TW201203317A - Controlled vaporization system and method for surface priming in semiconductor manufacturing - Google Patents

Abstract

A method and corresponding system for a contactor used to introduce a chemical solvent to a gas stream are described. The chemical solvent is directed onto a first side of the contactor and the gas stream is directed onto a second side of the contactor. The first side of the contactor is chemical solvent permeable. The chemical solvent diffuses through the first side of the contactor onto the second side and creates a mixture with the gas stream. The mixture may be used to prime substrate surfaces in photolithography applications to enhance transfer of patterns to substrate surfaces. The flow, concentration, and temperature of the gas stream and adhesion parameter may be controlled.

Description

201203317 VI. INSTRUCTIONS: This patent claims the right to apply for US Provisional Application ''No. 1/349,897' in May 2012. The manner in which all of the above teachings are taught is incorporated herein. [Technical field to which the invention pertains], "A method for introducing a chemical solvent into a contactor of a gas stream and a corresponding system. The chemical solvent is directed to the first side of the contactor to direct the gas flow to the contactor On the two sides, the first side of the contactor is permeable. The chemical solvent passes through the contactor to the second side and produces a mixture with the gas stream. The mixture can be used to enhance the surface of the base substrate in the lithography application. Pattern-to-Substrate Surface Transfer [Prior Art] The background of the present invention, such as photomicro-optical lithography, relates to the use of optical exposure to transfer a pattern (eg, a geometric pattern) from a photomask to a photoresist coated with a photoresist. On Shi Xiyuan. The adhesion of the photoresist to the surface of the wafer has a direct impact on the pattern transfer and the success of the execution in the I! program. To enhance the photoresist, chemical solvents can be used (for example, hexamethyl diacetone ( Hmds)) Coating the surface of the wafer before applying the photoresist. The liquid HMDS can be directly spin-coated onto the Shi Xi wafer for rounding. Although this method is effective and relatively simple, it is typically Eve The gas 'is therefore the wafers can be divided during the liquid s coating. The entrained moisture can react with the liquid HMDS and inhibit the adhesion to the wafer surface by 201203317. The HMDS vapor coating can be used to make the liquid in the liquid. The presence of the hmds is minimized. HMDS vapor is often applied to the surface of the wafer in the closed chamber. A tank of liquid HMDS can be foamed by using a carrier gas (e.g., typically E (i.e., NO) (Using a bubbler) and obtaining a mixture of helium and helium (10) vapor to produce HMDS vapor. This mixture of N2 and HMDS gas is typically transferred to the point of use via a long tube. However, the use of a bubbler produces HMDS vapor. Inefficiency' and causes various shortcomings. For example, the foaming setting command has a larger footprint and does not provide efficient control of the hmds vapor concentration. Furthermore, the bubbler settings are typically located away from the point of use, thus requiring Long pipe transfer from the HMDS vapor mixture to the point of use. During this long transport, the mixture of & HMDS vapor is more likely to be exposed to the opportunity to increase the concentration of HMDS vapors that cause defects on the wafer. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A mixture for coating a surface of a substrate with a chemical solvent prior to optical exposure to transfer the pattern to the surface of the substrate. This example embodiment uses a chemical solvent permeable synthetic membrane contactor. The system includes a source of chemical solvent. A source of chemical solvent is used to supply a chemical solvent to a first side of the membrane contactor. The chemical solvent diffuses through the first side of the membrane contactor to a second side of one of the membrane contactors 201203317. The system further Included as a gas supply source for supplying a gas stream to the second side of the membrane contactor and to the diffused chemical solvent, the gas stream and the diffused chemical solvent are opened to form a gas a vapor mixture of the surface of the substrate. The system uses a photolithographic light source for applying an optical exposure that transfers a pattern to the surface of the substrate. The mixture covering the surface of the substrate enhances the transfer of the pattern to the surface of the substrate. Another example of the invention is directed to a photolithography system that includes an evaporative contactor and a photolithographic source. The evaporative contactor includes a port for inputting a chemical solvent into one of the first sides of the contactor. The chemical solvent diffuses through the first side to a second side of the contactor. The evaporative contactor also includes an input π for inputting a gas stream into the second side of the contactor. The job stream produces a mixture with one of the diffusing gases. The evaporative contactor further includes a U-like imitation for outputting the mixture from the second side of the contactor to a surface σ on a substrate surface. The photolithographic light source is optically exposed to the surface of the substrate to expose the mixture to enhance the transfer of the pattern to the surface of the substrate. Still another embodiment of the present invention relates to a photolithography system for enhancing the transfer of a substrate surface. The "including-evaporating the evaporative contactor includes an inlet for inputting a chemical solvent into the first side of the enthalpy state - the contact is for inputting a gas stream into the second side of the hook The inlet and the gas are diffused to the second side of the contact benefit via the first side, and the force $野_ /, , -β .. is formed on the third side of the 3H A. No. On the first side of the contactor, an outlet exits the mixture wheel 201203317 onto the surface of the substrate. The system also includes a photolithography source, and the illumination source application The pattern is transferred to an optically exposed mixture of the surface of the substrate to enhance the transfer of the pattern to the surface of the substrate. &quot; Some specific examples of the invention relate to a chemical evaporation system that can be used Changing—the surface energy of the substrate. The system includes a chemical solvent permeable synthetic film, a chemical solvent source, a gas supply source, and a photolithography source. The chemical solvent source supplies a chemical solvent to the film. - the inlet on the side. the chemical solvent passes through the membrane The first side diffuses to a first side of the membrane. The far gas supply source supplies a gas stream to an inlet on the second side of the membrane and to the diffused chemical solvent. The gas stream and the diffusion chemical solvent Forming a mixture transferred to the surface of the substrate via an outlet on the second side of the film. The photolithographic light source applies an optical exposure that transfers the pattern to the surface of the substrate. The mixture enhances the transfer of the pattern to the surface of the substrate. The membrane contactor can be a microporous hollow fiber. The chemical solvent can be a liquid or vapor hexamethylene diazane or isopropanol (IpA). The gas stream can be a mouse gas stream. A chemical solvent controller can be used to control the flow and pressure of the chemical solvent supply to the first side of the membrane. A chemical solvent temperature controller can be used to control the temperature of the chemical solvent supply. A chemical solvent concentration controller is used to control the concentration of the chemical solvent. A gas purifier system can be coupled to the gas supply to purify the supplied gas stream. A gas flow control can be used. Controlling the flow and pressure of the gas supply to the second side of the membrane. A gas flow temperature control 201203317 can be used to control the temperature of one of the gas streams. Example embodiments provide a smaller footprint by utilizing the composition Process control that minimizes process defects and contamination. Minimizes academic waste and eliminates unnecessary and low cost of ownership. In