TW200933741A - Fabricating method of nano-ring structure by nano-lithography - Google Patents
Fabricating method of nano-ring structure by nano-lithography Download PDFInfo
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- TW200933741A TW200933741A TW097124309A TW97124309A TW200933741A TW 200933741 A TW200933741 A TW 200933741A TW 097124309 A TW097124309 A TW 097124309A TW 97124309 A TW97124309 A TW 97124309A TW 200933741 A TW200933741 A TW 200933741A
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- 239000002063 nanoring Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005329 nanolithography Methods 0.000 title abstract description 3
- 239000011148 porous material Substances 0.000 claims description 80
- 239000002086 nanomaterial Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 49
- 239000002096 quantum dot Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 45
- 238000007747 plating Methods 0.000 claims description 29
- 239000003566 sealing material Substances 0.000 claims description 16
- 238000001459 lithography Methods 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- 230000004075 alteration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 11
- 230000009467 reduction Effects 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 8
- 241000209094 Oryza Species 0.000 description 4
- 235000007164 Oryza sativa Nutrition 0.000 description 4
- 235000009566 rice Nutrition 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 241000239226 Scorpiones Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/155—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements with cylindrical configuration
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Abstract
Description
200933741 九、發明說明： 【發明所屬之技術領域】 本發明與製備奈米 別疋直接利用現行微影 積或體積中密度更細且 尺度的奈米環結構有關，特 技術設備’而製備出單位面 均勻的奈米環結構。 【先前技術】200933741 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to the preparation of nanometers by directly utilizing the current lithography or the medium-density and finer-sized nanoring structure of the volume, and preparing the unit with special technical equipment. Uniform nano ring structure. [Prior Art]
奈米科學發展至今’已被廣泛地應用於各種領 域上’在半導體1業中已不斷地製造出許多奈米器 (兀)件’其中，奈米環結構常被應用於各種半導體記 億體（D-RAM或S_RAM)或硬碟機中，而單位面積或 體積中奈米環結構的數量與密度，會直接影響到半 導體記憶體的容量或品質特性的表現，目前所揭露 各種製備奈米環結構的方法中，例如美國專利Nanoscience has been developed to date and has been widely used in various fields. In the semiconductor industry, many nano-devices have been continuously manufactured. Among them, nano-ring structures are often used in various semiconductors. (D-RAM or S_RAM) or hard disk drive, and the number and density of nano ring structures per unit area or volume directly affect the performance of the capacity or quality characteristics of the semiconductor memory. Various preparations of nanometers are currently disclosed. a method of ring structure, such as a US patent
US6,863,943 . US6,906,369 . US7,002,839 ^ 做法互有不同夕卜亦均朝向使單位面積或體積中的 奈米環結構之數量與密度更為均勾來努力^ 如第-圖至第三圖-c戶斤示，係習知以奈米微影 製程（nano-lithography)所得之奈米結構，其施作之步 驟為··先將預期的奈米圖形Q設計於光罩 (ph〇t〇mask)M上’再將該光罩M置放於表面塗佈有 阻劑（resist)2的基材1上方（如第—圖所 77丨不）；（B).以 200933741 光束e穿過光罩Mil的各奈米圖形Q後形成曝光，. 再經過顯影之後，即會在基材^表面的阻劑2上生 長出與原設計於光罩Μ上相同圖形口的奈米孔3之 結構(如第二圖所示)；(c)·以鍍源裝置1〇〇將氣體分 子或原子型態的鍍源材料B直接鍍著在該奈米孔3 的周圍與底部位置上（如第三圖及所 Φ 不）；（D).最後再以溶劑將阻劑2消除後，即可在基 材1表面上得到所需奈米結構的奈米點4(如第三圖 -c所示）》 則述之習知製程因受限於既有光刻技術的精度 極限下，使得目前最精密的奈米尺寸只能達到6〇〜65 奈米（nm)，因此轉印曝光來自光罩Μ的奈米孔3’ 其奈米尺寸均在6〇奈米㈣以上，《地其製備所 得到的奈米點4之奈米尺寸也是纟奈米㈣以 上’故前述習知奈米尺寸量子點器件的物理極限尺 寸至”仍疋停留在6〇奈米(nm)以上’因此如何突破 使得該奈米孔3的奈米尺度再為更小，乃是 個領域產業專家們所急欲解決的技術難題，同：在 解決過程中又得遵守成本花費不可太高的原則，致 使選擇技術突破的方式相當困難，瞭解奈米科技的 科學家或奈米技術的製備專家們，都知道要做出小 6 200933741 於50奈米或小至丨〜2奈夹 、木I奈米環結構元件的好 處’但至今仍見不到有任何杻 J好的特別方法被提出或 發表或應用。 【發明内容】 本發明的主要目的在利庙邮士丄 利用既有生產製造奈米尺 度結構的設備下’不必改變命 雙或重新設计其原有製備 奈米尺寸設備的精準度’即可製備出具有較現行所 有奈米環尺度更為微小的奈米環結構，進而有效達 成在相同的單位面積或體積中，獲得分佈更多且均 勻之奈米環結構的數量。 本發明之另—目的係在提，-種「使用微影技 術製備奈米環結構的方法」，其步驟包含：⑷在既定 成長（型）於基材（substrate)阻劑（resist)上之奈米結 構筒狀細孔（pore)的頂部開口上，先以原子或分子 態的封口材料堆積黏著於該頂部開口 ，使該頂部開 口的〇徑逐渐縮小而形成一較原頂部開口之口徑為 小的第一奈米縮小口（reduced nan〇_aperture)2〇 ; (b) 將氣體分子或原子型態的第一種鍍源材料直接穿透 該第一奈米縮小口後，即直接在該奈米結構筒狀細 孔底部的基材表面上，鍍著形成小於6〇奈米（nm)以 下之奈米環的内圈量子點（quantum dot) ; (c)再將第 200933741 —奈米縮小口頂部開口上堆積黏著的封口材料去 除：使恢復成原來奈米結構筒狀細孔之頂部開口的 =二’⑷再—次以原子或分子態的封口材料堆積黏 的該奈米結構筒狀細孔的頂部開口，使其頂部開 口的口徑逐渐縮小而形成較原有頂部開口口徑為 小’但卻較第_奈米縮小口 口徑為大的第二奈米縮 小口；（e)將氣體分子或原子型織的 、·'US6,863,943 . US6,906,369 . US7,002,839 ^ The practices vary from one to another, so that the number and density of nanoring structures per unit area or volume are more consistent. ^ Figure-to-third figure - c households show that it is a nano structure obtained by nano-lithography. The steps of its application are: · Design the expected nano-pattern Q in the mask (ph〇t〇) Mask) M on the top of the substrate 1 coated with a resist 2 (as shown in Figure 77); (B). with 200933741 beam e through After each nano pattern Q of the mask Mil is exposed, after development, the nanohole 3 which is the same pattern as that originally designed on the mask is grown on the resist 2 on the surface of the substrate. Structure (as shown in the second figure); (c) · directly plating the gas source or atomic type plating source material B on the periphery and bottom of the nanopore 3 by using the plating device 1 The third figure and the Φ not; (D). Finally, after removing the resist 2 with a solvent, the nano-point 4 of the desired nanostructure can be obtained on the surface of the substrate 1 (as shown in the third figure). The conventional process described in c) is limited by the precision limit of the existing lithography technology, so that the most precise nanometer size can only reach 6〇~65 nm (nm), so the transfer exposure The nanopore 