TW201718398A - Method for producing hydrogen chloride - Google Patents
Method for producing hydrogen chloride Download PDFInfo
- Publication number
- TW201718398A TW201718398A TW105125317A TW105125317A TW201718398A TW 201718398 A TW201718398 A TW 201718398A TW 105125317 A TW105125317 A TW 105125317A TW 105125317 A TW105125317 A TW 105125317A TW 201718398 A TW201718398 A TW 201718398A
- Authority
- TW
- Taiwan
- Prior art keywords
- hydrogen chloride
- hydrochloric acid
- gas
- concentration
- flow rate
- Prior art date
Links
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 title claims abstract description 391
- 229910000041 hydrogen chloride Inorganic materials 0.000 title claims abstract description 173
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 title claims abstract description 173
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000004821 distillation Methods 0.000 claims abstract description 75
- 239000007788 liquid Substances 0.000 claims abstract description 55
- 239000011261 inert gas Substances 0.000 claims abstract description 37
- 230000018044 dehydration Effects 0.000 claims abstract description 17
- 238000006297 dehydration reaction Methods 0.000 claims abstract description 17
- 238000000926 separation method Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 abstract description 16
- 239000001257 hydrogen Substances 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 82
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 65
- 239000001569 carbon dioxide Substances 0.000 description 41
- 229910002092 carbon dioxide Inorganic materials 0.000 description 41
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 31
- 239000012535 impurity Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 14
- 238000009835 boiling Methods 0.000 description 13
- 239000002994 raw material Substances 0.000 description 10
- 238000001179 sorption measurement Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- FECNOIODIVNEKI-UHFFFAOYSA-N 2-[(2-aminobenzoyl)amino]benzoic acid Chemical class NC1=CC=CC=C1C(=O)NC1=CC=CC=C1C(O)=O FECNOIODIVNEKI-UHFFFAOYSA-N 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000998 batch distillation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001944 continuous distillation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/01—Chlorine; Hydrogen chloride
- C01B7/07—Purification ; Separation
- C01B7/0706—Purification ; Separation of hydrogen chloride
- C01B7/0712—Purification ; Separation of hydrogen chloride by distillation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
- B01D3/34—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping with one or more auxiliary substances
- B01D3/36—Azeotropic distillation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/01—Chlorine; Hydrogen chloride
- C01B7/07—Purification ; Separation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Abstract
Description
本發明係有關氯化氫之製造方法。 The present invention relates to a method for producing hydrogen chloride.
半導體等製造時所使用之作為蝕刻氣體、洗滌氣體或成膜氣體用的高純度之氯化氫(HCl)例如係由,將原料係使用合成鹽酸所得之氯化氫液化後,藉由蒸餾去除不純物所得。該製造方法中去除不純物時會因蒸餾而產生極大差異性,又因不純物中溴化氫(HBr)與二氧化碳(CO2)之沸點接近氯化氫,故不易藉由蒸餾去除,而有需具備較大尺寸之蒸餾塔等的問題。 High-purity hydrogen chloride (HCl) used as an etching gas, a scrubbing gas, or a film-forming gas used in the production of a semiconductor or the like is obtained, for example, by liquefying hydrogen chloride obtained by using a synthetic hydrochloric acid as a raw material, and then removing impurities by distillation. In the manufacturing method, impurities are greatly different in distillation, and since the boiling point of hydrogen bromide (HBr) and carbon dioxide (CO 2 ) in the impurities is close to hydrogen chloride, it is not easily removed by distillation, and it is necessary to have a larger Problems such as the size of the distillation column.
專利文獻1曾揭示,使含有溴化氫之氯化氫氣體通過因氯化氫而飽和之氯化氫水溶液,得降低溴化氫含量之氯化氫氣體的技術。但專利文獻1所揭示之技術會有,難達成近年來製造半導體用高純度氯化氫氣體所要求之不純物濃度水準,例如將溴化氫之含量降至0.2體積ppm程度的問題。 Patent Document 1 discloses a technique in which a hydrogen chloride gas containing hydrogen bromide is passed through an aqueous hydrogen chloride solution saturated with hydrogen chloride to obtain a hydrogen chloride gas having a reduced hydrogen bromide content. However, the technique disclosed in Patent Document 1 has a problem that it is difficult to achieve a level of impurity concentration required for producing a high-purity hydrogen chloride gas for semiconductor use in recent years, for example, to reduce the content of hydrogen bromide to about 0.2 ppm by volume.
又,專利文獻2曾揭示,各自預先精製氯(Cl2)與氫(H2)後進行反應以製造高純度氯化氫之技 術。氯係藉由蒸餾去除二氧化碳而精製化。但專利文獻2所揭示之技術會有,為了預先精製氯與氫而需設置蒸餾塔及吸附塔,使高純度氯化氫之製造設備複雜化,而難以高效率製造高純度氯化氫的問題。 Further, Patent Document 2 discloses a technique in which chlorine (Cl 2 ) and hydrogen (H 2 ) are each purified in advance to produce high-purity hydrogen chloride. The chlorine is refined by removing carbon dioxide by distillation. However, in the technique disclosed in Patent Document 2, in order to preliminarily purify chlorine and hydrogen, it is necessary to provide a distillation column and an adsorption tower to complicate the production equipment of high-purity hydrogen chloride, and it is difficult to efficiently produce high-purity hydrogen chloride.
專利文獻1:日本國專利公開公報2004年第2142號 Patent Document 1: Japanese Patent Publication No. 2142 of 2004
專利文獻2:日本國專利公表公報2013年第545704號 Patent Document 2: Japanese Patent Publication No. 545704, 2013
為了解決上述般先前技術所具有之問題點,本發明之課題為提供以簡便設備有效率製造高純度氯化氫之方法。 In order to solve the problems of the prior art described above, an object of the present invention is to provide a method for efficiently producing high-purity hydrogen chloride with a simple apparatus.
為了解決前述課題,本發明之一態樣為如下述[1]及[2]所述。 In order to solve the above problems, one aspect of the present invention is as described in the following [1] and [2].
[1]一種氯化氫之製造方法,其為備有使濃度為20質量%以上50質量%以下之鹽酸與不活性氣體進行氣液接觸之氣液接觸步驟,與 蒸餾前述氣液接觸步驟中與不活性氣體進行氣液接觸後之鹽酸而由鹽酸分離氯化氫得粗氯化氫之分離步驟,與將前述分離步驟所得之粗氯化氫脫水之脫水步驟,與壓縮前述脫水步驟所得之脫水後的粗氯化氫而液化後,藉由蒸餾精製該液狀之粗氯化氫之精製步驟。 [1] A method for producing hydrogen chloride, which comprises a gas-liquid contact step of bringing a concentration of 20% by mass or more and 50% by mass or less of hydrochloric acid into an air-liquid contact with an inert gas, and a step of separating the hydrochloric acid obtained by gas-liquid contact with the inert gas in the gas-liquid contacting step, separating the hydrogen chloride from hydrochloric acid to obtain crude hydrogen chloride, a dehydration step of dehydrating the crude hydrogen chloride obtained in the separating step, and compressing the dehydration step After the dehydrated crude hydrogen chloride is liquefied, the liquid crude hydrogen chloride is purified by distillation.
[2]如[1]所記載之氯化氫之製造方法,其中前述氣液接觸步驟為,藉由使不活性氣體,與線速度0.1m/h以上15m/h以下且空間速度0.1/h以上10/h以下之流量的鹽酸進行逆流接觸,而使鹽酸氣液接觸不活性氣體之步驟,又,相對於鹽酸之體積流量的不活性氣體之體積流量的比值為0.01以上100以下。 [2] The method for producing hydrogen chloride according to [1], wherein the gas-liquid contacting step is performed by using an inert gas with a linear velocity of 0.1 m/h or more and 15 m/h or less and a space velocity of 0.1/h or more and 10 The flow rate of hydrochloric acid at a flow rate of /h or less is reversed, and the reaction of the hydrochloric acid gas liquid with the inert gas is performed, and the ratio of the volume flow rate of the inert gas to the volume flow rate of hydrochloric acid is 0.01 or more and 100 or less.
