201039976_twfdoc/n 六、發明說明： " 【發明所屬之技術領域】 本發明是有關於一種用於化學機械研磨的設備，且特 別是有關於一種用於化學機械研磨的固定環(retainer ring) 〇 【先前技術】 ◎在半導體製程技術中，表面平坦化是處理高密度微影 的一項重要技術。沒有高低起伏的平坦表面才能夠避免曝 光時造成散射’以達成精密的圖案轉移(pattern transfer)。 化學機械研磨法為現在唯一能提供超大型積體電路 (very-large scale integration，VLSI)，甚至極大型積體電路 (ultra-large scale integration，ULSI)製程『全面性平坦化 (global planarization)』的一種技術。因此，目前晶圓的平 坦化都是以化學機械研磨製程來完成。 一般來說’化學機械研磨製程是先以研磨頭將晶圓的 D 月面固疋住，然後將晶圓的正面壓在具有研磨墊的研磨台 上來進行研磨。此外，在研磨的過程中，通常會將固定環 (retainerring)配置在晶圓的周圍，以防止晶圓滑脫。 為了使固定環能夠有效地防止晶圓滑脫，通常會施加 極大的下壓力來固定晶圓。然而，極大的下壓力往往會造 成晶圓周圍的研磨墊產生形變(reb〇und)，導致晶圓邊緣的 研磨速率不易控制。此外，由於固定環的内壁與晶圓的邊 緣兀全接觸，使得研漿或研磨副產物容易殘留在固定環的 201039976 zuuyuu i 3u/83twf.doc/n 嫩w許多顆粒 【發明内容】 曰一種化學機械_的固定環，其可以減小 曰曰圓周圍的研磨墊產生變形的面積。 本發明提供一種化學機械研磨的固定環，豆 ^留在固定環_壁與晶_邊緣之_研漿俩磨副產 古對供—種化學機械研磨的固定環，其可以提 回對日日圓邊緣的研磨速率的控制。 =明^—種用於化學機械研磨的固定環，其適於 曰疋環的内壁與晶圓接觸，且固定環的内壁盘 曰曰0之_總接觸長度小於晶圓關長的8q%。 變，Γ、=Γ作關所狀用於化學機械研磨的固定 的寬产例如具有多個溝槽，且這些溝槽 的克度的w和大於晶圓的周長的20%。 出—種用於化學機械研磨的固定環，其適 環，㈣峡之⑽化學频研磨的固定 依昭太旅1的内壁的形狀例如為非圓形。 環，上述之‘定月二f例所述之用於化學機械研磨的固定 展的内壁的形狀例如為多邊形。 201039976 zuwuui J〇783twf.doc/n ^依知、本發明實施例所述之用於化學機械研磨的固定 壤’上述之固定環的内壁與晶圓之間的總接觸長度例如小 於晶圓的周長的。 ^發明再提出一種用於化學機械研磨的固定環，其適 於固疋晶圓°固定環的内壁與晶圓接觸，JLS]定環的内辟 具有多，突出結構(protrusion)。 土 η依、照本發明實施例所述之用於化學機械研磨的固定 o o % ’上述之突出結構與晶圓之間的接觸長度的總和例如小 於晶圓的周長的80〇/。。 基於上14 ’本發賴少了固定環㈣壁與晶圓接觸的 pw =此可綠容易地清洗固定環_壁與晶圓邊緣之 寒私Γ水以及研相產物，明錢留的研漿以及研磨副 =晶®造祕害。此外，本發明亦有效地減少了晶圓 墊產生變形的面積，因此更容易控制晶圓邊緣 的研磨逮率而具有更佳的研磨表現。 為讓本發日狀上述缝和優雜㈣顯胃懂，下文特 舉a施例’並配合所附圖式作詳細說明如下。 【實施方式】 辟愈ΐίΓ，“接觸長度，，是指由上視圖來翻定環的内 壁與晶圓接觸部分的長度。 在第-實施例中，藉由位於固定環的 ，而使固定環的内壁與晶圓接觸的面積減少二二、 曰曰囡周圍的研磨墊產生變形的面積、提高對晶_緣的研 201039976 ^v783twf.d〇c/n 磨速率的控制以及有效清洗固定環的内壁與晶圓邊緣之 的研漿與研磨副產物的目的。 '' 3 此外，在第二實施例中，藉由使固定環的内壁與 之間的總接觸長度小於晶圓的周長的80%來減少固的 内壁與晶圓接觸的面積，以達到減少晶圓周圍的研 生變形的面積、提高對晶圓邊緣的研磨速率的栌制以及 ΓΓί固定環的内壁與晶圓邊緣之間的研漿^磨副產物 狀而it在第三實施例中，#由改變固定環的内壁的形 的内壁的形狀與晶圓的形狀不同，以減少固 與晶圓接觸的面積’進而達到減少晶圓周圍的 產生變形的面積、提高對晶圓邊緣的研磨速率的控 二以及有效清洗固定環的内壁與晶圓邊緣 ς 磨副產物的目的。 興研 磨制描述’在以下各實施例中將省略化學機械研 他如研磨塾等），而僅描述固定環與晶 u 、關係。此外，在以下各實施例中，相同的元件將 以相同的標號來表示。 J7G仵將 第一實施例 磨的:實施例所繪示的用於化學機械研 磨的固請參照圖1，用於化學機械研 右久插α长1〇0適於固定晶圓102，而晶圓102上已形成 有。種待研磨的膜層（未纷示）。固定環刚位於晶圓的周 201039976 ^wyxjui 30783twf.doc/n 圍且固定環〗〇〇的内壁與晶圓1〇2接觸，以將晶圓川2固 定住而避免晶圓102在研磨的過程中滑脫。固定環1〇〇的 内壁具有多個突出結構104。在本實施例中，突出钟 例如是半球狀的結構。由於突出結構1〇4為半球狀的社 構，因此由上視圖來看每一個突出結構1〇4與晶圓ι〇2^ 為“點”，意即減少了固定環的内壁與晶圓之間的201039976_twfdoc/n VI. Description of the Invention: " [Technical Field of the Invention] The present invention relates to an apparatus for chemical mechanical polishing, and more particularly to a retainer ring for chemical mechanical polishing. [Prior Art] ◎ In semiconductor process technology, surface flattening is an important technology for processing high-density lithography. There is no flat surface with high and low undulations to avoid scattering when exposed to achieve precise pattern transfer. The chemical mechanical polishing method is the only one that can provide very-large scale integration (VLSI) or even ultra-large scale integration (ULSI) process "global planarization". a technique. Therefore, the current wafer flattening is done by a chemical mechanical polishing process. Generally, the 'chemical mechanical polishing process' is to first fix the D-moon surface of the wafer with a polishing head, and then press the