit 65 to the wafer W placed on the mounting table 64. The adhesion gas is, for example, HMDS (hexamethyldisilazane) gas. By supplying this attached gas to the surface of the wafer W, the surface of the wafer W can be made hydrophobic.

The control unit 18A of the control device 4A controls the supply amount of the attached gas by at least one of the control valve 68 and the flow rate adjustment unit 69, thereby adjusting the contact angle of the wafer W to a predetermined angle. The control of the valve 68 and the flow rate adjustment unit 69 is performed based on the control information 192 stored in the memory unit 19A. The control information 192 is related to each content of the coating process (for example, the type of the coating liquid) performed by the coating and developing device 5 and the control mode such as the flow rate (ml / min) and supply time (sec) of the attached gas. Information.

Next, the content of the contact angle adjustment processing of the second embodiment will be described with reference to FIG. 11. FIG. 11 is an explanatory diagram of a contact angle adjustment process according to the second embodiment.

As shown in FIG. 11, in the contact angle adjustment process of the second embodiment, a UV irradiation process using a UV irradiation unit 60A1 and an adhesion process using an adhesion processing unit 60A2 are performed.

First, in the UV irradiation process, the surface of the wafer W placed on the mounting table 61 is irradiated with ultraviolet rays from a UV lamp 62.

The control unit 18 controls the power controller 63 of the UV irradiation unit 60A1 to control the irradiation amount of ultraviolet rays radiated from the UV lamp 62, thereby reducing the contact angle on the surface of the wafer W after the drying process from α degrees to 0 degrees (Or close to 0 degrees) (refer to the upper graph of FIG. 11). The wafer W after the UV irradiation treatment is carried out from the UV irradiation unit 60A1 by the substrate transfer device 17 (see FIG. 9), and is carried into the attachment processing unit 60A2.

Next, the adhesion processing unit 60A2 performs an adhesion process. In the attachment process, an adhesion gas is supplied from the gas supply unit 65 to the surface of the wafer W placed on the mounting table 64.

The control unit 18A controls the valve 68 and the flow rate adjustment unit 69 of the adhesion processing unit 60A2 to control the supply amount of the adhesion gas, thereby increasing the contact angle on the surface of the wafer W after the drying process from 0 degrees to β degrees (see (Figure 11 below). The β degree is an angle greater than 0 degrees and less than 90 degrees.

For example, when the coating process performed by the coating and developing device 5 is a process for applying a resist to the wafer W, the control unit 18A controls the valve 68 and the flow rate adjustment unit 69 according to the control information 192 to change the crystal The contact angle of the surface of the circle W was adjusted to 75 degrees.

In this way, in the contact angle adjustment process of the second embodiment, the contact angle of the surface of the wafer W is temporarily reduced to 0 degrees (or close to 0 degrees) by the UV irradiation process, and then the surface of the wafer W is contacted by the adhesion process. The angle is adjusted to an angle greater than 0 degrees and less than 90 degrees. Thereby, since the coating liquid is not easily rejected in the subsequent coating process, the coating liquid can be appropriately coated on the surface of the wafer W.

In addition, in the first embodiment and the second embodiment, when the coating liquid used in the coating process is a resist, the contact angle adjustment process is performed to adjust the contact angle on the surface of the wafer W to be greater than 0 degrees and at Angle below 90 degrees.

However, when a coating liquid other than a resist is used for the coating process, for example, when a coating liquid such as SOC or SOG is used, the contact angle adjustment unit 60 of the first embodiment or the UV of the second embodiment may be performed. The irradiation unit 60A1 performs a process of adjusting the contact angle of the surface of the wafer W to 0 degrees, that is, a process of removing a water-repellent film formed on the surface of the wafer W by a water-repellent process, as a contact angle adjustment process. Specifically, information having a correlation between the control mode corresponding to the SOC, SOG, or the like and the "removal of the water-repellent membrane" is stored in the memory unit 19 as the control information 191. Next, when the control unit 18 selects a coating liquid that is related to the "removal of the water-repellent film", it executes a process of making the contact angle of the surface of the wafer W after the drying process be 0 degrees as the contact angle adjustment process.

