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TW200921275A - Photosensitive composition and laminated body thereof - Google Patents

Photosensitive composition and laminated body thereof Download PDF

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Publication number
TW200921275A
TW200921275A TW97131356A TW97131356A TW200921275A TW 200921275 A TW200921275 A TW 200921275A TW 97131356 A TW97131356 A TW 97131356A TW 97131356 A TW97131356 A TW 97131356A TW 200921275 A TW200921275 A TW 200921275A
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Taiwan
Prior art keywords
substrate
photosensitive resin
mass
photoresist pattern
resin composition
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TW97131356A
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Chinese (zh)
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TWI380130B (en
Inventor
Yukimasa Baba
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Asahi Kasei Emd Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Graft Or Block Polymers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)

Abstract

Disclosed is a photosensitive resin composition containing 20-90% by mass of an alkali-soluble polymer (a) containing a carboxylic acid and having an acid equivalent weight of 100-600 and a weight average molecular weight of 5,000-500,000, 5-70% by mass of a specific ethylenically unsaturated addition polymerizable monomer (b), and 0.01-30% by mass of a photopolymerization initiator (c).

Description

200921275 九、發明說明: 【發明所屬之技術領域】 ^發明係關於-種可藉由驗性水溶液顯影之感光性樹脂 二勿:將該感光性樹脂組合物積層於支持體上而形成之 、 4尤性树知積層體於基板上形 成光阻圖案之方法及該光阻 儿,圃茶之用途。更詳細而言,本 ㈣關於-種感光性樹脂組合物,該感光性樹脂組合物 印刷電路板之製造’可撓性印刷電路板之製造]。晶片 搭载用導線架(以下稱為導㈣)之製造,以金屬遮罩200921275 IX. Description of the Invention: [Technical Field of the Invention] The invention relates to a photosensitive resin which can be developed by an aqueous solution of an aqueous solution, which is formed by laminating the photosensitive resin composition on a support. A method for forming a photoresist pattern on a substrate and a use of the photoresist, the tea. More specifically, the present invention relates to a photosensitive resin composition, a photosensitive resin composition, and a printed circuit board, which are manufactured as a flexible printed circuit board. Wafer mounting lead frame (hereinafter referred to as guide (four)), with metal mask

(_丨mask)之製造為代表之金屬笛精密加工,以BGA (Ba11 Gnd Array,球形陣列)或 CSP (Chip Scale Package, 晶片尺寸封裝)為代表之半導體封裝之製造,以TAB (Tape(_丨mask) is manufactured by metal flute precision processing, and is manufactured by semiconductor package represented by BGA (Ba11 Gnd Array) or CSP (Chip Scale Package), with TAB (Tape)

Automated Bonding,媒德白缸 r 人 8捲帶自動接合)或COF (Chip onAutomated Bonding, media white tank r person 8 rolls with automatic joint) or COF (Chip on

Film’薄膜覆晶封裝:將半導體ΐ(:搭載於薄膜狀之微細電 路板上者)為代表之捲帶式基板之製造,半導體凸塊之製 造’平板顯示器領域中之以ΙΤ〇(Ιη(ΗιπηΤίη〇χ*,氧化 銦錫)電極、定址雷炻r 極(address electrode)或電磁波遮罩為 代表之構件之製造中裎 徒供較好的光阻圖案,且可作為利用 喷砂工法加工基#時之保護遮罩構件提供較好的光阻圖 案。 【先前技術】 先前,利用光微影法(photolithography)製造印刷電路 板所明光微衫法係指以下之方法:將感光性樹脂組合物 塗佈於基板上,進料圍也β 疋订圖案曝光而使該感光性樹脂組合物之 133895.doc 200921275 曝光部分聚合硬化,用顯影液去除未曝光部分,從而於基 板上形成光阻圖案,對該光阻圖案實施蝕刻或電鍍處理而 形成導線(conductor pattern)後,將該光阻圖案自該基板上 剝離去除,藉此於基板上形成導線。 於上述光微影法中’使用以下任一種方法:於將感光性 樹脂組合物塗佈於基板上時,將光阻劑溶液塗佈於基板上 以使其乾燥之方法;或將依序積層有支持體、包含感光性 樹脂組合物之層(以下亦稱為「感光性樹脂層」。)及視需要 之保護層的感光性樹脂積層體(以下稱為「乾膜光阻層」” 積層於基板上之方法。另外’於印刷電路板之製造中,較 多使用後者之乾膜光阻層。 以下,對使用上述之乾膜光阻層製造印刷電路板之方法 進行簡單說明。 首先’於乾膜光阻層具有保護層,例如聚乙稀膜之情形 時,將其自感光性樹脂層上剝離。繼而,使用層合機 (laminator)依照基板、感光性樹脂層、支持體之順=感 光性樹脂層及支持體積層於基板、例如銅箱積層板(c〇阶 山d laminate)上。繼而,經由具有佈線圖案之光罩,用超 阿壓水銀燈所發出之包含请(365 nm)之紫外線對該感光性 樹脂層進行曝光,藉此使曝光部分聚合硬化。繼而,將支 持體、例如聚對苯二甲酸乙二酯剝離。繼而,利用顯影 液、例如具有弱驗性之水溶液溶解或分散去除感光性樹脂 層之未曝光部分,從而於基板上形成光阻圖案。 作為使用以此種方式所形成之基板上的光阻圖案製作金 133895.doc 200921275 屬導線之方法,大致分為2種方法,即利用敍刻去除未被 光阻膜包覆之金屬部分之方法與利用電鍍鍍敷金屬之方 法。特別是最近自步驟之簡便性考慮多使用前者之方法。 於利用蝕刻去除金屬部分之方法中,用硬化光阻膜覆蓋 基板之貫通孔(通孔,through hole)或用於層間連接之導孔 (via hole),藉此使孔内之金屬不受到蝕刻。該工法稱為蓋 孔法(tenting)。於蝕刻步驟中,使用例如氯化銅、氯化 鐵、銅氨錯合物溶液。 ΟFilm's film-on-chip package: The manufacture of a tape-and-reel substrate represented by a semiconductor device (which is mounted on a thin film-like circuit board), and the manufacture of semiconductor bumps in the field of flat panel displays (Ιη( ΗιπηΤίη〇χ*, indium tin oxide) electrode, address electrode or electromagnetic wave mask as a representative of the manufacturing of components to provide better photoresist pattern, and can be used as a processing method using sandblasting The protective mask member of #时 provides a better photoresist pattern. [Prior Art] Previously, the method of manufacturing a printed circuit board by photolithography refers to the following method: a photosensitive resin composition Applying on the substrate, the feed circumference is also exposed by the β-stitch pattern, and the exposed portion of the photosensitive resin composition is polymerized and cured, and the unexposed portion is removed by the developer to form a photoresist pattern on the substrate. After the photoresist pattern is etched or plated to form a conductor pattern, the photoresist pattern is peeled off from the substrate to form a substrate. In the above photolithography method, 'the following method is used: when the photosensitive resin composition is applied onto a substrate, a photoresist solution is applied onto the substrate to dry it; or A photosensitive resin laminate having a support, a layer containing a photosensitive resin composition (hereinafter also referred to as "photosensitive resin layer"), and an optional protective layer (hereinafter referred to as "dry film photoresist layer") The method of laminating on a substrate. In addition, the latter dry film photoresist layer is often used in the manufacture of a printed circuit board. Hereinafter, a method of manufacturing a printed circuit board using the above-described dry film photoresist layer will be briefly described. First, when the dry film photoresist layer has a protective layer, for example, a polyethylene film, it is peeled off from the photosensitive resin layer. Then, a laminator is used in accordance with the substrate, the photosensitive resin layer, and the support. The photosensitive resin layer and the support volume layer are on a substrate, for example, a copper box laminate. Then, via a photomask having a wiring pattern, the inclusion of the super-pressure mercury lamp is included ( 36 Ultraviolet light of 5 nm) exposes the photosensitive resin layer, whereby the exposed portion is polymerized and cured. Then, the support, for example, polyethylene terephthalate is peeled off. Then, using a developer, for example, has a weak test property The aqueous solution dissolves or disperses to remove the unexposed portion of the photosensitive resin layer, thereby forming a photoresist pattern on the substrate. As a method of forming a wire by using a photoresist pattern on a substrate formed in such a manner, gold 133895.doc 200921275 There are roughly two methods, namely, a method of removing a metal portion not covered by a photoresist film and a method of plating a metal by electroplating. In particular, the method of the former is often used in consideration of the simplicity of the step. In the method of removing a metal portion by etching, a through hole (through hole) of a substrate or a via hole for interlayer connection is covered with a hardened photoresist film, thereby preventing metal in the hole from being etched. . This method is called tenting. In the etching step, for example, a copper chloride, a ferric chloride, or a copper ammonia complex solution is used. Ο

最近,伴隨著印刷電路板中之配線間隔之微細化,對於 乾膜光阻層之高解析度之要求增加。通常乾膜光阻層之厚 度越薄解析度越高’由此可對應高解析度之要求。然而, 存在以下問題,即隨著乾膜之厚度變薄蓋孔性惡化,且覆 蓋基板之貫it孔之硬化光阻膜變㈣於破裂,從而造成良 率大巾田下降。因此,業界正在尋求—種不增加乾膜光阻層 之厚度且蓋孔性良好’肖良率提昇可做出較大貢獻之感光 性樹脂組合物。 另H於印刷電路板製造技術中,利料射直接繪 圖’即’不需要光罩之無光罩曝光近年來得到迅速地推 廣。作為無光罩曝光之光源’較多地使用波長為350〜410 光_ 4寺別疋1線(365 nm)或h線(4〇5 nm)。’然而,與通 、《接觸曝光相比,無光罩曝光進行1次 要之時間較具,n & 較之接觸曝光該曝光步驟之產量 (t roughput)較低。因此植 b為了儘里縮短曝光所需要之時 、内靈敏度之感光性樹脂組合物。 133895.doc 200921275 於專利文獻1中^示有可進行無光罩曝光之感光性樹脂 組合物,但其靈敏度尚不充分,於曝光步驟中無法獲得令 人滿意之產量,而且對於蓋孔性亦未有任何揭示,因此關 於良率不明。於專利文獻2中揭示有蓋孔性良好且可進行 無光罩曝光之感光性樹脂組合物,但該感光性樹脂組合物 之靈敏度亦不充分,無法獲得令人滿意之產量。 基於此種原因,作為乾膜光阻層用之感光性樹脂組合 物,要求一種顯示良好之相容性,尤其對於4〇5±1〇 ^^之 光源之靈敏度較高’而且蓋孔性優異之感光性樹脂組合 物’即對產I提昇與良率提昇可做出較大貢獻之感光性樹 脂組合物。 [專利文獻1 ]日本專利特開2〇〇5_2丨5丨U號公報 [專利文獻2]曰本專利特開2〇〇7_丨〇丨94〇號公報 【發明内容】 [發明所欲解決之問題] 本發明之目的在於提供一種克服上述問題點,對產量提 昇與良率提昇可做出較大貢獻之感光性樹脂Μ合物及使用 该感光性樹脂組合物之感光性樹脂積層體。 [解決課題之技術手段] 上述課題可藉由本發明之以下構成達成。 (1) 一種感光性樹脂組合物,其含有20〜90質量%之⑷鹼 溶性高分子,上述鹼溶性高分子含有羧酸,其酸當量為 100〜600、重量平均分子量為5 〇〇〇〜5〇〇,〇〇〇,5〜7〇質量% 之(b)乙烯性不飽和加成聚合性單體及〇 〇1〜3〇質量%之 133895.doc 200921275 光聚口起始劑’且邊感光性樹脂組合物含有選自以下述通 式⑴所表示之化合物群中之至少—種化合物、冑自以下述 通式(π)所表示之化合物群中之至少一種化合物及選自以 了述通式⑽所表示之化合物群中之至少—種化合物作為 該(b)乙稀性不飽和加成聚合性單體,並含有〇〇卜3〇質量 %之以下述通式(IV)所表示之„丫„定化合物作為該⑷光聚合 起始劑。 [化1] 0 Rt 〇-(A-〇)mi-(B-0)m3*C-C=CH2 Φ h3c-c-ch3 ⑴ ό 了 9 (R4R2刀別獨立為氫原子或甲基。八及^表示碳數為2〜6之 伸烷基忒等可相同亦可不同’於該等不同之情形時, 含_(A_0)_及之重複單元之結構可無規則地構成, 亦可嵌段構成。ml、m2、m3及m4為〇以上之整數, ml+m2Am3 + m4分別獨立為〇〜8之整數,ml+m2 + m3 + m4為 2〜8之整數。) I33895.doc 200921275 [化2] o r3 〇—(C-0)nr,s-(0-0)m7-C-C=CH2 φ H3C-C-CH3 (II) φ 〇-(C-〇)n,6-(D^D)rne-c-C=CH2 (R_3及R_4分別獨立為氫原子或曱基。C及D表示碳數為2〜&之 伸烧基,該等可相同亦可不同,於該等不同之情形時, 含-(C-0)-及-(D-Ο)-之重複單元之結構可無規則地構成, 亦可嵌段構成。m5、m6、m7及m8為0以上之整數, m5+m6及m7 + m8分別獨立為〇〜28之整數,m5 + m6+m7 + m8 為10〜28之整數。) [化3] 0 r5 〇-(E-〇)m9-(F-0)ni11-C-C=CH2Recently, with the miniaturization of wiring intervals in printed circuit boards, the demand for high resolution of dry film photoresist layers has increased. Generally, the thinner the thickness of the dry film photoresist layer, the higher the resolution, which can correspond to the requirement of high resolution. However, there is a problem in that as the thickness of the dry film becomes thinner, the cap hole property is deteriorated, and the hardened photoresist film covering the through hole of the substrate becomes (4) cracked, resulting in a decrease in the yield of the large towel field. For this reason, the industry is seeking a photosensitive resin composition which does not increase the thickness of the dry film resist layer and has a good capping property. In addition, in the manufacturing technology of printed circuit boards, the exposure of the direct-painting, that is, the exposure of the mask without the mask, has been rapidly advanced in recent years. As a light source for exposure without a mask, the wavelength is 350 to 410. _ 4 疋 疋 1 line (365 nm) or h line (4 〇 5 nm). However, compared with the contact exposure, the exposure time of the maskless exposure is more than one, and the yield of the exposure step is lower than that of the contact exposure. Therefore, in order to shorten the exposure, the sensitivity of the photosensitive resin composition is required. 133895.doc 200921275 Patent Document 1 discloses a photosensitive resin composition which can be exposed without a mask, but the sensitivity is not sufficient, a satisfactory yield cannot be obtained in the exposure step, and the cap hole property is also There is no disclosure, so the yield is unknown. Patent Document 2 discloses a photosensitive resin composition which is excellent in capping property and can be exposed to a mask, but the sensitivity of the photosensitive resin composition is also insufficient, and a satisfactory yield cannot be obtained. For this reason, a photosensitive resin composition for a dry film photoresist layer is required to exhibit good compatibility, especially for a light source of 4〇5±1〇^^, and excellent in capping property. The photosensitive resin composition' is a photosensitive resin composition which can contribute greatly to the improvement of yield I and the improvement of yield. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 2 〇〇 5 丨 丨 丨 丨 [ 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 In view of the above problems, it is an object of the present invention to provide a photosensitive resin composition which can greatly contribute to improvement in yield and improvement in yield, and a photosensitive resin laminate using the photosensitive resin composition. [Technical means for solving the problem] The above problems can be attained by the following constitution of the present invention. (1) A photosensitive resin composition containing 20 to 90% by mass of (4) an alkali-soluble polymer, wherein the alkali-soluble polymer contains a carboxylic acid having an acid equivalent of 100 to 600 and a weight average molecular weight of 5 〇〇〇 5〇〇,〇〇〇,5~7〇% by mass of (b) ethylenically unsaturated addition polymerizable monomer and 〇〇1 to 3〇% by mass of 133895.doc 200921275 Photopolymerization starter' The photosensitive resin composition contains at least one compound selected from the group consisting of compounds represented by the following general formula (1), at least one compound selected from the group consisting of the following general formula (π), and at least one selected from the group consisting of At least one of the compound groups represented by the above formula (10) is used as the (b) ethylenically unsaturated addition polymerizable monomer, and is contained in the following formula (IV). The compound is represented by the (4) photopolymerization initiator. 0 Rt 〇-(A-〇)mi-(B-0)m3*CC=CH2 Φ h3c-c-ch3 (1) ό 9 (R4R2 is independently hydrogen or methyl. 八和^ The alkylene group having a carbon number of 2 to 6 may be the same or different. In the case of the difference, the structure of the repeating unit containing _(A_0)_ may be formed irregularly or may be block-formed. Ml, m2, m3, and m4 are integers above 〇, ml+m2Am3 + m4 are each independently an integer of 〇~8, and ml+m2 + m3 + m4 is an integer of 2 to 8.) I33895.doc 200921275 [Chemical 2 ] o r3 〇—(C-0)nr,s-(0-0)m7-CC=CH2 φ H3C-C-CH3 (II) φ 〇-(C-〇)n,6-(D^D) rne-cC=CH2 (R_3 and R_4 are each independently a hydrogen atom or a sulfhydryl group. C and D represent a stretching group having a carbon number of 2 to & and the same or different, in the case of the difference, The structure of the repeating unit containing -(C-0)- and -(D-Ο)- may be randomly formed or block-formed. m5, m6, m7 and m8 are integers of 0 or more, m5+m6 and M7 + m8 are each independently an integer of 〇~28, m5 + m6+m7 + m8 is an integer of 10~28.) [Chemical 3] 0 r5 〇-(E-〇)m9-(F-0)ni11-CC =CH2

