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TW201815899A - Hardened material, wavelength conversion sheet, light emitting device, sealing element, and semiconductor light emitting device - Google Patents

Hardened material, wavelength conversion sheet, light emitting device, sealing element, and semiconductor light emitting device Download PDF

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TW201815899A
TW201815899A TW106130270A TW106130270A TW201815899A TW 201815899 A TW201815899 A TW 201815899A TW 106130270 A TW106130270 A TW 106130270A TW 106130270 A TW106130270 A TW 106130270A TW 201815899 A TW201815899 A TW 201815899A
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silicone resin
formula
hardened
wavelength conversion
condensation
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西田理彦
土居篤典
増井建太朗
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日商住友化學股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
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    • H01S5/0239Combinations of electrical or optical elements
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K3/00Materials not provided for elsewhere
    • C09K3/10Materials in mouldable or extrudable form for sealing or packing joints or covers
    • C09K3/1006Materials in mouldable or extrudable form for sealing or packing joints or covers characterised by the chemical nature of one of its constituents
    • C09K3/1018Macromolecular compounds having one or more carbon-to-silicon linkages
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
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  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
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Abstract

本發明係提供一種兼備高硬度與高破裂耐性與高耐熱性之硬化物。   本發明為一種硬化物,其係包含縮合型矽氧樹脂硬化物,滿足(1)及(2)。   (1)在縮合型矽氧樹脂硬化物之固體29 Si-核磁共振光譜,存在歸屬於T體之矽原子(與3個氧原子鍵結之矽原子)的峰值;   (2)不均勻域(Domain)大小(藉由將X光的波數定為橫軸,將從測定之測定散射強度減少對照散射之散射強度定為縱軸,將使縮合型矽氧樹脂硬化物含浸在四氫呋喃使其膨潤之試料的小角X光散射的測定值經繪圖之圖表,以式(A)進行擬合所得之值)為50Å以上。(式中,ξ表示網絡篩孔大小,Ξ表示不均勻域尺寸,I(q)表示散射強度,q表示波數,A及B表示擬合常數(Fitting constant))。The present invention provides a hardened material having both high hardness, high fracture resistance and high heat resistance. This invention is a hardened | cured material which contains a condensation type silicone resin hardened | cured material and satisfies (1) and (2). (1) In the solid 29 Si-NMR spectrum of the condensation type siloxane resin hardened substance, there are peaks of silicon atoms (silicon atoms bonded to 3 oxygen atoms) belonging to the T body; (2) Heterogeneous domain ( Domain) size (by setting the wave number of X-rays as the horizontal axis, and reducing the scattered intensity of the measured scattering intensity from the measured scattering intensity as the vertical axis, the condensed silicone resin hardened product is impregnated with tetrahydrofuran to make it swell The measured value of the small-angle X-ray scattering of the sample was plotted in a graph, and the value obtained by fitting the formula (A) was 50 Å or more. (In the formula, ξ represents the size of the network sieve, Ξ represents the size of the non-uniform domain, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constant.

Description

硬化物、波長轉換薄片、發光裝置、密封用元件及半導體發光裝置Hardened object, wavelength conversion sheet, light-emitting device, sealing element, and semiconductor light-emitting device

[0001] 本發明係關於硬化物、波長轉換薄片、發光裝置、密封用元件及半導體發光裝置。[0001] The present invention relates to a cured product, a wavelength conversion sheet, a light-emitting device, a sealing element, and a semiconductor light-emitting device.

[0002] 近年來,正研究使用半導體雷射(LD、Laser Diode)或發光二極體(LED、Light Emitting Diode)之發光裝置。   半導體雷射即使在高電流密度區域亦可維持高轉換效率。又,半導體雷射藉由使發光部與激發部分離,亦可使裝置之小型化。因此,正期待將半導體雷射使用在照明裝置。   發光二極體藉由最近之技術開發的進展,正進行高亮度化。   [0003] 作為發光裝置所使用之透明材料,已知有矽氧樹脂硬化物。例如於專利文獻1,記載有作為LED之螢光體薄片的基質材料,使用聚合性之矽氧樹脂的硬化物。矽氧樹脂硬化物不僅光透過性優異,而且耐熱性及UV耐性亦優異。因此,將矽氧樹脂硬化物作為形成材料之元件,由於即使是使用在長期間使用之發光裝置的情況,亦不易劣化故合適。 [先前技術文獻] [專利文獻]   [0004]   [專利文獻1] 日本特開2013-1792號公報[0002] In recent years, light emitting devices using a semiconductor laser (LD, Laser Diode) or a light emitting diode (LED, Light Emitting Diode) are being studied. Semiconductor lasers maintain high conversion efficiency even in high current density regions. In addition, the semiconductor laser can also reduce the size of the device by separating the light emitting portion from the excitation portion. Therefore, semiconductor lasers are expected to be used in lighting devices. With the recent advances in technology development, tritium light-emitting diodes are becoming brighter. [0003] As a transparent material used in a light-emitting device, a cured silicone resin is known. For example, Patent Document 1 describes that as a matrix material of a phosphor sheet of an LED, a cured product of a polymerizable silicone resin is used. The cured silicone resin is not only excellent in light transmittance, but also excellent in heat resistance and UV resistance. Therefore, it is suitable to use a cured silicone resin as a material for forming a material, since it is not easily deteriorated even when a light emitting device used for a long period of time is used. [Prior Art Document] [Patent Document] [0004] [Patent Document 1] Japanese Patent Laid-Open No. 2013-1792

[發明欲解決之課題]   [0005] 將高硬度之矽氧樹脂硬化物作為形成材料之元件有難以附傷痕的優點。另一方面,高硬度之矽氧樹脂硬化物由於硬化時容易產生破裂,有容易降低產率的缺點。又,高硬度之矽氧樹脂硬化物於使用時,有容易產生起因於熱應力等之破裂的缺點。因此,尋求係高硬度之矽氧樹脂硬化物,硬化時難以產生破裂,加熱時難以產生破裂之矽氧樹脂硬化物。   [0006] 在以下之說明,有時將「硬化時難以產生破裂之性質」稱為「破裂耐性」。又,有時將「加熱時難以產生破裂之性質」稱為「耐熱性」。   [0007] 在使用半導體雷射或UV-LED之發光裝置,有對元件照射高能量密度的光的情況。又,在使用高亮度之LED的發光裝置,因使用時之發熱,有元件曝露於高溫的情況。因此,此等之發光裝置所使用之元件中尋求高耐熱性。   [0008] 本發明係鑑於如此之事情而完成者,以提供一種兼備高硬度與高破裂耐性與高耐熱性之硬化物作為目的。又,以提供將該硬化物作為形成材料之波長轉換薄片、發光裝置、密封用元件及半導體發光裝置作為目的。 [用以解決課題之手段]   [0009] 為了解決上述之課題,本發明係提供以下之[1]~[13]。   [0010] [1] 一種硬化物,其係包含縮合型矽氧樹脂硬化物,滿足下述(1)及(2),   (1)在前述縮合型矽氧樹脂硬化物之固體29 Si-核磁共振光譜,存在歸屬於T體之矽原子的峰值;   (於此,所謂T體之矽原子,係意指與3個氧原子鍵結之矽原子)   (2)下述之不均勻域尺寸為50Å以上,   (於此,所謂不均勻域尺寸,係指   藉由將小角X光散射的測定所使用之X光的波數定為橫軸,將從以小角X光散射所測定之測定散射強度減少對照散射之散射強度定為縱軸,將使前述縮合型矽氧樹脂硬化物含浸在四氫呋喃使其膨潤之試料的小角X光散射的測定值進行繪圖所得之圖表,以下述式(A)進行擬合所得之值)(於此,ξ表示網絡篩孔大小,Ξ表示不均勻域尺寸,I(q)表示散射強度,q表示波數,,A及B表示擬合常數(Fitting constant))。   [2] 如[1]所記載之硬化物,其中,前述T體之矽原子相對於前述縮合型矽氧樹脂硬化物所包含之全矽原子的比例為50莫耳%以上。   [3] 如[2]所記載之硬化物,其中,T3矽原子相對於前述縮合型矽氧樹脂硬化物所包含之全矽原子的比例為50莫耳%以上,   (於此,所謂T3矽原子,係意指T體之矽原子當中,3個氧原子的全部與其他矽原子鍵結之矽原子)。   [4] 如[1]~[3]中任一項所記載之硬化物,其中,前述縮合型矽氧樹脂硬化物包含式(A1)、式(A1’)、式(A2)或式(A3)表示之構造單位,(式(A1)、式(A1’)、式(A2)及式(A3)中,   R1 表示碳數1~10之烷基或碳數6~10之芳基,   R2 表示碳數1~4之烷氧基或羥基,   複數個R1 及R2 可為分別相同亦可為相異)。   [5] 如[4]所記載之硬化物,其中,前述R1 為甲基,   前述R2 為碳數1~3之烷氧基或羥基,複數個R2 可為相同亦可為相異。   [6] 如[1]~[5]中任一項所記載之硬化物,其中,填料分散於前述縮合型矽氧樹脂硬化物中。   [7] 如[6]所記載之硬化物,其中,前述填料為波長轉換材料。   [8] 如[7]所記載之硬化物,其中,前述波長轉換材料為螢光體。   [9] 一種波長轉換薄片,其係將如[7]或[8]所記載之硬化物作為形成材料。   [10] 一種發光裝置,其係具有射出光之光源、與   配置在入射從前述光源射出之光的位置之如[9]所記載之波長轉換薄片。   [11] 一種密封用元件,其係將如[1]~[8]中任一項所記載之硬化物作為形成材料。   [12] 一種半導體發光裝置,其係具有基材、與   配置在前述基材之半導體發光元件、與   密封前述半導體發光元件之至少一部分之密封用元件,前述密封用元件為如[11]所記載之密封用元件。   [13] 如[12]所記載之半導體發光裝置,其中,前述半導體發光元件的發光波長為400nm以下。 [發明的效果]   [0011] 根據本發明,可提供一種兼備高硬度與高破裂耐性與高耐熱性之硬化物。又,可提供將該硬化物作為形成材料之波長轉換薄片、發光裝置、密封用元件及半導體發光裝置。[Problems to be Solved by the Invention] [0005] The use of a high-hardness silicone hardened material as a component forming material has an advantage that it is difficult to attach a flaw. On the other hand, high-hardness siloxane resin hardened products are prone to cracking during hardening, and have the disadvantage of being liable to reduce yield. In addition, a hardened silicone resin hardened product has a disadvantage that cracks due to thermal stress and the like are liable to occur during use. Therefore, a silicone hardened material having a high hardness is required, and it is difficult to cause cracking during hardening, and it is difficult to generate a hardened silicone resin when heated. [0006] In the following description, the “property to prevent cracking during hardening” may be referred to as “crack resistance”. In addition, "the property that cracks are hard to occur when heated" is sometimes called "heat resistance". [0007] In a light emitting device using a semiconductor laser or a UV-LED, the element may be irradiated with light having a high energy density. In addition, in a light-emitting device using a high-brightness LED, elements may be exposed to high temperatures due to heat generated during use. Therefore, high heat resistance is sought among the elements used in these light emitting devices. [0008] The present invention has been made in view of such circumstances, and an object thereof is to provide a hardened material having both high hardness, high fracture resistance, and high heat resistance. It is also an object of the present invention to provide a wavelength conversion sheet, a light-emitting device, a sealing element, and a semiconductor light-emitting device using the cured material as a forming material. [Means for Solving the Problems] [0009] In order to solve the problems described above, the present invention provides the following [1] to [13]. [1] A hardened material containing a condensation type silicone resin hardened material, which satisfies the following (1) and (2), (1) a solid 29 Si-NMR in the above condensation type silicone resin hardened material The resonance spectrum has a peak of the silicon atom belonging to the T body; (here, the so-called silicon atom of the T body means a silicon atom bonded to 3 oxygen atoms) (2) The size of the non-uniform domain described below is 50 ° or more (here, the size of the non-uniform domain refers to the horizontal axis of the X-ray wave used for the measurement of small-angle X-ray scattering, and the scattering intensity measured from the small-angle X-ray scattering The scattering intensity for reducing the control scattering is defined as the vertical axis, and the measured value of small-angle X-ray scattering of a sample in which the above-mentioned condensation-type silicone resin hardened material is impregnated with tetrahydrofuran is plotted, and the graph is obtained by the following formula (A) (Fitted value) (Here, ξ represents the size of the network sieve, Ξ represents the size of the non-uniform domain, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants.) [2] The hardened product according to [1], wherein a ratio of the silicon atom of the T body to the total silicon atom contained in the condensation-type silicone resin hardened material is 50 mol% or more. [3] The hardened product according to [2], wherein the ratio of the T3 silicon atom to the total silicon atoms contained in the condensation type silicone resin hardened material is 50 mol% or more (here, the so-called T3 silicon Atom means the silicon atom of T body, all 3 oxygen atoms are bonded to other silicon atoms). [4] The cured product according to any one of [1] to [3], wherein the condensation-type silicone resin cured product includes formula (A1), formula (A1 '), formula (A2), or formula ( A3) indicates the structural unit, (In formula (A1), formula (A1 '), formula (A2), and formula (A3), R 1 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and R 2 represents a carbon number 1 An alkoxy group or a hydroxyl group of ˜4, and a plurality of R 1 and R 2 may be the same as or different from each other). [5] The cured product according to [4], wherein the R 1 is a methyl group, the R 2 is an alkoxy group or a hydroxyl group having 1 to 3 carbon atoms, and the plurality of R 2 may be the same or different . [6] The cured product according to any one of [1] to [5], wherein the filler is dispersed in the condensation-type silicone resin cured product. [7] The cured product according to [6], wherein the filler is a wavelength conversion material. [8] The cured product according to [7], wherein the wavelength conversion material is a phosphor. [9] A wavelength conversion sheet using the hardened material according to [7] or [8] as a forming material. [10] A light-emitting device comprising a light source that emits light and a wavelength conversion sheet according to [9] that is disposed at a position where the light emitted from the light source is incident. [11] A sealing element using the hardened material according to any one of [1] to [8] as a forming material. [12] A semiconductor light-emitting device comprising a substrate, a semiconductor light-emitting element disposed on the substrate, and a sealing element that seals at least a portion of the semiconductor light-emitting element, wherein the sealing element is as described in [11] Sealing components. [13] The semiconductor light-emitting device according to [12], wherein the light-emitting wavelength of the semiconductor light-emitting element is 400 nm or less. [Effects of the Invention] [0011] According to the present invention, it is possible to provide a hardened material having both high hardness, high fracture resistance, and high heat resistance. In addition, a wavelength conversion sheet, a light-emitting device, a sealing element, and a semiconductor light-emitting device using the cured material as a forming material can be provided.

