201236225 六、發明說明： 【發明所屬之技術領域】 、，本發明是有關於一種發光元件，且特別是有關於一種 發光二極體(led)元件及其製作方法。 【先前技術】 为明參照第1圖，其係繪示一種習知發光二極體元件之 ej面圖。此發光二極體元件1〇〇主要包含發光二極體晶片 鲁102、封襄基座104、導線架106、導線1〇8、反射層11〇 ’、、封裝膠體112。其中’導線架1〇6包含導腳116與118、 以=金屬導熱塊12〇。此外，導腳ιΐ8與金屬導熱塊 接合’而導腳116則與金屬導熱塊12〇和導腳⑽ 分 離。 封裝基座104與導線架106結合而構成一承載體。在 此承載體中，封裝基座104暴露出每個導腳116與US的 -部分、以及金屬導熱塊12G之底面的_部分。此外，封 #裝基座1〇4具有凹槽114。其中，此凹槽1M更暴露出㈣ 基座104之金屬導熱塊12G之上表面的_部分、以 116之表面的一部分。 q 發光二極體晶片102設置於封裝基座1〇4之凹槽ιΐ4 中，並固定在金屬導熱塊120之暴露出的上表面上。發光 二極體晶片102可透過導線1〇8、以及與金屬導熱塊12〇 接合的方式，而分別與導腳116和118電性連接。如此一 來’外部電源可透過導腳116與118,而供應電力予發光二 極體晶片102。 一 201236225 反射層106則設置在封裝基座1〇4之凹槽114的側壁 上，以利將發光二極體晶片1〇2朝凹槽114側壁所發射之 光朝發光二極體元件1〇〇之正面反射，藉此可提高發光二 極體元件100之光取出效率。封裝膠體112則填充在封裝 基座104之凹槽114中，並包覆住發光二極體晶片1〇2、 導線108、反射層11〇、金屬導熱塊12〇之暴露出的上表面、 與導腳116遭暴露出的表面。 在此習知技術中’為了解決發光二極體晶片1〇2在大 電流操作下所產生的散熱問題，採用使導線架1〇6具有金 屬導熱塊120之設計的方式。發光二極體晶片1〇2運轉所 產生之熱’可利用此金屬導熱塊12〇來將其導出。如此一 來’可避免元件運轉時所產生之熱量累積在發光二極體晶 片102,進而可增進發光二極體晶片1〇2之發光效率與可 靠度。 然而’在這樣的導線架1〇6設計中，受到金屬導熱塊 120與導腳118相互連接，但卻厚度不同的影響，導線架 106之製作難度將大為提高。 此外，封裝基座104係由聚-鄰-苯二曱醯胺 (Polyphthalamide ; PPA)材料射出成型而製成。然而，ppa 材料的散熱效果不佳，因此封裝基座104無法將發光二極 體晶片102運轉所產生之熱量順利導出。 為了解決散熱問題，目前亦提出了一種採用不同材料 來製作封襞基座的方式。此種方式係採用陶瓷材料，例如 低 /皿共燒陶竟（L〇w Temperature Co-fire Ceramic ; LTCC)， 來作為封襞基座之材料。由於陶瓷材料具有良好的散熱特 201236225 性，因此以陶瓷材料來作為封裝基座的材料，可有助於發 光二極體元件之散熱。 ' 但由於低溫共燒陶瓷材料為多層堆疊結構，且質地較 脆，因此不易以其來製作封裝基座。特別是，封裝基座之 反射碗杯目前大都係採用雷射來加以製作。但是^射的 使用不僅導致製作成本大幅提高，也無法製作出平滑且具 特定角度的反射碗杯側壁。如此-來，會造成發光二極體 晶片之出光的反射角度不佳，進而影響發光二極體元件之 光形，並導致發光一極體元件之亮度下降。 因此，如何降低縣基座之製程複雜度，並兼顧封裝 基座之散熱效果，實為發光二極體元件製作上的一大重要 課題。 【發明内容】201236225 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting element, and more particularly to a light-emitting diode (LED) element and a method of fabricating the same. [Prior Art] Referring to Fig. 1, there is shown an ej face view of a conventional light-emitting diode element. The light-emitting diode element 1A mainly includes a light-emitting diode wafer 102, a sealing base 104, a lead frame 106, a wire 1〇8, a reflective layer 11〇', and an encapsulant 112. Wherein the lead frame 1〇6 includes the lead pins 116 and 118, and the metal heat conducting block 12〇. Further, the lead pins 8 are joined to the metal heat conducting block, and the lead pins 116 are separated from the metal heat conducting blocks 12A and the lead pins (10). The package base 104 is combined with the lead frame 106 to form a carrier. In this carrier, the package base 104 exposes a portion of each of the lead pins 116 and US, and a portion of the bottom surface of the metal heat conductive block 12G. Further, the package base 1〇4 has a recess 114. Wherein, the recess 1M further exposes a portion of the surface of the upper surface of the metal heat conducting block 12G of the susceptor 104, and a portion of the surface 116. The light-emitting diode wafer 102 is disposed in the recess ι 4 of the package base 1 〇 4 and is fixed on the exposed upper surface of the metal heat conductive block 120. The light-emitting diode chip 102 is electrically connected to the lead pins 116 and 118 through the wires 1 and 8 and the metal heat-conducting block 12A, respectively. In this way, the external power source can supply power to the LED chip 102 through the leads 116 and 118. A 201236225 reflective layer 106 is disposed on the sidewall of the recess 114 of the package base 1〇4 to facilitate the light emitted from the LED substrate 1〇2 toward the sidewall of the recess 114 toward the LED component 1〇 The front side reflection of the crucible can thereby improve the light extraction efficiency of the light emitting diode element 100. The encapsulant 112 is filled in the recess 114 of the package base 104 and covers the exposed upper surface of the LED wafer 1, 2, the wire 108, the reflective layer 11, and the metal thermal block 12, and The surface on which the lead 116 is exposed. In the prior art, in order to solve the heat dissipation problem of the light-emitting diode wafer 1〇2 under a large current operation, a design is adopted in which the lead frame 1〇6 has a design of the metal heat conductive block 120. The heat generated by the operation of the light-emitting diode wafer 1〇2 can be derived by using the metal heat-conducting block 12〇. In this way, the heat generated during the operation of the element can be prevented from accumulating in the light-emitting diode wafer 102, thereby improving the luminous efficiency and reliability of the light-emitting diode wafer 1〇2. However, in such a lead frame 1〇6 design, the metal heat conducting block 120 and the lead pin 118 are connected to each other, but the thickness is different, and the manufacturing difficulty of the lead frame 106 is greatly improved. Further, the package base 104 is formed by injection molding of a polyphthalamide (PPA) material. However, the heat dissipation effect of the ppa material is not good, so the package base 104 cannot smoothly derive the heat generated by the operation of the light-emitting diode wafer 102. In order to solve the heat dissipation problem, a method