In addition, depending on the type of the coating liquid, the contact angle may be larger than 90 degrees. At this time, a process of maintaining the original state without any processing may be performed as the contact angle adjustment process. Specifically, information related to the control mode of the coating liquid whose contact angle is preferably greater than 90 degrees and "no processing" is stored in the memory unit 19 as control information 191. Next, when the control section 18 selects a coating liquid that is related to "no processing", the control section 18 executes and does not transfer the dried wafer W to the contact angle adjustment section 60 or the UV irradiation unit 60A1 and delivers it to the transfer section. The process of 14 (refer to FIG. 2) is a contact angle adjustment process.

Further, in the above-mentioned first and second embodiments, the means for reducing the contact angle of the surface of the wafer W and reducing the contact angle of the surface of the wafer W by using ozone generated by irradiation of ultraviolet rays are not limited. The above example. For example, by ashing or baking the wafer W after the drying process, the contact angle on the surface of the wafer W can also be reduced. In this case, the substrate processing system only needs to have a structure having an ashing unit or a baking unit as a contact angle adjusting section.

(Third Embodiment) The water-repellent liquid used for the water-repellent treatment can be obtained by mixing two treatment liquids (hereinafter referred to as the first liquid and the second liquid). Therefore, a configuration example of the water-repellent liquid supply source 46d according to the third embodiment will be described with reference to FIG. 12. FIG. 12 is a diagram showing a configuration example of the water-repellent liquid supply source 46d.

As shown in FIG. 12, the water-repellent liquid supply source 46 d includes a first tank 91 a, a second tank 91 b, a first supply pipe 92 a, a second supply pipe 92 b, and a mixing tank 93.

The first tank 91a stores a first liquid, and the second tank 91b stores a second liquid. The first supply pipe 92a is connected to the first tank 91a and the mixing tank 93, and the second supply pipe 92b is connected to the second tank 91b and the mixing tank 93. The mixing tank 93 stores the first liquid supplied from the first tank 91a through the first supply pipe 92a and the second liquid supplied from the second tank 91b through the second supply pipe 92b. The first liquid and the second liquid stored in the mixing tank 93 are mixed in the mixing tank 93 to form a water-repellent liquid.

The water-repellent liquid supply source 46d includes a third supply pipe 94, a first pump 95a, a second pump 95b, a fourth supply pipe 96, and a plurality of branch pipes 97.

The third supply pipe 94 connects the mixing tank 93 to the first pump 95a and the second pump 95b, respectively. The first pump 95a and the second pump 95b are, for example, telescopic pumps, suck the water-repellent liquid stored in the mixing tank 93 through the third supply pipe 94, and send them to the fourth supply pipe 96. The water-repellent liquid sent to the fourth supply pipe 96 is supplied to each processing unit 16 through a branch pipe 97.

The first pump 95a and the second pump 95b interact with each other without interrupting the supply of the water-repellent liquid to the fourth supply pipe 96. For example, while the water-repellent liquid is sent from the first pump 95a to the fourth supply pipe 96, the second pump 95b sucks the water-repellent liquid stored in the mixing tank 93. Next, when the first pump 95a finishes sending a predetermined amount of the water-repellent liquid, the water-repellent liquid is sent from the second pump 95b to the fourth supply pipe 96. During this period, the first pump 95a is sucked into and stored in the mixing tank. 93 of water repellent fluid.

After mixing the first liquid and the second liquid, the water-repellent ability of the surface of the wafer W will be lost after a certain period of time. Therefore, it is not suitable to store the water-repellent liquid in the mixing tank 93 for a long time. Therefore, the mixing tank 93 stores the water-repellent fluid in an amount equivalent to the amount that the first pump 95a or the second pump 95b can inhale (send out) in one operation. By doing so, it is possible to prevent the deterioration of the water repellent fluid.

In addition, compared with the method in which the first tank 91a and the second tank 91b are respectively connected to a pump, and the first liquid and the second liquid are separately supplied directly in front of the nozzle 41d, the method of mixing in the front of the nozzle 41d can be prevented. The first liquid and the second liquid are supplied to the wafer W in the state of the first liquid and the second liquid before the completion of the reaction between the first liquid and the second liquid (that is, before the generation of the water-repellent liquid). In addition, the number of pumps installed can be reduced.

In this way, according to the water-repellent liquid supply source 46d of the third embodiment, the first liquid and the second liquid can be sufficiently mixed, and the water-repellent liquid immediately after being mixed without losing the water-repellent ability can be supplied to the processing unit 16 .