addition, the use of miniaturization and improvement is better for better process [Embodiment] Detailed description of the present invention The foregoing is a more particular description of the preferred embodiments of the embodiments of the invention The specific examples are illustrative of the invention. The invention is not limited to the particular molecules, compositions, or methods described, as such may vary. The terms used in the description are for the purpose of describing particular versions or specific examples, and are not intended to limit the scope of the invention, which is limited only by the scope of the appended claims. DETAILED DESCRIPTION OF THE INVENTION Example embodiments of the present invention provide both systems and methods for adding a chemical solvent to a gas and using a mixture of a gas and a chemical solvent to assist in depositing a photolithographic pattern onto a substrate coated with a photoresist. Although this specific example is directed to the use of a mixture in semiconductor fabrication such as photolithography, the use is not limited to such systems. Specific examples of certain embodiments of the present invention are, for example, chemical vaporization systems for use in coating a substrate prior to photolithographic processing of a surface. In some specific examples, the surface energy of the substrate can be changed using &quot;,. An evaporation system is used to add a vapor (e.g., chemical chemistry, &apos; valley h) to the gas stream to form a gas mixture. The vapor is vaporized in the gas 201203317 bis, and the mixture is used to reduce or eliminate the contaminated optical component in the lithography system to maintain the coating on the substrate: the property 'promotes the photoresist during processing Adhesion (for example, adhesion: 2 enhances the transfer of light to the surface of the substrate by photolithography. The path in the photolithography is used to remove portions of the substrate and transfer the pattern from the photomask to the salt light Chemicals (ie, 'resistances') to the substrate. The pattern is then engraved into the substrate under photoresist using a certain chemical. The specific examples of the present invention are related to the chemical evaporation of the transfer. The system includes chemical dissolution, film formation, supply of a chemical solvent to a source of a solvent source on a first side of the crucible, and supply of a gas stream to an infeed source on a second side of the membrane. The first side diffuses to the second side of the membrane and the vapor mixture of the gas stream. The gas is transferred to the surface of the substrate via an outlet on the second side of the membrane. The system also includes a photolithographic source that applies the pattern Optical exposure to the surface of the substrate On the surface of the substrate: transfer of the mixture enhancement pattern to the surface of the substrate. As used herein, the term "chemical solvent" or "chemical solvent in the form of (gas). Chemical solvent in the form of vapor = set through the film, so that The cavity side of the membrane is in the form of a gas (gas). The mu gas membrane is a chemical solvent permeable synthetic membrane (for example, a tantalum contactor) comprising a first side (ie, a shell side) and a second side (also The chemical solvent is permeable, and the membrane allows the chemical to be known to enter the second side of the membrane. In some embodiments, the dimorphic side-side diffusion and the first side of the membrane includes the 201203317 source to the chemical solvent source to receive the chemical solvent The supply inlet allows the chemical solvent supply to diffuse to the second side of the membrane. The second side of the membrane includes an inlet and an outlet. The port can be connected to a gas supply to receive the gas stream. The gas stream forms a mixture with the diffusion chemistry, the agent, The mixture is transferred out of the second side of the membrane via the outlet. In some embodiments, the membrane contactor can include a housing and one or more microporous hollow fiber membranes. In this particular example, the housing has utility The inlet and the outlet of the vapor or liquid (eg, chemical solvent vapor) and the corresponding outlet on the first side of the hollow fiber further comprise an inlet for the input gas stream and the output gas stream or gas mixture and in the hollow fiber Corresponding outlets on the two sides. The microporous hollow fiber membrane should contribute less than one part per billion of contaminants that degrade the optical properties of the optical components in the lithographic projection system. The membrane can be cleaned or treated to reduce or shift In addition to such contaminants, any chemical solvent suitable for use in semiconductor fabrication, such as in photolithographic applications, can be used in the present invention. In a preferred embodiment, the chemical solvent can be a lower surface tension liquid. For example, a surfactant for producing a lower surface tension on the surface to which it is applied. In a particular embodiment, the chemical solvent may be a liquid or gas six f-based two second gas two (HMDS). HMDS is used as a preferred chemical solvent because it is often used as an adhesion promoter in photolithography for coating a substrate to enhance the bonding of the surface of the optical substrate. Other examples of chemical solvents include ^methyl-2-deca: _(song), isopropanol (IPA), |L-acid, cyclohexanol, propylene glycol, early U{(PGMEA), C: alcohol monoterpene Shout (10) (4) or C. Suitably suitable as a carrier gas for chemical solvent vapors in photolithographic applications. Any gas stream may be used in accordance with the present invention. In a preferred embodiment, the gas stream may be nitrogen (n2) gas. 5 w The body of the milk can be used, for example, to purify and/or to be suitable for its intended use, by purifying and/or inferior to certain photolithography applications. Sources can be included with -=Γ! Or pre-processing. The inlet and the purge gas of the evaporator are in fluid communication with the second regeneration purifier. ,-servant. . Purification of the chaotic body by the purification of the self-purifier. / Yin Huashang can independently enter σ铉A &amp; from the source of the purifier to remove the 3 dyes to form a purge gas. The present invention uses the use of a point contactor: it is applied to the wafer in the process of photolithography, thereby eliminating the pair for:, body-chemical solvent vapor mixing to the sound surface... "Gas_Chemistry The solvent mixture is transferred to -fb ^ ^ ^ ^ for additional use due to the use of tantalum contactors

Li's second gas supplies a chemical solvent, so it provides a smaller footprint by making the chemically necessary components, and uses point applications to minimize process defects and contamination' and improves process stability. Process control. One of the present inventions has a 丨 π πη to U... a chemical evaporation method for enhancing the transfer of a pattern surface. These examples have = for supplying a chemical solvent to the inlet on the first side of the synthetic membrane and for supplying the rolling stream to the second side of the membrane, Λ I, left. The chemical solvent diffuses through the first side of the membrane to the second of the membrane to form a mixture. The gas mixture is transferred to the surface of the substrate via the outlet on the first side of the membrane on the second side of the membrane. This example embodiment application exposes the optical exposure of the image. The transfer of the mixture enhancement pattern to the substrate surface is carried out on the surface of the substrate. Earthen clothing 11 201203317 Optical exposure transfers the pattern to the surface of the substrate. The gas mixture covering the substrate serves to reduce or eliminate contaminating optical components in the lithographic projection system, maintain chemical activity of the coating on the substrate, and enhance photolithographic transfer of the pattern to the substrate surface. Some example embodiments of the present invention relate to a photolithography system for enhancing transfer of a pattern to a substrate surface. Examples of such examples include an evaporation contactor and a photolithography source. The evaporative contactor includes an inlet for introducing a chemical sorbent into the first side of the contactor and for inputting a gas flow thereto. The