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TW201319650A - Method of fabrication for an asymmetric Bragg coupler-based polymeric filter with a single-grating waveguide - Google Patents

Method of fabrication for an asymmetric Bragg coupler-based polymeric filter with a single-grating waveguide Download PDF

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TW201319650A
TW201319650A TW100141174A TW100141174A TW201319650A TW 201319650 A TW201319650 A TW 201319650A TW 100141174 A TW100141174 A TW 100141174A TW 100141174 A TW100141174 A TW 100141174A TW 201319650 A TW201319650 A TW 201319650A
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film
trench
silicone
photoresist
polymer
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TW100141174A
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TWI456276B (en
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Wei-Ching Chuang
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Univ Nat Formosa
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Abstract

The present invention discloses a Method of Fabrication for an asymmetric Bragg coupler-based polymeric filter with a single-grating waveguide. A negative photo-resist film is coated on a substrate and formed asymmetric negative waveguide pattern as a mold. This mold is subsequently used to produce a polydimethylsiloxane (PDMS) stamp with waveguide pattern. This PDMS stamp is then used to transfer the waveguide pattern onto UV polymeric cladding layer. The cladding layer is injected with waveguide cores and covered with upper cladding layer, finally the fabrication of asymmetric Bragg coupler-based polymeric filter is completed.

Description

具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法Method for manufacturing asymmetric Bragg coupling polymer filter with single grating waveguide

本發明係有關於一種具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,尤指一種製作單光柵波導之非對稱布拉格耦合聚合物過濾器的方法。The present invention relates to a method for fabricating an asymmetric Bragg coupling polymer filter having a single grating waveguide, and more particularly to a method for fabricating an asymmetric Bragg coupling polymer filter of a single grating waveguide.

眾所周知,光塞取多工器(Optical add/drop multiplexer,OADM)使得在光纖通訊中的特定波長可彈性地塞入或取出,已成為波長分割多工(wavelength division multiplexing,WDM)網路技術中不可或缺的元件。波長分割多工(WDM)存取技術已經被證明是為在光導纖維網路內的多媒體通訊全球傳播用以容納大量帶寬的一項關鍵技術。在基於波長分割多工(WDM)的網路中,光塞取多工器(OADM)被用來插入(增加)或擷取(下降)光纖通信系統中的一個特定波長是必要的。這些元件允許傳輸迴路中波長的擷取以及增加一些波長到網路中(如附件四參考文獻8)。已有許多基於光學波導的光補/光取架構被論證。這些包括基於光補/光取過濾器的Mach-Zehnder干涉計(MZI),光柵輔助同向耦合器,非對稱布拉格耦合器(ABC)(參考文獻8),以及布拉格反射器閘道波導過濾器。基於光補/光取過濾器的Mach-Zehnder干涉計產生良好的插入損失及頻道絕緣,它們可同時被建立在全光纖及積體光學平台上。不過,它們在實施時,對於干涉計的平衡以及二光柵的位置是極為敏感。因此,一些製造後的整體設計經常是必需的。目前所知,由二不相似波導及一長週期光柵所構成的光柵輔助同向耦合器,已經被廣泛討論以用作為波長過濾器。它具有長光柵週期(約幾十個釐米)的優點,使其使用標準的光蝕刻技術(photolithography)來製造變得容易,而且具有低的回反射特性,可避免不需要的光學共振。此裝置的主要不利點,是當它在小光譜帶寬中運轉時,需要長的交互作用的光柵長度(大約幾百個光柵週期)。因此,此裝置對於積體化是不具有效益的。布拉格反射器閘道波導過濾器具有良好的返回耗損及串音特性,以及天生的穩定。不過,因為它需要非交互的光學傳播而限制了其在積體光學格式中的應用。至於,非對稱布拉格耦合器基礎的光濾波器,因其係在相反方向的模式中運轉,在獲得所需的光濾波器光譜時,對於光柵位置是敏感的,因此,它們具有較好的穩定性,且比Mach-Zehnder干涉計基礎的光濾波器易於再製的量產。It is well known that an optical add/drop multiplexer (OADM) enables a specific wavelength in an optical fiber communication to be elastically inserted or removed, which has become a wavelength division multiplexing (WDM) network technology. An indispensable component. Wavelength division multiplexed (WDM) access technology has proven to be a key technology for global dissemination of multimedia communications within fiber-optic networks to accommodate large amounts of bandwidth. In a wavelength division multiplexed (WDM) based network, it is necessary to use an optical plug multiplexer (OADM) to insert (increase) or capture (drop) a particular wavelength in a fiber optic communication system. These components allow for the extraction of wavelengths in the transmission loop and the addition of some wavelengths into the network (see Annex 4, Reference 8). A number of optical complement/light extraction architectures based on optical waveguides have been demonstrated. These include Mach-Zehnder interferometer (MZI) based on optical complement/light filter, grating-assisted isotropic coupler, asymmetric Bragg coupler (ABC) (Reference 8), and Bragg reflector gateway waveguide filter . Mach-Zehnder interferometers based on optical complement/light extraction filters produce good insertion loss and channel insulation, which can be built on both all-fiber and integrated optical platforms. However, they are extremely sensitive to the balance of the interferometer and the position of the two gratings when implemented. Therefore, some post-manufacture overall designs are often required. It is currently known that grating-assisted omnidirectional couplers composed of two dissimilar waveguides and a long period grating have been widely discussed for use as wavelength filters. It has the advantage of a long grating period (about several tens of centimeters), making it easy to manufacture using standard photolithography, and having low back reflection characteristics to avoid unwanted optical resonance. The main disadvantage of this device is that it requires a long interaction grating length (approximately several hundred grating periods) when it is operating in a small spectral bandwidth. Therefore, this device is not beneficial for the integration. The Bragg reflector gateway waveguide filter has good return loss and crosstalk characteristics, as well as inherent stability. However, because it requires non-interactive optical propagation, its use in integrated optical formats is limited. As for the optical filter based on the asymmetric Bragg coupler, because it operates in the opposite direction mode, it is sensitive to the grating position when obtaining the desired optical filter spectrum, so they have better stability. It is easier to reproduce mass production than the optical filter based on the Mach-Zehnder interferometer.

由於聚合物材料提供製造複雜但可撓彎之積體光體裝置一個可想像的技術平台模式,該等材料特別適用在一平面基板上的波長劃分多工器之製造,此乃因為其具有低成本的效益,容易執行,以及機械可撓性。聚合物表面製作布拉格光柵,其提供窄帶寬,低串擾、以及平頂通過頻帶,已成為光學通訊及光學感應中不同應用的重要元件。例如,Butler等人使用聚合物表面釋出布拉格光柵在一積體光學波導結構上,以製造化學感測器。Noh等人實證了一個用在WDM光學通訊中的基於一聚合物波導布拉格反射器熱/光協調而可節省成本之可調波長雷射器。其他可調雷射及光濾波器的應用,也都已被論證(附件四參考文獻21)。Since the polymer material provides an imaginable technical platform mode for manufacturing complex but flexible body devices, these materials are particularly suitable for the fabrication of wavelength division multiplexers on a planar substrate because of their low Cost benefits, easy to perform, and mechanical flexibility. Bragg gratings are fabricated on the polymer surface, which provide narrow bandwidth, low crosstalk, and flat-top passbands, and have become important components for different applications in optical communications and optical sensing. For example, Butler et al. used a polymer surface to release a Bragg grating on an integrated optical waveguide structure to fabricate a chemical sensor. Noh et al. demonstrated a cost-effective tunable wavelength laser based on a polymer waveguide Bragg reflector thermal/light coordination for use in WDM optical communications. The application of other tunable lasers and optical filters has also been demonstrated (Annex 4 Reference 21).

先前本發明人已論證了在聚合物光學過濾器上快速成型次微米光柵的製程(如附件四參考文獻11)。其可獲得高深寬比及垂直邊牆,並達成在紫外聚合物複製一致性的光柵。本發明人等最近又再研發並實證一個良好的製程,其係透過使用一般經濟的軟印刷技術,微模製技術及全像術微影干涉技術,而可快速生產具有次微米範圍的光柵之具單光柵波導的非對稱布拉格耦合濾波器。Previously, the inventors have demonstrated a process for rapidly forming sub-micron gratings on polymeric optical filters (e.g., Annex 4, Reference 11). It achieves high aspect ratios and vertical sidewalls, and achieves a grating that is consistent in UV polymer replication. The present inventors have recently developed and demonstrated a good process by rapidly producing a grating having a sub-micron range by using a generally economical soft printing technique, a micro-molding technique, and a holographic interferometric interference technique. An asymmetric Bragg coupling filter with a single grating waveguide.

