[go: up one dir, main page]

TW201219989A - for installing a mechanism in the apparatus to cause the substrate to float and maintain the substrate in a non-contact manner so that there will be no exposure problem caused by the substrate floating - Google Patents

for installing a mechanism in the apparatus to cause the substrate to float and maintain the substrate in a non-contact manner so that there will be no exposure problem caused by the substrate floating Download PDF

Info

Publication number
TW201219989A
TW201219989A TW100123549A TW100123549A TW201219989A TW 201219989 A TW201219989 A TW 201219989A TW 100123549 A TW100123549 A TW 100123549A TW 100123549 A TW100123549 A TW 100123549A TW 201219989 A TW201219989 A TW 201219989A
Authority
TW
Taiwan
Prior art keywords
substrate
chuck
exposure
exposure apparatus
floating
Prior art date
Application number
TW100123549A
Other languages
Chinese (zh)
Inventor
Mikio Tokuyama
Naruo Watanabe
Nobuyuki Maki
Nobuhisa Komatsu
Ryouji Nemoto
Junichi Mori
Satoshi Takahashi
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201219989A publication Critical patent/TW201219989A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

In the method of supporting a substrate to come into touch with a chuck in an exposure apparatus, "back side transfer" may occur to copy the substrate holding shape due to dust attached to the substrate, or the substrate may have wrinkles because of the contact sequence between the substrate and the chuck, resulting in poor exposure. Therefore, this invention is installed with a mechanism on the chuck, which makes use of air to cause the substrate to float and maintains the substrate in a non-contact manner, so as to avoid the destroy of flatness and the generation of wrinkles caused by the contact state, and the exposure pattern can be exposed to the substrate in high precision. In addition, through the establishment of isothermal (constant temperature) mechanism, temperature variation (rise) in the floated substrate can be avoided, so that there will be no exposure problem caused by the substrate floating.

Description

201219989 六、發明說明： 【發明所屬之技術領域】 本發明有關於一種曝光裝置。例如有關於一種液晶顯示 用面板之製造裝置、尤其將遮罩上所描繪之圖案曝光於玻 璃基板上之液晶曝光裝置。 【先前技術】 用作顯示用面板之液晶顯示器裝置之TFT(Thin Film Transistor，薄膜電晶體）基板或彩色濾光片基板、電漿顯 示器面板用基板、有機EL (Electroluminescence，電致發 光）顯示面板用基板等之製造中’係利用曝光裝置並藉由 光微影技術於基板上形成圖案而進行。一般而言，曝光裝 置具備將基板真空吸附並保持之夾盤，且向保持於夾盤之 基板之表面照射透過光罩之光而進行曝光。 先前，於夾盤中有基板保持面平坦及於基板保持面設 置複數個銷形狀之凸部此兩者。後者由銷形狀之凸部以複 數個點支持基板，且藉由將銷形狀之凸部以外之部分與基 板之空間進行真空抽吸，藉此將基板真空吸附並保持。於 此種夾盤中’為了均等地真空吸附大型基板，將銷形狀之 凸部以外之部分與基板之空間分成複數個真空區間來進行 真空抽吸。因此’於基板保持面上設置有用於形成複數個 真空區間之堤部（線條）。 於如玻璃基板等般光透過之基板中，曝光時透過基板之 光由夾盤反射’並再次透過基板而到達基板之表面，藉此 會發生夾盤之表面形狀等被燒附於基板之表面之現象。此 157290.doc 201219989201219989 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to an exposure apparatus. For example, there is a liquid crystal exposure apparatus for manufacturing a panel for a liquid crystal display, in particular, for exposing a pattern drawn on a mask to a glass substrate. [Prior Art] A TFT (Thin Film Transistor) substrate, a color filter substrate, a plasma display panel substrate, and an organic EL (Electroluminescence) display panel used as a liquid crystal display device for a display panel In the manufacture of a substrate or the like, it is carried out by forming an pattern on a substrate by an optical exposure technique using an exposure apparatus. Generally, the exposure apparatus includes a chuck that vacuum-adsorbs and holds the substrate, and exposes the light transmitted through the mask to the surface of the substrate held on the chuck to perform exposure. Previously, in the chuck, both of the substrate holding surface were flat and a plurality of pin-shaped convex portions were provided on the substrate holding surface. The latter supports the substrate at a plurality of points by the convex portion of the pin shape, and vacuum suctions the portion other than the convex portion of the pin shape and the space of the substrate, thereby vacuum-adsorbing and holding the substrate. In such a chuck, in order to vacuum-adsorb a large substrate uniformly, the space other than the convex portion of the pin shape and the space of the substrate are divided into a plurality of vacuum sections to perform vacuum suction. Therefore, a bank portion (line) for forming a plurality of vacuum sections is provided on the substrate holding surface. In a substrate such as a glass substrate, light transmitted through the substrate during exposure is reflected by the chuck and passes through the substrate again to reach the surface of the substrate, whereby the surface shape of the chuck or the like is burned on the surface of the substrate. The phenomenon. This 157290.doc 201219989

現象被稱為「背面轉印」Q 於先前之基板保持面平坦之夾盤中，基板背面之污潰堆 積於夾盤，因該污潰而發生背面轉印。相對於此，於基板 保持面設置有銷形狀之凸部之夾盤中，較少發生污潰堆積 所導致之背面轉印。 然而，若真空區間之吸附力太強，仿照基板保持面之形 狀而發生「背面轉印」之類之現象，為此人們亦提出將吸 附力按兩階段進行切換之方案。具體而言為，最初用較強 之吸附力很快將基板保持於夾盤上，其次，為了避免「背 面轉印」而用較弱之吸附力保持基板以減小基板之變形而 進行曝光《此處，為了將吸附力按兩級進行切換，將設置 於真空區間上之吸附孔所連結之真空力切換成高真空與低 真空來實現。 基板向夾盤之搭載通常係經由設置於夾盤上之複數個 上頂銷而進行。上頂銷自夾盤之表面上升，自機器人等之 裝卸臂接受基板後再次下降，將基板放置於夾盤之表面。 對曝光裝置要求減低曝光不良，同時還要求產距時間之 縮短以提高大量生產性能。為了縮短產距時間，有效之方 法係提高上頂銷之下降、上升之速度，將基板很快地設置 於夾盤上’並於曝光後迅速地進行拆卸。 然而，若提高銷之下降速度將基板靠近於夾盤，則基板 與夾盤之間之空氣不會完全地逃散至外部，空氣殘留於基 板與夾盤之中央部使基板之中央部鼓起來，從而會發生平 坦度受損之類之問題。 157290.doc 201219989 而且，越提高該速度，則空氣被封閉而使中央部很大地 鼓起之類之問題越明顯化。因此，為了縮短曝光裝置之產 距時間，需要於將基板搭載於夾盤時，將被封閉於基板與 夾盤之間之空氣有效地排出。因此，提出如下夾盤構造： 於夾盤表面之非真空區間設置自夾盤之中央連結至左右、 上下兩端之槽，同時於此槽上設置自夾盤表面側（基板安 裝侧）貫穿至背面（背面）之空氣孔，由此使被基板與夾盤所 封閉之空氣，經由上述槽與空氣孔而迅速地（有效地）向夾 盤之侧面及背面排出。此處，空氣孔被指定為直徑為4毫 米以下以不會引起「背面轉印」。 如則述般，藉由夾盤表面之堤部設置真空區間與非真空 區間，並於非真空區間設置有槽及空氣孔以迅速地排出使 基板接近於夾盤時產生之兩者間之空氣。又，亦提出如下 曝光裝置.於真空區間設置銷狀之凸部與吸附孔，藉由將 吸氣孔之真空度切換成高真空與低真空，於將基板安裝於 夾盤時以較強之吸附力保持基板，並迅速地排出空氣以縮 短產距時間而高速化’然後，於曝光時藉由以較弱之吸附 力進行保持’使與堤部、凸部之接觸所導致之接觸變形減 小’藉此減少背面轉印、即減少不良發生。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2007-180125號公報 【發明内容】 [發明所欲解決之問題]The phenomenon is called "back transfer" Q. In the previous chuck in which the substrate holding surface is flat, the back surface of the substrate is deposited on the chuck, and the back surface transfer occurs due to the contamination. On the other hand, in the chuck in which the pin-shaped convex portion is provided on the substrate holding surface, back-side transfer due to fouling accumulation is less likely to occur. However, if the adsorption force in the vacuum section is too strong, a phenomenon such as "back transfer" occurs in the shape of the substrate holding surface, and a proposal has been made to switch the adhesion force in two stages. Specifically, the substrate is initially held on the chuck by a strong adsorption force, and secondly, in order to avoid "back transfer", the substrate is held with a weak adsorption force to reduce the deformation of the substrate. Here, in order to switch the adsorption force in two stages, the vacuum force connected to the adsorption holes provided in the vacuum section is switched to a high vacuum and a low vacuum. The mounting of the substrate to the chuck is usually carried out via a plurality of upper pins provided on the chuck. The upper pin is lifted from the surface of the chuck, and is received by the loading arm of the robot or the like, and then lowered again to place the substrate on the surface of the chuck. The exposure apparatus is required to reduce the exposure failure, and the production time is also required to be shortened to improve the mass production performance. In order to shorten the production time, an effective method is to increase the speed at which the upper pin is lowered and raised, and the substrate is quickly placed on the chuck ′ and quickly disassembled after exposure. However, if the lowering speed of the pin is made to bring the substrate closer to the chuck, the air between the substrate and the chuck does not completely escape to the outside, and the air remains in the central portion of the substrate and the chuck to bulge the central portion of the substrate. As a result, problems such as flatness damage occur. 157290.doc 201219989 Moreover, the more this speed is increased, the more the problem is that the air is closed and the central part is greatly bulged. Therefore, in order to shorten the production time of the exposure apparatus, it is necessary to efficiently discharge the air enclosed between the substrate and the chuck when the substrate is mounted on the chuck. Therefore, the following chuck structure is proposed: a groove is provided in the non-vacuum section of the chuck surface from the center of the chuck to the left and right, upper and lower ends, and the groove is provided on the surface side of the chuck (substrate mounting side) to the groove. The air holes on the back surface (back surface) allow the air enclosed by the substrate and the chuck to be quickly (effectively) discharged to the side and back surfaces of the chuck through the grooves and the air holes. Here, the air hole is specified to have a diameter of 4 mm or less so as not to cause "back transfer". As described above, the vacuum section and the non-vacuum section are provided by the bank of the chuck surface, and the groove and the air hole are provided in the non-vacuum section to quickly discharge the air generated when the substrate is brought close to the chuck. . Further, the following exposure apparatus is also proposed. In the vacuum section, a pin-shaped convex portion and an adsorption hole are provided, and by switching the vacuum degree of the suction hole to a high vacuum and a low vacuum, the substrate is strongly mounted when the substrate is mounted on the chuck. The adsorption force holds the substrate and rapidly discharges the air to shorten the production time and speeds up 'and then, by holding with a weak adsorption force during exposure, the contact deformation caused by contact with the bank and the convex portion is reduced. Small 'by this reduces back transfer, ie reduces the occurrence of defects. [Prior Art Document] [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-180125 SUMMARY OF INVENTION [Problems to be Solved by the Invention]

