200848190 九、發明說明： 【發明所屬之技術領域】 本發明係關於對加工對象物體、特別是具有如同基板 之平板狀的物體，採用對此物體而言是透明之波長的超短 脈波雷射來效率且高品質地進行加工的方法。 本發明係另外關於一種構造體之使用雷射光的分割方 法，而該構造體具有平行配置至少2片基板且在其間插入 有間隔物之構造且具有多層基板。適合於分割使用液晶顯 示面板、電漿顯示面板等之玻璃基板的平板顯示面板。 【先前技術】 在電子工業中，CPU和DRAM、SRAM等的半導體裝置 之微細化係逐年發展，隨之而來就是謀求內部的電路的高 度積體化。這些裝置的構造係在矽晶圓等的半導體基板上 以高度整合的電路圖案所形成。爲了從半導體晶圓中獲得 多數的晶片，所以必須使分割晶片所需要的面積最小化。 爲此，期望在劃線步驟中，加工除去物之飛散較少。在液 晶顯示器等的玻璃基板之切斷步驟中，期待能正確地以既 定尺寸來進行分割。在些分割步驟中，必須以不會對加工 部周圍造成熱損傷或機械損傷的條件下來進行除去加工， 因此使用奈秒脈波以下之狹窄的脈波。在使用超短脈波雷 射的加工中，習知技術是能減低熱加工變質層的發生、或 即使對此波長而言爲透明的材料，也能藉由以多光子吸收 爲代表的非線形光吸收來進行加工者。 使用超短脈波振動之雷射光的透明體之加工方法係由 200848190 於專利文獻2而爲眾所皆知，此外，聚光於基板的內面而 對被加工物體施行加工雷射一事係被記載於專利文獻3。 因爲照射表面吸收很大的UV雷射光時，從照射表面 產生電漿，因此雷射光被吸收，所以雷射能量的利用效率 下降的同時，藉由來自電漿的次要放射而照射周圍，也有 影響周圍之元件特性的時候。因此，作爲半導體基板、薄 膜電晶體用之玻璃基板等分割成既定大小的劃線步驟，在 專利文獻3中則記載了從與劃入切縫的面（加工面）相反的 面將焦點對焦於加工面而照射雷射光，藉以對加工面加工 切縫的方法。在此方法中，因爲使雷射光聚光於與雷射光 入射側相反的面，並進行雷射剝離加工，所以會有無法充 分獲得加工溝槽之深度的缺點。當無法充分獲得溝槽深度 時，爲了沿著該溝槽而分離，只有增大爲了折斷而需要的 折曲力，且有時也未沿著切割線而分割。如果加工溝槽的 深度夠深的話，只要少許的應力就能沿著切割線進行分割。 另一方面，在液晶顯示裝置的製造中，有將構成面板 的大型玻璃基板進行切斷之步驟。液晶顯示裝置的面板面 係平行配置至少2片玻璃板，在其間設置顯示裝置所必需 的彩色濾波片或液晶、薄膜電晶體（TFT)、控制電極等的配 線。這些玻璃板係在製造步驟中使用比最終之顯示裝置的 尺吋還要大的玻璃而同時製造多數片顯示裝置，藉以同時 進行多數片顯示面板的製造，以謀求效率化。因此，最後 必須配合製品的面板尺寸，而從形成有很大之多數片面板 的大型玻璃基板而個別切斷。以往的玻璃板之切斷方法係 200848190 利用鑽石刃、超硬刃等之刀刃等而沿著所需之切斷線而刻 入玻璃表面並設置切割線，爾後在直角方向上對該切割線 施加應力並沿著該切割線來進行破斷並分離的方法，或者 沿著所需之切斷線來將雷射光線進行掃描、加熱，並使熱 應力發生在玻璃基板上，從此部分進行破斷分割的方法 等，在此情況下，使用吸收率很大的雷射波長來照射玻璃 板，使局部加熱，爾後進行強制冷卻，從照射位置進行分 割。 在2片玻璃板之間插入顯示要件並以密封劑來封止玻 璃周圍以後分割成個別的顯示面板時，實施從2片重疊之 玻璃板的兩面各針對單一側進行劃線，爾後進行切斷的方 法。這因爲以鑽石刃刻入，所以在單一面上進行劃線加工 以後，使2層玻璃板表裏反轉並在剩餘的一面上施行劃線 以後，一起分割2片重疊之玻璃板的方法。近幾年的市場 由於顯示面板之尺寸大型化的傾向，而用於面板的玻璃尺 寸有越來越大的趨勢，因此，製造用大型玻璃板的搬運裝 置會複雜化，反轉機構之規模變得龐大且成爲高價的設 備。因此，玻璃板不反轉而從單一側進行劃線的方法係成 爲實用上有效的製造方法。在專利文獻4中已揭露從2片 重疊之玻璃的單一側對各玻璃表面照射紫外線雷射，在2 片重疊構造之雙方玻璃板的表面上施行劃線的提案。此方 法係在玻璃對雷射光而言爲具有透明性，從上部玻璃側照 射雷射光的情況下，紫外線雷射光通過上部玻璃而到達下 部玻璃表面則成了必要條件。因此，有用於下部玻璃之上 200848190 面和上部玻璃板之內面的金屬配線等的金屬膜時，藉由照 射雷射光而金屬膜破損，或是被金屬膜遮蔽而變得很難將 雷射射束導引至下部玻璃。如同這、般在2片玻璃之間有介 入物的情況下，以來自單一側面的雷射射束照射而通過上 部玻璃板，並對下部的玻璃板進行劃線是很困難的。 [專利文獻1]美國再發行專利第3 7 5 85號說明書 [專利文獻2]特開2002-205 1 79號公報 [專利文獻3]特開2004- 3 5 1 466號公報 [專利文獻4]特開2005 - 1 3 2694號公報 [專利文獻5]特開平8 -645 5 6號公報 【發明内容】 [本發明欲解決的課題] 欲解決的課題在於使用對加工物體而言爲透明之波長 的超短脈波雷射光，而對加工物體在與入射側相反之側（反 面）實施高精度加工的時候，於加工物體內部在雷射光行進 方向上，以涵蓋比聚光點的焦點深度還要長之範圍來設置 小直徑的射束。 另外，進一步的課題在於提供一種方法，其能僅從具 有多層基板的構造體之一個基板面側照射雷射光並分割該 構造體。另外，提供一種分割方法，其在2片基板之間具 有金屬薄膜的構造中，使金屬薄膜露出。另外，提供一種 構造體的分割方法，其在2片基板之間具有封止部，並在 封止部內側形成電子零件的情況下，能將配線從該電子零 件導出至封止部外側。 200848190 [解決罰 使 加工寬 的剝離 爲 特徵爲 被加工 第1面 Ο 的射束 之間， 傳播所 成聚光 空洞或 方向的 另 / 交點附 i^./ 造。另 成前述 聚光通 面。另 工物體 體內部 比通常 另 [題的手段] 自集束作用發生於加工物體內部，並縮小雷射光的 度，能將雷射光之行進方向的加工距離作成比通常 加工明顯還要大，藉以解決上述課題。 了解決上述課題，本發明係一種雷射加工方法，其 :透過聚光手段而使對於具有第1面以及第2面之 物體而言爲透明之波長的超短脈波雷射光聚光，從 之側照射前述雷射光，使得將被聚光之前述雷射光 腰部位置形成在前述被加工物體的第1面和第2面 藉由前述被加工物體內部之超短脈波高峰値雷射光 造成的自集束作用，在前述雷射光的行進方向上形 通道，藉以在前述聚光通道部中形成達到第2面的 者達到第2面附近的空洞。藉此，能將雷射光行進 加工距離作成比通常的剝離加工還要大。 外，特徵爲形成前述雷射光行進方向之與第2面的 近之隆起比周邊表面還要高且機械強度弱之隆起構 外，特徵爲形成前述聚光通道直至第2面，藉以形 空洞直至第2面。另外，特徵爲從第1面形成前述 道直至第2面，藉以從第1面形成前述空洞直至第2 外，特徵爲從第1面形成前述聚光通道直至前述加 內部，藉以從第1面形成前述空洞直至前述加工物 。藉由各個，能將雷射光行進方向的加工距離作成 的剝離加工還要大。 外，特徵爲前述被加工物體係相同種類或者相異種 -10 - 200848190 類之材料的平板狀物體重疊2片以上的多層構造。藉 能同時加工2片以上的物體。 另外，特徵爲在前述被加工物體之第1面側上設 於前述雷射波長而言爲透明的其他物體，藉以變更產 前述被加工物體的自集束作用所造成之前述聚光通道 度。藉此，能調整雷射光行進方向的加工距離。 另外，特徵爲在前述被加工物體之第1面側上設 於前述雷射波長而言爲透明的其他物體，藉以使產生 述被加工物體的自集束作用所造成之前述聚光通道到 1面。藉此，能加工直至基板的正面。 另外，特徵爲沿著切斷的方向並以任意速度’來 前述聚光手段而聚光於前述被加工物體內部的前述超 波雷射光相對移動，藉以設置前述空洞在空間上的重 另外，特徵爲沿著切斷的方向並以任意速度，來使由 聚光手段而聚光於前述被加工物體內部的前述超短脈 射光相對移動，藉以將前述空洞設置成在空間上分離 由各個，能在被加工物體上製作切斷線，並且因爲雷 行進方向的加工距離大，所以能以少量的彎曲應力來 切斷。 另外，特徵爲前述被加工物體係做成平面狀的物 使前述超短脈波雷射的聚光雷射光從前述被加工物體 1面的法線方向以一定的角度而傾斜並入射，使前述 雷射光具有前述角度的傾斜並旋轉，以進行圓形的 並使加工面傾斜來進行加工。藉此，能作成圓形的切 此， 置對 生於 的長 置對 於前 達第 使由 短脈 疊。 前述 波雷 。藉 射光 進行 體， 之第 聚光 描， 訢線。 -11- 200848190 另外，特徵爲具有進行複數次前述相對移動並 對移動之間變更前述雷射光之射束腰部之高度的操 此，於被加工物體中形成空洞達到深部，所以能施 分切斷到完全切斷的加工。 另一方面，本發明係一種被加工物體的切斷方 特徵爲：在對前述記載的被加工物體進行雷射加工 沿著加工部分以少量的應力來切斷前述被.加工物體 此，能正確地沿著切斷線來分割被加工物體。 另外，一種液晶顯示面板的基板切斷方法，其 具有：液晶顯示面板具有第1基板和第2基板的積ϋ 於第2片基板之第1基板側的正面所搭載之零件上 黏著或者貼緊對前述雷射波長而言爲不透明的材料 1基板側照射雷射，使得在第1基板內形成射束腰i 驟，在前述照射時，避免通過第1基板的雷射光對 件造成損害。 另外，在本發明中，提供第1以及第2基板與 間部分地包夾間隔物而平行配置之構造體的分割方 法如下所述。 具有：透過聚光手段而使具有對第1以及第2 言爲透明之波長的脈波寬度lOOps以下之超短脈波 光，並從第1基板外側進行照射，使得射束腰部位 成於任一個基板的表面或者內部，由於該超短脈波 播所造成之自集束作用而在該超短脈波雷射光之行 上形成聚光通道，藉以在該聚光通道部中形成空洞 在各相 作。藉 行從部 法，其 以後， 。藉 特徵爲 構造， 塗佈、 ，從第 部之步 前述零 在其之 法。方 基板而 雷射聚 置會形 雷射傳 進方向 ，使該 -12- 200848190 超短脈波雷射光相對移動，以形成切割線的切割線形成步 驟；以及爾後沿著該切割線來切斷形成有前述切割線之基 板的基板切斷步驟。從具有多層基板，特別是2層基板的 構造體之僅一方的面照射雷射射束並進行加工’所以能謀 求設備的簡化。 另外，本發明之特徵爲進一步在前述切割線形成步驟 中具有下述步驟A，在該基板切斷步驟中具有下述步驟C。 另外，本發明之特徵爲在前述切割線形成步驟中具有 下述A及B之步驟，以A、B或者是B、A的順序來實施， 在前述基板切斷步驟中具有下述C及D之步驟，以C、D 的順序來實施。藉此，因爲能形成不面對第1基板的第2 基板之部分，所以變得能在第2基板內側之面上或者在其 面之上部形成控制電路，能謀求液晶面板等顯示面板的薄 型化。 步驟A :以使該射束腰部透過第1基板而來到第2基 板的方式來使該超短脈波雷射聚光，並在第2基板上形成 第1切割線，進一步以使射束腰部位於第1基板的方式來 進行聚光，並在和第1切割線相同之平面位置上使該超短 脈波雷射相對移動，藉以在第1基板上形成第2切割線 步驟B :以使前述射束腰部位於第1基板的方式來使 前述超短脈波雷射聚光，以與第2切割線隔開既定距離而 平行地使前述超短脈波雷射光相對移動，藉以在第1基板 上形成第3切割線。 步驟C :沿著第1以及第2切割線來切斷第2以及第1 -13- 200848190 基板，藉以分割該構造體。 步驟D :沿著第3切割線來切斷第1 基板的第2切割線除去第3切割線的部分 此外，前述構造體係在第2基板之面 面上具有金屬薄膜，此外，前述間隔物係 成由第1以及第2基板與該封止材料所包 空間形成電子零件，前述金屬薄膜係存在 側和外側，且前述金屬薄膜係電氣連接於 Γ 因爲金屬薄膜橫跨封止體，此金屬薄膜係 在被封止體內部的該電子零件，所以此金 線而使用，在封止部外側將該電子零件進 此外，本發明係一種雷射加工裝置， 超短脈波雷射產生裝置；旋轉鏡，使從前 產生裝置產生的脈波雷射光以一定的角度 光透鏡，以使被偏向之前述脈波雷射光的 致的方式，與前述旋轉鏡同步並旋轉，焦 Ρ 描繪圓軌跡；以及使前述聚光透鏡沿著前 動的手段與加工物體搭載手段。藉此構成 將切斷線劃入被加工物體，進一步沿著切 形。 [發明的效果] 由於自集束作用的產生，在雷射光的 光通道係形成爲比射束腰部涵蓋更長的距 部分中形成空洞，在聚光通道部中形成達 基板，藉以從第1 〇 對第1基板側的 封止材料，並構 圍的空間，在該 爲橫跨該空間內 該電子零件時， 電氣連接於形成 屬薄膜能作爲配 行配線。 其特徵爲具有： 述超短脈波雷射 偏向並旋轉；聚 光路徑和光軸一 點會藉由旋轉來 述光軸方向而移 ，能以圓形方式 斷線來切斷成圓 行進方向上，聚 離，在聚光通道 到第2面的空洞 -14- 200848190 或者到達第2面附近的空洞，所以雷射光行進方向的加工 距離會作成比通常的剝離加工還要大。 【實施方式】 以下，說明本發明的實施形態。第1圖係表示本發明 之加工方法的實施形態的圖。藉由準直儀（未圖示）來使從 超短脈波雷射產生裝置1輸出之作爲超短脈波1 5的雷射光 (射束）2成平行，入射於聚光透鏡3等的聚光手段，作爲集 束雷射射束5而從被加工物體4之正面45入射。超短脈波 的雷射就是脈波寬度lOOps以內的雷射。作爲前述被加工 物體4的範例，則舉出玻璃、藍寶石、或者鑽石等之介電 體材料、或者矽或氮化鎵等的半導體材料。另外，被加工 物體4較爲適當係基板等之平板狀物體。因此，以下，有 時也將被加工物體4稱爲基板。雷射則挑選成爲對於被加 工物體而言爲透明之波長者。在此，透明並不一定侷限於 100 %使光透過的意義。也包含能透過某種程度之雷射光的 情形。例如，當以被加工物體作爲矽基板時，只要是波長 爲1 # m至2 // m的紅外區域即可。作爲雷射媒體的範例， 除了鈦藍寶石結晶（中心波長7 80nm)以外，還舉出添加餌之 纖維、添加鏡之纖維、Nd : YAG結晶、Nd : YV〇4結晶、 Nd : YLF結晶等。另外，在以玻璃基板作爲被加工物體的 情況下，雷射媒體係較佳是作爲鈦藍寶石結晶（中心波長 7 8 0 n m) 〇 此外，正面就是雷射光所入射之側的面，而與其相反 之側的面則稱爲反面。集束雷射射束5在被加工物體4的 -15· 200848190 內部形成作爲聚光點的射束腰部6。將集束雷射射束5照 射於被加工物體4，將此射束腰部6對準於從正面45到反 面44之被加工物體內部的適當位置而照射射束。 調整集束雷射射束5之能量、波長以及脈波寬度及前 述聚光透鏡3的焦點距離或聚光位置，在被加工物體4的 內部以高功率密度來將超短脈波聚光，從射束腰部6朝著 行進方向發生根據克爾效應的自集束作用，形成具有射束 腰部6程度之直徑的細射束之傳播通道8。在第1圖中，以 在被加工物體4之厚度7內部，從反面44向正面方向而形 成雷射射束腰部6的方式來設定照射條件時，入射的集束 雷射射束5係從射束腰部6在功率密度微弱而未發生由克 爾效應引起之自集束作用的區域中，一旦在因射束腰部所 聚光後，作爲發散性之射束1 0而傳播，但出現克爾效應之 非常高功率密度的聚光點形成於射束腰部時，細線狀之通 道8會沿著形成爲涵蓋距離1 3，被加工物體內部之通道8 而傳播，一邊消耗雷射射束能量一邊朝著反面44前進，能 在反面44維持著可維持克爾效應程度的能量時，位於通道 8的被加工物體之一部分會由於衝擊波而被周圍壓縮，結 果會形成細的空洞，剩餘部份會從反面而被排出至外部， 或者在未被排出時，就在反面44上形成隆起，細長的空洞 會沿著通道8而被形成涵蓋從射束腰部6至反面44爲止的 距離1 4。到達了反面44還未被被加工物體所吸收之射束會 因爲不再因自集束作用而被封閉，所以會作爲發散性射束 1 1而被放出。 -16- 200848190 作爲使由在被加工物體中之自集束作用所引起的射束 之聚光效果變得明顯的條件，會有根據文獻〗·H. Marburger， Prog. Quantum Electron.，Vol.4,ρ.35 (1975)·，以被稱爲自集 束之臨界閩値功率P〃的數式1所表示的指標。 [數式1]200848190 IX. Description of the Invention: [Technical Field] The present invention relates to an ultrashort pulse laser having a wavelength transparent to a workpiece, particularly an object having a flat shape like a substrate. A method of processing efficiently and with high quality. The present invention further relates to a method of dividing a structure using laser light, which has a configuration in which at least two substrates are arranged in parallel with a spacer interposed therebetween and has a multilayer substrate. It is suitable for dividing a flat panel display panel using a glass substrate such as a liquid crystal display panel or a plasma display panel. [Prior Art] In the electronics industry, the miniaturization of semiconductor devices such as CPUs, DRAMs, and SRAMs has been progressing year by year, and accordingly, the internal circuits have been highly integrated. The structure of these devices is formed by a highly integrated circuit pattern on a semiconductor substrate such as a germanium wafer. In order to obtain a large number of wafers from a semiconductor wafer, it is necessary to minimize the area required to divide the wafer. For this reason, it is desirable that the scattering of the processed removal is less in the scribing step. In the cutting step of the glass substrate such as a liquid crystal display, it is expected that the division can be performed accurately with a predetermined size. In some of the dividing steps, it is necessary to carry out the removal processing without causing thermal damage or mechanical damage to the periphery of the processing portion, and therefore a narrow pulse wave of not more than a nanosecond pulse wave is used. In the processing using ultrashort pulse laser, the conventional technique is to reduce the occurrence of the hot work metamorphic layer, or even a material transparent to this wavelength, and can be represented by a non-linear light represented by multiphoton absorption. Absorbed for processing. A method of processing a transparent body using laser light of ultrashort pulse wave vibration is known from Patent Document 2, 200848190, and a laser beam is processed on an inner surface of a substrate to process a processed object. It is described in Patent Document 3. Since the irradiated surface absorbs a large amount of UV laser light, plasma is generated from the irradiated surface, so that the laser light is absorbed, so that the utilization efficiency of the laser energy is lowered, and the surrounding radiation is irradiated by the secondary radiation from the plasma. When it comes to the characteristics of the surrounding components. Therefore, the semiconductor substrate, the glass substrate for a thin film transistor, and the like are divided into a scribe line step of a predetermined size, and Patent Document 3 describes that the focus is focused on the surface opposite to the surface (machined surface) that is cut into the slit. The method of processing the surface and irradiating the laser light to process the slit on the machined surface. In this method, since the laser light is condensed on the surface opposite to the incident side of the laser light and subjected to laser lift-off processing, there is a disadvantage that the depth of the processing groove cannot be sufficiently obtained. When the groove depth is not sufficiently obtained, in order to separate along the groove, only the bending force required for breaking is increased, and sometimes it is not divided along the cutting line. If the depth of the groove is deep enough, a small amount of stress can be divided along the cutting line. On the other hand, in the manufacture of a liquid crystal display device, there is a step of cutting a large glass substrate constituting the panel. At least two glass plates are arranged in parallel on the panel surface of the liquid crystal display device, and a color