Φ (III) H3C—C-CHj φ Τ Ο Re °~(E*〇)mi〇*(F-0)mirc-C=CH2 (R5及R6分別獨立為氫原子或甲基。E及F表示碳數為2〜6之 伸院基’該等可相同亦可不同,於該等不同之情形 時,、-(E-Ο)-及_(F_〇)_之重複單元所構成之結構可無規則地 構成’亦可嵌段構成。m9、mil及ml2為〇以上之整 133895.doc -10- 200921275 數’ m9+ml0及mn+mi2分別獨立為〇〜50之整數 m9 + ml0 + mll+ml2為 30〜50之整數 ° ) [化4]Φ (III) H3C—C—CHj φ Τ Ο Re °~(E*〇)mi〇*(F-0)mirc-C=CH2 (R5 and R6 are each independently a hydrogen atom or a methyl group. E and F represent The structure of the remnant unit having a carbon number of 2 to 6 may be the same or different, and in the case of the difference, the structure of the repeating unit of -(E-Ο)- and _(F_〇)_ may constitute 'may constitute a block .m9, mil and ml2 billion or more of the whole number 133895.doc -10- 200921275' m9 + ml0 and mn + mi2 〇~50 each independently an integer of m9 + ml0 + irregularly Mll+ml2 is an integer of 30~50 °) [Chemical 4]

(式中,R7為氫、烷基、芳基、吼啶基、烷氧基或經取代 之院基。) f(wherein R7 is hydrogen, alkyl, aryl, acridine, alkoxy or substituted). f

Lj (2)如(1)揭示之感光性樹脂組合物,其進而含有〇.〇1〜p 貝里/〇之(d) N-芳基_α_胺基酸化合物及〇 〇1〜3〇質量%之(6) 鹵素化合物。 (3)—種感光性樹脂積層體,其包含:包含基材膜之支 持體’及積層於該支持體上之包含如⑴或(2)揭示之感光 性樹脂組合物之層。 () 種光阻圖案形成方法,其包含以下步驟:準備如 (3)揭示之感光性樹脂積層體,於基板上積層該感光性樹脂 積曰體之包含感光性樹脂組合物之層而形成感光性樹脂 層’對該感光性樹脂層進行曝光、顯影。 (5)如(4)揭示之光阻圖案形成方法,其中於上述曝光步 =中:曝光方法為直接繪圖,且照度為1〇謂^2以上、 田射掃1¾方向之掃描速度為2⑽/秒以上。 (:驟「種具有凹凸圖案之基材之製造方法,其包含以下 ^之方使用玻璃肋(glass rib)作為基板,利用如⑷或(5)揭 丁之方去於該基板上形成光阻圖# ’利用噴砂工法對所獲 133895.doc 200921275 得之基板進行加工,剝離光阻圖案。 (7) 一種導體圖案之製造方法,其包合 3以下步驟:使用 金屬板或金屬被膜絕緣板作為基板,利 之方法於該基板上形成光阻圖案,對: 刻或電鐘。 “獲-之基板進行钱 ⑻-種印刷電路板之製造方法,其包含以下步驟:使 用金屬包覆絕緣板作為基板,利用如_(5)揭示之方法 於該基板上形成光阻圖案’對所獲得之基板進行㈣或電 鍍,剝離光阻圖案。 ⑼-種導線架之製造方法’其包含以下步驟:使用金 屬板作為基板,利用如⑷或(5)揭示之方法於該基板上形 成光阻圖案,對所獲得之基板進行餘刻,剝離光阻圖案。 (1〇) 一種半導體封裝之製造方法,其包含以下步驟:使 用已形成作為LSI之電路之晶圓作為基板,利用如⑷或⑺Lj (2) The photosensitive resin composition as disclosed in (1) which further contains 〇.〇1~p Berry/〇(d) N-aryl_α_amino acid compound and 〇〇1~3 〇% by mass of (6) halogen compounds. (3) A photosensitive resin laminate comprising: a support comprising a base film; and a layer comprising the photosensitive resin composition as disclosed in (1) or (2) laminated on the support. A method for forming a photoresist pattern, comprising the steps of: preparing a photosensitive resin laminate according to (3), laminating a layer of the photosensitive resin composition comprising a photosensitive resin composition on a substrate to form a photosensitive layer The photosensitive resin layer 'exposure and develop the photosensitive resin layer. (5) The method for forming a photoresist pattern as disclosed in (4), wherein in the above exposure step =: the exposure method is direct drawing, and the illumination speed is 1 〇 or more, and the scanning speed in the direction of the field sweep is 2 (10) / More than two seconds. (Step: "Manufacturing method of a substrate having a concave-convex pattern, which comprises using a glass rib as a substrate, and forming a photoresist on the substrate by using (4) or (5) Figure # 'The substrate obtained by 133895.doc 200921275 is processed by a sandblasting method to strip the photoresist pattern. (7) A method for manufacturing a conductor pattern, which comprises the following steps: using a metal plate or a metal film insulating plate as a method A substrate, a method for forming a photoresist pattern on the substrate, for: engraving or an electric clock. The method for manufacturing a substrate (8)-type printed circuit board comprises the steps of: using a metal-clad insulating board as a substrate And using the method disclosed in _(5) to form a photoresist pattern on the substrate to perform (four) or electroplating on the obtained substrate, and stripping the photoresist pattern. (9) A method for manufacturing a lead frame, which comprises the following steps: using a metal The board is used as a substrate, and a photoresist pattern is formed on the substrate by the method disclosed in (4) or (5), and the obtained substrate is left to be etched to peel off the photoresist pattern. (1) A semiconductor package is manufactured. A method, comprising the steps of: using a wafer formed of an LSI circuit as a substrate, or the use of such ⑷ ⑺

Lj "、方法於4基板上形成光阻圖案,對所獲得之基板進 行電鏡’剝離光阻圖案。 [發明之效果] s、本發明提供一種高靈敏度、蓋孔性良好而且高解析度之 树&、、且合物、使用該感光性樹脂組合物之感光性樹 、體使用6亥感光性樹脂積層體於基板上形成光阻圖 、 法及°亥光P且圖案之用途,可用於導線之製造、印刷 電路板之製;主、道4 導線采之製造、半導體封裝之製造、包含Lj ", a photoresist pattern is formed on the 4 substrate, and the obtained substrate is subjected to an electron microscope 'peeling resist pattern. [Effects of the Invention] The present invention provides a tree having a high sensitivity and a good capping property and a high resolution, a compound, a photosensitive tree using the photosensitive resin composition, and a body photosensitive property. The resin laminate is used for forming a photoresist pattern, a method, and a pattern on a substrate, and can be used for manufacturing a wire and a printed circuit board; manufacturing a main conductor, manufacturing a semiconductor package, and including

具有凹凸圖崇 > 盆II 系之基材之平面顯示器之製造中。 由於本發明之感光性樹脂組合物具有高靈敏度、 133895.doc 200921275 高解析度及良好之蓋孔性, 良、短路不良、保護通孔之 良好地製造印刷電路板。由 生產速度,並縮短製造時間 【實施方式】 故可防止印刷電路板之斷線不 光阻膜之破裂等,因此可良率 此’可大幅提昇印刷電路板之 ’從而提昇作業性及生產性。 以下’對本發明進行具體說明。 <感光性樹脂組合物> (a)驗溶性高分子In the manufacture of a flat panel display having a substrate of the embossed > The photosensitive resin composition of the present invention has high sensitivity, high resolution of 133895.doc 200921275, good caphole property, good short circuit, short circuit, and good protection of through-holes for manufacturing printed circuit boards. The production speed and the manufacturing time are shortened. [Embodiment] Therefore, the breakage of the printed circuit board can be prevented from being broken by the photoresist film, etc., so that the yield can be greatly improved, thereby improving workability and productivity. The present invention will be specifically described below. <Photosensitive resin composition> (a) Testable polymer

本發明之感光性樹脂組合物中之(a)驗溶性高分子係指含 有叛酸,且酸當量為100〜_、重量平均分子量為 5,000〜500,〇〇〇之鹼溶性高分子。 為了使感光性樹脂組合物對於包含驗性水溶液之顯影液 或剝離液具有顯影性或剝離性,鹼溶性高分子必須具有羧 基。酸當量較好的是⑽〜副,更好的是25〇〜45〇。就確保 與溶劑或组合物中之其他成分’特別是後述之⑻乙稀性不 飽和加成聚合性單體之相容性之觀點而言係_以上, 又,就維持顯影性或剝離性之觀點而言係6〇〇以下。此 處,所謂酸當量係指於感光性樹脂組合物中具有丨當量之 幾基之鹼各性尚分子之質量(gr_)。再者,使用平沼自動 滴疋裝置(Reporting Titrator)(C〇M_555),以 m〇I/L 之 Η X /容液利用電位差滴定法進行酸當量之測定。 鹼冷性南分子之重量平均分子量較好的是5,〇〇〇至 5 00’000。就均勻地維持乾膜光阻層之厚度,從而獲得對 於顯影液之耐受性之觀點而言為5,000以上,又,就維持 I33895.doc 13 200921275 顯影性之觀點而言為500,〇〇〇以下。更好的是重量平均 分子量為20,000至i〇〇,_。此時之重量平均分子量係指藉 由凝夥渗透層析法(GPC,gel permeati(m血。福叩响使 用聚苯乙烯(昭和電工(股)製造Shodex STANDARD SM- 105)之校準曲線所測定之重量平均分子量。該重量平均分 子量可使用日本分光(股)製造之凝膠滲透層析儀,並根據 以下之條件測定。 示差折射儀:RI-1530 泵:PU-1580 除氣器:DG-9-80-50 管柱烘箱:CO-1560 e 柱依序為 KF-802.5、KF-806Mx2、KF-StnIn the photosensitive resin composition of the present invention, (a) the test-soluble polymer is an alkali-soluble polymer containing an acid-requiring acid having an acid equivalent of 100 to _ and a weight average molecular weight of 5,000 to 500 Å. In order for the photosensitive resin composition to have developability or releasability with respect to the developer or the release liquid containing the aqueous test solution, the alkali-soluble polymer must have a carboxyl group. The acid equivalent is preferably (10) ~ deputy, more preferably 25 〇 ~ 45 〇. From the viewpoint of ensuring compatibility with other components in the solvent or the composition, particularly the (8) ethylenically unsaturated addition polymerizable monomer described later, it is possible to maintain developability or releasability. In terms of opinion, it is 6〇〇 or less. Here, the acid equivalent means a mass (gr_) of a base having a base of a ruthenium equivalent in the photosensitive resin composition. Further, the acid equivalent was measured by a potentiometric titration method using a Reporting Titrator (C〇M_555) of m〇I/L. The weight average molecular weight of the alkali-cooling south molecule is preferably from 5, 〇〇〇 to 50,000'000. It is 5,000 or more from the viewpoint of maintaining the thickness of the dry film resist layer uniformly to obtain the resistance to the developer, and 500, from the viewpoint of maintaining the developability of I33895.doc 13 200921275. the following. More preferably, the weight average molecular weight is 20,000 to i 〇〇, _. The weight average molecular weight at this time is determined by a calibration curve of condensate permeation chromatography (GPC, gel permeati (m blood. Fushun using polystyrene (Shodex STANDARD SM-105 manufactured by Showa Denko) The weight average molecular weight can be measured using a gel permeation chromatograph manufactured by JASCO Corporation, and determined according to the following conditions: Differential Refractometer: RI-1530 Pump: PU-1580 Deaerator: DG- 9-80-50 Column oven: CO-1560 e column is KF-802.5, KF-806Mx2, KF-Stn

