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TW201321427A - New poly(heteroarylene vinylene)s based on diketopyrrolopyrrole - Google Patents

New poly(heteroarylene vinylene)s based on diketopyrrolopyrrole Download PDF

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TW201321427A
TW201321427A TW101129719A TW101129719A TW201321427A TW 201321427 A TW201321427 A TW 201321427A TW 101129719 A TW101129719 A TW 101129719A TW 101129719 A TW101129719 A TW 101129719A TW 201321427 A TW201321427 A TW 201321427A
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group
polymer
independently selected
diketopyrrolopyrrole
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Samson Jenekhe
Pei-Tzu Wu
Felix Sunjoo Kim
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Univ Washington
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Abstract

The inventions disclosed, described, and/or claimed herein relate to various genera and subgenera of diketopyrrolopyrrole (DPP) polymers, including homopolymers and/or copolymers, comprising a plurality of repeating units, more than 50 mol. % and up to 100 mol. % of the repeating units are repeating units RU of one or more structural formula(e) complying with general structural formula (I) (see application) wherein (a) each R1 and R1' is independently selected from normal, branched, or cyclic organic group, such as for example alkyls or fluorinated derivatives thereof; (b) each hAr1 and hAr1' is independently selected from heteroaryls. The polymers are readily soluble and particularly useful for solution manufacturing organic electronic devices, including transistors and solar cells. Methods for making the polymers and the derivative electronic devices are also described.

Description

基於二酮吡咯並吡咯之新型聚(雜亞芳基亞乙烯基) Novel poly(heteroarylenevinylene) based on diketopyrrolopyrrole 相關申請 Related application

本申請要求於2011年8月19日提交的美國臨時申請序號61/525,618的優先權,該申請藉由引用以其全文結合在此。 The present application claims priority to U.S. Provisional Application Serial No. 61/525, the entire disclosure of which is incorporated herein in

政府許可權利聲明 Government licensing rights statement

諸位發明人從國家科學基金會(DMR-0805259)得到了部分資金支持。聯邦政府在本發明中保留某些許可權。 The inventors received partial financial support from the National Science Foundation (DMR-0805259). The federal government reserves certain licenses in the invention.

在此揭露的、說明的、和/或提出申請專利範圍的不同的發明涉及半導電有機聚合物及其用途的領域,包括有機電子裝置如電晶體和太陽能電池的製造。 The different inventions disclosed, illustrated, and/or claimed herein relate to the field of semiconducting organic polymers and their uses, including the fabrication of organic electronic devices such as transistors and solar cells.

可溶液加工的共軛的聚合物和/或共聚物半導體已經在本領域吸引了注意,這係由於它們在製造大面積、柔性並且低成本的電子裝置(包括有機發光二極體(OLED)、太陽能電池和/或電晶體)中的潛在應用。 Solution processable conjugated polymer and/or copolymer semiconductors have attracted attention in the art due to their ability to fabricate large area, flexible and low cost electronic devices, including organic light emitting diodes (OLEDs), Potential applications in solar cells and/or transistors.

在習知技術中已知的一些這類聚合物和/或共聚物已經實現了合理的載流能力,該等合理載流能力的形式為:相當良好的電洞遷移率、相當良好的電子遷移率,或在少數情況下,電洞遷移率和高電子遷移率兩者的組合(即“ 雙極”特性)。一些習知技術的聚合物和/或共聚物當被用於製造電晶體時可以用來產生相當良好的性能,或者在太陽能電池中可以用來產生用於將太陽輻射轉換成電能的激勵效率(3%-5%)。該相對較少已知的雙極性聚合物和/或共聚物還沒有實現相當良好並且相匹配的電洞遷移率和電子遷移率水平,即:這種水平將允許製造包含單一共聚物的高效率太陽能電池、或電晶體以及衍生裝置,其中該等裝置具有足夠高的開關電流比以便能夠用於實用性的以及競爭性的終端用途。 Some of these polymers and/or copolymers known in the prior art have achieved reasonable current carrying capacity in the form of relatively good hole mobility, relatively good electron transport. Rate, or in a few cases, a combination of both hole mobility and high electron mobility (ie " Bipolar "characteristics". Some of the prior art polymers and/or copolymers can be used to produce fairly good properties when used in the manufacture of transistors, or can be used in solar cells to produce solar radiation conversion. The excitation efficiency of electrical energy (3%-5%). The relatively few known bipolar polymers and/or copolymers have not achieved quite good and matched hole mobility and electron mobility levels, namely: This level will allow the fabrication of high efficiency solar cells, or transistors, and derivatization devices comprising a single copolymer, wherein such devices have a sufficiently high switching current ratio for use in practical and competitive end uses.

共軛的供體-受體(D-A)聚合物和/或共聚物已經在本領域受到了注意用於以下目的:定制電子結構、最高佔據分子軌道(HOMO)以及最低未佔據分子軌道(LUMO)、相關的帶隙能以及在UV、可見光和紅外波長的較寬區域內的強光子吸收。在該等共軛聚合物和/或共聚物中的電子供體和受體亞基的選擇可以調節HOMO/LUMO能級,從而調節光吸收以及電荷輸送特性。 Conjugated donor-acceptor (DA) polymers and/or copolymers have received attention in the art for the following purposes: custom electronic structures, highest occupied molecular orbital (HOMO), and lowest unoccupied molecular orbital (LUMO) , associated bandgap energy, and strong photon absorption in a wide range of UV, visible, and infrared wavelengths. The choice of electron donor and acceptor subunits in the conjugated polymers and/or copolymers can modulate the HOMO/LUMO energy levels to adjust light absorption and charge transport characteristics.

這類聚合物中已知的一類包括1,4-二酮-2,5-二氫吡咯並[3,4-c]吡咯(“DPP”)電子接受亞基,該等電子接受亞基具有以下結構: A class known in the class of polymers includes 1,4-diketo-2,5-dihydropyrrolo[3,4- c ]pyrrole ("DPP") electron accepting subunits having such electron accepting subunits The following structure:

例如,PCT專利申請WO 2008/000664考慮了一大類的這樣的DPP聚合物作為有機半導體,該等有機半導體 潛在地適用於製造電晶體以及太陽能電池(所建議的類屬結構在下面示出)。 For example, PCT patent application WO 2008/000664 considers a large class of such DPP polymers as organic semiconductors, such organic semiconductors It is potentially suitable for the manufacture of transistors and solar cells (the proposed generic structure is shown below).

‘664 PCT廣泛地考慮了不同Ar亞基的非常多種多樣的潛在組合的可能用途,該等不同Ar亞基包括多種多樣的芳基、雜芳基、稠合雜芳基、乙烯(ethylene)、乙炔(acetylene)以及在此說明的其他潛在的Ar亞基。更具體地,‘664 PCT報導了一種DPP聚合物的實際的合成,該聚合物具有以下結構: '664 PCT has broadly considered the possible uses of a very wide variety of potential combinations of different Ar subunits, including a wide variety of aryl, heteroaryl, fused heteroaryl, ethylene, Acetylene and other potential Ar subunits described herein. More specifically, '664 PCT reported an actual synthesis of a DPP polymer having the following structure:

由這種DPP聚合物(4)製造的薄膜、底柵極場效應電晶體據報導產生“明顯的p型電晶體行為(clear p-type transistor behavior)”,而具有0.15 cm2/Vs的場效應遷移率、約0至5 V的閾值電壓偏置、以及介於104-107之間的開關比、以及高達0.1 cm2/Vs的雙極遷移率,並且該等電晶體據報導是熱穩定的並且在空氣中經兩個月性能相當穩定。沒有提及任何n-型載流能力。由該聚合 物構造的本體異質結型太陽能電池據報導以高達3.06%的效率來轉換太陽能。 The thin film, bottom gate field effect transistor fabricated from this DPP polymer (4) is reported to produce "clear p-type transistor behavior" with a field of 0.15 cm 2 /Vs Effect mobility, threshold voltage bias of about 0 to 5 V, and switching ratio between 10 4 and 10 7 , and bipolar mobility of up to 0.1 cm 2 /Vs, and the transistors are reported to be It is thermally stable and fairly stable in air for two months. There is no mention of any n-type current carrying capacity. The bulk heterojunction solar cell constructed from the polymer is reported to convert solar energy with an efficiency of up to 3.06%.

近來,Bijleveld等人(美國化學會志(J.Amer.Chem.Soc.)2009,131,16616-16617)已經報導了一種稍微不同的聚合物,它具有以下所示的結構: Recently, Bijleveld et al. (J. Amer. Chem. Soc. 2009, 131, 16616-16617) have reported a slightly different polymer having the structure shown below:

一種Mn=10,000 g/mol型式的PDPP3T聚合物(其中HD=2-己基癸基)產生一種底柵極、底接觸電晶體,該電晶體具有雙極行為、0.04 cm2/Vs的電洞遷移率以及0.01 cm2/Vs的電子遷移率。該聚合物被用來製造逆變器以及製造本體異質結型太陽能電池(與PCBM組合),該太陽能電池產生效率高達4.7%的光轉換。不久以後,WO 2010/049321報導了與Bijleveld所報導的具有相同結構式但是分子量為39,500 gr/mole的一種DPP聚合物,該聚合物產生一種底柵極、底接觸電晶體,它具有平衡的雙極特性、0.43 cm2/Vs的電洞遷移率以及0.35 cm2/Vs的電子遷移率。並不清楚為什麼在‘664 PCT聚合物、Bijleveld聚合物以及WO 2010/049321聚合物之間這樣一小的結構變化會在電性能上產生如此大的不同。 One kind of M n = 10,000 g / mol PDPP3T type polymer (where HD = 2- hexyldecyl) to produce a bottom-gate, bottom-contact transistor, the transistor having a bipolar behavior, 0.04 cm 2 / Vs in the hole Mobility and electron mobility of 0.01 cm 2 /Vs. The polymer was used to fabricate inverters and to fabricate bulk heterojunction solar cells (in combination with PCBM) that produced light conversion with an efficiency of up to 4.7%. Soon after, WO 2010/049321 reported a DPP polymer of the same structural formula but with a molecular weight of 39,500 gr/mole as reported by Bijleveld, which produces a bottom-gate, bottom-contact transistor with balanced double Polar characteristics, hole mobility of 0.43 cm 2 /Vs, and electron mobility of 0.35 cm 2 /Vs. It is not clear why such a small structural change between the '664 PCT polymer, the Bijleveld polymer and the WO 2010/049321 polymer produces such a large difference in electrical properties.

最近,Bronstein等人報導了(美國化學會志(J.Am.Chem.Soc.)2011,133,3272-3275)兩種相關的DPP聚合物,並且將它們用在了產生高達1.95 cm2/Vs的最大電 洞遷移率的有機場效應電晶體(OFFTs)中,以及具有5.4%的能量轉換效率的有機光電裝置中。 Recently, Bronstein et al. reported (J.Am.Chem.Soc. 2011, 133, 3272-3275) two related DPP polymers and used them to produce up to 1.95 cm 2 / The maximum hole mobility of Vs is in organic field-effect transistors (OFFTs), and in organic photovoltaic devices with 5.4% energy conversion efficiency.

然而,也是近來,Zhang等人(合成材料(Synthetic Metals),2010,160,1945-1952)報導了三種其他類似的DPP聚合物,該等聚合物在聚合物鏈中包含亞乙烯基亞基,並且具有以下結構: However, also recently, Zhang et al. ( Synthetic Metals , 2010, 160, 1945-1952) reported three other similar DPP polymers containing vinylidene subunits in the polymer chain. And has the following structure:

包含該等DPP/亞乙烯基聚合物的太陽能電池產生了只有0.72%、0.16%以及0.16%的OPV效率。C6DPPDHPV在一OFET中具有所報導的最高的電洞遷移率,只有5.4×10-4 cm2/Vs,而未報導電子遷移率或雙極行為。與其他的DPP聚合物相比,造成該等在特性和性能上相當大差異的原因還不清楚,但是鑒於由Zhang等人報導的結果 ,本領域的普通技術人員可以受到啟發而不考慮在類似的聚合物中包含亞乙烯基亞基。 Solar cells containing these DPP/vinylidene polymers produced OPV efficiencies of only 0.72%, 0.16%, and 0.16%. C6DPPDHPV has the highest reported hole mobility in an OFET, only 5.4 × 10 -4 cm 2 /Vs, and no conductivity mobility or bipolar behavior is reported. The reason for these considerable differences in characteristics and performance compared to other DPP polymers is not clear, but given the results reported by Zhang et al., one of ordinary skill in the art can be inspired without considering The polymer contains a vinylidene subunit.

但是,本領域對於新的且改良的聚合物和/或共聚物材料和/或由其衍生的組合物仍存在需要,該等材料和/或組合物能夠提供與改進的可加工性相結合的高的且可再生的電洞或電子遷移率、能夠達到高溶解度、控制分子量和/或成膜能力、低成本以及高的熱和氧化穩定性,從而用於有機電子裝置,尤其是電晶體、太陽能電池或更加複雜的有機電子裝置和/或電路之中。特別地,本領域對於具有改進的電洞和電子遷移率水平、更低偏置電壓以及更好開/關電流比的雙極性有機聚合物和/或共聚物仍然存在未滿足的需要,以便能夠從一種單一半導體聚合物來製造互補電路和電子裝置。以下所說明的不同發明的不同實施方式正係為了解決該等問題。 However, there remains a need in the art for new and improved polymer and/or copolymer materials and/or compositions derived therefrom that are capable of providing improved processability in combination with improved processability. High and reproducible holes or electron mobility, high solubility, controlled molecular weight and/or film forming ability, low cost, and high thermal and oxidative stability for use in organic electronic devices, especially transistors, Among solar cells or more complex organic electronics and/or circuits. In particular, there remains an unmet need in the art for bipolar organic polymers and/or copolymers having improved cell and electron mobility levels, lower bias voltages, and better on/off current ratios in order to be able to Complementary circuits and electronic devices are fabricated from a single semiconductor polymer. Different embodiments of the different inventions described below are intended to address these problems.

在此揭露的、說明的和/或提出申請專利範圍的不同的發明涉及二酮基吡咯並吡咯(DPP)聚合物(包括均聚物和/或共聚物)的不同的屬和亞屬,該等聚合物包含多個重複單元,大於50莫耳%並且高達100莫耳%的該等重複單元係具有符合結構通式(I)的一或多個結構式的重複單元RU, The different inventions disclosed, described and/or claimed herein relate to different genus and subgenus of diketopyrrolopyrrole (DPP) polymers, including homopolymers and/or copolymers, which The polymer comprises a plurality of repeating units, and more than 50 mol% and up to 100 mol% of the repeating units have repeating units RU conforming to one or more structural formulas of the structural formula (I),

其中a)每個R1和R1’獨立地選自正鏈的、支鏈的或環狀的有機基團,例如烷基或它們的氟化的衍生物;b)每個hAr1和hAr1’獨立地選自雜芳基。這類雜芳基的實例包括以下結構: Wherein a) each R 1 and R 1 ' is independently selected from a normal chain, a branched or cyclic organic group, such as an alkyl group or a fluorinated derivative thereof; b) each hAr 1 and hAr 1' is independently selected from heteroaryl. Examples of such heteroaryl groups include the following structures:

其中i)a係等於1、2、3或4的整數;ii)每個X、X’、X”或X”’獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一正鏈的、支鏈的或環狀的有機基團,例如烷基;iii)每個Y、Y’、Y”以及Y”’獨立地選自N以及CR4 ,其中R4係氫、鹵素、氰基或一正鏈的、支鏈的或環狀的有機基團,例如烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;並且c)每個R2和R2’獨立地選自氫、氰基或有機基團,例如烷基、氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基。 Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X"' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 , and NR 3 wherein R 3 is a normal chain, branched or cyclic organic group such as an alkyl group; iii) each Y, Y', Y" and Y"' are independently selected from N and CR 4 , Wherein R 4 is hydrogen, halogen, cyano or a normal chain, branched or cyclic organic group such as alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy And c) each R 2 and R 2 ' are independently selected from hydrogen, cyano or an organic group such as alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl, carboxyalkyl or acetamidine Oxygen.

在一些實施方式中,以上定義的該等DPP聚合物可以是均聚物。在其他的實施方式中,DPP聚合物可以是不同類型的共聚物,該等共聚物包含具有以上所示結構通式(I)的重複單元RU以及在下面進一步說明的其他類型的重複單元。 In some embodiments, the DPP polymers defined above may be homopolymers. In other embodiments, the DPP polymer can be a different type of copolymer comprising repeating units RU having the structural formula (I) shown above and other types of repeating units as further described below.

在DPP聚合物的一些實施方式中,該等聚合物係共聚物,它們的重複單元RU係一混合,該混合包括或由以下各項組成:具有特定結構式(II)的重複單元RU1 In some embodiments of the DPP polymer, the polymer-based copolymers, the repeating units RU thereof, are mixed, the blend comprising or consisting of: repeating unit RU1 having the specific structural formula (II)

以及具有特定結構式(III)的重複單元RU2, And a repeating unit RU2 having a specific structural formula (III),

其中,每個R11、R11’、R21以及R21’獨立地選自正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物; a)每個hAr11、hAr11’、hAr21以及hAr21’獨立地選自C1-C60雜芳基。 Wherein each of R 11 , R 11 ' , R 21 and R 21 ' is independently selected from a normal chain, a branched or cyclic alkyl group or a fluorinated derivative thereof; a) each hAr 11 , hAr 11' , hAr 21 and hAr 21' are independently selected from C 1 -C 60 heteroaryl.

在一些實施方式中,該等DPP共聚物係嵌段共聚物,其中R12和R22係彼此不相同的,和/或R12’和R22’係彼此不相同的。 In some embodiments, the DPP copolymer is a block copolymer wherein R 12 and R 22 are different from each other, and/or R 12 ' and R 22 ' are different from each other.

與包含化學式(II)和化學式(III)重複單元的一混合的該等DPP聚合物結合使用的較佳的hAr雜芳基的實例包括以下結構: Examples of preferred hAr heteroaryl groups for use in combination with such DPP polymers comprising a mixture of repeating units of formula (II) and formula (III) include the following structures:

其中i)a係等於1、2、3或4的整數;ii)每個X、X’、X”或X”’獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一C1-C30正鏈的、支鏈的或環狀的烷基;iii)每個Y、Y’、Y”以及Y”’獨立地選自N以及CR4,其中R4係氫、鹵素、氰基或一C1-C30正鏈的、支鏈的 或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;b)每個R12、R12’、R22以及R22’獨立地選自氫、氰基或C1-C30烷基、氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基,c)其條件係包含在化學式(II)中的基團R11、R11’、hAr11以及hAr11’中的至少一個不同於包含在化學式(III)中的它的同系物,分別是R21、R21’、hAr21以及hAr21’Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X"' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 , and NR 3 wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; iii) each Y, Y', Y" and Y"' are independently selected from N and CR 4 , Wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy group ; b) each R 12 , R 12 ' , R 22 and R 22 ' are independently selected from hydrogen, cyano or C 1 -C 30 alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl, Carboxyalkyl or ethoxylated, c) the conditions comprising at least one of the groups R 11 , R 11 ' , hAr 11 and hAr 11 ' in the formula (II) are different from those contained in the formula (III) Its homologues are R 21 , R 21 ' , hAr 21 and hAr 21 ', respectively .

在其他實施方式中,該等DPP共聚物係無規共聚物,其中R12和R22係彼此完全相同的並且R12’和R22’係彼此完全相同的。 In other embodiments, the DPP copolymers are random copolymers wherein R 12 and R 22 are identical to each other and R 12 ' and R 22 ' are identical to each other.

包含化學式(I)的重複單元、還有具有化學式(II)和(III)的其他重複單元的該等DPP聚合物以及它們的不同亞屬或亞種,對於製造電子裝置如電晶體和太陽能電池以及邏輯電路(如逆變器以及反及(NAND)或者反或(NOR)電路)係有用的,並且可以具有一種出人意料優越的以電洞、電子或兩者(即“雙極”特徵)的形式傳導電流的能力。該等DPP聚合物的hAr以及亞乙烯基聚合物亞基的具體組合與該等出人意料優越的特性和效用相關。 The DPP polymers comprising the repeating units of formula (I), as well as other repeating units of formula (II) and (III), and their different subgenera or subspecies, for the manufacture of electronic devices such as transistors and solar cells And logic circuits such as inverters and reverse (NAND) or inverse (NOR) circuits are useful and can have an unexpectedly superior hole, electron or both (ie "bipolar" characteristics). The ability of the form to conduct current. The specific combinations of hAr and vinylidene polymer subunits of such DPP polymers are associated with such unexpectedly superior properties and utilities.

