201205856 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及半導體領域，尤其涉及一種發光二極體的製 造方法。 【先前技系#】 [0002] 製造垂直結構發光二極體，通常方法是在藍寶石基板上 生長磊晶層，再用電鍍或者鍵合等方法將導電和導熱性 能良好的金屬或者半導體襯底材料與該磊晶層相接合以 作為磊晶層新的基板，再利用鐳射剝離技術或研磨的方 〇 法把磊晶層和藍寶石基板分離。由於當今的技術日趨大 面積晶片的應用，若利鐳射剝離技術存在兩個問題：一 是設備成本、營運費用較高，導致加工成本增加；二是 鐳射剝離技術因使用鐳射的高能量破壞磊晶層與藍寶石 基板的介面容易導致發光二極體的性能劣化，產生的應 力也容易使磊晶層破裂。另外，鐳射點的大小也會影響 處理時間，並不適合用於大面積晶片。而物理研磨的技 Ο 術與前述鐳射剝離技術比較，其成本及製造時間相對會 ... 下降，也無需考慮晶片大小的問題，但是在研磨過程中 ，研磨機不易區分基板與磊晶層之間的介面，很容易破 壞到磊晶層。 【發明内容】 [0003] 有鑒於此，有必要提供一種良品率較高的發光二極體製 造方法，可同時應用在不同尺寸的晶圓上。 [0004] 一種發光二極體的製造方法，包括下列步驟：提供一第 一基板；在所述第一基板上生成一研磨阻止層，該研磨 099125011 表單編號A0101 第3頁/共17頁 0992043935-0 201205856 阻止層的硬度大於第一基板的硬度；在所述研磨阻止層 上生長一發光二極體磊晶層；在所述發光二極體磊晶層 上接合一第二基板；研磨掉所述第一基板。 [0005] 所述發光二極體的製造方法中由於所述研磨阻止層的移 除速度相對第一基板會急速下降，可精確的控制研磨深 度，有效的保護發光二極體磊晶層不受破壞，從而提高 發光二極體良品率。 【實施方式】 [0006] 以下將結合附圖對本發明作進一步的詳細說明。 [00〇7] 請參閱圖1-6，本發明實施方式提供的發光二極體的製造 方法包括以下步驟。 [0008]如圖1所示，首先，提供一第一基板11。所述第一基板u 的材料可選自氧化鋁、矽、砷化鎵、磷化銦、碳化石夕、 藍寶石等材料。 [〇_]如圖2所示，在所述第一基拇11上形成一研磨阻止層12。 所述研磨阻止層12的硬度聲比所述第一基板丨丨大，其可 為透明材料或不透明材料。優選地，該研磨阻止層12為 透明材料’在後續制程中可以不需移除。所述研磨阻止 層12的材料可選自鑽石、類鑽碳、碳化矽、氧化鋁、石 英、氮化矽、二氧化矽、氮化鎵、氮化鋁、氮化銦中的 一種或幾種的混合。所述研磨阻止層12可通過金屬有機 化合物化學氣相澱積法（M0CVD)、等離子體增強化學氣 相沉積法（PECVD)、蒸鍍、濺鍍等物理或化學方式形成 在第一基板11上。所述研磨阻止層12可以為島狀點狀 099125011 表單編號A0101 第4頁/共17頁 0992043935-0 201205856 或片狀等任何形態’且均勻的分佈在第一基板u表面， 其保留空隙可為電流流通的路徑，再者，成長蠢晶層之 前形成一些凸塊結構也可以降低磊晶結構缺陷。所述研 磨阻止層12的厚度約為〇. 7微米~2微米以利於接下來所述 發光二極體磊晶層13的生長。 [0010] ❹ [0011] 如圖3所示，在所述研磨阻止層12上生長一發光二極體蟲 晶層13。所述發光二極體磊晶層13具有由化合物半導體 構成的多層複合結構。所述化合物半導體包括族半 導體和Π-VI族半導體。在目前發:光二極體領域，最為常 見的是GaN基的材料。 如圖4所示，在所述發光二極體磊晶層13上接合一第二基 板14。所述第二基板14的材料可以為梦、銘、銅等導電 材料。接合方式可為金屬鍵合或是粘合方式，也可為電 鍍、化學鍍或旋塗等方式。 [0012] ο 如圖5所示，利用研磨的方式去除所述第一基板11。由於 所述研磨阻止層12的硬度大於所述第一基板11的硬度， 因此當研磨完所述苐一基板11到達所述研磨阻止層12時 ，研磨速度會因硬度增加而明顯下降，這樣通過研磨過 程中的適當測量和監控，可以確定停止研磨的合適點。 由於所述研磨阻止層12的存在，能夠有效的保護所述發 光二極體磊晶層13免遭破壞。 如圖6所示，在所述發光二極體磊晶層13上仍然有部分的 所述研磨阻止層12，與所述發光二極體蟲晶層13形成複 合式表面16，當所述研磨阻止層12的材料為透明材料時 099125011 表單編號A0101 第5頁/共17頁 0992043935-0 [0013] 201205856 可以不用去除該層，直接在所述複合式表面16上形成電 極15，形成垂直結構的發光二極體10。 [0014] 如圖7所示，所述發光二極體製造方法中還可進一步利用 幹式或濕式蝕刻方法將所述複合式表面16粗糙化，以提 高發光二極體10的光輸出效率。 [0015] 如圖8所示，在其他實施例裏，也可以採用蝕刻的方法將 所述研磨阻止層12去除，露出所述發光二極體磊晶層13 ，將電極直接鍍在所述發光二極體磊晶層13上，相應的 可進一步將所述發光二極體磊晶層13的表面進行粗糙化 處理，以提高發光二極體10的光輸出效率。 [0016] 所述發光二極體製造方法中由於所述研磨阻止層的移除 速度相對第一基板會急速下降，可精榷的控制研磨深度 ，有效的保護發光二極體磊晶層不受破壞。本方法更有 效應用於大面積晶圓上，可節省製作成本及時間，提高 發光二極體良品率。 [0017] 另外，本領域技術人員還可在本發明精神内做其他變化 ，當然，這些依據本發明精神所做之變化，都應包含在 本發明所要求保護之範圍之内。 【圖式簡單說明】 [0018] 圖1-7是本發明實施方式提供的發光二極體的製造方法的 截面示意圖。 [0019] 圖8是本發明另一實施方式中移除研磨阻止層後再進行表 面粗糙化的發光二極體截面示意圖。 【主要元件符號說明】 099125011 表單編號A0101 第6頁/共17頁 0992043935-0 201205856 [0020] 發光二極體10 [0021] 第一基板11 [0022] 研磨阻止層12 [0023] 發光二極體磊晶層13 [0024] 第二基板14 [0025] 電極15 [0026] 複合式表面16 θ ❹ 099125011 表單編號Α0101 第7頁/共17頁 0992043935-0201205856 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to the field of semiconductors, and more particularly to a method of fabricating a light-emitting diode. [Previous Technology #] [0002] Manufacturing a vertical structure light-emitting diode, usually by growing an epitaxial layer on a sapphire substrate, and then plating or bonding a metal or semiconductor substrate material having good electrical and thermal conductivity. The epitaxial layer is bonded to the epitaxial layer to form a new substrate of the epitaxial layer, and the epitaxial layer and the sapphire substrate are separated by a laser lift-off technique or a polished square method. Due to the application of today's technology to large-area wafers, there are two problems with the laser stripping technology: first, equipment cost and operating cost are high, resulting in increased processing costs; second, laser stripping technology is used to destroy epitaxial crystals due to high energy using laser. The interface between the layer and the sapphire substrate tends to