TW200933938A - Light emitting diode - Google Patents

Abstract

A semiconductor light emitting diode (1) comprises a first and a second electrode for applying a voltage across an active region (4) for generation of light, and a light emitting surface (6) for emitting the light. The LED further comprises a first and a second light guiding means (201, 202, 203). Furthermore, a first sub-electrode (41, 42, 43, 44, 45) is associated with the first light guiding means (201, 202, 203) and a second sub-electrode (41, 42, 43, 44, 45) is associated with the second light guiding means (201, 202, 203). The first and second sub-electrodes (41, 42, 43, 44, 45) are individually controllable by means of applying a respective voltage to each of the first and second sub-electrodes (41, 42, 43, 44, 45).

Description

200933938 IX. Description of the Invention: Technical Field The present invention relates to a semiconductor light emitting diode comprising: a first electrode and a first electrode for straddle a first type of semiconductor layer • applying a voltage to an active region between the second type of semiconductor layer for generating light; and a light emitting surface for emitting the light. [Prior Art] ❿ In today's modern society, the use of visible light emitting diodes is widely used. Applications for light-emitting diodes include illuminated signs (such as exit signs or emergency signs), lights for vehicles (such as brake lights), backlighting for large video displays, and lighting systems for home use (such as storage racks) ). However, due to the fact that the emission angle of a general light-emitting diode is wide, the use of a light-emitting diode for applications similar to a projection light source or a car headlight is growing more slowly. For these applications, one of the sources of highly collimated light is required. φ In addition, efforts are currently being made to improve lumen efficiency and higher efficiency for each package of LEDs. It is expected that in the near future, 400 lumens of white LED packages that consume only 4 W and have a size of 1 to 2 mm2 will be commercially available. This will make LEDs more attractive for use in general lighting applications. However, even though LEDs are a very compact source, for most applications it is still necessary for complex secondary optics and/or other beam shaping devices to adequately address the needs of different lighting applications. The prior art LED includes a first electrode, an N-type semiconductor layer, a p^•semiconductor layer, and a second electrode. An active region is formed between the N-type semiconductor layer and the p-type semiconductor 136497.doc 200933938 layer. Further, the first electrode is connected to the layer and the second electrode is connected to the p-type layer. One of the LEDs has a light emitting surface on the opposite side of the layer of the pattern compared to the active area. In the second t-pole, a hole or channel is formed. The holes or channels are interspersed on the second electrode. Through the holes or channels, the current is conducted (not in contact with the second electrode) to the first electrode. In this way, an improved current spread across the first electrode is achieved. 0 Prior art LEDs - the disadvantage is that it is difficult to use for many * same applications - the type of LED 'because for the specific application of a particular type of beam shape (or beam angle), it is generally necessary to add adaptation by A secondary optical element for the particular LED to optimize the beam from the LED. Unfortunately, the shape of the beam from an LED with one of the secondary optics may not be suitable for other applications. Thus, many types of LEDs with different secondary optical components can be incorporated into one of the LED illumination systems to meet the needs of more than one application. Therefore, there is a need for LEDs that are capable of dynamically providing beam angles and beam shapes of different φ types. SUMMARY OF THE INVENTION One object of the present invention is to alleviate at least some of the problems of the prior art described above. This object is met by a light-emitting diode as in the independent item 1 of the patent application. Specific embodiments are defined in separate items of the scope of such claims. According to an aspect of the present invention, a semiconductor light emitting diode (LED) is provided, comprising: a first electrode and a second electrode for straddle a 136497.doc 200933938 for an emission area for emission The light guiding member of the second electrode active region of the second light guiding layer is used to generate light by controlling a voltage between the first type of the body layer and the second type of the conductor layer from the state. And a light-emitting surface, which is: light: in addition, the LED includes a -th-lightguide member and a first system disposed between the light-emitting surface and the active region. The sub-electrode comprising is disposed on an opposite side of the light-emitting surface, wherein the -first sub-electrode is associated with the first and the second sub-electrode is associated with the second photoconductive member. The first sub-electrode and the second sub-electrode may be separately controlled by applying an individual voltage to the first sub-electrode and the second sub-electrode, thereby being caused by light emission of the first light guiding member and the second light guiding member. The light emission of the LED is activated. One concept of the present invention is to provide an LED having a segment containing a light guiding member for extracting light therefrom. Thus, for example, the shape of the emitted beam and the angular distribution of the emitted beam are determined. In addition, the means for directing light can affect the properties of the light generated in the active area of the LED, such as color, beam angle, intensity, etc., from the emission of the LED. The LED further includes an electrode disposed on an opposite side of the active layer compared to the light guiding member. Further, the electrode includes a sub-electrode configuration and each sub-electrode configuration is associated with at least one light guiding member, such that Activation of a particular sub-electrode configuration results in light emission from the associated at least one light guiding member. For example, the type of emission from the LED can be controlled by applying a voltage to one of the electrode configurations (sub-electrodes) associated with the light guiding member and closing all other electrode configurations associated with the light guiding member. In a specific embodiment of the light-emitting diode according to the present invention, the preferred system is 136497.doc 200933938

