201226613 六、發明說明： 【發明所屬之技術領域】 本發明係有關與接合材（焊材）之饮者性高的支承板、 乾材總成（assembly)及濺鐘用粗材。 【先前技術】 就在基板上形成薄膜之技術而言，已知有賤链法。滅 鍵用的材，由於在電毁中離子之錢錢作用而升溫，故係 在與冷卻用的支承板接合的狀態下使用。對支承板之輕材 的黏結（bonding)，廣泛採用焊接（brazing)。 濺鍍中使用的靶材，係要求能承受成膜時之溫度上升 或熱應力，放出氣體量少等。尤其靶材的耐熱特性，係對 靶材與支承板要求有高的密著性。因此對靶材與支承板要 求與焊材有充分的潤濕性，就以往作為靶材與支承板各自 之接合面的底層處理而言’係藉由電綾、蒸鍍、助熔劑來 進行金屬化（metallized)處理（參照例如專利文獻1)。 [先前技術文獻] (專利文獻） 專利文獻1 :日本特開2006-257510號公報 【發明内容】 [發明所欲解決之課題] 然而，藉由電鍍、蒸鍍、或助熔劑的金屬化處理，由 於係以金屬化層被覆母材表面，故與母材之密著性不佳， 而有剝離之問題。此外’藉由電鍍或助熔劑的塗布所進行 之金屬化處理’需要廢液之處理成本’同時對環境負荷很 4 323678 201226613 大。此外，助熔劑有放出氣體之問題，難以進行成高品質 之成膜。 有鑑於如上述之情事，本發明之目的係提供一種與接。 合材的密著性佳的支承板、靶材總成及濺鍍用靶材。 [解決課題之手段] 為了達成上述目的，本發明之一形態的支承板係具備 支承板本體與密著層。 上述支承板本體具有與濺鍍用之靶材相對向之第1之 面，且由第1金屬材料所形成。 上述密著層係具有塗布有以銦、錫或此等之合金所形 成的接合材之第2面，且含有對於上述接合材比上述第1 金屬材料具有更高潤濕性的第2金屬材料，且形成在上述 第1面。 此外，本發明之一形態的靶材總成，具備濺鍍用之靶 材、支承板本體、接合層、及密著層。 上述支承板本體係具備與上述把材相對向之第1面， 且由第1金屬材料所形成。 上述接合層係設置在上述靶材與上述第1面之間，且 由接合材所形成。 上述密著層係具備塗布有上述接合材之第2面，且含 有對於上述接合材比上述第1金屬材料具有更高潤濕性的 第2金屬材料，且形成上述第1面。 此外，本發明之一形態之濺鍍用靶材係具備靶材本 體、與金屬化層。 5 323678 201226613 上述把材本體係具備塗布有以銦、锡或此等之合金所 形成的接合材之接合面，且由第丨金屬材料所形成。 上述金屬化層係形成在上述接合面，且由上述第丨金 属材料與第2金屬材料之合金相所構成，而第2金屬材料 係對於上述接合材，比上述第1金屬材料具有更高的潤濕 性。 【實施方式】 [實施發明之最佳形態] 本發明之一實施形態的支承板係具備支承板本體與密 著層。 上述支承板本體係具有與濺鍍用靶材相對向之第1 面，且由第1金屬材料所形成。 上述密著層係具備塗布有以銦、錫或此等之合金所形 成的接合材之第2面’且含有對上述接合材比上述第1金 屬材料具有更高潤濕性的第2金屬材料，且形成在上述第 1的面。 上述支承板中，密著層由於係以對接合材具有比支承 板本體之構成材料更高潤濕性的材料所形成，故在與接合 材之間可以得到高的密著性。 上述密著層也可以由上述第1金屬材料與上述第2金 屬材料之合金相所成的金屬化層所形成。 藉此，可以將金屬化層與支承板本體的第1面一體 化，且可以防止金屬化層自該第1面剝離。此外，上述合 金相因為含有對接合材具有高潤濕性之金屬材料，故可提 6 323678 201226613 升與接合材之密著性。 形成支承板的金屬化層之第1金屬材料及第2金屬材 料皆無特別限定，可以任意地選擇。例如，就第1金屬材 料而言，可以列舉：銅、銘、鈦、铜、或此等之合金、或 是不鏽鋼等，就第2金屬材料而言，可以列舉：銅、鎳、 鋁、錫、銦、金、銀、或此等之合金。其中，可以適合使 用例如··第1金屬材料為鉬或其合金，第2金屬材料為鎳 或其合金的組合。 形成上述金屬化層的方法也無特別限定，例如，可以 藉由放電處理而形成金屬化層。藉此，可以容易地形成金 屬化層。 上述密著層也可以由以上述第2金屬材料所形成且接 合在第1面上之金屬板所形成。 上述金屬板係接合在支承板本體之第1面，而構成支 承板本體之金屬化層。上述金屬板由於係以對接合材具有 比支承板本體之構成材料更南潤濕性的材料所形成*故在 與接合材之間可以得到高的密著性。此外，由於金屬板係 與支承板本體一體接合，故可以得到對支承板本體較高的 剝離強度。 金屬板對於支承板本體之接合方法並無特別限定，例 如，可以適用爆炸接合、擴散接合或焊接等。藉此，就可 以避開廢液之處理或放出氣體之產生的問題。 形成支承板本體之第1金屬材料及形成金屬板之第2 金屬材料皆無特別限定，可以任意地選擇。例如，就第1 323678 201226613 金屬材料而言’可以使用：Ti(鈦）、Ti合金或不鏽鋼，就 第2金屬材料而言，可以使用：Cu(銅）、Ni(錄）、A1 (鋁） 或此等之合金。 以Ti (鈦）、Ti合金或不鏽鋼作為基材之支承板，由於 楊氏係數大、強度高，故因水壓產生之膨脹少。因此，例 如在燒結把般脆性高的靶中係使用此種支承板。由於了丨及 Ti合金之熱膨脹係數小，以此等材料作為基材之支承板， 例如係在ITO (Indium Tin 〇xide ;銦錫氧化物）、GZ〇 (Gallium-doped Zinc Oxide ;鎵鋅氧化物）等之低熱膨脹 乾中使用。Ti、Ti合金及不鏽鋼尊由於你τ γ 螂寻由於與1η(銦）或Sn(錫） 等之接合材的潤濕性低，故以Cu、Ni、M等所形成的金屬 板會形成在接合面，*可以確保與上述接合材的良好密著 性。 上述金屬板也可以分割為複數個分割片而接上 第1面。藉此，可以抑制起因於支承板本體與^板的丄 膨脹係數差的支承板之翹曲或變形。 屬板的… 本發明之-實施形態叫材總成係具備濺錢用之乾 材、支承板本體、接合層、及密著層。 面 上述支承板本體係具有與上述輯相對向 且由第1金屬材料所形成。 且 上述接合層係設置在上述把材與上述第i面之 由接合材所形成。 上述密著層係具有塗布有上述接合材之第2面，含有 對上述接合材具㈣上述第丨金屬材料更高潤祕的第$ 323678 8 201226613 金屬材料，且形成在上述第1的面。 上述乾材總成中，密著層係由對接合材具有比支承板 本體之構成材料更高潤濕性的材料所形成。因此，在與接 合材之間可以得到高的密著性。 本發明之一實施形態之濺鍍用靶材係具備靶材本體、 及金屬化層。 上述靶材本體係具有塗布有以銦、錫或此等之合金所 形成的接合材之接合面，且由第1金屬材料所形成。 上述金屬化層係形成在上述接合面，且由上述第1金 屬材料及第2金屬材料之合金相所構成，而第2金屬材料 係對於上述接合材具有比上述第1金屬材料更高的潤濕 性。 上述金屬化層係由上述第1及第2金屬材料之合金相 所構成。藉此可以將金屬化層與靶材本體的接合面一體 化，且可以防止金屬化層自接合面剝離。此外，上述合金 相係因為含有對接合材具有高潤濕性之金屬材料，故可提 升與接合材之密著性。 形成靶材的金屬化層之第1金屬材料及第2金屬材料 皆無特別限定，可以任意地選擇。例如，就第1金屬材料 而言，可以列舉：銅、鋁、鈦、鉬、或此等之合金、或不 鏽鋼等，就第2金屬材料而言，可以列舉：銅、鎳、鋁、 錫、銦、金、銀、或此等之合金。其中，可以適合使用例 如：第1金屬材料為錮或其合金、第2金屬材料為鎳或其 合金的組合。 9 323678 201226613 以下，一面參考圖式，一面說明本發明之實施形態。 〈第1實施形態〉 [乾材總成] 第1圖係示意表示本發明的一實施形態之靶材總成的 剖面圖。本實施形態之靶材總成10係有支承板本體1、靶 材2、及接合層3。 接合層3係接合支承板本體1與靶材2的接合材，例 如，以In、Sn或此等之合金所構成的焊材來形成。 靶材總成10係設置在未圖示的濺鍍裝置。支承板1係 與直流、交流或RF電源連接，靶材2係與真空室内之基板 表面隔開預定之間隔而相對向配置。靶材總成10具有例如 藉由冷卻水冷卻的構造，藉由水冷支承板1而防止錢鐘時 的靶材2之過度升溫，且防止因接合層3的熔融所造成之 靶材2之剝離等。靶材總成10係與未圖示的磁場單元組 合，而構成為磁控管型滅鍍陰極。 [支承板] 第2圖係支承板1的剖面圖。支承板1具有金屬製的 支承板本體11及金屬化層12(第1金屬化層）。 支承板本體11係具有接合面11a。在接合面11a隔著 接合層3接合有靶材2。在形成支承板本體11之金屬材料 (第1金屬材料）係使用各種之金屬材料，例如，可以列舉： Cu、Al、Ti、Mo、或此等之合金或是不鑛鋼等。 支承板本體11係在内部具有未圖示冷卻水的循環通 路。支承板本體11並不限定於在内部具有上述循環通路之 10 323678 201226613 構造，也可以為與接合面lla相反側之面與 冷卻面。此外，支承板本體u並不限定在形::水接觸之 狀的例，例如，亦可如第3圖所示為稱為田平純之板形 剖面形狀。 ‘叫之帽子型的 金屬化層12係形成在接合面lla，金屬J 構成支承板本體11之母材（第1金屬材料）、與層12係以 合層3之接合材（in、Sn等）比該金屬材料具^子於構成接 的金屬化金屬（第2金屬材料）之合金相所形更高潤濕性 12係發揮作為提升支承板本體Η與接合層/ '金屬化層 性的密著層之功能。 之·間之密著 就對於In、Sn等之接合材具有高潤濕性 言，可以列舉：Cu、Ni、Al、Sn、ln、Au、金屬材料而 金，因應構成支承板本體11的金屬材料種g或此等之合 在本實施形態中，支承板本體11係由如戶而適當選擇。 金屬係使用Ni。 斤樽成，金屬化 第4圖係說明金屬化層12之形成方法、 化層12係藉由放電處理而形成。如第4圖的示意圖。金屬 電極棒15為隔著預定間隙而與接合面1 IQ斤示，放電用之 極棒15係由金屬化金屬（本例由為Ni_a相鮮向配置。電 Ua之金屬化金屬處理之際，藉由在電極才^成。在接合面 體11之間施加預定之電壓，而在電極棒1 15與支承板本 面11a之間產生放電。藉此，形成接合面的前端與接合 為藉由從電極棒15飛散之Ni粒子而:金的母材（M〇) 在接合面11a上移動，藉此在接合面*化15電極棒15係 3整面上形成金屬 201226613 化層12。 接合面11a之金屬化金屬處理條件並無特別限定，可 以使用例如電壓150V、電容器容量4〇eF之脈衝電源，或 是電壓100V、電容器容量10"F之脈衝電源作為電源。金 屬化層12之厚度並無特別限定，只要使接合面11a之表層 可以金屬化之厚度即可。 由於金屬化層12係與支承板本體11之接合面11a — 體地形成，故防止金屬化層12從接合面11a剝離。此外構 成金屬化層12的合金相，由於含有對於接合材具有高潤濕 性的金屬材料（金屬化金屬），故可以提升與接合材的密著 性。 [乾材] 第5圖係靶材2的剖面圖。靶材2具有金屬製的靶材 本體21及金屬化層22(第2金屬化層）。 靶材本體21係具有接合面21a。在接合面21a隔著接 合層3而接合有支承板本體1。在形成靶材本體21之金屬 材料（第1金屬材料）係使用各種之金屬材料，例如，可以 列舉：Cu、Al、Ti、Mo、或此等之合金或不鏽鋼等。 靶材本體21也可以是原料金屬之鑄造體，也可以是原 料粉末的燒結體。靶材本體21係可以分別調整成適合濺鍍 用途之大小、厚度、形狀、組織。 金屬化層2 2係形成在接合面.21 a。金屬化層2 2係由 構成靶材本體21之母材（第1金屬材料）、及對於構成接合 層3之接合材（In、Sn等）比該金屬材料具有更高潤濕性的 12 323678 201226613 金屬化金屬（第2金屬材料）之合金相所形成。金屬化層 係具有發揮提升支承板本體n與接合層3之間之 ^ 密著層之功能。 