塗布料件之裝置及方法， 產生各種塗料之電漿，用 面上。在工具、儀器、電 品的塗布與硬化中，可不 201233830 六、發明說明： 【發明所屬之技術領域】 本發明關於一種用於 是關於一種裝置，該裝置 積在將被塗布之料件的表 件、含手錶及眼鏡等之物 地使用此塗布裝置。 【先前技術】 已知有各種方法及裝置用以塗布及硬化料件。 之物理氣相沉積（PVD)法使用陰極及陽極。陰極與陽 間之電場的施加將來自陰極之材料蒸發，其形成可 偏折及過濾之粒束以傳達到安置待塗布料件之真空 室。來自陽極之被蒸發的材料係沉積在沉積室中之 上’違料件係彳盾序地塗布有此材料。 US6663755中說明使用金屬過濾式電弧離子 PVD設備的範例。為了增加沉積速率，此裝置使用 電漿源，s玄等電漿源產生朝向同—沉積室之兩電漿 因該兩個源係朝向彼此，須導電遮護作為擋板，用 止由一電漿源所產生之電漿流傳達到另一電漿源。 板增加設備之成本及體積’且需週期性地加以清洗 至更換。而且，可增進過濾之品質；相異尺寸之離 傳達到標的，產生不均勻之塗布。 在 W02007089216 及 WO2007 136777 中揭露以 過濾式電弧離子源供塗布料件用的類似設備。 雷射剝蝕設備亦已被使用於塗布料件；其大致 尤其 於沉 子組 受限 習知 極之 加以 沉積 料件 源之 兩個 流。 以防 此播 或甚 子粒 金屬 利用 -4 - 201233830 朝向如一團碳料之待剝蝕材 刊针之脈衝式雷射源。該 脈衝產生材料之制姓，兮· ?汁之別蝕.°亥材料被投射且可能被偏折 沉積室中之料件。 US5747120中說明雷射剥姓設備之範例。在此 中，正好將被以雷射剝蝕之標的安置在室中。此種 使標的之更換變得困難’尤其是，若室維持在真* :。而且’待塗布之料件係在主室之外部被安置： 2：，使得僅能同時塗布有限數量之料件。 US6372103中揭露另一雷射剝蝕系統，在此 中’在沉積室外部之雷射產生雷射束，其越過窗且 到在沉積室中旋轉之圓柱形標的。同樣的，該標的 換需要開啟整個沉積室’若該室係在真空情況下， 時且昂貴。而且，雷射束與旋轉標的之表面成直角 得經剝蝕材料之至少一部分抵靠著窗而彈跳，該窗 側迅速被遮覆且需清洗以保持其透明度。 US623 19 56中揭露用於碳沉積之雷射電弧系統 它範例。 某些料件需要具有相異材料之異層的精緻塗層 製造製程向來利用在相異沉積室中所執行之相異I 以便連續沉積該專相異層。此為一種昂貴之方法 需要具有相關真空產生設備等之多個沉積室。 需將料件自一個沉積室轉移至下個沉積室，故減低 產量；在各次轉移後常需重新產生真空。 "" W02008015016說明用以塗布具有如鑽石的層 板的裝置。其中相異型式之相異塗布設備係配置2 雷射 朝向 文件 安置 情況 —小 文件 傳達 之更 會耗 ，使 之内 之其 ，該 驟， 因其 ，因 製造 之基 朝向 -5- 室中對齊。此允許在單一批二欠 且不需在以相異型式之源設備 開啟沉積室。 W02008015016中所說明設備 換整個裝置下，塗布及製造具 於塗布料件之設備達成此等目 ;以及複數個塗布設備，係用 該沉積室， 少一者為金屬過濾式（或非過 少一其它者為雷射剝蝕源， 少兩者係透過連接凸緣可拆卸 者為相同，使得可將—個設備 異位置。 之相異源設備連接至共通沉積 利的’因其允許易於以任—其 種型式的一個塗布設備。圍繞 可完全互換。例如’—個料件 狐離子源設備供金屬沉積及 ，而另一料件將使用兩個金屬 —個層之較快速沉積，或者供 201233830 共通之沉積室或各在個別 製程中大量料件之塗布， 之在兩相異層的沉積之間 本發明之目標在增加 及方法的彈性。 另一目標在允許未更 有相異層之相異料件。 【發明内容】 依據本發明，藉由用 標，該設備包括：沉積室 以同時或連續提供塗料給 其中該塗布設備之至 濾式）電弧離子源， 其中該塗布設備之至 其中該塗布設備之至 式地連接至該沉積室， 其中該凸緣之至少兩 裝設在圍繞該沉積室的相 使用用以將相異型式 室的類似或相同凸緣是有 它型式之塗布設備更換— 共通室之塗布設備因此係 可需要一個金屬過濾式電 一個雷射剝蝕源供碳沉積 過濾式電弧離子源設備供 •6- 201233830 兩相異金屬在兩連 對於相異設裔 者，但凸緣之每一 換且無法裝設在任 依據可能為獨 置包括：沉積室、 一個金屬過渡式電 個陰極、至少一個 兩個源之放射方向 小於175。之角 料的風險，且去除 兩個源之放射方向 雨個源之間具有大 允許重大偏折角朝 過濾。 在一個實施例 一平面上。此允許 均質之塗布。 金屬離子源較 雨個聚焦線圈。共 圈被由金屬離子源 過；及位在該金屬 同用以將該金屬離 數目之線圈作有效 依據可能為獨 續層中之沉積。 t具有類似凸緣之習知裝置可為現有 者仍明確地配合特定設備，其不可互 一位置或任一凸緣上。 立觀點之另一者，用於塗布料件之裝 以及具有至少一對金屬離子源的至少 弧離子源，各金屬離子源具有至少— 陽極及相關聯線圈，其中各該對中之 之間的角度大於90。但小於175。。 度避免各源在另一源之方向中放射材 兩個源之間遮護之需求。各該對中之 之間的角度可大於9 0。但小於1 3 5。。 於90。，且較佳是小於135。之角度， 向待塗布之料件’且確保流量之有效 中，各對中兩個源之放射方向未在同 沉積室中兩種流量之較佳散布，及更 是各包括用以將金屬離子束聚焦之^ k偏折系統包括一個第一線圈，該線 、之每—土 —者所產生的金屬離子束所通 子源後之一個第二線圈，兩線圈協 束朝該沉積室偏折。此 以有限 率之偏折。 立觀點之另一者，用於塗布料件之裝 201233830 置匕括.具有雷射之雷射剝触設備；用以將由 產生之雷射束朝標的偏折的鏡子； ;:二射所 -馬達；以及用以偏移該鏡子以便 ：:广的之第A device and method for coating a material to produce a plasma of various coatings on the surface. In the coating and hardening of tools, instruments, and electric appliances, it is not possible to use 201233830. 6. Description of the Invention: The present invention relates to a device for relating to a device that is to be coated on a material to be coated. This coating device is used for things including watches and glasses. [Prior Art] Various methods and devices are known for coating and hardening a material. The physical vapor deposition (PVD) method uses a cathode and an anode. The application of the electric field between the cathode and the anode evaporates the material from the cathode, which forms a deflectable and filtered beam of particles for communication to the vacuum chamber in which the material to be coated is placed. The evaporated material from the anode is deposited on top of the deposition chamber. The material is coated with this material. An example of the use of a metal filtered arc ion PVD apparatus is described in US 6,663,755. In order to increase the deposition rate, the device uses a plasma source, and the smectic plasma source generates two plasmas facing the same-depositing chamber. Since the two source systems