TW201800138A - Piezoelectric film filter - Google Patents
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- TW201800138A TW201800138A TW105120301A TW105120301A TW201800138A TW 201800138 A TW201800138 A TW 201800138A TW 105120301 A TW105120301 A TW 105120301A TW 105120301 A TW105120301 A TW 105120301A TW 201800138 A TW201800138 A TW 201800138A
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- 239000002245 particle Substances 0.000 claims abstract description 31
- 238000001914 filtration Methods 0.000 claims abstract description 30
- 239000012530 fluid Substances 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims description 114
- 239000010409 thin film Substances 0.000 claims description 58
- 230000008859 change Effects 0.000 claims description 18
- 239000002351 wastewater Substances 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims 2
- 230000010287 polarization Effects 0.000 abstract description 10
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000108 ultra-filtration Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000011001 backwashing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000010842 industrial wastewater Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 polydifluoroethylene Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000004075 wastewater filtration Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D61/00—Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis or ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D63/00—Apparatus in general for separation processes using semi-permeable membranes
- B01D63/08—Flat membrane modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D63/00—Apparatus in general for separation processes using semi-permeable membranes
- B01D63/10—Spiral-wound membrane modules
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D65/00—Accessories or auxiliary operations, in general, for separation processes or apparatus using semi-permeable membranes
- B01D65/08—Prevention of membrane fouling or of concentration polarisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/06—Organic material
- B01D71/30—Polyalkenyl halides
- B01D71/32—Polyalkenyl halides containing fluorine atoms
- B01D71/34—Polyvinylidene fluoride
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
- C02F1/444—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by ultrafiltration or microfiltration
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/48—Treatment of water, waste water, or sewage with magnetic or electric fields
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2311/00—Details relating to membrane separation process operations and control
- B01D2311/26—Further operations combined with membrane separation processes
- B01D2311/2603—Application of an electric field, different from the potential difference across the membrane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2313/00—Details relating to membrane modules or apparatus
- B01D2313/34—Energy carriers
- B01D2313/345—Electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2313/00—Details relating to membrane modules or apparatus
- B01D2313/36—Energy sources
- B01D2313/365—Electrical sources
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2321/00—Details relating to membrane cleaning, regeneration, sterilization or to the prevention of fouling
- B01D2321/20—By influencing the flow
- B01D2321/2033—By influencing the flow dynamically
- B01D2321/2058—By influencing the flow dynamically by vibration of the membrane, e.g. with an actuator
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
- C02F2209/10—Solids, e.g. total solids [TS], total suspended solids [TSS] or volatile solids [VS]
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2303/00—Specific treatment goals
- C02F2303/14—Maintenance of water treatment installations
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Water Supply & Treatment (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Environmental & Geological Engineering (AREA)
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Abstract
Description
本發明係關於一種過濾裝置，特別是一種利用壓電薄膜通電以過濾流體中的雜質之壓電薄膜過濾裝置。The invention relates to a filtering device, in particular to a piezoelectric thin film filtering device that uses a piezoelectric film to energize to filter impurities in a fluid.
水，雖覆蓋了地球約百分之七十一的面積，其中不可以直接使用的海水占了約百分之九十七，因此，人們可以直接使用的水資源可說是少之又少，尤其是對於許多島嶼型國家，因為地形關係不易留住可使用的水資源，作好水資源的管理、如何省水以及重複使用被視為相當重要的課題。Although water covers about 71% of the earth ’s area, seawater that cannot be used directly accounts for about 97%. Therefore, people can directly use water resources. Especially for many island-type countries, it is not easy to retain usable water resources because of the topographical relationship, and it is considered a very important issue to manage water resources, how to save water and reuse them.