(Fourth Embodiment) In the water-repellent treatment, the water-repellent fluid supplied to the central portion of the wafer W is deactivated until it reaches the outer peripheral portion of the wafer W. There may be a difference in the contact angle at the outer periphery. It is also considered that the water-repellent fluid before deactivation is supplied to the outer periphery of the wafer W by scanning the nozzle 41d, but the wafer W is not provided because the water-repellent fluid is no longer supplied to the central portion of the wafer W. The central portion of the wafer W may be dry or the contact angle of the central portion of the wafer W may not be sufficiently increased.

For this reason, in the fourth embodiment, a configuration example of a nozzle capable of uniformly hydrating the surface of the wafer W will be described with reference to FIGS. 13A to 13C. 13A is a diagram showing a configuration example of a nozzle of a first modification, FIG. 13B is a diagram showing a configuration example of a nozzle of a second modification, and FIG. 13C is a diagram showing a configuration example of a nozzle of a third modification.

As shown in FIG. 13A, the nozzle 47 of the first modification includes a first nozzle 47a and a second nozzle 47b. The first nozzle 47a and the second nozzle 47b are connected to an individual arm and a winding lifting mechanism.

In the water-repellent treatment of the first modification, for example, the first nozzle 47a is fixed above the center of the wafer W, and the water-repellent fluid is supplied from the first nozzle 47a to the rotating wafer W. In the water-repellent treatment of the first modification, the second nozzle 47b is swung within a predetermined range including the outer periphery of the wafer W, and the water-repellent fluid is supplied from the second nozzle 47b to the rotating crystal. Circle W.

According to the water-repellent treatment of the first modification, the water-repellent fluid before the deactivation is supplied to the outer periphery of the wafer W, so that the outer periphery of the wafer W can be sufficiently water-repellent to become the same as the central portion. In addition, according to the water-repellent treatment of the first modification, the water-repellent fluid is supplied from the first nozzle 47a to the central portion of the wafer W, so that the central portion of the wafer W can be prevented from drying or the central portion of the wafer W The contact angle did not rise sufficiently.

As shown in FIG. 13B, the nozzle 48 of the second modification is a rod-shaped nozzle (a so-called rod-shaped nozzle) having the same length as the radius of the wafer W. The spit outlet spit out the water-repellent liquid. According to this nozzle 48, the water repellent liquid can be simultaneously discharged to the central portion and the outer peripheral portion of the wafer W.

In the water-repellent treatment of the second modification, the water-repellent fluid is supplied from the nozzle 48 to the rotating wafer W. Thereby, the water-repellent fluid before the deactivation can be supplied to the central portion and the outer peripheral portion of the wafer W. Therefore, the surface of the wafer W can be uniformly water-repellent.

As shown in FIG. 13C, the nozzle 49 of the third modification is a disc-shaped nozzle having the same diameter as that of the wafer W, and the water-repellent liquid is discharged from a plurality of discharge ports formed below. According to this nozzle 49, the water repellent liquid can be simultaneously discharged onto the entire surface of the wafer W.

In the water-repellent treatment of the third modification, the water-repellent fluid is supplied from the nozzle 49 to the rotating wafer W. Thereby, the water-repellent fluid before the deactivation can be supplied to the entire surface of the wafer W. Therefore, the surface of the wafer W can be uniformly water-repellent.

Further effects and modification examples can be easily derived by the practitioner. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Therefore, various changes can be made without departing from the spirit or scope of the general inventive concept as defined by the scope of the appended patent applications and their equivalents.