are facing each other, the conductive shielding is used as a baffle. The plasma stream produced by the slurry source is communicated to another plasma source. The board adds cost and volume to the equipment' and needs to be periodically cleaned to replace. Moreover, the quality of the filtration can be enhanced; the separation of the different dimensions is conveyed to the target, resulting in uneven coating. A similar apparatus for coating a material for a filtered arc ion source is disclosed in WO2007089216 and WO2007 136777. Laser ablation equipment has also been used for coated materials; it is generally more than two streams of deposited material sources that are limited by the Shenzi group. In case of this broadcast or even grain metal utilization -4 - 201233830 Oriented to a pulsed laser source of a carbonaceous material to be ablated. The pulse produces the material's last name, and the material is projected and may be deflected into the material in the deposition chamber. An example of a laser stripping device is described in US Pat. No. 5,747,120. In this case, it will be placed in the room just by the target of laser ablation. This makes it difficult to replace the target', especially if the room is maintained at true *:. Moreover, the material to be coated is placed outside the main chamber: 2: so that only a limited number of pieces can be coated at the same time. Another laser ablation system is disclosed in U.S. Patent 6,372,103, in which a laser outside the deposition chamber produces a laser beam that passes over the window and onto a cylindrical target that rotates in the deposition chamber. Similarly, the target change requires opening the entire deposition chamber' if the chamber is under vacuum and is expensive. Moreover, the laser beam is at right angles to the surface of the rotating target such that at least a portion of the ablated material bounces against the window, the window side being quickly covered and cleaned to maintain its transparency. A laser arc system for carbon deposition is disclosed in US623 19 56. Some materials require a delicate coating with a different layer of dissimilar materials. The manufacturing process has historically utilized the disparity I performed in the dissimilar deposition chambers to continuously deposit the inter-layer. This is an expensive method requiring multiple deposition chambers with associated vacuum generating equipment and the like. It is necessary to transfer the material from one deposition chamber to the next, thus reducing the yield; it is often necessary to regenerate the vacuum after each transfer. "" W02008015016 describes a device for coating a laminate having, for example, a diamond. Among them, the different types of dissimilar coating equipment are configured 2 lasers to face the file placement situation - the small file conveys more consumption, so that it is due to it, because the manufacturing base is aligned in the -5-room . This allows for a single batch of two to owe and does not require the deposition chamber to be turned on in a different type of source device. The device described in W02008015016 replaces the entire device, coating and manufacturing the device with the coated material to achieve such a goal; and a plurality of coating devices, the deposition chamber is used, one of which is metal-filtered (or not too little one other) The laser is the source of the laser ablation, and the two are detachable through the connecting flange, so that the device can be dislocated. The heterogeneous device is connected to the common deposit, because it allows easy to take any One type of coating equipment. The surrounding can be completely