TW201411657A - Silver paste including fined glass particles and use thereof in production of photovoltaic device - Google Patents
Silver paste including fined glass particles and use thereof in production of photovoltaic device Download PDFInfo
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- 239000002245 particle Substances 0.000 title claims abstract description 90
- 239000011521 glass Substances 0.000 title claims abstract description 83
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 56
- 239000004332 silver Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 11
- 230000003667 anti-reflective effect Effects 0.000 claims description 7
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 229940116411 terpineol Drugs 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 150000002009 diols Chemical class 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000010344 co-firing Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- -1 silver-aluminum Chemical compound 0.000 description 2
- CZZHWOVAYRGSQD-UHFFFAOYSA-N CC(C)=C.CC(CO)(C(C(C)C)O)C Chemical group CC(C)=C.CC(CO)(C(C(C)C)O)C CZZHWOVAYRGSQD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本發明關於一種銀漿(silver paste)及其用於製造光伏元件(photovoltaic device)之用途，並且特別地，關於包含細化玻璃顆粒之銀漿及其用於製造光伏元件之用途。 The present invention relates to a silver paste and its use for the manufacture of photovoltaic devices, and in particular to silver pastes comprising refined glass particles and their use for the manufacture of photovoltaic elements.
光伏元件(photovoltaic device)因為其將發自光源(例如，太陽光)中容易取得的能量轉換成電力，以操控例如，計算機、電腦、加熱器…，等電子裝置，所以光伏元件已被廣泛地使用。最常見的光伏元件即為矽基太陽能電池。 Photovoltaic devices have been widely used because they convert energy that is easily obtained from a light source (eg, sunlight) into electricity to manipulate electronic devices such as computers, computers, heaters, and the like. use. The most common photovoltaic component is a germanium based solar cell.
矽基太陽能電池係指利用取自單晶矽晶棒或多晶矽鑄錠之結晶矽基材所製作的太陽能電池。在矽基太陽能電池上形成電極的先前技術，先在矽基太陽能電池的正表面及背表面上利用網版印刷等製程塗佈金屬漿料後，需要執行兩次燒結程序，才能形成具有良好的歐姆接觸之金屬電極。典型的矽基太陽能電池，其正表面塗佈導電銀漿，其背表面塗佈導電鋁漿以及導電銀漿(或導電銀鋁漿)。 A ruthenium-based solar cell refers to a solar cell fabricated using a crystalline ruthenium substrate obtained from a single crystal twin rod or a polycrystalline tantalum ingot. In the prior art for forming an electrode on a ruthenium-based solar cell, after the metal paste is coated on the front surface and the back surface of the ruthenium-based solar cell by a process such as screen printing, it is necessary to perform two sintering processes to form a good one. Ohmic contact metal electrode. A typical bismuth-based solar cell is coated with a conductive silver paste on its front surface and a conductive aluminum paste and a conductive silver paste (or conductive silver-aluminum paste) on its back surface.
已有共燒技術(co-firing)運用在矽基太陽能電池的電極之行程，共燒技術則只需執行一次燒結程序，即同時形成具有良好的歐姆接觸的正面電極以及供焊接用的匯流排電極(bus bar)、鋁形成的背面電極以及供焊接用的背面匯流排電極。正面電極包含線寬較細的網柵電極以及線寬較粗且供焊接用的正面匯流排電極。鋁局部擴散至矽基太陽能電池的背表面裡，形成了背表面電場(back surface filed,BSF)。背表面電場反射少數載子並增加多數載子的收集再傳輸至銀或銀鋁形成的背面電極，進而提升矽基太陽能電池的整體效能。 Co-firing technology has been applied to the electrode of the bismuth-based solar cell, and the co-firing technology only needs to perform a sintering process, that is, a front electrode having good ohmic contact and a bus bar for soldering are simultaneously formed. A bus bar, a back electrode formed of aluminum, and a back bus bar electrode for soldering. The front electrode includes a grid electrode having a thin line width and a front bus bar electrode having a thick line width and used for soldering. The aluminum partially diffuses into the back surface of the germanium-based solar cell to form a back surface filed (BSF). The back surface electric field reflects minority carriers and increases the collection of most carriers to be transmitted to the back electrode formed of silver or silver aluminum, thereby improving the overall efficiency of the germanium-based solar cell.
然而，現有應用在製造光伏元件的電極之銀漿，其混入的玻璃 顆粒之粒徑皆為微米尺度，未見有部分以細化玻璃顆粒(次微米尺度)取代之，以提升應用其所製造的光伏元件之光電轉換效率。 However, existing applications in the manufacture of silver electrodes for the electrodes of photovoltaic elements, the mixed glass The particle size of the particles is on the micrometer scale, and no part is replaced by refined glass particles (sub-micron scale) to improve the photoelectric conversion efficiency of the photovoltaic elements manufactured by the application.
