TW201543600A - Apparatus for heat processing - Google Patents
Apparatus for heat processing Download PDFInfo
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- TW201543600A TW201543600A TW104108295A TW104108295A TW201543600A TW 201543600 A TW201543600 A TW 201543600A TW 104108295 A TW104108295 A TW 104108295A TW 104108295 A TW104108295 A TW 104108295A TW 201543600 A TW201543600 A TW 201543600A
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- 238000012545 processing Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 238000010438 heat treatment Methods 0.000 claims description 104
- 239000006185 dispersion Substances 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Furnace Details (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明是關於一種熱處理裝置，詳言之，是關於一種在本體內部配置加熱器單元並藉由將基板直接地加熱以提升急速熱處理步驟的效率性之熱處理裝置。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a heat treatment apparatus, and more particularly to a heat treatment apparatus in which a heater unit is disposed inside a body and the efficiency of the rapid heat treatment step is enhanced by directly heating the substrate.
在平板顯示器、半導體、太陽電池等的製造中被使用的退火(annealing)裝置是負責為了對在如矽晶圓或玻璃之基板上蒸鍍有預定的薄膜進行結晶化、相變化等步驟而必須之熱處理階段的裝置。為了執行熱處理步驟，可加熱形成有預定薄膜之基板的熱處理裝置是必要的。通常，熱處理裝置中具有可對1個基板執行熱處理的單片式與可對複數個基板執行熱處理分批式。 An annealing device used in the manufacture of a flat panel display, a semiconductor, a solar cell, or the like is required to perform steps such as crystallization, phase change, and the like for depositing a predetermined film on a substrate such as a wafer or glass. The device in the heat treatment stage. In order to perform the heat treatment step, a heat treatment device that heats the substrate on which the predetermined film is formed is necessary. Generally, a heat treatment apparatus has a one-piece type in which heat treatment can be performed on one substrate and a heat treatment batch type on a plurality of substrates.
熱處理方法之中，急速熱處理法(rapid thermal annealing：RTA)因可使基板的溫度迅速到達熱處理溫度，而可顯著地減少熱消耗費用(thermal budget)，以及在熱處理過程中可防止雜質的汙染以及該雜質之不需要的擴散等優點而被廣泛使用。 Among the heat treatment methods, rapid thermal annealing (RTA) can significantly reduce the thermal budget due to the rapid temperature of the substrate, and can prevent contamination of impurities during heat treatment. This impurity is widely used because of its advantages such as unnecessary diffusion.
使用急速熱處理法之以往的單片式熱處理裝置 包含本體、加熱器、以及升降單元等，該本體是提供腔室作為執行基板的加熱之空間，該加熱器配置於本體外側並加熱腔室，該升降單元使基板升降。此類以往的單片式熱處理裝置揭露於韓國專利公報第2011-0001460號。 Conventional monolithic heat treatment apparatus using rapid heat treatment The utility model comprises a body, a heater, a lifting unit and the like, wherein the body is a space for providing heating of the substrate as the execution substrate, the heater is disposed outside the body and heating the chamber, and the lifting unit lifts and lowers the substrate. Such a conventional one-piece heat treatment apparatus is disclosed in Korean Patent Laid-Open No. 2011-0001460.
以往的單片式熱處理裝置由於加熱器被配置於本體外部，為了使加熱器產生的熱傳達至腔室，可使用於本體的材質很有限。因此，雖然本體的材質主要是使用石英(Quartz)材質，但石英材質的本體具有以下問題：要加工成具有可收容近來大面積化的基板之程度的大小十分困難。 In the conventional monolithic heat treatment apparatus, since the heater is disposed outside the main body, the material used for the main body can be limited in order to transmit the heat generated by the heater to the chamber. Therefore, although the material of the main body is mainly made of quartz (Quartz) material, the body of the quartz material has a problem that it is difficult to process it to a size that can accommodate a substrate having a large area.
又，以往的單片式熱處理裝置由於加熱器被配置於本體外部，因此具有不容易使收容大面積基板之腔室內部的溫度在短時間內上升，以及腔室內部的溫度均一性較低之問題。 Moreover, since the conventional monolithic heat treatment apparatus is disposed outside the main body of the heater, it is not easy to raise the temperature inside the chamber in which the large-area substrate is accommodated in a short period of time, and the temperature uniformity inside the chamber is low. problem.
【專利文獻1】韓國專利公報第2011-0001460號 [Patent Document 1] Korean Patent Gazette No. 2011-0001460
因此，本發明是為了解決如上述之先前技術的問題而提出者，以提供一種加熱器單元配置於本體內部而使腔室內部的溫度均一性增大之熱處理裝置為其目的。 Accordingly, the present invention has been made in order to solve the problems of the prior art as described above, and to provide a heat treatment apparatus in which a heater unit is disposed inside a body to increase the temperature uniformity inside the chamber.
又，本發明以提供一種以金屬作為本體材質，並 可容易地製作出可收容大面積基板，且堅固、提高熱反射率之熱處理裝置為其目的。 Moreover, the present invention provides a metal as a body material, and It is possible to easily produce a heat treatment apparatus which can accommodate a large-area substrate and which is strong and has a high heat reflectance.
