201033606 六、發明說明： 【發明所屬之技術領域】 本發明有關一種對於影像裴置用之光罩之 均進行檢查的圖案檢查方法及圖案檢查裝置，該=不 透明基板上形成有由單位圖案周期性排列所 複圖案。本發明亦有關-種光罩製造方法，該， ，圖案檢查紐來製造光罩。本發⑽㈣—種圖= 寫方法，财法㈣實補光罩製 光 來將轉寫圖案轉寫到轉寫對象。力輯h之先罩 【先前技術】 ，已知規定的遮 blank)之圖案是否正確所斷轉寫到遮罩坯料(mask 項目例如有圖案形狀計圖案。具代表性的品質 Dimension)精度、圖案又、圖案尺寸（CD : Critical 的製品上發生誤動作，、罝精度。為了避免在安裝完成 置用基板，因此，各品I以使正確的電路圖案轉寫到裝 樣，亦即必須製造眘暂 項目必須滿足規定的品質仕 以檢查在上述重複圖以缺陷的光罩。另-方面’用 的圖案檢查方法或圖案:^周期不規則（或重複誤差） 一、二等文件。 一檢一裝置例如揭露於專利文件 專利文件一所記 置使光罩引起之規定階叙=檢查方法及圖案檢查裝 1上之繞射光選擇性入射成 3 201033606 統。接ί，合成已入射的繞射光，檢測因此 獲付的像，以檢查CD缺陷等。 專利文件二所記載之圖案檢查方 置將辦於光罩進行傅立葉轉換 7圖案一裝 定頻率m卞八‘、i 得的空間頻譜中之規 對於井篇士之去去除分析去除後之空間頻譜， 對於先罩中之重複誤差_進行定量評價(檢查）。 ❹ 專利文件一：特開2005-233869號公報 專利文件二：特開平8-194305號公報 【發明内容】 圖荦Ϊ單之製造Γ之領射，對於形成於光罩之轉寫 2必要情況進行缺陷修正，然後出 貨前在衫像裝用之光罩之量產時，重要的是在出 知月』，不僅須判定圖案形狀缺陷，還須 有無，藉以簡易而快速獲得品質保證。 八= 一般絲，鮮缺陷之基準是根據 (疋為了避免安裝完成的製品發生 板轉寫到正確的電路圖案所需的 用基 述其準5^ 嗯知)用之光罩滿足上 考慮上述般缺陷之相關品質仕樣光罩還應該 規則性的誤差。該誤差即便滿足異，的 仕樣，也未必具有足夠的製品性能。忽略這種 4 201033606 造的影像裝置之影像可能會發生該誤差引起之顯示不 均。例如：就算是以構成重複圖案之單位圖案來說不會 影響品質之微小線寬或位置偏差的誤差，但以區域來看 時，有的情況下，如果以某規則性排列許多個或在某部 分集中許多個時’在所謂上述顯示裝置的最終製品中， 會被視覺辨認為和周圍不同的顏色或濃度，就好像被識 別為一種缺陷。這些顯示不均是降低影像裝置之畫質的 原因’所以不希望發生。本說明書中，就算是以單位圖 ❹ 案來說不足以被判斷為缺陷之微細誤差，但在對於一定 面積所含之重複圖案進行評價時，將造成顯示不均等不 良情況的誤差稱為「圖案不均」。 專利文件一所記載之圖案檢查方法及圖案檢查裝 置中’例如使用規定的檢查對象獲得高階繞射像，結果 未發現不良情況’即使如此’仍無法判斷該檢查對象是 否符合品質保證。這是因為該文件中’為了觀察繞射像 之實像，於規定位置配置拍攝面，但有的情況在該拍攝 ❹ 面無法檢測到圖案不均。亦即’就算是同一檢查對象， 依據應檢查之缺陷種別能檢測的檢查條件（例如焦點 (foucus)條件）不同’所以必須變更檢查條件實施同一檢 查對象之檢查複數次’該檢查條件例如是改變光罩與對 物透鏡之間隔以調整焦點。因此，即使有判定缺陷之有 無’仍須依據複數個檢查條件進行檢查，檢查時間變 長’在前置時間（lead time)方面是不利的。再者，每種 缺陷都存在檢查資料，所以也增加資料解析裝置侧之處 理負荷。 5 201033606 專利文件二所記載之圖案檢查方法及圖案檢查裝 置中，以高感度偵知光罩之缺陷，所以使用空間濾波器 選擇性去除單位胞之内部及理想的重複周期之相關資 訊。然而，針對每個作為被檢體之光罩之圖案形狀都須 準備過滤環(filter ring)用的遮罩且加以設置，此外，難 以做到去除低階繞射光之雜訊並以足夠的感度進行檢 測，所以無法輕易採用該方法及裝置。 如此，習知型圖案檢查方法及圖案檢查裝置有檢查 之冗長性及裝置設定之困難性等問題，不適合簡易且快 速地檢查光罩之圖案不均之有無。 本發明有鑒於上述緣故而發明，其目的在於提供一 種圖案檢查方法及圖案檢查裝置，適合於簡易且快速地 檢查影像裝置用之光罩之圖案不均之有無。本發明還提 供一種光罩製造方法，實施該圖案檢查方法來製造光 罩。本發明更提供一種圖案轉寫方法，使用實施該光罩 製造方法所製造的光罩將轉寫圖案轉寫到轉寫對象。 解決上述課題之本發明一形態之圖案檢查方法有 關一種檢查遮罩圖案不均之方法，該光罩之透明基板上 形成有由單位圖案周期性排列所構成之重複圖案，該圖 案檢查方法具有以下之特徵。亦即，該圖案檢查方法包 括：照射步驟，藉由規定的光束照射重複圖案；傅立葉 轉換像檢測步驟，檢測因以光束照射重複圖案而產生之 繞射光所對應之傅立葉轉換像；以及圖案不均判定步 驟，根據檢測出之傅立葉轉換像來判定光罩之圖案不均 6 201033606 之有無。傅立葉轉換像檢測步驟中，為了使光罩之圖案 不均所對應之傅立葉轉換像、與正常圖案所對應之傅立 葉轉換像在空間上分離，檢喊射光巾駭的高階繞射 光所對應之傅立葉轉換像。 如此’觀測傅立葉轉換像而非光罩之實像，藉此能 簡易且快速關定光罩之®案糾之有無，快速獲得光 罩之品質保證，因而能提高光罩之製造效率。[Technical Field] The present invention relates to a pattern inspection method and a pattern inspection apparatus for inspecting a mask for image mounting, which is formed by a periodic pattern of a unit pattern Arrange the complex patterns. The present invention is also related to a method of manufacturing a reticle, which is to fabricate a reticle. This (10) (four) - kind of map = write method, financial method (four) real fill mask light to transfer the transfer pattern to the transfer object. The first cover of the force set h [previous technique], it is known that the pattern of the specified blank is correctly written and written to the mask blank (the mask item has a pattern shape meter pattern, for example, a representative quality Dimension) precision, pattern Also, the pattern size (CD: Critical product malfunctions, 罝 precision. In order to avoid the installation of the substrate after installation, therefore, each product I to transfer the correct circuit pattern to the sample, that is, must be made cautious The item must meet the specified quality to check the mask in the above repeated pattern. The pattern inspection method or pattern used in the other side: ^ cycle irregularity (or repeated error), first and second documents. For example, the patent document disclosed in the patent document records the prescribed order caused by the reticle = the inspection method and the diffracted light on the pattern inspection device 1 are selectively incident into 3 201033606. Then, the incident diffracted light is synthesized, and the detection is performed. Therefore, the image is paid to check for CD defects, etc. The pattern inspection method described in Patent Document 2 will be performed in the reticle for Fourier transform 7 pattern, a set frequency m卞8', i The rules in the obtained spatial spectrum are used to remove the spatial spectrum after the analysis and removal, and the quantitative error (check) is repeated for the repeated error in the first cover. 专利 Patent Document 1: JP-A-2005-233869 (2) Unexamined-Japanese-Patent No. 8-194305 [Abstract] The manufacturing of the 荦Ϊ 荦Ϊ , , , , , , , , , , 领 领 领 领 领 领 领 领 领 领 领 领 领 领 领 领 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷When the cover is mass-produced, it is important to know the shape of the pattern, not only to determine the shape defect, but also to have the quality assurance. Easy to quickly obtain the quality assurance. Eight = general silk, the basis of fresh defects is based on (疋 in order to avoid installation The finished product plate is transferred to the correct circuit pattern. The reticle used to meet the above-mentioned defects is also a regular error. Even if the error is different, the product does not necessarily have sufficient product performance. Ignoring the image of the image device made by 4 201033606, the display may be uneven due to the error. For example: The unit pattern constituting the repeating pattern does not affect the error of the small line width or the positional deviation of the quality, but in the case of the area, in some cases, if many are arranged in a certain regularity or concentrated in a certain part In the final product of the above-mentioned display device, it is visually recognized as a color or concentration different from the surrounding, as if it is recognized as a defect. These display unevenness is the reason for reducing the image quality of the image device. In the present specification, even if it is a small error that is judged to be a defect in the unit map, when it is evaluated for a repeating pattern included in a certain area, it will cause an error of display unevenness. In the pattern inspection method and the pattern inspection device described in the patent document, for example, a high-order diffraction image is obtained using a predetermined inspection object, and as a result, no defect is found. Even if it is not, it is impossible to determine whether the inspection object is Meet the quality assurance. This is because the image is placed at a predetermined position in order to observe the real image of the diffracted image, but in some cases, pattern unevenness cannot be detected on the photographing surface. In other words, even if it is the same inspection object, the inspection conditions (for example, the focus (foucus condition)) that can be detected according to the type of defect to be inspected are different, so it is necessary to change the inspection condition to perform the inspection of the same inspection object. The mask is spaced from the objective lens to adjust the focus. Therefore, even if it is judged whether or not the defect is present, it is necessary to perform inspection according to a plurality of inspection conditions, and the inspection time becomes long, which is disadvantageous in terms of lead time. Furthermore, inspection data exist for each defect, so the load on the side of the data analysis device is also increased. 