[go: up one dir, main page]

TW201326449A - Method for producing gas barrier plastic molded body - Google Patents

Method for producing gas barrier plastic molded body Download PDF

Info

Publication number
TW201326449A
TW201326449A TW101123440A TW101123440A TW201326449A TW 201326449 A TW201326449 A TW 201326449A TW 101123440 A TW101123440 A TW 101123440A TW 101123440 A TW101123440 A TW 101123440A TW 201326449 A TW201326449 A TW 201326449A
Authority
TW
Taiwan
Prior art keywords
gas
film
gas barrier
plastic molded
heating element
Prior art date
Application number
TW101123440A
Other languages
Chinese (zh)
Other versions
TWI537415B (en
Inventor
Masaki Nakaya
Midori Takiguchi
Mari Shimizu
Aiko Sato
Hiroyasu Tabuchi
Eitaro Matsui
Original Assignee
Kirin Brewery
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2011/080399 external-priority patent/WO2012091095A1/en
Application filed by Kirin Brewery filed Critical Kirin Brewery
Publication of TW201326449A publication Critical patent/TW201326449A/en
Application granted granted Critical
Publication of TWI537415B publication Critical patent/TWI537415B/en

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Details Of Rigid Or Semi-Rigid Containers (AREA)

Abstract

The purpose of the present invention is to provide a method for forming a gas barrier thin film, which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only starting material gases that are highly safe. A method for producing a gas barrier plastic molded body according to the present invention is a method for producing a gas barrier plastic molded body (90), wherein a gas barrier thin film (92) is formed on the surface of a plastic molded body (91), comprising the following film formation step, in which the gas barrier thin film (92) is formed on the surface of the plastic molded body by a heating element CVD method using an organic silane compound represented by the general formula (1) as a main starting material gas and using an oxidation gas as an additive gas, while using a heating element that contains tantalum (Ta) as a main constituent element. In formula (1), n represents 2 or 3, and X represents SiH3, H or NH2.

Description

阻氣性塑膠成形體之製造方法 Method for producing gas barrier plastic molded body

本發明係關於一種阻氣性塑膠成形體之製造方法。 The present invention relates to a method of producing a gas barrier plastic molded body.

先前,於塑膠成形體之表面形成薄膜而賦予阻氣性。揭示有使用電漿化學蒸鍍法(電漿CVD(chemical vapor deposition,化學氣相沈積)法)於塑膠製容器之內表面積層以無機氧化物為主體之具有阻氣性之薄膜(以下,亦存在稱為阻氣薄膜之情形)的方法(例如參照專利文獻1)。然而,於利用電漿CVD法而形成薄膜之方法中,薄膜形成時電漿會對膜表面造成損傷,膜之緻密度容易受損,而難以獲得較高阻之氣性。又,電漿CVD法係利用電漿分解原料氣體而使其離子化,並於塑膠容器之表面使經電場加速之離子碰撞而形成薄膜,因此必需高頻電源及高頻電力匹配裝置,而存在不可避免之裝置成本昂貴之問題。 Previously, a film was formed on the surface of a plastic molded body to impart gas barrier properties. A film having a gas barrier property mainly composed of an inorganic oxide in a surface area of a plastic container by using a plasma chemical vapor deposition method (hereinafter, chemical vapor deposition (Chemical Vapor Deposition) method) There is a method called a gas barrier film (for example, refer to Patent Document 1). However, in the method of forming a thin film by the plasma CVD method, the plasma may cause damage to the surface of the film when the film is formed, and the density of the film is easily damaged, and it is difficult to obtain a gas with high resistance. Further, the plasma CVD method uses a plasma to decompose a raw material gas to ionize it, and collides ions accelerated by an electric field on a surface of a plastic container to form a thin film. Therefore, a high-frequency power source and a high-frequency power matching device are required. The inevitable problem of expensive equipment.

使原料氣體接觸發熱之發熱體而發生分解並使生成之化學種直接或於氣相中經過反應過程後於基材上堆積為薄膜的方法,即,被稱為發熱體CVD法、Cat-CVD法(Catalytic Chemical Vapor Deposition,觸媒化學氣相沈積)或熱絲CVD法之CVD法(以下,於本說明書中稱為發熱體CVD法),可解決上述電漿CVD法之問題,以較電漿CVD法之成膜裝置簡單且低成本之成膜裝置形成緻密且具有較高之阻氣性之薄膜,因此作為下一代成膜方法而受到關注。然而,若使用單矽烷、二矽烷或三矽烷等氫化矽作為原料氣 體,則由於該等具有自燃性,故而於安全裝置方面花費成本,相對於電漿CVD法之成膜裝置而成本優點減弱。因此,本申請人提出有如下技術:使用非自燃性原料等安全性較高之原料作為原料氣體,並利用發熱體CVD法於塑膠容器之壁面形成SiOx薄膜或AlOx薄膜(例如參照專利文獻2)。 A method in which a raw material gas is brought into contact with a heat generating body which generates heat, and the generated chemical species is deposited as a thin film on a substrate directly or in a gas phase after passing through a reaction process, that is, a heating body CVD method, Cat-CVD method The CVD method (Catalytic Chemical Vapor Deposition) or the hot-wire CVD method (hereinafter referred to as the heating element CVD method in the present specification) can solve the above problem of the plasma CVD method, and is more electric. The film forming apparatus of the slurry CVD method is a simple and low-cost film forming apparatus which forms a dense film having high gas barrier properties, and thus has attracted attention as a next-generation film forming method. However, if hydrazine hydride such as monodecane, dioxane or trioxane is used as the raw material gas Since the body is self-igniting, it costs a safety device, and the cost advantage is weakened with respect to the film forming apparatus of the plasma CVD method. Therefore, the present applicant has proposed a technique of forming a SiOx film or an AlOx film on the wall surface of a plastic container by using a heat-generating CVD method using a material having a high safety such as a non-self-igniting raw material as a material gas (for example, see Patent Document 2). .

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2005-200043號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-200043

[專利文獻2]日本專利特開2008-127053號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-127053

由於SiOx薄膜無色透明並具有較高之阻氣性,故而廣泛用作阻氣薄膜。然而,已知SiOx薄膜於耐水性方面存在問題。SiOx薄膜若於薄膜中含有碳則與塑膠基板之密接性良好,但若增加碳之含量則存在著色之問題,用途受到限制。至今為止,幾乎未研究僅使用安全性較高之原料氣體並利用發熱體CVD法形成實質上無色且具有阻氣性之阻氣薄膜。 Since the SiOx film is colorless and transparent and has high gas barrier properties, it is widely used as a gas barrier film. However, SiOx films are known to have problems in water resistance. When the SiOx film contains carbon in the film, the adhesion to the plastic substrate is good. However, if the content of carbon is increased, there is a problem of coloring, and the use is limited. Heretofore, it has been hardly studied to form a gas barrier film which is substantially colorless and has gas barrier properties by using a heat generating CVD method using only a material gas having high safety.

本發明之目的在於提供一種於塑膠成形體之表面利用發熱體CVD法並僅使用與使用矽烷或三甲基鋁等之情形相比安全性較高之原料氣體而形成實質上無色且具有阻氣性之阻氣薄膜的方法。 An object of the present invention is to provide a material which is substantially colorless and has a gas barrier by using a heating element CVD method on the surface of a plastic molded body and using only a material gas having a higher safety than the case of using decane or trimethylaluminum. The method of gas barrier film.

本發明之阻氣性塑膠成形體之製造方法係於塑膠成形體之表面形成阻氣薄膜之阻氣性塑膠成形體之製造方法;其特徵在於包括以下成膜步驟:於上述塑膠成形體之表面,利用發熱體CVD法,使用通式(化1)所示之有機矽烷系化合物作為主要原料氣體,且使用氧化氣體作為添加氣體,且使用包含鉭(Ta)作為主要構成元素之發熱體,而形成上述阻氣薄膜。 The method for producing a gas barrier plastic molded body of the present invention is a method for producing a gas barrier plastic molded body in which a gas barrier film is formed on a surface of a plastic formed body, which comprises the following film forming step: on the surface of the plastic molded body In the heating element CVD method, an organic decane compound represented by the formula (Chemical Formula 1) is used as a main material gas, and an oxidizing gas is used as an additive gas, and a heating element containing cerium (Ta) as a main constituent element is used. The above gas barrier film is formed.

(化1)H3Si-Cn-X於化1中,n為2或3,X為SiH3、H或NH2(Chemical Formula 1) H 3 Si-C n -X In Chemical 1, 1 is 2 or 3, and X is SiH 3 , H or NH 2 .

於本發明之阻氣性塑膠成形體之製造方法中,上述有機矽烷系化合物較佳為乙烯基矽烷。與使用矽烷或三甲基鋁等之情形相比,可安全且有效地形成阻氣性優異之薄膜。 In the method for producing a gas barrier plastic molded article of the present invention, the organodecane compound is preferably vinyl decane. A film excellent in gas barrier properties can be formed safely and efficiently as compared with the case of using decane or trimethylaluminum.

於本發明之阻氣性塑膠成形體之製造方法中,上述氧化氣體較佳為包含二氧化碳。膜之氧化程度可控制,且即便著色較少亦可發揮較高之阻氣性。尤其是,若使用二氧化碳則膜之氧化程度之控制較容易,可獲得較廣之所謂製程工作範圍。 In the method for producing a gas barrier plastic molded article of the present invention, the oxidizing gas preferably contains carbon dioxide. The degree of oxidation of the film can be controlled, and even if the coloring is small, a high gas barrier property can be exhibited. In particular, if carbon dioxide is used, the degree of oxidation of the film is relatively easy to control, and a wide range of so-called process operations can be obtained.

於本發明之阻氣性塑膠成形體之製造方法中,包括上述二氧化碳與上述有機矽烷系化合物之混合比為6:100~260:100之形態。 In the method for producing a gas barrier plastic molded article of the present invention, the mixing ratio of the carbon dioxide to the organic decane-based compound is in the form of 6:100 to 260:100.

於本發明之阻氣性塑膠成形體之製造方法中,包括上述氧化氣體含有氧氣,且上述氧氣與上述有機矽烷系化合物之混合比為4:100~130:100之形態。 In the method for producing a gas barrier plastic molded article of the present invention, the oxidizing gas contains oxygen, and a mixing ratio of the oxygen gas to the organic decane compound is 4:100 to 130:100.

於本發明之阻氣性塑膠成形體之製造方法中,包括上述 塑膠成形體為膜、片材或容器之形態。 In the method for producing a gas barrier plastic molded body of the present invention, the above The plastic formed body is in the form of a film, a sheet or a container.

於本發明之阻氣性塑膠成形體之製造方法中,包括上述發熱體為金屬鉭(Ta)、鉭基合金或碳化鉭(TaCx)之形態。 In the method for producing a gas barrier plastic molded article of the present invention, the heat generating body is in the form of a metal tantalum (Ta), a tantalum-based alloy or tantalum carbide (TaC x ).

於本發明之阻氣性塑膠成形體之製造方法中,較佳為於上述成膜步驟後具有向環境中供給氧化氣體並加熱發熱體的發熱體之再生步驟。可於複數個成形體以相同條件連續成膜時,抑制後半成膜者之阻氣性低於前半成膜者之阻氣性。 In the method for producing a gas barrier plastic molded article of the present invention, it is preferred to have a regeneration step of supplying a heating element that supplies an oxidizing gas to the environment and heats the heating element after the film forming step. When a plurality of formed bodies are continuously formed under the same conditions, the gas barrier properties of the latter half of the film are suppressed to be lower than those of the first half of the film.

本發明可提供一種於塑膠成形體之表面利用發熱體CVD法並僅使用安全性較高之原料氣體而形成實質上無色且具有阻氣性之薄膜的方法。 The present invention can provide a method of forming a substantially colorless film having gas barrier properties by using a heat generating body CVD method on the surface of a plastic molded body and using only a material gas having high safety.

繼而,關於本發明展示實施形態並詳細進行說明,然而本發明並不限定於該等記載而解釋。只要實現本發明之效果,則實施形態亦可進行種種變形。 Hereinafter, the embodiments of the present invention will be described in detail, but the present invention is not limited by the description. The embodiment can be variously modified as long as the effects of the present invention are achieved.

首先,對可於塑膠成形體之表面形成阻氣薄膜之成膜裝置進行說明。圖1係表示成膜裝置之一形態之概略圖。圖1所示之成膜裝置係於塑膠成形體為容器之情形時可於該容器之內表面形成薄膜者。 First, a film forming apparatus which can form a gas barrier film on the surface of a plastic molded body will be described. Fig. 1 is a schematic view showing one form of a film forming apparatus. The film forming apparatus shown in Fig. 1 is formed by forming a film on the inner surface of the container when the plastic molded body is a container.

圖1所示之成膜裝置100包括:真空腔室6,其收容作為塑膠成形體之塑膠容器11;排氣泵(未圖示),其將真空腔室6抽成真空;原料氣體供給管23,其可插拔地配置於塑膠容器11之內部並向塑膠容器11之內部提供原料氣體,由 絕緣且耐熱之材料形成;發熱體18,其由原料氣體供給管23支撐;及加熱電源20,其對發熱體18通電使之發熱。 The film forming apparatus 100 shown in Fig. 1 includes a vacuum chamber 6 that houses a plastic container 11 as a plastic molded body, an exhaust pump (not shown) that evacuates the vacuum chamber 6 into a vacuum, and a raw material gas supply tube. 23, which is insertably disposed inside the plastic container 11 and supplies a material gas to the inside of the plastic container 11 by An insulating and heat-resistant material is formed; the heating element 18 is supported by the material gas supply pipe 23; and the heating power source 20 is energized to heat the heating element 18.

真空腔室6於其內部形成有收容塑膠容器11之空間,該空間成為用於形成薄膜之反應室12。真空腔室6包括下腔室13及上腔室15,上腔室15裝卸自由地安裝於該下腔室13之上部並以O型環14密封下腔室13之內部。上腔室15中存在未圖示之上下驅動機構,隨著塑膠容器11之搬入、搬出而上下移動。下腔室13之內部空間係以稍大於收容於此處之塑膠容器11之外形之方式而形成。 The vacuum chamber 6 is formed therein with a space for accommodating the plastic container 11, which becomes the reaction chamber 12 for forming a film. The vacuum chamber 6 includes a lower chamber 13 and an upper chamber 15, and the upper chamber 15 is detachably attached to the upper portion of the lower chamber 13 and seals the inside of the lower chamber 13 with an O-ring 14. The upper chamber 15 has an upper and lower driving mechanism (not shown), and moves up and down as the plastic container 11 is moved in and out. The internal space of the lower chamber 13 is formed in a manner slightly larger than the outer shape of the plastic container 11 accommodated therein.

