TW201121067A - Thin film solar cell and manufacturing method thereof - Google Patents

Abstract

A thin film solar cell including a substrate, a plurality of photovoltaic cells and at least one control unit is provided. The photovoltaic cells disposed on the substrate generate a photocurrent respectively. Each photovoltaic cell includes a first conductive layer disposed on the substrate, a photovoltaic layer and a second conductive layer. The photovoltaic layer disposed on the first conductive layer has an opening exposing the first conductive layer. The second conductive layer disposed on the photovoltaic layer is connected electrically to the first conductive layer of the adjacent photovoltaic cell through the opening. The control unit is connected to at least one of the photovoltaic cell electrically. The photocurrent generated by at least one of the photovoltaic cells is different from others, the control unit provided a compensable current to the first photovoltaic cell, so as to make the photocurrent provided by the overall photovoltaic cells being matched.

Description

201121067 ii / )9twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a solar cell and a method of fabricating the same, and particularly to a film having a better photoelectric conversion efficiency. Solar battery and its method of making and optimizing. [Prior Art] With the rise of environmental awareness, the concept of energy conservation and carbon reduction has gradually been emphasized by the audience. The development and utilization of renewable energy has become the focus of active development in all countries of the world. Among them, solar cells that convert sunlight into electrical energy are the most promising star industries, so many manufacturers have invested in the manufacture of solar cells. At present, the key problem of solar cells is that their photoelectric conversion efficiency is improved, and the photoelectric conversion efficiency of solar cells can be improved, that is, the competitiveness of products is improved. 1 is a schematic top view of a conventional thin film solar cell. Figure 2 is a schematic cross-sectional view taken along line A-A' of Figure 1. Referring to FIG. 1 and FIG. 2, the thin film solar cell 100 includes a substrate 110, a first conductive reed layer 130, and a second conductive layer 140. Among them, the thin film solar cell 1 〇〇 has a plurality of photovoltaic cells 102 connected in series to each other. The photovoltaic layer 13 is a photoelectric conversion structure having a ρ junction. For example, when the light L is irradiated from the outside to the thin film solar cell 100, the photovoltaic layer 130 is adapted to receive an electron hole pair by the light energy, and the electron and the hole are respectively made by the built-in electric field formed by the PIN junction. The first conductive layer 120 and the second conductive layer HO move to form a photocurrent, and generate a '.doc/n 201121067. If a load circuit or an electronic device is added, k drives the circuit or device. The film is too tempered by the process or other factors, and in the thin film, the photovoltaic unit 1G2 produces a large photo-current: :: different: and the photocurrent does not match. w:, check; S 'Because each photovoltaic unit 102 is connected in series, the photocurrent generated by the photovoltaic unit 102 is smaller than the photocurrent generated by the i 10$# volt single 70 102, thin film solar power The photoelectric conversion efficiency of #102 is limited by the influence of the photovoltaic element 102 having a small photocurrent. SUMMARY OF THE INVENTION (4) The present invention provides a phase-to-phase solar cell having better photoelectric conversion efficiency. The present invention also proposes a method for fabricating and optimizing a thin film solar cell, which can produce the above-mentioned solar cell. The present invention provides a thin film solar cell comprising a substrate, a plurality of photovoltaic units, and at least a (four) unit. The photovoltaic unit is disposed on the substrate and is adapted to generate a photocurrent individually. Each photovoltaic unit includes a first conductive layer, a photovoltaic layer, and a second conductive layer. The first conductive layer is disposed on the substrate. The photovoltaic layer is disposed on the first conductive layer and has an opening, wherein the opening exposes the first conductive layer. The second conductive layer is disposed on the photovoltaic layer and is electrically connected to the first conductive layer of the photo-photovoltaic unit through the opening. The control unit is electrically connected to the unit, and the towel (4) unit is inspected for at least 201121067 ^.h jit i^twf.doc/n The photocurrent generated by one of the units is different from the light generated by other photovoltaic units. The unit outputs - the current is in the photovoltaic unit, bridging the overall photo current matching provided by the volt unit (current. In one embodiment of the invention, the control unit is a specific application integrated circuit (AppliCati〇n-Specific Integrated Circuit) , ASIC).

