TW201500313A - Solar cell and solar cell forming paste composition for solar cell - Google Patents
Solar cell and solar cell forming paste composition for solar cell Download PDFInfo
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- TW201500313A TW201500313A TW103115701A TW103115701A TW201500313A TW 201500313 A TW201500313 A TW 201500313A TW 103115701 A TW103115701 A TW 103115701A TW 103115701 A TW103115701 A TW 103115701A TW 201500313 A TW201500313 A TW 201500313A
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- 239000000203 mixture Substances 0.000 title claims abstract description 73
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 107
- 239000011521 glass Substances 0.000 claims abstract description 94
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims description 38
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 16
- 239000011230 binding agent Substances 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 5
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 27
- 238000012360 testing method Methods 0.000 description 26
- 239000002245 particle Substances 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000010304 firing Methods 0.000 description 13
- 239000011787 zinc oxide Substances 0.000 description 13
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 12
- 229910052707 ruthenium Inorganic materials 0.000 description 12
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 11
- 239000011701 zinc Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000000470 constituent Substances 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 239000000395 magnesium oxide Substances 0.000 description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 7
- 230000002776 aggregation Effects 0.000 description 6
- 239000000292 calcium oxide Substances 0.000 description 6
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010406 interfacial reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000007561 laser diffraction method Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- -1 B 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- FZFYOUJTOSBFPQ-UHFFFAOYSA-M dipotassium;hydroxide Chemical compound [OH-].[K+].[K+] FZFYOUJTOSBFPQ-UHFFFAOYSA-M 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000006066 glass batch Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
本發明提供一種用以形成可實現優異電特性之鋁電極之糊組成物,藉由本發明所提供之糊組成物含有鋁粉末、玻璃料及有機媒液,又,前述玻璃料具備以下條件:(1)以換算成氧化物之莫耳比計,實質上由以下構成,即:SiO2:5~40mol%;B2O3:5~40mol%;ZnO:10~50mol%;Bi2O3:5~45mol%;及鹼土類金屬氧化物:0~25mol%;(2)令玻璃料全體為100mol%時,ZnO之莫耳含有率MZn相對於Bi2O3之莫耳含有率MBi之比(MZn/MBi)為0.8以上且2.5以下。 The present invention provides a paste composition for forming an aluminum electrode capable of achieving excellent electrical characteristics. The paste composition provided by the present invention contains an aluminum powder, a glass frit and an organic vehicle, and the glass frit has the following conditions: (1) In terms of the molar ratio converted to an oxide, substantially consists of: SiO2: 5 to 40 mol%; B2O3: 5 to 40 mol%; ZnO: 10 to 50 mol%; Bi2O3: 5 to 45 mol%; and alkaline earth Metal-like oxide: 0 to 25 mol%; (2) When the total amount of the glass frit is 100 mol%, the ratio of the molar content of MZn of ZnO to the molar content of Bi2O3 (MZn/MBi) is 0.8 or more and 2.5. the following.
Description
本發明是有關於一種太陽電池(cell,電池單元)及用於其之糊組成物。詳而言之,是有關於一種用以於太陽電池之受光面之背面側形成鋁電極的糊組成物。 The present invention relates to a solar cell (cell) and a paste composition therefor. More specifically, it relates to a paste composition for forming an aluminum electrode on the back side of a light receiving surface of a solar cell.
另,本發明主張根據2013年5月2日所申請的日本專利申請2013-096933號之優先權,且該申請之全體內容納入本說明書中以為參照。 The present invention claims the priority of Japanese Patent Application No. 2013-096933, filed on May 2, 2013, the entire content of which is hereby incorporated by reference.
作為將太陽之光能轉換成電力之太陽電池之典型例,已知的是將結晶性矽(單結晶或多結晶)利用作為基板之太陽電池,所謂結晶矽系太陽電池。作為前述結晶矽系太陽電池,舉例言之,已知的是如圖1所示之單面受光型太陽電池10。 A typical example of a solar cell that converts solar light energy into electric power is a solar cell in which a crystalline germanium (single crystal or polycrystal) is used as a substrate, and a so-called crystalline germanium solar cell. As the above-described crystalline lanthanide solar cell, for example, a single-sided light-receiving solar cell 10 as shown in Fig. 1 is known.
該太陽電池10於p型矽基板(Si晶圓)11之一表面(受光面側)具備n-Si層16,且於該n-Si層之表面具備防止反射膜14及受光面電極(表面電極)12。又,於矽基板11之另一表面(背面側)具備p+層24,且於該p+層之表面具備鋁電極20及外部 連接用電極22。 The solar cell 10 includes an n-Si layer 16 on one surface (light-receiving surface side) of the p-type germanium substrate (Si wafer) 11, and an anti-reflection film 14 and a light-receiving surface electrode (surface) on the surface of the n-Si layer. Electrode) 12. Further, a p + layer 24 is provided on the other surface (back surface side) of the substrate 11 , and an aluminum electrode 20 and an external connection electrode 22 are provided on the surface of the p + layer.
典型而言,鋁電極20之形成是藉由於矽基板11上賦予(塗佈)含有鋁粉末之糊狀(包含表現為墨水狀、漿液狀之情形。以下相同。)組成物並燒成而進行。於該燒成時,在p型矽基板11與鋁電極20之界面形成Al-Si合金層(未圖示),且藉由使鋁擴散至p型矽基板11(p-Si層18)中,形成p+層24。藉由該p+層24,即,BSF(背面電場,Back Surface Field)層,可防止光生成載體之再結合,且可提升電特性(例如光轉換效率)(所謂BSF效果)。 Typically, the aluminum electrode 20 is formed by applying (coating) a paste containing aluminum powder (including an ink-like or slurry-like form, the same applies hereinafter) to the ruthenium substrate 11 and firing it. . At the time of the firing, an Al-Si alloy layer (not shown) is formed on the interface between the p-type germanium substrate 11 and the aluminum electrode 20, and the aluminum is diffused into the p-type germanium substrate 11 (p-Si layer 18). Forming a p + layer 24. By the p + layer 24, that is, the BSF (Back Surface Field) layer, recombination of the light generating carrier can be prevented, and electrical characteristics (for example, light conversion efficiency) (so-called BSF effect) can be improved.
作為與此相關之習知技術,於專利文獻1~4中揭示有各種鋁電極形成用糊組成物。舉例言之,於專利文獻1中揭示有使用Bi2O3主體之玻璃的糊組成物。 As a conventional technique related to this, various kinds of paste compositions for forming an aluminum electrode are disclosed in Patent Documents 1 to 4. For example, Patent Document 1 discloses a paste composition using a glass of a Bi 2 O 3 main body.
[專利文獻1]日本專利申請公開第2010-222238號公報 [Patent Document 1] Japanese Patent Application Publication No. 2010-222238
[專利文獻2]日本專利申請公開第2008-159917號公報 [Patent Document 2] Japanese Patent Application Publication No. 2008-159917
[專利文獻3]日本專利申請公開第2013-504199號公報 [Patent Document 3] Japanese Patent Application Publication No. 2013-504199
[專利文獻4]日本專利申請公開第2007-081059號公報 [Patent Document 4] Japanese Patent Application Publication No. 2007-081059
然而,依據本發明人等之檢討,在使用習知技術之糊組成物的情況下,會有燒成時(BSF層之形成時)難以進 行矽基板與鋁之反應,或是局部性過度產生該反應以致Al-Si合金層增厚,並產生氣泡或Al之凝集之情形。其結果,BSF層會變成不均質層,並有電特性或耐久性(例如耐水性)不足之情形。 However, according to the review by the inventors of the present invention, in the case of using the paste composition of the prior art, it is difficult to advance during firing (when the BSF layer is formed). The reaction of the substrate with aluminum is performed, or the reaction is excessively generated locally so that the Al-Si alloy layer is thickened and agglomeration of bubbles or Al occurs. As a result, the BSF layer becomes an inhomogeneous layer and has insufficient electrical properties or durability (for example, water resistance).
本發明是有鑑於該點而創出,其目的在於提供一種用以形成可長時間發揮優異電特性之鋁電極之糊組成物。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a paste composition for forming an aluminum electrode which can exhibit excellent electrical characteristics for a long period of time.
又,相關之其他目的在於提供一種具備使用前述糊組成物而形成之鋁電極之太陽電池。 Further, another related object is to provide a solar battery including an aluminum electrode formed using the paste composition.
藉由本發明所提供之糊組成物(即,調製成糊狀之組成物)是用以形成太陽電池之鋁電極。前述糊組成物含有鋁粉末、玻璃料及有機媒液。又,前述玻璃料具備以下條件(1)、(2)。 The paste composition provided by the present invention (i.e., a composition prepared into a paste) is an aluminum electrode for forming a solar cell. The paste composition contains aluminum powder, a glass frit, and an organic vehicle. Further, the glass frit has the following conditions (1) and (2).