嫌的 就金屬化金屬而言，可以列舉：Cu% Ni、A卜％、工201226613 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a support plate, a dry material assembly, and a thick material for a splashing clock which are highly drinkable to a joint material (weld material). [Prior Art] As for the technique of forming a thin film on a substrate, a hydrazine chain method is known. Since the material for the extinguishing element is heated by the action of ions in the electric destruction, it is used in a state of being joined to the support plate for cooling. Brazing is widely used for bonding the lightweight material of the support plate. The target used in sputtering is required to withstand the temperature rise or thermal stress during film formation, and the amount of released gas is small. In particular, the heat resistance of the target requires high adhesion to the target and the support plate. Therefore, the target and the support plate are required to have sufficient wettability with the welding material, and the metal is conventionally used for the underlayer treatment of the joint surface between the target and the support plate by metal, vapor deposition, and flux. Metallized processing (see, for example, Patent Document 1). [Prior Art Document] (Patent Document) Patent Document 1: JP-A-2006-257510 SUMMARY OF INVENTION [Problems to be Solved by the Invention] However, by metallization treatment of plating, vapor deposition, or fluxing, Since the surface of the base material is coated with the metallized layer, the adhesion to the base material is poor, and there is a problem of peeling. In addition, the metallization process by plating or flux application requires the disposal cost of waste liquids while the environmental load is very large 4 323678 201226613. Further, the flux has a problem of releasing gas, and it is difficult to form a film of high quality. In view of the foregoing, it is an object of the present invention to provide a connection. A support plate, a target assembly, and a target for sputtering which are excellent in adhesion. [Means for Solving the Problems] In order to achieve the above object, a support plate according to an aspect of the present invention includes a support plate main body and an adhesion layer. The support plate body has a first surface facing the sputtering target and is formed of a first metal material. The adhesion layer has a second surface coated with a bonding material formed of an alloy of indium, tin or the like, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material. And formed on the first surface. Further, a target assembly according to an aspect of the present invention includes a target for sputtering, a support plate body, a bonding layer, and an adhesion layer. The support plate system includes a first surface facing the material and is formed of a first metal material. The bonding layer is provided between the target and the first surface, and is formed of a bonding material. The adhesion layer includes a second surface to which the bonding material is applied, and a second metal material having higher wettability with respect to the bonding material than the first metal material, and the first surface is formed. Further, the target for sputtering according to one embodiment of the present invention includes a target body and a metallization layer. 5 323678 201226613 The above-mentioned material-incorporated system is provided with a joint surface coated with a bonding material formed of indium, tin or an alloy thereof, and is formed of a second metal material. The metallization layer is formed on the joint surface and is composed of an alloy phase of the second metal material and the second metal material, and the second metal material is higher than the first metal material for the joint material. Wettability. [Embodiment] [Best Mode for Carrying Out the Invention] A support plate according to an embodiment of the present invention includes a support plate main body and an adhesive layer. The support plate system has a first surface facing the sputtering target and is formed of a first metal material. The adhesion layer includes a second surface material coated with a bonding material made of an alloy of indium, tin or the like, and includes a second metal material having higher wettability with respect to the bonding material than the first metal material. And formed on the first surface described above. In the above-mentioned support plate, since the adhesive layer is formed of a material having a higher wettability with respect to the constituent material of the support plate body, a high adhesion can be obtained between the adhesive layer and the joined material. The adhesion layer may be formed of a metallization layer formed by an alloy phase of the first metal material and the second metal material. Thereby, the metallized layer can be integrated with the first surface of the support plate body, and the metallized layer can be prevented from being peeled off from the first surface. Further, since the above-mentioned alloy phase