本發明之主要目的,在於提供一種簡單、快速,並能製作高深寬比光柵的具單光柵波導的非對稱布拉格耦合濾波器之製造方法。達成本目的之技術手段,係於基板上覆上紫外光聚合物薄膜及負光阻薄膜。對負光阻曝光成型具二溝槽的光阻模。於光阻模及一溝槽覆設矽膠薄膜,及將正光阻舖在另一溝槽。正光阻曝光而於溝槽內成型光柵。覆設另一矽膠薄膜,以將二矽膠薄膜自光阻模上剝離。將矽膠薄膜覆設在光阻模及填滿一溝槽,及將另一矽膠薄膜覆設在光阻模上及填滿另一溝槽,以成型一矽膠圖章。以矽膠圖章將二波導及光柵轉印在紫外光固化聚合物薄膜上,而形成包覆層。將紫外光固化聚合物注入包覆層的二溝槽,以分別形成波導核心。再將紫外光固化聚合物薄膜舖置於包覆層上,以完成過濾器之製作。SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method for fabricating an asymmetric Bragg coupling filter having a single grating waveguide that is simple, fast, and capable of fabricating high aspect ratio gratings. The technical means for achieving the object is to coat the substrate with an ultraviolet polymer film and a negative photoresist film. A two-groove photoresist pattern is formed by exposure to a negative photoresist. The photoresist film and a trench are coated with a silicone film, and the positive photoresist is coated on the other trench. The photoresist is exposed to form a grating in the trench. Another silicone film is coated to peel the tantalum film from the photoresist mold. The silicone film is coated on the photoresist mold and filled with a groove, and another silicone film is coated on the photoresist mold and filled with another groove to form a silicone stamp. The two waveguides and the grating are transferred onto the ultraviolet-curable polymer film by a silicone stamp to form a coating layer. An ultraviolet curable polymer is injected into the two trenches of the cladding layer to form a waveguide core, respectively. The UV-curable polymer film is then placed on the coating to complete the manufacture of the filter.

壹.本發明之基本技術特徵one. Basic technical features of the present invention

如圖1至4所示,本發明具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其包括下列步驟:As shown in FIGS. 1 to 4, a method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to the present invention comprises the following steps:

(A)於一玻璃基板10上依序覆上一紫外光固化聚合物薄膜11及一負光阻薄膜12(如圖1及2(a)所示);(A) sequentially coating a UV-curable polymer film 11 and a negative photoresist film 12 on a glass substrate 10 (as shown in Figures 1 and 2 (a));

(B)經由一光罩13而對負光阻薄膜12照射紫外光(如圖1及2(b)所示),使負光阻薄膜12上成型不同寬度的一第一溝槽14及一第二溝槽15以做為一光阻模16(如圖2(c)所示);(B) irradiating the negative photoresist film 12 with ultraviolet light through a mask 13 (as shown in FIGS. 1 and 2(b)), and forming a first trench 14 and a width of different widths on the negative photoresist film 12. The second trench 15 is used as a photoresist mold 16 (as shown in FIG. 2(c));

(C)於該光阻模16一半邊覆設一第一矽膠薄膜17並填滿第一溝槽14(如圖1及2(d)所示),將第一矽膠薄膜17烘烤固化;(C) laminating a first silicone film 17 on one side of the photoresist mold 16 and filling the first trench 14 (as shown in FIGS. 1 and 2(d)) to bake and cure the first silicone film 17;

(D)將一特定量的正光阻18舖在光阻模16另一半邊上並填滿第二溝槽15(如圖1及2(e)所示);(D) depositing a specific amount of positive photoresist 18 on the other half of the photoresist die 16 and filling the second trench 15 (as shown in Figures 1 and 2(e));

(E)以全影像微影干涉技術對正光阻18曝光而於第二溝槽15內形成一第一光柵圖樣19(如圖1、圖2(f)及圖2(g)所示);(E) exposing the positive photoresist 18 by a full-image lithography interference technique to form a first grating pattern 19 in the second trench 15 (as shown in FIG. 1, FIG. 2(f) and FIG. 2(g));

(F)將一第二矽膠薄膜20覆設在光阻模16上,並填滿第二溝槽15及覆蓋黏著第一矽膠薄膜17(如圖1及3(a)所示),將第二矽膠薄膜20烘烤固化;(F) coating a second silicone film 20 on the photoresist mold 16, filling the second trench 15 and covering the first silicone film 17 (as shown in Figures 1 and 3(a)), The second silicone film 20 is baked and cured;

(G)將該第二矽膠薄膜20自光阻模16上剝離,而連帶使第一矽膠薄膜17自光阻模16上剝離(如圖1、圖3(b)及3(c)所示);(G) the second silicone film 20 is peeled off from the photoresist mold 16, and the first silicone film 17 is peeled off from the photoresist mold 16 (as shown in Figs. 1, 3(b) and 3(c). );

(H)將一第三矽膠薄膜21覆設在光阻模16一半邊,並填滿第二溝槽15(如圖1及3(d)所示),將第三矽膠薄膜21烘烤固化,使第一光柵圖樣19轉印到第三矽膠薄膜21而形成一第二光柵圖樣22;(H) A third silicone film 21 is coated on one side of the photoresist mold 16 and filled with the second trench 15 (as shown in FIGS. 1 and 3(d)), and the third silicone film 21 is baked and cured. , the first grating pattern 19 is transferred to the third silicone film 21 to form a second grating pattern 22;

(I)將一第四矽膠薄膜23覆設在光阻模16上,並填滿第一溝槽14及覆蓋黏著第三矽膠薄膜21(如圖1及3(e)所示),將第四矽膠薄膜23烘烤固化;(I) a fourth silicone film 23 is coated on the photoresist mold 16, and fills the first trench 14 and covers the third silicone film 21 (as shown in Figures 1 and 3(e)). The four silicone film 23 is baked and cured;

(J)將第四矽膠薄膜23連同第三矽膠薄膜21自光阻模16上剝離(如圖1及3(f)所示),由第四矽膠薄膜23結合第三矽膠薄膜21而形成一矽膠圖章24(如圖3(g)所示),矽膠圖章24上具有與第一溝槽14及第二溝槽15形狀對應配合的一第一凸條25及一第二凸條26,第二凸條26上具有第二光柵圖樣22;(J) peeling the fourth silicone film 23 together with the third silicone film 21 from the photoresist mold 16 (as shown in FIGS. 1 and 3(f)), and forming a first silicone film 23 in combination with the third silicone film 21. a silicone stamp 24 (shown in FIG. 3(g)), the silicone stamp 24 has a first ridge 25 and a second rib 26 corresponding to the shapes of the first groove 14 and the second groove 15, The second ridge 26 has a second grating pattern 22;

(K)將矽膠圖章24覆設在一第一紫外光固化聚合物薄膜27上(如圖1及4(a)所示),利用第一凸條25及第二凸條26使第一紫外光固化聚合物薄膜27上成型一第三溝槽28及一第四溝槽29,並將矽膠圖章24上的第二光柵圖樣22轉印在第四溝槽29底而形成一第三光柵圖樣30;(K) coating the silicone stamp 24 on the first ultraviolet-curable polymer film 27 (as shown in FIGS. 1 and 4(a)), using the first ridge 25 and the second ridge 26 to make the first ultraviolet A third trench 28 and a fourth trench 29 are formed on the photocurable polymer film 27, and the second grating pattern 22 on the silicone stamp 24 is transferred to the bottom of the fourth trench 29 to form a third grating pattern. 30;

(L)將第一紫外光固化聚合物薄膜27照射寬帶紫外光而固化(如圖1及4(b)所示);(L) curing the first ultraviolet curable polymer film 27 by irradiating broadband ultraviolet light (as shown in Figures 1 and 4(b));

(M)將矽膠圖章24自第一紫外光固化聚合物薄膜27移除(如圖1及4(c)所示),而以固化的第一紫外光固化聚合物薄膜27做為過濾器的一包覆層31(如圖4(d)所示);(M) removing the silicone stamp 24 from the first ultraviolet-curable polymer film 27 (as shown in FIGS. 1 and 4(c)), and using the cured first ultraviolet-curable polymer film 27 as a filter. a cladding layer 31 (shown in Figure 4 (d));

