TW201218416A - Printable composition of a liquid or gel suspension of diodes - Google Patents

Abstract

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. In other exemplary embodiments a second solvent is also included, and the composition has a viscosity substantially between about 100 cps and about 25, 000 cps at about 25 DEG C. In an exemplary embodiment, a composition comprises: a plurality of diodes or other two-terminal integrated circuits; one or more solvents comprising about 15% to 99.9% of any of N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 1-methoxy-2-propanol, N-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; a viscosity modifier comprising about 0.10% to 2.5% methoxy propyl methylcellulose resin or hydroxy propyl methylcellulose resin or mixtures thereof; and about 0.01% to 2.5% of a plurality of substantially optically transparent and chemically inert particles having a range of sizes between about 10 to about 50 microns.

Description

201218416 VI. Invention Description: [Copyright Notice and Permit] One of the patent documents reveals that the content contains copyrighted material. The copyright owner has no objection to the facsimile reproduction of the patent document or the disclosure of the patent in the Patent and Trademark Office patent file or record, but retains all copyrights in all other cases. The following statement shall apply to this document 'Information and Content as described below' and its schema: Copyright © 2010-201 1, NthDegree Technologies Worldwide. [Cross-Reply Application] This application is a US Provisional Patent Application No. 6 1 entitled "printable Composition 〇fa Liquid 〇r Gel Suspension of Diodes" filed by the inventor of William Johnstone Ray et al. on September 1, 2001. &lt Efforts and claims for all common disclosed subject matter. This application was filed by the inventor of William Johnstone Ray on September 1, 2002. "Light Emitting, Photovoltaic and Other

The U.S. Provisional Patent Application Serial No. 61/379,284, the disclosure of which is incorporated herein by reference in its entirety in its entirety in its entirety in The full validity of the text is generally set forth herein and claims priority to all commonly disclosed subject matter. 201218416 This application was filed on September 3, 2010 by the inventor of William Johnstone Ray and entitled "printable c〇mp〇siti〇n 〇f & Liquid w

In the US Provisional Patent of Gel Suspension of Diodes and Method of Making Same, the conversion of claim 61/379, 83G is claimed and its priority is granted, and the patent application is co-delivered with this application, and the entire contents thereof are The citations are hereby incorporated by reference in their entirety to the extent of the disclosure of the entire disclosure of the disclosure of the disclosure of the disclosure of the entire disclosure. This application was filed on September 3, 2010 by the inventor of William Johnstone Ray and entitled "LightEmitting, ph〇t〇v〇ltaicand〇ther

The U.S. Provisional Patent Application Serial No. 6 PCT/379, the entire disclosure of which is hereby incorporated by reference in its entirety, the entire entire content of The claims have the same full validity as the full text of the invention as set forth herein, and claim the claims. This March case is a part of the continuation of the US Patent Application No. 11/756,616, filed by May 17, 2007, by the inventor of William Johnstone Ray, entitled "RMeth〇d〇fManufacturingAddressable and Static Electronic Dispiays" And claiming its priority, the patent application is hereby incorporated by reference in its entirety, the entire content of which is hereby incorporated by reference in its entirety herein The subject matter claims priority. This application was filed by the inventor of William johnst〇ne Ray and the inventor on November 22, 2009. “Meth〇d 〇f 201218416

Addressable and Static Electronic Displays, Power

Part of the U.S. Patent Application Serial No. 12/601,268, the entire disclosure of which is incorporated herein by reference in its entirety, the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire content The title of the application is "Method of

Part of the U.S. Patent Application Serial No. 11/756,616, the entire disclosure of which is assigned to the benefit of the disclosure of the disclosure of "Method of Manufacturing Addressable and Static Electronic Displays, Power

The international application PCT/US2008/65237 of the Generating and Other Electronic Apparatus follows the US National Phase Application of 35 USC Section 371 and claims its priority. The international application PCT/US2008/65237 claims May 31, 2007. Priority to U.S. Patent Application Serial No. 1 1/756, 616, the entire disclosure of which is incorporated herein in The same full effect is claimed and priority is claimed for all commonly disclosed subject matter. This application is also filed by the inventor of William Johnstone Ray et al. on May 31, 2011, entitled r Addressable 〇r.

Part of the U.S. Patent Application Serial No. 13/149,681, the entire disclosure of which is hereby incorporated by reference in its entirety, the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of It was issued on July 5, 2011 as US 201218416 " Patent No. US 7,972,031 B2 entitled "Addressable 〇r Static

</ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 'There is a claim that is the same as the full validity of the text as set forth herein and claims the subject matter of all common disclosures. This application is

U.S. Patent Application Serial No. 12/601,271, entitled "Addressable or Static Light Emitting, Power Generating or Other Electronic Apparatus", filed on November 22, 2009, by the s. Its priority, US: National Patent Application No. 12/601,271, was filed on May 31, 2007 by Wmiam Johnstone Ray and other inventors entitled "Addressabie 〇r

U.S. Patent Application Serial No. 1 1/756,619, the entire disclosure of which is incorporated herein by reference in its entirety in its entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire content The international application PCT/US2008/65230 of the Static Light Emitting, Power Generating or Other Electronic Apparatus pursuant to the US National Phase Application of Section 35 of the 35 U.SC and claiming its priority, international application pct/US2〇〇8/ 6523() claims the priority of U.S. Patent Application Serial No. 11/756,619, filed on May 31, the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire The claims have the same full validity as the full text of the invention as set forth herein, and claim the claims. 201218416 This application is also related to the following patent applications that are applied at the same time. (4) The application is jointly transferred with this application, and the entire contents thereof are incorporated herein by reference. The same full effect and claim for all common disclosure objects: (1) Mark D. Lowenthai and other inventors applied for the title of "Light Emitting, Power ~ Coffee (4) 〇r ❿ to cut ^ -- --#; (2) Mark D. 曰Application titled "Method

U.S. Patent Application No. 2005, the entire disclosure of U.S. Patent Application Serial No. 5, the entire entire entire entire entire entire entire entire entire entire entire entire

The inventor of Mark D. Lowenthal and the applicant applied for the "Method of Manufacturing a Light Emitting, Power" on August 31, 2011.

Generating or 0ther Eiectronic Apparatus, US Patent Application No. -------, (4) Mark D. Lowenthal et al., invented on August 31, 2011, entitled "Di〇de For a Printable Composition, US Patent Application No. ________; (5) Mark D. Lowenthal et al., filed on August 31, 2011, entitled "Diode For a

Printable Composition, US Patent No. ________; and (6) Mark D. Lowenthal et al., entitled “Methods, Apparatus and Printable Composition of a Liquid or Gel Suspension”, dated August 31, 2011 U.S. Patent Application No. _______ of the Two-Terminal Integrated Circuits. TECHNICAL FIELD OF THE INVENTION The present invention relates generally to luminescence and optoelectronic technology, and more particularly to luminescent or photodiode or other two-terminal integrated circuits suspended in a liquid or colloid and capable of being printed, and for producing luminescence A method in which a photovoltaic or other diode or two-terminal integrated circuit is suspended in a liquid or colloidal composition. [Prior Art] Lighting devices having light-emitting diodes ("LEDs") typically require the use of integrated circuit processing steps to form LEDs on a semiconductor wafer. The resulting LED is substantially planar and relatively large, on the order of 200 microns or more. Each such led is a two-terminal device, typically having two metal ends on the same side of the LED to provide ohmic contact to the p-type and n-type portions of the LED. The (iv) circle is then usually divided into (four) (four) via a mechanical process such as sawing. (d) Place individual (four) in the reflective housing: and individually attach the wiring to each of the two metal ends of the LED. Time-consuming, labor intensive, and expensive, making ED-based lighting devices too expensive for eve-time consumer applications. It is also common to use a two-component enthalpy (such as a photovoltaic panel) to make the diode. Then package... The optoelectronic panel is formed on the substrate. This process is also time consuming, labor = round or other substrates to form optoelectronics has been shipped; = the government is encouraged to use it too widely. The novel two-two attempts to form an organic molecule functionalized ruthenium capping for luminescence or energy generation purposes: quantum dots have been proposed which can be printed in the organic resin and solvent in 201218416 to form a pattern, and then The light is emitted when the pattern is pumped by the second light. Various methods of forming devices have also been performed using semiconductor nanoparticles, such as particles in the range of from about 1. Onm to about 100 nm (tenths of microns). Another method has utilized a large amount of tantalum powder dispersed in a solvent-adhesive carrier, wherein the resulting tantalum powder colloidal suspension is used to form the active layer in the printed circuit. Another different approach has used an extremely flat AlInGaPLED structure formed on a GaAs wafer, with each LED having a detached photoresist anchor to each of two adjacent LEDs on the wafer, and then picking and placing each LED To form the resulting device. Other approaches have used the "lock and key" fluid self-assembly, in which the trapezoidal diode is placed in a solvent, which is then poured into a trap to trap and hold the trapezoidal diode in place. The position of the matching ladder hole on the substrate. However, the trapezoidal diode in the solvent is not suspended and dispersed in the solution. Conversely, trapezoidal diodes quickly settle into mutually adhered diode shirts that cannot be suspended or dispersed in solvent, and require active sound processing or (4) before copying. The trapezoidal diode of (d) cannot be used as a diode-based ink capable of being packaged or used as an ink, and is further not used in the printing process. These methods utilize a true dispersion and suspension in a liquid (tetra) bulk medium such as a 2-water integrated body of water and/or a semiconductor liquid or colloid, wherein the two-terminal integrated circuit is suspended. Particles, in which the semiconductor device is completed and capable of functioning, and the liquid or colloid containing the two-terminal integrated circuit or other semiconductor component can be formed into a device or system in a non-ambient atmospheric air environment using a printing process. 10 201218416, these are based on two responsibilities and cannot be commercialized. The recent developments in LED-based devices and optoelectronic poles are still too complex and feasible. Therefore, there is still a need for illuminating and/or optoelectronic devices that are designed to be less costly in terms of incorporated components and ease of manufacture. There is still a need to fabricate such illuminating or optoelectronic devices using lower cost and more robust processes, thereby producing a wide range of illuminating devices and photovoltaic panels that are commercially acceptable and commercially acceptable. Thus, a liquid or colloidal suspension of a diode or other two-terminal integrated circuit capable of being printed to form a completed LED-based device and optoelectronic device, forming such LED-based devices and optoelectronic devices The printing method and the resulting printed LED-based devices and optoelectronic devices still have various needs. SUMMARY OF THE INVENTION Exemplary embodiments provide a "diode ink" that is a liquid or colloidal suspension and dispersion that can be printed, for example, via a diode or other two-terminal integrated circuit printed by screen printing or fast-drying printing. liquid. As described in more detail below, the diode itself is a fully formed semiconductor device prior to inclusion in the diode ink composition that can function to illuminate (when embodied as an LED) or to be exposed to light upon energization Power is supplied when the light source is used (when embodied as a photodiode). The exemplary method also includes a method of making a diode ink as discussed in more detail below, which disperses and suspends a plurality of diodes in a solvent and a viscous resin or polymer mixture, and can print the diode Ink to manufacture LED-based devices and optoelectronic devices. Exemplary devices and systems formed by printing such a diode ink are also disclosed. 201218416. It is described that the inner valley is concentrated on the polar body as a type of two-terminal integrated circuit. The skilled person should understand that 彳 is equivalently replaced with other types of semiconductor devices to form a more widely called "semiconductor device ink". All such variations are considered equivalent and are within the scope of the invention. Any reference to "diode" in this document should be understood to mean and include any two-terminal integrated circuit of any kind, such as resistors, inductors, =, RFID circuits, sensors, piezoelectric devices. Etc., and any other integrated circuit that can be used with two 4 or electrodes. - An exemplary embodiment provides a composition comprising #: a plurality of polar bodies; a first solvent; alpha and a viscosity modifier. In an exemplary embodiment, 'the first solvent comprises at least one solvent selected from the group consisting of: water; alcohols such as methanol, ethanol, n-propanol... alcohol (isopropanol), b-methoxy-2 -propanol), - (including h butanol, 2-butanol (isobutyl, 2-nonanol, 3-side, octanol, n-octanol (10) diol di-long: octanol), tetrahydrofurfuryl alcohol, ring Hexanol, rosin alcohol; shout, such as methyl: base, acetamidine, ethyl propyl sulfonate and poly ~, such as ethyl acetate, monomethyl methacrylate, propylene glycol monoacetic acid, azelaic acid Methyl vinegar, butyl: acid dimethyl brewing, acetic acid glycerin cool; diol, such as ethylene glycol, diethylene glycol, 1 ethylene glycol, propylene glycol, dipropylene glycol, glycol diol, glycol acetate acetate; Stuffed, such as propylene carbonate; glycerin, such as glycerin; acetonitrile, tetrahydrofuran (THF), dimethyl chlorpyrifos / methane carbamide (DMF), N-mercapto decylamine F),曱亚飒 (DMS0); and its present compound. The first solvent may be, for example, about 0.3% by weight to 5% by weight or 6% by weight. The amount exists. 12 201218416 In various exemplary embodiments, each of the plurality of diodes has a diameter between about .20 microns and 30 microns and a height between about 5 microns and 15 microns. Or having a diameter between about 1 〇 micron and micrometer and a height between about 5 micrometers and 25 micrometers; or having a width and length of between about 10 micrometers and 50 micrometers each and between A height of between about 5 microns and 25 microns; or a width and length of between about 2 〇 small to 300 microns and a height between about $ microns and 15 microns. The plurality of diodes may be, for example, a light emitting diode or a photodiode. The exemplary composition may further comprise a plurality of substantially optically transparent and chemically inert particles having a size ranging between about 10 microns and about 5 microns and between about 〇.% by weight and 2.5% by weight. The quantity exists. Another exemplary composition can further comprise a plurality of substantially optically transparent and chemically inert particles having a size ranging between about 10 microns and about 30 microns and having a weight of about 〇·1. It is present in an amount of up to 2.5% by weight. In an exemplary embodiment, the viscosity modifier comprises at least one viscosity modifier selected from the group consisting of: a sputum, such as a lithium bentonite clay, a garamite clay, an organically modified clay; Such as guar gum, Sanxian gum; cellulose and modified cellulose, such as W-based ketone, methyl fiber, ethyl-based, propyl-mercapto cellulose, methoxy cellulose, Methoxymethyl cellulose, methoxy propyl methyl ketone, (tetra) methyl cellulose, methyl cellulose, ethyl cellulose, ethyl erythr cellulose, cellulose ether, cellulose Ethylene, polyglucosamine; polymers, such as acrylic acid and (meth) acrylate vinegar polymerization 201218416 and copolymers; glycols such as ethylene glycol, diethylene glycol, polyethylene glycol, Propylene glycol, di-diol, glycol, glycol ether acetate; aerosolized cerium oxide, cerium oxide powder; modified urea; and mixtures thereof. Viscosity regulator &lt;for example, about 0. 30% by weight to 5% by weight or about 〇. It is present in an amount of from 0% by weight to 3% by weight. The composition further comprises a second solvent different from the first solvent. The &gt; lacquer is present in an amount of, for example, from about 0.1% by weight to 60% by weight. In a specific example, the first solvent comprises n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, dioxetyl-2-propanol, 1-methyl indole, ethanol, tetrahydrofurfuryl alcohol or Cyclohexanol, or a mixture thereof, and is present in an amount of from about 5% by weight to 50% by weight; the viscosity modifier comprises a decyloxypropylmethylcellulose resin or a hydroxypropylmethylcellulose resin or a mixture thereof, and With about 0. 10% by weight to 5. The amount of 0% by weight is present; and the second solvent comprises n-propyl sulphide, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 1-decyloxy-2-propyl end, 1-octyl alcohol, ethanol, tetrahydrofurfuryl alcohol Or cyclohexanol, or a mixture thereof, and at about 0. It is present in an amount of from 3 to 50% by weight. In another illustrative embodiment, 'the first solvent comprises n-propanol, isopropyl end, dipropylene glycol, monoethyl alcohol, propylene glycol, 1-methoxy-2-propanol, propylene alcohol, ethanol, tetrahydrofurfuryl alcohol Or cyclohexanol, or a mixture thereof, and is present in an amount of from about 5 f to about 30% by weight; the viscosity modifier comprises methoxypropyl f-based cellulose resin or hydroxypropyl methylcellulose resin or a mixture thereof, and about 1. 0% by weight to 3. 0 weight. The amount of /〇 is present; and the second solvent comprises n-dioxime, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, κ alkoxypropanoid, 1-octanol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol , or a mixture thereof, and 14 201218416 and wherein the composition thereof is from about 2% by weight to about 8. The amount of 0% by weight of the remainder is further contained in water. In another illustrative embodiment, "alcohol: dipropylene glycol, diethylene glycol, propylene glycol, 1-methoxy-2-propanol, -octanol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol, or a mixture thereof, And is present in an amount of from about 4% by weight to 60% by weight; the mold occupancy modifier comprises methoxypropylmethylcellulose resin or propyl fluorenyl cellulose resin or a mixture thereof, and is about 0. 10% by weight to 1> 5% by weight; and the second solvent comprises n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 丨_曱oxy I propanol, 丨 octanol, Ethanol, tetrahydrofurfuryl alcohol or cyclohexanol, or a mixture thereof, and is present in an amount of from about 40% to about 60% by weight. An exemplary method of preparing a composition can include: mixing a plurality of diodes with a first solvent; adding a mixture of the first solvent and the plurality of diodes to the viscosity modifier; adding a second solvent; and in an air atmosphere The plurality of monopoles, the first solvent, the second solvent, and the viscosity modifier are mixed for about 25 to 30 minutes. The exemplary method can further include the step of releasing a plurality of diodes from the wafer and the step of releasing a plurality of diodes from the wafer including, for example, etching the back side of the wafer 'grinding and polishing the back side of the wafer, or Shot peeling. In various exemplary embodiments, the composition has a viscosity of between about 50 cps and about 25,000 cps at about 25 〇c, or substantially about 1 在 at about 25 °c. a viscosity between cps and about 25,000 cps, or a viscosity of substantially between about 1 at about 25 ° C, between 〇〇〇cps and about 10,000 cps' or substantially at about 25 ° C A viscosity of about 1 〇, 〇〇〇cps and about 25, 〇00 cps. 15 201218416 In various exemplary embodiments, each of the plurality of diodes may comprise GaN and wherein the plurality of - woods are substantially hexagonal, square, = (di) or super-circular of each of the diodes. In an exemplary and bulk/rectangular dome, star, and eight body lean, the illuminating or light absorbing regions of each of the plurality of diodes. m has a kneading texture selected from the group consisting of a plurality of rings, a plurality of table row stripes, a star pattern, and a mixture thereof... a curved edge (four), a plurality of flat examples, and a plurality of diode poles On the first side of the diode, there is a second example in which the first metal is in the upper side of the diode (the back side), and each of the plurality of diodes has a specific The diameter between two micrometers and between 5 micrometers and ΐ5 micrometers is not in the plural diodes - the question is also a mother... The first side has a plurality of first-gold and is in the first - There is a second metal terminal on the side, and the contact between the first sub-contact and the plurality of first metal ends and the end material E r is less than 5 micrometers. In an exemplary concrete example ... terminal in the long time. „ ^ I—the height of each of the metal-metal terminals is about 〇5 μm 1 and the height of the second metal terminal is between m pa and Hanmu to 8 micro ha + a. In an exemplary embodiment, a plurality of dipoles have a direct gain between about 微米) microns and 50 microns and a height between = 25 microns, and the 'input of the plurality of diodes - having a plurality of first metal terminals on the side and on the first side: the body is at the metal terminal, and the contact of the second metal terminal is spaced apart from the junction of the second metal: 16:201218416 1 micrometer to 7 micrometers. In another exemplary embodiment, each of the plurality of diodes has at least one metal via structure on at least one P+ or n+ type on the first side of the diode The GaN layer extends between the second side (back side) of the diode. The metal via structure includes, for example, a central via, a peripheral via, or a surrounding via. In various exemplary embodiments, any of the plurality of individual sizes are smaller than About 3 microns. In another illustrative embodiment, the 'diode has between about 20 micrometers. a diameter between 30 microns and a height between about 5 microns and 丨 5 microns; or between about 1 〇 microns and 50 microns and between about 5 microns and 25 microns Height; or substantially hexagonal in the lateral direction, having a relative face-to-face diameter between about 1 〇 micrometer and micrometer, and a height between about 5 micrometers to micrometer; or substantially laterally a hexagonal shape having a relative face-to-face diameter between about 20 microns and 30 microns, and a height between about 5 micrometers and 15 micrometers; or each having a thickness of between about 5 micrometers and 50 micrometers Width and length between micrometers and a height between about 5 micrometers to &amp;micrometers; or having a width and length of between about 2 micrometers and micrometers, and between about 5 micrometers and 15 micrometers. In each exemplary embodiment, the height of the sides of the plurality of diodes is less than about 10 microns. In another exemplary embodiment, you are in a plurality of diodes. The height of the sides of each of the diodes is between about micrometers and 6 micrometers. In an exemplary embodiment, the sides of each of the plurality of polar bodies are substantially s-shaped and terminate at a bending point: 17 201218416 In various exemplary embodiments, the viscosity modifier further comprises a viscosity adjusting agent. The viscosity modifier can form a polymer or resin mesh around the periphery of each of the plurality of diodes when dried or cured: the composition. The composition can be visually opaque, for example, when wet. The contact angle of the substantially optically transparent composition may be greater than about 25 degrees or greater than about 40 degrees when dried or cured. The relative evaporation rate of the composition may be less than i, wherein the evaporation rate is relative to the acetic acid brewing, The evaporation rate of the latter may include the printing of the composition on the substrate or on the first conductor coupled to the substrate. In an exemplary embodiment, each of the plurality of diodes includes at least one inorganic semiconductor selected from the group consisting of sand, SiC, gallium nitride (GaN), Gap, ΙηΑΐ(^ρ, ΐηΑΐ(^, A1InGaAs, InGaNAs, and A1InGASb. In another exemplary embodiment, each of the plurality of diodes includes at least one organic semiconductor selected from the group consisting of: π A total of polymers, poly(b), polybido), poly(thiophene), polyaniline, polythiophene, poly(p-phenylene sulfide), poly(p-phenylene) (PPV) &amp;amp PPV derivatives, poly(3 alkyl-based α-sentene), poly-n-poly-cards, sittings, polyglycosides, polyazide, poly(phenylene), polyaniline, polyaniline derivatives, polythiophene, Polythiophene derivatives, polypyrroles, polypyrrole derivatives, polybenzothiophenes, polybenzothiophene derivatives, polyparaphenylenes, polyparaphenylene derivatives, polyacetylenes, polyacetylene derivatives, polydiacetylenes , poly-acetylene derivative, poly-p-phenylene vinyl, poly-p-phenylene vinyl derivative , polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (ΡΙΤΝ), heteroaryl groups are thiophene, furan or 18 201218416 ° ratio of poly(arylene) vinyl (ParV), polyphenylene sulfide (PPS), P〇lyperinaphthalene (PPN), polyphthalocyanine (PPhc), and derivatives thereof, copolymers thereof, and mixtures thereof. Another illustrative embodiment provides a composition comprising: a plurality of a second solvent; a first solvent; and a viscosity modifier; wherein the composition has a viscosity of from about 1 〇〇 cps to about 25,000 cps at about 25 ° C. Another exemplary embodiment provides a composition. The method comprises: a plurality of diodes, each of the plurality of diodes having a size of less than about 5 μm of the first solvent; a second solvent different from the first solvent; and a viscosity modifier wherein the composition Another exemplary embodiment provides a composition having a viscosity of from about 50 cps to about 25,000 cpse at about 25 t: comprising a plurality of diodes of any size less than about 50 microns; and a viscosity modifier to Make up At about 25. The viscosity of the underlying layer is substantially between about 1 〇〇 cps and about 20'000 cps. Another illustrative embodiment provides a composition comprising: a plurality of diodes; a first solvent of the following group: n-propanol, isopropanol, dipropylene glycol, decyl glycol, propylene glycol, H-mercaptopropanol, methanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; selected from the group consisting of a viscosity modifier of the group consisting of: methoxypropylmethylcellulose resin, (iv)-based f-based cellulose resin and mixtures thereof; and a second solvent different from the first solvent, the (four) two solvent is selected from the group consisting of : n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, siloxane: isopropanol, i-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof. It comprises: a plurality of other illustrative embodiments providing a device 19 201218416 diode; at least a trace amount of a first solvent; and a polymer or resin film at least partially surrounding each of the plurality of diodes. In an exemplary embodiment, the 'polymer or resin film comprises a methylcellulose resin having a thickness of between about 10 nm and 300 nm. In another exemplary embodiment, the polymer or resin film comprises methoxypropylmethylcellulose resin or propylmethylcellulose resin or a mixture thereof. The apparatus can further comprise at least a trace amount of a second solvent different from the first solvent. In an exemplary embodiment, the polymer or resin film comprises a cured, dried or polymerized viscosity modifier selected from the group consisting of: point clay, such as lithium bentonite clay, garamite clay , organically modified clay; sugar and polysaccharides, such as guar gum, Sanxian gum; _ and modified cellulose, such as hydroxymethyl cellulose, methyl cellulose, ethyl ketal methyl cellulose, f oxycellulose, methoxymethyl fiber: oxypropyl methylcellulose, hydroxypropyl methylcellulose, carboxy &quot; styrene without ethylcellulose, ethyl ethylcellulose , cellulose scales, slats, polyglucosamine; polymers, polymers and copolymers; glycols, such as ethylene glycol, dimerized ethylene glycol, propylene glycol, dipropylene glycol, smoked belly _ &amp; i - private acetic acid ester; buried in the form of cerium oxide, dioxin, dioxin, and other mixtures. The item·step contains a plurality of particles of the essence h# and the inertia of the Thai, and the plurality of particles will be considered to be transparent on the stomach, and the inert particles in the solution are between about 1 〇, , and the chemically inert particles.  'Micron with about 50 micro $ η.  The # + s compound or the resin film is further in between at least the shirt, the H card, and the inert particles in the chemically inert particles. Μ上学透明透明 20 201218416 The exemplary device may further comprise a substrate; one or more - terminal first conductor; at least one coupled to one or more dielectric layers ... or a plurality of _ second terminals and light Connected to: Two conductors. In an exemplary embodiment, |, a diode of the plurality of diodes has a second terminal coupled to at least one of the at least one second conductor and coupled to at least one of the second conductors. In another exemplary embodiment, the first portion of the plurality of diodes has a first terminal coupled to the at least one first body and a second terminal coupled to the at least one of the second conductors The plurality of diodes have a second terminal coupled to the at least one second and the second terminal and the second terminal-conducting device can further include: pure to or multiple a conductor ^ ^ - or a plurality of interface circuits of the second conductor, the interface circuit is coupled to the power source, and is coupled to each of the exemplary embodiments, the one or more first conductors comprising: a first electrode, against the white Poor - j. ,, - each of the brothers - the bus bar and the first plurality of extension conductors extending from the first bus. And a first electrode comprising a second bus and a second plurality of elongated conductors extending from the second bus bar. The extension conductors may be misaligned with the first plurality of extension conductors. The conductor may be coupled to the second plurality of extension conductors. In various exemplary and intimate embodiments, the device is foldable and bendable. The gastric device can be substantially flat and have a total thickness of less than about 3 mm. The device can be cut with a die and folded into a standard #山,&gt; shape. The plurality of diodes of the device may have an average surface area concentration of from about 25 to 50,000 diodes per square 8.8 mil. In various illustrative embodiments, the representation does not include a heat sink or heat sink assembly. 21 201218416 In another illustrative embodiment, a device includes: a substrate; a plurality of diodes, each of the plurality of diodes having a first terminal and a second dipole, wherein the plurality of diodes Any of the dimensions of each of the diodes is less than about π microns 'substantially surrounding the film of each of the plurality of diodes, the film is έ έ or 树 曰 and the thickness is between about 丨〇 to Between 3 〇〇; one or more (four) to the first conductor of the plurality of first terminals; the handle is connected to the first dielectric layer of the one or more first conductors; and/or the plurality of faces are connected to a second conductor of a plurality of second terminals. In another exemplary embodiment, the apparatus includes: a substrate; a first conductor; a dielectric layer coupled to the one or more first conductors; or a plurality of second conductors; a plurality of diodes, the plurality Two poles = what size is less than about 5. Microcoming, the first part of the plurality of = = to the biasing surface is connected to - or a plurality of first conductors and is connected to - or multi-bias: the body ' and at least one of the plurality of diodes With a reverse conductor 疋. Coupling to one or more first conductors and coupled to - or a plurality of second: two and substantially surrounding a film of each of the plurality of diodes, cough, wide or resin and thickness Between about 10 to 3~. In each of the illustrative embodiments, the 'diode comprises: a diameter between ? and 3. a light-emitting or light-absorbing region I between the micrometers and having a height of between about 2, a terminal of the first material, and a region between the a-material and the first side opposite to the first side: 1/=1 micron to The 6 micron terminal, the second one of the first to the illuminating region, is between about 1 micrometer and 6 micrometers. In another exemplary embodiment, the diode comprises: a light-emitting or light absorbing region that is between 22 and 20,184 microns and a height between about 1 and 7 microns; a first terminal coupled to the light emitting region on one side, the first terminal having a height between about 1 micrometer and 6 micrometers; and a first coupling to the light emitting region on a second side opposite the first side a second terminal having a height between about 丨 micrometers and 6 micrometers, wherein the diode is substantially hexagonal in a lateral direction and has an opposite face-to-face relationship of between about 1 〇 micrometer and 50 micrometers. Measured diameter and height between about $micrometer and 25 micrometers, and wherein the height of each side of the diode is less than about 1 micron, each side of the diode has a substantially s-bend and terminates in a bend point. In another illustrative embodiment, the diode comprises: a luminescent or light absorbing region having a diameter of from about 6 microns to 30 microns and a height of from about 1 micron to 7 microns; coupled to the illuminating region on the first side a terminal having a height of about 1 micrometer to 6 micrometers; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height of about 丄 micron to 6 microns; wherein the diodes have respective widths and lengths between about ι Å and 50 microns and a twist between about 5 microns and 2 microns, and wherein the sides of the diodes The height is less than about 丨〇 microns, and each side of the diode has a substantially s-shaped bend and terminates at a point of curvature. In various exemplary embodiments, the diode comprises: a luminescent or light absorbing region having a diameter of from about 6 microns to 30 microns and a height of from about 25 microns to 7 microns; coupled to the illuminating region on the first side a terminal having a height of about 3 micrometers to 6 micrometers; and a second terminal coupled to the light emitting region on a second side opposite to the first side, wherein the height of the second terminal is 23 201218416 3 micrometers to 6 micrometers; wherein the diodes have a width and length of 3 micrometers each and a length of between about 5 micrometers and 15 micrometers to a degree of less than about 1 micrometer. : The height between the sides has a substantially 8-shaped bend and terminates at the f-curve. /,, Dipole In another illustrative embodiment, the diode contains.  a plurality of first materials having a height of between about 20 micrometers and 30 micrometers and a height between halftones and a light-emitting or light-absorbing region; a plurality of first materials in the first-side upper door &quot;; a light-emitting region of less than 7 micrometers, plural The height of the first terminal ^ to the terminal is about 0. 5 micrometers to 2 micrometers; a first terminal connected to the mesa region of the light-emitting region, each of which is 1 micron to 8 micrometers. &amp; In another illustrative embodiment, the diode contains. The area of the illuminating or light absorbing region, the height of the mesa region being. :, 5: the mesa region is micron and has a diameter of about 6 micrometers to 22 micrometers; and the first plurality of first: first plurality of first terminals are connected to the first side door and connected to the light emitting region and the peripheral surface is connected to the mesa region The height of the terminal is about 〇m; and the mesa on the first side is connected to the illuminating area on the first side = from the second terminal, the height of the second terminal is 丨 micrometer to 8 micrometers: the lateral dimension of the polar body is about 1 〇 micron to 5. Micron and height is about; micrometer to 25 microns. 々』]: In another exemplary specific real money, the diode includes: a diameter of about 20 to 30 microns and a height of 2. a light-emitting or light-absorbing region of 5 micrometers to 7 micrometers; a plurality of first-terminals spaced apart on the first side and peripherally coupled to the light-emitting region, and the height of each of the _ terminals is about Q. 5 microns to 2 microns; and 24 201218416 a second terminal centrally coupled to the mesa region of the illumination region on the first side, the second terminal having a height of 3 microns i 6 microns; wherein the diode is laterally It is substantially hexagonal, having a diameter of about 2 〇 to 3 〇 microns and a height of between about 5 μm and i5 μm, wherein the height of each side of the diode is less than about 1 μm, and each of the diodes The sides have a substantially s-shaped bend and terminate at a point of curvature. In another illustrative embodiment, the diode comprises: a luminescent or light absorbing region having a mesa region having a height of from 5 microns to 2 microns and a diameter of from about 6 microns to 22 microns; on the first side a plurality of first terminals spaced apart from each other and coupled to the mesa region, wherein the height of each of the plurality of first terminals is about G. 5 micrometers to 2 micrometers; and a second terminal centrally coupled to the mesa region of the light-emitting region on the first side, the second terminal having a height of 1 micrometer to 8 micrometers. The second metal terminal has a contact, and the contact between the contact of the second terminal and the plurality of first metal terminals is spaced apart by about 1 micrometer to 7 micrometers in height; wherein the diode is substantially laterally The upper is hexagonal, having a diameter between about 1 〇 micrometer and 50 micrometers and a distance between about 5 micrometers and 25 micrometers, where the height of each side of the diode is less than about 15 micrometers. Each side of the diode has a substantially S-shaped bend and terminates at a point of curvature. An exemplary method of preparing a liquid or colloidal suspension for printing includes: adding a plurality of diodes to a first solvent in a viscosity modifier, and mixing a plurality of diodes, a first solvent, and viscosity adjustment The agent forms a liquid or colloidal suspension containing a plurality of diodes. In another exemplary embodiment, a method of preparing a printed diode liquid 25 201218416 or a colloidal suspension comprises: adding a second solvent to a plurality of diodes in a first solvent, the second solvent being different In the first solvent; adding a viscosity modifier to the plurality of diodes, the first solvent and the second solvent; adding a plurality of substantially chemically inert particles to the plurality of diodes, the first solvent, the first solvent And a viscosity modifier; and mixing a plurality of diodes, a first solvent, a second solvent, a viscosity modifier, and a plurality of substantially chemically inert particles until the viscosity measured at about 25 ° C is at least about 〇 〇 centipoise (cps) to form a liquid or colloidal suspension containing a plurality of diodes. In another specific embodiment, the method of preparing a liquid or colloidal suspension for printing comprises: adding a viscosity modifier to a plurality of diodes, a solvent, and a second solvent, second The solvent is different from the first solvent, wherein each of the plurality of diodes has a lateral dimension of about 1 〇 micrometer to 50 micrometers and a height of about 5 micrometers to a micrometer; a plurality of substantially chemically inert particles Adding to a plurality of diodes, a first solvent, a second solvent, and a viscosity modifier, wherein each of the plurality of substantially chemically inert particles has a size of from about 1 μm to about 7 μm; and mixing A plurality of diodes, a first solvent, a second solvent, a viscosity modifier, and a plurality of substantially chemically inert particles are up to about 25. The underarm measurement has a viscosity of at least about 1,000 centipoise (cps) to form a liquid or colloidal suspension comprising a plurality of diodes. In an exemplary embodiment, a method of fabricating an electronic device includes: depositing one or more first conductors; and depositing a plurality of diodes suspended in a mixture of the first solvent and the viscosity modifier. In another exemplary embodiment, the method comprises: depositing a suspended ocean # + -&amp; on the first side of the optical transmission 26 201218416 ' substrate on the first solvent and viscosity adjustment, the plural in the Japanese character a diode, a plurality of diodes ... having a plurality of first-end one-poles on the first side and on the first side h and the ancient, sub-, and plural dipoles The lateral dimension of each of the diodes at the second end is 50 micrometers and the height is 5 micro+ -, · force 10 micrometers. 25 micron; depositing a first conductor of a customer or a terminal, an eclipse/an eclipse coupled to the first, a dielectric layer coupled to at least one of the dielectric layers ''deposited' or: a first-lead and The M-conductor of the optically transmissive substrate; in another exemplary embodiment, the method comprises a = bulk layer. One or more first conductors are deposited on the side; the first of the soil bottoms. Suspended in the first solvent blood viscous sound i $ 夕固第-conductor deposits a mixture of heart illusion and viscosity modifier, in a plurality of diodes &gt; A ^ a plurality of diodes to each of the dioxin On the first side, and having a second terminal on the second side, a plurality of: the lateral dimension of the first terminal is about 10 micrometers... the respective diodes in the body are no micro to 5 micrometers and meters; a plurality of diodes and/or a plurality of first conductors, 4 to 25 micro dielectric layers; at dielectric &gt; ± ^, at least one of the deposition and deposition of the first phosphor layer. Transmissive twins a second conductor; in another exemplary embodiment, the group (four) circuit 'each of the two-terminal integrated circuits has a total of 4 products = both ends and less than about 75 microns; the first solvent; different two: Any two solvents of the bulk circuit; and a viscosity modifier; wherein the composition of the solvent is substantially from about 〜about 25 〇〇〇cps. In the viscous example, a plurality of two-terminal integrated circuits include a two-pole body and a light-emitting diode selected from the group consisting of a concrete integrated circuit: _炻驴1, lower, and a group. , Photodiode, Resistor, 27 201218416 Inductor 'Capacitor Integral Circuit. The RFID integrated circuit, the sensor integrated circuit, and the exemplary embodiment of the pressure embossing include: a two-end integrated circuit for incinerating, a long base in a plurality of two-terminal integrated circuits; any size of the complex # is less than about 75 micron; at least ^ two-end integrated body on the membrane surrounding each of the plurality of diodes, ::: capacity:; the essence of the vitamin resin Μ has a thickness of about Gnm to the core / membrane ^ Methyl fiber 5 if - a, a singular, one or more coupled A-conductors, coupled to - or a plurality of first conductor-dielectric layers; and n-th or more circuits In the specific example of reading a two-terminal integrated body, the composition comprises: a plurality of two-sea integrated circuits, each of the two-terminal integrated circuits in the plurality of two-terminal integrated circuits (4), the dimensions are less than about 75 micrometers; a solvent; a solvent other than the first solvent; a plurality of substantially chemically inert particles having a size ranging from about 10 micrometers to about 100 micrometers and from about 5% by weight to about 25 weight percent. And the amount of the viscosity modifier; wherein the composition has a viscosity of about 50 cps to about 25,000 cps under about. The invention will be readily apparent from the following detailed description of the invention and the appended claims. . The objects, features, and advantages of the present invention will become more apparent from the aspects of the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; And other types, examples, or variations of the selected component specific examples are identified in the various views with alphanumeric characters. The present invention is to be construed as being limited to the details of the embodiments of the invention. It is not intended to limit the invention to the particular embodiments disclosed. In this regard, it is to be understood that the present invention is not limited to the details of the application, the details of the components described in the drawings, or as described in the embodiments, Configuration. The method and apparatus in accordance with the present invention can be embodied in other specific embodiments and can be practiced and carried out in various ways. It is also to be understood that the phraseology and terminology used herein, and the s s Illustrative embodiments of the present invention provide diodes 1 , i〇〇a, _, _, 100D, faces, 100F, 1〇〇G, i〇〇h, 匪, _, 1 hidden, hidden (in Liquid and/or colloidal dispersions and suspensions, collectively referred to herein as "diodes", which can be printed and equivalently referred to herein as "diode inks" - should be understood "Diode ink" means and refers to a diode or other two-terminal integrated circuit (such as a liquid and/or colloidal suspension commercially available as an exemplary diode). As described more fully below, - pole 10 ( M00L itself is a fully formed semiconductor 11 piece before being included in the diode ink composition, which can be powered (4) to emit light (when embodied as an LED) or to provide power when exposed to a light source (in the embodiment) 29 201218416 is a photodiode) * The exemplary method of the present invention also includes a method of fabricating a diode ink, as discussed in more detail below, the diode ink dispersing and suspending a plurality of diodes 100-100L Solvent and viscous resin or polymer mixture, in which the diode 100-100L or other two The integrated circuit maintains dispersion and suspension for a longer period of time at room temperature (25t) or refrigerated conditions (5 it to 1 〇t), such as one or more months, for higher viscosity, colloidal compositions and This is especially true for freeze induced colloidal compositions, and the liquid or colloidal suspension can be printed to produce LED-based devices and optoelectronic devices. Although the description focuses on a diode 100-100L as a type of two-terminal integrated circuit. However, those skilled in the art will appreciate that they can be equivalently replaced with other types of semiconductor devices to form what is more commonly referred to as "semiconductor device inks" such as, but not limited to, any type. Transistor (Field Effect Transistor (FET), Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Junction Field Effect Transistor (JFET), Bipolar Junction Transistor (B JT ), etc.) (diac), triac, triac, controlled rectifier, etc. · Diode ink (or semiconductor device ink) can be deposited, printed or otherwise coated to form a more detailed description below Any of the various products discussed, such as apparatus 300, 300A, 300B, 300C, 300D, 700 '700A '700B, 720, 730, 740, 750, 760, 770 specific examples or systems 35〇, 3 75, 800 , 810, or may be deposited, printed or otherwise applied to any product of any kind or to form any product of any kind, including signs or markings for product packaging, such as consumer products, personal products, commercial products Industrial products, construction products, construction products, etc. 30 201218416 FIG. 1 is a perspective view illustrating a specific example of an exemplified first diode. 2 is a plan view (or top view) illustrating an exemplary first diode 1 〇〇 embodiment. Fig. 3 is a cross-sectional view (through the 1G·1G' plane of Fig. 2) illustrating an exemplary first diode. 4 is a perspective view illustrating a specific example of an exemplary first pole 100A. Figure 5 is a plan (or top view) illustrating an exemplary embodiment of an exemplary polar body 100A. Fig. 6 is a perspective view showing a specific example of the third polarized body i 〇〇 B. Fig. 7 is a plan view (or a plan view) showing an example of an example of an inelastic third diode 100B. To illustrate a perspective view of an exemplary fourth diode t 〇〇c embodiment. Figure 9 is a plan view (or a top view) illustrating an exemplary fourth diode 1c embodiment. Figure 10 is a cross-sectional view (through the 20-20' plane of Figures 5, 7, and 9) illustrating an exemplary second, third, and/or fourth diode 100A, 100B, 100C. Figure n is a perspective view illustrating an exemplary fifth and sixth diodes 〇〇D, 100E. Figure 12 is a plan view (or top view) illustrating an exemplary fifth and sixth diode 100D, 100E embodiment. Figure 13 is a cross-sectional view (through the 40-40, plane of Figure 12) illustrating an exemplary fifth diode 100D embodiment. Figure 14 is a cross-sectional view (through the 〇4〇, plane of Figure 12) illustrating an exemplary sixth diode 100E embodiment. Figure 15 is a perspective view illustrating an exemplary seventh diode body i 〇 OF embodiment. Fig. 16 is a plan view showing a specific example of an exemplary seventh diode 1 〇〇f. Figure 17 is a cross-sectional view (illustrated through the 42-42' plane of Figure 16) illustrating an exemplary seventh diode 1 〇op. Figure 18 is a perspective view illustrating an exemplary eighth eccentric body 100G embodiment. Figure 19 is a plan view (or top view) illustrating an exemplary eighth eccentric body 100G embodiment. Figure 2〇 31 201218416 A cross-sectional view of a specific example of an exemplary eighth diode 100G (through the plane 43-43 of Figure i9). Figure 21 is a perspective view illustrating a specific example of an exemplary twelfth polar body 1 〇〇 κ. Fig. 22 is a cross-sectional view showing a specific example of an exemplary twelfth polar body i 〇〇 κ (through the 47_47, plane of Fig. 21). Figure 23 is a perspective view illustrating an exemplary eleventh diode 1A. Figure Μ is a cross-sectional view showing an exemplary eleventh body of the eleventh body (through the "8, plane" of Figure 23. Ninth, twelfth and thirteenth body bribery, 1001 and 100J Cross-sectional views of specific examples are illustrated in Figures 44 and 66, respectively, as part of an illustration of an exemplary fabrication process. The figure is an exemplary second diode - a scanning electron micrograph of a specific example. Scanning electron micrographs of specific examples of second diodes. In perspective and plan view (or top view), 2、, 2, 4_9, η, 12, 15, 16'18, 19, 21, and 23 'Description of the external purification layer 135 is omitted to provide a view of other underlying layers and structures that would otherwise be covered by the passivation layer 135 (and therefore not visible). In Figures 3, 1 and 17, ' 2〇, 22' 24' 44, 5〇, 57, 62, 63 and 66 69 The passivation layer 135 is illustrated in the cross-sectional view, and those familiar with electronic technology should understand that the manufactured diode is a 〇〇-ship- Generally, at least one such passivation layer 135 will be included. In addition, referring to the figures up, 74, 76 85 and 871〇3, familiar with this item The drawings are also to be construed as illustrative and illustrative, and not to scale. - The following is a more detailed description of the 1st to thirteenth diodes. Specific examples 100-100L are mainly as follows The difference is: the shape, material, doping and other composition of the substrate 32 201218416 105 and the wafer 150, 150A can be used; the shape of the diode light-emitting area produced; the guide hole (13〇, m, 133, 134) , B6) Depth and position (such as shallow or "blind", deep or "through", : heart, surrounding and surrounding), ·. a first terminal 125 on the first side (top or front) or having a first terminal and a second terminal 125, 127; a metallization layer on the back side (second side) forming the first terminal 125 or the second terminal 127 The use and dimensions of (122); the shape, extent and location of other joint metals; and may vary in shape or position of other features, as described in more detail below. Exemplary Methods and Methods of Making Exemplary Diodes 1〇〇_1〇〇L Variations are also described below. One or more exemplary diodes 100 100L or NthDegree from Tempe, Arizona, USA