本發明可以簡便設備有效率製造高純度氯化氫。 The invention can produce high-purity hydrogen chloride efficiently and conveniently.
10‧‧‧緩衝槽 10‧‧‧buffer tank
15‧‧‧二氧化碳擴散塔 15‧‧‧Carbon Diffusion Tower
20‧‧‧蒸餾塔 20‧‧‧Distillation tower
30‧‧‧凝縮器 30‧‧‧Condenser
40‧‧‧水分吸附塔 40‧‧‧Water adsorption tower
50‧‧‧壓縮機 50‧‧‧Compressor
60‧‧‧蒸餾塔 60‧‧‧Distillation tower
圖1為,說明實施例1之高純度氯化氫之製造方法之高純度氯化氫的製造設備概略圖。 Fig. 1 is a schematic view showing a manufacturing apparatus of high-purity hydrogen chloride in the method for producing high-purity hydrogen chloride of Example 1.
圖2為,說明實施例2之高純度氯化氫之製造方法之高純度氯化氫的製造設備概略圖。 Fig. 2 is a schematic view showing a manufacturing apparatus of high-purity hydrogen chloride in the method for producing high-purity hydrogen chloride of the second embodiment.
為了解決前述課題而經本發明者們專心檢討後發現,使鹽酸與不活性氣體進行氣液接觸後,藉由蒸餾而由鹽酸分離氯化氫,可以簡便設備有效率製造不純物(例如沸點近似氯化氫而難藉由蒸餾去除之溴化氫、二氧化碳)含量較低之氯化氫,而完成本發明。下面將詳細說明本發明之一實施形態。 In order to solve the above-mentioned problems, the inventors of the present invention have intensively reviewed and found that after hydrogen chloride and an inert gas are brought into gas-liquid contact, hydrogen chloride is separated by hydrochloric acid by distillation, whereby impurities can be easily produced efficiently by means of equipment (for example, boiling point is similar to hydrogen chloride and it is difficult to borrow The present invention has been completed by hydrogen chloride having a lower content of hydrogen bromide and carbon dioxide which are removed by distillation. An embodiment of the present invention will be described in detail below.
本實施形態之氯化氫之製造方法為,備有使濃度為20質量%以上50質量%以下之鹽酸與不活性氣體進行氣液接觸之氣液接觸步驟,與蒸餾氣液接觸步驟中與不活性氣體進行氣液接觸後之鹽酸而由鹽酸分離氯化氫得粗氯化氫之分離步驟,與將分離步驟所得之粗氯化氫脫水之脫水步驟,與壓縮脫水步驟所得之脫水後的粗氯化氫而液化後,藉由蒸餾精製該液狀之粗氯化氫之精製步驟。 The method for producing hydrogen chloride according to the present embodiment includes a gas-liquid contact step of bringing a concentration of 20% by mass or more and 50% by mass or less of hydrochloric acid into contact with an inert gas in a gas-liquid contact, and a step of contacting the distillate gas with the inert gas. a step of separating hydrochloric acid obtained by gas-liquid contact and separating hydrogen chloride from hydrochloric acid to obtain crude hydrogen chloride, liquefying the dehydrated step of dehydrating the crude hydrogen chloride obtained in the separation step, and dehydrating the crude hydrogen chloride obtained by the compression dehydration step, followed by distillation A step of purifying the crude crude hydrogen chloride in the form of a liquid.
本實施形態的高純度氯化氫之製造方法中作為原料用之鹽酸為,氯化氫之濃度為20質量%以上50質量%以下之水溶液。氯化氫之濃度為20質量%以上50質量%以下時,例如以蒸餾塔蒸餾鹽酸時由塔頂部得到的氣體含有豐富之氯化氫。氯化氫之濃度未達20質量%時,因不具有共沸組成以上之氯化氫濃度,故由塔頂部得到的氣體無法含有豐富之氯化氫。又,氯化氫之濃度超過50質量%的鹽酸於常溫且大氣壓條件下會超過氯化氫之飽和溶解度,故一般不使用。又以常溫且大氣壓條件下,氯化氫之濃度為40質量%以下之鹽酸為佳。 In the method for producing high-purity hydrogen chloride of the present embodiment, the hydrochloric acid used as the raw material is an aqueous solution having a concentration of hydrogen chloride of 20% by mass or more and 50% by mass or less. When the concentration of hydrogen chloride is 20% by mass or more and 50% by mass or less, for example, the gas obtained from the top of the column when the hydrochloric acid is distilled in a distillation column contains abundant hydrogen chloride. When the concentration of hydrogen chloride is less than 20% by mass, the gas obtained from the top of the column cannot contain abundant hydrogen chloride because it does not have a concentration of hydrogen chloride equal to or higher than the azeotropic composition. Further, since hydrochloric acid having a concentration of hydrogen chloride exceeding 50% by mass exceeds the saturated solubility of hydrogen chloride at normal temperature and atmospheric pressure, it is generally not used. Further, hydrochloric acid having a hydrogen chloride concentration of 40% by mass or less is preferably used under normal temperature and atmospheric pressure conditions.
本實施形態中氯化氫中之不純物特別重視溴化氫與二氧化碳,該等之混入原因為原料用之鹽酸。一般的合成鹽酸之溴化氫的濃度通常為1質量ppm以上100質量ppm以下,二氧化碳之濃度通常為0.01質量ppm以上5質量ppm以下。如前述般,即使蒸餾先前方法由合成鹽酸得到的氯化氫以製造高純度氯化氫,也會因溴化氫、二氧化碳之沸點近似氯化氫而難充分去除。 In the present embodiment, the impurities in the hydrogen chloride are particularly important for hydrogen bromide and carbon dioxide, and the reason for the mixing is hydrochloric acid for the raw material. The concentration of hydrogen bromide in the general synthetic hydrochloric acid is usually 1 ppm by mass or more and 100 ppm by mass or less, and the concentration of carbon dioxide is usually 0.01 ppm by mass or more and 5 ppm by mass or less. As described above, even if hydrogen chloride obtained by synthesizing hydrochloric acid in the previous method is distilled to produce high-purity hydrogen chloride, it is difficult to sufficiently remove hydrogen chloride and carbon dioxide at a boiling point similar to hydrogen chloride.
實驗上由二氧化碳取得的液化之氯化氫中二氧化碳之氣液平衡常數(K-value=[CO2]gas phase/[CO2]liquid phase)為1.3,因接近1故氣液下之分離效率差。但因鹽酸之狀態為水溶液,故藉由不活性氣體之氣液接觸,易由鹽酸去除二氧化碳。因此使用該去除二氧化碳後之鹽酸,可製造例如二氧化碳之濃度未達0.4體積ppm般低濃度之高純度氯化氫。 The gas-liquid equilibrium constant (K-value=[CO 2 ]gas phase/[CO 2 ]liquid phase) of carbon dioxide in the liquefied hydrogen chloride obtained by carbon dioxide was experimentally 1.3, and the separation efficiency under gas-liquid was poor due to the closeness to 1. However, since the state of hydrochloric acid is an aqueous solution, carbon dioxide is easily removed from hydrochloric acid by contact with gas and liquid of an inert gas. Therefore, by using the hydrochloric acid obtained by removing carbon dioxide, for example, high-purity hydrogen chloride having a low concentration of carbon dioxide as low as 0.4 ppm by volume can be produced.
本實施形態的氯化氫之製造方法中的氣液接觸步驟為,使氮(N2)、氬、氦等不活性氣體與鹽酸進行氣液接觸。不活性氣體與鹽酸之氣液接觸方法無特別限定,但就效率方面較佳為,藉由使鹽酸由上方流動至下方,及使不活性氣體由下方流動至上方之逆流接觸方式進行。 In the gas-liquid contact step in the method for producing hydrogen chloride according to the present embodiment, an inert gas such as nitrogen (N 2 ), argon or helium is brought into gas-liquid contact with hydrochloric acid. The method of contacting the gas and liquid of the inert gas with hydrochloric acid is not particularly limited, but it is preferably carried out by a countercurrent contact method in which hydrochloric acid flows from the upper side to the lower side and the inert gas flows from the lower side to the upper side in terms of efficiency.