(1)以換算成氧化物之莫耳比計,實質上由以下之組成構成,即:SiO2:5~40mol%;B2O3:5~40mol%;ZnO:10~50mol%;Bi2O3:5~45mol%;及MgO、CaO、SrO及BaO中之至少1種:0~25mol%。 (1) The molar ratio converted to an oxide is substantially composed of SiO 2 : 5 to 40 mol %; B 2 O 3 : 5 to 40 mol%; ZnO: 10 to 50 mol%; 2 O 3 : 5 to 45 mol%; and at least one of MgO, CaO, SrO and BaO: 0 to 25 mol%.
(2)令前述玻璃料全體為100mol%時,前述ZnO之莫耳含有率MZn相對於前述Bi2O3之莫耳含有率MBi之比(MZn/MBi)為0.8以上且2.5以下。 (2) so that all of the glass frit 100mol%, the molar content ratio of ZnO and 2.5 M Zn Bi with respect to the ratio of M (M Zn / M Bi) the Bi 2 O 3 mole ratio of 0.8 or more comprising the following.
藉由使用前述構造之糊組成物(鋁糊),可均一且適切地產生鋁與矽之界面反應。故,可大幅地抑制氣泡或Al之凝集等之發生,且可於矽基板之背面側形成均質之BSF層。故,可大幅地提升太陽電池之電特性(例如光轉換效 率、開放電壓或填充因數)。此外,由於前述鋁電極亦具有優異之接著強度及耐久性(例如耐水性),因此,即使是譬如在水分滲入電池單元內部時,亦可將電特性維持在良好之範圍內,且可長期穩定使用。如此一來,藉由使用前述構造之糊組成物,可實現能以高水準兼顧電特性與耐久性(例如耐水性)之鋁電極。 By using the paste composition (aluminum paste) of the foregoing configuration, the interfacial reaction between aluminum and ruthenium can be uniformly and appropriately produced. Therefore, generation of bubbles or Al aggregation can be greatly suppressed, and a homogeneous BSF layer can be formed on the back side of the tantalum substrate. Therefore, the electrical characteristics of the solar cell can be greatly improved (for example, light conversion efficiency) Rate, open voltage or fill factor). In addition, since the aluminum electrode also has excellent adhesion strength and durability (for example, water resistance), even when moisture penetrates into the interior of the battery unit, the electrical characteristics can be maintained in a good range and can be stabilized for a long period of time. use. In this way, by using the paste composition of the above configuration, an aluminum electrode capable of achieving both electrical characteristics and durability (for example, water resistance) at a high level can be realized.
另,有關構成糊組成物之玻璃料方面,所謂「實質上構成」是包含下述之用語,即:僅由前述主氧化物成分所構成者;及按照以換算成氧化物之莫耳比計為玻璃全體之7mol%以下(宜為5mol%以下,且4mol%以下尤佳)之含有率,含有該主氧化物成分以外之副成分者。 Further, regarding the glass frit constituting the paste composition, the term "substantially constituted" includes a term consisting of only the main oxide component; and a molar ratio converted into an oxide. The content of 7 mol% or less (preferably 5 mol% or less, and 4 mol% or less) of the entire glass is contained in the subcomponent other than the main oxide component.
於一較佳態樣中,前述玻璃料以換算成氧化物之莫耳比計,實質上由以下之組成構成,即:SiO2:10~35mol%;B2O3:10~30mol%;ZnO:20~40mol%;Bi2O3:10~40mol%;及MgO、CaO、SrO及BaO中之至少1種:0.1~20mol%。 In a preferred embodiment, the glass frit is substantially composed of the following composition in terms of a molar ratio converted to an oxide, namely: SiO 2 : 10 to 35 mol %; B 2 O 3 : 10 to 30 mol %; ZnO: 20 to 40 mol%; Bi 2 O 3 : 10 to 40 mol%; and at least one of MgO, CaO, SrO, and BaO: 0.1 to 20 mol%.
藉由採用此種組成之玻璃料,可更進一步地提升由該糊組成物所形成的鋁電極之特性(例如前述電特性、接著強度、耐久性),且可實現更高之可靠性。 By using the glass frit having such a composition, the characteristics (for example, the aforementioned electrical characteristics, the subsequent strength, and the durability) of the aluminum electrode formed of the paste composition can be further improved, and higher reliability can be achieved.
於一較佳態樣中,前述玻璃料未含有Pb及鹼成分。即,於前述玻璃料中,至少未意圖添加該成分(可容許例如以不可避免之雜質帶入之情形)。藉由使用無Pb之玻璃料,可進一步地減低氣泡或Al之凝集,且可形成更均質之鋁電極。又,藉由使用無鹼之玻璃料,可提升耐水性或耐 藥品性(例如耐鹼性)。除此之外,可將熱膨脹係數抑制得更低。此由與矽基板之熱膨脹係數之整合的觀點來看亦為理想。 In a preferred aspect, the glass frit does not contain Pb and an alkali component. That is, at least the component is not intended to be added to the above-mentioned glass frit (a case where, for example, an unavoidable impurity is allowed to be introduced). By using a Pb-free glass frit, the agglomeration of bubbles or Al can be further reduced, and a more homogeneous aluminum electrode can be formed. Moreover, water resistance or resistance can be improved by using an alkali-free glass frit. Pharmaceutical properties (eg alkali resistance). In addition to this, the coefficient of thermal expansion can be suppressed to be lower. This is also desirable from the standpoint of integration with the thermal expansion coefficient of the tantalum substrate.
於一較佳態樣中,前述玻璃料之軟化點(開始軟化點)為420℃以上且620℃以下。藉由使用於此種溫度領域具有軟化點之玻璃料,可促進鋁與矽之界面反應。故,可穩定形成均質之BSF層,且可形成電特性(例如光轉換效率、開放電壓或填充因數)優異之鋁電極。另,玻璃料之軟化點可藉由一般之示差熱-熱重量同時測定(TG-DTA;Thermogravimetry-Differential Thermal Analysis)來測定。 In a preferred embodiment, the softening point (starting softening point) of the glass frit is 420 ° C or higher and 620 ° C or lower. The interfacial reaction between aluminum and ruthenium can be promoted by using a glass frit having a softening point in such a temperature range. Therefore, a homogeneous BSF layer can be stably formed, and an aluminum electrode excellent in electrical characteristics such as light conversion efficiency, open voltage, or fill factor can be formed. In addition, the softening point of the glass frit can be determined by a general differential thermal-thermal weight measurement (TG-DTA; Thermogravimetry-Differential Thermal Analysis).
於一較佳態樣中,令糊組成物全體為100質量%時,前述玻璃料之含有率為0.01質量%~1質量%。於前述可充分地享受BSF效果之範圍內使玻璃料之含有量比以往減低,藉此可更進一步地抑制氣泡之發生或耐水性之降低。又,由於玻璃料顯示絕緣性,因此,藉由使其減少,亦可提升鋁電極之導電性。 In a preferred embodiment, when the entire paste composition is 100% by mass, the content of the glass frit is 0.01% by mass to 1% by mass. In the range in which the BSF effect can be sufficiently enjoyed as described above, the content of the glass frit is reduced as compared with the prior art, whereby the occurrence of bubbles or the decrease in water resistance can be further suppressed. Further, since the glass frit exhibits insulation, the electrical conductivity of the aluminum electrode can be improved by reducing it.
於一較佳態樣中,前述有機媒液含有分解溫度(分解終點溫度)為400℃以下之樹脂(例如丙烯酸樹脂)作為有機黏結劑。此種黏結劑由於脫脂特性良好(即,燒成時容易燒穿),因此,在燒穿時的吸熱之影響下,可防止矽與鋁局部之過度反應。故,藉由使用含有如前述玻璃料及所述黏結劑之糊組成物,可形成更均質之BSF層,且可適於實現更加優異(例如提升電特性、耐久性、接著強度中至少1種性能)之鋁電極。另,有機黏結劑之分解溫度可藉由一般之 示差熱-熱重量同時測定(TG-DTA)來測定。 In a preferred embodiment, the organic vehicle contains a resin (for example, an acrylic resin) having a decomposition temperature (decomposition end temperature) of 400 ° C or less as an organic binder. Since such a binder has good degreasing characteristics (that is, it is easily burned through during firing), it is possible to prevent excessive reaction of bismuth with aluminum under the influence of heat absorption during burn-through. Therefore, by using a paste composition containing the above glass frit and the binder, a more homogeneous BSF layer can be formed, and it can be adapted to achieve more excellent (for example, at least one of electric properties, durability, and strength). ) aluminum electrode. In addition, the decomposition temperature of the organic binder can be used in general. The differential thermal-thermal weight simultaneous measurement (TG-DTA) was used for the measurement.
如前述,藉由使用在此所揭示之任一糊組成物(鋁糊),可形成電特性及耐久性優異之鋁電極。故,經由本發明,可提供一種具備在此所揭示之鋁電極之太陽電池。前述太陽電池自當為例如光轉換效率或填充因數大且電特性、耐久性或可靠性優異者。 As described above, an aluminum electrode excellent in electrical characteristics and durability can be formed by using any of the paste compositions (aluminum paste) disclosed herein. Therefore, according to the present invention, a solar cell having the aluminum electrode disclosed herein can be provided. The solar cell described above is excellent in, for example, a light conversion efficiency or a fill factor and is excellent in electrical characteristics, durability, or reliability.
