200926475 九、發明說明 【發明所屬之技術領域】 本發明係關於有機半導體發光裝置，尤其是，與將有 機薄膜電晶體及面發光型有機半導體發光元件集成化於同 一基板上之有機半導體發光裝置相關。 . 【先前技術】 Q 利用有機半導體之電路元件，例如，長期間安定地維 持有機半導體之特性，此外，對來自外部之各種應力及衝 撃等具有高耐久性，信賴性優良之電路元件（例如，參照 專利文獻1)。專利文獻1之電路元件，係在基板上形成含 有有機半導體之電路部之電路元件，其特徵爲具有以特定 空間包圍該電路部之密封罐。 例如，具有可抑制存在於大氣中之水蒸氣所導致之特 ' 性變化或劣化之構造的場效電晶體（例如，參照專利文獻 Ο 2)。專利文獻2所示之場效電晶體，具備：形成於基體上 之閘極電極；形成於閘極電極上之閘極絕緣膜；形成於閘 極絕緣膜上之源極/汲極電極；以及由形成於源極/汲極電 極間之閘極絕緣膜上之有機半導體材料層所構成之通道形 成區。至少於通道形成區之上形成保護層，該保護層具有 至少具有具吸濕性之層、及具耐濕性之層的層狀構造。 另一方面，鉬氧化膜（氧化钽：Ta205)膜，因爲其高 介電常數（整體之相對介電常數爲25)之電氣特性，被當做 電晶體之閘極絕緣膜使用時，可以大幅降低閘極驅動電壓 -4- 200926475 ，然而，因爲Ta205膜本身之內部缺陷及結合性所造成的 遲滞特性，無法當做安定之閘極絕緣膜來使用，而難以實 現高性能之電晶體。此外，將鉅氧化膜當做有機薄膜電晶 體之閘極絕緣膜來使用時，表面改質非常困難，有機半導 體材料之定向控制亦不佳，而難以提高有機薄膜電晶體之 特性（低電壓驅動、高驅動電流）。 . 此外，將金（Au)電極當做有機薄膜電晶體之源極/汲 @ 極電極使用時，因爲其相對較大之工作函數，對有機半導 體層之電洞注入較爲容易，然而，對於工作函數較大之有 機半導體層，未必能實現充份之電洞注入量。此外，尤其 是，底部接觸型之有機薄膜電晶體時，有機半導體層/無 機電極界面之接觸電阻較大。 另一方面，面發光型有機薄膜電晶體，係由有機發光 二極體（OLED: Organic Light Emitting Diode)或有機電致 ' 發光（OEL : Organic Electroluminescence)等之有機半導體 〇 發光元件、及開關切換元件之有機薄膜電晶體（OTFT : Organic Thin Film Transistor)所構成，可以整體形成（連 續成膜），而可形成高數値孔徑且高精細之顯示裝置。 藉由提高OTFT之移動度來降低OTFT之接通電阻，增 大開態電流，增加電流驅動能力，而且，藉由組合有機半 導體發光元件，實現高亮度發光。 專利文獻1:日本特開2005-277065號公報 專利文獻2:日本特開2005- 1 9 1 077號公報 200926475 【發明內容】 , 然而，有機薄膜電晶體之高移動度化，一般會引起有 機薄膜電晶體層之晶化乃至粒度生長，進而發生弓背而導 致有機發光二極體層之平坦性受損，而有發光特性及良率 降低的課題。 本發明之目的在提供一種有機半導體發光裝置，係將 ， 有機薄膜電晶體及面發光型有機半導體發光元件集成化於 0 同一基板上之有機半導體發光裝置，提高從源極/汲極電 極之電洞注入能力，將高介電常數之絕緣膜當做有機薄膜 電晶體之閘極絕緣膜使用，表面改質容易，有機半導體材 料之定向控制亦良好，可提高有機薄膜電晶體之特性（低 電壓驅動、高驅動電流），而且，保持有機薄膜電晶體及 面發光型有機半導體發光元件之平坦性，適合提高發光特 ' 性及良率之集成化。 所以，藉由使層積於有機薄膜電晶體層之面發光型有 Q 機半導體發光元件層或發光層之多層化，確保構成全體有 機半導體發光裝置之層狀構造的平坦性。 爲了達成上述目的，依據本發明之一實施形態，係提 供一種有機半導體發光裝置，其特徵爲具備：基板、配置 於前述基板上之閘極電極、配置於前述閘極電極上之閘極 絕緣膜、配置於前述閘極絕緣膜上之源極電極及汲極電極 、配置於前述源極電極與前述汲極電極間之前述閘極絕緣 膜上之有機半導體層、配置於前述有機半導體層上之第1 電洞傳輸層、配置於前述第1電洞傳輸層上之第1發光層、 -6 - 200926475 配置於前述第1發光層上之第1電子傳輸層、配置於前述第 1電子傳輸層上之第2電洞傳輸層、配置於前述第2電洞傳 輸層上之第2發光層、配置於前述第2發光層上之第2電子 傳輸層、以及配置於前述第2電子傳輸層上之導電體層的 有機薄膜電晶體，且於前述有機薄膜電晶體之週邊部，更 具備由：配置於前述基板上之陽極電極、配置於前述陽極 . 電極上之第4電洞傳輸層、配置於前述第4電洞傳輸層上之 U 第4發光層、配置於前述第4發光層上之第4電子傳輸層、 配置於前述第4電子傳輸層上之第5電洞傳輸層、配置於前 述第5電洞傳輸層上之第5發光層、配置於前述第5發光層 上之第5電子傳輸層、配置於前述第5電子傳輸層上之陰極 電極之層狀構造所構成之有機半導體發光元件。 依據本發明之其他實施形態，係提供一種有機半導體 ' 發光裝置，其特徵爲具備：基板、配置於前述基板上之閘 ' 極電極、配置於前述閘極電極上之閘極絕緣膜、配置於前 Q 述閘極絕緣膜上之第1金屬層、由配置於前述第1金屬層上 之第2金屬層之層狀構造所構成之源極電極及汲極電極、 配置於前述源極電極與前述汲極電極間之前述閘極絕緣膜 上之有機半導體層、配置於前述有機半導體層上之第1電 洞傳輸層、配置於前述第1電洞傳輸層上之第1發光層、配 置於前述第1發光層上之第1電子傳輸層 '配置於前述第1 電子傳輸層上之第2電洞傳輸層、配置於前述第2電洞傳輸 層上之第2發光層、配置於前述第2發光層上之第2電子傳 輸層、以及配置於前述第2電子傳輸層上之導電體層’且 200926475 更具備：前述第1金屬層之工作函數大於前述第2金屬層之 工作函數之有機薄膜電晶體；及由前述有機薄膜電晶體之 週邊部之配置於前述基板上之陽極電極、配置於前述陽極 電極上之第4電洞傳輸層、配置於前述第4電洞傳輸層上之 第4發光層、配置於前述第4發光層上之第4電子傳輸層、 配置於前述第4電子傳輸層上之第5電洞傳輸層、配置於前 . 述第5電洞傳輸層上之第5發光層、配置於前述第5發光層 φ 上之第5電子傳輸層、以及配置於前述第5電子傳輸層上之 陰極電極之層狀構造所構成之有機半導體發光元件。 依據本發明之其他實施形態，係提供一種有機半導體 發光裝置，其特徵爲具備：基板、配置於前述基板上之閘 極電極、配置於前述閘極電極上之第1閘極絕緣膜、配置 於前述第1閘極絕緣膜上之第2閘極絕緣膜、配置於前述第 ' 2閘極絕緣膜上之第1金屬層、由配置於前述第1金屬層上 - 之第2金屬層之層狀構造所構成之源極電極及汲極電極、 Q 配置於前述源極電極與前述汲極電極間之前述閘極絕緣膜 上之有機半導體層、配置於前述有機半導體層上之第1電 洞傳輸層、配置於前述第1電洞傳輸層上之第1發光層、配 置於前述第1發光層上之第1電子傳輸層、配置於前述第1 電子傳輸層上之第2電洞傳輸層、配置於前述第2電洞傳輸 層上之第2發光層、配置於前述第2發光層上之第2電子傳 輸層、配置於前述第2電子傳輸層上之導電體層’且更具 備：前述第1金屬層之工作函數大於前述第2金屬層之工作 函數之有機薄膜電晶體；及由前述有機薄膜電晶體之週邊 -8 - 200926475 部之配置於前述基板上之陽極電極、配置於前述陽極電極 上之第4電洞傳輸層、配置於前述第4電洞傳輸層上之第4 發光層、配置於前述第4發光層上之第4電子傳輸層、配置 於前述第4電子傳輸層上之第5電洞傳輸層、配置於前述第 5電洞傳輸層上之第5發光層、配置於前述第5發光層上之 第5電子傳輸層、配置於前述第5電子傳輸層上之陰極電極 , 之層狀構造所構成之有機半導體發光元件。 φ 係據本發明之其他實施形態，係提供一種有機半導體 發光裝置，其特徵爲具備：基板、配置於前述基板上之閘 極電極、配置於前述閘極電極上之第1閘極絕緣膜、配置 於前述第1閘極絕緣膜上之第2閘極絕緣膜、配置於前述第 2閘極絕緣膜上之第1金屬層、配置於前述第1金屬層上之 第2金屬層、由配置於前述第2金屬層上之第3金屬層之層 ' 狀構造所構成之源極電極及汲極電極、配置於前述源極電 • 極與前述汲極電極間之前述第2閘極絕緣膜上之有機半導 Q 體層、配置於前述有機半導體層上之第1電洞傳輸層、配 置於前述第1電洞傳輸層上之第1發光層、配置於前述第1 發光層上之第1電子傳輸層、配置於前述第1電子傳輸層上 之第2電洞傳輸層、配置於前述第2電洞傳輸層上之第2發 光層、配置於前述第2發光層上之第2電子傳輸層、以及配 置於前述第2電子傳輸層上之導電體層，且更具備：前述 第1金屬層及前述第3金屬層之工作函數大於前述第2金屬 層之工作函數之有機薄膜電晶體；及由前述有機薄膜電晶 體之週邊部之配置於前述基板上之陽極電極、配置於前述 -9 - 200926475 陽極電極上之第4電洞傳輸層、配置於前述第4電洞傳輸層 上之第4發光層、配置於前述第4發光層上之第4電子傳輸 層、配置於前述第4電子傳輸層上之第5電洞傳輸層、配置 於前述第5電洞傳輸層上之第5發光層、配置於前述第5發 光層上之第5電子傳輸層、配置於前述第5電子傳輸層上之 陰極電極之層狀構造所構成之有機半導體發光元件。 . 依據本發明之其他實施形態，係提供一種有機半導體 0 發光裝置，其特徵爲具備：基板 '配置於前述基板上之閘 極電極、配置於前述閘極電極上之第1閘極絕緣膜、配置 於前述第1閘極絕緣膜上之第2閘極絕緣膜、配置於前述第 2閘極絕緣膜上之有機半導體層、隔離配置於前述有機半 導體層上之第1金屬層、配置於前述第1金屬層上之第2金 屬層、由配置於前述第2金屬層上之第3金屬層之層狀構造 ' 所構成之源極電極及汲極電極、配置於前述有機半導體層 ' 上及前述源極電極及汲極電極上之第1電洞傳輸層、配置 Q 於前述第1電洞傳輸層上之第1發光層、配置於前述第1發 光層上之第1電子傳輸層、配置於前述第1電子傳輸層上之 第2電洞傳輸層、配置於前述第2電洞傳輸層上之第2發光 層、配置於前述第2發光層上之第2電子傳輸層、以及配置 於前述第2電子傳輸層上之導電體層’且更具備：前述第1 金屬層及前述第3金屬層之工作函數大於前述第2金屬層之 工作函數之有機薄膜電晶體；及由前述有機薄膜電晶體之 週邊部之配置於前述基板上之陽極電極、配置於前述陽極 電極上之第4電洞傳輸層、配置於前述第4電洞傳輸層上之 -10- 200926475 第4發光層、配置於前述第4發光層上之第4電子傳輸層、 配置於前述第4電子傳輸層上之第5電洞傳輸層、配置於前 述第5電洞傳輸層上之第5發光層、配置於前述第5發光層 上之第5電子傳輸層、以及配置於前述第5電子傳輸層上之 陰極電極之層狀構造所構成之有機半導體發光元件。 依據本發明之其他實施形態，提供一種有機半導體發 . 光裝置，係底部發射型、頂部發射型、或雙方發射型。 U 依據本發明之其他實施形態，提供一種有機半導體發 光裝置，其特徵爲：藉由對矽氧化膜之表面實施Ar逆濺鍍 、UV/03處理、Ar/02電漿處理、HMDS處理、或其組合來 實施表面修飾。 依據本發明之其他實施形態，提供一種有機半導體發 光裝置，其特徵爲：適用於有機發光裝置、平面顯示裝置 ' 、撓性電子元件、透明電子元件、及照明裝置之任一或其 組合。 Q 依據本發明，可提供一種有機半導體發光裝置，係將 有機薄膜電晶體及面發光型有機半導體發光元件集成化於 同一基板上之有機半導體發光裝置，提高從源極/汲極電 極之電洞注入能力，將高介電常數之絕緣膜做爲有機薄膜 電晶體之閘極絕緣膜使用，表面改質容易，有機半導體材 料之定向控制亦良好，可提高有機薄膜電晶體之特性（低 電壓驅動、高驅動電流）’而且，保持有機薄膜電晶體及 面發光型有機半導體發光元件之平坦性，適合提高發光特 性及良率之集成化。 -11 - 200926475 依據本發明之有機半導體發光裝置，可改善面發光型 有機半導體發光元件之亮度誤差、發光波長之誤差所導致 之亮點/色斑等之發光特性，抑制良率之降低，而且，因 爲面發光型有機半導體發光元件及有機薄膜電晶體可多層 化，而大幅提高發光效率。 【實施方式】 〇 其次，參照圖式，針對本發明之實施形態進行說明。 以下之圖式記載中，同一或類似之部分賦予同一或類似之 符號。但是，圖式係槪念之物，與現實之物有所不同。此 外，圖式彼此間，包含尺寸關係及比率不同之部分在內。 此外，以下所示之實施形態，係以具體化本發明之技 術思想爲目的之裝置及方法的例示，本發明之技術思想， 各構成部品之配置等並未受限於下述說明。本發明之技術 ' 思想，於申請專利範圍內，可進行各種變更。 ❹ [第1實施形態] 第1圖係本發明之第1實施形態之有機半導體發光裝置 ’係有機半導體發光元件集成化於底部接觸型之有機薄膜 電晶體之週邊部的槪念剖面構造圖。 因爲有機薄膜電晶體係以有機半導體發光元件之驅動 器用之電晶體來構成，爲了低電壓驅動及高亮度發光，必 須增大有機薄膜電晶體之開態電流。本發明之第1實施形 態之有機半導體發光裝置，藉由適用第1圖所示之有機薄 -12- 200926475 膜電晶體之構造，而實現高驅動電流。 本發明之第1實施形態之有機半導體發光裝置之構造 ，如第1圖所示，具備有機薄膜電晶體，該有機薄膜電晶 體具備：基板10及配置於基板10上之閘極電極120;配置 於閘極電極120上之閘極絕緣膜15 ;隔離配置於閘極絕緣 膜15上之源極電極16及汲極電極18;配置於源極電極16及 - 汲極電極18間之閘極絕緣膜15上之有機半導體層400 ;配 @ 置於有機半導體層40 0上之電洞傳輸層411;配置於電洞傳 輸層411上之發光層412;配置於發光層412上之電子傳輸 層413;配置於電子傳輸層413上之電洞傳輸層421;配置 於電洞傳輸層421上之發光層4422;配置於發光層422上之 電子傳輸層423 ;配置於電子傳輸層423上之電洞傳輸層 43 1;配置於電洞傳輸層431上之發光層432;配置於發光 層432上之電子傳輸層433及配置於電子傳輸層433上之導 ' 電體層60。 Q 此外，於有機薄膜電晶體之週邊部，具備由：配置於 基板10上之陽極電極30、配置於陽極電極30上之電洞傳輸 層311、配置於電洞傳輸層311上之發光層312、配置於發 光層312上之電子傳輸層313、配置於電子傳輸層313上之 電洞傳輸層321、配置於電洞傳輸層321上之發光層322、 配置於發光層322上之電子傳輸層323、配置於電子傳輸層 323上之電洞傳輸層331、配置於電洞傳輸層331上之發光 層332、配置於發光層332上之電子傳輸層333、以及配置 於電子傳輸層333上之陰極電極40之層狀構造所構成之有 -13- 200926475 機半導體發光元件。 亦可以於配載有機半導體發光元件之基板10的背面， 配置濾色器5 0。 金屬層16、18，係由金（Au)電極所形成，其膜厚，例 如，約20nm〜200nm程度，最好爲約80nm。 此外，閘極絕緣膜15亦可以钽氧化膜來構成。 ' 此外，具體而言，本發明之第1實施形態之有機半導 © 體發光裝置之構造，如第1圖所示，具備有機薄膜電晶體 ，前述有機薄膜電晶體具備：基板10;由配置於基板10上 之厚度爲約l〇〇nm之由Al-Nd層所構成的閘極電極120;由 配置於閘極電極120上之厚度爲約lOOnm之由鉬氧化膜 (PVD-Ta205)所構成之閘極絕緣膜15;由隔離配置於閘極 絕緣膜15上之厚度爲約8〇nm之金電極層所構成之源極電 極16及汲極電極18;由配置於源極電極16及汲極電極18間 ' 之閘極絕緣膜15上之例如後述之Pyl05(Me)所構成之厚度 〇 爲約50nm之p型有機半導體層400 ;配置於有機半導體層 400上之電洞傳輸層411;配置於電洞傳輸層411上之發光 層412;配置於發光層412上之電子傳輸層413;配置於電 子傳輸層413上之電洞傳輸層421;配置於電洞傳輸層421 上之發光層42 2;配置於發光層422上之電子傳輸層42 3; 配置於電子傳輸層423上之電洞傳輸層431;配置於電洞傳 輸層43 1上之發光層43 2;配置於發光層432上之電子傳輸 層43 3;以及配置於電子傳輸層43 3上之導電體層60。 此外，於有機薄膜電晶體之週邊部，更具備有機半導 -14 - 200926475 體發光元件，前述有機半導體發光元件係由：配置於基板 10上之例如由ITO所構成之陽極電極30;配置於陽極電極 30上之電洞傳輸層311;配置於電洞傳輸層311上之發光層 312;配置於發光層312上之電子傳輸層313;配置於電子 傳輸層313上之電洞傳輸層321;配置於電洞傳輸層32 1上 之發光層322;配置於發光層322上之電子傳輸層323;配 - 置於電子傳輸層323上之電洞傳輸層331 ;配置於電洞傳輸 φ 層331上之發光層332;配置於發光層332上之電子傳輸層 333;以及配置於電子傳輸層333上之例如由Al/LiF層積電 極所構成之陰極電極40;之層狀構造所構成。 此外，可同時形成電洞傳輸層3U及411，此外，亦可 同時形成電洞傳輸層321及42 1，此外，亦可同時形成電洞 傳輸層331及431。 此外，上述之有機半導體發光元件之層狀構造時，於 ' 陽極電極30與電洞傳輸層311之間，與有機薄膜電晶體之 Ο 層狀構造之有機半導體層400相同，亦可介在著有機半導 體層。 此外，可同時形成電子傳輸層313及413，此外，亦可 同時形成電子傳輸層323及423，此外，亦可同時形成電子 傳輸層3 3 3及43 3。 此外，可同時形成發光層312及412，此外，亦可同時 形成發光層322及422，此外，亦可同時形成發光層332及 432 ° 本發明之第1實施形態之有機半導體發光裝置之形成 -15- 200926475 工程之以形成有機半導體層400爲目的之前處理，也是對 由鉬氧化膜（PVD-Ta205)所構成之閘極絕緣膜15之表面， 執行以表面清淨化爲目的之以下之處理。亦即，在氣相環 境中，實施約60sec之Ar之逆濺鍍處理，其次，實施約2分 之UV/03處理，此外，以疏水化爲目的而實施約15分之 HMDS處理。此外，亦可實施Ar/02電漿處理。 - 此外，用以形成源極電極上6及汲極電極18之金（Au) φ 層，因爲其工作函數較大，對有機半導體層400之電洞注 入較爲容易。 此外，最終之構造，第1圖中省略了圖示，然而，亦 可以於導電體層60及陰極電極40上，藉由以低温生長所形 成之窒化膜及矽氧化膜、或鈍化膜來形成該等層狀構造。 或者，亦可以鈍化膜來形成無機膜及有機膜之層積膜。此 外，亦可具備以特定空間包圍之密封罐的封裝構造。 ' 此外，本發明之第1實施形態之有機半導體發光裝置 ❹ ，有機薄膜電晶體部分，P型有機半導體層400之 HOMO(Highest Occupied Molecular Orbital)之能階絕對値 應大於帽蓋用導電體層60之工作函數的絕對値。此處， HOMO之能階，係用以表示有機分子之基態。此外， LUMO(Lowest Unoccupied Molecular Orbital)之會巨階，係 用以表示有機分子之激發態。此處，LUMO位準係對應於 最低激發一重項位準（S〇。此外，電子及電洞被注入有機 物，形成自由基陰離子（M_)、自由基陽離子（M + )時之電洞 及電子之位準，相當於激子的結合能不存在之份，電子傳 -16- 200926475 導單位、電洞傳導單位位於HOMO位準、LUMO位準之外 側之位置。 以η型有機半導體層取代p型有機半導體層400時，η型 有機半導體層之LUMO之能階絕對値應小於導電體層之工 作函數絕對値。 電洞傳輸層411、42 1、431可以使用例如a -NPD。此 - 處，a -NPD係被稱爲4,4-雙N-(l-萘基-1-)[Ν-苯基-胺基]- 聯苯（4，4 -b i s [Ν - (1 - n aphthy 1 -1 -)N-p heny 1 ami η〇 ] · b iphe ny 1) o 電子傳輸層412、422、432可以由例如Alq3等所形成 。此處，Alq3係被稱爲鋁8-羥基喹啉酸（Aluminum8-hydroxyquinolinate)或、tri8-quinolinolato aluminum 之材 料。 導電體層60可以由例如Mg、Ag、Al、Ca、Li、Cs、 ' Ni、Ti等之金屬材料、由LiF/Al所構成之金屬層狀構造、 © ITO、IZO等之無機導電體材料、PEDOT等之有機導電體 材料所形成。 亦即，P型有機半導體層400與導電體層60之間，可以 藉由以電洞傳輸層411、421、431、發光層412、422、432 、及電子傳輸層413、423、433之層狀構造所構成之pn二 極體，來防止源極電極16與汲極電極18間之短路。亦即， 可以藉由上述pn二極體，防止載體之逆流，原理上’不會 介由導電體層60發生源極.汲極間之短路。 當做P型電晶體，而對源極•汲極間施加偏電壓時， -17- 200926475 導電體層60與汲極電極18間，因爲電場方向爲相當於pn接 合之逆向偏壓，不會介由導電體層6 0而於源極電極16與汲 極電極18間發生短路。 同樣地，對源極·汲極間施加偏電壓時，帽蓋用之導 電體層60與源極電極16間，因爲係相當於pn接合之順向偏 壓，帽蓋用之導電體層60，藉由從源極電極（基準電位）朝 pn接合之順向電壓下降（Vf)份之電位差而處於安定。此外 ❹ ，P型有機半導體層（電晶體活性層）400內部之電位，藉由 帽蓋用導電體層60之電磁屏蔽效果而安定化。 本發明之第1實施形態之有機半導體發光裝置之構造 時，各電極、各層係分別以濺鍍、蒸鍍、塗佈等來進行成 膜。 基板10係使用例如厚度爲約3μιη〜1mm程度之玻璃基 板、不鏽鋼基板、藍寶石基板、矽基板等之無機材料基板 • 、或聚醯亞胺（PI)、聚對苯二甲酸乙二酯（PET)、聚奈二 〇 甲酸乙二醇酯（PEN)、聚碳酸酯、聚醚碾（PES)等之有機材 料基板、或塑膠基板等。 閘極電極120，於上述例係以Al-Nd層爲例，然而，亦 可以其他如 Mg、Ag、Al、Au、Ca、Li、Ta、Ni、Ti等之 金屬、或例如ITO、IZO等之無機導電體材料、或例如 PEDOT等之有機導電體材料所形成。此處，PED〇T係 PEDOT : PSS，係被稱爲聚-(3,4-伸乙二氧基噻吩）：聚苯 乙烯擴酸（P〇ly-(3，4-ethylenedioxy-thiophene) ： poly-styrenesulfonate)之材料。 -18- 200926475 閘極絕緣膜15，於上述例係以Ta205層爲例，然而， 亦可以使用其他之例如相對介電常數高於Si3N4、A12 03、BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic semiconductor light-emitting device, and more particularly to an organic semiconductor light-emitting device in which an organic thin film transistor and a surface-emitting organic semiconductor light-emitting device are integrated on the same substrate. . [Prior Art] The circuit element of the organic semiconductor, for example, maintains the characteristics of the organic semiconductor in a stable manner for a long period of time, and has high durability and excellent reliability in various external stresses and punches (for example, Refer to Patent Document 1). The circuit component of Patent Document 1 is a circuit component in which a circuit portion including an organic semiconductor is formed on a substrate, and is characterized in that it has a sealed can surrounded by the circuit portion in a specific space. For example, a field effect transistor having a structure capable of suppressing a characteristic change or deterioration caused by water vapor present in the atmosphere (for example, refer to Patent Document 2). The field effect transistor shown in Patent Document 2 includes: a gate electrode formed on the substrate; a gate insulating film formed on the gate electrode; and a source/drain electrode formed on the gate insulating film; A channel formation region composed of a layer of an organic semiconductor material formed on a gate insulating film between the source/drain electrodes. A protective layer is formed at least over the channel formation region, the protective layer having a layered structure having at least a layer having hygroscopicity and a layer having moisture resistance. On the other hand, the molybdenum oxide film (yttrium oxide: Ta205) film can be greatly reduced because it is used as a gate insulating film of a transistor because of its electrical property of high dielectric constant (the relative dielectric constant of the whole is 25). The gate driving voltage is -4-200926475. However, the hysteresis characteristic caused by the internal defects and bonding of the Ta205 film itself cannot be used as a stable gate insulating film, and it is difficult to realize a high-performance transistor. In addition, when the giant oxide film is used as a gate insulating film of an organic thin film transistor, surface modification is very difficult, and orientation control of the organic semiconductor material is also poor, and it is difficult to improve the characteristics of the organic thin film transistor (low voltage driving, High drive current). In addition, when a gold (Au) electrode is used as a source/汲@ pole electrode of an organic thin film transistor, hole injection into the organic semiconductor layer is easier because of its relatively large work function, however, for work A larger organic semiconductor layer may not be able to achieve a sufficient amount of hole injection. Further, in particular, in the case of the bottom contact type organic thin film transistor, the contact resistance of the organic semiconductor layer/inorganic electrode interface is large. On the other hand, the surface-emitting organic thin film transistor is an organic semiconductor germanium light-emitting element such as an organic light-emitting diode (OLED) or an organic electroluminescence (OEL), and switching The organic thin film transistor (OTFT) of the device can be formed integrally (continuous film formation), and can form a display device having a high number of apertures and a high definition. By increasing the mobility of the OTFT, the on-resistance of the OTFT is lowered, the on-state current is increased, the current drive capability is increased, and high-intensity illumination is achieved by combining the organic semiconductor light-emitting elements. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. 2005-277065. Patent Document 2: Japanese Patent Laid-Open Publication No. Hei. No. 2005-119. The crystallization of the crystal layer or even the grain size growth causes the back of the crystal layer to be damaged, and the flatness of the organic light-emitting diode layer is impaired, and the light-emitting property and the yield are lowered. An object of the present invention is to provide an organic semiconductor light-emitting device in which an organic thin film transistor and a surface-emitting organic semiconductor light-emitting device are integrated on an organic semiconductor light-emitting device of the same substrate, thereby improving the electric power from the source/drain electrodes. The hole injection ability is to use the high dielectric constant insulating film as the gate insulating film of the organic thin film transistor, the surface modification is easy, the orientation control of the organic semiconductor material is also good, and the characteristics of the organic thin film transistor can be improved (low voltage driving) In addition, the flatness of the organic thin film transistor and the surface-emitting organic semiconductor light-emitting element is maintained, and it is suitable for improving the integration of the light-emitting characteristics and the yield. Therefore, the planarization of the surface-emitting type Q-based semiconductor light-emitting device layer or the light-emitting layer laminated on the organic thin film transistor layer ensures the flatness of the layered structure constituting the entire organic semiconductor light-emitting device. In order to achieve the above object, an organic semiconductor light-emitting device according to an embodiment of the present invention includes a substrate, a gate electrode disposed on the substrate, and a gate insulating film disposed on the gate electrode. a source electrode and a drain electrode disposed on the gate insulating film, and an organic semiconductor layer disposed on the gate insulating film between the source electrode and the drain electrode, and disposed on the organic semiconductor layer a first hole transport layer, a first light-emitting layer disposed on the first hole transport layer, and a first electron transport layer disposed on the first light-emitting layer, -6 - 200926475, and disposed on the first electron transport layer a second hole transport layer, a second light-emitting layer disposed on the second hole transport layer, a second electron transport layer disposed on the second light-emitting layer, and a second electron transport layer disposed on the second electron transport layer The organic thin film transistor of the conductor layer further includes an anode electrode disposed on the substrate and disposed on the anode electrode at a peripheral portion of the organic thin film transistor. a hole transport layer, a U fourth light-emitting layer disposed on the fourth hole transport layer, a fourth electron transport layer disposed on the fourth light-emitting layer, and a fifth electrode disposed on the fourth electron transport layer a hole transport layer, a fifth light-emitting layer disposed on the fifth hole transport layer, a fifth electron transport layer disposed on the fifth light-emitting layer, and a layer of a cathode electrode disposed on the fifth electron transport layer An organic semiconductor light-emitting element composed of a structure. According to another embodiment of the present invention, there is provided an organic semiconductor light-emitting device comprising: a substrate; a gate electrode disposed on the substrate; a gate insulating film disposed on the gate electrode; The first metal layer on the gate insulating film and the source electrode and the drain electrode formed of a layered structure of the second metal layer disposed on the first metal layer are disposed on the source electrode and An organic semiconductor layer on the gate insulating film between the drain electrodes, a first hole transport layer disposed on the organic semiconductor layer, and a first light-emitting layer disposed on the first hole transport layer, and disposed on a first hole transport layer disposed on the first electron transport layer on the first electron transport layer, and a second light-emitting layer disposed on the second hole transport layer, and disposed in the first a second electron transport layer on the light-emitting layer and a conductor layer disposed on the second electron transport layer, and 200926475 further comprising: a function function of the first metal layer is greater than a work function of the second metal layer a thin film transistor; and an anode electrode disposed on the substrate at a peripheral portion of the organic thin film transistor; a fourth hole transport layer disposed on the anode electrode; and a fourth hole transport layer disposed on the fourth hole transport layer a fourth light-emitting layer, a fourth electron transport layer disposed on the fourth light-emitting layer, a fifth hole transport layer disposed on the fourth electron transport layer, and a fifth hole transport layer disposed on the fifth hole transport layer An organic semiconductor light-emitting device comprising a light-emitting layer, a fifth electron-transporting layer disposed on the fifth light-emitting layer φ, and a layered structure of a cathode electrode disposed on the fifth electron-transporting layer. According to another embodiment of the present invention, there is provided an organic semiconductor light-emitting device comprising: a substrate; a gate electrode disposed on the substrate; and a first gate insulating film disposed on the gate electrode; a second gate insulating film on the first gate insulating film, a first metal layer disposed on the second gate insulating film, and a second metal layer disposed on the first metal layer a source electrode and a drain electrode formed of a structure, an organic semiconductor layer disposed on the gate insulating film between the source electrode and the drain electrode, and a first hole disposed on the organic semiconductor layer a transport layer, a first light-emitting layer disposed on the first hole transport layer, a first electron transport layer disposed on the first light-emitting layer, and a second hole transport layer disposed on the first electron transport layer a second light-emitting layer disposed on the second hole transport layer, a second electron transport layer disposed on the second light-emitting layer, and a conductor layer disposed on the second electron transport layer, and further comprising: The work of the first metal layer An organic thin film transistor having a function larger than a working function of the second metal layer; and an anode electrode disposed on the substrate from the periphery of the organic thin film transistor -8 - 200926475, and a fourth electrode disposed on the anode electrode a hole transport layer, a fourth light-emitting layer disposed on the fourth hole transport layer, a