201027680 六、發明說明： 【發明所屬之技術領域】 本發明通常有關於冷卻電子電路的方法及相關裝置。 因此，本發明係關於電子以及材料科學領域。 【先前技術】 在很多已開發國家中，大部分的人口認為電子裝置對 他們的生活而言係不可獲缺的。這種增加的使用率及依賴 度已經產生對於電子裝置更小、更快速的需求。當電子電 參 路的速度增加而尺寸減少時，這種裝置的冷卻就成了問題。 電子裝置通常包含整體連接有電子元件的印刷電路 板，提供該裝置具有整體性的功能，這些電子元件（如處理 機、電晶體、電阻器、電容器、發光二極體（LEDs)等）會產 生大量的熱量’當熱量增加，其會產生各種與印刷電路板 以及内含的很多電子元件都有關的熱問題（be⑽a丨 problem)，顯著的熱量會影響一電子裝置的可靠性，或甚 〇 至使該電子裝置因為例如在電子元件本身内部以及該印刷 電路板之表面的燒毁或短路而損壞。因此，熱量的增加最 2影響該電子裝置的作用壽命，此特別對於具有高功率與 =電求的電子元件以及對於支撐該等電子it件的印刷 電路板是個難題。 術常常使用各種冷卻裝置’如風扇、散熱器、 ::速水冷裝置等以減少電子裝置中之熱累積。 裝置it fM及1力率隸使得熱4累積提高，這種冷卻 裝置通常必須增知p^ 1 ^ 寸以達到效果，其内部或本身也需要 較大的功率來操作。 ^ ^ ^ ^ 、 例如’風扇必須增加尺寸以及逮度以 4 .201027680 增加氣流，而散熱器必須增加尺寸，以增加熱容量以及表 面積。㈣，對於較小之電子裝置的需求不僅須排除這種 冷卻裝置尺寸的增加，也還需要有顯著縮小的體積。 因此，要尋找方法及相關裝置以在電子裝置尺寸最小 化時提供足夠的冷卻效果，並解決因冷卻所造成的功率限 制問題。 【發明内容】 因此’本發明提供熱動力電子裝置，包括塗佈在一支 Ο 撐基材上的一鑽石材料層以及設置在該鑽石材料層上的電 路’該鐵石材料係配置為加速熱從該電路離開。雖然該鑽 石材料可為任何已知功能為用以加速熱傳遞的鑽石材料， 但該鑽石材料在一態樣中可為類鑽碳。在一特定的態樣中， 該類鑽碳可為非晶碳^在另一態樣中，該鑽石材料可為結 晶鐵石。 各種材料都能考慮作為支撐基材，且任何能夠支採該 鑽石材料層的材料以及相關的電路能考慮於本發明之範_ • 中。例如，該支撐基材的一態樣可為金屬；在一特定態樣 中’該金屬可為鋁；在另一態樣中，該支撐基材可為高分 子材料’該高分子材料非限制性的範例包括聚胺化合物 (polyamines)、聚丙烯酸酯（polyacrylates)、聚醋 (polyesters)、聚醯胺（polyamides)、聚亞醯胺（polyimides)、 聚氨酯（polyurethanes)、多酚（polyphenols)、環氧樹脂 (epoxies)、異氰酸酯（isocyanates)、聚異氰脲酸酯 (polyisocyanurates)、聚矽氧烷（polysiloxanes)、聚乙烯化 合物（polyviny丨s)、聚乙烯（polyethylenes)、聚丙稀 5 201027680 (polypropylenes)、聚苯乙烯（p〇|yStyrenes)、聚硬 (polysulfones)、丙烯腈.丁 二烯·苯乙烯（ac「y|〇n|tr ne_ butadiene-styrene p〇|ymers)、聚丙烯酸（p〇|yacryMcs)、 聚碳酸酯（polycarbonates)及其混合物。一高分子材料之特 定的範例為環氧樹脂。在又一態樣中，該支撐基材可為半 導體材料；半導體材料之特定範例為矽。 本發明也提供一種冷卻電子裝置的方法。這種方法可 包括塗佈一鑽石材料層在一支撐基材上，以及在該鑽石材 ® 料層上沉積具有熱源的電路，以使得熱係從熱源快速離開 而移動到鑽石材料中。各種在鑽石材料層上沉積電路的方 法都能考慮。在一態樣中，沉積電路可包括沉積一未硬化 之導電膠於該鑽石材料上，且硬化該未硬化之導電膠以形 成一硬化之導電電路。在另一態樣中，沉積電路可包括藉 由物理氣相沉積法沉積一導電材料，這種沉積法可進一步 包含沉積一緩衝層於該鑽石材料上，且沉積該導電材料於 該緩衝層上，其中該緩衝層能促進鑽石材料與導電材料之 Φ 的黏者性。在一態樣中，該緩衝層係以鑽石材料形成一 令i化物層各種緩衝層皆能被考慮促進導電材料以及錢石 材料層之間的黏著性。例如，在一態樣中該緩衝層可包括 鉻（chromium)、鈦（titanium)、鶴（tungsten)、鈷（c〇ba|t)、 鉬（molybdenum)、鈕（tanta丨um>、鋁（3_丨num)、鎳 (nickel)、锆（zirconium)、鈮（niobium)及其組合物。 除此之外，能考慮任何導電材料而用以在一緩衝層或 鑽石材料層上形成電路或電路元件。例如，該導電材料在 一態樣中可包括銅（coppe「）、銀（sHver)、金（g〇丨d)、鉑 201027680 (platinum)、銘（aluminum)、欽（titanium)、鎢（tungsten)、 鉬（molybdenum)、其合金及其組合物。在更特定的實施例 中，該導電材料可包括一選自於由銅、銀、金、鉑、其合 金及其混合物所組成之群組的物質。 本發明也提供具有增進之散熱性質的發光二極體裝 置。這種裝置可包括塗佈於一支撐基材上的一鑽石材料層， 以及具有發光二極體的電路，其中該電路係設置於該鑽石 材料層上，且該鑽石材料係配置為加速熱從電路離開。 〇 現在僅概括性且較廣地描述出本發明的各種特徵，因 此在接下來的詳細說明中可更進一步地理解，並且在本領 域所做的貢獻可能會有更佳的領會，而本發明的其他特徵 將會從接下來的詳細說明及其附圖和申請專利範圍中變得 更為清晰’也可能在實行本發明時得知。 【實施方式】 定義 在本發明的敘述與申請專利範圍中，以下術語會依照 〇 以下所提出的定義而被使用。 單數型態字眼如「一」和「該」除非在上下文中清楚 指明為單數’不然亦包括複數對象，因此例如「一熱源」 包括一個或多個這樣的熱源；「該鑽石層」包括一個或多 個這樣的層狀結構。 「熱傳遞（heat transfer)」、「熱移動（heat m〇vement)」 和「熱傳輸（heat transmission)」可互換使用，其係指熱從 溫度較高的區域轉移至溫度較低的區域。熱的轉移是指包 括任何於所屬技術領域具有通常知識者所知的熱轉移機 201027680 制，例如但不限制於傳導、對流以及輻射等。 「動力的（dynamic)」或「動力地（dynamically)」或「熱 動力的（thermally dynamic)」係指材料的的特性，其中該 材料係能主動傳遞能量。通常，該動力材料係主動傳遞熱 能。 「電路（electrica丨 circuitry)」和「電路（Circuitry)」能 相互交換使用’其係用於描述包括晶片級電路（chip丨eve丨 circuitry)和封裝級電路（package level circuitry)二者的電 Φ 路；傾向於讓該封裝級電路也包括印刷電路板電路。 「介電材料（dielectric material)」係用於描述任何具 有顯著電絕緣性質的材料。 「熱源（heat source)」係指具有大於直接鄰近之區域 之熱能或熱量的裝置或物體。例如在印刷電路板中熱源 係該板體的任何比鄰近區域熱的區域。熱源包括製造熱（作 為操作時之副產物）的裝置（在此之後稱為「主要熱源」或「主 動熱源」）以及被熱能或熱轉換而加熱的物件（在此之後稱為 •「次要熱源」或「被動熱源」）。主要或主動熱源的範例包 括但不限制在中央處理機（CPU)、傳導性路徑、LED等。 次要或被動熱源的範例包括但不限制在熱分散器（heat spreaders)、散熱器（heat sinks)等。 「傳導性路徑」和「傳導路徑」係指在印刷電路板或 其他基材上的傳導路線，其能夠導熱、導電或二者。 「氣相沉積物（vapor deposited)」是指一種藉由氣相 沉積法所形成的材料，「氣相沉積法」是指一種藉由氣體 相將物質沉殿在基材上的方法，其包括任何例如，作不限 8 201027680 制為化學氣相沉積法（ChemiCal vapor deposition，CVD)和 物理氣相沉積法（physical vapor deposition, PVD)，每一 氣相沉積法的使用皆可由於本領域具通常知識者在不改變 主要原理的情況下做變動，因此該氣相沉積法的例子包括 熱燈絲化學氣相沉積法（filament CVD)、射頻化學氣相沉積 法（rf-CVD)、雷射化學氣相沉積法（|aser cvd，LCVD)、雷 射剝離法（laser ablation)、同構型鑽石塗佈方法（c〇nf〇rma丨 diamond coating processes)、金屬有機物化學氣相沉積法 ❿ （metal-〇rganiC CVD，MOCVD)、濺鍍、熱蒸發物理氣相沉 積法（thermal evaporation PVD) '離子化金屬物理氣相沉 積法（ionized metal PVD，丨MPVD)、電子束物理氣相沉積法 (electron beam PVD，EBPVD)以及反應物理氣相沉積法 (reactive PVD)等其他類似的方法。 「化學氣相沉積（chemical vapor deposition)」或 「CVD」係指任何以氣相狀態化學沉積鑽石顆粒於一表面 的方法。各種CVD係所屬技術領域具有通常知識者所知悉 ❿ 的。 「物理氣相沉積（physical vapor deposition)」戋 「PVD」係指任何以氣相狀態物理沉積鑽石顆粒於一表面 的方法。各種PVD係所屬技術領域具有通常知識者所知悉 的。 「鑽石（diamond)」是指一種碳原子鍵結至在四角晶格 之結晶形態（即sp3鍵結型態）中其他碳原子的結晶型態，3特 別的是每一碳原子被其他四個各位於正四面體之四角的碳 原子圍繞並鍵結，此外，儘管實驗結果的差值很小，但在 201027680 室溫下實驗後之任兩個碳原子的鍵長為1.54埃，其鍵角為 109度28分16秒，而鑽石的結構與性質，包括許多其物 理及電學性質已為習知的技術，故在此不贅述。 「扭曲四面體配位結構（distorted tetrahedral coordination)」是指不規則破原子的於四面體鍵結配位結 構，或具有脫離了上述正常的鑽石四面體型態，這種扭曲 通常是由於一些鍵被拉長，而其他被縮短，而鍵之間的鍵 角差異也是原因之一。除此之外，這種四面體的扭曲結構 ❹ 改變了碳的特徵與性質，以有效界於以sp3結構鍵結的碳（即 鑽石）以及以sp2結構鍵結的碳（即石墨）之間的特徵，舉例 來說’一個具有鍵結在扭曲四面體鍵結中之碳原子的材料 為非晶鑽石。 「類錢碳（diamond-Mke carbon)」是指主要組成物為 碳原子，且大量的這種碳原子鍵結於一扭曲四面體配位結 構的含破物質，雖然CVD或其他方法也能使用（如氣相沉 積法）’但類鑽碳通常能夠以PVD法所形成。尤其各種其 他包括在類鑽碳材料中的元素為不純物或摻雜物，包括但 不限制為氫、硫、磷、硼、氮、矽、鎢等。 「非晶錢石（amorphous diamond)」係屬於類鑽碳的一 種，其主要元素為碳原子，且大量碳原子鍵結於一扭曲四 面體配位結構。一方面，在非晶鑽石令的碳原子含量至少 約為90% ’其中至少約2〇%的碳原子係屬於扭曲四面體配 位結構。非晶鑽石的原子密度也比一般鑽石（1 76 at〇ms/cm3) 网，而且非晶鑽石與鑽石材料會在熔化時收縮》 關於基材的「塗佈（⑶“）」、「塗層（c〇ating)」以及「被 201027680 塗佈的（coated)」，係指沿著基材至少一部分外表面與一層 導熱材料緊密接觸的面積，且因此達到熱耦合。在一些態 樣中，塗層係實質上覆蓋該基材整體表面的一層狀結構。 在另一態樣中，該塗層可為僅覆蓋該基材部分表面的一層 狀結構。 「實質上地（substantially)」是指步驟、特性、性質、 狀態、結構、項目或結果的完全、接近完全的範圍或程度。 例如，一「實質上」被包覆的物體係指該物體完全被包覆 參或幾乎完全被包覆。而離絕對完全確實可允許的偏差可在 不同情況下依照特定上下文來決定。然而，通常來說接近 完全就如同獲得絕對或完整的完全具有相同的總體結果。 所用的「實質上地」在當使用於負面含意亦同等適用，以 表不完全或接近完全缺乏㈣、特性、性f、狀態、結構、 項目或結果。舉例來說，一「實質上沒有（substant free 〇0」顆粒的組成可為完全缺乏顆粒，或者非常近乎完全缺 乏顆粒’而其影響會如同完全缺乏顆粒—樣。換句話說， P #質上沒有」一成分或元素的組成只要在所關注的特 性上沒有可測量到的影響，可實際上依然包含這樣的物質。 「大約（about)」係可在邊界值「高一些」或「低一些」 的數值，以用於提供-數值範圍之邊界值的彈性。 這裡所述的複數個物品、結構元件、組成元素和/或材 料，基於方便可出現在一般的常見列舉中，然而這些列舉 可解釋為列舉中的單一構件單獨或個別地被定義，因此， 這樣列舉中的單一構件不能視為任何單獨基於在-般族群 中無相反表示之解释的㈣列舉中實際上相等的其他構 11 201027680 件。 濃度、數量以及其他數值上的資料可是以範圍的形式 來加以呈現或表示，而需要瞭解的是這種範圍形式的使用 僅基於方便性以及簡潔，因此在解釋時，應具有相當的彈 性，不僅包括在範圍中明確顯示出來以作為限制之數值， 同時亦可包含所有個別的數值以及在數值範圍中的次範 圍，如同每一個數值以及次範圍被明確地引述出來一般。 例如一個數值範圍「約彳微米到約5微米」應該解釋成不 ® 僅僅包括明確引述出來的約1到約5,同時還包括在此指 定範圍内的每一個數值以及次範圍，因此，包含在此一數 值範圍中的每一個數值，例如2、3及4，或例如u、2_4 以及3-5的次範圍等，以及個別的1、2、3、4和5。 此相同原則適用在僅有引述一數值的範圍中再者， 這樣的說明應該能應用於無論是一範圍的幅度或所述的特 徵中。 本發明 ® 可用於散熱裝置有潛力的材料為鑽石，鑽石材料的傳 熱速率能快過任何其他材料，鑽石在室溫的熱傳導率（約 2000 W/mK)高於銅（約400 w/mK)的五倍，且為鋁（25〇 W/mK)的八倍，其係兩種目前所用熱傳導率最快的兩種金 屬。再者，鑽石的熱擴散率（12.7 cm2/sec)為銅（1彳7 cm2/sec) 或鋁（0.971 cm2/sec)的十一倍。鑽石將熱帶離而不儲存熱 的能力使鑽石成為用於散熱的理想材料。 本發明的態樣係使用鑽石材料以加速將熱由電路有關 的熱點帶離。藉由將電路設置在鑽石材料層上，熱可加速 12 201027680 從電路橫向擴散地穿過該鑽石材料層而遠離，且藉由傳遞 至底部的基材材料而散失4多鑽石材料（㈣是類鑽碳）也 能加速將熱傳遞至空氣中，因此電路能藉由將熱橫向傳遞 過鑽石材料層而有效冷卻，且將熱橫向傳遞時加速熱傳遞 至空氣中。除了熱傳遞的優點之外，該鑽石材料層由於鑽 石的介電特性也能使電路處於電絕緣狀態。 為所屬技術領域中具有通常知識者所熟知從熱引入電 路中之任何熱源形式皆被考慮在本發明之範疇中。熱源在 一態樣中能為主動熱源，且其範例係可為產生熱的電子元 件，這種元件可包括但不限制在電阻器、電容器、電晶體、 具有中央和繪圖處理單元的處理器、LED、雷射二極體、 濾波器等❶熱源也能包括印刷電路板或其他具有高密度傳 導路徑之電路的區域，以及接收從熱源傳遞而來之熱且與 印刷電路板無物理接觸的㈣。其也可包括心物理接觸 狀態的熱源，但並無考慮整合至一印刷電路板。