157290.doc 201219989 於文獻1之公知例中，於夾盤整面設置藉由堤部所劃分 之真空區間，為了防止「背面轉印」，需要於此真空區間 設置多個銷狀之凸部以使基板進行點（微小面積）接觸， 又，需要於非真空區間設置多個槽及小徑空氣孔，從而存 在夾盤表面之加工變得非常複雜而使生產性變差之課題。 又，雖可將真空區間之吸附力切換成高真空與低真空， 於曝光時減小吸附力使與基板之接觸部之變形減小，以確 保基板之平坦性，但只要利用堤部支持基板並使其吸附接 觸，便會發生接觸部之變形，故難以完全地確保基板之平 坦性❹因此，仍有可能仿照基板保持面之形狀而發生「背 面轉印」。 又，伴隨於基板之大型化，夾盤面亦大型化，因此，真 空區間之數量增加，故使構成真空區間之堤部之高度相同 於製作上較難，有可能會因堤部與基板之接觸狀態之差異 而產生氣密性之差異。具體而言，於因堤部高度不均一、 塵埃混入等使基板與堤部無法完全接觸而局部發生間隙之 真空區間，空氣自周圍流入真空區間，即便用同一真空力 (泵）吸出空氣’亦無法使全部真空區間之真空度相同。因 此，於各個真空區間之抽吸力上產生差異，由此有基板之 變形不同而使平坦度受損從而無法高精度地曝光遮罩圖案 之可能性。又，亦有可能仿照基板保持面之形狀而發生 「背面轉印」。 又，於較大之基板中，難以自基板中心朝向外側依次使 其接觸到夾盤，假使於最初自基板之外側接觸到夾盤，其 157290.doc 201219989 次内側進行接觸之情形時，即便用空氣孔、真空區間將夾 盤及基板上所殘留之空氣排除，因基板外侧與夾盤之接觸 摩擦而不會使基板之皺折伸展並變得平行。此根據如下現 象而可容易地理解’例如於敷設較大之毛絨毯時，若一旦 因某種理由於中央部出現鼓起，則因毛絨毯與地板之接觸 摩擦而不會使毛絨毯變得平坦。 即’於夾盤整面上設置凸部、包含堤部之真空區間，對 基板進行接觸支持（保持）之方法中，假使如圖15(丨）所示般 基板變大’則容易於基板之中央殘留空氣。就該點而言， 向基板之下降速度越快則越顯著。於因空氣等而使中央部 鼓起來之形狀下將基板設置於夾盤時，縱使藉由真空區間 以真空力200將兩者之空氣排出，亦會因基板之周邊部與 真空區間之接觸摩擦而使基板不能變得平坦，故如圖15(2) 所示般有可能於基板上殘留皺折2〇 1。 本發明之目的係為實現以下事項之中至少一個以上。此 外’以下事項有時分別獨立地實現，有時複數個同時實 現。 (1) 防止「背面轉印」。 (2) 縮短基板之夾盤搭載時間以縮短產距時間。 (3) 藉由將基板向夾盤平坦地進行保持則可正確地曝光遮 罩之曝光圖案（形狀）’即，能夠實現無應變（變形）之高精 度曝光。 (4)可提供夾盤製造簡單之曝光裝置。 [解決問題之技術手段] 157290.doc 201219989 本發明為了上述目的而具備 時分別獨立地具備以下特徵， 徵。 以下特徵。此外，本發明有 有時則同時具備複數個特 本發明之第1特徵在於，設詈刹 认+胁 ""置利用空氣膜（支承）使基板 於夾盤上洋起之浮起機構。且體 再具體而s為如下機構：於夾盤 之表面設置喷出壓縮空氣之喷出 ^ 貝25 藉由來自喷出孔之高 塾空氣使基板浮起於夾盤表面，以非接觸方式保持基板。 本發明之第2特徵在於設置將基板進行吸附保持之吸附 保持機構。於使基板浮起之情形時，由於基板與夾盤之間 沒有接觸阻力’基板於平面方向自由地進行移動，故要防 止該情況以使基板之位置(旋轉角度、姿勢)相對於夾盤保 持固定。 作為此吸附保持機構之一為（a )於上頂銷之前端設置有 吸附孔之帶吸附孔上頂銷，藉由該帶吸附孔上頂銷，使搬 入時基板相對於夾盤之位置（旋轉角度、姿勢）自曝光起保 持至被排出為止（因此，若於藉由機器人進行搬入前測定 出基板之位置（姿勢），而可將該資料用作夾盤之位置（姿 勢）控制資料）。 又’作為上述吸附保持機構之其他例為（b )於夾盤上設 置由吸附孔與堤部所形成之真空區間。而且，將該堤部之 馬度設定成與曝光時之基板浮起量大致相同之高度。而 且’該等吸附保持機構保持基板之夾盤對向面側（與遮罩 對向面相反一側）。藉此，可將遮罩接近於基板，可進行 所s胃之近接式（proximity)曝光。 157290.doc157290.doc 201219989 In the known example of Document 1, a vacuum section defined by a bank is provided on the entire surface of the chuck, and in order to prevent "back transfer", it is necessary to provide a plurality of pin-shaped projections in the vacuum section so that When the substrate is in contact with a point (small area), it is necessary to provide a plurality of grooves and small-diameter air holes in the non-vacuum section, and the processing of the surface of the chuck is complicated, and the productivity is deteriorated. Further, although the adsorption force in the vacuum section can be switched to a high vacuum and a low vacuum, the adsorption force is reduced during exposure to reduce the deformation of the contact portion with the substrate to ensure the flatness of the substrate, but the substrate is supported by the bank portion. When the contact is made by adsorption, deformation of the contact portion occurs, so that it is difficult to completely ensure the flatness of the substrate. Therefore, it is possible to cause "back transfer" in accordance with the shape of the substrate holding surface. Further, as the size of the substrate is increased, the chuck surface is also increased in size. Therefore, the number of vacuum sections is increased. Therefore, it is difficult to make the height of the bank portion constituting the vacuum section the same as that of the substrate. Differences in state result in differences in air tightness. Specifically, in a vacuum section where a gap between the substrate and the bank is not completely contacted due to uneven height of the bank, dust, and the like, the air flows into the vacuum section from the periphery, and the air is sucked out by the same vacuum force (pump). It is not possible to make the vacuum degree of all vacuum sections the same. Therefore, a difference occurs in the suction force in each vacuum section, whereby there is a possibility that the deformation of the substrate is different and the flatness is impaired, so that the mask pattern cannot be exposed with high precision. Further, there is a possibility that "back transfer" occurs in accordance with the shape of the substrate holding surface. Further, in a large substrate, it is difficult to sequentially contact the chuck from the center of the substrate toward the outside, and even if the first contact is made from the outer side of the substrate to the chuck, the 157290.doc 201219989 inner contact is used, even if The air hole and the vacuum section exclude the air remaining on the chuck and the substrate, and the wrinkles of the substrate are stretched and become parallel due to the contact friction between the outside of the substrate and the chuck. According to the following phenomenon, it can be easily understood that, for example, when a large plush blanket is laid, if the bulging occurs in the center portion for some reason, the plush blanket does not become a plush blanket due to the contact friction between the plush blanket and the floor. flat. In other words, in the method of providing a convex portion on the entire surface of the chuck and a vacuum section including the bank portion, the substrate is contact-supported (held), and if the substrate becomes large as shown in FIG. 15 (丨), it is easy to be in the center of the substrate. Residual air. In this regard, the faster the rate of descent to the substrate, the more significant. When the substrate is placed on the chuck in a shape in which the central portion is bulged by air or the like, even if the air is discharged by the vacuum force 200 by the vacuum section, the contact between the peripheral portion of the substrate and the vacuum section is also rubbed. However, since the substrate cannot be made flat, as shown in Fig. 15 (2), wrinkles 2 〇 1 may remain on the substrate. The object of the present invention is to achieve at least one of the following matters. In addition, the following items are sometimes implemented independently, and sometimes multiples are implemented simultaneously. (1) Prevent "back transfer". (2) Shorten the chuck mounting time of the substrate to shorten the production time. (3) By holding the substrate flat on the chuck, the exposure pattern (shape) of the mask can be accurately exposed. That is, high-precision exposure without strain (deformation) can be realized. (4) An exposure device with a simple chuck manufacturing can be provided. [Technical means for solving the problem] 157290.doc 201219989 When the present invention is provided for the above purpose, the following features are separately provided. The following features. Further, in the present invention, there is a case in which a plurality of the present inventions are provided in a plurality of features. The first feature of the present invention is to provide a floating mechanism for arranging a substrate on a chuck by using an air film (support). . Further, the body is specifically configured to provide a discharge of compressed air on the surface of the chuck. The substrate 25 is floated on the surface of the chuck by high-pitched air from the discharge hole, and is held in a non-contact manner. Substrate. A second feature of the present invention resides in an adsorption holding mechanism for holding and holding a substrate. In the case where the substrate is floated, since the substrate is freely moved in the planar direction due to no contact resistance between the substrate and the chuck, the situation is prevented so that the position (rotation angle, posture) of the substrate is maintained relative to the chuck. fixed. One of the adsorption holding mechanisms is (a) a pin on the adsorption hole provided with an adsorption hole at the front end of the upper pin, and the pin on the suction hole is used to position the substrate relative to the chuck when the carrier is loaded ( The rotation angle and the posture are held until the discharge is performed from the exposure (therefore, if the position (posture) of the substrate is measured before being carried in by the robot, the data can be used as the position (posture) control data of the chuck) . Further, as another example of the above-described adsorption holding means, (b) a vacuum section formed by the adsorption holes and the banks is provided on the chuck. Further, the height of the bank portion is set to be substantially the same as the amount of substrate floating during exposure. Further, the adsorption holding means holds the chuck facing side of the substrate (the side opposite to the facing surface of the mask). Thereby, the mask can be brought close to the substrate, and the proximity exposure of the stomach can be performed. 157290.doc