因此，本發明所欲解決的技術問題在於提供一種包含細化玻璃顆粒之銀漿及其用於製造光伏元件之用途。本發明之銀漿用於製造光伏元件之正面電極時，可以提升光伏元件的光電轉換效率。 Accordingly, the technical problem to be solved by the present invention is to provide a silver paste comprising refined glass particles and their use for the manufacture of photovoltaic elements. When the silver paste of the present invention is used for the front electrode of a photovoltaic element, the photoelectric conversion efficiency of the photovoltaic element can be improved.
本發明之一較佳具體實施例之一種銀漿，包含有機載體(organic vehicle)、第一玻璃顆粒(glass frit)、第二玻璃顆粒以及奈米銀顆粒(silver particle)。特別地，本發明之銀漿其第一玻璃顆粒之比表面積為約1.6~1.7m2/g，第二玻璃顆粒之比表面積為約26~27m2/g。第一玻璃顆粒與第二波璃顆粒混合後之比表面積的範圍為約2~20m2/g。藉此，讓本發明之銀漿用於製造光伏元件之正面電極時，可以提升光伏元件的光電轉換效率。 A silver paste according to a preferred embodiment of the present invention comprises an organic vehicle, a first glass frit, a second glass particle, and a silver particle. In particular, the silver paste of the present invention has a first glass particle having a specific surface area of about 1.6 to 1.7 m 2 /g and a second glass particle having a specific surface area of about 26 to 27 m 2 /g. The specific surface area of the first glass particles after mixing with the second glass particles ranges from about 2 to 20 m 2 /g. Thereby, when the silver paste of the present invention is used for the front electrode of a photovoltaic element, the photoelectric conversion efficiency of the photovoltaic element can be improved.
於一具體實施例中，第二玻璃顆粒佔第一玻璃顆粒加上第二玻璃顆粒之重量百分比為約1~75。 In one embodiment, the second glass particles comprise from about 1 to about 75 percent by weight of the first glass particles plus the second glass particles.
於一具體實施例中，有機載體佔本發明之銀漿的重量百分比為約1~10，第一玻璃顆粒加上第二玻璃顆粒佔本發明之銀漿的重量百分比為約1~7，以及銀顆粒佔本發明之銀漿的重量百分比的其餘部分。 In one embodiment, the organic carrier comprises about 1 to 10 by weight of the silver paste of the present invention, and the first glass particles plus the second glass particles comprise about 1 to 7 by weight of the silver paste of the present invention, and The silver particles constitute the remainder of the weight percent of the silver paste of the present invention.
於一具體實施例中，玻璃顆粒為Si-Pb-B-O、PbO、PbO-SiO2、PbO-B2O3玻璃顆粒或含碲粉之玻璃顆粒。 In one embodiment, the glass particles are Si-Pb-BO, PbO, PbO-SiO 2 , PbO-B 2 O 3 glass particles or glass particles containing barium powder.
於一具體實施例中，有機載體包含約10 wt.%的固態纖維素聚合物、約0~20 wt.%的2,2,4-三甲基-1,3-戊二醇單異丁酸酯以及佔有機載體之重量百分比的其餘部分的松油醇。 In one embodiment, the organic vehicle comprises about 10 wt.% solid cellulosic polymer, about 0-20 wt.% of 2,2,4-trimethyl-1,3-pentanediol monoisobutylene. The acid ester and the rest of the terpineol which is the weight percent of the organic vehicle.
本發明之一較佳具體實施例之一種製造光伏元件之方法首先係 先製備半導體結構組合。半導體結構組合包含至少一p-n接面，並且具有正表面。接著，本發明之方法係選擇性塗佈並烘乾本發明揭示的銀漿於正表面上，以形成多條平行的第一導電條於正表面上。接著，本發明之方法係選擇性塗佈並烘乾金屬漿於正表面上，以形成至少一條與多條第一導電條垂直的第二導電條於正表面上。最後，本發明之方法係燒結多條第一導電條以及至少一條第二導電條，以形成正面電極於正表面上。 A method of manufacturing a photovoltaic element according to a preferred embodiment of the present invention is first A semiconductor structure combination is prepared first. The semiconductor structure combination includes at least one p-n junction and has a positive surface. Next, the method of the present invention selectively coats and dries the silver paste disclosed in the present invention on the front surface to form a plurality of parallel first conductive strips on the front surface. Next, the method of the present invention selectively coats and dries the metal paste on the front surface to form at least one second conductive strip perpendicular to the plurality of first conductive strips on the front surface. Finally, the method of the present invention sinters a plurality of first conductive strips and at least one second conductive strip to form a front surface electrode on a front surface.