filter or a wiring for liquid crystal, thin film transistor (TFT), control electrode, or the like necessary for the display device is provided therebetween. In the glass sheet, a plurality of sheets of display devices are simultaneously produced by using a glass larger than the size of the final display device in the manufacturing process, whereby a plurality of sheets of display panels are simultaneously manufactured for efficiency. Therefore, it is necessary to finally cut the panel size of the product and to cut it from a large glass substrate on which a large number of sheets are formed. The conventional method for cutting a glass sheet is 200848190. A blade such as a diamond blade or a super-hard blade is used to cut a glass surface along a desired cutting line, and a cutting line is set, and then the cutting line is applied in a right angle direction. The method of breaking and separating the stress along the cutting line, or scanning and heating the laser light along the required cutting line, and causing thermal stress to occur on the glass substrate, and breaking from this part In this case, the glass plate is irradiated with a laser wavelength having a large absorptivity, localized heating is performed, and then forced cooling is performed to divide from the irradiation position. When a display element is inserted between two glass plates and the periphery of the glass is sealed with a sealant, and then divided into individual display panels, the two sides of the two overlapping glass plates are each scribed to a single side, and then cut. Methods. This is because the diamond blade is engraved, so after the scribing process is performed on a single surface, the two glass plates are reversed and the remaining one surface is subjected to scribing, and then the two overlapping glass plates are divided together. In recent years, due to the tendency of the display panel to be enlarged in size, the size of the glass used for the panel has become larger and larger. Therefore, the handling device for manufacturing large-sized glass plates is complicated, and the scale of the reversing mechanism is changed. It is huge and has become a high-priced device. Therefore, the method of scribing from a single side without inverting the glass sheet is a practical and effective manufacturing method. Patent Document 4 discloses a proposal of irradiating an ultraviolet ray on each glass surface from a single side of two overlapping glass sheets, and performing scribing on the surfaces of both glass sheets of the two overlapping structures. In the case where the glass is transparent to laser light and the laser light is irradiated from the upper glass side, it is necessary to pass the ultraviolet laser light through the upper glass to the lower glass surface. Therefore, when there is a metal film such as a metal wiring on the lower surface of the lower glass and the inner surface of the upper glass plate, the metal film is damaged by the irradiation of the laser light, or is shielded by the metal film, making it difficult to irradiate the laser. The beam is directed to the lower glass. As is the case with an intervening material between two sheets of glass, it is difficult to illuminate the lower glass sheet by irradiating the laser beam from a single side through the upper glass sheet. [Patent Document 1] Japanese Patent Laid-Open No. Hei. No. Hei. No. 2004-205 No. Hei. [Problem to be Solved by the Invention] The problem to be solved is to use a wavelength which is transparent to a processed object, and a problem to be solved by the present invention is disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. Ultra-short pulse laser light, and when the processed object is processed with high precision on the opposite side (reverse side) from the incident side, in the direction of the laser light traveling inside the processed object, to cover the depth of focus of the concentrated spot To lengthen the range to set the beam of small diameter. Further, a further object is to provide a method of irradiating laser light from only one substrate surface side of a structure having a multilayer substrate and dividing the structure. Further, a division method is provided in which a metal thin film is exposed in a structure having a metal thin film between two substrates. Further, a method of dividing a structure is provided which has a sealing portion between two substrates, and when an electronic component is formed inside the sealing portion, the wiring can be led out from the electronic component to the outside of the sealing portion. 200848190 [Resolve the penalty for wide stripping of the processing. It is characterized by the intersection of the beam of the first surface 被, the convergence of the condensed cavity or the direction of the other / intersection with i^./. In addition, the aforementioned concentrating surface is formed. The internal working body of the working object is more than the usual means [self-bundling] occurs in the inside of the processing object, and the degree of laser light is reduced, and the processing distance of the traveling direction of the laser light can be made larger than the normal processing, thereby solving The above issues. In order to solve the above problems, the present invention is directed to a laser processing method for concentrating ultrashort pulse laser light having a wavelength transparent to an object having a first surface and a second surface by a condensing means. Irradiating the laser light to the side so that the position of the laser beam waist to be concentrated is formed on the first surface and the second surface of the object to be processed by the ultrashort pulse peak 値 laser light inside the object to be processed The self-bundling action forms a channel in the traveling direction of the laser light, whereby a hole reaching the second surface is formed in the concentrating channel portion to reach a cavity near the second surface. Thereby, the laser light traveling distance can be made larger than the normal peeling process. In addition, it is characterized in that the ridge of the laser light traveling direction and the second surface are higher than the peripheral surface and the mechanical strength is weak, and the concentrating channel is formed to the second surface, thereby forming a cavity until the first 2 sides. Further, it is characterized in that the first surface is formed from the first surface to the second surface, and the cavity is formed from the first surface to the second surface, and the light collecting passage is formed from the first surface to the inside of the first surface, whereby the first surface is formed from the first surface. The aforementioned cavity is formed up to the aforementioned workpiece. By each, the peeling process capable of making the processing distance in the traveling direction of the laser light is larger. Further, it is characterized in that the flat object of the same type or the different type of material of the above-mentioned workpiece system overlaps two or more multilayer structures. By processing more than 2 objects at the same time. Further, it is characterized in that the first object side of the object to be processed is provided with another object which is transparent to the laser wavelength, thereby changing the degree of the condensing channel caused by the self-harvesting action of the object to be processed. Thereby, the processing distance of the direction in which the laser light travels can be adjusted. Further, the object is characterized in that the first object side of the object to be processed is provided on the first object side of the object to be transparent, and the other object is transparent, so that the condensing channel caused by the self-bundling action of the object to be processed is generated to one side. . Thereby, it can process to the front surface of a board|substrate. Further, it is characterized in that the super-wave laser light that is condensed in the inside of the object to be processed is relatively moved along the cutting direction and at an arbitrary speed 'the light collecting means, thereby providing the spatial weight of the cavity, and the feature The aforementioned ultrashort pulse light that is condensed by the concentrating means and condensed inside the object to be processed is relatively moved along the cutting direction and at an arbitrary speed, thereby arranging the holes to be spatially separated by each The cutting line is formed on the object to be processed, and since the machining distance in the traveling direction of the lightning is large, it can be cut with a small amount of bending stress. Further, the object to be processed is formed into a planar shape, and the condensed laser light of the ultrashort pulse laser is inclined at a constant angle from the normal direction of the surface of the workpiece 1 to be incident thereon. The laser light is tilted and rotated with the aforementioned angle to perform circular processing and tilting the processed surface for processing. Thereby, a circular cut can be made, and the paired pair is set to the short-term stack. The aforementioned Borre. The light is used to carry out the body, the first light collection, the Xin line. -11- 200848190 Further, it is characterized in that the above-described relative movement is performed plural times and the height of the beam waist of the laser light is changed between the movements, and a cavity is formed in the object to be deep, so that the cutting can be performed. Broken to complete cutting process. On the other hand, the present invention is characterized in that the cut-off side of the object to be processed is characterized in that the object to be processed is subjected to laser processing to cut the workpiece to be processed with a small amount of stress along the processed portion. The ground divides the object to be processed along the cutting line. Moreover, a method of cutting a substrate of a liquid crystal display panel has a liquid crystal display panel in which a first substrate and a second substrate are adhered to or adhered to a part mounted on a front surface of a first substrate side of the second substrate. The substrate side of the material 1 which is opaque to the laser wavelength is irradiated with a laser beam so that the beam waist is formed in the first substrate, and the laser light passing through the first substrate is prevented from being damaged during the irradiation. Further, in the present invention, the method of dividing the first and second substrates and the structure in which the spacers are partially interposed