contains a metal material having high wettability to the bonding material, it is possible to provide adhesion to the bonding material of 6 323 678 201226613 liter. The first metal material and the second metal material forming the metallization layer of the support plate are not particularly limited and may be arbitrarily selected. For example, examples of the first metal material include copper, indium, titanium, copper, or the like, or stainless steel. Examples of the second metal material include copper, nickel, aluminum, and tin. , indium, gold, silver, or alloys of these. Among them, for example, the first metal material is molybdenum or an alloy thereof, and the second metal material is a combination of nickel or an alloy thereof. The method of forming the above metallization layer is also not particularly limited. For example, the metallization layer can be formed by discharge treatment. Thereby, the metallized layer can be easily formed. The adhesion layer may be formed of a metal plate formed of the second metal material and joined to the first surface. The metal plate is joined to the first surface of the support plate body to form a metallization layer of the support plate body. Since the metal plate is formed of a material having a more southergic property to the material of the support plate than the material of the support plate, high adhesion can be obtained between the metal plate and the joint material. Further, since the metal plate is integrally joined to the support plate body, a high peeling strength to the support plate body can be obtained. The joining method of the metal plate to the support plate body is not particularly limited, and for example, explosive joining, diffusion bonding, welding, or the like can be applied. Thereby, it is possible to avoid the problem of disposal of waste liquid or generation of gas. The first metal material forming the support plate main body and the second metal material forming the metal plate are not particularly limited and may be arbitrarily selected. For example, in the case of the first 323678 201226613 metal material, it is possible to use: Ti (titanium), Ti alloy or stainless steel, and for the second metal material, it can be used: Cu (copper), Ni (recorded), A1 (aluminum) Or such alloys. Since the support plate made of Ti (titanium), Ti alloy or stainless steel as a base material has a large Young's modulus and high strength, the expansion due to water pressure is small. Therefore, such a support plate is used, for example, in a target which is highly brittle in sintering. Since the thermal expansion coefficient of the niobium and the Ti alloy is small, the support plate using the material as the substrate is, for example, ITO (Indium Tin 〇xide; indium tin oxide), GZ 〇 (Gallium-doped Zinc Oxide; gallium zinc oxide ()) used in low thermal expansion dryness. Since Ti, Ti alloy and stainless steel are low in wettability due to bonding with 1η (indium) or Sn (tin) due to your τ γ 螂, a metal plate formed of Cu, Ni, M, etc. is formed. The joint surface* ensures good adhesion to the above-mentioned joining material. The metal plate may be divided into a plurality of divided pieces and connected to the first surface. Thereby, warping or deformation of the support plate due to the difference in the coefficient of expansion of the support plate body and the plate can be suppressed. The present invention is an embodiment of the present invention, which comprises a dry material for splashing money, a support plate body, a joint layer, and an adhesive layer. The above-mentioned support plate system is formed to face the above-mentioned series and is formed of a first metal material. Further, the bonding layer is formed on the bonding material of the material and the i-th surface. The adhesion layer has a second surface coated with the bonding material, and contains a metal material of the first 323678 8 201226613 which is more sturdy to the bonding material (4), and is formed on the first surface. In the above dry material assembly, the adhesion layer is formed of a material having a higher wettability to the bonding material than the constituent material of the support plate body. Therefore, high adhesion can be obtained between the material and the material. A target for sputtering according to an embodiment of the present invention includes a target body and a metallization layer. The above target system has a joint surface coated with a bonding material formed of indium, tin or an alloy thereof, and is formed of a first metal material. The metallization layer is formed on the joint surface and is composed of an alloy phase of the first metal material and the second metal material, and the second metal material has a higher pressure than the first metal material for the joint material. Wet. The metallization layer is composed of an alloy phase of the first and second metal materials. Thereby, the joint surface of the metallized layer and the target body can be