溶離液:THF 較好的是驗溶性高分子為由後述之第一單體之至少一種 以f與Ϊ述之第二單體之至少一種以上所形成之共聚物。 第單體為分子中具有—個聚合性不飽和基之叛酸或酸 針。例如可列舉(甲基)丙稀酸、富馬酸、桂皮酸、丁婦 酸、伊康冑、馬來酸酐及馬來酸半S旨。其中,特別好的是 (曱基)丙稀酸。 匕處所明(曱基)丙烯酸表示丙烯酸及,或曱基丙烯酸。 下同。 第二單體係非酸性,且分子中具有至少一個聚合性不飽 和基之單體。例如可列舉:(甲基)丙烯酸甲醋,(甲基)丙 烯酉文乙S曰(甲基)丙烯酸正丙醋甲基)丙稀酸異丙醋, 133895.doc 200921275 (甲基)丙烯酸正丁酿,(甲基)丙烯酸異丁酿,(甲基)丙烯酸 第三丁酯,(甲基)丙烯酸2-羥乙酯,(甲基)丙烯酸2_羥丙 酯,(甲基)丙烯酸2-乙基己酯,(甲基)丙烯酸节基酯,乙 稀醇之醋類’例如乙酸乙稀醋、(甲基)丙婦腈、苯乙稀及 可聚合之苯乙烯衍生物。其中’特别好的是(甲基)丙烯酸甲 醋、(甲基)丙烯酸正丁醋、苯乙烯、(甲基)丙稀酸节基酿。 (a) 鹼溶性高分子相對於感光性樹脂組合物之總和的比 例為20〜90質量。/。之範圍,較好的是3〇〜7〇質量%。就利用 曝光、顯影所形成之光阻圖案具有作為光阻膜之特性,例 如於蓋孔、蝕刻及各種電鍍步驟中具有充分之耐受性之觀 點而言較好的是20質量%以上9〇質量。/。以下。 (b) 乙稀性不餘和加成聚合性單體 於本發明之感光性樹脂組合物中,就解析性及蓋孔性之 觀點而言’較好的是(b)乙烯性不飽和加成聚合性單體包含 選自以下述通式⑴所表示之化合物群中之至少—種化合 物、選自以⑼所表示之化合物群中之至少一種化合物及 選自以(III)所表示之化合物群中之至少一種化合物。 [化5] 0—Eluent: THF Preferably, the test polymer is a copolymer of at least one of a first monomer described later and at least one of f and a second monomer described below. The first monomer is a tickic acid or acid needle having a polymerizable unsaturated group in the molecule. For example, (meth)acrylic acid, fumaric acid, cinnamic acid, butyric acid, itaconide, maleic anhydride, and maleic acid are used. Among them, particularly preferred is (mercapto)acrylic acid. Acrylic acid refers to acrylic acid or thioglycolic acid. The same below. The second single system is non-acidic and has at least one polymerizable unsaturated group in the molecule. For example, (meth)acrylic acid methyl vinegar, (meth)acrylic acid bismuth s(meth)acrylic acid n-propyl ketone methyl) isopropyl isopropyl vinegar, 133895.doc 200921275 (meth)acrylic acid Brewing, isobutyl brewing (meth)acrylate, tert-butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, (meth)acrylic acid 2 Ethylhexyl ester, (meth)acrylic acid benzyl ester, ethylene glycol vinegar such as ethyl acetate acetonate, (methyl) acrylonitrile, styrene and polymerizable styrene derivatives. Among them, particularly preferred are (meth)acrylic acid methyl ketone, (meth)acrylic acid n-butyl vinegar, styrene, and (meth)acrylic acid arsenic. (a) The ratio of the alkali-soluble polymer to the total of the photosensitive resin composition is 20 to 90% by mass. /. The range is preferably from 3 〇 to 7 〇 mass%. The photoresist pattern formed by exposure and development has characteristics as a photoresist film, and is preferably 20% by mass or more from the viewpoint of sufficient resistance to capping, etching, and various plating steps. quality. /. the following. (b) Ethylene and addition polymerizable monomer In the photosensitive resin composition of the present invention, (b) ethylenic unsaturated addition is preferable from the viewpoint of analyticity and capping property. The polymerizable monomer comprises at least one compound selected from the group consisting of compounds represented by the following formula (1), at least one compound selected from the group consisting of (9), and a compound selected from the group consisting of (III) At least one compound in the population. [化5] 0—

H3C—C—CH3 Φ Ο一(A-0)m2 (B*0)n>4-C_C—CH? 133895.doc •15- 200921275 (RAR2分別獨立為氫原子或甲基。八及3表示碳數為2〜6之 伸烷基’該等可相同亦可不同,於該等不同之情形時, 3 (A-Ο)-及-(B-〇)-之重複單元之結構可無規則地構成, 亦可肷段構成。ml、m2、m3及m4為〇以上之整數’ mi+m2及m3+m4分別獨立為〇~8之整數,以+^ +以+以為 2〜8之整數。) [化6]H3C—C—CH3 Φ Ο1(A-0)m2 (B*0)n>4-C_C—CH? 133895.doc •15- 200921275 (RAR2 is independently a hydrogen atom or a methyl group. Eight and three represent carbon The number of alkylene groups of 2 to 6 may be the same or different. In these different cases, the structure of the repeating unit of 3 (A-Ο)- and -(B-〇)- may be irregularly The composition may be composed of segments. ml, m2, m3, and m4 are integers above '' mi+m2 and m3+m4 are each an integer of 〇~8, and +^ + is + is an integer of 2-8. ) [Chem. 6]

0—(C-0)mS-(D-0)m7(i-c=0—(C-0)mS-(D-0)m7(i-c=

h3c-c-ch3 =CH2 φ „ (II) (R3及r4分別獨立為氫原子或甲基。。及。表示碳數為2〜6之 伸烷基’該等可相同亦可不同,於該等不同之情形時, 含-(C-O)-及-(D-Ο)-之重複單元之結構可無規則地構成, 亦可嵌段構成。m5、m6、m7及m8為〇以上之整數, m5+m6&m7+m8分別獨立為〇〜28之整數,m5+m6+m7+m8 為10〜28之整數。) 133895.doc •16- 200921275 [化7] Ο ?_(E-〇)*n9-(P-〇)mn-C-C=CH2 H3C-C-CH3H3c-c-ch3 =CH2 φ „ (II) (R3 and r4 are each independently a hydrogen atom or a methyl group, and the alkyl group having a carbon number of 2 to 6 may be the same or different, When different, the structure of the repeating unit containing -(CO)- and -(D-Ο)- may be randomly formed or block-formed. m5, m6, m7 and m8 are integers above 〇, m5 + m6 &. m7 + m8 are each independently an integer of 〇~28, m5 + m6 + m7 + m8 is an integer of 10~28) 133895.doc • 16- 200921275 [of 7] Ο _ (E-square)? *n9-(P-〇)mn-CC=CH2 H3C-C-CH3

(ΠΙ) 〇-(E-〇)mi〇-(F-〇)m12-C-cicH;(ΠΙ) 〇-(E-〇)mi〇-(F-〇)m12-C-cicH;