of making a sealing base by using different materials has also been proposed. In this way, a ceramic material such as L〇w Temperature Co-fire Ceramic (LTCC) is used as a material for the sealing base. Due to the good thermal conductivity of the ceramic material, the ceramic material is used as the material of the package base to help the heat dissipation of the light-emitting diode component. However, since the low-temperature co-fired ceramic material has a multi-layered stack structure and is relatively brittle, it is not easy to use it to make a package base. In particular, reflective cups for packaged pedestals are currently mostly made with lasers. However, the use of ^ shots not only led to a significant increase in manufacturing costs, but also made it possible to produce smooth and angled reflector cup sidewalls. In this way, the reflection angle of the light emitted from the LED chip is not good, thereby affecting the light shape of the light-emitting diode element, and causing the brightness of the light-emitting diode element to decrease. Therefore, how to reduce the complexity of the process of the county pedestal, and take into account the heat dissipation effect of the package pedestal, is an important issue in the manufacture of light-emitting diode components. [Summary of the Invention]
因此，本發明之-態樣就是在提供一種發光二極體元 件及其製作方法，其採用金屬材質來作為封裝基座的本 體’因而封裝基座可提供更優良之散熱效果。 本發明之另 也像疋在提供一種發光二極體元件及其 製作方法’其採用㉝金屬來料封裝基座的本體，因此可 簡單地利錢械加I方式來製作供發光二極體Μ設置之 碗杯狀凹槽的斜邊’有效避免傳統技術之金 ，不易及陶究散熱封裳基座反射碗杯側壁製;;= 缺點。故，可大幅降低封裴基座之凹 作不易的 作成本，並可使發光：極體元件具有所需雜度與製 度。 光光形與亮 201236225 本發明之又-態樣是在提供1發光二極體元件及其 製作方法，其導線接腳相當容易製作。 根據本發明之上述目的，提出一種發光二極體元件。 此發光二極體元件包含-封裝基座、—發光二極體晶片、 至少二導線接腳以及一封裝膠體。封裝基座包含相對之第 一表面與第二表面，且具有一凹槽設於第一表面中。其中， 封裝基座包含-金>1基板H絕緣層位於此金屬基板 之表面上。發光二極體晶片設於凹槽之底面上，其中此發 光二極體晶片具衫同電性之第1性電極與第二電性電 極。前述之導線接腳分離地設置於封敦基座±，且分別* 第一電性電極和第二電性電極電性連接。其中，每個導線 :腳2第一表面與第二表面。封駿膠體包覆住凹槽及發 先二極體晶片。 依據本發明之一實施例，上沭夕谱A 屬支架，且每個c字型金屬線接腳紅字型金 面、封裝基座之外側面與第二表面上。封農基座之第一表 依據本發明之另一實施例， ㈣’且上述之〔字型金屬支架分別 依據本發明之又-實施例， * 籌槽 通孔分別位於發光二極體晶片]之封裝基座更包含二 之底面延伸至封裝基座之帛 '，且這些通孔自凹槽 別設置在這些通孔中。 一衣囟，而上述之導線接腳分 根據本發明之上述目的， 之製作方法，包含下列步驟。提種發光二極體元件 裝基座包含㈣之第-表較裝基座，其中此封 罘一表面，且具有一凹槽設 201236225 於第一表面中。其中，此封裝基座包含一金屬基板、以及 一絕緣層位於金屬基板之表面上。設置至少二導線接腳於 封裝基座上，其中這些導線接腳彼此分離，且每個導線接 腳連接第一表面與第二表面。設置一發光二極體晶片於凹 槽之底面上，其中此光二極體晶片具有不同電性之第一電 性電極與第二電性電極，且前述之導線接腳分別與第一電 性電極和第二電性電極電性連接。形成一封裝膠體包覆住 凹槽及發光二極體晶片。 依據本發明之一實施例，上述提供封裝基座之步驟包 含··提供一金屬平板；形成一凹陷部於此金屬平板中，以 形成金屬基板；以及形成上述之絕緣層包覆住金屬基板之 表面。 依據本發明之另一實施例，上述之金屬平板之材料包 含鋁。此外，形成凹陷部之步驟包含利用機械加工方式。 而且，形成絕緣層之步驟包含利用陽極處理方式，以形成 一氧化is層來作為絕緣層。 依據本發明之又一實施例，上述之提供封裝基座之步 驟更包含於形成絕緣層之步驟前，形成二貫穿孔於凹陷部 之底面及封裝基座之底面，且形成絕緣層之步驟包含使絕 緣層覆蓋在這些貫穿孔之側面上。 本發明採用金屬材質來作為封裝基座之本體，因此可 增強發光二極體元件之散熱效果、降低封裝基座之製作複 雜度與製作成本。 【實施方式】 201236225 請參照第2A圖至第2E圖，其係繪示依照本發明之一 實施方式的一種發光二極體元件之製程剖面圖。本發明之 發光二極體元件適於連結於一外部電源，例如是利用表面 黏著技術（Surface Mounting Technology ; SMT)將本發明之 發光二極體元件固定於一電路板上。本實施方式中，製作 發光二極體元件時，可先製備如第2C圖所示之封裝基座 216。如第2A圖所示，製作封裝基座216時，可先提供金 屬平板200a。金屬平板200a之材料可採用容易加工之金 屬。在一實施例中，金屬平板200a之材料可採用鋁金屬。 接下來，如第2B圖所示，利用例如機械加工方式，於 金屬平板200a之表面202的預設位置上形成凹陷部2〇4 , 藉以形成金屬基板200。凹陷部204凹設於金屬平板2〇〇a 之表面202中，並沒有貫穿金屬平板2〇〇a。因此，凹陷部 204具有底面256與側壁252。凹陷部204可例如為碗杯 型。在一實施例中，凹陷部204之側壁252與底面256之 間的夾角0的範圍可例如為〇。<夾角^<90。。在一較佳 實施例中，夾角Θ的範圍較佳可從30。至60。。 隨後’形成絕緣層206於金屬基板200之至少上表面， 而形成封裝基座216。絕緣層206係用以作為後續發光二 極體晶片與封裝基座216間的絕緣之用，在沒有電性短路 疑慮的部分’並不需要特別加以限定有絕緣層206。如第 圖所不，於本實施例中，絕緣層206係包覆住金屬基板 、〇的所有表面°封裝基座216包含二表面212與214位 $封裝基座216之相對二側。此外，由於絕緣層206係包 在具有凹陷部2〇4之金屬基板2〇〇的表面，因此由金屬 201236225 基板與被覆於其表面上之輯層所㈣之美 座216具有凹槽2〇8。其中，凹槽細設於封裝基座us 之表面212中。 在一實施例中，金屬平板2GGa之材料可包含銘。如此 一來，可利用例如陽極處理方式，於金屬基板2〇〇之所有 表面上形成一層氧化鋁，來作為絕緣層206之材料。在此 實施例中，由於氧化紹層之厚度若太厚，可能會導致封裝 基座216的散熱與反射效果下降。因此，本實施例藉由控 制氧化紹層之厚度，來降低氧化賴組成之絕緣層2〇6對 封裝基座216之散熱效能與反射率的負面影響。在—例子 中，可將氧化鋁層之厚度的範圍例如控制為從5“m至45 βΐΆ。 在另一些實施例中，由於氧化鋁的外觀顏色容易偏黑 而具有吸光效果，不利於反射光。因此，可選擇性地形成 反射層210覆蓋在凹槽208之側壁248上，以使凹槽208 之側壁248具有較佳之光反射率。其中，可利用例如濺鍍 或蒸錢方式’來形成反射層210。在一些例子中，反射層 210之材料可例如為二氧化鈦(Ti〇2)或銀。 接著’提供發光二極體晶片226。在一實施例中，如 第2D圖所示，發光二極體晶片226主要可包含磊晶基板 228、第一電性半導體層230、發光層232、第二電性半導 體層234、以及第一電性電極236與第二電性電極238。在 發光二極體晶片226中，第一電性半導體層230位於磊晶 基板228上。發光層232與第二電性半導體層236則依序 堆疊在部分之第一電性半導體層230上。第一電性電極236 201236225 位於第一電性半導體層230暴露出之另一部分上，而第二 電性電極238則位於部分之第二電性半導體層234上。在 本發明中，第一電性與第二電性為不同之電性。例如，第 一電性與第二電性之其中一者為η型，另一者則為p型。 然後，進行固晶步驟。在一實施例中’可利用例如黏 貼或共晶接合(eutectic bonding)的方式’將發光二極體晶片 226設置在封裝基座216之凹槽208的底面246上。當反 射層210覆蓋在凹槽208之底面246與侧壁248上時，發 光一極體晶片226接合在凹槽208之底面246上方的反射 層210上。在第2D圖所示之示範實施例中，發光二極體 晶片226係利用導熱膠254，例如銀膠，而黏貼在凹槽2〇8 之底面246上。 在本發明中’封裝基座可具有多個凹‘ ’且可提供數 個發光一極體晶片分別設置在這些凹槽中，以同時製作多 個發光二極體元件。於本實施例中，在具有多個凹槽的情 况下，於進行下一步驟前，可進行切割製程將各個凹槽分 開而形成多個封裝基座216。 如第2D圖所示，完成發光二極體晶片226之設置後， =至少一導線接腳，例如金屬支架222與224，以夾固而 腕配的方式，設置在封裝基座216上。其中，這些導線接 :例如金屬支架222與224，設置在封裝基座216上之 別补呈彼此分離狀態。這些金屬支架222與224可用以分 式:為連接外部正負電源的導線接腳。當然，在本實施方 ^ ，亦可先設置金屬支架222與224於封裝基座216上， 進行發光二極體晶片226的固晶程序。 201236225 為為導_腳之金屬支架222與以 為子U冓。此外，這些〔字型金 延伸在封裝基座216之表面212、介於相對之二表 與214間之封裝基座216的外側面攻、盘表面2 因此’每個金屬支架222與224可連封 面 212與214。 <衣面Accordingly, the present invention provides a light-emitting diode element and a method of fabricating the same, which uses a metal material as the body of the package base. Thus, the package base can provide a more excellent heat dissipation effect. Another aspect of the present invention is to provide a light-emitting diode element and a method for fabricating the same, which uses a 33 metal material to package the body of the base, so that it can be easily fabricated by means of a mechanical device to provide a light-emitting diode arrangement. The beveled edge of the cup-shaped groove is effective to avoid the gold of the traditional technology, and it is not easy to use the heat-dissipating squeezing base to reflect the side wall of the cup;; Therefore, the cost of the recess of the sealing base can be greatly reduced, and the light-emitting: the polar body component has the required complexity and system. Light and light shape and brightness 201236225 A further aspect of the present invention provides a light-emitting diode element and a method of fabricating the same, which are relatively easy to fabricate. According to the above object of the present invention, a light emitting diode element is proposed. The light emitting diode component comprises a package base, a light emitting diode chip, at least two wire pins, and an encapsulant. The package base includes opposing first and second surfaces and has a recess disposed in the first surface. Wherein, the package base comprises - gold > 1 substrate H insulating layer is located on the surface of the metal substrate. The light emitting diode chip is disposed on the bottom surface of the recess, wherein the light emitting diode chip has a first polarity electrode and a second electrical electrode. The aforementioned wire pins are separately disposed on the sealing base ±, and respectively * the first electrical electrode and the second electrical electrode are electrically connected. Wherein each wire: the first surface and the second surface of the foot 2. The seal colloid covers the groove and the first diode chip. According to an embodiment of the invention, the upper 沭 spectrum A is a support, and each of the c-shaped metal wire pins has a red-shaped gold surface, and the outer side and the second surface of the package base. The first table of the agricultural base is according to another embodiment of the present invention, (4) 'and the above-mentioned [shaped metal brackets are respectively according to the present invention - the embodiment, * the grooved through holes are respectively located in the light emitting diode wafer] The package base further includes a bottom surface extending from the bottom surface of the package to the package base, and the through holes are disposed in the through holes from the groove. A clothespin, and the above-mentioned wire pin is divided according to the above object of the present invention, and the manufacturing method comprises the following steps. Lifting the LED component The mounting base comprises (4) a first-table mounting base, wherein the sealing surface is a surface and has a recess in the first surface. Wherein, the package base comprises a metal substrate, and an insulating layer is located on the surface of the metal substrate. At least two lead pins are disposed on the package base, wherein the lead pins are separated from each other, and each of the lead pins connects the first surface and the second surface. A light-emitting diode chip is disposed on the bottom surface of the recess, wherein the photodiode wafer has a first electrical electrode and a second electrical electrode of different electrical properties, and the wire lead is respectively connected to the first electrical electrode The second electrical electrode is electrically connected. An encapsulant is formed to cover the recess and the LED wafer. According to an embodiment of the invention, the step of providing a package base comprises: providing a metal plate; forming a recess in the metal plate to form a metal substrate; and forming the insulating layer to cover the metal substrate surface. According to another embodiment of the invention, the material of the metal plate described above comprises aluminum. Furthermore, the step of forming the recesses involves the use of mechanical processing. Moreover, the step of forming the insulating layer includes utilizing an anodizing treatment to form an oxidized is layer as an insulating layer. According to still another embodiment of the present invention, the step of providing the package base further includes forming a through hole on the bottom surface of the recess and the bottom surface of the package base before the step of forming the insulating layer, and the step of forming the insulating layer includes An insulating layer is placed on the sides of the through holes. The invention adopts a metal material as the body of the package base, thereby enhancing the heat dissipation effect of the light emitting diode element, reducing the manufacturing complexity and manufacturing cost of the package base. [Embodiment] 201236225 Please refer to