在台灣，高科技產業的形成與半導體產業具有相當大的關聯性，科學園區中具有數個半導體工廠，例如，每日每間半導體所需耗費的廢水超過七百立方公尺以上，尤其是半導體製程中的化學機研磨(Chemical-Mechanical Polish，CMP)所使用研磨液、酸蝕刻(Etching)中清洗化學液後的混和液以及保養機台所需要的高純潔淨水(DIW)等，造成工業會產生大量的廢水。In Taiwan, the formation of high-tech industries has a considerable correlation with the semiconductor industry. There are several semiconductor factories in the science park. For example, the daily waste water required for each semiconductor exceeds 700 cubic meters, especially semiconductors. The polishing liquid used in chemical-mechanical polishing (CMP) in the manufacturing process, the mixed liquid after cleaning the chemical liquid in acid etching (Etching), and the high-purity clean water (DIW) required to maintain the machine, etc. A large amount of wastewater is generated.
因此，有許多用於過濾工業廢水的技術及設備產生，例如，目前許多半導體廠商回收CMP廢水的方式，採用混凝沉澱後，再利用超過濾(Ultra-Filtration，UF)膜來處理CMP廢水中的各種微粒，以達到次級用水的標準來回收。但，因為CMP廢水的懸浮物極為細小，在超過濾膜的過濾製程上，常因為堵塞而進行線上清洗、反洗或是需要停機以進行更換膜管，而降低水的回收效果，進而增加處理上的成本。Therefore, there are many technologies and equipment for filtering industrial wastewater. For example, many semiconductor manufacturers currently recycle CMP wastewater by using coagulation sedimentation and then using ultra-filtration (UF) membranes to treat CMP wastewater. The various particles are recycled to meet the secondary water standard. However, because the suspended matter of the CMP wastewater is extremely small, in the filtration process of the ultrafiltration membrane, line cleaning, backwashing or shutdown is required to replace the membrane tube because of clogging, which reduces the water recovery effect and increases the treatment. Cost.
因此，本發明有鑑於上述的困擾，提出了一種壓電薄膜過濾裝置，可以有效改善以及提高廢水過濾的處理效率，並降低處理回收的成本。Therefore, in view of the above-mentioned problems, the present invention proposes a piezoelectric thin-film filtering device, which can effectively improve and improve the treatment efficiency of wastewater filtration and reduce the cost of treatment and recycling.
本發明的主要目的係在提供一種壓電薄膜過濾裝置，在壓電薄膜進行過濾時，同時對壓電薄膜施予電壓，因逆壓電效應而產生形變，斷開電壓時，薄膜又恢復原狀，藉此反覆的進行以使壓電薄膜產生振動。當壓電薄膜振動時，壓電薄膜表面形成的濃度極化區會因為壓電薄膜的表面粗糙度增加，而使流場的條件改變，在靠近壓電薄膜表面處，產生一流速劇變進而產生一剪力面，而使濃度極化區的厚度變薄，同時由上端流速較快的地方，將原本貼附在濃度極化區的微粒帶走，而增加了壓電薄膜過濾時純淨液體的流通量。因此，當流體流進壓電薄膜過濾裝置時，可以透過作為超過濾膜的壓電薄膜過濾流體中的雜質或是較大的粒子，主要將較純淨的液體過濾出去，藉由壓電薄膜的快速振動以將壓電薄膜上過濾液體的孔洞上的雜質或粒子掃開，以避免液體過濾的通量變小及過濾速度變慢。The main object of the present invention is to provide a piezoelectric thin film filtering device. When the piezoelectric thin film is filtered, a voltage is applied to the piezoelectric thin film at the same time, and deformation occurs due to the inverse piezoelectric effect. When the voltage is turned off, the thin film returns to its original state. In this way, the piezoelectric film is vibrated repeatedly. When the piezoelectric film vibrates, the concentration polarization region formed on the surface of the piezoelectric film will change the conditions of the flow field because the surface roughness of the piezoelectric film increases. Near the surface of the piezoelectric film, a sudden change in flow velocity will occur A shear surface, which reduces the thickness of the concentration polarization region, and removes the particles originally attached to the concentration polarization region from the place where the upper end has a faster flow velocity, thereby increasing the Circulation. Therefore, when the fluid flows into the piezoelectric thin film filtering device, impurities or larger particles in the fluid can be filtered through the piezoelectric thin film as an ultrafiltration membrane, and the purer liquid is mainly filtered out. Quickly vibrate to sweep away impurities or particles from the pores of the filtered liquid on the piezoelectric film, so as to avoid the flux of the liquid filtering to become smaller and the filtering speed to be slower.