In the implementation of the present invention, when the control element output compensation current is 7 〇, the electrodes of the control unit are electrically connected to the photovoltaic unit and the second conductive layer, respectively. Conductive Layer In one embodiment of the invention, the control unit is electrically connected to the photovoltaic unit in a manner that uses wires or wires. In a film layer in an embodiment of the invention. The control unit is integrated in the photovoltaic unit. In one embodiment of the invention, when the number of control units is two or more, the control units are located on the same side or on different sides of the photovoltaic units.

In an embodiment of the present invention, the material of the photovoltaic layer comprises a four-element element semiconductor film of the elemental table, a semi-conductive element of the tri-five compound of the periodic table of the elements, a group of common conductors or an organic compound = + conductor film or combination. In one embodiment of the present invention, the quadratic semiconductor film of the periodic table comprises a single crystal phase, a polycrystalline phase, a carbon film of an amorphous phase and a microcrystalline phase, a stone element film, a tantalum film, and carbonization. (4) at least one of or a combination of a film or a cut-off film. In one embodiment of the present invention, the tri-five compound semiconductor thin film of the periodic table includes a film of a gallium arsenide (GaAs) compound or a film of an indium phosphide f.doc/n 201121067 (InGaP) compound, at least one of Its combination. In one embodiment of the present invention, the hexa-group compound semiconductor film of the periodic table comprises a copper indium cat (CIS) compound film, a copper indium gallium (cigs) compound film, and a CdTe compound film. ♦ Or a combination thereof In one embodiment of the invention, the organic compound semiconductor film comprises a mixture of a plurality of polymer donors and a nanocarbon balloon acceptor. In an embodiment of the invention, the photovoltaic layer is a single-layer photoelectric conversion layer, a two-layer photoelectric (four) layer, a three-layer photoelectric conversion layer, or a stacked structure of three or more layers. In an embodiment of the invention, the material of the first conductive layer is a transparent conductive conductive layer, and the second conductive layer comprises at least one of a reflective layer and a transparent conductive layer. In the embodiment, the second conductive layer is: The transparent conductive layer, and the first conductive layer comprises at least one of the reflective layer and the transparent conductive layer. The production and optimization of the conjugated solar cell is included in the following steps. First, it is provided that the control unit detects the photocurrent matching of each light two = photocurrent different from the output one compensating power. , ... ', shame (7) yuan volt unit provided, yuan on the substrate. Then, electrically connected to i; #雷2 current size. Then, when the j-flow of the photovoltaic unit to the new m is different from the other photovoltaic single-time = the output of the current-compensation current is in the _ 幻 冤 冤 ,, the control unit of the 弁 雷, ^ 献 early 70, the thief's overall photovoltaic 201121067 t ^twf.d〇c/nf1匕•? The electrical material layer is formed on the substrate by forming a layer of the first-conducting two photovoltaic material of each photovoltaic unit to cover a plurality of photovoltaic openings, Electrical layer. The layer of photovoltaic material is then patterned to form a plurality of layers. Resaturating, opening, respectively, exposing the first conductive two coarse layers of the plurality of photovoltaic cells to a second conductive material layer on the substrate to cover the photovoltaic simultaneously patterning the two conductive material layers and the photovoltaic material layer, a photovoltaic layer and a second conductive layer, wherein each conductive layer electrically conductive layer passes through the opening and the first laser of the adjacent photovoltaic unit, and the method of picking the mouth includes performing a one-step process or a mechanical force removal Process. In an embodiment of the photovoltaic device, the control unit is electrically connected to the electrode of the first unit and electrically connected to the electrode of the first unit; and thus the unit also provides H conversion efficiency. Further, the method of the present invention. The above features and advantages of the present invention are more apparent and easy to understand. The following is a detailed description of the embodiment of the present invention and is described in conjunction with the accompanying drawings. [Embodiment] FIG. 3 is a schematic view of a thin film solar cell according to an embodiment of the present invention, and FIG. 4 is a schematic cross-sectional view of the thin film solar cell taken along line BB' of FIG. Referring to FIG. 3 and FIG. 4 simultaneously, the thin film solar cell 2 includes a substrate 210, a photovoltaic unit 202, and at least one control unit 204. In the present embodiment, the substrate 210 is, for example, a transparent substrate such as a glass substrate. The plurality of photovoltaic units 202 are disposed on the substrate 21A and the photovoltaic cells 2〇2 respectively generate photocurrents 2〇2, wherein each of the early 2〇2 includes the first conductive layer 220, the photovoltaic layer 23〇, and the first = 240. In detail, the first conductive layer 22 is disposed on the substrate 21, and the second layer 230 is disposed on the first conductive layer 22 and has an opening η | the first conductive layer 22 is exposed by the opening Η. The second conductive layer is disposed on the layer 230, and the second conductive layer 24 is electrically connected to the adjacent conductive layer 22 through the opening ^|^, as shown in FIG. = 2: The above-mentioned photovoltaic cells 2 〇 2 are electrically connected to each other in a series manner, for example, the first conductive layer 22G is, for example, zinc oxide, indium tin oxide, indium zinc oxide, indium two. At least one of an oxide, a conversion oxide, a conversion oxide, an oxide, a zinc compound, a gallium zinc oxide or a tin fluoride. In the embodiment of the '2 oxygen diagram, the first conductive layer may also be - a reflection ^ = 8 201121067 ^ ji/iytwf.doc / n is shown) and the above transparent conductive layer is laminated, wherein the reflective layer is in place The conductive layer and the substrate are used, and the reflective layer may be made of a metal having good reflectivity such as (10), silver (Ag), molybdenum (Mo) or copper (Cu). In this embodiment, the material of the photovoltaic layer .230 may be, for example, a four-element semiconductor thin film of a meta period, a half-five compound semiconductor thin film of the periodic table, a bi-family compound semiconductor film or an organic compound semiconductor thin film of the periodic table or Its combination. In detail, the four-element element + conductor film of the periodic table is, for example, a single crystal phase, a polycrystalline phase, a carbon phase of an amorphous phase and a microcrystalline phase, a thin film, a germanium element, a germanium element, a carbon cut film or a stone eve. The faulty film is at least - or a combination thereof. The trivalent compound semiconductor film of the periodic table is, for example, at least one of