10‧‧‧太陽電池 10‧‧‧Solar battery
11‧‧‧p型矽基板(Si晶圓) 11‧‧‧p-type germanium substrate (Si wafer)
12‧‧‧受光面電極(表面電極) 12‧‧‧Photometric surface electrode (surface electrode)
14‧‧‧防止反射膜 14‧‧‧Anti-reflection film
16‧‧‧n-Si層(n+層) 16‧‧‧n-Si layer (n + layer)
18‧‧‧p-Si層 18‧‧‧p-Si layer
20‧‧‧鋁電極(背面電極) 20‧‧‧Aluminum electrode (back electrode)
22‧‧‧外部連接用電極 22‧‧‧External connection electrode
23‧‧‧開口部 23‧‧‧ openings
24‧‧‧p+層(BSF層) 24‧‧‧p + layer (BSF layer)
圖1是示意性顯示一實施形態下太陽電池之一結構例之截面圖。 Fig. 1 is a cross-sectional view schematically showing a configuration example of a solar cell in an embodiment.
以下,說明本發明之較佳實施形態。另,屬於本說明書中特別言及之事項以外之事物且為本發明之實施所必須之事物(例如糊之調製方法、本發明中未賦予特徵之太陽電池(電池單元)之一般製造程序)可作為根據該領域中的習知技術之該發明所屬技術領域中具有通常知識者之設計事項來掌握。本發明可根據本說明書中所揭示之內容與該領域中的技術常識來實施。 Hereinafter, preferred embodiments of the present invention will be described. In addition, what is necessary for the implementation of the present invention other than those specifically mentioned in the present specification (for example, a paste preparation method, a general manufacturing procedure of a solar cell (battery unit) not characterized in the present invention) can be used as It is grasped according to the design matters of those having ordinary knowledge in the technical field to which the invention pertains to the prior art in the art. The present invention can be implemented in accordance with the teachings of the present disclosure and the technical common knowledge in the field.
《糊組成物》 Paste composition
首先,詳細地說明藉由本發明所提供之鋁電極形成用糊組成物。在此所揭示之鋁電極形成用糊組成物是使用在形成太陽電池中的鋁電極之用途之鋁糊,且為至少含有鋁粉末、玻璃料及有機媒液並調製成糊狀之電極形成用材料。只要可實現本發明之目的,則有關其他構成成分方面 並無特殊之限制。 First, the paste composition for forming an aluminum electrode provided by the present invention will be described in detail. The paste composition for forming an aluminum electrode disclosed herein is an aluminum paste used for forming an aluminum electrode in a solar cell, and is an electrode forming material containing at least aluminum powder, a glass frit, and an organic vehicle solution and preparing a paste. . As far as the object of the invention can be achieved, There are no special restrictions.
《鋁粉末》 Aluminum Powder
於本說明書中,所謂「鋁粉末」是指將鋁(Al)作為主體之粒子之聚集體,典型上是由Al單體所構成的粒子之聚集體,然而,即使是含有微量之Al以外之雜質或Al主體之合金,只要全體是鋁主體之粒子之聚集體,則可包含於在此所說之「鋁粉末」。另,鋁粉末本身可藉由以往公知之製造方法來製造,並未要求特別之製造手段。構成使用之鋁粉末之粒子典型上為球狀,然而,並不限於所謂正球狀,亦可含有例如片形狀或不規則形狀之粒子。 In the present specification, the term "aluminum powder" means an aggregate of particles containing aluminum (Al) as a main component, and is typically an aggregate of particles composed of an Al monomer. However, even a trace amount of Al is contained. The alloy of the impurity or the Al main body may be included in the "aluminum powder" as used herein as long as it is an aggregate of particles of the aluminum main body. Further, the aluminum powder itself can be produced by a conventionally known production method, and no special manufacturing means is required. The particles constituting the aluminum powder to be used are typically spherical, but are not limited to a so-called spherical shape, and may contain particles such as a sheet shape or an irregular shape.
使用之鋁粉末之性狀並無特殊之限制,然而,若由形成微細電極圖案之觀點來看,則平均粒徑D50通常以10μm以下為佳,典型而言,可適意使用平均粒徑為2μm~8μm(例如4μm~6μm)之鋁粉末。另,於本說明書中,所謂「粒徑」是指藉由根據雷射繞射法之粒度分布測定裝置所測定之值,所謂D50是指粒度分布中累積體積50%時之粒徑(所謂中位粒徑)。又,鋁粉末之粒度分布宜較為狹窄(粒徑一致)。前述指標可採用根據雷射繞射法之粒度分布中累積體積10%時之粒徑(D10)與累積體積90%時之粒徑(D90)之比(D10/D90)。當構成粉末之粒徑大致相等時,會構成D10/D90=1,反之,粒度分布越廣,D10/D90會越接近0。在此,可適切地使用D10/D90大約0.2之粒徑較為一致之鋁粉末。 The properties of the aluminum powder to be used are not particularly limited. However, from the viewpoint of forming a fine electrode pattern, the average particle diameter D 50 is usually preferably 10 μm or less, and typically, an average particle diameter of 2 μm can be suitably used. ~8 μm (for example, 4 μm to 6 μm) of aluminum powder. In addition, in the present specification, the "particle diameter" means a value measured by a particle size distribution measuring apparatus according to a laser diffraction method, and the so-called D 50 means a particle diameter at a cumulative volume of 50% in a particle size distribution (so-called Median particle size). Further, the particle size distribution of the aluminum powder is preferably narrow (the particle diameter is uniform). The foregoing index may use a ratio (D 10 /D 90 ) of the particle diameter (D 10 ) at a cumulative volume of 10% in the particle size distribution according to the laser diffraction method to the particle diameter (D 90 ) at a cumulative volume of 90%. When the particle diameters of the constituent powders are substantially equal, D 10 /D 90 =1 is formed, and conversely, the wider the particle size distribution, the closer D 10 /D 90 is to zero. Here, an aluminum powder having a relatively uniform particle diameter of about 0.2 of D 10 /D 90 can be suitably used.
鋁粉末於糊組成物全體中所佔比例並無特殊之限制,通常大約55質量%~85質量%,舉例言之,可設為60 質量%~80質量%。藉由設為前述範圍,可賦予鋁電極充分之導電性。又,可適切地產生與矽之反應,且可適切地形成BSF層。故,可實現高電特性(特別是光轉換效率)。 The proportion of the aluminum powder in the entire paste composition is not particularly limited, and is usually about 55 to 85% by mass, and for example, it can be set to 60. Mass%~80% by mass. By setting it as the said range, the aluminum electrode can be provided with sufficient electroconductivity. Further, the reaction with ruthenium can be appropriately produced, and the BSF layer can be formed appropriately. Therefore, high electrical characteristics (especially light conversion efficiency) can be achieved.
《玻璃料》 "Glass"
玻璃料(玻璃粉末)是提升鋁電極之接著強度(剝離強度)之無機添加材。包含於在此所揭示之糊組成物(鋁糊)之玻璃料(玻璃組成物)含有SiO2、B2O3、ZnO及Bi2O3作為必須構成成分。換言之,是將Si、B、Zn與Bi之氧化物作為基本構成要素(即,將SiO2-B2O3-ZnO-Bi2O3系作為基本)之玻璃料。前述玻璃料以換算成氧化物之莫耳比計,實質上由以下之組成構成,即:SiO2:5~40mol%;B2O3:5~40mol%;ZnO:10~50mol%;Bi2O3:5~45mol%;及MgO、CaO、SrO及BaO中之至少1種:0~25mol%。 The glass frit (glass powder) is an inorganic additive that enhances the bonding strength (peel strength) of the aluminum electrode. The glass frit (glass composition) contained in the paste composition (aluminum paste) disclosed herein contains SiO 2 , B 2 O 3 , ZnO, and Bi 2 O 3 as essential constituent components. In other words, it is a glass frit in which an oxide of Si, B, Zn, and Bi is used as a basic constituent element (that is, a SiO 2 -B 2 O 3 -ZnO-Bi 2 O 3 system is essential). The glass frit is substantially composed of a composition of SiO 2 : 5 to 40 mol %; B 2 O 3 : 5 to 40 mol %; ZnO: 10 to 50 mol %; 2 O 3 : 5 to 45 mol%; and at least one of MgO, CaO, SrO and BaO: 0 to 25 mol%.
再者,較佳組成之玻璃料係以換算成氧化物之莫耳比計,實質上由以下之組成構成,即:SiO2:10~35mol%;B2O3:10~30mol%;ZnO:20~40mol%;Bi2O3:10~40mol%;及MgO、CaO、SrO及BaO中之至少1種:0.1~20mol%。 Further, the glass frit having a preferred composition is substantially composed of the following composition in terms of a molar ratio converted into an oxide, that is, SiO 2 : 10 to 35 mol %; B 2 O 3 : 10 to 30 mol %; ZnO : 20 to 40 mol%; Bi 2 O 3 : 10 to 40 mol%; and at least one of MgO, CaO, SrO, and BaO: 0.1 to 20 mol%.
