TW201025480A - Film deposition apparatus, substrate processing apparatus, film deposition method, and computer readable storage medium for film deposition method - Google Patents
Film deposition apparatus, substrate processing apparatus, film deposition method, and computer readable storage medium for film deposition method Download PDFInfo
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Abstract
Description
201025480 六、發明說明： 【發明所屬之技術領域】 本發明係關於-種藉由實施將至少2種會相互反 應的反應氣體依序供給至基板表面的供給循環來層積 多數層之反應生成物層以形成薄膜的成膜裝置、成膜方 法以及收納有實施該方法之程式的記情體。 【先前技術】 作為半導體製程之成膜方法，已知有—種於真空氣❹ 氛下使得第1反應氣體吸附於作為基板之半導體晶圓 (以下稱作晶圓）表面，然後將供給氣體切換為第2反應 氣體而於晶圓表面上藉由兩反應氣體的相互反應來形 成1層或複數層之原子層或分子層，並藉由例如多數次 地進行該循環來層積該等薄層而於晶圓上進行成膜的 製程。該製程被稱作例如ALD(Atomic Layer Deposition) 或 MLD(Molecular Layer Deposition)等，能對應循環次 數而尚精雄度地進行膜厚控制’同時膜質的面内均勻性❹ 亦良好’而為一種能有效地對應半導體元件之薄膜化的 方法。 作為適用於該成膜方法的範例例舉有使用在閘極 氧化膜的高介電體膜之成膜。舉出一範例，在形成矽氧 化膜(Si02膜）時，可使用例如二(特丁胺基)矽烷（以下稱 作「BTBAS」）氣體等來作為第1反應氣體(原料氣體）， 可使用臭氧氣體等來作為第2反應氣體（氧化氣體）。 4 201025480 内：及 =载種置，有載置台(設置_ 的牧葉式成膜裝置置於真上部之淋氣頭 上的晶圓，並從C夺反應氣體供給至載置台 副生谷底部將未反應之反應氣體及反 物排—方法來實施 述複數種反應惫體私古1石月j ❹ 應生成物而成為:粒二:谷器内相互混合’便會產生反 战為微粒產生的原因，故該裝置在切換反應 二、，必須供給例如非活性氣體等沖洗氣體來進 體置換。該氣體置換需要較長時間，又循環次數有= 冋達例如數百次，故該裝置有著處理時間冗長的問題。 因此，期盼一種能以高產能進行成膜處理的裝置、方法。 基於前述背景來探討關於專利文獻1〜4所記载的 裝置。概略地說明有關該等裝置，於該等裝置之真空容 器内係設置有用以沿圓周方向（迴轉方向）排列載置複數 片晶圓用的载置台、以及面向該載置台而設置在真空容 器上部以將處理氣體供給至晶圓的氣體供給部。該氣體 供給部係對應於載置在載置台上的晶圓而排列設置在 例如圓周方向之複數位置處。 然後，將晶圓载置於載置台並使得真空容器内減壓 至特定之處理壓力，載置台與該複數個氣體供給部係繞 鉛直軸而進行相對旋轉且同時加熱該晶圓，以從各氣體 供給部將複數種氣赠(例如如述第1反應氣體及第2反 應氣體）各別地供飨炱晶圓表面。又，為了抑制真空容 器内的反應氣體之間相互混合，而在供給反應氣體的氣 5 201025480 體供給部之間設置有物理性之分隔壁，抑或藉由非活性 氣體來形成氣幕而於真空容器内劃分出以第1反應氣 體所形成之處理區域與以第2反應氣體所形成的處理 區域。 如前述，雖於共通之真空容器内同時供給有複數種 反應氣體，但因為對各處理區域加以區分以使得該等反 應氣體不會相互混合，故就旋轉中的晶圓觀之，第1反 應氣體及第2反應氣體係透過前述分隔壁或氣幕而交 互地被加以供給，因而能藉由前述方法來進行成膜處 理。因此，無需進行氣體置換而能在短時間内進行成膜 處理，又能減少沖洗氣體等非活性氣體之消耗量（抑或 無需沖洗氣體）等優點。 但是於該裝置中，將複數種反應氣體導入至共通之 真空容器内時，不僅要如前述般地抑制真空容器内反應 氣體之間的相互混合，更必須對真空容器内之反應氣體 的氣流進行嚴密之控制以使得流向晶圓的氣流保持一 定。即，該裝置因係於真空容器内形成複數個處理區 域，故當流向晶圓之氣流產生紊亂，則會改變處理區域 之大小（即晶圓與反應氣體之反應時間），此時，便會影 響到所形成之薄膜的品質。 真空容器内之反應氣體的氣流於晶圓面内抑或晶 圓面之間處產生紊亂而例如未能於晶圓上供給必要量 之反應氣體的情況，則會因反應氣體之吸附量不足而使 得膜厚變薄，抑或例如未能充分進行氧化反應而會有導 201025480 致膜質惡化之虞。又，氣流產生紊亂而使得反應氣體穿 越分隔壁或氣幕並相互混合之情況，則如前述般地會產 生反應生成物而成為微粒產生的原因。因此，必需嚴密 地進 <于δ亥專反應氣體之氣流的控制，但僅依靠前述之八 隔壁或氣幕仍是不充份的，又例如即使處理中氣涂產生 紊亂，亦無法掌握該狀況。 另一方面，前述裝置係將真空容器内部保持於特定 之真空度(壓力）而同時進行晶圓處理，因此需要在控制 真空容器内之真空度的同時，控制該真空容器内之^應 氣體的氣流，因此如前述之氣流的控制便會極為困難。 又，真空容器内之真空度與反應氣體之流量會根據針對 晶圓進行處理之製程條件(recipe)而改變，故必須根據不 同製程條件來進行真空度與反應氣體之氣流的控制，因 此使得該控制更加地困難。但是，前述專利文獻並未針 對關於前述之氣流控制進行任何的探討。 專利文獻5係記載有一種將真空容器内部分離成 右側區域與左側區域，並同時於前述各區域處形成有氣 體之供給口及排氣口，而於該等區域供給有種類相異之 氣體的同時，由各區域將氣體排出的技術。但是，並未 針對關於真空容器内之氣流(即，例如由各排氣口所排 出之氣體的流量）進行任何的探討。因此，排氣通道内 會例如有堆積物之堆積而使得排氣流量隨著時間產生 A化#即使在左右側排氣流量之平衡失序而導致例如單 侧排氣4 ’亦無法掌握前述狀態。又，於複數個排氣通 7 201025480 ，各別，置有排氣泉之情況，有可能會因各#氣泵之狀 悲而使得排氣能力產生個體差異，但亦未針對關於該個 體差異進行探討。 ▲再者，專利文獻6〜8係記载有—種將複數種氣體 父互吸附於目標物(相當於晶圓）以實施原子廣cvd方 ，的裝置’其係使得載置有晶圓之载置’台進行迴轉，並 給原料氣體與沖洗氣體:該装置係在藉 由非活性祕絲錢幕的 遍、 =各別地將原料氣體與沖洗氣體ί出俱與前述專 矛2山5相同’並未針對關於自各排氣通道30a、30b 所排出之氣體的流量進行任何的探討。 雖二已4種在排氣通道安插一可改變開口程 度之閥Η，並藉由該閥n之開口程度來推測出流通於排 氣通道内之排氣氣體流量的方法，但其並非量測該排氣 氣體之實際流量’故例如前述般當排氣泵之排氣能力改 變時，便無法掌握實際之排氣[Technical Field] The present invention relates to a reaction product in which a plurality of layers are laminated by performing a supply cycle in which at least two kinds of reaction gases which react with each other are sequentially supplied to a surface of a substrate. A film forming apparatus for forming a film, a film forming method, and a sensible body in which a program for carrying out the method is stored. [Prior Art] As a film forming method for a semiconductor process, it is known that a first reaction gas is adsorbed on a surface of a semiconductor wafer (hereinafter referred to as a wafer) as a substrate under a vacuum atmosphere, and then the supply gas is switched. Forming an atomic layer or a molecular layer of one or more layers on the surface of the wafer by mutual reaction of two reactive gases for the second reactive gas, and laminating the thin layers by, for example, performing the cycle many times The process of film formation on the wafer. This process is called, for example, ALD (Atomic Layer Deposition) or MLD (Molecular Layer Deposition), and the film thickness control can be performed in accordance with the number of cycles, and the in-plane uniformity of the film quality is also good. A method capable of effectively responding to thinning of a semiconductor element. As an example suitable for the film formation method, a film formed of a high dielectric film used for a gate oxide film is exemplified. For example, when a tantalum oxide film (SiO 2 film) is formed, for example, a bis(tert-butylamino) decane (hereinafter referred to as "BTBAS") gas or the like can be used as the first reaction gas (raw material gas), and it can be used. Ozone gas or the like is used as the second reaction gas (oxidation gas). 4 201025480 Internal: and = load-bearing, there is a mounting table (settings _ the grazing type film forming device is placed on the wafer on the top of the leaching head, and the supply of reactive gas from C to the bottom of the sub-segment of the mounting table will be unreacted The reaction gas and the anti-material discharge-method are used to implement a plurality of kinds of reactions, the corpus callosum, the ancient stone, the 1st stone j ❹, and the product: the grain 2: the cells are mixed with each other, and the anti-war is generated for the particles, so When the device switches the reaction 2, it is necessary to supply a flushing gas such as an inert gas for the body replacement. The gas replacement takes a long time, and the number of cycles is = for example, hundreds of times, so the device has a problem of lengthy processing time. Therefore, an apparatus and method capable of performing film formation processing with high productivity are expected. Based on the above background, the apparatuses described in Patent Documents 1 to 4 will be discussed. The vacuum of the apparatuses will be briefly described. The inside of the container is provided with a mounting table for placing a plurality of wafers in a circumferential direction (rotation direction), and a processing table for placing the processing gas on the upper portion of the vacuum container facing the mounting table a gas supply unit that is supplied to the wafer. The gas supply unit is arranged at a plurality of positions in the circumferential direction in accordance with the wafer placed on the mounting table. Then, the wafer is placed on the mounting table and vacuumed. The inside of the container is depressurized to a specific processing pressure, and the mounting table and the plurality of gas supply units are relatively rotated about the vertical axis and simultaneously heat the wafer to supply a plurality of kinds of gas from the respective gas supply units (for example, as described above) (1) The reaction gas and the second reaction gas are separately supplied to the surface of the wafer. Further, in order to suppress the mixing of the reaction gases in the vacuum container, the gas supply unit 5 201025480 is supplied between the body supply portions. The physical partition wall or the air curtain is formed by the inert gas, and the processing region formed by the first reaction gas and the processing region formed by the second reaction gas are divided in the vacuum container. A plurality of reactive gases are simultaneously supplied into the common vacuum vessel, but since the treatment zones are distinguished so that the reaction gases do not mix with each other, they are rotated. According to the wafer, since the first reaction gas and the second reaction gas system are alternately supplied through the partition wall or the gas curtain, the film formation process can be performed by the above method. Therefore, it is possible to be short without gas replacement. The film formation process can reduce the consumption of inert gas such as flushing gas (or no need to flush the gas), etc. However, in the device, when a plurality of kinds of reaction gases are introduced into a common vacuum container, not only As described above, the mutual mixing between the reaction gases in the vacuum vessel is suppressed, and the flow of the reaction gas in the vacuum vessel must be tightly controlled so that the gas flow to the wafer is kept constant. That is, the device is attached to the vacuum vessel. A plurality of processing regions are formed therein, so that when the airflow to the wafer is disordered, the size of the processing region (i.e., the reaction time between the wafer and the reaction gas) is changed, and at this time, the quality of the formed film is affected. When the flow of the reaction gas in the vacuum vessel is turbulent in the wafer surface or between the wafer faces, for example, if a necessary amount of the reaction gas is not supplied on the wafer, the amount of the reaction gas is insufficient. If the film thickness is thinned, for example, if the oxidation reaction is not sufficiently performed, the film quality of 201025480 may be deteriorated. Further, when the gas flow is disturbed and the reaction gas passes through the partition wall or the air curtain and is mixed with each other, the reaction product is generated as described above and causes the particles to be generated. Therefore, it is necessary to strictly control the flow of the gas in the reaction gas, but it is still insufficient to rely on the above-mentioned eight partition walls or the air curtain, and for example, even if the gas coating is disordered during the treatment, it is impossible to grasp the situation. On the other hand, the above-mentioned apparatus maintains the inside of the vacuum vessel at a specific degree of vacuum (pressure) while performing wafer processing, and therefore it is necessary to control the gas in the vacuum vessel while controlling the degree of vacuum in the vacuum vessel. Airflow, so the control of the airflow as described above can be extremely difficult. Moreover, the degree of vacuum in the vacuum vessel and the flow rate of the reaction gas are changed according to the process conditions for processing the wafer, so the control of the degree of vacuum and the flow of the reaction gas must be performed according to different process conditions, thereby making the Control is more difficult. However, the aforementioned patent documents do not discuss any of the aforementioned airflow control. Patent Document 5 discloses that a vacuum container is separated into a right side region and a left side region, and a gas supply port and an exhaust port are formed in the respective regions, and gas of a different kind is supplied to the regions. At the same time, the technology of discharging gas from various regions. However, no discussion has been made regarding the flow of gas in the vacuum vessel (i.e., the flow rate of the gas discharged from each of the exhaust ports). Therefore, for example, accumulation of deposits in the exhaust passage causes the exhaust gas flow rate to be generated over time. Even if the balance of the left and right side exhaust gas flows is out of order, for example, the single-side exhaust gas 4' cannot grasp the above state. In addition, in the case of a plurality of exhaust passages 7 201025480, each of which has a exhaust spring, there may be an individual difference in the exhaust capability due to the sorrow of the #气泵, but it is not related to the individual difference. Explore. ▲ In addition, Patent Documents 6 to 8 describe a device in which a plurality of gas fathers are adsorbed to each other (corresponding to a wafer) to perform an atomic wide cvd, and the device is mounted on a wafer. Place the 'station to rotate, and give the raw material gas and the flushing gas: the device is used to pass the raw material gas and the flushing gas separately through the inactive secret wire screen, and the above-mentioned special spear 2 mountain 5 The same 'is not discussed in any way regarding the flow rate of the gas discharged from each of the exhaust passages 30a, 30b. Although there are four types of valves in the exhaust passage that can change the degree of opening, and the degree of opening of the valve n is used to infer the flow rate of the exhaust gas flowing through the exhaust passage, it is not a measurement. The actual flow rate of the exhaust gas is such that, for example, when the exhaust capacity of the exhaust pump is changed, the actual exhaust gas cannot be grasped.
Q 專利文獻1:·美國專利公報第6 634,314號。 專利文獻2 ·日本專利特開2001·254181號公報； 圖1及圖2。 專利文獻3 ·日本專利第Μ44664號公報；圖卜 圖2、申請專利範圍第1項。 專利文獻4.日本特開平4_287912號公報。 專利文獻5·美國專利公報第7，153,542號；圖6Α、 201025480 專利文獻6 ·日本專利特開2〇〇7·247〇66號公報； 段落 0023〜0025、〇〇58、圖 12 及圖 18。 專利文獻7.美國專利公開公報第2〇〇7 2187〇ι號。 專利文獻8.美國專利公開公報第2〇〇7 2187〇2號。 【發明内容】 本發明有鑑於魏問題’提供—種能減少分離氣體 ❹ 之使用量的成膜裝置、成膜方法及收納有實施該方法之 程式的的記憶體。其中該成膜裝置係於真空容器内將會 相互反應的複數種反應氣體依序供給至基板表面而層 積多數層之反應生成物層以形成薄膜，而供給至分離區 域的分離氣體係用以分離沿著載置有基板之迴轉台的 圓周方向所设置之供給有第！反應氣體的第丨處理區域 的氣氛以及供給有第2反應氣體的第2處理區域的氣 氛。 ❹ 本發明弟1樣態之成膜装置，係於真空容器内將至 少2種會相互反應之反應氣體依序供給至基板表面，並 藉由實施如此之供給循環來層積多數的反應生成物層 以形成一薄膜，其具備有·· 迴轉台，係設置於該真空容器内並包含有載置基板 用的基板載置區域； 第1反應氣體供給機構，係朝向該迴轉台之基板載 置區域側之一面供給第1反應氣體； 第2反應氣體供給機構，係遠離該第丨反應氣體供 9 201025480 給機構而設置在該迴轉台之圓周方向並朝向該迴轉台 之基板載置區域側之一面供給第2反應氣體； 分離區域，係位於該圓周方向中供給有第1反應氣 體的第1處理區域與供給有第2反應氣體的第2處理區 域之間； 第1排氣通道，係於該第1處理區域與該分離區域 之間具有排氣口； 第2排氣通道，係於該第2處理區域與該分離區域 之間具有排氣口； 第1真空排氣機構，係透過第1閥門而連接至該第 1排氣通道； 第2真空排氣機構，係透過第2閥門而連接至該第 2排氣通道； 第1壓力檢測機構，係安插於該第1閥門與該第1 真空排氣機構之間； 第2壓力檢測機構，係安插於該第2閥門與該第2 真空排氣機構之間； 處理壓力檢測機構，係至少設置於該第1閥門及該 第2閥門中任一者處；以及 控制部，係根據該第1壓力檢測機構及該第2壓力 檢測機構所檢出之各壓力檢測值來輸出控制該第1閥 門及該第2閥門之開口程度的控制訊號，使得該真空容 器内之壓力以及各自流通於該第1排氣通道和該第2排 氣通道之氣體流量比能達到各自所設定之設定值。 201025480 本發明第2樣態之成膜裝置，係於真空容器内將至 少2種會相互反應之反應氣體依序供給至基板表面，並 藉由實施如此之供給循環來層積多數的反應生成物層 以形成一薄膜，其具備有： 迴轉台’係設置於該真空容器内並包含有载置基板 用的基板載置區域； 〇Q Patent Document 1: US Patent Publication No. 6 634,314. Patent Document 2: Japanese Laid-Open Patent Publication No. 2001-254181; FIG. 1 and FIG. Patent Document 3: Japanese Patent No. 44664; Fig. 2, Patent Application No. 1. Patent Document 4. Japanese Laid-Open Patent Publication No. Hei-4-287912. Patent Document 5: U.S. Patent No. 7,153,542; Fig. 6A, 201025480 Patent Document 6; Japanese Patent Laid-Open Publication No. Hei. No. 2, No. 247-66; paragraphs 0023 to 0025, 〇〇58, FIG. 12 and FIG. . Patent Document 7. U.S. Patent Publication No. 2,7,187,187. Patent Document 8. U.S. Patent Publication No. 2,7,187,2. SUMMARY OF THE INVENTION The present invention has been made in view of the problem of the invention, a film forming apparatus capable of reducing the amount of separation gas 使用 used, a film forming method, and a memory containing a program for carrying out the method. The film forming apparatus is configured to sequentially supply a plurality of reaction gases which are mutually reacted in a vacuum vessel to the surface of the substrate to laminate a plurality of layers of the reaction product layer to form a film, and the separation gas system supplied to the separation region is used for the separation gas system. Separating the supply provided along the circumferential direction of the turntable on which the substrate is placed has the first! The atmosphere of the second treatment region of the reaction gas and the atmosphere of the second treatment region to which the second reaction gas is supplied.成 The film forming apparatus of the present invention is configured to sequentially supply at least two reaction gases that react with each other to the surface of the substrate in a vacuum vessel, and to laminate a plurality of reaction products by performing such a supply cycle. The layer is formed with a film, and the turntable is provided in the vacuum container and includes a substrate mounting region for mounting the substrate; and the first reaction gas supply mechanism is placed on the substrate of the turntable. The first reaction gas is supplied to one side of the region side, and the second reaction gas supply means is provided in the circumferential direction of the turntable and away from the substrate mounting region side of the turntable from the second reaction gas supply 9 201025480 The second reaction gas is supplied; the separation region is located between the first processing region in which the first reaction gas is supplied in the circumferential direction and the second processing region in which the second reaction gas is supplied; and the first exhaust passage is connected to An exhaust port is provided between the first processing region and the separation region; and the second exhaust passage has an exhaust port between the second processing region and the separation region; the first vacuum exhaust The second vacuum exhausting mechanism is connected to the second exhaust passage through the second valve; the first pressure detecting mechanism is inserted in the first exhaust passage a valve is interposed between the second vacuum exhausting mechanism; a second pressure detecting mechanism is interposed between the second valve and the second vacuum exhausting mechanism; and a processing pressure detecting mechanism is provided at least in the first valve And the control unit is configured to output and control the first valve and the second valve based on the respective pressure detection values detected by the first pressure detecting mechanism and the second pressure detecting mechanism The opening degree control signal is such that the pressure in the vacuum vessel and the gas flow ratios respectively flowing through the first exhaust passage and the second exhaust passage can reach respective set values. 201025480 A film forming apparatus according to a second aspect of the present invention is characterized in that at least two kinds of reaction gases which are mutually reacted are sequentially supplied to a surface of a substrate in a vacuum vessel, and a plurality of reaction products are stacked by performing such a supply cycle. The layer is formed to form a film, and the turret is provided in the vacuum container and includes a substrate mounting region for mounting the substrate;
第1反應氣體供給機構，係朝向該迴轉台之基板载 置區域側之一面供給第1反應氣體； 第2反應氣體供給機構，係遠離該第丨反應氣體供 給機構而δ又置在5亥迴轉台之圓周方向並朝向該迴轉台 之基板載置區域側之一面供給第2反應氣體； 分離區域，係位於該圓周方向中供給有第丨反應氣 體的第1處理區域與供給有第2反應氣體的第2處理區 域之間； °° 1處理區域與該分離區域 第1排氣通道，係於該第 之間具有排氣口；The first reaction gas supply means supplies the first reaction gas toward one side of the substrate mounting region side of the turntable; the second reaction gas supply means is separated from the second reaction gas supply means and the δ is set at 5 rpm. The second reaction gas is supplied to one side of the substrate mounting region side of the turntable in the circumferential direction of the stage; the separation region is a first processing region in which the second reaction gas is supplied in the circumferential direction and the second reaction gas is supplied Between the second processing regions; the °° processing region and the first region of the separation region, having an exhaust port between the first;
第2排氣通道，係於該第2處理區域與該分離區 之間具有排氣口； °° S 第1真空排氣機構，係透過第丨閥門而連接至該 1排氣通道； 第 第2真空排氣機構’係透過第2閥門而連接 2排氣通道； ~ 第1處理壓力檢測機構，係設置於該第丨閥門與嗲 第1處理區域之間； ~ 11 ψ 201025480 第2處理壓力檢測機構，係設置於該第2閥門與該 第2處理區域之間；以及 控制部，係根據該第1處理壓力檢測機構及該第2 處理壓力檢測機構所檢出之各壓力檢測值來輸出控制 該第1閥門及該第2閥門之開口程度的控制訊號，使得 該真空容器内之壓力以及該第1處理區域和該第2處理 區域之間的壓力差能達到各自所設定之設定值。 本發明第3樣態之成膜方法，係於真空容器内將至 少2種會相互反應之反應氣體依序供給至基板表面，並 藉由實施如此之供給循環來層積多數的反應生成物層 以形成一薄膜，其具備有： 將基板幾乎水平地載置於該真空容器内之迴轉台 的製程； 旋轉該迴轉台的製程； 自該第1反應氣體供給機構，朝向該迴轉台之基板 載置區域侧之面，將第1反應氣體供給至第1處理區域 的製程； 自遠離該迴轉台之圓周方向所設置的該第2反應 氣體供給機構，朝向該迴轉台之基板載置區域側之面， 將第2反應氣體供給至第2處理區域的製程； 藉由位於該第1反應氣體供給機構及該第2反應氣 體供給機構之間的分離區域所設置的分離氣體供給機 構來供給分離氣體的製程； 藉由於該第1處理區域與該分離區域之間具有排 12 201025480 氣口的第1排氣通道來將該第1處理區域的該第1反應 氣體從第1真空排氣機構處排出，並藉由於該第2處理 區域與該分離區域之間具有排氣口的第2排氣通道來 將該第2處理區域的該第2反應氣體從第2真空排氣機 構處排出的製程； 檢測該真空容器内之壓力、安插於該第1排氣通道 之第1閥門和該第1真空排氣機構之間的第1壓力以及 安插於該第2排氣通道之第2閥門和該第2真空排氣機 構之間的第2壓力之製程；以及 根據該檢測製程所檢出之各壓力檢測值來調整該 第1閥門及該第2閥門之開口程度以使得該真空容器内 之壓力以及各自流通於該第1排氣通道與該第2排氣通 道之氣體流量比能達到各自所設定之設定值的製程。 本發明第4樣態之成膜方法，係於真空容器内將至 少2種會相互反應之反應氣體依序供給至基板表面，並 藉由實施如此之供給循環來層積多數的反應生成物層 以形成一薄膜，其具備有： 將基板幾乎水平地載置於該真空容器内之迴轉台 的製程； 旋轉該迴轉台的製程； 自該第1反應氣體供給機構，朝向該迴轉台之基板 載置區域側之面，將第1反應氣體供給至第1處理區域 的製程； 自遠離該迴轉台之圓周方向所設置的該第2反應 13 201025480 氣體供給機構，朝向該迴轉台之基板載置區域側之面， 將第2反應氣體供給至第2處理區域的製程； 藉由位於該第1反應氣體供給機構及該第2反應氣 體供給機構之間的分離區域所設置的分離氣體供給機 構來供給分離氣體的製程； 藉由於該第1處理區域與該分離區域之間具有排 氣口的第1排氣通道來將該第1處理區域的該第1反應 氣體從第1真空排氣機構處排出，並藉由於該第2處理 區域與該分離區域之間具有排氣口的第2排氣通道來 將該第2處理區域的該第2反應氣體從第2真空排氣機 構處排出的製程； 檢測安插於該第1排氣通道之第1閥門和該第1處 理區域之間的第1壓力以及安插於該第2排氣通道之第 2閥門和該第2處理區域之間的第2壓力之檢測製程； 以及 根據該檢測製程所檢出之各壓力檢測值來調整該 第1閥門及該第2閥門之開口程度以使得該真空容器内 之壓力以及該第1處理區域和該第2處理區域之間的壓 力差能達到各自所設定之設定值的製程。 本發明第5樣態之成膜裝置，係於真空容器内將至 少2種會相互反應之反應氣體依序供給至基板表面，並 藉由實施如此之供給循環來層積多數的反應生成物層 以形成一薄膜，其具備有： 迴轉台，係設置於該真空容器内並包含有載置基板 14 201025480 用的基板載置區域； 第1反應氣體供給機構，係朝向該迴轉台之基板載 置區域側之一面供給第1反應氣體之結構； 第2反應氣體供給機構，係遠離該第1反應氣體供 給機構而設置在該迴轉台之圓周方向並朝向該迴轉台 之基板載置區域側之一面供給第2反應氣體之結構；The second exhaust passage has an exhaust port between the second processing region and the separation region; °° S the first vacuum exhausting mechanism is connected to the first exhaust passage through the second valve; 2 The vacuum exhaust mechanism is connected to the second exhaust passage through the second valve; ~ the first processing pressure detecting mechanism is disposed between the first valve and the first processing region; ~ 11 ψ 201025480 second processing pressure The detecting means is provided between the second valve and the second processing region; and the control unit outputs the pressure detection value detected by the first processing pressure detecting means and the second processing pressure detecting means. A control signal for controlling the degree of opening of the first valve and the second valve is such that the pressure in the vacuum container and the pressure difference between the first processing region and the second processing region can reach respective set values. According to a third aspect of the present invention, in the vacuum container, at least two types of reaction gases which are mutually reacted are sequentially supplied to the surface of the substrate, and a plurality of reaction product layers are laminated by performing such a supply cycle. Forming a film comprising: a process of placing a substrate substantially horizontally on a turntable in the vacuum container; a process of rotating the turntable; and a substrate carrying the first reactive gas supply mechanism toward the turntable a process of supplying the first reaction gas to the first processing region on the surface on the side of the region; and the second reaction gas supply mechanism provided in the circumferential direction away from the turntable toward the substrate mounting region side of the turntable a process of supplying the second reaction gas to the second processing region; and supplying the separation gas by a separation gas supply mechanism provided in the separation region between the first reaction gas supply mechanism and the second reaction gas supply mechanism The first process of the first processing region by the first exhaust passage having the row 12 201025480 port between the first processing region and the separation region The gas is discharged from the first vacuum exhaust mechanism, and the second reaction gas in the second processing region is removed from the second exhaust passage having an exhaust port between the second processing region and the separation region. a process of discharging the vacuum evacuation mechanism; detecting a pressure in the vacuum container, a first pressure interposed between the first valve of the first exhaust passage and the first vacuum exhaust mechanism, and being inserted in the second a second pressure process between the second valve of the exhaust passage and the second vacuum exhaust mechanism; and adjusting the opening of the first valve and the second valve according to the respective pressure detection values detected by the detection process The process is such that the pressure in the vacuum vessel and the gas flow ratio of each of the first exhaust passage and the second exhaust passage can reach the set value set by each. According to a fourth aspect of the present invention, in the vacuum container, at least two kinds of reaction gases which are mutually reacted are sequentially supplied to the surface of the substrate, and a plurality of reaction product layers are laminated by performing such a supply cycle. Forming a film comprising: a process of placing a substrate substantially horizontally on a turntable in the vacuum container; a process of rotating the turntable; and a substrate carrying the first reactive gas supply mechanism toward the turntable a process of supplying the first reaction gas to the first processing region on the surface of the region side; the second reaction 13 201025480 gas supply mechanism provided away from the circumferential direction of the turntable, and a substrate mounting region facing the turntable a side surface, a process of supplying the second reaction gas to the second processing region; and a supply of the separation gas supply mechanism provided in the separation region between the first reaction gas supply mechanism and the second reaction gas supply mechanism a process for separating the gas; the first reverse of the first processing region by the first exhaust passage having an exhaust port between the first processing region and the separation region The gas is discharged from the first vacuum exhaust mechanism, and the second reaction gas in the second processing region is removed from the second exhaust passage having an exhaust port between the second processing region and the separation region. a process of discharging the vacuum exhaust mechanism; detecting a first pressure interposed between the first valve of the first exhaust passage and the first processing region; and a second valve inserted in the second exhaust passage and the second valve a second pressure detecting process between the second processing regions; and adjusting the opening degree of the first valve and the second valve according to the respective pressure detection values detected by the detecting process to cause the pressure in the vacuum container and The pressure difference between the first processing region and the second processing region can reach a process of setting the respective values. According to a fifth aspect of the present invention, in a film forming apparatus, at least two types of reaction gases which are mutually reacted are sequentially supplied to a surface of a substrate in a vacuum vessel, and a plurality of reaction product layers are laminated by performing such a supply cycle. A film is formed, and the turntable is provided in the vacuum container and includes a substrate mounting region for mounting the substrate 14 201025480. The first reactive gas supply mechanism is placed on the substrate of the turntable. a structure in which the first reaction gas is supplied to one side of the region side; and the second reaction gas supply means is disposed in a circumferential direction of the turntable from the first reaction gas supply means and faces one side of the substrate mounting region side of the turntable a structure for supplying a second reaction gas;
