200925640 九、發明說明： 【發明所屬之技術領域】 本發明係關於雙能量型之放射線檢測器。 【先前技術】 雙能量型之放射線檢測器係檢測穿透被檢查物之低能量 範圍之放射線及高能量範圍之放射線之裝置（例如表照專 利文獻1)。依據此種放射線檢測器，可同時取得低能量範 圍之放射線像及高能量範圍之放射線像，依據該等放射線 像，作成被施行特定處理（例如加權減算及疊合等）之處理 圖像，而可在輸送帶等所輸送之被檢查物之非破壞檢查 (即，線上之非破壞檢查）中，以高的精度實現異物之檢 測、成分分佈之計測、重量之計測等。 專利文獻1:日本特公平5-68674號公報 【發明内容】 發明所欲解決之問題 且說對雙能量型之放射線檢測器，期待防止同時取得之 低能量範圍之放射線像與高能量範圍之放射線像移位等進 一步可靠性之提高。 因此，本發明係鑑於此種情況而完成者，其目的在於提 供一種高可靠性之放射線檢測器。 解決問題之技術手段 為達成上述目的，本發明之放射線檢測器之特徵在於： 其係檢測由前側入射之第i能量範圍之放射線及第2能量範 圍之放射線，且包含：第！閃爍器層，其係沿著特定方向 134890.doc 200925640 延伸’且將第1能量範圍之放射線變換成光；第1光檢測 器，其係具有沿著特定方向被一維地配置而固定於第i閃 爍器層之前側，且將第1閃爍器層所變換之光變換成電氣 信號之複數第1光檢測部、及設置有第丨光檢測部之第1基 板，第2閃爍器層，其係沿著特定方向延伸而接觸於第J閃 爍器層之後側，且將第2能量範圍之放射線變換成光；及 第2光檢測器，其係具有沿著特定方向被一維地配置而固 ❹ 定於第2閃爍器層之後側，且將第2閃爍器層所變換之光變 換成電氣信號之複數第2光檢測部、及設置有第2光檢測部 之第2基板；第1閃爍器層之厚度薄於第2閃爍器層之厚 度，在使用於第1閃爍器層與第1光檢測器之固定之第上接 著劑硬度和使用於第2閃爍器層與第2光檢測器之固定之第 2接著劑硬度方面，在第i閃爍器層與第丨光檢測器之間之 第1溫度變形量之差及第2閃爍器層與第2光檢測器之間之 第2溫度變形量之差中，使用於溫度變形量之差較大之— 〇 方之接著劑硬度低於使用於溫度變形量之差較小之一方之 接著劑硬度。 在此放射線檢測器中，使將第丨能量範圍之放射線變換 成光之第1閃爍器層與將第2能量範圍之放射線變換成光之 第2閃爍器層接觸，並且配置於前側之第1閃爍器層之厚产 薄於配置於後侧之第2閃爍器層之厚度。藉由此等，對以 相同角度由前側入射之第i能量範圍之放射線及第2能量範 圍之放射線之在第1閃爍器層之發光位置與在第2閃爍器層 之發光位置之偏移量會變小。因此，可防止同時取得之第 134890.doc 200925640 1能量範圍之放射線像與第2能量範圍之放射線像移位。而 且，在此放射線檢測器_，在使用於第丨閃爍器層與第！光 檢測器之固定之第1接著劑硬度和使用於第2閃爍器層與第 2光檢測器之固定之第2接著劑硬度方面，在第丨閃爍器層 與第1光檢測器之間之第1溫度變形量之差、及第2閃爍器 層與第2光檢測器之間之第2溫度變形量之差中，使用於溫 度變形量之差較大之一方之接著劑硬度低於使用於溫度變 〇 形量之差較小之一方之接著劑硬度。因此，在第1閃爍器 層與第1光檢測器之間之第丨溫度變形量之差及第2閃爍器 層與第2光檢測器之間之第2溫度變形量之差中，溫度變形 直之差較小之一方自屬當然，即使在溫度變形量之差較大 之一方亦抑制閃爍器層與光檢測器之間之剝離，而可避免 因該等剝離部分而感度（亮度）顯著降低。藉由以上，依據 此放射線檢測器’可提高可靠性。 又，所謂第1能量範圍之放射線，係意味著具有特定範 ❹ 圍之能量之放射線，所謂第2能量範圍之放射線，係意味 著具有異於該特定範圍之範圍之能量之放射線。又，所謂 • 閃爍器層與光檢測器之間之溫度變形量之差，係意味著^ 特定溫度上升之情形之閃爍器層之變形量與光檢測器之變 形量之差（主要是膨脹量之差）或僅特定溫度下降之情形之 閃燦器層之變形量與光檢測器之變形量之差（主要是收 量之差）。 ” 在本發明之放射線檢測器中，最好第丨光檢測器之構成 與第2光檢測器之構成大致相同；第丨閃爍器層之構成與第 134890.doc 200925640 2閃爍器層之構成相異。此情形，由於糾光檢測器之構成 與第2光檢測器之構成大致相同，故可謀求放射線檢測器 之製造成本低廉化。另外，可容易實現使第丨能量範圍之 放射線入射於^閃爍器層，使第2能量範圍之放射線入射 於第2閃爍器層。 在本發明之放射線檢測器中，最好第丨光檢測部係在一 面保持第1間隙，一面沿著特定方向被一維配置之複數第1 〇 光檢測元件之各個至少形成2個，藉此沿著特定方向被一 維配置；第1接著劑係被填充於第i閃爍器層與第i光檢測 元件之間及第1間隙；第2光檢測部係在一面保持第2間 隙，一面沿著特定方向被一維配置之複數第2光檢測元件 之各個至夕$成2個，藉此沿著特定方向被一維配置丨第2 接著劑係被填充於第2閃爍器層與第2光檢測元件之間。此 凊形，可避免相鄰之光檢測元件彼此接觸而該等破損。 在本發明之放射線檢測器中，最好第丨閃爍器層與第2閃 〇 ^層係以滑動方式接觸。此情形，即使在第1閃爍器層 與第2閃爍器層之間產生溫度變形量之差，第1閃爍器層與 第2閃爍器層也互相滑動，故可更確實地抑制第】閃爍器層 與第1光檢測器之剝離及第2閃爍器層與第2光檢測器之剝 離。 【實施方式】 發明之效果 依據本發明，可提高放射線檢測器之可靠性。 以下，參照圖式詳細說明有關本發明之較佳實施型態。 134890.doc 200925640 又，在各圖中，在同一或相當部分附上同一符號，省略重 複之說明。 圖1係適用本發明之放射線檢測器之一實施型態之χ射線 線型感測器之非破壞檢查系統之構成圖。如圖1所示，非 . 破壞檢查系統50係包含搬送被檢查物S之輸送帶51、向輸 送帶51所搬送之被檢查物s出射χ射線之χ射線源52、檢測 穿透被檢查物S之低能量範圍之χ射線（第丨能量範圍之放射 ❹ 線）及高能量範圍之X射線（第2能量範圍之放射線）之雙能 量型之X射線線型感測器（一維感測器）丨、覆蓋被檢查物 S、X射線源52及X射線線型感測器iix射線遮蔽箱53、及 與X射線線型感測器！電性連接之電腦54。電腦54係依據同 時取彳于之低能量範圍之x射線穿透像及高能量範圍之X射 線穿透像，作成被施行特定處理（例如加權減算及疊合等） 之處理圖像。 以下，作為一維感測器，雖例示線型感測器，但不限定 〇 於此，作為可適用於本發明之放射線檢測器之其他之一維 感測器’例如’可列舉TDI感測器等。 依據如此所構成之非破壞檢查系統5〇，可對食品及電子 零件等被檢查物S，以異物之檢測為首，利用高的精度實 -現成分分佈之計測、重量之計測等。 圖2係圖1之χ射線線型感測器之剖面圖，圖3係圖2之乂 射線線型感測器之要部放大圖，圖4係沿著圖3之乂射線線 型感測器之1V-IV線之剖自圖。如圖2至4所示，χ射線線型 感测器1係包含鋁所構成之直方體狀之機構體2。機構體2 134S90.doc 200925640 ”有構成則側（X射線源52側）之前段部3及構成後側之後段 部4，在前段部3設有開口5。 在機構體2之前側，安裝有使由X射線源52出射之X射線 通過^隙縫構造體6。隙縫構造體6具有形成向特定方向 . (由則側看之情形，為與被檢查物S之搬送方向正交之方 向）延伸之隙縫7a之第丨板狀構件7、及由後側支撐第1板狀 構件7之第2板狀構件8。第丨板狀構件7係由遮蔽X射線之金 ❹ 屬（例如鉛）所構成，第2板狀構件8係由硬度比使用於第丨板 狀構件7之金屬高之金屬（例如不銹鋼）所構成。 在第2板狀構件8，在隙縫7a形成有沿著向其長側方向延 伸之方緣部及他方緣部而向後側立設之壁部8a。壁部8a 配置於设在機構體2之前段部3之開口 5内。 在機構體2之前段部3之内面，安裝有第1光檢測器丨J。 第1光檢測器11係具有固定於機構體2之前段部3之矩形板 狀之第1基板12、一面隔著些微之第丨間隙丨3，一面沿著特 Ο 定方向而被一維地配置於第1基板12上之複數（例如8至14 個）之第1光檢測元件14、及配置於第1基板12上而藉由金 屬線接合被電性連接於各光檢測元件丨4之放大器電路i 5 等。在第1光檢測元件14，在χ射線之入射方向（與被檢查 . 物8之搬送方向及特定方向正交之方向），以與隙縫7a對向 之方式沿著特定方向而一維地形成複數（例如128個）之作為 光電變換元件之第1光檢測部16。 在機構體2之後段部4之内面，安裝有第2光檢測器17。 第2光檢測器π係具有固定於機構體2之後段部4之矩形板 134890.doc 200925640 狀之第2基板18、一面隔著些微之第2間隙19，一面沿著特 定方向而被一維地配置於第2基板18上之複數（例如8至14 個）之第2光檢測元件21、及配置於第2基板18上而藉由金 屬線接合被電性連接於各光檢測元件21之放大器電路22 等。在第2光檢測元件21 ’在X射線之入射方向，以與第1 光檢測部16分別對向之方式沿著特定方向而一維地形成複 數（例如128個）之作為光電變換元件之第2光檢測部23。 又’第1光檢測器11之構成與第2光檢測器1 7之構成大致 相同，作為光檢測元件14、21，例如使用CCD及CMOS等 之線型感測器。而，由前側看之情形，在與特定方向正交 之方向，第1基板12之一方緣部12a位於第2基板18之一方 緣部1 8a之外侧，第2基板18之他方緣部1 8b位於第1基板i 2 之他方緣部12b之外側。 在第1光檢測元件14及第1間隙13之後侧，配置有沿著特 定方向延伸，吸收低能量範圍之X射線而發光之第丨閃爍器 Φ 層24。第1光檢測元件14之第1光檢測部16係被第i接著劑 25固定於第1閃爍器層24之前側，將第j閃爍器層以所發出 之光變換成電氣信號◊第1接著劑25不僅第爍器層24與 、 第1光檢測元件14之間，也可填充於第〖間隙13。 • 第1閃爍器層24例如係被釓一體地形成厚度0·；[ mm程度 之帶狀。第1閃爍器層24之寬度由前側看之情形，係在與 特定方向正交之方向，寬於隙縫7a之寬度。 在第2光檢測元件21及第2間隙19之前側，配置有沿著特 定方向延伸，吸收高能量範圍之X射線而發光之第2閃爍器 134890.doc 200925640 層26。第2光檢測元件21之第2光檢測部23係被第2接著劑 27固定於第2閃爍器層26之後側，將第2閃爍器層26所發出 之光變換成電氣信號。第2接著劑27不僅第2閃爍器層26與 第2光檢測元件21之間，既可填充，也可不填充於第2間隙 19。 第2閃爍器層26係具有在X射線之入射方向以與第2光檢 測部23分別對向方式，沿著特定方向而被一維地配置之複 數閃爍器部28、及覆蓋排除固定在X射線之入射方向對向 之第2光檢測部23之面以外之閃爍器部28之反射層29。閃 爍器部28係吸收高能量範圍之X射線而發光，為了 一面維 持高解像度，一面確實吸收高能量範圍之X射線，例如藉 由鎢酸釓將底面形成〇·4 mmx〇.4 mm、高度2 mm程度之四 角柱狀。反射層29例如係藉由將蒸鍍鋁等金屬之遮光板接 著於閃爍器部28而形成，可使X射線通過，且反射第！閃爍 器層24所發之光及閃爍器部28所發之光。此情形，最好： 〇 利用反射板覆蓋排除固定閃爍器部28與第2光檢測部23之 面以外之閃爍器部28之其他面而形成反射層29。在反射層 29中，由前側看之情形，在與特定方向正交之方向，使對 向之部分29a之厚度厚於其他部分之厚度。