其中,玻璃料以換算成氧化物之莫耳比計,實質上由以下之組成構成尤佳,即:SiO2:10~35mol%;B2O3:10~30mol%;ZnO:20~30mol%;Bi2O3:10~20mol%;BaO:10~20mol%;及MgO、CaO及SrO中之至少1種:0.1~2mol%。 Among them, the glass frit is preferably composed of the following composition in terms of a molar ratio converted into an oxide, that is, SiO 2 : 10 to 35 mol %; B 2 O 3 : 10 to 30 mol %; ZnO: 20 to 30 mol. %; Bi 2 O 3 : 10 to 20 mol%; BaO: 10 to 20 mol%; and at least one of MgO, CaO and SrO: 0.1 to 2 mol%.
以下,依序說明各構成成分。 Hereinafter, each constituent component will be described in order.
氧化矽(SiO2)是構成玻璃骨架之成分。SiO2於玻璃全體中所佔比例以換算成氧化物之莫耳比計,設為大約 5mol%以上較適當,且宜設為10mol%以上。藉此,可提升耐水性、耐藥品性、耐熱衝擊性中之至少1種。又,上限值設為大約40mol%以下較適當,且宜設為35mol%以下。藉此,可防止玻璃料之軟化點變得過高,且可藉由較低之燒成溫度形成鋁電極。 Cerium oxide (SiO 2 ) is a component constituting the glass skeleton. The proportion of the SiO 2 in the entire glass is preferably about 5 mol% or more, and is preferably 10 mol% or more in terms of the molar ratio of the oxide. Thereby, at least one of water resistance, chemical resistance, and thermal shock resistance can be improved. Further, the upper limit is preferably about 40 mol% or less, and is preferably 35 mol% or less. Thereby, the softening point of the frit can be prevented from becoming too high, and the aluminum electrode can be formed by a lower firing temperature.
氧化硼(B2O3)是以下效果高的成分,即:提升玻璃料之熱安定性(調整熱膨脹係數),同時降低玻璃料之軟化點。為了適切地發揮此種效果,B2O3於玻璃全體中所佔比例以換算成氧化物之莫耳比計,設為大約5mol%以上較適當,且宜設為10mol%以上。藉此,可更均一地產生鋁與矽之反應,且可形成均質之BSF層。又,上限值設為大約40mol%以下較適當,且宜設為30mol%以下。藉此,可提高玻璃料之熱安定性,且可提升鋁電極之耐久性(例如機械強度或耐水性)。 Boron oxide (B 2 O 3 ) is a component having high effects of improving the thermal stability of the glass frit (adjusting the coefficient of thermal expansion) while lowering the softening point of the glass frit. In order to exhibit such an effect, the proportion of B 2 O 3 in the entire glass is preferably about 5 mol% or more, and is preferably 10 mol% or more, based on the molar ratio of the oxide. Thereby, the reaction of aluminum and ruthenium can be more uniformly produced, and a homogeneous BSF layer can be formed. Further, the upper limit is preferably about 40 mol% or less, and is preferably 30 mol% or less. Thereby, the thermal stability of the glass frit can be improved, and the durability (for example, mechanical strength or water resistance) of the aluminum electrode can be improved.
氧化鋅(ZnO)是熱膨脹係數比其他成分更接近矽且提升玻璃料之熱安定性(調整熱膨脹係數)之效果高的成分。又,屬於熱衝擊性高且難以浸水等可實現化學上安定之性質及耐久性之成分。為了適切地發揮此種效果,ZnO於玻璃全體中所佔比例以換算成氧化物之莫耳比計,設為大約10mol%以上較適當,且宜設為20mol%以上。又,上限值設為大約50mol%以下較適當,且宜設為40mol%以下。 Zinc oxide (ZnO) is a component which has a higher coefficient of thermal expansion than other components and which has a high effect of improving the thermal stability (adjustment of thermal expansion coefficient) of the glass frit. Further, it is a component which has high thermal shock resistance and is difficult to be immersed in water and can achieve chemically stable properties and durability. In order to exhibit such an effect, the proportion of ZnO in the entire glass is preferably about 10 mol% or more, and is preferably 20 mol% or more, based on the molar ratio of the oxide. Further, the upper limit is preferably about 50 mol% or less, and is preferably 40 mol% or less.
氧化鉍(Bi2O3)是以下效果高的成分,即:提升玻璃料之熱安定性(調整熱膨脹係數),同時降低玻璃料之軟化點。為了適切地發揮此種效果,Bi2O3於玻璃全體中所佔比 例以換算成氧化物之莫耳比計,設為大約5mol%以上較適當,且宜設為10mol%以上。又,上限值設為大約45mol%以下較適當,且宜設為40mol%以下。 Bismuth oxide (Bi 2 O 3 ) is a component having high effects of improving the thermal stability of the glass frit (adjusting the coefficient of thermal expansion) while lowering the softening point of the glass frit. In order to exhibit such an effect, the proportion of the total amount of Bi 2 O 3 in the entire glass is preferably about 5 mol% or more, and is preferably 10 mol% or more. Further, the upper limit is preferably about 45 mol% or less, and is preferably 40 mol% or less.
又,於包含於在此所揭示之糊組成物之玻璃料中,ZnO之莫耳含有率MZn相對於Bi2O3之莫耳含有率MBi之比(MZn/MBi)為0.8以上且2.5以下(惟,MBi與MZn未脫離前述比率之範圍。)。藉由於糊組成物中含有此種玻璃料,可形成均質之BSF層,且可實現能以高水準兼顧電特性與耐久性(例如耐水性)之鋁電極。 Further, in the glass batch to be included within the compositions disclosed herein of the paste, the molar content ratio of ZnO with respect to M Zn Bi 2 O 3 ratio of M Bi (M Zn / M Bi) containing a molar ratio of 0.8 Above and 2.5 or less (except that M Bi and M Zn are not deviated from the range of the aforementioned ratio). By including such a glass frit in the paste composition, a homogeneous BSF layer can be formed, and an aluminum electrode capable of achieving both electrical properties and durability (for example, water resistance) at a high level can be realized.
另,除了前述4種必須構成成分外,可使玻璃料中含有任意成分。於適切之一態樣中,玻璃料之構成成分更含有至少一種之鹼土類金屬氧化物,例如氧化鎂(MgO)、氧化鈣(CaO)、氧化鍶(SrO)、氧化鋇(BaO)。藉此,可調整熱膨脹係數,同時可藉由玻璃組成之多樣化(構成金屬元素之多種類化),提高玻璃之安定性。若由此種觀點來看,則鹼土類金屬氧化物於玻璃全體中所佔比例以換算成氧化物之莫耳比計,宜設為大約0.01mol%以上,且設為0.1mol%以上較佳。又,上限值宜設為大約25mol%以下,且設為20mol%以下較佳。此外,MgO亦為可進行玻璃料熔融時之黏度調整之成分,CaO亦為可提高玻璃料之硬度而提升耐磨損性之成分。故,其中,宜含有鎂成分及/或鈣成分,特別是宜含有兩者。 Further, in addition to the above-mentioned four essential constituent components, the glass frit may contain an optional component. In one aspect, the constituents of the glass frit further contain at least one alkaline earth metal oxide such as magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), and barium oxide (BaO). Thereby, the coefficient of thermal expansion can be adjusted, and the stability of the glass can be improved by the diversification of the glass composition (constituting a plurality of types of metal elements). In view of the above, the proportion of the alkaline earth metal oxide in the entire glass is preferably about 0.01 mol% or more, and preferably 0.1 mol% or more, based on the molar ratio of the oxide. . Further, the upper limit is preferably about 25 mol% or less, and preferably 20 mol% or less. Further, MgO is also a component which can adjust the viscosity of the glass frit when it is melted, and CaO is also a component which can improve the hardness of the glass frit and improve the abrasion resistance. Therefore, it is preferable to contain a magnesium component and/or a calcium component, and it is preferable to contain both.
於適切之其他一態樣中,玻璃料之構成成分更含有Al2O3。氧化鋁(Al2O3)是控制玻璃料熔融時之流動性而 干預鋁電極形成時之附著安定性之成分。Al2O3於玻璃料全體中所佔比例以換算成氧化物之莫耳比計,可設為大約10mol%以下,設為例如0.01mol%~5mol%左右較佳。若Al2O3含有率相較於前述範圍而太高,則會有玻璃之耐藥品性降低之虞。 In another aspect that is suitable, the constituents of the glass frit further contain Al 2 O 3 . Alumina (Al 2 O 3 ) is a component that controls the fluidity at the time of melting of the glass frit and interferes with the adhesion stability at the time of formation of the aluminum electrode. The proportion of Al 2 O 3 in the entire glass frit may be about 10 mol% or less, and is preferably, for example, about 0.01 mol% to 5 mol%, based on the molar ratio of the oxide. If the Al 2 O 3 content is too high compared to the above range, the chemical resistance of the glass may be lowered.