fourth electron transport layer disposed on the fourth light-emitting layer, and a fifth hole transported on the fourth electron transport layer a layered structure of a fifth light-emitting layer disposed on the fifth hole transport layer, a fifth electron transport layer disposed on the fifth light-emitting layer, and a cathode electrode disposed on the fifth electron transport layer The organic semiconductor light-emitting element is constructed. According to another embodiment of the present invention, there is provided an organic semiconductor light-emitting device comprising: a substrate; a gate electrode disposed on the substrate; and a first gate insulating film disposed on the gate electrode; a second gate insulating film disposed on the first gate insulating film, a first metal layer disposed on the second gate insulating film, and a second metal layer disposed on the first metal layer a source electrode and a drain electrode formed of a layered structure of a third metal layer on the second metal layer, and the second gate insulating film disposed between the source electrode and the drain electrode a first organic semiconductor layer, a first hole transport layer disposed on the organic semiconductor layer, a first light-emitting layer disposed on the first hole transport layer, and a first light-emitting layer disposed on the first light-emitting layer An electron transport layer, a second hole transport layer disposed on the first electron transport layer, a second light-emitting layer disposed on the second hole transport layer, and a second electron transport layer disposed on the second light-emitting layer Layer and configuration in the aforementioned second electron transmission a conductor layer on the layer, further comprising: an organic thin film transistor having a work function of the first metal layer and the third metal layer greater than a work function of the second metal layer; and a peripheral portion of the organic thin film transistor An anode electrode disposed on the substrate, a fourth hole transport layer disposed on the -9 - 200926475 anode electrode, a fourth light-emitting layer disposed on the fourth hole transport layer, and a fourth light-emitting layer a fourth electron transport layer, a fifth hole transport layer disposed on the fourth electron transport layer, a fifth light-emitting layer disposed on the fifth hole transport layer, and a fifth light-emitting layer disposed on the fifth light-emitting layer An organic semiconductor light-emitting device comprising a fifth electron transport layer and a layered structure of a cathode electrode disposed on the fifth electron transport layer. According to another embodiment of the present invention, there is provided an organic semiconductor 0 light-emitting device comprising: a substrate 'a gate electrode disposed on the substrate; a first gate insulating film disposed on the gate electrode; a second gate insulating film disposed on the first gate insulating film, an organic semiconductor layer disposed on the second gate insulating film, and a first metal layer disposed on the organic semiconductor layer and disposed on the first metal layer a source electrode and a drain electrode formed of a second metal layer on the first metal layer and a layered structure of the third metal layer disposed on the second metal layer, and disposed on the organic semiconductor layer a first hole transport layer on the source electrode and the drain electrode, a first light-emitting layer in which Q is disposed on the first hole transport layer, and a first electron transport layer disposed on the first light-emitting layer a second hole transport layer on the first electron transport layer, a second light-emitting layer disposed on the second hole transport layer, a second electron transport layer disposed on the second light-emitting layer, and a second electron transport layer The aforementioned second electron transport layer Further, the upper conductor layer ′ further includes: an organic thin film transistor in which a work function of the first metal layer and the third metal layer is larger than a work function of the second metal layer; and a configuration of a peripheral portion of the organic thin film transistor An anode electrode on the substrate, a fourth hole transport layer disposed on the anode electrode, and a-10-200926475 fourth light-emitting layer disposed on the fourth hole transport layer, and disposed on the fourth light-emitting layer a fourth electron transport layer, a fifth hole transport layer disposed on the fourth electron transport layer, a fifth light-emitting layer disposed on the fifth hole transport layer, and a fifth light-emitting layer disposed on the fifth light-emitting layer An organic semiconductor light-emitting device comprising a layer structure of a 5 electron transport layer and a cathode electrode disposed on the fifth electron transport layer. According to another embodiment of the present invention, an organic semiconductor emitting device is provided, which is a bottom emission type, a top emission type, or a both-emitting type. According to another embodiment of the present invention, there is provided an organic semiconductor light-emitting device characterized by performing Ar reverse sputtering, UV/03 treatment, Ar/02 plasma treatment, HMDS treatment, or The combination is used to perform surface modification. According to another embodiment of the present invention, there is provided an organic semiconductor light-emitting device which is suitable for use in any one or a combination of an organic light-emitting device, a flat display device, a flexible electronic component, a transparent electronic component, and a lighting device. According to the present invention, there is provided an organic semiconductor light-emitting device which is an organic semiconductor light-emitting device in which an organic thin film transistor and a surface-emitting organic semiconductor light-emitting device are integrated on the same substrate, and a hole from the source/drain electrode is improved. Injecting ability, the high dielectric constant insulating film is used as the gate insulating film of the organic thin film transistor, the surface modification is easy, the orientation control of the organic semiconductor material is also good, and the characteristics of the organic thin film transistor can be improved (low voltage driving) And high drive current)', and maintaining the flatness of the organic thin film transistor and the surface-emitting organic semiconductor light-emitting element, it is suitable for improving the integration of light-emitting characteristics and yield. -11 - 200926475 The organic semiconductor light-emitting device of the present invention can improve the light-emitting characteristics such as brightness and color unevenness caused by the luminance error of the surface-emitting organic semiconductor light-emitting device and the error of the light-emitting wavelength, and suppress the decrease in the yield. Since the surface-emitting organic semiconductor light-emitting element and the organic thin film transistor can be multilayered, the light-emitting efficiency is greatly improved. [Embodiment] Next, an embodiment of the present invention will be described with reference to the drawings. In the following description, the same or similar parts are given the same or similar symbols. However, the schema is a mourning thing, which is different from the reality. In addition, the schemas contain different dimensions and ratios. In addition, the embodiments shown below are exemplified by the apparatus and method for embodying the technical idea of the present invention, and the technical idea of the present invention, the arrangement of components and the like are not limited to the following description. The technology of the present invention is subject to various modifications within the scope of the patent application. [First Embodiment] Fig. 1 is an organic semiconductor light-emitting device according to a first embodiment of the present invention. The organic semiconductor light-emitting device is integrated into a peripheral structure of a bottom contact type organic thin film transistor. Since the organic thin film electro-crystal system is constituted by a transistor for a driver of an organic semiconductor light-emitting element, it is necessary to increase the on-state current of the organic thin film transistor for low-voltage driving and high-brightness light emission. In the organic semiconductor light-emitting device according to the first embodiment of the present invention, a high drive current is realized by applying the structure of the organic thin -12-200926475 film transistor shown in Fig. 1. As shown in FIG. 1, the structure of the organic semiconductor light-emitting device according to the first embodiment of the present invention includes an organic thin film transistor including a substrate 10 and a gate electrode 120 disposed on the substrate 10; a gate insulating film 15 on the gate electrode 120; a source electrode 16 and a drain electrode 18 disposed on the gate insulating film 15; and a gate insulating layer disposed between the source electrode 16 and the drain electrode 18. An organic semiconductor layer 400 on the film 15; a hole transport layer 411 disposed on the organic semiconductor layer 40 0; a light-emitting layer 412 disposed on the hole transport layer 411; and an electron transport layer 413 disposed on the light-emitting layer 412 a hole transport layer 421 disposed on the electron transport layer 413; a light-emitting layer 4422 disposed on the hole transport layer 421; an electron transport layer 423 disposed on the light-emitting layer 422; and a hole disposed on the electron transport layer 423 The transmission layer 43 1; the light-emitting layer 432 disposed on the hole transport layer 431; the electron transport layer 433 disposed on the light-emitting layer 432; and the conductive layer 60 disposed on the electron transport layer 433. Further, the peripheral portion of the organic thin film transistor includes an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light-emitting layer 312 disposed on the hole transport layer 311. The electron transport layer 313 disposed on the light-emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, the light-emitting layer 322 disposed on the hole transport layer 321, and the electron transport layer disposed on the light-emitting layer 322 323. The hole transport layer 331 disposed on the electron transport layer 323, the light emitting layer 332 disposed on the hole transport layer 331, the electron transport layer 333 disposed on the light emitting layer 332, and the electron transport layer 333 disposed on the electron transport layer 333. The layered structure of the cathode electrode 40 is composed of a semiconductor light-emitting element of -13-200926475. The color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light-emitting device is mounted. The metal layers 16, 18 are formed of a gold (Au) electrode, and have a film thickness of, for example, about 20 nm to 200 nm, preferably about 80 nm. Further, the gate insulating film 15 may be formed of a tantalum oxide film. Specifically, the structure of the organic semiconductor light-emitting device according to the first embodiment of the present invention includes an organic thin film transistor as shown in Fig. 1, and the organic thin film transistor includes a substrate 10; a gate electrode 120 composed of an Al-Nd layer having a thickness of about 10 nm on the substrate 10; and a molybdenum oxide film (PVD-Ta205) having a thickness of about 100 nm disposed on the gate electrode 120 a gate insulating film 15; a source electrode 16 and a drain electrode 18 which are formed by a gold electrode layer having a thickness of about 8 nm disposed on the gate insulating film 15; and are disposed on the source electrode 16 and A p-type organic semiconductor layer 400 having a thickness 〇 of about 50 nm formed of Pyl05 (Me), which will be described later, on the gate insulating film 15 between the drain electrodes 18, and a hole transport layer 411 disposed on the organic semiconductor layer 400. a light-emitting layer 412 disposed on the hole transport layer 411; an electron transport layer 413 disposed on the light-emitting layer 412; a hole transport layer 421 disposed on the electron transport layer 413; and a light-emitting layer disposed on the hole transport layer 421 a layer 42 2; an electron transport layer 42 3 disposed on the light emitting layer 422; disposed in the electron transport layer a hole transport layer 431 on 423; a light-emitting layer 43 2 disposed on the hole transport layer 43 1; an electron transport layer 43 3 disposed on the light-emitting layer 432; and a conductor layer 60 disposed on the electron transport layer 43 3 . Further, an organic semiconducting-14 - 200926475 bulk light emitting device is further provided in a peripheral portion of the organic thin film transistor, and the organic semiconductor light emitting device is an anode electrode 30 made of, for example, ITO disposed on the substrate 10; a hole transport layer 311 on the anode electrode 30; a light-emitting layer 312 disposed on the hole transport layer 311; an electron transport layer 313 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 32 1; an electron transport layer 323 disposed on the light-emitting layer 322; a hole transport layer 331 disposed on the electron transport layer 323; and a hole transport layer 331 disposed on the hole The upper light-emitting layer 332; the electron transport layer 333 disposed on the light-emitting layer 332; and the cathode electrode 40 disposed on the electron transport layer 333, for example, an Al/LiF laminated electrode; Further, the hole transport layers 3U and 411 can be formed at the same time, and the hole transport layers 321 and 42 1 can be simultaneously formed, and the hole transport layers 331 and 431 can be simultaneously formed. Further, in the layered structure of the above-described organic semiconductor light-emitting device, the organic electrode layer 400 having the layered structure of the organic thin film transistor is the same as the organic semiconductor layer 400 between the anode electrode 30 and the hole transport layer 311, and may be organically Semiconductor layer. Further, the electron transport layers 313 and 413 can be simultaneously formed, and the electron transport layers 323 and 423 can be simultaneously formed, and the electron transport layers 3 3 3 and 43 3 can be simultaneously formed. Further, the light-emitting layers 312 and 412 can be simultaneously formed, and the light-emitting layers 322 and 422 can be simultaneously formed, and the light-emitting layers 332 and 432 can be simultaneously formed. The organic semiconductor light-emitting device according to the first embodiment of the present invention can be formed - 15-200926475 The process of forming the organic semiconductor layer 400 for the purpose of the surface treatment is performed on the surface of the gate insulating film 15 made of a molybdenum oxide film (PVD-Ta205). Namely, in the gas phase environment, a reverse sputtering treatment of Ar for about 60 sec was carried out, and then, a UV/03 treatment of about 2 minutes was carried out, and an HMDS treatment of about 15 minutes was carried out for the purpose of hydrophobization. In addition, Ar 02 plasma treatment can also be carried out. Further, the gold (Au) φ layer for forming the source electrode 6 and the drain electrode 18 is easy to inject into the hole of the organic semiconductor layer 400 because of its large work function. Further, although the final structure is omitted in the first drawing, the conductive layer 60 and the cathode electrode 40 may be formed on the conductor layer 60 and the cathode electrode 40 by a vaporized film, a tantalum oxide film, or a passivation film formed by low-temperature growth. Equal layered structure. Alternatively, a film may be formed by passivation to form a laminated film of an inorganic film and an organic film. Further, it is also possible to have a package structure of a sealed can surrounded by a specific space. Further, in the organic semiconductor light-emitting device 第 according to the first embodiment of the present invention, the organic thin film transistor portion and the HOMO (Highest Occupied Molecular Orbital) of the P-type organic semiconductor layer 400 have an energy level absolute ratio greater than that of the cap conductor layer 60. The absolute 値 of the work function. Here, the energy level of HOMO is used to indicate the ground state of organic molecules. In addition, the LUMO (Lowest Unoccupied Molecular Orbital) has a large order, which is used to indicate the excited state of organic molecules. Here, the LUMO level corresponds to the lowest excitation-heavy level (S〇. In addition, electrons and holes are injected into the organic substance to form radicals (M_), free radical cations (M + ), holes and electrons. The level of the equivalent is equivalent to the exciton binding energy, the electron transfer-16-200926475 lead unit, the hole conduction unit is located at the HOMO level, the position outside the LUMO level. Replace the p with an n-type organic semiconductor layer In the case of the organic semiconductor layer 400, the absolute order of the LUMO of the n-type organic semiconductor layer should be smaller than the absolute value of the work function of the conductor layer. The hole transport layers 411, 42 1 and 431 can use, for example, a-NPD. The a-NPD system is called 4,4-bis N-(l-naphthyl-1-)[Ν-phenyl-amino]-biphenyl (4,4 -bis [Ν - (1 - n aphthy 1) -1 -) Np heny 1 ami η〇] · b iphe ny 1) o The electron transport layers 412, 422, 432 may be formed of, for example, Alq3 or the like. Here, Alq3 is called aluminum 8-hydroxyquinoline ( Aluminum8-hydroxyquinolinate) or material of tri8-quinolinolato aluminum. The conductor layer 60 may be made of, for example, Mg, Ag, Al, Ca, Li, Cs, 'Ni, A metal material such as Ti, a metal layer structure composed of LiF/Al, an inorganic conductor material such as ITO or IZO, or an organic conductor material such as PEDOT. That is, the P-type organic semiconductor layer 400 and the conductive material The bulk layers 60 can be prevented by the pn diodes formed by the layered structures of the hole transport layers 411, 421, 431, the light-emitting layers 412, 422, and 432 and the electron transport layers 413, 423, and 433. The short circuit between the source electrode 16 and the drain electrode 18. That is, the reverse flow of the carrier can be prevented by the pn diode, and in principle, a short circuit between the source and the drain is not caused by the conductor layer 60. When a P-type transistor is applied and a bias voltage is applied between the source and the drain, -17-200926475 between the conductor layer 60 and the drain electrode 18, because the direction of the electric field is equivalent to the reverse bias of the pn junction, it is not impeded The conductor layer 60 is short-circuited between the source electrode 16 and the drain electrode 18. Similarly, when a bias voltage is applied between the source and the drain, the contact between the conductor layer 60 for the cap and the source electrode 16 is Corresponding to the forward bias of the pn junction, the conductor layer 60 for the cap, The potential difference between the source electrode (reference potential) and the forward voltage drop (Vf) portion of the pn junction is stabilized. Further, the potential inside the P-type organic semiconductor layer (transistor active layer) 400 is covered by the cap. It is stabilized by the electromagnetic shielding effect of the conductor layer 60. In the structure of the organic semiconductor light-emitting device according to the first embodiment of the present invention, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like. For the substrate 10, for example, an inorganic material substrate such as a glass substrate having a thickness of about 3 μm to 1 mm, a stainless steel substrate, a sapphire substrate, or a ruthenium substrate, or poly(imine) (PI) or polyethylene terephthalate (PET) is used. ), an organic material substrate such as polyethylene naphthalate (PEN), polycarbonate, polyether (PES), or a plastic substrate. The gate electrode 120 is exemplified by the Al-Nd layer in the above example. However, other metals such as Mg, Ag, Al, Au, Ca, Li, Ta, Ni, Ti, or the like, or ITO, IZO, etc., may be used. The inorganic conductor material or an organic conductor material such as PEDOT or the like is formed. Here, PED〇T is PEDOT: PSS, which is called poly-(3,4-ethylenedioxythiophene): P〇ly-(3,4-ethylenedioxy-thiophene): Poly-styrenesulfonate). -18- 200926475 The gate insulating film 15 is exemplified by the Ta205 layer in the above example. However, other positive dielectric constants such as Si3N4 and A12 03 may be used.