interchangeable. For example, 'one material fox ion source device for metal deposition and the other material will use two metals - one layer for faster deposition, or for 201233830 common The deposition chamber or the coating of a large number of parts in individual processes, the object of the invention is to increase the elasticity of the method between the deposition of the two-phase layers. Another object is to allow the dissimilar material to be dissimilar. SUMMARY OF THE INVENTION According to the present invention, by means of a standard, the apparatus comprises: a deposition chamber for simultaneously or continuously providing a coating to a filter ion source of the coating apparatus Wherein the coating apparatus is to which the coating apparatus is connected to the deposition chamber, wherein at least two of the flanges are disposed in a phase surrounding the deposition chamber for similar or identical convexities of the different types of chambers The edge is the coating equipment replacement of its type - the coating equipment of the common chamber can therefore require a metal filter type electric laser ablation source for carbon deposition filter arc ion source equipment for supply 6-201233830 two-phase dissimilar metal in two companies For those who are different from each other, but each of the flanges cannot be installed and may be left alone. The deposition chamber, a metal transitional electric cathode, and at least one of the two sources have a radiation direction of less than 175. The risk of the corner material, and the radiation direction of the two sources is removed. The source between the rain sources has a large allowable deflection angle toward the filter. In one embodiment, a plane. This allows for homogeneous coating. The metal ion source is rainier than the focus coil. The co-circle is sourced from a metal ion; and the presence of the metal in the same number of coils as the metal may be used as a basis for deposition in the continuum. Conventional devices having a similar flange may still be specifically adapted to the particular device by the prior art, either in a non-reciprocal position or on either flange. Another of the standpoints for coating a material package and at least an arc ion source having at least one pair of metal ion sources, each metal ion source having at least an anode and an associated coil, wherein between each pair The angle is greater than 90. But less than 175. . To avoid the need for each source to be shielded between the two sources of radioactive material in the direction of the other source. The angle between each pair can be greater than 90. But less than 1 3 5 . . At 90. And preferably less than 135. From the perspective of the material to be coated and ensuring the effectiveness of the flow, the radiation directions of the two sources in each pair are not in the same flow rate in the same deposition chamber, and more preferably include metal ions. The beam focusing system includes a first coil, and the wire, the metal ion beam generated by the metal ion beam is passed through a second coil, and the two coils are deflected toward the deposition chamber. . This is a finite rate of deflection. The other of the viewpoints, for the coating of materials, 201233830. The laser-peeling device with laser; the mirror for deflecting the generated laser beam toward the target; ;: two-shot house - Motor; and to offset the mirror so that:
