TW200920867A - Magnetron sputter cathode mechanism - Google Patents

Abstract

A magnetron sputter cathode mechanism is provided. The mechanism includes a backing plate, a sputter target, at least a magnetic material component, and at least a magnet. The backing plate has a first surface and a second surface opposed to the first surface. The first surface has at least a positioning recess. The sputter target has a bombarded surface and a non-bombarded surface opposed to the bombarded surface. The non-bombarded surface attaches the first surface of the backing plate and has at least a combining recess. The magnetic material component is disposed between the backing plate and the sputter target. The magnetic material component has a combining portion and a positioning portion. The combining portion is positioned into the combining recess of the sputter target and the positioning portion is accommodated in the positioning recess of the backing plate. The magnet is disposed on the second surface of the backing plate, and the magnetic material component is attracted by the magnet correspondingly so as to fix the sputter target on the backing plate.

Description

364PA 200920867 IX. INSTRUCTIONS: [Technical Field] The present invention relates to a sputtering apparatus, and more particularly to a bonding surface using a magnetically permeable part to combine a target and a backing plate and to increase the magnetic field close to the target Magnetron sputtering cathode mechanism. [Prior Art] In the field of the mechanical industry, the electronics industry, or the semiconductor industry, a film (a film) is formed on the surface of a material by various methods in order to impart a certain property to the material used. The mining method is one of the most popular methods at present. It can be applied to the surface treatment of decorations, tableware, knives, tools, molds, semiconductor components, etc., and refers to various metal materials, superhard alloys, Tauman materials and wafers. On the surface of the substrate, a process of growing a film of homogenous or heterogeneous material is obtained in order to obtain characteristics such as appearance, abrasion resistance, heat resistance and corrosion resistance. The Magnetron Sputter Apparatus is a device for implementing the sputtering process. It can be applied to the research fields of motors, machinery, electronics, optics, materials, etc. The basic principle of magnetron sputtering equipment is based on ion reduction. : The principle of radiation, when the positive ions accelerated by the electric field impinge on the surface of the dry material, the atoms and molecules of the target bombardment surface fly out of the target bombardment surface after exchanging kinetic energy with these high-energy positive ions. This phenomenon is called " Sputtering." The magnetron ageing equipment uses an electric field to generate electrons between the two electrodes. These accelerating electrons collide with the pre-charged inert gas (such as argon) in the coating chamber to positively charge them. These positively charged ions are subject to Magnetron cathode mechanism

The cathode of 64PA 200920867 attracts and hits the atom of the bombardment surface of the target. These atoms are subjected to the collision of positive ions to obtain the momentum transfer of the incident ions, causing the target to bombard the atom under the bombardment and shifting. The target is bombarded under the surface. The extrusion of the atom will produce the force of the vertical target bombardment surface and collide the bombardment surface atoms. These atoms (the (4) can also collide into a positive charge) and finally deposit on the substrate. A film is formed on the (anode). Adding a set of magnets in the magnetron sputtering device, the electromagnetic force generated by the electromagnetic effect between the magnetic field and the electric field will affect the movement of the electron. If the direction of the magnetic field is perpendicular to the direction of the electric field, the electron will be lengthened by the spiral motion. Therefore, the number of electrons and gas collisions will be paralyzed, and the probability of the inert gas colliding into positively charged ions is increased, thereby increasing the film deposition efficiency. In the conventional magnetron control cathode mechanism, usually the back plate bonding-mail mechanism or the clamp clamping mechanism fixes the target to the second back plate bonding mechanism, that is, the target is viscous. The material face θ plate is 'as for how the clamp clamping mechanism fixes the dry material on the back plate'. The drawings are explained below. ί 机机 ia~ib diagram 'its sub-riding magnetic control miscellaneous dry material 12, at least one jss: 7Z 1 and at least one fixture 15, and the 丨 丨 ^ x _ 尺 eight cubits dry material 12 clipped on the back On the board u, the bombardment surface of the target 12 is turned back to the back plate u, and the clamp 15 can be fixed to the back plate U or the cathode by screws: the magnet 14 is placed on the back of the plate 11 to provide a magnetic field. However, the above-mentioned conventional magnetically controlled slit cathode mechanism employs a back-plate adhesive cross-sectional view. As shown in the figure ia~ib, the magnetically controlled splash cathode mechanism includes a back plate 11