,· ·'· S -8 - 201219989 本發明之第3特徵係設置用於將基板之溫度保持固定浪 溫化)之恆溫化機構。作為恆溫機構，例如有於失盤上π 置惶溫裝置，可將基板與夾盤之間之空氣變成於基板之: 卻性能優異之氣體。 ν 又，本發明具有以下特徵作為其他特徵。 本發明之第4特徵在於具有搭載上述基板之第冰載部， 上逃第^搭載部包含使上述基板相對於上述^搭載部浮起 之第1基板浮起部。 本發明之第5特徵在於上述第丄基板浮起部包含向 板供給介質之供給部。 土 本發明之第6特徵在於上述供給部向上述基板供給第^介 質及壓力低於上述第i介質之^介質，且控制上述以介 質之供給量及上述第2介質之供給量。 本發明之第7特徵在於上述第！搭載部包含載置上述基板 之第1上下移動部。 …本發明之第8特徵在於上述第1上下移動機構包含吸附上 述基板之基板吸附部。 本發明之第9特徵在於上述^搭載部包含載置上述基板 之第2上下移動部，上述幻上下移動部及上述第2上下移 動部同步地移動。 、本發明之第10特徵在於上述第1搭载部包含較上述第"答 载部上之氣壓低之低氣壓區間。 本發明之第11特徵在於上述低氣塵區間包含包圍上述第 搭載上之-部分空間之堤部；及配置於上述堤部内之 ••少 157290.doc 201219989 排氣部。 壓區間位於上述第j搭 本發明之第12特徵在於上述低氣 載部之角部。 本發明之第13特徵在於上述^搭載部包含吸出上述基 板與上述苐〗搭載部之間之空氣之吸氣部。 本發明之第“特徵在於上述供給部包含喷出孔上述吸 氣部包含吸氣孔，上述喷出孔及上述吸氣孔交替地配置於 上述第1搭載部上。 、 本發明之第15特徵在於上述搭载部包含控制上述基板與 上述第1搭載部之間之溫度之溫度控制部。 ，發明之第16特徵在於包含敎上述基板之浮起量之浮 起量測定部，上料料基於上料起量敎部之測定結 果來控制上述浮起量。 本發明之第17特徵在於包含第2搭載部，上述第2搭载部 包含向上述第1搭載部搬送上述基板之搬送部；及使上述 基板相對於第2搭载部浮起之第2基板浮起部。 [發明之效果] 本發明發揮以下效果。此外，以下效果有時分別獨立 奏效，有時複數個效果同時奏效。 ⑴藉由設置使基板於夾盤面浮起之機構，基板與爽 地 盤 不會接觸可減少先前因基板與夾盤接觸而發生之「背面 轉印」之不良。 因月匕夠確保基板之平坦度故能夠實現無應變（變形）之高 曝光精度。 157290.doc 201219989 (2) 可縮短產距時間。 (3) 由於藉由設置浮起機構而可將基板浮起於夾盤上， 故可防止因附著於基板之塵埃、或者因真空區間之較強吸 附力而有可能仿照基板保持面之形狀產生之「背面轉 印」。 (4) 於先刚之方法中，若因基板與真空區間之接觸順序 等而於基板上產生皺折，則基板之皺折因兩者之接觸摩擦 而不會被釋放，但如本發明般藉由使基板空氣浮起，而可 消除接觸部，故能夠容易地確保基板之平坦性而不產生皺 折。 (5) 由於基板浮起於夾盤上，故不會有於先前之接觸方 式成為問題之基板與夾盤之間殘留空氣而因此使平坦度變 差之情況。 (6) 於先前之方式中，為了除去殘留於基板與夾盤之間 之空氣而設置有真空區間、空氣孔。然而，於本發明中藉 由使基板浮起，於兩者之間必定會出現空氣之通路（流 路），故不會有因空氣殘留而使基板之平坦度變差之情 況。 (7) 於本發明中，藉由一併設置基板之浮起機構及吸附 保持機構，即便使基板浮起於夾盤上，亦能夠與先前同樣 地將基板於夾盤上固定地進行定位（保持）。因此藉由用 精密载物台使夾盤移動至遮罩下而進行高精度定位，基板 亦月b夠相對於遮罩進行高精度定位。因此，於較基板小之 遮罩或者較遮罩大之基板之情形時，均可改變基板之位置 157290.doc 201219989 而對基板之整面進行曝光》 (8) 將遮罩接近於基板進行曝光，之後將遮罩自基板離 開’且改變位置進行曝光之方法一般被稱之為步進曝光。 此處，吸附保持機構宜於先前之上頂銷之前端部、或者 夾盤面上設置由真空孔及堤部所形成之真空區間。又，吸 附保持機構藉由保持基板之夾盤對向面，而基板之遮罩對 向面維持平坦《因此，可進行使遮罩接近於玻璃基板表面 至數百μιη進行曝光的近接式曝光，可將遮罩圖案高精度 地曝光於基板上。 (9) 於本發明中’由於將曝光時之熱膨脹所導致之基板 之伸展抑制得較小，故可進行不良較少、精度較高之曝 光。若進而具體地進行敍述，則為由於基板之溫度被曝光 時之光或被該光加熱之遮罩所加熱，故為了防止其熱膨脹 所導致之曝光誤差，於23±0.2〇c下進行管理。於先前之將 基板接觸支持於夾盤之方法中，即便基板被加熱，藉由與 夾盤之接觸傳導，基板藉由夾盤被恆溫化。然而，如本發 明般於浮起保持基板之情形時成為經由空氣層進行保持， 基板可能難以藉由夾盤被冷卻（恆溫化）。因此，藉由設置 基板之恆溫化機構，而可防止溫度上升所導致之曝光精度 之劣化’從而實現高速/高精度之曝光。 【實施方式】 下面，使用圖示之實施例對本發明實施形態詳細地進行 說明。 [實施例1] 157290.doc 12 201219989 使用圖1至圖7說明本發明之第一實施例。 圖1係表示本發明一實施形態之曝光裝置之概略構成之 圖。本實施形態表示於遮罩與基板之間設置微小之間隙 (接近間隙）並向基板轉印遮罩圖案之接近方式之曝光裝置 之例。曝光裝置包括基底3、X導件4、X載物台5、Y導件 6、Y載物台7、Θ載物台8、Z-傾斜機構9、夾盤10以及遮罩 支架20而構成《此外，曝光裝置除該等以外亦具備曝光用 光源；向夾盤10供給基板1之供給單元；自夾盤1〇回收基 板1之回收單元；進行裝置内之溫度管理之溫度控制單元 等》 於圖1中’夾盤10位於進行基板丨交接之交接位置。於交 接位置，基板1藉由未圖示之供給單元而被供給至夾盤 1〇’又’藉由未圖示之回收單元自夾盤10將基板1進行回 收。經由設置於夾盤10上之複數個上頂銷進行基板1向夾 盤10之搭載。上頂銷自夾盤10之表面上升，並自供給單元 之裝卸臂接受基板1後’再次下降使基板1放置於夾盤1〇之 基板保持面。於進行基板1曝光之曝光位置之上空藉由遮 罩支架20保持遮罩2。又，遮罩支架20由Z-傾斜機構9支 持。 夾盤10被搭載於Θ載物台8上，於Θ載物台8之下方設置有 Y載物台7及X載物台5。X載物台5沿著設置於基底3之X導 件4向X方向（圖面橫方向）移動。藉由X載物台$向X方向之 移動’夾盤10於交接位置及曝光位置之間移動。此外，使 用線性馬達等作為驅動機構，但圖示省略β γ載物台7沿著 157290.doc 13 201219989 設置於X載物台5之γ導件6向丫方向（圖面縱深方向）移動。 Θ載物台8使夾盤1〇向0方向（圖面縱方向繞軸）進行旋轉。 又Ζ彳員斜機構9使遮罩支架向ζ方向（圖面縱方向）移動及 傾斜。 於曝光位置，藉由X載物台5向X方向之移動、γ載物台7 向Υ方向之移動及Θ載物台8向θ方向之旋轉，來進行曝光時 之基板1之定位。又，藉由乙傾斜機構9向2方向之移動及 傾斜，進行遮罩2與基板1之間隙控制。 此外，設置於夾盤10下方之θ載物台8等全部機構亦可安 裝於遮罩支架2〇上。又，相反2_傾斜機構9亦可設置於夾 盤10之下方。 圖2表示夾盤之基板安裝面。於夹盤上設置有：帶吸氣 孔上頂銷11，其接受並吸附保持自基板搬送機器人（未圖 不）送來之基板，沿夾盤面之上下方向（圖面突出、縱深方 向）移動；上頂銷12，與帶吸附孔銷同樣地接受並保持自 基板搬送機器人（未圖示）送來之基板，沿夾盤面之上下方 向（圖面突出、縱深方向）移動；喷出高壓空氣之喷出孔 13，及由吸氣孔14及堤部15所形成之真空區間。 上頂銷12於夾盤之整面上設置有複數個，接受自機器人 搬送而來之基&，且所有上頂銷藉由使基板與上述帶吸附 孔上頂銷11同時上下移動，而使整個基板保持平行（平 坦）’使基板相對於夾盤表面上下移動。 喷出孔13係於基板表面之整面設置有複數個，藉由自此 處喷出之壓縮空氣，使基板相對於夹盤面，以非接觸方式 157290.docThe third feature of the present invention is a thermostat mechanism for providing a constant temperature of the substrate. As a constant temperature mechanism, for example, there is a π-stamping device on the disk, and the air between the substrate and the chuck can be turned into a substrate: a gas having excellent performance. ν Further, the present invention has the following features as other features. According to a fourth aspect of the present invention, there is provided a first ice carrying portion on which the substrate is mounted, and the upper loading portion includes a first substrate floating portion that floats the substrate with respect to the mounting portion. According to a fifth aspect of the invention, the second substrate floating portion includes a supply portion for supplying a medium to the plate. According to a sixth aspect of the invention, the supply unit supplies a medium having a medium and a pressure lower than the medium of the i-th medium, and controls a supply amount of the medium and a supply amount of the second medium. The seventh feature of the present invention resides in the above-mentioned! The mounting portion includes a first vertical moving portion on which the substrate is placed. According to an eighth aspect of the invention, the first vertical movement mechanism includes a substrate adsorption unit that adsorbs the substrate. According to a ninth aspect of the invention, the mounting portion includes a second vertical moving portion on which the substrate is placed, and the magic vertical moving portion and the second vertical moving portion move in synchronization. According to a tenth aspect of the present invention, the first mounting portion includes a low air pressure portion that is lower than a pressure on the first "answer portion; According to a eleventh aspect of the present invention, in the low dust region, the bank portion surrounding the first mounted portion is provided, and the ventilating portion disposed in the bank portion is 157290.doc 201219989. The ninth aspect of the present invention is characterized by the corner portion of the low air bearing portion. According to a thirteenth aspect of the invention, the mounting portion includes an air suction portion that sucks air between the base plate and the mounting portion. According to a first aspect of the invention, the supply unit includes a discharge hole, the intake unit includes an intake hole, and the discharge hole and the intake hole are alternately disposed on the first mounting portion. The mounting portion includes a temperature control unit that controls the temperature between the substrate and the first mounting portion. The sixteenth aspect of the invention includes a floating amount measuring unit that includes a floating amount of the substrate, and the upper material is based on According to a seventh aspect of the invention, the second mounting portion includes a second mounting portion, and the second mounting portion includes a transport portion that transports the substrate to the first mounting portion; [Effects of the Invention] The present invention exerts the following effects. The following effects may be effective independently of each other, and a plurality of effects may be effective at the same time. (1) By setting The mechanism for floating the substrate on the surface of the chuck, the substrate and the ground plate are not in contact with each other, and the defect of "back transfer" which has occurred in the previous contact between the substrate and the chuck can be reduced. Since the moon is sufficient to ensure the flatness of the substrate, high exposure accuracy without strain (deformation) can be achieved. 157290.doc 201219989 (2) Can shorten the production time. (3) Since the substrate can be floated on the chuck by providing the floating mechanism, it is possible to prevent the dust adhering to the substrate or the strong adsorption force in the vacuum section from being likely to follow the shape of the substrate holding surface. "Back transfer". (4) In the method of the first method, if wrinkles are formed on the substrate due to the contact order of the substrate and the vacuum section, the wrinkles of the substrate are not released due to the contact friction between the two, but as in the present invention Since the contact portion can be eliminated by floating the substrate air, the flatness of the substrate can be easily ensured without wrinkles. (5) Since the substrate floats on the chuck, there is no possibility that air remains between the substrate and the chuck in which the previous contact method is a problem, and thus the flatness is deteriorated. (6) In the prior art, a vacuum section and an air hole are provided in order to remove air remaining between the substrate and the chuck. However, in the present invention, since the substrate is floated, an air passage (flow path) is surely formed between the two, so that the flatness of the substrate is not deteriorated due to the residual air. (7) In the present invention, by providing the floating mechanism and the adsorption holding mechanism of the substrate together, even if the substrate is floated on the chuck, the substrate can be fixedly positioned on the chuck in the same manner as before ( maintain). Therefore, by using a precision stage to move the chuck under the mask for high-precision positioning, the substrate can be positioned with high precision relative to the mask. Therefore, when the mask is smaller than the substrate or the substrate is larger than the mask, the position of the substrate can be changed 157290.doc 201219989 and the entire surface of the substrate is exposed. (8) Exposing the mask close to the substrate The method of leaving the mask away from the substrate and then changing the position for exposure is generally referred to as step exposure. Here, the adsorption holding mechanism is preferably provided with a vacuum section formed by the vacuum hole and the bank at the end before the top pin or the face of the chuck. Moreover, the adsorption holding mechanism maintains the facing surface of the substrate by holding the chuck facing surface of the substrate, so that the proximity exposure of the mask to the surface of the glass substrate to a few hundred μm can be performed. The mask pattern can be exposed to the substrate with high precision. (9) In the present invention, since the stretching of the substrate due to thermal expansion during exposure is suppressed to a small extent, exposure with less defects and high precision can be performed. More specifically, when the temperature of the substrate is heated by the exposure or the mask heated by the light, the exposure error is prevented at 23 ± 0.2 〇 c in order to prevent the exposure error caused by the thermal expansion. In the prior method of contacting the substrate to the chuck, even if the substrate is heated, the substrate is kept constant by the chuck by conduction with the chuck. However, as in the case of the present invention, when the substrate is held up by floating, it is held by the air layer, and the substrate may be difficult to be cooled (constant temperature) by the chuck. Therefore, by providing the thermostat mechanism of the substrate, deterioration of exposure accuracy due to temperature rise can be prevented, thereby achieving high-speed/high-precision exposure. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail using the embodiments shown in the drawings. [Embodiment 1] 157290.doc 12 201219989 A first embodiment of the present invention will be described using Figs. Fig. 1 is a view showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention. This embodiment shows an example of an exposure apparatus in which a small gap (close to a gap) is provided between a mask and a substrate, and a mask pattern is transferred to the substrate. The exposure apparatus includes a substrate 3, an X guide 4, an X stage 5, a Y guide 6, a Y stage 7, a cassette stage 8, a Z-tilt mechanism 9, a chuck 10, and a mask holder 20. In addition, the exposure apparatus includes a light source for exposure, a supply unit for supplying the substrate 1 to the chuck 10, a recovery unit for recovering the substrate 1 from the chuck 1 , a temperature control unit for performing temperature management in the apparatus, and the like. In Fig. 1, the chuck 10 is located at the transfer position where the substrate is transferred. At the transfer position, the substrate 1 is supplied to the chuck 1' by a supply unit (not shown), and the substrate 1 is recovered from the chuck 10 by a recovery unit (not shown). The substrate 1 is mounted on the chuck 10 via a plurality of upper pins provided on the chuck 10. The upper top pin rises from the surface of the chuck 10, and receives the substrate 1 from the loading arm of the supply unit, and then falls again to place the substrate 1 on the substrate holding surface of the chuck 1〇. The mask 2 is held by the mask holder 20 over the exposure position at which the substrate 1 is exposed. Further, the mask holder 20 is supported by the Z-tilt mechanism 9. The chuck 10 is mounted on the cassette stage 8, and a Y stage 7 and an X stage 5 are provided below the cassette stage 8. The X stage 5 moves in the X direction (horizontal direction of the drawing) along the X guide 4 provided on the base 3. The chuck 10 is moved between the transfer position and the exposure position by the movement of the X stage $ in the X direction. Further, a linear motor or the like is used as the drive mechanism, but the β γ stage 7 is omitted as shown in Fig. 157290.doc 13 201219989, and the γ-guide 6 provided on the X stage 5 is moved in the 丫 direction (the depth direction of the drawing). The cymbal stage 8 rotates the chuck 1 0 in the 0 direction (the axis in the longitudinal direction of the drawing). Further, the slanting mechanism 9 moves and tilts the mask holder in the ζ direction (vertical direction of the drawing). At the exposure position, the positioning of the substrate 1 during exposure is performed by the movement of the X stage 5 in the X direction, the movement of the γ stage 7 in the Υ direction, and the rotation of the Θ stage 8 in the θ direction. Further, the gap between the mask 2 and the substrate 1 is controlled by the movement and tilting of the B tilt mechanism 9 in two directions. Further, all the mechanisms such as the θ stage 8 provided under the chuck 10 can be mounted on the mask holder 2''. Further, the opposite 2_ tilting mechanism 9 may be disposed below the chuck 10. Figure 2 shows the substrate mounting surface of the chuck. The chuck is provided with a top pin 11 with an air suction hole, which receives and sucks and holds the substrate fed from the substrate transfer robot (not shown), and moves along the upper and lower sides of the chuck surface (the surface is protruded and the depth direction) The upper top pin 12 receives and holds the substrate fed from the substrate transfer robot (not shown) in the same manner as the suction pin, and moves in the up-down direction (the surface is protruded and the depth direction) of the chuck surface; the high-pressure air is ejected. The discharge hole 13 and the vacuum section formed by the suction hole 14 and the bank portion 15. The upper top pin 12 is provided on the entire surface of the chuck, and receives a plurality of bases from the robot, and all of the upper pins are moved up and down by simultaneously moving the substrate and the top pin 11 with the adsorption holes. Keeping the entire substrate parallel (flat) 'move the substrate up and down relative to the chuck surface. The ejection holes 13 are provided on the entire surface of the substrate surface in a plurality of places, and the compressed air ejected therefrom is used to make the substrate in a non-contact manner with respect to the chuck surface. 157290.doc