以上廣泛地概括地說的該等不同的發明的不同的和/或較佳的實施方式的進一步的詳細說明將在以下所提供的詳細說明部分中在以下提供。 Further detailed description of the various and/or preferred embodiments of the various inventions, which are broadly described above, are provided below in the Detailed Description section provided below.

發明詳細說明 Detailed description of the invention

在此揭露的、說明的和/或提出申請專利範圍的不同的發明涉及二酮基吡咯並吡咯(DPP)聚合物的不同的屬和亞屬,它們對於製造電子裝置如電晶體和太陽能電池以及邏輯電路(如逆變器以及反及或反或電路)係有用的,並且具有一種出人意料優越的以電洞或電子、或在一些情況下以電洞和電子兩者(即“雙極”特徵)的形式傳導電流的能力。人們認為,在該等聚合物中發現的DPP、hAr以及亞乙烯基聚合物亞基的具體的組合涉及並且提供了出人意料優越的特性、加工特徵和/或效用。 The different inventions disclosed, and/or claimed herein relate to different genus and subgenus of diketopyrrolopyrrole (DPP) polymers for the manufacture of electronic devices such as transistors and solar cells, and Logic circuits, such as inverters and anti- or anti-or circuits, are useful and have an unexpectedly superior ability to use holes or electrons or, in some cases, both holes and electrons (ie, "bipolar" features. The ability to conduct current in the form of . It is believed that the specific combination of DPP, hAr, and vinylidene polymer subunits found in such polymers involves and provides unexpectedly superior properties, processing characteristics, and/or utility.

也有可能的是“調諧”該等聚合物亞基以及它們的取代基的身份(identity),以便產生在固態中的電特性和物理特性來促進在固態中的分子間π-π堆積和/或長程有序,這可以導致電流載體(如電洞、電子或兩者)的高遷移率。 It is also possible to "tune" the identity of the polymeric subunits and their substituents in order to produce electrical and physical properties in the solid state to promote intermolecular π-π stacking in the solid state and/or Long-range order, which can result in high mobility of current carriers such as holes, electrons or both.

化學式I的DPP聚合物及其亞屬 DPP polymer of formula I and its subgenus

本發明的二酮基吡咯並吡咯(DPP)聚合物以及其不同的實施方式和亞屬包括均聚物和/或共聚物,該等均聚物和/或共聚物包含多個重複單元,其中大於50莫耳%並且高達100莫耳%的重複單元係具有符合結構通式(I)的一或多個結構式的重複單元RU, The diketopyrrolopyrrole (DPP) polymers of the present invention, and various embodiments and subgenera thereof, include homopolymers and/or copolymers comprising a plurality of repeating units, wherein More than 50% by mole and up to 100% by mole of repeating units having repeating units RU conforming to one or more structural formulas of structural formula (I),

其中a)每個R1和R1’獨立地選自C1-C30正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物;b)每個hAr1和hAr1’獨立地選自C1-C60雜芳基,該等雜芳基具有以下結構: Wherein a) each R 1 and R 1 ' is independently selected from a C 1 -C 30 positive-chain, branched or cyclic alkyl group or a fluorinated derivative thereof; b) each hAr 1 and hAr 1' is independently selected from C 1 -C 60 heteroaryl groups, which have the following structure:

其中i)a係等於1、2、3或4的整數;ii)每個X、X’、X”或X”’獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一C1-C30正鏈的、支鏈的或環狀的烷基;iii)每個Y、Y’、Y”以及Y”’獨立地選自N以及CR4 ,其中R4係氫、鹵素、氰基或一C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;並且c)每個R2和R2’獨立地選自氫、氰基或C1-C30烷基、氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基。 Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X"' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 , and NR 3 wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; iii) each Y, Y', Y" and Y"' are independently selected from N and CR 4 , Wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy group And c) each R 2 and R 2 ' are independently selected from hydrogen, cyano or C 1 -C 30 alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl, carboxyalkyl or acetamidine Oxygen.

DPP聚合物的重複單元的數量可以由整數n來說明,該整數可以是5或更大的任何正整數,但是也可以來自5至10,000或來自10至1,000。然而,應該指出的是在在此說明的DPP聚合物的大多數實施方式中,多個重複單元,即大於50莫耳%或大於60%、70%、80%、90%、95%、98%或99%或高達和/或包括100莫耳%的重複單元,是具有符合以上說明的結構通式(I)的一或多個結構式的重複單元RU。 The number of repeating units of the DPP polymer can be illustrated by the integer n, which can be any positive integer of 5 or greater, but can also be from 5 to 10,000 or from 10 to 1,000. However, it should be noted that in most embodiments of the DPP polymers described herein, a plurality of repeating units, ie, greater than 50% by mole or greater than 60%, 70%, 80%, 90%, 95%, 98 The repeating unit of % or 99% or up to and/or comprising 100 mol% is a repeating unit RU having one or more structural formulas of the structural formula (I) in accordance with the above description.

在DPP聚合物的一些實施方式中,大於50莫耳%、高達100莫耳%(較佳的是,介於90莫耳%與99莫耳%之間)的重複單元係具有符合結構通式(I)的一個並且唯一一個特定結構式的重複單元RU。 In some embodiments of the DPP polymer, greater than 50 mole %, up to 100 mole % (preferably between 90 mole % and 99 mole %) of the repeat unit has a conformational formula One and only one repeating unit RU of a specific structural formula of (I).

在DPP聚合物的一些實施方式中,大於50莫耳%、高達小於100莫耳%的重複單元係具有符合結構通式(I)的一個並且唯一一個特定結構式的重複單元RU,並且介於0莫耳%與50莫耳%之間(較佳的是,介於1莫耳%與10莫耳%之間)的重複單元係具有不符合結構通式(I)的一或多個特定結構式的重複單元RU*。 In some embodiments of the DPP polymer, greater than 50 mole %, up to less than 100 mole % of the repeat unit has a repeat unit RU conforming to one of the structural formula (I) and unique to a particular structural formula, and A repeating unit between 0 mole % and 50 mole % (preferably between 1 mole % and 10 mole %) has one or more specificities that do not conform to structural formula (I) The structural repeat unit RU*.

在一些實施方式中該等DPP聚合物係均聚物。在此使用的“均聚物”表示該聚合物所有的重複單元係重複單元RU,並且該等重複單元RU具有符合結構通式(I)的一個並且唯一一個結構式。 In some embodiments the DPP polymers are homopolymers. As used herein, "homopolymer" means all repeating unit repeating units RU of the polymer, and the repeating units RU have one and only one structural formula consistent with structural formula (I).

然而,如將在下面詳述的,也有可能的是製備具有兩種或更多種類型的“R1”取代基和/或兩種或更多種類型的“hAr”亞基的混合物的共聚物。因此,在一些實施方式中,本發明涉及二酮基吡咯並吡咯聚合物,其中大於50莫耳%(較佳的是,大於90莫耳%)、高達100莫耳%的重複單元係具有符合結構通式(I)的至少兩種不同的特定結構式的重複單元RU。 However, as will be detailed below, it is also possible to prepare copolymers of mixtures having two or more types of "R 1 " substituents and/or two or more types of "hAr" subunits. Things. Accordingly, in some embodiments, the present invention is directed to a diketopyrrolopyrrole polymer wherein greater than 50 mole percent (preferably greater than 90 mole percent), up to 100 mole percent of repeat units have Repeating units RU of at least two different specific structural formulas of the formula (I).

例如,可能的是製備包含大於一種類型的多亞基子結構的共聚物,例如二酮基吡咯並吡咯共聚物,其中重複單元RU係一種混合,該混合由以下各項組成:具有特定結構式(II)的重複單元RU1 For example, it is possible to prepare a copolymer comprising more than one type of multi-subunit substructure, such as a diketopyrrolopyrrole copolymer, wherein the repeating unit RU is a mixture consisting of having a specific structural formula ( II) repeat unit RU1

以及具有特定結構式(III)的重複單元RU2, And a repeating unit RU2 having a specific structural formula (III),

其中,每個R11、R11’、R21以及R21’獨立地選自C1- C30正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物;a)每個hAr11、hAr11’、hAr21以及hAr21’獨立地選自C1-C60雜芳基,該等雜芳基具有以下結構: Wherein each of R 11 , R 11 ' , R 21 and R 21 ' is independently selected from a C 1 - C 30 positive-chain, branched or cyclic alkyl group or a fluorinated derivative thereof; a) Each of hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' is independently selected from a C 1 -C 60 heteroaryl group having the following structure:

其中i)a係等於1、2、3或4的整數;ii)每個X、X’、X”或X”’獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一C1-C30正鏈的、支鏈的或環狀的烷基;iii)每個Y、Y’、Y”以及Y”’獨立地選自N以及CR4,其中R4係氫、鹵素、氰基或一C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;b)每個R12、R12’、R22以及R22’獨立地選自氫、氰基或C1-C30烷基、氟烷基、烷氧基、芳基、雜芳基、羧 烷基或乙醯氧基,其條件係包含在化學式(II)中的基團R11、R11’、hAr11以及hAr11’的至少一個不同於包含在化學式(III)中的它的同系物,分別為R21、R21’、hAr21以及hAr21’Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X"' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 , and NR 3 wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; iii) each Y, Y', Y" and Y"' are independently selected from N and CR 4 , Wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy group ; b) each R 12 , R 12 ' , R 22 and R 22 ' are independently selected from hydrogen, cyano or C 1 -C 30 alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl, a carboxyalkyl group or an ethoxylated group, the conditions of which are at least one of the groups R 11 , R 11 ' , hAr 11 and hAr 11 ' contained in the formula (II) different from those contained in the formula (III) Homologs are R 21 , R 21 ' , hAr 21 and hAr 21 ', respectively .

包含化學式(II)和化學式(III)的重複亞基的“混合的”共聚物的一些實施方式可以是在其中所有的重複單元係重複單元RU的共聚物,所述重複單元RU係一種混合,該混合由以下各項組成:具有特定化學式(II)的重複單元RU1以及具有特定化學式(III)的重複單元RU2。在包含化學式II和化學式(III)的重複亞基的“混合的”共聚物的一些實施方式中,大於50莫耳%、高達小於100莫耳%(較佳的是,介於90莫耳%與99莫耳%之間)的重複單元係由具有特定化學式(II)的重複單元RU1以及具有特定化學式(III)的重複單元RU2組成的重複單元RU,並且介於0莫耳%與約50莫耳%之間的重複單元係具有不符合結構通式(I)的一或多個結構式的重複單元RU*。在包含化學式(II)和化學式(III)的重複亞基的“混合的”共聚物的這類實施方式中,重複單元RU1與RU2的莫耳比(RU1:RU2)可以在從約5%至約95%(較佳的是,從約30%至約70%)的範圍內。 Some embodiments of a "mixed" copolymer comprising repeating subunits of formula (II) and formula (III) may be a copolymer in which all of the repeating unit repeats unit RU, the repeating unit RU being a mixture, The mixing consists of a repeating unit RU1 having a specific chemical formula (II) and a repeating unit RU2 having a specific chemical formula (III). In some embodiments of the "mixed" copolymer comprising repeating subunits of Formula II and Formula (III), greater than 50% by mole, up to less than 100% by mole (preferably, between 90% by mole) The repeating unit between 99% by mole and the repeating unit RU1 having the specific chemical formula (II) and the repeating unit RU2 having the specific chemical formula (III), and between 0% and about 50% The repeating unit between the mole % has a repeating unit RU* that does not conform to one or more structural formulas of the structural formula (I). In such embodiments of the "mixed" copolymer comprising repeating subunits of formula (II) and formula (III), the molar ratio (RU1:RU2) of repeating units RU1 to RU2 can range from about 5% to It is in the range of about 95% (preferably, from about 30% to about 70%).

在包含化學式(II)和化學式(III)的重複亞基的“混合的”共聚物中,應當理解,該等共聚物可以是“嵌段”或無規共聚物。 In "mixed" copolymers comprising repeating subunits of formula (II) and formula (III), it is understood that the copolymers may be "block" or random copolymers.

例如,化學式(II)的該等共聚物允許在DPP亞基上 的氮原子上引入大於一種的“R”取代基,這可以有益地修改用於某些應用的該等聚合物在固態或溶液態中的溶解度和/或物理特徵。這類“混合的”共聚物還可以允許存在多種類型的DPP或hAr基團(這在一些應用如太陽能電池中可以是有益的),在其中不同的hAr基團的引入可以被用來調諧和/或加寬該等共聚物的光學吸收帶,以便更好地吸收整個太陽能光譜並且由此提高收集太陽能的效率。 For example, the copolymers of formula (II) are allowed on the DPP subunit. The introduction of more than one "R" substituent on the nitrogen atom can beneficially modify the solubility and/or physical characteristics of the polymers in certain solid or solution states for certain applications. Such "mixed" copolymers may also allow for the presence of multiple types of DPP or hAr groups (which may be beneficial in some applications such as solar cells) where the introduction of different hAr groups can be used to tune and / / Widening the optical absorption band of the copolymers to better absorb the entire solar spectrum and thereby increase the efficiency of collecting solar energy.

該等DPP聚合物和/或共聚物包含至少一種或多種類型的1,4-二酮-2,5-二氫吡咯並[3,4-c]吡咯(“DPP”)電子接受亞基,該等電子接受亞基具有以下類屬結構: The DPP polymers and/or copolymers comprise at least one or more types of 1,4-diketo-2,5-dihydropyrrolo[3,4- c ]pyrrole ("DPP") electron accepting subunits, The electron accepting subunits have the following generic structure:

DPP亞基提供了有用的特性,因為該稠合的內醯胺基團係強吸電子的、平面的以及高共軛的,並且可以容易地與聚合物的hAr以及亞乙烯基亞基共軛,這可以導致小帶隙,該等小帶隙對於在電晶體和太陽能電池中應用的電荷傳輸特性是高度有益的;並且,DPP亞基提供在可見光到近紅外波長中寬而強的光吸收,這在太陽能電池的應用中是有益的。改變在DPP亞基(或在hAr或亞乙烯基亞基)2,5-醯胺氮位置的取代基可以用於調諧DPP聚合物和共聚物的溶解度、共平面性、氫鍵相互作用、結晶性、自組裝、共軛長度以及電子結構。 The DPP subunit provides useful properties because the fused endoamine group is strongly electron withdrawing, planar, and highly conjugated, and can be readily conjugated to the hAr and vinylidene subunits of the polymer. This can result in small band gaps which are highly beneficial for charge transport characteristics applied in transistors and solar cells; and DPP subunits provide broad and strong light absorption in the visible to near infrared wavelengths This is beneficial in solar cell applications. Substituents that change the 2,5-guanamine nitrogen position in the DPP subunit (or in the hAr or vinylidene subunit) can be used to tune the solubility, coplanarity, hydrogen bonding interaction, crystallization of DPP polymers and copolymers. Sex, self-assembly, conjugate length, and electronic structure.

在許多實施方式中,在DPP亞基2,5-位置的末端“R”基團可以獨立地選自R1、R1’、R11、R11’、R21或R21’基團,該等基團可以潛在地選自多種多樣的有機基團,包括C1-C30、C1-C20或C1-C12有機基團。較佳的是,該等R1、R1’、R11、R11’、R21或R21’選自以下的基團,即:該等基團被期望在高達約300℃或更高的溫度下是熱和空氣穩定的,並且被預期在由它們製造的電子裝置的操作條件下對於電洞的氧化作用或電子的還原作用係穩定的,如可任選地取代的烷基、全氟烷基、烷氧基、全氟烷氧基、芳基、雜芳基、烷芳基、烷雜芳基及其類似基團。在一些實施方式中,每個R1、R1’、R11、R11’、R21或R21’獨立地選自正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物。在一些較佳的實施方式中,每個R1、R1’、R11、R11’、R21或R21’基團係一正鏈的或支鏈的烷基或全氟烷基。在一些實施方式中,每個R1、R1’、R11、R11’、R21或R21’基團係相同的基團。 In many embodiments, the terminal "R" group at the 2,5-position of the DPP subunit may be independently selected from the group consisting of R 1 , R 1 ' , R 11 , R 11 ' , R 21 or R 21 ' , such groups may be selected from a wide variety of potentially an organic group, including C 1 -C 30, C 1 -C 20 or C 1 -C 12 organic group. Preferably, the R 1 , R 1 ' , R 11 , R 11 ' , R 21 or R 21 ' are selected from the group consisting of: such groups are expected to be up to about 300 ° C or higher. At temperatures that are heat and air stable, and are expected to be stable to oxidation or electron reduction of the hole under the operating conditions of the electronic device from which they are fabricated, such as optionally substituted alkyl, all Fluoroalkyl, alkoxy, perfluoroalkoxy, aryl, heteroaryl, alkaryl, alkaryl and the like. In some embodiments, each R 1 , R 1 ' , R 11 , R 11 ' , R 21 or R 21 ' is independently selected from a normal chain, a branched or cyclic alkyl group or a fluorinated group thereof Derivatives. In some preferred embodiments, each R 1 , R 1 ' , R 11 , R 11 ' , R 21 or R 21 ' group is a normal or branched alkyl or perfluoroalkyl group. In some embodiments, each R 1 , R 1 ' , R 11 , R 11 ' , R 21 or R 21 ' group is the same group.

該等DPP聚合物和/或共聚物還在共聚物主鏈上包含獨立地選擇的hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’“雜芳基”亞基,該等“雜芳基”亞基各自包含直接與DPP亞基鍵合的五元的雜芳基環。與一種可比的六元芳基或雜芳基環相比,這種安排被認為呈現了與相鄰的DPP亞基較少的不宜的空間相互作用(與相鄰α-位置上的可能的取代基有關)。不希望受理論所束縛,人們認為將較少空間要求的五元雜芳基環結合到DPP基團上增加 了hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21基團相對於鍵合到其上的DPP基團的共平面和/或π共軛的可能性,這至少是同較高的空間要求相比來說,這一較高的空間要求可以由鍵合至DPP的潛在地六元芳基或雜芳基所呈現。所改進的共平面的潛力也被認為增加了在固態中在分子鏈之間的改進的分子間π-π堆積的潛力。 The DPP polymers and/or copolymers also comprise independently selected hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' "heteroaryl" subunits on the copolymer backbone. The "heteroaryl" subunits each comprise a five membered heteroaryl ring bonded directly to the DPP subunit. Compared to a comparable six-membered aryl or heteroaryl ring, this arrangement is believed to exhibit less undesirable spatial interactions with adjacent DPP subunits (with possible substitutions at adjacent α-positions) Related to). Without wishing to be bound by theory, it is believed that the incorporation of a less space-required five-membered heteroaryl ring to the DPP group adds hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 , and hAr 21 groups. This higher space requirement can be bonded to by at least the higher space requirements compared to the possibility of coplanar and/or π conjugates of DPP groups bonded thereto. Potentially a six-membered aryl or heteroaryl group of DPP is present. The improved coplanar potential is also believed to increase the potential for improved intermolecular π-π stacking between molecular chains in the solid state.

該等hAr雜芳基亞基和/或環包含至少一個碳原子以及選自O、N、S、Se以及Si的至少一個雜原子,以作為一個π-共軛的芳香環或環系的一部分。該等hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’“雜芳基”亞基還可以包含一或多個另外的可任選地取代的芳基或雜芳基,該等可任選地取代的芳基或雜芳基被鍵合或被稠合到該五元雜芳基環上,該五元雜芳基環直接被鍵合到該二酮基吡咯並吡咯亞基上,以便形成多環的或稠環的hAr亞基,如下文所進一步討論。在許多實施方式中,該等hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’“雜芳基”亞基,包括任何可任選的取代基,是C1-C60、C1-C30、C1-C20或C1-C12亞基。 The hAr heteroaryl subunits and/or rings comprise at least one carbon atom and at least one hetero atom selected from the group consisting of O, N, S, Se, and Si as part of a π-conjugated aromatic ring or ring system . The hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' "heteroaryl" subunits may further comprise one or more additional optionally substituted aryl or heteroaryl groups. The optionally substituted aryl or heteroaryl group is bonded or fused to the five-membered heteroaryl ring, which is directly bonded to the diketopyrrole The pyrroleylene group is formed to form a polycyclic or fused ring hAr subunit, as discussed further below. In many embodiments, the hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' "heteroaryl" subunits, including any optional substituent, are C 1 -C 60 , C 1 -C 30 , C 1 -C 20 or C 1 -C 12 subunit.