5 201033606 In the pattern inspection method and pattern inspection device described in Patent Document 2, the defect of the mask is detected with high sensitivity, so the spatial filter is used to selectively remove the information of the inside of the unit cell and the ideal repetition period. However, it is necessary to prepare a mask for a filter ring for each pattern shape of the reticle as the subject, and it is difficult to remove the noise of the low-order diffracted light with sufficient sensitivity. The test is performed, so the method and device cannot be easily adopted. As described above, the conventional pattern inspection method and the pattern inspection device have problems such as lengthy inspection and difficulty in setting the device, and are not suitable for easily and quickly checking the presence or absence of pattern unevenness of the mask. The present invention has been made in view of the above circumstances, and an object thereof is to provide a pattern inspection method and a pattern inspection device which are suitable for easily and quickly checking the presence or absence of pattern unevenness of a mask for an image device. The present invention also provides a reticle manufacturing method which is implemented to fabricate a reticle. The present invention further provides a pattern transfer method for transferring a transfer pattern to a transfer object using a photomask manufactured by the photomask manufacturing method. A pattern inspection method according to an aspect of the present invention for solving the above-mentioned problems relates to a method of inspecting a pattern unevenness in which a repeating pattern composed of a periodic arrangement of unit patterns is formed on a transparent substrate of the mask, and the pattern inspection method has the following Characteristics. That is, the pattern inspection method includes: an illuminating step of illuminating the repeating pattern by a predetermined beam; and a Fourier transform image detecting step of detecting a Fourier transform image corresponding to the diffracted light generated by irradiating the repeating pattern with the light beam; and pattern unevenness In the determination step, the presence or absence of the pattern unevenness of the mask 6 201033606 is determined based on the detected Fourier transform image. In the Fourier transform image detecting step, in order to spatially separate the Fourier transform image corresponding to the pattern unevenness of the reticle and the Fourier transform image corresponding to the normal pattern, the Fourier transform corresponding to the high-order diffracted light of the illuminating frame is detected. image. Thus, the observation of the Fourier transform image instead of the real image of the mask can easily and quickly determine the presence or absence of the mask, and quickly obtain the quality assurance of the mask, thereby improving the manufacturing efficiency of the mask.
本發明之随檢查方法巾，為了使光罩之圖案不均 所對應之傅立葉轉換像、與正常圖案所對應之傅立葉 換像在空Pd上分離’較佳為例如利用階數之絕對値為 20〜700的高階繞射光來生成傅立葉轉換像。 解決上述課題之本發明另一面之圖案檢查方法有 關一種檢查遮罩圖案不均之方法，該光罩之透明基板上 形成有由單位圖案周期性排列所構成之重複圖案，該圖 案檢查方法具有以下之特徵。亦即，該圖案檢查方法具 有.照射步驟，藉由規定的光束照射重複圖案；傅立 轉換像檢測步驟，檢測因以光束照射重複圖案而產生之 繞射光所對應之傅立葉轉換像；以及圖案不均 驟’根據檢測出之傅立葉轉換像判定光罩之圖案不 有無二在光权波長定義為λ(單位：㈣、單位圖案之 間距疋義為ω(早位：㈣、包括圖案不均之該單位^ 之間，定義為ω’(單位：㈣、光學系統之焦點距離定^ 為f(單=mm)、傅立葉轉換像被檢測之傅立葉轉換面 之分解能定義為p(單位：mm)、Q階之繞射光與n階之 7 201033606 繞射光所成之角度定義為θη(單位：deg)的情況，傅立葉 轉換像檢測步驟中，檢測繞射光中滿足以下條件之η階 之繞射光所對應之傅立葉轉換像。 f(tan(A0n))>p Δθη=8Ϊη'1(ηλ/ω) — 8ίη'1(ηλ/ω,) 在此，在傅立葉轉換像被檢測之傅立葉轉換面之法 線、與照射步驟中照射光束之照明光學系統之光軸所成 的角度定義為θί之情況，本發明之圖案檢查方法較佳為 滿足 0°<θί<90°。 由於須生成傅立葉轉換像，所以照射步驟中照射之 光束較佳為至少在空間上實質同調（coherent)且為單波 長之平行光束。 圖案不均判定步驟中，對於傅立葉轉換像檢測步驟 中檢測出之傅立葉轉換像與規定的參考像（reference image)進行比較，根據比較結果自動判定光罩之圖案不 均之有無’該圖案不均判定步驟有利於提高檢查效率。 本發明之圖案檢查方法較佳為在能同時檢查的檢 查區域比光罩之檢查對象全域更窄的情況，使光罩移動 並連續掃描檢查區域，同時對於該檢查區域實施照射步 驟、傅立葉轉換像檢測步驟及圖案不均判定步驟各步 驟’以判定光罩之圖案不均之有無。 此外，解決上述課題之本發明〆形態之光罩製造方 法係於遮罩坯料形成規定的遮罩圖案以製造光罩的方 法，其特徵為包括一步驟：實施上述記載之圖案檢查方 8 201033606 乂判疋也成有遮罩圖案之光罩之圖案不均之有無。 法之=為本發明—形態之圖案轉寫方 之光草來將遮丄上寫製板造方法所製造 置有::査明-形態之圈案檢查裝 形成有由單位圖=期』:2，該光罩之透明基板上 案檢查裝置具有以、下』=列:f成之重複圖案、該圖 有:照射手段，藉由二二=查裝置具 檢測出之傅立葉轉換像判定遮罩=不t 像、與正常圖案 應之;;i::像檢測繞射光中規定的高階繞射光所對 本發明之圖案檢查裝置中，為了使 換紅傅立葉轉 2 0〜700的高p_総生成傅立葉轉H之絕對値為 此外，解決上述課題之本發明另一面之 置有關檢查遮罩圖案不均的裝置，該光罩明 ===期性排列所構成之重複圖案 案檢-裝置具有以下之特徵。亦即，該圖案檢查裝置具 9 201033606 ❹ ❹ 有：照射手段，藉由規定的光束照射重複圖案；傅立葉 轉換像檢測手段，檢測藉由照射手段照射重複圖案時產 生之繞射光所對應之傅立葉轉換像；以及圖案不均判定 手段，根據檢測出之傅立葉轉換像判定遮罩圖案不均之 有無。在光束之波長定義為χ(單位：μιη)、單位圖案之 間距定義為ω(單位：μιη)、包括圖案不均之該單位圖案 之間巧定義為ω’（單位：μπι)、光學系統之焦點距離定義 為f(單位：mm)、傅立葉轉換像被檢測之傅立葉轉換面 之分解能定義為p(單位：mm)、〇階之繞射光與η階之 繞射光所成之角度定義為θη(單位：deg)的情況，傅立 轉換像檢測手段檢測繞射光中滿足以下條件之n階譆 射光所對應之傅立葉轉換像。 ’ f(tan(A0n))>p Δθη^ΐη^ηλ/ω)-sm1^/®^ 本發明之圖案檢查震置較佳為上述之照射手段且 = =學系統’在傅立葉轉換像被檢 利之傅立㈣換φ之树、與照明光㈣狀光 的角度定義為0i的情況滿足〇。<0丨<9〇。。 成 在此’藉由上述之照射手段照射之光 在空間上實質同調且為單波長之平行光束。為至） 此外，上述之圖案不均狀手段也可以對於 f轉換像檢測手段檢測出之傅立葉轉換像與規定 考像進灯比較，減吨料自 ^參 有無。 u系不岣之 手 本發明之圖案檢查裝置更具有檢查區域婦卜 201033606 5之==描手段在能同時檢查的檢查區域比光 檢查區域。王域更窄的情況’使光罩移動並連續掃插 剧、本5,之圖案檢查方法、圖案檢查裝置及光墓 製以方法’能簡易且快速蚁光罩之圖案 快速獲得光罩之品質保證，所以提高光罩之製造^並 【實施方式】 以下參照圖式說明本發明之實施形態之圖案檢查 方法、圖鎌查裝置、光罩製造方法及圖轉寫方法了 此外，各®巾’為了說明之方便，對於支撐各種組成零 件的支撐部省略了局部緣示。