除此之外,只要不會明顯損害本發明之效果,則亦可按照各種目的,含有TiO2、ZrO2、V2O5、Nb2O5、FeO、Fe2O3、Fe3O4、CuO、Cu2O、SnO、SnO2、P2O5、La2O3、CeO2等之氧化物成分。該等構成成分之比例宜設為玻璃組成物全體之3mol%以下(典型上為2mol%以下,例如1mol%以下)。 In addition, TiO 2 , ZrO 2 , V 2 O 5 , Nb 2 O 5 , FeO, Fe 2 O 3 , Fe 3 O 4 may be contained for various purposes as long as the effects of the present invention are not significantly impaired. An oxide component such as CuO, Cu 2 O, SnO, SnO 2 , P 2 O 5 , La 2 O 3 or CeO 2 . The ratio of the constituent components is preferably 3 mol% or less (typically 2 mol% or less, for example, 1 mol% or less) of the entire glass composition.
於適切之一態樣中,在此所揭示之糊組成物未含有作為鹼成分之鹼金屬氧化物(例如氧化鋰(Li2O)、氧化鈉(Na2O)、氧化鉀(K2O))。具體而言,可將鹼金屬氧化物於玻璃料全體中所佔比例設為大約1mol%以下,且宜設為小於1mol%,設為0.5mol%以下較佳,設為0.1mol%以下尤佳。藉此,可提升耐水性或耐藥品性。又,可防止熱膨脹係數變得過高。 In one aspect, the paste composition disclosed herein does not contain an alkali metal oxide as an alkali component (for example, lithium oxide (Li 2 O), sodium oxide (Na 2 O), potassium oxide (K 2 O). )). Specifically, the proportion of the alkali metal oxide in the entire glass frit may be about 1 mol% or less, and is preferably less than 1 mol%, preferably 0.5 mol% or less, more preferably 0.1 mol% or less. . Thereby, water resistance or chemical resistance can be improved. Further, it is possible to prevent the coefficient of thermal expansion from becoming too high.
又,若由鉛限制之觀點等來看,則在此所揭示之糊組成物不宜含有PbO作為玻璃料之構成成分。具體而言,宜將PbO於玻璃料全體中所佔比例設為大約0.1mol%以下,設為0.01mol%以下尤佳。藉此,可進一步地減低氣泡或Al之凝集,且可形成均質之BSF層。若由對環境之考慮或作業性之觀點來看,則亦宜作成無Pb。 Moreover, it is not preferable to contain PbO as a constituent component of a glass frit in view of the viewpoint of lead limitation, etc.. Specifically, the proportion of PbO in the entire glass frit is preferably about 0.1 mol% or less, and more preferably 0.01 mol% or less. Thereby, the aggregation of bubbles or Al can be further reduced, and a homogeneous BSF layer can be formed. From the point of view of environmental considerations or workability, it is also advisable to make no Pb.
使用之玻璃料之性狀並無特殊之限制,然而,為了使鋁電極穩定固著(燒固)於矽基板上,平均粒徑D50通常以20μm以下為佳,典型而言,可適意使用平均粒徑為0.01μm~10μm(例如0.1μm~5μm)之玻璃料。 The properties of the glass frit to be used are not particularly limited. However, in order to stably fix (burn) the aluminum electrode on the ruthenium substrate, the average particle diameter D 50 is usually preferably 20 μm or less. Typically, the average value can be suitably used. A glass frit having a particle diameter of 0.01 μm to 10 μm (for example, 0.1 μm to 5 μm).
於一理想態樣中,前述玻璃料之軟化點為420℃以上(典型上為430℃以上),且為620℃以下(典型上為600℃以下)。藉由於此種溫度領域具有軟化點之玻璃料之使用,可促進鋁與矽之界面反應。 In an ideal aspect, the glass frit has a softening point of 420 ° C or higher (typically 430 ° C or higher) and 620 ° C or lower (typically 600 ° C or lower). The interfacial reaction between aluminum and ruthenium can be promoted by the use of a glass frit having a softening point in such a temperature range.
玻璃料於糊組成物全體中所佔比例並無特殊之限制,通常大約5質量%以下,典型上可設為0.01質量%~5質量%,例如0.01質量%~3質量%。特別是於適切之一態樣中,玻璃料於糊組成物全體中所佔比例為0.01質量%~1質量%。藉由設為前述範圍,可適切地形成BSF層。又,依此,藉由減少玻璃料之含有量,可減低矽基板之翹曲量。再者,可提升導電性,且可進一步地提升鋁電極之電特性。 The proportion of the glass frit in the entire paste composition is not particularly limited, and is usually about 5% by mass or less, and typically 0.01% by mass to 5% by mass, for example, 0.01% by mass to 3% by mass. In particular, in a suitable aspect, the proportion of the glass frit in the entire paste composition is 0.01% by mass to 1% by mass. By setting it as the said range, the BSF layer can be formed suitably. Further, by reducing the content of the glass frit, the amount of warpage of the substrate can be reduced. Furthermore, the conductivity can be improved and the electrical characteristics of the aluminum electrode can be further improved.
<有機媒液> <Organic media>
有機媒液是用以分散如前述固形物(即,鋁粉末或玻璃料)之液狀介質,典型而言,含有有機溶劑及有機黏結劑。 The organic vehicle is a liquid medium for dispersing the solid matter (i.e., aluminum powder or glass frit) as described above, and typically contains an organic solvent and an organic binder.
有機溶劑只要是可良好地分散鋁粉末或玻璃料即可,無特殊之限制而可使用以往使用在此種糊組成物之有機溶劑。具體而言,可使用乙二醇及二乙二醇衍生物(二醇醚系溶劑)、丁卡必醇、二乙二醇單丁醚乙酸酯、萜品醇等之高沸點有機溶劑1種或組合複數種。 The organic solvent is not particularly limited as long as it can disperse aluminum powder or glass frit, and an organic solvent conventionally used in such a paste composition can be used. Specifically, a high-boiling organic solvent such as ethylene glycol and a diethylene glycol derivative (glycol ether solvent), tetracarbitol, diethylene glycol monobutyl ether acetate, terpineol or the like can be used. Kind or combination of multiple species.
有機黏結劑只要是可賦予在此所揭示之糊組成 物良好之黏性及塗膜形成能力(對矽基板之附著性)即可,無特殊之限制而可使用以往使用在此種糊組成物之有機黏結劑。舉例言之,可列舉如:將丙烯酸樹脂、環氧樹脂、苯酚樹脂、醇酸樹脂、纖維素系高分子、聚乙烯醇、松香樹脂等作為主體者。於適切之一態樣中,含有分解溫度為400℃以下之樹脂。藉由使用此種黏結劑,可防止氣泡或Al之凝集,且可形成更均質之BSF層。若由此種觀點來看,則特別是可適切地使用丙烯酸樹脂。 The organic binder can impart the composition of the paste disclosed herein as long as it is The good viscosity and the film forming ability (adhesion to the substrate) may be used, and an organic binder conventionally used in such a paste composition may be used without particular limitation. For example, an acrylic resin, an epoxy resin, a phenol resin, an alkyd resin, a cellulose polymer, a polyvinyl alcohol, a rosin resin, or the like can be exemplified. In one aspect, a resin having a decomposition temperature of 400 ° C or less is contained. By using such a binder, aggregation of bubbles or Al can be prevented, and a more homogeneous BSF layer can be formed. From this point of view, in particular, an acrylic resin can be suitably used.
作為有機媒液之有機溶劑與有機黏結劑之比例可考慮作為目的之糊組成物之黏性或塗佈性等任意地設定。大致之標準例如可設定成令糊組成物中的固形物材料(鋁粉末及玻璃料)之總量為100質量%時,以1質量%以上且5質量%以下(更宜為2質量%以上且4質量%以下)之比例含有有機黏結劑。 The ratio of the organic solvent to the organic binder as the organic vehicle can be arbitrarily set in consideration of the viscosity, coatability, and the like of the intended paste composition. When the total amount of the solid material (aluminum powder and the glass frit) in the paste composition is 100% by mass, the content is generally 1% by mass or more and 5% by mass or less (more preferably 2% by mass or more). And the ratio of 4 mass % or less) contains an organic binder.
又,雖無特殊之限制,然而,有機媒液於糊組成物全體中所佔比例通常大約10質量%~30質量%,且宜設為15質量%~25質量%。 Further, although it is not particularly limited, the proportion of the organic vehicle liquid in the entire paste composition is usually about 10% by mass to 30% by mass, and preferably 15% by mass to 25% by mass.
與習知太陽電池用鋁糊相同,此種糊組成物可藉由混合前述材料(典型上為鋁粉末、玻璃料(玻璃粉末)及適當之有機媒液)輕易地調製。舉例言之,糊組成物之調製可藉由使用一般之混練機,以預定摻合比將鋁粉末及玻璃料與有機媒液一同混合.攪拌而進行。 Like the conventional aluminum paste for solar cells, such a paste composition can be easily prepared by mixing the above materials (typically aluminum powder, glass frit (glass powder) and a suitable organic vehicle). For example, the paste composition can be prepared by mixing the aluminum powder and the glass frit with the organic vehicle at a predetermined blending ratio by using a general kneader. Stirring is carried out.