Available from and available to Technologies Worldwide. Referring to FIGS. 1 through 24, an exemplary diode 1〇〇_1〇〇L is formed using a substrate 1〇5, such as a heavily doped n+ type or p+ type substrate 1〇5, such as a heavily doped type or The p + type 矽 ' can be a Shi Xi wafer or can be a more complex substrate or wafer, such as including, but not limited to, a germanium substrate (1 〇 5) (soi), or sapphire (1) 〇 6) A gallium nitride (GaN) substrate 105 on the wafer 15 (described in u & 2G). Other types of substrates (and/or crystals having or having a substrate) may also be used equivalently, and may be discussed in greater detail below. Thus, reference to substrate ι 5 or i 〇 5A is to be broadly understood to also include any type of substrate, such as a type or P + type 矽, n+ type or p + type GaN, such as formed using a germanium wafer 15 . The n + type or p + type germanium substrate or the n + type or 33 201218416 P + type GaN fabricated on the sapphire wafer i 5a (described below with reference to Figures UJO and 38_5). In the specific examples illustrated in FIGS. 2A through 24, after the substrate is removed during fabrication, it can be ignored that the substrate 105, 105A (and buffer layer 145) remains (the composite GaN heterostructure remains in place, as described below). Discussed in detail), and for example, but not limited to, any of the substrates 1〇5, 105A can be used. The substrate 105 typically has a < 丨丨 or < 11 〇 > crystal structure or orientation when 矽 is embodied, although other crystal structures can be used equivalently. A buffer layer 145 (such as aluminum nitride or tantalum nitride), as the case may be, is typically fabricated on the germanium substrate 5 to facilitate subsequent fabrication of GaN layers having different lattice constants. On the buffer layer 145, a GaN layer is formed, for example, by epitaxial growth to form a composite GaN heterostructure. The GaN layer 1 丨〇, the lining well region 185, and the p + -type GaN layer 115 are generally described. In other embodiments, buffer layer 145 is not used or may not be used, such as when a composite GaN heterostructure (n+-type GaN layer 110, is fabricated on GaN substrate 1〇5 (or directly on sapphire (106) wafer 105A), The quantum well region 185 and the para-type GaN layer 115) are illustrated as more specific alternatives in Figures 15-17. Those skilled in the art should be aware that there may be multiple quantum wells (internal) and possibly multiple p+, n+, and other GaN layers containing multiple dopants, and there may be any of various dopants. a non-GaN layer to form a luminescent (or light absorbing) region 14 〇 'where the n + -type GaN layer 110 , the quantum well region 185 , and the p + -type GaN layer 115 are merely illustrative and provide only one or more pairs of luminescence (or The light-absorbing region 14 〇 of the composite GaN heterostructure or any other semiconductor structure includes twin or brief description. Those skilled in the art should also understand that, for example, for a P+ type germanium or GaN substrate 1Q5, the positions of the n+ type GaN layer 11 and the 34 201218416 P + type GaN layer 11 5 may be the same or may be the same. Effectively reversed, and other compositions and materials can be used, β々, 4 &amp; illuminate (or light absorbing) regions 140 (the others are described in the lower hereinafter) and all such changes are in this The I&amp; can be used as a reference for GaN as an exemplary material for forming a luminescent or light absorbing region or a group of 140 different compounds, dopants and structures, but those skilled in the art should understand Any other suitable semiconductor material is equivalently used and is within the scope of the present invention. In addition, those skilled in the art should be aware that any reference to (10) should not be considered "pure"

GaN' is understood to mean and encompass all other compounds, dopants and layers that may be used to form luminescent or light absorbing regions 14 and/or to allow deposition of luminescent or light absorbing regions (10), including any intermediate non-layers. . It should also be said that although there are many diodes in the diodes (diodes 丨〇〇_丨〇〇L), the lithium and GaN may be or are selected semiconductors, but they can be used equivalently. Other inorganic or organic semiconductors are within the scope of the invention. Examples of inorganic semiconductors include (but are not limited to): Shi Xi, wrong and mixtures thereof; titanium dioxide, [oxidized stone, oxidation, tin oxide, oxidation, tin and mixtures thereof; a bovine conductor, which is a compound containing at least one divalent metal (zinc, cadmium, mercury, and lead) and at least one divalent nonmetal (oxygen, sulfur, selenium, and tellurium) such as oxidation #, cadmium selenide, cadmium sulfide, Mercury selenide and mixtures thereof - Group III-V semiconductors containing at least one trivalent metal (aluminum, gallium, indium and antimony) and at least one trivalent non-gold 4 (nitrogen, phosphorus, arsenic and antimony) Compounds such as gallium arsenide, indium phosphide, and mixtures thereof; and Group IV semiconductors include hydrogen terminated ruthenium, carbon, ruthenium, and tin, and combinations thereof. In addition to the GaN luminescence/light absorbing region 14 〇 (eg, GaN deposited on the substrate 1 〇 5 35 201218416 (such as n+ type or p+ type 矽) or deposited on the 矽 wafer 15 〇 or sapphire (106 ) wafer 150A ( In addition to the GaN heterostructure on the substrate, the plurality of diodes 100-100L may also comprise any type of semiconductor component, material or compound, such as 矽' 珅^« gallium (GaAs), gallium nitride (GaN), Or any inorganic or organic semiconductor material and in any form including, but not limited to, GaP, InA1GaP, InA1GaP, Α1Ιη (3_, (5) heart,

AlInGASb. In addition, the wafer used to fabricate the two-terminal integrated circuit may be of any type or type, such as, but not limited to, germanium, GaAs, GaN, sapphire, carbonized. The scope of the invention is therefore to be understood to cover any remote crystal or compound semiconductor on a semiconductor substrate, including but not limited to any (four) or optoelectronic semiconductor of any kind known or to be known in the art using semiconductor substrate fabrication.

In various exemplary embodiments, the n+ type or p+ type substrate 1〇5 conducts a current which, as illustrated, flows to the n+ type GaN layer again, and each of the illumination or light absorbing regions 140 is illustrated. Either of the layers can be equivalently inverted or differently ordered, such as reversing the position of the illustrated n+ and p+ GaN. The current path is also passed through a metal layer forming one or more vias (which can also be used to provide an extremely thin (about 25 angstroms) between the type or P+ type substrate 105' and the η31 layer U〇. An electrical bypass (electrical, bypass, bypass) of the buffer layer 145. Other types of vias 131-134 and 136 that provide other connections to the conductive layer are described below. One or more metal layers

12〇 (described as two (or more) separate deposited metal layers 120A and 1) (which can also be used to form vias (i3〇, (3), i32, (1), 134, 36 201218416 136)) And a p + -type GaN layer 115, a second other metal layer 12B (such as a mold metal for forming a "bump" or a protruding structure), and a first electrical terminal forming each of the diodes 100-100L ( Or contact ohmic contact of 1Z5 or the metal layers 120A, 12 of the second terminal 1 of 7. Other metal layers can also be used as discussed below. For the illustrated exemplary diode 丄〇〇, i 〇〇 A, 100B, l〇〇C specific examples, the electrical terminals 125 may be formed in the diodes 100, 100A, 100B, l〇〇C during fabrication. The only ohmic metal terminal for subsequent power (voltage) delivery (for LED applications) or reception (for optoelectronic applications), n+ or p + type substrate 1〇5 for providing diodes, 100A, The second electrical terminal of 100B, 100C for power delivery or reception. It should be noted that the electrical terminal 125 and the n+ type or p + type substrate 105 are on opposite sides of the diodes 100, 100A, 100B, 100C (ie, the top surface (first side) and the bottom surface (or back side, second side)) Up, not on the same side. As an alternative to the specific examples of the diodes 1, 100A, 100B, and 10C, and as illustrated for other exemplary diode embodiments, in the diode (eg, diode 100D, l) A second ohmic metal terminal 127, as the case may be, is formed on the second side (back side) of 〇〇F, 100G, 100J) using the metal layer 122. As an alternative to the specific example of the diode ιοοκ illustrated in FIGS. 21 and 22, the metal layer 22 is used to form the first ohmic metal terminal 125 on the second side (back side) of the diode 100K, and then flipped or Reverse the diode l〇〇K for use. As an alternative to the exemplary diodes 100L of Figures 23 and 24, the first terminal 125 and the second terminal 127 are all on the same first side (top surface) of the diode 100L. In particular, a tantalum nitride passivation layer 135 (or any other equivalent passivation layer) is used to achieve electrical insulation, environmental stability 37 201218416 and possibly other structural integrity. Without being separately described, as discussed below, a plurality of trenches 155 are formed along the sides of the diode 100-100L during fabrication to separate the diode 100-iooL from each other on the wafers 15A, 15A. (Single) and used to separate the diodes 1〇〇_1〇〇L from the rest of the wafers i50, 150A. 1-24 also illustrate various shapes of one or more luminescent (or light absorbing) regions 14 〇 (described as GaN heterostructures (n+ type germanium layer u〇, quantum well region ι85, and P+ GaN layer II5)) And form factor (f〇rm fact〇r) and some of the shapes and form factors of the various shapes and form factors of the substrate 105 and/or the composite GaN heterostructure. As also illustrated, although the exemplary diode 100-100L is substantially hexagonal in the xy plane (having a curved or meandering side 12 1 , concave or convex (or both, shaped into a more complicated $ Shapes) 'discussed in more detail below' to provide a larger device density for each of the radiant wafers, but other diode shapes and modalities are considered equivalent and within the scope of the claimed invention 'such as squares , round, oval, elliptical, rectangular, digonal, octagonal, ring, etc. As also illustrated in the illustrative embodiments, the hexagonal side surface 12 1 may also be slightly curved or arched, such as convex (Fig. 1, 2, 4, 5) or concave (Fig. 6-9), so as to When the wafer is released and suspended in a liquid, the 'diodes 100-100 L can avoid sticking or sticking to each other. In addition, for the manufacture of devices 300, 300A, 300B, 300C, 300D, 7A, 700A, 700B, 720, 730, 740, 750, 760, 770, the relatively small thickness of the diode 1 〇〇-100L is used. Individual dies (individual diodes 100-100L) are prevented from standing on their sides or side edges (121). As also illustrated in the illustrative embodiments, the hexagonal side surface 12 1 may also be slightly curved or 38 201218416 also shaped to protrude around the center or central portion of each side 121 and to be peripherally/laterally recessed to form a more A complex s-shaped shape (overlapping double "s" shape) produces a sharper or protruding apex 114 (Fig. 11 i 24) so that when released from the wafer and suspended in the liquid It is also possible to avoid standing or sticking to each other and pushing away from each other when rolling or moving relative to the other diode. - The variation of the polar body i00_丨00L from the flat surface pattern (i.e., the non-flat surface pattern) also helps to prevent the crystal grains from sticking to each other when suspended in a liquid or colloid. Again, for the devices 300, 3〇〇a, 300B, 300C, 300D, 7GG, 7GGA, 7GGB, 72G, 73G, 74G, 75G, 760, 770, a diode having a relatively small thickness or height is produced. _1〇〇L (or the light-emitting area of the diodes 1〇〇K and 100L) (compared to its lateral dimensions (diameter or width/length)) tends to prevent individual grains (individual diodes 丨〇〇_丨〇〇L) is erected on its side or side edge (121). Various shapes and form factors of the illuminating (or light absorbing) regions 14 〇 (the n + -type GaN layer 110 , the set well region 185 , and the p + -type GaN layer 115 ) are also illustrated, wherein FIGS. 1-3 illustrate substantially circular or a disk-shaped illuminating (or light absorbing) region 14 〇 (n+-type GaN layer 110, quantum well region 185, and p+-type GaN layer 115), and FIGS. 4 and 5 illustrate substantially circular (or super-annular) luminescence (or Light absorbing) region 140 (n+-type GaN layer 110, quantum well region 185, and p+-type GaN layer 11 5 ), wherein second metal layer 120B extends to the center of the super-annular body (and possibly provides a reflective surface). In FIGS. 6 and 7, the light-emitting (or light-absorbing) region HO (n+-type GaN layer u〇, quantum well region 185, and p +-type GaN layer 115) has a substantially circular inner (side) surface and a substantially leaf shape. The outer (side) surface' while in Figures 8 and 9, the illuminating (or light absorbing) region 140 (n+type 39 201218416)

The GaN layer 11 , the quantum well region 185 and the p + -type GaN layer 115 ) also have a substantially circular inner (side) surface, while the outer (side) surface is substantially star-shaped. In Figures 11-24, one or more of the illuminating (or light absorbing) regions ι4〇 have a substantially hexagonal (lateral) surface (which may or may not extend around the die) and may have (at least partially) substantial Upper or side inner (side) surface. In other illustrative embodiments not separately illustrated, there may be multiple illuminating (or light absorbing) regions 140 that may be continuous or spaced apart on the die. Various configurations having one or a plurality of illuminating (or light absorbing) regions 140 (n+-type GaN layer 110, quantum well region i85, and 卩+-type GaN layer 11 5 ) having a circular inner surface can be constructed to increase light output The potential for (for applications) and light absorption (for optoelectronic applications). As discussed in more detail below, the inner and/or outer surface of any of the n+ type GaN layer 11 or the p+ type GaN layer H5. may also have, for example, but is not limited to, various surface textures or surface geometries Either. In an exemplary embodiment, the first terminal 125 (or the second terminal 127 of the diode 1 〇〇 κ) includes one or more metal layers 120 Α, 120 Β and has a bump or protruding structure to make the diode One significant portion of 1〇〇1〇〇L is covered by one or more insulating or dielectric layers (in the first conductor .310 or 310A with n + type or p + type germanium substrate 1〇5 (or with metal) The second terminal formed by layer 122, or after making electrical contact with the second terminal formed by metal layer 128), is in contact with electrical terminal 125 for one or more other conductive layers, such as second conductor 32A discussed below. Provide adequate structure. In addition, the bump or the large structure of the terminal 125 may also affect the diode l〇〇_1〇〇L in the diode except for the curvature of the side surface 12 1 and the thickness of the side surface 12 1 . Ink internal rotation 40 201218416 and its subsequent orientation in the manufactured devices 300, 300A, 300B, 300C, 300D, 700, 700A, 7〇〇B, 720, 730, 740, 750, 760, 770 One of a plurality of factors of upper (forward bias) or bottom up (reverse bias). Referring to Figures 11-22, exemplary diodes 1〇〇d, 1〇〇e, 1〇〇F, i〇〇g, 1 00K illustrate several other and optionally features in various combinations. As illustrated, the periphery of the metal layer 120B, which is typically formed of a mold metal to form a bump or protrusion, is substantially elliptical (or oval) (and the hexagonal hexagon in Figure 21) rather than substantially Round, although other shapes and form factors of the terminal 125 are within the scope of the present invention. Additionally, the metal layer 120B forming the bump or protruding structure can have two or more elongated extensions 124 at the devices 300, 3A, 3B, 3〇〇c, 3〇〇d, 7〇〇, 7〇〇A, 700B, 720, 73 0, 740, 75 0, 760, 770 are used in manufacturing for several other purposes, such as to facilitate electrical contact with the second conductor 320 and to facilitate insulation. The electrolyte 315 (and/or the first conductor 310) flows away from the terminal 125 (metal layer 1 20B or metal 122). The elliptical form factor may also allow for additional illumination (or light absorption) or luminescence (or light absorption) along the long axis side self-luminous (or light absorbing) region 140 of the elliptical metal layer 12 〇B forming the bump or protrusion structure. Region 140 additionally illuminates (or absorbs light). For the selected specific example, the metal layer 12A which is also in ohmic contact with the p + -type GaN layer 115 and which may be deposited as a plurality of layers in a plurality of steps also has an elongated extension on the p + -type GaN layer 115, Illustrated in Figures 11, 12, 15, 16, 18, and 19 as curved metal contact extensions 126, which facilitate conducting current to the p + -type GaN layer 11 5 while allowing (rather than excessively repressing) illumination (or Light absorbing) region 41 201218416 The potential of the field 140 illuminating or light absorbing ^ can be equivalently used with a myriad of other shapes of metal contact extensions 126, such as grid patterns, other curved shapes, and the like. Although not separately illustrated, the extended metal contact extensions may be used in other specific examples illustrated in Figures 1-1 and 21-224. Other seed or reflective metal layers may also be used' as described in more detail below. 11-22 also illustrate that in the fabricated diodes 100, 100A, 100B, 100C extending through the buffer layer 145 and into the substrate 105, but not deeper into or through the substrate, as previously described. Peripheral (ie, eccentric) other types of via structures (131, 132, 133, 134, 136) other than shallow or "blind" vias 130. As illustrated in Figure 13 (and Figure 44 '66), the deeper "through" via 13 1 at the center (or at the center) extends completely through the substrate 1〇5 and is used to interface with the n+ GaN layer 11 A 1 ohm contact is formed and current is conducted (or otherwise formed into electrical contact) between the first side (back) metal layer 122 and the n+ type GaN layer 110. As illustrated in Figure 22, the center (or at the center) has a smaller or shallower "through" via 136 that extends completely through the composite GaN heterostructure (115, 185, 110) and is used with n+ GaN. Layer 11 〇 forms an ohmic contact and conducts (or otherwise forms electrical contact) between the second side (back) metal layer 122 and the n+ type GaN layer 110. As illustrated in Figure 14, a shallow or blind via 132 (also referred to as a "blind" via 132) at the center (or at the center) extends through the buffer layer 145 and into the substrate 1〇5, and is used to The n+ type GaN layer 110 forms an ohmic contact and conducts (or otherwise forms electrical contact) between the n+ type GaN layer 110 and the substrate 105. As shown in Figures 15-17 and 49-50, 'the surrounding is deeper or the through-hole 133 is along the side 121 (although it is covered by the blunt 42 201218416 匕 layer 135) since (4) layer m extends the money to the diode calendar The second side (back side), in this embodiment the diode body also includes a second side (back) metal layer 122, completely surrounding the side of the substrate iQ5, and it serves to form an ohmic contact with the n+ type GaN layer UG and Current is conducted (or otherwise formed into electrical contact) between the second side (back) metal layer m and the n+ type GaN@11. As shown in FIG. 18_2, the relatively deep "through" vias U4 extend completely through the substrate 105 and are used to form an ohmic contact with the n+ type GaN layer 110 and a second side (back) metal layer 122. Conducting current (or otherwise forming electrical contact) with the n+ type GaN layer 110

In a specific example where the second side (back) metal layer 122 is not used, the through via structures (131, 133, 134, 136) can be used to make electrical contact with the conductor 31A (at devices 300, 3). A, 3〇〇B, 3〇〇c, 3〇〇D, 72〇730, 760) and conduct current (or otherwise form electrical contact) between conductor 31〇a and n+ type GaN layer 110) . These through-via structures, 13 1 , 13 3 , 13 4 , 13 6 ) are "in the manufacturing process after singulation of the diodes via back grinding and polishing or laser stripping (discussed below with reference to Figures 64 and 65) Exposure to the second side (back side) of the diodes 〇D, l〇〇F, 100G, 100K' and may remain exposed or may be covered by the second side (back) metal layer 122 (and with the second side (back) The metal layer 122 forms an electrical contact) (as illustrated in Figure 66). The through via structures (131, 133, 134, 136) are much narrower than typical vias known in the art. The depth through the via structure (131, 133, 134) (the height extending through the substrate 105) is approximately 7 microns to 9 microns and extends through the via structure 136 (extending through the composite GaN iso 43 201218416 structure) The height) is approximately 2 microns to 4 microns and has a width of between about 3 microns and 5 microns, as compared to a conventional via having a width of about 30 microns or greater than 30 microns. 11-13, 17, 18, 20-22, 66 and 68 also illustrate the second side (back side) forming the second terminal or contact 127 or the first terminal 125 (diode 1 00K) as the case may be. Metal layer 122. The second terminal or contact 127 can be used, for example, but not limited to, to facilitate current conduction to the n + -type GaN layer Uo, such as via various through via structures (13, 133, 134, 136.), and/or Helping to make electrical contact with conductor 31A. Referring to Figures 21-22, exemplary diode 100K illustrates several other and optional features. Figure 22 illustrates the fabrication of a layer cross section to illustrate how to fabricate an exemplary polarizer 10 〇Κ; then flip or reverse the exemplary diode 00 κ to face up as illustrated in Figure 21 for Exemplary devices 3, 300, 300, 300, 3, D, 72, 73, 76, wherein light is emitted through the upper n + -type GaN layer 11 (in the LED embodiment). Therefore, the first terminal is formed by the second side (back surface) metal 122, and the orientation of the n + -type GaN layer 11 〇 and the p + -type GaN layer 115 can be reversed as well (in the n + -type GaN layer in Fig. 21! The upper layer) (compared to other specific examples 100-1), the ten second terminals 127 are formed of - or a plurality of metal layers, even without the substrate 1〇5, 105A or the buffer layer 145, which is manufactured During this period, it has been substantially removed, leaving a composite-heterostructure (P+-type layer 115, quantum well region 185, and p+-type (four) layer ιΐ5) in place, and this may also remove its (10) GaN layer or substrate. Side or side edges: 12!) are relatively thinner (or smaller) than the other illustrated examples, 44 201218416 is less than 10 microns in an exemplary embodiment, or more particularly about 2 to 8 microns, Or more particularly from about 2 microns to 6 microns or more specifically from about 2 microns to 4 microns, or more specifically from 2.5 microns to 3.5 microns, or about 3 microns, also to prevent individual dipoles from being in the range of 1 〇〇 Devices 3〇〇, 3〇〇8, 300B, 300C, 3〇〇D, 72〇, 73〇, 76〇 are erected on their sides or side edges (1 2 1 ) during manufacture. The second side (back) metal 122 forming the first terminal 125 is relatively thick, in the illustrative embodiment, from about 3 microns to 6 microns, or from 4. 5 microns to about 5 to 5 microns, or about 5 microns, such that The height of the diode is about 11 microns to 15 microns, or 12 microns to 14 micro, or about 13 microns, so that the electrical layer 315 is deposited and in contact with the second conductor 32, and is for example (but not The invention is limited to an elliptical shape having a major axis of about 14 microns and a minor axis of about 6 microns. The second side (back side) metal forming the first terminal 125 does not extend over the i month to facilitate back alignment and The first body 127 is formed of a metal layer 12 〇 B, and in an exemplary embodiment, eight thicknesses, typically from about 3 microns to 6 microns, or from microns to microns The micron or thickness is about 5 microns. As also illustrated, the insulating (passivating) layer 135A is also used to electrically or electrically isolate the metal | 12 〇 B from the vias and to deposit a passivation (nitride) layer 135 independently of the perimeter. The description of this is U5A. In the illustrative example, the width of the dipole ancestor 100K The distance between the face and the face, generally in the shape of a hexagon, rather than the distance between the apex and the apex, is for example, but not limited to, about 丄〇 microns to 50 U meters or more particularly about 2 〇 microns to 3 〇 microns, or more particularly from about 22 microns to 28 lbs, -ν' φ, 4+ U or more particularly from about 25 microns to 27 microns, 45 201218416 or more particularly from about 25.5 microns to 26.5 microns Or, more particularly, about % micron. The metal layer 120A may also be included in the fabrication of the second terminal 127 during the fabrication of the second terminal 127. During the fabrication of the diode 100Κ (and in other exemplary diodes 100-100L specific examples) Medium), top GaN layer (illustrated as ρ+ type

The GaN layer 115, but may be other types of GaN layers, as illustrated in FIG. 25, may also pass through an extremely thin optically reflective metal layer (illustrated as silver layer 103 in FIG. 25) and/or an optically transmissive metal layer. (not separately stated) (such as nickel-gold or nickel-gold-nickel having a thickness of about 100 angstroms) metallized and alloyed therewith to aid in ohmic contact formation (and possibly to the n + -type GaN layer 11) Light reflections), some of which are then removed along with other GaN layers, such as during formation of the GW mesa. Referring to Figures 23 and 24, the exemplary eleventh dipole i 〇〇L specific example differs from all other illustrated diodes 1〇〇_1〇〇κ specific examples in the diode 100L. The first and second terminals 125, 127 are provided on the same side (upper or top). When used in the exemplary device 7〇〇, 7〇〇A, 7〇〇b, 740, 750 '770 specific examples, light will pass through the (lower) n+ type layer 11〇' typically through substantially optically transparent The substrate 3〇5A emission (in the lED specific example) or absorption (for the photovoltaic specific example) is illustrated in Figure 8〇82. Since the first and second terminals 125, 127 are on the same side (upper or top) of the diode 100L, the exemplary diode 1 does not use any second side (back) metal 122, and There is generally no need for any of the various via structures previously discussed. There is little or no substrate 1〇5, 1〇5-8 or buffer layer 145, which has also been substantially removed during fabrication, leaving a composite in place The GaN heterostructure (p+ type GaN layer ii 5 'quantum well region 46 201218416 185 and p + type GaN layer 115 ) ' and possibly also removes a certain amount of other GaN. The side or side edges (121) are also relatively thinner (or less thick) than the other illustrated embodiments, and in the illustrative embodiment are from about 2 microns to 4 microns, or more specifically from 2.5 microns to 3.5 microns, Or about 3 microns, also to prevent the individual one pole 100L from standing on its side or side edge (121) during manufacture of the device 7A, 700A, 700B, 740, 750, 770. Not separately stated, during the period of the IE-pole body (L (and in other specific examples of the exemplary diode 1Q0100K), the top GaN layer (described as the P + -type GaN layer 115, but may be other A GaN layer of the type, as illustrated in Figure 25, may also pass through an extremely thin optically reflective metal layer (illustrated as silver layer 1〇3 in Figure 25) and/or an optically transmissive metal layer (not separately illustrated) (not separately illustrated) Metallization, such as nickel-gold or gold-gold, having a thickness of about 1 angstrom, is metallized and alloyed therewith to aid in ohmic contact formation (and possibly provide light reflection toward the n+-type GaN layer 110), some of which are followed by Together with other GaN layers such as during the formation of GaN mesas. As illustrated in Figures 23 and 24, the GaN mesas (p + -type GaN layer 115 and quantum well layer 185) are generally atypical in shape, somewhat similar to the top-triangled triangle (eg, by hexagon or circle) Forming a plurality of (three) drawn portions to provide space for metal contacts 128 (illustrating three metal contacts 128) on the upper surface of the n+ type GaN layer 11?, the metal contacts 128 Forming a second terminal I' on the top or top surface of the diode fox in each of the illustrative embodiments' - the height of the mesa is generally from about 5 micrometers to 1.5 micrometers, or more particularly from 8 micrometers to 12 micrometers Or, more particularly, from 0.9 to 1.1 microns, or more particularly about 1 inch. Metal Contacts 47 201218416 128 can be formed from a via metal with a height of approximately 〇 75 microns! 5 microns, or a height more especially about 0.9 microns to! Micron, or more particularly 1.0 micron, of about 500 nm, such as about 100 angstroms of titanium '5 〇〇 nm of aluminum and 100 nm of gold, and having a width of about 25 to 35 microns (radial amount) Measurement). In various exemplary embodiments, the first terminal 125 formed of metal layers i2A and i2B is shaped like a GaN mesa but smaller than a GaN mesa, typically having a height of between about 4 microns and 8 microns, or more particularly 5 Micron to 7 microns, or more specifically about 6 microns, to allow deposition of the first conductor 310A in contact with the metal contact 28 and permit deposition of the dielectric layer 315, which in turn is in contact with the second conductor 320 (Fig. 8 〇_82 is explained). In this exemplary embodiment, the first terminal 125 formed by the metal layers 120A and 120B is also passivated (135). In addition to providing insulation and protection from contact with the first conductor 310, the passivation can also be used to facilitate The structural integrity of a terminal 125 is suitable for resisting various forces applied in the printing process. In an exemplary embodiment, the width of the diode 100L (the distance between the face and the face of the generally hexagonal shape rather than the distance between the apex and the apex) is from about 1 micron to micron' or more particularly From about 20 microns to 30 microns, or more specifically from about 22 microns to 28 microns, or more specifically from about 25 microns to 27 microns, or more specifically from about 25.5 microns to 26. 5 microns, or more specifically about % microns. In an exemplary embodiment, the height of the diode 1 〇〇L is generally from about 8 microns to 15 microns or more particularly from 9 microns to 12 microns, or more specifically from about microns to 11.5 microns. For example, a straight line of about 10 should be noted that the size of the two-terminal device is more generally a larger diameter (width or length, depending on the shape, also for face-to-face measurement) 48 201218416 micron to 75 microns, and height is about 5 to 25 microns. 25 is a cross-sectional view through a portion of a composite GaN heterostructure (or GaN mesa) (n+-type GaN layer 110, quantum well region 185, p+-type GaM 115) and metal layers 120A, 120B illustrating a composite GaN heterostructure The geometry and texture of the outer surface and/or the inner surface (eg, the surface of the p + -type GaN layer U5 or the smear layer no or other silver or mirror layer (1G3)) as appropriate. Any of the various features illustrated in Figure 25 can be used as an alternative to various exemplary diodes 1G (any of the M sails.) As described in Circles 1-24, 'Composite GaN Heterostructures The outer surface and the &quot;Gone surface can be relatively smooth. As illustrated in Figure 25, any of the various outer and/or inner surfaces of the composite GaN heterostructure can be fabricated with a variety of textures, geometries, mirrors, Any of a reflector or other surface treatment. For example (but not limited to), the composite (4) outer surface of the heterostructure (upper surface or top surface) (illustrated as n+ type GaN厣 彳Λ, 1 Ν layer 110) may be etched to provide a surface roughness 112 (indicating that the rabbit's π Α is a cone-shaped conical or conical structure), such as to reduce internal reflection and improve - Μ 杈 一 一 一 10 [Light extraction in specific examples. In addition, composite GaN heterogeneous

The outer surface of the structure (e.g., the p+ type GaN layer 115 or the n+ type GaN layer 11: surface) may be covered and etched or otherwise fabricated to have various geometricalities. The structure is also, for example, but not limited to, a dome shape or a lens shape 116; a super-ring _ (cloth, honeycomb or waffle shape 118; stripes 113 or other seven shapes (eg hexagons, Triangles, etc.) 117. In addition, side 121 also includes various mirrors or reflectors 109, such as dielectric reflectors (eg, δί〇, /ς; ί μ,

Sl3N&lt;) or metal reflector. A variety of surface treatments and reflections have been described in you. 4 ^ 例如 例如 Fu Fu Fu Fu Fu Fu Fu Fu Fu 49 49 49 49 49 49 49 49 49 49 49 49 Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu Fu U.S. Patent Application Publication No. 2010/0295014 A1 (published on Nov. 25, 2010) by Kang et al. and U.S. Patent No. 7,825,425 (issued on May 2, 2010) by Shum. All of the above patents are incorporated herein by reference. Other surface textures and geometric shapes are illustrated in Figures 1〇41〇8. With continued reference to Figure 25, the inner surface of the composite GaN heterostructure (or more generally, the diode 100-100L) can also be fabricated to have any of a variety of textures, geometries, mirrors, reflectors, or other surface treatments. As illustrated, by way of example and not limitation, reflective layer 1 〇 3 can be used to provide orientation, such as by using a silver layer that is applied during fabrication (before fabrication of metal layers 1〇2A, 1〇2B) The exposed surface of the diode 100_100L reflects outward light and enhances light extraction, and the (4) 1G3 may be smooth (lu) or have a textured (107) surface. By way of example and not limitation, the inner surface of the composite GaN uranium structure may also be smooth or have a textured surface such as by using other 4 1 〇 8 可 which may be, for example, a diffuse type 2 InGaN material. In addition, any of the various surface geometries and textures presented as appropriate may be used alone or in combination with each other 'such as having an outer surface texture mountain and inner surface texture (1 〇 7 ) and/or a reflective layer 1 〇 3 Complex diffuse structure. Can also be used; ^He causes the use of various layers that exist depending on the situation, such as the use of n-type in layer 〇8