位的第一馬達。可使用第二 相異。P 行於標的旋轉軸之軸，相 係〜者平 相對於，該雷射束偏移標 及第二馬達允許使用非常 一 蝕相異料件，且增加連續f I 、·賣也剝 逆々更換標的之間的期間。 依據可能為獨立觀點之另一 力者，用於塗布料件之捉 置包括雷射剝餘設備’其中導引 、 ^ Λ 甲導引雷射束，以便與標的形The first motor of the bit. A second difference can be used. P is on the axis of the target rotation axis, the phase is relatively flat, and the laser beam offset and the second motor allow the use of a very eclipse dissimilar material, and increase the continuous f I , sell and peel Replace the period between the targets. According to another person who may be independent, the use of the coating material includes a laser stripping device' in which the guide beam is guided, and the laser beam is guided to the target shape.
成一角度，S玄角度小於雷射+ l U 由耵果與私的之切線之間 度。此減低經剝姓之材料跳^^ λ π咖 啊讨跳向入口窗之風險，且取消、生 洗此窗之要求。 月 使用兩個雷射之一個源設備供剝蝕同一標的，或供 剝餘兩個相異標的可達成較快速之塗布。 八 【實施方式】 —藉助於實施例之說明將更加了解本發明，該說明係 藉由範例且由表示本發明之裝置之截面圖的第1圖所例 示。 第1圖表示依據本發明之裝置，其具有單一沉積室 1。將如基板、鑽孔、機械料件等之待塗布的料件（未示 出）安置在沉積室1中之一個或數個料件托座上。取決於 用途，可使用真空產生系統（未示出），對沉積室i施加 真空。 沉積室1包括複數個連接凸緣10，用以連接各種塗 布設備。在本文件中’「塗布設備」之表示大致指稱可作 201233830 為源用’肖以產生被導向沉積室！之材料流以便塗布室 中料件的設備。依據本發明之觀點’至少兩個連接凸緣 iO為相_至 >相容’使得可將—個設備等同地連接至 一個凸緣或另一者。 在所例示之範例巾，儘管可使用兩個以上之凸緣， 沉積室1具兩個相同之連接凸緣1Q。該等凸緣較佳是真 空凸緣。形式為金屬過濾式電弧離子源2之第一塗布設 備係連接至連接凸緣1 0之一者， ^ 香而形式為雷射剝蝕源3 之第二塗布設備係連接至所圖示範例之另一連接凸緣 1〇。因該裝置具有兩個相容之連接凸緣1〇，在盆它配置 中亦可能將相異型式之設備裝設在同-沉積室卜例如： •:―型式之兩個以上的金屬過渡式電弧離子 源，用於較快速及/或更均質之金 •柏s _ a J貝 < 备屬塗布的沉積； 源，、、式之兩個以上的金屬過濾式電弧離子 • 了，用U塗布具有兩層相異金屬之料件； 於軔&^ ;由射到蝕源，以此製程用 、較快逮或更均質之材料的沉積（如碳），· 目異型式之兩個以上的雷射剝蝕源，用以 有兩層相異材料之料件； ”布〃 ·:上：量離子錄5’例如，依據霍爾㈣〇 由使：便以離子束抛光料件或《便藉 植入，使表面硬化； •-個以上之磁控管，其可為平衡 φ —個以上之Γνη时从 卜卞銜式， 件；之㈣益件，如電聚增強式之_器 "9 - 201233830 鲁一個以上之加熱或冷卻器件； *或其任何組合。 所有彼等設備具有相同凸緣且可以互換式地被裝設 在裝置之相異凸緣的任一者上。 在較佳實施例中，使用設備之一者於如金屬層之子 層的’几積，而使用另一設備於如硬碳或dlc層之外層的 ’儿積。因此可能以單一設備’將各種連續層沉積在同一 料件之表面上， 。因此建議或銷售套裝之單一室，該套裝包括各種 塗布設備，JL Φ盔^ Α ，、中為了配合使用者之需要及相異料件之各 種塗布要求，你用士_ π、时π 種對等位置。 選擇且裝設在圍繞沉積室1之各 借&在Α半1^况中’將-個接-個地使用相異之塗 布目又備’以便將塗料 聂 嗟置層連續塗布在單一料件上， 系二衣程亦可能同拉你 積势栽…兩個設備’例如，《了加速沉 料來混合束且沉積層之兩：…來自相異源之混合材 備的#用> Μ積層之兩個相異設備。而且，若在各設 W的使用之間更拖 相里之H < 、 之料件，則在相異製程中可使用 ，、之塗布设備於塗布相異料件。 依據本發明之— 離子源2勺紅^ ,個嬈點，至少—個金屬過濾式電弧 '、 匕括兩個相異全屈Μ工％ δ 在塗布料件時增力mi子源兩個源的使用， 電漿的均質性一士 增進形成於沉積室1中之 製或將為塗布用快且更規律之塗布。各源具金屬 個陽極以，在啟動所製的一個陰極20 ’及一個或數 至少—個電流源時產生電弧放電，以 201233830 便自陰極抽取材料。 陰極較佳是具具錐形以便在運轉期間使沉積均質 化。在表面陰極被腐蝕，使得其離標的之距離增加時， 由於錐形之故，其表面增大，使得沉積速率維持大致固 定。 偏折系統包括兩個線圈23、24 ’其就在陰極2〇後 圍繞部分之導管。使用線圈23、24將沿陰極2〇之軸2〇〇 抽取自陰極20之粒子流聚焦，且針對導管之側壁降低分 散。 _ 各陰極20之軸200與導入沉積室}内之軸1〇〇成角 度α，其亦為凸緣1〇之中心軸。因此需將所放射之粒子 束自初始之放射方向100偏折至導入沉積室ι内之方 向。此偏折係由圍繞在連接凸緣丨〇所裝設之至少一個第 一偏折線圈27所產生，以便為在其導入沉積室i内之前 的偏折束所越過。設置於金屬離子源28後之另一選用線 圈25與線圈27協同用以將該金屬離子束朝該沉積室偏 折。彼等線圈25及27較佳是各具圓柱形或環形曲面形， 其有一軸對應於連接凸緣1〇之軸且對應於導入軸1〇〇。 此偏折作為過濾手段，用以自重量異於理想重量均值 粒子過滤中性粒子’其未在相異方向令分別被偏折。 束所越過之金相29係維持在變化之電位，用以捕捉 相異重量之離子。 第一線圈26較佳係配 27 ’以便為偏折束所越過。 一側之另一線圈3 8協同，以 置為接近且平行於第—線圈 此第二線圈與位在沉積室另 便控制由沉積室中之電弧離At an angle, the S-thin angle is less than the laser + l U from the tangent between the fruit and the private. This reduces the risk of the stripped surname material jumping ^^ λ π coffee, and the risk of jumping to the entrance window, and canceling and washing the window. Months Use one source device of two lasers to ablate the same target, or to strip two different phases to achieve faster coating. [Embodiment] The present invention will be better understood by the description of the embodiments, which are illustrated by way of example and by the first drawing of the section showing the apparatus of the present invention. Figure 1 shows a device according to the invention having a single deposition chamber 1. A material to be coated (not shown) such as a substrate, a drilled hole, a mechanical part or the like is placed on one or several material holders in the deposition chamber 1. Depending on the application, a vacuum can be applied to the deposition chamber i using a vacuum generating system (not shown). The deposition chamber 1 includes a plurality of attachment flanges 10 for attaching various coating equipment. In this document, the expression "coating equipment" is