[go: up one dir, main page]

TW201113120A - Polishing pad dresser - Google Patents

Polishing pad dresser Download PDF

Info

Publication number
TW201113120A
TW201113120A TW098134719A TW98134719A TW201113120A TW 201113120 A TW201113120 A TW 201113120A TW 098134719 A TW098134719 A TW 098134719A TW 98134719 A TW98134719 A TW 98134719A TW 201113120 A TW201113120 A TW 201113120A
Authority
TW
Taiwan
Prior art keywords
abrasive
polishing pad
substrate
working surface
clusters
Prior art date
Application number
TW098134719A
Other languages
Chinese (zh)
Inventor
Chien-Min Sung
Ying-Tung Chen
Original Assignee
Chien-Min Sung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chien-Min Sung filed Critical Chien-Min Sung
Priority to TW098134719A priority Critical patent/TW201113120A/en
Priority to KR1020100079712A priority patent/KR101147149B1/en
Publication of TW201113120A publication Critical patent/TW201113120A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

This invention relates to a polishing pad dresser, comprising a number of individual abrasive particle clusters arranged on a working surface of a substrate. The outer circle of particle clusters on the working surface contains more abrasive particles which aresmaller sized abrasive particles, and the inner circle of particle clusters contains less abrasive particles which are larger sized abrasive particles, to enhance the abrasive resistance, enhance the cutting efficiency, and prolong the operation lifespan.