本發明的另一目的係在提供一種壓電薄膜過濾裝置，當施予電壓時，可以依照需過濾流體中粒子的電荷特性，調整壓電薄膜表面的電極，使壓電薄膜表面帶有電荷，並使壓電薄膜表面與流體中粒子之電性相同，利用庫倫力的因素將待相同電荷的粒子推斥而遠離壓電薄膜表面，形成相斥的情形，並且利用上述將原本貼附在濃度極化區的微粒帶走的同時，一併將被推斥的粒子帶走，減少因擴散因素而流到過濾液中，以增加過濾液的濃度。因此，流體中的懸浮粒子則不易沉積在壓電薄膜的表面，以降低粒子沉積而形成堵塞的情形、提高壓電薄膜的通量、減少壓電薄膜進行線上清洗及反洗的次數以及因通量提高而降低單位產水的成本。Another object of the present invention is to provide a piezoelectric thin film filtering device. When a voltage is applied, the electrodes on the surface of the piezoelectric thin film can be adjusted according to the charge characteristics of the particles in the fluid to be filtered, so that the surface of the piezoelectric thin film is charged. Make the surface of the piezoelectric film the same as the electrical properties of the particles in the fluid. Use the Coulomb force to repel particles to be charged with the same distance away from the surface of the piezoelectric film to form a repulsive situation. Use the above to attach the original film to the concentration. At the same time as the particles in the polarization zone are taken away, the repelled particles are also taken away, reducing the flow into the filtration fluid due to diffusion factors, so as to increase the concentration of the filtration fluid. Therefore, suspended particles in the fluid are not easily deposited on the surface of the piezoelectric thin film, in order to reduce particle deposition and blockage, increase the flux of the piezoelectric thin film, reduce the number of online cleaning and backwashing of the piezoelectric thin film, and Increase the amount and reduce the cost of unit water production.
為了達到上述的目的，本發明提供一種壓電薄膜過濾裝置，包含有一殼體、至少一壓電薄膜及一電源供應器，壓電薄膜裝設在殼體中，壓電薄膜會過濾流通於殼體中的流體中的雜質，及電源供應器電性連接壓電薄膜的二面，電源供應器分別提供電壓至壓電薄膜的二面，以使壓電薄膜產生形狀變化，當電源供應器停止提供電壓時，壓電薄膜就會恢復原狀，電源供應器則可以反覆的開啟及關閉以傳輸電壓並使壓電薄膜產生振動，並使壓電薄膜與流體中粒子的電性相同，以排開流體中的各種粒子。In order to achieve the above object, the present invention provides a piezoelectric thin film filtering device, which includes a housing, at least one piezoelectric thin film, and a power supply. The piezoelectric thin film is installed in the housing, and the piezoelectric thin film filters and flows through the housing. Impurities in the fluid in the body, and the power supply is electrically connected to the two sides of the piezoelectric film. The power supply supplies voltage to the two sides of the piezoelectric film to change the shape of the piezoelectric film. When the power supply stops When the voltage is applied, the piezoelectric film will return to its original state, and the power supply can be turned on and off repeatedly to transmit the voltage and cause the piezoelectric film to vibrate, and make the piezoelectric film and the particles in the fluid have the same electrical properties to discharge. Various particles in the fluid.
在本發明中壓電薄膜的二面都設有一導電體，當壓電薄膜接收電壓時，則藉由導電體使壓電薄膜產生形變，進而使壓電薄膜產生振動。In the present invention, a conductive body is provided on both sides of the piezoelectric thin film. When the piezoelectric thin film receives a voltage, the conductive thin film is deformed by the conductive body, and the piezoelectric thin film is vibrated.