deteriorate the performance of the light-emitting diode, and the generated stress also easily breaks the epitaxial layer. In addition, the size of the laser spot also affects the processing time and is not suitable for large-area wafers. Compared with the above-mentioned laser stripping technology, the physical polishing technology has a relatively low cost and manufacturing time... It does not need to consider the size of the wafer, but in the grinding process, the grinding machine is difficult to distinguish between the substrate and the epitaxial layer. The interface between the two is easily destroyed to the epitaxial layer. SUMMARY OF THE INVENTION [0003] In view of the above, it is necessary to provide a method for fabricating a light-emitting diode having a high yield rate, which can be simultaneously applied to wafers of different sizes. [0004] A method of manufacturing a light-emitting diode, comprising the steps of: providing a first substrate; generating an abrasive blocking layer on the first substrate, the grinding 099125011 Form No. A0101 Page 3 / 17 pages 0992043935- 0 201205856 The hardness of the blocking layer is greater than the hardness of the first substrate; a light emitting diode epitaxial layer is grown on the polishing stop layer; a second substrate is bonded on the LED epitaxial layer; The first substrate is described. [0005] In the manufacturing method of the light-emitting diode, since the removal speed of the polishing stopper layer is rapidly decreased relative to the first substrate, the polishing depth can be accurately controlled, and the epitaxial layer of the light-emitting diode is effectively protected from Destruction, thereby improving the yield of the light-emitting diode. [Embodiment] The present invention will be further described in detail below with reference to the accompanying drawings. [0017] Please refer to FIG. 1-6, a method for manufacturing a light-emitting diode according to an embodiment of the present invention includes the following steps. As shown in FIG. 1, first, a first substrate 11 is provided. The material of the first substrate u may be selected from the group consisting of alumina, tantalum, gallium arsenide, indium phosphide, carbon carbide, sapphire, and the like. [〇_] As shown in FIG. 2, a polishing stopper layer 12 is formed on the first base 11 . The hardness of the abrasion preventing layer 12 is greater than that of the first substrate, which may be a transparent material or an opaque material. Preferably, the abrasive stop layer 12 is a transparent material' which may not need to be removed in subsequent processes. The material of the polishing stopper layer 12 may be selected from one or more of diamond, diamond-like carbon, tantalum carbide, aluminum oxide, quartz, tantalum nitride, hafnium oxide, gallium nitride, aluminum nitride, and indium nitride. the mix of. The polishing stopper layer 12 may be formed on the first substrate 11 by metal organic chemical chemical vapor deposition (M0CVD), plasma enhanced chemical vapor deposition (PECVD), evaporation, sputtering, or the like. . The grinding prevention layer 12 may be an island-shaped dot shape 099125011 Form No. A0101 Page 4 / 17 pages 0992043935-0 201205856 or any form such as a sheet shape and uniformly distributed on the surface of the first substrate u, the remaining gap may be The path of current circulation, in addition, the formation of some bump structures before the growth of the stupid layer can also reduce the epitaxial structure defects. The thickness of the polishing stop layer 12 is about 微米. 7 μm to 2 μm to facilitate the growth of the epitaxial layer 13 of the light-emitting diode next. [0010] As shown in FIG. 3, a light-emitting diode crystal