Description

201113120 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種修整器，尤其是有關CMP拋光墊的修整器 及其製法。 【先前技術】 化學機械拋光(Chemical Mechanical Planarization，CMP) 疋目鈾半導體晶圓表面平坦化的製程中最受矚目的技術。在化學 I 機械拋光製程中，拋光墊的功能是將拋光液穩定而均勻地輸送至 晶圓與拋光墊之間，在化學蝕刻與機械磨削兩者相互作用下，將 晶片上凸出的沈積層移除。 為了達到晶圓加工量產的需求及維持品質的穩定性，必須利 用鑽石修整器（Diamond dresser)在化學機械拋光的過程中適 時地對拋紐财修整’除了鎌表面之拋細產物，恢復抛光 塾的粗糙面’改善其容納_的能力，並恢復拋光墊表面的孔洞 镰及其把持、運送拋光液之能力，如此可以節省抛光塾成本，並可 達到晶圓量產時品質穩定的需求。 有各種不同修整简專利’例如台灣公開專利2_卿揭 示-種修整晶圓研磨墊的修整器，包含：—基板，在絲板之上 表面具有多個凹槽；固著材料，充填在該多個凹槽中；以及多個 磨粒，該多個雜被該固著材湘著在該多個凹槽中。直中該多 個凹槽係依規則性排列，該多個凹槽之每一個凹槽尺寸僅能容納 顆磨拉。此專利的每1槽僅納納—顆磨粒，無法使每-凹槽 201113120 視不同需要安排不同大小或不同數量的磨粒，以提升修整器的修 整效率及使用壽命。 台灣專利1286097揭示一種研磨工具，包含有一基材、多個 磨料顆粒簇及一結合劑層；多個磨料顆粒簇是以規則排列方式設 置於該基材表面；該磨料顆粒簇係為群聚之多個磨料顆粒，該磨 料顆粒簇之相互間距在7〇〇um以下，且每一該磨料顆粒簇包含有 2〜8個磨料顆粒；結合劑層係使該磨料顆粒固著於該基材。此專 • 利雖使2-8個磨料顆粒聚集為一磨料顆粒簇’但未揭示可視不同 需要在基材的較外圈處，配置較小顆或較多顆磨料顆粒的磨料顆 粒簇，而在基材的較内圈處配置較大顆或較小顆磨料顆粒的磨料 顆粒簇，以提升修整器的修整效率及使用壽命。 【發明内容】 為了&升鑽石切削工具的耐磨性及切削效率，而提出本發 明。 $ _ 本發明的主要目的’在提供—麵級修整器，使多個別的 磨粒簇被排列在-基板的工作面上，工作面上較外圈的磨粒義含 有較多顆或較小粒徑的磨粒，而在工作面上較内圈的磨粒蔡含有 較少顆或粒練大的練，以提升修整器的耐紐，提升切削效 率及延長使用壽命。 本發明的拋光墊修整器，是作為CMP拋光塾的修整器者，包 括： —基板，設有一工作面； 201113120 夕個磨粒族’分職合該基板；該多個絲切綱分別突出 該工作面；該多個磨粒箱分別具有至少一個磨粒； 其t»亥夕個磨粒簇的磨粒數量由該工作面的外圈向該工作面的 t心處遞減。 本發明的其他目的、功效，請參晒式及實施例，詳細說明 如下。 【實施方式】 如圖1、2所示，本發明第-實施例的拋光塾整修器卜尤 鲁其是作為CMP拋光塾的修整器者，包括一基板u、多個磨減 12及一固定模具13所組成。 基板11設有一工作面11〇,固定模具13置於工作面11〇上。 固定模具13設有對應於多個磨粒簇i 2的多個穿透孔】3i;多個 穿透孔131分別容置多個磨粒簇12。多個磨粒蔡12分別包含至 少-顆磨粒121。多個磨粒簇12、固定模具13與基板u之間 藉由結合劑14固定結合；多個磨粒簇12的切削端12〇分別突 鲁 出工作面110。 本施例的多個穿透孔131具有相同的孔徑，多個磨粒簽12 的磨粒121數量由工作面110的外圈lu向其中心112處遞減， 但多個磨減12的練121陳徑红作面⑽料圈ui向 其中心112處遞增。 由於拋光墊整修器1在進行對拋光墊修整作業時，工作面 no外圈m的旋轉速度較其中心112的旋轉速度快，因此工作 面110外圈111的磨粒鎮12較在工作面11〇中心112的磨粒娱 201113120 12更容易磨耗。本施例使多個磨粒簇12内的磨粒]21數量由工 作面110的外圈111向其中心112處遞減，使多個磨粒121不 管在外圈111或靠近中心112處的磨耗率較為接近，而不會如 前述專利中靠進中心處的磨粒仍可使用，而靠近外圈的磨粒已 磨耗無法使用’而必須更換修整器，造成浪費，或不更換修整 器繼續使用時而降低對拋光墊的修整效率。 如圖3、4所示’本發明第二實施例的抛光墊整修器2包括 • 一基板21、多個磨粒簇22及一固定模具23所組成。 基板21設有一工作面210,固定模具23置於工作面210上。 固定模具23設有對應於多個磨粒簇22的多個穿透孔231;多個 穿透孔231分別容置多個磨粒簇22。多個磨粒簇22分別包含至 少一顆磨粒221。多個磨粒簇22、固定模具23與基板21之間 藉由結合劑24固定結合；多個磨粒簇22的切削端220突出工 作面210。 # 本施例的多個穿透孔231的孔徑由工作面210的外圈211 向其中心212處遞減，多個磨粒簇22内的磨粒221具有相同的 粒徑；但多個磨粒簇22内的磨粒121數量由工作面210的外圈 211向其中心212處遞減。 如第一實施例中所述，本施例使多個磨粒簇22的磨粒221 數量由工作面21〇的外圈211向其中心212處遞減’使多個磨 粒221不管在外圈211或靠近中心212處的磨耗率較為接近， 而不會如前述專利中靠進中心處的磨粒仍可使用，而靠近外圈 201113120 的磨粒已磨耗無法使用，而必須更歸整器，造成浪費，或不 更換修整器繼續使用時而降低馳光塾的修整效率。 本么月的基板的材料包含金屬、金屬合金、塑膠材料 (Polymer)、陶製品、碳製品、及上述材料的混合物，以胤 不銹鋼材料為佳。 本發明的雜的材料可為人造或非人造鑽;δ、多晶鑽石 ⑽）、立方晶氮化贿ΒΝ)、多晶立方氮化棚⑽ν)、最硬結 • 晶體、多晶材料、或上述材料的混合材料等所組成。 本翻的m定模具可為任何形狀、厚度、或材f，而具有 口疋磨粒的此力’能達成固定磨粒的功效者；典型的固定模具 的材料包含金屬、金屬合金、有機聚合物(p〇lymer)、陶製材料、 %材料、玻璃材料、及上述材料的混合物，其中以不鏽鋼為實 施例代表。 本發明的結合劑的材料包含金屬、金屬合金、塑膠材料 • (p〇lymer)、陶瓷材料、及上述材料的混合物，其中以塑膠材料 為貫施例代表，此外也可包含悍接合金材料。 本發明基板的較佳實施例為不銹鋼材質；結合劑的較佳實 施例可為樹脂材料。 本發明拋光塾修整斋可視需要變化不同的磨粒，例如拋光 墊修整器的外圈可以用粒度較小但數量較多的鑽石，内圈可以 用粒度較大但數量較少的鑽石；或是外圈可以用切削能力差， 但較耐磨，晶形完整的鑽石，内圈可以用切削能力好，但是不 201113120 耐磨’晶购好_石务細輸顆 材料相同，但拋光塾修整 内的多個磨粒簇的鑽石顆物士丨、 形狀、材料可相同或不相同。 ’'、 用夕個磨粒簇可控制拋光塾修 整裔的切削速度及磨耗率。201113120 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a dresser, and more particularly to a dresser for a CMP pad and a method of making the same. [Prior Art] Chemical Mechanical Planarization (CMP) The most attractive technology in the process of flattening the surface of uranium semiconductor wafers. In the chemical I mechanical polishing process, the function of the polishing pad is to stably and uniformly transfer the polishing liquid between the wafer and the polishing pad, and to form a convex surface on the wafer under the interaction of chemical etching and mechanical grinding. The layer is removed. In order to meet the needs of mass production of wafer processing and maintain the stability of quality, it is necessary to use the diamond dresser to correct the polishing products in the process of chemical mechanical polishing. The rough surface of the crucible 'improves its ability to accommodate _ and restores the pores on the surface of the polishing pad and its ability to hold and transport the polishing liquid. This saves polishing costs and achieves stable quality during wafer mass production. There are a variety of different trimming patents, such as the Taiwan Patent Publication 2, which discloses a dresser for trimming a wafer polishing pad, comprising: a substrate having a plurality of grooves on the upper surface of the wire plate; a fixing material filled in the a plurality of grooves; and a plurality of abrasive grains, the plurality of impurities being in the plurality of grooves by the fixing material. The plurality of grooves are arranged in a regular