201240339 六、發明說明： 【發明所屬之技術領域】 本發明是有關作爲藉由對向配置的第1密封構件及第2 密封構件來密封電子零件元件的電極之電子零件封裝的第 1密封構件使用的電子零件封裝用密封構件、使用此電子 零件封裝用密封構件而成的電子零件封裝、及該電子零件 封裝用密封構件的製造方法。 【先前技術】 電子零件封裝的內部空間，爲了防止搭載於此內部空 間的電子零件元件的電極特性劣化，而被氣密密封。如此 的內部空間被氣密密封的電子零件封裝，例如可舉水晶振 動子等的壓電振動裝置。 此種的電子零件封裝有由基座及蓋等的2個密封構件 所構成，其框體爲構成長方體的封裝者。在如此的封裝 的內部空間，壓電振動片等的電子零件元件會被保持接 合於基座。然後，在基座與蓋接合下，封裝的內部空間 的電子零件元件的電極會被氣密密封（例如參照專利文 獻1 )。 在專利文獻1所示那樣的水晶振動子封裝（亦即電子 零件封裝）的基座設有貫通該基座的基材之貫通孔。然後 ，經由此貫通孔來電性連接設於基座的兩主面的電極彼此 間。 在如此設於基座的貫通孔中充塡有導電構件，此導電 -5- 201240339 構件會與設於基座的兩主面的電極連接，藉此設於兩主面 的電極彼此間會導通，且保持封裝的內部空間的氣密性。 在此，導電構件在專利文獻1中揭示有銀膏、及嵌合於貫 通孔的金屬構件。 [先行技術文献] [專利文獻] [專利文獻1]特開2002-124845號公報 【發明內容】 (發明所欲解決的課題） 可是，近年來在壓電振動裝置等的電子零件封裝被要 求小型化，隨之，設於上述那樣的基座等的密封構件之貫 通孔具有微小化的傾向。 但，像在專利文獻1所揭示的銀膏那樣的導電性膏， 一般是具有高黏性，所以難以往微小的貫通孔充塡。並且 ，在將作爲導電構件的金屬構件充塡於微小的貫通孔時， 難以製造密合於微小的貫通孔之微小的金屬構件。 因此，在將導電性膏或金屬構件充塡至微小的貫通孔 時，會有產生充塡不良的情形。而且，因爲如此的充塡不 良，貫通孔不會被完全密封，所以有損封裝的內部空間的 氣密性。 本發明是有鑑於如此的狀況而硏發者，以提供一種在 作爲電子零件封裝的密封構件使用下，可使該電子零件封 201240339 裝的內部具備充分的氣密性之電子零件封裝用密封構件爲 目的。 又，本發明的其他目的是在於提供一種封裝的內部的 氣密性被充分地保持之電子零件封裝。 又，本發明的目的是在於提供一種在作爲電子零件封 裝的密封構件使用下’可使該電子零件封裝的內部具備充 分的氣密性之電子零件封裝用密封構件的製造方法。 (用以解決課題的手段） 爲了達成上述的目的，本發明的電子零件封裝用密封 構件，係作爲藉由對向配置的第1密封構件及第2密封構件 來氣密密封電子零件元件的電極之電子零件封裝的上述第 1密封構件使用，其特徵係具備： 貫通孔，其係貫通該電子零件封裝用密封構件的基材 » 內部電極，其係被形成於上述基材之與上述第2密封 構件的對向面； 外部電極，其係被形成於上述基材之與上述對向面對 向的面；及 貫通電極，其係被形成於電性連接上述內部電極與上 述外部電極的上述貫通孔的內側面， 上述貫通孔的至少一方的開口面係被樹脂材所密封。 若根據此構成，則藉由沿著貫通孔的內側面所形成的 貫通電極來電性連接內部電極與外部電極的同時，在該貫 201240339 通孔的導通狀態安定。又，由於貫通孔的至少一方的開口 面會藉由樹脂材來密封，所以可使利用該電子零件封裝用 密封構件的電子零件封裝的內部具備充分的氣密性。 另外，在本發明所謂往該電子零件封裝用密封構件的 基材之電極（內部電極、外部電極、及貫通電極）的形成 是除了直接在基材表面形成電極以外，還包含在與基材表 面之間經由某些的物質來形成電極的槪念。 又，本發明的電子零件封裝用密封構件中，上述樹 脂材係具有感光性，上述貫通孔的至少一方的開口面可 藉由配置於此開口面的上述樹脂材所構成的樹脂圖案來 密封。 若根據此構成，則貫通孔的至少一方的開口面可藉由 被配置於此開口面之具有感光性的樹脂材所構成的樹脂圖 案來確實地密封。如此的樹脂圖案是例如藉由使用具有感 光性的樹脂材的光蝕刻法等來簡單且精度佳地形成，使設 置該電子零件封裝用密封構件的電子零件封裝的內部具備 充分的氣密性。 又，本發明的電子零件封裝用密封構件中，亦可在上 述貫通孔的內部充塡有樹脂材。 若根據此構成，則因爲貫通孔可藉由被充塡於此貫通 孔的樹脂材來確實地密封，所以可使利用該電子零件封裝 用密封構件的電子零件封裝的內部確實地具備充分的氣密 性。 又，本發明的電子零件封裝用密封構件中，上述內部 -8- 201240339 電極的至少一部分的表面可被樹脂材所被覆。 若根據此構成，則因爲內部電極的至少一部分的表面 被樹脂材所被覆，所以當被樹脂材被覆的部分的內部電極 的電極表面爲以Cu等容易氧化的金屬所構成時，可防止電 極表面的氧化。 又，本發明的電子零件封裝用密封構件中，上述外部 電極的至少一部分的表面可被樹脂材所被覆。 若根據此構成，則因爲外部電極的至少一部分的表面 被樹脂材所被覆，所以當被樹脂材被覆的部分的外部電極 的電極表面爲以Cu等容易氧化的金屬所構成時，可防止電 極表面的氧化。 又，本發明的電子零件封裝用密封構件中，樹脂材可 介於上述基材與上述內部電極、上述外部電極、及上述貫 通電極的各個之間。 若根據此構成，則因爲在該電子零件封裝用密封構件 的基材與內部電極、外部電極、及貫通電極的各個之間介 在有樹脂材，所以不會有分別構成內部電極、外部電極、 及貫通電極的金屬與該電子零件封裝用密封構件的基材反 應的情形，不會有因爲與分別構成內部電極、外部電極、 及貫通電極的金屬反應，而使得該電子零件封裝用密封構 件的基材劣化的情形。 又，本發明的電子零件封裝用密封構件中，亦可在上 述內部電極及上述外部電極的至少一方之上，經由樹脂材 而形成其他的電極。 -9- 201240339 若根據此構成，則可在該電子零件封裝用密封構件的 厚度方向具備複數的配線圖案。 又，本發明的電子零件封裝，係藉由對向配置的第1 密封構件及第2密封構件來氣密密封電子零件元件的電極 ，其特徵爲： 上述第1密封構件爲上述本發明的電子零件封裝用密 封構件。 若根據此構成，則因爲使用上述本發明的電子零件封 裝用密封構件作爲第1密封構件，所以可藉由該電子零件 封裝用密封構件來充分地保持封裝的內部的氣密性。而且 ，在設於該電子零件封裝用密封構件的貫通孔中可確保安 定的導通狀態。 又，本發明的電子零件封裝用密封構件的製造方法， 係用以製造電子零件封裝用密封構件的製造方法，該電子 零件封裝用密封構件係作爲藉由對向配置的第1密封構件 及第2密封構件來氣密密封電子零件元件的電極之電子零 件封裝的上述第1密封構件使用，其特徵係具有： 貫通孔形成工程，其係形成貫通該電子零件封裝用密 封構件的基材之貫通孔： 電極形成工程，其係對上述基材形成：位於與上述第 2密封構件的對向面之內部電極、及位於與上述對向面對 向的面之外部電極、及沿著上述貫通孔的內側面之貫通電 極：及 封孔工程，其係以樹脂材來密封上述貫通孔的至少一 -10- 201240339 方的開口面。 若根據此製造方法，則在電極形成工程，因爲形成沿 著貫通孔的內側面之貫通電極，所以可藉由此貫通電極來 電性連接內部電極與外部電極，且可製造一在貫通孔的內 部之導通狀態爲安定的電子零件封裝用密封構件。 又，由於具有藉由樹脂材來密封實通孔的至少一方的 開口面之封孔工程，因此可製造一作爲電子零件封裝的第 1密封構件使用時，可使該電子零件封裝的內部具備充分 的氣密性之電子零件封裝用密封構件。 又，本發明的電子零件封裝用密封構件的製造方法中 ，上述封孔工程亦可包含：藉由使用具有感光性的上述樹 脂材之光蝕刻法來形成密封上述貫通孔的至少一方的開口 面之樹脂圖案的工程。 若根據此製造方法，則可藉由使用具有感光性的樹脂 材的光蝕刻法來簡單且精度佳形成樹脂圖案，其結果，可 藉由樹脂圖案來確實地密封貫通孔的至少一方的開口面。 [發明的效果] 若根據本發明的電子零件封裝用密封構件，則可提供 一種在作爲電子零件封裝的密封構件使用下，可使該電子 零件封裝的內部具備充分的氣密性之電子零件封裝用密封 構件。 又，若根據本發明的電子零件封裝，則可提供一種封 裝內部的氣密性被充分地確保之電子零件封裝。 -11 - 201240339 又，若根據本發明的電子零件封裝用密封構件的製造 方法，則在作爲電子零件封裝的密封構件使用下，可製造 —可使該電子零件封裝的內部具備充分的氣密性之電子零 件封裝用密封構件。 【實施方式】 以下，參照圖面來說明有關本發明的實施形態1〜6。 另外，在以下所示的實施形態1〜4、及6是將本發明的電 子零件封裝適用於壓電振動裝置的水晶振動子的封裝，更 採用壓電振動片的AT-CUT水晶振動片作爲電子零件元件 時。並且，在實施形態5是將本發明的電子零件封裝適用 於壓電振動裝置的水晶振盪器的封裝，更採用壓電振動片 的AT-CUT水晶振動片及1C晶片作爲電子零件元件時。 <實施形態1> 圖1是公開實施形態1的水晶振動子的內部空間的槪略 剖面圖。又，圖2A〜圖2C是表示實施形態1的基座的槪略 構成的槪略圖，圖2A是槪略平面圖，圖2B是表示沿著圖 2 A的一點鏈線來切斷基座時的切斷面的狀態的槪略剖面 圖，圖2C是槪略底面圖。 並且，圖3A及圖3B是表示實施形態1的蓋的槪略構成 的槪略圖，圖3A是槪略剖面圖，圖3B是槪略底面圖。而 且，圖4是實施形態1的水晶振動片的槪略底面圖。 在實施形態1的水晶振動子1，如圖1所示，設有：由 -12- 201240339 件動 零振 子晶 s K 獨 才 稱封 明密 發密 本氣 在以 C 用 2 片， 少 2 動片 振動 晶振 水晶 的水 成此 構持 所保 T 、 U ) C 竽 T-件 A 元 片2的基座4 (在本發明稱作爲第1密封構件的電子零件封 裝用密封構件）、及配置成與基座4對向，用以氣密密封 保持於基座4的水晶振動片2的激發電極31，32 (在本發明 稱電子零件元件的電極）的蓋6 (在本發明稱第2密封構件 )° 此水晶振動子1是構成由基座4及蓋6所構成的封裝（ 在本發明稱電子零件封裝），基座4與蓋6是藉由由Au及 Sn的合金所構成的接合材71來接合，形成被氣密密封的內 部空間1 1。在此內部空間1 1，水晶振動片2是藉由使用金 凸塊等的導電性凸塊（未圖示）之FCB法（Flip Chip Bonding)來電氣機械性地超音波接合於基座4。另外，基 座4與水晶振動片2亦可藉由導電性樹脂接合材來接合。 其次，說明有關此水晶振動子1的各構成。 基座4是由矽硼酸玻璃等的玻璃材料所構成，如圖1及 圖2A〜圖2C所示，形成由底部41、及沿著基座4的一主面 42的外周而從底部41延伸至上方的壁部44所構成的箱狀體 。基座4是藉由光餓刻法（Photolithography)來餓刻長方 體的一片板所成形。 基座4的壁部44的頂面是與蓋6的接合面，在此接合面 設有用以和蓋6接合的第1接合層45。如圖2B所示，第1接 合層45是由在濺射膜451上形成電鍍膜452的複數層的層疊 構造所構成。濺射膜45 1是在藉由濺射法來濺射形成之Mo -13- 201240339 所構成的Mo膜上藉由濺射法來濺射形成Au所構成的Au膜 。並且，電鍍膜452是在濺射膜451上電鍍形成Au所構成 的Au膜。 在基座4是形成有藉由底部41及壁部44所包圍的空腔 46，如圖1所示，此空腔46是形成平面視矩形狀，且空腔 46的壁面是形成傾斜狀。另外，在實施形態1中，空腔46 是形成平面視長方形。 並且，在空腔46的底面461，2個的台座部411，412是 在空腔46的短邊方向設成彼此對向。該等台座部411，412 是分別接於沿著空腔46的底面461的短邊方向的邊L1，且 與沿著此短邊方向的邊L1鄰接，接於沿著底面461的長邊 方向的邊L2，L3而設置。 而且，在基座4的平面視長方形的框體背面（另一主 面43)形成有2個的城堡（castellation) 47，48(參照圖1 、圖2B、及圖2C )。城堡47是形成於框體側面，沿著另 —主面43的短邊方向的一側邊的全體、及與此一側邊鄰接 ，沿著另一主面43的長邊方向的二個側邊的一部分而形成 。城堡48是形成於框體側面，沿著另一主面43的短邊方向 的另一側邊的全體、及與此另一側邊鄰接，沿著另一主面 43的長邊方向的二個側邊的一部分而形成。另外，在實施 形態1是以壁面對基座4的另一主面43呈傾斜的方式形成2 個的城堡47，48 » 並且’如圖1及圖2A〜圖2C所示，在基座4中形成有 貫通基座4的基材之貫通孔49。此貫通孔49的內側面491是 -14- 201240339 對基座4的一主面42及另一主面43具傾斜形成傾斜狀。貫 通孔49的直徑在基座4的另一主面43的側的端部成爲最大 ，在基座4的一主面42的側的端部成爲最小。 而且’在基座4的基材形成有：分別與水晶振動片2的 激發電極31’ 32電氣機械性地接合的—對電極焊墊51，52 、及與外部零件或外部機器電性連接的外部端子電極53， 54、及使電極焊墊51與外部端子電極53及電極焊墊52與外 部端子電極54電性連接的配線圖案（圖示省略）。藉由該 等電極焊墊51，52、外部端子電極53，54及配線圖案來構 成基座4的電極55，56，57。電極焊墊51，52是形成於台 座部411，412的表面，外部端子電極53，54是形成於城堡 47 ’ 48。而且，配線圖案是經由貫通孔49的內側面491來 從基座4的一主面42的電極焊墊51，52形成到另一主面43 的外部端子電極53，54。 另外，形成於基座4的基材之電極55，56，57中，將 形成於基座4的基材的一主面42 (貫通孔49的開口面492除 外）之電極55稱爲內部電極（以下需要與其他的電極56， 57區別時是記爲內部電極55)，將形成於基座4的基材的 另一主面43 (貫通孔49的開口面493除外）之電極56稱爲 外部電極（以下需要與其他的電極55，5 7區別時是記爲外 部電極56)，且將從貫通孔49的內側面491到貫通孔49的 開口面49 2，493而形成的電極5 7稱爲貫通電極（以下需要 與其他的電極55，56區別時是記爲貫通電極57 )。亦即， 在本實施形態1中，貫通電極57是形成於貫通孔49的內側 -15- 201240339 面491的全體及貫通電極57的開口面492及493的周緣部。 含電極焊墊51’ 52的內部電極55、含外部端子電極53 ’ 54的外部電極56、及貫通電極57是由與第1接合層45相 同的材料所構成，和第1接合層45同時形成》 並且，在基座4的一主面42的空腔46的底面461的一半 以上的區域配有樹脂圖案58 (樹脂材），藉由樹脂圖案58 來密封位於基座4的一主面42側的開口面492，且樹脂被覆 除了電極焊墊51，52之內部電極55的一部分的表面》在此 ’構成樹脂圖案58的樹脂材是可使用任何與構成基座4的 材料（例如玻璃材料）的密着性良好的樹脂材，可適宜使 用由苯並環丁燃（Benzocyclobutene， BCB)、聚苯嚼哩 、環氧基、聚醯亞胺、或氟系樹脂所構成的樹脂材。另外 ，在實施形態1是藉由光蝕刻法來將樹脂圖案58形成於空 腔46的底面461，構成樹脂圖案58的樹脂材是使用具有感 光性的樹脂材。另外，在本發明所謂具有感光性的樹脂材 是除了由具有感光性的樹脂所構成的樹脂材以外，還廣義 地包括含感光劑及樹脂的感光性樹脂組成物。 蓋6是如圖1、圖3A、及圖3B所示，由矽硼酸玻璃等 的玻璃材料所構成，形成長方體的一片板。此蓋6是沿著 下面的外周而形成有第2接合層61 » 蓋6的第2接合層61是如圖3A所示由複數層的層疊構 造所構成，該複數層的層疊構造是形成有由Mo所構成的 Mo膜611，且在其上形成有由Au所構成的Au膜612。Mo膜 611是藉由濺射法來濺射形成。Au膜612是藉由濺射法來 -16- 201240339 濺射形成。 並且，在蓋6的第2接合層61之上，與基座4的接合前 ，如圖3A及圖3B所示，層疊接合材71。接合材71是由： 層疊於第2接合層61上的Au/Sn膜711、及層疊於Au/Sn膜 711上而形成的Au膜712所構成。在此，Au/Sn膜711是由 :層疊於第2接合層61上而被電鍍形成的Au膜、及被電鍍 形成於此Au膜上的Sn膜所構成。Au膜712是由：層疊於 Au/Sn膜711上而被電鍍形成的Au打底電鍍膜、及層疊於 Au打底電鍍膜上而被電鍍形成的Au電鏟膜所構成。在如 此的接合材71中’ Au/Sn膜711是藉由加熱而溶融，成爲 AuSn合金膜。另外，接合材71亦可藉由在蓋6的第2接合 層61上電鍍AuSn合金而構成者。 水晶振動片2是由AT-CUT水晶片的基板21所構成，其 外形是如圖1及圖4所示，兩主面22，23爲形成大致矩形狀 的一片板的長方體。 在此水晶振動片2設有構成振動區域的振動部26、及 與基座4的電極焊墊51，52接合的接合部27，振動部26與 接合部27會被一體成形而構成基板21。並且，在接合部27 是使基板21的平面視短邊的中央部分24缺口。 在此水晶振動片2形成有進行激發的一對的激發電極 31，32、及與基座4的電極焊墊51，52電氣機械性地接合 的一對的端子電極33，34、及將一對的激發電極31，32拉 出至一對的端子電極33，34的拉出電極35，36。一對的激 發電極31，32是藉由拉出電極35，36來繞拉而分別電性連 -17- 201240339 接至一對的端子電極33，34。 —對的激發電極31，32是與基板21的兩主面22，23， 振動部26的平面視中央對向形成。該等一對的激發電極31 ，32是例如藉由從基板21側依Cr、Au的順序層疊而成的 Cr-Au膜所構成。 —對的端子電極33，34是被形成於接合部27的另一主 面23。一對的端子電極33，34之中的一端子電極33是被形 成於包含沿著基板21的長邊方向的一側邊的其附近，另一 端子電極3 4是被形成於包含沿著基板21的長邊方向的另一 側邊的其附近。該等一對的端子電極33, 3 4是例如與激發 電極31，32同樣，藉由從基板21側依Cr、Au的順序層疊 而成的Cr-Au膜所構成。並且，如圖4所示，一對的端子電 極33，34是形成由上層及下曆所構成的二層構造，上層是 由Au所構成，下層是由Cr-Au所構成。下層的主面（平面 視的面）的面積相對於上層的主面（平面視的面）的面積 大。 拉出電極35，36是被形成於振動部26及接合部27，從 振動部26到接合部27，不對向地形成於基板21的兩主面22 ，23。該等拉出電極35，36是例如與激發電極31，32同樣 ，藉由從基板21側依Cr、Au的順序層疊而成的Cr-Au膜所 構成。 由上述的構成所構成的水晶振動子1，如圖1所示，基 座4與水晶振動片2是經由導電性凸塊（未圖示）利用FCB 法來電氣機械性地超音波接合。藉由此接合，水晶振動片 -18- 201240339 2的激發電極31，32會經由拉出電極35，36、端子電極33 ，34、導電性凸塊來電氣機械性地接合至基座4的電極焊 墊5 1，52，在基座4搭載水晶振動片2。然後，在搭載水晶 振動片2的基座4，藉由FCB法來暫時接合蓋6，然後，藉 由在氮環境下加熱，接合材71、第1接合層45及第2接合層 61會溶融，藉此，蓋6的第2接合層61會經由接合材71來接 合至基座4的第1接合層45，而製造一氣密密封水晶振動片 2的水晶振動子1。導電性凸塊是使用非流動性構件的電鍍 凸塊。 其次，利用圖5A〜圖23 B來說明此水晶振動子1及基 座4的製造方法。另外，在圖5A〜圖23B的各圖中，圖號 中含A的圖（以下稱A圖）是基座4的製造工程的一工程之 晶圓的部分槪略平面圖，圖號中含B的圖是沿著A圖的一 點鏈線來切斷A圖所示的晶圓時的切斷面的狀態槪略剖面 圖。 首先，將由形成多數個基座4的玻璃材料所構成的晶 圓8的兩主面洗淨（參照圖5A及圖5B)。 一旦完成晶圓8的洗淨，則如圖6A及圖6B所示，在其 兩主面81，82形成保護層91。具體而言，在晶圓8的兩主 面81，82藉由濺射法來濺射形成由Mo所構成的Mo層之後 ，在Mo層上藉由濺射法來濺射形成Au層，形成由Mo層及 Au層所構成的保護層91。 將保護層9 1形成於晶圓8的兩主面8 1，82之後，如圖 7A及圖7B所示，在保護層91上藉由旋轉塗佈法來塗佈光 -19- 201240339 阻劑，形成正光阻層94。 然後，將正光阻層94形成於保護層91上之後，對圖 2A〜圖2C所示的基座4的外形、空腔46的底面（除了形成 台座部411，412的部分以外）、及形成貫通孔49的位置上 的正光阻層94，進行曝光及顯像。其次，蝕刻藉由曝光及 顯像而露出的基座4的外形、空腔46的底面（除了形成台 座部411，412的部分以外）、及形成有貫通孔49的位置上 的保護層91。 在蝕刻基座4的外形、空腔46的底面（除了形成台座 部411，412的部分以外）、及形成貫通孔49的位置上的保 護層91之後，在晶圓8上藉由旋轉塗佈毕來塗佈光阻劑， 形成新的正光阻層94。 在形成新的正光阻層94之後，對基座4的外形、空腔 46的底面（包含形成台座部411，412的部分）、及形成貫 通孔49的位置上的正光阻層94，進行曝光及顯像，如圖 8 A及圖8B所示，使基座的外形、空腔46的底面（除了形 成台座部411，412的部分以外）、及形成貫通孔49的部分 的晶圓8露出，且使形成台座部411，412的位置上的保護 層91露出。 其次，如圖9A及圖9B所示，以保護層91及正光阻層 94作爲遮罩，藉由使用蝕刻液的濕蝕刻法來蝕刻形成基座 4的外形的一部分、空腔46的一部分、及貫通孔49的一部 分（內側面491的一部分）。 在完成晶圓8的鈾刻之後，如圖10A及圖10B所示，金 -20- 201240339 屬蝕刻位於（露出於）形成台座部411，412的位置上的保 護層91。 在金屬蝕刻位於形成台座部411，412的位置上的保護 層91之後，如圖11A及圖11B所示，以保護層91及正光阻 層94作爲遮罩，藉由使用蝕刻液的濕蝕刻法，蝕刻形成基 座4的外形的全體、空腔46的全體（包含台座部411，412 )、及貫通孔49的全體（內側面491的全體）。 在完成晶圓8的蝕刻之後，如圖1 2 A及圖1 2 B所示，剝 離除去正光阻層94。 在剝離除去正光阻層94之後，如圖13A及圖13B所示 ，金屬蝕刻所露出的保護層91而除去，使晶圓8的兩主面 81，82的全面露出。 在金屬鈾刻保護層91之後，如圖14A及圖14B所示， 在晶圓8 (兩主面81，82及貫通孔49的內側面491 )形成金 屬層92。具體而言，在晶圓8(兩主面81，82及貫通孔49 的內側面491 )藉由濺射法來濺射形成Mo所構成的Mo層之 後，在Mo層上藉由濺射法來濺射形成Au所構成的Au層而 層疊形成由Mo層及Au層所構成的金屬層92。在此形成的 金屬層92會成爲構成第1接合層45的濺射膜451 (參照圖2B )° 在將金屬層92形成於晶圓8的兩主面81，82之後，在 金屬層92上藉由浸漬塗佈法來塗佈光阻劑，形成新的正光 阻層94。 在將正光阻層94形成於金屬層92上之後，對基座4的 -21 - 201240339 第1接合層45、電極焊墊51，52、外部端子電極53，54、 及形成配線圖案的位置上的正光阻層94，進行曝光及顯像 ，如圖15A及圖15B所示，使第1接合層45、電極焊墊51， 52、外部端子電極53，54、及形成配線圖案的位置上的金 屬層92露出。 在進行曝光及顯像而露出的金屬層92上，如圖1 6A及 圖16B所示，電鍍Au而形成電鍍層93，形成第1接合層45 、電極焊墊51，52、外部端子電極53，54及配線圖案的外 層膜。另外，在此形成的電鍍層93會成爲第1接合層45的 電鍍膜452 (參照圖2B)。 在形成第1接合層45、電極焊墊51，52、外部端子電 極5 3，5 4及配線圖案之後，如圖1 7 A及圖1 7 B所示，剝離 除去正光阻層94。 其次，如圖18A及圖18B所示，在晶圓8上藉由浸漬塗 佈法來塗佈光阻劑，形成新的正光阻層94。 在將正光阻層94形成於晶圓8上之後，爲了形成第1接 合層45、電極焊墊51，52、外部端子電極53，54及配線圖 案，而對形成第1接合層45、電極焊墊51，52、外部端子 電極53，54及配線圖案的位置以外的晶圓8上的正光阻層 94進行曝光及顯像，如圖19A及圖19B所示，使形成第1接 合層45、電極焊墊51，52、外部端子電極53，54及配線圖 案的位置以外的金屬層92露出。 其次，如圖20A及圖20B所示，金屬蝕刻除去進行曝 光及顯像而露出的金屬層92，形成第1接合層45、電極焊 -22- 201240339 墊51，52、外部端子電極53，54及配線圖案。 形成第1接合層45、電極焊墊51，52、外部端子電極 53，54及配線圖案之後、如圖21A及圖21B所示、剝離除 去正光阻層94。 從晶圓8剝離除去正光阻層94之後，如圖22A及圖22B 所示，在晶圓8的兩主面81，82及貫通孔49的開口面492, 493上藉由浸漬塗佈法或噴塗法來塗佈具有感光性的樹脂 材，形成樹脂層95。 將樹脂層95形成於晶圓8上之後，如圖23A及圖23B所 示，對形成配線圖案58的位置以外的位置上的樹脂層95進 行曝光及顯像，形成樹脂圖案58。藉由此樹脂圖案58，以 樹脂密封位於晶圓8的一主面81側的貫通孔49的開口面492 ，且被覆形成於晶圓8的一主面81的配線圖案（內部電極 55的一部分）的表面。 形成樹脂圖案5 8後，個別分割多數個形成於晶圓8的 基座4，而使小片化，製造多數個圖2A〜圖2C所示的基座 4 〇 在圖2A〜圖2C所示的基座4配置圖4所示的水晶振動 片2，經由導電性凸塊，利用FCB法來將水晶振動片2電氣 機械性地超音波接合於基座4，而於基座4搭載保持水晶振 動片2。並且，在別工程，於蓋6的第2接合層61上層疊接 合材7 1 (參照圖3 A及圖3 B )。然後，在搭載保持水晶振 動片2的基座4藉由FCB法來暫時接合蓋6，更在氮環境下 加熱’使接合材71、第1接合層45及第2接合層61溶融，經 -23- 201240339 由接合材71來正式接合基座4的第1接合層45與蓋6的第2接 合層61、製造圖1所示的水晶振動子1。 另外，在上述基座4的製造工程中，將鈾刻晶圓8而於 基座4的基材形成貫通孔49的工程稱爲貫通孔形成工程。 並且，將利用藉由上述光蝕刻法所形成圖案的金屬層92及 電鍍層93，在基座4的基材形成電極焊墊51，52、外部端 子電極53，54及配線圖案（亦即，內部電極55、外部電極 56及貫通電極57)的工程稱爲電極形成工程。而且，將藉 由光蝕刻法來形成樹脂圖案58，以樹脂材（樹脂圖案58) 來密封貫通孔49的開口面492，493的至少一方的工程稱爲 封孔工程。 本實施形態1的水晶振動子1是在貫通孔49的內側面 49 1的全體形成有貫通電極57，因此可藉由此貫通電極57 來電性連接形成於基座4的一主面42的內部電極55與形成 於基座4的另一主面43的外部電極56，使在貫通孔49的導 通狀態安定。又，由於位在基座4的一主面42側的貫通孔 49的開口面492會藉由樹脂圖案58 (樹脂材）來密封，因 此不會有水晶振動子1的封裝內部經由貫通孔49來暴露至 外氣的情形，水晶振動子1的封裝內部的氣密性會被充分 地保持。又，由於空腔46的底面461的一半以上形成有樹 脂圖案58，因此可藉由此樹脂圖案58來補強基座4的面方 向的強度。 並且，本實施形態1的水晶振動子1是在位於基座4的 一主面42側之貫通孔49的開口面492及此開口面492的周圍 -24- 201240339 (具體而言是在空腔46的底面461的一半以上的區域）廣 泛形成樹脂圖案58，藉此可充分地確保樹脂圖案5 8與構成 基座4的基材（玻璃材）直接接觸的接觸面積。因此，可 充分地確保樹脂圖案58對構成基座4的基材的接合強度， 充分地確保水晶振動子1的封裝的氣密安定性。 <實施形態2> 實施形態2的水晶振動子1是與實施形態1的水晶振動 子1幾乎同樣的構成。因此，以下只針對與實施形態1的水 晶振動子1相異的點進行說明。 實施形態2的水晶振動子1是基座4的構成與實施形態1 的水晶振動子1不同。 圖24A〜圖24C是表示實施形態2的基座4的槪略構成 的槪略圖，圖24A是槪略平面圖，圖24B是表示沿著圖24A 的一點鏈線來切斷基座4時的切斷面的狀態槪略剖面圖， 圖24C是槪略底面圖。 實施形態2的水晶振動子1的基座4是在平面視長方形 的框體背面（另一主面43)如圖24B及圖24C所示設有4個 的城堡4 7A，47B，48A，48B。具體而言，城堡4 7A是從 沿著另一主面43的長邊方向之一側邊的一端部起設置到沿 著與此一端部鄰接的短邊方向之一側邊的一端部，城堡 47B是從沿著另一主面43的長邊方向之另一側邊的一端部 起設置到沿著與此一端部鄰接的短邊方向之一側邊的另一 端部。並且，城堡48 A是從沿著另一主面43的長邊方向之 -25- 201240339 一側邊的另一端部起設到沿著與此另一端部鄰接的短邊方 向之另一側邊的一端部，城堡48B是從沿著另一主面43的 長邊方向之另一側邊的另一端部起設到沿著與此另一端部 鄰接的短邊方向之另一側邊的另一端部。 而且，分別在該等4個的城堡4 7A，47B，48A，48B形 成有外部端子電極53A，53B，54A，54B。然後，外部端 子電極53A與電極焊墊51會藉由配線圖案來電性連接，外 部端子電極54B與電極焊墊52會藉由配線圖案來電性連接 〇 然後，如圖24A〜圖24C所示，樹脂圖案58不是形成 於構成空腔46的底面461之基座4的一主面42,而是構成框 體背面之基座4的另一主面43。具體而言，樹脂圖案58是 在基座4的另一主面43，設於和空腔46的底面對向的位置 ，藉由此樹脂圖案58來密封位於另一主面43的貫通孔49的 開口面4 9 3。 如此的實施形態2的水晶振動子1的基座4是在圖2 3 A 及圖23B所示的製造工程中，除了使樹脂圖案58不是形成 於晶圆8的一主面81，而是晶圓8的另一主面82以外，其餘 則與實施形態1的水晶振動子1的基座4同樣的方法製造。 由於本實施形態2的水晶振動子1在貫通孔49的內側面 49 1的全體形成有貫通電極57，因此可藉由此貫通電極57 來電性連接形成於基座4的一主面42的內部電極55與形成 於基座4的另一主面43的外部電極56，使在貫通孔49的內 部之導通狀態安定。又，由於位在基座4的另一主面43側 -26- 201240339 的貫通孔49的開口面493會藉由樹脂圖案58(樹脂材）來 密封，所以不會有水晶振動子1的封裝內部經由貫通孔49 來暴露於外氣的情形，水晶振動子1的封裝內部的氣密性 會被充分地保持。而且，在基座4的另一主面43，在與空 腔46的底面對向的位置形成有樹脂圖案58，因此在基座4 的面方向的強度會藉由此樹脂圖案5 8來補強。 並且，本實施形態2的水晶振動子1是在位於基座4的 另一主面43側的貫通孔49的開口面493及此開口面493的周 圍（具體而言是在與基座4的另一主面43的空穴46的底面 對向的部分的一半以上的區域）廣泛地形成樹脂圖案58, 藉此可充分地確保樹脂圖案58與構成基座4的基材（玻璃 材）直接接觸的接觸面積。因此，可充分地確保樹脂圖案 58對構成基座4的基材的接合強度，充分地確保水晶振動 子1的封裝的氣密安定性。 在本實施形態2的水晶振動子1的構成中，有關上述以 外的構成是與實施形態1的水晶振動子1相同，藉此實施形 態2的水晶振動子1可達成與實施形態1的水晶振動子1同樣 的效果。 <實施形態3> 實施形態3的水晶振動子1是與實施形態1的水晶振動 子1幾乎同樣的構成，藉此可達成與實施形態1的水晶振動 子1同樣的效果。因此，以下只針對與實施形態1的水晶振 動子1相異的點進行說明。 -27- 201240339 實施形態3的水晶振動子1是基座4的構成與實施形態1 的水晶振動子1不同。 圖25A〜圖25C是表示實施形態3的基座4的槪略構成 的槪略圖，圖25A是槪略平面圖，圖25B是表示沿著圖25A 的一點鏈線來切斷基座4時的切斷面的狀態槪略剖面圖， 圖25C是槪略底面圖。 在實施形態3的水晶振動子1的基座4中，樹脂圖案5 8 是如圖25A〜圖25C所示在位於構成空腔46的底面461之基 座4的一主面42的貫通孔49的開口面492及該開口面492的 附近、以及位於構成框體背面的基座4的另一主面43的貫 通孔49的開口面493及該開口面493的附近形成。亦即，在 本實施形態3中，貫通孔49的兩方的開口面492，493會藉 由樹脂圖案5 8來密封。 而且，在本實施形態3中，貫通孔49的內部是被充塡 有使用在樹脂圖案5 8的形成之樹脂材59。 如此的實施形態3的水晶振動子1的基座4是在圖22A 及圖22B所示的製造工程中，在晶圓8的兩主面81，82及貫 通孔49的開口面492，493上藉由浸漬塗佈法來塗佈含感光 劑的樹脂而形成樹脂層95的同時，進行往貫通孔49之樹脂 材59的充塡，在圖23A及圖23B所示的製造工程中，除了 使樹脂圖案58只在位於晶圓8的一主面81的貫通孔49的開 口面492及該開口面492的附近、以及位於晶圓8的另一主 面82的貫通孔49的開口面493及該開口面493的附近形成以 外，其餘則與實施形態1的水晶振動子1的基座4同樣的方 -28- 201240339 法製造。 由於本實施形態3的水晶振動子1在貫通孔49的內側面 491的全體形成有貫通電極57，因此可藉由此貫通電極57 來電性連接形成於基座4的一主面42的內部電極55與形成 於基座4的另一主面43的外部電極56，使在貫通孔49的內 部之導通狀態安定。又，由於貫通孔49的兩方的開口面 492，493會藉由樹脂圖案58 (樹脂材）來密封，且在貫通 孔49的內部充塡有樹脂材59，因此不會有水晶振動子1的 封裝內部經由貫通孔49來暴露於外氣的情形，可充分地保 持水晶振動子1的封裝內部的氣密性。 另外，在實施形態3中，充塡於貫通孔49的內部之樹 脂材59是使用與構成樹脂圖案58的樹脂材相同者，未含導 電性物質者，但並非限於此，例如充塡於貫通孔4 9的內部 之樹脂材59可不是與構成樹脂圖案58的樹脂材相同者，亦 可爲含導電性物質者。在貫通孔49的內部充塡含導電性物 質的樹脂材時，在貫通孔49的導通狀態更安定。 在本實施形態3的水晶振動子1的構成中’有關上述以 外的構成是與實施形態1的水晶振動子1相同’藉此實施形 態3的水晶振動子1可達成與實施形態1的水晶振動子1同樣 的效果。 <實施形態4> 實施形態4的水晶振動子1是與實施形態1的水晶振動 子1幾乎同樣的構成’藉此可達成與實施形態1的水晶振動 -29- 201240339 子1同樣的效果。因此’以下只針對與實施形態1的水晶振 動子1相異的點進行說明。 實施形態4的水晶振動子1是基座4的構成與實施形態1 的水晶振動子1不同。 圖26A〜圖26C是表示實施形態4的基座4的槪略構成 的槪略圖，圖26A是槪略平面圖，圖26B是表示沿著圖26A 的一點鏈線來切斷基座4時的切斷面的狀態槪略剖面圖， 圖26C是槪略底面圖。 在實施形態4的水晶振動子1的基座4中’在平面視長 方形的框體背面（另一主面43)是如圖26B及圖26C所示 設有4個的城堡47A，47B’ 48A，48B。具體而言’城堡 47 A是從沿著另一主面43的長邊方向之一側邊的一端部起 設置到沿著與此一端部鄰接的短邊方向之一側邊的一端部 ，城堡47B是從沿著另一主面43的長邊方向之另一側邊的 一端部起設置到沿著與此一端部鄰接的短邊方向之一側邊 的另一端部。並且，城堡48 A是從沿著另一主面43的長邊 方向之一側邊的另一端部起設到沿著與此另一端部鄰接的 短邊方向之另一側邊的一端部，城堡48B是從沿著另一主 面43的長邊方向之另一側邊的另一端部起設到沿著與此另 一端部鄰接的短邊方向之另一側邊的另一端部。 而且，分別在該等4個的城堡47A，47B，48A，48B形 成有外部端子電極53A，53B，54A，54B。然後，外部端 子電極53A與電極焊墊51會藉由配線圖案來電性連接，外 部端子鼋極54B與電極焊墊52會藉由配線圖案來電性連接 -30- 201240339 並且，形成於基座4的一主面之第1接合層45A是如圖 26A〜圖26C所示，與實施形態1同樣地在濺射膜453上層 疊有電鍍膜454而構成。但’金屬膜453及電鍍膜454的構 成與實施形態1不同。 亦即，在實施形態4的水晶振動子1的基座4的第1接合 層45A中，濺射膜453是在藉由濺射法所形成之由Ti所構成 的Ti膜上藉由濺射法來濺射形成由Cu所構成的Cu膜而成 。並且，電鍍膜454是在濺射膜453上電鍍形成由Ni所構成 的Ni膜，且在此Ni膜上電鍍形成由Au所構成的Au膜而成 〇 又，構成基座4的電極55，56，57的金屬層92是藉由 與構成上述第1接合層45A的濺射膜453同樣的材料所構成 。