integrated, and the metallized layer can be prevented from peeling off from the joint surface. Further, since the above alloy phase contains a metal material having high wettability to the bonding material, the adhesion to the bonding material can be improved. The first metal material and the second metal material forming the metallization layer of the target are not particularly limited and may be arbitrarily selected. For example, examples of the first metal material include copper, aluminum, titanium, molybdenum, or an alloy thereof, or stainless steel. Examples of the second metal material include copper, nickel, aluminum, and tin. Indium, gold, silver, or alloys of these. Among them, a combination of, for example, a first metal material of ruthenium or an alloy thereof and a second metal material of nickel or an alloy thereof can be suitably used. 9 323678 201226613 Hereinafter, embodiments of the present invention will be described with reference to the drawings. <First Embodiment> [Dry Material Assembly] Fig. 1 is a cross-sectional view schematically showing a target assembly according to an embodiment of the present invention. The target assembly 10 of the present embodiment has a support plate body 1, a target 2, and a bonding layer 3. The bonding layer 3 is formed by bonding a bonding material of the support plate main body 1 and the target 2, for example, a consumable material composed of In, Sn or an alloy thereof. The target assembly 10 is provided in a sputtering apparatus (not shown). The support plate 1 is connected to a direct current, alternating current or RF power source, and the target 2 is disposed to face the substrate surface in the vacuum chamber at a predetermined interval. The target assembly 10 has a structure cooled by, for example, cooling water, and the water-cooled support plate 1 prevents excessive temperature rise of the target 2 at the time of the money, and prevents peeling of the target 2 due to melting of the bonding layer 3. Wait. The target assembly 10 is combined with a magnetic field unit (not shown) to constitute a magnetron type cathode-extinguishing cathode. [Support Plate] Fig. 2 is a cross-sectional view of the support plate 1. The support plate 1 has a metal support plate body 11 and a metallization layer 12 (first metallization layer). The support plate body 11 has a joint surface 11a. The target 2 is joined to the joint surface 11a via the joint layer 3. Various metal materials are used for the metal material (first metal material) forming the support plate main body 11. Examples thereof include Cu, Al, Ti, Mo, or alloys thereof, or non-mineral steel. The support plate main body 11 has a circulation path inside which cooling water is not shown. The support plate main body 11 is not limited to the structure having the above-mentioned circulation passage 10 323678 201226613, and may be a surface opposite to the joint surface 11a and a cooling surface. Further, the support plate body u is not limited to the case of the shape: water contact, and for example, as shown in Fig. 3, it may be a plate-shaped cross-sectional shape called Tian Pingchun. The hat-shaped metallization layer 12 is formed on the joint surface 11a, the metal J constitutes a base material (first metal material) of the support plate main body 11, and the layer 12 is bonded to the layer 3 (in, Sn, etc.) a higher wettability than the metal phase of the metallized metal (second metal material) of the metal material, which serves as a lifting support body Η and a bonding layer / 'metallization layering' The function of the close layer. In the case of the adhesion between the bonding material such as In, Sn, etc., it may be exemplified by Cu, Ni, Al, Sn, ln, Au, a metal material, and gold, in order to constitute the metal of the support plate body 11. The material type g or the combination of the above is in the embodiment, and the support plate main body 11 is appropriately selected from the household. Ni is used for the metal system. Fig. 4 illustrates a method of forming the metallization layer 12, and the formation layer 12 is formed by discharge treatment. As shown in the diagram of Figure 4. The metal electrode rod 15 is pinned to the joint surface 1 by a predetermined gap, and the rod 15 for discharge is made of a metallized metal (in this example, the Ni_a phase is arranged in a fresh direction. When the metallized metal of the electric Ua is processed, By applying a predetermined voltage between the joint faces 11, a discharge is generated between the electrode rods 15 and the support plate surface 11a. Thereby, the front end and the joint of the joint faces are formed by The Ni particles scattered from the electrode rod 15 and the gold base material (M〇) are moved on the joint surface 11a, whereby the metal 201226613 layer 12 is formed on the entire surface of the joint surface 15 of the electrode rod 15 system 3. The metallization metal treatment conditions of 11a are not particularly limited, and for example, a