S -14- 201219989 浮起均一之高度。 於本貫施例中，真空區間係於帶吸附孔上頂銷兩側之夾 盤角部設置有兩個。真空區間16由吸氣孔14及將其包圍之 土疋部1 5所形成，真空區間丨6之中被保持為真空。該兩個真 空區間之堤部15之高度、形狀及吸氣孔14之直徑相同。該 等真空區間於使基板浮起時，與帶吸附孔上頂銷一起被用 於將基板於夾盤10上進行保持、定位。又，於基板變大、 遮罩（未圖示）一邊改變基板上之位置一邊藉由多次曝光而 對基板全體進行曝光之情形時，亦具有如下功能：防止於 遮罩接近於基板時，因遮罩與基板之間產生之正壓力（壓 力上升所造成之推壓力）而使基板接近（接觸）夾盤表面；另 外防止於遮罩自基板離開時，因兩者之間產生之負壓力 (壓力下降所造成之吸附力）而使基板自夾盤表面分離。 圖3表示圖2之A-A剖面。帶吸氣孔上頂銷u由如下機構 所構成·包含於圓筒狀之外周部及其一端具有吸附孔Η之 底部之吸附墊部50 ;接合於吸附塾部5〇之缸體部52 ;接合 於紅體部52之管接頭54 ;及上下驅動馬達56。於缸體部52 設置有接合於吸附孔5 1之空氣流路53，並經由管接頭54連 接於真空配管55。於該真空配管之端部連結著真空泵等真 空源，但未圖示。 该帶吸氣孔上頂銷11被設置於貫通夾盤之表面與背面 之V吸氣孔上頂銷用孔58之中’藉由上述上下驅動馬達 56 ’使帶吸氣孔上頂銷11於相對於夾盤丨〇之面為垂直方向 之帶吸氣孔上頂銷移動方向57進行移動。吸附墊部5〇於下 157290.doc 201219989 降時進入帶吸氣孔上頂銷用孔58之中，並可移動至低於夾 盤表面之位置（靠近背面之位置）。 該帶吸氣孔上頂銷11之動作係對自基板搬送機器人（未 圖示）所搬送而來之基板，與通常之（不帶吸附孔）上頂銷12 一併搬運基板1，且除該功能外，帶吸附孔上頂銷具有使 基板1之位置、姿勢保持固定之功能。具體而言，藉由吸 附孔51且由吸附墊部50真空吸附基板！，因而較之如上頂 銷12般僅藉由利用基板1自重之接觸摩擦力來保持基板1， 而可更強有力地保持基板1之位置、姿勢。此外，關於各 個上頂銷之動作及功能，藉由圖7之第一實施例之基板搬 送、保持機構之說明圖詳細地進行說明。 又’於夹盤10上設置有複數個喷出孔13，於噴出孔13之 另一端設置有管接頭30，並經由其接連到配管31，該配管 31連結於高壓縮空氣及低壓縮空氣之供給源，高壓縮空氣 與低壓縮空氣之切換藉由電磁閥32、33進行。即，於需要 低壓縮空氣時，低壓縮空氣用電磁閥33打開而高壓縮空氣 用電磁閥32關閉。反之，於需要高壓縮空氣之情形時，高 壓縮空氣用電磁閥32打開而低壓縮空氣用電磁閥33關閉。 於欲使基板自夾盤10之表面較高地浮起之情形時使用高 壓縮空氣，於欲使其較低地浮起之情形時則使低壓縮空氣 自喷出孔13喷射’以調整基板1之浮起量。 又，於夾盤1〇上設置有真空區間16，其包含堤部Η及吸 氣孔14»於吸氣孔14之另一端設置有管接頭4〇，經由其接 合於真空源（例如真空泵）上所連結之配管41。該真空區間 157290.doc 16 · 201219989 16與帶吸氣孔上頂銷U 一併保持由帶吸氣孔上頂仙所保 持之基板之位置、浮起量。X，此處，藉由預先將堤部Μ 之高度設定（製作）成對基板進行曝光時之浮起高度，而不 會因遮罩接近或者離開基板時產生之壓力，使基板按下而 接近夾盤表面或者拉伸而離開夾盤表面，使距離夾盤1〇之 浮起高度保持固定。藉此，可將遮罩與基板之間隔保持固 定，可進行穩定之狹窄間隙曝光。又，因基板不會接觸於 夾盤10表面，故堆積於夾盤表面之塵埃不會附著（接觸）於 基板等’不易引起背面轉印。 圖4中表不圖2之B-B剖面。此圖表示圖2之喷出孔13之剖 面》此處’喷出孔U為同一形狀，故成為與圖3之a_a剖: 之喷出孔13相同之構成。因此，有所重複，於喷出孔以 另一端設置有管接頭30,並經由其連接於配管31，該配管 連結於高壓縮空氣與低壓縮空氣之供給源，高壓縮空氣與 低壓縮线之切換藉由電磁閥32、33進行。使用該等電磁 閥，於欲使基板從夾盤1〇之表面較高地浮起之情形時使用 南壓縮空氣’而於欲使其較低地浮起之情料則使低壓縮 空氣自喷出孔13喷射，以調整浮起量。 圖5中表示圖2之C-C剖面。於上頂銷12之另一端安裝有 使上頂銷12相料夾盤1G之表面沿上頂銷移動方向叫垂 直上下方向）驅動之馬達60。而且，該上頂銷12被收納 於认置於爽盤10之貫通孔59之中。雖然於本實施例中’於 該等上頂銷12之各者設置馬達6()，但亦可採用將上頂銷^ 之馬達60側之端部連結，由一個馬達使上頂銷一併（同時） 157290.doc •17· 201219989 上下移動之機構。若如本實施例般採用於-個上頂銷12上 設置-個馬達6G之構造，則即便於—個馬達因某種理由發 生故障而無法H料’亦可由剩餘之馬達使上頂銷 12上下移動’因此能夠使裝置之可靠性提高。另一方面， 由-個馬達使全部上頂銷上下移動之方法，因可減少馬達 60之使用個數故自價格方面考慮較佳。 上頂銷12之前端被設定成距離夾盤1〇面之高度相同，能 夠使基板保持平坦，並相對於夾盤1〇面平行地使其上下移 動。又，該等上頂銷12可與帶吸氣孔上頂銷i j同步地以相 同高度及速度上下移動。於圖7中說明該等之動作。 圖6中表示圖2之D-D剖面。與圖3不同之處在於無帶吸 氣孔上頂銷11及真空區間16之位置不同這兩點。真空區間 16、喷出孔13之構成及功能如前所述。因此，此處省略說 明。 使用圖7說明基板1自搬送機器人之臂7〇經由帶吸氣孔上 頂銷11、上頂銷12傳遞到夾盤1〇，並於夾盤上安裝基板 1為止之基板1之動作、上頂銷11、；!2，喷出孔13，真空區 間16各自之動作（功能）。 圖7(1)表示於搭載於基板搬送機器人之臂7〇上之基板i 被插入至夾盤10之上部之狀態。於臂7〇已被插入時，帶吸 氣孔上頂銷11、上頂銷12於基板1之下方以非接觸之狀態 進行待機。又’設置於夾盤10之真空區間16與基板1為非 接觸，其間隔為間隙G90。 若基板1被插入則如圖7(2)所示般，帶吸氣孔上頂銷 • 18· 157290.docS -14- 201219989 The height of the float is uniform. In the present embodiment, the vacuum section is provided at two corners of the chuck on both sides of the pin on the suction hole. The vacuum section 16 is formed by the suction hole 14 and the soil portion 15 surrounded by it, and is held in a vacuum in the vacuum section 丨6. The height and shape of the banks 15 of the two vacuum sections and the diameter of the suction holes 14 are the same. The vacuum section is used to hold and position the substrate on the chuck 10 together with the top pin on the suction hole when the substrate is floated. Further, when the substrate is enlarged and the mask (not shown) is changed while the position on the substrate is changed, the entire substrate is exposed by multiple exposures, and also has a function of preventing the mask from being close to the substrate. The substrate is brought close to (contacts) the surface of the chuck due to the positive pressure generated between the mask and the substrate (the pressing force caused by the pressure rise); and the negative pressure generated between the two is prevented when the mask is separated from the substrate. The adsorption force caused by the pressure drop causes the substrate to separate from the surface of the chuck. Figure 3 is a cross-sectional view taken along line A-A of Figure 2; The top pin u with the suction hole is composed of the following mechanism: the adsorption pad portion 50 including the outer periphery of the cylindrical shape and the bottom of the adsorption hole at one end thereof; and the cylinder portion 52 joined to the adsorption jaw portion 5; The pipe joint 54 joined to the red body portion 52; and the motor 56 is driven up and down. The cylinder portion 52 is provided with an air flow path 53 that is joined to the adsorption hole 51, and is connected to the vacuum pipe 55 via a pipe joint 54. A vacuum source such as a vacuum pump is connected to the end of the vacuum piping, but is not shown. The top pin 11 with a suction hole is provided in the top pin hole 58 of the V suction hole penetrating through the surface of the chuck and the back surface. 'With the upper and lower drive motor 56', the top pin 11 with the suction hole is provided. The top pin moving direction 57 is moved in the air suction hole with respect to the surface of the chuck 垂直 in the vertical direction. The suction pad portion 5 enters the top pin hole 58 with the suction hole at the time of lowering, and can be moved to a position lower than the surface of the chuck (close to the back side). The operation of the top pin 11 with the suction hole is performed on the substrate conveyed from the substrate transfer robot (not shown), and the substrate 1 is transported together with the normal (without adsorption holes) top pin 12, and In addition to this function, the top pin with the suction hole has a function of keeping the position and posture of the substrate 1 fixed. Specifically, the substrate is vacuum-adsorbed by the adsorption pad portion 50 by the adsorption hole 51! Therefore, the substrate 1 can be held by the contact frictional force of the substrate 1 by the contact force of the substrate 1, and the position and posture of the substrate 1 can be more strongly maintained. Further, the operation and function of each of the top pins will be described in detail with reference to the substrate transfer and holding mechanism of the first embodiment of Fig. 7. Further, a plurality of discharge holes 13 are provided in the chuck 10, and a pipe joint 30 is provided at the other end of the discharge hole 13, and is connected to the pipe 31 via the pipe 31, which is connected to the high compressed air and the low compressed air. The supply source, the switching of the high compressed air and the low compressed air is performed by the solenoid valves 32, 33. That is, when low compressed air is required, the low compressed air solenoid valve 33 is opened and the high compressed air is closed by the solenoid valve 32. Conversely, in the case where high compressed air is required, the high compressed air is opened by the solenoid valve 32 and the low compressed air is closed by the solenoid valve 33. High-compressed air is used in order to make the substrate float higher from the surface of the chuck 10, and low-compressed air is ejected from the ejection hole 13 when the lower surface is to be floated to adjust the substrate 1 The amount of floating. Further, a vacuum section 16 is provided on the chuck 1 , and includes a bank Η and an air intake hole 14». The other end of the air suction hole 14 is provided with a pipe joint 4 〇 through which a vacuum source (for example, a vacuum pump) is attached. The pipe 41 connected to the above. This vacuum section 157290.doc 16 · 201219989 16 maintains the position and the amount of floating of the substrate held by the top hole with the suction hole together with the top pin U with the suction hole. X, here, by setting (manufacturing) the height of the bank portion 预先 in advance to the floating height at the time of exposure of the substrate, the substrate is pressed and approached without the pressure generated when the mask approaches or leaves the substrate. The surface of the chuck is either stretched away from the surface of the chuck to maintain a constant lift height from the chuck 1〇. Thereby, the interval between the mask and the substrate can be kept constant, and stable narrow gap exposure can be performed. Further, since the substrate does not come into contact with the surface of the chuck 10, the dust deposited on the surface of the chuck does not adhere (contact) to the substrate or the like, and the back surface transfer is less likely to occur. Figure 4 shows the B-B section of Figure 2. This figure shows a cross section of the discharge hole 13 of Fig. 2. Here, the discharge hole U has the same shape, and thus has the same configuration as the discharge hole 13 of the a_a cross section of Fig. 3 . Therefore, there is a repetition in that the nozzle hole 30 is provided at the other end of the discharge hole, and is connected to the pipe 31 via the pipe, which is connected to a supply source of high compressed air and low compressed air, high compressed air and low compression line. Switching is performed by solenoid valves 32, 33. The use of the solenoid valves allows the low-compressed air to be ejected when the substrate is to be floated higher from the surface of the chuck 1 and the south compressed air is used to float lower. The hole 13 is sprayed to adjust the amount of floating. Fig. 5 shows a cross section taken along line C-C of Fig. 2. At the other end of the upper top pin 12, a motor 60 for driving the surface of the upper pin 12 of the material chuck 1G in the vertical direction of the upper pin is mounted is mounted. Further, the upper top pin 12 is housed in the through hole 59 that is placed in the swash plate 10. Although the motor 6 () is provided in each of the upper pins 12 in the present embodiment, the end portion of the motor 60 on the side of the upper pin can be connected, and the upper pin is combined by a motor. (At the same time) 157290.doc •17· 201219989 The mechanism of moving up and down. If the structure of the one motor 6G is provided on one of the upper pins 12 as in the present embodiment, even if the motor fails for some reason, the upper pin 12 can be made by the remaining motor. Moving up and down 'can therefore improve the reliability of the device. On the other hand, the method of moving all of the upper pins up and down by one motor is preferable in terms of price because the number of uses of the motor 60 can be reduced. The front end of the upper top pin 12 is set to be the same height as the face of the chuck 1 so that the substrate can be kept flat and moved up and down in parallel with respect to the face of the chuck 1. Further, the upper top pins 12 are movable up and down at the same height and speed in synchronization with the top pins i j on the suction holes. The actions of these are illustrated in FIG. Fig. 6 shows a cross section taken along line D-D of Fig. 2. The difference from Fig. 3 is that the positions of the top pin 11 and the vacuum section 16 on the unbelted suction hole are different. The configuration and function of the vacuum section 16 and the ejection orifice 13 are as described above. Therefore, the description is omitted here. The operation of the substrate 1 from the arm 7 of the transfer robot to the chuck 1 via the suction pin upper pin 11 and the upper top pin 12 and the mounting of the substrate 1 on the chuck will be described with reference to FIG. The top pins 11, 2, the discharge holes 13, and the respective operations (functions) of the vacuum section 16. Fig. 7 (1) shows a state in which the substrate i mounted on the arm 7 of the substrate transfer robot is inserted into the upper portion of the chuck 10. When the arm 7 is inserted, the upper pin 11 and the upper pin 12 with the suction holes stand in a non-contact state below the substrate 1. Further, the vacuum section 16 provided in the chuck 10 is in non-contact with the substrate 1, and the interval is a gap G90. If the substrate 1 is inserted, as shown in Figure 7 (2), with the top pin on the suction hole • 18· 157290.doc

S 201219989 1 1、上頂銷12上升以接觸支持基板1。尤其帶吸氣孔上頂 銷11藉由設置於其前端之吸附盤部50來吸附保持基板！， 保持基板1以使其不會移動。於基板1之整面上配置複數個 上頂銷12以支承基板1。當該等上頂銷η、12保持（支持）基 板1時，臂70向下（接近於夾盤1〇表面之方向）降落並退避到 夹盤10之外β 其次’如圊7(3)所示般，已接受基板1之帶吸氣孔上頂 銷11及上頂銷12 —邊保持基板1、即一邊保持自臂7〇接受 時之基板1之位置、姿勢，一邊藉由自喷出孔13(未圖示）喷 出之高壓縮空氣80所導致之高浮起力使基板1接近直至基 板被保持之高度Η1。此處，Η1係為基板1與夾盤1〇之表面 之間之間隔（距離）。該狀態下，由於來自喷出孔13之高壓 縮空氣80幾乎全部支承基板1之重量，故基板1與上頂銷12 之接觸力變小，基板1處於易於移動之狀況，但因基板i被 帶吸氣孔上頂銷11所吸附保持，故基板1不會相對於夾盤 表面平行地移動。又，雖然基板丨與負壓區間之間隙G9〇與 圖7(1)相比變小，但於此時刻下，基板丨與真空區間尚未接 觸。 其次’如圖7(4)所示般，上頂銷12自基板j離開而被收 納於夾盤10之中。即便上頂銷12自基板丨離開，由於高壓 縮空氣80以高度m支持基板丨，故此時之浮起高度H1、間 隙G之大小與圖7(3)相同。 此處，由於基板丨藉由空氣而浮起’故並無與夾盤之接 觸阻力’沿相對於爽盤1G表面平行方向自由地伸縮，因基 i 157290.doc •19- 201219989 板1之皺折、變形消除故能夠實現較高之平坦度。若詳細 地進行說明，則自臂70交接基板時，即便於因複數個上頂 銷12所導致之與基板1之接觸狀態之不同而於基板1上發生 了皺折、變形之情形時’藉由使基板丨進行空氣浮起而使 接觸（接觸力）消除，據此所產生之皺折、變形消除（被釋 放）從而月b夠實現基板1之高平坦度。又，由於利用帶吸 氣孔上頂銷11保持基板1，故基板1不會沿與夾盤1 〇之表面 平行方向自由地移動，用臂70所搬送而來之基板！之位置 (旋轉角）得以保持。 其次，如圖7(5)所示，帶吸氣孔上頂銷1]L降落至曝光時 之特定高度，基板1藉由來自喷出孔13之壓縮空氣81而保 持。又，基板1之端部與真空區間16接觸，藉由來自真空 區間16所設置之吸氣孔14(未圖示）之真空力，而由真空區 間16所保持。因此，此處間隙g變為零（消除）。因於圖7(4) 之階段已確保基板1之平坦度後，由真空區間16進行保 持’故係於已確保平坦度之狀態下保持基板1之兩端。 又’基板1於夾盤10上以H2之浮起高度得以保持，該高 度H2與真空區間16之堤部之高度15相同。如圖7(5)所示 般’基板1藉由帶吸氣孔上頂銷11及兩個真空區間丨6，以 H2之浮起量被平坦地保持於夾盤1 〇上。 即，由於基板1於夾盤10之表面上為非接觸，故可防止 於先前之裝置中成為課題之、因附著（接觸）於夾盤表面之 塵埃所產生之、及若加大吸附力則仿照基板保持面之形狀 而產生之「背面轉印」。又，藉由使基板i進行空氣浮 157290.doc -20-S 201219989 1 1. The upper top pin 12 is raised to contact the support substrate 1. In particular, the top pin 11 with the suction hole is sucked and held by the suction disk portion 50 provided at the front end thereof! , Keep the substrate 1 so that it does not move. A plurality of upper pins 12 are disposed on the entire surface of the substrate 1 to support the substrate 1. When the upper pins η, 12 hold (support) the substrate 1, the arm 70 descends downward (close to the surface of the chuck 1) and retreats to the outside of the chuck 10, followed by ''7' (3) As shown in the figure, the top pin 11 and the upper pin 12 of the suction hole of the substrate 1 are received while holding the substrate 1, that is, while maintaining the position and posture of the substrate 1 when the arm 7 is received, by self-spraying The high floating force caused by the high compressed air 80 ejected from the exit hole 13 (not shown) causes the substrate 1 to approach the height Η1 until the substrate is held. Here, Η1 is the interval (distance) between the substrate 1 and the surface of the chuck 1〇. In this state, since the high compressed air 80 from the discharge hole 13 almost supports the weight of the substrate 1, the contact force between the substrate 1 and the upper top pin 12 becomes small, and the substrate 1 is easily moved, but the substrate i is The top pin 11 is sucked and held by the suction hole, so that the substrate 1 does not move in parallel with respect to the surface of the chuck. Further, although the gap G9 of the substrate 丨 and the negative pressure section is smaller than that of Fig. 7 (1), the substrate 丨 and the vacuum section are not yet in contact at this time. Next, as shown in Fig. 7 (4), the upper top pin 12 is separated from the substrate j and received in the chuck 10. Even if the upper pin 12 is separated from the substrate ,, since the high pressure air 80 supports the substrate 以 at a height m, the floating height H1 and the gap G at this time are the same as those in Fig. 7(3). Here, since the substrate 浮 floats by the air, there is no contact resistance with the chuck, and it is freely stretched and contracted in a direction parallel to the surface of the slab 1G, because the wrinkle of the plate 1 is 157290.doc •19-201219989 Folding and deformation elimination can achieve higher flatness. In the case where the substrate is transferred from the arm 70, even if wrinkles or deformations occur on the substrate 1 due to the difference in the contact state with the substrate 1 due to the plurality of upper pins 12, The contact (contact force) is eliminated by causing the substrate 空气 to float, and the wrinkles and deformations generated thereby are eliminated (released), so that the high flatness of the substrate 1 can be achieved. Further, since the substrate 1 is held by the top pin 11 with the suction hole, the substrate 1 does not move freely in the direction parallel to the surface of the chuck 1 and the substrate is transported by the arm 70! The position (rotation angle) is maintained. Next, as shown in Fig. 7 (5), the top pin 1] L with the suction hole is dropped to a specific height at the time of exposure, and the substrate 1 is held by the compressed air 81 from the discharge hole 13. Further, the end portion of the substrate 1 is in contact with the vacuum section 16, and is held by the vacuum section 16 by the vacuum force from the suction hole 14 (not shown) provided in the vacuum section 16. Therefore, the gap g becomes zero (eliminated) here. Since the flatness of the substrate 1 is ensured at the stage of Fig. 7 (4), it is held by the vacuum section 16 so that both ends of the substrate 1 are held while ensuring flatness. Further, the substrate 1 is held on the chuck 10 at a height H2 which is the same as the height 15 of the bank portion of the vacuum section 16. As shown in Fig. 7 (5), the substrate 1 is held flat on the chuck 1 by the amount of floating H2 by the top pin 11 with the suction holes and the two vacuum sections 丨6. That is, since the substrate 1 is non-contact on the surface of the chuck 10, it is possible to prevent the dust generated by the adhesion (contact) on the surface of the chuck and the adsorption force if it is a problem in the prior apparatus. The "back transfer" is produced in accordance with the shape of the substrate holding surface. Also, by causing the substrate i to float air 157290.doc -20-