因此，實施形態4的水晶振動子1的基座4的製造工程是 在晶圓8的兩主面81，82藉由濺射法來濺射形成由Ti所構 成的Ti層而形成Ti層後，在Ti層上藉由濺射法來濺射形成 Cu層，藉此實施保護層91及金屬層92的形成（參照圖6A 、圖 6B、圖 14A、及圖 14B)。 又，在實施形態4中，內部電極55之中，被連接至水 晶振動片的激發電極之電極焊墊51，52部分的內部電極55 是藉由金屬層92及電鍍層93所構成，電極焊墊5 1，52以外 的內部電極55是如圖26A〜圖26C所示僅以金屬層92所構 成。又，外部電極56是包含外部端子電極53A，53B，5 4A ，54B的全部會藉由金屬層92及電鍍層93所構成。 -31 - 201240339 並且，在實施形態4中，構成電極55’ 56，57的電鍍 層93是藉由與構成上述第1接合層45A的電鍍膜454相同的 材料所構成。因此，實施形態4的水晶振動子1的基座4的 製造工程是在金屬層92上電鍍形成由Ni所構成的Ni層而形 成Ni層後，在Ni層上電鎪形成Au層’藉此實施電鍍層93 的形成（參照圖16A及圖16B)。 而且，在實施形態4中，樹脂圖案58是如圖26A〜圖 26C所示形成於基座4的兩主面42，43。具體而言，在空腔 46的底面461及框體背面之與空腔46的底面461對向的部分 形成有樹脂圖案58。藉此，貫通孔49的兩方的開口面492 ’ 493會被樹脂材密封的同時，內部電極55的電極焊墊51 ，5 2以外的部分，亦即僅以電鍍層93構成的部分的內部電 極55的表面會被樹脂所被覆。加上外部電極56的一部分的 表面會被樹脂所被覆。因此，實施形態4的水晶振動子1的 基座4的製造工程是將樹脂圖案58形成於晶圓8的兩主面82 ，83 ° 上述以外，本實施形態4的水晶振動子1的基座4是與 實施形態1的水晶振動子1的基座4同樣的製造工程製造。 本實施形態4的水晶振動子1是與實施形態1的水晶振 動子1同樣，在貫通孔49的內側面491的全體形成有貫通電 極57，因此可藉由此貫通電極57來電性連接形成於基座4 的一主面42的內部電極55與形成於基座4的另一主面43的 外部電極56，使在貫通孔49的內部之導通狀態安定。又， 由於貫通孔49的兩方的開口面492，493會藉由樹脂圖案58 -32- 201240339 (樹脂材）所密封，因此不會有水晶振動子1的封裝內部 經由貫通孔49來暴露至外氣的情形，水晶振動子1的封裝 內部的氣密性會被充分地保持。又，由於在基座4的兩主 面42，43，具體而言是空腔46的底面46 1、及框體背面之 與空腔46的底面461對向的部分形成有樹脂圖案58，所以 可藉由此樹脂圖案5 8來補強基座4的面方向的強度。 並且，本實施形態4的水晶振動子1是在位於基座4的 兩主面42，43側之貫通孔49的開口面492，493及該開口面 493的周圍（具體而言是在空腔46的底面461的一半以上的 區域、及另一主面43之與空腔46的底面對向的部分的一半 以上的區域）廣泛形成樹脂圖案58，藉此可充分地確保樹 脂圖案58與構成基座4的基材（玻璃材）直接接觸的接觸 面積。因此，可充分地確保樹脂圖案58對構成基座4的基 材的接合強度，充分地確保水晶振動子1的封裝的氣密安 定性》 而且，在實施形態4的水晶振動子1中，電極焊墊5 1， 52以外的內部電極55是藉由樹脂圖案5$來被覆表面’因此 不會有電極焊墊51，52以外的內部電極55的電極表面（Cu 層）氧化的情形。並且，在實施形態4的水晶振動子1中’ 電極焊墊51，52以外的內部電極55，具體而言是以樹脂圖 案58所被覆的部分的內部電極55不使用Au ’所以相較於 實施形態1 ’電極的形成所必要的Au的使用量少’製造成 本會被壓低。 並且，在實施形態4的水晶振動子1中，形成於蓋（未 -33- 201240339 圖示）的下面之第2接合層是從蓋側依序層疊由Ti所構成 的Ti膜、由Cu所構成的Cu膜、由Ni所構成的Ni膜，而構 成。Ti膜是藉由濺射法來濺射形成，且在此Ti膜上藉由濺 射法來濺射形成Cu膜。而且，Ni膜是在Cu膜上藉由電鍍 處理來形成》 而且，在蓋的第2接合層上，在與基座4的接合前，層 疊接合材。接合材是由被層疊於第2接合層上的Au/Sn膜及 層疊於Au/Sn膜上而形成的Au膜所構成。在此，Au/Sn膜 是由層疊於第2接合層上而被電鍍形成的Au膜及被電鍍形 成於此Au膜上的Sn膜所構成。並且，Au膜是由層疊於 Au/Sn膜上而被電鍍形成的Au打底電鍍膜及層疊於Au打底 電鍍膜上而被電鍍形成的Au電鍍膜所構成。在如此的接 合材中，Au/Sn膜是藉由加熱來溶融，而成爲AuSn合金膜 。另外，接合材亦可爲藉由在蓋的第2接合層上電鍍AuSn 合金來形成者》 在本實施形態4的水晶振動子1的構成中，有關上述以. 外的構成是與實施形態1的水晶振動子1相同，藉此實施形 態4的水晶振動子1可達成與實施形態1的水晶振動子1同樣 的效果。 另外，在實施形態4的水晶振動子1的基座4中，外部 電極56之中，表面藉由樹脂圖案58所被覆的部分的外部電 極56亦可只使用以Ti層及Cu層所構成的金屬層92來構成。 若根據此構成，可更減少電極的形成所必要的Au的使用 量，更壓低成本。 -34- 201240339 並且，在實施形態4的水晶振動子1中，構成第1接合 層45的金屬膜之Ti膜、構成金屬層92及保護層91的底層之 Ti層、及構成第2接合層的底層之Ti膜亦可改換成構成晶 圓8的材料（例如玻璃材料）與構成Cu層的Cu之接合性良 好的金屬層（金屬膜），例如由W、Cr、或Mo所構成的接 觸金屬層（接觸金屬膜）。 <實施形態5> 圖27是公開實施形態5的水晶振盪器的內部空間的槪 略側面圖。並且，圖28A及圖28B是表示實施形態5的水晶 振盪器的基座的槪略構成圖，圖28A是槪略平面圖，圖 28B是槪略底面圖。 如圖27所示，在實施形態5的水晶振盪器10設有·· 1C 晶片20 (在本發明所謂的電子零件元件）、及由AT-CUT 水晶所構成的水晶振動片2 (在本發明所謂的電子零件元 件）、及用以保持1C晶片20與水晶振動片2，氣密密封水 晶振動片2的基座4 (在本發明所謂的第1密封構件的電子 零件封裝用密封構件）、及配置成與基座4對向，用以氣 密密封保持於基座4的水晶振動片2的激發電極31，32 (在 本發明所謂的電子零件元件的電極）的蓋6 (在本發明所 謂的第2密封構件）。 此水晶振盪器1 0是與實施形態1的水晶振動子1同樣， 由基座4及蓋6來構成封裝（在本發明所謂的電子零件封裝 )’基座4與蓋6是藉由由Au及Sn的合金所構成的接合材 -35- 201240339 71來接合，形成被氣密密封的內部空間11。在此內部空間 1 1中，水晶振動片2是藉由使用金凸塊等的導電性凸塊906 之FCB法來電氣機械性超音波接合於基座4。然後，在內 部空間1 1的基座4上，如圖27所示，1C晶片20會藉由使用 金凸塊等的導電性凸塊907之FCB法來超音波接合且被電 性連接。 其次，說明有關此水晶振盪器10的各構成。但，有關 蓋6及水晶振動片2的構成是與實施形態1的水晶振動子1的 蓋6及水晶振動片2的構成相同，因此省略說明。 1C晶片20是在內部空間11的基座4上藉由使用金凸塊 等導電性凸塊907的FCB法來超音波接合且被電性連接。 更具體而言，1C晶片20是具備6個的端子電極（未圖示） ，該等6個的端子電極之中2個的端子電極是經由後述的電 極焊墊51、52及第1配線圖案501來電性連接至水晶振動片 2的激發電極31，32，剩下的4個端子電極是經由基座4之 後述的第2配線圖案502或第3配線圖案503來電性連接至被 設於基座4的框體背面的外部端子電極53A，53B，54A， 54B。 水晶振盪器1〇的基座4是與實施形態1的基座4同樣， 由玻璃材料所構成，如圖27所示，形成由底部41及沿著基 座4的一主面42的外周來從底部41延伸至上方的壁部44所 構成的箱狀體。基座4是藉由光蝕刻法來蝕刻長方體的一 片板而成形。基座4的壁部44的頂面是與蓋6的接合面，在 此接合面設有用以和蓋6接合的第1接合層45。第1接合層 -36- 201240339 45的構成是與實施形態1的基座4之第1接合層45的構成相 同，由在濺射膜上形成電鍍膜的複數層的層疊構造所構成 。亦即，濺射膜是在藉由濺射法來濺射形成之由Μ 〇所構 成的Mo膜上藉由濺射法來濺射形成由Au所構成的Au膜而 成。並且，電鍍膜是在濺射膜上電鍍形成由Au所構成的 Au膜而成。 與實施形態1的基座4同樣地，在水晶振盪器1 0的基座 4形成有藉由底部41及壁部44所包圍的空腔46，此空腔46 是如圖27、圖28A、及圖28B所示，形成平面視長方形狀 ，空腔46的壁面是形成傾斜狀。 在此空腔46的底面461是只接觸於沿著短邊方向的邊 L1的中央部而設有1個的台座部401。 並且，在基座4的平面視長方形的框體背面（另一主 面43)形成有4個的城堡4 7A’ 4 7B，48A，48B。具體而言 ，城堡47A是從沿著另一主面43的長邊方向之一側邊的一 端部起設置到沿著與此一端部鄰接的短邊方向之一側邊的 —端部，城堡47B是從沿著另一主面43的長邊方向之另一 側邊的一端部起設置到沿著與此一端部鄰接的短邊方向之 一側邊的另一端部。並且，城堡48 A是從沿著另一主面43 的長邊方向之一側邊的另一端部起設到沿著與此另一端部 鄰接的短邊方向之另一側邊的一端部，城堡48B是從沿著 另一主面43的長邊方向之另一側邊的另一端部起設到沿著 與此另一端部鄰接的短邊方向之另一側邊的另一端部。 而且，在基座4，如圖27、圖28A、及圖28B所示，貫 -37- 201240339 通基座4的基材之貫通孔49會分別被形成於空腔46的底面 461的4個角落。此貫通孔49的內側面491是對於基座4的一 主面42及另一主面43具有傾斜，形成傾斜狀。貫通孔49的 直徑是在基座4的另一主面43側的端部形成最大，在基座4 的一主面42側的端部形成最小。 並且，在基座4的基材形成有：分別與水晶振動片2的 激發電極31，32電氣機械性接合的一對的電極焊墊51，52 、及與外部零件或外部機器電性連接的外部端子電極53A ，53B，54A，54B、及使電極焊墊51，52與1C晶片20的電 極（未圖示）電性連接的第1配線圖案501、及使外部端子 電極53A，53B與1C晶片20的電極（未圖示）電性連接的 第2配線圖案502、及使外部端子電極54 A，54B與1C晶片 20的電極（未圖示）電性連接的第3配線圖案5 03。藉由該 等電極焊墊51，52、外部端子電極53A，53B，5 4A，54B 、第1配線圖案501、第2配線圖案5 02及第3配線圖案503來 構成基座4的電極55，56，57。電極焊墊51，52是形成於 台座部401的表面。而且在電極焊墊51，52上設有用以使 水晶振動片2接合的導電性凸塊906。並且，外部端子電極 53A，53B，54A * 54B 是被形成於城堡 47A，47B，48A， 48B。又，第1配線圖案501是從基座4的一主面42的電極焊 墊51，52形成到接合1C晶片20接合部。然後，第2配線圖 案502及第3配線圖案503是經由貫通孔49的內側面491，從 接合基座4的一主面42的1C晶片20之接合部形成到另一主 面43的外部端子電極53A，53B，54A，54B。 -38- 201240339 在此’電極焊墊51’ 52、外部端子電極53A，53B， 5 4A’ 5 4B、第1配線圖案501、第2配線圖案502、及第3配 線圖案503是由與第1接合層45同一材料所構成。 並且，在空腔46的底面461 (基座4的一主面42)之設 有貫通孔49的各4個角落部、及基座4的框體背面（另一主 面43)的各貫通孔49的開口面493、及該等開口面493的附 近是配有樹脂圖案58 (樹脂材）。亦即，藉由樹脂圖案58 來密封位於基座4的一主面42側的各貫通孔49的開口面492 及位於基座4的另一主面43側的各貫通孔49的開口面493的 同時，第2配線圖案5 02及第3配線圖案503的一部分的表面 會被樹脂被覆。而且，在貫通孔49的內部充塡有樹脂材。 在此，構成樹脂圖案58的樹脂材及充塡於貫通孔49內部的 樹脂材，可使用與構成實施形態1的基座4的樹脂圖案58的 樹脂材同樣的樹脂材。 又，如圖27、圖28A、及圖28B所示，第1配線圖案 501與第2配線圖案502是形成交叉，在該交叉部分，樹脂 圖案58會介於第1配線圖案501與第2配線圖案502之間。亦 即，在構成第2配線圖案5 02的一部分的內部電極55上經由 樹脂圖案58而形成有構成第1配線圖案501的一部分的電極 (在本發明所謂的其他電極）。 如此的本實施形態5的水晶振盪器1 0是在貫通孔4 9的 內側面491的全體形成有貫通電極57，因此可藉由此貫通 電極57來電性連接形成於基座4的一主面42的內部電極55 與形成於基座4的另一主面43的外部電極56，使在貫通孔 -39- 201240339 49的導通狀態安定。又，由於位在基座4的一主面42側的 各貫通孔49的開口面492與位在基座4的另一主面43側的各 貫通孔49的開口面493會藉由樹脂圖案58 (樹脂材）來密 封且在各貫通孔49的內部充塡有樹脂材，所以不會有水晶 振盪器1 〇的封裝內部經由貫通孔49來暴露至外氣的情形， 水晶振盪器10的封裝內部的氣密性會被充分地保持。而且 ，在構成第2配線圖案502的一部分的內部電極55上更經由 樹脂圖案58而形成有構成第1配線圖案501的一部分的電極 ，基座4是在基座4的厚度方向具備複數個配線圖案的構成 如此的本實施形態5的水晶振盪器10的基座4是除了在 樹脂圖案58的形成後，更具備一在樹脂圖案58上形成電極 的工程以外，其餘則藉由與實施形態1的水晶振動子1的基 座4同樣的方法來製造。 並且，在本實施形態5的水晶振盪器10的構成中’有 關上述以外的構成是與實施形態1的水晶振動子1相同’藉 此實施形態5的水晶振盪器1 〇可達成與實施形態1的水晶振 動子1同樣的效果。 <實施形態6> 實施形態6的水晶振動子1是與實施形態1的水晶振動 子1幾乎同樣的構成。因此，以下只針對與實施形態1的水 晶振動子1相異的點進行說明》 實施形態6的水晶振動子1是基座4的構成與實施形態1 -40- 201240339 的水晶振動子1不同。 圖29A〜圖29C是表示實施形態6的基座4的槪略構成 的槪略圖，圖29A是槪略平面圖’圖29 B是表示沿著圖29A 的一點鏈線來切斷基座4時的切斷面的狀態的槪略剖面圖 ，圖29C是槪略底面圖。 如圖29A〜圖29C所示，樹脂圖案58不是形成於構成 空腔46的底面461之基座4的一主面42，而是形成於構成框 體背面的基座4的另一主面43»具體而言，樹脂圖案58是 如圖29A〜圖29C所示，在位於構成框體背面的基座4的另 一主面43之貫通孔49的開口面493及該開口面493的附近、 及另一主面43之除了形成有外部電極56 (外部端子電極53 ，54 )的區域的全區域形成。亦即，本實施形態6是貫通 孔49的開口面4 93會藉由樹脂圖案58來密封，且另一主面 43的全體會被樹脂圖案58或外部電極56所被覆。並且，在 本實施形態6中，形成於基座4的2個貫通孔49與形成於上 述實施形態1的基座4的2個貫通孔49 (參照圖2A〜圖2C) 作比較，是接近設置。 而且’在本實施形態6中，貫通孔49的內部是被充塡 有使用在樹脂圖案58的形成之樹脂材59。 又’外部電極56是在與第1接合層45的濺射膜451及電 鍍膜452同一材料構成的濺射膜561及電鍍膜562上更層疊 第2電鍍膜5 63的構成。亦即，外部電極56的濺射膜561是 在藉由濺射法來濺射形成之由Mo所構成的Mo膜上藉由濺 射法來濺射形成由Au所構成的Au膜而成。又，電鍍膜562 -41 - 201240339 是在濺射膜561上電鍍形成由Au所構成的Au膜而成。又， 第2電鍍膜563是在電鍍膜562上更電鍍形成金屬膜而成。 構成此第2電鍍膜563的金屬膜的具體例，可舉由被電鍍形 成於電鍍膜5 62上的Au膜、被電鍍形成於電鍍膜5 62上之 由AuCu合金所構成的AuCu合金膜、或在被電鍍形成於電 鍍膜562上的Ni膜上電鍍形成Au膜而成的Ni/Au膜等。 如此的實施形態6的水晶振動子1的基座4是在圖22A 及圖22B所示的製造工程中，在晶圓8的兩主面81，82及貫 通孔49的開口面492，493上藉由浸漬塗佈法來塗佈含感光 劑的樹脂而形成樹脂層95的同時，進行往貫通孔49之樹脂 材59的充塡，在圖23A及圖23B所示的製造工程中，將樹 脂圖案58形成在位於晶圓8的另一主面82之貫通孔49的開 口面493及該開口面493的附近、及另一主面43之除了形成 有外部電極56 (外部端子電極53，54)的區域以外的全區 域，更在構成外部電極56的電鍍膜5 62的金屬層93 (參照 圖23B)上電鍍形成構成上述外部電極56的第2電鍍膜563 的第2金屬層，除此以外與實施形態1的水晶振動子1的基 座4同樣的方法製造。 本實施形態6的水晶振動子1是在貫通孔4 9的內側面 491的全體形成有貫通電極57，因此可藉由此貫通電極57 來電性連接形成於基座4的一主面42的內部電極55與形成 於基座4的另一主面43的外部電極56，使在貫通孔49的內 部之導通狀態安定。又，由於貫通孔49的一方的開口面 49 3會藉由樹脂圖案58 (樹脂材）來密封的同時，在貫通 -42- 201240339 孔49的內部充塡有樹脂材59，因此不會有水晶振動子1的 封裝內部經由貫通孔49來暴露至外氣的情形’水晶振動子 1的封裝內部的氣密性會被充分地保持。 並且，本實施形態6的基座4是從位於構成框體背面的 基座4的另一主面43之貫通孔49的開口面493及該開口面 493的附近到另一主面43之除了形成有外部電極56 (外部 端子電極53，54)的區域以外的全區域形成樹脂圖案58’ 藉此可充分地確保樹脂圖案58與構成基座4的基材（玻璃 材）直接接觸的接觸面積。因此，可充分地確保樹脂圖案 58對構成基座4的基材的接合強度，充分地確保水晶振動 子1的封裝的氣密安定性。 而且，在本實施形態6的基座4是藉由樹脂圖案58來被 覆沿著另一主面43的外周緣的端部全體。亦即，以和實施 形態1同樣的方法來製造本實施形態6的基座4時，在切割 晶圓8而使基座4小片化時的晶圓8的切斷部形成樹脂圖案 5 8，而以樹脂材來被覆晶圓8的切斷部。藉此，在本實施 形態6的基座4的製造中是藉由被覆晶圓8的切斷部之樹脂 材來抑制切割所造成的晶圓（玻璃材）的切屑發生。 另外，在實施形態6中，充塡於貫通孔49的內部之樹 脂材59是使用與構成樹脂圖案58的樹脂材相同者，爲不含 導電性物質者’但並非限於此’例如充塡於貫通孔49的內 部之樹脂材59亦可不與構成樹脂圖案58的樹脂材相同者， 爲含導電性物質者。在貫通孔49的內部充塡含導電性物質 的樹脂材時’貫通孔49的導通狀態更安定。 -43- 201240339 在本實施形態6的水晶振動子1的構成中’有關上述以 外的構成是與實施形態1的水晶振動子1相同’藉此實施形 態6的水晶振動子1可達成與實施形態1的水晶振動子1同樣 的效果。 又，上述實施形態1〜6的基座4中，樹脂圖案58是藉 由使用具有感光性的樹脂材之光蝕刻法所形成，但此爲合 適的例子，並非限於此。例如，樹脂圖案5 8亦可藉由在形 成樹脂圖案58的位置塗佈樹脂材來形成者。亦即，在上述 實施形態1〜6的基座4的製造中，樹脂圖案58的形成方法 是採用在晶圓8的兩主面81，82上藉由浸漬塗佈法或噴塗 法來塗佈具有感光性的樹脂材而形成樹脂層95之後（參照 圖22A及圖22B )對樹脂層95進行曝光及顯像而形成樹脂 圖案58(參照圖23A及圖23B)的方法，但亦可採用其他 的方法。例如，可採用在晶圆8的兩主面81，82上的樹脂 圖案58的形成位置藉由噴墨法、網版印刷法、或分配器法 來吐出樹脂而形成樹脂圖案58的方法，作爲樹脂圖案58的 形成方法。如此不藉光蝕刻法所形成的樹脂圖案58亦可爲 藉由不具備感光性的樹脂材所構成者。並且，藉由噴墨法 、網版印刷法、或分配器法，可在貫通孔49充塡含導電性 物質的樹脂。 另外’在上述實施形態1〜6的基座4中，樹脂材可介 於內部電極55、外部電極56、及貫通電極57各與基座4的 基材（兩主面42’ 43及貫通孔49的內側面491)之間。亦 即’可在圖14A及圖14B所示的製造工程形成金屬層92之 -44- 201240339 前’將樹脂材塗佈於形成晶圓8的兩主面81，82及貫通孔 49的內側面491的電極焊墊51，52、外部端子電極53，54 、及配線圖案（亦即內部電極55、外部電極56、及貫通電 極57)的部分，在塗佈的樹脂材上形成金屬層92。若根據 此’則因爲樹脂材介於內部電極55、外部電極56、及貫通 電極57各與基座4的基材之間，所以不會有基座4的基材（ 例如由玻璃材料所構成的基材）與構成各電極55，56，57 的金屬反應而基座4的基材劣化的情形。 又，有關上述實施形態1〜5的基座4的製造，形成樹 脂圖案58的工程（參照圖23A及圖23B )亦可在個別分割 基座4時所被切斷的部分的晶圓8的表面形成樹脂圖案58。 如此先在晶圓8的切斷部形成樹脂圖案58，可防止因切斷 晶圓8時所加諸的外力，造成基座4的側面或外部端子電極 53，54破損。 並且，在實施形態5的基座4中，亦可在上述實施形態 1〜4及6的基座4的內部電極55及外部電極56的其中至少一 方上經由樹脂圖案（樹脂材）來形成其他的電極，而使能 夠在構成第2配線圖案5 02的一部分的內部電極55上經由樹 脂圖案5 8來形成構成第1配線圖案5 0 1的一部分的電極。若 根據此，則可在基座4的厚度方向具備複數的配線圖案。 又，實施形態1〜6是使用玻璃作爲基座4及蓋6的材料 ，但基座4及蓋6並非限於使用玻璃來構成者，例如亦可爲 使用水晶來構成者。 又，實施形態1〜6主要是使用AuSn作爲接合材71， -45- 201240339 但接合材71並無特別加以限定，只要是能使基座4與蓋6接 合者即可，例如亦可爲使用CuSn等的S η合金銅焊材來構 成者。 另外，在上述的實施形態1〜4、及6的水晶振動子1、 以及實施形態5的水晶振盪器10中是使用AT-CUT水晶振動 片2作爲水晶振動片，但亦可使用音叉型的水晶振動片。 以上是顯示將本發明的電子零件封裝適用於水晶振動 子或水晶振盪器時的實施形態，但此爲較佳的實施形態， 本發明的電子零件封裝只要是藉由對向配置的密封構件來 密封電子零件元件的電極者，不管何者皆可。因此，本發 明的電子零件封裝亦可爲藉由對向配置的密封構件來氣密 密封藉由水晶以外的壓電材料例如鉬酸鋰或鈮酸鋰等所構 成的壓電振動片的激發電極之壓電振動裝置的封裝。 本發明是只要不脫離其精神或主要的特徵，亦可以其 他各種的形式來實施。因此，上述的實施例所有的點只不 過是舉例說明，不非限於此。本發明的範圍是依申請專利 範圍來表示者，在說明書本文毫無拘束。屬於申請專利範 圍的均等範圍的變形或變更全部是本發明的範圍內。 又，此申請案是根據2010年3月4日在日本申請的特願 20 1 0-4 8099請求優先權。其全部的內容爲編入本申請案者 [產業上的利用可能性] 本發明可適用於氣密密封壓電振動片等的電子零件元 -46- 201240339 件的電極之電子零件的封裝。 【圖式簡單說明】 圖1是公開實施形態1的水晶振動子的內部空間的槪略 剖面圖，沿著圖2A所示的基座的一點鏈線來切斷全體時 的水晶振動子的槪略剖面圖。 圖2 A是實施形態1的基座的槪略平面圖。 圖2B是實施形態1的基座的槪略剖面圖，沿著圖2A的 一點鏈線來切斷基座時的槪略剖面圖。 圖2C是實施形態1的基座的槪略底面圖。 圖3 A是實施形態1的蓋的槪略剖面圖。 圖3 B是實施形態1的蓋的槪略底面圖。 圖4是實施形態1的水晶振動片的槪略底面圖。 圖5A是表示實施形態1的基座的製造工程之一工程的 晶圓的一部分槪略平面圖》 圖5B是沿著圖5A的一點鏈線來切斷圖5A所示的晶圓 時的槪略剖面圖。 圖6A是表示實施形態1的基座的製造工程之一工程的 晶圓的一部分槪略平面圖。 圖6B是沿著圖6A的一點鏈線來切斷圖6A所示的晶圓 時的槪略剖面圖。 圖7 A是表示實施形態1的基座的製造工程之一工程的 晶圓的一部分槪略平面圖。 圖7B是沿著圖7A的一點鏈線來切斷圖7A所示的晶圓 -47- 201240339 時的槪略剖面圖。 圖8A是表示實施形態1的基座的製造工程之一工程的 晶圓的一部分槪略平面圖。 圖8B是沿著圖8A的一點鏈線來切斷圖8A所示的晶圓 時的槪略剖面圖。 圖9 A是表示實施形態1的基座的製造工程之一工程的 晶圓的一部分槪略平面圖。 圖9B是沿著圖9A的一點鏈線來切斷圖9A所示的晶圓 時的槪略剖面圖。 圖10A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖10B是沿著圖10A的一點鏈線來切斷圖10 A所示的晶 圓時的槪略剖面圖。 圖11 A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖11B是沿著圖11A的一點鏈線來切斷圖11A所示的晶 圓時的槪略剖面圖。 圖12A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖12B是沿著圖12A的一點鏈線來切斷圖12 A所示的晶 圓時的槪略剖面圖。 圖13 A是表示實施形態1的基座的製造工程之一工程 的晶圆的一部分槪略平面圖。 圖13B是沿著圖13A的一點鏈線來切斷圖13A所示的晶 -48- 201240339 圓時的槪略剖面圖。 圖14A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖14B是沿著圖14A的一點鏈線來切斷圖14A所示的晶 圓時的槪略剖面圖。 圖15A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖15B是沿著圖15A的一點鏈線來切斷圖15A所示的晶 圓時的槪略剖面圖。 圖16A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖16B是沿著圖16A的一點鏈線來切斷圖16A所示的晶 圓時的槪略剖面圖。 圖17A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖17B是沿著圖17A的一點鏈線來切斷圖17A所示的晶 圓時的槪略剖面圖。 圖18A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖18B是沿著圖18A的一點鏈線來切斷圖18 A所示的晶 圓時的槪略剖面圖。 圖1 9 A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖19B是沿著圖19A的一點鏈線來切斷圖19A所示的晶 -49- 201240339 圓時的槪略剖面圖。 圖20 A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖20B是沿著圖20A的一點鏈線來切斷圖20A所示的晶 圓時的槪略剖面圖。 圖21Α是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖21Β是沿著圖21Α的一點鏈線來切斷圖21Α所示的晶 圓時的槪略剖面圖。 圖22 Α是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖22B是沿著圖22A的一點鏈線來切斷圖22A所示的晶 圓時的槪略剖面圖。 圖23A是表示實施形態1的基座的製造工程之一工程 的晶圓的一部分槪略平面圖。 圖23B是沿著圖23 A的一點鏈線來切斷圖23 A所示的晶 圓時的槪略剖面圖。 圖24A是實施形態2的基座的槪略平面圖》 圖24B是實施形態2的基座的槪略剖面圖，沿著圖24A 的一點鏈線來切斷基座時的槪略剖面圖。 圖24C是實施形態2的基座的槪略底面圖。 圖25A是實施形態3的基座的槪略平面圖》 圖25B是實施形態3的基座的槪略剖面圖，沿著圖25A 的一點鏈線來切斷基座時的槪略剖面圖。 -50- 201240339 圖25C是實施形態3的基座的槪略底面圖。 圖26A是實施形態4的基座的槪略平面圖》 圖26B是實施形態4的基座的槪略剖面圖，沿著圖26A 的一點鏈線來切斷基座時的槪略剖面圖。 圖26C是實施形態4的基座的槪略底面圖。 圖2 7是公開實施形態5的水晶振盪器的內部空間的槪 略側面圖。 圖28A是實施形態5的基座的槪略平面圖。 圖28B是實施形態5的基座的槪略底面圖。 圖29A是實施形態6的基座的槪略平面圖》 圖29B是實施形態6的基座的槪略剖面圖，沿著圖29A 的一點鏈線來切斷基座時的槪略剖面圖。 圖29C是實施形態6的基座的槪略底面圖。 【主要元件符號說明】 1 :水晶振動子 11 :內部空間 2 :水晶振動片 21 :基板 22，23 :主面 24:短邊的中央部分 26 :振動部 27 :接合部 31 ’ 32 :激發電極 -51 - 201240339 33，34 :端子電極 35，36:拉出電極 4 :基座（第1密封構件的電子零件封裝用密封構件） 41 :底部 41 1，412 :台座部 42 :主面（對向面） 43 :主面 44 :壁部 45，45A :第1接合層 451 ， 453 :濺射膜 452 ， 454 :電鍍膜 46 :空腔 461 :底面 47，48 :城堡 47A， 47B > 48A > 48B ：城堡 4 9 :貫通孔 4 9 1 :內側面 492， 493:開口面 5 1，5 2 :電極焊墊 53，54 :外部端子電極 53A > 53B，54A - 54B ：外部端子電極 5 5 :內部電極 5 6 :外部電極 5 6 1 :濺射膜 -52- 201240339 562 :電鍍膜 563 :第2電鍍膜 57 :貫通電極 5 8 :樹脂圖案 59 :樹脂材 6 :蓋（第2密封構件） 61 :第2接合層 6 1 1 : Mo膜 612 ： Au膜 71 :接合材 7 11： An/Sn膜 712 : Au膜 8 :晶圓 8 1，82 :主面 91 :保護層 92 :金屬層 93 :電鍍層 94 :正光阻層 9 5 :樹脂層 1 〇 :水晶振盪器（電子零件封裝） 2 0 : IC晶片（電子零件元件） 401 :台座部 5 0 1 :第1配線圖案 5 0 2 :第2配線圖案 -53- 201240339 5 03 :第3配線圖案 906，907:導電性凸塊 L1 :沿著短邊方向的邊 L2，L3 :沿著長邊方向的邊 -54-[Technical Field] The present invention relates to a first sealing member used in an electronic component package in which an electrode of an electronic component element is sealed by a first sealing member and a second sealing member that are opposed to each other. A sealing member for electronic component packaging, an electronic component package using the sealing member for electronic component packaging, and a method of manufacturing the sealing member for electronic component packaging. [Prior Art] The internal space of the electronic component package is hermetically sealed in order to prevent deterioration of the electrode characteristics of the electronic component mounted on the internal space. Such an internal space is sealed by a hermetically sealed electronic component, and for example, a piezoelectric vibration device such as a crystal resonator can be used. Such an electronic component package is composed of two sealing members such as a susceptor and a cover, and the casing is a package that constitutes a rectangular parallelepiped. In the internal space of such a package, electronic component components such as piezoelectric vibrating pieces are held in contact with the susceptor. Then, the electrode of the electronic component of the inner space of the package is hermetically sealed by the base and the cover (for example, refer to Patent Document 1). The susceptor of the crystal resonator package (that is, the electronic component package) as shown in Patent Document 1 is provided with a through hole penetrating the base material of the susceptor. Then, the electrodes provided on the both main faces of the susceptor are electrically connected to each other via the through hole. The through hole provided in the pedestal is filled with a conductive member, and the conductive-5-201240339 member is connected to the electrodes provided on the two main faces of the pedestal, whereby the electrodes provided on the two main faces are electrically connected to each other. And maintain the airtightness of the inner space of the package. Here, in the conductive member, Patent Document 1 discloses a silver paste and a metal member fitted to the through hole. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2002-124845 SUMMARY OF INVENTION (Problems to be Solved by the Invention) In recent years, electronic component packages such as piezoelectric vibration devices have been required to be small. In addition, the through-holes of the sealing member provided in the above-described susceptor or the like tend to be miniaturized. However, the conductive paste such as the silver paste disclosed in Patent Document 1 generally has high viscosity, so that it is difficult to fill a minute through hole. Further, when the metal member as the conductive member is filled in the minute through hole, it is difficult to manufacture a minute metal member that is in close contact with the minute through hole. Therefore, when the conductive paste or the metal member is filled into the minute through holes, the charging failure may occur. Moreover, because of such poor filling, the through holes are not completely sealed, so that the airtightness of the inner space of the package is impaired. In view of the above-described circumstances, the present invention provides a sealing member for electronic component packaging which can be provided with a sufficient airtightness in the interior of the electronic component package 201240339, which is used as a sealing member for electronic component packaging. for purpose. Further, another object of the present invention is to provide an electronic component package in which the hermeticity of the inside of the package is sufficiently maintained. Further, an object of the present invention is to provide a method of manufacturing a sealing member for an electronic component package which can be used as a sealing member for electronic component sealing, and which is provided with a sufficient airtightness inside the electronic component package. (Means for Solving the Problem) In order to achieve the above-described object, the sealing member for electronic component packaging of the present invention is an electrode that hermetically seals an electronic component element by a first sealing member and a second sealing member that are disposed to face each other. The first sealing member of the electronic component package is characterized in that: the through hole is formed through a substrate » internal electrode of the sealing member for electronic component packaging, and is formed on the substrate and the second a facing surface of the sealing member; an external electrode formed on a surface facing the opposite direction of the substrate; and a through electrode formed on the electrode electrically connected to the external electrode and the external electrode At least one of the opening faces of the through holes is sealed by a resin material on the inner side surface of the through hole. According to this configuration, the internal electrode and the external electrode are electrically connected to each other through the through electrode formed along the inner surface of the through hole, and the conduction state of the through hole of the 201240339 is stabilized. Further, since at least one of the opening faces of the through hole is sealed by the resin material, the inside of the electronic component package using the electronic component sealing member can be sufficiently airtight. In addition, the electrode (internal electrode, external electrode, and through electrode) of the substrate of the sealing member for electronic component packaging of the present invention is formed in addition to the surface of the substrate in addition to the electrode formed directly on the surface of the substrate. The commemoration of the electrode is formed between certain substances. Further, in the sealing member for electronic component packaging of the present invention, the resin material is photosensitive, and at least one of the opening faces of the through hole can be sealed by a resin pattern of the resin material disposed on the opening surface. According to this configuration, at least one of the opening faces of the through holes can be reliably sealed by a resin pattern composed of a photosensitive resin material disposed on the opening face. Such a resin pattern is easily and accurately formed by, for example, photolithography using a photosensitive resin material, and the inside of the electronic component package in which the electronic component sealing member is provided is sufficiently airtight. Further, in the sealing member for electronic component packaging of the present invention, a resin material may be filled in the inside of the through hole. According to this configuration, since the through hole can be reliably sealed by the resin material filled in the through hole, the inside of the electronic component package using the electronic component sealing member can be surely provided with sufficient gas. Confidentiality. Further, in the sealing member for electronic component packaging of the present invention, at least a part of the surface of the internal -8-201240339 electrode may be covered with a resin material. According to this configuration, since at least a part of the surface of the internal electrode is covered with the resin material, when the electrode surface of the internal electrode of the portion covered with the resin material is made of a metal which is easily oxidized by Cu or the like, the electrode surface can be prevented. Oxidation. Further, in the sealing member for electronic component packaging of the present invention, at least a part of the surface of the external electrode may be covered with a resin material. According to this configuration, since the surface of at least a part of the external electrode is covered with the resin material, when the electrode surface of the external electrode of the portion covered with the resin material is made of a metal which is easily oxidized by Cu or the like, the electrode surface can be prevented. Oxidation. Further, in the sealing member for electronic component packaging of the present invention, the resin material may be interposed between the base material and each of the internal electrode, the external electrode, and the through electrode. According to this configuration, since the resin material is interposed between the base material of the sealing member for electronic component encapsulation, the internal electrode, the external electrode, and the through electrode, the internal electrode and the external electrode are not separately formed. When the metal of the through electrode reacts with the substrate of the sealing member for electronic component packaging, the base of the sealing member for the electronic component package is not caused to react with the metal constituting the internal electrode, the external electrode, and the through electrode, respectively. The condition of material degradation. Further, in the sealing member for an electronic component package of the present invention, at least one of the internal electrode and the external electrode may be formed of another electrode via a resin material. -9-201240339 According to this configuration, a plurality of wiring patterns can be provided in the thickness direction of the sealing member for electronic component packaging. Further, in the electronic component package of the present invention, the electrode of the electronic component element is hermetically sealed by the first sealing member and the second sealing member disposed opposite to each other, wherein the first sealing member is the electron of the present invention described above. Sealing member for part packaging. According to this configuration, the sealing member for electronic component sealing of the present invention is used as the first sealing member. Therefore, the sealing member for electronic component sealing can sufficiently maintain the airtightness of the inside of the package. Further, a stable conduction state can be ensured in the through hole provided in the sealing member for electronic component packaging. Moreover, the method for producing a sealing member for an electronic component package according to the present invention is a method for producing a sealing member for electronic component packaging, the first sealing member and the first sealing member disposed opposite each other In the first sealing member of the electronic component package in which the sealing member is used to hermetically seal the electrode of the electronic component, the through-hole forming process is provided to form a through-substrate that penetrates the sealing member for the electronic component package. The electrode formation process is performed on the substrate, an internal electrode located on a surface facing the second sealing member, an external electrode located on a surface facing the opposite direction, and a through hole The through-electrode on the inner side surface and the plugging process are formed by sealing at least one opening surface of the through-holes of the -10-201240339 side with a resin material. According to this manufacturing method, since the through electrode is formed along the inner surface of the through hole in the electrode formation process, the internal electrode and the external electrode can be electrically connected by the through electrode, and a through hole can be manufactured. The conduction state is a stable sealing member for electronic component packaging. In addition, since the sealing surface of the opening surface of at least one of the solid through holes is sealed by the resin material, when the first sealing member is used as the electronic component package, the inside of the electronic component package can be sufficiently provided. A hermetic sealing member for electronic component packaging. Further, in the method of manufacturing a sealing member for an electronic component package according to the present invention, the plugging process may include forming an opening surface for sealing at least one of the through holes by photolithography using the photosensitive resin material. The engineering of the resin pattern. According to this manufacturing method, the resin pattern can be easily and accurately formed by photolithography using a photosensitive resin material, and as a result, at least one opening surface of the through hole can be reliably sealed by the resin pattern. . [Effects of the Invention] According to the sealing member for electronic component packaging of the present invention, it is possible to provide an electronic component package in which the inside of the electronic component package can be sufficiently airtight in use as a sealing member for electronic component packaging. Use a sealing member. Moreover, according to the electronic component package of the present invention, it is possible to provide an electronic component package in which the airtightness inside the package is sufficiently ensured. -11 - 201240339 Further, according to the method for manufacturing a sealing member for electronic component packaging according to the present invention, it can be manufactured as a sealing member for electronic component packaging, and the inside of the electronic component package can be sufficiently airtight. A sealing member for electronic component packaging. [Embodiment] Hereinafter, Embodiments 1 to 6 of the present invention will be described with reference to the drawings. In addition, in the first to fourth and sixth embodiments, the electronic component package of the present invention is applied to a crystal resonator of a piezoelectric vibrating device, and the AT-CUT crystal vibrating piece of the piezoelectric vibrating piece is used. When electronic component parts. Further, in the fifth embodiment, the electronic component package of the present invention is applied to a crystal oscillator package of a piezoelectric vibration device, and an AT-CUT crystal resonator piece and a 1C wafer of a piezoelectric vibrating piece are used as an electronic component. <Embodiment 1> Fig. 1 is a schematic cross-sectional view showing an internal space of a crystal resonator according to a first embodiment. 2A to 2C are schematic views showing a schematic configuration of a susceptor according to the first embodiment, wherein Fig. 2A is a schematic plan view, and Fig. 2B is a view showing a state in which the susceptor is cut along the one-dot chain line of Fig. 2A. A schematic cross-sectional view of the state of the cut surface, and Fig. 2C is a schematic bottom view. 3A and 3B are schematic views showing a schematic configuration of a cap according to the first embodiment, Fig. 3A is a schematic cross-sectional view, and Fig. 3B is a schematic bottom view. Fig. 4 is a schematic bottom plan view of the crystal resonator element of the first embodiment. In the crystal vibrator 1 of the first embodiment, as shown in Fig. 1, it is provided that: -12-201240339 pieces of zero-vibrator crystals s K are only known as seals, dense and dense, and in the case of C, 2 pieces, 2 less The oscillating crystal of the oscillating crystal crystal is formed by the susceptor 4 (the sealing member for electronic component encapsulation referred to as the first sealing member of the present invention) a cover 6 disposed in opposition to the susceptor 4 for hermetically sealing the excitation electrodes 31, 32 (referred to as electrodes of the electronic component elements in the present invention) of the crystal resonator plate 2 held by the susceptor 4 (referred to as the present invention) 2 sealing member) ° The crystal vibrator 1 is a package composed of a susceptor 4 and a cover 6 (referred to as an electronic component package in the present invention), and the susceptor 4 and the cover 6 are formed of an alloy of Au and Sn. The bonding material 71 is joined to form an inner space 11 that is hermetically sealed. In the internal space 1, the crystal resonator piece 2 is electrically and ultrasonically bonded to the susceptor 4 by an FCB method (Flip Chip Bonding) using a conductive bump (not shown) such as a gold bump. Further, the base 4 and the crystal resonator piece 2 may be joined by a conductive resin bonding material. Next, each configuration of the crystal vibrator 1 will be described. The susceptor 4 is made of a glass material such as barium borate glass. As shown in FIGS. 1 and 2A to 2C, the susceptor 4 is formed by the bottom portion 41 and the outer periphery of a main surface 42 of the susceptor 4 to extend from the bottom portion 41. A box-shaped body formed by the upper wall portion 44. The susceptor 4 is formed by a sheet of a rectangular body that is hungry by photolithography. The top surface of the wall portion 44 of the base 4 is a joint surface with the cover 6, and the first joint layer 45 for engaging the lid 6 is provided on the joint surface. As shown in Fig. 2B, the first bonding layer 45 is composed of a laminated structure of a plurality of layers in which a plating film 452 is formed on the sputter film 451. The sputter film 45 1 is an Au film formed by sputtering a sputtering method on a Mo film formed by sputtering by a sputtering method of Mo-13-201240339. Further, the plating film 452 is an Au film formed by plating Au on the sputtering film 451. The cavity 4 is formed with a cavity 46 surrounded by the bottom portion 41 and the wall portion 44. As shown in Fig. 1, the cavity 46 is formed in a plan view rectangular shape, and the wall surface of the cavity 46 is formed in an inclined shape. Further, in the first embodiment, the cavity 46 is formed in a plan view rectangle. Further, in the bottom surface 461 of the cavity 46, the two pedestal portions 411, 412 are disposed to face each other in the short-side direction of the cavity 46. The pedestal portions 411, 412 are respectively connected to the side L1 along the short side direction of the bottom surface 461 of the cavity 46, and are