In the inspection method according to the present invention, in order to separate the Fourier-converted image corresponding to the pattern unevenness of the mask and the Fourier-transformed image corresponding to the normal pattern on the empty Pd, it is preferable that the absolute value of the order is 20, for example. A high-order diffracted light of ~700 to generate a Fourier transform image. A pattern inspection method according to another aspect of the present invention, which solves the above problems, relates to a method of inspecting a pattern unevenness in which a repeating pattern composed of a periodic arrangement of unit patterns is formed on a transparent substrate of the mask, and the pattern inspection method has the following Characteristics. That is, the pattern inspection method has an irradiation step of irradiating a repeating pattern by a predetermined beam; and a Fourier transform image detecting step of detecting a Fourier transform image corresponding to the diffracted light generated by irradiating the repeating pattern with the light beam; and the pattern is not According to the detected Fourier transform image, the pattern of the reticle is determined to be λ (the unit: (4), the distance between the unit patterns is ω (early position: (four), including pattern unevenness). The unit ^ is defined as ω' (unit: (4), the focus distance of the optical system is set to f (single = mm), and the Fourier transform image is detected as the decomposition energy of the Fourier transform surface is defined as p (unit: mm), Q The diffracted light of the order and the nth order 7 201033606 The angle formed by the diffracted light is defined as θη (unit: deg), and in the Fourier transform image detecting step, the diffracted light of the n-th order satisfying the following conditions in the diffracted light is detected. Fourier transform image. f(tan(A0n))>p Δθη=8Ϊη'1(ηλ/ω) — 8ίη'1(ηλ/ω,) Here, the normal of the Fourier transform surface of the Fourier transform image is detected And irradiation in the irradiation step The angle formed by the optical axis of the illumination optical system of the beam is defined as θί, and the pattern inspection method of the present invention preferably satisfies 0° < θί < 90°. Since the Fourier transform image is to be generated, the illumination step is irradiated The light beam is preferably a parallel beam that is at least spatially coherent and is a single wavelength. In the pattern unevenness determining step, the Fourier transform image detected in the Fourier transform image detecting step and the predetermined reference image are reference images. For comparison, the presence or absence of the pattern unevenness of the mask is automatically determined based on the comparison result. The pattern unevenness determining step is advantageous for improving the inspection efficiency. The pattern inspection method of the present invention preferably checks the inspection area at the same time as the mask inspection. In the case where the object is narrower in the whole region, the mask is moved and the inspection region is continuously scanned, and the irradiation step, the Fourier transform image detecting step, and the pattern unevenness determining step are performed on the inspection region to determine whether the pattern unevenness of the mask is present. Further, the mask manufacturing method of the present invention which solves the above problems is a mask blank. A method of manufacturing a mask by forming a predetermined mask pattern, comprising the step of performing the above-described pattern inspection method 8 201033606 to determine whether or not the pattern of the mask having the mask pattern is uneven. = For the invention - the pattern of the pattern is transferred to the light of the grass to produce the concealer on the plate making method:: the identification - the shape of the circle inspection installation is formed by the unit diagram = period: 2, the light The transparent substrate on-chip inspection device has a repeating pattern of "down" = column: f, and the figure includes: an irradiation means, and the Fourier transform image detected by the second = check device determines the mask = not t image In the pattern inspection device of the present invention, the high-order diffracted light specified in the diffracted light is used to detect the high p_総 of the red-over Fourier to 20 to 700, and the Fourier-to-H is generated. In addition, in the other aspect of the present invention, which solves the above-described problems, the apparatus for inspecting the pattern unevenness of the mask is characterized in that the repeating pattern inspection apparatus having the reticle formation === period arrangement has the following features. That is, the pattern inspection device 9 201033606 ❹ ❹ has: an irradiation means for irradiating a repeating pattern by a predetermined light beam; and a Fourier transform image detecting means for detecting a Fourier transform corresponding to the diffracted light generated when the repeating pattern is irradiated by the irradiation means The image and the pattern unevenness determining means determine the presence or absence of the mask pattern unevenness based on the detected Fourier transform image. The wavelength of the light beam is defined as χ (unit: μιη), the distance between unit patterns is defined as ω (unit: μιη), and the unit pattern including pattern unevenness is defined as ω' (unit: μπι), optical system The focal length is defined as f (unit: mm), the decomposition energy of the Fourier transform surface detected by the Fourier transform image is defined as p (unit: mm), and the angle between the diffracted light of the 〇 order and the diffracted light of the nth order is defined as θη ( In the case of unit: deg), the Fourier transform image detecting means detects a Fourier transform image corresponding to the nth order pupil light satisfying the following conditions in the diffracted light. 'f(tan(A0n))>p Δθη^ΐη^ηλ/ω)-sm1^/®^ The pattern check of the present invention is preferably the above-described illumination means and ==the system is in the Fourier transform image It is satisfied that the angle of the φ tree and the illumination light (four) light is defined as 0i. <0丨<9〇. . The light irradiated by the above-described illumination means is spatially substantially coherent and is a single-wavelength parallel beam. Further, the above-described pattern unevenness means may be used to compare the Fourier transform image detected by the f-conversion image detecting means with the predetermined image-introducing lamp, and to reduce the amount of material to be used. u The hand is not in the hand. The pattern inspection device of the present invention has an inspection area. 201033606 5 == The description means that the inspection area can be simultaneously inspected than the inspection area. The narrower situation of the kingdom's movement of the reticle and continuous sweeping of the drama, the 5th, the pattern inspection method, the pattern inspection device and the method of the light tomb system can quickly obtain the quality of the reticle by the pattern of the simple and fast ant hood. In the following, the pattern inspection method, the image inspection device, the mask manufacturing method, and the image transfer method according to the embodiment of the present invention are described below with reference to the drawings. For convenience of explanation, the local edge is omitted for the support portion supporting the various component parts.