entrance in the first side of the mysterious contactor. The chemical solvent diffuses to the first side via the first side of the contactor and forms a mixture with the gas stream. An outlet on the second side of the contactor outputs the mixture from the second side of the contactor to the surface of the substrate. The application of the pattern to the substrate surface is optically exposed. The mixture enhances the transfer of the pattern to the surface of the substrate. The term "membrane contactor" is used herein to generally refer to a device having a hollow fiber membrane suitable for use as an evaporator for a chemical solvent. In the present invention, a membrane contactor is used as an evaporator which adds steam from a chemical solvent to the purge gas flow with less or less than about one part per billion of added contaminants. Membrane contactors that have been used for humidification have been described in U.S. Patent Nos. 6,149,817, 6,235,641, 6, 3, 9, 55, No. M, 2, 8 U, 6, 474, 628, MiM 4i, Nos. 6,669,177, 6,702,941, 6,842,998, and the application of the PCT application to the pct/US2004/023490 and pCT/US2〇〇7/〇〇79〇i are incorporated herein by reference. A similar configuration can be used in this application. The term "transfer pattern" as used herein refers to a patterned cross section that imparts an incoming image to a pattern that is to be produced in a target portion of a substrate. The term "light valve" can also be used in this context. The pattern will correspond to a particular functional layer in the device (such as an integrated circuit or other device (see below) that is being generated in the target portion. An example of this patterned device is a mask. The concept of a mask is well known in lithography and includes mask types such as binary, alternating phase shift and attenuated phase shifting, as well as various hybrid mask types. The placement of the mask in the light beam causes selective transmission of radiation (in the case of a transmissive mask) or reflection (in the case of a reflective mask) depending on the pattern on the mask. In the case of this cover, the support structure will generally be a masking station which ensures that the mask can be held in the desired position of the incoming light beam and that it can be moved relative to the beam (if so required). Another example of a patterned device is a programmable mirror array. An example of this array: an example of a material addressable surface having a viscoelastic (four) layer and a reflective surface. The basic principle behind this device is, for example, that the reflective surface is addressed = reflected incident light as diffracted light&apos; and the unaddressed region reflects incident light as un-reflected light. Using a suitable filter, the un-diffracted light can be filtered out of the reflected beam, and only the side is diffracted. In this way, the light beam becomes patterned according to the addressing pattern of the matrix addressable = face. One of the alternatives to the programmable mirror array: Example: 矩阵Using a small mirror matrix configuration, #by applying appropriate localized electricity 22: Ge? By using an electric actuator, each of the mirrors can be individually tilted about the axis. A +, # &amp; 1 ^ Again - the person is matrix-addressable such that the addressed = reflected the incoming beam of radiation in different directions to the unaddressed mirror. Thereby, the reflected beam is patterned according to the addressing pattern of the matrix addressable mirror. 13 201203317 Perform the required matrix addressing using the appropriate electronics. The patterned device may comprise one or more programmable mirror arrays in the two sides described above. Further information on the mirror arrays as referred to herein can be seen, for example, from U.S. Patent Nos. 5,296,891 and 5,523,193 and PCT, the disclosure of WO 98/3 8597 and WO 98/33096. In the case of a programmable mirror p train, the support structure can be embodied as a frame or table, for example, which can be fixed or movable as desired. Another example of a patterned device is a programmable LCD array. An example of such a configuration is given in U.S. Patent 5,229,872. As above, the support structure in this case can be embodied as a frame or table, for example, which can be fixed or movable as desired. The terms "radiation" and "beam" are intended to include all types of electromagnetic radiation used to pattern the anti-contact agents on the substrate. Such may include X-ray, ultraviolet (UV) shots (eg, having wavelengths of 365 nm, 248 nm, 193 nm, 157 nm, or 126 nm) and ultra-ultraviolet (euV) radiation (eg, having a range of 5 nm to 20 nm) The wavelength in the middle), as well as a particle beam (such as an ion beam or an electron beam). Some specific examples of the invention may include additional steps for measuring the concentration ratio of gas-chemical solvent vapor. For example, in some embodiments, a sensor can be used to determine the mass flow rate of gas through the gas supply. Alternatively or additionally, certain embodiments of the invention may measure the pressure of a chemical solvent in a membrane contactor. Some specific examples of the invention include an additional step for controlling and/or adjusting the concentration ratio of gas to chemical solvent in the gas/chemical solvent mixture to a predetermined ratio 14 201203317. For example, some embodiments of the present invention may adjust and/or control the concentration ratio of gas to chemical solvent in the gas mixture by adjusting/controlling the mass flow rate of the gas through the gas supply. Alternatively or additionally, certain embodiments of the invention may adjust/control the pressure and/or flow of the chemical solvent before or when the solvent enters the membrane contactor. In some embodiments, the pressure and/or flow rate of the chemical solvent when the chemical solvent is in the membrane contactor can be adjusted and/or controlled. This 荨 feature will be further described below with respect to the drawings. Figure 1A illustrates a membrane contactor that can be used as an evaporator. The gas stream enters the evaporator 2 via the fiber chamber 3 at the joint, and traverses the interior of the vaporized state 2 at the chamber 3, where it is transferred by the membrane contactor 2 and the chemical solvent is scrambled 1 The knife is opened and the membrane contactor 2 is withdrawn via the fiber chamber at the connector 4〇. The hot air-cutting gas 4 enters the outer casing via the connecting member 3G and substantially fills the space I between the inner wall of the outer bite and the outer diameter of the fiber (also #, membrane contactor shell) and exits via the connector 20. Shi: The specific example of Ming uses a chemical solvent vapor permeable membrane =. The chemical solvent vapor enters the outer shell via the shell side and diffuses through the membrane. . The resulting mixture is withdrawn from the membrane via the fiber chamber at the joint 4 for use in the flow of the first in the present invention - ... 八 亡 乂 漆 包括 包括 包括 包括 包括 包括 包括 包括 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有a two-zone, wherein the first-zone zone...the gas permeable membrane film that resists liquid intrusion may be a foldable or weighted sheet' or may be joined at the opposite side