pulse power source having a voltage of 150 V and a capacitor capacity of 4 〇 eF or a pulse power source having a voltage of 100 V and a capacitor capacity of 10 Å can be used as a power source. The thickness of the metallization layer 12 is It is not particularly limited as long as the surface layer of the joint surface 11a can be metalized. Since the metallization layer 12 is integrally formed with the joint surface 11a of the support plate main body 11, the metallization layer 12 is prevented from being peeled off from the joint surface 11a. In addition to the composition of gold Since the alloy phase of the layer 12 contains a metal material (metallized metal) having high wettability with respect to the bonding material, adhesion to the bonding material can be improved. [Dry material] Fig. 5 is a cross section of the target 2 The target 2 has a metal target body 21 and a metallization layer 22 (second metallization layer). The target body 21 has a joint surface 21a. A joint plate is joined to the joint surface 21a via the joint layer 3 Main body 1. Various metal materials are used for the metal material (first metal material) forming the target body 21, and examples thereof include Cu, Al, Ti, Mo, or alloys thereof, stainless steel, and the like. 21 may be a cast body of a raw material metal or a sintered body of a raw material powder. The target body 21 may be adjusted to a size, a thickness, a shape, and a structure suitable for sputtering applications. The metallized layer 2 2 is formed in the joint. Surface 21d. The metallization layer 2 2 is made of a base material (first metal material) constituting the target body 21, and a bonding material (In, Sn, etc.) constituting the bonding layer 3 is more moisturized than the metal material. Wet 12 323678 201226613 Metallized Metal (No. The metal phase is formed by an alloy phase. The metallization layer has a function of enhancing the adhesion layer between the support plate body n and the bonding layer 3. The metallized metal is exemplified by Cu% Ni. , Abu%, work
An、Ag或此等之合金’因應構成乾材本體2ι的金屬 之種類而適當地選擇。在本實施形態中，靶材本體2丨由An, Ag or these alloys ' are appropriately selected depending on the kind of metal constituting the dry material body 2i. In this embodiment, the target body 2
Mo所構成，金屬化金屬係使用以。金屬化層22係藉與 上述支承板本體11的接合面lla之金屬化層12的形成 法同樣之放電處理而形成。 由於金屬化層22係與靶材本體21之接合面2ι 地形成，因而防止金屬化層22自接合面…剝離 體 由於構成金屬化層22的合金相含有對於接合材 =性的金屬材料（金屬化金屬），故可提升與接合材的^ 如以上方式構成之支承板本體1及把材2，係在使各 個之接合面lla、21a互相對向之狀態下，隔著熔融狀態之 接合材而雜。此時，由於在各接合面Ua、…形成金屬 化層12、22 ’故能確保在接合面之全區域與接合材的良好 /門/,、’、fi因此，使接合材硬化而形成的接合層3，係可對 於支承板本體1絲材2雙方得到良好之密著性。 此外依據本實施形態，因為金屬化層12、22係藉由放 電處理而形成，且由於與電鍍或助熔劑處理不同而不需要 廢液處理，因此對環境之負荷小。此外，藉由放電處理所 進行之金屬化金屬化也沒有放出氣體之問題，因而可形成 323678 13 201226613 高品質的濺鍍膜。 〈第2實施形態〉 [乾材總成] #从滅成的系 第6圖係表米本發明的其他實施形態之^板。31、輕 意剖面圖。本實施形態之靶材總成30具有支承 材32、及接合層33。 >讨，例 接合層係接合支承板3丨與把材32的接15 如，以In、Sn成此等之合金所構成的焊材來形成。振31 靶材總成30係設置在未圖示的濺鍍裝置。^内之 係與直流、交流成RF電源連接，粑材32係與真>3〇具有 基板表面隔開預定之間隔而相對向配置。靶材總成而防止 例如藉由冷卻水冷卻的構造，藉由將支承板水冷而刺離 濺鍍時的靶材32之過度升溫、因接合層33的熔融 ' 而 乾材32等。把讨總成係與未圖禾的磁場單元解口 構成為磁控管裂藏艘陰極。 [支承板] 具有精 第7圖係支承板31的分解剖面圖。支承板31广 層金屬製的支承板本體311及金屬板312之構造。 支承板本體311具有接合面311a(第1面）。在接θ 311a係隔著接合層33而接合有靶材32。形成支承板f， 311之金屬材料（第1金屬材料）係使用各種之金屬讨科。 例如可列舉Cu、A1、Ti、Mo、或此等合金或是不鏽鋼等鏽 在本實施形態中，支承板本體311係以Ti、Ti合金或不 鋼等所形成。 323^78 201226613Made of Mo, metallized metal is used. The metallization layer 22 is formed by the same discharge treatment as the formation of the metallization layer 12 of the joint surface 11a of the support plate main body 11. Since the metallization layer 22 is formed on the joint surface 2 of the target body 21, the metallization layer 22 is prevented from being self-joined. The peeling body contains a metal material (metal) for the bonding material. In addition, the support plate main body 1 and the material 2 which are configured as described above are provided in a state in which the respective joint faces 11a and 21a are opposed to each other, and the joint material in a molten state is interposed. And miscellaneous. At this time, since the metallization layers 12 and 22' are formed on the respective joint faces Ua, ..., it is possible to ensure the good/door/,, and fi of the joint material in the entire region of the joint surface, thereby curing the joint material. The bonding layer 3 can provide good adhesion to both of the wires 2 of the support plate body 1. Further, according to the present embodiment, since the metallization layers 12 and 22 are formed by the discharge treatment, since the waste liquid treatment is not required unlike the plating or the flux treatment, the load on the environment is small. In addition, the metallization metallization by the discharge treatment does not cause a problem of gas evolution, so that a high-quality sputtering film of 323678 13 201226613 can be formed. <Second embodiment> [Dry material assembly] #从灭系系 Figure 6 is a diagram of another embodiment of the present invention. 