TW201235287A - Mounting flexure contacts - Google Patents

Abstract

A device may comprise a flexure formed of a first semiconductor material. A first trench may be formed in the flexure. The first trench may separate the first semiconductor material into a first portion and a second portion thereof. An oxide layer may be formed in the first trench. The oxide layer may extend over a top portion of the first semiconductor material. A second semiconductor material may be formed on the oxide layer. The first trench and the oxide layer may cooperate to electrically isolate the first portion and the second portion from one another.

Description

201235287 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates generally to semiconductor fabrication techniques and, more particularly, to microelectromechanical systems (MEMS) fabrication techniques suitable for use, for example, in actuators and other devices. The present patent application claims priority to U.S. Patent Application Serial No. 12/946,466, filed on Nov. 5, 2010, the content of which is expressly incorporated by reference. [Prior Art] Actuators for use in compact cameras and other devices are also well known. These actuators typically include a voice coil 'which is used to move a lens to focus zoom or optical image stabilization. Small cameras are used in many different electronic devices. For example, small cameras are commonly used in cellular phones, laptops, and surveillance devices. Small cameras can have many other applications. It is often desirable to reduce the size of a compact camera. As the size of electronic devices continues to decrease, the size of compact cameras, which are part of such electronic devices, must also be reduced. The reduction in size of compact cameras such as S-Hai can be facilitated through the use of microelectromechanical systems (MEMS) manufacturing techniques. For example, microelectromechanical systems (MEMS) fabrication techniques can be used to facilitate the fabrication of smaller actuators and the like. [Invention] According to an embodiment, a device can include a deflection formed by a first semiconductor material. - a first gap can be formed in the deflection. The first gap I59976. Doc 201235287 can separate the first semiconductor material into one of its first part and a second part. An oxide layer may be formed in the first trench. The oxide layer can extend over the top portion of the first semiconductor material. A second semiconductor material can be formed on the oxide layer. The first trench and the oxide layer can cooperate to electrically isolate portions and (d) two portions from one another. The system according to the embodiment may include an outer frame and an actuator formed on the outer frame. - The deflection may be formed from a -th semiconductor material and may be formed in the outer frame. A first trench may be formed in the bond and the first semiconductor material may be separated into one of the first portion and a second portion. a layer oxide layer may be formed in the first trench and may extend over the top portion of the first semiconductor material. A second semiconductor material can be formed on the oxidized (tetra) 1 -gap and the oxide layer can cooperate to electrically isolate the first portion and the second portion from each other. According to an embodiment, the method may include forming-deflection. A gap can be formed in the deflection. An oxide layer can be formed in the trench. A conductive material can be formed on the oxide layer. The method according to the embodiment may include applying a voltage to the actuator of the actuator device via a conductor formed in the one of the deflections of the actuator device. This deflection can attach the actuator device to a lens barrel. The scope of the invention is defined by the technical solution, which is hereby incorporated by reference. A more complete understanding of the embodiments, as well as additional advantages thereof, will be apparent to those skilled in the art. Reference will be made to the attached picture, which will first be 159976. Doc •4- 201235287 A brief description. [Embodiment] The embodiments of the present invention and the advantages thereof are best understood by referring to the following detailed description. It should be understood that the same reference numerals are used to refer to the same elements in one or more figures. • An actuator device suitable for use in a variety of different electronic devices is disclosed in accordance with various embodiments. The actuator device can be adapted for use in a camera, such as a compact camera. The actuator device can be used to manually or automatically focus the compact camera. The actuator device can be used to zoom the compact camera or provide optical image stabilization for the compact camera. The actuator device can be used to align the optics within the camera. The actuator device can be used in any other desired application in an electronic device or any other device. According to one or more embodiments, the actuator device can include one or more MEMS actuators. The actuator device can be formed using a single piece construction. The actuator device can be formed using a non-monolithic construction. The actuator device can be formed using contemporary manufacturing techniques, such as etching and micromachining. A variety of other manufacturing techniques are contemplated. The actuator device can be formed of tantalum (eg, single crystal germanium and/or polycrystalline germanium). The actuator device can be formed from other semiconductors such as helium, neon, diamond* and deuterated gallium. The material from which the actuator device is formed can be doped to obtain one of its desired conductivity. The actuator device can be formed from a metal such as tungsten, chin, mis, aluminum or nickel. Any desired combination of such materials can be used. The motion control of the actuator device and/or the item moved by the actuator device are disclosed in accordance with various embodiments. This motion control can be used to promote a product of 159976. Doc 201235287 To move, while reducing the undesired movement of the item. For example, the motion control can be used to promote movement of the lens along one of the optical axes of the lens while suppressing other movement of the lens. Thus, the motion control can be used to facilitate movement of the lens in a single desired degree of translational freedom while suppressing (4) the lens in all other flat spear degrees of freedom, while suppressing movement of the lens over all rotational degrees of freedom. In another, the motion control promotes movement of the lens over all three translational degrees of freedom while suppressing movement of the lens over all rotational degrees of freedom. Therefore, an enhanced compact camera that can be used alone and used in an electronic device can be provided. This compact camera is suitable for use in many different electronic devices. For example, the compact camera is suitable for use in electronic devices such as a cellular keyboard, a laptop, a television, a handheld device, and a monitoring device. According to various embodiments, a smaller size and enhanced impact resistance are provided. Enhanced manufacturing techniques can be used to provide these and other advantages. These manufacturing techniques can additionally enhance the overall quality and reliability of compact cameras while also substantially reducing their cost. 1 illustrates an electronic device 100 having an actuator device 4〇〇, in accordance with an embodiment. As discussed herein, the actuator device 4 can have one or more actuators 550. In an embodiment, the actuators 55A can be MEMS actuators, such as electrostatic comb drive actuators. In an embodiment, the actuators 550 can be rotary comb drive actuators. The electronic device 100 can have one or more actuators 55A to move any of its desired components. For example, the electronic device 1 can have an optical device such as a compact camera 101 having a light for moving 159976. Doc 201235287 An actuator (such as one or more movable lenses 3〇1) (shown in Figure 2) that is adapted to provide focus, zoom, and/or image stabilization. The electronic device 100 can have any desired number of actuators 550' to perform any desired function. The electronic device can be just a cellular telephone, a laptop, a surveillance device or any other desired device. The compact camera (8) can be built into the electronic device 100, attached to the electronic device 1 or can be separated (e.g., remote) relative to the beta electronic device. Fig. 2 shows a compact camera 101 having a lens barrel 2〇〇 according to an embodiment. The lens barrel 200 can contain one or more optical elements, such as a movable lens 301, which can be moved by the actuator device 4 (shown in Figure). The lens barrel 200 can have one or more optical elements that can be fixed. For example, the lens barrel 200 may contain one or more lenses, apertures (variable or fixed), shutters, mirrors (which may be planar, non-planar, powered or non-powered), helium, space Light modulators, diffraction gratings, lasers, LEDs and/or debt detectors. Any of these items may be fixed or may be moved by the actuator device 400. The actuator device 400 can move a non-optical device, such as a sample provided for scanning. The samples may be biological or non-biological. Examples of biological samples include organisms, tissues, cells, and proteins. Examples of non-biological samples include solids, liquids, and gases. The actuator device _ can be used to manipulate structures, light, sound or any other desired object. The optical elements may be partially or completely contained within the lens barrel 2A. The lens barrel 200 can have any desired shape, for example, the lens mirror 159976. Doc 201235287 Cartridge 200 can be substantially circular, triangular, rectangular, square, pentagonal, hexagonal, octagonal, or any other shape or cross-section configuration. The lens barrel 200 can be permanently or removably attached to the compact camera 101. The lens barrel 2 can be partially defined by a portion of a casing of the compact camera 101. The lens barrel 200 can be partially or completely disposed within the compact camera 〇1. FIG. 3A illustrates an actuator module 300 disposed within the lens barrel 2 according to an embodiment. The actuator module 3A can include the actuator device 400. The actuator device 400 may be entirely contained within the lens barrel 2, partially contained within the lens barrel 200 or entirely outside the lens barrel 200. The actuator device 400 can be adapted to move an optical component contained within the lens barrel 200, an optical component not included in the lens barrel 2, and/or any other desired item. 3B is an exploded view of the lens barrel 2 and the actuator module 300 according to an embodiment. The movable lens 301 is an example of an optical component that can be attached to the actuation. The device 400 can be moved by this. The actuator device 400 can be disposed intermediate a higher module cover 4A and a lower module cover 4A2. Additional optical components may be provided, such as a fixed (e.g., stationary) lens 302. Such additional optical elements may, for example, facilitate focus, zoom, and/or optical image stabilization. Any desired number and/or type of movable (e.g., via the actuator device 400) and fixed optical components can be provided. Figure 4 illustrates the actuator module 3A in accordance with an embodiment. The actuator module 300 can be partially or completely disposed within the compact camera 〇1. The actuator assembly 400 can be partially or fully disposed within the actuator module 3b. For example, the 159976. Doc 201235287 The actuator device 400 can be substantially sandwiched between a higher module cover 4〇1 and a lower module cover 402. The actuator module 300 can have any desired shape. For example, the actuator module 300 can be substantially circular, triangular, square 'rectangular, pentagonal, hexagonal, octagonal, or any other shape or cross-sectional configuration. In one embodiment, the lens barrel 200 can be substantially circular in cross-section configuration, and the actuator module 300 can be configured in a substantially circular cross-section. The use of a substantially circular lens mirror 200 and a substantially circular actuator module 3 can promote advantageous reductions in size: for example, to facilitate a reduction in size; Lens systems are generally preferred. The use of a substantially circular lens barrel 200 and a substantially circular actuator module 300 having a circular lens tends to result in a reduction in wasted volume and thus tends to promote dimensional reduction. As discussed herein, one or more optical components, such as the movable lens 301, can be disposed in an opening 4〇5 (e.g., a hole) formed in the actuator module 3〇〇. Actuation of the actuators 55A can effect movement of the optical elements along an optical axis 410 thereof, for example. Thus, actuation of the actuators 55A can move one or more lenses to effect, for example, focus or