201130398 六、發明說明： 【發明所屬之技術領域】 本發明係關於對被處理體施予依據微波電漿之處理的 微波電漿處理裝置及微波電漿處理方法。 【先前技術】 電漿處理係使用於氮化處理、氧化處理、成膜、蝕刻 等之各種處理，係半導體裝置之製造不可欠缺之技術，近 來，由於要求LSI之高積體化、高速化，構成LSI之半導體 元件之設計規則漸漸微細化，再者，屬於被處理基板之半 導體晶圓大型化，隨此，即使在電漿處理裝置中，也要求 對應於如此之微細化及大型化。 就以可對應於如此要求之電漿處理裝置而言，注目於 RLSA ( Radial L i n e S 1 o t A n t e η n a )微波電漿處理裝置（ 例如，日本特開2 0 0 0 - 2 9 4 5 5 0號公報）。 RLS A微波電漿處理裝置係藉由利用屬於具有多數槽 孔之平面天線的RLSA( Radial Line Slot Antenna:徑向 陣列天線），將微波導入至處理室內而使電漿產生，產生 微波電漿，對載置在腔室內之載置台之狀態的半導體基板 施予電漿處理者。依此，可以以高密度生成低電子溫度之 電漿，並可以執行低損傷且高效率之處理。 在如此之RLS A微波電漿處理裝置中，藉由使安定之 駐波產生而生成電漿，執行氮化處理或氧化處理等之處理 -5- 201130398 然而，在電漿處理中，近來，雖然漸漸嚴格要求半導 體晶圓之平面內之處理之均勻性，但是於上述般使安定之 駐波產生而執行電漿處理之時，因在半徑方向或圓周方向 形成電漿密度之分布，故難以確保所要求之電漿處理之平 面內均勻性。 【發明內容】 本發明之目的係提供可以執行平面內均勻性高之微波 電漿處理之微波電漿處理裝置及微波電漿處理方法》 本發明之另外目的在於提供記憶有實行用以達成上述 微波電漿處理方法之程式的記億媒體。 本發明者爲了達成上述目的進行硏究之結果，觀察到 下述情形。 (1 )微波電漿處理裝置雖然係使安定之駐波產生而 執行電漿處理者，但因駐波依存於微波之功率，以最安定 之整數倍之波長存在，故當功率變化時，則產生電漿密度 不連續性變化之稱爲波模跳變的現象。當在電漿處理中， 產生如此之波模跳變時，因成爲不均勻之電漿處理，故通 常在即使微波功率變動亦不會產生波模跳變之區域執行製 程。但是，因波模跳變出現電漿之密度分布不同之多數波 模的電漿，故藉由積極性利用如此多數波模之電漿，可以 控制電漿處理分布。 (2)波模不同之多數電漿不僅微波之功率，即使藉 由腔室內壓力或氣體流量等之其他處理條件變化，亦可以 -6- 201130398 產生。因此，可以藉由組合使也含有微波之功率之處理條 件變化而所生成之多數波模之電漿，控制電漿處理分布。 (3 )因此，針對多數處理配方，先掌握依據藉此所 生成之電漿之電漿處理分布，從該些處理配方組合取得期 待之電漿處理分布之兩個以上之處理配方而施予電漿處理 則爲有效。 本發明係根據以上之觀察而完成。 即是，若藉由本發明之一個觀點時，則提供一種微波 電漿處理裝置，係藉由微波電漿對被處理體施予電漿處理 之微波電漿處理裝置，其具備：腔室，用以收容被處理體 :微波產生源，用以使微波產生；波導機構，用以將在微 波產生源所產生之微波朝向上述腔室引導；氣體導入部， 用以對上述腔室內，導入用以執行電漿處理之氣體；排氣 口，用以排出上述腔室內之氣體，經排氣管而連接排氣裝 置；和控制部，用以控制處理條件，上述控制部係針對形 成波模互相不同之電漿的多數處理配方，事先記憶依據使 用該些而生成之電漿的電漿處理分布，從上述多數處理配 方，藉由組合選擇取得期待之電漿處理分布之兩個以上之 處理配方，藉由所選擇出之兩個以上之處理配方，對被處 理體執行電漿處理。 若藉由本發明之其他觀點時，則提供一種微波電漿處 理方法，係使用微波電漿處理裝置而對被處理體施予微波 電漿處理之微波電漿處理方法，該微波電漿處理裝置具備 :收容被處理體之腔室；使微波產生之微波產生源；將在 201130398 微波產生源所產生之微波朝向上述腔室引導之波導機構； 對上述腔室內導入用以執行電漿處理之氣體的氣體導入部 :和用以排出上述腔室內之氣體，經排氣管而連接排氣裝 置之排氣口，該微波電漿處理方法包含：針對形成波模互 相不同之電漿的多數處理配方，事先掌握依據使用該些而 所生成之電漿的電漿處理分布；從上述多數處理配方藉由 組合選擇取得期待之電漿處理分布的兩個以上之處理配方 ;和藉由所選擇出之兩個以上之處理配方，對被處理體執 行電漿處理。 若藉由本發明之另一觀點時，則提供一種記憶媒體， 係於電腦中動作，記憶有用以控制微波電漿處理裝置之程 式的記憶媒體，該微波電漿處理裝置具備：收容被處理體 之腔室；使微波產生之微波產生源；將在微波產生源所產 生之微波朝向上述腔室引導之波導機構；對上述腔室內導 入用以執行電漿處理之氣體的氣體導入部；和用以排出上 述腔室內之氣體，經排氣管而連接排氣裝置之排氣口，上 述程式於實行時，係以執行微波電漿處理方法之方式，使 電腦控制上述微波電漿處理裝置，該微波電漿處理方法包 含：針對形成波模互相不同之電漿的多數處理配方，事先 掌握依據使用該些而所生成之電漿的電漿處理分布；從上 述多數處理配方藉由組合選擇取得期待之電漿處理分布的 兩個以上之處理配方；和藉由所選擇出之兩個以上之處理 配方，對被處理體執行電漿處理。 若藉由本發明之另一觀點時，則提供一種微波電漿處 -8 - 201130398 理方法，係使用微波電漿處理裝置而對被處理體施予微波 電漿處理之微波電漿處理方法，該微波電漿處理裝置具備 :收容被處理體之腔室；將微波導入上述腔室內而生成電 漿之微波產生部；對上述腔室內導入用以生成上述電漿之 氣體的氣體導入部；和用以排出上述腔室內之氣體，經排 氣管而連接排氣裝置之排氣口，該微波電漿處理方法包含 生成第1波模之第1電漿，而對被處理體施予第1電漿處理 :和生成與第1波模不同之第2波模之第2電槳，而對上述 被處理體施予第2電漿處理，藉由上述第1電漿處理之電漿 處理分布和上述第2電漿處理之電漿處理分布之組合，取 得期待之電漿處理分布。 【實施方式】 以下，一面參照附件圖面，一面針對本發明之實施型 態予以說明。 在以下之實施形態中’就以微波電漿處理而言’針對 使用RLSA微波電漿處理，並使用半導體晶圓以當作被處 理體，而執行當作電漿處理之電漿氮化處理之時予以說明 。但是，就以微波電漿處理而言’並不限於RLSA微波電 漿處理，即使爲其他之微波電漿處理亦可’並不限於氮化 處理，亦可以適用於氧化處理、触刻處理、化學蒸鍍（ CVD )成膜等之其他處理’被處理體也不限於半導體晶圓 ，亦可適用於FPD用之玻璃基板等之其他被處理體。 第1圖爲表示本發明之一實施型態所涉及之微波電漿 -9 - 201130398 處理裝置之剖面圖。該微波電漿處理裝置係藉由利用屬於 具有多數槽孔之平面天線的RLSA ( Radial Line Slot Antenna :徑向陣列天線），將微波導入至處理室內而使 產生電漿，構成能產生高密度且低電子溫度之微波電漿的 RLSA微波電漿處理裝置。在此，作爲電漿處理例示有執 行電漿氮化處理。 該電漿處理裝置1〇〇具有構成氣密，被接地之略圓筒 狀之腔室1。在腔室1之底壁la之略中央部形成有圓形之開 口部1 〇，在底壁1 a，與該開口部1 0連通，設置有朝向下方 突出之排氣室1 1。 在腔室1內設置有由水平支撐屬於被處理基板之晶圓 W之A1N等之陶瓷所構成之承載器（載置台）2。該載置台 2係藉由從排氣室11之底部中央延伸至上方之圓筒狀之由 A1N等之陶瓷所構成之支撐構件3支撐。在承載器2之外緣 部，設置有用以導引晶圓W之導環4。再者，在承載器2埋 入有電阻加熱型例如Mo、W材般之電阻線之加熱器5，該 加熱器5係藉由自加熱器電源5 a供電，加熱承載器2，以其 熱加熱屬於被處理體之晶圓W。再者，在載置台2插入熱 電偶6，可以將晶圓W之加熱溫度在例如室溫至900 °C之範 圍予以溫度控制。在腔室1之內周，設置有由雜質少之石 英所構成之圓筒狀之襯墊7，防止因腔室構成材料所引起 之金屬污染。再者，在載置台2之外周側，環狀設置石英 製之擋板8，該擋板8係形成有用以均勻排出腔室1內之氣 體的多數孔8a，且該擋板8係藉由金屬製或石英製構件之 -10- 201130398 多數支柱9被支撐。 在承載器2，以能對承載器2表面伸縮之方式’設置有 用以支撐晶圓W並使升降之3根（僅圖示兩根）之晶圓支 撑銷42，該些晶圓支撐銷42係被固定於手臂狀之支撐板 。然後，晶圓支撐銷42係藉由汽缸等之驅動機構44經支撐 板43而升降。 腔室1之側壁設置有構成環狀之氣體導入構件1 5 ’在 該氣體導入構件1 5連接有氣體供給系統1 6。氣體導入構件 即使配置成噴嘴狀或淋浴狀亦可。該氣體供給系統16係具 有例如供給屬於電漿生成氣體之Ar氣體之Ar氣體供給源1 7 及供給處理氣體之N2氣體之N2氣體供給源18，該些氣體各 經氣體配管20而到達至氣體導入構件1 5，從氣體導入構件 15被導入至腔室1內。在氣體配管20之各個設置質量流量 控制器2 1及其前後之開關閥2 2。並且，亦可以使用例如 NH3氣體、％和H2之混合氣體等，以取代上述N2氣體。再 者，即使如後述般，使用其他稀有氣體，例如Kr、He、 Ne、Xe等之氣體以取代Ar氣體亦可，即使混合該些兩個 以上亦可。再者，於電漿氮化處理之時，即使不含有稀有 氣體亦可，此時處理氣體兼作電漿生成氣體。 在上述排氣室1 1之側面形成排氣口 2 3，在排氣口 2 3連 接有排氣管23a，在該排氣管23a連接有含有高速真空泵之 排氣裝置24。藉由使該排氣裝置24動作，腔室1內之氣體 經擋板8而均勻地朝排氣室1 1之空間1 1 a內排出，經排氣管 23被排氣。依此，能夠將腔室1內高速減壓至特定真空度 -11 - 201130398 例如 0.1 3 3 P a ° 在腔室1之側壁，設置有用以在與電漿處理裝置100鄰 接之搬運室（無圖示）之間，執行搬入搬出晶圓W之搬入 搬出口 25，和開關該搬入搬出口 25之閘閥26。 腔室1之上部成爲開口部，在腔室1之上端部之上，在 經密封構件29a而被氣密密封之狀態下設置平板2 7。該平 板27構成環狀，沿著其內周形成有突出於內側之環狀之支 撐部273。在該支撐部273係由例如石英或八1203、八1?^等之 陶瓷般之絕緣體（介電體）所構成，透過微波之微波透過 板28係經密封構件29b而在氣密之狀態下被支撐。因此， 腔室1之上部之開口部，係藉由平板27及微波透過板28而 在氣密之狀態下被封閉，腔室1內係被氣密保持。 在微波透過板28之上方，係以與承載器2對向之方式 ，設置有圓板狀之平面天線31。該平面天線31被卡止在腔 室1之側壁上端。平面天線31具有較微波透過板稍微大之 直徑，爲例如表面被鍍銀或鍍金之由銅或鋁或Ni所構成之 圓板，成爲以特定圖案而形成貫通多數微波放射孔32 (槽 孔）之構成。 該微波放射孔32係例如第2圖所示般，形成長形狀者 係構成對，典型上，構成對之微波放射孔32彼此被配置成 「T」字狀，該些對被配置成多數、同心圓狀。槽孔32之 長度或配列間隔係因應微波之波長（λ g )而被決定，例 如微波放射孔3 2之間隔係被配置成λ g/4〜λ g。並且，在 第2圖中，以△ r表示形成同心圓之鄰接的槽孔3 2彼此之間 -12- 201130398 隔。再者，槽孔3 2即使爲圓形狀、圓弧狀等之其他形狀亦 可。並且，槽孔3 2之配置形態並不特別限定，除同心圓狀 之外，例如亦可以配置成螺旋狀、放射狀等。 在該平面天線31之上面設置有具有大於真空之介電率 的慢波材3 3，被設置成至少覆蓋平面天線3 1之槽孔形成部 分之全部。慢波材3 3係可以以例如石英、陶瓷、氟系樹脂 或聚醯亞胺般之樹脂等形成。該慢波材3 3由於在真空中微 波之波長變長，故具有縮短微波之波長而調整電漿之功能 。並且，在平面天線3 1和微波透過板2 8之間，及慢波材3 3 和平面天線3 1之間，雖然係密接配置，但即使間隔開亦可 〇 在腔室1之上面，以覆蓋該些平面天線3 1及慢波材3 3 之方式，設置有蓋構件3 4，該蓋構件3 4具有例如鋁或不銹 鋼、銅等之金屬材所構成之波導管功能。腔室1之上面和 蓋構件34係藉由密封構件35而被密封。在蓋構件34形成有 冷卻水流路34a，藉由使冷卻水流通於此，冷卻蓋構件34 、慢波材3 3、平面天線3 1、微波透過板2 8，而防止該些破 損、變形。並且，平面天線3 1及蓋構件3 4被接地。 在蓋構件3 4之上壁之中央，形成有開口部3 6，在該開 口部36連接有導波管37。在該導波管37之端部，經阻抗匹 配部（調諧器）38連接構成微波產生源之微波產生裝置39 。依此，在微波產生裝置39產生之例如頻率2.45GHz之微 波經構成波導路之波導管3 7而被傳送至上述平面天線3 1。 並且，就以微波之頻率而言，亦可以使用8.35GHz、 -13- 201130398 1.98GHz 等。 導波管37具有從上述蓋構件34之開口部36延伸至上方 之剖面圓形狀之同軸導波管37a，和經模式轉換器40連接 於該同軸導波管37a之上端部之延伸於水平方向之矩形波 導管37b »矩形波導管37b和同軸波導管37 a之間之模式轉 換器40具有將以TE模式在矩形波導管3 7b內傳播之微波轉 換成TEM模式之功能。在同軸波導管3 7a之中心延伸存在 有內導體41，該內導體41之下端部係被連接固定於平面天 線3 1之中心。依此，微波係經同軸波導管3 7a之內導體4 1 而均勻且效率佳地朝平面天線3 1傳播，自平面天線3 1之微 波放射孔32透過微波透過板28而被放射至腔室1內。 並且，構成波導路之波導管37、平面天線31、微波透 過板28係當作將在構成微波產生源之微波產生裝置3 9產生 之微波引導至腔室1內之波導機構而發揮功能。 微波電漿處理裝置10 0之各構成部係連接於控制部50 而被控制。控制部50係由電腦構成，如第3圖所示般，具 備有擁有微處理器之製程控制器5 1、連接於該製程控制器 之使用者介面52及記憶部53。 製程控制器5 1係在電漿處理裝置1 00中，以溫度、壓 力、氣體流量、微波輸出、偏壓施加用之高頻電力等之製 程條件成爲期待値之方式，控制各構成部，例如加熱器電 源5a、氣體供給系統16、排氣裝置24、微波產生裝置39等 〇 使用者介面52具有操作員爲了管理電漿處理裝置100 -14- 201130398 執行指令之輸入操作等之鍵盤，或使電漿處理裝置1 〇〇之 運轉狀況可觀視而予以顯示之顯示器等。再者，記億部5 3 係存儲有用以在製程控制器5 1之控制下實現以電漿處理裝 置1 〇〇所實行之各種處理，或用以依照處理條件使電漿處 理裝置100之各構成部實行處理之程式即是處理配方。 控制程式或處理配方係被記憶於記憶部5 3之中之記憶 媒體（無圖示）。記憶媒體即使爲硬碟或半導體記億體亦 可，即使爲CD ROM、DVD、快閃記憶體等之可搬運性者 亦可。再者，即使自其他裝置經例如專用迴線適當傳送處 理配方，以代替先記憶於記憶媒體亦可。 然後，依其所需，以來自使用者介面5 2之指示等自記 憶部5 3叫出任意處理配方，使製程控制器5 1實行，依此， 在製程控制器5 1之控制下，執行電漿處理裝置1 00之期待 的處理。 在本實施形態中，於控制部50之記憶部53記憶有多數 處理配方。該些多數配方係形成波模互相不同之電漿者， 也在記憶部5 3事先記憶藉由各處理配方所生成之電漿的電 漿處理分布，控制成從該些多數處理配方，藉由組合選擇 取得期待之電漿密度分布之兩個以上之處理配方，藉由所 選擇出之兩個以上之處理配方，對晶圓W執行電漿處理。 形成如此波模不同之電漿的多數處理配方，係藉由使例如 用以執行電漿處理之氣體流量、微波之功率及腔室1內之 壓力之至少一個不同而被準備。 在如此構成之RLS A方式之電漿處理裝置100中，首先 -15- 201130398 ，在藉由加熱器5將承載器2之溫度加熱至例如250〜8 00 °C 之狀態下，打開閘閥26而從搬入搬出口 25將晶圓W搬入至 腔室1內，載置在承載器2上。 然後，以500〜2000mL/min ( seem )之流量導入Ar氣 體，並將腔室1內之壓力調整成66·7〜667Pa(0.5〜5Torr )，在其狀態下，以功率1000〜4000W、功率密度0.51〜 2.1W/cm2導入微波而點燃電漿。 電漿點燃係藉由開啓微波產生裝置39，將在此產生之 微波經阻抗匹配部（調諧器）3 8而引導至波導管3 7，依序 通過矩形波導管37b、模式轉換器40及同軸波導管37a，經 內導體4 1而供給至平面天線3 1，並且自平面天線3 1之微波 放射孔32經微波透過板28而放射至腔室1內之晶圓W之上 方空間，激勵被供給至腔室1內之Ar氣體而執行。