364PA 200920867 The mechanism or fixture clamping mechanism has the following disadvantages: When the L back plate bonding mechanism replaces the dry material, the back plate must be removed from the cathode, and then the other block (4) ^ the dry material of the cathode is installed. (d) and complicated. • The back plate of the material is used in 2. The backing plate bonding mechanism must be replaced frequently. The vacuum cavity or θ is reversed because of the fatigue of the installation, and the leak must be performed after each replacement of the backing plate; ^; Probability

3. The backing plate bonding mechanism must use the bonding target # first to remove the residual target from the backing plate ((10): process connection (B〇nding) in the empty backing plate p and then the new dry point to produce two! The plate structure must be prepared with more back plates, except that it is installed on the back plate that must be prepared for bonding the recording materials. For example, if the ceramic (four) mechanism towel is used, if the clamp material is the same as (4), the material is The process of the target) often increases the cost of the fixture and the difficulty of cleaning and maintenance in the future. 6. In the fixture clamping mechanism, if the fixture material is low-cut and easy to clean and maintain the metal or stainless steel metal material, it will be out of the way. Will > dyeable deposition film. Qiuyi 7· ^ cool in the clamping mechanism, because of the concern of the lost shell is bombarded with pollution = two thin, the cathode and magnetic field design must make the target bombarded areaώ Off-clamping/, so the bombardment area of the target is narrowed, thus reducing the coating rate and reducing the size of the base. - 8. In the cool-clamping mechanism, because the bombardment area of the target is narrowed,

J64PA 200920867 will therefore reduce dry material usage. 9. In the clamp clamping mechanism, the cooling device is generally fixed to the back plate or the cathode by screws, and the fixing screw is not easy to be evenly controlled. If the fixing screw is too tight, the target may be broken due to thermal expansion; too loose will cause The target is in poor contact with the backing plate, so the heat on the coffin cannot be conducted to the cooling backing plate. 10. In the backing plate bonding mechanism or the clamp clamping mechanism, the magnet is located below the backing plate. Therefore, the magnetic field distribution above the target is poor and the magnetic field is weak, and it is difficult to control the electrons to effectively impinge on the inert gas.

SUMMARY OF THE INVENTION The present invention is directed to a magnetron sputtering cathode mechanism that processes a dry material such that the end of the mating magnetically conductive component is fixed to the dry material. Processing the groove in the magnet region on the opposite magnetron cathode so that the magnetic conductive member is inserted into the groove on the moon plate and is adsorbed by the magnet, thereby allowing the target to be worn on the back plate. Therefore, the present invention The target of the magnetron sputtering sputtering cathode mechanism

The bonding mechanism is easy, the cost is low, and the design of the Clamp clamping mechanism is not required. It is not necessary to consider the possibility that the clamp is positively bombarded, so the design can increase the bombardment area of the dry material. In order to increase the rate of the money film and increase the target utilization rate, in addition, the guide between the target and the back plate = the part has increased the magnetic field close to the bombardment surface of the target, so the magnetic distribution and intensity can be changed. According to the present invention, a magnetron sputtering cathode mechanism is provided comprising a backing plate, a target, at least one magnetically conductive component, and at least one magnet. The backing plate has at least - positioning of the - face and m - face;

364PA 200920867 and the target has a relatively one bombardment surface and a non-bursting surface, the non-bombardment surface has at least one coupling groove, the magnetic conductive component is disposed between the back plate and the target material, and has a joint portion and a positioning portion. The joint portion is placed in the joint groove of the target, and the positioning portion is received in the positioning groove of the back plate, the magnet is disposed on the second surface of the back plate, and the magnetic conductive component is correspondingly adsorbed to the magnet for the target The non-bursting surface of the material is fixed to the first side of the backboard. In order to make the above description of the present invention more comprehensible, a preferred embodiment will be described below with reference to the accompanying drawings, and the following detailed description will be made as follows: [Embodiment] Referring to the first embodiment, please refer to the drawings 2A-2B at the same time. The top view and the transverse cross-sectional view of the magnetron sputtering cathode mechanism according to the first embodiment of the present invention are respectively shown. As shown in FIGS. 2A-2B, the magnetron sputtering cathode mechanism 20 can be disposed in a magnetron sputtering apparatus and includes a backing plate 21, a target 22, at least one magnetic conductive component 23, and at least one magnet. 24, the back plate 21 has a first surface 21a and a second surface 21b. The first surface 21a has at least one positioning groove 25, and the target 22 is formed as a bombardment surface 22a different from the surface of the back plate 21. The other surface is formed as a non-bombarding surface 22b, the non-bombarding surface 22b has at least one coupling groove 26, and the dry material 22 is any material that can be magnetized by a money mirror. As shown in FIG. 2B, the magnetic conductive component 23 is disposed between the back plate 21 and the target 22, and has a joint portion 23a and a positioning portion 23b. Referring to FIG. 2C, the back plate of FIG. 2A is illustrated. The bottom view, as shown in Fig. 2C, the positioning groove 25 of the back plate 21 is provided as a seal 10 around the edge of the first face 21a.