(N)將一特定量的第一紫外光固化聚合物32注入第三溝槽28及第四溝槽29(如圖1及4(e)所示),以分別形成波導核心33/34;(N) a specific amount of the first ultraviolet curing polymer 32 is injected into the third trench 28 and the fourth trench 29 (as shown in Figures 1 and 4 (e)) to form the waveguide core 33 / 34;

(O)將一第三紫外光固化聚合物薄膜35舖置於包覆層31上(如圖1及4(f)所示),以封閉第三溝槽28及第四溝槽29;及(O) depositing a third ultraviolet-curable polymer film 35 on the cladding layer 31 (as shown in FIGS. 1 and 4(f)) to close the third trench 28 and the fourth trench 29;

(P)以紫外光照射第三紫外光固化聚合物薄膜35(如圖1及4(g)所示),使第三紫外光固化聚合物薄膜35固化以形成一上覆蓋層36,並使上覆蓋層36與包覆層31之聚合物交聯,而完成本發明之過濾器的製作。(P) irradiating the third ultraviolet-curable polymer film 35 with ultraviolet light (as shown in FIGS. 1 and 4(g)) to cure the third ultraviolet-curable polymer film 35 to form an upper cover layer 36, and The upper cover layer 36 is crosslinked with the polymer of the cover layer 31 to complete the manufacture of the filter of the present invention.

貳.本發明之實驗例two. Experimental example of the present invention 2.1本發明之製作2.1 Production of the invention

請參看圖2(a)至(g)、圖3(a)至(g)及圖4(a)至(g)所示,本發明具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,實驗例中,係將一厚度為700-μm玻璃裁切成5cm×1cm矩形以做為基板10。將基板10清洗後,先將紫外光固化聚合物薄膜11(本發明實驗例中,聚合物薄膜為OG146環氧樹脂,由美國公司Epoxy Technology Inc.所出品)披覆在基板10上,再利用旋轉塗佈技術,以轉速1000 rpm時間17秒的條件,於紫外光固化聚合物薄膜11上披覆一層厚度為6.0μm的負光阻薄膜12。使用UV光罩調校器(mask aligner),經由聚對苯二甲酸乙二醇酯(polyethylene terephthalate,PET)製成的光罩13而對負光阻薄膜12照射紫外光約9秒,隨著再以SU-8負光阻顯影器進行45秒顯影,使負光阻薄膜12上成型一第一溝槽14及一第二溝槽15以形成光阻模16,此光阻模16接著被用來產生矽膠圖章24,然後這個矽膠圖章24被用來將光柵圖樣轉移至紫外光固化聚合物(本發明實驗例採用Ormo-comp紫外催化聚合物,其由德國公司micro resist technology GmbH所製造,其固化的體積收縮率約5-7%,熱穩定性溫度達270℃)。以光學顯微鏡(optical microscope,OM)觀察到的光阻模16端面之橫斷面的影像如附件一圖1所示。Referring to Figures 2(a) to (g), Figures 3(a) to (g) and Figures 4(a) to (g), the asymmetric Bragg coupling polymer filter of the present invention has a single grating waveguide. In the manufacturing method, in the experimental example, a glass having a thickness of 700 μm was cut into a rectangle of 5 cm × 1 cm to serve as the substrate 10. After the substrate 10 is cleaned, the ultraviolet curable polymer film 11 (in the experimental example of the present invention, the polymer film is OG146 epoxy resin, which is produced by American company Epoxy Technology Inc.) is coated on the substrate 10 and reused. The UV-curable polymer film 11 was coated with a negative photoresist film 12 having a thickness of 6.0 μm by spin coating technique at a rotation speed of 1000 rpm for 17 seconds. The negative photoresist film 12 is irradiated with ultraviolet light for about 9 seconds via a mask 13 made of polyethylene terephthalate (PET) using a UV mask aligner. Then, a SU-8 negative photoresist developing device is used for 45 seconds to form a first trench 14 and a second trench 15 on the negative photoresist film 12 to form a photoresist pattern 16. The photoresist pattern 16 is then Used to produce a silicone stamp 24, which is then used to transfer the grating pattern to a UV curable polymer (the experimental example of the invention employs an Ormo-comp UV-catalyzed polymer manufactured by the German company micro resist technology GmbH, The solidification has a volume shrinkage of about 5-7% and a thermal stability temperature of 270 ° C). An image of a cross section of the end face of the photoresist 16 observed by an optical microscope (OM) is shown in Fig. 1 of the accompanying drawings.

為了消除來自輸入端的自反射現象,波導的光柵被製作在非對稱波導的其一波導溝槽(擷取端drop terminal)上。即於光阻模16一半邊覆設低黏度的一層第一矽膠薄膜17,並注入填滿較窄的第一溝槽14,其注入方式係使用有毛細效應並組裝在分辨率為0.1μm之微定位平台的滴針,在長工作距離的顯微鏡(ZAK microscopes,Taiwan)檢測下,物鏡的焦距長度為13mm。再將第一矽膠薄膜17以90℃的溫度烘烤一小時使之固化,此固化的第一矽膠薄膜17用來防止較窄的第一溝槽14內也被成型有光柵。In order to eliminate self-reflection from the input, the grating of the waveguide is fabricated on one of its waveguides (drop terminal). That is, a low-viscosity layer of the first silicone film 17 is coated on one side of the photoresist mold 16 and injected into the narrow first trench 14 by using a capillary effect and assembled at a resolution of 0.1 μm. The needle of the micropositioning platform is measured by a microscope (ZAK microscopes, Taiwan) with a long working distance, and the focal length of the objective lens is 13 mm. The first silicone film 17 is then baked at a temperature of 90 ° C for one hour to cure, and the cured first silicone film 17 serves to prevent the narrow first groove 14 from being formed with a grating.

再利用旋轉塗佈技術,將正光阻18(本發明採用美國公司MicroChem Corp.出品的Ultra 123)舖在光阻模16另一半邊上並填滿第二溝槽15。利用全影像微影干涉技術,用雙光束干涉圖樣對正光阻18曝光,而於第二溝槽15內形成第一光柵圖樣19,並將正光阻18所形成的第一光柵圖樣19在Ultra 123顯影器中作用定型。為了便於將作為保護層的第一矽膠薄17膜剝離,乃將一第二矽膠薄膜20覆設在光阻模16上,並填滿第二溝槽15及覆蓋黏著第一矽膠薄膜17,將第二矽膠薄膜20以90℃的溫度烘烤一小時使之固化,然後將第二矽膠薄膜20自光阻模16上剝離,而連帶使第一矽膠薄膜17自光阻模16上剝離,請參看附件一圖2所示,係本發明以光學顯微鏡觀察到在旋轉塗佈後,正光阻18填在較寬的第二溝槽15內的狀態。上述矽膠,本發明均採用聚二甲基矽氧烷(Polydimethyl siloxane,PDMS)。Then, using a spin coating technique, a positive photoresist 18 (Ultra 123 manufactured by MicroChem Corp. of the present invention) is spread on the other half of the photoresist die 16 and fills the second trench 15. Using the full image lithography interference technique, the positive photoresist 18 is exposed by the two-beam interference pattern, and the first grating pattern 19 is formed in the second trench 15, and the first grating pattern 19 formed by the positive photoresist 18 is in Ultra 123. The setting is effected in the developing device. In order to facilitate the peeling of the first silicone thin film 17 as a protective layer, a second silicone film 20 is coated on the photoresist mold 16 and fills the second trench 15 and covers the first silicone film 17. The second silicone film 20 is baked at a temperature of 90 ° C for one hour to be cured, and then the second silicone film 20 is peeled off from the photoresist mold 16 , and the first silicone film 17 is peeled off from the photoresist mold 16 . Referring to Figure 2 of the accompanying drawings, the present invention observes a state in which the positive photoresist 18 is filled in the wider second trench 15 after spin coating by an optical microscope. In the above silicone, the present invention employs polydimethyl siloxane (PDMS).