The first light guiding member belongs to the first type and the second light guiding member belongs to a second type. The first type of light guiding member can be different from the second type of light guiding member because the firing from the (four) guiding members is different. For example, collimated light may be emitted for any optical property n type and (4) two types may emit divergent light, the first type may emit red light and the second type may emit blue light, and the like. In this way, the coffee can dynamically (without hardware changes) provide different types of beam shapes, such as a type of beam shape for reading (using collimated light) and another type for watching television. Beam shape (using wide emission). Some beam shapes can even direct the emission to the side that does not have any light in the direction for one of the normals of the led. It should be noted that the term "photoconductive member" means a member comprising a guiding member for providing color (color filter) and/or a light modifying member, that is, any property for influencing light emitted by the LED. Other components. In other embodiments of the LED according to the present invention, the color of the emitted light can be controlled, e.g., from red to blue. Due to the towel, a large change from the emission field of the LED is dynamically obtained by applying a voltage to the +-sub-electrode. In addition, the sub-electrode configurations are associated with a number of active sub-regions (or sub-action regions). These active sub-regions can produce light immediately after a voltage is applied thereto. Different parts of the active area are activated by selecting (initiating) different sub-electrode configurations. It should be noted that different types of light emission may represent different light field types, + same intensity, different colors, different far field modes of the emitted light. And/or the like. 136497.doc 200933938 In a specific embodiment of the LED according to the present invention, the light guiding member comprises a color filter, a color conversion device, a color region, a region covered with a luminescent material, a photonic crystal (having a different At least one or a combination of beam shaping properties. For example, when a group or individual segments having color transitions are provided, color mixing can be performed electrically. Compared to using a remote phosphor for color generation, brightness can be used. Less to reduce the mixing of the colors. This is because a color conversion unit is close to a light source configuration and can define the light surface of the light In addition, the heat transfer from the active zone can be improved. This can be achieved, for example, by activating only a portion of the entire active area that produces light. A portion of the active area, which is referred to as an active site and does not produce light, may be referred to as a deactivated site (the associated sub-electrode is deactivated, i.e., no voltage is applied). When the active site is driven to illuminate, it also generates heat. This heat can be dissipated in the surrounding deactivation site, which thus provides regional heat dissipation. In this way, it can be compared to when all sub-electrode systems are addressed and there is no deactivation 以° position for providing regional heat dissipation. A higher current is transmitted through the starting portion. In a specific embodiment of the LED according to the present invention, it is preferred to match the size and shape of the sub-electrodes to the size and shape of the individual light guiding members. In a way, it is possible to provide easier and more predictable control of the emission. It should be noted that some of the electrodes may be associated with a surface area of one of the LEDs that do not comprise a light guiding member. Another specific aspect of the LED according to the invention In an embodiment, the size and shape of the segments of the sub-electrodes and/or the light guiding members can be arbitrarily selected (the size of the segments is 136497.doc 200933938. The minimum size of a segment depends on the type of the light guiding member. For example, if the = guiding member Including a photonic crystal, the minimum size depends on the parent interaction length of the particular photon 。a body. For the case of a photonic crystal, the light guiding member may comprise a light guiding member. Preferably, the shape of the segments may belong to, A town-like shape, such as a rectangle, a triangle, a square shape, or a combination thereof. • A good system, the segments have the same shape. In general, the segments belong to a rectangular shape to facilitate the process. ❹ In accordance with the present invention In another specific embodiment of the LED, the second type of semiconductor layer disposed on the opposite side of the active region compared to the light emitting surface is divided into sub-elements, each sub-element being associated with a corresponding sub-electrode. Preferably, each sub-element is aligned with a corresponding sub-electrode. Advantageously, an improved separation between the zones of action for generating light is achieved. In other embodiments of the LED according to the present invention, the first type of semiconductor layer is an N-type semiconductor layer and the second type of semiconductor layer is a p-type semiconductor layer. Advantageously, because the N-type material is generally one of the current conductors better than the p-type semi-conductive semiconductor material, a current that extends over the overall active region is achieved and thus the entire illuminated top surface can be used to generate and extract Light. Further, the N-type layer may be disposed between the active region of the LED and the light-emitting surface, and the P-type layer may be disposed on the opposite side of the active region compared to the N-type layer. Alternatively, in a specific embodiment of the LED according to the present invention, the first type semiconductor layer is a P type semiconductor layer and the second type semiconductor layer is an N type semiconductor layer. 136497.doc 200933938 Furthermore, the light guiding members can be disposed adjacent to each other for continuously covering at least a portion of the light emitting surface of the LED with the light guiding member. Advantageously, the effect of the light guiding member is maximized in this manner. The application of the light guiding member (though not necessarily in a continuous manner) is a key factor for obtaining different types of emissions from different regions of the light emitting surface of the LED.