manner, and each of the plurality of grooves is sized to accommodate only a plurality of grooves. In this patent, only one nano-grain is used for each groove. It is not possible to arrange different sizes or different amounts of abrasive grains for each groove 201111120 to improve the dressing efficiency and service life of the dresser. Taiwan Patent No. 1,286,097 discloses an abrasive tool comprising a substrate, a plurality of abrasive particle clusters and a binder layer; a plurality of abrasive particle clusters are disposed on the surface of the substrate in a regular arrangement; the abrasive particle clusters are clustered a plurality of abrasive particles, the abrasive particle clusters are spaced apart from each other by less than 7 um, and each of the abrasive particle clusters comprises from 2 to 8 abrasive particles; and the binder layer is such that the abrasive particles are fixed to the substrate. This specialization allows 2-8 abrasive particles to aggregate into one abrasive particle cluster' but does not reveal abrasive particle clusters with smaller or more abrasive particles disposed at the outer ring of the substrate depending on different needs. Larger or smaller abrasive particles of abrasive particles are placed at the inner ring of the substrate to improve the dressing efficiency and service life of the dresser. SUMMARY OF THE INVENTION The present invention has been made in order to improve the wear resistance and cutting efficiency of a diamond cutting tool. $ _ The main purpose of the present invention is to provide a face-level dresser such that a plurality of other abrasive clusters are arranged on the working surface of the substrate, and the abrasive grains on the working surface are more or less than the outer ring. The abrasive grains of the particle size, while the abrasive grains of the inner ring on the working surface contain less or a large number of granules to enhance the resistance of the dresser, improve the cutting efficiency and prolong the service life. The polishing pad conditioner of the present invention is a dresser for a CMP polishing crucible, comprising: a substrate, which is provided with a working surface; 201113120, an abrasive grain family is divided into the substrate; the plurality of wire cutting lines respectively highlight the The working surface; the plurality of abrasive grain boxes respectively have at least one abrasive grain; and the number of abrasive grains of the t»海磨 abrasive grain cluster is decreased from the outer ring of the working surface to the t center of the working surface. Other objects and effects of the present invention will be described in detail below. [Embodiment] As shown in Figs. 1 and 2, the polishing 塾 cultivator of the first embodiment of the present invention is a CMP polishing tamper, comprising a substrate u, a plurality of grinding 12 and a fixing. The mold 13 is composed of. The substrate 11 is provided with a working surface 11〇, and the fixed mold 13 is placed on the working surface 11〇. The fixed mold 13 is provided with a plurality of penetration holes 3i corresponding to the plurality of abrasive grain clusters i 2; the plurality of penetration holes 131 respectively accommodate the plurality of abrasive grain clusters 12. The plurality of abrasive particles 12 each contain at least one abrasive grain 121. The plurality of abrasive clusters 12, the fixed mold 13 and the substrate u are fixedly bonded by the bonding agent 14; the cutting ends 12 of the plurality of abrasive clusters 12 are respectively protruded from the working surface 110. The plurality of penetration holes 131 of the embodiment have the same aperture, and the number of the abrasive grains 121 of the plurality of abrasive grains 12 is decreased from the outer ring lu of the working surface 110 toward the center 112 thereof, but a plurality of grinding 12 Chen Trail Red Face (10) The material circle ui is incremented toward its center 112. Since the polishing pad dresser 1 performs the polishing pad dressing operation, the rotation speed of the outer ring m of the working surface no is faster than the rotation speed of the center 112, so the abrasive grain 12 of the outer ring 111 of the working surface 110 is closer to the working surface 11磨 Center 112's abrasive grain entertainment 201113120 12 is easier to wear. The present embodiment reduces the number of abrasive grains 21 in the plurality of abrasive grain clusters 12 from the outer ring 111 of the working surface 110 