本實施形態中作為檢查對象的光罩是曝光用的遮 罩，用以製造例如FPD(Flat Panel Display，例如是液晶 顯示裝置）、電«顯示裝置、EL(Electro Luminescencr) 顯示裝置、LED(Light Emitting Diode)顯示裝置、 DMD(Digital Mirror Device)顯示裝置等影像裝置用的基 板。這種光罩係於一邊例如超過lm的大型方形基板上 形成有一個或複數個影像裝置用的轉寫圖案而成。各個 轉寫圖案含有重複圖案’該重複圖案係許多的相同圖案 重複形成而成。 第一圖概略繪示本實施形態之圖案檢查裝置1整體 之結構。圖案檢查裝置1之結構適合檢查光罩10之圖 案不均’於該光罩10之透明基板11之表面形成有重複 201033606 圖案12。本實施形態中’從作為被檢體的光罩10之背 面側（沒有圖案的一側）照射光，在表面（圖案形成面）側受 光，詳細内容將於後述。在另一實施形態中，也可以從 光罩1〇之表面側照射光，在背面側受光。 說明本實施形態中作為檢查對象之光罩10之製造 方法。光罩係歷經遮罩达料製造程序、光阻圖案形 成程序、遮罩圖案形成程序、圖案缺陷檢查程序之各程 魯 序所製造。此外，檢查對象可以為上述光罩10之中間 體，亦即形成有光阻圖案之物體或是使光阻圖案成為遮 罩而形成遮罩圖案的物體（光阻圖案剝離前之物體）。在 遮罩圖案形成之前階段之基板為檢查對象的情況，可以 變更觀察穿透光之第一圖之裝置，觀察反射光進行檢 查。 遮罩坯料製造程序中’於透明基板11之表面形成 遮光膜等薄膜。例如合成石英玻璃基板等適合當作透明 基板11之材料。此外’例如鉻等具有遮光性之材料或 ® 半透光性材料適合當作構成重複圖案12之薄膜之材 料。於該薄膜上塗布光阻而形成光阻膜’藉此完成遮罩 坯料。接著，光阻圖案形成程序中，將描綠機所產生之 雷射光束照射到遮罩趣料之光阻膜。使用光柵描繪 (raster drawing)方式等任意之描繪方式施以描繪處理， 將規定的圖案曝光到先阻膜。將規定的圖案曝光後，藉 由顯影依據所使用之光阻(正光阻或負光阻)選擇性去除 描繪部或非描繪部而形成光阻圖案。遮罩圖案形成程序 中，使光阻圖案成為遮罩，蝕刻薄膜，而形成重複圖案 12 201033606 (遮光膜圖案）12。接著，去除殘存光阻。光罩1〇中，去 除殘存光阻後，實施圖案缺陷檢查程序以作為光罩1〇 之製造程序之-環。此外，上述光罩1G可以為將單層 之遮光膜圖案化而成的所謂二元式光罩（binary爪沾幻， 上述光罩10也可以為將層疊的遮光膜或半透光膜分別 圖案化而成的多色調光罩（multi_t〇nemask)。在將層疊膜 =案化的情況1遮罩蝴製造程序到遮罩圖案形成程 序之上述光微影程序實施複數次。 陷之:ί缺中=於各個圖案進行形狀缺 述光阻去除後，或修正處理等。再者’上 後，對;in 4攻圖案缺陷檢查進行修正處理之 傻對於先罩10進行圖案不 查，將上述光罩10配置⑽·檢查。Λ 了進仃該檢 缺陷檢查程料檢查合格的 案轉有案 10實施圖案轉寫程序。圖 像裝置用的基板之光阻膜，殳L之轉寫圖案：寫到影 成於影像裝置用的基板Ϊ表=轉寫圖*之畫素圖案形 顺晶趙或是相向基板、彩色遽光片等 之結構，該圖案檢查裝 以檢查光罩10之圖案不 均 其次，說明圖案檢查裝置1 置1在圖案缺陷檢查程序中用 201033606 ^罩Η)歷經遮罩圖案（或光阻圖案)形成程序後，如 台，並將所光不罩支it t2二载台2〇例如架構為ΧΥ載 本說明書中，將第一圖；^ Υ方向能移動自如地支撐。 :兄月書中’將第一圖和紙面垂直的方 向，將和X方向直交且互相直交的二方義為Χ ^ 及Ζ方向。依據該定義，載台 又義為γ方向 有重複圖案12之光罩10之表面0「支撐成形成 ❿ 12a」。）與XY平面成平行。此外，^圖 成其光軸ΑΧ與Z軸成平行。 裝置4G被支撑 圖案檢查裝置1中，必須藉由拍 來自照明裝置3 0之照射光所^置4 0拍攝被 不妨礙照射光，所以載台/〇“所之像。為了 框狀，僅支揮光罩10之外周部分、。有之支撐體例如形成 此移動(掃描)基於γ方向移動，藉 視野，架構成使照明裝置3〇 為了知描檢一 2。在X方向或Y方向能置移攝裝置4〇相對於載台 構。戶=示圖案檢查裝置1之主要部分之結 光興季统32 $人照明裝置30具有光源部31及照明 光源部31的光源例如為‘昭射至少在 空間ί實質同調且為單波長之光的光源。：種 以使用例如半導體雷射等雷射。 ^ 照明光學系統32配置於光罩10與光源部31之間。 201033606 照明光學系統32使來自光源部31之同調光平行化並以 入射角θί(單位：deg)入射透明基板1卜此外，第二圖中， 為了使圖式明瞭化，省略了在透明基板11内部行進的 光線之繪示。 光源部31及照明光學系統32配置、架構成入射角 0i(依據別的表達方式，後述之傅立葉轉換面之法線（光 軸AX)與照明光學系統32之光軸所成的角度)例如落入 0°<θί<90°之範圍（更佳為2〇°<0i<8〇°之範圍）。照明光學 ❿ 系統32至少照射圖案形成面12a上一部分之區域(例如 約φ60〜70mm之區域），該圖案形成面12a包括基於拍攝 裝置40之檢查視野。使用架構成使照射光斜入射光罩 10的裝置，藉此能利用入射角所對應之所期望階數之繞 射光來容易地檢測例如液晶顯示裝置製造用等的顯示 裝置上發生之圖案不均。 透明基板11係兩面為平行平面之光學基板。因此， 同調光從透明基板11以射出角0i(亦即和入射角θί相同 φ 的角度)射出。圖案形成面12a被射出角θί之同調光所 照射時，形成於圖案形成面12a之周期性構造（亦即重複 圖案12)引起繞射光。在此，同調光與拍攝裝置40之光 軸AX成一角度。因此，包括0階之低階繞射光朝拍攝 裝置40所在方向之不同方向繞射。在與拍攝裝置40之 光轴AX平行的光路上，有與〇階光成角度θη(單位： d e g)的-η階附近之高階繞射光行進。在拍攝裝置4 0所具 有之成像透鏡41實質上僅有規定階數及比該規定階數 更高階（絕對値較大)之繞射光入射。 15 201033606 光罩ίο之典型圖案不均相對於正常圖案是微細 的。為了精度良好地進行缺陷檢查，較佳為利用包括物 體微細構造之相關資訊的高階繞射光。因此，圖案檢查 裝置1架構成排除低階繞射光同時利用高階繞射光來檢 查光罩10之圖案不均之有無。 拍攝裝置40是面掃描照相機(area camera)，該面掃 描照相機拍攝在被照明光學系統32照射之圖案形成面 12a上產生之繞射光。拍攝裝置40配置成使成像透鏡41 之物體侧焦點面位於圖案形成面12a。此外，拍攝裝置 4〇具有固體拍攝元件42(例如CCD(Charge Coupled Device))。固體拍攝元件42配置成受光面42a位於成像 透鏡41之像侧焦點面。因此，穿透圖案形成面i2a之同 調光藉由成像透鏡41引起之傅立葉轉換作用來將置放 於圖案形成面12a之穿透圖像所對應之傅立葉轉換像形 成於受光面42a上。固體拍攝元件42檢測受光面42a 上之傅立葉轉換像當作光強度分布，將所得到的空間頻 譜累積當作檢測光量所對應之電荷並轉換為圖像信 號。轉換得到的圖像信號輸出到資料處理裝置50。 在此，第三圖概略繪示沒有圖案不均之理想光罩 1〇。如第三圖所示，於理想的圖案形成面12a以規定的 間距ω(單位：μιη)以矩陣狀排列有構成重複圖案12之複 數個單位圖案13。本實施形態中假想的各單位圖案13 具有例如落入50〜600(單位：μιη)之範圍的間距。線寬較 佳為1〜300(單位：pm)。此外，第三圖所示之單位圖案 13之數目僅止於示意。實際上形成於圖案形成面12a之 201033606 單位圖案13之數目更多。 第四圖（A)〜第四圖φ)之各圖繪示形成於圖案形成 面12a之圖案不均之一例。第四圖（A)〜第四圖（D)之各圖 中，於圖案不均所存在之圖案形成面12a上之缺陷區域 附上符號14。第四圖（A)繪示特定之單位圖案13群之間 距和間距⑴不同的圖案不均。第四圖（B)繪示特定之單 位圖案13群之位置偏離其他單位圖案13群的圖案不 均。第四圖（A)及第四圖（B)所示之圖案不均有關圖案位 置精度，發生的原因例如為在以雷射光束進行之描繪之 接縫發生的位置偏移。第四圖（C)及第四圖¢))繪示特定 之單位圖案13群比其他單位圖案13群更細或粗的圖案 不均。第四圖（C)及第四圖（D)所示之圖案不均有關CD 精度，發生的原因例如為描繪時之雷射光束之強度變 動。補充說明除了第四圖（A)〜第四圖（D)之各圖例示之圖 案不均以外，例如特定之單位圖案13群有相同之形狀 缺陷的情況等也是圖案檢查裝置1中作為對象之圖案不 均。 第五圖（A)、第五圖（B)之各圖繪示由拍攝裝置40所 拍攝之空間頻譜。此外，第五圖（A)、第五圖（B)之各圖 為了圖式之明瞭化而將明暗顛倒繪示空間頻譜。 如第三圖所示，在單位圖案13群以沒有圖案不均 方式規則排列的情況，各單位圖案13之排列引起之繞 射光以某周期規則性分布於傅立葉轉換面（受光面 42a)。在此情況，在受光面42上，檢測十字型圖案100 17 201033606 以等間距排列的空間頻譜（參照第五圖（A))。 圖幸Ϊ —方面’如第四圖（A)〜第四圖（D)之各圖所示，在 葉轉2形成於圖案形成面以之情況，繞射光在傅立 ❿ ^間頻率成分U0出現。空間頻率成分11〇是业二 在正f的單位圖案13之形狀發生的空間頻率 亲、常成分’因此如第五圖（Β)所示分布於和各十字型 =1〇〇(之中心）分開的位置。為了精度良好地檢測 之有無，必須使空間頻率成分110和 ⑼ ^離進行分布。在此，「分離」例如表㈣—般圖的案二0 2末進行之圖像解析處理等使得雙方之圖像在空間上 分開的狀態，該分開的程度足以明確區別空間頻 110與十字型圖案100。 刀 具體來說，在因形成於圖案形成面i2a之周期性構 造而產生之繞射光之繞射階數之絕對値定義為η、光源 部31照射之同調光之波長定義為λ(單位：μιη)、單位圖 案13之間距定義為ω(單位：μιη)的情況，η階繞射光以 與〇階繞射光所成、滿足以下之條件（1)的角度射出。 θη=8ΐη'1(ηλ/ω)· · .(ΐ) 在離圖案形成面12a距離L(單位：mm)的觀察面上 〇階繞射光之位置與n階繞射光之位置之差異（距離）定 義為h(單位：mm)的情況，距離h滿足以下之條件(2)。 h=L(tan0n)· · *(2) 201033606 再者，在欲檢測之誤差量定義為Δω(單位：μιη)、 包括誤差之部分之單位圖案13之間距定義為 ω’(=ω±Δω，單位：μιη)、單位圖案13之間距為ω、ω， 時各自之η階繞射光在上述觀察面上位置之差異（距離) 定義為Ah(單位：mm)的情況，距離Ah滿足以下之條件 (3)。In the present embodiment, the mask to be inspected is a mask for exposure, and is used to manufacture, for example, an FPD (Flat Panel Display, for example, a liquid crystal display device), an electric «display device, an EL (Electro Luminescencr) display device, and an LED (Light). Emitting Diode) A substrate for an imaging device such as a display device or a DMD (Digital Mirror Device) display device. Such a mask is formed by forming a transfer pattern for one or a plurality of image devices on a large square substrate of, for example, more than lm. Each of the transfer patterns contains a repeating pattern. The repeating pattern is formed by repeating a plurality of identical patterns. The first diagram schematically shows the overall configuration of the pattern inspection device 1 of the present embodiment. The structure of the pattern inspection device 1 is suitable for inspecting the pattern unevenness of the reticle 10, and the pattern 12 of the repeating 201033606 is formed on the surface of the transparent substrate 11 of the reticle 10. In the present embodiment, light is irradiated from the back side (the side without the pattern) of the mask 10 as the subject, and the light is received on the surface (pattern forming surface) side, and the details will be described later. In another embodiment, light may be irradiated from the surface side of the mask 1 and received on the back side. A method of manufacturing the mask 10 to be inspected in the present embodiment will be described. The mask is manufactured by a mask manufacturing process, a photoresist pattern forming program, a mask pattern forming program, and a pattern defect inspection program. Further, the object to be inspected may be an intermediate body of the above-described photomask 10, that is, an object in which a photoresist pattern is formed or an object in which a photoresist pattern is formed as a mask to form a mask pattern (object before peeling of the photoresist pattern). In the case where the substrate before the formation of the mask pattern is the object to be inspected, the device for observing the first image of