C‧‧‧ Vehicle

S1‧‧‧Liquid Handling

S2‧‧‧ Water repellent treatment

S3‧‧‧Flushing

S4‧‧‧Drying

S5‧‧‧Contact angle adjustment

S6‧‧‧coating treatment

S7‧‧‧Development processing

S101‧‧‧step

S102‧‧‧step

S103‧‧‧step

S104‧‧‧step

S105‧‧‧step

S106‧‧‧step

S107‧‧‧step

S108‧‧‧step

S109‧‧‧step

S110‧‧‧step

W‧‧‧ Wafer

X‧‧‧axis

Y‧‧‧axis

Z‧‧‧axis

1‧‧‧ substrate processing system

1A‧‧‧Substrate Processing System

2‧‧‧ moved in and out

3‧‧‧processing station

4‧‧‧control device

4A‧‧‧Control device

5‧‧‧ Coating imaging device

11‧‧‧ Vehicle mounting section

12‧‧‧ Transport Department

13‧‧‧ substrate transfer device

14‧‧‧Transfer Department

15‧‧‧Transportation Department

16‧‧‧Processing unit

17‧‧‧ substrate transfer device

18‧‧‧Control Department

18A‧‧‧Control Department

19‧‧‧Memory Department

19A‧‧‧Memory Department

20‧‧‧ chamber

21‧‧‧FFU

22‧‧‧ Valve

23‧‧‧ Downstream gas supply source

30‧‧‧ substrate holding mechanism

31‧‧‧holding department

32‧‧‧ pillar

33‧‧‧Driver

40‧‧‧Processing fluid supply department

41a‧‧‧Nozzle

41b‧‧‧Nozzle

41c‧‧‧Nozzle

41d‧‧‧Nozzle

42‧‧‧ arm

43‧‧‧Swivel lifting mechanism

44a‧‧‧valve

44b‧‧‧ valve

44c‧‧‧ valve

44d‧‧‧valve

45a‧‧‧Flow Regulator

45b‧‧‧Flow Regulator

45c‧‧‧Flow Regulator

45d‧‧‧Flow Regulator

46a‧‧‧ chemical liquid supply source

46b‧‧‧DIW supply source

46c‧‧‧IPA Supply Source

46d‧‧‧ Water supply source

47‧‧‧ Nozzle

47a‧‧‧1st nozzle

47b‧‧‧Nozzle 2

48‧‧‧ Nozzle

49‧‧‧Nozzle

50‧‧‧Recycling Cup

51‧‧‧ drain port

52‧‧‧Exhaust port

60‧‧‧Contact angle adjustment section

60A‧‧‧Contact angle adjustment section

60A1‧‧‧UV irradiation unit

60A2‧‧‧ Attachment processing unit

61‧‧‧mounting table

62‧‧‧UV Light

63‧‧‧Power Controller

64‧‧‧mounting table

65‧‧‧Gas Supply Department

66‧‧‧Supply tube

67‧‧‧Gas supply source

68‧‧‧ valve

69‧‧‧Flow adjustment department

70‧‧‧ treatment fluid supply source

80‧‧‧ Input Department

91a‧‧‧Slot 1

91b‧‧‧Slot 2

92a‧‧‧The first supply pipe

92b‧‧‧ 2nd supply pipe

93‧‧‧ mixing tank

94‧‧‧ 3rd supply pipe

95a‧‧‧The first pump

95b‧‧‧Second pump

96‧‧‧ 4th supply tube

97‧‧‧ Branch

191‧‧‧Control Information

192‧‧‧Control Information

FIG. 1 is a diagram showing an outline of a substrate processing method according to the first embodiment. FIG. 2 is a diagram showing a schematic configuration of a substrate processing system according to the first embodiment. Fig. 3 is a schematic plan view showing the structure of a processing unit. FIG. 4 is a schematic diagram showing a configuration example of a processing unit. FIG. 5 is a diagram showing a configuration example of a contact angle adjustment unit. FIG. 6 is a diagram showing an example of control information. FIG. 7 is a flowchart showing a processing procedure executed by the processing unit and the contact angle adjusting section. Fig. 8A is an explanatory diagram of a water repellent treatment. 8B is an explanatory diagram of a contact angle adjustment process. FIG. 9 is a diagram showing a schematic configuration of a substrate processing system according to a second embodiment. FIG. 10 is a schematic diagram showing a configuration example of an attachment processing unit. FIG. 11 is an explanatory diagram of a contact angle adjustment process according to the second embodiment. FIG. 12 is a diagram showing a configuration example of a water-repellent liquid supply source. FIG. 13A is a diagram showing a configuration example of a nozzle according to a first modification. 13B is a diagram showing a configuration example of a nozzle according to a second modification. FIG. 13C is a diagram showing a configuration example of a nozzle according to a third modification.