在本發明中壓電薄膜產生形變的方式，往壓電薄膜的長度或是寬度之方向延伸，而使壓電薄膜變薄；往長度或是寬度的方向收縮，而使壓電薄膜變厚；甚或是使壓電薄膜產生彎曲狀。且電源供應器也可藉著改變電壓的極性，以使壓電薄膜進行延伸或收縮。In the present invention, the piezoelectric film is deformed in such a way that it extends toward the length or width of the piezoelectric film to make the piezoelectric film thin; it shrinks toward the length or width to make the piezoelectric film thicker; It even bends the piezoelectric film. And the power supply can also change the polarity of the voltage to extend or contract the piezoelectric film.
底下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。In the following, detailed descriptions will be made through specific embodiments in conjunction with the accompanying drawings to make it easier to understand the purpose, technical content, features and effects of the present invention.
本發明係利用聚二氟乙烯(PVDF)壓電薄膜作為過濾用的超過濾膜，並利用壓電薄膜具有逆壓電的效應，於壓電薄膜兩面通電以造成膜的形變，進而使其振動增加掃流速度，且同時因為通電產生電場，與流體中需過濾的粒子因電性相斥以產生推斥的作用，並可將需過濾的粒子暫時不附著在壓電薄膜過濾液體的孔洞上，以使孔洞堵塞，較純淨的液體則會可以先行過濾，提高過濾的速度及通量。The present invention uses a polydifluoroethylene (PVDF) piezoelectric film as an ultrafiltration membrane for filtering, and uses the piezoelectric film to have an inverse piezoelectric effect. Electricity is applied to both sides of the piezoelectric film to cause deformation of the film and further cause it to vibrate. Increasing the sweeping speed, and at the same time generating an electric field due to the electrification, the particles in the fluid are electrically repelled to produce a repulsive effect, and the particles to be filtered are temporarily not attached to the holes of the piezoelectric thin film filtering liquid In order to block the pores, the more pure liquid can be filtered first, improving the filtering speed and throughput.
首先，請先參照本發明第一圖所示，一種壓電薄膜過濾裝置10包含一殼體12，在本實施例中殼體12係為圓柱形的殼體，但本發明並不限制殼體12的形狀或樣式；殼體12中裝設有至少一壓電薄膜14，其係為PVDF壓電薄膜，本實施例係以兩片壓電薄膜14為例，壓電薄膜14係可捲曲環設在殼體12中，而兩片相鄰的壓電薄膜14之間可以再插設一間隔元件18；一電源供應器16係電性連接兩片壓電薄膜14的二面，以分別提供電壓至兩片壓電薄膜14的二面，在本實施例中，電壓係為直流電。First, please refer to the first figure of the present invention. A piezoelectric membrane filter device 10 includes a casing 12. In this embodiment, the casing 12 is a cylindrical casing. However, the present invention does not limit the casing. The shape or pattern of 12; at least one piezoelectric film 14 is installed in the casing 12, which is a PVDF piezoelectric film. This embodiment uses two piezoelectric films 14 as an example. The piezoelectric film 14 is a rollable ring. It is set in the housing 12, and a spacer element 18 can be inserted between two adjacent piezoelectric films 14; a power supply 16 is electrically connected to the two sides of the two piezoelectric films 14 to provide separate The voltage is applied to both sides of the two piezoelectric thin films 14. In this embodiment, the voltage is a direct current.
承接上段，本段將更詳細說明壓電薄膜14的結構，並請同時參照本發明第二圖、第三a圖及第三b圖所示，壓電薄膜14的二面上皆更設有一導電體142及電源接點144。請同時再參照第一圖，壓電薄膜14的二個面上的電源接點144會分別電性連接電源供應器16的正極及負極，以使壓電薄膜14接收電源供應器16所提供之電壓。Continuing from the previous paragraph, this paragraph will explain the structure of the piezoelectric film 14 in more detail. Please also refer to the second, third a, and third b drawings of the present invention. The two sides of the piezoelectric film 14 are further provided with one The conductor 142 and the power contact 144. Please refer to the first figure at the same time. The power contacts 144 on the two faces of the piezoelectric film 14 are electrically connected to the positive and negative electrodes of the power supply 16 respectively, so that the piezoelectric film 14 receives the power provided by the power supply 16. Voltage.