364PA 200920867 a closed-loop groove, and a long-shaped groove of a central portion, and a second annular surface 21b of the back plate 21 is provided with a closed annular magnet surrounding the edge of the second surface 21b, and the second surface 21b The central portion is a strip-shaped magnet, and the joint portion 23a and the positioning portion 23b of the magnetic conductive member 23 are respectively inserted into the coupling groove 26 of the target 22 and the positioning groove 25 of the back plate 21 for the target 22 to be positioned. The backing plate 21, and the magnet 24 magnetically adsorbs the magnetic conductive member 23, so that the target 22 is stably coupled to the backing plate 21 by the magnetic conductive member 23. Please also refer to Figures 2C and 2D, where Figure 2D is a cross-sectional view of the target of Figure 2B. The target 22 is a closed annular positioning groove 25 corresponding to the back plate 21, and a central elongated positioning groove 25, and the coupling groove 26 of the target 22 forms a closed annular structure and an elongated structure at the center. And the groove 26 is formed into a T shape in section, and a wide groove 26a is formed in the wide portion, and a narrow groove 26b is formed in the vertical position. In addition, the magnetic conductive component 23 may be a magnetic conductive material such as iron, cobalt, nickel or an alloy thereof or a magnet, and the magnetic conductive component 23 is not a T-shaped structure as shown in the figure, for the magnetic conductive component 23 A wide joint portion 23a is formed, and the other portion is formed as a narrow positioning portion 23b for the joint portion 23a to be sleeved on the wide groove 26a of the target 22, and the positioning portion 23b is inserted into the narrow recess of the back plate 21. The groove 25b is adsorbed to the magnet 24, and the back plate 21 and the target 22 are bonded to each other. As shown in FIG. 2B, since the magnetic conductive component 23 of the present embodiment is disposed between the backing plate 21 and the target 22, the bombardment surface 22a of the target 22 will not be occupied, so as shown in FIG. 2A, the target 22 The range of the bombardment region 22c is much larger than the bombardment region 12c of the conventional target 12 as shown in FIG. 1A, and therefore, 11

564PA 200920867 increases the coating rate of magnetron sputtering equipment and increases the size of the substrate to be plated on the anode in the magnetron sputtering equipment. However, the technique of the present invention is not limited thereto, and the positioning groove may also be designed as a plurality of independent grooves, for example, three, which are respectively located on the left and right sides and the central portion of the first surface of the back plate, and on the target. The coupling groove can also be correspondingly designed as three independent grooves, which are respectively located at the left and right sides and the central position of the non-bursting surface of the target, and correspond to the position of the positioning groove of the back plate. As for the longitudinal section design of the joint portion of the magnetic conductive component, in addition to the τ shape, it may be provided in a Y shape, or other shapes. Please refer to FIG. 3A, which illustrates the combination of the second magnetic conductive component and the target material. The joint portion 123a of the magnetic conductive member 123 is designed to be circular, and the joint groove 126 of the target 122 is also designed to be circular, so that the joint portion 123a can structurally interfere with the joint groove 126. Referring to FIG. 3B, a schematic diagram of the combination of the third magnetically conductive component and the target is shown. The joint portion 223a of the magnetic conductive component 223 is designed to be a dovetail shape, and the coupling groove 226 of the target 222 is also designed as a tail. The joint portion 223a can be structurally interfered with the coupling groove 226, but the technique of the present invention is not limited thereto, and the joint portion of the magnetic conductive component can also be designed as a semicircle, an egg shape, an ellipse, a fan shape, a regular polygon, The non-orthogonal polygon, any regular shape or irregular shape, and the shape of the coupling groove of the target 22 also corresponds to the shape design of the joint portion of the magnetic conductive part. As shown in FIG. 2B, the magnet 24 located on the peripheral region of the second surface 21b of the backing plate 21 has an N pole which can face the magnetic component 23 and a S pole which is opposite to the magnetic component 23 and which is located at the backing plate 21. Central region 12 of second face 21b