分離區域，係位於該圓周方向中供給有第1反應氣 體的第1處理區域與供給有第2反應氣體的第2處理區 域之間； 頂面，係與該迴轉台之間形成有位於該分離氣體供 給機構之該迴轉方向兩側處的狭窄空間，以使得該分離 氣體自該分離區域流向處理區域側； 中心部區域，係位於該真空容器内之中心部，並形 成有將分離氣體喷出至該迴轉台之該基板載置面側的 喷出孔； 第1排氣通道，係於該第1處理區域與該分離區域 之間具有排氣口； 第2排氣通道，係於該第2處理區域與該分離區域 之間具有排氣口； 第1真空排氣機構，係連接至該第1排氣通道；以 及 第2真空排氣機構，係連接至該第2排氣通道。 本發明第6樣態之成膜方法，係於真空容器内將至 少2種會相互反應之反應氣體依序供給至基板表面，並 15 201025480 藉由實施如此之供給循環來層積多數的反應生成物層 以形成一薄膜，其具備有： 將基板幾乎水平地載置於該真空容器内之迴轉台 的製程； 旋轉該迴轉台的製程； 朝向該迴轉台之基板載置區域侧之面，而自該第1 反應氣體供給機構將第1反應氣體供給至第1處理區域 的製程； 朝向該迴轉台之基板載置區域侧之面，而自遠離該 ® 迴轉台之圓周方向所設置的該第2反應氣體供給機構 將第2反應氣體供給至第2處理區域的製程； 藉由位於該第1反應氣體供給機構及該第2反應氣 體供給機構之間的分離區域所設置的分離氣體供給機 構來供給分離氣體，以使得該分離氣體擴散至該分離氣 體供給機構迴轉方向兩側處之面向該迴轉台的該頂面 與該迴轉台之間的狹窄空間之製程； 自位於該真空容器内中心部之中心部區域所形成 ❹ 的喷出口，將該分離氣體喷出至該迴轉台之基板載置面 側的製程； 藉由於該第1處理區域與該分離區域之間具有排 氣口的第1排氣通道來將該第1處理區域的該第1反應 氣體從第1真空排氣機構處排出，並藉由於該第2處理 區域與該分離區域之間具有排氣口的第2排氣通道來 將該第2處理區域的該第2反應氣體從第2真空排氣機 16 201025480 構處排出的製程；以及 從連接至該第1排氣通道的第1真空排氣機構處將 該分離氣體與該第1反應氣體排出，並從連接至該第2 排氣通道的第2真空排氣機構處將該分離氣體與該第2 反應氣體排出的製程。 【實施方式】 依以下實施形態，沿著迴轉台之迴轉方向而於共通 ® 之真空容器内形成有會相互反應之複數個反應氣體的 處理區域’並藉由迴轉台來讓基板依序通過該等複數個 處理區域内部以層積多數的反應生成物層而形成薄膜 時’在處理區域之間介設有供給分離氣體的分離區域， 並於排氣口所在位置處設置有第1排氣通道及第2排氣 通道來將各相異之反應氣體分離而進行排氣。然後，當 真空容器内之壓力達到設定值，再調整安插於各排氣通 道之閥門的開口程度以使得從各排氣通道所排出之氣 © 體的流量比、抑或各處理區域之間的壓力差能達到設定 值。因此，於分離區域之兩侧能穩定地形成適當之氣 流，因為能讓基板表面之反應氣體的氣流穩定化，故可 於晶圓面内抑或晶圓面之間處獲得膜質均勻（膜厚均勻） 且優良之薄膜。又，可防止分離區域兩侧之排氣不均 勻，因此能避免該會相互反應的反應氣體穿過分離區域 而相互混合，藉以抑制基板表面以外處之反應生成物產 生，故可抑制微粒之發生。 17 201025480 (第1實施形態） 本發明第1實施形態之成膜裝置係具備有如圖 1(圖3中Ι-Γ線的剖面圖）〜圖3所示般俯視形狀概略為 圓形的扁爭真空容器1、以及設置於該真空容器1内且 其迴轉中心位於該真空容器1之中心處的迴轉台2。真 空容器1之頂板11係可從容器本體12裝卸的結構。藉 由使真空容器1内部減壓，該頂板11能透過呈環狀設 置於容器本體12之上方面周緣部的密封組件(例如〇型 環13)而朝容器本體12側擠壓以維持氣密狀態，而欲自 容器本體12處分離時，則藉由圖中未顯示之驅動機構 以朝上方抬起。 迴轉台2係以中心部而被固定於圓筒形狀的軸心 部21上’該軸心部21則被固定在朝鉛直方向延伸之姆 轉轴22的上端部。迴轉軸22係貫穿真空容器1之底面 部14 ’且其下端係安裝在能使該迴轉軸22繞鉛直軸旋 轉(本範例係順時鐘旋轉）的驅動部23處。迴轉軸22及 驅動部23係被收納在上方面具有開口的筒狀殼體扣 ^二，趣體20之上方面所設置的法蘭部分係氣密地安 容器1之底面部14的下方面，以使得殼體20 之円邛虱氖與外部氣氛係維持氣密狀態。 沿迴2之表面部Γ置有能如圖2及圖3所示般地 體晶圓；以下鑪施「曰阓）月）基板（+導 下稱作日日圓」）w的圓形凹部24。另外， 201025480 為了方便，圖3中僅於1個凹部24處繪有晶圓W。此 處之圖4係沿同心圓將迴轉台2切斷後橫向展開的展開 圖，如圖4A所示，凹部24之直徑係較晶圓W之直徑 稍大(例如4mm)，又，其深度係設定為等同於晶圓W 之厚度的大小尺寸。因此當晶圓W置入凹部24後，晶 圓W之表面與迴轉台2之表面（未載置有晶圓W的區域) 便齊高。由於當晶圓W表面與迴轉台2表面之間的高 度差過大會因該段差部分而產生壓力變動，因此就能使 膜厚之面内均勻性達到均勻之觀點，晶圓W表面與迴 轉台2表面之高度齊高者較佳。所謂使得晶圓W表面 與迴轉台2表面之高度齊高係指使其為相同高度抑或 使該兩面之差距在5mm以内，較佳地應根據加工精度 而盡可能地使該兩面之高度差接近於零。凹部24之底 面係形成有貫通孔（圖中未顯示），例如後述之3根昇降 銷16(參考圖8)係貫穿該貫通孔而支撐晶圓W之内面來 讓該晶圓W進行昇降。 凹部24係用以定位晶圓W，使其不會因迴轉台2 之旋轉所產生的離心力而飛出，係相當於本發明之基板 載置區域，但是該基板載置區域（晶圓載置區域)非限定 為凹部，亦可為例如在迴轉台2表面處沿晶圓W之圓 周方向排列有複數個導引晶圓W周緣部的導引組件， 抑或於迴轉台2側設置靜電夾持器等夾持器機構來吸 附晶圓W之情況，而藉由該吸著而載置有晶圓W的區 域即為基板載置區域。 19 201025480 如圖2及圖3所示，真空容器1在各自相對於迴轉 台2之凹部24所通過區域的上方位置處，係沿真空容 器1之圓周方向（迴轉台2之迴轉方向）相互間隔地從中 心部呈放射狀延伸出有第1反應氣體噴嘴31、第2反 應氣體喷嘴32以及2根分離氣體喷嘴41、42。本範例 係以第2反應氣體喷嘴32、分離氣體嘴嘴41、第i反 應氣體喷嘴31及分離氣體喷嘴42之順序繞順時鐘而排 列設置。該等反應氣體喷嘴31、32及分離氣體喷嘴41、 42係安裝在例如真空容器i之侧周壁處，且其根端部❹ 的氣體導入埠31a、32a、41a、42a係貫穿該側壁。 圖式所示之範例中，氣體喷嘴31、32、41、42係 從真空容器1之周壁部導入至真空容器丨内，但亦可係 從後述之環狀突出部5導入的結構。此時，可採用在突 出部5之外周緣面與頂板U之外表面處設置具有開口 的L1導管，於真空谷器1内部之l型導管的一側開口 係連接至氣體喷嘴31(32、41、42)，而於真空容器1外 部之L型導管的另側開口則連接至氣體導入埠❹ 31a(32a、41a、42a)的結構。 如圖3所示，反應氣體喷嘴31係經由介設有閥門 36a及流量調整部37a的氣體供給管31b而連接至儲存 有第1反應氣體(BTBAS氣體；二(特丁胺基)矽烷)的第 1氣體供給源38a。反應氣體喷嘴32係經由介設有閥門 36b及流量調整部37b的氣體供給管32b而連接至儲存 有第2反應氣體(〇3氣體；臭氧）的第2氣體供給源38b。 20 201025480 又’分離氣體喷嘴41係經由介設有閥門36c及流量調 整部37c的氣體供給管41b而連接至儲存有用作分離氣 體及非活性氣體的N2氣體（氮氣）之玫2氣體供給源 38c’分離氣體喷嘴42係經由介設有閥門36d及流量古周 整部37d的氣體供給管42b而連接至該氣體: 38c ° 口 ’、 反應氣體贺嘴31與闊門36a之間的氣體供給管 係經由閥門36e及流量調整部37e連接至前述之N2氣 體供給源38c，如後述般地’調整排氣氣體之流量比時， 可從該反應氣體嘴嘴31將]Si2氣體供給至真空容器1 内。又’同樣地’反應氣體噴嘴32與閥門36b之間的 氣體供給管32b係經由閥門36f及流量調整部37f連接 至N2氣體供給源38c。由該等閥門36a〜36f及流量調 整部37a〜37f來構成氣體供給系統39。 反應氣體喷嘴31、32係沿喷嘴之長度方向以例如 10mm的間隔而排列設置有面向正下方並用以將反應氣 體朝下方側喷出之例如孔徑為0.5mm的喷出孔33。又， 分離氣體喷嘴41、42係沿長度方向以例如10mm左右 的間隔而貫穿設置有面向正下方並用以將分離氣體朝 下方側喷出之例如孔徑為〇.5mm的喷出孔40。反應氣 體喷嘴31、32各自相當於第1反應氣體供給機構及第 2反應氣體供給機構’其下方區域則各自成為用以將 BTBAS氣體吸附於晶圓W上的第1處理區域91以及 用以將〇3氣體吸附於晶圓W上的第2處理區域92。 21 201025480 。刀離氣體噴嘴41、42係用以形成可分離該第1處 理區域91與第2處理區域％的分離區域d，該分離區 域D處的真空容器1之頂板11如圖；2〜圖4A、4B所 示係β又置有俯視形狀呈扇型並朝下方突出的凸狀部4， 且該凸狀。ρ 4係以迴轉台2之迴轉中心為中心，並朝圓 周方向將沿著真空容器1内周緣壁附近所繪出的圓分 割，形成的。分離氣體喷嘴41、42係收納在位於該凸 狀°卩4之該圓周方向中央處朝該圓之半徑方向延伸所 形成的溝部43内。即，自分離氣體喷嘴41(42)之中心❿ 轴至肩凸狀部4之扇型兩邊緣(迴轉台2的迴轉方向上 游側之邊緣以及下游側之邊緣）的距離係設定為相同長 度。 另外’溝部43於本實施形態中係將凸狀部4二等 分而加以形成的，但是於其他實施形態中，例如從溝部 43觀之，亦可形成該凸狀部4於迴轉台2之迴轉方向 上游側係較該迴轉方向下游側更為寬廣之結構的溝部 43。 ❿ 因此，於分離氣體喷嘴41、42之該迴轉方向兩側 係具有例如平坦之低頂面44(第1頂面；即該凸狀部4 之下方面），且於該頂面44之該迴轉方向兩倒係具有較 該頂面44更高的頂面45(第2頂面）。該凸狀部4之功 能係阻止第1反應氣體及第2反應氣體侵入至其與迴轉 台2之間’以形成能阻止該等反應氣體相互混合的狹隨 空間（分離空間）。 22 201025480 即，以分離氣體喷嘴41為 台2之迴轉方向上游侧的〇3氣體之=阻止，自迴轉 自迴轉方向下游侧的BTBAS氣妒〇 又忐阻止來 氣體侵入」係指從分離氣體噴嘴 明阻止 (A氣體)會擴散至第}頂面44與 f出之分離氣體 本範例中係吹出至鄰接於該第丨 σ 2表面之間’ 之下方側空間’藉以使得氣體 頂面45The separation region is located between the first treatment region to which the first reaction gas is supplied in the circumferential direction and the second treatment region to which the second reaction gas is supplied; and the top surface is formed between the separation table and the rotary table. a narrow space at both sides of the gas supply mechanism in the direction of rotation such that the separation gas flows from the separation region to the treatment region side; the central portion is located at a central portion of the vacuum vessel and is formed to eject the separation gas a discharge hole on the substrate mounting surface side of the turntable; the first exhaust passage has an exhaust port between the first processing region and the separation region; and the second exhaust passage is configured 2: an exhaust port is provided between the processing region and the separation region; a first vacuum exhausting mechanism is connected to the first exhaust passage; and a second vacuum exhausting mechanism is connected to the second exhaust passage. In the film forming method of the sixth aspect of the present invention, at least two types of reaction gases which are mutually reacted are sequentially supplied to the surface of the substrate in a vacuum vessel, and 15 201025480 is formed by laminating a plurality of reactions by performing such a supply cycle. The material layer is formed to form a film, comprising: a process of placing the substrate on the turntable in the vacuum container; the process of rotating the turntable; facing the side of the substrate mounting area of the turntable, and The first reaction gas supply means supplies the first reaction gas to the first processing region; the surface facing the substrate mounting region side of the turntable, and the first portion disposed away from the circumferential direction of the ® turntable (2) a process in which the reaction gas supply means supplies the second reaction gas to the second processing region; and the separation gas supply means provided in the separation region between the first reaction gas supply means and the second reaction gas supply means Supplying a separation gas such that the separation gas diffuses to the top surface facing the turntable at both sides in the direction of rotation of the separation gas supply mechanism and the turntable a process for narrow space between the two; a process for ejecting the separation gas to the substrate mounting surface side of the turntable from a discharge port formed in a central portion of the central portion of the vacuum container; a first exhaust passage having an exhaust port between the processing region and the separation region, the first reaction gas in the first processing region is discharged from the first vacuum exhausting mechanism, and the second processing region is a second exhaust passage having an exhaust port between the separation regions to discharge the second reaction gas in the second treatment region from the second vacuum exhauster 16 201025480; and from the connection to the first Disposing the separation gas and the first reaction gas at a first vacuum exhaust mechanism of the exhaust passage, and separating the separation gas from the second reaction from a second vacuum exhaust mechanism connected to the second exhaust passage The process of gas discharge. [Embodiment] According to the following embodiment, a processing region of a plurality of reaction gases that react with each other is formed in a vacuum container of a common® along a rotation direction of the turntable, and the substrate is sequentially passed through the turntable. When a film is formed by laminating a plurality of reaction product layers in a plurality of processing regions, a separation region for supplying separation gas is disposed between the processing regions, and a first exhaust passage is provided at a position of the exhaust port. And the second exhaust passage separates the respective reaction gases and exhausts them. Then, when the pressure in the vacuum vessel reaches a set value, the degree of opening of the valve inserted in each of the exhaust passages is adjusted so that the flow ratio of the gas discharged from each exhaust passage or the pressure between the respective treatment regions The difference can reach the set value. Therefore, an appropriate gas flow can be stably formed on both sides of the separation region, since the gas flow of the reaction gas on the surface of the substrate can be stabilized, and the film quality can be uniform in the wafer surface or between the wafer faces (the film thickness is uniform). ) and excellent film. Further, it is possible to prevent the exhaust gas from being uneven on both sides of the separation region, thereby preventing the reaction gases which are mutually reactive from passing through the separation region and mixing with each other, thereby suppressing the generation of reaction products other than the surface of the substrate, thereby suppressing the occurrence of particles. . 17 201025480 (first embodiment) The film forming apparatus according to the first embodiment of the present invention includes a flat shape in which the shape of the plan view is as shown in Fig. 1 (the cross-sectional view of the Ι-Γ line in Fig. 3) A vacuum vessel 1 and a turntable 2 disposed in the vacuum vessel 1 and having a center of rotation at the center of the vacuum vessel 1 are disposed. The top plate 11 of the vacuum container 1 is a structure that can be detached from the container body 12. By decompressing the inside of the vacuum vessel 1, the top plate 11 can be pressed toward the container body 12 side through a sealing member (for example, a 〇-shaped ring 13) which is annularly provided on the periphery of the container body 12 to maintain airtightness. The state, when to be separated from the container body 12, is lifted upward by a drive mechanism not shown. The turntable 2 is fixed to the cylindrical axial portion 21 by a central portion. The axial portion 21 is fixed to the upper end portion of the axial shaft 22 extending in the vertical direction. The rotary shaft 22 extends through the bottom surface portion 14' of the vacuum vessel 1, and its lower end is attached to a drive portion 23 that can rotate the rotary shaft 22 about a vertical axis (this example is clockwise). The rotary shaft 22 and the drive unit 23 are housed in a tubular casing buckle having an opening in the upper direction, and the flange portion provided on the upper side of the fun body 20 is airtightly sealed to the lower surface portion 14 of the container 1 . In order to maintain the airtight state between the casing 20 and the external atmosphere. A circular recess 24 can be placed along the surface of the back surface 2 as shown in FIG. 2 and FIG. 3; the lower surface of the substrate (hereinafter referred to as "day yen") w) . In addition, 201025480 For the sake of convenience, the wafer W is drawn in only one recess 24 in FIG. 4 is a development view in which the turntable 2 is cut along the concentric circle and then expanded laterally. As shown in FIG. 4A, the diameter of the recess 24 is slightly larger than the diameter of the wafer W (for example, 4 mm), and the depth is further The size is set to be equal to the thickness of the wafer W. Therefore, when the wafer W is placed in the concave portion 24, the surface of the wafer W and the surface of the turntable 2 (the region where the wafer W is not placed) are aligned. Since the difference in height between the surface of the wafer W and the surface of the turntable 2 is excessive due to the pressure variation of the step portion, the uniformity of the in-plane thickness of the film can be made uniform, and the surface of the wafer W and the turntable 2 The height of the surface is preferably high. The height of the surface of the wafer W and the surface of the turntable 2 is such that the height is equal to or less than 5 mm, and the height difference between the two surfaces should be as close as possible to the processing accuracy. zero. A through hole (not shown) is formed in the bottom surface of the concave portion 24. For example, three lifting pins 16 (refer to Fig. 8) which will be described later are inserted through the through holes to support the inner surface of the wafer W, and the wafer W is lifted and lowered. The concave portion 24 is for positioning the wafer W so as not to fly out due to the centrifugal force generated by the rotation of the turntable 2, and corresponds to the substrate mounting region of the present invention, but the substrate mounting region (wafer mounting region) It is not limited to a concave portion, and may be, for example, a guide assembly in which a plurality of guide wafer W peripheral portions are arranged in the circumferential direction of the wafer W at the surface of the turntable 2, or an electrostatic chuck is disposed on the turntable 2 side. When the holder W mechanism adsorbs the wafer W, the region where the wafer W is placed by the suction is the substrate placement region. 19 201025480 As shown in FIGS. 2 and 3, the vacuum containers 1 are spaced apart from each other in the circumferential direction of the vacuum vessel 1 (the turning direction of the turntable 2) at positions above the regions through which the recesses 24 of the turntable 2 pass. The first reaction gas nozzle 31, the second reaction gas nozzle 32, and the two separation gas nozzles 41 and 42 are radially extended from the center portion. In the present example, the second reaction gas nozzle 32, the separation gas nozzle 41, the i-th reaction gas nozzle 31, and the separation gas nozzle 42 are arranged in a clockwise manner. The reaction gas nozzles 31 and 32 and the separation gas nozzles 41 and 42 are attached to, for example, the side wall of the vacuum container i, and the gas introduction ports 31a, 32a, 41a, and 42a at the root end portion thereof penetrate the side wall. In the example shown in the drawings, the gas nozzles 31, 32, 41, and 42 are introduced into the vacuum vessel from the peripheral wall portion of the vacuum vessel 1, but may be introduced from the annular projecting portion 5 to be described later. At this time, an L1 duct having an opening may be provided at an outer peripheral surface of the protruding portion 5 and an outer surface of the top plate U, and one side opening of the l-type duct inside the vacuum vane 1 is connected to the gas nozzle 31 (32, 41, 42), the other side opening of the L-shaped duct outside the vacuum vessel 1 is connected to the structure of the gas introduction port 31a (32a, 41a, 42a). As shown in FIG. 3, the reaction gas nozzle 31 is connected to a first reaction gas (BTBAS gas; bis(tert-butylamino) decane) via a gas supply pipe 31b through which a valve 36a and a flow rate adjusting portion 37a are interposed. The first gas supply source 38a. The reaction gas nozzle 32 is connected to the second gas supply source 38b storing the second reaction gas (〇3 gas; ozone) via the gas supply pipe 32b through which the valve 36b and the flow rate adjustment unit 37b are interposed. 20 201025480 Further, the 'separation gas nozzle 41 is connected to the gas supply pipe 38b through which the valve 36c and the flow rate adjustment unit 37c are interposed, and is connected to the N2 gas (nitrogen gas) which is used as the separation gas and the inert gas. The separation gas nozzle 42 is connected to the gas via a gas supply pipe 42b through which a valve 36d and a flow ancient portion 37d are interposed: a gas supply pipe between the reaction port 38 and the wide door 36a. The valve 36e and the flow rate adjusting unit 37e are connected to the N2 gas supply source 38c, and when the flow rate ratio of the exhaust gas is adjusted as described later, the Si2 gas can be supplied from the reaction gas nozzle 31 to the vacuum container 1. Inside. Further, the gas supply pipe 32b between the reaction gas nozzle 32 and the valve 36b is connected to the N2 gas supply source 38c via the valve 36f and the flow rate adjusting portion 37f. The gas supply system 39 is constituted by the valves 36a to 36f and the flow rate adjusting portions 37a to 37f. The reaction gas nozzles 31, 32 are arranged, for example, at intervals of 10 mm in the longitudinal direction of the nozzle, and have discharge holes 33, for example, having a diameter of 0.5 mm, which face downward and are used to eject the reaction gas toward the lower side. Further, the separation gas nozzles 41 and 42 are provided with, for example, a discharge hole 40 having a diameter of 〇5 mm, which is disposed directly downward and which is used to discharge the separation gas toward the lower side, at intervals of, for example, about 10 mm in the longitudinal direction. Each of the reaction gas nozzles 31 and 32 corresponds to the first reaction gas supply mechanism and the second reaction gas supply mechanism ′, and the lower region thereof is a first processing region 91 for adsorbing the BTBAS gas on the wafer W and for The 〇3 gas is adsorbed on the second processing region 92 on the wafer W. 21 201025480. The knife-off gas nozzles 41 and 42 are used to form a separation region d that can separate the first processing region 91 from the second processing region, and the top plate 11 of the vacuum vessel 1 at the separation region D is as shown in FIG. 2 to FIG. 4A. The line β shown in FIG. 4B is further provided with a convex portion 4 which is fan-shaped in plan view and protrudes downward, and is convex. The ρ 4 system is formed by dividing a circle drawn along the inner peripheral edge wall of the vacuum vessel 1 around the center of rotation of the turntable 2 and dividing it in the circumferential direction. The separation gas nozzles 41 and 42 are housed in the groove portion 43 formed in the center in the circumferential direction of the convex shape 朝4 in the radial direction of the circle. That is, the distance from the center ❿ axis of the separation gas nozzle 41 (42) to the fan-shaped edge of the shoulder convex portion 4 (the edge on the upstream side in the rotation direction of the turntable 2 and the edge on the downstream side) is set to the same length. Further, in the present embodiment, the groove portion 43 is formed by dividing the convex portion 4 into two equal parts. However, in another embodiment, for example, the convex portion 4 may be formed on the turntable 2 as viewed from the groove portion 43. The upstream side in the turning direction is a groove portion 43 having a wider structure than the downstream side in the turning direction. Therefore, both sides of the separation gas nozzles 41, 42 in the direction of rotation have, for example, a flat low top surface 44 (the first top surface; that is, the lower side of the convex portion 4), and the top surface 44 The two inversions in the direction of rotation have a top surface 45 (second top surface) that is higher than the top surface 44. The function of the convex portion 4 prevents the first reaction gas and the second reaction gas from intruding between it and the turntable 2 to form a narrow space (separation space) capable of preventing the reaction gases from mixing with each other. 22 201025480 In other words, the separation gas nozzle 41 is the 〇3 gas on the upstream side in the rotation direction of the table 2, and the BTBAS gas from the downstream side in the rotation direction prevents the gas from entering. The gas that prevents (A gas) from diffusing to the top surface 44 and the f-out gas is blown out to the space below the 'between the surface of the second 丨 σ 2 ' so that the gas top surface 45
入。然後，所謂「使得氣體無法歧 無法自鄰接空間進人至凸狀部」、'非僅•日其完全 況，亦指或許多少仍會侵人M 下方側空間之情 側侵入之〇3氣體及BTBAS氣體持於各自從兩 万、、曰入的邾能★运 不θ在凸狀部4内部相 互一的狀態之情況’只要能達到前述作用便可發捏： 離區域D之功能’即發揮分離第i處理 ： 與第2處理區域92之氣氛的分離/因此= 空係設定為能確保狹险空丄= ^方工間）與鄰接於該空間之區域(本範例係指第2頂 面^下方空間）間的壓力差可發揮「使得氣體無法侵 入^之用的大小尺寸’其具體尺寸會依凸狀部4之面 積等而有所不同。x，吸附於晶圓w之氣體當然地能 通過該分離區域D㈣，所謂之阻止氣體侵人係指氣相 中的氣體。 本範例中，以直徑300mm的晶圓W作為被處理基 板’則此時凸狀部4在位於距迴轉台 2之迴轉中心 140mm的外周緣側部位(與後述突出部5之邊界部位) 23 201025480 處’其圓周方向之長度(迴韓9 n r-t 兔w 同心圓的圓弧長度) 為例如⑽麵，而在位於晶H w载置區域（凹部 外侧的部位處’其圓周方向之長度為例如502咖。另In. Then, the so-called "making the gas inseparable from the adjoining space into the convex part", "not only the day of the full situation," also refers to the possibility of invading the lower side of the space on the side of the M side of the gas 3 The BTBAS gas is held in a state in which the enthalpy of each of the 20,000 and the enthalpy of the entanglement is in the state of the convex portion 4, as long as the above-mentioned action can be achieved, the function of the zone D can be pinched: Separating the i-th process: the separation from the atmosphere of the second processing region 92/thus = the null system is set to ensure a narrow space = ^ square work) and the region adjacent to the space (this example refers to the second top surface) The pressure difference between the lower space and the space can be used to "the size and size of the gas which cannot be invaded". The specific size varies depending on the area of the convex portion 4. etc. x, the gas adsorbed on the wafer w is of course Through the separation region D (four), the so-called gas intrusion means gas in the gas phase. In this example, the wafer W having a diameter of 300 mm is used as the substrate to be processed, and then the convex portion 4 is located at a distance from the turntable 2 The outer peripheral side of the center of rotation of 140 mm (described later) Boundary part of the exit 5) 23 201025480 'The length of the circumferential direction (return to the Korean 9 n rt rabbit w concentric circle arc length) is, for example, the (10) plane, and is located in the area where the crystal H w is placed (the outside of the recess) The length in the circumferential direction is, for example, 502 coffee.
外，如圖4A戶斤示，於該外侧部位處，各自位在分離氣 體噴嘴4K4取左右兩嫌置處的凸 的長度為L，則長度I^ 246mm。 之N周方A ❹ 又’如圖4A所示’凸狀部4之下方面（即頂面44) :巨迴=2表面之高度h可為例如〇.5mm至10mm，約 4:者較佳。此時，迴轉台2之轉速係設定為例如爪 ::轉===之分離機能’ 等來設定該凸㈣4的大小 頂面44)與迴轉台2表面 方面（第 體不限定於氮氣(n2)而可使外，分離氣 等，但亦不限定於該等氣體而可使^ f性氣體 是不會影響成膜處理的氣體，對於氣‘二2等’只要 限制。又，用於流量 ^體之_並無特別 等非活性氣體，同樣地口^限定㈣述n2氣體 即可。本範例軸二=響ί膜處理的氣體 體，故無需如後述般在_ 77離I體及非活性氣 的切換，但亦可使用===處理時進行非活性氣體 非活性氣體。、氧來作為該等分離氣體及 另一方面’沿該軸心部2 下方面設置有突出部5以卜周緣而於頂板Η之 使其面向該迴轉台2之軸心部 24 201025480 文罪外周緣側的部位。該突出却 轉台2迴轉中心側的部位係f 5與凸狀部4之迴 與凸狀部4下方面(頂面44)=成的，且其下方面係 圖3係從較該頂面45更歓較度。圖2及 部5與凸狀部4並未限定4要，圖U外，突出 之個體。 茺形成一體，亦可為各別 Ο ❹ 製作方法，並非限定為在： 中央處形成溝部43,再於織的#輕板的 嘴41(42)的結構，亦可使用‘ 3内設$分離氣體噴 箄太彳腺+ 片屬型板並错由螺絲鎖固 ==:頂板11下方面之分離氣體噴糊 曰。真工谷器1之頂板u的下方面即從迴轉台2之 =圓載置區域(凹部24)所見之頂面處，如前述般地沿其 固周方命具有P頂面44以及高度較該頂面44更高的 第2頂面45’圖i係設置有較高之頂面45之區域的縱 面，圖5係設置有較低之頂面44之區域的縱剖面。 扇型凸狀部4之周緣部（真空容器丨之外緣側部位）如圖 2及圖5所示地形成有面向迴轉台2之外端面且資曲呈 L型的彎曲部46。扇塑凸狀部4係設置於頂板11側， 且"T攸谷器本體12拆下之結構，因此該彎曲部46之外 周緣面與容器本體12之間具有微小之間隙。與凸狀部 4相同地，該彎曲部46係以預防反應氣體自兩侧侵入 25 201025480 並防止兩反應氣體相互混人太s μ 46的内㈣減、口 為目的而設置的，彎曲部 彎曲二料麵1關隙、以及 的外騎面與容器本體12之__尺寸係 面?迴轉台2表面之頂面44的高度h相同。 之内ft，從迴轉台2之表面侧區域觀之，彎曲部46 之内周緣面係構成了真空容器丨之内周緣壁。In addition, as shown in Fig. 4A, at the outer portion, the length of each of the convex portions of the separation gas nozzle 4K4 is L, and the length is I 246 mm. The N-square A ❹ and 'as shown in Fig. 4A' below the convex portion 4 (i.e., the top surface 44): the height h of the surface of the giant back = 2 can be, for example, 〇.5 mm to 10 mm, about 4: good. At this time, the rotation speed of the turntable 2 is set to, for example, a claw: a rotation function of the rotation ===, etc., to set the top surface 44 of the convex (four) 4 and the surface of the turntable 2 (the first body is not limited to nitrogen (n2) In addition, it is possible to separate the gas and the like, but it is not limited to such a gas, and the gas can be a gas that does not affect the film formation process, and is limited to the gas 'two or the like'. ^There is no special non-reactive gas, and the same can be used to define (4) the n2 gas. The second axis of this example is the gas body treated by the membrane, so it is not necessary to be as follows. Switching of the active gas, but it is also possible to carry out the inert gas inactive gas when the treatment is ===, oxygen as the separation gas, and on the other hand, the protrusion 5 is provided along the lower side of the axial portion 2 The periphery of the top plate is placed so as to face the axial portion 24 of the turntable 2 201025480. The portion on the outer peripheral side of the sin of the turret is the portion of the turn center 2 on the center side of the turntable and the convex portion 4 is convex and convex. The lower part of the part 4 (top surface 44) = the same, and the lower part of the figure 3 is more sturdy than the top surface 45. Figure 2 The portion 5 and the convex portion 4 are not limited to four, and the individual protruding from the outside of the figure U. The 茺 is formed integrally, and may be a separate method for making the , ,, and is not limited to: forming the groove portion 43 at the center, and then weaving #轻板的嘴41 (42) structure, can also use '3 built-in $ separate gas squirting too much parotid gland + sheet type plate and wrongly locked by screws ==: the separation gas in the lower part of the top plate 11 The lower side of the top plate u of the real grain cutter 1 is the top surface of the turntable 2 from the round mounting area (recess 24), and has a P top surface 44 and a height along its solid periphery as described above. The second top surface 45' is higher than the top surface 44. Fig. i is a longitudinal plane provided with a region of the upper top surface 45, and Fig. 5 is a longitudinal section provided with a region of the lower top surface 44. As shown in Fig. 2 and Fig. 5, the peripheral portion of the convex portion 4 (the portion on the outer edge side of the vacuum vessel) is formed with a curved portion 46 that faces the outer end surface of the turntable 2 and is L-shaped. The portion 4 is provided on the top plate 11 side, and the structure of the T-tumbler body 12 is removed. Therefore, there is a slight gap between the outer peripheral surface of the curved portion 46 and the container body 12. Similarly, the convex portion 4 is provided for preventing the reaction gas from intruding from both sides 25 201025480 and preventing the two reaction gases from being mixed with each other for the purpose of internal (four) subtraction and opening, and the curved portion is curved. The gap of the material surface 1 and the outer riding surface are the same as the height h of the top surface 44 of the surface of the turret 2 of the container body 12. The inner ft is viewed from the surface side area of the turntable 2, The inner peripheral surface of the curved portion 46 constitutes the inner peripheral wall of the vacuum vessel.
5所於：T區域D處’容器本體12之内周緣壁係如圖 亩接近至^曲部46之外周緣面而形成一垂 ’但疋於分離區域D以外的部位，如圖i所示從 2面向迴轉台2外端面的部位橫越至底面部14而切 ^縱剖面形狀為矩形之朝外方側凹陷的構造。於該凹 、°位處，連通至前述第1處理區域91及第2處理區 域92的區域係各自稱為第i排氣區域£1及第2排氣區 域E2 ’且§亥等第1排氣區域m及第2排氣區域E2的 底部係如圖1及圖3所示地各自形成有第丨排氣口 61 及第2排氣口 62。5: in the T area D, the inner peripheral wall of the container body 12 is close to the peripheral surface of the curved portion 46 to form a vertical portion but outside the separation region D, as shown in FIG. The portion from the second surface facing the outer end surface of the turntable 2 is traversed to the bottom surface portion 14 and the vertical cross-sectional shape is a structure in which the rectangular shape is recessed toward the outer side. In the concave and ° positions, the regions that communicate with the first processing region 91 and the second processing region 92 are referred to as the i-th exhaust region £1 and the second exhaust region E2′, respectively, and the first row As shown in FIGS. 1 and 3, the gas region m and the bottom portion of the second exhaust region E2 are each formed with a third exhaust port 61 and a second exhaust port 62.