真空腔室6之內側,尤其是下腔室13之內側,為防止隨著發熱體18之發熱而放射之光之反射,較佳為內面28係黑色內壁,或內面具有表面粗糙度(Rmax)為0.5 μm以上之凹凸。表面粗糙度(Rmax)係使用例如表面粗糙度測定器(Ulvac Techno公司製造,DEKTAX3)而測定。為使內面28成為黑色內壁,存在鍍黑鎳、鍍黑鉻等電鍍處理,RAYDENT(冷電鍍)、染黑等化成皮膜處理,或塗佈黑色塗料進行著色之方法。進而,較佳為將流動冷卻水之冷卻管等冷卻裝置29設置於真空腔室6之內部或外部而防止下腔室13之溫度上升。真空腔室6中,尤其以下腔室13為對象,其原因在於發熱體18插入塑膠容器11時恰好成為收容於下腔室13之內部空間中之狀態。藉由進行光之反射之防止及真空腔室6之冷卻,而可抑制塑膠容器11之溫度上升及伴隨於此之熱變形。進而,若將包括自已通電之發熱體18產生之放射光可通過之透明體的腔室30,例如玻璃製腔 室配置於下腔室13之內側,則接觸塑膠容器11之玻璃製腔室之溫度難以上升,因此可進一步減輕對塑膠容器11造成之熱影響。 The inner side of the vacuum chamber 6, especially the inner side of the lower chamber 13, is for preventing the reflection of light emitted by the heating of the heating element 18, preferably the inner surface 28 is a black inner wall, or the inner surface has a surface roughness. (Rmax) is a bump of 0.5 μm or more. The surface roughness (Rmax) is measured using, for example, a surface roughness measuring instrument (manufactured by Ulvac Techno, DEKTAX3). In order to make the inner surface 28 a black inner wall, there is a plating treatment such as black nickel plating or black chrome plating, a film processing such as RAYDENT (cold plating) or blackening, or a method of applying a black paint for coloring. Further, it is preferable to provide a cooling device 29 such as a cooling pipe for flowing cooling water inside or outside the vacuum chamber 6, thereby preventing the temperature of the lower chamber 13 from rising. In the vacuum chamber 6, particularly, the following chambers 13 are targeted, because the heat generating body 18 is inserted into the plastic container 11 in a state of being accommodated in the internal space of the lower chamber 13. By preventing the reflection of light and the cooling of the vacuum chamber 6, the temperature rise of the plastic container 11 and the thermal deformation accompanying this can be suppressed. Further, if a chamber 30 including a transparent body through which the emitted light generated by the self-energized heating element 18 can pass is formed, for example, a glass cavity Since the chamber is disposed inside the lower chamber 13, the temperature of the glass chamber contacting the plastic container 11 is hard to rise, so that the thermal influence on the plastic container 11 can be further alleviated.

原料氣體供給管23係於上腔室15之內側頂板面之中央以向下方下垂之方式而被支撐。原料氣體33及添加氣體或根據需要而使用之載氣經由流量調整器24a、24b、24c及閥門25a、25b、25c、25d流入原料氣體供給管23。原料氣體33之供給於用作原料氣體33之物質為液體之情形時,可利用起泡法而進行供給。即,一面利用流量調節器24a控制流量,一面自儲氣瓶42a將起泡氣體供給至收容於原料槽40a內之起始原料41a,使起始原料41a產生蒸氣並作為原料氣體33進行供給。載氣係收容於儲氣瓶42c中,一面利用流量調節器24c控制流量一面進行供給。於圖1所示之成膜裝置中,於用作原料氣體之物質為氣體之情形時,變形為如下形態即可:不設置原料槽40a,而將原料氣體填充於儲氣瓶42a中,一面利用流量調整器24a控制流量一面進行供給。 The material gas supply pipe 23 is supported so as to be suspended in the center of the inner top surface of the upper chamber 15 so as to hang downward. The material gas 33 and the additive gas or the carrier gas used as needed flow into the material gas supply pipe 23 via the flow rate adjusters 24a, 24b, and 24c and the valves 25a, 25b, 25c, and 25d. When the material gas 33 is supplied to the material used as the material gas 33 as a liquid, it can be supplied by a foaming method. In other words, the flow rate is controlled by the flow rate regulator 24a, and the foaming gas is supplied from the gas cylinder 42a to the starting material 41a contained in the raw material tank 40a, and the starting material 41a is vaporized and supplied as the material gas 33. The carrier gas system is housed in the gas cylinder 42c, and is supplied while controlling the flow rate by the flow rate adjuster 24c. In the film forming apparatus shown in Fig. 1, when the material used as the material gas is a gas, it may be deformed into a form in which the raw material gas is filled in the gas cylinder 42a without providing the raw material tank 40a. The flow rate regulator 24a controls the flow rate and supplies it.

原料氣體供給管23較佳為包括冷卻管並一體地形成。此種原料氣體供給管23之結構例如存在雙管結構。於原料氣體供給管23中,雙管之內側管路為原料氣體流路17,其一端連接於設置於上腔室15上之氣體供給口16,另一端成為氣體噴出孔17x。藉此,原料氣體係自連接於氣體供給口16之原料氣體流路17之前端的氣體噴出孔17x噴出。另一方面,雙管之外側管路係用於冷卻原料氣體供給管23之冷 卻水流路27,作為冷卻管而發揮作用。而且,於發熱體18通電發熱時,原料氣體流路17之溫度上升。為防止溫度上升,於冷卻水流路27中循環有冷卻水。即,於冷卻水流路27之一端,自連接於上腔室15之未圖示之冷卻水供給裝置供給冷卻水,並且使完成冷卻之冷卻水返回冷卻水供給裝置。另一方面,冷卻水流路27之另一端係於氣體噴出孔17x附近密封,冷卻水於此處折回而返。藉由冷卻水流路27,而原料氣體供給管23整體經冷卻。藉由進行冷卻而可降低對塑膠容器11造成之熱影響。因此,原料氣體供給管23之材質較佳為絕緣體且熱導率較大者。例如,較佳為由以氮化鋁、碳化矽、氮化矽或氧化鋁為主成分之材料形成之陶瓷管,或由以氮化鋁、碳化矽、氮化矽或氧化鋁為主成分之材料被覆表面之金屬管。可對發熱體穩定地通電,具有耐久性,且可藉由熱傳導而效率較佳地排出利用發熱體產生之熱。 The material gas supply pipe 23 preferably includes a cooling pipe and is integrally formed. The structure of the material gas supply pipe 23 is, for example, a double pipe structure. In the material gas supply pipe 23, the inner pipe of the double pipe is the material gas flow path 17, and one end thereof is connected to the gas supply port 16 provided in the upper chamber 15, and the other end is a gas discharge hole 17x. Thereby, the raw material gas system is ejected from the gas ejection hole 17x connected to the front end of the material gas flow path 17 of the gas supply port 16. On the other hand, the pipe outside the double pipe is used to cool the raw material gas supply pipe 23 However, the water flow path 27 functions as a cooling pipe. Further, when the heating element 18 is energized and heated, the temperature of the material gas flow path 17 rises. In order to prevent the temperature from rising, cooling water is circulated in the cooling water flow path 27. In other words, at one end of the cooling water flow path 27, cooling water is supplied from a cooling water supply device (not shown) connected to the upper chamber 15, and the cooling water that has been cooled is returned to the cooling water supply device. On the other hand, the other end of the cooling water flow path 27 is sealed in the vicinity of the gas ejection hole 17x, and the cooling water is folded back here. The raw material gas supply pipe 23 is cooled by the cooling water flow path 27. The thermal impact on the plastic container 11 can be reduced by cooling. Therefore, the material of the material gas supply pipe 23 is preferably an insulator and has a large thermal conductivity. For example, it is preferably a ceramic tube formed of a material mainly composed of aluminum nitride, tantalum carbide, tantalum nitride or aluminum oxide, or mainly composed of aluminum nitride, tantalum carbide, tantalum nitride or aluminum oxide. The material is coated with a metal tube on the surface. The heating element can be stably energized, has durability, and can efficiently discharge heat generated by the heating element by heat conduction.

關於原料氣體供給管23,作為未圖示之另一形態,亦可如下設置。即,將原料氣體供給管設置為雙管,以其外側管作為原料氣體流路並於外側管之側壁開孔,較佳為開複數個孔。另一方面,原料氣體供給管之雙管之內側管係由緻密之管形成,作為冷卻水流路而流動冷卻水。發熱體係沿原料氣體供給管之側壁而佈線,通過設置於外側管之側壁上之孔的原料氣體接觸沿側壁之部分之發熱體,可效率較佳地生成化學種。 The material gas supply pipe 23 may be provided as follows, as another form not shown. That is, the raw material gas supply pipe is provided as a double pipe, and the outer pipe is used as a material gas flow path to open a hole in the side wall of the outer pipe, and preferably a plurality of holes are opened. On the other hand, the inner tube of the double pipe of the material gas supply pipe is formed of a dense pipe, and the cooling water flows as a cooling water flow path. The heat generating system is routed along the side wall of the raw material gas supply pipe, and the raw material gas provided in the hole in the side wall of the outer pipe contacts the heat generating body along the side wall, whereby the chemical species can be efficiently generated.

氣體噴出孔17x若與塑膠容器11之底部過度分離,則難 以於塑膠容器11之內部形成薄膜。於本實施形態中,原料氣體供給管23之長度較佳為以自氣體噴出孔17x起至塑膠容器11之底部為止之距離L1成為5~50 mm之方式而形成。膜厚之均勻性提高。可以5~50 mm之距離於塑膠容器11之內表面形成均勻之薄膜。若距離大於50 mm則存在難以於塑膠容器11之底部形成薄膜之情形。又,若距離小於5 mm則存在難以噴出原料氣體之情形,或膜厚分佈不均勻之情形。該事實亦可理論上進行把握。於500 ml之容器之情形時,由於容器之主體徑為6.4 cm,常溫之空氣之平均自由行程λ=0.68/Pa[cm],故而分子流為壓力<0.106 Pa,黏性流為壓力>10.6 Pa,中間流為0.106 Pa<壓力<10.6 Pa。於成膜時之氣壓為5~100 Pa時,氣流自中間流變為黏性流,氣體噴出孔17x與塑膠容器11之底部之距離存在最適條件。 If the gas ejection hole 17x is excessively separated from the bottom of the plastic container 11, it is difficult A film is formed inside the plastic container 11. In the present embodiment, the length of the material gas supply pipe 23 is preferably such that the distance L1 from the gas discharge hole 17x to the bottom of the plastic container 11 is 5 to 50 mm. The uniformity of the film thickness is improved. A uniform film can be formed on the inner surface of the plastic container 11 at a distance of 5 to 50 mm. If the distance is larger than 50 mm, there is a case where it is difficult to form a film on the bottom of the plastic container 11. Further, when the distance is less than 5 mm, there is a case where it is difficult to discharge the material gas, or the film thickness distribution is not uniform. This fact can also be grasped theoretically. In the case of a 500 ml container, since the main body diameter of the container is 6.4 cm, the average free path of air at normal temperature is λ = 0.68/Pa [cm], so the molecular flow is pressure <0.106 Pa, and the viscous flow is pressure > 10.6. Pa, the intermediate flow is 0.106 Pa <pressure < 10.6 Pa. When the gas pressure at the time of film formation is 5 to 100 Pa, the gas flow changes from the intermediate flow to the viscous flow, and the distance between the gas ejection hole 17x and the bottom of the plastic container 11 is optimal.

發熱體18於發熱體CVD法中促進原料氣體之分解。由於具有導電性,故而可藉由通電而使其本身發熱。發熱體18形成為佈線形狀,且發熱體18之一端連接於連接部26a,連接部26a設置於原料氣體供給管23之上腔室15之固定位置之下方,為佈線19與發熱體18之連接位置。而且,由前端部分即設置於氣體噴出孔17x上之絕緣陶瓷構件35進行支撐。進而,返回,發熱體18之另一端連接於連接部26b。如此,由於發熱體18沿原料氣體供給管23之側面而受到支撐,故而以位於下腔室13之內部空間之大致主軸上之方式進行配置。圖1中例示有發熱體18以與原料氣體供 給管23之軸平行之方式沿原料氣體供給管23之周圍進行配置之情形,但亦可將連接部26a作為起點,螺旋狀地纏繞於原料氣體供給管23之側面,並由固定於氣體噴出孔17x附近之絕緣陶瓷35支撐後,向連接部26b折返而回。此處,發熱體18係藉由掛在絕緣陶瓷35上而固定於原料氣體供給管23上。圖1中,已例示發熱體18於原料氣體供給管23之氣體噴出孔17x附近而配置於氣體噴出孔17x之出口側之情形。藉此,自氣體噴出孔17x噴出之原料氣體容易與發熱體18接觸,因此可效率較佳地使原料氣體活化。此處,發熱體18較佳為稍稍離開原料氣體供給管23之側面而配置。其目的在於防止原料氣體供給管23之急劇之溫度上升。又,可增加與自氣體噴出孔17x噴出之原料氣體及反應室12中之原料氣體的接觸機會。包括該發熱體18之原料氣體供給管23之外徑必需小於塑膠容器之口部21之內徑。其目的在於將包括發熱體18之原料氣體供給管23自塑膠容器之口部21插入。因此,若必要程度以上地使發熱體18離開原料氣體供給管23之表面,則於將原料氣體供給管23自塑膠容器之口部21插入時容易接觸。若考慮到自塑膠容器之口部21插入時之位置偏差,則發熱體18之寬度較佳為10 mm以上且(口部21之內徑-6)mm以下。例如,口部21之內徑約為21.7~39.8 mm。 The heating element 18 promotes decomposition of the material gas in the heating element CVD method. Since it is electrically conductive, it can generate heat by itself by energization. The heating element 18 is formed in a wiring shape, and one end of the heating element 18 is connected to the connecting portion 26a, and the connecting portion 26a is provided below the fixed position of the upper chamber 15 of the material gas supply pipe 23 to connect the wiring 19 to the heating element 18. position. Further, the front end portion is supported by the insulating ceramic member 35 provided on the gas ejection hole 17x. Further, returning, the other end of the heating element 18 is connected to the connecting portion 26b. In this manner, since the heating element 18 is supported along the side surface of the material gas supply pipe 23, it is disposed so as to be positioned on the substantially main axis of the internal space of the lower chamber 13. In Fig. 1, a heating element 18 is illustrated for supply with a raw material gas. Although the axis of the tube 23 is arranged parallel to the periphery of the material gas supply pipe 23, the connecting portion 26a may be spirally wound around the side of the material gas supply pipe 23 as a starting point, and may be fixed to the gas. After the insulating ceramics 35 in the vicinity of the hole 17x are supported, they are folded back and returned to the connecting portion 26b. Here, the heating element 18 is fixed to the material gas supply pipe 23 by being hung on the insulating ceramic 35. In the case of the heat generating body 18 in the vicinity of the gas discharge hole 17x of the material gas supply pipe 23, the heat generating body 18 is disposed on the outlet side of the gas discharge hole 17x. Thereby, the material gas ejected from the gas ejection hole 17x is easily brought into contact with the heating element 18, so that the material gas can be efficiently activated. Here, it is preferable that the heating element 18 is disposed slightly away from the side surface of the material gas supply pipe 23. The purpose is to prevent an abrupt temperature rise of the material gas supply pipe 23. Further, the chance of contact with the material gas ejected from the gas ejection hole 17x and the material gas in the reaction chamber 12 can be increased. The outer diameter of the material gas supply pipe 23 including the heat generating body 18 must be smaller than the inner diameter of the mouth portion 21 of the plastic container. The purpose is to insert the material gas supply pipe 23 including the heating element 18 from the mouth portion 21 of the plastic container. Therefore, when the heating element 18 is separated from the surface of the material gas supply pipe 23 to the extent necessary, the material gas supply pipe 23 is easily contacted when being inserted from the mouth portion 21 of the plastic container. The width of the heating element 18 is preferably 10 mm or more and (the inner diameter of the mouth portion -6) mm or less in consideration of the positional deviation when the mouth portion 21 of the plastic container is inserted. For example, the inner diameter of the mouth portion 21 is about 21.7 to 39.8 mm.