toward the center 112 thereof, so that the wear rate of the plurality of abrasive grains 121 regardless of the outer ring 111 or near the center 112 Closer, but not as the abrasive grains in the center of the aforementioned patent can still be used, and the abrasive grains near the outer ring have been worn out and cannot be used, and the dresser must be replaced, resulting in waste, or when the dresser is not replaced. The polishing efficiency of the polishing pad is reduced. As shown in Figs. 3 and 4, the polishing pad conditioner 2 of the second embodiment of the present invention comprises a substrate 21, a plurality of abrasive clusters 22 and a fixed mold 23. The substrate 21 is provided with a working surface 210 on which the fixed mold 23 is placed. The fixed mold 23 is provided with a plurality of penetration holes 231 corresponding to the plurality of abrasive clusters 22; the plurality of penetration holes 231 respectively accommodate the plurality of abrasive clusters 22. The plurality of abrasive clusters 22 each contain at least one abrasive particle 221. The plurality of abrasive clusters 22, the fixed mold 23 and the substrate 21 are fixedly coupled by a bonding agent 24; the cutting ends 220 of the plurality of abrasive clusters 22 protrude from the working surface 210. The aperture of the plurality of penetration holes 231 of the present embodiment is decreased from the outer ring 211 of the working surface 210 toward the center 212 thereof, and the abrasive grains 221 in the plurality of abrasive clusters 22 have the same particle diameter; The number of abrasive particles 121 within the tufts 22 is diminished from the outer ring 211 of the working surface 210 toward its center 212. As described in the first embodiment, the present embodiment causes the number of abrasive grains 221 of the plurality of abrasive grain clusters 22 to be decremented from the outer ring 211 of the working surface 21〇 toward the center 212 thereof, so that the plurality of abrasive grains 221 are in the outer ring 211. Or the wear rate near the center 212 is relatively close, and the abrasive grains that are not in the center as in the aforementioned patent can still be used, and the abrasive grains near the outer ring 201113120 have been worn out, and must be more versatile, resulting in Waste, or reduce the finishing efficiency of the 塾 塾 when the dresser is not replaced. The material of the substrate of this month includes metal, metal alloy, plastic material, ceramics, carbon products, and a mixture of the above materials, preferably 胤 stainless steel material. The hybrid material of the present invention may be an artificial or non-artificial drill; δ, polycrystalline diamond (10), cubic nitriding briquette, polycrystalline cubic nitriding shed (10) ν), hardest knot • crystal, polycrystalline material, or the like A mixture of materials, etc. The mold of the turn can be any shape, thickness, or material f, and the force of the mouth-grinding abrasive can achieve the effect of fixing the abrasive grains; the material of the typical fixed mold includes metal, metal alloy, organic polymerization. (p〇lymer), ceramic material, % material, glass material, and a mixture of the above materials, wherein stainless steel is representative of the embodiment. The material of the bonding agent of the present invention comprises a metal, a metal alloy, a plastic material, a ceramic material, and a mixture of the above materials, which are represented by a plastic material, and may also comprise a bismuth bonding gold material. A preferred embodiment of the substrate of the present invention is made of stainless steel; a preferred embodiment of the bonding agent may be a resin material. The polishing crucible of the present invention may need to change different abrasive grains. For example, the outer ring of the polishing pad conditioner may use a smaller but larger number of diamonds, and the inner ring may use a larger but smaller number of diamonds; or The outer ring can be used with poor cutting ability, but it is more wear-resistant, the crystal-shaped complete diamond, the inner ring can be used for cutting ability, but it is not 201113120 wear-resistant 'crystal purchase good _ stone fine transfer material is the same, but polished 塾 trimming The diamond particles, shapes, and materials of multiple abrasive clusters may be the same or different. ’', using a cluster of abrasive particles to control the cutting speed and wear rate of the polished 塾.