Figs. 2A to 2E, which are cross-sectional views showing a process of a light emitting diode device according to an embodiment of the present invention. The light-emitting diode element of the present invention is adapted to be coupled to an external power source, such as a surface mount technology (SMT) to secure the light-emitting diode component of the present invention to a circuit board. In the present embodiment, when the light-emitting diode element is fabricated, the package base 216 as shown in Fig. 2C can be prepared first. As shown in Fig. 2A, when the package base 216 is fabricated, the metal plate 200a can be provided first. The material of the metal plate 200a can be metal which is easy to process. In an embodiment, the material of the metal plate 200a may be aluminum metal. Next, as shown in Fig. 2B, a depressed portion 2?4 is formed at a predetermined position of the surface 202 of the metal flat plate 200a by, for example, machining, whereby the metal substrate 200 is formed. The depressed portion 204 is recessed in the surface 202 of the metal flat plate 2〇〇a and does not penetrate the metal flat plate 2〇〇a. Therefore, the recess 204 has a bottom surface 256 and a side wall 252. The recess 204 can be, for example, a cup type. In one embodiment, the angle 0 between the sidewall 252 and the bottom surface 256 of the recess 204 may be, for example, 〇. <angle ^ < 90. . In a preferred embodiment, the angle Θ is preferably in the range of 30. To 60. . Subsequently, an insulating layer 206 is formed on at least the upper surface of the metal substrate 200 to form a package base 216. The insulating layer 206 is used for insulating between the subsequent light emitting diode chip and the package base 216, and the insulating layer 206 is not particularly limited in the portion where there is no electrical short circuit. As shown in the figure, in the present embodiment, the insulating layer 206 covers all surfaces of the metal substrate and the package. The package base 216 includes two surfaces 212 and 214 positions on opposite sides of the package base 216. Further, since the insulating layer 206 is wrapped on the surface of the metal substrate 2A having the depressed portion 2〇4, the substrate 216 of the metal 201236225 substrate and the layer (4) coated on the surface thereof has the groove 2〇8. The recess is finely disposed in the surface 212 of the package base us. In an embodiment, the material of the metal plate 2GGa may include the name. In this manner, a layer of alumina can be formed on all surfaces of the metal substrate 2 by, for example, anodizing, as the material of the insulating layer 206. In this embodiment, if the thickness of the oxide layer is too thick, the heat dissipation and reflection effects of the package base 216 may be lowered. Therefore, in the present embodiment, by controlling the thickness of the oxide layer, the negative effect of the insulating layer 2〇6 of the oxide composition on the heat dissipation performance and the reflectivity of the package base 216 is reduced. In an example, the range of the thickness of the aluminum oxide layer can be controlled, for example, from 5"m to 45βΐΆ. In other embodiments, since the appearance color of the alumina is easily blackish, it has a light absorbing effect, which is disadvantageous for reflected light. Therefore, the reflective layer 210 can be selectively formed to cover the sidewall 248 of the recess 208 such that the sidewall 248 of the recess 208 has a better light reflectivity, wherein it can be formed by, for example, sputtering or steaming. Reflective layer 210. In some examples, the material of reflective layer 210 can be, for example, titanium dioxide (Ti〇2) or silver. Next, a light-emitting diode wafer 226 is provided. In one embodiment, as shown in Figure 2D, the light is emitted. The diode wafer 226 may mainly include an epitaxial substrate 228, a first electrical semiconductor layer 230, a light emitting layer 232, a second electrical semiconductor layer 234, and a first electrical electrode 236 and a second electrical electrode 238. In the diode wafer 226, the first electrical semiconductor layer 230 is disposed on the epitaxial substrate 228. The light emitting layer 232 and the second electrical semiconductor layer 236 are sequentially stacked on a portion of the first electrical semiconductor layer 230. Electrical electrode 236 201236225 The second electrical electrode 238 is located on a portion of the second electrical semiconductor layer 234. In the present invention, the first electrical property and the second electrical property are Different electrical properties. For example, one of the first electrical property and the second electrical property is an n-type, and the other is a p-type. Then, a solid crystal step is performed. In an embodiment, for example, a paste or The manner of eutectic bonding 'places the light-emitting diode wafer 226 on the bottom surface 246 of the recess 