adjacent to the side L1 along the short side direction, and are connected to the long side direction along the bottom surface 461. The edges L2, L3 are set. Further, two castles 47, 48 (see Figs. 1, 2B, and 2C) are formed on the back surface of the rectangular frame (the other main surface 43) in the plane of the susceptor 4. The castle 47 is formed on the side surface of the casing, and is adjacent to one side of the short side direction of the other main surface 43 and adjacent to the one side, and two sides along the longitudinal direction of the other main surface 43. Formed as part of the side. The castle 48 is formed on the side surface of the casing, along the entire other side of the short side direction of the other main surface 43, and adjacent to the other side, along the longitudinal direction of the other main surface 43 Formed as part of the side. Further, in the first embodiment, two castles 47, 48 are formed such that the wall faces the other main surface 43 of the susceptor 4, and "as shown in Fig. 1 and Fig. 2A to Fig. 2C, on the pedestal. A through hole 49 penetrating the base of the susceptor 4 is formed in 4. The inner side surface 491 of the through hole 49 is -14-201240339 and is inclined to form a main surface 42 and the other main surface 43 of the base 4. The diameter of the through hole 49 is maximized at the end on the side of the other main surface 43 of the susceptor 4, and the end on the side of one main surface 42 of the susceptor 4 is minimized. Further, 'the base material of the susceptor 4 is formed by electrically and mechanically bonding the excitation electrodes 31' 32 of the crystal resonator piece 2, respectively, to the electrode pads 51, 52, and to the external parts or external devices. The external terminal electrodes 53, 54 and a wiring pattern (not shown) electrically connecting the electrode pad 51 and the external terminal electrode 53 and the electrode pad 52 to the external terminal electrode 54 are omitted. The electrodes 55, 56, 57 of the susceptor 4 are formed by the electrode pads 51, 52, the external terminal electrodes 53, 54 and the wiring pattern. The electrode pads 51, 52 are formed on the surfaces of the pedestal portions 411, 412, and the external terminal electrodes 53, 54 are formed in the castle 47''. Further, the wiring pattern is formed from the electrode pads 51, 52 of one main surface 42 of the susceptor 4 to the external terminal electrodes 53, 54 of the other main surface 43 via the inner side surface 491 of the through hole 49. Further, among the electrodes 55, 56, and 57 formed on the base material of the susceptor 4, the electrode 55 formed on one main surface 42 of the base material of the susceptor 4 (excluding the opening surface 492 of the through hole 49) is referred to as an internal electrode. (The following is referred to as the internal electrode 55 when it is different from the other electrodes 56 and 57), and the electrode 56 formed on the other main surface 43 of the base material of the susceptor 4 (excluding the opening surface 493 of the through hole 49) is called an electrode 56. The external electrode (hereinafter referred to as the external electrode 56 when it is different from the other electrodes 55 and 57), and the electrode 57 formed from the inner surface 491 of the through hole 49 to the opening surface 49 2, 493 of the through hole 49 It is called a through electrode (it is referred to as a through electrode 57 when it is necessary to distinguish from the other electrodes 55 and 56 below). In other words, in the first embodiment, the through electrode 57 is formed on the inner side of the through hole 49, the entire surface -15-201240339, and the peripheral portions of the opening surfaces 492 and 493 of the through electrode 57. The internal electrode 55 including the electrode pad 51'52, the external electrode 56 including the external terminal electrode 53'54, and the through electrode 57 are made of the same material as the first bonding layer 45, and are formed simultaneously with the first bonding layer 45. Further, a resin pattern 58 (resin material) is provided in a region of more than half of the bottom surface 461 of the cavity 46 of the main surface 42 of the susceptor 4, and a main surface 42 of the susceptor 4 is sealed by the resin pattern 58. The open surface 492 of the side, and the surface of the portion of the internal electrode 55 of the electrode pad 51, 52 of the electrode pad 51, the resin material constituting the resin pattern 58 can be used with any material constituting the susceptor 4 (for example, a glass material). As the resin material having good adhesion, a resin material composed of Benzocyclobutene (BCB), polyphenylene chelate, epoxy group, polyimine or fluorine resin can be suitably used. Further, in the first embodiment, the resin pattern 58 is formed on the bottom surface 461 of the cavity 46 by photolithography, and the resin material constituting the resin pattern 58 is a resin material having sensitivity. In addition, the photosensitive resin material of the present invention is a photosensitive resin composition containing a photosensitive agent and a resin in addition to a resin material composed of a photosensitive resin. The lid 6 is made of a glass material such as barium borate glass as shown in Fig. 1, Fig. 3A, and Fig. 3B, and forms a rectangular parallelepiped plate. The cover 6 is formed with a second bonding layer 61 along the outer periphery of the lower surface. The second bonding layer 61 of the cover 6 is formed of a laminated structure of a plurality of layers as shown in FIG. 3A, and the laminated structure of the plurality of layers is formed. A Mo film 611 composed of Mo is formed thereon, and an Au film 612 made of Au is formed thereon. The Mo film 611 is formed by sputtering by a sputtering method. The Au film 612 is formed by sputtering from -16 to 201240339 by sputtering. Further, before the bonding to the susceptor 4 on the second bonding layer 61 of the cover 6, the bonding material 71 is laminated as shown in FIGS. 3A and 3B. The bonding material 71 is composed of an Au/Sn film 711 laminated on the second bonding layer 61 and an Au film 712 formed by lamination on the Au/Sn film 711. Here, the Au/Sn film 711 is composed of an Au film formed by being laminated on the second bonding layer 61 and being formed by plating on the Au film. The Au film 712 is composed of an Au underplating film formed by being laminated on the Au/Sn film 711 and being formed by plating on an Au underplating film and being formed by electroplating. In the bonding material 71 as described above, the Au/Sn film 711 is melted by heating to form an AuSn alloy film. Further, the bonding material 71 may be formed by plating an AuSn alloy on the second bonding layer 61 of the cover 6. The crystal resonator piece 2 is composed of a substrate 21 of an AT-CUT wafer, and its outer shape is as shown in Figs. 1 and 4, and the two main faces 22, 23 are rectangular parallelepipeds forming a substantially rectangular plate. The crystal resonator piece 2 is provided with a vibrating portion 26 constituting a vibration region, and a joint portion 27 joined to the electrode pads 51, 52 of the susceptor 4, and the vibrating portion 26 and the joint portion 27 are integrally formed to constitute the substrate 21. Further, in the joint portion 27, the central portion 24 of the short side of the plane of the substrate 21 is notched. In the crystal resonator element 2, a pair of excitation electrodes 31 and 32 for excitation and a pair of terminal electrodes 33 and 34 electrically and mechanically bonded to the electrode pads 51 and 52 of the susceptor 4 are formed. The pair of excitation electrodes 31, 32 are pulled out to the pull-out electrodes 35, 36 of the pair of terminal electrodes 33, 34. The pair of excitation electrodes 31, 32 are pulled by the pull-out electrodes 35, 36 and electrically connected to a pair of terminal electrodes 33, 34, respectively. The pair of excitation electrodes 31, 32 are formed on the principal faces 22, 23 of the substrate 21, and the plane of the vibrating portion 26 is formed to face the center. The pair of excitation electrodes 31 and 32 are formed, for example, by a Cr-Au film laminated in the order of Cr and Au from the substrate 21 side. The pair of terminal electrodes 33, 34 are formed on the other main surface 23 of the joint portion 27. One of the pair of terminal electrodes 33, 34 is formed in the vicinity of one side including the longitudinal direction of the substrate 21, and the other terminal electrode 34 is formed to be included along the substrate. 21 is in the vicinity of the other side of the long side direction. Similarly to the excitation electrodes 31 and 32, the pair of terminal electrodes 33 and 34 are formed of a Cr-Au film laminated in the order of Cr and Au from the substrate 21 side. Further, as shown in Fig. 4, the pair of terminal electrodes 33, 34 are formed in a two-layer structure composed of an upper layer and a lower layer, the upper layer is made of Au, and the lower layer is made of Cr-Au. The area of the main surface of the lower layer (the plane of the plane view) is larger than the area of the main surface of the upper layer (the plane of the plane view). The pull-out electrodes 35, 36 are formed on the vibrating portion 26 and the joint portion 27, and are formed on the both main faces 22, 23 of the substrate 21 from the vibrating portion 26 to the joint portion 27 so as not to face each other. Similarly to the excitation electrodes 31 and 32, the pull-out electrodes 35 and 36 are formed of a Cr-Au film laminated in the order of Cr and Au from the substrate 21 side. As shown in Fig. 1, the crystal vibrator 1 composed of the above-described configuration is electrically and mechanically ultrasonically joined by the FCB method via the conductive bumps (not shown). By this bonding, the excitation electrodes 31, 32 of the crystal resonator piece-18-201240339 2 are electrically and mechanically bonded to the electrodes of the susceptor 4 via the pull-out electrodes 35, 36, the terminal electrodes 33, 34, and the conductive bumps. The pads 5 1, 52 are mounted on the susceptor 4 with the crystal resonator piece 2. Then, the cover 4 is temporarily joined by the FCB method on the susceptor 4 on which the crystal resonator element 2 is mounted, and then the bonding material 71, the first bonding layer 45, and the second bonding layer 61 are melted by heating in a nitrogen atmosphere. Thereby, the second bonding layer 61 of the cover 6 is bonded to the first bonding layer 45 of the susceptor 4 via the bonding material 71, and the crystal resonator 1 of the hermetic sealing crystal vibrating piece 2 is manufactured. The conductive bumps are electroplated bumps using a non-flowing member. Next, a method of manufacturing the crystal resonator 1 and the base 4 will be described with reference to Figs. 5A to 23B. In addition, in each of FIGS. 5A to 23B, a diagram including A in the figure number (hereinafter referred to as A diagram) is a partial schematic plan view of a wafer of a process of manufacturing the susceptor 4, and the figure B contains B. The figure is a schematic cross-sectional view of the cut surface when the wafer shown in FIG. A is cut along the one-point chain line of FIG. First, the two main faces of the crystal 8 composed of the glass material forming the plurality of susceptors 4 are washed (see Figs. 5A and 5B). Once the cleaning of the wafer 8 is completed, as shown in Figs. 6A and 6B, the protective layer 91 is formed on the both main faces 81, 82. Specifically, after the Mo layers made of Mo are sputtered by sputtering on the both main faces 81, 82 of the wafer 8, the Au layer is formed by sputtering on the Mo layer to form an Au layer. A protective layer 91 composed of a Mo layer and an Au layer. After the protective layer 91 is formed on the two main faces 810, 82 of the wafer 8, as shown in FIG. 7A and FIG. 7B, the light is coated on the protective layer 91 by spin coating method -19-201240339 Resist A positive photoresist layer 94 is formed. Then, after the positive photoresist layer 94 is formed on the protective layer 91, the outer shape of the susceptor 4 shown in FIGS. 2A to 2C, the bottom surface of the cavity 46 (except the portion where the pedestal portions 411 and 412 are formed), and the like are formed. The positive photoresist layer 94 at the position of the through hole 49 is exposed and developed. Next, the outer shape of the susceptor 4 exposed by exposure and development, the bottom surface of the cavity 46 (except for the portions forming the pedestal portions 411, 412), and the protective layer 91 at the position where the through holes 49 are formed are etched. After etching the outer shape of the susceptor 4, the bottom surface of the cavity 46 (except for the portion where the pedestal portions 411 and 412 are formed), and the protective layer 91 at the position where the through hole 49 is formed, the wafer 8 is spin-coated on the wafer 8. The photoresist is coated to form a new positive photoresist layer 94. After the new positive photoresist layer 94 is formed, the outer shape of the susceptor 4, the bottom surface of the cavity 46 (including the portion where the pedestal portions 411, 412 are formed), and the positive photoresist layer 94 at the position where the through hole 49 is formed are exposed. And development, as shown in FIGS. 8A and 8B, the outer shape of the susceptor, the bottom surface of the cavity 46 (except for the portions forming the pedestal portions 411, 412), and the portion of the wafer 8 forming the through hole 49 are exposed. And the protective layer 91 at the position where the pedestal portions 411, 412 are formed is exposed. Next, as shown in FIG. 9A and FIG. 9B, a portion of the outer shape of the susceptor 4, a part of the cavity 46, and a part of the cavity 46 are etched by wet etching using an etching solution using the protective layer 91 and the positive photoresist layer 94 as a mask. And a part of the through hole 49 (a part of the inner side surface 491). After the uranium engraving of the wafer 8 is completed, as shown in Figs. 10A and 10B, the gold -20-201240339 is an etched protective layer 91 located at (exposed to) the pedestal portions 411, 412. After the metal is etched at the protective layer 91 at the position where the pedestal portions 411, 412 are formed, as shown in FIGS. 11A and 11B, the protective layer 91 and the positive photoresist layer 94 are used as masks by wet etching using an etching solution. The entire outer shape of the susceptor 4, the entire cavity 46 (including the pedestal portions 411 and 412), and the entire through hole 49 (the entire inner side surface 491) are etched. After the etching of the wafer 8 is completed, as shown in Figs. 12A and 1B, the positive photoresist layer 94 is peeled off. After the positive photoresist layer 94 is removed by lift-off, as shown in Figs. 13A and 13B, the exposed protective layer 91 is removed by metal etching, and the both main faces 81, 82 of the wafer 8 are exposed. After the metal uranium engraved protective layer 91, as shown in Figs. 14A and 14B, a metal layer 92 is formed on the wafer 8 (the two main faces 81, 82 and the inner side surface 491 of the through hole 49). Specifically, after the Mo layer formed of Mo is sputtered by the sputtering method on the wafer 8 (the two main faces 81, 82 and the inner side surface 491 of the through hole 49), sputtering is