又，本發明以提供一種加熱器單元配置成接近本體內部的基板，並藉由將熱直接傳達至基板而可更迅速地執行急速熱處理步驟之熱處理裝置為其目的。 Further, the present invention has an object of providing a heat treatment apparatus in which a heater unit is disposed close to a substrate inside the body and the heat treatment step can be performed more quickly by directly transferring heat to the substrate.
為了達成上述目的，本發明之一實施形態之熱處理裝置，其特徵在於包含：本體，包含作為基板的熱處理空間的腔室，升降單元，上下運動並支持前述基板，及加熱器單元，配置於前述本體的內側上部及內側下部。 In order to achieve the above object, a heat treatment apparatus according to an embodiment of the present invention includes a main body including a chamber as a heat treatment space of a substrate, a lifting unit that moves up and down to support the substrate, and a heater unit, and is disposed in the foregoing The inner upper part and the inner lower part of the body.
藉由如上述構成之本發明，加熱器單元配置於本體內部而可提升腔室內部的溫度均一性。 According to the invention constructed as described above, the heater unit is disposed inside the body to improve the temperature uniformity inside the chamber.
又，藉由本發明，以金屬作為本體材質，並可容易地製作出可收容大面積基板，且可使之堅固、提高熱反射率。 Moreover, according to the present invention, metal is used as the main material, and a large-area substrate can be easily produced, and it can be made strong and the heat reflectance can be improved.
又，藉由本發明，加熱器單元配置成接近本體內部的基板，並藉由將熱直接傳達至基板而可更迅速地執行急速熱處理步驟。 Further, with the present invention, the heater unit is disposed close to the substrate inside the body, and the rapid heat treatment step can be performed more quickly by directly transferring heat to the substrate.
20‧‧‧基板 20‧‧‧Substrate
100‧‧‧熱處理裝置 100‧‧‧ Heat treatment unit
110‧‧‧本體 110‧‧‧ body
111‧‧‧出入口 111‧‧‧ entrances and exits
115‧‧‧門 115‧‧‧
120‧‧‧加熱器單元 120‧‧‧heater unit
121‧‧‧第1上部加熱器單元 121‧‧‧1st upper heater unit
122、122a、122b、122c‧‧‧第2 上部加熱器單元 122, 122a, 122b, 122c‧‧‧ 2nd Upper heater unit
123‧‧‧下部加熱器單元 123‧‧‧ Lower heater unit
125‧‧‧單位加熱器 125‧‧‧Unit heater
130‧‧‧升降單元 130‧‧‧ Lifting unit
131‧‧‧升降桿 131‧‧‧ Lifting rod
132‧‧‧基板支持部 132‧‧‧Substrate Support Department
133‧‧‧基板支持銷 133‧‧‧Substrate support pin
141、142、143‧‧‧隔熱部 141, 142, 143‧ ‧ insulation
150‧‧‧氣體供給管 150‧‧‧ gas supply pipe
151‧‧‧氣體供給孔 151‧‧‧ gas supply hole
155‧‧‧分散板 155‧‧‧Distribution board
155a‧‧‧分散孔 155a‧‧‧Distributed holes
160‧‧‧輔助氣體供給孔 160‧‧‧Auxiliary gas supply hole
TC‧‧‧上部腔室區域 TC‧‧‧ upper chamber area
BC‧‧‧下部腔室區域 BC‧‧‧lower chamber area
圖1是表示與本發明之一實施形態相關的熱處理裝置之構成的立體圖。 Fig. 1 is a perspective view showing a configuration of a heat treatment apparatus according to an embodiment of the present invention.
圖2是表示與本發明之一實施形態相關的熱處理裝置之構成的正面截面圖。 Fig. 2 is a front sectional view showing the configuration of a heat treatment apparatus according to an embodiment of the present invention.
圖3是表示與本發明之一實施形態相關的熱處理裝置之構成的側面截面圖。 Fig. 3 is a side cross-sectional view showing the configuration of a heat treatment apparatus according to an embodiment of the present invention.
圖4是表示與本發明之一實施形態相關的加熱器單元之構成的分解立體圖。 Fig. 4 is an exploded perspective view showing the configuration of a heater unit according to an embodiment of the present invention.
圖5是表示與本發明之一實施形態相關的第2上部加熱器單元之構成的平面截面圖。 Fig. 5 is a plan sectional view showing a configuration of a second upper heater unit according to an embodiment of the present invention.
圖6~圖9是表示與本發明之一實施形態相關的熱處理裝置之動作過程的側面截面圖。 6 to 9 are side cross-sectional views showing the operation of the heat treatment apparatus according to an embodiment of the present invention.
