TW201242101A - Islanded carrier for light emitting device - Google Patents
Islanded carrier for light emitting device Download PDFInfo
- Publication number
- TW201242101A TW201242101A TW100142112A TW100142112A TW201242101A TW 201242101 A TW201242101 A TW 201242101A TW 100142112 A TW100142112 A TW 100142112A TW 100142112 A TW100142112 A TW 100142112A TW 201242101 A TW201242101 A TW 201242101A
- Authority
- TW
- Taiwan
- Prior art keywords
- carrier
- lead frame
- led
- led die
- conductive regions
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8585—Means for heat extraction or cooling being an interconnection
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Description
201242101 六、發明說明: 【發明所屬之技術領域】 本發明係關於積體電路(ic)製作及組裝領域,且特定而 言係關於發光裝置(LED)之製作。 【先前技術】 隨著半導體發光裝置(LED)之發光能力不斷改良,其在 習用照明應用中之使用不斷增加,以一成本效率方式提供 可靠之持久產品之競爭壓力亦不斷增加。儘管led產品之 成本相對較低,但即使每裝置節省幾美分亦可對利潤邊際 具有一重大影響,此歸因於此等裝置之日益成長之市場。 在減小提供發光裝置之個別晶粒之大小藉此減小材料成 本中已不斷取得進步,但搬運考量需要將該晶粒安裝於一 較大基板上。亦即,舉例而言,儘管半導體製造商具有可 拾取並放置可小至1毫米x丨毫米之個別晶粒且提供至每一 晶粒上之接觸件之連接的設備,但習慣上用於印刷電路製 造之設備並不適於放置或連接此等晶粒。以相似方式發 光裝置通常係插入式可替換物項,且需要足夠大以由人手 抓握。 圖1 A至圖1B圖解說明用於安裝一 LED.晶粒11〇之一實例 !生基板150。基板15〇通常係一陶瓷,諸如確酸铭(Ain)或 氧化鋁(α】2〇3),且一晶粒11〇與基板15〇之組合通常稱為一 陶瓷上裝置(DoC)。 圖1之實例性LED晶粒11 〇圖解說明四個發光元件丨丨6之 使用。接觸件112使得能夠將該等發光元件耦合至一外部 159866.doc 201242101 電力源。在此實例中,壓力夾122將晶粒11 〇固持至基板 150’以及提供至接觸件112之電搞合。壓力夾之使用促進 晶粒110之替換。 墊120提供將基板安裝式LED裝置附著至一外部電力 源’且可用作(舉例而言)用於將該裝置接合至一印刷電路 板或類似結構之接合墊。接合墊120提供與接觸件112相同 之功能,但如上文所提及,接合墊120明顯更大以促進共 同印刷電路板製造設備及技術。 基板150亦充當用於耗散發光元件116所產生之熱之一散 熱片。 圖1C圖解說明一替代配置,其中led晶粒11〇經由焊料 兀件122焊接至基板15〇上之墊120 ^在此實例性實施例 中,晶粒110中之一或多個通孔115或者其他内部路由提供 至發光元件116之耦合。在圖⑴之實例中,亦提供上部接 觸件112以使得LED晶粒可用於圖1B或圖1C之組態中。 圖ic之實例亦圖解說明LED晶粒焊接至的一散熱片墊 130之使用。此配置通常將提供LED晶粒11〇與基板15〇之 間的一經改良熱耦合,但一般在晶粒丨1〇之下表面上需要 一對應可焊接熱傳遞接觸件118。 儘管將導電跡線放置於陶瓷(諸如,墊12〇、13〇)上係一 成熟技術,但存在涉及製作具有此等墊12〇、13〇之陶瓷基 板之成本問4以及自該基板分離墊120、130之某種風 險’此歸因於通常用以提供此等墊之金屬之熱係數與該陶 竟基板之熱係數之間的不匹配。 139866.doc 201242101 【發明内容】 提供一種較低成本發光產品將係有利的。提供一種具有 潛在較高可靠性及/或較長操作壽命之發光產品亦將係有 利的。