一範例可 為一具有與其耦合之子板的母板，其令熱係從子板傳遞至 母板。 無論熱源為何，在電路中呈現的熱傳遞能加速從熱源 透過在底層之鑽石材料離開。應該注意本發明並不侷限於 特定的熱傳遞理論，因此，從熱源離開的熱加速移動至少 部份是因為熱橫向移動而透過該鑽石材料。由於鑽石熱傳 導的特性，熱能快速地橫向散佈而穿過鑽石材料層，除此 之外’熱加速移動而從熱源離開至少部份是因為從鑽石材 料至空氣中的熱移動。鑽石材料（特別是類鑽碳）即使在100 以下也有卓越的熱發散特徵’因此能將熱直接輻射至空 13 201027680 氣中。报多其他的材料，特別是樹脂、陶究和其他材料可 用乂作為支撐結構，其導熱效果優於其熱發散效果。由於 鑽石材料高的熱傳導以及輻射特性，熱從鑽石材料層移動 至二氣中比從其他支撐結構移動至空氣中更好，因此，鑽 石材料層能將熱引出電路，且在一些情形中是從支撐結構 引出，且因此能夠加速熱從熱源離開而至空氣中。這種加 速的熱傳遞使得電路具有較冷的操作溫度。 從熱源使熱加速傳遞遠離，不僅冷卻相關電路，且藉 ❹自降低施加於鄰近設置的電子元件上之熱而可作為冷卻非 直接與鑽石材料層有關的電路。例如，一具有外部散熱器 和鰭片的t央處理器（CPU)會要求較少的外部冷卻，這是因 為透過印刷電路板經由CPU插座而增進熱傳遞。 因此’在本發明之一態樣中提供一種熱動力電子裝置。 如第一圖所示，這種裝置可包括塗佈於一支撐基材（14)上 的一鑽石材料層（12)以及設置於該鑽石材料層（12)上的電路 (16，18)’該鑽石材料層（12)係配置為加速熱從該電路（16, ® 1 8)遠離《如上所述，傾向於使電路一詞包括任何種類能夠 合併於一電子裝置中的電路元件或電子結構。例如在第一 圖中，標號16可表示傳導路徑；18代表積體電路。然而 應注意的是可依照本發明各種態樣於晶片級和封裝級電路 二者，而使用鐵石材料層，該封裝電路意指包括印刷電路 板。 該支樓基材有塗佈鑽石材料層的部分能依照該電路的 型態和欲使用之目的而有所不同。例如在一態樣中，如第 一圖所示，該鑽石材料層（12)可塗佈於實質上整個支撐基 201027680 材（14)的側邊，其係電路（16，18)將沉積之處。因此，對於 一些電路而言’鑽石材料層可塗佈於該用於支撐電路之支 撐基材的很多表面。如第二圖所示，在另一態樣中，鑽石 材料層（12)可僅有塗佈於支撐基材（14)支撐電路（16，18)的 部份。另外’該鑽石材料層可塗佈於該支撐基材上主要在 電路（圖中未示）熱點的區域。在又另一態樣中，如第三圖所 示’可塗佈額外的鑽石材料層（20)於該支撐基材（14)缺乏電 路的表面，在這種情形中，該額外的鑽石材料層可作為將 β 熱吸引至該支撐基材外且散逸於空氣中。 也能考慮接下來將該電路沉積於該鑽石材料層上，第 二鑽石材料層可進一步沉積於該電路上，以此方式，該電 路係被夾設於一鑽石材料層層之間，因此能進一步增加電 路接觸鑽石材料的面積，且更進一步促進冷卻。再者，關 於沉積鑽石材料層於電路上的細節仍在審査中，於2005年 8月10曰申請之美國專利第11/2〇1771號申請案以及 仍在審查中，於2007年2月14曰申請，代理人編號為 _ 008〇2-24219.C|P，發明名稱為「冷卻電路之方法與裝置」 的美國專利申請案，二者皆能合併於本案中作為參考。 本發明也考慮冷卻電子裝置的方法，包括塗佈一鑽石 材料層於一支撐基材上，且沉積具有至少一熱源的電路於 該鑽石材料上，使得熱能加速地從熱源遠離而移動至鑽石 材料中。 能考慮很多支撐基材’且一支撐基材的選擇能依照要 被沉積之電路的型態以及該電子裝置的預定使用目的而決 定。然而要注意的是任何合適能夠支擇一鑽石材料層以及 15 201027680 相關電路的基材皆能考慮在本發明之範_中。例如在一態 樣中’該支撐基材可包括但不限制在半導體材料、金屬材 料、高分子材料以及其組合物。半導體材料特定的例子可 包括但不限制在矽（silicon)、碳化矽（s丨丨jc〇n ca「bide)、矽 化鍺（silicon germanium)、砷化鎵（ga 丨丨 ium a「sen|de)、氮 化鎵（gallium nitride)、鍺（germanium)、硫化鋅（z丨nc sulfide)、填化鎵（gamum phosphide)、銻化鎵（gamum antimonide)、砷麟化鎵銦（ga丨丨ium indium抓即丨如 〇 phosPhide)、磷化鋁（aluminum phosphide)、砷化鋁 (aluminum arsenide)、砷化鋁鎵（a|uminum ga丨丨ium arsenide)、氮化鎵（gamum nit「ide)、氮化硼（b〇r〇n nUride)、 氮化鋁（a 山 minum nitride)、砷化銦（jncjium arsenide)、鱗 化銦（indium phosphide)、銻化銦（incnum antimonide)、氮 化銦（indium nitride)以及其組合物。在另一態樣中，該半 導體材料可包括但不限制在矽、碳化矽、砷化鎵氮化鎵、 磷化鎵、氮化鋁、氮化銦、氮化銦鎵、氮化鋁鎵或這些材 ® 料的組合物。在一特定的態樣中，該半導體材料可為矽。 在另一特定態樣中，該半導體材料可為碳化矽。在一些额 外的實施例中，非矽基支撐材料可包括砷化鎵、氮化鎵、 鍺、氮化硼、氮化鋁、銦基材料以及其複合物。在另一態 樣中，該半導體材料包括氮化鎵、氮化銦鎵、氮化銦以及 其組合物。在一特定的態樣中，該半導體材料為氮化鎵。 在另一特定的態樣中，該半導體材料為氮化鋁。其他可用 的半導體材料包括氧化鋁（八丨2〇3)、氧化鈹（Be〇)、鎢、 翻（M〇)、c-氧化纪化纪鑭（c(Y〇9La。彳）2〇3)、 16 201027680 c-氮氧化鋁（C-AI23027N5)、C-氧化鎂鋁（c-MgAI2〇4)、t-氟化 鎂（t-MgF2)、石墨（graphite)以及其混合物。需要了解的是 該支撐基材可包括任何已知的半導體材料，而且不應限制 在這裡所述的材料。另外，半導體材料可呈現任何已知的 結構型態，例如但不限制在立方（£；1|5比）（閃鋅礦（2丨11〇1)16"6 or sphalerite))、纖維碌型 （wurtzitic)、菱形六面體 (rhombohedral)、石墨狀（graphitic)、亂層結構狀 (turbostratic)、熱分解（pyro丨ytic)、六角形（hexagonal)、 參 非晶型（amorphous)以及其組合構型。 在另一態樣中，該支撐基材可為金屬材料，金屬材料 可用於任何情形’因為在很多情形中金屬相對地容易操作。 任何能夠根據本發明各種態樣而做為基材的金屬材料應被 考慮於本發明之範疇中。這種金屬材料的一範例為鋁，其 他非限制性的範例可包括錫、銅、不鎮鋼等。 當使用很多金屬材料作為支撐基材時，可藉由各種碳 化物或碳化物形成材料幫助一鑽石材料層沉積於其上。碳 ❹ 化物形成材料的範例可包括但不限制在鎢（W)、鈕（Ta)、鈦 (Ti)、鍅（Zr)、鉻（Cr)、翻（Mo)、矽（Si)和猛（Μη)。除此之 外’碳化物非限制性的範例包括碳化鎢（WC)、碳化發（SiC)、 碳化欽（TiC)、碳化锆（ZrC)以及其混合物。 在另一態樣中，該支樓基材可為高分子材料，有用的 高分子材料非限制性的範例包括聚胺化合物 (polyamines)、聚丙稀酸酯（p0|yacry|ates)、聚醋 (polyesters)、聚醯胺（polyamides)、聚亞醯胺（p0|yimjdes)、 聚氨酯（polyurethanes)、多酚（p0|yphen0丨s)、環氧樹脂 17 201027680 (epoxies)、異氰酸酯（isocyanates)、聚異氰脲酸酯 (polyisocyanurates)、聚石夕氧烧（p0|ySj|oxaries)、聚乙稀化 合物（polyvinyls)、聚乙烯（p〇丨yethy|enes)、聚丙烯 (polypropylenes)、聚苯乙稀（p〇丨ystyrenes)、聚砜 (polysu 丨 fones)、丙烯腈 _ 丁二烯 _ 苯乙烯（acry|〇nUrne_ butadiene-styrene p〇丨ymers)、聚丙烯酸（p〇丨yacryHcs)、 聚碳酸酯（polycarbonates)及其混合物。一高分子材料之特 定的範例係包括環氧樹脂。 0 如已經建議的，可使用各種鑽石材料以將熱從電路傳 遞出去，忐夠促進熱傳遞之任何形式的鑽石材料可因此被 考慮於本發明之範疇中。例如但不限制在該鑽石材料可包 括類鑽碳、非晶鑽石以及結晶鑽石，包括單晶以及多晶鑽 石。除此之外，該鑽石材料層可為任何能夠作用為幫助熱 從電路傳遞出去的厚度。然而在一特定的態樣中，該鑽石 材料層可具有從約0.1至約100.0微米的厚度。在另一特 定的態樣中，該鑽石層可具有從約〇1至約2〇 〇微米的厚 ❹度。 在此所述的鑽石材料層可使用任何已知的方法來形成 在一基材上，若能得到相似的特性以及結果，雖然任何類 似的方法皆能使用，但最常見的氣相沉積法包括化學氣相 沉積法（CVD)和物理氣相沉積法（PVD)。在一態樣中，cVD 法如可使用熱燈絲氣相沉積法（fMament CVD)、微波電漿氣 相沉積法（microwave plasma)、乙炔火焰氣相沉積法 (oxyacetylene f丨ame)、射頻化學氣相沉積法（「f cvD)、雷 射化學氣相沉積法（|aser CVD，LCVD)、金屬有機物化學氣 18 201027680 相沉積法（^1613卜0「9311丨0〇\/0，1\/10〇\/0)、雷射剝離法（丨356「 ablation)、同構型鑽石鍍膜方法（conformal diamond coating processes)以及直流電弧技術（direct current arc techniques)。一般的CVD法係使用氣體反應劑來沉積該鑽 石或類鑽碳成層狀或膜狀結構，這些氣體通常包括以氫氣 稀釋之少量（即少於約5〇/〇)的碳化物材料，如甲烷。各種特 定的CVD製程（包括儀器和條件）以及使用於氮化硼層的 CVD製程皆係所屬技術領域中具有通常知識者所熟知的。 〇 在另一態樣中，可使用PVD技術如濺鍍、熱蒸發物理氣相 沉積法（thermal evaporation PVD)、離子化金屬物理氣相 沉積法（ionized meta丨PVD, IMPVD)、電子束物理氣相沉積 法（electron beam PVD，EBPVD)以及反應物理氣相沉積 法（reactive PVD)皆可使用。除此之外，應該注意可使用特 定的沉積條件以調整要被沉積之特定種類的材料，如類鑽 碳、非晶鑽石或結晶鑽石。 為了更增進熱傳遞的特性，在本發明之一態樣中該鑽 參石材料層可為同構型鑽石材料層。同構型鑽石材料塗佈技 術能提供很多比既有鑽石成膜技術更好的優點，同構型鑽 石塗佈能實施於各種基材（包括非平面的基材），一生長表面 能在缺乏偏壓之生長條件下前處理以形成一碳膜，該鑽石 生長條件可為既有CVD沉積鑽石的條件而無施加偏壓，結 果形成-薄的碳膜’其通常係小於約⑽埃（angst_s); 能在大致任何的生長溫度實施該前處理步驟例如雖然於 低於約500°C《較低溫度為較佳的，但從約2〇〇<^至約_ °C皆可使用。並無結合任何較的理論，該薄的碳膜出現 19 201027680 形成時係在一短的時間之内，例如短於一小時且係一 端（hydrogen terminated)的無晶碳。在這種前處理之後氫 該薄的碳膜在施以鑽石生長條件下形成同構型鑽石材料 層。鑽石生長條件係那些常用於傳統CVD鑽石生長的條件\ 然而，不像既有的鑽石膜的生長，在使用過前述前處理步 驟後所產生以同構型鑽石膜形式存在的鑽石膜，再者，該 鑽石膜通常開始生長於實質上整體基材上，且實質上無^ 育期（incubation time)。除此之外，一連續膜（例如實質上 瘳 無晶界）能在約80nm以内之生長中發展。 將該鑽石材料層沉積在該支撐基材上後，電路可沉積 於其上，應該了解的是各種沉積電路於鑽石材料層上的各 種方法都是可能的’特別要考慮各種被沉積之電路以及電 路元件，因此’這種沉積的任何技術皆被考慮於本發明之 範疇中’且之後的敘述並不會視為是限制。 在一態樣中，電路可藉由施加未硬化之導電膠於該鑽 石材料上表示想要之電路的圖案而沉積於鑽石材料層上， ® 且硬化該導電膠以形成硬化之導電電路。該未硬化之導電 膠能藉由任何已知的方法施加，然而在一特定的態樣中， 該導電膠可藉由各種網版印刷技術施加。雖然可使用任何 的導電膠’但特定非限制性的範例可包括銅膠、銀膠、金 膠、始膠以及其組合物。在加熱這種膠的過程中，一導電 電路可形成於該鑽石材料層上，舉例來說，銅和銀膠可網 版印刷於該鑽石材料層上，且在約1501和200°C之間的溫 度硬化約30至約60分鐘。 在另一態樣中，一導電金屬可藉由PVD技術（例如但 201027680 不限制在陰極電弧法、濺鍍以及電子束蒸鍍法等）直接沉積 於該鐵石材料層上，然而很多導電金屬無法良好地貼附於 鑽石表面，在這種情形中，一緩衝層可施加於該鑽石材料 ' 'a加PVD /儿積之電路的附著性。雖然緩衝層的選擇 可依照所用之鑽石材料和導電金屬的種類而有所不同，但 在一態樣中，緩衝層非限制性的範例可包括鉻（chr〇m…⑺）、 ^(titanium)^(tungsten)^(cobalt)^ (molybdenum)^ 组（tantalum)、銘（aluminum)、錄（nicke|)、錯⑵「c〇njum)、 _ 銳（niobium)及其組合物。在—特定的態樣巾，鑽石材料可 匕括類錢碳、該導電金屬為銅或銀，且該緩衝層可為路或 欽再者，在一態樣中，該緩衝層可形成碳化物層於該鑽 石材料上，以促進沉積於其上之導電金屬的附著性，例如 碳化鉻或碳化鈦能促進銅或銀導電金屬於一類鑽碳層上的 附著性。舉例來說’ -緩衝層可使用一具有大於約觸伏 特（V)之偏麼的高能塗佈法沉積以在該緩衝層以及鑽石材料 之間形成碳化物層，接著以一具有大於約5〇v至約1〇〇 v ® 之偏壓的低能塗佈法以増厚該緩衝層至所要的厚度。除此 之外’在一些態樣中，豸鑽石#料可漸次地進入該緩衝層 中以減少在層狀結構之間不連續的晶格過渡變化。例如， 當沉積該鑽石材料層時，沉積該緩衝層之原子的百分比會 慢慢地增加以在該鑽石材料以及該碳化物緩衝層之間提供 逐步的過渡變化。在該緩衝層沉積之後，該導電金屬可沉 積於該缓衝層上。 也要考慮本發明包括與led裝置有關的態樣。t led 變得對於電子學和發光裝置更具重要性，其持續發展且出 21 201027680 現增加功率的需求，此增加功率的趨勢使得這些裝置產生 冷卻的問題，這些冷卻問題因著這些裝置一般的小尺寸而 更趨嚴重，且因為具有傳統銘散熱錄片的散熱器龐大的體 積特性，使其無法使用。不過本發明者已經發現整合鑽石 材料至LED封裝體中，即使在非常高功率的情形下也會產 生足夠的冷卻效果，此時也維持小的LED封裝體尺寸。 因此，如第四圖所示，本發明之一態樣可包括一具有 增進之散熱特性的LED裝置。肖LED裝置可包括塗佈於— ©支撐基材（32)上的一鑽石材料層（3〇)以及設置於該鑽石材料 層（3〇)上的各種電路（34)，一發光二極體（36>可耦合於該鑽 石材料層（30)，且電耦合於該電路（34) ^該鑽石材料層（3〇) 因此配置為加速熱遠離電路以及從LED遠離，這種配置讓 D在比不具有鑽石材料層之led封裝體冷的溫度中操 作。 