31. Light profile. The target assembly 30 of the present embodiment has a support member 32 and a bonding layer 33. <Examples] The joining layer of the joining layer supporting plate 3 and the material 32 is formed, for example, by a welding material composed of an alloy of In and Sn. The vibration 31 target assembly 30 is provided in a sputtering apparatus (not shown). The system is connected to the DC power source and the RF power source, and the coffin 32 is disposed opposite to the true surface of the substrate with a predetermined interval therebetween. The target assembly is prevented from being cooled by the cooling water, for example, by water-cooling the support plate, thereby excessively raising the temperature of the target 32 during sputtering, and drying the material 32 due to melting of the bonding layer 33. The solution of the magnetic field unit of the assembly system and the unillustrated structure is formed as a cathode of the magnetron. [Support Plate] An exploded cross-sectional view of the support plate 31 of the seventh embodiment. The support plate 31 has a structure in which a metal support plate body 311 and a metal plate 312 are widely laminated. The support plate body 311 has a joint surface 311a (first surface). The target 32 is joined to the connection θ 311a via the bonding layer 33. The metal material (first metal material) forming the support plates f and 311 is a metal for use. For example, Cu, A1, Ti, Mo, or alloys such as stainless steel or stainless steel may be used. In the present embodiment, the support plate main body 311 is formed of Ti, a Ti alloy, or stainless steel. 323^78 201226613
Ti、Ti合金及不鏽鋼的楊氏係數大、強度高。因此將 Ti、Ti合金或不鏽鋼當作基材之支承板，其因水壓而產生 之膨脹少。因此’例如燒結靶材般之高脆性靶係使用此種 的支承板°此外，由於Ti及Ti合金的熱膨脹係數小，因 此將此等的材料當作基材之支承板，係使用在例如ΙΤ0 (Indium Tin 〇xide ;銦錫氧化物）、GZ〇(Gallium-doped Zinc Oxide ;鎵鋅氧化物）等熱膨脹小的靶材。 支承板本體311在内部具有未圖示之冷卻水之循環通 路。支承板本體311係並不限定於在内部具有上述循環通 路之構造’也可以為與接合面3lla相反侧之面與冷卻水接 觸之冷卻面。此外，支承板本體311並不限定於形成單純 之板形狀的例子，也可以為如第8圖所示之稱為所謂帽子 型的剖面形狀。 金屬板312係具有接合面312a(第2面）。接合面312a 係形成在與支承板本體311相對向之面的相反侧之面。在 接合面312a塗布有構成接合層33的接合材。 金屬板312係接合在接合面311a而構成支承板本體 311之金屬化層。金屬板312係由構成支承板本體Mi之 金屬基材（第1金屬材料）、及對於構成接合層33之接合材 Sn等）比該金屬材料具有局潤濕性的金屬化金屬（第2 金屬材料）所構成。金屬板312係發揮作為提升支承板本體 與接合層33之間之密著性的密著層之功能。金屬板312 之厚度並無特別限定，例如係在〇. lmra以上1. 〇mm以下。 就對於In、Sn等接合材具有高潤濕性的金屬材料而 323678 15 201226613 言，可以列舉：Cu、Ni、μ、Sn、In、Au、Ag或此等之合 金，因應構成支承板本體3U的金屬材料種類而適當選 擇。在本實施形態中，係以Cu、Ni、A1或此等之合金來形 成金屬板312。 纟本實施形態中，支承板本體311的構成材料係使用 Ti、Ti合金或不鏽鋼。由於Ti、Ti合金、不鏽鋼等與in 或Sn等接合材的潤濕性低，故將由Cu、Ni、A1等所形成 的金屬板321形成在接合面3Ua，即可確保與接合材的良 好密著性。 對支承板本體接合金屬板之方法並無特別限定，在本 實施形態係採用爆炸接合法。 爆炸接合法係將當火藥爆發時在極短時間内產生之高 心量利用在金；s間之接合的方法，也稱為爆發溶接或是爆 發壓接。第9圖說明藉由爆炸接合接合支承板本體與 金屬板312之方法的示意圖。如第9圖（A)所示，在支承板 本體311之接合面311a，對向配置有金屬板312。在金屬 ，312之背面側（圖中上面侧）係隔著緩衝材341設置有火 藥層342’在火藥層342之一端（圖中左端）安裝有雷管 343。如帛9圖（B)所示，使雷管343起爆而使火藥層342 向圖中右方依序爆發。金屬板312係形成預定角度而與接 合面311a碰撞，藉由自碰撞點產生之金屬喷流而去除金屬 表面之氧化被膜等。如上述方式自碰撞點依序地在金屬板 312與接合面311a清淨之表面彼此相接合。 在支承板本體311與金屬板312之接合步驟中，係除 323678 16 201226613 了上述以外’也可以制摩擦接合法或擴散接合法等其他 固相接合法，也可以採用使用焊材之焊接法。 . [靶材] . ㈣32也可以為原料金屬之鑄造體，也可以為原料粉 末的燒，體。本實施形態的乾材32係由ιτ〇、⑽等透明 導電性氧化物所成之燒結體來形成。㈣32係分 適於濺鍍用途之大小、厚度、形狀、組織。 成 如Μ上所構成的支承板31及乾材犯，係在使各個之 操口互相對向之狀態下，隔著炼融狀態的接合材而黏 貼。此時之支承板31侧的接合面，由於係由對於接合材比 支承=本體311之構成材料具有更高潤濕性的材料所構成 的金板312來覆蓋，故能確保在接合面312&之全域與接 合材之良好的潤濕性。接合層33係以硬化接合材來形成。 依據以上之本實施形態’可以得到支承板31與接合層 33之一良好的密著性。此外’由於金屬板312與支承板本體 311體化接合’故對於支承板本體311可得到高的剝離 強度。 此外依據本實施形態’由於形成金屬化層的金屬板312 係與支承板本體311 一體化接合，故與電鍵或助嫁劑處理 不同而不需要廢液處理，對環境之負荷亦小。此外，由於 沒有放出氣體之問題’故可以形成高品質之賤鏟膜。 再者，依據本實施形態，由於支承板本體311為以熱 膨脈係數較小的Ti來形成，故因熱而引起之翹曲或變形比 較少。因此’靶材32即使如IT〇燒結體般為脆性高的材料， 323678 17 201226613 也不會產生破裂或龜裂，可以穩定地來維持乾材32。 依擄本發明人等的估算，在寬200mm、長度3000fflin、 厚度16mni的板狀支承板上，黏接寬度200mm、長度2700mm、 厚度8mni的ITO靶材之靶材總成中，Cu製支承板的靶材之 翹曲量為4. 3mm時，則Ti製支承板的靶材之翹曲量可以降 低到1. 0mm為止。 以上，雖說明有關本發明之實施形態，但本發明並沒 有限疋在此等實施形態，可根據本發明的技術思想而進行 各種之變形。 例如在以上之實施形態中，支承板絲材係分別以同 種之金屬材料來形成，但並不限定此等，也可以分別以異 種之金屬材料來形成。 此外，構成金屬化層12、22的合金相並不僅限定母材 及金屬化金屬之合金，也可％此等之混合相、化合物相， 也可為金屬化金屬單相。 再者，金屬板312係與支承板本體311之接合面 之全區域接合，但科限定於此，也可以如第/圖所示之 金屬板312接合在接合面31^之一部份區域。 此外々第U圖㈣’金屬板312亦可料成複數個 t割片m而接合在接合面3lla。藉此，可叫卩制起因於 支承板本體311與金屬板312的熱膨脹係數差所導致之支 承板的翹曲或變形β各分割片12 m . 的形狀及大小可以為相Ti, Ti alloy and stainless steel have large Young's modulus and high strength. Therefore, Ti, Ti alloy or stainless steel is used as the support plate of the substrate, and the expansion due to the water pressure is small. Therefore, for example, a high-brittle target such as a sintered target uses such a support plate. Further, since the thermal expansion coefficients of the Ti and the Ti alloy are small, these materials are used as a support plate for the substrate, and are used, for example, in ΙΤ0. (Indium Tin idexide; indium tin oxide), GZ 〇 (Gallium-doped Zinc Oxide; gallium zinc oxide) and other targets with small thermal expansion. The support plate main body 311 has a circulation path of cooling water (not shown) inside. The support plate main body 311 is not limited to the structure having the above-described circulation passage therein, and may be a cooling surface that is in contact with the cooling water on the surface opposite to the joint surface 31a. Further, the support plate main body 311 is not limited to the example in which a simple plate shape is