反射層29也可 • 為使鋁蒸鍍於閃爍器部28而形成之反射膜。 又，在使用於第1閃爍器層24與第1光檢測器丨丨之固定之 第1接著劑25之硬度、和使用於第2閃爍器層％與第2光檢 測器1 7之固疋之第2接著劑27之硬度中，在第j閃爍器層24 與第1光檢測器η之間之第丨溫度變形量之差、及第2閃爍 134890.doc 12 200925640 器層26與第2光檢測器17之間之第2溫度變形量之差中，使 用於溫度變形量之差較大之一方之接著劑之硬度低於使用 於溫度變形量之差較小之一方之接著劑之硬度。在本實施 型態中，由於第1閃爍器材料與第2閃爍器材料相異，故溫 度變形量相異。在此，作為接著劑之硬度，例如可適用肖 氏硬度（JIS Z2246)。又，第1閃爍器層24與（設置反射層29) 之第2閃爍器層26係以滑動方式接觸。既可分別以接著劑 固定第1閃爍器層24及反射層29之界面、和第2閃爍号層26 〇 、-曰 及反射層29之界面之兩面，或也可僅接著固定其中一方之 界面。前者之情形’與上述同樣地，在第1閃爍器層24與 第1光檢測器11之間之第1溫度變形量之差、及第2閃爍器 層26與第2光檢測器17之間之第2溫度變形量之差中，使用 於溫度變形量之差較大之一方之接著劑之硬度低於使用於 溫度變形量之差較小之一方之接著劑之硬度。可依照溫度 變形量之差異’使用硬度相異之接著劑，防止在反射層29 〇 與閃爍器之界面之剝離、及檢測器與閃爍器之界面之剝 離。又’在後者，可介著反射層29使第1閃爍器層24與第2 閃爍器層26滑動接觸，故可防止溫度變形量之差引起之在 各界面之剝離。而，與第2閃爍器層26之厚度相比，可藉 • 由使第1閃爍器層24之厚度變得極薄等，而使第1閃爍器層 24之構成與第2閃爍器層26之構成相異。 在第1光檢測器11之第1基板12上，連接電氣信號輸出用 之連接器31。由第1光檢測器η輸出之電氣信號經由連接 器3 1及A/D變換•掃描變換電路基板33等傳送至電腦54。 134890.doc -13- 200925640 同樣地’在第2光檢測器17之第2基板18上，連接電氣信號 輸出用之連接器32。由第2光檢測器17輸出之電氣信號經 由連接器32及A/D變換•掃描變換電路基板34等傳送至電 腦54。 說明有關適用如以上所構成之X射線線型感測器1之非破 壞檢查系統5 0之動作。 由X射線源52出射而穿透被檢查物S之X射線通過隙縫7a Φ 及壁部8a、8a間’穿透第1光檢測器11而入射於第1閃爍器 層24。入射於第！閃爍器層24之乂射線中，低能量範圍之X 射線被第1閃爍器層24吸收，此時，第1閃爍器層24所發出 之光被第1光檢測器11之第1光檢測部16變換成電氣信號。 此電氣信號經由第1光檢測器Π之放大器電路15、連接器 31及A/D變換•掃描變換電路基板33等傳送至電腦54。由 電腦54取得低能量範圍之X射線穿透像。 入射於第1閃爍器層24之X射線中，高能量範圍之又射線 〇 穿透第1閃爍器層24及反射層29而被第2閃爍器層26之閃爍 器部28吸收，此時，閃爍器部28所發出之光被第2光檢測 器17之第2光檢測部23變換成電氣信號。此電氣信號經由 ’ 第2光檢測器17之放大器電路22、連接器32及A/D變換•掃 - 描變換電路基板34等傳送至電腦54。由電腦54取得高能量 範圍之X射線穿透像。 而，同時被取得之低能量範圍之X射線穿透像及高能量 範圍之X射線穿透像被電腦54施行特定處理（例如加權減算 及疊合等）而被作成被檢查物S之處理圖像。藉此，可在輸 134890.doc -14- 200925640 送帶51所輸送之被檢查物S，以高的精度實現異物之檢 測、成分分佈之計測、重量之計測等。 如以上所說明，在X射線線型感測器i中，如圖4所示， 吸收低能量範圍之X射線而發光之第！閃爍器層24與吸收高 能量範圍之X射線而發光之第2閃爍器層26相接觸，另外， 使配置於前側之第1閃爍器層24之厚度薄於配置於後側之 第2閃爍器層26之厚度（小於相鄰之第1光檢測部1 6之中心 φ 間距離）。藉此，對以相同角度由前側入射之低能量範圍 之X射線及高能量範圍之X射線之在第1閃爍器層24之發光 位置P1與在第2閃爍器層26之發光位置P2之偏移量會變 小’故此時，第1閃爍器層24所發出之光及第2閃爍器層26 所發出之光可被在X射線之入射方向中對向之第1光檢測部 1 6及第2光檢測部2 3所檢測。因此，可防止同時取得之低 月&量範圍之X射線穿透像與高能量範圍之X射線穿透像移 位。 ❹ 又 ，在X射線線型感測器1中，在使用於第i閃爍器層24 與第1光檢測器11之固定之第1接著劑25之硬度、和使用於 第2閃爍器層26與第2光檢測器17之固定之第2接著劑27之 硬度中’在第1閃爍器層24與第1光檢測器11之間之第1溫 度變形量之差、及第2閃爍器層26與第2光檢測器17之間之 第2溫度變形量之差中，使用於溫度變形量之差較大之一 方之接著劑之硬度低於使用於溫度變形量之差較小之一方 之接著劑之硬度。因此，在第！閃爍器層24與第i光檢測器 Π之間之第1溫度變形量之差、及第2閃爍器層26與第2光 134890.doc •15· 200925640 檢測器丨7之間之第2溫度變形量之差中，在溫度變形量之 差較小之一方自屬當然，即使在溫度變形量之差較大之一 方抑制閃爍器層與光檢測器之間之剝離而可避免因該等剝 離部分而使感度（亮度）顯著降低。 又，在X射線線型感測器1中，如圖2所示，第丨光檢測器 U之構成與第2光檢測器17之構成大致相同，故可謀求X射 線線型感測器1之製造成本之低廉化。另外，第1閃爍器層 〇 24之構成與第2閃爍器層26之構成相異，故可容易實現使 第1閃爍器層24吸收低能量範圍之X射線，使第2閃爍器層 26吸收高能量範圍之X射線。 又，在X射線線型感測器1中，如圖4所示，第丨光檢測部 16係在一面隔著第1間隙13，一面沿著特定方向被一維配 置之複數之第1光檢測元件14分別至少形成2個，而沿著特 疋方向被一維配置，第1接著劑25係被填充於第2閃爍器層 24與第1光檢測元件14之間及第！間隙13。同樣地，第2光 〇 檢測部23係在一面隔著第2間隙19，一面沿著特定方向被 一維配置之複數之第2光檢測元件21分別至少形成2個，而 沿著特定方向被一維配置；第2接著劑27係被填充於第2閃 * 爍器層26與第2光檢測元件21之間。藉此，可避免相鄰之 光檢測元件14、14彼此及相鄰之光檢測元件21、21彼此接 觸而導致該等之破損。 又’在X射線線型感測器1中，第1閃爍器層24與第2閃爍 器層26係以滑動方式接觸。藉此’即使第1閃爍器層μ與 第2閃爍器層26之間發生溫度變形量之差，也由於第1閃爍 134890.doc -16- 200925640 器層24與第2閃爍器層26可互相滑動，故可進一步更確實 地抑制第！閃爍器層24與第i光檢測器〗丨之剝離、及第2閃 爍器層26與第2光檢測器π之剝離。 本發明並不限疋於上述之實施型態。例如在上述實施型 態中，從製造成本之低廉化之觀點，使第丨光檢測器丨丨之 構成與第2光檢測器17之構成大致相同，但第1光檢測器11 之構成與第2光檢測器17之構成也可相異。 產業上之可利用性 依據本發明，可提高放射線檢測器之可靠性。 【圖式簡單說明】 圖1係適用本發明之放射線檢測器之一實施型態之X射線 線型感測器之非破壞檢查系統之構成圖。 圖2係圖1之X射線線型感測器之剖面圖。 圖3係圖2之X射線線型感測器之要部放大圖。 圖4係沿者圖3之X射線線塑感測器之ιγ_ιν線之剖面圖。 【主要元件符號說明】 1 X射線線型感測器 11 第1光檢測器 12 第1基板 13 第1間隙 14 第1光檢測元件 16 第1光檢測部 17 第2光檢測器 18 第2基板 134890.doc -17· 200925640 19 21 23 24 25 26 27 ❹ 第2間隙 第2光檢測元件 第2光檢測部 第1閃爍器層 第1接著劑 第2閃爍器層 第2接著劑 ❹ 134890.doc -18·200925640 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a dual energy type radiation detector. [Prior Art] A dual-energy type radiation detector is a device that detects radiation in a low energy range of a test object and radiation in a high energy range (for example, Patent Document 1). According to the radiation detector, a radiation image of a low energy range and a radiation image of a high energy range can be simultaneously obtained, and processed images subjected to specific processing (for example, weighted subtraction and superimposition, etc.) are formed based on the radiation images. In the non-destructive inspection of the inspection object conveyed by the conveyor belt or the like (that is, the non-destructive inspection on the line), the detection of the foreign matter, the measurement of the component distribution, the measurement of the weight, and the like can be realized with high precision. [Patent Document 1] Japanese Patent Publication No. Hei 5-68674. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The radiation detector of a dual-energy type is expected to prevent radiation images of a low-energy range and a high-energy range from being simultaneously acquired. Further reliability improvements such as shifting. Accordingly, the present invention has been made in view of such circumstances, and an object thereof is to provide a highly reliable radiation detector. Means for Solving the Problem In order to achieve the above object, a radiation detector according to the present invention is characterized in that it detects radiation of an i-th energy range incident from a front side and radiation of a second energy range, and includes: a scintillator layer extending along a specific direction 134890.doc 200925640 and converting radiation of the first energy range into light; the first photodetector having a one-dimensional arrangement along a specific direction and fixed to the first a first photodetecting unit that converts the light converted by the first scintillator layer into an electrical signal, and a first substrate on which the third light detecting unit is provided, and a second scintillator layer, Extending in a specific direction to contact the rear side of the J-scinter layer, and converting the radiation of the second energy range into light; and the second photodetector having a one-dimensional arrangement along a specific direction to fix a second photodetecting portion that converts the light converted by the second scintillator layer into an electrical signal, and a second substrate on which the second photodetecting portion is provided; the first flicker The thickness of the layer is thinner than the thickness of the second scintillator layer, and the first adhesive hardness used in the first scintillator layer and the first photodetector is fixed and used in the second scintillator layer and the second photodetector The second bond hardness is fixed in the i-th scintillator layer and The difference between the first temperature deformation amount between the second light detectors and the second temperature deformation amount between the second scintillator layer and the second photodetector is used for the difference in temperature deformation amount - The adhesive hardness of the crucible is lower than the hardness of the adhesive which is one of the smaller differences in the amount of deformation of the temperature. In the radiation detector, the first scintillator layer that converts the radiation of the second energy range into light is brought into contact with the second scintillator layer that converts the radiation of the second energy range into light, and is placed on the first side of the front side. The thicker layer of the scintillator layer is thinner than the thickness of the second scintillator layer disposed on the back side. By this, the amount of radiation in the ith energy range and the radiation in the second energy range incident from the front side at the same angle is shifted from the light-emitting position of the first scintillator layer to the light-emitting position of the second scintillator layer. It will become smaller. Therefore, it is possible to prevent the radiation image of the energy range of the first 134890.doc 200925640 1 and the radiation image of the second energy range from being shifted at the same time. Moreover, in this radiation detector _, used in the third 丨 scintillator layer and the first! The first adhesive hardness of the photodetector and the second adhesive hardness used for fixing the second scintillator layer and the second photodetector are between the second scintillator layer and the first photodetector. Among the difference between the first temperature deformation amount and the difference between the second temperature change amount between the second scintillator layer and the second photodetector, the adhesive hardness used for one of the large differences in the temperature deformation amount is lower than that of the use. The hardness of the adhesive which is one of the smaller differences in the amount of temperature change. Therefore, the temperature is deformed between the difference between the first temperature change amount between the first scintillator layer and the first photodetector and the difference between the second temperature change amount between the second scintillator layer and the second photodetector. One of the smaller straight differences is of course, even if the difference between the temperature deformation amounts is large, the peeling between the scintillator layer and the photodetector is suppressed, and the sensitivity (brightness) is remarkably lowered due to the peeling portions. . With the above, reliability can be improved in accordance with the radiation detector'. Further, the radiation in the first energy range means radiation having a specific range of energy, and the radiation in the second energy range means radiation having an energy different from the range of the specific range. In addition, the difference between the amount of temperature deformation between the scintillator layer and the photodetector means the difference between the amount of deformation of the scintillator layer and