說明完本發明的結構後，接著詳細說明本發明的使用方式，請同時參照本發明第一圖所示。本發明的壓電薄膜過濾裝置10可以過濾流體，例如一般工業廢水中的含微粒之廢水、薄膜生物反應器之廢水或化學機研磨(Chemical-Mechanical Polishing，CMP)廢水等，流體可以如第一圖中箭號所示的方向自殼體12中流通，當流進殼體12時，會再通過壓電薄膜14，此時壓電薄膜14可以過濾流體中的雜質或懸浮粒子等，使超過壓電薄膜14中過濾孔洞大的雜質或懸浮粒子被隔絕，而過濾出較為純淨的液體，本實施例中不限制壓電薄膜14的過濾孔洞的孔徑，可以依照使用者的需求作調整。此時，電源供應器16提供電壓至壓電薄膜14，由於壓電薄膜14具有逆壓電的效應，當壓電薄膜14的表面被施加電壓時，會因為電場作用時電偶極矩被拉長而產生變化。因此，當壓電薄膜14被電源供應器16施加電壓時，壓電薄膜14會因為表面上的導電體142而產生形變，例如往壓電薄膜14的長度或是寬度之方向延伸而變薄、往壓電薄膜14的長度或寬度之方向收縮而變厚或是使壓電薄膜14產生彎曲狀；當電源供應器16停止提供電壓時，壓電薄膜14則會恢復原狀。因此，使用者可以藉由電源供應器16以反覆的開啟及關閉以傳輸電壓，並使壓電薄膜14產生振動，開關電壓的動作越是頻繁快速，壓電薄膜14的振動速度亦會跟著加快，且使用者可以經由電源供應器16改變電壓的極性以使壓電薄膜14進行延伸或是收縮，例如，當傳輸正電至壓電薄膜14之特定一面時會進行延伸的形變，反覆的開關電壓會造成壓電薄膜14快速地進行延伸及恢復原狀的振動，此時把傳輸到壓電薄膜14之特定一面的電壓改為負電時，則會改變壓電薄膜14形變的變化方式，而變成收縮的形變。使用者可以藉由改變電壓的供輸以及電壓的極性，來改變壓電薄膜14的振動變化，並藉由此一振動變化使原本平整的壓電薄膜14產生不平整的表面，當流體經過不平整的表面時會產生湍流，以減緩壓電薄膜14表面的濃度極化之形成，壓電薄膜14表面形成的濃度極化區會因為壓電薄膜14表面的粗糙度增加，而使流場的條件改變，在靠近壓電薄膜14表面處，產生一流速劇變進而產生一剪力面，而使濃度極化區的厚度變薄，同時由上端流速較快的地方，將原本貼附在濃度極化區的微粒帶走，而增加了壓電薄膜14過濾時純淨液體的流通量。After explaining the structure of the present invention, then the use mode of the present invention will be described in detail. Please also refer to the first figure of the present invention. The piezoelectric thin film filtering device 10 of the present invention can filter fluids, such as particulate-containing wastewater in general industrial wastewater, wastewater from a thin-film bioreactor, or chemical-mechanical polishing (CMP) wastewater. The direction indicated by the arrow in the figure flows from the casing 12. When it flows into the casing 12, it will pass through the piezoelectric film 14. At this time, the piezoelectric film 14 can filter impurities or suspended particles in the fluid to exceed Impurities or suspended particles with large filter holes in the piezoelectric film 14 are isolated, and a relatively pure liquid is filtered. In this embodiment, the diameter of the filter holes of the piezoelectric film 14 is not limited, and can be adjusted according to user needs. At this time, the power supply 16 provides a voltage to the piezoelectric thin film 14. Because the piezoelectric thin film 14 has an inverse piezoelectric effect, when a voltage is applied to the surface of the piezoelectric thin film 14, the electric dipole moment is pulled due to an electric field. Change over time. Therefore, when a voltage is applied to the piezoelectric film 14 by the power supply 16, the piezoelectric film 14 will be deformed by the conductive body 142 on the surface, for example, it will become thinner by extending in the length or width direction of the piezoelectric film 14, The piezoelectric film 14 shrinks toward the length or width of the piezoelectric film 14 to become thick or to cause the piezoelectric film 14 to be curved. When the power supply 16 stops supplying voltage, the piezoelectric film 14 returns to its original state. Therefore, the user can repeatedly turn on and off the power supply 16 to transmit voltage and cause the piezoelectric film 14 to vibrate. The more frequent and fast the switching voltage action, the faster the vibration speed of the piezoelectric film 14 will be accelerated. And the user can change the polarity of the voltage through the power supply 16 to make the piezoelectric film 14 extend or contract. For example, when transmitting positive electricity to a specific