如前述圖1所示，第丨排氣口 61係經由介設有第 1閥門65a的第1排氣通道63a而連接至第1真空排氣 機構(例如真空泵64a)。該第i閥門65a係可改變其開 口程度的例如 APC(Aut0 pressure contr〇ller)等，並為可 對應該閥門65a之開口程度來調整流通於該第丨排氣通 道63a内之氣體流量的結構。位於該第〗閥門65a之上 游側（真空容器1側)與下游側（真空泵64a側）的第1排 氣通道63a係各自介設有由壓力計等所組成的第}處理 26 201025480 壓力檢測機構66a及第1壓力檢測機構67a。第i處理 測機構66a係、用以檢測第！閥門65a上游側之真 内的壓力’第1壓力檢測機構67&則係用以檢 测第1閥門65a與真空泵64a之間的壓力。藉由後述之 控制部8〇’根據該等第！處理壓力檢測機構咖及第i 塵力檢測機構67a所檢測出的壓力檢測值之差(壓差）， 而使用例如伯努利定律等來進行計算，並考量第丨排氣 ❹ 通道咖與第1閥Π祝之壓降損失以計算出流通於該 第1排氧通道63a内（第丨閥門65a)之氣體流量。 *又，關於前述第2排氣口 62亦同樣地係經由介設 有第2閥門65b的第2排氣通道63b而連接至第2真空 排氣機構⑼如衫泵64b)，前述第丨_ .相= 地，該第2閥門65b亦係由APC等所組成，可對應該 閥門=5b之開口程度來調整流通於該第2排氣通道· 内之氣體流量。位於該第2閥門65b之上游側與下游側 ❹ 的第2排氣通道63b係各自介設有由壓力計等所組成的 第2處理壓力檢測機構66b及第2壓力檢測機構仍。 第2處理壓力檢測機構66b及第2壓力檢測機構67b係 各自，以檢測真空容器！内的壓力及第2閥門6北下游 側的壓力。同樣地藉由控制部80 ,根據該等第2處理 壓力檢測機構66b及第2壓力檢測機構67b所檢測出的 壓力之差’以計算出流通於該第2排氣通道63b内（第2 閥門幻b)之氣體流量。以下，方便起見，前述第1閥門 65a及第2閥門65b亦可各自稱作閥門M(master)及閥門 27 201025480 S(sJave)。 晉於述般’以俯視觀之，該等排氣口 6卜62係設As shown in Fig. 1, the third exhaust port 61 is connected to the first vacuum exhaust mechanism (for example, the vacuum pump 64a) via the first exhaust passage 63a through which the first valve 65a is interposed. The i-th valve 65a is, for example, an APC (Aut0 pressure contr〇ller) or the like which can change the degree of opening thereof, and is configured to adjust the flow rate of the gas flowing through the second exhaust passage 63a in accordance with the degree of opening of the valve 65a. . The first exhaust passage 63a located on the upstream side (the vacuum vessel 1 side) and the downstream side (the vacuum pump 64a side) of the first valve 65a is provided with a first processing unit 26 composed of a pressure gauge or the like. 66a and the first pressure detecting mechanism 67a. The i-th processing mechanism 66a is used to detect the first! The pressure in the true side of the upstream side of the valve 65a is the first pressure detecting means 67 & for detecting the pressure between the first valve 65a and the vacuum pump 64a. The control unit 8〇', which will be described later, is based on the first! The difference (pressure difference) between the pressure detection values detected by the pressure detecting means and the i-th dust detecting means 67a is processed, and calculation is performed using, for example, Bernoulli's law, and the third exhaust gas passage and the third are considered. The pressure drop of the valve is calculated to calculate the flow rate of the gas flowing through the first row of oxygen passages 63a (the second valve 65a). In addition, the second exhaust port 62 is similarly connected to the second vacuum exhaust mechanism (9) such as the shirt pump 64b via the second exhaust passage 63b through which the second valve 65b is interposed. Phase = Ground, the second valve 65b is also composed of APC or the like, and the flow rate of the gas flowing through the second exhaust passage can be adjusted corresponding to the degree of opening of the valve = 5b. Each of the second exhaust passages 63b located on the upstream side and the downstream side of the second valve 65b is provided with a second processing pressure detecting means 66b and a second pressure detecting means each composed of a pressure gauge or the like. The second processing pressure detecting means 66b and the second pressure detecting means 67b are each for detecting the vacuum container! The pressure inside and the pressure on the downstream side of the second valve 6 are. Similarly, the control unit 80 calculates the difference in pressure detected by the second processing pressure detecting means 66b and the second pressure detecting means 67b to flow through the second exhaust passage 63b (the second valve). Magic b) gas flow. Hereinafter, for convenience, the first valve 65a and the second valve 65b may be referred to as a valve M (master) and a valve 27 201025480 S (sJave), respectively. In the view of the general view, these exhaust ports are designed.
禮眚^離區域D之迴轉方向兩側’以讓分離區域D 絲作用，詳細說明，從迴轉台2之迴轉中 域Μ 在第1處理區域91以及鄰接於該第1處理區 例如迴轉方向下游側的分離區域D之間處係形 風有第1挑齑Γ7 d 當）金 ；' ’從迴轉台2之迴轉中心觀之，在 ❹ ::理區域92以及鄰接於該第2處理區域92之例如 ^62, ^下游侧的分離區域D之間處則形成有第2排氣 〇 $/、各自專門用來進行各反應氣體(BTBAS氣體及 )之排氣。本範例中，一排氣口 61係設置於第1 方:礼體嘴嘴31與鄰接於該反應氣體喷嘴31之該迴轉 :下游側的分離區域D之第丨反應氣體喷嘴3丨一側 巧的延長線之間處’又，另—排氣口 62則設置於第 應氣體嘴嘴32與鄰接於該反應氣體噴嘴32之該迴 ，方向下游側的分離區域D之第2反應氣體喷嘴32 — 側邊緣的延長線之間處。亦即，第1排氣π 61係設置 於圖3中-點鏈線所示的迴轉台2中心、與第丨處理區域 91所連。通之直線L1、以及迴轉台2中心與鄰接於該第 1處理區域91下游側之分離區域D的上游側邊緣所連 L的直線L2之間處，而第2排氣口 62係設置於圖3 中二點鏈線所示的迴轉台2中心與第2處理區域92所 連通之直線L3、以及迴轉台2中心與鄰接於該第2處 理區域92下游側之分離區域D的上游側邊緣所連通的 28 201025480 直線L4之間處。 另外，前述第1處理壓力檢測機構66a及第2處理 壓力檢測機構66b所測得之壓力係幾乎相同，因此亦可 使用第1處理壓力檢測機構66a及第2處理壓力檢測機 構66b中任一者的壓力檢測值，來作為計算第1排氣通 道63a及第2排氣通道63b中各氣體之流量所使用的閥 門65a、65b之上游側的壓力值。又，閥門65a、65b之 上游側的排氣通道63a、63b之壓力與真空容器1内之 壓力幾乎相等，因此亦可使用於真空容器1内額外設置 的壓力檢測機構之壓力檢測值來代替處理壓力檢測機 構66a、66b之壓力檢測值，以作為計算該氣體流量所 使用的壓力值。 又，排氣口的設置個數不限定為2個，亦可於例如 包含有分離氣體噴嘴42的分離區域D以及鄰接於該分 離區域D之該迴轉方向下游側的第2反應氣體喷嘴32 之間追加設置一排氣口而總共為3個，或亦可為4個以 上。本範例之排氣口 61、62係設置於較迴轉台2更低 位置處，藉以從真空容器1内周緣壁與迴轉台2周緣之 間的間隙處進行排氣，但並非限定要設置在真空容器1 之底面部，亦可設置於真空容器1之側壁。又，將排氣 口 61、62設置於真空容器1之側壁的情況，亦可設置 於較迴轉台2更高位置處。相較於從面向迴轉台2之頂 面處進行排氣之情況，如前述般設置之排氣口 61、62 可使得迴轉台2上的氣體係流向迴轉台2之外緣側，就 29 201025480 可抑制揚起微粒之觀點來看本發明係有利的。 該迴轉台2與真空容器1底面部14之間的空間如 圖1及圖6所示般地設置有作為加熱機構的加熱器單元 7,而可透過迴轉台2來將迴轉台2上之晶圓w加埶至 該製程之製程條件所決定的溫度。於該迴轉台2周緣附 近的下方㈣圍繞加熱H單元7之整體周緣而設置有 遮，，件7卜以將迴轉台2上方空間乃至排氣區域e 的祕與置放有該加熱器單元7的氣氛加以區分。該遮 蔽組件7丨之场係朝相f曲㈣成凸 =青曲面與迴轉台2下方面之間的間隙，以抑制氣體 攸外側侵入至遮蔽組件71内。 加轉t2之下方面的中心部附近，位於較設置有 早707之空間更靠近迴轉中心的底面部14部位 ^接近至軸心部21而於其之間形成狹窄空間，又，關 於貫穿該底面部14之迴轉轴22的+ 與迴轉轴22之_ 貝通孔，其内周緣面 通至’'為乍的且該等狹窄空間係連 體然後，該殼體2〇係設置有將沖洗氣 給至該狹窄空間内以進行沖洗用的沖洗 又’於加熱器單元7之下方側位置處， 具工谷器1之底面部14係於圓周方 ::沖洗加熱器單元7之設置空 ，由設置前述之沖洗氣體供給管LB，如圖7 冲洗乳體之流動箭號所示，以&氣體來沖洗該殼禮 30 201025480 20内乃至加熱器單元7之設置空間為止的空間，該沖 洗氣體係從迴轉台2與遮蔽組件71之間的間隙並經由 排氣區域E而排出至排氣口61、62。藉此可防止BTBAS 氣體或〇3氣體從前述第1處理區域91與第2處理區域 92中任一侧經由迴轉台2下方而流入另一側，因此該 沖洗氣體可達到分離氣體之功用。 又，真空容器1之頂板11的中心部係連接有分離 氣體供給管51，以將分離氣體(N2氣體)供給至頂板11 與軸心部21之間的空間52。供給至該空間52的分離 氣體係經由突出部5與迴轉台2之狹窄間隙50並沿著 迴轉台2之晶圓載置區域一侧的表面而朝周緣處喷 出。由於該突出部5所圍繞的空間充滿了分離氣體，故 可防止反應氣體(BTBAS氣體或03氣體)經由第1處理 區域91與第2處理區域92之間的迴轉台2中心部而相 互混合。亦即，該成膜裝置係具備有由迴轉台2之迴轉 中心部與真空容器1所劃分形成而用以分離第1處理區 域91與第2處理區域92之氣氛的中心部區域C，其中 該中心部區域C係沿該迴轉方向形成有當被分離氣體 沖洗的同時，會將分離氣體喷出至該迴轉台2表面的喷 出口。另外，此處所述之喷出口係相當於該突出部5與 迴轉台2之狹窄間隙50。 再者，如圖2、圖3及圖8所示，真空容器1之側 壁係形成有於外部搬送手臂10與迴轉台2之間進行晶 圓W傳遞用的搬送口 15,該搬送口 15可藉由圖中未顯 31 201025480 示之開閥來進行開閉。又，迴轉台：之晶圓載置區域(凹 部24)係於面向該搬送口 15的位置處與搬送手臂⑺之 間進行晶® W傳遞，因此在迴轉台2 該傳遞位置的部位，設置有貫穿凹部24以從：將 晶圓W抬起的傳遞用昇降们6之昇降機構(圖中未顯 示）° 又，如圖9所示，該成膜裝置具備有由電腦所組成 之用以控制裝置整體之動作的控制部8〇。該控制部 具備有CPU81、記憶體82、處理程式83、記憶體❿ 8 4及計時器8 6。該記憶體8 2係於每個製程條件皆^置 了寫入有自前述第1反應氣體噴嘴31所供給2BTBAS 氣體的流量Va、自第2反應氣體喷嘴32所供給之〇3 氣髏的流量Vb、處理壓力P、自第1排氣通道63\及第3 2排氣通道63b排出之氣體的流量比F(流通於第2排氣 通道63b之氣體流量/流通於第1排氣通道63&之氣體 流量）等處理條件的區域。該氣體之流量比F係使得在 穩定狀態下，於第1處理區域91、第2處理區域92處❹ 所供給至晶圓W的氣流能讓晶圓W面内及面之間達固 定化(穩定化)所設定之數值。具體說明，其所設定之數 值係能讓處理溫度與處理壓力等穩定地維持於製程條 件所對應之數值，又能讓自第1排氣通道63a及第2排 氣通道63b所排出之氣體流量維持在相對於自第丨反廣 氣體喷嘴31及第2反應氣體噴嘴32所供給之氣體(更 詳細說明亦包含作為沖洗氣體所供給之Ν2氣體）的流 32 201025480 量0 處理程式83係記載有將寫入在該記憶體82的製程 條件讀取至工作記憶體84，根據該製程條件將控制訊 號傳送至成膜裝置的各部位，並藉由實施後述各步驟以 進行晶圓W處理的命令。簡要說明使用該處理程式83 所進行的處理，該處理程式83係記載有下述命令：在 供給BTBAS氣體與03氣體之前（進行成膜處理之前）， 將處理溫度設定至例如從製程條件所讀出的設定值；接 著，將處理中所供給之氣體總流量相同流量的N2氣體 供給至真空容器1内，根據第1處理壓力檢測機構 66a(66b)及壓力檢測機構67所得各壓力檢測值來調整 第1閥門65a之開口程度及第2閥門65b之開口程度， 使得此狀態下自第1排氣通道63a及第2排氣通道63b 所排出之氣體的流量比F以及真空容器1内之壓力（真 空度)P能達到其設定值，待供給至晶圓W的氣流穩定 化之後(形成穩定狀態後），供給BTBAS氣體與03氣體 以進行後述的成膜處理。如前述地調整排氣氣體之流量 比F及真空容器1内之壓力P時，進行藉由第1閥門 65a來調整真空容器1内之壓力P的第1步驟，其次進 行藉由第2閥門65b來調整排氣氣體之流量比F的第2 步驟，接著如同再度進行第1步驟般，反覆地藉由該等 閥門65來調整真空容器1内之壓力P及排氣氣體之流 量比F直到經過特定時間（次數)(具體步驟容後詳述）。 另外，雖然本範例係說明了當各製程條件具有相異之排 33 201025480 氣氣體的流量比F之情況，但亦可使各製程條件具有共 通之排氣氣體的流量比F。 、 計時器86係用以設定藉由該處理程式83來調整間 門65的重覆時間（回數），例如該重覆時間可為自動設定 者’抑或例如由作業員來對例如各製程條件各自地設定 其重覆時間。 該處理程式83係可從硬碟、光碟、磁光碟(ΜΟ)， 記憶卡、軟碟等記憶體(記憶部85)安裝至控制部80内。The ceremony is performed on the two sides of the rotation direction of the region D to allow the separation region D to act, and in detail, from the middle of the rotation of the turntable 2, in the first processing region 91 and adjacent to the first processing region, for example, in the direction of the rotation. The wind between the side separation regions D has a first provocation 7 d when gold; ' 'from the center of rotation of the turntable 2, in the ❹ :: area 92 and adjacent to the second processing area 92 For example, a second exhaust gas 〇$/ is formed between the separation regions D on the downstream side, and each of them is exclusively used for exhausting each reaction gas (BTBAS gas and). In the present example, an exhaust port 61 is provided on the first side: the body mouth 31 and the rotation adjacent to the reaction gas nozzle 31: the second reaction gas nozzle 3 of the separation region D on the downstream side Between the extension lines, the other-exhaust port 62 is disposed between the first gas nozzle 32 and the second reaction gas nozzle 32 of the separation region D on the downstream side of the reaction gas nozzle 32. — Between the extensions of the side edges. That is, the first exhaust gas π 61 is provided in the center of the turntable 2 shown by the dotted line in Fig. 3, and is connected to the second processing region 91. The straight line L1 and the center of the turntable 2 are located between the line L2 connected to the upstream side edge of the separation area D on the downstream side of the first processing area 91, and the second exhaust port 62 is provided in the figure. 3 is a straight line L3 that communicates with the center of the turntable 2 and the second processing region 92, and a center of the turntable 2 and an upstream side edge of the separation region D adjacent to the downstream side of the second processing region 92. Connected 28 201025480 between the lines L4. Further, since the pressures measured by the first processing pressure detecting means 66a and the second processing pressure detecting means 66b are almost the same, any of the first processing pressure detecting means 66a and the second processing pressure detecting means 66b may be used. The pressure detection value is used as a pressure value on the upstream side of the valves 65a and 65b used for calculating the flow rates of the respective gases in the first exhaust passage 63a and the second exhaust passage 63b. Further, the pressures of the exhaust passages 63a, 63b on the upstream side of the valves 65a, 65b are almost equal to the pressures in the vacuum vessel 1, and therefore the pressure detection value of the pressure detecting means additionally provided in the vacuum vessel 1 can be used instead of the treatment. The pressure detection values of the pressure detecting mechanisms 66a, 66b are used as pressure values for calculating the gas flow rate. Further, the number of the exhaust ports to be provided is not limited to two, and may be, for example, a separation region D including the separation gas nozzle 42 and a second reaction gas nozzle 32 adjacent to the downstream side of the separation region D in the rotation direction. A total of three exhaust ports are provided, or a total of three or more may be provided. The exhaust ports 61, 62 of the present example are disposed at a lower position than the turntable 2, thereby exhausting from a gap between the inner peripheral wall of the vacuum vessel 1 and the periphery of the turntable 2, but is not limited to being disposed in a vacuum. The bottom surface of the container 1 may be provided on the side wall of the vacuum container 1. Further, the case where the exhaust ports 61, 62 are provided on the side wall of the vacuum vessel 1 may be provided at a higher position than the turntable 2. Compared with the case where the exhaust is performed from the top surface facing the turntable 2, the exhaust ports 61, 62 provided as described above can cause the gas system on the turntable 2 to flow to the outer edge side of the turntable 2, 29 201025480 The present invention is advantageous from the viewpoint of suppressing the lifting of particles. The space between the turntable 2 and the bottom surface portion 14 of the vacuum vessel 1 is provided with a heater unit 7 as a heating means as shown in Figs. 1 and 6, and the crystal on the turntable 2 can be transmitted through the turntable 2. The circle w is twisted to the temperature determined by the process conditions of the process. The lower portion (four) near the periphery of the turntable 2 is provided with a cover around the entire circumference of the heating H unit 7, and the member 7 is placed to hold the space above the turntable 2 and even the exhaust region e with the heater unit 7. The atmosphere is divided. The field of the shielding unit 7 is convex toward the phase f (four) = the gap between the cyan surface and the lower side of the turntable 2 to suppress the intrusion of the outside of the gas crucible into the shielding unit 71. In the vicinity of the center portion of the lower side of the rotation t2, the bottom portion 14 located closer to the center of rotation than the space provided with the early 707 is close to the axial portion 21 to form a narrow space therebetween, and The + of the rotary shaft 22 of the portion 14 and the _Beton bore of the rotary shaft 22, the inner peripheral surface of which is open to the ''乍' and the narrow spaces are connected, and then the housing 2 is provided with a flushing gas The flushing for flushing into the narrow space is again at the lower side of the heater unit 7, and the bottom surface portion 14 of the barrage 1 is attached to the circumference: the setting of the flushing heater unit 7 is empty, The flushing gas supply pipe LB is disposed, and as shown in the flow arrow of the rinsing emulsion of FIG. 7, the space in the shell 30 201025480 20 or even the installation space of the heater unit 7 is flushed with the gas, the flushing gas It is discharged from the gap between the turntable 2 and the shield unit 71 to the exhaust ports 61 and 62 via the exhaust region E. Thereby, it is possible to prevent the BTBAS gas or the helium gas from flowing from the lower side of the turntable 2 to the other side from either of the first processing region 91 and the second processing region 92, so that the flushing gas can achieve the function of separating the gas. Further, a separation gas supply pipe 51 is connected to the center portion of the top plate 11 of the vacuum vessel 1 to supply a separation gas (N2 gas) to the space 52 between the top plate 11 and the axial center portion 21. The separation gas system supplied to the space 52 is ejected toward the periphery along the narrow gap 50 of the projection 5 and the turntable 2 along the surface on the wafer mounting region side of the turntable 2. Since the space surrounded by the protruding portion 5 is filled with the separation gas, it is possible to prevent the reaction gas (BTBAS gas or 03 gas) from being mixed with each other via the center portion of the turntable 2 between the first processing region 91 and the second processing region 92. In other words, the film forming apparatus includes a central portion region C formed by dividing the center of rotation of the turntable 2 from the vacuum chamber 1 to separate the atmospheres of the first processing region 91 and the second processing region 92, wherein The center portion region C is formed with a discharge port that ejects the separation gas to the surface of the turntable 2 while being flushed by the separation gas in the rotation direction. Further, the discharge port described here corresponds to the narrow gap 50 between the protruding portion 5 and the turntable 2. Further, as shown in FIG. 2, FIG. 3 and FIG. 8, the side wall of the vacuum container 1 is formed with a transfer port 15 for transferring the wafer W between the external transfer arm 10 and the turntable 2, and the transfer port 15 is The opening and closing is performed by the valve shown in Fig. 201025480. Further, in the turntable: the wafer mounting region (recess 24) is transferred between the transfer arm 15 and the transfer arm (7), so that the transfer table 2 is provided at the transfer position. The concave portion 24 is an elevating mechanism (not shown) for transferring the lifting and lowering members 6 for lifting the wafer W. Further, as shown in FIG. 9, the film forming device is provided with a computer for controlling the device. The control unit 8 of the overall operation. The control unit includes a CPU 81, a memory 82, a processing program 83, a memory port 84, and a timer 86. In the memory 82, the flow rate Va of the 2BTBAS gas supplied from the first reaction gas nozzle 31 and the flow rate of the 髅3 gas supplied from the second reaction gas nozzle 32 are written for each process condition. Vb, the processing pressure P, the flow rate ratio F of the gas discharged from the first exhaust passage 63 and the third exhaust passage 63b (the flow rate of the gas flowing through the second exhaust passage 63b / flowing through the first exhaust passage 63 & The area of the processing conditions such as the gas flow rate. The gas flow rate ratio F is such that in the steady state, the gas flow supplied to the wafer W in the first processing region 91 and the second processing region 92 can be fixed in the plane and between the wafers W ( Stabilize) the value set. Specifically, the numerical values set are such that the processing temperature and the processing pressure are stably maintained at values corresponding to the process conditions, and the gas flows from the first exhaust passage 63a and the second exhaust passage 63b can be made. The flow 32 is maintained for the gas supplied from the second anti-wide gas nozzle 31 and the second reaction gas nozzle 32 (including the gas supplied as the flushing gas in more detail). The process conditions written in the memory 82 are read to the working memory 84, and the control signals are transmitted to the respective portions of the film forming apparatus according to the process conditions, and the wafer W processing command is executed by performing the steps described later. . The processing performed by the processing program 83, which describes the processing of the processing temperature to, for example, the processing conditions, is described before the supply of the BTBAS gas and the 03 gas (before the film formation process is performed). Then, the N2 gas having the same flow rate of the total gas flow rate supplied during the process is supplied to the vacuum container 1, and the pressure detection values obtained by the first process pressure detecting means 66a (66b) and the pressure detecting means 67 are used. The degree of opening of the first valve 65a and the degree of opening of the second valve 65b are adjusted so that the flow rate ratio F of the gas discharged from the first exhaust passage 63a and the second exhaust passage 63b and the pressure in the vacuum vessel 1 in this state are adjusted. (vacuum degree) P can reach the set value, and after the gas flow to be supplied to the wafer W is stabilized (after the steady state is formed), the BTBAS gas and the 03 gas are supplied to perform a film formation process which will be described later. When the flow rate ratio F of the exhaust gas and the pressure P in the vacuum vessel 1 are adjusted as described above, the first step of adjusting the pressure P in the vacuum vessel 1 by the first valve 65a is performed, and the second valve 65b is performed next. To adjust the second step of the flow ratio F of the exhaust gas, and then, as in the first step, the pressure P of the vacuum vessel 1 and the flow ratio F of the exhaust gas are repeatedly adjusted by the valves 65 until the passage Specific time (number of times) (specific steps are detailed later). In addition, although this example illustrates the case where the process conditions have different flow ratios F of the 2010 25480 gas gas, it is also possible to have a common flow ratio F of the exhaust gas for each process condition. The timer 86 is used to set the repetition time (return number) of the door 65 by the processing program 83. For example, the repeated time may be an automatic setting person or, for example, by an operator, for example, each process condition. Set their repeat time individually. The processing program 83 can be mounted in the control unit 80 from a memory (memory portion 85) such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a floppy disk.
其次’參考圖1〇〜圖15來說明前述實施形態的作 用。首先，從記憶體82讀出製程條件，再開啟圖中未 顯示的閘閥，使用搬送手臂10並經由搬送口 15而從外 部將晶圓W傳遞至迴轉台2之凹部24内（步驟S11)。 其中’當凹部24停止於面向搬送口 15的位置時，係使 得昇降銷16從真空容器1之底部側如圖8所示地穿過 凹部24底面的貫通孔而昇降以進行該傳遞。間歇性地 旋轉該迴轉台2以進行前述晶圓W之傳遞，而將晶圓 ❹ W各自載置於迴轉台2的5個凹部24内。接著，以進 行成膜處理時相同的轉速順時鐘地旋轉迴轉台2(步驟Next, the action of the above embodiment will be described with reference to Figs. 1 to 15 . First, the process conditions are read from the memory 82, the gate valve not shown in the figure is opened, and the transfer arm 10 is used to transfer the wafer W from the outside to the concave portion 24 of the turntable 2 via the transfer port 15 (step S11). When the concave portion 24 is stopped at the position facing the transfer port 15, the lift pin 16 is lifted and lowered from the bottom side of the vacuum container 1 through the through hole of the bottom surface of the recess 24 as shown in Fig. 8 to perform the transfer. The turntable 2 is intermittently rotated to transfer the wafer W, and the wafers W are each placed in the five recesses 24 of the turntable 2. Next, the turntable 2 is rotated clockwise at the same rotation speed as in the film forming process (step
Sl2) ’並依下列說明，於步驟S13(步驟S21〜步驟S28) 中進行真空容器1内之壓力P的調整與排氣氣體之流量 比F的調整。 首先’使第1閥門65a及第2閥門65b全開而將真 空交’ 益1内抽真空，並藉由加熱器單元7以將晶圓w 加熱至設定溫度(例如300。〇(步驟S21)。詳細說明，預 34 201025480 先藉由加熱器單元7來將迴轉台2加熱至例如30(TC， 並藉由將晶圓W載置於迴轉台2以使其如前述般地被 加熱至該設定溫度。然後’將後述成膜中供給至真空容 器1内之氣體總流量之相同流量的N2氣體供給至真空 容器1内。此時’如圖12A所示’從分離氣體喷嘴41、 42各自供給例如20000sccm、20000sccm之N2氣體的 同時，亦從第1反應氣體喷嘴31及第2反應氣體喷嘴 32各自供給例如i〇〇sccin、l〇〇〇〇sccm的N2氣體，藉 以從喷嘴31、32、41、42來供給等同於成膜中之氣體 分量。又，亦從分離氣體供給管51及沖洗氣體供給管 72將特定流量之A氣體供給至中心部區域C及前述之 狹窄空間内。再者，將壓力設定值設定為P1例如 1067Pa(8Torr)、流量比設定值設定為F1例如1.5以符 合製程條件之設定值（步驟S22)。其次，調整計時器％ 並將其設定為重覆後述步驟S24〜步驟27的時間tl(步 驟 S23)。 其次，如圖13所示，調整第1閥門65a之開口程 度(A1)以使得真空容器1内之壓力P達到其壓力設定值 P1為例如1067Pa(8T〇rr)(步驟S24)。具體說明，將第i 閥門65a之開口程度減小以使得流通於第1排氣通道 63a的氣體流量減少。接著，根據此時第丨閥門65a上 游側之壓力與下游侧之壓力（閥門前後）的壓力差（αρμ) 以及第2閥門65b前後的壓力差(APbl)來計算出各自流 通於排氣通道63之氣體的流量(Qai、qM)。然後，根 35 201025480 據該氣體流量來求得氣體流量比F(Qbl/Qal)，以判斷該 流量比F是否達到該設定值F1(步驟S25) ’在已達到設 定值F1之情況便前進至後述的步驟S14之成膜處理。 在當流量比較設定值F1為大之情況，則將第2閥門65b 之開口程度(B1)減小以使得流量比接近設定值F1(步驟 26)。 然後’確認壓力P是否偏離設定值P1(步驟S27)， 在未偏移之情況則前進至步驟S14之成膜處理。當壓力 偏離設定值P1之情況’則先判斷到此為止之製程（步驟 ® S24〜步驟S27)所花費時間是否已達到該步驟S23所設 定之重覆時間tl(步驟S28)，達到該重覆時間tl、抑或 於步驟S25或步驟S27中之流量比F及壓力P各自達到 其設定值F1及設定值P1為止，重覆步驟S24〜步驟S27 的製程。具體而言’在例如當調整閥門65b之開口程度 (步驟S26)而使得壓力P高於設定值pi之情況，則加大 閥門65a之開口程度，於使得壓力p低於設定值P1之 情況’則減小閥門65a之開口程度。又，當調整閥門65a ❹ 之開口程度（步驟S24)而使得流量比F高於設定值F1 之情況，則減小閥門65b之開口程度，於使得流量比F 低於設定值F1之情況’則加大閥門65b之開口程度。 如前述般交互調整閥門65a、65b之開口程度，如前述 圖13所示，藉以使得壓力P及流量比F各自接近（收斂） 至其設定值PI、F1。 進行該等步驟S24〜步驟S27而使得壓力P及流量 36 201025480 比F各自達到其設定值P1、F1之情況時，自排氣通道 63a、㈣所各自排出之氣體流量為池⑽、3〇s隨， 如前述® 12B所示，將此時第i _ 65&之開口程度及 第2閥門65b之開口程度各自設定為例如Α2、β2。另 一方面，即使於該㈣S28中超過其實施時限之情況， 由於係已交互地藉由第1閥門咖來進行壓力p之調 整、精由第2閥門65b來進行流量比F之調整，故如前 ❹ ❿ = 及流量比？與設定值P1及F1 里t隨耆重複進行該步驟而遂漸縮小。因此 過時限之時點的壓力p爲ϋ μ ρι 及仙·篁比F已非常接近設定值 ’-μ /卩使在超過其實施時限之情況，亦可 仃二後之錢處理(步驟叫)的後續製程。 之開口^产^第1間門^之開口程度及第2閥門65bSl2)', in accordance with the following description, the adjustment of the pressure P in the vacuum vessel 1 and the adjustment of the flow rate ratio F of the exhaust gas are performed in step S13 (steps S21 to S28). First, the first valve 65a and the second valve 65b are fully opened, and the vacuum is evacuated, and the heater unit 7 is used to heat the wafer w to a set temperature (for example, 300 〇 (step S21). In detail, the pre-34 201025480 first heats the turntable 2 to, for example, 30 (TC) by the heater unit 7, and by placing the wafer W on the turntable 2 to be heated to the setting as described above. Then, N2 gas of the same flow rate of the total gas flow rate supplied to the inside of the vacuum vessel 1 in the film formation described later is supplied to the vacuum vessel 1. At this time, 'as shown in Fig. 12A', the respective gas nozzles 41 and 42 are supplied from the separation gas nozzles 41 and 42. For example, N2 gas of 20,000 sccm and 20,000 sccm is supplied, and N 2 gas such as i 〇〇 sccin or l 〇〇〇〇 sccm is supplied from each of the first reaction gas nozzle 31 and the second reaction gas nozzle 32, whereby the nozzles 31 and 32 are supplied. 41 and 42 supply the gas component equivalent to the film formation. Further, the A gas having a specific flow rate is supplied from the separation gas supply pipe 51 and the flushing gas supply pipe 72 to the center portion region C and the aforementioned narrow space. , set the pressure setting to P1, for example 1067Pa (8 Torr), the flow rate setting value is set to F1, for example, 1.5 to meet the set value of the process condition (step S22). Next, the timer % is adjusted and set to repeat the time t1 of step S24 to step 27 described later (step S23). Next, as shown in Fig. 13, the degree of opening (A1) of the first valve 65a is adjusted such that the pressure P in the vacuum vessel 1 reaches its pressure set value P1 of, for example, 1067 Pa (8 T rrrr) (step S24). It is to be noted that the degree of opening of the i-th valve 65a is reduced so that the flow rate of the gas flowing through the first exhaust passage 63a is reduced. Then, according to the pressure on the upstream side of the second valve 65a and the pressure on the downstream side (before and after the valve) The pressure difference (αρμ) and the pressure difference (APbl) before and after the second valve 65b calculate the flow rate (Qai, qM) of the gas flowing through the exhaust passage 63. Then, the root 35 201025480 determines the gas based on the gas flow rate. The flow rate ratio F(Qbl/Qal) is determined to determine whether the flow rate ratio F has reached the set value F1 (step S25). When the set value F1 has been reached, the process proceeds to a film forming process of step S14, which will be described later. If the set value F1 is large, then The opening degree (B1) of the second valve 65b is decreased so that the flow ratio is close to the set value F1 (step 26). Then, 'check if the pressure P deviates from the set value P1 (step S27), and if it is not offset, proceed to The film forming process of step S14. When the pressure deviates from the set value P1, it is determined whether the time taken to the process (steps S24 to S27) has reached the repetition time t1 set in the step S23 (step S28), until the repetition time t1 is reached, or the flow rate ratio F and the pressure P in the step S25 or the step S27 reach the set value F1 and the set value P1, respectively, and the processes of steps S24 to S27 are repeated. Specifically, 'in the case where the degree of opening of the valve 65b is adjusted (step S26) such that the pressure P is higher than the set value pi, the degree of opening of the valve 65a is increased, so that the pressure p is lower than the set value P1' Then, the degree of opening of the valve 65a is reduced. Further, when the degree of opening of the valve 65a is adjusted (step S24) such that the flow ratio F is higher than the set value F1, the degree of opening of the valve 65b is reduced so that the flow ratio F is lower than the set value F1. Increase the degree of opening of the valve 65b. The degree of opening of the valves 65a, 65b is alternately adjusted as described above, as shown in Fig. 13, so that the pressure P and the flow ratio F are each close (converged) to their set values PI, F1. When the steps S24 to S27 are performed such that the pressure P and the flow rate 36 201025480 are respectively at the set values P1 and F1, the gas flow rates respectively discharged from the exhaust passages 63a and (4) are pools (10), 3〇s. Then, as shown in the above paragraph 12B, the degree of opening of the i-th 65 & and the degree of opening of the second valve 65b are set to, for example, Α2 and β2. On the other hand, even if the (4) S28 exceeds the execution time limit, since the adjustment of the pressure p is performed alternately by the first valve coffee, and the flow rate ratio F is adjusted by the second valve 65b, Front ❹ ❿ = and flow ratio? With the set values P1 and F1, t repeats this step and then gradually decreases. Therefore, the pressure p at the time when the time limit is exceeded is ϋ μ ρι and the ratio of 仙 篁 F is very close to the set value '-μ / 卩 so that the time limit is exceeded, and the money can be processed (step called) Follow-up process. The opening ^ production ^ the opening degree of the first door ^ and the second valve 65b