發熱體18例如可藉由通電而發熱。於圖1所示之裝置中,發熱體18上經由連接部26a、26b及佈線19連接有加熱電源20。藉由利用加熱電源20向發熱體18供電而發熱體18 發熱。再者,本發明並不限定於發熱體18之發熱方法。使發熱體18發熱時之上限溫度較佳為設置為低於該發熱體之軟化溫度。若為軟化溫度以上,則存在發熱體變形而無法控制之情形。 The heating element 18 can generate heat by, for example, energization. In the apparatus shown in FIG. 1, the heating power source 20 is connected to the heating element 18 via the connecting portions 26a and 26b and the wiring 19. The heating element 18 is supplied to the heating element 18 by the heating power source 20 heat. Furthermore, the present invention is not limited to the heat generating method of the heat generating body 18. The upper limit temperature at which the heating element 18 generates heat is preferably set to be lower than the softening temperature of the heating element. If it is more than the softening temperature, there is a case where the heating element is deformed and cannot be controlled.

又,由於自塑膠容器之口部21起至容器之肩部為止塑膠容器11於成形時之延伸倍率較小,故而若將高溫發熱之發熱體18配置於附近,則容易產生熱引起之變形。根據實驗,若不使佈線19與發熱體18之連接位置即連接部26a、26b之位置自塑膠容器之口部21之下端離開10 mm以上,則塑膠容器11之肩部部分產生熱變形,若超過50 mm,則難以於塑膠容器11之肩部部分形成薄膜。因此,發熱體18較佳為以其上端位於距離塑膠容器之口部21之下端10~50 mm下方之方式而配置。即,較佳為以連接部26a、26b與口部21之下端之距離L2為10~50 mm之方式進行設置。可抑制容器之肩部之熱變形。 Further, since the stretching ratio of the plastic container 11 at the time of molding from the mouth portion 21 of the plastic container to the shoulder portion of the container is small, if the heat generating body 18 which generates heat at a high temperature is disposed in the vicinity, deformation due to heat is likely to occur. According to the experiment, if the position where the connection portion 26a, 26b, that is, the connection position of the wiring 19 and the heating element 18, is not separated from the lower end of the mouth portion 21 of the plastic container by 10 mm or more, the shoulder portion of the plastic container 11 is thermally deformed. When it exceeds 50 mm, it is difficult to form a film on the shoulder portion of the plastic container 11. Therefore, the heating element 18 is preferably disposed such that its upper end is located 10 to 50 mm below the lower end of the mouth portion 21 of the plastic container. That is, it is preferable to provide such that the distance L2 between the connecting portions 26a and 26b and the lower end of the mouth portion 21 is 10 to 50 mm. It can suppress the thermal deformation of the shoulder of the container.

又,排氣管22經由真空閥門8與上腔室15之內部空間連通,藉由未圖示之排氣泵而真空腔室6之內部之反應室12之空氣得以排出。 Further, the exhaust pipe 22 communicates with the internal space of the upper chamber 15 via the vacuum valve 8, and the air in the reaction chamber 12 inside the vacuum chamber 6 is discharged by an exhaust pump (not shown).

圖1所示之成膜裝置不需要高頻電源,與電漿CVD法之成膜裝置相比該裝置較為便宜。已關於在塑膠容器之內表面形成阻氣薄膜92之裝置進行說明,但於塑膠容器之外表面形成阻氣薄膜92時,例如可使用專利文獻2之圖4所示之成膜裝置而進行。又,於塑膠成形體為膜或片材之情形時,例如可藉由將反應室12設置為圓筒狀並使膜或片材沿 其內壁固定,而於膜或片材之表面形成阻氣薄膜92。又,亦可進行以下變形:於真空腔室6內設置包括陸續送出筒狀之膜或片材之輥及纏繞形成有薄膜之膜或片材之輥的纏繞裝置。又,成膜裝置並不限定於圖1所示之裝置,例如可如專利文獻2所示般進行種種變形。 The film forming apparatus shown in Fig. 1 does not require a high frequency power source, and the apparatus is relatively inexpensive compared with the film forming apparatus of the plasma CVD method. The apparatus for forming the gas barrier film 92 on the inner surface of the plastic container has been described. However, when the gas barrier film 92 is formed on the outer surface of the plastic container, for example, the film forming apparatus shown in Fig. 4 of Patent Document 2 can be used. Further, in the case where the plastic formed body is a film or a sheet, for example, the reaction chamber 12 can be set to a cylindrical shape and the film or sheet can be placed along the film. The inner wall is fixed, and a gas barrier film 92 is formed on the surface of the film or sheet. Further, a modification may be made in which a winding device including a roll for continuously feeding a film or sheet of a cylindrical shape and a roll for winding a film or sheet of a film is provided in the vacuum chamber 6. Moreover, the film forming apparatus is not limited to the apparatus shown in FIG. 1, and various modifications can be made, for example, as shown in Patent Document 2.

繼而,一面參照圖1一面關於本實施形態之阻氣性塑膠成形體之製造方法進行說明。圖2係表示本實施形態之阻氣性塑膠成形體之一例的剖面圖。本實施形態之阻氣性塑膠成形體之製造方法係於塑膠成形體91之表面形成阻氣薄膜92的阻氣性塑膠成形體90之製造方法,且其包括以下成膜步驟:於塑膠成形體91之表面(圖1中為塑膠容器11之內表面),利用發熱體CVD法,使用通式(化1)所示之有機矽烷系化合物作為主要原料氣體33,且使用氧化氣體作為添加氣體,且使用包含鉭(Ta)作為主要構成元素之發熱體18,而形成阻氣薄膜92。 Next, a method of manufacturing the gas barrier plastic molded body of the present embodiment will be described with reference to Fig. 1 . Fig. 2 is a cross-sectional view showing an example of a gas barrier plastic molded body of the embodiment. The method for producing a gas barrier plastic molded article of the present embodiment is a method for producing a gas barrier plastic molded body 90 in which a gas barrier film 92 is formed on the surface of a plastic molded body 91, and includes the following film forming step: a plastic molded body The surface of 91 (the inner surface of the plastic container 11 in Fig. 1) is an organic decane-based compound represented by the general formula (Chemical Formula 1) as a main raw material gas 33 by using a heating element CVD method, and an oxidizing gas is used as an additive gas. Further, a heat-generating body 18 containing tantalum (Ta) as a main constituent element is used to form a gas barrier film 92.

(化1)H3Si-Cn-X於化1中,n為2或3,X為SiH3、H或NH2(Chemical Formula 1) H 3 Si-C n -X In Chemical 1, 1 is 2 or 3, and X is SiH 3 , H or NH 2 .

(塑膠成形體對成膜裝置之安裝) (Installation of plastic molded body to film forming apparatus)

首先,打開通風口(未圖示)使真空腔室6對大氣開放。於卸除上腔室15之狀態下,自下腔室13之上部開口部向反應室12中插入作為塑膠成形體91之塑膠容器11而將其收容。其後,降下位置確定之上腔室15,並將安裝於上腔室15上之原料氣體供給管23及固定於其上之發熱體18自塑膠容器之口部21插入塑膠容器11內。然後,上腔室15經由O 型環14抵接於下腔室13,藉此反應室12成為密閉空間。此時,下腔室13之內壁面與塑膠容器11之外壁面之間隔保持大致均勻,且塑膠容器11之內壁面與發熱體18之間之間隔亦保持大致均勻。 First, a vent (not shown) is opened to open the vacuum chamber 6 to the atmosphere. In the state where the upper chamber 15 is removed, the plastic container 11 as the plastic molded body 91 is inserted into the reaction chamber 12 from the upper opening portion of the lower chamber 13 and housed therein. Thereafter, the upper chamber 15 is determined by lowering the position, and the material gas supply pipe 23 attached to the upper chamber 15 and the heat generating body 18 fixed thereto are inserted into the plastic container 11 from the mouth portion 21 of the plastic container. Then, the upper chamber 15 is via O The ring 14 abuts against the lower chamber 13, whereby the reaction chamber 12 becomes a closed space. At this time, the interval between the inner wall surface of the lower chamber 13 and the outer wall surface of the plastic container 11 is kept substantially uniform, and the interval between the inner wall surface of the plastic container 11 and the heat generating body 18 is also kept substantially uniform.

塑膠成形體91於圖1中雖顯示為容器之形態,但並不限定於此,亦包括膜或片材之形態。其形狀可根據目的及用途而適當設定,並無特別限定。容器包括蓋上、栓上或密封而使用之容器,或不使用該等而於開口狀態下使用之容器。開口部之大小可根據內容物而適當設定。塑膠容器包括具有適度剛性之具有特定壁厚之塑膠容器、及不具有剛性之由片材形成之塑膠容器。本發明並不受容器之製造方法之限制。內容物例如係水、茶飲料、清涼飲料、碳酸飲料或果汁飲料等飲料,液體、黏體、粉末或固體狀之食品。又,容器可為可回收容器亦可為一次性容器。膜或片材包括長條之片狀物、切割片。膜或片材無論延伸或未延伸均可。本發明不受塑膠成形體91之製造方法之限制。 Although the plastic molded body 91 is shown in the form of a container in Fig. 1, it is not limited thereto, and includes a form of a film or a sheet. The shape can be appropriately set depending on the purpose and use, and is not particularly limited. The container includes a container that is capped, bolted or sealed, or a container that is used in an open state without using the container. The size of the opening can be appropriately set depending on the content. The plastic container includes a plastic container having a moderate rigidity and a specific wall thickness, and a plastic container formed of a sheet material having no rigidity. The invention is not limited by the method of manufacture of the container. The contents are, for example, beverages such as water, tea drinks, refreshing drinks, carbonated drinks or fruit drinks, liquids, slims, powders or solid foods. Also, the container may be a recyclable container or a disposable container. The film or sheet comprises a strip of strips, a cut piece. The film or sheet may be either extended or unstretched. The present invention is not limited by the method of manufacturing the plastic formed body 91.

構成塑膠成形體91之樹脂係例如聚對苯二甲酸乙二酯樹脂(PET,Polyethylene Terephthalate)、聚對苯二甲酸丁二酯樹脂、聚萘二甲酸乙二酯樹脂、聚乙烯樹脂、聚丙烯樹脂(PP,Polypropylene)、環烯烴共聚物樹脂(COC,Cycloolefin Copolymer,環狀烯烴共聚合)、離子聚合物樹脂、聚-4-甲基戊烯-1樹脂、聚甲基丙烯酸甲酯樹脂、聚苯乙烯樹脂、乙烯-乙烯醇共聚合樹脂、丙烯腈樹脂、聚氯乙烯樹脂、聚偏二氯乙烯樹脂、聚醯胺樹脂、聚醯胺醯亞 胺樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚碸樹脂或四氟乙烯樹脂、丙烯腈-苯乙烯樹脂、丙烯腈-丁二烯-苯乙烯樹脂。該等可將1種作為單層或積層2種以上而使用,但就生產性方面而言,較佳為單層。又,樹脂之種類更佳為PET。 The resin constituting the plastic molded body 91 is, for example, polyethylene terephthalate (PET), polybutylene terephthalate resin, polyethylene naphthalate resin, polyethylene resin, polypropylene. Resin (PP, Polypropylene), cycloolefin copolymer resin (COC, Cycloolefin Copolymer, cyclic olefin copolymerization), ionic polymer resin, poly-4-methylpentene-1 resin, polymethyl methacrylate resin, Polystyrene resin, ethylene-vinyl alcohol copolymer resin, acrylonitrile resin, polyvinyl chloride resin, polyvinylidene chloride resin, polyamide resin, polyamidamine Amine resin, polyacetal resin, polycarbonate resin, polyfluorene resin or tetrafluoroethylene resin, acrylonitrile-styrene resin, acrylonitrile-butadiene-styrene resin. One type of these may be used as a single layer or a laminate, but it is preferably a single layer in terms of productivity. Further, the type of the resin is more preferably PET.

塑膠成形體91之厚度可根據目的及用途而適當設定,並無特別限定。例如,於塑膠成形體91為飲料用瓶等容器之情形時,瓶之壁厚較佳為50~500 μm,更佳為100~350 μm。又,於為構成包裝袋之膜之情形時,膜之厚度較佳為3~300 μm,更佳為10~100 μm。於塑膠成形體91為電子紙或有機EL(Organic Electro-Luminescence,有機電致發光)等之平板顯示器的基板之情形時,膜之厚度較佳為25~200 μm,更佳為50~100 μm。又,於為用於形成容器之片材之情形時,片材之厚度較佳為50~500 μm,更佳為100~350 μm。並且,於塑膠成形體91為容器之情形時,阻氣薄膜92係設置於其內壁面或外壁面之任一面或兩面上。又,於塑膠成形體91為膜之情形時,阻氣薄膜92係設置於其單面或兩面上。 The thickness of the plastic molded body 91 can be appropriately set depending on the purpose and use, and is not particularly limited. For example, when the plastic molded body 91 is a container such as a bottle for a drink, the wall thickness of the bottle is preferably 50 to 500 μm, more preferably 100 to 350 μm. Further, in the case of forming a film of a packaging bag, the thickness of the film is preferably from 3 to 300 μm, more preferably from 10 to 100 μm. In the case where the plastic molded body 91 is a substrate of a flat panel display such as an electronic paper or an organic EL (Organic Electro-Luminescence), the thickness of the film is preferably 25 to 200 μm, more preferably 50 to 100 μm. . Further, in the case of forming a sheet for a container, the thickness of the sheet is preferably from 50 to 500 μm, more preferably from 100 to 350 μm. Further, when the plastic molded body 91 is a container, the gas barrier film 92 is provided on either or both of the inner wall surface and the outer wall surface. Further, when the plastic molded body 91 is a film, the gas barrier film 92 is provided on one surface or both surfaces thereof.