performed on the Mo layer. The Au layer formed of Au is formed by sputtering to form a metal layer 92 composed of a Mo layer and an Au layer. The metal layer 92 formed here becomes the sputter film 451 constituting the first bonding layer 45 (see FIG. 2B). After the metal layer 92 is formed on the both main faces 81, 82 of the wafer 8, on the metal layer 92. The photoresist is applied by a dip coating method to form a new positive photoresist layer 94. After the positive photoresist layer 94 is formed on the metal layer 92, the first bonding layer 45 of the susceptor 4, the electrode pads 51, 52, the external terminal electrodes 53, 54 and the wiring pattern are formed. The positive photoresist layer 94 is exposed and developed, and as shown in FIGS. 15A and 15B, the first bonding layer 45, the electrode pads 51 and 52, the external terminal electrodes 53, 54 and the positions where the wiring patterns are formed are formed. The metal layer 92 is exposed. On the metal layer 92 exposed by exposure and development, as shown in FIGS. 16A and 16B, Au is plated to form a plating layer 93, and a first bonding layer 45, electrode pads 51, 52, and external terminal electrodes 53 are formed. , 54 and the outer film of the wiring pattern. Further, the plating layer 93 formed here becomes the plating film 452 of the first bonding layer 45 (see Fig. 2B). After the first bonding layer 45, the electrode pads 51, 52, the external terminal electrodes 5 3, 5 4 and the wiring pattern are formed, as shown in Figs. 17A and 17B, the positive photoresist layer 94 is removed. Next, as shown in Figs. 18A and 18B, a photoresist is applied onto the wafer 8 by a dip coating method to form a new positive photoresist layer 94. After the positive photoresist layer 94 is formed on the wafer 8, the first bonding layer 45, the electrode pads 51, 52, the external terminal electrodes 53, 54 and the wiring pattern are formed to form the first bonding layer 45 and the electrode bonding. The pads 51, 52, the external terminal electrodes 53, 54 and the positive photoresist layer 94 on the wafer 8 other than the position of the wiring pattern are exposed and developed, and as shown in FIGS. 19A and 19B, the first bonding layer 45 is formed. The electrode pads 51, 52, the external terminal electrodes 53, 54 and the metal layer 92 other than the position of the wiring pattern are exposed. Next, as shown in FIG. 20A and FIG. 20B, the metal layer 92 exposed by exposure and development is removed by metal etching to form the first bonding layer 45, the electrode pads -22-201240339 pads 51, 52, and the external terminal electrodes 53, 54 And wiring patterns. After the first bonding layer 45, the electrode pads 51, 52, the external terminal electrodes 53, 54 and the wiring pattern are formed, as shown in Figs. 21A and 21B, the positive photoresist layer 94 is removed. After the positive photoresist layer 94 is removed from the wafer 8, as shown in FIGS. 22A and 22B, the both main faces 81, 82 of the wafer 8 and the opening faces 492, 493 of the through holes 49 are dipped by coating or A photosensitive resin material is applied by a spray coating method to form a resin layer 95. After the resin layer 95 is formed on the wafer 8, as shown in Figs. 23A and 23B, the resin layer 95 at a position other than the position at which the wiring pattern 58 is formed is exposed and developed to form a resin pattern 58. By the resin pattern 58, the opening surface 492 of the through hole 49 on the one main surface 81 side of the wafer 8 is sealed with a resin, and the wiring pattern (one part of the internal electrode 55) formed on one main surface 81 of the wafer 8 is covered. )s surface. After the resin pattern 58 is formed, a plurality of individual segments are separately formed on the susceptor 4 of the wafer 8 to be diced, and a plurality of susceptors 4 shown in FIGS. 2A to 2C are produced as shown in FIGS. 2A to 2C. The crystal vibrating piece 2 shown in FIG. 4 is placed on the susceptor 4, and the crystal vibrating piece 2 is electrically and ultrasonically ultrasonically bonded to the susceptor 4 via the conductive bumps by the FCB method, and the crystal vibrating is mounted on the susceptor 4 Slice 2. Further, in another process, the joint member 7 1 is laminated on the second joining layer 61 of the lid 6 (see Figs. 3A and 3B). Then, the susceptor 4 on which the crystal resonator element 2 is mounted is temporarily bonded to the lid 6 by the FCB method, and further heated in a nitrogen atmosphere to melt the bonding material 71, the first bonding layer 45, and the second bonding layer 61, and 23-201240339 The first bonding layer 45 of the susceptor 4 and the second bonding layer 61 of the cover 6 are integrally joined by the bonding material 71, and the crystal vibrator 1 shown in Fig. 1 is manufactured. Further, in the manufacturing process of the susceptor 4, the process of forming the through-holes 49 in the uranium-engraved wafer 8 and the base material of the susceptor 4 is referred to as a through-hole forming process. Further, by using the metal layer 92 and the plating layer 93 patterned by the photolithography method, the electrode pads 51, 52, the external terminal electrodes 53, 54 and the wiring pattern are formed on the base material of the susceptor 4 (that is, The engineering of the internal electrode 55, the external electrode 56, and the through electrode 57) is referred to as an electrode formation process. Further, the resin pattern 58 is formed by photolithography, and at least one of the opening faces 492 and 493 of the through hole 49 is sealed with a resin material (resin pattern 58). In the crystal vibrator 1 of the first embodiment, the through electrode 57 is formed on the entire inner surface 49 1 of the through hole 49. Therefore, the through electrode 75 can be electrically connected to the inside of the main surface 42 of the susceptor 4 by the through electrode 57. The electrode 55 and the external electrode 56 formed on the other main surface 43 of the susceptor 4 stabilize the conduction state of the through hole 49. Further, since the opening surface 492 of the through hole 49 located on the one main surface 42 side of the susceptor 4 is sealed by the resin pattern 58 (resin material), the inside of the package of the crystal resonator 1 does not pass through the through hole 49. In the case of exposure to external air, the airtightness inside the package of the crystal vibrator 1 is sufficiently maintained. Further, since the resin pattern 58 is formed in half or more of the bottom surface 461 of the cavity 46, the strength of the surface of the susceptor 4 can be reinforced by the resin pattern 58. Further, the crystal vibrator 1 of the first embodiment is an opening surface 492 of the through hole 49 located on one main surface 42 side of the susceptor 4 and the periphery of the opening surface 492 - 24, 201240339 (specifically, in the cavity The resin pattern 58 is widely formed in a region of half or more of the bottom surface 461 of 46, whereby the contact area of the resin pattern 58 with the substrate (glass material) constituting the susceptor 4 can be sufficiently ensured. Therefore, the bonding strength of the resin pattern 58 to the substrate constituting the susceptor 4 can be sufficiently ensured, and the airtight stability of the package of the crystal resonator 1 can be sufficiently ensured. <Embodiment 2> The crystal vibrator 1 of the second embodiment has almost the same configuration as the crystal vibrator 1 of the first embodiment. Therefore, only the points different from the crystal resonator 1 of the first embodiment will be described below. The crystal vibrator 1 of the second embodiment has a configuration in which the susceptor 4 is different from the crystal vibrator 1 of the first embodiment. Figs. 24A to 24C are schematic views showing a schematic configuration of a susceptor 4 according to a second embodiment, Fig. 24A is a schematic plan view, and Fig. 24B is a view showing a cutting when the susceptor 4 is cut along a one-dot chain line of Fig. 24A. A schematic cross-sectional view of the cross section, and Fig. 24C is a schematic bottom view. The susceptor 4 of the crystal vibrator 1 of the second embodiment has four castles 4 7A, 47B, 48A, 48B as shown in Figs. 24B and 24C on the back surface of the frame (the other main surface 43) having a rectangular shape in plan view. . Specifically, the castle 47A is one end portion which is provided from one end portion of one side in the longitudinal direction of the other main surface 43 to one side in the short side direction adjacent to the one end portion, the castle 47B is the other end portion provided from one end portion of the other side in the longitudinal direction of the other main surface 43 to one side in the short side direction adjacent to the one end portion. Further, the castle 48A is provided from the other end side of the side of the long side of the other main surface 43 to the side of the side of the side of the other side of the main side 43 to the other side of the short side adjacent to the other end portion. One end portion of the castle 48B is provided from the other end portion of the other side along the long side direction of the other main surface 43 to the other side along the short side direction adjacent to the other end portion One end. Further, external terminal electrodes 53A, 53B, 54A, 54B are formed in the four castles 4 7A, 47B, 48A, 48B, respectively. Then, the external terminal electrode 53A and the electrode pad 51 are electrically connected by a wiring pattern, and the external terminal electrode 54B and the electrode pad 52 are electrically connected by a wiring pattern. Then, as shown in FIGS. 24A to 24C, the resin The pattern 58 is not formed on one main surface 42 of the susceptor 4 constituting the bottom surface 461 of the cavity 46, but is the other main surface 43 of the susceptor 4 constituting the back surface of the casing. Specifically, the resin pattern 58 is provided on the other main surface 43 of the susceptor 4 at a position facing the bottom surface of the cavity 46, and the through hole of the other main surface 43 is sealed by the resin pattern 58. The opening face of 49 is 4 9 3 . In the manufacturing process shown in FIGS. 23A and 23B, the susceptor 4 of the crystal resonator 1 of the second embodiment is formed such that the resin pattern 58 is not formed on one main surface 81 of the wafer 8, but is crystal. The other main surface 82 of the circle 8 is manufactured in the same manner as the susceptor 4 of the crystal resonator 1 of the first embodiment. Since the crystal vibrator 1 of the second embodiment has the through electrode 57 formed on the entire inner surface 49 1 of the through hole 49, the through electrode 75 can be electrically connected to the inside of the main surface 42 of the susceptor 4 by the through electrode 57. The electrode 55 and the external electrode 56 formed on the other main surface 43 of the susceptor 4 stabilize the conduction state inside the through hole 49. Further, since the opening surface 493 of the through hole 49 located on the other main surface 43 side -26-201240339 of the susceptor 4 is sealed by the resin pattern 58 (resin material), the crystal vibrator 1 is not packaged. When the inside is exposed to the outside air through the through hole 49, the airtightness inside the package of the crystal vibrator 1 is sufficiently maintained. Further, on the other main surface 43 of the susceptor 4, a resin pattern 58 is formed at a position opposed to the bottom surface of the cavity 46, so that the strength in the surface direction of the susceptor 4 is obtained by the resin pattern 58. Reinforce. Further, the crystal vibrator 1 of the second embodiment is an opening surface 493 of the through hole 49 located on the other main surface 43 side of the susceptor 4 and the periphery of the opening surface 493 (specifically, the susceptor 4 The resin pattern 58 is widely formed in a region of more than half of the portion of the main surface 43 opposite to the bottom surface of the cavity 46, whereby the resin pattern 58 and the substrate (glass material) constituting the susceptor 4 can be sufficiently ensured. Contact area for direct contact. Therefore, the bonding strength of the resin pattern 58 to the substrate constituting the susceptor 4 can be sufficiently ensured, and the airtight stability of the package of the crystal resonator 1 can be sufficiently ensured. In the configuration of the crystal vibrator 1 of the second embodiment, the crystal vibrator 1 of the second embodiment is the same as the crystal vibrator 1 of the first embodiment, and the crystal vibrator 1 of the second embodiment can achieve the crystal vibration of the first embodiment. Sub-1 has the same effect. <Embodiment 3> The crystal vibrator 1 of the third embodiment has almost the same configuration as the crystal vibrator 1 of the first embodiment, and the same effects as those of the crystal vibrator 1 of the first embodiment can be achieved. Therefore, only the points different from the crystal resonator 1 of the first embodiment will be described below. -27- 201240339 The crystal vibrator 1 of the third embodiment is different from the crystal vibrator 1 of the first embodiment in the configuration of the susceptor 4. 25A to 25C are schematic views showing a schematic configuration of a susceptor 4 according to a third embodiment, wherein Fig. 25A is a schematic plan view, and Fig. 25B is a view showing a cutting when the susceptor 4 is cut along a one-dot chain line of Fig. 25A. The state of the cross section is a schematic cross-sectional view, and Fig. 25C is a schematic bottom view. In the susceptor 4 of the crystal resonator 1 of the third embodiment, the resin pattern 58 is a through hole 49 located in a main surface 42 of the susceptor 4 constituting the bottom surface 461 of the cavity 46 as shown in Figs. 25A to 25C. The opening surface 492 and the vicinity of the opening surface 492 and the opening surface 493 of the through hole 49 of the other main surface 43 of the susceptor 4 constituting the rear surface of the casing are formed in the vicinity of the opening surface 493. That is, in the third embodiment, the opening faces 492, 493 of both the through holes 49 are sealed by the resin pattern 58. Further, in the third embodiment, the inside of the through hole 49 is filled with the resin material 59 used for forming the resin pattern 58. In the manufacturing process shown in Figs. 22A and 22B, the susceptor 4 of the crystal resonator 1 of the third embodiment is formed on the principal faces 81, 82 of the wafer 8 and the opening faces 492, 493 of the through holes 49. The resin layer 95 is applied by a dip coating method to form the resin layer 95, and the resin material 59 is filled in the through hole 49. In the manufacturing process shown in FIGS. 23A and 23B, The resin pattern 58 is only on the opening surface 492 of the through hole 49 of one main surface 81 of the wafer 8 and the vicinity of the opening surface 492, and the opening surface 493 of the through hole 49 located on the other main surface 82 of the wafer 8 and The vicinity of the opening surface 493 is formed, and the rest is manufactured by the same method as the susceptor 4 of the crystal resonator 1 of the first embodiment. Since the crystal vibrator 1 of the third embodiment has the through electrode 57 formed on the entire inner surface 491 of the through hole 49, the internal electrode formed on one main surface 42 of the susceptor 4 can be electrically connected by the through electrode 57. The external electrode 56 formed on the other main surface 43 of the susceptor 4 stabilizes the conduction state inside the through hole 49. Further, since the opening faces 492 and 493 of the through holes 49 are sealed by the resin pattern 58 (resin material), and the resin material 59 is filled in the inside of the through hole 49, the crystal vibrator 1 is not present. The inside of the package is exposed to the outside air through the through hole 49, and the airtightness inside the package of the crystal vibrator 1 can be sufficiently maintained. In the third embodiment, the resin material 59 that is filled in the inside of the through hole 49 is the same as the resin material constituting the resin pattern 58 and does not contain a conductive material. However, the resin material 59 is not limited thereto, and is, for example, filled. The resin material 59 inside the hole 49 may not be the same as the resin material constituting the resin pattern 58, or may be a conductive material. When the inside of the through hole 49 is filled with a resin material containing a conductive material, the conduction state of the through hole 49 is more stable. In the configuration of the crystal vibrator 1 of the third embodiment, the configuration other than the above is the same as that of the crystal vibrator 1 of the first embodiment. The crystal vibrator 1 of the third embodiment can achieve the crystal vibration of the first embodiment. Sub-1 has the same effect. <Fourth Embodiment> The crystal vibrator 1 of the fourth embodiment has almost the same configuration as the crystal vibrator 1 of the first embodiment. Thus, the same effect as that of the crystal vibration of the first embodiment -29-201240339 sub-1 can be achieved. Therefore, only the points different from the crystal resonator 1 of the first embodiment will be described below. The crystal vibrator 1 of the fourth embodiment has a configuration in which the susceptor 4 is different from the crystal vibrator 1 of the first embodiment. 