儘管如此,該等hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’“雜芳基”亞基可以可任選地包含一種或多種外周取代基,例如氰基、烷基、烷氧基、硫代烷基或硫代烷氧基取代基,以便提供改變所得共聚物的電子特徵和/或溶解度的潛力。較佳的是,用於hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’“雜芳基”亞基的任何這類可任 選的取代基不被鍵合至五元雜芳基環上(該雜芳基環直接被鍵合至DPP基團),以便將與該DPP基團的可能的空間相互作用降至最低。 Nonetheless, the hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' "heteroaryl" subunits may optionally comprise one or more peripheral substituents, such as cyano, alkanes. A base, alkoxy, thioalkyl or thioalkoxy substituent to provide the potential to alter the electronic character and/or solubility of the resulting copolymer. Preferably, any such optional substituents for hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' "heteroaryl" subunits are not bonded to five The heteroheteroaryl ring (the heteroaryl ring is directly bonded to the DPP group) to minimize possible spatial interaction with the DPP group.

在許多實施方式中,該等hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’“雜芳基”基團可以獨立地選自具有以下結構的一個或所有的雜芳基,即: In many embodiments, the hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' "heteroaryl" groups may be independently selected from one or all of the heteroaryl groups having the structure Base, ie:

其中i)a係等於1、2、3或4的整數,或在一些實施方式中是等於1或2的整數;ii)每個X、X’、X”或X'''獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一C1-C30正鏈的、支鏈的或環狀的烷基;並且iii)每個Y、Y’、Y”以及Y'''可以獨立地選自N以及CR4,其中R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或 硫代烷氧基。 Wherein i) a is an integer equal to 1, 2, 3 or 4, or in some embodiments an integer equal to 1 or 2; ii) each X, X', X" or X"' is independently selected from O, S, Se, Si(R 3 ) 2 , and NR 3 , wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; and iii) each Y, Y' , Y" and Y''' may be independently selected from N and CR 4 , wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 positive-chain, branched or cyclic alkyl group, Fluoroalkyl, alkoxy, thioalkyl or thioalkoxy.

應該指出的是,對於剛在上面所示的hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’雜芳基,取決於X、X’、X”或X”’基團以及Y、Y’、Y”以及Y”’的選擇,所得的雜環可以具有多種物理的、溶解性的以及電子的特徵(從供電子到吸電子),該等特徵可以被用於調諧所得聚合物以及共聚物的該等特徵、電洞或電子傳輸特徵和/或光學帶隙。 It should be noted that for hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' heteroaryl just shown above, depending on X, X', X" or X"' group The choice of group and Y, Y', Y" and Y"', the resulting heterocyclic ring can have a variety of physical, soluble and electronic characteristics (from electron donation to electron absorption), which can be used for tuning These features, hole or electron transport characteristics and/or optical band gaps of the resulting polymers and copolymers.

在許多實施方式中,其結構在以上從類屬上示出的不同的hAr1、hAr1’、hAr11、hAr11’、hAr21以及hAr21’雜芳基的種類的實例可以藉由以下所示的雜環結構之一來舉例說明,即: 其中R3係一個C1-C30正鏈的、支鏈的或環狀的烷基,R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 In many embodiments, examples of the species of the different hAr 1 , hAr 1 ' , hAr 11 , hAr 11 ' , hAr 21 , and hAr 21 ' heteroaryl groups whose structures are shown above may be as follows One of the heterocyclic structures shown is exemplified, namely: Wherein R 3 is a C 1 -C 30 normal chain, branched or cyclic alkyl group, and R 4 is hydrogen, halogen, cyano or a C 1 -C 30 positive chain, branched or cyclic Alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy.

例如,在一些實施方式中,每個hAr1和hAr1’獨立地選自: 其中,R4和R4’係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 For example, in some embodiments, each hAr 1 and hAr 1 ' is independently selected from: Wherein R 4 and R 4 ' are hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or Thioalkoxy.

在另外的實施方式中,每個hAr1和hAr1’獨立地選自: In a further embodiment, each hAr 1 and hAr 1 ' is independently selected from:

在另外的實施方式中,每個hAr1和hAr1’獨立地選自: In a further embodiment, each hAr 1 and hAr 1 ' is independently selected from:

其中R3和/或R3’係一個C1-C30正鏈的、支鏈的或環狀的烷基,並且R4和/或R4’係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 Wherein R 3 and/or R 3 ' is a C 1 -C 30 normal chain, branched or cyclic alkyl group, and R 4 and/or R 4 ' is hydrogen, halogen, cyano or a C 1 -C 30 -stranded, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy.

在另外的實施方式中,每個hAr1和hAr1’獨立地選自: 其中,R4和R4’係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 In a further embodiment, each hAr 1 and hAr 1 ' is independently selected from: Wherein R 4 and R 4 ' are hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or Thioalkoxy.

在另外的實施方式中,每個hAr1和hAr1’獨立地選自: 其中,R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 In a further embodiment, each hAr 1 and hAr 1 ' is independently selected from: Wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy base.

在包含具有特定結構式(II)的重複單元RU1和具有特定結構式(III)的重複單元RU2的共聚物的一些實施方式中,每個hAr11和hAr11’可以獨立地選自: In some embodiments of the copolymer comprising repeating unit RU1 having the specific structural formula (II) and repeating unit RU2 having the specific structural formula (III), each of hAr 11 and hAr 11' may be independently selected from:

並且每個hAr21和hAr21’可以獨立地選自: 其中每個X、X’、X”或X”’以及每個Y、Y’、Y”以及Y”’可以具有以上已經詳述的任何含義。 And each of hAr 21 and hAr 21' can be independently selected from: Each of X, X', X" or X"' and each of Y, Y', Y" and Y"' may have any of the meanings already detailed above.

在包含具有特定結構式(II)的重複單元RU1和具有特定結構式(III)的重複單元RU2的共聚物的一些較佳的實施方式中,每個hAr11和hAr11’可以獨立地選自: 並且每個hAr21和hAr21’可以獨立地選自: 其中R3和/或R3’係一個C1-C30正鏈的、支鏈的或環狀的烷基,並且R4和/或R4’係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 In some preferred embodiments of the copolymer comprising the repeating unit RU1 having the specific structural formula (II) and the repeating unit RU2 having the specific structural formula (III), each of hAr 11 and hAr 11' may be independently selected from : And each of hAr 21 and hAr 21' can be independently selected from: Wherein R 3 and/or R 3 ' is a C 1 -C 30 normal chain, branched or cyclic alkyl group, and R 4 and/or R 4 ' is hydrogen, halogen, cyano or a C 1 -C 30 -stranded, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy.

在此說明的DPP聚合物還包含一可任選地取代的亞乙烯基亞基,該亞乙烯基亞基具有以下結構: 其中每個R2和R2’獨立地選自氫、氰基或C1-C30烷基、全氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基。在許多實施方式中,每個R2和R2’基團係氫。 The DPP polymer described herein also includes an optionally substituted vinylidene subunit having the following structure: Wherein each of R 2 and R 2 ' is independently selected from hydrogen, cyano or C 1 -C 30 alkyl, perfluoroalkyl, alkoxy, aryl, heteroaryl, carboxyalkyl or ethoxylated. . In many embodiments, each R 2 and R 2 ' group is hydrogen.

這類亞乙基亞基被認為在有助於包含化學式(I)的重複單元的DPP的聚合物以及包含化學式(II)和(III)的重複單元的共聚物的電子和物理特性方面起到重要作用,因為它們可以允許以一空間上非常無要求的方式沿著該聚合物或共聚物主鏈的擴大的共軛作用,這允許在DPP聚合物和共聚物的亞基之間高的共平面性,此高的共平面性允許在固態中高程度的分子間π-π堆積,此高的堆積可以導致在固態中電洞或電子遷移率的顯著增加。該等亞乙基亞基還可以有的功能係增加DPP聚合物或共聚物的溶解度和/或改善它們的溶液加工特徵。 Such an ethylene subunit is considered to play a role in the electronic and physical properties of a polymer which contributes to DPP comprising a repeating unit of the formula (I) and a copolymer comprising repeating units of the formulae (II) and (III). Importantly because they allow for an extended conjugation along the polymer or copolymer backbone in a spatially very undemanded manner, which allows for a high total between the DPP polymer and the subunits of the copolymer. Flatness, this high coplanarity allows for a high degree of intermolecular π-π stacking in the solid state, which can result in a significant increase in hole or electron mobility in the solid state. The functionalities of the ethylene subunits may also increase the solubility of the DPP polymer or copolymer and/or improve their solution processing characteristics.

除了結構通式(I)、(II)和/或(III)的重複單元,進一步的以及另外的類型的重複單元RU可以存在於在此說明的DPP聚合物或共聚物中,其存在量為小於約50(或40、或30或20或10或5或2或1)莫耳%。這類其他的重複單元經常包含多種多樣的雙官能雜芳基。例如,本發明的DPP聚合物和/或共聚物可以可任選地包含介於0莫耳%與50莫耳%之間的以下的重複單元:該等重複單元係具有以下化學通式中的一或多個的重複單元RU*,即: In addition to the repeating units of structural formula (I), (II) and/or (III), further and additional types of repeating units RU may be present in the DPP polymers or copolymers described herein, in amounts of Less than about 50 (or 40, or 30 or 20 or 10 or 5 or 2 or 1) mole %. Such other repeating units often contain a wide variety of difunctional heteroaryl groups. For example, the DPP polymer and/or copolymer of the present invention may optionally comprise between 0 mole % and 50 mole % of repeat units: the repeat units have the following chemical formula One or more repeating units RU*, ie:

其中a、以及每個X或X’、以及每個Y或Y’可以具有以上已經詳述的任何含義。化學式(IV)和(V)的這類重複單元的較佳的實例可以包括具有以下所示結構的雜芳基。 or Where a, and each X or X', and each Y or Y' may have any of the meanings already detailed above. Preferred examples of such repeating units of the formulae (IV) and (V) may include a heteroaryl group having the structure shown below.

其中R4和R4’可以獨立地選自氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 Wherein R 4 and R 4 ' may be independently selected from hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thio Alkyl or thioalkoxy.

就在此說明的DPP聚合物或共聚物的不同的實施方式的特性來說,在一些實施方式中,那些DPP聚合物或共聚物可以具有的藉由凝膠滲透層析使用聚苯乙烯校準標準品確定的數均聚合度為至少10。類似地,在此說明的DPP聚合物或共聚物在一些實施方式中可以具有的藉由凝膠滲透層析使用聚苯乙烯校準標準品確定的數均聚合度最 多是100。 With respect to the characteristics of the different embodiments of the DPP polymers or copolymers described herein, in some embodiments, those DPP polymers or copolymers may have polystyrene calibration standards by gel permeation chromatography. The number average degree of polymerization determined by the product is at least 10. Similarly, the DPP polymer or copolymer described herein may have, in some embodiments, the number average degree of polymerization determined by gel permeation chromatography using polystyrene calibration standards. More is 100.

在許多實施方式中,在此說明的不同的DPP聚合物和/或共聚物可以在普通的有機溶劑中具有出人意料高的溶解度,這對於調整油墨配製品以適應多種多樣的溶液印刷方法(例如噴墨印刷等)來用於製備所希望的有機電子裝置(例如光電池和/或電晶體)是大有益處的。因此,在一些實施方式中,該等DPP聚合物和/或共聚物在至少一種溶劑中在25℃至50℃範圍內選擇的一或多個溫度(例如35℃)下具有至少10 mg/ml、較佳的是至少20 mg/ml的溶解度,該溶劑選自以下組,該組由以下各項組成:甲苯、二甲苯、均三甲苯、四氫呋喃、氯仿、氯苯、二氯苯以及它們的混合物。例如:DPP聚合物和/或共聚物在25℃和/或50℃在甲苯中可以具有至少10 mg/ml的溶解度;DPP聚合物和/或共聚物在25℃和/或50℃在四氫呋喃中可以具有至少10 mg/ml的溶解度;和/或DPP聚合物和/或共聚物在25℃和/或50℃在由氯仿和氯苯以50:50重量比組成的一種混合物中可以具有至少10 mg/ml的溶解度。 In many embodiments, the different DPP polymers and/or copolymers described herein can have unexpectedly high solubility in common organic solvents, which is useful for adjusting ink formulations to accommodate a wide variety of solution printing processes (eg, spraying) Ink printing, etc., is of great benefit for the preparation of desired organic electronic devices, such as photovoltaic cells and/or transistors. Accordingly, in some embodiments, the DPP polymers and/or copolymers have at least 10 mg/ml at one or more temperatures (eg, 35 ° C) selected in the range of 25 ° C to 50 ° C in at least one solvent. Preferably, the solubility is at least 20 mg/ml, and the solvent is selected from the group consisting of toluene, xylene, mesitylene, tetrahydrofuran, chloroform, chlorobenzene, dichlorobenzene, and the like mixture. For example: DPP polymers and/or copolymers may have a solubility in toluene of at least 10 mg/ml at 25 ° C and/or 50 ° C; DPP polymers and / or copolymers in tetrahydrofuran at 25 ° C and / or 50 ° C May have a solubility of at least 10 mg/ml; and/or the DPP polymer and/or copolymer may have at least 10 in a mixture of chloroform and chlorobenzene in a weight ratio of 50:50 at 25 ° C and/or 50 ° C. Solubility in mg/ml.

聚合物和/或共聚物的合成 Synthesis of polymers and / or copolymers

下面呈現了用於製造為合成本發明的聚合物和/或共聚物所需要的可聚合的共聚單體的類屬合成方案,並且下 面在本揭露的“實例”部分中也提供了這樣的類屬合成方案的具體例子。 A generic synthesis scheme for the manufacture of polymerizable comonomers required for the synthesis of the polymers and/or copolymers of the present invention is presented below, and Specific examples of such generic synthesis schemes are also provided in the "Examples" section of this disclosure.

下面的合成圖展示了用於製造適合用於製造本發明聚合物的可聚合的溴代二雜芳基取代的二酮基吡咯並吡咯共聚單體的兩種通用方法。起始的雜芳基腈經常可以藉由本領域的普通技術人員所知道的許多方法製造,例如從對應的雜芳基醛或溴代雜芳基醛藉由與羥胺的縮合反應或藉由氰化物與雜芳基重氮鹽的縮合反應來製造(Mowry,D.T.化學評論(Chem.Rev.)1948,42,189-283.;Barclay,R.M.;Cordes,A.W.;MacKinnon,C.D.;Oakley,R.T.;Reed,R.W.材料化學(Chem.Mater.)1997,9,981-990。)。 The following synthetic schemes illustrate two general methods for making polymerizable bromodiheteroaryl substituted diketopyrrolopyrrole comonomers suitable for use in the manufacture of the polymers of the present invention. The starting heteroaryl nitrile can often be produced by a number of methods known to those skilled in the art, for example from the corresponding heteroaryl aldehyde or bromoheteroaryl aldehyde by condensation with hydroxylamine or by cyanide Manufactured by condensation reaction with a heteroaryl diazonium salt (Mowry, DT Chem. Rev. 1948, 42 , 189-283.; Barclay, RM; Cordes, AW; MacKinnon, CD; Oakley, RT; Reed , RW Materials Chemistry (Chem. Mater.) 1997, 9 , 981-990.).

可聚合的溴代二雜芳基取代的二酮基吡咯並吡咯共聚單體,如在以上圖中的m1和m2,各自可以藉由熟知的鈀催化Stille縮合反應與反-1,2-二(三丁基甲錫烷基)乙烯縮合(可任選地,在一種或多種另外的二溴代雜芳基共聚單體的存在下)以便產生包含化學式(I)的重複單元的聚合物。 A polymerizable bromodiheteroaryl-substituted diketopyrrolopyrrole comonomer, such as m1 and m2 in the above figures, each of which can be catalyzed by a well-known palladium-catalyzed Stille condensation reaction with trans-1,2-di (Tributylstannyl)ethylene condensation (optionally in the presence of one or more additional dibromoheteroaryl comonomers) to produce a polymer comprising repeating units of formula (I).

因此,在一些實施方式中,在此說明的本發明涉及用於製造在此說明的聚合物的方法,該等方法包括以下步驟:a)獲得或提供至少一種二雜芳基取代的二酮基吡咯並吡咯單體,該單體具有以下結構: Accordingly, in some embodiments, the invention described herein relates to methods for making the polymers described herein, the methods comprising the steps of: a) obtaining or providing at least one diheteroaryl substituted diketone group A pyrrolopyrrole monomer having the following structure:

其中,LG1係一離去基團,如溴原子、碘原子、有機磺酸基,或類似基團;b)獲得或提供至少一種二離去基團取代的乙烯單體,該單體具有以下結構: Wherein LG 1 is a leaving group such as a bromine atom, an iodine atom, an organic sulfonic acid group, or the like; b) an ethylene monomer obtained or provided with at least one di- leaving group, the monomer having The following structure:

其中LG2係一離去基團,該離去基團能夠藉由與LG1如SnR2” 3(其中R2”係烷基或芳基)反應而被消除;c)在一種過渡金屬催化劑錯合物的存在下,使包含該至少一種第一個二雜芳基取代的二酮基吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體的一種混合物發生反應,以便產生包含化學式(I)的重複單元的聚合物。 Wherein LG 2 is a leaving group capable of being eliminated by reaction with LG 1 such as SnR 2" 3 (wherein R 2 " alkyl or aryl); c) in a transition metal catalyst In the presence of a complex, a mixture comprising the at least one first diheteroaryl substituted diketopyrrolopyrrole monomer and the at least one dipartition group substituted ethylene monomer is reacted so that A polymer comprising repeating units of formula (I) is produced.

這類過渡金屬催化的偶聯/聚合反應係本領域所熟知的(特別是在鎳或鈀催化劑存在的情況下)。例如,合適 的鈀催化的偶聯/聚合方法包括芳基鹵化物或雜芳基鹵化物(即LG1=溴或碘)與有機錫化合物(LG1係SnR2” 3,其中R2”係烷基或芳基)之間的Stille偶聯,或芳基鹵化物或雜芳基鹵化物(即LG1=溴或碘)與有機硼酸酯化合物(即LG2=B(OR)2,其中R係烷基)之間的Suzuki偶聯,或芳基鹵化物或雜芳基鹵化物(即LG1=溴或碘)與有機矽化合物(即LG2=SiR2” 3,其中R2”係烷基或芳基)之間的Hyama偶聯。 Such transition metal catalyzed coupling/polymerization reactions are well known in the art (particularly in the presence of a nickel or palladium catalyst). For example, suitable palladium catalyzed coupling/polymerization processes include aryl halides or heteroaryl halides (ie, LG 1 = bromine or iodine) and organotin compounds (LG 1 based SnR 2" 3 , where R 2" Stille coupling between alkyl or aryl), or aryl halide or heteroaryl halide (ie LG 1 = bromine or iodine) and organoborate compound (ie LG 2 =B(OR) 2 , Wherein the Suzuki coupling between the R series alkyl groups, or the aryl halide or heteroaryl halide (ie LG 1 = bromine or iodine) and the organotellurium compound (ie LG 2 =SiR 2" 3 , wherein R 2 Hyama coupling between " alkyl or aryl " .