front side of the wafer onto a polishing table having a polishing pad for grinding. In addition, during the grinding process, a retainer ring is usually placed around the wafer to prevent the wafer from slipping off. In order for the retaining ring to effectively prevent the wafer from slipping, a large downforce is usually applied to fix the wafer. However, extreme downforce tends to cause the polishing pad around the wafer to deform, resulting in an unacceptable polishing rate at the edge of the wafer. In addition, since the inner wall of the fixing ring is in full contact with the edge of the wafer, the slurry or grinding by-products are likely to remain in the fixing ring. 201039976 zuuyuu i 3u/83 twf.doc/n 嫩w many particles [invention] 曰 a chemical Mechanical_fixing ring that reduces the area of deformation of the polishing pad around the circle. The invention provides a chemical mechanical polishing fixing ring, and the bean is retained in the fixing ring _ wall and the crystal _ edge _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Control of the grinding rate of the edges. = A type of fixing ring for chemical mechanical polishing, which is suitable for the inner wall of the annulus to be in contact with the wafer, and the total contact length of the inner wall of the fixing ring is less than 8q% of the wafer closing length. The fixed wide product for chemical mechanical polishing, for example, has a plurality of grooves, and the w of the grooves is greater than 20% of the circumference of the wafer. A fixing ring for chemical mechanical polishing, which is suitable for ringing, and (4) fixing of (10) chemical frequency grinding. The shape of the inner wall of Yizhaotai Brigade 1 is, for example, non-circular. The ring, the shape of the inner wall for chemical mechanical polishing described in the above-mentioned 'Cymphatics' example, is, for example, a polygon. 201039976 zuwuui J〇783twf.doc/n ^ According to the invention, the total contact length between the inner wall of the fixing ring and the wafer of the fixed soil for chemical mechanical polishing described in the embodiment of the present invention is, for example, smaller than the circumference of the wafer. long. The invention further proposes a fixing ring for chemical mechanical polishing, which is suitable for the inner wall of the fixing ring of the fixing wafer to be in contact with the wafer, and the JLS] ring has a lining with a plurality of protrusions. The soil η according to the embodiment of the present invention for fixing the chemical mechanical polishing o o % 'the total length of the contact between the protruding structure and the wafer is, for example, less than 80 〇 / of the circumference of the wafer. . Based on the upper 14', the fixed ring (four) wall and the wafer contact pw = this green can easily clean the fixed ring _ wall and wafer edge cold water and research phase products, Ming Qian left the slurry And grinding vice = crystal ® made a secret. In addition, the present invention also effectively reduces the area of deformation of the wafer pad, thereby making it easier to control the scratch