26A to 26C are schematic views showing a schematic configuration of a susceptor 4 according to a fourth embodiment, wherein Fig. 26A is a schematic plan view, and Fig. 26B is a view showing a cutting when the susceptor 4 is cut along a one-dot chain line of Fig. 26A. A schematic cross-sectional view of the cross section, and Fig. 26C is a schematic bottom plan view. In the susceptor 4 of the crystal vibrator 1 of the fourth embodiment, the back surface (the other main surface 43) of the rectangular frame in the plan view is provided with four castles 47A, 47B' 48A as shown in Figs. 26B and 26C. , 48B. Specifically, the 'castle 47 A is an end portion which is provided from one end portion of one side in the longitudinal direction of the other main surface 43 to one side in the short side direction adjacent to the one end portion, the castle 47B is the other end portion provided from one end portion of the other side in the longitudinal direction of the other main surface 43 to one side in the short side direction adjacent to the one end portion. Further, the castle 48A is provided from the other end portion along one side in the longitudinal direction of the other main surface 43 to the other end portion along the other side in the short side direction adjacent to the other end portion. The castle 48B is provided from the other end portion of the other side along the longitudinal direction of the other main surface 43 to the other end portion along the other side in the short side direction adjacent to the other end portion. Further, external terminal electrodes 53A, 53B, 54A, 54B are formed in the four castles 47A, 47B, 48A, 48B, respectively. Then, the external terminal electrode 53A and the electrode pad 51 are electrically connected by a wiring pattern, and the external terminal drain 54B and the electrode pad 52 are electrically connected by a wiring pattern -30-201240339 and formed on the susceptor 4 As shown in FIG. 26A to FIG. 26C, the first bonding layer 45A of the main surface is formed by laminating a plating film 454 on the sputtering film 453 in the same manner as in the first embodiment. However, the configuration of the metal film 453 and the plating film 454 is different from that of the first embodiment. In the first bonding layer 45A of the susceptor 4 of the crystal resonator 1 of the fourth embodiment, the sputtering film 453 is sputtered on a Ti film made of Ti formed by a sputtering method. A Cu film made of Cu is formed by sputtering. Further, the plating film 454 is formed by plating a Ni film made of Ni on the sputter film 453, and forming an Au film made of Au on the Ni film, and forming an electrode 55 of the susceptor 4, The metal layer 92 of 56, 57 is made of the same material as the sputter film 453 constituting the first bonding layer 45A. Therefore, in the manufacturing process of the susceptor 4 of the crystal resonator 1 of the fourth embodiment, the Ti layer formed of Ti is formed by sputtering on both main surfaces 81 and 82 of the wafer 8 to form a Ti layer. The Cu layer is formed by sputtering on the Ti layer by sputtering, thereby forming the protective layer 91 and the metal layer 92 (see FIGS. 6A, 6B, 14A, and 14B). Further, in the fourth embodiment, among the internal electrodes 55, the electrode pads 51 connected to the excitation electrodes of the crystal resonator element, and the internal electrodes 55 of the portion 52 are formed by the metal layer 92 and the plating layer 93, and the electrode bonding is performed. The internal electrode 55 other than the pads 5 1, 52 is composed only of the metal layer 92 as shown in FIGS. 26A to 26C. Further, the external electrode 56 includes all of the external terminal electrodes 53A, 53B, and 5 4A and 54B, and is composed of a metal layer 92 and a plating layer 93. Further, in the fourth embodiment, the plating layer 93 constituting the electrodes 55' 56, 57 is made of the same material as the plating film 454 constituting the first bonding layer 45A. Therefore, in the manufacturing process of the susceptor 4 of the crystal resonator 1 of the fourth embodiment, a Ni layer formed of Ni is formed by plating on the metal layer 92 to form a Ni layer, and then an Au layer is formed on the Ni layer. The formation of the plating layer 93 is performed (see FIGS. 16A and 16B). Further, in the fourth embodiment, the resin pattern 58 is formed on both main faces 42, 43 of the susceptor 4 as shown in Figs. 26A to 26C. Specifically, a resin pattern 58 is formed on a portion of the bottom surface 461 of the cavity 46 and the back surface of the casing opposite to the bottom surface 461 of the cavity 46. Thereby, the opening faces 492 493 of the through holes 49 are sealed by the resin material, and the portions other than the electrode pads 51 and 52 of the internal electrode 55, that is, the portions of only the portion formed of the plating layer 93 The surface of the electrode 55 is covered with a resin. The surface of a portion of the external electrode 56 is coated with a resin. Therefore, in the manufacturing process of the susceptor 4 of the crystal resonator 1 of the fourth embodiment, the resin pattern 58 is formed on the both main faces 82 of the wafer 8, and 83 θ is the pedestal of the crystal vibrator 1 of the fourth embodiment. 4 is manufactured in the same manner as the base 4 of the crystal resonator 1 of the first embodiment. Similarly to the crystal resonator 1 of the first embodiment, the crystal vibrator 1 of the fourth embodiment has the through electrode 57 formed on the entire inner surface 491 of the through hole 49. Therefore, the through electrode 57 can be electrically connected to each other. The internal electrode 55 of one main surface 42 of the susceptor 4 and the external electrode 56 formed on the other main surface 43 of the susceptor 4 stabilize the conduction state inside the through hole 49. Further, since the opening faces 492, 493 of the through holes 49 are sealed by the resin pattern 58 - 32 - 201240339 (resin material), the inside of the package of the crystal vibrator 1 is not exposed through the through holes 49 to In the case of external air, the airtightness inside the package of the crystal vibrator 1 is sufficiently maintained. Further, since the resin sheets 58 are formed on the main surfaces 42 and 43 of the susceptor 4, specifically, the bottom surface 46 1 of the cavity 46 and the portion of the back surface of the housing facing the bottom surface 461 of the cavity 46, the resin pattern 58 is formed. The strength of the surface direction of the susceptor 4 can be reinforced by the resin pattern 58. Further, the crystal vibrator 1 of the fourth embodiment is an opening surface 492, 493 of the through hole 49 on the side of the main faces 42 and 43 of the susceptor 4, and around the opening surface 493 (specifically, in the cavity). The resin pattern 58 is widely formed in a region of more than half of the bottom surface 461 of the 46 and a region of the other main surface 43 opposite to the bottom surface of the cavity 46, whereby the resin pattern 58 can be sufficiently ensured. The contact area of the substrate (glass material) constituting the susceptor 4 in direct contact. Therefore, the bonding strength of the resin pattern 58 to the substrate constituting the susceptor 4 can be sufficiently ensured, and the airtight stability of the package of the crystal resonator 1 can be sufficiently ensured. Further, in the crystal vibrator 1 of the fourth embodiment, the electrode The internal electrode 55 other than the pads 5 1, 52 is covered with the resin pattern 5$. Therefore, the electrode surface (Cu layer) of the internal electrode 55 other than the electrode pads 51, 52 is not oxidized. In the crystal vibrator 1 of the fourth embodiment, the internal electrode 55 other than the electrode pads 51 and 52, specifically, the internal electrode 55 of the portion covered with the resin pattern 58 does not use Au ' Form 1 'The amount of Au necessary for the formation of the electrode is small' and the manufacturing cost is lowered. Further, in the crystal resonator 1 of the fourth embodiment, the second bonding layer formed on the lower surface of the cover (not shown in the figure of -33-201240339) is a Ti film formed of Ti in this order from the cover side, and is made of Cu. The Cu film and the Ni film made of Ni are formed. The Ti film was formed by sputtering by a sputtering method, and a Cu film was formed by sputtering on the Ti film by sputtering. Further, the Ni film is formed by a plating treatment on the Cu film. Further, the bonding material is laminated on the second bonding layer of the cap before bonding with the susceptor 4. The bonding material is composed of an Au/Sn film laminated on the second bonding layer and an Au film formed by laminating on the Au/Sn film. Here, the Au/Sn film is composed of an Au film formed by lamination on the second bonding layer and a Sn film formed by plating on the Au film. Further, the Au film is composed of an Au underplating plating film formed by lamination on an Au/Sn film and an Au plating film laminated on the Au underlying plating film to be plated. In such a joint, the Au/Sn film is melted by heating to become an AuSn alloy film. Further, the bonding material may be formed by plating an AuSn alloy on the second bonding layer of the cap. In the configuration of the crystal vibrator 1 of the fourth embodiment, the configuration is the same as that of the first embodiment. The crystal vibrator 1 of the first embodiment can achieve the same effect as the crystal vibrator 1 of the first embodiment. Further, in the susceptor 4 of the crystal resonator 1 of the fourth embodiment, among the external electrodes 56, the external electrode 56 of the portion covered with the resin pattern 58 may be formed of only a Ti layer and a Cu layer. The metal layer 92 is constructed. According to this configuration, the amount of Au necessary for the formation of the electrode can be further reduced, and the pressure can be reduced. In the crystal vibrator 1 of the fourth embodiment, the Ti film constituting the metal film of the first bonding layer 45, the Ti layer constituting the underlayer of the metal layer 92 and the protective layer 91, and the second bonding layer are formed. The Ti film of the bottom layer may be changed to a metal layer (metal film) having a good bonding property between the material constituting the wafer 8 (for example, a glass material) and Cu constituting the Cu layer, for example, W, Cr, or Mo. Contact metal layer (contact metal film). <Embodiment 5> Fig. 27 is a schematic side view showing an internal space of a crystal oscillator according to a fifth embodiment. 28A and 28B are schematic structural views showing a susceptor of a crystal oscillator according to a fifth embodiment, and Fig. 28A is a schematic plan view, and Fig. 28B is a schematic bottom view. As shown in FIG. 27, the crystal oscillator 10 of the fifth embodiment is provided with a 1C wafer 20 (an electronic component element of the present invention) and a crystal resonator piece 2 composed of an AT-CUT crystal (in the present invention). a so-called electronic component component, and a susceptor 4 for holding the 1C wafer 20 and the crystal resonator element 2, and hermetically sealing the crystal resonator element 2 (the sealing member for electronic component packaging of the first sealing member in the present invention), And a cover 6 configured to be opposite to the susceptor 4 for hermetically sealing the excitation electrodes 31, 32 (electrodes of the so-called electronic component elements of the present invention) held by the crystal resonator plate 2 of the susceptor 4 (in the present invention) The so-called second sealing member). The crystal oscillator 10 is similar to the crystal vibrator 1 of the first embodiment, and the package is constituted by the susceptor 4 and the cover 6 (in the electronic component package of the present invention). The susceptor 4 and the cover 6 are made of Au. The bonding material -35 - 201240339 71 composed of the alloy of Sn is joined to form an inner space 11 which is hermetically sealed. In the internal space 1 1, the crystal resonator piece 2 is electrically and ultrasonically bonded to the susceptor 4 by the FCB method using the conductive bumps 906 such as gold bumps. Then, as shown in Fig. 27, the 1C wafer 20 is ultrasonically bonded and electrically connected by the FCB method using the conductive bumps 907 such as gold bumps. Next, each configuration of the crystal oscillator 10 will be described. However, the configuration of the cover 6 and the crystal resonator element 2 is the same as that of the cover 6 and the crystal resonator element 2 of the crystal resonator 1 of the first embodiment, and thus the description thereof will be omitted. The 1C wafer 20 is ultrasonically bonded and electrically connected to the susceptor 4 of the internal space 11 by an FCB method using conductive bumps 907 such as gold bumps. More specifically, the 1C wafer 20 includes six terminal electrodes (not shown), and two of the six terminal electrodes are via electrode pads 51 and 52 and a first wiring pattern which will be described later. 