(壓力調整步驟) (pressure adjustment step)

繼而,於關閉通風口(未圖示)後,使排氣泵(未圖示)動作,並打開真空閥門8,藉此而排出反應室12內之空氣。此時,不僅塑膠容器11之內部空間,塑膠容器11之外壁面與下腔室13之內壁面之間之空間亦被進行排氣而成為真空。即,反應室12整體經排氣。而且,較佳為將反應室12 內必需之壓力減壓至達到例如1.0~100 Pa。更佳為1.4~50 Pa。若未達1.0 Pa,則存在耗費排氣時間之情形。又,若超過100 Pa,則存在塑膠容器11內雜質增多而無法賦予較高之阻隔性之情形。若自大氣壓減壓至1.4~50 Pa,則可獲得適度之真空壓及來自大氣、裝置及容器之適度之殘留水蒸氣壓,可簡便地形成具有阻隔性之氧化薄膜。 Then, after the vent (not shown) is closed, an exhaust pump (not shown) is operated, and the vacuum valve 8 is opened to discharge the air in the reaction chamber 12. At this time, not only the internal space of the plastic container 11, but also the space between the outer wall surface of the plastic container 11 and the inner wall surface of the lower chamber 13 is exhausted to become a vacuum. That is, the entire reaction chamber 12 is exhausted. Moreover, it is preferred to have the reaction chamber 12 The necessary pressure is reduced to reach, for example, 1.0 to 100 Pa. More preferably 1.4 to 50 Pa. If it is less than 1.0 Pa, there is a case where exhaust time is consumed. Further, when it exceeds 100 Pa, there is a case where the amount of impurities in the plastic container 11 increases, and it is impossible to provide a high barrier property. When the pressure is reduced from atmospheric pressure to 1.4 to 50 Pa, a moderate vacuum pressure and a moderate residual vapor pressure from the atmosphere, equipment, and container can be obtained, and an oxide film having barrier properties can be easily formed.

(對發熱體之通電) (Power on the heating element)

繼而,例如藉由通電而使發熱體18發熱。發熱體18包含鉭(Ta)作為主要構成元素,例如存在包括金屬鉭之形態,包括鉭及鎢、鈮等與鉭形成合金之其他金屬之合金的形態。於合金之情形時,較佳為含有90質量%以上之鉭。更佳為99質量%以上,進而較佳為99.9%以上。發熱體18之發熱溫度較佳為1600℃以上。更佳為1700℃以上。又,發熱溫度之上限溫度較佳為設為低於該發熱體之軟化溫度。若為軟化溫度以上,則存在發熱體18變形而無法控制之情形。上限溫度較佳為2400℃。更佳為2100℃。 Then, the heating element 18 generates heat, for example, by energization. The heating element 18 contains tantalum (Ta) as a main constituent element, and for example, a form including a metal tantalum, and an alloy of niobium and an alloy of another metal such as tungsten or tantalum which forms an alloy with niobium. In the case of an alloy, it is preferably contained in an amount of 90% by mass or more. More preferably, it is 99% by mass or more, and further preferably 99.9% or more. The heat generation temperature of the heating element 18 is preferably 1600 ° C or higher. More preferably, it is 1700 ° C or more. Further, the upper limit temperature of the heat generation temperature is preferably set to be lower than the softening temperature of the heat generating body. If it is more than the softening temperature, the heating element 18 may be deformed and may not be controlled. The upper limit temperature is preferably 2400 °C. More preferably 2100 ° C.

發熱體18包括為碳化鉭(TaCx)之形態。碳化鉭(TaCx)中之碳原子之比較佳為以質量比計超過0質量%且為6.2質量%以下。更佳為超過3.2質量%且為6.2質量%以下。此時,碳化鉭(TaCx)中之碳原子之元素濃度較佳為超過0 at.%(atomic%,原子%)且為50 at.%以下。更佳為超過33 at.%且為50 at.%以下。此處,包含鉭(Ta)作為主要構成元素係指發熱體之材料以元素濃度計含有50 at.%以上之鉭原子。 The heating element 18 is in the form of tantalum carbide (TaC x ). The carbon atom in the tantalum carbide (TaC x ) is preferably more than 0% by mass and not more than 6.2% by mass in terms of a mass ratio. More preferably, it is more than 3.2% by mass and is 6.2% by mass or less. At this time, the element concentration of the carbon atom in the tantalum carbide (TaC x ) is preferably more than 0 at.% (atomic%) and 50 at.% or less. More preferably, it is more than 33 at.% and is 50 at.% or less. Here, the material containing tantalum (Ta) as a main constituent element means that the material of the heat generating body contains 50 at.% or more of germanium atoms in terms of element concentration.

(原料氣體之導入) (introduction of raw material gas)

其後,利用氣體流量調整器24a供給特定流量之原料氣體33,並利用氣體流量調整器24b供給特定流量之添加氣體。進而,一面根據需要利用氣體流量調整器24c對載氣進行流量控制,一面於閥門25d之近前將載氣混合至原料氣體33中。載氣係例如氬氣、氦氣、氮氣等惰性氣體。如此,原料氣體33及添加氣體係於經氣體流量調整器24a、24b控制流量之狀態下,或於經載氣控制流量之狀態下,於減壓至特定壓力之塑膠容器11內,自原料氣體供給管23之氣體噴出孔17x向發熱之發熱體18噴出。較佳為,於如此般使發熱體18升溫完畢後再開始噴出原料氣體33。自成膜初期即可利用發熱體18生成充分活化之化學種34,而可進一步提高與塑膠成形體之密接性。 Thereafter, the material flow rate 33 of a specific flow rate is supplied by the gas flow rate adjuster 24a, and the additive gas of a specific flow rate is supplied by the gas flow rate adjuster 24b. Further, the carrier gas is flow-controlled by the gas flow rate adjuster 24c as needed, and the carrier gas is mixed into the source gas 33 near the valve 25d. The carrier gas is an inert gas such as argon gas, helium gas or nitrogen gas. In this manner, the raw material gas 33 and the additive gas system are controlled by the gas flow rate adjusters 24a and 24b, or in a state where the flow rate is controlled by the carrier gas, and the pressure is reduced to a specific pressure in the plastic container 11 from the raw material gas. The gas discharge hole 17x of the supply pipe 23 is discharged to the heat generating body 18 that generates heat. Preferably, after the heating element 18 is heated up in this manner, the raw material gas 33 is discharged. At the initial stage of film formation, the chemical element 34 can be sufficiently activated by the heating element 18, and the adhesion to the plastic molded body can be further improved.

於用作原料氣體33之物質為液體之情形時,可利用起泡法進行供給。起泡法中使用之起泡氣體係例如氮氣、氬氣、氦氣等惰性氣體,更佳為氮氣。即,若使用填充於儲氣瓶42a中之起泡氣體一面利用氣體流量調整器24a控制流量一面使原料槽40a內之起始原料41a起泡,則起始原料41a氣化並混入氣泡中。如此,原料氣體33係於與起泡氣體混合之狀態下進行供給。 When the substance used as the material gas 33 is a liquid, it can be supplied by a foaming method. The foaming gas system used in the foaming method is an inert gas such as nitrogen, argon or helium, and more preferably nitrogen. In other words, when the flow rate is controlled by the gas flow rate adjuster 24a while the flow rate is controlled by the gas flow rate adjuster 24a, the starting material 41a in the raw material tank 40a is foamed, and the starting material 41a is vaporized and mixed into the bubbles. In this manner, the material gas 33 is supplied in a state of being mixed with the foaming gas.

原料氣體33主要係通式(化1)所示之有機矽烷系化合物。於化1中,n=2時,Cn之態樣例為C-C間為單鍵之態樣(C2H4)、C-C間為雙鍵之態樣(C2H2)、C-C間為三鍵之態樣(C2)。n=3時,Cn之態樣例為C-C間為單鍵之態樣(C3H6)、 C-C間為單鍵及雙鍵之態樣(C3H4)、C-C間為單鍵及三鍵之態樣(C3H2)。具體而言,通式(化1)所示之有機矽烷系化合物係例如乙烯基矽烷(H3SiC2H3)、二矽丁烷(H3SiC2H4SiH3)、二矽烷基乙炔(H3SiC2SiH3)、2-胺基乙基矽烷(H3SiC2H4NH2)。該等可單獨或組合而使用。其中,就成膜效率較高方面而言,更佳為乙烯基矽烷。 The material gas 33 is mainly an organic decane compound represented by the formula (Chemical Formula 1). In Yuhua 1, when n=2, the example of the state of C n is a state in which a bond between CCs is a single bond (C 2 H 4 ), a state in which a bond between CCs is a double bond (C 2 H 2 ), and between CCs. The three-button aspect (C 2 ). When n=3, the example of the state of C n is a single bond type between CCs (C 3 H 6 ), a single bond and a double bond between CCs (C 3 H 4 ), and a single bond between CCs. And the three-button aspect (C 3 H 2 ). Specifically, the organodecane compound represented by the formula (Chemical Formula 1) is, for example, vinyl decane (H 3 SiC 2 H 3 ), dioxane (H 3 SiC 2 H 4 SiH 3 ), dialkyl acetylene. (H 3 SiC 2 SiH 3 ), 2-aminoethyl decane (H 3 SiC 2 H 4 NH 2 ). These may be used singly or in combination. Among them, vinyl decane is more preferable in terms of a higher film forming efficiency.

於本實施形態中,若通式(化1)所示之有機矽烷系化合物為主原料氣體,則亦可將混合有副原料氣體之混合氣體作為原料氣體進行供給。此處,主原料氣體係指通式(化1)所示之有機矽烷系化合物之含量相對於原料氣體整體容量為50體積%以上,更佳為80體積%以上,特佳為90體積%以上。藉由使用副原料氣體,而可抑制原料成本,而更便宜地獲得阻氣性塑膠成形體。副原料氣體係例如乙炔、甲烷、乙烷。 In the present embodiment, when the organodecane-based compound represented by the formula (Chemical Formula 1) is used as the main raw material gas, the mixed gas in which the auxiliary raw material gas is mixed may be supplied as the raw material gas. Here, the main raw material gas system means that the content of the organic decane-based compound represented by the formula (Chemical Formula 1) is 50% by volume or more, more preferably 80% by volume or more, and particularly preferably 90% by volume or more based on the total capacity of the raw material gas. . By using the auxiliary material gas, the raw material cost can be suppressed, and the gas barrier plastic molded body can be obtained more inexpensively. A secondary feed gas system such as acetylene, methane, ethane.

原料氣體33之供給量並無特別限定,較佳為3~200 sccm。更佳為30~500 sccm。於利用起泡法進行供給之情形時,起泡氣體之流量較佳為3~80 sccm,更佳為10~50 sccm。 The supply amount of the material gas 33 is not particularly limited, but is preferably 3 to 200 sccm. More preferably 30~500 sccm. In the case of supplying by the foaming method, the flow rate of the foaming gas is preferably from 3 to 80 sccm, more preferably from 10 to 50 sccm.

添加氣體包含氧化氣體。氧化氣體係例如氧氣(O2)、臭氧(O3)、水蒸氣(H2O)、二氧化碳(CO2)。其中,更佳為二氧化碳。於本發明中,作為氧化氣體,較佳為排除笑氣(一氧化二氮,N2O)。 The added gas contains an oxidizing gas. Oxidation gas systems such as oxygen (O 2 ), ozone (O 3 ), water vapor (H 2 O), carbon dioxide (CO 2 ). Among them, carbon dioxide is more preferred. In the present invention, as the oxidizing gas, it is preferred to exclude nitrous oxide (nitrous oxide, N 2 O).

添加氣體之供給量根據氧化氣體之種類而有所不同,例如,於氧化氣體為二氧化碳之情形時,較佳為二氧化碳之 供給量與原料氣體33之供給量的混合比為6:100~260:100。更佳為相對於原料氣體之供給量為100,二氧化碳之供給量為20~200(CO2:原料氣體=1:5~2:1),特佳為相對於原料氣體之供給量為100,二氧化碳之供給量為40~100(CO2:原料氣體=1:2.5~1:1)。又,於氧化氣體為氧氣之情形時,較佳為氧氣之供給量與原料氣體33之供給量的混合比為4:100~130:100。更佳為相對於原料氣體之供給量為100,氧氣之供給量為10~100(O2:原料氣體=1:10~1:1),特佳為相對於原料氣體之供給量為100,氧氣之供給量為12~50(O2:原料氣體=1:8.3~0.5:1)。即,若以原料氣體之流量為50 sccm之情形為例進行說明,則於氧化氣體為二氧化碳之情形時,較佳為將二氧化碳之流量設置為3 sccm以上且130 sccm以下,更佳為設置為10 sccm以上且100 sccm以下,特佳為設置為20 sccm以上且50 sccm以下。又,於氧化氣體為氧氣之情形時,較佳為將氧氣之流量設置為2 sccm以上且65 sccm以下,更佳為設置為5 sccm以上且50 sccm以下,特佳為設置為6 sccm以上且25 sccm以下。 The supply amount of the additive gas varies depending on the type of the oxidizing gas. For example, when the oxidizing gas is carbon dioxide, the mixing ratio of the supply amount of carbon dioxide to the supply amount of the raw material gas 33 is preferably 6:100 to 260: 100. More preferably, the supply amount to the raw material gas is 100, the supply amount of carbon dioxide is 20 to 200 (CO 2 : raw material gas = 1:5 to 2:1), and the supply amount to the raw material gas is preferably 100. The supply of carbon dioxide is 40 to 100 (CO 2 : raw material gas = 1:2.5 to 1:1). Further, when the oxidizing gas is oxygen, the mixing ratio of the supply amount of oxygen to the supply amount of the material gas 33 is preferably 4:100 to 130:100. More preferably, the supply amount to the raw material gas is 100, the supply amount of oxygen is 10 to 100 (O 2 : raw material gas = 1:10 to 1:1), and the supply amount to the raw material gas is preferably 100. The supply of oxygen is 12 to 50 (O 2 : raw material gas = 1:8.3 to 0.5:1). In the case where the flow rate of the material gas is 50 sccm, the case where the oxidizing gas is carbon dioxide is preferably set to a flow rate of carbon dioxide of 3 sccm or more and 130 sccm or less, and more preferably set to 10 sccm or more and 100 sccm or less are particularly preferably set to 20 sccm or more and 50 sccm or less. Further, when the oxidizing gas is oxygen, the flow rate of oxygen is preferably set to 2 sccm or more and 65 sccm or less, more preferably 5 sccm or more and 50 sccm or less, and particularly preferably set to 6 sccm or more. Below 25 sccm.

