TW201200281A - Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes - Google Patents
Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes Download PDFInfo
- Publication number
- TW201200281A TW201200281A TW100111227A TW100111227A TW201200281A TW 201200281 A TW201200281 A TW 201200281A TW 100111227 A TW100111227 A TW 100111227A TW 100111227 A TW100111227 A TW 100111227A TW 201200281 A TW201200281 A TW 201200281A
- Authority
- TW
- Taiwan
- Prior art keywords
- pulse
- time
- laser
- fixed rate
- shape
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1305—Feedback control systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Automation & Control Theory (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Lasers (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/753,659 US8476552B2 (en) | 2008-03-31 | 2010-04-02 | Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201200281A true TW201200281A (en) | 2012-01-01 |
Family
ID=44712830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100111227A TW201200281A (en) | 2010-04-02 | 2011-03-31 | Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8476552B2 (fr) |
| JP (1) | JP2013527601A (fr) |
| KR (1) | KR20130051441A (fr) |
| CN (1) | CN103081067A (fr) |
| TW (1) | TW201200281A (fr) |
| WO (1) | WO2011123449A2 (fr) |
Families Citing this family (32)
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| US9022037B2 (en) | 2003-08-11 | 2015-05-05 | Raydiance, Inc. | Laser ablation method and apparatus having a feedback loop and control unit |
| US8921733B2 (en) | 2003-08-11 | 2014-12-30 | Raydiance, Inc. | Methods and systems for trimming circuits |
| US9130344B2 (en) | 2006-01-23 | 2015-09-08 | Raydiance, Inc. | Automated laser tuning |
| US8232687B2 (en) | 2006-04-26 | 2012-07-31 | Raydiance, Inc. | Intelligent laser interlock system |
| US8598490B2 (en) | 2008-03-31 | 2013-12-03 | Electro Scientific Industries, Inc. | Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes |
| US10307862B2 (en) | 2009-03-27 | 2019-06-04 | Electro Scientific Industries, Inc | Laser micromachining with tailored bursts of short laser pulses |
| US20130200053A1 (en) * | 2010-04-13 | 2013-08-08 | National Research Council Of Canada | Laser processing control method |
| JP5552373B2 (ja) * | 2010-06-02 | 2014-07-16 | 浜松ホトニクス株式会社 | レーザ加工方法 |
| US8211731B2 (en) * | 2010-06-07 | 2012-07-03 | Sunpower Corporation | Ablation of film stacks in solar cell fabrication processes |
| WO2012021748A1 (fr) | 2010-08-12 | 2012-02-16 | Raydiance, Inc. | Micro-usinage au laser de tube polymère |
| KR20140018183A (ko) | 2010-09-16 | 2014-02-12 | 레이디안스, 아이엔씨. | 적층 재료의 레이저 기반 처리 |
| US20120160814A1 (en) * | 2010-12-28 | 2012-06-28 | Electro Scientific Industries, Inc. | Methods and systems for link processing using laser pulses with optimized temporal power profiles and polarizations |
| US8207009B2 (en) * | 2011-04-19 | 2012-06-26 | Primestar Solar, Inc. | Methods of temporally varying the laser intensity during scribing a photovoltaic device |
| US10239160B2 (en) * | 2011-09-21 | 2019-03-26 | Coherent, Inc. | Systems and processes that singulate materials |
| DE102012202519A1 (de) * | 2012-02-17 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht |
| US20140086523A1 (en) * | 2012-09-27 | 2014-03-27 | Bruce A. Block | Poling structures and methods for photonic devices employing electro-optical polymers |
| US10622244B2 (en) | 2013-02-18 | 2020-04-14 | Orbotech Ltd. | Pulsed-mode direct-write laser metallization |
| WO2014125470A1 (fr) | 2013-02-18 | 2014-08-21 | Orbotech Ltd. | Métallisation au laser par écriture directe en deux étapes |
| US20140336626A1 (en) * | 2013-05-10 | 2014-11-13 | Advalue Photonics, Inc. | Medical assembly using short pulse fiber laser |
| US10537027B2 (en) | 2013-08-02 | 2020-01-14 | Orbotech Ltd. | Method producing a conductive path on a substrate |
| JP2015145926A (ja) * | 2014-01-31 | 2015-08-13 | 日本電産コパル株式会社 | レーザ露光装置 |
| IL247946B (en) * | 2014-04-10 | 2022-08-01 | Orbotech Ltd | Pulsed-mode direct-write laser metallization |
| EP3023073B1 (fr) * | 2014-11-24 | 2021-01-27 | Fotona d.o.o. | Système laser pour ablation de tissus |