Ti02等之矽氧化膜之無機絕緣體材料、或聚醯亞胺（pi)、 聚乙烯基苯酚（PVP)、聚乙烯醇（PVA)等之有機絕緣體材料 〇 源極電極1 6及汲極電極1 8，上述例係以金層爲例，然 - 而，亦可以使用其他之例如Pt、Ta等之高工作函數之金屬 0 、ΙΤΟ、1ΖΟ等之無機導電體材料、PEDOT :聚3,4-伸乙二 氧基噻吩：聚苯乙烯磺酸（PSS)、PVPTA2 : ΤΒΡΑΗ、Et-PTPDEK ： TBPAH等之有機導電體材料，亦可使用適合用 於對P型有機半導體層（電晶體活性層）4 00之載體注入的材 料。 P型有機半導體層（電晶體活性層）4〇0，例如，係由並 五苯、聚-3-己烷噻吩（P3HT)、銅酞青素（CuPc)等之有機 * 半導體材料所形成。並五苯，具有如後述之第6(c)圖所示 〇 之分子構造。聚-3-己烷噻吩（P3HT)，具有如後述之第7(d) 圖所示之分子構造。銅酞青素（CuPc)，具有如後述之第 6(d)圖所示之分子構造。 此外，P型有機半導體層（電晶體活性層）4〇〇 ’例如’ 亦可以a-Si、聚矽等之無機半導體材料等置換形成° (P型有機半導體材料） 第6圖係可適用於本發明之第1實施形態之有機半導體 發光裝置之P型有機半導體層（電晶體活性層）4〇〇的P型有 -19- 200926475 機半導體材料之分子構造例。 第6(a)圖係Pyi〇5(Me) : 1,6雙（2-(4-甲苯基）乙烯基）芘 之分子構造例。此處，省略分子構造之記載，然而，例如 ’同樣可適用之苯基系有機半導體材料有Py 105 : 1,6雙 (2-(4-聯苯基）乙烯基）芘、ST10: 4,4’雙（2-(4-辛基苯基） 乙烯基）聯苯、ST126: 4,4，雙（2-(4-辛基苯基）乙烯基）p-- 聯三苯基、ST128: 1，6雙（2-(4-己基苯基）乙烯基）聯苯、 〇 8了94:1，4雙（2-(4-(4-丁基苯基）苯基）乙烯基）苯、81'124: 4,4’雙（2-(5-辛基噻吩-2-基）乙烯基）聯苯等。An inorganic insulator material of a tantalum oxide film such as Ti02, or an organic insulator material such as polyimine (pi), polyvinylphenol (PVP) or polyvinyl alcohol (PVA), source electrode 16 and drain electrode 1 8. The above example uses a gold layer as an example. However, other inorganic conductive materials such as metal 0, ΙΤΟ, and 1 P of a high work function such as Pt, Ta, etc., PEDOT: poly 3,4- can also be used. Ethylene dioxythiophene: polystyrene sulfonic acid (PSS), PVPTA2: ΤΒΡΑΗ, Et-PTPDEK: TBPAH and other organic conductor materials, can also be used for the P-type organic semiconductor layer (transistor active layer) 4 00 carrier injected material. The P-type organic semiconductor layer (electrolyte active layer) 4〇0 is formed, for example, of an organic* semiconductor material such as pentacene, poly-3-hexanethiophene (P3HT) or copper anthraquinone (CuPc). The pentacene has a molecular structure as shown in Fig. 6(c) which will be described later. Poly-3-hexanethiophene (P3HT) has a molecular structure as shown in Fig. 7(d) which will be described later. Copper anthraquinone (CuPc) has a molecular structure as shown in Fig. 6(d) which will be described later. Further, the P-type organic semiconductor layer (transistor active layer) may be replaced by an inorganic semiconductor material such as a-Si or polyfluorene (P-type organic semiconductor material). FIG. 6 is applicable to The P-type organic semiconductor layer (electrolytic active layer) of the organic semiconductor light-emitting device according to the first embodiment of the present invention has a molecular structure of a semiconductor material of -19-200926475. Fig. 6(a) is a diagram showing the molecular structure of 1,6-bis(2-(4-methylphenyl)vinyl)fluorene. Here, the description of the molecular structure is omitted. However, for example, the same applicable phenyl-based organic semiconductor material is Py 105 : 1,6 bis(2-(4-biphenyl)vinyl)fluorene, ST 10: 4, 4'bis(2-(4-octylphenyl)vinyl)biphenyl, ST126: 4,4, bis(2-(4-octylphenyl)vinyl)p--triphenyl, ST128 : 1,6 bis(2-(4-hexylphenyl)vinyl)biphenyl, fluorene 8 94:1,4 bis(2-(4-(4-butylphenyl)phenyl)vinyl) Benzene, 81'124: 4,4'bis(2-(5-octylthiophen-2-yl)vinyl)biphenyl, and the like.
第6(b)圖係蒽系材料之四苯之分子構造例，第6(c)圖 係蒽系材料之並五苯之分子構造例，第6(d)圖係酞青素系 材料之銅酞青素（CuPc)之分子構造例，第6圖（e)係a -NPD 之分子構造例，第6圖（f)係P-6P之分子構造例，第6圖（g) 係DBTBT之分子構造例，第6圖（h)係BV2TVB之分子構造 ' 例，第6圖（i)係，BP2T之分子構造例，第6圖（j)係DHADT 〇 之分子構造例。 此外，第7圖係可適用於本發明之第1實施形態之有機 半導體發光裝置之P型有機半導體層（電晶體活性層）4 〇〇的 高分子系半導體材料之分子構造例。 第7(a)圖係聚塞吩（PT)之分子構造例’第7(b)圖係聚 乙炔（PA)之分子構造例，第7(c)圖係 polythienylenevinylene(PTV)之分子構造例，第 7(d)圖係 聚-3-己烷噻吩（P3HT)之分子構造例，第7圖（e)係9,9-二辛 基莽-并噻吩共聚物（F8T2)之分子構造例。 -20- 200926475 (形成電洞傳輸層之電洞傳輸材料） 第8圖係用以形成可適用於本發明之第1實施形態之有 機半導體發光裝置之電洞傳輸層311、321、331、411、 421、431的電洞傳輸材料之分子構造例，第8(a)圖係GPD 之分子構造例，第8(b)圖係spiro-TAD之分子構造例，第 - 8(c)圖係spiro-NPD之分子構造例，第8(d)圖係oxidized- 0 TPD之分子構造例。 此外，第9圖係用以形成可適用於本發明之第1實施形 態之有機半導體發光裝置之電洞傳輸層311、321、331、 411、42 1、43 1的其他電洞傳輸材料之分子構造例，第 9(a)圖係TDAPB之分子構造例，第9(b)圖係MTDATA之分 子構造例。 ' (形成電子傳輸層之電子傳輸材料） Q 第ίο圖係用以形成本發明之第1實施形態之有機半導 體發光裝置之電子傳輸層313、323、333、413、423、433 的電子傳輸材料之分子構造例，第10(a)圖係t-butyl-PBD 之分子構造例，第10(b)圖係TAZ之分子構造例，第10(c) 圖係silole衍生物之分子構造例，第10(d)圖係硼置換型三 芳基系化合物之分子構造例，第10圖（e)係苯基喹惡啉衍 生物之分子構造例。 此外，第11圖係用以形成本發明之第1實施形態之有 機半導體發光裝置之電子傳輸層313、323、333' 413' -21 - 200926475 423、433的其他電子傳輸材料之分子構造例，第1 1(a)圖 係Alq3之分子構造例，第11(b)圖係BCP之分子構造例，第 1 1(c)圖係噁二唑二量體之分子構造例，第1 1(d)圖係 starburstH惡二哩之分子構造例。 發光層312、322、332、412、422、432，可以適用例 如載體傳輸性發光材料、或發光摻雜物及宿主材料之混合 - 層。載體傳輸性發光材料，可以使用例如Alq、Almq、 ❹ Mgq、BeBq2、ZnPBO、ZnPBT、Be(5Fla)2、Eu錯合物、 B P V B i 、 B Alq 、 B epp2 、 BDPHVBi 、 spiro-BDPVBi 、 (PSA)2Np-5、(PPA)(PSA)Pe-1、BSN、APD、BSB等之材 料。發光摻雜物及宿主材料可以使用例如香豆素6、 C 545T、Qd4、DEQ、菲、DPT、DCM2、DCJTB、紅螢烯 、DPP、CBP、ABTX、DSA、DSA胺、Co-6、PMDFB、喹 吖酮、BTX、DCM、DCJT等之材料。此外，磷光發光材 ' 料、宿主、及週邊材料可以使用PtOEP、TPBI、 ❹ btp2lr(acac)、Ir(ppy)3、Fhpic、CDBP、m-CP、人造分子 Ir(ppy)3、TCTA、CF-X、CF-Y等之材料。 此外，本發明之第1實施形態之半導體發光裝置時， 如第1圖所示，半導體發光元件部分係以底部發射型做爲 構成例，然而，亦可以爲頂部發射型或雙方發射型之構成 〇 依據本發明之第1實施形態’可提供從源極/汲極電極 之電洞注入能力較高，提高有機薄膜電晶體之特性（低電 壓驅動、高驅動電流），而且’保持有機薄膜電晶體及面 -22- 200926475 發光型有機半導體發光元件之平坦性，適合提高發光特性 及良率之集成化的有機半導體發光裝置。 依據本發明之第1實施形態，係提供可改善面發光型 有機半導體發光元件之亮度誤差、發光波長之誤差所導致 之亮點/色斑等之發光特性，抑制良率之降低，而且，因 爲面發光型有機半導體發光元件及有機薄膜電晶體可多層 - 化，而大幅提高發光效率之有機半導體發光裝置。 〇 [第2實施形態] 第2圖係本發明之第2實施形態之有機半導體發光裝置 ，係於底部接觸型之有機薄膜電晶體之週邊部實施有機半 導體發光元件之集成化的槪念剖面構造圖。 因爲有機薄膜電晶體係以有機半導體發光元件之驅動 ' 器用電晶體來構成，爲了實現低電壓驅動且高亮度發光， • 必須增大有機薄膜電晶體之開態電流。本發明之第2實施 ❹ 形態之有機半導體發光裝置，係藉由適用第2圖所示之有 機薄膜電晶體之構造，而實現高驅動電流。 本發明之第2實施形態之有機半導體發光裝置，如第2 圖所示，具備：基板10;配置於基板10上之閘極電極120 :配置於閘極電極120上之閜極絕緣膜15 ;隔離配置於閘 極絕緣膜15上之金屬層160、180;由配置於金屬層160、 180上之金屬層20、22之層狀構造所構成之源極電極（160 、20)及汲極電極（180、22);配置於源極電極（160、20)與 汲極電極（180、22)間之閘極絕緣膜15上之有機半導體層 -23- 200926475 400;配置於有機半導體層400上之電洞傳輸層411;配置 於電洞傳輸層411上之發光層412;配置於發光層412上之 電子傳輸層413;配置於電子傳輸層413上之電洞傳輸層 421;配置於電洞傳輸層421上之發光層422;配置於發光 層422上之電子傳輸層423 ;配置於電子傳輸層423上之電 洞傳輸層431;配置於電洞傳輸層431上之發光層432;配 - 置於發光層432上之電子傳輸層43 3 ;以及配置於電子傳輸 @ 層433上之導電體層60;且，具備金屬層160、180之工作 函數大於金屬層20、22之工作函數的有機薄膜電晶體。 此外，於有機薄膜電晶體之週邊部，更具備由：配置 於基板10上之陽極電極30;配置於陽極電極30上之電洞傳 輸層311 ;配置於電洞傳輸層311上之發光層312;配置於 發光層312上之電子傳輸層313;配置於電子傳輸層313上 之電洞傳輸層321;配置於電洞傳輸層321上之發光層322 • ;配置於發光層322上之電子傳輸層323;配置於電子傳輸 〇 層323上之電洞傳輸層331 ;配置於電洞傳輸層331上之發 光層332;配置於發光層332上之電子傳輸層333;以及配 置於電子傳輸層333上之陰極電極40;之層狀構造所構成 之有機半導體發光元件。 配載著有機半導體發光元件之基板10的背面，亦可配 置濾色器50。 此外，金屬層20、22係由金（Au)電極所形成，金屬層 160、180係由工作函數大於金電極之金屬氧化物所形成。 此外，金屬層2 0、2 2係由鉬氧化物層所形成。此外， -24- 200926475 金屬層20、22亦可以由鉬氧化物（Mo〇x)層及鉻層之混合層 、或鉻層及鉬氧化物層之層狀構造所形成。 例如，鉬氧化物（M〇Ox)層之膜厚爲約lnm〜5nm程度 ，最好爲約1.2nm〜4nm程度。此外，金（Au)電極之膜厚 爲例如約20nm〜200nm程度，最好爲約80nm。 此外，閘極絕緣膜1 5亦可以由鉬氧化膜所構成。 • 此外，具體而言，本發明之第2實施形態之有機半導 〇 體發光裝置之構造，如第2圖所示，具備：基板10;配置 於基板10上之厚度爲約100nm之由Al-Nd層所構成的閘極 電極120 ;配置於閘極電極120上之厚度爲約lOOnm之由鉬 氧化膜（PVD-Ta205)所構成之閘極絕緣膜15 ;隔離配置於 閘極絕緣膜15上之厚度爲約2.5nm之由鉬氧化物（1^〇0?{)層 所構成之金屬層160、180 ;由配置於金屬層160、180膜17 上之厚度爲約8〇nm之由金層所構成之金屬層20、22之層 • 狀構造所構成之源極電極（160、20)及汲極電極（180、22) 〇 ;配置於源極電極（160、20)與汲極電極（180、22)間之閘 極絕緣膜15上，例如，由後述之Pyl〇5(Me)所構成之厚度 爲約50nm之p型有機半導體層400;配置於有機半導體層 40 0上之電洞傳輸層411;配置於電洞傳輸層411上之發光 層412;配置於發光層412上之電子傳輸層413;配置於電 子傳輸層413上之電洞傳輸層421 ;配置於電洞傳輸層42 1 上之發光層42 2;配置於發光層422上之電子傳輸層423; 配置於電子傳輸層42 3上之電洞傳輸層431;配置於電洞傳 輸層431上之發光層43 2;配置於發光層432上之電子傳輸 -25- 200926475 層433;以及配置於電子傳輸層433上之導電體層60;且’ 具備金屬層160、180之工作函數大於金屬層20、22之工作 函數的有機薄膜電晶體。 此外，於有機薄膜電晶體之週邊部，更具備：由配置 於基板10上之例如由ITO所構成之陽極電極30、配置於陽 極電極30上之電洞傳輸層311、配置於電洞傳輸層311上之 - 發光層312、配置於發光層312上之電子傳輸層313、配置 ¢) 於電子傳輸層313上之電洞傳輸層321、配置於電洞傳輸層 321上之發光層322、配置於發光層3 22上之電子傳輸層323 、配置於電子傳輸層323上之電洞傳輸層331、配置於電洞 傳輸層331上之發光層332、以及配置於發光層332上之電 子傳輸層333;及配置於電子傳輸層333上，例如，由 Al/LiF層積電極所構成之陰極電極40;之層狀構造所構成 ' 之有機半導體發光元件。 • 此外，可同時形成電洞傳輸層311及411，此外，亦可 Q 同時形成電洞傳輸層321及42 1，此外，亦可同時形成電洞 傳輸層33 1及43 1。 此外，可同時形成電子傳輸層313及413，此外，亦可 同時形成電子傳輸層323及42 3，此外，亦可同時形成電子 傳輸層3 33及43 3。 此外，可同時形成發光層312及412，此外，亦可同時 形成發光層3 22及422，此外，亦可同時形成發光層332及 432 ° 此外，上述之有機半導體發光元件之層狀構造時，於 -26- 200926475 陽極電極30與電洞傳輸層311之間’亦可與有機薄膜電晶 體之層狀構造之有機半導體層400相同’介在著有機半導 體層。 本發明之第2實施形態之有機半導體發光裝置之形成 工程之以形成有機半導體層4〇〇爲目的之前處理’係對由 鉅氧化膜（PVD-Ta205)所構成之閘極絕緣膜15之表面’執 • 行以表面清淨化爲目的之以下之處理。亦即，在氣相環境 0 中，實施約60sec之Ar之逆濺鍍處理’其次，實施約2分之 UV/03處理，此外，以疏水化爲目的而實施約15分之 HMDS處理。此外，亦可實施Ar/02電漿處理。 此外，用以形成源極電極（160、20)及汲極電極（180 、22)之金層20、22，因爲其工作函數較大，對有機半導 體層400之電洞注入較爲容易，因爲鉬氧化物（M〇0X)層160 ' 、180亦具有相對較大之工作函數，可充份確保對工作函 數較大之有機半導體層400之電洞注入量。 〇 此外，如第2圖所示之底部接觸型之有機半導體電晶 體時，有機半導體層400/無機電極（160、180、20、22)界 面之接觸電阻較小。 所以，本發明之第2實施形態之有機半導體發光裝置 之汲極電流Id-汲極電壓VD特性，可得到接通電阻較低、 開態電流較高的結果。 亦即，依據本發明之第2實施形態之有機半導體發光 裝置，有機薄膜電晶體部分，藉由源極電極（160、20)及 汲極電極（180、22)構造之改善效果，可增大對有機半導 -27- 200926475 體層40 0之電洞注入量、降低接觸電阻，而且，可實現接 通電阻之低減化、開態電流之增大化、互導之增大化。 此外，最終之構造，第2圖中省略了圖示，然而，亦 可以於導電體層60及陰極電極40上，藉由以低温生長所形 成之窒化膜及矽氧化膜、或鈍化膜來形成該等層狀構造。 或者，亦可以鈍化膜來形成無機膜及有機膜之層積膜。此 • 外，亦可具備以特定空間包圍之密封罐的封裝構造。 〇 此外，本發明之第2實施形態之有機半導體發光裝置 ，有機薄膜電晶體部分，Ρ型有機半導體層400之HOMO之 能階絕對値應大於帽蓋用導電體層60之工作函數的絕對値 〇 以η型有機半導體層取代ρ型有機半導體層400時，η型 有機半導體層之LUMO之能階絕對値應小於導電體層之工 作函數絕對値。 電洞傳輸層411、421、431可以使用例如a -NPD。 © 電子傳輸層412、422、432可以由例如Alq3等所形成 〇 導電體層60可以由例如Mg、Ag、Al、Ca、Li、Cs、 Ni、Ti等之金屬材料、由LiF/Al所構成之金屬層狀構造、 ITO、izo等之無機導電體材料、PEDOT等之有機導電體 材料所形成。 P型有機半導體層400與導電體層60之間，可以藉由以 電涧傳輸層411、421、431、發光層412、422、432、及電 子傳輸層413、423、433之層狀構造所構成之Pn二極體’ -28- 200926475 來防止源極電極16與汲極電極18間之短路。亦即，藉由上 述pn二極體，可防止載體之逆流，原理上，不會介由導電 體層60發生源極·汲極間之短路。 當做P型電晶體，而對源極•汲極間施加偏電壓時， 導電體層60及汲極電極（180、22)間，因爲電場方向爲相 當於pn接合之逆向偏壓，不會介由導電體層60而於源極電 • 極（160、20)與汲極電極（180、22)間發生短路。 φ 同樣地，對源極·汲極間施加偏電壓時，帽蓋用之導 電體層60與源極電極（160、20)間，因爲係相當於pn接合 之順向偏壓，帽蓋用之導電體層60，藉由從源極電極（基 準電位）朝pn接合之順向電壓下降（Vf)份之電位差而處於 安定。此外，P型有機半導體層（電晶體活性層）400內部之 電位，藉由帽蓋用導電體層60之電磁屏蔽效果而安定化。 ^ 本發明之第2實施形態之有機半導體發光裝置之構造 ' 時，各電極、各層係分別以濺鍍、蒸鑛、塗佈等來進行成 ❹ 膜。 基板10之材料可以使用與第1實施形態相同之材料。 閘極電極120之材料亦可以使用與第1實施形態相同之 材料。 閘極絕緣膜1 5之材料亦可以使用與第1實施形態相同 之材料。 源極電極（160、20)及汲極電極（180、22)之材料亦可 以使用與第1實施形態相同之材料。 P型有機半導體層（電晶體活性層）4 00，例如，亦可以 -29- 200926475 a-Si、聚矽等之無機半導體材料等置換形成。 (P型有機半導體材料） 第6圖至第7圖所示之P型有機半導體材料之分子構造 例，係與本發明之第2實施形態之有機半導體發光裝置相 同。 © (形成電洞傳輸層之電洞傳輸材料） 第8圖至第9圖所示之電洞傳輸材料之分子構造例，係 與本發明之第2實施形態之有機半導體發光裝置相同。 (形成電子傳輸層之電子傳輸材料） 第10圖至第11圖所示之電子傳輸材料之分子構造例， 係與本發明之第2實施形態之有機半導體發光裝置相同。 〇 (載體傳輸性發光材料、或發光摻雜物及宿主材料） 發光層312、322、332、412、422、432，係與本發明 之第1實施形態之有機半導體發光裝置之載體傳輸性發光 材料、或發光摻雜物及宿主材料相同之材料。 此外，本發明之第2實施形態之半導體發光裝置，如 第2圖所示，有機半導體發光元件部分，係以底部發射型 做爲構成例，然而，亦可爲頂部發射型或雙方發射型之構 成。 依據本發明之第2實施形態，係將有機薄膜電晶體及 -30- 200926475 面發光型有機半導體發光元件集成化於同一基板上之有機 半導體發光裝置，可提供從源極/汲極電極之電洞注入能 力較高，提高有機薄膜電晶體之特性（低電壓驅動、高驅 動電流），而且，保持有機薄膜電晶體及面發光型有機半 導體發光元件之平坦性，適合提高發光特性及良率之集成 化的有機半導體發光裝置。 . 依據本發明之第2實施形態之有機半導體發光裝置， 0 係提供可改善面發光型有機半導體發光元件之亮度誤差、 發光波長之誤差所導致之亮點/色斑等之發光特性，抑制 良率之降低而且，因爲面發光型有機半導體發光元件及有 機薄膜電晶體可多層化，而大幅提高發光效率。 [第3實施形態] ' 第3圖係本發明之第3實施形態之有機半導體發光裝置 _ ，係於底部接觸型之有機薄膜電晶體之週邊部實施有機半 φ 導體發光元件之集成化的槪念剖面構造圖。 因爲有機薄膜電晶體係以有機半導體發光元件之驅動 器用電晶體來構成，爲了實現低電壓驅動且高亮度發光， 必須增大有機薄膜電晶體之開態電流。本發明之第3實施 形態之有機半導體發光裝置，係藉由利用層積閘極絕緣膜 之高開態電流及第3圖所示之有機薄膜電晶體之源極/汲極 電極構造而實現高驅動電流。 本發明之第3實施形態之有機半導體發光裝置，如第3 圖所示，具備：基板10;配置於基板10上之閘極電極120 -31 - 200926475 :配置於閘極電極120上之閘極絕緣膜15;配置於閘極絕 緣膜15上之閘極絕緣膜170;隔離配置於閘極絕緣膜170上 之金屬層160、180;由配置於金屬層160、180上之金屬層 20、22之層狀構造所構成之源極電極（160、20)及汲極電 極（180、22);配置於源極電極（160、20)及汲極電極（180 、22)間之閘極絕緣膜170上之有機半導體層400;配置於 - 有機半導體層400上之電洞傳輸層411 ;配置於電洞傳輸層 φ 411上之發光層412;配置於發光層412上之電子傳輸層413 :配置於電子傳輸層413上之電洞傳輸層421 ;配置於電洞 傳輸層421上之發光層422 ;配置於發光層422上之電子傳 輸層423;配置於電子傳輸層423上之電洞傳輸層431 ;配 置於電洞傳輸層431上之發光層432;配置於發光層43 2上 之電子傳輸層433;以及配置於電子傳輸層433上之導電體 " 層60 ;且，具備金屬層160、180之工作函數大於金屬層20 、22之工作函數的有機薄膜電晶體。 Q 配載著有機半導體發光元件之基板1〇的背面’亦可配 置濾色器50。 此外，於有機薄膜電晶體之週邊部’更具備；配置於 基板10上之陽極電極30;配置於陽極電極30上之電洞傳輸 層311 ;配置於電洞傳輸層311上之發光層312;配置於發 光層312上之電子傳輸層313;配置於電子傳輸層313上之 電洞傳輸層321 ;配置於電洞傳輸層321上之發光層322; 配置於發光層322上之電子傳輸層323;配置於電子傳輸層 323上之電洞傳輸層331 ;配置於電洞傳輸層331上之發光 -32- 200926475 層332;以及配置於發光層332上之電子傳輸層333。 此外，金屬層20、22係由金（Au)電極所形成，金屬層 160、180係由工作函數大於Au電極之金屬氧化物所形成 〇 此外，金屬層160、180係由鉬氧化物（MoOx)層所形成 〇 • 例如，鉬氧化物（MoOx)層之膜厚爲約lnm〜5nm程度 ，最好爲約1.2nm〜4nm程度。此外，金（Au)電極之膜厚 ，例如，約爲20nm〜200nm程度，最好爲約80nm。 或者，金屬層1 60、1 80亦可以由鉬氧化物（MoOx)層、 及例如厚度爲約〇.5nm程度之極薄之鉻（C〇層之混合層所 形成。或者，金屬層160、180亦可以由絡（Cr)層及鉬氧化 物（M〇Ox)層之層狀構造（Cr/M〇Ox)所形成。 此處，Mo (^層之膜厚t，係針對與閘極絕緣膜170之 ' 密貼性、及與源極/汲極電極之金（Au)層之密貼性的觀點 G 來進行說明。Figure 6(b) shows the molecular structure of tetraphenylene in the lanthanide material, Figure 6(c) shows the molecular structure of the pentacene in the lanthanide material, and Figure 6(d) shows the molecular structure of the phthalocyanine. Molecular structure of copper anthraquinone (CuPc), Fig. 6 (e) is a molecular structure of a-NPD, Fig. 6 (f) is a molecular structure of P-6P, and Fig. 6 (g) is a DBTBT The molecular structure example, Fig. 6(h) is a molecular structure of BV2TVB', the sixth figure (i) is a molecular structure example of BP2T, and Fig. 6(j) is a molecular structure example of DHADT. In addition, Fig. 7 is a molecular structure example of a polymer-based semiconductor material which can be applied to a P-type organic semiconductor layer (electrolyte active layer) 4 of the organic semiconductor light-emitting device according to the first embodiment of the present invention. Fig. 7(a) is a molecular structure example of polythiophene (PT) 'Fig. 7(b) is a molecular structure example of polyacetylene (PA), and Fig. 7(c) is a molecular structure example of polythienylenevinylene (PTV). Fig. 7(d) is a molecular structure example of poly-3-hexanethiophene (P3HT), and Fig. 7(e) is a molecular structure example of 9,9-dioctylfluorene-and thiophene copolymer (F8T2). . -20- 200926475 (Curve-transmission material forming a hole transport layer) Fig. 8 is a hole transport layer 311, 321, 331, 411 for forming an organic semiconductor light-emitting device according to the first embodiment of the present invention. Molecular structure examples of hole transport materials of 421 and 431, molecular structure examples of GPD in Fig. 8(a), molecular structure examples of spiro-TAD in Fig. 8(b), and Fig. 8(c) The molecular structure of spiro-NPD, and the eighth (d) diagram is a molecular structure of oxidized-0 TPD. Further, Fig. 9 is a view showing the formation of molecules of other hole transporting materials which can be applied to the hole transport layers 311, 321, 331, 411, 42 1 and 43 1 of the organic semiconductor light-emitting device according to the first embodiment of the present invention. In the structural example, the 9th (a) diagram is a molecular structure example of TDAPB, and the 9th (b) diagram is a molecular structure example of MTDATA. ' (Electron-transporting material forming an electron-transporting layer) Q. The drawing is an electron-transporting material for forming the electron-transporting layers 313, 323, 333, 413, 423, and 433 of the organic semiconductor light-emitting device according to the first embodiment of the present invention. The molecular structure example, the 10th (a) is a molecular structure example of t-butyl-PBD, the 10th (b) is a molecular structure example of TAZ, and the 10th (c) is a molecular structure example of a silole derivative. Fig. 10(d) is a molecular structure example of a boron-substituted triaryl compound, and Fig. 10(e) is a molecular structure example of a phenylquinoxaline derivative. Further, Fig. 11 is a molecular structure example of another electron transporting material for forming the electron transporting layers 313, 323, 333' 413'-21-200926475 423, 433 of the organic semiconductor light-emitting device according to the first embodiment of the present invention. The first 1 (a) is a molecular structure example of Alq3, the 11th (b) is a molecular structure example of BCP, and the 1st (1) is a molecular structure example of an oxadiazole dimer, and the 1st (1) d) The molecular structure of the starburstH dioxin. The light-emitting layers 312, 322, 332, 412, 422, and 432 may be, for example, a carrier-transporting luminescent material, or a mixed-layer of luminescent dopants and host materials. As the carrier-transporting luminescent material, for example, Alq, Almq, ❹Mgq, BeBq2, ZnPBO, ZnPBT, Be(5Fla)2, Eu complex, BPVB i , B Alq , B epp2 , BDPHVBi , spiro-BDPVBi , (PSA) can be used. 2Np-5, (PPA) (PSA) Pe-1, BSN, APD, BSB, etc. For luminescent dopants and host materials, for example, coumarin 6, C 545T, Qd4, DEQ, phenanthrene, DPT, DCM2, DCJTB, erythritol, DPP, CBP, ABTX, DSA, DSA amine, Co-6, PMDFB can be used. , Quinone, BTX, DCM, DCJT and other materials. In addition, PtOEP, TPBI, ❹btp2lr(acac), Ir(ppy)3, Fhpic, CDBP, m-CP, artificial molecule Ir(ppy)3, TCTA, CF can be used as the phosphorescent material, host, and peripheral materials. -X, CF-Y and other materials. Further, in the semiconductor light-emitting device according to the first embodiment of the present invention, as shown in Fig. 1, the semiconductor light-emitting device portion has a bottom emission type as a configuration example, but may be a top emission type or a two-emitting type. According to the first embodiment of the present invention, it is possible to provide a high hole injection capability from the source/drain electrodes, improve the characteristics of the organic thin film transistor (low voltage driving, high driving current), and 'maintain the organic thin film electricity. Crystal and Surface-22- 200926475 The flatness of the light-emitting organic semiconductor light-emitting device is suitable for an integrated organic semiconductor light-emitting device that improves light-emitting characteristics and yield. According to the first embodiment of the present invention, it is possible to improve the light-emitting characteristics such as brightness and color unevenness caused by the luminance error of the surface-emitting organic semiconductor light-emitting device and the error of the light-emitting wavelength, and to suppress the decrease in the yield, and An organic semiconductor light-emitting device in which a light-emitting organic semiconductor light-emitting device and an organic thin film transistor can be multi-layered to greatly improve luminous efficiency.第 [Second Embodiment] The second embodiment of the present invention is an organic semiconductor light-emitting device according to a second embodiment of the present invention, which is a commemorative cross-sectional structure in which an organic semiconductor light-emitting device is integrated in a peripheral portion of a bottom-contact type organic thin film transistor. Figure. Since the organic thin film electro-crystal system is formed by an organic semiconductor light-emitting element driven by a transistor, in order to realize low-voltage driving and high-brightness light emission, it is necessary to increase the on-state current of the organic thin film transistor. In the organic semiconductor light-emitting device of the second embodiment of the present invention, a high drive current is realized by applying the structure of the organic thin film transistor shown in Fig. 2. As shown in Fig. 2, the organic semiconductor light-emitting device according to the second embodiment of the present invention includes a substrate 10, a gate electrode 120 disposed on the substrate 10, and a drain insulating film 15 disposed on the gate electrode 120; The metal layers 160 and 180 disposed on the gate insulating film 15 are separated; the source electrodes (160, 20) and the drain electrodes formed by the layered structure of the metal layers 20 and 22 disposed on the metal layers 160 and 180. (180, 22); an organic semiconductor layer -23-200926475 400 disposed on the gate insulating film 15 between the source electrode (160, 20) and the drain electrode (180, 22); disposed on the organic semiconductor layer 400 a hole transport layer 411; a light-emitting layer 412 disposed on the hole transport layer 411; an electron transport layer 413 disposed on the light-emitting layer 412; a hole transport layer 421 disposed on the electron transport layer 413; a light-emitting layer 422 on the transport layer 421; an electron transport layer 423 disposed on the light-emitting layer 422; a hole transport layer 431 disposed on the electron transport layer 423; a light-emitting layer 432 disposed on the hole transport layer 431; An electron transport layer 43 3 disposed on the light emitting layer 432; and a guide disposed on the electron transport layer 433 Layer 60; and, the metal layers 160 and 180 have a work function greater than the work function of the organic thin film transistor of the metal layers 20 and 22. Further, the peripheral portion of the organic thin film transistor further includes an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light emitting layer 312 disposed on the hole transport layer 311. An electron transport layer 313 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 321; and an electron transport disposed on the light-emitting layer 322 a layer 323; a hole transport layer 331 disposed on the electron transport layer 323; a light-emitting layer 332 disposed on the hole transport layer 331; an electron transport layer 333 disposed on the light-emitting layer 332; and an electron transport layer 333 An organic semiconductor light-emitting device comprising a layered structure of the upper cathode electrode 40; The color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light-emitting device is mounted. Further, the metal layers 20, 22 are formed of gold (Au) electrodes, and the metal layers 160, 180 are formed of metal oxides having a larger work function than the gold electrodes. Further, the metal layers 20, 2 2 are formed of a molybdenum oxide layer. Further, the -24-200926475 metal layers 20, 22 may be formed of a mixed layer of a molybdenum oxide (Mo〇x) layer and a chromium layer, or a layered structure of a chromium layer and a molybdenum oxide layer. For example, the film thickness of the molybdenum oxide (M〇Ox) layer is about 1 nm to 5 nm, preferably about 1.2 nm to 4 nm. Further, the film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, preferably about 80 nm. Further, the gate insulating film 15 may be composed of a molybdenum oxide film. In addition, the structure of the organic semiconductor light-emitting device according to the second embodiment of the present invention includes a substrate 10 as shown in Fig. 2, and Al is disposed on the substrate 10 to a thickness of about 100 nm. a gate electrode 120 composed of a -Nd layer; a gate insulating film 15 made of a molybdenum oxide film (PVD-Ta205) having a thickness of about 100 nm disposed on the gate electrode 120; and being disposed on the gate insulating film 15 The metal layer 160, 180 consisting of a layer of molybdenum oxide (1^〇0?