rate of the wafer edge for better polishing performance. In order to make the above-mentioned seams and the above-mentioned joints (4) obvious, the following is a detailed description of the examples and the following description. [Embodiment] The term "contact length" refers to the length of the inner wall of the ring contacting the wafer by the upper view. In the first embodiment, the fixing ring is provided by the fixing ring. The area of the inner wall contacting the wafer is reduced by 22, the area of the polishing pad around the crucible is deformed, the control of the crystal edge is improved, and the grinding rate is effectively controlled and the fixing ring is effectively cleaned. The purpose of slurrying and grinding by-products between the inner wall and the edge of the wafer. '' 3 Furthermore, in the second embodiment, the total contact length between the inner wall of the fixing ring and the length of the wafer is less than 80 % to reduce the area of the inner wall of the solid to contact the wafer, to reduce the area of the deformation around the wafer, to increase the polishing rate of the edge of the wafer, and between the inner wall of the retaining ring and the edge of the wafer. The slurry is in the form of a by-product, and in the third embodiment, the shape of the inner wall of the shape of the inner wall of the fixing ring is different from the shape of the wafer to reduce the area of contact with the wafer, thereby reducing the crystal. Distortion around the circle The area, the control of the polishing rate on the edge of the wafer, and the purpose of effectively cleaning the inner wall of the retaining ring and the edge of the wafer by grinding the by-product. The grinding process description 'In the following examples, the chemical mechanical grinding will be omitted.塾, etc., and only the relationship between the fixed ring and the crystal u. Further, in the following embodiments, the same elements will be denoted by the same reference numerals. J7G仵 The first embodiment is ground: the embodiment shows For the chemical mechanical polishing, please refer to FIG. 1 , which is suitable for fixing the wafer 102 by chemical mechanical grinding, and the film 102 has been formed on the wafer 102. The fixing ring is just located on the wafer week 201039976 ^wyxjui 30783twf.doc/n and the inner wall of the fixing ring is in contact with the wafer 1〇2 to fix the wafer 2 and avoid the wafer 102 The inner wall of the fixing ring 1 has a plurality of protruding structures 104. In the present embodiment, the protruding clock is, for example, a hemispherical structure. Since the protruding structure 1〇4 is a hemispherical structure, So from the top view, each protruding structure 1〇4 and wafer ι〇2^ are “points”, which means that the inner wall of the fixing ring and the wafer are reduced.