and arranged in parallel is as follows. The ultrashort pulse light having a pulse wave width of 100 ps or less having a wavelength transparent to the first and second words is irradiated from the outside of the first substrate by the condensing means, so that the beam waist portion is formed a surface of the substrate or a portion of the substrate, which forms a concentrating channel on the line of the ultrashort pulse laser light due to self-bundling caused by the ultrashort pulse wave, thereby forming a cavity in the concentrating channel portion in each phase . Borrowing from the Ministry of Law, and later, . Borrowing features are constructed, coated, and stepped from the first step in the above zero. The square substrate and the laser concentrating will shape the laser transmission direction, so that the -12-200848190 ultrashort pulse laser light relatively moves to form a cutting line forming step of the cutting line; and then cut along the cutting line A substrate cutting step of forming a substrate of the aforementioned dicing line. The laser beam is irradiated from only one of the structures having the multilayer substrate, particularly the two-layer substrate, and processed. Therefore, simplification of the apparatus can be achieved. Further, the present invention is characterized in that it further has the following step A in the dicing line forming step, and has the following step C in the substrate cutting step. Further, the present invention is characterized in that the steps of forming A and B described below in the cutting line forming step are carried out in the order of A, B or B, A, and have the following C and D in the substrate cutting step. The steps are implemented in the order of C and D. In this way, since the portion of the second substrate that does not face the first substrate can be formed, the control circuit can be formed on the inner surface of the second substrate or on the upper surface of the second substrate, and the display panel such as the liquid crystal panel can be made thin. Chemical. Step A: concentrating the ultrashort pulse laser light so that the beam waist passes through the first substrate and reaches the second substrate, and forms a first cutting line on the second substrate, and further emits the light. The waist portion is condensed so as to be positioned on the first substrate, and the ultrashort pulse laser is relatively moved at the same plane position as the first dicing line, thereby forming the second cutting line step B on the first substrate. : concentrating the ultrashort pulse laser light so that the beam waist portion is located on the first substrate, and relatively moving the ultrashort pulse laser light in parallel with a predetermined distance from the second cutting line. A third cutting line is formed on the first substrate. Step C: The second and first -13-200848190 substrates are cut along the first and second cutting lines to divide the structure. Step D: cutting the second cutting line of the first substrate along the third cutting line, and removing the third cutting line. Further, the structural system has a metal thin film on the surface of the second substrate, and the spacer is Forming an electronic component by the space between the first and second substrates and the sealing material, the metal thin film is present on the side and the outside, and the metal thin film is electrically connected to the ruthenium. Because the metal thin film straddles the sealing body, the metal thin film The electronic component is inside the body to be sealed, so that the gold wire is used, and the electronic component is inserted outside the sealing portion. The present invention is a laser processing device, an ultrashort pulse laser generating device; The mirror causes the pulsed laser light generated by the former generating device to be optically lensed at a certain angle so that the manner of deflecting the aforementioned pulsed laser light is synchronized with the rotating mirror and rotated, and the focal point traces the circular trajectory; The condensing lens is along the means for moving forward and the means for mounting the object. Thereby, the cutting line is drawn into the object to be processed, and further along the cutting shape. [Effects of the Invention] Due to the self-bundling action, the optical path of the laser light is formed to form a cavity in a portion longer than the beam waist, and the substrate is formed in the concentrating channel portion, thereby being from the first The space surrounding the sealing material on the first substrate side is electrically connected to the constituent film as the distribution wiring when the electronic component is traversed in the space. The utility model is characterized in that: the ultrashort pulse laser is deflected and rotated; the concentrating path and the optical axis are moved by the rotation to describe the optical axis direction, and can be broken in a circular manner to cut into a circular traveling direction. When the concentrating channel is in the cavity 14-200848190 of the second surface or the cavity near the second surface, the processing distance of the laser light traveling direction is made larger than the normal peeling process. [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 is a view showing an embodiment of a processing method of the present invention. The laser beam (beam) 2 which is an ultrashort pulse wave 15 outputted from the ultrashort pulse wave laser generating device 1 is paralleled by a collimator (not shown), and is incident on the collecting lens 3 or the like. The condensing means is incident from the front surface 45 of the object 4 as the bundled laser beam 5. A laser with an ultrashort pulse is a laser with a pulse width of less than 100 ps. Examples of the object to be processed 4 include a dielectric material such as glass, sapphire or diamond, or a semiconductor material such as tantalum or gallium nitride. Further, the object to be processed 4 is suitably a flat object such as a substrate. Therefore, in the following, the object to be processed 4 is sometimes referred to as a substrate. The laser is selected to be the wavelength that is transparent to the object being processed. Here, transparency is not necessarily limited to the meaning of 100% transmission of light. It also includes situations where a certain amount of laser light can pass through. For example, when the object to be processed is used as the substrate, it is only required to be an infrared region having a wavelength of 1 #m to 2 // m. As an example of the laser medium, in addition to the titanium sapphire crystal (center wavelength: 780 nm), a fiber for adding bait, a fiber for adding a mirror, Nd: YAG crystal, Nd: YV〇4 crystal, Nd: YLF crystal, and the like are also mentioned. Further, in the case where a glass substrate is used as the object to be processed, the laser medium is preferably a crystal of titanium sapphire (center wavelength of 780 nm). Further, the front side is the side on which the laser light is incident, and the opposite is true. The side on the side is called the reverse side. The clustered laser beam 5 forms a beam waist 6 as a condensed spot inside the -15·200848190 of the object 4 to be processed. The bundled laser beam 5 is irradiated onto the object 4 to be processed, and the beam waist 6 is aligned with an appropriate position inside the object to be processed from the front surface 45 to the reverse surface 44 to illuminate the beam. Adjusting the energy, the wavelength, and the pulse width of the concentrated laser beam 5 and the focal length or condensing position of the condensing lens 3, and collecting the ultrashort pulse at a high power density inside the object 4, from The beam waist 6 is self-concentrating according to the Kerr effect in the direction of travel, forming a propagation path 8 of the beam of fine beams having a diameter of the beam waist 6 . In the first drawing, when the irradiation condition is set so that the laser beam waist portion 6 is formed from the reverse surface 44 to the front side in the thickness 7 of the workpiece 4, the incident concentrated laser beam 5 is received. The beam waist 6 is propagated as a divergent beam 10 in a region where the power density is weak and the self-winding action caused by the Kerr effect does not occur, but after the light is concentrated by the beam waist, the Kerr appears. When a very high power density spot is formed at the waist of the beam, the thin-lined channel 8 propagates along the channel 8 formed to cover the distance 13 and the inside of the object, while consuming the laser beam energy. While advancing toward the reverse surface 44, energy capable of maintaining the Kerr effect can be maintained on the reverse surface 44, and a portion of the object to be processed located in the passage 8 is compressed by the shock wave, resulting in a fine void, and the remaining portion will be formed. The ridge is formed on the reverse side 44 when it is not discharged from the reverse side, or the elongated cavity is formed along the passage 8 to cover the distance 14 from the beam waist 6 to the reverse side 44. The beam that has reached the opposite side 44 and has not been absorbed by the object to be processed will be released as a divergent beam 1 1 because it is no longer closed by self-concentration. -16- 200848190 As a condition for making the concentrating effect of the beam caused by self-assembly in the object to be processed, there will be a condition according to the literature. H. Marburger, Prog. Quantum Electron., Vol.4 , ρ.35 (1975), an index expressed by Equation 1 which is called the critical enthalpy power P〃 of the self-assembly. [Expression 1]