According to another embodiment of the present invention, a semiconductor light emitting diode (LED) is provided, wherein the light guiding member comprises a plurality of photonic crystals. Furthermore, at least two photonic crystal systems selected among the plurality of photonic crystals are adapted to extract light from the active region and differ from each other with respect to at least one lattice parameter, each of the at least two photonic crystals being related Connected to a different field type. Further 'providing one of the plurality of photonic crystals to configure the at least two photonic crystals such that the individual far field patterns associated with each of the at least two photon b bodies are combined to establish One of the light generated in the led is an overall far field pattern. In a particular embodiment in which the LED comprises a photonic crystal, the far field pattern of the LED can be dynamically controlled by activating the selected sub-electrode. In the above specific embodiment of the LED according to the present invention, there is provided a light-emitting diode having a light-emitting region (surface) which is divided into one sub-region. At least some of the sub-regions have different photonic crystals (pc), which differ in their individual lattice parameters (including lattice type, lattice spacing, filling fraction, and lattice orientation) as described below. At least one of them is different from each other. This sub-area is used as a precursor to many different , _ _ _, each of which has a different radiation field (or radiation field). In the far field, the different _field type of the corresponding light source (photonic crystal) is combined with each of the figures 136497.doc 200933938, which is issued with one of the same photonic crystals (for example) - The far field field type may have a modified uniformity, or may have a collimated light emission with improved symmetry. In other words, according to one embodiment of the present light-emitting diode, an LED comprising two different types of photonic crystals is provided. Two photonic crystal systems that differ from each other with respect to at least one crystal parameter are considered to belong to different types. Different types of photonic crystals form one configuration of photonic crystals that are configured such that the overall far field pattern ratio of light emitted from the LED is associated with individual far field patterns of different types of photonic crystals Each is more even. In this way, the effect of the darker and/or more bright spots, points and/or the like (hereinafter referred to as the irregularities of the far field pattern) is reduced. ^ It has been observed that prior art LEDs with pc The irregularities in the far field patterns are due to the regular distribution of the cavities (holes) in the photonic crystals. Furthermore, it should be noted that these irregularities correspond to symmetry steepness in the pattern of the photonic crystal. Thus, there is a need to break the regularity of the distribution of such holes in such PCs, as illustrated by the disclosure of such application. Thus, one of the advantageous effects of the light-emitting diode according to the above-described embodiments of the present invention is that it provides light emission, and the far-field radiation pattern of the light emission can have a modified uniformity or a photonic crystal display having only one type. Fewer spots (irregular). Another advantage of the LEDs described above in accordance with an embodiment of the present invention is that a number of different far field radiation patterns can be designed to secure a number of optimized photonic crystals as desired for any particular application. A different design can be obtained by selecting one of the photonic crystals of the LED (i.e., changing the position of the photonic crystals) to obtain 136497.doc • 13- 200933938. For example, for backlight applications, it is desirable to provide an LED that has a normal to one of the LEDs. With 8 baht. The main body of the launch between. It should be noted that the photonic crystals may be formed as part of the I conductor layer closest to the light emitting surface. The photonic crystal layer can extend from the light emitting surface through the semiconductor layer closest to the light emitting surface and possibly also through the active region. Furthermore, the photonic crystal layer can be extended into the semiconductor layer at the opposite side of the active region compared to the light emitting surface φ of the LED. However, the photonic crystals may also be formed in a separate layer from the semiconductor layer closest to the light emitting surface. In general, a photonic crystal contains one of a hole, a column, and/or a similar crystal lattice. In the following (and above) description, the reference to the hole is intended to be a hole and/or a column and/or the like. In some embodiments, the photonic crystals can comprise quasi-photonic crystals. Furthermore, in some other embodiments, the light emitting surface of the LED may further comprise a roughened emitting surface of the LED, in such a manner that the roughened surface provides a uniform background emission which is reduced by the photonic crystal The contrast between the darker and brighter areas in the far field. In one embodiment of the LED according to the present invention, the preferred configuration of the photonic crystals is configured (positioned or set) in a random manner for different photonic crystals. Additionally or alternatively, the configuration can configure the different photonic crystals in a manner that varies (relative to at least one of the lattice parameters). For example, a lattice function can be changed from one photonic crystal to another (adjacent) photonic crystal according to a linear function (or any type and/or one of the order functions) such that far from the light emitted by the LED is %% The uniformity is improved. Furthermore, the configuration of the photonic crystal 136497.doc • 14-200933938 may additionally or alternatively dispose different types of photonic crystals in the illuminating surface non-periodically (more specifically, between the active area and the illuminating surface) Within the semiconductor layer), thereby improving the far field pattern from a combination of one of the different photonic crystals, ie there are fewer or reduced spots or the like. In a specific embodiment of the LED according to the present invention, the configuration is configured to position at least two different types of the photonic crystals in an irregular manner within the illuminating surface. Thus, it has been observed that Configuring the different photonic crystals within the illuminating region _ (surface) (preferably irregularly as described above) to obtain an overall far field pattern of light emitted from the LED having an increased uniformity such that The different far-field modes of the associated different photonic crystals are associated with an irregular (brighter or darker spot or point or circle) of one of the far field modes of one photonic crystal relative to the other. The irregularity of the far-field pattern of the crystal (brighter or darker spots or dots or circles) occurs at different locations (or the far-field pattern of the photonic crystal associated with the expression in a different way should be better) One mode interaction with respect to its individual spatial extension, at least partially non-e correspondence). In other words, the far field modes associated with the photonic crystals should preferably be at least slightly non-in phase with each other. In a further embodiment of the LED according to the invention, it may be necessary to position (configure or set) different types of photonic crystals in a regular manner. It should be noted that the brighter and/or darker spots in the far field pattern from the photonic crystals must overlap sufficiently, e.g., to provide a transmitted power at a solid angle within a particular range. For example, when photonic crystals of different lattice types (eg, hexagonal or triangular lattices) are used, the spots in the far field patterns may overlap and thus exhibit less and/or less differences ( Fuzzy) 136497.doc 15 200933938 One of the far field types of irregularities (light spots, etc.). Furthermore, the lattice parameters may be either lattice orientation, lattice spacing, lattice type or fill fraction, or a combination thereof. It should be noted that the term "lattice parameters include lattice orientation" means that if two photonic crystal systems are oriented differently, 'Bei are different (or different) even if they have the same pitch, fill fraction and lattice type. Type). For example, the photonic crystals may have the same or similar short procedure, but slightly different pitches, or have the same or similar inter-φ distance, but different fill fractions. Furthermore, the photonic crystal vessels may have the same ( Or similar) spacing and shape, but differing depending on the type of lattice, ie the hexagonal structure is different from the triangular (or cubic) lattice structure. It should be observed that some photonic crystals may have the same lattice parameters, ie no such All of the photonic crystals of the LED have at least one different lattice parameter. It should be understood that the term "filling fraction" means the size of the photonic crystal component (e.g., a hole, column or the like), i.e., from a photonic crystal to The diameter of a different hole in another photonic crystal. Typically, the φ diameter of the holes (or columns) for visible light is in the range of 30 nm to 700 nm. The distance between a photonic crystals (or lattice constant) is defined as the distance from the center of a hole (or column or the like) to the center of an adjacent hole in the crystal lattice of the photonic crystal. For visible light, this distance is usually in the range from 8 nanometers to 8 nanometers. In general, the optimum pitch (or lattice spacing) increases with the wavelength of the emitted light. In a specific embodiment of the LED according to the present invention, the LED (or the gap between the pillars) can be changed by filling a hole (or a gap between the pillars) in the conductor material with a refractive index different for the air and the semiconductor material. The spacing is filled with 136497.doc •16·200933938 Titanium. By (porous) soil, oxidation group, oxidation error and oxidation and filling fraction. The distance between the crystals of the ancestor of the ancestors can include hexagons + · a coincidence ~ the structure of the Hanzheng body structure The crystal structure of the Xu Xi type is known in the art, and