及流量比^。娜⑽持前述㈣賴定的壓力P 32之第2頂面4^中’沿著設置有反應氣體嘴嘴31、 緣壁處如#、+、^下方側空間而於容器本體12之内周 61、62餘勒躲壁切㈣舰，且排氣口 方側办間的懕I廣空間的下方，故第2頂面45之下 工、壓力係較第1頂面44之下方#j的狭 以及前記中心邱阳，丄 「々惻的狄U工間 然後，藉由等各壓力值更低。And flow ratio ^. Na (10) holds the second top surface 4 of the pressure P 32 of the above (4) and is disposed in the inner circumference of the container body 12 along the space provided with the reaction gas nozzle 31 and the edge wall such as #, +, ^ 61, 62 Yu Lei wall cut (four) ship, and the side of the exhaust side of the side of the 懕I wide space, so the second top surface 45 under the work, the pressure is lower than the first top surface 44 #j Narrow and pre-recorded center Qiu Yang, 丄 々恻 々恻 狄 狄 U U 工 然后 然后 然后 然后 然后 然后 U U U U U U U
.9 9 中未顯不之溫度感測器來確認晶圓W 定溫度，再確認真空容11 1内之壓力 盆4如^ _之流量比F是否安定地維持於穩定狀態。 兵久，如圖14 Α叱《 » 斤不，將第1反應氣體噴嘴31及第2 37 201025480 反應氣體噴嘴32所供給之氣體由乂氣體而各自切換至 BTBAS氣體及〇3氣體（步驟S14)。此時，如圖14B所 示’以不改變供給至真空容器i内的氣體之總流量(自 f喷„、32所供給的氣驗量)的方絲切換氣體。 藉由月’J述之氣體切換’可抑制流向晶圓W之氣流的變 動又亦ΊΓ抑制真空谷器^内之壓力變動。因此，即使 未如則述各步驟S21〜S28般地再次調整第丨閥門65a 之開口程度及第2閥門65b之開口程度，如圖uc所 不，亦能讓真空容器i内之壓力P、排氣氣體流量比F © 維持於設定值P1及Π。因此，切換氣體時能使真空容 器1内維持於穩定狀態，如圖15所示，能使得晶圓w 之面内乃至面之間的氣流穩定化。又，於前述之成膜 ^ ’係針對_ 65之開口程度進行微調整以使得自排 氣通道63a、63b所排出之氣流的流量比F維持於設定 值F1 ’因此供給至晶圓W的氣流不會產生紊亂，而可 ，持於該穩定狀態。另外，前述圖14A係概略地顯示各 氣體之流量。 ❹ 、然後，藉由迴轉台2的旋轉使得晶圓w交互地通 ，第1處理區域91與第2處理區域92,而吸附BTBAS 氣體’其次再吸附〇3氣體而使得BTBAS分子受氧化以 开乂成1層或複數層的氧化㊉分子層，如此般依序層積氧 化矽分子層以形成具特定膜厚的矽氧化膜。 此時，第1處理區域91及第2處理區域92之間係 供給有N2氣體’又中心部區域c處亦供給有分離氣體 38 201025480 (N2氣體）’再者係針對閥門&之開口程度進行微調整 以使得供給至晶圓W的氣流穩定化，因此能不二得 BTBAS氣體與〇3氣體相互混合而將各氣體排出。又'， 於分離區域D處，因彎曲部46與迴轉台2外端面之間 的間隙係如前述般地狹窄，故BTBAS氣體與A氣體不 ，經由迴轉台2外側而相互混合。因此，能使第丨處理 區域91之氣氛與第2處理區域92之氣氛完全地分離， ❹ 將，TBAS氣體排出至排氣口 61，而將ο;氣體排出至 排氣口 62。其結果，BTBAS氣體及A氣體於氣氛中或 於晶圓W上皆不會相互混合。 另外，本範例係藉由Nz氣體來沖洗迴轉台2之下 、J因此元王無需擔心流入至排氣區域E的氣體會潛 =迴轉台2之下方側而使得例如BTBAS氣體流入至& 乳體，供給區域。完成前述成膜處職，停止供給氣體 並進行真空容器丨内之真空排氣(步驟si5)，然後停止 ❹ 旋轉迴轉台2並藉由搬送手臂1()以搬人時之相反動作 來依序地將各晶圓W搬出（步驟S16)。 。此處5己載處理參數之一範例，係以直徑3〇〇mm的 晶圓w作為被處理基板之情況，迴轉台2之轉速為例 如〜500rpm，來自真空容器}中心部的分離氣體 供給官51之％氣體流量為例如5〇〇〇sccm。又，針對i 片晶圓W所進行之反應氣體供給的循環次數，即晶圓 W各自通過—域91、92的次數會隨著目標膜厚而 改變，多數次係例如為600次。 39 201025480 依前述實施形態’在共通之真空容器1内沿著迴轉 台2之迴轉方向形成各自被供給有會相互反應之反應 氣體(BTBAS氣體及03氣體)的處理區域9卜92，藉由 迴轉台2來讓晶圓W依序地通過該等處理區域91、92 内以層積多層之反應生成物層而形成薄膜，其中，在處 理區域91、92之間介設有供給分離氣體的分離區域D， 同時於排氣口 61、62所在位置處設置有第1排氣通道 63a及第2排氣通道63b來將各相異之反應氣體分離而 進行排氣。然後’調整第1閥門65a之開口程度及第2 閥門65b之開口程度以使得自該等排氣通道63a、63b 所排出之氣體流量比F達到設定值FI，且真空容器1 内之壓力P達到設定值P1。因此，可於分離區域D兩 側形成穩定適當的氣流’由於晶圓w表面處之反應氣 體(BATAS、〇3)的氣流固定化，故在使得btbAS氣體 之吸附狀態穩定化的同時，使得〇3氣體對該吸附分子 的氧化反應亦穩定化，其結果便可於晶圓w之面内及 面之間處獲得膜厚均勻而膜質均勻且良好的薄膜。 再者，由於能防止分離區域D兩侧之排氣的偏差， 因此能避免BTBAS氣體與〇3氣體穿過分離區域D而 相互混合，藉以抑制在晶圓w之表面以外處產生反應 生成物，因而能抑制微粒的產生。 又，計算排氣氣體之流量比F時，如前述般地，係 根據第1閥門65a剞後(上游側及下游側）的壓差及第2 閥門65b前後的壓差來計算出實際流通於排氣通道 201025480 63a、63b的流量，故能正確地計算出該流量比F。因此， 即使因内部堆積有生成物或因使用時間導致劣化等，而 使得真空泵64a、64b之間產生排氣能力之個體差異時， 亦可正確地計算出流量比F。 再者，如前述地將排氣氣體之流量比F調整至設定 值F1時’並非以實際進行成膜的反應氣體而是以n2 氣體來進行的’在調整流量比F時，即真空容器1内之 氣流有紊亂之虞時，反應氣體並未接觸至晶圓W，故可 抑制氣流紊亂之反應氣體對晶圓W所造成之影響。又， 如前述地在調整流量時，預先流通有反應氣體之份量的 N2氣體’然後再流通反應氣體以代替n2氣體，因此在 流量比F調整完成後開始流通反應氣體時，真空容器1 内不會產生氣流紊亂，又，總氣體流量與自排氣通道 63a、63b所排出之氣體流量亦不會產生變化，故於反應 初期（由N2氣體將氣體切換為反應氣體）亦可抑制氣流 紊离L。 又再者，如前述般地係在迴轉台2之迴轉方向設置 複數個晶圓W，並旋轉該迴轉台2以使其依序通過第1 處理區域91與第2處理區域92來進行所謂之AL〇(或 ML〇)，故能以高產能地進行成膜處理。接著，於該迴 轉方向中第1處理區域91與第2處理區域92之間設ί 有具備較低頂面的分離區域D，同時從藉由迴轉台2之 迴轉中心部與真空容器1所劃分形成之中心部齒威C朝 迴轉台2周緣喷出分離氣體，並使得擴散至該分離區域 201025480 D兩侧的分離氣體以及自該中心部區域c喷出的分離 氣體一同地與該反應氣體經由迴轉台2周緣與真空容 器内周緣壁之間隙排出，故能防止兩反應氣體相互混 合’其結果能良好地進行成膜處理，使得在迴轉台2上 完全不會產生（或積極抑制）反應生成物，以抑制微粒的 產生。另外’本發明亦可適用於在迴轉台2上載置1個 晶圓W之情況。 另外’前述範例中，步驟S21係將第1閥門65a、 第2閥門65b全開以進行抽真空’但是例如預先計算出❹ 第2閥門65b之開口程度以及由第2排氣通道63b所排 出之氣體流量的關係，而於例如步驟S24中進行第i閥 門65a之調整時，即可將該第2閥門65b調整至前述開 口程度。此時便可快速地進行壓力值之調整與流量比之 調整。又，由於壓力與流量比之調整量（變動量）變少， 故此時亦可不使用前述之氣體而使用反應氣體來進 行壓力與流量比之調整。 又，前述範例中，進行壓力p與流量比F之調整時❹ 的A氣體流量係等於後續切換氣體以進行成膜時之反 應氣體的流量，但其僅需為幾乎相等之流量（例如±5% 左右）’即可如前述般地抑制流向晶圓w之氣流紊亂。 本實施形態中，於超過步驟§28之實施時限之情 =，雖然此時之壓力P及流量比？係在非常接近其各設 定值P1、F1而進行後續之製程(步驟S14以後），但亦 了於此時顯示例如警示訊號並停止後續之成膜處理。 42 201025480 (第2實施形態） 第1實施形態係僅藉由調整閥門65a、65b之開口 程度來控制真空容器1内之壓力P與排氣通道63a、63b 之流量比F，但亦可進一步藉由調整真空泵64b之轉速 來調整該真空泵64b之排氣流量(排氣能力）以進行前述 控制。 如圖16所示，該真空泵64b係連接有作為調整該 真空系64b的排氣流量用機構之變流器68(inverter)，藉 由該變流器68來調整流通於真空泵64b之電流值，即 調整該真空泵64b之轉速(排氣流量）。因此本範例中， 前述製程條件亦收納有關於該真空泵64b之轉速R。另 外’其他之裝置結構與作用等皆與前述實施形態相同， 故此處便省略記載。 接著’當反覆地以第1閥門65a進行壓力控制、以 第2閥門65b進行流量控制而超過其實施時限之情況 (步驟S28) ’如圖17所示，便進行調整真空泵64b之轉 速R的第3步驟(步驟S29)。即，例如在藉由第2閥門 65b進行流量比F之調整（步驟S26)後，確認其壓力p(步 驟S27)，當該壓力P未達設定值之情況，則調整真 空系64b之排氣量直到壓力P達到設定值pl。具體說 明，壓力p為設定值pi以上之情況（即真空泵64b的排 氣里不足之情況），便將變流器饨之電流值設定為能提 高真空果64b之轉速R以增加真空泵6牝之排氣量，相 43 201025480 反地，壓力p較設定值P1更低之情況，則減低真空 64b之轉速r以減少真空泵64b之排氣量。 一 其次，再次藉由計時器86來設定重覆時間u，、 重覆前述各步驟S24〜步驟S27。藉由前述調整真办並 64b之轉速R而使得步驟S25或步驟S27中壓力 量比F達到設定值pi及F1之情況，便前進至前述之^ 膜處理（步驟S14)，而進行調整真空泵64b之轉速r後 仍未達設定值PI、F1之情況，則再次進行步驟S29^ 整真空泵64b之轉速R)。接著，直到超過重覆時間^❹ 抑或直到壓力P及流量比F已各自達到其設定值ρι、 F1為止，反覆地進行步驟S24〜S28。另外，當超過反 複時間tl但壓力P及流量比ρ仍未達到設定值ρι、 之情>兄，由於調整了閥門65a、65b之開口程度與真空 泵64b之轉速R，而如前述實施形態般地’壓力p及流 量比F會各自接近（收斂)至其設定值PI、F1，故超過實 施時限之情況時之壓力p及流量比F便會各自接近其設 定值P1及F1。 © 因此，超過實施時限之情況，亦可進行後續之成膜 處理(步驟S14)。 依本實施形態，除了前述效果亦可獲得下列效果。 即’僅調整第1閥門65a之開口程度及第2閥門65b之 開口程度仍無法在設定時間（tl)内完成壓力P及流量比 F之調整的情況，係調整真空泵64b之轉速R後再調整 閥門65a、65b之開口程度，因此例如真空泵64a、64b 44 201025480 之排氣能力具有個體差異時，亦可各自設置壓力P及流 量比F以使其達到設定值pi、F1。換言之’藉由與閥 門65a、65b之開口程度一同地調整真空泵64b之轉速 R，因此可說是能於較廣範圍内進行壓力P及流量比F 之設定。 另外’本範例雖係調整真空泵64b之轉速R，但亦 可將變流器連接至真空泵64a以取代該真空泵64b來調 整該真空泵64a之轉速R，或亦可針對兩真空泵64進 行轉速R之調整。針對兩真空泵64進行轉速R調整之 情況’例如可於前述步驟S29中同時地調整真空泵 64a、64b之轉速R、抑或當調整真空泵64b之轉速R(步 驟S29)後且超過實施時限之情況(步驟S28) ’再調整另 一個真空栗64a之轉速r，並再次設定重覆時間tl(步 驟S23)而同時調整閥門65a、65b之開口程度（步驟S24 〜S28)。 又’雖係例如於步驟S28中，於超過實施時限時進 行步驟S29 ’但亦可在例如步驟S27與步驟S28之間進 行該步驟S29，而反覆地進行在調整閥門65a、65b之 開口程度的同時亦調整該真空泵64b之轉速。再者，在 最初的步驟S27(反覆進行各步驟之前）中，亦可例如在 壓力P遠大於設定值P1之情況，於反覆地進行各步驟 S24〜S27之前先進行步驟S29，然後再反覆地進行前述 各步驟S24〜S27。 前述各範例中，係藉由從兩條排氣通道63a、63b 45 201025480 來各自排出會相互反應之反應氣體，而可獲得抑制排氣 通道63内與真空泵64内產生反應生成物的效果，但例 如該排氣通道63内與真空泵64内之溫度較低而使得反 應氣體之間不易引發反應時，如圖18所示，亦可使真 空泵64a、64b形成共通化。此時便可獲得降低裴置成 本的效果。 作為本發明適用之處理氣體，除前述範例之外，亦 可舉出DCS[二氯矽烷]、HCD[六氯二矽曱烷]、TMA[三 甲基鋁]、3DMAS[三（二甲胺基)矽烷;j、TEMAZ[四（乙基❿ 甲基胺基酸)-錘]、TEMAH[四（乙基曱基胺基酸銓]、 Sr(THD)2[:(四曱基庚二酮酸)-錄]、Ti(MPD)(THD)[甲 基戊二酮酸)(雙四曱基庚二酮酸)鈦]以及單胺基矽 等。 又，前述分離區域D之頂面44處，較佳地，相對 於該分離氣體噴嘴41、42之迴轉台2的迴轉方向上游 側部位處’越接近其外緣部位則該迴轉方向之寬度越 大。其理由係因迴轉台2之迴轉而自上游側流向分離區❹ 域D之氣流在越接近其外緣處則越快。依此觀點，如前 述般地以扇型來構成凸狀部4便為良策。 然後’如圖19A、B所示之該分離氣體噴嘴41般， f於該分離氣體噴嘴41(42)兩侧形成有狹隘空間的該 第1頂面44 ’在以例如直徑300mm之晶圓W作為被處 理基板之情況，則晶圓W之中心WO所通過部位處沿 迴轉台2之迴轉方向的寬度尺寸L為50mm以上者較 46 201025480 佳。為了有效地阻止反應氡體自凸狀部4兩侧侵入至該 凸狀部4下方(狹隘空間），前述寬度尺寸L過短時則必 須對應地縮小第1頂面44輿迴轉台2之間的距離h。 再者，將第1頂面44與迴轉台2之間的距離h設定為 某特定尺寸時，離該迴轉台2之迴轉中心越遠則迴轉台 2之速度便越快，因此離迴轉中心越遠，則為了獲得阻 止反應氣體侵入之效果所需的該寬度尺寸L則越長。依 ❿ 前述觀點考量，當晶圓W之中心w〇所通過部位之該 寬度尺寸L小於5〇mm時，便需要相當程度地縮小第1 頂面44與迴轉台2之間的矩離h，因此在旋轉該迴轉 口 2時，便需要花費心力去積極地抑制迴轉台2之振 動，以防止迴轉台2或晶圓w撞擊至頂面44。又再者， 迴轉台=之轉速越高，則反應氣體越容易自凸狀部4之 上游側钕入至該凸狀部4之下方侧，因此當該寬度尺寸 L小於50mm時，便必須要降低迴轉台2之轉速，然就 ❹ 產志之觀點來看並非良策。因而該寬度尺寸L為50mm 以上者較隹’但並非是指50mm以下便無法獲得本發明 之效果。即’該寬度尺寸L為晶圓W直徑之1/1〇〜l/ι 者較佳’約為1/6以上者更佳。 又’未發明之分離氣體供給機構中，係需要有位於 迴轉方向兩側之較低頂面44，但並非限定於在前述分 離氣體喷嘴41、42兩側設置凸狀部4的結構，亦可採 用如圖20所示，於凸狀部4内部朝迴轉台2之直徑方 向延伸而形成分離氣體之流通室47,並沿長度方向於 47 201025480 該流通室47底部貫穿設置有多數個氣體喷出孔40的結 構。 分離區域D之頂面44並非限定為平坦面，亦可為 如圖21A所示之凹面形狀的結構，也可為如圖21B所 示之1¾面形狀，抑或如圖21C所示之波浪狀結構。 作為加熱晶圓w的加熱機構並非限定為使用了電 阻發熱體的加熱器，亦可使用燈加熱裝置，且代替設置 於迴轉台2之下方侧的方式，亦可設置於迴轉台2之上 方側、抑或設置於上下兩侧。又，若前述反應氣體係於❹ 低溫(例如常溫)下進行反應之情況’亦可無需設置該加 熱機構。 此處’舉出除了前述實施形態以外之關於處理區域 91、92及分離區域〇等各配置方式的其他範例。圖22 係將第2反應氣體喷嘴32設置於搬送口 15之迴轉台2 的迴轉方向上游側位置的範例，依前述配置亦可獲得相 同之效果。又，前述已說明了該分離區域D亦可為藉由 扇塑凸狀部4將其沿圓周方向分割成2部份且於其中間❹ 處設置有分離氣體喷嘴41(42)的結構，而圖23係為此 結構之一範例的俯視圖。此時’扇型凸狀部4與分離氣 體喷嘴41(42)之間的距離以及扇型凸狀部4的大小等， 係考慮分離氣體之喷出流量與反應氣體之噴出流量等 而設定為能使分離區域D有效地發揮其分離作用的尺 寸。 前述實施形態中，前述第1處理區域91及第2處.9 9 The temperature sensor is not displayed to confirm the temperature of the wafer W, and then confirm the pressure in the vacuum chamber 11 1 . If the flow rate of the basin 4 is stable, the temperature is maintained at a steady state. For a long time, as shown in Fig. 14, the gas supplied from the first reaction gas nozzle 31 and the second 37 201025480 reaction gas nozzle 32 is switched from the helium gas to the BTBAS gas and the helium gas 3 (step S14). . At this time, as shown in Fig. 14B, the gas is switched by the square wire which does not change the total flow rate of the gas supplied to the inside of the vacuum vessel i (the gas test amount supplied from the f-spraying, 32). The gas switching 'suppresses the fluctuation of the airflow flowing to the wafer W and also suppresses the pressure fluctuation in the vacuum damper. Therefore, even if the steps of the second valve 65a are not adjusted again as described in the steps S21 to S28, The degree of opening of the second valve 65b, as shown in Fig. uc, can also maintain the pressure P and the exhaust gas flow rate ratio F © in the vacuum container i at the set values P1 and Π. Therefore, the vacuum container 1 can be switched when the gas is switched. The inside is maintained in a stable state, and as shown in Fig. 15, the airflow in the plane or even between the faces of the wafer w can be stabilized. Further, the film formation is finely adjusted for the degree of opening of the film _ 65 so that Since the flow rate ratio F of the airflow discharged from the exhaust passages 63a and 63b is maintained at the set value F1', the airflow supplied to the wafer W is not disturbed, and may be held in the steady state. The ground shows the flow of each gas. 、, then, by back The rotation of the turntable 2 causes the wafers w to alternately pass through, the first processing region 91 and the second processing region 92, and the adsorption of the BTBAS gas 'secondarily adsorbs the 〇3 gas, so that the BTBAS molecules are oxidized to open into one or more layers. The oxidized tenth sublayer is laminated in this order to form a tantalum oxide film having a specific film thickness. In this case, N2 gas is supplied between the first processing region 91 and the second processing region 92. The center portion c is also supplied with the separation gas 38 201025480 (N2 gas)'. Further, the degree of opening of the valve & is finely adjusted to stabilize the gas flow supplied to the wafer W, so that the BTBAS gas can be obtained. The 〇3 gas is mixed with each other to discharge the respective gases. Further, in the separation region D, since the gap between the curved portion 46 and the outer end surface of the turntable 2 is narrow as described above, the BTBAS gas and the A gas are not passed through. The outside of the turntable 2 is mixed with each other. Therefore, the atmosphere of the second processing region 91 can be completely separated from the atmosphere of the second processing region 92, and the TBAS gas can be discharged to the exhaust port 61, and the gas can be discharged to the exhaust port 61. Exhaust port 62. its knot The BTBAS gas and the A gas are not mixed with each other in the atmosphere or on the wafer W. In addition, in this example, the Nz gas is used to flush the underside of the turntable 2, so that the king does not have to worry about flowing into the exhaust region E. The gas will be submerged = the lower side of the turntable 2 so that, for example, the BTBAS gas flows into the & milk, supply region. When the film forming operation is completed, the supply of gas is stopped and vacuum evacuation in the vacuum vessel is performed (step si5). Then, the rotation of the turntable 2 is stopped, and each wafer W is sequentially carried out by the opposite operation of the transfer arm 1 () (step S16). Here, one example of the processing parameters of 5 is loaded. In the case where the wafer w having a diameter of 3 mm is used as the substrate to be processed, the number of revolutions of the turntable 2 is, for example, ～500 rpm, and the gas flow rate of the separated gas supply officer 51 from the center of the vacuum vessel is, for example, 5 〇〇〇. Sccm. Further, the number of cycles of supply of the reaction gas to the wafer Wafer W, i.e., the number of times the wafers W pass through the domains 91 and 92, varies depending on the target film thickness, and the number of times is, for example, 600 times. 39 201025480 According to the above-described embodiment, a processing region 9 92 in which the reaction gases (BTBAS gas and 03 gas) which are mutually reacted are supplied in the direction of rotation of the turntable 2 in the common vacuum vessel 1 is rotated. The stage 2 allows the wafer W to sequentially form a film by laminating a plurality of reaction product layers in the processing regions 91 and 92, wherein a separation of the supply separation gas is disposed between the processing regions 91 and 92. In the region D, the first exhaust passage 63a and the second exhaust passage 63b are provided at the positions of the exhaust ports 61 and 62, and the respective reaction gases are separated and exhausted. Then, 'the degree of opening of the first valve 65a and the degree of opening of the second valve 65b are adjusted so that the gas flow ratio F discharged from the exhaust passages 63a, 63b reaches the set value FI, and the pressure P in the vacuum vessel 1 reaches Set value P1. Therefore, a stable and appropriate airflow can be formed on both sides of the separation region D. Since the flow of the reaction gas (BATAS, 〇3) at the surface of the wafer w is fixed, the adsorption state of the btbAS gas is stabilized, and 〇 is made. The oxidation reaction of the gas to the adsorbed molecules is also stabilized, and as a result, a film having a uniform film thickness and a uniform film quality can be obtained in the plane and between the faces of the wafer w. Further, since the deviation of the exhaust gas on both sides of the separation region D can be prevented, the BTBAS gas and the 〇3 gas can be prevented from passing through the separation region D to be mixed with each other, thereby suppressing generation of a reaction product outside the surface of the wafer w. Therefore, the generation of fine particles can be suppressed. When the flow rate ratio F of the exhaust gas is calculated, the pressure difference between the first valve 65a (upstream side and the downstream side) and the pressure difference between the front and rear of the second valve 65b are calculated as described above. The flow rate of the exhaust passages 201025480 63a, 63b can correctly calculate the flow ratio F. Therefore, even if there is an individual difference in the exhausting ability between the vacuum pumps 64a and 64b due to the accumulation of the product inside or deterioration due to the use time, the flow rate ratio F can be accurately calculated. Further, when the flow rate ratio F of the exhaust gas is adjusted to the set value F1 as described above, 'the reaction gas which is not actually formed, but the n2 gas is used', when the flow rate ratio F is adjusted, that is, the vacuum vessel 1 When the gas flow inside is disordered, the reaction gas does not contact the wafer W, so that the influence of the reaction gas of the gas flow disorder on the wafer W can be suppressed. Further, when the flow rate is adjusted as described above, the amount of the N 2 gas of the reaction gas is distributed in advance, and then the reaction gas is recirculated instead of the n 2 gas. Therefore, when the reaction gas is started to flow after the flow rate ratio F is completed, the vacuum vessel 1 does not flow. The airflow is disturbed, and the total gas flow rate and the gas flow rate discharged from the exhaust passages 63a, 63b are not changed, so that the gas flow can be suppressed at the initial stage of the reaction (the gas is switched to the reaction gas by the N2 gas). L. Further, as described above, a plurality of wafers W are provided in the rotation direction of the turntable 2, and the turntable 2 is rotated to sequentially pass the first processing region 91 and the second processing region 92 to perform so-called Since AL〇 (or ML〇), it is possible to perform film formation at a high productivity. Then, in the rotation direction, a separation region D having a lower top surface is provided between the first processing region 91 and the second processing region 92, and is divided by the center portion of the rotary table 2 and the vacuum container 1 The center portion of the formed portion sends a separation gas toward the periphery of the turntable 2, and causes the separation gas diffused to both sides of the separation region 201025480 D and the separation gas ejected from the central portion region c to be together with the reaction gas. Since the peripheral edge of the turntable 2 is discharged from the gap between the inner peripheral wall of the vacuum vessel, it is possible to prevent the two reaction gases from being mixed with each other. As a result, the film formation process can be performed satisfactorily, so that the reaction generation is not generated (or actively suppressed) on the turntable 2 at all. Object to suppress the generation of particles. Further, the present invention is also applicable to the case where one wafer W is placed on the turntable 2. Further, in the above-described example, in step S21, the first valve 65a and the second valve 65b are fully opened to perform vacuuming. However, for example, the degree of opening of the second valve 65b and the gas discharged from the second exhaust passage 63b are calculated in advance. In the relationship of the flow rate, for example, when the adjustment of the i-th valve 65a is performed in step S24, the second valve 65b can be adjusted to the extent of the opening. At this point, the adjustment of the pressure value and the adjustment of the flow ratio can be quickly performed. Further, since the adjustment amount (variation amount) of the pressure and the flow rate ratio is small, the reaction gas can be used to adjust the pressure to flow ratio without using the gas described above. Further, in the above example, the flow rate of the A gas when the pressure p is adjusted to the flow rate ratio F is equal to the flow rate of the reaction gas when the gas is subsequently switched to form a film, but it only needs to be an almost equal flow rate (for example, ±5) % or so) 'The flow disturbance to the wafer w can be suppressed as described above. In this embodiment, the time limit exceeds the implementation time limit of step § 28, although the pressure P and the flow ratio at this time? The subsequent process is performed very close to its respective set values P1, F1 (after step S14), but at this time, for example, an alert signal is displayed and the subsequent film forming process is stopped. 42 201025480 (Second Embodiment) In the first embodiment, the flow rate ratio F between the pressure P in the vacuum chamber 1 and the exhaust passages 63a and 63b is controlled only by adjusting the degree of opening of the valves 65a and 65b, but it is possible to further borrow The exhaust flow rate (exhaust capacity) of the vacuum pump 64b is adjusted by adjusting the number of revolutions of the vacuum pump 64b to perform the aforementioned control. As shown in FIG. 16, the vacuum pump 64b is connected to a current transformer 68 as a mechanism for adjusting the exhaust gas flow rate of the vacuum system 64b, and the current converter 68 adjusts the current value flowing through the vacuum pump 64b. That is, the rotation speed (exhaust flow rate) of the vacuum pump 64b is adjusted. Therefore, in the present example, the process conditions also include the rotational speed R of the vacuum pump 64b. Further, other device configurations, operations, and the like are the same as those of the above-described embodiment, and thus the description thereof will be omitted. Then, when the pressure is controlled by the first valve 65a and the flow rate is controlled by the second valve 65b and the time limit is exceeded (step S28)', as shown in Fig. 17, the rotation speed R of the vacuum pump 64b is adjusted. 3 steps (step S29). That is, for example, after the flow rate ratio F is adjusted by the second valve 65b (step S26), the pressure p is confirmed (step S27), and when the pressure P does not reach the set value, the exhaust of the vacuum system 64b is adjusted. The amount until the pressure P reaches the set value pl. Specifically, when the pressure p is equal to or greater than the set value pi (i.e., the exhaust gas of the vacuum pump 64b is insufficient), the current value of the converter 设定 is set to increase the rotational speed R of the vacuum fruit 64b to increase the vacuum pump 6 Exhaust volume, phase 43 201025480 Inversely, if the pressure p is lower than the set value P1, the rotation speed r of the vacuum 64b is reduced to reduce the displacement of the vacuum pump 64b. First, the reset time u is set again by the timer 86, and the above steps S24 to S27 are repeated. When the pressure amount ratio F in step S25 or step S27 is brought to the set values pi and F1 by the above-described adjustment of the rotation speed R of the step 64 or the step Bb, the process proceeds to the above-described film processing (step S14), and the adjustment vacuum pump 64b is performed. If the set values PI and F1 have not been reached after the rotation speed r, the rotation speed R) of the vacuum pump 64b is again performed in step S29. Then, until the repetition time is exceeded or until the pressure P and the flow rate ratio F have respectively reached the set values ρι, F1, the steps S24 to S28 are repeatedly performed. Further, when the repetition time t1 is exceeded but the pressure P and the flow rate ratio ρ have not reached the set value ρι, the brothers have adjusted the opening degree of the valves 65a and 65b and the rotation speed R of the vacuum pump 64b as in the above embodiment. The ground pressure 'P and the flow rate ratio F will each approach (converge) to their set values PI, F1, so the pressure p and the flow ratio F will be close to their set values P1 and F1 when the time limit is exceeded. © Therefore, if the time limit is exceeded, the subsequent film formation process can be performed (step S14). According to this embodiment, in addition to the aforementioned effects, the following effects can be obtained. That is, it is not possible to adjust the pressure P and the flow rate ratio F within the set time (tl) by merely adjusting the degree of opening of the first valve 65a and the opening degree of the second valve 65b, and adjusting the rotation speed R of the vacuum pump 64b. The degree of opening of the valves 65a, 65b is such that, for example, when the exhaust capacities of the vacuum pumps 64a, 64b 44 201025480 have individual differences, the pressure P and the flow ratio F can be set to reach the set values pi, F1, respectively. In other words, by adjusting the rotation speed R of the vacuum pump 64b together with the degree of opening of the valves 65a and 65b, it can be said that the pressure P and the flow rate ratio F can be set in a wide range. In addition, although the present example adjusts the rotational speed R of the vacuum pump 64b, the converter may be connected to the vacuum pump 64a to adjust the rotational speed R of the vacuum pump 64a instead of the vacuum pump 64b, or the rotational speed R may be adjusted for the two vacuum pumps 64. . For the case where the two vacuum pumps 64 are adjusted in the rotation speed R, for example, the rotation speeds R of the vacuum pumps 64a, 64b can be simultaneously adjusted in the above step S29, or when the rotation speed R of the vacuum pump 64b is adjusted (step S29) and the execution time limit is exceeded (steps) S28) 'Adjust the rotation speed r of the other vacuum pump 64a, and set the repetition time t1 again (step S23) while adjusting the opening degree of the valves 65a, 65b (steps S24 to S28). In addition, for example, in step S28, step S29' is performed when the time limit is exceeded, but the step S29 may be performed between, for example, step S27 and step S28, and the opening degree of the adjustment valves 65a, 65b is repeatedly performed. At the same time, the rotational speed of the vacuum pump 64b is also adjusted. Furthermore, in the first step S27 (before the steps are repeated), for example, in the case where the pressure P is much larger than the set value P1, the step S29 is performed before the steps S24 to S27 are repeatedly performed, and then the step S29 is performed. Each of the above steps S24 to S27 is performed. In each of the above-described examples, by reacting the reaction gases that react with each other from the two exhaust passages 63a, 63b 45 201025480, it is possible to suppress the reaction product generated in the exhaust passage 63 and the vacuum pump 64, but For example, when the temperature in the exhaust passage 63 and the inside of the vacuum pump 64 are low and the reaction between the reaction gases is less likely to occur, as shown in Fig. 18, the vacuum pumps 64a and 64b may be formed in common. At this point, you can get the effect of reducing the cost of the device. As the processing gas to which the present invention is applied, in addition to the above examples, DCS [dichlorodecane], HCD [hexachlorodioxane], TMA [trimethylaluminum], 3DMAS [tris(dimethylamine) may also be mentioned. Base; decane; j, TEMAZ [tetrakis (ethyl ❿ methyl amino acid) - hammer], TEMAH [tetrakis (ethyl decyl guanidine), Sr (THD) 2 [: (tetradecyl gen) Keto acid)-recorded, Ti(MPD)(THD)[methylglutaric acid) (bistetradecylheptanedionate) titanium, and monoamine guanidine. Further, at the top surface 44 of the separation region D, preferably, the closer to the outer edge portion of the turntable 2 in the rotation direction of the separation gas nozzles 41, 42 is, the more the width of the rotation direction is. Big. The reason is that the flow from the upstream side to the separation zone D domain D due to the rotation of the turntable 2 is faster as it approaches the outer edge. From this point of view, it is a good idea to form the convex portion 4 by a fan shape as described above. Then, as in the separation gas nozzle 41 shown in FIGS. 19A and 19B, the first top surface 44' having a narrow space formed on both sides of the separation gas nozzle 41 (42) is, for example, a wafer W having a diameter of 300 mm. In the case of the substrate to be processed, the width dimension L of the portion where the center WO of the wafer W passes in the direction of rotation of the turntable 2 is 50 mm or more, which is better than 46 201025480. In order to effectively prevent the reaction