a film of a gallium arsenide (GaAs) compound or a film of an indium-plated (InGaP) compound, or a combination thereof. The Group VI compound semiconductor thin film is, for example, a copper indium selenide (CIS) compound film, a copper indium gallium selenide (CIGS) compound film, a cadmium telluride (CdTe) compound film, or a combination thereof. Further, the above organic compound semiconductor thin film may be a mixture of a conjugated polymer donor and a nanocarbon balloon acceptor. In addition, the film structure of the photovoltaic layer 230 is, for example, a single-layer photoelectric conversion structure using a pn junction formed by a p-type semiconductor and an N-type semiconductor, or a PIN composed of a P-type semiconductor, an intrinsic layer, and an N-type semiconductor. A single-layer photoelectric conversion structure of the junction, but the invention is not limited thereto. In other embodiments, the photovoltaic layer 230 may also employ a two-layer photoelectric conversion layer, a three-layer photoelectric conversion layer, or a stacked structure of three or more photoelectric conversion layers. In this embodiment, the second conductive layer 240 may be the material mentioned in the above-mentioned transparent conductive layer, and will not be described herein. In addition, the second conductive layer 240 may further include a reflective layer, wherein the reflective layer is located on the transparent conductive layer. It should be noted that when the second conductive layer 24 has a reflective layer, the first conductive layer 220 can only be a transparent conductive layer. On the contrary, when the first conductive layer 220 has a design of a reflective layer, the second conductive layer 24 〇 can only be a transparent conductive layer without the above-mentioned reflective layer. In an embodiment, the first conductive layer 220 and the second conductive layer 240 may also be transparent conductive layers without a reflective layer configuration. In other words, the design of this part can be adjusted according to the needs of the user (for example, to produce a double-sided light-receiving thin film solar cell or a single-sided light-receiving film solar cell), which is merely an example, not limited to it. Referring to FIG. 3, the control unit is electrically connected 2〇2', wherein the control unit can detect the photocurrent generated by the photovoltaic unit 202 after receiving light. However, in the process practice, the film layer of light may be manufactured (4) or the photocurrent generated by other photovoltaic units may be different in part and cause photocurrent to be different. In other words, when 大小~ is different, the size of 2G2b is different from the size of photocurrent 2〇2a generated by 2〇2, and the first squid is output-compensated with current-a In order to make the overall photovoltaic unit move the two single (c_t match^, where the control unit is connected in parallel with the photocurrent, the current can be superimposed. /, first volts early 202, in other words, in the thin film solar cell ten, Since the photovoltaic unit 2〇2 10 201121067 Ji/iytwf.doc/n is electrically connected in series, if part of the 2〇2 produces a photocurrent 202b smaller than that of most other photovoltaic units. The overall photoelectric conversion efficiency is limited by the photocurrent mismatch. The control unit 204 of the present embodiment can detect the photocurrents 202a, 202b generated by the photovoltaic unit 2〇2 at any time, and the control unit 2〇 4 The current sink 204a is used for the photovoltaic unit that generates the smaller photocurrent, and the medium control unit 204: is electrically connected to the photovoltaic unit 2〇2 in parallel. Thus, the photocurrent of the photovoltaic unit 2〇2 can be improved.Therefore, the photocurrent of all the photovoltaic cells connected in series can be moved, a, and so on, so that the overall light rate of the thin film solar cell can be improved. f In this embodiment, the control unit is, for example, Application-Specific Integrated Circuit (ASIC) / its = control unit it 204 can be electrically connected to each photovoltaic unit in an external manner; ^ 2G2 'for example: wire or wire. Since the control unit 204 is electrically connected to each of the photovoltaic units 2〇2 in parallel, the positive and negative poles of the control unit are electrically connected to the second conductive layer 22G and the second conductive layer 24G of each photovoltaic unit 02, respectively. Sexual connection. The number of control units 204 in Fig. 3 is exemplified by one, but in other cases, the number of 'control units 2〇4' may also be multiple, that is, every = volt unit 202 Both can be connected in parallel to each other, so as to control the photocurrent of the output of the photovoltaic unit 2兀2, which is based on the user's ί, "° and juice, the invention is not limited to this. In addition, the control Unit 2〇4 201121067 en ^ 1 / When the number of iyiwf.doc/η is two or more, then the control unit 2〇4 may be located on the same side of the same side of the photovoltaics as the control unit may be located at the photovoltaic_moving edge. In another embodiment, the control unit The above-described specific application stack circuit may be integrated into the film layer of the light 202 by means of a semiconductor process. Hereinafter, a method for manufacturing and optimizing the above-mentioned thin film solar cell device will be described. - Process diagram for the fabrication and optimization of the thin film solar cell, and FIG. 6 is a flow diagram of the process of forming the photovoltaic unit on the substrate of FIG. Please refer to step 3〇1 and FIG. 4 of FIG. 5 simultaneously. First, the substrate 210 described above is provided, and the substrate 21 is, for example, a glass substrate. Then, step 302 is performed to form a plurality of the above-mentioned photovoltaic units 2〇2 on the substrate 210, as shown in FIG. In the present embodiment, the method of forming the photovoltaic unit 202 is, for example, a flow chart of the steps as shown in FIG. In detail, referring to step 302a of FIG. 6 , a first conductive material layer (not shown) is formed on the substrate 210 , wherein the first conductive material layer is formed by using a material of the transparent conductive layer mentioned above, for example. The method of the first conductive material layer is, for example, a sputtering method, a metal organic chemical vapor deposition (CVD) method, or an evaporation method. Next, step 302b of FIG. 6 is performed to pattern the first conductive material layer to form the first conductive layer 220 of each of the photovoltaic cells 202, as shown in FIG. In this embodiment, the manner of patterning the first conductive material layer is mainly a laser shoe etching process as an implementation example. In other possible embodiments, other suitable etching process may be employed. Then, the step 201121067 ^ j i / iytwtdoc / η 3 〇 2c of FIG. 6 is performed to form a photovoltaic material layer (not shown) on the substrate 210 to cover the first conductive layer 220 of the plurality of photovoltaic cells 202. In this embodiment, the method for forming the photovoltaic layer 230 is, for example, a Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) or an ultra-high frequency plasma assisted chemical vapor deposition method. (Very High Frequency Plasma Enhanced Chemical Vapor Deposition, YHF PECVD) or Microwave Plasma Enhanced Chemical Vapor Deposition (Microwave Plasma Enhanced Chemical Vapor Deposition,