後述之對本發明的詳細說明是參照將可實施本發明之特定實施形態作為示例而以圖表示之附加圖式。這些實施形態將被充分地詳細說明以使該技術領域之具有通常知識者可實施本發明。雖然本發明之多樣的實施形態互相不同，但應理解沒有互相排他性的必要。例如，記載於此的特定形狀、構造、及特性與一實施形態相關並可不脫離本發明的精神及範圍而在其他實施形態實現。又，應理解所揭露之各個實施形態內的個別構成要素之位置或配置可不脫離本發明的精神及範圍而變更。因此，後述之詳細的說明並非作為限定性的意思，只要適當的說明，本發明的範圍為該請求項所主張之均等全部範圍並僅由附加之請求項來限定。在圖式中，類似的參考符號在各個方面指同一或類似的機能，有時長度及面積、厚度等以及其形態會為了方便而被誇張表現。 The detailed description of the present invention will be described below with reference to the accompanying drawings. These embodiments are described in sufficient detail to enable those of ordinary skill in the art to practice the invention. Although the various embodiments of the present invention are different from each other, it should be understood that there is no need for mutual exclusivity. For example, the specific shapes, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention. Further, it is to be understood that the position and arrangement of the individual components in the various embodiments disclosed herein may be modified without departing from the spirit and scope of the invention. Therefore, the detailed description is not intended to be limiting, and the scope of the present invention is to be construed as limited by the appended claims. In the drawings, like reference characters refer to the same or similar functions in various aspects, and sometimes the length and the area, the thickness, etc., and the form thereof are exaggerated for convenience.
本說明書中，基板可理解為包含使用於LED、LCD等之顯示裝置之基板、半導體基板、太陽能電池基板等的意思。 In the present specification, the substrate can be understood to include a substrate, a semiconductor substrate, a solar cell substrate, or the like used for a display device such as an LED or an LCD.
又，本說明書中揭示雖然假設熱處理裝置100為急速(RTA)熱處理裝置而說明，但也可應用於其他的熱處理裝置。 Further, although the present specification discloses that the heat treatment apparatus 100 is described as a rapid (RTA) heat treatment apparatus, it can be applied to other heat treatment apparatuses.
又，本說明書中揭示雖然假設熱處理裝置100為單片式熱處理裝置而說明，但只要追加而配設舟皿之構成並使之升降，也可應用於收容複數片基板20的分批式熱處理裝置。 In addition, although the heat treatment apparatus 100 is described as a single-piece heat treatment apparatus, it is also applicable to a batch type heat treatment apparatus that accommodates a plurality of substrates 20 as long as the structure of the boat is added and raised and lowered. .
以下，參照附加的圖式詳細說明與本發明之實施形態相關的熱處理裝置。 Hereinafter, a heat treatment apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
圖1是表示與本發明之一實施形態相關的熱處理裝置100之構成的立體圖，圖2是表示與本發明之一實施形態相關的熱處理裝置100之構成的正面截面圖，圖3是表示與本發明之一實施形態相關的熱處理裝置100之構成的側面截面圖。 1 is a perspective view showing a configuration of a heat treatment apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a front cross-sectional view showing a configuration of a heat treatment apparatus 100 according to an embodiment of the present invention, and FIG. 3 is a view showing the configuration of the heat treatment apparatus 100. A side cross-sectional view showing a configuration of a heat treatment apparatus 100 according to an embodiment of the present invention.
首先，並沒有特別限制被裝載於熱處理裝置100的基板20的材質，玻璃、塑膠、聚合物、矽晶圓等，可裝載多樣材質的基板20。以下假設為平面顯示裝置中一般最常使用的矩形玻璃基板進行說明。雖然以熱處理裝置100處理之基板20的大小沒有限制，此處假設為1500mm×1850mm、2200mm×2500mm之大面積基板20進行說明。 First, the material of the substrate 20 to be mounted on the heat treatment apparatus 100, glass, plastic, polymer, germanium wafer, or the like is not particularly limited, and the substrate 20 of various materials can be mounted. The following assumptions are made for a rectangular glass substrate which is generally used most commonly in a flat display device. Although the size of the substrate 20 processed by the heat treatment apparatus 100 is not limited, a large-area substrate 20 of 1500 mm × 1850 mm and 2200 mm × 2500 mm is assumed here.
參照圖1至圖3，本發明之熱處理裝置100包含： 本體110，包含作為基板20的熱處理空間的腔室TC、BC、升降單元130，一邊上下運動一邊支持基板20、及加熱器單元120，配置於本體110的內側上部及內側下部。 Referring to Figures 1 to 3, the heat treatment apparatus 100 of the present invention comprises: The main body 110 includes chambers TC and BC and a lifting unit 130 as heat treatment spaces of the substrate 20, and supports the substrate 20 and the heater unit 120 while moving up and down, and is disposed on the inner upper portion and the lower portion of the main body 110.
本體110形成為略長方體形狀並成為熱處理裝置100的外觀，本體110的內部可形成作為熱處理基板20的空間之腔室TC、BC。本體110可依據基板20的形狀而形成為多樣的形狀，而不僅限於長方體。 The body 110 is formed in a substantially rectangular parallelepiped shape and serves as an appearance of the heat treatment apparatus 100, and the inside of the body 110 can form chambers TC, BC which are spaces for heat-treating the substrate 20. The body 110 can be formed into various shapes depending on the shape of the substrate 20, and is not limited to a rectangular parallelepiped.