3' from the enamel enamel has a nanometer size of 6 〇 nanometer (four) or more, and the nanometer size of the nano-point 4 obtained by the preparation of the ground is also 纟 nanometer (four) or more. The physical limit size of the meter-sized quantum dot device is "still staying above 6 nanometers (nm)". So how to break through makes the nanometer scale of the nanohole 3 smaller, which is an industry expert's urgency. The technical problems to be solved are the same: in the process of solving, the principle of cost can not be too high, and the way to choose technology breakthrough is quite difficult. Those who know nanotechnology scientists or nanotechnology preparation experts know that Made a small 6 200933741 at 50 nm or as small as 丨 ~ 2 Nai clip, the benefits of the wood I nano ring structural components 'but still can not see any special methods that have been proposed or published or applied. SUMMARY OF THE INVENTION The main purpose of the present invention Lima Temple 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄A more subtle nanoring structure, which is effective to achieve a more uniform and uniform distribution of nanoring structures in the same unit area or volume. Another object of the present invention is to provide The method for preparing a nanoring structure by a shadow technique, the steps comprising: (4) on a top opening of a cylindrical pore of a nanostructure structure on a predetermined growth resist (resist) First, the sealing material in the atomic or molecular state is deposited and adhered to the top opening, so that the diameter of the top opening is gradually reduced to form a first nanometer narrowing port (reduced nan〇_aperture) having a smaller aperture than the original top opening. (b) directly passing the first source material of the gas molecule or the atomic type through the first nanometer narrowing opening, that is, directly on the surface of the substrate at the bottom of the cylindrical pore of the nanostructure, Plating The inner ring quantum dot of the nanoring of less than 6 nanometers (nm); (c) the removal of the sealing material deposited on the top opening of the 200933741-nano reduction port: The top opening of the cylindrical pores of the rice structure is =2' (4) and then the top opening of the cylindrical pores of the nanostructure is deposited with the sealing material of the atomic or molecular state, and the diameter of the top opening is gradually reduced to form Compared with the original top opening, the diameter is smaller, but it is smaller than the first nanometer to reduce the diameter of the second nanometer; (e) the gas molecule or atomic type,
土趣07第一種鍍源材料 接穿透該第二奈米縮小口 ’即可直接在奈米結構 筒狀細孔底部的基材表面上’鍍著形成小於⑽奈米 ㈣以下之奈米環的外圈量子點，且該外圈量子點 係包覆在該内圈量子點上;(f)以溶劑洗游(即淫式触 刻WetetChhlg)或氣體腐蝕（即乾式㈣dryetching) 等方式將基材上的阻劑及其奈米結構筒狀細孔—併 消除；及⑷最後以触刻方式選擇性移除該内圈量子 點範圍内的第—種鍍源材料，即可由内圈量子點的 外周緣與外圈量子點的内周緣之間範圍所存在的第 二種鍍源材料，直接在基材上形成得出_ 構。 ’、 本發明之再-目的係在提供-種「使用微影技 術製備奈米環結構的方法」，其步騾包含：⑷在既定 成長(型)於基材阻劑上之奈米結構筒狀細孔的頂部 200933741 開g上，卷 該頂部開Γ 或分子態的封口材料堆積黏著於 -較=，使該頂部開口的口徑逐渐緒小而形成 2頂部開口之口徑為小的第—奈米緒小 哕 s原子毛態的第—種鍍源材料直接穿透 :底：奈米縮小口後’即直接在該奈米結構筒狀細 部的基材表面上，鍍著形成小於40奈米（nm)以 ❹ 奈米環的内圈量子點；⑷再將第-奈米緒小口 頂部開口上堆積黏著的封口材料去除，使恢復成原 來奈米結構筒狀細孔之頂部開口的口徑；⑷再以蝕 刻方式將該恢復成原來奈米結構筒狀細孔之頂部開 的口 ίι進行擴孔動作，其擴張後筒狀細孔的孔徑 尺寸會較原先奈米結構筒狀細孔之頂部開口的口徑 尺寸為大，（e)以氣體分子或原子型態的第二種鍍源 材料垂直正對於該擴張後筒狀細孔，使該第二種鍍 源材料穿透該擴張後筒狀細孔後，即會直接在奈米 結構筒狀細孔的底部基材表面上，鍍著形成一個與 該擴張後筒狀細孔之口徑尺度相同的外圈量子點， 且該外圈量子點係包覆在該內圈量子點上；（f)以溶 劑洗滌（即溼式蝕刻wet etching)或氣體腐蝕（即乾式 蝕刻dry etching)等方式將基材上的阻劑及其奈米結 構之擴張後筒狀細孔一併消除；及（g)最後以蝕刻方 ❹ ίφ 200933741 擇陡移除該內圈量 M , gp . 量子點範圍内的第一種鍍源材 科即可由内圈量子 周緣之間範圍所左 與外圈量子點的內 u範圍所存在的 材上形成得出“ 源材料，直接在基 传出一奈米環結構。 術製=之又一目的係在提供-種「使用微影技 =米㈣構的方法」，其步膝包含:(a)在既定 成長（型）於基材阳赛丨 _ I奈米結構筒狀細孔的頂部 開口上，先以原工+ a 該頂部開口 ==子態的封口材料谁積黏著於 以 開口的口徑逐渐縮小而形成 —較原頂部開口之& 徑為小的奈米縮小口；及（b)將 基材置放固定於|右=彡 ^ 、、有一4全間倾斜角度及旋轉功能 的旋轉倾斜檯上，麵由料 由對該旋轉倾斜檀做逐次依序 旋轉出各旋轉角度φι、 2 Φ3、Φ4，以及配合 各前、後、左、右之傾斜角度Θ1、Θ2、03、0 4後’即可使分子或原子型態鍍源材料依序穿透該奈 米縮小口後，而逐次連續地在基材表面長成—圈較 奈米結構筒狀細孔更微型化的奈米環結構。 【實施方式】 請參閲第四圖所示，係、習知利用buiid_up或 bUild_d_等方法製程中所得出的既有奈米結構筒 狀細孔10,該習知奈米結構筒狀細孔1〇的最小孔徑 200933741 尺寸只能達到60奈米（nm^ 6〇奈米（nm)以上，其 製備方式可選擇包括光刻微影技術、奈米轉印技術 (_〇 imprinting)、分子束磊晶技術（mbe)、化學氣 相沉積技術（MOVCD)等之任—種方式來達成，惟， 該等習知之技術方式均非本發明所新求之技術特徵 與標的，在此不予贅述，合先敘明。 續請參閲第四圖至第十七圖所示，本發明「使 用微影技術製備奈米環結構的方法」，其步騾包含： ⑷在既定成長（型）於基材（substrate)1阻劑 (reS1St)2上之奈米結構筒狀細孔（pore) 10的頂部開 口 U上（如第五圖所示），先以原子或分子態的封口 材料A堆積黏著於該頂部開口 11，使該頂部開口 u 的口徑逐渐縮小而形成一較原頂部開口丨丨之口徑為 小的第一奈米縮小口（reduced nan〇_aperture)2〇(如 第六圖-g及第七圖所示）； (b)將氣體分子或原子型態的第一種鍍源材料 B直接穿透該第一奈米縮小口 20後（如第八圖所 亍）即直接在該奈米結構筒狀細孔1〇底部的基材1 表面上，鍍著形成小於60奈米（nm)以下之奈米環的 内圈量子點（qUantum d〇t)30(如第八圖及第九圖所 示）； 200933741 “)再將第—奈米縮小口 2〇頂部開口上堆積黏 者的封ti材料人丰除 ,.^ ^ 細孔之米結構筒狀 I頂部開口 1 1的口徑（如第十圖所示广 …（d)再-次以原子或分子態的封口材料A堆積黏 者於該奈米結構筒狀㈣1〇的頂部開口 u，使其頂 部開口的D徑逐渐縮小而形成較原有頂部開口"口The first type of plating material of Tuqu 07 penetrates the second nanometer shrinking port', and can be directly plated on the surface of the substrate at the bottom of the cylindrical pores of the nanostructure to form a nanometer of less than (10) nanometer (four) or less. An outer ring of quantum dots of the ring, and the outer ring of quantum dots is coated on the inner ring of quantum dots; (f) by solvent washing (ie, WetetChhlg) or gas etching (ie, dry etching) a resist on the substrate and its nanostructured cylindrical pores - and eliminated; and (4) finally selectively removing the first source material in the range of the inner ring quantum dots by means of a touch, ie, inner ring quantum The second source material present in the range between the outer periphery of the dot and the inner periphery of the outer quantum dot is formed directly on the substrate. ', a further object of the present