=== for use in a coffee shop in accordance with a particular embodiment of the present invention. The above-mentioned low i-structure u-angle structure, etc.) is not intended to be limited to these types of materials. Any low order structure can be employed. Higher order structures can also be used, such as to the ensemble structure or different types of Archimedes blocks. Even random crystal structures are available. Preferably, the lattice type provides a non-rotationally symmetric far field field. An example is similar to a quasi-crystal of a helical structure in a hollyhock, which is suitable for applications similar to beamers, LCD (liquid crystal display) backlights, and automotive headlamps. 6, it should be observed that in some embodiments, it is preferred to have a rotationally symmetric far field pattern. This is the case for applications similar to spotlights. Those skilled in the art will recognize that the various features of the present invention can be combined to form a specific embodiment of the present invention as defined by the accompanying claims. [Embodiment] In the following drawings, like reference numerals have been used in the In Fig. 1, an example of the operation of an LED crucible according to the present invention is shown. The LED 1 includes a non-conductive resistance barrier 5丨 from the bottom to the top, which is used for electrically separating the sub-electrodes 41 to 45, and a p-type semiconductor layer 3〇, which is connected to the sub-electrodes 136497.doc 17 200933938 Up to 45; an active region 4 for generating light; - an N-type layer 21' connected to an electrode configuration (not shown); and photoconductive segments 2〇1, 2〇2 and 203. The light guide segments may be of different color or all of the light guide segments may have the same color. In fact, there may be more than three slices & ' but for the sake of clarity only three segments are shown. Moreover, in Figure 1, the LED 1 includes secondary optical elements (not shown) for projecting light from the segments. The secondary optical component is used to reproduce (image) the magnified image of the light from the selected segment. By selecting segments of different groups, simple or shorter text can be projected onto, for example, a wall or the like. The LED 1 can be viewed as a very small and simple display device or projector device. Advantageously, the system does not waste light, i.e., all of the light systems produced are used to project the desired logo or text. In this example, the pilot segments 2〇1, 2〇2, 2〇3 are larger than the sub-electrodes 41 to 45. Referring to FIG. 2, one of the LEDs similar to one of the ones shown in FIG. 1 is more common. example. In this case, there is a one-to-one correspondence between the light guiding members 3〇1 to 3〇5 and the sub-φ electrodes 41 to 45. This enables the light guide segments to be more intuitively controlled because the activation of one sub-electrode causes a light guide segment (which in this case can be considered a pixel) to be activated. In another example of an LED similar to one of the ones shown in Figure 1, the light guide segments (201 to 203, 301 to 305) are smaller than the sub-electrodes 41 to 45. Thus, activation of one sub-electrode will cause more than one (e.g., two or one-half) lightguide segments to be activated. Any number of light guiding members can be activated as desired for a particular application. Referring to FIG. 2', another working example of LEO 1 according to the present invention is shown (because 136497.doc -18-200933938 匕 Figure 2 is used to illustrate different examples of the LED at the surface of the LED has been 301 to each segment A luminescent material is applied at 305. In this example, each segment has been applied with a different material, and the same material can be applied to two sheets. In general, at least two types of materials are required. The semiconductor layer, the electrode, and an active region are included as illustrated in the accompanying drawings. It should be noted that the sub-electrodes 41 to 45 are aligned with the segments 3〇1 to 305. The size and shape of the sub-electrodes are Matching the size and shape of the segment containing the luminescent material. When a voltage is applied to the sub-electrodes 41, 43, and 45 in FIG. 2, the light emitted from the corresponding luminescent materials 301, 303, and 305 will be omitted from the LED 1. Mixing. The color of light emitted from the LED 1 can be dynamically controlled by applying different levels of voltage to different sub-electrodes. In another working example of the LED according to the invention, there is a surface area of one mm 2 A 1 W standard LED system is used as a starting point. The surface area is divided into 25 segments. For a 1 mm2 led surface, each segment _ is approximately 200x200 M>m2. The segments are grouped into a first group of 12 segments and a second segment of 13 segments. a group of segments of a first group associated with a sub-electrode of a corresponding group. Likewise, a segment of the second group is associated with a sub-electrode of another corresponding group. Photonic crystals applied to the first group In this way, a spotlight of light from the segment of the first group is implemented. The segment of the second group is not modified. Switching between a segment of a group and a segment of a second group to obtain two different types of light emissions. For example, light from segments of the first group can be used for reading and from the second group The light of segment 136497.doc -19·200933938 can be used to illuminate a room as a whole. In addition, light from segments of the first group and segments of the second group can be activated to obtain segments from the two groups ( Illumination of light illumination containing pc) The examples in Figures 3 to 8 relate to an LED' in which the light guiding member comprises a photonic crystal. Even though not shown in Figures 6a to 6f, 7 and 8, the electrode system is divided into sub-electrodes in all of these examples. In this manner, wherein the electrode (farthest from the luminescent surface) is divided into sub-electrode systems is shown, for example, in Figures 3 and 4.