formed, and may be a cross-sectional shape called a hat type as shown in Fig. 8. The metal plate 312 has a joint surface 312a (second surface). The joint surface 312a is formed on the opposite side of the surface opposite to the support plate body 311. A bonding material constituting the bonding layer 33 is applied to the bonding surface 312a. The metal plate 312 is joined to the joint surface 311a to constitute a metallization layer of the support plate body 311. The metal plate 312 is a metallized metal (second metal) having a metal substrate (first metal material) constituting the support plate main body Mi and a bonding material Sn constituting the bonding layer 33, etc., which is more wettable than the metal material. Material). The metal plate 312 functions as an adhesive layer for improving the adhesion between the support plate main body and the bonding layer 33. The thickness of the metal plate 312 is not particularly limited, and is, for example, 〇. For metal materials having high wettability for bonding materials such as In and Sn, 323678 15 201226613, for example, Cu, Ni, μ, Sn, In, Au, Ag, or the like, may be cited, and the support plate body 3U is constituted. The type of metal material is appropriately selected. In the present embodiment, the metal plate 312 is formed of Cu, Ni, A1 or the like. In the present embodiment, the constituent material of the support plate main body 311 is Ti, a Ti alloy or stainless steel. Since Ti, Ti alloy, stainless steel, and the like have low wettability with a bonding material such as in or Sn, the metal plate 321 formed of Cu, Ni, A1 or the like is formed on the bonding surface 3Ua, thereby ensuring good adhesion to the bonding material. Sexuality. The method of joining the metal sheets to the support plate body is not particularly limited, and in the present embodiment, the explosion bonding method is employed. Explosive bonding is a method in which the high-volume generated in a very short period of time when a gunpowder breaks out is used in gold; the method of joining between s, also known as burst fusion or burst crimping. Fig. 9 is a view showing a method of joining the support plate body and the metal plate 312 by an explosion joint. As shown in Fig. 9(A), a metal plate 312 is disposed opposite to the joint surface 311a of the support plate main body 311. On the back side (upper side in the figure) of the metal 312, a gunpowder layer 342' is disposed via a cushioning material 341, and a detonator 343 is attached to one end (left end in the drawing) of the gunpowder layer 342. As shown in Fig. 9(B), the detonator 343 is detonated and the gunpowder layer 342 is sequentially ejected to the right in the figure. The metal plate 312 is formed at a predetermined angle to collide with the joint surface 311a, and the oxide film or the like on the metal surface is removed by the metal jet generated from the collision point. The surfaces of the metal plate 312 and the joint surface 311a are sequentially joined to each other from the collision point in the above manner. In the joining step of the support plate main body 311 and the metal plate 312, other solid phase joining methods such as a friction bonding method or a diffusion bonding method may be employed in addition to the above-mentioned 323,678, 2012, 2012, and the welding method using a welding material may be employed. [Target] (4) 32 may be a cast body of a raw material metal or a sintered body of a raw material powder. The dry material 32 of the present embodiment is formed of a sintered body made of a transparent conductive oxide such as ιτ〇 or (10). (4) 32 series points Suitable for the size, thickness, shape and structure of sputtering applications. The support plate 31 and the dry material constituting the ruthenium are adhered to each other in a state in which the respective operating surfaces are opposed to each other via a joining material in a molten state. At this time, the joint surface on the side of the support plate 31 is covered by the gold plate 312 which is made of a material having a higher wettability with respect to the constituent material of the support body 311, so that it can be secured at the joint surface 312 & Good wettability of the whole domain and the joint material. The bonding layer 33 is formed by hardening a bonding material. According to the above embodiment, it is possible to obtain good adhesion between the support plate 31 and the bonding layer 33. Further, since the metal plate 312 and the support plate body 311 are physically joined, a high peeling strength can be obtained for the support plate body 311. Further, according to the present embodiment, since the metal plate 312 forming the metallization layer is integrally joined to the support plate main body 311, it is different from the electric bond or the grafting agent treatment, and the waste liquid treatment is required, and the load on the environment is also small. In addition, since there is no problem of gas evolution, a