此時， 微波係在矩形波導管37b內以TE模式傳播，該TE模式之微 波係在模式轉換器40被轉換成TEM模式，將同軸波導管 37a內朝向平面天線31傳播。藉由從平面天線31經微波透 過板28被放射至腔室1之微波，在腔室1內形成電磁場，激 勵Ar氣體而予以電漿化。 於點燃電漿之後，將N2氣體導入至腔室1內，並將N2 予以電漿化（激勵），藉由其電漿對晶圓W執行電漿氮化 處理。 以往，於執行如此之電漿氮化處理之時，雖然使用單 一之處理配方，使安定之駐波產生而生成電漿，但是於產 生駐波之時，有時在半徑方向形成電漿密度分布，有時在 -16- 201130398 圓周方向方向形成電漿密度分布，難以確保良好之電漿處 理之平面內均勻性。 例如，第4圖A、第4圖B之中任一者皆將平面天線之 微波放射孔設成第5圖所示之八字型而成爲容易產生電漿 密度分布之狀態，表示以2.45GHz放射400W之微波之時之 電漿之發光狀態（亮部分爲電漿度高，暗部分爲電漿密度 低），第4圖A爲將腔室內之壓力設爲1 4 0 P a之情形，第4 圖B爲將壓力設爲20Pa之情形。由該些圖可知壓力爲140Pa 之時和2 0 P a之時明顯電漿之波模不同，電漿密度分布皆不 均勻。 第4圖A、第4圖B係表示由於處理條件不同，產生波 模跳變而生成波模不同之電漿，在本實施型態中，藉由積 極性利用如此之波模跳變，可以取得期待之電漿處理分布 ，即是均勻之氮化處理分布（氮濃度分布）。 波模跳變係指於使電漿生成條件變化之時電漿之波模 突發性變化之現象。具體而言，例如第6圖所示般，於使 微波之功率變化之時，產生跳變，電漿之狀態（在此電漿 密度）變成台階狀（階段狀）。然後，產生波模跳變之部 分之間的平坦部分，爲相同之電漿波模，成爲可以執行安 定之處理的區域。波模跳變不僅微波之功率，即使使腔室 內之壓力或氣體流量等之其他條件變化亦產生，藉由適當 變化該些處理條件（即是使處理配方變化），可以取得具 有不同之電漿密度分布之多數電漿波模。 因此，在本實施形態中’於該電漿氮化處理之時’以 -17- 201130398 可實施平面內均勻性高之電漿氮化處理之方式，從記憶於 記億部53之形成波模互相不同之電漿的多數處理配方，藉 由組合選擇期待之典型上取得均勻之電漿處理分布之兩個 以上之處理配方，藉由所選擇出之兩個以上之處理配方， 對晶圓W執行電漿處理。 即是，以往係以一個處理配方所形成之電漿進行電漿 氮化處理，雖然產生平面內均勻性低之情形，但是即使在 如此之情形下，藉由組合生成波模不同之電漿的其他處理 配方，可以執行平面內均勻性高之電漿處理。 表示具體例。於以腔室1內之壓力：3 0Pa(225mTorr )、Ar氣體之流量：1 OOOmL/min ( s.ccm ) 、N2氣體流量 :100mL/min(sccm)、微波功率：1500W、溫度：400°C 之條件之處理配方A，執行電漿氮化處理38sec之時，電漿 密度成爲中心低周邊高之谷型分布，於以如此之電漿波模 執行氮化處理之時，則如第7圖所示般，成爲對應於電漿 密度之谷型氮濃度分布（圖中之+表示濃度高，數字越大 表示濃度越高，-濃度表示濃度低，數字越大表示濃度越 低。以下相同）。此時之氮濃度之平均値（Ave.)爲 1 4.1 %，σ /Av e .爲2.4 6 %之均勻性差的結果。再者，於以 腔室1內之壓力：30Pa ( 225mTorr ) 、Ar氣體之流量： 1000mL/min ( seem) 、N2 氣體流量：l〇〇mL/min ( seem) 、微波功率：1 800W、溫度：400°C之條件之處理配方B， 係從上述處理配方A產生波模跳變而成爲不同之電漿波模 ，於以該處理配方B執行電漿氮化處理36sec之時，電漿密 -18- 201130398 度成爲中心高周邊低之山型分布，於以如此之電漿波模執 行氮化處理之時，則如第8圖所不般，成爲對應於電獎密 度之山型之氮濃度分布。此時之氮濃度之平均値（A ve.) 爲1 4.7 %，σ /A v e .爲3 . 1 0 %之均句性差的結果。 對此，藉由組合該些處理配方A和處理配方B，可以 執行平面內均勻性高之電漿處理，可以提高氮濃度之平面 內均勻性。實際上，於以處理配方A處理27sec間之後，將 微波功率上升至1800W，以處理配方B處理9sec間之結果 ，則如第9圖所示般，成爲山或谷無法明確看出之氮濃度 分布，達成如氮濃度之平均値（Ave〇爲14.30%，σ / Α ν e.爲0 · 7 2 %，σ / A v e _爲低於1 . 0 %之高平面內均勻性。 如此一來，藉由事先掌握依據特定處理配方的電漿之 波模，可以組合兩個以上之處理配方而形成期待之電漿處 理分布，並可以使電漿氮化處理之平面內均勻性成爲良好 。並且，與上述處理配方A、B相同，由於確認出於腔室1 內之壓力：30Pa ( 22 5mTorr ) ' Ar氣體之流量： 1000mL/min ( seem) 、Ν】氣體流量：l〇〇mL/min ( seem) 、溫度：400°C之時，微波功率若爲500〜1 600W (功率密 度：0.2 5〜0.8 5 W/cm2)時，則成爲爲谷型之電漿密度分 布之電漿波模，藉由該電漿波模執行氮化處理，可取得谷 型之氮化處理平面內分布，另外，微波功率若爲1700〜 4000W (功率密度：0.86〜2.1 W/cm2 )時，則成爲山型之 電漿密度分布之電漿波模，藉由該電漿波模執行氮化處理 ，可取得山型之氮化處理平面內分布，故組合從電漿處理 -19- 201130398 分布成爲谷型之條件及成爲山型之條件之中各適當選擇出 之條件的處理配方，依此可以執行平面內均勻性高之電漿 氮化處理。 以上，爲使微波功率變化而使電漿波模變化之時之具 體例，以下表示使腔室1內之壓力、Ar氣體流量、N2氣體 流量變化之具體例。 首先，固定於Ar氣體之流量：l〇〇〇mL/min(sccm) 、N2氣體流量：200mL/min ( seem)、微波功率：1 8 5 0W ，溫度：400 °C ，將腔室1內之壓力變化成20Pa、30Pa、 40Pa、5 0Pa、66.66Pa，使電漿波模變化而執行電漿氮化 處理。此時之氮濃度之分布係成爲第10圖般，可以藉由電 漿波模，氮濃度之分布變化大。因此，若適當組合該些電 漿波模時，則可以更縮小氮濃度分布（電漿處理分布）之 偏差。 接著，固定成腔室內壓力：40Pa( 3 0 0mT〇rr ) 、N2氣 體流量：200mL/min ( seem ) '微波功率：1 8 5 0W，溫度 ：4 0 0 °C，將 Ar 氣體流量變化成 500mL/min ( seem)、 1000mL/min (seem) 、2000mL/min (seem)，使電發波 模變化而執行電漿氮化處理。此時之氮濃度之分布係成爲 第11圖般，可以藉由電漿波模，氮濃度之分布變化大。因 此，若適當組合該些電漿波模時，則可以更縮小氮濃度分 布（電漿處理分布）之偏差。 接著，固定成腔室內壓力：40Pa( 3 00mT〇rr ) 、Ar氣 體流量：l〇〇〇mL/min(sccm)、微波功率：1850W，處理 -20- 201130398 溫度· 400C ’將N2氣體流量變化成20mL/min(sccm)、 4 0 m L / m i n ( seem ) 、1 OOmL/min ( seem ) 、200mL/min ( seem ) 、400m L/min ( seem )，使電漿波模變化而執行電 漿氮化處理。此時之氮濃度之分布係成爲第1 2圖般，可知 可以藉由電漿波模，氮濃度之分布變化大。因此，若適當 組合該些電漿波模時，則可以更縮小氮濃度分布（電漿處 理分布）之偏差。 並且，上述具體例，雖然使製程條件一個一個變化而 變化電漿波模，但是即使使兩個條件變化，當然也可以使 波模變化。 組合兩個以上之處理配方，若以兩個以上之處理配方 分配電漿氮化處理之全處理時間即可，其分配方法爲任意 。例如，於組合兩個處理配方之時，即使以一方處理配方 處理前半，以另一方之處理配方處理後半亦可，即使多次 交互執行兩個處理配方之處理亦可。再者，藉由使兩個以 上之處理配方之各個處理時間變化，亦可以控制電漿處理 分布。該兩個以上之處理配方之分配控制係藉由控制部5 0 而執行。 電漿之波模變更可以藉由使腔室內之壓力、氣體流量 、微波之功率之至少一個變化來執行，因此，形成波模不 同之電漿之多數處理配方，若藉由使用以執行電漿處理之 氣體之流量、微波之功率及腔室內之壓力之至少一個不同 而準備即可，但是從在短時間變更電漿之波模之觀點來看 ，以使微波功率變化爲佳。在實際之裝置中，爲了藉由微 -21 - 201130398 波功率變更電漿波模，在波模跳變之前後，阻抗匹配部（ 調諧部）3 8必須取得將反射波設爲最小之同步，因此需要 大約2sec左右之時間。因此，處理配方之變更跨距爲5sec 以上爲佳。 在本實施形態中，就以執行電漿氮化處理之時之最佳 條件而言，可以舉出腔室內壓力：6.66〜666Pa(0.05〜 5 To rr ) Ar 氣體流量：500 〜2000mL/min(sccm) 、N2 氣體 流量：5〜200mL/min(sccm)、晶圓W之溫度：250〜500 °C 、微波之功率：500〜4000W (功率密度：0.25〜 2.1 W/cm2 )，以在該些範圍內，使用微波功率、腔室內壓 力、氬氣體之流量等之處理條件不同之兩個以上之處理配 方爲佳。 如此一來，結束氮化處理之後，關閉電漿，之後停止 氮氣體，從無圖示之沖洗氣體供給系統對腔室1內供給沖 洗氣體而執行腔室1內之沖洗，接著，打開閘閥26而從搬 入搬出口 25搬出晶圓W。 本實施形態係針對多數處理配方，事先記憶形成電漿 時的電漿處理分布，從上述多數處理配方，藉由組合選擇 取得期待之電漿處理分布之兩個以上之處理配方，藉由所 選擇出之兩個以上之處理配方，對被處理體亦即晶圓W執 行電漿氮化處理，可以執行平面內均勻性（N濃度或膜厚 )良好的電漿氮化處理。具體而言，將以往之電漿處理分 布（屬於被處理體之晶圓之平面內之處理之偏差的氮濃度 之偏差（σ )除以處理平均値（氮濃度之平均値）之値爲 -22- 201130398 數％左右，在本實施形態中可以設爲1 %以下。 再者，因如此自平面天線3 1之多數微波放射孔32放射 微波而形成微波電漿，故成爲大略lxl〇IQ〜5xl〇12/cm3之 高密度，並且以在晶圓W附近成爲0.7〜1.2eV以下之低電 子溫度電漿，可以實現離子對以自由基爲主體之基底造成 損傷較少之電漿氮化處理。 如此一來，針對多數處理配方事先記憶電漿處理分布 ，從上述多數處理配方，藉由組合選擇取得期待之電漿處 理分布之兩個以上之處理配方，藉由所選擇出之兩個以上 之處理配方，對被處理體例如晶圓執行電漿處理，依此可 以取得任意電漿處理分布，並可以執行典型上平面內均勻 性良好之微波電漿處理。然後，藉由如此執行微波電漿處 理，可以取得將被處理體之平面內的處理偏差（σ )除以 處理之平均値爲1 %以下之平面內均勻性。 並且，本發明並限定於上述實施型態，在本發明之思 想範圍內做各種變形。 例如，本發明係如上述般，適用於氧化處理，此時， 可以使用〇2氣體、Ν02氣體等之含氧氣體和稀有氣體以當 作處理氣體來執行處理。 【圖式簡單說明】 第1圖爲表示本發明之一實施型態所涉及之微波電漿 處理裝置之剖面圖。 第2圖爲表示第1圖之電漿處理裝置之平面天線構件之 -23- 201130398 構造的圖面。 第3圖爲表示第1圖之裝置之控制部之槪略構成的方塊 圖。 第4圖A爲表示將腔室內之壓力設爲14 OP a，使用第5 圖之平面天線而以2.45GH照射400W之微波而所形成之電 漿之發光狀態的照片。 第4圖B爲表示將腔室內之壓力設爲20Pa，使用第5圖 之平面天線而以2.45 GH照射400 W之微波而所形成之電漿 之發光狀態的照片。 第5圖爲用以說明生成第4圖之電漿之時之平面天線之 微波放射孔之圖示。 第6圖爲用以說明波模跳變之圖式。 第7圖爲表示藉由使用微波功率爲1 5 00W之處理配方 而生成之電漿，施予電漿氮化處理而取得谷型之氮濃度分 布之例的圖示。 第8圖爲表示藉由使用微波功率爲1 800W之處理配方 而生成之電漿，施予電漿氮化處理而取得山型之氮濃度分 布之例的圖示。 第9圖表示使用取得第7圖之氮濃度分布之配方，和取 得第8圖之氮濃度分布之配方之雙方，而執行電漿氮化處 理之時之氮濃度分布之圖示。 第10圖爲使腔室內壓力變化而施予電漿氮化處理之時 之氮濃度分布的圖示。 第1 1圖爲使Ar氣體流量變化而施予電漿氮化處理之時 -24- 201130398 之氮濃度分布的圖示。 第1 2圖爲使N2氣體流量變化而施予電漿氮化處理之時 之氮濃度分布的圖示。 【主要元件符號說明】 1 :腔室 1 a :底壁 2 :承載器 3 :支撐構件 4 :導環 5 :加熱器 5 a :加熱器電源 6 :熱電偶 7 :襯墊 8 :擋板 8 a :孔 9 :支柱 1 〇 :開口部 1 1 :排氣室 1 1 a :空間 1 5 :氣體導入構件 1 6 :氣體供給系統 17 : Ar氣體供給源 18 : N2氣體供給源 -25- 201130398 20 :氣體配管 2 1 :質量流量控制器 22 :開關閥 2 3 :排氣口 2 3 a :排氣管 24 :排氣裝置 25 :搬入搬出口 26 :閘閥 27 :平板 27a :支撐部 2 8 :微波透過板 2 9 a :密封構件 2 9b :密封構件 3 1 :平面天線 3 2 :微波放射孔 3 3 :慢波材 3 4 :蓋構件 34a :冷卻水流路 3 5 :密封構件 3 6 :開口部 37 :波導管 37a :同軸波導管 37b :矩形波導管 3 8 :阻抗匹配部 -26- 201130398 3 9 :微波產生裝置 40 :模式轉換器 4 1 :內導體 5 0 :控制部 5 1 :製程控制器 5 2 :使用者介面 5 3 :記憶部 100 :微波電漿處理裝置 -27-201130398 VI. Description of the Invention: [Technical Field] The present invention relates to a microwave plasma processing apparatus and a microwave plasma processing method for applying a treatment according to microwave plasma to a target object. [Prior Art] The plasma treatment is used in various processes such as nitriding treatment, oxidation treatment, film formation, and etching, and is a technique that is indispensable for the manufacture of semiconductor devices. Recently, LSI has been required to be highly integrated and high-speed. The design rule of the semiconductor element constituting the LSI is gradually miniaturized, and the size of the semiconductor wafer belonging to the substrate to be processed is increased. Accordingly, even in the plasma processing apparatus, it is required to be finer and larger. In the case of a plasma processing apparatus which can correspond to such a requirement, attention is paid to the RLSA (radiial L ine S 1 ot A nte η na ) microwave plasma processing apparatus (for example, Japanese Patent Laid-Open No. 2 0 0 0 - 2 9 4 5 Bulletin No. 5 0). The RLS A microwave plasma processing apparatus generates microwave plasma by introducing microwave into the processing chamber by using a RLSA (radiial line Slot Antenna) belonging to a planar antenna having a plurality of slots. The plasma substrate is applied to the semiconductor substrate placed on the mounting table in the chamber. According to this, it is possible to generate a plasma having a low electron temperature at a high density, and it is possible to perform a treatment with low damage and high efficiency. In such an RLS A microwave plasma processing apparatus, a plasma is generated by generating a standing wave of stability, and a treatment such as nitriding treatment or oxidation treatment is performed. 