(尺5及尺6分別獨立為氫原子或甲基。£及?表示碳數為2〜6之 伸烷基’該等可相同亦可不同,於該等不同之情形時, 含-(E-Ο)-及-(F-〇)_之重複單元之結構可無規則地構成,亦 可喪段構成19、ml0、mll及ml2為〇以上之整數, m9 + ml〇及心+⑽分別獨立為〇〜5〇之整數,m9 + mi〇 + mll+ml2為30〜50之整數。) 作為選自以上述式⑴所表示之群中之至少—種化合物之 ㈣例’ T列舉:2’2_雙{(4•丙_氧基聚乙稀氧基)苯基} 丙烧或2,2鲁甲基丙稀臨氧基聚乙峨)苯基}丙烧。 t 交好的是該化合物W所具有之聚乙烯氧基係選自單乙稀 氧基、二乙烯氧基、=『、膝每Λ 一乙烯乳基、四乙烯氧基、五乙烯氧 基'/、乙烯$基、七乙烯氧基及八乙烯氧基所組成之群中 之任一基的化合物。 另外,亦可列舉:2,2_雙{(4•丙歸醯氧基聚伸烧基氧基) 本基}鐵2,2·雙{(4'甲基丙烯醯氧基聚伸院基氧基)苯 基}丙院。作為該化合物所具有之聚伸院基氧基,可列舉 伸丙基氧基或伸乙基氧基與伸兩基氧基之混合物。該等中 133895.doc •17- 200921275 最好的是2,2-雙U4_甲基丙烯醯敦基二伸乙基氧基)苯基}丙 烷。 作為選自以上述式(I D所表示之群中之至少—種化合物 之具體例,可列舉:於雙酚A之兩端分別加成平均5莫耳之 環氧乙烷之聚乙二醇之二甲基丙烯酸酯(新中村化學工業 (股)製造NK ESTER BPE_500)或於雙紛a之兩端分別加成 平均6莫耳之環氧乙烧與平均2莫耳之環氧丙院之聚烧二醇 之二甲基丙晞酸酯。 作為選自以上述所表示之群中之至少—種化合物 之^體例’可列舉:於雙紛A之兩端分別加成平叫莫耳 之%乳乙烷之聚乙二醇之二甲基丙烯酸酯或於雙酚A之兩 端分別加成平均15莫耳之環氧乙燒與平均2莫耳之環氧丙 頑之聚烷二醇之二甲基丙烯酸酯。 於本發明之感純樹脂組合物中,其所包含之選自以上 述通式⑴所表示之化合物群中之至少-種化合物、選自以 ^逑通式TO所表示之化合物群中之至少_㈣合物及選 自:土述通式_所表示之化合物群中之至少一種化合物 之…十量’較好為感光性樹脂組合物中之5〜6()質量% 〜5:質量曰%。就表現高解析度、高蓋孔性之觀點 化井:好的疋該篁為1〇質量%以上,又,就抑制冷流及硬 τ 遲之靦點而έ較好的是該量為60質量% 以下 〇 選自以上述通式⑴所表示之化合物群中之至少一種化合 物、選自以上述通式(π) 所表不之化合物群中之至少一種 i33895.doc -J8- 200921275 化合物及選自以上述通式 弋(Π)所表不之化合物群中之至少 種化合物於(b)乙烯性不飽 量較好的是質量%〜_量%==早體申之合計含 上。進而更好的是80質量%以1更好的疋7〇質量%以 通之感光性樹脂組合物中所含有之選自以上述 。二Li 群,之至少一種化合物之量較好的是 質·旦:貝:广更好的是1〜2〇質量%,進而更好的是2〜1〇 就表現高解析度之觀點而言較好的是該量為Μ質 保持硬化膜之柔軟性之觀點而言較好的是該 里為30質置%以下。 同樣纟發明之感純樹脂組合物中所含有之選自 所表示之化合物群中之至少一種化 =疋〇·㈣質量%,更好的是】〜2〇質量%,進而更好的 :的:°ϋ。就表現高解析度、高蓋孔性之觀點而言較 灯的疋S亥罝為0,5質量。/。以上,祙彳姓 點而言較好的是該量為30質量硬化膜之柔軟性之觀 '、同樣’本發明之感光性樹脂組合物中所含有之選自以上 返通式_所表示之化合物群中之至少一種化合物之量較 子的是1〜30質量% ’更好的是5〜25質量%,進而更好的是 10〜2 0質量%。就表現高蓋孔性之觀點而言較好的是該量 為1質量%以上,就抑制冷流及硬化光阻膜之剥離延遲之 觀點而言較好的是該量為30質量%以下。 、另外,於(b)乙烯性不飽和加成聚合性單體中,除選自 以上述通式⑴所表示之化合物群中之至少一種化合物=選 133895.doc -19· 200921275 自以上述通式(π)所表示之化合物群中之至少一種化合物 及選自以上述通式(IIJ)所表示之化合物群中之至少一種化 合物以外,亦可使用如下所示之可光聚合之不飽和化合 物例:k可列舉.1)6_己二醇二(甲基)丙烯酸酷、1,4_環己 二醇基)丙烯酸酯、聚丙二醇二(^基)丙烯酸酯、聚 乙一醇一(甲基)丙烯酸酯、2_二(對羥苯基)丙烷二(甲基)丙 烯鲅S曰、丙二醇三(甲基)丙烯酸酯、三羥甲基丙烷三(甲 基)丙婦酸醋、聚氧基丙基三經甲基丙烧三(曱基)丙稀酸 曰聚氧基乙基二羥曱基丙烷三丙烯酸酯'季戊四醇四 (甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、三羥甲 土丙烷一縮水甘油醚二(甲基)丙烯酸酯、雙酚A二縮水甘 2醚二(甲基)丙烯酸酯、β_羥丙基U丙烯醯氧基)丙基鄰 苯甲S文S曰笨氧基聚乙二醇(甲基)丙婦酸酯、壬基苯氧 基聚乙二醇(甲基)丙烯酸酯、壬基苯氧基聚烷二醇(甲基) 丙烯酸醋、聚丙二醇單(甲基)丙烯酸醋、三乙二醇十二丙 二醇、於加成有氧丙稀之聚丙二醇進而兩端加成氧乙烤之 (於平均加成12莫耳之氧丙稀之聚丙二醇之兩端分別加成 平均3莫耳之氧乙烯)聚烷二醇之二甲基丙烯酸酯。 另外亦可列舉胺基曱酸酯化合物。作為胺基甲酸酯化合 物:例如可列舉··二異氰酸己二酯、甲苯二異氰酸酯或二 異氰酸醋化合4勿’例如二異氮酸2,2,4_三甲基己二醋,以 個刀子中具有羥基與(甲基)丙烯基之化合物,例如丙 烯酸2-經基丙g旨與寡丙二醇單曱基丙烯酸醋反應所生成之 胺基甲酸醋化合物。具體而言,例如二異氰酸己二酷與募 133895.doc -20. 200921275 丙二醇單甲基丙浠酸酯(日本油脂(股)製造,B】emmer PP1000)之反應物。該等可單獨使用,亦可併用2種以上。 本發明中所使用之(b)乙烯性不飽和加成聚合性單體對 於感光性樹脂組合物之總和之比例為5〜70質量。/〇之範圍, 較好的是10〜60質量。^就靈敏度、解析度、密著性提昇 之觀點而言較好的是5質量%以上,又,就抑制冷流及硬 化光阻膜之剝離延遲之觀點而言較好的是7 〇質量%以下。 (c)光聚合起始劑 於本發明之感光性樹脂組合物中,可使用眾所周知者作 為(c)光聚合起始劑。本發明之感光性樹脂組合物中所含有 之(c)光聚合起始劑之量為0.01〜3〇質量%之範圍,更好的 範圍為0.0 5〜10質量%。就獲得充分之靈敏度之觀點而言較 好的疋0,0 1質量%以上,又,就使光充分地穿透至光阻膜 底面’獲得良好之高解析性之觀點而言較好的是30質量% 以下。 作為此種光聚合起始劑’可列舉:2_乙基蒽醌、八乙基 蒽醌、1,2-苯并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,3-二 苯基恩醌、1_氣蒽醌、2-氣蒽醌、2-甲基蒽醌、1,4_萘 醌、9,1〇_菲醌、2_甲基-14»萘醌、9,1〇_菲醌、2_曱基 萘醌、2,3-二曱基蒽醌、3-氣-2-甲基蒽醌等醌類;芳香族 酮類’例如二苯曱酮、米其勒酮[4,4,_雙(二甲胺基)二苯曱 嗣]4,4'_雙(二乙胺基)二笨曱酮;安息香或安息香醚類, 例如女息香、安息香乙醚、安息香苯醚、曱基安息香、乙 基安息香;二烷基縮酮類,例如苄基二曱基縮酮、苄基二 133895.doc -21 . 200921275 乙基縮酮;噻嘴酮類’例如二乙基噻噸_、氣嗟嘴嗣;二 烷基胺基安息香酸酯類,例如二甲基胺基安息香酸乙酯· 肟酯類,例如1-苯基-1,2-丙二酮-2-0-笨曱醯基肟、丨_笨 基-1,2-丙二嗣-2-(0-乙氧艘基)將;咯吩二聚物,例如\ (鄰氣苯基)-4,5_二苯基咪唾基二聚物、2•(鄰氯苯基)竹 雙-(間甲氧基苯細嗤基二聚物、2_(對甲氧基苯基)_4’5 二 苯基咪吐基二聚物。該等化合物可單獨使用亦可併用 2種以上。 於本發明之感光性樹脂組合物中,纟有以下述通式Μ) 所表示…化合物作為⑷光聚合起始劑係本發明:較好 之實施形態。本發明之感光性樹脂組合物中所含有… 咬化合物之量為(MH〜30質量%,較好的是— Ο質量二 就獲得充分之靈敏度之觀點而言較好 θ 、 平乂对的疋该置為0. 〇 1質量 %以上,又,就使光充分地穿透 尤I且膜底面,從而獲得 良好之高解析性之觀點而言軔权 a 。k好的是該量為30質量%以 下。 [化8](The ruler 5 and the ruler 6 are each independently a hydrogen atom or a methyl group. £ and ? represent an alkylene group having a carbon number of 2 to 6', which may be the same or different, and in the case of the difference, -(E) The structure of the repeating unit of -Ο)- and -(F-〇)_ can be constructed irregularly, and the composition of the mourning segment 19, ml0, mll and ml2 are integers above ,, m9 + ml〇 and heart + (10) respectively Independently an integer of 〇~5〇, m9 + mi〇+ mll+ml2 is an integer of 30 to 50.) (4) as at least one compound selected from the group represented by the above formula (1) 'T enumeration: 2 '2_双{(4•Pro-oxypolyethyleneoxy)phenyl}propane or 2,2-lu-methylpropenyloxypolyethylidene)phenyl}propane. t is a good result that the polyvinyloxy group of the compound W is selected from the group consisting of monoethyloxy, divinyloxy, = ", knees per oxime, ethylene vinyl, tetravinyloxy, pentavinyloxy" a compound of any one of the group consisting of ethylene, hexaethyleneoxy and octaethyleneoxy. In addition, it can also be exemplified: 2,2_double {(4•propyl-anthraceneoxy-polyoxyalkyloxy) ketone}iron 2,2·double{(4' methacryloxy-oxyl-concentration Oxy)phenyl}propyl. As the polyoxyl group oxy group which the compound has, a propyloxy group or a mixture of an ethyloxy group and a benzyloxy group may be mentioned. Among these, 133895.doc • 17- 200921275 The most preferred is 2,2-bis U4-methacrylinyldiethyloxy)phenyl}propane. Specific examples of the at least one compound selected from the group represented by the above formula (ID) include polyethylene glycol having an average of 5 moles of ethylene oxide added to both ends of bisphenol A. Dimethacrylate (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) NK ESTER BPE_500 or an average of 6 moles of Ethylene Ethylene and an average of 2 moles of Ethylene-Polypropylene The dimethyl propylene phthalate of the diol is exemplified as a compound of at least one selected from the group represented by the above-mentioned ones. Ethylene glycol polyethylene glycol dimethacrylate or bisphenol A is added to the average of 15 moles of ethylene oxide and 2 moles of epoxy-propylene polyalkylene glycol The sensible resin composition of the present invention comprises at least one compound selected from the group consisting of the compound represented by the above formula (1), and is selected from the group consisting of the formula TO. At least a _(tetra) compound in the compound group and at least one compound selected from the group consisting of: The tenth amount is preferably 5 to 6 (% by mass) to 5: mass 曰% in the photosensitive resin composition. The viewpoint of high resolution and high capping property is good: the 疋 is 1 5% by mass or more, and it is preferable that the amount of 60% by mass or less is selected from the group of compounds represented by the above formula (1), And at least one compound selected from the group consisting of the above formula (π), i33895.doc-J8-200921275, and at least one compound selected from the group consisting of the above formula (弋) (b) The ethylenic unsatisfactory amount is preferably % by mass% of the amount of the early body, and more preferably 80% by mass to 1% by mass of 疋7〇% by mass. The amount of at least one compound selected from the group consisting of the above-mentioned two Li groups is preferably a mass/denier: bei: broadly more preferably 1 to 2% by mass, and even more preferably 2 to 1 〇 is preferable from the viewpoint of exhibiting high resolution, and the amount is preferably from the viewpoint of maintaining the softness of the cured film. In the same manner, at least one of the compound groups selected from the group of the compounds represented by the invention is contained in the sensible resin composition of the invention, and at least one of the compounds is represented by 疋〇·(4)% by mass, more preferably 〜2. 〇% by mass, and then better: °ϋ. In terms of high resolution and high capping, the 疋S罝 of the lamp is 0,5 mass. It is preferable that the amount is a view of the flexibility of the 30-mass cured film, and the same as the at least one compound selected from the group of compounds represented by the above formula _ contained in the photosensitive resin composition of the present invention. The amount is preferably 1 to 30% by mass, more preferably 5 to 25% by mass, and still more preferably 10 to 20% by mass. It is preferable from the viewpoint of exhibiting high capping property. When the amount is 1% by mass or more, it is preferable that the amount is 30% by mass or less from the viewpoint of suppressing the peeling delay of the cold flow and the cured photoresist film. Further, in the (b) ethylenically unsaturated addition polymerizable monomer, at least one compound selected from the group consisting of the compound represented by the above formula (1) = 133895.doc -19· 200921275 The photopolymerizable unsaturated compound shown below may be used in addition to at least one compound selected from the group consisting of the compound represented by the formula (IIJ) and at least one compound selected from the group consisting of the compound represented by the above formula (IIJ). Example: k can be enumerated. 1) 6-hexanediol di(meth)acrylic acid, 1,4_cyclohexanediol) acrylate, polypropylene glycol di(meth) acrylate, polyethylene glycol one (a Acrylate, 2_bis(p-hydroxyphenyl)propane di(meth)acrylofluorene S曰, propylene glycol tri(meth)acrylate, trimethylolpropane tri(methyl)propane vinegar, poly Oxypropyl propyl trimethyl methacrylate tris(decyl) acrylate 曰 polyoxyethyl dihydroxy decyl propane triacrylate 'pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate Ester, trimethylolpropane-glycidyl ether di(meth)acrylate, Bisphenol A diglycidyl diether di(meth) acrylate, β hydroxypropyl U propylene oxy) propyl phthalate S S 曰 氧基 oxy polyethylene glycol (methyl) propyl benzoic acid Ester, nonylphenoxy polyethylene glycol (meth) acrylate, nonyl phenoxy polyalkylene glycol (meth) acrylate vinegar, polypropylene glycol mono (meth) acrylate vinegar, triethylene glycol Propylene glycol, polypropylene glycol added to aerobic propylene and then added with oxygen bake at both ends (addition of an average of 3 moles of oxyethylene to the two ends of the polypropylene glycol with an average of 12 moles of oxypropylene) Dimethacrylate of polyalkylene glycol. Further, an amino phthalate compound can also be mentioned. Examples of the urethane compound include, for example, hexamethylene diisocyanate, toluene diisocyanate or bishydroxyisocyanate 4, such as diisoxamic acid 2,2,4-trimethylhexyl Vinegar, a urethane compound formed by reacting a compound having a hydroxyl group and a (meth)acryl group in a knife, for example, 2-acryloyl acrylate to oligodiol monomethacrylate. Specifically, for example, a reaction product of diisocyanate and 133895.doc -20. 200921275 propylene glycol monomethylpropionate (manufactured by Nippon Oil & Fats Co., Ltd., B) emmer PP1000). These may be used alone or in combination of two or more. The ratio of the (b) ethylenically unsaturated addition polymerizable monomer used in the present invention to the total of the photosensitive resin composition is 5 to 70 mass. / 〇 range, preferably 10 to 60 mass. In terms of sensitivity, resolution, and adhesion improvement, it is preferably 5% by mass or more, and in terms of suppressing the peeling delay of the cold flow and the cured photoresist film, it is preferably 7 〇 mass%. the following. (c) Photopolymerization initiator In the photosensitive resin composition of the present invention, a well-known person can be used as (c) a photopolymerization initiator. The amount of the (c) photopolymerization initiator contained in the photosensitive resin composition of the present invention is in the range of 0.01 to 3 % by mass, more preferably in the range of 0.0 5 to 10% by mass. From the viewpoint of obtaining sufficient sensitivity, it is preferably 疋0,0 1% by mass or more, and it is preferable that light is sufficiently penetrated to the bottom surface of the photoresist film to obtain good high resolution. 30% by mass or less. As such a photopolymerization initiator, 2' ethyl hydrazine, octaethyl hydrazine, 1,2-benzopyrene, 2,3-benzopyrene, 2-phenyl fluorene, 2,3-Diphenyl enanium, 1_gas oxime, 2-gas oxime, 2-methylindole, 1,4-naphthoquinone, 9,1 〇 phenanthrenequinone, 2-methyl-14 »naphthoquinone, 9,1〇_phenanthrenequinone, 2_mercaptophthylquinone, 2,3-dimercaptopurine, 3-gas-2-methylindole, etc.; aromatic ketones such as Phenyl ketone, michelitone [4,4, bis(dimethylamino)diphenyl hydrazide] 4,4'-bis(diethylamino) dioxin; benzoin or benzoin ether, for example Female scent, benzoin ethyl ether, benzoin phenyl ether, decyl benzoin, ethyl benzoin; dialkyl ketals, such as benzyl didecyl ketal, benzyl di 133895.doc -21 . 200921275 ethyl ketal; Thiophenones such as diethyl thioxanthene, gas oxime oxime; dialkylamino benzoic acid esters such as dimethylamino benzoic acid ethyl ester oxime esters such as 1-phenyl-1 , 2-propanedione-2-0-alum-based hydrazine, hydrazine-stupyl-1,2-propanedifluorene-2-(0-ethoxyxoyl); phenanthrene dimer, eg (ozone benzene -4,5-diphenylmeridyl dimer, 2•(o-chlorophenyl)-bis-(m-methoxyphenyl fine fluorenyl dimer, 2_(p-methoxyphenyl)_4 '5-diphenylmipyl dimer. These compounds may be used alone or in combination of two or more. In the photosensitive resin composition of the present invention, the compound is represented by the following formula: (4) Photopolymerization initiators are the invention: preferred embodiments. In the photosensitive resin composition of the present invention, the amount of the biting compound is (MH to 30% by mass, preferably - the mass of the second is good θ, and the 乂 is correct. The value is set to 0. 〇1% by mass or more, and the light is sufficiently penetrated by the surface of the film to obtain a good high resolution. % below. [Chemistry 8]

(IV) 比啶基、烷氧基或經取代 可列舉:吖啶、9-苯基吖 (對乙基苯基)吖啶、9_(對異(IV) a pyridyl group, an alkoxy group or a substituted group: acridine, 9-phenylindole (p-ethylphenyl) acridine, 9_(different