S 201219989 起，可消除先前之接觸支持之方法中，因基板與夾盤之接 觸順序'狀態、另外亦有可能因殘留於基板與接觸面之間 之空氣所產生之皺折、變形，進而，即使於因某種理由而 產生了皺折之情形時，藉由自夾盤10使其浮起而使皺折、 變形得以消除（釋放），從而確保基板1之平坦度。藉此，可 進行高精度（接近於遮罩之圖案形狀）之曝光。 進而，若詳細地進行說明，則於設置多個凸部、包含吸 氣孔及堤部之真空區間之方法中，因堤部高度之不均一性 而使每個真空區間上其真空度不同，其結果，堤部與基板 之接觸強度（狀態）發生變化，而有可能產生仿照基板保持 面之形狀之「背面轉印」。又，於將基板i高速地設置於 夾盤10時，因空氣未完全地排出而殘留等之某種理由於 基板之中央鼓起（變南）之狀態下自基板丨之周邊部起先接觸 到真空區間16之情形時，即便殘留之空氣藉由真空區間、 空氣孔進行排氣’亦會因基板1之周邊部與夾盤1〇之接觸 摩擦而使基板1於夾盤1 〇表面進行滑動，從而有可能未能 釋放皺折（變形）而喪失基板之平坦性。 然而，於使基板浮起之本方式中，由於基板與夾盤之間 為非接觸’故接觸所導致之（仿照基板保持面之形狀）「背 面轉印」不會發生。又，即便於自機器人臂由上頂銷進行 支持等時，因某種理由於基板上發生了變形（皺折）等，由 於基板1於夾盤10之上一次被浮起保持（圖，故此時變 形（皺折）得以釋放（消除）而實現高平坦度。 又’由於使基板進行空氣浮起，故即便將基板高速地下 157290.doc -21 - 201219989 降至夾盤上’因具有空氣流出之流路故不會於基板之中央 部殘留鼓起。 又，不需要設置於先前技術中為必需之支承基板之多個 微小凸部、及用於排出將基板放置於夾盤時產生之空氣之 空氣孔，可容易進行製作。 進而’由於基板1之一個端面由帶吸氣孔上頂銷丨丨進行 保持，且兩個端面由真空區間16予以保持，故即便於因遮 罩接近於基板時於兩者之間所產生之壓縮（高壓）空氣而使 基板被推壓到夾盤上時，又，即便於因遮罩自基板離開時 所產生之真空壓力而使基板彷彿要自夾盤剥離開之情形 時，基板1之位置亦不會自夾盤1〇偏移。 進而，由於帶吸氣孔上頂銷丨丨距離夾盤1〇面之高度與真 空區間16之堤部高度設定成與此時之浮起量112相同之高 度’故能夠實現均一之浮起量。 作為基板1之保持機構，於藉由機械、電氣或者吸附力 等來把持基板之兩面之方法中，於將遮罩2靠近基板〗進行 曝光之近接式曝光中，因遮罩2接觸於保持機構故無法接 近基板。因此，於本實施例中，將帶吸氣孔上頂銷丨丨採用 對基板1之夾盤1 〇對向面進行吸附支持之構造，藉此，能 夠對基板1接近至數百μιη之距離以對遮罩2進行曝光。 如上述般，根據本發明，由於將基板i相對於夾盤丨〇浮 起保持，故可以非接觸方式平坦地進行保持，不會有「背 面轉印」，又能夠將遮罩圖案正確地（高精度地）曝光（燒 附）於基板上。又，由於基板丨藉由帶吸氣孔上頂銷、真空 157290.doc -22- 201219989 區間而被吸附保持’故於曝光中基板相對於夾盤之位置不 會有變化’一旦進行定位’即便於改變基板之曝光位置進 订曝光之情形時亦無需再次進行定位，能夠縮短定位所需 要之時間。 又’若事前（例如於放置於冷卻板時）測定搭載於搬送機 器人之臂70之前之基板位置（旋轉角之狀態等），則基於此 位置資訊使夾盤10之位置（姿勢）以粗調方式對位，之後， 於由帶吸附孔上頂銷保持基板以後’只要對基板之位置 (姿勢）正確地進行測定、定位，即可高速、高精度地進行 定位。 此處，雖然帶吸氣孔上頂銷之吸附部與真空區間之堤部 接觸於基板，但若使該接觸部之寬度變窄，則不會引起接 觸時所導致之「背面轉印」。作為此寬度之參考值，只要 設為4mm以下即可。 又’該等部分設置於基板之緣側，又，接觸面積亦較 小’因此’該等接觸面積相對於基板全體非常小，縱然發 生背面轉印亦為極小之範圍，為實用上不會成為問題之程 度。 又，對於曝光結束之基板1，藉由執行圖7之相反程序， 可將基板1自夾盤10交接給基板搬送機器人並搬出。 使用圖8說明本發明之第2實施例。與第1實施例不同之 處在於設置用於使基板1恆溫化之冷卻機構之點。其原因 在於：於曝光裝置中來自光源之光會直接照射到基板1， 又或於近接式曝光中’需將藉由連續曝光而被光加熱之遮 157290.doc 23- 201219989 罩2接近於基板1進行曝光，因此有可能使基板w來自遮 ^之㈣溫而發生熱膨m ’故需要使其怪溫化。具體而 言’其原因在於：因若於基板！被加熱發生熱膨服之狀態 下使遮罩圖案進行曝光，則於冷卻時基板收縮、遮罩圖案 發生應變而無法獲得正確之遮罩圖案，從而曝光不良。於 本實施例中，作為怪溫化之方法，於炎盤犯設置怪溫機 構’經由空氣層（膜）對基板lit行冷卻。然而，作為惶溫化 之方法並不偈限於該方法，亦可將特定溫度之空氣流（氣 體）直接吹到基板上之方法等任意方法。 以下，說明於夹盤10上設置恆溫機構1〇〇之例。具體而 曰，為於夾盤10之本體上藉由熱交換器1〇1而使調整到固 定溫度之水於配管102進行循環，由此而可使夾盤10之溫 度保持固定。其反覆進行係為了將基板i保持於固定溫 度X防止基板之熱膨脹（收縮）所導致之遮罩圖案之變 形。於使基板!浮起曝光之方法中，與先前之使基板i接觸 於夾盤10之方法相比，經由空氣膜使其浮起有可能會相應 地降低使基板m溫化（冷卻）之能力。因此，藉由於夹盤ι〇 上設置恆溫機構，可改善使夾盤10之基板恆溫化（冷卻）之 能力，與第丨實施例同樣地可一面確保浮起所導致之高平 坦性一面防止基板之熱膨脹以正確地曝光光罩圖案。 圖9概念性地表示於圖8所示之第2實施例中，基板1之浮 起量Η與曝光時基板！之溫度上升之計算結果。若根據熱膨 腸之容許範圍之上限將基板！之溫度上升之上限設為例如乂 23.2C，則於無恆溫機構1〇〇之情形時需要使基板^之浮起 157290.doc • 24 - 201219989 量Η為Ha以下，而热士 ., 、有恆溫機構100之情形時浮起量為Hb 以下即可。gp，1 , t _ 有恆溫機構100 ,則即便基板之浮起 量争门（Ha Hb) ’基板之熱膨脹之影響亦較小。此處，越 增高基板！曝光時之浮起量H，則即便於較大之塵埃附著於 夹盤表面之情料亦不易受到塵埃之影響，能夠防止「背 轉P」又由於無需將基板1靠近到夾盤1〇，能夠以 較高之浮起量進行曝光，故亦具有能夠縮短基板i之操作 (設定）時間之優點。 進而，可設置如下監視器系統：設置管理基板ι之溫度 之感測器(未圖示），若基板1之溫度為特定之溫度以上，則 中斷曝光’若溫度成為容許範圍則重新開始曝光。又，亦 可添加傳熱生優異之氣體等例如氦以促進浮起之基板1與 夾盤ίο之熱交換。 如上所述般，於本實施例中，藉由設置基板丨之恆溫機 構而可降低基板之溫度變動所導致之曝光不良，並且由於 能夠增高基板1之浮起量故亦具有「背面轉印」之影響減 少、且能夠縮短基板1向夾盤1 〇之設定時間之優點。又， 於本實施例中，藉由將基板丨浮起而進行保持，與第丨實施 例同樣地能夠實現使「背面轉印」減少、不良較少、高品 質之曝光。 使用圖10、圖11來說明本發明之第3實施例。圖i 〇表示 夾盤10表面之形狀，圖11表示其動作說明圖。本實施例與 第1貫施例之不同之處在於，於夾盤之4角設置真空區間 16並將帶吸氣孔上頂銷11設置於真空區間丨6之附近。雖然 157290.doc -25-· 201219989 於本實施例中於真空區間16之前方設置一個帶吸氣孔上頂 銷11，但其場所並沒有特別制約。本實施例中各部分之動 作自第1實施例之圖7(1)到圖7(4)為止均為相同之動作。 即，圖11(1)與圖7(4)之狀態相同，基板1藉由高壓縮空氣 8〇以浮起量H1浮起。又，基板1之一端由帶吸氣孔上頂銷 11進行保持’基板1被保持於特定之位置（姿勢又，於夾 盤10之兩端設置有真空區間16。於圖11(1)中，由於基板！ 之浮起量仍然高達H1，故真空區間16與基板i以間隔G相 刀離。如此，藉由使基板1進行空氣浮起，而可消除因基 板與夾盤進行接觸所產生之基板之皺折、接觸部之變形， 從而取得與第1實施例同樣之效果。 本實施例與第1實施例不同之處在於：於本實施例t如 圖11(2)般帶吸氣孔上頂銷u低於真空區間16之高度H2。 而且，一旦帶吸氣孔上頂銷丨丨降低至與真空區間丨6相同之 高度，便中止基板之吸附保持，原樣進行純並收納於夹 盤10之中。此處’當浮起量達到扣，因真空區間16之高度 被設定成H2故基板1被真空區間16所保持。因此，即便無 帶吸氣孔上頂銷11，基板亦與第丨實施例同樣地相對於央 盤1〇以固定之位置(姿勢)得以保持。又，藉由取代帶吸氣 孔上頂銷丨丨而採用真空區間丨6,可以簡單之構造正確地將 基板1之浮起量保持於特定之浮起量^^。換言之，因帶吸 氣孔上頂銷11藉由馬達使其上下移動，故為了正確地控 制、維持其高度，機構將變得複雜，然而本發明之實施例 般’只要將真空區間之堤部之高度加工成特定之高度即 157290.doc -26 - 201219989 可’故可為單純之構造且高精度地以固定之浮起量保持基 板1。於本實施例中，由設置於夾盤10之4角之真空區間16 進行保持。因此，與實施例i之三點相比，以更強之力使 基板1保持於夾盤10上。此外，該真空區間16之個數當然 可視需要而改變。 如上述般，於本實施例中，能夠放寬帶吸氣孔上頂銷u 之定位精度，提高裝置之生產性，並且獲得與第i實施例 同樣之效果。 · 使用圖12、圖13來說明本發明之第4實施例。本實施例 與第1實施例之不同之處在於：於本實施例中無真空區間 16，且重新於喷出孔13之附近交替地配置複數個吸氣孔 14。於本實施例中，藉由將喷出孔13與吸氣孔14組合進行 設置，而可藉由空氣力之彈簧效果將基板強有力地保持於 特定之浮起高度（基板距離夾盤表面之高度具體而言， 如果於將基板1靠近夾盤1〇之方向上施加力，藉由來自喷 出孔13之壓縮空氣81而產生使基板丨遠離夾盤1〇之方向之 斥力，又，反之如果於使基板1遠離夾盤1〇之方向上施加 力，就藉由來自吸氣孔14之抽吸（減壓）空氣82於退回之方 向上使斥力起作用（這作為採用了伯努利原理之夾盤機構 而為人所知）。如上述般，藉由將喷出孔13及吸氣孔14組 合起來進行設置，即便不設置於第丨實施例所設置之真空 區間16亦能夠將基板1保持於特定之浮起量。因此，可與 第1實施例同樣地將基板1平坦地保持於夾盤1〇上，能夠獲 得與第一實施例同樣之效果。又，還可消除有可能因真空 I57290.doc -27- 201219989 區間16與基板之接觸而產生之「背面轉印」。進而，於本 實施例中，藉由於基板之整面上設置喷出孔13及吸氣孔 14，可期待於基板1之全體設置有空氣彈簧之效果，將基 板1牢固地保持為特定之浮起量，由於不易受到源於遮罩 離開接近基板1之壓力變動所導致之擾動（外力）之影響，能 夠使遮罩與基板之距離穩定並保持固定，故可於基板J上 曝光精度高之遮罩圖案。 又，由於自喷出孔13所喷出之壓縮空氣81係自吸氣孔14 作為抽吸空氣82而從基板1與夾盤1〇之間排出，故可防止 來自喷出孔13之壓縮空氣殘留於基板丨與夾盤1〇之間（難以 排出），使基板1之中央鼓起來而破壞基板丨平坦度。 备然，此種課題例如於第丨實施例中，可於噴出孔13周 圍設置槽，經由該槽將壓縮空氣81自基板丨與夾盤ι〇之間 排放到外部。 進而，於本實施例中，設置有用於監控基板1之浮起量H 之浮起量計測機構83 ^該機構亦可為例如雷射測長器之類 之機構，將浮起量Η為零時作為初始值，將自該值起之差 作為浮起量即可。藉由基於來自此浮起量計測機構83之浮 起量=之值來調整喷出孔13、吸氣孔14之強度，從而可正 確地管料起量Η。又，可防止浮起量崎低*使基板旧 觸於夾盤10，又， 變動到特定之溫度 率〇 亦可防止浮起量η增加而使基板1之溫度 以上。據此’可降低曝光不良之發生頻 使用圖14說明本發明之第5實施例。本實施例與第3實施 157290.doc •28· 201219989 例之不同之處在於：於本實施例中，如圖14(0所示般，於 夾盤10上並無第3實施例中所設置之帶吸氣孔上頂銷丨丨及 上頂銷12，而是於夾盤1〇上設置有缺口 21，以及設置有1 有插入該缺口 21之凸部23之副夾盤17。 該副夹盤17包含：用於吸附保持基板i且將其搬運到夹 盤之移動式吸附墊18 ;用於引導該移動之導軌19;及喷 出用於使基板1空氣浮起之壓縮空氣之喷出孔13。於副夹 盤17之整面設置有喷出孔13，於副夾盤17上，藉由來自該 等喷出孔13之高壓縮空氣8〇，而如圖14(2)般將藉由輸送機 (未圖示）等自生產線之上游搬運來之基板1浮起支持。此時 之浮起量為用於搬送基板1之浮起高度，例如為與第1實施 例之圖7(4)之用以自利用上頂銷進行之保持轉變成空氣浮 起之浮起量H1相同之高度，且高於曝光時之浮起量H2。 又’移動式吸附墊18收納於副夾盤17之中（自表面向下）， 备基板1自輸送機（未圖示）等搬送到副夾盤丨7時，則自副夹 盤17之中上升，如圖14(2)般於吸附保持基板丨之端部後， 順著導軌19如箭頭22般將基板1搬送到夾盤1〇。此外，於 田J夾盤17上’為了使自輸送機搬送而來之基板不會掉落， 亦於周圍a又置有擋塊（未圖示）。因此，於移動式吸附墊18 保持基板1以前，不會自副載物台掉落。 於副夾盤17上設置有凸部23，該凸部23插入至夾盤1〇之 缺口 21之中。又，由於導軌19設置直到上述凸部之前端為 止，故藉由使移動式吸附墊18順著該導軌19移動，可將基 板1自副夾盤17運送到夾盤10〇在藉由移動式吸附墊18自 157290.doc -29· 201219989 副夹盤17運送基板1時，如圖14(2)所示般，自副夾盤口與 夹盤10之喷出孔13喷出高壓縮空氣8〇，使基板丨以搬送用 之浮起量H2浮起並搬運。圖中虛線之基板丨與移動式吸附 墊18係概念性地顯示基板丨自副夾盤17搬送到夾盤ι〇之中 途之狀態。當移動式吸附墊18移動到導軌19之左端，即， 將基板1自副夾盤17搬送到夾盤10時，移動式吸附墊18沿 夾盤ίο之表面方向下降，又，同時來自喷出孔13之高壓縮 空氣80之氣壓變小，基板！之浮起量自搬送時之浮起量H2 下降至曝光用浮起量HI。於夾盤1〇上，與第！、第3實施例 同樣地设置有真空區間16，因其高度被設定成與曝光用之 浮起ΪΗ1相同之尚度’故基板！藉由該真空區間16以於面 内方向上不會移動之方式受到保持。又，如前述般，藉由 壓縮空氣被浮起保持於夾盤10之上。於該狀態下基板i被 曝光。當基板1之浮起量降低、由真空區間丨6進行保持 時’移動式吸附墊18停止吸附動作，離開基板1並進一步 向下方降下’且待機直至基板丨被曝光為止。 曝光一結束移動式吸附墊18便上升直至曝光用浮起量JJ2 為止’當吸附保持基板1時’來自喷出孔13之壓縮空氣之 氣壓變強’且使基板1上升至搬運用之浮起量Η1β伴隨於 基板1之上升移動式吸附墊18亦上升至Η1。此處，於基板1 之曝光結束’自曝光浮起量Η2變成搬運用之浮起量hi 時，藉由停止真空區間16之真空而可使基板1迅速地進行 上升。保持已曝光基板1並上升至Η1之移動式吸附墊is自 上述凸部23沿著導軌19移動，之後’解除吸附而被收納於S 201219989, in the method of eliminating the previous contact support, the contact sequence between the substrate and the chuck may be caused by the state of the contact between the substrate and the chuck, and may be caused by the wrinkles and deformation of the air remaining between the substrate and the contact surface. Even when wrinkles occur for some reason, the wrinkles and deformations are eliminated (released) by floating from the chuck 10, thereby ensuring the flatness of the substrate 1. Thereby, exposure with high precision (close to the pattern shape of the mask) can be performed. Further, as will be described in detail, in the method of providing a plurality of convex portions and a vacuum section including the intake holes and the banks, the degree of vacuum in each vacuum section is different due to the unevenness of the height of the banks. As a result, the contact strength (state) between the bank and the substrate changes, and "back transfer" which is in the shape of the substrate holding surface may occur. In addition, when the substrate i is placed on the chuck 10 at a high speed, some of the reasons why the air is not completely discharged or the like is left in contact with the peripheral portion of the substrate from the center of the substrate. In the case of the vacuum section 16, even if the remaining air is exhausted by the vacuum section or the air hole, the substrate 1 is slid on the surface of the chuck 1 due to the contact friction between the peripheral portion of the substrate 1 and the chuck 1〇. Therefore, it is possible that the wrinkles (deformation) are not released and the flatness of the substrate is lost. However, in the present embodiment in which the substrate is floated, the "back transfer" does not occur because the substrate and the chuck are non-contacted (the shape of the substrate holding surface is changed). Further, even when the robot arm is supported by the upper pin or the like, deformation (wrinkles) or the like occurs on the substrate for some reason, and the substrate 1 is once held up on the chuck 10 (Fig. When the deformation (wrinkle) is released (eliminated) to achieve high flatness. Also, because the substrate is air-floated, even if the substrate is lowered to the chuck 157290.doc -21 - 201219989, the air is discharged. Therefore, there is no bulging remaining in the central portion of the substrate. Further, it is not necessary to provide a plurality of minute projections provided in the support substrate which are necessary in the prior art, and to discharge air generated when the substrate is placed on the chuck. The air hole can be easily fabricated. Further, since one end surface of the substrate 1 is held by the top pin 带 with the suction hole, and the two end faces are held by the vacuum section 16, even if the mask is close to the substrate When the compressed (high-pressure) air generated between the two causes the substrate to be pushed onto the chuck, the substrate seems to be self-clamping even when the vacuum pressure generated by the mask leaving the substrate In the case of peeling off, the position of the substrate 1 is not offset from the chuck 1 . Further, since the height of the top pin 带 on the suction hole is from the surface of the chuck 1 and the height of the bank of the vacuum section 16 is set. The height is the same as the floating amount 112 at this time, so that a uniform floating amount can be achieved. As a holding mechanism of the substrate 1, in the method of holding both surfaces of the substrate by mechanical, electrical, or adsorption force, In the proximity exposure in which the mask 2 is close to the substrate, since the mask 2 is in contact with the holding mechanism, the substrate cannot be accessed. Therefore, in the present embodiment, the top pin 带 on the suction hole is used for the substrate 1 The chuck 1 has a structure in which the opposing surface is adsorbed and supported, whereby the substrate 1 can be exposed to a distance of several hundred μm to expose the mask 2. As described above, according to the present invention, since the substrate i is opposed to the clip Since the disk is floated and held, it can be held flat without contact, and the "back transfer" can be prevented, and the mask pattern can be accurately (high-precision) exposed (burned) on the substrate. Since the substrate is sucked by the tape The pin on the hole, the vacuum 157290.doc -22- 201219989 interval is adsorbed and held. Therefore, there is no change in the position of the substrate relative to the chuck during exposure. Once the positioning is performed, even if the exposure position of the substrate is changed, the exposure is changed. In this case, it is not necessary to perform positioning again, and the time required for positioning can be shortened. Further, if the position of the substrate (such as the state of the rotation angle) before the arm 70 of the transfer robot is measured beforehand (for example, when placed on the cooling plate), Based on the position information, the position (posture) of the chuck 10 is aligned in a coarse adjustment manner, and then, after the substrate is held by the pin on the suction hole, the position (posture) of the substrate is accurately measured and positioned, that is, Positioning can be performed at high speed and with high precision. Here, the suction portion with the top pin on the suction hole is in contact with the substrate of the vacuum section, but if the width of the contact portion is narrowed, the contact is not caused. The resulting "back transfer". As the reference value of this width, it is only required to be 4 mm or less. Moreover, the portions are disposed on the edge of the substrate, and the contact area is also small. Therefore, the contact areas are extremely small with respect to the entire substrate, and even if the back surface transfer occurs, the range is extremely small, which is practically not The extent of the problem. Further, by performing the reverse procedure of FIG. 7 on the substrate 1 after the exposure, the substrate 1 can be transferred from the chuck 10 to the substrate transfer robot and carried out. A second embodiment of the present invention will be described with reference to Fig. 8 . The difference from the first embodiment lies in the point of providing a cooling mechanism for thermostating the substrate 1. The reason is that the light from the light source is directly irradiated to the substrate 1 in the exposure device, or in the proximity exposure, the light that needs to be heated by continuous exposure is 157290.doc 23- 201219989 The cover 2 is close to the substrate Since the exposure is performed, it is possible to cause the substrate w to come from the (four) temperature and cause thermal expansion. Specifically, the reason is: because of the substrate! When the mask pattern is exposed while being heated and heated, the substrate shrinks during cooling and the mask pattern is strained, so that a correct mask pattern cannot be obtained, resulting in poor exposure. In the present embodiment, as a method of smearing the temperature, the singularity mechanism is disposed in the inflammatory disk, and the substrate is lit by the air layer (film). However, the method of temperature-increasing is not limited to this method, and any method such as a method of directly blowing an air stream (gas) at a specific temperature onto a substrate may be employed. Hereinafter, an example in which the thermostat mechanism 1 is provided on the chuck 10 will be described. Specifically, in order to circulate the water adjusted to the fixed temperature by the heat exchanger 1〇1 on the body of the chuck 10, the temperature of the chuck 10 can be kept constant. This is repeated in order to maintain the substrate i at a fixed temperature X to prevent deformation of the mask pattern caused by thermal expansion (shrinkage) of the substrate. In the method of causing the substrate to be exposed to light, compared with the prior method of bringing the substrate i into contact with the chuck 10, floating through the air film may correspondingly reduce the ability to warm (cool) the substrate m. . Therefore, by providing a thermostatic mechanism on the chuck, the ability to thermostatize (cool) the substrate of the chuck 10 can be improved, and the substrate can be prevented from being flattened while maintaining high flatness as in the third embodiment. The heat expands to properly expose the reticle pattern. Fig. 9 is conceptually shown in the second embodiment shown in Fig. 8, the amount of floating of the substrate 1 and the substrate at the time of exposure! The calculation result of the temperature rise. If the substrate is based on the upper limit of the allowable range of the thermal expansion! When the upper limit of the temperature rise is set to, for example, 乂23.2C, it is necessary to float the substrate 157290.doc • 24 - 201219989 in the case of no thermostat mechanism, and the amount is below Ha, and the hotspot, In the case of the thermostat mechanism 100, the amount of floating may be equal to or less than Hb. When gp,1, t _ has the thermostatic mechanism 100, the influence of thermal expansion of the substrate is small even if the floating amount of the substrate (Ha Hb). Here, the higher the substrate! The amount of floating H during exposure is less susceptible to dust even when larger dust adheres to the surface of the chuck, preventing "back-turning P" and eliminating the need to bring the substrate 1 close to the chuck 1 Since the exposure can be performed with a high floating amount, there is an advantage that the operation (setting) time of the substrate i can be shortened. Further, a monitor system (not shown) for setting the temperature of the management substrate ι can be provided, and if the temperature of the substrate 1 is equal to or higher than a specific temperature, the exposure is interrupted. If the temperature becomes an allowable range, the exposure is restarted. Further, it is also possible to add a gas such as ruthenium which is excellent in heat transfer, for example, to promote heat exchange between the floating substrate 1 and the chuck. As described above, in the present embodiment, the exposure failure due to the temperature fluctuation of the substrate can be reduced by providing the constant temperature mechanism of the substrate, and the "back transfer" can be also achieved because the floating amount of the substrate 1 can be increased. The effect is reduced and the advantage of the set time of the substrate 1 to the chuck 1 can be shortened. Further, in the present embodiment, by holding the substrate up and holding it, it is possible to achieve a reduction in "back transfer" and a small defect and high-quality exposure as in the third embodiment. A third embodiment of the present invention will be described with reference to Figs. 10 and 11 . Fig. 〇 shows the shape of the surface of the chuck 10, and Fig. 11 shows an operation diagram thereof. This embodiment differs from the first embodiment in that a vacuum section 16 is provided at the four corners of the chuck and the top pin 11 with the suction hole is provided in the vicinity of the vacuum section 丨6. Although 157290.doc -25-201220129 is provided with a top pin 11 with an air suction hole in front of the vacuum section 16 in this embodiment, the place is not particularly limited. The operation of each part in the present embodiment is the same as that of Figs. 7(1) to 7(4) of the first embodiment. That is, in the state of Fig. 11 (1) and Fig. 7 (4), the substrate 1 is floated by the high-compression air 8 〇 at the floating amount H1. Further, one end of the substrate 1 is held by the top pin 11 with the suction hole. The substrate 1 is held at a specific position (the posture is again provided, and the vacuum section 16 is provided at both ends of the chuck 10. In Fig. 11 (1) Since the floating amount of the substrate is still as high as H1, the vacuum section 16 is separated from the substrate i by a gap G. Thus, by causing the substrate 1 to float, the contact between the substrate and the chuck can be eliminated. The wrinkles of the substrate and the deformation of the contact portion achieve the same effects as those of the first embodiment. This embodiment differs from the first embodiment in that it is inhaled as in the present embodiment t as shown in Fig. 11 (2). The top pin u of the hole is lower than the height H2 of the vacuum section 16. Moreover, once the top pin 带 on the suction hole is lowered to the same height as the vacuum section 丨6, the adsorption and holding of the substrate is stopped, and the original is stored and stored as it is. In the chuck 10, here, when the floating amount reaches the buckle, since the height of the vacuum section 16 is set to H2, the substrate 1 is held by the vacuum section 16. Therefore, even if the top pin 11 is not provided with the suction hole, the substrate Also in the same position as the second embodiment, it is fixed at a position relative to the center disk 1 In addition, by replacing the top pin 带 with the suction hole and using the vacuum section 丨6, it is possible to accurately maintain the floating amount of the substrate 1 at a specific floating amount ^^ in other words. Since the top pin 11 with the suction hole is moved up and down by the motor, the mechanism becomes complicated in order to properly control and maintain the height thereof. However, as long as the embodiment of the present invention is used, the bank of the vacuum section is The height is processed to a specific height, that is, 157290.doc -26 - 201219989. Therefore, the substrate 1 can be held in a simple structure and with a high precision in a fixed floating amount. In the present embodiment, it is provided by the chuck 10 The vacuum section 16 of the corners is held. Therefore, the substrate 1 is held on the chuck 10 with a stronger force than the three points of the embodiment i. Further, the number of the vacuum sections 16 can of course be changed as needed. As described above, in the present embodiment, the positioning accuracy of the jack pin u on the wide-band air intake hole can be increased, the productivity of the apparatus can be improved, and the same effects as those of the i-th embodiment can be obtained. - The description will be made using Figs. 12 and 13 A fourth embodiment of the present invention. This embodiment The difference from the first embodiment is that in the present embodiment, there is no vacuum section 16, and a plurality of suction holes 14 are alternately arranged in the vicinity of the ejection hole 13. In the present embodiment, by spraying The outlet hole 13 is disposed in combination with the air suction hole 14, and the substrate can be strongly maintained at a specific floating height by the spring force effect of the air force (the height of the substrate from the chuck surface, specifically, if the substrate 1 is to be A force is applied in the direction of the chuck 1 ,, and the repulsive force of the substrate 丨 away from the chuck 1 产生 is generated by the compressed air 81 from the ejection hole 13 , and vice versa if the substrate 1 is moved away from the chuck 1 The force is applied in the direction, and the repulsive force acts in the direction of retraction by the suction (decompression) air 82 from the suction hole 14 (this is known as a chuck mechanism using the Bernoulli principle). ). As described above, by providing the discharge holes 13 and the intake holes 14 in combination, the substrate 1 can be held at a specific floating amount without being provided in the vacuum section 16 provided in the second embodiment. Therefore, the substrate 1 can be held flat on the chuck 1 in the same manner as in the first embodiment, and the same effects as those of the first embodiment can be obtained. Further, it is possible to eliminate the "back transfer" which may occur due to the contact of the gap 16 with the substrate in the vacuum I57290.doc -27-201219989. Further, in the present embodiment, since the discharge holes 13 and the intake holes 14 are provided on the entire surface of the substrate, it is expected that the effect of the air spring is provided on the entire substrate 1, and the substrate 1 is firmly held in a specific float. Since the amount of the amount is less susceptible to the disturbance (external force) caused by the pressure fluctuation of the mask from the substrate 1, the distance between the mask and the substrate can be stabilized and kept constant, so that the exposure accuracy on the substrate J can be high. Mask pattern. Further, since the compressed air 81 ejected from the ejection holes 13 is discharged from the substrate 1 and the chuck 1 from the suction holes 14 as the suction air 82, the compressed air from the ejection holes 13 can be prevented. It remains between the substrate 丨 and the chuck 1 (it is difficult to discharge), and the center of the substrate 1 is bulged to break the flatness of the substrate. Further, such a subject, for example, in the third embodiment, a groove may be provided around the discharge hole 13 through which the compressed air 81 is discharged from the substrate 丨 and the chuck ι to the outside. Further, in the present embodiment, a floating amount measuring mechanism 83 for monitoring the floating amount H of the substrate 1 is provided. The mechanism may be a mechanism such as a laser length measuring device, and the floating amount is reduced to zero. When the time is the initial value, the difference from the value may be used as the floating amount. By adjusting the strength of the discharge holes 13 and the suction holes 14 based on the value of the floating amount from the floating amount measuring mechanism 83, the amount of enthalpy can be accurately controlled. Further, it is possible to prevent the floating amount from being low. * The substrate is brought into contact with the chuck 10, and the temperature is changed to a specific temperature. 浮 The floating amount η can be prevented from increasing to increase the temperature of the substrate 1. According to this, the occurrence frequency of the exposure failure can be reduced. The fifth embodiment of the present invention will be described with reference to Fig. 14 . This embodiment differs from the third embodiment 157290.doc • 28·201219989 in that, in the present embodiment, as shown in FIG. 14 (0), the chuck 10 is not provided in the third embodiment. The top pin 丨丨 and the upper pin 12 of the suction hole are provided, and a notch 21 is provided on the chuck 1 , and a sub-clip 17 having a convex portion 23 inserted into the notch 21 is provided. The chuck 17 includes: a movable adsorption pad 18 for adsorbing and holding the substrate i and transporting it to the chuck; a guide rail 19 for guiding the movement; and a spray of compressed air for ejecting the air of the substrate 1 The outlet hole 13. The discharge hole 13 is provided on the entire surface of the sub-clamp 17 on the sub-clip 17 by the high compressed air 8〇 from the ejection holes 13, as shown in Fig. 14(2). The substrate 1 transported from the upstream of the production line by a conveyor (not shown) or the like is supported by floating. The amount of floating at this time is the floating height for transporting the substrate 1, and is, for example, a map of the first embodiment. 7(4) is used to maintain the same height as the floating amount H1 of the air floating from the upper pin, and is higher than the floating amount H2 during the exposure. The adsorption pad 18 is housed in the sub chuck 17 (downward from the surface), and when the backup substrate 1 is transported from the conveyor (not shown) or the like to the sub chuck 丨 7, it rises from the sub chuck 17 as 14(2), after the end portion of the substrate 吸附 is adsorbed and held, the substrate 1 is transported to the chuck 1 along the guide rail 19 as indicated by the arrow 22. Further, the Y-J chuck 17 is transported to the self-conveyor. The substrate does not fall, and a stopper (not shown) is placed around the periphery a. Therefore, before the movable adsorption pad 18 holds the substrate 1, it does not fall from the sub-stage. The disk 17 is provided with a convex portion 23 which is inserted into the notch 21 of the chuck 1A. Further, since the guide rail 19 is provided up to the front end of the convex portion, the movable adsorption pad 18 is passed along The guide rail 19 is moved to transport the substrate 1 from the sub-clamp 17 to the chuck 10, and when the substrate 1 is transported by the movable chuck 18 from the 157290.doc -29· 201219989 sub-clip 17 as shown in Fig. 14 (2) As shown in the figure, the high-compressed air 8 喷 is ejected from the sub-clip port and the ejection hole 13 of the chuck 10, and the substrate 浮 is floated and transported by the floating amount H2 for conveyance. The dashed substrate 丨 and the movable adsorption pad 18 conceptually show the state in which the substrate 搬 is transported from the sub-clip 17 to the chuck ι. When the movable adsorption pad 18 is moved to the left end of the guide rail 19, that is, the substrate When the sub- chuck 17 is transported to the chuck 10, the movable adsorption pad 18 is lowered in the direction of the surface of the chuck ίο, and at the same time, the air pressure of the high-compressed air 80 from the ejection hole 13 becomes small, and the floating of the substrate! The amount of float H2 at the time of the transfer is reduced to the amount of float HI for exposure. The vacuum section 16 is provided on the chuck 1 in the same manner as in the third and third embodiments, and the height is set to be used for exposure. The floating ΪΗ 1 the same as the degree 'the substrate! The vacuum section 16 is held in such a manner that it does not move in the in-plane direction. Further, as described above, the compressed air is floated and held on the chuck 10. In this state, the substrate i is exposed. When the floating amount of the substrate 1 is lowered and held by the vacuum section 丨6, the mobile adsorption pad 18 stops the adsorption operation, leaves the substrate 1 and further lowers downward, and stands by until the substrate 丨 is exposed. When the exposure is completed, the movable adsorption pad 18 is raised until the exposure floating amount JJ2. 'When the substrate 1 is adsorbed and held, the pressure of the compressed air from the ejection hole 13 becomes strong' and the substrate 1 is raised to the floating position for transportation. The amount of Η1β accompanying the rising mobile adsorption pad 18 of the substrate 1 also rises to Η1. Here, when the exposure end of the substrate 1 is changed from the exposure floating amount Η2 to the floating amount hi for conveyance, the substrate 1 can be quickly raised by stopping the vacuum in the vacuum section 16. The movable adsorption pad is, which holds the exposed substrate 1 and rises to the crucible 1, moves from the convex portion 23 along the guide rail 19, and then is desorbed and stored therein.