zoom. The s-ear actuator module 3 can have cutouts formed therein to facilitate assembly of the actuator module 300 and alignment of the actuator device 4 therein. The slits 403 and/or the electrical contacts 404 partially disposed within the slits 4〇3 can be used to facilitate alignment of the actuator module 3〇〇 relative to the lens barrel 200. FIG. 5A illustrates a top view of the actuator device 400 according to an embodiment 159976. Doc 201235287, having electrical contacts 404, openings 405, internal pivot flex 501, kinematic mounting flex 502 'movable frame 505, an outer frame 506, serpentine contact flexure 508, unfolding torsional flexure 509, The deployment stop 510, the diaphragm damper 511, the ball-in-socket snubber 513, the cantilever deflection 514, the motion control torsion deflection 515, the external pivoting 516' - the fixed frame 517, A platform 520, a lens 521, a rotating shaft 525, an actuator 550, a space 551, and a block 552. Block 552 (Fig. 5A) is shown to represent teeth 560 of actuator 550 in some of the figures (see Figures 5B and 7). Those skilled in the art will appreciate that a comb drive typically includes a number of very small teeth 560 that are more difficult to draw on a map of this scale. For example, the actuator 550 can have between 1 and 10,000 teeth on each side and can have about 2,000 teeth on each side thereof. Thus, in an embodiment, the blocks 552 may not represent the actual configuration of the teeth 560, but instead are shown in place of the teeth 56 to better illustrate the actuators 550 as discussed herein. operating. According to an embodiment, the actuator device 4 can be substantially hexagonal. The hexagon facilitates placement of the actuator device 4 within the substantially circular lens barrel 200. This hexagon also promotes the area occupied by the effective use of the wafer. Other shapes are expected. The actuator device 400 can have a plurality of actuators 550. Only one actuator 550 is shown in detail in Figure 5A. The spaces 55 1 are shown in Figure 5A for two additional actuators 55, which are not shown in detail. Thus, in an embodiment, the actuator device 400 can have three actuators 550 disposed about the opening 405 in a substantially radially symmetrical pattern such that the actuations are 159976. Doc -10- 201235287 550 is about 120 from each other. Interspersed. The actuator device 400 can have any desired number of actuators 55A disposed in any desired pattern. As a further example, the actuator device 400 can have a spacing of about 180 from each other. The two actuators 550' may alternatively have a spacing of about 9 inches from each other. The four actuators are 550. As discussed herein, the actuators 550 can include one or more MEMS actuators, hammer actuators, or any other desired type or combination of types of actuators. For example, in one embodiment, each actuator 550 can be a vertically rotating comb drive. The actuators 550 can cooperate with each other to move a platform 520 along the optical axis 410 (Fig. 3B) that is perpendicular to the plane of the actuator device 4A in Fig. 5A. The actuators 55A can cooperate with one another to move the platform 52A in a manner that maintains the platform 52's substantially perpendicular to the optical axis 410 and substantially reduces the rotation of the platform. Actuation of the actuators 55A is accomplished by a voltage differential applied between adjacent teeth 560 (represented by block 552). This actuation effects the rotation of the actuators 550 to facilitate movement of the platform 520 described herein. In the case of a fine example, the platform 52 can be adapted to be substantially a ring (e.g., as shown in Figure 5A). Other shapes are expected. The platform 52 can have any desired shape. Prior to deployment, the actuator device can be an up-to-up flat structure. For example, the actuator device 4 can be formed substantially from a single, single piece of material, such as Shi Xi. The sig- gg 7 formed the actuator device 400 from an early morning die. The crystal grain can be, for example, about 4 至 宴 刘 刘 · 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 垮 Doc -11 - 201235287 meters thick. The actuator device 400 can be formed by a MEMS technique, such as milling or silver engraving. A plurality of actuator devices 400 can be formed on a single wafer. The overall shape or footprint of the actuator assembly 400 can be adapted to enhance the formation of a plurality of actuator devices 400 on a single wafer. Prior to operation, according to an embodiment, the fixed frame 5 17 of each actuator 55 can be deployed to offset the pair of adjacent teeth 560 represented by the block 552 with respect to each other. Unfolding can result in a substantially non-flat & body configuration of the actuator device 400. When deployed, each actuator 5050 can have a portion (e.g., the fixed frame 517) that extends from the plane of the outer frame 506. The fixed frame 517 can extend from a plane of the outer frame 506 at an angle relative to one of the faces. Thus, when deployed, the fixed frame 517 can be substantially out of plane with respect to the outer frame 506. Once deployed, the fixed frames 5 17 can be fixed or locked to a position 'such that (when the actuator 550 is not actuated) the fixed frames 517 are not moved further relative to the outer frame 506' and relative to The outer frame 506 is angularly offset or rotated relative to the movable frame 5〇5. The fixed frames 5 17 can be mechanically fixed to a position that is adhesively bonded to the 疋 position or any desired combination of mechanically and adhesively joined. Actuation of the actuator 550 can cause the movable frame 505 to rotate toward the unfolded fixed frame. Rack 5 17, to achieve the desired movement of the platform 520. The motion control torsional deflection 5 15 and the external pivot flex 5 16 cooperate to facilitate the rotation of the motion control of the movable frame 505 as discussed herein. The moveable pivot 505 is rotated about the pivot axis 525. 159976. Doc -12 201235287 Figure 5B illustrates a top view of the actuator device 4A having teeth 56 展示 shown in the actuator 550 in place of the block 552, in accordance with an embodiment. For the sake of clarity, the teeth 56 展示 shown in Figure 5B can be considered to be reduced in number ' and exaggerated in size. Figure 6A% shows a top view of one of the actuators 55' according to an embodiment having the internal pivot flexes 〇1, the ball socket reducers 513, the δ mystical movable frame 5〇5, the outer pivot flex 516, the motion control torsional flexure 5 15, the cantilever flexure 514, the fixed frame 517, the pivot axis 525, the serpentine contact deflection 5〇8, the pseudo The kinematic mounting and electrical contacts 404, and the platform 520. Figure 6A further illustrates a lateral reducer assembly 1001' which is further described herein. The inner pivot flex 501 cooperates with the cantilever flexure 514 to convey the desired motion from the movable frame 505 to the platform 520. Thus, actuation of the actuator 550 causes rotation of the movable frame 5〇5, which in turn causes translation of the platform 520 as discussed herein. The movable frame 505 can be rotated on the outer pivot flex 516 in a manner similar to the rotation of a door on its button. Upon application of a shear force to the 5 liter actuator assembly 4, one of the two outer pivot flex 516 of the actuator 550 can be in tension while the outer pivot flex 516 can be in compression in. The two motion control torsional flexures 5丨5 tend to mitigate the undesirable buckling of the outer pivot flex 516 in such situations. Each actuator can be placed substantially in a motion control mechanism that provides relatively high lateral stiffness and relatively soft rotational stiffness. In an embodiment, the motion control mechanism can have one or more (eg, two) external pivots 159976. Doc -13· 201235287 516 ' and may have one or more (eg, two) motion control torsional flexures 515. Therefore, the movement of the movable frame 5〇5 can be substantially constrained by its desired rotation. In an embodiment, the motion control mechanism for the actuator 550 can include the outer frame 506, the movable frame 5〇5, the #motion control torsion deflection 515', the external pivot flex 516, the interiors The pivot flex 501, the cantilever flexure 514, and the platform 52〇. In one embodiment the motion control mechanism can include all of the structures that tend to limit the movement of the platform 520 to the desired translational movement. According to an embodiment, each actuator 55A may be substantially included in the motion control mechanism to substantially limit the competition of the footprint on the actuator device 4. Because each actuator 55 and its associated motion control mechanism substantially occupy the same surface area of the actuator device 400, it does not compete for area. Thus, as the actuator 550 increases in size, its associated motion control mechanism can also increase in size. In certain embodiments, it is desirable to increase the size of the actuator 550 to thereby increase the force provided by it. In some embodiments, it is also desirable to increase the size of the motion control mechanism to maintain its ability to desirably limit the movement of the platform 52A. The movable frame 5〇5 can be considered as part of the motion control mechanism. 6B illustrates an actuator 550 that is shown shaded for clarity for clarity. The shadow mount frame 517 can be deployed to a position outside the plane of the actuator device 400, and can be Fixed in this expanded position. The movable frame 505 can support a moving portion of the actuator 550, such as 159976. Doc 14 201235287 Some teeth 560 (see Fig. 7) ^ The fixed frame 517 can support a fixed portion of the actuator 55, such as other teeth 560 (see Fig. 7). Applying a voltage to the actuator 550 causes the movable frame 505 to rotate about the outer hinge flex 516 toward the fixed frame 517. The removal or reduction of the voltage may allow for a spring force applied by the inner pivot flex 514, the outer pivot flex 516, and the motion control torsional flex 515 to move the movable frame 5〇5 from The solid frame 517 is rotated. The movable frame 505 and the fixed frame 517 provide sufficient clearance to accommodate this desired movement. Figure 6C illustrates a portion of a platform 52A having a radial variation 571, in accordance with an embodiment. In one embodiment, the radial variations 571 can be formed in the platform 520 to allow the platform 52 to expand. The radial variations 571 can be angularly curved in the platform 520. Thus, an optical component, such as the movable lens 301, can be inserted into the opening 405 of the platform 520, the opening 405 can be expanded to accommodate the movable lens 3〇1, and the opening 4〇5 can clamp the The lens 301 is movable. The opening 405 can expand (e.g., tend to straighten) as the platform 52(R) deforms from the change 571 to increase the circumference of the opening 405. 6D illustrates a perspective view of a movable lens that is placed for mounting to the actuator device 400, and FIG. 6 illustrates the movable attachment to the actuator device 400 in accordance with an embodiment. A side view of the lens 3〇1. In one embodiment, the movable lens 301 is adhesively bonded to the platform 52, such as by adhesively engaging the holder 522 of the movable lens 3〇1 to the lens pads 521. For example, epoxy 523 can be used to adhesively bond the movable lens 301 to the platform 52A. The movable lens 3〇1 can be obtained by the 159976. Doc 201235287 Lens spacer 521 support. FIG. 7 illustrates a portion of an actuator 550 showing a block 552 superimposed on a tooth 560 of an actuator 550, in accordance with an embodiment. As discussed herein, the blocks 552 represent teeth 560. FIG. 8 illustrates a bottom perspective view of the actuator assembly 400 in an expanded configuration, in accordance with an embodiment. In the deployed configuration, the unactuated movable frame 505 is in a plane with respect to the outer frame 506, and the unfolded solid frame 5 17 is opposite the outer frame 506 and the movable frame 505. It is essentially out of plane. Applying to the actuator 550 via the electrical contact 404 ^, for example, both of the three contacts 4 〇 4 can be used to apply a voltage from the lens barrel 200 to the actuator device 4〇〇. The third contact 404 may not be used or may be used to redundantly apply a polarity of the voltage from the lens barrel 2 to the actuator device 4A. Substantially the same voltage can be applied to the three actuators 55A to cause them to move the frame 505 substantially the same. Applying substantially the same voltage to the three actuators 550 can cause translation of the platform 520 relative to the outer frame 506 such that the platform 52A remains substantially parallel to the outer frame 506. Thus, as an optical component moves, the optical component, such as the movable lens 301, can be held in alignment, such as along one of its optical axes 41 (Fig. 3B). Different voltages across the mass can be applied to the three