提供一種製作此等發光產品之成本效率方法亦將係 有利的。 此等優點及其他優點可藉由使用提供對LED晶粒之結構 性支撐以及至LED晶粒之電及熱搞合之一低成本傳導載體 元件之一製程而實現。提供一種包含至少一個載體元件之 引線框架,該載體元件經分割以形成該LED晶粒附著至的 可區分傳導區域。當自該框架分離該載體元件時,該等傳 導區域彼此電隔離。一電介質可放置於該載體元件之該 傳導區域之間。 【實施方式】 參考附圖進一步詳細地且以實例方式解釋本發明。 在以下說明中,出於解釋而非限制目的陳述特定細節 (諸如,特定架構、界面、技術物提供對本發明概念之 -透徹理解。然而’熟f此項技術者將顯而易I, 離此等特定細節之其他實施例中實踐本發明”乂相 式,本說明之正文係針對如各圖中所圖解說明之實例 施例’且並非意欲限制所主張之發明超 明確包含的限制。出於簡單及清晰目的,省略對眾= 之裝置、電路及方法之詳細說明以使對本發明之說 因不必要細節而模糊。 不s 並且在以下說㈣,參考通常所㈣之材料及製程以促 159866.doc 201242101 進對本文中所呈現之原理之較好及/或較容易理解,但熟 習此項技術者將認識到’本發明之原理並不限於此等參 考。 圖2A至圖2B圖解說明一實例性傳導載體上晶粒配置。 在此實例中’ LED晶粒110安裝於提供對晶粒}丨〇之結構性 支樓以及至晶粒110之電及熱搞合兩者之一傳導載體結構 210-220上。此實例中之載體結構包含兩個電導體21〇及一 熱傳遞導體220。 在此實例性實施例中,可使用習用SMD(表面安裝裝置) 焊料回流技術來將LED晶粒11 〇焊接至導體21 〇以及導體 220。由於導體210係導電的,因此可使用此等導體21〇之 任何可接達側或邊緣來達成自一外部源至LED晶粒丨1〇之 電耦合。以相似方式,可使用導體22〇之任何可接達側或 邊緣來達成熱麵合。 圖3圖解說明包含包括三個可區分傳導區域(對應於圖2A 至圖2B中之導體210、220)之一載體結構的一實例性引線 框架350。亦即,引線框架35〇包含呈界定用於耦合至1^1) 晶粒110之導體210、220之既定形狀及放置之一圖案之狹 縫或開口 355。開口 355之間的連接片357使導體2ι〇、22〇 保持附著至整體框架結構。舉例而言,引線框架35〇可係 一銅片,其足夠厚(例如,大於〇·75毫米、較佳係15毫 米,端視大小而定)以為圖2之發光裝置2〇〇提供主要結構 性支撐,但亦可使用其他導電材料。 為了清晰起見’本文中使用術語「區域」來指代框架上 159866.doc 201242101 最終將成為用於基於載體之發光裝置(諸如,圖2A中之裝 置200)之既定導體的區。由於此等區域及最終導體係相同 元件’因此在參考框架上之區域或裝置上之導體時將使用 相同元件符號210、220。以相似方式,由於此等導體 210、220之組合形成整體載體結構,因此該組合將稱為載 體結構210-220。 參考圖4之流程圖最佳地理解此引線框架350之使用。在 此實例中,使用實例性引線框架350及LED晶粒110之元件 符號來闡述圖4,但熟習此項技術者將認識到,該流程並 不限於此特定實例。 在410處,提供具有載體結構210-220之引線框架350 » 在420處,將LED晶粒11〇放置於載體結構21〇-220上。通 常’在每一載體結構21 〇_22〇上放置一個LED晶粒110,但 亦可在一單個載體結構上安裝多個led晶粒。 在430處,通常使用SMD焊料回流技術來將LED晶粒110 附著至載體結構210-220之對應傳導區域210、220,但亦 可使用其他方式來將LED晶粒11〇耦合至此等區域210、 220。舉例而言’若該LED晶粒不包含通孔115或經由其底 表面輕合之其他構件’則可使用習用線接合技術來將該晶 粒上之接觸件Π2線接合至區域21〇。 在某些實施例中,LED晶粒11〇本身可不依靠機械接觸 而附著至區域220,或許可添加有熱傳遞膏或化合物以確 保LED晶粒110與區域220之間的一高效熱耦合。以相似方 式’在某些實施例中’引線框架350可至少在至LED晶粒 159866.doc 201242101 110之接觸點處鍍覆有金以確保LED晶粒110與區域210之 間的一可靠電耦合。 在440處,通常藉由鋸斷將載體結構210-220連接至框架 350之剩餘部分之連接片357而自框架350分離載體結構 210-220(具有所附著之LED晶粒110),藉此產生圖2A至圖 2B之發光裝置200。 