the amount of deformation of the photodetector (mainly the amount of expansion). The difference between the amount of deformation of the flasher layer and the amount of deformation of the photodetector (mainly the difference between the yields). In the radiation detector of the present invention, it is preferable that the configuration of the second photodetector is substantially the same as that of the second photodetector; and the configuration of the second scintillator layer is the same as that of the 134890.doc 200925640 2 scintillator layer. In this case, since the configuration of the light-correcting detector is substantially the same as that of the second photodetector, it is possible to reduce the manufacturing cost of the radiation detector. Further, it is possible to easily realize the incidence of radiation in the third energy range. In the scintillator layer, the radiation in the second energy range is incident on the second scintillator layer. In the radiation detector of the present invention, it is preferable that the third light detecting unit is provided in the specific direction while maintaining the first gap. At least two of each of the plurality of first light detecting elements of the dimensional arrangement are arranged in one dimension along a specific direction; the first adhesive is filled between the i-th scintillator layer and the ith photodetecting element and In the first light gap, the second light detecting unit is formed in a plurality of second light detecting elements arranged one-dimensionally in a specific direction while holding the second gap, thereby being one in the specific direction. Match The second second agent is filled between the second scintillator layer and the second photodetecting element. This shape prevents the adjacent photodetecting elements from coming into contact with each other and is damaged. In the radiation detector of the present invention Preferably, the second scintillator layer and the second flash layer are in sliding contact. In this case, even if a difference in temperature deformation occurs between the first scintillator layer and the second scintillator layer, the first scintillator Since the layer and the second scintillator layer also slide each other, peeling of the first scintillator layer from the first photodetector and separation of the second scintillator layer from the second photodetector can be more reliably suppressed. EFFECTS According to the present invention, the reliability of the radiation detector can be improved. Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings. 134890.doc 200925640 Also, in each figure, attached to the same or equivalent parts The same reference numerals are omitted, and the description of the non-destructive inspection system of the ray-ray type sensor which is one embodiment of the radiation detector of the present invention is shown in Fig. 1. The non-destructive inspection system is shown in Fig. 1. 50 series including moving The conveyor belt 51 that sends the inspection object S, the x-ray source 52 that emits the x-rays to the inspection object s conveyed by the conveyor belt 51, and the x-rays that detect the low energy range that penetrates the inspection object S (the second energy range) a dual-energy X-ray line sensor (one-dimensional sensor) that covers X-rays (radiation in the second energy range) in a high-energy range, covers the object S, the X-ray source 52, and An X-ray line sensor iix ray shielding box 53 and a computer 54 electrically connected to the X-ray line sensor! The computer 54 is based on an x-ray penetrating image and a high energy range which are simultaneously taken in a low energy range. The X-ray penetrates the image to create a processed image subjected to a specific process (for example, weighted subtraction, superimposition, etc.). Hereinafter, as the one-dimensional sensor, a linear sensor is exemplified, but it is not limited thereto. Other ones of the dimensional sensors that can be applied to the radiation detector of the present invention are, for example, TDI sensors and the like. According to the non-destructive inspection system 5, which is configured as described above, the inspection of the foreign matter such as the food and the electronic component can be performed by using a high-precision actual-current component distribution measurement, a weight measurement, or the like. 2 is a cross-sectional view of the X-ray line type sensor of FIG. 1, FIG. 3 is an enlarged view of the main part of the X-ray line type sensor of FIG. 2, and FIG. 4 is a 1V of the X-ray line type sensor of FIG. - IV line cutaway from the map. As shown in Figs. 2 to 4, the X-ray line type sensor 1 is a body 2 having a rectangular parallelepiped shape composed of aluminum. The mechanism body 2 