| US20170236972A1 (en) * | 2016-02-12 | 2017-08-17 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| CN108780976A (zh) | 2016-03-21 | 2018-11-09 | 鲁美斯有限公司 | 激光系统中的脉冲削波器 |
| US10665504B2 (en) * | 2017-07-28 | 2020-05-26 | Veeco Instruments Inc. | Laser-based systems and methods for melt-processing of metal layers in semiconductor manufacturing |
| EP3752317A4 (fr) * | 2018-03-23 | 2021-12-01 | Lawrence Livermore National Security, LLC | Amélioration de l'usinage et du perçage au laser à l'aide d'un laser continu à déclenchement périodique et d'un laser à impulsions courtes |
| WO2020231975A1 (fr) * | 2019-05-14 | 2020-11-19 | Board Of Regents, The University Of Texas System | Procédés et appareil de traitement de matériau soustractif au laser à grande vitesse et à rapport de forme élevé |
| CN114630635A (zh) * | 2019-11-12 | 2022-06-14 | 奥林巴斯株式会社 | 激光破碎装置、激光破碎系统以及激光破碎方法 |
| CN116323073A (zh) * | 2020-09-25 | 2023-06-23 | 古河电气工业株式会社 | 激光加工方法以及激光加工装置 |
| US12107381B1 (en) * | 2023-04-07 | 2024-10-01 | IntraAction Corp. | Cooling system for laser field systems |
| US11813697B1 (en) * | 2023-04-07 | 2023-11-14 | Intraaction Corp | Laser methods of fabrication of clothing |
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| US5004890A (en) * | 1990-02-20 | 1991-04-02 | Amada Company, Limited | Method of evaluating quality of a laser beam in a laser processing machine |
| JPH04276675A (ja) * | 1991-03-05 | 1992-10-01 | Matsushita Electric Ind Co Ltd | レーザ装置 |
| DE4200632C2 (de) * | 1992-01-13 | 1995-09-21 | Maho Ag | Verfahren und Vorrichtung zum Bearbeiten von Werkstücken mittels der von einem Laser emittierten Laserstrahlung |
| JP2816813B2 (ja) * | 1994-04-12 | 1998-10-27 | 株式会社小松製作所 | エキシマレーザ装置 |
| US6054235A (en) * | 1997-09-08 | 2000-04-25 | Photon Dynamics, Inc. | Color filter repair method |
| JPH11145581A (ja) * | 1997-11-10 | 1999-05-28 | Hitachi Seiko Ltd | プリント基板の穴明け方法および装置 |
| US6579283B1 (en) * | 1998-05-22 | 2003-06-17 | Edward L. Tobinick | Apparatus and method employing a single laser for removal of hair, veins and capillaries |
| US6243405B1 (en) * | 1999-03-17 | 2001-06-05 | Lambda Physik Ag | Very stable excimer or molecular fluorine laser |
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| CA2531353C (fr) * | 2004-12-21 | 2014-06-17 | Institut National D'optique | Source de lumiere laser pulsee |
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| US7732731B2 (en) * | 2006-09-15 | 2010-06-08 | Gsi Group Corporation | Method and system for laser processing targets of different types on a workpiece |
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| JP2008147406A (ja) * | 2006-12-08 | 2008-06-26 | Cyber Laser Kk | レーザによる集積回路の修正方法および装置 |
| JP2010515577A (ja) * | 2007-01-05 | 2010-05-13 | ジーエスアイ・グループ・コーポレーション | マルチパルス・レーザー加工のためのシステム及び方法 |
| US7817685B2 (en) * | 2007-01-26 | 2010-10-19 | Electro Scientific Industries, Inc. | Methods and systems for generating pulse trains for material processing |
| JP5123646B2 (ja) * | 2007-11-19 | 2013-01-23 | 公立大学法人大阪府立大学 | 超短光パルスの強度・位相情報再構築方法とこれを用いたレーザー加工装置 |
| US8231612B2 (en) * | 2007-11-19 | 2012-07-31 | Amo Development Llc. | Method of making sub-surface photoalterations in a material |
| US7817686B2 (en) * | 2008-03-27 | 2010-10-19 | Electro Scientific Industries, Inc. | Laser micromachining using programmable pulse shapes |
| US8526473B2 (en) * | 2008-03-31 | 2013-09-03 | Electro Scientific Industries | Methods and systems for dynamically generating tailored laser pulses |
-
2010
- 2010-04-02 US US12/753,659 patent/US8476552B2/en not_active Expired - Fee Related
-
2011
- 2011-03-29 WO PCT/US2011/030350 patent/WO2011123449A2/fr not_active Ceased
- 2011-03-29 CN CN2011800174455A patent/CN103081067A/zh active Pending
- 2011-03-29 JP JP2013502753A patent/JP2013527601A/ja active Pending
- 2011-03-29 KR KR1020127027324A patent/KR20130051441A/ko not_active Withdrawn
- 2011-03-31 TW TW100111227A patent/TW201200281A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011123449A3 (fr) | 2012-02-02 |
| US8476552B2 (en) | 2013-07-02 |
| JP2013527601A (ja) | 2013-06-27 |
| KR20130051441A (ko) | 2013-05-20 |
| US20100276405A1 (en) | 2010-11-04 |
| CN103081067A (zh) | 2013-05-01 |
| WO2011123449A2 (fr) | 2011-10-06 |
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