O o 在本實施例中，由於減少了固定環 分，因此可以減小晶圓周圍的爾： 積’糾可以有效地控制晶圓邊緣的研磨 觸11定環的與晶圓的一部分邊緣接 缘之門的；ΐί觸麻因此易於清洗固定環的内壁與晶圓邊 、、栗之間的研漿與研磨副產物。 特別一提的是，在其他實施例中， 有其他合適的數量與形狀，只要 、σ 〇以^ 固定住即可。舉例來說’在圖一'7乂接觸而將晶Ϊ 結構i〇4a例如是正方形的突出結構。疋％ 100a的突出 減少固定環的内壁與晶圓之間的接觸=咖，以有效地 第一貧施例 研磨明::實，示的用於化學機械 衣之上視不意圖。為了滅少了固定環的内壁與 7 201039976… --------A3twf.doc/n 晶圓之間的接觸部分，在本實施例 之間的總接觸長度小於晶圓的周長的難，且使G固ί 溝:的梅減少固定環的内壁與晶圓之間 W妾觸長度。4參照圖2，固定環·_壁且有多個 溝槽106，且這些溝槽1〇6的寬度w的總和大於晶圓撤 的周長的20%。也就是說，由於固定環1〇〇,的内壁具有寬 度總和大於晶圓102的周長的20%的溝槽1〇6，因此使得 固定環100,的内壁與晶圓102之間的總接觸長度可以小於 晶圓102的周長的80%，進而可以達到減少晶圓周圍的研 磨墊產生變形的面積、有效控制晶圓邊緣的研磨速率以及 易於清洗固定環的内壁與晶圓邊緣之間的研漿與研磨副產 物的目的。 當然，在本實施例中，溝槽106的寬度與數量並不受 到限制，只要所有溝槽106的寬度總和大於晶圓1〇2的周 長的20%即可。 此外，在其他實施例中，上述的溝槽106亦可用開口 來取代，只要開口的寬度總和大於晶圓102的周長的2〇% 即可。 需要瞭解的是，上述的「溝槽」形成於固定環的内壁 且未穿透固定環，而「開口」則是形成於固定環的内壁且 穿透固定環。 第二實施例 圖3為依照本發明又〆實施例所繪示的用於化學機械 i〇783twf.doc/n 201039976 研磨的固定環之上視示意圖。為了減少 晶圓之間的接觸部分，本實使 ^的内壁與 狀的方式。物㈤，固定環鮮，^==的内1形 其與晶圓⑽__形)不同。詳纟=遍為四邊=O o In this embodiment, since the fixed ring is reduced, the surrounding of the wafer can be reduced: the product can effectively control the edge of the wafer 11 and the edge of the wafer. The door is ΐί, so it is easy to clean the slurry and grinding by-products between the inner wall of the retaining ring and the wafer edge and the chestnut. In particular, in other embodiments, there are other suitable numbers and shapes as long as σ 〇 is fixed by ^. For example, the crystal structure i〇4a is, for example, a square protruding structure in contact with Fig. 1 '7'.疋% 100a's protrusion reduces the contact between the inner wall of the retaining ring and the wafer = coffee, effectively the first lean example. Grinding:: Real, the above is not intended for chemical mechanical clothing. In order to eliminate the contact portion between the inner wall of the fixing ring and the 7 201039976...-------A3twf.doc/n wafer, the total contact length between the embodiments is smaller than the circumference of the wafer. Difficult, and make the G: the plum reduces the length of the contact between the inner wall of the retaining ring and the wafer. Referring to Figure 2, the ring _ wall is secured and has a plurality of grooves 106, and the sum of the widths w of the grooves 1 〇 6 is greater than 20% of the circumference of the wafer withdrawal. That is, since the inner wall of the fixing ring 1〇〇 has the groove 1〇6 whose width sum is greater than 20% of the circumference of the wafer 102, the total contact between the inner wall of the fixing ring 100 and the wafer 102 is made. The length can be less than 80% of the circumference of the wafer 102, thereby reducing the area of deformation of the polishing pad around the wafer, effectively controlling the polishing rate of the edge of the wafer, and easily cleaning the inner wall of the fixing ring from the edge of the wafer. The purpose of slurry and grinding by-products. Of course, in the present embodiment, the width and number of the grooves 106 are not limited as long as the total width of all the grooves 106 is larger than 20% of the circumference of the wafer 1〇2. Moreover, in other embodiments, the trenches 106 described above may be replaced by openings as long as the sum of the widths of the openings is greater than 2% of the perimeter of the wafer 102. It should be understood that the above-mentioned "groove" is formed on the inner wall of the fixing ring and does not penetrate the fixing ring, and the "opening" is formed on the inner wall of the fixing ring and penetrates the fixing ring. SECOND EMBODIMENT Figure 3 is a top plan view of a stationary ring for chemical mechanical i〇783twf.doc/n 201039976 grinding in accordance with an embodiment of the present invention. In order to reduce the contact portion between the wafers, the way the inner wall is shaped like this. The object (5), the fixed ring is fresh, and the inner shape of ^== is different from the wafer (10)__ shape. Detailed 纟 = all four sides =