儘管將實例性框架350圖解說明為形成一個載體結構 2 1 0_220,但熟習此項技術者將認識到,亦可在一單個框 架上提供多個載體結構’如圖5及圖6之實例性框架550、 650中所圖解說明。 實例性框架550包含圖3之實例性框架350之一複製。在 此實例中’在框架550中提供十六個載體結構210 — 220,每 一載體結構210-220具有一所附著之LED晶粒11〇。 實例性框架650經設計以在自該框架移除具有所附著之 LED bb粒110之載體結構2 10-220時最小化浪費之材料。在 此實例中’載體結構210-220係交替地定位以減小框架650 中所需要之開口 355之數目,且使區域21〇、220保持附著 至框架650之連接片357係沿將在自框架65〇分離載體結構 210-220時產生之鑛口 660定位。在此實例中,將產生十六 個發光裝置(圖2中之200),但框架65〇之大小明顯小於圖5 中之框架550之大小。 圖7Α至圖7C圖解說明實例性載體結構。在此等實例 中,相對於晶粒110,載體結構21〇_22〇之大小約與圖】中 之基板150之大小相同。為了減小此等較大結構21〇22〇所 159866.doc
201242101 導致之晶粒110上之潛在應力,用一介電材料來填充導體 2 10、220之間的空間。以此方式,結構21 〇_220實質上係 自支樓的且在晶粒110上施加最小應力。
可在將LED晶粒110附著至載體結構21〇_22〇之前或之後 且在自框架分離載體結構210-220之前或之後或者兩者之 一組合之前或之後添加該電介質。舉例而言,在圖7B中, 導體210係以電介質715而隔離,且因此必須在自該框架分 離導體210之後已添加電介質715之至少一部分(在連接片 已將導體210固持至該框架之位置處)。然而,可在將LED 晶粒110附著至導體210、220之前填充此等導體之間的空 間。 圖7C圖解說明導體21〇可提供額外功能之事實。在此實 例中,導體210包含促進將裝置7〇〇插入至一對應插座(諸 如,電路板十之孔)中之接針形冑分7丄〇或允許替換 裝置700之一插頭。 以上僅圖解說明瞭本發明之原理。因此,將瞭解,熟習 此項技術者將能夠設想出各種配置,儘管未在本文中明確 闡述或展示該等配置,但其體現本發明之原理且因此屬於 以下申請專利範圍之精神及範疇内。 在解釋此等申請專利範圍時,應理解: a) 詞語「包括」並不排除一給定請求項中所列示之彼 等儿件或動作之外的其它元件或動作之存在; b) 一元件之前的詞語「一<「 $ )」及 一(an)」並不排除 複數個此等元件之存在; 159866.doc 201242101 )該等_ 4專利範圍中之任何參考符號並不限制其範 嘴; d) 數個「構件」可由同一物項或者以硬體或軟體實施 之結構或功能表示; e) 所揭不%件中之每__者可由若干硬體部分(例如,包 =電子電路及積體電子電路)、軟體部分(例如,電腦 程式化)及其任何組合組成; f) 硬體部分可包含一處理器’且軟體部分可儲存於— 非暫時性電腦可讀媒體上且可經組態以致使 所揭示元件中之-或多者之功能中的某些或全部功能订 成,)硬體部分可由類比及數位部分中之-者或兩者組 :一)者除二具體說明,否則所揭 者了組合在一起或被分離成其他部分; 0除非具體指示,否則卄尤咅办恭 列;及 否則並不意欲需要任何特定動作序 J)術語「複數個」元件包含兩個或兩個以上所 件’且並不暗示任何特定元件數目範圍;亦即,複數個_ 件可2兩個元件且可包含不可計量數目的元件。^ 【圖式簡單說明】 在附圖中: 7至H解說明兩㈣用 :至:—實例性傳導載體上晶:置 圓3圖解說明包含包括三個可區分傳導區域之一載趙結 I59866.doc 201242101 構的一實例性引線框架。 圖4圖解說明用於提供基於載體之發光裝置之一實例性 流程圖。 圖5圖解說明包含多個載體結構之一實例性引線框架。 圖6圖解說明包含多個載體結構之另一實例性引線框 架。 圖7Α至圖7C圖解說明實例性載體結構。 【主要元件符號說明】 110 發光裝置晶粒 112 上部接觸件 115 通孔 116 發光元件 118 可焊接熱傳遞接觸件 120 接合墊 122 壓力夾/焊料元件 130 散熱片墊 150 基板 200 發光裝置 210 傳導載體結構/傳導區域/電導體 220 傳導載體結構/傳導區域/熱傳遞導體 350 引線框架 355 狹縫/開口 357 連接片 550 框架 159866.doc 201242101 650 框架 660 鋸口 700 裝置 710 接針形部分 715 電介質 159866.doc -12- s
Claims (1)