在此所揭示之糊組成物可與以往為了於矽基板上形成作為背面電極之鋁電極(進而是p+層,即,BSF層)而 使用的鋁糊相同地處理,且無特殊之限制而可使用以往公知之方法。具體而言,可如下述般供鋁電極之形成。 The paste composition disclosed herein can be treated in the same manner as the aluminum paste which has been conventionally used for forming an aluminum electrode (and further a p + layer, that is, a BSF layer) as a back surface electrode on a substrate, and is not particularly limited. A conventionally known method can be used. Specifically, the formation of an aluminum electrode can be provided as follows.
首先,藉由網版印刷法、分配器塗佈法、浸漬塗佈法等手法,將糊組成物賦予(塗佈)至矽基板上,並構成所期望之膜厚或塗膜圖案。鋁電極之塗膜厚度宜設為100μm以下,且設為80μm以下較佳,設為60μm以下更佳,設為例如30μm±10μm尤佳。藉由以此種膜厚形成鋁電極,可有效地顯現背面電極中的BSF效果。 First, the paste composition is applied (coated) to a ruthenium substrate by a method such as a screen printing method, a dispenser coating method, or a dip coating method to form a desired film thickness or a coating film pattern. The thickness of the coating film of the aluminum electrode is preferably 100 μm or less, preferably 80 μm or less, more preferably 60 μm or less, and particularly preferably 30 μm ± 10 μm. By forming the aluminum electrode with such a film thickness, the BSF effect in the back surface electrode can be effectively exhibited.
接著,使用任意之乾燥機構,並藉由適當之溫度(例如100℃~300℃)使糊塗佈物乾燥。乾燥後,藉由於適當之燒成爐(典型上為高速燒成爐)中以適當之加熱條件(例如600℃~900℃,且宜為700℃~800℃)加熱預定時間,進行乾燥塗膜之燒成。藉此,前述糊塗佈物會燒固於矽基板上,且可形成後述如圖1所示之鋁電極20及p+層(BSF層)24。即,藉由燒成,於p型矽基板11上形成鋁電極20(構成背面電極),同時藉由使鋁原子擴散至該基板中,形成雜質含有鋁之p+層24。 Next, using any drying mechanism, the paste coating is dried by a suitable temperature (for example, 100 ° C to 300 ° C). After drying, the film is dried by heating in a suitable firing furnace (typically a high-speed firing furnace) under appropriate heating conditions (for example, 600 ° C to 900 ° C, and preferably 700 ° C to 800 ° C) for a predetermined time. Burnt. Thereby, the paste coating material is baked on the ruthenium substrate, and the aluminum electrode 20 and the p + layer (BSF layer) 24 as shown in FIG. 1 can be formed later. That is, the aluminum electrode 20 (constituting the back surface electrode) is formed on the p-type germanium substrate 11 by firing, and at the same time, aluminum atoms are diffused into the substrate to form a p + layer 24 containing impurities of aluminum.
在此所揭示之糊組成物含有如前述般將SiO2-B2O3-ZnO-Bi2O3系作為基本的預定玻璃料。藉此,可形成均質之BSF層,且可實現優異之電特性。又,亦可提升鋁電極之接著強度或耐久性(例如耐水性)。故,不僅是作為結著材,可於提高鋁電極之耐久性之目的下含有的玻璃料之含有量可比以往減少。其結果,於使用該糊組成物而製得之太陽電池中,可有效地抑制、防止可能產生自矽基板 與玻璃成分之熱膨脹率差之基板之變形(翹曲等)。又,於使用前述糊組成物而構成之鋁電極中,可減低屬於絕緣性之玻璃成分之含有量,且可發揮良好之導通。 The paste composition disclosed herein contains the SiO 2 -B 2 O 3 -ZnO-Bi 2 O 3 system as a basic predetermined glass frit as described above. Thereby, a homogeneous BSF layer can be formed, and excellent electrical characteristics can be achieved. Moreover, the adhesion strength or durability (for example, water resistance) of the aluminum electrode can also be improved. Therefore, the content of the glass frit contained in the purpose of improving the durability of the aluminum electrode can be reduced as compared with the prior art. As a result, in the solar cell obtained by using the paste composition, deformation (warpage, etc.) of the substrate which may cause a difference in thermal expansion coefficient between the substrate and the glass component can be effectively suppressed and prevented. Further, in the aluminum electrode which is formed by using the paste composition, the content of the glass component which is insulating can be reduced, and good conduction can be exhibited.
另,除了使用在此所揭示之糊組成物而形成鋁電極外,太陽電池製造用之材料或程序可與習知相同。舉例言之,與習知相同,於矽基板上形成n+層或防止反射膜後,使用與習知相同之銀糊,於背面側之所期望領域網版印刷.乾燥,且於受光面側亦將銀糊印刷.乾燥成圖案狀。然後,將在此所揭示之糊組成物印刷.乾燥成與背面側之銀糊形成領域之一部分重疊,並進行燒成。如此一來,可製造具備使用該糊組成物而構成之背面電極之太陽電池(典型上為結晶系矽太陽電池)。 Further, in addition to the use of the paste composition disclosed herein to form an aluminum electrode, materials or procedures for the manufacture of solar cells may be the same as conventionally known. For example, as in the prior art, after the n + layer or the antireflection film is formed on the substrate, the same silver paste as in the prior art is used for screen printing on the back side. Dry, and the silver paste is also printed on the side of the light receiving surface. Dry to a pattern. Then, the paste composition disclosed herein is printed. It is dried to partially overlap with one of the fields of silver paste formation on the back side, and is fired. In this way, a solar cell (typically a crystalline system solar cell) having a back electrode formed using the paste composition can be produced.
《太陽電池》 Solar Cell
前述結晶矽系太陽電池之構造之一典型例可列舉如圖1所示之構造。概略而言,本實施形態之太陽電池10由以下所構成,即:矽基板(Si晶圓)11;受光面電極12,其形成於基板11之一面側(表面側);及鋁電極20,其形成於基板11之另一面側(背面側)。 A typical example of the structure of the above-described crystalline lanthanide solar cell can be exemplified as shown in FIG. In general, the solar cell 10 of the present embodiment is configured by a tantalum substrate (Si wafer) 11 and a light-receiving surface electrode 12 formed on one surface side (surface side) of the substrate 11 and an aluminum electrode 20, This is formed on the other surface side (back side) of the substrate 11.
本實施形態之矽基板11是由像是結晶矽、非晶矽之矽所構成。矽基板11之性狀並無特殊之限制,舉例言之,厚度可考慮所期望之太陽電池之尺寸或該基板之強度(例如斷裂強度)等而設定,通常宜設為5μm~300μm,設為例如5μm~200μm左右較佳。 The tantalum substrate 11 of the present embodiment is composed of a crucible such as a crystalline crucible or an amorphous crucible. The properties of the substrate 11 are not particularly limited. For example, the thickness may be set in consideration of the desired size of the solar cell or the strength (for example, breaking strength) of the substrate, and is usually set to 5 μm to 300 μm, for example, It is preferably about 5 μm to 200 μm.
於本實施形態之構造中,藉由pn接合形成而形成的n-Si 層16會位於基板11之p-Si層(p型結晶矽)18之受光面側。又,藉由一般之化學蒸鍍法(CVD)等而形成由氧化鈦或氮化矽所構成的防止反射膜14會位於n-Si層16之表面。此外,典型而言,藉由將銀糊網版印刷並燒成而形成由Ag所構成的受光面電極(表面電極)12會設置於防止反射膜14之表面。 In the structure of the embodiment, n-Si formed by pn junction formation The layer 16 is located on the light-receiving side of the p-Si layer (p-type crystalline germanium) 18 of the substrate 11. Further, the anti-reflection film 14 made of titanium oxide or tantalum nitride is formed on the surface of the n-Si layer 16 by a general chemical vapor deposition method (CVD) or the like. Further, typically, a light-receiving surface electrode (surface electrode) 12 made of Ag is formed by screen printing and firing a silver paste, and is provided on the surface of the anti-reflection film 14.
又,使用在此所揭示之鋁電極形成用糊組成物而形成的鋁電極20會與外部連接用電極22一同形成於p-Si層18之背面側。於本實施形態中,外部連接用電極22是在p-Si層18之背面側形成為線狀,且於形成該外部連接用電極22之領域以外之大略全面,形成具有背面電場效果之鋁電極20。又,於本實施形態之構造中,鋁電極20會形成為覆蓋外部連接用電極22之一部分(具體而言為線狀結構之兩緣部),同時具有露出外部連接用電極22之開口部23。 Moreover, the aluminum electrode 20 formed using the paste composition for forming an aluminum electrode disclosed herein is formed on the back side of the p-Si layer 18 together with the external connection electrode 22. In the present embodiment, the external connection electrode 22 is formed in a linear shape on the back side of the p-Si layer 18, and is substantially entirely integrated except for the field in which the external connection electrode 22 is formed, and an aluminum electrode having a back surface electric field effect is formed. 20. Further, in the structure of the present embodiment, the aluminum electrode 20 is formed to cover one portion of the external connection electrode 22 (specifically, both edge portions of the linear structure), and has an opening portion 23 through which the external connection electrode 22 is exposed. .