invention is to provide a method for preparing a nanoring structure using a lithography technique, the steps of which include: (4) a nanostructured cylinder on a predetermined growth (type) on a substrate resist. The top of the pores 200933741 is opened on the g, and the sealing material of the top opening or molecular state is deposited and adhered to - comparison =, so that the diameter of the top opening is gradually small and the diameter of the top opening is small. The first type of plating source material of the Mi Xu small 哕 atomic state directly penetrates: the bottom: after the nanometer shrinks the mouth, that is, directly on the surface of the substrate of the cylindrical structure of the nanostructure, the plating forms less than 40 nm. (nm) the inner ring quantum dots of the 奈 nano ring; (4) the sealing material deposited on the top opening of the first-nano-small opening is removed, so as to restore the diameter of the top opening of the cylindrical structure of the original nano-structure; (4) Re-expanding the opening of the cylindrical hole of the original nano-structure by etching, and expanding the hole size of the cylindrical hole to be larger than the top of the original cylindrical structure. The size of the opening is large, (e) with gas molecules Or the second source material of the atomic state is perpendicular to the expanded cylindrical pores, so that the second plating source material penetrates the expanded cylindrical pores, and then directly in the tubular structure of the nanostructure a surface of the bottom substrate of the pores is plated to form an outer ring quantum dot having the same diameter as that of the expanded cylindrical pores, and the outer ring quantum dots are coated on the inner ring quantum dots; Dissolving the resist on the substrate and the expanded cylindrical pores of the nanostructure together by solvent washing (ie, wet etching) or gas etching (ie, dry etching); and (g Finally, the inner ring amount M, gp is removed by etching the square ❹ ίφ 200933741. The first plate source material in the quantum dot range can be defined by the inner and outer circle quantum dots between the inner ring quantum periphery. The material existing in the u range is formed as "source material, and a nano-ring structure is transmitted directly at the base. Another purpose of the system is to provide a method of using lithography = meter (four) structure" Its step knees include: (a) in the established growth (type) on the substrate yang 丨 _ I nano structure tubular On the top opening of the fine hole, firstly, the original sealing material + a top sealing opening == sub-state sealing material which is formed by gradually decreasing the opening diameter of the opening - smaller than the diameter of the original top opening & And (b) placing and fixing the substrate on the rotating tilting table with a right angle of inclination and a rotation function, and the surface is rotated by the rotation of the sand Each rotation angle φι, 2 Φ3, Φ4, and the inclination angles Θ1, Θ2, 03, 0 4 of each of the front, back, left and right sides can be used to sequentially penetrate the molecular or atomic plated source material. After the rice is narrowed, the nano-ring structure which is more miniaturized than the cylindrical pores of the nanostructure is continuously formed on the surface of the substrate. [Embodiment] Please refer to the fourth figure, which is a conventional cylindrical structure in which the existing nano-structured cylindrical pores 10 are obtained by a method such as buiid_up or bUild_d_. The minimum aperture diameter of 200933741 can only reach 60 nanometers (nm^6 nanometers (nm) or more, and its preparation methods can include lithography technology, nano transfer technology (_〇imprinting), molecular beam The technique of epitaxial technology (mbe), chemical vapor deposition (MOVCD), etc. is achieved, but these technical methods are not the technical features and targets of the present invention, and will not be described herein. Continuation, please refer to the fourth to seventh figures, the "method of preparing nano ring structure using lithography technology", and the steps thereof include: (4) in the established growth (type) The top opening U of the cylindrical pore 10 on the substrate 1 resist (reS1St) 2 (as shown in the fifth figure) is first deposited in the atomic or molecular state sealing material A. Adhering to the top opening 11, the diameter of the top opening u is gradually reduced to form a The original top opening 丨丨 is a small first reduced hole (reduced nan〇_aperture) 2〇 (as shown in Figure 6-g and Figure 7); (b) gas molecules or atomic patterns After the first plating source material B directly penetrates the first nano-reduction port 20 (as shown in the eighth figure), it is directly plated on the surface of the substrate 1 at the bottom of the cylindrical structure of the nano-structure. The inner ring quantum dot (qUantum d〇t) 30 forming a nano ring of less than 60 nanometers (nm) (as shown in the eighth and ninth figures); 200933741 ") the first nanometer shrinking mouth 2〇The top of the opening on the top of the open packing ti material is abundance, .^ ^ The fine hole of the rice structure cylindrical I top opening 1 1 caliber (as shown in the tenth figure... (d) again - times with atoms Or the molecular sealing material A is deposited on the top opening u of the cylindrical structure of the nanostructure, so that the D diameter of the top opening is gradually reduced to form a larger opening than the original top opening.