S 15 201203317 Forming Hollow Fibers Necessarily, the film incorporates any sealant or adhesive used to bond the crucible to the outer casing to prevent the liquid from operating under normal operating conditions (eg, 3 mash/square inch or less) Invade people into the gas. The membrane is preferably configured to maximize the surface area of the membrane in contact with the gas and chemical solvent and to minimize the volume of the membrane. The evaporator may contain more than one membrane per device as described below. An evaporator having a hollow fiber membrane typically comprises: a) a plurality of gas permeable hollow fiber membranes having a first end and a second end, wherein the membranes have an outer surface and an inner surface, wherein the inner surface a comprises One of the first region and the second region; b) each end of the bundle impregnated with a liquid-tight seal formed to have an end structure that surrounds the outer s, wherein the fiber ends are open to fluid flow; An outer casing having an inner wall and an outer wall, wherein the inner wall defines another one of the first region and the second region between the inner wall and the hollow fiber membrane; d) having a purge gas inlet and a purge gas mixture outlet connected to the gas source An outer casing; and e) an outer casing having a chemical solvent inlet and a chemical solvent outlet connected to a source of chemical solvent, wherein the gas inlet is connected to the first end of the bundle and the gas mixture outlet is connected to the second end of the bundle, or a chemical solvent inlet Connected to the first end of the bundle and the chemical solvent outlet is connected to the second end of the bundle. The hollow fiber membrane used in the version of the evaporator of the present invention is typically one of the following: a) a hollow fiber membrane having a porous peeled inner surface, a porous outer surface and a porous support structure therebetween; b) having Hollow fiber 16 having a non-porous peeled inner surface, a porous outer surface and a porous support structure therebetween 201203317, C) a hollow fiber membrane having a porous peeled outer surface, a porous inner surface and a porous support structure therebetween; or d) having A hollow fiber membrane that is non-multiple-attached to the outer surface, the porous inner surface, and the porous support structure therebetween. These hollow fiber membranes can have an outer diameter of from about 350 microns to about 1450 microns. The hollow fiber membranes of the work, field, etc. are hollow fiber membranes having a porous peeled inner surface, a porous outer surface and a porous support structure therebetween, or a hollow fiber membrane having a porous peeled outer surface: a porous inner surface and a porous support structure therebetween Preferably, the porous perforated surface pores have a diameter or a maximum aspect ratio of from about 1 i to about 0 μm to about 5 μm. Peeled in the surface? Why do you want to move? The hole in the surface of the skin preferably faces the liquid flow

Suitable for the film (4) package (4) lysone (PE polytetrafluoroethylene (PTFE), 噌, into " Zheng polypropylene, polyfluorene, perfluoroalkoxy (PFA) and other thermoplastic polymers or perfluorinated Polymer. The use of the outer shell of the polyethylene (4) is particularly preferred. The non-wettable polymer is particularly preferably used with two gases: polymer, especially suitable for high pressure up to A,,,,,,, and machine oxidation. (for example, SOx &amp; ΝΟχ 'where X is a temporary trip from 1 to 3, 4 ms into a mixture of 5. The appropriate material for the hollow fiber membrane should be used for the outer shell of the shell &amp; alpha - material day ± female soil material is hot phase valley. In the selection of hollow fiber, factors such as porosity, surface energy, thirst and water can be considered. Some specific examples can cover the hollow film and the 'water τ τ』 τ工胜 is willing to use surface treatment to allow the chemical polymer of the chemical solvent to be used, including perfluorinated thermoplastic (PTFE-co-PFVAE), ~ dilute, - perfluoro (calcyl-based)越)) (poly j· - ^ R (four-rolled ethylene-co-hexafluoropropylene) (FEP) 哎 its blend, because these people; ^ a 〇 It is not affected by the strict conditions of use 201203317. PFA Teflon® is an example of poly(PTFE-co-PFVAE) in which the alkyl group is mainly or completely propyl. FEP Teflon® is one of poly (FEP) Example. Both are manufactured by DuPont. Neofl〇nTM PFA ( Daikin

Industries) is a polymer similar to PPont Teflon® from DuPont. The polyalkylene group (PTFE-co-PFVAE) is described in U.S. Patent No. 5,463,006, the disclosure of which is incorporated herein by reference. A preferred polymer is Hyflon® poly(PTFE-co-PFVAE) 620 available from Ausimont USA, Inc., Thorofare, N. J. The method of forming such a polymer into a hollow fiber membrane is disclosed in U.S. Patent Nos. 6,582,496 and 4,902,456, the contents of each of each of each The infusion is a process of forming a blind sheet having a liquid-tight seal around each fiber. A tube or can separates the interior of the evaporator from the environment. The can is thermally bonded to the outer casing to create an integral end structure. The integral end structure is obtained when the fibers and cans are bonded to the outer shell to form a single-body consisting only of a thermoplastic material (e.g., 'perfluorinated thermoplastic material). The integral end structure comprises a portion of the fiber bundle contained in the infusion end, the end of the can and the thermoplastic outer casing: a portion whose inner surface conforms to and is bonded to the can. By forming a unitary structure: a more stable evaporator is produced, and it is unlikely that there is a fault at the interface between the tank and the outer casing. In addition, the % integral end structure avoids the need to bond fibers in place using an adhesive such as lacquer. This: The agent typically includes volatile hydrocarbons, which pollute the evaporator through:: In terms of, using one of the marketing 丨 humidification = I two rolled body significantly has the taste of epoxy resin, this clearly Refers to the unacceptable hydrocarbon content of the limb, which may be hundreds of ppm. Infusion and clock 18 201203317 The process is an adaptation of the method described in US Application No. 60/1 1 7,853, filed Jan. 29, 1999, the disclosure of which is incorporated herein by reference in U.S. Pat. No. 6,582,496 and pCT/US2 Coffee/(8) 2378 Its teachings are incorporated by reference. The bundled hollow fiber membranes are preferably prepared such that the first end and the second end of the bundle are impregnated with a liquid-tight thermoplastic seal (e.g., a perfluorinated seal) to enclose the thermoplastic outer shell (e.g., The perfluorinated outer shell % forms a single unitary end structure comprising both the first end and the second end, wherein the fibers of the ends are individually open to fluid flow. In some embodiments, the unsaturated polyester (UPE) can be used. Infusion for infusion of υρΕ fibers. The outer casing or membrane contactor shell can be made of any material that is compatible with chemical solvents, intended uses, and hollow fiber membranes. For example, the outer casing can be stainless steel: polyethylene, polypropylene, PFA, PTFE, or the same material as described above. Fig. 1B illustrates an example of an embodiment of the present invention. This example is directed to the use of a hollow fiber membrane based on a polymer containing a polymer to liquefy a chemical solvent (for example, The HMDS vapor is introduced into the gas stream (for example, N2 gas stream) by using the membrane contactor 2. The chemical solvent vapor 43 is supplied by the chemical solvent source 435. The flow rate and temperature of the chemical solvent 43G The concentration and/or pressure may be controlled by the controller 450. The gas supply (10) also supplies the gas flow to the __^ flow, temperature, humidity, and/or pressure of the gas stream may be controlled by the controller 460. The chemical solvent vapor 43 is passed through the inlet 1G1 Flowing in the side of the shell of the membrane, and the money is flowed from the inlet 102 on the chamber side 2B of the membrane contactor 2, and the gas is diffused into the carrier gas by the membrane. The carrier gas carries the chemical solvent vapor, thereby Producing a carrier gas-vapor mixture that can be deposited on the substrate to enhance the transfer of light 19 201203317 lithographic pattern on the substrate coated with the photoresist. Gas-chemistry can be carried out via the inlet 丨03 through a gas-chemical solvent mixture line The solvent mixture 5〇5 is transferred to the substrate. By providing a gas-chemical solvent mixture at the point of use, the specific example of this method minimizes process defects and contamination, and improves process control for better process stability. An example embodiment of the invention for use with point contact 2 (shown in Figures 1A-a), which is coupled to a gas supply system 丨〇〇 (described below with respect to Figure 7) and serves as a Supply An evaporator system of 胄 128. A specific example of the invention may use a point solvent to introduce a chemical solvent vapor into a gas supplied by a gas supply system. The point contactor 2 may be coupled to a gas outlet 丨 3 〇 '丨One or more of 3 Bu 1 32. The contactor 2 can introduce a chemical solvent vapor into the gas stream 420 using a hollow fiber membrane based on the appearance polymer. The helium gas can be a chemical solvent 430 (supplied by the supply source 435) ), such as liquid or gas hexamethylene bismuth 4@ ( HMDS ). His possible