the transmitted light can be changed, and the reflected light can be observed for inspection. In the mask blank manufacturing process, a film such as a light shielding film is formed on the surface of the transparent substrate 11. For example, a synthetic quartz glass substrate or the like is suitable as the material of the transparent substrate 11. Further, a material having a light-shielding property such as chrome or a semi-translucent material is suitable as a material constituting the film of the repeating pattern 12. A photoresist is applied to the film to form a photoresist film, thereby completing the mask blank. Next, in the photoresist pattern forming process, the laser beam generated by the greening machine is irradiated onto the photoresist film of the mask. The drawing process is performed by an arbitrary drawing method such as a raster drawing method, and a predetermined pattern is exposed to the first resist film. After the predetermined pattern is exposed, the resist pattern is formed by selectively removing the drawing portion or the non-drawing portion depending on the photoresist (positive photoresist or negative photoresist) used for development. In the mask pattern forming process, the photoresist pattern is masked and the film is etched to form a repeating pattern 12 201033606 (light-shielding film pattern) 12. Then, the residual photoresist is removed. In the mask 1 ,, after the residual photoresist is removed, a pattern defect inspection program is performed as a loop of the manufacturing process of the mask 1 . In addition, the photomask 1G may be a so-called binary mask in which a single-layer light-shielding film is patterned (the binary claw is smudged, and the photomask 10 may be a pattern of a laminated light-shielding film or a semi-transparent film. A multi-tone mask (multi_t〇nemask) is formed. In the case where the laminated film is formed, the above-described photolithography program of the mask manufacturing process to the mask pattern forming program is performed plural times. Medium = after the pattern is removed, the photoresist is removed, or the correction process is performed. In addition, after the above, the in 4 is used to correct the processing of the defect detection, and the pattern of the mask 10 is not checked. The cover 10 is arranged (10) and inspected. Λ The inspection of the defect inspection inspection material is passed to the case 10 to implement the pattern transfer program. The photoresist film of the substrate for the image device, the transfer pattern of the 殳L: write The structure of the substrate for the image device is Ϊ========================================================================================== Next, the pattern inspection device 1 is set to be in the pattern defect. In the inspection program, after using the mask pattern (or photoresist pattern) to form a program, such as a table, and the light is not covered, the second stage 2, for example, the structure is loaded in this manual, The first picture; ^ Υ direction can be freely supported. : In the brother-in-law book, the direction perpendicular to the first picture and the paper surface, and the two sides that are orthogonal to the X direction and orthogonal to each other are Χ^ and Ζ directions. According to this definition, the stage is also referred to as the gamma direction. The surface 0 of the mask 10 having the repeating pattern 12 is "supported to form ❿ 12a". ) is parallel to the XY plane. In addition, ^ is shown with its optical axis 平行 parallel to the Z axis. In the device 4G supported pattern inspection device 1, it is necessary to capture the illumination light from the illumination device 30, and the image is not hindered from being irradiated, so that the image of the stage/〇 is "only for the frame shape. The outer peripheral portion of the illuminating cover 10, for example, the support body is formed to move (scanning) based on the gamma direction, and the frame is configured to make the illuminating device 3 〇 for the purpose of detecting the image 2. The X direction or the Y direction can be set. The shifting device 4 is opposite to the carrier structure. The household light indicates the main part of the pattern inspection device 1. The light source unit 31 and the illumination source unit 31 have a light source such as at least A light source that is substantially coherent and is a single-wavelength light. A laser such as a semiconductor laser is used. ^ The illumination optical system 32 is disposed between the reticle 10 and the light source portion 31. 201033606 The illumination optical system 32 makes the light source The dimming of the portion 31 is parallelized and incident on the transparent substrate 1 at an incident angle θί (unit: deg). In the second diagram, in order to clarify the drawing, the drawing of the light traveling inside the transparent substrate 11 is omitted. Light source unit 31 and illumination light The system 32 is arranged and the frame constitutes an incident angle 0i (according to another expression, an angle formed by a normal of the Fourier transform surface (optical axis AX) and an optical axis of the illumination optical system 32) falls, for example, by 0° < The range of θί < 90° (more preferably 2〇° < 0i < 8〇°). The illumination optical ❿ system 32 illuminates at least a portion of the pattern forming surface 12a (for example, an area of about φ60 to 70 mm), The pattern forming surface 12a includes an inspection field of view based on the imaging device 40. The frame is configured to illuminate the illuminating light into the reticle 10, whereby the diffracted light of a desired order corresponding to the incident angle can be used to easily detect, for example, a liquid crystal display. The pattern unevenness generated on the display device for manufacturing a device, etc. The transparent substrate 11 is an optical substrate whose both surfaces are parallel planes. Therefore, the same dimming light is emitted from the transparent substrate 11 at an angle of incidence of 0i (that is, an angle of φ equal to the incident angle θί) When the pattern forming surface 12a is irradiated with the same dimming light by the emission angle θί, the periodic structure (that is, the repeating pattern 12) formed on the pattern forming surface 12a causes diffracted light. Here, the same dimming and imaging device 40 The optical axis AX is at an angle. Therefore, the low-order diffracted light including the 0th order is diffracted in different directions in the direction in which the imaging device 40 is located. On the optical path parallel to the optical axis AX of the imaging device 40, there is an angle θη with the pupil light. The high-order diffracted light in the vicinity of the -n order (unit: deg) travels. The imaging lens 41 included in the imaging device 40 has substantially only a predetermined order and a higher order (absolute 値 larger) than the predetermined order. 