carcass from invading from below the convex portion 4 to the lower side of the convex portion 4 (narrow space), when the width dimension L is too short, the first top surface 44 between the turntables 2 must be correspondingly reduced. The distance h. Further, when the distance h between the first top surface 44 and the turntable 2 is set to a certain size, the farther from the center of rotation of the turntable 2, the faster the speed of the turntable 2 is, so the more away from the center of rotation Far, the width dimension L required to obtain the effect of preventing the intrusion of the reaction gas is longer. According to the foregoing point of view, when the width dimension L of the passing portion of the center W of the wafer W is less than 5 mm, it is necessary to considerably reduce the moment h between the first top surface 44 and the turntable 2, Therefore, when the rotary opening 2 is rotated, it takes an effort to actively suppress the vibration of the turntable 2 to prevent the turntable 2 or the wafer w from striking the top surface 44. Further, the higher the rotational speed of the turntable = the more easily the reaction gas enters from the upstream side of the convex portion 4 to the lower side of the convex portion 4, so when the width dimension L is less than 50 mm, it is necessary Reducing the speed of the turntable 2 is not a good idea from the point of view of the production. Therefore, the width L is 50 mm or more, and the effect of the present invention cannot be obtained if it is not more than 50 mm. That is, it is more preferable that the width dimension L is 1/1 〇 to 1/1 of the diameter of the wafer W, preferably about 1/6 or more. Further, in the undivided separation gas supply mechanism, the lower top surface 44 located on both sides in the rotation direction is required, but the configuration is not limited to the configuration in which the convex portions 4 are provided on both sides of the separation gas nozzles 41 and 42. As shown in FIG. 20, a flow chamber 47 for separating gas is formed inside the convex portion 4 in the radial direction of the turntable 2, and a plurality of gas discharges are formed through the bottom of the flow chamber 47 at a length of 47 201025480. The structure of the hole 40. The top surface 44 of the separation region D is not limited to a flat surface, and may have a concave shape as shown in FIG. 21A, a 13⁄4 surface shape as shown in FIG. 21B, or a wavy structure as shown in FIG. 21C. . The heating means for heating the wafer w is not limited to a heater using a resistance heating element, and a lamp heating device may be used instead of the lower side of the turntable 2, or may be provided on the upper side of the turntable 2 Or set on the upper and lower sides. Further, if the reaction gas system is subjected to a reaction at a low temperature (e.g., normal temperature), it is not necessary to provide the heating means. Here, other examples of the arrangement modes of the processing regions 91 and 92 and the separation region 除了 other than the above-described embodiments will be described. Fig. 22 shows an example in which the second reaction gas nozzle 32 is disposed on the upstream side in the rotation direction of the turntable 2 of the transfer port 15, and the same effect can be obtained by the above arrangement. Further, it has been described that the separation region D may be a structure in which the fan-shaped convex portion 4 is divided into two portions in the circumferential direction and the separation gas nozzle 41 (42) is provided at the intermediate portion thereof, and Figure 23 is a top plan view of one example of this structure. In this case, the distance between the fan-shaped convex portion 4 and the separation gas nozzle 41 (42) and the size of the fan-shaped convex portion 4 are set in consideration of the discharge flow rate of the separation gas and the discharge flow rate of the reaction gas. The size that enables the separation region D to effectively exert its separation action. In the above embodiment, the first processing region 91 and the second portion
4S 201025480 理區域92係相當於具有較該分離區域D之頂面更高的 頂面之區域，於本發明中’第1處理區域91及第2處 理區域92令至少任一者亦可為具備有與例如分離區域 D之第1頂面44相同高度的頂面之結構，該結構與分 離區域D相同地係在反應氣體供給機構之該迴轉方向 兩側處’面向該迴轉台2而设置有能在其與該迴轉台2 之間形成用以阻止氣體侵入的空間且具有較該分離區 域D之該迴轉方向兩侧的頂面（第2頂面45)更低之頂 面。圖24係顯示此結構之一範例’第2處理區域(本範 例係吸附〇3氣體的區域)92中，於扇型凸狀部4之下方 側設置有第2反應氣體喷嘴32。另外，除了取代分離 氣體喷嘴41(42)而設置有第2反應氣體噴嘴32之外， 該第2處理區域92之結構與分離區域D完全相同。 本發明雖需要設置有於分離氣體噴嘴41(42)兩側 形成狹P益空間用的較低頂面（第1頂面）44，但亦可為如 圖25所示’在反應氣體喷嘴31(32)兩側亦同樣地設置 有較低頂面，並使得該等頂面連續形成，即，除了設置 有分離氣體喷嘴41(42)及反應氣體喷嘴31(32)以外的部 位’於面向迴轉台2之區域全面設置有凸狀部4的結構 亦可獲得同樣的效果。以不同角度觀察，該結構係將分 離氣體喷嘴41(42)兩侧的第1頂面44延伸擴展至反應 氣體喷嘴31(32)處的範例。此時’分離氣體係擴散至分 離氣體喷嘴41(42)的兩侧，而反應氣體係擴散至反應氣 體喷嘴31(32)的兩側，兩氣體會於凸狀部4下方侧(狹 49 201025480 隘空間）處匯流，且該等氣體會從位於分離氣體喷嘴 42(41)與反應氣體喷嘴31(32)之間的排氣口 61(62)處排 出。 以上實施形態中，迴轉台2之迴轉軸22係位於真 空容器1之中心部，並以分離氣體來沖洗該迴轉台2中 心部與真空容器1上面部之間的空間，但本發明亦可為 如圖26所示之結構。圖26之成膜裝置中，真空容器1 之中央區域的底面部14係朝下方侧突出形成有驅動部 之收納空間100，同時於真空容器】之中央區域的上方⑮ 面形成有凹部l〇〇a，於真空容器i之中心部處之收納空 間100的底部與真空容器i的該凹部1〇〇a上方面之間 則介設有支柱101，以防止來自第丨反應氣體喷嘴31 的BTBAS氣體與來自第2反應氣體喷嘴32之〇3氣體 透過該中心部而相互混合。 關於旋轉該迴轉台2之機構，係圍繞該支柱1〇1設 置有迴轉套筒102並沿該迴轉套筒1〇2而設置有環狀之 迴轉台2。 ❹ 接著’設置有可藉由該收納空間100内的馬達103 來進行驅動的驅動齒輪部1〇4，藉由該驅動齒輪部 1〇4’並透過形成於迴轉套筒1〇2之下部外周緣的齒輪 部105來旋轉該迴轉套筒102。符號106、107及108 係轴承部。又，於該收納空間100之底部連接有沖洗氣 體供給f 74，同時於真mi 1之上部連接有沖洗氣 體供給管75而用以將沖洗氣體供給至該凹部100a侧面 50 201025480 與迴轉套筒102上端部之間的空間内。圖％雖僅於 右2處繪出有用以將沖洗氣體供給至於該凹部1〇如 面與迴轉套筒102上端部之間的空間之開口部，但二: 地，應考慮並設計開口部（沖洗氣體供給口）之排列^數 以使付BTBAS氣體與〇3氣體不會經由迴轉套筒I。〕 附近區域而相互混合。 圖26之實施形態中’從迴轉台2侧觀之，該凹部 100a的侧面與迴轉套筒102的上端部之間的空間係相 當於分離氣體喷出孔，然後，藉由該分離氣體喷出孔、 迴轉套筒102及支柱ιοί來構成位於該真空容器丨之中 心部的中心部區域。 本發明並非限定於使用2種反應氣體，亦可適用於 將3種以上之反應氣體依序供給至基板上的情況。此 時，例如沿真空容器1之圓周方向依序設置有第丄反應 氣體喷嘴、分離氣體喷嘴、第2反應氣體喷嘴、分離氣 體喷嘴、第3反應氣體喷嘴及分離氣體喷嘴等各氣體喷 嘴，且將包含有各分離氣體喷嘴之分離區域由前述實施 形態般來構成即可。此時，係於各自連接至供給有該等 氣體之處理區域處設置有排氣通道與壓力計、閥門，並 如刖述般地針對各處理區域進行排氣流量（閥門前後之 壓力差）之調整。 關於使用了前述成膜裴置之基板處理裝置則如圖 27所示。圖27中，符號111係可收納例如乃片晶圓w 而被稱作晶圓盒的密閉型搬送容器，符號ιι2係設置有 51 201025480 ，，手臂113的大氣搬送室，符號iH、115係可於大 ，氣氛與真空氣氛之間進行氣氛切換的加載互鎖室（真 備室）’符號116係設置有雙臂式搬送手臂117的 真空侧搬送室’符號118、119係本發明之成膜 從外部將搬送容器m搬送至具備有载置台（圖^未顯 了）的搬入搬出埠，並使其連接至大氣搬送室112後·， 藉，圖中未顯示之開閉機構來將蓋體打開並藉由搬送 手臂113從該搬送容器1 η内將晶圓w取出。其次， ，其搬入至加載互鎖室114(115)内，並使該室内2二氣 氣氛切換成真空氣氛，然後藉由搬送手臂117來將晶圓 W取出並搬入至成膜裝置118、119中任一者内:進 行前述之成膜處理。如前述，藉由具備有複數台（例如2 台）例如5片處理用的本發明之成臈裝置，便 地實施所謂之ALDCMLD；)。 例中，為了使真空容器Μ料反應氣體 之―疋化’係調整各自介設於排氣通道心、㈣ 的闕門65a、65b之間口兹择榮 . 、s、m ““ 度等’以使得流通於兩排氣 通道63a、63b_排氣氣體之流量比 差。此時，關於具體之成膜裝置與成 =fn述圖28〜圖31進行說明。另外 =圖相同之構成部位則職予相同之符號並省略其 本範例中，如圖28所示，各自設置於排氣通道 52 201025480 63a、63b的第1處理壓力檢測機構66a及第2處理壓力 檢測機構66b係各自用以量測第1處理區域91及第2 處理區域92的壓力。另外’本範例中’亦可無需於排 氣通道63a、63b各自設置有第1壓力檢測機構67a及 第2壓力檢測機構67b。 又，如圖29所示，取代前述之氣體流量比卩，將 該等處理區域91、92所容許的壓力差Δρ依各製程條件 記憶於記憶體82。亦即，當真空容器1内之各處理區 域91、92之間的壓力差Δρ較大時，反應氣體便會有經 由該等處理區域91 ' 92之間的分離區域D而從壓力較 高的區域流向壓力較低的區域之傾向，有時亦會使氣流 不穩定，故本實施形態係藉由抑制各處理區域91、92 之間的壓力差Αρ來使得氣流穩定化。 本實施形態中，將氣流穩定化時，係與前述範例相 同，如圖30所示，於步驟S13中在開始供給反應氣體 之前，係使用氮氣來調整各閥門65a、65b之開口程度。 關於使該氣流穩定化的方法與處理條件等，便參考圖 31來說明其與前述第1實施形態之相異點，步驟S22 係將壓力設定值P1以及各處理區域91、92之間的壓力 差Δρ之設定值Δρί各自設定為例如1〇67Pa(8T〇rr)及 13.3Pa(0.1Torr)。接著，於步驟S24中，調整閥門65a 之開口程度以使得真空容器1内之處理壓力（例如處理 壓力檢測機構66a的壓力檢測值)達到設定值pl之後， 於步驟S25中，讀取處理壓力檢測機構6如、6仍的量 53 201025480 測結果以判斷壓力差Ap是否在設定值Δρί以下。當壓 力差Δρ在設定值Αρ1以下之情況，便前進至步驟Sl4 之薄膜成膜處理，當壓力差Δρ較設定值Δρί更大之情 況’則調整閥門65b之開口程度’以使得壓力差Αρ達 到設定值Δρί以下（步驟s26)。接著，在處理壓力達到 設定值P1之情況，便開始進行薄膜之成膜處理（步驟 S27)，如處理壓力未達到設定值ρι之情況，便與前述 範例相同地反覆進行步驟s24〜步驟S27的製程，直到 超過反覆時限tl(步驟S28)為止’抑或直到於步驟S25❹ 中之該壓力差Δρ達到設定值Δρ1以下，或於步驟S27 中之該處理壓力達到設定值為止。 然後’從氮氣切換成反應氣體並進行成膜處理，但 由於經前述步驟S21〜S28而使得各處理區域91、92 之間的壓力差Δρ係達到設定值Δρ1以下，抑或使其穩 定地落在非常接近該設定值Δρ1的數值，故能讓真空容 器1内之反應氣體(BATAS氣體、A氣體）的氣流呈穩定 化。因此’能讓晶圓W上之BTBAS氣體的吸附狀態穩© 疋化，同時能使得藉由〇3氣體來進行之吸附分子的氧 化反應亦穩定化，其結果便可於晶圓W面内及面之間 處獲得膜厚均勻而膜質均勻且良好的薄膜。再者，因可 防止分離區域D兩側的排氣偏差，故能避免BTBAS氣 體與〇3氣體經由分離區域D而相互混合。因此，能抑 制於晶圓W表面以外處產生反應生成物，故可抑制微 粒的產生。又再者，由於可縮小並抑制各處理區域91、 54 201025480 92間的壓力差Δρ ’故當例如因迴轉台2之迴轉而使得 晶圓W進入至處理區域91(92)時，抑或使其自處理區 域91(92)離開時，晶圓w幾乎不會受到來自迴轉台2 之上昇浮力。 因此，能抑制晶圓W從凹部24處浮起或於凹部24 内發生位置偏移等問題，故便可抑制例如晶圓W撞擊 至頂板11或成膜狀態不佳等。 又，即使於例如因流通各反應氣體之區域（處理區 域91、92)的大小差異或因形成於迴轉台2之凹部24 等的影響’而使得各處理區域91、92之間產生了氣體 流動難易度(傳導性)之差異的情況，由於縮小了處理區 域91、92之間的壓力差，因此可抑制前述般氣體流 動之傳導性差異的影響而確實地使氣流穩定化。 前述範例中’在測量各處理區域9卜92的壓力時， 係於排氣通道63a、63b處各自介設有處理壓力檢測機 構66a、66b，但亦可設置在各自連通至處理區域％、 92的區域處(例如真空容器丨之側壁）。又，在調整各處 理區域91、92之壓力時，如前述般地，可於調整閥門 65a、65b之開口程度的同時亦調整真空泵64之轉速r。 再者，亦可使得兩真空泵64a、64b形成共通化。又再 者，前述步驟S24中，將真空容器j内之處理壓力設定 為壓力設定值Η時，係使用處理壓力檢測機構66a的 壓力仏測值來作為該處理壓力，但亦可使用處理壓力檢 測機構66b的壓力檢測值，抑或可於真空容器丨内額外 55 201025480 =置檢測壓力用的檢測機構，並使用該檢測機構的檢測 a. π ，.將氣流穩定化時，係調整 的;取代調整排氣氣體之流量比F 整處理區域^二體之流量比F的同時亦調 二反2生壓力變動之可能性較高的情況，在例如‘ 翁七姑虱體供給至真空容器1内時(步驟S14中，從J 1刀、至反應氣體時)係調整各處理區域91、92厭 容L而待㈣騎朗處理並㈣特定時間而使得真空 ::壓力穩定化後’再調整排氣氣體之流量心 b時，可使得真空容器i内之氣流更加穩定化， 可抑制晶圓W的浮起。 (第3實施形態） 依下述本發明之實施形態，在具備有迴轉台的真空 容器内，係沿迴轉方向分離地形成供給有第1反應氣體 的第1處理區域與供給有第2反應氣體的第2處理區 域，在該等區域之間介設有用以從分離氣體供給機構供 給分離氣體的分離區域，同時沿迴轉方向旋轉設置有複 數個基板的迴轉台，藉由第1反應氣體及第2反應氣體 來層積出反應生成物層以形成薄膜。 然後，進行前述製程時’係透過從該迴轉台之迴轉 中心觀之’該排氣口係位在該第1處理區域與鄰接於迴 56 201025480 轉方向下游側(相對該第1處理區域）的分離區域之間的 第1排氣通道、以及從該迴轉台之迴轉中心觀之’該排 氣口係位在該第2處理區域與鄰接於迴轉方向下游側 (相對於該第2處理區域)的分離區域之間的第2排氣通 道之各排氣口來進行真空排氣’同時其排氣系統(排 氣通道、壓力控制機器及真空排氣機構）係相互獨立 化，因此苐1反應氣體與第2反應氣體不會有於排氣系 統中相互混合之慮，故於排氣系統便無產生反應生成物 〇 之虞(抑或產生量非常少）。 又，藉由設置有位於分離氣體供給機構之該迴轉方 向兩側、且用來與迴轉台之間形成可讓分離氣體從該分 離區域流向處理區域侧之狹隘空間的頂面’以阻止該反 應氣體侵入至分離區域’並由為了分離第1處理區域與 第2處理區域之間的氣氛而位於真空容器内的中心 部、且形成有使分離氣體朝向迴轉台的基板載置面側喷 出之喷出孔的中心部區域朝向迴轉台周緣喷出分離氣 ® 體。其緒果便可防止5亥相異的反應氣體經由該中心部區 域而相互混合，可進行良好之成膜處理，同時完全不會 產生反應生成物(抑或積極抑制），故可抑制微粒之產生。 本發明實施形態的成膜裝置如圖32(沿圖34中14, 線之剖面圖）所示，係具備有俯視形狀概略為圓形的扁 平狀真空各器201、以及設置於該真空容器2〇1内且其 迴轉中心係位於該真空容器2〇1之中心處的迴轉/台 202。真空容器201係頂板211可由容器本體212分離 57 201025480 的了，。藉由其内部之減壓狀態，頂板211係透過安裝 在5亥谷器本體212上方面的密封組件(例如Ο型環213) 而朝向本體212侧推壓以維持氣密狀態。欲自容器 本體212處將頂板211分離時，則係藉由圖中未顯示的 驅動機構來朝上方抬起。 迴轉台202係以中心部被固定在圓筒形狀的軸心 ^ 221上，該軸心部221係被固定於朝鉛直方向延伸的 迴轉轴222之上端部。迴轉軸222係、貫通真空容器洲 之底面°卩214 ’且其下端部係安裝在能使該迴轉轴222 ❿ 繞錯直軸旋轉(本範例係順時鐘方向）的驅動冑223上。 迴轉軸222及驅動部223係被收納在上方面具有開口纪 筒狀殼體220 0。該殼體22〇係以上方面所設置的法蘭 部分氣密地安裝在真空容器2〇1之底面部214的下方 面’t以使得殼體220之内部氣氛與外部氣氛係維持氣凌 狀0 、付口 - 叫邱你莰置有能如圖33及圖344S 201025480 The correction area 92 corresponds to a region having a top surface higher than the top surface of the separation region D. In the present invention, the first processing region 91 and the second processing region 92 may be provided with at least one of them. There is a structure having a top surface having the same height as the first top surface 44 of the separation region D, and the structure is provided to the turntable 2 at both sides of the reaction gas supply mechanism in the rotation direction, similarly to the separation region D. A space for preventing gas intrusion can be formed between the table and the turntable 2, and a top surface lower than the top surface (second top surface 45) of the separation region D on both sides in the rotation direction can be formed. Fig. 24 shows an example of the structure. The second processing region (the region in which the gas is adsorbed by the gas) 92 is provided with a second reaction gas nozzle 32 on the lower side of the fan-shaped convex portion 4. Further, the second processing region 92 has the same configuration as the separation region D except that the second reaction gas nozzle 32 is provided instead of the separation gas nozzle 41 (42). In the present invention, it is necessary to provide a lower top surface (first top surface) 44 for forming a narrow P-space on both sides of the separation gas nozzle 41 (42), but it may also be as shown in FIG. (32) The lower top surfaces are also provided on both sides in the same manner, and the top surfaces are continuously formed, that is, the portions other than the separation gas nozzle 41 (42) and the reaction gas nozzle 31 (32) are provided The same effect can be obtained by the structure in which the convex portion 4 is provided in the entire area of the turntable 2. Viewed from different angles, the structure extends the first top surface 44 on either side of the gas nozzle 41 (42) to the example of the reaction gas nozzle 31 (32). At this time, the 'separation gas system diffuses to both sides of the separation gas nozzle 41 (42), and the reaction gas system diffuses to both sides of the reaction gas nozzle 31 (32), and the two gases will flow on the lower side of the convex portion 4 (narrow 49 201025480) The helium space is merged, and the gases are discharged from the exhaust port 61 (62) between the separation gas nozzle 42 (41) and the reaction gas nozzle 31 (32). In the above embodiment, the rotary shaft 22 of the turntable 2 is located at the center of the vacuum vessel 1, and the space between the center portion of the turntable 2 and the upper surface of the vacuum vessel 1 is flushed by the separated gas. However, the present invention may also be The structure shown in FIG. In the film forming apparatus of Fig. 26, the bottom surface portion 14 of the central portion of the vacuum chamber 1 is formed with a housing portion 100 in which the driving portion is formed downward, and a concave portion is formed on the upper surface 15 of the central portion of the vacuum container. a, a pillar 101 is interposed between the bottom of the storage space 100 at the center portion of the vacuum vessel i and the recess 1a of the vacuum vessel i to prevent the BTBAS gas from the second reaction gas nozzle 31 The 〇3 gas from the second reaction gas nozzle 32 passes through the center portion and is mixed with each other. Regarding the mechanism for rotating the turntable 2, a swivel sleeve 102 is disposed around the strut 1〇1, and an annular turntable 2 is provided along the swivel sleeve 1〇2. ❹ Next, a drive gear unit 1〇4 that can be driven by the motor 103 in the storage space 100 is provided, and the drive gear unit 1〇4′ is transmitted through the outer periphery of the lower portion of the rotary sleeve 1〇2. The gear portion 105 of the edge rotates the rotary sleeve 102. Symbols 106, 107 and 108 are bearing parts. Further, a flushing gas supply f 74 is connected to the bottom of the storage space 100, and a flushing gas supply pipe 75 is connected to the upper portion of the true mi 1 for supplying flushing gas to the side surface 50 of the recess 100a 50 201025480 and the rotary sleeve 102 Inside the space between the upper ends. Although the figure % only draws the opening portion for supplying the flushing gas to the space between the concave portion 1 such as the surface and the upper end portion of the rotary sleeve 102 at the right 2, the ground portion should be considered and designed ( The arrangement of the flushing gas supply ports is such that the BTBAS gas and the helium gas do not pass through the rotary sleeve 1. 〕 Mixed areas in the vicinity. In the embodiment of Fig. 26, the space between the side surface of the concave portion 100a and the upper end portion of the rotary sleeve 102 corresponds to the separation gas ejection hole, and is then ejected by the separation gas. The hole, the swivel sleeve 102, and the strut ιοί constitute a central portion of the central portion of the vacuum vessel. The present invention is not limited to the use of two kinds of reaction gases, and may be applied to a case where three or more kinds of reaction gases are sequentially supplied to a substrate. At this time, for example, gas nozzles such as a second reaction gas nozzle, a separation gas nozzle, a second reaction gas nozzle, a separation gas nozzle, a third reaction gas nozzle, and a separation gas nozzle are sequentially provided in the circumferential direction of the vacuum chamber 1, and The separation region including the separation gas nozzles may be configured as in the above embodiment. At this time, the exhaust passage and the pressure gauge and the valve are provided at the respective treatment areas connected to the supply of the gases, and the exhaust flow rate (pressure difference before and after the valve) is performed for each treatment area as described above. Adjustment. The substrate processing apparatus using the above-described film forming apparatus is as shown in Fig. 27. In Fig. 27, reference numeral 111 denotes a sealed transfer container which is called a wafer cassette, and is called a wafer cassette. The symbol ιι 2 is provided with 51 201025480, the atmospheric transfer chamber of the arm 113, and the symbols iH and 115 are available. In the load lock chamber (true room) where the atmosphere is switched between the atmosphere and the vacuum atmosphere, the symbol 116 is provided with the vacuum side transfer chamber of the double-arm transfer arm 117. The symbols 118 and 119 are the film formation of the present invention. The transfer container m is transported to the loading/unloading cassette provided with the mounting table (not shown), and is connected to the atmospheric transfer chamber 112. The opening and closing mechanism (not shown) opens the lid. The wafer w is taken out from the transfer container 1 n by the transfer arm 113. Next, it is carried into the load lock chamber 114 (115), and the indoor 2 atmosphere is switched to a vacuum atmosphere, and then the wafer W is taken out by the transfer arm 117 and carried into the film forming apparatus 118, 119. In any of the above: the film forming treatment described above is carried out. As described above, the so-called ALDCMLD;) is suitably carried out by providing a plurality of (for example, two), for example, five-piece processing devices of the present invention. In the example, in order to adjust the vacuum gas of the vacuum vessel, the gas is adjusted between the tips of the exhaust passage, and the tips 65a and 65b of the (4), s, m, "degrees, etc." The flow ratio of the exhaust gas flowing through the two exhaust passages 63a, 63b_ is made to be poor. At this time, a specific film forming apparatus will be described with reference to Fig. 28 to Fig. 31. In addition, in the present embodiment, the same components are denoted by the same reference numerals, and the first processing pressure detecting means 66a and the second processing pressure which are provided in the exhaust passages 52 201025480 63a and 63b, respectively, are shown in Fig. 28 . The detecting means 66b is for measuring the pressure of the first processing region 91 and the second processing region 92, respectively. Further, in the present example, it is not necessary to provide the first pressure detecting means 67a and the second pressure detecting means 67b in each of the exhaust passages 63a, 63b. Further, as shown in Fig. 29, in place of the gas flow ratio 卩 described above, the pressure difference Δρ allowed in the processing regions 91 and 92 is stored in the memory 82 in accordance with the respective process conditions. That is, when the pressure difference Δρ between the processing regions 91, 92 in the vacuum vessel 1 is large, the reaction gas may have a higher pressure from the separation region D between the processing regions 91'92. The tendency of the region to flow to a region having a low pressure sometimes causes the airflow to be unstable. Therefore, in the present embodiment, the airflow is stabilized by suppressing the pressure difference Αρ between the respective processing regions 91 and 92. In the present embodiment, when the airflow is stabilized, as in the above-described example, as shown in Fig. 30, before the supply of the reaction gas is started in step S13, the degree of opening of each of the valves 65a, 65b is adjusted by using nitrogen gas. Regarding the method of stabilizing the gas flow, the processing conditions, and the like, the difference from the first embodiment will be described with reference to Fig. 31, and the pressure setting value P1 and the pressure between the processing regions 91 and 92 are set in step S22. The set value Δρί of the difference Δρ is set to, for example, 1〇67Pa (8T〇rr) and 13.3Pa (0.1Torr). Next, in step S24, the degree of opening of the valve 65a is adjusted such that the processing pressure in the vacuum vessel 1 (for example, the pressure detection value of the processing pressure detecting mechanism 66a) reaches the set value pl, and in step S25, the reading processing pressure is detected. The mechanism 6 determines the pressure difference Ap or below the set value Δρί. When the pressure difference Δρ is below the set value Αρ1, the process proceeds to the film forming process of step S14, and when the pressure difference Δρ is larger than the set value Δρί, the degree of opening of the valve 65b is adjusted so that the pressure difference Αρ is reached. The set value Δρί is below (step s26). Then, when the processing pressure reaches the set value P1, the film forming process of the film is started (step S27). If the process pressure does not reach the set value ρ, the steps s24 to S27 are repeatedly performed in the same manner as the above-described example. The process until the over time limit t1 (step S28) is exceeded or until the pressure difference Δρ in step S25❹ reaches the set value Δρ1 or less, or the process pressure in step S27 reaches the set value. Then, 'the gas is switched to the reaction gas and the film forming process is performed. However, the pressure difference Δρ between the respective processing regions 91 and 92 is equal to or lower than the set value Δρ1 by the above steps S21 to S28, or is stably caused to fall. Very close to the value of the set value Δρ1, the flow of the reaction gas (BATAS gas, A gas) in the vacuum vessel 1 can be stabilized. Therefore, 'the adsorption state of the BTBAS gas on the wafer W can be stabilized, and the oxidation reaction of the adsorbed molecules by the 〇3 gas can be stabilized, and the result can be in the surface of the wafer W and A film having a uniform film thickness and a uniform film quality and good film was obtained between the faces. Further, since the exhaust gas deviation on both sides of the separation region D can be prevented, it is possible to prevent the BTBAS gas and the helium gas from being mixed with each other via the separation region D. Therefore, it is possible to suppress generation of a reaction product outside the surface of the wafer W, so that generation of fine particles can be suppressed. Further, since the pressure difference Δρ' between the respective processing regions 91, 54 201025480 92 can be reduced and suppressed, for example, when the wafer W enters the processing region 91 (92) due to the rotation of the turntable 2, or When the processing region 91 (92) leaves, the wafer w hardly receives the buoyancy from the turntable 2. Therefore, it is possible to suppress problems such as floating of the wafer W from the concave portion 24 or positional displacement in the concave portion 24, and it is possible to suppress, for example, the wafer W from hitting the top plate 11 or the film forming state being poor. Further, even if, for example, a difference in the size of the region (processing regions 91, 92) through which the respective reaction gases flow or the influence of the concave portion 24 formed on the turntable 2 or the like is caused, gas flow occurs between the respective processing regions 91, 92. In the case of the difference in the degree of difficulty (conductivity), since the pressure difference between the processing regions 91 and 92 is reduced, the influence of the difference in conductivity of the gas flow as described above can be suppressed, and the gas flow can be surely stabilized. In the foregoing example, when the pressure of each of the processing regions 9 and 92 is measured, the processing pressure detecting mechanisms 66a and 66b are respectively disposed at the exhaust passages 63a and 63b, but may be disposed to communicate with the processing regions %, 92, respectively. The area (such as the side wall of the vacuum container). Further, when the pressures of the respective regions 91, 92 are adjusted, as described above, the rotational speed r of the vacuum pump 64 can be adjusted while adjusting the degree of opening of the valves 65a, 65b. Furthermore, the two vacuum pumps 64a, 64b can also be made common. Further, in the above step S24, when the processing pressure in the vacuum container j is set to the pressure setting value ,, the pressure measurement value of the processing pressure detecting means 66a is used as the processing pressure, but the processing pressure detection may be used. The pressure detection value of the mechanism 66b, or may be additional 55 in the vacuum container 2010 201025480 = detection mechanism for detecting the pressure, and using the detection mechanism of the detection mechanism a. π, when the airflow is stabilized, the adjustment is made; When the flow rate of the exhaust gas is higher than the flow rate ratio F of the F-processed area, the possibility of a change in the pressure of the second and second raw materials is also high, for example, when the body of the Wengqigu is supplied into the vacuum vessel 1. (In step S14, from the J 1 knife to the reaction gas), the respective processing regions 91, 92 are adjusted to be L-tolerant, and (4) the chiro-processing and (iv) the specific time to make the vacuum:: the pressure is stabilized, and then the exhaust gas is re-adjusted. When the flow rate of the gas is b, the flow in the vacuum container i can be further stabilized, and the floating of the wafer W can be suppressed. (Third Embodiment) According to the embodiment of the present invention, in the vacuum container including the turntable, the first processing region to which the first reaction gas is supplied and the second reaction gas are supplied are separated in the rotation direction. In the second processing region, a separation region for supplying the separation gas from the separation gas supply mechanism is interposed between the regions, and a rotary table provided with a plurality of substrates is rotated in the rotation direction, and the first reaction gas and the first reaction gas 2 a reaction gas to laminate a reaction product layer to form a film. Then, when the process is performed, 'the passage is viewed from the center of rotation of the turntable'. The exhaust port is located in the first processing region and adjacent to the downstream side of the return 56 201025480 (relative to the first processing region). The first exhaust passage between the separation regions and the view from the center of rotation of the turntable are located in the second processing region and adjacent to the downstream side in the rotation direction (relative to the second processing region) The exhaust ports of the second exhaust passage between the separation zones are vacuum exhausted, and the exhaust system (exhaust passage, pressure control device, and vacuum exhaust mechanism) are independent of each other, so the 苐1 reaction Since the gas and the second reaction gas do not mix with each other in the exhaust system, there is no reaction product (or a very small amount of production) in the exhaust system. Further, by providing a top surface of the narrow space in the direction of the rotation of the separation gas supply mechanism and for forming a narrow space between the rotary table and the separation gas from the separation region to the treatment region side to prevent the reaction The gas intrudes into the separation region ′ and is located in the center portion of the vacuum container in order to separate the atmosphere between the first processing region and the second processing region, and is formed to discharge the separation gas toward the substrate mounting surface side of the turntable. The center portion of the discharge port ejects the separation gas body toward the periphery of the turntable. In other words, it is possible to prevent the reaction gases of 5 angstroms from being mixed with each other through the central portion, and it is possible to perform a good film formation process, and at the same time, no reaction product (or positive suppression) is generated at all, so that generation of particles can be suppressed. . As shown in FIG. 32 (a cross-sectional view taken along line 14 in FIG. 34), the film forming apparatus according to the embodiment of the present invention includes a flat vacuum unit 201 having a circular shape in plan view, and a vacuum container 2 provided in the vacuum container 2. The swivel/stage 202 is located in the center of the vacuum vessel 2〇1. The vacuum vessel 201 is a top plate 211 that can be separated by the container body 212 57 201025480. The top plate 211 is urged toward the body 212 side by a seal member (e.g., the Ο-shaped ring 213) mounted on the fifth hood body 212 to maintain the airtight state by the internal pressure reduction state. When the top plate 211 is to be separated from the container body 212, it is lifted upward by a drive mechanism not shown. The turntable 202 is fixed to a cylindrical axial center 221 at a central portion thereof, and the axial portion 221 is fixed to an upper end portion of the rotary shaft 222 extending in the vertical direction. The rotary shaft 222 extends through the bottom surface 卩 214 ′ of the vacuum vessel, and the lower end portion thereof is attached to a drive bore 223 that can rotate the rotary shaft 222 about the wrong axis (clockwise direction in this example). The rotary shaft 222 and the drive unit 223 are provided with an open cylindrical casing 220 0 in the upper direction. The flange portion of the casing 22 which is provided in the above aspect is hermetically mounted on the lower surface 214 of the bottom surface portion 214 of the vacuum vessel 2〇1 so that the internal atmosphere of the casing 220 and the external atmosphere are maintained in a gas-like manner. , pay the mouth - called Qiu you can set up as shown in Figure 33 and Figure 34