[0013] 以下,針對本發明之實施形態進行說明。   [0014] 矽氧樹脂所包含之構造單位,作為重複單位,較佳為包含在矽氧樹脂。   [0015] <硬化物>   本發明之硬化物,其係包含縮合型矽氧樹脂硬化物,滿足下述(1)及(2),   (1) 在前述縮合型矽氧樹脂硬化物之固體29 Si-核磁共振光譜,存在歸屬於T體之矽原子的峰值;   (於此,所謂T體之矽原子,係意指與3個氧原子鍵結之矽原子)   (2) 下述之不均勻域尺寸為50Å以上,   (於此,所謂不均勻域尺寸,係指   藉由將小角X光散射的測定所使用之X光的波數定為橫軸,將從以小角X光散射所測定之測定散射強度減少對照散射之散射強度定為縱軸,將使前述縮合型矽氧樹脂硬化物含浸在四氫呋喃使其膨潤之試料的小角X光散射的測定值進行繪圖所得之圖表,以下述式(A)進行擬合所得之值)。   [0016](於此,ξ表示網絡篩孔大小,Ξ表示不均勻域大,I(q)表示散射強度,q表示波數,A及B表示擬合常數)。   [0017] 於以下之說明,有將小角X光散射(small angle X-ray scattering)稱為SAXS的情況。   [0018] (縮合型矽氧樹脂硬化物)   本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料中,係使用縮合型矽氧樹脂。縮合型矽氧樹脂可1種單獨使用,亦可使用2種以上。   所謂縮合型矽氧樹脂,係藉由使與矽原子鍵結之羥基、與和其他矽原子鍵結之烷氧基或羥基進行脫醇反應或脫水反應而縮聚之樹脂。   [0019] 本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料之縮合型矽氧樹脂,係包含下述式(A3)表示之構造單位。又,縮合型矽氧樹脂較佳為進一步包含選自由式(A1)表示之構造單位、式(A1’)表示之構造單位及式(A2)表示之構造單位所構成之群組中之1種以上的構造單位,更佳為進一步包含式(A1)表示之構造單位、式(A1’)表示之構造單位及式(A2)表示之構造單位的全部。   [0020](式(A1)、式(A1’)、式(A2)及式(A3)中,   R1 表示碳數1~10之烷基或碳數6~10之芳基,   R2 表示碳數1~4之烷氧基或羥基,   複數個R1 及R2 可為分別相同亦可為相異)。   [0021] 於本說明書,將包含與3個氧原子鍵結之矽原子之構造單位稱為「T體」。   又,將包含該3個氧原子之全部與其他矽原子鍵結之矽原子之構造單位稱為「T3體」。   又,將包含該3個氧原子當中之2個氧原子與其他矽原子鍵結之矽原子之構造單位稱為「T2體」。   又,將包含該3個氧原子當中之1個氧原子與其他矽原子鍵結之矽原子之構造單位稱為「T1體」。   亦即,「T體」係意指「T1體」、「T2體」及「T3體」。   [0022] 於本說明書,將包含與2個氧原子鍵結之矽原子之構造單位稱為「D體」。將包含與1個氧原子鍵結之矽原子之構造單位稱為「M體」。   [0023] 式(A3)表示之構造單位包含有與其他矽原子鍵結之3個氧原子及與R1 鍵結之矽原子。由於R1 為碳數1~10之烷基或碳數6~10之芳基,故式(A3)表示之構造單位為T3體。   [0024] 式(A2)表示之構造單位包含有與其他矽原子鍵結之2個氧原子2個、與R1 及R2 鍵結之矽原子。由於R2 為碳數1~4之烷氧基或羥基,故式(A2)表示之構造單位為T2體。   [0025] 式(A1)表示之構造單位包含有與其他矽原子鍵結之1個氧原子、與R1 及2個R2 鍵結之矽原子。由於R1 為碳數1~10之烷基或碳數6~10之芳基,R2 為碳數1~4之烷氧基或羥基,故式(A1)表示之構造單位為T1體。   [0026] 式(A1’)表示之構造單位包含與R1 及2個R2 鍵結之矽原子,該矽原子係與氧原子鍵結,該氧原子係與其他構造單位中之矽原子鍵結。由於R1 為碳數1~10之烷基或碳數6~10之芳基,R2 為碳數1~4之烷氧基或羥基,故式(A1’)表示之構造單位為T1體。   [0027] 式(A1)表示之構造單位及式(A1’)表示之構造單位,構成縮合型矽氧樹脂硬化物所包含之有機聚矽氧烷鏈的末端。又,式(A3)表示之構造單位,構成縮合型矽氧樹脂硬化物所包含之有機聚矽氧烷鏈的分支鏈構造。亦即,式(A3)表示之構造單位形成有在縮合型矽氧樹脂硬化物的網絡構造或環構造之一部分。   [0028] 於本說明書,將T3體所包含之矽原子稱為「T3矽原子」。又,將T2體所包含之矽原子稱為「T2矽原子」。又,將T1體所包含之矽原子稱為「T1矽原子」。   [0029] 相對於縮合型矽氧樹脂之全構造單位的合計含量,T1體、T2體及T3體的合計含量較佳為50莫耳%以上。換句話說,相對於縮合型矽氧樹脂之全矽原子的合計含量,T1矽原子、T2矽原子及T3矽原子的合計含量較佳為50莫耳%以上。進而,相對於縮合型矽氧樹脂之全矽原子的合計含量,T1矽原子、T2矽原子及T3矽原子的合計含量,更佳為60莫耳%以上,再更佳為70莫耳%以上,又再更佳為80莫耳%以上,特別再更佳為90莫耳%以上。   [0030] 相對於縮合型矽氧樹脂之全構造單位的合計含量,D體的含量較佳為30莫耳%以下,更佳為20莫耳%以下,再更佳為10莫耳%以下,又再更佳為5莫耳%以下,特別再更佳為4莫耳%以下。   [0031] T1體、T2體及T3體的合計含量,可藉由以在固體29 Si-NMR測定所求得之全矽原子之信號(Signal)的合計面積,除以作為T1矽原子、T2矽原子及T3矽原子歸屬之信號的合計面積而求得。   [0032] 相對於縮合型矽氧樹脂之全構造單位的合計含量,T3體的含量較佳為50莫耳%以上。換句話說,相對於縮合型矽氧樹脂之全矽原子的合計含量,T3矽原子的含量較佳為50莫耳%以上。進而,相對於縮合型矽氧樹脂之全矽原子的合計含量,T3矽原子的含量更佳為60莫耳%以上,再更佳為70莫耳%以上。   [0033] T3矽原子的含量,可藉由以在固體29 Si-NMR測定所求得之全矽原子之信號的合計面積,除以作為T3矽原子歸屬之信號的面積而求得。尚,針對T3矽原子以外之矽原子的含量亦可同樣求得。   [0034] R1 表示之碳數1~10之烷基可為直鏈狀之烷基,亦可為分支鏈狀之烷基,亦可為具有環狀構造之烷基。此等當中,較佳為直鏈狀或分支鏈狀之烷基,更佳為直鏈狀之烷基。   [0035] R1 表示之碳數1~10之烷基,係構成該烷基之1個以上的氫原子可被其他官能基取代。作為烷基之取代基,例如可列舉苯基、萘基等之碳數6~10之芳基,較佳為苯基。   [0036] 作為R1 表示之碳數1~10之烷基,例如可列舉甲基、乙基、n-丙基、異丙基、n-丁基、異丁基、tert-丁基、n-戊基、新戊基、己基、辛基、壬基、癸基等之無取代之烷基、苯基甲基、苯基乙基、苯基丙基等之芳烷基。此等當中,較佳為甲基、乙基、n-丙基或n-丁基,更佳為甲基、乙基或異丙基,再更佳為甲基。   [0037] R1 表示之碳數6~10之芳基,係構成該芳基之1個以上的氫原子可被其他官能基取代。作為芳基之取代基,例如可列舉甲基、乙基、丙基、丁基等之碳數1~10之烷基。   [0038] 作為R1 表示之碳數6~10之芳基,例如可列舉苯基、萘基等之無取代之芳基、甲基苯基、乙基苯基、丙基苯基等之烷基芳基等。此等當中,較佳為苯基。   [0039] 作為R1 ,較佳為烷基,更佳為甲基、乙基或異丙基,再更佳為甲基。   [0040] R2 表示之碳數1~4之烷氧基可為直鏈狀之烷氧基,亦可為分支鏈狀之烷氧基,亦可為具有環狀構造之烷氧基。此等當中,較佳為直鏈狀或分支鏈狀之烷氧基,更佳為直鏈狀之烷氧基。   [0041] 作為R2 表示之碳數1~4之烷氧基,例如較佳為甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、異丁氧基或tert-丁氧基,更佳為甲氧基、乙氧基或異丙氧基。   [0042] 作為R2 ,較佳為甲氧基、乙氧基、異丙氧基或羥基。   [0043] 本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料之縮合型矽氧樹脂,可進一步包含下述式(C1)、式(C1’)、式(C2)、式(C3)或式(C4)表示之構造單位。   [0044](式(C1)、式(C1’)、式(C2)、式(C3)及式(C4)中,R7 表示碳數1~4之烷氧基或羥基,複數個R7 可為相同亦可為相異)。   [0045] 於本說明書,將包含與4個氧原子鍵結之矽原子之構造單位稱為「Q體」。   又,將包含該4個氧原子當中之1個氧原子與其他矽原子鍵結之矽原子之構造單位稱為「Q1體」。式(C1)表示之構造單位及式(C1’)表示之構造單位為「Q1體」。   又,將包含該4個氧原子當中之2個氧原子與其他矽原子鍵結之矽原子之構造單位稱為「Q2體」。式(C2)表示之構造單位為「Q2體」。   又,將包含該4個氧原子當中之3個氧原子與其他矽原子鍵結之矽原子之構造單位稱為「Q3體」。式(C3)表示之構造單位為「Q3體」。   又,將包含該4個氧原子全部與其他矽原子鍵結之矽原子之構造單位稱為「Q4體」。式(C4)表示之構造單位為「Q4體」。   [0046] 亦即,Q體係意指Q1體、Q2體、Q3體及Q4體。   [0047] 本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的比重,較佳為1.20~1.35。縮合型矽氧樹脂硬化物的比重可藉由控制D體、T體及Q體之含有比率適當調整。   [0048] [不均勻域尺寸]   發明者們進行努力研究的結果,發現針對縮合型矽氧樹脂硬化物,進行小角X光散射之測定,從小角X光散射之測定值所算出之特定的參數,係與硬化物之破裂耐性及硬度(亦即,硬化物的力學物性)相關。亦即,發現特定之參數滿足特定之要件的硬化物係硬度及破裂耐性優異。又,發現特定之參數滿足特定之要件的硬化物,即使曝露於高溫後,亦保持強度及透明性(亦即,耐熱性優異)。   [0049] 具體而言,作為參數,下述之不均勻域尺寸為50Å以上之硬化物係硬度、破裂耐性及耐熱性優異。   [0050] 不均勻域尺寸係藉由將小角X光散射的測定所使用之X光的波數定為橫軸,將從以小角X光散射所測定之測定散射強度減少對照散射之散射強度定為縱軸,將使縮合型矽氧樹脂硬化物含浸在四氫呋喃使其膨潤之試料的小角X光散射的測定值進行繪圖所得之圖表,以下述式(A)進行擬合所得之值。   [0051](於此,ξ表示網絡篩孔大小,Ξ表示不均勻域尺寸,I(q)表示散射強度,q表示波數, A及B表示擬合常數)。   [0052] ξ表示之網絡篩孔大小,係關於在將使本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物含浸在四氫呋喃使其膨脹之試料,交聯點之T3矽原子間的距離之指標值。   [0053] A及B表示之擬合常數係以式(A)進行擬合時所使用之任意定數。   [0054] 式(A)係意指藉由Squared洛倫茲函數及奧恩斯坦-澤爾尼克(Ornstein-Zernike)函數進行曲線擬合。針對擬合參數,係以最小二乘法求得。   [0055] 擬合的範圍於q=0.022Å-1 ~0.13Å-1 的範圍進行。   擬合之初期值成為1Å<ξ<50Å、1Å<Ξ<250Å。   [0056] 小角X光散射的測定可使用搭載二次元檢出器之小角X光散射裝置進行。作為如此之裝置,例如可列舉NanoSTAR(裝置名、Bruker AXS股份有限公司製)。   [0057] 首先,使用冷凍粉碎機粉碎縮合型矽氧樹脂硬化物。作為冷凍粉碎機,例如可列舉日本興業股份有限公司製之JFC-300。將矽氧硬化物粉碎至平均粒徑成為100μm以下為止。   [0058] 其次,相對於所得之粉碎物10質量份,加入四氫呋喃90質量份,靜置24小時。將如此進行所得之膨潤樣品投入石英電池,進行小角X光解析。   [0059] X光,例如使用Cu靶之回轉對陰極型的X光產生器,於輸出50kV、100mA產生。而且將經產生之X光照射在膨潤樣品(試料)。   [0060] X光,例如通過由交叉偶合・戈貝爾鏡與3個針孔狹縫(狹縫的孔徑從X光產生器側為500μmφ、150μmφ、500μmφ)所構成之X光的光學系統,照射在膨潤樣品。而且,於膨潤樣品散射之X光係使用二次元檢出器(2次元Multi Wire檢出器、Hi-STAR)檢出。   [0061] 從膨潤樣品至檢知器為止的長度例如可成為106cm,直接光束阻擋器的大小例如可成為2mmφ。裝置內之真空度例如為40Pa以下。   [0062] 散射角2θ與直接光束位置的校正,例如使用山萮酸銀之1次(2θ=1.513°)與2次(2θ=3.027°)之個別的峰值進行。此情況下,可測定之散射角2θ的範圍為0.08~3°。   [0063] 將藉由檢出所得之二次元的散射像例如使用Bruker AXS公司製之解析軟體(SAXS Ver.4.1.29)解析,可得到小角X光小角散射光譜。所得之小角X光散射光譜係橫軸為X光的波數(單位:Å-1 ),縱軸為測定散射強度。   [0064] 又,即使針對使用未投入膨潤樣品之石英電池之對照散射的測定,亦可與上述同樣進行。   [0065] 使用個別的測定所得之測定值,將膨潤樣品之小角X光散射的測定所使用之X光的波數定為橫軸,將從以膨潤樣品之小角X光散射所測定之測定散射強度減少對照散射之散射強度定為縱軸,作成繪圖膨潤樣品之小角X光散射的測定值之圖表。針對所得之圖表,以上述式(A)進行擬合,而得到不均勻域尺寸Ξ。   [0066] 於小角X光散射,一般而言,來自粒子之形狀或交聯點之疏密的物質中之電子密度的對比反映在散射輪廓(Scattering profile)。針對交聯密度高之區域(例如T3矽原子密集之區域),於通常之小角X光散射,得不到藉由交聯點之電子密度差之散射。惟,藉由將硬化物以溶劑膨潤,由於擴散硬化物中之網絡構造,同時附上溶劑與硬化物的對比,故可得到來自硬化物中之交聯點的不均勻性之散射。   [0067] 發明者們研究的結果,發現上述之交聯點的不均勻性、與硬化物的力學物性相關。形成硬化物時,空間性均勻產生交聯反應時,得到交聯點均勻分布之硬化物。另一方面,形成硬化物時,由於分子的波動等,空間性不均勻產生交聯反應時,得到交聯點不均勻分布之硬化物。發明者們研究的結果,發現控制形成硬化物時之交聯反應,交聯點較預定之基準更不均勻分布之硬化物,硬度及破裂耐性優異。又,發現「交聯點之不均勻性」可藉由上述之不均勻域尺寸Ξ定量性評估。   [0068] 圖1係表示上述之聚合的狀態之示意圖,顯示矽氧樹脂所包含之T3矽原子的分布。在圖1,附顏色的濃淡表示T3矽原子的量。附顏色薄的點表示T3矽原子較少的區域,附顏色濃的點表示T3矽原子較多的區域。   [0069] 亦即,使縮合型矽氧樹脂硬化物以四氫呋喃膨潤之前(圖1(a)),即使有T3矽原子的疏密為不明確的情況,可強調藉由使縮合型矽氧樹脂硬化物以四氫呋喃膨潤,形成T3矽原子較少之區域(圖中,以符號A表示)、與T3矽原子較多之區域(圖中,以符號B表示)的「不均勻」的狀態(圖1(b))。   [0070] 於小角X光散射,根據區域A與區域B之電子密度的對比,而得到散射輪廓。由上述之不均勻域尺寸Ξ係對應在以圖1(b)示意性表示之區域A1與區域A2之間的中心間距離d的平均之距離。在圖1(b),將區域A1之中心以符號P1表示,將區域A2之中心以符號P2表示。   [0071] 區域之中心係位在各區域之重心位置。亦即,區域A1之中心即P1與區域A2之中心即P1,分別對應在區域A1與區域A2的重心。   [0072] 於硬化物中均勻分布T3矽原子時,由於即使於膨潤樣品中,T3矽原子亦均勻分布,故不均勻域尺寸Ξ縮小。亦即,係意指於不均勻域尺寸Ξ為小之硬化物,T3矽原子的分布為均勻。於硬化物中,T3矽原子較預定的基準更不均勻分布的情況下,即使於硬化物施加應力,亦可將應力分散於硬化物全體。因此,T3矽原子較預定之基準更不均勻分布之硬化物係具備高破裂耐性。發明者們進行研究的結果,瞭解到於不均勻域尺寸Ξ為50Å以上之硬化物,兼備高硬度、與高破裂耐性。認為T3矽原子於密集之區域保持強度,於T3矽原子於稀疏之區域緩和應力。   [0073] 本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物較佳為不均勻域尺寸Ξ為50Å以上600Å以下。   [0074] 不均勻域尺寸Ξ較佳為60Å以上,更佳為70Å以上,再更佳為80Å以上,特佳為90Å以上,特別再更佳為100Å以上,又特別再更佳為110Å以上,又特別再更佳為120Å以上,又再特別再更佳為130Å以上。   [0075] 又,不均勻域尺寸Ξ較佳為500Å以下,更佳為400Å以下,再更佳為300Å以下,特佳為200Å以下,特別再更佳為150Å以下。   [0076] 不均勻域尺寸Ξ滿足此範圍內之硬化物,由於滿足高硬度(以肖氏D硬度為70以上)、與高破裂耐性,適合於裝置應用時。   [0077] 於本說明書,將使用型D之硬度計(橡膠‧塑料硬度計)以1mm/秒之下降速度測定之硬度定為肖氏D硬度。   [0078] (不均勻域尺寸Ξ之控制方法)   針對不均勻域尺寸Ξ之控制方法進行說明。   本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物,較佳為藉由使摻合作為主劑之矽氧樹脂(以下稱為「矽氧樹脂A」)、與後述之寡聚物成分所得之縮合型矽氧樹脂,進行加熱硬化所得之硬化物。此時,可藉由調整原料之矽氧樹脂A及寡聚物成分的種類、摻合比率、或硬化時之硬化條件,來控制不均勻域尺寸Ξ。硬化時之硬化條件的調整於不均勻域尺寸Ξ的控制更有效果。   [0079] 矽氧樹脂A係多數包含形成網絡構造之交聯點(分支構造)的材料。寡聚物成分係具有T2體、D體構造等之直鏈構造,為較矽氧樹脂A交聯點更少之材料。   以下,針對矽氧樹脂A與寡聚物成分進行說明。   [0080] 《矽氧樹脂A》   矽氧樹脂A係包含上述式(A3)表示之構造單位。又,矽氧樹脂A較佳為進一步包含選自由上述式(A1)表示之構造單位、上述式(A1’)表示之構造單位及上述式(A2)表示之構造單位所構成之群組中之1種以上的構造單位。   [0081] 在矽氧樹脂A,相對於矽氧樹脂A之全構造單位的合計含量,T1體、T2體及T3體的合計含量通常為70莫耳%以上。   在矽氧樹脂A,相對於矽氧樹脂A之全構造單位的合計含量,T3體的含量通常為60莫耳%以上90莫耳%以下。   矽氧樹脂A之聚苯乙烯換算的重量平均分子量,通常為1500以上8000以下。   [0082] 在矽氧樹脂A,相對於矽氧樹脂A之全構造單位的合計含量,T1體、T2體及T3體的合計含量較佳為80莫耳%以上,更佳為90莫耳%以上,再更佳為95莫耳%以上。   [0083] 在矽氧樹脂A,相對於矽氧樹脂A之全構造單位的合計含量,T3體的含量較佳為65%以上90%以下,更佳為70%以上85%以下。   [0084] 矽氧樹脂A之聚苯乙烯換算的重量平均分子量較佳為1500以上7000以下,更佳為2000以上5000以下。   [0085] 作為矽氧樹脂A,可使用市售之矽氧樹脂。   [0086] 矽氧樹脂A較佳為具有矽醇基(Si-OH)。在矽氧樹脂A,相對於矽氧樹脂A所包含之全矽原子,具有矽醇基之矽原子較佳為1~30莫耳%,更佳為5~27莫耳%,再更佳為10~25莫耳%。在矽氧樹脂A,若具有矽醇基之矽原子的含量為上述的範圍內,由於於硬化的進行速度成為適當之範圍內,藉由以與後述之矽氧樹脂的硬化條件導致之構造控制組合,可有效果地控制硬化物的硬度、強度等之力學物性。   [0087] 又,在矽氧樹脂A,相對於矽氧樹脂A所包含之全矽原子,具有烷氧基之矽原子較佳為超過0莫耳%且為20莫耳%以下,更佳為超過0莫耳%且為10莫耳%以下,再更佳為1莫耳%以上10莫耳%以下。在矽氧樹脂A,若具有烷氧基之矽原子的含量為上述的範圍內,藉由將矽氧樹脂溶解在溶劑所得之矽氧樹脂組成物的流動性成為適當之範圍內,提昇該矽氧樹脂組成物的操作性。   [0088] 矽氧樹脂A,可將具有可產生矽氧烷鍵之官能基的有機矽化合物作為起始原料合成。於此,作為「可產生矽氧烷鍵之官能基」,可列舉鹵素原子、羥基、烷氧基。作為對應上述式(A3)表示之構造單位之有機矽化合物,例如可列舉有機三鹵矽烷、有機三烷氧基矽烷等。矽氧樹脂A,可藉由將起始原料之有機矽化合物,以對應各構造單位的存在比率之比率,於鹽酸等之酸或氫氧化鈉等之鹼的存在下,以水解縮合法使其進行反應來合成。可藉由適當選擇起始原料之有機矽化合物,調整矽氧樹脂A所包含之T3矽原子的存在比率。   [0089] 相對於縮合型矽氧樹脂所包含之全矽氧樹脂的合計含量,縮合型矽氧樹脂所包含之矽氧樹脂A的含量較佳為60質量%~100質量%,更佳為70~95質量%。   [0090] 《寡聚物成分》   縮合型矽氧樹脂包含矽氧樹脂A、與較矽氧樹脂AT3體的含量更少,且具有直鏈構造之寡聚物的情況下,產生聚合反應之容易引起的區域與聚合反應不易引起的區域。作為其結果,所得之硬化物具有「適當之不均勻性」。   [0091] [寡聚物B]   作為寡聚物成分,例如可列舉包含下述式(B1)、式(B1’)、式(B2)或式(B3)表示之構造單位之寡聚物。   [0092](式(B1)、式(B1’)、式(B2)及式(B3)中,   R3 表示碳數1~10之烷基或碳數6~10之芳基,   R4 表示碳數1~10之烷基、碳數6~10之芳基、碳數1~4之烷氧基或羥基,   複數個R3 及R4 可為分別相同亦可為相異)。   [0093] 包含式(B1)、式(B1’)、式(B2)或式(B3)表示之構造單位之寡聚物之聚苯乙烯換算的重量平均分子量,較佳為1000~10000,更佳為2000~8000,再更佳為3000~6000。   [0094] 在以下之說明,將包含式(B1)、式(B1’)、式(B2)或式(B3)表示之構造單位,聚苯乙烯換算的重量平均分子量為1000~10000之寡聚物成分稱為「寡聚物B」。   [0095] 寡聚物B較佳為(a)包含T2體之寡聚物或(b)包含D體之寡聚物,更佳為滿足(a)及(b)之寡聚物,亦即(c)包含T2體及D體之寡聚物。   [0096] (a)包含T2體之寡聚物   作為(a)包含T2體之寡聚物,其係式(B2)表示之構造單位,較佳為R4 為碳數1~4之烷氧基或羥基之構造單位的含量,亦即T2體的含量為30~60莫耳%者,更佳為40~55莫耳%者。   [0097] 寡聚物B為(a)包含T2體之寡聚物的情況下,若T2體的含量為上述的範圍內,縮合型矽氧樹脂,邊確保矽氧樹脂A與寡聚物B的溶解性,邊顯示熱硬化時良好之硬化反應性。   [0098] (b)包含D體之寡聚物   作為(b)包含D體之寡聚物,其係包含式(B1)、式(B1’)、式(B2)或式(B3)表示之構造單位之矽氧樹脂,以平均組成式為下述式(I)表示之矽氧樹脂較佳。(式中,   R5 表示碳數1~10之烷基或碳數6~10之芳基,   R6 表示碳數1~10之烷基、碳數6~10之芳基或氫原子,   n表示滿足1<n<2之實數,m表示滿足0<m<1之實數)。   [0099] 平均組成式為上述式(I)表示之寡聚物B係包含上述之T體及D體。   [0100] 在式(I),R5 較佳為甲基,R6 較佳為甲基或氫原子。較佳為n為滿足1<n≦1.5之實數,且m為滿足0.5≦m<1之實數,更佳為n為滿足1.1≦n≦1.4之實數,且m為滿足0.55≦m≦0.75之實數。若在式(I)之n及m為此等之範圍內,寡聚物B與矽氧樹脂A的相溶性變良好。   [0101] 寡聚物B所包含之全構造單位當中,其係式(B1)表示之構造單位及式(B1’)表示之構造單位,2個R4 當中之一者為碳數1~10之烷基或碳數6~10之芳基,另一者為碳數1~4之烷氧基或羥基之構造單位為「D1體」。   [0102] 寡聚物B所包含之全構造單位當中,其係式(B2)表示之構造單位,R4 為碳數1~10之烷基或碳數6~10之芳基之構造單位為「D2體」。   [0103] 寡聚物B為(b)含有D體之寡聚物的情況下,寡聚物B所包含之全構造單位當中,D1體及D2體的合計含量較佳為5~80莫耳%,更佳為10~70莫耳%,再更佳為15~50莫耳%。   [0104] (c)包含T2體及D體之寡聚物   (c)包含T2體及D體之寡聚物,係滿足(a)包含T2體之寡聚物、與(b)包含D體之寡聚物雙方之要件者。   [0105] 寡聚物B所包含之全構造單位當中,其係式(B1)表示之構造單位及式(B1’)表示之構造單位,2個R4 為碳數1~4之烷氧基或羥基之構造單位為T1體。   [0106] 寡聚物B所包含之全構造單位當中,其係式(B2)表示之構造單位,R4 為碳數1~4之烷氧基或羥基之構造單位為T2體。   [0107] 寡聚物B所包含之全構造單位當中,式(B3)表示之構造單位為T3體。   [0108] 寡聚物B為(c)包含T2體及D體之寡聚物的情況下,寡聚物B所包含之全構造單位當中,T1體、T2體及T3體的合計含量、與D體的含量之莫耳比(T體:D體),較佳為60:40~90:10。   [0109] 寡聚物B係對應構成矽氧樹脂之上述之各構造單位,可將具有可產生矽氧烷鍵之官能基之有機矽化合物作為起始原料合成。於此,作為「可產生矽氧烷鍵之官能基」,可列舉鹵素原子、羥基、烷氧基。   [0110] 作為對應上述式(B3)表示之構造單位之有機矽化合物,例如可列舉有機三鹵矽烷、有機三烷氧基矽烷等。作為對應上述式(B2)表示之構造單位之有機矽化合物,例如可列舉有機二鹵矽烷、有機二烷氧基矽烷等。   [0111] 寡聚物B可藉由將起始原料之有機矽化合物,以對應各構造單位的存在比率之比率,於鹽酸等之酸或氫氧化鈉等之鹼的存在下,以水解縮合法使其進行反應來合成。可藉由適當選擇起始原料之有機矽化合物,調整寡聚物B所包含之T體之矽原子與D體之矽原子的存在比率。   [0112] 相對於縮合型矽氧樹脂所包含之全矽氧樹脂的合計含量,縮合型矽氧樹脂所包含之寡聚物B的含量較佳為0.1~20質量%,更佳為0.2~15質量%,再更佳為0.5~10質量%。   [0113] 又,相對於縮合型矽氧樹脂所包含之矽氧樹脂A的含量,縮合型矽氧樹脂所包含之寡聚物B的含量較佳為0.1質量%~20質量%,更佳為1質量%~15質量%,再更佳為5質量%~12質量%。   [0114] 《寡聚物C》   作為其他寡聚物成分,例如可列舉其係包含上述式(A1)、上述式(A1’)、上述式(A2)或上述式(A3)表示之構造單位之矽氧樹脂,上述式(A3)表示之構造單位的含量相對於上述式(A1)、上述式(A1’)、上述式(A2)及上述式(A3)表示之構造單位的合計含量的比例為0~30莫耳%,聚苯乙烯換算的重量平均分子量未滿1500之矽氧樹脂。   在以下之說明,將如此之矽氧樹脂稱為「寡聚物C」。   [0115] 寡聚物C係T3矽原子的含量相對於T1矽原子、T2矽原子及T3矽原子的合計含量之比例為0~30莫耳%,聚苯乙烯換算的重量平均分子量未滿1500之矽氧樹脂。較佳為T3矽原子的含量相對於T1矽原子、T2矽原子及T3矽原子的合計含量之比例為0~25莫耳%。   [0116] 寡聚物C較佳為實質上未具有與氫原子鍵結之矽原子(氫矽烷基)及與烯基鍵結之矽原子。寡聚物C具有與烯基鍵結之矽原子或氫矽烷基時,有降低本實施形態之硬化物的耐熱性的傾向。   [0117] 寡聚物C較佳為具有下述式(2)表示之有機聚矽氧烷構造之寡聚物。   [0118](式(2)中,   R1 及R2 表示與前述相同意義,複數個R1 及R2 可為分別相同亦可為相異,   p2 、q2 、r2 、a2 及b2 表示成為[a2 ×q2 ]/[(p2 +b2 ×q2 ) +a2 ×q2 +(r2 +q2 )]=0~0.3之任意0以上之數)。   [0119] 在式(2)表示之有機聚矽氧烷構造,較佳為R1 為選自由甲基、乙基及苯基所構成之群組中之1種以上之基,R2 為選自由甲氧基、乙氧基、異丙氧基及羥基所構成之群組中之1種以上之基,更佳為R1 為選自由甲基及乙基所構成之群組中之1種以上之基,R2 為選自由甲氧基、乙氧基及異丙氧基所構成之群組中之1種以上之基。尤其是從本實施形態之硬化物的耐熱性的觀點來看,以R1 為甲基較佳。   [0120] 具有式(2)表示之有機聚矽氧烷構造之寡聚物C之各構造單位的存在比率,可用T1矽原子、T2矽原子及T3矽原子的存在比率表示。亦即,T1矽原子:T2矽原子:T3矽原子=[r2 +q2 ]:[p2 +b2 ×q2 ]:[a2 ×q2 ]。寡聚物C中之各矽原子的存在比率,可藉由適當調整p2 、q2 、r2 、a2 及b2 之數值來調整。例如,a2 與q2 之至少一者為0時,於寡聚物C中未存在T3矽原子,僅包含直鏈狀或環狀之分子。另一方面,r2 與q2 雙方為0時,於寡聚物C中僅存在T2矽原子,僅包含環狀之分子。   [0121] 在式(2)表示之有機聚矽氧烷構造,將T2矽原子之數定為x2 ,將T3矽原子之數定為y2 ,將T1矽原子之數定為z2 時,式(2)表示之有機聚矽氧烷構造中之T3矽原子的存在比率係以[y2 /(x2 +y2 +z2 )]表示。   [0122] [a2 ×q2 ]/[(p2 +b2 ×q2 )+a2 ×q2 +(r2 +q2 )]等同於式(2)表示之有機聚矽氧烷構造中之T3矽原子的存在比率:[y2 /(x2 +y2 +z2 )]。亦即,式(2)中之p2 、q2 、r2 、a2 及b2 ,係以T3矽原子的存在比率成為0~0.3的範圍內的方式適當調整。   [0123] 可包含本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料之縮合型矽氧樹脂之寡聚物C,其係具有式(2)表示之有機聚矽氧烷構造之矽氧樹脂,較佳為T3矽原子的含量相對於T1矽原子、T2矽原子及T3矽原子的合計含量之比例:[y2 /(x2 +y2 +z2 )]為0~0.3,且聚苯乙烯換算的重量平均分子量為未滿1500之寡聚物。若T3矽原子的存在比率為此範圍內,T2矽原子的存在比:[x2 /(x2 +y2 +z2 )]及T1矽原子的存在比:[z2 /(x2 +y2 +z2 )]並未特別限定。作為寡聚物C,較佳為[y2 /(x2 +y2 +z2 )]為0~0.25的範圍內者,更佳為0.05~0.2的範圍內者。   [0124] 寡聚物C由於T3矽原子的存在比率比較低,分支鏈構造少,多數包含直鏈狀或環狀之分子。作為寡聚物C,雖可為僅包含環狀分子者,但較佳為多數包含直鏈狀之分子者。作為寡聚物C,例如較佳為T1矽原子的存在比率:[z2 /(x2 +y2 +z2 )]為0~0.80之範圍內者,更佳為0.30~0.80之範圍內者,再更佳為0.35~0.75的範圍內者,特佳為0.35~0.55的範圍內者。   [0125] 相對於縮合型矽氧樹脂所包含之全矽氧樹脂的合計含量,縮合型矽氧樹脂所包含之寡聚物C的含量較佳為0.1質量%~20質量%,更佳為0.2質量%~15質量%,再更佳為0.5質量%~10質量%。   [0126] 又,相對於縮合型矽氧樹脂所包含之矽氧樹脂A的含量,縮合型矽氧樹脂所包含之寡聚物C的含量較佳為0.1質量%~20質量%,更佳為0.3質量%~10質量%,再更佳為0.5質量%~5質量%。   [0127] 寡聚物C之聚苯乙烯換算的重量平均分子量為未滿1500。寡聚物C之聚苯乙烯換算的重量平均分子量過大時,有本實施形態之硬化物的耐破裂性不夠充分的情況。以GPC測定之寡聚物C之聚苯乙烯換算的重量平均分子量可為未滿1000。   [0128] 寡聚物C之1分子中之T1矽原子、T2矽原子及T3矽原子之數,係具有式(2)表示之有機聚矽氧烷構造之樹脂,以成為所期望之分子量的方式適當調整。在一實施形態,寡聚物C1分子中之T1矽原子之數與T2矽原子之數與T3矽原子之數的和,較佳為2以上。   [0129] 寡聚物C對應構成寡聚物C之上述之各構造單位,可將具有可產生矽氧烷鍵之官能基之有機矽化合物作為起始原料來合成。於此,「可產生矽氧烷鍵之官能基」係表示與上述者相同意義。作為對應上述式(A3)表示之構造單位之有機矽化合物,例如可列舉有機三鹵矽烷、有機三烷氧基矽烷等。寡聚物C可藉由將如此之起始原料之有機矽化合物以對應各構造單位的存在比率之比率,以水解縮合法使其反應來合成。   [0130] 於寡聚物C的合成時,作為起始原料,成為混合對應上述式(A1)表示之構造單位之有機矽化合物、與對應上述式(A1’)表示之構造單位之有機矽化合物。此等之有機矽化合物,係有機矽化合物進行水解縮合反應而聚合時,與聚合反應之末端鍵結而使聚合反應停止。   [0131] 本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料之縮合型矽氧樹脂,較佳為包含矽氧樹脂A、與寡聚物成分。作為寡聚物成分,較佳為寡聚物B或寡聚物C。本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料之縮合型矽氧樹脂,較佳為包含矽氧樹脂A、與寡聚物B,更佳為包含矽氧樹脂A、與寡聚物B、與寡聚物C。   [0132] 作為其他寡聚物成分,例如可列舉包含上述式(A1)表示之構造單位及上述式(A2)表示之構造單位之矽氧樹脂。該矽氧樹脂可包含D體。   [0133] (溶劑)   本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料之縮合型矽氧樹脂,T3體的含量高。因此,以提昇操作性為目的,有添加溶劑於縮合型矽氧樹脂的情況。將包含縮合型矽氧樹脂與溶劑之組成物稱為「矽氧樹脂組成物」。   [0134] 溶劑只要能使矽氧樹脂溶解,則並未特別限定。作為溶劑,例如可使用沸點分別不同之2種以上的溶劑(以下,稱為溶劑P及溶劑Q)。   [0135] 作為溶劑P,較佳為沸點未滿100℃之有機溶劑。具體而言,較佳為丙酮、甲基乙基酮等之酮系溶劑;甲醇、乙醇、異丙基醇、正丙基醇等之醇系溶劑;己烷、環己烷、庚烷、苯等之烴系溶劑;乙酸甲酯、乙酸乙酯等之乙酸酯系溶劑;二乙基醚、四氫呋喃等之醚系溶劑。   [0136] 此等當中,作為溶劑P,更佳為甲醇、乙醇、異丙基醇、正丙基醇等之醇系溶劑。   [0137] 作為溶劑Q,較佳為沸點為100℃以上之有機溶劑。具體而言,較佳為甘醇醚溶劑、甘醇酯溶劑。   [0138] 作為甘醇醚溶劑之具體例,可列舉乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單異丙基醚、乙二醇單丁基醚、乙二醇單己基醚、乙二醇單乙基己基醚、乙二醇單苯基醚、乙二醇單苄基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單異丙基醚、二乙二醇單丁基醚、二乙二醇單己基醚、二乙二醇單乙基己基醚、二乙二醇單苯基醚、二乙二醇單苄基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單異丙基醚、丙二醇單丁基醚、丙二醇單己基醚、丙二醇單乙基己基醚、丙二醇單苯基醚、丙二醇單苄基醚、二丙二醇單甲基醚、二丙二醇單乙基醚、二丙二醇單異丙基醚、二丙二醇單丁基醚、二丙二醇單己基醚、二丙二醇單乙基己基醚、二丙二醇單苯基醚、二丙二醇單苄基醚。   [0139] 作為甘醇酯溶劑之具體例,可列舉乙二醇單乙基醚乙酸酯、乙二醇單異丙基醚乙酸酯、乙二醇單丁基醚乙酸酯、乙二醇單己基醚乙酸酯、乙二醇單乙基己基醚乙酸酯、乙二醇單苯基醚乙酸酯、乙二醇單苄基醚乙酸酯。   [0140] 此等當中,作為溶劑Q,更佳為乙二醇單丁基醚、二乙二醇單丁基醚、二丙二醇單甲基醚、乙二醇單丁基醚乙酸酯。   [0141] (矽氧樹脂組成物)   藉由混合本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物的原料之縮合型矽氧樹脂、與溶劑,而得到矽氧樹脂組成物。矽氧樹脂組成物可包含後述之硬化觸媒、填料、其他成分。   [0142] 矽氧樹脂組成物的黏度在25℃,通常為100~500000mPa・s,較佳為300~20000mPa・s,更佳為400~15000mPa・s,再更佳為500~10000mPa・s。若矽氧樹脂組成物的黏度為上述的範圍內,進一步包含波長轉換材料時,縮合型矽氧樹脂與波長轉換材料的混合性良好,且抑制波長轉換材料的沉澱。   [0143] 《矽氧樹脂組成物的製造方法》   矽氧樹脂A、寡聚物B及寡聚物C之混合方法並非被特別限制者,可使用混合2種類以上之高分子時所進行之公知之方法的任一種。例如,可將矽氧樹脂A、寡聚物B、寡聚物C及如有必要之其他成分的個別溶解於有機溶劑後,混合所得之溶液。   [0144] 由於可更均勻混合矽氧樹脂,且可提昇經調製之矽氧樹脂組成物的安定性,較佳為將矽氧樹脂溶解在揮發性及溶解性高之有機溶劑後,將該有機溶劑被其他溶劑取代。   [0145] 具體而言,首先,於揮發性及溶解性高之有機溶劑(例如上述之「溶劑P」)加入矽氧樹脂A之後,藉由加熱至溶劑P之沸點附近的溫度,並進行攪拌,而使矽氧樹脂A溶解於溶劑P。   其次,於所得之溶液加入寡聚物B、寡聚物C及如有必要之其他成分後,以與上述相同之方法,使寡聚物B、寡聚物C及如有必要之其他成分溶解在溶劑P。   其次,於所得之溶液加入較溶劑P揮發性更低之溶劑(例如上述之「溶劑Q」)後,藉由加熱蒸餾溶劑P之濃度至1%以下,可進行從溶劑P對溶劑Q的取代。為了有效率地進行溶劑取代,可將加熱蒸餾於減壓狀態下進行。   [0146] 藉由進行溶劑取代,可去除矽氧樹脂A、寡聚物B、寡聚物C及其他成分之個別所包含之殘存溶劑、水等。因此,藉由溶劑取代,可提昇矽氧樹脂組成物的安定性。   [0147] 藉由調整使縮合型矽氧樹脂硬化時之硬化條件,可控制硬化物之不均勻域尺寸Ξ。   [0148] 為了將硬化物之不均勻域尺寸Ξ成為50Å以上,較佳為將從80℃至125℃為止的昇溫速度定為4℃/分鐘以上,更佳為定為4.5℃/分鐘以上。藉由增大此溫度域的昇溫速度,由於活性化在縮合型矽氧樹脂之硬化初期的分子運動,縮合反應於各處所同時產生,增大交聯點為密集之區域之間的距離。從80℃至125℃為止的昇溫速度為1℃/分鐘以下時,於縮合型矽氧樹脂之硬化初期難以形成交聯點為密集之區域(域構造),不均勻域尺寸Ξ容易較50Å更小。   [0149] 又,藉由增大從80℃至125℃為止的昇溫速度,有使達到120℃以上之溫度時硬化中之縮合型矽氧樹脂為凝膠狀態,具有流動性的情況。於如此之狀態,由於更有效果地進行域之形成反應,早期形成較大之域。如此形成之較大的域,於後期之硬化反應進行固定化。   [0150] 從125℃至180℃為止的昇溫速度較佳為0.1℃~7℃/分鐘。藉由此溫度域的昇溫速度,可控制不均勻域尺寸。例如若昇溫速度為0.1℃/分鐘,由於容易產生形成交聯點更密集之區域的反應,故可將不均勻域尺寸定為100Å以上。又,例如若昇溫速度為5.5℃/分鐘,結束形成交聯點更密集之區域的反應之前,由於結束硬化反應,故可將不均勻域尺寸定為50Å以上未滿100Å。   [0151] 以150℃以上之溫度區域保持30分鐘以上較佳。藉由充分確保在此溫度區域保持之時間,更增大不均勻域尺寸,以不均勻域尺寸為大的狀態進行固定化。   不均勻域尺寸為大之硬化物,係能量上安定化之狀態,兼備高硬度、高破裂耐性及高耐熱性。   [0152] 又,為了控制硬化反應的速度,可將磷酸系觸媒、金屬系觸媒等之硬化促進劑添加在矽氧樹脂。   [0153] (硬化用觸媒)   作為硬化用觸媒,例如在上述式(A1)表示之構造單位、上述式(A1’)表示之構造單位及上述式(A2)表示之構造單位之為R2 烷氧基或羥基的情況下,為了促進水解縮合反應,可使用鹽酸、硫酸、硝酸、磷酸等之無機酸、蟻酸、乙酸、草酸、檸檬酸、丙酸、丁酸、乳酸、琥珀酸等之有機酸。   [0154] 作為硬化用觸媒,不僅酸性化合物亦可使用鹼性之化合物。具體而言,作為硬化用觸媒,可使用氫氧化銨、氫氧化四甲基銨、氫氧化四乙基銨等。   [0155] 作為硬化用觸媒,亦可使用有機金屬化合物觸媒。具體而言,作為硬化用觸媒,可使用含有鋁、鋯、錫、鈦或鋅之有機金屬化合物觸媒。   [0156] 作為含有鋁之有機金屬化合物觸媒,例如可列舉三乙醯乙酸酯鋁、三異丙醇(triisopropoxide)鋁。   [0157] 作為含有鋯之有機金屬化合物觸媒,例如可列舉四乙醯丙酮鋯(zirconium tetraacetylacetonate)、三丁氧基乙醯丙酮鋯、二丁氧基二乙醯丙酮鋯、四正丙氧鋯、四異丙氧鋯、四正丁氧鋯、醯化鋯(Zirconium acylate)、三丁氧基硬脂酸鋯。   [0158] 作為含有錫之有機金屬化合物觸媒,例如可列舉四丁基錫、三氯化單丁基錫、二氯化二丁基錫、氧化二丁基錫、四辛基錫、二氯化二辛基錫、氧化二辛基錫、四甲基錫、月桂酸二丁基錫、月桂酸二辛基錫、雙(2-乙基己酸酯)錫、雙(新癸酸酯)錫、二-n-丁基雙(乙基馬來酸己酯)錫、二-正丁基雙(2,4-戊二酮酸酯)錫、二-正丁基丁氧基氯錫、二-正丁基二乙醯氧錫、二-正丁基二月桂酸錫、二甲基二新癸酸酯錫。   [0159] 作為含有鈦之有機金屬化合物觸媒,例如可列舉四異丙醇鈦(Titanium tetraisopropoxide)、四正丁醇鈦、鈦酸丁酯二聚物、鈦酸四辛酯、乙醯丙酮鈦、乙醇酸辛酯(Octylene glycolate)鈦、乙醯乙酸乙酯鈦。   [0160] 作為含有鋅之有機金屬化合物觸媒,例如可列舉三乙醯丙酮鋅(Zinc triacetylacetonate)。   [0161] 此等當中,從所得之硬化物之透明性的觀點來看,較佳為磷酸酯或磷酸,更佳為磷酸。   [0162] 為了將硬化用觸媒以預定之濃度添加在矽氧樹脂,較佳為將硬化用觸媒稀釋在水、有機溶劑、矽氧系單體、烷氧基矽烷寡聚物等後,對矽氧樹脂進行添加。   [0163] 硬化用觸媒的含量,可考量矽氧樹脂之硬化反應的溫度、時間、觸媒的種類等適當調整。相對於縮合型矽氧樹脂100質量份,硬化用觸媒的含量較佳為0.01質量份以上10質量份以下,更佳為0.01質量份以上5質量份以下,特佳為0.1質量份以上1質量份以下。   [0164] 硬化用觸媒可對矽氧樹脂於事前添加,亦可於就要進行矽氧樹脂的硬化反應之前,對矽氧樹脂進行添加。   [0165] (填料)   本實施形態之硬化物可分散填料於縮合型矽氧樹脂硬化物中。作為填料,較佳為波長轉換材料。   [0166] 作為波長轉換材料,例如可列舉螢光體、量子點。作為螢光體,例如可列舉於波長570nm至700nm的範圍發出螢光之紅色螢光體、於490nm至570nm的範圍發出螢光之綠色螢光體、於420nm至480nm的範圍發出螢光之藍色螢光體等。   [0167] 《紅色螢光體》   作為紅色螢光體,例如可列舉由具有紅色破裂面之破裂粒子所構成之(Mg,Ca,Sr,Ba)2 Si5 N8 :以Eu表示之銪活化鹼土類氮化矽系螢光體;由具有幾乎球形狀作為規則性結晶成長形狀之成長粒子所構成之(Y,La,Gd,Lu)2 O2 S:以Eu表示之銪活化稀土類氧硫屬化物(Oxychalcogenide)系螢光體。   [0168] 作為其他紅色螢光體,其係含有:含有選自由Ti、Zr、Hf、Nb、Ta、W及Mo所構成之群組中之至少1種的元素之氧氮化物或氧硫化物或其雙方之螢光體,可列舉含有Al元素之一部分或全部被Ga元素取代之具有α氮化矽構造之氧氮化物的螢光體。   [0169] 作為其他紅色螢光體,可列舉(La,Y)2 O2 S:Eu等之Eu活化氧硫化物螢光體;Y(V,P)O4 :Eu、Y2 O3 :Eu等之Eu活化氧化物螢光體;(Ba,Sr,Ca,Mg)2 SiO4 :Eu,Mn、(Ba,Mg)2 SiO4 :Eu,Mn等之Eu,Mn活化矽酸鹽螢光體;(Ca,Sr)S:Eu等之Eu活化硫化物螢光體;YAlO3 :Eu等之Eu活化鋁酸鹽螢光體;LiY9 (SiO4 )6 O2 :Eu、Ca2 Y8 (SiO4 )6 O2 :Eu、(Sr,Ba,Ca)3 SiO5 :Eu、Sr2 BaSiO5 :Eu等之Eu活化矽酸鹽螢光體;(Y,Gd)3 Al5 O12 :Ce、(Tb,Gd)3 Al5 O12 :Ce等之Ce活化鋁酸鹽螢光體;(Ca,Sr,Ba)2 Si5 N8 :Eu、(Mg,Ca,Sr,Ba)SiN2 :Eu、(Mg,Ca,Sr,Ba)AlSiN3 :Eu等之Eu活化氮化物螢光體;(Mg,Ca,Sr,Ba)AlSiN3 :Ce等之Ce活化氮化物螢光體;(Sr,Ca,Ba,Mg)10 (PO4 )6 Cl2 :Eu,Mn等之Eu,Mn活化鹵代磷酸鹽螢光體;(Ba3 Mg)Si2 O8 :Eu,Mn、 (Ba,Sr,Ca,Mg)3 (Zn,Mg)Si2 O8 :Eu,Mn等之Eu,Mn活化矽酸鹽螢光體;3.5MgO・0.5MgF2 ・GeO2 :Mn等之Mn活化鍺酸鹽螢光體;Eu活化α氮化矽等之Eu活化氧氮化物螢光體;(Gd,Y,Lu,La)2 O3 :Eu,Bi等之Eu,Bi活化氧化物螢光體;(Gd,Y,Lu,La)2 O2 S:Eu,Bi等之Eu,Bi活化氧硫化物螢光體;(Gd,Y,Lu,La)VO4 :Eu,Bi等之Eu,Bi活化釩酸鹽螢光體;SrY2 S4 :Eu,Ce等之Eu,Ce活化硫化物螢光體;CaLa2 S4 :Ce等之Ce活化硫化物螢光體;(Ba,Sr,Ca)MgP2 O7 :Eu,Mn、(Sr,Ca,Ba,Mg,Zn)2 P2 O7 :Eu,Mn等之Eu,Mn活化磷酸鹽螢光體;(Y,Lu)2 WO6 :Eu,Mo等之Eu,Mo活化鎢酸鹽螢光體;(Ba,Sr,Ca)x Siy Nz :Eu,Ce(於此,x、y及z係表示1以上之整數)等之Eu,Ce活化氮化物螢光體;(Ca,Sr,Ba,Mg)10 (PO4 )6 (F,Cl,Br,OH):Eu,Mn等之Eu,Mn活化鹵代磷酸鹽螢光體; ((Y,Lu,Gd,Tb)1-x Scx Cey )2 (Ca,Mg)1-r (Mg,Zn)2+r Siz-q Geq O12+δ 等之Ce活化矽酸鹽螢光體。   [0170] 作為其他紅色螢光體,可列舉由將β-二酮基(Diketonate)、β-二酮、芳香族羧酸、布倫斯特酸(Bronsted acid)等之陰離子作為配位子之稀土類元素離子錯合物所構成之紅色有機螢光體、苝系顏料(例如二苯并{[f,f’]-4,4’,7,7’-四苯基}二茚并[1,2,3-cd:1’,2’,3’-lm]苝)、蒽醌系顏料、螯合系顏料、偶氮系顏料、喹吖酮(quinacridone)系顏料、蔥系顏料、異吲哚啉系顏料、異吲哚啉酮系顏料、酞菁系顏料、三苯基甲烷系鹼性染料、靛蒽醌(indanthrone)系顏料、靛酚系顏料、青藍系顏料、雙噁嗪系顏料。   [0171] 紅色螢光體當中,螢光發光之峰值波長為580nm以上,較佳為590nm以上,且螢光發光之峰值波長為620nm以下,較佳為610nm以下之紅色螢光體,可適合作為橙色螢光體使用。作為如此之橙色螢光體,例如可列舉(Sr,Ba)3 SiO5 :Eu、(Sr,Mg)3 PO4 )2 :Sn2+ 、SrCaAlSiN3 :Eu。   [0172] 《黃色螢光體》   作為黃色螢光體,例如可列舉氧化物系、氮化物系、氧氮化物系、硫化物系、氧硫化物系等之螢光體。具體而言,以RE3 M5 O12 :Ce(於此,RE表示選自由Y、Tb、Gd、Lu及Sm所構成之群組中之至少1種類的元素,M表示選自由Al、Ga及Sc所構成之群組中之至少1種類的元素)、M2 3 M3 2 M4 3 O12 :Ce(於此,M2 表示2價之金屬元素,M3 表示3價之金屬元素,M4 表示4價之金屬元素)等表示之具有石榴石構造之石榴石系螢光體;以AE2 M5 O4 :Eu(於此,AE表示選自由Ba、Sr、Ca、Mg及Zn所構成之群組中之至少1種類的元素,M5 表示選自由Si及Ge所構成之群組中之至少1種類的元素)等表示之正矽酸鹽系螢光體;將此等之螢光體的構成元素即氧原子的一部分被氮原子取代之氧氮化物系螢光體;以AEAlSiN3 :Ce(於此,AE表示選自由Ba、Sr、Ca、Mg及Zn所構成之群組中之至少1種類的元素)等之具有CaAlSiN3 構造之氮化物系螢光體等之Ce活化之螢光體。   [0173] 作為其他黃色螢光體,可列舉CaGa2 S4 :Eu(Ca,Sr)Ga2 S4 :Eu、(Ca,Sr)(Ga,Al)2 S4 :Eu等之硫化物系螢光體;以Cax (Si,Al)12 (O,N)16 :具有Eu等之SiAlON構造之氧氮化物系螢光體等之Eu活化之螢光體。   [0174] 《綠色螢光體》   作為綠色螢光體,例如可列舉由具有破裂面之破裂粒子所構成之(Mg,Ca,Sr,Ba)Si2 O2 N2 :以Eu表示之銪活化鹼土類氮氧化矽系螢光體;由具有破裂面之破裂粒子所構成之(Ba,Ca,Sr,Mg)2 SiO4 :以Eu表示之附活化鹼土類矽酸鹽系螢光體。   [0175] 作為其他綠色螢光體,可列舉Sr4 Al14 O25 :Eu、(Ba,Sr,Ca)Al2 O4 :Eu等之Eu活化鋁酸鹽螢光體;(Sr,Ba)Al2 Si2 O8 :Eu、(Ba,Mg)2 SiO4 : Eu、(Ba,Sr,Ca,Mg)2 SiO4 :Eu、(Ba,Sr,Ca)2 (Mg,Zn)Si2 O7 :Eu等之Eu活化矽酸鹽螢光體;Y2 SiO5 :Ce,Tb等之Ce,Tb活化矽酸鹽螢光體;Sr2 P2 O7 -Sr2 B2 O5 :Eu等之Eu活化硼酸磷酸鹽螢光體;Sr2 Si3 O8 -2SrCl2 :Eu等之Eu活化鹵矽酸鹽螢光體;Zn2 SiO4 :Mn等之Mn活化矽酸鹽螢光體;CeMgAl11 O19 :Tb、Y3 Al5 O12 :Tb等之Tb活化鋁酸鹽螢光體;Ca2 Y8 (SiO4 )6 O2 :Tb、La3 Ga5 SiO14 :Tb等之Tb活化矽酸鹽螢光體;(Sr,Ba,Ca)Ga2 S4 :Eu,Tb,Sm等之Eu,Tb,Sm活化硫代鎵酸鹽螢光體;Y3 (Al,Ga)5 O12 :Ce、(Y,Ga,Tb,La,Sm,Pr,Lu)3 (Al,Ga)5 O12 :Ce等之Ce活化鋁酸鹽螢光體;Ca3 Sc2 Si3 O12 :Ce、Ca3 (Sc,Mg,Na,Li)2 Si3 O12 :Ce等之Ce活化矽酸鹽螢光體;CaSc2 O4 :Ce等之Ce活化氧化物螢光體;SrSi2 O2 N2 :Eu、(Sr,Ba,Ca)Si2 O2 N2 :Eu、Eu活化β氮化矽、Eu活化α氮化矽等之Eu活化氧氮化物螢光體;BaMgAl10 O17 :Eu,Mn等之Eu,Mn活化鋁酸鹽螢光體;SrAl2 O4 :Eu等之Eu活化鋁酸鹽螢光體;(La,Gd,Y)2 O2 S:Tb等之Tb活化氧硫化物螢光體;LaPO4 :Ce,Tb等之Ce,Tb活化磷酸鹽螢光體;ZnS:Cu,Al、ZnS:Cu,Au,Al等之硫化物螢光體;(Y,Ga,Lu,Sc,La)BO3 :Ce,Tb、Na2 Gd2 B2 O7 :Ce,Tb、(Ba,Sr)2 (Ca,Mg,Zn)B2 O6 :K,Ce,Tb等之Ce,Tb活化硼酸鹽螢光體;Ca8 Mg(SiO4 )4 Cl2 :Eu,Mn等之Eu,Mn活化鹵矽酸鹽螢光體;(Sr,Ca,Ba)(Al,Ga,In)2 S4 :Eu等之Eu活化硫代鋁酸鹽(Thioaluminate)螢光體或硫代鎵酸鹽螢光體;(Ca,Sr)8 (Mg,Zn)(SiO4 )4 Cl2 :Eu,Mn等之Eu,Mn活化鹵矽酸鹽螢光體。   [0176] 作為其他綠色螢光體,可列舉吡啶-苯二甲醯亞胺縮合衍生物、苯并雜氧嗪酮系、喹唑啉酮系、香豆素系、喹啉黃系、萘二甲醯亞胺(naphthalic acid imide)系等之螢光色素;將水楊酸己酯作為配位子具有之鋱錯合物等之有機螢光體。   [0177] 《藍色螢光體》   作為藍色螢光體,可列舉由具有幾乎六角形狀作為規則性結晶成長形狀之成長粒子所構成之BaMgAl10 O17 :以Eu表示之銪活化鋇鎂鋁酸鹽系螢光體;由具有幾乎球形狀作為規則性結晶成長形狀之成長粒子所構成之(Ca,Sr,Ba)5 (PO4 )3 Cl:以Eu表示之銪活化鹵代磷酸鈣系螢光體;由具有幾乎立方體形狀作為規則性結晶成長形狀之成長粒子所構成之(Ca,Sr,Ba)2 B5 O9 Cl:以Eu表示之銪活化鹼土類氯硼酸鹽系螢光體;由具有破裂面之破裂粒子所構成之(Sr,Ca,Ba)Al2 O4 :Eu或(Sr,Ca,Ba)4 Al1 4O25 :以Eu表示之銪活化鹼土類鋁酸鹽系螢光體。   [0178] 作為其他藍色螢光體,可列舉Sr2 P2 O7 :Sn等之Sn活化磷酸鹽螢光體;Sr4 Al14 O25 :Eu、BaMgAl10 O17 :Eu、BaAl8 O13 :Eu等之Eu活化鋁酸鹽螢光體;SrGa2 S4 :Ce、CaGa2 S4 :Ce等之Ce活化硫代鎵酸鹽螢光體;(Ba,Sr,Ca)MgAl10 O17 :Eu、BaMgAl10 O17 :Eu,Tb,Sm等之Eu活化鋁酸鹽螢光體;(Ba,Sr,Ca)MgAl10 O17 :Eu,Mn等之Eu,Mn活化鋁酸鹽螢光體;(Sr,Ca,Ba,Mg)10 (PO4 )6 Cl2 :Eu、(Ba,Sr,Ca)5 (PO4 )3 (Cl,F,Br,OH):Eu,Mn,Sb等之Eu活化鹵代磷酸鹽螢光體;BaAl2 Si2 O8 :Eu、(Sr,Ba)3 MgSi2 O8 :Eu等之Eu活化矽酸鹽螢光體;Sr2 P2 O7 :Eu等之Eu活化磷酸鹽螢光體;ZnS:Ag、ZnS:Ag、Al等之硫化物螢光體;Y2 SiO5 :Ce等之Ce活化矽酸鹽螢光體;CaWO4 等之鎢酸鹽螢光體;(Ba,Sr,Ca)BPO5 :Eu、Mn、(Sr,Ca)10 (PO4 )6 ・nB2 O3 :Eu、2SrO・0.84P2 O5 ・0.16B2 O3 :Eu等之Eu,Mn活化硼酸磷酸鹽螢光體;Sr2 Si3 O8 ・2SrCl2 :Eu等之Eu活化鹵矽酸鹽螢光體。   [0179] 作為其他藍色螢光體,可列舉萘二甲醯亞胺系化合物、苯并噁唑系化合物、苯乙烯基系化合物、香豆素系化合物、吡唑啉系化合物、三唑系化合物等之螢光色素;銩錯合物等之有機螢光體等。   [0180] 此等之螢光體可僅1種類單獨使用,亦可組合2種類以上使用。   [0181] 《量子點》   作為量子點,例如可列舉InAs系之量子點、CdE(E=S,Se,Te)系之量子點(CdSx Se1-x /ZnS等)。   [0182] 相對於縮合型矽氧樹脂硬化物與波長轉換材料的合計含量,波長轉換材料的含量通常為20質量%以上95質量%以下,較佳為40質量%以上95質量%以下,更佳為50質量%以上95質量%以下,再更佳為60質量%以上95質量%以下。   [0183] 又,本實施形態之硬化物可包含矽氧填料。作為矽氧填料,例如可列舉矽氧樹脂填料、矽氧橡膠填料。   [0184] (其他成分)   本實施形態之硬化物,除了縮合型矽氧樹脂硬化物及填料之外,可包含無機粒子、矽烷偶合劑等之添加劑。   [0185] (無機粒子)   無機粒子係於本實施形態之硬化物中,使光散射可有效果地激發波長轉換材料。又,在本實施形態之硬化物的製造階段,可抑制波長轉換材料於包含矽氧樹脂之組成物中沉澱。   [0186] 作為無機粒子,例如可列舉矽、鈦、氧化鋯、鋁、鐵、鋅等之氧化物、碳黑、鈦酸鋇、矽酸鈣、碳酸鈣,較佳為矽、鈦、氧化鋯、鋁等之氧化物。   [0187] 作為無機粒子之形狀,例如可列舉略球狀、板狀、柱狀、針狀、晶鬚狀、纖維狀,由於得到更均勻之組成物,故較佳為略球狀。   [0188] 本實施形態之硬化物所包含之無機粒子雖可為僅1種類,亦可為2種類以上,但較佳為粒徑不同之2種類以上的無機粒子。具體而言,本實施形態之硬化物更佳為包含一次粒子之平均粒徑為100nm以上500nm以下之無機粒子、與同樣一次粒子之平均粒徑為未滿100nm之無機粒子。藉由包含一次粒子之平均粒徑不同之2種類以上的無機粒子,提昇因光之散射導致之波長轉換材料的激發效率,且抑制於包含矽氧樹脂之組成物中之波長轉換材料的沉澱。   [0189] 無機粒子之一次粒子的平均粒徑,例如可藉由由電子顯微鏡等直接觀察粒子之圖像成像法求得。   具體而言,首先,調製使成為測定對象之無機粒子分散在任意之溶劑之液,將所得之分散液滴下在載玻片等並使其乾燥。可製得直接散布無機粒子於接著膠帶的接著面,使無機粒子附著者。   其次,藉由由掃描型電子顯微鏡(SEM)或透過型電子顯微鏡(TEM)直接觀察粒子,從所得之形狀算出無機粒子的尺寸,求得無機粒子之一次粒子的平均粒徑。   [0190] 相對於縮合型矽氧樹脂硬化物100質量份,無機粒子的含量較佳為0.01質量份以上100質量份以下,更佳為0.1質量份以上50質量份以下。   [0191] (矽烷偶合劑)   作為矽烷偶合劑,例如較佳為具有選自由乙烯基、環氧基、苯乙烯基、甲基丙烯醯基、丙烯醯基、胺基、脲基、巰基、硫化物基及異氰酸酯基所構成之群組中之至少一種之基的矽烷偶合劑。此等當中,較佳為具有環氧基或巰基之偶合劑。   [0192] 作為矽烷偶合劑之具體例,可列舉2-(3,4-環氧基環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、3-巰基丙基三甲氧基矽烷。   [0193] 於包含矽氧樹脂之組成物包含矽烷偶合劑時,雖然矽烷偶合劑所包含之矽原子亦作為29 Si-NMR之信號檢出,但在本說明書,於包含矽氧樹脂之組成物之信號面積的計算時,成為亦包含矽烷偶合劑的信號者。   [0194] 相對於矽氧樹脂之合計含量100質量份,矽烷偶合劑的含量較佳為0.0001質量份以上1.0質量份以下,更佳為0.001質量份以上0.1質量份以下。   [0195] (其他添加劑)   本實施形態之硬化物可包含上述之材料以外之添加劑。作為上述之材料以外之添加劑,例如可列舉分散劑、整平劑、消泡劑。   [0196] (硬化物)   本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物,較佳為包含上述式(A3)表示之構造單位。又,縮合型矽氧樹脂硬化物更佳為進一步包含選自由上述式(A1)表示之構造單位、上述式(A1’)表示之構造單位及上述式(A2)表示之構造單位所構成之群組中之1種以上的構造單位。   [0197] 本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物可進一步包含上述式(C1)、上述式(C1’)、上述式(C2)、上述式(C3)或上述式(C4)表示之構造單位。   [0198] 在本實施形態之硬化物所包含之縮合型矽氧樹脂硬化物,相對於縮合型矽氧樹脂硬化物之全構造單位的合計含量,T3體的含量較佳為50莫耳%以上。換句話說,相對於縮合型矽氧樹脂硬化物之全矽原子的合計含量,T3矽原子的含量較佳為50莫耳%以上。進而,相對於縮合型矽氧樹脂硬化物之全矽原子的合計含量,T3矽原子的含量更佳為60莫耳%以上,再更佳為70莫耳%以上,又再更佳為75莫耳%以上。   [0199] 不均勻域尺寸為50Å以上之硬化物,施加應力的情況下,可使應力分散在硬化物全體。   另一方面,不均勻域尺寸較50Å更小之硬化物,T3矽原子之分布均勻。因此,施加應力的情況下,無法使應力分散在硬化物全體,破裂容易進入。   [0200] 不均勻域尺寸為50Å以上之硬化物,係兼備高硬度與高破裂耐性,例如即使於250℃持續加熱情況下,亦可使藉由加熱之應力分散在硬化物全體。   [0201] 根據本實施形態,可提供一種兼備高硬度、與高破裂耐性、與高耐熱性的硬化物。   [0202] <波長轉換薄片>   圖2係表示本實施形態之波長轉換薄片的示意圖。波長轉換薄片30係將包含縮合型矽氧樹脂硬化物40、與分散在縮合型矽氧樹脂硬化物40之波長轉換材料即填料50的硬化物作為形成材料。如此之波長轉換薄片30,係將上述之本實施形態的硬化物定為形成材料,成形成薄板狀者。   [0203] 波長轉換薄片30可於一側的面具備基材。作為基材,雖因波長轉換薄片的用途適當選擇即可,但例如可列舉鋁等之金屬基材;石英、藍寶石等之透明性基材。   [0204] 本實施形態之波長轉換薄片可適合使用在LED、太陽能電池、半導體雷射、光二極體、CCD、CMOS等之波長轉換薄片的用途。尤其是本實施形態之波長轉換薄片由於耐熱性優異,可適合使用在預想於高溫下的使用之半導體雷射的發光部。   [0205] 本實施形態之波長轉換薄片可包含上述之無機粒子。藉由含有無機粒子,於波長轉換薄片中,使光散射可更有效果地激發波長轉換材料。又,在波長轉換薄片之製造階段,可抑制波長轉換材料於包含矽氧樹脂之組成物中沉澱。   [0206] (膜厚)   波長轉換薄片的厚度(膜厚),由於可安定地製造波長轉換薄片,故較佳為10μm以上。又,波長轉換薄片的厚度,從提高波長轉換薄片之光學特性或耐熱性的觀點來看,較佳為1mm以下,更佳為500μm以下,再更佳為200μm以下。藉由波長轉換薄片的厚度為1mm以下,可減低因矽氧樹脂導致之光吸收或光散射。   [0207] 波長轉換薄片的膜厚,例如,可藉由將在波長轉換薄片之複數個點的膜厚使用千分尺進行測定,算出其平均值求得。所謂複數個點,例如可列舉波長轉換薄片的形狀為4角形的情況下,波長轉換薄片之中心部1個點、與波長轉換薄片之角落4個點的合計5個點。   [0208] 波長轉換薄片30可形成於支持基材上。作為支持基材,可使用將公知之金屬、薄膜、玻璃、陶瓷、紙等作為形成材料之基材。   [0209] 作為支持基材之形成材料的具體例,可列舉石英玻璃、硼矽酸玻璃、藍寶石等之透明的無機氧化物玻璃;鋁(亦包含鋁合金)、鋅、銅、鐵等之金屬板或箔;纖維素乙酸酯、聚對苯二甲酸乙二酯(PET)、聚乙烯、聚酯、聚醯胺、聚醯亞胺、聚苯硫醚、聚苯乙烯、聚丙烯、聚碳酸酯、聚乙烯縮醛、芳綸等之塑膠之薄膜;層合上述塑膠之紙;由上述塑膠塗佈之紙;層合或蒸鍍上述金屬之紙;層合或蒸鍍上述金屬之塑膠薄膜。此等當中,較佳為無機氧化物玻璃或金屬板。   [0210] 支持基材的厚度較佳為30μm以上,更佳為50μm以上。支持基材的厚度為30μm以上時,為了保護波長轉換薄片的形狀而具有充分之強度。又,支持基材的厚度從經濟性的觀點來看,較佳為5000μm以下,更佳為3000μm以下。   [0211] (波長轉換薄片的製造方法)   針對本實施形態之波長轉換薄片的製造方法進行說明。   [0212] 首先,調製使波長轉換材料分散在上述之矽氧樹脂組成物(縮合型矽氧樹脂+溶劑)之含有波長轉換材料之矽氧樹脂組成物。   [0213] 為了改善波長轉換材料的擴散或含有波長轉換材料之矽氧樹脂組成物的塗佈性,於含有波長轉換材料之矽氧樹脂組成物可包含無機粒子、接著輔助劑等之添加物。   [0214] 藉由將此等之成分以成為預定之組成的方式進行摻合後,使用公知之攪拌・混練機進行均質混合分散,可得到含有波長轉換材料之矽氧樹脂組成物。作為公知之攪拌・混練機,例如可列舉均質機、自公轉型攪拌機、3輥、球磨機、行星式球磨機、珠磨機。在混合分散後或混合分散的過程,如有必要可將含有波長轉換材料之矽氧樹脂組成物於真空或減壓條件下進行脫泡。   [0215] 其次,將所得之含有波長轉換材料之矽氧樹脂組成物塗佈在支持基材上。含有波長轉換材料之矽氧樹脂組成物的塗佈可使用公知之塗佈裝置進行。作為公知之塗佈裝置,例如可列舉反轉輥塗機、刮刀塗佈機、狹縫模塗機、直接凹版塗佈機、膠印凹版塗佈機、反轉輥塗機、刮刀塗佈機、吻塗機、自然輥塗機、氣刀塗佈機、輥式刮刀塗佈機、滾筒輥式塗佈機、雙流塗佈機、棒式塗佈機、繞線棒式塗佈機、塗抹器、浸塗機、簾式塗佈機、旋塗機、刀式塗佈機。此等當中,由於所得之成形體的膜厚容易變均勻,故較佳為狹縫模塗機或塗抹器。   [0216] 作為其他塗佈方法,可列舉絲網印刷、凹版印刷、平版印刷等之印刷法等。此等當中,從簡便性的觀點來看,較佳為絲網印刷。   [0217] 其次,使支持基材上所形成之塗佈膜加熱硬化而得到波長轉換薄片。塗佈膜的加熱係使用自然對流式烤箱、送風式烤箱、真空烤箱、惰性烘箱、熱板、熱壓機、紅外線加熱器等之機器進行。此等當中,從生產性的觀點來看,較佳為送風式烤箱。   [0218] 作為塗佈膜之加熱條件,例如可列舉於40℃~250℃加熱5分鐘~100小時之方法。加熱時間較佳為1~30小時,更佳為2~10小時,再更佳為3~8小時。藉由加熱時間為此範圍內,可充分去除溶劑,同時可防止加熱時之著色。   [0219] 藉由將含有波長轉換材料之矽氧樹脂組成物塗佈在支持基材上之後,放置在250℃以下之溫度的環境內,可使塗佈膜硬化,例如可藉由放置在40℃~200℃之溫度的環境內,使塗佈膜硬化。又,塗佈膜之硬化時,為了減低存在於含有波長轉換材料之矽氧樹脂組成物中之溶劑或水,且控制矽氧樹脂A與矽氧寡聚物之縮合反應速度,例如可以於40℃~60℃進行5分鐘~30分鐘,其次於60℃~100℃進行10分鐘~60分鐘,其次於140℃~200℃進行30分鐘~5小時的方式,階段性使塗佈膜硬化。   [0220] 針對塗佈膜的硬化條件,藉由將從80℃至125℃為止的昇溫速度定為4℃/分鐘以上,可增大形成波長轉換薄片之硬化物的不均勻域尺寸Ξ。   [0221] 又,藉由增大從80℃至125℃為止的昇溫速度,有使達到120℃以上之溫度時塗佈膜為凝膠狀態,具有流動性的情況。於如此之狀態,由於更有效果地進行域之形成反應,早期形成較大之域,故較佳。   [0222] 從125℃至180℃為止的昇溫速度較佳為0.1℃~7℃/分鐘。藉由此溫度域的昇溫速度,可控制形成波長轉換薄片之硬化物的不均勻域尺寸。例如若昇溫速度為0.1℃/分鐘,由於容易產生形成交聯點更密集之區域的反應,故可將形成波長轉換薄片之硬化物的不均勻域尺寸Ξ定為100Å以上。又,例如若昇溫速度為5.5℃/分鐘,結束形成交聯點更密集之區域的反應之前,由於結束硬化反應,故可將形成波長轉換薄片之硬化物的不均勻域尺寸Ξ定為50Å以上未滿100Å。   [0223] 以150℃以上之溫度區域保持30分鐘以上較佳。藉由充分確保在此溫度區域保持之時間,更增大形成波長轉換薄片之硬化物的不均勻域尺寸,以不均勻域尺寸為大的狀態進行固定化。   [0224] 本實施形態之波長轉換薄片,由於將本實施形態之硬化物作為形成材料,故兼備高硬度與高破裂耐性與高耐熱性,成為信賴性高者。   [0225] <發光裝置>   圖3表示本實施形態之發光裝置的示意圖。發光裝置100係具有上述之波長轉換薄片30、與光源60。   [0226] 作為光源60,可使用水銀燈、半導體發光元件等之公知的光源。本實施形態之發光裝置中,適合使用照射高亮度LED、半導體雷射等之高密度的能量之光源、發出UV-LED等之波長為400nm以下、300nm以下之高能量的紫外線之光源。光源60係具有基板70、與設置於基板70之一面的發光元件80。   [0227] 波長轉換薄片30配置在入射從光源60射出之光L1的位置。   [0228] 在如此之發光裝置100,從光源60射出之光L1入射在波長轉換薄片30。在波長轉換薄片30,波長轉換材料之填料50將光L1轉換成與光L1不同波長之轉換光L2。轉換光L2係從波長轉換薄片30射出。   [0229] 圖4表示具備本實施形態之波長轉換薄片之發光裝置的構造之斷面圖。   發光裝置1000係具有基板110、與半導體雷射元件(光源)120、與導光部130、與波長轉換薄片140、與反射鏡150。波長轉換薄片140可使用上述之構成者。   [0230] 半導體雷射元件120設定在基板110上。   [0231] 導光部130於內部入射從半導體雷射元件120射出之雷射光La,於內部導光雷射光La。於導光部130之一端光學性連接半導體雷射元件120,於另一端光學性連接波長轉換薄片140。導光部130係從一端側面向另一端側,呈現寬度逐漸降低之錘狀,成為從半導體雷射元件120射出之雷射光La集束在波長轉換薄片140之構成。   [0232] 反射鏡150係配置在波長轉換薄片140的周圍之碗狀元件,面向波長轉換薄片140之曲面成為光反射面。反射鏡150係將從波長轉換薄片140射出之光偏向於裝置前方(雷射光La之照射方向)。   [0233] 波長轉換薄片140所照射之雷射光La藉由波長轉換薄片140所含有之波長轉換材料轉換成白色光Lb,從發光裝置1000輸出。   [0234] 發光裝置1000雖具有1個半導體雷射元件120,但可具有2個以上。   [0235] 圖5表示發光裝置之變形例之斷面圖。在圖5及以下之說明,針對與於圖4說明之構成相同之構成,附上與圖4共通之符號。   [0236] 發光裝置1100係具有複數個基板110、與複數個半導體雷射元件(光源)120、與複數個光纖180、與導光部130、與波長轉換薄片140、與反射鏡150、與透明支持體190。   [0237] 光纖180於內部入射從半導體雷射元件120射出之雷射光La,於內部導光雷射光La。於複數個光纖180之一端分別光學性連接半導體雷射元件120。又,複數個光纖180於另一端側成束,以匯集成一束的狀態於另一端光學性連接在導光部130。   導光部130於內部入射從半導體雷射元件120射出之雷射光La,於內部導光雷射光La後,面向裝置前方射出。導光部130可具有集光對裝置前方射出之雷射光La的功能。   [0238] 波長轉換薄片140係以透明支持體190所支持之狀態,與導光部130離間,與導光部130對向來配置。透明支持體190以被覆反射鏡150之開口部分的方式進行,設置在裝置前方。透明支持體190係將藉由裝置使用中所發生之熱而不劣化之透明材料作為形成材料之元件,例如可使用玻璃板。   [0239] 波長轉換薄片140所照射之雷射光La,藉由波長轉換薄片140所含有之波長轉換材料轉換成白色光Lb,從發光裝置1100輸出。   [0240] 發光裝置1000、1100,如上述進行分離光源(半導體雷射元件120)及發光部(波長轉換薄片140)。藉此,使得發光裝置之小型化、或提昇設計性變容易。   [0241] 如以上之構成的發光裝置,由於具備兼備高硬度與高破裂耐性與高耐熱性之本實施形態之波長轉換薄片,成為信賴性高者。   [0242] <密封用元件、半導體發光裝置>   圖6係本實施形態之半導體發光裝置200之斷面圖。本實施形態之半導體發光裝置亦可作為在圖3~5之發光裝置的光源使用。   [0243] 半導體發光裝置200係具有基板210、與配置在基板上之半導體發光元件220、與密封半導體發光元件220之密封用元件230。密封用元件230係將上述之硬化物作為形成材料。半導體發光元件220藉由基板210與密封用元件230被覆而被密封,對外氣進行隔離。   [0244] 構成密封用元件230之硬化物,如上述係兼備高硬度與高破裂耐性與高耐熱性。又,與藉由石英玻璃所構成之密封部相比較,UV光之透過性為同等,光之提取效率提高且便宜。因此,具有本實施形態之密封用元件230之半導體發光裝置成為不易破損且信賴性高者。   [0245] 又,構成密封用元件230之硬化物,由於將縮合型矽氧樹脂硬化物定為構成要素,故不易因UV光而導致劣化。因此,具有本實施形態之密封用元件230之半導體發光裝置200,光源之半導體發光元件220即使是作為發光波長為400nm以下,進而為300nm以下之UV光源,亦成為不易劣化且信賴性高者。   [0246] 作為半導體發光元件220,並不限於射出UV光者。半導體發光元件220之發光波長可為紫外線區域(例如10~400nm),亦可為可見光區域(例如超過400nm未滿830nm),亦可為紅外線區域(例如830nm以上1000nm以下)。   [0247] 如以上構成之密封用元件,由於將上述之本實施形態的硬化物作為形成材料,故成為信賴性高者。   又,如以上構成之半導體發光裝置,由於具有將上述之本實施形態的硬化物作為形成材料之密封用元件,故成為信賴性高者。   [0248] 雖使用圖面1~6針對本發明合適之實施形態進行說明,但本發明之實施形態並非被限定於此等之例。在上述之例所示之各構成元件的諸形狀、組合等,可根據設計要求等進行各種變更。 [實施例]   [0249] 以下,雖由實施例更具體說明本發明,但本發明並非被限定於以下之實施例。   [0250] 在本實施例,將所得之試料用下述方法進行評估或測定。   [0251] <耐破裂性>   於直徑4cm之鋁製杯加入1.2g之矽氧樹脂組成物使其硬化。針對所得之硬化物,目視評估破裂的有無。   [0252] <強度>   製作寬度10mm、長度30mm、厚度1mm之試驗片,以下述條件於試驗片的中央以2.0mm/秒的速度加上荷重,測定試驗片破裂時之荷重及破壞變位。將試驗數(n數)定為5,將算術平均值定為測定結果。 [0253] 將試驗片破裂時之荷重(彎曲失效荷重、單位N)之平均值定為彎曲強度。將彎曲強度為20MPa以上之試驗片定為良好。   [0254] 將試驗片破裂時之破壞變位(破壞時變形量、單位mm)的平均值定為破裂時之扭曲。將破裂時之扭曲為3.0%以上之試驗片定為良好。   [0255] <耐熱性>   將縮合型矽氧樹脂硬化物(直徑4cm、厚度500μm之圓板狀)於250℃之烤箱中加熱。針對加熱前後之縮合型矽氧樹脂硬化物,評估在波長400nm之光透過率及外觀(摺皺、破裂的有無)。   [0256] <肖氏硬度>   針對縮合型矽氧樹脂硬化物(直徑4cm、厚度1500μm之圓板狀),用下述條件測定肖氏D硬度。   [0257] 於硬度計用自動低壓荷重器(股份有限公司Teclock製、型號GS-610),將裝著硬度計(股份有限公司Teclock製、型號GS-720G、型D)者作為測定裝置。尚,硬度計為橡膠‧塑料硬度計。使用此測定裝置,針對縮合型矽氧樹脂之硬化物,以1mm/秒之下降速度測定肖氏D硬度。測定係於5點實施,算出平均值。   [0258] 將肖氏D硬度為70以上之縮合型矽氧樹脂硬化物定為良好。   [0259] <透過率>   製作500μm厚之縮合型矽氧樹脂硬化物。針對所得之硬化物,用下述條件測定對於400nm波長之光的透過率。 裝置名 :JASCO V-670紫外可見近紅外分光光度計  積分球單位(ISN-723/B004861118)  掃瞄速度(C):1000nm/分鐘  測定波長 :200~800nm  數據讀取間隔(L):1.0nm   [0260] 將透過率為85%以上之硬化物定為良好。   [0261] <凝膠滲透層析(GPC)測定>   藉由使試料(矽氧樹脂)溶解在洗脫液後,以孔洞大小0.45μm之膜過濾器進行過濾,來調製測定溶液。針對所得之調製溶液,用下述條件測定標準聚苯乙烯換算之重量平均分子量(Mw)。 [0262] <固體29 Si-NMR>   製作硬化物,針對所得之硬化物,以下述條件,測定歸屬於T體之矽原子的峰值。具體而言,將從-80ppm至-40ppm之區域內的峰值作為歸屬於T體之矽原子的峰值,確認在上述區域之有無。 [0263] <不均勻域尺寸Ξ> (測定條件) [0264] 首先,使用冷凍粉碎機粉碎矽氧硬化物。作為冷凍粉碎機,例如可列舉日本興業股份有限公司製之JFC-300。將矽氧硬化物於液體氮中靜置10分鐘後,進行15分鐘粉碎。圖7為粉碎後之矽氧硬化物的SEM照片。   [0265] 其次,相對於所得之粉碎物10質量份,加入四氫呋喃90質量份,靜置24小時。將所得之膨潤樣品投入石英電池,進行小角X光解析。   [0266] 對於膨潤樣品(試料)照射X光,測定膨潤樣品之小角X光散射。從膨潤樣品至檢知器為止的長度例如可成為106cm,直接光束阻擋器的大小成為2mmφ。   [0267] 散射角2θ與直接光束位置的校正,例如使用山萮酸銀之1次(2θ=1.513°)與2次(2θ=3.027°)之個別的峰值進行。可測定之散射角2θ的範圍為0.08~3°。   [0268] 將測定結果使用Bruker AXS公司製之解析軟體(SAXS Ver.4.1.29)解析,可得到小角X光小角散射光譜。   又,即使針對使用未投入膨潤樣品之石英電池之對照測定測定,亦與上述同樣進。   [0269] 使用個別的測定所得之測定值,將膨潤樣品之小角X光散射的測定所使用之X光的波數定為橫軸,將從以膨潤樣品之小角X光散射所測定之測定散射強度減少對照散射之散射強度定為縱軸,作成繪圖膨潤樣品之小角X光散射的測定值之圖表。針對所得之圖表,藉由以上述式(A)進行擬合,而得到不均勻域尺寸Ξ。   擬合的範圍係以q=0.022Å-1 ~0.13Å-1 的範圍進行。   擬合之初期值成為1Å<ξ<50Å、1Å<Ξ<250Å。   [0270] [實施例1]   下述之矽氧樹脂A(Mw=3500)、低分子矽氧(Mw<1000)及烷氧基矽氧寡聚物(改質用矽氧、Mw=3400)皆為「縮合型矽氧樹脂」。烷氧基矽氧寡聚物相當於在本說明書之「寡聚物B」。低分子矽氧相當於在本說明書之「寡聚物C」。   [0271] 烷氧基矽氧寡聚物存在於重量平均分子量7500以上之區域的峰值之面積的總和,相對於峰值之全面積的總和為20%以上,存在於重量平均分子量1000以下之區域的峰值之面積的總和,相對於峰值之全面積的總和為30%以上。   [0272] 將矽氧樹脂A所包含之構造單位示於表1。將低分子矽氧所包含之構造單位示於表2。烷氧基矽氧寡聚物係包含95%以上由表3所示之構造單位所構成之樹脂。   [0273] (矽氧樹脂A)   [0274][0275] (低分子矽氧)   [0276][0277] (烷氧基矽氧寡聚物)   [0278][0279] 表1~3所示之各縮合型矽氧樹脂之構造單位的存在比率,係根據以下述條件所測定之溶液NMR的測定結果而算出之值。   [0280] <1 H-NMR測定條件> [0281] <29 Si-NMR測定條件> [0282] 藉由於油浴內所設置之燒瓶內,加入789.60g之矽氧樹脂A、與96.00g之乙酸丙酯、與314.40g之異丙基醇,以80℃進行攪拌,使矽氧樹脂A溶解於溶劑。   藉由於所得之溶液,加入8.47g之低分子矽氧、與75.08g之烷氧基矽氧寡聚物,攪拌1小時以上,使低分子矽氧及烷氧基矽氧寡聚物溶解於溶劑。   於所得之溶液加入274.49g之乙酸2-丁氧基乙酯、與0.22g之3-環氧丙氧基丙基三甲氧基矽烷(矽烷偶合劑)。   [0283] 將所得之混合物設定在蒸發器,將該混合物的溫度定為85℃,將蒸發器之減壓度定為2.0kPa的條件後,餾除乙酸丙酯及異丙基醇至該混合物中之乙酸丙酯及異丙基醇的合計濃度成為1質量%以下為止。   [0284] 藉由相對於所得之混合物100質量份,添加2質量份之硬化用觸媒(含有15質量%之磷酸),充分進行攪拌,而得到矽氧樹脂組成物。   [0285] 藉由將所得之矽氧樹脂組成物從室溫(25℃)階段性加熱至80℃、125℃、180℃,於80℃保持30分鐘,於125℃保持30分鐘,於180℃保持60分鐘,來實施使其硬化之步驟硬化(Step Cure)。具體而言,從室溫(25℃)以1.4℃/分鐘使其昇溫至80℃,於80℃保持30分鐘。其次,以4.5℃/分鐘使其昇溫至125℃,於125℃保持30分鐘。其次,以5.5℃/分鐘使其昇溫至180℃,於180℃保持60分鐘。   然後,藉由花費100分鐘從180℃放冷至25℃,而得到硬化物。   [0286] 在所得之硬化物的固體29 Si-NMR測定,確認歸屬於T體之矽原子的峰值。   [0287] 針對所得之硬化物,從SAXS測定的結果作成SAXS輪廓。將SAXS輪廓示於圖8。在圖8,橫軸Q係表示小角X光散射的測定所使用之X光的波數(單位:Å-1 )。縱軸I係表示從縮合型矽氧樹脂硬化物之小角X光散射所測定之測定散射強度減少對照散射的散射強度。由經作成之SAXS輪廓,確認不均勻域尺寸Ξ為74Å。   [0288] 針對所得之硬化物,係無破裂,耐破裂性良好。   針對所得之硬化物,彎曲強度為35MPa,彎曲應變(bending strain)為5%,強度良好。   針對所得之硬化物,肖氏D硬度為73,係良好。   針對所得之硬化物,透過率為92%,係良好。   [0289] 針對所得之硬化物,實施250℃、100小時之耐熱性試驗。在耐熱性試驗後之硬化物的外觀,未觀察到摺皺、破裂的發生。又,耐熱試驗後之硬化物的透過率為92%,維持住透明性。   [0290] [實施例2]   針對在實施例1之矽氧樹脂組成物的熱硬化條件,除了將從125℃至180℃為止的昇溫速度變更為0.1℃/分鐘之外,其他與實施例1同樣進行,而得到硬化物。   [0291] 在所得之硬化物的固體29 Si-NMR測定,確認歸屬於T體之矽原子的峰值。   [0292] 針對所得之硬化物,從SAXS測定的結果作成SAXS輪廓。將經作成之SAXS輪廓示於圖8。由經作成之SAXS輪廓,確認不均勻域尺寸Ξ為134Å。   [0293] 針對所得之硬化物,係無破裂,耐破裂性良好。   針對所得之硬化物,彎曲強度為28MPa,彎曲應變為5%,強度良好。   針對所得之硬化物,肖氏D硬度為76,係良好。   針對所得之硬化物,透過率為92%,係良好。   [0294] 針對所得之硬化物,實施250℃、100小時之耐熱性試驗。在耐熱性試驗後之硬化物的外觀,未觀察到摺皺、破裂的發生。又,耐熱性試驗後之硬化物的透過率為92%,維持住透明性。   [0295] [實施例3]   將下述之矽氧樹脂B(Mw=3500)所包含之構造單位示於表4。表4所示之矽氧樹脂B之構造單位的存在比率,係根據上述之溶液NMR的測定結果所算出之值。矽氧樹脂B相當於在本說明書之「縮合型矽氧樹脂」。   [0296] (矽氧樹脂B)   [0297][0298] 於燒瓶內加入矽氧樹脂80質量份、與乙酸2-丁氧基乙酯20質量份,進行攪拌而得到混合物。然後,藉由相對於所得之混合物100質量份,加入2質量份硬化用觸媒(含有15質量%之磷酸),進行充分攪拌,而得到矽氧樹脂組成物。   [0299] 將所得之矽氧樹脂組成物與在實施例2之矽氧樹脂組成物的熱硬化條件相同條件來使其熱硬化,而得到硬化物。   [0300] 在所得之硬化物的固體29 Si-NMR測定,確認歸屬於T體之矽原子的峰值。   [0301] 針對所得之硬化物,從SAXS測定之結果作成SAXS輪廓。由經作成之SAXS輪廓,確認不均勻域尺寸Ξ為213Å。   [0302] 針對所得之硬化物,係無破裂,耐破裂性良好。   針對所得之硬化物,彎曲強度為35MPa,彎曲應變為5.0%,強度良好。   針對所得之硬化物,肖氏D硬度為74,係良好。   針對所得之硬化物,透過率為92%,係良好。   [0303] 針對所得之硬化物,實施250℃、100小時之耐熱性試驗。在耐熱性試驗後之硬化物的外觀,未觀察到摺皺、破裂的發生。又,耐熱性試驗後之硬化物的透過率為92%,維持住透明性。   [0304] [比較例1]   攪拌混合矽氧樹脂B80質量份與乙酸2-丁氧基乙酯20質量份,而得到矽氧樹脂組成物。   [0305] 藉由將所得之矽氧樹脂組成物從室溫加熱至150℃,於150℃保持5小時,來使其硬化。具體而言,從室溫(25℃)以3℃/分鐘使其昇溫至40℃,於40℃保持10分鐘。其次,以4℃/分鐘使其昇溫至150℃,於150℃保持5小時。然後,藉由花費2小時放冷至室溫,而得到硬化物。   [0306] 在所得之硬化物的固體29 Si-NMR測定,確認歸屬於T體之矽原子的峰值。   [0307] 針對所得之硬化物,從SAXS測定之結果作成SAXS輪廓。將經作成之SAXS輪廓示於圖8。由經作成之SAXS輪廓,確認不均勻域尺寸Ξ為36Å。   [0308] 針對所得之硬化物,有破裂,耐破裂性不良。   所得之硬化物,並非彎曲強度、肖氏D硬度及透過率可測定之大小。   [0309] 由以上,瞭解到本發明之硬化物為有用。 [產業上之可利用性]   [0310] 根據本發明,可提供一種兼備高硬度與高破裂耐性與高耐熱性之硬化物。又,可提供一種將該硬化物作為形成材料之波長轉換薄片、發光裝置、密封用元件及半導體發光裝置。[0013] Hereinafter, embodiments of the present invention will be described. [0014] The structural unit included in the silicone resin is preferably included in the silicone resin as a repeating unit. [0015] 〈Hardened material〉 硬化 The hardened material of the present invention contains a condensation type silicone resin hardened material, which satisfies the following (1) and (2), (1) is a solid of the condensation type silicone resin hardened material29 Si-nuclear magnetic resonance spectrum, there is a peak of the silicon atom belonging to the T body; (here, the so-called silicon atom of the T body means a silicon atom bonded to 3 oxygen atoms) (2) the following unevenness The size of the domain is 50 Å or more, 于 (here, the size of the non-uniform domain refers to the horizontal axis of the X-ray wave used for the measurement of small-angle X-ray scattering. Measure the scattering intensity to reduce the scattering intensity. The scattering intensity of the control scattering is determined as the vertical axis. The measured values of the small-angle X-ray scattering of the sample obtained by impregnating the condensation-type silicone resin hardened material with tetrahydrofuran and making it swell are plotted. A) The value obtained by performing the fitting). [0016](Here, ξ represents the size of the network sieve, Ξ represents a large non-uniform domain, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants. [0017] In the following description, small angle X-ray scattering may be referred to as SAXS. [0018] (Condensed Silicone Resin Hardened Material) Condensed silicone resin is used as the raw material of the condensed silicone resin hardened material included in the cured product of this embodiment. Condensed silicone resins can be used alone or in combination of two or more. The so-called condensation-type silicone resin is a resin that is polycondensed by a dealcoholization reaction or a dehydration reaction of a hydroxyl group bonded to a silicon atom and an alkoxy group or a hydroxyl group bonded to another silicon atom. [0019] The condensation-type silicone resin as a raw material of the condensation-type silicone resin hardened material included in the cured material of this embodiment includes a structural unit represented by the following formula (A3). The condensation-type silicone resin preferably further includes one selected from the group consisting of a structural unit represented by the formula (A1), a structural unit represented by the formula (A1 '), and a structural unit represented by the formula (A2). The above-mentioned structural unit preferably further includes all of the structural unit represented by the formula (A1), the structural unit represented by the formula (A1 '), and the structural unit represented by the formula (A2). [0020](In formula (A1), formula (A1 '), formula (A2), and formula (A3), R1 Represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, R2 Represents an alkoxy or hydroxyl group having 1 to 4 carbon atoms, plural R1 And R2 They can be the same or different). [0021] In this specification, a structural unit including a silicon atom bonded to three oxygen atoms is referred to as a "T body". In addition, a structural unit containing a silicon atom in which all of the three oxygen atoms are bonded to other silicon atoms is referred to as a "T3 body". In addition, a structural unit containing a silicon atom in which two of the three oxygen atoms are bonded to other silicon atoms is referred to as a "T2 body". In addition, a structural unit containing a silicon atom in which one of the three oxygen atoms is bonded to another silicon atom is referred to as a "T1 body". That is, "T body" means "T1 body", "T2 body", and "T3 body". [0022] In this specification, a structural unit including a silicon atom bonded to two oxygen atoms is referred to as a "D body". A structural unit containing a silicon atom bonded to one oxygen atom is referred to as "M body". [0023] The structural unit represented by formula (A3) includes three oxygen atoms bonded to other silicon atoms and1 Bonded silicon atoms. Since R1 Since it is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, the structural unit represented by formula (A3) is a T3 body. [0024] The structural unit represented by formula (A2) includes two oxygen atoms bonded to other silicon atoms, two, and R1 And R2 Bonded silicon atoms. Since R2 Since it is an alkoxy group or a hydroxyl group having 1 to 4 carbon atoms, the structural unit represented by the formula (A2) is a T2 body. [0025] The structural unit represented by formula (A1) includes an oxygen atom bonded to another silicon atom, and R1 And 2 R2 Bonded silicon atoms. Since R1 An alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, R2 Since it is an alkoxy group or a hydroxyl group having 1 to 4 carbon atoms, the structural unit represented by the formula (A1) is a T1 body. [0026] The structural unit represented by the formula (A1 ′) includes R1 And 2 R2 Bonded silicon atoms, which are bonded to oxygen atoms, which are bonded to silicon atoms in other structural units. Since R1 An alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, R2 Since it is an alkoxy group or a hydroxyl group having 1 to 4 carbon atoms, the structural unit represented by the formula (A1 ') is a T1 body. [0027] The structural unit represented by the formula (A1) and the structural unit represented by the formula (A1 ') constitute the end of the organic polysiloxane chain contained in the condensation type silicone resin hardened body. The structural unit represented by the formula (A3) constitutes a branched chain structure of an organic polysiloxane chain included in the condensation-type silicone resin cured product. That is, the structural unit represented by the formula (A3) forms a part of the network structure or the ring structure of the condensation-type silicone resin hardened material. [0028] In this specification, the silicon atom contained in the T3 body is referred to as "T3 silicon atom". The silicon atom contained in the T2 body is referred to as "T2 silicon atom". The silicon atom contained in the T1 body is referred to as "T1 silicon atom". [0029] The total content of the T1 body, the T2 body, and the T3 body is preferably 50 mol% or more with respect to the total content of the entire structural unit of the condensation type silicone resin. In other words, the total content of the T1 silicon atom, the T2 silicon atom, and the T3 silicon atom is preferably 50 mol% or more with respect to the total content of the total silicon atoms of the condensation type silicone resin. Furthermore, the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms is more preferably 60 mol% or more, and more preferably 70 mol% or more, relative to the total content of all silicon atoms of the condensation type silicone resin. , And more preferably 80 mol% or more, and even more preferably 90 mol% or more. [0030] The content of the D body is preferably 30 mol% or less, more preferably 20 mol% or less, and still more preferably 10 mol% or less, relative to the total content of the entire structural unit of the condensation type silicone resin. It is still more preferably 5 mol% or less, and even more preferably 4 mol% or less. [0031] The total content of T1, T2, and T3 bodies can be determined by29 The total area of signals (Signal) of all silicon atoms obtained by Si-NMR measurement is obtained by dividing by the total area of signals assigned as T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms. [0032] The content of the T3 body is preferably 50 mol% or more relative to the total content of the entire structural unit of the condensation type silicone resin. In other words, the content of T3 silicon atoms is preferably 50 mol% or more relative to the total content of all silicon atoms of the condensation type silicone resin. Furthermore, the content of T3 silicon atoms is more preferably 60 mol% or more, and even more preferably 70 mol% or more, relative to the total content of all silicon atoms of the condensation type siloxane resin. [0033] T3 silicon atom content can be determined by29 The total area of the signals of all silicon atoms obtained by Si-NMR measurement was determined by dividing by the area of the signal assigned as the T3 silicon atom. The content of silicon atoms other than T3 silicon atoms can also be determined in the same manner. [0034] R1 The alkyl group having 1 to 10 carbon atoms may be a linear alkyl group, a branched alkyl group, or an alkyl group having a cyclic structure. Among these, a linear or branched alkyl group is preferred, and a linear alkyl group is more preferred. [0035] R1 The alkyl group having 1 to 10 carbon atoms represents that one or more hydrogen atoms constituting the alkyl group may be substituted with other functional groups. Examples of the substituent of the alkyl group include an aryl group having 6 to 10 carbon atoms such as a phenyl group and a naphthyl group, and a phenyl group is preferred. [0036] as R1 Examples of the alkyl group having 1 to 10 carbon atoms include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, n-pentyl, and neopentyl. Unsubstituted alkyl, such as phenyl, hexyl, octyl, nonyl, decyl, arylalkyl such as phenylmethyl, phenylethyl, and phenylpropyl. Among these, a methyl group, an ethyl group, an n-propyl group, or an n-butyl group is preferable, a methyl group, an ethyl group, or an isopropyl group is more preferable, and a methyl group is even more preferable. [0037] R1 The aryl group having 6 to 10 carbon atoms represents that one or more hydrogen atoms constituting the aryl group may be substituted with other functional groups. Examples of the substituent of the aryl group include an alkyl group having 1 to 10 carbon atoms such as methyl, ethyl, propyl, and butyl. [0038] as R1 Examples of the aryl group having 6 to 10 carbon atoms include unsubstituted aryl groups such as phenyl and naphthyl, and alkylaryl groups such as methylphenyl, ethylphenyl, and propylphenyl. Among these, phenyl is preferred. [0039] as R1 Is preferably an alkyl group, more preferably a methyl group, an ethyl group, or an isopropyl group, and still more preferably a methyl group. [0040] R2 The alkoxy group having 1 to 4 carbon atoms may be a linear alkoxy group, a branched alkoxy group, or an alkoxy group having a cyclic structure. Among these, a linear or branched alkoxy group is preferable, and a linear alkoxy group is more preferable. 004 [0041] as R2 The alkoxy group having 1 to 4 carbon atoms, for example, is preferably a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, or a tert-butoxy group. Is preferably methoxy, ethoxy or isopropoxy. [0042] as R2 , Preferably methoxy, ethoxy, isopropoxy or hydroxyl. [0043] The condensation type silicone resin as a raw material of the condensation type silicone resin hardened material included in the hardened material of this embodiment may further include the following formula (C1), formula (C1 '), formula (C2), formula (C3) or a structural unit represented by formula (C4). [0044](In formula (C1), formula (C1 '), formula (C2), formula (C3), and formula (C4), R7 Represents an alkoxy or hydroxyl group having 1 to 4 carbon atoms, and a plurality of R7 It can be the same or different). [0045] In this specification, a structural unit including a silicon atom bonded to four oxygen atoms is referred to as a "Q body". Also, a structural unit containing a silicon atom in which one of the four oxygen atoms is bonded to another silicon atom is called a "Q1 body". The structural unit represented by formula (C1) and the structural unit represented by formula (C1 ') are "Q1 bodies". Also, a structural unit containing a silicon atom in which two of the four oxygen atoms are bonded to other silicon atoms is called a "Q2 body". The structural unit represented by formula (C2) is "Q2 body". Also, a structural unit containing a silicon atom in which three of the four oxygen atoms are bonded to other silicon atoms is called a "Q3 body". The structural unit represented by formula (C3) is "Q3 body". In addition, a structural unit containing a silicon atom in which all the four oxygen atoms are bonded to other silicon atoms is referred to as a "Q4 body". The structural unit represented by formula (C4) is "Q4 body". [0046] That is, the Q system means Q1 body, Q2 body, Q3 body, and Q4 body. [0047] The specific gravity of the condensation type silicone resin hardened material included in the hardened material of this embodiment is preferably 1.20 to 1.35. The specific gravity of the condensed silicone resin hardened body can be appropriately adjusted by controlling the content ratios of D body, T body, and Q body. [Dimensions of non-uniform domain] As a result of diligent research, the inventors found that the small-angle X-ray scattering measurement is performed on the condensation type silicone resin hardened material, and a specific parameter calculated from the measured value of the small-angle X-ray scattering , Is related to the fracture resistance and hardness of the hardened material (that is, the mechanical properties of the hardened material). That is, it was found that the hardened material having specific parameters satisfying specific requirements is excellent in hardness and fracture resistance. Moreover, it was found that the hardened | cured material whose specific parameter satisfies a specific requirement maintains intensity | strength and transparency (namely, it is excellent in heat resistance) even after exposure to high temperature. 