generally used to refer to 201233830 as the source to create a guided deposition chamber! The material flow is used to coat the equipment in the chamber. According to the present invention, at least two of the connecting flanges iO are phase_to >compatible so that one device can be equally connected to one flange or the other. In the exemplary towel exemplified, the deposition chamber 1 has two identical connecting flanges 1Q, although more than two flanges can be used. The flanges are preferably vacuum flanges. The first coating apparatus in the form of a metal filtered arc ion source 2 is coupled to one of the connection flanges 10, and the second coating apparatus in the form of a laser ablation source 3 is coupled to the other illustrated example A connecting flange 1〇. Since the device has two compatible connecting flanges, it is also possible to install different types of equipment in the same-depositing chamber in the configuration of the basin. For example: •: Two or more metal transitions of the type Arc ion source for faster and/or more homogeneous gold cypress s a _ a J shell < coated coating; source, , or more than two metal filter arc ions Coating a material having two layers of dissimilar metals; 轫 amp amp ; 由 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 由 射 射The above laser ablation source is used for materials with two layers of different materials; "布〃 ·:上:量离子录5', for example, according to Hall (four) 〇 by: ion beam polishing material or " The surface is hardened by implantation; • more than one magnetron, which can balance φ—more than Γνη from the 卞 卞 , 件 件 件 ; ; ; ; ; ; ; ; ; ; ; ; ; ; 四 四 四 四 & 四 & & & & & & & & & 9 - 201233830 More than one heating or cooling device; * or any combination thereof. All of them have the same And may be interchangeably mounted on any of the distinct flanges of the device. In a preferred embodiment, one of the devices is used in a sub-layer such as a metal layer, and another device is used. For a layer such as a hard carbon or a layer of dlc. It is therefore possible to deposit various continuous layers on the surface of the same part in a single device. Therefore, it is recommended or sold a single chamber of the kit, which includes various coating equipment. JL Φ Helmets ^ Α , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , In the case of Α 1 ^ ' ' 个 个 个 个 个 个 个 个 个 个 个 个 个 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便 以便Potential planting... two devices', for example, "accelerated sinking to mix the bundle and two of the sedimentary layers: ... from the mixed materials of the different sources, the two different devices of the grading layer. And, if H < in the use of each set of W, the material is different The coating device can be used in the process of coating the phase dissimilar material. According to the invention - the ion source is 2 scoops of red ^, one defect, at least one metal filter arc ', including two different full flex Μ%% δ The use of two sources of energizing the mi source when coating the material, the homogeneity of the plasma is enhanced by the formation in the deposition chamber 1 or it will be applied faster and more regularly for coating. A metal anode is used to generate an arc discharge when a cathode 20' and one or at least one current source are fabricated, and the material is extracted from the cathode at 201233830. The cathode is preferably tapered to allow operation during operation. The deposition is homogenized. When the surface cathode is etched such that its distance from the target increases, the surface increases due to the taper, so that the deposition rate remains substantially constant. The deflection system