徑為小’但卻較第-奈米縮小口 2〇 口徑為大的第二 奈米緒小D 21(如第十一圖_g及第十二圖所示）； ⑷將氣體分子或原子型態的第二種鍍源材料c 直接穿透該第二奈米縮小口 21(如第十三圖所示）， 即可直接在奈米結構筒狀細孔1〇底部的基材i表面 上’鍍著形成小於60奈米(nm)以下之奈米環的外圈 量子點40,且該外圈量子點4〇係包覆在該內圈量子 點30上（如第十四圖及第十五圖所示）； (f)以溶劑洗滌（即溼式蝕刻wet etching)或氣體 腐蝕(即乾式蝕刻dry etching)等方式將基材i上的 阻劑2及其奈米結構筒狀細孔1〇 —併消除（如第十 六圖所示）；及 (g)最後以蝕刻方式選擇性移除該內圈量子點 3〇範圍內的第一種鍍源材料B，即可由內圈量子點 30的外周綠與外圈量子點4〇的內周緣之間範圍所 200933741 存在的第二種鍍源材料c，直柱介甘丄丄 ^ 1接在基材1上形成得 出—奈米環結構50(如第十+ _私# e 果卞七圖及其所對應的上視 圖所示）。 其中，該步驟（a)中在奈氺社ΛΑίΓϋ, 々术結構筒狀細孔10的頂 部開口 11所形成第—奋氺 /Γ㈣$纟米縮小口 2〇的施作方式乃 如第六圖-a至第六圖所 不八圃g所不，其步騾包含： ❹ (1)·將基材1置放ΐϊΐΦ·^ & 放固疋於具有三維空間傾斜角 度及旋轉功能的旋轉傾斜 “ ”科僵r上，並調整該旋轉傾 斜檯R成一傾斜角度β ^第八圖-a所示，即該奈米 口構筒狀細孔H)的頂部顧 …貝部開口 11中心軸線與鍍源裝 置1〇〇的輸出方向之夾角度# 巧厌值為90 — 0。），使得 原子或分子態的封口材料 料A此在奈米結構筒狀細孔 Μ的頂部開D U之最底 底 緣&置處上，先產生局 部堆積封口的結果（如第丄 及其所對應側視圖 干之圖諕A所示）；及 斜：:令該旋轉傾斜樓尺固定在該傾斜角度e之傾 、位置上’再經由逐渐旋轉該旋轉傾 (如第六圖-b、第丄_ 八圖-C、第六圖』、第六圖_e、第 八圖-f及其各自所對 β 對應S各侧視圖所示），則該原子 、 |7可在奈米結構筒狀細孔10 的頂部開口 11上堆積 檟出較頂部開口 11之口徑為小 200933741 的第一奈米縮小口 20(如第六圖_g及其所對應之侧 視圖所示）；其中’該旋轉傾斜檯R只要經由增加其 旋轉的圈數’即可使封口材料A在該頂部開口 11 上’獲得更小口徑的第一奈米縮小口 20，且該第一 奈米縮小口 2 0的口徑大小可利用市售之膜厚計來做 即時的度量監測’以作為控制旋轉傾斜檯R旋轉速 度快慢的依據’因而能獲得所預期口徑大小的第一 〇 奈米縮小口 20。 另’在前述步騍（a)中的氣體分子或原子型態第 一種鍍源材料B係由鍍源裝置10〇所提供輸出，為 使得氣體分子或原子型態的第一種鍍源材料B能以 直線路徑方式穿透過第一奈米縮小口 2〇，可於該鍍 源裝置1 00與第一奈米縮小口 20之間加裝—準直器 - 2〇〇(如第八圖所示），其能有助於導引該氣體分子或 ^ 原子型態的第一種鍍源材料B行進方向更為—致 . 性，進而增加底部基材1表面上所形成内圈吾 圓置子點 3〇的可靠度。 因此，依前述步騾（a)至（g)所完成之奈米環結構 50 (如第十七圖所示），其最外周邊緣之口徑尺、 大’係小於奈米結構筒狀細孔1 〇的頂部開口 、The second nanometer is smaller than the first-nano narrowing port 2 (as shown in the eleventh figure _g and twelfth figure); (4) the gas molecule or atom The second type of plating material c of the type directly penetrates the second nanometer narrowing opening 21 (as shown in FIG. 13), and can directly face the surface of the substrate i at the bottom of the cylindrical pores of the nanostructure. The outer ring quantum dot 40 is formed with a nano ring of less than 60 nanometers (nm) or less, and the outer ring quantum dot 4 is coated on the inner ring quantum dot 30 (as shown in FIG. (fifteenth figure); (f) solvent 2 (wet etching) or gas etching (ie dry etching), the resist 2 on the substrate i and its nanostructured tubular a fine hole 1 〇 - and eliminated (as shown in the sixteenth figure); and (g) finally selectively etched the first plating source material B within the range of the inner ring quantum dot 3 ,, which can be The second plating source material c exists between the outer peripheral green of the circle quantum dot 30 and the inner circumference of the outer ring quantum dot 4〇, and the second plating source material c is formed on the substrate 1 by the straight column. 50 meters ring structures (e.g., X + _ # e private fruit and FIG Bian seven corresponding top view shown in FIG.). Wherein, in the step (a), in the Naizu community, the top opening 11 of the cylindrical pore 10 of the scorpion structure is formed as the first method of the second 纟 氺 Γ 四 四 四 四 缩小 缩小 缩小 缩小 缩小 乃 乃 乃 乃 乃-a to the sixth figure is not the same, the steps include: ❹ (1) · Place the substrate 1 ΐϊΐ Φ · ^ & 放 疋 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有"" is rigid, and adjusts the rotating tilting table R to an oblique angle β ^ shown in the eighth figure - a, that is, the top of the nano-portion cylindrical pore H) ... the central axis of the shell opening 11 The angle of the output direction of the plating source device 1〇〇 is 90 to 0. ), so that the atomic or molecular state of the sealing material material A, at the top of the bottom of the cylindrical tubular pores of the nanostructures, the bottom bottom edge & the first result of the partial accumulation of sealing (such as the third and its Corresponding to the side view of the corresponding side view 諕A); and the slanting:: the rotation of the sloping floor ruler is fixed at the inclination angle e of the inclination angle e, and then gradually rotating the rotation (as shown in the sixth figure-b, Dimensions _ 八 图-C, sixth diagram 』, sixth diagram _e, eighth diagram-f and their respective pairs of β corresponding S side view), then the atom, |7 can be in the nanostructure The first nano-reduction port 20 having a smaller diameter than the top opening 11 and having a smaller diameter than the top opening 11 is shown in the top opening 11 of the cylindrical pore 10 (as shown in the sixth figure _g and its corresponding side view); The rotating tilting table R can make the sealing material A obtain a smaller diameter first nano-reduction port 20 on the top opening 11 by increasing the number of turns of the rotation, and the first nano-reduction port 20 The size of the caliber can be measured by a commercially available film thickness gauge to control the rotating tilting table R. The basis for the speed is thus able to obtain the first 奈 nanometer reduction port 20 of the expected aperture size. Further, the gas molecule or atomic type in the foregoing step (a) is the first plating source material B, which is supplied by the plating source device 10, and is the first plating source material for making gas molecules or atomic states. B can penetrate the first nano-reduction port 2〇 in a straight path manner, and can be installed between the plating source device 100 and the first nano-reduction port 20 - collimator - 2 〇〇 (such as the eighth figure As shown, it can help to guide the gas source or the first source material B of the atomic type to travel more directionally, thereby increasing the inner circle formed on the surface of the bottom substrate 1. The reliability of the set point is 3 。. Therefore, according to the nano ring structure 50 (shown in FIG. 17) completed in the foregoing steps (a) to (g), the caliber of the outermost peripheral edge is larger than the cylindrical structure of the nano structure. 1 顶部 the top opening,