134S90.doc 200925640 "the front side portion 3 and the rear side rear portion portion 4 having the configuration side (the X-ray source 52 side) are provided, and the opening portion 5 is provided in the front portion portion 3. On the front side of the mechanism body 2, the front side is installed The X-rays emitted from the X-ray source 52 pass through the slit structure 6. The slit structure 6 has a direction to be formed in a specific direction (in the case of the side, which is orthogonal to the direction in which the object S is conveyed) The second plate-shaped member 7 of the slit 7a and the second plate-shaped member 8 that supports the first plate-shaped member 7 from the rear side. The second plate-shaped member 7 is made of a metal ray (for example, lead) that shields X-rays. In the second plate member 8, the second plate member 8 is formed of a metal (for example, stainless steel) having a higher hardness than the metal used for the second plate member 7. The second plate member 8 is formed along the slit 7a. a wall portion 8a that is erected to the rear side with the side edge portion extending in the lateral direction and the other side portion. The wall portion 8a is disposed in the opening 5 provided in the front portion 3 of the mechanism body 2. The inner surface of the front portion 3 of the mechanism body 2 A first photodetector 丨J is mounted. The first photodetector 11 has a rectangular shape fixed to the front portion 3 of the mechanism body 2. a plurality of (for example, 8 to 14) first lights that are one-dimensionally arranged on the first substrate 12 in a predetermined direction along the first substrate 12 with a slight gap 丨3 therebetween The detecting element 14 and the amplifier circuit i 5 and the like disposed on the first substrate 12 and electrically connected to the respective photodetecting elements 丨 4 by wire bonding. In the incident direction of the x-ray in the first photodetecting element 14 (in the direction orthogonal to the direction in which the object 8 is transported and the direction in which the object is oriented), a plurality (for example, 128) of the plurality of photoelectric conversion elements are formed one-dimensionally in a specific direction so as to face the slit 7a. The light detecting unit 16. The second photodetector 17 is attached to the inner surface of the rear portion 4 of the mechanism body 2. The second photodetector π has a rectangular plate 134890.doc 200925640 fixed to the rear portion 4 of the mechanism body 2. The second substrate 18 is provided with a plurality of (for example, 8 to 14) second photodetecting elements 21 that are one-dimensionally arranged on the second substrate 18 along a specific direction with a slight gap 19 therebetween. And being disposed on the second substrate 18 and electrically connected to each light detection by wire bonding The amplifier circuit 22 of the element 21, etc. The second light detecting element 21' is formed in a one-dimensional manner in a specific direction (for example, 128 in the incident direction of the X-rays so as to face the first light detecting portion 16 respectively). The second photodetector 23 is a photodetector element. The configuration of the first photodetector 11 is substantially the same as that of the second photodetector 17. As the photodetecting elements 14 and 21, for example, CCD and CMOS are used. In the case of the front side, the one edge portion 12a of the first substrate 12 is located on the outer side of one of the edge portions 18a of the second substrate 18 in the direction orthogonal to the specific direction, and the second substrate The other edge portion 18b of 18 is located on the outer side of the other edge portion 12b of the first substrate i2. On the rear side of the first photodetecting element 14 and the first gap 13, a second scintillator Φ layer 24 which extends in a specific direction and absorbs X-rays in a low energy range and emits light is disposed. The first photodetecting portion 16 of the first photodetecting element 14 is fixed to the front side of the first scintillator layer 24 by the i-th adhesive 25, and converts the x-th scintillator layer into an electrical signal by the emitted light. The agent 25 may be filled not only between the second layer 24 and the first photodetecting element 14, but also may be filled in the gap 13. • The first scintillator layer 24 is integrally formed, for example, by a thickness of 0·; The width of the first scintillator layer 24 is viewed from the front side in a direction orthogonal to a specific direction and wider than the width of the slit 7a. On the front side of the second photodetecting element 21 and the second gap 19, a second scintillator 134890.doc 200925640 layer 26 which extends in a specific direction and