當然’需要瞭解的是以上所述之排列皆僅是在描述本 ❹ 發明原則的應用’許多改變及不同的排列亦可以在不脫離 本發明之精神和範圍的情況下被於本領域具通常知識者所 設想出來’而申請範圍也涵蓋上述的改變和排列。因此， 儘管本發明被特定及詳述地描述呈上述最實用和最佳實施 例’於本領域具通常知識者可在不偏離本發明的原則和觀 點的情況下做許多如尺寸、材料、形狀、樣式、功能、操 作方法、組裝和使用等變動。 【圖式簡單說明】 第一圖係本發明一實施例中一電路裝置的剖面圖。 第二圖係本發明一實施例中一電路裝置的剖面圖。 22 201027680 第三圖係本發明一實施例中一電路裝置的剖面圖。 第四圖係本發明一實施例中一 LED裝置的剖面圖。 【主要元件符號說明】 (12) (30)鑽石材料層 (14) (32)支撐基材 (16) (18) (34)電路 (20)額外的鑽石材料層 (36)發光二極體201027680 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention generally relates to a method and related apparatus for cooling an electronic circuit. Accordingly, the present invention is directed to the fields of electronics and materials science. [Prior Art] In many developed countries, most of the population believes that electronic devices are indispensable for their lives. This increased usage and dependency has created a smaller, faster need for electronic devices. Cooling of such devices becomes a problem as the speed of the electronic circuit increases and the size decreases. Electronic devices typically include a printed circuit board that is integrally connected with electronic components to provide a holistic function of the device, such as processors, transistors, resistors, capacitors, LEDs, etc. A large amount of heat 'when heat increases, it produces various thermal problems related to printed circuit boards and many of the electronic components contained therein (be(10)a丨problem), significant heat affects the reliability of an electronic device, or even The electronic device is damaged by, for example, burning or shorting inside the electronic component itself and the surface of the printed circuit board. Therefore, the increase in heat most affects the operational life of the electronic device, which is particularly problematic for electronic components having high power and electrical requirements and for printed circuit boards supporting such electronic components. Various cooling devices such as fans, radiators, ::speed water cooling devices, etc., are often used to reduce heat buildup in the electronic device. The device it fM and 1 force rate increase the heat 4 accumulation. Such a cooling device usually has to know p ^ 1 ^ inch to achieve the effect, and it needs internal power or itself to operate with a large power. ^ ^ ^ ^ , For example, the fan must be increased in size and the catch is increased by 4.201027680, and the heat sink must be increased in size to increase heat capacity and surface area. (d) The need for smaller electronic devices not only eliminates the increase in the size of such cooling devices, but also requires a significantly reduced size. Therefore, methods and related devices are sought to provide sufficient cooling when the size of the electronic device is minimized, and to solve the power limitation problem caused by cooling. SUMMARY OF THE INVENTION Accordingly, the present invention provides a thermodynamic electronic device including a layer of diamond material coated on a susceptor substrate and a circuit disposed on the layer of diamond material. The stone material is configured to accelerate heat from The circuit leaves. While the diamond material can be any diamond material known to function to accelerate heat transfer, the diamond material can be diamond-like carbon in one aspect. In a particular aspect, the diamond-like carbon may be amorphous carbon. In another aspect, the diamond material may be a crystalline iron. A variety of materials can be considered as support substrates, and any material capable of supporting the diamond material layer and associated circuitry can be considered in the context of the present invention. For example, one aspect of the support substrate may be a metal; in a particular aspect, 'the metal may be aluminum; in another aspect, the support substrate may be a polymer material'. The polymer material is not limited. Examples of properties include polyamines, polyacrylates, polyesters, polyamides, polyimides, polyurethanes, polyphenols, Epoxyes, isocyanates, polyisocyanurates, polysiloxanes, polyviny丨s, polyethylenes, polypropylene 5 201027680 ( Polypropylenes, polystyrene (p〇|yStyrenes), polysulfones, acrylonitrile, butadiene styrene (ac"y|〇n|tr ne_ butadiene-styrene p〇|ymers), polyacrylic acid ( P〇|yacryMcs), polycarbonates and mixtures thereof. A specific example of a polymer material is an epoxy resin. In another aspect, the support substrate can be a semiconductor material; The invention also provides a method of cooling an electronic device. The method can include coating a layer of diamond material on a support substrate, and depositing a circuit having a heat source on the diamond material layer to The thermal system moves away from the heat source and moves into the diamond material. Various methods of depositing the circuit on the diamond material layer can be considered. In one aspect, the deposition circuit can include depositing an uncured conductive paste on the diamond material, And hardening the uncured conductive paste to form a hardened conductive circuit. In another aspect, the deposition circuit may include depositing a conductive material by physical vapor deposition, the deposition method further comprising depositing a buffer layer On the diamond material, and depositing the conductive material on the buffer layer, wherein the buffer layer can promote the adhesion of the diamond material to the Φ of the conductive material. In one aspect, the buffer layer is formed of a diamond material. Various buffer layers of the i-layer can be considered to promote adhesion between the conductive material and the layer of the rock stone material. For example, in one aspect the buffer layer can include (chromium), titanium (titanium), crane (tungsten), cobalt (c〇ba|t), molybdenum, button (tanta丨um), aluminum (3_丨num), nickel (nickel), zirconium ( Zirconium), niobium and combinations thereof. In addition, any conductive material can be considered for forming a circuit or circuit component on a buffer layer or layer of diamond material. For example, the conductive material may include copper (coppe "), silver (sHver), gold (g〇丨d), platinum 201027680 (platinum), aluminium, titanium, tungsten (tungsten) in one aspect. Molybdenum, alloys thereof, and combinations thereof. In a more specific embodiment, the electrically conductive material may comprise a group selected from the group consisting of copper, silver, gold, platinum, alloys thereof, and mixtures thereof. The present invention also provides a light-emitting diode device having improved heat dissipation properties. The device may include a layer of diamond material coated on a support substrate, and a circuit having a light-emitting diode, wherein the circuit The diamond material is disposed on the layer of diamond material, and the diamond material is configured to accelerate heat away from the circuit. 