(式中,r7為氫、烷基、芳基、DI 之烷基。) 作為上述之吖啶化合物,例如 啶、9-(對曱基苯基)吖啶、9_ 133895.doc -22- 200921275 丙基苯基)吖啶、9-(對正丁基苯基)吖啶、9-(對第三丁基苯 基)吖啶、9-(對甲氡基笨基)吖啶、9-(對乙氧基笨基)。丫 啶、9-(對乙醯基苯基)吖啶、9-(對二曱胺基苯基)吖啶、9_ (對氰苯基苯基)吖啶、9-(對氣二苯基)吖啶、9-(對漠苯基) σ丫啶、9-(間甲基苯基)吖啶、9-(間正丙基苯基)吖咬、9_ (間異丙基苯基)吖啶、9-(間正丁基苯基)吖啶、9_(間第三 丁基苯基)吖啶、9-(間甲氧基苯基)吖啶、9_(間乙氧基苯 基)吖啶、9-(間乙醯基苯基)吖啶、9-(間二曱胺基笨基)吖 疋9-(間一乙胺基本基)〇丫咬、9_(氰苯基)0丫 0定、9_(間氯 苯基)吖啶、9-(間溴苯基)吖啶、9-曱基吖啶、9_乙基。丫 啶、9-正丙基吖啶、9·異丙基吖啶、9_氰乙基吖啶、9_羥 乙基吖啶、9-氣乙基吖啶、9_甲氧基吖啶、9_乙氧基吖 、9-正丙氧基吖啶、9_異丙氧基吖啶、 9_氯乙氧基吖 °定。其中,較理想的是9-苯基吖啶。 (d) Ν-芳基-α-胺基酸化合物 ’較好的是感光樹脂組(wherein, r7 is an alkyl group of hydrogen, an alkyl group, an aryl group or a DI.) As the acridine compound described above, for example, pyridine, 9-(p-nonylphenyl)acridine, 9-133895.doc -22-200921275 Propyl phenyl) acridine, 9-(p-n-butylphenyl) acridine, 9-(p-tert-butylphenyl) acridine, 9-(p-methylphenyl) acridine, 9- (for ethoxylated stupyl). Acridine, 9-(p-ethoxyphenyl) acridine, 9-(p-diaminophenyl) acridine, 9-(p-cyanophenylphenyl) acridine, 9-(p-diphenyl) Acridine, 9-(p-diylphenyl) σ acridine, 9-(m-methylphenyl) acridine, 9-(meta-propylphenyl) sputum, 9-(m-isopropylphenyl) Acridine, 9-(m-butylphenyl)acridine, 9-(m-butylphenyl)acridine, 9-(m-methoxyphenyl)acridine, 9-(m-ethoxyphenyl) Acridine, 9-(m-decylphenyl) acridine, 9-(m-diaminoamino)phenyl 9-(m-ethylamine basic) bite, 9-(cyanophenyl) 0丫0, 9-(m-chlorophenyl)acridine, 9-(m-bromophenyl)acridine, 9-fluorenyl acridine, 9-ethyl. Acridine, 9-n-propyl acridine, 9-isopropyl acridine, 9-cyanoethyl acridine, 9-hydroxyethyl acridine, 9-ethylethyl acridine, 9-methoxy acridine 9-ethoxy hydrazine, 9-n-propoxy acridine, 9-isopropoxy acridine, 9-chloroethoxy oxime. Among them, 9-phenyl acridine is preferred. (d) Ν-aryl-α-amino acid compound ’ is preferably a photosensitive resin group

較好的是3質量%以下。 於本發明之感光性樹脂組合物中, 合物中含有0.01〜3質量%之氺芳基-α_ 基-OC-脸其/μ Α® a曰.上_It is preferably 3% by mass or less. In the photosensitive resin composition of the present invention, the compound contains 0.01 to 3% by mass of fluorenyl-α-yl-OC-face/μ Α® a 曰.