501 is electrically connected to the excitation electrodes 31 and 32 of the crystal resonator piece 2, and the remaining four terminal electrodes are electrically connected to the base line 502 or the third wiring pattern 503 which will be described later via the susceptor 4 The external terminal electrodes 53A, 53B, 54A, 54B on the back surface of the housing of the socket 4. The susceptor 4 of the crystal oscillator 1 is formed of a glass material similarly to the susceptor 4 of the first embodiment, and as shown in FIG. 27, the bottom portion 41 and the outer periphery of one main surface 42 of the susceptor 4 are formed. A box-shaped body formed by the wall portion 44 extending from the bottom portion 41 to the upper portion. The susceptor 4 is formed by etching a plate of a rectangular parallelepiped by photolithography. The top surface of the wall portion 44 of the base 4 is a joint surface with the cover 6, and the first joint layer 45 for engaging the lid 6 is provided on the joint surface. The first bonding layer -36-201240339 45 has the same structure as the first bonding layer 45 of the susceptor 4 of the first embodiment, and is composed of a laminated structure of a plurality of layers in which a plating film is formed on a sputter film. That is, the sputtered film is formed by sputtering a Au film made of Au by a sputtering method on a Mo film formed by sputtering using a sputtering method. Further, the plating film is formed by plating an Au film made of Au on a sputter film. Similarly to the susceptor 4 of the first embodiment, a cavity 46 surrounded by the bottom portion 41 and the wall portion 44 is formed in the susceptor 4 of the crystal oscillator 10, and the cavity 46 is as shown in Figs. 27 and 28A. As shown in Fig. 28B, the plane is formed in a rectangular shape, and the wall surface of the cavity 46 is formed in an inclined shape. The bottom surface 461 of the cavity 46 is provided with a pedestal portion 401 which is provided only in contact with the center portion of the side L1 along the short side direction. Further, four castles 4 7A' 4 7B, 48A, 48B are formed on the back surface of the rectangular frame (the other main surface 43) on the plane of the susceptor 4. Specifically, the castle 47A is an end portion which is provided from one end portion of one side in the longitudinal direction of the other main surface 43 to one side in the short side direction adjacent to the one end portion, the castle 47B is the other end portion provided from one end portion of the other side in the longitudinal direction of the other main surface 43 to one side in the short side direction adjacent to the one end portion. Further, the castle 48A is provided from the other end portion along one side in the longitudinal direction of the other main surface 43 to the other end portion along the other side in the short side direction adjacent to the other end portion. The castle 48B is provided from the other end portion of the other side along the longitudinal direction of the other main surface 43 to the other end portion along the other side in the short side direction adjacent to the other end portion. Further, in the susceptor 4, as shown in Figs. 27, 28A, and 28B, the through holes 49 of the base material of the through-37-201240339 through base 4 are respectively formed in the bottom surface 461 of the cavity 46. corner. The inner side surface 491 of the through hole 49 is inclined with respect to one main surface 42 and the other main surface 43 of the susceptor 4, and is formed in an inclined shape. The diameter of the through hole 49 is formed to be the largest at the end on the other main surface 43 side of the susceptor 4, and the end portion on the one main surface 42 side of the susceptor 4 is formed to the minimum. Further, on the base material of the susceptor 4, a pair of electrode pads 51, 52 electrically connected to the excitation electrodes 31, 32 of the crystal resonator piece 2, and electrically connected to an external component or an external device are formed. The external terminal electrodes 53A, 53B, 54A, 54B and the first wiring pattern 501 electrically connecting the electrode pads 51, 52 to the electrodes (not shown) of the 1C wafer 20, and the external terminal electrodes 53A, 53B and 1C The second wiring pattern 502 electrically connected to the electrodes (not shown) of the wafer 20 and the third wiring pattern 503 electrically connecting the external terminal electrodes 54 A and 54B to the electrodes (not shown) of the 1C wafer 20 are provided. The electrode pads 55 of the susceptor 4 are formed by the electrode pads 51, 52, the external terminal electrodes 53A, 53B, 5 4A, 54B, the first wiring pattern 501, the second wiring pattern 502, and the third wiring pattern 503. 56,57. The electrode pads 51, 52 are formed on the surface of the pedestal portion 401. Further, conductive bumps 906 for bonding the crystal vibrating reeds 2 are provided on the electrode pads 51, 52. Further, external terminal electrodes 53A, 53B, 54A * 54B are formed in the castles 47A, 47B, 48A, 48B. Further, the first wiring pattern 501 is formed from the electrode pads 51, 52 of one main surface 42 of the susceptor 4 to the bonding portion of the bonding 1C wafer 20. Then, the second wiring pattern 502 and the third wiring pattern 503 are formed from the joint portion of the 1C wafer 20 of one main surface 42 of the joint base 4 to the external terminal of the other main surface 43 via the inner surface 491 of the through hole 49. Electrodes 53A, 53B, 54A, 54B. -38- 201240339 Here, the 'electrode pad 51' 52, the external terminal electrodes 53A, 53B, 5 4A' 5 4B, the first wiring pattern 501, the second wiring pattern 502, and the third wiring pattern 503 are made of the first The bonding layer 45 is composed of the same material. Further, each of the four corner portions of the bottom surface 461 of the cavity 46 (one main surface 42 of the susceptor 4) and the rear surface of the frame body (the other main surface 43) of the susceptor 4 are penetrated. The opening surface 493 of the hole 49 and the vicinity of the opening surface 493 are provided with a resin pattern 58 (resin material). That is, the opening surface 492 of each of the through holes 49 on the one main surface 42 side of the susceptor 4 and the opening surface 493 of each of the through holes 49 on the other main surface 43 side of the susceptor 4 are sealed by the resin pattern 58. At the same time, the surface of a part of the second wiring pattern 502 and the third wiring pattern 503 is covered with a resin. Further, a resin material is filled in the inside of the through hole 49. Here, the resin material constituting the resin pattern 58 and the resin material filled in the through hole 49 can be the same resin material as the resin material constituting the resin pattern 58 of the susceptor 4 of the first embodiment. Further, as shown in FIG. 27, FIG. 28A, and FIG. 28B, the first wiring pattern 501 and the second wiring pattern 502 are intersected, and at the intersection, the resin pattern 58 is interposed between the first wiring pattern 501 and the second wiring. Between the patterns 502. In other words, an electrode (a part of the other electrode in the present invention) constituting a part of the first wiring pattern 501 is formed on the internal electrode 55 constituting a part of the second wiring pattern 502 via the resin pattern 58. In the crystal oscillator 10 of the fifth embodiment, the through electrode 57 is formed on the entire inner surface 491 of the through hole 49. Therefore, the through electrode 75 can be electrically connected to one main surface of the susceptor 4. The internal electrode 55 of 42 and the external electrode 56 formed on the other main surface 43 of the susceptor 4 are stabilized in the conduction state of the through hole -39 - 201240339 49. Further, the opening surface 492 of each of the through holes 49 on the one main surface 42 side of the susceptor 4 and the opening surface 493 of each of the through holes 49 located on the other main surface 43 side of the susceptor 4 are formed of a resin pattern. 58 (resin material) is sealed and a resin material is filled in each of the through holes 49. Therefore, the inside of the package of the crystal oscillator 1 is not exposed to the outside air through the through holes 49, and the crystal oscillator 10 is The airtightness inside the package is sufficiently maintained. Further, an electrode constituting a part of the first wiring pattern 501 is formed on the internal electrode 55 constituting a part of the second wiring pattern 502 via the resin pattern 58 , and the susceptor 4 has a plurality of wirings in the thickness direction of the susceptor 4 . The susceptor 4 of the crystal oscillator 10 of the fifth embodiment is configured to have an electrode formed on the resin pattern 58 after the formation of the resin pattern 58. The base 4 of the crystal vibrator 1 is manufactured in the same manner. In the configuration of the crystal oscillator 10 of the fifth embodiment, the configuration other than the above is the same as that of the crystal resonator 1 of the first embodiment. The crystal oscillator 1 of the fifth embodiment can be achieved in the first embodiment. The same effect of the crystal vibrator 1. <Embodiment 6> The crystal vibrator 1 of the sixth embodiment has almost the same configuration as the crystal vibrator 1 of the first embodiment. Therefore, only the point different from the crystal oscillator 1 of the first embodiment will be described below. The crystal vibrator 1 of the sixth embodiment is different from the crystal vibrator 1 of the embodiment 1-40-201240339. 29A to 29C are schematic views showing a schematic configuration of a susceptor 4 according to a sixth embodiment, and Fig. 29A is a schematic plan view. Fig. 29B is a view showing a state in which the susceptor 4 is cut along the one-dot chain line of Fig. 29A. A schematic cross-sectional view of the state of the cut surface, and Fig. 29C is a schematic bottom view. As shown in FIGS. 29A to 29C, the resin pattern 58 is not formed on one main surface 42 of the susceptor 4 constituting the bottom surface 461 of the cavity 46, but is formed on the other main surface 43 of the susceptor 4 constituting the back surface of the housing. Specifically, as shown in FIGS. 29A to 29C, the resin pattern 58 is located in the vicinity of the opening surface 493 of the through hole 49 of the other main surface 43 of the susceptor 4 constituting the rear surface of the casing, and the opening surface 493. And the other main surface 43 is formed over the entire area of the region in which the external electrodes 56 (the external terminal electrodes 53, 54) are formed. That is, in the sixth embodiment, the opening surface 49 of the through hole 49 is sealed by the resin pattern 58, and the entire other main surface 43 is covered with the resin pattern 58 or the external electrode 56. Further, in the sixth embodiment, the two through holes 49 formed in the susceptor 4 are compared with the two through holes 49 (see Figs. 2A to 2C) formed in the susceptor 4 of the first embodiment, and are close to each other. Settings. Further, in the sixth embodiment, the inside of the through hole 49 is filled with the resin material 59 used for forming the resin pattern 58. Further, the external electrode 56 has a structure in which the second plating film 533 is further laminated on the sputtering film 561 and the plating film 562 which are made of the same material as the sputtering film 451 and the plating film 452 of the first bonding layer 45. In other words, the sputter film 561 of the external electrode 56 is formed by sputtering a Au film made of Au by a sputtering method on a Mo film made of Mo which is formed by sputtering by a sputtering method. Further, the plating film 562 - 41 - 201240339 is formed by plating an Au film made of Au on the sputtering film 561. Further, the second plating film 563 is formed by plating a metal film on the plating film 562. Specific examples of the metal film constituting the second plating film 563 include an Au film formed on the plating film 526 by electroplating, an AuCu alloy film made of an AuCu alloy plated on the plating film 526, and Or a Ni/Au film formed by forming an Au film on a Ni film formed by plating on the plating film 562. In the manufacturing process shown in Figs. 22A and 22B, the susceptor 4 of the crystal resonator 1 of the sixth embodiment is formed on the opening faces 492, 493 of the both main faces 81, 82 of the wafer 8 and the through holes 49. The resin layer 95 is formed by applying a resin containing a sensitizer by a dip coating method, and the resin material 59 is filled in the through-hole 49. In the manufacturing process shown in FIGS. 23A and 23B, the resin is used. The pattern 58 is formed in the vicinity of the opening surface 493 of the through hole 49 of the other main surface 82 of the wafer 8 and the opening surface 493, and the other main surface 43 is formed with the external electrode 56 (the external terminal electrode 53, 54) In the entire region other than the region other than the region, the second metal layer constituting the second plating film 563 of the external electrode 56 is plated on the metal layer 93 (see FIG. 23B) of the plating film 5 62 constituting the external electrode 56. It is manufactured in the same manner as the susceptor 4 of the crystal vibrator 1 of the first embodiment. In the crystal vibrator 1 of the sixth embodiment, the through electrode 57 is formed on the entire inner surface 491 of the through hole 49. Therefore, the through electrode 75 can be electrically connected to the inside of the main surface 42 of the susceptor 4. The electrode 55 and the external electrode 56 formed on the other main surface 43 of the susceptor 4 stabilize the conduction state inside the through hole 49. Further, since one opening surface 49 3 of the through hole 49 is sealed by the resin pattern 58 (resin material), the resin material 59 is filled in the hole 49 of the through-42-201240339, so there is no crystal. The inside of the package of the vibrator 1 is exposed to the outside air via the through hole 49. The airtightness inside the package of the crystal vibrator 1 is sufficiently maintained. Further, the susceptor 4 of the sixth embodiment is apart from the opening surface 493 of the through hole 49 of the other main surface 43 of the susceptor 4 constituting the rear surface of the casing, and the vicinity of the opening surface 493 to the other main surface 43. The resin pattern 58' is formed over the entire area other than the region where the external electrode 56 (the external terminal electrodes 53, 54) is formed, whereby the contact area of the resin pattern 58 in direct contact with the substrate (glass material) constituting the susceptor 4 can be sufficiently ensured. . Therefore, the bonding strength of the resin pattern 58 to the substrate constituting the susceptor 4 can be sufficiently ensured, and the airtight stability of the package of the crystal resonator 1 can be sufficiently ensured. Further, the susceptor 4 of the sixth embodiment is covered with the entire end portion of the outer peripheral edge of the other main surface 43 by the resin pattern 58. In the same manner as in the first embodiment, when the susceptor 4 of the sixth embodiment is manufactured, the resin pattern 508 is formed in the cut portion of the wafer 8 when the dicing 4 is diced and the susceptor 4 is diced. The cut portion of the wafer 8 is covered with a resin material. As a result, in the manufacture of the susceptor 4 of the sixth embodiment, the occurrence of chips in the wafer (glass material) caused by the dicing is suppressed by coating the resin material of the cut portion of the wafer 8. In the sixth embodiment, the resin material 59 that is filled in the inside of the through hole 49 is the same as the resin material constituting the resin pattern 58, and is not limited to the conductive material, but is not limited thereto. The resin material 59 inside the through hole 49 may not be the same as the resin material constituting the resin pattern 58, and may be a conductive material. When the inside of the through hole 49 is filled with the resin material containing the conductive material, the conduction state of the through hole 49 is more stable. -43-201240339 In the configuration of the crystal vibrator 1 of the sixth embodiment, the configuration other than the above is the same as that of the crystal vibrator 1 of the first embodiment. The crystal vibrator 1 of the sixth embodiment can be achieved and the embodiment. 