在這類催化偶聯/聚合反應中有用的典型的可溶性鈀催化劑錯合物包括乙酸鈀、四(三苯基膦)鈀(0)、[1,1'-二(二苯基膦基)二茂鐵]鈀(II)二氯化物或二(三苯基膦)鈀(II)二氯化物,以及三(二亞苄基丙酮)二鈀(0)(iePd2(dba)3),典型地在約0.1 wt%至約20 wt%的濃度下,並且可任選地存在另外的和/或過量的膦配位基(如三芳基膦)。 Typical soluble palladium catalyst complexes useful in such catalytic coupling/polymerization reactions include palladium acetate, tetrakis(triphenylphosphine)palladium(0), [1,1'-bis(diphenylphosphino). Ferrocene]palladium(II) dichloride or bis(triphenylphosphine)palladium(II) dichloride, and tris(dibenzylideneacetone)dipalladium(0)(iePd 2 (dba) 3 ), Typically at a concentration of from about 0.1 wt% to about 20 wt%, and optionally additional and/or excess phosphine ligands (such as triarylphosphine) may be present.

在一些實施方式中,反應混合物基本上不含除該至少一種第一個二雜芳基取代的二酮基吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體以外的任何單體。 In some embodiments, the reaction mixture is substantially free of any of the diketopyrrolopyrrole monomers substituted with the at least one first diheteroaryl group and the at least one di-group-substituted vinyl monomer. monomer.

在用於製造本發明聚合物的方法的許多實施方式中,該反應混合物包括基本上等莫耳量的至少一種二雜芳基取代的二酮基吡咯並吡咯單體以及至少一種二離去基團取代的乙烯單體。然而,在其他實施方式中,其他的共聚單體可以存在於反應混合物中以便製造共聚物。例如,在一些實施方式中,反應混合物進一步包括至少一種自反應性單體,該單體具有以下結構: LG1-hAr*-LG2其中,hAr*係C1-C60雜芳基,並且LG1和LG2係以上說明的離去基團。合適的C1-C60雜芳基的實例包括以下結構: In many embodiments of the process for making the polymer of the present invention, the reaction mixture comprises substantially equimolar amounts of at least one diheteroaryl-substituted diketopyrrolopyrrole monomer and at least one di- leaving group. A group of substituted vinyl monomers. However, in other embodiments, other comonomers may be present in the reaction mixture to make the copolymer. For example, in some embodiments, the reaction mixture further includes at least one self-reactive monomer having the structure: LG 1 -hAr*-LG 2 wherein hAr* is a C 1 -C 60 heteroaryl group, and LG 1 and LG 2 are the leaving groups described above. Examples of suitable C 1 -C 60 heteroaryl groups include the following structures:

其中a、LG1、LG2、X、X’、X”、X”’、Y、Y’、Y”以及Y”’係上面在此在別處所定義的。 Where a, LG 1 , LG 2 , X, X', X", X"', Y, Y', Y", and Y"' are defined herein elsewhere.

在這類實施方式中,該自反應性單體可以在過渡金屬催化劑的存在下(至少在一定程度上)自縮合以便形成具有以下結構的共聚物嵌段(在本發明的DPP共聚物中),即:-(hAr*)x-,其中,x係大於1的整數,並且較佳的是在2至100的範圍之內。 In such embodiments, the self-reactive monomer may self-condense (at least to some extent) in the presence of a transition metal catalyst to form a copolymer block having the following structure (in the DPP copolymer of the present invention) That is: -(hAr*) x -, wherein x is an integer greater than 1, and is preferably in the range of 2 to 100.

可替代地,DPP/hAr共聚單體的混合物如以下所示的m1或m2可以與二(三丁基甲錫烷基)乙烯縮合以便產生無 規或嵌段共聚物,該等共聚物包含至少一些包括化學式(II)和/或(III)的重複單元。因此,在一些實施方式中,在此說明的本發明涉及用於製造無規共聚物的方法,該等方法包括以下步驟:a)獲得或提供至少一種第一個二雜芳基取代的二酮基吡咯並吡咯單體,該單體具有以下結構: Alternatively, a mixture of DPP/hAr comonomers such as m1 or m2 as shown below may be condensed with bis(tributylstannyl)ethylene to produce random or block copolymers, the copolymers comprising at least some of Repeating units of formula (II) and / or (III). Accordingly, in some embodiments, the invention described herein relates to a process for making a random copolymer, the method comprising the steps of: a) obtaining or providing at least one first diheteroaryl substituted diketone A pyryrrolopyrrole monomer having the following structure:

其中LG1係一離去基團;b)獲得或提供至少一種第二個二雜芳基取代的二酮基吡咯並吡咯單體,該單體具有以下結構: Wherein LG 1 is a leaving group; b) obtaining or providing at least one second diheteroaryl substituted diketopyrrolopyrrole monomer having the following structure:

c)獲得或提供至少一種二離去基團取代的乙烯單體,該單體具有以下結構: c) obtaining or providing at least one di-group-substituted vinyl monomer having the following structure:

其中,LG2係一離去基團,該離去基團能夠藉由與LG1反應而被消除,d)在一種過渡金屬催化劑錯合物的存在下,使包含至少第一個和第二個二雜芳基取代的二酮基吡咯並吡咯單 體以及至少一種二離去基團取代的乙烯單體的一種混合物發生反應,以便產生該等共聚物。 Wherein LG 2 is a leaving group capable of being eliminated by reaction with LG 1 and d) comprising at least a first and a second in the presence of a transition metal catalyst complex A mixture of di-heteroaryl-substituted diketopyrrolopyrrole monomers and at least one di-substituent-substituted ethylene monomer is reacted to produce the copolymers.

在一些實施方式中,這類DPP共聚物係無規共聚物,其中R11和R11’係彼此完全相同的並且R21和R21’係彼此完全相同的。在其他實施方式中,這類DPP共聚物係嵌段共聚物,其中R11和R21係彼此不同的和/或R11’和R21’係彼此不同的。 In some embodiments, such DPP copolymers are random copolymers wherein R 11 and R 11 ' are identical to each other and R 21 and R 21 ' are identical to each other. In other embodiments, such DPP copolymer is a block copolymer wherein R 11 and R 21 are different from each other and/or R 11 ' and R 21 ' are different from each other.

雖然在DPP/hAr重複單元的序列可以是無規的或近無規的意義來說,藉由這類方法製備的共聚物可以是無規的或近無規的,但是也有可能的是藉由在反應混合物中包括具有以下結構的至少一種共聚單體,來將另外的無規的hAr*重複單元散佈在這類共聚物中,即:該共聚單體的結構如下:LG1-hAr*-LG1,其中,hAr*和LG1的可能結構已經先前在以上進行了說明。 Although the sequence of the DPP/hAr repeat unit may be random or nearly random, the copolymer prepared by such a method may be random or nearly random, but it is also possible At least one comonomer having the following structure is included in the reaction mixture to disperse additional random hAr* repeating units in such copolymers, ie, the comonomer has the following structure: LG 1 -hAr*- LG 1 , wherein the possible structures of hAr* and LG 1 have been previously described above.

下面在實例部分提供了合成這類聚合物的具體實例以及它們的特性。 Specific examples of the synthesis of such polymers and their properties are provided below in the Examples section.

包含聚合物和/或共聚物的有機電子裝置 Organic electronic device comprising polymer and/or copolymer

本發明的一些方面涉及新型的有機電子裝置,該等有機電子裝置包含化學式(I)的聚合物或包含具有在此說明的化學式(II)和(III)的重複單元的共聚物,該等裝置包括電晶體以及包含電晶體的不同的邏輯電路,以及太 陽能電池。那些最終用途的應用各自典型地要求在基底上形成本發明的共聚物的膜。本發明的聚合物和共聚物的有機膜可以藉由已知的方法進行製備,該等方法例如旋塗法、流延法、浸塗法、噴墨法、刮塗法、絲網印刷法、以及噴塗法。藉由使用此類方法,製備具有良好特性(如機械強度、韌性、以及耐久性)的有機膜而不會在該等膜中形成裂縫成為有可能的。因此,該等有機膜可以被較佳的是用於有機電子裝置例如光電池和OFET元件。 Some aspects of the invention relate to novel organic electronic devices comprising a polymer of formula (I) or a copolymer comprising repeating units of formula (II) and (III) as described herein, such devices Including transistors and different logic circuits containing transistors, and too Solar battery. Those applications for end use typically each require the formation of a film of the copolymer of the present invention on a substrate. The organic film of the polymer and the copolymer of the present invention can be produced by a known method such as spin coating, casting, dip coating, ink jet method, knife coating method, screen printing method, And spraying method. By using such a method, it is possible to prepare an organic film having good characteristics such as mechanical strength, toughness, and durability without forming cracks in the films. Therefore, the organic films can be preferably used for organic electronic devices such as photovoltaic cells and OFET elements.

包含化學式I的重複單元的聚合物或包含化學式(II)、(III)、(IV)以及(V)的重複單元的共聚物的膜典型地藉由在基底上塗布一種塗層液體來製備,該塗層液體藉由將該共聚物(在太陽能電池的情況下,以及典型地一種電子接受材料,例如富勒烯衍生物,如PCBM)溶解在一種溶劑(如二氯甲烷、四氫呋喃、氯仿、甲苯、氯苯、二氯苯或二甲苯)中來製備。該等塗布方法的具體實例包括噴塗法、旋塗法、刮塗法、浸塗法、流延塗布法、輥塗法、棒塗法、壓模塗布法、噴墨法、分配法等。在這點上,考慮所使用的聚合物的特性來選擇一種合適的方法和一種合適的溶劑。作為在其上形成本發明聚合物的膜的基底所使用的適當材料包括無機基底如玻璃板、矽板、ITO板以及FTO板;以及有機基底如塑膠板(例如PET膜、聚醯亞胺膜、以及聚苯乙烯膜),該等基底可以可任選地經受表面處理。較佳的是該基底具有一光滑表面。 A film comprising a polymer of a repeating unit of formula I or a copolymer comprising repeating units of formula (II), (III), (IV) and (V) is typically prepared by coating a coating liquid on a substrate, The coating liquid is dissolved in a solvent (such as dichloromethane, tetrahydrofuran, chloroform, in the case of a solar cell, and typically an electron accepting material such as a fullerene derivative such as PCBM). Prepared in toluene, chlorobenzene, dichlorobenzene or xylene). Specific examples of such coating methods include spray coating, spin coating, knife coating, dip coating, cast coating, roll coating, bar coating, die coating, ink jet, dispensing, and the like. In this regard, a suitable method and a suitable solvent are selected in consideration of the characteristics of the polymer used. Suitable materials for use as a substrate on which the film of the polymer of the present invention is formed include inorganic substrates such as glass plates, ruthenium plates, ITO plates, and FTO plates; and organic substrates such as plastic plates (for example, PET films, polyimide films). And the polystyrene film), the substrates may optionally be subjected to a surface treatment. Preferably, the substrate has a smooth surface.

本發明的有機薄膜電晶體的有機膜和有機半導體層的 厚度不受具體限制。然而,將該厚度確定為使得生成的膜或層係一種均勻的薄層(即,該膜或層不包括不利地影響其載體傳輸特性的縫隙或孔洞)。該有機半導體層的厚度一般不大於1微米並且較佳的是從5至200 nm。 Organic film and organic semiconductor layer of organic thin film transistor of the present invention The thickness is not specifically limited. However, the thickness is determined such that the resulting film or layer is a uniform thin layer (i.e., the film or layer does not include gaps or voids that adversely affect its carrier transport properties). The thickness of the organic semiconductor layer is generally not more than 1 μm and preferably from 5 to 200 nm.

製造包含本發明的聚合物和/或共聚物的電晶體 Making a transistor comprising the polymer and/or copolymer of the invention

本發明的有機薄膜電晶體典型地具有一種構造,這樣使得包含聚合物(包含化學式(I)的重複單元)或共聚物(包含化學式(II)、(III)、(IV)和/或(V)的重複單元)的一種有機半導體層可以被形成在基底上,同時還接觸該電晶體的源極電極、汲極電極、柵極電極以及絕緣層。 The organic thin film transistor of the present invention typically has a configuration such that it comprises a polymer (containing a repeating unit of formula (I)) or a copolymer (including formula (II), (III), (IV) and/or (V) An organic semiconductor layer of the repeating unit) may be formed on the substrate while also contacting the source electrode, the drain electrode, the gate electrode, and the insulating layer of the transistor.

以上製備的有機膜典型地經過退火。退火係在當該膜被放置在一基底上時進行,並且被認為允許改進在固態中共聚物分子的排序。退火溫度取決於構成基底的材料的特性來確定,但是較佳的是從室溫至300℃,並且更佳的是從50℃至300℃。在許多實施方式中,包含共聚物分子的電晶體和/或電路在介於約100℃與250℃之間的溫度進行熱退火。當退火溫度過低時,剩餘在有機膜中的有機溶劑不能很好地被從中去除。與此相反,當退火溫度過高時,有機膜傾向於被熱分解。退火較佳的是在真空、氮氣、氬氣或空氣氣氛中進行。也有可能的是在包括能夠溶解該聚合物的一種有機溶劑的氣體的氣氛中進行退火,因為該聚合物的分子運動被加速了,並且由此可以製備一良好 的有機薄膜。退火時間取決於聚合物的聚集速度而適當地確定。 The organic film prepared above is typically annealed. Annealing occurs when the film is placed on a substrate and is believed to allow for improved ordering of the copolymer molecules in the solid state. The annealing temperature is determined depending on the characteristics of the material constituting the substrate, but is preferably from room temperature to 300 ° C, and more preferably from 50 ° C to 300 ° C. In many embodiments, the transistors and/or circuits comprising the copolymer molecules are thermally annealed at a temperature between about 100 ° C and 250 ° C. When the annealing temperature is too low, the organic solvent remaining in the organic film is not well removed therefrom. In contrast, when the annealing temperature is too high, the organic film tends to be thermally decomposed. Annealing is preferably carried out in a vacuum, nitrogen, argon or air atmosphere. It is also possible to perform annealing in an atmosphere including a gas capable of dissolving an organic solvent of the polymer because the molecular motion of the polymer is accelerated, and thus a good one can be prepared. Organic film. The annealing time is appropriately determined depending on the aggregation speed of the polymer.

絕緣層被用於包含本發明的聚合物和/或共聚物的有機薄膜電晶體的柵極。可以將不同的絕緣材料用於該絕緣層。該等絕緣材料的具體實例包括:無機絕緣材料如氧化矽、氮化矽、氧化鋁、氮化鋁、氧化鈦、氧化鉭、氧化錫、氧化釩、鈦酸鍶鋇、鋯鈦酸鋇、鋯鈦酸鉛、鈦酸鑭鉛、鈦酸鍶、鈦酸鋇、氟化鋇鎂、鉭鈮酸鉍、氧化鉿、以及三氧化釔;有機絕緣材料如聚合物材料,例如聚醯亞胺、聚乙烯醇、聚乙烯酚、聚苯乙烯、聚酯、聚乙烯、聚苯硫醚、未取代的或鹵素原子取代的聚對苯二甲基、聚丙烯腈以及氰基乙基普魯蘭等等。該等材料可以單獨或以組合使用。在該等材料之中,較佳的是使用具有高介電常數以及低導電率的材料。 An insulating layer is used for the gate of the organic thin film transistor comprising the polymer and/or copolymer of the present invention. Different insulating materials can be used for the insulating layer. Specific examples of such insulating materials include: inorganic insulating materials such as cerium oxide, cerium nitride, aluminum oxide, aluminum nitride, titanium oxide, cerium oxide, tin oxide, vanadium oxide, barium titanate, barium zirconate titanate, zirconium Lead titanate, lead barium titanate, barium titanate, barium titanate, barium magnesium fluoride, barium strontium silicate, barium oxide, and antimony trioxide; organic insulating materials such as polymer materials, such as polyimine, poly Vinyl alcohol, polyvinyl phenol, polystyrene, polyester, polyethylene, polyphenylene sulfide, unsubstituted or halogen-substituted poly-p-xylylene, polyacrylonitrile, and cyanoethyl pullulan, etc. . These materials may be used singly or in combination. Among these materials, it is preferred to use a material having a high dielectric constant and a low electrical conductivity.

用於形成這種絕緣層的合適的方法包括:乾法如CVD法、電漿CVD法、電漿聚合法、以及氣相沉積法;濕法如噴塗法、旋塗法、浸塗法、噴墨塗布法、流延塗布法、刮塗法、以及棒塗法;等等。 Suitable methods for forming such an insulating layer include: dry methods such as CVD, plasma CVD, plasma polymerization, and vapor deposition; wet methods such as spray coating, spin coating, dip coating, spraying Ink coating method, cast coating method, knife coating method, and bar coating method; and the like.

為了改進該絕緣層與有機半導體層之間的粘附性、促進電荷傳輸、並且降低柵極電壓和漏泄電流,可以在該絕緣層與有機半導體層之間形成一有機薄膜(中間層)。在該中間層中使用的材料不受具體限制,只要該等材料不會在化學上影響該有機半導體層的特性,並且可以為此使用例如有機材料的分子膜、以及聚合物的薄膜。用於製備該 等分子膜的材料的具體例子包括偶聯劑如十八烷基三氯矽烷、辛基三氯矽烷、辛基三甲氧基矽烷、六甲基二矽氮烷(HMDS)、以及十八烷基膦酸。用於製備該等聚合物膜的聚合物的具體例子包括上面提到的用在絕緣層中的聚合物。此類聚合物膜可以用作該絕緣層連同該中間層。 In order to improve adhesion between the insulating layer and the organic semiconductor layer, promote charge transport, and lower gate voltage and leakage current, an organic thin film (intermediate layer) may be formed between the insulating layer and the organic semiconductor layer. The materials used in the intermediate layer are not particularly limited as long as the materials do not chemically affect the characteristics of the organic semiconductor layer, and a molecular film such as an organic material, and a film of a polymer may be used for this purpose. Used to prepare this Specific examples of the material of the isomeric film include a coupling agent such as octadecyltrichloromethane, octyltrichlorodecane, octyltrimethoxydecane, hexamethyldiazepine (HMDS), and octadecyl group. Phosphonic acid. Specific examples of the polymer used to prepare the polymer films include the above-mentioned polymers used in the insulating layer. Such a polymer film can be used as the insulating layer together with the intermediate layer.

本發明的有機薄膜電晶體的電極(如柵極電極、源極電極以及汲極電極)的材料不受具體限制,只要該等材料係導電的。該等材料的具體例子包括:金屬如鉑、金、銀、鎳、鉻、鉻、銅、鐵、錫、銻、鉛、鉭、銦、鋁、鋅、鎢、鈦、鈣以及鎂;該等金屬的合金;導電的金屬氧化物如氧化銦錫(ITO);無機或有機的半導體,其導電性藉由摻雜或類似作用來改進,該等半導體例如矽單晶、多晶矽、非晶態矽、鍺、石墨、碳奈米管、聚乙炔、聚對苯撐、聚噻吩、聚吡咯、聚苯胺、聚噻吩乙炔、聚對苯乙炔、以及聚乙烯二氧噻吩(PEDOT)和聚苯乙烯磺酸的複合物。 The materials of the electrodes (such as the gate electrode, the source electrode, and the drain electrode) of the organic thin film transistor of the present invention are not particularly limited as long as the materials are electrically conductive. Specific examples of such materials include: metals such as platinum, gold, silver, nickel, chromium, chromium, copper, iron, tin, antimony, lead, antimony, indium, aluminum, zinc, tungsten, titanium, calcium, and magnesium; An alloy of a metal; a conductive metal oxide such as indium tin oxide (ITO); an inorganic or organic semiconductor whose conductivity is improved by doping or the like, such as germanium single crystal, polycrystalline germanium, amorphous germanium. , antimony, graphite, carbon nanotubes, polyacetylene, polyparaphenylene, polythiophene, polypyrrole, polyaniline, polythiophene acetylene, polyparaphenylene acetylene, and polyethylene dioxythiophene (PEDOT) and polystyrene sulfonate Acid complex.

從包含如以下實例1和6中說明的HD-PPTV的示例性電晶體測得的平均電洞遷移率在0.091至0.17 cm2 V-1 s-1的窄範圍內,並且平均電子遷移率係0.012至0.019 cm2 V-1 s-1,而電流開關比係102至103。相比于本發明人已知的習知技術,在該等電晶體中的電洞和電子遷移率以及所得的雙極特性的該等值出人意料地高。電洞和電子傳輸的閾值電壓係較正的,對於p型溝道操作具有-9.0至-1.6 V並且對於n型溝道模式具有22.7至32.1 V。 The average hole mobility measured from an exemplary transistor including HD-PPTV as explained in Examples 1 and 6 below was in a narrow range of 0.091 to 0.17 cm 2 V -1 s -1 , and the average electron mobility system was 0.012 to 0.019 cm 2 V -1 s -1 , and the current switching ratio is 10 2 to 10 3 . The values of the hole and electron mobility and the resulting bipolar characteristics in the transistors are surprisingly high compared to the prior art known to the inventors. The threshold voltages for hole and electron transfer are relatively positive, with -9.0 to -1.6 V for p-type channel operation and 22.7 to 32.1 V for n-type channel mode.