Per = 3.77 乂2 %7m0n2 <BR> 在數式1中，2爲雷射波長，心爲物體的折射率，化 爲物體之非線形折射率。 根據數式1，例如石英玻璃之自集束的臨界閾値功率 是2.3MW，入射於被加工物體的雷射脈波之峰値輸出（以雷 射脈波寬度所除算雷射脈波能量而得的値）變得比此値更 大時，會明顯地引起自集束作用。 藉由謀求超短脈波雷射的能量、波長、脈波寬度、以 及聚光透鏡的焦點距離、聚光位置的調整，能改變自集束 作用的產生狀況。藉此，會形成到達反面的空洞、或到達 反面附近的空洞。在此，面附近就是包含從此面朝向內部 方向直至作爲基板等之被加工對象的物體之厚度的1/10左 右的距離者。可如同以下來設定空洞形成狀態。 (1) 因爲空洞未到達反面，所以會形成反面隆起比周 邊表面還要高且機械強度弱的隆起構造。 (2) 形成前述聚光通道直至反面’藉以形成空洞直至 反面。 -17- 200848190 (3) 從正面形成前述聚光通道直至反面，藉以從正面 形成空洞直至反面。 (4) 聚光通道從正面形成僅至加工物體內部，藉以從 正面形成空洞僅至加工物體內部。 藉由本發明，利用聚光光學系統，將具有對被加工物 體而言爲透明之波長的超短脈波雷射光，在基板內聚光成 非常小之雷射光截面積，藉以在聚光點實現高功率密度的 聚光點，藉此，當在基板內傳播之雷射光一旦被聚光時， 會產生由克爾效應引起之自集束作用，另一方面在聚光點 發生由電漿引起的散焦作用，藉由這2種作用的平衡，雷 射脈波光的傳播會形成自集束作用之被自困陷 (self-trapped)的細線。此困陷的範圍，能夠以比在通常的 功率等級之未出現自集束作用的條件下的焦點附近形成之 射束腰部的焦點深度還要大上數倍之距離的値，來形成自 集束作用的雷射光傳播通道。通道的長度會由於材料特 性、雷射射束的功率密度、能量等的參數而變化。因爲通 道的雷射光傳播方向之端部到達反面，爾後由於蓄積在通 道內部的能量而造成局部的高溫、高壓力狀態且從內部朝 向外部的力量會發揮作用，所以上述自集束作用的聚光通 道之通過軌跡中會形成並殘留空洞。 如第2圖所示，沿著掃描線4 8形成由自集束作用造成 之長圓筒型通道的空洞，該自集束作用係從被加工物體4 內之雷射光的聚光點，將超短脈波雷射光2在行進方向1 6 上形成爲長型。此外，在形成以後，於掃描線4 8以直角方 • 18 - 200848190 向施加彎曲應力49來進行切斷的情況下，因爲相較於穴 徑，形成了非常深的孔穴，所以沿著此溝的線（切割線）之 作用是切斷的起點，沿著切割線，即使是較弱的應力也能 進行切斷。因爲在基板的反面上形成連續之淺溝槽或構造 上較弱的隆起構造，所以切斷方向僅沿著掃描線4 8，亦即 切割線便能確實地產生。會有在反面附近於表面空出孔穴 的情況、或通道出口部之隆起比周圍表面還要高且機械強 度弱之構造的情況，但不管是在任一種情況下，使雷射光 在基板之欲切斷的方向上掃描，藉以沿著掃描線4 8，亦即 切割線來形成從基板內部深處到達反面的加工形狀。因爲 能充分獲得加工溝槽的深度，所以往後能以少量的彎曲應 力49沿著掃描線4 8來切斷基板。切割線的形成方面，亦 可不藉由雷射光的移動，而是由被加工物體4的移動來完 成。任一種移動都稱爲相對的掃描。另外，在欲破斷的方 向上掃描雷射光的情況下，藉由調整掃描速度，可在破斷 面上連續地設置切割線，也可空出間隔而離散地設置切割 線’在任一個情況下，可藉由少量的彎曲應力而沿著切割 線來切斷基板。 第3圖係表示將雷射光聚光於被加工物體的某個高度 並且掃描被加工物體一次而加工以後，變更雷射光聚光點 的聚光位置，再一次進行加工的方法。首先，如第3 (a)圖 所不，將雷射光的射束腰部對焦於從被加工物體4的反面 44朝向內部而隔開空洞形成距離57(135// m左右）左右處， 形成由自集束作用造成的通道8，沿著掃描方向47而直線 -19- 200848190 地掃描一次。藉此，直線地形成空洞列。接著，如第3 (b) 圖所示，沿著光軸方向使聚光透鏡3移動，僅以空洞形成 距離5 8左右使形成射束腰部之高度朝向正面側挪移，而形 成通道8並再次掃描。此時，因爲在由初次掃描所造成之 加工線3 5上進行掃描，所以空洞列會形成爲與初次掃描所 形成之空洞列大致連續地接續。此外，若有需要，如第3(c) 圖所示，進行射束腰部的高度移動和用於形成空洞列的掃 描。高度移動和掃描係僅重複必要的次數。藉由此操作之 重複，而形成合體於被加工物體4之內部的直線狀之空洞 壁面。最後，對被加工物體4賦予彎曲應力而沿著空洞壁 來切斷。初次的掃描中，空洞不一定必須到達反面。另外， 可重複高度移動以及掃描一直到射束腰部到達正面爲止。 藉由這種方法，因爲在被加工物體上重複空洞形成於深 部，所以能施行從部分切斷至完全切斷的加工。 作爲加工對象物體的基板不限於1片。即使是相同種 類或者相異種類材料之重疊2片以上的基板的多層構造， 也能對所有的基板進行加工。多層構造的情況下，使基板 貼緊也可、或分開亦可，在分開的情況下，空隙除了是空 氣以外’還可以是有機材料或透明電極層。在作爲基板2 片的情況下，如第4圖所示，也會有由置於雷射入射光側 之上部基板8 1與置於相反側之下部基板82所構成，而含 有空隙8 3的情形。若以此方法，即使是由複數層所組成的 玻璃也能應用本發明的方法。 如第4圖所示，基板2片的情況下，下部基板8 2會進 «20- 200848190 行比雷射傳送方向更長的加工。這是因爲自 隨著被加工物體中的傳送距離而增加。另外 自集束作用的聚光通道時，必須10至200 // 的雷射在被加工物體內傳播。此距離越長， 量也會形成長的空洞。若利用此特點，於基 置由與其同種或對雷射光而言爲透明之異種 其他基板，藉以實效地增強自集束作用，能 成距離，進行更深的加工。特別是，在被加 面到反面形成聚光通道，也能將空洞形成爲 反面。在非被加工物體的其他基板中，有時 洞，而有時候會形成空洞。 此方法能適用於切斷液晶顯示面板的玻 顯示面板的玻璃基板之構造係由夾著空隙而 光側的上部基板和置於相反側的下部基板所 於上部玻璃基板，從上面側照射超短脈 雷射射束腰部來到該基板的表面或者內部之 於上部玻璃基板形成空洞。藉由使雷射光相 在上部玻璃基板形成切斷面（切割線）。 從下部玻璃基板也一樣地從上部玻璃基 射超短脈波雷射，藉以形成切斷面。以雷射 該基板的表面或者內部之適當位置的方式進 脈波雷射能不對上部玻璃基板造成損傷而透 玻璃基板形成空洞。藉由掃描超短脈波雷射 基板形成切斷面（切割線）。 集束作用會依 ，在形成由於 m左右之距離 即使是相同能 板之正面側載 材料所組成的 夠增長空洞形 工物體上從正 涵蓋從正面到 候不會形成空 璃基板。液晶 置於雷射入射 構成。 波雷射，使得 適當位置時， 對地移動，而 板之上面側照 射束腰部來到 行照射。超短 過，能在下部 ，於下部玻璃 -21 - 200848190 第5 (a)圖係表示液晶顯示面板截面圖。液晶顯示 9 0係由玻璃基板2片組成之積層構造所構成。在上部 基板9 1之內側表面上形成透明電極、彩色濾波片、薄 晶體等的零件95，在下部玻璃基板92的內側表面則形 極等的零件96。另外，在2片的玻璃基板之間塡充液晶 液晶係被封入於氣密封止材料94中。切斷步驟中，有 沿著相同的切斷線來切斷上部玻璃基板和第2玻璃基 或者有時是以稍微偏離的其他切斷線來進行切斷步驟 沿著相同的切斷線來切斷的情況下，可採用前述之第 所示之使2片以上的基板重疊並對所有基板進行加工 況即可。 第5 (a)圖係進一步表示以偏離之其他切斷線來進 斷步驟。在此步驟中，進行上部玻璃基板的切斷97及 玻璃基板的切斷98。從上部玻璃基板9 1的正面照射集 射射束5 ’使得雷射射束腰部來到該基板內部之適當 時’在上部玻璃基板9丨的反面附近形成空洞6丨。藉由 集束雷射射束5，於上部玻璃基板9 1形成切斷面。此 因爲在上部玻璃基扳9 1的加工中未消耗的雷射射束 過上部玻璃基板9丨，並照射於在下部玻璃基板92上形 電極等之零件96，所以對電極等的零件96造成損害， 會對作爲液晶顯示裝置之動作造成不良影響。爲了防 種不良影響’如第5(b)圖所示，事前在電極等之零件 被雷射射束照射的位置上塗佈、黏著或者貼緊而預先 保護用塗佈層99。保護用塗佈層99係對於集束雷射射 面板 玻璃 膜電 成電 93 ° 時會 板， 。在 4圖 的情 行切 下部 束雷 位置 掃描 時， 會透 成的 最後 止這 96的 形成 束的 -22- 200848190 波長而言爲不透明者。在此，所謂的不透明，不僅是完全 不透過雷射光的情況，也包含能達成不會對保護用塗佈層 99下之電極等的零件96造成損害之目的而透過微量的光 者。 與對上部玻璃基板9 1的加工分開，另外進行對下部玻 璃基板92的加工。這同樣地，以從上部玻璃基板9 1的正 面照射集束雷射射束5，但雷射射束腰部來到下部玻璃基 板92內部之適當位置的方式來進行照射。集束雷射射束5 通過上部玻璃基板9 1，在下部玻璃基板92的反面附近形成 空洞9 1。掃描集束雷射射束5，藉以在下部玻璃基板92形 成切斷面。對玻璃基板施加應力而切開玻璃基板以後，經 過將液晶顯示面板組裝於其他零件的步驟，以製造液晶顯 示裝置。因此，本方法可用於製造液晶顯示面板以及液晶 顯示裝置。 表示成爲複數基板時之其他的實施形態。本實施形態 中係表示由2片基板組成之構造體的分割方法。第6圖係 用於說明此實施形態的模式截面圖。 構造體70係具有上部玻璃基板9 1與下部玻璃基板92 所平行配置而構成的構造。在作爲液晶顯示面板而使用的 情況下’構造體7 0係在2片的玻璃基板之間部分地插入間 隔物。爲了在2片玻璃基板之間設置空隙而需要間隔物。 例如在液晶顯示面板中，配置多數個球狀的砂石或者聚苯 乙烯和圓柱狀的光阻材料等之物體。在本實施形態例中， 在2片的玻璃基板之間插入氣密封止材料9 4，原來的目的 >23- 200848190 是在該玻璃基板和此氣密封止材料9 4中構成封閉空間，但 在未另外插入物體的情況下，也擔任間隔物的角色。在不 插入氣密封止材料9 4的情況下，則另外插入間隔物。在下 部玻璃基板9 2的上面，以某個範圍來設置金屬薄膜配線 89。在具有前述氣密封止材料的情況下，前述封閉空間之 下部玻璃基板9 2上配置有電子零件（未圖示），另外，金屬 薄膜配線8 9係較佳爲電氣連接於該電子零件，並配置成跨 過氣密封止材料94。若構造體是液晶顯示面板時，則在該 封閉空間中形成顯示裝置要件。 在此’爲了能從外部接近下部玻璃基板9 2上的金屬薄 膜配線8 9 ’而將構造體7 0分離。首先，藉由聚光透鏡3 從上部玻璃基板9 1之上面側將超短脈波雷射射束2聚光， 以雷射射束腰部來到下部玻璃板9 2的上面（雷射光入射側 的面）或者內部之適當位置（在圖中，雷射射束腰部位於上 面上，但並非侷限於此，以下亦然）的方式來進行照射。但 是’在下部玻璃板當中則是無金屬薄膜配線8 9的位置。雷 射射束2通過上部玻璃基板9 1，在下部玻璃基板92內形成 由自集束作用造成的空洞64。藉由使雷射射束2相對地移 動，以連續或者離散地形成空洞，在下部玻璃基板9 2形成 第1切割線8 8。 接著，將聚光透鏡3移向上方，以雷射射束腰部來到 上部玻璃板91上面（雷射光入射側的面）上或者內部之適當 位置的方式來進行照射。在上部玻璃板9 1內形成由自集束 作用造成的空洞6 3。藉由使雷射射束2相對地移動，以連 -24- 200848190 續或者離散地形成空涧，在上部玻璃基板9 1形成第2切割 線87。第2切割線87係形成在第丨切割線88的正上方。 接著，在形成第1和第2切割線88以及87以前，以與第2 切割線87相同的方法，於上部玻璃板9 1上製作第3切割 線86。在此過程中形成空洞62。第3切割線86係較佳爲 設置在接近上部以及下部的玻璃基板9 1及9 2間之氣密封 止材料或者間隔物94的位置，通常形成爲跨過下部玻璃基· 板92上面的金屬薄膜配線89。另外，第3的切割線86係 形成爲與第2切割線8 7分開距離7 7 (△ Y)而平行。 當具有氣密封止材料，在氣密封止材料和2片基板所 構成之封閉空間內部配置電子零件的情況下，第3切割線 較佳爲設置在該封閉空間外部於接近該氣密封止材料94 的位置。 此時，在製作上部玻璃基板91之第3切割線8 6時未 消耗的雷射射束2會通過上部玻璃基板9 1，並照射於金屬 薄膜配線8 9，所以可能會對這些帶來損害。不過，透過上 部玻璃基板9 1的雷射射束2之強度係通常並非強到足以對 該等造成損害。另外，爲了防止損傷，亦可事前在金屬薄 膜配線89之被雷射射束照射的位置上塗佈、黏著或者貼緊 而形成保護用塗佈層。保護用塗佈層係如同後述，在沿著 第3切割線而被切斷且可從外部接近以後則移除。此外， 保護用塗佈層係對於雷射射束之波長而言爲不透明者，所 謂的不透明，不僅是完全不透過雷射光的情況，也包含能 達成不會對該零件造成損害之目的而透過微量的光者。 -25- 200848190 如同這般，形成從第1到第3的切割線以後，沿著第 1切割線8 8及其正上方之第2切割線8 7來對構造體7 〇施 加折彎應力時，下部以及上部玻璃基板皆分別設有第1和 第2切割線的部分會破斷，藉以沿著第1以及第2切割線 來分割構造體70。接著，沿著第3切割線對上部坡璃基板 9 1施加折彎應力時，上部玻璃基板9 1當中的第2和第3 切割線之距離△ Y部分會被分離。由以上的順序來切斷構 造體70。 在第7圖中表示以此方式而切斷的2層構造體。下部 玻璃基板92僅擴大相當於第2以及第3切割線間隔1 1的 △ Y，且在上部具有無上部玻璃基板9 1的段差構造。變得 能從外部接近下部玻璃基板92擴大的部分。因此，可重新 形成控制電路等之電子零件及金屬薄膜配線。另外，在下 部玻璃基板上具有從氣密封止部內部導出至外側之金屬薄 膜配線的情況下，能連接導出至外部之部分的配線。 在第7圖中，下部玻璃基板9 2以及上部玻璃基板9 1 之各個截面66以及65係分別將第1切割線8 8和第3切割 線8 6作爲起點而分割的截面。與第1和第2切割線8 8以 及87形成方法相同，從上部將超短雷射脈波聚光而分別在 下部以及上部之玻璃基板上分別形成切割線以後，分割並 形成玻璃板的側面68、67。 藉由本實施形態，因爲僅從玻璃構造體之單面側照射 雷射射束而進行加工，所以能謀求設備的簡化。另外’因 爲能形成在上部不具有上部基板的下部基板部分’所以能 -26- 200848190 由外部接近，能從下部基板上面或者在此基板上設置控制 電路等之電子零件或者金屬薄膜配線。因此，能謀求顯示 面板的薄型化。另外，可連接於從氣密封止部內部導出至 外側的其他金屬薄膜配線部分。 第8圖係表示將本實施形態應用於製造液晶面板時之 範例的圖。在從形成有多數個液晶板之具有上下2片大型 玻璃基板9 1以及92的大型構造體70來製造液晶面板以後 而分割成個別面板80的步驟中，實施本實施形態。該玻璃 基板91及92以及插入於其間的氣密封止材料94所包圍之 空間中則內建液晶顯示面板所必需之彩色濾波片、液晶 93、驅動電晶體、配線、間隔物等（液晶以外則未圖示）。（a) 是上視圖以及截面圖，（b)是放大沿著Y方向切斷的截面 圖。Z方向爲垂直於紙面的方向。 如同以下來形成沿著X方向的切割線7 4 -1〜7 4 - m。對 下部玻璃基板92形成第1切割線88係在其上面，於下部 玻璃板中無金屬薄膜配線8 9的部分進行。另外，在上部玻 璃基板91中，於第1切割線8 8上形成第2切割線8 7。另 外’於上部玻璃基板，較佳爲將第3切割線設置在接近氣 密封止材料94的位置。第3切割線86係與第2切割線87 分開距離77 (△ Y)而平行。第3切割線86係通常形成爲跨 過金屬薄膜配線89。 沿著Y方向的切割線73-1〜73-η係僅以面板寬度76 之間隔而逐一設置1條切割線即可。能與形成前述第1和 第2切割線之方法相同地進行設置。 •27- 200848190 因爲形成切割線以後，能沿著在其上部和下部之玻璃 基板而形成的切割線而分割，以此方式在X、γ方向上分 割’所以能從大型2層構造體70製造多數片液晶顯示面板 80。在此情況下，特別是在液晶顯示面板80之至少丨個側 面上，在下部玻璃基板92之上，從氣密封止材料94內部 朝向外部被拉出金屬薄膜配線89，能輕易地從外部接近， 所以能實現可電氣連接的各種構造。 本實施形態之處理多數片之從大型2層構造體個別分 割成複數個顯示面板的情況下，因爲能僅從單一側照射雷 射射束而對2片玻璃基板加工並設置切割線，所以不需要 大型玻璃之反轉搬運手段。此外，不會因雷射射束而對從 顯示面板之內部構造至外部的電氣配線等之金屬膜等造成 損害，能在一方的基板上從外部輕易地接近，且以△ Y的 寬度在上下的2片玻璃板上形成段差構造。在靠近下部玻 璃基板之表面的切割線且面對上部玻璃板之表面上設置的 金屬薄膜或電子零件方面，上部玻璃基板之端作爲第2和 第3切割線間的部分而被除去，所以變得容易從外部接 近。另外，在下部玻璃基板上跨越封止部而從顯示面板內 部導出之金屬薄膜配線係可行的。因此’變得能從封止部 外部進行配線。 本方法不僅是液晶顯示面板，也能適用於切斷電獎顯 示面板等之其他平板顯示面板。另外’本方法能用於這些 平板顯示面板的製程。 構成構造體的基板雖爲玻璃，但作爲發明對象的材料 -28- 200848190 並非侷限於此。另外，基板雖爲2層，但很顯然也能適用 於具有3層以上之基板的情況。 第9圖係表示斜角（傾斜面）加工方法的實施形態。使 用旋轉鏡5 1，使來自超短脈波雷射產生裝置1之超短脈波 雷射射束2繞著旋轉軸5 5而以一定角度0偏向並且旋轉 52。旋轉的雷射射束53以及54之光路徑與光軸一致並且 使用與旋轉鏡5 1 —起旋轉的聚光透鏡3，聚光透鏡3之焦 點會描繪圓軌跡。在台座等的加工物體搭載手段（未圖示） 預先配置基板狀的被加工物體4。預先使該圓軌跡和加工 物體搭載手段之搭載面成爲平行等，藉以將基板狀的被加 工物體4配置成相對於其正面的法線平行於旋轉軸5 5時， 能夠在被加工物體4上對雷射光照射位置進行旋轉掃描， 並進行圓形軌跡的照射。在此情況下，在被加工物體4上 從旋轉軸5 5傾斜角度0而進行傾斜加工。首先，將射束腰 部對焦於從被加工物體4的反面5 6朝向內部而隔開空洞形 成距離57(135#m左右）左右處，並以圓形進行掃描，藉以 在從法線偏移角度0的方向上以圓狀形成細線上的空洞 列。此外’使聚光透鏡3沿著光軸方向而在旋轉鏡5 1之方 向上移動，藉以依序移動空洞形成距離5 8、5 9左右，每次 移動時都形成空洞列並重複掃描，形成從被加工物體4之 正面至反面的圓形之空洞壁面。爾後，藉由彎曲而分離， 周圍被進行傾斜面之加工，切出成圓形。以此方式，本發 明係不僅是在被加工物體的表面附近，亦可達到內部而重 複空洞之形成，可施行從部分切斷到完全切斷的加工。 -29- 200848190 在以上的雷射加工中，脈波能量較佳爲1 mJ以下，進 一步較佳爲1 0 //；[以下。在1 0 //：[以下的情況下，能獲得 俐落且平滑的切斷面，很少發生裂紋且破壞強度高。當^ 紋等存在時，玻璃等被加工物體之強度變弱，所以會有不 佳的狀況。在脈波能量大的情況下，欲對正面附近進行加 工時，由於脈波尖端部在正面附近造成的自由電子電;^， 脈波中心部至後端部會被反射或散亂、吸收，所以有日寺候 很難在玻璃內部形成空洞。在脈波能量小的情況下，因爲 在正面附近發生的自由電子電漿之密度變低，變得不會大 幅阻礙傳送脈波，所以在玻璃內部能輕易地形成空洞通道。 另外，超短脈波的雷射就是脈波寬度l〇〇ps以內的雷 射，另外，較佳爲脈波寬度爲5 00fs至10ps，進一步，在 2ps左右的情況下爲最佳。這是因爲連續地形成破斷面以 後，割斷玻璃基板時所必需的應力降低，割斷面的品質良 好。 另外，以玻璃基板作爲被加工物體的情況下，較佳爲 脈波寬度1 50飛秒、輸出能量1 # J以上。 如同以上所示，本發明係提供一種新的加工方法，能 使用超短脈波之聚光射束的焦點深度小之射束腰部，採用 形成於被加工物體內部形成的自集束作用’而使用加工之 實質焦點深度的增大。此方法未見於以往的加工方法，是 藉由雷射射束和加工物的相互作用而初次實現的精密加工 方法。 [實施例1] -30- 200848190 雷射媒體是鈦藍寶石結晶（中心波長78〇nm)，脈波寬度 1 5 0飛秒、輸出能量1 μ ；[以上。另外，加工對象是屬於玻 璃基板的Corning Eagle 2000，厚度700// m。在各貫施例中 無與此相異之記載的情況下，這些在所有的實施例中爲共 通。 本實施例係以第1圖所示之構成，將以雷射照射被加 工物體時的聚光位置從正面移向內部時，觀察於被加工物 體產生的變化，並證實本加工方法之原理的實驗例。 第10圖以及第11圖係表示觀察在被加工物體內產生 之變化的截面圖之顯微鏡照片。第1 0圖係表示作爲被加工 物體的基板之正面45，第1 1圖係表示反面44附近。對於 第1圖的構成，使用透鏡之入射射束直徑爲6mm，聚光透 鏡3的焦點距離f爲約3.1 mm之已像差補正的非球面透 鏡。在將雷射射束之橫向模式作爲高斯分佈的射束時，則 算出聚光點之射束直徑爲大約1 μ m，包含射束腰部之能量 的9 0 %之範圍的焦點深度爲1 // m以下。如同這般，將具有 小焦點深度値的超短脈波雷射射束照射於被加工物體4的 情況下，以在正面45置有射束腰部之位置的方式而集束且 照射射束的情況下，將第1 0圖中從正面4 5於內部以深度 2 3所示之淺部分2 1進行除去加工，此外，於內部移動射束 腰部時，表面除去量會減少，此外，於內部移動射束腰部 的位置時，在被加工物體4的內部發生光學扭曲的範圍 24、25等會根據置有射束腰部之深度方向的位置，而發生 在其周邊部分。將射束腰部置於內部，減少表面的除去加 -31- 200848190 工，取而代之的是發生內部光學的扭曲，出現範圍24、 第1 1圖係進一步在基板內部使射束腰部移動時 面觀察照片。在正面4 5上無變化之條件下觀察到在射 部部分產生光學變化的部位3 1、3 2。此外，觀察隨著 被加工物體之反面44，從內部至反面在數1〇〇 a m的 中引起光學變化的部位33。此外，射束腰部從反面44 大約1 3 5 // m時，就以細線狀而從內部涵蓋至反面而直 形成空洞3 4。此外，使雷射射束腰部對焦於反面44時 對反面附近進行除去加工。從這種加工結果中，即使 射束之焦點深度3 7如同前述爲1 # m左右，但朝著射 行進方向而以空洞形成距離（135 // m左右）而形成作爲 腰部之直徑的細線狀空洞34，未發現自集束作用的 下，相較於僅在射束的焦點深度（1 // m左右）之範圍中 加工，本方法能涵蓋2位數左右長的範圍而進行細線 空洞加工。 [實施例2] 本實施例係在反面附近形成空洞通道並掃描雷射 以形成空洞通道的切斷面的情形。 在形成由自集束作用所造成之細線狀空洞的情況 如第1 2圖內的圖所示，有時會在反面聚集形成漏斗形 分4 3。使該漏斗形的部分4 3互相具有鄰接部的重疊， 狀空洞係個別形成於與通道8相同之處，沿著被加工 的反面44，相對地以超短雷射脈波進行掃描，沿著掃 向來形成既定加工深度之並列於包絡線46的多數個 25 ° 的截 束腰 接近 範圍 接近 線地 ，僅 雷射 束的 射束 情況 進行 狀的 光， 下， 的部 細線 物體 描方 細線 -32- 200848190 狀空洞。第1 2圖係配合以此方式形成之細線狀空洞的切斷 面之顯微鏡照片而進行表示。在此例中，以3mm/s的掃描 速度來進行雷射脈波的掃描以後，沿著掃描線折彎並分 割，藉以觀察截面。在此圖中係表示，在被加工物體之厚 度4 1的加工中，涵蓋從反面44達深度4 2之範圍的包絡線 46，而形成多數個細線狀的空洞通道，以其爲起點而分割 之被加工物體的加工截面。第1 3圖係拍攝空洞6 1之截面 而得的掃描型顯微鏡照片，另外，第1 4圖係特別擴大反面 附近之掃描型顯微鏡照片。表示形成有空洞6 1處的表面之 隆起比周圍還要高且機械強度弱之隆起構造7 1。 [實施例3] 在如第3圖所示之構成中，改變射束腰部的高度，進 行複數次的掃描，在反面附近進行加工。第1 5圖表示掃描 次數4次、脈波能量1 0 μ ；!、脈波寬度2ps時的截面。縮小 脈波能量，使脈波寬度最佳化，藉以在反面附近形成高品 質的加工區域3 6。 [實施例4] 在此實施例中，亦於如第3圖所示之構成，改變射束 腰部的高度，進行複數次的掃描而進行加工。在此實施例 中，以在玻璃基板之正面附近設定加工區域的方式來形成 射束腰部。第1 6圖係表示掃描次數1 0次脈波能量1 // J、 脈波寬度2ps之情況下的截面。藉由使脈波能量以及脈波 寬度最佳化，能獲得涵蓋正面的良好加工區域3 6。 [實施例5] -33- 200848190 本實施例係將被加工物體做成玻璃基板2片之積層構 成的情況。作爲第4圖所示的構成，使雷射的聚光位置從 玻璃製之上部基板8 1的正面變化至涵蓋反面而進行加 工。於第1 7圖表示2片玻璃基板之加工後的顯微鏡照片。 不僅是上部玻璃8 1，還有置於其背面側的下部玻璃82也被 加工。上部玻璃8 1涉及最大1 50 // m，下部玻璃82涉及最 大25 0 // m而進行加工。如同前述，置於下部的基板會根據 雷射傳搬方向而進行長時間的加工。 以上，已說明本發明的實施例。很顯然只要不脫離申 請專利範圍所記載之發明技術思想，就能對這些施行變更。 [產業上的利用性] 作爲本發明的活用例，在用於半導體裝置、液晶等之 顯示裝置的被加工物體之加工中，對於從表面進行矽晶 圓、薄膜電晶體和顯示裝置的基板分割、高耐壓功率半導 體基板加工，此外，多層構造電子元件之層內部的除去加 工之微細、且熱影響少的加工而言爲有效。在高積體電路 製造中，由於加工寬度的微小化、加工除去物的減少等， 製品良率提升，因而能減低電子零件的製造成本。此外， 在石英、藍寶石等之半導體裝置的基板之孔穴加工等也能 獲得有效性。在設有多數個微細孔穴之過濾部的加工方面 也有效。此外，本發明係可利用於製造使用液晶顯示面板、 電漿顯示面板等之多層玻璃構造的電子裝置。 【圖式簡單說明】 第1圖係說明採用與本發明相關之克爾效應所引起的 -34 - 200848190 自集束作用的被加工物體之加工方法的構成圖。 第2(a)、（b)圖係使雷射掃描，並進行基板加工的構成圖。 第3(a)〜（c)圖係掃描被加工物體而加工以後，變更雷射 光聚光點之聚光位置，再次進行加工的方法之表示圖。 第4圖係於由2片基板組成之多層構造進行加工的構 成圖。 第5(a)、（b)圖係在其他位置切斷液晶面板構造以及2 片玻璃基板時的說明圖。 第6圖係用於說明由2片基板組成之構造體的分割方 法之模式截面圖。 第7圖係表示由2片基板組成之玻璃構造體的槪觀形 狀之1例。 第8(a)、（b)圖係由大型玻璃構造體分割成個別的液晶 顯示面板時的說明圖。 第9圖係表示將本發明之加工方法應用於傾斜面加工 之實施形態的圖。 第1 0圖係表不第1實施例之結果的圖，是被加工物體 正面附近的顯微鏡照片。 第1 1圖係表示第1實施例之結果的圖，是被加工物體 反面附近的顯微鏡照片。 第1 2圖係表示第2實施例之結果的圖，是空洞通道之 切斷面的說明圖及其顯微鏡照片。 第1 3圖係表Tpc第2實施例之結果的圖’是拍攝空洞 6 1之截面的掃描型顯微鏡照片。 -35- 200848190 第1 4圖係特別放大在第1 3圖中，基板反面附近之掃 描型顯微鏡照片。 第1 5圖係表示第3實施例之結果的圖，係切斷面的顯 微鏡照片。 