MW PECVD) ° followed by 'step 302d of FIG. 6 to pattern the photovoltaic material layer to form a plurality of openings 其中' wherein the plurality of openings 曝 expose the first conductive layer 220 of the plurality of photovoltaic cells 202, respectively, as shown in FIG. . In the present embodiment, the manner in which the plurality of openings are formed is, for example, a laser process, an etching process, or a mechanical force removal process. Then, step 302e of FIG. 6 is performed to form a second conductive material layer on the substrate 210 to cover the photovoltaic material layer. The second conductive layer 240 is generally used as a back electrode of a plurality of photovoltaic cells 2〇2, as shown in FIG. In the present embodiment, the method of forming the second conductive layer 240 is, for example, the above-mentioned method, the metal organic chemical vapor deposition method, or the stage method, and the material thereof is not described herein. Then, in step 3 〇 2f of the lamp diagram 6, (4) patterning the fourth (4) material layer to form the photovoltaic layer 2 of each photovoltaic unit, and the second layer 240, as shown in FIG. 4, wherein each photovoltaic unit The second conductive 1 240 is electrically connected to the first 13 201121067 ^^i/iyiwf.doc/n conductive layer 220 of the adjacent photovoltaic unit through the opening σ η. 5,, >& + 1 ΟΛ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ After the completion of the above steps, the domain is first transferred to the substrate 210, and then connected to $, and the graph 303 is electrically connected to at least - the upper - ^ 909 ^ ^ ^ ^ - the above control is performed on the photovoltaic unit 202 ' is not shown in Figure 3. In the case of Taiyi, the method of electrically connecting the control unit 204 / the performance of the saponin is, for example, the above-mentioned laser welding process or wire-laying (w-lng). In another - to implement