In the magnet 24 of the 64PA 200920867, the S pole is opposite to the surface of the magnetic component 23, and the N pole is opposite to the magnetic component 23, therefore, according to the positional arrangement of the magnet 24 and the polarity arrangement, a magnetic field is provided between the magnets 24. To increase the efficiency of sputtering. The magnetron sputtering cathode mechanism 20 of the present embodiment can also omit the magnetic conductive component 23 at the intermediate position and is opposite to the backing plate 21 before the target 22 can be fused to the backing plate 21 through the magnetic conductive component 23. The positioning groove 25 in the central region and the coupling groove 26 in the central portion of the target 22 may also be omitted. SECOND EMBODIMENT Please refer to Figs. 4A to 4C, which are respectively a plan view and a transverse cross-sectional view of a magnetron sputtering cathode mechanism according to a second embodiment of the present invention, and an exploded view of Fig. 4B. The magnetron sputtering cathode mechanism 30 of the present embodiment is different from the magnetron sputtering cathode mechanism 20 of the first embodiment (as shown in FIG. 2B) in the manner in which the target 32 and the magnetically permeable member 33 are joined. The constituent elements continue to use the reference numerals, and the connection relationship between them is not repeated. As shown in FIGS. 4B to 4C, the target 32 has a relatively one bombardment surface 32a and a non-bombaring surface 32b. The coupling recess of the non-bombarding surface 32b has, for example, a screw hole 36, and the target 32 is magnetron splashable. Any of the targets are plated, and the magnetic conductive component 33 is disposed between the back plate 21 and the target 32, and the magnetic conductive component 33 includes a magnetic positioning portion 33a and a bolt 33c. The positioning portion 33a is provided with a consistent hole 33b. And the through hole 33b can be passed through the bolt 33c to 13

64PA 200920867 is formed as a joint portion 33d of the bolt 33c passing through the positioning portion 33a, and the engaging portion 33d is engaged with the screw hole 36 of the target 32, and the positioning portion 33a is received in the positioning groove 25, and The positioning portion 33a of the magnetic conductive member 33 and the magnet 24 of the second surface 21b of the backing plate 21 are attracted to each other to position the target 32 on the first surface 21a of the backing plate 21. According to the content described in the above embodiments, the magnetron sputtering mirror cathode mechanism of the present invention can solve various problems faced by the conventional magnetron sputtering cathode mechanism. The advantages thereof are respectively described as follows: 1. The magnetic control splash of the present invention The plated cathode mechanism does not need to replace the back plate when replacing the target, so the installation work is more time-saving and simple. 2. Since the magnetron sputtering cathode mechanism of the present invention does not need to replace the back plate when replacing the target, the vacuum chamber of the magnetron sputtering device is not leaked due to the installation of the crucible, and the magnetron splashing is not necessary. Leakage testing of plating equipment. 3. Due to the magnetron sputtering cathode mechanism of the present invention, there is no need for a target backplane debonding and a backbond bonding process. 4. Since the magnetron sputtering cathode mechanism of the present invention does not need to have the back plate of the target detached and the back plate adheres, the magnetron sputtering cathode mechanism of the present invention does not need to be prepared on the back plate of the back plate bonding process, so Save on the cost of equipment. 5. The magnetron sputtering cathode mechanism of the present invention eliminates the need to clamp the dry material on the backing plate, thereby reducing the cost of fixture fabrication and maintenance. 6. The magnetron sputtering cathode mechanism of the present invention does not require the use of a jig to prevent the jig from being bombarded and contaminating the deposited film. 7. The magnetron sputtering cathode mechanism of the present invention does not require the use of a jig, and does not require 14

364PA 200920867 Considering that the fixture is bombarded to contaminate the deposited film, so the cathode and magnetic field settings can widen the bombardment area of the dry material, thereby increasing the film rate and increasing the size of the substrate to be plated. 8. The magnetron sputtering clock cathode mechanism of the present invention can widen the bombardment area of the dry material, so that the target utilization rate can be improved. 9. The magnetron control cathode mechanism of the present invention does not need to use a screw to cool the device's "° is a plate or a cathode, so there is no case where the combined screws are tight." On the one hand, the screw lock is not too tight. The target is thermally expanded and broken, and on the other hand, it is not too loose, so that the target and the backing plate are in poor contact, so that the heat on the dry material cannot be transmitted to the backing plate and cooled. Ίο. The magnet of the magnetron sputtering cathode mechanism of the present invention is also located below the backing plate, but the magnetically permeable part between the target and the backing plate has increased the magnetic field close to the bombardment surface of the target, so it can be improved The magnetic field distribution above the bombardment surface of the target increases the strength of the magnetic field to control the electrons to effectively impinge on the inert gas. The magnetron sputtering cathode mechanism disclosed in the above embodiments of the present invention, the design of the re-transmission I over-magnetic component to bond the coarse material to the back plate, and then the principle of magnetic adsorption is used to adsorb the dry material on the back plate. The dry material installation can avoid the problems that occur when the conventional magnetron (10) cathode mechanism uses the back plate minus (b. ton) or clamp (Clamp) clamping mechanism. At the same time, the magnetically conductive parts between the dry material and the $ plate have increased the magnetic field close to the bombardment surface of the dry material. Therefore, the distribution and strength of the magnetic field can be improved. The present invention has been described above with reference to the preferred embodiments, and is not intended to limit the invention. The hair of the technical field (4) belongs to the technical field.