第1 6圖係表示第4實施例之結果的圖，係切斷面的顯 微鏡照片。 第1 7圖係表示第5實施例之結果的圖，表示2片基板 加工以後的顯微鏡照片。 【主要元件符號說明】 1 超短脈波雷射產生裝置 2 雷射射束 3 聚光透鏡 4 被加工物體 5 集束雷射射束 6 射束腰部 7 厚度 8 通道 10 射束 11 發散性射束 13、14 S巨離 15 超短脈波 16 行進方向 21 淺部分 23 深度 -36- 200848190 24、 25 範圍 3 1〜 33 引發光學變化的部位 34 細線狀空洞 35 力口工線 36 加工區域 37 焦點深度 41 厚度 42 深度 43 漏斗形的部分 44 反面 45 正面 46 包絡線 47 掃描方向 48 掃描線 49 彎曲應力 50 雷射射束 51 旋轉鏡 52 旋轉 53、 54 雷射射束 55 旋轉軸 56 反面 57〜 59 距離 6 1〜 64 空洞 65、 66 截面 -37- 200848190 67、 68 側 面 70 構 造 體 7 1 隆 起 構 造 77 距 離 8 1 上 部 基 板 82 下 部 基 板 83 空 隙 86 第 3 切 割 線 87 第 2 切 割 線 88 第 1 切 割 線 89 金 屬 薄 膜 配 線 90 液 晶 顯 示 面 板 91 上 部 玻 璃 基 板 92 下 部 玻 璃 基 板 93 液 晶 94 氣 密 封 止 材 料 95、 96 零 件 97、 98 切 斷 99 保 護 用 塗 佈 層 -38Per = 3.77 乂2 %7m0n2 <BR> In Equation 1, 2 is the laser wavelength, and the center is the refractive index of the object, which is the nonlinear refractive index of the object. According to Equation 1, for example, the critical threshold power of the self-assembly of quartz glass is 2. 3MW, the peak output of the laser pulse incident on the object to be processed (the 値 obtained by dividing the laser pulse wave energy by the laser pulse width) becomes larger than this, and the self-bundling is apparently caused. effect. The generation of the self-concentration action can be changed by adjusting the energy, the wavelength, the pulse width of the ultrashort pulse laser, and the adjustment of the focal length of the condensing lens and the condensing position. Thereby, a cavity that reaches the opposite side or a hole that reaches the vicinity of the opposite side is formed. Here, the vicinity of the surface is a distance of about 1/10 of the thickness of the object to be processed from the surface toward the inside to the substrate. The void formation state can be set as follows. (1) Since the cavity does not reach the reverse side, a ridge structure in which the reverse ridge is higher than the peripheral surface and the mechanical strength is weak is formed. (2) Forming the aforementioned concentrating channel until the reverse side' is formed to form a cavity up to the reverse side. -17- 200848190 (3) Forming the aforementioned concentrating channel from the front side to the opposite side, thereby forming a cavity from the front side to the back side. (4) The concentrating channel is formed from the front side only to the inside of the processed object, thereby forming a cavity from the front side only to the inside of the processed object. According to the present invention, the ultra-short pulse laser light having a wavelength transparent to the object to be processed is condensed into a very small laser light cross-sectional area in the substrate by the concentrating optical system, thereby realizing at the condensing point. a high-power-density condensing point, whereby when the laser light propagating in the substrate is condensed, self-concentration caused by the Kerr effect occurs, and on the other hand, the scattering caused by the plasma occurs at the condensing point. The focal action, by the balance of these two effects, the propagation of the laser pulse wave will form a self-trapped thin line from the self-collecting action. The range of the trap can be formed by self-bundling at a distance that is several times larger than the depth of focus of the beam waist formed near the focus under the condition of the normal power level without self-bundling. The action of the laser light propagation channel. The length of the channel will vary due to material characteristics, power density of the laser beam, energy, and the like. Since the end of the laser light propagation direction of the channel reaches the reverse side, and then the local high temperature and high pressure state is caused by the energy accumulated in the channel, and the force from the inside to the outside acts, the above-mentioned self-concentrating concentrating channel A void is formed and remains in the trajectory. As shown in Fig. 2, a cavity of a long cylindrical passage caused by self-assembly is formed along the scanning line 48, and the self-bundling is from the condensed point of the laser light in the object 4 to be ultrashort pulse. The wave light 2 is formed into a long shape in the traveling direction 16 . Further, after the formation, when the scanning line 48 is cut at a right angle angle of 18 - 200848190 to the bending stress 49, since a very deep hole is formed as compared with the hole diameter, the groove is formed along the groove. The line (cut line) acts as the starting point for cutting, and along the cutting line, even the weaker stress can be cut. Since a continuous shallow groove or a structurally weak ridge structure is formed on the reverse side of the substrate, the cutting direction can be surely produced only along the scanning line 4, i.e., the cutting line. There may be a case where a hole is vacated on the surface near the reverse side, or a structure in which the ridge of the exit portion of the passage is higher than the surrounding surface and the mechanical strength is weak, but in either case, the laser light is cut on the substrate. Scanning in the direction of the break, thereby forming a processed shape from the deep inside of the substrate to the reverse side along the scanning line 4, that is, the cutting line. Since the depth of the processing groove can be sufficiently obtained, the substrate can be cut along the scanning line 48 with a small amount of bending stress 49 in the past. The formation of the cutting line can also be accomplished by the movement of the object 4 without the movement of the laser light. Any kind of movement is called a relative scan. In addition, in the case of scanning the laser light in the direction to be broken, by adjusting the scanning speed, the cutting line can be continuously provided on the broken section, or the cutting line can be discretely disposed with the interval vacated. The substrate can be cut along the cutting line by a small amount of bending stress. Fig. 3 is a view showing a method of concentrating laser light at a certain height of a workpiece and scanning the object to be processed once, and then changing the condensing position of the laser condensing point and performing processing again. First, as shown in Fig. 3(a), the beam waist of the laser beam is focused on the space from the opposite surface 44 of the workpiece 4 toward the inside, and is formed at a distance of 57 (about 135//m). The channel 8 caused by the self-bundling is scanned once along the scanning direction 47 and the line -19-200848190. Thereby, a hole column is formed linearly. Next, as shown in the third (b), the condensing lens 3 is moved in the optical axis direction, and the height of the beam waist is shifted toward the front side only by the cavity forming distance of about 5 8 to form the channel 8 and Scan again. At this time, since the scanning is performed on the processing line 35 caused by the initial scanning, the void column is formed to be substantially continuous with the hollow column formed by the initial scanning. Further, if necessary, as shown in Fig. 3(c), the height movement of the beam waist and the scanning for forming the hole column are performed. The height movement and scanning system is only repeated as many times as necessary. By repeating this operation, a linear hollow wall surface which fits inside the workpiece 4 is formed. Finally, the workpiece 4 is subjected to bending stress and cut along the cavity wall. In the initial scan, the hole does not have to reach the opposite side. In addition, the height movement and scanning can be repeated until the beam waist reaches the front. According to this method, since the cavity is formed in the deep portion in the object to be processed, the machining from the partial cutting to the complete cutting can be performed. The substrate as the object to be processed is not limited to one sheet. Even in a multilayer structure in which two or more substrates of the same type or different types of materials are stacked, all the substrates can be processed. In the case of a multilayer structure, the substrates may be attached to each other or may be separated. In the case of separation, the voids may be organic materials or transparent electrode layers in addition to air. In the case of the substrate 2, as shown in Fig. 4, there is also a substrate 8 1 placed on the upper side of the laser incident light and a substrate 82 placed on the opposite side, and having a gap 83. situation. In this way, the method of the present invention can be applied even to a glass composed of a plurality of layers. As shown in Fig. 4, in the case of two substrates, the lower substrate 82 will be processed in a direction longer than the laser transmission direction of the «20-200848190 line. This is because it increases with the transmission distance in the object to be processed. In addition, when the concentrating channel is self-concentrating, a laser of 10 to 200 // must be propagated in the object to be processed. The longer this distance, the longer the volume will form. If this feature is utilized, the substrate is made of a different kind of substrate which is the same kind or transparent to the laser light, thereby effectively enhancing the self-bundling effect, enabling distance and deeper processing. In particular, the cavity can be formed as a reverse surface by forming a concentrating channel on the opposite side. In other substrates of non-processed objects, there are sometimes holes, and sometimes voids are formed. This method can be applied to the glass substrate of the glass display panel in which the liquid crystal display panel is cut. The structure of the glass substrate on the light side sandwiching the gap and the lower substrate on the opposite side are on the upper glass substrate, and the light is irradiated from the upper side. The waist of the pulse beam exits the surface of the substrate or the interior of the substrate forms a void in the upper glass substrate. The cut surface (cut line) is formed by the laser light phase on the upper glass substrate. The ultrashort pulse laser is also injected from the upper glass substrate from the lower glass substrate to form a cut surface. The laser beam energy is irradiated to the upper glass substrate without causing damage to the upper glass substrate by laser irradiation at a suitable position on the surface or inside of the substrate. A cut surface (cut line) is formed by scanning an ultrashort pulse laser substrate. The clustering action will depend on the formation of a hollow substrate which is formed by the material of the front side of the same energy source, which is formed by the material of