示般地沿迴轉方向（圓周方向）载置複數片（例如 板（晶圓w)的圓形凹部224。另外，為了方便 中僅於1個凹部224處繪有晶gj w。此處之圖 35B係沿同心圓將迴轉台加切斷後橫向展開 圖，如圖35A所示，凹部故之直徑係較晶圓i 徑梢大(例如4mm)，又，其深度係設定為等同於曰; 之厚度的大小尺寸。因此當晶圓w置人凹, 晶圓W之表面與迴轉台2之表面（未錢有晶圓^ 58 201025480 域)會齊高。由於當晶圓w表面與迴轉台2〇2表面之間 的高度差過大會因該段差部分而產生壓力變動，因此就 能使膜厚之面内均勻性達到均勻之觀點，晶圓w表面 與迴轉台202表面之尚度齊高者較佳。所謂使得晶圓w 表面與迴轉台202表面之高度齊高係指使其為相同高 度抑或使該兩面之差距在5mm以内，較佳地應根據加 工精度盡可能地使該兩面之高度差接近於零。凹部224 之底面係形成有貫通孔（圖中未顯示），該貫通孔係供例 如後述之3根昇降銷貫穿而支撐晶圓w之内面來讓該 晶圓W進行昇降。 凹部224係用以定位晶圓W，使其不會因迴轉台 202之旋轉所產生的離心力而飛出，係相當於本發明之 基板載置區域’但是該基板載置區域（晶圓載置區域)非 限定為凹部，亦可為例如在迴轉台202表面處沿晶圓w 之圓周方向排列有複數個導引晶圓W之周緣部的導弓丨 組件’抑或於迴轉台202侧設置靜電夾持器等夾持器機 構來吸附晶圓w之情況’藉由該吸著而載置有晶圓w 的區域即為基板載置區域。 如圖33及圖34所示’真空容器201係在各自對向 於迴轉台202之凹部224所通過區域的上方位置處，> 真空容器201之圓周方向（迴轉台202之迴轉方向）相互 間隔地從中心部呈放射狀地延伸出有第1反應氣體嘴 嘴231、第2反應氣體喷嘴232以及2根分離氣體嘴嘴 241、242。該等反應氣體噴嘴231、232及分離氣體喷 59 201025480 嘴241、242係安裝在例如真空容器2〇1之側周壁處， 且其根端部的氣體導入埠23la、232a、Mb、242a係 貫穿該側壁。 圖示之範例中，該等反應氣體噴嘴231、232以 分離氣體噴嘴241、242係從真空容器2〇1之周壁立 入至真空容器201内，但亦可從後述之環狀突出邛導 導入。此時，可採用在突出部205之外周緣面 211之外表面處係設置具有開口的L型導管，於板 器201内部之L型導管的一侧開口係連接至^體=令 231(232、241、242)，而於真空容器2〇1外部之L q嘴 管的另側開口則連接至氣體導入埠231a(232a、2型導 242a)的結構。 4la、 1反應氣 反應氣體喷嘴231、232係各自連接至第 體(BTBAS ;二(特丁胺基)矽烷)之氣體供給源及第2 應氣體(〇3 ;臭氧)之氣體供給源（圖中皆未顯示、 反 氣體喷嘴241、242皆連接至分離氣體⑼2 ;氮氣 户 體供給源（圖中未顯示）。又，各反應氣體喷嘴2^丨 氣 亦連接至n2氣體之氣體供給源，而可在開舲播232 。！灯成膜 裝置時將作為壓力調節用氣體的Ν2氣體供給至各 區域200Ρ1、200Ρ2。本範例係以第2反應氣體嘴嘴 分離氣體喷嘴241、第1反應氣體喷嘴231及八魅^ ' 久刀離氣體 喷嘴242之順序繞順時鐘而排列設置。 反應氣體喷嘴231、232係沿該喷嘴之長度方向 間隔地排列設置有使反應氣體朝下方側噴出用μ三％ 川的氣體 201025480 喷出孔233。又，分離氣體喷嘴241、242係沿其長度 方向而間隔地貫穿設置有使分離氣體朝下方侧噴出用 的喷出孔240。反應氣體噴嘴23卜232各自相當於第1 反應氣體供給機構及第2反應氣體供給機構，而其下方 區域則各自成為讓BTBAS氣體吸附於晶圓W用的第1 處理區域200P1以及讓〇3氣體吸附於晶圓W用的第2 處理區域200P2。 〇 分離氣體喷嘴241、242係相當於供給N2氣體以形 成分離該第1處理區域200P1與第2處理區域200P2 之氣氛的分離區域200D用的分離氣體供給機構，該分 離區域200D中’真空容器201之頂板211如圖33〜圖 35B所示，係設置有朝下方突出之俯視形狀呈扇形的凸 狀部204 ’該凸狀部係以迴轉台202之迴轉中心為中心 且將沿著真空容器201之内周緣壁附近所描繪之圓於 圓周方向分割所形成的。分離氣體噴嘴241、242係收 © 納在該凸狀部204中以該圓之圓周方向中央朝該圓之 半徑方向延伸所形成的溝部243内。即，從分離氣體噴 嘴241、242之中心軸至凸狀部2〇4的扇型兩邊緣(迴轉 方向上游側邊緣及下游側邊緣）的距離係設定為相同長 度。 另外，於本實施形態中，溝部243係將凸狀部2〇4 —等分而形成的，但是於其他實施形態中，亦可形成例 如從溝部243觀之’該凸狀部2〇4於迴轉台2〇2之迴 方向上游侧係較該迴轉方向下游侧更為寬廣的溝部 201025480 243。 ㈡ΙΡϋ 八"哪軋體噴嘴241、242之唁圓届太a a :之較低頂面244(第1頂面；即該凸狀 狀部2。4之功能係形成二5=面)第= 應氣體侵入至其與迴轉”们二，體及第2反 體相互混合的狹P益空間（分離空間日)。’、’阻止料反應氣A plurality of sheets (for example, a circular recess 224 of a plate (wafer w) are placed in the direction of rotation (circumferential direction). In addition, for the sake of convenience, only one recess 224 is formed with crystal gj w. 35B is a transverse expansion view of the turntable along the concentric circle. As shown in FIG. 35A, the diameter of the concave portion is larger than the diameter of the wafer i (for example, 4 mm), and the depth is set to be equal to that of the crucible; The size of the thickness. Therefore, when the wafer w is concave, the surface of the wafer W and the surface of the turntable 2 (the unfinished wafer ^ 58 201025480 domain) will be high. Because when the wafer w surface and the turntable 2 The difference in height between the surfaces of the crucible 2 is excessively caused by the pressure fluctuation of the step portion, so that the uniformity of the in-plane thickness of the film thickness can be made uniform, and the surface of the wafer w and the surface of the turntable 202 are higher. Preferably, the height of the surface of the wafer w and the surface of the turntable 202 are such that they are at the same height or the difference between the two surfaces is within 5 mm, and the height difference between the two surfaces should preferably be as large as possible according to the processing precision. Close to zero. The bottom surface of the recess 224 is formed with a through hole (in the figure) In the through hole, for example, three lift pins which will be described later are inserted to support the inner surface of the wafer w to lift the wafer W. The concave portion 224 is used to position the wafer W so as not to be caused by the turntable 202. The centrifugal force generated by the rotation is equivalent to the substrate mounting region of the present invention. However, the substrate mounting region (wafer mounting region) is not limited to a concave portion, and may be, for example, crystallized at the surface of the rotary table 202. In the circumferential direction of the circle w, a plurality of guide members for guiding the peripheral portion of the wafer W are arranged, or a holder mechanism such as an electrostatic holder is disposed on the side of the turntable 202 to adsorb the wafer w. The region in which the wafer w is placed while being sucked is the substrate mounting region. As shown in FIGS. 33 and 34, the vacuum container 201 is positioned above the region through which the concave portion 224 of the turntable 202 passes. > The first reaction gas nozzle 231, the second reaction gas nozzle 232, and the two separation gas nozzles are radially extended from the center portion in the circumferential direction of the vacuum chamber 201 (the rotation direction of the turntable 202). 241, 242. The reaction gas spray Mouth 231, 232 and separation gas spray 59 201025480 The nozzles 241, 242 are attached to, for example, the side wall of the vacuum vessel 2〇1, and the gas introduction ports 23la, 232a, Mb, and 242a at the root end thereof penetrate the side wall. In the illustrated example, the reaction gas nozzles 231 and 232 are inserted into the vacuum vessel 201 from the peripheral wall of the vacuum vessel 2〇1 by the separation gas nozzles 241 and 242, but may be introduced from a ring-shaped projecting guide which will be described later. In the case of the outer surface of the outer peripheral surface 211 of the protruding portion 205, an L-shaped conduit having an opening may be disposed, and one side opening of the L-shaped conduit inside the plate 201 is connected to the body = 231 (232, 241, 242), and the other side opening of the Lq nozzle tube outside the vacuum vessel 2〇1 is connected to the structure of the gas introduction port 231a (232a, 2 type guide 242a). 4la, 1 reaction gas reaction gas nozzles 231, 232 are respectively connected to a gas supply source of a first body (BTBAS; bis(tert-butyl) decane) and a gas supply source of a second gas (〇3; ozone) (Fig. None of the gas nozzles 241, 242 are connected to the separation gas (9) 2; the nitrogen source supply source (not shown). Further, each reaction gas nozzle 2 is also connected to the gas supply source of the n2 gas. In the case of the lamp-forming device, the Ν2 gas as the gas for pressure adjustment can be supplied to the respective regions 200Ρ1 and 200Ρ2. In this example, the gas nozzle 241 and the first reaction gas are separated by the second reaction gas nozzle. The nozzles 231 and the eight knives are arranged in a clockwise manner from the gas nozzles 242. The reaction gas nozzles 231 and 232 are arranged at intervals along the longitudinal direction of the nozzles to discharge the reaction gas toward the lower side. In addition, the separation gas nozzles 241 and 242 are provided with discharge holes 240 for discharging the separation gas toward the lower side in the longitudinal direction of the separation gas nozzles 241 and 242. The reaction gas nozzles 23 and 232 are respectively disposed. In the first reaction gas supply means and the second reaction gas supply means, the lower region is used for the first processing region 200P1 for adsorbing the BTBAS gas to the wafer W and for adsorbing the 〇3 gas to the wafer W. The second processing region 200P2. The cesium separation gas nozzles 241 and 242 correspond to a separation gas supply mechanism for supplying the N2 gas to form the separation region 200D separating the atmosphere of the first processing region 200P1 and the second processing region 200P2. As shown in FIG. 33 to FIG. 35B, the top plate 211 of the vacuum container 201 in the 200D is provided with a convex portion 204 having a fan shape in a plan view protruding downward, and the convex portion is centered on the center of rotation of the turntable 202. The circle drawn along the circumference of the inner peripheral wall of the vacuum vessel 201 is formed by dividing the circle in the circumferential direction. The separation gas nozzles 241, 242 are received in the convex portion 204 in the circumferential direction of the circle toward the circle. The inside of the groove portion 243 formed in the radial direction, that is, the fan-shaped upstream edge and the downstream side edge from the central axis of the separation gas nozzles 241, 242 to the convex portion 2〇4 In the present embodiment, the groove portion 243 is formed by equally dividing the convex portion 2〇4, but in another embodiment, it may be formed, for example, from the groove portion 243. The convex portion 2〇4 is a groove portion 201025480 243 which is wider than the downstream side in the rotation direction on the upstream side in the return direction of the turntable 2〇2. (2) 八 八" Which of the rolling nozzles 241, 242 is too aa : the lower top surface 244 (the first top surface; that is, the function of the convex portion 2. 4 forms two 5 = surface) = the gas invades into the rotation and the second body A narrow P-interest space (separation space day) that is mixed with each other. ',' stop the reaction gas
迴轉Πο;:=嘴:1為例，其係能阻止來自 亦能阻止來自迴轉&氣體之侵入’又’ 所褶「阳乂：游侧的btbas氣體之侵入。 ° 軋钕入」係指從分離氣體噴嘴241所噴出 =離氣_2氣體)會擴散至第i頂面Μ J = 的第例中係吹出至鄰接於該第1頂面綱Rotary Πο;: = mouth: 1 as an example, which can prevent the intrusion from the gyro & gas from being plucked by the yaw of the yoke: the intrusion of the btbas gas on the swimming side. ° Rolling in The first example of the first top surface is blown out to the first top surface of the ith top surface Μ J = when the gas is ejected from the separation gas nozzle 241.
。然後’所謂「使得氣體無法侵入」並 僅“元全無法自鄰接空間進入凸狀部204下方側空 ί，亦指，多少仍會侵入，但是能保持於各自 則彳X人之〇3氣體及BTBAS氣體不會在凸狀部辦 互混合的狀態之情況，只要能達到前述作用便可 ，揮分離區域20GD之功能，即發揮分離第u理區域 〇pi之氣氛與第2處理區域2GGP2之氣氛的分離作 ^因此’該㈣空間之狹_程度係設定為能確保狹 ^空間（凸狀部204之下方空間）與鄰接於該空間之區域 62 201025480 5範例，第2頂面245之下方空_的壓力差可發 揮使件氣體無法侵入」之作用的大小尺寸，該旦體尺 寸會依凸狀部204之面積等而有所不同。又/當缺地， 吸附於晶圓W之氣體係能通過該分離區域2細内部， 所明之阻止氣體侵入係指氣相中的氣體。 另一方面，如圖36、圖38所示，沿該轴心部221 之外周緣而於頂板211之下方面設置有突出部2〇5以使 〇 S面向該迴轉台2G2之位於軸心部221外周緣侧的部 位。如圖36所示，該突出部205係與凸狀部2〇4之位 於迴轉台202迴轉中心侧的部位連續形成，且其下方面 形成為與凸狀部204下方面（頂面244)相同的^度。圖 33及圖34係從較該頂面245更低且較分離氣體喷嘴 241、242更鬲的位置處將頂板211沿水平切斷的圖式。 另外’突出部205與凸狀部204並未限定一定要形成一 體，亦可為各別之個體。 關於凸狀部204及分離氣體噴嘴241(242)之組合結 ® 構的製作方法，並非限定為在作為凸狀部204的1片扇 型板的中央處形成溝部243，再於該溝部243内設置分 離氣體喷嘴241(242)的結構，亦可為使用2片扇型板並 藉由螺絲鎖固等方式將其固定在頂板本體下方面之分 離氣體喷嘴241(242)兩侧位置處的結構。 本範例中，分離氣體喷嘴241(242)係沿該喷嘴之長 度方向以例如10mm的間隔而排列設置有面向正下方 之例如孔徑為0.5mm的喷出孔。又，第1反應氣體噴 63 201025480 嘴f1係沿該嘴嘴之長度方向以例如10 m m的間隔而排 列设置^面向正下方之例如孔徑為G.5mm的喷出孔。 本範例中，係以直徑3〇〇mm的晶圓w作為被處理 基板則此時凸狀部204在位於距迴轉中心例如14〇mm 的部位(與後述突出部5之邊界部位)處，其圓周方向之 長度(迴轉台202之同心圓的圓弧長度)為例如146mm， 而在位於晶圓W載置區域（凹部224)之最外侧的部位 處’其圓周方向之長度為例如502mm。另外，如圖35A 所示於省外侧部位處，各自位在分離氣體喷嘴241(242)❹ 之左右兩側位置的凸狀部2〇4之圓周方向的長度為L， 則長度L為246ηιπι。 又，如圖35Β所示，凸狀部2〇4之下方面（即頂面 244)距迴轉台202表面之高度h可為例如05min至 10顏，以約4mm者較佳。此時，迴轉台2〇2之轉速係 設定為例如lrpm〜500rpm<)為了確保分離區域2〇〇D之 分離機能，係對應迴轉台202轉速的使用範圍等再根據 例如實驗等來設定該凸狀部204的大小以及凸狀部2〇4❹ 下方面（第1頂面244)與迴轉台202表面之間的高度h。 另外，作為s亥分離氣體並非限定於N2而亦可使用Ar等 非活性氣體等，但並非限定於非活性氣體而亦可使用氫 氣等，只要是不會影響成膜處理的氣體，對於氣體之種 類並無特別限制。 真空谷器201之頂板211的下方面（即，從迴轉台 202之晶圓载置區域（凹部224)所見之頂面）如前述般地 64 201025480 〇 係沿圓周方向而具有第1頂面244以及高度較該頂面 244更高的第2頂面245 ’圖32係設置有較高頂面245 之區威的縱剖面圖’圖36係設置有較低頂面244之區 域的縱剖面圖。扇型凸狀部204之周緣部（真空容器201 之外緣側部位)如圖33及圖36所示，係形成有面向迴 轉台202之外端面而彎曲呈L型的彎曲部246。扇型之 凸狀部204係設置於頂板211侧，且由於可自容器本體 212處取下，因此在該迴轉台202的外端面與彎曲部206 的内周緣面之間、以及在彎曲部246的外周緣面斑容哭 本體212的内周緣面之間係具有微小之間隙。此處，與 凸狀部204相同地，該彎曲部246係預防反應氣體自兩 側侵入以防止兩反應氣體相互混合為目的而設置的，彎 曲部246内周緣面與迴轉台2〇2外端面之間的間隙，係 設定為例如與面向迴轉台2〇2纟面之頂面2料的高产匕 相同=即，本範例中，從迴轉台2〇2之表面側區‘ 之’考曲部246之内周緣面係構成了真 周緣壁。 令益<円 於分離區域2〇〇〇處，容器本體212之 圖36所示，係接近至該f4=二二 為垂直面，但是於分離區域2_以外的卜^面;^成 所示，從例如面向迴轉” a邻位’如圖32 部2U而切割成縱剖:形狀為矩形之朝 =至底面 構造。於該凹陷部位處，a 卜方側凹的 则内周緣壁之間的間瞻自連通;= 65 201025480 200P1及第2處理區域200P2 ’而可將供給至各處理區 域200P卜200P2的反應氣體排出之結構。該等間隙係 各自稱作第1排氣區域200E1及第2排氣區域200E2， 於第1排氣區域200E1及第2排氣區域200E2之底部（亦 即’迴轉台2Ό2之下方侧）如圖32及圖34所示，係各 自形成有第1排氣口 261及第2排氣口 262。 如圖40所示，例如以俯視觀察時，該等排氣口 261、262係設置於該分離區域200D(凸狀部204)之該迴 轉方向兩侧’專門用來進行各反應氣體(BTBAS氣體及 © 〇3氣體）的排氣以讓分離區域D能確實發揮其分離作 用。本範例中，一侧之排氣口 261係設置在第丨反應氣 體喷嘴231以及鄰接於該迴轉方向下游側(相對於該反 應氣體喷嘴231)的分離區域200D之間處，又，另側之 排氣口 262係設置在第2反應氣體喷嘴232以及鄰接於 該迴轉方向下游側（相對於該反應氣體喷嘴232)的分離 區域200D之間處。 換言之，如圖34所示，從迴轉台2〇2之迴轉中心❹ 觀之，第1排氣通道263a之排氣口 261係位在第】處 理區域200P1以及相對該區域2〇〇pl而鄰接於例如迴轉 台202之迴轉方向下游側的分離區域2〇〇D(圖％中係 相當於設置有分離氣體噴嘴242的凸狀部2〇4所覆蓋之 區域)之間處。亦即’係位在圖34中一點鏈線所示的迴 轉台202中心與第1處理區域2〇〇ρι所連通之直線 以及迴轉台202中心與鄰接於該第i處理區域2〇〇ρι下 66 201025480 游側之分離區域200D的上游側邊緣所連通的直線L2 之間處。又，從該迴轉中心觀之，第2排氣通道263b 之排氣口 262係位在第2處理區域200P2以及相對該區 域200P2而鄰接於例如迴轉台202之迴轉方向下游側的 分離區域200D(圖34中係相當於設置有分離氣體噴嘴 241之凸狀部204所覆蓋的區域)之間處。亦即，係位於 圖34中二點鏈線所示的迴轉台2〇2中心與第2處理區 域200P2所連通之直線L3、以及迴轉台202中心與鄰 接於該第2處理區域200P2下游側之分離區域2〇〇D的 上游側邊緣所連通的直線L4之間處。 但是’設置該等第1、第2排氣口 261、262的位 置並非限定於真空容器201之底面部，亦可設置於真空 容器201之侧壁處。然後，將排氣口 261、262設置於 真空谷器201之侧壁的情況，其亦可設置於較迴轉台 202更兩位置處。藉由設置前述排氣口 Μ〗、能讓 迴轉台202上方的氣體朝向迴轉台2〇2外侧流動因此 相較=從面向迴轉台202之頂面處進行排氣之情況，本 結構就能抑制微粒之揚起的觀點係為有利的。 如圖32所示，第1排氣口加係經由第1排氣通 道263a而連接至由連續設置例如機械升壓隸乾栗所 構成的真空泵264a，且於該等排氣口 261與真空泵26乜 之間係介設有第i壓力調節機構265a。第|壓力調節機 構26=係由壓力調相（由例如糊所組成）、開關該壓 力_閥的馬達、以及控制該馬達之動作的現場型控制 67 201025480 器所構成（圖中皆未顯示），而構成能根據設置在該壓力 調節機構265a上游侧之排氣通道263a的壓力計266a 所檢測之結果來進行壓力調節的ApC(Aut〇 pressure Controller)。此處之真空泵26乜係相當於第1真空排氣 機構’以下，將第1排氣通道263a、第1壓力調節機構 265a以及真空泵264a統稱為第i排氣系統。 該壓力計266a係可達成量測該排氣通道263a上游 側的真空容器201内之第1處理區域200P1壓力的功 能’藉由根據該壓力計266a之檢測結果來進行壓力調❹ 節，可讓該第1壓力調節機構265a具有讓第1處理區 域200P1保持於一定之壓力氣氛的功能。 又’前述第2排氣口 262亦相同地，藉由第2排氣 通道263b而連接至第2真空排氣機構(真空泵264b)， 於該等排氣口 262與真空泵264b之間係介設有能讓真 空容器1内之第2處理區域200P2保持於一定之壓力氣 氛的第2壓力調節機構265b，而能與前述第丨排氣通 道263a相互獨立地進行排氣。然後，第2壓力調節機❹ 構265b係構成能根據該調節機構265b上游侧的排氣通 道263b所設置之壓力計266b的檢測結果來進行壓力調 節的例如現場型APC。以下，將該等第2排氣通道 263b、第2壓力調節機構265b以及真空泵264b統稱為 第2排氣系統。又’各真空果264a、264b下游侧係連 接有針對從各排氣系統所排出之排出物各自獨立地進 行廢棄物處理用的第1、第2廢棄物處理裝置（圖中皆未 68 201025480 顯示）。 °亥迴轉台2〇2與真空容 器201的底面部214之間的 空間係如m μ „ — 时一 及圖37所示地設置有加熱機構(加熱器 ^^207)’而可經由迴轉台2〇2來將迴轉台2〇2上的晶 、加熱至製程條件所決定的溫度。該迴轉台202周 ^附近之下方側係圍繞加熱器單元207之整體周緣而 °又置有遮蔽組件271，以區分出迴轉台202上方空間乃 ❹ ，排氣區域2GQE卜20GE2的氣氛以及置放有該加熱器 單元207的氣氛。該遮蔽組件271之上緣係朝外側彎曲 而形成凸緣形狀，而能縮小其彎曲面與迴轉台202下方 面之間的間隙，以抑制氣體從外側侵入至遮蔽組件271 内。 於迴轉台202之下方面的中心部附近’位於較設置 有加熱器單元207之空間更靠近迴轉中心的底面部214 部位係接近至轴心部221而於其之間形成狹窄空間， © 又’關於使得迴轉軸222貫穿該底面部214的貫通孔， 其内周緣面與迴轉轴222之間隙亦為狹窄的，且該等狹 窄空間係連通至該殼體220内。然後，該殼體220係設 置有將沖洗氣體(N2氣體）供給至該狹窄空間内以進行 沖洗用的沖洗氣體供給管272。又’於加熱器單元207 之下方側位置處，真空容器201之底面部214係沿圓周 方向於複數位置處設置有用以沖洗加熱器單元207之 毁置空間的沖洗氣體供給管273。 藉由設置前述之沖洗氣體供給管272、273，如圖 69 201025480 38中沖洗氣體之流動箭號所示’以N2氣體來沖洗該殼 體220内乃至加熱器單元207之設置空間為止的空間， 該沖洗氣體係從迴轉台202與遮蔽組件271之間的間隙 並經由排氣區域200E1、200E2而排出至排氣口 261、 262。藉此可防止BTBAS氣體或Ο;氣體從前述第丨處 理區域200P1與第2處理區域200P2中任一側經由迴轉 台202下方而流入另一侧’因此該沖洗氣體可達到分離 氣體之功用。 又，真空容器201之頂板211中心部係連接至分離 氣體供給管251，以將分離氣體(N2氣體)供給至頂板211 與軸心部221之間的空間252。供給至該空間252的分 離氣體係經由突出部205與迴轉台202之狹窄間隙25〇 並沿著迴轉台202之晶圓載置區域侧的表面朝周緣處 喷出。由於該突出部205所圍繞的空間充滿了分離氣 體，故可防止反應氣體(BTBAS氣體或〇3氣體)經由第 1處理區域200P1與第2處理區域200P2之間的迴轉台 202中心部而相互混合。亦即，該成膜裝置係具備有由 迴轉台202之迴轉中心部與真空容器201所劃分形成而 用以分離第1處理區域200P1與第2處理區域200P2 之氟氛的中心部區域200C，其中該中心部區域200C係 沿·該迴轉方向而形成有當被分離氣體沖洗的同時會將 分離氟體噴出至該迴轉台202表面的喷出口。另外，此 處所述之噴出口係相當於該突出部205與迴轉台2〇2之 狹舉間隙250。 201025480 再者，如圖33、圖34 圖中未顯示之問間來進行送口215可藉由 載置區域（凹部224)係於^才又，迴轉台202之晶圓 與搬送手臂210之間進行215的位置處來 202之下方側掛雇於每#丁晶圓W傳遞，因此在迴轉台. Then, the so-called "so-called "the gas can not be invaded" and only "there is no way to enter the lower side of the convex portion 204 from the adjacent space, which means that it will still invade, but it can be maintained in the gas of each person." In the case where the BTBAS gas is not mixed in the convex portion, as long as the above-described action can be achieved, the function of the separation region 20GD is to separate the atmosphere of the separation region pi and the atmosphere of the second treatment region 2GGP2. The separation is made so that the degree of the space is set to ensure that the narrow space (the space below the convex portion 204) and the region adjacent to the space 62 201025480 5, the space below the second top surface 245 The pressure difference of _ can exert a size that prevents the gas from entering, and the size of the denier varies depending on the area of the convex portion 204 and the like. In addition, when there is no ground, the gas system adsorbed on the wafer W can pass through the fine interior of the separation region 2, and the gas intrusion is prevented from being referred to as gas in the gas phase. On the other hand, as shown in FIGS. 36 and 38, a projection 2〇5 is provided along the outer periphery of the axial center portion 221 and below the top plate 211 so that the 〇S faces the pivot portion of the turntable 2G2. 221 the outer peripheral side of the site. As shown in FIG. 36, the protruding portion 205 is continuously formed at a portion of the convex portion 2? 4 located on the center of rotation of the turntable 202, and the lower portion thereof is formed to be the same as the lower side of the convex portion 204 (top surface 244). ^ degrees. 33 and 34 are diagrams of cutting the top plate 211 horizontally from a position lower than the top surface 245 and more sturdy than the separation gas nozzles 241, 242. Further, the projections 205 and the projections 204 are not necessarily defined as being integrally formed, and may be individual bodies. The method of manufacturing the combined structure of the convex portion 204 and the separation gas nozzle 241 (242) is not limited to the formation of the groove portion 243 at the center of one of the fan-shaped plates as the convex portion 204, and the groove portion 243 is formed in the groove portion 243. The structure of the separation gas nozzle 241 (242) is provided, and the structure of the two sides of the separation gas nozzle 241 (242) for fixing the fan blade to the lower surface of the top plate body by screwing or the like may be used. . In the present example, the separation gas nozzles 241 (242) are arranged at intervals of, for example, 10 mm in the longitudinal direction of the nozzles with a discharge hole facing downward, for example, having a diameter of 0.5 mm. Further, the first reaction gas jet 63 201025480 is formed by ejecting a nozzle hole having a diameter of G. 5 mm directly below the nozzle in the longitudinal direction of the nozzle at intervals of, for example, 10 m. In the present example, the wafer w having a diameter of 3 mm is used as the substrate to be processed, and the convex portion 204 is located at a position of, for example, 14 mm from the center of rotation (at the boundary portion of the protruding portion 5 to be described later). The length in the circumferential direction (the arc length of the concentric circles of the turntable 202) is, for example, 146 mm, and the length in the circumferential direction at the outermost portion of the wafer W mounting region (recessed portion 224) is, for example, 502 mm. Further, as shown in Fig. 35A, at the outer side portion of the province, the length of the convex portion 2〇4 at each of the left and right sides of the separation gas nozzle 241 (242) 之 is L, and the length L is 246 ηππι. Further, as shown in Fig. 35A, the height h of the lower surface of the convex portion 2〇4 (i.e., the top surface 244) from the surface of the turntable 202 may be, for example, 05 min to 10 mm, preferably about 4 mm. In this case, the rotational speed of the turntable 2〇2 is set to, for example, 1 rpm to 500 rpm.) In order to secure the separation function of the separation area 2〇〇D, the convexity is set according to, for example, an experiment, etc., depending on the use range of the rotational speed of the rotary table 202, and the like. The size of the portion 204 and the height h between the convex portion 2〇4 (the first top surface 244) and the surface of the turntable 202. In addition, the separation gas is not limited to N2, and an inert gas such as Ar may be used. However, it is not limited to the inert gas, and hydrogen gas or the like may be used as long as it does not affect the film formation process. There are no special restrictions on the types. The lower side of the top plate 211 of the vacuum barn 201 (i.e., the top surface seen from the wafer mounting area (recessed portion 224) of the turntable 202) has a first top surface 244 in the circumferential direction as previously described 64 201025480. And a second top surface 245' having a height higher than the top surface 244. FIG. 32 is a longitudinal cross-sectional view of a region in which a higher top surface 245 is disposed. FIG. 36 is a longitudinal cross-sectional view of an area provided with a lower top surface 244. . As shown in Figs. 33 and 36, the peripheral portion of the fan-shaped convex portion 204 (the outer edge side portion of the vacuum container 201) is formed with a curved portion 246 which is curved in an L shape so as to face the outer end surface of the revolving table 202. The fan-shaped convex portion 204 is disposed on the top plate 211 side, and is detachable from the container body 212, so that between the outer end surface of the turntable 202 and the inner peripheral surface of the curved portion 206, and at the curved portion 246 There is a slight gap between the inner peripheral faces of the outer peripheral surface of the crying body 212. Here, similarly to the convex portion 204, the curved portion 246 is provided for the purpose of preventing the reaction gas from intruding from both sides to prevent the two reaction gases from mixing with each other, and the inner peripheral surface of the curved portion 246 and the outer end surface of the turntable 2〇2 The gap between them is set to, for example, the same as the high yield of the top surface of the turntable 2=2, that is, in this example, the 'curved part of the surface side area' from the turntable 2〇2 The peripheral surface within 246 constitutes the true peripheral wall. The benefit < 円 is in the separation area 2〇〇〇, as shown in Fig. 36 of the container body 212, is close to the f4=22 is a vertical plane, but is outside the separation area 2_; As shown, for example, the direction of rotation "a ortho position" is cut into a longitudinal section as shown in Fig. 32, part 2U: the shape is a rectangle=to the bottom surface structure. At the recessed portion, the ab side is concave between the inner peripheral wall The cross-talk is self-connected; = 65 201025480 200P1 and the second processing region 200P2', and the reaction gas supplied to each of the processing regions 200P and 200P2 can be discharged. These gaps are referred to as first exhaust regions 200E1 and 2, the exhaust region 200E2, at the bottom of the first exhaust region 200E1 and the second exhaust region 200E2 (that is, below the 'rotary table 2Ό2), as shown in FIGS. 32 and 34, each of which is formed with a first exhaust gas The port 261 and the second exhaust port 262. As shown in Fig. 40, for example, in the plan view, the exhaust ports 261, 262 are provided on both sides of the separating direction 200D (the convex portion 204) in the direction of rotation ' It is specially used for exhausting each reaction gas (BTBAS gas and © 〇3 gas) to make the separation area D Separation action. In this example, one side of the exhaust port 261 is disposed between the second reaction gas nozzle 231 and the separation region 200D adjacent to the downstream side of the rotation direction (relative to the reaction gas nozzle 231), The exhaust port 262 on the other side is disposed between the second reaction gas nozzle 232 and the separation region 200D adjacent to the downstream side of the rotation direction (relative to the reaction gas nozzle 232). In other words, as shown in FIG. From the center of rotation of the turntable 2〇2, the exhaust port 261 of the first exhaust passage 263a is positioned in the first processing region 200P1 and is adjacent to the region 2〇〇pl and adjacent to, for example, the turning direction of the turntable 202. The separation area 2〇〇D on the downstream side (in the figure % corresponds to the area covered by the convex portion 2〇4 where the separation gas nozzle 242 is provided), that is, the point line is a little bit line in FIG. The line connecting the center of the turntable 202 to the first processing area 2〇〇ρι and the center of the turntable 202 and the upstream side edge of the separation area 200D adjacent to the i-th processing area 2〇〇ρι下66 201025480 Between the connected lines L2 Further, from the center of rotation, the exhaust port 262 of the second exhaust passage 263b is located in the second processing region 200P2 and the separation region adjacent to the region 200P2 and adjacent to the downstream side in the direction of rotation of the turntable 202, for example. 