本發明使多個觸磨_被剩在—基板的工作面上，工 作面上較外_磨減含有較_或較小粒徑的磨粒，而在工 作面上較内圈的磨粒簇含有較小顆或粒徑較大的磨粒，以提升 修整器的耐磨性’提升切削效率及延長使用壽命。 以上所記載，僅為利用本發明技術内容之實施例’任何熟 悉本項技藝者運用本發明所為之修飾、變化，皆屬本發明主張 之專利範圍，而不限於實施例所揭示者。 201113120 【圖式簡單說明】 圖1為本發明第一實施例的拋光墊修整器的示意圖。 圖2為圖1的AA剖面的示意圖。 圖3為本發明第二實施例的拋光墊修整器的示意圖。 圖4為圖2的BB剖面的示意圖 【主要元件符號說明】The invention enables a plurality of touches to be left on the working surface of the substrate, and the working surface is thinner than the abrasive grains containing the _ or smaller particle size, and the abrasive grains on the working surface are smaller than the inner ring. Contains smaller or larger diameter abrasive particles to improve the wear resistance of the dresser' to improve cutting efficiency and extend service life. The above description of the embodiments of the present invention is intended to cover the modifications and variations of the present invention. 201113120 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a polishing pad conditioner of a first embodiment of the present invention. FIG. 2 is a schematic view of the AA cross section of FIG. 1. FIG. 3 is a schematic view of a polishing pad conditioner of a second embodiment of the present invention. Figure 4 is a schematic view of the BB section of Figure 2 [Explanation of main component symbols]