使鹽酸與不活性氣體進行氣液接觸時之較佳條件會因所使用的裝置結構、鹽酸之濃度等而異,無法一概言之,但較佳為溫度0℃以上60℃以下且壓力0.01MPa以上1MPa以下(絕對壓)。 The preferable conditions for bringing the hydrochloric acid into contact with the inert gas in gas-liquid contact may vary depending on the structure of the apparatus to be used, the concentration of hydrochloric acid, etc., and cannot be generalized, but it is preferably a temperature of 0 ° C or more and 60 ° C or less and a pressure of 0.01 MPa. Above 1 MPa (absolute pressure).
又,有關氣液接觸時鹽酸與不活性氣體之流量,經本發明者們專心檢討後發現,以下述條件進行氣液接觸時,可更有效去除二氧化碳。又,鹽酸與不活性氣體之氣液接觸可為連續式或分批式。 Further, the flow rate of the hydrochloric acid and the inert gas in the gas-liquid contact was investigated by the inventors, and it was found that the gas-liquid contact can be more effectively removed by gas-liquid contact under the following conditions. Further, the gas-liquid contact of the hydrochloric acid with the inert gas may be continuous or batchwise.
即,較佳為使鹽酸之流量為線速度0.1m/h以上15m/h以下且空間速度0.1/h以上10/h以下,相對於鹽酸之體積流量的不活性氣體之體積流量的比值為0.01以上100以下。鹽酸之線速度較佳為0.1m/h以上15m/h以下,又以1m/h以上10m/h以下為佳,更佳為1.5m/h以上7m/h以下。又,鹽酸之空間速度較佳為0.1/h以上10/h以下,又以0.1/h以上5/h以下為佳,更佳為0.2/h以上3/h以下。另外相對於鹽酸之體積流量的不活性氣體之體積流量的比值較佳為0.01以上100以下,又以0.1以上50以下為佳,更佳為1以上40以下。 That is, it is preferable that the flow rate of hydrochloric acid is a linear velocity of 0.1 m/h or more and 15 m/h or less, a space velocity of 0.1/h or more and 10/h or less, and a ratio of a volume flow rate of an inert gas to a volume flow rate of hydrochloric acid is 0.01. Above 100 or less. The linear velocity of hydrochloric acid is preferably 0.1 m/h or more and 15 m/h or less, more preferably 1 m/h or more and 10 m/h or less, and more preferably 1.5 m/h or more and 7 m/h or less. Further, the space velocity of hydrochloric acid is preferably 0.1/h or more and 10/h or less, more preferably 0.1/h or more and 5/h or less, and more preferably 0.2/h or more and 3/h or less. Further, the ratio of the volume flow rate of the inert gas to the volume flow rate of hydrochloric acid is preferably 0.01 or more and 100 or less, more preferably 0.1 or more and 50 or less, still more preferably 1 or more and 40 or less.
使鹽酸之流量為線速度0.1m/h以上15m/h以下且空間速度0.1/h以上10/h以下時,藉由鹽酸與不活性氣體之氣液接觸可充分由鹽酸去除二氧化碳,且可有效率得到充分量之去除二氧化碳的鹽酸。 When the flow rate of hydrochloric acid is 0.1 m/h or more and 15 m/h or less and the space velocity is 0.1/h or more and 10/h or less, carbon dioxide can be sufficiently removed from hydrochloric acid by contact with a gas-liquid of an inert gas, and may have The efficiency is obtained in a sufficient amount to remove carbon dioxide from hydrochloric acid.
又,使不活性氣體之流量為,相對於鹽酸之體積流量的不活性氣體之體積流量的比值為0.01以上100以下時,藉由鹽酸與不活性氣體之氣液接觸可充分由鹽酸去除二氧化碳。一般推測流量愈大時愈可提升二氧化碳之去除效率,但實際上不活性氣體之流量相對於二氧化碳之去除效率的影響性不大。因此即使相對於鹽酸之體積流量的不 活性氣體之體積流量的比值大於100,除了無法有助於進一步提升二氧化碳之去除效率外,恐伴隨著鹽酸飛沫而損失鹽酸。分批式時相對於鹽酸之體積的不活性氣體之體積的比值較佳為0.1以上100以下,此時之氣液接觸時間較佳為3分鐘以上300分鐘以下。 Further, when the flow rate of the inert gas is such that the ratio of the volume flow rate of the inert gas to the volume flow rate of hydrochloric acid is 0.01 or more and 100 or less, carbon dioxide can be sufficiently removed by hydrochloric acid by contact with the gas-liquid of the inert gas. It is generally estimated that the higher the flow rate, the higher the removal efficiency of carbon dioxide, but in fact the flow rate of the inert gas is less affected by the removal efficiency of carbon dioxide. Therefore even if the volume flow rate relative to hydrochloric acid is not The ratio of the volume flow rate of the active gas is greater than 100. In addition to the inability to further enhance the removal efficiency of carbon dioxide, hydrochloric acid may be lost with the splash of hydrochloric acid. The ratio of the volume of the inert gas to the volume of hydrochloric acid in the batch mode is preferably 0.1 or more and 100 or less, and the gas-liquid contact time at this time is preferably 3 minutes or more and 300 minutes or less.
其次實驗上由溴化氫取得的液化之氯化氫中溴化氫之氣液平衡常數(K-value=[HBr]gas phase/[HBr]liquid phase)為0.8,因接近1故氣液下之分離效率差。但將濃度35質量%之鹽酸加熱再測定蒸發後氯化氫中溴化氫之濃度,與殘液中溴化氫之濃度,求取鹽酸中溴化氫之氣液平衡常數,結果為0.2。故得知與液化之氯化氫中溴化氫的舉動具有較大差異性。 Secondly, the gas-liquid equilibrium constant (K-value=[HBr]gas phase/[HBr]liquid phase) of hydrogenated hydrogen chloride in the liquefied hydrogen chloride obtained by hydrogen bromide is 0.8, which is close to 1 and therefore separated by gas and liquid. Poor efficiency. However, the concentration of hydrogen bromide in the hydrogen chloride after evaporation was measured, and the concentration of hydrogen bromide in the hydrogen chloride and the concentration of hydrogen bromide in the residue were determined to obtain a gas-liquid equilibrium constant of hydrogen bromide in hydrochloric acid, and the result was 0.2. Therefore, it is known that there is a large difference in the behavior of hydrogen bromide in the liquefied hydrogen chloride.
即,發現蒸餾氯化氫時難充分分離溴化氫,但蒸餾鹽酸時易分離溴化氫。又,本實施形態非藉由加熱及導入不活性氣體而以鹽酸擴散氯化氫得粗氯化氫,而係藉由蒸餾鹽酸得粗氯化氫。即,本實施形態的氯化氫之製造方法為,分離步驟中蒸餾氣液接觸步驟中與不活性氣體進行氣液接觸後之鹽酸,而由鹽酸分離氯化氫得粗氯化氫。 That is, it was found that it is difficult to sufficiently separate hydrogen bromide when distilling hydrogen chloride, but it is easy to separate hydrogen bromide when distilling hydrochloric acid. Further, in the present embodiment, crude hydrogen chloride is obtained by diffusing hydrogen chloride with hydrochloric acid by heating and introducing an inert gas, and crude hydrogen chloride is obtained by distilling hydrochloric acid. In other words, in the method for producing hydrogen chloride according to the present embodiment, hydrochloric acid obtained by gas-liquid contact with the inert gas in the distillation gas-liquid contact step in the separation step is separated from hydrogen chloride to obtain crude hydrogen chloride.