157290.doc -30- S 201219989 副夾盤17之中。已被曝光之基板丨自副夾盤17被傳遞到生 產線之下游之帶式輸送機等搬送機構（搬送機構未圖示）。 此外，此處’關於移動式吸附墊丨8之吸附機構及上下機 構，例如與第1實施例之帶吸氣孔上頂銷丨丨同樣地利用基 於真空泵之吸附力（真空力）、基於馬達之上下機構而可實 現，故於此處未圖示。又，來自喷出孔13之壓縮空氣之強 度切換亦可如第1實施例般藉由電磁閥等來切換高壓縮與 低壓縮空氣而可現，故未圖示》 根據本實施例，藉由將自輸送機等所運送之基板丨於副 夾盤17使其空氣浮起而進行接受，而可省去基板搬送用之 機器人、另外亦能夠自夾盤10省去用於自上述機器人之臂 接受基板之上頂銷，故能夠簡化裝置之構成，可使裝置之 生產性提高。 又，於本實施例令，亦可使基板丨變得平坦進行曝光， 故可與p、第3實施例同樣地降低曝光不良而進行高精度 之曝光。 & 藉由使用本發明之曝光裝置或者暾氺 一 不有曝丸方法進行基板曝 光，而可縮短基板向夾盤搭載所需要之時間，且能夠減少 基板之應變以及背面轉印所導致之良 〜个民囚此，可以較短 之產距時間且良率佳地製造顯示用面板基板。 此外’雖然於上述之實施例中以具有區 令心進行了㈣，但本實施财所揭示 X盤為 ^ a 1词不艾内各亦可應用於 不具有區劃之所謂平底夾盤中。 【圖式簡單說明】157290.doc -30- S 201219989 Among the secondary chucks 17. The substrate 丨 which has been exposed is transferred from the sub-clamp 17 to a transport mechanism such as a belt conveyor downstream of the production line (transport mechanism is not shown). In addition, the adsorption mechanism and the upper and lower mechanism of the mobile adsorption pad 8 are based on the adsorption force (vacuum force) based on a vacuum pump, for example, in the same manner as the top pin 丨丨 on the suction hole of the first embodiment. It can be realized by the upper and lower mechanisms, so it is not shown here. Further, the intensity switching of the compressed air from the discharge port 13 can be switched by switching the high compression and the low compressed air by a solenoid valve or the like as in the first embodiment, and therefore, not shown, by the present embodiment, The substrate conveyed from the conveyor or the like is placed on the sub-clamp 17 to be floated and received, and the robot for substrate transfer can be omitted, and the arm for the robot can be omitted from the chuck 10 By accepting the top pin on the substrate, the configuration of the device can be simplified, and the productivity of the device can be improved. Further, in the present embodiment, the substrate 丨 can be made flat and exposed. Therefore, in the same manner as in the third embodiment, the exposure failure can be reduced and the exposure can be performed with high precision. & By using the exposure apparatus of the present invention or the substrate exposure without the exposure method, the time required for the substrate to be mounted on the chuck can be shortened, and the strain of the substrate and the backside transfer can be reduced. ~ A prisoner can make a display panel substrate with a short production time and good yield. Further, although it has been carried out in the above-described embodiment with a ambiguous heart (4), the present invention discloses that the X disk is ^ a 1 word and can be applied to a so-called flat bottom chuck which does not have a division. [Simple description of the map]