5-201130398 However, in plasma processing, recently, although The uniformity of the processing in the plane of the semiconductor wafer is gradually required. However, when the standing wave is generated and the plasma treatment is performed as described above, it is difficult to ensure the distribution of the plasma density in the radial direction or the circumferential direction. The in-plane uniformity of the plasma treatment required. SUMMARY OF THE INVENTION The object of the present invention is to provide a microwave plasma processing apparatus and a microwave plasma processing method capable of performing microwave plasma processing with high in-plane uniformity. The additional object of the present invention is to provide memory for achieving the above microwave. The program of the plasma processing method is remembered by the media. The inventors of the present invention conducted the following studies in order to achieve the above object, and observed the following. (1) Although the microwave plasma processing apparatus performs the plasma processing by generating the standing wave of the stability, the standing wave depends on the power of the microwave, and exists at the wavelength which is an integer multiple of the most stable, so when the power changes, A phenomenon called a mode transition that produces a change in plasma density discontinuity. When such a mode jump occurs in the plasma processing, since the plasma processing becomes uneven, the process is usually performed in an area where the mode jump does not occur even if the microwave power fluctuates. However, since the mode pulsing occurs in the plasma of most of the modes in which the density distribution of the plasma is different, the plasma processing distribution can be controlled by actively utilizing the plasma of such a majority of the modes. (2) Most of the plasmas with different modes are not only the power of the microwave, but also can be generated by -6-201130398 even if other processing conditions such as pressure in the chamber or gas flow change. Therefore, the plasma processing distribution can be controlled by combining the plasma of a plurality of modes generated by changing the processing conditions of the power including the microwave. (3) Therefore, for most processing formulations, the plasma processing distribution based on the plasma generated thereby is grasped, and two or more processing recipes of the desired plasma processing distribution are obtained from the processing recipe combinations to be applied. Slurry treatment is effective. The present invention has been completed on the basis of the above observations. That is, according to one aspect of the present invention, there is provided a microwave plasma processing apparatus which is a microwave plasma processing apparatus which applies a plasma treatment to a workpiece by microwave plasma, and comprises: a chamber, Storing a processed object: a microwave generating source for generating microwaves; a waveguide mechanism for guiding microwaves generated by the microwave generating source toward the chamber; and a gas introducing portion for introducing into the chamber a gas for performing plasma treatment; an exhaust port for exhausting gas in the chamber, connecting an exhaust device via an exhaust pipe; and a control portion for controlling processing conditions, wherein the control portion is different for forming a wave mode The majority of the treatment formula of the plasma, in advance, according to the plasma treatment distribution of the plasma generated by using the above, from the above-mentioned majority of the treatment formula, by selecting and selecting two or more treatment recipes of the desired plasma treatment distribution, The plasma treatment is performed on the object to be processed by the selected two or more treatment recipes. According to another aspect of the present invention, a microwave plasma processing method is provided, which is a microwave plasma processing method for applying a microwave plasma treatment to a processed object using a microwave plasma processing apparatus, the microwave plasma processing apparatus having a chamber for accommodating the object to be processed; a microwave generating source for generating microwaves; a waveguide mechanism for guiding microwaves generated by the microwave generating source toward the chamber at 201130398; introducing a gas for performing plasma processing into the chamber a gas introduction portion: and an exhaust port for exhausting the gas in the chamber through the exhaust pipe, the microwave plasma processing method comprising: a plurality of processing recipes for forming plasmas different in wave modes from each other, Mastering the plasma processing distribution of the plasma generated according to the use of the plurality of processing recipes; obtaining more than two processing recipes of the desired plasma processing distribution by combining the plurality of processing recipes; and selecting the two More than one treatment formula, the plasma treatment is performed on the object to be treated. According to another aspect of the present invention, a memory medium is provided which operates in a computer and memorizes a memory medium for controlling a program of the microwave plasma processing apparatus, the microwave plasma processing apparatus having: a housing for receiving a processed object a chamber for generating microwaves for generating microwaves; a waveguide mechanism for guiding microwaves generated by the microwave generating source toward the chamber; a gas introduction portion for introducing a gas for performing plasma treatment into the chamber; Discharging the gas in the chamber and connecting the exhaust port of the exhaust device through the exhaust pipe. When the program is executed, the microwave plasma processing device is controlled by the computer to perform the microwave plasma processing device. The plasma processing method comprises: for a majority of processing recipes for forming plasmas having mutually different wave modes, preliminarily grasping a plasma processing distribution according to the plasma generated using the plurality of processing; obtaining a desired result from the plurality of processing recipes by combination selection Two or more treatment recipes for plasma treatment