actuators 55A to cause them to move the differently different movements of the frame 505. Using the three contacts 404 and a common return line (comm〇n return), substantially different voltages 159976. Doc •16- 201235287 can be applied to the three actuators 550. Thus, each contact 4〇4 can apply a separately controlled voltage to one of the three actuators 550. Applying a different voltage across the three actuators 550 can result in translation of the platform 520 relative to the outer frame 5〇6 such that the platform is substantially tilted relative to the outer frame 506. Thus, when substantially different voltages are applied, the platform 52 does not necessarily have to remain substantially parallel to the outer frame. Applying different voltages to the three actuators 55 can be used, for example, to align the platform 520 with the outer frame 5〇6. Applying different voltages to the three actuation benefits 550 can be used to facilitate, for example, optical image stabilization or lens alignment. Figure 9A illustrates a portion of an actuator device 4A in an unfolded configuration that is not applied with any voltage, in accordance with an embodiment. No voltage is applied to the actuating beta device 400, the movable frame 5〇5 is substantially in a plane relative to the outer frame, and the unfolding fixed frame 517 is opposite the outer frame 506 and the movable frame 5〇 5 and substantially outside the plane. Figure 9 depicts a portion of an actuator device 4A that is unexpanded and applied with a small voltage, not according to an embodiment. As a small voltage is applied, the movable frame 505 is rotated toward the deployment frame 517 and is in a partially actuated position. Figure 9C is a continuation of a portion of the actuator assembly 400 in a one-door configuration that is applied to a maximum electrical house. As can be seen, the movable frame: 505 Progress% turns toward the deployment frame η? and is in the -complete position. Figure 10 is a top plan view of one of the lateral reducer assemblies 1001 in accordance with the embodiment. The horizontal reduction broadcast f cry A丄 Xuan Thio, · Xincheng 1001 can have a first reducer component 159976. Doc • 17· 201235287 1002 and a second reducer member 1003. The first damper member 1002 can be formed on the fixed frame 517, and the second damper member can be formed on the movable frame 505. The first damper member 1〇〇2 and the second damper member 030 can cooperate to inhibit the movable frame 505 relative to the fixed frame 517 during impact or greater acceleration (and thus also Undesirable lateral motion of the outer frame 506). A gap "〇" between the first damper member 1002 and the second damper member 1 〇〇 3 can be about 2 microns to 3 microns wide to limit this undesirable lateral movement. 11 is a perspective view of the motion control torsional flexure 5丨5 and the outer hub: flex 516, in accordance with an embodiment. The motion control torsional flexure 515 and the outer pole flex 516 can be thinner than other portions of the actuator assembly 400 to provide the desired stiffness of the motion controlled torsional flexure 515 and the outer pivot flex 516. For example, in an embodiment, the outer pivot flex 516, the inner pivot flex 510, and the motion control torsional flex 515 can have a width of about 100 microns and a width of about 2 microns to 3 microns. a thickness. The motion control torsion deflection 515 can be located on the pivot axis 525. In one embodiment, the pivot axis 525 is coupled to a line of the center of the two outer pivot flex 516. In one embodiment, the pivot axis 525 is a hinge or shaft about which the movable frame 506 rotates. Figure 12 is a perspective view of one of the internal pivot flexes 5 根据 in accordance with an embodiment. The inner pivot flex 501 can be more 溥 than the other portions of the actuator assembly 4 to provide the desired rigidity of the inner pivot flex 501. For example, in one embodiment the internal pivot flex 501 can be about 5 microns long, 6 microns wide, and 2 microns to 3 microns thick. 159976. Doc • 18· 201235287 Figure 13 illustrates a perspective view of a cantilever deflection 5i4 according to an embodiment having the internal pivot flex 5 〇 1 , a first thin section 13 〇 1, a thicker area & 1302 and a second thin section 13〇3. The cantilever deflection 514 can be used to transfer movement of the movable frame 5〇5 to the platform 52. The cantilever deflection 514 can be used to facilitate conversion of the rotation of the movable frame 5〇5 to the platform 520. Translation. The inner pivot flex 501 can be bent as the platform 52 translates to allow the movable frame 505 to rotate. As the movable frame 5〇5 transfers the movement to the child platform 520, the 3H first thin section 13〇1 and the second thin section 13〇3 may be bent to allow the movable frame 5〇5 and A change in the distance between the platform 52〇. The cantilever deflection 514 can be thinner immediately adjacent its end and can be thicker immediately adjacent its center. This configuration determines the stiffness of the desired ratio of one of the cantilever deflections 514. For example, it may be desirable to have a lower stiffness as the movable frame 505 transmits movement to the platform 52, which radially compensates for changes in the distance between the movable frame 505 and the platform 520. . 14 is a perspective view of one of serpentine contact flexure 5〇8 and unfolding torsional flexure 509, in accordance with an embodiment. The serpentine contact flexure 5〇8 facilitates electrical contact between the electrical contacts 404 and the deployment frame. The unfolding twist flex 509 can facilitate rotation of the deployment frame 517 relative to the outer frame 506 during deployment. Figure 15 illustrates a perspective top view of one of the deployment stops 51, according to an embodiment, which does not contact an outer frame 506 on the top side when deployed improperly. Epoxy resin 15〇1 can be applied to the expansion 159976. Doc 201235287 The stop member 510 and the top surface of the outer frame 506 are fixed to the fixed position 51 相对 relative to the outer frame 506. Therefore, the epoxy resin 1 501 can fix the deployment fixing frame 517 to a certain position with respect to the outer frame 5〇6. A variety of positions of the deployment frame 517 can be used as the deployment stop 510. For example, when the deployment frame is unfolded, other portions of the deployment frame 517 adjacent to the outer frame 506 can be used as the deployment stop 510. Figure 16 illustrates a perspective bottom view of the deployment stop 51 in accordance with an embodiment. This figure shows the deployment stop 5 i 〇 contacting the outer frame 506 on the bottom side when deployed. The epoxy resin 1501 can be applied to the deployment stopper 510 and the bottom surface of the outer frame 506 to fix the deployment stopper 51 θ to a fixed position relative to the outer frame 506. If desired, the epoxy tree 曰15 01 can be applied to both the deployment stop 51 〇 and the top and bottom surfaces of the outer frame 5 〇 6 . Figure 17A illustrates a perspective view of a diaphragm damper 5A, in accordance with an embodiment. The diaphragm damper 511 is located at a slightly lower relative motion required during the intended operation (e.g., actuation) of the actuator 550 and a slightly higher potential relative motion during the impact. For example, the diaphragm damper 511 can be formed on the pivot shaft 525. A damping material 1701 can extend across a gap 1702 formed between the outer frame 506 and the movable frame 5〇5. The damping material 17〇1 can have a higher damping coefficient. For example, in an embodiment, the damping material 17〇1 may have a value of 0. 7 and 0. A damping coefficient between 9. For example, the damping material 1701 can have about 0. A damping coefficient of 8. In one embodiment the damping I59976. Doc •20- 201235287 Material 1701 can be epoxy. The damping material 17G1 can easily allow the desired movement of the movable frame (4) 5 relative to the outer frame 506. The damping material 17〇1 suppresses undesired movement of the movable frame 505 relative to the outer frame 5〇6 due to an impact. Thus, during actuation of the actuators 55A, the damping material 1701 can permit rotation of the movable frame 5〇5 relative to the outer frame 5〇6, and during the impact, the damping material 1701 can Lateral movement and/or out-of-plane motion of the movable frame 505 relative to the outer frame 5〇6 is inhibited. The diaphragm damper 511 can have a diaphragm 1706 extending from the movable frame 505 and can have a diaphragm 1707 extending from the outer frame 506. A gap 17〇2 may be formed between the vibration month 1706 and the diaphragm 1707. An extension portion 1708 can extend from the diaphragm 17A, and/or an extension portion 09 can extend from the diaphragm 17A. The extension portion 17A and the extension portion 09 extend the length of the gap 17〇2 such that more resistive material 1701 than would be possible without the extension portion 1708 and/or the extension portion 17〇9 can be used. A gap 1719 may be formed in the diaphragms 17〇6 and/or 17〇7, and a gap material 172〇 different from the material of the isolators 1706 and 1707 may be deposited in the gaps 1719. For example, the equalizing plates 17〇6 and 17〇7 may be formed of a single crystal germanium, and the gap material 1720 may be formed of polycrystalline germanium. For the equalizing plates 1706 and 1707 and for the gap material 172, any desired one may be used. The materials are combined to achieve the desired rigidity of the diaphragms 17〇6 and 17〇7. Figure 17B illustrates the placement of the higher 159976 under an impact that is not applied thereto. Doc -21 - 201235287 The movable cover 5〇5 between the module cover 40 and the lower module cover 402. In the absence of an impact, the movable frame 505 remains in its unactuated position and the external pivot flex 5 丨 6 does not bend. 17C illustrates the movable frame 5〇5 after the movable frame 505 has been moved from an impact to a position against the lower module cover 402 of the 3H, such as may be caused by the electronic device 100. drop. The movement of the movable frame 505 can be limited or reduced by the lower module housing 4〇2, and thereby the undesired double bending of the outer hinge flex 516 can be limited. In a similar manner, the taller module housing 401 can limit the movement of the movable frame 5〇5 and the double bending of the outer hinge flex 516. Thus, the undesirable pressure within the external pivot flex 516 can be mitigated. Figures 17D through 17B illustrate an alternate embodiment of an external pivot flex 1752. As shown in these figures, in some embodiments, the external interposer flexure 1752 can be X-shaped to increase motion control of the movable frame 5〇5 in the lateral direction. The outer pivot flex 516, 1752 can generally tend to bend, such as about a central portion thereof, to facilitate movement of the movable frame 505 relative to the outer frame 5〇6. Other shapes are expected. For example, the outer pivot flex 1752 can be formed as a H'bM'N'V, W, Y shape, or can have any other desired shape. Each outer spline bend 1752 can include any desired number of structures interconnected with the outer frame 5〇6 and the movable frame 5〇5. The structures may or may not be interconnected. The structures may be substantially identical with respect to each other or may be substantially different relative to each other. Each outer pivot flex 1752 can be substantially identical with respect to each of the other pivot flexes 1752, or can be flexed relative to other pivots 159,976. Doc •22· 201235287 The song 1752 is substantially different. The outer pivot flex 516 1752 and any other structure can be formed by etching as discussed herein. The external pivot flex and any other structure may comprise any combination of single crystal germanium, polycrystalline germanium, or the like. 17D-17F and 171-17N illustrate an alternate embodiment of a lateral reducer assembly 1754, and another embodiment that does not use a lateral reducer assembly is referenced to FIG. 10 herein. The transverse reducer assembly 1754 of Figures 17D-17F and 171 through i7N generally has more circular curves relative to the transverse reducer assembly 1001 of Figure 1A. 17D-17F illustrate one useful for constraining a component (eg, 'movable component 505') in vertical movement in the tZ direction and its lateral movement (ie, in the soil X and/or the Y direction). One of the interlocking reducer diaphragm features 1756 replaces the fine example. As seen in the cross-sectional views of Figures 17K, 17L and 17N, the structure of the interlocking diaphragm feature 1756 and its method of formation are similar to the structure and method of the interlocking diaphragm feature 5000 discussed below in connection with Figures 49-53. As shown in FIG. 17F, the interlocking diaphragm feature includes forming a pair of diaphragms 1756A and 1756B that extend from the movable assembly 505 and the stationary assembly 506 and are formed in another relative, respectively. A corresponding