{) having a thickness of about 2.5 nm; and having a thickness of about 8 〇 nm disposed on the film of the metal layer 160, 180 The source electrode (160, 20) and the drain electrode (180, 22) formed by the layer structure of the metal layers 20 and 22 composed of the gold layer; the source electrode (160, 20) and the drain electrode On the gate insulating film 15 between the electrodes (180, 22), for example, a p-type organic semiconductor layer 400 having a thickness of about 50 nm composed of Pyl〇5 (Me) to be described later; and being disposed on the organic semiconductor layer 40 0 a hole transport layer 411; a light-emitting layer 412 disposed on the hole transport layer 411; an electron transport layer 413 disposed on the light-emitting layer 412; a hole transport layer 421 on 413; a light-emitting layer 42 2 disposed on the hole transport layer 42 1; an electron transport layer 423 disposed on the light-emitting layer 422; and a hole transport layer 431 disposed on the electron transport layer 42 3 a light-emitting layer 43 2 disposed on the hole transport layer 431; an electron transport-25-200926475 layer 433 disposed on the light-emitting layer 432; and a conductor layer 60 disposed on the electron transport layer 433; and 'having a metal layer 160 An organic thin film transistor having a working function of 180 greater than the working function of the metal layers 20, 22. Further, the peripheral portion of the organic thin film transistor further includes an anode electrode 30 made of, for example, ITO disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer disposed on the hole transport layer. The light-emitting layer 312, the electron transport layer 313 disposed on the light-emitting layer 312, the hole transport layer 321 disposed on the electron transport layer 313, and the light-emitting layer 322 disposed on the hole transport layer 321 are disposed. An electron transport layer 323 on the light-emitting layer 3 22 , a hole transport layer 331 disposed on the electron transport layer 323 , a light-emitting layer 332 disposed on the hole transport layer 331 , and an electron transport layer disposed on the light-emitting layer 332 333; and an organic semiconductor light-emitting element which is disposed on the electron transport layer 333, for example, a cathode electrode 40 composed of an Al/LiF laminated electrode; and a layered structure of the layered structure. Further, the hole transport layers 311 and 411 can be formed at the same time, and the hole transport layers 321 and 42 1 can be simultaneously formed by Q, and the hole transport layers 33 1 and 43 1 can be simultaneously formed. Further, the electron transport layers 313 and 413 may be simultaneously formed, and the electron transport layers 323 and 42 3 may be simultaneously formed, and the electron transport layers 3 33 and 43 3 may be simultaneously formed. Further, the light-emitting layers 312 and 412 may be simultaneously formed, and the light-emitting layers 3 22 and 422 may be simultaneously formed, and the light-emitting layers 332 and 432 may be simultaneously formed. Further, in the layered structure of the above-described organic semiconductor light-emitting element, Between -26 and 200926475, the anode electrode 30 and the hole transport layer 311 may be the same as the organic semiconductor layer 400 of the layered structure of the organic thin film transistor. In the formation of the organic semiconductor light-emitting device according to the second embodiment of the present invention, the surface of the gate insulating film 15 composed of a giant oxide film (PVD-Ta205) is processed for the purpose of forming the organic semiconductor layer 4 'The following treatments are carried out for the purpose of surface cleaning. That is, in the gas phase environment 0, the reverse sputtering treatment of Ar for about 60 sec was carried out. Next, the UV/03 treatment was carried out for about 2 minutes, and the HMDS treatment of about 15 minutes was carried out for the purpose of hydrophobization. In addition, Ar 02 plasma treatment can also be carried out. In addition, the gold layers 20, 22 for forming the source electrodes (160, 20) and the drain electrodes (180, 22) are easier to implant into the organic semiconductor layer 400 because of the larger work function because The molybdenum oxide (M〇0X) layers 160' and 180 also have a relatively large work function, which can sufficiently ensure the amount of hole injection into the organic semiconductor layer 400 having a large work function. Further, in the case of the bottom contact type organic semiconductor transistor shown in Fig. 2, the contact resistance at the interface between the organic semiconductor layer 400 / the inorganic electrode (160, 180, 20, 22) is small. Therefore, the characteristics of the drain current Id-drain voltage VD of the organic semiconductor light-emitting device according to the second embodiment of the present invention have a low on-resistance and a high on-state current. In other words, according to the organic semiconductor light-emitting device of the second embodiment of the present invention, the organic thin film transistor portion can be increased by the improvement effect of the source electrode (160, 20) and the drain electrode (180, 22) structure. The organic semiconductor -27-200926475 body layer 40 0 hole injection amount, reduce the contact resistance, and can achieve the reduction of the on-resistance, the increase of the on-state current, and the increase of the mutual conductance. Further, although the final structure is omitted in FIG. 2, the conductive layer 60 and the cathode electrode 40 may be formed on the conductor layer 60 and the cathode electrode 40 by a vaporized film, a tantalum oxide film or a passivation film formed by low-temperature growth. Equal layered structure. Alternatively, a film may be formed by passivation to form a laminated film of an inorganic film and an organic film. In addition to this, it is also possible to have a package structure of a sealed can surrounded by a specific space. Further, in the organic semiconductor light-emitting device according to the second embodiment of the present invention, the organic thin film transistor portion and the HOMO of the germanium-type organic semiconductor layer 400 have an absolute energy level which is larger than the absolute value of the work function of the cap conductor layer 60. When the p-type organic semiconductor layer 400 is replaced by an n-type organic semiconductor layer, the absolute order of the LUMO of the n-type organic semiconductor layer should be smaller than the absolute value of the work function of the conductor layer. The hole transport layers 411, 421, 431 can use, for example, a-NPD. © The electron transport layers 412, 422, and 432 may be formed of, for example, Alq3 or the like. The germanium conductor layer 60 may be composed of a metal material such as Mg, Ag, Al, Ca, Li, Cs, Ni, Ti, or the like, and composed of LiF/Al. It is formed of a metal layered structure, an inorganic conductor material such as ITO or izo, or an organic conductor material such as PEDOT. The P-type organic semiconductor layer 400 and the conductor layer 60 may be formed by a layered structure of the electron transport layers 411, 421, 431, the light-emitting layers 412, 422, and 432, and the electron transport layers 413, 423, and 433. The Pn diode '-28-200926475 prevents a short circuit between the source electrode 16 and the drain electrode 18. That is, with the above pn diode, the reverse flow of the carrier can be prevented, and in principle, a short circuit between the source and the drain is not caused by the conductor layer 60. When a P-type transistor is applied and a bias voltage is applied between the source and the drain, between the conductor layer 60 and the drain electrode (180, 22), since the direction of the electric field is equivalent to the reverse bias of the pn junction, it is not impeded. The conductor layer 60 is short-circuited between the source electrodes (160, 20) and the drain electrodes (180, 22). φ Similarly, when a bias voltage is applied between the source and the drain, the cap layer for the conductor layer 60 and the source electrode (160, 20) is equivalent to the forward bias of the pn junction, and the cap is used. The conductor layer 60 is stabilized by a potential difference from the source electrode (reference potential) to the forward voltage drop (Vf) of the pn junction. Further, the potential inside the P-type organic semiconductor layer (electrooptic active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60. In the structure of the organic semiconductor light-emitting device according to the second embodiment of the present invention, each of the electrodes and the respective layers is formed into a film by sputtering, steaming, coating or the like. The material of the substrate 10 can be the same as that of the first embodiment. The material of the gate electrode 120 can also be the same as that of the first embodiment. The material of the gate insulating film 15 can also be the same as that of the first embodiment. The material of the source electrode (160, 20) and the drain electrode (180, 22) may be the same as that of the first embodiment. The P-type organic semiconductor layer (transistor active layer) 400 may be formed by, for example, -29-200926475 a-Si, an inorganic semiconductor material such as polyfluorene or the like. (P-type organic semiconductor material) The molecular structure of the P-type organic semiconductor material shown in Fig. 6 to Fig. 7 is the same as that of the organic semiconductor light-emitting device according to the second embodiment of the present invention. © (Cell transport material forming the hole transport layer) The molecular structure of the hole transport material shown in Figs. 8 to 9 is the same as that of the organic semiconductor light-emitting device according to the second embodiment of the present invention. (Electron-transmitting material forming an electron-transporting layer) The molecular structure of the electron-transporting material shown in Figs. 10 to 11 is the same as that of the organic semiconductor light-emitting device according to the second embodiment of the present invention. 〇 (carrier-transporting luminescent material, luminescent dopant, and host material) luminescent layers 312, 322, 332, 412, 422, and 432 are carrier-transmitting luminescence of the organic semiconductor light-emitting device according to the first embodiment of the present invention. The material, or the luminescent dopant and the host material are the same material. Further, in the semiconductor light-emitting device according to the second embodiment of the present invention, as shown in Fig. 2, the organic semiconductor light-emitting device portion has a bottom emission type as a configuration example, but may be a top emission type or a two-emitting type. Composition. According to a second embodiment of the present invention, an organic thin film light-emitting device in which an organic thin film transistor and a -30-200926475 surface-emitting organic semiconductor light-emitting device are integrated on the same substrate can provide electricity from a source/drain electrode. The hole injection capability is high, the characteristics of the organic thin film transistor (low voltage driving, high driving current) are improved, and the flatness of the organic thin film transistor and the surface emitting organic semiconductor light emitting element is maintained, which is suitable for improving the light emitting characteristics and the yield. Integrated organic semiconductor light emitting device. According to the organic semiconductor light-emitting device of the second embodiment of the present invention, the light-emitting characteristics of the bright spot/color unevenness caused by the luminance error of the surface-emitting organic semiconductor light-emitting device and the error of the light-emitting wavelength are improved, and the yield is suppressed. Further, since the surface-emitting organic semiconductor light-emitting device and the organic thin film transistor can be multilayered, the light-emitting efficiency is greatly improved. [Third Embodiment] The third embodiment is an organic semiconductor light-emitting device according to a third embodiment of the present invention, which is an integrated organic semi-φ conductor light-emitting device in a peripheral portion of a bottom contact type organic thin film transistor. Read the section structure diagram. Since the organic thin film electro-crystal system is constituted by a transistor for an organic semiconductor light-emitting element, in order to realize low-voltage driving and high-intensity light emission, it is necessary to increase the on-state current of the organic thin film transistor. The organic semiconductor light-emitting device according to the third embodiment of the present invention achieves high by using a high-state current of the laminated gate insulating film and a source/drain electrode structure of the organic thin film transistor shown in FIG. Drive current. As shown in FIG. 3, the organic semiconductor light-emitting device according to the third embodiment of the present invention includes a substrate 10 and a gate electrode 120 - 31 - 200926475 disposed on the substrate 10 : a gate disposed on the gate electrode 120 The insulating film 15; the gate insulating film 170 disposed on the gate insulating film 15; the metal layers 160 and 180 disposed on the gate insulating film 170; and the metal layers 20 and 22 disposed on the metal layers 160 and 180 a source electrode (160, 20) and a drain electrode (180, 22) formed by a layered structure; a gate insulating film disposed between the source electrode (160, 20) and the drain electrode (180, 22) An organic semiconductor layer 400 on 170; a hole transport layer 411 disposed on the organic semiconductor layer 400; a light emitting layer 412 disposed on the hole transport layer φ 411; and an electron transport layer 413 disposed on the light emitting layer 412: a hole transport layer 421 on the electron transport layer 413; a light-emitting layer 422 disposed on the hole transport layer 421; an electron transport layer 423 disposed on the light-emitting layer 422; and a hole transport layer disposed on the electron transport layer 423 431; a light-emitting layer 432 disposed on the hole transport layer 431; and an electron disposed on the light-emitting layer 43 2 Transporting layer 433; and a conductive member disposed on the electron transporting layer 433 " layer 60; and, provided with a metal layer 160 and 180 is larger than the work function of the metal layer 20, 22 of the work function of the organic thin film transistor. The color filter 50 may be disposed on the back surface of the substrate 1 on which the organic semiconductor light-emitting device is mounted. Further, the peripheral portion of the organic thin film transistor is further provided; the anode electrode 30 disposed on the substrate 10; the hole transport layer 311 disposed on the anode electrode 30; and the light emitting layer 312 disposed on the hole transport layer 311; An electron transport layer 313 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 321; and an electron transport layer 323 disposed on the light-emitting layer 322 a hole transport layer 331 disposed on the electron transport layer 323; a light-emitting layer - 32 - 200926475 layer 332 disposed on the hole transport layer 331; and an electron transport layer 333 disposed on the light-emitting layer 332. Further, the metal layers 20, 22 are formed of gold (Au) electrodes, the metal layers 160, 180 are formed of a metal oxide having a larger working function than the Au electrode, and the metal layers 160, 180 are made of molybdenum oxide (MoOx). The layer formed by the layer is, for example, a film thickness of the molybdenum oxide (MoOx) layer of about 1 nm to 5 nm, preferably about 1.2 nm to 4 nm. Further, the film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, preferably about 80 nm. Alternatively, the metal layers 1 60, 1 80 may also be formed of a molybdenum oxide (MoOx) layer and, for example, a very thin layer of chromium (a mixed layer of C 〇 layers having a thickness of about 0.5 nm). Alternatively, the metal layer 160, 180 can also be formed by a layered structure (Cr/M〇Ox) of a layer of a (Cr) layer and a layer of molybdenum oxide (M〇Ox). Here, the film thickness t of Mo (the layer is directed to the gate) The viewpoint G of the insulating film 170 and the adhesion to the gold (Au) layer of the source/drain electrode will be described.