15 201033606 The typical pattern unevenness of the mask ίο is fine with respect to the normal pattern. In order to perform defect inspection with high precision, it is preferable to use high-order diffracted light including information on the fine structure of the object. Therefore, the pattern inspection apparatus 1 frame is configured to exclude low-order diffracted light while using high-order diffracted light to check the presence or absence of pattern unevenness of the reticle 10. The imaging device 40 is an area camera that captures diffracted light generated on the pattern forming surface 12a illuminated by the illumination optical system 32. The imaging device 40 is configured such that the object-side focal plane of the imaging lens 41 is located on the pattern forming surface 12a. Further, the imaging device 4 has a solid imaging element 42 (for example, a CCD (Charge Coupled Device)). The solid-state imaging element 42 is disposed such that the light receiving surface 42a is located on the image side focal plane of the imaging lens 41. Therefore, the same dimming of the penetrating pattern forming surface i2a is formed on the light receiving surface 42a by the Fourier transform image corresponding to the through image placed on the pattern forming surface 12a by the Fourier transform effect caused by the imaging lens 41. The solid-state imaging device 42 detects the Fourier-converted image on the light-receiving surface 42a as a light intensity distribution, and accumulates the obtained spatial spectrum as a charge corresponding to the detected light amount, and converts it into an image signal. The converted image signal is output to the material processing device 50. Here, the third figure schematically shows an ideal mask 1 without pattern unevenness. As shown in the third figure, a plurality of unit patterns 13 constituting the repeating pattern 12 are arranged in a matrix at a predetermined pitch ω (unit: μηη) on the ideal pattern forming surface 12a. In the present embodiment, each of the imaginary unit patterns 13 has a pitch which falls within a range of 50 to 600 (unit: μηη). The line width is preferably from 1 to 300 (unit: pm). Further, the number of unit patterns 13 shown in the third figure is merely illustrative. Actually, the number of the unit patterns 13 formed in the pattern forming surface 12a is more. Each of the fourth to fourth figures (A) to φ) shows an example of pattern unevenness formed on the pattern forming surface 12a. In each of the fourth to fourth figures (A) to (D), the symbol 14 is attached to the defect region on the pattern forming surface 12a where the pattern unevenness exists. The fourth figure (A) shows pattern unevenness in which the distance between the specific unit pattern 13 groups and the pitch (1) are different. The fourth figure (B) shows the pattern unevenness of the position of the specific unit pattern 13 group from the other unit pattern 13 group. The pattern unevenness shown in the fourth (A) and fourth (B) diagrams relates to the positional accuracy of the pattern, and the cause of the pattern shift is, for example, a positional deviation occurring at the seam drawn by the laser beam. The fourth figure (C) and the fourth figure ()) show that the specific unit pattern 13 group is thinner or thicker than the other unit patterns 13 group. The pattern unevenness shown in the fourth (C) and fourth (D) figures relates to the CD accuracy, and the cause of the occurrence is, for example, the intensity change of the laser beam at the time of drawing. In addition to the pattern unevenness exemplified in each of the fourth (A) to fourth (D) drawings, for example, when the specific unit pattern 13 group has the same shape defect, the image inspection apparatus 1 is also an object. The pattern is uneven. The figures of the fifth (A) and fifth (B) diagrams show the spatial spectrum captured by the camera 40. In addition, each of the fifth (A) and fifth (B) diagrams shows the spatial spectrum upside down for the sake of clarity. As shown in the third figure, in the case where the unit pattern 13 groups are regularly arranged in a pattern uneven manner, the diffraction light caused by the arrangement of the unit patterns 13 is regularly distributed to the Fourier conversion surface (light receiving surface 42a) in a certain period. In this case, on the light receiving surface 42, the spatial spectrum in which the cross pattern 100 17 201033606 is arranged at equal intervals is detected (refer to FIG. 5(A)). Figure 4: As shown in each of the fourth (A) to the fourth (D) diagrams, in the case where the leaf turn 2 is formed on the pattern forming surface, the diffracted light is in the frequency component U0 between the Fouriers appear. The spatial frequency component 11〇 is the spatial frequency pro-normal component that occurs in the shape of the unit pattern 13 of positive f. Therefore, it is distributed as shown in the fifth figure (Β) and each cross type=1〇〇 (the center) Separate location. In order to accurately detect the presence or absence of it, it is necessary to distribute the spatial frequency components 110 and (9). Here, "separation" is, for example, a state in which the image analysis processing performed at the end of the case of the table (4) is made such that the images of the two sides are spatially separated, and the degree of separation is sufficient to clearly distinguish the spatial frequency 110 from the cross type. Pattern 100. Specifically, the absolute 値 of the diffraction order of the diffracted light generated by the periodic structure formed on the pattern forming surface i2a is defined as η, and the wavelength of the same dimming light irradiated by the light source unit 31 is defined as λ (unit: μιη) The distance between the unit patterns 13 is defined as ω (unit: μιη), and the n-th order diffracted light is emitted at an angle which satisfies the following condition (1) with the pupil-order diffracted light. Θη=8ΐη'1(ηλ/ω)·(.) The difference between the position of the diffracted light and the position of the nth-order diffracted light on the observation surface at a distance L (unit: mm) from the pattern forming surface 12a (distance) In the case of h (unit: mm), the distance h satisfies the following condition (2). h=L(tan0n)· · *(2) 201033606 Furthermore, the distance between the unit patterns 13 in which the amount of error to be detected is defined as Δω (unit: μιη) and the portion including the error is defined as ω' (=ω±Δω) , unit: μιη), the distance between the unit patterns 13 is ω, ω, and the difference (distance) between the respective n-th order diffracted lights on the above-mentioned observation surface is defined as Ah (unit: mm), and the distance Ah satisfies the following Condition (3).