蒸餾原料用之鹽酸時可以連續式進行,或分批式進行,但以連續式進行為佳。將鹽酸導入蒸餾塔之方式可因應連續式或分批式蒸餾鹽酸而適當選擇。連續式時係連續將鹽酸導入蒸餾塔。鹽酸導入蒸餾塔時之位置,就考量藉由蒸餾之溴化氫的分離效率,及防止藉由餾出氯化氫而稀釋濃度之鹽酸由塔頂餾出之效率,較佳為蒸餾塔高 度方向中央部位附近。 The hydrochloric acid for distilling the raw material may be continuously or batchwise, but it is preferably carried out in a continuous manner. The method of introducing hydrochloric acid into the distillation column can be appropriately selected in accordance with continuous or batchwise distillation of hydrochloric acid. In the continuous mode, hydrochloric acid is continuously introduced into the distillation column. When the hydrochloric acid is introduced into the distillation column, the separation efficiency of hydrogen bromide by distillation and the efficiency of distilling off the concentration of hydrochloric acid diluted by distillation of hydrogen chloride from the top are prevented, preferably the distillation column is high. The direction is near the central part.
藉由蒸餾鹽酸可由蒸餾塔塔頂得溴化氫濃度較低之粗氯化氫,及由蒸餾塔塔底餾出溴化氫含量較多且藉由餾出氯化氫而稀釋濃度之鹽酸。溴化氫之分配率可因應氣液平衡常數之值(例如0.2)與蒸餾塔之段數而決定。由蒸餾塔塔底餾出之鹽酸濃度無特別限定,但較佳為蒸餾條件之壓力下的共沸濃度,大氣壓下為20質量%。 The crude hydrogen chloride having a lower hydrogen bromide concentration can be obtained from the distillation column by distilling hydrochloric acid, and the hydrochloric acid having a higher content of hydrogen bromide and having a dilute concentration by distilling hydrogen chloride from the bottom of the distillation column is distilled off. The distribution ratio of hydrogen bromide can be determined by the value of the gas-liquid equilibrium constant (for example, 0.2) and the number of stages of the distillation column. The concentration of hydrochloric acid distilled from the bottom of the distillation column is not particularly limited, but is preferably an azeotropic concentration under the pressure of distillation conditions and 20% by mass under atmospheric pressure.
分離步驟中蒸餾鹽酸之操作壓力為,使該操作壓力下共沸氯化氫濃度比供給蒸餾的鹽酸之氯化氫濃度更低般之壓力。符合該類條件之操作壓力值係由鹽酸之氯化氫濃度及共沸氯化氫濃度與壓力之關係而決定。以操作壓力下使共沸氯化氫濃度為原料鹽酸之氯化氫濃度以上般之操作壓力進行蒸餾時,由塔頂得到之餾分會伴隨水分而混入大量溴化氫。又,以操作壓力下使共沸氯化氫濃度比原料鹽酸之氯化氫濃度更低般之操作壓力進行蒸餾時,可防止由塔頂餾出水分,得溴化氫濃度較低之粗氯化氫。 The operating pressure at which the hydrochloric acid is distilled in the separation step is such that the concentration of the azeotropic hydrogen chloride at the operating pressure is lower than the concentration of the hydrogen chloride supplied to the distilled hydrochloric acid. The operating pressure values that meet this type of condition are determined by the relationship between the concentration of hydrogen chloride in hydrochloric acid and the concentration of azeotropic hydrogen chloride and pressure. When distillation is carried out under an operating pressure such that the azeotropic hydrogen chloride concentration is equal to or higher than the hydrogen chloride concentration of the raw material hydrochloric acid, the fraction obtained from the top of the column is mixed with a large amount of hydrogen bromide with water. Further, when distillation is carried out at an operating pressure lower than the concentration of hydrogen chloride of the raw material hydrochloric acid under the operating pressure, it is possible to prevent the crude hydrogen chloride from having a low hydrogen bromide concentration by distilling off the water from the top.
鹽酸之蒸餾操作壓力較佳由0.1MPa以上0.5MPa以下(絕對壓)之範圍內選擇。該類操作壓力下蒸餾鹽酸時,不會增加蒸餾設備之負荷,可得充分量之粗氯化氫。減壓條件下進行蒸餾時可提高共沸組成之氯化氫濃度,因此會減少所得之氯化氫量而不宜。 The distillation operation pressure of hydrochloric acid is preferably selected from the range of 0.1 MPa or more and 0.5 MPa or less (absolute pressure). When the hydrochloric acid is distilled under such operating pressure, the load of the distillation apparatus is not increased, and a sufficient amount of crude hydrogen chloride can be obtained. When the distillation is carried out under reduced pressure, the concentration of hydrogen chloride in the azeotropic composition can be increased, so that the amount of hydrogen chloride obtained is not preferable.
又,鹽酸之蒸餾操作溫度(蒸餾塔塔底之溫度)會依存於操作壓力等,但一般為100℃以上150℃以下。 Further, the distillation operation temperature of hydrochloric acid (the temperature at the bottom of the distillation column) depends on the operating pressure or the like, but is generally 100 ° C or more and 150 ° C or less.
另外蒸餾塔之形式無特別限定,可使用填充塔、棚段 塔等一般所使用之蒸餾塔,但以結構簡單之填充塔為佳。填入填充塔之填充物可使用例如拉西環、波爾環、特拉雷(登記商標)等已知之物。 Further, the form of the distillation column is not particularly limited, and a packed tower or a shed can be used. A distillation column generally used for a tower or the like is preferred, but a packed column having a simple structure is preferred. For the filling of the packed tower, known things such as Raschig rings, Boer rings, Traray (registered trademark), and the like can be used.
其次本實施形態的氯化氫之製造方法中脫水步驟為,將分離步驟所得之粗氯化氫脫水,脫水方法無特別限定。例如於填入活性氧化鋁、沸石等之載體的吸收器內使載體接觸粗氯化氫,藉由載體之吸附作用而由粗氯化氫去除水分之方法,或將粗氯化氫冷卻而凝縮水分之方法。又可組合上述使用載體之方法與凝縮水分之方法。 Next, in the method for producing hydrogen chloride according to the present embodiment, the dehydration step is carried out by dehydrating the crude hydrogen chloride obtained in the separation step, and the dehydration method is not particularly limited. For example, a method in which a carrier is contacted with a crude hydrogen chloride in an absorber filled with a carrier such as activated alumina or zeolite, a method of removing water by crude hydrogen chloride by adsorption of a carrier, or a method of cooling crude hydrogen chloride to condense moisture. Further, the above method of using a carrier and a method of condensing moisture can be combined.
其次本實施形態的氯化氫之製造方法中精製步驟為,例如0℃程度時以2.6MPa(絕對壓)以上之壓力壓縮脫水步驟中脫水後之粗氯化氫而液化後,藉由蒸餾精製該液狀之粗氯化氫得高純度氯化氫。精製步驟所使用之蒸餾裝置可為,備有一般蒸餾所需機能之物,較佳為使用棚段塔、填充塔等之精餾裝置(蒸餾塔)。但以結構簡單之填充塔為佳。填入填充塔之填充物可使用例如拉西環、波爾環、特拉雷(登記商標)等已知之物。又,蒸餾時可以連續式進行(連續蒸餾),或以分批式進行(分批蒸餾)。 In the method for producing hydrogen chloride according to the present embodiment, for example, the crude hydrogen chloride dehydrated in the dehydration step is compressed and liquefied at a pressure of 2.6 MPa (absolute pressure) or more at a temperature of about 0 ° C, and then the liquid is purified by distillation. Crude hydrogen chloride gives high purity hydrogen chloride. The distillation apparatus used in the refining step may be one which has a function required for general distillation, and is preferably a rectification apparatus (distillation column) using a shed column or a packed column. However, it is better to use a packed tower with a simple structure. For the filling of the packed tower, known things such as Raschig rings, Boer rings, Traray (registered trademark), and the like can be used. Further, the distillation may be carried out continuously (continuous distillation) or in a batchwise manner (batch distillation).