208 of the package base 216. When the reflective layer 210 covers the bottom surface 246 and the sidewall 248 of the recess 208 The light-emitting diode wafer 226 is bonded to the reflective layer 210 above the bottom surface 246 of the recess 208. In the exemplary embodiment shown in FIG. 2D, the light-emitting diode wafer 226 utilizes a thermally conductive adhesive 254, such as silver paste. And being adhered to the bottom surface 246 of the recess 2 〇 8. In the present invention, the 'package base can have a plurality of recesses' and a plurality of light-emitting one-pole wafers can be respectively disposed in the recesses to simultaneously produce more Light-emitting diode elements. In this embodiment, there are multiple In the case of the groove, before the next step, a cutting process may be performed to separate the respective grooves to form a plurality of package pedestals 216. As shown in Fig. 2D, after the setting of the illuminating diode chip 226 is completed, = At least one wire lead, such as metal brackets 222 and 224, is disposed on the package base 216 in a manner of being clamped and wrist-wound, wherein the wires are connected, for example, metal brackets 222 and 224, and are disposed on the package base 216. The metal brackets 222 and 224 can be used in the form of a split: a wire pin for connecting an external positive and negative power supply. Of course, in the present embodiment, the metal brackets 222 and 224 can be first disposed on the package base. At 216, a die bonding process of the LED wafer 226 is performed. 201236225 is the metal bracket 222 for the _ foot and the child U 冓. In addition, these [types of gold extend over the surface 212 of the package pedestal 216, the outer side of the package pedestal 216 between the opposing two tables and 214, the disk surface 2 and thus each metal bracket 222 and 224 can be connected Covers 212 and 214. <clothing
在一示範實施例中，請同時參照第四圖與第扣圖， 於形成封裝基座216之絕緣層寫之前，利用例如機械加 工方式製作金屬基板200之凹陷部204時，可在金屬旯板 細上之金屬支架222與224預計設置之處，分別對^製 作出溝槽218與DO。因此，如第犯圖所示，這些溝槽 218與220設於金屬基板2〇〇之周緣。於是，在設置作為 導線接腳之金屬支架222與224時，這些c字型金屬支架 222與224可分別欲設在這些溝槽218與220中。故，^ 些溝槽218與220有利於金屬支架222與224的定位與固 定。 ’、 接著，如第2E圖所示，可利用例如打線接合 (wire-bonding)方式，以導線240與242分別連接發光二極 體晶片226之第一電性電極236與金屬支架222、以及第 二電性電極238與金屬支架224，藉以使金屬支架222和 224分別與發光二極體晶片226之第一電性電極236和第 一電性電極238電性連接。在一實施例中’導線240與242 可例如為金線。 在本實施方式中’可同樣利用例如打線接合方式、或 者利用表面黏著技術(SMT)，來將金屬支架222與224連 12 201236225 接至一外部電源（未繪示）’以利用此外部電源來提供發光 一極體晶片226電力。例如，金屬支架222與224係連接 到電路板上相對應之金屬接墊上，使得外部電源可以透過 電路板上之金屬接塾將電源分別導入發光二極體晶片2 2 6 之第一電性電極236以及第二電性電極238。 然後，將封裝膠體244填入封裝基座216之凹槽2〇8 中，而完成發光二極體元件250的製作。如第2E圖所示， 在發光二極體元件250中，封裝膠體244完全填滿凹槽 208,且完全包覆住發光二極體晶片226、及導線24〇與 242,並包覆住部分之金屬支架222與224。在一實施例中， 封裝膠體244中可摻雜有螢光粉，例如釔鋁石榴石（yag) 系列或BOSE系列等螢光粉。 本發明之發光二極體元件的導線接腳亦可為其他型 式，而非上述實施方式中所述之金屬支架的型式。請參照 第3A圖至第3E圖’其係繪示依照本發明之另—實施方式 的一種發光二極體元件之製程剖面圖。本實施方式中，製 鲁作發光二極體元件時，如第3A圖所示，可先提供金屬平 板300a。金屬平板30〇a之材料可採用容易加工之金屬，例 如I呂。 接著，如第3B圖所示，利用例如機械加工方式，於金 屬平板300a之表面302的預設位置上形成凹陷部3〇4，而 形成金屬基板300。凹陷部304並沒有貫穿金屬平板3〇〇a， 因而具有底面306與侧壁308。在一實施例中，凹陷部3〇4 可為碗杯型，且凹陷部304之側壁308與底面306之間的 夾角0的範圍可例如為0。〈夾角0 <90。。在一較佳實施 13 201236225 例中，夾角Θ的範圍較佳可從30。至60。。 在此實施方式中，於金屬平板300a中形成凹陷部304 時，可同樣利用例如機械加工方式，同時形成彼此分離之 至少二貫穿孔於凹陷部304之底面306中。此二貫穿孔自 凹陷部304之底面306而向下延伸穿透金屬平板3〇〇a。在 一實施例中，此二貫穿孔之孔徑係從凹陷部3〇4之底面3〇6 向下逐漸增加。隨後，於適當位置形成絕緣層318。絕緣 層318係用以作為後續發光二極體晶片與封裝基座間 的絕緣之用，在沒有電性短路疑慮的部分，並不一定需要 有絕緣層318。如帛3C圖所示’本實施例之絕緣層318係 包覆住金屬基板300之所有表面，包含此二貫穿孔之側面 314與316 ’而形成封裝基座334。封裝基座334包含相對 之表面330與底面332，且具有凹槽32〇設於封装基座別 之表面330中。同樣地，凹槽32〇具有底面322，壁似。 在此封裝基座334中，金屬基板細之二 緣層3則吏分別形成通孔31〇與312。因此孔 312自凹槽320之底面322延伸至封裝基座 _ 332。此外’類似金屬基板_之二貫穿孔 =面 =:=_°之一朝封裝基座二 在-實施例中，金屬平板戰之材料 利用例如陽極處理方式’形成一層氧化 :’居且二 夕好刹·。锅緩居Ή 8 甘@、絕緣·層318 之材料、邑緣層318之其他特徵類似於 緣層206，故於此不再贅述。 貝呃方式之絕 接者’如第3D圖所示，制田办 利用例如電鍍製程，局部地 14 201236225 在封裝基座334之通孔310與312中填充金屬，以在通孔 310與312中分別形成導線接腳326與328。導線接腳326 與328之材料可例如為銅。這些導線接腳似與328在封 裝基座334 +，呈彼此分離狀態。導線接腳似與328可 連接凹槽320之錢322與底自332，且可用以分別作為 連接外部正負電源的導線接腳。由於凹槽謂係設置於封 裝基座334之表面33〇巾，因而導線接腳Μ6與328可連 接封裝基座334之表面330中之凹槽32〇的底面322與封 B 裝基座334之底面332。 由於通孔310與312之孔徑係從凹槽320之底面322 朝下漸增’因此分㈣充於通孔310與312中之導線接腳 326與328之孔徑也是凹槽32〇之底面322朝下漸增。這 樣愈來愈大的導線接腳326與328的孔徑設計，不僅有利 於後、，導線接腳326和328與電路板之間的表面黏著製程 的進行’而且也有利於熱量的傳遞，有助於元件的散熱。 接下來，相同於上述實施方式，可選擇性地利用例如 _ 濺鍍或蒸鍍方式’形成反射層336覆蓋在凹槽320之側壁 324上。反射層336之材料可例如為二氧化鈦或銀。 者 k供發光一極體晶片338。在·一實施例中’如 第3E圖所示，發光二極體晶片338主要可包含磊晶基板 340、第—電性半導體層342、發光層344、第二電性半導 體層346、以及第一電性電極348與第二電性電極358。第 電性半導體層342位於磊晶基板340上。發光層344與 第二電性半導體層346則依序堆疊在部分之第一電性半導 體層342上。第一電性電極348位於第一電性半導體層342 15 201236225 暴露出之另一部分上，&始 第二電性半導體層34 性則位於部分之 -, 上。在本發明中，第一雷性與第二 者為η型，另-者則I:型第-電性與第二電性之其中- 設置2述實施方式，將發光二極體晶片338 八 \ &面322上。