在此說明的DPP聚合物和共聚物可以具有出乎意料優越的電洞遷移率約0.1 cm2 V-1 s-1或更大,該電洞遷移率係從一薄膜電晶體測得的,該薄膜電晶體具有一底柵極、底接觸幾何形狀,使用經過摻雜的矽作為柵極材料、二氧化矽作為柵極電介質,使用金源極以及在400至800 μm溝道寬度以及20至40 μm溝道長度具有一鉻膠粘層的汲極電極,並且使用該等共聚物作為有源半導體。 The DPP polymers and copolymers described herein can have an unexpectedly superior hole mobility of about 0.1 cm 2 V -1 s -1 or greater, which is measured from a thin film transistor. The thin film transistor has a bottom gate, bottom contact geometry, using doped germanium as the gate material, germanium dioxide as the gate dielectric, gold source and channel widths of 400 to 800 μm and 20 to A 40 μm channel length has a chrome-adhesive drain electrode and these copolymers are used as active semiconductors.

類似地,在此說明的DPP聚合物和共聚物可以具有出乎意料優越的電子遷移率約0.01 cm2/Vsec或更大,這係從一薄膜電晶體測得的,該薄膜電晶體具有一底柵極、底接觸幾何形狀,使用經過摻雜的矽作為柵極材料、二氧化矽作為柵極電介質,使用金源極以及在400至800 μm溝道寬度以及20至40 μm溝道長度具有一鉻膠粘層的汲極電極,並且使用該等共聚物作為有源半導體。 Similarly, the DPP polymers and copolymers described herein can have an unexpectedly superior electron mobility of about 0.01 cm 2 /Vsec or greater, as measured from a thin film transistor having a Bottom gate, bottom contact geometry, using doped germanium as gate material, germanium dioxide as gate dielectric, gold source and channel width of 400 to 800 μm and channel length of 20 to 40 μm A ruthenium electrode of a chrome-adhesive layer, and these copolymers are used as active semiconductors.

以上說明的一些DPP聚合物和/或共聚物展現了雙極特徵,並且可以具有相平衡的電洞遷移率和約0.01 cm2 V-1 s-1或更大的電子遷移率,該電洞遷移率和電子遷移率係從一薄膜電晶體測得的,該薄膜電晶體具有一底柵極、底接觸幾何形狀,使用經過摻雜的矽作為柵極材料、二氧化矽作為柵極電介質,使用金源極以及在400至800 μm溝道寬度以及20至40 μm溝道長度具有一鉻膠粘層的汲極電極,並且使用該等共聚物作為有源半導體。雖然從包含如在實例中說明的HD-PPTV單個有源層的雙極性電晶 體觀察到的開/關比和閾值電壓對於一些應用可能不是最佳的,但是包含具有如此高的電洞和電子遷移率的雙極性材料的電晶體對於在某些低性能和低成本的應用中(如RFID標籤)的使用可以是合適的並且出乎意料地在經濟上優越的。我們已經清楚地證明了不僅具有兩個雙極性電晶體的逆變器而且更加複雜的電子邏輯閘(由3-或更多的雙極性電晶體組成並且具有2-或更多的輸入信號,如反及閘或者反或閘)可以藉由實現雙極性聚合物半導體(如HD-PPTV)來構建。 Some of the DPP polymers and/or copolymers described above exhibit bipolar characteristics and may have a phase equilibrated hole mobility and an electron mobility of about 0.01 cm 2 V -1 s -1 or greater. Mobility and electron mobility are measured from a thin film transistor having a bottom gate, bottom contact geometry, using doped germanium as the gate material, and germanium dioxide as the gate dielectric. A gold source and a gate electrode having a chromium adhesive layer at a channel width of 400 to 800 μm and a channel length of 20 to 40 μm were used, and the copolymers were used as active semiconductors. Although the on/off ratio and threshold voltage observed from a bipolar transistor containing a single active layer of HD-PPTV as illustrated in the examples may not be optimal for some applications, it includes such high holes and electrons. Mobility of mobility bipolar materials may be suitable and unexpectedly economically superior for use in certain low performance and low cost applications, such as RFID tags. We have clearly demonstrated that not only inverters with two bipolar transistors but also more complex electronic logic gates (composed of three or more bipolar transistors and with 2- or more input signals, such as The anti-gate or anti-gate or gate can be constructed by implementing a bipolar polymer semiconductor such as HD-PPTV.

製造包含本發明的聚合物和/或共聚物的積體電路 Manufacturing an integrated circuit comprising the polymer and/or copolymer of the present invention

包含本發明的共聚物的互補積體電路如逆變器、反及邏輯電路、反或邏輯電路等等典型地具有可以起到n型溝道或p型溝道裝置的作用的一或多個電晶體。一積體電路的構成電晶體被電連接在一普通的基底或多個分離的基底上。一電晶體的構成材料如電極、絕緣體以及在此說明的DPP聚合物和共聚物藉由照相平版印刷術、軟光刻、旋塗、印刷法、氣相沉積和/或自組裝來形成。 Complementary integrated circuits including the copolymers of the present invention, such as inverters, inverse and logic circuits, inverse or logic circuits, and the like, typically have one or more that can function as n-type or p-channel devices Transistor. The constituent transistors of an integrated circuit are electrically connected to a common substrate or a plurality of separate substrates. The constituent materials of a transistor such as an electrode, an insulator, and the DPP polymer and copolymer described herein are formed by photolithography, soft lithography, spin coating, printing, vapor deposition, and/or self-assembly.

製造包含DPP聚合物和/或共聚物的太陽能電池 Manufacturing solar cells comprising DPP polymers and/or copolymers

在此說明的本發明的一方面係太陽能電池,該等太陽能電池包含以上所說明的DPP聚合物和/或共聚物,並且還典型地包含一種電子接受材料如富勒烯或富勒烯衍生物如PCBM。 One aspect of the invention described herein is a solar cell comprising the DPP polymer and/or copolymer described above, and also typically comprising an electron accepting material such as fullerene or fullerene derivative. Such as PCBM.

這類電池可以典型地藉由以下步驟來製造:首先在ITO塗布的玻璃基底之上以1500 rpm、時間60 s旋塗一PEDOT緩衝層,並且在真空下在150℃乾燥10 min以便形成一陽極。PEDOT層的厚度應該為約40 nm。 Such a battery can typically be manufactured by first spinning a PEDOT buffer layer over ITO coated glass substrate at 1500 rpm for 60 s and drying at 150 ° C for 10 min under vacuum to form an anode. . The thickness of the PEDOT layer should be about 40 nm.

用於溶解本發明的聚合物和/或共聚物與電子受體的混合物的溶劑可以是氯仿、氯苯、1,2-二氯苯等。用於共聚物/富勒烯共混物的溶劑可以是一種單一溶劑例如氯仿、氯苯、1,2-二氯苯、或兩種或三種不同溶劑的混合物,第二(第三)種溶劑可以是1,8-二碘辛烷、1,8-二溴辛烷、1,8-辛二硫醇、等等。該有源共混層(共聚物和富勒烯共混物)可以由共聚物/富勒烯共混物溶液以1000 rpm的速度、時間30 s被旋塗到PEDOT層之上,並且然後在手套箱中在150℃±40℃的熱板上退火10 min。該有源層還可以在空氣中進行旋塗並且在真空烘箱中乾燥而不進行熱退火。 The solvent used to dissolve the mixture of the polymer and/or copolymer of the present invention and the electron acceptor may be chloroform, chlorobenzene, 1,2-dichlorobenzene or the like. The solvent for the copolymer/fullerene blend may be a single solvent such as chloroform, chlorobenzene, 1,2-dichlorobenzene, or a mixture of two or three different solvents, and a second (third) solvent. It may be 1,8-diiodooctane, 1,8-dibromooctane, 1,8-octanedithiol, and the like. The active blend layer (copolymer and fullerene blend) can be spin coated onto the PEDOT layer from a copolymer/fullerene blend solution at 1000 rpm for 30 s and then in a glove The box was annealed on a hot plate at 150 ° C ± 40 ° C for 10 min. The active layer can also be spin coated in air and dried in a vacuum oven without thermal annealing.

在冷卻下來之後,將塗布有共聚物的基底從手套箱中取出,並且載入於一熱蒸發器中用於陰極的沉積。由1.0 nm LiF以及80 nm鋁層組成的陰極可以藉由一蔭罩在8×10-7托的真空中被相繼沉積到共聚物/電子受體有源層之上。 After cooling down, the substrate coated with the copolymer was taken out of the glove box and loaded into a thermal evaporator for deposition of the cathode. A cathode consisting of a 1.0 nm LiF and an 80 nm aluminum layer can be successively deposited onto the copolymer/electron acceptor active layer by a shadow mask in a vacuum of 8 x 10 -7 Torr.

實例 Instance

以上說明的不同的發明藉由下列具體實例進一步展示 ,該等實例不希望被以任何方式解釋為對本發明的揭露或因此附上的申請專利範圍的範圍的強加的限制。相反,將清楚理解的是可以採取其不同的其他的實施方式、變更、以及等效物,在閱讀在此的說明後,它們可以本身向本領域的普通技術人員表明而無須偏離本發明的精神或該等所附申請專利範圍的範圍。 The different inventions described above are further demonstrated by the following specific examples. The examples are not intended to be construed as limiting the scope of the invention, or the scope of the appended claims. Rather, it is to be understood that various other embodiments, modifications, and equivalents may be present, which, after reading the description herein, may be apparent to those of ordinary skill in the art without departing from the spirit of the invention. Or the scope of the appended claims.

材料 -1,2-二(三丁基甲錫烷基)乙烯從阿法埃莎公司(Alfa Aesar)購買,並且按收到的原樣使用。無水氯苯以及其他的化學品從阿耳德林公司(Aldrich)購買,並且按收到的原樣使用。 Materials trans-1,2-bis (tri-butylstannyl) ethylene was purchased from Alfa Aesar (Alfa Aesar), and the press used as received. Anhydrous chlorobenzene and other chemicals were purchased from Aldrich and used as received.

3,6-二(5-溴-噻吩-2-基)-2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮(m1)藉由Bürgi,L.;Turbiez,M.;Pfeiffer,R.;Bienewald,F.;Kirner,H.-J.;Winnewisser,C.先進材料(Adv.Mater.)2008,20,2217和/或Bijleveld,J.C.;Zoombelt,A.P.;Mathijssen,S.G.J.;Wienk,M.M.;Turbiez,M.;deLeeuw,D.M.;Janssen,R.A.J.美國化學會志(J.Am.Chem.Soc.)2009,131,16616報導的方法製備。3,6-二(4-溴苯基)-2,5-二(2-己基癸基)-吡咯並[3,4-c]吡咯-1,4-二酮(m2)藉由Fukuda,M.;Kodama,K.;Yamamoto,H.;Mito,K.染料和顏料(Dyes and Pigments)2004,63,115報導的方法合成。 3,6-bis(5-bromo-thiophen-2-yl)-2,5-di(2-hexylfluorenyl)pyrrolo[3,4-c]pyrrole-1,4-dione (m1) By B ü rgi, L.; Turbiez, M.; Pfeiffer, R.; Bienewald, F.; Kirner, H.-J.; Winnewisser, C. Advanced Materials (Adv. Mater.) 2008, 20 , 2217 and / Or Bijleveld, JC; Zoombelt, AP; Mathijssen, SGJ; Wienk, MM; Turbiez, M.; deLeeuw, DM; Janssen, RAJ , J. Am. Chem. Soc., 2009, 131 , 16616 Method preparation. 3,6-bis(4-bromophenyl)-2,5-di(2-hexyldecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione (m2) by Fukuda, M.; Kodama, K.; Yamamoto, H.; Mito, K. Dyes and Pigments 2004, 63 , 115 reported synthesis.

表徵1H NMR譜在300 MHz的Bruker-AF300光譜儀上記錄。紫外-可見吸收光譜在Perkin-Elmer model Lambda 900紫外/可見/近紅外分光光度計上記錄。光致發 光(PL)發射光譜使用Photon Technology International(PTI)有限公司的型號QM-2001-4分光螢光計獲得。為該等聚合物報導的分子量係在Polymer Lab的凝膠滲透層析(GPC)Model 120(DRI,PL-BV400HT Viscometer)上相對於聚苯乙烯標準品在氯苯中在60℃確定的。X射線衍射(XRD)圖在Bruker AXS D8 Focus衍射儀上使用Cu Kα射束(40 kV,40 mA;λ=0.15418 nm)獲得。以掃描速率0.01°/s從2θ角2至35°獲得數據從以下方程計算層間距(d-spacing),即:nλ=2d sin θ。差示掃描量熱法(DSC)掃描圖在TA Instrument Q20上以10℃/min的加熱速率獲得。循環伏安實驗在EG&G Princeton Applied Research Potentiostat/Galvanostat(Model 273A)上使用0.1 M的四丁基六氟磷酸銨(Bu4NPF6)的乙腈溶液作為電解質而完成。在所有的實驗中使用一種三電極的電池。將鉑絲電極用作反電極以及工作電極並且使用銀/銀離子電極(在0.1 M的AgNO3溶液中的Ag,Bioanalytical System有限公司)作為參比電極。該Ag/Ag+(AgNO3)參比電極在實驗開始時藉由在作為內標物的二茂鐵上運行循環伏安法進行校準。然後將參照Ag/Ag+電極獲得的位勢值換算成飽和甘汞電極(SCE)標度。藉由將鉑絲浸入在氯仿/氯代苯中的10 wt%溶液中並且乾燥30 min,將聚合物的膜塗布在工作電極上。 Characterization of 1 H NMR spectra was recorded on a 300 MHz Bruker-AF300 spectrometer. UV-visible absorption spectra were recorded on a Perkin-Elmer model Lambda 900 UV/Vis/NIR spectrophotometer. Photoluminescence (PL) emission spectra were obtained using a Model QM-2001-4 spectrofluorometer from Photon Technology International (PTI) Co., Ltd. The molecular weights reported for these polymers were determined on Polymer Lab's Gel Permeation Chromatography (GPC) Model 120 (DRI, PL-BV400 HT Viscometer) relative to polystyrene standards in chlorobenzene at 60 °C. X-ray diffraction (XRD) images were obtained on a Bruker AXS D8 Focus diffractometer using a Cu Kα beam (40 kV, 40 mA; λ = 0.141618 nm). The data obtained from the 2θ angle 2 to 35° at a scan rate of 0.01°/s was calculated from the following equation: d-spacing, ie: nλ=2d sin θ. A differential scanning calorimetry (DSC) scan was obtained on a TA Instrument Q20 at a heating rate of 10 °C/min. Cyclic voltammetry experiments were performed on an EG&G Princeton Applied Research Potentiostat/Galvanostat (Model 273A) using 0.1 M solution of tetrabutylammonium hexafluorophosphate (Bu 4 NPF 6 ) in acetonitrile as the electrolyte. A three-electrode cell was used in all experiments. A platinum wire electrode was used as the counter electrode and the working electrode and a silver/silver ion electrode (Ag in a 0.1 M AgNO 3 solution, Bioanalytical System Co., Ltd.) was used as a reference electrode. The Ag/Ag + (AgNO 3 ) reference electrode was calibrated at the beginning of the experiment by running cyclic voltammetry on ferrocene as an internal standard. The potential value obtained with reference to the Ag/Ag + electrode is then converted to a saturated calomel electrode (SCE) scale. A film of the polymer was coated on the working electrode by dipping the platinum wire into a 10 wt% solution in chloroform/chlorobenzene and drying for 30 min.

實例1-聚[3,6-(2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯- 1,4-二酮)-alt-1,2-二-(2’-噻吩基)乙烯基-5’,5”-二基],HD-PPTV的合成 Example 1 - Poly[3,6-(2,5-bis(2-hexylfluorenyl)pyrrolo[3,4-c]pyrrole-1,4-dione)- alt -1,2-di-( Synthesis of 2'-thienyl)vinyl-5',5"-diyl], HD-PPTV

聚[3,6-(2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮)-alt-1,2-二-(2’-噻吩基)乙烯基-5’,5”-二基],HD-PPTV。將3,6-二(5-溴-噻吩-2-基)-2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮(m1)(480 mg,0.53 mmol)和-1,2-二(三丁基甲錫烷基)乙烯(320.8 mg,0.53 mmol)溶解在無水氯苯(18 mL)中,並且使用氬氣清洗。加入Pd2(dba)3催化劑(9.7 mg,0.01 mmol)和P(o-toyl)3配位基(12.9 mg,0.04 mmol)並且脫氣。在使用氬氣清洗5 min後,將該溶液在120℃回流2天。然後將該溶液驟冷並且沉澱到甲醇中。將固體過濾並且使用丙酮進行索氏提取,並且在真空烘箱中乾燥以便提供一種暗綠色的固體(398 mg,產率:95%)。1H NMR(CDCl3),δ(ppm):8.93(br,2H),7.01(br,4H),4.09(br,4H),197(br,2H),1.25(48H),0.87(br,12H)。 Poly[3,6-(2,5-bis(2-hexylfluorenyl)pyrrolo[3,4-c]pyrrole-1,4-dione)- alt -1,2-di-(2'- Thienyl)vinyl-5',5"-diyl], HD-PPTV. 3,6-bis(5-bromo-thiophen-2-yl)-2,5-di(2-hexylfluorenyl) Pyrrolo[3,4-c]pyrrole-1,4-dione (m1) (480 mg, 0.53 mmol) and trans -1,2-bis(tributylstannyl)ethylene (320.8 mg, 0.53 mmol) Dissolved in anhydrous chlorobenzene (18 mL) and purged with argon. Add Pd 2 (dba) 3 catalyst (9.7 mg, 0.01 mmol) and P( o -toyl) 3 ligand (12.9 mg, 0.04 mmol) And degassing. After washing with argon for 5 min, the solution was refluxed for 2 days at 120 ° C. The solution was then quenched and precipitated into methanol. The solid was filtered and subjected to Soxhlet extraction using acetone, and in a vacuum oven Drying to provide a dark green solid (398 mg, yield: 95%). 1 H NMR (CDCl 3 ), δ (ppm): 8.93 (br, 2H), 7.01 (br, 4H), 4.09 (br) , 4H), 197 (br, 2H), 1.25 (48H), 0.87 (br, 12H).

對比實例2-聚[3,6-(2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮)-alt-1,2-二苯乙烯基-4’,4”-二基],HD-PPTV的合成 Comparative Example 2 - Poly[3,6-(2,5-bis(2-hexylfluorenyl)pyrrolo[3,4-c]pyrrole-1,4-dione)- alt -1,2-diphenyl Synthesis of vinyl-4',4"-diyl], HD-PPTV

聚[3,6-(2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮)-alt-1,2-二苯乙烯基-4’,4”-二基],HD-PPTV,它在“hAr”亞基的多個位置上包含六元苯環(藉由以上的反應以類似於在實例1中使用的方式來製備)。紫色的固體,產率:47%。1H NMR(CDCl3),δ(ppm):7.63(br,8H),7.09(br,2H),3.85(br,4H),1.7-1.25(br,50H),0.89(br,12H)。 Poly[3,6-(2,5-bis(2-hexylfluorenyl)pyrrolo[3,4-c]pyrrole-1,4-dione)- alt -1,2-distyryl-4 ',4"-diyl], HD-PPTV, which contains a six-membered benzene ring at various positions of the "hAr" subunit (prepared by the above reaction in a manner similar to that used in Example 1). The yield of the purple solid was 47%. 1 H NMR (CDCl 3 ), δ (ppm): 7.63 (br, 8H), 7.09 (br, 2H), 3.85 (br, 4H), 1.7-1.25 (br, 50H), 0.89 (br, 12H).