157290.doc 201219989 圖1係表示本發明一實施形態之曝光裝置之概略構成之 圖。 圖2係本發明一實施形態之曝光裝置之夾盤之俯視圖。 圖3係圖2之A-A别面圖。 圖4係圖2之B-B剖面圖。 圖5係圖2之C-C剖面圖。 圖6係圖2之D-D剖面圖。 圖7(1)-(5)係本發明一實施形態之基板搬送、保持機構 之說明圖。 圖8係本發明第2實施形態之夾盤恆溫構造之說明圖。 圖9係本發明第2實施形態之效果說明圖。 圖10係本發明第3實施形態之基板保持機構之說明圖。 圖11(1)、（2)係本發明第3實施形態之基板保持機制之說 明圖。 圖12係本發明第4實施形態之基板保持機構之說明圖。 圖13係本發明第4實施形態之基板保持機制之說明圖。 圖14(1)、（2)係本發明第5實施形態之基板搬運機制之說 明圖。 圖15(1)、（2)係先前技術課題之說明圖。 · 【主要元件符號說明】 1 基板 2 遮罩 3 基底 4 X導件 157290.doc „157290.doc 201219989 Fig. 1 is a view showing a schematic configuration of an exposure apparatus according to an embodiment of the present invention. Fig. 2 is a plan view showing a chuck of an exposure apparatus according to an embodiment of the present invention. Figure 3 is a side view of the A-A of Figure 2. Figure 4 is a cross-sectional view taken along line B-B of Figure 2. Figure 5 is a cross-sectional view taken along line C-C of Figure 2. Figure 6 is a cross-sectional view taken along line D-D of Figure 2. Fig. 7 (1) to (5) are explanatory views of a substrate transporting and holding mechanism according to an embodiment of the present invention. Fig. 8 is an explanatory view showing a thermostatic structure of a chuck according to a second embodiment of the present invention. Fig. 9 is an explanatory view showing the effect of the second embodiment of the present invention. Fig. 10 is an explanatory view of a substrate holding mechanism according to a third embodiment of the present invention. Fig. 11 (1) and (2) are explanatory views of a substrate holding mechanism according to a third embodiment of the present invention. Fig. 12 is an explanatory view showing a substrate holding mechanism according to a fourth embodiment of the present invention. Fig. 13 is an explanatory view showing a substrate holding mechanism in a fourth embodiment of the present invention. Fig. 14 (1) and (2) are views showing a substrate transport mechanism according to a fifth embodiment of the present invention. 15(1) and (2) are explanatory views of the prior art problems. · [Main component symbol description] 1 Substrate 2 Mask 3 Substrate 4 X Guide 157290.doc „