於一具體實施例中，半導體結構組合並且包含抗反射層。反射層提供半導體結構組合之正表面。 In a specific embodiment, the semiconductor structures are combined and comprise an anti-reflective layer. The reflective layer provides the front surface of the semiconductor structure combination.
於一具體實施例中，半導體結構組合並且包含鈍化層。鈍化層提供半導體結構組合之正表面。 In a specific embodiment, the semiconductor structures combine and include a passivation layer. The passivation layer provides the front surface of the semiconductor structure combination.
於一具體實施例中，金屬漿即為本發明揭示的銀漿。 In one embodiment, the metal paste is the silver paste disclosed herein.
與先前技術相較，根據本發明之銀漿用於製造光伏元件之正面電極時，可以提升光伏元件的光電轉換效率。 Compared with the prior art, the silver paste according to the present invention can improve the photoelectric conversion efficiency of the photovoltaic element when it is used to manufacture the front electrode of the photovoltaic element.
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。 The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.
本發明之一較佳具體實施例之一種銀漿，包含有機載體、第一玻璃顆粒、第二玻璃顆粒以及銀顆粒。特別地，第一玻璃顆粒微較粗的玻璃顆粒，第二玻璃顆粒為經細化的玻璃顆粒。本發明之銀漿其第一玻璃顆粒之比表面積為約1.6~1.7m2/g，第二玻璃顆粒之比表面積為約26~27m2/g。第一玻璃顆粒與第二波璃顆粒混合後之比表面積的範圍為約2~20m2/g。藉此，讓本發明之銀漿用於製造光伏元件之正面電極時，可以提升光伏元件的光電轉換效率。 A silver paste according to a preferred embodiment of the present invention comprises an organic vehicle, first glass particles, second glass particles, and silver particles. In particular, the first glass particles are slightly coarser glass particles and the second glass particles are refined glass particles. The silver paste of the present invention has a first glass particle having a specific surface area of about 1.6 to 1.7 m 2 /g and a second glass particle having a specific surface area of about 26 to 27 m 2 /g. The specific surface area of the first glass particles after mixing with the second glass particles ranges from about 2 to 20 m 2 /g. Thereby, when the silver paste of the present invention is used for the front electrode of a photovoltaic element, the photoelectric conversion efficiency of the photovoltaic element can be improved.
於實際應用中，第二玻璃顆粒之粒徑小於約0.2μm。 In practical applications, the second glass particles have a particle size of less than about 0.2 [mu]m.
於一具體實施例中，第二玻璃顆粒佔第一玻璃顆粒加上第二玻璃顆粒之重量百分比為約1~75。於一案例中，第一玻璃顆之比表面積為約1.6184m2/g，添加比表面積為約26.001m2/g且佔所有玻璃顆粒之75wt.%的第二玻璃顆粒後，整體玻璃顆粒的比表面積變為約19.9053m2/g。 In one embodiment, the second glass particles comprise from about 1 to about 75 percent by weight of the first glass particles plus the second glass particles. In one case, the first glass particles have a specific surface area of about 1.6184 m 2 /g, and after adding a second glass particle having a specific surface area of about 26.001 m 2 /g and accounting for 75 wt.% of all the glass particles, the overall glass particles The specific surface area became about 19.9053 m 2 /g.
於一具體實施例中，有機載體佔本發明之銀漿的重量百分比為約1~10，第一玻璃顆粒加上第二玻璃顆粒佔本發明之銀漿的重量百分比為約1~7，以及銀顆粒佔本發明之銀漿的重量百分比的其餘部分。 In one embodiment, the organic carrier comprises about 1 to 10 by weight of the silver paste of the present invention, and the first glass particles plus the second glass particles comprise about 1 to 7 by weight of the silver paste of the present invention, and The silver particles constitute the remainder of the weight percent of the silver paste of the present invention.
於一具體實施例中，玻璃顆粒為Si-Pb-B-O、PbO、PbO-SiO2或PbO-B2O3玻璃顆粒。 In one embodiment, the glass particles are Si-Pb-BO, PbO, PbO-SiO 2 or PbO-B 2 O 3 glass particles.
於一具體實施例中，有機載體包含約10 wt.%的固態纖維素聚合物(solid cellulose polymer)、約0~20 wt.%的2,2,4-三甲基-1,3-戊二醇單異丁酸酯以及佔有機載體之重量百分比的其餘部分的松油醇(Terpineol)。 In one embodiment, the organic vehicle comprises about 10 wt.% solid cellulose polymer, about 0-20 wt.% of 2,2,4-trimethyl-1,3-penta The diol monoisobutyrate and the remainder of the organic vehicle are terpineol (Terpineol).