includes two coils 23, 24' which are conduits that surround the portion just after the cathode 2 turns. The flow of particles extracted from the cathode 2 轴 2 along the axis 2 of the cathode 2 is focused using coils 23, 24, and the dispersion is reduced for the sidewalls of the conduit. The shaft 200 of each cathode 20 is at an angle α with the axis 1 introduced into the deposition chamber}, which is also the central axis of the flange 1〇. Therefore, it is necessary to deflect the emitted particle beam from the initial radial direction 100 to the direction of introduction into the deposition chamber ι. This deflection is produced by at least one first deflection coil 27 mounted around the attachment flange 越 to be passed over the deflected bundle before it is introduced into the deposition chamber i. Another optional coil 25 disposed after the metal ion source 28 cooperates with the coil 27 to deflect the metal ion beam toward the deposition chamber. Preferably, the coils 25 and 27 have cylindrical or toroidal curved shapes each having an axis corresponding to the axis of the connecting flange 1 且 and corresponding to the introduction shaft 1 〇〇. This deflection is used as a filtering means for self-weighting from the ideal weight average particle-filtering neutral particles 'which are not deflected separately in the dissimilar direction. The metallurgical 29 system that the beam passes over is maintained at a changing potential to capture ions of different weights. The first coil 26 is preferably mated 27' so as to be crossed by the deflecting bundle. The other coil 38 on one side cooperates to be placed close to and parallel to the first coil. This second coil and the position in the deposition chamber additionally control the arc separation in the deposition chamber.
S 201233830 子源2或雷射剝蝕源3所吝 j所產生之粒子雲且使其均質化。 α角較佳是小於1 3 5 〇， β 更佳疋小於120。，以提供足 夠的偏折及足夠的過滹。缺 應、然而，依據本發明與所有其它 硯點無關之觀點，此角声t +认ηΛ。 两度亦大於90。，較佳是大於95。， 以避免兩個金屬過濾式電狐 、€弧離子源2之軸2〇〇係對準且 其中將由一個源所產生之走藤 —果導向另一個源的情況。此特 疋配置避免在兩束之間的交 點^要任何遮護或擋板元 件，因此造成較簡單及更小 ^ α 丄 J )之6又计，其亦易於清洗。 而且，因為該束並未對準’所以此設 及空間擴散，因此造成室 束之混σ 〜 成至1中杻子之更均質分布。 在較佳貫施例中，兩個仓屬 m l ν 金屬離子源28之軸2〇〇未在 千面上，但部在兩平行或 -,, 1〜心十面上，#俱哈 了沁兩不同方向外，且沿妓 ’、 束導入竹藉〜u /、通之導官’將來自源28之兩 中。此有用於在垂直於圖的平面之η 中増進粒子之分布，且在塗布時 ^ + 曰進化成於沉積室1中 之電衆的均質性，因此，造成增進之塗布品質。 在-個實施例中’塗布設備包括疊置於 兩對金屬離子源28,因此，提供甚至更快速：：上的 /或相異陰極之連續更換而無塗布製程之全然：布，及 驅動兩個金屬離子源28之電泣 。 脈衝式電流，其頻率係組成在上以佳是產生 於i，000Hz且更使用力大致低 更使用在▲知之金屬離子源中。m — 施例令，傳遞至第二離子源28 纟較佳貫S 201233830 The particle cloud generated by the sub source 2 or the laser ablation source 3 is homogenized. The angle α is preferably less than 1 3 5 〇, and β is more preferably less than 120. To provide sufficient deflection and sufficient over-the-counter. The deficiency, however, is based on the fact that the present invention is independent of all other defects. The two degrees are also greater than 90. Preferably, it is greater than 95. In order to avoid the alignment of the two metal-filtered electric foxes, the axis 2 of the arc ion source 2, and the case where the vines produced by one source are directed to another source. This feature configuration avoids any occlusion or baffle elements between the two bundles, thus resulting in a simpler and smaller ^ α 丄 J ), which is also easier to clean. Moreover, since the beam is not aligned, the space is diffused, so that the mixture σ of the chamber bundle becomes a more homogeneous distribution of the dice to one. In a preferred embodiment, the two bins of the volume ν metal ion source 28 are not on the thousand faces, but the portions are on two parallel or -,, 1 to ten sides, #哈哈沁Two different directions outside, and along the 妓', the bundle of bamboo borrowed ~u /, Tongzhi's