Ah=h — h’ ❹ =L(tanGn—tan0，n) =L{tan(sin ^πλ/ω)) — tan(sin'1(nX/ro,))} · · *(3) 在觀測距離Ah之拍攝裝置4〇(成像透鏡41)之焦點 距離定義為f(單位：mm)、單位圖案13之間距為ω、ω’ 時各自之η階繞射光在受光面42a上位置之差異（距離) 定義為Ah’(單位：mm)的情況，距離Ah’滿足以下之條 件(4) 〇 參 Δ1ι，=ί^η(Δθη)) · · · (4) Αθη=θη— θ’η =tan-1(Ah，/f) ιήΓ'ηλ/ω)- sin ^/co，） 再者，排列於固體拍攝元件42受光面42a之畫素之 間距定義為p(單位：mm)。此時，為了將因圖案不均而 產生之空間頻率成分110從十字型圖案100分離進行拍 2〇1〇336〇6 攝，將圖案檢查裝置1架構成滿足以下之條件(5)。 Δ1ι’>ρ···(5) 鲁 、 為了以高精度檢查微細的圖案不均’較佳為如前所 迷利用尚階繞射光。本申請人轉變想法而不拘泥於光罩 技術領域中之技術常識（亦即觀看光罩之實像進行缺陷 檢查）’因而想到了觀看傅立葉轉換像進行缺陷檢查。此 外’根據這樣的構想，進一步為了簡易且快速檢查圖案 =均之有無，想到了上述將圖案不均所對應之頻譜（亦即 空間頻率成分110)從十字型圖案100分離並進行觀察的 方法。本申請人發現，圖案不均之尺寸相對於正常圖案 (單位圖案13)越微細，在將空間頻率成分110從十字型 圖案100分離時較佳為利用更高階數之繞射光。 繁於影像裝置用的光罩10之單位圖案13之間距ω 與$型的圖案不均之尺寸之關係’為了使用滿足條件（5) 1結構的圖案檢查裝置1來使空間頻率成分110與十字 ^圖案100分離，希望入射成像透鏡41之η階繞射光 碼足以下之條件（6)。 20^η· · .(6) uo ^十滿足條件(6)時，能使空間頻率成分 案能使空間頭率成分-從十字型圖 繞射光之光量越少。因 在此’繞射光之階數越高， 20 201033606 此，雜訊增加等，可能使檢查精度降低。因此，n階繞 射光更佳為滿足以下之條件(7)。 20^η^700···(7) 在η階繞射光滿足條件時，受光面42a上被檢測 ^空間頻譜之雜訊引起的劣化受到抑制，所以確保精度 尚的檢查。在η階繞射光超過條件(7)之上限時，空間頻 譜之雜訊增加，可能使檢查精度降低。 此外，為了進一步提高檢查精度，希望將η階繞射 光设定成例如滿足以下之條件（8)。 30<η<600···(8) 以下例示圖案檢查裝置1之具體的數値組合。固體 拍攝元件42例如為1/3型且為vGA(Video Graphics Array)。此情況之畫素間距p為6.35μιη。此外，光源部 31所照射之同調光之波長χ、成像透鏡41之焦點距離f、 及可檢查之典型的圖案不均之尺寸△(〇如下。 λ · 0.532μιη f : 50mm Δω · 0.1 μηι 單位圖案13之間距ω為ΐ〇〇μηι時，為了使空間頻 率成分110從十字型圖案10〇分離，將圖案檢查裝置1 架構成使-24階以上(依據光罩1〇與照明裝置3〇之位置 關係為+24階以上)之階數之繞射光入射成像透鏡41。此 21 201033606 外早位圖案13之間距ω為200μιη、300μιη時，為了 使空間頻率成分110從十字型圖案100分離，將圖案檢 查裝置1架構成分別使-92階以上(依據上述位置關係為 +92階以上）、-200階以上(依據上述位置關係為+2〇〇階 以上）之階數之繞射光入射成像透鏡41。 例如考慮檢查單位圖案13之間距ω為4〇〇μιη、 500μιη或600μιη之光罩10的情況。在間距⑴為4〇〇μιη、 瘳 500叫^ 600^m時，為了使空間頻率成分110從十字型 圖案1〇〇分離，將圖案檢查裝置i架構成分別使_339階 以上（依據上述位置關係為+339階以上）、_5〇2階以上（依 據上述位置關係為+502階以上）、-681階以上（依據上述 位置關係為+681階以上）之階數之繞射光入射成像透鏡 41 ° 資料處理裝置50例如為一般的桌上型pc(Pers〇nal Computer) ’安裝有用以進行光罩1〇之缺陷檢查的缺陷 檢查用的應用程式。資料處理裝置5〇啟動缺陷檢查用 _ 的應用程式，根據從固體拍攝元件42輸出的圖像信號 來生成檢查圖像（例如第五圖（A)或第五圖（B)所示之圖 像）。接著，對於所生成之檢查圖像與規定的參考圖像(一 種圖像，是圖案不均不存在的理想光罩1〇之空間頻譜， 空間頻率成分110實質上未出現）進行比較並檢測差 分。資料處理裝置50根據檢測出之差分來判定光罩10 之圖案不均之有無。具體來說，當空間頻率成分110出 ，從十字型圖案100分離時，資料處理裝置5〇判定為 光罩ίο包含圖案不均。另一方面，空間頻率成分11〇 22 201033606 未出現時（空間頻率成分110未從十字型圖案100分離 時），判定光罩10不含圖案不均。資料處理裝置50所產 生之判定結果顯示於顯示器60。 作業者根據顯示於顯示器60之判定結果來確實掌 握光罩10之圖案不均之有無。對光罩10判定圖案不均 之有無例如在光罩10之有效區域整體之掃描完成的時 點、或在圖案不均偵知的時點結束。 Φ 依據本實施形態之圖案檢查裝置1，不必如習知般 考慮缺陷種別變更檢查條件（焦點之調整等），重複進行 與缺陷種別相應的檢查。由於能在不變更檢查條件之前 提下連續掃描光罩10進行檢查，所以檢查時間大幅縮 短。對於光罩10之有效區域整體掃描後判定沒有圖案 不均的情況，能簡易且快速獲得光罩10之品質保證。 在此情況，能往下一程序前進，不必檢查圖案不均之具 體内容，有助於製造效率之提高。此外，為了檢查、解 析圖案不均之具體内容，也可以例如將一結構安裝於圖 φ 案檢查裝置1，該結構將成像透鏡41所產生之傅立葉轉 換像轉換為實像，將轉換出之實像拍攝並解析。 如此，依據本實施形態之圖案檢查裝置1，能簡易 且快速檢查圖案不均之有無，所以檢查時間大幅縮短 縮，因而在前置時間等方面是有利的。此外，本實施形 態之圖案檢查裝置1具有簡易的結構，該結構不需要用 以去除低階繞射光之雜訊的空間濾波器，因此減輕設計 開發時或製造時之負擔。 23 201033606 以上是本發明實施形態之說明。本發明並不限定於 上述之結構，在本發明技術思想之範圍内可以做各種變 形。 【圖式簡單說明】 第一圖概略繪示本發明實施形態之圖案檢查裝置 整體之結構。 ❹ 第二圖概略繪示本發明實施形態之圖案檢查裝置 主要部分之結構。 第三圖概略繪示沒有圖案不均之理想光罩。 第四圖繪示形成於光罩圖案形成面之圖案不均之 一例。 第五圖繪示由本發明實施形態之圖案檢查裝置所 具有之拍攝裝置所拍攝之空間頻譜。 ® 【主要元件符號說明】 1 圖案檢查裝置 10 光罩 20 載台 30 照明裝置 40 拍攝裝置 50 資料處理裝置 60 顯不 24Ah=h — h′ ❹ =L(tanGn—tan0,n) =L{tan(sin ^πλ/ω)) — tan(sin'1(nX/ro,))} · · (3) in observation The focal length of the imaging device 4A (imaging lens 41) of Ah is defined as f (unit: mm), and the difference between the position of the n-th order diffracted light on the light receiving surface 42a when the distance between the unit patterns 13 is ω, ω' ( When the distance is defined as Ah' (unit: mm), the distance Ah' satisfies the following conditions (4) 〇 Δ Δ1ι, = ί η (Δθη)) · · · (4) Α θη = θη - θ'η = Tan-1(Ah, /f) ιήΓ'ηλ/ω)- sin ^/co,) Further, the distance between the pixels arranged on the light receiving surface 42a of the solid-state imaging device 42 is defined as p (unit: mm). At this time, in order to separate the spatial frequency component 110 generated by the pattern unevenness from the cross pattern 100 and take a picture of 2〇1〇336〇6, the pattern inspection apparatus 1 frame is configured to satisfy the following condition (5). Δ1ι'>ρ···(5) Lu, in order to inspect fine pattern unevenness with high precision, it is preferable to use the fine-order diffracted light as before. The Applicant changed his mind and did not stick to the technical common sense in the field of reticle technology (i.e., viewing a real image of a reticle for defect inspection). Thus, it was conceivable to view the Fourier transform image for defect inspection. Further, according to such a concept, in order to easily and quickly check the pattern = the presence or absence of the pattern, it is conceivable that the above-described spectrum (i.e., the spatial frequency component 110) corresponding to the pattern unevenness is separated from the cross pattern 100 and observed. The Applicant has found that the finer the pattern unevenness is than the normal pattern (unit pattern 13), and it is preferable to use a higher order diffracted light when separating the spatial frequency component 110 from the cross pattern 100. The relationship between the unit pattern 13 of the photomask 10 for the video device and the size of the pattern unevenness of the ω and the $ type is used to make the spatial frequency component 110 and the cross with the pattern inspection device 1 having the configuration satisfying the condition (5) 1 The pattern 100 is separated, and it is desirable that the n-th order diffracted optical code of the incident imaging lens 41 is sufficient for the lower condition (6). 20^η· · . (6) When uo ^ ten satisfies the condition (6), the spatial frequency component can make the spatial head rate component - the less the amount of light diffracted from the cross pattern. Because the order of the diffracted light is higher, 20 201033606, the increase in noise, etc., may reduce the inspection accuracy. Therefore, the n-order diffracted light is more preferably satisfying the following condition (7). 20^η^700·(7) When the n-th order diffracted light satisfies the condition, the deterioration caused by the noise of the detected spatial spectrum on the light-receiving surface 42a is suppressed, so that the accuracy is checked. When the n-th order diffracted light exceeds the upper limit of the condition (7), the noise of the spatial spectrum is increased, which may deteriorate the inspection accuracy. Further, in order to further improve the inspection accuracy, it is desirable to set the n-th order diffracted light to, for example, satisfy the following condition (8). 