〇 The various features of the present invention are now only described broadly and broadly, and thus may be further described in the following detailed description. It will be appreciated that the contributions made in the art may be better appreciated, and other features of the present invention will become apparent from the following detailed description and the accompanying drawings and claims. In the practice of the present invention, it is to be understood that the following terms are used in accordance with the definitions set forth below. The singular types of words such as "one" and "the" are defined in the scope of the present invention. Unless the context clearly indicates a singular 'others, the plural includes the plural, such as "a heat source" includes one or more of such heat sources; "the diamond layer" includes one or more such layered structures. "Heat transfer", "heat m〇vement" and "heat transmission" are used interchangeably to mean that heat is transferred from a higher temperature zone to a lower temperature zone. Heat transfer is meant to include any heat transfer machine known in the art to those skilled in the art, such as, but not limited to, conduction, convection, and radiation. "dynamic" or "dynamically" or "thermally dynamic" refers to the property of a material that actively transfers energy. Typically, this motive material actively transfers heat. "Electrical circuits" and "Circuitry" can be used interchangeably to describe the electrical Φ including both chip-level circuits and package level circuitry. Road; tends to make the package-level circuit also include printed circuit board circuits. "Dielectric material" is used to describe any material that has significant electrical insulating properties. "heat source" means a device or object having greater than the thermal energy or heat of a directly adjacent region. For example, in a printed circuit board, the heat source is any area of the board that is hotter than adjacent areas. The heat source includes a device that manufactures heat (as a by-product of the operation) (hereinafter referred to as "main heat source" or "active heat source") and an object that is heated by heat or heat conversion (hereinafter referred to as "secondary" Heat source or "passive heat source"). Examples of primary or active heat sources include, but are not limited to, central processing units (CPUs), conductive paths, LEDs, and the like. Examples of secondary or passive heat sources include, but are not limited to, heat spreaders, heat sinks, and the like. "Conductive path" and "conducting path" refer to a conductive path on a printed circuit board or other substrate that is capable of being thermally conductive, electrically conductive, or both. "Vapor deposited" means a material formed by vapor deposition, and "vapor deposition" means a method of depositing a substance on a substrate by a gas phase, which includes Any example, for example, 201027680 is a chemical vapor deposition (CVD) method and a physical vapor deposition (PVD), and each vapor deposition method can be used in the field. The knowledgeer does not change the main principle, so examples of the vapor deposition method include filament CVD, radio frequency chemical vapor deposition (rf-CVD), and laser chemical gas. Phase deposition method (|aser cvd, LCVD), laser ablation, c〇nf〇rma丨diamond coating processes, metal organic chemical vapor deposition (❿-metal- 〇rganiC CVD, MOCVD), sputtering, thermal evaporation PVD 'ionized metal PVD, 丨MPVD, electron beam physics Other similar methods such as electrode beam PVD (EBPVD) and reactive physical vapor deposition (reactive PVD). "Chemical vapor deposition" or "CVD" means any method of chemically depositing diamond particles on a surface in a gaseous state. The various technical fields of CVD are known to those of ordinary skill in the art. "Physical vapor deposition" 「 "PVD" means any method of physically depositing diamond particles on a surface in a gas phase state. The various technical fields of PVD are known to those of ordinary skill in the art. "Diamond" refers to a crystalline form in which a carbon atom is bonded to other carbon atoms in the crystalline form of the tetragonal lattice (ie, sp3 bonding type), and 3 is that each carbon atom is replaced by four other carbon atoms. The carbon atoms located at the four corners of the regular tetrahedron are surrounded and bonded. In addition, although the difference in experimental results is small, the bond length of any two carbon atoms after the experiment at room temperature of 201027680 is 1.54 angstroms, and the bond angle It is 109 degrees 28 minutes and 16 seconds, and the structure and properties of diamonds, including many of its physical and electrical properties, are well known and will not be described here. "Distorted tetrahedral coordination" refers to a tetrahedral bond coordination structure of an irregularly broken atom, or a tetrahedral type that is detached from the above normal. This distortion is usually due to some bonds. It is stretched, while others are shortened, and the difference in bond angle between the keys is also one of the reasons. In addition, this tetrahedral twisted structure 改变 changes the characteristics and properties of carbon to effectively bind between carbon bonded by sp3 structure (ie diamond) and carbon bonded by sp2 structure (ie graphite). The characteristic, for example, 'a material having a carbon atom bonded in a twisted tetrahedral bond is an amorphous diamond. "Diamond-Mke carbon" means that the main constituent is a carbon atom, and a large number of such carbon atoms are bonded to a torn tetrahedral coordination structure, although CVD or other methods can be used. (such as vapor deposition) 'But diamond-like carbon can usually be formed by PVD method. In particular, various other elements included in the diamond-like carbon material are impurities or dopants including, but not limited to, hydrogen, sulfur, phosphorus, boron, nitrogen, antimony, tungsten, and the like. "Amorphous diamond" is a type of diamond-like carbon whose main element is a carbon atom and a large number of carbon atoms are