腔室TC、BC可設置於密閉的空間，可包含對基板20在第1溫度進行熱處理之上部腔室區域TC以及對基板20在第2溫度進行熱處理之下部腔室區域BC。在此，上部腔室區域TC以及下部腔室區域BC可以不是物理性地嚴格分離的空間，可理解為藉由第1溫度、第2溫度的範圍而被分離的假想空間。換言之，上部腔室區域TC可表示藉由後述之升降單元130使基板20在上升的狀態下[基板20處於上死點之位置的狀態]被進行熱處理的空間，下部腔室區域BC可表示藉由升降單元130使基板20在下降的狀態下[基板20處於下死點之位置的狀態]被進行熱處理的空間。 The chambers TC, BC may be disposed in a sealed space, and may include a heat treatment of the upper chamber region TC of the substrate 20 at the first temperature and a lower heat treatment of the substrate 20 at the second temperature. Here, the upper chamber region TC and the lower chamber region BC may not be spaces that are physically separated strictly, and may be understood as a virtual space that is separated by the range of the first temperature and the second temperature. In other words, the upper chamber region TC can represent a space in which the substrate 20 is subjected to heat treatment in a state in which the substrate 20 is in an ascending state (a state in which the substrate 20 is at the top dead center) by the elevating unit 130, and the lower chamber region BC can represent A space in which the substrate 20 is subjected to heat treatment in a state where the substrate 20 is lowered in a lowered state (a state in which the substrate 20 is at the bottom dead center).
在上部腔室區域TC基板20可急速熱處理至第1溫度。作為被急速熱處理的溫度之第1溫度可比做為預熱溫度[待機溫度]之第2溫度高。第1溫度宜為500℃至800℃，使基板20在數秒乃至述分鐘之短時間內被急速熱處理。 The TC substrate 20 can be rapidly heat treated to the first temperature in the upper chamber region. The first temperature which is the temperature to be rapidly heat-treated can be higher than the second temperature which is the preheating temperature [standby temperature]. The first temperature is preferably from 500 ° C to 800 ° C, and the substrate 20 is rapidly heat treated in a short time of several seconds or even minutes.
在下部腔室區域TC基板20可在急速熱處理之前預熱至第2溫度。第2溫度宜為200℃至300℃。 In the lower chamber region, the TC substrate 20 can be preheated to the second temperature before the rapid heat treatment. The second temperature is preferably from 200 ° C to 300 ° C.
圖4是表示與本發明之一實施形態相關的加熱器 單元120之構成的分解立體圖。 Figure 4 is a view showing a heater related to an embodiment of the present invention An exploded perspective view of the configuration of unit 120.
參照圖1至圖4，本發明之加熱器單元120之特徵在於配置於本體110的內側。由於藉由使加熱器單元120配置於本體110的內側可使熱直接傳達至基板20，因此具有可更迅速地執行急速熱處理步驟之優點。 Referring to FIGS. 1 through 4, the heater unit 120 of the present invention is characterized in that it is disposed on the inner side of the body 110. Since the heat can be directly transmitted to the substrate 20 by disposing the heater unit 120 on the inner side of the body 110, there is an advantage that the rapid heat treatment step can be performed more quickly.
加熱器單元120包含：上部加熱器單元121、122，配置於上部腔室區域TC[或本體110的內側上部]之至少一側，下部加熱器單元123，配置於下部腔室區域BC[或本體110的內側下部]之至少一側。 The heater unit 120 includes: upper heater units 121 and 122 disposed at least one side of the upper chamber region TC [or the inner upper portion of the body 110], and the lower heater unit 123 disposed at the lower chamber region BC [or the body At least one side of the inner lower portion of the 110.
為了將上部腔室區域TC與下部腔室區域BC各自加熱，宜將上部加熱器單元121、122與下部加熱器單元123隔離。 In order to heat the upper chamber region TC and the lower chamber region BC, respectively, it is preferable to isolate the upper heater units 121, 122 from the lower heater unit 123.
加熱器單元120可包含複數個單位加熱器125。單位加熱器125為通常長度的長形棒狀之加熱器，可為構成下述加熱器單元120之單位體，該加熱器單元120於石英管的內部插入有發熱體，透過設置於端部的端子接受外部電源的施加而產生熱。單位加熱器125的個數並不限定於圖1至圖4中所圖示之個數，可依據本體110之大小以及基板20的大小多樣地變更。 The heater unit 120 can include a plurality of unit heaters 125. The unit heater 125 is an elongated rod-shaped heater of a normal length, and may be a unit body constituting a heater unit 120 in which a heating element is inserted inside the quartz tube and transmitted through the end portion. The terminal receives heat from application of an external power source. The number of unit heaters 125 is not limited to the number shown in FIGS. 1 to 4, and can be variously changed depending on the size of the main body 110 and the size of the substrate 20.
上部加熱器單元121可包含加熱上部腔室區域TC之上表面的第1上部加熱器單元121及加熱上部腔室區域TC之側面的第2上部加熱器單元122(122a、122b、122c)。 The upper heater unit 121 may include a first upper heater unit 121 that heats the upper surface of the upper chamber region TC and a second upper heater unit 122 (122a, 122b, 122c) that heats the side of the upper chamber region TC.