n Jir 邊形’因此固定環_，，的内辟W 、接觸部分為四個“點，，，意即 二：二 磨塾產生變形到減少晶圓周圍的研 Ο 〇 易於清洗固定環的:壁緣的研磨速率以及 物的目的。 土 ”日日囫邊緣之間的研漿與研磨副產 可以是與晶圓lG2Hj中’β固定環，的内壁形狀也 形）’例如三角形、五邊^狀(山圓形^)不同的任何形狀(非圓 例來說，在圖3a中，二/、形·...··等等的多邊形。舉 形。 疋環1〇0，，，的内壁形狀例如為六邊 此外，視實際需求， 晶圓之間的總接觸定了以進一步使固定環的内壁虚 減少了岐環的晶圓的周長的·1有效地 雖然本發明已圓之間的接觸部分。 本發明，任何技祕如上，《並_以限定 本發明之精私範_麵f知識者，在不稅離 發明之保護範圓當‘ ^作些許之更動與润舞’故本 【圖式簡單說3月】 竣附之申請專利範園所界定者為準 9 201039976 , , _______ _. /83twf.doc/n 圖1為依照本發明一實施例所繪示的用於化學機械研 磨的固定環之上視示意圖。 - 圖la為依照本發明另一實施例所繪示的用於化學機 械研磨的固定環之上視示意圖。 圖2為依照本發明再一實施例所繪示的用於化學機械 研磨的固定環之上視示意圖。 圖3為依照本發明又一實施例所繪示的用於化學機械 研磨的固定環之上視示意圖。 圖3a為依照本發明又一實施例所繪示的用於化學機 Ο 械研磨的固定環之上視示意圖。 【主要元件符號說明】 100、100a、100,、100”、100”，_·固定環 102 .晶圓 104、104a :突出結構 106 :溝槽 10n Jir's shape 'There is a fixed ring _,, the lining W, the contact part is four "points,", meaning two: two honing deformation to reduce the mortar around the wafer 〇 easy to clean the fixed ring: The polishing rate of the wall edge and the purpose of the object. The slurry and grinding by-product between the edges of the soil "day" can be the same as the shape of the inner wall of the 'β fixed ring in the wafer lG2Hj." For example, triangle, five sides ^ Any shape that is different in shape (mountain circle ^) (in the case of a non-circle, in Fig. 3a, a polygon of two/, shape, etc., etc.. 疋 ring 1〇0,,, The shape of the inner wall is, for example, six sides. In addition, depending on the actual demand, the total contact between the wafers is set to further reduce the inner wall of the retaining ring by the circumference of the wafer of the annulus. The contact part between the present invention, any of the above, "and _ to limit the knowledge of the invention, the knowledge of the private sector _ face f knowledge, in the protection of the invention from the tax, '^ to make some changes and run dance' Therefore, this book [simplified in March] is subject to the definition of the application for patent garden. 9 201039976 , , _______ _. /83 twf.doc / n Figure 1 is a top view of a fixing ring for chemical mechanical polishing according to an embodiment of the invention - Figure la is shown in accordance with another embodiment of the present invention 2 is a schematic top view of a fixing ring for chemical mechanical polishing according to still another embodiment of the present invention. FIG. 3 is a schematic view of a fixing ring for chemical mechanical polishing according to still another embodiment of the present invention. Figure 3a is a schematic top view of a retaining ring for chemical mechanical polishing according to still another embodiment of the present invention. 100, 100a, 100, 100", 100", _· fixed ring 102. Wafer 104, 104a: protruding structure 106: trench 10