00 [0049] Specifically, as a parameter, a hardened material system having a non-uniform domain size of 50 Å or more below is excellent in hardness, fracture resistance, and heat resistance. [0050] The size of the non-uniform domain is determined by setting the wave number of X-rays used in the measurement of small-angle X-ray scattering as the horizontal axis. As a vertical axis, a graph obtained by plotting the measured values of small-angle X-ray scattering of a sample in which a condensation-type silicone resin hardened material is impregnated with tetrahydrofuran, and the value obtained by fitting the following formula (A). [0051](Here, ξ represents the size of the network sieve, Ξ represents the size of the non-uniform domain, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants). [0052] The size of the network sieve indicated by ξ refers to a sample in which the condensation type silicone resin hardened material included in the hardened material of this embodiment is impregnated with tetrahydrofuran to expand the T3 silicon atom at the crosslinking point. The index value of the distance. [0053] The fitting constants represented by A and B are arbitrary constants used when fitting by formula (A). [0054] Formula (A) means curve fitting by the Squared Lorentz function and the Ornstein-Zernike function. The fitting parameters were obtained by the method of least squares. [0055] The range of the fit is at q = 0.022.-1 ~ 0.13Å-1 Range. The initial value of fitting is 1Å <ξ <50Å, 1Å <Ξ <250Å. [0056] The measurement of small-angle X-ray scattering can be performed using a small-angle X-ray scattering device equipped with a two-dimensional detector. Examples of such a device include NanoSTAR (device name, manufactured by Bruker AXS Co., Ltd.). [0057] First, a condensation type silicone resin cured product is pulverized using a freeze pulverizer. Examples of the freeze pulverizer include JFC-300 manufactured by Japan Industrial Co., Ltd. The siloxane hardened material was pulverized until the average particle diameter became 100 μm or less. [0058] Next, 90 parts by mass of tetrahydrofuran was added to 10 parts by mass of the obtained pulverized product, and left to stand for 24 hours. The swelled sample thus obtained was put into a quartz cell and subjected to small-angle X-ray analysis. [0059] X-rays, such as an X-ray generator of a rotary counter-cathode type using a Cu target, are generated at an output of 50 kV and 100 mA. The swelled sample (sample) was irradiated with the generated X-rays. [0060] For example, X-rays are irradiated through an optical system of X-rays composed of a cross-coupled Gobel mirror and three pinhole slits (the apertures of the slits are 500 μmφ, 150 μmφ, 500 μmφ from the X-ray generator side) The swelling sample. The X-rays scattered on the swelling sample were detected using a two-dimensional detector (two-dimensional Multi Wire detector, Hi-STAR). [0061] The length from the swelling sample to the detector can be, for example, 106 cm, and the size of the direct beam stopper can be, for example, 2 mmφ. The degree of vacuum in the device is, for example, 40 Pa or less. [0062] The correction of the scattering angle 2θ and the position of the direct beam is performed using, for example, individual peaks of the first (2θ = 1.513 °) and the second (2θ = 3.027 °) silver behenate. In this case, the measurable scattering angle 2θ ranges from 0.08 to 3 °. [0063] A small-angle X-ray small-angle scattering spectrum can be obtained by analyzing the obtained two-dimensional scattering image using, for example, analysis software (SAXS Ver. 4.1.29) manufactured by Bruker AXS. The small-angle X-ray scattering spectrum obtained is the wave number of X-rays on the horizontal axis (unit: Å-1 ), The vertical axis is the measured scattering intensity. [0064] In addition, the measurement of the control scattering using a quartz cell without a swelling sample can be performed in the same manner as described above. [0065] Using the measured values obtained from individual measurements, the wave number of the X-rays used for the measurement of the small-angle X-ray scattering of the swelling sample is taken as the horizontal axis, and the measurement scattering from the measurement of the small-angle X-ray scattering of the swelling sample is taken as the horizontal axis. The scattering intensity of the intensity-reduced control scattering is defined as the vertical axis, and a chart plotting the measured values of the small-angle X-ray scattering of the swelling sample is plotted. The obtained graph was fitted with the above formula (A) to obtain the uneven domain size Ξ. [0066] For small-angle X-ray scattering, in general, the contrast of electron densities in sparse and dense matter from the shape of particles or cross-linking points is reflected in the scattering profile. For regions with high crosslink density (such as T3 silicon atom-intensive regions), scattering at normal small angle X-rays does not result in scattering by the difference in electron density at the crosslink point. However, by swelling the hardened material with a solvent, due to the network structure of the diffusion hardened material and the contrast between the solvent and the hardened material, scattering from the unevenness of the cross-linking points in the hardened material can be obtained. [0067] As a result of research by the inventors, it was found that the above-mentioned heterogeneity of the cross-linking points is related to the mechanical properties of the hardened material. When a hardened product is formed, when a crosslinking reaction occurs uniformly in space, a hardened product having a uniform distribution of crosslinking points is obtained. On the other hand, when a hardened product is formed, when a crosslinking reaction occurs due to spatial unevenness due to molecular fluctuations or the like, a hardened product with unevenly distributed crosslinking points is obtained. As a result of studies conducted by the inventors, it has been found that the hardened product in which the crosslinking reaction is more unevenly distributed than a predetermined standard is controlled in controlling the cross-linking reaction when the hardened product is formed, and has excellent hardness and fracture resistance. In addition, it was found that the "non-uniformity of the cross-linking points" can be quantitatively evaluated by the above-mentioned non-uniform domain size. [0068] FIG. 1 is a schematic diagram showing a state of polymerization as described above, showing the distribution of T3 silicon atoms contained in a silicone resin. In Fig. 1, the shades of color indicate the amount of T3 silicon atoms. The dots with thin colors indicate regions with less T3 silicon atoms, and the dots with thick colors indicate regions with more T3 silicon atoms. [0069] That is, before the condensation type silicone resin hardened product is swollen with tetrahydrofuran (FIG. 1 (a)), even if the density of T3 silicon atoms is not clear, it can be emphasized that the condensation type silicone resin The hardened product swells with tetrahydrofuran, forming a "non-uniform" state (region shown in Fig., Indicated by symbol A) with a small amount of T3 silicon atoms and a region where there are more T3 silicon atoms (indicated by symbol B in the figure). 1 (b)). [0070] For small-angle X-ray scattering, the scattering profile is obtained based on the comparison of the electron densities of areas A and B. The above-mentioned non-uniform domain size corresponds to the average distance between the center-to-center distances d between the area A1 and the area A2 schematically shown in FIG. 1 (b). In FIG. 1 (b), the center of the area A1 is represented by the symbol P1, and the center of the area A2 is represented by the symbol P2. [0071] The center of a region is located at the center of gravity of each region. That is, the center of the area A1, that is, P1 and the center of the area A2, that is, P1, respectively correspond to the centers of gravity of the areas A1 and A2. [0072] When T3 silicon atoms are uniformly distributed in the hardened material, since the T3 silicon atoms are uniformly distributed even in the swelling sample, the size of the non-uniform domain is reduced. That is, it means that the size of the non-uniform domain Ξ is a small hardened product, and the distribution of T3 silicon atoms is uniform. When the T3 silicon atoms are more unevenly distributed in the hardened material than a predetermined standard, the stress can be dispersed throughout the hardened material even if stress is applied to the hardened material. Therefore, a hardened system in which T3 silicon atoms are more unevenly distributed than a predetermined reference has high fracture resistance. As a result of studies conducted by the inventors, it was found that a hardened product having a non-uniform domain size Ξ of 50 Å or more has both high hardness and high fracture resistance. It is thought that T3 silicon atoms maintain strength in dense areas, and T3 silicon atoms relax stress in sparse areas. [0073] The condensation type silicone resin hardened material included in the hardened material of the present embodiment preferably has an uneven domain size Ξ of 50 Å to 600 Å. [0074] The size of the uneven domain is preferably 60 Ξ or more, more preferably 70 Å or more, even more preferably 80 Å or more, particularly preferably 90 Å or more, particularly still more preferably 100 Å or more, and even more preferably 110 Å or more, It is still more particularly preferably 120 Å or more, and still more preferably 130 Å or more. [0075] The uneven domain size Ξ is preferably 500 Å or less, more preferably 400 Å or less, even more preferably 300 Å or less, particularly preferably 200 Å or less, and even more preferably 150 Å or less. 007 [0076] The size of the non-uniform domain Ξ satisfies the hardened matter in this range, and it is suitable for device application because it meets high hardness (with Shore D hardness of 70 or more) and high fracture resistance. [0077] In this specification, the hardness measured by a type D hardness tester (rubber · plastic hardness tester) at a falling speed of 1 mm / sec is referred to as Shore D hardness. [0078] (Control method of non-uniform field size Ξ) 进行 A control method of the non-uniform field size Ξ will be described. The condensation type silicone resin hardened material included in the hardened material of this embodiment is preferably a silicone resin (hereinafter referred to as "silicone resin A") mixed with a main agent and an oligomer described later. The condensed silicone resin obtained as a component is a cured product obtained by heating and curing. At this time, the size of the non-uniform domain can be controlled by adjusting the type of the silicone resin A and the oligomer component of the raw material, the blending ratio, or the curing conditions during curing. It is more effective to adjust the hardening conditions during hardening to control the size of the non-uniform domain. [0079] Most of the silicone resin A is a material containing a cross-linking point (branched structure) forming a network structure. The oligomer component has a linear structure such as a T2 body and a D body structure, and is a material having fewer crosslinking points than the silicone resin A. Hereinafter, the silicone resin A and oligomer components will be described. [0080] "Silicon Resin A" Silicone Resin A contains a structural unit represented by the above formula (A3). Further, the silicone resin A preferably further includes a group selected from the group consisting of a structural unit represented by the formula (A1), a structural unit represented by the formula (A1 ′), and a structural unit represented by the formula (A2). 1 or more structural units. [0081] In the silicone resin A, the total content of the T1 body, the T2 body, and the T3 body is generally 70 mol% or more relative to the total content of the entire structural unit of the silicone resin A.矽 In the silicone resin A, the content of the T3 body is generally 60 mol% to 90 mol% relative to the total content of the entire structural unit of the silicone resin A. The weight average molecular weight of silicone resin A in terms of polystyrene is usually 1500 to 8000. [0082] In the silicone resin A, the total content of the T1 body, the T2 body, and the T3 body is preferably 80 mol% or more, and more preferably 90 mol% relative to the total content of the entire structural unit of the silicone resin A. Above, still more preferably above 95 mol%. [0083] In the silicone resin A, the content of the T3 body is preferably 65% or more and 90% or less, and more preferably 70% or more and 85% or less, relative to the total content of the entire structural unit of the silicone resin A. [0084] The polystyrene equivalent weight average molecular weight of the silicone resin A is preferably 1,500 or more and 7,000 or less, and more preferably 2,000 or more and 5,000 or less. [0085] As the silicone resin A, a commercially available silicone resin can be used. [0086] The silicone resin A preferably has a silanol group (Si-OH). In the silicone resin A, the silicon atom having a silanol group is preferably 1 to 30 mole%, more preferably 5 to 27 mole%, and even more preferably to all the silicon atoms contained in the silicone resin A. 10 to 25 mole%. In the case of the silicone resin A, if the content of the silicon atom having a silanol group is within the above-mentioned range, since the rate of progress of hardening is within an appropriate range, the structure is controlled by the hardening conditions of the silicone resin described later. The combination can effectively control the mechanical properties such as hardness and strength of the hardened material. [0087] In the silicone resin A, the silicon atom having an alkoxy group is preferably more than 0 mol% and 20 mol% or less, more preferably, all silicon atoms contained in the silicone resin A. More than 0 mole% and 10 mole% or less, more preferably 1 mole% or more and 10 mole% or less. In the silicone resin A, if the content of silicon atoms having an alkoxy group is within the above-mentioned range, the flowability of the silicone resin composition obtained by dissolving the silicone resin in a solvent becomes an appropriate range, and the silicon is improved. The operability of the oxygen resin composition. [0088] Silicone resin A can be synthesized using an organic silicon compound having a functional group capable of generating a siloxane bond as a starting material. Here, examples of the "functional group capable of generating a siloxane bond" include a halogen atom, a hydroxyl group, and an alkoxy group. Examples of the organic silicon compound corresponding to the structural unit represented by the formula (A3) include organic trihalosilane and organic trialkoxysilane. Silicone resin A can be hydrolyzed and condensed by the organic silicon compound of the starting material at a ratio corresponding to the existence ratio of each structural unit in the presence of an acid such as hydrochloric acid or a base such as sodium hydroxide. The reaction is performed to synthesize. The proportion of T3 silicon atoms contained in the siloxane resin A can be adjusted by appropriately selecting the organic silicon compound of the starting material. [0089] The content of the silicone resin A contained in the condensation-type silicone resin is preferably 60% to 100% by mass, and more preferably 70% relative to the total content of the total silicone resin contained in the condensation-type silicone resin. ~ 95 mass%. [0090] "Oligomer Components" Condensation type siloxane resin contains siloxane resin A, has a lower content than siloxane resin AT3, and has a linear structure oligomer. It is easy to produce a polymerization reaction. The area that is caused and the area that is not easily caused by the polymerization reaction. As a result, the obtained hardened material has "appropriate unevenness". [0091] [Oligomer B] As the oligomer component, for example, an oligomer containing a structural unit represented by the following formula (B1), formula (B1 '), formula (B2), or formula (B3) is mentioned. [0092](In formula (B1), formula (B1 '), formula (B2), and formula (B3), R3 Represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, R4 Represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkoxy group or hydroxyl group having 1 to 4 carbon atoms, plural R3 And R4 They can be the same or different). [0093] The weight average molecular weight in terms of polystyrene of an oligomer including a structural unit represented by formula (B1), formula (B1 ′), formula (B2), or formula (B3) is preferably 1,000 to 10,000, and more It is preferably 2000 to 8000, and even more preferably 3000 to 6000. [0094] In the following description, an oligomer having a weight average molecular weight of 1,000 to 10,000 including a structural unit represented by the formula (B1), the formula (B1 ′), the formula (B2), or the formula (B3) is included. The composition is called "oligomer B". [0095] The oligomer B is preferably (a) an oligomer containing a T2 body or (b) an oligomer containing a D body, more preferably an oligomer satisfying (a) and (b), that is, (c) An oligomer comprising a T2 body and a D body. [0096] (a) T2 oligomer As (a) T2 oligomer, its structural unit represented by formula (B2), preferably R4 The content of the structural unit of an alkoxy group or a hydroxyl group of 1 to 4 carbons, that is, the content of the T2 body is 30 to 60 mole%, and more preferably 40 to 55 mole%. [0097] When the oligomer B is (a) an oligomer containing a T2 body, if the content of the T2 body is within the above-mentioned range, the condensation type silicone resin secures the silicone resin A and the oligomer B. It has good solubility and shows good curing reactivity during thermal curing. (B) an oligomer containing a D-form as (b) an oligomer containing a D-form, which includes one represented by formula (B1), formula (B1 '), formula (B2), or formula (B3) The siloxane resin having a structural unit is preferably a siloxane resin having an average composition formula represented by the following formula (I).(Where R5 Represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, R6 Represents an alkyl group having 1 to 10 carbon atoms, an aryl group or hydrogen atom having 6 to 10 carbon atoms, n represents a real number satisfying 1 <n <2, and m represents a real number satisfying 0 <m <1). [0099] The oligomer B having an average composition formula represented by the above formula (I) includes the above-mentioned T-form and D-form. [0100] In formula (I), R5 Methyl is preferred, R6 A methyl group or a hydrogen atom is preferred. Preferably, n is a real number satisfying 1 <n ≦ 1.5, and m is a real number satisfying 0.5 ≦ m <1, more preferably n is a real number satisfying 1.1 ≦ n ≦ 1.4, and m is a real number satisfying 0.55 ≦ m ≦ 0.75. Real number. When n and m in the formula (I) fall within these ranges, the compatibility between the oligomer B and the silicone resin A becomes good. [0101] Among all the structural units included in the oligomer B, the structural unit represented by formula (B1) and the structural unit represented by formula (B1 '), 2 R4 One of them is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and the other is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group. The structural unit is "D1 form". [0102] Among all the structural units included in the oligomer B, the structural unit represented by the formula (B2), R4 The structural unit of an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms is "D2 body". [0103] When the oligomer B is (b) an oligomer containing a D form, the total content of the D1 form and the D2 form among the total structural units included in the oligomer B is preferably 5 to 80 moles. %, More preferably 10 to 70 mole%, even more preferably 15 to 50 mole%. (C) an oligomer containing a T2 body and a D body (c) an oligomer containing a T2 body and a D body, which satisfies (a) an oligomer containing a T2 body and (b) a containing D body The oligomers are the requirements of both parties. [0105] Among all the structural units included in the oligomer B, the structural unit represented by formula (B1) and the structural unit represented by formula (B1 '), 2 R4 The structural unit which is an alkoxy group or a hydroxyl group having 1 to 4 carbon atoms is a T1 body. [0106] Among all the structural units included in oligomer B, the structural unit represented by formula (B2), R4 The structural unit having an alkoxy group or a hydroxyl group having 1 to 4 carbon atoms is a T2 body. [0107] Among all the structural units included in the oligomer B, the structural unit represented by the formula (B3) is a T3 body. [0108] When the oligomer B is (c) an oligomer containing a T2 body and a D body, among the total structural units included in the oligomer B, the total content of the T1 body, T2 body, and T3 body, The molar ratio of the content of the D body (T body: D body) is preferably 60:40 to 90:10. [0109] The oligomer B corresponds to each of the above-mentioned structural units constituting the siloxane resin, and an organic silicon compound having a functional group capable of generating a siloxane bond can be synthesized as a starting material. Here, examples of the "functional group capable of generating a siloxane bond" include a halogen atom, a hydroxyl group, and an alkoxy group. [0110] Examples of the organic silicon compound corresponding to the structural unit represented by the formula (B3) include organic trihalosilane and organic trialkoxysilane. Examples of the organic silicon compound corresponding to the structural unit represented by the formula (B2) include an organic dihalosilane and an organic dialkoxysilane. [0111] The oligomer B can be hydrolyzed and condensed by converting the organosilicon compound of the starting material at a ratio corresponding to the existence ratio of each structural unit in the presence of an acid such as hydrochloric acid or a base such as sodium hydroxide. It is made to react and synthesize | combine. By appropriately selecting the organic silicon compound of the starting material, the existence ratio of the silicon atom of the T body to the silicon atom of the D body can be adjusted. [0112] The content of the oligomer B contained in the condensation silicone resin is preferably 0.1 to 20% by mass, and more preferably 0.2 to 15% with respect to the total content of the all silicone resin contained in the condensation silicone resin. Mass%, more preferably 0.5 to 10 mass%. [0113] The content of the oligomer B contained in the condensation-type silicone resin is preferably 0.1% to 20% by mass, and more preferably, relative to the content of the silicone-type resin A contained in the condensation-type silicone resin. 