the front side of the same energy source. The liquid crystal is placed in a laser incident. The wave is fired so that when it is in position, it moves to the ground, and the upper side of the plate shines toward the waist. Ultra-short, can be in the lower part, in the lower glass -21 - 200848190 The fifth (a) diagram shows the liquid crystal display panel sectional view. The liquid crystal display 90 is composed of a laminated structure composed of two sheets of a glass substrate. A part 95 such as a transparent electrode, a color filter, or a thin crystal is formed on the inner surface of the upper substrate 91, and a part 96 such as a pole is formed on the inner surface of the lower glass substrate 92. Further, the liquid crystal liquid crystal is sealed between the two glass substrates and sealed in the gas sealing material 94. In the cutting step, the upper glass substrate and the second glass substrate are cut along the same cutting line, or the cutting step is performed with another cutting line that is slightly offset, and the cutting step is performed along the same cutting line. In the case of the break, the two or more substrates may be stacked and the processing conditions of all the substrates may be employed as described above. Figure 5 (a) further shows the step of breaking with other cut lines that deviate. In this step, the cutting 97 of the upper glass substrate and the cutting 98 of the glass substrate are performed. A cavity 6 is formed in the vicinity of the reverse side of the upper glass substrate 9A by irradiating the concentrated beam 5' from the front surface of the upper glass substrate 9 1 so that the laser beam waist comes into the inside of the substrate. A cut surface is formed on the upper glass substrate 91 by the bundled laser beam 5. Since the laser beam that is not consumed in the processing of the upper glass base plate 9 passes through the upper glass substrate 9 丨 and is irradiated to the part 96 such as the electrode on the lower glass substrate 92, the component 96 such as the electrode is caused. Damage may adversely affect the operation of the liquid crystal display device. In order to prevent the adverse effect of the seeding, as shown in Fig. 5(b), the coating layer 99 for pre-protection is applied, adhered or adhered to the position where the electrode or the like is irradiated with the laser beam. The protective coating layer 99 is used to form a plate for the laser beam of the clustered laser beam panel. When scanning the lower beam position in the picture of Fig. 4, it will be opaque in terms of the wavelength of -22-200848190 which forms the last beam. Here, the term "opaque" includes not only the fact that laser light is not transmitted at all, but also a small amount of light that can be transmitted without causing damage to the component 96 such as an electrode under the protective coating layer 99. The processing of the lower glass substrate 92 is performed separately from the processing of the upper glass substrate 91. Similarly, the concentrated laser beam 5 is irradiated from the front surface of the upper glass substrate 91, but the laser beam waist is irradiated to an appropriate position inside the lower glass substrate 92. The clustered laser beam 5 passes through the upper glass substrate 911 to form a cavity 91 in the vicinity of the reverse side of the lower glass substrate 92. The bundled laser beam 5 is scanned to form a cut surface on the lower glass substrate 92. After the glass substrate is subjected to stress and the glass substrate is cut, the liquid crystal display panel is assembled to other parts to manufacture a liquid crystal display device. Therefore, the method can be used to manufacture liquid crystal display panels and liquid crystal display devices. Another embodiment is shown when it is a plurality of substrates. In the present embodiment, a method of dividing a structure composed of two substrates is shown. Fig. 6 is a schematic cross-sectional view for explaining this embodiment. The structure 70 has a structure in which the upper glass substrate 9 1 and the lower glass substrate 92 are arranged in parallel. In the case of being used as a liquid crystal display panel, the structure 70 is partially interposed between two glass substrates. A spacer is required in order to provide a gap between two glass substrates. For example, in a liquid crystal display panel, a plurality of spherical sandstones or objects such as polystyrene and a cylindrical photoresist are disposed. In the present embodiment, the hermetic sealing material 94 is inserted between the two glass substrates, and the original purpose >23-200848190 constitutes a closed space in the glass substrate and the hermetic sealing material 94, but Also acts as a spacer without additionally inserting an object. In the case where the hermetic sealing material 94 is not inserted, a spacer is additionally inserted. On the upper surface of the lower glass substrate 92, the metal thin film wiring 89 is provided in a certain range. In the case of the gas-shielding material, the electronic component (not shown) is disposed on the glass substrate 92 under the closed space, and the metal film wiring 8 is preferably electrically connected to the electronic component. It is configured to span the hermetic seal material 94. If the structure is a liquid crystal display panel, a display device element is formed in the enclosed space. Here, the structure 70 is separated in order to be able to approach the metal film wiring 8 9 ' on the lower glass substrate 9 2 from the outside. First, the ultrashort pulse laser beam 2 is condensed from the upper surface side of the upper glass substrate 9 1 by the condensing lens 3, and comes to the upper surface of the lower glass plate 9 2 with the laser beam waist (laser light incidence The side surface) or the appropriate position inside (in the figure, the laser beam waist is located above, but not limited thereto, the following is also the case) to illuminate. However, in the lower glass plate, there is no metal film wiring 89. The laser beam 2 passes through the upper glass substrate 911 to form a cavity 64 in the lower glass substrate 92 which is caused by self-concentration. By moving the laser beam 2 relatively, a cavity is formed continuously or discretely, and a first cutting line 8 8 is formed on the lower glass substrate 9 2 . Next, the condensing lens 3 is moved upward, and the laser beam is irradiated to the upper surface of the upper glass plate 91 (the surface on the incident side of the laser light) or at an appropriate position inside. A void 63 caused by self-bundling is formed in the upper glass plate 91. By moving the laser beam 2 relatively, a space is continuously formed or continuously formed in a manner of -24 - 200848190, and a second cutting line 87 is formed on the upper glass substrate 9 1 . The second cutting line 87 is formed directly above the second cutting line 88. Next, before the first and second cutting lines 88 and 87 are formed, the third cutting line 86 is formed on the upper glass plate 9 1 in the same manner as the second cutting line 87. A void 62 is formed during this process. The third cutting line 86 is preferably a gas seal material or a spacer 94 disposed between the upper and lower glass substrates 9 1 and 92, and is generally formed to span the metal above the lower glass substrate 92. Film wiring 89. Further, the third cutting line 86 is formed to be parallel to the second cutting line 87 by a distance of 7 7 (Δ Y). In the case of having a hermetic sealing material, in the case where an electronic component is disposed inside the enclosed space formed by the hermetic sealing material and the two substrates, the third cutting line is preferably disposed outside the closed space to approach the hermetic sealing material 94. s position. At this time, the laser beam 2 that is not consumed when the third cutting line 86 of the upper glass substrate 91 is formed passes through the upper glass substrate 911 and is irradiated to the metal thin film wiring 8 9, so that it may be damaged. . However, the intensity of the laser beam 2 transmitted through the upper glass substrate 9 1 is generally not strong enough to cause damage thereto. Further, in order to prevent damage, the protective coating layer may be formed by applying, adhering or adhering to the position where the metal film wiring 89 is irradiated with the laser beam. The protective coating layer is removed as described later, after being cut along the third cutting line and being accessible from the outside. In addition, the protective coating layer is opaque to the wavelength of the laser beam, and the so-called opacity is not only completely refracted by the laser light, but also includes the purpose of not causing damage to the part. A trace of light. -25- 200848190 As in the case of forming the cutting line from the first to third, the bending force is applied to the structure 7 沿着 along the first cutting line 8 8 and the second cutting line 8 7 directly above it. The portions in which the first and second cutting lines are respectively provided in the lower portion and the upper glass substrate are broken, whereby the structure 70 is divided along the first and second cutting lines. Next, when a bending stress is applied to the upper glass substrate 9 1 along the third cutting line, the distance ΔY portion of the second and third cutting lines in the upper glass substrate 9 1 is separated. The structure 70 is cut by the above sequence. In Fig. 7, a two-layer structure cut in this manner is shown. The lower glass substrate 92 has only a ΔY corresponding to the second and third dicing line intervals 1 1 and a stepped structure having no upper glass substrate 191 at the upper portion. It becomes possible to approach the enlarged portion of the lower glass substrate 92 from the outside. Therefore, electronic components such as control circuits and metal thin film wiring can be newly formed. Further, when the metal film wiring which is led out from the inside of the hermetic sealing portion to the outside is provided on the lower glass substrate, the wiring which is led to the outside can be connected. In Fig. 7, each of the cross sections 66 and 65 of the lower glass substrate 921 and the upper glass substrate 9 1 has a cross section in which the first dicing line 8 8 and the third dicing line 86 are divided as starting points. In the same manner as the first and second cutting lines 8 8 and 87, the ultrashort laser pulse is collected from the upper portion, and the cutting lines are formed on the lower and upper glass substrates, respectively, and then the sides of the glass plate are divided and formed. 