以下,說明有關本發明之數個試驗例,然而,並非意圖將本發明限制於前述試驗例所示者。 Hereinafter, several test examples of the present invention will be described. However, the present invention is not intended to be limited to the above test examples.
在此,檢討在使屬於鋁電極形成用糊組成物之固形成分的玻璃料之組成(構成成分及其比率)相互不同時之差異。 Here, the difference in the composition (composition component and ratio) of the glass frit which is a solid component of the paste composition for forming an aluminum electrode is different from each other.
於本試驗中,使用具有如以下表1所示之組成(mol%)、軟化點(℃)之合計6種之玻璃試樣(試樣1~6)。 In the test, six kinds of glass samples (samples 1 to 6) having a composition (mol%) and a softening point (°C) as shown in Table 1 below were used.
使用表1所示之各玻璃料(試樣1~6),並製作合計6種之鋁糊(試驗例1~6)。如前述,有關各試驗例之鋁糊僅玻璃料之性狀不同,其他成分(鋁粉末、有機媒液)或摻合比則作成相同。 Each of the glass frits (samples 1 to 6) shown in Table 1 was used, and a total of six kinds of aluminum pastes (test examples 1 to 6) were produced. As described above, the aluminum paste of each test example differs only in the properties of the glass frit, and the other components (aluminum powder, organic vehicle liquid) or blending ratio are made the same.
各試驗例之鋁糊之內容如下。 The contents of the aluminum paste of each test example are as follows.
(1)鋁粉末:以構成糊全體之75質量%之量,摻合、使用平均粒徑4.5μm之鋁粉末。 (1) Aluminum powder: Aluminum powder having an average particle diameter of 4.5 μm was blended and used in an amount of 75 mass% of the entire paste.
(2)玻璃料:藉由糊全體之0.01~1.00質量%之任意添加量,摻合、使用前述試樣1~6中任一者之性狀之玻璃料。 (2) Glass frit: A glass frit in which the properties of any of the above samples 1 to 6 are blended and used by any addition amount of 0.01 to 1.00% by mass of the entire paste.
(3)有機媒液:以構成糊全體之約22質量%之量,摻合、使用丁卡必醇乙酸酯作為有機溶劑。又,以構成糊全體之約2質量%之量,摻合、使用丙烯酸系樹脂作為有機黏結劑。 (3) Organic vehicle liquid: In an amount of about 22% by mass of the entire paste, tetrabutyl carbitol acetate was blended and used as an organic solvent. In addition, an acrylic resin was blended and used as an organic binder in an amount of about 2% by mass of the entire paste.
其次,使用前述所調製之試驗例1~6之鋁糊,並於矽基板之一面(背面)形成鋁電極。 Next, the aluminum paste of Test Examples 1 to 6 prepared as described above was used, and an aluminum electrode was formed on one surface (back surface) of the tantalum substrate.
具體而言,準備市售125mm正方形大小之太陽電池用p型單結晶矽基板(板厚200μm),並藉由氫氧化鈉水溶液將其表面進行鹼蝕刻處理。接著,於業已藉由前述蝕刻處理形成微細凹凸結構(組織結構)之矽基板之受光面塗佈含磷溶 液,並藉由進行熱處理,於該矽基板之受光面形成厚度約0.5μm之n-Si層(n+層)。 Specifically, a p-type single crystal ruthenium substrate (plate thickness: 200 μm) for a commercially available 125 mm square solar cell was prepared, and the surface thereof was subjected to an alkali etching treatment with an aqueous sodium hydroxide solution. Then, the phosphor-containing solution is applied to the light-receiving surface of the ruthenium substrate on which the fine uneven structure (tissue structure) is formed by the etching treatment, and by heat treatment, n-thickness of about 0.5 μm is formed on the light-receiving surface of the ruthenium substrate. Si layer (n + layer).
接著,藉由電漿CVD(PECVD)法,於n-Si層上形成厚度為50nm以上且100nm以下之防止反射膜(氮化矽膜)。再者,使用預定表面電極(Ag電極)形成用銀糊,並藉由網版印刷法,於防止反射膜上形成構成表面電極(Ag電極)之塗膜(厚度20μm以上且50μm以下)後,同樣地將構成背面電極(Ag電極)之塗膜形成為圖案狀(藉由約5mm寬度呈線狀),並使其乾燥。 Next, an antireflection film (tantalum nitride film) having a thickness of 50 nm or more and 100 nm or less is formed on the n-Si layer by a plasma CVD (PECVD) method. Further, after a silver paste for forming a predetermined surface electrode (Ag electrode) is used, and a coating film (having a thickness of 20 μm or more and 50 μm or less) constituting the surface electrode (Ag electrode) is formed on the antireflection film by a screen printing method, Similarly, the coating film constituting the back surface electrode (Ag electrode) was formed into a pattern (linearly formed by a width of about 5 mm) and dried.
藉由網版印刷(使用不鏽鋼製網眼SUS#250。),於矽基板之背面側將前述試驗例1~6中任一者之糊組成物印刷(塗佈)成與Ag電極之一部分重疊,並形成膜厚約30μm之塗佈膜。使用高速燒成爐,於大氣環境中藉由大約700℃~800℃之燒成溫度將該基板燒成1分鐘,並形成鋁電極。藉此,製得有關試驗例1~6之太陽電池。 The paste composition of any of the above Test Examples 1 to 6 was printed (coated) on the back side of the substrate by screen printing (using a stainless steel mesh SUS #250) to partially overlap the Ag electrode. And a coating film having a film thickness of about 30 μm was formed. The substrate was fired in an air atmosphere by a high-speed firing furnace at a firing temperature of about 700 ° C to 800 ° C for 1 minute to form an aluminum electrode. Thereby, the solar cells of the test examples 1 to 6 were obtained.
[外觀之確認] [confirmation of appearance]
觀察燒成後之鋁電極,並確認是否發生氣泡或鋁之凝集等之外觀不良。於表2之「外觀」欄中顯示結果。另,於該欄中,分別地,「○」是表示問題為5處以下,「△」是5~20處,「×」是20處以上。 The aluminum electrode after the firing was observed, and it was confirmed whether or not the appearance of bubbles or aluminum agglomeration occurred. The results are displayed in the "Appearance" column of Table 2. In addition, in this column, "○" indicates that the problem is 5 or less, "△" is 5 to 20, and "X" is 20 or more.
如表2所示,於使用未含有ZnO之玻璃料之試驗例2及使用MZn/MBi≦0.6之(即,相對於Bi2O3之ZnO之含有率少)玻璃料之試驗例3中,可確認許多外觀不良(典型上為氣泡)。一般認為其理由是黏結劑燒穿時鋁與矽局部性過度反應。相對於此,於使用將ZnO作為主體之玻璃料之試驗例1及使用MZn/MBi≧0.8(MZn/MBi≧1.0)之玻璃料之試驗例3~5中,可看見外觀不良少,並形成均質之BSF層。 As shown in Table 2, Test Example 2 using a glass frit not containing ZnO and Test Example 3 using a glass frit using M Zn /M Bi ≦0.6 (that is, having a small content of ZnO with respect to Bi 2 O 3 ) Among them, it can be confirmed that many appearances are poor (typically bubbles). It is generally believed that the reason is that the aluminum and the strontium are partially overreacted when the binder is burned through. On the other hand, in Test Example 1 using a glass frit containing ZnO as a main component and Test Examples 3 to 5 using a glass frit using M Zn /M Bi ≧ 0.8 (M Zn /M Bi ≧ 1.0), poor appearance was observed. Less, and form a homogeneous BSF layer.
[耐水性評價] [Water resistance evaluation]
使用前述所製得之試驗評價用電池單元(太陽電池),並評價鋁電極之耐熱水性。具體而言,準備業已保持於80℃之溫度之熱水,並使各試驗評價用電池單元浸漬於熱水中,以使鋁電極與熱水充分接觸。又,計測直到自鋁電極產生氣泡為止(即,直到鋁與水分反應而產生氫為止)之時間。另,上限是設為10分鐘。將結果以耐水時間顯示於表2之「耐水性」欄中。 The battery cells (solar cells) for test evaluation prepared above were used, and the hot water resistance of the aluminum electrodes was evaluated. Specifically, hot water which has been maintained at a temperature of 80 ° C is prepared, and each test evaluation battery unit is immersed in hot water so that the aluminum electrode is sufficiently brought into contact with hot water. Further, the time until the generation of bubbles from the aluminum electrode (that is, until the aluminum reacts with moisture to generate hydrogen) is measured. In addition, the upper limit is set to 10 minutes. The results are shown in the "water resistance" column of Table 2 in terms of water resistance time.