side of the piezoelectric film 14, it will be deformed by extension, repeated switching. The voltage will cause the piezoelectric film 14 to rapidly stretch and recover to its original state. At this time, when the voltage transmitted to a specific side of the piezoelectric film 14 is changed to negative electricity, the deformation mode of the piezoelectric film 14 will be changed and become Shrinkage deformation. The user can change the vibration variation of the piezoelectric film 14 by changing the supply and transmission of voltage and the polarity of the voltage, and by this vibration change, the originally flat piezoelectric film 14 has an uneven surface. Turbulent flow occurs on a flat surface to slow down the formation of concentration polarization on the surface of the piezoelectric film 14. The concentration polarization region formed on the surface of the piezoelectric film 14 will increase the roughness of the surface of the piezoelectric film 14 and make the flow field The conditions are changed. Near the surface of the piezoelectric film 14, a sharp change in the flow rate and a shear force surface are generated, so that the thickness of the concentration polarization region becomes thinner. At the same time, the place where the flow velocity is faster at the upper end is originally attached to the concentration electrode. The particles in the chemical zone are taken away, which increases the flow of pure liquid when the piezoelectric film 14 is filtered.
除此之外，流經殼體12中的流體會因為所包含的粒子而產生特定的電性，例如流經殼體12中的流體中的粒子帶有正電，而使用者則可以控制壓電薄膜14表面的電性，施以正電的電壓，以使壓電薄膜14與流體中的粒子之電性相同，以排開流體中的帶電粒子。此一作法的好處就是在過濾時與壓電薄膜14中過濾孔洞相似大小的粒子不會阻塞在壓電薄膜14的表面，而可過濾的液體則會自壓電薄膜14的表面往下沉澱並過濾出，而同極性帶電粒子被向上排開的同時，也會被振動時的湍流帶走，本發明不會像傳統過濾般都累積在薄膜表面附近以造成濃度極化，更加避免像一般傳統的過濾方式，需過濾的流體直接向下沉澱，容易很快使用於過濾薄膜堵塞住。本發明可以增加可以過濾時的流體量及增加可過濾的時間，並且可以減少線上清洗、反洗或是需要停機以進行更換膜管的維護成本。In addition, the fluid flowing through the shell 12 will generate specific electrical properties due to the particles contained in it. For example, the particles in the fluid flowing through the shell 12 are positively charged, and the user can control the pressure. A positive voltage is applied to the surface of the electrical thin film 14 to make the piezoelectric thin film 14 and the particles in the fluid have the same electrical properties so as to dispel charged particles in the fluid. The advantage of this method is that during filtering, particles of a size similar to the filter holes in the piezoelectric film 14 will not block the surface of the piezoelectric film 14, and the filterable liquid will precipitate from the surface of the piezoelectric film 14 and It is filtered out, and when the charged particles of the same polarity are discharged upward, they will also be taken away by the turbulence during vibration. The present invention does not accumulate near the surface of the film like traditional filtration to cause concentration polarization, and avoids the traditional polarization. The filtration method, the fluid to be filtered precipitates directly downward, and it is easy to quickly use the filter membrane to plug. The invention can increase the amount of fluid that can be filtered and the time that can be filtered, and can reduce the maintenance costs of online cleaning, backwashing, or the need to shut down to replace the membrane tube.