InGaN materials provide better contact, regardless of any surface treatment that may or may not be used. Typically less than about 450 microns, and all dimensions are more particularly smaller than all dimensions of the diode 100-100L. All dimensions are more particularly less than about 2 microns micron 50 201218416 about (10) microns, and all dimensions are more particularly less than 50 microns. In the illustrated illustrative embodiment t, the width of the diode is generally about 10 microns to 50 microns, or more specifically about 20 microns to 3 microns, and the height is about 5 Micron to 25 microns, or heights more particularly 5 microns to B microns, or diameters from about 25 microns to 28 microns (side to side rather than apex versus apex) and height from 1 〇 to 15 microns. In an exemplary embodiment, the diode 1〇 (M〇〇L does not include formation; the height of the metal layer or the inside (ie, the height of the side 121 including _iso;=) depends on the specific example. From about 2 microns to b microns ' or more especially from about 2 microns to 4 microns, or more specifically from 7 microns to 12 microns, or more specifically from 8 microns to 11 microns, or more specifically from 9 microns to 10 microns. Or more particularly less than 1 〇 micron to 3 〇 micron, and the height of the metal layer 12 〇 B forming the bump or protruding structure is generally about 3 microns to 7 microns. Since the size of the diode is engineered to be in device fabrication Within the selected tolerance range of the period, for example, but not limited to, using an optical microscope (which may also include a measurement software), a scanning electron microscope (sem), or a Horiba LA-920 (eg, in a dilute solution of particles) Measure the particle size (and particle size distribution) using Fraunhofer diffracti〇n and light scattering in a diode ink or any other liquid or gel to measure the diode Dimensions. All of the diodes 1〇〇_1〇〇L Dimensions or other measurements shall be considered as the average of the plurality of diodes i 〇〇 _ 丨〇〇 L (eg mean and / or median) ' and will vary significantly depending on the particular instance chosen (eg - pole The body 110-100J or 100κ or 1〇〇L will generally have different individual sizes.) 51 201218416 Diode 1 0 (Μ GGL can be fabricated using any semiconductor manufacturing technology currently known or developed in the future 1 26_66 A plurality of exemplary methods of making exemplary diodes 100-100L and illustrating several other exemplary diodes 100H, 1001, and 1 (in cross-section). Those skilled in the art will appreciate that diodes 100_100L are fabricated. Multiple of the various steps may be performed in any of a variety of order 'can be omitted or incorporated in other orders, and may result in a number of diode structures in addition to the illustrated structure. For example' 38.44 illustrates the formation of a diode 100Η including a center and a peripheral through (or deep) via hole ΐ3ι and 134, respectively, in the presence or absence of a second side (back) metal layer 122 (combined diode 1) 〇〇]〇 and 1〇〇(} characteristics And FIGS. 45-50 illustrate the formation of the diodes 〇〇i including the surrounding vias 133 under the second side (back) metal layer 122, as appropriate or absent, and which may be fabricated in conjunction with other fabrication steps. Combining to include a center or perimeter through the vias 1 3 1 and 1 3 4, for example to form a diode 1 〇〇 f. Figures 26 27 and 29-37 illustrate the fabrication of diodes 100, 100A, in accordance with the teachings of the present invention, A cross-sectional view of an exemplary method of 100B, 100C, wherein Figures 26-29 illustrate fabrication on the wafer 150 level and the circle 3 〇 37 illustrates fabrication on the diode 100, 100A, 100B, 1 〇〇 c level. The various fabrication steps described can also be used to form other diodes 1〇〇D_1〇〇L, and Figure 26_32 is applicable to any diode 100_100L, depending on the selected substrate 1〇5,1〇58. Figures 26 and 27 are cross-sectional views of a wafer 1 50 (such as a germanium wafer) having a layer of germanium dioxide (or "oxide") 19". Figure 28 is a plan view (or top view) of a tantalum wafer 15 of a ruthenium dioxide layer 19 having an etched grid pattern. An oxide layer 190 (typically about 〇丨 microns thick) is deposited or grown 52 201218416 on wafer 150, as shown in FIG. As illustrated in Figure 27, a portion of the oxide layer i 9 已 has been removed via a suitable or standard such as the photoresist and/or photoresist layer and etching known in the art, leaving a pattern of . Also known as "street" oxide 19 〇, as illustrated in the figure. Figure 29 is a layer 190 having a buffer layer 145, a dioxide dioxide or "oxide" layer, and a GaN layer (in an exemplary embodiment, typically stray crystal growth or deposition to a thickness of about K25 microns to 2.5 () microns. Although the smaller or larger thickness is also in the cross-sectional view of the wafer 15 of the present invention (such as the Shihwa wafer), the GaN layers are illustrated as polycrystalline GaN 195 on the oxide layer 19, = and the sub-well region 185 and the P + -type GaN layer 11 5 in the core layer 110 of the composite heterostructure are formed as described above. As indicated above, a buffer layer 145 (such as aluminum nitride or tantalum nitride and typically about 25 angstroms thick) is deposited on the Shihuajing® 150 to aid in subsequent GaN deposition. Polycrystalline GaN 195 grown or deposited on oxide 190 reduces stress in a composite GaN heterostructure (n+ type GaN layer 11 量子, quantum well region ι85, and p + GaN layer 11 5 ) having a single crystal structure and / or strain (for example due to thermal mismatch between GaN and germanium wafers). Other equivalent methods for reducing the stress and/or strain within the scope of the present invention include, for example, but not limited to, roughening the surface of selected regions of the germanium wafer 15 and/or buffer layer 145 to cause the corresponding GaN regions The trench is not etched for the single crystal ' or in the germanium wafer 150 such that there are no continuous crystals across the wafer 150. In other exemplary fabrication methods, such as when other substrates, such as GaN (substrate 105) on a sapphire wafer 15A, are used, the road formation and stress reduction fabrication steps can be eliminated. GaN deposition or growth to form a composite GaN heterostructure can be provided by any selected process known or to be known in the art of the 2012 Pat. No. 2012 20121616 and/or can be proprietary to the device. In an exemplary embodiment, a hit type is included. The composite GaN heterostructure of the core layer n 〇, the lining well region 185 and the p + -type GaN layer U5 can be obtained from Photonics and other suppliers, for example, but not limited to, Walnm, CaHf〇rnia, usA. 30 is a cross-sectional view of a substrate having a buffer layer 145 and a composite heterostructure (n+ type (layer 110, quantum well region 185, and p+ type GaN layer Π 5) in accordance with the teachings of the present invention, illustrating wafers A very small portion of 丨5〇 (such as region 191 of Figure 29) to illustrate the fabrication of a single diode 1〇〇_1〇〇L. Suitable or standard mask and/or photoresist layer known in the art. And etched, the composite GaN heterostructure (n + type (^ layer u〇, quantum well region 185 and p + -type GaN layer 115) is etched to form a GaN mesa structure 187, as illustrated in FIGS. 31 and 32, wherein Figure 32 illustrates a GaN mesa structure 187A having relatively inclined sides that may contribute to light generation and/or absorption. Other GaN mesa structures 187 may also be constructed, such as partially or substantially hyper-annular GaN mesa structures 187, As illustrated in Figures 1, 、, 13, η, 17, 20, 22, 39-44, and 66. Etching of GaN mesas (also known or to be known by the art as appropriate or standard masks and/or light) After the resist layer and the remaining layer, a (light or blind) guide etching is performed, as illustrated in FIG. 3, #成through the GaN layer. And the buffer layer 145 and into the shallow trench 186 in the germanium substrate 105. Also formed by the appropriate or standard mask and/or photoresist layer and etching known in the art, followed by deposition of a metallization layer to form a P+ The metal contact 120A of the GaN layer 115 is formed and the via 130' is formed as illustrated in Figure 34. In an exemplary embodiment of the example 54 201218416, a plurality of layers of metal are deposited, the first layer or the initial layer being formed with the P+ type GaN germanium. An ohmic contact, which typically comprises a five-membered layer (nickel layer, followed by a gold layer) of about 50 angstroms to 200 angstroms each, followed by about 450 ° C to 500. (: about about / 〇 % oxygen and 8 〇 % gas Annealing in the oxidizing atmosphere of the gas causes the brocade to rise to the top layer to form a nickel oxide layer, and form a metal layer (as part of 120A) having a superior ohmic contact with the p + -type GaN layer 115. As another example, During the fabrication of the diode 1 OOL (and in other exemplary two-pole slave 100-100K specific examples), the top (four) layer (illustrated as the p + -type GaN layer 115, but may be other types of GaN layers, as shown in the figure Illustrated in the middle) can also be through a very thin optically reflective metal layer (illustrated in Figure 25 as Layer 103) and/or an optically transmissive metal layer (not separately illustrated) such as nickel-gold or bromine-nickel-nickel having a thickness of about 100 angstroms is metallized and alloyed therewith to aid in ohmic contact formation (and It is possible to provide light reflection towards the n+ type GaN layer 110. 'Some of which are then removed along with other GaN layers, such as during the formation of GaN mesas. Another metallization layer may also be deposited, such as to form a thicker interconnect metal to shape And the metal layer 12〇a is formed completely (for example, for current distribution) and the via hole 130 is formed. In another exemplary embodiment (illustrated in Fig. 45_5A) t, a point is formed with the P + -type GaN layer 115. It may be formed before the (four) stage (four), followed by engraving, via (four), and the like. Many other metallization processes and corresponding materials that make up the metal layer and 120B are also within the scope of the present invention, where different manufacturing facilities often use different processes and material choices. By way of example and not limitation, any or two metal layers 12 and 12 Å can be deposited by deposition to form an adhesive or seed layer of thickness typically 50 angstroms to 200 angstroms. 201218416 1 : To the 4 micron nickel layer and the thin layer of gold or "flash layer" (the gold "flash layer" is a layer of 50 angstroms to angstroms), and deposits 3 micrometers to $micrometers. Children's records (, about 5 micron, physical vapor deposition or electric forging) and gold, - titanium, followed by deposition of gold, followed by deposition of nickel (pair; η 0B thickness is usually 3 micro to 5 microns ), and then deposit gold, or by the deposition of nickel, followed by deposition of gold, etc. In addition, shape, ghost = dog metal structure of the structure! 2qb height can also be changed in the example ', body example Usually between about 35 microns and 5 · 5 microns, depending on the thickness of the substrate (for example, about 7 to 8 microns versus about 1 micron), so that the resulting diode i 〇〇i〇〇l has a substantially uniform height and form factor. For subsequent follow-up of the diode 1G (M hunger singly and singly from the wafer 15 Forming, through the appropriate or standard mask and/or photoresist layer and button engraving known in the art, as illustrated in Figure 35 and other Figures 4 and 48, forming a channel around the perimeter of each of the diodes 100-100L The groove 155 (for example, as also illustrated in Figures 及 and 9). The width of the Phytophthora 55 is generally about 3 microns to 5 microns and its depth is from !0 microns to 12 microns. Suitable or standard materials and/or photoresist layers and button knuckles known in the art, as illustrated in %, such as by gas cutting for, for example, but not limited to, electron enhanced chemical vapor deposition ECVD, are grown or deposited. The nitride purification layer (1), a thickness of about 0.35 micrometers to U micrometers, is then deposited with photoresist and subjected to a step to remove unnecessary nitride regions. In other exemplary embodiments, the sidewalls of the monolithic trenches may be passivated or may not be passivated. The metal layer 120B having bumps or protruding structures, typically having a height of 3 microns to 5 microns, is typically formed by etching a suitable or standard mask and/or photoresist layer and 56 201218416 known in the art, as shown in FIG. Explained in the middle. In an exemplary embodiment, the formation of the metal layer 120B is performed in several steps, using a metal seed layer, followed by electroplating or stripping to redeposit the metal, removing the resist and cleaning the seed layer region. In addition to the wafer 50 monolithic diode (in this case 'diode 1〇〇, 100A, 100B, 100C), the diodes 1〇〇, 100A, 100B are completed in other ways as described below. 100C 'and it should be noted that the completed diodes 1〇〇, ιοοΑ, 100B, 100C have only one metal contact or terminal on the surface of each of the diodes 100, 100A, 100B, 100C (first Terminal 125). As an alternative, the second side (back) metal layer 122 can be fabricated to form the second terminal 127 as described below and as mentioned above with reference to other exemplary diodes. Figures 38-44 illustrate another exemplary method of fabricating a diode 100_100L where Figure 38 illustrates fabrication on the wafer 150A level and Figures 39-44 illustrate fabrication on the diode 100-100L level. 38 is a cross-sectional view of a wafer 150A having a substrate 1〇5 and having a composite GaN heterostructure (n+-type GaN layer 11〇, quantum well region ι85, and P+-type GaN layer 115). In this illustrative embodiment, a relatively thick GaN layer (to form a substrate 105) is grown or deposited on sapphire (106) (sapphire wafer 15A sapphire (106)), followed by deposition or growth of a GaN heterostructure ( The n+ type core layer 11〇, the quantum well region 185, and the p + type GaN layer 115).

The area of 3 8 192 ) to illustrate the fabrication of a single small part of a single _ | ί :&gt; UA (such as a diode (eg, diode 100H, 100K) 57 201218416. Appropriate or known in the art Standard mask and/or photoresist layer and etch, etched composite GaN heterostructure (n+-type GaN layer), quantum well region 185, and P+-type (}31^ layer 115) to form GaN mesa structure i87B. After the mesa etching, the appropriate or standard mask and/or photoresist layer and etching are known or will be known in the art to perform (through or deep) the trench and the monolithic trench etching, as shown in the figure. As described in FIG. 4, one or more relatively deep guides of sapphire (1〇6) passing through the non-mesa portion of the GaN heterostructure (...type GaN layer u〇) and passing through the GaN substrate 105 to the wafer 150A are formed. Hole channel 188 and forming the singulated trench U5 described above. As illustrated, a central via trench 188 and a plurality of peripheral via trenches 188 are formed. For the diode 1〇〇K specific example, It is also possible to perform shallow or blind via etching at the center of the mesa structure U7B without forming any surrounding guide holes or trenches. The metallization layer is then deposited via a suitable or standard mask and/or photoresist layer and etching known in the art to form a central through via 131 and a plurality of peripheral through vias m' which are also associated with n+ type GaN 1 〇 forms an ohmic contact, as illustrated in Figure 41. In an illustrative embodiment, several layers of metal are deposited to form through vias 13 1 , 13 4 . 举 _ _ _ _ _ _ _ _ _ Titanium and crane are coated to coat the side and bottom of the trench 188, and the enamel layer is opened to form a seed layer, which is then plated with nickel to form solid metal vias 131, 134. It is also known in the art. A metal layer 12A is formed by forming a metallization layer ohmically in contact with p + S _ layer ι 5, as appropriate or standard mask and/or photoresist layer and (iv), in the exemplary embodiment. A plurality of layers of metal may be deposited as previously described to form a metal layer i2〇a and form an ohmic contact with the P+ type (10) layer U5. This technique is then used 58 201218416 • A medium or standard mask and/or Or a photoresist layer and etch, as illustrated in Figure 43, such as by way of example Plasma enhanced chemical vapor deposition (VD) nitride or arsenic oxide to grow or deposit a nitride passivation layer I35, typically up to about 0.35 microns to ho micron thickness, followed by deposition of light and etching steps to shift In addition to the unnecessary tantalum nitride regions, a metal layer 120B having bumps or protruding structures is formed via appropriate or standard masking and/or photoresist layers and etching as is known in the art, as illustrated in FIG. In an exemplary embodiment, as described above, the formation of the metal layer 12〇b is performed in a right-drying step, using a metal seed layer, followed by electroplating or stripping to redeposit the metal, removing the resist and cleaning the crystal. The seed layer area is carried out. In addition to the subsequent singulation of the diode 150A singulated diode (in this case, the diode i 〇〇 h), the diode 1 〇〇H is completed in other ways as described below, and should be noted, The completed diode 100H also has only one metal contact or terminal (also the first terminal 125) on the upper surface of each of the diodes 1〇〇H. Also as an alternative, the second side (back) metal layer i 22 can be fabricated to form the second terminal 127 as described below and as mentioned above with reference to other exemplary diodes. 45-50 illustrate another exemplary method of fabricating a diode 1〇〇_1〇〇L, wherein FIG. 45 illustrates fabrication on a wafer 150 or 15 层 level and Figure 46_5 〇 illustrates a level at a diode 100_100L Made on. 45 is a substrate having a buffer layer 145, a composite GaN heterostructure (n+-type GaN layer ιι, a quantum well region, and a P+-type GaN layer 115) and a metal 2 layer (metal layer 120A) forming an ohmic contact with the p+-type (10) layer. A cross-sectional view of 105. As described above, the buffer 59 201218416 layer 145 is typically fabricated when the substrate 105 is germanium (e.g., using germanium wafer 15 turns), and for other substrates (such as GaN substrate ι 5), the buffer layer 145 may be omitted. Additionally, sapphire 106 is illustrated as an alternative, such as a thick GaN substrate 1 〇 5 for growth or deposition on sapphire wafer 150A. As also described above, in the earlier step of fabricating the diode, after deposition or growth of the GaN heterostructure (n + -type GaN layer 110, quantum well region 185 and p + -type GaN layer 115), rather than later In the step, a metal layer 119 is deposited (as a seed layer for subsequently depositing the metal layer 120A). For example, the metal layer ι 9 may be a nickel and gold flash layer having a total thickness of about several hundred angstroms, or may be passed through an extremely thin optically reflective metal layer (illustrated as silver layer 1 〇 3 in FIG. 25) and / Or an optically transmissive metal layer (such as nickel-gold or nickel-gold-nickel having a thickness of about 1 Å) metallized and alloyed therewith to facilitate ohmic contact formation (and possibly provide light toward the n+-type GaN layer 110) Reflected), some of which are then removed along with other GaN layers, such as during GaN mesa formation. Figure 46 is a cross-sectional view of a metallization layer (metal layer 19) substrate having a buffer layer, a fourth mesa-etched composite heterostructure, and an ohmic contact with the p + -type GaN layer, illustrating wafer 15 or 15 A very small portion of 〇A (such as region 193 of Figure 45) to illustrate the fabrication of a single diode (e.g., diode 1.00). Etching a composite GaN heterostructure (n+ type_layer-lithon well area I85 and P+ type GaN layer 1丨5) (along with metal layer) via appropriate or standard mask and/or photoresist layer and etching known in the art (1) to form a GaN mesa structure 187C (along with the metal layer 119). After the G: mesa etch, the metallization layer is also deposited via any suitable or standard mask and/or photoresist layer known or to be known in the art (using any of the previous processes and metals, such as titanium and aluminum) And then annealing) to form 60 201218416 « . Metal layer 12 〇 A and also form a metal layer 12 9 having ohmic contact with the n + -type GaN layer 110 as illustrated in FIG. After metallization, an appropriate or standard mask and/or photoresist layer and etch as known or to be known in the art, as illustrated in Figure 4, 'pass through the non-mesa portion of the GaN heterostructure (n+ The GaN layer 110) and penetrates or penetrates deeper into the substrate 105. (for example, as previously described, the sapphire (106) passing through the GaN substrate 105 to the wafer 150A or passing through a portion of the germanium substrate 105) The trench is etched and forms the singulated trench 155 described above. A metallization layer is then deposited in the trench 155 via a suitable or standard mask and/or photoresist layer and etching known in the art to form a through or deep surrounding via 13 3 (around the diode (1) The entire periphery or side of 〇〇I) provides electrical conductivity) which also forms an ohmic contact with the n+ type GaN layer 11 , as illustrated in FIG. In an exemplary embodiment, a plurality of layers of metal may also be deposited to form a peripheral through via 13 3 . For example, the silver-plated titanium and tantalum may be formed by coating the side and bottom of the trench 155 to form a seed layer, followed by nickel plating to form a solid metal surrounding via 13 3 . The appropriate or standard mask and/or photoresist layer and etching known in the art are then again used, as illustrated in Figure 50, such as by, for example, but not limited to, plasma enhanced chemical vapor deposition (PECVD). Nitride is grown or deposited with a nitride passivation layer 13 5 ' typically up to about 5 3 5 microns to 1. 〇 microns thick, followed by deposition of photoresist and an etching step to remove unnecessary nitriding regions. Next, a metal 61 201218416 layer 120B having bumps or protruding structures is formed as described previously by suitable or standard masking and/or photoresist layers and etching as is known in the art, as illustrated in FIG. Except for the subsequent 15 〇 or 15 单体 singularized diodes (in this case, the diode 1001), the diode 1001 is completed in other ways as described below, and it should be noted that such The completed diode 1001 also has only one metal contact or terminal (also the first terminal 125) on the upper surface of each of the diodes 1001. Also as an alternative, the second side (back) metal layer 22 can be fabricated as described below and as mentioned above with reference to other exemplary diodes to form the second terminal 127. Figures 51-57, 67 and 68 illustrate another exemplary method of fabricating a diode 1 〇〇 κ after fabrication on the 15 或 or 150A level of the wafer illustrated in Figure 45. Figure 51 is a cross-sectional view of a substrate having a buffer layer, a fifth mesa-etched composite QaN heterostructure 187D, and a metallization layer that forms an ohmic contact with the p+ type GaN layer. As described above, the buffer layer 145 is typically fabricated when the substrate 1〇5 is germanium (e.g., using the germanium wafer 150), and for other substrates (such as the GaN substrate 1〇5), the buffer layer 145 may be omitted. In addition, sapphire 1〇6 is illustrated as an alternative, such as for a thick GaN substrate 1〇5 grown or deposited on sapphire wafer i5〇A, in which case buffer layer 145 may be omitted. As also described above, in the earlier step of fabricating the diode, after deposition or growth of the GaN heterostructure (n+ type GaN layer 110, quantum well region 185, and p+ type GaN layer ι 5), rather than at a later step The metal layer 丨 19 is deposited (as a seed layer for subsequently depositing the metal layer 120A). For example, the metal layer 119 may be nickel and gold (four) having a total thickness of about several hundred angstroms, or may be passed through an extremely thin optically reflective metal layer (illustrated as silver layer 1 〇 3 in FIG. 25) and/or An optically transmissive metal layer (such as nickel, nickel-gold or nickel-gold-nickel having a thickness of about 1 Å) is metallized and alloyed therewith to help form with the P + -type GaN layer 62 2012 201218416 « • Team contacts (and possibly light reflection towards the n+ type GaN layer 110), some of which are then removed along with other GaN layers, such as during GaN mesa formation. Etched composite GaN heterostructures (n+-type GaN layer 11 量子, quantum well region 185, and p + -type GaN layer 115) (along with metal layers) via appropriate or standard mask and/or photoresist layers and etching known in the art 119 together) to form a GaN mesa structure 187D (together with metal layer ι 9 ) having a depth of about 1 micron. 'It generally has a toroidal shape with an inner diameter of about 14 microns and an outer general hexagonal diameter of about 26 microns (side) For side measurement). After GaN mesa etching (187D), blind or shallow via trench etching is also performed via appropriate or standard masking and/or photoresist layers and etching known or to be known in the art as shown in FIG. Illustrating that a shallower central via trench 211 is formed into the non-mesa portion of the GaN heterostructure (n+ type GaN layer no). As illustrated, a circular center guide having a depth of about 2 microns and a diameter of 6 microns is formed. Hole channel 211. The central via 13 is then formed by a suitable or standard mask and/or photoresist layer and button-deposited metallization layer as known in the art. The central via 136 also forms an ohmic with the n+ type GaN layer 11 Contact, as illustrated in Figure 53. In an illustrative embodiment, several layers of metal (eg, via metal) are deposited to form a central via 13 6 . For example, it is possible to forge or atomize about 1 〇〇 of titanium and about 1.5 to 2 μm of aluminum to coat the sides, the bottom and a portion of the top of the trench 211, and then form an alloy at about 55 〇〇c. A solid metal via 13 6 having a maximum diameter of about 1 〇 micron is formed on top of the n + -type GaN layer 11 . Appropriate or standard masking and/or photoresist layers and stencils known in the art are then also used, as illustrated in Figure 5.4, such as by electropolymerization enhanced by, for example, (but not limited to 201218416) electropolymerization. (PECVD) nitrogen cutting or gas oxidizing cerium to grow or deposit a first nitride passivation layer 135A, - to 丨·. Micron, or more especially about. The thickness of .5 microns is two 8 micrometers; the largest diameter, followed by deposition of photoresist and an etching step to remove unnecessary tantalum nitride regions. The metallization layer is then deposited via a suitable or standard mask and/or photoresist layer and etch as known in the art to form a commonly used mold metal in contact with the p + -type GaN layer 115 as illustrated in FIG. A metal layer 12B having a bump or a protruding structure is formed. In an exemplary embodiment, several layers of metal may be deposited as previously described herein to form metal layers 120A and/or 12B for contact with p+ type layer 115, and for the sake of brevity 'here Not repeating. In an exemplary embodiment, the metal layer i2〇b is generally hexagonal in shape and has a diameter of about 22 microns (side-to-side measurement) and comprises about 100 angstroms of nickel....5 micrometers of aluminum, about 〇5. Nickel of glutinous rice and gold of about 100 nm. After metallization, an appropriate or standard mask and/or photoresist layer and etching are also known or to be known in the art, as illustrated in Figure 56, through a portion of the GaN heterogeneity using the methods previously described. The structure (into, but not 70, through the n+ type GaN layer 110) (typically about 2 microns in depth in an exemplary embodiment) is singulated trench etched and forms the singulated trenches described above 1 5 5. As illustrated in FIG. 57, the second nitride passivation layer 135 is then grown or grown, such as by, for example, but not limited to, plasma enhanced chemical vapor deposition (PECVD) of nitride or nitrous oxide. Generally, it is about 35 microns to a thickness of 201218416 microns or more especially _0. 5 microns. The unnecessary nitroxide regions are then removed using appropriate or standard masking and/or photoresist layers and etching as known in the art, such as to clean the top of metal layer 1G2B, which will form second terminal 127. Subsequent substrate removal, singulation and fabrication of the second side (back) metal layer 122 are described below with reference to Figures 64, 65, 67 and 68. Figures 5-8 and 69 illustrate another exemplary method of fabricating a diode after fabrication on the 15 〇 or 150 晶圆 level of the wafer illustrated in Figure 45. Figure 58 is a cross-sectional view of a substrate having a buffer layer, a sixth mesa-etched composite GaN heterostructure 187E, and a metallization layer forming an ohmic contact with the p+ type GaN layer. As described above, the buffer layer 145 is generally fabricated when the substrate 1〇5 is 矽 (for example, using the 矽 circle 150), and for other substrates (such as the GaN substrate 1〇5), the buffer layer 145 may be omitted. In addition, sapphire (7) 6 is illustrated as an alternative, such as for a thick GaN substrate 1 〇 5 ' grown or deposited on sapphire wafer i5 〇 A, in which case buffer layer i45 may be omitted. As also described above, in the earlier step of fabricating the diode, after deposition or growth of the heterostructure (type GaN layer 11 量子, quantum well region 185, and p + type layer ι 5), rather than in a later step, A metal layer 丨19 is deposited (as a seed layer for the post-metal layer 12A). For example, the metal layer i 丨 9 may be nickel and gold flash; f 'the total thickness is about several hundred angstroms' or may be reflected by a very thin light metal layer (illustrated as silver layer 1 〇 3 in FIG. 25) And/or an optically transmissive metal layer (such as nickel, nickel-gold or nickel-gold-nickel having a thickness of about 1 Å to about 25 nm) metallized and alloyed therewith to aid in formation with the p + -type layer 115 An ohmic contact (and possibly a 65 201218416 light reflection towards the n+ type GaN layer) 'where some of the metal layer 119 is then removed along with other GaN layers, such as during GaN mesa formation. In an exemplary embodiment, a town of about 2 nm to 3 nm, or more particularly about 25 faces, or gold is deposited and alloyed at 500 eC to form a metal layer 119 in ohmic contact with the metering layer 115. Etching the composite GaN heterostructure (n+ type GaN layer 11 量子, quantum well region 185, and P + type _ layer 115) (along with the metal layer) via appropriate or standard occlusion and/or photoresist layers and etching known in the art Ϊ́9 together) to form a GaN mesa structure 丨87E (together with the metal layer 119) having a depth of about 1 micron, which has the flattened triangular shape discussed above, to the first of the cut-out regions that reserve space for the contact 128 The second radius of the radius is about 8 microns and to the apex/side of the triangle is about 1 丨 microns. After GaN mesa etching (187E)., the first metallization layer is then deposited via appropriate or standard mask and/or photoresist layer and etching as known in the art to form contacts 128, the contacts 128 also forms an ohmic contact with the n+ type GaN layer 11A, as illustrated in FIG. In an exemplary embodiment, a plurality of layers of via metal are deposited to form contacts, and the contacts n8 serve as the first terminal 127. By way of example (but not limiting), about 100 angstroms of titanium, about 500 nm of aluminum, 500 nm of nickel, and 1 〇〇 nm of gold can be sputtered or plated to form solid metal contacts 128, each having a thickness of About 1] L micron, the width of the radial direct measurement is about 3 microns, and extends around the periphery of the n + -type GaN layer 11 如图 as illustrated in FIG. In an exemplary embodiment, three contacts 12 8 are formed as also illustrated in FIG. After depositing the contacts 128, other metallization layers are also deposited via appropriate or standard mask and/or photoresist layers known or to be known in the art (for 66 201218416 using any of the processes and metals previously described, Such as titanium and aluminum, followed by annealing) to form the metal layer 120A as a p + -type GaN layer! A portion of the ohmic contact of 15, as illustrated in FIG. 60. For example, in an exemplary embodiment, silver may be sputtered or plated with about 200 nm (forming a reflective or mirror layer), 200 nm of nickel, About 5 nm of aluminum and 2 nm of nickel are formed to form a centrally located metal layer 120A having a thickness of about 1; 1 micron and a diameter of about 8 microns. The other metallization layer is then deposited via a suitable or standard mask and/or photoresist layer and etching known in the art to form a commonly used mold for contact with the P + -type GaN layer 115 as illustrated in FIG. A metal layer 12〇B having a bump or a protruding structure formed of metal. In an exemplary embodiment, several layers of metal may be deposited as described herein to form metal layers 12A and/or 12B for contact with the p+ type GaN layer 115, and for the sake of brevity , will not be repeated here. In an exemplary embodiment, the metal layer 12A generally has a flattened triangular shape as illustrated in FIG. 23, wherein the first radius to the cut-out region (for the contact 128) is about 6 microns, to the apex of the triangle The second radius of the side faces is about 9 microns' each having a width of about 3.7 microns, and it comprises about 200 nm of silver (also forming a reflective or mirror layer on the P+ type GaN layer 115), about 200 nm of nickel, Aluminium of about 2 〇〇 nm, nickel of about 25 〇 nm, aluminum of about 200 rm, nickel of about 25 〇 nm, and gold of about 1 〇〇 nm are each added as a continuous layer, and then at 55 (rc) The alloy is formed in a nitrogen atmosphere for about 10 minutes to achieve a total height of about 5 microns (except for a height of about 1.1 micrometers of the metal layer 120A). It should be noted that this is between the first terminal and the second terminal 125, 127. The height is spaced about $ microns. 67 201218416 As illustrated in Figure 62, the first nitrogen is then grown or deposited, such as by, for example, but not limited to, electro-destructive enhanced chemical vapor deposition (PECVD) nitrogen or oxynitride. a passivation layer 135, typically up to about 35 microns to ^ microns, or more particularly a thickness of 0.5 microns. The unnecessary niobium nitride regions are then removed using suitable or standard mask and/or photoresist layers and etching known in the art, such as to clean the top of the metal layer 1〇2B, which will Forming a first terminal 125. After purification, an appropriate or standard mask and/or photoresist layer, as known or to be known in the art, and (iv), such as s 63, are passed through the portion as previously described. The GaN heterostructure (into but not 70 passes through the 11+ type GaN layer 110) (typically about 2 microns to 3.5 microns in depth in an exemplary embodiment) is singulated (4) and formed above The singulated channel 1 5 5. The subsequent substrate removal and singulation are described below with reference to Figures 64, 65, 67 * 69. Various variations of the method of fabricating the diode 100-100L are in accordance with the teachings of the present invention It will be apparent that all variations are considered equivalent and within the scope of the invention. In other exemplary embodiments, the (iv) 155 formation and &gt; (nitride) passivation layer formation may be earlier or later in the device fabrication process. For example, 5, which can be later in the manufacturing process The trench 155 is formed after the formation of the metal layer 1 is fine, and the exposed substrate 1G5 may be left or may be subjected to a second passivation. For example, 'may be formed earlier in the manufacturing process, such as after (10) mesa etching The trench 155, which in turn deposits a (nitride) passivation layer Bp, in the latter embodiment, maintains 68 201218416 planarization during the remainder of the device fabrication process, and the passivated trench 15 5 can be oxide, photoresist or other material. The fill (deposited layer, followed by a photoresist mask and an etched or unmasked silver engraving process to remove unnecessary areas) may be filled with a resist (and may be refilled after the metal contacts i 2〇A are formed). In another embodiment, the deposition of tantalum nitride 3 (followed by a masking and etching step) can be performed after GaN mesa etching and prior to deposition of the metal contacts 120 A. Figure 64 illustrates an exemplary 矽 wafer of a plurality of diodes 1 〇〇 丨〇〇 L of the viscous to holding device 16 (such as a holding, handling or holder wafer) Sectional view. Figure 65 is a cross section illustrating an exemplary embodiment of an exemplary diode sapphire wafer 15A adhered to a holding device 160. As illustrated in Figures 64 and 65, any known commercially available wafer adhesive or wafer bond 165 will be used to contain a plurality of unreleased diodes 1 〇〇-100L (for general purposes without explanation) Any significant feature details of the diode wafer 150, 15A are fabricated on the diode wafer 15〇, i5〇A: the pole body 1G (the first side of the M sail is adhered to the holding device 160 ( Such as a wafer holder. As explained and as described above, it has been used during wafer processing, such as via etching in each diode 1 (M: singularization or individualization, V-la The 55 picker uses the singulated or individualized channels (7) 155 to cause the eccentricity of the diodes to be removed without mechanical processing (such as tapping). As illustrated in Figure 64, the two are adhered to the holding device 160. At the same time, the -4 wafer 〇 '4 side (odd surface) 180 is etched (for example, thirsty or dry etching) or mechanically etched or etched If M ^ I to a certain level ( Explained by the dotted line), the eclipse J submechanical grinding and polishing to the turbulence + road trench 155, or leaving some other 69 201218416 substrate, 3 Xuanqi The substrate can then be removed via, for example, but not limited to, etching. _ When fully etched or ground and polished, or sufficiently etched and ground and polished (and/or along with any other etching), the individual diodes i The 〇〇_丨〇 have been released from each other and released from any remaining diode wafer 150 while still being adhered by adhesive 165 to holding device 160. As illustrated in Figure 65, the diode wafer 150A is still attached. The second side (back side) 18 of the diode wafer 150A is then exposed to laser light (illustrated as one or more laser beams 162), which is followed by the wafer 15 while the holding device 16 is being held. 〇 之 sapphire 106 cut GaN substrate 1〇5 (illustrated by dashed line) (also known as laser stripping), and then any other chemical mechanical polishing and any desired etching (such as wet or dry etching) The individual diodes 1 〇〇 1 〇 are released from each other and released from the wafer 15 〇 A, while still being adhered by the adhesive 丨 65 to the holding device 160. In this illustrative embodiment, the grinding can be followed by / or polish the wafer 1 500 A and reuse. Epoxy beads are also applied around the perimeter of wafer 150 (not separately illustrated) to prevent non-diode segments from being released from the wafer edge to the diode during the diode release process discussed below (丨〇〇_丨〇〇L) in the fluid. Figure 6 is a cross-sectional view showing an example of an exemplary diode 1 〇〇j adhered to the holding device. In the singularized diode 1 〇〇 _ 丨〇 〇κ (as described above with reference to Figures 64 and 65), and while the diode ι〇〇_1 〇〇 κ is still adhered to the holding device 160 by the adhesive 165, 'exposing the diode ι〇〇_1 The second side (back) of 〇〇κ. As illustrated in FIG. 66, a second side (back) metal layer 122 and a dipole may then be formed, such as via vapor deposition (tilting to avoid filling the trenches 15 5) deposition of the metallization layer to the second side (back side) Body 1〇〇j concrete real 70 201218416 . Example. As also illustrated, the diode 100J has an ohmic contact with the n + -type GaN layer 110 and is in contact with the second side (back) metal layer 122 - a central through via 131 for the n + -type GaN layer 11 and The two sides (back side) conduct current between the metal layers I22. The exemplary diode 101 is quite similar to the exemplary diode iooj, which has a second side (back) metal layer ι 22 to form the second terminal 127. As mentioned previously, the second side (back) metal layer 122 (or any of the substrate 1〇5 or each of the through vias 131, 133, 134) can be used in the devices 300, 300A, 300B, 300C, 300D , 720, 730, 760 are electrically connected to the first conductor 31 以 to energize the diode 100-100K. Figure 67 is a cross-sectional view showing an exemplary twelfth polar body embodiment of adhesion to the holding device 16 之前 prior to back metallization. As illustrated in Figure 67, the diodes in the exemplary process are singulated, wherein any substrate 105, 051 A is exposed as described above and also in a surname step (eg, wet or dry etch), exposing n+ The surface of the GaN layer 11 and vias 136 leaves a composite GaN heterostructure having a depth of from about 2 microns to 6 microns (or more specifically from about 2 microns to 4 microns, or more specifically about 3 microns). Next, using the prior art or standard mask and/or photoresist layer and stencil in the art, such as depositing a metallization layer to the second side (back side) via ruthenium plating, electroplating or vapor deposition, forming a first Side (back) metal layer 122 and diodes 〇〇 κ specific examples, as illustrated in FIG. In an exemplary embodiment, metal layer 122 is flared, as illustrated in Figure 21, having a major axis width of from about 12 microns to about 16 microns, a minor axis width of from about 4 microns to about 8 microns, and a depth of From about 4 microns to 6 microns, or a major axis width thereof, more particularly about 14 microns, a short axis width 71 201218416 degrees of about 6 microns ' and a depth of about 5 microns, and which comprises about 1 Å of titanium, about 4.5 micron aluminum, about 0.5 micron nickel, and 100 nm gold. As also explained for the one body 1 〇〇K, the initially shallow center via is now in ohmic contact with the n+ type GaN layer 110 and in contact with the second side (back) metal layer 122 for the n+ type. A through hole 136 that conducts current between the GaN layer 110 and the second side (back) metal layer 122. As previously mentioned, for this exemplary diode 100K embodiment, the diode 100K is then flipped or inverted, and the second side (back) metal layer 1Z2 forms the first terminal 125 and can be used in the device 300, 300A , 300B, 300C, 300D, 720, 730, 760 form an electrical connection with the second conductor 320 to energize the diode ι κ. Figure 69 is a cross-sectional view showing an exemplary embodiment of an exemplary eleventh diode 100L adhered to a holding device. As illustrated in Figure 69, an exemplary diode 100L is singulated, wherein any substrate 105, 105 移除 is removed as described above and in an etch step, exposing the surface of the η+-type GaN layer 11 , leaving a depth of about A composite GaN heterostructure of 2 microns to 6 microns (or more particularly about 3 microns to 5 microns, or more specifically about 4 microns to 5 microns, or more specifically about 45 microns). 13 After the monomerized diode 100_100L, it can be used to form a diode ink&apos; which is discussed below with reference to Figures 74 and 75. It should also be noted that various surface geometries and/or textures may be fabricated for each of the diodes 1〇〇_1〇〇L to facilitate internal reflection reduction and light extraction during construction (4). . Various surface geometries such as &amp; can also have any of the various surface textures previously discussed with reference to FIG. Figure 104 is a perspective view illustrating an exemplary illuminating or light absorbing region of the shape of the surface of the surface of the solar cell 100 184 , , , , , , , , , , , 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 Concentric rings or super-annular shapes. I hangs the geometry to the diode 1 before or after the adder surface metal 122, via the appropriate or standard mask and/or photoresist layer and etching known or to be known in the art. In the second side (back). Figure 〇5 is a perspective view of an exemplary second surface geometry exemplifying f-lighting or light absorbing regions, constructed as a plurality of substantialities on the surface of a diode 1 κ upper luminescence (or light absorbing) The upper curved trapezoidal shape. The geometry is also typically etched to the second side of the diode 100 之前 before or after the back metal 122 is added, also via a suitable or standard mask and/or photoresist layer and etch known or to be known in the art. (back). Figure 106 is a perspective view illustrating an exemplary third surface geometry of an exemplary illuminating or light absorbing region constructed as a diode! The lower (or bottom) illuminating (or light absorbing) surface of the 〇〇L has a plurality of substantially curved trapezoidal shapes. Figure 107 is a perspective view illustrating an exemplary fourth surface geometry of an exemplary illuminating or light absorbing region constructed as a substantially star on the lower (or bottom) illuminating (or light absorbing) surface of the diode 1 〇〇L Shape. Figure io 8 is a perspective view illustrating an exemplary fifth surface geometry of an exemplary illuminating or light absorbing region constructed as a plurality of substantially on the lower (or bottom) illuminating (or light absorbing) surface of the diode 100L. Parallel rod or stripe shape. The geometric shapes are also typically engraved into the _ side (back side) of the diode 1 via appropriate or standard masks and/or photoresist layers and etched as known or to be known in the art. A portion of the substrate removal process and/or the diode singulation process previously discussed with reference to FIG. 73 201218416 Figures 70, 71, 72 and 73 Gong Kil a % πη Knife another! A flow chart for the exemplary first, second, third, and fourth methods of the diode 100-fox is provided for use, and an outline of the application is provided. It should be noted that multiple of these methods can be performed in any of a variety of orders, and the steps of the exemplary methods can be used in other exemplary methods. Therefore, each method will generally involve the manufacture of two (four) (10) sails, rather than the manufacture of specific diodes H) 0-UH) L | and those skilled in the art should know which steps are available. Mix and match to form any selected diode i〇〇_i〇〇l specific example. Referring to Figure 70', starting from the initial step 240, an oxide layer is grown or deposited on a semiconductor wafer, such as a Shihua wafer (step 245). The surname oxide layer (step 250) is such as to form a grid or other pattern. Growing or depositing a buffer layer and a light-emitting or light-absorbing region (such as a GaN heterostructure) (= step 255), followed by etching to form a mesa structure of each of the diodes 1〇〇_1〇〇L (step 260), followed by etching The wafer 15 is formed with a via trench in the substrate 105 of each of the diodes 1 (step 265). Next, one or more 2 generastrative layers are deposited to form respective diodes 10 (Metal contacts and vias of M00L (step 270). Then, the monolithic channel is etched between the diodes i〇〇-i〇OL Ditch (step 275). Next, a passivation layer is grown or deposited (step 28). Then bumps or protruding metal structures are deposited or grown on the metal contacts (step 285) and the process can end, returning to step 29〇. It is noted that the plurality of steps in the manufacturing steps can be performed by different entities and reagents, and the method can include other variations and ordering of the steps identified above. Referring to Figure 71 'Starting at Start Step 500' A relatively thick GaN layer (eg, 7 microns to 8 microns) is grown or deposited on a wafer (eg, Zhibao 74 201218416 皦. Stone wafer 1 50A) (step 505). Growth or deposition of luminescent or light absorbing regions (such as GaN) a heterostructure) (step 510), followed by etching to form a mesa structure of each of the diodes 100-100L (on the first side of each of the diodes i〇〇_1〇〇L) (step 515). The circle 150 is formed in the substrate 105 of each of the diodes 1〇〇_1〇〇L or a through or deep via trench and a singulated trench (step 520). The seed layer is then typically deposited by using any of the methods described above (step 525), followed by other metal deposition to deposit one or more a metallization layer to form a through via of each of the diodes 〇〇_1 〇〇 L "which can be a center, a periphery or a periphery through the via holes (131, 134, 133, respectively). Forming one or more metal contacts to the GaN heterostructure (such as the doped QaN layer II5 or the n+ type GaN layer 11〇) (step 53S) and forming any other current distribution metal (eg, 12〇A, 126) ( Step 54). Next, a passivation layer is grown or deposited (step 545), wherein a certain region is etched or removed as previously described and illustrated. Next, a bump or protruding metal structure U20B is deposited or grown on the metal contact) (step 55〇). Next, attach the wafer 15-8 to the holding wafer (step 555) and remove the sapphire or other wafer (eg, cut by laser) to singulate or individualize the diode ^ 1 (step 560). The metal is then deposited on the second side of the diode 1〇〇i〇〇l The second side (back) metal layer 122 is formed on the back side (step 565), and the I method can be terminated, and the process returns to step 57. It should also be noted that the plurality of steps in the manufacturing steps can be performed by different entities and reagents. Performing, and the method may include other variations and ordering of the steps discussed above. Referring to Figure 72, starting from the initial step _, growing on the wafer 15 (such as 75 201218416 sapphire crystal 15 〇 A) or A relatively thick G is deposited (e.g., 7 microns to 8 microns) (step 605) to grow or deposit a luminescent or light absorbing region (such as a GaN heterostructure) (step 61A). Depositing a metal to form - or a plurality of heterojunctions with GaN, such as with a ρ + -type GaN layer 115, as shown in Fig. 45, a metal junction (step 6 15). A tactile illuminating or light absorbing region (such as a GaN heterostructure) and a metal contact layer (119)' form a mesa structure of each of the diodes 1 - 1 sail (on the first side of each of the diodes 100-100L) (Step 62). Depositing a metal to form one or more metal contacts to the GaN heterostructure (such as contact with the n+ type metal of the n+ type (4) layer (1)

Layer 9 * illustrated in Figure 47) (step 625). Next, the insect wafer 15〇A 形成 is formed in the substrate (9) of each of the _ pole bodies (10), or a plurality of through- or deep-conducting trenches and/or singulated trenches (step (4)). Then, using any of the metal deposition methods described above, one or more metallization layers are deposited to form a through via of each of the diodes 100-100L, which may be through the via hole at the center, the periphery or the periphery (the blade is 131, 134, 133). Metal is also deposited to form one or more