由於上部腔室區域TC是將基板20急速熱處理的空間，因此宜配置比作為預熱基板20的空間之下部腔室區 域BC還要多個數的單位加熱器125。因此，藉由以第1上部加熱器單元121加熱上部腔室區域TC之上表面，並以第2上部加熱器單元122加熱上部腔室區域BC之4個側面，具有可提高加熱速度，維持高溫區域，甚至可確保溫度均一性之優點。 Since the upper chamber region TC is a space for rapidly heat-treating the substrate 20, it is preferable to arrange a lower chamber portion than the space as the preheating substrate 20. The field BC also has a plurality of unit heaters 125. Therefore, by heating the upper surface of the upper chamber region TC by the first upper heater unit 121 and heating the four side surfaces of the upper chamber region BC by the second upper heater unit 122, the heating rate can be increased and the temperature can be maintained. The area even ensures the advantages of temperature uniformity.
第1上部加熱器單元121以及下部加熱器單元123由於沒有干涉基板20升降的路徑之虞，因此可配置於上部腔室區域TC之上表面與下部腔室區域BC下表面之整面。因此，第1上部加熱器單元121以及下部加熱器單元123可使複數個單位加熱器125與基板20的短邊方向平行地隔著一定間隔而配置。因此，第1上部加熱器單元121以及下部加熱器單元123之單位加熱器125的兩端可與本體110的側面連結。亦即，可以貫通本體110的形狀配置。 Since the first upper heater unit 121 and the lower heater unit 123 do not interfere with the path in which the substrate 20 moves up and down, they can be disposed on the entire upper surface of the upper chamber region TC and the lower surface of the lower chamber region BC. Therefore, the first upper heater unit 121 and the lower heater unit 123 can arrange the plurality of unit heaters 125 at a predetermined interval in parallel with the short-side direction of the substrate 20. Therefore, both ends of the unit heater 125 of the first upper heater unit 121 and the lower heater unit 123 can be coupled to the side surface of the body 110. That is, it can be disposed through the shape of the body 110.
圖5是表示與本發明之一實施形態相關的第2上部加熱器單元122之構成的平面截面圖。 Fig. 5 is a plan sectional view showing the configuration of a second upper heater unit 122 according to an embodiment of the present invention.
參照圖4及圖5，第2上部加熱器單元122可構成為複數層而加熱上部腔室區域TC的4個側面。本說明書中構成3個層(122a、122b、122c)，但並非受限於此，在可覆蓋上部腔室區域TC並加熱的範圍內可調整其個數。 Referring to FIGS. 4 and 5, the second upper heater unit 122 may be configured as a plurality of layers to heat the four side faces of the upper chamber region TC. In the present specification, three layers (122a, 122b, and 122c) are formed, but are not limited thereto, and the number thereof can be adjusted within a range in which the upper chamber region TC can be covered and heated.
由於第2上部加熱器單元122可干涉基板20升降的路徑，因此可配置成不占有基板20升降之空間而包圍上部腔室區域TC的側面。亦即，如圖5所示，第2上部加熱器單元122之各層(122a、122b、122c)可為平行於基板20的4個邊，且與基板20間隔預定距離，並使4個單位加熱器125 成為1個組。構成第2上部加熱器單元122的單位加熱器125可為僅一端連結於本體110的側面，另一端位於除了基板20升降時佔有的空間以外之上部腔室區域TC內。亦即，可配置成如懸臂形狀之僅一端連結於本體110之形狀。 Since the second upper heater unit 122 can interfere with the path in which the substrate 20 is moved up and down, it can be disposed so as to surround the side surface of the upper chamber region TC without occupying the space in which the substrate 20 is moved up and down. That is, as shown in FIG. 5, the layers (122a, 122b, 122c) of the second upper heater unit 122 may be parallel to the four sides of the substrate 20, and spaced apart from the substrate 20 by a predetermined distance, and heat the four units. 125 Become a group. The unit heater 125 constituting the second upper heater unit 122 may have one end connected to the side surface of the main body 110, and the other end of which is located in the upper chamber region TC except for the space occupied when the substrate 20 is moved up and down. That is, it can be configured such that only one end of the cantilever shape is coupled to the shape of the body 110.
第2上部加熱器單元122之各層(122a、122b、122c)可互相交互配置，以抑制在上部腔室區域TC的側面之熱損失而可更加確保溫度均一性。亦即，第2上部加熱器單元122a及122c可使4個懸臂形態之單位加熱器125配置成如圖5(a)之順時針方向形態，第2上部加熱器單元122b可使4個懸臂形態之單位加熱器125配置成如圖5(b)之逆時針方向形態。 The layers (122a, 122b, 122c) of the second upper heater unit 122 are alternately arranged to each other to suppress heat loss in the side surface of the upper chamber region TC, and temperature uniformity can be further ensured. In other words, the second upper heater units 122a and 122c can arrange the unit heaters 125 of the four cantilever forms in the clockwise direction as shown in Fig. 5(a), and the second upper heater unit 122b can have the four cantilever forms. The unit heater 125 is arranged in a counterclockwise direction as shown in Fig. 5(b).