徑’故最後於基材1表面上所形成奈米 D 展構5〇的 ❿ 參 200933741 奈米尺寸絕對會小於原有奈米結構筒狀細孔1〇的奈 米尺寸；舉例而言’假如原有奈米結構筒狀細孔10 孔:工的奈米尺度為60奈米(nm)’而其頂部開口 η 經過被封小後的第二奈米缩 ^ 术木縮小口 21之口徑為30奈 米（nm)，則最後在基材 太 衣上所長成奈米環結構 50最外圈的奈米尺寸即為3〇奈米㈣的結果。 再如第十八圖所不’本發明可重複應用前述步 驟⑷至⑷及步驟⑷的操作，即可製備出多層番置型 態之奈米環結構6 〇。 又如第十九圖-a至第十九圖·c及第二十圖_a至 第二十圖-c所示，本發明中第—奈米編小口之形 狀，更可經由操作旋轉傾斜檀R的間歇旋轉方式， 來變化形成三角形第一緒小口 2〇1 (如第十九圖 中其對應的侧視圖所示)’再同時配合後續的第二奈 米縮小口變化成圓形或三角形等不同幾何形狀，即 可製備得出各種形狀變化的奈米環結構（如第二十 圖-a及第—十圖所示）^同樣 ^问樣地，再如第二十圖及 圖所示，本發明第-奈米縮小U之形狀， 亦可按前述的操作卞·# & 搮作万式而變化成方形第-縮小口 202 (如第二十一圖_d所 W丹冋時配合後續的第 二奈米縮小口變化成圓形或方形等不同幾何形狀， 200933741 亦可製備得出各種形狀變化的 术术環結構（如第二 及第二十二圖-b所示”因此，本發明亦可 對第一奈米縮小口的形狀加以 雯化，而製備出內圈 為圓形而外圈為三角形或正方 &一丄_ 刀奈米環結構（如 第一十二圖_a及第二十三圖讣所示 續如第二十四圖至第廟— 十圖所不，係本發明之 ❹ φ 第一實施例，其步驟包含·· ⑷在既定成長（型）於基材（substme)i阻劑 (_st)2上之奈米結構筒狀細孔（PGre) 1G的頂部開 口 11上’先以原子或分子態的齡.口材料八堆積黏著 於該頂部開口 11，使該頂部閉η Η认 , 貝邵開口 1 1的口徑逐渐縮小 而形成—較原頂部開口 η之口徑為小的第—奈米縮 小口（redUced nan〇_aperture)23(如第：十四 示）； 1 (b)將氣體分子或原子型態的第—種鍍源材料 B直接穿透該第-奈米縮小口 23後(如第八圖所 不)’即直接在該奈米結構筒狀㈣l 1〇底部的基材1 Μ上’鍍著形成小於4G奈米（nmmT之奈 內圈量子點f 點（quantum d〇t)7〇(如第二十五圖所示）； (C)再將第-奈米縮小口 23頂部開口上堆積黏 著的封口；償黏 材料A去除，使恢復成原來奈米結構筒狀 200933741 徑（如第二十六圖所示）; 細孔1 〇之頂部開口 (d)再以蚀刻方式將該恢復成原來奈米結構筒狀 細孔10之頂部開口 11的口徑進行擴孔動作，其擴 張後筒狀細孔12的孔徑尺寸會較原先奈米結構筒狀 細孔1〇之頂部開口 11的口徑尺寸為大（如第二十七 圖所示）； ❹The diameter of the nano-formed on the surface of the substrate 1 is 5 展 2009 2009 200933741 nanometer size will definitely be smaller than the nanometer size of the original nano-structured cylindrical pores; for example, 'if The original nano-structured cylindrical pores 10 holes: the working nanometer scale is 60 nm (nm)' and the top opening η passes through the sealed second nanometer shrinking wood 30 nm (nm), the final nano-size of the outer ring of the nano-ring structure 50 on the substrate overcoat is the result of 3 nanometers (four). Further, as shown in Fig. 18, the present invention can be repeatedly applied to the operations of the above steps (4) to (4) and (4) to prepare a multilayered nano ring structure 6 〇. Further, as shown in the nineteenth to ath to nineteenth and cth, and the twentieth to twentieth to the twentieth to the cth, in the present invention, the shape of the first nano-small port can be tilted via the operation rotation. The intermittent rotation mode of Tan R changes to form a triangle first hole 2〇1 (as shown in the corresponding side view in the nineteenth figure), and then changes with the subsequent second nanometer to change into a circle or Different geometric shapes such as triangles can be used to prepare nano ring structures with various shape changes (as shown in the twentieth-a and tenth figures), and the same as the twentieth and As shown in the figure, the shape of the first nanometer of the present invention is reduced to the shape of the U, and can also be changed into a square first-reduced port 202 according to the above-mentioned operation 卞·# & When the 第二 配合 配合 后续 后续 后续 第二 第二 第二 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 Therefore, the present invention can also sculpt the shape of the first nano-reduced port, and prepare the inner ring to be circular and the outer ring. Triangle or square & 丄 刀 knife nano ring structure (as shown in the first twenty-first figure _a and twenty-third figure 续 continued as the twenty-fourth figure to the temple - ten figure does not, is the invention Then φ The first embodiment, the steps of which include (4) the top opening 11 of the nanostructure cylindrical pore (PGre) 1G which is grown on the substrate (substme) resist (_st) 2 The upper part of the atomic or molecular state is firstly adhered to the top opening 11 to make the top closed η ,, and the aperture of the Beshao opening 1 1 is gradually reduced to form - the diameter of the original top opening η is a small first-nano-restricted (redUced nan〇_aperture) 23 (as shown in the fourteenth); 1 (b) a gas molecule or atomic type of the first source material B directly penetrates the first - After the nanometer shrinks the mouth 23 (as shown in the eighth figure), it is directly plated on the substrate 1 Μ at the bottom of the nanostructured tubular shape (4) l 1 形成 to form a quantum dot of less than 4G nanometer (nmmT inner ring) f point (quantum d〇t) 7〇 (as shown in the twenty-fifth figure); (C) then the first-nano reduction port 23 on the top opening of the adhesive seal; Material A is removed to restore the original nanostructured tubular shape of the 200933741 (as shown in Figure 26); the top opening (d) of the pore 1 is then etched back into the original nanostructured cylinder The diameter of the top opening 11 of the fine hole 10 is expanded, and the diameter of the cylindrical fine hole 12 after expansion is larger than the diameter of the top opening 11 of the original cylindrical tubular hole 1 (eg, the second Figure 17); ❹
(e) 以氣體分子或原子型態的第二種鍍源材料C 垂直正對於該擴張後筒狀細孔12，使該第二種鍍源 材料c穿透該擴張後筒狀細孔12後，即會直接在奈 米結構筒狀細孔的底部基材丨表面上，鍍著形成一 個與該擴張後筒狀細孔12之口徑尺度相同的外圈量 子點80,且該外圈量子點8〇係包覆在該內圈量子點 7〇上（如第二十八圖及第二十九圖所示）； (f) 以洛劑洗游（即淫式|虫刻wet etching)或氣體 腐蝕(gp乾式蝕刻dry etching)等方式將基材^上的 阻劑2及其奈米結構之擴張後筒狀細孔n 一併消除 (如第三十圖所示）；及 (g) 最後以蝕刻方式選擇性移除該内圈量子點 70範圍内的第一種鍍源材料B，即可由内圈量子點 70的外周緣與外圈量子點8〇的内周緣之間範圍所 存在的第—種鍍源材料直接在基材1上形成得 200933741 出一奈米環結構90(如第三十一圖及其所對應的上 視圖所示）。(e) a second plating source material C in a gas molecule or atomic form is perpendicular to the expanded cylindrical pore 12, and the second plating source material c is penetrated through the expanded cylindrical pore 12 That is, directly on the surface of the bottom substrate of the cylindrical pores of the nano-structure, an outer ring quantum dot 80 having the same caliber size as that of the expanded cylindrical pore 12 is formed, and the outer ring quantum dot is formed. 8〇 is coated on the inner ring of quantum dots 7〇 (as shown in the twenty-eighth and twenty-ninth figures); (f) washing with a lotion (ie, wet etching) Gas corrosion (gp dry etching), etc., the resist 2 of the substrate and the expanded cylindrical pores n of the nanostructure are eliminated together (as shown in FIG. 30); and (g) Finally, the first plating source material B in the range of the inner ring quantum dots 70 is selectively removed by etching, that is, the range between the outer circumference of the inner ring quantum dots 70 and the inner circumference of the outer ring quantum dots 8〇 exists. The first source material is formed directly on the substrate 1 to form a nano-ring structure 90 of 200933741 (as shown in the thirty-first diagram and its corresponding top view).