Claims (14)

A substrate processing method includes: a liquid processing process that supplies a processing solution containing moisture to a substrate; a water repellent process that supplies a water repellent solution to the substrate after the liquid processing process; a drying process that causes the water repellent Drying the substrate after the hydration process; and a contact angle adjustment process, which adjusts the drying process according to the coating process before the coating process in which a coating liquid is supplied to the substrate after the drying process to form a film on the substrate The contact angle of the surface of the subsequent substrate. For example, the method for processing a substrate according to item 1 of the patent application scope, wherein the contact angle adjustment process adjusts the contact angle of the surface of the substrate after the drying process to an angle at which the coating solution can be appropriately applied. For example, the substrate processing method of the first or second scope of the patent application, wherein the contact angle adjustment process is performed from a process including not performing any processing on the substrate after the drying process, a process of adjusting to a preset contact angle, or One treatment selected from the options of removing at least two treatments among the treatments of the water-repellent film formed on the surface of the substrate in the water-repellent process. For example, the substrate processing method of claim 3 in the patent application scope, wherein the contact angle adjustment process selects one process from this option according to the type of coating liquid. For example, the method for processing a substrate according to any one of claims 1 to 4, wherein the contact angle adjustment process is to hydrophilize the surface of the substrate after the drying process, and then to the surface of the substrate that has been hydrophilized. The contact angle of the surface of the substrate is adjusted to a predetermined angle by supplying a hydrophobizing gas. For example, the substrate processing method according to any one of claims 1 to 4 of the patent application scope, wherein the contact angle adjustment process irradiates the surface of the substrate after the drying process with ultraviolet rays, and controls the amount of ultraviolet rays to dry the substrate. The contact angle of the surface of the substrate after the process is adjusted to a preset angle. For example, the method for processing a substrate according to any one of claims 1 to 6, wherein the coating process is a process of applying a photosensitive coating solution to the contact angle adjustment process in a series of photolithography processes. After the surface of the substrate. A substrate processing apparatus includes: a rotating mechanism for rotating a substrate; a processing liquid supply section for supplying a processing liquid containing moisture to the substrate; and a water-repellent liquid supply section for the substrate Supplying a water-repellent liquid; a contact angle adjusting section for adjusting the contact angle of the surface of the substrate; and a control section for controlling the rotation mechanism, the processing liquid supply section, the water-repellent liquid supply section and the contact The angle adjustment unit performs a liquid treatment for supplying the processing liquid to the substrate, a water repellent treatment for supplying the water repellent liquid to the substrate after the liquid treatment, a drying process for drying the substrate after the water repellent treatment, Prior to the coating process in which a coating solution is supplied to the substrate after the drying process to form a film on the substrate, a contact angle adjustment process is performed to adjust the contact angle of the surface of the substrate after the drying process in accordance with the coating process. For example, the substrate processing apparatus of the eighth aspect of the patent application, wherein the contact angle adjustment process adjusts the contact angle of the surface of the substrate after the drying process to an angle at which the coating solution can be appropriately applied. For example, if the substrate processing device of the scope of application for item 8 or item 9 is applied, the control section includes processing that does not perform any processing on the substrate after drying processing, processing that adjusts to a preset contact angle, or removes The water repellent process selects at least two processing options among the processes of the water repellent film formed on the surface of the substrate, and causes the contact angle adjustment section to execute the selected one process. For example, in the substrate processing apparatus for which the scope of the patent application is No. 10, the control section selects one process from this option according to the type of the coating liquid. For example, the substrate processing apparatus according to any one of claims 8 to 11, wherein the contact angle adjustment process makes the surface of the substrate after the drying treatment hydrophilic, and then provides hydrophobicity to the surface of the substrate that has been hydrophilicized. The gas is used to adjust the contact angle of the surface of the substrate to a predetermined angle. For example, the substrate processing apparatus according to any one of claims 8 to 11 in the scope of patent application, wherein the contact angle adjustment process is to irradiate the surface of the substrate after the drying process with ultraviolet rays, and to control the irradiation amount of ultraviolet rays, The contact angle of the surface of the substrate after the drying process is adjusted to a predetermined angle. For example, the substrate processing apparatus according to any one of the eighth to thirteenth patent applications, wherein the coating process is a process in which a photosensitive coating solution is applied to the contact angle adjustment process in a series of photolithography processes. After the surface treatment of the substrate.