如上所述，本發明不僅使加熱器單元120配置於本體110的內側，而將熱直接傳達至基板20，也具有在實際執行急速熱處理的上部腔室區域TC之上部與4個側面配置上部加熱器單元121、122而可將熱傳達至含括基板20的全面積，可在確保腔室TC、BC內部溫度均一性的狀態下迅速地執行急速熱處理步驟之優點。 As described above, the present invention not only causes the heater unit 120 to be disposed inside the body 110 but also directly transfers heat to the substrate 20, and also has an upper portion and an upper portion of the upper chamber region TC where the rapid heat treatment is actually performed. The units 121 and 122 can transfer heat to the entire area including the substrate 20, and the advantage of the rapid heat treatment step can be quickly performed while ensuring temperature uniformity inside the chambers TC and BC.
另一方面，本體110可用金屬材質形成。金屬可使用不鏽鋼(SUS)、鋼(Steel)、鋁(Al)、鈦(Ti)、鈦合金、Si-DLC(Silicon-Diamondlike Carbon)等，若考慮費用與加工的方便性，宜為不鏽鋼(SUS)。若以金屬材質製作本體110，便可藉由熔接或固定機構結合等方法製作本體110，因此製作成可收容大面積基板20大尺寸較為容易，除了較堅固以外，由於可藉由金屬特有的反射性反射加熱器 單元120產生的熱而加熱腔室TC、BC，因此具有熱處理步驟的效率性增加之優點。 On the other hand, the body 110 can be formed of a metal material. Stainless steel (SUS), steel (Steel), aluminum (Al), titanium (Ti), titanium alloy, Si-DLC (Silicon-Diamondlike Carbon), etc. can be used as the metal. If cost and processing convenience are considered, it is preferably stainless steel ( SUS). If the main body 110 is made of a metal material, the main body 110 can be formed by welding or fixing mechanism, etc., so that it is easy to accommodate a large-area substrate 20, and in addition to being strong, it can be reflected by metal. Reflex heater The heat generated by unit 120 heats chambers TC, BC, thus having the advantage of increased efficiency of the heat treatment step.
又，參照圖2及圖3，升降單元130可包含：升降桿131、基板支持部132、基板支持銷133。 2 and 3, the lifting unit 130 may include a lifting rod 131, a substrate supporting portion 132, and a substrate supporting pin 133.
升降桿131係其中一側位於腔室TC、BC的內部，另一側位於腔室TC、BC的外部，並設置成可升降。升降桿131可與汽缸、馬達等驅動機構(未圖示)連結以使升降桿131可升降。升降桿131可位於下部加熱器單元123的單位加熱器125之間而以不干涉周圍的方式升降。可於使升降桿131可升降地連通之本體110的下部面夾有密封構件(未圖示)。 The lifting rod 131 has one side located inside the chambers TC, BC and the other side outside the chambers TC, BC and is arranged to be movable up and down. The lifting rod 131 can be coupled to a driving mechanism (not shown) such as a cylinder or a motor to raise and lower the lifting rod 131. The lifting rod 131 may be located between the unit heaters 125 of the lower heater unit 123 to be lifted and lowered without interfering with the surroundings. A sealing member (not shown) may be interposed between the lower surface of the body 110 that allows the lifting rod 131 to be vertically connected.
基板支持部132結合於升降桿131的一側並可支持基板20。基板支持部132可具有板或框架形狀，且可在基板支持部132上形成將基板20接點支持之複數個基板支持銷133以使與基板20的接觸面積可最小化。 The substrate supporting portion 132 is coupled to one side of the lifting rod 131 and can support the substrate 20. The substrate supporting portion 132 may have a plate or frame shape, and a plurality of substrate supporting pins 133 that support the substrate 20 in contact may be formed on the substrate supporting portion 132 to minimize the contact area with the substrate 20.
升降單元130上升而位於上死點時，在基板支持銷133之上被接點支持的基板20位於上部腔室區域TC而可被上部加熱器單元121、122急速熱處理。升降單元130下降而位於下死點時，在基板支持銷133之上被接點支持的基板20位於下部腔室區域BC而可被下部加熱器單元123預熱，或是冷卻，或是被放置處於待機狀態。 When the lifting unit 130 is raised and is at the top dead center, the substrate 20 supported by the contacts on the substrate supporting pin 133 is located in the upper chamber region TC and can be rapidly heat-treated by the upper heater units 121 and 122. When the lifting unit 130 is lowered and is at the bottom dead center, the substrate 20 supported by the contacts on the substrate supporting pin 133 is located in the lower chamber region BC and can be preheated by the lower heater unit 123, or cooled, or placed. In standby mode.
下部腔室區域BC的前面[本體110的下部前面]可形成有可供基板20出入之出入口111，出入口111可藉由以固定軸為基準而擺動之門115來開關。出入口111與門115之 間可夾有密封構件(未圖示)。 The front surface of the lower chamber region BC [the lower front surface of the body 110] may be formed with an inlet and outlet 111 for the substrate 20 to enter and exit, and the inlet and outlet 111 may be opened and closed by a gate 115 that swings with respect to the fixed axis. Entrance and exit 111 and door 115 A sealing member (not shown) may be interposed therebetween.
本體110的內側面[或腔室TC、BC的側面]與加熱器單元120之間夾有隔熱部141、142、143，而可減少腔室TC、BC內部的熱損失並提高熱處理步驟的效率性。隔熱部141、142、143宜為陶瓷材質之物。 The inner side surface of the body 110 [or the side surface of the chambers TC, BC] and the heater unit 120 sandwich the heat insulating portions 141, 142, 143, thereby reducing heat loss inside the chambers TC, BC and improving the heat treatment step. Efficiency. The heat insulating portions 141, 142, and 143 are preferably made of a ceramic material.