再以光阻模16作為母模,供用來將波導及光柵的樣式轉移至一第三矽膠薄膜21。亦即,利用毛細效應的方式,將一第三矽膠薄膜21覆設在光阻模16一半邊,並填滿具有第一光柵圖樣19的第二溝槽15,將第三矽膠薄膜21以90℃的溫度烘烤一小時使之固化,使第一光柵圖樣19轉印到第三矽膠薄膜21而形成一第二光柵圖樣22。將一第四矽膠薄膜23覆設在光阻模16上,並填滿第一溝槽14及覆蓋黏著第三矽膠薄膜21,將第四矽膠薄膜23以90℃的溫度烘烤一小時使之固化。將第四矽膠薄膜23連四同第三矽膠薄膜21自光阻模16上剝離,而形成一矽膠圖章24,矽膠圖章24上具有與第一溝槽14及第二溝槽15形狀對應配合的一第一凸條25及一第二凸條26,第二凸條26上具有第二光柵圖樣22。如附件二圖1所示,係矽膠圖章24以掃瞄式電子顯微鏡(SEM)觀察到的影像,顯示矽膠圖章24的一波導的完整光柵,光柵的週期為500nm,深度為400-450nm,此二量是以原子力顯微鏡(atomic force microscope,AFM))量測而得。上述矽膠,本發明均採用聚二甲基矽氧烷(Polydimethyl siloxane,PDMS)。The photoresist mold 16 is used as a master mold for transferring the pattern of the waveguide and the grating to a third silicone film 21. That is, a third silicone film 21 is coated on one side of the photoresist mold 16 by a capillary effect, and the second trench 15 having the first grating pattern 19 is filled, and the third silicone film 21 is 90. The temperature of °C is baked for one hour to cure, and the first grating pattern 19 is transferred to the third silicone film 21 to form a second grating pattern 22. A fourth silicone film 23 is coated on the photoresist mold 16, and the first trench 14 is filled and covered with the third silicone film 21, and the fourth silicone film 23 is baked at a temperature of 90 ° C for one hour. Cured. The fourth silicone film 23 is peeled off from the photoresist film 16 to form a silicone stamp 24, and the silicone stamp 24 has a shape corresponding to the first groove 14 and the second groove 15. A first rib 25 and a second rib 26 have a second grating pattern 22 on the second rib 26. As shown in Figure 1 of Annex II, the tantalum stamp 24 is an image observed by a scanning electron microscope (SEM), showing a complete grating of a waveguide of the silicone stamp 24, with a grating period of 500 nm and a depth of 400-450 nm. The two quantities were obtained by measurement using an atomic force microscope (AFM). In the above silicone, the present invention employs polydimethyl siloxane (PDMS).

再將具矽膠圖章24覆設在一第一紫外光固化聚合物薄膜27上,利用第一凸條25及第二凸條26使第一紫外光固化聚合物薄膜27上成型一第三溝槽28及一第四溝槽29,並將矽膠圖章24之第二凸條26上的第二光柵圖樣22轉印在第三溝槽底。將第一紫外光固化聚合物薄膜27照射寬帶紫外光而固化。其中,為了增加第一紫外光固化聚合物薄膜27與玻璃載片37之間的附著度,將一層附著力促進劑(prime 08)薄膜38舖在Pyrex玻璃載片37上,並將厚度為30μm的間隔子置在玻璃載片37上並介於矽膠圖章24與附著力促進劑薄膜38之間。將第一紫外光固化聚合物(Ormo-comp)注入,然後以寬帶且波長在300-400 nm的紫外光照射。經完全催化後,可以很輕易地將矽膠圖章24與第一紫外光固化聚合物薄膜27剝離。將矽膠圖章24自第一紫外光固化聚合物薄膜27移除,而以固化的第一紫外光固化聚合物薄膜27做為非對稱布拉格波導過濾器的一包覆層31。如附件二圖2所示,以SEM觀察的影像,顯示複製在第一紫外光固化聚合物薄膜27上的波導及光柵狀態是好的,而且也很符合光阻模16上的維度尺寸。第二溝槽15(有光柵)及第一溝槽14(無光柵)的橫斷面之深寬維度分別為5μm×9.7μm及6μm×6.9μm,且二者的間隔為2.4μm,耦合長度約15mm,總長約5cm。前述紫外光固化聚合物,本發明採用德國公司(micro resist technology,GmbH)出品的Ormo-comp紫外光固化聚合物,其在波長1550nm的光束中折射率為1.505。Then, the silicone stamp 24 is applied to the first UV curable polymer film 27, and the first UV strip 14 and the second strip 26 are used to form a third trench on the first UV curable polymer film 27. 28 and a fourth groove 29, and the second grating pattern 22 on the second ridge 26 of the silicone stamp 24 is transferred to the bottom of the third groove. The first ultraviolet curable polymer film 27 is cured by irradiating broadband ultraviolet light. Wherein, in order to increase the adhesion between the first ultraviolet-curable polymer film 27 and the glass slide 37, a layer of adhesion promoter (prime 08) film 38 is laid on the Pyrex glass slide 37, and the thickness is 30 μm. The spacer is placed on the glass slide 37 between the silicone stamp 24 and the adhesion promoter film 38. The first ultraviolet light curing polymer (Ormo-comp) is implanted and then irradiated with ultraviolet light having a wide band and a wavelength of 300 to 400 nm. After the complete catalysis, the silicone stamp 24 can be easily peeled off from the first ultraviolet-curable polymer film 27. The silicone stamp 24 is removed from the first UV-curable polymer film 27, and the cured first UV-curable polymer film 27 is used as a cladding layer 31 of the asymmetric Bragg waveguide filter. As shown in Fig. 2 of Fig. 2, the image observed by SEM shows that the state of the waveguide and the grating reproduced on the first ultraviolet-curable polymer film 27 is good, and also conforms to the dimensional dimension on the photoresist 16. The depth and width dimensions of the cross section of the second trench 15 (with grating) and the first trench 14 (without grating) are 5 μm × 9.7 μm and 6 μm × 6.9 μm, respectively, and the interval between the two is 2.4 μm, and the coupling length is About 15mm, the total length is about 5cm. In the above ultraviolet curable polymer, the present invention uses an Ormo-comp ultraviolet curable polymer produced by a micro resist technology (GmbH) having a refractive index of 1.505 in a light beam having a wavelength of 1550 nm.

將特定量的第二紫外光固化聚合物32注入第三溝槽28及第四溝槽29,以分別形成波導核心33/34。由於旋轉塗佈可能導致在核心33/34外產生厚的非導層,以致在光纖輸入至過濾器期間產生一些耦合損失,本發明採用另一種方法,亦即將第二紫外光固化聚合物32注入波導閘道的第三溝槽28及第四溝槽29內,融合拼接機器及微定位探針平台,在長工作距離光學顯微的檢測下。在第二紫外光固化聚合物32注入第三溝槽28及第四溝槽29後,將矽膠薄膜39披覆在一玻璃載片40,並被覆置在第三溝槽28及第四溝槽29上,並以適當壓力擠壓去除第三溝槽及第四溝槽29外多餘的第二紫外光固化聚合物32。第二紫外光固化聚合物32在寬帶紫外光照射。移除玻璃載片40,使矽膠薄膜39自包覆層31上剝離。前述紫外光固化聚合物,本發明採用德國公司(micro resist technology,GmbH)出品的Ormo-core紫外光固化聚合物,其在波長1550 nm的光束中折射率為1.539,其為無機與有機混合聚合物,熱穩定性溫度達270℃。A specific amount of the second ultraviolet curable polymer 32 is injected into the third trench 28 and the fourth trench 29 to form the waveguide core 33/34, respectively. Since spin coating may result in a thick non-conductive layer emerging outside the core 33/34, such that some coupling loss occurs during fiber input to the filter, the present invention employs another method, namely, injecting the second ultraviolet light curable polymer 32. In the third trench 28 and the fourth trench 29 of the waveguide, the fusion splicing machine and the micro-positioning probe platform are used under the detection of long working distance optical microscopy. After the second ultraviolet curing polymer 32 is injected into the third trench 28 and the fourth trench 29, the silicone film 39 is coated on a glass carrier 40 and covered in the third trench 28 and the fourth trench. 29, and removing the excess second ultraviolet curing polymer 32 outside the third groove and the fourth groove 29 by pressing at an appropriate pressure. The second ultraviolet curable polymer 32 is irradiated with broadband ultraviolet light. The glass slide 40 is removed to peel the silicone film 39 from the cover layer 31. The above ultraviolet curing polymer, the invention adopts Ormo-core ultraviolet curing polymer produced by micro resist technology (GmbH), which has a refractive index of 1.539 in a light beam with a wavelength of 1550 nm, which is an inorganic and organic mixed polymerization. The thermal stability temperature is 270 ° C.

