201212307 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體發光裝置，特別涉及一種發光二 極體封裝結構。 【先前技術】 [0002] 通常，在製作發光二極體封裝結構時，採用固晶膠將發 光二極體晶粒固定於基座上。然，由於固晶膠的導熱性 能相對較低，從而發光二極體晶粒在工作狀態下所產生 ^ 的熱量不能被迅速傳遞到基座上，降低整個發光二極體 封裝結構的散熱性能’縮短發光二極體晶粒的使用壽命 【發明内容】 「 [0003] 有鑒於此，有必要提供一種具較佳散熱性能的發光二極 體。 [0004] 一種發光二極體封裝結構，包括發光二極體晶粒、封裝 體及基座，該發光二極體晶叔固定於該基座上，該封裝 Ο 體包覆4發光一極.體.晶粒，該發光二極體晶粒與該基座 之間設置一導熱基板，該導熱基板包括相對設置的第一 表面及第二表面，發光二極體晶粒貼附於導熱基板的第 一表面上，發光二極體晶粒與導熱基板貼合處為接觸面 ，導熱基板的第一表面的面積大於發光二極體晶粒的接 觸面的面積’導熱基板的第二表面固定在基座上。 闺上述的發光二極體封I結構的發光二極體晶粒與基座之 間設置導熱性能較佳的導熱基板，且導熱基板的面積相 對較大，從而發光二極體晶粒所產生的熱量可以較快的 099130791 表單編號 A0101 g 〇 W/il 〇g 201212307 傳遞到基座上，提高整個發光二極體結構的散熱性能， 延長其使用壽命。 [0006] 下面參照附圖，結合具體實施例對本發明作進一步的描 述。 【實施方式】 [〇〇〇7] 請參閱圖1，本發明實施方式提供的發光二極體封裝結構 10，包括基座11、導熱基板13、發光二極體晶粒12及封 裝體15。 [0008] 基座11包括上表面110及下表面111，上表面110與下表 面111相對設置。基座11内凹形成一收容孔112，基座11 於收容孔112的外圍形成一内壁面113，基座11於收容孔 112的底部形成一底面114 〇該收容孔112提供發光二極 體晶粒12及封裝體15的容置空間，其上寬下窄，基座u 的内壁面113自上表面110向底面114方向並沿徑向向内 傾斜。 ：：.....201212307 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a semiconductor light emitting device, and more particularly to a light emitting diode package structure. [Prior Art] [0002] Generally, in the fabrication of a light-emitting diode package structure, a solid crystal die is used to fix the light-emitting diode die to the susceptor. However, since the thermal conductivity of the solid crystal glue is relatively low, the heat generated by the light-emitting diode die in the working state cannot be quickly transmitted to the susceptor, thereby reducing the heat dissipation performance of the entire light-emitting diode package structure. Shortening the service life of the light-emitting diode die [Summary of the Invention] [0003] In view of the above, it is necessary to provide a light-emitting diode having better heat dissipation performance. [0004] A light-emitting diode package structure including light-emitting a diode die, a package body and a pedestal, wherein the light-emitting diode crystal is fixed on the susceptor, and the package body is covered with 4 light-emitting diodes, crystal grains, and the light-emitting diode grains and A thermally conductive substrate is disposed between the pedestals, the thermally conductive substrate includes a first surface and a second surface disposed opposite to each other, and the illuminating diode die is attached to the first surface of the thermally conductive substrate, and the illuminating diode die and the heat conducting The substrate bonding portion is a contact surface, and the area of the first surface of the heat conductive substrate is larger than the area of the contact surface of the light emitting diode die. The second surface of the heat conductive substrate is fixed on the base. 闺 The above-mentioned light emitting diode package I Structural luminescence A thermally conductive substrate having a better thermal conductivity is disposed between the polar body and the pedestal, and the area of the thermally conductive substrate is relatively large, so that the heat generated by the illuminating diode dies can be faster. 099130791 Form No. A0101 g 〇W/ The il 〇g 201212307 is transmitted to the pedestal to improve the heat dissipation performance of the entire illuminating diode structure and prolong its service life. [0006] Hereinafter, the present invention will be further described with reference to the accompanying drawings. Referring to FIG. 1 , a light emitting diode package structure 10 according to an embodiment of the present invention includes a susceptor 11 , a heat conductive substrate 13 , a light emitting diode die 12 , and a package 15 . 11 includes an upper surface 110 and a lower surface 111. The upper surface 110 is opposite to the lower surface 111. The base 11 is recessed to form a receiving hole 112. The base 11 defines an inner wall surface 113 at the periphery of the receiving hole 112. The bottom surface of the receiving hole 112 defines a bottom surface 114. The receiving hole 112 provides a space for the LED die 12 and the package body 15 to be wide and narrow. The inner wall surface 113 of the base u is from the upper surface 110 to the bottom surface. 114 directions and Radially inwardly inclined. :: .....