shoulder 1762 extends over the assembly. The diaphragm 1756 on the movable component 5〇8 limits the movement of the movable component 505 in the -Z direction, and the diaphragm 1756B on the fixed component 506 limits the movable component 5〇5 to + Movement in 2 directions. Furthermore, as shown in FIG. 17K'FIG. 17L and FIG. 17N, the gap 1760 between the two components 505 and 506 (which may be formed as discussed below in connection with FIGS. 49A-49F) may limit the movable Component 5〇5 is ±χ and / or ±丫方159976. Doc -23- 201235287 Upward movement. As shown in Figure 17M, the respective front and rear ends of the isolating plates 1756A and 1756B can be bounded at their opposite ends, and one or more of the corners can be incorporated into the elliptical caulk 1766. As shown in Figures 17D-17L and 17K-17N, a single-subtractor diaphragm 1758' can be provided for constraining the gamma component in the actuator device 175A (eg, the movable component 5) 〇 5) The lateral movement. For example, the damper diaphragm 1758 (which may include polysilicon in some embodiments) may extend from a fixed piece (eg, component 5〇6) and toward the movable component 5〇5 but does not extend over it To limit the movement of the movable component 5〇5 in the lateral direction (i.e., in the soil and/or soil Y direction). As shown in FIG. 17A and FIG. 17L and FIG. 7N, the gap 1764 between the fixing component 506 and the movable component 505 can be used to make an ia·ground ratio 3 Xuan reducer diaphragm 1758 and the movable component 5〇5. The gap 1768 is relatively large such that the damper diaphragm 1758 does not interfere with the normal rotational motion of the movable assembly 505, but does function to prevent undesired lateral movement. FIG. 18 illustrates a ball socket reducer 513 in accordance with an embodiment. The ball bearing reducer 513 can have a substantially cylindrical ball 518 that is slidably disposed within the complementary cylindrical socket 519. The ball socket reducer 513 allows the platform 520 to move relative to the outer frame 506 and limit other movements. Figure 19 depicts a perspective view of a ball write 513 and two frame hinges 526, in accordance with an embodiment. The frame hubs 526 can be pivoted in a hub that is otherwise substantially rigid in the outer frame 506. The frame hub 526 allows the 159976. Doc -24· 201235287 The outer frame 506 deforms out of plane while maintaining the desired stiffness in the plane. Referring to Figures 20 through 31, electrical windings and contacts are provided through the kinematically mounted flexure 502 in accordance with several embodiments. This electrical winding can be used to conduct electricity from the lens barrel 200 to the actuator device 4 to, for example, facilitate focusing, zooming, and/or optical image stabilization. 20 depicts a top view of a kinematic mounting flexure 502 having electrical contacts 4 (M) formed thereto, which may be formed, for example, to an actuator device 4, according to an embodiment. An outer frame 5〇6 of the crucible. A polysilicon trench 2001 can be formed in the kinematic mounting flexures 5〇2 and a polysilicon trench 2002 can be formed in the electrical contacts 4〇4. As discussed herein, The kinematic mounting flexures 502 and the electrical contacts 4A4 can include a single crystal substrate 2211 (Figs. 22 and 23) having a layer of polycrystalline germanium 2008 (Figs. 22 and 23) formed thereon. In the example, the single crystal substrate 2211 can be electrically isolated from the polycrystalline silicon to facilitate the communication of different voltages. For example, the single crystal substrate 2211 can be used to communicate a voltage to the actuator. 55〇, and the polycrystalline stone 2008 can be used to communicate another voltage to the same actuator 55〇 to effect its actuation. In some embodiments, at least some portions of the pre-crystal substrate 2 211 can be The polysilicon 矽 2008 is electrically connected to facilitate the voltage transfer between it and the like. For example, one or The single crystal substrate 2211 and the polycrystalline stone 2008 of the electrical contacts 404 can be in electrical communication with each other such that the top of the electrical contacts 4〇4 (polycrystalline germanium 2008) or the bottom (single crystal substrate 22Π) can have the same effect. An electric company 159976. Doc - 25 - 201235287 The polycrystalline trenches 2001 may be formed substantially at the center of each of the kinematic mounting flexes 052 and may, for example, be substantially perpendicular to one of the kinematic mounting flexures 502 form. The polysilicon trenches 2〇〇1 may be adapted such that the polycrystalline germanium trenches 2001 are adapted to the single crystal substrate 2211 of the kinematically mounted flexure 502 on one side of the polysilicon trench 2〇〇1 The single crystal substrate 2211 of the kinematically mounted flexure 502 on the other side of the spar trench 2001 is electrically isolated. For example, the polycrystalline whiskers 2001 can extend completely through the kinematic mounting flexures 502 and completely across the kinematic mounting flexures 502. Thus, in one embodiment, the electrical contact (e.g., application of an electrical delay) of the single crystal substrate 2211 of the kinematically mounted buckling 502 on one side of the polycrystalline ridge trench 2001 does not substantially affect the The kinematically mounted single crystal substrate 2211 of the flexure 502 on the other side of the polycrystalline ridge trench 2001. In this manner, the desired electrogrind delivery for actuating the actuators 55 can be provided. For example, a voltage may be applied to an electrical contact 4〇4 and may be delivered to the actuator 550' via a polysilicon 2008 formed on the actuator device 400 and may be formed with the actuator device 4 The single crystal substrate 2211 of the crucible is isolated. The polysilicon trenches 2001 prevent a voltage short circuit applied to the electrical contacts 404 relative to the single crystal substrate 2211 of the actuator device 4''. The kinematic mounting flexures 502 can be mechanically continuous. Accordingly, the kinematic mounting flex 502 can facilitate mounting of the actuator device 400 to a lens barrel 200, such as discussed herein. 159976. Doc -26-201235287 may form the polysilicon trenches 2〇〇2 in the electrical contacts 404 to provide electrical communication through the electrical contacts 404. Therefore, a voltage applied to one side of the electrical contact 404 can be supplied to the other side of the electrical contact 4〇4. Any desired number of polysilicon trenches 2002 can be formed in the electrical contacts 404. The use of such gaps 2001 and 2002 provides substantial flexibility in voltage delivery, such as through the actuator device 4, for example, to actuate its actuator 550. The use of a polysilicon having a penetration thickness (top to bottom) or a trench 2002 filling another conductive material 2008 provides flexibility in the delivery of voltage from one surface of the actuator device 400 to the other surface thereof. These slots 2002' can be used at any desired location and are not limited to locations to the electrical contacts 404. 21 illustrates a kinematic mounting flexure 5 〇 2 ^ in accordance with an embodiment of the present invention, a single polysilicon trench 2002 can be formed in the electrical contact 404 such that the polysilicon trench 2002 extends completely through the electrical contact 404. And does not completely span the electrical contact 404 (eg, such that the polysilicon trench 2002 does not separate the electrical contact 404 into two electrically isolated portions). The polysilicon trench 2〇〇2 can be used to provide electrical communication between the surfaces of the electrical contacts. For example, the polysilicon trench 2002 can be used to provide electrical communication between a top surface 2003 and a bottom surface 2004 of the electrical contact 404. 22 depicts a section of kinematic mounting flexure 502 taken along line 22 of FIG. 21, in accordance with an embodiment. The polysilicon trench 2001 formed in the single crystal substrate 2211 may have an oxide layer 2?7 formed thereon. The polycrystalline stone 2008 may be formed on the oxide layer 2007. In an embodiment, the 159976. Doc -27-201235287 The single crystal substrate 2211 of the kinematically mounted flexure 502 can be formed from doped single crystals' and the polycrystalline germanium 2008 can be formed from a doped polycrystalline crumb. Thus, the single crystal substrate 2211 of the kinematically mounted flex 502 and the polycrystalline spine of the kinematically mounted flex 502 can be simultaneously at least partially electrically conductive and can be used to deliver voltage (such as to The oxide layer 2007 allows the polysilicon layer 2008 to be electrically isolated from the single crystal substrate 2211 of the kinematically mounted flexure 5〇2. An undercut 2011 can be formed in the trench 2〇〇1 by removing a portion of the oxide layer 2007. This portion of the oxide layer 2007 can be removed, for example, during an etching process. Figure 23 illustrates a cross-section of an electrical contact taken along line 23 of Figure 21, in accordance with an embodiment. The polysilicon trench 2002 can have an oxide layer 2007 formed thereon. The polycrystalline stone eve 2008 can be formed on the oxide layer 2〇〇7. The electrical contacts 404 can be formed from doped single crystal polysilicon and the polycrystalline germanium 2008 can be formed from doped polysilicon. Thus, the electrical contacts 4〇4 and the polysilicon 2008 can be at least partially electrically conductive and can be used to deliver voltage. The oxide layer 2007 can be used to electrically isolate the polycrystalline stone 2008 from the electrical contact 404. A metal contact pad 2009 can be in electrical communication with both the polysilicon germanium 2008 and the single crystal germanium 2211. Thus, the metal contact pad 2009 can be used to apply a voltage to both surfaces (top and bottom surfaces) of the electrical contact 404. The use of the trenches 2001 and 2002 allows the use of metal contact pads 2009 on either side of the electrical contacts 404. Thus, the use of the trenches 2001 and 2002 enhances the flexibility to provide voltage to the actuator device 400. . By removing a portion of the oxide layer 2007, it can be 159,976 in the gap 2002. Doc -28· 201235287 Form an undercut 2011. A portion of the oxide layer 2007 can be removed, for example, during an etching process. Figure 24 illustrates a kinematic mounting flexure 502' in which no polysilicon trenches 2"1 are formed and an electrical contact 404 in which no polysilicon trenches 2"2 are formed, in accordance with an embodiment. Thus, for example, the single crystal germanium substrate 2211 (see Fig. 25) is electrically continuous and mechanically continuous. According to an embodiment, any desired surface (e.g., 'top or bottom surface') of the electrical contact 404 can be electrically connected. Figure 25 depicts a cross section of the electrical contact taken along line 25 of Figure 24, in accordance with an embodiment. The single crystal germanium substrate 2211 is, for example, electrically continuous and mechanically continuous because the polycrystalline germanium gap 2〇〇2 is not formed therein. Figure 26 illustrates a kinematic mounting flex 502 having the electrical contact 4〇4, in accordance with an embodiment. A polysilicon layer 2701 can be formed on the kinematic mounting flex 502 and/or the electrical contacts 404. The polysilicon layer 2701 can provide electrical communication, for example, from the electrical contacts 404 to the actuators 550. Figure 27 illustrates a cross section of the electrical contact taken along line 27 of Figure 26, in accordance with an embodiment. The polysilicon layer 2701' may be formed on an oxide layer 2702 to, for example, electrically isolate the polysilicon layer 2701 from a single crystal substrate 2703. Therefore, an electrical connection for providing a voltage to the polysilicon layer 2701 can be made via the top of the electrical contact 404, and a different voltage can be supplied to the single crystal substrate 2703 via the bottom of the electrical contact 4? Electrical connection. 