chemical solvents 430 include N-methyl-2-.pyrrolidone (NMP), isopropanol (IpA) 'lactic acid Ethyl ester, cyclohexanol, propylene glycol monoterpene ether acetate (pgmea), propylene glycol monoterpene ether (PGME) or acetone. The membrane contactor 2 is in fluid communication with a gas supply source 1 and a chemical solvent supply source 435. The gas supply source 100 supplies a predetermined amount of gas (such as n2) to the membrane contactor 2 and the chamber side 2B of the outer casing 51. Similarly, a chemical solvent source 435 provides a chemical solvent to the membrane contact 2 and the shell side 2 A of the outer casing 5丨2. As explained with reference to Figure a, since the shell side 2 of the contactor is permeable to the chemical solvent, the chemical solvent diffuses through the contactor 2 onto the gas stream, 20 201203317 resulting in a chemical solvent vapor-gas mixture. The membrane contactor 2 is also in fluid communication with the chemical solvent-gas mixture line 5〇5 on the other end of the membrane contactor 2. The chemical solvent-gas mixture line 5〇5 is used to transport the chemical solvent-gas mixture formed in the membrane contactor 2 for use in coating the surface of the substrate in photolithographic applications. Thermal sensing and control devices (generally shown as chemical solvent controller 45A and gas controller 460) can be further utilized to maintain a stable temperature of the chemical solvent-gas mixture. In particular, since a chemical solvent is added to the gas stream, the nature of the chemical solvent-gas mixture (such as the richness or purity of the chemical solvent) can be controlled by the ground. For example, the temperature can be controlled to a concentration of about + ρΓ # by the airflow (the body is again shown as a heated or unapplied pain coat), the chemical solvent, or a combination of these. degree. ; borrowing a chemical solvent in the gas stream so that the gas does not invade to the pressure between the chemical gas and the chemical solvent, the concentration of the chemical solvent in the gas flow: the degree 'and the chemical concentration of the sword in the gas . Can be controlled by temperature, pressure corpse _ 5 /. Or the following, the force of the gas, the gas flow rate, or the combination of the chemical solvent in the gas stream, the concentration of any solvent in the gas stream, the concentration of the female is basically ambiguous to maintain the chemical concentration change. About 5% or less, the second right, the chemical solvent in the milk mixture and in other versions, in the two versions, the change is 1% or less, and the vapor is mixed in the purge gas: • The time period of the gas mixture can be less than about 〇.5% by controlling to evaporate. Controller 46〇), with the gas current, the motoring rate (the gas flow rate, any combination of these to achieve a change of the flow rate of a diluent gas or a chemical solvent concentration of 5% or less) 21 201203317 chemical solvent 430 The concentration in the mixture. The output from the chemical solvent concentration sensor can be used by the controller 450 in the control loop to adjust the gas or chemical solvent pressure, adjust the temperature of the chemical solvent or gas, and adjust the amount of diluent gas added to the gas mixture. Or any combination of these to achieve the amount of chemical solvent in the gas to form a variation of less than 5% in some versions of the invention, less than 1% in some versions, and less than in other versions. a gas mixture of 0.5% chemical solvent concentration. It may be advantageous to maintain the temperature of the gas or gas mixture to a temperature range within the photolithographic process tolerance to minimize thermal expansion or contraction of the optical elements in the projection device and Reducing the change in refractive index. It is advantageous to maintain the concentration of the chemical solvent in the gas mixture within such ranges to achieve a refractive index and The change in the results of the measurement is minimized. The relative amount of chemical solvent in the gas mixture can be controlled in different ways. For example, the amount of gas introduced into the contactor 2 relative to the amount of gas having a chemical solvent of 43 Å can be controlled. The amount of gas that is not chemically dissolved, 丨43〇. The parameter controlled can be one or more of the internal temperature, the waste force, and the residence time of the gas in the chemical solvent. The temperature is known to have a saturation of the chemical solvent. The effect of the quantity. In order to control the temperature, the contact H2 may be provided with a heating element (not shown) which is controlled by the control device or the control element in response to a temperature signal indicating the temperature provided by the temperature measuring device inside the contactor. Control. When the chemical solvent increases with pressure, the rate of the chemical contactor increases. Since the chemical solvent has a lower surface tension: 22 201203317 nature, this permeation rate can also increase. As the gas flows through the contactor 2 Cavity side 2 B 'This infiltrated chemical solvent vapor is mixed in the gas stream to form a gas-chemical solvent mixture as long as there is a chemical solvent and gas Permeation occurs when the degree is poor and the gas is not saturated. The gas-chemical solvent mixture carries only the chemical solvent vapor in the gas stream. There are no liquid molecules in the gas-chemical solvent mixture. Figure 3A is an example of an example according to the present invention. An example of a system for supplying a chemical solvent-gas mixture to a substrate 65. The system includes a membrane contactor 2, a substrate (eg, wafer) 65, a concentration sensor 67, a temperature controller (heater) _, gas mass flow controller _, liquid pressure regulator 695 and liquid flow meter 699. As explained herein, the gas flow is supplied by a gas supply source 100 that can have a variable pressure to the diaphragm contactor 2. The gas supply can be guided Through the temperature controller _ and the mass flow s controller 690. The temperature controller 680 can heat or cool the gas to control its temperature. Since the gas reservoir supplies a gas at a variable pressure, the gas mass flow rate is controlled to 690 in &lt; η Λ &gt;* to provide a stable gas flow to the membrane contactor 2. The 艚 艚 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 ώ曰 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 To control the concentration ratio of the gas. The reagent supply source 435 will be a chemical solvent (for example, liquid or gas Η. 1VL L) 〇 ) Momo contactor 2. The chemical solvent liquid supply 435 can be coupled to the body force adjustment Β and the liquid flow meter 699. Liquid pressure adjustment ^ G 3 and liquid, clothing 曰 ^, ± body 罝 699 control the liquid mass velocity in the membrane contactor 2. copper. . The p-state 095 and the flow meter 699 can be coupled to a processor (not shown) of the appropriate stylized 23 201203317. The processor is coupled to the concentration sensor 670. The concentration sensor 670 is facilitated to the membrane contactor 2 The chemical solvent mass flow rate is controlled, and the liquid pressure in the membrane contactor 2 is controlled. The chemical solvent diffuses while the gas is passing through the chamber side 2B of the contactor 2. The chemical solvent is carried by the gas. Forming a gas-chemical solvent conjugate. The vapor of this mixture is applied to the substrate or wafer 65 to enhance the transfer of the pattern to the surface of the substrate. The concentration sensor 607 can be used to measure the gas in the mixture and Chemistry &gt; concentration level of the granules. The concentration sensor 67 〇 can be electrically coupled to a suitably programmed processor (not shown), which in turn can be coupled to the gas mass flow controller 690 or pressure regulation 695 and flow meter 699. The programmed processor analyzes the data to determine if it matches a variable typed by the operator, and the variables determine the desired concentration ratio of gas and chemical solvent in the mixture. If the detector data does not match the predetermined concentration ratio data, then the processor communicates with the gas mass flow controller 690 or the liquid pressure regulator 695 and adjusts the gas mass flow controller 69 or the liquid pressure regulator 695. Figure 3B is based on DETAILED DESCRIPTION OF THE INVENTION Example of the use of the spot membrane contactor 2. As explained above, the gas stream 42〇 and the chemical solvent 43〇 are introduced to the respective inlets of the membrane contactor 2 and the chemical solvent_gas mixture 5〇5 The exit from the cavity side of the membrane connector is transferred to the surface of the substrate 65 (eg, wafer). The heating plate 660 can be used to heat the substrate 65 〇 for transferring the pattern to the substrate 650. Use of the membrane contactor 2 The point nature reduces process contamination and removes the need for a large transfer tube for transferring the mixture to the substrate surface. Figure 2C includes a chemical solvent evaporation rate () and gas flow normalized over the area of the crucible. The relationship between the flow rate (Ι/min/m2). The chemical solvent used in the example shown in Figure 3C is HMDS, the gas flow is nitrogen, and is compatible with liquid HMDS. A peek hollow fiber membrane that allows good Hmds to penetrate the air. The data points marked with a hollow circle indicate the HMDS flowing through the membrane area of 0. 