如表2所示,於外觀之確認中問題多的試驗例2、3中,鋁電極於10分鐘以內劣化,且耐水熱性相對低。相對 於此,於試驗例1及3~5中,可看見顯示相對高之耐水熱性。 As shown in Table 2, in Test Examples 2 and 3, which had many problems in the confirmation of the appearance, the aluminum electrode was deteriorated within 10 minutes, and the hydrothermal resistance was relatively low. relatively Here, in Test Examples 1 and 3 to 5, it was found that the water heat resistance was relatively high.
[電特性評價] [Electrical characteristic evaluation]
使用前述所製得之試驗評價用電池單元(太陽電池),並依據JIS C8913(1998)評價電特性。表2顯示光轉換效率(Eff)、開放電壓(VOC)、短路電流(ISC)、填充因數(FF)、串聯電阻(RS)、並聯電阻(RSh)。另,於表2中,係令有關試驗例1之結果為100而按相對評價來表示。 The battery cells (solar cells) for test evaluation prepared above were used, and the electrical characteristics were evaluated in accordance with JIS C8913 (1998). Table 2 shows light conversion efficiency (Eff), open voltage (V OC ), short circuit current (I SC ), fill factor (FF), series resistance (R S ), and parallel resistance (R Sh ). In addition, in Table 2, the result of the test example 1 was 100 and it was represented by relative evaluation.
如表2所示,於ZnO之莫耳含有率MZn相對於Bi2O3之莫耳含有率MBi之比(MZn/MBi)滿足0.8~2.5(特別是1~2)之試驗例4~6中,可看見利用開放電壓(VOC)之提升的光轉換效率(Eff)之大幅提升,並得知顯示優異之電特性。其中,於試驗例4、5中,除了前述VOC外,亦看見起因於填充因數(FF)之提升的Eff之提升,並得知顯示更加優異之電特性。 As shown in Table 2, the ZnO in the molar ratio of containing the test with respect to the M Bi (M Zn / M Bi) Bi 2 O 3 mole ratio of satisfied containing 0.8 to 2.5 (particularly 1 to 2) the ratio M Zn In Examples 4 to 6, a significant increase in the light conversion efficiency (Eff) using the increase in the open voltage (V OC ) was observed, and it was found that excellent electrical characteristics were exhibited. Among them, in Test Examples 4 and 5, in addition to the aforementioned V OC , an increase in Eff due to an increase in the fill factor (FF) was also observed, and it was found that more excellent electrical characteristics were exhibited.
[剝離強度評價] [Peel strength evaluation]
使用前述所製得之試驗評價用電池單元(太陽電池),並測定鋁電極之剝離強度(膠帶脫出拉力)。具體而言,在藉由手指將住友3M製斯高(Scotch)膠帶按壓於各試驗評價用電池單元之鋁電極形成部位後,將膠帶剝下,並藉由目視,觀察附著於所剝離之膠帶面之電極之樣子。於表2之「剝離」欄中顯示結果。於該欄中,「○」是表示電極未附著於所按壓之膠帶。另一方面,藉由「×」來表示電極附著於所按壓之膠帶之情形。 The battery cell (solar cell) for test evaluation prepared above was used, and the peel strength (tape pull-out force) of the aluminum electrode was measured. Specifically, after the Sumitomo 3M Scotch tape was pressed against the aluminum electrode forming portion of each test evaluation battery unit by a finger, the tape was peeled off, and the tape attached to the peeled tape was observed by visual observation. The appearance of the electrode. The results are shown in the "Peeling" column of Table 2. In the column, "○" indicates that the electrode is not attached to the pressed tape. On the other hand, the case where the electrode is attached to the pressed tape is indicated by "x".
如表2所示,於試驗例1中,接著強度低。一般認 為其理由是燒成時抑制鋁與矽之界面反應。相對於此,於試驗例2~6中,得知顯示相對高之接著強度。 As shown in Table 2, in Test Example 1, the strength was low. General recognition The reason for this is that the interface reaction between aluminum and bismuth is suppressed at the time of firing. On the other hand, in Test Examples 2 to 6, it was found that the relatively high bonding strength was exhibited.
如由前述實施形態或試驗例之揭示中可明白,使用在此所揭示之糊組成物而構成之鋁電極可均質地形成BSF層,且導電性、接著強度或耐水性優異。故,於具備前述電極之太陽電池中,可大幅地提升電特性(例如光轉換效率、開放電壓或填充因數),再者,可長期穩定發揮前述高性能。 As is apparent from the above-described embodiments or test examples, the aluminum electrode formed using the paste composition disclosed herein can form a BSF layer homogeneously, and is excellent in electrical conductivity, adhesion strength, or water resistance. Therefore, in the solar cell including the electrode described above, electrical characteristics (for example, light conversion efficiency, open voltage, or fill factor) can be greatly improved, and the high performance can be stably exhibited for a long period of time.
以上,詳細地說明本發明,然而,該等不過是例示,本發明亦可於另外其他之態樣中實施,且可於未脫離其主旨之範圍施加各種變更。 The present invention has been described in detail above. The present invention may be embodied in other specific forms, and various modifications may be made without departing from the spirit and scope of the invention.
10‧‧‧太陽電池 10‧‧‧Solar battery
11‧‧‧p型矽基板(Si晶圓) 11‧‧‧p-type germanium substrate (Si wafer)
12‧‧‧受光面電極(表面電極) 12‧‧‧Photometric surface electrode (surface electrode)
14‧‧‧防止反射膜 14‧‧‧Anti-reflection film
16‧‧‧n-Si層(n+層) 16‧‧‧n-Si layer (n + layer)
18‧‧‧p-Si層 18‧‧‧p-Si layer
20‧‧‧鋁電極(背面電極) 20‧‧‧Aluminum electrode (back electrode)
22‧‧‧外部連接用電極 22‧‧‧External connection electrode
23‧‧‧開口部 23‧‧‧ openings
24‧‧‧p+層(BSF層) 24‧‧‧p + layer (BSF layer)
Claims (8)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013096933A JP2014220293A (en) | 2013-05-02 | 2013-05-02 | Solar cell and paste composition for forming aluminum electrode for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201500313A true TW201500313A (en) | 2015-01-01 |
Family
ID=51843543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103115701A TW201500313A (en) | 2013-05-02 | 2014-05-01 | Solar cell and solar cell forming paste composition for solar cell |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2014220293A (en) |
| TW (1) | TW201500313A (en) |
| WO (1) | WO2014178419A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106251930A (en) * | 2016-08-11 | 2016-12-21 | 通威太阳能(合肥)有限公司 | Anti-tearing aluminum paste for back electric field of battery piece |
| CN107592944A (en) * | 2015-05-01 | 2018-01-16 | 东洋铝株式会社 | PERC types aluminum paste composition used for solar batteries |
| CN109564945A (en) * | 2016-08-23 | 2019-04-02 | 纳美仕有限公司 | Conductive paste and solar battery |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6688500B2 (en) * | 2016-06-29 | 2020-04-28 | ナミックス株式会社 | Conductive paste and solar cell |
| JP2021040123A (en) * | 2019-08-27 | 2021-03-11 | Agc株式会社 | Glass composition, glass powder and conductive paste |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5608735B2 (en) * | 2010-04-02 | 2014-10-15 | 株式会社ノリタケカンパニーリミテド | Solar cell paste composition, method for producing the same, and solar cell |
| TW201250716A (en) * | 2011-06-03 | 2012-12-16 | Noritake Co Ltd | Solar cell and paste composition for forming aluminum electrode of solar cell |
-
2013
- 2013-05-02 JP JP2013096933A patent/JP2014220293A/en active Pending
-
2014
- 2014-05-01 WO PCT/JP2014/062041 patent/WO2014178419A1/en not_active Ceased
- 2014-05-01 TW TW103115701A patent/TW201500313A/en unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107592944A (en) * | 2015-05-01 | 2018-01-16 | 东洋铝株式会社 | PERC types aluminum paste composition used for solar batteries |
| TWI667218B (en) * | 2015-05-01 | 2019-08-01 | 日商東洋鋁股份有限公司 | PERC type aluminum paste composition for solar cells |
| CN107592944B (en) * | 2015-05-01 | 2019-11-29 | 东洋铝株式会社 | PERC type aluminum paste composition used for solar batteries |
| CN106251930A (en) * | 2016-08-11 | 2016-12-21 | 通威太阳能(合肥)有限公司 | Anti-tearing aluminum paste for back electric field of battery piece |
| CN106251930B (en) * | 2016-08-11 | 2017-10-27 | 通威太阳能(合肥)有限公司 | Anti-tearing aluminum paste for back electric field of battery piece |
| CN109564945A (en) * | 2016-08-23 | 2019-04-02 | 纳美仕有限公司 | Conductive paste and solar battery |
| CN109564945B (en) * | 2016-08-23 | 2022-11-29 | 纳美仕有限公司 | Conductive paste and solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014220293A (en) | 2014-11-20 |
| WO2014178419A1 (en) | 2014-11-06 |
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