68, 67. According to the present embodiment, since the laser beam is irradiated only from the one side of the glass structure, the processing can be simplified. In addition, since the lower substrate portion having no upper substrate can be formed on the upper portion, it can be externally accessed, and electronic components such as control circuits or metal thin film wiring can be provided from the upper substrate or on the substrate. Therefore, it is possible to reduce the thickness of the display panel. Further, it can be connected to another metal thin film wiring portion which is led out from the inside of the hermetic seal to the outside. Fig. 8 is a view showing an example in which the present embodiment is applied to the production of a liquid crystal panel. This embodiment is carried out in a step of manufacturing a liquid crystal panel from a large-sized structure 70 having a plurality of upper and lower large glass substrates 9 1 and 92 in which a plurality of liquid crystal panels are formed, and dividing into individual panels 80. In the space surrounded by the glass substrates 91 and 92 and the hermetic sealing material 94 interposed therebetween, a color filter, a liquid crystal 93, a driving transistor, a wiring, a spacer, and the like necessary for the liquid crystal display panel are built in (other than the liquid crystal) Not shown). (a) is a top view and a cross-sectional view, and (b) is an enlarged cross-sectional view taken along the Y direction. The Z direction is a direction perpendicular to the paper surface. The cutting lines 7 4 -1 to 7 4 - m along the X direction are formed as follows. The lower cut glass 88 is formed on the lower glass substrate 92, and the portion of the lower glass plate where the metal thin film wiring 8 is absent is performed. Further, in the upper glass substrate 91, a second cutting line 87 is formed on the first cutting line 88. Further, in the upper glass substrate, it is preferable to provide the third cutting line at a position close to the gas sealing material 94. The third cutting line 86 is parallel to the second cutting line 87 by a distance 77 (ΔY). The third cutting line 86 is usually formed so as to straddle the metal thin film wiring 89. The cutting lines 73-1 to 73-n along the Y direction may be provided with one cutting line one by one at intervals of the panel width 76. It can be provided in the same manner as the method of forming the first and second cutting lines. • 27- 200848190 After the cutting line is formed, it can be divided along the cutting line formed by the glass substrate in the upper and lower portions, and is divided in the X and γ directions in this way. Therefore, it can be manufactured from the large 2-layer structure 70. A plurality of liquid crystal display panels 80. In this case, particularly on at least one side surface of the liquid crystal display panel 80, on the lower glass substrate 92, the metal thin film wiring 89 is pulled out from the inside of the hermetic sealing material 94 toward the outside, and can be easily accessed from the outside. Therefore, various configurations that can be electrically connected can be realized. In the case where the plurality of large-sized two-layer structures are individually divided into a plurality of display panels, the processing of the present embodiment can be performed by irradiating the laser beam from only one side and processing the two glass substrates to form a cutting line. Need to reverse the handling of large glass. Further, the metal film or the like of the electric wiring or the like from the internal structure of the display panel to the outside is not damaged by the laser beam, and can be easily accessed from the outside on one of the substrates, and is widened by the width of ΔY. The two glass plates form a step structure. The end of the upper glass substrate is removed as a portion between the second and third cutting lines in the vicinity of the cutting line on the surface of the lower glass substrate and facing the metal film or electronic component provided on the surface of the upper glass plate. It is easy to get close to the outside. Further, the metal thin film wiring which is led out from the inside of the display panel across the sealing portion on the lower glass substrate is feasible. Therefore, it becomes possible to perform wiring from the outside of the sealing portion. This method is not only a liquid crystal display panel but also suitable for cutting off other flat panel display panels such as a credit display panel. In addition, the method can be applied to the process of these flat panel display panels. Although the substrate constituting the structure is glass, the material -28-200848190 which is the object of the invention is not limited thereto. Further, although the substrate has two layers, it is apparent that it can be applied to a substrate having three or more layers. Fig. 9 is a view showing an embodiment of a method of processing a bevel (inclined surface). Using the rotating mirror 51, the ultrashort pulsed laser beam 2 from the ultrashort pulse laser generating device 1 is deflected and rotated 52 at a certain angle 0 about the axis of rotation 55. The light paths of the rotating laser beams 53 and 54 coincide with the optical axis and the condensing lens 3 that rotates with the rotating mirror 5 1 is used, and the focal point of the collecting lens 3 traces a circular trajectory. The substrate-shaped workpiece 4 is placed in advance on a workpiece mounting means (not shown) such as a pedestal. The circular trajectory and the mounting surface of the processed object mounting means are parallel, and the substrate-shaped workpiece 4 is placed on the object to be processed 4 when the substrate-shaped workpiece 4 is disposed parallel to the rotation axis 5 5 with respect to the normal line on the front surface thereof. The position of the laser light irradiation is scanned in rotation, and the circular track is irradiated. In this case, the object to be processed 4 is inclined by an angle of 0 from the rotating shaft 5 5 . First, the beam waist is focused from the opposite side of the workpiece 4 toward the inside, and is separated by a cavity forming distance 57 (about 135 #m), and scanned in a circle, thereby shifting from the normal. A hole array on the thin line is formed in a circular shape in the direction of the angle 0. In addition, the concentrating lens 3 is moved in the direction of the rotating mirror 51 along the optical axis direction, thereby sequentially moving the cavity to form a distance of about 5 8 and 5 9 , and each time the movement is formed, a cavity column is formed and the scanning is repeated to form a hole. From the front side of the object 4 to the circular hollow wall surface on the reverse side. Thereafter, it is separated by bending, and the periphery is processed by the inclined surface, and cut into a circular shape. In this manner, the present invention is formed not only in the vicinity of the surface of the object to be processed but also in the interior, and the formation of the cavity is repeated, and the processing from the partial cutting to the complete cutting can be performed. -29- 200848190 In the above laser processing, the pulse wave energy is preferably 1 mJ or less, and further preferably 1 0 //; [below. In the case of 1 0 //: [the following, a severed and smooth cut surface can be obtained, and cracks rarely occur and the breaking strength is high. When the texture or the like is present, the strength of the object to be processed such as glass is weakened, so that there is a poor condition. In the case where the pulse wave energy is large, when machining is to be performed near the front side, free electrons are generated due to the vicinity of the front end of the pulse wave; ^, the center portion to the rear end portion of the pulse wave are reflected or scattered, and absorbed. Therefore, it is difficult to form a hollow inside the glass in the temple. In the case where the pulse wave energy is small, since the density of the free electron plasma generated in the vicinity of the front surface becomes low, the transmission pulse wave is not greatly hindered, so that a void passage can be easily formed inside the glass. Further, the laser of the ultrashort pulse is a laser having a pulse width of 1 〇〇ps or more, and preferably has a pulse width of 5 00 fs to 10 ps, and further preferably 2 ps or so. This is because the stress required to cut the glass substrate is lowered after the fracture is continuously formed, and the quality of the cut surface is good. Further, when a glass substrate is used as the object to be processed, it is preferable that the pulse wave width is 1 50 femtoseconds and the output energy is 1 #J or more. As shown above, the present invention provides a novel processing method capable of using a beam spot having a small depth of focus of a concentrated beam of ultrashort pulse waves, using a self-bundling function formed inside the object to be processed. The increase in the depth of the actual focus of the use of the processing. This method is not found in the conventional processing method and is a precision machining method that is first realized by the interaction of the laser beam and the workpiece. [Example 1] -30- 200848190 The laser medium is a crystal of titanium sapphire (central wavelength 78 〇 nm), a pulse width of 150 deg. femtosecond, and an output energy of 1 μ; [above. In addition, the object to be processed is Corning Eagle 2000, which belongs to a glass substrate, and has a thickness of 700/m. In the case where there is no description different from each of the embodiments, these are common to all of the embodiments. In the first embodiment, when the condensing position when the object is irradiated with laser light is moved from the front side to the inside, the change in the object to be processed is observed, and the principle of the processing method is confirmed. Experimental example. Fig. 10 and Fig. 11 are micrographs showing a cross-sectional view of the change occurring in the object to be processed. Fig. 10 shows the front surface 45 of the substrate as the object to be processed, and Fig. 1 shows the vicinity of the reverse surface 44. For the configuration of Fig. 1, the incident beam diameter using the lens is 6 mm, and the focal length f of the collecting lens 3 is about 3. 