載氣之流量並無特別限定,較佳為0~80 sccm。更佳為5~50 sccm。再者,於本說明書中,載氣之流量為0 sccm係指不使用載氣而僅供給原料氣體33及添加氣體,於此情形時不使用氣體流量調整器24c。 The flow rate of the carrier gas is not particularly limited, and is preferably 0 to 80 sccm. More preferably 5~50 sccm. In the present specification, the flow rate of the carrier gas is 0 sccm, and only the source gas 33 and the additive gas are supplied without using the carrier gas. In this case, the gas flow rate adjuster 24c is not used.

(成膜) (film formation)

一旦原料氣體33及添加氣體與發熱體18接觸,即生成包含Si、C及O作為構成元素之化學種34。藉由使該化學種34 到達塑膠容器11之內壁,而堆積包含至少矽、碳及氧作為構成元素之阻氣薄膜。於阻氣薄膜之成膜中,使發熱體18發熱並將原料氣體33及添加氣體噴附至發熱體18之時間(以下,存在稱為成膜時間之情形)較佳為0.5~10秒,更佳為1.0~6.0秒。成膜時真空腔室內之壓力較佳為減壓至達到例如1.0~100 Pa,更佳為1.4~50 Pa。 When the source gas 33 and the additive gas come into contact with the heating element 18, a chemical species 34 containing Si, C, and O as constituent elements is formed. By making the chemical species 34 The inner wall of the plastic container 11 is reached, and a gas barrier film containing at least bismuth, carbon and oxygen as constituent elements is deposited. In the film formation of the gas barrier film, the time during which the heating element 18 generates heat and the raw material gas 33 and the additive gas are sprayed onto the heating element 18 (hereinafter, referred to as a film formation time) is preferably 0.5 to 10 seconds. More preferably 1.0 to 6.0 seconds. The pressure in the vacuum chamber at the time of film formation is preferably reduced to, for example, 1.0 to 100 Pa, more preferably 1.4 to 50 Pa.

使用發熱體CVD法時,塑膠容器11與形成之薄膜之密接性非常優異。若自原料氣體流路17導入氫氣,則氫氣藉由與發熱體18之接觸分解反應而活化,可利用該活性種進行塑膠容器11之表面之清潔。更具體而言,可期待活化氫H*或氫自由基(原子狀氫)H之奪氫反應或蝕刻作用,例如可用於提高薄膜之密接性。 When the heating body CVD method is used, the adhesion between the plastic container 11 and the formed film is extremely excellent. When hydrogen gas is introduced from the material gas channel 17, the hydrogen gas is activated by the contact decomposition reaction with the heating element 18, and the surface of the plastic container 11 can be cleaned by the active species. More specifically, a hydrogen abstraction reaction or an etching action of an activated hydrogen H* or a hydrogen radical (atomic hydrogen) H can be expected, and for example, it can be used to improve the adhesion of a film.

又,若自原料氣體流路17導入NH3氣體,則利用藉由與發熱體18之接觸分解反應而生成之活性種,可進行對塑膠容器11之表面進行改質而使其穩定化之表面處理。更具體而言,可期待對表面之含氮官能基之附加或塑膠之高分子鏈之交聯反應。 When the NH 3 gas is introduced from the material gas channel 17 , the surface of the plastic container 11 can be modified and stabilized by using the active species generated by the contact decomposition reaction with the heating element 18 . deal with. More specifically, a crosslinking reaction to the nitrogen-containing functional group of the surface or the polymer chain of the plastic can be expected.

(成膜之結束) (the end of film formation)

薄膜達到特定厚度時即停止原料氣體33之供給。繼而,將反應室12內再度排氣後,導入未圖示之洩漏氣體,而使反應室12中達到大氣壓。其後,打開上腔室15取出塑膠容器11。於本實施形態之阻氣性塑膠成形體之製造方法中,較佳為使阻氣薄膜92之膜厚成為5~100 nm。更佳為10~85 nm,特佳為30~50 nm。若未達5 nm,則存在無法發揮較 高之阻氣性之情形。若超過100 nm,則存在透明性降低且容易產生薄膜之裂痕之情形。又,不經濟。 When the film reaches a certain thickness, the supply of the material gas 33 is stopped. Then, after the inside of the reaction chamber 12 is again exhausted, a leak gas (not shown) is introduced to bring the atmospheric pressure into the reaction chamber 12. Thereafter, the upper chamber 15 is opened to take out the plastic container 11. In the method for producing a gas barrier plastic molded article of the present embodiment, it is preferable that the film thickness of the gas barrier film 92 is 5 to 100 nm. More preferably, it is 10 to 85 nm, and particularly preferably 30 to 50 nm. If it is less than 5 nm, it will not be able to play. High resistance to gas. If it exceeds 100 nm, there is a case where transparency is lowered and cracking of the film is likely to occur. Also, it is not economical.

發熱體CVD法與電漿CVD等其他化學蒸鍍法或真空蒸鍍法、濺鍍法、離子電鍍法等物理蒸鍍(PVD)法相比,裝置簡單,可抑制裝置本身之成本。又,於發熱體CVD法中,藉由化學種之堆積而形成阻氣薄膜,因此與濕式法相比,可獲得體積密度較高之緻密之膜。 The heating element CVD method is simpler than the physical vapor deposition (PVD) method such as plasma vapor deposition, vacuum deposition, sputtering, or ion plating, and the like, and the cost of the device itself can be suppressed. Further, in the heating element CVD method, since the gas barrier film is formed by chemical species deposition, a dense film having a high bulk density can be obtained as compared with the wet method.

於使用上述通式(化1)所示之有機矽烷系化合物作為原料氣體而形成薄膜之情形時,若使用電漿CVD法,則只可將500 ml之PET瓶之氧穿透率抑制至2分之1左右,實用性能不充分。已知,若利用電漿CVD法形成包含DLC(類金剛石碳,Diamond-like Carbon)或SiOx之薄膜,則可將500 ml之PET瓶之氧穿透率抑制至10分之1以下,但於填充有碳酸飲料之情形時,伴隨瓶之膨脹而阻氣性降低。具體而言,若於利用電漿CVD法製成DLC膜或SiOx膜之500 ml之PET瓶(樹脂量23 g)中填充4 GV(氣體容積)之碳酸水並於38℃之條件下保持5天,則通常PET瓶之容量膨脹18~21 cm3(未經成膜之PET瓶之情形為22~26 cm3),且膨脹後之氧穿透率增加至1.5~2.9倍。此為PET瓶之膨脹及膨脹引起之薄膜損傷綜合性地表現之結果。另一方面,於使用上述通式(化1)所示之有機矽烷系化合物作為原料氣體而形成薄膜之情形時,若使用發熱體CVD法,則可將500 ml之PET瓶之氧穿透率降低至例如10分之1以下,可獲得充分之實用性能。又,於填充有碳酸飲料之情形時,可有效地抑制 瓶之膨脹,且阻氣性實質上並未降低。具體而言,若向使用發熱體CVD法而成膜之500 ml之PET瓶(樹脂量23 g)中填充4 GV(氣體容積)之碳酸水並於38℃之條件下保持5天,則通常瓶容量僅膨脹13~17 cm3(未經成膜之瓶之情形為22~26 cm3),且膨脹後之氧穿透率止於1.2~1.3倍之增加。 When a film is formed using the organodecane compound represented by the above formula (Chemical Formula 1) as a material gas, if the plasma CVD method is used, only the oxygen permeability of a 500 ml PET bottle can be suppressed to 2 About 1 point, the practical performance is not sufficient. It is known that if a film containing DLC (Diamond-like Carbon) or SiO x is formed by a plasma CVD method, the oxygen permeability of a 500 ml PET bottle can be suppressed to less than 1/10, but In the case of being filled with a carbonated beverage, the gas barrier property is lowered accompanying the expansion of the bottle. Specifically, if a 500 ml PET bottle (resin amount 23 g) which is a DLC film or a SiO x film by a plasma CVD method is filled with 4 GV (gas volume) of carbonated water and maintained at 38 ° C. 5 days, usually PET bottles capacity expansion 18 ~ 21 cm 3 (the case without forming the PET bottles is 22 ~ 26 cm 3), and the expansion of the oxygen transmission rate is increased to 1.5 to 2.9 times. This is a result of the comprehensive performance of the film damage caused by the expansion and expansion of the PET bottle. On the other hand, when a film is formed using the organic decane compound represented by the above formula (Chemical Formula 1) as a material gas, the oxygen permeability of a 500 ml PET bottle can be obtained by using a heating element CVD method. When it is reduced to, for example, 1/10 or less, sufficient practical performance can be obtained. Further, when the carbonated beverage is filled, the expansion of the bottle can be effectively suppressed, and the gas barrier properties are not substantially lowered. Specifically, when a 500 ml PET bottle (resin amount 23 g) formed by using a heating element CVD method is filled with 4 GV (gas volume) of carbonated water and kept at 38 ° C for 5 days, usually The bottle capacity is only expanded by 13~17 cm 3 (22~26 cm 3 without the film forming bottle), and the oxygen permeability after expansion stops at 1.2~1.3 times.

如此形成之阻氣薄膜92實質上無色。於本說明書中,實質上無色係指以JIS K 7105-1981「塑膠之光學特性試驗方法」中之色差即著色度b*值為指標而b*值為6以下者。b*值更佳為5以下,特佳為4以下。b*值可利用數1求出。於數1中,X、Y或Z係三刺激值。 The gas barrier film 92 thus formed is substantially colorless. In the present specification, the term "substantially colorless" refers to a color difference b * value of a color difference in JIS K 7105-1981 "Test method for optical properties of plastics", and a b * value of 6 or less. The b * value is more preferably 5 or less, and particularly preferably 4 or less. The b * value can be obtained by using the number 1. In the number 1, the X, Y or Z system is a tristimulus value.

[數1]b*=200[(Y/Y0)1/3-(Z/Z0)1/3] [Number 1] b*=200[(Y/Y 0 ) 1/3 -(Z/Z 0 ) 1/3 ]

關於要求實質上之無色透明性之阻氣性成形體,較佳為利用數2求出之阻隔性改良率(Barrier Improvement Factor,以下稱為BIF)為2以上。更佳為5以上,特佳為8以上。作為具體例,將阻氣性塑膠容器之容器容量設置為500毫升時之氧穿透度較佳為0.0175 cc/容器/天以下,更佳為0.0058 cc/容器/天以下,特佳為0.0035 cc/容器/天以下。再者,阻氣薄膜92之膜厚及氧穿透度之評價方法如實施例之欄所示。 The gas barrier molded article which is required to have substantially colorless transparency is preferably a barrier property improvement rate (hereinafter referred to as BIF) which is obtained by the number 2 and is 2 or more. More preferably 5 or more, and particularly preferably 8 or more. As a specific example, the oxygen permeability when the container capacity of the gas barrier plastic container is set to 500 ml is preferably 0.0175 cc / container / day or less, more preferably 0.0058 cc / container / day or less, and particularly preferably 0.0035 cc. / container / day below. Further, the film thickness of the gas barrier film 92 and the evaluation method of the oxygen permeability are as shown in the column of the examples.

(數2)BIF=[未形成薄膜之塑膠成形體之氧穿透度]/[阻氣性塑膠成形體之氧穿透度] (Number 2) BIF = [oxygen permeability of a plastic formed body without a film] / [oxygen permeability of a gas barrier plastic molded body]

於本實施形態中,將氧化氣體與通式(化1)所示之有機矽烷系化合物一起供給之理由如下。若僅供給通式(化1)所 示之有機矽烷系化合物,則獲得之薄膜主要包含矽(Si)及碳(C)作為構成元素,阻氣性非常高。然而,該薄膜呈現來自碳元素之黃金色,不適合要求實質上無色之用途。另一方面,若向通式(化1)所示之有機矽烷系化合物中添加適量氧化氣體,則獲得之薄膜可除Si及C以外進而包含氧(O)作為構成元素,於阻氣性處於實用範圍之狀態下獲得實質上無色之薄膜。進而,藉由使用Ta或碳化鉭(TaCz)作為發熱體,而可效率較佳並穩定地形成實質上無色且具有阻氣性之薄膜。 In the present embodiment, the reason why the oxidizing gas is supplied together with the organodecane compound represented by the formula (Chemical Formula 1) is as follows. When only the organodecane compound represented by the formula (Chemical Formula 1) is supplied, the obtained film mainly contains cerium (Si) and carbon (C) as constituent elements, and the gas barrier property is extremely high. However, the film exhibits a gold color from carbon and is not suitable for applications requiring substantially colorlessness. On the other hand, when an appropriate amount of oxidizing gas is added to the organodecane-based compound represented by the formula (Chemical Formula 1), the obtained film can contain oxygen (O) as a constituent element in addition to Si and C, and is in a gas barrier property. A substantially colorless film is obtained in a practical range. Further, by using Ta or tantalum carbide (TaC z ) as a heat generating body, a film which is substantially colorless and has gas barrier properties can be formed efficiently and stably.

較佳為將阻氣薄膜中O之含量相對於Si、C及O之合計含量的比({O[at.%]/(Si+C+O)[at.%]}×100)設為30~70%。更佳為40~60%。由於作為氧化氣體之二氧化碳與氧氣相比氧化力較穩定,故而就可容易地控制薄膜中之氧元素之含量而穩定地獲得實質上無色且具有較高之阻氣性的阻氣薄膜方面而言,尤其優異。 It is preferable to set the ratio of the content of O in the gas barrier film to the total content of Si, C, and O ({O[at.%]/(Si+C+O)[at.%]}×100). 30~70%. More preferably 40~60%. Since the oxidizing gas as the oxidizing gas is more stable than the oxygen, the gas content in the film can be easily controlled to stably obtain a gas barrier film which is substantially colorless and has high gas barrier properties. Especially excellent.

阻氣薄膜除Si、C及O以外,亦可包含Ta(鉭)等來自發熱體之金屬元素、H(氫)、N(氮)等其他元素。 The gas barrier film may contain, in addition to Si, C, and O, other elements such as a metal element derived from a heating element such as Ta (tan), H (hydrogen), and N (nitrogen).