為了避免因為表面散射或非對稱波導結構徹底缺乏導引模式所造成的光學損失,上覆蓋層36被使用。將厚度30μm的間隔子介置於包覆層31與一玻璃載片41之間。於包覆層31與玻璃載片41之間的間隔空間注入第三紫外光固化聚合物薄膜35,以成型上覆蓋層36,使第三紫外光固化聚合物薄膜35舖置於包覆層31上,以封閉第三溝槽28及第四溝槽29。再以紫外光照射第三紫外光固化聚合物薄膜35以形成上覆蓋層36,並使包覆層31與上覆蓋層36之聚合物交聯,進而完成過濾器之製作(如圖5所示)。將過濾器樣品裁切及端面拋光,進而獲得最後的非對稱布拉格耦合過濾器,長度為4cm,寬度為1cm,厚度約為60μm。如附件三圖1為兩非對稱波導之輸出端的斷面圖。顯然地,在核心外圍並沒有未導層。前述紫外光固化聚合物,本發明採用德國公司(micro resist technology,GmbH)出品的Ormo-comp紫外光固化聚合物,其在波長1550 nm的光束中折射率為1.505。The upper cover layer 36 is used in order to avoid optical losses due to surface scattering or asymmetric waveguide structures that are completely devoid of the guiding mode. A spacer having a thickness of 30 μm was interposed between the cladding layer 31 and a glass slide 41. The third ultraviolet-curable polymer film 35 is injected into the space between the cladding layer 31 and the glass slide 41 to form the upper cover layer 36, and the third ultraviolet-curable polymer film 35 is placed on the cladding layer 31. Upper to close the third trench 28 and the fourth trench 29. The third ultraviolet-curable polymer film 35 is irradiated with ultraviolet light to form the upper cover layer 36, and the coating layer 31 and the polymer of the upper cover layer 36 are cross-linked, thereby completing the manufacture of the filter (as shown in FIG. 5). ). The filter sample was cut and the end face was polished to obtain the final asymmetric Bragg coupling filter having a length of 4 cm, a width of 1 cm, and a thickness of about 60 μm. Figure 1 of Figure 3 is a cross-sectional view of the output of two asymmetric waveguides. Obviously, there is no unguided layer on the periphery of the core. In the above ultraviolet curable polymer, the present invention uses an Ormo-comp ultraviolet curable polymer produced by a micro resist technology (GmbH) having a refractive index of 1.505 in a light beam having a wavelength of 1550 nm.

2.2本發明模擬2.2 Simulation of the invention

基本的波導性質,包括模型樣式(mode patterns)和有效折射率,使用有限時間差網域光束增殖法(finite different time domain beam propagation method,FDTD-BPM)來驗證。此波導裝置傳輸特性,包括最小傳輸及波段寬度,以耦合模式方程式來計算[如附件四參考文獻8]。因為刻有光柵波導的深度隨著填在波導溝槽內之正光阻(Ultra-123)的厚度而改變,而深度變化影響傳輸特性在上模擬工作中也被分析。為避免共向漸逝耦合以獲得優良的交談運作,我們使用高非對稱波導作耦合器,以具有密閉到每一個單波導的合成模式。為了易於比對,窄波導的橫斷面維度固定在寬為7μm,深度為6μm。寬波導的寬度固定為10μm,深度記為d。二波導相隔之間隔記為s,範圍分別為3-6μm及2-3μm。圖6及7顯示單波導的基本模式,圖8及9顯示,在d=4.5μm及s=2μm的條件下,非對稱布拉格耦合器的合成模式。第一及第二模式中,單一及合成模式的整體重疊分別為91.28%及91.04%。單一及合成模式的整體重疊有最小值,因為刻有光柵波導的深度相對原始深度是減少25%,亦即6μm(請參看圖10、11、11所示)。此結果意謂著,有一最大傳輸損失,因為雙向交叉能量傳輸發生兩波導之間相對1/4原始深度有深度差。不過如上所述,以本發明的構造配置是具有高非對稱性質。由模擬所獲得如圖6、7、8、9所示的各別波導之有效折射率為1.533054及1.532288。The basic waveguide properties, including mode patterns and effective refractive index, were verified using a finite different time domain beam propagation method (FDTD-BPM). The transmission characteristics of this waveguide, including minimum transmission and band width, are calculated by coupled mode equations [eg Annex 4 Reference 8]. Since the depth of the grating waveguide is changed with the thickness of the positive photoresist (Ultra-123) filled in the waveguide trench, the depth variation affecting the transmission characteristics is also analyzed in the upper simulation work. To avoid co-evolving coupling for good conversational operation, we use a highly asymmetric waveguide as the coupler to have a composite mode that is sealed to each single waveguide. For ease of alignment, the cross-sectional dimension of the narrow waveguide is fixed at a width of 7 μm and a depth of 6 μm. The width of the wide waveguide is fixed at 10 μm and the depth is recorded as d . The interval between the two waveguides is denoted by s , and the ranges are 3-6 μm and 2-3 μm, respectively. Figures 6 and 7 show the basic mode of a single waveguide, and Figures 8 and 9 show the synthesis mode of an asymmetric Bragg coupler under conditions of d = 4.5 μm and s = 2 μm. In the first and second modes, the overall overlap of the single and composite modes is 91.28% and 91.04%, respectively. The overall overlap of the single and composite modes has a minimum because the depth of the engraved grating waveguide is reduced by 25% relative to the original depth, ie 6 μm (see Figures 10, 11, and 11). This result means that there is a maximum transmission loss because the bidirectional cross energy transmission occurs with a depth difference of 1/4 of the original depth between the two waveguides. However, as described above, the configuration configuration of the present invention has a high asymmetric property. The effective refractive indices of the individual waveguides shown in Figures 6, 7, 8, and 9 obtained by the simulation were 1.533054 and 1.532288.

如參考文獻8所定義,耦合係數為κ21,有關的取出反射性及過濾帶寬,係由波導模型樣式waveguide mode patterns計算而得。因為複向耦合是弱的,在輸出埠的最小傳輸T min 可大約地由T min =1-R max 計算而得,其中 R max 是最大擷取反射性(drop reflectivity)。如圖10、11、12所示,可發現耦合係數κ21對應刻有光柵之波導的深度不同而改變,圖中顯示為不同分隔間距。在此,光柵深度及週期分別假設為400nm及500nm。此結果顯示,在波導非對稱及耦合係數κ21之間有一交換(trade-off)。條件為d=4.5μm,s=2μm,耦合長度L=15mm的耦合器的輸出傳輸光譜描繪如圖17所示。As defined in reference 8, the coupling coefficient is κ 21 , and the relevant reflection reflectivity and filtering bandwidth are calculated from the waveguide mode patterns. Because the complex coupling is weak, in the minimum transmission T min may be about output port by T min = 1- R max calculated from, where R max is the maximum capture reflective (drop reflectivity). As shown in Figs. 10, 11, and 12, it can be found that the coupling coefficient κ 21 changes depending on the depth of the waveguide engraved with the grating, and the difference is shown in the figure. Here, the grating depth and period are assumed to be 400 nm and 500 nm, respectively. This result shows that there is a switching (trade-off) between 21 asymmetric waveguide and the coupling coefficient κ. The output transmission spectrum of the coupler with the condition d = 4.5 μm, s = 2 μm and coupling length L = 15 mm is shown in Fig. 17.