Is the control unit 204 in a photovoltaic unit? 09 士, + L According to the method of (10) early 202, the control unit 204 may be integrated into the cavity of the photovoltaic unit 202; in the film layer of the second, the negative electrode of the control unit 204 is electrically connected to each The photovoltaic unit 2〇220 and the second conductive layer 24〇. Conductive layer

Then, referring to step 3〇4 and FIG. 3 of FIG. 5, the above-mentioned control soap element is used to detect the photocurrents 〇2a, 202b generated by each photovoltaic unit after being received by light. Finally, in step 3, when the photocell 202a generated by the photovoltaic unit is at least different from the photocurrent 202b generated by the other photovoltaic unit 2〇2, the control unit 204 outputs the compensation current 204a to the photovoltaic unit. 202, in order to match the photocurrent provided by the overall photovoltaic unit 2〇2. The detailed current matching mechanism can be referred to the description of the above, and will not be described here. After completing step 3 (n~305), a method for fabricating and optimizing a thin film solar cell is completed. _ In summary, since the thin film solar cell of the present invention has a control design, it is When the photocurrent provided by the button unit is different, 14 201121067 ^ ji /iytwf.doc/n is electrically connected with a part of the photovoltaic unit to improve the series connection. The thin film solar cell of the invention can have the same and most In addition, the method for fabricating the thin film solar cell of the present invention can be improved in a relatively simple manner by forming the sun in the case of Koga's manufacturing, and the present invention has been disclosed in the above embodiments by way of example. , ^ is not used to limit

Within the spirit and scope of the present invention, when the application can be made and modified, the application for full-time _ defined by the _ defined as the standard X [simple description] = 习! A schematic top view of a thin film solar cell. Figure 2 is a schematic cross-sectional view of the line segment of Figure 1 h-A. Fig. 3 is a thin view of an embodiment of the present invention. Fig. 4 is a schematic view of the battery along the center of Fig. 3; Schematic diagram. The fabrication and optimization of the thin-film solar cell of the thin-film solar cell of the J-line transfer is shown in Fig. 5 as a step of forming the photovoltaic cell in the base (four) process. [Main component symbol description] 100, 200: thin tan solar cell 102, 202: photovoltaic unit 201121067 / iytwi: .doc / n 110, 210: substrate 120, 220: first conductive layer 130, 230: photovoltaic layer 140, 240 : second conductive layer 202a, 202b: photocurrent 204: control unit BB,: line Η: opening L: light

Claims (1)