In Fig. 3, an example of a light emitting diode 1 (LED) comprising a semiconductor stack of epitaxial layers 21, 30 is shown. In this particular example, the semiconductor stack has a total thickness of 400 nanometers and is fabricated from GaN. The stack includes (from bottom to top according to FIG. 3) electrode layers 41 to 45, a p-type semiconductor layer 30 connected to the electrode layer, an active region 4, an N-type layer 2i, and the N-type layer 21 A second electrode (or electrode configuration, not shown) and a light-emitting region 6 are connected. Further, the electrode layer is horizontally divided into a plurality of sub-electrodes 41, 42 43 44, 45. In other words, the bottom reflective electrode layer is divided into a plurality of sub-electrode layers 41, 42, 43, 44, 45 which are separated by a non-conductive resistance barrier 51. The (4) 5 丨 from (and including) the bottom sub-electric (4) (4) extends upward (but not including) the p-type layer 3〇. The photonic crystals 101, 102 and 1〇3 in FIG. 3 are formed as quantum wells in the N-type layer 21 (the holes may increase the thickness of the photonic crystal layer (8), iG2 to extend into the dragon and/or to In the P-type layer, in this example t, the size (diameter) of the hole for the photonic crystal type ι〇ι in the N-type layer 21 is about 1 〇〇 nanometer and (4) the depth of the hole (10) nanometer. This method, preferably 136497.doc 200933938, uses the entire depth of the N-type layer for the holes and columns to fabricate the photonic crystals 101, 102 and 103. Therefore, the photonic crystal is preferred. The layer extends as far as possible into the N-type layer. For most applications, an N-type layer of less than one micron in thickness is required, which contains one photonic crystal structure of approximately the same depth.