28 depicts a cross section of electrical contact 4〇4 taken along line 28 of FIG. The polysilicon layer 2701 can extend over the top surface of the electrical contact 4〇4 and down along at least one side thereof. The polysilicon layer 2701 can be electrically isolated from the single crystal substrate 27A by the oxide layer 2702. Available at 159976. Doc -29- 201235287 A portion of the oxide layer 2702 is etched during processing to form an undercut 2801. A metal contact pad 2802 can be formed to the single crystal substrate 2703 to facilitate electrical contact therewith. FIG. 29 illustrates a kinematic mounting flex 502 having the electrical contact 404 in accordance with an embodiment. The electrical contact 404 and the kinematic mounting flex 502 can facilitate mounting of the actuator device 400 within a lens barrel 200 such as discussed herein. The electrical contact 404 and the kinematic mounting flex 502 can facilitate electrical communication between the lens barrel and the actuator 550 of the actuator device as discussed herein. The flexures 502 can, for example, accommodate the imperfections or tolerances of the actuator device 400 and/or the lens barrel 200, while mitigating the pressure on the actuator device 400 resulting from such enthalpy. An actuator device 400 having a kinematic mounting flex 502 is provided in accordance with an embodiment. The hatched portion of the actuator device 400 shown in Fig. 30 indicates where the top layer of the polysilicon layer 2701 can be formed in a continuous embodiment in which the polysilicon layer 2701 is continuous between all three actuators 550. Thus, a single electrical signal (e.g., voltage) can be readily applied to all three actuators 550 to achieve substantially identical and substantially simultaneous control thereof. That is, the three actuators 550 can tend to move substantially in unison relative to one another in response to the single electrical signal. FIG. 31 illustrates an actuator device 400 having a kinematic mounting flex 502, in accordance with an embodiment. The hatched section of the actuator device 400 shown in FIG. 31 indicates where the top layer of the polysilicon layer 2701 can be formed in an embodiment in which the polysilicon layer 2701 is discontinuous between all three actuators 550. At the office. Therefore, separate electrical signals (e.g., voltage) can be easily applied independently to the 159976. Doc -30· 201235287 Each of the actuators 550 to achieve substantially independent control thereof. That is, the three actuators 550 can be controlled to move substantially non-harmonically with respect to one another in response to different electrical signals. Referring to Figures 32 through 58, a method of separating structures, such as MEMS structures, in accordance with several embodiments is discussed. For example, a separate structure can be used to provide mechanical isolation and/or electrical isolation thereof, such as for the actuator device. Structures made of the same material can be separated from one another. Structures made of different materials can be separated from one another. The structures can be separated to promote relative motion to each other. The structure can be separated to define the desired device or structure by discarding a separate structure. The structure can be separated to allow for different voltages at each structure. Figures 32 through 48 illustrate a cross-section of an embodiment for forming a type of separation structure. Figures 49-56 illustrate an example of an embodiment for forming another type of separation structure. 57 and 58 illustrate an example of the use of a separate structure in the manufacture of the actuator device 400. Figure 32 illustrates a perspective view of a substrate 3202 having a trench 32〇 formed therein in accordance with an embodiment. The substrate 32〇2 can be a first semiconductor material. For example, the substrate 3202 can be a single crystal germanium. The substrate 32〇2 can be any desired type of semiconductor material. The substrate 32〇2 can be a non-semiconductor material such as a metal. The gap 3201 can have a narrower portion or pinch portion 3203 formed therein. The gap 3201 can be etched into the substrate 32〇2. For example, a deep reactive ion etching (DRIE) procedure can be used to form the trench 32 〇. Examples of the DRIE procedure are disclosed in U.S. Patent Application Serial No. 11/365,047, filed on Feb. 28, 2002, and filed on Apr. 12, 2007. Doc-31 - 201235287, No. 11/734,700, the entire contents of each of which is incorporated herein by reference. In one embodiment, the gap 3201 can be a halfway etched from the top of the substrate 3202 to its bottom. In another embodiment, the trench 32〇丨 can be completely etched through the substrate 32〇2 (eg, from the top of the substrate 32〇2 to the bottom thereof). FIG. 36 shows the gap 32〇1 from The top of the substrate 3202 is etched to the bottom half of its bottom. As discussed herein, one of the bottom portions 3501 (see Figure 39) of the substrate 3202 can be removed during subsequent processing, the gap 3201 not extending through the bottom portion. The slot 32〇1 can have any desired length. The gap 3201 and any other gaps discussed herein can be locally etched, such as via the DRIE procedure. 33 illustrates a top view of a substrate 3202 having a trench 3201 in which a pinch portion 3203 is formed, in accordance with an embodiment. A gap 3205 can be defined by the pinch portion 3203. The pinch portion 3203 can be formed on either or both sides of the slot 3201. The gap 32〇5 can be defined as a portion of the gap 32〇1 that is narrower than the adjacent portion of the gap 3 2 01. Figure 34 illustrates a cross-sectional view of a substrate 32A having a gap 32〇1 in which a pinch 32〇3 is formed, in accordance with an embodiment. The cross-sectional view of Figure 34 is taken along line 34 of Figure 33. As can be seen, the gap 32〇1 (including the gap 32〇5) tapers slightly from top to bottom. A taper angle "" can be caused by the DRIE procedure when the gap 3201 is touched into the s-substrate 3202. In an embodiment, the taper angle "I" may be less than one degree. For example, the taper angle "L can be about 0. From 6 degrees to about 0. 8 degrees. For the sake of clarity, the cone angle "I" is exaggerated in the figure. 159976. Doc-32·201235287 FIG. 3 is a cross-sectional view showing a substrate 3202 having a gap 3201 according to a conventional embodiment, in which a pinch portion 32〇3 is formed. Figure 35 is a cross-sectional view taken along line 35 of Figure 33. A bottom portion 3501 of the substrate 3202 is defined beyond the bottom of the slot 3201. The bottom portion 3501 can be removed during subsequent processing such that after removal, the gap 32〇1 extends completely through the substrate 3202. • Figure 36 illustrates a perspective view of a substrate 3202 having a layer of oxide layer 3601 formed within the trench 3 2 01, in accordance with an embodiment. The oxide layer 36〇1 may, for example, comprise hafnium oxide. In one embodiment, the oxide layer 36 can be formed by a thermal growth process, in which case the thermal growth process consumes some of the substrate 3002. The oxide layer 3601 can substantially fill the void 3205 (see Figure 33). The oxide layer 3601 can completely fill the void 32〇5. By filling the voids 3205, the oxide layer 3601 facilitates the separation of a subsequently formed polycrystalline germanium material into its two separate portions. Figure 37 illustrates a top view of a substrate 3202 having an oxide layer 36A1 formed therein, in accordance with an embodiment. As can be seen, the oxide 36〇1 defines four regions. The tantalum oxide layer 3601 separates the substrate 3202 into two regions, and separates the "ditch gap 3201 into two regions (each of which may be filled with polysilicon or any other material), as discussed in further detail herein. . Figure 38 illustrates a carrier view of a substrate 3202 having an oxide layer 36〇 formed therein, in accordance with an embodiment. The cross-sectional view of Fig. 38 is taken up along the line of Fig. 37. Figure 39 illustrates a cross-sectional view of a substrate 3202 having an oxide layer 36〇 formed therein, in accordance with an embodiment. The cross-sectional view of Figure 39 is taken along line 39 of Figure 37. As discussed herein, the 159976 of the substrate 32〇2 can be removed during subsequent processing. Doc-33-201235287 A bottom portion 3501 such that the gap 3201 will then extend completely through the substrate 3202. 40 illustrates a perspective view of a substrate 3202 having a second semiconductor material (such as a polysilicon 4001) formed over an oxide layer 3601, in accordance with an embodiment. Therefore, the substrate 3202 and the material filling the trench 3201 may include a first semiconductor material and a second semiconductor material. The first semiconductor material and the second semiconductor material can be the same semiconductor material or can be different semiconductor materials. The first semiconductor material and the second semiconductor material can be any desired semiconductor material. Non-semiconductor materials as discussed herein can be used. 41 is a top plan view of a substrate 3202 having a polycrystalline spine formed on an oxide layer 3601 according to an embodiment identical to that of FIG. 38. 42 illustrates a cross-sectional view of a substrate 3202 having a polysilicon layer formed on an oxide layer 3 601, in accordance with an embodiment. For the sake of clarity, the cone angle "I" shown can be exaggerated. Figure 43 illustrates a cross-sectional view of a substrate 3202 having polysilicon formed on an oxide layer 3601, in accordance with an embodiment. Figure 44 is a perspective view of a substrate 3202 (including portions 3202a and 3202b) after a wafer thinning and oxide removal process, in accordance with an embodiment. During the wafer thinning process, the bottom portion 3501 of the substrate 3202 can be removed (see Figure 43) such that the gap 3201 extends completely through the substrate 32〇2. 45 illustrates a top view of substrate 3202 after wafer thinning and oxide removal, in accordance with an embodiment. The taper angle "I" and the enthalpy consumed during the thermal growth process cooperate to separate the polycrystalline crucible 4〇〇 1 into two parts 4〇〇la 159976. Doc •34· 201235287 and 4001b. In one embodiment, the separation is at the thinnest portion of the gap 32〇1 (i.e., at the pinch portion 32〇3). FIG. 46 illustrates a bottom view of the substrate 3202 after wafer thinning and oxide removal procedures in accordance with an embodiment. All of the bite of the oxide 36〇1 can be removed. Figure 47 is a cross-sectional view of the substrate 3202 after wafer thinning and oxide removal procedures, in accordance with an embodiment. For the sake of clarity, the cone angle "work" in the figure is exaggerated. Figure 48 is a cross-sectional view of the substrate 3202 after the wafer thinning and oxide removal process, in accordance with an embodiment, the tapered angle Γι" is exaggerated for clarity. As shown, the single crystal germanium substrate 32A can be separated into two portions 3202a and 3202b, and the polysilicon 4001 can be separated into two portions 4? and 4001b. Each of the portions 32 〇 2a and 32 〇 of the substrate 3202 and each of the polycrystalline stalks may be mechanically and/or electrically isolated from each other. Indeed, the substrate 32 〇 2 Each of the portions 32〇23 and 3202b may be mechanically and/or electrically isolated from each other and mechanically and/or electrically isolated from each of the polysilicon turns (4)〇Ia and 4〇〇lb. Each part of the polycrystalline stone 4001 4〇〇la&4〇〇lb can be mechanically isolated and/or electrically isolated from each other' and mechanically and/or electrically isolated from each of the portions 32b and 32〇2b of the substrate 32〇2. The resulting structures can be separated from each other, and structures made of different materials can be separated from each other. In the embodiment towel discussed with reference to Figures 32 through 48 above, the use of the pinch portion 3203 promotes the polycrystalline 11 face Separation of the two parts relative to each other In the embodiment discussed in the multi-plots 49 to 56, a quotation procedure 159976. Doc •35- 201235287 The separation of the two parts of a polycrystalline stone eve 5101 relative to each other. Figure 49 illustrates the results of a DRIE slot etch procedure in accordance with an embodiment. A substrate 4901 can include a first semiconductor as discussed herein. A trench 4902 can be formed in the substrate 4901. Figure 50 illustrates the results of a thermal oxide process in accordance with an embodiment. A layer of oxide layer 5001 can be formed in the trench 4902 as discussed herein. The oxide layer 5001 may also be formed on a top portion of the substrate 4901. FIG. 51 illustrates the results of a polysilicon deposition process in accordance with an embodiment. A polycrystalline stone 5101 can be deposited on the oxide layer 5001. The polycrystalline stone 51 〇 1 may fill the gap 4902 and may extend over the entire top of the substrate 4901 or over a portion of the top of the substrate 4901. Figure 52 depicts the results of an oxide surrogate procedure in accordance with an embodiment. The portion of the portion of the polycrystalline crystal 5 101 and the portion of the oxide layer 5001 that substantially correspond to it can be removed, for example, by surname. The removal of the polysilicon 5101 and the oxide layer 5001 forms a trench 52〇1. Figure 53 illustrates the result of clamping the DrIE etch process in accordance with one embodiment. The surname procedure may result in the formation of a pinch or void 53〇1 which separates the polycrystalline stone 5101 into two portions 5101a & 51〇lbe at this time in the process 'the gap 4902 may not completely A top portion of the substrate 4901 extends to a bottom.