guide' will come from the source 28 of the two. This has a distribution for entanglement of particles in η perpendicular to the plane of the figure, and ^ + 曰 evolves into homogeneity of the electricity in the deposition chamber 1 at the time of coating, thus resulting in improved coating quality. In one embodiment the 'coating apparatus comprises stacked two pairs of metal ion sources 28, thus providing even faster:: continuous replacement of the upper or different cathodes without the full coating process: cloth, and drive two Electrocry of a metal ion source 28. The pulsed current, whose frequency is composed above, is preferably generated at i,000 Hz and is used at a much lower power. It is also used in the metal ion source. m – a case order, passed to the second ion source 28 纟 preferably
9〇 电抓相對於第一雜工、K 28之電流為相位偏離(dephased)，因 f離子源 造成較小之擾動，及粒子之更加 乳網路系統 戈抓動進入沉積室j。 -12- 201233830 各脈衝較佳是具有150mJ以上之能量。纟電流脈衝較佳 是大於4,000A，因此大致大於習知系統中所使用之約為 1000A之習知電流。儘管需要更複雜之電子設備，測試 及實驗已顯示此高電流提供料件改良的及更規律的塗 布。 圖中所圖示之裝置更包括裝設於沉積室丨，位在第 二連接凸緣10上方之脈衝式雷射剝蝕源3，該第二連接 凸緣10與連接有離子源2之帛一連接凸缘1〇相同或相 容。脈衝式雷射剝蝕源3適於剝蝕標@ 32,如石墨或碳 標的。由於其產生’例士σ，如鑽石塗層(dlc)之高純度膜 的能力，此脈衝式雷射剝㈣3是有用的。雷射源3〇產 生透過窗37被導向碳標的32之脈衝式雷射束3〇〇。可 使用聚焦透鏡（未示出）將雷射束聚焦。 雷射束以大致之切線角度傳達至圓柱形標的32,使 得自標的3 2瞬間蒗發之难缺2 am λ …\之妷離子被投射在與雷射之源起 方向相異的方向。此有* 。令助於防止將碳沉積在窗37上。 較佳實施例中，雷射φ Ί λ Λ m , 貫“i"射束300因此與標的32之切線形成小 於45。之角度，較佳是小於 .. θ 』於20 。杈佳是控制受步進馬達 34控制之移動鏡31，以插产揭认 便在標的32之理想位置使雷射 束偏折。 ιπ田耵 使用第一馬達33，用、击病士 ± ^ ,, ^ 用乂連、，只或以連續步驟旋轉圓柱 彤才示的3 2。使用第二*洁 達34 ’用以沿圓柱形標的32之 的縱向部位。控制2,以便改變被剝触之圓柱 面之規律性剝心以產生標…體表 了選用附加之馬達，用以在垂直於到 -13- 201233830 來的雷射束的方向中，相對於該雷射移動標的32。在選 項中卩手動凡成用以抵銷標的直徑之減縮的此偏移。 在一個實施例中，兩個雷射3〇係設置於同一脈衝式 田射剝蝕源3巾’且被用於同時攻擊同一碳標的32，或 兩相異的32’因此造成更快速之剝蝕及更快速之塗布。 將自‘的3 2所剝蝕之粒子流導向將其鏈結至沉積 至1之着曲導官，且使用由粒子束所越過之偏折線圈3 8 使其在此導管中偏折。較佳是將此線圈38裝設在執條 上，使得能將其手動旋轉且沿導管偏移以便控制偏折。 已提及之第二線圈3 9為束所越過且在沉積室之另一側 上與線圈26協同，以便控制沉積室中雲的均質性。 導管中之彎角較佳是組成在3 0。與6 0。之間，且較佳 疋45。’以便提供緩和之過濾且在彎束中保持某些較大 之碳粒子’因此造成較若使用更彎曲或甚至雙倍彎曲之 導管時更快且較佳之塗布。阱35將具相異重量之粒子捕 捉於導管中。 本方法亦關於一種起自未經塗布之料件製造經塗布 之料件的方法，該方法使用圍繞共通沉積室之複數個塗 布設備’其中該沉積室包括複數個對等之凸緣且其中該 方法包括將金屬過濾式電弧離子源裝設至該凸緣之任一 者’將雷射剝蝕源裝設至該凸緣之任一其它者，以及將 相異塗料之相異層連續沉積至該沉積室中的料件。特別 就純度及規律性而論，此方法，以及如上述之新金屬過 渡式離子源與雷射剝蝕源的使用，造成製造具有先前從 未達成之塗布特性的新料件。 -14- 201233830 【圖式簡單說明】 第1圖係表示本發明之裝置之截面圖。 【主要元件符號說明】 1 沉積室 2 第一塗布設備：金屬過濾式電弧離子源 10 連接凸緣 100 導入沉積室内之軸 20 陰極 200 陰極之軸 21 陽極 23、 24 聚焦線圈 2 5〜 27 偏折線圈 28 金屬離子源 29 金屬阱 3 第二塗布設備：雷射剝蝕源 30 雷射 300 雷射束 31 鏡子 32 標的（如碳標的） 33 第一馬達 34 第二馬達 35 阱 36 陽極 37 窗 38、 39 偏折線圈 5 離子餘 -15-9〇 The electric current is dephased relative to the first handyman, K 28 current, because the f ion source causes less disturbance, and the particle's more milk network system grabs into the deposition chamber j. -12- 201233830 Preferably, each pulse has an energy of 150 mJ or more. The chirp current pulse is preferably greater than 4,000 A and is therefore substantially larger than the conventional current of about 1000 A used in conventional systems. Despite the need for more sophisticated electronics, tests and experiments have shown that this high current provides improved and more regular coating of the material. The device illustrated in the figure further comprises a pulsed laser ablation source 3 mounted on the deposition chamber 上方 above the second connection flange 10, the second connection flange 10 being connected to the ion source 2 The connecting flanges 1 are identical or compatible. The pulsed laser ablation source 3 is suitable for ablation of @32, such as graphite or carbon. This pulsed laser stripping (4) 3 is useful because of its ability to produce a 'sigma σ, such as a diamond-coated (dlc) high purity film. The laser source 3 produces a 32-pulse laser beam 3 透过 that is directed through the window 37 to the carbon target. The laser