❹ In Fig. 3, the lattice spacing of the photonic crystal of type 101 is 47 〇 nanometer. The size (diameter) of the holes for the other type of photonic crystal 1 〇 2 in the N-type layer is 120 nm and the depth of the holes is 25 Å. The lattice spacing of the type ι〇ι photonic crystal is 490 nm. The lattice type of photonic crystals ι〇1, 1〇2 is a hexagonal lattice type (the lattice type may be different for other examples). The regions of the photonic crystals have a hexagonal shape and have a diameter of about 50. One of the diameters of μι„ (not shown). Even if not shown, the number of photonic crystal regions on the LED of the figure is usually one of the light-emitting surfaces of the needle si my in the range from 50 to 2500. J-foot diameter system...% The N-W is used to activate different parts of the active area. Therefore, when the different parts of the active area are activated, different photonic crystal structures will be activated. In this way, the far field of the entire LED 1 can be dynamically controlled. Field type. As shown in Fig. 4, in another example of the coffee maker according to the present invention, the photon crystals have a size and shape of one of the size and shape of the dispensing sub-electrodes 41 to 45. In addition, the photonic crystal material is used. It is assumed that each photonic crystal corresponds to a matching sub-electrode. Since each sub-electrode having a corresponding active portion can be activated individually, an increased control of one of the far-field patterns is provided. In this example Type layer 21 contains the However, it should be noted that the J36497.doc •21·200933938 ι photon day body layer may extend into the active area and possibly also in layer 30. Referring to Figure 5, another working example of an LED! in accordance with the present invention is illustrated. Similar to the + + T ^ of Figure 4, the LED is added, wherein the p-type layer is added into the p-product even if the sub-electrodes 41 to 45 are in the p-type layer. The current of the expansion is very limited, The separation by dividing the p-type layer into the active regions of the sub-regions can be modified. The LED 1 further comprises a p-type layer which is φ 卩 flat knives into right stem regions 31 to 35. In other words, the p-type layer It is divided into a plurality of sub-P-type layers 31, 32, 33, 34, 35, which are separated by a non-conductive resistance barrier 51. The barriers 51 are extended from (and including) the bottom electrode to (but not

Including the action zone 4. The sub-electrodes 41 to 45 (and corresponding sub-regions of the P-type layer) can be individually controlled for initiating different portions of the active region. As in the previous working example, when different parts of the active area are activated, different photons will be activated to enable the dynamic control of the entire far field field in other examples of the sub-electrode configuration, The sub-electrodes ❹ > may be composed, for example, in three groups 'the groups may be individually controlled for selecting a far field of the sub-electrodes associated with the individual groups and their corresponding photonic crystals type. Figures 6a through 6f illustrate how different far field modes from regions containing different types of photonic crystals are summed (interfering or combining) to (4) improve the uniform yield of the overall far field from the light emitted by the entire LED. Two different far field patterns are shown in Figures 6a and 6b, each of which corresponds to an individual type of photonic crystal. The indications _9 〇, 〇 and 9 〇 respectively represent one (four) normal line 136497.doc • 22· 200933938 axis angle from the center of the semicircle placed in Figs. 6a and 6b. The far field pattern in Figure 6a is brighter near the perimeter of the far field pattern, as indicated by the line from one of the centers of the semicircle, and the far field pattern in the map is close to the far field. The center of the pattern is brighter, similarly as shown by the line from one of the centers of the other semicircle. • The far field patterns of Figures 6 & and 6b are associated with a different type of photonic body, respectively, which are shown in Figures 6d and 6e. In this example, the photonic crystals are different from each other with respect to the lattice type. The photonic crystal system φ in Fig. 6d is formed by a triangular lattice type (structure) and the photonic crystal system in Fig. 6e is formed by a hexagonal lattice type. Other combinations of lattice type, spacing or fill rate can also be used. In Fig. 6f, the LEDs contained in the photonic crystal illustrated in the figure are shown. As illustrated in Fig. 6d, at least some of the photonic crystals are oriented differently. For the sake of clarity, only two types of photonic crystals are shown, but In order to obtain a far field field type with increased uniformity, it is preferred to use more than two types of photonic crystals. The exact number of photonic crystal types required depends on the desired homogeneity of the application and the far field. For many applications In this case, a different photonic crystal between 5 and 15 will suffice to obtain the desired far-field emission. The far-field pattern from the light emitted from the LED according to Figure 显示 is shown in Figure 6c. It can be seen that Figure 6d The far-field pattern of the photonic crystal together with the far-field pattern of the photonic crystal of Fig. 2 produces a far-field pattern that is more uniform than the individual far-field patterns of Figure 6 & The brighter regions of the far field pattern are non-uniform, ie the brighter regions of the patterns are non-overlapping or non-in-phase. It should be understood that the introduction of LEDs caused by the location of regions of different emission fields in the far field. And improved overall far field The type is depleted from the position of the individual photonic crystals 136497.doc •23· 200933938. Therefore, the individual properties of the photonic crystal of the LED are not visible in the overall far field pattern of the LED. Referring to Figure 7', there is shown in accordance with the present invention. A top plan view of a light-emitting diode 1 of one embodiment. The light-emitting surface is divided into a plurality of sub-segments 61, 62, 63, 64, each sub-segment comprising a photonic crystal 1〇3, 1〇4, 1〇 5, 106, which completely covers the corresponding sub-segment. For the sake of simplicity, all sub-segments have not been assigned a reference number to all photonic crystals. For a light-emitting surface 6 of about 1 mm2, it is preferred to emit the light. The surface (light-emitting region) 6 is divided into about 1 to 2500 sub-segments. For larger luminescent surfaces, the number of sub-segments can be increased. Photonic crystals of different sub-segments have different properties (lattice parameters). A sub-segment (or region) having a small dot represents a photonic crystal having a hole (or column) of a specific diameter, and a sub-segment having a J circle represents having another specific diameter (ie, a different filling fraction) A photonic crystal of a hole (or a column). Further, a vertically scribed region indicates a photonic crystal having a characteristic orientation, and a region scribed in other directions indicates a photonic crystal having a special orientation. It should be understood that even The photonic crystals are not illustrated in Fig. 3 by sub-segments having a specific pattern, all of which have a photonic crystal. Different photonic crystals are arranged in a changing manner so that the far field mode improvement of the adjacent photonic crystals comes from The uniformity of the total Zhao Yuan % % of all photonic crystals of the luminescent surface 6 = or more specifically in the (four) type layer. Working examples make these different photonic crystal systems relative to their neighbors ξ ξ: turn (the needle balance 2 θ μ β荨 first son sa all other lattice parameters are the same). This only shows the rotational asymmetry in the far field field (ie the far field pattern 136497.doc -24 · 200933938 should (for example) not be included under conditions in one of the far field patterns. (d), if the far field type is hexagonal / then 1 can be rotated so that it has the same appearance as before the rotation,