1 crystal vibrator 1 has the same effect. Further, in the susceptor 4 of the above-described first to sixth embodiments, the resin pattern 58 is formed by photolithography using a photosensitive resin material, but this is a suitable example and is not limited thereto. For example, the resin pattern 58 may be formed by coating a resin material at a position where the resin pattern 58 is formed. That is, in the manufacture of the susceptor 4 of the first to sixth embodiments, the resin pattern 58 is formed by coating on both main faces 81, 82 of the wafer 8 by dip coating or spray coating. After forming the resin layer 95 with a photosensitive resin material (see FIGS. 22A and 22B ), the resin layer 95 is exposed and developed to form a resin pattern 58 (see FIGS. 23A and 23B ), but other methods may be employed. Methods. For example, a method of forming a resin pattern 58 by ejecting a resin by an inkjet method, a screen printing method, or a dispenser method at a position where a resin pattern 58 is formed on both main faces 81, 82 of the wafer 8 can be employed. A method of forming the resin pattern 58. The resin pattern 58 which is not formed by the photolithography method may be formed of a resin material which does not have photosensitivity. Further, the resin containing the conductive material can be filled in the through hole 49 by an inkjet method, a screen printing method, or a dispenser method. Further, in the susceptor 4 of the above-described first to sixth embodiments, the resin material may be interposed between the internal electrode 55, the external electrode 56, and the through electrode 57 and the base of the susceptor 4 (two main faces 42' 43 and through holes) Between the inner side 491 of 49. That is, 'the resin material can be applied to the inner faces of the main faces 81, 82 and the through holes 49 of the wafer 8 before the -44-201240339 forming the metal layer 92 in the manufacturing process shown in FIGS. 14A and 14B. The electrode pads 51, 52, the external terminal electrodes 53, 54 and the portions of the wiring patterns (i.e., the internal electrode 55, the external electrode 56, and the through electrode 57) of 491 form a metal layer 92 on the applied resin material. According to this, since the resin material is interposed between the internal electrode 55, the external electrode 56, and the through electrode 57 and the base material of the susceptor 4, the base material of the susceptor 4 is not provided (for example, it is composed of a glass material). The base material) reacts with the metal constituting each of the electrodes 55, 56, 57 to deteriorate the base material of the susceptor 4. Further, in the manufacture of the susceptor 4 according to the first to fifth embodiments, the process of forming the resin pattern 58 (see FIGS. 23A and 23B) may be performed on the portion of the wafer 8 that is cut when the susceptor 4 is individually divided. A resin pattern 58 is formed on the surface. By forming the resin pattern 58 in the cut portion of the wafer 8 in this manner, it is possible to prevent the side surface of the susceptor 4 or the external terminal electrode 53, 54 from being damaged by the external force applied when the wafer 8 is cut. Further, in the susceptor 4 of the fifth embodiment, at least one of the internal electrode 55 and the external electrode 56 of the susceptor 4 of the above-described first to fourth and sixth embodiments may be formed via a resin pattern (resin material). The electrode is formed so that an electrode constituting a part of the first wiring pattern 510 can be formed on the internal electrode 55 constituting a part of the second wiring pattern 502 via the resin pattern 58. According to this, a plurality of wiring patterns can be provided in the thickness direction of the susceptor 4. Further, in the first to sixth embodiments, glass is used as the material of the susceptor 4 and the lid 6. However, the susceptor 4 and the lid 6 are not limited to those formed by using glass, and may be formed by using crystal. Further, in the first to sixth embodiments, AuSn is mainly used as the bonding material 71, -45-201240339, but the bonding material 71 is not particularly limited as long as the susceptor 4 and the lid 6 can be joined, and for example, it can be used. It is composed of S η alloy brazing material such as CuSn. Further, in the crystal vibrator 1 of the above-described first to fourth and sixth embodiments, and the crystal oscillator 10 of the fifth embodiment, the AT-CUT crystal vibrating piece 2 is used as the crystal vibrating piece, but a tuning fork type may be used. Crystal vibrating piece. The above is an embodiment in which the electronic component package of the present invention is applied to a crystal vibrator or a crystal oscillator. However, in a preferred embodiment, the electronic component package of the present invention is provided by a sealing member disposed oppositely. Seal the electrode of the electronic component, no matter what. Therefore, the electronic component package of the present invention may be an excitation electrode of a piezoelectric vibrating reed which is formed by a piezoelectric material other than crystal, such as lithium molybdate or lithium niobate, by hermetically sealing a sealing member disposed oppositely. The package of the piezoelectric vibration device. The present invention can be embodied in other various forms without departing from the spirit or essential characteristics thereof. Therefore, all the points of the above embodiments are merely illustrative and not limited thereto. The scope of the present invention is expressed by the scope of the patent application, and is not limited in the specification. Variations or modifications of the equivalent scope of the patent application are all within the scope of the invention. Moreover, this application claims priority according to the special offer 20 1 0-4 8099 filed in Japan on March 4, 2010. All of the contents are incorporated in the present application. [Industrial Applicability] The present invention is applicable to the encapsulation of electronic components of electrodes of the electronic component element -46-201240339 of a hermetic sealing piezoelectric vibrating piece. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing the internal space of a crystal vibrator according to the first embodiment, and the crystal vibrator is cut along the one-dot chain line of the susceptor shown in Fig. 2A. Slightly sectional view. Fig. 2A is a schematic plan view of the susceptor of the first embodiment. Fig. 2B is a schematic cross-sectional view showing the susceptor of the first embodiment, and a schematic cross-sectional view of the susceptor taken along the one-dot chain line of Fig. 2A. Fig. 2C is a schematic bottom plan view of the susceptor of the first embodiment; Fig. 3A is a schematic cross-sectional view of the cap of the first embodiment. Fig. 3B is a schematic bottom plan view of the cap of the first embodiment. Fig. 4 is a schematic bottom plan view of the crystal resonator element of the first embodiment; Fig. 5A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment. Fig. 5B is a schematic view showing a process of cutting the wafer shown in Fig. 5A along a one-dot chain line of Fig. 5A. Sectional view. Fig. 6A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment; Fig. 6B is a schematic cross-sectional view showing the wafer shown in Fig. 6A taken along the one-dot chain line of Fig. 6A. Fig. 7A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment. Fig. 7B is a schematic cross-sectional view showing the wafer -47 - 201240339 shown in Fig. 7A taken along the one-dot chain line of Fig. 7A. Fig. 8A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor according to the first embodiment; Fig. 8B is a schematic cross-sectional view showing the wafer shown in Fig. 8A taken along the one-dot chain line of Fig. 8A. Fig. 9A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment. Fig. 9B is a schematic cross-sectional view showing the wafer shown in Fig. 9A cut along the one-dot chain line of Fig. 9A. Fig. 10A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 10B is a schematic cross-sectional view showing the crystal circle shown in Fig. 10A taken along the one-dot chain line of Fig. 10A. Fig. 11A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment. Fig. 11B is a schematic cross-sectional view showing the crystal circle shown in Fig. 11A cut along the one-dot chain line of Fig. 11A. Fig. 12A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 12B is a schematic cross-sectional view showing the crystal circle shown in Fig. 12A taken along the one-dot chain line of Fig. 12A. Fig. 13A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment; Fig. 13B is a schematic cross-sectional view showing the crystal of -48 - 201240339 circle shown in Fig. 13A taken along the one-dot chain line of Fig. 13A. Fig. 14A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 14B is a schematic cross-sectional view showing the crystal circle shown in Fig. 14A taken along the one-dot chain line of Fig. 14A. Fig. 15A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 15B is a schematic cross-sectional view showing the crystal circle shown in Fig. 15A taken along the one-dot chain line of Fig. 15A. Fig. 16A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 16B is a schematic cross-sectional view showing the crystal circle shown in Fig. 16A taken along the one-dot chain line of Fig. 16A. Fig. 17A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 17B is a schematic cross-sectional view showing the crystal circle shown in Fig. 17A taken along the one-dot chain line of Fig. 17A. Fig. 18A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 18B is a schematic cross-sectional view showing the crystal circle shown in Fig. 18A taken along the one-dot chain line of Fig. 18A. Fig. 19 A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment. Fig. 19B is a schematic cross-sectional view showing the crystal of -49 - 201240339 circle shown in Fig. 19A taken along the one-dot chain line of Fig. 19A. Fig. 20A is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment; Fig. 20B is a schematic cross-sectional view showing the crystal circle shown in Fig. 20A taken along the one-dot chain line of Fig. 20A. Fig. 21 is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment. Fig. 21A is a schematic cross-sectional view showing the crystal circle shown in Fig. 21A taken along a chain line of Fig. 21A. Fig. 22 is a schematic plan view showing a part of a wafer showing one of the manufacturing processes of the susceptor of the first embodiment. Fig. 22B is a schematic cross-sectional view showing the crystal circle shown in Fig. 22A taken along the one-dot chain line of Fig. 22A. Fig. 23A is a schematic plan view showing a part of a wafer showing a process of manufacturing a susceptor according to the first embodiment; Fig. 23B is a schematic cross-sectional view showing the crystal circle shown in Fig. 23A taken along the one-dot chain line of Fig. 23A. Fig. 24A is a schematic plan view of a susceptor according to a second embodiment. Fig. 24B is a schematic cross-sectional view showing a susceptor according to a second embodiment, and a schematic cross-sectional view of the susceptor taken along a one-dot chain line of Fig. 24A. Fig. 24C is a schematic bottom plan view of the susceptor of the second embodiment; Fig. 25A is a schematic cross-sectional view of a susceptor according to a third embodiment. Fig. 25B is a schematic cross-sectional view showing a susceptor according to a third embodiment, and a schematic cross-sectional view of the susceptor taken along the one-dot chain line of Fig. 25A. -50-201240339 Fig. 25C is a schematic bottom plan view of the susceptor of the third embodiment. Fig. 26A is a schematic cross-sectional view of a susceptor according to a fourth embodiment. Fig. 26B is a schematic cross-sectional view of the susceptor according to the fourth embodiment, and a schematic cross-sectional view of the susceptor taken along the one-dot chain line of Fig. 26A. Figure 26C is a schematic bottom plan view of the susceptor of the fourth embodiment. Fig. 27 is a schematic side view showing the internal space of the crystal oscillator of the fifth embodiment. Figure 28A is a schematic plan view of a susceptor according to a fifth embodiment. Figure 28B is a schematic bottom plan view of the susceptor of the fifth embodiment. Fig. 29A is a schematic cross-sectional view of a susceptor according to a sixth embodiment. Fig. 29B is a schematic cross-sectional view of the susceptor according to the sixth embodiment, and a schematic cross-sectional view of the susceptor taken along the one-dot chain line of Fig. 29A. Figure 29C is a schematic bottom plan view of the susceptor of the sixth embodiment. [Description of main component symbols] 1 : Crystal vibrator 11 : Internal space 2 : Crystal vibrating piece 21 : Substrate 22 , 23 : Main surface 24 : Short side central portion 26 : Vibrating portion 27 : Junction portion 31 ' 32 : Excitation electrode -51 - 201240339 33,34 : Terminal electrode 35, 36: Pull-out electrode 4: Base (sealing member for electronic component encapsulation of the first sealing member) 41 : Bottom 41 1,412 : pedestal portion 42 : main surface (pair Face: 43: Main surface 44: Wall portion 45, 45A: First bonding layer 451, 453: Sputtered film 452, 454: Plating film 46: Cavity 461: Bottom surface 47, 48: Castle 47A, 47B > 48A > 48B: Castle 4 9 : through hole 4 9 1 : inner side surface 492, 493: opening surface 5 1,5 2 : electrode pad 53 , 54 : external terminal electrode 53A > 53B, 54A - 54B : external terminal electrode 5 5 : Internal electrode 5 6 : External electrode 5 6 1 : Sputtered film - 52 - 201240339 562 : Plating film 563 : Second plating film 57 : Through electrode 5 8 : Resin pattern 59 : Resin material 6 : Cover (2nd Sealing member) 61: second bonding layer 6 1 1 : Mo film 612 : Au film 71 : bonding material 7 11 : An/Sn film 712 : Au film 8 : wafer 8 1, 82 : main surface 91 : Retaining layer 92: metal layer 93: plating layer 94: positive photoresist layer 9 5 : resin layer 1 〇: crystal oscillator (electronic component package) 2 0 : IC chip (electronic component) 401 : pedestal 5 0 1 : 1 wiring pattern 5 0 2 : second wiring pattern - 53 - 201240339 5 03 : third wiring pattern 906, 907: conductive bump L1 : side L2 along the short side direction, L3 : side along the long side direction -54-