其中’該步驟（a)中在奈米結構筒狀細孔1〇的頂 部閉口 11所形成第一奈米縮小口 23的施作方式與 前述第一實施例相同，不再赘述；本發明第二實施 例適用的對象，是屬於光罩（ph〇t〇mask)的奈米圖像 尺度精密度較高時之用，因其在既定成型於基材 (substrate)l阻劑（resist)2上之奈米結構筒狀細孔 (porOiO的孔徑尺寸，通常都在4〇奈米以下，故選 擇以以触刻方式將該原來奈米結構筒狀細孔ι〇之口 徑進行擴孔方式來完成外圈量子點80。 如第三十二圖至第三十四圖所示，係本發明之 第三實施例，其步驟包含： ⑷在既定成長（型）於基材（substme)i阻劑 _)2上之奈米結構筒狀細孔(㈣ι〇的頂部開 口 U上’先以原子或分子態的封口材料A堆積黏著 於該頂部開口 11，使該頂部聞 開口 "的口徑逐渐縮小 而形成一較原頂部開口 ^之口押 《二為小的奈米縮小η (reduced nano-aperture)24(如第 (b)將基材1置放固定於具有 及旋轉功能的旋轉傾斜檯R上， 十二圖所示）；及 三維空間傾斜角度 經由對該旋轉傾斜 200933741 檀R做逐次依序旋轉出各旋轉角度Μ，，,， 以及配合其各前、後、左、右之傾斜角度Θ1、Θ2、Θ3、 - 94後(依序如第三十三圖-a、第三十三圖-b、第三十 .· 二圖-c、第三十三圖-d、第三十三圖_e、第三十三圖 -f及其各自所對應之各上視圖所示），即可使分子或 原子型態鍍源材料B依序穿透該奈米縮小口 24後， 而逐次連續地在基材1表面長成-圈較奈米結構筒 ® 狀細孔10更微型化的奈米環結構3〇〇(如第三十四圖 及其對應之上視圖所示）；因此，該奈米環結構300 係由氣體分子或原子型態的鍍源材料B，經由逐次 依序調整奈米縮小口 24之傾斜角度θ與旋轉角度〇 後，再於該基材1表面上逐次接續地附著所形成之 奈米凸出環形結構，而該凸出環形結構的最大外徑 • 尺寸絕對會小於奈米結構筒狀細孔（pore) 10的口徑 參 尺寸。 * 【圖式簡單說明】 第一圖：係習知奈米轉印技術微影製程中 材的立體示意圖❶ 與基 第一圖.係第一圖中2-2線的剖面視圖。 第三圖-a:係習用製備奈米點結構.的流程圖之_。 第三圖讣··係習用製備奈米點結構的流程圖之二。 第三圖係習用製備奈米點結構的流程圖之三。 200933741 第四圖：係習知利用bUu“P £i $程中所得出奈米結I 不意圖。 第五圖：係第四圖中5_5線的剖 . 第六圖_a :係本發明中施作第- 不意圖之一。 第六圖-b ··係本發明中施作第-示意圖之二。 ® 第/、圖C.係本發明中施作第_ 示意圖之三。 第六圖-d :係本發明中施作第一 示意圖之四。 第六圖—e ··係本發明中施作第一 示意圖之五。 第六圖4 :係本發明中施作第一 示意圖之六。 f六圖-g :係本發明中施作第— '* 示意圖之七。 第七圖：係本發明在奈米結構圓 成第一奈米縮小口之剖 第八圖.係本發明中在第一奈米 圈量子點之作動示意圖 第九圖：係本發明在基材表面上 點之示意圖。 第十圖·係去除第九圖中第一奈 ;build-down 等方法 _圓筒狀細孔的立體 面視圖 •奈米縮小口的流程 -奈米縮小口的流程 •奈米縮小口的流程 奈米縮小口的流程 奈米,縮小口的流程 奈米縮小口的流程 奈米緒小口的流# 筒狀細孔的頂部完 面示意圖。 縮小口施作奈米内 〇 長成奈米内圈量子 米縮小口後之示意 20 200933741 ❹ ❹ 圖。 第十圖_a.係本發明在奈米結構圓筒狀細孔的頂 部施作第二奈米縮小口的流程示意圖 之一0 第十H係本發明在奈米結構圓筒狀細孔的頂 部施作第二奈米縮小口的流程示意圖 之二。 係本發明在奈米結構圓筒狀細孔的頂 部施作第二奈米縮小口的流程示意圖 之三。 係本發明在奈米結構圓筒狀細孔的頂 部施作第二奈米縮小口的流程示意圖 之四。 係本發明在奈米結構圓筒狀細孔的頂 部施作第二奈米縮小口的流程示意圖 之五》 係本發明在奈米結構圓筒狀細孔的頂 部施作第二奈米縮小口的流程示意圖 之六。 第十圖-g:係' 本發明在奈米結構圓筒狀細孔的頂 部施作第二奈米縮小口的流程示意圖 之七。 係本發明在奈米結構.圓筒狀細孔的頂部 兀成第二奈米縮小口之剖面示意圖。 係本發明中在第二奈米縮小口施作奈米 第十一圖 第十一圖-d 第十一圖 第十一圖-f 第十 第十 21 200933741 外圈量子點之作動示意圖之一。 第十四圖·係本發明在奈米結構圓筒狀細孔的頂部 施作奈米外圈量子點的作動示意圖之 第十五圖’係本發明係本發明在基材表面上完成施 、 作奈米外圈量子點的剖面示意圖。In the step (a), the first nano-reduction port 23 formed in the top closed portion 11 of the cylindrical tubular pores of the nano-structure is the same as the first embodiment, and will not be described again; The object to which the second embodiment is applied is that the nano image belonging to the reticle (ph〇t〇mask) has a high precision in scale, because it is formed on a substrate 1 resist. The cylindrical shape of the upper nano-structure (the pore size of the porOiO is usually below 4 〇 nanometers, so it is selected to ream the original diameter of the cylindrical structure of the original nano-structure by the touch-cut method. The outer ring quantum dot 80 is completed. As shown in the thirty-second to thirty-fourth figures, the third embodiment of the present invention comprises the following steps: (4) in a predetermined growth (type) on a substrate (substme) The nano-structured cylindrical pores on the agent _) 2 (the top opening U of the (4) ι〇' is first adhered to the top opening 11 by the sealing material A in an atomic or molecular state, so that the caliber of the top swells gradually Shrinking to form a mouth that is smaller than the original top opening ^ "two small nano reduction η (reduced n Ano-aperture) 24 (as in (b), the substrate 1 is placed and fixed on a rotating tilting table R having a rotating function, as shown in FIG. 12; and the three-dimensional tilt angle is tilted by the rotation 200933741. Rotate the rotation angles Μ, ,, and in advance with each of the front, rear, left, and right inclination angles Θ1, Θ2, Θ3, -94 (in order, as in the thirty-third figure-a, the first Thirty-three diagrams - b, 30th. - 2 - c, 33rd - d, 33rd _e, 33rd - f and their respective top views Illustratively, the molecular or atomic plated source material B can be sequentially penetrated through the nano-reduced port 24, and successively continuously grown on the surface of the substrate 1 into a ring-shaped nano-structured tube®-like pores 10 a more miniaturized nanoring structure 3〇〇 (as shown in the thirty-fourth figure and its corresponding top view); therefore, the nanoring structure 300 is made of a gas molecule or an atomic type of plated material B, After sequentially adjusting the inclination angle θ of the nano-reduction port 24 and the rotation angle 〇, the nano-projection ring formed by successively adhering to the surface of the substrate 1 is successively attached. Structure, and the maximum outer diameter of the protruding annular structure • The size is definitely smaller than the diameter of the cylindrical structure of the nanometer pores 10. * [Simple description of the figure] The first picture: the system is known as nano-transfer The three-dimensional schematic diagram of the printing technology lithography process and the first diagram of the base is the cross-sectional view of line 2-2 in the first figure. The third figure-a: is the flow chart of the conventional preparation of nano-point structure. The third figure is the second flow chart of the preparation of the nano-point structure. The third picture is the flow chart of the conventional preparation of the nano-point structure. 