利用本實施形態之製造方法形成之阻氣性塑膠成形體實質上無色且具有較高之阻氣性,因此適合受氧等之影響而容易劣化且較佳為可目視內容物之內容物,具體例為食品、藥品、醫藥品、電子零件之包裝用途。 Since the gas barrier plastic molded article formed by the production method of the present embodiment is substantially colorless and has high gas barrier properties, it is suitable for being easily deteriorated by the influence of oxygen or the like, and is preferably a content of a visually visible content, specifically Examples are packaging applications for food, medicine, pharmaceuticals, and electronic parts.

於本實施形態之阻氣性塑膠成形體之製造方法中,較佳為於成膜步驟後具有向環境中供給氧化氣體並加熱發熱體之發熱體18之再生步驟。若使用有機矽烷系化合物作為原 料氣體並使用氧化氣體作為添加氣體而重複進行成膜步驟,則存在進行30次左右時發熱體18之表面進行碳化而阻氣薄膜92之阻氣性降低的情形。作為其對策,較佳為實施自發熱體18之表面去除碳成分之發熱體18之再生步驟。發熱體18之再生步驟藉由於調整為特定壓力之真空腔室6內使氧化氣體接觸發熱之發熱體18,而可自發熱體18之表面容易地去除碳成分,從而可抑制連續成膜後之阻氣薄膜92之阻氣性之降低。發熱體18之再生步驟較佳為於供給氧化氣體後使發熱體18發熱。氧化氣體較佳為二氧化碳。發熱體18之再生步驟可每進行1次成膜步驟而進行或於進行複數次成膜步驟後進行。又,發熱體18之再生步驟較佳為於成膜步驟後且自真空腔室6取出塑膠成形體後進行。 In the method for producing a gas barrier plastic molded article of the present embodiment, it is preferred to have a regeneration step of supplying the oxidizing gas to the environment and heating the heat generating body 18 after the film forming step. If an organic decane compound is used as the original When the film forming step is repeated using the oxidizing gas as the additive gas, the surface of the heating element 18 is carbonized and the gas barrier properties of the gas barrier film 92 are lowered. As a countermeasure, it is preferable to carry out a regeneration step of the heating element 18 that removes the carbon component from the surface of the heating element 18. The regeneration step of the heating element 18 can easily remove the carbon component from the surface of the heating element 18 by the heat generating body 18 in which the oxidizing gas contacts the heat in the vacuum chamber 6 adjusted to a specific pressure, thereby suppressing the continuous film formation. The gas barrier properties of the gas barrier film 92 are lowered. The regeneration step of the heating element 18 is preferably such that the heating element 18 generates heat after the supply of the oxidizing gas. The oxidizing gas is preferably carbon dioxide. The regeneration step of the heating element 18 can be carried out every one film formation step or after a plurality of film formation steps. Further, the step of regenerating the heating element 18 is preferably performed after the film forming step and after the plastic molded body is taken out from the vacuum chamber 6.

於發熱體18之再生步驟中,發熱體18之加熱溫度較佳為1900℃以上且2500℃以下。更佳為2000℃以上且2400℃以下。加熱時間較佳為成膜時間之0.5倍以上且3.0倍以下。又,於供給之氧化氣體為二氧化碳之情形時,發熱體18之再生步驟中真空腔室內之壓力(以下,亦存在稱為再生時之真空壓之情形)較佳為1.3 Pa以上且未達14 Pa。更佳為1.4 Pa以上且13 Pa以下。再生時之真空壓較佳為相對於成膜時之真空腔室內之原料氣體33之分壓(以下,亦存在稱為成膜時之原料氣體之分壓之情形)為超過1倍且為9倍以下。再生時之真空壓為成膜時之原料氣體之分壓之1倍以下時,存在如下情形:碳化物之堆積速度超過去除速度,於在複數個成形體上連續成膜時,後半成膜者之阻氣性低 於前半成膜者之阻氣性。又,若再生時之真空壓超過成膜時之原料氣體之分壓之9倍,則存在如下情形:碳化物去除並且發熱體18之表面產生氧化,氧化成分混入阻氣薄膜中或由蒸發引起發熱體18之消耗等,因此於連續成膜時後半成膜者之阻氣性降低。再者,發熱體18之再生步驟中氧化氣體向真空腔室6內之供給路徑可設置為與成膜步驟中之原料氣體之供給路徑相同,或與原料氣體之供給路徑不同。 In the regeneration step of the heating element 18, the heating temperature of the heating element 18 is preferably 1900 ° C or higher and 2500 ° C or lower. More preferably, it is 2000 ° C or more and 2400 ° C or less. The heating time is preferably 0.5 times or more and 3.0 times or less of the film formation time. Further, when the oxidizing gas to be supplied is carbon dioxide, the pressure in the vacuum chamber in the regeneration step of the heating element 18 (hereinafter, there is also a case where the vacuum pressure is called regeneration) is preferably 1.3 Pa or more and less than 14 Pa. More preferably, it is 1.4 Pa or more and 13 Pa or less. The vacuum pressure at the time of regeneration is preferably more than 1 time and 9 times with respect to the partial pressure of the material gas 33 in the vacuum chamber at the time of film formation (hereinafter, there is also a case where the partial pressure of the material gas at the time of film formation). Less than the following. When the vacuum pressure at the time of regeneration is less than or equal to the partial pressure of the material gas at the time of film formation, there is a case where the deposition rate of the carbide exceeds the removal rate, and when the film is continuously formed on a plurality of formed bodies, the latter half of the film is formed. Low gas barrier The gas barrier property of the first half of the film. Further, if the vacuum pressure at the time of regeneration exceeds 9 times the partial pressure of the material gas at the time of film formation, there is a case where the carbide is removed and the surface of the heat generating body 18 is oxidized, and the oxidized component is mixed into the gas barrier film or caused by evaporation. Since the heating element 18 is consumed or the like, the gas barrier property of the latter half of the film formation is lowered at the time of continuous film formation. Further, in the regeneration step of the heating element 18, the supply path of the oxidizing gas into the vacuum chamber 6 may be set to be the same as the supply path of the material gas in the film forming step or different from the supply path of the material gas.

繼而,關於重複成膜步驟時阻氣薄膜之阻氣性降低之原理、及發熱體18之再生步驟之效果,以發熱體為純度99.5質量%之金屬鉭且將其加熱至2000℃並連續100次重複進行成膜步驟的情形為例進行說明。此處,發熱體之表面之分析係使用掃描型電子顯微鏡(日立製作所公司製造,SU1510)觀察距發熱體之表面深度1 μm之元素組成,並使用該裝置配套之能量分散型X射線分析裝置(堀場製作所公司製造,EMAX ENERGY)進行。確認碳之元素濃度相對於成膜前未達1 at.%,於連續100次重複成膜步驟後最大增加至50 at.%。若將其進行質量換算,則成膜前未達0.13質量%,而連續100次重複成膜步驟後最大為6.2質量%。生成於發熱體表面之碳化物之電阻與形成發熱體中心部之金屬鉭之電阻相比,較大。因此,若發熱體之表面碳化,則該表面即便通電溫度亦難以上升。如此,存在無法確保對阻氣薄膜92之形成較為充分之溫度而無法獲得阻氣性較高之緻密之膜的情形。增加施加於發熱體18之電壓而使發熱 體之表面亦充分升溫,藉此,若為PET瓶之情形,則可形成可將阻氣性提高至10倍以上之阻氣薄膜92。然而,於量產步驟中,對應發熱體表面之急劇之電阻變化而調整施加電壓的控制較為複雜。因此,藉由進行發熱體18之再生步驟,而無需施加電壓之複雜之控制,即便連續進行成膜步驟,亦可不斷形成阻氣性較高之薄膜。 Then, regarding the principle of reducing the gas barrier properties of the gas barrier film at the time of repeating the film formation step and the effect of the regeneration step of the heating element 18, the heating element is a metal crucible having a purity of 99.5 mass% and heated to 2000 ° C for 100 consecutive times. The case where the film formation step is repeated is described as an example. Here, the surface of the heating element was analyzed by using a scanning electron microscope (SU1510, manufactured by Hitachi, Ltd.) to observe an elemental composition having a surface depth of 1 μm from the surface of the heating element, and using the energy dispersive X-ray analyzer of the apparatus ( Manufactured by Horiba Manufacturing Co., Ltd., EMAX ENERGY). It was confirmed that the elemental concentration of carbon was less than 1 at.% with respect to film formation, and the maximum increase was 50 at.% after 100 consecutive film formation steps. When this was converted into mass, it was not 0.13 mass% before film formation, and it was 6.2 mass% after repeating film formation process 100 times continuously. The electric resistance of the carbide formed on the surface of the heating element is larger than the electric resistance of the metal crucible forming the central portion of the heating element. Therefore, if the surface of the heating element is carbonized, the surface does not easily rise even when the temperature is applied. As described above, there is a case where it is impossible to ensure a sufficient temperature for the formation of the gas barrier film 92, and a dense film having a high gas barrier property cannot be obtained. Increasing the voltage applied to the heating element 18 to cause heat The surface of the body is also sufficiently heated, whereby in the case of a PET bottle, a gas barrier film 92 capable of improving gas barrier properties by 10 times or more can be formed. However, in the mass production step, the control for adjusting the applied voltage corresponding to the sharp resistance change of the surface of the heating element is complicated. Therefore, by performing the regeneration step of the heating element 18, it is not necessary to apply complicated control of the voltage, and even if the film forming step is continuously performed, a film having a high gas barrier property can be continuously formed.

[實施例] [Examples]

繼而,一面例示實施例一面關於本發明進而詳細地進行說明,但本發明並不限定於實施例而解釋。 Hereinafter, the present invention will be described in detail with reference to the embodiments, but the invention is not limited by the examples.

(實施例1) (Example 1)

作為塑膠成形體,於500 ml之PET瓶(高度133 mm、主體外徑64 mm、口部外徑24.9 mm、口部內徑21.4 mm、壁厚300 μm及樹脂量29 g)之內表面,使用圖1所示之成膜裝置形成阻氣薄膜。自氣體流量調整器24a~24c至氣體供給口16之配管係由氧化鋁製之1/4英吋配管構成。將PET瓶收容於真空腔室6內並減壓至達到1.0 Pa。繼而,作為發熱體18,使用2條Φ 0.5 mm、長度44 cm之鉭線,對發熱體18施加直流電流25 V而使其發熱至2000℃。其後,自氣體流量調整器24a將乙烯基矽烷作為原料氣體而以流量為50 sccm之方式進行供給,並於供給原料氣體之同時,自氣體流量調整器24b將二氧化碳作為添加氣體以流量為30 sccm之方式進行供給,從而於PET瓶之內表面堆積薄膜。成膜時之壓力(全壓)設置為6 Pa,成膜時間設置為6秒。此時,乙烯基矽烷之分壓(成膜時之原料氣體之分壓)為1.4 Pa。膜厚 為30 nm。再者,膜厚係使用觸針式輪廓儀(型式:α-Step,KLA-Tencor公司製造)測定之值。 As a plastic molded body, it is used on the inner surface of a 500 ml PET bottle (having a height of 133 mm, a main body outer diameter of 64 mm, a mouth outer diameter of 24.9 mm, a mouth inner diameter of 21.4 mm, a wall thickness of 300 μm, and a resin amount of 29 g). The film forming apparatus shown in Fig. 1 forms a gas barrier film. The piping from the gas flow rate adjusters 24a to 24c to the gas supply port 16 is composed of a 1/4 inch pipe made of alumina. The PET bottle was housed in the vacuum chamber 6 and depressurized to 1.0 Pa. Then, as the heating element 18, two Φ lines of Φ 0.5 mm and 44 cm in length were used, and a direct current of 25 V was applied to the heating element 18 to generate heat to 2000 °C. Then, the gas flow rate adjuster 24a supplies vinyl decane as a material gas at a flow rate of 50 sccm, and supplies a raw material gas, and uses carbon dioxide as an additive gas from the gas flow rate adjuster 24b at a flow rate of 30. The sccm is supplied in a manner to deposit a film on the inner surface of the PET bottle. The pressure at the time of film formation (full pressure) was set to 6 Pa, and the film formation time was set to 6 seconds. At this time, the partial pressure of the vinyl decane (the partial pressure of the material gas at the time of film formation) was 1.4 Pa. Film thickness It is 30 nm. Further, the film thickness was measured using a stylus profiler (type: α-Step, manufactured by KLA-Tencor Co., Ltd.).

(實施例2) (Example 2)

於實施例1中,除將添加氣體之供給量設置為10 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the supply amount of the additive gas was set to 10 sccm.

(實施例3) (Example 3)

於實施例1中,除將添加氣體之供給量設置為20 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the supply amount of the additive gas was set to 20 sccm.

(實施例4) (Example 4)

於實施例1中,除將添加氣體之供給量設置為50 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the supply amount of the additive gas was set to 50 sccm.

(實施例5) (Example 5)

於實施例1中,除將添加氣體之供給量設置為100 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the supply amount of the additive gas was set to 100 sccm.

(實施例6) (Example 6)

於實施例1中,除以氧氣代替二氧化碳作為添加氣體,並將添加氣體之供給量設置為5 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。此處,為使阻氣薄膜之膜厚成為30 nm所需之成膜時間為6秒。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that oxygen was used instead of carbon dioxide as the additive gas, and the supply amount of the additive gas was set to 5 sccm. Here, the film formation time required to make the film thickness of the gas barrier film to 30 nm was 6 seconds.

(實施例7) (Example 7)

於實施例6中,除將添加氣體之供給量設置為6 sccm以外,按照實施例6於PET瓶之內表面形成薄膜。 In Example 6, a film was formed on the inner surface of the PET bottle in accordance with Example 6, except that the supply amount of the additive gas was set to 6 sccm.

(實施例8) (Example 8)

於實施例6中,除將添加氣體之供給量設置為25 sccm以 外,按照實施例6於PET瓶之內表面形成薄膜。 In Example 6, except that the supply amount of the additive gas was set to 25 sccm. Further, a film was formed on the inner surface of the PET bottle in accordance with Example 6.

(實施例9) (Example 9)

於實施例6中,除將添加氣體之供給量設置為50 sccm以外,按照實施例6於PET瓶之內表面形成薄膜。 In Example 6, a film was formed on the inner surface of the PET bottle in accordance with Example 6, except that the supply amount of the additive gas was set to 50 sccm.

(實施例10) (Embodiment 10)

於實施例1中,除將薄膜之膜厚設置為5 nm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the film thickness of the film was set to 5 nm.

(實施例11) (Example 11)

於實施例1中,除將薄膜之膜厚設置為82 nm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the film thickness of the film was set to 82 nm.