absorbs X-rays in a high energy range and emits light is disposed. The second photodetecting portion 23 of the second photodetecting element 21 is fixed to the rear side of the second scintillator layer 26 by the second adhesive 27, and converts the light emitted from the second scintillator layer 26 into an electric signal. The second adhesive 27 may be filled not only in the second gap 19 but also between the second scintillator layer 26 and the second photodetecting element 21. The second scintillator layer 26 has a plurality of scintillator portions 28 that are arranged one-dimensionally along a specific direction in a direction in which the X-rays are incident with the second light detecting portion 23, and the cover is excluded from being fixed to X. The incident direction of the ray is opposite to the reflective layer 29 of the scintillator portion 28 other than the surface of the second light detecting portion 23. The scintillator portion 28 absorbs X-rays in a high energy range and emits light, and absorbs X-rays of a high energy range while maintaining high resolution, for example, by forming a bottom surface of 底面·4 mm×〇.4 mm by height of strontium tungstate. A square column of 2 mm. The reflective layer 29 is formed, for example, by attaching a metal light-shielding plate such as aluminum vapor deposition to the scintillator portion 28, and allows X-rays to pass through and reflect the first! The light emitted by the scintillator layer 24 and the light emitted by the scintillator portion 28. In this case, it is preferable that the reflective layer 29 is formed by covering the other surface of the scintillator portion 28 other than the surface of the fixed scintillator portion 28 and the second photodetecting portion 23 by the reflecting plate. In the reflective layer 29, as viewed from the front side, the thickness of the opposing portion 29a is thicker than the thickness of the other portions in the direction orthogonal to the specific direction. The reflective layer 29 may also be a reflective film formed by vapor-depositing aluminum on the scintillator portion 28. Further, the hardness of the first adhesive 25 used for fixing the first scintillator layer 24 and the first photodetector 、, and the hardness of the second scintillator layer % and the second photodetector 17 are used. Among the hardness of the second adhesive 27, the difference between the ninth scintillator layer 24 and the first photodetector η, and the second flicker 134890.doc 12 200925640 layer 26 and the second Among the difference in the second temperature deformation amount between the photodetectors 17, the hardness of the adhesive which is used for one of the large differences in the temperature deformation amount is lower than the hardness of the adhesive which is one of the smaller differences in the temperature deformation amount. . In the present embodiment, since the first scintillator material is different from the second scintillator material, the amount of temperature deformation differs. Here, as the hardness of the adhesive, for example, Shore hardness (JIS Z2246) can be applied. Further, the first scintillator layer 24 and the second scintillator layer 26 (providing the reflective layer 29) are in sliding contact. The interface between the first scintillator layer 24 and the reflective layer 29 and the interface between the second scintillation layer 26 〇, -曰 and the reflective layer 29 may be fixed by an adhesive, or only one of the interfaces may be fixed next to each other. . In the former case, the difference between the first temperature deformation amount between the first scintillator layer 24 and the first photodetector 11 and between the second scintillator layer 26 and the second photodetector 17 is the same as described above. Among the difference in the second temperature deformation amount, the hardness of the adhesive which is used in one of the large differences in the amount of temperature deformation is lower than the hardness of the adhesive which is one of the smaller differences in the amount of temperature deformation. The adhesive having a different hardness can be used in accordance with the difference in the amount of temperature deformation to prevent peeling at the interface between the reflective layer 29 and the scintillator and peeling off at the interface between the detector and the scintillator. Further, in the latter case, the first scintillator layer 24 and the second scintillator layer 26 can be slidably contacted via the reflective layer 29, so that peeling at the respective interfaces due to the difference in the amount of temperature deformation can be prevented. Further, the configuration of the first scintillator layer 24 and the second scintillator layer 26 can be made thinner than the thickness