(正丙基)苯基甘胺酸、N- S物,例如可列舉:N-苯基甘 胺酸、N-乙基-N-苯基甘胺酸、N_ 、N_(正丁基)·苯基甘胺酸、正(2_ 133895.doc -23· 200921275 曱氧基乙基)-N-苯基甘胺酸、N_甲基_N_苯基丙胺酸、N_ 乙基-N-苯基丙胺酸、N-(正丙基)苯基丙胺酸、N-(正丁 基)-N-苯基丙胺酸、N-曱基苯基纈胺酸、N-曱基-N-苯 基白胺酸、N-甲基(對甲苯基)甘胺酸、N_乙基_N_(對曱 苯基)甘胺酸、N-(正丙基)(對甲苯基)甘胺酸、N-(正丁 基)-N-(對甲苯基)甘胺酸、N_甲基_N_(對氯苯基)甘胺酸、 N-乙基-N-(對氣苯基)甘胺酸、N_(正丙基)_N_(對氯苯基)甘 胺酸、N-(正丁基)_N_(對氯苯基)甘胺酸、N_甲基_N_(對溴 苯基)甘胺酸、N-乙基-N-(對溴苯基)甘胺酸、N_(正丙基)_ N-(對漢笨基)甘胺酸、N_(正丁基)_N_(對溴苯基)甘胺酸、 N,NI_二苯基甘胺酸、N-(對氯苯基)甘胺酸、N-(對溴苯基) 甘胺鲅、N-(鄰氯苯基)甘胺酸。其中,特別好的是N_苯基 甘胺酸。 〇) _素化合物 於本發明之感光性樹脂組合物中,較好的是感光性樹脂 組合物中含有GG1〜3f量%之_素化合物。該_素化合物 子之3里為0 · 1〜1 5質量%。就光硬化性之觀點而言較 好的疋-素化合物之含量為G.G1質量%以上,就光阻膜之 保存穩疋性之觀點而言較好的是ii素化合物之含量為3質 量%以下。 、 作為齒素化合物,例如可列舉:漠戊燒、異戊基漠、溴 化異丁烯、溴化乙烯、三苯曱基溴、苄基溴、二溴甲烷、 二、、真 一广本基颯、四溴化碳、磷酸三(2,3-二溴丙基)酯、三 氣乙隨胺、碰 碘戊烷(amyl iodide)、異 丁基碘(is〇butyl 133895.doc •24- 200921275 iodide)、三氯_2,2-雙(對氣苯基)乙烷、氯化三嗪化合 物’其中可特別好地使用三溴甲苯基砜。 (0其他成分 為了提昇本發明中之感光性樹脂組合物之操作性,亦可 添加無色染料或著色物質。 作為無色染料,可列舉:三(4_二曱胺基_2_甲苯基)曱烷 (別名:無色結晶紫)、三(4_二曱胺基_2_甲苯基)甲烷(別 名:無色孔雀綠)、熒烷染料。其中,於使用無色結晶紫 之情形時’對比度良好而較好。於感光性樹脂組合物中含 有無色染料之情形時時’其含量較好的是01〜10質量%。 :::見對比度之觀點而言較好的是無色染料之含量為01 質里%以上’ X ’就維持保存穩定性之觀點而言較好的是 無色染料之含量為〗〇質量%以下。 於感光性樹脂組合物中 言,組合使用無色染料與上 好之實施形態。 ’就密著性及對比度之觀點而 述(e)函素化合物係本發明之較 A、二例如可列舉:品紅、献菁綠、黃金胺鹽 ;雀::、.Γ结晶紫1基撥、尼祿藍2B、維多利亞藍、 Γ化學(股)製造AiZen(註冊商標)鶴C删 N)、驗性藍2〇、鑽石綠(保土 A哪(註冊商標)DIAm〇Nd咖咖 (版)氣&amp; 合物中含有著色物質 )。於感光性樹脂組 o.oow質量。/。。。,。01質量二時,其添加量較好的是 果,1質量。Α β上之含量有提昇操作性之效 以下之含量有維持保存穩定性之效果。 133895.doc -25· 200921275 延阳,約i提昇本發明之感光性樹脂組合物之熱穩定 性、保存穩定性,亦可於感光性樹脂組合物中添加選自^ 自由基聚合抑制劑、苯并三唑類及羧基苯并三唑類所組成 之群中之至少一種以上之化合物。 ’ 作為此種自由基聚合抑制劑,例如可列舉:肖甲氧基苯 齡、對苯二紛、鄰苯三紛、蔡胺、第三丁基兒茶齡、氣: 亞銅、2,6-二-第三丁基_對曱齡、2,2,_亞甲基雙㈠·甲基6 第三丁基苯齡)、2,2:亞甲基雙(4_乙基_6•第三丁基苯^)、 亞硝基苯基羥胺鋁鹽及二苯基亞硝基胺等。 另外’作為苯并三唾類,例如可列舉:i 2 3苯、,一 唑、1-氣-12,3-苯并三嗤、雙(N士 胺其开二 1 9 1 ^ ϋ - , ^ 已基)胺基亞〒基_ ,’3-本开二唾、雙(Ν·2_乙基己基)胺基亞甲基] 唑及雙(Ν-2-羥基乙基)胺基亞甲 1本开二。坐等。 另外,作為幾基苯并三唾類,例如 】,2,3-苯并三唑、5_羧基 午.羧基— 其u、 録I2,3·本开三唾、N-(N,N-二.2_己 土己基)胺基亞甲基幾基震龙一 其、吐甘 羧基本开二唑、N-(N,队二_2.羥美广 基德基亞甲基羧基苯并三唾及 N_ 土 基伸乙基羧基苯并三唑等。 ,一__乙基己基)胺 自由基聚合抑制劑、笼^ c &amp; .,,θ 开二唑類及羧基苯并三唑類之人 汁添加I較好的是0.01〜3質晋〇/ s 頁之5 钟神;、。’更好的是0.05〜1質量〇/。 '賦予感光性樹赌組合物伴 0 該量為0.01質量%以上J存^性巧點而言較好的是 好的是該量為3質量%以下。、持i敏度之觀點而言更 於本發明之感光性樹脂組合物中亦可視需要含有塑化 133895.doc •26- 200921275 劑。作為此種添加劑,例如可列舉:聚 醇、聚氧丙婦聚氧乙_、聚氧乙稀單曱,、聚氧丙:: 甲鍵、聚氧乙料氧丙烯單甲醚、聚氧乙稀單乙峻、= 丙烯單乙鱗、聚氧乙烯聚氧丙稀單乙喊等二醇·喊類: 苯二甲酸二乙醋等鄰苯二甲酸酷類,_甲苯項醯胺,對甲 苯:Γ乙棒樣酸三丁棒樣酸三乙醋,乙酿基摔樣酸 二乙知,乙酿基檸檬酸三正丙醋,乙醯基擰檬酸 酯。 感光性樹脂組合物中所含有之塑化劑等添加劑之量較好 的是5〜50質量% ’更好的是5〜3〇質量%。就抑制顯影時間 之L遲冑予硬化膜柔軟性之觀點而言較好的是$質量% 以上’又’就抑制硬化不^或冷流之觀點而言較好的是^ 質量%以下。 本發明之感光性樹脂積層體包括感光性樹脂層與支持該 層之支持體’亦可視需要於與感光性樹脂層之支持體相: 側之表©含有保護層。作為此處所使用之支持體,較理想 的是使自曝光光源所放射之光穿透之透明性者。作為此種 支持體’例如可列舉:聚對苯二尹酸乙二醋膜、聚乙婦醇 膜、聚氯乙烯膜、氯乙烯共聚物膜、聚偏二氣乙烯膜、偏 二氯乙烯共聚合臈、聚甲基丙烯酸甲酯共聚物膜、聚苯乙 烯膜、聚丙烯腈膜、苯乙烯共聚物薄膜、聚醯胺膜、纖維 素衍生物膜。§亥荨膜亦可視需要使用經延伸者。較好的是 霧值(haze)為5以下者。膜之厚度較薄則於圖像形成性及經 濟性方面有利’但必須維持強度,因此較好的是使用 I33895.doc -27· 200921275 1 0〜30 μηι者。 另外,感光性樹脂積層體中所使用之保護層之重要之特 性係較之支持體與感光性樹脂層之密著力,保護層與感光 性樹脂層之密著力充分小’彳容易地剝離。例如,可較好 地使用聚乙烯臈、聚丙烯膜作為保護 叉3又,可使用日本 專利特開昭59-202457號公報中所示之剝離性優里之膜。 保護層之膜厚較好的W μιη,更好的以〜 本發明之感光性樹脂積層體中之感光性樹脂層之厚度根據 用途而不同,較好的是5〜100 μΐΏ,更好的是7〜6〇㈣,且 越4解析度越提昇,又,越厚膜強度越提昇。 依序積層支持體、感光性樹脂層及視需要之保護層而製 作本發明之感光性樹脂積層體之方法可採用先前眾·知 之方法。 例如,將用於感光性樹脂層中之感光性樹脂組合物與溶 解該等之溶劑混合而製成均句之溶液,首先使用棒式塗佈 機或輥式塗佈機將該溶液塗佈於支持體上並加以乾燥,從 而於支持體上積層包含感光性樹脂組合物之感光性樹脂 層。 繼而,可視需要將保護層層壓於感光性樹脂層上,藉此 製作感光性樹脂積層體。 作為上述溶劑,可列舉以甲基乙基酮(ΜΕΚ)為代表之酮 類’以及以甲醇、乙醇及異丙醇為代表之醇類。較好的是 以使塗佈於支持體上之感光性樹脂組合物之溶液黏度於2 5 C下為500〜4000 mPa之方式將上述溶劑添加於感光性樹脂 133895.doc •28· 200921275 組合物中。 &lt;光阻圖案形成方法&gt; 使用本發明之感光性樹脂積層體之光關案可藉由包含 積層步驟、曝光步驟及顯影步驟之步驟而形成。下述表示 具體方法之一例。 作為基板(被加工基材),於以製造印刷電路板為目的之 情形時使用㈣積層板,又,於以製造凹凸基材為目的之 情形時使用玻璃基材,例如可列舉:t榮顯示器面板用基 材或表面電解顯示器基材、有粗密封蓋㈣形成貫通孔 之石夕晶圓及陶究基材。所謂電漿顯示器用基材係指於玻璃 上形成電極後,塗佈介電體層’冑而塗佈隔離壁用玻璃聚 (glass paste),並對隔離壁用玻璃漿部分實施噴砂加工而 形成隔離壁之基材。該等基板經過噴砂步驟後成為凹凸基 材。 首先’使用層合機進行積層步驟。於感光性樹脂積層體 具有保護層之情形時,將保護層剝離後,用層合機將該感 光性樹脂積層體之包含感光性樹脂組合物之層加熱壓著積 s於基板表面,形成感光性樹脂層。於此情形時,感光性 樹脂層可僅形成於基板表面之單面,亦可形成於雙面。此 時之加熱溫度通常為40〜16(rc。又,藉由進行二次以上該 加熱壓著可使密著性及耐化學性提昇。此時,亦可使用具 備二段連動之輥之二段式層合機進行壓著,亦可反覆幾2 穿過輥而進行壓著。 繼而使用曝光機進行曝光步驟。若有必要則將支持體剝 133895.doc -29- 200921275 離,利用活性光透過光罩進行曝光。曝光量由光源照度及 曝光時間決定。亦可使用光量計進行測定。 另外,於曝光步财亦可使用直騎圖曝光方法。直接 繪圖曝光係不使用光罩而於基板上直接緣圖進行曝光之方 式。作為光源,例如可使用波長為35〇〜41〇 nm之半導體雷 射或超高壓水銀燈。繪圖圖案由電腦控制,此時之曝光量 由光源照度及基板之移動速度而決定。 繼而使用顯影裝置進行顯影步驟。曝光後,於感光性樹 脂層上具有支持體之情形時,視需要將其除去,繼而使用 驗性水溶液之顯影液將未曝光部顯影去除,從而獲得光阻 圖像。使用Na2C〇4K2C03之水溶液作為驗性水溶液。根 據感光性樹脂層之特性來選擇該等水溶液,通常使用 〇:質量%之濃纟、2G〜㈣之叫叫水溶液。於該驗性 水夜中’亦可混入表面活性劑、消泡劑、用於促進顯影 之少量有機溶劑。 利用述步驟可獲得光阻圖案,亦可視情況進而進行 1曰00 300 C之加熱步驟。藉由實施該加熱步驟,可進一步 提昇耐化學性。加熱係制熱風、紅外線或遠紅外線之= 式的加熱爐。 〈使用直接繪圖曝光方式之光阻圖案形成方法〉 以使感光性树脂層之厚度成為3〇叫之方式將感光性樹 脂組合物塗佈於支持體上並對其進行乾燥,從而於支持體 f積層包含感光性樹脂組合物之感光性樹脂層。繼而將保 遵層層壓㈣光性樹脂層上,藉此製作感光性樹脂積層 133895.doc •30· 200921275 體。 將由上述之步驟所獲得之感光性樹脂積層體之保護層剝 離後’使用層合機將感光性樹脂層加熱層麼於經喷砂刷磨 (曰本研削低粒(股)製造,SakurandamA(註冊商標)#F220P) 之銅厚35 μηι之銅箔積層板上,從而獲得附著有感光性樹 脂層之銅箔積層板。 使用直接繪圖式曝光裝置(曰立Via Mechanics(股)製造, DI曝光機DE-1AH)’並用h線(405 nm)以照度1〇 mw/cm2以 上雷射掃描方向之掃描速度為2 cm/秒以上’更好的是 照度15 mw/cm2以上、雷射掃描方向之掃描速度為3 cm/秒 以上,進而更好的是照度25 mW/cm2以上、雷射掃描方向 之掃描速度為4 cm/秒以上之條件對所獲得之附著有感光 性樹脂層之銅箔積層板之感光性樹脂層進行曝光。藉由以 照度10 mW/cm2以上、雷射掃描方向之掃描速度為2⑽/秒 以上之速度進行曝光可提昇良率。 繼而,將支持體剝離後,使用鹼性顯影機(富士機工製 造,乾膜(dry film)用顯影機)並以最小顯影時間之2倍時間 喷射30°C之1質量。/。之叫叫水溶液(噴魔:〇22 Μρ^而將 未曝光之感光性樹脂層溶解去除,且以與最小顯影時間相 同之時間進行水洗(噴壓:G.2 MPa)、乾燥,從而形成光阻 圖案。 &lt;導線之製造方法、印刷電路板之製造方法&gt; 本發明之印刷電路板之製造方法係於使用銅落積層板或 可撓性基板作為基板之上述光阻圖案形成方法之後,經由 133895.doc 31 200921275 以下之步驟進行。 首先’使用蝕刻法或電鍍法等已知 露出之基板之銅面上形成導線。 &amp;於猎由顯影而 其後,使用具有較顯影液 索白其u “ 見強之鹼性的水溶液將光阻圖 案自土板上剝離,從而獲得所需之印刷 用之檢性水溶液(以下亦稱為「剝離液」)並=離 •S /± « ώ 」)並無特別限定,(N-propyl) phenylglycine and N-S, for example, N-phenylglycine, N-ethyl-N-phenylglycine, N_, N_(n-butyl)· Phenylglycine, Zheng (2_ 133895.doc -23· 200921275 oxiranylethyl)-N-phenylglycine, N_methyl_N_phenylalanine, N_ethyl-N-benzene Alanine, N-(n-propyl)phenylalanine, N-(n-butyl)-N-phenylalanine, N-nonylphenylproline, N-fluorenyl-N-phenyl Aleucine, N-methyl(p-tolyl)glycine, N_ethyl_N_(p-phenylene)glycine, N-(n-propyl)(p-tolyl)glycine, N -(n-butyl)-N-(p-tolyl)glycine, N-methyl_N_(p-chlorophenyl)glycine, N-ethyl-N-(p-phenyl)glycine , N_(n-propyl)_N_(p-chlorophenyl)glycine, N-(n-butyl)_N_(p-chlorophenyl)glycine, N-methyl_N_(p-bromophenyl)glycine Acid, N-ethyl-N-(p-bromophenyl)glycine, N_(n-propyl)_N-(p-bromo)glycine, N-(n-butyl)_N_(p-bromophenyl) Glycine, N, NI_diphenylglycine, N-(p-chlorophenyl)glycine, N-(p-bromophenyl) Kowloon amine, N- (o-chlorophenyl) glycine. Among them, N-phenylglycine is particularly preferred. In the photosensitive resin composition of the present invention, it is preferred that the photosensitive resin composition contains γ1 to 3f% of the compound. The _ _ compound has 3 in the range of 0 · 1 to 15 mass %. The content of the bismuth-based compound which is preferable from the viewpoint of photocurability is G.G1% by mass or more, and it is preferable that the content of the ii-based compound is 3 mass from the viewpoint of storage stability of the photoresist film. %the following. Examples of the dentate compound include: dimethyl pentoxide, isoamyl desert, brominated isobutylene, ethylene bromide, triphenylsulfonyl bromide, benzyl bromide, dibromomethane, di, sigma Carbon bromide, tris(2,3-dibromopropyl) phosphate, tris-hexane with amine, amyl iodide, isobutyl iodide (is〇butyl 133895.doc •24- 200921275 iodide) Trichloro-2,2-bis(p-phenylphenyl)ethane, chlorinated triazine compound', among which tribromotolylsulfone can be used particularly well. (0 Other components In order to improve the handleability of the photosensitive resin composition of the present invention, a leuco dye or a coloring matter may be added. As the leuco dye, tris(4-diaminoguanyl-2-methylphenyl) hydrazine may be mentioned. Alkane (alias: colorless crystal violet), tris(4-diaminoguanyl-2-methylphenyl)methane (alias: colorless malachite green), fluoran dye, in which case the contrast is good when using colorless crystal violet Preferably, when the photosensitive resin composition contains a leuco dye, the content thereof is preferably from 01 to 10% by mass. ::: From the viewpoint of contrast, it is preferred that the content of the leuco dye is 01. From the viewpoint of maintaining the storage stability, it is preferable that the content of the leuco dye is 〇 〇 by mass or less. In the photosensitive resin composition, a leuco dye is used in combination with the above preferred embodiment. 'E. From the viewpoint of adhesion and contrast, (e) a functional compound is a comparative example of A and 2 of the present invention: magenta, cyanine green, and gold amine salt; and fry::, Γ crystal violet 1 base Dial, Nero Blue 2B, Victoria Blue, Γ AiZen (registered trademark) crane C-cut N), blue tester 2, diamond green (protective soil A) (registered trademark) DIAm〇Nd coffee (version) gas &amp; compound contains coloring matter ). In the photosensitive resin group o.oow quality. /. . . ,. When the quality is 01, the added amount is better, 1 mass. The content of Αβ has an effect of improving the operability. The following contents have the effect of maintaining storage stability. 133895.doc -25· 200921275 Yanyang, about improving the thermal stability and storage stability of the photosensitive resin composition of the present invention, and adding a radical polymerization inhibitor, benzene to the photosensitive resin composition. And at least one or more compounds selected from the group consisting of triazoles and carboxybenzotriazoles. 'As such a radical polymerization inhibitor, for example, succinyloxybenzene, p-benzoic acid, o-benzotriene, cedaramine, t-butyl catechin, gas: cuprous, 2, 6 - di-t-butyl _ 曱 age, 2, 2, _ methylene bis(1) methyl 6 butyl benzene age), 2, 2: methylene bis (4_ethyl _6 • Tert-butylbenzene^), nitrosophenylhydroxylamine aluminum salt and diphenylnitrosamine. Further, 'as a benzotrisole, for example, i 2 3 benzene, monoazole, 1-gas-12,3-benzotrimethylene, bis (N-amine, 2 1 1 1 ϋ - , ^基基)Aminohydrazinyl _ , '3-本开二唾, bis(Ν·2_ethylhexyl)aminomethylene] oxazole and bis(indol-2-hydroxyethyl)amino A 1 book opened two. Wait and wait. In addition, as a few benzotris, for example, 2,3-benzotriazole, 5-carboxyl. carboxy - its u, recorded I2,3 · open three saliva, N-(N,N- II.2_Hexahexyl)Aminomethylidene-based sylvestris, succinylcarboxyl-opened oxadiazole, N-(N, squad 2, hydroxymethyl-polymethylidene carboxy benzophenone Trisodium and N_ soil-based ethyl carboxybenzotriazole, etc., an __ethylhexyl) amine radical polymerization inhibitor, cage ^ c &,, θ open diazole and carboxybenzotriazole The addition of human juice I is preferably 0.01~3 quality Jinci / s page 5 of the clock god; 'Better is 0.05 to 1 mass 〇 /. It is preferable that the amount is 0.01% by mass or more, and it is preferable that the amount is 3% by mass or less. From the viewpoint of i-sensitivity, the photosensitive resin composition of the present invention may also contain plasticizing 133895.doc •26-200921275 as needed. As such an additive, for example, polyalcohol, polyoxypropylene polyoxyethylene, polyoxyethylene monoterpene, polyoxypropylene:: methyl bond, polyoxyethylene oxypropylene monomethyl ether, polyoxyethylene B Diluted single sulphur, = propylene single-six scale, polyoxyethylene polyoxypropylene single-single singer and other diols screaming: phthalic acid, such as diethyl phthalate, phthalic acid, toluene : Γ 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒 棒The amount of the additive such as a plasticizer contained in the photosensitive resin composition is preferably from 5 to 50% by mass, more preferably from 5 to 3% by mass. From the viewpoint of suppressing the L time of the development time to the softness of the cured film, it is preferable that the mass % or more is further less than the mass% or less from the viewpoint of suppressing hardening or cold flow. The photosensitive resin laminate of the present invention comprising a photosensitive resin layer and a support for supporting the layer may also be required to form a protective layer on the side of the support with the photosensitive resin layer. As the support used herein, it is preferable to make the transparency of the light emitted from the exposure light source transparent. Examples of such a support include, for example, a polyethylene terephthalate film, a polyglycol film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyvinylidene gas film, and a vinylidene chloride. Polymerized ruthenium, polymethyl methacrylate copolymer film, polystyrene film, polyacrylonitrile film, styrene copolymer film, polyamine film, cellulose derivative film. § 荨 荨 film can also be used as needed. It is preferred that the haze is 5 or less. The thickness of the thin film of the image forming property and advantageous in terms of economy 'must maintain strength, so this is preferred to use I33895.doc -27 · 200921275 1 0~30 μηι persons. Further, the important property of the protective layer used in the photosensitive resin laminate is that the adhesion between the support and the photosensitive resin layer is smaller than that of the photosensitive resin layer, and the adhesion between the protective layer and the photosensitive resin layer is sufficiently small. For example, a polyethylene crucible or a polypropylene film can be preferably used as the protective fork 3, and a film having a peeling property as shown in Japanese Laid-Open Patent Publication No. SHO 59-202457 can be used. The film thickness of the protective layer is preferably W μιη, and the thickness of the photosensitive resin layer in the photosensitive resin laminate of the present invention varies depending on the use, and is preferably 5 to 100 μM, more preferably 7~6〇(4), and the more the resolution is increased, the thicker the film strength is. The method of producing the photosensitive resin laminate of the present invention by sequentially laminating the support, the photosensitive resin layer and, if necessary, the protective layer can be carried out by a conventional method. For example, a photosensitive resin composition used in a photosensitive resin layer is mixed with a solvent in which these solvents are dissolved to prepare a solution of the same sentence, and the solution is first applied to the solution using a bar coater or a roll coater. The support is dried and a photosensitive resin layer containing a photosensitive resin composition is laminated on the support. Then, a protective resin layered body can be produced by laminating a protective layer on a photosensitive resin layer as needed. Examples of the solvent include ketones represented by methyl ethyl ketone (oxime) and alcohols represented by methanol, ethanol and isopropyl alcohol. It is preferred to add the above solvent to the photosensitive resin so that the solution viscosity of the photosensitive resin composition coated on the support is 500 to 4000 mPa at 25 C. 133. doc • 28· 200921275 Composition in. &lt;Photoresist Pattern Forming Method&gt; The light-contacting method using the photosensitive resin laminate of the present invention can be formed by a step including a lamination step, an exposure step, and a development step. The following shows an example of a specific method. As a substrate (substrate to be processed), a (4) laminated board is used for the purpose of manufacturing a printed circuit board, and a glass substrate is used for the purpose of producing a textured base material, for example, a t-ray display is mentioned. The base material for the panel or the surface electroplating display substrate, and the rough sealing cover (4) form the through-hole stone wafer and the ceramic substrate. The substrate for a plasma display refers to a method in which an electrode is formed on a glass, and a dielectric layer is applied to coat a glass paste for a partition wall, and a glass paste portion for the partition wall is subjected to sandblasting to form an isolation. The substrate of the wall. These substrates are embossed after the blasting step. First, the lamination step is carried out using a laminator. When the photosensitive resin laminate has a protective layer, after the protective layer is peeled off, the layer containing the photosensitive resin composition of the photosensitive resin laminate is heated and packed on the surface of the substrate by a laminator to form a photosensitive layer. Resin layer. In this case, the photosensitive resin layer may be formed only on one side of the surface of the substrate or on both sides. In this case, the heating temperature is usually 40 to 16 (rc. Further, by performing the heating press twice or more, the adhesion and the chemical resistance can be improved. In this case, a roller having two stages of interlocking can also be used. The segment laminator is pressed, and it can be pressed by a few passes through the roller. Then the exposure step is performed using an exposure machine. If necessary, the support is stripped 133895.doc -29- 200921275, using active light Exposure through the mask. The amount of exposure is determined by the illumination of the light source and the exposure time. It can also be measured using a light meter. In addition, the direct riding exposure method can also be used for the exposure step. The direct drawing exposure is performed on the substrate without using a mask. The direct edge image is used for exposure. As the light source, for example, a semiconductor laser or an ultra-high pressure mercury lamp having a wavelength of 35 〇 to 41 〇 nm can be used. The drawing pattern is controlled by a computer, and the exposure amount is obtained by the illumination of the light source and the movement of the substrate. The speed is determined. Then, the developing step is carried out using a developing device. When the photosensitive resin layer has a support after the exposure, it is removed as needed, and then it is used for water solubility. The developing solution develops and removes the unexposed portion to obtain a resist image. An aqueous solution of Na2C〇4K2C03 is used as an aqueous test solution. The aqueous solution is selected according to the characteristics of the photosensitive resin layer, and usually 〇: mass% is used. 2G~(4) is called an aqueous solution. In the experimental water night, a surfactant, an antifoaming agent, and a small amount of an organic solvent for promoting development may be mixed. The photoresist pattern may be obtained by using the steps described, and may be further carried out depending on the situation. Heating step of 1曰00 300 C. By performing this heating step, the chemical resistance can be further improved. Heating furnaces that produce hot air, infrared rays or far infrared rays are used. <Photoresist pattern formation using direct drawing exposure method In a method of applying a photosensitive resin composition to a support and drying the photosensitive resin composition, the photosensitive resin composition is coated with a photosensitive resin composition. The layer is then laminated on the (four) optical resin layer to form a photosensitive resin laminate 133895.doc • 30· 200921275. After the protective layer of the photosensitive resin laminate obtained by the step is peeled off, 'The layer of the photosensitive resin layer is heated by a laminator to be sandblasted (Sakamotodam A (registered trademark)# F220P) A copper foil laminate with a copper thickness of 35 μηι to obtain a copper foil laminate with a photosensitive resin layer attached thereto. Using a direct drawing exposure apparatus (manufactured by Via Mechanics Co., Ltd., DI exposure machine DE-1AH) ) 'With the h line (405 nm), the scanning speed of the laser scanning direction of 1 〇mw/cm2 or more is 2 cm/sec or more. More preferably, the illuminance is 15 mw/cm2 or more, and the scanning speed of the laser scanning direction is 3 cm / sec or more, and more preferably, the illuminance of the copper foil laminated board to which the photosensitive resin layer is attached is obtained under the condition that the illuminance is 25 mW/cm 2 or more and the scanning speed in the scanning direction of the laser is 4 cm / sec or more. The resin layer was exposed. The exposure can be improved by exposing at a speed of 10 mW/cm2 or more and a scanning speed of 2 (10)/sec or more in the scanning direction of the laser. Then, after the support was peeled off, an alkali developing machine (manufactured by Fuji Electric Co., Ltd., a dry film developing machine) was used and a mass of 30 ° C was sprayed at twice the minimum development time. /. It is called an aqueous solution (spraying magic: 〇22 Μρ^, and the unexposed photosensitive resin layer is dissolved and removed, and is washed with water (spray pressure: G.2 MPa) at the same time as the minimum development time, and dried to form light. &lt;Production Method of Conductor, Method of Manufacturing Printed Circuit Board&gt; The method of manufacturing a printed circuit board according to the present invention is after the above-described resist pattern forming method using a copper backed laminate or a flexible substrate as a substrate The following steps are carried out via 133895.doc 31 200921275. First, a wire is formed on the copper surface of a substrate which is known to be exposed by etching or plating, etc. &amp; u “See strong alkaline solution to strip the photoresist pattern from the soil plate to obtain the desired aqueous solution for printing (hereinafter also referred to as “peeling solution”) and =•S /± « ώ ” ) is not particularly limited.