平方 4 square feet. The data points marked with solid circles indicate a flow of 0.03 5 squares. The HMDS of the membrane area of the foot, and the data points marked by the plus sign indicate the HMDS flowing through the membrane area of 0.14 square feet. As shown in Figure 3c, the chemical solvent content decreases with the gas flow rate at the fixed membrane area. And increase (see data points labeled P-2 and CF-3). At a given airflow rate, chemical &gt; agent saturation increases with increasing membrane area. Adjacent to each data point (ie, 'hollow Circles, solid circles, and twisted numbers appear as numbers that do not correspond to the measured HMDS vapor concentration percentage for a particular gas (horizontal axis) and chemical solvent (vertical axis) flow rate. For example, for a particular device having a membrane area of approximately 〇14 square feet, the gas flow rate is 4 liters per minute (1/min/m2) per square meter and the chemical solvent flow rate is per square meter per minute. At 4 liters, the concentration of chemical solvent vapor in the outlet is about 40 percent. The data points marked with the plus sign and the term "P-2" are outliers (due to experimental error). Figure 3D includes the chemical solvent evaporation efficiency (saturated as %hmds) and airflow (1/min/ A curve of correlation between m2). In Figure 3d, 25 201203317 HMDS 'flow is nitrogen, and the membrane. The chemical solvent used in the example shown by the HMDS evaporation as a function of the amount shown in Figure 3D is the nitrogen flow gas saturation normalized as the master film area using a specific surface treated PEEK hollow fiber curve as described in Figure 3 C It is suggested that the chemical solubility of the steamed milk is increased as the membrane area increases. Due to the rate limit method, the bucket _ &amp; , (the afternoon suction step is a Hmds via the membrane, so the curve shown in Figure 3D can be used to determine the target chemical solvent saturation and gas flow in the J 牡 疋The flow rate is applied to the appropriate size of the membrane area. To obtain the curve shown in Figure 3D, an evaporative P evaporator with various membrane surface areas was fabricated to measure various nitrogen flow rates under various test conditions (by "X" indicates the percentage of the HMDS square a π 4 rolling (represented by "γ"). The HMDS 菽 之 a a a a a a a a a HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM HM The flow rate (X) is related to the following relationship: · 1η(Υ) = -0.445 * ln(X) + 6.41 For example, 'Using the above formula, in order to achieve 9 百分之 surface 5 vapor concentration' above the surface area The normalized nitrogen flow rate is about 721 / _ 2. Figure 4 is a high-order example of the present invention. The specific example of the example includes a two-example embodiment in which the membrane contact H 2 'membrane contactor 2 is configured to be chemically solvent permeable. Example 600 further includes an adhesion promoter supply source 435 for adhesion promotion The supply source 435 is used to supply the chemical solvent 43A to the first side 2A of the crucible. The chemical solvent 43 is diffused to the first side of the membrane via the first side of the membrane 2B. Example 6 further includes a gas supply source In other words, the gas supply source 100 supplies the gas stream 420 to the second side 26 of the membrane and to the chemical solvent of the diffusion 26 201203317. The gas stream 420 forms a gas-chemical solvent with the diffused chemical solvent to cover the surface of the plate 5 1 0 . Mixture 505. This example embodiment advances include a photochemical light source 5 2 0 'photolithographic light source 5 2 〇 applying an optical exposure 530 that transfers the pattern to the substrate surface 510. Covering the substrate surface 丨 gas-chemical solvent mixture 505 Transfer of the reinforced pattern to the substrate surface 5 1 图 schematically depicts a lithographic projection apparatus 1 that can be used in an example of the present invention. The apparatus 1 includes a bottom plate BP and a gas supply system. The device 1 can also include a radiation source LA. (eg, EITV radiation) ^ The first object (mask) stage MT is configured to hold the mask μα (eg, ★, proportional light)

The mask holder is attached to the first positioning device, and an A σ step-clamping device PM accurately positions the projection system or lens PL. Early heart. The second object (substrate) table WT has a substrate holder configured to hold the substrate w (for example, a resist wafer coated with a resist), and is connected to the second positioning device PW, and the second positioning device PW is The projection system PL is accurately positioned = plate. A projection system or lens PL (e.g., a mirror group) is configured to image the illuminated portion of the mask onto the target portion c of the substrate w. The target portion c may include one or more crystal grains. A is set to have a reflection type ' and includes a reflective mask (material MA). However, in general, the device can also be of a transmissive type and include a transmissive mask. Alternatively, $ can use another type of patterned device, such as a programmable mirror array. The source of the radiation source (e.g., an electrical source generated by electrical discharge or laser) produces an illuminating ray. This radiation is fed into the illumination system (illuminator) directly or after the adjustment device (eg, beam expander EX) has been traversed. The brightener may include an adjustment device AM that adjusts the intensity of the device in the beam set to the outer diameter of the 2012 20121717 distribution and/or the internal radial extent (usually referred to as s external (S 〇Uter) and s internal (s -inner)). In addition, it can generally include various other components such as the illuminator IN and the concentrator CO. In this way, the radiation beam PB striking the mask MA has a desired uniformity and intensity distribution in its cross section. The source LA can be in the housing of the lithographic projection device, which is often the case when the source La is a mercury lamp, but it can also be remote from the lithographic projection device. The radiation generated by it is directed into the device. When the source LA is a quasi-molecular laser, it is often the case for the latter. The radiation beam PB then intercepts the mask ma held on the mask stage τ. After the mask MA has been loosened, the radiation beam PB passes through the lens PL, and the lens PL focuses the wheel beam PB onto the target portion c of the substrate w. By means of the second positioning means PW and the interferometer IF, the substrate power can be accurately moved (e.g., to: different target positions C in the path of the bit radiation beam PB). Similarly, the first positioning means PM can be used to pinch the mask MA accurately with respect to the path of the beam (e.g., after the self-mask library mechanically operates the mask μα or during the sweep). In general, it can be moved by means of a long-stroke module (coarse positioning) and a short-circuit module, (fine positioning), and the movement of the object table MT and WT. However, in the case of a wafer stepper (as opposed to step and scan devices), the mask ¥ MT can be connected only to short-stroke actuators, or can be relatively thin. You can use (5) to align mi &amp; M2 and substrate