2.3本發明的量測2.3 Measurement of the invention

使用端火耦合技術觀察光學波導的近場態樣。量測系統繪製如圖13所示。樣本被固定在一個三軸微定位器50(美國Newport Inc.公司製造)。單模式光纖及顯微物鏡用作輸入光耦合及輸出影像放大,它們也被安裝在三軸微定位器50上,以便於關鍵對齊。放大自發射光源,發射波長範圍為1530-1560nm的光束,作為寬帶光源(本發明採用Stabilized Light Source,PTS-BBS,美國公司Newport Inc.出品)。使用in-line極化器51(ILP-55-N,Advanced Fiber Resources,China)將光束極化在TE方向,並以極化控制器52(本發明採用F-POL-PC,美國公司Newport Inc.出品)控制波長約1550nm運作。其極化狀態,係使用近紅外精密線性極化器(本發明採用20LP-NIR,美國公司Newport Inc.出品)來檢查。波導的輸出模式場以具有影像分析軟體(LBA-710PC-D,V4.17,美國公司Spiricon Inc.所出品)的IR-CCD(美國公司Electrophysics Inc.出品的Model7290微觀測器)擷取影像,並顯示波導的單模式特徵。圖14、15顯示二波導之斷面深寬維度分別為4.5μm×10μm及6μm×7μm,且間隔s=2μm的二輸出波導的場強度分佈狀況。以功率3mW的ASE雷射光源窄波導(不具光柵)的一端,以避免自我反射,非對稱模式的形貌輪廓也一併觀察。The near-field aspect of the optical waveguide is observed using the end-fire coupling technique. The measurement system is drawn as shown in Figure 13. The sample was fixed in a three-axis micro locator 50 (manufactured by Newport Inc., USA). Single mode fibers and microscope objectives are used for input optical coupling and output image magnification, and they are also mounted on a three-axis micro-positioner 50 to facilitate critical alignment. The self-emissive light source is amplified and emits a light beam having a wavelength ranging from 1530 to 1560 nm as a broadband light source (the present invention uses Stabilized Light Source, PTS-BBS, available from Newport Inc., USA). The beam is polarized in the TE direction using an in-line polarizer 51 (ILP-55-N, Advanced Fiber Resources, China) and polarized with a controller 52 (F-POL-PC, US company Newport Inc.) . Produced) Control wavelength operation of about 1550nm. The polarization state is checked using a near-infrared precision linear polarizer (this invention uses 20LP-NIR, manufactured by Newport Inc., USA). The output mode field of the waveguide is captured by an IR-CCD (Model 7290 Micro Observer from the American company Electrophysics Inc.) with image analysis software (LBA-710PC-D, V4.17, American company Spiricon Inc.). And shows the single mode feature of the waveguide. 14 and 15 show the field intensity distribution of the two-output waveguides of the two waveguides having a depth and width dimension of 4.5 μm × 10 μm and 6 μm × 7 μm, respectively, and an interval of s = 2 μm. The end of the narrow waveguide (without grating) of the ASE laser source with a power of 3 mW is used to avoid self-reflection, and the contour profile of the asymmetric mode is also observed.

除此,插入(insertion),交談(cross-talk),及極化附帶損失(polarization dependent loss),均使用IR電力計(918D-Ir-OD3 & Model 1918-C,美國公司Newport Inc.出品)來量測。利用寬帶光源,是為了避免光學干涉的問題。以TE極化光,測得插入損失insertion loss約2.5 dB,交談損失cross-talk約-12.8 dB。極化附帶損失(PDL)使用極化掃描方法(polarizatiln-scanning method)[如附件四參考文獻22],結果顯示PDL約0.15 dB。In addition, insertion, cross-talk, and polarization dependent loss are all performed using an IR power meter (918D-Ir-OD3 & Model 1918-C, available from Newport Inc., USA). To measure. The use of broadband sources is to avoid the problem of optical interference. With TE polarized light, the insertion loss insertion loss was measured to be about 2.5 dB, and the conversation loss was about -12.8 dB. Polarization incidental loss (PDL) using the polarizatiln-scanning method [as in Annex IV Reference 22] shows that the PDL is about 0.15 dB.

使用如圖16所示之可調雷射系統(Agilent 81640A,美國公司Agilent Inc.出品)量測無自我反射之非對稱布拉格耦合過濾器的光譜特徵。可調雷射53的波長範圍1511-1562nm,並以極化控制器52控制。可調雷射53的輸出光纖是Panda形式的極化保持光纖,在垂直方向的慢軸線上具有TE模式。使用對齊的氦氖(He-Ne)雷射光源作為輔助光源,並結合使用2×1光學耦合器的寬帶光源。光學過濾器41固定在微定位器50上,兩單模式光纖分別作為輸入及輸出光束耦合,也被安裝在微定位器50上。輸入光束被極化在TE方向,作為模場量測系統。輸出光纖連接在可調雷射53的接收器端,以表徵過濾器的運作。The spectral characteristics of the self-reflecting asymmetric Bragg coupling filter were measured using a tunable laser system as shown in Figure 16 (Agilent 81640A, available from Agilent Inc., USA). The tunable laser 53 has a wavelength range of 1511-1562 nm and is controlled by a polarization controller 52. The output fiber of the tunable laser 53 is a polarization maintaining fiber in the form of Panda having a TE mode on a slow axis in the vertical direction. An aligned He-Ne laser source was used as the auxiliary source, combined with a broadband source using a 2 x 1 optical coupler. The optical filter 41 is attached to the micro locator 50, and the two single mode fibers are coupled as input and output beams, respectively, and are also mounted on the micro locator 50. The input beam is polarized in the TE direction as a mode field measurement system. The output fiber is coupled to the receiver end of the tunable laser 53 to characterize the operation of the filter.

量測系統的示意圖如圖16所示。為了避免最佳的過濾器運轉時產生非期望的反射,可調雷射耦合至過濾器41的窄波導端,及由相同波導的另一端耦合而出。如圖17所示,量測結果近似於理論預期。在布拉格波長,有-9.2 dB單傳輸下降。量測的布拉格波長約1532.8nm,其與理論預期(1532.67nm)的差額約為0.13nm。此3dB過濾器帶寬量測約0.125nm,其與模擬的差為0.025nm(理論帶寬約0.1nm)。此外,在實驗數據中有一約1531.6 nm的邊葉被觀察到,其可能起因於光纖與波導平行平面形成的Fabry-Perot etalon[如參考文獻23]。我們也量測過濾器TM偏振的回應,除了-9.3 dB傳輸下降之外,其顯示近似且幾乎與TE偏振光譜重疊。依照數值的模擬,中央波長預期是1532.62nm,其移出TE傳輸下降只有約0.05nm,達到可調雷射系統的分辨率。A schematic diagram of the measurement system is shown in FIG. To avoid undesired reflections during optimal filter operation, the tunable laser is coupled to the narrow waveguide end of the filter 41 and coupled out by the other end of the same waveguide. As shown in Figure 17, the measurement results approximate theoretical expectations. At the Bragg wavelength, there is a single transmission drop of -9.2 dB. The measured Bragg wavelength is about 1532.8 nm, which is about 0.13 nm from the theoretical expectation (1532.67 nm). This 3 dB filter bandwidth is measured at approximately 0.125 nm with a difference of 0.025 nm from the simulation (theoretical bandwidth is approximately 0.1 nm). In addition, a 1531.6 nm edge was observed in the experimental data, which may result from Fabry-Perot etalon formed by the parallel plane of the fiber and the waveguide [see Reference 23]. We also measured the response of the filter's TM polarization, which showed an approximation and almost overlapped with the TE polarization spectrum, except for the -9.3 dB transmission drop. According to the numerical simulation, the central wavelength is expected to be 1532.62 nm, and its removal of TE transmission is only about 0.05 nm, reaching the resolution of the tunable laser system.

以上所述,僅為本發明之一可行實施例,並非用以限定本發明之專利範圍,凡舉依據下列請求項所述之內容、特徵以及其精神而為之其他變化的等效實施,皆應包含於本發明之專利範圍內。本發明所具體界定於請求項之結構特徵,未見於同類物品,且具實用性與進步性,已符合發明專利要件,爰依法具文提出申請,謹請 鈞局依法核予專利,以維護本申請人合法之權益。The above is only one of the possible embodiments of the present invention, and is not intended to limit the scope of the patents of the present invention, and the equivalent implementations of other changes according to the contents, features and spirits of the following claims are It should be included in the scope of the patent of the present invention. The invention is specifically defined in the structural features of the request item, is not found in the same kind of articles, and has practicality and progress, has met the requirements of the invention patent, and has filed an application according to law, and invites the bureau to approve the patent according to law to maintain the present invention. The legal rights of the applicant.