distribution; and by being treated with more than two treatment formulas selected The body performs plasma processing. According to another aspect of the present invention, a microwave plasma processing method is provided, which is a microwave plasma processing method for applying a microwave plasma treatment to a processed object by using a microwave plasma processing apparatus. The microwave plasma processing apparatus includes: a chamber that houses the object to be processed; a microwave generating unit that introduces microwaves into the chamber to generate plasma; and a gas introduction unit that introduces a gas for generating the plasma into the chamber; The gas discharged from the chamber is connected to an exhaust port of the exhaust device via an exhaust pipe, and the microwave plasma processing method includes generating a first plasma of the first mode and applying a first electric charge to the object to be processed. Slurry treatment: a second electric paddle that generates a second wave mode different from the first wave mode, and a second plasma treatment applied to the object to be processed, and the plasma treatment distribution by the first plasma treatment The combination of the plasma treatment distributions of the second plasma treatment described above achieves the desired plasma treatment distribution. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to an attached drawing. In the following embodiments, 'in the case of microwave plasma processing, 'for the use of RLSA microwave plasma treatment, and using a semiconductor wafer as a processed body, performing plasma nitriding treatment as a plasma treatment. It will be explained. However, in the case of microwave plasma treatment, it is not limited to RLSA microwave plasma treatment, even for other microwave plasma treatments, it is not limited to nitriding treatment, and can also be applied to oxidation treatment, etch processing, and chemistry. Other treatments such as vapor deposition (CVD) film formation are not limited to semiconductor wafers, and may be applied to other objects to be processed such as glass substrates for FPD. Fig. 1 is a cross-sectional view showing a microwave plasma -9 - 201130398 processing apparatus according to an embodiment of the present invention. The microwave plasma processing apparatus generates a plasma by introducing a microwave into a processing chamber by using an RLSA (radiar line array antenna) belonging to a planar antenna having a plurality of slots, thereby generating a high density and RLSA microwave plasma processing unit for microwave plasma with low electron temperature. Here, as a plasma treatment, a plasma nitriding treatment is performed. The plasma processing apparatus 1 has a chamber 1 which is airtight and is grounded in a substantially cylindrical shape. A circular opening portion 1 is formed at a substantially central portion of the bottom wall 1a of the chamber 1, and the bottom wall 1a communicates with the opening portion 10, and an exhaust chamber 1 1 that protrudes downward is provided. A carrier (mounting stage) 2 made of a ceramic such as A1N that horizontally supports the wafer W belonging to the substrate to be processed is provided in the chamber 1. The mounting table 2 is supported by a support member 3 made of a ceramic such as A1N extending from the center of the bottom of the exhaust chamber 11 to the upper side. At the outer edge of the carrier 2, a guide ring 4 for guiding the wafer W is provided. Further, a heater 5 having a resistance heating type such as a Mo, W-like resistance wire is embedded in the carrier 2, and the heater 5 is heated by the heater power supply 5 a to heat the carrier 2 with its heat. The wafer W belonging to the object to be processed is heated. Further, by inserting the thermocouple 6 on the mounting table 2, the heating temperature of the wafer W can be temperature-controlled, for example, from room temperature to 900 °C. On the inner circumference of the chamber 1, a cylindrical gasket 7 made of quartz having a small amount of impurities is provided to prevent metal contamination due to the material constituting the chamber. Further, on the outer peripheral side of the mounting table 2, a quartz baffle 8 is formed in a ring shape, and the baffle 8 forms a plurality of holes 8a for uniformly discharging the gas in the chamber 1, and the baffle 8 is formed by Metal or quartz components-10-201130398 Most of the pillars 9 are supported. In the carrier 2, a wafer support pin 42 for supporting and supporting the wafer W and lifting (only two) is provided in a manner capable of expanding and contracting the surface of the carrier 2, and the wafer support pins 42 It is fixed to the arm-shaped support plate. Then, the wafer support pin 42 is lifted and lowered by the drive mechanism 44 such as a cylinder via the support plate 43. The side wall of the chamber 1 is provided with a gas introduction member 15' which is formed in a ring shape, and a gas supply system 16 is connected to the gas introduction member 15. The gas introduction member may be arranged in a nozzle shape or a shower shape. The gas supply system 16 includes, for example, an Ar gas supply source 17 that supplies an Ar gas belonging to a plasma generation gas, and an N2 gas supply source 18 that supplies N2 gas of a process gas, each of which reaches the gas via the gas pipe 20. The introduction member 15 is introduced into the chamber 1 from the gas introduction member 15. The mass flow controller 2 1 and its front and rear opening and closing valves 22 are disposed in each of the gas pipes 20. Further, for example, NH3 gas, a mixed gas of % and H2, or the like may be used instead of the above N2 gas. Further, even if a gas such as Kr, He, Ne, or Xe is used instead of the Ar gas, as described later, the two or more gases may be mixed. Further, at the time of plasma nitriding treatment, even if a rare gas is not contained, the processing gas also serves as a plasma generating gas. An exhaust port 2 3 is formed on the side surface of the exhaust chamber 1 1 , an exhaust pipe 23 a is connected to the exhaust port 23 , and an exhaust device 24 including a high-speed vacuum pump is connected to the exhaust pipe 23 a. By operating the exhaust device 24, the gas in the chamber 1 is uniformly discharged into the space 11a of the exhaust chamber 1 through the baffle 8, and is exhausted through the exhaust pipe 23. According to this, the chamber 1 can be decompressed at a high speed to a specific degree of vacuum -11 - 201130398, for example, 0. 