Metal junctions with GaN heterostructures (such as with P+ type GaN layer 11 5 or with n+ type GaN layer 110), and any other current distribution metal (e.g., 12 AA 126) are formed (step 640). If the monolithic trench has not previously been formed (in step 630), the singulated trench is etched (step 645). The purification layer is then grown or deposited (step 65A), wherein the regions are recited or removed as previously described and illustrated. The bumps are then deposited or grown on the metal contacts or the metal, ''. Construct (l2〇B) (step 655). Next, the wafers 150, 150A are attached = holding the anode (step 66), and the sapphire or other wafers (for example, laser cut or back grinding and polishing) are removed to singulate or individualize. Pole 76 201218416 Body 1 (HM_Step 665) ° Next, a metal is deposited on the two sides (back side) of the diode fox to form a second side (back) conductive (eg metal) layer 122 (step 67 〇) And the method can end, returning to step 675. It should also be noted that the steps of $ 炙 ^ ^ in such manufacturing steps may be performed by different entities and reagents' and the method may include other variations and ordering of the steps discussed above. Referring to FIG. 73', starting from the initial step 611, a relatively thick GaN layer is grown or deposited on the buffer layer 145 of the wafer 15 (such as sapphire wafer 150A) or the germanium wafer 150 (eg, 7 micrometers to 8 microseconds). (Step 6U) e-growth or '/a luminescence or light absorbing region (such as a GaN heterostructure) (step 616). The metal is deposited to form one or more metal contacts to the heterostructure (such as with the P+ type GaN layer 115, as illustrated in Figure 45) (step 621). Then etching a light-emitting or light-absorbing region (such as a GaN heterostructure) and a metal contact layer (119) to form a mesa structure of each of the diodes 1 丨〇〇 丨〇〇 L (on the first side of each of the diodes 100-100L) Up) (step 626). For the diode 1 00K embodiment, the GaN heterostructure is then etched to form the central via trench of each diode 100K (step 63 1 ), and in other cases step 63 1 may be omitted. One or more metallization layers are then deposited using any of the metal deposition methods described above to form the central vias 136 of each of the diodes 100K or the metal contacts 1 28 of the diodes 100L (step 636). For the diode 100 00K specific example, a passivation layer 13 5 A is then grown or deposited (step 641), wherein certain regions are etched or removed as previously described and as illustrated, and in other cases step 641 may be omitted. A metal is also deposited to form one or more metal contacts to a GaN heterostructure such as p + -type GaN layer 115, such as metal 77 201218416 ^ 120B or metal I 12〇A and 12〇b (step μ. If previously If the singulated trench is not formed, the singulation channel is singulated (step 651). Next, a passivation layer is grown or grown (step 656), wherein the region is etched or removed as previously described and illustrated. Note that for the manufacture of a diode! sail, steps 656 and 651 are performed in reverse order, which is followed by purification and subsequent engraving of the singulation channel. The wafers 15〇, 15〇A are then attached to the holding wafer. (Step 661), and removing ruthenium, sapphire, or other wafers (eg, via laser cutting or back grinding and polishing) to singulate or individualize the diodes (M〇OL (^ 666), such as via The button is removed to remove any other specific examples for the diode (10) κ, and then the metal is deposited on the second side (back side) of the second polar body i 〇〇κ to form a second side (back) conductive (eg metal) layer 122 (step 671), and the method can end. Return to step 676. Also pay attention to the system. The various steps in the fabrication steps can be performed by different entities and reagents, and the method can include other variations and ordering of the steps discussed above. For example, steps 611 and 612 can be performed by a specialized supplier. To illustrate the cross-sectional view of the individual diodes 1〇〇_1〇〇L (also without any significant feature details for the purposes of the illustration), the diodes are no longer in the diode wafer 150, 15〇A are coupled together (since the second side of the diode wafer 150, 150A is now ground or polished, cut (laser stripped) and/or etched to fully exposed singulation (individualized) The trench 155) is adhered by the wafer adhesive 165 to the holding device 16 and suspended or immersed in the device 175 containing the wafer adhesive solvent 170. Any suitable device 175, such as a Petri dish, can be used. (Petri cardiacization), one of the exemplary methods uses polytetrafluoroethylene (PTFE or Teflon) vessels 78 201218416 175. Wafer adhesive solvent 17 〇 can be any commercially available wafer adhesive Solvent or wafer binder remover, including (not limited to For example, from Rolla,

Missouri USA's Brewer Science obtained 2-dodecene wafer adhesion, '. The agent remover' or any other relatively long chain alkane or olefin or short chain heptose or glucan will typically adhere to the pole of the holding device 160 at room temperature (eg, at a temperature of about 65°F to 75T or higher). The body 100-1 00L is immersed in the wafer adhesive solvent 170 for about 5 to about 5 minutes, and in an exemplary embodiment, sonication can also be performed. As the wafer adhesive solvent i 7 〇 dissolves the adhesive 165, the polar body 10〇_1〇〇 [separates from the adhesive 165 and the holding device 16〇 and is mostly or generally individually or in groups or clumps. Sink to the vessel 1 75 bottom 4. § When all or most of the diodes l〇〇_1〇〇L have been released from the holding device 16〇 and deposited to the bottom of the vessel 175, the vessel 175 is removed from the holding device 160 and a portion of the currently used wafer adhesive solvent 17 Hey. Then add the wafer adhesive solvent 170 (about 12〇1111 to 14〇ml), and usually stir the mixture of the wafer adhesive solvent 17〇 and the diode 1 00-1 00L at room temperature or higher. (for example, using a sonic processor or an impeller mixer) for about 5 to 15 minutes, and then again making the diode 1〇〇_i〇〇L to the bottom of the orphan 175. This process is then generally repeated at least once again so that when all or most of the diodes are removed (M〇〇L has settled to the bottom of the vessel 175, the vessel 175 is removed - part of the currently used wafer adhesive solvent 17 () Then add (about 丨 to 140 ml) wafer adhesive solvent 17 〇, and then stir the wafer adhesive solvent 17 〇 and the diode (10)-ship mixture about 5 to 15 at room temperature or more. Minutes, and then again precipitate the diode 100-100L to the 175 of the utensils 175, the bottom of the heart and remove - part of the remaining wafer stick 79 201218416 film 彳 剂 1 1 70. At this stage, generally has The diode i 〇〇-丨〇〇L removes any residual wafer adhesive j 65 in the foot, or repeats the wafer adhesive solvent 17〇 process until it is no longer possible to interfere with the diode i〇〇_l印刷L printing or functioning ~ ~ Wafer adhesive solvent 丨 70 (containing dissolved wafer adhesive 165) or any other solvent, solution or other discussed below may be removed in any of a variety of ways Liquid. For example, ^' can be vacuumed, pumped, pumped, pumped, etc. For example, removing the wafer dot-solvent &quot;70 or other liquid via a pipette can also be exemplified by, for example, using a sieve or a multi-cut membrane transition diode with a suitable opening or micropore size. A mixture of wafer adhesive solvent 170 (or other liquid) to remove the wafer adhesive solvent 17 〇 or other liquid. It should also be mentioned that the ruthenium diode ink (and the &quot;electricity discussed below) All of the various fluids used in the ink) to remove particles greater than about i0 microns. The one-electrode ink embodiment comprises the following composition: a plurality of diodes 100-100L; and a solvent. Daegu 八 3^7, and the mouth of the hole 〖 曰 曰 曰 黏 黏 溶剂 溶剂 i i 〇 "ΙΡΑ. Day 4 2: J )) is added to the mixture of the Japanese yen adhesive solvent 1 70 and the diode 100-100L, and the product is then used at room temperature (usually equivalent) Higher temperature) stir ΙΡΑ, wafer adhesive dissolves &quot;川和二Body (10) - mixture of ancestors for 5 to 15 minutes, and then again make the second pole 80 201218416 body ship Shen Dian to the bottom of the vessel 175 and remove - a mixture of partial core disk round adhesive solvent 170. Add Π &gt; Α (120 Ml to 14 〇ml), and repeat the process twice or twice for more than 4 people, that is, the mixture of IPA' wafer adhesive solvent m and the diode fox is generally stirred at room temperature for about $ to 15 minutes. Then, the diode 1 is again forged into the bottom of the vessel 175 to 'remove a portion of the IPA disk H1 μ ', the mixture of the Japanese yen adhesive solvent 170 and add IPA. In the case of your 丨+ 目 jh* & 例 例 example, the resulting mixture is from about 100 ml to 11 〇ml IPA blood white four 4 曰 π from about four million wafers 〇万一极体100-100L· (each yen is four 吋 0 丨 〇 〇 〇 970 970 970 970 970 970 970 970 100 100 100 100 100 100 100 100 100 100 100 970 970 970 , , , , , , , , , , , , , , , , Larger container (such as PTFE cup

In the bottle, it may include, for example, using ΤρΔ$, A dan to re-wash the diode with the IPA into the bottle. Equivalently using one or more lysis swords, you 丨 1 / 7 悝 剤, such as (but not limited to): water; alcohol, such as methanol, ethanol, n-propanol (Γ Npa v 6 _!·&lt;· , ") (£_&lt; 1-propanol, 2-propanol (I pa ), 1-decyloxy-2·propanol), buty (Taiwan 4J* 1 Dingzi (including 1-butanol, 2-butanol (isobutanol)), pentanol (including 1-pentanol, 2-luene, 1.0 z-pentanol, 3-pentanol), octanol, n-octanol (including 1-octanol, 2 - octanol, 3 in 553⁄4, . 3-octyl), tetradecyl alcohol (THFA), cyclohexanol, rosin alcohol; ether, such as methyl 7 A _ T-ethyl ethyl ether, diethyl ether, ethyl propyl Ether and polyether; 6) 'such as acetic acid B, the purpose of the - 酿 鲛 鲛 鲛 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Glycerin, glycerol acetate; glycol, such as ethylene glycol, diethylene glycol, jujube 7 __ polyglycol, propylene glycol, dipropylene glycol, glycol test, glycol acetate acetate: basic 3S 匕 ^ human - 夂酉Days, such as propyl carbonate; glycerol, such as glycerin; acetonitrile 'tetrahydro D 夬 slightly f TWT?, nipple (T HF ), dimethylformamide (DMF), N-mercaptocaramine (NMF), -w π n /heart)-methanesulfoxide (DMSO); and mixtures thereof. The mixture of the diode 100-100L and the solvent (money a TDA, 劏 (old as IPA) is a diode 81 201218416 = the first of the water - the embodiment is as the above example i, and can be used as an independent component ▲, for example For subsequent modification or also for use in printing, for example, in other exemplary embodiments of the scented 々丨 Γ / 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The resulting mixture was a φ ° «primary intermediate mixture which was further modified as described below to form a diode ink for printing. In each of the illustrative embodiments, the first (or second) solvent is selected based on at least. The first characteristic of the solvent is its =, agent or adhesive viscosity modifier (such as propylmethylcellulose resin, methoxypropyl methylcellulose resin or other cellulose resin or methyl 2-dimensional resin) The ability or ability to dissolve viscosity modifiers or adhesion viscosity agents. The second characteristic or characteristic is its evaporation rate, which should be slow enough to allow sufficient retention of the screen ink (for screen printing) or other printing parameters. In various exemplary embodiments, the exemplary evaporation rate is less than 1 (&lt;;1 'relative rate compared to butyl acetate) or more particularly 0.0001 to 0.9999 ° diode ink. Example 2: Contains the following composition Matter: Multiple diodes 100-100L; and viscosity modifier. Diode Ink Example 3: A composition comprising: a plurality of diodes 100-100 L; and a solvating agent. Diode Ink Example 4: 82 201218416 * Contains the following composition: a plurality of diodes 100-100L; and a wetting solvent. Diode Ink Example 5: A composition comprising: a plurality of diodes 100-100 L; a solvent; and a viscosity modifier. Diode Ink Example 6: A composition comprising: a plurality of diodes 100-100 L; a solvent; and an adhesion viscosity modifier. Diode Ink Example 7: A composition comprising: a plurality of diodes 100-100L; a solvent; and a viscosity modifier; wherein the composition is opaque when wet and substantially optically transmissive when dry or otherwise It is transparent. Diode Ink Example 8: A composition comprising: a plurality of diodes 100-100 L; a first polar solvent; 83 201218416 viscosity modifier; and a second non-polar solvent (or rewetting agent). Diode Ink Example 9: Contains the following composition: a plurality of diodes l〇〇-l〇〇L, any size of each of the plurality of diodes i〇〇_i〇〇l All are less than 450 μm; and solvent. Diode Ink Example 1 〇 : A composition comprising: a plurality of diodes 100-100L; and at least one substantially non-insulating carrier or solvent. Diode Ink Example 11: A composition comprising: a plurality of diodes 100-100L; a solvent; and a viscosity modifier; wherein the composition has a dewetting or contact angle greater than 25 degrees or greater than 40 degrees .

Referring to the diode ink embodiment, a variety of exemplary diode ink compositions are within the scope of the present invention. In general, as in Example ,, a liquid suspension of a polar body (100-100 L) comprises a plurality of diodes (100-1 00 L) and a first solvent (such as the IPA discussed above or below) N-propanol, 1-methoxy-2-propanol, dipropylene glycol, decyl octanol (preferably, generally n-octanol), or diethylene glycol); as in Example 2, two M 84 The liquid suspension of 201218416 (100-100L) comprises a plurality of diodes (iOO-lOOL) and a viscosity modifier (such as the viscosity modifier discussed below) which may also be an adhesion viscosity modifier as in Example 6) And as in Examples 3 and 4, the liquid suspension of the diode (100-100L) comprises a plurality of diodes (100-100 L) and a solvating or wetting solvent (such as in the second solvent discussed below) One of them 'for example, a dibasic ester). More specifically, such as in Examples 2, 5, 6, 7, and 8, the liquid suspension of the diode (1 〇〇 _ 1 〇〇L) comprises a plurality of diodes (100-100 L) (and / or a plurality of diodes (100-100L) and a first solvent (such as n-propanol, 1-octanol, 1-decyloxy-2-propanol, dipropylene glycol, rosin or diethylene glycol)) And a viscosity modifier (or equivalently a viscous compound, an adhesive, a viscous polymer, a viscous resin, a viscous adhesive, a thickener, and/or a rheology modifier) or an adhesive viscosity modifier (discussed in more detail below), for example, but not limited to, the viscosity of the diode ink at room temperature (about 25 ° C) is from about ι,000 centipoise (cps) to 25,000 cps (or at refrigeration temperature ( For example, 5. The viscosity under 〇 to 1 〇〇 c) is from about 20,000 cps to 60,000 cps), such as the E1 〇 viscosity modifier described below. Depending on the viscosity, the resulting composition may be equivalently referred to as a diode or other two-terminal integrated circuit liquid suspension or colloidal suspension, and reference herein to liquid or colloid is understood to mean and Including the other. In addition, the resulting viscosity of the diode ink will generally vary depending on the type of printing process to be used and may also vary depending on the composition of the diode (such as Shishi substrate 1 〇 5 or GaN substrate 1 () 5). For example, a diode (10) sail has a stone substrate H) 5 &lt; a diode ink for screen printing can have a dot of about _ centipoise (CpS) m000 cps at room temperature. Or at room temperature; 85 201218416 may more particularly have a viscosity of from about 6,000 centipoise (cps) to 15, cps, or more particularly about 6,000 centipoise (cps) to 15, at room temperature. The viscosity of cps, or more particularly at room temperature, may have a viscosity of from about 8, centipoise (cps) to 12,000 cps, or more particularly about 9 centipoise (cps) at room temperature. Ll, the viscosity of CpS. In another example, the diode 1 〇〇_1 〇〇 L having a GaN substrate 1 〇 5 for screen printing of the diode ink may have a temperature of about 10,000 centipoise (cps) to 25, OOO cps at room temperature. The viscosity, or more particularly at room temperature, may have a viscosity of about 15, centipoise (cps) to 22,000 cps' or more particularly about 17500 to 500 centipoise (cps) to 20,500 cps at room temperature. Viscosity, or more particularly at room temperature, may have a viscosity of from about 18, centipoise (cps) to 20, 〇〇〇CpS. Also for example, the diode i 〇〇_1 〇〇 L has a ruthenium substrate 205. The diode ink for fast-drying printing may have a range of about 1,000 centipoise (cps) to 1 室温 at room temperature. , 〇〇〇cps viscosity, or more particularly at room temperature, having a viscosity of from about 1,500 centipoise (cps) to 4,000 cps, or more particularly about 1,700 centipoise (cps) at room temperature. Viscosity to 3,000 cps' or more particularly at room temperature may have a viscosity of from about 1,800 centipoise (cps) to 2,200 cps. Also for example, a diode ink having a GaN substrate 1 〇 5 for fast-drying printing may have about 1 centipoise (cps) at room temperature. Viscosity to 10,000 cps, or more particularly at room temperature of from about 2,000 centipoise (cps) to 6,000 cps, or more particularly from about 2,500 centipoise (cps) to 4,500 cps at room temperature, Or more particularly at temperatures up to about 2,000 centipoise (CpS) to 4, 〇〇〇CpS. Viscosity can be measured in a variety of ways. For purposes of comparison, the various viscosity ranges stated and/or claimed herein are those using a Brookfield viscometer (available from Brookfield Engineering Laboratories, Middleboro Massachusetts, USA) of approximately 200 Pa (or The shear stress is typically from 190 Pa to 210 Pa, which is about 25 in the water jacket. Under the arm, the spindle SC4-27 is measured at a speed of about 1 rpm (or more typically 1 to 30 rpm, especially for, for example, but not limited to, refrigerated fluid). One or more thickeners (as viscosity modifiers) may be used, such as, but not limited to, clays, such as chain bentonite clay, bentonite clay, organically modified clay; sugars and polysaccharides, such as guar gum, three scented gums Cellulose and modified cellulose 'such as hydroxydecyl cellulose, decyl cellulose, ethyl cellulose, propyl decyl cellulose, decyloxy cellulose, methoxy decyl cellulose, decyloxy Propyl methylcellulose, hydroxypropyl decyl cellulose, carboxymethyl cellulose, ethyl cellulose, ethyl hydroxyethyl cellulose, cellulose ether, cellulose ether, polyglucosamine; polymer , such as acrylate and (meth) acrylate polymers and copolymers; glycols, such as ethylene glycol, diethylene glycol, polyethylene glycol propanol-propanol, alcohol test, glycol test acetic acid g; aerosol-like cerium oxide (such as Cabosil), cerium oxide powder; and modified urea, such as BYK8420 (available from BYK Chemie GmbH); and mixtures thereof. Other viscosity modifiers can be used, as well as the addition of particles to control the viscosity, as described in the patent application publication No. 2, 3, 〇〇 9 f, to Lee et al. Other viscosity modifiers discussed below with reference to dielectric inks may also be used including, but not limited to, polyvinylpyrrolidone, polyethylene glycol, polyvinyl acetate (PVA), polyvinyl alcohol, polyacrylic acid, polyethylene oxide. Polyvinyl alcohol condensate (PVB); diethyl- 醢- 0 ^ w - known as propanol, 2-ethyl oxazoline. 87 201218416 Reference Diode Ink Example 6, the liquid suspension of the diode (1 〇〇 _ 1 〇〇l) may further comprise an adhesion viscosity modifier, ie any of the above-mentioned viscosity modifiers having additional adhesion characteristics. The viscosity modifier adheres the diode (100-100L) during manufacture (eg, printing) of the device (300, 300A, 300B, 300C, 300D, 700, 700A, 7_' 720 ' 730 ' 740, 750, 760, 770) To the first conductor (eg 31〇A) or to the substrate 305, 305A, and then further to provide the diode (1〇〇_1〇〇L) to the device (300, 300A, 300B, 300C, 300D, 700) Infrastructure (eg, polymer) at appropriate locations in 700A, 700B, 720, 730, 740, 750, 760, 770) (when dried or cured). While providing the adhesion, the viscosity modifier should also have some ability to resist the wetting of the contacts (such as terminals 125 and/or 127) of the diode (1〇〇1〇〇L), such adhesion, The viscosity and the wetting resistance are one of the reasons for using methylcellulose, methoxypropylmercaptocellulose or hydroxypropylmethylcellulose in each of the exemplary embodiments. Other suitable viscosity modifiers can also be selected based on experience. Other characteristics of the viscosity modifier or adhesion viscosity modifier are also applicable and are within the scope of the present invention. First, the viscosity modifier should prevent the suspended diode U0CM00L from precipitating at the selected temperature. Secondly, the viscosity modifier should contribute to the manufacturing equipment (300, 300 Α, 300 Β, 3 〇〇 C, 3 〇〇 D, 700, 700 Α, 700 Β, 720, 730, 740, 750, 76 〇, 77 〇) The diode (100-100L) and the printed diode (iOiMOOL) are oriented in a uniform manner during the period. Third, in some specific examples, the viscosity modifier should also be buffered or otherwise embossed during the printing process, and the base diode (100-100L), while in other specific examples, 'additional affair Particles (88 201218416, such as broken beads), va _ protect the diode 1 〇 0_ 00L during the printing process (diode ink examples 17-19 discussed below). Reference Electrode Ink Examples 3, 4 and 8, the diode (100-1 00L) step comprises a second solvent (Example 8) or a solvated hydrazine (Example 3) or a wetting solvent (Example 4) Many of the embodiments are discussed in more detail below. After printing the diode::water and the diode ink is dried during subsequent device fabrication, the (first or second) solvent is selected as a wetting agent (equivalently a solvating agent) or a rewetting agent to aid On the first conductor (for example, 3l〇A, which may include a conductive polymer such as silver ink, carbon ink or silver ink disk nitrate | "fire ink mixture") and diode l〇〇_1〇〇L (via substrate 2. An ohmic contact between the via structure (131, (1), [Μ] and/or the second side metal layer U2, as illustrated in FIG. 83), such as a polar resin solvent, including, for example, but not limited to - or a plurality of enthalpy. For example, when the diode ink is printed on the first guide 31":: the sizing agent or solvating agent partially dissolves the first conductor 31 〇; with or - the solvating agent subsequently dissipates 'The first conductor 31 is hardened again and comes into contact with the diode (100-100L). Diode (10 (M〇〇L) liquid or colloidal suspension = third solvent 'such as deionized water, and this article Percentage of percentage; : is the third solvent (such as water), and all the percentages &amp;= gauges are not Volume or some other metric. Also note: Ink:: Floats can be mixed in a typical atmosphere without the need for a second gas composition or other contained or filtered environment., 89 201218416. Also based on solvent The polar selection solvent. In an exemplary embodiment, the first solvent (such as an alcohol) may be selected as a polar or hydrophilic solvent to facilitate fabrication of the device 300, 300A, 3〇〇B' 3〇〇c, 3〇 〇D, 7〇〇, 7〇〇8, 7〇〇B, 720, 730, 740' 75G, 760, 770 period diode (1Q(M〇〇l): other conductors (such as 310) are resistant to moisture, At the same time, it can be dissolved in the viscosity-adjusting agent or dissolve the viscosity modifier. Another suitable property of the exemplary diode ink is illustrated by Example 7. = This illustrative example, the diode ink is wet during printing 1;= to facilitate various printing processes, such as alignment. However, a wide or cured diode ink at the selected wavelength, 霄 is pre-transmitted or otherwise permeable + disturbed by a diode ( iOO-lOOL) can be produced in a qualitative example. However, the other ink may be transparent. The bulk ink may also have substantially optical transmittance. Another characteristic of the exemplary two-pole (100-100L) is based on the size of the diode, as in Example 9. Any size of the ancestor is generally small, wherein the diode is more particularly less than about 2 〇〇 microns, and it is 50 μm and any of its dimensions are micrometers, and any of its dimensions + dimensions are more particularly less than about 100 J text brothers * small furnace v S η especially less than 3 〇 micron. In the illustrated example 7 meters, and any size more than 100 - the width of the ancestors - generally approximate to the next specific example, the diode More particularly from about 20 microns to 3 microns, from meters to 50 microns, or width meters, or from about 25 microns in diameter to a horse's height of about 5 microns to 25 micro pairs of apex measurements, and a height of 8 microns^ = face side rather than vertex 15 cm or twist 9 microns 90 201218416 to 12 microns. In some exemplary embodiments, the height of the diode 100-100L that does not include the metal layer 120B forming the bump or protruding structure (ie, the height of the side 121 including the GaN heterostructure) is approximately 5 microns to 15 microns' or more particularly from 7 microns to 12 microns, or more particularly from 8 microns to 11 microns, or more especially from 9 microns to 1 inch, or more especially from less than 10 microns to 30 microns, forming bumps or protrusions The height of the metal layer 120B of the structure is generally from about 3 microns to about 7 microns. In other exemplary embodiments, the diode (eg, 100L) does not include the height of the metal layer 120B and the back metal 122 that form the bump or protrusion structure (ie, the height of the side 121 including the GaN heterostructure). Formed to be less than about 1 〇 micrometer, or more specifically less than about 8 micrometers, or, more specifically, about 2 micrometers to 6 micrometers, or more specifically about 3 micrometers to 5 micrometers, or more specifically about 4.5 micrometers. The metal layer 12b of the bump or protruding structure: the height is generally about 3 microns to 7 microns, or more specifically about 5 to 7 microns, and the total height of the diodes ioo is about less than about 15 = meters ' or especially especially less than about 12 microns, or more especially from about 9 microns to 11: meters' or more especially from about 1 to 10 microns, or more especially about microns. In other exemplary embodiments, the diode (eg, the height of the metal layer 12〇B and the back metal 1 that forms the bump or the protruding structure (ie, includes the side of the GaN heterostructure) It is about less than about 10 microns, or more specifically less than about 8 microns, or: from about 2 microns to 6 microns, "more especially about y: more especially ... meters, forming a bump or protruding structure of gold two": The height of 91 201218416 and back gold 4 122 is generally from about 3 microns to 7 microns, or more particularly about, from about 4 microns to 6 microns or more particularly about 5 microns, ^dipole H)()K The total height is generally less than about 15 microns, or more preferably less than about 14 microns' or more specifically from about 12 microns to 14 microns, or more specifically about 13 microns. In other illustrative embodiments, formation is not included The height of the backside gold 4 122 of the bump or protruding structure but including the height of the metal layer 120B is substantially about 5 micrometers to ι micrometers. The diode ink can also be characterized by its electrical properties, such as implementation. Example 1 :: In this example specific (4) H (1G (M sail) is suspended in at least one substantially non-insulating carrier or solvent, as opposed to, for example, an insulating adhesive. The diode ink can also be characterized by its surface characteristics, as illustrated in Example u, In this illustrative embodiment, the polar ink has a wet turbidity or contact angle greater than 25 degrees ' or greater than 4 G degrees' depending, for example, on the surface energy of the substrate used for measurement (such as 34 dyne to 42 dyne). Dipolar ink Example 12: A composition comprising: a plurality of diodes 100-100L; a first solvent comprising from about 5% to 50% n-propanol, rosin or diethylene glycol, Ethanol 'tetrahydrofurfuryl alcohol and/or cyclohexanol, or a mixture thereof; a viscosity modifier comprising from about 77% to about 5% by weight of methoxymethionyl cellulose wax or superpropyl methylcellulose Resin or other fiber material; methylcellulose resin, or a mixture thereof; 92 201218416. A second solvent (or rewetting agent) comprising from about 0.5% to 10% of a non-polar resin solvent, such as a dibasic ester; And the remainder contains a third solvent, such as water. Diode Ink Example 13: Contains the following composition : a plurality of diodes 100-1 〇〇L; a / mixture comprising about 15% to 40% n-propanol, rosin or monoethyl alcohol, ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol, or a mixture thereof; a viscosity modifier comprising: about 1.25% to 2.5% of a methoxypropylmethylcellulose tree or a propylmethylcellulose resin or other cellulose or methylcellulose resin, or a mixture thereof a second solvent (or rewetting agent) comprising from about 5% to about 1% non-polar resin solvent, such as a dibasic ester; and the remainder comprising a third solvent, such as water. Dipolar ink embodiment 14 : comprising the following composition: a plurality of diodes 100_100L; a first solvent comprising about 17.5% to 22% of n-propanol, rosin or diethylene glycol, ethanol, tetranitroxitol and/or Cyclohexanol, or a mixture thereof; a viscosity modifier comprising from 331 to 5% to 25% methoxypropyl methylcellulose resin or propylmethylcellulose resin or other cellulose or methyl fiber a resin, or a mixture thereof; a second solvent (or a humectant) comprising at least about 5% to 6% by weight A dibasic ester; and 93 201218416 The remainder comprises a third solvent, such as water, wherein the composition has a viscosity at 25 bp of from about 5,000 cps to about 2 Å, 〇〇〇 cps. Diode Ink Example 15: A composition comprising: a plurality of diodes 10〇0_1〇〇L; a first solvent comprising from about 2% to about 4% n-propanol, rosin or diterpenes a diol, ethanol, tetrahydrofurfuryl alcohol and/or cyclohexanol, or a mixture thereof; a viscosity modifier comprising, about 1.25% to 1.75% of a methoxypropyl fluorenyl cellulose resin or a hydroxypropyl fluorenyl fiber Or a resin or other cellulose or decyl cellulose resin, or a mixture thereof; a first/trol (or rewetting agent) comprising at least about 2% to 6% by weight of at least a dibasic ester; and the remainder comprising A trisolvent, such as water, wherein the composition has a viscosity at 25 &lt;&gt;c of about 1, 〇〇〇cpS to about 5, 〇〇〇cps. Diode Ink Example 16: A composition comprising: a plurality of diodes 100-100L having a diameter (width and/or length) of from about 10 to 50 microns and a height of from 5 microns to 25 microns; solvent; Viscosity regulator. Diode Ink Example 17: A composition comprising: a plurality of diodes 100-1 〇〇L; a solvent; 94 201218416. A viscosity modifier; and at least a mechanical stabilizer or spacer. Diode Ink Example 18: A composition comprising: a plurality of diodes 100-100L having a diameter (width and/or length) of from about 10 microns to 50 microns and a height of from 5 microns to 25 microns; solvent; a viscosity modifier; and a plurality of inert particles having a size ranging from about 10 microns to 50 microns. Diode Ink Example 19: A composition comprising: a plurality of diodes 100-100L having a diameter (width and/or length) of from about 20 microns to 30 microns and a height of from about 9 microns to 15 microns; "solvent; a viscosity modifier; and a plurality of substantially optically transparent and chemically inert particles having a size ranging from about 15 microns to about 25 microns. &amp; Diode Ink Example 20: A composition comprising: a plurality of dipoles Body 10 (M00L having a diameter (width and/or length) of from about 10 microns to 50 microns and a height of from 5 microns to 25 microns; further &quot; a first solvent comprising an alcohol; a second solvent comprising a diol; a viscosity modifier comprising from about 1% to about 25% methoxypropyl hydrazine 95 201218416-based cellulose resin or hydroxypropyl methylcellulose resin or other cellulose or methyl cellulose resin, or a mixture; and a plurality of substantially optically transparent and chemically inert particles having a size ranging from about 10 microns to about 50 microns. Diode Ink Example 21: A composition comprising: a plurality of diodes 100-100L, Its diameter (width and / or a degree of from about 10 micrometers to 50 micrometers and a height of from 5 micrometers to 25 micrometers; at least a mixture of at least a first solvent and a second solvent different from the first solvent, comprising at least two of from about 15% to 99.99% The solvent of the following group is selected: n-propanol, isopropanol 'dipropylene glycol, diethylene glycol, propylene glycol, 丨-methoxy-2-propanol, n-octanol, ethanol, tetrahydrofurfuryl alcohol' Alcohols and mixtures thereof; and viscosity modifiers which comprise from about 〇·丨〇% to about 2.5 〇/〇 of methoxypropylmethylcellulose resin or hydroxypropyl fluorenylcellulose resin or other cellulose or Methylcellulose resin' or a mixture thereof. Diode ink Example 2 2: Contains the following composition: a plurality of diodes l〇〇_100L having a diameter (width and/or length) of about 1 μm Up to 50 microns and height 5 microns to 25 microns; at least a mixture of a first solvent and a second solvent different from the first solvent comprising from about 15% to 99.99% of at least two solvents selected from the group consisting of: N-propanol, isopropanol, dipropylene glycol, decylene glycol, propylene glycol, 1-methoxy-2_propyl , n-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol 96 201218416 4 and mixtures thereof; viscosity modifier comprising about 0.10% to 2.5 〇 / 〇 of methoxypropyl methylcellulose resin or hydroxypropyl Methylcellulose resin or other cellulose or sulfhydryl cellulose resin' or mixtures thereof; from about 0.01% to 2.5% of a plurality of substantially optically transparent and chemically inert particles having a size ranging from about 10 microns to about 50 Diode Ink Example 2 3: A composition comprising: a plurality of diodes 100-100L having a diameter (width and/or length) of from about 10 microns to 50 microns and a height of from 5 microns to 25 microns; a mixture of a first solvent and a second solvent different from the first solvent, which comprises from about 15% to 50.0% of at least two solvents selected from the group consisting of n-propanol, isopropanol, dipropylene glycol, Ethylene glycol, propylene glycol, methoxy-2-propanol, n-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; viscosity modifiers, which comprise from about 1.0% to 2.50/. a methoxypropylmethyl cellulose resin or hydroxypropyl methylcellulose resin or other cellulose or methyl cellulose resin, or a mixture thereof; from about 0.01% to 2.5% of a plurality of substantially optically transparent and Chemically inert particles having a size ranging from about 1 micron to about 50 microns; and the remainder comprising a third solvent, such as water. Diode Ink Example 24: Contains the following composition: a plurality of diodes 100-100L, the diameter (width and / or length) of 97 201218416 about 10 microns to 50 micro #曰古总丛仿水 and still a first solvent having a degree of from 5 micrometers to 25 micrometers comprising about 1 Ws heart - such as from about 15/0 to 40% of a solvent selected from the group consisting of n-propanol, iso- hydrazine - propanol, Ethylene glycol, propylene glycol, 1-methoxy-2-propanol, ·ρ立ρ ώ. \ octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol and mixtures thereof; second solvent, which is different from the first solvent And contains about 2% to choose one of the solvents from the underarm, 'and the group: n-propanol, isopropanol, dipropylene glycol, diethylene glycol 'propylene glycol, 】 methoxy 2-propanol And n-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and a mixture thereof; the third solvent 'which is different from the first solvent and the second solvent and contains 0:01% to 2.5% of a solvent selected from the group consisting of : n-propanol, iso-alcohol, mono-alcohol, diethylene glycol, propylene glycol, diterpeneoxy-2·propanol, octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol and mixtures thereof a viscosity modifier comprising from about 1% to about 25% methoxypropylmethylcellulose tree 1 propyl decyl cellulose m other fiber or methylcellulose resin' or mixtures thereof; and the remainder A third solvent, such as water, is included. Diode Ink Example 25: A composition comprising: a plurality of diodes 1〇〇_1〇〇L having a diameter (width and/or length) of from about 10 microns to 50 microns and a height of 5 microns to 25 micrometers; the first solvent 'comprising about 15% to 30% of a solvent selected from the group consisting of n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol 1 -decyloxy-2- Propanol, n-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol 98 201218416, and mixtures thereof; the second solvent 'which is different from the first solvent and contains from about 3% to 8% of a solvent selected from the group consisting of: N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 丨_methoxy-2-propanol, n-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; third solvent' It is different from the first solvent and the second solvent and comprises about 0.01% to 2.5% of the solvent of the group consisting of: n-propanol, isopropanol, dipropylene glycol, _ 7 #, ^ ^ —B. scorpion, propylene dihydrogen, methoxy-2-propanol, n-octanol, ethanol, tetrahydrofurfuryl alcohol, hexanol and mixtures thereof a viscosity modifier comprising from about 125% to 25% methoxypropyl methane fibroin W or a 26 propyl methylcellulose resin or other cellulosic methylcellulose resin, or a mixture thereof; The plurality of substantially optically transparent and chemically inert particles having a force ranging from about 0.01% to about 2.5% range in size from about 10 microns to about 50 microns; and the remainder comprising a third solvent, such as water. Diode Ink Example 26: A composition comprising: a plurality of diodes having a diameter (width and/or length) of from 10 micrometers to 5 micrometers and a height of 5 micrometers. To the micron; the first solvent 'which contains 40% to 6% of the solvent selected from the group consisting of: n-propanol, isopropanol, dipropylene glycol...diol = alcohol 1 methoxy-2-propanol, positive Octanol, ethanol, tetranitroxitol, cyclohexane and mixtures thereof; second solvent, which is different from the first solvent and contains from about 4% to about 6% of 99 201218416. The solvent of the following group is selected: n-propyl Alcohol, isopropanol, dipropane diethylene glycol, propylene glycol, methoxy-2-propanol, n-octanol, ethanol 'hydrohydrofurfuryl alcohol, cyclohexanol and mixtures thereof; and four viscosity modifiers' It comprises from about 0.10% to 125% of a methoxy cellulose resin or a propylmethylcellulose resin or other cellulose-based cellulose resin, or a mixture thereof. , Diode Ink Example 2 7 : Contains the following composition: a plurality of diodes 100_1〇〇L, the diameter (width and / or length of about 10 microns to 50 microns and height of 5 microns to 25 microns 丨 &quot a solvent-containing solvent comprising from about 4% to about 6% by weight of a solvent selected from the group consisting of n-propanol, isopropanol, __ _ 丨 丨 - 内 内 S, diethylene glycol, propylene glycol, A a mixture of oxy-2-propanol, 1_single, 7 oxime, alcohol, tetrahydrofurfuryl alcohol, cyclohexanol; a second solvent, which is different from the first solvent and contains about 40% to 60% The solvent selected from the group consisting of: n-propanol, isopropanol, dipropylene glycol, monopropanol, κ methoxy-2-propanol, octyl alcohol, ethanol, tetrahydrofurfuryl alcohol, Cyclohexanol and mixtures thereof; Viscosity granules, which are 〇1 /, 匕a about 0.10 / 〇 to 125% of methoxypropyl fluorenyl cellulose resin or propyl methyl cellulose resin or Other cellulose or methylcellulose resins, or mixtures thereof; and from about 0. 01% to 2.5% of a plurality of substantially optically transparent and chemically inert particles having a size in the range of about 10 Meter to 5 μm. Referring to the diode ink embodiment 12-27, in an exemplary embodiment 100 201218416, another alcohol as the first solvent, n-propanol ("NPA") (and/or n-octane) Shame (eg 1-octyl alcohol (or any of the various secondary or tertiary octanol isomers), 1-decyloxy-2-propanol, rosinol, diethylene glycol, dipropylene glycol, four Hydrogen sterol or cyclohexanol) replaces substantially all or most of the IpA. In the case where the diode 100-100L is generally or mostly precipitated at the bottom of the vessel, the IPA is removed, NPA is added, and the IPA is stirred or mixed at room temperature. , a mixture of NpA and a diode 100-100L, and then again precipitate the diode 1〇〇1〇〇L to the bottom of the container, and remove a part of the mixture of IPA and NPA, and then add NpA (about 120 ml to 140 ml) The process of adding NpA and removing the mixture of IpA and NPA is generally repeated twice, resulting in a wafer containing mainly nPA, a diode 100-100L, a trace or a small amount of IPA, and possibly a trace or a small amount of residual wafer. Mixture of solvent and wafer adhesive solvent 17 。. In one example, residue The residual or trace amount of IPA is less than about 1%, and more typically about 0.4%. Also in an exemplary embodiment, the final percentage of NPA that may be present in the exemplary diode ink is about 0.5% to 5 〇%, or more particularly from about 1% to 10%, or more particularly about 3% to, or in other embodiments, more particularly from about 15% to about 4%, or more particularly about 17%. 5% to 22.5%, or more especially from about 25% to about 35%, depending on the type of printing to be used. When using rosin and/or diethylene glycol in conjunction with or in place of NPA, 'rosinol Typical concentrations are from about 5% to about 2%, and typical concentrations of diethylene Sf. are from about 15% to about 25 %. It is also possible to transfer IPA, NPA, rewetting agent, deionized water (and other compounds and mixtures used to form the exemplary diode ink) to about 25 microns or less than 25 meters to remove the specific diode 100. -100L large or in the same size class as the diode 1〇〇_1〇〇L 101 201218416 particle contaminants. a mixture of a solvent and a diode 1 () {M〇〇l is added to a viscosity modifier and mixed therewith or briefly stirred off. The viscosity modifier such as a methoxy group A propyl methylcellulose resin, a hydroxypropyl fluorenyl cellulose resin or other cellulose or methyl cellulose resin. In an illustrative embodiment, 'E.ME_1G methylcellulose resin is used' (available from The Dow Chemical Company (www.dow.com) and Hercules