蒸餾氯化氫之操作條件可因應實用性及所要求的氯化氫品質等而為各種形態,無特別限定。但考量不要使蒸餾塔之塔頂溫度過低之情形下,操作壓力可為0.1MPa以上10MPa以下,較佳為0.5MPa以上5MPa以下。該類操作條件下可使蒸餾塔之塔頂溫度約為-80℃以 上60℃以下之範圍內。以上述條件進行蒸餾時,可由塔頂部取出低沸點成分,及由底部取出高沸點成分,再由蒸餾塔之中段得到高純度氯化氫。 The operating conditions for distilling hydrogen chloride may be various depending on the practicality and the required quality of hydrogen chloride, and the like, and are not particularly limited. However, in the case where the temperature at the top of the distillation column is not too low, the operating pressure may be 0.1 MPa or more and 10 MPa or less, preferably 0.5 MPa or more and 5 MPa or less. Under such operating conditions, the top temperature of the distillation column can be about -80 ° C. Above 60 ° C. When the distillation is carried out under the above conditions, the low-boiling component can be taken out from the top of the column, and the high-boiling component can be taken out from the bottom, and high-purity hydrogen chloride can be obtained from the middle of the distillation column.
藉由該類本實施形態的氯化氫之製造方法,可以簡便設備有效率製造例如純度99.999質量%以上之高純度氯化氫。所製造之高純度氯化氫可作為,例如半導體或薄膜電晶體製造時之蝕刻氣體、洗滌氣體用。特別是Si-Ge(半導體)、GaN(發光二極管等)、SiC(動力半導體)之晶體外延成長步驟中,除了作為洗滌氣體外也可作為成膜氣體用,但因成膜氣體中存在不純物會使膜中殘留不純物,故藉由本實施形態的氯化氫之製造方法所得之高純度氯化氫極為有用。另外高純度氯化氫也可使用於製造醫療用品、染料中間物等之各種化學藥品。 According to the method for producing hydrogen chloride of the present embodiment, it is possible to efficiently produce, for example, high-purity hydrogen chloride having a purity of 99.999 mass% or more. The high-purity hydrogen chloride produced can be used, for example, as an etching gas or a scrubbing gas in the production of a semiconductor or a thin film transistor. In particular, in the crystal epitaxial growth step of Si-Ge (semiconductor), GaN (light-emitting diode, etc.), or SiC (power semiconductor), it can be used as a film forming gas in addition to a cleaning gas, but impurities may exist in the film forming gas. Since the impurities remain in the film, the high-purity hydrogen chloride obtained by the method for producing hydrogen chloride of the present embodiment is extremely useful. In addition, high-purity hydrogen chloride can also be used to manufacture various chemicals such as medical supplies, dye intermediates, and the like.
又,本實施形態為本發明之一例示,本發明非限定於本實施形態。又,本實施形態可進行各種變更或改良,且該類變更或改良之形態也包括於本發明。 Further, the present embodiment is an example of the present invention, and the present invention is not limited to the embodiment. Further, the present embodiment can be variously modified or improved, and such modifications or improvements are also included in the present invention.
下面將舉實施例更詳細說明本發明。 The invention will now be described in more detail by way of examples.
使用圖1所示之製造設備製造高純度氯化氫。所使用之原料鹽酸為,氯化氫濃度為35質量%且所含不純物中溴化氫為70質量ppm、二氧化碳為2質量ppm之物。 High purity hydrogen chloride was produced using the manufacturing apparatus shown in FIG. The raw material hydrochloric acid to be used was a product having a hydrogen chloride concentration of 35% by mass and a hydrolyzate containing 70 ppm by mass of impurities and 2 ppm by mass of carbon dioxide.
藉由鹽酸導入管11以580kg/h之流量將鹽酸導入容量1000kg之緩衝槽10內。其次相對於緩衝槽10內之鹽酸,藉由不活性氣體導入管12以600NL/h之流量導入氮,常溫環境下使其起泡(氣液接觸步驟)。 Hydrochloric acid was introduced into the buffer tank 10 having a capacity of 1000 kg by a hydrochloric acid introduction pipe 11 at a flow rate of 580 kg/h. Next, with respect to the hydrochloric acid in the buffer tank 10, nitrogen is introduced through the inert gas introduction pipe 12 at a flow rate of 600 NL/h, and foaming is performed at a normal temperature (gas-liquid contact step).
以580kg/h之流量連續將鹽酸導入緩衝槽10內使氮連續起泡的同時,以580kg/h之流量由緩衝槽10連續排出鹽酸,且藉由鹽酸送液管21送液入蒸餾塔20內。此時相對於鹽酸之體積流量的不活性氣體之體積流量的比值為1.3。 Hydrochloric acid was continuously introduced into the buffer tank 10 at a flow rate of 580 kg/h to continuously bubble nitrogen, and hydrochloric acid was continuously discharged from the buffer tank 10 at a flow rate of 580 kg/h, and liquid was fed into the distillation column 20 through the hydrochloric acid liquid supply pipe 21. Inside. At this time, the ratio of the volume flow rate of the inert gas to the volume flow rate of hydrochloric acid was 1.3.
蒸餾塔20內以壓力0.1MPaG、溫度115℃之條件蒸餾與不活性氣體進行氣液接觸後之鹽酸,由鹽酸分離出氯化氫(分離步驟)。由蒸餾塔20之塔頂部以93kg/h之流量排出粗氯化氫,且由蒸餾塔20之底部以487kg/h之流量排出藉由餾出氯化氫而稀釋濃度之鹽酸。 In the distillation column 20, hydrochloric acid after gas-liquid contact with an inert gas is distilled under the conditions of a pressure of 0.1 MPaG and a temperature of 115 ° C, and hydrogen chloride is separated by hydrochloric acid (separation step). Crude hydrogen chloride was discharged from the top of the column of the distillation column 20 at a flow rate of 93 kg/h, and hydrochloric acid diluted by distilling hydrogen chloride was discharged from the bottom of the distillation column 20 at a flow rate of 487 kg/h.
由塔頂部排出之粗氯化氫的氯化氫濃度為96體積%,不純物中溴化氫之濃度為0.2體積ppm,二氧化碳之濃度為10體積ppm。又,由底部排出之鹽酸的氯化氫濃度為23質量%,不純物中溴化氫之濃度為83質量ppm及二氧化碳之濃度為1質量ppm。 The hydrogen chloride concentration of the crude hydrogen chloride discharged from the top of the column was 96% by volume, the concentration of hydrogen bromide in the impurity was 0.2 ppm by volume, and the concentration of carbon dioxide was 10 ppm by volume. Further, the concentration of hydrogen chloride discharged from the bottom portion was 23% by mass, the concentration of hydrogen bromide in the impurity was 83 ppm by mass, and the concentration of carbon dioxide was 1 ppm by mass.
因由蒸餾塔20之塔頂部排出的粗氯化氫含有水分,故送入凝縮器30及水分吸附塔40內進行脫水(脫水步驟)。即,藉由氯化氫用配管31由蒸餾塔20將粗氯化氫送入凝縮器30內,冷卻至-5℃使粗氯化氫中之水分凝縮,以去除粗氯化氫中部分之水分。 Since the crude hydrogen chloride discharged from the top of the column of the distillation column 20 contains water, it is sent to the condenser 30 and the moisture adsorption tower 40 for dehydration (dehydration step). That is, the crude hydrogen chloride is supplied into the condenser 30 from the distillation column 20 by the hydrogen chloride piping 31, and is cooled to -5 ° C to condense the water in the crude hydrogen chloride to remove a part of the moisture in the crude hydrogen chloride.
另外藉由氯化氫用配管41由凝縮器30將粗氯化氫送入水分吸附塔40內流通於填入水分吸附塔40內之吸附劑(尤尼翁昭和股份公司製之莫雷秋3A)進行脫水。藉此可以90kg/h之流量得脫水後之粗氯化氫。脫水後之粗氯化氫的氯化氫濃度為99.9體積%,含有13體積ppm之不純物二氧化碳。 In addition, the crude hydrogen chloride is sent to the moisture adsorption tower 40 by the condenser 41 through the hydrogen chloride charging pipe 40, and is adsorbed by the adsorbent (Mooreqiu 3A, manufactured by Unicorn Showa Co., Ltd.) which is filled in the moisture adsorption tower 40. Thereby, the crude hydrogen chloride after dehydration can be obtained at a flow rate of 90 kg/h. The crude hydrogen chloride after dehydration had a hydrogen chloride concentration of 99.9% by volume and contained 13 ppm by volume of impurity carbon dioxide.
