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TW200943453A - Plasma processing apparatus and outside air isolation container - Google Patents

Plasma processing apparatus and outside air isolation container

Info

Publication number
TW200943453A
TW200943453A TW97141763A TW97141763A TW200943453A TW 200943453 A TW200943453 A TW 200943453A TW 97141763 A TW97141763 A TW 97141763A TW 97141763 A TW97141763 A TW 97141763A TW 200943453 A TW200943453 A TW 200943453A
Authority
TW
Taiwan
Prior art keywords
gas
gap
processing apparatus
outside air
plasma processing
Prior art date
Application number
TW97141763A
Other languages
Chinese (zh)
Inventor
Tadahiro Ohmi
Takaaki Matsuoka
Original Assignee
Tokyo Electron Ltd
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007288022A external-priority patent/JP2011040417A/en
Priority claimed from JP2007288021A external-priority patent/JP2011040416A/en
Application filed by Tokyo Electron Ltd, Univ Tohoku filed Critical Tokyo Electron Ltd
Publication of TW200943453A publication Critical patent/TW200943453A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Furnace Details (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

A dual layer of sealing materials is provided in a ring shape at the contact surface between a container protrusion section of a processing container and a lid protrusion section of a lid. In the container protrusion section, in the gap formed between the sealing materials, are formed a gas inlet port for introducing an inert gas, and a gas outlet port for discharging the inert gas through the gap. The gas inlet port and the gas outlet port are arranged facing each other. The inert gas that enters through the gas inlet port flows towards the gas outlet port, filling the gap between the sealing materials. The air-tightness of the processing container is maintained by this layer of inert gas filling the gap.
TW97141763A 2007-11-06 2008-10-30 Plasma processing apparatus and outside air isolation container TW200943453A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007288022A JP2011040417A (en) 2007-11-06 2007-11-06 Plasma processing apparatus and external air shielding vessel
JP2007288021A JP2011040416A (en) 2007-11-06 2007-11-06 Plasma processing apparatus and external air shielding vessel

Publications (1)

Publication Number Publication Date
TW200943453A true TW200943453A (en) 2009-10-16

Family

ID=40625650

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97141763A TW200943453A (en) 2007-11-06 2008-10-30 Plasma processing apparatus and outside air isolation container

Country Status (2)

Country Link
TW (1) TW200943453A (en)
WO (1) WO2009060756A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2292953A1 (en) * 2009-09-07 2011-03-09 Fei Company High-vacuum seal
CN101881335B (en) * 2010-03-23 2012-02-01 东莞宏威数码机械有限公司 Sealing device for multi-layer rubber sealing ring
JP2011256946A (en) * 2010-06-09 2011-12-22 Tohoku Univ Pressure-reducible processing apparatus
DE102010050258A1 (en) * 2010-11-02 2012-05-03 Hq-Dielectrics Gmbh Apparatus for treating substrates
US20130337171A1 (en) * 2012-06-13 2013-12-19 Qualcomm Mems Technologies, Inc. N2 purged o-ring for chamber in chamber ald system
JP2014114849A (en) * 2012-12-07 2014-06-26 Ihi Corp Seal mechanism of double seal part
FI126927B (en) * 2016-06-09 2017-08-15 Janesko Oy Sealing arrangement for a measuring device and sealing method
CN120366735A (en) * 2019-05-22 2025-07-25 朗姆研究公司 Vapor reservoir for corrosive gases with scavenging
US11479859B2 (en) * 2020-04-09 2022-10-25 Applied Materials, Inc. High temperature vacuum seal
CN114597108A (en) * 2020-12-04 2022-06-07 中国科学院微电子研究所 A semiconductor manufacturing equipment and its processing chamber and gas generating device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312074A (en) * 1988-06-10 1989-12-15 Fujitsu Ltd Load locking device of semiconductor treating device
JP2000106298A (en) * 1998-09-28 2000-04-11 Tokyo Electron Ltd Plasma processing unit
JP2001015440A (en) * 1999-06-28 2001-01-19 Hitachi Kokusai Electric Inc Semiconductor manufacturing method and apparatus
JP2003003263A (en) * 2001-06-20 2003-01-08 Mitsubishi Heavy Ind Ltd Plasma cvd system
JP2004319871A (en) * 2003-04-18 2004-11-11 Advanced Lcd Technologies Development Center Co Ltd Processor, processing method and plasma processor

Also Published As

Publication number Publication date
WO2009060756A1 (en) 2009-05-14

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