The n*U is functionally similar to the pinch portion 32〇3 of FIG. The gap 5301 promotes separation of the portions 5101a and 5101b of the polysilicon 5丨〇1 from each other. Figure 54% shows the results of a wafer thinning procedure in accordance with one embodiment. The wafer thinning process can be used to remove a sufficient portion of the bottom of the substrate 4901, 159976.doc -36-201235287 such that the trench 4902 extends completely from the top of the substrate 4901 to the bottom portion. FIG. 55 illustrates an implementation according to an implementation. The result of an isotropic oxide etch process applied to one of the substrates 4901. The isotropic oxide etch can be used to remove a portion of the oxide layer 5001. The isotropic oxide etch process releases four structures from each other (i.e., two portions 4901a and 4901b of the substrate 4901, and two portions 51〇13 and 51〇1b of the polysilicon 5101). Thus, the four structures can be mechanically and/or electrically isolated from each other. The isotropic oxide etch process can be used to selectively release or separate portions of any desired structure or structure from each other. Figure 56 illustrates one of the separations of polysilicon 51〇1 in accordance with an embodiment. As shown, each of the single crystal substrate 4901 and the polycrystalline stone 5101 can be separated into two portions. Each of the two portions 490la and 4901b of the single crystal substrate 4901 can be mechanically and electrically isolated from each other and mechanically and electrically isolated from each of the two portions 5101a and 510lb of the polysilicon 5101. Each of the two portions 5101a and 5101b of the polysilicon 5101 can be mechanically and electrically isolated from each other and mechanically and electrically isolated from each of the two portions 490la and 4901b of the single crystal substrate 4901. For the sake of clarity, a portion of the substrate 4901 is not shown in FIG. Figure 57 illustrates an example of the use of a pinch or split 5805 (see Figure 58) to separate the structure of the actuator device 5700, in accordance with an embodiment. In an embodiment, the actuator device 5700 can be used to implement the actuator device 400. This separation 5805 appears in the circumference 5803 at the lower right corner of the actuator device 5700. Figure 58 is an enlarged view of one example of the separation using the separation 5301 or the pinch 3203 to facilitate the separation of the structure 159976.doc • 37·201235287 according to an embodiment. In this example, separating the mobile polycrystalline germanium structure 5801 from the stationary polycrystalline germanium structure 58〇4 and the stationary single crystal structure 5806 can utilize mechanical separation of the moving polycrystalline germanium structures 58〇1 relative to the stationary polycrystalline germanium structures 5804 to facilitate The movement of the mobile polycrystalline germanium structure 5801 relative to the stationary polycrystalline germanium structures 58〇4. Electrical separation of the moving polycrystalline germanium structures 5801 relative to the stationary polycrystalline germanium structures 58〇4 can be utilized to facilitate application of different voltages to the moving polycrystalline germanium structures 58〇1 and the stationary polycrystalline germanium structures 5804. A layer of caulk 5802 can be detached or removed therefrom during manufacture of the actuator device 57 and thus may not form part of it. The ruthenium sealant 5802 is removed from the single crystal substrate 4901 to form a material of the actuator device 4A. Again, it is emphasized that the separation 5805 is shown prior to its etching. After etching, the moving polysilicon 5801 will be free to move relative to the stationary polysilicon 58〇4. Thus, the moving polysilicon 58〇1 will be separated from the stationary polysilicon 5804, as discussed with reference to Figures 32-56. A guarding gap 5901 in accordance with several embodiments is discussed with reference to Figures 59-66. The guarding gap 5901 can be used to support a polycrystalline layer 5590 (see FIG. 61) during the worming of an oxide layer 59〇4 (FIG. 6A), and is used, for example, to limit the barrier. The oxide layer 5904 behind the gap 5901 is etched. In an embodiment, the guard gap 5901 can be a blind trench that provides an increased path length of one of the oxide layers 5904 to be inscribed such that the etching is inhibited from extending to the oxide Layer 5904 is not the portion to be etched. The use of the guard gap 5 9 01 allows for an etch parameter (such as etchant, etchant concentration, 159976.doc •38·201235287 temperature, duration) that does not undesirably affect device operation or performance. Large tolerance or variation β Figure 59 illustrates a guarding gap 59〇1, which is formed in close proximity to a ten gauge slot 5902 in a substrate 5903, in accordance with a consistent embodiment. The conventional trench 5902 can provide any design functionality. For example, a polysilicon in the trench can concentrate the voltage across the actuator device 400 to one or more actuators 55A. The guarding slot 5901 may be deeper than the conventional slot 59〇2, at the same depth as the conventional slot, or shallower than the conventional slot 59〇2. The guarding slot 59〇1 may be relative to the conventional slot 5902 is substantially parallel or may be non-parallel with respect to the conventional gap 5902. The guard gap 59〇1 and/or the conventional slot 59 may be formed by a DRIE procedure or by any other desired method. FIG. 60 illustrates an oxide layer 59〇4 formed in the guard trench 59 and the conventional trench 5902 according to an embodiment. The oxide layer 59〇4 may include germanium dioxide. And can be formed by a thermal oxide process. Figure 61 depicts a polysilicon 5905 formed on the oxide layer 59A4 according to an embodiment. The polysilicon 59〇5 can completely fill the guard gaps 59〇1 and / Or the conventional trench 5902. Figure 62 depicts the oxide layer 59〇4 and the polysilicon 5905 after surface etching according to an embodiment. The oxide can be removed from the top surface of the substrate 59〇3 during surface etching. a layer 5904 and a portion of the polysilicon 59〇5. For example, from the top of the substrate 5903 The oxide layer 59〇4 and a portion of the polysilicon 5905 are removed to promote a desired voltage delivery on one surface of the actuator device 65 (see Figure 65). Figure 63 illustrates an implementation according to an implementation. For example, the substrate 5903 after the wafer thinning process. During the wafer thinning process, a bottom 159976.doc -39 - 201235287 portion 5907 (see FIG. 62) of the substrate 59〇3 can be removed. The bottom portion 59〇7 of the substrate 5903 can cause the conventional trench 5902 and/or the guard gap 59〇1 to extend from a top surface of the substrate to a bottom surface of the substrate 5903. For example, removing the The bottom portion of the substrate 5903 may cause the conventional trench 59〇2 to extend from the top surface of the substrate 59〇3 to the bottom surface of the substrate 5903, while the guard gap 59〇1 does not extend from the top surface of the substrate 5903. To the bottom surface of the substrate 59. 3. Thus, the guard gap 5901 can be a blind trench, and the conventional trench 59 〇 2 can be, for example, a through trench. Figure 64 illustrates an embodiment in accordance with an embodiment. Substrate 5903, oxide layer 5904, and polysilicon 5905 after an isotropic oxide etch After the etch, a portion of the polysilicon 59矽5 can be released by forming an undercut 6401. The guard gap 5901 prevents the undercut 6401 from propagating to the conventional trench such that the polysilicon 5905 near the conventional trench 5902 Not released from the substrate 59〇3, and thus remain substantially attached thereto. In this manner, the guarding gap 5901 can protect the conventional slot 5902 from undesired undercutting and release. The gap ensures mechanical support to the top polycrystalline layer 59〇5 and/or prevents the overhanging polysilicon layer from contacting the crucible surface and causing an electrical short. Figure 65 illustrates an actuator device 6500 having a guard gap 59〇1, in accordance with an embodiment. In an embodiment, the actuator device 65A can be used to implement the actuator device 400. The guard gap 59〇1 is not shown in the drawings and is shown in an enlarged view in the region of one of the circumferences 66 of Fig. 65. Fig. 66 illustrates a guard gap 59〇1 according to an embodiment. The protective gap 5901 is formed next to the conventional gap 59〇2 in the substrate 59〇3. In Figure 159976.doc -40· 201235287 Figure 66, the guard gap 59〇1 is irregular in shape. (eg, curved), and not parallel to the conventional trench 5902. The guarded trench 5901 tends to hold the ~oxide layer 5904 on the substrate 5903 for bonding a flexure (such as a Unwrapping the flexure 509, or in a region where it is after flexing. Figures 67-74 illustrate some of the procedures that may be used to form the various embodiments disclosed herein. Those skilled in the art will appreciate that A variety of other procedures are therefore provided. The discussion of such procedures is by way of example only and not limitation. FIG. 67 illustrates a DRIE program that can be used to form a plurality of trenches 67 in a substrate 6701, in accordance with an embodiment. 2. The trenches 67 〇 2 can be etched in the substrate 6701 As part of a procedure, for example to form the actuator device 400 (see Fig. 5A). Figure 68 illustrates a linear oxide growth procedure according to an embodiment. It may be on one surface of the substrate 6701 (e.g., top) Forming an oxide layer 6801 on the surface). The oxide layer 6801 can be formed on two surfaces (for example, a top surface and a bottom surface) of the substrate 67. The oxide layer 68〇1 can only partially fill the surface. The gaps 6702. The oxide layer 6801 can be relatively thin relative to one of the gaps 67 〇 2 in width "W" (see Figure 67). Figure 69 illustrates a polycrystalline germanium (expected other material) deposition process in accordance with an embodiment. A polycrystalline stone eve 6901 may be formed on the oxide layer 6801 on one surface (e.g., the top surface) of the substrate 6701. The polysilicon 6901 can be formed on the oxide layers 68〇1 on the two surfaces (e.g., the top surface and the bottom surface) of the substrate 67〇1. The polysilicon 6901 can completely fill the gaps 67〇2. 