ChemiCal C〇mPany Corporation (www.herchem, cnm, available) such that the final percentage in the exemplary diode ink is from about 〇1〇% to 5.0%' or more particularly from about 〇.2% to 1.25. %, or more particularly from about 〇3% to 7%·7%' or especially especially from about 〇.4% to 〇6%, or more especially from about 丄(10) to .5 or especially from 1.5% to 2. 〇 %, or. More especially less than or equal to 2.〇%. In an exemplary embodiment, the use of about 3. 〇〇 / 〇 Ε 〇 〇 〇 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 , , , , , , , , , , , , , , These include the viscosity modifiers discussed above and the viscosity modifiers discussed below with reference to dielectric inks. The viscosity modifier is a diode 1G (M sail is provided with sufficient reduction to disperse it especially in refrigeration and maintain suspension without sinking from the liquid or colloidal suspension. As mentioned above, a second solvent can then be added (Or adding the granules to Examples 3 and 4), which are typically non-polar resin solvents, such as one or more teeth. In an exemplary embodiment, a mixture of two vinegars is used. To achieve from about _ to about 10%, or more especially from about 5% to about 6%, more specifically from about 0% to about 5.0%' or more especially from about 2% to about 4%, g 102 201218416 In particular, a final percentage of from about 2.5% to about 3 to 5%, such as dimethyl glutaric acid or such as about two-thirds (2/3) of dinonyl glutarate and about one-third (1/3) of diced a mixture of dinonyl esters having a final percentage of about 337%, such as DBE-5 or DBE-9 (available from Invista USA, Wilmington, Delaware, USA), which also has traces or minor amounts of impurities, Such as about 2% dinonyl adipate and 0.04% water. It may be necessary or necessary to add a second solvent (such as deionized water) Adjusting the relative percentage and decreasing the viscosity. Other than the dibasic ester, other second solvents that can be used equivalently include, for example, but not limited to, water; alcohols such as decyl alcohol, ethanol, n-propanol (including propanol, 2-propanol (isopropanol), 丨_曱oxy-2-propanol), isobutanol, butanol (including 1-butanol, 2-butanol), pentanol (including pentanol, 2_) Pentanol, ^pentanol), n-octanol (including hydrazine-octanol, 2-octanol, 3-octanol), tetrahydrofurfuryl, % hexanol; ethers, such as methyl ethyl ether, diethyl ether, Ethyl propyl ether and polyether, esters such as ethyl acetate, dinonyl adipate, propylene glycol monoterpene ether acetate (and dinonyl glutarate and dimethyl succinate as described above) ; two: such as ethyl alcohol, diethylene glycol, I ethylene glycol, propylene glycol, dipropylene, alcohol ether, alcohol ether acetate; carbonate, such as propyl carbonate; Gan 'class' Such as glycerin; acetonitrile, tetrahydrofuran (THF), dimethylformamidine (DMF), N-methylguanamine (Qing), Dimethylguanidene (DMS); and a mixture. In an exemplary embodiment, the amount of the first solvent and the molar ratio of the first agent are in a range of at least about 2:1, and more particularly in a range of at least about 5:1' and more particularly at least In the range of about 12:1 or more than 12:1 * y*廿^ v, in which case the function of the two solvents can be combined in a single-type agent, and in one exemplary embodiment, a polarity or non-use is used. Extreme 103 201218416 Sex; gluten. Also in addition to the dibasic vinegars discussed above, such as, but not limited to, exemplary solubilizing, wetting or solvating agents, as mentioned below, include propanol monoacetate (C6H|2) 〇3) (sold by Eastman under the name "PM Acetate") - it is used with 丨-propanol (or isopropanol) at a molar ratio of about 1:8 (or 22:78) To form a suspension medium; and a plurality of dibasic esters, and mixtures thereof, such as dinonyl succinate, dimethyl oxalate and dimethyl pentanoate (different mixtures thereof available from Invista under the product name DBE, DBE -2, DBE-3, DBE-4, DBE-5, DBE-6, DBE-9, and DBE-IB are obtained). In an illustrative embodiment, DBE_9 is used. The molar ratio of solvent will vary based on the solvent chosen, with 1:8 and 1:12 being typical ratios. Reference Diode Inks Examples 17_2〇, 22' 25 and 27 include one or more mechanical stabilizers or spacers, such as chemically inert particles and/or optically clear particles, such as typically comprising, but not limited to, tannin Salt or glass beads of boron borax salt glass. In each of the illustrative embodiments, from about 0. 01% by weight to 2.5% by weight, or more particularly about 〇5 by weight, is used. To a working weight, or more particularly from about 0.1% to about 3% by weight, of glass spheres having an average size or size ranging from about 10 microns to 3 microns, or more particularly from about 12 microns to 28 microns. Or more particularly, from about 15 microns to 25 microns. These particles provide mechanical stability and/or spacing during the printing process, such as acting as a thin plate spacer when feeding the printed sheet into the printing press, since the diodes are initially only dried or cured. The relatively thin film formed by the diode ink is held in place (as illustrated in Figures 89 and 9). In general, the concentration of the inert particles is sufficiently low that the number of inert particles per unit area (device 104 201218416 area after deposition) is less than 100-100 L per unit area of the diode. Lazy Ke private J3L la tt± provides mechanical stability and spacing in the degree of tension, tending to prevent the diode (10)-mouse from printing when depositing conductive layer (31〇) and/or dielectric layer Ο i 5 ) When the sheets are fed into the press, the printed sheets are displaced and lost as they slide over each other' similar to ball bearings providing stability. After depositing the conductive layer (31 Å) and/or the dielectric layer (315), the diode is effectively held or (4) in place, and the probability of displacement is significantly reduced. The erotic particles are also held or held in place, but do not perform other functions in the completed device 30^7=72G, 73G, 740, 75G, 76G, 77G and are actually electrically and chemically inert, in Figure 94. A plurality of inert particles 292 are illustrated in cross section and, although not separately illustrated in other figures, may be included in any other illustrated device. Diode Ink Example 2G_27 is illustrated to provide other and more efficient diode compositions for the fabrication of various devices 300, 700, 72, 73, 74, 75, 76, 77. Particular embodiments. Diode inks having cellulose or methylcellulose resins (such as propylmethylcellulose resins) Example 20 and other examples may also include other solvents not specifically mentioned, such as, but not limited to, water Or 丨_methoxy-2-propanol. Although various diode inks are generally mixed in the order described above, it should also be noted that various first solvents, viscosity modifiers, second solvents, and third solvents (such as water) may be added or mixed in other orders. Any and all orders are within the scope of the invention. For example, deionized water (as a third solvent) can be added first, followed by the addition of 丨-propanol and DBE_9, followed by the addition of viscosity modulating. Then it may be necessary to add water to adjust the case 105 201218416 such as relative percentage and Viscosity. Subsequent to the first solvent (such as NPA), diode 1 at room temperature in an air atmosphere, such as by using an impeller mixer at a relatively low speed (to avoid incorporation of air into the mixture). a mixture of 〇 (M〇〇L, a viscosity modifier, a second solvent, and a third solvent (if present) (such as water) for about 25 minutes to 30 minutes / in an exemplary embodiment, the resulting volume of the diode ink Usually about one-half liter to one liter (per wafer) contains 9 million to 10 million diodes 1〇〇1〇〇L, and the diodes can be adjusted up or down as needed. The concentration of 1 〇〇L, such as the concentration required for the selected printed LED or optoelectronic device described below, with exemplary viscosities ranging from the above for different types of printing and different types of diodes i〇〇 -io〇L. The first solvent (such as NPA) also tends to act as a preservative and inhibit the growth of bacteria and fungi for storing the resulting diode ink. When using other first solvent, 'may also add each Preservative, inhibitor or fungicide. For an exemplary For example, other surfactants or defoamers for printing may be used as an alternative, but not for proper functioning and exemplary printing. The diodes may be adjusted according to the needs of the device. The concentration of L. For example, for lighting applications, a lower surface brightness lamp can use about 25 diodes per square centimeter 100_100L' using a diode of 1〇〇-1〇〇l concentration per milliliter (cm3) About 2,500 diodes of diode ink. For another exemplary embodiment, a wafer 150 may contain about 72 million diodes 100-100L to obtain about 570 ml of diode ink. Each milliliter of the diode ink can be used to cover about 500 square centimeters at the time of printing, 57 〇 ml of the diode ^ 106 201218416 water coverage of about 28.8 square meters. Also for example, about 100 diodes per square centimeter An extremely high surface brightness lamp of 100-100 L, which requires a concentration of about 50,000 diodes per milliliter (cm3). Figure 75 is a diagram illustrating an exemplary method of fabricating a diode ink. Flowchart and provide an applicable overview "The method begins (starting step 2)), releasing the diode i〇〇-i〇〇L from the wafer 150, 150A (step 2〇5). As discussed above, this step involves first bonding the wafer with the wafer bonding adhesive. The side (diode side) is adhered to the wafer holder, and the second side (back side) of the wafer is stripped, ground and/or polished using a laser to expose the singulated trench and as needed or viewed It is specified to remove any other substrate or GaN and dissolve the wafer to bond, the adhesive to release the diode 100_100L to a solvent (such as IpA) or another solvent (such as NPA) or any other solvent described herein. When using IPA The method comprises the step of transferring the diode 100-100L to a (first) solvent (such as npa), optionally using step 21A. The method then adds the diode 100-100L in the talc to a viscosity modifier (such as thioglycol) (step 215) and adds one or more second dissolves 1 or two binary An ester such as dinonyl glutarate and/or monomethyl succinate (step 220). A third solvent, such as deionized water, can be used to adjust the reset percentage (step 225). In step 230, the method picks up a plurality of diodes 1 〇 (M0 0L, a solvent, a viscosity modifier, a second solvent (and a plurality of) at room temperature (about 25 〇c) in an air atmosphere. The viscosity of the chemically inert particles (such as glass beads) and any other deionized water '0 minutes' is about 1,000 cps to about 25, 〇〇〇cps. #方去可完' Back to step 2 3 5. It should also be noted that, as mentioned above, 107 201218416, steps 215, 22 and 225 can be carried out according to their immortality and can also be used in other-human order, and can be repeated if necessary, and also Figure 2 is a perspective view showing an exemplary embodiment of an exemplary device. Figure 77 is a schematic diagram showing an exemplary embodiment of an exemplary device from a positive electrode (second). (Or, as seen above, Figure 78 is an exemplary device 3. Specific examples (through the plane of Figure 76). Figure 79 is a second cross-sectional view illustrating a specific example (through the figure 3i_3i. plane). Figure 80 is a perspective view of an exemplary second device - a specific example. A first cross-sectional view of the device 7 (transparent, FIG. 8A, 88_88, plane). FIG. 82 is a second cross-sectional view of an exemplary second device 700 in particular (through the 87 of FIG. 80- 87, the floor plan 83 is -

A cross-sectional view of the exemplary diodes 100J, 100K, 100D, and 100E of the first conductors 310A' is lightly connected to the first conductors 310A'. Figure 87 is a cross-sectional view showing an exemplary second embodiment of the apparatus 3, C, which emits light from both sides. Fig. 88 is a cross-sectional view showing a specific example of the fourth device 3 〇〇 D which is illuminating from both sides. Figure 89 is a cross-sectional view showing a more detailed portion of a specific example of the apparatus of the first embodiment. Figure 90 is a cross-sectional view showing a more detailed portion of a specific example of the first device of the azole. Figure 9 is a perspective view illustrating a specific example of the fifth device 720. Figure 92 is a cross-sectional view of an exemplary fifth device 720 embodiment (through the 57_57' plane of Figure 91). Figure 93 is a perspective view of an example of an exemplary sixth device 730. Figure 94 is a cross-sectional view showing a specific example of the eighth device 730 of the first embodiment (through the plane 58-58 of Fig. 93). Fig. 95 is a perspective view of an exemplary seventh device 74. Figure 96 is a cross section ffl of an exemplary seventh device 740 embodiment (through the 5 9-59' plane of Figure 95).圊97 is a perspective view of an exemplary eighth device 750 embodiment 108 201218416. Figure 9 is a cross-sectional view of an exemplary embodiment of the eighth device 750 (through the 61-61' half-length, dry surface of Figure 97). Figure 99 is a plan view (herely top view) illustrating an exemplary second electrode structure of a first conductive layer of an exemplary device body example. Figure 101 is a plan view (or #view) of an exemplary ninth and tenth device 76G, 77G of a typical embodiment of the system _, 81 说明 illustrated in Figure 100. Head 1 () 2 is a cross-sectional view of a specific example of an exemplary ninth device 760 (through the 63_63, plane of Figure 1-1). Figure 1-3 is a cross-sectional view of an exemplary tenth device 770 embodiment (through the 63-63' plane of Figure ι). Fig. 109 is a photograph of a specific example of the energization-exemplifying device 3A. Referring to Figures 76-79, in device 3A, one or more first conductors 310 are deposited on a first side of substrate 3〇5, followed by deposition of a plurality of diodes 100-100K (coupling second terminal 127 Connected to the conductor 310), the dielectric layer 315, the first conductor 320 (generally a transparent conductor connected to the first terminal), and then deposit a stabilizing layer 3 3 5, a light emitting (or emitting) layer 3 2 5 and a protective layer or coating 330. In the embodiment of device 300, if optically opaque substrate 305 and first conductor 310' are used, light is primarily transmitted or absorbed through the top first side of device 300, and if optically transmissive substrate 305 and first conductor 3 are used. 10, light is emitted or absorbed or absorbed from both sides of the device 300 to either side of the device 300 (especially if energized with an AC voltage to energize the diodes 100-100K having the first or second orientation). Referring to Figures 80-83, in device 700, a plurality of diodes 10L are deposited on a first side of substrate 305 having optical transparency and thus referred to herein as substrate 305A, followed by deposition of one or more first Conductor 310 (coupled conductor 310 109 201218416 to second terminal 127), dielectric layer 315, second conductor 320 (coupled to the first terminal) (which may or may not be optically transmissive), and optionally deposited Stabilizing layer 335 and protective layer or coating 330. The luminescent (or emissive) layer 325, as appropriate, may be applied to the second side of the substrate 305 along with any other protective layer or coating 330 before or after any deposition step on the first side of the substrate 305. In this device 700 embodiment, if one or more optically opaque second conductors 320 are used, light is primarily emitted or absorbed through the substrate 305A of the device 700 on the second side, and if one or more optical transmissions are used The second conductor 320 then emits or absorbs light on either side of the device 700. / / Various devices 300, 700, 720, 730, 740, 750, 760 specific examples can be printed as LED-based lighting flexible sheets or other household appliances: for example, they can be crimped, folded, twisted, hovered , tangling, wrinkling, and otherwise forming into any of a variety of forms and designs, including, for example, but not limited to, architectural shapes, other designs or imaginative designs of folding and crease origami Shape, Edison (Ediwr bulb shape, fluorescent bulb shape, chandelier shape, one of the fold-and-finger Edison bulb shapes is illustrated in Figure 1A as System 2 810. Various devices 300, 700 specific examples It is also possible to combine, for example, back-to-back in various ways to cause light to be emitted or absorbed from both sides of the resulting device. (d) &quot; (but not limited), two splits 3 can be on the respective substrate 3〇5; the back side is combined on the two sides to form a device 3〇〇c specific example, or the device % can be printed on the substrate 305 The two sides are formed on the two sides to form a device 3, and the concrete examples and the specific examples of the device are shown in FIG. 87 and 110 201218416. Also by way of example and not limitation, the two devices 700 may be combined back-to-back on the non-substrate 305 (the first side) and also from both sides of the resulting device. Referring to Figures 91-92, In device 720, one or more first conductors 310 are deposited on a first side of substrate 305, followed by deposition of carbon contacts 322A to couple to conductors 310, followed by deposition of a plurality of diodes 1 〇〇 1 1 〇 〇κ (couples the second terminal 127 to the conductor 31〇), the dielectric layer 315, and one or more layers of the second conductor 320 (generally a transparent conductor coupled to the first terminal), and then deposits carbon contacts 322B is coupled to conductor 32, optionally depositing a stabilizing layer 335, a light emitting (or emitting) layer 325, and a protective layer or coating. In this embodiment of device 300, light passes primarily through the top of device 72. One side emits or absorbs, and if optically transmissive substrate 3〇5 and first conductor 31〇 are used, light is emitted or absorbed or emitted from both sides of device 720 to both sides of device 720 (especially if ac voltage is used) Power on). Referring to Figures 93-94' in device 730, in optical transmission base Depositing one or more layers of substantially optically transmissive first conductor 3 1 0 ' on the first side of the bottom 3〇5a, followed by depositing a carbon junction 322A to couple to the conductor 3丨〇, and then depositing a plurality of diodes ιοο-ι 〇〇κ (couples the second terminal 127 to the conductor 31〇) together with a plurality of inert particles 292, a dielectric layer 3丨5, and one or more layers of a second conductor 320 (also generally coupled to the first terminal) a transparent conductor), followed by deposition of a carbon junction 322B to couple to the conductor 32, optionally depositing a stabilizing layer 33 5, a first luminescent (or emitting) layer 325, and a protective layer or coating 33, followed by a substrate 305A A second illuminating (or emitting) layer 325 and a protective layer or coating 330 are deposited on the second side. In this embodiment 73, the light is transmitted or absorbed through both the second side of the package 2012 201218416. 2.5 also shifts the wavelength of the second illuminating (or emitting) layer of light using the second illuminating (or emitting) layer light through the top first side and the bottom of the first side emitting light 73 (in addition to shifting the spectrum of light emitted through the first side) Position of the first illuminating (or emitting) layer 325.) Referring to Figures 95-96 'on device 740 Depositing a plurality of diodes 100L on the first side of the substrate 3G5, which is optically transmissive and also referred to herein as the substrate 3G5A, and then depositing one or more layers, the conductor 31〇 (couples the conductor 3 〇 to The second terminal 127), which in turn deposits the carbon contact 322α to be coupled to the conductor 31, deposits the dielectric layer 315, and also deposits one or more layers of the second conductor 32 (coupled to the &amp; sub-) and then deposits carbon Point 3 2 2 Β to bond to the conductor 3 2 0 , and optionally a stabilizing layer 335 and a protective layer or coating 33 沉积 are deposited. The illuminating (or emitting) layer 325, as appropriate, may be applied to the second side of the substrate 305 along with any other protective or coating layer 330 before or after any deposition step on the first side of the substrate 305. In this embodiment 74, light is primarily emitted or absorbed through the substrate 3〇5Α of the device 74 on the second side (and also undergoes any wavelength shift through the first illumination (or emission) layer 3 2 5), And if one or more optically migrating second conductors 3 2 使用 are used, the light is emitted or absorbed on both sides of the device 74. Referring to FIGS. 97-98, in device 750, a plurality of diodes 100L are deposited on a first side of substrate 305 that is optically transmissive and also referred to herein as substrate 305, followed by deposition of one or more layers of first conductor 310. (conducting the conductor 310 to the second terminal 127), then depositing the carbon contact 3UA to couple to the conductor 3 1 , depositing the dielectric layer 3 15 , and depositing one or more layers of the substantially optically transmissive second conductor 320 (coupling to the first terminal), and then depositing the carbon contact 322 搞 to 112 201218416 to the conductor 32 〇 ' and then depositing a stabilizing layer 335, optionally a first illuminating (or emitting) layer 325 and protecting Layer or coating 33〇. Before or after any deposition step on the first side of the substrate 305, a second luminescent (or emissive) layer 325, as appropriate, may be applied to the substrate 3 〇 5A along with any other protective layer or coating 330 Two sides. In the particular embodiment of device 750, light passes through either of the top first side and the bottom second side of device 75, and any wavelength shift occurs through first and second light emitting (or emitting) layers 325. The devices 76A and 77A will be described in more detail below with reference to Figures 100-103, and eight other devices are distinguished by the use of a second conductor 312 that is also typically deposited as or in multiple layers. In addition, it is also illustrated that the device 77 uses the barrier layer 3 1 8 discussed in more detail below. 'Devices 300, 7〇〇, 72〇, 73〇, 74〇, 75〇, 76〇, as described above, are formed by the following steps on the substrate 3〇5 (ie for the device, 720 H 750) (for example, printing) a plurality of layers, on the substrate 305, a plurality of first conductors 31 〇, a inner conductor (10) layer or a complex

A number of conductors 3 10 form, 纟||| and -, A ^ M and a dipole of 1 〇Λ when the diode 100-100L is in a liquid or colloidal suspension; Λ Λ τ , Tudu 100 -100L (up to about 18 microns to 20 microns or more), crystal ray, η, , &gt;, 臈 thickness) (ie, diode ink), and evaporate or otherwise disperse the county, , empty, point 々 _ 'knife l L + liquid liquid / colloid part, and for the device 7 〇 0 ' 74G ' 75G 'on the first side of the optically transmissive substrate 305A in a polar body 10 0 -1 〇〇L in a liquid or colloidal suspension 100-100L (up to about 18 氺 s ^ 〇 8 嘁 not 20 microns or more than 20 microns wet film thickness) (ie diode ink) eight '') U, or otherwise dispersing the suspension 113 201218416 Liquid/colloidal part' followed by deposition of one or more first conductors as the diode 100-100L liquid or colloidal suspension is dried or solidified, the components of the diode ink (especially the viscosity modifier or adhesion viscosity modifier as described above) forms a relatively thin film, flooded layer, grid or around the diode 100-100L The hole 'which helps hold the diode 100_1〇〇L in place on the substrate 3〇5 or the first conductor 310, which is illustrated as a film 295 in FIGS. 89 and %, typically having a thickness of approximately 50 nm. Up to about 3 〇〇 nm (when fully cured or dried), depending on the concentration of the viscosity modifier used, such as a thickness of about 5 〇 to 1 〇〇 (1) for a lower viscosity modifier concentration, For a more viscous viscosity modifier concentration, the thickness is about 2 Å to nm. The deposited film 295 may continuously surround the diode 10〇_1〇〇L, as illustrated in FIG. 89 or may be intermittent, leaving a gap and only partially surrounding the diode 100-100L, as shown in FIG. Explained in the middle. Although the terminals 125, 127 are typically coated with a diode ink film 295, the terminals 125, 127 generally have sufficient surface roughness such that the film 29S does not interfere with the electrical connection with the first and second conductors 31, 32. Film 295 typically comprises a viscosity modifier in a cured or dried form, and may also contain minor or trace amounts of various solvents, such as a first or second solvent, as mentioned below with reference to a cured or dried diode ink embodiment. As also discussed in more detail below, the viscosity modifier can also be used to form the barrier layer 318 discussed below with reference to FIG. For the device 300, the diode 100_100κ is physically and electrically coupled to one or the first conductor 310A, and for the device 7〇〇, the diode 1〇〇κ is physically coupled to the substrate 305, and then coupled to the The plurality of first conductors 31〇, and in the specific examples of the apparatus 300, 700, 'due to the diodes i〇〇_1〇〇L when suspended in a liquid or colloid at any time 114 201218416. Therefore, the diodes 100-100L can be in a certain direction (the first total 3 &amp; the Angstrom 125 is in the upward direction), the second orientation (the first embodiment 125 is in the downward direction) or can be To the second orientation (the first terminal 125 is lateral). In addition, since the diodes 1 〇〇υ0_1001^ are deposited when suspended in a liquid or a colloid, the diodes 10 (the M00L are generally irregularly spaced within the farm 300. Further, as described above, in the exemplification In a specific embodiment: the diode ink can comprise a plurality of chemically inert, generally optically transmissive particles, such as glass beads, having a size ranging from about 10 microns to 30 microns, or more specifically from about 12 microns to 28 microns. Or, more particularly, from about 15 microns to 25 microns. In a first upward orientation or direction, as illustrated in Figure 83, the first terminal 125 (the diode 1 丽• 丽 形成 forming a bump or protruding structure of the metal The layer 120B or the diode 1 〇〇 metal layer 122) is oriented upward, and the diode 100 100 Κ is via the second end + 127 (which may be the metal layer 120 二 of the diode ι κ or as for the diode The back metal layer η 广 广 广 . 所 所 所 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心 中心22 specificized), or via peripheral guide holes 134 (not separately stated), or The substrate 105, as for the diode ιοοΕ, is connected to the one or more first conductors 310A. In the second downward orientation or direction, as illustrated in Figures 78 and 79, the first terminal 125 is downward. Oriented, and the diode 1〇〇_10〇Κ via or may be formed via the first terminal 125 [eg, the diode 1〇〇_1〇〇J is formed into a bump or protruding structure of the metal layer 120B or the diode 1 The metal layer 122 of the 〇〇κ is coupled to the one or more first conductors 310. 115 201218416 For the diode 〇OL, the diode 100L can be oriented in the first upward direction or direction as illustrated in FIGS. 81 and 82. Orientation, wherein the first and second terminals 125, 127 are oriented upwards, and are not separately illustrated, the diodes may be oriented in a second downward orientation or direction, wherein the first and second terminals 125, 127 are oriented downwardly. Hai is directed downward, it should be noted that although the first terminal 125 can be in electrical contact with one or more first conductors 3 10 , the second terminal 127 is likely to be within the dielectric layer 135 and will not be in contact with the second conductor 32 . So that the diode 1〇〇 [electrically isolated and non-functional when having a second orientation, this is in many specific examples It may be desirable. As far as the diode 100_100L is suspended in a liquid or colloid, the spacing between them is uncertain and deposited at any 36 degrees, it is not known in advance with any certainty (for example, the highest quality manufacturing). Where the specific diodes 1〇〇_1〇〇L will fall on the substrate 305A or the one or more first conductors 31〇 and in what direction In fact, there is a statistical distribution of the spacing between the diodes 1 〇〇_丨00L and the orientation of the diodes 100-100L (first upward or second downward). It can be quite certain that at least one of the diodes 100〇_1〇〇L, which may be deposited on the substrate 3〇5, 3〇5A thin plate or a series of thin plates, at least one of the diodes 100- 100L will be erected in a second orientation as it deposits when dispersed and suspended in a liquid or gelatinous order.

Thus, the distribution and orientation of the diodes 100-100L in devices 300, 7A, 72A, 73A, 740, 75 0, 760, 770 can be statistically described. For example, although it may not be accurately known or uncertain before deposition any of the particular diodes 100-1 00L will fall on and properly hold on the substrate 3 05A 116 201218416 or - or multiple first guides 310 At what position, the average number of diodes 100_100L will be 100-100L concentration per diode per unit area, such as (but not limited to) 25 diodes per 々 a knife l〇〇 l〇〇L is in a specific orientation. w Thus, the diode 100-ancestor can be considered to have or have been deposited in a virtually random or pseudo-random orientation and at irregular intervals, and can be oriented first (or one end + 125 up), which is usually The forward (four) voltage and diode of the diode HHM00J! The direction of the reverse bias of the can (depending on the polarity of the applied voltage), or may be second downward (first terminal US down), which is usually a diode 丨〇〇 丨〇〇 The reverse bias voltage of J and the direction of the forward bias of the diode 1G0K (depending on the polarity of the applied voltage). Also for the diode 100L, it may be oriented first upward (the first and second terminals 125, 127 are upward), and the first orientation is usually the forward bias voltage of the diode l〇〇L Oriented, or may be oriented downward (first and first 125, 127 down), the second orientation is usually the reverse bias of the diode i〇〇L (also Depending on the polarity of the applied voltage, $), despite the above and as described in more detail below, the second oriented diode 100L is uncoupled; it is not fully electrically coupled and does not function. It is also possible for the diode to be laterally deposited or erected in a third orientation (the diode side 121 is downward and the other diode side 121 is upward). One-electrode ink, fluid dynamics, viscosity or rheology, mesh count, mesh opening, mesh material (surface energy of mesh material), #brush speed, phase 3 of the first conductor Orientation of the tines of the miscellaneous or comb structure (the tines are perpendicular to the direction in which the substrate 305 is moved by the printer), the surface of the substrate 305 or the first conductor 31 on which the diode 117 201218416 100-100L is deposited, The shape and size of the polar body 100-100L, the density of the printed or deposited diode i〇〇i〇〇l, the shape, size and/or thickness of the side 121 of the diode, and the curing or drying of the diode ink The sonication or other mechanical vibration of the previous diode 1〇〇_1〇〇L liquid or colloidal suspension seems to affect a first, third, third orientation compared to another first, second or third The advantage of orientation. For example, the height of the diode (four) m (or _ straight thickness, the vertical system with respect to the first or second orientation) is less than about 10 microns, and the height is more particularly less than about 8 microns, so that the 二dipole 100_100L has a relatively thin The side or side edges significantly reduce the percentage of the diodes 10〇_1〇〇L having the third orientation. Similarly, fluid dynamics, higher viscosity, and lower mesh counts, as well as other factors described above, provide for the control of the orientation of the smear, thereby tuning or adjusting the first or second orientation of the pole for a given application. The percentage of body weight Wei. For example, the factors listed above can be adjusted to increase the incidence of the first orientation such that as much as 80% to 90% or more of the diode 100_100L is in the first orientation. Also for example, the factors listed above may be adjusted to balance the occurrence of the first orientation and the second orientation such that the first orientation and the second orientation of the polar bodies 100-100L are substantially or substantially evenly distributed, For example, 4% to 6G% of the diodes (10) are in a first orientation and 6% to 40% of the diodes 100-100L are in a second orientation.

. It should be thought that even if a significantly higher percentage of the diodes (10) coupled to the first conductor 3 1 0 A or the substrate 305 are in the first direction or the direction, it is still statistically possible to at least One or more of the diodes i〇〇_i〇〇l will have a downward direction or direction, and statistically, the diodes 1〇〇1〇〇L 118 201218416 will also exhibit an irregular spacing ' Some diodes have a relatively close spacing of 1 00-1 〇〇J, while at least some of the diodes have a much wider pitch of 100-100J. In other words, 'depending on the polarity of the applied voltage, although a significantly higher percentage of diodes 1 〇〇-100L will or will be coupled with a first forward bias or direction, statistically, at least one or The plurality of diodes i 〇〇 _ i 〇〇 L will have a second reverse bias orientation or direction. If the illuminating or light absorbing region 14 〇 different orientations, it is understood by those skilled in the art that depending on the polarity of the applied voltage, the first orientation should be reverse biased and the second orientation should be forward biased. Orientation. For example, unlike conventional electronic electronics that use a pick and place machine to position electricity, U1, D, and the body to adhere to a predetermined position on the board within a selected tolerance and in a predetermined orientation, at any given In this case, the diodes 100-100L do not have such predetermined or determined positions (in the X_y plane) and orientation (z-axis) in the devices 300, 700 (ie, at least one diode 100-100L is in the device) 30〇, 7〇〇 will be the second orientation). This is significantly different from the existing device structure. In the existing device structure, all the ones such as the LEDs have a single-orientation with respect to the voltage, that is, the corresponding anodes of all the ones are coupled to a higher voltage and Its cathode is coupled to: low voltage. Since the statistical definition 'depends on the percentage of the second or second orientation of the two poles 00L, depending on various diode characteristics (such as the capacity of the reverse bias), AC or DC can be used. The voltage or current energizes the two jade 100-1 00L without separately converting the voltage or current.丨, &gt; Test Figures 77 and 99' can use a plurality of first conductors 31〇 to form two separate electrode junctions, which are described as the first (--) conductor electrode or 119 201218416 contact 31〇 Eight and second (first) conductor electrodes or junctions 31 〇 B phase-to-phase miscellaneous or comb-like electrode structures. As illustrated in Figure 77, conductors 〇8 and 3i〇B have the same width, and are illustrated in Figures 76 &amp;7&gt;, having different widths, all of which are within the scope of the present invention. For illustrative devices In a specific example of 300, a diode ink or suspension (having a diode 100-100K) is deposited on the conductor 31AJi. The second transparent conductor (with optical transmission, as discussed below) is deposited later (on the dielectric layer) Upper:: discussed below) to form a separate electrical contact with conductor 3, as illustrated in Figure 78. Although not separately illustrated, as an alternative, the illustrative device 7 may also have such a specific example 31〇a, 31〇b electrical connection: after the diode ink or suspension (with diode 1〇〇L) is deposited on the substrate 3〇5a, it can deposit - or a plurality of conductors 31〇A and 3 (in the case of interphase miscellaneous or comb-like structures) 'The dielectric layer 315 is then deposited on the conductor 310A. The first conductor 320 without optical transmission is subsequently deposited (as discussed below on the dielectric layer 315), and Having an interphase mismatch or comb structure to form with the conductor 3 1 〇B Single electrical contact, as illustrated in Figure 78 for device 300. As illustrated with respect to device 700 in Figures 80-82, to illustrate another structural alternative, second terminal 127 is coupled to one or more first conductors 31 and The first terminal 125 is coupled to the plurality of second conductors 320. Figures 81 and 91-98 also illustrate another embodiment suitable for the devices 300, 700, 720, 73 〇, 74 〇, 75 〇, 76 〇, 77 〇 Any one of the structural alternatives, wherein the carbon electrodes 322A^j22B are respectively coupled to the first conductor 31〇 and the second conductor 32〇 and extend beyond the protective coating 330 to be split 3〇〇, 7 〇〇 Providing electrical connection or connection. It should be noted that when the first conductor 310 has the interphase error 120 201218416 0 or comb structure illustrated in FIG. 77, the second conductor WO can be used by using the first conductor 31 〇 B The phase-to-phase mismatch or comb structure of the first conductor provides a turbulent balance such that each current path f through the first conductor 310A, the diode 1〇〇_1〇〇L, the second conductor, and the first conductor 310BI Qualitatively within a predetermined range. This is to minimize the distance that current must pass through the second transparent conductor. The resistance and the thermal lifetime are reduced, and current is supplied to all or most of the diodes 100_1〇〇]L at the same time and within a predetermined current level. In addition, the plurality of phases of the first conductor 3丨0 are mismatched or comb-like. The structures can also be connected in series, such as to generate a total device dust having a desired plurality of diodes (10)__ forward, such as, but not limited to, up to a typical household voltage. For example, as shown in FIG. For the first region 71丨 (where the diodes 100-100L are connected in parallel), the conductor 31〇B can be lightly connected to the conductor 3ι of the second region 712 (the diodes 100-100L are also coupled in parallel). Α or deposited as an integral layer with the conductor 310A of the second region 712, and for the second region 712 (the t diodes i 〇 0_100L are coupled in parallel), the conductor 31 〇 b can be coupled to the third region 713 (the second The conductors 3i〇a of the pole body 1〇〇_1〇〇L are also coupled in parallel or are deposited as a whole layer with the third region 713 “conductor 310A, and so on, so that the first and second regions (711, 712, 713) coupled in series, wherein each of the regions has a diode 1〇〇_1〇〇L coupled in parallel. This series connection can also be used for the specific examples of the systems 8A, 81A and the devices 706, 770 described in Figures 100-103. As also illustrated in FIG. 99, any phase miscellaneous or comb electrode structure can be energized by applying a voltage level to the bus bar 714 coupled to all of the respective tines (3 1 0 A 3 1 0B ). Row 714 is typically sized to have a relatively low sheet resistance or impedance with 121 201218416. Such current balancing and impedance matching (thin layer resistance matching) structures are not required for relatively small areas or for other applications (such as graphic art), and simpler first and second conductors 3 can be used. 1 〇, structure, such as the layered structure illustrated in Figures 91-98, 102, 103. For example, when the ratio of the sheet resistance of the first conductor and the second conductor 3 10, 320 to the total resistance of the first and second conductors 310, 320 together with the diode i 〇 0_i 〇〇 l is relatively small or relatively small, These layered structures can be used. Also as illustrated in Figures 1〇2 and 1〇3, a third conductive layer 3丨2 may also be used, such as for a relatively long device 300, 700, 720, 730, 740, 750, 760, 770 strips. Provide parallel busbar connections. Next, one or more dielectric layers 315 are left to leave the exposed first terminal 125 (in the first orientation) or the second side (back surface) of the diode 100_100κ (or the GaN heterostructure of the diode 100L) (in the second orientation) or both, sufficient to deposit one or more first conductors 31 (coupled to the diodes 100-100L) and deposited on the one or more dielectric layers 315 and The amount of electrical insulation between the first terminal 125 or the second side (back side) of the diode 100_100K (depending on the orientation) that forms a corresponding physical and electrical contact between the one or more second conductors 320 is deposited on the diode 100_100L on. For device 3, a luminescent (or emitting) layer 325, optionally present, may be deposited, followed by deposition of a stabilizing layer 335 and/or any lensing, dispersing or sealing layer 330 as appropriate. For example, the optionally present illuminating (or emitting) layer 325 can include a stokes shifting phosph〇r layer to produce a light that emits a desired color or other selected wavelength range or spectrum. Or other 122 201218416 : Install f. These various layers, conductors, and other deposited compounds are described below. For a farm 7GG, a lensing, dispersing or sealing layer 330-&amp; is deposited on the first side on - or a plurality of second conductors, and optionally illuminating (or emitting) ^ 325 can then be in the second The side is deposited on the substrate 305' to subsequently deposit the stabilizing layer of milk and/or any lensing, dispersing or sealing layer 33 as it appears. Depending on the position of the first and second conductors 31, the carbon electrodes 322A, 322B may be coated after deposition of the respective first and second conductors or after deposition of any lensing, dispersing or sealing layer 330. Carcasses and other deposited compounds are discussed in more detail below. Substrate 305 can be formed from any suitable material or include any suitable material such as, but not limited to, plastic, paper, cardboard or coated paper or paperboard. Substrate 305 can comprise any flexible material that has the strength to withstand the conditions of use desired. In an exemplary embodiment, the substrate 3〇5, 3〇5-8 comprises a substantially optically transmissive polyester or plastic sheet, such as treated to achieve print acceptability and available from Denver, c〇1〇rad〇, A ct_5 or CT_7 5 or 7 岔 lar Mylar thin plate purchased by MacDermid Autotype of MacDermid, USA, or Myiar, such as c〇veme acid treated. In another illustrative embodiment, substrate 3〇5 comprises, for example, a polyimide film, such as that available from Dup〇nt Corporation of Wilmington Delaware, USA.