藉由氯化氫用配管51由水分吸附塔40將脫水後之粗氯化氫送入壓縮機50內,以壓縮機50施加2.6MPa以上(絕對壓)壓縮而凝縮(液化)。藉由氯化氫用配管61由壓縮機50將液化後之粗氯化氫送入蒸餾塔60內,藉由蒸餾各自去除低沸成分及高沸成分再由蒸餾塔中段取出高純度氯化氫(精製步驟)。 The dehydrated crude hydrogen chloride is sent to the compressor 50 by the moisture adsorption tower 40 by the hydrogen chloride charging pipe 40, and is compressed by the compressor 50 by 2.6 MPa or more (absolute pressure) to be condensed (liquefied). The crude hydrogen chloride liquefied by the compressor 50 is sent to the distillation column 60 by the hydrogen chloride pipe 61, and the low-boiling component and the high-boiling component are removed by distillation, and high-purity hydrogen chloride is taken out from the middle of the distillation column (refining step).
詳細而言即,首先為了去除所含微量之重金屬成分,由底部以9.0kg/h之流量排出高沸成分,其後由塔頂部以1.8kg/h之流量排出含有二氧化碳含量為520體積ppm的濃度99體積%之氯化氫的低沸成分。 Specifically, first, in order to remove a trace amount of the heavy metal component, the high boiling component is discharged from the bottom at a flow rate of 9.0 kg/h, and then discharged from the top of the column at a flow rate of 1.8 kg/h, and the carbon dioxide content is 520 ppm by volume. A low boiling component of 99% by volume of hydrogen chloride.
藉此可由蒸餾塔60中段以79kg/h之流量得純度99.999質量%以上之高純度氯化氫。測定所得高純度氯化氫所含之不純物濃度,結果溴化氫為0.2體積ppm,二氧化碳為1.8體積ppm。 Thereby, high-purity hydrogen chloride having a purity of 99.999 mass% or more can be obtained from the middle portion of the distillation column 60 at a flow rate of 79 kg/h. The concentration of the impurities contained in the obtained high-purity hydrogen chloride was measured, and as a result, hydrogen bromide was 0.2 ppm by volume and carbon dioxide was 1.8 ppm by volume.
使用圖2所示之製造設備製造高純度氯化氫。實施例2之高純度氯化氫之製造方法為,除了氣液接觸步驟外, 幾乎與實施例1之高純度氯化氫之製造方法相同。又,所使用之原料鹽酸為,與實施例1相同之物。又,圖2中相同或相當之部分賦予與圖1相同之符號。 High purity hydrogen chloride was produced using the manufacturing apparatus shown in FIG. The method for producing high-purity hydrogen chloride of Example 2 is that, in addition to the gas-liquid contacting step, It is almost the same as the production method of the high-purity hydrogen chloride of Example 1. Further, the raw material hydrochloric acid used was the same as that of Example 1. 2, the same or corresponding portions in FIG. 2 are given the same reference numerals as in FIG. 1.
藉由鹽酸導入管16將原料之鹽酸導入二氧化碳擴散塔15內,又藉由氮導入管17導入氮進行逆流接觸(氣液接觸步驟)。二氧化碳擴散塔15之尺寸為直徑500mm、塔高6m,具有填入填充物之填充層。 The hydrochloric acid of the raw material is introduced into the carbon dioxide diffusion column 15 through the hydrochloric acid introduction pipe 16, and nitrogen is introduced into the nitrogen introduction pipe 17 to carry out countercurrent contact (gas-liquid contact step). The carbon dioxide diffusion tower 15 has a size of 500 mm in diameter and a height of 6 m in the column, and has a packed bed filled with a filler.
二氧化碳擴散塔15中,鹽酸係由上方流動至下方,且氮係由下方流動至上方,使兩者逆流接觸。鹽酸之流量為382kg/h(體積流量324NL/h,線速度LV=1.7m/h,空間速度SV=0.28/h),氮之流量為13.4kg/h(體積流量10.7Nm3/h)。因此相對於鹽酸之體積流量的不活性氣體之體積流量的比值為33。 In the carbon dioxide diffusion tower 15, hydrochloric acid flows from the upper side to the lower side, and nitrogen flows from the lower side to the upper side, and the both flow in the countercurrent contact. The flow rate of hydrochloric acid was 382 kg/h (volume flow rate 324 NL/h, linear velocity LV = 1.7 m/h, space velocity SV = 0.28/h), and nitrogen flow rate was 13.4 kg/h (volume flow rate 10.7 Nm 3 /h). Therefore, the ratio of the volume flow rate of the inert gas to the volume flow rate of hydrochloric acid is 33.
由二氧化碳擴散塔15之上方,伴隨4kg/h之鹽酸流失下排出氮,及由下方以378kg/h之流量排出鹽酸。排出之鹽酸的氯化氫濃度為35質量%,不純物中溴化氫之濃度為70質量ppm,二氧化碳之濃度為0.05質量ppm。 From the top of the carbon dioxide diffusion tower 15, nitrogen was discharged with the loss of 4 kg/h of hydrochloric acid, and hydrochloric acid was discharged from the lower side at a flow rate of 378 kg/h. The hydrogen chloride concentration of the discharged hydrochloric acid was 35 mass%, the concentration of hydrogen bromide in the impurity was 70 mass ppm, and the concentration of carbon dioxide was 0.05 mass ppm.
二氧化碳擴散塔15內與不活性氣體進行氣液接觸後之鹽酸係藉由鹽酸送液管21送入蒸餾塔20內,於蒸餾塔20內大氣壓下,以溫度110℃之條件進行蒸餾,由鹽酸分離氯化氫(分離步驟)。 Hydrochloric acid which is in gas-liquid contact with the inert gas in the carbon dioxide diffusion column 15 is sent to the distillation column 20 through the hydrochloric acid liquid supply pipe 21, and is distilled under the atmospheric pressure in the distillation column 20 at a temperature of 110 ° C. Hydrogen chloride is separated (separation step).
蒸餾塔20之塔頂部以61kg/h之流量排出粗氯化氫,及由蒸餾塔20之底部以317kg/h之流量排出藉由餾出氯化氫而稀釋濃度之鹽酸。 The top of the column of the distillation column 20 was discharged with a crude hydrogen chloride at a flow rate of 61 kg/h, and a hydrochloric acid having a diluted concentration by distilling off hydrogen chloride was discharged from the bottom of the distillation column 20 at a flow rate of 317 kg/h.
由蒸餾塔20之塔頂部排出的粗氯化氫之氯化氫濃度為96體積%,不純物中溴化氫之濃度為0.2體積ppm,二氧化碳之濃度為0.4體積ppm。又,由底部排出之鹽酸的氯化氫濃度為23質量%,不純物中溴化氫之濃度為83質量ppm,二氧化碳之濃度為1質量ppm。 The hydrogen chloride concentration of the crude hydrogen chloride discharged from the top of the column of the distillation column 20 was 96% by volume, the concentration of hydrogen bromide in the impurity was 0.2 ppm by volume, and the concentration of carbon dioxide was 0.4 ppm by volume. Further, the concentration of hydrogen chloride discharged from the bottom portion was 23% by mass, the concentration of hydrogen bromide in the impurity was 83 ppm by mass, and the concentration of carbon dioxide was 1 ppm by mass.
因由蒸餾塔20之塔頂部排出的粗氯化氫含有水分,故與實施例1相同藉由凝縮器30及水分吸附塔40進行脫水(脫水步驟)。藉此可以59kg/h之流量得脫水後之粗氯化氫。脫水後之粗氯化氫的氯化氫濃度為99.9體積%。 Since the crude hydrogen chloride discharged from the top of the column of the distillation column 20 contains water, dehydration (dehydration step) is performed by the condenser 30 and the moisture adsorption tower 40 in the same manner as in the first embodiment. Thereby, the crude hydrogen chloride after dehydration can be obtained at a flow rate of 59 kg/h. The hydrogen chloride concentration of the crude hydrogen chloride after dehydration was 99.9% by volume.