另一方面，熱處理裝置100可更包含設置成貫通本體110的上表面，並向腔室TC、BC供給熱處理氣體的氣體供給管150。熱處理氣體由外部的氣體供給裝置(未圖示)傳達至氣體供給管150並通過氣體供給孔151供給至腔室TC、BC。 On the other hand, the heat treatment apparatus 100 may further include a gas supply pipe 150 that is provided to penetrate the upper surface of the body 110 and supply the heat treatment gas to the chambers TC and BC. The heat treatment gas is transmitted to the gas supply pipe 150 by an external gas supply device (not shown) and supplied to the chambers TC, BC through the gas supply hole 151.
通過氣體供給孔151供給的熱處理氣體可藉由分散板155被分散而供給至腔室TC、BC的內部。分散板155可配置於第1上部加熱器單元121與第2上部加熱器單元122之間。在分散板155上可連通地形成具有一定間隔之複數個分散孔155a。通過氣體吐出孔151供給之熱處理氣體在分散板155的上部之腔室TC區域初步地廣泛分散後，通過分散孔155a均一地供給至腔室TC、BC的內部並可在急速熱處理步驟中利用。 The heat treatment gas supplied through the gas supply hole 151 can be supplied to the inside of the chambers TC, BC by being dispersed by the dispersion plate 155. The dispersion plate 155 can be disposed between the first upper heater unit 121 and the second upper heater unit 122. A plurality of dispersion holes 155a having a certain interval are formed in communication on the dispersion plate 155. The heat treatment gas supplied through the gas discharge hole 151 is initially widely dispersed in the chamber TC region of the upper portion of the dispersion plate 155, and then uniformly supplied to the inside of the chambers TC, BC through the dispersion holes 155a and can be utilized in the rapid heat treatment step.
再次參照圖1，本體110的側面，具體來說是本體110的下部側面可形成將熱處理氣體供給至下部腔室區域BC之複數個輔助氣體供給孔160。通過輔助氣體供給孔160供給之熱處理氣體可於基板20的預熱或冷卻中利用。 Referring again to FIG. 1, the side of the body 110, and in particular the lower side of the body 110, may form a plurality of auxiliary gas supply holes 160 for supplying a heat treatment gas to the lower chamber region BC. The heat treatment gas supplied through the assist gas supply hole 160 can be utilized in preheating or cooling of the substrate 20.
圖6至圖9是表示與本發明之一實施形態相關的熱處理裝置之動作過程的側面截面圖。 6 to 9 are side cross-sectional views showing the operation of the heat treatment apparatus according to an embodiment of the present invention.
參照圖6，首先擺動門115而開放出入口111。此時升降單元130位於下死點。接著，使用基板移送臂(未圖示)在外部將基板20裝載於下部腔室區域BC後，使基板支持銷133與基板20的下部面接點支持。 Referring to Fig. 6, first, the door 115 is swung to open the entrance 111. At this time, the lifting unit 130 is located at the bottom dead center. Next, after the substrate 20 is externally mounted on the lower chamber region BC by using a substrate transfer arm (not shown), the substrate support pin 133 is supported by the lower surface of the substrate 20.
接著，參照圖7，藉由擺動門115而關閉出入口111使腔室TC、BC密閉。透過過氣體供給孔151與輔助氣體供給孔160，熱處理氣體被供給至腔室TC、BC的內部而形成熱處理環境，並向加熱器單元120施加電力以產生熱。特別是，控制下部加熱器單元123以維持可在下部腔室區域BC預熱基板20的溫度之200℃至300℃(第2溫度)。上部加熱器單元121、122維持為可在上部腔室區域TC將基板20急速熱處理的溫度之500℃至800℃(第1溫度)。 Next, referring to Fig. 7, the opening and closing port 111 is closed by swinging the door 115 to seal the chambers TC, BC. Through the gas supply hole 151 and the assist gas supply hole 160, the heat treatment gas is supplied to the inside of the chambers TC, BC to form a heat treatment environment, and electric power is applied to the heater unit 120 to generate heat. Specifically, the lower heater unit 123 is controlled to maintain 200 ° C to 300 ° C (second temperature) at which the temperature of the substrate 20 can be preheated in the lower chamber region BC. The upper heater units 121 and 122 are maintained at a temperature of 500 ° C to 800 ° C (first temperature) at a temperature at which the substrate 20 can be rapidly heat-treated in the upper chamber region TC.
接著，參照圖8，使升降單元130上升而位於上死點。於是，基板20位於上部腔室區域TC。基板20被上部加熱器單元121、122包圍並對基板20的全面積執行急速熱處理。在急速熱處理過程中基板20直接接收從上部加熱器單元121、122之熱的傳達，並可接收維持第1溫度的上部腔室區域TC之熱的傳達。 Next, referring to Fig. 8, the elevating unit 130 is raised to be at the top dead center. Thus, the substrate 20 is located in the upper chamber region TC. The substrate 20 is surrounded by the upper heater units 121, 122 and performs rapid heat treatment on the entire area of the substrate 20. The substrate 20 directly receives the heat transfer from the upper heater units 121, 122 during the rapid heat treatment, and can receive the heat transfer of the upper chamber region TC maintaining the first temperature.