1 3 3 P a ° The side wall of the chamber 1 is provided with a transfer chamber 25 for loading and unloading the wafer W between the transfer chamber (not shown) adjacent to the plasma processing apparatus 100, and a switch The gate valve 26 is moved into the outlet 25. The upper portion of the chamber 1 serves as an opening portion, and on the upper end portion of the chamber 1, a flat plate 27 is provided in a state of being hermetically sealed by a sealing member 29a. The flat plate 27 is formed in an annular shape, and an annular support portion 273 projecting from the inner side is formed along the inner circumference thereof. The support portion 273 is made of a ceramic-like insulator (dielectric) such as quartz or octa 1203 or octagonal, and the microwave-transmitting plate 28 that transmits the microwave passes through the sealing member 29b in an airtight state. Be supported. Therefore, the opening portion of the upper portion of the chamber 1 is closed in an airtight state by the flat plate 27 and the microwave transmitting plate 28, and the inside of the chamber 1 is hermetically held. Above the microwave transmitting plate 28, a disk-shaped planar antenna 31 is provided in such a manner as to face the carrier 2. The planar antenna 31 is locked at the upper end of the side wall of the chamber 1. The planar antenna 31 has a diameter slightly larger than that of the microwave transmitting plate, and is, for example, a disk made of copper or aluminum or Ni which is plated with silver or gold, and formed into a plurality of microwave radiation holes 32 (slots) in a specific pattern. The composition. The microwave radiation holes 32 are formed in a long shape as shown in Fig. 2, and typically, the pair of microwave radiation holes 32 are arranged in a "T" shape, and the pairs are arranged in a plurality of Concentric. The length or arrangement interval of the slots 32 is determined by the wavelength (λ g ) of the microwave. For example, the interval of the microwave radiating holes 32 is configured to be λ g / 4 λ λ g . Further, in Fig. 2, Δr is used to indicate that the adjacent slots 3 2 forming concentric circles are separated by -12-201130398. Further, the slot 3 2 may have other shapes such as a circular shape or an arc shape. Further, the arrangement of the slits 3 2 is not particularly limited, and may be arranged in a spiral shape, a radial shape, or the like, in addition to concentric shapes. Above the planar antenna 31, a slow wave material 33 having a dielectric constant larger than vacuum is provided, and is disposed to cover at least all of the slot forming portions of the planar antenna 31. The slow wave material 3 3 can be formed of, for example, quartz, ceramic, fluorine-based resin or polyimide-like resin. Since the slow wave material 33 has a long wavelength of the microwave in the vacuum, it has a function of shortening the wavelength of the microwave and adjusting the plasma. Further, between the planar antenna 3 1 and the microwave transmitting plate 28, and between the slow wave material 3 3 and the planar antenna 31, although they are closely arranged, they may be placed on the upper surface of the chamber 1 even if they are spaced apart. A cover member 34 is provided to cover the planar antenna 3 1 and the slow wave material 3 3 . The cover member 34 has a waveguide function of a metal material such as aluminum, stainless steel or copper. The upper surface of the chamber 1 and the cover member 34 are sealed by a sealing member 35. The cover member 34 is formed with a cooling water flow path 34a, and by circulating cooling water therethrough, the cover member 34, the slow wave material 3 3, the planar antenna 31, and the microwave transmitting plate 2 are cooled to prevent such breakage and deformation. Further, the planar antenna 3 1 and the cover member 34 are grounded. An opening portion 3 is formed in the center of the upper wall of the cover member 34, and a waveguide 37 is connected to the opening portion 36. At the end of the waveguide 37, a microwave generating device 39 constituting a microwave generating source is connected via a impedance matching portion (tuner) 38. Accordingly, for example, the frequency generated by the microwave generating device 39 is 2. The 45 GHz microwave is transmitted to the above-mentioned planar antenna 31 through the waveguide 37 which constitutes the waveguide. Moreover, in terms of the frequency of the microwave, it is also possible to use 8. 35GHz, -13- 201130398 1. 98GHz and so on. The waveguide 37 has a coaxial waveguide 37a having a circular cross section extending from the opening 36 of the cover member 34 to the upper side, and a mode converter 40 connected to the upper end of the coaxial waveguide 37a extending in the horizontal direction The rectangular waveguide 37b»the mode converter 40 between the rectangular waveguide 37b and the coaxial waveguide 37a has a function of converting the microwave propagating in the rectangular waveguide 73b in the TE mode into the TEM mode. An inner conductor 41 is extended in the center of the coaxial waveguide 37a, and the lower end portion of the inner conductor 41 is connected and fixed to the center of the planar antenna 31. Accordingly, the microwave propagates uniformly and efficiently toward the planar antenna 31 through the inner conductor 4 1 of the coaxial waveguide 37a, and the microwave radiation hole 32 from the planar antenna 31 is transmitted through the microwave transmitting plate 28 to the chamber. 1 inside. Further, the waveguide 37, the planar antenna 31, and the microwave transmitting plate 28 constituting the waveguide function as a waveguide mechanism for guiding the microwave generated by the microwave generating device 39 constituting the microwave generating source into the chamber 1. Each component of the microwave plasma processing apparatus 100 is connected to the control unit 50 and controlled. The control unit 50 is constituted by a computer, and as shown in Fig. 3, has a process controller 51 having a microprocessor, a user interface 52 connected to the process controller, and a memory unit 53. In the plasma processing apparatus 100, the process conditions such as temperature, pressure, gas flow rate, microwave output, and high-frequency power for bias application are expected to be controlled, and each component is controlled, for example. The heater power source 5a, the gas supply system 16, the exhaust device 24, the microwave generating device 39, etc., the user interface 52 has a keyboard for an operator to perform an input operation of the plasma processing device 100 - 14 - 201130398, or the like, or A display or the like in which the plasma processing apparatus 1 is displayed in an observable manner. Furthermore, it is useful to implement various processes performed by the plasma processing apparatus 1 under the control of the process controller 51, or to make each of the plasma processing apparatuses 100 in accordance with the processing conditions. The program that the component performs processing is the processing recipe. The control program or processing recipe is stored in the memory medium (not shown) in the storage unit 53. Even if the memory medium is a hard disk or a semiconductor, it can be transported even if it is a CD ROM, a DVD, or a flash memory. Furthermore, even if the recipe is properly transferred from another device via, for example, a dedicated return line, instead of memorizing the memory medium. Then, according