32 S 201219989 5 X載物台 6 Υ導件 7 Υ載物台 8 Θ載物台 9 Ζ-傾斜機構 10 夾盤 11 帶吸氣孔上頂銷 12 上頂銷 13 喷出孔 14 吸氣孔 15 堤部 16 真空區間 17 副夾盤 18 移動式吸附墊 19 導軌 20 遮罩支架 21 缺口 22 移動方向 23 凸部 30 管接頭 40 管接頭 54 管接頭 31 配管 41 配管 -33-32 S 201219989 5 X Stage 6 Υ Guide 7 Υ Stage 8 Θ Stage 9 Ζ-Tilt mechanism 10 Clamp 11 With suction hole Top pin 12 Upper pin 13 Eject hole 14 Suction hole 15 Embankment 16 Vacuum section 17 Sub-clamp 18 Mobile suction pad 19 Guide rail 20 Cover bracket 21 Notch 22 Direction of movement 23 Projection 30 Pipe joint 40 Pipe joint 54 Pipe joint 31 Pipe 41 Pipe -33-

157290.doc 201219989 55 配管 32 高壓縮空氣用電磁閥 33 低壓縮空氣用電磁閥 50 吸附墊部 51 吸附孔 52 缸體部 53 空氣流路 56 上下驅動馬達 57 帶吸氣孔上頂銷移動方向 58 帶吸氣孔上頂銷用孔 60 馬達 61 上頂銷移動方向 70 臂 80 高壓縮空氣 81 壓縮空氣 82 抽吸空氣 83 浮起量計測機構 90 間隙G(基板與真空區間之間隔） 91 浮起量Η(基板與夾盤表面之間隔） 100 恆溫機構 101 熱交換器 102 配管 200 真空力 201 皺折 157290.doc -34-157290.doc 201219989 55 Piping 32 High-compressed air solenoid valve 33 Low-compressed air solenoid valve 50 Adsorption pad section 51 Adsorption hole 52 Cylinder part 53 Air flow path 56 Upper and lower drive motor 57 With suction hole Upper pin movement direction 58 Pinch hole with suction hole 60 Motor 61 Upper pin movement direction 70 Arm 80 High compressed air 81 Compressed air 82 Suction air 83 Float amount measuring mechanism 90 Gap G (interval between substrate and vacuum section) 91 Float Measuring Η (interval between substrate and chuck surface) 100 thermostat mechanism 101 heat exchanger 102 piping 200 vacuum force 201 wrinkle 157290.doc -34-

SS

Claims (1)

201219989 七、申請專利範圍：201219989 VII. Patent application scope: 一種曝光裝置， 於： 其係於基板上曝光圖案者，其特徵在 其使上述基板相 包含搭載上述基板之第丨搭載部；且 上述第1搭載部包含第1基板浮起部， 對於上述第1搭載部浮起。 2. 如請求項1之曝光裝置，豆中上诚埜 v、T上这第1基板洋起部包含向 上述基板供給介質之供給部。 3. 如請求項2之曝光裝置，其中上述供給部 向上述基板供給第i介質及a力低於上述以介質之第 2介質，且 控制上述第i介質之供給量與上述第2介質之供給量。 4·如請求⑹之曝光裝置，其中上述第i搭載部包含載置上 述基板之第1上下移動部。 5_如請求項4之曝光裝置，盆中卜祕笛1 /、甲上述第1上下移動機構包含 吸附上述基板之基板吸附部。 6. 如請求項4之曝光裝置，其中上述第丄搭載部包含載置上 述基板之第2上下移動部；且 上述第1上下移動部與上述第2上下移動部同步地移 動。 7. 如請求項1之曝光裝置，纟中上述第i搭載部包含較上述 第1搭載部上之氣壓低之低氣壓區間。 8. 如請求項7之曝光裝置，其中上述低氣壓區間包含： 堤部，其包圍上述第1搭載部上之一部分空間；及 157290.doc 201219989 排氣部，其配置於上述堤部内。 9. 10. 11. 12. 13. 14. 如請求項7之曝光裝置，其中上 篦T上述低氧壓區間位於上述 弟1搭載部之角部。 如請求項2之曝光裝置，其中上 ^ Ώ Τ上述第1搭載部包含吸氣 σΡ其吸出上述基板與上述第1搭載部之間之空氣。 如凊求項10之曝光裝置，其中 i述供給部包含喷出孔； 上述吸氣部包含吸氣孔； =喷出孔及上述吸氣孔係交替地配置於上述第丨搭 孰σ卩上。 ::請：項!之曝光裝置’其中上述搭载部包含溫度控, σΡ其控制上述基板與上述第1搭載部之間之溫度。 如請求m之曝光裝置，其中包含浮起量測定以 定上述基板之浮起量； 〃 上述洋起部基於上述浮起量測定部之測定結果控 述浮起量。 W 如清求項1之曝光裝置，其令包括第2搭載部； 上述第2搭載部包含： 搬送部，其向上述第1搭載部搬送上述基板；及 第2基板浮起部，其使上述基板相對於第2搭载部浮 157290.doc 8An exposure apparatus for exposing a pattern on a substrate, wherein the substrate includes a second mounting portion on which the substrate is mounted; and the first mounting portion includes a first substrate floating portion, 1 The mounting part floats. 2. The exposure apparatus of claim 1, wherein the first substrate rising portion on the top of the machine, the upper substrate v, T, includes a supply portion for supplying the medium to the substrate. 3. The exposure apparatus according to claim 2, wherein the supply unit supplies the i-th medium to the substrate and the second medium having a lower force than the medium, and controls supply of the i-th medium and supply of the second medium the amount. 4. The exposure apparatus according to (6), wherein the i-th mounting portion includes a first vertical moving portion on which the substrate is placed. 5) The exposure apparatus of claim 4, wherein the first up-and-down moving mechanism comprises a substrate adsorbing portion that adsorbs the substrate. 6. The exposure apparatus according to claim 4, wherein the second mounting portion includes a second vertical moving portion on which the substrate is placed; and the first vertical moving portion moves in synchronization with the second vertical moving portion. 7. The exposure apparatus according to claim 1, wherein the i-th mounting portion includes a low air pressure portion that is lower than a pressure on the first mounting portion. 8. The exposure apparatus according to claim 7, wherein the low air pressure section includes: a bank portion surrounding a portion of the space on the first mounting portion; and 157290.doc 201219989 an exhaust portion disposed in the bank portion. 9. 10. 11. 12. 13. 14. The exposure apparatus of claim 7, wherein the lower oxygen pressure section of the upper 篦T is located at a corner of the mounting portion of the first brother. The exposure apparatus according to claim 2, wherein the first mounting portion includes the intake air σ, and the air between the substrate and the first mounting portion is sucked. An exposure apparatus according to claim 10, wherein the supply unit includes a discharge hole; the intake unit includes an intake hole; and the discharge hole and the intake hole are alternately arranged on the second stack σ卩. ::Exposure device: The exposure device includes a temperature control, and σ controls the temperature between the substrate and the first mounting portion. An exposure apparatus for requesting m includes a floating amount measurement to determine a floating amount of the substrate; and 〃 the rising portion controls the floating amount based on a measurement result of the floating amount measuring unit. The exposure apparatus according to claim 1, wherein the second mounting unit includes: a transport unit that transports the substrate to the first mounting unit; and a second substrate floating unit that causes the The substrate floats with respect to the second mounting portion 157290.doc 8
TW100123549A 2010-08-06 2011-07-04 for installing a mechanism in the apparatus to cause the substrate to float and maintain the substrate in a non-contact manner so that there will be no exposure problem caused by the substrate floating TW201219989A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010176900A JP2012038874A (en) 2010-08-06 2010-08-06 Liquid crystal exposure apparatus

Publications (1)

Publication Number Publication Date
TW201219989A true TW201219989A (en) 2012-05-16

Family

ID=45794152

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100123549A TW201219989A (en) 2010-08-06 2011-07-04 for installing a mechanism in the apparatus to cause the substrate to float and maintain the substrate in a non-contact manner so that there will be no exposure problem caused by the substrate floating

Country Status (4)

Country Link
JP (1) JP2012038874A (en)
KR (1) KR20120013908A (en)
CN (1) CN102375346A (en)
TW (1) TW201219989A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5618425B2 (en) * 2012-02-23 2014-11-05 東京エレクトロン株式会社 Peripheral exposure method and peripheral exposure apparatus
HK1216357A1 (en) * 2012-11-30 2016-11-04 Nikon Corporation Transfer system, exposure apparatus, transfer method, exposure method, device manufacturing method, and suction apparatus
CN104375391B (en) * 2014-12-10 2016-08-31 志圣科技（广州）有限公司 The control method of a kind of litho machine and device
JP7022589B2 (en) * 2018-01-05 2022-02-18 東京エレクトロン株式会社 Board processing equipment, board processing method and computer storage medium
JP7202907B2 (en) * 2019-01-28 2023-01-12 Ｊｓｗアクティナシステム株式会社 LASER PROCESSING DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE
EP4342584A3 (en) * 2019-05-17 2024-06-19 Hitachi High-Tech Corporation Automated analyzer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940823B2 (en) * 1994-12-26 2007-07-04 株式会社ニコン Stage device and control method thereof
JP2006097065A (en) * 2004-09-29 2006-04-13 Tsukuba Seiko Co Ltd Alignment device, and alignment method using the same
JP4917780B2 (en) * 2005-09-08 2012-04-18 住友化学株式会社 Exposure equipment
JP4799172B2 (en) * 2005-12-27 2011-10-26 株式会社日立ハイテクノロジーズ Exposure apparatus, exposure method, and manufacturing method of display panel substrate
WO2007145072A1 (en) * 2006-06-14 2007-12-21 Nsk Ltd. Supporting apparatus
JP4971730B2 (en) * 2006-09-06 2012-07-11 積水化学工業株式会社 Plasma surface treatment equipment
KR20080026499A (en) * 2006-09-20 2008-03-25 캐논 가부시끼가이샤 Board Holding Device
JP2008103703A (en) * 2006-09-20 2008-05-01 Canon Inc Substrate holding apparatus, exposure apparatus including the substrate holding apparatus, and device manufacturing method
JP5145524B2 (en) * 2007-10-25 2013-02-20 株式会社ブイ・テクノロジー Exposure equipment

Also Published As

Publication number Publication date
CN102375346A (en) 2012-03-14
JP2012038874A (en) 2012-02-23
KR20120013908A (en) 2012-02-15

Similar Documents

Publication Publication Date Title
KR102651554B1 (en) Bonding apparatus, bonding system, bonding method and computer storage medium
US8899289B2 (en) Joint method, joint apparatus and joint system
US8138456B2 (en) Heat processing method, computer-readable storage medium, and heat processing apparatus
US20230026661A1 (en) Bonding apparatus, bonding system, bonding method, and recording medium
US8822307B2 (en) Semiconductor manufacturing apparatus and semiconductor manufacturing method
TW201219989A (en) for installing a mechanism in the apparatus to cause the substrate to float and maintain the substrate in a non-contact manner so that there will be no exposure problem caused by the substrate floating
KR102073996B1 (en) Joining device, joining system, joining method and computer storage medium
US20130062013A1 (en) Joint apparatus, joint system, and joint method
KR20140133416A (en) Peeling device, peeling system, peeling method, and computer recording medium
JP5540533B2 (en) Manufacturing apparatus for manufacturing semiconductor device, substrate bonding method, and manufacturing method for manufacturing semiconductor device
US20120152136A1 (en) Imprint method, computer storage medium and imprint apparatus
CN110385527B (en) Apparatus for manufacturing frame-integrated mask
JP5781988B2 (en) Joining apparatus, joining system, joining method, program, and computer storage medium
CN111230295B (en) Apparatus for manufacturing frame-integrated mask
JP2024177380A (en) Bonding device, bonding system, bonding method, program, and computer storage medium
JP5797167B2 (en) Joining apparatus, joining system, joining method, program, and computer storage medium
TW202044334A (en) Layered product forming device and layered product forming method
TW201209882A (en) Imprinting system, imprinting method, and computer storage medium
JP5899153B2 (en) Peeling apparatus, peeling system, peeling method, program, and computer storage medium
JP5559736B2 (en) Substrate heating apparatus, coating and developing apparatus including the same, and substrate heating method
JP2014060381A (en) Thermal treatment apparatus, peeling system, thermal treatment method, program and computer storage medium
JP2014044974A (en) Exfoliation device, exfoliation system, exfoliation method, program, and computer storage medium
JP5869960B2 (en) Joining system, joining method, program, and computer storage medium
JP2013120903A (en) Peeling device, peeling system, peeling method, program, and computer storage medium
JP5773940B2 (en) Pattern forming apparatus and pattern forming method