請參閱圖1、圖2及圖3A至圖3D，圖1係根據本發明之方法所製造光伏元件1(例如，矽基太陽能電池)的頂視圖。圖2係根據本發明之方法所製造光伏元件1的底視圖。圖3A至圖3D係以截面視圖繪示本發明之方法之一較佳具體實施例來製造如圖1沿A-A線的剖面視圖所示之光伏元件1。 Referring to Figures 1, 2 and 3A to 3D, Figure 1 is a top plan view of a photovoltaic element 1 (e.g., a germanium-based solar cell) fabricated in accordance with the method of the present invention. Figure 2 is a bottom view of a photovoltaic element 1 produced in accordance with the method of the present invention. 3A through 3D are cross-sectional views showing a preferred embodiment of the method of the present invention for fabricating the photovoltaic element 1 as shown in the cross-sectional view taken along line A-A of Fig. 1.
如圖1及圖2所示，根據本發明之方法所製造光伏元件1包含半導體結構組合10、正面電極12、背面電極14以及至少一背面匯流排電極(16a、16b)。半導體結構組合10具有正表面102以及背表面104。 As shown in FIGS. 1 and 2, the photovoltaic element 1 fabricated in accordance with the method of the present invention comprises a semiconductor structure assembly 10, a front side electrode 12, a back side electrode 14, and at least one back side bus bar electrode (16a, 16b). The semiconductor structure assembly 10 has a front surface 102 and a back surface 104.
正面電極12係形成在半導體結構組合10之正表面102上。如圖 1所示，正面電極12包含線寬較細的網柵電極(grid)122以及線寬較粗的至少一正面匯流排電極124。至少一正面匯流排電極124係沿圖1中Y方向排列，且供光伏元件1串聯時焊接之用。一般光伏元件1(例如，矽基太陽能電池)會有兩條或三條正面匯流排電極124。 Front electrode 12 is formed on front surface 102 of semiconductor structure assembly 10. As shown As shown in FIG. 1, the front electrode 12 includes a grid electrode 122 having a thin line width and at least one front bus bar electrode 124 having a thick line width. At least one front bus bar electrode 124 is arranged in the Y direction of FIG. 1 and is used for soldering when the photovoltaic elements 1 are connected in series. Typically, photovoltaic element 1 (e.g., a germanium based solar cell) will have two or three front bus bar electrodes 124.
至少一背面匯流排電極(16a、16b)係形成在半導體結構組合10之該背表面104上，且供光伏元件1串聯時焊接之用。於如圖2所示的案例中，兩條平行的背面匯流排電極(16a、16b)成對稱排列，且沿圖2中Y方向排列。 At least one back bus bar electrode (16a, 16b) is formed on the back surface 104 of the semiconductor structure assembly 10 and is used for soldering the photovoltaic elements 1 in series. In the case shown in FIG. 2, two parallel back bus electrodes (16a, 16b) are arranged symmetrically and arranged in the Y direction in FIG.
背電極14係形成在半導體結構組合10之背表面104上，且覆蓋背表面104上形成至少一背面匯流排電極(16a、16b)以外的區域。 The back electrode 14 is formed on the back surface 104 of the semiconductor structure assembly 10 and covers a region other than at least one back bus bar electrode (16a, 16b) formed on the back surface 104.
如圖3A所示，本發明之方法，首先，係製備半導體結構組合10。半導體結構組合10包含至少一p-n接面106並且具有正表面102以及背表面104。根據本發明之方法所製造的光伏元件1在使用過程，正表面102朝上，將面向太陽。為降低入射太陽光的反射率，如圖3A所示，正表面102經粗紋化處理成粗糙表面為佳。 As shown in FIG. 3A, the method of the present invention, first, produces a semiconductor structure assembly 10. The semiconductor structure assembly 10 includes at least one p-n junction 106 and has a front surface 102 and a back surface 104. The photovoltaic element 1 produced in accordance with the method of the present invention, during use, has a front surface 102 facing upwards that will face the sun. In order to reduce the reflectance of the incident sunlight, as shown in FIG. 3A, the front surface 102 is roughened to a rough surface.
接著，如圖3B所示，本發明之方法係選擇性塗佈並烘乾本發明揭示的銀漿於半導體結構組合10的正表面102上，以形成多條平行的第一導電條122’於正表面102上。接著，本發明之方法係選擇性塗佈並烘乾第一金屬漿於正表面102上，以形成至少一條與多條第一導電條122’垂直的第二導電條124’。 Next, as shown in FIG. 3B, the method of the present invention selectively coats and dries the silver paste disclosed in the present invention on the front surface 102 of the semiconductor structure assembly 10 to form a plurality of parallel first conductive strips 122'. On the front surface 102. Next, the method of the present invention selectively coats and dries the first metal paste on the front surface 102 to form at least one second conductive strip 124' perpendicular to the plurality of first conductive strips 122'.