- 201242101 七、申請專利範圍: 1· 一種方法,其包括: 提供包含至少一個載體元件之一引線框架,該載體元 件係傳導的’且經分割以形成複數個可區分傳導區域, . 將至少一個LED晶粒放置於該載體元件上, • 將該LED晶粒上之接觸件耦合至該等傳導區域,及 自該引線框架分離該載體元件以提供一 LED裝置,其 中該等傳導區域中之每一者係彼此電隔離的。 2. 如請求項1之方法’其包含在該等可區分傳導區域之間 放置一介電材料。 3. 如請求項I之方法’其中該等可區分傳導區域包含:一 導熱區域,其經組態以自該LED晶粒耗散熱;及一或多 個電極’其將該LED晶粒耦合至一外部能量源。 4. 如凊求項1之方法,其包含藉由根據對應於該複數個可 區分傳導區域之一圖案自該引線框架移除材料而形成該 引線框架。 5. 如請求項1之方法’其中該複數個可區分傳導區域包 含:一陽極區域、一陰極區域及一熱傳遞區域,其中該 陽極區域及該陰極區域經提供以促進分別與該led晶粒 . 相關聯之陽極電極與陰極之耦合。 6·如請求項1之方法,其中該耦合包含回流焊接。 7·如請求項1之方法,其中該引線框架包括一銅片。 8· 一種發光裝置,其包括: 複數個載體元件,及 159866.doc 201242101 一led晶粒,其黏著至該複數個載體元件, 其中該等載體元件提供: 對該裝置之主要結構性支撐,及 至β玄LED晶粒之電及熱耗合。 9. 如請求項8之發光裝置,其包含將該等載體元件彼此分 離之介電材料。 10. 如請求項8之發光裝置,其中該等載體元件中之一或多 者包含促進將該裝置插入於一對應插座中之一接針結 構。 11. 如請求項8之發光裝置,其中該等載體元件中之每一者 包括銅。 12. 如請求項8之發光裝置,其中該等載體元件中之每一者 係至少0.75毫米厚。 13·如請求項8之發光裝置,其中該LED晶粒係藉助焊料而黏 著至該複數個載體元件。 14. 如請求項8之發光裝置,其中該LED晶粒包含發射光穿過 該LED晶粒之一頂表面之一或多個發光元件且該led 晶粒係經由該LED晶粒之與該頂表面相對之一底表面上 之接觸件而黏著至該複數個載體元件。 15. 如請求項8之發光裝置,其中該等載體元件中之一或多 ^經由該載體元件之一底表面以及一或多個邊緣表面而 提供至該led晶粒之電耦合。 16. —種引線框架,其包括: 至少一個載體元件,該載體元件係傳導的,且經分割 159866.doc 201242101 以形成複數個可區分傳導區域,及 至少一個LED晶粒,其在該載體; 六你必執菔兀件上,耦合至該複 數個可區分傳導區域。 17.如請求項16之引線框架’其包含介於該等可區分傳導區 • 域之間的介電材料。 ,I8·如請求項16之引線框架,其中該引線框架係一銅片。 19. 如明求項丨6之引線框架,其中該引線框架係至少〇 75毫 米厚。 20. 如請求項16之引線框架,其中該等載體元件中之一或多 者經由該載體元件之一底表面以及一或多個邊緣表面而 提供至該LED晶粒之電耦合。 159866.doc
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| CN103201863A (zh) | 2013-07-10 |
| TW201813136A (zh) | 2018-04-01 |
| US9172018B2 (en) | 2015-10-27 |
| JP6738785B2 (ja) | 2020-08-12 |
| BR112013012333A2 (pt) | 2019-03-06 |
| JP2018022930A (ja) | 2018-02-08 |
| US9997686B2 (en) | 2018-06-12 |
| TW201639197A (zh) | 2016-11-01 |
| RU2721101C2 (ru) | 2020-05-15 |
| JP2013543277A (ja) | 2013-11-28 |
| JP6297838B2 (ja) | 2018-03-20 |
| RU2013127670A (ru) | 2014-12-27 |
| RU2016133432A (ru) | 2018-12-10 |
| US20130221386A1 (en) | 2013-08-29 |
| EP2641279A1 (en) | 2013-09-25 |
| CN103201863B (zh) | 2016-04-13 |
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