The far field type exists - the rotation pair (four degrees). For this - far field field type H rotation angle is different from the above-mentioned rotational symmetry angle - the way to choose

According to the LED 1, as shown in Fig. 8, different sub-segments (8) including photonic crystals are separated from each other. Formed in a region between the photonic crystals. Light can be emitted from the area 200. Preferably, the area 2 is as small as possible or even absent (Fig. 3). In Fig. 4, different sub-segments are square in shape, but other shapes such as a rectangle or a hexagon may also be used. It is even possible to use more or less random polygonal shapes of one of the photonic crystals. Further, in FIG. 4, a roughened region R disposed between the photonic crystals ι〇ι, ι 2 is displayed, and the photonic crystals 1〇1, 1〇2 are different from each other with respect to at least one lattice parameter. . Even though the invention has been described with reference to specific examples thereof, many variations, modifications, and the like are apparent to those skilled in the art. Accordingly, the illustrative examples are not intended to limit the scope of the invention as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The various aspects of the invention are readily apparent from the foregoing detailed description of the embodiments of the invention, A cross-sectional view of a light-emitting diode of the example; 136497.doc • 25· 200933938 FIG. 2 is a cross-sectional view of a light-emitting diode according to another embodiment of the present invention; FIG. 3 is not in accordance with the present invention. A cross-sectional view of a light emitting diode according to another embodiment of the present invention; Fig. 4 is a cross-sectional view showing a light emitting diode according to another embodiment of the present invention; and Fig. 5 shows another specific embodiment according to the present invention. A cross-sectional view of a light-emitting diode of an embodiment; Figures 6a and 6b show a far-field pattern from a different type of photonic crystal; Figures 6d and 6e show two photonic crystals relative to at least one lattice parameter. Different; FIG. 6c and FIG. 6f illustrate interference between different far fields from regions having different types of photonic crystals as shown in FIGS. 6b and 6(} to &6; FIG. 7 shows another according to the present invention. One of the specific embodiments FIG. 8 is a top plan view of a light-emitting diode according to another embodiment of the present invention. [Main element symbol description] 1 semiconductor light-emitting diode 4 active region 6 light-emitting surface 21 N-type Layer 30 P-type semiconductor layer 31 sub-region 136497.doc 200933938

32 sub-region 33 sub-region 34 sub-region 35 sub-region 41 sub-electrode 42 sub-electrode 43 sub-electrode 44 sub-electrode 45 sub-electrode 51 non-conductive resistance barrier 61 sub-segment 62 sub-segment 63 sub-segment 64 sub-segment 101 photonic crystal 102 photonic crystal 103 photonic crystal 104 photonic crystal 105 photonic crystal 106 photonic crystal 200 region 201 light guide member / light guide segment 202 light guide member / light guide segment 203 light guide member / light guide segment 136497.doc • 27- 200933938 301 light guide member 302 light guide member 303 light guide member 304 light guide Member 305 Light guide member R roughened area 136 136497.doc ·28·