layer 13 is grown on the polishing stopper layer 12. The light emitting diode epitaxial layer 13 has a multilayer composite structure composed of a compound semiconductor. The compound semiconductor includes a group semiconductor and a Π-VI semiconductor. In the current field of photodiodes, the most common are GaN-based materials. As shown in Fig. 4, a second substrate 14 is bonded to the LED epitaxial layer 13. The material of the second substrate 14 may be a conductive material such as dream, inscription, or copper. The bonding method may be metal bonding or bonding, or may be electroplating, electroless plating or spin coating. [0012] As shown in FIG. 5, the first substrate 11 is removed by grinding. Since the hardness of the polishing stopper layer 12 is greater than the hardness of the first substrate 11, when the substrate 11 is polished to reach the polishing stopper layer 12, the polishing speed is significantly lowered due to an increase in hardness, so that Proper measurement and monitoring during the grinding process can determine the appropriate point to stop grinding. Due to the presence of the polishing stop layer 12, the epitaxial layer 13 of the light-emitting diode can be effectively protected from damage. As shown in FIG. 6, a portion of the polishing stop layer 12 is still formed on the LED epitaxial layer 13, and a composite surface 16 is formed with the LED layer 13 when the polishing is performed. When the material of the blocking layer 12 is a transparent material, 099125011, Form No. A0101, Page 5 / Total 17 Page 0992043935-0 [0013] 201205856 The electrode 15 can be formed directly on the composite surface 16 without removing the layer, forming a vertical structure. Light-emitting diode 10. [0014] As shown in FIG. 7, the composite surface 16 may be further roughened by a dry or wet etching method to improve the light output efficiency of the light emitting diode 10. . [0015] As shown in FIG. 8, in other embodiments, the polishing stop layer 12 may be removed by etching to expose the LED epitaxial layer 13 and the electrode is directly plated on the light. On the diode epitaxial layer 13, the surface of the light-emitting diode epitaxial layer 13 can be further roughened to improve the light output efficiency of the light-emitting diode 10. [0016] In the manufacturing method of the light-emitting diode, since the removal speed of the polishing stopper layer is rapidly decreased relative to the first substrate, the polishing depth can be precisely controlled, and the epitaxial layer of the light-emitting diode is effectively protected from damage. The method is more effective for large-area wafers, which can save production cost and time, and improve the yield of light-emitting diodes. In addition, those skilled in the art can make other changes within the spirit of the present invention. Of course, all changes made in accordance with the spirit of the present invention should be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS [0018] FIGS. 1-7 are schematic cross-sectional views showing a method of manufacturing a light-emitting diode according to an embodiment of the present invention. 8 is a schematic cross-sectional view of a light-emitting diode in which surface roughening is performed after removing the polishing stopper layer in another embodiment of the present invention. [Main component symbol description] 099125011 Form No. A0101 Page 6/17 page 0992043935-0 201205856 [0020] Light Emitting Diode 10 [0021] First Substrate 11 [0022] Abrasive Blocking Layer 12 [0023] Light Emitting Diode Epitaxial layer 13 [0024] Second substrate 14 [0025] Electrode 15 [0026] Composite surface 16 θ ❹ 099125011 Form number Α 0101 Page 7 / Total 17 page 0992043935-0