alignment marks ^ and μ alignment masks; and substrate W. ... Use the different η in different modes · · Firstly, enter the mode to keep the mask stage μτ, its D Μτ is basically h, and immediately project the entire 4 28 201203317 cover image (that is, single-"_" to the target Part c±). Or shifting the substrate table WT in the y direction so that different target portions are irradiated by the PB. Secondly, in the scan mode, the same situation applies, except that in the soap-"flash", the given target portion c is not exposed to the mask table MT in a given direction (so-called "scanning direction", such as month. , γ direction) is moved by speed v so that the Korean beam pB is scanned in the mask. At the same time, in the same or opposite direction, press the substrate ^, where Μ is the magnification of the lens &amp; (typically, m = or this way can expose a relatively large target &amp; resolution). Figure 6 illustrates an active and lightweight system 2 that can be used in the lithographic projection apparatus i of Figure 5. The viewing system 2 includes an illumination optics unit: 4. The radiation system 2 can also include a source collector module or radiation. Unit 3 Single 疋3 has a material that can be formed by discharge plasma. ^Can use gas or vapor, such as gas (Xe) gas or clock (1)... can produce very hot "to emit in the electromagnetic spectrum euv = ^ Light shot. By causing partial ionization of the discharge to collapse into the light... To: Very hot. It may be necessary to use Xe, u?$ gas or any other milk or sulphur (U _ part of the pressure to use Generated by radiation. The light emitted by the light source LA is transmitted from the source chamber 7 to the collector chamber 8 via a gas barrier: structure or "morphine" 9. The gas barrier includes the invention in Wu Guo Patent No. 6,862 The channel structure described in detail in 〇75 and 6,359,969. The collector chamber 8 contains The collector-transfer collector 丨 can be a 29 201203317 grazing incidence collector. The trajectory transmitted by the collector 10 is reflected away from the virtual source point 12 to be placed in the hopper of the collector chamber 8 a light handle spectral illuminator U. From the chamber 8, the projection beam 16 is reflected by the normal incidence reflectors U and U in the illumination optics unit 4 to a proportional reticle positioned on the scale reticle stage MT or On the mask, a patterned beam π is formed which is imaged onto the wafer platform or substrate table WT via the reflective elements 18 and 19 in the projection system PL. More components than can be present in the illumination optics unit 4 and projection system PL. The lithographic projection apparatus 1 comprises a gas supply system (10). The gas supply outlets 13A to 133 of the gas supply system 100 are positioned in the projection system and in the illumination optics unit 4, in the reflectors 13 and 14 and The reflective element 18 and the 'near. 35. If so required, the other parts of the device may equally be provided with a gas supply system. For example, the proportional reticle of the lithographic projection device and one or more sensors may be provided with a purge gas. Supply system The gas supply system _ can be positioned inside the lithographic projection device i. The gas supply system (10) can be controlled in any manner suitable for a particular implementation using any device in the i &quot; 卜部. However, it is equally possible to supply the gas supply system (10) At least some of the portions are located in the lithography projection &quot; section (gas mixture generator 1 2 〇). Figure 7 illustrates a specific example of the gas supply system 100. The gas inlet π 〇 is connected to supply a substantially moisture-free dry gas Gas supply means (not shown). For example, a pressurized gas supply circuit, gas red with compressed dry = (for example, nitrogen (N2), ammonia or other gases) may be used. Do not generate 3120 feed dry gas. In the gas mixture generator, 30 201203317, the dry gas can be further purified. In a specific example, the oxygen is supplied. The n ^ hole Mt, the source 12 〇 may be coupled to the net device m, the flow meter 127, the inter-125, the reducer 129, the heat exchanger (3), and the evaporator according to a specific example of the present invention. The gas f' can be supplied to the purifier device 2 via the gas inlet 1 1 , and the compressed dry air (CDA) from (3) can be supplied to the purifier device via the purge gas inlet u〇 128. _ Purified by Purification Benefit 128. The purifier 128 includes two parallel and _, each of which includes in the flow direction: an automatic coffee or coffee and eight renewable purifier devices 283 or 1284. J Dansheng Huayiyi Device 1283 夂 each has a heating element for heating and thereby separately and independently regenerate the respectiveizer devices 1283 and 1284. For example, a thousand 丨J called 5 can use a purification 5|. to manufacture gas, while regenerating another 〇 π 尺 丹 王 is 'Yu Huayi. The flow branch is in the purification. The downstream connection of the celestial parts 1283 and 1284 is s+ production reduction 198_ is connected to the shut-off valve 1 2 8 5 which can be controlled by the gas purity sensor 286. The exchanger 126 can provide a purified ":milk (CDA) at a substantially ambiguous temperature. The heat exchanger 126 extracts heat or adds heat to the conditioned gas (such as purified 眚#彳化的 CDA)' in order to achieve a suitable temperature for the specific rolling of her body. For example. /Jj; 5, in the shadow projection device, using stable processing conditions and smashing crying ^ ..... The temperature of the purified CDA is thereby stabilized to have a gas/dishness that is constant or in the pre-existing temperature range over time, -E/H. Heat exchanger i 26 can be used, sleeve ##尸γ ρ.+ is used for the temperature of the rolling body of 5 weeks to modify the vapor uptake of the vaporizable liquid from Luo, .... The purified gas can pass through the yang to 143 to 145 and pass through multiple gases 31. 201203317 = 131 '(1) Output. The air resistance (4), i44, (4) restricts the gas 罝, so that at each of the purge gas outlets 13〇, 13 and 132, the desired fixed purification 艚, ώ 疋The shape of the body and the pressure. The appropriate valve for purifying the gas at the outlet of the purge gas can be, for example, 1〇 1. It may be possible to provide an adjustable gas flow at each of the purge gas outlets (10), 131, 132 using an adjustable gas barrier. All patents, published applications and references cited herein are not taught. The entire contents of the present invention have been specifically described and described with reference to the specific examples thereof, but it is to be understood by those skilled in the art without departing from the scope of the appended claims. In the case of materials, various changes in form and detail can be made therein. [Circular Simple Description] Fig. 1A illustrates a membrane contactor that can be used as an evaporator. Fig. 1B illustrates an example of an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION One example of the invention for use of a point evaporator is shown in Figure 3A. Figure 3B is an illustration of a use of a point film contactor in accordance with an example embodiment of the present invention. A plot of the chemical solvent flow rate (hmds) versus the flow rate of the gas stream. Figure 3D includes an illustration of the chemical solvent (HMDS) evaporation efficiency versus the gas flow (N2). Correlation curve Figure 4 is an illustration of an example of an embodiment of the invention. 