to the requirement, the arbitrary processing recipe is called from the memory unit 5 by the instruction from the user interface 52, and the process controller 5 1 is executed, and accordingly, under the control of the process controller 51, the execution is performed. Expected processing of the plasma processing apparatus 100. In the present embodiment, a plurality of processing recipes are stored in the memory unit 53 of the control unit 50. Most of the formulas are formed by plasmas having different wave modes, and the plasma processing distribution of the plasma generated by each processing recipe is also memorized in advance in the memory unit 53 to be controlled from the majority of the processing recipes. The combination selects two or more processing recipes for obtaining the desired plasma density distribution, and performs plasma processing on the wafer W by the selected two or more processing recipes. Most of the processing recipes for forming such plasmas having different modes are prepared by, for example, at least one difference in the gas flow rate for performing the plasma treatment, the power of the microwaves, and the pressure in the chamber 1. In the RMS A type plasma processing apparatus 100 thus constructed, first, -15-201130398, the gate valve 26 is opened while the temperature of the carrier 2 is heated to, for example, 250 to 800 ° C by the heater 5. The wafer W is carried into the chamber 1 from the loading/unloading port 25, and is placed on the carrier 2. Then, the Ar gas was introduced at a flow rate of 500 to 2000 mL/min (how), and the pressure in the chamber 1 was adjusted to 66·7 to 667 Pa (0. 5~5Torr), in its state, with power 1000~4000W, power density 0. 51~ 2. 1W/cm2 was introduced into the microwave to ignite the plasma. The plasma ignition is performed by turning on the microwave generating device 39, and the microwave generated therein is guided to the waveguide 3 7 via the impedance matching portion (tuner) 38, sequentially passing through the rectangular waveguide 37b, the mode converter 40, and the coaxial The waveguide 37a is supplied to the planar antenna 3 1 via the inner conductor 41, and the microwave radiation hole 32 from the planar antenna 31 is radiated through the microwave transmission plate 28 to the space above the wafer W in the chamber 1, and the excitation is Execution is performed by supplying Ar gas into the chamber 1. At this time, the microwave system propagates in the TE mode in the rectangular waveguide 37b, and the TE mode microwave is converted into the TEM mode by the mode converter 40, and the inside of the coaxial waveguide 37a is propagated toward the planar antenna 31. An electromagnetic field is generated in the chamber 1 by the microwave radiated from the planar antenna 31 to the chamber 1 via the microwave transmitting plate 28, and the Ar gas is excited to be plasma. After the plasma is ignited, N2 gas is introduced into the chamber 1, and N2 is plasma (excited), and the wafer W is subjected to plasma nitriding treatment by its plasma. In the past, when such a plasma nitriding treatment was performed, although a single treatment recipe was used to generate a standing wave of stability, plasma was generated, but a plasma density distribution was sometimes formed in the radial direction when a standing wave was generated. Sometimes, the plasma density distribution is formed in the circumferential direction of -16-201130398, and it is difficult to ensure good in-plane uniformity of plasma processing. For example, in any of Figs. 4A and 4B, the microwave radiation holes of the planar antenna are set to the figure-eight shape shown in Fig. 5, and the plasma density distribution is easily generated. The luminescence state of the plasma at 45 GHz when the microwave is radiated at 400 W (the bright portion is high in plasma and the dark portion is low in plasma density), and Fig. 4A shows the case where the pressure in the chamber is set to 1 4 0 P a. Fig. 4B shows the case where the pressure is set to 20 Pa. From these figures, it can be seen that when the pressure is 140 Pa and at 20 Pa, the mode of the plasma is different, and the plasma density distribution is not uniform. Fig. 4A and Fig. 4B show that plasma is generated by a mode jump due to different processing conditions, and a plasma having a different mode is generated. In this embodiment, by using such a mode jump, it is possible to obtain The plasma processing distribution that is expected is a uniform nitriding treatment distribution (nitrogen concentration distribution). The mode transition is a phenomenon in which the mode of the plasma changes abruptly when the plasma generation conditions are changed. Specifically, for example, as shown in Fig. 6, when the power of the microwave is changed, a jump occurs, and the state of the plasma (here, the plasma density) becomes stepped (staged). Then, a flat portion between the portions of the mode transition is generated, which is the same plasma mode, and becomes an area where the processing of the stabilization can be performed. The mode hopping is not only the power of the microwave, but also causes other conditions such as pressure or gas flow in the chamber to be changed. By appropriately changing the processing conditions (that is, changing the processing recipe), different plasmas can be obtained. Most plasma modes of density distribution. Therefore, in the present embodiment, at the time of the plasma nitriding treatment, a plasma nitriding treatment in which the in-plane uniformity is high can be performed at -17 to 201130398, and the mode is formed from the memory of the squaring portion 53. A plurality of processing recipes of mutually different plasmas, by combining the two or more processing recipes that are typically expected to achieve a uniform plasma processing distribution, by selecting two or more processing recipes, for the wafer W Perform plasma processing. That is, in the past, the plasma formed by a treatment formulation was subjected to plasma nitriding treatment, and although the in-plane uniformity was low, even in such a case, by combining plasmas of different wave modes. Other processing recipes can perform plasma processing with high in-plane uniformity. Indicates a specific example. The pressure in the chamber 1 is: 30 Pa (225 mTorr), the flow rate of the Ar gas: 1 OOOmL/min (s. Ccm), N2 gas flow rate: 100mL/min (sccm), microwave power: 1500W, temperature: 400 °C condition treatment formula A, when plasma nitriding treatment is performed for 38 sec, the plasma density becomes the center low peripheral height The valley type distribution, when performing nitriding treatment in such a plasma mode, is a valley-type nitrogen concentration distribution corresponding to the plasma density as shown in Fig. 7 (the figure indicates that the concentration is high, the number is high) A larger value indicates a higher concentration, a concentration indicates a lower concentration, and a larger number indicates a lower concentration. The same applies hereinafter. The average enthalpy of nitrogen concentration at this time (Ave. ) is 1 4. 