接著，參照圖9，數秒至數分鐘的急速熱處理結束後，使升降單元130下降並位於下死點。於是，基板20位於下部腔室區域BC。之後，擺動門115而開放出入口111，藉由使用基板移送臂卸載基板20來結束熱處理步驟。 Next, referring to Fig. 9, after the rapid heat treatment of several seconds to several minutes is completed, the elevating unit 130 is lowered and positioned at the bottom dead center. Thus, the substrate 20 is located in the lower chamber region BC. Thereafter, the door 115 is swung to open the inlet and outlet 111, and the heat treatment step is terminated by unloading the substrate 20 using the substrate transfer arm.
如上所述，本發明不僅將加熱器單元配置於本體內部而提高腔室內部的溫度均一性，也具有對基板直接傳 達熱而可更迅速地執行急速熱處理步驟之效果。 As described above, the present invention not only disposes the heater unit inside the body, but also improves the temperature uniformity inside the chamber, and also has direct transmission to the substrate. The effect of the rapid heat treatment step can be performed more quickly with heat.
又，本發明藉由採用金屬材質之本體，可容易地製作出可收容大面積基板之熱處理裝置。且具有可在金屬材質的本體反射熱而保全腔室內部的熱損失之效果。 Further, in the present invention, a heat treatment device capable of accommodating a large-area substrate can be easily produced by using a metal body. Moreover, it has the effect of reflecting heat in the metal body and preserving the heat loss inside the chamber.
本發明雖然如前述列舉較佳之實施型態進行圖示及說明，但不限於上述實施型態，可在不脫離本發明之精神的範圍內透過該發明所屬技術領域中具有通常知識者進行多樣的變形及變更。如此之變形例及變更例必須視為屬於本發明與附加之申請專利範圍的範圍內。 The present invention has been illustrated and described with reference to the preferred embodiments of the present invention, but is not limited to the embodiments described above, and may be varied by those of ordinary skill in the art to which the invention pertains without departing from the spirit of the invention. Deformation and change. Such modifications and variations are considered to be within the scope of the invention and the appended claims.
100‧‧‧熱處理裝置 100‧‧‧ Heat treatment unit
110‧‧‧本體 110‧‧‧ body
115‧‧‧門 115‧‧‧
120‧‧‧加熱器單元 120‧‧‧heater unit
121‧‧‧第1上部加熱器單元 121‧‧‧1st upper heater unit
122、122a、122b、122c‧‧‧第2上部加 熱器單元 122, 122a, 122b, 122c‧‧‧ 2nd upper plus Heater unit
123‧‧‧下部加熱器單元 123‧‧‧ Lower heater unit
125‧‧‧單位加熱器 125‧‧‧Unit heater
150‧‧‧氣體供給管 150‧‧‧ gas supply pipe
160‧‧‧輔助氣體供給孔 160‧‧‧Auxiliary gas supply hole
TC‧‧‧上部腔室區域 TC‧‧‧ upper chamber area
BC‧‧‧下部腔室區域 BC‧‧‧lower chamber area
Claims (21)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140034303A KR20150110206A (en) | 2014-03-24 | 2014-03-24 | Apparatus for heat processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201543600A true TW201543600A (en) | 2015-11-16 |
Family
ID=54167298
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| Application Number | Title | Priority Date | Filing Date |
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| TW104108295A TW201543600A (en) | 2014-03-24 | 2015-03-16 | Apparatus for heat processing |
Country Status (3)
| Country | Link |
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| KR (1) | KR20150110206A (en) |
| CN (1) | CN104952727A (en) |
| TW (1) | TW201543600A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI658530B (en) * | 2016-09-27 | 2019-05-01 | 大陸商北京北方華創微電子裝備有限公司 | Degassing chamber and semiconductor processing device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019029102A (en) * | 2017-07-26 | 2019-02-21 | 株式会社Ｓｃｒｅｅｎホールディングス | Heating apparatus |
| JP2019027623A (en) * | 2017-07-26 | 2019-02-21 | 株式会社Ｓｃｒｅｅｎホールディングス | Heating device and heating method |
| KR102258508B1 (en) * | 2019-11-05 | 2021-05-31 | (주)에스티아이 | Substrate Transferring Device and Method for Treating Substrate using the Substrate Transferring Device |
-
2014
- 2014-03-24 KR KR1020140034303A patent/KR20150110206A/en not_active Ceased
-
2015
- 2015-03-16 TW TW104108295A patent/TW201543600A/en unknown
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658530B (en) * | 2016-09-27 | 2019-05-01 | 大陸商北京北方華創微電子裝備有限公司 | Degassing chamber and semiconductor processing device |
| US11328940B2 (en) | 2016-09-27 | 2022-05-10 | Beijing Naura Microelectronics Equipment Co., Ltd. | Degassing chamber and semiconductor processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104952727A (en) | 2015-09-30 |
| KR20150110206A (en) | 2015-10-02 |
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