接著請參照本發明第三a圖及第三b圖所示，以說明壓電薄膜14 係如何產生形變的原理。壓電薄膜14會往長度或寬度的方向延伸或收縮以及厚度產生變化，可以藉由下列的公式表示： Δl = ld31 V/t (1) Δw = wd32 V/t (2) Δt = td33 V/t (3) 上述的公式(1)係為長度變化時的公式，公式(2)係為寬度變化時的公式，公式(3)係為厚度變化時的公式。其中的參數Δl代表壓電薄膜14長度的變化量，參數Δw代表壓電薄膜14寬度的變化量，參數Δt代表壓電薄膜14厚度的變化，參數l代表壓電薄膜14的原始長度，參數w代表壓電薄膜14的原始寬度，參數t代表壓電薄膜14的原始厚度，參數d31 、d32 、d33 代表壓電應變常數，參數V代表施加於壓電薄膜14的電壓。Next, please refer to FIG. 3a and FIG. 3b of the present invention to explain the principle of how the piezoelectric thin film 14 system is deformed. The piezoelectric film 14 will extend or shrink in the direction of length or width and change in thickness, which can be expressed by the following formula: Δl = ld 31 V / t (1) Δw = wd 32 V / t (2) Δt = td 33 V / t (3) The above formula (1) is the formula when the length is changed, the formula (2) is the formula when the width is changed, and the formula (3) is the formula when the thickness is changed. The parameter Δl represents the amount of change in the length of the piezoelectric film 14, the parameter Δw represents the amount of change in the width of the piezoelectric film 14, the parameter Δt represents the change in thickness of the piezoelectric film 14, the parameter l represents the original length of the piezoelectric film 14, and the parameter w Represents the original width of the piezoelectric film 14, parameter t represents the original thickness of the piezoelectric film 14, parameters d 31 , d 32 , and d 33 represent piezoelectric strain constants, and parameter V represents a voltage applied to the piezoelectric film 14.
本發明除了可以用於圓柱形殼體的管式過濾外，除了將壓電薄膜捲曲環設在殼體之外，另外也可以應用在平板式過濾。請參考本發明第四圖所示，一種壓電薄膜過濾裝置20包含一平板狀殼體22、至少一壓電薄膜24及一電源供應器26，此實施例亦是將壓電薄膜24裝設於殼體22之中，壓電薄膜24的二面再電性連接至電源供應器26，以接收電源供應器26所傳輸之電壓。除結構上的差異，此一實施例的作動方式及原理皆與上一個實施例相同，故不再贅述。In addition to the tube filter of the cylindrical case, the present invention can be applied to a flat-plate filter in addition to the piezoelectric film curling ring provided in the case. Please refer to the fourth figure of the present invention. A piezoelectric thin-film filter device 20 includes a flat-shaped casing 22, at least one piezoelectric thin-film 24, and a power supply 26. In this embodiment, the piezoelectric thin-film 24 is also installed. In the housing 22, both sides of the piezoelectric film 24 are electrically connected to the power supply 26 to receive the voltage transmitted by the power supply 26. Except for the structural difference, the operation mode and principle of this embodiment are the same as those of the previous embodiment, so they will not be described again.