[00〇9] 導熱基板13由高導熱材料製成，例如梦、陶瓷或者銅等 金屬材料。導熱基板13呈薄板狀，其包括相對設置的第 一表面131及第二表面132，第一表面131位於導熱基板 13的頂端，第二表面132位於導熱基板13的底端。發光二 極體晶粒12貼附於導熱基板13的第一表面131上，發光二 極體晶粒12與導熱基板13貼合處為接觸面121。導熱基板 13的第一表面131的面積大於發光二極體晶粒12的接觸面 121的面積，優選地，導熱基板13的第一表面131的面積 不小於發光二極體晶粒12的接觸面121的面積的兩倍。 099130791 表單編號A0101 第4頁/共12頁 0992054017-0 201212307 L0010J 當導熱基板13的材料為矽，導熱基板13與該發光二極體 晶粒12採用金屬接合方法（metal bonding)結合在一起 。當導熱基板13的材料為陶瓷，導熱基板13與該發光二 極體晶粒12的結合方法可以採用金屬結合方法、溶膠凝 膠方法或者塗布方法其中一種。當導熱基板13的材料為 金屬，導熱基板13與該發光二極體晶粒12的結合方法可 以採用蒸鍍、電鍍、化學鍍或者金屬接合。 [0011] 〇 發光二極體晶粒12與導熱基板13 —併收容於基座11的收 容孔112内，且導熱基板13的第二表面132固定在基座11 的底面114上，導熱基板13與基座11之間藉由黏貼材料 14 (固晶膠或者銀膠）固定。封裝體15填充於基座11的 收容孔112中，且包覆發光二極體晶粒12及導熱基板13。 [0012] ❹ 發光二極體封裝結構10工作時，發光二極體晶粒12所產 生的熱量依次傳遞到導熱基板13、黏貼材料14及基座11 ，並最終藉由基座11散發。由於導熱基板13相對黏貼材 料14具有較高的導熱係數，發光二極體晶粒12所產生的 熱量可以迅速傳遞到導熱基板13的整個第一表面131上， 且導熱基板13的第一表面131的面積大於發光二極體晶粒 12的接觸面121的面積，這使得導熱基板13與黏貼材料 14之間藉由導熱基板13具有面積較大的熱接觸介面，熱 量可以較為分散的藉由導熱基板13傳遞到黏貼材料14， 進而傳遞到基座11，從而提高整個發光二極體封裝結構 10的熱傳導效率，延長發光二極體封裝結構10的使用壽 [0013] 下面以具體實驗資料說明本發明的較佳實施方式的發光 099130791 表單編號A0101 第5頁/共12頁 0992054017-0 [0013] 201212307 二極體封裝結構ίο比習知發光二極體封裝結構的散熱性 能強，其中發光二極體晶粒12的尺寸規格均為lmm2，導 熱基板13的第一表面面積為2. 25mm2。從圖2和圖3可以 看出，在相同的測試條件下，本發明的較佳實施方式的 發光二極體封裝結構10的飽和電流為9 0 0 m A，而習知技術 的發光二極體封裝結構的飽和電流僅為450mA。 [0014] 綜上所述，本發明符合發明專利要件，爰依法提出專利 申請。惟，以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在爰依本發明精神所作之等效修 飾或變化，皆應涵蓋於以下之申請專利範圍内。 【圖式簡單說明】 [0015] 圖1為本發明一實施例的發光二極體封裝結構的剖面示意 圖。 [0016] 圖2為圖1中發光二極體封裝結構的的電流—發光強度曲線 圖。 [0017] 圖3為一種發光二極體封裝結構的電流-發光強度曲線圖 〇 【主要元件符號說明】 [0018] 發光二極體封裝結構：10 [0019] 基座：11 [0020] 上表面：110 [0021] 下表面：111 [0022] 收容孔：112 099130791 表單編號A0101 第6頁/共12頁 0992054017-0 12 201212307[00〇9] The thermally conductive substrate 13 is made of a highly thermally conductive material such as a metal material such as a dream, ceramic or copper. The heat conductive substrate 13 has a thin plate shape including a first surface 131 and a second surface 132 which are oppositely disposed. The first surface 131 is located at the top end of the heat conductive substrate 13, and the second surface 132 is located at the bottom end of the heat conductive substrate 13. The light-emitting diode die 12 is attached to the first surface 131 of the heat-conducting substrate 13, and the light-emitting diode die 12 and the heat-conductive substrate 13 are bonded to each other at the contact surface 121. The area of the first surface 131 of the heat conductive substrate 13 is larger than the area of the contact surface 121 of the light emitting diode die 12 . Preferably, the area of the first surface 131 of the heat conductive substrate 13 is not less than the contact surface of the light emitting diode die 12 . The area of 121 is twice as large. 099130791 Form No. A0101 Page 4 of 12 0992054017-0 201212307 L0010J When the material of the heat conductive substrate 13 is 矽, the heat conductive substrate 13 and the light emitting diode die 12 are bonded by metal bonding. When the material of the heat conductive substrate 13 is ceramic, the bonding method of the heat conductive substrate 13 and the light emitting diode die 12 may be one of a metal bonding method, a sol gel method, or a coating method. When the material of the heat conductive substrate 13 is metal, the bonding method of the heat conductive substrate 13 and the light emitting diode die 12 may be vapor deposition, electroplating, electroless plating or metal bonding. The light emitting diode die 12 and the heat conducting substrate 13 are received in the receiving