此外，導線接腳326和328In an exemplary embodiment, please refer to the fourth figure and the buckle diagram at the same time. Before the insulating layer forming the package base 216 is written, the recessed portion 204 of the metal substrate 200 can be fabricated by, for example, machining. Where the thin metal brackets 222 and 224 are intended to be disposed, the grooves 218 and DO are respectively formed. Therefore, as shown in the first figure, these grooves 218 and 220 are provided on the periphery of the metal substrate 2''. Thus, when the metal brackets 222 and 224 are provided as wire pins, the c-shaped metal brackets 222 and 224 may be disposed in the grooves 218 and 220, respectively. Therefore, the grooves 218 and 220 facilitate the positioning and fixing of the metal brackets 222 and 224. Then, as shown in FIG. 2E, the first electrical electrode 236 and the metal holder 222 of the light-emitting diode wafer 226 can be connected to the wires 240 and 242 by wire-bonding, for example, and The second electrical electrode 238 and the metal support 224 are used to electrically connect the metal supports 222 and 224 to the first electrical electrode 236 and the first electrical electrode 238 of the LED 226, respectively. In one embodiment, the wires 240 and 242 can be, for example, gold wires. In the present embodiment, the metal brackets 222 and 224 can be connected to an external power source (not shown) by using, for example, a wire bonding method or a surface mount technology (SMT) to utilize the external power source. A light-emitting one-pole wafer 226 is provided for power. For example, the metal brackets 222 and 224 are connected to the corresponding metal pads on the circuit board, so that the external power source can be respectively introduced into the first electrical electrode of the LED chip 2 2 6 through the metal interface on the circuit board. 236 and a second electrical electrode 238. Then, the encapsulant 244 is filled into the recess 2 〇 8 of the package pedestal 216 to complete the fabrication of the illuminating diode element 250. As shown in FIG. 2E, in the LED component 250, the encapsulant 244 completely fills the recess 208 and completely covers the LED wafer 226, and the leads 24 and 242, and covers the portion. Metal brackets 222 and 224. In an embodiment, the encapsulant 244 may be doped with a phosphor powder, such as a yag series or a BOSE series. The lead pins of the light-emitting diode element of the present invention may be of other types than the type of metal holder described in the above embodiments. Referring to Figures 3A through 3E, there is shown a process cross-sectional view of a light emitting diode device in accordance with another embodiment of the present invention. In the present embodiment, when the light-emitting diode element is manufactured, as shown in Fig. 3A, the metal plate 300a may be provided first. The material of the metal plate 30〇a may be a metal which is easy to process, such as Ilu. Next, as shown in Fig. 3B, the recessed portion 3〇4 is formed at a predetermined position on the surface 302 of the metal flat plate 300a by, for example, machining, to form the metal substrate 300. The recessed portion 304 does not penetrate the metal flat plate 3A, and thus has a bottom surface 306 and a side wall 308. In an embodiment, the recessed portion 3〇4 may be of the cup type, and the angle 0 between the side wall 308 of the recessed portion 304 and the bottom surface 306 may be, for example, zero. <An angle of 0 < 90. . In a preferred embodiment 13 201236225, the angle Θ is preferably in the range of 30. To 60. . In this embodiment, when the depressed portion 304 is formed in the metal flat plate 300a, at least two through holes which are separated from each other are formed in the bottom surface 306 of the recessed portion 304 by, for example, machining. The two through holes extend downward from the bottom surface 306 of the recessed portion 304 through the metal flat plate 3A. In one embodiment, the apertures of the two through holes gradually increase downward from the bottom surface 3〇6 of the recessed portion 3〇4. Subsequently, an insulating layer 318 is formed at an appropriate position. The insulating layer 318 is used for insulating between the subsequent LED chip and the package base. In the portion where there is no electrical short circuit, the insulating layer 318 is not necessarily required. As shown in Fig. 3C, the insulating layer 318 of the present embodiment covers all the surfaces of the metal substrate 300, and includes the side faces 314 and 316' of the two through holes to form the package base 334. The package base 334 includes opposing surfaces 330 and bottom surfaces 332 and has recesses 32 disposed in the surface 330 of the package base. Similarly, the recess 32 has a bottom surface 322 that is wall-like. In the package base 334, the thin edge layer 3 of the metal substrate is formed with through holes 31 and 312, respectively. Thus, the aperture 312 extends from the bottom surface 322 of the recess 320 to the package base _332. In addition, a similar metal substrate _ two through holes = surface =: = _ ° toward the package base two - in the embodiment, the metal plate warfare material uses, for example, anodized way to form a layer of oxidation: 'home and eve Good brakes. The material of the pot Ή8, the insulating layer 318, and the other features of the rim