201121067 24 31719twf.doc/n VII. Patent application scope: 1. A thin tantalum solar cell comprising: a substrate; a plurality of photovoltaic units disposed on the substrate and adapted to generate a photocurrent individually, wherein each of the plurality The photovoltaic unit includes a first conductive layer disposed on the substrate; a photovoltaic layer disposed on the first conductive layer and having an opening exposing the first conductive layer; a second conductive layer disposed on the photovoltaic layer and passing through the opening and adjacent to the photovoltaic unit The first conductive layer is electrically connected; and at least one control unit is electrically connected to the photovoltaic units, wherein the element detects the (four) volts 71 at least the generated photo-electricity II; When the photocurrent generated by the unit is generated, the control specifically compensates for the flow of the photocells to the photovoltaic cells, so that the photovoltaics of the whole are provided with some emferring. Intermediate = as. Applying for the film and solar cell according to item 1 of the patent scope, the τ Guanggong unit is an application-specific integrated circuit (ASIC). In the thin-film solar cell described in the above, when the W _ _ early π outputs the compensation current to the photovoltaic cells, the controlled electrodes are electrically connected to the conductive layers of the photovoltaic cells, respectively. In this case, please refer to the _ solar cell described in item 1 of the _ solar cell, ^ control the early element connected to the button unit by using the method 17 201121067 ^ 〇n j^iwi.doc/n or wire. 5. The thin film solar cell of item i, wherein the control unit is integrated into the film layer of the photovoltaic unit. VIII 6. If the number of 苴 units is more than two, the number of control units is the same as the above-mentioned or different sides of the nine groups. 7. The thin film solar cell according to claim i, wherein the material of the photovoltaic layer comprises a four-element element semiconductor film of a periodic table, a three-five-group compound semiconductor film of a periodic table, and an elemental periodic table A hexa-compound semiconductor film or an organic compound semiconductor film or a combination thereof. 8. The thin film solar cell according to claim 7, wherein the halogen element of the four-element element semiconductor of the periodic table comprises a single-crystal phase, a multi-, a non-phase, a carbon film of a phase and a microcrystalline phase. Cutting the elemental film, the wrong element, the ruthenium film, the tantalum carbide film or the bismuth telluride film at least - or a combination thereof. 9. The thin film solar cell described in claim 7 is a three-fifth compound semiconductor thin film comprising a film of a GaAs compound or an indium gallium phosphide (InGap) compound. It is harmonious. 10. The application of the film according to item 7 of the patent scope of the twenty-six pure compound semi-conducting material contains copper indium, S) 5 binding film, a copper indium bismuth (CIGS) compound film, a At least one or a combination of the CdTe compound film. The thin film solar cell of the seventh aspect of the urn patent, the organic compound semi-conductive (four) film comprises -_polymer donor and a 18 201121067 i A thin film solar cell according to claim 1, wherein the photovoltaic layer is a single-layer photoelectric conversion layer, a double-layer photoelectric conversion layer, A three-layer photoelectric conversion layer or a stacked structure of three or more photoelectric conversion layers. The thin film solar cell according to claim 1, wherein the material of the first conductive layer is a transparent conductive layer, and the second The conductive layer comprises at least one of a reflective layer and a transparent conductive layer. The thin film solar cell of claim 1, wherein the material of the second conductive layer is a transparent conductive layer, and the first conductive layer comprises at least one of a reflective layer and a transparent conductive layer. 15. A method of fabricating and optimizing a thin film solar cell, comprising: providing a substrate; forming a plurality of photovoltaic units on the substrate; electrically connecting at least one control unit to the photovoltaic units; detecting by the control unit The magnitude of the photocurrent generated by each of the photovoltaic units; and at least one of the generated photocurrents is different from the photocurrent generated by the eight-sided photovoltaic single TL, the control-compensation of the photovoltaic units, betting This glimpse is known: the current matching is provided. The method for forming a thin film solar cell according to item 15 of the invention, wherein the method for forming each of the photovoltaic cells forms a layer of a first conductive material on the substrate; 19 201121067 ni / 1 VLVV 乂d 〇c/n patterning the first conductive material layer to form a first conductive layer of each of the photovoltaic units; rising/forming a photovoltaic material layer on the substrate to cover the first conductive layer of the photovoltaic elements; The photovoltaic material layer is formed to form a plurality of openings, wherein the openings respectively expose the first conductive layer of each of the photovoltaic cells; forming a second conductive material layer on the substrate to cover the photovoltaic material layer And patterning the first conductive material layer and the photovoltaic material layer to form a photovoltaic layer and a second conductive layer of the photovoltaic unit, wherein the second conductive layer of each light is transparent and open The first conductive layer consuming the photovoltaic unit is electrically connected. The two 1 = cofferdam: 6 thin film solar cells described in the line - towel shape (4) method includes "shooting 耘, an etching process or a mechanical force removal process. The fabrication and drying of the thin film solar cell according to item 15 is performed by electrically connecting the control unit to the control unit or the wire-g. The method of fabricating and optimizing the thin-film solar cell photovoltaic unit of the 15th member includes:, connecting the pure township to the film layer integrated in the photovoltaic cells, and the Two conductive reeds. The second layer of the first layer of the conductive layer and 20