藉由氯化氫用配管51由水分吸附塔40將脫水後之粗氯化氫送入壓縮機50內,以壓縮機50施加2.6MPa以上(絕對壓)壓縮而凝縮(液化)。藉由氯化氫用配管61由壓縮機50將液化之粗氯化氫送入蒸餾塔60內,藉由蒸餾各自去除低沸成分及高沸成分再由蒸餾塔中段取出高純度氯化氫(精製步驟)。 The dehydrated crude hydrogen chloride is sent to the compressor 50 by the moisture adsorption tower 40 by the hydrogen chloride charging pipe 40, and is compressed by the compressor 50 by 2.6 MPa or more (absolute pressure) to be condensed (liquefied). The liquefied crude hydrogen chloride is sent to the distillation column 60 by the compressor 50 by the hydrogen chloride pipe 61, and the low-boiling component and the high-boiling component are removed by distillation, and high-purity hydrogen chloride is taken out from the middle of the distillation column (refining step).
詳述而言即,首先為了去除所含之微量重金屬成分,由底部以6kg/h之流量排出高沸成分,其後由塔頂部以0.4kg/h之流量排出含有二氧化碳含量為10體積ppm的濃度99體積%之氯化氫的低沸成分。 In detail, first, in order to remove a trace amount of heavy metal components, a high boiling component is discharged from the bottom at a flow rate of 6 kg/h, and then discharged from the top of the column at a flow rate of 0.4 kg/h, containing a carbon dioxide content of 10 ppm by volume. A low boiling component of 99% by volume of hydrogen chloride.
藉此可由蒸餾塔60之中段以52.6kg/h之流量得純度99.999質量%以上之高純度氯化氫。測定所得高純度氯化氫所含有之不純物濃度,結果溴化氫為0.2體積ppm,二氧化碳為0.4體積ppm。 Thereby, high-purity hydrogen chloride having a purity of 99.999 mass% or more can be obtained from the middle of the distillation column 60 at a flow rate of 52.6 kg/h. The concentration of the impurities contained in the obtained high-purity hydrogen chloride was measured, and as a result, hydrogen bromide was 0.2 volume ppm, and carbon dioxide was 0.4 volume ppm.
除了將二氧化碳擴散塔15之尺寸變更為直徑500mm、塔高1m外,與實施例2相同製造高純度氯化氫。因二氧化碳擴散塔15之尺寸不同,故氣液接觸步驟中鹽酸之流量的空間速度SV為1.7/h。 High-purity hydrogen chloride was produced in the same manner as in Example 2 except that the size of the carbon dioxide diffusion column 15 was changed to a diameter of 500 mm and a column height of 1 m. Since the size of the carbon dioxide diffusion tower 15 is different, the space velocity SV of the flow rate of hydrochloric acid in the gas-liquid contact step is 1.7 / h.
結果可由蒸餾塔60以52.6kg/h之流量得純度99.999質量%以上之高純度氯化氫。測定所得高純度氯化氫所含之不純物濃度,結果溴化氫為0.2體積ppm,二氧化碳為1.1體積ppm。 As a result, high-purity hydrogen chloride having a purity of 99.999 mass% or more can be obtained from the distillation column 60 at a flow rate of 52.6 kg/h. The concentration of the impurities contained in the obtained high-purity hydrogen chloride was measured, and as a result, hydrogen bromide was 0.2 ppm by volume and carbon dioxide was 1.1 ppm by volume.
除了將二氧化碳擴散塔15之尺寸變更為直徑250mm、塔高6m外,與實施例2相同製造高純度氯化氫。因二氧化碳擴散塔15之尺寸不同,故氣液接觸步驟中鹽酸之流量的線速度LV為6.6m/h,空間速度SV為1.1/h。 High-purity hydrogen chloride was produced in the same manner as in Example 2 except that the size of the carbon dioxide diffusion column 15 was changed to a diameter of 250 mm and a column height of 6 m. Since the size of the carbon dioxide diffusion tower 15 is different, the linear velocity LV of the flow rate of hydrochloric acid in the gas-liquid contact step is 6.6 m/h, and the space velocity SV is 1.1/h.
結果可由蒸餾塔60以52.6kg/h之流量得純度99.999質量%以上之高純度氯化氫。測定所得高純度氯化氫所含之不純物濃度,結果溴化氫為0.2體積ppm,二氧化碳為1.5體積ppm。 As a result, high-purity hydrogen chloride having a purity of 99.999 mass% or more can be obtained from the distillation column 60 at a flow rate of 52.6 kg/h. The concentration of the impurities contained in the obtained high-purity hydrogen chloride was measured, and as a result, hydrogen bromide was 0.2 ppm by volume and carbon dioxide was 1.5 ppm by volume.
除了依下述變更分離步驟之內容外,與實施例1相同 製造氯化氫。即,實施例1之分離步驟係藉由蒸餾鹽酸而由鹽酸分離氯化氫得粗氯化氫,但比較例1之分離步驟係使用鹽酸擴散塔取代蒸餾塔20藉由單純加熱鹽酸,而以鹽酸擴散氯化氫得粗氯化氫。鹽酸擴散塔係使用具有填入填充物之填充層之物。擴散條件為塔底溫度110℃、大氣壓下。 Same as in the first embodiment except that the content of the separation step is changed as described below. Produce hydrogen chloride. That is, the separation step of Example 1 was carried out by separating hydrogen chloride from hydrochloric acid to obtain crude hydrogen chloride by distilling hydrochloric acid, but the separation step of Comparative Example 1 was carried out by using a hydrochloric acid diffusion column instead of the distillation column 20 by simply heating hydrochloric acid to dilute hydrogen chloride with hydrochloric acid. Crude hydrogen chloride. The hydrochloric acid diffusion tower uses a material having a packed bed filled with a filler. The diffusion conditions were a column bottom temperature of 110 ° C and atmospheric pressure.
結果由蒸餾塔60以79kg/h之流量得純度99.998質量%以上之氯化氫。測定所得氯化氫所含之不純物濃度,結果溴化氫為4體積ppm,二氧化碳為1.8體積ppm。 As a result, hydrogen chloride having a purity of 99.998 mass% or more was obtained from the distillation column 60 at a flow rate of 79 kg/h. The concentration of the impurities contained in the obtained hydrogen chloride was measured, and as a result, hydrogen bromide was 4 ppm by volume and carbon dioxide was 1.8 ppm by volume.
除了未進行氣液接觸步驟下,直接將原料之鹽酸導入蒸餾塔20內進行蒸餾外,與實施例1相同製造氯化氫。 Hydrogen chloride was produced in the same manner as in Example 1 except that the hydrochloric acid of the raw material was directly introduced into the distillation column 20 to carry out distillation without performing the gas-liquid contact step.
結果由蒸餾塔60以79kg/h之流量得純度99.998質量%以上之氯化氫。測定所得氯化氫所含之不純物濃度,結果溴化氫為0.2體積ppm,二氧化碳為10體積ppm。 As a result, hydrogen chloride having a purity of 99.998 mass% or more was obtained from the distillation column 60 at a flow rate of 79 kg/h. The concentration of the impurities contained in the obtained hydrogen chloride was measured, and as a result, hydrogen bromide was 0.2 volume ppm, and carbon dioxide was 10 volume ppm.