1、2拋光墊修整器 110、210工作面 112中心 120、220切削端 13、 23固定模具 14、 24結合劑 11、 21基板 111外圈 12、 22磨粒簇 12卜221磨粒 131、231穿透孔1, 2 polishing pad dresser 110, 210 working surface 112 center 120, 220 cutting end 13, 23 fixed mold 14, 24 bonding agent 11, 21 substrate 111 outer ring 12, 22 abrasive cluster 12 221 abrasive particles 131, 231 Penetrating hole

Claims (1)

201113120 七、申請專利範圍： 1. -種抛祕修整n ’是作為CMP拋光塾的修整器者，包括： 一基板，設有一工作面； 夕個磨粒簽’分別結合該基板；該多個磨粒簇的切削端分別突 出該工作面；該多個磨粒簇分別具有至少一個磨粒； 其中該多個磨粒箱的磨粒數量由該工作面的外圈向該工作面 的中心處遞減。 2. 如申請專利範圍第丨項所述之拋級修整器，其中該多個磨粒 . 簇的磨粒的粒徑由該工作面的外圈向該工作面的中心處遞増。 3. 如申請專利範圍第2項所述之拋光墊修整器，其中該基板的曰工 ，面結合一固定模具；該固定模具設有對應於該多個磨粒簇= 多個穿透孔；該多個穿透孔分別容置該多個磨粒簇。联、 4. 如申請專利範圍第3項所述之拋光墊修整器，其中誃 孔具有相同的孔徑。 透 5. 如申請專利範圍第4項所述之拋光墊修整器，其中該多個磨; 簇、該固定模具與該基板之間藉由結合劑固定結合。 哧 ♦ 6.如申請專利範圍第1項所述之拋光墊修整器，其中該多個磨; 簇的磨粒分別具有相同的粒徑。 粒 7.如申請專利範圍第6項所述之拋光墊修整器，其中該基板的 作面結合一固定模具；該固定模具設有對應於該多個ς教簇工 多個穿透孔；該多個穿透孔分別容置該多個磨粒簇。 、 8·如申請專利範圍第7項所述之拋光墊修整器，其中該多個穿、 孔的孔徑由該工作面的外圈向該工作面的中心處遞減。透 9·如申請專利範圍第8項所述之拋光墊修整器，其中該多個磨教 簇、該固定模具與該基板之間藉由結合劑固定結合。 ’ 201113120 10. 如申請專織圍第5或9項所述之拋光墊修整^，其中該基 板的材料包含金屬、金屬合金、塑膠材料、陶製品、碳製品或 上述材料的混合其中之一的材料。 11. 如申請專利範圍第10項所述之拋光塾修整器，其中該結合劑 的材料包含金屬、金屬合金、塑膠材料、陶究材料或上述材料 的處合物其中之一的材料。 12. 如申料利_第丨丨項所述之拋缝修整器，其中該結合劑 的材料為環氧樹脂材料。 如申請專利範圍第12項所述之拋光墊修整器，其中該固定模 具的材料為選自金屬、金屬合金、有機聚合物、陶竟材料、碳 材料玻％材料或上述材料的混合物其中之一的材料。201113120 VII. The scope of application for patents: 1. - A kind of trimming n' is a trimmer for CMP polishing boring, comprising: a substrate with a working surface; a granule of the abrasive granules respectively combined with the substrate; The cutting ends of the abrasive granules respectively protrude the working surface; the plurality of abrasive granules respectively have at least one abrasive granule; wherein the plurality of abrasive granules have a number of abrasive grains from an outer circumference of the working surface to a center of the working surface Decrement. 2. The throw trimmer of claim 2, wherein the plurality of abrasive particles have a particle size of the abrasive particles that are transferred from the outer ring of the working surface to the center of the working surface. 3. The polishing pad conditioner of claim 2, wherein the substrate is joined to a fixed mold; the fixed mold is provided corresponding to the plurality of abrasive grain clusters; a plurality of penetration holes; The plurality of penetration holes respectively accommodate the plurality of abrasive clusters. 4. The polishing pad conditioner of claim 3, wherein the boring holes have the same aperture. 5. The polishing pad conditioner of claim 4, wherein the plurality of grinds; the tuft, the fixed mold and the substrate are fixedly bonded by a bonding agent. The polishing pad conditioner of claim 1, wherein the plurality of abrasive grains of the clusters have the same particle diameter. 7. The polishing pad conditioner of claim 6, wherein the surface of the substrate is combined with a fixed mold; the fixed mold is provided with a plurality of penetration holes corresponding to the plurality of martial arts clusters; A plurality of penetration holes respectively accommodate the plurality of abrasive clusters. 8. The polishing pad conditioner of claim 7, wherein the apertures of the plurality of holes and holes are decremented from an outer ring of the work surface toward a center of the work surface. The polishing pad conditioner of claim 8, wherein the plurality of grinding clusters, the fixing mold and the substrate are fixedly bonded by a bonding agent. ' 201113120 10. If the application of the polishing pad described in Item 5 or 9 is applied, the material of the substrate comprises metal, metal alloy, plastic material, ceramic product, carbon product or a mixture of the above materials. material. 11. The polishing 塾 conditioner of claim 10, wherein the material of the bonding agent comprises a metal, a metal alloy, a plastic material, a ceramic material, or a material of one of the foregoing materials. 12. The seam dresser of claim 1-3, wherein the material of the bonding agent is an epoxy resin material. The polishing pad conditioner according to claim 12, wherein the material of the fixing mold is one selected from the group consisting of a metal, a metal alloy, an organic polymer, a ceramic material, a carbon material, or a mixture of the above materials. s material.
TW098134719A 2009-10-14 2009-10-14 Polishing pad dresser TW201113120A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW098134719A TW201113120A (en) 2009-10-14 2009-10-14 Polishing pad dresser
KR1020100079712A KR101147149B1 (en) 2009-10-14 2010-08-18 Polishing pad dresser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098134719A TW201113120A (en) 2009-10-14 2009-10-14 Polishing pad dresser