bonded to a twisted tetrahedral coordination structure. In one aspect, the carbon atoms in the amorphous diamond have a carbon atom content of at least about 90%' wherein at least about 2% of the carbon atoms belong to a twisted tetrahedral coordination structure. The atomic density of amorphous diamonds is also higher than that of ordinary diamonds (1 76 at 〇ms/cm3), and amorphous diamonds and diamond materials shrink when melted. "Coating ((3)")", "Coating" (c〇ating) and "coated by 201027680" refer to the area in which at least a portion of the outer surface of the substrate is in intimate contact with a layer of thermally conductive material, and thus achieves thermal coupling. In some aspects, the coating substantially covers a layered structure of the overall surface of the substrate. In another aspect, the coating can be a layered structure that only covers the surface of the portion of the substrate. "Substantially" means the complete, near-complete extent or extent of a step, characteristic, property, state, structure, project, or result. For example, a "substantially" coated system means that the object is completely coated or almost completely coated. Deviations from absolute full allowable deviations can be determined in different situations depending on the specific context. However, in general it is almost as complete as obtaining absolute or complete results with the same overall result. The use of "substantially" is equally applicable when used in a negative sense to indicate incomplete or near complete absence (4), characteristics, sexuality f, state, structure, project or outcome. For example, a "substantially 〇0" particle composition can be completely devoid of particles, or very nearly completely devoid of particles, and its effect will be like a complete lack of particles. In other words, P #质上No. The composition of a component or element may actually contain such a substance as long as it has no measurable effect on the characteristics of interest. "About" can be "higher" or "lower" at the boundary value. The numerical value used to provide the elasticity of the boundary value of the -value range. The plurality of articles, structural elements, constituent elements and/or materials described herein may appear in the general list of commons based on convenience, however, these enumerations may It is to be construed that a single component in the list is defined individually or individually, and therefore, a single component in such an enumeration cannot be regarded as any other structure that is actually equivalent based on the (four) enumeration in the general group without the opposite representation. 201027680 The concentration, quantity, and other numerical data can be presented or expressed in terms of ranges, but what needs to be understood is The use of a range of forms is based on convenience and conciseness, and therefore should be interpreted with considerable flexibility, including not only the values explicitly indicated in the range, but also all individual values and values. The sub-range, as each value and sub-range are explicitly quoted. For example, a range of values "about 彳 micron to about 5 microns" should be interpreted as not including only about 1 to about 5 explicitly quoted, Each of the numerical values and sub-ranges within the specified range are included, and therefore, each of the numerical values included in the numerical range, such as 2, 3, and 4, or sub-ranges such as u, 2_4, and 3-5, and the like, and Individuals 1, 2, 3, 4, and 5. This same principle applies to only a range of values, and such description should be applicable to either a range of magnitudes or features described. ® The material that can be used for heat sinks is diamond. The heat transfer rate of diamond material is faster than any other material. The thermal conductivity of diamond at room temperature (about 2000 W/ mK) is five times higher than copper (about 400 w/mK) and eight times that of aluminum (25 〇 W/mK), which is the two metals with the fastest thermal conductivity currently used. The thermal diffusivity (12.7 cm2/sec) is eleven times that of copper (1彳7 cm2/sec) or aluminum (0.971 cm2/sec). The ability of diamonds to leave the tropics without storing heat makes diamonds ideal for heat dissipation. The aspect of the invention uses a diamond material to accelerate the removal of heat from the circuit-related hotspot. By placing the circuit on the layer of diamond material, the heat can accelerate through the layer of diamond material from the lateral diffusion of the circuit 12 201027680 And away from, and by dissipating more than 4 diamond materials ((4) is diamond-like carbon) by transferring the substrate material to the bottom, the heat can be transferred to the air, so the circuit can be transferred laterally through the layer of diamond material. Effective cooling and accelerated heat transfer to the air as the heat is transferred laterally. In addition to the advantages of heat transfer, the diamond material layer also allows the circuit to be electrically insulated due to the dielectric properties of the rock. Any form of heat source known from the art of heat introduction into the art is well within the scope of the present invention. The heat source can be an active heat source in one aspect, and an example thereof can be a heat generating electronic component, which can include, but is not limited to, a resistor, a capacitor, a transistor, a processor having a central and graphics processing unit, Heat sources such as LEDs, laser diodes, filters, etc. can also include printed circuit boards or other areas of circuits with high-density conduction paths, as well as receiving heat transferred from a heat source and having no physical contact with the printed circuit board (4) . It may also include a heat source in the physical contact state of the heart, but does not consider integration into a printed circuit board. An example would be a motherboard having a daughter board coupled thereto that transfers the thermal system from the daughter board to the motherboard. Regardless of the heat source, the heat transfer in the circuit accelerates the exit of the diamond material from the heat source through the underlying layer. It should be noted that the invention is not limited to a particular heat transfer theory, and therefore, the thermal acceleration movement away from the heat source is at least in part due to the lateral movement of the heat through the diamond