200D (corresponding to the area covered by the convex portion 204 provided with the separation gas nozzle 241 in Fig. 34), that is, the center of the rotary table 2〇2 shown by the two-dot chain line in Fig. 34 The straight line L3 that the second processing region 200P2 communicates with, and the center of the turntable 202 are located between the line L4 that is adjacent to the upstream side edge of the separation region 2DD on the downstream side of the second processing region 200P2. However, the position at which the first and second exhaust ports 261 and 262 are provided is not limited to the bottom surface portion of the vacuum container 201, and may be provided at the side wall of the vacuum container 201. Then, the exhaust ports 261, 262 are disposed on the side walls of the vacuum barn 201, which may be disposed at two more positions than the turntable 202. By providing the exhaust port 、, the gas above the turntable 202 can be caused to flow toward the outside of the turntable 2〇2, so that the structure can be suppressed compared with the case where the exhaust gas is exhausted from the top surface of the turntable 202. The idea that the particles are raised is advantageous. As shown in FIG. 32, the first exhaust port is connected via a first exhaust passage 263a to a vacuum pump 264a which is formed by continuously providing, for example, a mechanical booster, and is disposed at the exhaust port 261 and the vacuum pump 26, respectively. The i-th pressure adjusting mechanism 265a is interposed between the crucibles. The first pressure regulating mechanism 26= is composed of a pressure phase modulation (composed of, for example, paste), a motor that switches the pressure valve, and a field type control 67 201025480 that controls the operation of the motor (not shown in the drawings). On the other hand, an ApC (Aut〇 Pressure Controller) that can perform pressure adjustment based on the result of the pressure gauge 266a provided on the exhaust passage 263a on the upstream side of the pressure adjustment mechanism 265a is constructed. Here, the vacuum pump 26 is equivalent to the first vacuum exhaust mechanism hereinafter, and the first exhaust passage 263a, the first pressure adjusting mechanism 265a, and the vacuum pump 264a are collectively referred to as an ith exhaust system. The pressure gauge 266a is capable of measuring the pressure of the first processing region 200P1 in the vacuum container 201 on the upstream side of the exhaust passage 263a. By performing the pressure adjustment according to the detection result of the pressure gauge 266a, The first pressure adjusting mechanism 265a has a function of holding the first processing region 200P1 in a constant pressure atmosphere. Further, the second exhaust port 262 is connected to the second vacuum exhaust mechanism (vacuum pump 264b) via the second exhaust passage 263b, and is disposed between the exhaust port 262 and the vacuum pump 264b. The second pressure adjusting mechanism 265b that can maintain the second processing region 200P2 in the vacuum chamber 1 in a constant pressure atmosphere can be exhausted independently of the second exhaust passage 263a. Then, the second pressure regulator mechanism 265b constitutes, for example, a field type APC capable of performing pressure adjustment based on the detection result of the pressure gauge 266b provided on the exhaust passage 263b on the upstream side of the adjustment mechanism 265b. Hereinafter, the second exhaust passage 263b, the second pressure adjusting mechanism 265b, and the vacuum pump 264b are collectively referred to as a second exhaust system. Further, the first and second waste disposal apparatuses for independently discharging waste materials discharged from the respective exhaust systems are connected to the downstream side of each of the vacuum fruits 264a and 264b (both in the figure are not shown in 2010. ). The space between the ° turret 2 〇 2 and the bottom surface portion 214 of the vacuum container 201 is such that m μ „ — and the heating mechanism (heater ^ 207 207 ) is provided as shown in FIG. 37 and can be passed through the turntable 2〇2, the crystal on the turntable 2〇2 is heated to the temperature determined by the process conditions. The lower side of the turntable 202 is surrounded by the entire circumference of the heater unit 207, and the shielding assembly 271 is further disposed. In order to distinguish the space above the turntable 202, the atmosphere of the exhaust region 2GQE, and the atmosphere in which the heater unit 207 is placed. The upper edge of the shield assembly 271 is bent outward to form a flange shape, and The gap between the curved surface and the lower side of the turntable 202 can be narrowed to suppress the intrusion of gas from the outside into the shield assembly 271. The vicinity of the center portion of the lower portion of the turntable 202 is located in a space in which the heater unit 207 is disposed. The bottom surface portion 214 closer to the center of rotation is closer to the axial center portion 221 to form a narrow space therebetween, and the 'internal peripheral surface and the rotary shaft 222 are formed with respect to the through hole through which the rotary shaft 222 passes through the bottom surface portion 214. The gap The narrow space is connected to the casing 220. The casing 220 is then provided with a flushing gas supply pipe 272 for supplying flushing gas (N2 gas) into the narrow space for flushing. Further, at the lower side of the heater unit 207, the bottom surface portion 214 of the vacuum vessel 201 is provided with a flushing gas supply pipe 273 for rinsing the ruined space of the heater unit 207 at a plurality of positions in the circumferential direction. The flushing gas supply pipes 272 and 273 described above, as shown by the flow arrows of the flushing gas in FIG. 69 201025480 38, 'wash the space in the casing 220 and the installation space of the heater unit 207 with N 2 gas, the flushing gas From the gap between the turntable 202 and the shield assembly 271 and through the exhaust regions 200E1, 200E2 to the exhaust ports 261, 262. This prevents BTBAS gas or helium; gas from the aforementioned second processing region 200P1 and 2, either side of the treatment area 200P2 flows into the other side via the lower side of the turntable 202. Therefore, the flushing gas can achieve the function of separating gas. Also, the top plate 211 of the vacuum container 201 The part is connected to the separation gas supply pipe 251 to supply the separation gas (N2 gas) to the space 252 between the top plate 211 and the axial center portion 221. The separation gas system supplied to the space 252 passes through the protruding portion 205 and the turntable 202. The narrow gap 25 〇 is ejected toward the peripheral edge along the surface on the wafer mounting region side of the turntable 202. Since the space surrounded by the protruding portion 205 is filled with the separation gas, the reaction gas (BTBAS gas or 〇3) can be prevented. The gas is mixed with each other via the center portion of the turntable 202 between the first processing region 200P1 and the second processing region 200P2. In other words, the film forming apparatus includes a central portion region 200C that is formed by dividing the center of rotation of the turntable 202 and the vacuum container 201 to separate the fluorine atmosphere of the first processing region 200P1 and the second processing region 200P2. The center portion region 200C is formed with a discharge port that discharges the separated fluorine body to the surface of the turntable 202 while being flushed by the separation gas in the rotation direction. Further, the discharge port described here corresponds to the narrow gap 250 between the protruding portion 205 and the turntable 2〇2. 201025480 Further, as shown in FIGS. 33 and 34, the delivery port 215 can be attached between the wafer of the turntable 202 and the transfer arm 210 by the placement area (recess 224). At the position of 215, the lower side of the 202 is hung on each of the D wafers, so the turntable is
凹部224而可從内、面處將遞曰位置 ==處，設置有貫穿 216之昇降機構(圖中未:;:)圓/抬起的傳遞用昇降销 1備有it™ 32' S 34所* ’本實施形S之成膜裝置 具備有由電腦所組成之用 π夏 部·，該押納200 制裝置整體動作的控制 工制°卩〇之圮憶體内係記憶有用以使裝置 該程式係由用以實施後述之裝_作岭 =戶^成’並可由硬碟、光碟、磁光碟(m〇)、記憶 卡、軟碟等記憶體安裝至控制部200内。 此處，如圖32所示，控制部2〇〇係連接至前述第 1壓力調節機構265a及第2壓力調節機構265b,根據 例如由操作員從圖中未顯示之操作終端所輪入的資 訊、抑或預先設定於記憶體内的資訊，來針對各壓力調 節機構265a、265b之控制器的壓力設定值進行設定。 又，各壓力計266a、266b之檢測結果亦會輸出至控制 部200。 工 其次，說明前述實施形態的作用。首先將圖中未顯 示的閘閥開啟，藉由搬送手臂210並經由搬送口 215而 71 201025480 ::=圓傳遞至迴轉台202之凹部224内。該傳遞 圖妁所田- ^ 224停止於面向搬送口 215的位置時，如 從真空容器!之底二:底3貫通孔而讓昇降銷216 么一底°卩側進仃歼降。間歇性地旋轉該迴轉 :署私、絲订則述之晶圓W傳遞，以將晶圓W各自地 264a^ 〜作並將第卜第2壓力調節機構265a、265b ，，郎閥全開以使得各處理區域2G0P1、腑2内 空而達到預先設定的壓力，同時順時鐘地旋轉該 =轉口 2〇2並藉由加熱器單元2〇7來加熱晶圓W。詳細 說明，迴轉台202係藉由加熱器單元2()7來預先加熱至 例如3〇GC，晶圓W則载置於該迴轉台搬上以使a 受熱升溫。 ^ 在進仃該晶圓w之加熱動作的同時，於真空容器 201内供給有相當於與成膜開始後所供給之反應氣體了 ^離氣體及沖洗氣體之等量的Κ氣體，以進行真空容 器201内之壓力調節。例如從第i反應氣體喷嘴處噴出❹ lOOsccm’從第2反應氣體噴嘴232處喷出1〇,〇〇〇sccm， 從各分離氣體喷嘴24i、242處各自喷出2〇,〇〇〇sccm， 從分離氣體供給管251處喷出5,〇〇〇sccm之A氣體來 供給至真空容器201内，並以第i、第2壓力調節機構 265a、265b進行壓力調節閥的開閉動作，以使得各處理 區域200P卜200P2内的壓力達到前述之壓力設定值(例 如l，067Pa(8T〇rr))。另外，此時，各沖洗氣體供給管 72 201025480 272、273亦供給有特定量的％氣體。 接著，藉由圖中未顯示之溫度感測器來確認晶圓w 之溫度是否達到設定溫度，待確認第丨、第2處理區域 200P1、200P2的壓力已各自達到其設定壓力後，將第工 反應氣體喷嘴231及第2反應氣體喷嘴232所供給之氣 體各自切換成BTBAS氣體及〇3氣體，而開始晶圓w 之成膜動作。此時，宜緩慢地進行各反應氣體喷嘴23卜 ❹ 232之氣體切換以使得供給至真空容器2〇1内之氣體的 總流量不會發生急劇的變化。 然後，晶圓W會因迴轉台2〇2之旋轉而交互地通 過第1處理區域200P1與第2處理區域200P2，並吸附 BTBAS氣體’接著吸附a氣體而使得BTBAS分子被 氧化而形成1層或複數層的氧化矽分子層，如此一來可 依序地層積氧化矽分子層以形成具特定膜厚的矽氧化 膜。 ⑩ 此時，分離氣體供給管251亦供給有分離氣體(n2 氣體）’藉此，中心部區域200C(即，突出部2〇5與迴轉 台202中心部之間）便沿迴轉台2〇2表面而喷出沁氣 體。本範例中，沿著設置有反應氣體喰嘴之 第2頂面45下方侧空間的容器本體212之内周緣壁處 係如前述般地將該内周緣壁切開而擴張，且排氣口 261、262係位於該寬廣空間的下方，故第2頂面245 之下方側空間的壓力會較第i頂面244之下方側的狹陸 空間以及前記中心部區域200C等各壓力值更低。從各 73 201025480 部位將氣體喷出時之氣體流動狀態模式係如圖41所 示。從第2反應氣體嘴嘴232朝下方侧噴^並撞擊至迴 轉台202表面（晶圓W表面以及非载置晶圓w的區域之 表面雙方）而沿著該表面流向迴轉方向上游側的〇3氣 體，係會被來自該上游侧的N2氣體推回而流入至位在 迴轉台202周緣與真空谷器201内周壁之間的排氣區域 200E2内，再藉由排氣口 262排出。 又，從第2反應氣體喷嘴232朝下方側喷出並撞擊 至迴轉台202表面而Ά者該表面流向迴轉方向下游側 G 的〇3氣體，係因從中心部區域200C所噴出之n2氣體 的流動與排氣口 262之吸引作用而有流向該排氣口 262 之傾向，但其一部份會流向鄰接於下游侧的分離區域 200D，並試圖流入扇型凸狀部204的下方侧。然而，由 於該凸狀部204之頂面244的高度及圓周方向的長度係 設定為於運作時之製程參數（包含各氣體之流量等）下能 防止氣體侵入至該頂面244之下方侧的尺寸，如圖35B 所示，〇3氣體幾乎完全不能流入扇型凸狀部204之下方❹ 側，抑或多少仍會流入但其亦無法到達分離氣體噴嘴 241附近，而會被從分離氣體噴嘴241所噴出之乂氣體 推回至迴轉方向上游侧（即，處理區域200P2側），並與 從中心部區威2〇〇C喷出之议2氣體一同地流經迴轉台 202周緣與真空容器2〇1内周壁之間隙的排氡區域 2〇〇拉而排出裏排氣口⑽。 又，從第1反應氣體喷嘴231朝下方側噴出並揞擊 74 201025480 至迴轉台202表面而各自流向迴轉方向上游側及下游 側的BTBAS氣體，係幾乎完全無法侵入至鄰接於迴轉 方向上游側及下游側的扇型凸狀部2〇4之下方側，抑或 即使侵入後仍會被推回至第1處理區域2〇〇ρι側，與從 中心部區域200C噴出之沁氣體一同地從迴轉台2〇2 周緣與真空容器201内周壁之間隙流經排氣區域2〇〇e1 而排出至排氣口 261。亦即，於各分離區域2〇〇d中， 能阻止於氣氛中流動的反應氣體(BTBAS氣體或〇3氣 體)之侵入，但吸附於晶圓W之氣體分子係可直接通過 分離區域（即’由扇型凸狀部204所形成之較低頂面244 的下方），並用以成膜。 又再者，第1處理區域200P1之BTBAS氣體（第2 處理區域200P2之〇3氣體）會試圖侵入至中心部區域 200C内，但是如圖38及圖40所示，該中心部區域200C 係朝向迴轉台202之周緣而喷出分離氣體，故可藉由該 分離氣體來阻止該氣體侵入，抑或即使多少仍有侵入但 會被該分離氣體推回，可阻止其通過該中心部區域 200C而流入至第2處理區域200P2(第1處理區域 200P1)。 然後’於分離區域200D處，扇型凸狀部204之周 緣部係朝下方彎曲，且彎曲部246與迴轉台202外端面 之間的間隙係如前述般狹窄地能實質地阻止氣體通 過，故亦可阻止第1處理區域200P1之BTBAS氣體（第 2處理區域200P2之〇3氣體）經由迴轉台202之外側而 75 201025480 流入第2處理區域200P2(第1處理區域200P1)。因此， 藉由2個分離區域200D能完全地分離第1處理區域 200P1的氣氛與第2處理區域200P2的氣氛，並將 BTBAS氣體排出至排氣口 261，又將03氣體排出至排 氣口 262。其結果為，兩反應氣體於本範例中，BTBAS 氣體及03氣體不論於氣氛中或於晶圓W上皆不會相互 混合。 另外，本範例係藉由N2氣體來沖洗迴轉台202之 下方側，因此完全無需擔憂流入至排氣區域200E1、 ❿ 200E2的氣體會經由迴轉台202下方侧而有例如 BTBAS氣體流入〇3氣體之供給區域等問題。 前述第1、第2處理區域200P1、200P2係經由各 排氣區域200E1、200E2而連接至專用的排氣通道 263a、263b，故流入第1處理區域200P1及第1排氣區 域200E1的各種氣體會藉由第1排氣通道263a排出， 流入第2處理區域200P2及第2排氣區域200E2的各種 氣體則藉由第2排氣通道263b排出。因此，可將供給 © 至其中一側之處理區域200P1、200P2的反應氣體排出 至真空容器201外而不會與供給至另一側之處理區域 200P2、200P1的反應氣體相互混合。完成前述成膜處 理後，藉由搬送手臂210以搬入時之相反動作來依序地 將各晶圓W搬出。 此處記載有處理參數之一範例，以直徑3〇〇mm的 晶圓W作為被處理基板之情況，迴轉台202之轉速為 76 201025480 例如lrpm〜500rPm，製程壓力為例如， 曰曰圓W之加熱溫度為例如35〇〇C，BTBAS氣體及0, 氣體之流量各為例如l〇〇sccm及l〇，_sccm，來自分離 氣體喷嘴241、242的N2氣體流量為例如20000sccm， 來自真空容器201中心部之分離氣體供給管251的 氣體流量為例如5,000sccm。又，針對1片晶圓進行之 反應氣體供給的循環次數，即晶圓W各自通過處理區 ® 域200P1、200P2的次數會隨著目標膜厚而改變，多數 次為例如600次。 依前述實施形態則具有以下的效果。在具備有迴轉 台202的真空容器201内，沿迴轉方向而於供給有第t 反應氣體(BTBAS)的第1處理區域200P1與供給有第2 反應氣體(〇3氣體）的第2處理區域200P2之間處介設有 用以分離該等區域且用以從分離氣體喷嘴241、242將 分離氣體供給至該等區域之間的分離區域200D，同時 © 沿迴轉方向旋轉設置有複數個晶圓W的迴轉台202,以 藉由BTBAS及〇3氣體來層積出反應生成物層（氧化矽 層）以形成薄膜。然後，進行前述製程時，藉由各自對 應於第1處理區域200P1及第2處理區域200P2的位置 處所設置的第1排氣通道263a及第2排氣通道263b之 各排氣口 261、262來進行真空排氣，同時使得其排氣 系統(排氣通道263a、263b、壓力調節機構265a、265b 以及真空泵264a、264)為相互獨立化之結構，因此無需 擔心BTBAS氣體與Ο;氣體會於排氣系統中相互混合， 77 201025480 故不會有在排氣系統中產生反應生成物之虞（或非常 少）。 然後’藉由在分離氣體喷嘴24卜242之該迴轉方 向兩側設置有較低頂面來阻止各反應氣體侵入至分離 區域200D，同時從藉由該迴轉台之迴轉中心部與 真空谷器2〇1所劃分形成的中心部區域遍。來朝向迴 轉台2=周緣喷出分離氣體，而擴散至該分離區域兩側 的刀離氣體以及該中心部區域所喷出的分離氣體會與 該反應氣體-同地經由迴轉台2〇2周緣與真空容器2〇ι❿ 内周緣壁之間的間隙而排出，可防止相異之反應氣體相 互混合’而可進行良好之成膜處理，同時完全不會產生 反應生能抑制微粒產生。另外，本 發明亦可適用於在迴轉台202上載置有i個晶圓w之 情況。 又’本成膜|置係沿迴轉台搬之迴轉方向設置有 複數個晶圓w’藉由旋轉該迴轉台2〇2而使其依序通過 第1處理區域200P1與第2處理區域200P2以進行所謂❹ 之ALD(或MLD)’ g此相較於制背景技術所述之枚 葉式f膜裝置的情況’則不需要反應氣體之沖洗時間， 故可高產能地進行成膜處理。 此處，設置於真空容器201之排氣系統並非限定為 2組系統，例如圖42所示成膜裝置，亦可追加迴轉台 202上的凸狀部204來設置第3處理區域2〇〇p3，而於 該處理區域2卿3處連接第3組排氣系統(排氣通道 78 201025480 263c、第3壓力調節機構265c、真空泵264c)。另外， 圖42中，符號310係第3反應氣體喷嘴，符號41〇係 分離氣體噴嘴，符號260係排氣口。 又’有關連接至各處理區域200P1、200P2之排氣 系統的組數亦非限定為1組系統，亦可於1個處理區域 200P1、200P2處連接有2組系統以上的排氣系統。 又再者，排氣系統之運作方法並非限定於前述實施 形態令所示般地於各排氣系統處進行其對應之處理區 域200P1、200P2的壓力調節。例如亦可於各排氣系統 處設置流量計，調整設置於排氣通道263a、263b的閥 門之開口程度，以使得各處理區域之排氣量能達到其預 設值。有關進行壓力調節與排氣量調節的機構，亦非限 定於使用閥門之開閉來進行，亦可藉由例如改變真空泵 264a、264b之機械升壓泵的轉速來調整壓力與排氣量。 作為本發明適用之處理氣體，除前述範例之外，亦 可舉出DCS[二氯矽烷]、HCD[六氯二矽曱烷]、TMA[三 甲基鋁]、3DMAS[三（二曱胺基)矽烷]、TEMAZ[四（乙基 曱基胺基酸)-锆]、TEMAH[四（乙基甲基胺基酸)-铪]、 Sr(THD)2[二（四曱基庚二酮酸)-锶]、Ti(MPD)(THD)[甲 基戊二酮酸)(雙四甲基庚二酮酸)-鈦]以及單胺基矽烷 等。 接著，形成位在該分離氣體供給喷嘴241(242)兩侧 之狹隘空間的該第1頂面244，如圖43A、圖43B所示 該分離氣體供給喷嘴241般，以例如直徑300mm之晶 79 201025480 圓W作為被處理基板之情況，晶圓w之中心wo所通 過部位處沿迴轉台202之迴轉方向的寬度尺寸L為 50mm以上者較佳。為了有效地阻止反應氣體自凸狀部 204兩侧侵入至該凸狀部204下方(狹隘空間），前述莧 度尺寸L過短時則必須對應地縮小第1頂面244與迴轉 台202之間的距離。再者，將第1頂面244與迴轉台 202之間的距離設定為某特定尺寸時，離該迴轉台202 之迴轉中心越遠則迴轉台202之速度便越快，因此為了 獲得阻止反應氣體侵入之效果，離迴轉中心越遠則所需The recessed portion 224 can be provided with an elevation/lowering mechanism (not shown in the figure). The lifting/lowering pin 1 for lifting/lifting is provided with itTM 32' S 34 from the inner and the surface. * The film forming apparatus of the present embodiment S is provided with a π-xia part composed of a computer, and the control system of the device of the yelling system is used to make the device useful for the device. The program is installed in the control unit 200 by a memory such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a floppy disk. Here, as shown in FIG. 32, the control unit 2 is connected to the first pressure adjustment mechanism 265a and the second pressure adjustment mechanism 265b, and is based on, for example, information that is rotated by an operator from an operation terminal not shown. The information set in the memory is set in advance for the pressure setting value of the controller of each of the pressure adjusting mechanisms 265a and 265b. Further, the detection results of the pressure gauges 266a and 266b are also output to the control unit 200. Next, the action of the above embodiment will be described. First, the gate valve not shown in the figure is opened, and the arm 210 is conveyed and transferred to the recess 224 of the turntable 202 via the transfer port 215 71 201025480 ::= circle. The transfer diagram 妁田田 - ^ 224 stops at the position facing the transfer port 215, such as from the bottom of the vacuum container! bottom: bottom 3 through the hole and let the lift pin 216 a bottom. The rotation is intermittently rotated: the wafer W is transferred, and the wafer W is transferred to the wafer W, and the second pressure regulating mechanism 265a, 265b, and the lang valve are fully opened so that each The processing areas 2G0P1 and 腑2 are vacant to reach a preset pressure while rotating the = port 2〇2 clockwise and heating the wafer W by the heater unit 2〇7. More specifically, the turntable 202 is preheated to, for example, 3 〇 GC by the heater unit 2 () 7, and the wafer W is placed on the turntable to heat up a. ^ While the heating operation of the wafer w is being performed, a helium gas corresponding to the amount of the gas and the flushing gas supplied from the reaction gas supplied after the film formation is started is supplied to the vacuum vessel 201 to perform vacuum. The pressure within the container 201 is adjusted. For example, ❹100 sccm is ejected from the i-th reaction gas nozzle, and one 〇, 〇〇〇sccm is ejected from the second reaction gas nozzle 232, and two 喷, 〇〇〇sccm are ejected from each of the separation gas nozzles 24i and 242, respectively. 5 gas is discharged from the separation gas supply pipe 251, and the A gas of 〇〇〇sccm is supplied into the vacuum vessel 201, and the pressure regulating valves are opened and closed by the i-th and second pressure adjusting mechanisms 265a and 265b so that each The pressure in the treatment zone 200P 200P2 reaches the aforementioned pressure set point (e.g., 1,067 Pa (8T rrrr)). Further, at this time, each of the flushing gas supply pipes 72, 201025480, 272, and 273 is also supplied with a specific amount of % gas. Next, it is confirmed by the temperature sensor not shown in the figure whether the temperature of the wafer w has reached the set temperature. After the pressures of the second and second processing regions 200P1 and 200P2 have respectively reached the set pressure, the first work will be completed. The gases supplied from the reaction gas nozzle 231 and the second reaction gas nozzle 232 are switched to the BTBAS gas and the 〇3 gas, respectively, and the film formation operation of the wafer w is started. At this time, it is preferable to slowly switch the gas of each of the reaction gas nozzles 23 to 232 so that the total flow rate of the gas supplied into the vacuum vessel 2〇1 does not change abruptly. Then, the wafer W alternately passes through the first processing region 200P1 and the second processing region 200P2 due to the rotation of the turntable 2〇2, and adsorbs the BTBAS gas 'and then adsorbs the a gas to cause the BTBAS molecule to be oxidized to form a layer or A plurality of layers of ruthenium oxide molecules, such that the ruthenium oxide layer is sequentially deposited to form a ruthenium oxide film having a specific film thickness. At this time, the separation gas supply pipe 251 is also supplied with the separation gas (n2 gas)', whereby the center portion region 200C (that is, between the projection portion 2〇5 and the center portion of the turntable 202) is along the turntable 2〇2 The surface is ejected with helium gas. In this example, the inner peripheral wall of the container body 212 along the space below the second top surface 45 of the reaction gas nozzle is cut and expanded as described above, and the exhaust port 261, Since the 262 is located below the wide space, the pressure in the space below the second top surface 245 is lower than the pressure values on the lower side of the i-th top surface 244 and the front center portion 200C. The gas flow state pattern when gas is ejected from each of the 73 201025480 parts is shown in Fig. 41. The second reaction gas nozzle 232 is sprayed downward and hits the surface of the turntable 202 (both surfaces of the wafer W and the region where the wafer w is not placed), and flows along the surface toward the upstream side in the rotation direction. The gas 3 is pushed back by the N2 gas from the upstream side and flows into the exhaust region 200E2 between the periphery of the turntable 202 and the inner peripheral wall of the vacuum damper 201, and is discharged through the exhaust port 262. In addition, the 〇3 gas which is ejected from the second reaction gas nozzle 232 toward the lower side and hits the surface of the turntable 202 and flows to the downstream side G of the rotation direction is the n2 gas ejected from the central portion region 200C. The flow and exhaust ports 262 have a tendency to flow toward the exhaust port 262, but a portion thereof flows to the separation region 200D adjacent to the downstream side, and attempts to flow into the lower side of the fan-shaped convex portion 204. However, since the height of the top surface 244 of the convex portion 204 and the length in the circumferential direction are set to prevent gas from intruding to the lower side of the top surface 244 under process parameters (including the flow rate of each gas, etc.) during operation. The size, as shown in Fig. 35B, is almost completely incapable of flowing into the lower side of the fan-shaped convex portion 204, or is still somewhat inflow but it cannot reach the vicinity of the separation gas nozzle 241 but is separated from the separation gas nozzle 241. The ejected helium gas is pushed back to the upstream side in the direction of rotation (ie, the side of the processing region 200P2), and flows through the periphery of the turntable 202 and the vacuum vessel 2 together with the gas 2 ejected from the center portion. The draining area 2 of the gap between the inner peripheral walls of the crucible 1 is pulled and discharged into the inner exhaust port (10). Further, the BTBAS gas which is ejected from the first reaction gas nozzle 231 toward the lower side and slams 74 201025480 to the surface of the turntable 202 and flows to the upstream side and the downstream side in the rotation direction is almost completely inaccessible to the upstream side in the rotation direction and The lower side of the fan-shaped convex portion 2〇4 on the downstream side is pushed back to the first processing region 2〇〇ρι side even after intrusion, and is rotated from the turntable together with the helium gas ejected from the central portion region 200C. The gap between the circumference 2 and the inner peripheral wall of the vacuum vessel 201 flows through the exhaust region 2〇〇e1 and is discharged to the exhaust port 261. That is, in each of the separation regions 2〇〇d, the intrusion of the reaction gas (BTBAS gas or helium 3 gas) flowing in the atmosphere can be prevented, but the gas molecules adsorbed on the wafer W can pass directly through the separation region (ie, 'Below the lower top surface 244 formed by the fan-shaped convex portion 204) and used to form a film. Further, the BTBAS gas in the first processing region 200P1 (the gas in the second processing region 200P2) attempts to intrude into the central portion region 200C. However, as shown in FIGS. 38 and 40, the central portion region 200C is oriented. The separation gas is ejected from the periphery of the turntable 202, so that the gas can be prevented from intruding by the separation gas, or even if it is still invaded, it is pushed back by the separation gas, and it can be prevented from flowing through the center portion region 200C. The second processing region 200P2 (first processing region 200P1). Then, at the separation region 200D, the peripheral portion of the fan-shaped convex portion 204 is bent downward, and the gap between the curved portion 246 and the outer end surface of the turntable 202 is substantially narrow as described above to substantially prevent the passage of gas. The BTBAS gas (gas 3 in the second processing region 200P2) of the first processing region 200P1 can be prevented from flowing into the second processing region 200P2 (first processing region 200P1) via the outer side of the turntable 202 and 75 201025480. Therefore, the atmosphere of the first processing region 200P1 and the atmosphere of the second processing region 200P2 can be completely separated by the two separation regions 200D, and the BTBAS gas is discharged to the exhaust port 261, and the 03 gas is discharged to the exhaust port 262. . As a result, the two reaction gases are in this example, and the BTBAS gas and the 03 gas are not mixed with each other in the atmosphere or on the wafer W. In addition, in the present example, the lower side of the turntable 202 is flushed by the N2 gas, so that there is no need to worry that the gas flowing into the exhaust regions 200E1 and 200E2 will pass through the lower side of the turntable 202, for example, the BTBAS gas flows into the gas. Supply area and other issues. Since the first and second processing regions 200P1 and 200P2 are connected to the dedicated exhaust passages 263a and 263b via the respective exhaust regions 200E1 and 200E2, various gases flowing into the first processing region 200P1 and the first exhaust region 200E1 may be The first exhaust passage 263a is discharged, and the various gases that have flowed into the second processing region 200P2 and the second exhaust region 200E2 are discharged through the second exhaust passage 263b. Therefore, the reaction gas supplied to the processing regions 200P1, 200P2 on one side can be discharged to the outside of the vacuum container 201 without being mixed with the reaction gas supplied to the processing regions 200P2, 200P1 on the other side. After the film forming process is completed, the wafers W are sequentially carried out by the transfer arm 210 in the opposite direction of the loading. Here, an example of processing parameters is described. In the case where the wafer W having a diameter of 3 mm is used as the substrate to be processed, the rotational speed of the rotary table 202 is 76 201025480, for example, 1 rpm to 500 rPm, and the process pressure is, for example, 曰曰 round W The heating temperature is, for example, 35 〇〇C, BTBAS gas and 0, and the flow rates of the gases are, for example, 10 〇〇 sccm and 10 〇, _sccm, and the flow rate of the N 2 gas from the separation gas nozzles 241, 242 is, for example, 20,000 sccm, from the center of the vacuum vessel 201. The gas flow rate of the separation gas supply pipe 251 of the portion is, for example, 5,000 sccm. Further, the number of cycles of supply of the reaction gas to one wafer, that is, the number of times the wafer W passes through the processing zone ® fields 200P1, 200P2 varies depending on the target film thickness, and is, for example, 600 times. According to the above embodiment, the following effects are obtained. In the vacuum container 201 including the turntable 202, the first processing region 200P1 to which the t-th reaction gas (BTBAS) is supplied and the second processing region 200P2 to which the second reaction gas (〇3 gas) is supplied are provided in the rotation direction. A separation region 200D for separating the regions from the separation gas nozzles 241, 242 to between the regions is provided, and a plurality of wafers W are disposed to rotate in the rotation direction. The turntable 202 laminates a reaction product layer (yttria layer) by BTBAS and helium 3 gas to form a film. Then, when the process is performed, the exhaust ports 261 and 262 of the first exhaust passage 263a and the second exhaust passage 263b provided at positions corresponding to the first processing region 200P1 and the second processing region 200P2 are respectively provided. Vacuum evacuation is performed while the exhaust system (exhaust passages 263a, 263b, pressure regulating mechanisms 265a, 265b, and vacuum pumps 264a, 264) are independent of each other, so there is no need to worry about BTBAS gas and helium; The gas system is mixed with each other, 77 201025480, so there is no enthalpy (or very little) in the reaction system in the exhaust system. Then, by providing a lower top surface on both sides of the separation direction of the separation gas nozzle 24 242, each reaction gas is prevented from intruding into the separation region 200D, while the rotary center portion and the vacuum valley device 2 are The central portion formed by the division of 〇1 is repeated. The separation gas is ejected toward the turntable 2=circumferential edge, and the knife-off gas diffused to both sides of the separation region and the separated gas ejected from the central portion region and the reaction gas are simultaneously passed through the periphery of the turntable 2〇2 Discharging from the gap between the inner peripheral wall of the vacuum vessel 2〇ι❿ prevents the reaction gases from being mixed with each other', and a good film formation treatment can be performed, and at the same time, no reaction is generated to suppress the generation of fine particles. Further, the present invention is also applicable to the case where i wafers w are placed on the turntable 202. Further, the "film formation" is provided in the direction of rotation of the turntable, and a plurality of wafers w' are sequentially rotated through the turntable 2'2 to pass through the first processing region 200P1 and the second processing region 200P2. When the ALD (or MLD) g of the so-called ❹ is compared with the case of the leaf-type f-film apparatus described in the background art, the rinsing time of the reaction gas is not required, so that the film formation process can be performed with high productivity. Here, the exhaust system provided in the vacuum container 201 is not limited to two sets of systems, for example, the film forming apparatus shown in FIG. 42, and the convex portion 204 on the turntable 202 may be added to set the third processing region 2〇〇p3. The third group exhaust system (exhaust passage 78 201025480 263c, third pressure adjusting mechanism 265c, vacuum pump 264c) is connected to the processing area 2. Further, in Fig. 42, reference numeral 310 denotes a third reaction gas nozzle, reference numeral 41 denotes a separation gas nozzle, and reference numeral 260 denotes an exhaust port. Further, the number of groups of the exhaust systems connected to the respective processing areas 200P1 and 200P2 is not limited to one set of systems, and two or more sets of exhaust systems may be connected to one of the processing areas 200P1 and 200P2. Further, the operation method of the exhaust system is not limited to the pressure adjustment of the corresponding processing regions 200P1, 200P2 at the respective exhaust systems as shown in the above embodiment. For example, a flow meter may be provided at each exhaust system to adjust the degree of opening of the valves provided in the exhaust passages 263a, 263b so that the exhaust amount of each processing region can reach its preset value. The mechanism for performing the pressure adjustment and the displacement adjustment is not limited to the opening and closing of the valve, and the pressure and the displacement can be adjusted by, for example, changing the rotational speed of the mechanical booster pump of the vacuum pumps 264a, 264b. As the processing gas to which the present invention is applicable, in addition to the above examples, DCS [dichlorodecane], HCD [hexachlorodioxane], TMA [trimethylaluminum], 3DMAS [tris(diamine) may also be mentioned. Base) decane], TEMAZ [tetrakis(ethyl decylamino)-zirconium], TEMAH [tetrakis(ethylmethylamino)-oxime], Sr(THD) 2 [di(tetradecyl) Keto acid)-锶], Ti(MPD)(THD)[methylpentanedionate) (bistetramethylheptanedionate)-titanium], and monoaminodecane. Next, the first top surface 244 is formed in a narrow space on both sides of the separation gas supply nozzle 241 (242), and the separation gas supply nozzle 241 is formed by, for example, a crystal of a diameter of 300 mm as shown in Figs. 43A and 43B. 201025480 In the case where the circle W is the substrate to be processed, it is preferable that the width L of the portion where the center of the wafer w passes in the direction of rotation of the turntable 202 is 50 mm or more. In order to effectively prevent the reaction gas from intruding from below the convex portion 204 (narrow space) from the both sides of the convex portion 204, when the thickness L is too short, the first top surface 244 and the turntable 202 must be correspondingly reduced. the distance. Further, when the distance between the first top surface 244 and the turntable 202 is set to a certain size, the farther from the center of rotation of the turntable 202, the faster the speed of the turntable 202 is, so that the reaction gas is prevented. The effect of intrusion, the farther away from the center of rotation, the required