10...基板10. . . Substrate

11...紫外光聚合物薄膜11. . . Ultraviolet polymer film

12...負光阻薄膜12. . . Negative photoresist film

13...光罩13. . . Mask

14...第一溝槽14. . . First groove

15...第二溝槽15. . . Second groove

16...光阻模16. . . Photoresist mode

17...第一矽膠薄膜17. . . First silicone film

18...正光阻18. . . Positive photoresist

19...第一光柵圖樣19. . . First grating pattern

20...第二矽膠薄膜20. . . Second silicone film

21...第三矽膠薄膜twenty one. . . Third silicone film

22...第二光柵圖樣twenty two. . . Second grating pattern

23...第四矽膠薄膜twenty three. . . Fourth silicone film

24...矽膠圖章twenty four. . . Silicone stamp

25...第一凸條25. . . First rib

26...第二凸條26. . . Second rib

27...第一紫外光固化聚合物薄膜27. . . First ultraviolet curing polymer film

28...第三溝槽28. . . Third groove

29...第四溝槽29. . . Fourth groove

30...第三光柵圖樣30. . . Third grating pattern

31...包覆層31. . . Coating

32...第二紫外光固化聚合物32. . . Second ultraviolet curing polymer

33/34...波導核心33/34. . . Waveguide core

35...第二紫外光固化聚合物薄膜35. . . Second ultraviolet curing polymer film

36...上覆蓋層36. . . Upper cover

37...玻璃載片37. . . Glass slide

38...附著力促進劑薄膜38. . . Adhesion promoter film

39...矽膠薄膜39. . . Silicone film

40...玻璃載片40. . . Glass slide

41...過濾器41. . . filter

50...三軸微定位器50. . . Triaxial micro locator

51...極化器51. . . Polarizer

52...極化控制器52. . . Polarization controller

圖1係本發明的流程簡單示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a simplified schematic diagram of the process of the present invention.

圖2係本發明前段的具體流程示意圖。Fig. 2 is a schematic view showing the specific flow of the preceding paragraph of the present invention.

圖3係本發明中段的具體流程示意圖。Fig. 3 is a schematic view showing the specific flow of the middle section of the present invention.

圖4係本發明後段的具體流程示意圖。Figure 4 is a schematic view showing the specific flow of the latter stage of the present invention.

圖5係本發明不具輸入波導光柵的非對稱布拉格耦合式聚合物過濾器示意圖。Figure 5 is a schematic illustration of an asymmetric Bragg coupled polymer filter without an input waveguide grating of the present invention.

圖6係本發明耦合器結構的第一合成模式圖。Figure 6 is a first synthetic mode diagram of the coupler structure of the present invention.

圖7係本發明耦合器結構的第二合成模式圖,斷面維度為4.5μm×10μm及6μm×7μm,間隔s=2μm。Fig. 7 is a second synthetic pattern diagram of the coupler structure of the present invention, having a cross-sectional dimension of 4.5 μm × 10 μm and 6 μm × 7 μm, and an interval s = 2 μm.

圖8係本發明單波導的基本模式圖,寬度w=10μm,深度d=4.5μm。Figure 8 is a basic schematic view of a single waveguide of the present invention, having a width w = 10 μm and a depth d = 4.5 μm.

圖9係本發明單波導的基本模式圖,寬度w=7μm,深度d=6μm。Figure 9 is a basic schematic view of a single waveguide of the present invention, having a width w = 7 μm and a depth d = 6 μm.

圖10係本發明耦合係數及合成與個別模式整體重疊相對刻有光柵之波導的示意圖,間隔s=3μm,寬波導寬度10μm,窄波導寬度7μm。Fig. 10 is a schematic view showing a coupling coefficient of the present invention and a waveguide in which a grating is integrally overlapped with an individual pattern, with an interval of s = 3 μm, a width of a wide waveguide of 10 μm, and a width of a narrow waveguide of 7 μm.

圖11係本發明耦合係數及合成與個別模式整體重疊相對刻有光柵之波導的示意圖,間隔s=2.5μm,寬波導寬度10μm,窄波導寬度7μm。Fig. 11 is a schematic view showing a coupling coefficient of the present invention and a waveguide in which a grating is integrally overlapped with an individual pattern, with an interval of s = 2.5 μm, a width of a wide waveguide of 10 μm, and a width of a narrow waveguide of 7 μm.

圖12係本發明耦合係數及合成與個別模式整體重疊相對刻有光柵之波導的示意圖,間隔s=2μm,寬波導寬度10μm,窄波導寬度7μm。Fig. 12 is a schematic view showing a coupling coefficient of the present invention and a waveguide in which a grating is integrally overlapped with an individual pattern, with an interval of s = 2 μm, a wide waveguide width of 10 μm, and a narrow waveguide width of 7 μm.

圖13係本發明波導輸出模場量測的實驗設備示意圖。Figure 13 is a schematic diagram of an experimental apparatus for measuring the field of the waveguide output mode of the present invention.

圖14係本發明具光柵之寬波導的近場強度分佈圖,其所使用的ASE雷射是具有3mW的電力,照射在窄波導。Figure 14 is a near field intensity profile of a wide waveguide with a grating of the present invention using an ASE laser having a power of 3 mW, illuminating a narrow waveguide.

圖15係本發明具光柵之窄波導的近場強度分佈圖,其所使用的ASE雷射是具有3mW的電力,照射在窄波導。Figure 15 is a near field intensity profile of a narrow waveguide with a grating of the present invention using an ASE laser having a power of 3 mW, illuminating a narrow waveguide.

圖16係本發明傳輸光譜量測的實驗設備示意圖。Figure 16 is a schematic diagram of an experimental apparatus for transmission spectral measurement of the present invention.

圖17係本發明非對稱布拉格式聚合物波導過濾器的傳輸光譜圖,紅線代表實驗結果,藍線代表模擬結果。Figure 17 is a transmission spectrum diagram of the asymmetric Bragg polymer waveguide filter of the present invention, the red line represents the experimental result, and the blue line represents the simulation result.

附件1:圖1為本發明負光阻上非對稱波導耦合式樣的光學顯微照片,二波導溝槽斷面維度分別為6.8μm×6μm及11.3μm×6μm,二者的間距為2.3μm;圖2為本發明非對稱波導耦合器模子的光學顯微照片,正光阻填在溝槽內,二波導溝槽斷面維度分別為6.8μm×6μm及9.6μm×5μm,二者的間距為2.1μm。Attachment 1 is a photomicrograph of an asymmetric waveguide coupling pattern on a negative photoresist of the present invention. The cross-sectional dimensions of the two waveguide trenches are 6.8 μm×6 μm and 11.3 μm×6 μm, respectively, and the spacing between the two is 2.3 μm; 2 is an optical micrograph of the asymmetric waveguide coupler mold of the present invention, the positive light is resistively filled in the trench, and the cross-sectional dimensions of the two waveguide trenches are 6.8 μm×6 μm and 9.6 μm×5 μm, respectively, and the spacing between the two is 2.1. Mm.

附件2:圖1為掃瞄式電子顯微鏡SEM以30度傾角觀測矽膠圖章具光柵的波導(光柵週期500nm及深度約450nm);圖2為掃瞄式電子顯微鏡SEM觀測溝槽內顯示完整的光柵圖樣(尺寸為6.8μm×6μm及9.6μm×5μm,間隔約2.4μm,光柵長度15mm,及光柵深度約450nm。Attachment 2: Figure 1 is a scanning electron microscope SEM observation of a silica gel with a grating angle of 30 degrees (grating period 500nm and depth of about 450nm); Figure 2 is a scanning electron microscope SEM observation groove showing a complete grating Patterns (sizes 6.8 μm x 6 μm and 9.6 μm x 5 μm, spacing about 2.4 μm, grating length 15 mm, and grating depth about 450 nm).

附件3:圖1(a)為本發明過濾器寬波導(斷面尺寸為5μm×9.6μm)之輸出端的光學微影;圖1(b)為本發明過濾器窄波導(斷面深寬維度為6μm×6.8μm)之輸出端的光學微影;顯示在波導核心外並無未導層。Annex 3: Figure 1 (a) is an optical micro-image of the output end of the filter wide waveguide (section size 5 μm × 9.6 μm); Figure 1 (b) is a filter narrow waveguide (section depth and width dimension) Optical lithography at the output of 6 μm × 6.8 μm); there is no unguided layer outside the waveguide core.

附件4:參考文獻。Annex 4: References.