1 mass% to 15 mass%, and even more preferably 5 mass% to 12 mass%. [0114] "Oligomer C" (1) As another oligomer component, for example, it may include a structural unit represented by the above formula (A1), the above formula (A1 '), the above formula (A2), or the above formula (A3) The content of the structural unit represented by the above formula (A3) is relative to the total content of the structural unit represented by the above formula (A1), the above formula (A1 '), the above formula (A2) and the above formula (A3) Silicone resin with a ratio of 0 to 30 mol% and a polystyrene equivalent weight average molecular weight of less than 1500. In the following description, such a silicone resin is referred to as "oligomer C". [0115] The ratio of the content of the oligomer C-based T3 silicon atom to the total content of the T1 silicon atom, the T2 silicon atom, and the T3 silicon atom is 0 to 30 mol%, and the weight average molecular weight in terms of polystyrene is less than 1500. Of silicone. The ratio of the content of the T3 silicon atom to the total content of the T1 silicon atom, the T2 silicon atom, and the T3 silicon atom is preferably 0 to 25 mol%. [0116] It is preferable that the oligomer C has substantially no silicon atom (hydrosilyl group) bonded to a hydrogen atom and a silicon atom bonded to an alkenyl group. When the oligomer C has a silicon atom or a hydrosilyl group bonded to an alkenyl group, the heat resistance of the hardened product of this embodiment tends to decrease. [0117] The oligomer C is preferably an oligomer having an organic polysiloxane structure represented by the following formula (2). [0118](In formula (2), R1 And R2 Represents the same meaning as before, plural R1 And R2 Can be the same or different, p2 , Q2 , R2 , A2 And b2 Expressed as [a2 × q2 ] / [(p2 + b2 × q2 ) + a2 × q2 + (r2 + q2 )] = Any number from 0 to 0.3). [0119] The structure of the organopolysiloxane represented by formula (2), preferably R1 Is one or more groups selected from the group consisting of methyl, ethyl, and phenyl, R2 One or more groups selected from the group consisting of methoxy, ethoxy, isopropoxy, and hydroxyl groups, more preferably R1 Is one or more groups selected from the group consisting of methyl and ethyl, R2 It is one or more types selected from the group consisting of methoxy, ethoxy, and isopropoxy. In particular, from the viewpoint of the heat resistance of the cured product of this embodiment, R is1 It is preferably methyl. [0120] The existence ratio of each structural unit of the oligomer C having the organic polysiloxane structure represented by formula (2) can be expressed by the existence ratio of T1 silicon atom, T2 silicon atom, and T3 silicon atom. That is, T1 silicon atom: T2 silicon atom: T3 silicon atom = [r2 + q2 ]: [P2 + b2 × q2 ]: [A2 × q2 ]. The presence ratio of each silicon atom in oligomer C can be adjusted by appropriately adjusting p2 , Q2 , R2 , A2 And b2 Value to adjust. For example, a2 With q2 When at least one of them is 0, there is no T3 silicon atom in the oligomer C, and only a linear or cyclic molecule is included. On the other hand, r2 With q2 When both are zero, only T2 silicon atoms are present in the oligomer C, and only cyclic molecules are included. [0121] The structure of the organopolysiloxane represented by formula (2), where the number of T2 silicon atoms is x2 Let the number of T3 silicon atoms be y2 , Set the number of T1 silicon atoms to z2 The ratio of T3 silicon atoms in the organopolysiloxane structure represented by formula (2) is expressed as [y2 / (x2 + y2 + z2 )]. [0122] [a2 × q2 ] / [(p2 + b2 × q2 ) + a2 × q2 + (r2 + q2 )] Equivalent to the existence ratio of T3 silicon atoms in the organic polysiloxane structure represented by formula (2): [y2 / (x2 + y2 + z2 )]. That is, p in equation (2)2 , Q2 , R2 , A2 And b2 It is appropriately adjusted so that the T3 silicon atom existence ratio falls within a range of 0 to 0.3. [0123] An oligomer C of a condensation type silicone resin which may include a raw material of a condensation type silicone resin hardened material included in the hardened material of this embodiment, has an organic polysiloxane structure represented by formula (2) Silicone resin, preferably the ratio of the content of T3 silicon atoms to the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms: [y2 / (x2 + y2 + z2 )] Is an oligomer having a weight average molecular weight of less than 1500 and a polystyrene conversion of 0 to 0.3. If the ratio of T3 silicon atoms is within this range, the ratio of T2 silicon atoms is: [x2 / (x2 + y2 + z2 )] And T1 silicon atom existence ratio: [z2 / (x2 + y2 + z2 )] Is not particularly limited. As the oligomer C, [y2 / (x2 + y2 + z2 )] Is in the range of 0 to 0.25, and more preferably in the range of 0.05 to 0.2. [0124] The oligomer C has a relatively low ratio of T3 silicon atoms, has a small branched structure, and most of them include linear or cyclic molecules. The oligomer C may be one containing only cyclic molecules, but preferably one containing a large number of linear molecules. As the oligomer C, for example, the presence ratio of T1 silicon atoms is preferred: [z2 / (x2 + y2 + z2 )] Is in the range of 0 to 0.80, more preferably in the range of 0.30 to 0.80, even more preferably in the range of 0.35 to 0.75, and particularly preferably in the range of 0.35 to 0.55. [0125] The content of the oligomer C contained in the condensation-type silicone resin is preferably 0.1% to 20% by mass, and more preferably 0.2% with respect to the total content of the all-silicone resin included in the condensation-type silicone resin. Mass% to 15% by mass, and even more preferably 0.5% to 10% by mass. [0126] The content of the oligomer C contained in the condensation-type silicone resin is preferably 0.1% to 20% by mass, and more preferably the content of the siloxane-resin A contained in the condensation-type silicone resin. 0.3 mass% to 10 mass%, and even more preferably 0.5 mass% to 5 mass%. [0127] The polystyrene-equivalent weight average molecular weight of the oligomer C is less than 1,500. When the polystyrene-equivalent weight average molecular weight of the oligomer C is too large, the crack resistance of the cured product of this embodiment may be insufficient. The polystyrene-equivalent weight average molecular weight of the oligomer C measured by GPC may be less than 1,000. The number of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms in one molecule of oligomer C is a resin having an organic polysiloxane structure represented by formula (2) so as to have a desired molecular weight. Modes are appropriately adjusted. In one embodiment, the sum of the number of T1 silicon atoms and the number of T2 silicon atoms and the number of T3 silicon atoms in the oligomer C1 molecule is preferably 2 or more. [0129] The oligomer C corresponds to each of the aforementioned structural units constituting the oligomer C, and an organic silicon compound having a functional group capable of generating a siloxane bond can be synthesized as a starting material. Here, the "functional group capable of generating a siloxane bond" means the same meaning as the above. Examples of the organic silicon compound corresponding to the structural unit represented by the formula (A3) include organic trihalosilane and organic trialkoxysilane. The oligomer C can be synthesized by hydrolyzing and condensing the organosilicon compound of such a starting material at a ratio corresponding to the existence ratio of each structural unit. [0130] In the synthesis of oligomer C, as a starting material, an organic silicon compound corresponding to the structural unit represented by the above formula (A1) and an organic silicon compound corresponding to the structural unit represented by the above formula (A1 ') are mixed. . When these organosilicon compounds are polymerized by hydrolysis and condensation reaction, the organosilicon compounds are bonded to the ends of the polymerization reaction to stop the polymerization reaction. [0131] The condensation-type silicone resin that is a raw material of the condensation-type silicone resin cured material included in the cured material of this embodiment, preferably includes the silicone resin A and an oligomer component. The oligomer component is preferably oligomer B or oligomer C. The condensation type silicone resin which is the raw material of the condensation type silicone resin hardened material included in the hardened material of this embodiment, preferably includes the silicone resin A and the oligomer B, and more preferably includes the silicone resin A, and Oligomer B, and oligomer C. [0132] Examples of other oligomer components include a silicone resin containing a structural unit represented by the above formula (A1) and a structural unit represented by the above formula (A2). The silicone resin may include a D body. (Solvent) 缩 The content of the T3 body is high in the condensation type silicone resin which is the raw material of the condensation type silicone resin hardened material included in the cured material of this embodiment. Therefore, in order to improve the operability, a solvent may be added to the condensation type silicone resin. A composition containing a condensation type silicone resin and a solvent is referred to as a "silicone resin composition". [0134] The solvent is not particularly limited as long as it can dissolve the silicone resin. As the solvent, for example, two or more solvents having different boiling points (hereinafter referred to as a solvent P and a solvent Q) can be used. [0135] As the solvent P, an organic solvent having a boiling point of less than 100 ° C is preferred. Specifically, preferred are ketone solvents such as acetone and methyl ethyl ketone; alcohol solvents such as methanol, ethanol, isopropyl alcohol, and n-propyl alcohol; hexane, cyclohexane, heptane, and benzene And other hydrocarbon-based solvents; methyl acetate, ethyl acetate and other acetate-based solvents; diethyl ether, tetrahydrofuran and other ether-based solvents. [0136] Among these, as the solvent P, alcohol solvents such as methanol, ethanol, isopropyl alcohol, and n-propyl alcohol are more preferable. [0137] The solvent Q is preferably an organic solvent having a boiling point of 100 ° C or higher. Specifically, a glycol ether solvent and a glycol ester solvent are preferred. Specific examples of the glycol ether solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, and ethylene glycol. Monohexyl ether, ethylene glycol monoethylhexyl ether, ethylene glycol monophenyl ether, ethylene glycol monobenzyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol Alcohol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, diethylene glycol monoethylhexyl ether, diethylene glycol monophenyl ether, diethylene glycol monobenzyl Ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monoisopropyl ether, propylene glycol monobutyl ether, propylene glycol monohexyl ether, propylene glycol monoethylhexyl ether, propylene glycol monophenyl ether, propylene glycol monobenzyl ether , Dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monoisopropyl ether, dipropylene glycol monobutyl ether, dipropylene glycol monohexyl ether, dipropylene glycol monoethylhexyl ether, dipropylene glycol monophenyl ether Dipropylene glycol monobenzyl ether. [0139] Specific examples of the glycol ester solvent include ethylene glycol monoethyl ether acetate, ethylene glycol monoisopropyl ether acetate, ethylene glycol monobutyl ether acetate, and ethylene glycol. Alcohol monohexyl ether acetate, ethylene glycol monoethylhexyl ether acetate, ethylene glycol monophenyl ether acetate, ethylene glycol monobenzyl ether acetate. [0140] Among these, as the solvent Q, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, and ethylene glycol monobutyl ether acetate are more preferable. [0141] (Silicon Resin Composition) 矽 A silicone resin composition is obtained by mixing a condensation-type silicone resin and a solvent as raw materials of the condensation-type silicone resin hardened material included in the cured product of this embodiment. The silicone resin composition may include a hardening catalyst, a filler, and other components described later. [0142] The viscosity of the silicone resin composition is at 25 ° C, usually 100 to 500,000 mPa ・ s, preferably 300 to 20,000 mPa ・ s, more preferably 400 to 15000 mPa ・ s, and even more preferably 500 to 10,000 mPa ・ s. When the viscosity of the silicone resin composition is within the above-mentioned range, when the wavelength conversion material is further included, the miscibility of the condensation silicone resin and the wavelength conversion material is good, and precipitation of the wavelength conversion material is suppressed. [0143] "Manufacturing Method of Silicone Resin Composition" The mixing method of the silicone resin A, oligomer B, and oligomer C is not particularly limited, and a known method used when mixing two or more kinds of polymers can be used. Either way. For example, silicone resin A, oligomer B, oligomer C, and other components, if necessary, may be dissolved in an organic solvent, and the resulting solution may be mixed. [0144] Since the silicone resin can be more uniformly mixed, and the stability of the prepared silicone resin composition can be improved, it is preferable to dissolve the silicone resin in an organic solvent with high volatility and solubility, and then The solvent is replaced by another solvent. [0145] Specifically, first, after adding siloxane resin A to a highly volatile and soluble organic solvent (for example, the “solvent P” described above), the mixture is heated to a temperature near the boiling point of the solvent P and stirred. , And the silicone resin A is dissolved in the solvent P. Secondly, after adding oligomer B, oligomer C, and other components if necessary, the oligomer B, oligomer C, and other components if necessary are dissolved in the same manner as described above. In solvent P. Secondly, after adding a solvent having a lower volatility than the solvent P (for example, the above-mentioned "solvent Q"), the solvent P can be replaced by the solvent P by heating the concentration of the solvent P to 1% or less. . In order to perform solvent substitution efficiently, heating distillation can be performed under reduced pressure. [0146] By performing solvent substitution, it is possible to remove residual solvents, water, etc. contained in each of silicone resin A, oligomer B, oligomer C, and other components. Therefore, by replacing with a solvent, the stability of the silicone resin composition can be improved. [0147] By adjusting the hardening conditions when the condensation-type silicone resin is hardened, the size of the uneven domain of the hardened material can be controlled. 0 [0148] In order to make the uneven domain size 硬化 of the hardened material 50 or more, it is preferable to set the temperature increase rate from 80 ° C to 125 ° C to 4 ° C / min or more, and more preferably 4.5 ° C / min or more. By increasing the temperature rise rate in this temperature range, due to the activation of molecular movements in the initial hardening period of the condensation-type silicone resin, condensation reactions occur simultaneously everywhere, increasing the distance between regions where the crosslinking points are dense. When the temperature increase rate from 80 ° C to 125 ° C is 1 ° C / minute or less, it is difficult to form a dense cross-linking region (domain structure) at the initial stage of curing of the condensation type silicone resin, and the uneven domain size is more likely to be larger than 50 °. small. [0149] In addition, by increasing the rate of temperature increase from 80 ° C to 125 ° C, the condensation type silicone resin that is cured when it reaches a temperature of 120 ° C or higher may be in a gel state and may have fluidity. In such a state, a larger domain is formed early because the domain formation reaction proceeds more effectively. The larger domain thus formed is immobilized in the later hardening reaction. [0150] The heating rate from 125 ° C to 180 ° C is preferably 0.1 ° C to 7 ° C / minute. By increasing the temperature in this temperature range, the size of the uneven region can be controlled. For example, if the temperature increase rate is 0.1 ° C / min, a reaction to form a region with denser cross-linking points tends to occur, so that the size of the uneven region can be set to 100 Å or more. For example, if the temperature increase rate is 5.5 ° C./minute, the hardening reaction is ended before the reaction for forming a region having a denser cross-linking point is completed, so that the size of the uneven region may be 50 Å or more and less than 100 Å. [0151] It is preferable to keep it in a temperature range of 150 ° C or more for 30 minutes or more. By sufficiently ensuring the holding time in this temperature range, the size of the uneven domain is further increased, and the fixing is performed in a state where the size of the uneven domain is large. The size of the uneven region is a large hardened product, which is stable in energy, and has high hardness, high fracture resistance, and high heat resistance. [0152] In addition, in order to control the speed of the hardening reaction, a hardening accelerator such as a phosphoric acid-based catalyst or a metal-based catalyst may be added to the silicone resin. [0153] (Hardening catalyst) As a hardening catalyst, for example, the structural unit represented by the above formula (A1), the structural unit represented by the above formula (A1 '), and the structural unit represented by the above formula (A2) is R2 In the case of an alkoxy group or a hydroxyl group, in order to promote the hydrolysis and condensation reaction, inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, formic acid, acetic acid, oxalic acid, citric acid, propionic acid, butyric acid, lactic acid, succinic acid, etc. Organic acids. [0154] As the curing catalyst, not only acidic compounds but also basic compounds can be used. Specifically, as the curing catalyst, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, and the like can be used. [0155] As a curing catalyst, an organometallic compound catalyst may also be used. Specifically, as the curing catalyst, an organometallic compound catalyst containing aluminum, zirconium, tin, titanium, or zinc can be used. [0156] Examples of the organometallic compound catalyst containing aluminum include aluminum triacetamate and aluminum triisopropoxide. [0157] Examples of the zirconium-containing organometallic compound catalyst include zirconium tetraacetylacetonate, zirconium tributoxyacetonate, zirconium dibutoxydiacetonate, zirconium tetra-n-propoxylate , Zirconium tetraisopropoxide, zirconium tetra-n-butoxide, zirconium acylate, zirconium tributoxide. [0158] Examples of the tin-containing organometallic compound catalyst include tetrabutyltin, monobutyltin trichloride, dibutyltin dichloride, dibutyltin oxide, tetraoctyltin, dioctyltin dichloride, and dioxane. Octyltin, tetramethyltin, dibutyltin laurate, dioctyltin laurate, bis (2-ethylhexanoate) tin, bis (neodecanoate) tin, di-n-butylbis ( Ethylhexyl maleate) tin, di-n-butylbis (2,4-pentanedione) tin, di-n-butylbutoxychlorotin, di-n-butyldiethoxytin , Di-n-butyltin dilaurate, tin dimethyl dineodecanoate. [0159] Examples of the titanium-containing organometallic compound catalyst include titanium tetraisopropoxide, titanium tetra-n-butoxide, butyl titanate dimer, tetraoctyl titanate, and titanium acetone acetone. , Octyl glycolate titanium, ethyl acetoacetate titanium. [0160] Examples of the zinc-containing organometallic compound catalyst include zinc triacetylacetonate. [0161] Among these, from the viewpoint of the transparency of the obtained cured product, a phosphate or phosphoric acid is preferable, and a phosphoric acid is more preferable. [0162] In order to add the curing catalyst to the silicone resin at a predetermined concentration, it is preferable to dilute the curing catalyst in water, an organic solvent, a silicone-based monomer, an alkoxysilane oligomer, and the like. Add silicone resin. [0163] The content of the curing catalyst can be appropriately adjusted by considering the temperature, time, and type of the curing reaction of the silicone resin. The content of the curing catalyst is preferably from 0.01 to 10 parts by mass, more preferably from 0.01 to 5 parts by mass, and particularly preferably from 0.1 to 1 part by mass based on 100 parts by mass of the condensation type silicone resin. The following. [0164] The curing catalyst may be added to the silicone resin in advance, or may be added to the silicone resin just before the curing reaction of the silicone resin is performed. [0165] (Filler) The hardened material of this embodiment can disperse the filler in a condensation type silicone resin hardened material. As the filler, a wavelength conversion material is preferred. [0166] Examples of the wavelength conversion material include phosphors and quantum dots. Examples of the phosphor include red phosphors that emit fluorescence in a wavelength range of 570 nm to 700 nm, green phosphors that emit fluorescence in a range of 490 nm to 570 nm, and blue that emits fluorescence in a range of 420 nm to 480 nm. Color phosphors, etc. [0167] "Red Phosphor" As a red phosphor, for example, it may be composed of ruptured particles having a red ruptured surface (Mg, Ca, Sr, Ba)2 Si5 N8 : Eu-activated alkaline-earth silicon nitride-based phosphor represented by Eu; composed of growing particles having an almost spherical shape as a regular crystal growth shape (Y, La, Gd, Lu)2 O2 S: Eu-activated rare earth oxychalcogenide-based phosphors represented by Eu. [0168] As another red phosphor, it contains an oxynitride or oxysulfide containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W, and Mo. The phosphors of both or both include phosphors containing an oxynitride having an α-silicon nitride structure in which a part or all of the Al element is replaced by a Ga element. [0169] Examples of other red phosphors include (La, Y)2 O2 S: Eu-activated oxysulfide phosphors such as Eu; Y (V, P) O4 : Eu, Y2 O3 : Eu-activated oxide phosphors such as Eu; (Ba, Sr, Ca, Mg)2 SiO4 : Eu, Mn, (Ba, Mg)2 SiO4 : Eu, Mn-activated silicate phosphors such as Eu, Mn; (Ca, Sr) S: Eu-activated sulfide phosphors such as Eu; YAlO3 : Eu-activated aluminate phosphors by Eu et al .; LiY9 (SiO4 )6 O2 : Eu, Ca2 Y8 (SiO4 )6 O2 : Eu, (Sr, Ba, Ca)3 SiO5 : Eu, Sr2 BaSiO5 : Eu-activated silicate phosphors by Eu et al. (Y, Gd)3 Al5 O12 : Ce, (Tb, Gd)3 Al5 O12 : Ce-activated aluminate phosphors by Ce et al. (Ca, Sr, Ba)2 Si5 N8 : Eu, (Mg, Ca, Sr, Ba) SiN2 : Eu, (Mg, Ca, Sr, Ba) AlSiN3 : Eu-activated nitride phosphors such as Eu; (Mg, Ca, Sr, Ba) AlSiN3 : Ce-activated nitride phosphors such as Ce; (Sr, Ca, Ba, Mg)10 (PO4 )6 Cl2 : Eu, Mn-activated halogenated phosphate phosphors; (Ba3 Mg) Si2 O8 : Eu, Mn, (Ba, Sr, Ca, Mg)3 (Zn, Mg) Si2 O8 : Eu, Mn-activated silicate phosphors such as Eu, Mn; 3.5MgO ・ 0.5MgF2 ・ GeO2 : Mn-activated germanate phosphors such as Mn; Eu-activated oxynitride phosphors such as α-silicon nitride; (Gd, Y, Lu, La)2 O3 : Eu, Bi activated oxide phosphors such as Eu, Bi; (Gd, Y, Lu, La)2 O2 S: Eu, Bi and other Eu, Bi activated oxysulfide phosphors; (Gd, Y, Lu, La) VO4 : Eu, Bi-activated vanadate phosphors such as Eu, Bi; SrY2 S4 : Eu, Ce and other Eu, Ce activated sulfide phosphors; CaLa2 S4 : Ce-activated sulfide phosphors such as Ce; (Ba, Sr, Ca) MgP2 O7 : Eu, Mn, (Sr, Ca, Ba, Mg, Zn)2 P2 O7 : Eu, Mn-activated phosphate phosphors such as Eu, Mn; (Y, Lu)2 WO6 : Eu, Mo activated tungstate phosphors such as Eu, Mo; (Ba, Sr, Ca)x Siy Nz : Eu, Ce (here, x, y, and z are integers of 1 or more) and other Eu, Ce activated nitride phosphors; (Ca, Sr, Ba, Mg)10 (PO4 )6 (F, Cl, Br, OH): Eu, Mn, etc., activated halophosphate phosphors; ((Y, Lu, Gd, Tb)1-x Scx Cey )2 (Ca, Mg)1-r (Mg, Zn)2 + r Sizq Geq O12 + δ Etc. Ce activates silicate phosphors. [0170] Examples of other red phosphors include anions having β-diketonate, β-diketone, aromatic carboxylic acid, Bronsted acid, and the like as ligands. Red organic phosphors and fluorene-based pigments (such as dibenzo {[f, f ']-4,4', 7,7'-tetraphenyl} diindeno [ 1,2,3-cd: 1 ', 2', 3'-lm] 苝), anthraquinone pigment, chelate pigment, azo pigment, quinacridone pigment, onion pigment, Isoindolline pigments, isoindolinone-based pigments, phthalocyanine-based pigments, triphenylmethane-based basic dyes, indanthrone-based pigments, indophenol-based pigments, cyan-based pigments, dioxins Azine pigment. [0171] Among red phosphors, the peak wavelength of fluorescent light emission is 580 nm or more, preferably 590 nm or more, and the peak wavelength of fluorescent light emission is 620 nm or less, preferably 610 nm or less, which is suitable as a red phosphor. Orange phosphor is used. Examples of such an orange phosphor include (Sr, Ba)3 SiO5 : Eu, (Sr, Mg)3 PO4 )2 : Sn2+ , SrCaAlSiN3 : Eu. [0172] "Yellow Phosphor" As the yellow phosphor, for example, oxide-based, nitride-based, oxynitride-based, sulfide-based, oxysulfide-based phosphors can be cited. Specifically, with RE3 M5 O12 : Ce (herein, RE represents at least one element selected from the group consisting of Y, Tb, Gd, Lu, and Sm, and M represents at least 1 selected from the group consisting of Al, Ga, and Sc Kind of element), M2 3 M3 2 M4 3 O12 : Ce (Here, M2 Represents a divalent metal element, M3 Represents a trivalent metal element, M4 A garnet-based phosphor with a garnet structure, such as a metal element of 4 valence;2 M5 O4 : Eu (here, AE represents at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Zn, M5 Represents at least one element selected from the group consisting of Si and Ge) orthosilicate-based phosphors such as those represented by the group; a part of oxygen atoms that are the constituent elements of these phosphors is replaced by nitrogen atoms Oxynitride phosphors; AAEAlSiN3 : Ce (here, AE represents at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Zn) and the like having CaAlSiN3 Ce-activated phosphors such as structured nitride-based phosphors. 