Kapton® is also an exemplary embodiment in which the substrate 3〇5 contains a material having a dielectric constant sufficient or suitable for providing sufficient electrical insulation for the selected excitation voltage. Substrate 305 can comprise, for example, any one or more of the following: paper, coated paper, coated paper, fiber paper, cardboard, advertising paper, advertising boards, books, magazines, 123 201218416 newspapers, boards, plywood, and others. The selected form is based on paper or wood. . 'Plastic or polymeric materials (sheets, films, sheets, etc.) in any chosen form; natural and synthetic rubber materials and products in any selected form; natural and synthetic fabrics in any chosen form, including polymeric nonwovens ( Weaving, squirting and splicing non-woven fabrics; extruding concentrated smoke film, including (3) supporting film; glass, ceramics and other materials and products derived from bismuth or cerium oxide in any selected form: concrete (curing) , stone and other building materials and products; or any other products currently in existence or in the future. In the first exemplary and bulk example, the following substrates 3{)5, 3G5A may be selected, which provide a degree of electrical insulation: that is, having sufficient thickness to be deposited or coated on the first side of the substrate 3〇5 ( One or more of the first conductors 31 on the front are electrically insulated (dielectric constant or insulating properties that are electrically insulated from each other or electrically insulated from other devices or system components). For example, although glass sheets or tantalum wafers are relatively expensive options, they can also be used as substrate 305. However, in other exemplary embodiments, a plastic sheet or a plastic coated paper product is used to form the substrate 3〇5, such as the polyester described above or a patented paper stock available from Sappi Co., Ltd. and a 1 〇〇 ib overlay paper stock, Or similar coated paper obtained from other paper manufacturers (such as Mitsubishi paper Mills, Mead), and other paper products. In another example, a embossed plastic sheet or a plastic coated paper product having a plurality of grooves available from Sappi Co., Ltd., wherein the grooves are used to form the conductor 3 1 〇, is used. In other exemplary embodiments, any type of substrate 305 can be used, including, without limitation, having other sealing or encapsulating layers (such as plastic, lacquer, and vinyl) deposited onto one or the other of the substrates 3〇5. Substrate "Substrate 3 05, 305A may also comprise a laminate or other adhesive of any of the materials 124 201218416 described above. In an exemplary embodiment, the relatively small size of the sails on the substrate 3〇5, 3〇5a provides relatively fast heat dissipation and heat sheets, and makes a wide range of materials suitable for use as a substrate. 5, 3 smoldering temperature is relatively estimated ^ &amp; μ ll ^ 5 〇 to 5 (^ and other temperatures can include, for example, but not limited to, C Ge 5 0 C or more, Equation 7 S. Wide ten 1 c 〇〇 or 75C Or 75C or more, or 1〇(rc,^25t or 15〇c,u〇(rc, or 3〇(rc, and can be used, for example, (ISO 871:2006 standard measurement, 妒?)) is relatively low, for example ...the operating temperature of the second is also -125. "Cut a for about 15 generations, or less than about C, or less than about (10). C or less than about 7rc, or less than about the average operating temperature of one and temple + Λ丨, / ^ should be, for example (but not limited to) the device 3〇0, 700 is turned on and warmed up, such as to provide its maximum light output measurement, and can be used in Putian, ^, Knife in the sale of Man, The external thermometer is at a typical ambient temperature of about one, at the device 3, . . : = surface measurement operating temperature increment (and calculating the arithmetic mean). t Illustrative substrate 3 〇 5 illustrated in each figure 3G5A has a form factor that is flat and flat, such as: for example: a thin sheet of a selected material (such as paper or plastic) that can be fed through a printing press, and which can be in the first place, The degree of formation, the recess, the channel, and the groove have a shape including a rough surface and a concave eight-channel or groove or a person who is familiar with the technique in the first smoothness of the first smoothness. It should be understood that the shape and surface are considered equivalent and within the scope of the invention. 孓~, for use, for devices 300, 72〇, 73 1 1 1 接, such as via India 125 201218416, The brushing process coats or deposits one or more first conductors 310 (on the first side or surface of the substrate 3〇5:) or is applied to the second pole of the device 7〇〇, 74〇, 75〇 Body 00L is of a certain thickness, depending on the type of conductive ink or polymer, such as up to about 0.1 to 15 microns (eg, for typical silver ink or nanoparticle silver ink, about 10 microns to 12 microns wet film thickness) , dried or cured film thickness of about 0.2 microns or 〇.3 microns to ι In other exemplary embodiments, depending on the thickness of the coating, the first conductor 31 may also be sanded to smooth the surface and may also be calendered to compress the conductive particles (such as silver). In an exemplary method of fabricating an exemplary device 3ρ〇, 700, 720, 730, 740, 750, 760, 770, such as via a printing or other deposition process, conductive ink, polymer or other conductive liquid or colloid (such as silver (Ag) An ink or polymer, a nanoparticle or nanofiber silver ink composition, a carbon nanotube ink or a polymer, or a silver/carbon mixture, such as amorphous nanocarbon dispersed in a silver ink (its particle size is About 75 nm to 1 〇〇 nm)) is deposited on the substrate 305 or deposited on the diode l〇〇L, and then the cured bite portion is cured (such as via an ultraviolet (wv) curing process) to form one or more The first conductor 3 10 0. In another illustrative embodiment, a conductive compound or element such as a metal (eg, aluminum, copper, silver, gold, nickel) may be formed by sputtering, spin casting (or spin coating), vapor deposition, or electroplating. Or a plurality of first conductors 310. One or more composite first conductors 310 can also be produced using a combination of different types of conductors and/or conductive compounds or materials (e.g., ink, polymer, elemental metal, etc.). Multiple layers and/or multiple types of metals or other electrically conductive materials may be combined to form one or more first conductors 310, such as first conductor 31, including, for example, but not limited to, a gold plated layer on nickel. For example, gas 126 201218416 can be used. Phase deposited aluminum or silver or mixed carbon-silver ink. In various exemplary embodiments, a plurality of first conductors 3 are stacked, and in other embodiments, the first conductors 310 can be deposited as a single conductive sheet or otherwise attached (eg, coupled to substrate 305) Aluminum sheet) (not separately stated). Also in each of the embodiments, the conductive ink or polymer that can be used to form the one or more first conductors may be uncured or may be only partially deposited prior to depositing the plurality of diodes i 〇〇 丨〇〇 κ Curing, followed by 70 full cure upon contact with a plurality of diodes 1 〇〇 丨〇〇 , , such as to form an ohmic contact with a plurality of diodes i 〇〇 丨〇〇 κ. In an exemplary embodiment, the one or more first conductors 310 are fully cured prior to depositing a plurality of diodes 100·100 k, wherein the other compounds of the diode ink cause one or more of the first conductors 3 10 to be certain The degree of dissolution 'which is then re-solidified upon contact with a plurality of diodes 100-100 Torr, and for the device 700 embodiment, one or more first conductors 3 1 完全 are fully cured after deposition. Also for the device 700 embodiment, a conductive ink having a lower concentration of conductive particles may be used to form the one or more first conductors 3, thereby contributing to the first terminal 125 being resistant to moisture. Depending on the particular embodiment selected, an optically transmissive conductive material may also be used to form one or more first conductors 31'. Other conductive inks or materials may also be used to form one or more first conductors 310, second conductors 32, third conductors (not separately illustrated), and any other conductors discussed below, such as copper, tin, aluminum, gold. , precious metals, carbon, carbon black, carbon nanotubes ("CNT"), single or double or multi-wall cNT, graphite film, graphite film sheet, nano graphite sheet, nano carbon and nano carbon and silver Composition, nanoparticle and nanofiber silver composition with excellent or acceptable optical transmission, or other organic or inorganic conductive 127 201218416 polymer, ink, colloid or other liquid or semi-solid material. In an example, carbon black (having a particle size of about i nm) is added to the silver ink such that the resulting carbon concentration is in the range of about 〇〇25% to 〇5%, thereby increasing, one pole Ohmic contact and adhesion between the body l〇〇_l〇〇L and the first conductor 31〇 In addition, the first conductor 310 and the second conductor 32 can be formed equivalently using any other printable or coatable conductive material. And/or a third conductor, and exemplary conductive compounds include: (1) AG-500, AG-800, and AG-510 silver conductive inks from Conductive Compounds (Londonberry, nh, USA), which may also include other coatings uv_1 〇〇6s UV curable dielectric (such as a part of the first dielectric layer 125); (2) 7102 carbon conductor from Dup〇nt (if overprinted 5〇〇〇Ag), 7105 carbon conductor, 5〇〇〇 Silver conductor, 7144 carbon conductor (along with uv encapsulant), 7152 carbon conductor (together with 7165 encapsulant) and 9145 silver conductor; (3) 128A silver conductive ink from SunPoly, 129A silver and carbon conductive ink, 140A conductive Ink and 150A silver conductive ink; (4) PI-2000 series from Dow Corning Conductive silver ink; (5) from Henkel / Emers〇n &amp;

Electrodag 725A of Cumings; (6) Monarch Ml20 available from Cabot Corporation of Boston, Massachusetts, USA. It is used as a carbon black additive such as to be added to silver ink to form a mixture of carbon and silver inks; (7) Acheson 725A Conductive silver ink (available from Henkel) alone or in combination with other silver nanofibers; and (8) Inktek PA-010 or PA-030 nanoparticle or nanofiber available from Inktec, Gyeonggi-do, Korea Screen printing silver guide 'electric ink. As discussed below, these compounds can also be used to form other conductors (including the second conductor 320) and any other source of the 2012 201216 electrical trace or connector. In addition, the conductive ink and the compound may be used in a variety of other: using a plurality of first conductors 31 and a second conductor 32 of a conductive polymer having a translucent optical transmittance, or a third conductor, except In addition to any of the other transmissive conductors discussed and their equivalents 2, polyethylene-dioxe can also be used, such as polyethylene-oxygen available under the trade name "called ~ from P-ton N(4)(10)y, us A. Other conductive polymers that can be used equivalently include, for example, without limitation, polyaniline and polymeric polymers. In another illustrative embodiment, carbon that has been suspended or dispersed in a polymerizable ionic liquid or other fluid is used. The nanotubes form a variety of conductors that are substantially optically transmissive or transparent, two or more female conductors 32G. It should be noted that for the device 3 (10) specific example - or a plurality of second guides || 320 is generally substantially optical Transmissivity to provide greater light emission or absorption on the first side of the device, and for device specific examples 'unless light output is required on the first side' otherwise _ or multiple second conductors 320 are generally not optically visible Transmittance A relatively low electrical impedance is provided. In some exemplary device 700 embodiments, one or more second conductors 320 are highly opaque and reflective to act as a mirror and increase light output from the second side of device 700. Optically transmissive conductive inks for forming one or more second conductors 32A include those available from Tempe, Arizona, USA

Transparent conductive inks available from Technologies Worldwide, as described by Mark D. Lowenthal et al., February 28, 2011, entitled "Metallic Nanofiber Ink, SubstantUUy t 129 201218416

In the U.S. Provisional Patent Application Serial No. 6W447J60, the disclosure of which is hereby incorporated by reference in its entirety in its entirety in the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all Further, the transparent conductor is included in a solvent such as b-butanol 'cyclohexanol, glacial acetic acid (about! weight%) and a polyethylene core phase (mw is about (10) million) (about 2% by weight to 4% by weight' or More particularly, about 3% by weight of the silver nanofibers in the mixture (about 3% by weight to 5 〇 旦 里 里 〇 or more particularly about 4% by weight: to 40% by weight, or more especially about 5% by weight to 3〇重量。,:,, more especially from about 6% to 20% by weight ' or especially especially about 5% by weight... or more particularly from about 7% to 13% by weight., or, more particularly, about. Propylene glycol and about 1% by weight to 1% by weight of positive propane. 5% by weight of propanol) mixed with granules or nanofiber silver ink... PA-010 or PA_030 nanoparticle or nanofiber can be =nktGk water) (about 30% by weight to π% by weight). In addition, the silver ink conductive ink may be contained in a plurality of other inks mixed with the above-mentioned solvent (such as Inktek ΡΑ.010 or ΡΑ·〇3Τ〇 two or nanofiber silver screen printing silver conductive 霎Second, the phase of the τ ^ particles or the amount of nanofibers. Electro-ink) silver concentration of about 〇. 3 〇 weight. /. To 3· 有机 heavy organic semiconductors (also known as ... polymerized into metal) due to carbon atoms between the polymer main chain electropolymerization "Do not or semi-conductive. Its structure contains one-dimensional organic primary bonds,: a total light and inherent Conductively conductive after grounding. Fully studied type-1 or type 1-I conductive polymer category 130 201218416 » 'Including poly(acetylene), poly(° ratio), poly(thiophene), polyaniline, polythiophene , poly(p-phenylene sulfide), poly(p-phenylene vinylene) (PPV) and PPV derivatives, poly(3-alkylthiophene), polyfluorene, polyfluorene, polycarbazole, polychamomile ring, poly Nitrogen, poly(fluorene) and polynaphthalene. Other examples include polyaniline, polyaniline derivatives, polythiophenes, polythiophene derivatives, polypyrroles, polypyrrole derivatives, polybenzothiophene polybenzothiophene derivatives, Poly-p-phenylene, poly-p-phenylene derivative, polyacetylene, polyacetylene derivative, polydiacetylene, polydiacetylene derivative, polyparaphenylene vinylene, polyparaphenylene 6 derivative , polycai, and polynaphthalene derivatives, polyisophthalene porphin (PITN), Shenhefang The base may be, for example, a thiophene, a cough or a ruthenium, a poly(aryl) phenylene group (Parv), a polyphenylene sulfide (PPS), a poly(naphthalene) (PPN), a polyp phthalocyanine (pphc), etc., and Derivatized di copolymers and mixtures thereof. The term derivative as used herein means that the 3H polymer is formed from a monomer substituted with a side chain or a group. The method of polymerizing the conductive polymer is not particularly limited, and includes, for example, (However, it is not limited to ^^ again electromagnetic polymerization, thermal polymerization, electrolysis I, chemical oxidative polymerization and catalytic polymerization of polymers are often neutral and not conductive until doped ^ square, in which the polymer embraces ~, noisy Therefore, the P-type doping or the n-type doping is used to make the material. The semiconductor is converted into a conductive polymer by a specific doping. It is used for doping; It can accept electrons for the temporary 4 such as Lewis acid (Lewisaci... real: sub-substance, acid derivative (such as for acid, polystyrene, sulfuric acid, organic camphorsulfonate, alkene A to enelic acid, Alkylbenzenesulfonic acid, iron. Pit "acid, complete, etc.", ferric chloride, copper chloride and sulfuric acid 131 2 01218416 It should be noted that for the apparatus 300 configuration of "U.S.", an optically transmissive substrate 305 and one or more flutes are provided to pass light through the substrate 305. The second side enters and/or leaves. In addition, when the second conductor 32 is also transparent, the light can be emitted or absorbed on either side of the device 300 or on both sides of the device 3〇〇. 3 10 may have a variety of textures, such as having a relatively smooth surface, or instead having a rough or pointed surface, or an engineered micro-embossed structure (e.g., available from Sappi Co., Ltd.) to potentially improve other layers ( Adhesion, such as dielectric layer 315), to facilitate subsequent ohmic contact with diodes (10). One or more first conductors 31A may also be corona treated prior to depositing the diode 100-100L, which tends to remove any oxide that may have formed and also facilitates subsequent and plural The polar body 10 (M00L forms an ohmic contact. Those skilled in the art are familiar with electrons or prints, and the skilled person will be able to form - or a plurality of variations of the first conductor 3 1 G t mode, all of which are considered equivalent and in the scope of the invention By way of example (but not limiting), one or more first conductors 310 may also be deposited via shovel or vapor deposition. Additionally, for other specific examples, such as via coating, printing, splashing Plating or vapor deposition deposits one or more first conductors 310 in a single or continuous layer. Thus, "depositing" as used herein includes any and all printing, including impact or non-impact, as is known in the art. Coating, rolling, spraying, laminating, splashing, electrominening, spin-washing (or spin coating), vapor deposition, lamination, attachment, and/or other deposition processes. "Printing" includes this technology. Impact or non-impact type known in the Any and all printing, coating, roll, spray, 132 201218416 layering, spin coating, lamination and/or attachment processes, and especially including, for example, but not limited to, screen printing, inkjet printing, electro-optical printing , ink printing, photoresist and other resist printing, thermal printing, laser printing, magnetic printing, pad printing, fast drying printing, mixed lithography, Gravure and other concave printing. All such processes are considered herein as deposition processes and are available for use. Exemplary deposition or printing processes do not require significant production control or limitation. No specific temperature or pressure is required. Some sort of clean room or filtered air may be used, but The extent may be consistent with standards for known printing or other deposition processes. However, for consistency, such as to properly align (align) the layers deposited sequentially to form each specific instance, a relatively constant temperature may be required (with possible exceptions) , as discussed below) and humidity. In addition, the various compounds used may be contained in various polymers, binders or other dispersants, which may be thermally cured or dried. Air drying, or ir or heart cure under ambient conditions. It should also be noted that generally any coating of various compounds herein, such as via printing or other deposition, may also be used, for example, by using a resist coating or by The "wetability" of the surface is otherwise modified, for example by modifying the surface (such as the surface of the substrate 305, the surface of each of the first or second conductors (310, 32 Å, respectively) and/or the diode 100- 100L surface: broadness: hydrophobic or electrical (positive or negative) characteristics to control surface properties or surface energy. Together with the deposited compound, suspension ^ = ink characteristics (such as surface tension), The deposited compound 'is required or selected, and effectively avoids other areas. For example (but not limited), use any evaporative or volatile 133 201218416 organic or inorganic compounds (such as water, alcohol, scales) Etc.) 1〇〇-fox is suspended in a liquid, semi-liquid or colloidal carrier, or;::::: component (such as resin) and / or surfactant or other flow aid:: : = Word (but Limitation) a plurality of, i and materials described in the embodiment (iv). Surfactants or glidants may also be used, such as octanol, -, isopropanol or deionized water, and binders may also be used, such as nickel beads containing, for example, 1 micron or less. Anisotropic conductor # conductive injection adhesive (which provides conductivity and is available, for example, after compression and curing, J to improve or enhance the shape of ohmic contact

Or any other UV or hollow 齑A ..., A two-hole cured adhesive or polymer, including those discussed in more detail below (and which may also be used with dielectric compounds, lenses, etc.). In addition, each of the diodes 100 can be configured to be, for example, a light-emitting diode having any of a variety of colors such as red, green, ochre, yellow, amber white, and the like. Light-emitting diodes (10) having different colors are entangled in the exemplary diode ink to produce a selected color temperature when energized in the devices 3〇〇, 3〇〇α. Dry or Cured Diode Ink Example j: A composition comprising: a plurality of diodes 100-100 L; and a cured or polymerized resin or polymer. Dry or Cured Diode Ink Example 2: A composition comprising: a plurality of diodes 100-1 〇〇L; and 134 201218416*. A cured or polymerized resin or polymer formed at least partially around each A diode having a thickness of about 10 n-m to 300 nm. Dry or Cured Diode Ink Example 3: A composition comprising: a plurality of diodes 100-100 L; and at least traces of a cured or polymerized resin or polymer. Dry or Cured Diode Ink Example 4: A composition comprising: a plurality of diodes 100-100 L; a cured or polymerized resin or polymer; and at least traces of solvent. Dry or Cured Diode Ink Example 5: A composition comprising: a plurality of diodes 100-100 L; at least traces of a cured or polymerized resin or polymer; and at least traces of solvent. Dry or Cured Diode Ink Example 6: Contains the following composition: a plurality of diodes 100-100L; a cured or polymerized resin or polymer; at least traces of solvent; and at least traces of surfactant . Dry or Cured Diode Ink Example 7: Contains the following composition: 135 201218416 a plurality of diodes 100-1 00L; at least traces of cured or polymerized resin or polymer; at least traces of solvent; At least trace amounts of surfactant. Subsequent deposition of the diode ink (suspended diode 1〇〇_1〇〇 [and optionally inert particles) in device 700, such as by printing with a 280 mesh web coated with polyester or PTFE The substrate 3〇5A is deposited on one or a plurality of first conductors 31 of the device 300 embodiment, and the volatile or evaporative components are dissipated, such as via heating, uv curing, or any drying process to leave two The pole body 100_100L is substantially or at least partially in contact with and adheres to the substrate 305A or the one or more first conductors 31A. In an exemplary specific example, 'at, about i! 〇. The deposited diode paste is cured for 5 minutes, for example, or less than 5 minutes. Example of a dry or cured diode ink. The dried or cured diode ink typically contains a plurality of diodes 100L and a cured or polymerized resin or polymer (at least in trace amounts) ( It may generally hold or hold the diode 1〇〇_1〇〇L in place as described above, and form the film 295 as previously discussed. Although the volatile or evaporating hydrazine component (such as the first and/or second solvent and/or surfactant) is substantially dissipated, traces or more may be left, such as dried or cured diode ink embodiments. As explained in 3-6. As used herein, the "trace amount" component should be

The solution is an amount greater than zero but less than or equal to 5% of the amount of the component originally present in the monolithic ink as compared to the initial deposition on the first conductor 310 and/or the substrate 305, 3〇5A. The density or concentration of the resulting diode 100-100L in the device (3〇〇, 3 00A, 300B, 300C, 300D, 700, 136 201218416 700A, 700B, 720, 730, 740, 750, 760, 770) (For example, the number of 100-100L per square centimeter of the diode) will depend on the concentration of the diode 1〇〇_1〇〇L in the diode ink. When the size of the diode 1 〇〇-1 〇〇L is in the range of 2 μm to 3 μm, a very high density can be used but only a small percentage of the surface area is covered (one advantage is that a larger degree is allowed) Heat dissipation without the need for a heat sink). For example, when a diode 100-100L having a size in the range of 2 Å to 3 μm is used, 1 一 in one square 〇, the 二 diode covers only about 1% of the surface area. Also for example, in an exemplary embodiment, for devices 300, 300A, 300B, 300C, 300D, 700, 7〇0a, 7〇〇B, 720, 730, 740 '75〇, 76〇, 77 A variety of diode densities are available in the crucible and are within the scope of the present invention, including (not limited to): 2 to 1 Å per square centimeter, and 1 〇〇 1 〇〇 L for a diode; 5 to 10,000 diodes per square meter, 1〇〇_1〇; fly more especially, mother square centimeters 5 to M00 diodes (10) q sails; or more specifically, every 1 poles 100- 100L; or more particularly, each A-pole diode 1GG-1GGL; or more specifically, 5 to 50 100 ιοητ · -3⁄4 ® - 5 to 25 diodes per square, or more particularly, per square metre * m 8 or more in particular, i poles per square centimeter: 100 10 ΛΤ · · +, 丄 丄 4 King 5'000 diodes 100-100L' or more especially '2 100 ιηητ per square centimeter. Ten 丄 4 The main L000 diodes are 100-100L, or more particularly, 2 10 Ω ιηητ · + * to 10 二 diodes 1 〇〇-fox per square centimeter, or more particularly 25 _ 10 CM00 L per square centimeter. One pole can also use other steps or several steps to process the pole

100-100L 137 201218416 is deposited on one or more first conductors 3 10 . Also by way of example, but not limitation, a binder may be deposited first, such as a ethoxylated glycol ether acrylate monomer (which may also include a water soluble photoinitiator such as Tp(R) (2,4,6 Trimethylbensyl)triphosphene oxide, an anisotropic conductive binder, followed by deposition of a diode 100-100L that has been suspended in a liquid or colloid as discussed above. In a specific example, for a device 3〇〇, 72〇, 73〇, 76〇 specific example, the diode 10 (M00K suspension medium may also contain a dissolved solvent or other reactants, such as one or more dibasic esters, initially Dissolving or reweting some of the first conductors 31 of the one or more first conductors 310. When depositing a plurality of suspensions of the diodes ιο〇-ιοοκ and the surface of the one or more first conductors 31 When partially dissolved or uncured, a plurality of diodes 100-100K may be slightly or partially embedded in one or more first conductors 31, which also contribute to the formation of ohmic contacts, and the plurality of diodes 100_100K and Adhesion between one or more first-guided It 31() Or adhesively pure/dissipated by evaporation or reactants such as by evaporation, so that one or more first conductors 310 are hardened (or resolidified) when substantially contacting a plurality of diodes 1〇〇_ι〇〇κ In addition to the binary g of the above, exemplary solubilizing, wetting or solvating agents such as, but not limited to, also include propylene glycol monomethyl phthalate (c6Hl2〇3) as described above (by Eastman) The name "pM Acetate" is sold) 'It is used in a molar ratio of about 1:8 molar ratio (or 22:78 by weight) to propanol (or isopropanol); and a variety of binary vinegars, and Mixtures such as Dingyigyiyijiag, adipic acid dimethyl vinegar and sebacic acid dicetone vinegar (different mixtures can be dried from Invista under the product name, face_2, delete _3, 138 201218416 round-4, DBE_5, Dm_6, face 9 and · m are obtained. In an exemplary embodiment, the job -9 is used. The molar ratio of the solvent will vary based on the selected solvent, and the towel and 1.12 are typical ratios. Use various compounds or other reagents to control this reaction: for example, a group or mixture of 1-propanol and water can be used Suppressing the inhibition of one or more first conductors 31 through the egg _9 dissolving and then rewetting f to relatively late in the curing process. The various compounds in the diode ink have evaporated or otherwise dissipated and the thickness of the diode ink It is less than the height of the diode ' ΜΟΟΚ ' 'thus any dissolved material of the first conductor 31Q (such as silver ink resin and silver ink particles) is not deposited on the upper surface of the diode ιοο-ιοοκ (the diodes 1〇 〇_1〇〇κ can then form an electrical contact with the first conductor 320. The dielectric composition is as follows: a composition comprising: a dielectric resin comprising from about 0.5% to about 30% methylcellulose resin; a solvent comprising an alcohol; and a surfactant. Dielectric Ink Example 2: A composition comprising: a dielectric resin comprising from about 4% to about 6% of a mercapto cellulose resin; a first solvent comprising from about 0.5% to about 1.5% octanol; A solvent comprising about 30/. Up to about 5% ΙΡΑ; and surfactant. Dielectric Ink Example 3: comprising the following composition: 139 201218416 about 10% to about 30% of a dielectric resin; a first solvent comprising a glycol ether acetate; a second solvent comprising a glycol ether; And a third solvent. Dielectric Ink Example 4: comprising the following composition: from about 10% to about 30% of a dielectric resin; a first solvent comprising from about 35% to 50% ethylene glycol monobutyl ether acetate; a second solvent, It comprises from about 20% to 35% dipropylene glycol monoterpenes; and a third solvent comprising from about 0.01% to 0.5% toluene. Dielectric Ink Example 5: Contains the following composition: about 15. /. Up to about 20% of a dielectric resin; a first solvent comprising about 35% to 50% ethylene glycol monobutyl ether acetate; and a second solvent comprising about 20% to 35% dipropylene glycol monomethyl sulphide; A trisolvent comprising from about 1% to about 0.5% of stupid. Dielectric Ink Example 6: A composition comprising: from about 10% to about 30% of a dielectric resin; a first solvent comprising from about 50% to about 85 Å. Dipropylene glycol monomethyl; and a second solvent comprising from about 1% to about 0.5%. Dielectric Ink Example 7: A composition comprising: about 15% to about 20% dielectric resin; 140 201218416 «• · First bath containing about 50% to 90 〇/〇 ethylene glycol Monobutyl ether acetate; and a first/mixture' which comprises from about 0.01 〇/〇 to 0.5% toluene. Dielectric Ink Example 8: A composition comprising: from about 15% to about 2% by weight of a dielectric resin; a first bath comprising from about 50% to 85% dipropylene glycol monodecyl ether; and the balance. The mash is comprised of a second solvent comprising from about 〇1% to 8·0 °/. Propylene glycol or deionized water. An insulating material (referred to as a dielectric ink, such as a dielectric ink described as Dielectric Ink Example I-8) is deposited on the diode, such as via a printing or coating process, prior to the deposition of the conductor 32. 100-100 L·upper or a peripheral or lateral portion of the diode 100 100L to form an insulating or dielectric layer 3 15 . The wet film thickness of the dielectric layer 315 is approximately from about 30 microns to about 40 microns and the dried or cured film thickness is approximately about 5 microns i 7 microns. The insulating or dielectric layer 3丄5 &quot;Τ 3 I floats any insulating or dielectric compound in any of a variety of media as discussed above and below. In an exemplary embodiment, the insulating or dielectric layer 315 comprises a fluorenyl cellulose resin in an amount ranging from about 5% to about 1,500, or more particularly from about 1.0% to about 8%, or more particularly In the range of from about 3.0% to about 6-% by weight or more particularly in the range of from about 45% to about 55%, such as Ε3 "methocel" available from Dow Chemical; and surfactants, The amount is between about 1% and 15%

Within the range, or more particularly in the range of from about 0.2% to about 1%, or more particularly from about 0.4% to about 0.6%, such as 0.5% BYK 381 from Βγκ Chemie GmbH 141 201218416; suspended in the following In the solvent: the first solvent, in an amount ranging from about 0.01% to 0.5%, or more particularly in the range of from about 5% to about 0.25%, or more particularly from about 8% to about %12%. Within, such as about 0.1% octanol; and a second solvent, in an amount ranging from about 〇〇% to 8%, or more particularly from about 1.0% to about 7%, or more particularly about 2.0% To a range of about 6.0%, or more particularly in the range of about 3% to about 5%, such as about 4% hydrazine, the balance being a third solvent, such as deionized water. Four to five coatings were deposited with the yttrium-3 formulation to form an insulating or dielectric layer 315 having a total thickness of approximately 6 microns to 10 microns, with each coating cured at about 110 C for about 5 minutes. In other exemplary embodiments, dielectric layer 315 may be IR (infrared) cured, MV cured, or both. In other exemplary embodiments, different dielectric formulations may be coated into different layers to form an insulating or dielectric layer 3 15 ; for example, but not by way of limitation, coated by Henkel available from Dusseldorf, Germany The first layer of solvent-based transparent dielectric formed by the company, such as Henkel BIK-201 8 1-40 A, Henkel BIK-20181-40B and/or Henkel BIK-20181-24B, followed by coating as described above The water-based E-3 formulation forms a dielectric layer 3 15 . In other exemplary embodiments, other dielectric compounds are commercially available from Henkel and can be used equivalently, such as in dielectric ink embodiment 8. The dielectric layer 3丨5 may be transparent, but may also include, for example, without limitation, relatively low concentrations of light diffusing, scattering or reflective particles and thermally conductive particles such as aluminum telluride. In various exemplary embodiments, the dielectric ink will also wet the surface of the diode 1〇〇_1〇〇l to at least some of the first terminal 125 or the second side (back side) of the diode 100dOOK. (depending on the orientation) exposure to subsequent contact with the second conductor 142 201218416 320 一 In the case of an inconvenient singular Lt electro-ink, one or more types of dry electrodes can be used, such as (but not limited to): water酧] not steep agent, such as i-propanol, 2-propanol (iso-n-propanol (including butanol (including h butanol, 2% in %), isobutanol, positive ^ 2 · butanol) , n-pentanol (including) alcohol, 3-pentanol), n-octylpentanol, 2-pentane such as... including i*2-octanol, 3·octanol); acid, two Gekou T i Ethyl ether, 7 ethane gorge, ethyl propyl ether and ethyl polyetherate, adipic acid ', 6 曰, such as ethyl acetate, butane 1 propylene glycol monomethyl (tetra) acetic acid, glutaric acid II - Yiyi Methyl ester, glycerol acetate, dibasic ester DBE-9); ^ , ^ , invista - hydrazine such as ethyl acetate; diol, such as ethylene glycol, - alcohol, polyethylene glycol, propylene, samar n alcohol, dipropylene glycol, glycol ether, Glycol ether acetate, PM 妒 &&amp;&&amp;&amp;&amp;&amp;&amp;&gt; propylene glycol monomethyl ether acetate, dipropylene glycol monomethyl ketone, ^ diol early butadiene acetate acetic acid; carbonic acid, such as carbonic acid Propylene vinegar; glycerin, shigan' from acetonitrile, tetrahydrofuran (THF), dimethylformamide (DMF), N-methylformamide (NMF), dimethyl sulphate (DMs); Mixtures. Other solvent-based resins may be used in addition to the water-soluble resin. It may be used with or a plurality of thickeners such as viscous, such as bell-tonite clay, garamite clay, organically modified clay; Sugars and polysaccharides, such as guar gum, Sanxian gum; cellulose and cellulose, such as methyl cellulose, methyl cellulose, ethyl cellulose, propyl, cellulose, methoxy fiber , methoxymethylcellulose, methoxypropylmethylcellulose, hydroxypropylmethylcellulose, carboxymethylcellulose, hydroxyethylcellulose, ethylhydroxyethylcellulose, cellulose Shout, cellulose ether, polyglucamine; polymer, such as acrylate and (meth) acrylate polymerization And copolymer, polyvinylpyrrolidine 143 201218416 y polyethylene glycol, polyacetate vinegar (PVA), polyethylene glycol, polyacid, polyethylene oxide, polyvinyl butyral (._ WVD;, - Ethylene, Ethanol, 2-ethyl, Oxygen, smog-like cerium oxide (such as Shishi Shifen powder plant, sulphur dioxide powder; and modified urea, such as Βγκ@42〇 (from _ Others can be used, as well as the addition of particles for the viscosity of the Lewis et al., U.S. Patent Application Publication No. U. No. 1647. Also, such as a glidant or a surfactant, F_blast milk such as octanol and Emerald High Performance Materials &quot;(8)d Performance Materials). In other exemplary embodiments, the one or more insulators 135 gamma are polymers, such as containing typically less than 12% PVA or ugly in the deionized water. After arranging the insulating or dielectric layer 315, the sinking is referred to as, for example, via printed conductive ink, polymer or metal thereof, '纟 can be any of the types of conductors discussed above, #electro-ink or polymer, or can be An optically transmissive (or transparent) conductor forms an ohmic contact with an exposed or uninsulated portion of the pole body 100-10GL ("typically a diode (10)] sail 2 first terminal 125 in a first orientation). The wet film thickness of the one or more optically transmissive second conductors 320 is approximately 6 microns to 18 microns and the dried or cured film thickness is approximately from about 1 micron to about 4 microns, and is optically opaque or multiple The wet film thickness of the two conductors 32 Å (such as Aches 〇n conductive silver) is generally about 14 microns to 18 microns and the dried or cured film thickness is about 5 microns to 8 microns. For example, the optically transmissive second conductor can be deposited as a single continuous layer (forming a single electrode), such as for illumination or optoelectronic applications. For the reversed configuration described above, and for the embodiment of 144 201218416, the second conductor 320 need not be optically transmissive (although it may be optically transmissive) to allow light from the device 3〇〇, 3〇〇A, 3〇〇 b. The top and bottom surfaces of 300C, 300D, 700, 700A, 700B, 72〇, 73〇, 74〇, 75〇, 760, 770 enter or leave. The optically transmissive second conductor 320 can comprise any compound that has sufficient conductivity to energize or receive energy from its first or upper end portion (and may or may not be necessary, generally sufficient) Low resistance or impedance to reduce or minimize power loss and heat generation); and (2) at least a predetermined or selected transparency or transmittance for electromagnetic radiation of a selected wavelength (part of the visible spectrum). The selection of the material forming the optically transmissive or non-transmissive second conductor 32 is different depending on the selected application of the device 3, 7 且 and the presence or absence of a plurality of third conductors. Exposing one or two = two conductors 32 于 to a diode, such as by using a printing or coating process known or soon to be known in the art of coating or coating, is exposed and/or non-existent The knives, and/or are also deposited on any insulating or dielectric layer 315, where appropriate control may be provided to achieve alignment or alignment, as necessary or desired. For example, an exemplary r-conductive ink used to form one or more second conductors 320 may comprise from about 0.4% to about 3% silver nanofibers (or 3,0%: upper 'in other In a specific example), about 2% to 4% polyethylene d is more than pyrrolidone (10), 0.5% to 2% glacial acetic acid, and the remainder is u butanol and/or ring in an exemplary embodiment, except In addition to the conductors described herein, CNT, nanoparticle or nanofiber silver, polyethylene-145 201218416 monooxythiophene (eg AGFA Orgacon), poly-3,4_ethylene oxide Combination of thiophene and polystyrene acid (sold by Baytr〇np and available from

Leverkusen, Bayer Ag, Germany), polyaniline or polypyrrole polymer, indium tin oxide (IT〇) and/or antimony tin oxide (AT.) (where IT〇 or ΑΤΟ is usually suspended in the form of particles as previously discussed The optically transmissive second conductor 3 20 is formed in any of a variety of adhesives, polymers or carriers. In one example, the carbon nanotubes are suspended in a volatile liquid containing a surfactant, such as carbon obtained from Southwest U.S. Techn〇l〇gies, Inc., N〇rman, 〇kUh〇ma, USA. Nanotube composition. Additionally, the impedance or resistance is relatively low - or a plurality of third conductors (not separately illustrated) are incorporated or can be incorporated into the respective transmissive second conductor 320. For example, a, to form one or more third conductors, a conductive ink or polymer printed on a corresponding portion or layer of the transmissive first conductor 320 (eg, silver ink, CNT or polyethylene-dioxythiophene polymerization) may be used. Forming one or more fine wires, or forming one or more fine wires (eg, having a grid) using conductive ink or polymer printed on a larger, unitary transparent first conductor 320 in a larger display Or trapezoidal pattern). Other compounds that can be used equivalently to form the substantially optically transmissive second conductor 32〇 include indium tin oxide (IT〇) as described above, and other transmissive conductors currently known or likely to be known in the art. Included in one or more of the conductive polymers discussed above, such as polyethylene-dioxythiophene, which is known under the trade designation "〇rgac〇n", and various transparent conductors based on carbon and/or carbon nanotubes. Representative transmissive conductive materials can be obtained, for example, from Dup〇nt, such as the 7162 and 7164ATO translucent conductors. The second conductive conductor 32 can also be combined with 146 201218416, a polymer or a carrier, including the previously discussed adhesive 聚合物b polymer or carrier, such as being curable under various conditions (such as exposure to ultraviolet light) Light shot curable Uv curable)) adhesive. The stabilization layer 335, which may or may not be necessary, may sink to the second conductor 320i' and serve to protect the second conductor 32. The conductivity of the second conductor 32 is degraded by preventing the occurrence of a (or "spraying" layer 325 or any intervening conformal coating. One or more relatively thin coatings may be formed using any of the inks, compounds or coatings discussed below (with reference to protective coating 330): Nazdar 9727 transparent substrate or DuP〇nt 5〇18 or infrared light curable^ ° such as about 7 ❶ / 〇 polyvinyl butyral in J hexanol. In addition, the stable two layers 335 may also include heat dissipation and/or light scattering particles as appropriate. For example, Kb ^ &amp; dry or @化 form is usually from Xiao to micron. As an alternative, a carbon electrode 322 (illustrated as 322A and

32 is said to form a contact with the plurality of first conductors W = or a plurality of second conductors H 320 outside the sealing or protective layer 33 (), as illustrated for each exemplary housing example - to help protect one or The plurality of first conductors (four) and the one or more second guides 320 are protected from corrosion and wear. In an exemplary embodiment, a carbon ink, such as Aches〇n, has a wet film thickness of approximately ::18 microns to 20 microns and a dried or cured film thickness of from about 7 to 1 micron. As an alternative illustrated in FIGS. 102 &amp; 103, a second conductive layer 312 can be used and can include one or more first conductors 310 and/or one or more second conductors 32 herein. Any of the electrically conductive materials described in 147 201218416. One or more luminescent (or emitting) layers 325 (eg, comprising one or more phosphor layers or coatings) are deposited on the stabilization 335 ± (or when the stabilization layer 335 B is not used, deposited on the second conductor 32 The substrate is deposited directly on the second side of the substrate 3〇5-8 of the device 700 embodiment. A plurality of illuminating (or emitting) layers 325 can also be used, such as illustrated, such as devices 3〇〇, 3〇〇a, 3〇〇c, 300D, 700, 700A, 720, 73〇, 74〇, 75〇, A light-emitting (or emission) layer 325 is provided on each side of the 76 〇, 77 。. In an exemplary embodiment (such as an LED specific example) +, a stipulation (but not limiting), one or more emissive layer milk may be deposited on device 300, such as via a printing or coating process as discussed above. The stabilization of the example | 335 is deposited on the entire surface (or deposited on the second conductor 32 when no stabilization layer 335 is used), or deposited directly on the second side of the substrate 3〇5A of the device 700 embodiment, Or both. - or a plurality of emissive layers 325 may be any light that can or is adapted to emit light in the visible light (or other electromagnetic radiation) emitted from the diodes H) (or other electromagnetic radiation) or to cause the emitted light ( Or a material or compound formed by any other electromagnetic shift of the selected frequency (eg, Stokes shift). For example, the emission layer 325 based on the yellow illuminant can be used with the blue fox S that emits blue light. To produce substantially white light. The illuminating 5 materials include various phosphors, which may be provided in any of various forms and in various dopants of the plaque. Forming - or emitting a plurality of sounding milk The luminescent compound or particle may have a polymer of various binders: used or suspended, and may be combined with various binders, such as phosphor binders available from __ or Conductive Compounds, to help 148 201218416. Printing or other deposition processes, and bonding the phosphor to the underlying layer and subsequent overlying layers. One or more emissive layers 325 may also be provided in a "curable or thermally curable form." Multiple equivalent luminescence or other light emission Sex Compounds are useful and within the scope of the invention, including (without limitation): (1) G1758, G2060, G2262, G3161, EG2762, EG 3261, EG3560, EG3759, Y3957, EY4156, EY4254, EY4453, EY4651, EY4750, 05546, 05 5 44, 05 742, 06040, R630, R65 0, R6733, R660 ' R670, NYAG-Bu NYAG-4, NYAG-2, NYAG-5, NYAG-3, NYAG-6, TAG-1, TAG-2, SY450-A, SY450-B, SY460-A, SY460-B, OG450-75, OG450-27, OG460-75, OG460-27, RG450-75 'RG450-65, RG450-55, RG450-50, RG450- 45, RG450-40, RG450-35, RG450-30, RG450-27, RG460-75, RG460-65, RG460-55, RG460-50, RG460-45, RG460-40, RG460-35, RG460-30 and RG460-27, available from Intematix, Fremont, California, USA; (2) 13C1380, 13D1380, 14C1220, and GG-84, available from Global Tungsten &amp; Powders, Towanda, Pennsylvania, USA; (3) FL63/S -D1, HPL63/F-F1, HL63/S-D1 ' QMK58/F-U1 ' QUMK58/F-D1 &gt; KEMK63/F-P1 &gt; CPK63/N-U1, ZMK58/N-D1 and UKL63/F -U1, available from Phosphor Technology of Herts, England Limited (4) BYW01A/PTCW01AN, BYW01B/PTCW01BN, BUVOR02, BUVG01, BUVR02, BUVY02, BUVG02, BUVR03/PTCR03 and BUVY03, available from Lithia Springs, Georgia, USA Phosphor 149 201218416

Tech Corporation is paid, and (5) Hawaii655, Maui535, Bermuda465 and Bahama560 are available from Lightscape Materials of Princeton, New Jersey, USA. Additionally, colorants, dyes, and/or dopants may be included in any such luminescent (or emitting) layer 325, depending on the particular embodiment selected. In an illustrative embodiment, a yttrium aluminum garnet ("YAG") illuminant is used, which is available from Phosphor Technology.