(實施例12) (Embodiment 12)

於實施例1中,除以二氧化碳與氧氣以9:1混合之混合氣體代替二氧化碳作為添加氣體以外,按照實施例1於PET瓶之內表面形成薄膜。於表1中,添加氣體之供給量記為二氧化碳與氧氣之混合氣體之供給量。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that a mixed gas of carbon dioxide and oxygen mixed at 9:1 was used instead of carbon dioxide as the additive gas. In Table 1, the supply amount of the additive gas is referred to as the supply amount of the mixed gas of carbon dioxide and oxygen.

(實施例13) (Example 13)

於實施例1中,除以乙烯基矽烷與乙炔以1:1混合之混合氣體代替乙烯基矽烷作為原料氣體以外,按照實施例1於PET瓶之內表面形成薄膜。於表1中,原料氣體之供給量記為乙烯基矽烷與乙炔之混合氣體之供給量。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that a mixed gas of vinyl decane and acetylene was mixed in a ratio of 1:1 instead of vinyl decane as a material gas. In Table 1, the supply amount of the material gas is referred to as the supply amount of the mixed gas of vinyl decane and acetylene.

(實施例14) (Example 14)

於實施例1中,除以二矽丁烷代替乙烯基矽烷作為原料氣體,且以氧氣代替二氧化碳作為添加氣體,並將添加氣體之供給量設置為5 sccm以外,按照實施例1於PET瓶之內 表面形成薄膜。此處,為使阻氣薄膜之膜厚成為30 nm所需之成膜時間為8秒。 In Example 1, except that dioxane was used instead of vinyl decane as a raw material gas, and carbon dioxide was used as an additive gas instead of carbon dioxide, and the supply amount of the additive gas was set to 5 sccm, the PET bottle according to Example 1 was used. Inside The surface forms a film. Here, the film formation time required to make the film thickness of the gas barrier film to 30 nm was 8 seconds.

(實施例15) (Example 15)

於實施例1中,除將添加氣體之供給量設置為3 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the supply amount of the additive gas was set to 3 sccm.

(實施例16) (Embodiment 16)

於實施例1中,除將添加氣體之供給量設置為130 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that the supply amount of the additive gas was set to 130 sccm.

(實施例17) (Example 17)

於實施例1中,除以氧氣代替二氧化碳作為添加氣體,並將添加氣體之供給量設置為2 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that oxygen was used instead of carbon dioxide as the additive gas, and the supply amount of the additive gas was set to 2 sccm.

(實施例18) (Embodiment 18)

於實施例1中,除以氧氣代替二氧化碳作為添加氣體,並將添加氣體之供給量設置為65 sccm以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1, except that oxygen was used instead of carbon dioxide as the additive gas, and the supply amount of the additive gas was set to 65 sccm.

(實施例19) (Embodiment 19)

於實施例1中,除將熱觸媒體替換為TaCx(X=1,TaCx中之碳原子之質量比為6.2質量%,TaCx中之碳原子之元素濃度為50 at.%)以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, except that the thermal contact medium was replaced by TaC x (X=1, the mass ratio of carbon atoms in TaC x was 6.2% by mass, and the elemental concentration of carbon atoms in TaC x was 50 at.%). A film was formed on the inner surface of the PET bottle in accordance with Example 1.

(比較例1) (Comparative Example 1)

於實施例1中,除不供給添加氣體以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle in accordance with Example 1 except that the additive gas was not supplied.

(比較例2) (Comparative Example 2)

於實施例1中,除以單甲基矽烷與乙炔以1:1混合之混合氣體代替乙烯基矽烷作為原料氣體,且不供給添加氣體以外,按照實施例1於PET瓶之內表面形成薄膜。 In Example 1, a film was formed on the inner surface of the PET bottle according to Example 1, except that a mixed gas of monomethyl decane and acetylene was mixed in a ratio of 1:1 instead of vinyl decane as a material gas, and no additive gas was supplied.

(比較例3) (Comparative Example 3)

於比較例2中,除供給30 sccm之二氧化碳作為添加氣體以外,按照比較例2於PET瓶之內表面形成薄膜。 In Comparative Example 2, a film was formed on the inner surface of the PET bottle in accordance with Comparative Example 2, except that carbon dioxide of 30 sccm was supplied as the additive gas.

(比較例4) (Comparative Example 4)

於實施例1中,除以銥線取代鉭線作為發熱體以外,按照實施例1於PET瓶之內表面形成薄膜,但不可增加薄膜之膜厚,膜厚未達3 nm。 In Example 1, a film was formed on the inner surface of the PET bottle in the same manner as in Example 1 except that the twisted wire was used as the heat generating body, but the film thickness of the film was not increased, and the film thickness was less than 3 nm.

關於獲得之實施例及比較例之具有阻氣薄膜之PET瓶,利用以下方法進行評價。將評價結果示於表1。 The PET bottles having the gas barrier films of the obtained examples and comparative examples were evaluated by the following methods. The evaluation results are shown in Table 1.

(透明性評價-b*值) (Transparency evaluation - b * value)

b*值係使用於日立製U-3900型自記分光光度計上安裝有該公司製造之60Φ積分球配套裝置(紅外線、可見光、近紅外線用)者進行測定。檢測器係使用超高感度光電子倍增管(R928:紫外線、可見光用)及冷卻型PbS(近紅外線區用)。測定波長係於自240 nm至840 nm之範圍內測定穿透率。測定位置設置為距PET瓶之底面60 mm之位置。藉由測定PET瓶之穿透率,而可算出僅阻氣薄膜之穿透率測定,但本實施例之b*值係直接表示以包括PET瓶之吸收率之形式而算出者。再者,本發明中之b*與目視之關係大致如表2所示。未形成薄膜之PET瓶之b*值係於0.6~1.0之範圍內。透明性評價之判定基準如下。 The b * value is measured by using a 60 Φ integrating sphere matching device (infrared, visible, and near infrared rays) manufactured by the company on a U-3900 self-recording spectrophotometer. The detector uses an ultra-high sensitivity photomultiplier tube (R928: for ultraviolet light and visible light) and a cooled PbS (for near-infrared region). The measurement wavelength was measured in the range from 240 nm to 840 nm. The measurement position was set to be 60 mm from the bottom of the PET bottle. The transmittance measurement of only the gas barrier film can be calculated by measuring the transmittance of the PET bottle, but the b * value of the present embodiment is directly expressed as a form including the absorption rate of the PET bottle. Further, the relationship between b * and visual observation in the present invention is roughly as shown in Table 2. The b * value of the PET bottle without film formation is in the range of 0.6 to 1.0. The criteria for the evaluation of transparency are as follows.

透明性評價之判定基準:◎:b*值為2以下(實用水平),○:b*值超過2且為4以下(實用水平),△:b*值超過4且為6以下(最低實用水平),×:b*值超過6(不實用水平)。 Judgment criteria for transparency evaluation: ◎: b * value is 2 or less (practical level), ○: b * value exceeds 2 and is 4 or less (practical level), and Δ: b * value exceeds 4 and is 6 or less (minimum practical) Horizontal), ×: b * value exceeds 6 (not practical level).

(阻氣性評價-BIF) (Gas Resistance Evaluation - BIF)

BIF係於數2中將實施例或比較例中所獲得之PET瓶之氧穿透度之值作為「阻氣性塑膠成形體之氧穿透度」,將未形成薄膜之PET瓶之氧穿透度作為「未形成薄膜之塑膠成 形體之氧穿透度」而算出。氧穿透度係使用氧穿透度測定裝置(型式:Oxtran 2/20,Modern Control公司製造)於23℃、90% RH之條件下進行測定,並自測定開始調節24小時,取自測定開始經過72小時後之值。再者,未形成薄膜之PET瓶之氧穿透度為0.0350 cc/容器/天。阻氣性評價之判定基準如下。 BIF is the value of the oxygen permeability of the PET bottle obtained in the example or the comparative example as the "oxygen permeability of the gas barrier plastic molded body" in the number 2, and the oxygen of the PET bottle which is not formed into a film is worn. Permeability as "plastic film without film formation" Calculated by the oxygen permeability of the body. Oxygen permeability was measured using an oxygen permeability measuring apparatus (type: Oxtran 2/20, manufactured by Modern Control Co., Ltd.) under the conditions of 23 ° C and 90% RH, and was adjusted from the start of measurement for 24 hours from the start of the measurement. After 72 hours, the value. Further, the PET bottle which did not form a film had an oxygen permeability of 0.0350 cc / container / day. The criteria for determining the gas barrier properties are as follows.

阻氣性評價之判定基準:◎:BIF為8以上(實用水平),○:BIF為5以上且未達8(實用水平),△:BIF為2以上且未達5(最低實用水平),×:BIF未達2(不實用水平)。 Judgment criteria for gas barrier evaluation: ◎: BIF is 8 or more (practical level), ○: BIF is 5 or more and less than 8 (practical level), and Δ: BIF is 2 or more and less than 5 (lowest practical level). ×: BIF is less than 2 (not practical level).

(綜合判定) (Comprehensive judgment)

綜合判定係將於上述透明性判定及阻氣性判定之任一項目中均無×者作為具有實用水平者而記作○,又,將於任一項目中有×者作為無實用水平者而記作×。 In the case of the above-mentioned transparency determination and gas barrier determination, none of the items of the above-mentioned transparency determination and gas barrier determination is recorded as ○ as a practical level, and × as a non-practical level in any of the items. Recorded as ×.

如表1所示,實施例1~實施例19之薄膜均為著色度為實用水平,且為可稱為實質上無色之水平。進而,實施例1~實施例19之薄膜均為具有阻氣性之薄膜。實施例1~實施例3之BIF為9以上,且b*值為3以下,阻氣性及透明性優異。其中,於實施例1~3中,實施例1之b*值最小,具有尤其高之透明性。雖然實施例4及實施例5之b*值為2以下而透明性進而較佳,但BIF未達5,與實施例1~實施例3相比阻氣性較低。實施例6~實施例9由於使用氧氣作為氧化氣體,故而與使用二氧化碳氣體作為氧化氣體之實施例1~實施例 5相比,BIF相對於氧化氣體之供給量之變化量急劇。由此,可確認作為氧化氣體之二氧化碳就容易控制方面而言優於氧。 As shown in Table 1, the films of Examples 1 to 19 have a degree of coloration which is a practical level and is a level which can be said to be substantially colorless. Further, the films of Examples 1 to 19 are all films having gas barrier properties. The BIF of Examples 1 to 3 is 9 or more, and the b * value is 3 or less, and is excellent in gas barrier properties and transparency. Among them, in Examples 1 to 3, Example 1 had the smallest b * value and particularly high transparency. Although the b * values of Examples 4 and 5 are 2 or less and the transparency is further preferable, the BIF is less than 5, and the gas barrier properties are lower than those of Examples 1 to 3. In Examples 6 to 9, since oxygen gas was used as the oxidizing gas, the amount of change in the amount of supply of BIF to the oxidizing gas was sharper than in Examples 1 to 5 in which carbon dioxide gas was used as the oxidizing gas. From this, it was confirmed that carbon dioxide as an oxidizing gas is superior to oxygen in terms of control.

實施例10由於阻氣薄膜之膜厚薄於實施例1之膜厚,故而阻氣性低於實施例1,但透明性優於實施例1。實施例11由於阻氣薄膜之膜厚厚於實施例1之膜厚,故而透明性低於實施例1,但阻氣性高於實施例1。實施例12使用氧化氣體之混合氣體作為添加氣體但可形成具有實用水平之薄膜。實施例13使用混合有副原料氣體者作為原料氣體但可獲得具有實用水平之薄膜。實施例14使用二矽丁烷作為原料氣體但可獲得具有實用水平之薄膜。若比較實施例6與實施例14,則形成相同膜厚所需之時間上實施例6較短,可確認乙烯基矽烷較二矽丁烷成膜效率高。 In Example 10, since the film thickness of the gas barrier film was thinner than that of Example 1, the gas barrier property was lower than that of Example 1, but the transparency was superior to that of Example 1. In the eleventh embodiment, since the film thickness of the gas barrier film was thicker than that of the first embodiment, the transparency was lower than that of the first embodiment, but the gas barrier property was higher than that of the first embodiment. Example 12 uses a mixed gas of an oxidizing gas as an additive gas but can form a film having a practical level. In Example 13, a person who mixed the auxiliary material gas was used as the material gas, but a film having a practical level was obtained. In Example 14, dioxane was used as a material gas, but a practical level film was obtained. When Comparative Example 6 and Example 14 were compared, the time required to form the same film thickness was as short as in Example 6, and it was confirmed that vinyl decane was more effective in forming film than dioxane.

若比較實施例19與實施例1,則由於獲得大致同等之透明性及阻氣性,故而可確認碳化鉭為與鉭同樣有用之發熱體。 Comparing Example 19 with Example 1, since substantially the same transparency and gas barrier properties were obtained, it was confirmed that strontium carbide is a heat generating body which is also useful as ruthenium.

比較例1由於未供給添加氣體,故而著色度為不實用水平。比較例2及3由於使用(化1)所示之有機矽烷系化合物以外之有機矽烷系化合物作為原料氣體,故而BIF為不實用。比較例4由於使用銥線作為發熱體,故而BIF為不實用。可認為其理由在於:成膜效率較差,無法增加阻氣薄膜之膜厚。 In Comparative Example 1, since the additive gas was not supplied, the chromaticity was an unpractical level. In Comparative Examples 2 and 3, since an organic decane-based compound other than the organodecane-based compound represented by (Chemical Formula 1) was used as a material gas, BIF was not practical. In Comparative Example 4, since the twisted wire was used as the heat generating body, BIF was not practical. The reason is considered to be that the film formation efficiency is poor and the film thickness of the gas barrier film cannot be increased.

繼而,進行用於確認發熱體18之再生步驟之效果的試驗。 Then, a test for confirming the effect of the regeneration step of the heating element 18 was performed.

(實施例20) (Embodiment 20)

按照實施例1進行100次成膜,每結束1次成膜即進行發熱體18之再生步驟。各再生步驟係於真空腔室6內之壓力到達1.0 Pa之真空壓時,將CO2作為氧化氣體供給至真空腔室6而使真空壓成為12.5 Pa(成膜時之原料氣體之分壓為1.4 Pa,因此為其9倍之真空壓),將發熱體18以2000℃加熱6秒。 The film formation was carried out 100 times in accordance with Example 1, and the regeneration step of the heating element 18 was carried out every time the film formation was completed. In each regeneration step, when the pressure in the vacuum chamber 6 reaches a vacuum pressure of 1.0 Pa, CO 2 is supplied as an oxidizing gas to the vacuum chamber 6 so that the vacuum pressure becomes 12.5 Pa (the partial pressure of the material gas at the time of film formation is 1.4 Pa, therefore 9 times its vacuum pressure, the heating element 18 was heated at 2000 ° C for 6 seconds.