017 [0173] Examples of other yellow phosphors include CaGa2 S4 : Eu (Ca, Sr) Ga2 S4 : Eu, (Ca, Sr) (Ga, Al)2 S4 : Sulfide-based phosphors such as Eu; Cax (Si, Al)12 (O, N)16 : Eu-activated phosphors such as oxynitride-based phosphors having a SiAlON structure such as Eu. [0174] "Green Phosphor" As the green phosphor, for example, (Mg, Ca, Sr, Ba) Si composed of ruptured particles having a ruptured surface can be cited.2 O2 N2 : Eu-activated alkaline-earth silicon oxynitride phosphors expressed by Eu; composed of ruptured particles with a ruptured surface (Ba, Ca, Sr, Mg)2 SiO4 : Activated alkaline earth silicate-based phosphors expressed by Eu. [0175] Examples of other green phosphors include Sr4 Al14 O25 : Eu, (Ba, Sr, Ca) Al2 O4 : Eu-activated aluminate phosphors by Eu et al .; (Sr, Ba) Al2 Si2 O8 : Eu, (Ba, Mg)2 SiO4 : Eu, (Ba, Sr, Ca, Mg)2 SiO4 : Eu, (Ba, Sr, Ca)2 (Mg, Zn) Si2 O7 : Eu-activated silicate phosphors by Eu et al .; Y2 SiO5 : Ce, Tb and other Ce, Tb activated silicate phosphors; Sr2 P2 O7 -Sr2 B2 O5 : Eu-activated borate phosphate phosphors; Sr2 Si3 O8 -2SrCl2 : Eu-activated halosilicate phosphors by Eu et al .; Zn2 SiO4 : Mn-activated silicate phosphors such as Mn; CeMgAl11 O19 : Tb, Y3 Al5 O12 : Tb and other Tb activated aluminate phosphors; Ca2 Y8 (SiO4 )6 O2 : Tb, La3 Ga5 SiO14 : Tb and other Tb activated silicate phosphors; (Sr, Ba, Ca) Ga2 S4 : Eu, Tb, Sm and other Eu, Tb, Sm activated thiogallate phosphors; Y3 (Al, Ga)5 O12 : Ce, (Y, Ga, Tb, La, Sm, Pr, Lu)3 (Al, Ga)5 O12 : Ce-activated aluminate phosphors such as Ce; Ca3 Sc2 Si3 O12 : Ce, Ca3 (Sc, Mg, Na, Li)2 Si3 O12 : Ce-activated silicate phosphors such as Ce; CaSc2 O4 : Ce-activated oxide phosphors such as Ce; SrSi2 O2 N2 : Eu, (Sr, Ba, Ca) Si2 O2 N2 : Eu-activated oxynitride phosphors such as Eu, Eu-activated β-silicon nitride, Eu-activated α-silicon nitride; BaMgAl10 O17 : Eu, Mn-activated aluminate phosphors such as Eu, Mn; SrAl2 O4 : Eu-activated aluminate phosphors by Eu et al. (La, Gd, Y)2 O2 S: Tb and other Tb-activated oxysulfide phosphors; LaPO4 : Ce, Tb activated phosphor phosphors such as Ce, Tb; ZnS: Cu, Al, ZnS: sulfide phosphors such as Cu, Au, Al; (Y, Ga, Lu, Sc, La) BO3 : Ce, Tb, Na2 Gd2 B2 O7 : Ce, Tb, (Ba, Sr)2 (Ca, Mg, Zn) B2 O6 : K, Ce, Tb and other Ce, Tb activated borate phosphors; Ca8 Mg (SiO4 )4 Cl2 : Eu, Mn and other activated halosilicate phosphors; (Sr, Ca, Ba) (Al, Ga, In)2 S4 : Eu-activated thioaluminate phosphors or thiogallate phosphors by Eu et al. (Ca, Sr)8 (Mg, Zn) (SiO4 )4 Cl2 : Eu, Mn and other Eu, Mn activated halosilicate phosphors. Examples of other green phosphors include a pyridine-xylylenediamine condensed derivative, a benzooxazinone-based, a quinazolinone-based, a coumarin-based, a quinoline-based, and naphthalene Formaldehyde fluorescent pigments such as naphthalic acid imide; organic phosphors such as fluorene complexes having hexyl salicylate as a ligand. [0177] "Blue Phosphor" As the blue phosphor, BaMgAl composed of growing particles having an almost hexagonal shape as a regular crystal growth shape can be cited10 O17 : Eu-activated barium-magnesium-aluminate-based phosphors represented by Eu; composed of growing particles having almost spherical shapes as regular crystal growth shapes (Ca, Sr, Ba)5 (PO4 )3 Cl: Europium-activated calcium halophosphate-based phosphor represented by Eu; composed of growing particles having almost cubic shape as a regular crystal growth shape (Ca, Sr, Ba)2 B5 O9 Cl: Eu-activated alkaline-earth chloroborate phosphors expressed by Eu; (Sr, Ca, Ba) Al composed of broken particles with a broken surface2 O4 : Eu or (Sr, Ca, Ba)4 Al1 4O25 : Eu-activated alkaline earth aluminate-based phosphors, represented by Eu. [0178] Examples of other blue phosphors include Sr2 P2 O7 : Sn-activated phosphate phosphors such as Sn; Sn4 Al14 O25 : Eu, BaMgAl10 O17 : Eu, BaAl8 O13 : Eu-activated aluminate phosphors by Eu et al .; SrGa2 S4 : Ce, CaGa2 S4 : Ce-activated thiogalatate phosphor; Ce and others; (Ba, Sr, Ca) MgAl10 O17 : Eu, BaMgAl10 O17 : Eu-activated aluminate phosphors such as Eu, Tb, Sm; (Ba, Sr, Ca) MgAl10 O17 : Eu, Mn-activated aluminate phosphors such as Eu, Mn; (Sr, Ca, Ba, Mg)10 (PO4 )6 Cl2 : Eu, (Ba, Sr, Ca)5 (PO4 )3 (Cl, F, Br, OH): Eu-activated halophosphate phosphors such as Eu, Mn, Sb; BaAl2 Si2 O8 : Eu, (Sr, Ba)3 MgSi2 O8 : Eu-activated silicate phosphors by Eu et al .; Sr2 P2 O7 : Eu-activated phosphate phosphors such as Eu; ZnS: Ag, ZnS: sulfide phosphors such as Ag, Al; Y2 SiO5 : Ce-activated silicate phosphors such as Ce; CaWO4 Tungstate phosphors, etc .; (Ba, Sr, Ca) BPO5 : Eu, Mn, (Sr, Ca)10 (PO4 )6 ・ NB2 O3 : Eu, 2SrO ・ 0.84P2 O5 ・ 0.16B2 O3 : Eu, Mn-activated borate phosphate phosphor; Eu2 Si3 O8 ・ 2SrCl2 : Eu-activated halosilicate phosphors. [0179] Examples of other blue phosphors include naphthalene dimethyl imine-based compounds, benzoxazole-based compounds, styryl-based compounds, coumarin-based compounds, pyrazoline-based compounds, and triazole-based compounds. Fluorescent pigments such as compounds; organic phosphors such as europium complexes. [0180] These types of phosphors can be used alone or in combination of two or more. [0181] "Quantum Dots" As quantum dots, for example, quantum dots of the InAs system, and quantum dots of the CdE (E = S, Se, Te) system (CdS)x Se1-x / ZnS, etc.). [0182] The content of the wavelength conversion material is usually 20% by mass or more and 95% by mass or less, more preferably 40% by mass or more and 95% by mass or less, with respect to the total content of the condensation type silicone resin hardened material and the wavelength conversion material. It is 50% by mass or more and 95% by mass or less, and more preferably 60% by mass or more and 95% by mass or less. [0183] In addition, the cured product of this embodiment may include a silica filler. Examples of the siloxane filler include a siloxane resin filler and a siloxane rubber filler. [0184] (Other components) The hardened product of this embodiment may contain additives such as inorganic particles and a silane coupling agent in addition to the condensation-type silicone resin hardened material and filler. [0185] (Inorganic Particles) Inorganic particles are contained in the hardened material of this embodiment, and can effectively excite the wavelength conversion material by scattering light. Moreover, in the manufacturing stage of the hardened | cured material of this embodiment, precipitation of a wavelength conversion material in the composition containing a silicone resin can be suppressed. [0186] Examples of the inorganic particles include oxides of silicon, titanium, zirconia, aluminum, iron, and zinc, carbon black, barium titanate, calcium silicate, and calcium carbonate, and silicon, titanium, and zirconia are preferred. , Aluminum and other oxides. [0187] Examples of the shape of the inorganic particles include a slightly spherical shape, a plate shape, a columnar shape, a needle shape, a whisker shape, and a fibrous shape. Since a more uniform composition is obtained, a slightly spherical shape is preferred. [0188] Although the inorganic particles included in the hardened material of this embodiment may be only one type or two or more types, it is preferably two or more types of inorganic particles having different particle sizes. Specifically, the hardened material of this embodiment is more preferably composed of inorganic particles having an average particle diameter of primary particles of 100 nm to 500 nm and inorganic particles having an average particle diameter of the same primary particles of less than 100 nm. By including two or more kinds of inorganic particles having different average particle diameters of primary particles, the excitation efficiency of the wavelength conversion material due to light scattering is improved, and the precipitation of the wavelength conversion material in the composition including the silicone resin is suppressed. [0189] The average particle diameter of the primary particles of the inorganic particles can be obtained, for example, by an image imaging method of directly observing the particles with an electron microscope or the like. Specifically, first, a liquid in which inorganic particles to be measured are dispersed in an arbitrary solvent is prepared, and the obtained dispersion is dropped on a glass slide or the like and dried. An inorganic particle can be directly dispersed on the adhesive surface of the adhesive tape, so that the inorganic particle can be attached. Secondly, the particles were directly observed by a scanning electron microscope (SEM) or a transmission electron microscope (TEM), and the size of the inorganic particles was calculated from the obtained shape, and the average particle diameter of the primary particles of the inorganic particles was obtained. [0190] The content of the inorganic particles is preferably 0.01 parts by mass or more and 100 parts by mass or less, and more preferably 0.1 parts by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the condensation-type silicone resin cured product. (Silane coupling agent) As the silane coupling agent, for example, it is preferable to have a material selected from the group consisting of vinyl, epoxy, styryl, methacryl, acryl, amine, urea, mercapto, and sulfur. Silane coupling agent based on at least one of the group consisting of physical groups and isocyanate groups. Among these, a coupling agent having an epoxy group or a mercapto group is preferred. Specific examples of the silane coupling agent include 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-mercaptopropyl Methylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane. [0193] When the composition containing a siloxane resin includes a silane coupling agent, although the silicon atom contained in the silane coupling agent is also used as29 The signal of Si-NMR is detected, but in this specification, in the calculation of the signal area of a composition including a siloxane resin, it becomes a signal that also includes a silane coupling agent. [0194] The content of the silane coupling agent is preferably 0.0001 mass parts or more and 1.0 mass parts or less, and more preferably 0.001 mass parts or more and 0.1 mass parts or less, based on 100 mass parts of the total content of the silicone resin. [0195] (Other additives) The hardened product of this embodiment may contain additives other than the materials described above. Examples of the additives other than the above-mentioned materials include a dispersant, a leveling agent, and an antifoaming agent. [0196] (Hardened material) 缩 The condensation-type silicone resin hardened material included in the hardened material of this embodiment preferably includes a structural unit represented by the above formula (A3). In addition, it is more preferable that the condensed silicone resin cured product further includes a group selected from the group consisting of a structural unit represented by the formula (A1), a structural unit represented by the formula (A1 '), and a structural unit represented by the formula (A2). One or more structural units in the group. [0197] The condensation type silicone resin hardened material included in the hardened material of this embodiment may further include the above formula (C1), the above formula (C1 '), the above formula (C2), the above formula (C3), or the above formula ( C4) represents the structural unit. [0198] The content of the T3 body in the condensation type silicone resin hardened material included in the hardened material of this embodiment is preferably 50 mol% or more relative to the total content of the entire structural unit of the condensation type silicone resin hardened material. . In other words, the content of T3 silicon atoms is preferably 50 mol% or more with respect to the total content of all silicon atoms in the condensation-type silicone resin hardened material. Furthermore, the content of T3 silicon atoms is more preferably 60 mol% or more, more preferably 70 mol% or more, and still more preferably 75 mols relative to the total content of all silicon atoms in the condensation type silicone resin hardened material. Ear%. [0199] In the case of a hardened material having a non-uniform domain size of 50 Å or more, when stress is applied, the stress can be dispersed throughout the hardened material. On the other hand, for hardened products with a smaller heterogeneous domain size than 50Å, the distribution of T3 silicon atoms is uniform. Therefore, when stress is applied, the stress cannot be dispersed throughout the hardened material, and cracks easily enter. [0200] A hardened product having a non-uniform domain size of 50 , or more has both high hardness and high fracture resistance. For example, even under continuous heating at 250 ° C, the stress due to heating can be dispersed throughout the hardened product. [0201] According to this embodiment, it is possible to provide a hardened material having both high hardness, high fracture resistance, and high heat resistance. [0202] <Wavelength Conversion Sheet> FIG. 2 is a schematic diagram showing a wavelength conversion sheet according to this embodiment. The wavelength conversion sheet 30 is formed by using a cured product including the condensation type silicone resin cured material 40 and a filler 50 which is a wavelength conversion material dispersed in the condensation type silicone resin cured material 40. Such a wavelength conversion sheet 30 is formed by forming the hardened material of the embodiment described above as a forming material to form a thin plate. [0203] The wavelength conversion sheet 30 may include a substrate on one surface. The substrate may be appropriately selected depending on the application of the wavelength conversion sheet, and examples thereof include metal substrates such as aluminum, and transparent substrates such as quartz and sapphire. [0204] The wavelength conversion sheet of this embodiment can be suitably used for wavelength conversion sheets such as LEDs, solar cells, semiconductor lasers, photodiodes, CCDs, and CMOS. In particular, the wavelength conversion sheet of this embodiment is excellent in heat resistance, and can be suitably used in a semiconductor laser light emitting portion expected to be used at a high temperature. [0205] The wavelength conversion sheet of this embodiment may include the inorganic particles described above. By containing inorganic particles in the wavelength conversion sheet, light scattering can excite the wavelength conversion material more effectively. In addition, in the manufacturing stage of the wavelength conversion sheet, it is possible to suppress the precipitation of the wavelength conversion material in the composition containing the silicone resin. (Film thickness) The thickness (film thickness) of the wavelength conversion sheet is preferably 10 μm or more because the wavelength conversion sheet can be manufactured stably. The thickness of the wavelength conversion sheet is preferably 1 mm or less, more preferably 500 μm or less, and still more preferably 200 μm or less from the viewpoint of improving the optical characteristics or heat resistance of the wavelength conversion sheet. With the thickness of the wavelength conversion sheet being 1 mm or less, the light absorption or light scattering caused by the silicone resin can be reduced. [0207] The film thickness of the wavelength conversion sheet can be determined, for example, by measuring the film thickness at a plurality of points of the wavelength conversion sheet using a micrometer and calculating the average value. For the plurality of points, for example, in a case where the shape of the wavelength conversion sheet is a quadrangle, a total of five points including one point in the center of the wavelength conversion sheet and four points in the corner of the wavelength conversion sheet are mentioned. [0208] The wavelength conversion sheet 30 may be formed on a supporting substrate. As the supporting substrate, a substrate made of a known metal, film, glass, ceramic, paper, or the like can be used. [0209] Specific examples of the material forming the supporting substrate include transparent inorganic oxide glass such as quartz glass, borosilicate glass, and sapphire; metals such as aluminum (including aluminum alloys), zinc, copper, and iron Board or foil; cellulose acetate, polyethylene terephthalate (PET), polyethylene, polyester, polyamide, polyimide, polyphenylene sulfide, polystyrene, polypropylene, poly Films of plastics such as carbonate, polyvinyl acetal, aramid, etc .; papers laminated with the above plastics; papers coated with the above plastics; papers laminated or evaporated with the above metals; plastics laminated or evaporated with the above metals film. Among these, an inorganic oxide glass or a metal plate is preferred. [0210] The thickness of the supporting substrate is preferably 30 μm or more, and more preferably 50 μm or more. When the thickness of the supporting substrate is 30 μm or more, it has sufficient strength to protect the shape of the wavelength conversion sheet. The thickness of the supporting substrate is preferably 5,000 μm or less, and more preferably 3,000 μm or less, from the viewpoint of economy. [0211] (Manufacturing Method of Wavelength Conversion Sheet) The manufacturing method of the wavelength conversion sheet of this embodiment will be described. [0212] First, a siloxane resin composition containing a wavelength conversion material in which a wavelength conversion material is dispersed in the above-mentioned siloxane resin composition (condensation type siloxane resin + solvent) is prepared. [0213] In order to improve the diffusion of the wavelength conversion material or the coating property of the silicone resin composition containing the wavelength conversion material, the silicone resin composition containing the wavelength conversion material may include additives such as inorganic particles and an auxiliary agent. [0214] After mixing these components so as to have a predetermined composition, a well-known stirring / kneading machine is used for homogeneous mixing and dispersion to obtain a silicone resin composition containing a wavelength conversion material. Examples of well-known mixing kneading kneaders include a homogenizer, a self-transition mixer, a 3-roller, a ball mill, a planetary ball mill, and a bead mill. After mixing or dispersion, if necessary, the silicone resin composition containing the wavelength conversion material may be defoamed under vacuum or reduced pressure. [0215] Next, the obtained silicone resin composition containing a wavelength conversion material is coated on a supporting substrate. The coating of the silicone resin composition containing the wavelength conversion material can be performed using a known coating device. Examples of known coating devices include a reverse roll coater, a knife coater, a slit die coater, a direct gravure coater, an offset gravure coater, a reverse roll coater, a knife coater, Kiss Coater, Natural Roller Coater, Air Knife Coater, Roller Blade Coater, Roller Roller Coater, Double Flow Coater, Bar Coater, Winding Bar Coater, Applicator , Dip coater, curtain coater, spin coater, knife coater. Among these, since the film thickness of the obtained molded body is likely to become uniform, a slit die coater or applicator is preferred. [0216] Examples of other coating methods include printing methods such as screen printing, gravure printing, and lithographic printing. Among these, screen printing is preferred from the viewpoint of simplicity. [0217] Next, the coating film formed on the support substrate is heat-hardened to obtain a wavelength conversion sheet. The coating film is heated using a natural convection oven, a ventilation oven, a vacuum oven, an inert oven, a hot plate, a hot press, an infrared heater, and the like. Among these, a blower oven is preferable from the viewpoint of productivity. [0218] Examples of heating conditions for the coating film include a method of heating at 40 ° C to 250 ° C for 5 minutes to 100 hours. The heating time is preferably 1 to 30 hours, more preferably 2 to 10 hours, and even more preferably 3 to 8 hours. With the heating time within this range, the solvent can be sufficiently removed, and at the same time, coloring during heating can be prevented. [0219] The coating film can be hardened by applying a silicone resin composition containing a wavelength conversion material on a supporting substrate and then placing it in an environment at a temperature of 250 ° C. or lower. The coating film is cured in an environment at a temperature of from ℃ to 200 ° C. In addition, when the coating film is hardened, in order to reduce the solvent or water existing in the siloxane resin composition containing the wavelength conversion material, and to control the condensation reaction rate of the siloxane resin A and the siloxane oligomer, it can be, for example, 40 The method is performed for 5 minutes to 30 minutes at 60 ° C to 60 ° C, followed by 10 minutes to 60 minutes at 60 ° C to 100 ° C, and then for 30 minutes to 5 hours at 140 ° C to 200 ° C, and the coating film is hardened stepwise. [0220] Regarding the hardening conditions of the coating film, by increasing the temperature rise rate from 80 ° C. to 125 ° C. to 4 ° C./min or more, it is possible to increase the size of the non-uniform domain of the cured product forming the wavelength conversion sheet Ξ. [0221] In addition, by increasing the temperature increase rate from 80 ° C to 125 ° C, the coating film may be in a gel state when it reaches a temperature of 120 ° C or higher, and may have fluidity. In this state, it is preferable to perform the formation reaction of the domain more effectively and form a larger domain early. [0222] The rate of temperature increase from 125 ° C to 180 ° C is preferably 0.1 ° C to 7 ° C / minute. By this temperature rise rate in the temperature range, the size of the non-uniform domain of the hardened material forming the wavelength conversion sheet can be controlled. For example, if the heating rate is 0.1 ° C./minute, since the reaction to form regions with denser cross-linking points tends to occur, the size of the non-uniform domain of the hardened product forming the wavelength conversion sheet can be set to 100 ° or more. For example, if the heating rate is 5.5 ° C / min, the curing reaction is terminated before the reaction to form a region with a denser cross-linking point is completed. Therefore, the size of the non-uniform domain of the hardened product forming the wavelength conversion sheet may be set to 50 ° or more. Under 100 满. [0223] It is preferable to keep it in a temperature range of 150 ° C or more for 30 minutes or more. By sufficiently ensuring the holding time in this temperature range, the uneven domain size of the hardened material forming the wavelength conversion sheet is further increased, and the uneven domain size is fixed to be large. [0224] Since the wavelength conversion sheet of this embodiment uses the hardened material of this embodiment as a forming material, it has both high hardness, high fracture resistance, and high heat resistance, and has become a highly reliable person. [0225] <Light-Emitting Device> FIG. 3 is a schematic diagram of the light-emitting device of this embodiment. The light emitting device 100 includes the above-mentioned wavelength conversion sheet 30 and a light source 60. [0226] As the light source 60, a known light source such as a mercury lamp or a semiconductor light emitting element can be used. In the light-emitting device of this embodiment, a light source that irradiates high-density energy such as high-brightness LEDs, semiconductor lasers, and a light source that emits high-energy ultraviolet rays with a wavelength of 400 nm or less and 300 nm or less such as UV-LEDs is suitable. The light source 60 includes a substrate 70 and a light emitting element 80 provided on one surface of the substrate 70. [0227] The wavelength conversion sheet 30 is disposed at a position where the light L1 emitted from the light source 60 is incident. [0228] In such a light emitting device 100, the light L1 emitted from the light source 60 is incident on the wavelength conversion sheet 30. In the wavelength conversion sheet 30, the filler 50 of the wavelength conversion material converts the light L1 into converted light L2 having a wavelength different from the light L1. The converted light L2 is emitted from the wavelength conversion sheet 30. [0229] FIG. 4 is a cross-sectional view showing the structure of a light-emitting device including the wavelength conversion sheet according to this embodiment. The light emitting device 1000 includes a substrate 110, a semiconductor laser element (light source) 120, a light guide 130, a wavelength conversion sheet 140, and a reflector 150. The wavelength conversion sheet 140 can use the above-mentioned constituents. [0230] The semiconductor laser element 120 is set on the substrate 110. [0231] The light guide 130 enters the laser light La emitted from the semiconductor laser element 120 inside, and guides the laser light La inside. The semiconductor laser element 120 is optically connected to one end of the light guide 130 and the wavelength conversion sheet 140 is optically connected to the other end. The light guide 130 has a hammer shape that gradually decreases in width from one end side to the other end side, and has a structure in which the laser light La emitted from the semiconductor laser element 120 is collected on the wavelength conversion sheet 140. [0232] The reflector 150 is a bowl-shaped element arranged around the wavelength conversion sheet 140, and the curved surface facing the wavelength conversion sheet 140 becomes a light reflection surface. The reflector 150 is configured to deflect the light emitted from the wavelength conversion sheet 140 toward the front of the device (the irradiation direction of the laser light La). [0233] The laser light La irradiated by the wavelength conversion sheet 140 is converted into white light Lb by the wavelength conversion material contained in the wavelength conversion sheet 140, and is output from the light emitting device 1000. [0234] Although the light emitting device 1000 includes one semiconductor laser element 120, it may include two or more. [0235] FIG. 5 is a cross-sectional view showing a modified example of the light-emitting device. In the description of FIG. 5 and the following, the same components as those described in FIG. 4 are assigned the same symbols as those in FIG. 4. [0236] The light-emitting device 1100 includes a plurality of substrates 110, a plurality of semiconductor laser elements (light sources) 120, a plurality of optical fibers 180, a light guide 130, a wavelength conversion sheet 140, a reflector 150, and a transparent substrate. Support 190. [0237] The optical fiber 180 enters the laser light La emitted from the semiconductor laser element 120 inside, and guides the laser light La inside. Semiconductor laser elements 120 are optically connected to one end of the plurality of optical fibers 180, respectively. In addition, a plurality of optical fibers 180 are bundled at the other end side, and are optically connected to the light guide 130 at the other end in a state of being bundled together. The light guide unit 130 enters the laser light La emitted from the semiconductor laser element 120 internally, and after the internal light guide laser light La is emitted toward the front of the device. The light guide 130 may have a function of collecting the laser light La emitted from the front of the device. [0238] The wavelength conversion sheet 140 is disposed in a state supported by the transparent support 190, is separated from the light guide portion 130, and is opposed to the light guide portion 130. The transparent support 190 is provided so as to cover the opening portion of the mirror 150 and is provided in front of the device. The transparent support 190 is made of a transparent material that does not deteriorate due to the heat generated during the use of the device, and is made of, for example, a glass plate. [0239] The laser light La radiated by the wavelength conversion sheet 140 is converted into white light Lb by the wavelength conversion material contained in the wavelength conversion sheet 140, and is output from the light emitting device 1100. [0240] The light emitting devices 1000 and 1100 separate the light source (semiconductor laser element 120) and the light emitting section (wavelength conversion sheet 140) as described above. This makes it easy to reduce the size of the light-emitting device or to improve the design. [0241] The light-emitting device configured as described above is highly reliable because it has a wavelength conversion sheet of this embodiment that has both high hardness, high fracture resistance, and high heat resistance. [0242] <Seal Element, Semiconductor Light-Emitting Device> FIG. 6 is a cross-sectional view of a semiconductor light-emitting device 200 according to this embodiment. The semiconductor light emitting device of this embodiment can also be used as a light source of the light emitting device of FIGS. 3 to 5. [0243] The semiconductor light emitting device 200 includes a substrate 210, a semiconductor light emitting element 220 disposed on the substrate, and a sealing element 230 that seals the semiconductor light emitting element 220. The sealing element 230 uses the above-mentioned hardened material as a forming material. The semiconductor light emitting element 220 is sealed by being covered with the substrate 210 and the sealing element 230 to isolate the outside air. [0244] As described above, the hardened material constituting the sealing element 230 has both high hardness, high fracture resistance, and high heat resistance. In addition, compared with the sealing portion made of quartz glass, the transmittance of UV light is the same, and the light extraction efficiency is improved and inexpensive. Therefore, the semiconductor light-emitting device having the sealing element 230 of this embodiment is less likely to be broken and has high reliability. [0245] In addition, since the hardened material constituting the sealing element 230 has a condensation type silicone resin hardened material as a constituent element, it is less likely to be deteriorated by UV light. Therefore, the semiconductor light emitting device 200 having the sealing element 230 and the semiconductor light emitting element 220 of the light source as the UV light source having a light emission wavelength of 400 nm or less and further 300 nm or less are not easily deteriorated and have high reliability. [0246] The semiconductor light emitting element 220 is not limited to those emitting UV light. The light emitting wavelength of the semiconductor light emitting device 220 may be in an ultraviolet region (for example, 10 to 400 nm), a visible light region (for example, more than 400 nm and less than 830 nm), or an infrared region (for example, 830 nm to 1000 nm). [0247] The sealing element configured as described above has a high reliability because the hardened material of this embodiment described above is used as a forming material. Furthermore, since the semiconductor light-emitting device configured as described above has a sealing element using the hardened material of the embodiment described above as a forming material, it is highly reliable. [0248] Although the preferred embodiments of the present invention will be described using the drawings 1 to 6, the embodiments of the present invention are not limited to these examples. The shapes, combinations, and the like of the constituent elements shown in the above examples can be variously changed according to design requirements and the like. [Examples] [0249] Although the present invention will be described more specifically with reference to the following examples, the present invention is not limited to the following examples. [0250] In this example, the obtained sample was evaluated or measured by the following method. [0251] <Crack Resistance> 1.2 1.2 g of a silicone resin composition was added to an aluminum cup with a diameter of 4 cm to harden it. The obtained hardened | cured material was visually evaluated for the presence or absence of a crack. [0252] <Strength> A test piece having a width of 10 mm, a length of 30 mm, and a thickness of 1 mm was prepared, and a load was applied at a rate of 2.0 mm / sec in the center of the test piece under the following conditions, and the load and fracture displacement of the test piece were measured. The number of trials (n number) was set to 5 and the arithmetic mean was determined to be the measurement result. [0253] The average value of the load (bending failure load, unit N) when the test piece was broken was defined as the bending strength. A test piece having a flexural strength of 20 MPa or more was determined to be good. [0254] The average value of the fracture displacement (amount of deformation at the time of failure, unit mm) at the time of fracture of the test piece was determined as the distortion at the time of fracture. A test piece having a distortion at the time of rupture of 3.0% or more was regarded as good. [0255] <Heat resistance> 加热 The condensation-type silicone resin hardened product (a disk-like shape having a diameter of 4 cm and a thickness of 500 μm) was heated in an oven at 250 ° C. Condensation-type silicone resin hardened | cured material before and after heating was evaluated for light transmittance and appearance (presence or absence of wrinkles and cracks) at a wavelength of 400 nm. [0256] <Shore Hardness> The Shore D hardness was measured under the following conditions for a condensation type silicone resin hardened product (a disk shape having a diameter of 4 cm and a thickness of 1500 μm). [0257] An automatic low-pressure loader (manufactured by Teclock Co., Ltd., model number GS-610) for a hardness tester, and a device equipped with a hardness meter (manufactured by Teclock Co., Ltd., model GS-720G, model D) was used as a measuring device. The hardness tester is a rubber and plastic hardness tester. Using this measuring device, Shore D hardness was measured at a falling rate of 1 mm / sec on a cured product of the condensation type silicone resin. The measurement was performed at 5 points, and the average value was calculated. [0258] A condensation type silicone resin cured product having a Shore D hardness of 70 or more was determined to be good. [0259] <Transmittance> Prepare a 500 μm thick condensation type silicone resin hardened product. About the obtained hardened | cured material, the transmittance with respect to the light of a wavelength of 400 nm was measured on the following conditions. Device name: JASCO V-670 UV-Vis near-infrared spectrophotometer integrating sphere unit (ISN-723 / B004861118) 瞄 Scanning speed (C): 1000nm / min Measuring wavelength: 200 ~ 800nm Data reading interval (L): 1.0nm [0260] A hardened material having a transmittance of 85% or more is considered good. [0261] <Gel Permeation Chromatography (GPC) Measurement> 测定 The sample (silicone resin) was dissolved in the eluent, and then filtered through a membrane filter having a pore size of 0.45 μm to prepare a measurement solution. With respect to the obtained prepared solution, the weight average molecular weight (Mw) in terms of standard polystyrene was measured under the following conditions. [Solids]29 Si-NMR> (i) A hardened product was produced, and the peak of the silicon atom belonging to the T body was measured for the obtained hardened product under the following conditions. Specifically, the presence of the peak in the region of -80 ppm to -40 ppm as the peak of the silicon atom attributed to the T body was confirmed. [0263] <Uneven field size> (Measurement conditions) [0264] First, the silica hardened product was pulverized using a freeze pulverizer. Examples of the freeze pulverizer include JFC-300 manufactured by Japan Industrial Co., Ltd. After the siloxane hardened body was left in liquid nitrogen for 10 minutes, it was pulverized for 15 minutes. FIG. 7 is a SEM photograph of the sintered silica hardened material. [0265] Next, 90 parts by mass of tetrahydrofuran was added to 10 parts by mass of the obtained pulverized product, and left to stand for 24 hours. The obtained swelled sample was put into a quartz cell and subjected to small-angle X-ray analysis. [0266] The swelling sample (sample) was irradiated with X-rays, and the small-angle X-ray scattering of the swelling sample was measured. The length from the swelling sample to the detector can be, for example, 106 cm, and the size of the direct beam stopper can be 2 mmφ. [0267] The correction of the scattering angle 2θ and the position of the direct beam is performed using, for example, individual peaks of the first (2θ = 1.513 °) and the second (2θ = 3.027 °) silver silver behenate. The measurable scattering angle 2θ ranges from 0.08 to 3 °. [0268] A small-angle X-ray small-angle scattering spectrum can be obtained by analyzing the measurement results using analysis software (SAXS Ver. 4.1.29) manufactured by Bruker AXS. In addition, the same measurement is carried out as described above, even for a control measurement using a quartz cell without a swelling sample. [0269] Using the measured values obtained from individual measurements, the wave number of X-rays used for the measurement of the small-angle X-ray scattering of the swelling sample is taken as the horizontal axis, and the measurement scattering measured from the small-angle X-ray scattering of the swelling sample is taken as the horizontal axis. The scattering intensity of the intensity-reduced control scattering is defined as the vertical axis, and a chart plotting the measured values of the small-angle X-ray scattering of the swelling sample is plotted. The obtained graph was fitted with the above formula (A) to obtain the non-uniform domain size Ξ. The range of fitting is with q = 0.022Å-1 ~ 0.13Å-1 Range. The initial value of fitting is 1Å <ξ <50Å, 1Å <Ξ <250Å. [Example 1] (1) The following siloxane resin A (Mw = 3500), low molecular weight siloxane (Mw <1000), and alkoxy siloxane oligomer (modified siloxane, Mw = 3400) All are "condensed silicone resins." The alkoxysilyl oligomer is equivalent to "oligomer B" in this specification. The low-molecular-weight silica is equivalent to "oligomer C" in this specification. [0271] The total area of the peaks of the alkoxysiloxy oligomers existing in a region having a weight average molecular weight of 7500 or more, the total of the total area of the peaks is 20% or more, and The total area of the peaks is more than 30% relative to the total area of the peaks. [0272] Table 1 shows the structural units included in the silicone resin A. The structural units included in the low-molecular-weight silicon oxygen are shown in Table 2. The alkoxysilyl oligomer is a resin composed of 95% or more of the structural units shown in Table 3. [0273] (silicone resin A) [0274](Low-molecular-weight silicon oxide)(Alkoxysilyl oligomer) (0278)[0279] The existence ratio of the structural units of each of the condensation-type silicone resins shown in Tables 1 to 3 is a value calculated from the measurement results of the solution NMR measured under the following conditions. [0280] <1 H-NMR measurement conditions > [0281] <29 Si-NMR measurement conditions > [0282] By adding 789.60 g of silicone resin A, 96.00 g of propyl acetate, and 314.40 g of isopropyl alcohol into the flask set in the oil bath, the silicone resin was stirred at 80 ° C. A is dissolved in a solvent. By adding the obtained solution, 8.47 g of low-molecular-weight silicon oxide and 75.08 g of alkoxy-silica oligomer were added, and the mixture was stirred for more than 1 hour to dissolve the low-molecular-weight silicon oxide and the alkoxy-silica oligomer in a solvent . (2) To the resulting solution, 274.49 g of 2-butoxyethyl acetate and 0.22 g of 3-glycidoxypropyltrimethoxysilane (silane coupling agent) were added. [0283] The obtained mixture was set in an evaporator, the temperature of the mixture was set to 85 ° C., and the pressure reduction degree of the evaporator was set to 2.0 kPa. Then, propyl acetate and isopropyl alcohol were distilled off to the mixture. The total concentration of propyl acetate and isopropyl alcohol in the mixture is 1% by mass or less. [0284] A silicone resin composition was obtained by adding 2 parts by mass of a curing catalyst (containing 15% by mass of phosphoric acid) to 100 parts by mass of the obtained mixture, followed by sufficient stirring. [0285] The obtained siloxane resin composition was gradually heated from room temperature (25 ° C) to 80 ° C, 125 ° C, and 180 ° C, and held at 80 ° C for 30 minutes, at 125 ° C for 30 minutes, and at 180 ° C. Hold for 60 minutes to perform the step curing. Specifically, the temperature was raised from room temperature (25 ° C) to 80 ° C at 1.4 ° C / min, and the temperature was maintained at 80 ° C for 30 minutes. Next, the temperature was raised to 125 ° C at 4.5 ° C / min, and the temperature was maintained at 125 ° C for 30 minutes. Next, the temperature was raised to 180 ° C at 5.5 ° C / min, and the temperature was maintained at 180 ° C for 60 minutes. Then, it was allowed to cool from 180 ° C to 25 ° C over 100 minutes to obtain a cured product. 0 [0286] In the obtained hardened solid29 Si-NMR measurement confirmed the peak of the silicon atom assigned to the T body. [0287] A SAXS profile was prepared from the results of the SAXS measurement for the obtained hardened material. The SAXS outline is shown in FIG. 8. In FIG. 8, the horizontal axis Q represents the wave number (unit: Å) of X-rays used for measurement of small-angle X-ray scattering.-1 ). The vertical axis I indicates the scattering intensity in which the measured scattering intensity measured from the small-angle X-ray scattering of the condensed silicone resin hardened body is reduced by the control scattering. From the prepared SAXS profile, it was confirmed that the size of the uneven region Ξ was 74Å. [0288] The obtained hardened product has no cracking and good cracking resistance. For the obtained hardened product, the bending strength was 35 MPa, and the bending strain was 5%, and the strength was good. The hardness of Shore D is 73, which is good for the obtained hardened material. The transmittance of the obtained hardened product is 92%, which is good. [0289] The obtained cured product was subjected to a heat resistance test at 250 ° C for 100 hours. In the appearance of the cured product after the heat resistance test, no occurrence of wrinkles or cracks was observed. The transmittance of the cured product after the heat resistance test was 92%, and the transparency was maintained. [Example 2] (1) The thermal curing conditions of the silicone resin composition in Example 1 were the same as in Example 1 except that the temperature rising rate from 125 ° C to 180 ° C was changed to 0.1 ° C / min. The same procedure was performed to obtain a cured product. 029 [0291] in the obtained hardened solid29 Si-NMR measurement confirmed the peak of the silicon atom assigned to the T body. [0292] A SAXS profile was prepared from the results of SAXS measurement for the obtained hardened material. The created SAXS outline is shown in FIG. 8. From the prepared SAXS contour, it was confirmed that the size of the uneven region 域 was 134Å. [0293] The obtained hardened product has no cracking and good cracking resistance. For the obtained hardened material, the bending strength is 28 MPa, the bending strain is 5%, and the strength is good. For the obtained hardened material, the Shore D hardness is 76, which is good. The transmittance of the obtained hardened product is 92%, which is good. [0294] The obtained cured product was subjected to a heat resistance test at 250 ° C for 100 hours. In the appearance of the cured product after the heat resistance test, no occurrence of wrinkles or cracks was observed. The transmittance of the cured product after the heat resistance test was 92%, and the transparency was maintained. [0293] [Example 3] Table 4 shows the structural units included in the following silicone resin B (Mw = 3500). The existence ratio of the structural unit of the silicone resin B shown in Table 4 is a value calculated based on the measurement results of the solution NMR described above. The silicone resin B corresponds to the "condensed silicone resin" in this specification. [0296] (silicone resin B) [0297][0298] 80 parts by mass of a silicone resin and 20 parts by mass of 2-butoxyethyl acetate were added to a flask, and the mixture was stirred to obtain a mixture. Then, 2 parts by mass of a curing catalyst (containing 15% by mass of phosphoric acid) was added to 100 parts by mass of the obtained mixture, and the mixture was sufficiently stirred to obtain a silicone resin composition. [0299] The obtained siloxane resin composition was heat-cured under the same conditions as the heat-curing conditions of the siloxane resin composition of Example 2 to obtain a cured product. [0300] In the obtained hardened solid29 Si-NMR measurement confirmed the peak of the silicon atom assigned to the T body. [0301] A SAXS profile was prepared from the results of SAXS measurement for the obtained hardened material. From the prepared SAXS profile, it was confirmed that the size of the uneven domain Ξ was 213Å. 030 [0302] The obtained hardened product has no cracks and good crack resistance. For the obtained hardened product, the bending strength is 35 MPa, the bending strain is 5.0%, and the strength is good. For the obtained hardened material, the Shore D hardness is 74, which is good. The transmittance of the obtained hardened product is 92%, which is good. [0303] The obtained cured product was subjected to a heat resistance test at 250 ° C for 100 hours. In the appearance of the cured product after the heat resistance test, no occurrence of wrinkles or cracks was observed. The transmittance of the cured product after the heat resistance test was 92%, and the transparency was maintained. [Comparative Example 1] 例 80 parts by mass of silicone resin B and 20 parts by mass of 2-butoxyethyl acetate were mixed by stirring to obtain a silicone resin composition. [0305] The obtained siloxane resin composition was hardened by heating it from room temperature to 150 ° C and holding it at 150 ° C for 5 hours. Specifically, the temperature was raised from room temperature (25 ° C) to 40 ° C at 3 ° C / min, and the temperature was maintained at 40 ° C for 10 minutes. Next, the temperature was raised to 150 ° C at 4 ° C / min, and the temperature was maintained at 150 ° C for 5 hours. Then, it was allowed to cool to room temperature over 2 hours to obtain a cured product. [0306] In the obtained hardened solid29 Si-NMR measurement confirmed the peak of the silicon atom assigned to the T body. [0307] A SAXS profile was prepared from the results of SAXS measurement for the obtained hardened material. The created SAXS outline is shown in FIG. 8. From the prepared SAXS profile, it was confirmed that the size of the uneven region Ξ was 36Å. [0308] The obtained hardened product was cracked, and the crack resistance was poor. The hardened product obtained is not a measurable value of flexural strength, Shore D hardness, and transmittance. [0309] From the above, it is understood that the cured product of the present invention is useful. [Industrial Applicability] 03 [0310] According to the present invention, it is possible to provide a hardened material having both high hardness, high fracture resistance, and high heat resistance. In addition, a wavelength conversion sheet, a light-emitting device, a sealing element, and a semiconductor light-emitting device using the cured material as a forming material can be provided.