對比實例3-聚[3,6-(2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮)-alt-1,2-二苯乙烯基-4’,4”-二基],HD-PPTV的合成 Comparative Example 3 - Poly[3,6-(2,5-bis(2-hexylfluorenyl)pyrrolo[3,4-c]pyrrole-1,4-dione)- alt -1,2-diphenyl Synthesis of vinyl-4',4"-diyl], HD-PPTV

聚{[3,6-(2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮)-alt-1,2-二苯乙烯基-4’,4”-二基]-co-3,6-(2,5-二(2-己基癸基)吡咯並[3,4-c]吡咯-1,4-二酮)-alt-1,2-二-(2’-噻吩基)乙烯基-5’,5”-二基]},PPTV,它在“hAr”亞基的 一些位置上包含六元苯環(如以上所示來合成)。黑色的固體,產率:33%。1H NMR(CDCl3),δ(ppm):8.92(br,1H),7.84-6.74(br,7H),4.07(br,2H),3.82(br,2H),1.94-1.25(br,49H),0.87(br,12H)。該無規共聚物的實際組成(x)使用如下的α-亞甲基質子共振的積分計算出來的值為0.5,即:x=δ(4.07)/[δ(4.07)+δ(3.82)]。 Poly{[3,6-(2,5-bis(2-hexylfluorenyl)pyrrolo[3,4-c]pyrrole-1,4-dione)- alt -1,2-distyryl- 4',4"-diyl] -co -3,6-(2,5-bis(2-hexyldecyl)pyrrolo[3,4-c]pyrrole-1,4-dione)- alt - 1,2-di-(2'-thienyl)vinyl-5',5"-diyl]}, PPTV, which contains a six-membered benzene ring at some positions of the "hAr" subunit (as shown above) To synthesize). Black solid, yield: 33%. 1 H NMR (CDCl 3 ), δ (ppm): 8.92 (br, 1H), 7.84-6.74 (br, 7H), 4.07 (br, 2H), 3.82 (br, 2H), 1.94-1.25 (br, 49H) ), 0.87 (br, 12H). The actual composition (x) of the random copolymer is 0.5 using the integral of the α-methylene proton resonance as follows: x = δ (4.07) / [δ (4.07) + δ (3.82)] .

實例4-HD-PPTV、HD-PPPV以及PPTPV共聚物的物理特性 Example 4 - Physical Properties of HD-PPTV, HD-PPPV, and PPTPV Copolymers

HD-PPTV和PPTPV在普通的有機溶劑如氯仿、氯苯以及1,2-二氯苯中在高濃度(10-20 mg/mL)都具有良好的溶解度,而HD-PPPV僅顯示了較差的溶解度(<2 mg/mL)。三種共聚物的數均分子量(M n)在21,800至88,800 g/mol範圍內,而多分散性指數(PDI)為2.32至3.60,如在表1中所總結的。 HD-PPTV and PPTPV have good solubility in high concentrations (10-20 mg/mL) in common organic solvents such as chloroform, chlorobenzene and 1,2-dichlorobenzene, while HD-PPPV only shows poor Solubility (<2 mg/mL). Number average molecular weight of three kinds of copolymer (M n) in the 21,800 to 88,800 g / mol range, the polydispersity index (PDI) of 2.32 to 3.60, as summarized in Table 1.

該等包含內醯胺的基於DPP的共聚物HD-PPTV、HD-PPPV以及PPTPV證明了良好的熱穩定性,但是對於這三種聚(亞芳基亞乙烯基)藉由差示掃描熱量法在介於 0℃至350℃之間未觀察到明顯的熱轉變(見圖1)。 The DPP-based copolymers HD-PPTV, HD-PPPV and PPTPV containing indoleamine demonstrate good thermal stability, but for these three poly(arylene vinylene) by differential scanning calorimetry Between No significant thermal transition was observed between 0 °C and 350 °C (see Figure 1).

光物理特性。圖2a和圖2b示出了HD-PPTV、HD-PPPV以及PPTPV這三種共聚物在稀溶液(1×10-6至1×10-5 M)中以及作為薄膜的光學吸收光譜。在甲苯溶液中(圖2a),HD-PPPV和HD-PPTV分別在538 nm和887 nm處展現出最大吸收(λmax)。在薄膜中(圖2b),HD-PPPV和HD-PPTV分別在537 nm和814 nm處展現出最大吸收λmax。HD-PPPV具有一2.00 eV的光學帶隙,它小於對於聚(1,4-二酮-2,5-二烷基-3,6-二苯基吡咯並[3,4-c]吡咯)所報導的2.09至2.13 eV(見Rabindranath,A.R.;Zhu,Y.;Heim,I.;Tieke,B.大分子(Macromolecules)2006,39,8250)。類似地,HD-PPTV具有一1.22 eV的光學帶隙,它略小於對於聚(1,4-二酮-2,5-二辛基-3,6-二(噻吩-5-基)吡咯並[3,4-c]吡咯)報導的1,25 eV(見Bijleveld,J.C.;Zoombelt,A.P.;Mathijssen,S.G.J.;Wienk,M.M.;Turbiez,M.;de Leeuw,D.M.;Janssen,R.A.J.美國化學會志(J.Am.Chem.Soc.)2009,131,16616)。 Photophysical properties. Figures 2a and 2b show the optical absorption spectra of three copolymers of HD-PPTV, HD-PPPV and PPTPV in a dilute solution (1 x 10 -6 to 1 x 10 -5 M) and as a film. In the toluene solution (Fig. 2a), HD-PPPV and HD-PPTV exhibited maximum absorption (λ max ) at 538 nm and 887 nm, respectively. In the film (Fig. 2b), HD-PPPV and HD-PPTV exhibited maximum absorption λ max at 537 nm and 814 nm, respectively. HD-PPPV has an optical band gap of 2.00 eV, which is smaller than for poly(1,4-diketo-2,5-dialkyl-3,6-diphenylpyrrolo[3,4-c]pyrrole) The reported 2.09 to 2.13 eV (see Rabindranath, AR; Zhu, Y.; Heim, I.; Tieke, B. Macromolecules 2006, 39 , 8250). Similarly, HD-PPTV has an optical band gap of 1.22 eV which is slightly smaller than for poly(1,4-diketo-2,5-dioctyl-3,6-di(thiophen-5-yl)pyrrole [3,4-c]pyrrole reported at 1,25 eV (see Bijleveld, JC; Zoombelt, AP; Mathijssen, SGJ; Wienk, MM; Turbiez, M.; de Leeuw, DM; Janssen, RAJ American Chemical Society) (J. Am. Chem. Soc.) 2009, 131 , 16616).

圖3a和圖3b示出了HD-PPTV以及PPTPV的光致發光(PL)發射光譜。可能是因為弱勢(weakness)超出了檢測極限和/或在固態中的淬滅,沒有獲得HD-PPTV的PL光譜。HD-PPPV係發紅色光的,在稀溶液中和作為薄膜的PL最大值分別在647和653 nm處。此HD-PPPV聚合物與其他的基於DPP的聚合物相似,在稀溶液中和作 為薄膜具有109以及116 nm的較大的斯托克位移。與HD-PPPV相類似,無規共聚物PPTPV在稀溶液中具有中心在651 nm的一弱的PL峰,但是在薄膜中該光致發光幾乎完全被淬滅。 Figures 3a and 3b show the photoluminescence (PL) emission spectra of HD-PPTV and PPTPV. It may be because the weakness exceeds the detection limit and/or quenching in the solid state, and the PL spectrum of the HD-PPTV is not obtained. The HD-PPPV is red-emitting, and the PL maxima in the dilute solution and as the film are at 647 and 653 nm, respectively. This HD-PPPV polymer is similar to other DPP-based polymers and is used in dilute solutions. The film has a large Stokes shift of 109 and 116 nm. Similar to HD-PPPV, the random copolymer PPTPV has a weak PL peak centered at 651 nm in a dilute solution, but the photoluminescence is almost completely quenched in the film.

電化學特性使用循環伏安法(CV)來初步地評估HD-PPTV、HD-PPPV以及PPTPV聚合物的電子結構和能級。如圖4a、4b以及4c所示,三種共聚物的還原和氧化掃描圖都顯示了准可逆過程。 Electrochemical Characteristics Cyclic voltammetry (CV) was used to initially evaluate the electronic structure and energy levels of HD-PPTV, HD-PPPV, and PPTPV polymers. As shown in Figures 4a, 4b and 4c, the reduction and oxidation scans of the three copolymers all show a quasi-reversible process.

從該等CV掃描中提取的電子結構和能級被總結在以上的表1中。與HD-PPTV(-5.14 eV)和PPTPV(-5.21 eV)相比,HD-PPPV具有-5.48 eV的一低的HOMO能級。另外,與在HD-PPTV和PPTPV中的-3.34和-3.31 eV相比,HD-PPPV具有-3.13 eV的一高的LUMO能級。因此,HD-PPPV顯示了比HD-PPTV和PPTPV的1.80至1.90 eV更大的2.35 eV的電化學帶隙。PPTPV的HOMO/LUMO能級與HD-PPTV的那些能級相類似,可能因為它們共用了相同的Th-DPP-Th核以及所產生的強的分子間電荷轉移。然而,還原曲線的電流強度比氧化曲線低得多,暗示了它們可以具有傳輸電洞而不是電子的更好的能力。 The electronic structures and energy levels extracted from these CV scans are summarized in Table 1 above. Compared to HD-PPTV (-5.14 eV) and PPTPV (-5.21 eV), HD-PPPV has a low HOMO level of -5.48 eV. In addition, HD-PPPV has a high LUMO level of -3.13 eV compared to -3.34 and -3.31 eV in HD-PPTV and PPTPV. Thus, HD-PPPV shows an electrochemical band gap of 2.35 eV greater than 1.80 to 1.90 eV for HD-PPTV and PPTPV. The HOMO/LUMO levels of PPTPV are similar to those of HD-PPTV, probably because they share the same Th-DPP-Th core and the resulting strong intermolecular charge transfer. However, the current intensity of the reduction curve is much lower than the oxidation curve, suggesting that they can have a better ability to transmit holes than electrons.

基於DPP的聚(亞芳基亞乙烯基)的結晶性。將每種共聚物以10至20 mg/mL溶解在氯仿/氯苯中,並且將該等溶液滴鍍在玻璃基底上。然後將該等膜在60℃的熱板上在空氣中乾燥。三種聚(亞芳基亞乙烯基)HD-PPTV、 HD-PPPV以及PPTPV的可能的結晶性質藉由該等滴鍍膜的X射線衍射(XRD)來考察,如圖5所示。HD-PPTV在4.78°具有一(100)反射峰,對應於18.47 Å的一個d100間距。不希望被理論所束縛,該d100間距被認為對應於在一層狀堆疊結構中的堆積距離,用龐大的2-己基癸基鏈來表示。HD-PPPV沒有這種峰,並且無規共聚物PPTPV僅在4.89°顯示了一弱的反射峰,對應於18.02 Å的一個d100間距,表明PPTPV可能具有與HD-PPTV類似的層狀堆疊結構。對於HD-PPTV的中心在22.67°的寬峰被認為是與HD-PPTV聚合物鏈(3.92 Å)之間的分子間π-π堆積距離相關,並且可以指示在固態中HD-PPTV聚合物的相對高的結晶性質。相比之下,HD-PPPV和HD-PPTV沒有顯示在22°附近的任何類似的反射峰。 Crystallinity of poly(arylenevinylene) based on DPP. Each copolymer was dissolved in chloroform/chlorobenzene at 10 to 20 mg/mL, and the solutions were dropped on a glass substrate. The films were then dried in air on a hot plate at 60 °C. The possible crystalline properties of the three poly(arylene vinylene) HD-PPTV, HD-PPPV and PPTPV are examined by X-ray diffraction (XRD) of the drop coatings, as shown in FIG. The HD-PPTV has a (100) reflection peak at 4.78°, corresponding to a d 100 pitch of 18.47 Å. Without wishing to be bound by theory, the d 100 pitch is considered to correspond to the stacking distance in a layered stack structure, represented by a bulky 2-hexyl fluorenyl chain. HD-PPPV does not have such a peak, and the random copolymer PPTPV shows a weak reflection peak only at 4.89°, corresponding to a d 100 spacing of 18.02 Å, indicating that PPTPV may have a layered stack similar to HD-PPTV. . The broad peak at 22.67° for the center of the HD-PPTV is considered to be related to the intermolecular π-π stacking distance between the HD-PPTV polymer chain (3.92 Å) and can indicate the HD-PPTV polymer in the solid state. Relatively high crystalline properties. In contrast, HD-PPPV and HD-PPTV did not show any similar reflection peaks around 22°.

實例5-場效應電晶體的製造與表徵 Example 5 - Fabrication and Characterization of Field Effect Transistors

將包含HD-PPTV、HD-PPPV以及PPTPV聚合物作為有源半導體層的場效應電晶體製造在具有熱生長的二氧化矽柵極絕緣體(200 nm)的重摻雜的矽基材上。有鉻膠粘層(2 nm)的金電極(40 nm)在底接觸/底柵極電晶體中作為源極電極和汲極電極,從而形成400至800 μm的溝道寬度(W)以及20至40 μm的溝道長度(L)(W/L=20)。將該等基底藉由使用丙酮和異丙醇進行超聲清洗,並且藉由氮氣流乾燥。二氧化矽基底的表面使用辛基三氯矽烷(OTS-8)處理以便形成一種疏水的自組裝單分子層 。將聚合物的1,2-二氯苯(ODCB)溶液藉由旋塗而沉積在基底上。將該等裝置在一充滿氮氣的乾燥箱中在不同的溫度下退火。在氮氣氛圍下藉由使用HP4145B半導體參數分析器測量該等裝置的電特性。 A field effect transistor comprising HD-PPTV, HD-PPPV, and PPTPV polymer as active semiconductor layers was fabricated on a heavily doped germanium substrate having a thermally grown ceria gate insulator (200 nm). A gold electrode (40 nm) with a chrome-adhesive layer (2 nm) acts as a source and drain electrode in the bottom contact/bottom gate transistor, resulting in a channel width (W) of 400 to 800 μm and 20 Channel length (L) up to 40 μm (W/L=20). The substrates were ultrasonically cleaned using acetone and isopropanol and dried by a stream of nitrogen. The surface of the ceria substrate is treated with octyltrichloromethane (OTS-8) to form a hydrophobic self-assembled monolayer . A solution of the polymer 1,2-dichlorobenzene (ODCB) was deposited on the substrate by spin coating. The devices were annealed at different temperatures in a nitrogen-filled dry box. The electrical characteristics of the devices were measured under a nitrogen atmosphere by using a HP4145B semiconductor parameter analyzer.

圖6a和6b示出了基於HD-PPTV、HD-PPPV以及PPTPV作為聚合物半導體的OFETs的代表性的電流-電壓特徵。圖6b示出了包含HD-PPTV、HD-PPPV以及PPTPV的電晶體的代表性轉移曲線(Vds=±80 V)的疊加圖。使用HD-PPTV(圖6a)的電晶體顯示了具有典型的雙極特點的電洞和電子電荷傳輸,如在所施加電壓的正極性和負極性上所觀察到的電流調製和飽和。該等電荷載體的遷移率係從轉移曲線使用金屬氧化物半導體場效應電晶體的標準飽和方程來計算的,即:I ds =(μWC o /2L)(V g -V t )2。得到了高達0.20 cm2 V-1 s-1的電洞遷移率,以及高達0.03 cm2 V-1 s-1的電子遷移率。該等提取的電參數被收集在表2中。 Figures 6a and 6b show representative current-voltage characteristics of OFETs based on HD-PPTV, HD-PPPV, and PPTPV as polymer semiconductors. Figure 6b shows an overlay of a representative transfer curve ( Vds = ± 80 V) for a transistor comprising HD-PPTV, HD-PPPV, and PPTPV. A transistor using HD-PPTV (Fig. 6a) shows holes and electronic charge transport with typical bipolar characteristics, such as current modulation and saturation observed on the positive and negative polarities of the applied voltage. The mobility of the charge carriers is calculated from the transfer curve using the standard saturation equation of the metal oxide semiconductor field effect transistor, i.e., I ds = ( μWC o /2L ) ( V g - V t ) 2 . The hole mobility of up to 0.20 cm 2 V -1 s -1 and the electron mobility of up to 0.03 cm 2 V -1 s -1 were obtained. The extracted electrical parameters are collected in Table 2.

由包含HD-PPTV的示例性電晶體測得的平均電洞遷移率係在0.091至0.17 cm2 V-1 s-1的窄範圍內,並且平均電子遷移率係0.012至0.019 cm2 V-1 s-1,而電流開關比係102至103The average hole mobility measured by an exemplary transistor including HD-PPTV is in a narrow range of 0.091 to 0.17 cm 2 V -1 s -1 , and the average electron mobility is 0.012 to 0.019 cm 2 V -1 . s -1 and the current switching ratio is 10 2 to 10 3 .

電洞和電子傳輸的閾值電壓對於p型溝道操作係-9.0至-1.6 V,並且對於n型溝道模式係22.7至32.1 V。 The threshold voltage for the hole and electron transfer is -9.0 to -1.6 V for the p-channel operating system and 22.7 to 32.1 V for the n-channel mode.

在HD-PPPV的情況下,得到了4.9×10-7 cm2 V-1 s-1的一低的電洞遷移率而沒有電子傳輸,這係可以理解的,因為HD-PPPV具有2.0 eV的大的帶隙且有一高的LUMO能級,從而導致了對於來自金電極的電子的大的注入阻擋。在110℃至200℃退火後,PPTPV具有一折中的OFET性能,其電洞和電子遷移率分別是3.9×10-4至2.2×10-3cm2 V-1 s-1和2.9×10-6至2.3×10-5 cm2 V-1 s-1。在 150℃退火後觀察到了PPTPV有機場效應電晶體中的最高的平均遷移率(表2)。 In the case of HD-PPPV, a low hole mobility of 4.9 × 10 -7 cm 2 V -1 s -1 was obtained without electron transport, which is understandable because HD-PPPV has 2.0 eV A large band gap and a high LUMO energy level result in a large injection barrier to electrons from the gold electrode. After annealing at 110 ° C to 200 ° C, PPTPV has a compromise OFET performance with a hole and electron mobility of 3.9 × 10 -4 to 2.2 × 10 -3 cm 2 V -1 s -1 and 2.9 × 10, respectively. -6 to 2.3 × 10 -5 cm 2 V -1 s -1 . The highest average mobility in PPTPV organic field effect transistors was observed after annealing at 150 °C (Table 2).