material. Due to the nature of the thermal conduction of the diamond, the thermal energy rapidly spreads laterally through the layer of diamond material, in addition to which the thermal acceleration moves away from the heat source at least in part because of the heat transfer from the diamond material to the air. Diamond materials (especially diamond-like carbon) have excellent heat dissipation characteristics even below 100, so they can radiate heat directly into the air. Many other materials, especially resins, ceramics and other materials, can be used as support structures, and their thermal conductivity is superior to their heat dissipation. Due to the high thermal conductivity and radiation characteristics of the diamond material, it is better to move heat from the layer of diamond material to the second gas than to move it from other support structures to the air. Therefore, the layer of diamond material can pull heat out of the circuit and, in some cases, from The support structure is extracted and thus can accelerate the exit of heat from the heat source into the air. This accelerated heat transfer allows the circuit to have a cooler operating temperature. The accelerated transfer of heat away from the heat source not only cools the associated circuitry, but also acts as a circuit for cooling the layer associated with the diamond material by reducing the heat applied to the adjacent disposed electronic components. For example, a central processing unit (CPU) with external heat sinks and fins would require less external cooling because of the increased heat transfer through the CPU socket through the printed circuit board. Thus, a thermodynamic electronic device is provided in one aspect of the invention. As shown in the first figure, such a device can include a layer of diamond material (12) coated on a support substrate (14) and circuitry (16, 18) disposed on the layer (12) of diamond material. The layer of diamond material (12) is configured to accelerate heat away from the circuit (16, ® 18) away from "as described above, and tends to include the term circuit as any type of circuit component or electronic structure that can be incorporated into an electronic device. . For example, in the first figure, reference numeral 16 may denote a conductive path; and 18 denotes an integrated circuit. It should be noted, however, that various layers of wafer level and package level circuitry can be used in accordance with the present invention, while a layer of stone material is used, which package circuit is meant to include a printed circuit board. The portion of the support substrate having a layer of coated diamond material can vary depending on the type of circuit and the purpose for which it is intended to be used. For example, in one aspect, as shown in the first figure, the diamond material layer (12) can be applied to substantially the side of the entire support substrate 201027680 (14), and the circuitry (16, 18) will be deposited. At the office. Thus, for some circuits, a layer of diamond material can be applied to many of the surfaces of the support substrate used to support the circuit. As shown in the second figure, in another aspect, the diamond material layer (12) may be applied only to portions of the support substrate (14) supporting circuitry (16, 18). In addition, the layer of diamond material can be applied to the support substrate primarily in the area of the circuit (not shown). In yet another aspect, as shown in the third figure, an additional layer of diamond material (20) may be coated on the support substrate (14) lacking the surface of the circuit, in which case the additional diamond material The layer acts as a heat attraction to the outside of the support substrate and dissipates into the air. It is also contemplated that the circuit is subsequently deposited on the layer of diamond material, and a second layer of diamond material can be further deposited on the circuit, in such a manner that the circuit is sandwiched between layers of a diamond material, thereby enabling Further increasing the area of the circuit in contact with the diamond material further promotes cooling. Furthermore, the details of the circuit on the deposited diamond material layer are still under review, and the application of US Patent No. 11/2〇1771, filed on August 10, 2005, and still under review, on February 14, 2007曰 , , 代理 代理 代理 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 -24 。 。 。 。 。 。 。 。 。 The present invention also contemplates a method of cooling an electronic device comprising coating a layer of diamond material on a support substrate and depositing a circuit having at least one heat source on the diamond material such that thermal energy is accelerated away from the heat source to the diamond material. in. A plurality of support substrates can be considered and the choice of a support substrate can be determined in accordance with the type of circuit to be deposited and the intended use of the electronic device. It should be noted, however, that any suitable substrate capable of selecting a layer of diamond material and 15 201027680 related circuitry can be considered in the context of the present invention. For example, in one aspect the support substrate can include, but is not limited to, a semiconductor material, a metal material, a polymeric material, and combinations thereof. Specific examples of semiconductor materials may include, but are not limited to, silicon, tantalum carbide (s丨丨jc〇n ca "bide", silicon germanium, gallium arsenide (ga 丨丨ium a"sen|de ), gallium nitride, germanium, zinc sulfide, gamum phosphide, gamum antimonide, gallium arsenide Indium captures such as phosPhide, aluminum phosphide, aluminum arsenide, a|uminum ga丨丨ium arsenide, gallium nit "ide", Boron nitride (b〇r〇n nUride), aluminum nitride (a mountain minum nitride), indium arsenide (jncjium arsenide), indium phosphide, indium antimonide, indium nitride (indium bismuth) Indium nitride) and compositions thereof. In another aspect, the semiconductor material can include, but is not limited to, tantalum, tantalum carbide, gallium arsenide gallium nitride, gallium phosphide, aluminum nitride, indium nitride, nitride Indium gallium, aluminum gallium nitride or a combination of these materials. In a particular aspect, the semiconductor material In another particular aspect, the semiconductor material can be tantalum carbide. In some additional embodiments, the non-ruthenium based support material can include gallium arsenide, gallium nitride, germanium, boron nitride, nitrogen. In another aspect, the semiconductor material comprises gallium nitride, indium gallium nitride, indium nitride, and combinations thereof. In a particular aspect, the semiconductor material In another specific aspect, the semiconductor material is aluminum nitride. Other useful semiconductor materials include aluminum oxide (barium oxide), germanium oxide (Be〇), tungsten, and (M) 〇), c-oxidation 化 化 镧 (c(Y〇9La.