於一具體實施例中，形成第二導電條124’的第一金屬漿即為本發明揭示的銀漿。 In one embodiment, the first metal paste forming the second conductive strip 124' is the silver paste disclosed herein.
同樣示於圖3B，本發明之方法係在半導體結構組合10之背表面104上，塗佈並烘乾第二金屬漿，以形成導電層14'。 Also shown in Figure 3B, the method of the present invention is applied to the back surface 104 of the semiconductor structure assembly 10 to coat and dry the second metal paste to form a conductive layer 14 ' .
於一具體實施例中，第二金屬漿可以由鋁、銀、銅、金、鉑、 鈀、鋁合金、銀合金、銅合金、金合金、鉑合金、鈀合金或其混合物形成之顆粒混合成的導電漿，或其他商用導電金屬漿料。第二金屬漿係由鋁顆粒混合成的導電漿料為佳。 In a specific embodiment, the second metal paste may be made of aluminum, silver, copper, gold, platinum, A conductive paste obtained by mixing particles formed of palladium, aluminum alloy, silver alloy, copper alloy, gold alloy, platinum alloy, palladium alloy or a mixture thereof, or other commercially available conductive metal paste. The second metal paste is preferably a conductive paste in which aluminum particles are mixed.
同樣示於圖3B，本發明之方法係在半導體結構組合10之背表面104上，選擇性塗佈並烘乾第三金屬漿，以形成至少一條平行的第三導電條(16a'、16b')於背表面104上。 Also shown in Figure 3B, the method of the present invention is applied to the back surface 104 of the semiconductor structure assembly 10 to selectively coat and dry the third metal paste to form at least one parallel third conductive strip (16a ' , 16b ' ) on the back surface 104.
於一具體實施例中，第三金屬漿可以由鋁、銀、銅、金、鉑、鈀、鋁合金、銀合金、銅合金、金合金、鉑合金、鈀合金或其混合物形成之顆粒混合成的導電漿，或其他商用導電金屬漿料。第三金屬漿係由銀顆粒與鋁顆粒混合成的導電漿為佳。 In a specific embodiment, the third metal paste may be mixed with particles formed of aluminum, silver, copper, gold, platinum, palladium, aluminum alloy, silver alloy, copper alloy, gold alloy, platinum alloy, palladium alloy or a mixture thereof. Conductive paste, or other commercially available conductive metal paste. The third metal paste is preferably a conductive paste in which silver particles and aluminum particles are mixed.
最後，如圖3C所示，本發明之方法係燒結多條第一導電條122’以及至少一條第二導電條124’，以形成正面電極12於正表面102上。也就是說，正面電極12是由經燒結的第一導電條122以及經燒結的第二導電條124所構成。經燒結的第一導電條122即為線寬較細的網柵電極122。經燒結的第二導電條124即為線寬較粗的正面匯流排電極124。本發明之方法並且燒結導電層14'，即燒結成背面電極14，並且燒結至少一條第三導電條(16a'、16b')，即燒結成至少一背面匯流排電極(16a、16b)。正面電極12與背面電極14、至少一背面匯流排電極(16a、16b)可以藉由不同的燒結製程分別形成，也可以藉由共燒製程一次形成。 Finally, as shown in FIG. 3C, the method of the present invention sinters a plurality of first conductive strips 122' and at least one second conductive strip 124' to form front side electrodes 12 on front surface 102. That is, the front electrode 12 is composed of the sintered first conductive strip 122 and the sintered second conductive strip 124. The sintered first conductive strip 122 is a mesh gate electrode 122 having a thin line width. The sintered second conductive strip 124 is a front side bus bar electrode 124 having a relatively large line width. The method of the present invention also sinters the conductive layer 14 ' , i.e., is sintered into the back electrode 14, and sinters at least one third conductive strip (16a ' , 16b ' ), i.e., sintered into at least one backside bus electrode (16a, 16b). The front electrode 12 and the back electrode 14 and the at least one back bus electrode (16a, 16b) may be formed separately by different sintering processes, or may be formed once by a co-firing process.