15‧‧‧二氧化碳擴散塔 15‧‧‧Carbon Diffusion Tower
16‧‧‧鹽酸導入管 16‧‧‧ hydrochloric acid introduction tube
17‧‧‧氮導入管 17‧‧‧Nitrogen introduction tube
20‧‧‧蒸餾塔 20‧‧‧Distillation tower
21‧‧‧鹽酸送液管 21‧‧‧ Hydrochloric acid pipe
30‧‧‧凝縮器 30‧‧‧Condenser
31‧‧‧氯化氫用配管 31‧‧‧Pipe for hydrogen chloride
40‧‧‧水分吸附塔 40‧‧‧Water adsorption tower
41‧‧‧氯化氫用配管 41‧‧‧Pipe for hydrogen chloride
50‧‧‧壓縮機 50‧‧‧Compressor
51‧‧‧氯化氫用配管 51‧‧‧Pipe for hydrogen chloride
60‧‧‧蒸餾塔 60‧‧‧Distillation tower
61‧‧‧氯化氫用配管 61‧‧‧Pipe for hydrogen chloride
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015158342 | 2015-08-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201718398A true TW201718398A (en) | 2017-06-01 |
| TWI603917B TWI603917B (en) | 2017-11-01 |
Family
ID=57983128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105125317A TWI603917B (en) | 2015-08-10 | 2016-08-09 | Hydrogen chloride production methods |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10611636B2 (en) |
| EP (1) | EP3336057B1 (en) |
| JP (1) | JP6693963B2 (en) |
| KR (1) | KR102019704B1 (en) |
| CN (1) | CN107848799B (en) |
| TW (1) | TWI603917B (en) |
| WO (1) | WO2017026260A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190096357A (en) * | 2016-12-13 | 2019-08-19 | 아반티움 놀리지 센터 비.브이. | Contaminated Hydrochloric Acid Composition Purification Process |
| EP4185552A1 (en) | 2020-07-22 | 2023-05-31 | SGL Carbon SE | High pressure desorption of hydrogen chloride gas |
| CN113750562A (en) * | 2021-10-12 | 2021-12-07 | 中船重工(邯郸)派瑞特种气体有限公司 | Rectification dehydration equipment for hydrogen bromide electronic gas |
| KR20230058221A (en) | 2021-10-22 | 2023-05-03 | 효성화학 주식회사 | Methode for preparing high-purity hydrogen chloride |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5328398B2 (en) * | 1971-12-13 | 1978-08-14 | ||
| DE2726370C2 (en) | 1977-06-10 | 1981-09-24 | Basf Ag, 6700 Ludwigshafen | Measuring method and measuring device for determining the homogeneity of magnetic dispersions |
| JPS56163452A (en) * | 1980-05-21 | 1981-12-16 | Toshiba Corp | Inorganic carbon remover for total organic carbon analyzer |
| US4349525A (en) * | 1981-04-21 | 1982-09-14 | Chisso Corporation | Process for purifying hydrochloric acid produced from alkali chloride and sulfuric acid |
| JPS589804A (en) * | 1981-07-03 | 1983-01-20 | Asahi Chem Ind Co Ltd | Purifying method of hydrochloric acid |
| JPS6421350A (en) * | 1987-07-17 | 1989-01-24 | Hitachi Ltd | Remover of carbonic acid dissolved in water |
| JPH06345410A (en) * | 1993-06-01 | 1994-12-20 | Kanegafuchi Chem Ind Co Ltd | Production of high-purity hydrochloric acid |
| US5785820A (en) | 1994-01-07 | 1998-07-28 | Startec Ventures, Inc. | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
| CN1082402C (en) * | 1995-06-05 | 2002-04-10 | 斯塔泰克文切斯公司 | On-site generation of ultra-high-purity buffered-HF for semiconductor processing |
| JP3641049B2 (en) * | 1995-12-20 | 2005-04-20 | 鶴見曹達株式会社 | Production method of high purity hydrochloric acid |
| JP2001192202A (en) * | 1999-03-31 | 2001-07-17 | Toyo Eng Corp | Manufacturing method of anhydrous hydrogen chloride |
| JP2003119003A (en) * | 2001-10-09 | 2003-04-23 | Tsurumi Soda Co Ltd | Method and apparatus for purifying hydrogen chloride |
| DE10160598A1 (en) | 2001-12-10 | 2003-06-12 | Basf Ag | Process for the production of largely HBr-free HCl gas and largely HBr-free aqueous HCl solution |
| JP2006063410A (en) * | 2004-08-27 | 2006-03-09 | Toagosei Co Ltd | Method for producing chlorine containing low bromine |
| CN1326766C (en) * | 2004-11-22 | 2007-07-18 | 北京化学试剂研究所 | Apparatus and process of producing electronics level high purity hydrochloric acid |
| US20070261437A1 (en) | 2006-05-12 | 2007-11-15 | Boonstra Eric F | Enhanced process for the purification of anhydrous hydrogen chloride gas |
| JP5141058B2 (en) * | 2007-03-22 | 2013-02-13 | 三菱化学株式会社 | High-purity hydrogen chloride gas production facility, high-purity hydrogen chloride gas production method, high-purity hydrogen chloride gas production facility operation method |
| JP4828474B2 (en) * | 2007-06-13 | 2011-11-30 | 鶴見曹達株式会社 | Salt water purification equipment |
| JP5177360B2 (en) | 2007-06-21 | 2013-04-03 | 住友化学株式会社 | Method for producing hydrogen chloride and method for producing chlorine |
| MY156181A (en) * | 2011-10-11 | 2016-01-15 | Hong In Chemical Co Ltd | Method and system for producing high-purity hydrogen chloride |
| KR101203490B1 (en) * | 2011-11-29 | 2012-11-21 | 홍인화학 주식회사 | A production method and production system for high purity hydrogen chloride |
| JP5955187B2 (en) * | 2012-10-01 | 2016-07-20 | 住友精化株式会社 | Method for producing hydrogen chloride |
| CN204237555U (en) * | 2014-10-23 | 2015-04-01 | 浙江富士特集团有限公司 | A kind of drying installation of hydrogen chloride gas |
| DE102015201446A1 (en) * | 2015-01-28 | 2016-07-28 | Wacker Chemie Ag | Process for the purification of contaminated gaseous hydrogen chloride |
| CN104803357B (en) * | 2015-03-06 | 2017-10-24 | 鲁西化工集团股份有限公司 | A kind of method that high-purity hydrogen chloride is purified in tetrachloro-ethylene device |
-
2016
- 2016-07-25 CN CN201680041774.6A patent/CN107848799B/en active Active
- 2016-07-25 KR KR1020177036358A patent/KR102019704B1/en active Active
- 2016-07-25 EP EP16834957.9A patent/EP3336057B1/en active Active
- 2016-07-25 WO PCT/JP2016/071745 patent/WO2017026260A1/en not_active Ceased
- 2016-07-25 US US15/745,825 patent/US10611636B2/en active Active
- 2016-07-25 JP JP2017534163A patent/JP6693963B2/en active Active
- 2016-08-09 TW TW105125317A patent/TWI603917B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107848799A (en) | 2018-03-27 |
| JP6693963B2 (en) | 2020-05-13 |
| EP3336057A1 (en) | 2018-06-20 |
| CN107848799B (en) | 2020-07-17 |
| EP3336057B1 (en) | 2019-04-10 |
| US10611636B2 (en) | 2020-04-07 |
| JPWO2017026260A1 (en) | 2018-05-31 |
| KR102019704B1 (en) | 2019-09-09 |
| WO2017026260A1 (en) | 2017-02-16 |
| KR20180008735A (en) | 2018-01-24 |
| US20180208465A1 (en) | 2018-07-26 |
| TWI603917B (en) | 2017-11-01 |
| EP3336057A4 (en) | 2018-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102567679B1 (en) | Separation of streams containing phosgene and hydrogen chloride | |
| TWI603917B (en) | Hydrogen chloride production methods | |
| JP6876849B2 (en) | Method for producing hydrogen chloride | |
| CN101634515B (en) | Method for extracting high-yield pure krypton and pure xenon by full distillation | |
| JP4308810B2 (en) | Method for producing chlorine gas, sodium hypochlorite aqueous solution and liquid chlorine | |
| TWI457285B (en) | Method for driving high purity chlorine | |
| JP2003128412A (en) | Method for purifying silicon tetrafluoride | |
| JP7412657B1 (en) | Method for producing high purity hydrochloric acid | |
| CN112279234B (en) | Azeotropic composition of carbonyl fluoride and carbon dioxide | |
| JPS5992903A (en) | Removal of bromine in chlorine | |
| JP2011016686A (en) | Method for refining carbonyl difluoride | |
| US3230692A (en) | Separation of vinyl fluoride and acetylene | |
| CN111704108A (en) | Continuous production process of high-purity chlorine | |
| JP2020070224A (en) | Method for manufacturing hydrogen chloride |