layer 318 are similar to the edge layer 206, and thus will not be described again. The Becker method is as shown in FIG. 3D, and the field office fills the through holes 310 and 312 of the package base 334 with the metal in the through holes 310 and 312, for example, by an electroplating process, locally 14 201236225. Wire pins 326 and 328 are formed, respectively. The material of wire pins 326 and 328 can be, for example, copper. These wire pins appear to be separated from each other by 328 at the package base 334+. The wire pins are similar to the 328 which can be connected to the recess 320 by the money 322 and the bottom 332, and can be used as the wire pins for connecting the external positive and negative power sources, respectively. Since the recesses are disposed on the surface 33 of the package base 334, the wire tabs 6 and 328 can be connected to the bottom surface 322 of the recess 32 of the surface 330 of the package base 334 and the bottom of the package B. Bottom 332. Since the apertures of the through holes 310 and 312 are gradually increased from the bottom surface 322 of the recess 320, the apertures of the lead pins 326 and 328 which are filled in the through holes 310 and 312 are also the bottom surface 322 of the recess 32 The next increase. Thus, the increasingly larger aperture design of the conductor pins 326 and 328 not only facilitates the post-surface adhesion process between the conductor pins 326 and 328 and the circuit board, but also facilitates the transfer of heat, which is helpful. Heat dissipation from components. Next, similar to the above embodiment, the reflective layer 336 may be selectively overlaid on the sidewall 324 of the recess 320 by, for example, sputtering or evaporation. The material of the reflective layer 336 can be, for example, titanium dioxide or silver. The k is used to illuminate the one-pole wafer 338. In an embodiment, as shown in FIG. 3E, the LED wafer 338 may mainly include an epitaxial substrate 340, a first electrical semiconductor layer 342, a light emitting layer 344, a second electrical semiconductor layer 346, and An electrical electrode 348 and a second electrical electrode 358. The first electrical semiconductor layer 342 is located on the epitaxial substrate 340. The light emitting layer 344 and the second electrical semiconductor layer 346 are sequentially stacked on a portion of the first electrical semiconductor layer 342. The first electrical electrode 348 is located on another portion of the first electrical semiconductor layer 342 15 201236225, and the second electrical semiconductor layer 34 is located on a portion of the -. In the present invention, the first lightning property and the second one are n-type, and the other is the I:-type first-electricity and the second electrical--the second embodiment is provided, the light-emitting diode wafer 338 is eight \ & face 322. In addition, wire pins 326 and 328
^ =光3體晶片338之二側。在第犯圖所示之示 例中’發光二極體晶片別係利用導熱膠说，例 如轉，而黏貼在凹槽320之底s 322上。 接著可利用例如打線接合方式，以導線W與354 =別連接發光三極體晶片338之第一電性電極348與導線 腳326以及第一電性電極35〇與導線接腳，藉以使 導線接腳326 > 328分別與發光二極體晶片338之第一電 性電極3 4 8和第二電性電極3 5 〇電性連接。在一實施例中， 導線352與354可例如為金線。 然後，如第3E圖所示，將封裝膠體356填入封裝基座 334之凹槽320中，並使封裝膠體356完全包覆住發光二 極體晶片338、導線352與354、及凹槽320所暴露出之導 線接腳326與328，而完成發光二極體元件36〇的製作。 在一實施例中，封裝膠體356中可摻雜有螢光粉，例如釔 銘石榴石系列或BOSE系列等螢光粉。 本實施例之發光二極體元件適於連結於一外部電源， 例如是利用表面黏著技術（Surface Mounting Technology ; SMT)將本發明之發光二極體元件固定於一電路板相對應 之金屬接墊上，使得外部電源可以透過電路板上之金屬接 16 201236225 墊將電源分別導入發光二極體晶片338之第一電性電極 348以及第二電性電極350。 由上述之實施方式可知，本發明之一優點就是因為本 發明採用金屬材質來作為封裝基座的本體，因此封裝基座 可提供更優良之散熱效果。 由上述之實施方式可知，本發明之另一優點就是因為 本發明採用鋁金屬來作為封裝基座的本體，因此可簡單地 利用機械加工方式來製作供發光二極體晶片設置之碗杯狀 凹槽的斜邊，有效避免傳統技術之金屬導熱塊式導腳製作 不易及陶瓷散熱封裝基座反射碗杯側壁製作不易的缺點。 故，可大幅降低封裝基座之凹槽製作的複雜度與製作成 本，並可使發光二極體元件具有所需之出光光形與亮度。 由上述之實施方式可知，本發明之再一優點為本發明 之發光二極體元件之導線接腳相當容易製作。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何在此技術領域中具有通常知識者，在不脫離 本發明之精神和範圍内，當可作各種之更動與潤飾，因此 本發明之保護範圍當視後附之申請專利範圍所界定者為 準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之說明如下： 第1圖係繪示一種習知發光二極體元件之剖面圖。 第2A圖至第2E圖係繪示依照本發明之一實施方式的 17 201236225 一種發光二極體元件之製程剖面圖。 第3A圖至第3E圖係繪示依照本發明之另一實施方式 的一種發光二極體元件之製程剖面圖。^ = two sides of the light 3 body wafer 338. In the example shown in the first figure, the light-emitting diode chip is bonded to the bottom s 322 of the groove 320 by means of a thermal conductive adhesive, for example, a turn. Then, for example, the wire bonding method can be used to connect the first electrical electrode 348 and the wire leg 326 of the light-emitting diode wafer 338 and the first electrical electrode 35 and the wire lead with the wires W and 354. The legs 326 > 328 are electrically connected to the first electrical electrode 348 and the second electrical electrode 35 of the LED 338, respectively. In an embodiment, wires 352 and 354 can be, for example, gold wires. Then, as shown in FIG. 3E, the encapsulant 356 is filled into the recess 320 of the package base 334, and the encapsulant 356 is completely covered by the LED wafer 338, the wires 352 and 354, and the recess 