Claims (10)

一種具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其包括下列步驟:(A)於一基板上覆上一負光阻薄膜;(B)經由一光罩而對該負光阻薄膜照射紫外光,使該負光阻薄膜上成型不同寬度的一第一溝槽及一第二溝槽以做為一光阻模;(C)於該光阻模一半邊覆設一第一矽膠薄膜並填滿該第一溝槽,將該第一矽膠薄膜烘烤固化;(D)將一特定量的正光阻舖在該光阻模另一半邊上並填滿該第二溝槽;(E)以全影像微影干涉技術對該正光阻曝光而於該第二溝槽內形成一第一光柵圖樣;(F)將一第二矽膠薄膜覆設在該光阻模上,並填滿該第二溝槽及覆蓋黏著該第一矽膠薄膜,將該第二矽膠薄膜烘烤固化;(G)將該第二矽膠薄膜自該光阻模上剝離,而連帶使該第一矽膠薄膜自該光阻模上剝離;(H)將一第三矽膠薄膜覆設在該光阻模一半邊,並填滿該第二溝槽,將該第三矽膠薄膜烘烤固化;(I)將一第四矽膠薄膜覆設在該光阻模上,並填滿該第一溝槽及覆蓋黏著該第三矽膠薄膜,將該第四矽膠薄膜烘烤固化;(J)將該第四矽膠薄膜連同該第三矽膠薄膜自該光阻模上剝離,使該第一光柵圖樣轉印到該第三矽膠薄膜而形成一第二光柵圖樣,並由該第四矽膠薄膜結合該第三矽膠薄膜而形成一矽膠圖章,該矽膠圖章上具有與該第一溝槽及該第二溝槽形狀對應配合的一第一凸條及一第二凸條,該第二凸條上具有該第二光柵圖樣;(K)將該矽膠圖章覆設在一第一紫外光固化聚合物薄膜上,利用該第一凸條及該第二凸條使該第一紫外光固化聚合物薄膜上成型一第三溝槽及一第四溝槽,並將該矽膠圖章上的該第二光柵圖樣轉印在該第四溝槽底而形成一第三光柵圖樣;(L)將該第一紫外光固化聚合物薄膜照射寬帶紫外光而固化;(M)將該矽膠圖章自該第一紫外光固化聚合物薄膜移除,而以固化的該第一紫外光固化聚合物薄膜做為該過濾器的一包覆層;(N)將一特定量的第二紫外光固化聚合物注入該第三溝槽及該第四溝槽,經紫外光照射以分別形成波導核心;(O)將一第三紫外光固化聚合物薄膜舖置於該包覆層上,以封閉該第三溝槽及該第四溝槽;及(P)以紫外光照射第三紫外光固化聚合物薄膜,使該第三紫外光固化聚合物薄膜固化以形成一上覆蓋層,並使該上覆蓋層與該包覆層交聯,而完成該過濾器之製作。A method for fabricating an asymmetric Bragg coupling polymer filter having a single grating waveguide, comprising the steps of: (A) coating a substrate with a negative photoresist film; (B) passing the negative light through a mask The resistive film is irradiated with ultraviolet light, and a first trench and a second trench of different widths are formed on the negative photoresist film to form a photoresist film; (C) a half of the photoresist die is overlaid a first adhesive film is filled and the first silicone film is baked and cured; (D) a specific amount of positive photoresist is deposited on the other half of the photoresist mold and fills the second trench (E) exposing the positive photoresist with a full-image lithography interference technique to form a first grating pattern in the second trench; (F) coating a second silicone film on the photoresist pattern, and Filling the second trench and covering the first silicone film to bake and cure the second silicone film; (G) peeling the second silicone film from the photoresist film, and attaching the first silicone The film is peeled off from the photoresist mold; (H) a third silicone film is coated on one side of the photoresist mold, and fills the second trench, The third silicone film is baked and cured; (I) a fourth silicone film is coated on the photoresist mold, and the first trench is filled and covered with the third silicone film, and the fourth silicone film is baked. Curing; (J) peeling the fourth silicone film together with the third silicone film from the photoresist pattern, transferring the first grating pattern to the third silicone film to form a second grating pattern, and The fourth silicone film is combined with the third silicone film to form a silicone stamp having a first protrusion and a second protrusion corresponding to the shape of the first groove and the second groove. The second rib has the second grating pattern; (K) the squeegee stamp is coated on the first ultraviolet curable polymer film, and the first ridge and the second rib are used to make the first urethane Forming a third trench and a fourth trench on the photocurable polymer film, and transferring the second grating pattern on the silicone stamp to the bottom of the fourth trench to form a third grating pattern; Applying the first ultraviolet-curable polymer film to a broadband ultraviolet light to cure; (M) The glue stamp is removed from the first UV curable polymer film, and the cured first UV curable polymer film is used as a coating layer of the filter; (N) a specific amount of the second UV is The photocurable polymer is injected into the third trench and the fourth trench, and is irradiated with ultraviolet light to form a waveguide core respectively; (O) a third ultraviolet curable polymer film is deposited on the cladding layer to Blocking the third trench and the fourth trench; and (P) irradiating the third ultraviolet light curable polymer film with ultraviolet light to cure the third ultraviolet light curable polymer film to form an upper cover layer and The upper cover layer is crosslinked with the cover layer to complete the manufacture of the filter. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,步驟(A)中先於該基板上覆上一第四紫外光固化聚合物薄膜,再覆上該負光阻薄膜。The method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein in step (A), a fourth ultraviolet light curing polymer film is coated on the substrate, and then The negative photoresist film is applied. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,步驟(A)中的該第四紫外光固化聚合物薄膜為OG 146環氧樹脂。The method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein the fourth ultraviolet curable polymer film in the step (A) is an OG 146 epoxy resin. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,步驟(A)中的該負光阻係以1000 rpm,17秒的條件旋轉塗覆6.0μm厚度。The method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein the negative photoresist in step (A) is spin-coated at 6.0 rpm for 17 seconds. thickness. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,步驟(C)、(F)、(H)及(I)中烘烤溫度及時間分別為90℃及1小時。The method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein the baking temperatures and times in steps (C), (F), (H) and (I) are respectively 90 ° C and 1 hour. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,該光柵週期及深度分別為500nm及400-450nm。The method for fabricating an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein the grating period and depth are 500 nm and 400-450 nm, respectively. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,該紫外光固化聚合物的折射率在波長1550 nm的光源中為1.505,該第二紫外光固化聚合物的折射率在波長1550 nm的光源中為1.539。The method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein the refractive index of the ultraviolet curing polymer is 1.505 in a light source having a wavelength of 1550 nm, the second ultraviolet light The refractive index of the cured polymer was 1.539 in a light source having a wavelength of 1550 nm. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,步驟(M)紫外光的波長範圍為300-400nm。A method of manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein the ultraviolet light of the step (M) has a wavelength in the range of 300 to 400 nm. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,該第一溝槽及該第二溝槽的橫斷面深寬維度分別為5μm×9.7μm及6μm×6.9μm,且二者的間隔為2.4μm,耦合長度約15mm,總長約5cm。The method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein the first trench and the second trench have a cross-sectional depth and width dimension of 5 μm×9.7 μm, respectively. And 6 μm × 6.9 μm, and the interval between the two is 2.4 μm, the coupling length is about 15 mm, and the total length is about 5 cm. 如請求項1所述之具單光柵波導之非對稱布拉格耦合聚合物過濾器的製造方法,其中,在該第二紫外光固化聚合物注入該第三溝槽及該第四溝槽後,將一矽膠薄膜披覆在一玻璃載片,並被覆置在該第三溝槽及該第四溝槽上,並以適當壓力擠壓去除該第三溝槽及該第四溝槽外多餘的該第二紫外光固化聚合物,並在該第二紫外光固化聚合物經紫外光照射後,移除該玻璃載片,使該矽膠薄膜自該包覆層上剝離。The method for manufacturing an asymmetric Bragg coupling polymer filter having a single grating waveguide according to claim 1, wherein after the second ultraviolet light curing polymer is injected into the third trench and the fourth trench, a silicone film is coated on a glass slide and is coated on the third groove and the fourth groove, and is pressed by a suitable pressure to remove the third groove and the fourth groove The second ultraviolet light curing polymer, and after the second ultraviolet light curing polymer is irradiated with ultraviolet light, the glass slide is removed, and the silicone film is peeled off from the coating layer.
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