1 %, σ /Av e . For 2. 4 6 % of the result of poor uniformity. Furthermore, the pressure in the chamber 1 is: 30 Pa (225 mTorr), the flow rate of the Ar gas: 1000 mL/min (see), the flow rate of the N2 gas: l〇〇mL/min (see), the microwave power: 1 800 W, the temperature The treatment formula B under the condition of 400 ° C is to generate a mode transition from the above-mentioned treatment formula A to become a different plasma mode, and when the plasma treatment is performed for 36 sec with the treatment formula B, the plasma is dense. -18- 201130398 degree becomes the mountain-type distribution of the center high and low, and when performing nitriding treatment with such a plasma mode, it is a mountain type nitrogen corresponding to the electric prize density as shown in Fig. 8. Concentration distribution. The average enthalpy of nitrogen concentration at this time (A ve. ) is 1 4. 7 %, σ /A v e . For 3 . The result of a 10% homography difference. In this regard, by combining the treatment formula A and the treatment formula B, it is possible to perform plasma treatment with high in-plane uniformity, which can improve the in-plane uniformity of the nitrogen concentration. In fact, after processing for 27 sec between treatment A, the microwave power was raised to 1800 W to process the result of Formulation B for 9 sec, as shown in Fig. 9, it became a nitrogen concentration that could not be clearly seen in mountains or valleys. Distribution, reaching an average 如 such as nitrogen concentration (Ave〇 is 14. 30%, σ / Α ν e. Is 0 · 7 2 %, σ / A v e _ is less than 1. 0% high in-plane uniformity. In this way, by grasping the mode of the plasma according to the specific treatment formula in advance, it is possible to combine two or more treatment recipes to form the desired plasma treatment distribution, and to make the in-plane uniformity of the plasma nitriding treatment become good. Further, as with the above-described treatment recipes A and B, it is confirmed that the pressure in the chamber 1 is 30 Pa (22 5 mTorr ) 'the flow rate of the Ar gas: 1000 mL/min (see), Ν gas flow rate: l〇〇mL/ Min ( seem), temperature: 400 ° C, the microwave power is 500~1 600W (power density: 0. 2 5~0. When 8 5 W/cm2), it becomes a plasma mode of the plasma density distribution of the valley type, and by performing nitriding treatment on the plasma mode, the in-plane distribution of the nitriding treatment of the valley type can be obtained, and The microwave power is 1700~4000W (power density: 0. 86~2. When 1 W/cm2), it becomes a plasma mode of the mountain-type plasma density distribution. By performing nitriding treatment on the plasma mode, the in-plane distribution of the nitriding treatment of the mountain type can be obtained, so the combination is electrified. Slurry treatment -19- 201130398 The distribution becomes a treatment condition of the conditions of the valley type and the conditions which are appropriately selected among the conditions of the mountain type, whereby the plasma nitriding treatment with high in-plane uniformity can be performed. As described above, in order to change the microwave power to change the plasma mode, a specific example of changing the pressure in the chamber 1, the flow rate of the Ar gas, and the flow rate of the N2 gas will be described below. First, the flow rate of Ar gas is fixed: l〇〇〇mL/min (sccm), N2 gas flow rate: 200mL/min (see), microwave power: 1 8 5 0W, temperature: 400 °C, inside chamber 1 The pressure changes to 20Pa, 30Pa, 40Pa, 50 Pa, 66. At 66 Pa, the plasma mode is changed to perform plasma nitriding treatment. The distribution of the nitrogen concentration at this time is as shown in Fig. 10, and the distribution of the nitrogen concentration can be largely changed by the plasma mode. Therefore, when the plasma modes are appropriately combined, the variation in the nitrogen concentration distribution (plasma processing distribution) can be further reduced. Then, it is fixed into the chamber pressure: 40Pa (300mT〇rr), N2 gas flow rate: 200mL/min (see) 'Microwave power: 1 8 5 0W, temperature: 400 °C, the flow rate of Ar gas is changed into 500 mL/min (see), 1000 mL/min (seem), 2000 mL/min (seem), and the plasma morphing process was performed by changing the electric wave mode. The distribution of the nitrogen concentration at this time is as shown in Fig. 11, and the distribution of the nitrogen concentration can be largely changed by the plasma mode. Therefore, when the plasma modes are appropriately combined, the variation in the nitrogen concentration distribution (plasma processing distribution) can be further reduced. Next, it is fixed into chamber pressure: 40Pa (300 00TT rr), Ar gas flow rate: l〇〇〇mL/min (sccm), microwave power: 1850W, treatment -20- 201130398 temperature · 400C 'Change N2 gas flow rate 20mL/min (sccm), 40 m L / min ( seem ) , 1 OOmL / min ( seem ) , 200mL / min ( seem ) , 400m L / min ( seem ) , the plasma mode changes and the electricity is executed Slurry nitriding treatment. The distribution of the nitrogen concentration at this time is as shown in Fig. 2, and it is understood that the distribution of the nitrogen concentration can be largely changed by the plasma mode. Therefore, when the plasma modes are appropriately combined, the variation in the nitrogen concentration distribution (plasma distribution) can be further reduced. Further, in the above specific example, the plasma mode is changed by changing the process conditions one by one, but it is of course possible to change the mode even if the two conditions are changed. If more than two processing recipes are combined, if the processing time of the distribution nitriding treatment is divided into two or more processing recipes, the distribution method is arbitrary. For example, when combining two processing recipes, even if the first half of the processing recipe is processed by one party, the latter half of the processing recipe may be processed by the other party, even if the processing of the two processing recipes is performed interactively multiple times. Furthermore, the plasma processing distribution can also be controlled by varying the processing time of more than two processing recipes. The distribution control of the two or more processing recipes is performed by the control unit 50. The mode change of the plasma can be performed by changing at least one of the pressure in the chamber, the gas flow rate, and the power of the microwave. Therefore, most of the processing recipes of the plasma having different modes are formed, and if used, plasma is performed. It is sufficient to prepare at least one of the flow rate of the treated gas, the power of the microwave, and the pressure in the chamber, but it is preferable to change the microwave power from the viewpoint of changing the mode of the plasma in a short time. In an actual device, in order to change the plasma mode by the micro-21 - 201130398 wave power, after the mode jump, the impedance matching unit (tuning unit) 38 must obtain the synchronization that minimizes the reflected wave. Therefore, it takes about 2 seconds. Therefore, it is better to change the processing recipe to a span of 5 sec or more. In the present embodiment, the optimum conditions at the time of performing the plasma nitriding treatment include the pressure in the chamber: 6. 