於一具體實施例中，半導體結構組合10包含p型態結晶矽基材101，並且在p型態結晶矽基材101的表面植佈n型態摻雜以形成n型態區域。如圖3A所示，本發明之方法形成鈍化層108覆蓋該n型態區域，鈍化層108提供正表面102。如圖3D所示，本發明之方法進一步形成抗反射層18，抗反射層18覆蓋鈍化層108。於另一具體實施例中，反射層18提供正表面102。 In one embodiment, the semiconductor structure assembly 10 includes a p-type crystalline germanium substrate 101, and n-type doping is implanted on the surface of the p-type crystalline germanium substrate 101 to form an n-type region. As shown in FIG. 3A, the method of the present invention forms a passivation layer 108 overlying the n-type region, and a passivation layer 108 provides a front surface 102. As shown in FIG. 3D, the method of the present invention further forms an anti-reflective layer 18 that covers the passivation layer 108. In another embodiment, the reflective layer 18 provides a front surface 102.
於另一具體實施例中，半導體結構組合10包含n型態結晶矽基材101，並且在n型態結晶矽基材101的表面植佈p型態摻雜以形成p型態區域。如圖3A所示，本發明之方法形成鈍化層108覆蓋該p型態區域，鈍化層108提供正表面102。如圖3D所示，本發明之方法進一步形成抗反射層18，抗反射層18覆蓋鈍化層108。於另一具體實施例中，抗反射層18提供正表面102。 In another embodiment, the semiconductor structure assembly 10 comprises an n-type crystalline germanium substrate 101, and a p-type doped is implanted on the surface of the n-type crystalline germanium substrate 101 to form a p-type region. As shown in FIG. 3A, the method of the present invention forms a passivation layer 108 overlying the p-type region, and a passivation layer 108 provides a positive surface 102. As shown in FIG. 3D, the method of the present invention further forms an anti-reflective layer 18 that covers the passivation layer 108. In another embodiment, the anti-reflective layer 18 provides a front surface 102.
於另一具體實施例中，半導體結構組合10即為如美國專利公告號第5,935,344號所揭示的矽異質接面太陽能電池(silicon heterojunction solar cell)其結構。矽異質接面太陽能電池的結構請參考美國專利公告號第5,935,344號，在此不再贅述。 In another embodiment, the semiconductor structure assembly 10 is a structure of a silicon heterojunction solar cell as disclosed in U.S. Patent No. 5,935,344. For the structure of the heterojunction solar cell, please refer to U.S. Patent No. 5,935,344, which is not described here.
請參閱表1，為四種根據本發明揭示的銀漿(第二玻璃顆粒之重量百分比不同)以及不含第二玻璃顆粒之銀漿之成份列表。這些銀漿中的所有玻璃顆粒佔重量百分比皆為約5.5wt.%，且用於製造矽基太陽能電池(對照組一、電池A、電池B、電池C、電池D)的正面電極且在810℃下燒結成正面電極。製成的該等太陽能電池測得的光電轉換效率(η)以及綜合性評估指標-填充因子(fill factor,FF)也列於表1。該等太陽能電池的背面電極是使用市售的鋁漿塗佈、燒結製成，其背面匯流排電極是使用市售的銀漿塗佈、燒結製成。 Referring to Table 1, there is a list of four components of the silver paste (the weight percentage of the second glass particles) and the silver paste containing no second glass particles disclosed in accordance with the present invention. All of the glass particles in the silver paste accounted for about 5.5 wt.% by weight, and were used to manufacture the front electrode of the ruthenium-based solar cell (control one, battery A, battery B, battery C, battery D) and at 810. Sintered into a front electrode at °C. The photoelectric conversion efficiency (η) measured by the prepared solar cells and the comprehensive evaluation index-fill factor (FF) are also shown in Table 1. The back electrode of these solar cells was coated and sintered using a commercially available aluminum paste, and the back bus bar electrodes were coated and sintered using a commercially available silver paste.
請參閱表2，為另外四種根據本發明揭示的銀漿(第二玻璃顆粒之重量百分比不同)以及不含第二玻璃顆粒之銀漿之成份列表。這些銀漿中的所有玻璃顆粒佔重量百分比皆為約6wt.%，且用於製造矽基太陽能電池(對照組二、電池E、電池F、電池G、電池H)的正面電極且在810℃下燒結成正面電極。製成的該等太陽能電池測得的光電轉換效率(η)以及綜合性評估指標-填充因子也列於表2。該等太陽能電池的背面電極是使用市售的鋁漿塗佈、燒結製成，其背面匯流排電極是使用市售的銀漿塗佈、燒結製成。 Please refer to Table 2 for a list of the other four silver pastes according to the present invention (the weight percentage of the second glass particles are different) and the composition of the silver paste containing no second glass particles. All of the glass particles in the silver paste accounted for about 6 wt.% by weight, and were used to manufacture the front electrode of the ruthenium-based solar cell (control group 2, battery E, battery F, battery G, battery H) at 810 ° C. Sintered into a front electrode. The photoelectric conversion efficiency (η) and the comprehensive evaluation index-fill factor measured by the fabricated solar cells are also shown in Table 2. The back electrode of these solar cells was coated and sintered using a commercially available aluminum paste, and the back bus bar electrodes were coated and sintered using a commercially available silver paste.