And the Global Tungsten &amp; Powders company, such as MV curable resin with 40% YAG (whose wet film and dried / cured film thickness of about 4 〇 to 1 〇〇 micron), or infrared light with 70% YAG Curing resin-solvent system (such as about 5% polyvinyl butyral in about 95% cyclohexanol) (having a wet film thickness of about 15 microns to 17 microns and a dried/cured film thickness of about 13 microns to 15) The micron) or other compound used to form the emissive layer 325 can include a dopant that emits in a particular spectrum, such as green or blue. In these cases, the emissive layer can be printed to define pixels of any given or selected color (such as RGB or CMYK) to provide a color display. Those skilled in the art will appreciate that any device 300 embodiment may also include the one or more emissive layers 325 coupled to or deposited on the stabilizing layer 335 or the second conductor 32A. Depending on the solvent used to form the one or more second conductors 32, one or more barrier layers 3 1 8 may be used as appropriate, as illustrated in FIG. 103, such as to prevent one or more second The conductor 32 〇 compound penetrates the dielectric layer 315 to the one or more first conductors 3 1 0 » In an exemplary embodiment, a viscosity modifier, such as an E-ίο viscosity modifier, or any of the above discussed Other viscosity modifiers 'deposited to form a cured 150 201218416 or dried film or film thickness from about 丨〇〇ηιη to 200 nm. Any of the barrier screens 318 may also be formed using any of the materials used to form the protective or sealing coating 330 or stabilizing layer 335. θ • ^ 300 may also include a protective or sealing coating 33 视 as appropriate (which may also be combined with a stabilizing layer 335 as may be present), which may also include any type of lensing or light diffusion or dispersion Structures or filters, such as substantially transparent plastic or other polymers to provide protection from various factors such as weather, airborne corrosive materials, etc., or such sealing and/or protective functions may be provided by the emissive layer 325 used in the polymer (resin or other adhesive). For convenience of explanation, Figures 76, 78-82, 87, 88, 91-98, and 103 use a dotted line to form a polymer (resin or other adhesive) that forms a protective or sealing coating 3 3 以Indicates substantial transparency. In an exemplary embodiment, an amino phthalate-based material such as a specialty resin available from NAZDAR 9727 (www.nazdar.com) or a wv curable acrylate amine available from Henkel Corporation of Dusseldorf, Germany is used. The formate PF 455 BC) deposit protects or seals the coating 33 as one or more conformal coatings to a thickness of from about 10 microns to about 4 microns. In another illustrative embodiment, the protective or sealing coating 330 is achieved by laminating s 3 . Not separately described, but as disclosed in the related U.S. Patent Application Serial No. 12/560,334, U.S. Patent Application Serial No. 12/56, No. 34, U.S. Patent Application Serial No. 12/560,355, U.S. Patent Application Serial No. U.S. Patent Application Serial No. 12/560, 364, and U.S. Patent Application Serial No. Serial No. Serial No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. (suspended in Polymer 151 201218416 (resin or other binder)) may also be deposited directly onto one or more of the emissive layer 325 and other features to form any of a variety of specific examples of illumination devices. Those skilled in the art will appreciate that any number of first conductors 31, insulators 315, second conductors, and the like can be utilized within the scope of the claimed invention. In addition, in addition to the orientation illustrated, any of the plurality of first conductors 310, one or more insulators (or dielectric layers) 315, and a plurality of second conductors 320 of any device (and any incorporated therein) There may be multiple orientations and configurations, such as substantially parallel orientation, depending on the presence of one or more third conductors. For example, the plurality of first conductors 31 can be substantially parallel to each other, and the plurality of second conductors 32 can also be substantially parallel to each other. Subsequently, the plurality of first conductors 310 and the plurality of second conductors 320 can be perpendicular to each other (delimiting columns and rows) such that their overlapping regions can be used to define pixels ("pixels") and can be individually and independently addressed. Any one or both of the plurality of first conductors 31 and the plurality of second conductors 0 may be constructed to have spaced and substantially parallel lines between predetermined widths (both defining columns or both defining rows) It may also be addressed by columns and/or rows, such as, but not limited to, sequential addressing of the columns in succession. Alternatively, either or both of the plurality of first conductors 3丨〇 and the plurality of second conductors 320 may be constructed as a layer or sheet as described above. As can be seen from the present invention, depending on the choice of composite material (such as substrate 3〇5), exemplary devices 3〇〇, 3〇〇a, 300B, 300C, 300D, 700 '700A, 700B, 720, 730 740, 750, 760, 770 can be exaggerated and manufactured to be highly flexible and deformable, and may even be folded 152 201218416 stack, stretchable and possibly wearable, rather than rigid. For example, but not by way of limitation, 'exemplary devices 300, 300A, 300B, 300C, 300D, 700, 700A, 700B, 720, 730, 740, 750, 760, 770 may be flexible, indexable And wearable clothes or flexible lights or wallpaper lights. The exemplary device 300, 300A, 300B, 300C, 300D, 700, 700A, 700B, 720, 73 0, 740, 750, 760, 770 can be passed through a roller (such as a poster) or as a paper because of the flexibility. Fold it up and play it when you turn it back on. Also for example, the exemplary devices 3 〇〇, 3 〇〇 A, 3 0 〇 B, 300C, 300D, 700, 700A, 700B, 720, 730, 740, 750, 760, 770 have the flexibility Available in a variety of shapes and sizes, and can be configured for any of a variety of styles and other aesthetic goals. The exemplary devices 300, 300A, 300B, 300C, 300D, 700, 700A, 700B, 720, 730, 740, 75 0, 760, 770 also have significantly greater flexibility, fragility and brittleness than prior art devices. (for example) a typical big screen TV is much smaller. As shown above, a plurality of monopoles 1 〇 0 - 1 〇 〇 L can be configured (via material selection and corresponding doping) such as, but not limited to, optoelectronic (pv) diodes or LEDs. Figure 84 is a block diagram of a first exemplary embodiment 35, wherein a plurality of diodes 丨0 (M〇〇L are constructed to form LEDs of any type or color. System 35G includes illumination device 3嶋, fan c, 3 Interface, 3〇〇c, 300D, 700A (and any device with LEDs for LEDs 72〇, 73〇74〇, 750 760 770), interface circuit that can be drained to power supply 34〇 (such as wire or battery pack) 355 and the control of the presence of n 345 (with control logic circuit 360 and memory 36 as the case exists) (device 3〇〇a 153 201218416 is generally the same as device 3〇〇 in other respects, but has multiple constructions One of the LED poles 100-100L, and for the specific example of the device 3〇〇c, 3〇〇D, has two sides, and likewise, the device 7〇〇A is otherwise identical to the device 7〇〇 in other respects, but has a plurality of The diodes that make up the LEDs ^) cause one or more first conductors 310 and one or more second conductors 32 (or third conductors 312), such as via application of a respective voltage (eg, from a power source 34A) One or more of the multiple LEDs (diode loo-iooL) will be supplied to the 'completely crossed' when power is applied. Devices 3〇〇A, 3〇〇c, 3〇〇d, 300C, 300D '700A, 72〇, 73〇, 74〇, 75〇, 76〇, 77〇 (when conductors and insulators are each constructed as a single layer) ), or the corresponding phase of the first conductor 31〇 and the second conductor 32: the intersection (the overlap region), the intersections are oriented according to their orientation and configuration boundaries, such as pixels, sheets or columns/rows. By selectively energizing the first conductor 310 and the second conductor 32, the device 3A (and/or system 350) provides a pixel addressable dynamic display or illumination device or signage, etc. For example, a plurality The first conductors 31A may comprise respective complex columns, and the plurality of transmissive second (four) 32's comprise respective complex rows, which are defined by the intersection or overlap of the respective columns and corresponding rows. #复数第一Either or both of the conductors and the plurality of second conductors 32A can be constructed as illustrated in Figures 76-82' 87, 88, 91-98, 102, 103, for example, to make conductors 310, Powering up 320 will provide power to virtually all (or most) multiple (four) (diodes 10〇_1〇〇L), such as Illuminate the illumination device or static display H (such as a signage). The pixel count can be quite high, far above the typical high definition level. With continued reference to Figure 84, the settings are 300A, 30〇C, 3〇〇d, 3〇〇 C 3〇〇d, 154 201218416 700A, 720, 73 0, 740, 750, 760, 770 are interfaced to the power supply 340 via the interface circuit 355, and are also coupled to the controller 345, which may be DC A power source (such as a battery pack or photovoltaic cell) or an ac power source (such as home or building power). The interface circuit 355 can be embodied in a variety of ways, such as a full wave rectifier or a half wave rectifier, an impedance matching circuit, a capacitor that reduces DC chopping, a switching power supply coupled to an AC line, and the like, and can include, for example, but not limited to, various controls The energized components of the diode 1〇〇_1〇〇L (not separately stated). When the controller 345 is constructed, such as for an addressable illuminating display system, and/or a dynamic illuminating display system 35, the controller 345 can be known or soon to be known in electronic technology for controlling the poles. The power of the body 100-100L (via various plurality of first conductors 31 and a plurality of second conductive conductors 32), and typically includes control logic circuit %〇 (which may be a combinational logic circuit, a finite state machine, a processor) Etc) and memory W5. Other input/output (1/〇) circuits can also be used. When the controller 345 is not constructed, such as for various lighting systems 35, specific examples (which are typically not addressable and / are: non-dynamic lighting display systems 35, specific examples), the system (four) pass: coupled to an electrical switch or electronic switch (Not separately stated), the electrical switch or 7 sub-switch may comprise any suitable type of switch arrangement, such as for lighting to first turn on, off, and/or dim. Control logic circuitry 36, memory, etc., are discussed in more detail below after discussing Figures (10), 85, and 86. The face circuit 355 may be known in the art or may be known to process the voltage conversion capability including the impedance matching capability, the voltage rectification circuit, the low voltage U such as the higher voltage control bus, and the self-control logic. The signaling of circuit 360 turns various lines or connections on or off 155 201218416: a switching mechanism (such as a transistor) and/or a physical handle mechanism. Alternatively, interface circuit 355 can be adapted, for example, such as via hardwired Or rf signaling to receive and/or transmit signals from outside the system 350, such as to receive dynamic information to control the dynamic display g, or to control the brightness of the light output (dimmer), for example. The interface circuit 355A can also be a stand-alone device ( For example, a module) can be reused, for example, by means 76(), 77, which is configured to be snap-connected, swiveled to, latched to, or otherwise interfaced to the interface circuit 355A, such that the interface circuit 355A can Repeated use by multiple replacement devices 76〇, 77〇 over time. Example, as illustrated in Figure 1, an exemplary system embodiment 800 8 10 includes device 760 (if two poles are used) ! 〇〇 〇〇 建 construction or device 770 (if diode 100L is used) (in which multiple diodes 100-100L are LEDs), and interface circuit 355 to match the various bulbs Any of the Edison sockets. Continuing by way of example, and not limitation, interface circuit 355 can be sized and shaped to conform to one or more standardized helical configurations such as E12, E14, E26, and/or E27 screw base standards, such as a medium-sized screw seat ( E26) or candelabra screw base (E12), and/or other publications issued by, for example, the American National Standards Institute ("ANSI") and/or the Niuminating Engineering Society Various standards. In other exemplary embodiments, interface circuit 355 can be sized and shaped to conform to, for example, but not limited to, a standard fluorescent bulb socket or a dual plug socket, such as a GU-1 0 socket. Such exemplary system embodiments may also be considered equivalently as another type of device, particularly when having a form factor of 156 201218416, for insertion into, for example, but not limited to, a shallow circular socket or a fluorescent socket. For example, an LED-based "bulb" can be formed to have a design similar to a conventional incandescent light bulb, having a helical connector as part of the interface circuit 355 - such as ES, E27, coffee or Eu, which can be adapted to Any type of power outlet connection, such as (but not limited to) Ll, pL_2 pin, PL-4 pin, G9 guillotine capsule light (hal^gen to ^^^, G4 Nansu capsule light, GU1〇, GU5.3, card Port, small bayonet or any other connector known in the art. Devices 300A, 300C, 300D, 7A and first system 35 can be used to form a variety of lighting devices or other lighting products for a variety of purposes, Lamps and lamps, lamps, lighting fixtures, indoor and outdoor lighting, lamps configured with lampshade form factor, architectural lighting, work or work lighting, decorative or mood lighting, overhead lighting, security lighting, dimmable lighting , color lighting, theater and/or color variable lighting, display lighting, and illumination with any of the various decorative or imaginative forms mentioned herein. The first system 350 is also generally packaged. Various mechanical structures in any desired shape or form within system 35A are provided to provide sufficient physical support for devices 3A, 3A, C, 300D. [0086] Illustrative System 8A includes a device 76〇 and interface circuit 355A and exemplary system 810 includes device 770 and interface circuit 355A. "Face circuit 355A is configured to fit into a standard Edison light bulb spiral socket to couple to a standard AC power source (such as an AC bus) (not Separately stated. «Hai' I-face circuit 355A usually contains a rectifier circuit to convert the AC voltage to Dc 157 201218416 voltage, and may also include impedance matching circuits and various capacitors and / or resistors (and often includes the use of transistor construction) Switching) to reduce chopping of DC voltage, as is known in the art of LED lighting and LED power supply. As illustrated in Figures 1 and 2, device 760 includes a plurality of diodes Μ〇〇 (〇κ, While device 770 includes a plurality of diodes i 00L, the corresponding differences in device structure and materials are as discussed above and are discussed in more detail below. The figures are also used to illustrate exemplary devices (300, 300A, 30). Very thin and flexible form factor of 0B, 300C, 300D' 300C, 3 00D, 700, 700A, 700B, 720, 730, 740, 75 0, 760, 770), which has been twisted and folded into a fancy decorative form Figure 101 is a plan view showing the printed layout of the devices 760, 770. As illustrated, the devices 760, 770 are printed in a flat sheet having a very thin form factor. The plate is then cut in the region 716 to form a narrower Light bars 71 7 (seam coupled, as described above) electrodes (illustrated as carbon electrodes 3 2 2 a, 322B) are provided at each end. The crimping devices 76, 77 are then crimped and the ends 718 of the light strips 717 are brought together and overlap each other in a ring shape, leading to the electrodes 322A and 322B to provide power to the devices 76, 77, via the interface circuit 355A, and the light strips 717 There is a certain interval between each other, as illustrated in Figure 〇〇. Referring to Figure 102, device 760 is similar to other illustrated devices in which two additional layers, i.e., one or more third conductors 312 (which may also be deposited as a single layer using any of the transparent or opaque conductive inks and compounds discussed herein) And an additional dielectric layer between one or more third conductors 312 and/or a plurality of first conductors 310 (illustrated as 315A to distinguish it from 158 201218416, another dielectric layer, illustrated as 3i5B). One or more third conductors 312 are used to provide power (eg, voltage level) along the edge of the light strip 717 and to one or more second conductors 320 (which may be deposited as a transparent | electrical material as discussed above) Layers), and methods of reducing the total impedance, current level, and power consumption of device 760, effectively serve as parallel busbars along the length of each of the strips 71. Referring to Figure 103, device 770 is also similar to other illustrated devices in which three additional layers are added: (1) one or more third conductors 312 (which may also utilize any of the transparent or opaque conductive inks and compound depositions discussed herein). a single layer)·'(2) an additional dielectric layer between one or more third conductors 3 12 and one or more second conductors 32 12 (illustrated as 315A to distinguish it from another description 315b) A dielectric layer); and (3) one or more barrier layers 318 deposited between the dielectric layer 315b and the one or more second conductors 320 as described above. Using one or a second conductor 3 1 2 to provide power (eg, voltage level) along the edge of the light strip 71 7 and to connect to one or more first conductors 310, and also provide a reduction in the total impedance of the device 770, The method of current level and power consumption also effectively acts as a parallel busbar along the length of each of the strips 717. Any of a variety of light output levels may be provided by the devices 300A, 300C, 300D, 300C, 300D, 700A, 720, 730, 740, 750, 760, 770 'and will generally be based on the diode used i〇〇_1〇 The concentration of 〇L, the number of devices 300A, 300C, 300D, 300C, 300D, 700A, 720, 73 0, 740, 750, 760, 770 used in the first system 350, the selected or allowed power consumption and the applied voltage And / or current level changes. In an exemplary embodiment, devices 300A, 300C, 300D, 300C, 300D, 700A, 720, 730, 740, 750, 760, 770 may provide, for example, (but not 159 201218416) a range of about 25 lumens to 1 300 lumens. The light output inside depends on the power consumption, the concentration or density of the diode l〇〇_l〇〇L, and the current level of the diode i〇〇-i〇〇L (ie, the driving diode 100-100L) Difficulty), total impedance level, etc. 6 As shown above, 'plurality of diodes 1 〇〇 _ 1 0〇L can also be configured (via material selection and corresponding doping) to be photoelectric (PV) diodes body. Fig. 85 is a block diagram showing a specific example of the second exemplary system 375, wherein the diodes 1 〇 1 1 〇 建 建 constitute a photovoltaic (PV) diode. System 375 includes devices 300B, 700B (which are otherwise otherwise identical to device 300, 700 (or any other described device)' but have a plurality of diodes 100-1 00L that form a photovoltaic (PV) diode. And include either or both of an energy storage device 38 (such as a battery pack) or interface circuit 385 to transfer power or energy to another system (not separately illustrated), such as a powered device or electrical facility. (In other illustrative embodiments that do not include interface circuitry 358, other circuitry configurations may be used to provide energy or power to the energy usage device or system or energy distribution device or system.) Within system 375, One of the devices 3〇〇b, 7〇〇B or the plurality of first conductors 310 (or electrodes 322A) is spliced to form a first terminal (such as a negative or positive terminal), and the device 3〇〇Β, 7〇〇β One or more second conductors 320 (or electrodes 322 叙) are contiguously formed to form a second terminal (such as a respective positive or negative terminal), which in turn can be coupled to any of energy storage device 380 or interface circuit 385 or Both. When light, such as neon, is incident on the face 3, 7_ of the device, the light can be concentrated on - or a plurality of photovoltaic (PV) poles 100_100L, which then convert the incident precursor into an electron hole pair, such that The output voltage is generated on the first terminal and the second terminal and the output 160 201218416 * to either or both of the energy storage device 380 or the interface circuit 385. Note that when the first conductor 310 has the same as illustrated in FIG. In the case of a phase mismatch or comb structure, the first conductor 3 1 〇Β can be used to energize the second conductor 32 或 or, similarly, the voltage generated on the first conductors 31 310 and 310] 5 can be received. Figure 86 is a diagram for explaining the manufacturing apparatus 3〇〇, 3〇〇α, 3〇()B, 300C, 300D, 700, 700Α, 700Β, 720, 73〇, 74〇, 75〇, 76〇, 77〇 A flowchart of an exemplary method embodiment and provides a suitable overview. Beginning with an initial step 400, such as by printing a conductive ink or polymer or by vapor deposition, sputtering or coating a substrate (3〇5) with one or more metals, followed by curing or partially curing the conductive ink or polymer, or It is possible to remove the metal of the unnecessary position (depending on the implementation) to accumulate one or more first conductors (31〇) &gt; on the substrate (305) (step 405), and then also via Printing or coating a plurality of diodes 10 (M00L deposited) which have been typically suspended in a liquid, colloid or other compound or mixture (which may also include a plurality of inert particles 292) (eg, suspended in a diode ink) One or more first conductors (step 410) to form an ohmic contact between the plurality of diodes 1〇〇_1〇〇L and the one or more first conductors (which may also involve, for example, Limited to various chemical reactions, compression and/or heating. For device 7 specific examples, as discussed above, steps 405 and 410 are performed in reverse order. Subsequent deposition of a dielectric or insulating material, such as a dielectric ink, Multiple diodes 100-100L Or around, such as surrounding (and curing or heating) the perimeter of the diode (ie, curing or heating) (step 415), forming one or more insulators or dielectric layers 315. For device 76, specific examples are not separately Illustratively, sing 161 201218416 accumulates one or more second conductors 312 and dielectric layers; 31 5A (as steps 4 〇 5 and 415), and then proceeds to another step 4 〇 5 and step 4 丨〇. For device 770 In a specific example, a barrier layer 318 may also be deposited, which is also not separately described. Next, one or more second conductors 32〇, which may or may not be optically transmissive, are deposited on the plurality of diodes 1〇. 〇_1〇〇L and in contact with a plurality of diodes 100-100L, such as deposited on the dielectric layer 315 and surrounding the upper surface of the diode 100-100L and cured (or heated) (step 42〇) An ohmic contact is also formed between the first conductor (320) and the plurality of diodes 1〇〇_1〇〇L. In an illustrative embodiment, such as for an addressable display, a plurality of (transmissive) The second conductor 32 is oriented substantially perpendicular to the plurality of first conductors 31 For device 77, specific examples, dielectric layer 315A (as step 415) may be deposited, followed by deposition of one or more third conductors 312 (as step 405). As another alternative, Before or during step 42, a test can be performed in which the non-functional or otherwise defective diode (10)-1 sail is removed. For example, for a PV diode, a laser or other light source can be used for scanning. The surface (first side) of the partially completed device and when the region (or individual diodes 100-100L) does not provide the desired electrical response, may be removed using high intensity laser or other removal techniques. Also for example, for a powered LED, the surface can be scanned with a photosensor (first side), and when the region (or individual diode 100_100L) does not provide the desired light output and/or draws excess current (ie, when the current exceeds a predetermined amount), it can also be removed using high intensity laser or other removal techniques. Depending on the implementation, such as how to remove the non-functional or defective diode 1〇〇_i〇〇]L, the test step 162 201218416 can actually be performed in steps 425, 43g or discussed below. (3) After that. The stabilizing layer, 335, is then deposited on one or more second conductors 32 or (d) on other layers as illustrated by the various devices (steps), followed by deposition of an emissive layer 325 on the stabilizing layer (steps. In a specific embodiment, as described above, the layer 325 is typically deposited on the second side of the substrate 3 〇 八 八. It is also typically formed by printing, typically also by suspension, in a polymer, binder or other compound or mixture. A plurality of lenses (not separately illustrated) of lensing or lens particle ink or suspension are placed or deposited on the emissive layer, or a pre-formed lens sheet comprising a plurality of lenses suspended in the polymer is attached. Dividing the first side of the completed device (such as via a lamination process), then depositing a protective coating (and/or selected color) as appropriate (such as via printing) (step 355), and the method may end, returning to the step 44. Referring again to ffl 84, the control logic power % 36 〇 τ is any type of control: processor or control logic, and may be embodied as one or more processing benefits to perform the functionality discussed herein. The term processor is used herein, so processor 360 may include the use of a single integrated circuit ("lCj", or may include the use of a plurality of integrated circuits or other connections, arrangements or gatherings, such as controllers, micro Processor, digital signal processor ("DSp"), parallel processor, multi-core processor, custom integrated circuit, special application integrated circuit ("ASIC"), field programmable gate array ("FpGA"), self Adapt to computing ic, related memory (such as RAM, dram, and r〇m) and other 1C and components. Therefore, the term processor as used herein shall be understood to mean equivalently and include a single IC, or a custom integrated body. Circuit, ASIC, processor, microprocessor H, controller, FPGA, adaptive calculation (1) or some other implementation 163 201218416 The functions of the integrated system ^ ^ ^ ^ 4 group of the functions discussed below, and related Memory 'blocks such as micro-processing n memory or other RAM, dram, guilt, SRAM, MRAM, R〇M, FT to mouth LASH, EPROM or E2pr〇m. The device and its associated memory can be adapted or Configuration (via stylized, linked Interconnected or hardwired) to perform the method of the present invention, go to the specific example of the money 4 △ to perform selective like Xin Ding. The state is not accompanied by r 诼 疋, or such as for the sign and the body = rank / Row addressing. For example, the method can be programmed and stored as 7 sets of program instructions or other code (or equivalent configuration or other) in the processor and its associated memory 2 (and/or memory 365) and other equivalent components. The process is used for subsequent execution when the processor is operational (ie, powered and active). Equivalently, when control logic 360 can be fully or partially constructed to form an FpGA, custom integrated circuit, and/or ASIC, The FPGA, custom integrated circuit or 趟c can also be designed, configured and/or hardwired to perform the method of the present invention. For example: 'Control logic 4 〇 can be configured to form the processor, controller, microprocessor, DSP and / or ASIC configuration, collectively referred to as "controller" or "processor" - they are programmed, designed The method of the present invention is implemented, adapted, or configured to function in conjunction with the memory. Control logic circuit 360 and its associated memory can be configured (via stylized FpGA interconnection or hardwired) to control to a plurality of first conductors 3 1 and a plurality of second conductors 32 (and optionally One or more third conductors 3 12 ) are energized (applied voltage) to correspondingly control the information being displayed. For example, static or time-varying display information may be programmed and stored, configured, and/or hardwired in control logic circuitry 36 and its associated memory (and/or memory 365) and other equivalent components. A set of program instructions (or equivalent configuration 164 201218416 or other program). The memory 365 for subsequent execution of the control logic circuit 360, which may include a data repository (or database), may be embodied in a variety of forms, including any computer or other machine readable currently or in the future. Data storage media, memory devices, or other storage or communication devices for information storage or communication, including but not limited to memory volume circuits ("ICs") or memory portions of integrated circuits (such as processors) Resident memory inside), which can be volatile or non-volatile, removable or non-removable, including (not limited to), 2 AM SRAM, MRAM, FeRAM, ROM, EPROM or... M or any other form of memory device, such as a magnetic hard drive, CD player, disk or tape drive, hard drive, other machine readable storage or memory media such as going to ^ ^ ΠΤΛΏ Γ Λ Τ Τ γ λ 诺Such as a floppy disk, CDROM, CD-RW, digital versatile disc (DVD) or other optical memory, or any other analogy known or about to be known. In addition, the computer readable medium includes any communication medium.-V · ++ —t- »»_ —

2 Memory, storage medium or data storage device or circuit, depending on the software and data structure selected in accordance with the present invention, is programmed to perform the method of the present invention. Accordingly, the systems and methods of the present invention may be embodied as software that provides the above-described stylized or other instructions, such as a set of instructions and/or meta-data embodied in a computer-readable medium. In addition, metadata can be used to define various data structures for lookup tables or databases. The software may be in the form of, for example but not limited to, a source code or a target code. The source code can be further compiled into some form of instruction or object code (including combined language instructions or configuration information. The source code or metadata of the invention can be embodied in any type of code, such as C, C++, WC, USA, XML, Java, Brew, SQL, and its variants, f perform the functional (4) other types of stylized languages discussed in this article, including various hardware definitions or hardware modeling languages (eg %...call, VHDL, RTL) And the resulting database file (for example, GDS(1). Therefore, "construction", "program construction", "software structure" or "software" as used herein (4) means and refers to any kind of grammar or signature. Any stylized language that provides or can be interpreted to provide the specified related functionality or method (when present or loaded into a processor or computer (including, for example, processor 360) and executed). Software, metadata, or other source code and any resulting bits (object code, database, or lookup table) may be used in (4) tangible storage media (such as any computer or other machine, &amp; The J item #科存媒体) is embodied as a computer readable instruction, a data structure, an eight-character chess group or other materials, and the words for the memory 365, such as the floppy CDROM, CD_RW, as described above, DVD, magnetic hard drive, "type data storage device or media." 's 壬 Other 166 201218416 should be described outside the controller 345 'cooked this technology should be aware that there is a technology in this technology A number of equivalent configurations and types of control circuits are known to be within the scope of the present invention. In the description of the invention, the invention has been described with respect to specific specific examples, and is not intended to limit the invention. Examples of branched forms such as electronic components, electronic and structural connections, materials, and structures are provided to fully understand the specific examples of the present invention. Those skilled in the art should understand the present invention: Or other devices, systems are not; or multiple pieces of practice, etc. In other cases, no specific two;:; material, zero t material or # to avoid making the specific examples of the invention clear. The skilled person should further understand that the steps can be combined with other steps, or can be in different order = the method and the owner are in the mouth of the claimed invention. The limitation of (4). The reference to "a specific example", "7" or - specific "specific example" throughout the specification of the present invention means that the specific (four), structure or characteristic is actually described. The examples are not necessarily included in all specific examples, and examples in the specific examples. In addition, any specific specifics must be specifically-specifically-- or any other specific examples in any suitable combination of any configuration or characteristics, including Special:: No: 2 = ^^ levy. In addition, a variety of modifications can be made to: use, he is special in the basic scope of the invention and /it # ..... condition or material suitable ^ and ^ God . It should be understood that, in accordance with the teachings herein, 167 201218416, it is possible to make other changes and modifications to the specific examples of the invention that are described and illustrated by the φ &amp; "丄r", and that the changes and modifications of the invention will be regarded as Part of the spirit of the invention and the scope of the invention. - It should also be understood that the elements or elements depicted in Figure t can also be constructed in a different way than in the case of 'or even in some cases. It may be applicable according to the specific application. The overall formed component combination is also the specific example of the separation or combination of individual components that are unclear or difficult to distinguish. sk J In addition, the term "coupling" is used in this article ( Including its various forms, such as "coupled", means and includes any direct or indirect electrical, structural or magnetic light connection, connection or attachment, or the direct or indirect electrical, structural or magnetic interface, connection electrical correction The suitability or capability of a sub-attachment includes an integrally formed component and a component coupled via or via another component. As used herein for the purposes of the present invention, the term "[ED" and its plural forms shall be taken to include any other type of electroluminescent diode or other type capable of generating radiation in response to an electrical signal. A system based on carrier injection or bonding, including but not limited to various semiconductor or slave-based structures, luminescent polymers, organic coffee, etc. that respond to current or voltage luminescence, including the visible spectrum or other spectra ( For example, in the case of ultraviolet light or λ infrared ray, any band or any color or color temperature is also used herein for the purposes of the present invention, the term "photodiode (or ρν)) and its plural The form should be understood to include any photodiode or capable of responding to the infusion, such as the 月 号 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Or a bonded system, including but not limited to a variety of semiconductor or carbon-based structures that provide electrical signals in response to light generation, the light comprising a spectrum or other spectrum (such as 2 168 201218416) Any band of light within the ultraviolet or infrared light. The dimensions and values not disclosed herein are not to be construed as being strictly limited to the stated numerical values. In fact, &amp;# p仏, unless otherwise stated, Otherwise, each of the size sounds refers to the value and the function surrounding the value. For example, the size of 4 〇mm" means "about 4 〇 mm". [Embodiment] In the middle of the bow 1 &amp; + ^, jin has the literature in the relevant part of the article by reference; the reference to your Yuhong 7 literature should not be regarded as a recognition: this month Prior art. If any meaning or definition of the term of the invention is contradictory to any meaning or meaning of the same term in the document ', ^^-A 4 -3, ^ T, which is incorporated herein by reference, quasi. I don't know the meaning or definition of the term in the middle of the month: externally, unless otherwise specified, the signal of any signal in the pattern/circle is also limited. The components of the steps are considered to be separated or combined, or pre-intermediate and penetrated by ρ Μ β Λ Lf, which is not otherwise deducted. Otherwise, the term "or" as used in the scope of the patent is "or" or "connected" And the two special meanings of turning (π π π p or 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 'Otherwise, as described in this article and in the patent application scope accompanying the wearer:

Includes a number of references. Unless the context and the description of the text are in the context of the stipulations, the application patents included in this and the following articles include "in the middle" and "on". The description of the specific examples of the invention described above, including the description of [invention 169 201218416] or [the abstract of the invention] is not intended to be exhaustive or to limit the invention to the present invention. The precise form revealed. From the foregoing, it will be appreciated that various changes, modifications, and alterations may be made and may be made without departing from the spirit and scope of the novel inventive concept. Device limitations. Of course, all such modifications are intended to be covered by the scope of the patent application and are within the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 透视 is a perspective view illustrating an exemplary first diode embodiment. 2 is a plan view (or top view) illustrating an exemplary first diode embodiment. 3 is a cross-sectional view illustrating an exemplary first diode embodiment. Fig. 4 is a perspective view showing an example of an exemplary second diode. Fig. 5 is a plan view (or a plan view) showing an example of an exemplary second diode. Figure 6 is a perspective view illustrating an exemplary third diode embodiment. 7 is a plan view illustrating a specific example of an inferior third diode (or FIG. 8 is a perspective view illustrating a specific example of an inferior fourth diode. FIG. 9 is a specific example of an exemplary fourth diode. Plan view (or top view) Figure 1 is a cross-sectional view showing an example of an inferior second, third and/or fourth diode. 170 201218416 Figure 11 is an illustration of an exemplary fifth and sixth diode Figure 12 is a plan view (or top view) illustrating an exemplary fifth and sixth diode embodiment. Figure 13 is a cross-sectional view illustrating an exemplary fifth diode embodiment. A cross-sectional view illustrating an exemplary sixth diode embodiment is shown in Fig. 15. Fig. 15 is a perspective view illustrating an exemplary seventh diode embodiment. Fig. 16 is a plan view (or a plan view) illustrating an exemplary seventh diode embodiment. Figure 17 is a cross-sectional view illustrating an exemplary seventh diode embodiment. Figure 18 is a perspective view illustrating an exemplary eighth diode embodiment. Figure 19 is a diagram illustrating an exemplary eighth diode. Plan view (or top view) Figure 20 is a cross-sectional view illustrating an exemplary eighth diode embodiment. Figure 21 is a perspective view illustrating an exemplary twelfth polar body embodiment. Figure 22 is a cross-sectional view illustrating an exemplary twelfth polar body embodiment. Figure 23 is a perspective view illustrating an exemplary eleventh dipole embodiment. Figure 24 is a cross-sectional view illustrating an exemplary eleventh dipole embodiment. Figure 25 is a view showing a portion of a composite GaN heterostructure and The cross-sectional view of the metal layer is shown by the geometry and texture of the outer surface and/or the inner surface of the composite GaN heterostructure. Figure 26 is a wafer with an oxide layer such as hafnium oxide. Cross-sectional view. 171 201218416 Figure 27 is a cross-sectional view of a wafer having an oxide layer etched into a grid pattern. Figure 28 is a diagram of a wafer having an oxide layer etched into a grid pattern (or a top view) Figure 29 is a cross-sectional view of a wafer having a buffer layer (such as nitriding or tantalum nitride), a grid pattern of a hafnium oxide layer, and a gallium nitride (GaN) layer. Layer and composite GaN heterostructure (n+ type (four) layer A cross-sectional view of a substrate of a sub-well region and a P + -type GaN layer. Figure 31 is a cross-sectional view of a substrate having a buffer layer and a first mesa-etched composite GaN heterostructure. Figure 32 is a buffer layer and a second A cross-sectional view of a mesa-etched composite GaN heterostructure substrate. Figure 33 is a cross-sectional view of a substrate having a buffer layer, a mesa-etched composite GaN heterostructure, and an etched substrate for via connection. A cross-sectional view of a layered, mesa-etched composite GaN heterostructure, a metallization layer that forms an ohmic contact with a P+ type GaN layer, and a substrate that forms a metallization layer of via holes. Figure 35 is a composite with a buffer layer and a mesa button A cross-sectional view of a GaN heterostructure, a 'P GaN layer forming a metallization layer of ohmic contact, a metallization layer forming a via hole, and a substrate of a lateral button groove. 36 is a composite GaN heterostructure having a buffer layer, a mesa etching, a metallization layer forming an ohmic contact with a P + -type GaN layer, a metallization layer forming a via hole, a laterally engraved trench, and a purification layer (such as defeat) A cross-sectional view of the substrate of Fossil. 172 201218416 • Figure 37 is a composite GaN heterostructure with buffer layer, mesa etching, metallization layer forming ohmic contact with P+ GaN layer, metallization layer forming via holes, lateral etching trench, passivation layer and formation A cross-sectional view of a substrate of a metallization layer of a protruding or bump structure. Figure 38 is a cross-sectional view of a substrate having a composite GaN heterostructure (n+ type GaN layer, quantum well region, and p+ type GaN layer). Figure 39 is a cross-sectional view of a substrate having a third mesa-etched composite GaN heterostructure. Figure 40 is a cross-sectional view of a substrate having a mesa-etched composite GaN heterostructure, a etched substrate for via connections, and a laterally etched trench. Figure 41 is a cross-sectional view of a substrate having a mesa-etched composite 〇aN heterostructure, an ohmic contact with an n+-type GaN layer, and a metallization layer through the via and a laterally etched trench. 42 is a composite GaN heterostructure having mesa etching, an ohmic contact with an n+ type GaN layer, a metallization layer forming a through via, a metallization layer forming an ohmic contact with the p + type GaN layer, and a trench for lateral etching. A cross-sectional view of the substrate. 43 is a composite 〇aN heterostructure having a mesa button, an ohmic contact with an n+ type GaN layer, a metallization layer forming a through via, a metallization layer forming an ohmic contact with the p + type GaN layer, and lateral etching. A cross-sectional view of a substrate of a trench and a passivation layer such as tantalum nitride. 44 is a composite GaN heterostructure having a mesa button, an ohmic contact with an n+ type GaN layer, a metallization layer forming a through via, a metallization layer forming an ohmic contact with the p+ type GaN layer, and a side etching trench. , Passivation 173 201218416 Layer (such as tantalum nitride) and a cross-sectional view of a substrate forming a metallization layer of a protruding or bump structure. Figure 45 is a cross-sectional view of a substrate having a buffer layer, a composite GaN heterostructure (n+ type GaN layer, quantum well region, and P+ type GaN layer) and a metallization layer forming ohmic contact with the p+ type GaN layer. Figure 46 is a cross-sectional view of a substrate having a buffer layer, a fourth mesa-etched composite GaN heterostructure, and a metallization layer that forms an ohmic contact with the P+ type GaN layer. Figure 47 is a cross-sectional view of a substrate having a buffer layer, a mesa-etched composite GaN heterostructure, a metallization layer that forms an ohmic contact with the p + 歪 GaN layer, and a metallization layer that forms an ohmic contact with the n + -type GaN layer. Figure 48 is a cross-sectional view of a substrate having a buffer layer, a mesa-etched composite GaN heterostructure, a metallization layer that forms an ohmic contact with the n+ type GaN layer, and a laterally etched trench. 49 is a metallization layer having a buffer layer, a mesa-etched composite GaN heterostructure, a metallization layer forming a ohmic contact of a P i GaN layer, and a metallization layer forming an ohmic contact with the via layer and a metallization layer having a peripheral via hole formed therein A transverse cross-sectional view of the substrate of the laterally etched trench. 50 is a composite GaN heterostructure having a buffer layer, mesa etching, a metallization layer in which an ohmic contact is formed by a Pt GaN layer, a metallization layer forming an ohmic contact with the GaN layer, and a metal layer having a peripheral through-via; A cross-sectional view of a laterally etched trench, a passivation layer (such as tantalum nitride), and a substrate forming a metallization layer of a canine or bump structure. Figure 51 is a cross-sectional view of a substrate having a buffer layer, a fifth mesa-etched composite GaN heterojunction 174 201218416, and a metallization layer that forms an ohmic contact with the P + -type GaN layer. Figure 52 is a cross-sectional view of a substrate having a buffer layer, a mesa-etched composite GaN heterostructure, a metallization layer that forms an ohmic contact with the P+ type GaN layer, and an etched GaN heterostructure for the center via connection. 53 is a cross-section of a substrate having a buffer layer, a mesa-etched composite GaN heterostructure, a metallization layer forming an ohmic contact with the P + -type GaN layer, and a metallization layer forming a center via and forming an ohmic contact with the n + -type GaN layer. Sectional view. 54 is a composite 〇aN heterostructure having a buffer layer, a mesa etch, a metallization layer forming an ohmic contact with a P + -type GaN layer, a metallization layer forming a center via hole and forming an ohmic contact with the n + -type GaN layer, and a first A cross-sectional view of a substrate of a passivation layer such as tantalum nitride. 55 is a composite GaN heterostructure having a buffer layer, mesa etching, a metallization layer forming an ohmic contact with a P+ type GaN layer, a metallization layer forming a center via hole and forming an ohmic contact with the n + type GaN layer, and a first passivation A cross-sectional view of a layer, such as tantalum nitride, and a substrate forming a metallization layer of a protruding or bump structure. 56 is a composite GaN heterostructure having a buffer layer, mesa etching, a metallization layer forming an ohmic contact with a P + -type GaN layer, a metallization layer forming a center via hole and forming an ohmic contact with the n + -type GaN layer, and a first passivation A cross-sectional view of a layer (such as tantalum nitride), a metallization layer forming a protruding or bump structure, and a substrate of a lateral (or surrounding) etched trench. 57 is a metallization layer having a buffer layer and a mesa-etched composite GaN heterostructure, 175 201218416 forming an ohmic contact with a P + -type GaN layer, forming a center via hole and forming an ohmic contact with the n + -type GaN layer, a cross-sectional view of the substrate of a purification layer (such as a nitrogen cut), a metallization layer forming a protruding or bump structure, a laterally etched trench, and a second purification layer (such as a nitride nitride). Figure 58 is a cross-sectional view of a substrate having a buffer layer, a sixth mesa-etched composite GaN heteromorphic structure, and a metallization layer forming an ohmic contact with the P+ type GaN layer. Figure 59 is a cross-sectional view of a substrate having a buffer layer, a mesa-touched composite GaN heterostructure, a metallization layer that forms an ohmic contact with the P+ type GaN layer, and a metallization layer that forms an ohmic contact with the n+ type (10) layer. 60 is a composite GaN heterostructure having a buffer layer, mesa etching, a metallization layer forming an ohmic contact with a P + -type GaN layer, a metallization layer forming an ohmic contact with the 贞n+ type (four) layer, and a contact with the p + -type GaN layer. A cross-sectional view of a substrate of other metallization layers. 61 is a composite 〇aN heterostructure having a buffer layer, a mesa name, a metallization layer forming an ohmic contact with the P + -type GaN layer, a metallization layer forming an ohmic contact with the GaN layer, and a p + -type GaN layer. A cross-sectional view of a substrate forming another metallization layer in contact and a metallization layer forming a protruding or bump structure. 62 is a composite GaN heterostructure having a buffer layer, mesa etching, a metallization layer forming an ohmic contact with a P + -type GaN layer, a metallization layer forming an ohmic contact with the one-type layer, and a contact with the p + -type GaN layer; Cross-sectional views of other metallization layers, metallization layers forming a protruding or bump structure, and substrates of passivation layers (176 201218416 such as tantalum nitride). 63 is a composite GaN heterostructure having a buffer layer, a mesa etching, a metallization layer forming an ohmic contact with a P + -type GaN layer, a metallization layer forming an ohmic contact with the n + -type (four) layer, and a contact with the p + -type (four) layer; A cross-sectional view of the substrate of the second metallization layer, the metallization layer forming the protruding or bump structure, the purification layer (cutting), and the lateral (or surrounding) (four) trench is shown to be adhered to the solid state. Cui &gt; /丨_ Example of the horizontal wear surface. Example of an Abnormal Diode Wafer for a Temple Device Figure 65 is a cross-sectional view illustrating an example of adhesion to a holding dream. Example of Holding Device - Sexual Diode Wafer Specific Figure 66 is a cross-sectional view showing an example of adhesion to solid state. The exemplary twelfth polar body is shown in Fig. 67. Fig. 67 is a cross-sectional view showing the cross section of the back side gold: the specific example of the diode: the sticky (four) holding coffee. Exemplary Diodes of Holding Device FIG. 69 is a cross-sectional view illustrating an example of adhesion to solid. The example of the device is not the tenth-diode body. The figure shows the process for manufacturing _. An exemplary first embodiment of a body is shown in Fig. 71A and an exemplary second method is shown to illustrate the *IL diagram of Fig. 7 for fabricating a diode. _ 72 is divided into Figures 72A and _ &amp; B, to illustrate a flow chart for an exemplary third method embodiment for manufacturing a diode 177 201218416. Figure 73 is divided into Figures 73A and 73B for a flow chart illustrating an exemplary fourth method embodiment for fabricating a diode. Figure 74 is a cross-sectional view showing an exemplary polished and polished diode wafer embodiment adhered to a holding device suspended in a vessel containing an adhesive solvent. Figure 75 is a flow chart illustrating an exemplary embodiment of an exemplary method for making a diode suspension. Figure 76 is a perspective view of an exemplary first device embodiment. Figure 77 is a plan (or top) view of an exemplary first electrode structure illustrating a first conductive layer of an exemplary device embodiment. Figure 78 is a first cross-sectional view of an exemplary first device embodiment. Figure 79 is a second cross-sectional view of an exemplary first device embodiment. Figure 80 is a perspective view of an exemplary second device embodiment. Figure 81 is a first cross-sectional view of an exemplary second device embodiment. Figure 82 is a second cross-sectional view of an exemplary second device embodiment. Figure 83 is a second cross-sectional view of an exemplary diode coupled to a first conductor. Figure 84 is a block diagram of a first exemplary embodiment of the system. Figure 85 is a block diagram of a second exemplary embodiment of the system. Figure 86 is a flow diagram illustrating an exemplary method embodiment for fabricating a device. Figure 87 is a cross-sectional view of an exemplary third device embodiment illuminated from both sides. 178 201218416 • Figure 88 is a cross-sectional view of an exemplary fourth device embodiment illuminated from both sides. Figure 89 is a more detailed partial cross-sectional view of an exemplary first device embodiment. Figure 90 is a more detailed partial cross-sectional view of an exemplary second device embodiment. Figure 91 is a perspective view of an exemplary fifth device embodiment. Figure 92 is a cross-sectional view of an exemplary fifth device embodiment. Figure 93 is a perspective view of an exemplary sixth device embodiment. Figure 94 is a cross-sectional view of an exemplary sixth device embodiment. Figure 95 is a perspective view of an exemplary seventh device embodiment. Figure 96 is a cross-sectional view of an exemplary seventh device embodiment. Figure 97 is a perspective view of an exemplary eighth device embodiment. Figure 98 is a cross-sectional view showing an example of an eighth apparatus. Figure 99 is a perspective view showing an exemplary second electrode structure of the first conductive layer of the first embodiment of the exemplary device, and Figure 100 is a perspective view of a third and fourth exemplary system embodiment. Figure 101 is a plan view (or top view) of an exemplary ninth and tenth device embodiment. Figure 102 is a cross-sectional view showing an embodiment of an exemplary ninth device. Figure 103 is a cross-sectional view showing an embodiment of an exemplary tenth device. Figure 104 is a perspective view illustrating an exemplary first-surface geometry of an exemplary illuminating or light absorbing region. Figure 105 is a perspective view of an exemplary first 179 201218416 surface geometry illustrating an exemplary illuminating or light absorbing region. Figure 106 is a perspective view illustrating an exemplary third surface geometry of an exemplary illuminating or light absorbing region. Figure 107 is a perspective view illustrating an exemplary fourth surface geometry of an exemplary illuminating or light absorbing region. Figure 108 is a perspective view illustrating an exemplary fifth surface geometry of an exemplary illuminating or light absorbing region. Figure 09 is a photograph of a specific example of an energized exemplary device for illumination. Figure 10 is a scanning electron micrograph of an exemplary second diode embodiment. Figure 1 is a scanning electron micrograph of a plurality of exemplary second diode embodiments. [Main component symbol description 100: First diode 100A: Second - ^ pole body 100B • ΛΛτ - • Le 2 ~ 'Polar body 100C: Fourth - • Polar body 100D: Fifth body - 100E: Sixth Diode 100F: seventh, one pole 100G: eighth pole body 100H: ninth ~ 'pole body 100K: tenth pole body 180 201218416 100L: eleventh pole body 1001: twelfth pole Body 100J: thirteenth diode 102A: metal layer 102B: metal layer 103: reflective layer 105: substrate 105A: substrate 106: sapphire 107 · surface texture; 108: other layer 109: reflector II 0 : n+ type GaN Layer III: smooth surface 11 2 : outer surface texture 11 3 : stripe 114 : vertex 11 5 : p + -type GaN layer 116 : lens shape 117 : other geometric shape 11 8 : super-ring, honeycomb or waffle shape 119 : metal layer 120 : metal layer 120A : metal layer 181 201218416 120B : metal layer 1 2 1 · hexagonal side 122 : metal layer 124 : extended extension 125 : first terminal 126 : metal contact extension 127 : second Terminal 128: contact 129: metal layer 1 3 0 : via hole 1 3 1 : via structure 132: via structure 133 : via structure 134 : via structure 135 : dielectric layer 135A : passivation layer 136 : via structure 140 : light emitting region 145 : buffer layer 1 50 0 . wafer 150A : wafer 1 5 5 : trench 160 : holding Device 162: Laser Beam 182 201218416 • 165: Adhesive 170: Wafer Adhesive Solvent 175: Vessel 180: Back Side 185: Quantum Well Area 186: Relative Shallow Ditch 187: GaN Mesa Structure 187A: GaN Mesa Structure 187B: GaN Mesa structure 187C : GaN mesa structure 187D : GaN mesa structure 187E : GaN mesa structure 188 : trench 1 9 0 : yttria layer 1 9 1 : region 192 : region 193 : region