hole 112 of the base 11 , and the second surface 132 of the heat conducting substrate 13 is fixed on the bottom surface 114 of the base 11 , and the heat conducting substrate 13 is mounted on the bottom surface 114 of the base 11 . It is fixed to the susceptor 11 by an adhesive material 14 (solid glue or silver glue). The package body 15 is filled in the receiving hole 112 of the susceptor 11 and covers the light-emitting diode die 12 and the heat-conductive substrate 13. [0012] When the LED package structure 10 is in operation, the heat generated by the LEDs 12 is sequentially transferred to the thermally conductive substrate 13, the adhesive material 14, and the susceptor 11, and finally radiated by the susceptor 11. Since the heat conductive substrate 13 has a higher thermal conductivity relative to the adhesive material 14, the heat generated by the light emitting diode die 12 can be quickly transferred to the entire first surface 131 of the heat conductive substrate 13, and the first surface 131 of the heat conductive substrate 13 The area of the contact surface 121 of the LED die 12 is larger than that of the contact surface 121 of the LED substrate 12, so that the thermally conductive substrate 13 has a large thermal contact interface between the thermal conductive substrate 13 and the heat can be dispersed by heat conduction. The substrate 13 is transferred to the adhesive material 14 and further transferred to the susceptor 11, thereby improving the heat conduction efficiency of the entire LED package structure 10 and prolonging the service life of the LED package structure 10. [0013] The preferred embodiment of the invention emits light 099130791 Form No. A0101 Page 5 / Total 12 Page 0992054017-0 [0013] 201212307 Diode package structure ίοThe heat dissipation performance is better than the conventional LED package structure, in which the light emitting diode 25毫米。 The first surface area of the heat-conducting substrate 13 is 2. 25mm2. As can be seen from FIG. 2 and FIG. 3, under the same test conditions, the saturation current of the LED package structure 10 of the preferred embodiment of the present invention is 900 m A, while the conventional technology has a light-emitting diode. The body package has a saturation current of only 450mA. [0014] In summary, the present invention complies with the requirements of the invention patent, and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0015] FIG. 1 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention. 2 is a current-luminous intensity curve diagram of the light emitting diode package structure of FIG. 1. 3 is a current-luminous intensity curve diagram of a light emitting diode package structure [Main component symbol description] [0018] Light emitting diode package structure: 10 [0019] Base: 11 [0020] Upper surface :110 [0021] Lower surface: 111 [0022] Reception hole: 112 099130791 Form number A0101 Page 6 / Total 12 pages 0992054017-0 12 201212307
L0023JL0023J
[0024] [0025] [0026] [0027] [0028] [0029] Ο [0030] [0031] 内壁面：113 底面：114 發光二極體晶粒 接觸面：121 導熱基板：13 第一表面：1 31 第二表面：132 黏貼材料.14 封裝體：15 099130791 表單編號Α0101 第7頁/共12頁 0992054017-0[0028] [0029] [0029] [001] [0031] Inner wall surface: 113 Bottom surface: 114 Light-emitting diode die contact surface: 121 Thermally conductive substrate: 13 First surface: 1 31 Second surface: 132 Adhesive material. 14 Package: 15 099130791 Form number Α 0101 Page 7 / Total 12 pages 0992054017-0