200933741 The fourth picture: the use of bUu "P £i $ The result of the process is that the nano-junction I is not intended. Fig. 5 is a cross section taken along line 5_5 in the fourth figure. Fig. 6a: is one of the first-not intended in the present invention. Fig. 6 - b is the second embodiment of the present invention. ® / / Figure C. is the third embodiment of the present invention. Fig. 6 - d: is the fourth schematic diagram of the present invention. Fig. 6 - e · · is the fifth schematic of the first embodiment of the present invention. Fig. 4 is a sixth schematic diagram of the first embodiment of the present invention. f 六图-g: In the present invention, the seventh--the schematic diagram is applied. Figure 7 is a cross-sectional view of the invention in which the nanostructure is rounded into a first nanometer-reduced port. The ninth diagram of the operation of the first nano-circle quantum dot in the present invention is the surface of the substrate of the present invention. A schematic diagram of the above point. The tenth figure is the first nai in the ninth figure; the method of build-down, etc. _ The three-dimensional view of the cylindrical pores • The process of shrinking the nanometer - the process of shrinking the mouth of the nanometer • The process of narrowing the mouth of the nanometer The process of narrowing the mouth of the nanometer, narrowing the flow of the mouth, the process of reducing the mouth of the nanometer, the flow of the nanometer mouth, the flow of the top of the cylindrical pore. Narrowing the mouth for the inside of the nanometer 〇 Growing into the inner ring of the nanometer Quantum after the narrowing of the mouth 20 200933741 ❹ ❹ Figure. The tenth figure _a. is one of the schematic diagrams of the present invention for applying the second nanometer narrowing opening on the top of the cylindrical pores of the nanostructure. The tenth H series of the present invention is in the cylindrical structure of the nanometer structure. The second is the second schematic diagram of the process of applying the second nanometer to reduce the mouth. The third schematic diagram of the flow of the second nano-reduced port at the top of the cylindrical pores of the nanostructure is used in the present invention. In the fourth aspect of the present invention, a second nanometer narrowing port is applied to the top of the cylindrical pores of the nanostructure. The present invention is applied to the top of the cylindrical pores of the nanostructures as a schematic diagram of the second nanometer reduction port. The present invention is applied to the top of the cylindrical pores of the nanostructures as a second nanometer reduction port. The sixth schematic of the process. Fig. 10-g: Fig. 7 is a schematic view showing the flow of the second nanometer narrowing port at the top of the cylindrical pores of the nanostructure. The present invention is a schematic cross-sectional view of a second nanometer narrowing port formed on the top of a cylindrical structure. In the present invention, the second nanometer narrowing port is applied as the eleventh image, the eleventh figure-d, the eleventh figure, the eleventh figure-f, the tenth tenth 21, 200933741, one of the schematic diagrams of the outer ring quantum dots. . Figure 14 is a fifteenth diagram of the operation of the present invention for applying a nanometer outer ring quantum dot on the top of a cylindrical pore of a nanostructure. The present invention is based on the present invention. A schematic cross-sectional view of a quantum dot on a nanocircle.
十八圖.係第十五圖中去除阻劑的基材上內、外 第十 圈量子點的剖面示意圖。 第十八t .係本發明完成奈米環結構的示意圖。 .係本發明完成多層疊置之奈米環結構的 示意圖。 I + 九圖-a · # i ~ •、本發明在奈米結構圓筒狀細孔的頂 部對第一奈米縮小口施作不同形狀之 流程示意圖之一。 係本發明在奈米結構圓筒狀細孔的頂 部對第一奈米縮小口施作不同形狀之 流程示意圖之二。 係本發明在奈米結構圓筒狀細孔的頂 部對第一奈米縮小口施作不同形狀之 流程示意圖之三》 =本發明中不同幾何形狀之第—奈米 緒小口與第二奈米縮小口排列組合的 不意圖之一。 · 係本發明中不同幾何形狀之第一奈米 縮小口與第二奈米縮小口排列組合的 b 第十九 第十九圖Figure 18 is a schematic cross-sectional view of the tenth circle of quantum dots on the substrate on which the resist is removed in the fifteenth figure. The eighteenth t is a schematic diagram of the structure of the nanoring of the present invention. The present invention is a schematic view of the structure of a multi-layered nanoring structure. I + Nine diagram-a · # i ~ • The flow diagram of the present invention for applying different shapes to the first nanometer narrowing opening at the top of the cylindrical pores of the nanostructure. The second schematic flow diagram of the present invention for applying different shapes to the first nano-reduced port at the top of the cylindrical pores of the nanostructure. The third embodiment of the flow chart of the present invention for applying different shapes to the first nanometer narrowing opening on the top of the cylindrical pores of the nanostructure" = the different geometric shapes of the present invention - the nanometer mouth and the second nanometer One of the intents of narrowing the arrangement of the mouths. · The first nanometer narrowing port of different geometries in the present invention is combined with the second nanometer narrowing port arrangement.