的該寬度尺寸L便越長。依前述觀點考量，當晶圓W 之中心WO所通過部位之該寬度尺寸l小於5〇mm時， 便需要相當程度地縮小第1頂面244與迴轉台202之間 的距離，因此在旋轉該迴轉台202時便需要花費心力去 積極地抑制迴轉台202之振動，以防止迴轉台2〇2或晶 圓W撞擊至頂面244。又再者，迴轉台2〇2之轉速越高 則反應氣體越容易自凸狀部204之上游侧侵入至該凸 狀部204之下方側，因此當該寬度尺寸L小於 N·，便必須要降低迴轉台202之轉速，就產能之觀點來 看並f良策。故該寬度尺寸L為5〇mm以上者較佳，但 並=是指50mm以下便無法獲得本發明之效果。亦即， 该見度尺寸L為晶圓W直徑之1/1〇〜1/：1者較佳， Μ以上者更佳。另夕卜，於圖43A+為方便繪圖，故省 略了凹部224之記載。 此處’舉出除了 Μ述實施形態以外之關於處理區域 201025480 200P1、200P2及分離區域2〇〇D等各配置方式的其他範 例。圖44係將第2反應氣體噴嘴232設置於搬送口 215 之迴轉台22的迴轉方向上游側位置的範例，依此種配 置亦可獲得相同之效果。 又’本發明需要設置有於分離氣體喷嘴241(242) 兩側形成狹隘空間用的較低頂面（第1頂面)244,但亦可 為如圖45所示，在反應氣體噴嘴231(232)兩側亦同樣 地設置有較低頂面並使得該等頂面連續形成的結構， 即，除了設置有分離氣體喷嘴241(242)及反應氣體喷嘴 231(232)以外的部位，於面向迴轉台202之區域全面設 置有凸狀部204的結構亦可獲得同樣的效果。以不同角 度觀察，該結構係將分離氣體喷嘴241(242)兩侧的第1 頂面244延伸擴展至反應氣體喷嘴231(232)處的範例。 此時，分離氣體會擴散至分離氣體喷嘴241(242)兩側， 而反應氣體則擴散至反應氣體喷嘴231(232)兩侧，兩氣 體會於凸狀部204下方侧（狹隘空間）處匯流，但該等氣 體會從位於反應氣體喷嘴231(232)與分離氣體喷嘴 242(241)之間的排氣口 261(262)處排出。 以上實施形態中，迴轉台202之迴轉軸222係位於 真空容器201之中心部，並以分離氣體來沖洗該迴轉台 202中心部與真空容器201上面部之間的空間’但本發 明亦可為如圖46所示之結構。圖46之成膜裝置中’真 空容器201之中央區域的底面部214係朝下方側突出形 成有驅動部之收納空間280，同時於真空容器201之中 201025480 央區域的上方面形成有凹部280a，於真空容器201中心 部處之收納空間280的底部與真空容器201的該凹部 280a上方面之間係介設有支柱281，以防止來自第1反 應氣體噴嘴231的BTBAS氣體與來自第2反應氣體喷 嘴232之〇3氣體透過該中心部而相互混合。The longer the width dimension L is. According to the foregoing point of view, when the width dimension l of the portion where the center WO of the wafer W passes is less than 5 〇 mm, the distance between the first top surface 244 and the turntable 202 needs to be considerably reduced, so At the time of the turntable 202, it takes a lot of effort to actively suppress the vibration of the turntable 202 to prevent the turntable 2〇2 or the wafer W from striking the top surface 244. Further, the higher the rotational speed of the turntable 2〇2, the more easily the reaction gas intrudes from the upstream side of the convex portion 204 to the lower side of the convex portion 204, so when the width dimension L is smaller than N·, it is necessary Reducing the rotational speed of the rotary table 202 is a good strategy from the viewpoint of productivity. Therefore, it is preferable that the width dimension L is 5 mm or more, but the effect of the present invention cannot be obtained by the ratio of 50 mm or less. That is, the visibility size L is preferably 1/1 〇 to 1/:1 of the diameter of the wafer W, and more preferably Μ or more. In addition, in Fig. 43A+, for convenience of drawing, the description of the concave portion 224 is omitted. Here, other examples of the arrangement modes of the processing areas 201025480, 200P1, 200P2, and the separation area 2〇〇D other than the above-described embodiments will be described. Fig. 44 shows an example in which the second reaction gas nozzle 232 is disposed on the upstream side in the rotation direction of the turntable 22 of the transfer port 215, and the same effect can be obtained by this arrangement. Further, the present invention requires a lower top surface (first top surface) 244 for forming a narrow space on both sides of the separation gas nozzle 241 (242), but it may be as shown in FIG. 45 at the reaction gas nozzle 231 ( 232) A structure having a lower top surface and continuously forming the top surfaces, that is, a portion other than the separation gas nozzle 241 (242) and the reaction gas nozzle 231 (232) The same effect can be obtained by the structure in which the region of the turntable 202 is entirely provided with the convex portion 204. Viewed at different angles, the structure extends the first top surface 244 on either side of the separation gas nozzle 241 (242) to an example at the reaction gas nozzle 231 (232). At this time, the separation gas diffuses to both sides of the separation gas nozzle 241 (242), and the reaction gas diffuses to both sides of the reaction gas nozzle 231 (232), and the two gases converge at the lower side (narrow space) of the convex portion 204. However, the gases are exhausted from the exhaust port 261 (262) between the reaction gas nozzle 231 (232) and the separation gas nozzle 242 (241). In the above embodiment, the rotary shaft 222 of the turntable 202 is located at the center of the vacuum container 201, and the space between the center portion of the turntable 202 and the upper surface of the vacuum container 201 is flushed by the separated gas. The structure shown in FIG. In the film forming apparatus of Fig. 46, the bottom surface portion 214 of the central portion of the vacuum container 201 is formed with a storage space 280 in which the driving portion is formed downward, and a concave portion 280a is formed in the upper portion of the vacuum region 201 in the central portion of the 201025480. A pillar 281 is interposed between the bottom of the storage space 280 at the center of the vacuum vessel 201 and the recess 280a of the vacuum vessel 201 to prevent the BTBAS gas from the first reaction gas nozzle 231 from the second reaction gas. The gas 3 of the nozzle 232 is mixed with each other through the center portion.
關於旋轉該迴轉台2〇2之機構，係圍繞該支柱28】 設置有迴轉套筒282並沿該迴轉套筒282而設置環狀之 迴轉台202。然後，該收納空間28〇設置有可藉由馬達 283來進行驅動的驅動齒輪部284，藉由該驅動齒輪部 284，並透過形成於迴轉套筒旭之下部外周緣的齿輪 部285來旋轉該迴轉套筒282的結構。符號挪、加 及288係軸承部。又，於該收納空間之底部連 沖洗氣體供給管274，同時於真空容器2〇1之上部連接 有沖洗氣體供給管275而用以將沖洗氣體供給至該凹 部施側面與迴轉套筒282上端部之間的空間内 46係於左右2處繪出有用以將沖洗氣體供給至於該凹 部28〇a侧面與迴轉套筒282上端部之間的空間之開口 部，但較佳地，應考慮並設計開口部（沖絲體供給 之排列個數以使得BTBAS氣體與〇遺體不會經由 套筒282附近區域而相互混合。 β 圖46之實施形態中，從迴轉纟202側觀之，該凹 部280a的侧面與迴轉套筒282的上端部之間的空間係 相當於分離氣體喷丨孔’錢，藉由該分離氣體喷出 孔、迴轉套筒282及支柱281來構成位於該真空容器 82 201025480 201之中心部的中心部區域。 關於使用了前述成膜裝置之基板處理裝置係如圖 47所示。圖47中，符號291係可收納例如25片晶圓 W而被稱作晶圓盒的密閉型搬送容器，符號292係設置 有搬送手臂293的大氣搬送室’符號294、295係可於 大氣氣氛與真空氣氛之間進行氣氛切換的加載互鎖室 (真空預備室），符號296係設置有雙臂式搬送手臂297 的真空侧搬送室，符號298、299係本發明之成膜裝置。 從外部將搬送容器291搬送至具備有载置台（圖中未顯 示）的搬入搬出埠，並使其連接至大氣搬送室292後， 藉由圖中未顯示之開閉機構來將蓋體打開並藉由搬送 手臂293從該搬送容器291内將晶圓W取出。其次， 將其搬入至加載互鎖室294(295)内並使該室内由大氣 氣氛切換成真空氣氛，然後藉由搬送手臂297來將晶圓 W取出並搬入至成膜裝置298、299中任一者内，以進 行前述之成膜處理。如前述以具備有2台例如5片處理 用的本發明之成膜裝置，便可高產能地實施所謂之 ALD(MLD)。 前述係參考實施形態來說明本發明，但本發明並未 限定於所揭露之實施形態，於申請專利範圍所記載之本 發明範圍内亦可進行各種變形與變更。 本申請案係根據2008年8月29日、2008年8月 29曰以及2009年7月14日於日本提出申請之日本特 願 2008-222723 號、2008-222728 以及 2009-165984 而 83 201025480 主張其優先權，並在此引用該等全部内容。 【圖式簡單說明】 圖1係本發明第1實施形態之成膜襞置的縱剖面 m ° ' 圖2係本發明第1實施形態之成膜襞置内部的概略 構成立體圖。Regarding the mechanism for rotating the turntable 2'', a rotary sleeve 282 is provided around the support 28, and an annular turntable 202 is provided along the rotary sleeve 282. Then, the storage space 28A is provided with a drive gear portion 284 that can be driven by the motor 283, and the drive gear portion 284 is rotated by the gear portion 285 formed on the outer periphery of the lower portion of the swing sleeve. The structure of the swivel sleeve 282. The symbol is moved and added to the 288 series bearing unit. Further, a flushing gas supply pipe 274 is connected to the bottom of the storage space, and a flushing gas supply pipe 275 is connected to the upper portion of the vacuum vessel 2〇1 for supplying flushing gas to the concave side and the upper end of the rotary sleeve 282. The space 46 between the two spaces is drawn at the left and right sides to provide an opening for supplying the flushing gas to the space between the side of the recess 28a and the upper end of the swivel sleeve 282, but preferably, it should be considered and designed. The number of the openings (the number of the wire feeds is such that the BTBAS gas and the body are not mixed with each other via the vicinity of the sleeve 282.) In the embodiment of Fig. 46, the recess 280a is viewed from the side of the turn 纟 202 The space between the side surface and the upper end portion of the rotary sleeve 282 corresponds to the separation gas vent hole, and the separation gas discharge hole, the rotary sleeve 282 and the support 281 are formed in the vacuum container 82 201025480 201 The central processing unit of the center portion is as shown in Fig. 47. In Fig. 47, reference numeral 291 is a sealed type called a wafer cassette in which, for example, 25 wafers W can be accommodated. In the transport container, the symbol 292 is an atmospheric transfer chamber in which the transfer arm 293 is provided. The symbols 294 and 295 are load lock chambers (vacuum preparation chambers) in which an atmosphere can be switched between an atmosphere and a vacuum atmosphere, and the symbol 296 is provided with a double. In the vacuum side transfer chamber of the arm transfer arm 297, the symbols 298 and 299 are the film forming apparatuses of the present invention. The transfer container 291 is transported from the outside to the loading/unloading cassette provided with a mounting table (not shown) and connected. After the air transfer chamber 292 is opened, the lid body is opened by an opening and closing mechanism (not shown), and the wafer W is taken out from the transfer container 291 by the transfer arm 293. Next, it is carried into the load lock chamber 294. (295) The inside of the room is switched from the atmosphere to the vacuum atmosphere, and then the wafer W is taken out by the transfer arm 297 and carried into any one of the film forming apparatuses 298 and 299 to perform the film forming process described above. As described above, the film forming apparatus of the present invention having two, for example, five sheets of processing can perform so-called ALD (MLD) with high productivity. The present invention will be described with reference to the embodiments, but the present invention is not limited thereto. Various modifications and changes can be made within the scope of the invention as disclosed in the appended claims. The present application is based on August 29, 2008, August 29, 2008, and July 14, 2009. Japanese Patent Application Nos. 2008-222723, 2008-222728, and 2009-165984, and 83 201025480, the entire contents of which are hereby incorporated by reference, are hereby incorporated by reference. 1 is a longitudinal cross-sectional view of the inside of the film formation apparatus of the first embodiment of the present invention.
圖3係本發明第1實施形態之成膜裝置的橫剖俯視 圖。 、 圖4A、圖4B係本發明第1實施形態之成膜穿置 處理區域及分離區域的縱剖面圖。 ~ 部份縱剖 圖5係本發明第1實施形態之成膜裝置的 面圖。 置的部份剖面 圖6係本發明第1實施形態之成獏裝 立體圖。 分離 圖7係用以說明本發明第1實施形 氣體或沖洗氣體之流動樣態的圖式 態之成膜裴置中 圖8係本發明第1實 立體圖。 施形態之成縣置的部份刮面Fig. 3 is a cross-sectional plan view of the film forming apparatus according to the first embodiment of the present invention. 4A and 4B are longitudinal cross-sectional views showing a film formation and processing region and a separation region in the first embodiment of the present invention. A partial longitudinal section Fig. 5 is a plan view of a film forming apparatus according to a first embodiment of the present invention. Fig. 6 is a perspective view of the armor according to the first embodiment of the present invention. Separation Fig. 7 is a view showing a film formation of a flow pattern of a gas or a flushing gas of the first embodiment of the present invention. Fig. 8 is a first perspective view of the present invention. Partial shaving surface of the county
的控制部之 置所進行之 置中進行排 圖9係本發明第1實施形態之成膜裝置 一範例的概略圖。 圖10係本發明第1實施形態之成膜裝 整體處理製程的一範例之製程流程圖。 圖11係本發明第1實施形態之成膜震 84 201025480 氣流量調料_ — _之製程流程圖。 圖12A、圖12B、圖12C係本發明第1實施形態之 成膜裝置的排氣通道所流通之氣體流量等的概略模式 圖。 圖13係調整本發明第1實施形態之排氣通道所流 通之氣體流量時的樣態之概略圖。 圖14A、圖14B係本發明第1實施形態於處理中真 空容器内部壓力等之概略特性圖。 圖15係說明本發明第1實施形態中藉由分離氣體 來分離第1反應氣體及第2反應氣體並進行排氣之樣態 的圖式。 圖16係本發明第2實施形態之成膜裝置的一範例 之概略圖。 圖17係本發明第2實施形態中進行排氣流量調整 製程的一範例之製程流程圖。 圖18係本發明第2實施形態之成膜裝置的其他範 例之概略圖。 19A、圖19B係說明本發明第2實施形態之分離區 域所使用之凸狀部的尺寸範例之說明圖。 圖20係本發明第2實施形態之分離區域的其他範 例之縱剖面圖。 圖21A、圖21B、圖21C係本發明第2實施形態之 分離區域所使用之凸狀部的其他範例之縱剖面圖。 圖22係本發明其他實施形態之成膜震置的橫剖俯 85 201025480 視圖。 圖23係本發明其他實施形態之成膜裝置的橫剖俯 視圖。 圖24係本發明其他實施形態之成膜裝置内部的概 略構成立體圖。 圖25係本發明其他實施形態之成膜裝置的橫剖俯 視圖。 圖26係本發明其他實施形態之成膜裝置的縱剖面 圖。 圖27係使用了本發明之成膜裝置的基板處理系統 之一範例的概略俯視圖。 圖28係本發明其他實施形態之成膜裝置的縱剖面 圖。 圖29係本發明其他實施形態之控制部的一範例之 模式圖。 圖30係本發明其他實施形態處理基板之流程的製 程流程圖。 圖31係本發明其他實施形態處理基板之流程的製 程流程圖。 圖32係本發明第3實施形態之成膜裝置的縱剖面 圖34中I-I’線的縱剖面圖。 圖33係本發明第3實施形態之成膜裝置内部的概 略構成立體圖。 圖34係本發明第3實施形態之成膜裝置的橫剖俯 86 201025480 視圖。 圖35A、圖35B係本發明第3實施形態之成膜裂置 中處理區域及分離區域的縱剖面圖。 圖36係本發明第3實施形態之成膜裝置中分離區 域的縱剖面圖。 圖37係本發明第3實施形態之成膜裝置的反應氣 體喷嘴之立體圖。 圖38係說明本發明第3實施形態之成膜裝置中分 離氣體或沖洗氣體之流動樣態的圖式。 圖39係本發明第3實施形態之成膜裝置的部份剖 面立體圖。 圖40係將排氣系統設置於本發明第3實施形雜之 成膜裝置之樣態的橫剖俯視圖。 ' 圖41說明係本發明第3實施形態中藉由分離氣體 來分離第1反應氣體及苐2反應氣體而進行排氣之樣熊、 的圖式。 圖42係本發明第3實施形態之成膜裝置的變形例 之橫剖俯視圖。 圖43A、圖43B係說明本發明第3實施形態之分離 區域所使用之凸狀部的尺寸範例之圖式。 圖44係本發明其他實施形態之成膜裝置的橫剖俯 視圖。 圖45係本發明其他實施形態之成膜裝置的橫剖俯 視圖。 87 201025480 圖 圖46係本發明其他實施形態之成膜褽置 的縱剖面 圖47係使用了本發明成膜裴置之基板 其他範例之概略俯視圖。 μ 統的 【主要元件符號說明】 1 真空容器 2 迴轉台 4 凸狀部 5 突出部 6 彎曲部 7 加熱器單元 10 搬送手臂 11 頂板 12 容器本體 13 Ο型環 14 底面部 15 搬送口 16 昇降銷 20 殼體 21 軸心部 22 迴轉軸 23 驅動部 24 凹部 31 第1反應氣體喷嘴 32 第2反應氣體喷嘴 31a、 32a、41a、42a 氣體導入埠 31b、 32b、41b、42b 供給管 36a、 36b、36c、.36d、36e 、36f 閥門 37a、37b、37c、37d、37e、37fFig. 9 is a schematic view showing an example of a film forming apparatus according to the first embodiment of the present invention. Fig. 10 is a flow chart showing an example of a process for the overall processing of the film-forming apparatus according to the first embodiment of the present invention. Fig. 11 is a flow chart showing the process of film formation of the first embodiment of the present invention 84 201025480 air flow seasoning ___. Figs. 12A, 12B, and 12C are schematic diagrams showing the flow rate of gas and the like which flow through the exhaust passage of the film forming apparatus according to the first embodiment of the present invention. Fig. 13 is a schematic view showing a state in which the flow rate of the gas flowing through the exhaust passage of the first embodiment of the present invention is adjusted. Figs. 14A and 14B are schematic diagrams showing the internal pressure and the like of the vacuum container during the treatment according to the first embodiment of the present invention. Fig. 15 is a view showing a state in which the first reaction gas and the second reaction gas are separated by a separation gas and exhausted in the first embodiment of the present invention. Fig. 16 is a schematic view showing an example of a film forming apparatus according to a second embodiment of the present invention. Fig. 17 is a flow chart showing an example of a process for performing an exhaust gas flow rate adjustment process in the second embodiment of the present invention. Fig. 18 is a schematic view showing another example of the film forming apparatus of the second embodiment of the present invention. 19A and 19B are explanatory views showing examples of the dimensions of the convex portions used in the separation region according to the second embodiment of the present invention. Fig. 20 is a longitudinal sectional view showing another example of the separation region in the second embodiment of the present invention. Figs. 21A, 21B, and 21C are longitudinal cross-sectional views showing other examples of the convex portions used in the separation region according to the second embodiment of the present invention. Fig. 22 is a cross-sectional view of the film forming apparatus according to another embodiment of the present invention. Figure 23 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention. Fig. 24 is a perspective view showing a schematic configuration of the inside of a film forming apparatus according to another embodiment of the present invention. Figure 25 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention. Figure 26 is a longitudinal sectional view showing a film forming apparatus according to another embodiment of the present invention. Fig. 27 is a schematic plan view showing an example of a substrate processing system using the film forming apparatus of the present invention. Figure 28 is a longitudinal sectional view showing a film forming apparatus according to another embodiment of the present invention. Fig. 29 is a schematic view showing an example of a control unit according to another embodiment of the present invention. Figure 30 is a flow chart showing the process of processing a substrate in another embodiment of the present invention. Figure 31 is a flow chart showing the process of processing a substrate in another embodiment of the present invention. Figure 32 is a longitudinal cross-sectional view taken along line I-I' of the film forming apparatus of the third embodiment of the present invention. Fig. 33 is a perspective view showing a schematic configuration of the inside of a film forming apparatus according to a third embodiment of the present invention. Fig. 34 is a cross-sectional view showing the film forming apparatus according to the third embodiment of the present invention. 35A and 35B are longitudinal cross-sectional views showing a treatment region and a separation region in a film formation process according to a third embodiment of the present invention. Figure 36 is a longitudinal sectional view showing a separation region in a film forming apparatus according to a third embodiment of the present invention. Fig. 37 is a perspective view showing a reaction gas nozzle of the film forming apparatus of the third embodiment of the present invention. Fig. 38 is a view for explaining a flow pattern of a separation gas or a flushing gas in the film forming apparatus of the third embodiment of the present invention. Figure 39 is a partially cutaway perspective view showing a film forming apparatus according to a third embodiment of the present invention. Fig. 40 is a cross-sectional plan view showing a state in which the exhaust system is provided in the film forming apparatus of the third embodiment of the present invention. Fig. 41 is a view showing a sample of a sample bear that is exhausted by separating a first reaction gas and a ruthenium 2 reaction gas by separating gas in the third embodiment of the present invention. Figure 42 is a cross-sectional plan view showing a modification of the film forming apparatus of the third embodiment of the present invention. Figs. 43A and 43B are views showing an example of the size of a convex portion used in the separation region according to the third embodiment of the present invention. Figure 44 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention. Figure 45 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention. 87. Fig. 46 is a longitudinal sectional view of a film formation apparatus according to another embodiment of the present invention. Fig. 47 is a schematic plan view showing another example of a substrate on which a film formation apparatus of the present invention is used. [Main component symbol description] 1 Vacuum container 2 Turntable 4 Convex portion 5 Projection portion 6 Bending portion 7 Heater unit 10 Transfer arm 11 Top plate 12 Container body 13 Ο-ring 14 Bottom portion 15 Transport port 16 Lift pin 20 Case 21 Shaft portion 22 Rotary shaft 23 Drive portion 24 Recessed portion 31 First reaction gas nozzle 32 Second reaction gas nozzles 31a, 32a, 41a, 42a Gas introduction ports 31b, 32b, 41b, 42b Supply pipes 36a, 36b, 36c, .36d, 36e, 36f valves 37a, 37b, 37c, 37d, 37e, 37f
33 喷出孔 38a 39 氣體供給系統 40 41、42分離氣體喷嘴 43 44 第1頂面 45 流量調整部 38b、38c氣體供給源 喷出孔 溝部 第2頂面 88 201025480 Ο33 Discharge hole 38a 39 Gas supply system 40 41, 42 Separation gas nozzle 43 44 First top surface 45 Flow rate adjustment unit 38b, 38c Gas supply source Discharge hole Groove part Second top surface 88 201025480 Ο
46 彎曲部 47 流通室 50 狹窄間隙 51 分離氣體供給管 52 空間 60、 61、62 排氣口 63a 、63b、63c 排氣通道 65a、 65b、65c 閥門 64 > 64a、64b、64c 真空泵 66a 、66b 、 66c 處理壓力檢測機構 67a - • 67b 、 67c 壓力檢測機構 72、 73、74、75 沖洗氣體供給管 68 變流器 71 遮蔽組件 80 控制部 81 CPU 82 記憶體 83 處理程式 84 工作記憶體 85 記憶部 86 計時器 91 第1處理區域 92 第2處理區域 100 收納空間 100a 凹部 101 支柱 102 迴轉套筒 103 馬達 104 、105齒輪部 106、 107、108 軸承部 111 晶圓盒 112 大氣搬送室 113 搬送手臂 114、 115 加載互鎖室 116 真空側搬送室 117a 、117b 搬送手臂 118， > 119成膜裝置 310 第3反應氣體噴嘴 410 分離氣體喷嘴 W 晶圓 200 控制部 201 真空容器 202 迴轉台 204 凸狀部 89 201025480 ϊ 205 突出部 206 彎曲部 207 加熱器單元 210 搬送手臂 211 頂板 212 容器本體 213 0型環 214 底面部 215 搬送口 216 昇降銷 220 殼體 221 抽心部 222 迴轉轴 223 驅動部 224 凹部 231 第1反應氣體喷嘴 232 第2反應氣體喷嘴 233 喷出孔 231a 、232a、241a、 242a 氣體導入埠 240 喷出孔 241 > 242分離氣體喷嘴 243 溝部 244 第1頂面 245 第2頂面 246 彎曲部 250 狹窄間隙 251 分離氣體供給管 252 空間 261 ' 262 排氣口 263a 、263b、263c 排氣通道 264a 、264b、264c 真空泵 265a 、265b、265c 閥門 271 遮蔽組件 266a 、266b、266c 處理壓力檢測機構 267a 、267b、267c 壓力檢測機構 272、 273、274、275 沖洗氣體供給管 280 收納空間 280a 凹部 281 支柱 282 迴轉套筒 283 馬達 284 驅動齒輪部 285 齒輪部 286、 287、288 軸承部 201025480 291 搬送容器 292 大氣搬送室 293 搬送手臂 294'295 加載互鎖室 296 真空側搬送室 297a、297b 搬送手臂 298 、299成膜裝置46 Bending portion 47 Flow chamber 50 Narrow gap 51 Separation gas supply pipe 52 Space 60, 61, 62 Exhaust ports 63a, 63b, 63c Exhaust passages 65a, 65b, 65c Valve 64 > 64a, 64b, 64c Vacuum pumps 66a, 66b 66c processing pressure detecting mechanism 67a - • 67b, 67c pressure detecting mechanism 72, 73, 74, 75 flushing gas supply pipe 68 converter 71 shielding unit 80 control unit 81 CPU 82 memory 83 processing program 84 working memory 85 memory Part 86 Timer 91 First processing area 92 Second processing area 100 Storage space 100a Recession 101 Pillar 102 Slewing sleeve 103 Motor 104, 105 Gear unit 106, 107, 108 Bearing unit 111 Wafer 112 Air transfer chamber 113 Transport arm 114, 115 load lock chamber 116 vacuum side transfer chambers 117a, 117b transfer arm 118, > 119 film forming apparatus 310 third reaction gas nozzle 410 separation gas nozzle W wafer 200 control unit 201 vacuum container 202 turret 204 convex Department 89 201025480 ϊ 205 protrusion 206 bending part 207 heater unit 210 transport arm 211 top plate 212 container Body 213 0-ring 214 bottom portion 215 transport port 216 lift pin 220 housing 221 core portion 222 rotary shaft 223 drive portion 224 recess 231 first reaction gas nozzle 232 second reaction gas nozzle 233 discharge holes 231a, 232a, 241a 242a gas introduction 埠 240 discharge hole 241 > 242 separation gas nozzle 243 groove portion 244 first top surface 245 second top surface 246 curved portion 250 narrow gap 251 separation gas supply pipe 252 space 261 ' 262 exhaust ports 263a, 263b 263c exhaust passage 264a, 264b, 264c vacuum pump 265a, 265b, 265c valve 271 shielding assembly 266a, 266b, 266c processing pressure detecting mechanism 267a, 267b, 267c pressure detecting mechanism 272, 273, 274, 275 flushing gas supply pipe 280 Space 280a recess 281 struts 282 swivel sleeve 283 motor 284 drive gear portion 285 gear portion 286, 287, 288 bearing portion 201025480 291 transport container 292 air transfer chamber 293 transport arm 294'295 load lock chamber 296 vacuum side transfer chamber 297a, 297b Transfer arm 298, 299 film forming device
G ❹ 91G ❹ 91
Claims (1)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008222723 | 2008-08-29 | ||
| JP2008222728A JP5195174B2 (en) | 2008-08-29 | 2008-08-29 | Film forming apparatus and film forming method |
| JP2009165984A JP5195676B2 (en) | 2008-08-29 | 2009-07-14 | Film forming apparatus, substrate processing apparatus, film forming method, and storage medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201025480A true TW201025480A (en) | 2010-07-01 |
| TWI437654B TWI437654B (en) | 2014-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98128930A TWI437654B (en) | 2008-08-29 | 2009-08-28 | Film deposition apparatus, substrate processing apparatus, and film deposition method |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI437654B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119392213A (en) * | 2024-10-30 | 2025-02-07 | 柔电（武汉）科技有限公司 | A method and device for continuous atomic layer and molecular layer deposition |
-
2009
- 2009-08-28 TW TW98128930A patent/TWI437654B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119392213A (en) * | 2024-10-30 | 2025-02-07 | 柔电（武汉）科技有限公司 | A method and device for continuous atomic layer and molecular layer deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI437654B (en) | 2014-05-11 |
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