195: polycrystalline GaN 2 0 0 : initial step 205: releasing the diode step 2 11 : central via trench 2 1 5 : adding the diode in the first solvent to the binder step 220: Adding one or more second solvents Step 225: Adjusting any 183 201218416 weight percentage using an added third solvent (eg, deionized water) Step 2.30: Mixing a plurality of diodes in an air atmosphere at room temperature (25t:), First solvent, viscous agent, second solvent and any added third lysis sword 25-30 minutes Step 2 3 5: Return to step 240: Initial step 245· Growing or depositing an oxide layer on the semiconductor wafer Step 250 : stamping the oxide layer to form a grid or other pattern. Step 255: growing or depositing a buffer layer and illuminating or absorbing regions. Step 260. etching and illuminating or absorbing regions to form mesa structures for each of the diodes. Step 265: Etching the wafer to form a via trench in the substrate of each diode 270: depositing one or more metallization layers to form metal contacts and via steps of each diode

275 : 280 : 285 : a step of singulating or depositing a passivation layer between the one body to deposit or grow a trench on the metal contact step bump or protruding metal structure step 290: returning to step 292: inert particle 295 : film 300 : device 300A : device 184 201218416 . 300B : device 300C : device 300D : device 305 : substrate 305A : substrate 310 : first conductor 310A : conductor 310B : conductor 312 : conductor 3 1 5 : insulating dielectric layer 3 15A Dielectric layer 3 15B : Dielectric layer 3 1 8 : Barrier layer 320 : Conductor 3 22A : Carbon junction 3 22B : Carbon junction 325 : Light-emitting (or emission) layer 3 3 0 : Protective layer 33 5 : Stabilization Layer 340: Power Supply 345: Controller 3 5 0: Lighting System 3 5 5: Interface Circuit 3 5 5A: Interface Circuit 201218416 360: Control Logic Circuit 365: Memory 375: System 380: Energy Storage Device 385: Interface Circuit 400: Initial step 405. depositing one or more first conductors on the substrate to deposit a diode ink having a plurality of diodes on a first conductor, step 4 1 5 . Using dielectric ink, in plural Dielectric layer deposition on or around the diode step 42 Depositing one or more second conductors to contact a plurality of diodes step 425: depositing a stabilizing layer on one or more second conductors step 427. Depositing a protective coating on the first side of the stabilizing layer step 430 Depositing an emissive layer on the stabilizing layer or on the second side of the substrate. Step 43 5 - Deposition of the lensing and/or protective coating step 440: Returning step 5 0 0: starting step 5 〇 5. in sapphire or other Growing or depositing a GaN substrate on the wafer. Step 51. Growing or depositing a light-emitting or light-absorbing region. Step 5: 5: Etching the light-emitting or light-absorbing region to form one or more mesas of each of the diodes. Step 520. Passing GaN or other substrate to form one or more deep vias 186 201218416 and singulation trenching step 525: depositing seed layer 530: depositing metal to form deep vias step 5 3 5 . depositing metal contacts step 540 Depositing Current Distribution Metal Step 545: Growing or Deposition Passivation Layer Step Metal Structure Step 550: Depositing bumps or protrusions 555 on the metal contacts. Attaching the holding wafers Step 560: 565: Removing sapphire or other wafers Monomerization at each pole On the second side (back side) of the second polarity step deposit metal contacts step 5 70: return to step 600: initial step (9) to sapphire or other wafer bauxite 6 1 0. Growth or deposition of luminescent or light absorbing regions step 615 Depositing a metal contact step to form a GaN substrate step region to form one or more of each of the diodes 620: etching illuminating or light absorbing a mesa step W3. depositing a metal contact step or a plurality of deep via holes «Ο: money engraving Passing through the GaN or other substrate to form step 635. Depositing the metal to form the deep via hole. Step 640: Depositing or patterning the interconnecting step 645: Etching the singulation trench step 187 201218416 6 5 0: growing or depositing the purification layer step 655 : Depositing bumps or protruding metal structures on metal contacts Step 6 6 0: Attaching a holding wafer Step 665: Removing sapphire or other wafers to singulate a diode Step 670: In each of the diodes Depositing metal contacts on the two sides (back side) Step 6 7 5: Return to step 700: Apparatus 700: Device 700: Device 711: First area 712: Second area 713: Third area 7 1 4: Bus 716: Area 7 1 7 : Light bar 7 1 8 : End of light bar 7 20: device 730: device 740: device 750: device . 760: device / 770: device 800: system 188 201218416 8 1 0 : system 8 1 0 : system 189

Claims (1)

201218416 VII. Patent application scope: 1 · A composition comprising: a plurality of diodes; a first solvent; and a viscosity modifier. 2_ 如 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂 夂r propanol '2-propanol (isopropanol), "oxy-2-propanol", butanol (including l butanol, 2-butanol (isobutanol)), pentanol (including pentanol, 2_pentanol, 3-pentanol), octanol, n-octanol (including 1-octanol, 2-octanol, 3-octanol), tetrahydrofurfuryl alcohol, cyclohexanol, rosin alcohol; ether, such as a Ethyl ethyl ether, diethyl ether, ethyl propyl ether and polyether; esters, such as ethyl acetate 'dimethyl dimethyl adipate, propylene glycol monoterpene ether acetate, dinonyl glutarate, dimethyl succinate Esters, glycerol acetate; glycols such as ethylene glycol's - ethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, glycol ethers, glycol ether acetate; carbonates such as propyl carbonate; glycerin Classes such as glycerol; acetonitrile, tetrahydrofuran (THF), dimethyl decylamine (DMF), N-methylformamide (NMF), dimethyl sulfoxide (DMSO); and mixtures thereof. The composition of claim 1, wherein each of the plurality of diodes has a diameter between about 20 microns and 30 microns and a south degree between about 5 microns and 15 microns. 4. The composition of claim 1, wherein each of the plurality of diodes has a diameter between about 10 microns and 50 microns and a south degree between about 5 microns and 2 190 201218416 • 5. The composition of claim 1, wherein each of the plurality of diodes has a width and a length of between about 1 micron and 5 micron. And the degree of the range between about 5 micrometers and 25 micrometers. 6. The composition of the second aspect of the patent application, wherein the width and length of each of the plurality of poles are respectively It is between about 20 microns and 30 U meters and has a height between about 5 microns and 15 microns. The composition of the first aspect of the patent application, which further comprises: eight complex optically transparent and chemically inert particles having a size range of between about 10 micrometers and about 5 micrometers and about 〇 It is present in an amount of from 1% by weight to 25% by weight. The composition of claim 1 further comprising: eight or more substantially optically transparent and chemically inert particles having a size range of between about 10 microns and about 30 microns and between about 1% and 2% by weight · 5 wt% is present. 9. The composition of claim 1, wherein the first solvent comprises dipropylene glycol. 1 〇. The composition of claim i, wherein the first solvent comprises n-propanol. A composition according to the scope of the patent of the present invention, wherein the first solvent contains 1-octanol. • The composition of claim 1, wherein the first solvent comprises 丨-methoxy-2-propanol. 3. The composition of clause [i], wherein the first solvent comprises propylene glycol. 191 201218416 14 The composition of claim 1, wherein the first solvent is present in an amount of from about 0.3% by weight to about 5% by weight. The composition of claim 1, wherein the viscosity modifier comprises a methoxypropyl propyl cellulose resin or a hydroxypropyl methyl cellulose resin or a mixture thereof. 16. The composition of claim 1, wherein the plurality of diodes are light emitting diodes or photodiodes. The composition of claim 1, wherein the viscosity modifier is present in an amount of from about 0.3% by weight to about 5% by weight. 18. The composition of claim 1, wherein the viscosity modifier is present in an amount of from about 0.10% to about 3% by weight. 19. The composition of claim 1, wherein the viscosity modifier comprises at least one viscosity modifier selected from the group consisting of: clay, such as cinnabarite clay, garamite clay, organically modified clay Sugars and polysaccharides, such as guar gum (guar gUm), santillac gum; cellulose and modified cellulose, such as hydroxydecyl cellulose, decyl cellulose, ethyl cellulose, propyl methyl cellulose, Alkoxy cellulose, decyloxymethyl cellulose, methoxypropyl propyl cellulose, hydroxypropyl decyl cellulose, carboxymethyl cellulose, ethyl cellulose, ethyl ethyl cellulose , fiber (four), davidin ether, polyglucamine; polymers, such as acrylate and (meth) acrylate cool polymers and copolymers; glycols, such as ethylene glycol, diethylene glycol, propylene glycol , dipropylene glycol, glycol ether, glycol ether acetate; smoky sulphur dioxide, sulphur dioxide powder; modified urea; and mixtures thereof. 20. The composition of claim 3, further comprising a second solvent that is not the same solvent as the first solvent. 2 1. As claimed in the patent scope, the second solvent such as methyl 2-propanol (isopropanol), ^ 2-butanol (isobutanol), pentanol), octanol, n-octanol (including four Hydroquinol, cyclohexanol, rosin alcohol; ethyl propyl hydrazine and poly-call; vinegar, propylene glycol monoterpene ether acetate, glycerol diacetate; diol, such as ethylene dipropylene glycol, dipropylene glycol, diol Ether, Λ 5 + 锸, a composition of the wall 6 ±, wherein the first is at least one selected from the group consisting of Χ ^ &lt;Group of dissolution j: ^. Alcohol, ethanol, n-propanol (including κ diol dry 'oxy-2-propanol), butanol (including κ butanol (including 1-pentanol, 2 · Pentanol, 1-octanol, 2-octanol, 3-octanol), ether, such as methyl ethyl scale, ethyl acetate such as ethyl acetate, diammonium adipate, succinic acid Diterpenoid vinegar, alcohol, diethylene glycol, polyethylene glycol glycol ether acetate; carbonate, such as propyl carbonate; glycerin, such as glycerin; acetonitrile, tetrahydrofuran (THF), dimethylformamide (DMF), N-mercaptodecylamine (NMF), disulfoxide (DMSO); and mixtures thereof. 22. The composition of claim 20, wherein the second solvent is at least one binary 23. The composition of claim 20, wherein the second solvent comprises a solvating agent or a wetting solvent. 24_ The composition of claim 20, wherein the second paint comprises: Didecyl dicarboxylate; and dinonyl succinate; wherein the ratio of dimethyl glutarate to dinonyl succinate is about 2 to 1 (2:1). 193 201218416 2 5 · The composition of the second aspect of the patent is 'in which the second solvent is present in an amount of from about 0.1% by weight to about 1% by weight. 2 6. The composition of the second aspect of the patent application, wherein the second The solvent is present in an amount of from about 10% by weight to about 50% by weight. The composition of the second aspect of the invention, wherein the first solvent comprises n-propanol, isopropanol, dipropylene glycol, Diethylene glycol, propylene glycol, methoxy-2-propanol, 1-octanol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol, or a sth thereof and is from about 5% to 50% by weight The amount is present; wherein the viscosity modifier comprises a methoxypropylmethylcellulose resin or a hydroxypropylmethylcellulose resin or a mixture thereof, and is present in an amount of from about 10% by weight to about 5% by weight. Existing; wherein the second solvent comprises n-propanol, isopropanol, dipropylene glycol, ethylene glycol, propylene glycol, 丨_曱oxy-2-propanol, octanol, ethanol, tetrahydro sugar or ring Hexanol, or a mixture thereof, and is present in an amount of from about 0.3% by weight to about 50% by weight. 28. The composition of the second aspect of the patent application Wherein the first solvent comprises n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, 1-decyloxy-2-propanol, non-octanol, ethyl yeast, tetrahydrofurfuryl alcohol or cyclohexane An alcohol, or an 'exhibition' thereof, and is present in an amount of from about 5% by weight to 30% by weight per hydrazine; wherein the viscosity modifier comprises a methoxypropyl propyl cellulose resin or a hydroxypropyl fluorenyl cellulose resin or a mixture thereof, and is present in an amount of from about 1% by weight to about 3% by weight, wherein the second solvent comprises n-propanol, isopropanol, dipropylene glycol, monoethylene glycol, propylene glycol, 1-methoxy 2-propanol, 1-octanol 'ethanol' tetrakis-SS-TO 2% hexanol' or a mixture thereof' and weighed about 〇2, amount % to 8. 〇 weight 0/^ - and - , exist And wherein the remainder of the composition further comprises water. 194 201218416 2 9. The composition of the 28th item of the Shenqing patent scope includes: a plurality of optically transparent and chemically inert particles having a size ranging from about 1 〇 micron to about 50 Between the micrometers and in an amount of from about 〇.丨% by weight to 25 % by weight. The composition of the second aspect of the invention, wherein the first solvent comprises n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, or methoxy-2-propanol, Octanol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol, or its &gt;sand, and about 〇 眚 Α 曰 曰 / / / / / θ 丄 丄 丄 〇 〇 〇 〇 〇 〇 6.0 6.0 罝 罝 罝 罝 罝 罝 罝Wherein the viscosity modifier comprises methoxypropylmethan a soil f J 纤维素 cellulose resin or propyl methyl cellulose resin or a mixture thereof and is about 〇 · i 〇 wt% to i .5 The amount of the weight % is present; wherein the second solvent comprises n-propanol, #propanol, dipropylene glycol, ethylene glycol, propylene glycol, ^ &quot; T-milyl-2-propanol, 1-octyl alcohol, ethanol, Tetrazononol or cyclohexanol, or JL Wenzhafei, Kunming compound, and is present in an amount of about 40% by weight to 6〇 weight 0/〇. 3 1. For example, apply for a patent festival The composition of 30 items, which further covers a number of substantially windy ηα 围八" # λ dry transparent and chemically inert particles, the size of the range (five) is about 1 〇 micro Such as from about ς Λ wash, "Ο ο and in an amount of from about" 50 percent by weight, between memes. Lili. To 2.5 3 2 ·-- Preparation of a square bed of the composition of the second item of the patented dry circumference of the Shencheng Zhiluo #(五) %% patent dry circumference method> The method comprises: mixing a plurality of diodes with a first solvent; a first solvent enthalpy adjusting agent; a mixture of a plurality of diodes added to the viscosity to add a second solvent; and 195 201218416 solvent, the air atmosphere U combines the plurality: polar body, the second solvent and the The viscosity modifier is about 25 to 3 minutes. The method of item 32, further comprising: a diode. 3 3. If the patent application scope is to release the plurality of wafers from the wafer 3, as in the method of claiming the scope of the patent, the steps of releasing the plurality of diodes from the wafer. Pushing a Fengman 7 township further includes etching the back side of the wafer, grinding and polishing the back φ6 outer 曰 厍 surface of the wafer, or laser stripping from the back side of the wafer. 35. The composition of claim 2, wherein the first solvent is about 15 to 40% by weight of n-propanol, rosin or diethylethanol, tetrahydrofurfuryl alcohol or cyclohexanol, or a mixture; wherein the (4) comprises an alcohol, the modifier comprises about 5% by weight to 2.5% by weight of a methoxypropylmethylcellulose resin or a (tetra)methylcellulose resin or a mixture thereof; wherein the second solvent A non-polar resin solvent comprising from about G. 5 wt% to 1 Q wt%; and wherein the remainder of the composition further comprises water. 36. The composition of claim 2, wherein the first solvent comprises from about 17.5% to about 22.5% by weight of n-propanol, rosin or diethylene glycol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol. Or a mixture thereof; wherein the viscosity modifier comprises from about 1.5% to about 2.25% by weight of a methoxypropylmethylcellulose resin or a hydroxypropylmethylcellulose resin or a mixture thereof; wherein the second solvent Included from about 1% by weight to 6.0% by weight of at least one binary ®a, wherein the remainder of the s-thin composition further comprises water; and wherein the composition has a viscosity at 25 ° C substantially between 5, 〇〇〇cps to about 2〇, between cPs. 37. The composition of claim 20, wherein the first solvent 196 201218416 comprises from about 20% to about 4 tongues! 0/ 重里/0 of n-propanol, rosin or diethylene glycol, dimethoate, tetraditol to a net 4 hexyl alcohol, or a mixture thereof; wherein the viscosity modifier comprises about 1,25 weights / Nsh further / 〇 to 1.75 wt% of methoxypropyl methylcellulose resin or hydroxypropylmethyl I total secret Ti cellulose resin or a mixture thereof; wherein the second solvent comprises about 〇.丄%% to 6.0% by weight of at least one type of vinegar; wherein the composition of the basin is adjacent to VIII.,.. ^, the proud knife further comprises water; and wherein the composition is viscous at 25C The number of people is between about 1, 〇〇〇cps to about 5,000 cps. 3.8. The composition of claim 1, wherein the composition has a viscosity at about 25 C substantially between about 1 〇〇 cps and about 25,000 cps. 39. The composition of claim 1 wherein the viscosity of the composition at about 25 ° C is & person + person ^ see on the shell is "at about 1,000 Cps to about 1 〇, 〇 〇〇cps. The composition of the patent scope 帛1, wherein the composition has a viscosity of between about 10,000 cps and about 25, (8) 0. 41 · If the patent application scope The composition of claim 1, wherein each of the plurality of diodes comprises GaN and wherein each of the plurality of diodes has a substantially hexagonal, square, triangular shape, a rectangular shape, a leaf shape, a star shape or a super-ring shape. 42. The diode of claim 1, wherein the light-emitting or light-absorbing region of each of the plurality of diodes is selected from the group consisting of The surface texture of the group: a plurality of (four), a plurality of substantially curved sides of the ladder 197 201218416 shape, a plurality of parallel bars, violation of # solid &amp; T 1 public, and star pattern and their mixture. 43. If the scope of application The first 〗 〖Bei', and the object 'there are two of the two, and the body is in the side of the body The second side of the second side (back side) having the first metal end on the first side has a second metal terminal. 艿筮* The object of the shell, wherein the height of the first terminal and the first die are respectively r, Between about 1 micro and no less than 6 micrometers. 45. If the composition of the patent scope is ^, the composition of the plurality of diodes of each of the two poles of the helmet is _ Λ ^ straight for &quot; About 2 〇 between 30 micrometers and the face is between 5 micrometers and 15 millimeters and a half less, and each of the plurality of diodes is on the first side - There are a plurality of first metal terminals and a second metal on the first side of the plurality of first metal terminals: a junction of a metal terminal and a micron.乂 间隔 约 约 约 约 约 约 约 约 约 约 约 约 约 约 约 约 约 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 约 如 如 如Micron 芏 2 between the wood, and between the second to 8 microns. ^The south of the sub-atoms is between about i microns 47. As in the scope of the patent application ^ H t ^ ^ ^ „ members of the composition, of which one of the plurality of diodes and the ancient _ helmet into ^ Ma丨 between about 1 μm and 50 μm and having a twist of 5 μm to each of the diodes between the first and the second, and one of the plurality of diodes a plurality of first metal terminals and having a second gold on the first side, a bump of the second metal terminal and a micrometer of the plurality of first metal terminals. The composition of the first aspect of the invention, wherein the plurality of diodes of the plurality of polar bodies have at least one metal via structure in the second pole - on the side of the 5, 丨, &; main 乂 - a P + or n + type GaN layer and one side of the diode (back side) extends. The composition of the patent scope of the patent item 48, wherein The metal via structure includes a middle, a channel A, a via hole, a peripheral via hole or a surrounding via hole. The composition, wherein any of the plurality of diodes 0 has a size of less than about 30 micrometers. The composition of the first patent of the patent application, wherein the plurality of polar bodies are #1^ _ pole The ribs are hexagonal in shape. The diameters of the opposite faces are: about 20 μm i 3 μm and the height is about 5 μm to 15 μm. The composition of the first item of the patent scope of the patent application, Wherein the plurality of two sides of the limbs of the limbs have a height of less than about 10 micrometers. The composition of the first item of the patent scope of the Japanese patent, wherein the side of the plurality of diodes in the complex polar body The height is between about 25 micrometers and 6 micrometers. • The composition of claim i, wherein the sides of each of the plurality of diodes are substantially S-shaped and terminate in bending =. The composition of the item i of the patent scope, wherein the (four) degree adjustment h step comprises an adhesive viscosity modifier. 56. The composition of claim i, wherein the viscosity adjustment: in "or curing Surrounding substantially around each of the plurality of diodes Into a polymer or resin or mesh structure. Wherein the s-thin composition is substantially opaque when wet, and is substantially optically transparent when dried or cured, as in the composition of claim 1 of the patent application 199 201218416. Only the composition of claim ii, wherein the contact angle of the composition is greater than about 25 degrees or greater than about 4 degrees. 59. The composition of claim 1, wherein each of the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting of: shi xi, gamma gallium (GaAs), Gallium nitride (Ο-), Qap, InAlGaP, InA1GaP, AUnGaAs, ΐη & ΝΑδ and Αιΐη^^. The composition of claim 2, wherein each of the plurality of diodes comprises at least one organic semiconductor selected from the group consisting of: 7 Γ co-light polymers, poly (B-fast), Polypyridol), polycetophene, polystyrene polythiophene, poly(p-phenylene sulfide) 'poly(p-phenylene vinyl) (ppv) and ppv derivatives, poly(3-alkyl Thiophene), polyfluorene, polyfluorene, polycarbazole, polyglyc ring, polyaza, poly(di), polynaphthalene, aniline polyaniline derivative, polythiophene, polythiophene derivative, polypyrrole, polypyrrole Derivatives t and sesphene, polybenzophenanthene derivatives, poly-p-phenylene, poly-p-stack derivatives, polyethyl hexa-, poly-b-derivatives, polydiphenyl fast, polydiethyl bromide Derivatives, polyparaphenylene vinyl, polyparaphenylene vinyl derivatives, polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (PITN), heteroaryl groups are thiophene, furan or ° Biro's poly(arylene) vinyl (ParV), polyphenylene sulfide (pps), polyperinaphthalene (PPN), Phthalocyanine (PPHC), and derivatives, copolymers and mixtures thereof. 61. The composition of claim 1, wherein the composition has a relative evaporation rate of less than 1', wherein the evaporation rate is one relative to the latter. 62. Use of a composition as claimed in the scope of the patent application. The method comprises: a method of acid butyl, the printing of the composition on a substrate or printing onto a conductor coupled to the substrate. Soil 6 3. A composition comprising: a plurality of diodes; a first solvent; and a viscosity modifier; wherein the composition has a viscosity of from about i〇〇cps to about 25 at about 25 tons, 〇〇cps. 64. The composition of claim 63, wherein the first solvent comprises at least one solvent selected from the group consisting of: water; alcohols such as decyl alcohol, ethanol, n-propanol (including propanol, 2 _propanol (isopropyl alcohol), methoxy-2-propanol), butanol (including i•butanol, 2-butanol (isobutanol)), pentanol (including 1-nonanol, .2 -pentanol, 3-pentanol), octanol, n-octanol (including octanol, 2-octanol, 3-octanol), tetrahydrofurfuryl alcohol, cyclohexanol, rosin alcohol scales, such as methyl b Base shout, B _, ethyl propyl shout and shout 4, _ such as ethyl acetate, diammonium adipate, propylene glycol monomethyl ether acetic acid: glutaric acid two &quot; dimethyl succinate Glycerin, glycerol, diol, diethylene: alcohol, diethylene glycol, polyethylene glycol, propylene glycol, di-|] monool, glycol ether, glycol ether acetate; carbonate, such as carbonic acid丙酷. Beta, glycerol, such as glycerol; acetonitrile, tetrahydrofuran (THF), dimethyl methacrylate) Τ &amp; carbamazepine (DMF), 201 201218416 N-methylformamide (NMF), dimethyl stone (DMSO); and mixtures thereof. 65. The composition of claim 63, wherein each of the plurality of diodes has a diameter between about 10 microns and 50 microns and a height between about 5 microns and 25 Between microns. 66. The composition of claim 63, wherein each of the plurality of diodes has a width and a length of between about 10 microns and 5 microns and a height of between about 5 Between microns and 25 microns. 67. The composition of claim 63, wherein the step comprises: a plurality of substantially optically transparent and chemically inert particles having a size ranging between about 10 microns and about 5 microns and about 〇 It is present in an amount of from 1% by weight to 25% by weight. 68. The composition of claim 63, wherein the first solvent is present in an amount from about 0.3% to about 50% by weight. 69. The composition of claim 63, wherein the viscosity modifier comprises a methoxypropyl decyl cellulose resin or a hydroxypropyl methyl cellulose resin or a mixture thereof. 70. The composition of claim 63, wherein the viscosity modifier is from about 0.30% to about 5 parts by weight. /. The amount exists. 71. The composition of claim 63, wherein the viscosity modifier is about 0.10 by weight. /〇 to 3 wt% of the amount present. 72. The composition of claim 63, wherein the viscosity modifier comprises at least one viscosity modifier selected from the group consisting of clays such as lithium bentonite clay, garamite clay, organically modified clay Sugar and polysaccharides, such as guarsheng, Sanxianjiao; cellulose and modified fiber 202 201218416 vitamins, such as hydroxymethyl cellulose, methyl yin cellulose 1 oxygen ^ 1 cellulose, ethyl fiber , propylene A m cellulose 1-oxymethyl cellulose, methoxypropyl methyl cellulose, Zheng Liangfa from (tetra) methyl cellulose m fiber octyl, hydroxyethyl cellulose, ethyl hydroxyethyl A knowledge, alizarin c &amp;, avidin, cellulose ether fibrin, polyglucamine; polymer, such as ... Λ w 乙聚八物 and (3). 4 such as propyl fumarate and (methyl) Glycosyl acetoin and its copolymers; diols, alcohols, propylene-terpene alcohols, diethylene glycols, polyethylene-pre-propanols, glycol ethers, glycol ether acetates; Dioxo-cut, dioxy-cut powder; modified urea; and mixtures thereof. 73. If the composition of the patent application 坌 π ^ country 63, further comprises a second solvent which is not in the δ hai - solvent. 74. If the patent application of the formula QU π κ is at least one selected from the group consisting of two, wherein the solvent of the second solvent alcohol, ethanol, n-propyl group: water; alcohol, such as methoxy 2 K propanol, 2-propanol (isopropanol), ^lacyl-2-propanol), butanol (1 f alcohol (including K-pentanol, 2-butanol (isobutanol)), pentane 1 Sawuzhi, 3 · pentanol), octanol, n-octanol (Xiao Bi Bu Xin Zhi, 2 - octanol, 3_ + ^ including scales, such as indomethol, cyclohexanol, rosin alcohol; such as acetic acid鲳: hexane, diethyl ether, ethyl propyl ether and polyether; ester, dimethyl sulphate, butyl sulphate, propylene glycol monomethyl squamous acid brewing, glutarylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, two two - Ethyl ester; Carbonic acid &quot;Glycerin; Ethyl-3 such as carbonic acid propylene vinegar; Glycerin, such as 〇 guess, Si 虱. Fu ΤΗ (ΤΗ ... Ν _ methyl amide (NMF), two, A (DMF), 75. For example, the patent application (4) wind (DMS〇); and mixtures thereof. The composition of item 73, wherein the second solvent 203 201218416 is at least a dibasic ester 76. The composition of claim 73, wherein the second solvent is present in an amount of from about 0.1% by weight to 50% by weight. 77. The composition of claim 73, wherein the first solvent Containing n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, dioxetyl-2-propanol, octanol, ethanol, tetrahydrofurfuryl alcohol or cyclohexanol, or a mixture thereof, and It is present in an amount of from about 5% by weight to about 6% by weight; wherein the viscosity modifier comprises methoxypropylmethylcellulose resin or hydroxypropylmethylcellulose or a mixture thereof, and is about 〇·1 〇 Weight ° /. to 5 · 〇 weight y. The quantum in 'the second solvent contains n-propanol, isopropanol, dipropylene glycol, ethyl alcohol, propanol, 丨_曱oxy-2-propanol, a octyl alcohol, an ethanol, a tetrahydrofurfuryl alcohol or a cyclohexanol or a mixture thereof, and is present in an amount of from about 0.3% by weight to about 60% by weight. 78. The composition of claim 77, further comprising: plural An optically transparent and chemically inert particle having a size in the range of about 10 microns Between about 50 microns and in an amount of from about 0.1% by weight to about 25% by weight. 79. The composition of claim 63, wherein the composition has a viscosity at about 25 C. The upper portion is between about 1,000 cps and about 10, 〇〇〇cps. 80. The composition of claim 63, wherein the composition has a viscosity of substantially less than about 25 C. Between 10,000 cps and about 25,000 cps. 8 1. The composition of claim 63, wherein each of the plurality of 204 201218416 polar bodies has a 帛 on the first side i of the diode a metal terminal and a second metal terminal on the second side (back side) of the diode. 82. The composition of claim 81, wherein the height of the first terminal and the second terminal are each between about [micron] and 6 microns. 8 3 - The composition of claim 63, wherein each of the plurality of diodes has a diameter of between about 2 Å and 3 Å and a height of 5 Å to Between 15 microns, and each of the plurality of diodes has on the first side, a plurality of first metals $+ and a second metal terminal on the first side, The junction of the metal terminals and the contacts of the plurality of first metal terminals are spaced apart by a height of about 2 microns to 5 microns. »4: The height of each of the first metal terminals of claim 83 is between about 5 micrometers and 2 micrometers, and the height of the second metal terminal is between about 2 and 8 micrometers. . Double wood 85. The composition of claim 63 of the patent scope, wherein the plurality is two. Each of the poles has a diameter of between about 10 micrometers and 50 micrometers and a second dimension: between 5 micrometers and 25 micrometers, and each of the plurality of diodes has a plurality of sides on the right side of the plurality of diodes. a metal terminal having a first eight metal terminal on the first side, the contact of the second metal terminal and the plurality of cup terminals being spaced apart from each other by about 1 micron to 7 micron . In the polar body I:: The composition of the scope of claim 63, wherein any of the plurality of two 87-poles has a size of less than about 50 microns. The composition of claim 63, wherein the plurality of diodes of the plurality of 205 201218416 polar bodies are substantially hexagonal, having a diameter of about 20 micrometers to 3 micrometers, and the height is measured by face-to-face measurement. 88. As claimed in Article 63: :: 5 microns to 15 microns. The height of the sides of each of the diodes in the polar body is small, and the plural number is about two, about 10 and 90. As set forth in claim 63. The sides of the diodes in the polar body are substantially s, which makes the plurality of twos as in the 63rd of the patent application; The polar body is a light emitting diode or a photodiode. And a plurality of the plurality of diodes, wherein the plurality of diodes each have a size less than about 50 microns; any first solvent of each of the diodes; a second solvent of a first solvent and a viscosity modifier; wherein the composition is about 25,000 cps at about 2 generations.霄上,, spoon 50 cps to 92 · as in the scope of claim 91, at least - selected from the following composition, and the first solvent - methanol, acetyl, n-propanol (including κ Dry such as ψ m A 2 Λ ^ ., medlar, 2-propanol (isopropanol), j methoxy-2-propanyl), butanol (including ^ J 1-pentanol (including 1- Pentanol, 2-pentanol di-, 2-butanol (isobutanol), including 1-octanol, 2-octanol, 3-octanol (Package 4 Putian A, cyclohexanol, cyclohexanol, Rosin alcohol. Ethers such as methyl ethyl ether, diethyl ether, lolol, G propyl propyl ether and polyether; such as ethyl acetate, dimethyl oxalate, known, internal glycol mono-f-ether acetate , 戍二206 201218416 @夂一 methyl ester, succinic acid diterpene _, acetic acid; 醢, -7_士俞' blocking such as ethylene di-alcohol: plant drunk, polyethylene glycol, propylene glycol, dipropylene glycol, two Alcohol oxime, = acetic acid vinegar; carbonated vinegar 'such as propylene carbonate; glycerin, such as ... acetonitrile, tetrahydrofuran (THF), dimethyl decylamine (d N-methylformamide (NMF) , dimethyl (four) (congenital); and its mixed substances. The composition of claim 91, wherein each of the plurality of diodes has a diameter of between about 1 Å and a micron and a height of between about 5 and 25 microns. 9. The composition of claim 9 wherein each of the plurality of diodes has a width and a length of between about 1 micron and a micron and a height between Between about 5 microns and 25 microns. 95. The composition of claim 91, further comprising: a plurality of substantially optically transparent and chemically inert particles having a size in the range of about 10 microns and about Between 50 microns and in an amount of from about 5% by weight to about 5% by weight. The composition of the ninth aspect of the invention, wherein the first solvent is from about 0.3% to about 60% by weight. The amount is present and the second solvent is present in an amount of from about 8% by weight to about 60% by weight. 97. The composition of claim 91, wherein the viscosity modifier comprises methoxypropyl fluorenyl fiber Or resin or hydroxypropyl fluorenyl cellulose resin or a mixture thereof' The modifier is present in an amount of from about 10% by weight to about 5% by weight. 98. The composition of claim 91, wherein the viscosity modifier comprises less than one viscosity selected from the group consisting of Regulator: Viscosity 207 201218416 Soil, such as bell-type bentonite clay, 胗·y (gaunnte) clay, organically modified tea occupied soil, listening to vinegar, "Shishi" "4 such as guar gum, Sanxianjiao; cellulose And modified cellulose 'such as hydroxymethyl cellulose, ' · cellulose, ethyl cellulose, propyl methoxy cellulose, methoxy methyl cellulose, helium propyl methyl cellulose,甲其甲其秘, &amp; main-endo-methyl cellulose, carboxy-f-cell cellulose, ethyl cellulose, ethyl hydroxy 'ethyl cellulose, cellulose ether, cellulose ether, polyglucosamine ; polymer 铋, ^, substances such as acrylate and (meth) acrylate polymers and copolymers; diol, _ such as ethyl alcohol, diethylene glycol, polyethylene glycol, propylene glycol, two 13⁄4 -; S contains - know, glycol ether, glycol ether acetate; smoked silica dioxide, Xi stone oxide powder; modified urea; and mixtures thereof. 99. The composition of claim 91, wherein the second solvent is at least one solvent selected from the group consisting of: water; 酉, such as methanol, ethanol, n-propanol (sentence _, bar)栝^-propanyl, 2-propanol (isopropanol), buckling&gt;-(including 1-butanol, 2-butanol (isobutanol)), 知zhi (including 1-pentanol, 9#) ;«·*·, ^ 2_pentanol, 3-pentanol), octanol, n-octanol (including octanol 2 octanol, 3-octanol), tetrahydrofurfuryl alcohol, cyclohexanol, rosin alcohol; , such as methyl ethyl sulphate, B _, ethyl propyl bond and poly ..., such as ethyl acetate, adipic acid dimethyl s, propylene glycol monomethyl ether acetate _, pentane &amp; Methyl ester, glycerin glycerol, diol, such as ethylene glycol, diethylene glycol, blister 7 Ρ A c*-alcohol, propylene glycol, dipropylene glycol, diol scale, alcohol 虼 S 欠 曰, carbonate , such as propyl carbonate; glycerol, such as Gan ' from 'Bie tetrahydrogen cough (THF), trimethyl hydrazine (DMF), N-methyl decylamine (Nmf), dimethyl sulphite Wind (); and its mixture. 100. The composition of the 91st item, wherein the first solution 208 201218416 'agent comprises n-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, ^methoxy-2-propanol, octanol, ethanol , tetrahydrofurfuryl alcohol or cyclohexanol, or a mixture thereof' and is present in an amount of from about 5% by weight to about 60% by weight; wherein the viscosity modifier comprises methoxypropylmethylcellulose resin or hydroxypropyl hydrazine a cellulose resin or a mixture thereof, and is present in an amount of from about 1% by weight to about 5% by weight, wherein the second solvent comprises n-propanol, isopropanol, dipropylene glycol, monoethylene glycol, propylene glycol, or曱oxy-2-propanol, octyl octanol, ethanol, tetrahydro L alcohol or ethoxyhexanol 'or a mixture thereof' and is present in an amount of from about 3% by weight to about 6% by weight. The composition of claim 91, wherein a height of a side of each of the plurality of aa is less than about 1 〇 micrometer, substantially S-shaped and ends at a bending point. 1 02. Patent application The composition of claim 91, wherein the plurality of monopoles are light emitting diodes or photodiodes. 1 03 · A composition comprising: a plurality of diodes having any size less than about 5 μm; and a viscosity modifier such that the composition has a viscosity of about 25. The underlying viscosity is substantially between 100 cps to about 20,000 cps. 1 0 4. A composition comprising: a plurality of diodes; a first solvent selected from the group consisting of: n-propanol 'isopropanol, -propylene glycol, two Ethylene glycol, propylene glycol, diterpeneoxy-2-propanol, "octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol and mixtures thereof; selected from the group consisting of viscosity modifiers: methoxypropyl A Base 209 201218416, propylene glycol cellulose resin, hydroxypropyl fluorenyl cellulose resin and mixtures thereof; and a second solvent different from the first solvent, the second solvent is selected from the group consisting of: Alcohol, isopropanol, dipropylene glycol, diethylene glycol diol, 1-decyloxy-2-propanol, 1-octanol, ethanol, tetrahydrofurfuryl alcohol, rings and mixtures thereof. Eight, schema · (such as the next page) 210