of the second scintillator layer 26 by making the thickness of the first scintillator layer 24 extremely thin. The composition is different. A connector 31 for electrical signal output is connected to the first substrate 12 of the first photodetector 11. The electric signal output from the first photodetector η is transmitted to the computer 54 via the connector 31, the A/D conversion/scan conversion circuit board 33, and the like. 134890.doc -13- 200925640 Similarly, the connector 32 for electrical signal output is connected to the second substrate 18 of the second photodetector 17. The electric signal output from the second photodetector 17 is transmitted to the computer 54 via the connector 32, the A/D conversion/scan conversion circuit board 34, and the like. The operation of the non-destructive inspection system 50 to which the X-ray line sensor 1 constructed as described above is applied will be described. The X-rays emitted from the X-ray source 52 and penetrating the test object S pass through the slit 7a Φ and between the wall portions 8a and 8a and penetrate the first photodetector 11 to enter the first scintillator layer 24. Incident at the first! In the xenon rays of the scintillator layer 24, the X-rays in the low energy range are absorbed by the first scintillator layer 24, and at this time, the light emitted from the first scintillator layer 24 is used by the first photodetecting portion of the first photodetector 11. 16 is converted into an electrical signal. This electric signal is transmitted to the computer 54 via the amplifier circuit 15, the connector 31, the A/D conversion/scan conversion circuit board 33, and the like of the first photodetector. An X-ray penetrating image of a low energy range is obtained by the computer 54. In the X-rays incident on the first scintillator layer 24, the rays in the high energy range penetrate the first scintillator layer 24 and the reflective layer 29 and are absorbed by the scintillator portion 28 of the second scintillator layer 26. The light emitted from the scintillator unit 28 is converted into an electrical signal by the second light detecting unit 23 of the second photodetector 17. This electric signal is transmitted to the computer 54 via the amplifier circuit 22 of the second photodetector 17, the connector 32, the A/D conversion/scanning conversion circuit board 34, and the like. An X-ray penetrating image of a high energy range is obtained by the computer 54. Moreover, the X-ray penetrating image of the low energy range and the X-ray penetrating image of the high energy range which are simultaneously obtained are subjected to specific processing (for example, weighted subtraction and superimposition) by the computer 54 to be processed into the object S to be inspected. image. In this way, the object S to be transported by the belt 51 can be transported at 134890.doc -14-200925640, and the detection of the foreign matter, the measurement of the component distribution, the measurement of the weight, and the like can be realized with high precision. As described above, in the X-ray line type sensor i, as shown in FIG. 4, the X-rays in the low energy range are absorbed and the light is emitted! The scintillator layer 24 is in contact with the second scintillator layer 26 that emits X-rays in a high energy range, and the thickness of the first scintillator layer 24 disposed on the front side is thinner than the second scintillator disposed on the rear side. The thickness of the layer 26 (less than the distance between the centers φ of the adjacent first photodetecting portions 16). Thereby, the X-rays of the low energy range incident from the front side at the same angle and the X-rays of the high energy range are offset from the light-emitting position P1 of the first scintillator layer 24 and the light-emitting position P2 of the second scintillator layer 26. The amount of shifting is reduced. Therefore, the light emitted by the first scintillator layer 24 and the light emitted by the second scintillator layer 26 can be reflected by the first light detecting unit 16 in the incident direction of the X-rays. The second light detecting unit 23 detects the second light detecting unit 23. Therefore, it is possible to prevent the X-ray penetrating image of the low moon & amount range and the X-ray penetrating image shift of the high energy range which are simultaneously obtained. Further, in the X-ray line sensor 1, the hardness of the first adhesive 25 used for fixing the i-th scintillator layer 24 and the first photodetector 11 and the second scintillator layer 26 are used. The difference between the first temperature deformation amount between the first scintillator layer 24 and the first photodetector 11 and the second scintillator layer 26 in the hardness of the second