64PA 200920867 The knowledge of the present invention can be varied and retouched without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

364PA 200920867 [Simplified Schematic] Figures 1A to 1B show a top view and a transverse cross-sectional view of a conventional magnetron sputtering cathode mechanism, respectively. 2A to 2B are a plan view and a transverse cross-sectional view, respectively, showing a magnetron sputtering cathode mechanism according to a first embodiment of the present invention. Figure 2C is a bottom plan view of the back panel of Figure 2A. Fig. 2D is a cross-sectional view showing the target of Fig. 2B. FIG. 3A is a schematic view showing the combination of the second magnetic conductive component and the target. (' Figure 3B shows a schematic view of the combination of the third magnetically permeable part and the target. The 4A to 4B are respectively a plan view and a transverse cross-sectional view of the magnetron-plated cathode mechanism according to the second embodiment of the present invention. Figure 4C shows the exploded view of Figure 4B. [Explanation of main components] 10, 20, 30: Magnetron sputtering cathode mechanism 11, 21: Backplane I 12, 22, 32, 122, 222: Target 12c, 22c, 32c: bombardment area 14, 24: magnet 15: clamp 21a: first surface 21b: second surface 22a, 32a: bombardment surface 22b, 32b: non-bombardment surface 17

64PA 200920867 23, 33, 123, 223: magnetic conductive parts 23a, 33d, 123a, 223a: joint portions 23b, 33a: positioning portion 25: positioning grooves 26, 126, 226: coupling groove 26a: wide groove 26b: Narrow groove 33b: through hole 〇 33c: bolt 36: screw hole 18

Claims (1)

200920867 64PA Patent Application Range: A magnetron sputtering cathode mechanism comprising: a backing plate having a first one and a second surface, the first surface having at least one positioning groove, having a relative bombardment a surface and a non-bombardment surface, the non-booming surface of the backing plate, and the surface of the back surface having at least 4 is disposed between the back plate and the dry material, and has a groove, a weir, a hybrid portion The combination of the recorded silk material is 4 positions.卩 置 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四The far-reaching magnetic parts are iron, australis, nickel or alloys thereof. 3. As claimed in the patent scope] wherein the magnetically permeable part is another magnet. The magnetically controlled anti-cathode cathode machine described in the first paragraph of the patent scope of the patent system of the above-mentioned patent range is the larger than the narrow 乍 = 槽 侔 侔 入 入 入 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如And the combination of the magnetic conductive portion;; =: the combined groove of the crucible, so that the squealing surface of the junction I is larger than the transverse section of the positioning portion. 5. For the scope of patent application No. 4 τ τ, the magnetron sputtering cathode machine tail-shaped knot f τ word structure, Υ-shaped structure or structuring 19 !64PA 200920867 broadcast ^ as claimed in the first item In the magnetron sputtering cathode machine, the longitudinal section of the joint portion of the magnetic conductive part is circular, semi-circular, = elliptical, fan-shaped, regular polygon, non-normal polygon, arbitrary rule, 1H and (4) The combined groove corresponds to the shape of the joint. The magnetron-cathode mechanism described in the first aspect of the invention is a structure in which the magnetic component is a body-formed structure. The magnetic control money cathode machine described in the first item is: Qiu 匕 匕 contains a magnetic positioning portion and a bolt ' 螺 screw is provided with a through hole ' and the through hole is for the bolt Passing through, the end of the positioning portion is formed as a joint portion, and the screw portion is coupled to the pure material, and the positioning portion is accommodated in the positioning portion of the backing plate of the backing plate Adsorbing with the magnets of the back (four) two sides to position the target on the backing plate. The magnetically controlled splashing cathode machine closing ring I 所述 is provided with a closed annular (10) stone and the combined groove of the (4) relative to the positioning groove mechanism. Said crane plating cathode = shape - the combination of the groove relative to the positioning groove" 20