在HD-PPTV電晶體中的電洞遷移率比電子遷移率高約一數量級,這可能起因于對於來自金電極的電子的更大的注入阻擋。該等遷移率(0.012至0.17 cm2 V-1 s-1)可比於為基於一個單一共軛聚合物半導體的雙極性電晶體所報導的值(0.01至0.65 cm2 V-1 s-1),並且高於從具有類似的底接觸且底柵極幾何形狀的雙極性電晶體獲得的報導值(0.01-0.05 cm2 V-1 s-1),見Bürgi,L.;Turbiez,M.;Pfeiffer,R.;Bienewald,F.;Kirner,H.-J.;Winnewisser,C.先進材料(Adv.Mater.)2008,20,2217;Bijleveld,J.C.;Zoombelt,A.P.;Mathijssen,S.G.J.;Wienk,M.M.;Turbiez,M.;de Leeuw,D.M.;Janssen,R.A.J.美國化學會志(J.Am.Chem.Soc.)2009,131,16616;Tsai,J.-H.;Lee,W.-Y.;Chen,W.-C.;Yu,C.-Y.;Hwang,G.-H.;Ting,C.材料化學(Chem.Mater.)2010,22,3290;Sonar,P.;Singh,S.P.;Li,Y.;Soh,M.S.;Dodabalapur,A.先進材料(Adv.Mater.)2010,22,5409.;以及Ashraf,R.S.;Chen,Z.;Leem,D.S.;Bronstein,H.;Zhang,W.;Schroeder,B.;Geerts,Y.;Smith,J.;Watkins,S.;Anthopoulos,T.W.;Sirringhaus,H.;de Mello,J.C.;Heeney,M.;McCulloch,I.材料化學(Chem.Mater.)2011,23,768。 The hole mobility in HD-PPTV transistors is about an order of magnitude higher than the electron mobility, which may result from a larger injection barrier to electrons from the gold electrode. The mobility (0.012 to 0.17 cm 2 V -1 s -1 ) is comparable to that reported for a bipolar transistor based on a single conjugated polymer semiconductor (0.01 to 0.65 cm 2 V -1 s -1 ) And higher than the reported value (0.01-0.05 cm 2 V -1 s -1 ) obtained from a bipolar transistor with a similar bottom contact and bottom gate geometry, see B ü rgi, L.; Turbiez, M Pfeiffer, R.; Bienewald, F.; Kirner, H.-J.; Winnewisser, C. Advanced Materials (Adv. Mater.) 2008, 20 , 2217; Bijleveld, JC; Zoombelt, AP; Mathijssen, SGJ; Wienk, MM; Turbiez, M.; de Leeuw, DM; Janssen, RAJ J. Am. Chem. Soc. 2009, 131 , 16616; Tsai, J.-H.; Lee, W.- Y.; Chen, W.-C.; Yu, C.-Y.; Hwang, G.-H.; Ting, C. Materials Chemistry (Chem. Mater.) 2010, 22 , 3290; Sonar, P.; Singh, SP; Li, Y.; Soh, MS; Dodabalapur, A. Advanced Materials (Adv. Mater.) 2010, 22 , 5409.; and Ashraf, RS; Chen, Z.; Leem, DS; Bronstein, H. ;Zhang,W.;Schroeder,B.;Geerts,Y.;Smith,J.;Watkins,S.;Anthopoulos,TW;Sirringhaus,H.;de Mello,JC;Heeney,M.;McCulloch,I. Chemistry (Chem.Mater.) 2011, 23 , 768.

實例6-包含逆變器以及反及以及反或電路的裝置的製造與表徵 Example 6 - Fabrication and Characterization of Devices Containing Inverters and Reversing and Reverse Circuits

鑒於HD-PPTV的雙極特點,藉由集成兩個或四個電晶體,成功地製造並且展示了一種互補逆變器以及電路。圖8、圖9以及圖10示出了包含邏輯電路的裝置,該等邏輯電路包含多個電晶體,該等電晶體包含HD-PPTV作為有源雙極性半導體。具有圖7所示結構的互補逆變器被製造在具有大溝道尺寸(W=5000 μm並且L=100 μm)的一基底上。在圖7中還示出了該等逆變器裝置的電特性。基於雙極性HD-PPTV電晶體的逆變器的互補性質導致了邏輯運算的尖銳的開關特性,其電壓增益(-dVout/dVin)為15至27。 In view of the bipolar nature of HD-PPTV, a complementary inverter and circuit were successfully fabricated and demonstrated by integrating two or four transistors. 8, 9, and 10 illustrate apparatus including logic circuits including a plurality of transistors including HD-PPTV as active bipolar semiconductors. A complementary inverter having the structure shown in Fig. 7 was fabricated on a substrate having a large channel size (W = 5000 μm and L = 100 μm). The electrical characteristics of the inverter devices are also shown in FIG. The complementary nature of the inverter based on bipolar HD-PPTV transistors results in a sharp switching characteristic of the logic operation with a voltage gain (-dV out /dV in ) of 15 to 27.

在圖8中示出了用於制造反及邏輯電路的包含HD-PPTV的裝置以及所得的電特性。當輸入信號在接通狀態(高電壓)與斷開狀態(低電壓)之間切換時,輸出電壓根據反及邏輯運算進行切換。如果輸入信號都處在接通狀態,反及電路的輸出信號係斷開狀態;否則,輸出係接通狀態。 An apparatus comprising an HD-PPTV for fabricating an inverse logic circuit and the resulting electrical characteristics are shown in FIG. When the input signal is switched between the on state (high voltage) and the off state (low voltage), the output voltage is switched according to the inverse logical operation. If the input signal is in the on state, the output signal of the circuit is disconnected; otherwise, the output is in the on state.

在圖9中示出了用於制造反或邏輯電路的包含HD-PPTV的裝置以及所得的電特性。當輸入信號在接通狀態與斷開狀態之間切換時,輸出電壓根據反或邏輯運算進行切換。如果輸入信號都處在斷開狀態,反或電路的輸出信號係接通狀態;否則,輸出係斷開狀態。 An apparatus comprising an HD-PPTV for fabricating an inverse or logic circuit and the resulting electrical characteristics are shown in FIG. When the input signal is switched between an on state and an off state, the output voltage is switched according to an inverse OR logic operation. If the input signal is in the off state, the output signal of the inverse or circuit is turned on; otherwise, the output is off.

因為反及以及反或電路的構成電晶體係完全相同的, 藉由交換電源和接地的電壓偏差,一種電路的功能可以從反及閘切換成反或閘或者從反或閘切換成反及閘。 Because the opposite and the reverse circuit constitute the same crystal system, By exchanging the voltage deviation of the power supply and ground, the function of a circuit can be switched from an anti-gate to an anti-gate or from an anti-gate to an anti-gate.

優先權文件所提出申請專利範圍的實施方式 Implementation of the scope of the patent application filed in the priority document

在2011年8月19日提交的優先權美國臨時專利申請61/525,618的34項申請專利範圍被提供在下文作為34個實施方式並且也藉由引用結合在此。 The scope of the 34 patent applications of the priority US Provisional Patent Application No. 61/525,618, filed on Aug. 19, 2011, is hereby incorporated by reference.

第一實施方式(即實施方式1)提供了包含多個重複單元的二酮基吡咯並吡咯聚合物,其中大於50莫耳%、高達100莫耳%的重複單元係具有符合結構通式(I)的一或多個結構式的重複單元RU,即: The first embodiment (ie, embodiment 1) provides a diketopyrrolopyrrole polymer comprising a plurality of repeating units, wherein greater than 50 mol%, up to 100 mol% of repeating units have conformational formulas (I a repeating unit RU of one or more structural formulas, namely:

其中a)每個R1和R1’獨立地選自C1-C30正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物;b)每個hAr1和hAr1’獨立地選自C1-C60雜芳基,該等雜芳基具有以下結構: Wherein a) each R 1 and R 1 ' is independently selected from a C 1 -C 30 positive-chain, branched or cyclic alkyl group or a fluorinated derivative thereof; b) each hAr 1 and hAr 1' is independently selected from C 1 -C 60 heteroaryl groups, which have the following structure:

其中i)a係等於1、2、3或4的整數;ii)每個X、X’、X”或X'''獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一C1-C30正鏈的、支鏈的或環狀的烷基;iii)每個Y、Y’、Y”以及Y”’獨立地選自N以及CR4,其中R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;並且c)每個R2和R2’獨立地選自氫、氰基或C1-C30烷基、氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基。 Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X''' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 , and NR 3 , wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; iii) each Y, Y', Y" and Y"' are independently selected from N and CR 4 Wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy And c) each R 2 and R 2 ' are independently selected from hydrogen, cyano or C 1 -C 30 alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl, carboxyalkyl or Alkoxy.

第二個實施方式係根據實施方式1之二酮基吡咯並吡咯聚合物,其中大於50莫耳%、高達100莫耳%的重複單元係具有符合結構通式(I)的一個並且唯一一個特定結 構式的重複單元RU。 A second embodiment is the keto-pyrrolopyrrole polymer according to embodiment 1, wherein more than 50 mol%, up to 100 mol% of repeat units have one and only one specificity in accordance with structural formula (I) Knot The repeating unit RU of the configuration.

第三個實施方式係根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,該等聚合物係均聚物。 A third embodiment is a diketopyrrolopyrrole polymer according to one or more other embodiments, the polymers being homopolymers.

第四個實施方式係根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,其中大於50莫耳%,高達小於100莫耳%的重複單元係具有符合結構通式(I)的一個並且唯一一個特定結構式的重複單元RU,並且介於0莫耳%與50莫耳%之間的重複單元係具有不符合結構通式(I)的一或多個特定結構式的重複單元RU*。 A fourth embodiment is a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein greater than 50 mol%, up to less than 100 mol% of repeat units have conformation to formula (I) One and only one repeating unit RU of a specific structural formula, and the repeating unit between 0% by mole and 50% by mole has repeating units that do not conform to one or more specific structural formulas of the structural formula (I) RU*.

第五個實施方式係根據實施方式1之二酮基吡咯並吡咯聚合物,其中大於50莫耳%、高達100莫耳%的重複單元係具有符合結構通式(I)的至少兩種不同的特定結構式的重複單元RU。 A fifth embodiment is the keto-pyrrolopyrrole polymer according to embodiment 1, wherein more than 50 mol%, up to 100 mol% of the repeat unit has at least two differentities in conformity with the structural formula (I) A repeating unit RU of a specific structural formula.

第六個實施方式係根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,其中重複單元RU係一種混合,該混合由以下各項組成:具有特定結構式(II)的重複單元RU1 A sixth embodiment is a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein the repeating unit RU is a mixture consisting of repeating units having the specific structural formula (II) RU1

以及具有特定結構式(III)的重複單元RU2 And a repeating unit RU2 having a specific structural formula (III)

其中,每個R11、R11’、R21以及R21’獨立地選自C1-C30正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物;a)每個hAr11、hAr11’、hAr21以及hAr21’獨立地選自C1-C60雜芳基,該等雜芳基具有以下結構: Wherein each of R 11 , R 11 ' , R 21 and R 21 ' is independently selected from a C 1 -C 30 positive-chain, branched or cyclic alkyl group or a fluorinated derivative thereof; a) Each of hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' is independently selected from a C 1 -C 60 heteroaryl group having the following structure:

其中i)a係等於1、2、3或4的整數;ii)每個X、X’、X”或X'''獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一個C1-C30正鏈的、支鏈的或環狀的烷基;iii)每個Y、Y’、Y”以及Y'''獨立地選自N以及 CR4,其中R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;b)每個R12、R12’、R22以及R22’獨立地選自氫、氰基或C1-C30烷基、氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基,其條件係包含在化學式(II)中的基團R11、R11’、hAr11以及hAr11’中的至少一個不同於包含在化學式(III)中的它的同系物,分別是R21、R21’、hAr21以及hAr21’Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X''' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 , and NR 3 , wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; iii) each Y, Y', Y" and Y''' are independently selected from N and CR 4 wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkane Alkoxy; b) each R 12 , R 12 ' , R 22 and R 22 ' are independently selected from hydrogen, cyano or C 1 -C 30 alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl a group, a carboxyalkyl group or an ethoxylated group, the conditions of which are at least one of the groups R 11 , R 11 ' , hAr 11 and hAr 11 ' contained in the formula (II) are different from those contained in the formula (III) Its homologues are R 21 , R 21 ' , hAr 21 and hAr 21 ', respectively .

第七個實施方式係根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,該等聚合物係嵌段共聚物,其中R11和R21係彼此不同的和/或R11’和R21’係彼此不同的。 A seventh embodiment is a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein the polymer is a block copolymer, wherein R 11 and R 21 are different from each other and/or R 11 ' And R 21 ' are different from each other.

第八個實施方式係根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,該等聚合物係無規共聚物,其中R11和R11’係彼此完全相同的並且R21和R21’係彼此完全相同的。 The eighth embodiment is a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein the polymer is a random copolymer in which R 11 and R 11 ' are identical to each other and R 21 and R 21 ' are identical to each other.

第九個實施方式係根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,該等聚合物係共聚物,其中所有的重複單元係重複單元RU,所述重複單元RU係一種混合,該混合由以下各項組成:具有特定化學式(II)的重複單元RU1以及具有特定化學式(III)的重複單元RU2。 A ninth embodiment is a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein the repeating unit is a repeating unit RU, and the repeating unit RU is a mixture The mixture consists of a repeating unit RU1 having a specific chemical formula (II) and a repeating unit RU2 having a specific chemical formula (III).

在第十個實施方式中,提供了根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,其中大於50莫耳%, 高達小於100莫耳%的重複單元係由具有特定結構式(II)的重複單元RU1和具有特定結構式(III)的重複單元RU2組成的重複單元RU,並且介於0莫耳%與50莫耳%之間的重複單元係具有不符合結構通式(I)的一或多個結構式的重複單元RU*。 In a tenth embodiment, there is provided a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein greater than 50% by mole, Up to less than 100% by mole of the repeating unit is a repeating unit RU consisting of a repeating unit RU1 having a specific structural formula (II) and a repeating unit RU2 having a specific structural formula (III), and is between 0% and 50% The repeating unit between the ear % has a repeating unit RU* that does not conform to one or more structural formulas of the structural formula (I).

第十一個實施方式提供了根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,其中重複單元RU1和RU2的莫耳比(RU1:RU2)在5%至95%的範圍內。 An eleventh embodiment provides a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein the molar ratios (RU1:RU2) of the repeating units RU1 and RU2 are in the range of 5% to 95% .

第十二個實施方式提供了根據以上實施方式中的任一個之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: 其中R3係一個C1-C30正鏈的、支鏈的或環狀的烷基,R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀 的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 A twelfth embodiment provides the diketopyrrolopyrrole polymer according to any one of the above embodiments, wherein each of hAr 1 and hAr 1 ' is independently selected from: Wherein R 3 is a C 1 -C 30 normal chain, branched or cyclic alkyl group, and R 4 is hydrogen, halogen, cyano or a C 1 -C 30 positive chain, branched or cyclic Alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy.

第十三個實施方式提供了根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: A thirteenth embodiment provides a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein each hAr 1 and hAr 1 ' is independently selected from:

在第十四個實施方式中,提供了根據一或多個在先實施方式之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: In a fourteenth embodiment, there is provided a diketopyrrolopyrrole polymer according to one or more prior embodiments, wherein each hAr 1 and hAr 1 ' is independently selected from:

在第十五個實施方式中,提供了根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: In a fifteenth embodiment, there is provided a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein each hAr 1 and hAr 1 ' is independently selected from:

第十六個實施方式係根據一或多個其他實施方式之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: A sixteenth embodiment is a diketopyrrolopyrrole polymer according to one or more other embodiments, wherein each hAr 1 and hAr 1 ' is independently selected from:

在第十七個實施方式中,如申請專利範圍第12項之 二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: In a seventeenth embodiment, the ketopyrrolopyrrole polymer of claim 12, wherein each of hAr 1 and hAr 1' is independently selected from:

第十八個實施方式係根據一或多個在先實施方式之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: The eighteenth embodiment is a diketopyrrolopyrrole polymer according to one or more of the preceding embodiments, wherein each of hAr 1 and hAr 1 ' is independently selected from:

在第十九個實施方式中,根據一或多個在先實施方式之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: In a nineteenth embodiment, the diketopyrrolopyrrole polymer according to one or more of the preceding embodiments, wherein each of hAr 1 and hAr 1 ' is independently selected from:

第二十個實施方式係根據一或多個在先實施方式之二酮基吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: A twentieth embodiment is a diketopyrrolopyrrole polymer according to one or more prior embodiments, wherein each hAr 1 and hAr 1 ' is independently selected from:

第二十一個實施方式係根據其他實施方式的任一個之二酮基吡咯並吡咯聚合物,其中每個hAr11和hAr11’獨立地選自: The twenty-first embodiment is the diketopyrrolopyrrole polymer according to any one of the other embodiments, wherein each of hAr 11 and hAr 11' is independently selected from:

並且並且-每個hAr21和hAr21’獨立地選自: And - each hAr 21 and hAr 21' are independently selected from:

第二十二個實施方式係根據其他實施方式的任一個之二酮基吡咯並吡咯聚合物,其中介於0莫耳%與50莫耳%之間的重複單元係具有以下通式中的一或多個的重複單元RU*,即: A twenty-second embodiment is the diketopyrrolopyrrole polymer according to any one of the other embodiments, wherein the repeat unit between 0 mol% and 50 mol% has one of the following formulas Or multiple repeating units RU*, namely:

第二十三個實施方式提供了以上實施方式中的任一個之二酮基吡咯並吡咯聚合物,該等聚合物具有的藉由凝膠滲透層析使用聚苯乙烯校準標準品所確定的數均聚合度至少為10。 A twenty-third embodiment provides the diketopyrrolopyrrole polymer of any of the above embodiments, the polymers having a number determined by gel permeation chromatography using polystyrene calibration standards The degree of homopolymerization is at least 10.

在第二十四個實施方式中,提供了以上實施方式中的任一個之二酮基吡咯並吡咯聚合物,該等聚合物具有的藉由凝膠滲透層析使用聚苯乙烯校準標準品所確定的數均聚合度至多為100。 In a twenty-fourth embodiment, there is provided a diketopyrrolopyrrole polymer of any of the above embodiments, wherein the polymer has a polystyrene calibration standard by gel permeation chromatography The determined number average degree of polymerization is at most 100.

在第二十五個實施方式中,提供了根據以上實施方式中的任一個之二酮基吡咯並吡咯聚合物,該等聚合物在至少一種溶劑中在25℃至50℃範圍內選擇的一或多個溫度下具有至少10 mg/ml的溶解度,該溶劑選自以下組,該組由以下各項組成:甲苯、二甲苯、均三甲苯、四氫呋喃、氯仿、氯苯、二氯苯以及它們的混合物。 In a twenty-fifth embodiment, there is provided a diketopyrrolopyrrole polymer according to any one of the above embodiments, wherein the polymer is selected in the range of 25 ° C to 50 ° C in at least one solvent Or a solubility of at least 10 mg/ml at a plurality of temperatures selected from the group consisting of toluene, xylene, mesitylene, tetrahydrofuran, chloroform, chlorobenzene, dichlorobenzene, and mixture.

在實施方式二十六中,提供了一種電子裝置,該電子裝置包括至少一種聚合物,該聚合物選自根據以上實施方式中的任一個之二酮基吡咯並吡咯聚合物。 In embodiment twenty-six, an electronic device is provided, the electronic device comprising at least one polymer selected from the group consisting of diketopyrrolopyrrole polymers according to any of the above embodiments.

在第二十七個實施方式中,如在先實施方式中的任一個之電子裝置,該電子裝置包括包含有該至少一種聚合物的至少一個光電池或至少一個電晶體。 In a twenty-seventh embodiment, the electronic device of any one of the preceding embodiments, the electronic device comprising at least one photovoltaic cell or at least one transistor comprising the at least one polymer.

在第二十八個實施方式中,該電子裝置包括至少一個電晶體,該電晶體包含該至少一種聚合物。 In a twenty-eighth embodiment, the electronic device includes at least one transistor comprising the at least one polymer.

在第二十九個實施方式中,提供了一種用於製造在先實施方式中的任一個或多個之聚合物的方法,該方法包括 以下步驟:a)獲得或提供至少一種二雜芳基取代的二酮基吡咯並吡咯單體,該單體具有以下結構: In a twenty-ninth embodiment, there is provided a method for making a polymer of any one or more of the preceding embodiments, the method comprising the steps of: a) obtaining or providing at least one diheteroaryl group a substituted diketopyrrolopyrrole monomer having the following structure:

其中LG1係一離去基團,例如溴原子; Wherein LG 1 is a leaving group such as a bromine atom;

b)獲得或提供至少一種二離去基團取代的乙烯單體,該單體具有以下結構:其中LG2係一離去基團,該離去基團能夠藉由與LG1(例如SnR2” 3,其中R2”係烷基或芳基)反應而被消除;c)在一種過渡金屬催化劑錯合物的存在下,使包含該至少一種第一個二雜芳基取代的二酮基吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體的一種混合物發生反應,以便產生在此說明的實施方式中的任一個或多個之共聚物。 b) obtaining or providing at least one di-substituent-substituted ethylene monomer having a structure wherein LG 2 is a leaving group capable of acting with LG 1 (for example, SnR 2 " 3 , wherein R 2" is alkyl or aryl) is eliminated by reaction; c) in the presence of a transition metal catalyst complex, a diketone group comprising the at least one first diheteroaryl group is substituted A mixture of pyrrolopyrrole monomers and the at least one di-removing group-substituted ethylene monomer is reacted to produce a copolymer of any one or more of the embodiments described herein.