Publications (1)

Publication Number Publication Date
TW201113120A true TW201113120A (en) 2011-04-16

Family

ID=44046985

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098134719A TW201113120A (en) 2009-10-14 2009-10-14 Polishing pad dresser

Country Status (2)

Country Link
KR (1) KR101147149B1 (en)
TW (1) TW201113120A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025201039A1 (en) * 2024-03-27 2025-10-02 嘉兴沃尔德金刚石工具有限公司 High-precision polishing pad conditioning tool

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116619246B (en) * 2023-07-24 2023-11-10 北京寰宇晶科科技有限公司 CMP polishing pad trimmer with diamond columnar crystal clusters and preparation method thereof
CN120228646A (en) * 2023-12-28 2025-07-01 圣戈班磨料磨具有限公司 Abrasive article and method of forming the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990081117A (en) * 1998-04-25 1999-11-15 윤종용 CMP Pad Conditioning Disc and Conditioner, Manufacturing Method, Regeneration Method and Cleaning Method of the Disc
US7840305B2 (en) * 2006-06-28 2010-11-23 3M Innovative Properties Company Abrasive articles, CMP monitoring system and method
JP2009028874A (en) * 2007-07-30 2009-02-12 Elpida Memory Inc Dresser for cmp, and cmp device using the same
KR100908017B1 (en) * 2007-11-13 2009-07-15 조선대학교산학협력단 Polishing Pad Conditioning Device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025201039A1 (en) * 2024-03-27 2025-10-02 嘉兴沃尔德金刚石工具有限公司 High-precision polishing pad conditioning tool

Also Published As

Publication number Publication date
KR101147149B1 (en) 2012-05-25
KR20110040654A (en) 2011-04-20

Similar Documents

Publication Publication Date Title
US7491116B2 (en) CMP pad dresser with oriented particles and associated methods
US8591613B2 (en) Abrasive grains having unique features
CN101068654B (en) Non-planar chemical mechanical polishing pad dresser and related methods
CN102049737B (en) Polishing pad conditioner
CN105563363B (en) A kind of method that centrifugal drying granulating technique prepares vitrified bond accumulation abrasive material
CN106756648A (en) Diamond bit composition of rod and preparation method thereof is drawn for sapphire
TW201113120A (en) Polishing pad dresser
JP2001121425A (en) Hybrid type resinoid bonded grinding wheel
US20120196514A1 (en) Methods and devices for enhancing chemical mechanical polishing pad processes
CN103009273A (en) Pyramid Grinding Disc
JP2014205225A (en) Grinding abrasive wheel for high-hardness brittle material
JPH0629401B2 (en) Abrasive grain coated with super hard material
JP3209437B2 (en) Manufacturing method of resin bonded super abrasive wheel
JPH02145261A (en) Electrodeposition grindstone
JP2006218577A (en) Dresser for polishing cloth
CN102179732A (en) Chemical mechanical polishing system and related method
JP2695683B2 (en) Resin bond super abrasive whetstone
TWI859396B (en) Abrasive article
JP4419652B2 (en) Grinding wheel and method for manufacturing the same
JPH0487775A (en) Resin bond superabrasive grain grinding wheel
TWI306048B (en)
CN201824482U (en) Wire used for cutting
TW201024030A (en) Polishing pad dresser
JP2003071723A (en) Vitrified grinding wheel
JP2007015054A (en) Resin bonded super-grinding tool and grinding wheel using the same