請參閱圖4及圖5。圖4為表1及表2中太陽能電池之光電轉換效率隨著第二玻璃顆粒(經細化的玻璃顆粒)佔所有玻璃顆粒的重量百分比增加之變化。圖5為表1及表2中太陽能電池之填充因子隨著第二玻璃顆粒(經細化的玻璃顆粒)佔所有玻璃顆粒的重量百分比增加之變化。 Please refer to Figure 4 and Figure 5. Figure 4 is a graph showing the change in the photoelectric conversion efficiency of the solar cell in Tables 1 and 2 as the weight percentage of the second glass particles (refined glass particles) to all the glass particles. Figure 5 is a graph showing the change in the fill factor of the solar cells in Tables 1 and 2 as the weight percentage of the second glass particles (refined glass particles) to all of the glass particles.
從圖4及圖5的測試數據，可以清楚看出根據本發明之銀漿用於電池A、電池B、電池C、電池D、電池E、電池F、電池G、電池H的正面電極，隨著第二玻璃顆粒(經細化的玻璃顆粒)佔所有玻璃顆粒的重量百分比增加，光電轉換效率及填充因子逐漸增加再逐漸下降，可能是因第二玻璃顆粒(經細化的玻璃顆粒)過多產生聚集不易分散而導致電轉換效率及填充因子開始下降。做為對照的銀漿，因為不含第二玻璃顆粒，用於對照組一及對照組二的太陽能電池的正面電極，其光電轉換效率及填充因子皆遠低於電池A、電池B、電池C、電池E、電池F、電池G、電池H之數據。由此足以證明，根據本發明之銀漿用於製造光伏元件之正面電極時，能提升光源元件的光電轉換效率以及填充因子。 From the test data of FIG. 4 and FIG. 5, it can be clearly seen that the silver paste according to the present invention is used for the front electrodes of the battery A, the battery B, the battery C, the battery D, the battery E, the battery F, the battery G, and the battery H, with The second glass particles (reduced glass particles) account for an increase in the weight percentage of all glass particles, and the photoelectric conversion efficiency and the filling factor gradually increase and then gradually decrease, possibly due to excessive second glass particles (reduced glass particles). The generation of aggregation is not easily dispersed, resulting in an electrical conversion efficiency and a decrease in the fill factor. As a control silver paste, because it does not contain the second glass particles, the front electrode of the solar cell used in the control group 1 and the control group 2 has much lower photoelectric conversion efficiency and filling factor than the battery A, the battery B, and the battery C. , battery E, battery F, battery G, battery H data. This proves that the silver paste according to the invention can improve the photoelectric conversion efficiency and the filling factor of the light source element when it is used for the front electrode of a photovoltaic element.
藉由以上較佳具體實施例之詳述，係希望能更加清楚描述本發明之特徵與精神，而並非以上述所揭露的較佳具體實施例來對本發明之面向加以限制。相反地，其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的面向內。因此，本發明所申請之專利範圍的面向應該根據上述的說明作最寬廣的解釋，以致使其涵蓋所有可能的改變以及具相等性的安排。 The features and spirit of the present invention are intended to be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents that are within the scope of the invention as claimed. Therefore, the scope of the patent application of the present invention should be construed broadly in the light of the above description, so that it covers all possible changes and arrangements.
1‧‧‧光伏元件 1‧‧‧Photovoltaic components
10‧‧‧半導體結構組合 10‧‧‧Semiconductor structure combination
101‧‧‧結晶矽基材 101‧‧‧ Crystalline substrate
102‧‧‧正表面 102‧‧‧ front surface
104‧‧‧背表面 104‧‧‧Back surface
106‧‧‧p-n接面 106‧‧‧p-n junction
108‧‧‧鈍化層 108‧‧‧ Passivation layer
12‧‧‧正面電極 12‧‧‧Front electrode
122‧‧‧網柵電極 122‧‧‧ grid electrode
122’‧‧‧第一導電條 122’‧‧‧First Conductive Strip
124‧‧‧正面匯流排電極 124‧‧‧ Positive bus bar electrode
124’‧‧‧第二導電條 124’‧‧‧Second conductive strip
14‧‧‧背面電極 14‧‧‧Back electrode
14'‧‧‧導電層 14 ' ‧‧‧ Conductive layer
16a、16b‧‧‧背面匯流排電極 16a, 16b‧‧‧ backside bus electrodes
16a'、16b'‧‧‧第三導電條 16a ' , 16b ' ‧ ‧ third conductive strip
18‧‧‧抗反射層 18‧‧‧Anti-reflective layer
圖1係根據本發明之方法所製造之光伏元件的頂視圖。 Figure 1 is a top plan view of a photovoltaic element fabricated in accordance with the method of the present invention.