high-quality shovel film can be formed. Further, according to the present embodiment, since the support plate main body 311 is formed of Ti having a small thermal expansion coefficient, the warp or deformation ratio due to heat is small. Therefore, even if the target material 32 is a material having high brittleness like the IT 〇 sintered body, 323678 17 201226613 does not cause cracking or cracking, and the dry material 32 can be stably maintained. According to the estimation by the inventors of the present invention, in a plate-shaped support plate having a width of 200 mm, a length of 3000 fflin, and a thickness of 16 mni, a target assembly of an ITO target having a width of 200 mm, a length of 2700 mm, and a thickness of 8 mni is bonded, and a Cu-made support plate is used. 0毫米左右。 The amount of warpage of the target of the support plate of the support plate can be reduced to 1. 0mm. The embodiments of the present invention have been described above, but the present invention is not limited to the embodiments, and various modifications can be made based on the technical idea of the present invention. For example, in the above embodiments, the support plate wires are each formed of the same metal material, but the present invention is not limited thereto, and may be formed of a different metal material. Further, the alloy phase constituting the metallization layers 12 and 22 is not limited to an alloy of a base material and a metallized metal, and may be a mixed phase or a compound phase, or a metallized metal single phase. Further, the metal plate 312 is joined to the entire area of the joint surface of the support plate main body 311. However, the metal plate 312 may be joined to a portion of the joint surface 31 as shown in Fig. 3 . Further, the U-shaped (fourth) metal plate 312 may be formed into a plurality of t-cut pieces m and joined to the joint surface 31a. Thereby, the shape or size of each of the divided pieces 12 m of the support plate caused by the difference in thermal expansion coefficient between the support plate body 311 and the metal plate 312 can be called.
同者，也可以為相異者。分割H ㈣ Μ 121的配置間隔並無特別 限疋，例如可以在_以下。藉此，可以持續防止起因於 323678 18 201226613 熱膨脹係數差所導致之支承板31的翹曲或變形，且可以確 保與接合層33的高密著性。 【圖式簡單說明】‘ 第1圖係示意表示本發明的一實施形態之靶材總成構 成的剖面圖。 第2圖係示意表示本發明的一實施形態之支承板構成 的剖面圖。 第3圖係示意表示本發明的一實施形態之支承板構成 的變形例之剖面圖。 第4圖係說明本發明的一實施形態之支承板製造方法 的示意圖。 第5圖係示意表示本發明的一實施形態之乾材構成之 剖面圖。 第6圖係示意表示本發明的其他實施形態之靶材總成 構成的剖面圖。 第7圖係示意表示本發明的其他實施形態之支承板構 成的分解剖面圖。 第8圖係示意表示本發明的其他實施形態之支承板變 形例的剖面圖。 第9圖（A)及（B)係說明本發明的其他實施形態之支承 板製造方法的示意圖。 第10圖係表示本發明的其他實施形態之支承板的變 形例之圖，（A)係平面圖、（B)係側面圖。 第11圖係表示本發明的其他實施形態之支承板的其 19 323678 201226613 他變形例之圖，（A)係平面圖、（B)係侧面圖。 【主要元件符號說明】 卜31 支承板 2 ' 32 靶材 3 ' 33 接合層 10、30 乾材總成 11 > 311 支承板本體 11a、21a、311a 接合面 12、22 金屬化層 15 電極棒 21 乾材本體 312 金屬板The same person can also be a different person. There is no special limit to the division interval of H (four) Μ 121, for example, it can be below _. Thereby, the warpage or deformation of the support plate 31 caused by the difference in thermal expansion coefficient of 323678 18 201226613 can be continuously prevented, and the high adhesion with the bonding layer 33 can be ensured. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the configuration of a target assembly according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing the structure of a support plate according to an embodiment of the present invention. Fig. 3 is a cross-sectional view showing a modification of the configuration of the support plate according to the embodiment of the present invention. Fig. 4 is a schematic view showing a method of manufacturing a support plate according to an embodiment of the present invention. Fig. 5 is a cross-sectional view showing the structure of a dry material according to an embodiment of the present invention. Fig. 6 is a cross-sectional view schematically showing the configuration of a target assembly according to another embodiment of the present invention. Fig. 7 is a schematic cross-sectional view showing the structure of a support plate according to another embodiment of the present invention. Fig. 8 is a cross-sectional view showing a modified example of a support plate according to another embodiment of the present invention. Fig. 9 (A) and (B) are views showing a method of manufacturing a support plate according to another embodiment of the present invention. Fig. 10 is a view showing a modification of the support plate according to another embodiment of the present invention, wherein (A) is a plan view and (B) is a side view. Fig. 11 is a view showing a modification of the support plate according to another embodiment of the present invention. Fig. 11 is a view showing a modification of the embodiment, (A) is a plan view, and (B) is a side view. [Main component symbol description] 卜 31 support plate 2 ' 32 target 3 ' 33 joint layer 10, 30 dry material assembly 11 > 311 support plate body 11a, 21a, 311a joint surface 12, 22 metallization layer 15 electrode rod 21 dry material body 312 metal plate