彳) 2〇3), 16 201027680 c-aluminum oxide (C-AI23027N5), C-magnesium aluminum (c-MgAI2〇4), T-magnesium fluoride (t-MgF2), graphite, and mixtures thereof. It is to be understood that the support substrate can comprise any known semiconductor material and should not be limited to the materials described herein. The material may take on any known structural form, such as but not limited to cubic (£; 1 | 5 ratio) (sphalerite ( 2丨11〇1)16"6 or sphalerite)), wurtzitic, rhombohedral, graphitic, turbostratic, pyro丨ytic , hexagonal, amorphous, and combinations thereof. In another aspect, the support substrate can be a metallic material that can be used in any situation' because the metal is relatively easy to handle in many cases. Any metal material that can be used as a substrate in accordance with various aspects of the present invention should be considered in the context of the present invention. An example of such a metallic material is aluminum, and other non-limiting examples may include tin, copper, stainless steel, and the like. When a plurality of metallic materials are used as the supporting substrate, a layer of diamond material can be deposited thereon by various carbide or carbide forming materials. Examples of the carbon halide forming material may include, but are not limited to, tungsten (W), button (Ta), titanium (Ti), bismuth (Zr), chromium (Cr), turn (Mo), bismuth (Si), and fierce ( Μη). In addition to this, non-limiting examples of carbides include tungsten carbide (WC), carbonized hair (SiC), carbon carbide (TiC), zirconium carbide (ZrC), and mixtures thereof. In another aspect, the support substrate may be a polymer material, and non-limiting examples of useful polymer materials include polyamines, polyacrylates (p0|yacry|ates), and polyacetate. (polyesters), polyamides, polyamidamine (p0|yimjdes), polyurethanes, polyphenols (p0|yphen0丨s), epoxy resin 17 201027680 (epoxies), isocyanates, isocyanates, Polyisocyanurates, polyoxocyanurates (p0|ySj|oxaries), polyethylenes (polyvinyls), polyethylene (p〇丨yethy|enes), polypropylenes, polyphenyls Ethyl (p〇丨ystyrenes), polysulfone (polysu 丨fones), acrylonitrile _ butadiene styrene (acry|〇nUrne_ butadiene-styrene p〇丨ymers), polyacrylic acid (p〇丨yacryHcs), poly Polycarbonates and mixtures thereof. A specific example of a polymer material includes an epoxy resin. 0 As has been suggested, various diamond materials can be used to transfer heat away from the circuit, and any form of diamond material that promotes heat transfer can therefore be considered in the context of the present invention. For example, but not limited to, the diamond material may include diamond-like carbon, amorphous diamond, and crystalline diamond, including single crystal and polycrystalline diamond. In addition, the layer of diamond material can be any thickness that acts to help heat transfer from the circuit. In a particular aspect, however, the layer of diamond material can have a thickness of from about 0.1 to about 100.0 microns. In another particular aspect, the diamond layer can have a thickness of from about 1 to about 2 〇 microns. The diamond material layer described herein can be formed on a substrate using any known method. If similar characteristics and results are obtained, although any similar method can be used, the most common vapor deposition methods include Chemical vapor deposition (CVD) and physical vapor deposition (PVD). In one aspect, the cVD method can use, for example, hot filament vapor deposition (fMament CVD), microwave plasma vapor deposition, acetylacetylene vapor deposition (oxyacetylene f丨ame), radio frequency chemical gas. Phase deposition method ("f cvD", laser chemical vapor deposition (|aser CVD, LCVD), metal organic chemical gas 18 201027680 phase deposition method (^1613卜0"9311丨0〇\/0,1\/ 10〇\/0), laser stripping method (丨356 “ablation”, conformal diamond coating processes, and direct current arc techniques. General CVD method uses gas reactants To deposit the diamond or diamond-like carbon into a layered or membranous structure, these gases typically include a small amount (ie less than about 5 Å / 〇) of carbide material, such as methane, diluted with hydrogen. Various specific CVD processes (including Instruments and conditions, as well as CVD processes for boron nitride layers, are well known to those of ordinary skill in the art. In another aspect, PVD techniques such as sputtering, thermal evaporation physical vapor deposition can be used. Thermal evapo Ration PVD), ionized metal CVD (IMVD), electron beam PVD (EBPVD), and reactive PVD (reactive PVD) can be used. In addition, it should be noted that specific deposition conditions can be used to adjust the particular type of material to be deposited, such as diamond-like carbon, amorphous diamond or crystalline diamond. In order to further enhance the characteristics of heat transfer, one aspect of the present invention In this sample, the stone material layer can be an isomorphous diamond material layer. The isomorphic diamond material coating technology can provide many advantages over the existing diamond film forming technology, and the isomorphic diamond coating can be implemented in various types. a substrate (including a non-planar substrate), a growth surface capable of being pretreated to form a carbon film under conditions of unbiased growth conditions, which may be conditions for both CVD deposited diamonds without biasing, The result is that a thin carbon film 'which is typically less than about (10) angstroms (angst_s); can be subjected to this pre-treatment step at substantially any growth temperature, for example, although less than about 500 ° C, "lower temperature is preferred, But from about 2〇〇 <^ to about _ °C can be used. Without any combination of any theory, the thin carbon film appears 19 201027680 when formed in a short period of time, such as less than one hour and hydrogen terminated amorphous carbon. After this pretreatment, the thin carbon film forms a layer of isomorphic diamond material