22 200933741 示意圖之二。 第二十一圖-a:係本發明又在奈米結構圓筒狀細孔 的頂部對第一奈米縮小口施作不同 1 形狀之流程示意圖之一。 '· 第二十一圖-b :係本發明又在奈米結構圓筒狀細孔 的頂部對第一奈米縮小口施作不同 形狀之流程示意圖之二。 第二十一圖_c:係本發明又在奈米結構圓筒狀細孔 0 的頂部對第一奈米縮小口施作不同 形狀之流程不意圖之二。 第二十一圖-d :係本發明又在奈米結構圓筒狀細孔 的頂部對第一奈米縮小口施作不同 形狀之流程示意圖之四。 第二十二圖-a:係依第二十一圖-a至d所完成不同 幾何形狀之第一奈米縮小口與第二 奈米縮小口排列組合的示意圖之 — 〇 , 第二十二圖-b:係依第二十一圖-a至d所完成不同 " 幾何形狀之第一奈米縮小口與第二 奈米縮小口排列組合的示意圖之 第二十三圖-a:係本發明中不同幾何形狀之第一奈 米縮小口與第二奈米縮小口排列組 合的其他示意圖之一。 第二十三圖-b:係本發明中不同幾何形狀之第一奈 2322 200933741 The second part of the diagram. Twenty-first graph-a: One of the flow diagrams of the present invention for applying a different shape to the first nanometer narrowing opening at the top of the cylindrical pores of the nanostructure. 'Twenty-first graph-b: The second schematic diagram of the flow of the present invention to the first nanometer narrowing port at the top of the cylindrical pores of the nanostructure. Twenty-first graph _c: The flow of the present invention in the shape of a different shape for the first nano-reduced opening at the top of the cylindrical pores 0 of the nanostructure is not intended. Twenty-first graph-d: The fourth schematic flow diagram of the present invention for applying different shapes to the first nano-reduced port at the top of the cylindrical pores of the nanostructure. Twenty-second figure-a: a schematic diagram of the combination of the first nano-reduced port and the second nano-reduced port of different geometries according to the twenty-first to fourth-a to d- Figure-b: Twenty-third diagram of a schematic diagram of the combination of the first nanometer reduction port and the second nanometer reduction port of the geometry according to the twenty-first figure -a to d-a: One of the other schematic diagrams of the combination of the first nano-reduced port and the second nano-reduced port of different geometries in the present invention. Twenty-third Figure-b: First in the different geometries of the present invention 23
200933741 米縮小口與第二奈 合的其他示意圖之 第二十四圖：係本發明第二實施例 筒狀細孔的頂部完成 面示意圖。 第二十五圖：係本發明第二實施例中 施作奈米內圈量子點之 第二十六圖：係本發明第二實施例中 口之剖面示意圖。 第二十七圖：係本發明第二實施例中 筒狀細孔的頂部完成擴 剖面示意圖。 第二十八圖：係本發明第二實施例中 孔施作奈米外圈量子點 之一。 十九圖：係本發明第二實施例中 孔施作奈米外圈量子點 之二。 十圖’係本發明第二實施例中消 筒狀細孔之剖面示意圖。 一十一圖：係本發明完成第二實施 的示意圖β 窜二十二圖：係本發明第三實施例中 筒狀細孔的頂部完成奈 面示意圖》 t縮小口排列組 • 〇 3在奈米結構圓 F米縮小口之剖 ^在奈米縮小口 作動示意圖。 消除奈米縮小 對奈米結構圓 張筒狀細孔之 在擴張筒狀細 之作動示意圖 在擴張筒狀細 之作動示意圖 主劑上擴張 奈米環結構 奈米結構圓 縮小口之剖 24 200933741Twenty-fourth drawing of the second embodiment of the present invention is a second embodiment of the present invention. Twenty-fifth Figure: Figure 26 is a perspective view of a second embodiment of the present invention. Figure 27 is a schematic cross-sectional view showing the top portion of the cylindrical pores in the second embodiment of the present invention. Twenty-eighth drawing: In the second embodiment of the present invention, the pores are applied to one of the outer circumference quantum dots. Figure 19: In the second embodiment of the present invention, the pores are applied as the second outer quantum dot of the nanosphere. Fig. 10 is a schematic cross-sectional view showing the cylindrical pores in the second embodiment of the present invention. Figure 11 is a schematic view of the second embodiment of the present invention. Fig. 22 is a diagram showing the top of the cylindrical pores of the third embodiment of the present invention. The structure of the rice structure is reduced by the F-meter reduction. Elimination of nanometer shrinking Nano-structured round cylindrical pores in the expansion of the cylindrical fine action diagram in the expansion of the cylindrical fine action diagram on the main agent expansion nano-ring structure nanostructured circle reduced mouth section 24 200933741
第三十三圖-a:係本發 小口在 上施作 — 〇 第三十三圖-b :係本發 小口在 上施作 第三十三圖-C:係本發 小口在 上施作 三 ° 第三十三圖-d :係本發 小口在 上施作 四。 第三十三圖-e ··係本發 小口在 上施作 五。 第三十三圖-f :係本發 小口在 上施作 六。 第三十四圖：係本發明 的剖面示 明第三實施例中透過奈米縮. 奈米結構圓筒狀細孔的底面 奈米環結構的作動示意圖之 明第三實施例中透過奈米縮 奈米結構圓筒狀細孔的底面 奈米環結構的作動示意圖之 明第三實施例中透過奈米縮 奈米結構圓筒狀細孔的底面 奈米環結構的作動示意圖之 明第三實施例中透過奈米縮 奈米結構圓筒狀細孔的底面 奈米環結構的作動示意圖之 明第三實施例中透過奈米縮 奈米結構圓筒狀細孔的底面 奈米環結構的作動示意圖之 明第三實施例中透過奈米縮 奈米結構圓筒狀細孔的底面 奈米環結構的作動示意圖之 完成第三實施例奈米環結構 意圖。 25 200933741 【主要元件符號說明】Thirty-third figure-a: This is a small mouth on the top - 〇 33rd figure - b: This is a small mouth on the top of the thirty-third figure -C: This is a small mouth on the top Three degrees Thirty-third map -d: This is a small mouth on the top of the four. Thirty-third figure - e · · This is a small mouth on the top of the five. Thirty-third figure-f: This is a small mouth on the top of the six. Figure 34 is a cross-sectional view showing the operation of the bottom nano ring structure of the cylindrical pores of the nanostructure through the nanometer structure in the third embodiment. Schematic diagram of the operation of the bottom surface nano-ring structure of the cylindrical pores of the nanostructures. The third embodiment shows the operation of the bottom nano-ring structure of the cylindrical pores of the nano-nano structure. A schematic diagram of the operation of the bottom surface nanoring structure of the cylindrical pores of the nano-nano structure in the embodiment. The third embodiment of the bottom-bottom nano-ring structure of the cylindrical pores of the nano-nano structure EMBODIMENT OF THE EMBODIMENT In the third embodiment, the operation of the bottom ring nano-ring structure through the cylindrical pores of the nano-nano structure is completed. 25 200933741 [Main component symbol description]
1 -基材 3 -奈米孔 10-奈米結構筒狀細孔 12-擴張後筒狀細孔 20、23-第一奈米縮小口 2 1 -第二奈米縮小口 30、70-內圈量子點 50 ' 60、90 ' 300-奈米環 100-鍍源裝置 201-三角形第一縮小口 A-封口材料 C-第二種鍍源材料 M-光罩 2-阻劑 4 -奈米點 11-頂部開口 24-奈米縮小口 40、80-外圈量子點 結構 200-準直器. 202-方形第一縮小口 B-第一種鍍源材料 e-光束 Q-奈米圖形1 - Substrate 3 - Nanopore 10 - Nanostructure cylindrical pores 12 - Expanded cylindrical pores 20, 23 - First nanometer narrowing opening 2 1 - Second nanometer narrowing opening 30, 70- Circle quantum dot 50 '60, 90 '300-nano ring 100-plate source device 201-triangle first shrink port A-sealing material C-second plating source material M-mask 2-resistor 4-nano Point 11 - Top opening 24 - Nano shrinking port 40, 80 - Outer ring quantum dot structure 200 - Collimator. 202 - Square first shrinking port B - First plating source material e - Beam Q - Nano graphic
R-旋轉傾斜檯 θ、Θ1、Θ2、Θ3、Θ4-傾斜角度 Φ、Φ1、Φ2、Φ3、Φ4-旋轉角度 26R-rotating tilting table θ, Θ1, Θ2, Θ3, Θ4-inclination angle Φ, Φ1, Φ2, Φ3, Φ4-rotation angle 26
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