320. The exposed wire pins 326 and 328 are completed to complete the fabrication of the light-emitting diode element 36. In one embodiment, the encapsulant 356 may be doped with a phosphor powder, such as a phosphor powder such as the yam garnet series or the BOSE series. The LED component of the present embodiment is suitable for being connected to an external power source, for example, by using Surface Mounting Technology (SMT) to fix the LED component of the present invention to a corresponding metal pad of a circuit board. The external power source can be directly introduced into the first electrical electrode 348 and the second electrical electrode 350 of the LED chip 338 through the metal connection 16 201236225 pad on the circuit board. As can be seen from the above embodiments, one of the advantages of the present invention is that since the present invention uses a metal material as the body of the package base, the package base can provide a more excellent heat dissipation effect. It can be seen from the above embodiments that another advantage of the present invention is that since the present invention uses aluminum metal as the body of the package base, the machining method can be used to fabricate the cup-shaped recess for the light-emitting diode chip. The oblique side of the groove effectively avoids the disadvantage that the conventional metal heat conduction block type guide pin is difficult to manufacture and the ceramic heat dissipation package base reflects the side wall of the cup. Therefore, the complexity and fabrication cost of the groove of the package base can be greatly reduced, and the light-emitting diode element can have the desired light-emitting shape and brightness. It is apparent from the above-described embodiments that another advantage of the present invention is that the lead pins of the light-emitting diode element of the present invention are relatively easy to manufacture. While the present invention has been described above by way of example, it is not intended to be construed as a limitation of the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious, the description of the drawings is as follows: Figure 1 shows a conventional light-emitting diode component. Sectional view. 2A to 2E are cross-sectional views showing a process of a light-emitting diode element according to an embodiment of the present invention. 3A through 3E are cross-sectional views showing a process of a light emitting diode device in accordance with another embodiment of the present invention.
【主要元件符號說明】 100 :發光二極體元件 104 :封裝基座 108 :導線 112 :封裝膠體 116 :導腳 120 :金屬導熱塊 200a :金屬平板 204 :凹陷部 208 :凹槽 212 :表面 216 :封裝基座 220 :溝槽 224 :金屬支架 228 .蠢晶基板 232 :發光層 236 :第一電性電極 240 :導線 244 :封裝膠體 248 :側壁 252 :側壁 102 :發光二極體晶片 106 :導線架 110 :反射層 114 :凹槽 118 :導腳 200 :金屬基板 202 :表面 206 :絕緣層 210 :反射層 214 :表面 218 :溝槽 222 :金屬支架 226 :發光二極體晶片 230 :第一電性半導體層 234 :第二電性半導體層 238 :第二電性電極 242 :導線 246 :底面 250 :發光二極體元件 254 :導熱膠 18 201236225 256 ： 底面 258 : 300 ： 金屬基板 300a 302 : 表面 304 ： 306 ： 底面 308 ： 310 ： 通孔 312 ： 314 ： 側面 316 : 318 ： 絕緣層 320 ： 322 ： 底面 324 ： 326 ： 導線接腳 328 ： 330 ： 表面 332 ： 334 ： 封裝基座 336 ： 338 ： 發光二極體晶片 340 ： 342 ： 第一電性半導體層 344 ： 346 ： 第二電性半導體層 348 ： 350 ： 第二電性電極 352 ： 354 ： 導線 356 ： 358 :導熱膠 360 ： 鲁 0 :夾角 外侧面 :金屬平板 凹陷部 侧壁 通孔 側面 凹槽 侧壁 導線接腳 底面 反射層 遙晶基板 發光層 第一電性電極 導線 封裝膠體 發光二極體元件 19[Main component symbol description] 100: Light-emitting diode element 104: Package base 108: Wire 112: Package colloid 116: Lead pin 120: Metal heat-conducting block 200a: Metal plate 204: Recessed portion 208: Groove 212: Surface 216 : package base 220: trench 224: metal bracket 228. stray substrate 232: light-emitting layer 236: first electrical electrode 240: wire 244: encapsulant 248: sidewall 252: sidewall 102: light-emitting diode wafer 106: Lead frame 110: reflective layer 114: recess 118: lead 200: metal substrate 202: surface 206: insulating layer 210: reflective layer 214: surface 218: trench 222: metal bracket 226: light emitting diode wafer 230: An electrical semiconductor layer 234: a second electrical semiconductor layer 238: a second electrical electrode 242: a wire 246: a bottom surface 250: a light emitting diode element 254: a thermal conductive adhesive 18 201236225 256: a bottom surface 258: 300: a metal substrate 300a 302 : Surface 304 : 306 : Bottom surface 308 : 310 : Through hole 312 : 314 : Side 316 : 318 : Insulation 320 : 322 : Bottom surface 324 : 326 : Wire pin 328 : 330 : Surface 332 : 334 : Package base 336 : 338 : Light-emitting diode wafer 340 : 342 : First electrical semiconductor layer 344 : 346 : Second electrical semiconductor layer 348 : 350 : Second electrical electrode 352 : 354 : Conductor 356 : 358 : Thermal adhesive 360 : Lu 0: Angled outer side: metal flat plate recessed side wall through hole side groove side wall wire pin bottom surface reflective layer remote crystal substrate light emitting layer first electrical electrode wire package colloidal light emitting diode element 19