30 < η < 600 (8) The specific number combination of the pattern inspection device 1 is exemplified below. The solid imaging element 42 is, for example, a 1/3 type and is a vGA (Video Graphics Array). In this case, the pixel pitch p is 6.35 μm. Further, the wavelength 同 of the same dimming light irradiated by the light source unit 31, the focal length f of the imaging lens 41, and the size Δ of the typical pattern unevenness which can be inspected are as follows. λ · 0.532 μιη f : 50 mm Δω · 0.1 μηι Unit When the distance ω between the patterns 13 is ΐ〇〇μηι, in order to separate the spatial frequency component 110 from the cross pattern 10, the pattern inspection device 1 is configured to be -24 steps or more (according to the mask 1 and the illumination device 3). The diffracted light having the order of +24 steps or more is incident on the imaging lens 41. When the distance ω between the outer early patterns 13 is 200 μm and 300 μm, the space frequency component 110 is separated from the cross pattern 100. The pattern inspection device 1 is configured such that diffracted light of an order of -92 steps or more (+92 steps or more according to the above positional relationship) and -200 steps or more (+2〇〇 or more according to the above positional relationship) is incident on the imaging lens. For example, consider a case where the photomask 10 having a distance ω of 4 μm, 500 μm, or 600 μm between the unit patterns 13 is examined. When the pitch (1) is 4 〇〇 μιη, 瘳 500 is called 600 μm, in order to make the spatial frequency component 110 is separated from the cross-shaped pattern 1〇〇, and the pattern inspection device i frame is configured to have _339 steps or more (+339 steps or more according to the positional relationship described above), _5〇2 steps or more (+502 steps or more according to the above positional relationship) ), the diffraction light of the order of -681 or more (the positional relationship is +681 or more) is incident on the imaging lens 41 °. The data processing device 50 is, for example, a general desktop PC (Pers〇nal Computer) An application for defect inspection for performing defect inspection of the mask 1 . The data processing device 5 starts an application for defect inspection _, and generates an inspection image based on an image signal output from the solid-state imaging device 42 (for example, the fifth The image shown in Fig. (A) or Fig. 5(B). Next, for the generated inspection image and the specified reference image (an image, an ideal mask that does not exist in the pattern unevenness) The spatial spectrum, the spatial frequency component 110 is substantially absent, and the difference is detected. The data processing device 50 determines the presence or absence of the pattern unevenness of the reticle 10 based on the detected difference. Specifically, when the spatial frequency is When the component 110 is separated from the cross pattern 100, the data processing device 5 determines that the mask ίο contains pattern unevenness. On the other hand, when the spatial frequency component 11〇22 201033606 does not appear (the spatial frequency component 110 is not from the cross type) When the pattern 100 is separated, it is determined that the mask 10 does not include pattern unevenness. The result of the determination by the data processing device 50 is displayed on the display 60. The operator surely grasps the pattern unevenness of the mask 10 based on the determination result displayed on the display 60. Whether there is. The presence or absence of the pattern unevenness is determined for the mask 10, for example, when the scanning of the entire effective area of the mask 10 is completed, or when the pattern unevenness is detected. Φ According to the pattern inspection apparatus 1 of the present embodiment, it is not necessary to change the inspection condition (focus adjustment, etc.) of the defect type as usual, and repeat the inspection according to the defect type. Since the continuous scanning mask 10 can be inspected without changing the inspection conditions, the inspection time is greatly shortened. When it is determined that there is no pattern unevenness after the entire area of the effective area of the mask 10 is scanned, the quality assurance of the mask 10 can be easily and quickly obtained. In this case, it is possible to proceed to the next procedure without checking the specific content of the uneven pattern, which contributes to an improvement in manufacturing efficiency. Further, in order to examine and analyze the specific content of the pattern unevenness, for example, a structure may be attached to the image inspection apparatus 1 which converts the Fourier converted image generated by the imaging lens 41 into a real image, and the converted real image is taken. And parsing. As described above, according to the pattern inspection apparatus 1 of the present embodiment, the presence or absence of pattern unevenness can be easily and quickly checked. Therefore, the inspection time is greatly shortened, which is advantageous in terms of the lead time and the like. Further, the pattern inspecting apparatus 1 of the present embodiment has a simple structure which does not require a spatial filter for removing noise of low-order diffracted light, thereby reducing the burden on design development or manufacturing. 23 201033606 The above is an explanation of the embodiment of the present invention. The present invention is not limited to the above-described configuration, and various modifications can be made within the scope of the technical idea of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The first diagram schematically shows the overall configuration of a pattern inspection apparatus according to an embodiment of the present invention. The second diagram schematically shows the configuration of the main part of the pattern inspection apparatus according to the embodiment of the present invention. The third figure schematically shows an ideal mask without pattern unevenness. The fourth figure shows an example of pattern unevenness formed on the mask pattern forming surface. Fig. 5 is a view showing a spatial spectrum of the imaging device of the pattern inspection device according to the embodiment of the present invention. ® [Main component symbol description] 1 Pattern inspection device 10 Photomask 20 Stage 30 Illumination device 40 Camera 50 Data processing device 60 Display 24