beam can be focused using a focusing lens (not shown). The laser beam is transmitted to the cylindrical target 32 at a substantially tangential angle so that the self-standard 3 2 instantaneous burst of the 2 am λ ... \ 妷 ion is projected in a direction different from the direction of the laser source. This has *. This helps prevent carbon from depositing on the window 37. In the preferred embodiment, the laser φ Ί λ Λ m , the "i" beam 300 thus forms an angle of less than 45 with the tangent of the target 32, preferably less than .. θ" at 20. The moving mirror 31 controlled by the stepping motor 34 deflects the laser beam at the ideal position of the target 32 by inserting the product. ιπ田耵 uses the first motor 33, and uses the diseaser ± ^ , , ^ for 乂Connect, only or in a continuous step, rotate the cylinder to show 3 2 . Use the second * Jie Da 34 ' to use the longitudinal part of the cylindrical target 32. Control 2 to change the rule of the stripped cylindrical surface Sexually stripped to produce a standard surface. The optional motor is used to move the target 32 relative to the laser in the direction perpendicular to the laser beam from -13 to 201233830. Used to offset this offset of the reduction in the diameter of the target. In one embodiment, two lasers are provided in the same pulsed field erosion source and are used to simultaneously attack the same carbon target 32, or The two different 32's thus result in faster ablation and faster coating. The particle stream is directed to link it to the guide, and is deflected in the conduit using a deflecting coil 3 8 that is crossed by the particle beam. Preferably, the coil 38 is mounted The strip is manually rotated and offset along the conduit to control the deflection. The second coil 39 has been mentioned as being crossed by the beam and cooperating with the coil 26 on the other side of the deposition chamber to control deposition The homogeneity of the cloud in the chamber. The angle of the bend in the conduit is preferably between 30 and 60, and preferably 疋45.' in order to provide a gentle filtration and maintain some larger in the bend. The carbon particles 'cause a faster and better coating than if a more curved or even double-bent conduit is used. The trap 35 captures particles of different weights in the conduit. The method also relates to an uncoated coating. A method of making a coated article using a plurality of coating devices surrounding a common deposition chamber, wherein the deposition chamber includes a plurality of equivalent flanges and wherein the method includes mounting a metal filtered arc ion source To any of the flanges' will be laser An etch source is provided to any of the other of the flanges, and a material that successively deposits a distinct layer of the distinct coating into the deposition chamber, particularly in terms of purity and regularity, and as described above The use of new metal transition ion sources and laser ablation sources has resulted in the manufacture of new materials with previously unobtained coating characteristics. -14- 201233830 [Simplified Schematic] Figure 1 shows the cross section of the device of the present invention. Fig. [Description of main components] 1 deposition chamber 2 first coating equipment: metal filter arc ion source 10 connection flange 100 shaft into the deposition chamber 20 cathode 200 cathode shaft 21 anode 23, 24 focus coil 2 5~ 27 Deflection coil 28 Metal ion source 29 Metal trap 3 Second coating equipment: Laser ablation source 30 Laser 300 Laser beam 31 Mirror 32 Target (eg carbon label) 33 First motor 34 Second motor 35 Well 36 Anode 37 Window 38, 39 deflection coil 5 ion remaining -15-