1 mm aspherical lens with aberration correction. When the transverse mode of the laser beam is used as a Gaussian beam, the beam diameter of the condensed spot is calculated to be about 1 μm, and the depth of focus including the range of 90% of the energy of the beam waist is 1 //m below. As such, in the case where the ultrashort pulse laser beam having the small depth of focus 照射 is irradiated onto the object 4 to be processed, the beam is bundled and irradiated in such a manner that the front surface 45 is placed at the position of the beam waist. In this case, in the first drawing, the shallow portion 2 1 shown by the depth 23 is internally removed from the front surface 45, and when the beam waist is moved inside, the amount of surface removal is reduced, and When the position of the beam waist is moved inside, the range 24, 25, etc., in which the optical distortion occurs inside the workpiece 4 occurs in the peripheral portion depending on the position in the depth direction in which the beam waist is placed. The beam waist is placed inside, reducing the surface removal, and instead the internal optical distortion occurs, and the range 24 and the first image appear to further move the beam waist inside the substrate. Observe the photo. The portions 3 1 and 3 2 where the optical change occurred in the portion of the projection were observed under the condition that there was no change on the front surface 45. Further, a portion 33 which causes an optical change in the number of 1 〇〇 a m from the inside to the reverse side as viewed from the opposite side 44 of the object to be processed is observed. Further, when the beam waist is about 1 3 5 // m from the back surface 44, the cavity 34 is formed in a thin line shape from the inside to the reverse side. Further, when the waist portion of the laser beam is focused on the reverse side 44, the vicinity of the reverse side is removed. From the result of the processing, even if the focal depth of the beam is about 1 #m as described above, a distance (135 // m) is formed in the direction of the ejection direction to form a thin line as the diameter of the waist. The cavity 34, which is not found to be self-bundling, is processed in a range of only the focal depth of the beam (about 1 // m), and the method can cover a range of about 2 digits long and perform thin hole processing. [Embodiment 2] This embodiment is a case where a cavity passage is formed in the vicinity of the reverse side and the laser is scanned to form a cut surface of the cavity passage. In the case where the thin-line voids caused by the self-bundling action are formed, as shown in the graph in Fig. 2, the funnel-shaped portion 43 may be formed on the reverse side. The funnel-shaped portions 4 3 are overlapped with each other by abutting portions, and the voids are formed separately at the same place as the channels 8, and along the processed back surface 44, relatively scanned with ultrashort laser pulses, along Sweeping to form a predetermined machining depth of a plurality of 25° intercepting waists juxtaposed on the envelope 46 close to the line, only the beam of the laser beam is subjected to the light, and the thin part of the thin line is drawn to the thin line - 32- 200848190 Cavity. Fig. 1 is a micrograph showing the cut surface of the fine-line void formed in this manner. In this example, after the scanning of the laser pulse is performed at a scanning speed of 3 mm/s, the scanning line is bent and divided to observe the cross section. In the figure, it is shown that in the processing of the thickness 41 of the object to be processed, the envelope 46 from the reverse surface 44 to the depth 4 2 is covered, and a plurality of thin-line hollow passages are formed, which are divided by the starting point. The processed section of the object to be processed. Fig. 1 is a scanning microscope photograph taken from the cross section of the cavity 61, and Fig. 14 is a scanning microscope photograph in the vicinity of the reverse side. The ridge structure 7 1 in which the surface of the cavity 61 is formed to be higher than the surrounding and has a weak mechanical strength is shown. [Embodiment 3] In the configuration shown in Fig. 3, the height of the beam waist is changed, and scanning is performed plural times, and processing is performed in the vicinity of the reverse side. Fig. 15 shows the cross section of the number of scans 4 times, the pulse wave energy of 10 μm, and the pulse width of 2 ps. The pulse wave energy is reduced to optimize the pulse width, thereby forming a high-quality processing region 36 in the vicinity of the reverse side. [Embodiment 4] In this embodiment, also as shown in Fig. 3, the height of the beam waist is changed, and scanning is performed for a plurality of times. In this embodiment, the beam waist is formed in such a manner that the processing region is set in the vicinity of the front surface of the glass substrate. Fig. 16 is a cross section showing the case where the number of scans is 10 times, the pulse energy is 1 // J, and the pulse width is 2 ps. By optimizing the pulse wave energy and the pulse width, a good processed region 36 covering the front side can be obtained. [Embodiment 5] -33- 200848190 This embodiment is a case where the object to be processed is formed into a laminate of two sheets of a glass substrate. As a configuration shown in Fig. 4, the condensing position of the laser is changed from the front surface of the glass upper substrate 87 to the reverse surface to be processed. Fig. 17 shows a micrograph of the processed glass substrate. Not only the upper glass 181 but also the lower glass 82 placed on the back side thereof is also processed. The upper glass 8 1 relates to a maximum of 1 50 // m and the lower glass 82 is processed up to a maximum of 25 0 // m. As described above, the substrate placed in the lower portion is processed for a long time depending on the direction in which the laser is transmitted. Hereinabove, the embodiments of the present invention have been described. It will be apparent that modifications can be made to these without departing from the inventive concepts described in the claims. [Industrial Applicability] As an example of the use of the present invention, in the processing of an object to be processed for a display device such as a semiconductor device or a liquid crystal, substrate separation from a surface of a germanium wafer, a thin film transistor, and a display device is performed. The processing of the high-withstand-voltage power semiconductor substrate is effective in the processing of removing the inside of the layer of the multilayered electronic component and having a small heat influence. In the production of a high-integration circuit, the product yield is improved due to the miniaturization of the processing width and the reduction of the processed material, so that the manufacturing cost of the electronic component can be reduced. Further, it is also effective in hole processing of a substrate of a semiconductor device such as quartz or sapphire. It is also effective in the processing of a filter portion in which a plurality of fine holes are provided. Further, the present invention can be utilized in the manufacture of an electronic device using a multi-layer glass structure such as a liquid crystal display panel, a plasma display panel or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a configuration of a processing method of a workpiece to be processed by the self-assembly action of the -34 - 200848190 caused by the Kerr effect associated with the present invention. The second (a) and (b) drawings are diagrams for scanning the laser and performing substrate processing. The third (a) to (c) diagrams are diagrams showing a method of changing the condensing position of the laser light condensing point and scanning the refracting position after scanning the object to be processed. Fig. 4 is a view showing a structure in which a multilayer structure composed of two substrates is processed. The fifth (a) and (b) drawings are explanatory views when the liquid crystal panel structure and the two glass substrates are cut at other positions. Fig. 6 is a schematic cross-sectional view for explaining a division method of a structure composed of two substrates. Fig. 7 is a view showing an example of a shape of a glass structure composed of two substrates. Fig. 8(a) and (b) are explanatory views when the large-sized glass structure is divided into individual liquid crystal display panels. Fig. 9 is a view showing an embodiment in which the processing method of the present invention is applied to the inclined surface processing. Fig. 10 is a view showing the result of the first embodiment, and is a micrograph of the vicinity of the front side of the object to be processed. Fig. 1 is a view showing the result of the first embodiment, and is a micrograph of the vicinity of the reverse side of the object to be processed. Fig. 1 is a view showing the result of the second embodiment, and is an explanatory view of a cut surface of the hollow passage and a micrograph thereof. Fig. 3 is a diagram showing the result of the second embodiment of the Tpc, which is a scanning type microscope photograph of a cross section of the cavity 61. -35- 200848190 Figure 14 is a special enlargement of the scanning microscope photo near the reverse side of the substrate in Figure 13. Fig. 15 is a view showing the result of the third embodiment, showing a microscopic photograph of the cut surface. Fig. 16 is a view showing the results of the fourth embodiment, which is a micrograph of the cut surface. Fig. 17 is a view showing the results of the fifth embodiment, showing a micrograph after processing of two substrates. [Main component symbol description] 1 Ultrashort pulse laser generating device 2 Laser beam 3 Condenser lens 4 Object to be processed 5 Cluster laser beam 6 Beam waist 7 Thickness 8 Channel 10 Beam 11 Divergent shot Beam 13, 14 S giant 15 Ultrashort pulse 16 Direction of travel 21 Shallow part 23 Depth -36- 200848190 24, 25 Range 3 1~ 33 Location that causes optical changes 34 Thin line cavity 35 Force line 36 Machining area 37 Depth of focus 41 Thickness 42 Depth 43 Funnel-shaped part 44 Reverse side 45 Front 46 Envelope 47 Scanning direction 48 Scanning line 49 Bending stress 50 Laser beam 51 Rotating mirror 52 Rotation 53, 54 Laser beam 55 Rotary shaft 56 Reverse side 57 ~ 59 Distance 6 1~ 64 Hole 65, 66 Section -37- 200848190 67, 68 Side 70 Structure 7 1 Uplift structure 77 Distance 8 1 Upper substrate 82 Lower substrate 83 Clearance 86 3rd cutting line 87 2nd cutting line 88 1 Cutting line 89 Metal film wiring 90 LCD panel 91 Upper glass base plate 92 Lower glass base plate 93 Liquid crystal 94 Airtight sealing material 95, 96 Parts 97, 98 Cut 99 Protection Coating Layer -38