本發明主要係在壓電薄膜過濾流體中的雜質及懸浮粒子時，同時接收電壓以產生逆壓電效應，造成壓電薄膜因形變而產生振動，除了加速掃流速度之外，並可因為電壓造成壓電薄膜與流體中帶電粒子的電性相同而產生推斥，以避免粒子阻塞在壓電薄膜的表面上，以提高過濾時的效能以及減低清洗維護的成本，壓電薄膜除了可以裝設在殼體中，亦可設置在過濾模組中，同時也可以利用電壓供電，以使壓電薄膜振動過濾。再者，本發明並不限制提供電壓的電源供應器應為直流電或交流電，可以依照使用者的需求作調整，可以使用直流電交錯開關而使壓電薄膜產生振動，或是提供不同頻率的交流電及改變電壓值而使壓電薄膜產生振動。當使用在管式過濾時，較常使用超過一片以上的壓電薄膜於殼體中，可以在兩片相鄰壓電薄膜中插設一間隔元件以避免兩片相鄰的壓電薄膜上的電性相互干擾，因此當壓電薄膜的數量係為N個時，當N ≥2則會包含N-1個間隔元件位於N個壓電薄膜中，本發明也不限制所需要安裝的壓電薄膜數量，壓電薄膜之數量可依據實際使用狀況而選擇調整。The invention is mainly used when the piezoelectric thin film filters impurities and suspended particles in a fluid, and simultaneously receives a voltage to generate an inverse piezoelectric effect, which causes the piezoelectric thin film to vibrate due to deformation. As a result, the piezoelectric film and the charged particles in the fluid have the same electrical properties and repulsion, so as to prevent particles from blocking on the surface of the piezoelectric film, in order to improve the filtering efficiency and reduce the cost of cleaning and maintenance. In addition to the piezoelectric film can be installed In the housing, it can also be set in the filter module, and at the same time, it can also be powered by voltage to make the piezoelectric film vibrate and filter. Furthermore, the present invention does not limit the power supply device that provides the voltage to be DC or AC. It can be adjusted according to the needs of the user. DC staggered switches can be used to make the piezoelectric film vibrate, or to provide AC with different frequencies and Changing the voltage value causes the piezoelectric film to vibrate. When used in a tube filter, more than one piezoelectric film is usually used in the housing. A spacer element can be inserted in two adjacent piezoelectric films to avoid the damage on the two adjacent piezoelectric films. Electricity interferes with each other. Therefore, when the number of piezoelectric films is N, when N ≥2, N-1 spaced elements are included in the N piezoelectric films. The present invention does not limit the piezoelectric films that need to be installed. The number of films and the number of piezoelectric films can be adjusted according to the actual use conditions.
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍。The above-mentioned embodiments are only for explaining the technical ideas and characteristics of the present invention. The purpose is to enable those skilled in the art to understand the contents of the present invention and implement them accordingly. When the scope of the patent of the present invention cannot be limited, That is, any equivalent changes or modifications made in accordance with the spirit disclosed in the present invention should still be covered by the patent scope of the present invention.
10‧‧‧壓電薄膜過濾裝置
12‧‧‧殼體
14‧‧‧壓電薄膜
142‧‧‧導電體
144‧‧‧電源接點
16‧‧‧電源供應器
18‧‧‧間隔元件
20‧‧‧壓電薄膜過濾裝置
22‧‧‧殼體
24‧‧‧壓電薄膜
26‧‧‧電源供應器10‧‧‧ Piezo film filter
12‧‧‧shell
14‧‧‧ Piezo film
142‧‧‧Conductor
144‧‧‧Power contact
16‧‧‧ Power Supply
18‧‧‧ spacer element
20‧‧‧ Piezo film filter
22‧‧‧shell
24‧‧‧ Piezo film
26‧‧‧ Power Supply
第一圖為本發明第一實施例的結構分解示意圖。 第二圖為本發明使用之壓電薄膜的側視圖。 第三a圖為本發明使用之壓電薄膜正面的示意圖。 第三b圖為本發明使用之壓電薄膜反面的示意圖。 第四圖為本發明第二實施例的立體示意圖。The first figure is an exploded view of the structure of the first embodiment of the present invention. The second figure is a side view of a piezoelectric film used in the present invention. The third a is a schematic diagram of the front surface of the piezoelectric film used in the present invention. Figure 3b is a schematic diagram of the reverse side of the piezoelectric film used in the present invention. The fourth figure is a schematic perspective view of a second embodiment of the present invention.
10‧‧‧壓電薄膜過濾裝置 10‧‧‧ Piezo film filter
12‧‧‧殼體 12‧‧‧shell
14‧‧‧壓電薄膜 14‧‧‧ Piezo film
16‧‧‧電源供應器 16‧‧‧ Power Supply
18‧‧‧間隔元件 18‧‧‧ spacer element
Claims (10)
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