[0311][0311]

10‧‧‧矽氧樹脂10‧‧‧ silicone resin

30‧‧‧波長轉換薄片30‧‧‧ Wavelength Conversion Sheet

40‧‧‧聚合體40‧‧‧polymer

50‧‧‧填料50‧‧‧ filler

60‧‧‧光源60‧‧‧light source

70、110、210‧‧‧基板70, 110, 210‧‧‧ substrate

80‧‧‧發光元件80‧‧‧Light-emitting element

100、1000、1100‧‧‧發光裝置100, 1000, 1100 ‧‧‧ light-emitting devices

120‧‧‧半導體雷射元件(光源)120‧‧‧semiconductor laser element (light source)

130‧‧‧導光部130‧‧‧light guide

140‧‧‧波長轉換薄片140‧‧‧wavelength conversion sheet

150‧‧‧反射鏡150‧‧‧mirror

160‧‧‧雷射光160‧‧‧laser light

170‧‧‧白色光170‧‧‧ white light

180‧‧‧光纖180‧‧‧ Optical Fiber

190‧‧‧透明支持體190‧‧‧Transparent support

200‧‧‧半導體發光裝置200‧‧‧Semiconductor light emitting device

220‧‧‧半導體發光元件220‧‧‧Semiconductor light emitting element

230‧‧‧密封用元件230‧‧‧sealing element

L1‧‧‧光L1‧‧‧light

L2‧‧‧轉換光L2‧‧‧Converted light

[0012]   [圖1] 係表示本實施形態之硬化物之膨潤樣品的狀態之示意圖。   [圖2] 係表示在本實施形態之波長轉換薄片的示意圖。   [圖3] 係表示本實施形態之發光裝置的示意圖。   [圖4] 係表示本實施形態之發光裝置的示意圖。   [圖5] 係表示本實施形態之發光裝置的示意圖。   [圖6] 係表示本實施形態之半導體發光裝置的斷面圖。   [圖7] 係在冷凍粉碎機粉碎後之矽氧硬化物的SEM照片。   [圖8] 係針對實施例及比較例之硬化物所作成之SAXS輪廓。[0012] FIG. 1 is a schematic diagram showing a state of a swelled sample of a hardened material of this embodiment. [Fig. 2] is a schematic diagram showing a wavelength conversion sheet in this embodiment. [Fig. 3] is a schematic diagram showing a light emitting device according to this embodiment. [Fig. 4] is a schematic diagram showing a light emitting device according to this embodiment. [Fig. 5] is a schematic diagram showing a light emitting device according to this embodiment. [Fig. 6] is a sectional view showing a semiconductor light emitting device according to this embodiment. [Fig. 7] This is a SEM photograph of a silica hardened product after being pulverized by a freeze pulverizer.图 [Fig. 8] It is a SAXS profile made for the hardened materials of Examples and Comparative Examples.

Claims (13)

一種硬化物,其係包含縮合型矽氧樹脂硬化物,滿足下述(1)及(2),   (1)在前述縮合型矽氧樹脂硬化物之固體29 Si-核磁共振光譜,存在歸屬於T體之矽原子的峰值;   (於此,所謂T體之矽原子,係意指與3個氧原子鍵結之矽原子)   (2)下述之不均勻域(Domain)大小為50Å以上,   (於此,所謂不均勻域尺寸,係指   將藉由將小角X光散射的測定所使用之X光的波數定為橫軸,將從以小角X光散射所測定之測定散射強度減少對照散射之散射強度定為縱軸,進行繪圖使前述縮合型矽氧樹脂硬化物含浸在四氫呋喃使其膨潤之試料的小角X光散射的測定值所得之圖表,以下述式(A)進行擬合所得之值)(於此,ξ表示網絡篩孔大小,Ξ表示不均勻域尺寸,I(q)表示散射強度,q表示波數,A及B表示擬合常數(Fitting constant))。A hardened material containing a condensation type silicone resin hardened material, which satisfies the following (1) and (2), (1) The solid 29 Si-NMR spectrum of the condensation type silicone resin hardened material, which exists and belongs to The peak of the silicon atom of the T body; (here, the so-called silicon atom of the T body means a silicon atom bonded to 3 oxygen atoms) (2) The size of the following non-uniform domain (Domain) is 50 Å or more, (Here, the size of the non-uniform domain refers to a case where the wave number of X-rays used for the measurement of small-angle X-ray scattering is determined as the horizontal axis, and the scattering intensity measured from the small-angle X-ray scattering is reduced. The scattering intensity of the scattering is determined on the vertical axis, and a graph is obtained by plotting the measured values of small-angle X-ray scattering of a sample in which the above-mentioned condensation-type silicone resin hardened material is impregnated with tetrahydrofuran, and fitted with the following formula (A) Value) (Here, ξ represents the size of the network sieve, Ξ represents the size of the non-uniform domain, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants.) 如請求項1之硬化物,其中,前述T體之矽原子相對於前述縮合型矽氧樹脂硬化物所包含之全矽原子的比例為50莫耳%以上。For example, the hardened product of claim 1, wherein the ratio of the silicon atom of the T body to the total silicon atom contained in the condensation-type silicone resin hardened product is 50 mol% or more. 如請求項2之硬化物,其中,T3矽原子相對於前述縮合型矽氧樹脂硬化物所包含之全矽原子的比例為50莫耳%以上,   (於此,所謂T3矽原子,係意指T體之矽原子當中,3個氧原子的全部與其他矽原子鍵結之矽原子)。For example, the hardened product of claim 2, wherein the ratio of the T3 silicon atom to the total silicon atoms contained in the condensation-type silicone resin hardened material is 50 mol% or more. Among the silicon atoms of the T body, all three oxygen atoms are bonded to other silicon atoms). 如請求項1~3中任一項之硬化物,其中,前述縮合型矽氧樹脂硬化物包含式(A1)、式(A1’)、式(A2)或式(A3)表示之構造單位,(式(A1)、式(A1’)、式(A2)及式(A3)中,   R1 表示碳數1~10之烷基或碳數6~10之芳基,   R2 表示碳數1~4之烷氧基或羥基,   複數個R1 及R2 可為分別相同亦可為相異)。The cured product according to any one of claims 1 to 3, wherein the condensation-type silicone resin cured product includes a structural unit represented by formula (A1), formula (A1 '), formula (A2), or formula (A3), (In formula (A1), formula (A1 '), formula (A2), and formula (A3), R 1 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and R 2 represents a carbon number 1 An alkoxy group or a hydroxyl group of ˜4, and a plurality of R 1 and R 2 may be the same as or different from each other). 如請求項4之硬化物,其中,前述R1 為甲基,   前述R2 為碳數1~3之烷氧基或羥基,複數個R2 可為相同亦可為相異。For example, the hardened product of claim 4, wherein the aforementioned R 1 is a methyl group, the aforementioned R 2 is an alkoxy group or a hydroxyl group having 1 to 3 carbon atoms, and a plurality of R 2 may be the same or different. 如請求項1~5中任一項之硬化物,其中,填料分散於前述縮合型矽氧樹脂硬化物中。The cured product according to any one of claims 1 to 5, wherein the filler is dispersed in the above-mentioned condensation-type silicone resin cured product. 如請求項6之硬化物,其中,前述填料為波長轉換材料。The cured product according to claim 6, wherein the filler is a wavelength conversion material. 如請求項7之硬化物,其中,前述波長轉換材料為螢光體。The cured product according to claim 7, wherein the wavelength conversion material is a phosphor. 一種波長轉換薄片,其係將如請求項7或8所記載之硬化物作為形成材料。A wavelength conversion sheet comprising a hardened material as described in claim 7 or 8 as a forming material. 一種發光裝置,其係具有射出光之光源、與   配置在入射從前述光源射出之光的位置之如請求項9所記載之波長轉換薄片。A light-emitting device includes a light source that emits light, and a wavelength conversion sheet according to claim 9 disposed at a position where the light emitted from the light source is incident. 一種密封用元件,其係將如請求項1~8中任一項之硬化物作為形成材料。A sealing element using a hardened material according to any one of claims 1 to 8 as a forming material. 一種半導體發光裝置,其係具有基材、與   配置在前述基材之半導體發光元件、與   密封前述半導體發光元件之至少一部分之密封用元件,前述密封用元件為如請求項11所記載之密封用元件。A semiconductor light-emitting device comprising a base material, a semiconductor light-emitting element arranged on the base material, and a sealing element that seals at least a part of the semiconductor light-emitting element. The sealing element is for sealing according to claim 11. element. 如請求項12之半導體發光裝置,其中,前述半導體發光元件的發光波長為400nm以下。The semiconductor light-emitting device according to claim 12, wherein the light-emitting wavelength of the semiconductor light-emitting element is 400 nm or less.
TW106130270A 2016-09-07 2017-09-05 Hardened material, wavelength conversion sheet, light emitting device, sealing element, and semiconductor light emitting device TW201815899A (en)

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