MoOx層相較於Cr層，因爲工作函數較大，可提高有 機薄膜電晶體之電流驅動能力。然而，Mo (^層，相較於 Cr層，閘極絕緣膜之Si02膜、與源極/汲極電極之金層的 界面密貼性較低。其一例之MoOx(tnm)/Au(80nm)層積型電 極構造時，t = 2.5nm時，發射（liftoff)處理中之源極/汲極 電極不會發生剝離。試作後之帶測試亦無源極/汲極電極 之剝離。所以，t = 2.5nm時，確保相對較充份之密貼性。 另一方面，t=1.2nni時，發射處理中之源極/汲極電極未發 -33- 200926475 生剝離’然而’試作後之帶測試，於Si〇2/MoOx界面，可 觀測到源極/汲極電極之剝離。此外，t = 5nm時，發射處理 中，於Si〇2/MoOx界面，觀測到源極/汲極電極之剝離。其 係因爲MoOx層之膜應力導致密貼力大幅降低。 提高密貼性之方法，可以利用Cr層及厘…^^層之共沉 積來形成Cr-MoOx密貼層。例如，可以形成Cr(33wt%)-• MoOx(67wt%)之2.5nm的Cr-MoOx混合層。或者，亦可以形 〇 成Cr層及MoOx層之層狀構造的Cr/MoOx密貼層。例如，可 以形成（Cr層（2.5nm))之層狀構造。 此外’閘極絕緣膜15係由介電常數高於閘極絕緣膜 170之絕緣膜所構成，閘極絕緣膜170係由薄於閘極絕緣膜 15之矽氧化膜所構成，全體具有層積型閘極絕緣膜構造》 此外，閘極絕緣膜1 5亦可以由鉬氧化膜所構成。 此外，閘極絕緣膜15係由例如厚度爲100nm以下之钽 ' 氧化膜所構成，閘極絕緣膜1 70係由薄於閘極絕緣膜1 5之 〇 例如約20nm以下之矽氧化膜所構成，而使全體具有層積 型閘極絕緣膜構造。 此外，具體而言，本發明之第3實施形態之有機半導 體發光裝置之構造，如第3圖所示，具備：基板10;配置 於基板1〇上之厚度爲約l〇〇nm之由Al-Nd層所構成的閘極 電極120;配置於閘極電極120上之厚度爲約10 Onm之由鉅 氧化膜（PVD-Ta205)所構成之閘極絕緣膜15 ;配置於閘極 絕緣膜15上之厚度爲約10nm之由矽氧化膜（CVD-Si02)所 構成之閘極絕緣膜170;由隔離配置於閘極絕緣膜170上之 -34- 200926475 厚度爲約2.5nm之由鉬氧化物（M〇Ox)層所構成之金屬層160 、180及厚度爲約80nm之由金層所構成之金屬層20、22之 層狀構造所構成之源極電極（160、20)及汲極電極（180、 22);配置於源極電極（160、20)及汲極電極（180、22)間之 閘極絕緣膜170上之例如由Pyl05(Me)所構成之厚度爲約 50nm之p型有機半導體層400;配置於有機半導體層400上 . 之電洞傳輸層411 ;配置於電洞傳輸層411上之發光層412 φ :配置於發光層41 2上之電子傳輸層413;配置於電子傳輸 層413上之電洞傳輸層421;配置於電洞傳輸層421上之發 光層422 ;配置於發光層422上之電子傳輸層423;配置於 電子傳輸層423上之電洞傳輸層431;配置於電洞傳輸層 431上之發光層432;配置於發光層432上之電子傳輸層433 :以及配置於電子傳輸層433上之導電體層60;且，具備 ' 金屬層160、180之工作函數大於金屬層20、22之工作函數 • 的有機薄膜電晶體。 Q 此外，於有機薄膜電晶體之週邊部，更具備由：配置 於基板10上之由例如ITO所構成之陽極電極30;配置於陽 極電極30上之電洞傳輸層311 ;配置於電洞傳輸層311上之 發光層312;配置於發光層312上之電子傳輸層313;配置 於電子傳輸層313上之電洞傳輸層321;配置於電洞傳輸層 321上之發光層322;配置於發光層322上之電子傳輸層323 :配置於電子傳輸層323上之電洞傳輸層331 ;配置於電洞 傳輸層331上之發光層332;配置於發光層332上之電子傳 輸層333 ;以及配置於電子傳輸層333上之由例如Al/LiF層 -35- 200926475 積電極所構成之陰極電極40;之層狀構造所構成的有機半 導體發光元件。 此外，可同時形成電洞傳輸層311及411，此外，亦可 同時形成電洞傳輸層321及421，此外，亦可同時形成電洞 傳輸層331及431。 此外，可同時形成電子傳輸層313及413，此外，亦可 • 同時形成電子傳輸層323及423，此外，亦可同時形成電子 φ 傳輸層333及43 3。 此外，可同時形成發光層312及412，此外，亦可同時 形成發光層322及422，此外，亦可同時形成發光層332及 432。 此外，上述之有機半導體發光元件之層狀構造時，於 陽極電極30與電洞傳輸層311之間，亦可與有機薄膜電晶 體之層狀構造之有機半導體層4 0 0相同，介在著有機半導 • 體層。 〇 本發明之第3實施形態之有機半導體發光裝置之形成 工程之以形成有機半導體層4 00爲目的之前處理，也是對 由矽氧化膜（CVD-Si02)所構成之閘極絕緣膜170之表面， 執行以表面清淨化爲目的之以下之處理。亦即，在氣相環 境中，實施約6〇SeC之Ar之逆濺鍍處理，其次，實施約2分 之UV/03處理，此外，以疏水化爲目的而實施約15分之 HMDS處理。此外，亦可實施Ar/02電槳處理。 此外’用以形成源極電極（160、20)及汲極電極（180 、22)之金（Au)層20、22，因爲其工作函數較大，對有機 -36- 200926475 半導體層400之電洞注入較爲容易，因爲鉬氧化物（M〇Ox) 層160、180亦具有相對較大之工作函數，可充份確保對工 作函數較大之有機半導體層400之電洞注入量。 此外，如第3圖所示之底部接觸型之有機半導體電晶 體時，有機半導體層400/無機電極（160、180、20、22)界 面之接觸電阻較小。 . 所以，本發明之第3實施形態之有機半導體發光裝置 0 之汲極電流Id-汲極電壓VD特性，可得到接通電阻較低、 開態電流較高的結果。 亦即，依據本發明之第3實施形態之有機半導體發光 裝置，有機薄膜電晶體部分，藉由源極電極（160、20)及 汲極電極（180、22)構造之改善效果，可增大對有機半導 體層400之電洞注入量、降低接觸電阻，而且，可實現接 通電阻之低減化、開態電流之增大化、互導之增大化。 ' 此外，最終之構造，第3圖中省略了圖示，然而，亦 〇 可以於導電體層60及陰極電極40上，藉由以低温生長所形 成之窒化膜及矽氧化膜、或鈍化膜來形成該等層狀構造。 或者，亦可以鈍化膜來形成無機膜及有機膜之層積膜。此 外，亦可具備以特定空間包圍之密封罐的封裝構造。 此外，本發明之第3實施形態之有機半導體發光裝置 ，有機薄膜電晶體部分，P型有機半導體層400之HOMO之 能階絕對値應大於帽蓋用導電體層60之工作函數的絕對値 〇 以η型有機半導體層取代p型有機半導體層400時，η型 -37- 200926475 有機半導體層之LUMO之能階絕對値應小於導電體層之工 作函數絕對値。 電洞傳輸層411、421 ' 431可以使用例如α -NPD。 電子傳輸層412、422、4 32可以由例如Alq3等所形成 〇 導電體層60可以由例如Mg、Ag、Al、Ca、Li、Cs、 ‘ Ni、Ti等之金屬材料、由LiF/Al所構成之金屬層狀構造、 Q ΙΤΟ、ΙΖΟ等之無機導電體材料、PEDOT等之有機導電體 材料所形成。 Ρ型有機半導體層400與導電體層60之間，可以藉由以 電洞傳輸層411、421、431、發光層412、422、432、及電 子傳輸層413、423、433之層狀構造所構成之pri二極體， 來防止源極電極1 6與汲極電極1 8間之短路。亦即，藉由上 述ρη二極體，可防止載體之逆流，原理上，不會介由導電 _ 體層60發生源極·汲極間之短路。當做ρ型電晶體，而對 〇 源極·汲極間施加偏電壓時，導電體層60及汲極電極（180 、22)間，因爲電場方向爲相當於ρη接合之逆向偏壓，不 會介由導電體層60而於源極電極（160、20)與汲極電極 (180、22)間發生短路。 同樣地，對源極·汲極間施加偏電壓時，帽蓋用之導 電體層60與源極電極（160、20)間，因爲係相當於ρη接合 之順向偏壓，帽蓋用之導電體層60，藉由從源極電極（基 準電位）朝ρη接合之順向電壓下降（Vf)份之電位差而處於 安定。此外，ρ型有機半導體層（電晶體活性層）400內部之 -38- 200926475 電位’藉由帽蓋用導電體層60之電磁屏蔽效果而安定化。 本發明之第3實施形態之有機半導體發光裝置之構造 時，各電極、各層係分別以濺鍍、蒸鍍、塗佈等來進行成 膜。 基板10之材料可以使用與第1至第2實施形態相同之材 料。 - 閘極電極120之材料亦可以使用與第1至第2實施形態 Q 相同之材料。 閘極絕緣膜15之材料亦可以使用與第1至第2實施形態 相同之材料。 源極電極（160、20)及汲極電極（180、22)之材料可以 使用與第2實施形態相同之材料。 P型有機半導體層（電晶體活性層）400，例如，亦可以 ' a-Si、聚矽等之無機半導體材料等置換形成。 〇 (P型有機半導體材料） 第6圖至第7圖之p型有機半導體材料之分子構造例， 係與本發明之第3實施形態之有機半導體發光裝置相同。 (形成電洞傳輸層之電洞傳輸材料） 第8圖至第9圖所示之電洞傳輸材料之分子構造例’係 與本發明之第3實施形態之有機半導體發光裝置相同° (形成電子傳輸層之電子傳輸材料） -39- 200926475 第10圖至第11圖所示之電子傳輸材料之分子構造例係 與本發明之第3實施形態之有機半導體發光裝置相同。 (載體傳輸性發光材料、或發光摻雜物及宿主材料） 發光層312、322、332、412、422、432，係與本發明 之第1至第2實施形態之有機半導體發光裝置之載體傳輸性 - 發光材料、或發光摻雜物及宿主材料相同之材料。 ❹ 此外，本發明之第3實施形態之半導體發光裝置，如 第3圖所示，有機半導體發光元件部分，係以底部發射型 做爲構成例，然而，亦可爲頂部發射型或雙方發射型之構 成。 依據本發明之第3實施形態，係將有機薄膜電晶體及 面發光型有機半導體發光元件集成化於同一基板上之有機 ' 半導體發光裝置，可提供從源極/汲極電極之電洞注入能 力較高，將高介電常數之絕緣膜當做有機薄膜電晶體之閘 〇 極絕緣膜使用，表面改質容易，有機半導體材料之定向控 制亦良好，可提高有機薄膜電晶體之特性（低電壓驅動、 高驅動電流），而且，保持有機薄膜電晶體及面發光型有 機半導體發光元件之平坦性，適合提高發光特性及良率之 集成化的有機半導體發光裝置。 本發明之第3實施形態之有機半導體發光裝置，係提 供可改善面發光型有機半導體發光元件之亮度誤差、發光 波長之誤差所導致之亮點/色斑等之發光特性，抑制良率 之降低，因爲面發光型有機半導體發光元件及有機薄膜電 -40- 200926475 晶體可多層化，而大幅提高發光效率。 [第4實施形態] 第4圖係本發明之第4實施形態之有機半導體發光裝置 ，係於底部接觸型之有機薄膜電晶體之週邊部實施有機半 導體發光元件之集成化的槪念剖面構造圖。 - 因爲有機薄膜電晶體係以有機半導體發光元件之驅動 ❹ 器用電晶體來構成，爲了實現低電壓驅動且高亮度發光， 必須增大有機薄膜電晶體之開態電流。本發明之第4實施 形態之有機半導體發光裝置，係藉由利用層積閘極絕緣膜 之高開態電流及源極/汲極電極採用第4圖所示之有機薄膜 電晶體之構造，而進一步實現高驅動電流。 本發明之第4實施形態之有機半導體發光裝置之構造 ' ，如第4圖所示，具備：基板10;配置於基板10上之閘極 電極120 ;配置於閘極電極120上之閘極絕緣膜15 ;配置於 Q 閘極絕緣膜15上之閘極絕緣膜170;隔離配置於閘極絕緣 膜170上之金屬層160、180;配置於金屬層160、180上之 金屬層20、22;由配置於金屬層20、22上之金屬層260、 280之層狀構造所構成之源極電極（160、20、260)及汲極 電極（180、22、280);配置於源極電極（160、20、260)及 汲極電極（180、22、280)間之閘極絕緣膜170上之有機半 導體層400;配置於有機半導體層400上之電洞傳輸層411 :配置於電洞傳輸層411上之發光層412;配置於發光層 412上之電子傳輸層413;配置於電子傳輸層413上之電洞 -41 - 200926475 傳輸層42 1 ;配置於電洞傳輸層42 1上之發光層42 2;配置 於發光層422上之電子傳輸層423;配置於電子傳輸層423 上之電洞傳輸層43 1 ;配置於電洞傳輸層431上之發光層 432:配置於發光層432上之電子傳輸層433;以及配置於 電子傳輸層433上之導電體層60;且，具備金屬層160、 180及金屬層260、280之工作函數大於金屬層20、22之工 - 作函數的有機薄膜電晶體。 @ 此外，於有機薄膜電晶體之週邊部，更具備由：配置 於基板10上之陽極電極30;配置於陽極電極30上之電洞傳 輸層311;配置於電洞傳輸層311上之發光層312;配置於 發光層312上之電子傳輸層313;配置於電子傳輸層313上 之電洞傳輸層321;配置於電洞傳輸層321上之發光層322 ;配置於發光層3 22上之電子傳輸層323;配置於電子傳輸 ' 層323上之電洞傳輸層331;配置於電洞傳輸層331上之發 • 光層332;配置於發光層332上之電子傳輸層333;配置於 〇 電子傳輸層333上之陰極電極40 ;之層狀構造所構成之有 機半導體發光元件。 配載著有機半導體發光元件之基板10的背面，亦可配 置濾色器50。 此外，金屬層20、22係由金（Au)電極所形成，金屬層 160、180及金屬層260、280係由工作函數大於金電極之金 屬氧化物所形成。 此外，金屬層160、1 80及金屬層260、280係由鉬氧化 物（ΜοΟχ)層所形成 -42- 200926475 例如’鉬氧化物（M〇Ox)層之膜厚爲約lnrn〜5nm程度 ’最好爲約1.2nm〜4nm程度。此外，金（Au)電極之膜厚 爲例如約20nm〜200nm程度，最好爲約80nm。 或者，金屬層160、180亦可以由鉬氧化物（Mo Ox)層、 及例如厚度爲約0.5nm程度之極薄之鉻（Cr)層之混合層所 形成。或者，金屬層160、180亦可以由鉻（Cr)層及鉬氧化 . 物（MoOx)層之層狀構造（Cr/MoOx)所形成。 φ M〇Ox層相較於Cr層，因爲工作函數較大，可提高有 機薄膜電晶體之電流驅動能力。然而，Mo(^層，相較於 Cr層’閘極絕緣膜之Si02膜、與源極/汲極電極之金層的 界面密貼性較低。其一例之MoOx(tnm)/Au(80nm)/ MoOx(tnm)層積型電極構造時，t = 2.5nm時，發射（liftoff) 處理中之源極/汲極電極不會發生剝離。試作後之帶測試 亦無源極/汲極電極之剝離。所以，t = 2.5 nm時，確保相對 ' 較充份之密貼性。另一方面，t=1.2nm時，發射處理中之 Q 源極/汲極電極未發生剝離，然而，試作後之帶測試，於 Si02/MoOx界面，可觀測到源極/汲極電極之剝離。此外， t = 5nm時，發射處理中，於Si〇2/MoOx界面，可觀測到源 極/汲極電極之剝離。其係因爲M〇〇x層之膜應力導致密貼 力大幅降低。 提高密貼性之方法’可以利用Cr層及\1〇0,層之共沉 積來形成Cr-MoOx密貼層。例如，可以形成Cr(33wt%)-MoOx(67wt%)之 2.5nm的 Cr-MoOx混合層。 或者，亦可以形成Cr層及厘〇0)£層之層狀構造的 -43- 200926475Compared with the Cr layer, the MoOx layer can improve the current driving capability of the organic thin film transistor because of the large work function. However, in the Mo layer, the interface between the SiO 2 film of the gate insulating film and the gold layer of the source/drain electrode is lower than that of the Cr layer. One example of MoOx(tnm)/Au (80 nm) In the case of the laminated electrode structure, the source/drain electrodes in the liftoff process are not peeled off at t = 2.5 nm. The tape test after the test is also the peeling of the passive/dip electrodes. When t = 2.5nm, ensure relatively sufficient adhesion. On the other hand, when t=1.2nni, the source/drain electrodes in the emission process are not issued -33- 200926475 raw stripping 'however' after the test With the tape test, the source/drain electrode can be peeled off at the Si〇2/MoOx interface. In addition, at t = 5 nm, the source/drain electrode is observed at the Si〇2/MoOx interface during the emission treatment. The peeling force is caused by the film stress of the MoOx layer, and the adhesion force is greatly reduced. The method of improving the adhesion can be formed by co-deposition of a Cr layer and a layer of Cr(MoOx). For example, Forming a 2.5 nm Cr-MoOx mixed layer of Cr (33 wt%)-• MoOx (67 wt%), or a Cr/MoOx layered structure of a Cr layer and a MoOx layer. For example, a layered structure of (Cr layer (2.5 nm)) may be formed. Further, the gate insulating film 15 is composed of an insulating film having a dielectric constant higher than that of the gate insulating film 170, and the gate insulating film 170 It is composed of a tantalum oxide film thinner than the gate insulating film 15, and has a laminated gate insulating film structure. In addition, the gate insulating film 15 can also be composed of a molybdenum oxide film. The 15 series is made of, for example, a 钽' oxide film having a thickness of 100 nm or less, and the gate insulating film 174 is made of a tantalum oxide film thinner than the gate insulating film 15 and, for example, about 20 nm or less, so that the entire layer has a layer. In addition, the structure of the organic semiconductor light-emitting device according to the third embodiment of the present invention includes a substrate 10 as shown in Fig. 3, and a thickness of the substrate 10 is a gate electrode 120 composed of an Al-Nd layer of about 1 nm; a gate insulating film 15 made of a giant oxide film (PVD-Ta205) having a thickness of about 10 Onm disposed on the gate electrode 120 a ruthenium oxide film (CVD-S) having a thickness of about 10 nm disposed on the gate insulating film 15 a gate insulating film 170 formed of i02); a metal layer 160, 180 composed of a layer of molybdenum oxide (M〇Ox) having a thickness of about 2.5 nm, which is disposed on the gate insulating film 170 from -34 to 200926475. And a source electrode (160, 20) and a drain electrode (180, 22) formed by a layered structure of metal layers 20 and 22 composed of a gold layer having a thickness of about 80 nm; and being disposed at the source electrode (160, 20) and a p-type organic semiconductor layer 400 having a thickness of about 50 nm formed of, for example, Pyl05(Me) on the gate insulating film 170 between the gate electrodes (180, 22); disposed on the organic semiconductor layer 400. a hole transport layer 411; a light-emitting layer 412 disposed on the hole transport layer 411: an electron transport layer 413 disposed on the light-emitting layer 41 2; a hole transport layer 421 disposed on the electron transport layer 413; a light-emitting layer 422 on the hole transport layer 421; an electron transport layer 423 disposed on the light-emitting layer 422; a hole transport layer 431 disposed on the electron transport layer 423; a light-emitting layer 432 disposed on the hole transport layer 431; An electron transport layer 433 on the light-emitting layer 432: and a conductor layer 60 disposed on the electron transport layer 433; Work function metal layer 160 and 180 is larger than the work function of the metal layers 20 and 22 • an organic thin film transistor. Further, in the peripheral portion of the organic thin film transistor, an anode electrode 30 made of, for example, ITO disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer 311 are disposed. a light-emitting layer 312 on the layer 311; an electron transport layer 313 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 321; An electron transport layer 323 on the layer 322: a hole transport layer 331 disposed on the electron transport layer 323; a light emitting layer 332 disposed on the hole transport layer 331; an electron transport layer 333 disposed on the light emitting layer 332; An organic semiconductor light-emitting element composed of a layered structure of a cathode electrode 40 composed of, for example, an Al/LiF layer-35-200926475 integrated electrode on the electron transport layer 333. Further, the hole transport layers 311 and 411 can be formed at the same time, and the hole transport layers 321 and 421 can be simultaneously formed, and the hole transport layers 331 and 431 can be simultaneously formed. Further, the electron transport layers 313 and 413 may be simultaneously formed, and the electron transport layers 323 and 423 may be simultaneously formed, and the electron φ transport layers 333 and 43 3 may be simultaneously formed. Further, the light-emitting layers 312 and 412 may be simultaneously formed, and the light-emitting layers 322 and 422 may be simultaneously formed, and the light-emitting layers 332 and 432 may be simultaneously formed. Further, in the layered structure of the above-described organic semiconductor light-emitting device, the organic electrode layer 400 of the layered structure of the organic thin film transistor may be the same between the anode electrode 30 and the hole transport layer 311, and the organic layer Semi-conducting • Body layer. The process of forming the organic semiconductor layer 400 in the formation of the organic semiconductor light-emitting device according to the third embodiment of the present invention is also the surface of the gate insulating film 170 composed of a tantalum oxide film (CVD-SiO 2 ). , Perform the following treatments for the purpose of surface cleaning. Namely, in the gas phase environment, a reverse sputtering treatment of Ar of about 6 Å of SeC was carried out, and then, a UV/03 treatment of about 2 minutes was carried out, and an HMDS treatment of about 15 minutes was carried out for the purpose of hydrophobization. In addition, Ar/02 electric paddle treatment can also be implemented. In addition, the gold (Au) layers 20, 22 used to form the source electrodes (160, 20) and the drain electrodes (180, 22) have a large operating function and are electrically charged to the organic-36-200926475 semiconductor layer 400. Hole injection is easier because the molybdenum oxide (M〇Ox) layers 160, 180 also have a relatively large work function, which can sufficiently ensure the amount of hole injection into the organic semiconductor layer 400 having a large work function. Further, when the bottom contact type organic semiconductor transistor is shown in Fig. 3, the contact resistance at the interface between the organic semiconductor layer 400 / the inorganic electrode (160, 180, 20, 22) is small. Therefore, in the organic semiconductor light-emitting device 0 of the third embodiment of the present invention, the drain current Id-drain voltage VD characteristic has a low on-resistance and a high on-state current. In other words, according to the organic semiconductor light-emitting device of the third embodiment of the present invention, the organic thin film transistor portion can be enlarged by the improvement effect of the source electrode (160, 20) and the drain electrode (180, 22). The amount of hole injection into the organic semiconductor layer 400 is reduced, and the contact resistance is lowered, and the on-resistance is reduced, the on-state current is increased, and the mutual conductance is increased. In addition, the final structure is omitted in Fig. 3, however, it is also possible to form a vaporized film, a tantalum oxide film, or a passivation film formed on the conductor layer 60 and the cathode electrode 40 by low temperature growth. These layered structures are formed. Alternatively, a film may be formed by passivation to form a laminated film of an inorganic film and an organic film. Further, it is also possible to have a package structure of a sealed can surrounded by a specific space. Further, in the organic semiconductor light-emitting device according to the third embodiment of the present invention, the organic thin film transistor portion and the HOMO of the P-type organic semiconductor layer 400 have an absolute energy level which is larger than the absolute value of the work function of the cap conductor layer 60. When the n-type organic semiconductor layer is substituted for the p-type organic semiconductor layer 400, the absolute order of the LUMO of the n-type-37-200926475 organic semiconductor layer should be smaller than the absolute value of the work function of the conductor layer. The hole transport layer 411, 421 '431 may use, for example, α-NPD. The electron transport layers 412, 422, and 4 32 may be formed of, for example, Alq3 or the like. The germanium conductor layer 60 may be composed of a metal material such as Mg, Ag, Al, Ca, Li, Cs, 'Ni, Ti, or the like, and composed of LiF/Al. The metal layer structure, the inorganic conductor material such as Q ΙΤΟ or ΙΖΟ, and the organic conductor material such as PEDOT. The germanium-type organic semiconductor layer 400 and the conductor layer 60 may be formed by a layered structure of the hole transport layers 411, 421, 431, the light-emitting layers 412, 422, and 432, and the electron transport layers 413, 423, and 433. The pri diode prevents short circuit between the source electrode 16 and the drain electrode 18. Namely, by the above ρη diode, the reverse flow of the carrier can be prevented, and in principle, the short circuit between the source and the drain is not caused by the conductive body layer 60. When a p-type transistor is applied and a bias voltage is applied between the source and the drain, between the conductor layer 60 and the drain electrode (180, 22), since the direction of the electric field is equivalent to the reverse bias of the ρη junction, it does not A short circuit occurs between the source electrode (160, 20) and the drain electrode (180, 22) by the conductor layer 60. Similarly, when a bias voltage is applied between the source and the drain, the cap layer for the conductor layer 60 and the source electrode (160, 20) is electrically conductive between the cap electrodes and the source electrode (160, 20). The bulk layer 60 is stabilized by a potential difference from the source electrode (reference potential) to the forward voltage drop (Vf) portion of the ρn junction. Further, the potential -38-200926475 inside the p-type organic semiconductor layer (electrolyte active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60. In the structure of the organic semiconductor light-emitting device according to the third embodiment of the present invention, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like. As the material of the substrate 10, the same materials as those of the first to second embodiments can be used. - The material of the gate electrode 120 may be the same as that of the first to second embodiments. The material of the gate insulating film 15 may be the same as those of the first to second embodiments. The material of the source electrode (160, 20) and the drain electrode (180, 22) can be the same as that of the second embodiment. The P-type organic semiconductor layer (electrolyte active layer) 400 may be formed by, for example, substitution of an inorganic semiconductor material such as a-Si or polyfluorene. 〇 (P-type organic semiconductor material) The molecular structure example of the p-type organic semiconductor material of Figs. 6 to 7 is the same as that of the organic semiconductor light-emitting device of the third embodiment of the present invention. (The hole transport material forming the hole transport layer) The molecular structure example of the hole transport material shown in Figs. 8 to 9 is the same as the organic semiconductor light-emitting device according to the third embodiment of the present invention. Electron Transport Material of Transport Layer) - 39 - 200926475 The molecular structure of the electron transport material shown in Figs. 10 to 11 is the same as that of the organic semiconductor light-emitting device according to the third embodiment of the present invention. (Carrier-transmitting luminescent material, luminescent dopant, and host material) The luminescent layers 312, 322, 332, 412, 422, and 432 are transported to the carrier of the organic semiconductor light-emitting device according to the first to second embodiments of the present invention. Sex - a luminescent material, or a material that is the same as the luminescent dopant and host material. Further, in the semiconductor light-emitting device according to the third embodiment of the present invention, as shown in FIG. 3, the organic semiconductor light-emitting device portion has a bottom emission type as a configuration example, but may be a top emission type or a double emission type. The composition. According to a third embodiment of the present invention, an organic 'semiconductor light-emitting device in which an organic thin film transistor and a surface-emitting organic semiconductor light-emitting device are integrated on the same substrate can provide a hole injection capability from a source/drain electrode. Higher, the high dielectric constant insulating film is used as the gate insulating film of the organic thin film transistor, the surface modification is easy, the orientation control of the organic semiconductor material is also good, and the characteristics of the organic thin film transistor can be improved (low voltage driving) In addition, the organic semiconductor light-emitting device of the organic thin film transistor and the surface-emitting organic semiconductor light-emitting device is improved in flatness, and is suitable for an integrated organic semiconductor light-emitting device having improved light-emitting characteristics and yield. In the organic semiconductor light-emitting device according to the third embodiment of the present invention, it is possible to improve the light-emitting characteristics such as brightness and color unevenness caused by the luminance error of the surface-emitting organic semiconductor light-emitting device and the error of the light-emitting wavelength, and to suppress the decrease in the yield. Since the surface-emitting organic semiconductor light-emitting element and the organic thin film electric-40-200926475 crystal can be multilayered, the luminous efficiency is greatly improved. [Fourth Embodiment] Fig. 4 is a view showing a structure of a commemorative cross-section of an organic semiconductor light-emitting device in a peripheral portion of a bottom-contact type organic thin film transistor in an organic semiconductor light-emitting device according to a fourth embodiment of the present invention. . - Since the organic thin film electro-crystal system is constituted by an organic semiconductor light-emitting element driven by a transistor, in order to realize low-voltage driving and high-brightness light emission, it is necessary to increase the on-state current of the organic thin film transistor. In the organic semiconductor light-emitting device according to the fourth embodiment of the present invention, the high-state current of the laminated gate insulating film and the source/drain electrode are constructed using the organic thin film transistor shown in FIG. Further achieve high drive current. As shown in FIG. 4, the structure of the organic semiconductor light-emitting device according to the fourth embodiment of the present invention includes a substrate 10, a gate electrode 120 disposed on the substrate 10, and a gate insulating layer disposed on the gate electrode 120. a film 15; a gate insulating film 170 disposed on the Q gate insulating film 15; a metal layer 160, 180 disposed on the gate insulating film 170; and metal layers 20, 22 disposed on the metal layers 160, 180; a source electrode (160, 20, 260) and a drain electrode (180, 22, 280) composed of a layered structure of metal layers 260 and 280 disposed on the metal layers 20 and 22; and a source electrode ( 160, 20, 260) and the organic semiconductor layer 400 on the gate insulating film 170 between the drain electrodes (180, 22, 280); the hole transport layer 411 disposed on the organic semiconductor layer 400: disposed in the hole transmission a light-emitting layer 412 on the layer 411; an electron transport layer 413 disposed on the light-emitting layer 412; a hole-41 - 200926475 transport layer 42 1 disposed on the electron transport layer 413; and a light-emitting layer disposed on the hole transport layer 42 1 a layer 42 2; an electron transport layer 423 disposed on the light emitting layer 422; and a hole transport layer 4 disposed on the electron transport layer 423 a light-emitting layer 432 disposed on the hole transport layer 431: an electron transport layer 433 disposed on the light-emitting layer 432; and a conductor layer 60 disposed on the electron transport layer 433; and having metal layers 160, 180 and The working function of the metal layers 260, 280 is greater than the work-function organic thin film transistor of the metal layers 20, 22. Further, in the peripheral portion of the organic thin film transistor, an anode electrode 30 disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a light-emitting layer disposed on the hole transport layer 311 are further provided. 