159976.doc -41 · 201235287 FIG. 70 illustrates a polysilicon and oxide etch process in accordance with an embodiment. The selected portion of the polysilicon 6901 and/or oxide layer 6801 can be removed by etching. The portion of the polysilicon 6901 and/or oxide layer 6801 to be retained may be masked to prevent etching thereof. In this way, the polycrystalline germanium conductor can be patterned. The polycrystalline germanium conductors may be formed inside and/or outside of the trenches 6702. The polysilicon conductors can be used for voltage communication, such as from one location of the actuator device 400 to another location. Thus, the polycrystalline germanium conductors can be used to facilitate actuation of the actuators 55A. Figure 71 illustrates a DRIE procedure in accordance with an embodiment. The DRIE procedure can be used to substantially remove the polysilicon 69i and/or the oxide layer 6801 from one or more of the trenches 6702. A mask can be used to determine what portion of the polycrystalline stone layer 6 9 01 and/or § the oxide layer 6 8 01 is removed. Removal of the polycrystalline shred 6901 and/or oxide layer 6801 from a gap 6706 can promote the formation of a pinch or separation that facilitates the separation of the substrate 6701 into two portions 6701 & and 6701b (see Figure 73) » Selective removal of the oxide layer 6801 provides a separation of a predetermined distance (i.e., the thickness of the oxide layer 6801). For example, the oxide layer 68〇j can have a thickness of between about 2 microns and 4 microns (such as 3 microns) and can be removed to provide this distance between the remaining polycrystalline germanium 6 9 01 and the substrate 6 7 〇丨a separation. Figure 72 illustrates a metallization process in accordance with an embodiment. A metal conductor, a contact, and/or a bonding pad 72 can be formed on the selected portion of the substrate 6701, the oxide layer 6801, and/or the polysilicon 69〇1. 158976.doc • 42· 201235287 The shim 7201 can, for example, facilitate electrical connection from the lens barrel 200 (see FIG. 2) to the actuator device 400. FIG. 7 shows a wafer thinning process according to an embodiment. A bottom portion 7205 of the substrate 6701 (see FIG. 72) may be removed such that one or more of the trenches 6702 separate the substrate 6701. The manner in which the two portions 6701a and 6701b are formed extends completely from the top to the bottom of the substrate 6701. The two portions 670 la and 670 lb can be mechanically isolated and/or electrically isolated from each other. Removing the polysilicon 6901 from a trench 6702 can promote the formation of a pinch or separation 'which facilitates the separation of the substrate 67〇1 into two portions 67〇u and 670lb (see Figure 73), thus forming two separate Structure or device 73〇2 and 7303. Figure 74 illustrates an isotropic oxide etch process in accordance with an embodiment. The isotropic oxide surrogate procedure can be used to remove and/or undercut the oxide layer 6801 from the two portions 6701a and/or 0701b of the substrate 6701. Selective removal of the oxide layer 6801 can facilitate the fabrication of the desired structure as discussed herein. For example, this procedure can be used to form the lateral reducer assembly 1001 of the figure. Monoterpene and polycrystalline germanium are discussed herein as examples of materials from which the structure can be fabricated. This discussion is by way of example only and not as a limitation. A variety of other semiconductor materials and a variety of non-semiconductor (e.g., conductor or non-conductor) materials can be used. The actuators disclosed herein are described as -MEMS actuators, and this description is by way of example only and not as a limitation. Various embodiments may include features of non-EMS actuation, non-赃 (10) actuator components, and/or non-MEMS actuation 159976.doc -43· 201235287. Thus, an actuator suitable for use in a variety of different electronic devices can be provided. Motion control of the actuator and/or items moved by the actuator may also be provided. Thus, an add-on camera for use in an electronic device can be provided. The smaller size and enhanced impact resistance for compact cameras are provided in accordance with various embodiments. Enhanced manufacturing techniques can be used to provide these and other advantages. These &' manufacturing technologies can additionally enhance the overall quality and reliability of compact cameras while also substantially reducing their cost. Where applicable, the various components set forth herein can be combined into a composite component and/or separated into sub-components. Where applicable, the order of the various steps described herein can be changed, combined into a synthetic step and/or separated into sub-steps' to provide the features described herein. The embodiments described herein illustrate the invention, but do not limit the invention. It should also be understood that many modifications and variations are possible in accordance with the principles of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates an electronic device having an actuator device in accordance with an embodiment. 2 illustrates a small camera having a lens barrel in accordance with an embodiment. Figure 3A illustrates a lens barrel having an actuator module disposed therein, in accordance with an embodiment. FIG. 3B illustrates, in an exploded view, a lens barrel and an actuator module in accordance with an embodiment. 159976.doc -44 - 201235287 Figure 4 illustrates an actuator module having an actuator device disposed therein, in accordance with an embodiment. FIG. 5A illustrates a top view of an actuator device in accordance with an embodiment. FIG. 5B illustrates a top view of an actuator device in accordance with an embodiment. Figure 6A illustrates a portion of an actuator device in accordance with an embodiment. Figure 6B illustrates a portion of an actuator device in accordance with an embodiment. Figure 6C illustrates a portion of a platform in accordance with an embodiment. Figure 6D illustrates a bottom view of a movable lens placed to be mounted to an actuator device, in accordance with an embodiment. Figure 6E illustrates a side view of a movable lens mounted to an actuator device, in accordance with an embodiment. Figure 7 illustrates a portion of an actuator device in accordance with an embodiment. Figure 8 illustrates a bottom view of an actuator arrangement in an unfolded configuration, in accordance with an embodiment. Figure 9A illustrates a portion of an actuator arrangement in an unfolded configuration that is not applied with any voltage, in accordance with an embodiment. Figure 9B shows a portion of an actuator arrangement in a spread configuration that is applied with a lower voltage in accordance with an embodiment. Figure 9C illustrates a portion of an actuator device configured in a - gate configuration to which a maximum voltage is applied, in accordance with an embodiment. Figure 10 illustrates a lateral reducer assembly in accordance with an embodiment. Figure 11 illustrates a pivotal deflection and a motion controlled torsional deflection in accordance with an embodiment. Figure 12 illustrates an internal motion control hub in accordance with an embodiment. 159976.doc -45- 201235287 Figure 13 illustrates a cantilever deflection in accordance with an embodiment. Figure 14 illustrates serpentine contact deflection and an unfolding torsional deflection in accordance with an embodiment. Figure 15 depicts a top view of the deployment stop not according to one embodiment. Figure 16 depicts a bottom view of the deployment stop in accordance with an embodiment. Figure 17A illustrates a diaphragm damper in accordance with an embodiment. Figure 17 illustrates a movable frame disposed between a higher module cover and a lower module cover without impact applied, in accordance with an embodiment. Figure 17C illustrates a movable frame disposed between a higher module cover and a lower module cover that applies an impact, in accordance with an embodiment. Figure 17D illustrates a partial elevational view of another actuator device in accordance with an embodiment. Figure 17 is an enlarged plan view of an actuator device in accordance with an embodiment. Figure 17F illustrates an external pivoting of the actuator assembly, a lateral damper assembly, a single damper diaphragm, and an interlocking damper diaphragm feature, in accordance with an embodiment. 17G and 17B illustrate external pivot flexing in accordance with an embodiment. Figures 171 and 17J illustrate a lateral reducer assembly in accordance with a consistent embodiment. 17A and 17L are cross-sectional views of a single damper diaphragm and an interlocking damper diaphragm in accordance with an embodiment. Figure 17 is a top plan view of a lateral damper assembly, a single damper diaphragm, and an interlocking damper diaphragm in accordance with an embodiment. Figure 17A is a cross-sectional view of a single damper diaphragm and interlocking reduction 159976.doc • 46- 201235287. Figure 18 illustrates a ball bearing write reducer in accordance with an embodiment. Figure 19 illustrates a ball socket reducer and two frame pivots 0' in accordance with an embodiment. Figure 20 illustrates a kinematic mounting flex with an electrical contact, in accordance with an embodiment. Figure 21 illustrates kinematic mounting flexure with electrical contacts in accordance with a consistent embodiment. Figure 22 illustrates a section of the kinematic mounting deflection taken along line 22 of the Figure, in accordance with an embodiment. Figure 23 illustrates a cross section of the electrical contact taken along line 23 of Figure 21, in accordance with an embodiment. Figure 24 illustrates kinematic mounting flex with electrical contacts in accordance with an embodiment. Figure 25 depicts a cross section of the electrical contact taken along the line of Figure 24, in accordance with an embodiment. Figure 26 depicts a kinematic mounting deflection with electrical contacts in accordance with an embodiment. Figure 27 illustrates a cross section of the electrical contact taken along line 27 of Figure 26 in accordance with an embodiment. Figure 28 illustrates a cross section of an electrical contact taken along line 2δ, in accordance with an embodiment. Figure 29 depicts a kinematic mounting flex with electrical contacts in accordance with an embodiment. 0 159976.doc -47·201235287 Figure 30 illustrates an actuator assembly having kinematic mounting flexing in accordance with an embodiment. Figure 31 illustrates an actuator device having kinematic mounting flexing in accordance with an embodiment. Figure 32 is a perspective view of a substrate having a gap in which a pinch is formed in accordance with an embodiment. Figure 3 3 continues with a top view of a substrate in accordance with an embodiment. Figure 34 is a cross-sectional view of the substrate taken along line 34 of Figure 33, in accordance with an embodiment. Figure 35 is a cross-sectional view of the substrate taken along line 35 of Figure 33, in accordance with an embodiment. Figure 36 illustrates a perspective view of a substrate in which an oxide layer is formed, in accordance with an embodiment. 37 depicts a top view of a substrate in accordance with an embodiment. 