Claims (1)

200933938 X. Patent Application Range: 1. A semiconductor light emitting diode (LED) comprising: a first electrode and a second electrode for straddle a first type of semiconductor layer (21) Applying a voltage to an active region (4) between a second type of semiconductor layer (30) for generating light; and a light emitting surface (6) for emitting the light, * characterized by the LED i) comprising a first light guiding member and a second light guiding member ❿ (201, 202, 203) disposed between the light emitting surface (6) and the active region (4), and the second electrode comprising Electrodes (41, 42, 43, 44, 45) disposed on the opposite side of the active region (4) compared to the light emitting surface (6), wherein a first sub-electrode (41, 42, 43, 44, Μ) associated with the first light guiding member (201, 202, 203) and a second sub-electrode (41, 42, 43, 44, 45) associated with the second light guiding member ❹ ( 2〇1, 202, 203), the first sub-electrode and the second sub-electrode (41, 42' 43, 44, 45) can be applied by applying a different voltage to Each of the first sub-electrode and the second sub-electrode (41, 42, 43, 44, 45) is individually controlled so as to be possible from the first light guiding member and the second light guiding member (201 '202, 203) The light emission of the LED is dynamically controlled due to light emission. 2. The LED (1) of claim 1, wherein the first light guiding member belongs to a first type and the second light guiding member belongs to a second type. 3. The led (1) according to any one of the preceding claims, wherein the sub-electrodes (41 136497.doc 200933938 to 45) are sized and shaped to match the first light guiding member and the second light guiding member (101, 102) The size and shape. 4. An LED (1) as claimed, wherein each sub-electrode (4) is aligned with the first light guiding member and the second light guiding member (1〇1, 1〇2). 5. The request item Ut22LED(1), wherein the second type semiconductor layer (30) disposed on the opposite side of the active area (4) compared to the light emitting surface (6) is divided into sub-elements, each sub- The component is associated with a corresponding sub-electrode 0. 6. The LED (1) of claim 1 or 2, wherein the light guiding member (2〇1, 2〇2, 203) comprises a color filter, a color conversion device, and a color At least one of a region, a region covered by a luminescent material, or a combination thereof. 7. The LED (1) of claim 1 or 2, wherein the light guiding member (2〇1, 2〇2, 2〇3) comprises a plurality of photonic crystals disposed on the light emitting surface (6) and the function Between the regions (4), wherein at least two of the plurality of photonic crystals (101, 1〇2) selected from the plurality of photonic crystals (101, 1, 2) are adapted from the active region (4) Each of the at least two photonic crystals (101, 102) is associated with a different far field pattern, wherein the plurality of photons are provided, and the at least two photonic crystals (101, 102) are associated with each other. One of the crystals (101, 1〇2) is configured to configure the two photonic crystals (1 〇1, 丨02) to V' such that by combining the two photonic crystals associated with the y (1〇1, 102) The individual far field patterns of each of each of the ) establish a far field pattern from the light generated in the LED (1). 8. The LED (1) of claim 7, wherein the configuration is configured to position the at least two photonic crystals (101, 102) in a manner 136497.doc 200933938 such that the at least two photonic crystals are associated The irregularities of the individual far field patterns of each are at least partially non-overlapping. 9. The LED (1) of claim 1 or 2, wherein the at least one lattice parameter is one of a crystal orientation, a lattice spacing, a lattice type, or a fill separation, or a combination thereof. 1) The LED (1) of claim 1 or 2, wherein the lattice type comprises at least one of a hexagonal Φ shape, a triangular or cubic structure, a hollyhock structure or an Archimedes block. U. The LED (1) of claim 1 or 2, wherein the first type semiconductor layer (21) is an N-type semiconductor layer disposed between the active area (4) and the illuminating meter, and the A type of semiconductor layer (3 turns) is a p-type semiconductor layer which is disposed on the opposite side of the active region (4) compared to the first type of semiconductor layer (21). The LED (1) of claim M2, wherein the first type of semiconductor layer is called a P-type semiconductor layer, which is disposed between the active region (4) and the light emitting surface (6), and the second type semiconductor layer ( 3) is an n-type semiconductor layer 'which is disposed on the opposite side of the active region (4) compared to the first type semiconductor layer (21). 13. The item of claim 1 or 2, wherein the light guiding members comprise quasi-photonic crystals. Μ· The request item “LED 2 (1) of Ge 2, which causes the illuminating surface (6) of the coffee (1) to include a roughened area (R). 15. If the request item] or 2 of the LED (1), the light guiding members (10), 136497 The .doc 200933938 is disposed adjacent to each other for continuously covering at least a portion of the light emitting surface (6) of the LED (1) with the light guiding members (101, 102). 136497.doc