312; an electron transport layer 313 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 321; and an electron disposed on the light-emitting layer 3 22 a transport layer 323; a hole transport layer 331 disposed on the electron transport layer 323; a light-emitting layer 332 disposed on the hole transport layer 331; an electron transport layer 333 disposed on the light-emitting layer 332; An organic semiconductor light-emitting element composed of a layered structure of a cathode electrode 40 on the transport layer 333. The color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light-emitting device is mounted. Further, the metal layers 20, 22 are formed of gold (Au) electrodes, and the metal layers 160, 180 and the metal layers 260, 280 are formed of a metal oxide having a larger work function than the gold electrode. In addition, the metal layers 160, 180 and the metal layers 260, 280 are formed of a layer of molybdenum oxide (-o), for example, the thickness of the layer of the molybdenum oxide (M?Ox) is about lnrn~5 nm. It is preferably about 1.2 nm to 4 nm. Further, the film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, preferably about 80 nm. Alternatively, the metal layers 160, 180 may be formed of a mixed layer of a molybdenum oxide (Mo Ox) layer and, for example, a very thin chromium (Cr) layer having a thickness of about 0.5 nm. Alternatively, the metal layers 160, 180 may be formed of a layered structure (Cr/MoOx) of a chromium (Cr) layer and a molybdenum oxide (MoOx) layer. Compared with the Cr layer, the φ M〇Ox layer can improve the current driving capability of the organic thin film transistor because of the large work function. However, Mo (^ layer, compared with the SiO2 film of the gate layer of the Cr layer) and the gold layer of the source/drain electrode have low interface adhesion. One example of MoOx(tnm)/Au (80nm) / MoOx (tnm) laminated electrode structure, when t = 2.5nm, the source/drain electrode in the liftoff process will not peel off. The test after the test is also passive pole / drain electrode Peeling. Therefore, when t = 2.5 nm, it is ensured that it is relatively 'sufficiently close. On the other hand, when t=1.2 nm, the Q source/drain electrode in the emission treatment is not peeled off. However, the test is performed. After the tape test, the source/drain electrode can be peeled off at the Si02/MoOx interface. In addition, at t = 5 nm, the source/drain can be observed at the Si〇2/MoOx interface during the emission process. The peeling of the electrode is caused by the film stress of the M〇〇x layer, which greatly reduces the adhesion. The method of improving the adhesion can be formed by Cr layer and \1〇0, co-deposition of the layer to form Cr-MoOx paste. For example, a 2.5 nm Cr-MoOx mixed layer of Cr (33 wt%)-MoOx (67 wt%) may be formed. Alternatively, a Cr layer and a layered structure of a layer of cyan and 0) layers may be formed. 200926475
Cr/MoOx密貼層。例如，可以形成（Cr層（0.5nm)/MoOx層 (2.5nm))之層狀構造。 此外，閘極絕緣膜1 5係由介電常數高於閘極絕緣膜 170之絕緣膜所構成，閘極絕緣膜170係由薄於閘極絕緣膜 15之矽氧化膜所構成，全體具有層積型閘極絕緣膜構造。 此外，閘極絕緣膜15亦可以由鉬氧化膜所構成。 ， 此外，閘極絕緣膜15係由例如厚度爲lOOnm以下之鉅 〇 氧化膜所構成，閘極絕緣膜170係由薄於閘極絕緣膜15之 例如約5nm以下之矽氧化膜所構成，而使全體具有層積型 閘極絕緣膜構造。 此外，具體而言，本發明之第4實施形態之有機半導 體發光裝置之構造，如第4圖所示，具備：基板10;配置 於基板10上之厚度爲約lOOnm之由Al-Nd層所構成的閘極 電極120;配置於閘極電極上20上之厚度爲約lOOnm之由 鉬氧化膜（PVD-Ta205)所構成之閘極絕緣膜15;配置於閘 〇 極絕緣膜15上之厚度爲約5nm之由矽氧化膜（CVD-Si02)所 構成之閘極絕緣膜170;隔離配置於閘極絕緣膜170上之厚 度爲約2.5nm之由鉬氧化物（MoOx)層所構成之金屬層160、 180;配置於金屬層160、180上之厚度爲約80nm之由金層 所構成之金屬層20、22;配置於金屬層20、22上之厚度爲 約2.5nm之由鉬氧化物（M〇Ox)層所構成之金屬層260、280 之層狀構造所構成之源極電極（160、20、260)及汲極電極 (180、22、280);配置於源極電極（160、20、260)與汲極 電極（180、22、280)間之閘極絕緣膜170上，例如由 -44- 200926475Cr/MoOx adhesion layer. For example, a layered structure of (Cr layer (0.5 nm) / MoOx layer (2.5 nm)) can be formed. Further, the gate insulating film 15 is composed of an insulating film having a dielectric constant higher than that of the gate insulating film 170, and the gate insulating film 170 is composed of a tantalum oxide film thinner than the gate insulating film 15, and the entire layer is formed. Integral gate insulating film construction. Further, the gate insulating film 15 may be composed of a molybdenum oxide film. Further, the gate insulating film 15 is made of, for example, a giant tantalum oxide film having a thickness of 100 nm or less, and the gate insulating film 170 is made of a tantalum oxide film thinner than the gate insulating film 15 of, for example, about 5 nm or less. The entire structure has a laminated gate insulating film. Specifically, the structure of the organic semiconductor light-emitting device according to the fourth embodiment of the present invention includes a substrate 10 as shown in Fig. 4, and an Al-Nd layer having a thickness of about 100 nm disposed on the substrate 10. a gate electrode 120; a gate insulating film 15 made of a molybdenum oxide film (PVD-Ta205) having a thickness of about 100 nm disposed on the gate electrode 20; and a thickness disposed on the gate pad insulating film 15. a gate insulating film 170 made of a tantalum oxide film (CVD-SiO 2 ) of about 5 nm; a metal consisting of a molybdenum oxide (MoOx) layer having a thickness of about 2.5 nm disposed on the gate insulating film 170 The layers 160 and 180; the metal layers 20 and 22 formed of the gold layer having a thickness of about 80 nm disposed on the metal layers 160 and 180; and the molybdenum oxide having a thickness of about 2.5 nm disposed on the metal layers 20 and 22 a source electrode (160, 20, 260) and a drain electrode (180, 22, 280) formed by a layered structure of metal layers 260 and 280 formed of a (M〇Ox) layer; and a source electrode (160) , 20, 260) and the gate insulating film 170 between the gate electrodes (180, 22, 280), for example, by -44-200926475
Pyl05(Me)所構成之厚度爲約50nm之p型有機半導體層400 ;配置於有機半導體層400上之電洞傳輸層411;配置於電 洞傳輸層411上之發光層412;配置於發光層412上之電子 傳輸層413;配置於電子傳輸層413上之電洞傳輸層421; 配置於電洞傳輸層421上之發光層422;配置於發光層422 上之電子傳輸層42 3;配置於電子傳輸層423上之電洞傳輸 - 層431;配置於電洞傳輸層43 1上之發光層432;配置於發 Q 光層432上之電子傳輸層433;以及配置於電子傳輸層433 上之由例如Al/LiF層積電極所構成之導電體層60;且’具 備金屬層160、180及金屬層260、280之工作函數大於金屬 層20、22之工作函數的有機薄膜電晶體。 此外，於有機薄膜電晶體之週邊部，更具備由：配置 於基板10上之由例如ITO所構成之陽極電極30 ;配置於陽 極電極30上之電洞傳輸層311;配置於電洞傳輸層311上之 ' 發光層312;配置於發光層312上之電子傳輸層313;配置 〇 於電子傳輸層313上之電洞傳輸層321 ;配置於電洞傳輸層 321上之發光層322;配置於發光層322上之電子傳輸層323 :配置於電子傳輸層323上之電洞傳輸層331:配置於電洞 傳輸層331上之發光層332;配置於發光層332上之電子傳 輸層333;配置於電子傳輸層333上，例如，由Alm/LiF層 積電極所構成之陰極電極40;之層狀構造所構成之有機半 導體發光元件。 此外，可同時形成電洞傳輸層3 1 1及4 1 1，此外，亦可 同時形成電洞傳輸層321及421，此外，亦可同時形成電洞 -45- 200926475 傳輸層3 3 1及4 3 1。 此外，可同時形成電子傳輸層313及413，此外，亦可 同時形成電子傳輸層323及423，此外，亦可同時形成電子 傳輸層333及433。 此外，可同時形成發光層312及412，此外，亦可同時 形成發光層322及422，此外，亦可同時形成發光層332及 - 432 ° 〇 此外，上述之有機半導體發光元件之層狀構造時，於 陽極電極30與電洞傳輸層311之間，亦可與有機薄膜電晶 體之層狀構造之有機半導體層400相同，介在著有機半導 體層。 本發明之第4實施形態之有機半導體發光裝置之形成 工程之以形成有機半導體層4 00爲目的之前處理，也是對 由矽氧化膜（CVD-Si02)所構成之閘極絕緣膜170之表面， ' 執行以表面清淨化爲目的之以下之處理。亦即，在氣相環 〇 境中，實施約6〇SeC之Ar之逆濺鍍處理，其次，實施約2分 之UV/03處理，此外，以疏水化爲目的而實施約15分之 HMDS處理。此外，亦可實施Ar/02電漿處理。 此外，用以形成源極電極（160、20)及汲極電極（180 、22)之金層20、22，因爲其工作函數較大，對有機半導 體層400之電洞注入較爲容易，因爲鉬氧化物（MoOx)層160 、180亦具有相對較大之工作函數，可充份確保對工作函 數較大之有機半導體層40 0之電洞注入量。 此外，如第4圖所示之底部接觸型之有機半導體電晶 -46- 200926475 體時，有機半導體層400/無機電極（160、180、20、22)界 面之接觸電阻較小。 所以，本發明之第4實施形態之有機半導體發光裝置 之汲極電流ID-汲極電壓VD特性，可得到接通電阻較低、 開態電流較高的結果。 亦即，依據本發明之第4實施形態之有機半導體發光 • 裝置，有機薄膜電晶體部分，藉由源極電極（160、20、 ^ 260)及汲極電極（180、22、280)構造之改善效果，可增大 對有機半導體層4 0 0之電洞注入量、降低接觸電阻，而且 ，可實現接通電阻之低減化、開態電流之增大化、互導之 增大化。 此外，最終之構造，第4圖中省略了圖示，然而，亦 可以於導電體層60及陰極電極40上，藉由以低温生長所形 成之窒化膜及矽氧化膜、或鈍化膜來形成該等層狀構造。 ' 或者，亦可以鈍化膜來形成無機膜及有機膜之層積膜。此 Q 外，亦可具備以特定空間包圍之密封罐的封裝構造。 此外，本發明之第4實施形態之有機半導體發光裝置 ，有機薄膜電晶體部分，P型有機半導體層400之HOMO之 能階絕對値應大於帽蓋用導電體層60之工作函數的絕對値 〇 以η型有機半導體層取代p型有機半導體層400時’ η型 有機半導體層之LUMO之能階絕對値應小於導電體層之工 作函數絕對値。 電洞傳輸層411、42 1、431可以使用例如a -NPD。 -47- 200926475 電子傳輸層412、422、432可以由例如Alq3等所形成 〇 導電體層60可以由例如Mg、Ag、Al、Ca、Li、Cs、 Ni、Ti等之金屬材料、由LiF/Al所構成之金屬層狀構造、 ITO、IZO等之無機導電體材料、PEDOT等之有機導電體 材料所形成。 • P型有機半導體層400與導電體層60之間，可以藉由以 〇 電洞傳輸層411、421、431、發光層412、422、432、及電 子傳輸層413、42 3、433之層狀構造所構成之pn二極體， 來防止源極電極（160、20、260)與汲極電極（180、22、 2 8 0)間之短路。亦即，藉由上述pn二極體，可防止載體之 逆流，原理上，不會介由導電體層6 0發生源極·汲極間之 短路。 當做P型電晶體，而對源極·汲極間施加偏電壓時， ' 導電體層60及汲極電極（180、22、2 80)間，因爲電場方向 Ο 爲相當於pn接合之逆向偏壓，不會介由導電體層60而於源 極電極（160、20、260)與汲極電極（180、22、280)間發生 短路。 同樣地，對源極·汲極間施加偏電壓時，帽蓋用之導 電體層60與源極電極（160、20、260)間，因爲係相當於pn 接合之順向偏壓，帽蓋用之導電體層60，藉由從源極電極 (基準電位）朝pn接合之順向電壓下降（Vf)份之電位差而處 於安定。此外，p型有機半導體層（電晶體活性層）400內部 之電位，藉由帽蓋用導電體層60之電磁屏蔽效果而安定化 -48- 200926475 本發明之第4實施形態之有機半導體發光裝置之構造 時’各電極、各層係分別以濺鍍、蒸鍍、塗佈等來進行成 膜。 基板10之材料可以使用與第1至第3實施形態相同之材 料。 • 閘極電極120之材料亦可以使用與第1至第3實施形態 〇 相同之材料。 閘極絕緣膜15之材料亦可以使用與第1至第3實施形態 相同之材料。 源極電極（160、20、260)及汲極電極（180、22、280) 之材料亦可以使用與第3實施形態相同之材料。 p型有機半導體層（電晶體活性層）400，例如，亦可以 a-Si、聚矽等之無機半導體材料等置換形成。 O (P型有機半導體材料） 第6圖至第7圖所示之p型有機半導體材料之分子構造 例，係與本發明之第4實施形態之有機半導體發光裝置相 同。 (形成電洞傳輸層之電洞傳輸材料） 第8圖至第9圖所示之電洞傳輸材料之分子構造例’係 與本發明之第4實施形態之有機半導體發光裝置相同。 -49- 200926475 (形成電子傳輸層之電子傳輸材料） 第10圖至第11圖所示之電子傳輸材料之分子構造例’ 係與本發明之第4實施形態之有機半導體發光裝置相同。 (載體傳輸性發光材料、或發光摻雜物及宿主材料） 發光層312、322、332、412、422、432，係與本發明 * 之第1至第3實施形態之有機半導體發光裝置之載體傳輸性 φ 發光材料、或發光摻雜物及宿主材料相同之材料。 此外，本發明之第4實施形態之半導體發光裝置，如 第4圖所示，有機半導體發光元件部分，係以底部發射型 做爲構成例，然而，亦可爲頂部發射型或雙方發射型之構 成。 依據本發明之第4實施形態，係將有機薄膜電晶體及 面發光型有機半導體發光元件集成化於同一基板上之有機 半導體發光裝置，可提供從源極/汲極電極之電洞注入能 〇 力較高，將高介電常數之絕緣膜當做有機薄膜電晶體之閘 極絕緣膜使用，表面改質容易，有機半導體材料之定向控 制亦良好，可提高有機薄膜電晶體之特性（低電壓驅動、 高驅動電流），而且，保持有機薄膜電晶體及面發光型有 機半導體發光元件之平坦性，適合提高發光特性及良率之 集成化的有機半導體發光裝置。 本發明之第4實施形態之有機半導體發光裝置，係提 供可改善面發光型有機半導體發光元件之亮度誤差、發光 波長之誤差所導致之亮點/色斑等之發光特性，抑制良率 -50- 200926475 之降低，因爲面發光型有機半導體發光元件及有機薄膜電 晶體可多層化，而大幅提筒發光效率。 [第5實施形態] 第5圖係本發明之第5實施形態之有機半導體發光裝置 ’係於頂部接觸型之有機半導體發光裝置之週邊部實施有 * 機半導體發光元件之集成化的槪念剖面構造圖。 ❹ 本發明之第5實施形態之有機半導體發光裝置，如第5 圖所示，係具有集成化形成著頂部接觸型構造之有機薄膜 電晶體、及有機半導體發光元件的構成。 因爲有機薄膜電晶體係以有機半導體發光元件之驅動 器用電晶體來構成，爲了實現低電壓驅動且高亮度發光， 必須增大有機薄膜電晶體之開態電流。本發明之第5實施 形態之有機半導體發光裝置，係藉由利用層積閘極絕緣膜 ' 之高開態電流及第5圖所示之有機薄膜電晶體之構造，而 〇 進一步實現高驅動電流。 本發明之第5實施形態之有機半導體發光裝置’如第5 圖所示，係具備：基板1 0 ;配置於基板1 0上之閘極電極 120 ;配置於閘極電極120上之閘極絕緣膜15 ;配置於閘極 絕緣膜15上之閘極絕緣膜170 ;配置於閘極絕緣膜170上之 有機半導體層400:隔離配置於有機半導體層4〇〇上之金屬 層160、180;配置於金屬層160、180上之金屬層20、22; 由配置於金屬層20、22上之金屬層260、280之層狀構造所 構成之源極電極（160、20、260)及汲極電極（180、22、 -51 - 200926475 280);配置於有機半導體層400上及源極電極（160、20、 260)及汲極電極（180、22、280)上之電洞傳輸層411 ;配 置於電洞傳輸層411上之發光層412;配置於發光層412上 之電子傳輸層413;配置於電子傳輸層413上之電洞傳輸層 42 1;配置於電洞傳輸層42 1上之發光層42 2;配置於發光 層422上之電子傳輸層423;配置於電子傳輸層423上之電 • 洞傳輸層431 ;配置於電洞傳輸層431上之發光層432;配 0 置於發光層432上之電子傳輸層43 3;以及配置於電子傳輸 層433上之導電體層60;且，具備金屬層160、180及金屬 層260、280之工作函數大於金屬層20、22之工作函數的有 機薄膜電晶體。 此外，於有機薄膜電晶體之週邊部’更具備由：配置 於基板10上之陽極電極30;配置於陽極電極30上之電洞傳 輸層311 ;配置於電洞傳輸層311上之發光層312;配置於 ' 發光層312上之電子傳輸層313;配置於電子傳輸層313上 〇 之電洞傳輸層321 ;配置於電洞傳輸層321上之發光層322 ;配置於發光層3 22上之電子傳輸層323;配置於電子傳輸 層323上之電洞傳輸層331 ;配置於電洞傳輸層331上之發 光層332;配置於發光層332上之電子傳輸層333;以及配 置於電子傳輸層333上之陰極電極40;之層狀構造所構成 之有機半導體發光元件。 配載著有機半導體發光元件之基板10的背面’亦可配 置濾色器50。 此外，金屬層20、22係由金（Au)電極所形成’金屬層 -52- 200926475 160、180及金屬層260、280係由工作函數大於金電極之金 屬氧化物所形成。 此外，金屬層160、180及金屬層260、2 80係由鉬氧化 物（M〇Ox)層所形成。 例如，鉬氧化物（MoOx)層之膜厚爲約lnm〜5nm程度 ，最好爲約l_2nm〜4nm程度。此外，金（Au)電極之膜厚 - 爲例如約20nm〜200nm程度，最好爲約80nm。 ® 或者，金屬層160、180亦可以由鉬氧化物（MoOx)層、 及例如厚度爲約0.5nm程度之極薄之鉻（Cr)層之混合層所 形成。或者，金屬層160、180亦可以由鉻（Cr)層及鉬氧化 物（M〇Ox)層之層狀構造（Cr/MoOx)所形成。 \1〇0)(層相較於Cr層，因爲工作函數較大，可提高有 機薄膜電晶體之電流驅動能力。然而，M〇Ox層，相較於 Cr層，閘極絕緣膜之Si02膜、與源極/汲極電極之金層的 界面密貼性較低。其一例之MoOx(tnm/Au(80nm) Q /MoOx(tnm)層積型電極構造時，t = 2.5nm時，發射處理中 之源極/汲極電極不會發生剝離。試作後之帶測試亦無源 極/汲極電極之剝離。所以’ t = 2.5nm時，確保相對較充份 之密貼性。另一方面，t=1.2nm時，發射處理中之源極/汲 極電極未發生剝離，然而’試作後之帶測試’於Si〇2/ MoOx界面，可觀測到源極/汲極電極之剝離。此外， t = 5nm時，發射處理中，於Si02/MoOx界面，可觀測到源 極/汲極電極之剝離。其係因爲Mo Ox層之膜應力導致密貼 力大幅降低。 -53- 200926475 提高密貼性之方法’可以利用C r層及μ Ο 〇 χ層之共沉 積來形成Cr-MoOx密貼層。例如，可以形成Cr(33wt%)-MoOx(67wt%)之 2.5nm的（：1'-\1〇0!{混合層。 或者’亦可以形成Cr層及M〇Ox層之層狀構造的 Cr/MoOx括貼層。例如，形成Cr層（0.5nm)/MoOx層 (2.5nm))之層狀構造。 - 此外’閘極絕緣膜1 5係由介電常數高於閘極絕緣膜 〇 1 70之絕緣膜所構成’閘極絕緣膜i 70係由薄於閘極絕緣膜 15之矽氧化膜所構成’全體具有層積型閘極絕緣膜構造。 此外，閘極絕緣膜1 5亦可以由钽氧化膜所構成。 此外，閘極絕緣膜1 5係由例如厚度爲1 〇〇nm以下之钽 氧化膜所構成，閘極絕緣膜170係由薄於閘極絕緣膜15之 例如約5nm以下之矽氧化膜所構成，而使全體具有層積型 閘極絕緣膜構造。 ' 此外，具體而言，本發明之第5實施形態之有機半導 〇 體發光裝置之構造，如第5圖所示，係具備：基板1 0 ;配 置於基板1〇上之厚度爲約l〇〇nm之由Al-Nd層所構成的閘 極電極120;配置於閘極電極120上之厚度爲約1〇〇 nm之由 鉬氧化膜（PVD-Ta205)所構成之閘極絕緣膜15 ;配置於閘 極絕緣膜15上之厚度爲約10nm之由矽氧化膜（CVD-Si02) 所構成之閘極絕緣膜170 ;配置於閘極絕緣膜17〇上之例如 由Pyl05(Me)所構成之厚度爲約50nm之p型有機半導體層 40 0;隔離配置於p型有機半導體層400上之厚度爲約2.5 nm 之由鉬氧化物（M〇Ox)層所構成之金屬層160、180;配置於 -54- 200926475 金屬層160、180膜17上之厚度爲約80nm之由金層所構成 之金屬層20、22;配置於金屬層20、22上之厚度爲約 2.5nm之由鉬氧化物（M〇Ox)層所構成之金屬層260、280之 層狀構造所構成之源極電極（160、20、260)及汲極電極 (180、22、28 0);配置於有機半導體層400上及源極電極 (160、20、260)及汲極電極（180、22、280)上之電洞傳輸 • 層411 ;配置於電洞傳輸層411上之發光層412;配置於發 Θ 光層412上之電子傳輸層413;配置於電子傳輸層413上之 電洞傳輸層421 ;配置於電洞傳輸層421上之發光層422; 配置於發光層422上之電子傳輸層423 ;配置於電子傳輸層 423上之電洞傳輸層431 ;配置於電洞傳輸層431上之發光 層432;配置於發光層432上之電子傳輸層433;以及配置 於電子傳輸層43 3上之導電體層60;且，具備金屬層160、 180及金屬層260、280之工作函數大於金屬層20、22之工 ' 作函數的有機薄膜電晶體。 〇 此外，於有機薄膜電晶體之週邊部，更具備由：配置 於基板10上之由例如ITO所構成之陽極電極30;配置於陽 極電極30上之電洞傳輸層311;配置於電洞傳輸層311上之 發光層312;配置於發光層312上之電子傳輸層313;配置 於電子傳輸層313上之電洞傳輸層321;配置於電洞傳輸層 321上之發光層322;配置於發光層322上之電子傳輸層323 ;配置於電子傳輸層323上之電洞傳輸層331 ;配置於電洞 傳輸層331上之發光層332;配置於發光層332上之電子傳 輸層333;配置於電子傳輸層333上之由例如Al/LiF層積電 -55- 200926475 極所構成之陰極電極40;之層狀構造所構成之有機半導體 發光元件。 此外，可同時形成電洞傳輸層311及411，此外，亦可 同時形成電洞傳輸層321及42 1，此外，亦可同時形成電洞 傳輸層331及431。 此外，可同時形成電子傳輸層313及413，此外，亦可 * 同時形成電子傳輸層323及42 3，此外，亦可同時形成電子 ❹ 傳輸層3 33及43 3。 此外，可同時形成發光層312及412，此外，亦可同時 形成發光層322及422，此外，亦可同時形成發光層3 3 2及 432 ° 此外，上述之有機半導體發光元件之層狀構造時，於 陽極電極30與電洞傳輸層31 1之間，亦可與有機薄膜電晶 體之層狀構造之有機半導體層400相同，介在著有機半導 • 體層。 ❹ 本發明之第5實施形態之有機半導體發光裝置之形成 工程之以形成有機半導體層400爲目的之前處理，也是對 由矽氧化膜（CVD-Si02)所構成之閘極絕緣膜170之表面， 執行以表面清淨化爲目的之以下之處理。亦即，在氣相環 境中，實施約60sec之Ar之逆濺鍍處理，其次，實施約2分 之UV/03處理，此外，以疏水化爲目的而實施約15分之 HMDS處理。此外，亦可實施Ar/02電漿處理。 此外，用以形成源極電極（160、20、260)及汲極電極 (180、22、280)之金層20、22，因爲其工作函數較大，對 -56- 200926475 有機半導體層400之電洞注入較爲容易，然而，因爲鉬氧 化物（MoOx)層160、180、260、280也具有相對較大之工作 函數，可充份確保對工作函數較大之有機半導體層400之 電洞注入量。 此外，如第5圖所示之頂部接觸型之有機半導體電晶 體時，有機半導體層400/無機電極（160、180、20、22、 ' 260、280)界面之接觸電阻較小。 © 所以，本發明之第5實施形態之有機半導體發光裝置 之汲極電流Id-汲極電壓VD特性，可得到接通電阻較低、 開態電流較高的結果。 亦即，依據本發明之第5實施形態之有機半導體發光 裝置，有機薄膜電晶體部分，藉由源極電極（160、20、 260)及汲極電極（180、22、280)構造之改善效果，可增大 對有機半導體層400之電洞注入量、降低接觸電阻，而且 ' ，可實現接通電阻之低減化、開態電流之增大化、互導之 © 增大化。 此外’最終之構造，第5圖中省略了圖示，然而，亦 可以於導電體層60及陰極電極40上，藉由以低温生長所形 成之窒化膜及矽氧化膜、或鈍化膜來形成該等層狀構造。 或者，亦可以鈍化膜來形成無機膜及有機膜之層積膜。此 外，亦可具備以特定空間包圍之密封罐的封裝構造。 此外’本發明之第5實施形態之有機半導體發光裝置 ’有機薄膜電晶體部分，p型有機半導體層400之HOMO之 能階絕對値應大於帽蓋用導電體層60之工作函數的絕對値 -57- 200926475 以η型有機半導體層取代P型有機半導體層400時，n型 有機半導體層之LUMO之能階絕對値應小於導電體層之工 作函數絕對値。 電洞傳輸層41 1、421、43 1可以使用例如a -NPD。 電子傳輸層412、422、43 2可以由例如Alq3等所形成 * 〇 © 導電體層60可以由例如Mg、Ag、Al、Ca、Li、Cs、a p-type organic semiconductor layer 400 having a thickness of about 50 nm composed of Pyl05(Me); a hole transport layer 411 disposed on the organic semiconductor layer 400; a light-emitting layer 412 disposed on the hole transport layer 411; and being disposed on the light-emitting layer An electron transport layer 413 on the 412; a hole transport layer 421 disposed on the electron transport layer 413; a light-emitting layer 422 disposed on the hole transport layer 421; and an electron transport layer 42 3 disposed on the light-emitting layer 422; a hole transmission layer 431 on the electron transport layer 423; a light emitting layer 432 disposed on the hole transport layer 43 1; an electron transport layer 433 disposed on the Q-emitting layer 432; and an electron transport layer 433 disposed on the electron transport layer 433 The conductor layer 60 composed of, for example, an Al/LiF laminated electrode; and 'an organic thin film transistor having a metal layer 160, 180 and metal layers 260, 280 having a larger work function than the metal layers 20, 22. Further, the peripheral portion of the organic thin film transistor further includes an anode electrode 30 made of, for example, ITO disposed on the substrate 10, a hole transport layer 311 disposed on the anode electrode 30, and a hole transport layer disposed on the hole transport layer. a light-emitting layer 312 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 321; An electron transport layer 323 on the light-emitting layer 322: a hole transport layer 331 disposed on the electron transport layer 323: a light-emitting layer 332 disposed on the hole transport layer 331; an electron transport layer 333 disposed on the light-emitting layer 332; On the electron transport layer 333, for example, a cathode electrode 40 composed of an Alm/LiF laminated electrode; and an organic semiconductor light-emitting element composed of a layered structure. In addition, the hole transport layers 3 1 1 and 4 1 1 may be simultaneously formed, and the hole transport layers 321 and 421 may be simultaneously formed, and the holes -45-200926475 transport layers 3 3 1 and 4 may be simultaneously formed. 