adhesive 27 fixed by the second photodetector 17 Among the difference between the second temperature deformation amount and the second photodetector 17, the hardness of the adhesive which is used for one of the large differences in the temperature deformation amount is lower than the difference between the temperature deformation amount and the smaller one. The hardness of the agent. So in the first! The difference between the first temperature deformation amount between the scintillator layer 24 and the i-th photodetector 、 and the second temperature between the second scintillator layer 26 and the second light 134890.doc •15·200925640 detector 丨7 Among the differences in the amount of deformation, the difference in the amount of deformation of the temperature is a small one. Of course, even if the difference in the amount of temperature deformation is large, the peeling between the scintillator layer and the photodetector can be suppressed, and the peeling can be avoided. Partly, the sensitivity (brightness) is significantly reduced. Further, in the X-ray line sensor 1, as shown in FIG. 2, the configuration of the second light detector U is substantially the same as that of the second photodetector 17, so that the X-ray line sensor 1 can be manufactured. The cost is low. Further, since the configuration of the first scintillator layer 24 is different from the configuration of the second scintillator layer 26, it is possible to easily absorb the X-rays in the low energy range and absorb the second scintillator layer 26 in the first scintillator layer 24. High energy range X-rays. Further, in the X-ray line sensor 1, as shown in FIG. 4, the first light detecting unit 16 is configured to have a plurality of first light detections that are one-dimensionally arranged in a specific direction with the first gap 13 interposed therebetween. The elements 14 are each formed at least two, and are arranged one-dimensionally along the characteristic direction, and the first adhesive 25 is filled between the second scintillator layer 24 and the first photodetecting element 14 and the first! Clearance 13. Similarly, the second aperture detecting unit 23 is formed by forming at least two of the plurality of second photodetecting elements 21 that are one-dimensionally arranged in a specific direction with the second gap 19 interposed therebetween, and is formed along a specific direction. In the one-dimensional arrangement, the second adhesive 27 is filled between the second flasher layer 26 and the second photodetecting element 21. Thereby, it is possible to prevent the adjacent photodetecting elements 14, 14 and the adjacent photodetecting elements 21, 21 from coming into contact with each other to cause such damage. Further, in the X-ray line sensor 1, the first scintillator layer 24 and the second scintillator layer 26 are in sliding contact. Therefore, even if the difference in temperature deformation occurs between the first scintillator layer μ and the second scintillator layer 26, the first scintillation 134890.doc -16 - 200925640 layer 24 and the second scintillator layer 26 can mutually Sliding, so you can suppress the number more surely! The scintillator layer 24 is peeled off from the i-th photodetector and the second scintillator layer 26 is separated from the second photodetector π. The present invention is not limited to the above embodiments. For example, in the above-described embodiment, the configuration of the second photodetector 大致 is substantially the same as the configuration of the second photodetector 17 from the viewpoint of reduction in manufacturing cost, but the configuration of the first photodetector 11 and the first 2 The configuration of the photodetector 17 can also be different. Industrial Applicability According to the present invention, the reliability of the radiation detector can be improved. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a configuration diagram of a non-destructive inspection system of an X-ray line type sensor to which one embodiment of a radiation detector of the present invention is applied. 2 is a cross-sectional view of the X-ray line sensor of FIG. 1. FIG. 3 is an enlarged view of an essential part of the X-ray line type sensor of FIG. 2. FIG. Figure 4 is a cross-sectional view of the ιγ_ιν line of the X-ray line plastic sensor of Figure 3. [Description of main component symbols] 1 X-ray line sensor 11 First photodetector 12 First substrate 13 First gap 14 First photodetecting element 16 First photodetecting section 17 Second photodetector 18 Second substrate 134890 .doc -17· 200925640 19 21 23 24 25 26 27 ❹ Second gap Second light detecting element Second light detecting unit First scintillator layer First adhesive Second scintillator layer Second adhesive ❹ 134890.doc - 18·