通仏度2〜5質量%、溫度為4〇W 之水广液口。亦可於剥離液中添加少量之水溶性溶劑。 &lt; V線架之製造方法&gt; 本發明之導線架之劁# 士έ 4一 係於使用金屬板,例如銅' 銅合金、鐵系合金作為基板之上述之 之後,經由以下之步驟進行。 Μ / 、方法 1先=藉由顯影而露出之基板進行㈣而形成導線。 J ’以與上述之印刷電路板之製造方法相同之方法將光 阻圖案剝離,從而獲得所需之導線架。 &lt;半導體封裝之製造方法&gt; 本發明之半導體封裝之製造方法係於使用已形成作為 LSI之電路之晶圓作為基板的上述之光阻圖案之形成方法 之後,經由以下之步驟進行。 首先’於藉由顯影而露出之開口部實施利用銅或焊錫之 柱狀電鑛’從而形成導線。其後,以與上述之印刷電路板 之製造方法相同之方法將光阻圖案剝離,進而藉由蚀刻將 柱狀電鑛以外之部分之薄金屬層去除,從而獲得所需之 導體封裝。 133895.doc -32· 200921275 &gt; &lt;具有凹凸圖案之基材之製造方法 於使用本發明之感光性樹腊積層體作為乾膜 用脅砂工法對基材進行加工時,以與上述法=利 法層厂堅感光性樹月旨積層體,並實施曝光、顯影。=之方 由於所形成之井P日$而’經 战之光阻圖案上噴塗噴射材料,切 之贺砂處理步驟,用驗性剥離液將殘存於 :自基材上去除之剝離步驟,可於基材上加 b處理步驟中所使用之噴射材料可使用公知 例如可使用以Sio、Si〇2、A㈣、CaC〇”Zr〇、破 璃、不鏽鋼為材質之2〜1〇〇叫左右之微粒子。 明二下’利用實施例對本發明之實施形態之例加以詳細說 [實施例] 1.評價用樣品之製作 按以下之方式製作實施例i〜7及比較例i〜4中之感光 脂積層體。 了 &lt;感光性樹脂積層體之製作&gt; '準備表1所示之化合物’充分授拌表2所示之組成比例之 感光性樹脂組合物,加以混合,並使用棒式塗佈機將其均 勻地塗佈於作為支侍體之16 μηι厚之聚對苯二甲酸乙二酯 膜=表面上,於95。〇之乾燥機中乾燥3分鐘而形成感光 樹脂層。感光性樹脂層之厚度為3〇 μιη。 繼而,將作為保護層之22 μιη厚之聚乙烯臈貼合於感光 性樹脂層之未積層聚對苯二曱酸乙二酯膜之表面上,從而 133895.doc •33· 200921275 獲得感光性樹脂積層體。 再者,表2中之P-l、P-2、P-3之質量份為含有甲基乙基 酮之值。 &lt;基板整面&gt; 準備於噴壓0.20 MPa下經噴砂刷磨(日本研削砥粒(股)製 造,Sakurandam A(註冊商標)#F220P)者作為靈敏度、解析 度、蓋孔評價用基板。 &lt;層壓&gt; 一面剥離感光性樹脂積層體之聚乙烯膜,一面利用熱輥 層合機(旭化成(股)公司製造,AL-70),於輥溫度1 〇5°C下 將感光性樹脂積層體層壓於預熱至6〇之基板上,且將氣 壓设定為0.35 MPa、層壓速度設定為丨5 m/min。 &lt;曝光&gt; 於使用直接繪圖式曝光裝置(日立Via Mechanics(股)製 造,曝光機DE_1AH),並用h線(4〇5⑽)、以照度25 m W/cm進行曝光時,以於斯圖費(St〇uffer) 2 ^段階段式曝 光表(step tablet)中5段硬化之曝光量進行曝光。 &lt;顯影&gt; 將聚對苯二甲酸乙二酿膜剝離後,使用驗性顯影機(富 士機工製造,乾膜用顯影機)以特定時間噴射⑽^之丨質量 %之Na2C〇3水溶液(噴壓:〇22叫,並以最小顯影時間 之2倍之時間將感光性樹脂層之未曝光部分溶解去除,且 以與最小顯影時間相同之時間進行水洗(喷壓mb), 加以乾燥。此時,將未曝光部分之感光性樹脂層完全溶解 133895.doc -34- 200921275 所需要之最少時間作為最小顯影時間。 2·評價方法 為了評價曝光時之產量而評價曝光速度,另外,為了評 價良率而評價膜破裂。 (1) 曝光速度 使用直接繪圖式曝光裝置(日立Via Mechanics(股)製造, DI曝光機DE-1AH),根據以叫他)、照度25 之條件,於斯®費21段階段式曝光表巾以5段硬化即表二之 註1所定義之曝光量於雷射掃描方向上曝光3〇⑽所需要之 時間,按以下之方式對曝光速度劃分等級。 〇(良): 未滿7秒 x(不佳): 7秒以上 (2) 臈破裂率 將感光件樹脂積層體雙面層壓於1&gt;6 mmt厚之銅箔積層 板有直徑6 mm之開孔的基材上,以表2之註丨所定義之曝光 里曝光,以最小顯影時間之2倍之顯影時間進行顯影,並 進行水洗、乾燥。繼而測定孔破裂數,並根據下述數學式 计鼻出破裂率。 覆蓋膜破裂率(%)=[孔破裂數(個)/總孔數(個)]χ1〇〇 根據該覆蓋膜破裂率(%),按以下之方式劃分等級。 ◎(優):未滿1% 〇(良):1 %以上、未滿3 % X(不佳):3%以上 (3) 解析度 133895.doc •35- 200921275 利用曝光部與未曝光部之寬度為1:1之比率之線圖光罩 (line pattern mask)以表2之註1所定義之曝光量對層壓後經 過1 5分鐘之靈敏度、解析度評價用基板進行曝光。以最小 顯影時間之2倍之顯影時間進行顯影,並進行水洗、乾 燥。將正常地形成硬化光阻臈線之最小光罩線之寬度作為 解析度。 下表2表示實施例1〜7及比較例1〜5之結果。 [表1]A wide liquid mouth with a temperature of 2 to 5 mass% and a temperature of 4 〇W. A small amount of a water-soluble solvent may also be added to the stripping solution. &lt;Manufacturing Method of V-Line Frame&gt; The lead frame of the present invention is manufactured by using the following steps using a metal plate such as a copper-copper alloy or an iron-based alloy as the substrate. Μ / , Method 1 First = The substrate exposed by development is subjected to (4) to form a wire. The photoresist pattern is peeled off in the same manner as in the above-described method of manufacturing a printed circuit board, thereby obtaining a desired lead frame. &lt;Manufacturing Method of Semiconductor Package&gt; The method of manufacturing a semiconductor package of the present invention is carried out by the following steps after a method of forming the above-described photoresist pattern using a wafer on which a circuit as an LSI is formed as a substrate. First, a wire is formed by performing a columnar electric ore of copper or solder on the opening exposed by development. Thereafter, the photoresist pattern is peeled off in the same manner as in the above-described method of manufacturing a printed circuit board, and a thin metal layer other than the columnar electric ore is removed by etching to obtain a desired conductor package. 133895.doc -32· 200921275 &lt;&lt;Production method of substrate having concave-convex pattern When the substrate is processed by using the photosensitive resin layer body of the present invention as a dry film by a sand-proof method, The Lifa layer factory is firmly sensitive to the tree and is exposed and developed. = The side of the well formed by the P-day $ formed by the spraying of the spray material on the photoresist pattern, the process of cutting the sand, the use of the experimental stripping solution will be left in: the stripping step removed from the substrate, For the spray material used in the step of adding b to the substrate, it is known to use, for example, Sio, Si〇2, A(4), CaC〇"Zr〇, broken glass, stainless steel, and the like. Microparticles. The second embodiment of the present invention will be described in detail by way of examples. [Examples] 1. Preparation of samples for evaluation The photosensitive resins of Examples i to 7 and Comparative Examples i to 4 were produced in the following manner. &lt;Production of Photosensitive Resin Laminate&gt; 'Preparation of Compounds shown in Table 1' The photosensitive resin composition of the composition ratio shown in Table 2 was sufficiently mixed, mixed, and bar coating was used. The machine was uniformly applied to a 16 μη thick polyethylene terephthalate film as a support body, and dried in a dryer of 95 ° C for 3 minutes to form a photosensitive resin layer. The thickness of the layer is 3〇μιη. A 22 μm thick polyethylene crucible of the sheath is attached to the surface of the unstacked polyethylene terephthalate film of the photosensitive resin layer, thereby obtaining a photosensitive resin laminate. 133895.doc •33· 200921275 The mass parts of P1, P-2, and P-3 in Table 2 are values containing methyl ethyl ketone. &lt;substrate surface&gt; Prepared by sandblasting at a spray pressure of 0.20 MPa (Japanese ground 砥In the case of the granules, the Sakurandam A (registered trademark) #F220P is used as a substrate for sensitivity, resolution, and capping evaluation. &lt;Lamination&gt; The polyethylene film of the photosensitive resin laminate is peeled off while using a heat roller. Laminator (manufactured by Asahi Kasei Co., Ltd., AL-70), laminated photosensitive resin laminate on a substrate preheated to 6 于 at a roll temperature of 1 〇 5 ° C, and set the gas pressure to 0.35 MPa. The lamination speed is set to 丨5 m/min. &lt;Exposure&gt; Using a direct drawing exposure apparatus (manufactured by Hitachi Via Mechanics Co., Ltd., exposure machine DE_1AH), and using the h line (4〇5(10)), with illumination 25 When m W/cm is exposed, it is used for St〇uffer 2 ^ stage stage exposure meter (ste Exposure exposure of 5-stage hardening in p tablet) &lt;Development&gt; After peeling off the polyethylene terephthalate film, an exponential developing machine (manufactured by Fuji Machine Co., Ltd., dry film developing machine) was used for a specific time. Spraying (10)^% by mass of Na2C〇3 aqueous solution (spray pressure: 〇22, and the unexposed portion of the photosensitive resin layer is dissolved and removed at twice the minimum development time, and is the same as the minimum development time. The time is washed with water (spray mb) and dried. At this time, the minimum time required for the photosensitive resin layer of the unexposed portion to completely dissolve 133895.doc -34 - 200921275 was taken as the minimum development time. 2. Evaluation method The exposure speed was evaluated in order to evaluate the yield at the time of exposure, and the film crack was evaluated in order to evaluate the yield. (1) Exposure speed using a direct drawing exposure device (manufactured by Hitachi Via Mechanics Co., Ltd., DI exposure machine DE-1AH), according to the condition of calling him), illumination 25, the 21-stage staged exposure towel The exposure speed is classified in the following manner by the time required for exposure of the 5-stage hardening, that is, the exposure amount defined in Note 1 of Table 2, to 3 〇 (10) in the laser scanning direction. 〇 (good): less than 7 seconds x (poor): 7 seconds or more (2) 臈 breaking rate double-sided lamination of the photosensitive resin laminate to 1&gt;6 mmt thick copper foil laminate with a diameter of 6 mm On the substrate of the opening, the exposure was carried out in the exposure defined by the mark of Table 2, and development was carried out at twice the development time of the minimum development time, and washed with water and dried. Then, the number of hole breaks was measured, and the nose breakage rate was calculated according to the following mathematical formula. Film rupture rate (%) = [number of holes broken (number) / total number of holes (number)] χ 1 〇〇 According to the film breakage rate (%), the grade was classified as follows. ◎(Excellent): Less than 1% 〇(good): 1% or more, less than 3% X (poor): 3% or more (3) Resolution 133895.doc •35- 200921275 Using exposed and unexposed parts The line pattern mask having a width of 1:1 is exposed to the substrate for sensitivity evaluation and resolution evaluation after lamination for 15 minutes by the exposure amount defined in Note 1 of Table 2. The development was carried out at a development time twice the minimum development time, and washed with water and dried. The width of the minimum mask line that normally forms the hardened photoresist line is taken as the resolution. Table 2 below shows the results of Examples 1 to 7 and Comparative Examples 1 to 5. [Table 1]

