[go: up one dir, main page]

TW201246553A - Insulate layer material for light and heat energy cross-linking organic thin film transistor - Google Patents

Insulate layer material for light and heat energy cross-linking organic thin film transistor Download PDF

Info

Publication number
TW201246553A
TW201246553A TW101103740A TW101103740A TW201246553A TW 201246553 A TW201246553 A TW 201246553A TW 101103740 A TW101103740 A TW 101103740A TW 101103740 A TW101103740 A TW 101103740A TW 201246553 A TW201246553 A TW 201246553A
Authority
TW
Taiwan
Prior art keywords
group
thin film
insulating layer
film transistor
organic thin
Prior art date
Application number
TW101103740A
Other languages
English (en)
Chinese (zh)
Inventor
Isao Yahagi
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of TW201246553A publication Critical patent/TW201246553A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
    • C08G2261/3243—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
    • C08G2261/3246—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing nitrogen and sulfur as heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/40—Polymerisation processes
    • C08G2261/41—Organometallic coupling reactions
    • C08G2261/411—Suzuki reactions
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/92—TFT applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electroluminescent Light Sources (AREA)
TW101103740A 2011-02-07 2012-02-06 Insulate layer material for light and heat energy cross-linking organic thin film transistor TW201246553A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011023926A JP2012164805A (ja) 2011-02-07 2011-02-07 光及び熱エネルギー架橋性有機薄膜トランジスタ絶縁層材料

Publications (1)

Publication Number Publication Date
TW201246553A true TW201246553A (en) 2012-11-16

Family

ID=46638542

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101103740A TW201246553A (en) 2011-02-07 2012-02-06 Insulate layer material for light and heat energy cross-linking organic thin film transistor

Country Status (3)

Country Link
JP (1) JP2012164805A (fr)
TW (1) TW201246553A (fr)
WO (1) WO2012108326A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6296701B2 (ja) 2012-10-15 2018-03-20 住友化学株式会社 電子デバイスの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090004969A (ko) * 2006-03-29 2009-01-12 스미토모 베이클리트 컴퍼니 리미티드 수지 조성물, 바니시, 수지막 및 그것을 이용한 반도체 장치
JP5194503B2 (ja) * 2006-04-12 2013-05-08 住友ベークライト株式会社 樹脂膜の製造方法、樹脂膜及び半導体装置
US8207524B2 (en) * 2006-08-04 2012-06-26 Mitsubishi Chemical Corporation Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol
KR101572296B1 (ko) * 2008-08-28 2015-11-26 스미또모 가가꾸 가부시키가이샤 수지 조성물, 게이트 절연층 및 유기 박막 트랜지스터

Also Published As

Publication number Publication date
JP2012164805A (ja) 2012-08-30
WO2012108326A1 (fr) 2012-08-16

Similar Documents

Publication Publication Date Title
CN102138218B (zh) 树脂组合物、栅极绝缘层和有机薄膜晶体管
JP5695467B2 (ja) 有機薄膜トランジスタ絶縁層用樹脂組成物、オーバーコート絶縁層及び有機薄膜トランジスタ
JP5666251B2 (ja) 光及び熱エネルギー架橋性有機薄膜トランジスタ絶縁層材料
TWI547504B (zh) 有機薄膜電晶體絕緣層材料
TW201302810A (zh) 光及熱能交聯性有機薄膜電晶體絕緣層材料
CN104137236B (zh) 电子器件绝缘层及电子器件绝缘层的制造方法
CN104040700B (zh) 电子器件绝缘层材料及电子器件
TW201209092A (en) Composition for organic thin film transistor insulation layer containing fluoro-organic compound
TW201035123A (en) Resin composition for insulation layer
CN102484141A (zh) 光交联性有机薄膜晶体管绝缘层材料
TW201239046A (en) Optical and thermal energy crosslinkable material for organic thin film transistor insulation layer
TW201246553A (en) Insulate layer material for light and heat energy cross-linking organic thin film transistor
TW201223979A (en) Insulation layer material for organic thin film transistor and organic thin film transistor
JP6056443B2 (ja) 絶縁層材料及び該絶縁層材料を用いて形成した有機薄膜トランジスタ
JP2013125902A (ja) 有機薄膜トランジスタ絶縁層材料及び有機薄膜トランジスタ
JP6056426B2 (ja) 有機薄膜トランジスタ絶縁層材料及び有機薄膜トランジスタ
JP2013258301A (ja) 有機薄膜トランジスタ絶縁層材料
TW201323452A (zh) 有機薄膜電晶體絕緣層材料
JP2013064095A (ja) 有機薄膜トランジスタ絶縁層材料
JP2010037462A (ja) ゲート絶縁層用樹脂組成物
JP2014175639A (ja) 有機素子材料