66~666Pa (0. 05~ 5 To rr ) Ar gas flow: 500 ~ 2000mL / min (sccm), N2 gas flow: 5 ~ 200mL / min (sccm), wafer W temperature: 250 ~ 500 ° C, microwave power: 500 ~ 4000W (power density: 0. 25~ 2. In the range of 1 W/cm 2 ), it is preferred to use two or more processing recipes having different processing conditions such as microwave power, chamber pressure, and flow rate of argon gas. After the nitriding treatment is completed, the plasma is turned off, and then the nitrogen gas is stopped. The flushing gas is supplied into the chamber 1 from the flushing gas supply system (not shown) to perform the flushing in the chamber 1, and then the gate valve 26 is opened. The wafer W is carried out from the loading/unloading port 25. In the present embodiment, for a plurality of processing recipes, the plasma processing distribution in the formation of plasma is memorized in advance, and from the plurality of processing recipes, two or more processing recipes of the desired plasma processing distribution are obtained by combination selection, by selecting Two or more processing recipes are used to perform plasma nitriding treatment on the wafer W, which is a processed object, and plasma nitriding treatment with good in-plane uniformity (N concentration or film thickness) can be performed. Specifically, the difference between the conventional plasma processing distribution (the deviation of the nitrogen concentration (σ) of the variation in the processing in the plane of the wafer of the object to be processed is divided by the processing average 値 (the average 値 of the nitrogen concentration) is - 22-201130398 is about several %, and can be set to 1% or less in the present embodiment. Further, since the microwave radiation holes 32 of the planar antenna 3 1 radiate microwaves to form microwave plasma, they become roughly lxl〇IQ~ 5xl〇12/cm3 of high density, and becomes 0 near the wafer W. 7~1. A low-electron temperature plasma of 2 eV or less can realize plasma nitriding treatment in which ions are less damaged by a radical-based substrate. In this way, the plasma processing distribution is memorized in advance for most of the processing recipes, and from the plurality of processing recipes described above, two or more processing recipes of the desired plasma processing distribution are obtained by combination selection, and more than two selected ones are selected. The formulation is processed, and plasma treatment is performed on the object to be processed, such as a wafer, whereby any plasma treatment distribution can be obtained, and microwave plasma treatment with good uniformity in a typical upper plane can be performed. Then, by performing the microwave plasma treatment in this manner, it is possible to obtain the in-plane uniformity in which the processing deviation (σ) in the plane of the object to be processed is divided by the average 値 of the treatment to be 1% or less. Further, the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the invention. For example, the present invention is applied to an oxidation treatment as described above, and in this case, an oxygen-containing gas such as helium 2 gas or helium 02 gas and a rare gas may be used as the processing gas to perform the treatment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a microwave plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a view showing the structure of the planar antenna member of the plasma processing apparatus of Fig. 1 - -23 - 201130398. Fig. 3 is a block diagram showing a schematic configuration of a control unit of the apparatus of Fig. 1. Fig. 4A is a view showing that the pressure in the chamber is set to 14 OP a, and the planar antenna of Fig. 5 is used. A photograph of the light-emitting state of a plasma formed by irradiating a microwave of 400 W with 45 GH. Fig. 4B is a view showing that the pressure in the chamber is set to 20 Pa, and the planar antenna of Fig. 5 is used. A photograph of the state of illumination of a plasma formed by 45 GH irradiating a microwave of 400 W. Fig. 5 is a view for explaining the microwave radiation holes of the planar antenna at the time of generating the plasma of Fig. 4. Figure 6 is a diagram for explaining the mode transition. Fig. 7 is a view showing an example in which plasma generated by using a treatment formula having a microwave power of 1 500 W is subjected to plasma nitriding treatment to obtain a nitrogen concentration distribution of a valley type. Fig. 8 is a view showing an example in which plasma generated by a treatment formulation having a microwave power of 1,800 W is subjected to plasma nitriding treatment to obtain a nitrogen concentration distribution of a mountain type. Fig. 9 is a view showing the distribution of the nitrogen concentration at the time of performing the plasma nitriding treatment using both the formulation for obtaining the nitrogen concentration distribution of Fig. 7 and the formulation for obtaining the nitrogen concentration distribution of Fig. 8. Fig. 10 is a graph showing the distribution of nitrogen concentration at the time of plasma nitriding treatment by changing the pressure in the chamber. Fig. 1 is a graph showing the nitrogen concentration distribution at -24-201130398 when the slurry flow rate is changed to change the Ar gas flow rate. Fig. 2 is a graph showing the nitrogen concentration distribution at the time of applying the plasma nitriding treatment to change the flow rate of the N2 gas. [Main component symbol description] 1 : Chamber 1 a : Bottom wall 2 : Carrier 3 : Support member 4 : Guide ring 5 : Heater 5 a : Heater power supply 6 : Thermocouple 7 : Pad 8 : Baffle 8 a : Hole 9 : Pillar 1 〇 : Opening 1 1 : Exhaust chamber 1 1 a : Space 1 5 : Gas introduction member 1 6 : Gas supply system 17 : Ar gas supply source 18 : N 2 gas supply source - 25 - 201130398 20: gas piping 2 1 : mass flow controller 22: switching valve 2 3 : exhaust port 2 3 a : exhaust pipe 24: exhaust device 25: loading and unloading port 26: gate valve 27: flat plate 27a: support portion 2 8 : microwave transmitting plate 2 9 a : sealing member 2 9b : sealing member 3 1 : planar antenna 3 2 : microwave radiation hole 3 3 : slow wave material 3 4 : cover member 34a : cooling water flow path 3 5 : sealing member 3 6 : Opening 37: waveguide 37a: coaxial waveguide 37b: rectangular waveguide 3 8 : impedance matching unit -26-201130398 3 9 : microwave generating device 40: mode converter 4 1 : inner conductor 5 0 : control unit 5 1 : Process controller 5 2 : user interface 5 3 : memory unit 100 : microwave plasma processing device -27-