under the conditions of diamond growth. Diamond growth conditions are those commonly used in the growth of conventional CVD diamonds. However, unlike the growth of existing diamond films, diamond films in the form of isomorphic diamond films are produced after the previous pretreatment steps have been used. The diamond film typically begins to grow on a substantially unitary substrate with substantially no incubation time. In addition to this, a continuous film (e.g., substantially 瘳 no grain boundary) can develop in growth within about 80 nm. After depositing the layer of diamond material on the support substrate, a circuit can be deposited thereon. It should be understood that various methods of depositing various layers of the circuit on the diamond material layer are possible, particularly considering various deposited circuits and Circuit elements, therefore, any technique for such deposition is considered in the context of the present invention and the following description is not to be considered as limiting. In one aspect, the circuit can be deposited on the diamond material layer by applying an uncured conductive paste on the diamond material to represent the desired pattern of the circuit, and the conductive paste is cured to form a hardened conductive circuit. The uncured conductive paste can be applied by any known method, however, in a particular aspect, the conductive paste can be applied by various screen printing techniques. While any conductive adhesive can be used, specific non-limiting examples can include copper, silver, gum, gum, and combinations thereof. In the process of heating the glue, a conductive circuit can be formed on the layer of diamond material. For example, copper and silver paste can be screen printed on the layer of diamond material between about 1501 and 200 ° C. The temperature hardens for about 30 to about 60 minutes. In another aspect, a conductive metal can be directly deposited on the layer of the stone material by PVD technology (for example, 201027680 is not limited to cathodic arc method, sputtering, electron beam evaporation, etc.), however, many conductive metals cannot Good adhesion to the diamond surface, in which case a buffer layer can be applied to the diamond material ''a plus PVD/child's circuit for adhesion. Although the choice of buffer layer may vary depending on the type of diamond material and conductive metal used, in one aspect, non-limiting examples of buffer layers may include chromium (chr〇m...(7)), ^(titanium) ^(tungsten)^(cobalt)^ (molybdenum)^ group (tantalum), inscription (aluminum), recorded (nicke|), wrong (2) "c〇njum", _ sharp (niobium) and their compositions. The sample material, the diamond material may include money-like carbon, the conductive metal is copper or silver, and the buffer layer may be a road or a singular. In one aspect, the buffer layer may form a carbide layer thereon. The adhesion of conductive materials deposited on the diamond material, such as chromium carbide or titanium carbide, promotes the adhesion of copper or silver conductive metals to a type of carbon-coated layer. For example, a buffer layer can be used. A high energy coating method having a bias greater than about volts (V) is deposited to form a carbide layer between the buffer layer and the diamond material, followed by a bias having greater than about 5 〇v to about 1 〇〇v ® Pressurized low energy coating to thicken the buffer layer to the desired thickness. In some aspects, the diamond material may gradually enter the buffer layer to reduce discontinuous lattice transition changes between the layer structures. For example, when depositing the diamond material layer, depositing atoms of the buffer layer The percentage will slowly increase to provide a gradual transition between the diamond material and the carbide buffer layer. After deposition of the buffer layer, the conductive metal can be deposited on the buffer layer. Related to the LED device. t led has become more important for electronics and illuminators, and it continues to evolve and there is a need for increased power in 21 201027680. This trend of increased power has caused these devices to generate cooling problems. The cooling problem is exacerbated by the generally small size of these devices, and because of the bulky nature of the heat sink with conventional thermal recordings, it has been rendered useless. However, the inventors have discovered that integrating diamond materials into LED packages Even in the case of very high power, sufficient cooling effect is produced, and at this time, the size of the small LED package is maintained. As shown in the fourth figure, an aspect of the present invention may include an LED device having improved heat dissipation characteristics. The Xiao LED device may include a layer of diamond material (3〇) coated on a support substrate (32). And a plurality of circuits (34) disposed on the layer of diamond material (3), a light emitting diode (36) coupled to the layer of diamond material (30) and electrically coupled to the circuit (34) ^ the diamond The material layer (3〇) is therefore configured to accelerate heat away from and away from the LED. This configuration allows D to operate at temperatures that are colder than the LED package without the diamond material layer. Of course, what needs to be understood is the above. The arrangement is only intended to describe the application of the principles of the invention. Many variations and different arrangements can be conceived by those of ordinary skill in the art without departing from the spirit and scope of the invention. The above changes and arrangements. Accordingly, the present invention has been described with respect to the details of the embodiments of the invention and the Changes in style, function, method of operation, assembly and use. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a cross-sectional view of a circuit arrangement in an embodiment of the invention. The second drawing is a cross-sectional view of a circuit arrangement in an embodiment of the invention. 22 201027680 The third drawing is a cross-sectional view of a circuit arrangement in an embodiment of the invention. Figure 4 is a cross-sectional view showing an LED device in an embodiment of the present invention. [Main component symbol description] (12) (30) Diamond material layer (14) (32) Support substrate (16) (18) (34) Circuit (20) Additional diamond material layer (36) Light-emitting diode
23twenty three