32 201203317 Figure 5 schematically depicts a lithography projection apparatus. Figure 6 illustrates a projection system that can be used in the lithography projection apparatus of Figure 1 Radiation system Fig. 7 illustrates a specific example of a gas supply system. [Main component symbol description] Reference symbol 1 in Fig. 1 A: Air flow 2: Evaporator/membrane contactor 3: Fiber chamber 4: Chemical solvent vapor 1 0 : Connector 20: Connector 30: Connector 40: Connector Figure 2B Reference symbol 2: Membrane contactor 2A: Shell side 2 B: Cavity side 100: Gas supply source 1 0 1 : Inlet 102: Inlet 103: Inlet 430: Chemical solvent vapor 435: Chemical solvent source 33 201203317 450: Controller 460: Controller 5 0 5: Gas-chemical solvent line mixture Reference symbol 2 in Figure 2: Using the membrane contactor 2A: Shell side 2B: Cavity side 100: gas supply 128: gas supply 130: gas outlet 1 3 1 : gas outlet 132: gas outlet 420: gas flow 430: chemical solvent 435: chemical solvent supply source 450: chemical solvent controller 460: gas controller 4 7 0 : unheated airflow 5 05 : chemical solvent-gas mixture line 5 1 2 : outer casing Reference symbol 2 in FIG. 3A: membrane contactor 2A: shell side 2B: chamber side 34 201203317 100: gas source 435: chemical solvent supply 650: substrate (for example, Wafer) 670: optional concentration sensor 680: temperature controller 690: mass flow controller 695: pressure regulator 699: flow meter reference numeral 2 in FIG. 3B: membrane contactor 420: gas flow 430: chemical solvent 505 : Chemical-solvent mixture 6 5 0 : Substrate 660 : Heating plate Reference symbol CF-3 in Fig. 3C : Data point P-2 : Data point Reference symbol 2 in Fig. 4 : Synthetic film 2A: First side of the film 2B: second side of the membrane 100: gas supply source 420: gas flow 35 201203317 430: chemical solvent 435: chemical supply source 505: gas-chemical mixture 5 1 0: substrate surface 5 20: light source 530: optical exposure 600: EXAMPLES Example 1 Reference symbol 1 in FIG. 5: Projection device 100: Gas supply system AM: Adjustment device BP: Base plate C: Target portion CO: Condenser EX: Adjustment device IF: Interferometer IL: Illumination system IN: Accumulation LA: light source Μ1: mask alignment mark M2: mask Alignment mark ΜΑ : mask ΜΤ : mask Ρ 1 : substrate alignment mark 36 201203317 P2 : substrate alignment mark PB : radiation beam PL : projection system or lens PM : positioning device PW : positioning device W : substrate WT : substrate Table X: X direction Y: Y direction Reference symbol 1 in Fig. 6: lithography projection device 2: radiation system 3: source collector module or radiation unit 4: illumination optics unit 7: source chamber 8: collector Chamber 9: Gas barrier structure I 0 : Radiation collector II: Grating spectral filter 1 2 : Virtual source point 1 3 : Incident reflector 1 4 : Incident reflector 1 6 : Projection beam 1 7 : Patterned Radiation beam 37 201203317 1 8 : Reflecting element 1 9 : Reflecting element 100 : Gas supply source 120 : Gas mixture generator 130 : Gas supply outlet 1 3 1 : Gas supply outlet 132 : Gas supply outlet 133 : Gas supply outlet LA : Jurisdiction Source MT: mask stage 0: optical axis PL: projection system WT: substrate stage reference numeral 100 in Fig. 7: gas supply system 110: gas inlet 120: gas mixture generator 125: valve 126: heat exchanger 127: Flow meter 128: purifier device 128A: flow branch 128B: Flow branch 130: Gas outlet 38 201203317 1 3 1 : Gas outlet 132: Gas outlet 143: Air resistance 144: Air resistance 145: Air resistance 1281: Automatic valve 1282: Automatic valve 1 283: Renewable purifier device 1 284 : Renewable Purifier Device 1 285: Shutoff Valve 1286: Gas Purity Sensor 39

Claims (1)

201203317 VII. Patent application scope: 1. A chemical evaporation system for enhancing transfer of a pattern to a substrate surface, the system comprising: a chemical solvent permeable synthetic film; a chemical solution source for supplying a chemical solvent to An inlet on the first side of the membrane 'the chemical solvent diffuses to the second side of the membrane via the first side of the membrane; a gas supply source for supplying a gas stream to the second side of the membrane And the diffusion of the chemical solvent, the gas stream and the chemical vaporization of the diffusion are transferred to the surface of the substrate via an outlet on the second side of the 3H film; A lithographic light source for applying the optical exposure of the pattern to the surface of the substrate. The mixture on the surface of the substrate enhances the transfer of the pattern to the surface of the substrate. 2. The system of claim </ RTI> wherein the synthetic film is a microporous hollow fiber. 3. The system of claim 1, wherein the chemical solvent is hexamethyldioxane. 4. The system of claim </ RTI> wherein the gas stream is a nitrogen stream. 5. The system of claim </RTI> wherein the controller further comprises a controller configured to control a flow pressure of the chemical solvent source to the first side of the membrane. 6. The system of claim 1, further comprising a temperature control 40 201203317 Maker The temperature controller is configured to control the temperature of the chemical solvent. 7. The chemical composition further includes the concentration of the chemical solvent, as in the scope of the patent application. M, Chencheng control benefits are configured to control the chemicalization. 8. If the application of the patent scope 1st body supply source is coupled to the gas net, the step includes the H4 system supplied with the gas, and the purifying system of the money purifier system is For example, the system of paragraph 1 of the benefit range includes a gas flow control and a quantity control configured to control the flow pressure of the gas supplied to the side of the membrane. Wenlu I:! Please apply for a system of patents, including the airflow, and the second: &amp; ’ 虱 虱 温度 temperature controller is configured to control one of the airflows. a chemical evaporation method for transfer of a J-strength pattern to a surface of a substrate, the method comprising: supplying a chemical solvent to an inlet on a first side of the synthetic film, the chemical-based solvent passing through the film- Side diffusing to the second side of the crucible; supplying a gas stream to the inlet on the second side of the membrane and to the diffusion &amp; ^^4_ forming the second chemical solvent with the diffusion The exit on the crucible is transferred to the mixture on the surface of the substrate; and the optical transfer is applied to the surface of the substrate by transfer of the pattern to the surface of the substrate, the mixture on the surface of the substrate enhancing the transfer of the pattern to the surface of the substrate. 12. The method of claim n, wherein the synthetic film is a microporous hollow fiber. 41 201203317 13. The method of claim ii, wherein the chemical solvent is hexakisodiazane. 14. The method of claim 11, wherein the gas stream is a nitrogen stream. 15. The method of claim 11, further comprising controlling the flow pressure of the chemical solvent to the first side of the membrane. 16. The method of claim 11, further comprising controlling the temperature of the chemical solvent. 17. The method of claim 11, further comprising controlling the concentration of the chemical solvent. 18. The method of claim n, wherein the method further comprises purifying the supplied gas stream. 19. The method of claim n, further comprising controlling a flow pressure of the gas supplied to the second side of the membrane. 20. The method of claim n, further comprising controlling the temperature of the gas stream. Wei 21. A kind of light lithography for enhancing the transfer of pattern to the surface of the substrate. The system comprises: ~ Evaporation contactor, which comprises: for inputting chemical solvent into the mouthpiece 6 * a first side of the inlet, the chemical solvent is passed through the second side of the first side contactor; for inputting a gas flow to the contactor, the second inlet, the inlet of the A, the gas flow is formed a diffused chemical solvent ton. An outlet for the mixture from the second side of the contactor on the 'subsurface'; and a substrate 42 201203317 photolithographic light source for applying the pattern transfer Upon optical exposure to the surface of the substrate, the mixture enhances the transfer of the pattern to the surface of the substrate. 22. An evaporation system for modifying the surface energy of a substrate, the system comprising: a chemical solvent permeable synthetic film; a chemical solvent source for supplying a chemical solvent to an inlet on a first side of the film a chemical solvent diffuses through the first side of the membrane to a second side of the membrane; a gas supply source 'which supplies a gas stream to the inlet on the second side of the membrane and to the diffused chemical solvent, a gas stream and the diffused chemical solvent form a mixture transferred to the surface of the substrate via an outlet on the second side of the film; and a photolithographic light source for applying the optical for transferring the pattern to the surface of the substrate Exposure, the mixture on the surface of the substrate enhances the transfer of the pattern to the surface of the substrate. 23. The evaporation system of claim 22, wherein the chemical solvent is isopropanol. Eight, the pattern: (such as the next page) 43