TW201104898A - Photovoltaic device and method for manufacturing same - Google Patents
Photovoltaic device and method for manufacturing same Download PDFInfo
- Publication number
- TW201104898A TW201104898A TW099117549A TW99117549A TW201104898A TW 201104898 A TW201104898 A TW 201104898A TW 099117549 A TW099117549 A TW 099117549A TW 99117549 A TW99117549 A TW 99117549A TW 201104898 A TW201104898 A TW 201104898A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- back surface
- light
- electrode
- semiconductor substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims abstract description 149
- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 239000012535 impurity Substances 0.000 claims abstract description 35
- 238000009792 diffusion process Methods 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000011888 foil Substances 0.000 claims abstract description 16
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 5
- 239000007772 electrode material Substances 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims description 5
- 238000005121 nitriding Methods 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 241000237502 Ostreidae Species 0.000 claims 1
- 241001674048 Phthiraptera Species 0.000 claims 1
- 239000006258 conductive agent Substances 0.000 claims 1
- 239000006185 dispersion Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000008267 milk Substances 0.000 claims 1
- 235000013336 milk Nutrition 0.000 claims 1
- 210000004080 milk Anatomy 0.000 claims 1
- 235000020636 oyster Nutrition 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 30
- 230000006798 recombination Effects 0.000 description 26
- 238000005215 recombination Methods 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 20
- 238000007639 printing Methods 0.000 description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000002161 passivation Methods 0.000 description 16
- 229910052709 silver Inorganic materials 0.000 description 16
- 239000004332 silver Substances 0.000 description 16
- 238000007789 sealing Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 10
- 239000002003 electrode paste Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005728 strengthening Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- -1 nitride nitride Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 101001002709 Homo sapiens Interleukin-4 Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 102100020941 Interleukin-4 Human genes 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- QZLIUFNMYYCGQN-UHFFFAOYSA-N [Ge].[P] Chemical compound [Ge].[P] QZLIUFNMYYCGQN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007803 itching Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2009/061425 WO2010150358A1 (ja) | 2009-06-23 | 2009-06-23 | 光起電力装置およびその製造方法 |
| PCT/JP2010/058646 WO2010150606A1 (ja) | 2009-06-23 | 2010-05-21 | 光起電力装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201104898A true TW201104898A (en) | 2011-02-01 |
Family
ID=43386153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099117549A TW201104898A (en) | 2009-06-23 | 2010-06-01 | Photovoltaic device and method for manufacturing same |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW201104898A (ja) |
| WO (2) | WO2010150358A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103597603A (zh) * | 2011-06-10 | 2014-02-19 | 吉坤日矿日石能源株式会社 | 光电转换元件 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130133741A1 (en) * | 2010-10-05 | 2013-05-30 | Mitsubishi Electric Corporation | Photovoltaic device and manufacturing method thereof |
| CN103155161B (zh) * | 2010-10-20 | 2016-10-26 | 三菱电机株式会社 | 光伏装置及其制造方法 |
| WO2014112053A1 (ja) * | 2013-01-16 | 2014-07-24 | 三菱電機株式会社 | 太陽電池セルおよびその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0595127A (ja) * | 1991-10-02 | 1993-04-16 | Sharp Corp | 光電変換素子の製造方法 |
| JP2758749B2 (ja) * | 1991-10-17 | 1998-05-28 | シャープ株式会社 | 光電変換装置及びその製造方法 |
| JP2931498B2 (ja) * | 1993-04-21 | 1999-08-09 | シャープ株式会社 | 太陽電池及びその製造方法 |
| JP3193287B2 (ja) * | 1996-02-28 | 2001-07-30 | シャープ株式会社 | 太陽電池 |
| JP2000138386A (ja) * | 1998-11-04 | 2000-05-16 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法およびこの方法で製造された太陽電池 |
| JP2000323735A (ja) * | 1999-05-10 | 2000-11-24 | Mitsubishi Electric Corp | 光起電力装置の製造方法及び光起電力装置 |
| JP2004006565A (ja) * | 2002-04-16 | 2004-01-08 | Sharp Corp | 太陽電池とその製造方法 |
| JP2004128438A (ja) * | 2002-08-01 | 2004-04-22 | Sharp Corp | 半導体デバイスおよびその製造方法 |
| JP2006073897A (ja) * | 2004-09-03 | 2006-03-16 | Sharp Corp | 太陽電池の製造方法 |
| JP2008204967A (ja) * | 2005-05-31 | 2008-09-04 | Naoetsu Electronics Co Ltd | 太陽電池素子及びその製造方法 |
| JP5376752B2 (ja) * | 2006-04-21 | 2013-12-25 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池 |
-
2009
- 2009-06-23 WO PCT/JP2009/061425 patent/WO2010150358A1/ja not_active Ceased
-
2010
- 2010-05-21 WO PCT/JP2010/058646 patent/WO2010150606A1/ja not_active Ceased
- 2010-06-01 TW TW099117549A patent/TW201104898A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103597603A (zh) * | 2011-06-10 | 2014-02-19 | 吉坤日矿日石能源株式会社 | 光电转换元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010150358A1 (ja) | 2010-12-29 |
| WO2010150606A1 (ja) | 2010-12-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102414833B (zh) | 太阳能电池单元及其制造方法 | |
| TW201203588A (en) | Solar cell including sputtered reflective layer and method of manufacture thereof | |
| CN101199060B (zh) | 太阳电池元件和太阳电池元件的制造方法 | |
| JP2009147070A (ja) | 太陽電池の製造方法 | |
| WO2008039067A2 (en) | Method of manufacturing crystalline silicon solar cells with improved surface passivation | |
| TW201210052A (en) | Back junction solar cell with selective front surface field | |
| CN106374009A (zh) | 一种钝化接触的ibc电池及其制备方法和组件、系统 | |
| TW200818529A (en) | Thin-film diode structure using a sacrificial doped dielectric layer | |
| JP2010147324A (ja) | 太陽電池素子および太陽電池素子の製造方法 | |
| JP2008112848A (ja) | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 | |
| WO2011074280A1 (ja) | 光起電力装置およびその製造方法 | |
| TW201218394A (en) | Photovoltaic device and method for manufacturing same | |
| JP2024112320A (ja) | 太陽電池 | |
| TW201104898A (en) | Photovoltaic device and method for manufacturing same | |
| JP5323827B2 (ja) | 光起電力装置およびその製造方法 | |
| TW201216484A (en) | Photovoltaic device and method for manufacturing same | |
| TWI427808B (zh) | Production method of back electrode solar cell | |
| CN114639742A (zh) | 一种两结太阳能电池及其制备方法 | |
| CN114914328B (zh) | 一种双面太阳能电池及其制备方法 | |
| CN111403551A (zh) | 一种高效单晶硅perc太阳能电池的制备方法 | |
| JP5452755B2 (ja) | 光起電力装置の製造方法 | |
| TW201205828A (en) | Silicon based solar cell with a heterojunction structure and the manufacturing method thereof | |
| TW200849627A (en) | Photovoltaic cell with shallow emitter | |
| JP4955367B2 (ja) | 単結晶シリコン太陽電池の製造方法 | |
| CN120239367B (zh) | 太阳能电池片及其制备方法和光伏组件 |