P-1 __^1____ 具有甲基丙烯酸甲酯/甲基丙烯酸/苯乙烯(質量比為50/25/25)之 組成’酸當量為344、重量平均分子量為5〇,〇〇〇之共聚物的43質 量%(固體成分)甲基乙基酮溶液 P-2 具有曱基丙稀酸甲酯/曱基丙烯酸/丙烯酸丁酯(質量比為 50/25/25)之組成’酸當量為37〇、重量平均分子量為2〇〇,〇〇〇之 共聚物的30質量。/〇(固體成分)曱基乙基酮溶液 P-3P-1 __^1____ Composition with methyl methacrylate/methacrylic acid/styrene (mass ratio 50/25/25) 'acid equivalent 344, weight average molecular weight 5 〇, 〇〇〇 copolymer 43% by mass (solid content) methyl ethyl ketone solution P-2 having a composition of methyl mercapto acrylate/mercapto acrylate/butyl acrylate (mass ratio 50/25/25) 'acid equivalent is 37 〇, the weight average molecular weight is 2 〇〇, and the copolymer of 〇〇〇 is 30 mass. /〇(solid content) mercaptoethyl ketone solution P-3

M-2 M-3 M-4 M-5 具有甲基丙烯酸/苯乙烯/甲基丙烯酸苯酯(質量比為3〇/2〇/5〇)之試固=;乙忠Γ子量為55,_之共聚物_烯娜基}丙^^ 歸氧 y耳之氧乙烯之聚乙二醇之二曱基丙 133895.doc •36- 200921275 M-6 九乙二醇二丙烯酸酯 1-1 9-苯基吖啶 1-2 N-苯甘胺酸 D-l 鑽石綠 D-2 無色結晶紫 D-3 三溴甲苯基颯M-2 M-3 M-4 M-5 with methacrylic acid/styrene/phenyl methacrylate (mass ratio 3〇/2〇/5〇) test solid == B zhongzi zizi amount is 55 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 9-phenyl acridine 1-2 N-phenylglycine Dl diamond green D-2 colorless crystal violet D-3 tribromotolylhydrazine

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Sri % (傘¥1) 133895.doc -38- 200921275 [產業上之可利用性] 本發明可利用於印刷電路板之製造,ic晶片搭載用導線 架製&amp;以金屬遮罩製造為代表之金屬箔精密加工,以 為代表之封裝之製造,以⑽或雇為代表之 軟性基板之製造,丰 電極或電磁波遮罩為代表之平=造」以1το電極、定址 利用噴砂工法製 ,,&quot;貞不益之隔離壁之製造及 具有凹凸圖案之基材之方法中。 133895.doc -39-Sri% (umbrella ¥ 1) 133895.doc -38- 200921275 [Applicability on the Industry] The present invention can be used in the manufacture of a printed circuit board, ic wafer mounting a lead frame manufactured &amp; metal mask made as representative for Metal foil precision processing, in the manufacture of the package represented by (10) or the manufacture of a flexible substrate represented by the employee, the electrode or the electromagnetic wave mask is represented by the flat electrode, and the site is made by the sandblasting method, 1&quot; In the method of manufacturing a barrier wall and a substrate having a concave-convex pattern. 133895.doc -39-

Claims (1)

200921275 十、申請專利範園: 1. 一種感光性樹脂組合*,其含有:2Q肩質量%之⑷驗 浴性南分子’上述驗溶性高分子含有幾酸,其酸當量為 1〇0 600、重里平均分子量為5,000〜500,000 ; 5〜70質量 。/。之⑻乙歸性不飽和加成聚合性單體;及㈣㈠0質量% 之⑷光聚合起始劑,且該感光性樹脂組合物含有選自以 下述通式⑴所表示之化合物群中之至少—種化合物、選 自以下述通式(Π)所表示之化合物群中之至少一種化合 物及選自以下述通式(111)所表示之化合物群中之至少一 種化合物作為該(b)乙婦性不飽和加成聚合性單體,並含 有0.01〜30質量%之以下述通式(IV)所表示之定化合物 作為該(C)光聚合起始劑; [化1] 0 0-(A-〇)m1-(B-〇)m3-C-C=CH2 φ H3C-C-CH3 ⑴ ό 。 T o r2 (Ri及R2分別獨立為氫原子或甲基;Α&amp;Β表示碳數為2〜6 之伸烷基,該等可相同亦可不同,於該等不同之情形 時’含-(A-Ο)-及_(Β_0)_之重複單元之結構可以無規構 成,亦可以嵌段構成;ηι 1、m2、m3及m4為0以上之整 數,ml+m2及m3 + m4分別獨立為〇〜8之整數, 133895.doc 200921275 ml+m2+m3+m4為2〜8之整數); [化2] 0 r3 O—(C-0)m5-(D-0)m7 C~C=CH2 Φ H3C-C-CH3 (II) φ 0—&lt;0·0}⑽-(0·Ο)πΛ«·&quot;0Η2 (R3及R_4分別獨立為氫原子或甲基;C及d表示碳數為2〜6 之伸烧基’該等可相同亦可不同,於該等不同之情形 時,含-(C-O)-及-(D-Ο)-之重複單元之結構可以無規構 成’亦可以嵌段構成;m5、m6、m7及m8為0以上之敕 數’ m5+m6及m7+m8分別獨立為〇〜28之整數, m5+m6+m7+m8 為 10 〜28 之整數); [化3] 〇 R5 0—(E-0)m9—(FO)ml1-C—C=CH2 Φ200921275 X. Application for Patent Park: 1. A photosensitive resin combination*, which contains: 2Q shoulder mass% (4) Bath-type southern molecule 'The above-mentioned test-soluble polymer contains several acids, and its acid equivalent is 1〇0 600, The average molecular weight in the weight is 5,000~500,000; 5~70 mass. /. (8) a ethylenically unsaturated addition polymerizable monomer; and (d) (i) 0% by mass of (4) a photopolymerization initiator, and the photosensitive resin composition contains at least one selected from the group consisting of compounds represented by the following formula (1) The compound, at least one compound selected from the group consisting of the following general formula (Π), and at least one compound selected from the group consisting of the following general formula (111) as the (b) The unsaturated addition polymerizable monomer contains 0.01 to 30% by mass of the compound represented by the following formula (IV) as the (C) photopolymerization initiator; [Chemical Formula 1] 0 0-(A- 〇)m1-(B-〇)m3-CC=CH2 φ H3C-C-CH3 (1) ό . T o r2 (Ri and R2 are each independently a hydrogen atom or a methyl group; Α & Β represents an alkylene group having a carbon number of 2 to 6, which may be the same or different, and in these different cases 'including-( The structure of the repeating unit of A-Ο)- and _(Β_0)_ may be randomly or block-structured; ηι 1, m2, m3 and m4 are integers of 0 or more, and ml+m2 and m3 + m4 are independent For an integer of 〇8, 133895.doc 200921275 ml+m2+m3+m4 is an integer from 2 to 8); [Chemical 2] 0 r3 O—(C-0)m5-(D-0)m7 C~C =CH2 Φ H3C-C-CH3 (II) φ 0—&lt;0·0}(10)-(0·Ο)πΛ«·&quot;0Η2 (R3 and R_4 are each independently a hydrogen atom or a methyl group; C and d represent The stretching group having a carbon number of 2 to 6 may be the same or different. In such a different case, the structure of the repeating unit containing -(CO)- and -(D-Ο)- may be randomly formed. 'Also can be block structure; m5, m6, m7 and m8 are 0 or more of the number 'm5+m6 and m7+m8 are each independently an integer of 〇~28, m5+m6+m7+m8 is an integer of 10~28 ); [Chemical 3] 〇R5 0—(E-0)m9—(FO)ml1-C—C=CH2 Φ H3C-C-CH3 (ill) 0-'{E-0)mi〇^(F-〇)m12-C-c=CH2 (R5及IU分別獨立為氫原子或甲基;E及F表示碳數為2〜6 之伸烧基’該等可相同亦可不同,於該等不同之情形 時,含-(E-Ο)-及-(F-Ο)-之重複單元之結構可以無規構 133895.doc 200921275 成’亦可以嵌段構成;m9、mi〇、及ml2為〇以上之 整數,m9+ml0及mii+ml2分別獨立為〇〜5〇之整數, m9+ml0+mll+mi2 為 30 〜50 之整數); [化4] (式中,R7為氫、烷基、芳基、。比啶基、烷氧基或經取代 之烧基)。 2. 如請求項1之感光性樹脂組合物,其進而含有〇〇1〜3質量 〇/〇之(d) N_芳基胺基酸化合物及0.01〜30質量%之(e)鹵 素化合物。 3. —種感光性樹脂積層體,其包含:包含基材膜之支持體 及積層於及支持體上之包含如請求項丨或2之感光性樹脂 組合物之層。 4. -種光阻圖案形成方法,其包含以下步驟:準備如請求 項3之感光性樹脂積層體,於基板上積層該感光性樹脂 積層體之包含感光性樹脂組合物之層而形成感光性樹脂 層,對該感光性樹脂層進行曝光、顯影。 5. 如請求項4之光阻圖案形成方法’其中於上述曝光步驟 中’曝光方法為直接繪圖,且照度為1〇 mW/cm2以上、 雷射掃描方向之掃描速度為2 cm/秒以上。 6. -種具有凹凸圖案之基材之製造方法,其包含以下步 驟使用玻螭肋作為基板,利用如請求項4或5之方法於 I33895.doc 200921275 所獲得之基板 該基板上形成光阻圖案,利用噴砂工 進行加工,剝離光阻圖案。 :使用金屬 請求項4或5之方 法於該基板上形成光阻圖案,對所声彳β &gt; &quot;&quot;于之基板進行蝕刻 7. —種導體圖案之製造方法,其包含以下步 板或金屬被膜絕緣板作為基板,利用如 或電鍍 8, 一種印刷電路板之製造方法,其包含以 卜,驟·使用金 屬包覆絕緣板作為基板,利用如請求H3C-C-CH3 (ill) 0-'{E-0)mi〇^(F-〇)m12-Cc=CH2 (R5 and IU are each independently a hydrogen atom or a methyl group; E and F represent a carbon number of 2 The composition of the repeating unit containing -(E-Ο)- and -(F-Ο)- may be irregularly 133895. In these different cases, the structure of the repeating unit containing -(E-Ο)- and -(F-Ο)- may be irregularly 133895. Doc 200921275 成 ' can also be block structure; m9, mi〇, and ml2 are integers above 〇, m9+ml0 and mii+ml2 are respectively independent 〇~5〇 integer, m9+ml0+mll+mi2 is 30~ (Integer of 50); wherein R7 is hydrogen, alkyl, aryl, pyridyl, alkoxy or substituted alkyl. 2. The photosensitive resin composition of claim 1, which further comprises (d) an N-arylamino acid compound of 〇〇1 to 3 parts by mass, and 0.01 to 30% by mass of the (e) halogen compound. A photosensitive resin laminate comprising: a support comprising a substrate film; and a layer comprising the photosensitive resin composition of claim 2 or 2 laminated on the support. 4. A method for forming a photoresist pattern, comprising the steps of: preparing a photosensitive resin laminate according to claim 3, and laminating a layer of the photosensitive resin composition on the substrate to form a photosensitive layer The resin layer is exposed and developed to the photosensitive resin layer. 5. The method of forming a photoresist pattern of claim 4, wherein the exposure method is direct drawing, and the illuminance is 1 〇 mW/cm 2 or more, and the scanning speed in the laser scanning direction is 2 cm / sec or more. A method for producing a substrate having a concave-convex pattern, comprising the steps of using a glass rib as a substrate, and forming a photoresist pattern on the substrate obtained by the method of claim 3 or 5 on the substrate obtained in I33895.doc 200921275 , using a sandblaster for processing, stripping the photoresist pattern. Forming a photoresist pattern on the substrate by using the method of metal claim 4 or 5, and etching the substrate of the sound 彳β &gt;&quot;&quot; Or a metal film insulation board as a substrate, using, for example, or plating 8, a method of manufacturing a printed circuit board, comprising: using a metal-clad insulating board as a substrate, using 八項4或5之方法於該 基板上形成光阻圖案,對所獲得之基板進行蝕刻或電 鍍,剝離光阻圖案。 9. 10. -種導線架之製造方法,其包含以下步驟:使用金屬板 作為基板,㈣如請求項4或5之方法於該基板上形成光 阻圖案’對所獲得之基板進行㈣,_光阻圖案。 一種半導體封裝之製造方法’其包含以下步驟:使用已 形成作為LSI之電路之㈣作為基板,利用如請求_或 5之方法於肩基板上形成光阻圖案,對所獲得之基板進 行電鍍,剝離光阻圖案。 133895.doc 200921275 七、指定代表圖: (一) 本案指定代表圖為:(無) (二) 本代表圖之元件符號簡單說明: 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 0 Rt 〇-(A-O)m1-(B-O)m3-C-C=〇H2 Φ H3C-C-CH3 (I) Φ O—(AOk-(B-O^-C - C-CH?The method of VIII or 4 forms a photoresist pattern on the substrate, and the obtained substrate is etched or plated to strip the photoresist pattern. 9. 10. A method of manufacturing a lead frame comprising the steps of: using a metal plate as a substrate, and (4) forming a photoresist pattern on the substrate as in the method of claim 4 or 5 (4), _ Resistive pattern. A method of manufacturing a semiconductor package, comprising the steps of: forming a photoresist pattern on a shoulder substrate by using a method of forming a circuit as an LSI, using a method of forming a circuit as an LSI, and plating the obtained substrate. Resistive pattern. 133895.doc 200921275 seven, FIG designated representative: (a) :( no case designated representative graph) (ii) of the present symbol elements representative diagram of a brief description: eight, when the case if the formula, please reveal the best display characteristics invention Chemical formula: 0 Rt 〇-(AO)m1-(BO)m3-CC=〇H2 Φ H3C-C-CH3 (I) Φ O—(AOk-(BO^-C - C-CH? 133895.doc133895.doc
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