3 1. Further, the electron transport layers 313 and 413 can be simultaneously formed, and the electron transport layers 323 and 423 can be simultaneously formed, and the electron transport layers 333 and 433 can be simultaneously formed. Further, the light-emitting layers 312 and 412 may be simultaneously formed, and the light-emitting layers 322 and 422 may be simultaneously formed, and the light-emitting layers 332 and -432 may be simultaneously formed. Further, in the layered structure of the above-described organic semiconductor light-emitting device The organic electrode layer 400 may be interposed between the anode electrode 30 and the hole transport layer 311 in the same manner as the organic semiconductor layer 400 of the layered structure of the organic thin film transistor. The organic semiconductor light-emitting device according to the fourth embodiment of the present invention is formed for the purpose of forming the organic semiconductor layer 400, and is also a surface of the gate insulating film 170 made of a tantalum oxide film (CVD-SiO2). ' Perform the following treatments for the purpose of surface cleaning. In other words, in the gas phase environment, a reverse sputtering treatment of Ar of about 6 Å of SeC is carried out, and then, a UV/03 treatment of about 2 minutes is carried out, and HMDS of about 15 minutes is performed for the purpose of hydrophobization. deal with. In addition, Ar 02 plasma treatment can also be carried out. In addition, the gold layers 20, 22 for forming the source electrodes (160, 20) and the drain electrodes (180, 22) are easier to implant into the organic semiconductor layer 400 because of the larger work function because The molybdenum oxide (MoOx) layers 160, 180 also have a relatively large work function, which can sufficiently ensure the amount of hole injection into the organic semiconductor layer 40 0 having a large work function. Further, as in the case of the bottom contact type organic semiconductor transistor - 46 - 200926475 shown in Fig. 4, the contact resistance at the interface of the organic semiconductor layer 400 / the inorganic electrode (160, 180, 20, 22) is small. Therefore, the drain current ID-drain voltage VD characteristic of the organic semiconductor light-emitting device according to the fourth embodiment of the present invention has a low on-resistance and a high on-state current. In other words, in the organic semiconductor light-emitting device according to the fourth embodiment of the present invention, the organic thin film transistor portion is constructed by the source electrode (160, 20, ^ 260) and the drain electrode (180, 22, 280). By improving the effect, the amount of hole injection into the organic semiconductor layer 400 can be increased, and the contact resistance can be reduced. Further, the on-resistance can be reduced, the on-state current can be increased, and the mutual conductance can be increased. Further, although the final structure is omitted in FIG. 4, the conductive layer 60 and the cathode electrode 40 may be formed on the conductor layer 60 and the cathode electrode 40 by a vaporized film, a tantalum oxide film, or a passivation film formed by low-temperature growth. Equal layered structure. Alternatively, a film may be passivated to form a laminated film of an inorganic film and an organic film. In addition to this Q, it is also possible to have a package structure of a sealed can surrounded by a specific space. Further, in the organic semiconductor light-emitting device according to the fourth embodiment of the present invention, the HOMO of the organic thin film transistor portion and the P-type organic semiconductor layer 400 should be larger than the absolute value of the work function of the cap conductor layer 60. When the n-type organic semiconductor layer is substituted for the p-type organic semiconductor layer 400, the absolute order of the LUMO of the n-type organic semiconductor layer should be smaller than the absolute value of the working function of the conductor layer. The hole transport layers 411, 42 1 and 431 can use, for example, a-NPD. -47- 200926475 The electron transport layers 412, 422, 432 may be formed of, for example, Alq3 or the like. The germanium conductor layer 60 may be made of a metal material such as Mg, Ag, Al, Ca, Li, Cs, Ni, Ti, etc., by LiF/Al. The metal layer structure, the inorganic conductor material such as ITO or IZO, and the organic conductor material such as PEDOT are formed. • The P-type organic semiconductor layer 400 and the conductor layer 60 may be layered by the germanium hole transport layers 411, 421, 431, the light-emitting layers 412, 422, and 432, and the electron transport layers 413, 42 3, and 433. The pn diode is constructed to prevent short circuit between the source electrode (160, 20, 260) and the drain electrode (180, 22, 280). That is, the pn diode can prevent the reverse flow of the carrier, and in principle, a short circuit between the source and the drain is not caused by the conductor layer 60. When a P-type transistor is applied and a bias voltage is applied between the source and the drain, between the conductor layer 60 and the drain electrode (180, 22, 2 80), since the electric field direction Ο is equivalent to the reverse bias of the pn junction. Short circuit occurs between the source electrode (160, 20, 260) and the drain electrode (180, 22, 280) via the conductor layer 60. Similarly, when a bias voltage is applied between the source and the drain, the cap layer for the conductor layer 60 and the source electrode (160, 20, 260) is equivalent to the forward bias of the pn junction, and the cap is used. The conductor layer 60 is stabilized by a potential difference from the source electrode (reference potential) to the forward voltage drop (Vf) of the pn junction. Further, the potential inside the p-type organic semiconductor layer (electro-optic active layer) 400 is stabilized by the electromagnetic shielding effect of the cap conductor layer 60. -48-200926475 The organic semiconductor light-emitting device according to the fourth embodiment of the present invention At the time of construction, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like. As the material of the substrate 10, the same materials as those of the first to third embodiments can be used. • The material of the gate electrode 120 may be the same as those of the first to third embodiments. The material of the gate insulating film 15 can also be the same as those of the first to third embodiments. The material of the source electrode (160, 20, 260) and the drain electrode (180, 22, 280) may be the same as that of the third embodiment. The p-type organic semiconductor layer (electroactive layer) 400 may be formed by, for example, substitution of an inorganic semiconductor material such as a-Si or polyfluorene. O (P-type organic semiconductor material) The molecular structure of the p-type organic semiconductor material shown in Fig. 6 to Fig. 7 is the same as that of the organic semiconductor light-emitting device according to the fourth embodiment of the present invention. (Cell Transport Material Forming Hole Transport Layer) The molecular structure example of the hole transport material shown in Figs. 8 to 9 is the same as the organic semiconductor light-emitting device according to the fourth embodiment of the present invention. -49-200926475 (Electron-transmitting material forming an electron-transporting layer) The molecular structure example of the electron-transporting material shown in Figs. 10 to 11 is the same as the organic semiconductor light-emitting device of the fourth embodiment of the present invention. (Carrier-transmitting luminescent material, luminescent dopant, and host material) The luminescent layers 312, 322, 332, 412, 422, and 432 are the carriers of the organic semiconductor light-emitting device according to the first to third embodiments of the present invention*. Transmittance φ luminescent material, or luminescent dopant and host material the same material. Further, in the semiconductor light-emitting device according to the fourth embodiment of the present invention, as shown in FIG. 4, the organic semiconductor light-emitting device portion has a bottom emission type as a configuration example, but may be a top emission type or a two-emitting type. Composition. According to the fourth embodiment of the present invention, an organic semiconductor light-emitting device in which an organic thin film transistor and a surface-emitting organic semiconductor light-emitting device are integrated on the same substrate can provide a hole injection energy from a source/drain electrode. The force is high, and the high dielectric constant insulating film is used as the gate insulating film of the organic thin film transistor, the surface modification is easy, the orientation control of the organic semiconductor material is also good, and the characteristics of the organic thin film transistor can be improved (low voltage driving) In addition, the organic semiconductor light-emitting device of the organic thin film transistor and the surface-emitting organic semiconductor light-emitting device is improved in flatness, and is suitable for an integrated organic semiconductor light-emitting device having improved light-emitting characteristics and yield. In the organic semiconductor light-emitting device according to the fourth embodiment of the present invention, it is possible to improve the light-emitting characteristics such as bright spots/color spots caused by errors in luminance and light-emitting wavelength of the surface-emitting organic semiconductor light-emitting device, and to suppress the yield of -50- The decrease of 200926475 is because the surface-emitting organic semiconductor light-emitting element and the organic thin-film transistor can be multi-layered, and the luminous efficiency is greatly improved. [Fifth Embodiment] Fig. 5 is a view showing an organic semiconductor light-emitting device according to a fifth embodiment of the present invention, in which a semiconductor semiconductor light-emitting device is integrated in a peripheral portion of a top-contact type organic semiconductor light-emitting device. structure map. As shown in Fig. 5, the organic semiconductor light-emitting device according to the fifth embodiment of the present invention has an organic thin film transistor in which a top contact type structure is integrated and an organic semiconductor light-emitting element. Since the organic thin film electro-crystal system is constituted by a transistor for an organic semiconductor light-emitting element, in order to realize low-voltage driving and high-intensity light emission, it is necessary to increase the on-state current of the organic thin film transistor. The organic semiconductor light-emitting device according to the fifth embodiment of the present invention further realizes a high driving current by utilizing a structure of a high-state current of the laminated gate insulating film and an organic thin film transistor shown in FIG. . As shown in Fig. 5, the organic semiconductor light-emitting device according to the fifth embodiment of the present invention includes a substrate 10; a gate electrode 120 disposed on the substrate 10; and a gate insulating layer disposed on the gate electrode 120. a film 15; a gate insulating film 170 disposed on the gate insulating film 15; an organic semiconductor layer 400 disposed on the gate insulating film 170: a metal layer 160, 180 disposed on the organic semiconductor layer 4; Metal layers 20, 22 on metal layers 160, 180; source electrodes (160, 20, 260) and drain electrodes formed by a layered structure of metal layers 260, 280 disposed on metal layers 20, 22 (180, 22, -51 - 200926475 280); a hole transport layer 411 disposed on the organic semiconductor layer 400 and on the source electrodes (160, 20, 260) and the drain electrodes (180, 22, 280); a light-emitting layer 412 on the hole transport layer 411; an electron transport layer 413 disposed on the light-emitting layer 412; a hole transport layer 42 1 disposed on the electron transport layer 413; and a light-emitting layer disposed on the hole transport layer 42 1 a layer 42 2; an electron transport layer 423 disposed on the light emitting layer 422; and an electric hole transmission disposed on the electron transport layer 423 a layer 431; a light-emitting layer 432 disposed on the hole transport layer 431; an electron transport layer 43 3 disposed on the light-emitting layer 432; and a conductor layer 60 disposed on the electron transport layer 433; and a metal layer 160 The organic thin film transistor of the 180 and the metal layers 260, 280 having a larger working function than the metal layers 20, 22. Further, the peripheral portion of the organic thin film transistor further includes: an anode electrode 30 disposed on the substrate 10; a hole transport layer 311 disposed on the anode electrode 30; and a light-emitting layer 312 disposed on the hole transport layer 311. An electron transport layer 313 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 321; and disposed on the light-emitting layer 3 22 An electron transport layer 323; a hole transport layer 331 disposed on the electron transport layer 323; a light emitting layer 332 disposed on the hole transport layer 331; an electron transport layer 333 disposed on the light emitting layer 332; and an electron transport layer An organic semiconductor light-emitting element comprising a cathode structure 40 on 333; and a layered structure. The color filter 50 may be disposed on the back surface of the substrate 10 on which the organic semiconductor light-emitting device is mounted. Further, the metal layers 20, 22 are formed of gold (Au) electrodes. The metal layers - 52 - 200926475 160, 180 and the metal layers 260, 280 are formed of a metal oxide having a larger working function than the gold electrode. Further, the metal layers 160, 180 and the metal layers 260, 280 are formed of a layer of molybdenum oxide (M?Ox). For example, the film thickness of the molybdenum oxide (MoOx) layer is about 1 nm to 5 nm, preferably about 1 to 2 nm to 4 nm. Further, the film thickness of the gold (Au) electrode is, for example, about 20 nm to 200 nm, preferably about 80 nm. ® Alternatively, the metal layers 160, 180 may also be formed of a mixed layer of a molybdenum oxide (MoOx) layer and, for example, a very thin chromium (Cr) layer having a thickness of about 0.5 nm. Alternatively, the metal layers 160, 180 may be formed of a layered structure (Cr/MoOx) of a chromium (Cr) layer and a molybdenum oxide (M?Ox) layer. \1〇0) (The layer is higher than the Cr layer, because the working function is larger, the current driving ability of the organic thin film transistor can be improved. However, the M〇Ox layer, compared with the Cr layer, the SiO2 film of the gate insulating film The interface with the gold layer of the source/drain electrode has low adhesion. One example of MoOx (tnm/Au(80nm) Q /MoOx(tnm) laminated electrode structure, when t = 2.5nm, emits The source/drain electrodes in the process do not peel off. The tape test after the test is also the peeling of the passive/dip electrodes, so when 't = 2.5 nm, ensure a relatively sufficient adhesion. On the other hand, when t=1.2 nm, the source/drain electrodes in the emission treatment were not peeled off, but the tape test after the test was performed at the Si〇2/MoOx interface, and the peeling of the source/drain electrodes was observed. In addition, at t = 5 nm, in the emission process, the source/drain electrode can be observed at the SiO 2 /MoOx interface, which is caused by the film stress of the Mo Ox layer, which causes a significant decrease in the adhesion force. -53- 200926475 The method of adhesion can be formed by co-deposition of a C r layer and a μ Ο layer to form a Cr-MoOx adhesion layer. For example, Cr (33w) can be formed. t%)-MoOx (67wt%) of 2.5nm (:1'-\1〇0!{Mixed layer. Or 'Cr-MoOx with a layered structure of Cr layer and M〇Ox layer) For example, a layered structure of a Cr layer (0.5 nm)/MoOx layer (2.5 nm) is formed. - Further, the gate insulating film 15 is made of an insulating film having a dielectric constant higher than that of the gate insulating film 〇1 70. The gate insulating film i 70 is formed of a tantalum oxide film thinner than the gate insulating film 15 and has a laminated gate insulating film structure. In addition, the gate insulating film 15 can also be made of a tantalum oxide film. Further, the gate insulating film 15 is made of, for example, a tantalum oxide film having a thickness of 1 〇〇 nm or less, and the gate insulating film 170 is made of a tantalum oxide film thinner than the gate insulating film 15 of, for example, about 5 nm or less. In addition, the structure of the organic semiconductor light-emitting device of the fifth embodiment of the present invention is as shown in FIG. a substrate 10; a gate electrode 120 composed of an Al-Nd layer having a thickness of about 10 nm disposed on the substrate 1; a thickness disposed on the gate electrode 120 a gate insulating film 15 made of a molybdenum oxide film (PVD-Ta205) of about 1 nm, and a germanium oxide film (CVD-SiO 2 ) having a thickness of about 10 nm disposed on the gate insulating film 15 a gate insulating film 170; a p-type organic semiconductor layer 40 0 having a thickness of about 50 nm formed of, for example, Pyl05(Me) disposed on the gate insulating film 17?; a thickness disposed on the p-type organic semiconductor layer 400 a metal layer 160, 180 composed of a layer of molybdenum oxide (M〇Ox) of about 2.5 nm; a gold layer of about 80 nm thick on the metal layer 160, 180 film 17 of -54-200926475 Metal layers 20, 22; source electrodes formed of a layered structure of metal layers 260, 280 of a molybdenum oxide (M〇Ox) layer having a thickness of about 2.5 nm disposed on the metal layers 20, 22 ( 160, 20, 260) and a drain electrode (180, 22, 28 0); disposed on the organic semiconductor layer 400 and on the source electrode (160, 20, 260) and the drain electrode (180, 22, 280) a hole transmission layer 411; a light-emitting layer 412 disposed on the hole transport layer 411; an electron transport layer 413 disposed on the light-emitting layer 412; and disposed on the electron transport layer 413 a hole transport layer 421; a light-emitting layer 422 disposed on the hole transport layer 421; an electron transport layer 423 disposed on the light-emitting layer 422; a hole transport layer 431 disposed on the electron transport layer 423; a light-emitting layer 432 on the layer 431; an electron transport layer 433 disposed on the light-emitting layer 432; and a conductor layer 60 disposed on the electron transport layer 433; and having the metal layers 160, 180 and the metal layers 260, 280 The function is larger than the organic thin film transistor of the metal layer 20, 22. Further, the peripheral portion of the organic thin film transistor further includes an anode electrode 30 made of, for example, ITO disposed on the substrate 10; a hole transport layer 311 disposed on the anode electrode 30; and being disposed in the hole transport a light-emitting layer 312 on the layer 311; an electron transport layer 313 disposed on the light-emitting layer 312; a hole transport layer 321 disposed on the electron transport layer 313; a light-emitting layer 322 disposed on the hole transport layer 321; An electron transport layer 323 on the layer 322; a hole transport layer 331 disposed on the electron transport layer 323; a light-emitting layer 332 disposed on the hole transport layer 331; an electron transport layer 333 disposed on the light-emitting layer 332; An organic semiconductor light-emitting element composed of a layered structure of a cathode electrode 40 composed of, for example, an Al/LiF laminated electric-55-200926475 electrode on the electron transport layer 333. Further, the hole transport layers 311 and 411 can be formed at the same time, and the hole transport layers 321 and 42 1 can be simultaneously formed, and the hole transport layers 331 and 431 can be simultaneously formed. Further, the electron transport layers 313 and 413 may be simultaneously formed, and the electron transport layers 323 and 42 3 may be simultaneously formed, and the electron transport layers 3 33 and 43 3 may be simultaneously formed. Further, the light-emitting layers 312 and 412 may be simultaneously formed, and the light-emitting layers 322 and 422 may be simultaneously formed, and the light-emitting layers 3 3 2 and 432 may be simultaneously formed. Further, in the layered structure of the above-described organic semiconductor light-emitting device The anode electrode 30 and the hole transport layer 31 1 may be the same as the organic semiconductor layer 400 of the layered structure of the organic thin film transistor, and may be interposed in the organic semiconductor layer. The process of forming the organic semiconductor layer 400 for forming the organic semiconductor light-emitting device according to the fifth embodiment of the present invention is also the surface of the gate insulating film 170 made of a tantalum oxide film (CVD-SiO 2 ). The following treatments are performed for the purpose of surface cleaning. Namely, in the gas phase environment, a reverse sputtering treatment of Ar for about 60 sec was carried out, and then, a UV/03 treatment of about 2 minutes was carried out, and an HMDS treatment of about 15 minutes was carried out for the purpose of hydrophobization. In addition, Ar 02 plasma treatment can also be carried out. In addition, the gold layers 20, 22 for forming the source electrodes (160, 20, 260) and the drain electrodes (180, 22, 280) have a large working function, and the -56-200926475 organic semiconductor layer 400 Hole injection is relatively easy, however, since the molybdenum oxide (MoOx) layers 160, 180, 260, 280 also have a relatively large work function, the holes of the organic semiconductor layer 400 having a large work function can be sufficiently ensured. The amount injected. Further, when the top contact type organic semiconductor transistor is shown in Fig. 5, the contact resistance at the interface of the organic semiconductor layer 400/inorganic electrode (160, 180, 20, 22, '260, 280) is small. In the organic semiconductor light-emitting device according to the fifth embodiment of the present invention, the drain current Id-drain voltage VD characteristic is low, and the on-resistance is low and the on-state current is high. In other words, in the organic semiconductor light-emitting device according to the fifth embodiment of the present invention, the organic thin film transistor portion has an effect of improving the structure of the source electrode (160, 20, 260) and the drain electrode (180, 22, 280). In addition, the amount of hole injection into the organic semiconductor layer 400 can be increased, and the contact resistance can be reduced, and the reduction of the on-resistance, the increase of the on-state current, and the increase of the mutual conductance can be achieved. Further, the final structure is omitted in FIG. 5. However, the conductive layer 60 and the cathode electrode 40 may be formed on the conductor layer 60 and the cathode electrode 40 by a vaporized film, a tantalum oxide film, or a passivation film formed by low-temperature growth. Equal layered structure. Alternatively, a film may be formed by passivation to form a laminated film of an inorganic film and an organic film. Further, it is also possible to have a package structure of a sealed can surrounded by a specific space. Further, in the organic thin film transistor portion of the organic semiconductor light-emitting device of the fifth embodiment of the present invention, the absolute order of the HOMO of the p-type organic semiconductor layer 400 should be larger than the absolute value of the work function of the cap conductor layer 60. - 200926475 When the p-type organic semiconductor layer 400 is replaced by an n-type organic semiconductor layer, the absolute order of the LUMO of the n-type organic semiconductor layer should be smaller than the absolute value of the working function of the conductor layer. The hole transport layer 41 1, 421, 43 1 can use, for example, a -NPD. The electron transport layers 412, 422, and 43 2 may be formed of, for example, Alq3 or the like. * 〇 © The conductor layer 60 may be, for example, Mg, Ag, Al, Ca, Li, Cs,