圖2係根據本發明之方法所製造之光伏元件的底視圖。 2 is a bottom view of a photovoltaic element fabricated in accordance with the method of the present invention.
圖3A至圖3D係示意地繪示根據本發明之一較佳具體實施例之製造如圖1沿A-A線的剖面視圖所示之光伏元件的方法。 3A-3D are schematic views of a method of fabricating a photovoltaic element as shown in cross-sectional view along line A-A of FIG. 1 in accordance with a preferred embodiment of the present invention.
圖4係表1中太陽能電池之光電轉換效率隨著第二玻璃顆粒佔所有玻璃顆粒的重量百分比增加之變化。 Figure 4 is a graph showing the change in the photoelectric conversion efficiency of the solar cell in Table 1 as the weight percentage of the second glass particles to the total weight of all the glass particles.
圖5係表1中太陽能電池之填充因子隨著第二玻璃顆粒佔所有玻璃顆粒的重量百分比增加之變化。 Figure 5 is a graph showing the change in the fill factor of the solar cell in Table 1 as the second glass particles accounted for the weight percent of all glass particles.
1‧‧‧光伏元件 1‧‧‧Photovoltaic components
10‧‧‧半導體結構組合 10‧‧‧Semiconductor structure combination
101‧‧‧結晶矽基材 101‧‧‧ Crystalline substrate
102‧‧‧正表面 102‧‧‧ front surface
104‧‧‧背表面 104‧‧‧Back surface
106‧‧‧p-n接面 106‧‧‧p-n junction
108‧‧‧鈍化層 108‧‧‧ Passivation layer
12‧‧‧正面電極 12‧‧‧Front electrode
122‧‧‧網柵電極 122‧‧‧ grid electrode
124‧‧‧正面匯流排電極 124‧‧‧ Positive bus bar electrode
14‧‧‧背面電極 14‧‧‧Back electrode
16a、16b‧‧‧背面匯流排電極 16a, 16b‧‧‧ backside bus electrodes
18‧‧‧抗反射層 18‧‧‧Anti-reflective layer
Claims (9)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101133412A TWI518709B (en) | 2012-09-13 | 2012-09-13 | Silver paste including fined glass particles and use thereof in production of photovoltaic device |
| CN201210418311.0A CN103680676A (en) | 2012-09-13 | 2012-10-26 | Silver paste comprising refined glass particles and use thereof for manufacturing photovoltaic modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101133412A TWI518709B (en) | 2012-09-13 | 2012-09-13 | Silver paste including fined glass particles and use thereof in production of photovoltaic device |
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| Publication Number | Publication Date |
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| TW201411657A true TW201411657A (en) | 2014-03-16 |
| TWI518709B TWI518709B (en) | 2016-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW101133412A TWI518709B (en) | 2012-09-13 | 2012-09-13 | Silver paste including fined glass particles and use thereof in production of photovoltaic device |
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| CN (1) | CN103680676A (en) |
| TW (1) | TWI518709B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10134925B2 (en) | 2016-04-13 | 2018-11-20 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
| JP2009146578A (en) * | 2007-12-11 | 2009-07-02 | Noritake Co Ltd | Solar cell and aluminum paste for solar cell |
| KR20110003360A (en) * | 2008-04-09 | 2011-01-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| CN101615637B (en) * | 2009-07-08 | 2010-09-15 | 西安交通大学苏州研究院 | Sizing agent for forming electrode of solar cell and preparation method thereof |
| KR101374359B1 (en) * | 2010-09-15 | 2014-03-18 | 제일모직주식회사 | Paste for forming electrode of solar cell and solar cell using the same |
| CN102436865B (en) * | 2011-11-29 | 2013-02-27 | 湖南红太阳光电科技有限公司 | High-photo-electricity environment-friendly type crystalline silicon solar battery aluminum paste |
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2012
- 2012-09-13 TW TW101133412A patent/TWI518709B/en not_active IP Right Cessation
- 2012-10-26 CN CN201210418311.0A patent/CN103680676A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10134925B2 (en) | 2016-04-13 | 2018-11-20 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
| US10861985B2 (en) | 2016-04-13 | 2020-12-08 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI518709B (en) | 2016-01-21 |
| CN103680676A (en) | 2014-03-26 |
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