38 depicts a cross-sectional view of the substrate taken along line 38 of FIG. 37, in accordance with an embodiment. Figure 39 depicts a cross-sectional view of a substrate not taken in accordance with an embodiment taken along line 37 of Figure 37. Figure 40 depicts a perspective view of a substrate not according to an embodiment having a polysilicon formed on the oxide layer. Figure 41 illustrates a top view of a substrate in accordance with an embodiment. Figure 4 2 illustrates a cross-sectional view of the substrate taken along line 42 of Figure 41, in accordance with an embodiment. Figure 4 is a cross-sectional view of a substrate taken along line 3-4 of Figure 4, taken along line 159, doc - 48 - 201235287, in accordance with an embodiment. Figure 44 is a perspective view of a substrate after a wafer thinning and oxide removal process, in accordance with an embodiment. FIG. 4 is a top plan view of a substrate according to an embodiment. Figure 46 depicts a bottom view of a substrate in accordance with an embodiment. Figure 47 is a cross-sectional view of the substrate taken along line 47 of Figure 45, in accordance with an embodiment. Figure 48 is a cross-sectional view of the substrate taken along line 48 of Figure 45, in accordance with an embodiment. Figure 49 illustrates a substrate after a deep reactive ion etching (DRIE) trench etch process, in accordance with an embodiment. Figure 50 illustrates a substrate after a thermal oxide process in accordance with an embodiment. Figure 51 illustrates a substrate after a polysilicon deposition process in accordance with an embodiment. Figure 52 illustrates an oxide etch process and surface polysilicon etch after substrate in accordance with an embodiment. Figure 53 illustrates that a separate substrate has been formed in the polysilicon after the DRIE etch process in accordance with an embodiment. Figure 54 illustrates a substrate after a wafer thinning process in accordance with an embodiment. Figure 55 illustrates a substrate after an isotropic oxide etch process in accordance with an embodiment. Figure 56 illustrates a substrate after a separation has been formed in the polysilicon according to an embodiment. Figure 57 illustrates an example of a 159976.doc -49-201235287 using a pinch or separation according to an embodiment. Fig. 58 is a magnified view showing an example of the use of a pinch portion or separation according to the embodiment. Figure 59 illustrates a guarding gap formed in a substrate adjacent to a conventional trench in accordance with an embodiment. Figure 60 illustrates an oxide layer formed in a guard trench and a conventional trench, in accordance with an embodiment. 61 illustrates a polysilicon formed on an oxide layer ± according to an embodiment. Figure 6 2 illustrates the oxide layer and polycrystalline dream after the surface (4) according to the embodiment. FIG. 63 illustrates a substrate after wafer thinning in accordance with an embodiment. Figure 64 illustrates a substrate, an oxide layer, and a polysilicon after isotropic oxide etching, in accordance with an embodiment. Figure 65 illustrates an actuator device having a guard gap, in accordance with an embodiment. 66 乂 Figure 66 illustrates an enlarged view of a guard gap in accordance with an embodiment. Figure 67 illustrates a DRIE procedure in accordance with an embodiment. Figure 68 illustrates a linear oxide growth procedure in accordance with an embodiment. Figure 69 illustrates a polysilicon deposition process in accordance with an embodiment. Figure 70 illustrates a polysilicon and oxide etch process in accordance with an embodiment. Figure 71 illustrates a DRIE procedure in accordance with an embodiment. Figure 72 illustrates a metallization process in accordance with an embodiment. FIG. 73 illustrates a wafer thinning process in accordance with an embodiment. Figure 74 illustrates an isotropic oxide etch process in accordance with an embodiment. 159976.doc -50· 201235287 [Description of main component symbols] 66 circumference 100 electronic device 101 compact camera 200 lens barrel 300 actuator module 301 movable lens 302 fixed lens 400 actuator device 401 higher module cover / Higher Module Housing 402 Lower Module Cover / Lower Module Housing 403 Notch 404 Electrical Contact 405 Platform Opening 410 Light Pumping 501 Internal Hub Flexing 502 Kinematic Mounting Flex 505 Movable Frame / Movable Components 506 External Frame/Fixed Assembly 508 Serpentine Contact Deflection 509 Unfolding Torsion Flex 510 Deployment Stopper 511 Diaphragm Damper 513 Ball Bearing Reducer 159976.doc -51 - 201235287 514 Cantilever Deflection 515 Motion Control Torsion Deflection 516 External pivot flexing 517 Fixed frame 518 Cylindrical ball 519 Cylindrical bearing 520 Platform 521 Lens spacer 522 Bracket 523 Epoxy 525 Pivot shaft 526 Frame pivot 550 Actuator 551 Space 552 Block 560 Tooth 571 Radial variation 1001 Lateral reducer assembly 1002 first reducer member 1003 second reducer member 1301 first thin section 130 2 Thicker section 1303 Second thin section 1501 Epoxy 159976.doc -52- 201235287 1701 Damping material 1702 Clearance 1706 Vibrating piece 1707 Vibrating piece 1708 Extension part 1709 Extension part 1719 Gap 1720 Gap material 1750 Actuator Device 1752 External pivot deflection 1754 Lateral reducer assembly 1756 Interlocking reducer diaphragm characteristics 1756A Vibration plate 1756B Vibration plate 1758 Single reducer diaphragm 1760 Clearance 1762 Shoulder 1764 Clearance 1766 Elliptical sealant 1768 Clearance 2001 Polycrystalline 矽 2002 2002 2002 Polycrystalline 矽 / / another conductive material filled gap 2003 Top surface 2004 Bottom surface 159976.doc •53- 201235287 2007 Oxide layer 2008 Polycrystalline/other conductive material 2009 Metal contact gasket 2011 Undercut 2211 single crystal substrate / single crystal germanium / single crystal germanium substrate 2701 polycrystalline germanium layer 2702 oxide layer 2703 single crystal substrate 2801 undercut 2802 metal contact pad 3201 trench 3202 substrate 3202a substrate portion 3202b substrate portion 3203 pinch portion 3205 gap 3501 The bottom portion of the substrate 3601 oxide layer 4001 polycrystalline silicon 4001a polycrystalline portion 4001b Polycrystalline portion 4901 Substrate 4901a Substrate portion 4901b Substrate portion 159976.doc • 54· 201235287 4902 Gap 5001 oxide layer 5101 polysilicon 5101a polycrystalline germanium portion 5101b polycrystalline germanium portion 5201 trench/void 5301 pinch / void 5700 actuator device 5801 moving polycrystalline structure 5802 矽 caulking 5803 circumference 5804 stationary polycrystalline structure 5805 pinching / separation 5806 stationary single crystal structure 5901 protective gap 5902 conventional gap 5903 substrate 5904 oxide layer 5905 polycrystalline $夕层5907 Substrate bottom portion 6401 Undercut 6500 Actuator device 6701 Substrate 6701a Substrate portion 159976.doc -55- 201235287 6701b Substrate portion 6702 Gap 6801 Oxide layer 6901 Polysilicon 7201 Bonding pad 7205 Bottom of substrate Part 7302 Separated Structure 7303 Separated Device 159976.doc -56-

Claims (1)

201235287 VII. Patent application scope: 1. A device comprising: a deflection formed by a first semiconductor material; a first-gap gap formed in the deflection and separating the first semiconductor material a first portion and a second portion; an oxide layer formed in the first trench and extending over a top portion of the first semiconductor material; a second semiconductor material formed on The oxide layer; and wherein the first trench and the oxide layer cooperate to electrically isolate the first portion and the second portion from each other. 2. The device of claim 1 wherein the (four) semiconductor material promotes electrical contact to either side of the bond. 3. The first trench is formed as in the device of the requester, wherein the length is substantially perpendicular to one of the flexures. The device of claim 1 wherein the first semiconductor material is a single crystal germanium, and the second semiconductor material is polycrystalline germanium. The apparatus of claim 1, wherein the first trench is formed by a deep reactive ion etching (DRIE) process. The apparatus of claim 1 includes a cymbal comprising a single crystal slab and formed on the first portion. 7. The apparatus of claim 6, further comprising: a second gap Formed through the spacer; a layer of vaporized layer 'which is formed in the second trench; and a latent layer formed on the oxide layer and from one of the spacers 159976 .doc 201235287 The surface extends to one of the bottom surfaces of the gasket. 8. As in the case of 青青7*, it further includes a metal contact that is electrically connected to the polysilicon. 9. The device of claim 8 wherein the metal contact is formed on the spacer 0. An electronic device comprises the device of claim 1. 11. A system comprising: an outer frame; an actuator formed on the outer frame; flexing 'formed by the -th semiconductor material and formed in the outer frame; and the first semiconductor a second portion; a first trench formed in the first portion of the flex material separated and a layered oxide layer formed in the first trench, and in the first semiconductor material Extending on one of the top portions; - forming a second semiconductor material on the oxide layer; and / wherein the first trench and the oxide layer cooperate to electrically separate the first portion and the second portion isolation. 12. The system of claim 11, the electrical contact on either side of the curve. 13. The system of claim 11 forms the first slot. Wherein the second semiconductor material is promoted to the flexural direction in which the length is perpendicular to one of the windings Μ. The system of claim η and the second semiconductor material is a polycrystalline germanium material is a single crystal 矽Z59976.doc 201235287 a deep Reactive Ion Etching 15. A system as claimed in claim 1, wherein the first trench is formed by a DRIE procedure. 16. The system of claim 11, further comprising a spacer comprising a single crystal stone and formed on the first portion. 17. The system of claim 16, further comprising: a second trench formed through the spacer; an oxide layer 'formed in the second trench; and polycrystalline lit. Formed on the oxide layer and extending from the upper surface of the spacer to a bottom surface of the spacer. 18. The system of claim 17, wherein the step further comprises a metal contact in electrical communication with the polycrystalline body. A system of claim 18, wherein the metal contact is formed on the cymbal. An electronic device 'which includes a system for requesting i i . A method comprising: forming a deflection; forming a trench in the flex; forming an oxide layer in the trench; and forming a conductive material on the oxide layer. 22. The method of claim 21, wherein: the forming-deflection package (4) is a deflection consisting of a first semiconductor material; and/or forming a conductive material on the oxide layer comprises forming a second semiconductor material Composition - conductive material. The method of claim 21, wherein the electrically conductive material promotes electrical contact to either side of the deflection. 24. A method comprising: applying a voltage to an actuator of the actuator device via a conductor formed in a trench of one of the actuator devices; and wherein the flexing The actuator device is attached to a lens barrel. 25. The method of claim 24, further comprising moving an optical component with the actuator device. 26. The method of claim 24, wherein the conductor promotes electrical contact to any of the sides of the deflection. 159976.doc