Ni、Ti等之金屬材料、由LiF/Al所構成之金屬層狀構造、 ITO、IZO等之無機導電體材料、PEDOT等之有機導電體 材料所形成。 藉由以電洞傳輸層41 1、421、43 1、發光層412、422 、432、及電子傳輸層413、423、433之層狀構造所構成之 pn二極體，可以防止源極電極（160、20、260)與汲極電極 ' (180、22、280)間之短路。亦即，藉由上述pn二極體，可 Ο 防止載體之逆流，原理上，不會介由導電體層60發生源極 •汲極間之短路。 當做P型電晶體，而對源極•汲極間施加偏電壓時， 導電體層60與汲極電極（180、22、280)間，因爲電場方向 爲相當於pn接合之逆向偏壓，不會介由導電體層60而於源 極電極16與汲極電極（180、22、280)間發生短路。 同樣地，對源極·汲極間施加偏電壓時，帽蓋用之導 電體層60與源極電極（160、20、260)間，因爲係相當於pn 接合之順向偏壓，帽蓋用之導電體層60，藉由從源極電極 -58- 200926475 (基準電位）朝pn接合之順向電壓下降（Vf)份之電位差而處 於安定。此外，P型有機半導體層（電晶體活性層）4〇〇內部 之電位，藉由帽蓋用導電體層60之電磁屏蔽效果而安定化 〇 本發明之第5實施形態之有機半導體發光裝置之構造 時，各電極、各層係分別以濺鍍、蒸鍍、塗佈等來進行成 膜。 〇 基板ίο之材料可以使用與第1至第4實施形態相同之材 料。 閘極電極120之材料亦可以使用與第1至第4實施形態 相同之材料。 閘極絕緣膜15之材料亦可以使用與第1至第4實施形態 相同之材料。 源極電極（160、20、260)及汲極電極（180、22、280) ' 之材料亦可以使用與第3至第4實施形態相同之材料。 © P型有機半導體層（電晶體活性層）400，例如，亦可以 a-Si、聚矽等之無機半導體材料等置換形成。 (P型有機半導體材料） 第6圖至第7圖所示之p型有機半導體材料之分子構造 例，係與本發明之第5實施形態之有機半導體發光裝置相 同。 (形成電洞傳輸層之電洞傳輸材料） -59- 200926475 第8圖至第9圖所示之電洞傳輸材料之分子構造例，係 與本發明之第5實施形態之有機半導體發光裝置相同。 (形成電子傳輸層之電子傳輸材料） 第10圖至第11圖所示之電子傳輸材料之分子構造例， 係與本發明之第5實施形態之有機半導體發光裝置相同。 © (載體傳輸性發光材料、或發光摻雜物及宿主材料） 發光層312、 322、 332、 412、 422、 432，係與本發明 之第1至第4實施形態之有機半導體發光裝置之載體傳輸性 發光材料、或發光摻雜物及宿主材料相同之材料。 此外，本發明之第5實施形態之半導體發光裝置，如 第5圖所示，有機半導體發光元件部分，係以底部發射型 做爲構成例，然而，亦可爲頂部發射型或雙方發射型之構 ' 成。 Ο 依據本發明之第5實施形態，係將頂部接觸型之有機 薄膜電晶體及面發光型有機半導體發光元件集成化於同一 基板上之有機半導體發光裝置，可提供從源極/汲極電極 之電洞注入能力較高，將高介電常數之絕緣膜當做有機薄 膜電晶體之閘極絕緣膜使用，表面改質容易，有機半導體 材料之定向控制亦良好，可提高有機薄膜電晶體之特性（ 低電壓驅動、高驅動電流），而且，保持有機薄膜電晶體 及面發光型有機半導體發光元件之平坦性，適合提高發光 特性及良率之集成化的有機半導體發光裝置。 -60- 200926475 本發明之第5實施形態之有機半導體發光裝置，係提 供可改善面發光型有機半導體發光元件之亮度誤差、發光 波長之誤差所導致之亮點/色斑等之發光特性，抑制良率 之降低，因爲面發光型有機半導體發光元件及有機薄膜電 晶體可多層化，而大幅提高發光效率。 ' [其他實施形態] 〇 如以上所述，本發明針以第1至第5實施形態進行記載 ，然而，構成上述陳述之一部分的論述及圖式，並非用以 限制本發明。相關業者可以從上面之陳述，得知各種替代 實施形態、實施例、及運用技術。 適用於本發明之第1至第5實施形態之有機半導體發光 裝置之構成的有機半導體材料，例如，可以真空蒸鍍法、 管柱層析法、再結晶法等之化學精製法、昇華精製法來形 成’高分子材料時，可以旋鍍、浸塗、刮刀塗佈、噴墨法 © 等之濕式成膜法等來形成。 本發明之第1至第4實施形態之有機半導體發光裝置時 ’有機薄膜電晶體係以底部接觸型爲例，此外，本發明之 第5實施形態之有機半導體發光裝置時，係以頂部接觸型 爲例’然而’有機薄膜電晶體之構造並未受限於此，亦可 以爲源極電極/汲極電極之任一方爲底部接觸型而另一方 爲頂部接觸型之構成。 此外’本發明之第1至第5實施形態之有機半導體發光 裝置時’有機薄膜電晶體，係以橫向配置源極電極/汲極 -61 - 200926475 電極，電流係導通於大致平行基板表面之方向的橫向型構 造，然而，有機薄膜電晶體之構造並未受限於此，亦可形 成爲縱向配置源極電極/汲極電極，而使電流導通於大致 垂直基板表面之方向的縱向型構造之靜電感應電晶體之構 造。縱向型構造可以增大電流容量，較橫向型構造更爲有 利。 • 此外，本發明之第1至第5實施形態之有機半導體發光 〇 裝置時，有機半導體發光元件，係以具有重複電洞傳輸層 /發光層/電子傳輸層之構造爲例，然而，於電洞傳輸層/發 光層/電子傳輸層與電洞傳輸層/發光層/電子傳輸層之間， 亦可夾有由金屬或導電體層所構成之電荷發生層，來提高 發光效率。 如上所示，本發明當然包含此處未記載之各種實施形 態等在內。所以，本發明之技術範圍，係由依上述說明之 ' 適當申請專利範圍之發明特定事項所決定。 ❹ 本發明之實施形態之面發光型有機半導體發光裝置， 因爲可實現高性能之有機薄膜電晶體及面發光型有機半導 體發光元件之集成化構造，可適用於有機CMOS FET等之 有機積體電路分野、有機發光裝置、平面顯示裝置、以實 現彈性顯示器爲目的之有機EL顯示器等之彈性電子元件 分野、及透明電子元件分野，此外，尙可適用於照明機器 、有機雷射、太陽電池、氣體感測器、味覺感測器、氣味 測器等之生化感測器等廣泛分野。 -62- 200926475 【圖式簡單說明】 第1圖係本發明之第1實施形態之有機半導體發光裝置 的槪念剖面構造圖 第2圖係本發明之第2實施形態之有機半導體發光裝置 的槪念剖面構造圖 第3圖係本發明之第3實施形態之有機半導體發光裝置 • 的槪念剖面構造圖 〇 第4圖係本發明之第4實施形態之有機半導體發光裝置 的槪念剖面構造圖 第5圖係本發明之第5實施形態之有機半導體發光裝置 的槪念剖面構造圖 第6圖係可適用於本發明之第1至第5實施形態之有機 . 半導體發光裝置之P型有機半導體層（電晶體活性層）24的p 型有機半導體材料之分子構造例，（a)係Pyl〇5(Me): 1，6雙 (2-(4-甲苯基）乙烯基）芘之分子構造例，（b)係蒽系材料之 © 四苯之分子構造例，（c)係蒽系材料之並五苯之分子構造 例’（d)係酞青素系材料之銅酞青素（CuPc)之分子構造例 ’（e)係α -NPD之分子構造例，（f)係Ρ·6Ρ2分子構造例， (g)係DBTBT之分子構造例，（h)係BV2TVB之分子構造例 ’⑴係BP2T之分子構造例，⑴係DHADT之分子構造例。 第7圖係可適用於本發明之第1至第5實施形態之有機 半導體發光裝置之p型有機半導體層（電晶體活性層）24的 高分子系半導體材料之分子構造例，（3)係聚塞吩（PT)之分 子構造例’（b)係聚乙炔（PA)之分子構造例，（c)係 -63- 200926475 polythienylenevinylene(PTV)之分子構造例，（d)係聚-3-己 烷噻吩（P3HT)之分子構造例，（e)係9,9-二辛基苐-并噻吩 共聚物（F8T2)之分子構造例。 第8圖係用以形成本發明之第1至第5實施形態之有機 半導體發光裝置之電洞傳輸層的電洞傳輸材料之分子構造 例，（a)係GPD之分子構造例’（b)係spiro-TAD之分子構造 • 例，（c)係spiro-NPD之分子構造例，（d)係〇xidized-TPD之 © 分子構造例。 第9圖係用以形成本發明之第1至第5實施形態之有機 半導體發光裝置之電洞傳輸層的其別電洞傳輸材料之分子 構造例，（a)係TDAPB之分子構造例，（b)係MTDATA之分 子構造例。 第10圖係用以形成本發明之第1至第5實施形態之有機 半導體發光裝置之電子傳輸層的電子傳輸材料之分子構造 例’（a)係t-butyl-PBD之分子構造例，（b)係TAZ之分子構 © 造例，（c)係silole derivative之分子構造例，（d)係硼置換 型三芳基系化合物之分子構造例，（e)係苯基喹惡啉衍生 物之分子構造例。 第11圖係用以形成本發明之第1至第5實施形態之有機 半導體發光裝置之電子傳輸層的其他電子傳輸材料之分子 構造例，（a)係Alqs之分子構造例，（b)係BCP之分子構造 例’（〇係噁二唑二重體之分子構造例，（d)係starburst噁 200926475 【主要元件符號說明】 10 :基板 15、 170 :閘極絕緣膜 16、 20、160、260:金屬層（源極電極） 18、22、180、280:金屬層（汲極電極） 3 0 :陽極電極 • 40 :陰極電極 © 50 :濾色器 60 :導電體層 1 2 0 :闊極電極 311、 321、331、411、421、431 :電洞傳輸層 312、 322、332、412、422、43 2 ：發光層 _ 4〇〇 : P型有機半導體層（電晶體活性層） 313、 323、333、413、423、43 3 ：電子傳輸層 ❹ -65-A metal material such as Ni or Ti, a metal layer structure composed of LiF/Al, an inorganic conductor material such as ITO or IZO, or an organic conductor material such as PEDOT. The source electrode can be prevented by the pn diode formed by the layered structures of the hole transport layers 41 1 , 421 , 43 1 , the light-emitting layers 412 , 422 , 432 , and the electron transport layers 413 , 423 , and 433 ( Short circuit between 160, 20, 260) and the electrode of the drain (180, 22, 280). That is, with the pn diode described above, the reverse flow of the carrier can be prevented, and in principle, the short circuit between the source and the drain is not caused by the conductor layer 60. When a P-type transistor is applied and a bias voltage is applied between the source and the drain, between the conductor layer 60 and the drain electrode (180, 22, 280), since the direction of the electric field is equivalent to the reverse bias of the pn junction, A short circuit occurs between the source electrode 16 and the drain electrode (180, 22, 280) via the conductor layer 60. Similarly, when a bias voltage is applied between the source and the drain, the cap layer for the conductor layer 60 and the source electrode (160, 20, 260) is equivalent to the forward bias of the pn junction, and the cap is used. The conductor layer 60 is stabilized by a potential difference from the source electrode -58-200926475 (reference potential) to the forward voltage drop (Vf) of the pn junction. Further, the potential inside the P-type organic semiconductor layer (transistor active layer) is stabilized by the electromagnetic shielding effect of the cap conductor layer 60. The structure of the organic semiconductor light-emitting device according to the fifth embodiment of the present invention In this case, each electrode and each layer are formed by sputtering, vapor deposition, coating, or the like. The material of the substrate ίο can be the same as those of the first to fourth embodiments. The material of the gate electrode 120 can also be the same as those of the first to fourth embodiments. The material of the gate insulating film 15 can also be the same as those of the first to fourth embodiments. The materials of the source electrodes (160, 20, 260) and the drain electrodes (180, 22, 280)' may be the same as those of the third to fourth embodiments. © P-type organic semiconductor layer (crystal active layer) 400, for example, may be formed by substitution of an inorganic semiconductor material such as a-Si or polyfluorene. (P-type organic semiconductor material) The molecular structure of the p-type organic semiconductor material shown in Fig. 6 to Fig. 7 is the same as that of the organic semiconductor light-emitting device according to the fifth embodiment of the present invention. (Cell Transport Material Forming Hole Transport Layer) -59- 200926475 The molecular structure example of the hole transport material shown in Figs. 8 to 9 is the same as the organic semiconductor light-emitting device according to the fifth embodiment of the present invention. . (Electron-transmitting material forming the electron-transporting layer) The molecular structure of the electron-transporting material shown in Figs. 10 to 11 is the same as that of the organic semiconductor light-emitting device according to the fifth embodiment of the present invention. © (carrier-transporting luminescent material, luminescent dopant, and host material) The luminescent layers 312, 322, 332, 412, 422, and 432 are the carriers of the organic semiconductor light-emitting device according to the first to fourth embodiments of the present invention. A luminescent material, or a material having the same luminescent dopant and host material. Further, in the semiconductor light-emitting device according to the fifth embodiment of the present invention, as shown in Fig. 5, the organic semiconductor light-emitting device portion has a bottom emission type as a configuration example, but may be a top emission type or a two-emitting type. Structure 'cheng. According to the fifth embodiment of the present invention, the organic semiconductor light-emitting device in which the top-contact type organic thin film transistor and the surface-emitting organic semiconductor light-emitting device are integrated on the same substrate can be provided from the source/drain electrodes. The hole injection capability is high, and the high dielectric constant insulating film is used as the gate insulating film of the organic thin film transistor, the surface modification is easy, the orientation control of the organic semiconductor material is also good, and the characteristics of the organic thin film transistor can be improved ( The low-voltage driving and the high driving current) and the flatness of the organic thin film transistor and the surface-emitting organic semiconductor light-emitting device are suitable for an integrated organic semiconductor light-emitting device having improved light-emitting characteristics and yield. -60-200926475 The organic semiconductor light-emitting device according to the fifth embodiment of the present invention provides light-emitting characteristics such as bright spots/color spots caused by variations in luminance error and light-emitting wavelength of the surface-emitting organic semiconductor light-emitting device, and improves the light-emitting characteristics. The rate is lowered because the surface-emitting organic semiconductor light-emitting device and the organic thin film transistor can be multilayered, and the luminous efficiency is greatly improved. [Other Embodiments] As described above, the present invention has been described with reference to the first to fifth embodiments. However, the description and drawings which constitute a part of the above description are not intended to limit the present invention. A variety of alternative embodiments, examples, and techniques of operation will be apparent to those skilled in the art from this disclosure. The organic semiconductor material to be used in the organic semiconductor light-emitting device according to the first to fifth embodiments of the present invention may be, for example, a chemical purification method such as a vacuum deposition method, a column chromatography method, or a recrystallization method, or a sublimation purification method. When the 'polymer material is formed, it can be formed by a wet film formation method such as spin coating, dip coating, doctor blade coating, or inkjet method. In the organic semiconductor light-emitting device according to the first to fourth embodiments of the present invention, the organic thin film electro-crystal system is exemplified by the bottom contact type, and the organic semiconductor light-emitting device according to the fifth embodiment of the present invention is a top contact type. For example, the structure of the organic film transistor is not limited thereto, and the source electrode/drain electrode may be either a bottom contact type or a top contact type. Further, in the organic semiconductor light-emitting device according to the first to fifth embodiments of the present invention, the organic thin film transistor is arranged such that the source electrode/drain electrode-61 - 200926475 electrode is disposed laterally, and the current system is conducted in a direction substantially parallel to the surface of the substrate. The lateral type structure, however, the configuration of the organic thin film transistor is not limited thereto, and may be formed as a longitudinal type configuration in which a source electrode/drain electrode is disposed in a longitudinal direction and a current is conducted in a direction substantially perpendicular to a surface of the substrate. The construction of an electrostatic induction transistor. The longitudinal configuration increases the current capacity and is more advantageous than the lateral configuration. In the organic semiconductor light-emitting device of the first to fifth embodiments of the present invention, the organic semiconductor light-emitting device has a structure having a repeating hole transport layer/light-emitting layer/electron transport layer as an example. Between the hole transport layer/light emitting layer/electron transport layer and the hole transport layer/light emitting layer/electron transport layer, a charge generating layer composed of a metal or a conductor layer may be interposed to improve luminous efficiency. As described above, the present invention naturally includes various embodiments and the like not described herein. Therefore, the technical scope of the present invention is determined by the specific matters of the invention as described in the above-mentioned Applicable Patent Application.面 The surface-emitting organic semiconductor light-emitting device of the embodiment of the present invention can be applied to an organic integrated circuit such as an organic CMOS FET because an integrated structure of a high-performance organic thin film transistor and a surface-emitting organic semiconductor light-emitting device can be realized. Fields, organic light-emitting devices, flat-panel display devices, organic EL displays for the purpose of elastic displays, and electronic components, and transparent electronic components, in addition to 照明, can be applied to lighting equipment, organic lasers, solar cells, gases Biochemical sensors such as sensors, taste sensors, and odor detectors are widely divided. [Embodiment of the drawings] FIG. 1 is a perspective view of a structure of an organic semiconductor light-emitting device according to a first embodiment of the present invention. FIG. 2 is a view showing an organic semiconductor light-emitting device according to a second embodiment of the present invention. 3 is a view of a cross-sectional structure of an organic semiconductor light-emitting device according to a third embodiment of the present invention. FIG. 4 is a view showing a cross-sectional structure of an organic semiconductor light-emitting device according to a fourth embodiment of the present invention. Fig. 5 is a view showing a cross-sectional structure of an organic semiconductor light-emitting device according to a fifth embodiment of the present invention. Fig. 6 is applicable to the organic semiconductor device of the first to fifth embodiments of the present invention. Molecular structure of a p-type organic semiconductor material of a layer (crystal active layer) 24, (a) is a molecular structure of Pyl〇5(Me): 1,6 bis(2-(4-methylphenyl)vinyl)anthracene For example, (b) is a lanthanide material © tetrahedral molecular structure, (c) is a lanthanide material, and the pentacene molecular structure is ''d) is an anthraquinone-based material, anthocyanin (CuPc) The molecular structure of the structure '(e) is the molecular structure of α-NPD Embodiment, (f) Department of Example Ρ · 6Ρ2 molecular structure, (g) Molecular structure of the embodiment DBTBT, (h) based '⑴ BP2T Molecular structure of the embodiment, ⑴ based DHADT molecular structure of the molecular configuration example embodiment of BV2TVB. Fig. 7 is a molecular structure example of a polymer-based semiconductor material which can be applied to the p-type organic semiconductor layer (electrolyte active layer) 24 of the organic semiconductor light-emitting device according to the first to fifth embodiments of the present invention, and (3) Molecular structure example of polycetabene (PT) '(b) is a molecular structure example of polyacetylene (PA), (c) is a molecular structure of -63-200926475 polythienylenevinylene (PTV), and (d) is a poly-3- A molecular structure example of hexanethiophene (P3HT), and (e) is a molecular structure example of a 9,9-dioctylfluorene-and thiophene copolymer (F8T2). 8 is a molecular structure example of a hole transporting material for forming a hole transport layer of the organic semiconductor light-emitting device according to the first to fifth embodiments of the present invention, and (a) is a molecular structure example of GPD' (b) The molecular structure of spiro-TAD, (c) is a molecular structure of spiro-NPD, and (d) is a molecular structure of 〇xidized-TPD. Fig. 9 is a view showing a molecular structure of another hole transporting material for forming a hole transport layer of the organic semiconductor light-emitting device according to the first to fifth embodiments of the present invention, and (a) is a molecular structure example of TDAPB, ( b) is a molecular structure example of MTDATA. 10 is a molecular structure example of an electron transport material for forming an electron transport layer of an organic semiconductor light-emitting device according to the first to fifth embodiments of the present invention. (a) is a molecular structure example of t-butyl-PBD. b) is a molecular structure of TAZ, (c) is a molecular structure example of silole derivative, (d) is a molecular structure example of a boron-substituted triaryl compound, and (e) is a phenylquinoxaline derivative. Molecular structure examples. 11 is a molecular structure example of another electron transporting material for forming an electron transporting layer of the organic semiconductor light-emitting device according to the first to fifth embodiments of the present invention, wherein (a) is a molecular structure example of Alqs, and (b) is a system. Molecular structure example of BCP' (Molecular structure of bismuth oxadiazole double body, (d) starburst evil 200926475 [Description of main components] 10: Substrate 15, 170: gate insulating film 16, 20, 160, 260: metal layer (source electrode) 18, 22, 180, 280: metal layer (drain electrode) 3 0 : anode electrode • 40: cathode electrode © 50: color filter 60: conductor layer 1 2 0 : wide pole Electrodes 311, 321 , 331 , 411 , 421 , 431 : hole transport layers 312 , 322 , 332 , 412 , 422 , 43 2 : light-emitting layer _ 4 〇〇: P-type organic semiconductor layer (transistor active layer) 313, 323, 333, 413, 423, 43 3 : electron transport layer ❹ -65-