在第三十個實施方式中,提供了根據一或多個其他實施方式之方法,其中該混合物包含基本上等莫耳量的該至少一種第一個二雜芳基取代的二酮基吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體。 In a thirtieth embodiment, there is provided a method according to one or more other embodiments, wherein the mixture comprises substantially equal molar amount of the at least one first diheteroaryl substituted diketopyrrole A pyrrole monomer and the at least one di-substituent-substituted ethylene monomer.

在第三十一個實施方式中,提供了根據一或多個其他實施方式之方法,其中該混合物基本上不含除該至少一種第一個二雜芳基取代的二酮基吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體以外的任何單體。 In a thirtieth embodiment, there is provided a method according to one or more other embodiments, wherein the mixture is substantially free of diketopyrrolopyrrole substituted with the at least one first diheteroaryl group Any monomer other than the vinyl monomer substituted with the at least one di- leaving group.

在第三十二個實施方式中,提供了根據一或多個其他實施方式之方法,其中該聚合物進一步包含至少一種自反應性單體,該單體具有以下結構:LG1-hAr*-LG2 In a thirty-second embodiment, there is provided a method according to one or more other embodiments, wherein the polymer further comprises at least one self-reactive monomer having the structure: LG 1 -hAr*- LG 2

其中hAr*選自C1-C60雜芳基,該等雜芳基具有以下結構: 並且a、LG1、LG2、X、X’、X”、X”’、Y、Y’、Y”以及Y”’如在以上實施方式中所定義。 Wherein hAr* is selected from C 1 -C 60 heteroaryl groups, and the heteroaryl groups have the following structure: And a, LG 1 , LG 2 , X, X', X", X"', Y, Y', Y", and Y"' are as defined in the above embodiments.

在第三十三個實施方式中,提供了根據一或多個其他實施方式之方法,其中該混合物進一步包含至少一種自反應性單體,該單體具有以下結構: LG1-hAr*-LG1 In a thirtieth embodiment, there is provided a method according to one or more other embodiments, wherein the mixture further comprises at least one self-reactive monomer having the structure: LG 1 -hAr*-LG 1

其中hAr*選自C1-C60雜芳基,該等雜芳基具有以下結構: 並且a、LG1、X、X’、X”、X”’、Y、Y’、Y”以及Y”’如在相關的以上申請專利範圍中所定義。 Wherein hAr* is selected from C 1 -C 60 heteroaryl groups, and the heteroaryl groups have the following structure: And a, LG 1 , X, X', X", X"', Y, Y', Y", and Y"' are as defined in the related above patent application.

在第三十四個實施方式中,提供了一種用於製造其他實施方式中的一或多個之無規共聚物的方法,該方法包括以下步驟:a)獲得或提供至少一種第一個二雜芳基取代的二酮基吡咯並吡咯單體,該單體具有以下結構: In a thirty-fourth embodiment, there is provided a method for making a random copolymer of one or more of the other embodiments, the method comprising the steps of: a) obtaining or providing at least one first two a heteroaryl-substituted diketopyrrolopyrrole monomer having the following structure:

其中LG1係一離去基團,例如溴原子; b)獲得或提供至少一種第二個二雜芳基取代的二酮基吡咯並吡咯單體,該單體具有以下結構: Wherein LG 1 is a leaving group such as a bromine atom; b) obtaining or providing at least one second diheteroaryl substituted diketopyrrolopyrrole monomer having the following structure:

c)獲得或提供至少一種二離去基團取代的乙烯單體,該單體具有以下結構: c) obtaining or providing at least one di-group-substituted vinyl monomer having the following structure:

其中LG2係一離去基團,該離去基團能夠藉由與LG1(例如SnR2” 3,其中R2”係烷基或芳基)反應而被消除;d)在一種過渡金屬催化劑錯合物的存在下,使包含該至少第一個以及第二個二雜芳基取代的二酮基吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體的一種混合物發生反應,以便產生其他實施方式中的一或多個之共聚物。 Wherein LG 2 is a leaving group capable of being eliminated by reaction with LG 1 (eg, SnR 2′ 3 , wherein R 2′′ is an alkyl or aryl group); d) in a transition metal a mixture comprising the at least first and second diheteroaryl substituted diketopyrrolopyrrole monomers and the at least one dipartition group substituted ethylene monomer in the presence of a catalyst complex The reaction takes place to produce a copolymer of one or more of the other embodiments.

結論 in conclusion

以上說明、實例以及數據提供了本發明的不同的組合物以及裝置的製造和用途、以及用於它們的製造和使用的方法的示例性的說明。鑒於那些揭露,本領域的普通技術人員將能夠想像在此揭露的和提出申請專利範圍的本發明 的許多另外的實施方式是明顯的,並且它們可以被作出而無需脫離本發明的精神和範圍。以下所附的該等申請專利範圍定義了那些實施方式中的一些。 The above description, examples and data provide exemplary illustrations of the different compositions and apparatus of the invention, as well as the manufacture and use of the apparatus, and methods for their manufacture and use. In view of those disclosures, one of ordinary skill in the art will be able to devise the invention as disclosed and claimed herein. Many additional embodiments are apparent, and they can be made without departing from the spirit and scope of the invention. The scope of these patent applications attached below defines some of those embodiments.

圖1示出了在實例4說明的HD-PPTV、HD-PPV以及PPTPV聚合物的差示掃描熱量儀以10℃/min的加熱速率在N2下的掃描圖。 1 shows a scanning chart of a differential scanning calorimeter of HD-PPTV, HD-PPV, and PPTPV polymers illustrated in Example 4 at a heating rate of 10 ° C/min under N 2 .

圖2a示出了HD-PPTV、HD-PPPV以及PPTPV聚合物在稀甲苯溶液中的光學吸收光譜。圖2b示出了HD-PPTV、HD-PPPV以及PPTPV作為聚合物薄膜的光學吸收光譜。 Figure 2a shows the optical absorption spectra of HD-PPTV, HD-PPPV and PPTPV polymers in dilute toluene solution. Figure 2b shows the optical absorption spectra of HD-PPTV, HD-PPPV and PPTPV as polymer films.

圖3a示出了HD-PPPV在稀甲苯溶液以及作為薄膜的光學吸收光譜。圖3b示出了PPTPV聚合物在稀甲苯溶液中以及作為薄膜的光學吸收光譜。 Figure 3a shows the optical absorption spectrum of HD-PPPV in a dilute toluene solution and as a film. Figure 3b shows the optical absorption spectrum of a PPTPV polymer in a dilute toluene solution and as a film.

圖4a、4b以及4c示出了HD-PPTV(A)、HD-PPPV(B)、以及PPTPV(C)的循環伏安圖。 Figures 4a, 4b and 4c show cyclic voltammograms of HD-PPTV (A), HD-PPPV (B), and PPTPV (C).

圖5示出了HD-PPTV、HD-PPPV、以及PPTPV三種聚合物的滴鍍(drop-cast)膜的X射線衍射圖。 Figure 5 shows an X-ray diffraction pattern of drop-cast films of three polymers of HD-PPTV, HD-PPPV, and PPTPV.

圖6a示出了基於HD-PPTV的場效應電晶體在150℃退火後的輸出特徵。圖6b示出了包含HD-PPTV、HD-PPPV、以及PPTPV的電晶體的代表性轉移曲線(Vds=±80 V)的疊加圖。參見實例5。 Figure 6a shows the output characteristics of an HD-PPTV based field effect transistor after annealing at 150 °C. Figure 6b shows an overlay of a representative transfer curve ( Vds = ± 80 V) for a transistor comprising HD-PPTV, HD-PPPV, and PPTPV. See example 5.

圖7示出了從使用HD-PPTV作為有源雙極性半導體 所製造的逆變器電路獲得的結構和結果。 Figure 7 shows the use of HD-PPTV as an active bipolar semiconductor The structure and results obtained by the manufactured inverter circuit.

圖8示出了從使用HD-PPTV作為有源雙極性半導體所製造的反及電路獲得的結構和結果。 Figure 8 shows the structure and results obtained from the reverse circuit fabricated using HD-PPTV as an active bipolar semiconductor.

圖9示出了從使用HD-PPTV作為有源雙極性半導體所製造的反或電路獲得的結構和結果。 Figure 9 shows the structure and results obtained from an inverse OR circuit fabricated using HD-PPTV as an active bipolar semiconductor.

Claims (18)

包含多個重複單元的二酮吡咯並吡咯聚合物,其中大於50 mol.%、高達100 mol.%的該等重複單元係具有符合結構通式(I)的一或多個結構式的重複單元RU, 其中a)每個R1和R1’獨立地選自C1-C30正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物;b)每個hAr1和hAr1’獨立地選自C1-C60雜芳基,該等雜芳基具有以下結構: 其中i)a係等於1、2、3或4的整數; ii)每個X、X’、X”或X”’獨立地選自O、S、Se、Si(R3)2、以及NR3,其中R3係一個C1-C30正鏈的、支鏈的或環狀的烷基;iii)每個Y、Y’、Y”以及Y”’獨立地選自N以及CR4,其中R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;並且c)每個R2和R2’獨立地選自氫、氰基或C1-C30烷基、氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基。 a diketopyrrolopyrrole polymer comprising a plurality of repeating units, wherein more than 50 mol.%, up to 100 mol.% of the repeating unit units have repeating units conforming to one or more structural formulas of the structural formula (I) RU, Wherein a) each R 1 and R 1 ' is independently selected from a C 1 -C 30 positive-chain, branched or cyclic alkyl group or a fluorinated derivative thereof; b) each hAr 1 and hAr 1' is independently selected from C 1 -C 60 heteroaryl groups, which have the following structure: Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X"' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 , and NR 3 wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; iii) each Y, Y', Y" and Y"' are independently selected from N and CR 4 , Wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy group And c) each R 2 and R 2 ' are independently selected from hydrogen, cyano or C 1 -C 30 alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl, carboxyalkyl or acetamidine Oxygen. 如申請專利範圍第1項之二酮吡咯並吡咯聚合物,其中大於50 mol.%、高達100 mol.%的該等重複單元係具有符合結構通式(I)的一個並且唯一一個特定結構式的重複單元RU。 The ketopyrrolopyrrole polymer of claim 1, wherein more than 50 mol.%, up to 100 mol.% of the repeat units have one and only one specific structural formula conforming to the structural formula (I) Repeat unit RU. 如申請專利範圍第1至2項之二酮吡咯並吡咯聚合物,該等聚合物係均聚物。 Such as the ketopyrrolopyrrole polymers of claims 1 to 2, which are homopolymers. 如申請專利範圍第2項之二酮吡咯並吡咯聚合物,其中大於50 mol.%、高達小於100 mol.%的該等重複單元係具有符合結構通式(I)的一個並且唯一一個特定結構式的重複單元RU,並且介於0 mol.%與50 mol.%之間的該等重複單元係具有不符合結構通式(I)的一或多個特定結構式的重複單元RU*。 The ketopyrrolopyrrole polymer of claim 2, wherein more than 50 mol.%, up to less than 100 mol.% of the repeat units have one and only one specific structure conforming to the structural formula (I) The repeating unit RU of the formula, and between 0 mol.% and 50 mol.% of the repeating units have repeating units RU* which do not conform to one or more specific structural formulas of the structural formula (I). 如申請專利範圍第1項之二酮吡咯並吡咯聚合物,其中該等重複單元RU係一種混合,該混合由以下各項 組成:具有特定結構式(II)的重複單元RU1 以及具有特定結構式(III)的重複單元RU2 其中,每個R11、R11’、R21以及R21’獨立地選自C1-C30正鏈的、支鏈的或環狀的烷基或它們的氟化的衍生物;a)每個hAr11、hAr11’、hAr21以及hAr21’獨立地選自C1-C60雜芳基,該等雜芳基具有以下結構: 其中 i)a係等於1、2、3或4的整數;ii)每個X、X’、X”或X”’獨立地選自O、S、Se、Si(R3)2以及NR3,其中R3係一個C1-C30正鏈的、支鏈的或環狀的烷基;iii)每個Y、Y’、Y”以及Y”’獨立地選自N以及CR4,其中R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基;b)每個R12、R12’、R22以及R22’獨立地選自氫、氰基或C1-C30烷基、氟烷基、烷氧基、芳基、雜芳基、羧烷基或乙醯氧基,其條件係包含在化學式(II)中的基團R11、R11’、hAr11以及hAr11’中的至少一個不同於包含在化學式(III)中的它的同系物,分別為R21、R21’、hAr21以及hAr21’The ketopyrrolopyrrole polymer of claim 1, wherein the repeating unit RU is a mixture consisting of the repeating unit RU1 having the specific structural formula (II) And a repeating unit RU2 having a specific structural formula (III) Wherein each of R 11 , R 11 ' , R 21 and R 21 ' is independently selected from a C 1 -C 30 positive-chain, branched or cyclic alkyl group or a fluorinated derivative thereof; a) Each of hAr 11 , hAr 11 ' , hAr 21 and hAr 21 ' is independently selected from a C 1 -C 60 heteroaryl group having the following structure: Wherein i) a is an integer equal to 1, 2, 3 or 4; ii) each X, X', X" or X"' is independently selected from the group consisting of O, S, Se, Si(R 3 ) 2 and NR 3 Wherein R 3 is a C 1 -C 30 positive-chain, branched or cyclic alkyl group; iii) each Y, Y', Y" and Y"' are independently selected from N and CR 4 , wherein R 4 is hydrogen, halogen, cyano or a C 1 -C 30 normal chain, branched or cyclic alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy; b) each R 12 , R 12 ' , R 22 and R 22 ' are independently selected from hydrogen, cyano or C 1 -C 30 alkyl, fluoroalkyl, alkoxy, aryl, heteroaryl, carboxy An alkyl group or an ethoxylated group, the conditions of which are at least one of the groups R 11 , R 11 ' , hAr 11 and hAr 11 ' contained in the formula (II) are different from those contained in the formula (III) Homologs are R 21 , R 21 ' , hAr 21 and hAr 21 ', respectively . 如以上申請專利範圍中任一項之二酮吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: 其中R3係一個C1-C30正鏈的、支鏈的或環狀的烷基,R4係氫、鹵素、氰基或一個C1-C30正鏈的、支鏈的或環狀的烷基、全氟烷基、烷氧基、硫代烷基或硫代烷氧基。 A diketopyrrolopyrrole polymer according to any one of the preceding claims, wherein each of hAr 1 and hAr 1 ' is independently selected from: Wherein R 3 is a C 1 -C 30 normal chain, branched or cyclic alkyl group, and R 4 is hydrogen, halogen, cyano or a C 1 -C 30 positive chain, branched or cyclic Alkyl, perfluoroalkyl, alkoxy, thioalkyl or thioalkoxy. 如申請專利範圍第6項之二酮吡咯並吡咯聚合物 ,其中每個hAr1和hAr1’獨立地選自: A ketopyrrolopyrrole polymer as claimed in claim 6 wherein each of hAr 1 and hAr 1' is independently selected from: 如申請專利範圍第6項之二酮吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: A ketopyrrolopyrrole polymer as claimed in claim 6 wherein each of hAr 1 and hAr 1' is independently selected from: 如申請專利範圍第6項之二酮吡咯並吡咯聚合物,其中每個hAr1和hAr1’獨立地選自: A ketopyrrolopyrrole polymer as claimed in claim 6 wherein each of hAr 1 and hAr 1' is independently selected from: 如除申請專利範圍第3項的以上申請專利範圍中任一項之二酮吡咯並吡咯聚合物,其中介於0 mol.%與50 mol.%之間的該等重複單元係具有以下通式中的一或多個的重複單元RU*, A diketopyrrolopyrrole polymer according to any one of the above claims in the third aspect of the patent application, wherein between 0 mol.% and 50 mol.% of the repeat units have the following formula One or more of the repeating units RU*, 如以上申請專利範圍中任一項之二酮吡咯並吡咯 聚合物,該等聚合物具有的藉由凝膠滲透色譜使用聚苯乙烯校準標準品所確定的數均聚合度少至為10。 a diketopyrrolopyrrole according to any one of the above claims Polymers having a number average degree of polymerization of as little as 10 as determined by gel permeation chromatography using polystyrene calibration standards. 如以上申請專利範圍中任一項之二酮吡咯並吡咯聚合物,該等聚合物在至少一種溶劑中在25℃至50℃範圍內選擇的一或多個溫度下具有至少10 mg/ml的溶解度,該溶劑選自由以下各項組成的組:甲苯、二甲苯、均三甲苯、四氫呋喃、氯仿、氯苯、二氯苯以及它們的混合物。 A diketopyrrolopyrrole polymer according to any one of the preceding claims, wherein the polymers have at least 10 mg/ml at one or more temperatures selected from the range of 25 ° C to 50 ° C in at least one solvent. Solubility, the solvent is selected from the group consisting of toluene, xylene, mesitylene, tetrahydrofuran, chloroform, chlorobenzene, dichlorobenzene, and mixtures thereof. 一種電子裝置,包括至少一種聚合物,該聚合物選自如以上申請專利範圍中任一項之二酮吡咯並吡咯聚合物。 An electronic device comprising at least one polymer selected from the group consisting of diketopyrrolopyrrole polymers of any of the above claims. 如申請專利範圍26項之電子裝置,包括包含有該至少一種聚合物的至少一個光電池或至少一個電晶體。 An electronic device as claimed in claim 26, comprising at least one photovoltaic cell or at least one transistor comprising the at least one polymer. 一種用於製造如以上申請專利範圍之一種或多種聚合物之方法,該方法包括以下步驟:a)獲得或提供至少一種二雜芳基取代的二酮吡咯並吡咯單體,該單體具有以下結構: 其中LG1係一離去基團,例如溴原子;b)獲得或提供至少一種二離去基團取代的乙烯單體,該單體具有以下結構: 其中LG2係一離去基團,該離去基團能夠藉由與LG1(例如SnR2” 3,其中R2”係烷基或芳基)反應而被消除;c)在一種過渡金屬催化劑錯合物的存在下,使包含該至少一種第一個二雜芳基取代的二酮吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體的一種混合物發生反應,以便產生如以上申請專利範圍中的一項或多項之共聚物。 A process for the manufacture of a polymer or polymers according to the above patent application, the process comprising the steps of: a) obtaining or providing at least one diheteroaryl substituted diketopyrrolopyrrole monomer having the following structure: Wherein LG 1 is a leaving group such as a bromine atom; b) an ethylene monomer obtained or provided with at least one di-removing group having the following structure: Wherein LG 2 is a leaving group capable of being eliminated by reaction with LG 1 (eg, SnR 2′ 3 , wherein R 2′′ is an alkyl or aryl group); c) in a transition metal Reacting a mixture comprising the at least one first diheteroaryl substituted diketopyrrolopyrrole monomer and the at least one dipartition group substituted ethylene monomer in the presence of a catalyst complex such that A copolymer is produced as one or more of the above patent claims. 如申請專利範圍第15項之方法,其中該混合物包含基本上等莫耳量的該至少一種第一個二雜芳基取代的二酮吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體。 The method of claim 15, wherein the mixture comprises substantially equal molar amount of the at least one first diheteroaryl-substituted diketopyrrolopyrrole monomer and the at least one di-releasing group. Ethylene monomer. 如申請專利範圍第15或16項之方法,其中該混合物基本上不含除該至少一種第一個二雜芳基取代的二酮吡咯並吡咯單體以及該至少一種二離去基團取代的乙烯單體以外的任何單體。 The method of claim 15 or 16, wherein the mixture is substantially free of the diketopyrrolopyrrole monomer substituted with the at least one first diheteroaryl group and the at least one dipartyl group substituted Any monomer other than the ethylene monomer. 如申請專利範圍第15或16項之方法,其中該混合物進一步包含至少一種自反應性單體,該單體具有以下結構:LG1-hAr*-LG2其中hAr*選自C1-C60雜芳基,該等雜芳基具有以下結構: 並且a、LG1、LG2、X、X’、X”、X”’、Y、Y’、Y”以及Y”’如在相關的以上申請專利範圍中所定義。 The method of claim 15 or 16, wherein the mixture further comprises at least one self-reactive monomer having the structure: LG 1 -hAr*-LG 2 wherein hAr* is selected from C 1 -C 60 Heteroaryl, these heteroaryl groups have the following structure: And a, LG 1 , LG 2 , X, X', X", X"', Y, Y', Y", and Y"' are as defined in the related above patent application.
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