(實施例21) (Example 21)

按照實施例1進行100次成膜,每結束10次成膜即進行發熱體18之再生步驟。各再生步驟除將發熱體18之加熱時間設置為60秒以外,以與實施例20相同之條件進行。 The film formation was carried out 100 times in accordance with Example 1, and the regeneration step of the heating element 18 was carried out every 10 times of film formation. Each regeneration step was carried out under the same conditions as in Example 20 except that the heating time of the heating element 18 was set to 60 seconds.

(實施例22) (Example 22)

按照實施例19進行100次成膜,每結束1次成膜即進行發熱體18之再生步驟。各再生步驟以與實施例20相同之條件進行。 Film formation was carried out 100 times in accordance with Example 19, and the regeneration step of the heating element 18 was carried out every time the film formation was completed. Each regeneration step was carried out under the same conditions as in Example 20.

(實施例23) (Example 23)

按照實施例19進行100次成膜,每結束10次成膜即進行發熱體18之再生步驟。各再生步驟以與實施例21相同之條件進行。 Film formation was carried out 100 times in accordance with Example 19, and the regeneration step of the heating element 18 was carried out every 10 times of film formation. Each regeneration step was carried out under the same conditions as in Example 21.

(實施例24) (Example 24)

於實施例20中,除將CO2供給至真空腔室6而使真空壓成為1.4 Pa(成膜時之原料氣體之分壓1.4 Pa的1.0倍之真空壓)以外,以與實施例20相同之條件進行發熱體18之再生步驟。 In the embodiment 20, the same as in the embodiment 20 except that the CO 2 is supplied to the vacuum chamber 6 so that the vacuum pressure becomes 1.4 Pa (the vacuum pressure of 1.0 Pa of the partial pressure of the material gas at the time of film formation). The regeneration step of the heating element 18 is performed under the conditions.

(實施例25) (Embodiment 25)

於實施例20中,除將CO2供給至真空腔室6而使真空壓成為1.3 Pa(成膜時之原料氣體之分壓1.4 Pa的0.93倍之真空壓)以外,以與實施例20相同之條件進行發熱體18之再生步驟。 In Example 20, except that the CO 2 is supplied to the vacuum chamber 6 so that the vacuum pressure became 1.3 Pa (when the film-forming raw material gas of a partial pressure of 1.4 Pa vacuum pressure of 0.93 times) than, the same as in Example 20 The regeneration step of the heating element 18 is performed under the conditions.

(參考例1) (Reference example 1)

於實施例20中,除將CO2供給至真空腔室6而使真空壓成為14 Pa(成膜時之原料氣體之分壓1.4 Pa的10.0倍之真空壓)以外,以與實施例20相同之條件進行發熱體18之再生步驟。 In Example 20, except that the CO 2 is supplied to the vacuum chamber 6 so that the vacuum pressure became 14 Pa (feed time points of the deposition gas pressure of 1.4 Pa vacuum pressure of 10.0 times) than, the same as in Example 20 The regeneration step of the heating element 18 is performed under the conditions.

(參考例2) (Reference example 2)

按照實施例1進行100次成膜且不進行發熱體18之再生步驟。 The film formation was carried out 100 times in accordance with Example 1, and the regeneration step of the heating element 18 was not performed.

(參考例3) (Reference Example 3)

按照實施例19進行100次成膜且不進行發熱體18之再生步驟。 The film formation was carried out 100 times in accordance with Example 19, and the regeneration step of the heating element 18 was not performed.

(BIF測定) (BIF measurement)

關於實施例20~實施例25及參考例1~參考例3,分別測定第1次及第100次成膜之BIF。BIF之測定方法及判定基準設為「阻氣性評價-BIF」所記載之方法。將BIF之測定結果示於3。 With respect to Examples 20 to 25 and Reference Examples 1 to 3, the BIF of the first and 100th film formation was measured. The measurement method and the criterion of the BIF are referred to as the method described in "Gas Resistance Evaluation - BIF". The measurement result of BIF is shown at 3.

由圖3可知,實施例20~實施例25均為第1次及第100次之BIF均為實用水平。尤其是,實施例20~實施例24均為第1次及第100次之成膜中並無阻氣性之顯著差異,且第100次 之BIF為8以上。實施例25由於再生時之真空壓低於成膜時之原料氣體之分壓,故而第100次之BIF為5.8但維持實用水平。與此相對,參考例1~參考例3於第1次之成膜時阻氣性良好,但於第100次之成膜時阻氣性大幅降低。參考例1進行了發熱體18之再生步驟,但可認為由於再生時之真空壓過高,故而發熱體之表面發生氧化而連續成膜後之阻氣性降低。由上可確認藉由進行發熱體之再生步驟而連續成膜適應性提高。 As can be seen from Fig. 3, in the examples 20 to 25, the first and the 100th BIFs are all practical levels. In particular, in Examples 20 to 24, there was no significant difference in gas barrier properties between the first and the 100th film formation, and the 100th time The BIF is 8 or more. In Example 25, since the vacuum pressure at the time of regeneration was lower than the partial pressure of the material gas at the time of film formation, the BIF of the 100th time was 5.8, but the practical level was maintained. On the other hand, in Reference Example 1 to Reference Example 3, the gas barrier properties were good at the time of film formation in the first time, but the gas barrier properties were largely lowered at the time of film formation at the 100th time. In the reference example 1, the step of regenerating the heating element 18 was carried out. However, it is considered that the vacuum pressure at the time of regeneration is too high, so that the surface of the heating element is oxidized, and the gas barrier properties after continuous film formation are lowered. From the above, it was confirmed that the film formation adaptability was improved by performing the regeneration step of the heating element.

[產業上之可利用性] [Industrial availability]

本發明之阻氣性塑膠成形體適用於包裝材料。又,包括本發明之阻氣性塑膠成形體之阻氣性容器適用於水、茶飲料、清涼飲料、碳酸飲料、果汁飲料等之飲料用容器。 The gas barrier plastic molded article of the present invention is suitable for use in packaging materials. Moreover, the gas barrier container including the gas barrier plastic molded article of the present invention is suitable for use in a beverage container for water, tea beverage, refreshing beverage, carbonated beverage, fruit juice beverage, and the like.

6‧‧‧真空腔室 6‧‧‧vacuum chamber

8‧‧‧真空閥門 8‧‧‧Vacuum valve

11‧‧‧塑膠容器 11‧‧‧Plastic containers

12‧‧‧反應室 12‧‧‧Reaction room

13‧‧‧下腔室 13‧‧‧ lower chamber

14‧‧‧O型環 14‧‧‧O-ring

15‧‧‧上腔室 15‧‧‧Upper chamber

16‧‧‧氣體供給口 16‧‧‧ gas supply port

17‧‧‧原料氣體流路 17‧‧‧Material gas flow path

17x‧‧‧氣體噴出孔 17x‧‧‧ gas ejection hole

18‧‧‧發熱體 18‧‧‧heating body

19‧‧‧佈線 19‧‧‧Wiring

20‧‧‧加熱電源 20‧‧‧heating power supply

21‧‧‧塑膠容器之口部 21‧‧‧ mouth of plastic container

22‧‧‧排氣管 22‧‧‧Exhaust pipe

23‧‧‧原料氣體供給管 23‧‧‧Material gas supply pipe

24a、24b、24c‧‧‧流量調整器 24a, 24b, 24c‧‧‧ flow adjusters

25a、25b、25c、25d‧‧‧閥門 25a, 25b, 25c, 25d‧‧‧ valves

26a、26b‧‧‧連接部 26a, 26b‧‧‧ Connections

27‧‧‧冷卻水流路 27‧‧‧Cooling water flow path

28‧‧‧真空腔室之內面 28‧‧‧ Inside the vacuum chamber

29‧‧‧冷卻裝置 29‧‧‧Cooling device

30‧‧‧包括透明體之腔室 30‧‧‧Case including transparent body

33‧‧‧原料氣體 33‧‧‧Material gases

34‧‧‧化學種 34‧‧‧Chemical species

35‧‧‧絕緣陶瓷構件 35‧‧‧Insulated ceramic components

40a‧‧‧原料槽 40a‧‧‧Material tank

41a‧‧‧起始原料 41a‧‧‧ starting materials

42a、42b、42c‧‧‧儲氣瓶 42a, 42b, 42c‧‧‧ gas cylinders

90‧‧‧阻氣性塑膠成形體 90‧‧‧ gas barrier plastic molded body

91‧‧‧塑膠成形體 91‧‧‧plastic molded body

92‧‧‧阻氣薄膜 92‧‧‧ gas barrier film

100‧‧‧成膜裝置 100‧‧‧ film forming device

圖1係表示成膜裝置之一形態之概略圖。 Fig. 1 is a schematic view showing one form of a film forming apparatus.

圖2係表示本實施形態之阻氣性塑膠成形體之一例的剖面圖。 Fig. 2 is a cross-sectional view showing an example of a gas barrier plastic molded body of the embodiment.

圖3係表示於發熱體之再生步驟之確認試驗中成膜第1次及第100次之BIF的圖。 Fig. 3 is a view showing the first and the 100th BIF of the film formation in the confirmation test of the heating step of the heating element.

Claims (8)

一種阻氣性塑膠成形體之製造方法,其係於塑膠成形體之表面形成阻氣薄膜之阻氣性塑膠成形體之製造方法,且其特徵在於包括以下成膜步驟:於上述塑膠成形體之表面,利用發熱體CVD法,使用通式(化1)所示之有機矽烷系化合物作為主要原料氣體,且使用氧化氣體作為添加氣體,且使用包含鉭(Ta)作為主要構成元素之發熱體,而形成上述阻氣薄膜,(化1)H3Si-Cn-X於化1中,n為2或3,X為SiH3、H或NH2A method for producing a gas barrier plastic molded body, which is a method for producing a gas barrier plastic molded body in which a gas barrier film is formed on a surface of a plastic molded body, and is characterized by comprising the following film forming step: in the above plastic molded body On the surface, an organic decane-based compound represented by the general formula (Chemical Formula 1) is used as a main raw material gas, and an oxidizing gas is used as an additive gas, and a heating element containing tantalum (Ta) as a main constituent element is used. On the other hand, the gas barrier film is formed, and in the case of H 3 Si-C n -X, n is 2 or 3, and X is SiH 3 , H or NH 2 . 如請求項1之阻氣性塑膠成形體之製造方法,其中上述有機矽烷系化合物為乙烯基矽烷。 The method for producing a gas barrier plastic molded article according to claim 1, wherein the organodecane compound is vinyl decane. 如請求項1或2之阻氣性塑膠成形體之製造方法,其中上述氧化氣體含有二氧化碳。 The method for producing a gas barrier plastic molded article according to claim 1 or 2, wherein the oxidizing gas contains carbon dioxide. 如請求項3之阻氣性塑膠成形體之製造方法,其中上述二氧化碳與上述有機矽烷系化合物之混合比為6:100~260:100。 The method for producing a gas barrier plastic molded article according to claim 3, wherein a mixing ratio of the carbon dioxide to the organic decane-based compound is from 6:100 to 260:100. 如請求項1或2之阻氣性塑膠成形體之製造方法,其中上述氧化氣體含有氧氣,且上述氧氣與上述有機矽烷系化合物之混合比為4:100~130:100。 The method for producing a gas barrier plastic molded article according to claim 1 or 2, wherein the oxidizing gas contains oxygen, and a mixing ratio of the oxygen gas to the organic decane-based compound is 4:100 to 130:100. 如請求項1之阻氣性塑膠成形體之製造方法,其中上述塑膠成形體為膜、片材或容器。 The method for producing a gas barrier plastic molded article according to claim 1, wherein the plastic molded body is a film, a sheet or a container. 如請求項1之阻氣性塑膠成形體之製造方法,其中上述發熱體為金屬鉭、鉭基合金或碳化鉭。 The method for producing a gas barrier plastic molded article according to claim 1, wherein the heat generating body is a metal ruthenium, a ruthenium-based alloy or tantalum carbide. 如請求項1之阻氣性塑膠成形體之製造方法,其中於上述成膜步驟後,具有向環境中供給氧化氣體並加熱發熱體之發熱體之再生步驟。 The method for producing a gas barrier plastic molded article according to claim 1, wherein after the film forming step, a regeneration step of supplying a oxidizing gas to the environment and heating the heat generating body is performed.
TW101123440A 2011-12-28 2012-06-28 Production method of gas barrier plastic molded body TWI537415B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/080399 WO2012091095A1 (en) 2010-12-28 2011-12-28 Method for producing gas barrier plastic molded body

Publications (2)

Publication Number Publication Date
TW201326449A true TW201326449A (en) 2013-07-01
TWI537415B TWI537415B (en) 2016-06-11

Family

ID=49226604

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101123440A TWI537415B (en) 2011-12-28 2012-06-28 Production method of gas barrier plastic molded body

Country Status (1)

Country Link
TW (1) TWI537415B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI850662B (en) * 2021-05-24 2024-08-01 美商應用材料股份有限公司 Systems and methods for medical packaging

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI850662B (en) * 2021-05-24 2024-08-01 美商應用材料股份有限公司 Systems and methods for medical packaging
US12347652B2 (en) 2021-05-24 2025-07-01 Applied Materials, Inc. Method for forming plasma coating

Also Published As

Publication number Publication date
TWI537415B (en) 2016-06-11

Similar Documents

Publication Publication Date Title
KR101523454B1 (en) Method for producing gas barrier plastic molded body
JP5894303B2 (en) Gas barrier plastic molded body and method for producing the same
JP5260050B2 (en) Gas barrier plastic container manufacturing apparatus and method for manufacturing the container
JP4372833B1 (en) Method for producing gas barrier thin film coated plastic container
JP6009243B2 (en) Carbonated beverage bottle and method for producing the same
TWI537415B (en) Production method of gas barrier plastic molded body
JP5706777B2 (en) Gas barrier plastic molding
CN107429392B (en) Gas barrier property plastic shaped body and its manufacturing method
JP5566334B2 (en) Gas barrier plastic molded body and method for producing the same
TWI576242B (en) Gas barrier plastic molded body and manufacturing method thereof
JP2004107689A (en) Diamond like carbon film deposition method and deposition system
JP2012122089A (en) Plastic molded body equipped with gas barrier thin film, and method for production thereof
JP5779044B2 (en) Control method of wettability
JP2012188700A (en) Gas barrier plastic molding and method for producing the same
JP2002331606A (en) Silicon oxide film

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees